Ultralow-k nanoporous organosilicate dielectric films imprinted with dendritic spheres.

PubMed

Lee, Byeongdu; Park, Young-Hee; Hwang, Yong-Taek; Oh, Weontae; Yoon, Jinhwan; Ree, Moonhor

2005-02-01

Integrated circuits that have improved functionality and speed in a smaller package and that consume less power are desired by the microelectronics industry as well as by end users, to increase device performance and reduce costs. The fabrication of high-performance integrated circuits requires the availability of materials with low or ultralow dielectric constant (low-k: k

Integration of perovskite oxide dielectrics into complementary metal-oxide-semiconductor capacitor structures using amorphous TaSiN as oxygen diffusion barrier

NASA Astrophysics Data System (ADS)

Mešić, Biljana; Schroeder, Herbert

2011-09-01

The high permittivity perovskite oxides have been intensively investigated for their possible application as dielectric materials for stacked capacitors in dynamic random access memory circuits. For the integration of such oxide materials into the CMOS world, a conductive diffusion barrier is indispensable. An optimized stack p++-Si/Pt/Ta21Si57N21/Ir was developed and used as the bottom electrode for the oxide dielectric. The amorphous TaSiN film as oxygen diffusion barrier showed excellent conductive properties and a good thermal stability up to 700 °C in oxygen ambient. The additional protective iridium layer improved the surface roughness after annealing. A 100-nm-thick (Ba,Sr)TiO3 film was deposited using pulsed laser deposition at 550 °C, showing very promising properties for application; the maximum relative dielectric constant at zero field is κ ≈ 470, and the leakage current density is below 10-6 A/cm2 for fields lower then ± 200 kV/cm, corresponding to an applied voltage of ± 2 V.

Droplet Velocity Measurement Based on Dielectric Layer Thickness Variation Using Digital Microfluidic Devices.

PubMed

Zulkepli, Siti Noor Idora Syafinaz; Hamid, Nor Hisham; Shukla, Vineeta

2018-05-08

In recent years, the number of interdisciplinary research works related to the development of miniaturized systems with integrated chemical and biological analyses is increasing. Digital microfluidic biochips (DMFBs) are one kind of miniaturized systems designed for conducting inexpensive, fast, convenient and reliable biochemical assay procedures focusing on basic scientific research and medical diagnostics. The role of a dielectric layer in the digital microfluidic biochips is prominent as it helps in actuating microliter droplets based on the electrowetting-on-dielectric (EWOD) technique. The advantages of using three different material layers of dielectric such as parafilm, polytetrafluoroethylene (PTFE) and ethylene tetrafluoroethylene (ETFE) were reported in the current work. A simple fabrication process of a digital microfluidic device was performed and good results were obtained. The threshold of the actuation voltage was determined for all dielectric materials of varying thicknesses. Additionally, the OpenDrop device was tested by utilizing a single-plate system to transport microliter droplets for a bioassay operation. With the newly proposed fabrication methods, these dielectric materials showed changes in contact angle and droplet velocity when the actuation voltage was applied. The threshold actuation voltage for the dielectric layers of 10⁻13 μm was 190 V for the open plate DMFBs.

Top-gate dielectric induced doping and scattering of charge carriers in epitaxial graphene

NASA Astrophysics Data System (ADS)

Puls, Conor P.; Staley, Neal E.; Moon, Jeong-Sun; Robinson, Joshua A.; Campbell, Paul M.; Tedesco, Joseph L.; Myers-Ward, Rachael L.; Eddy, Charles R.; Gaskill, D. Kurt; Liu, Ying

2011-07-01

We show that an e-gun deposited dielectric impose severe limits on epitaxial graphene-based device performance based on Raman spectroscopy and low-temperature transport measurements. Specifically, we show from studies of epitaxial graphene Hall bars covered by SiO2 that the measured carrier density is strongly inhomogenous and predominantly induced by charged impurities at the grapheme/dielectric interface that limit mobility via Coulomb interactions. Our work emphasizes that material integration of epitaxial graphene and a gate dielectric is the next major road block towards the realization of graphene-based electronics.

Dielectric elastomer actuators used for pneumatic valve technology

NASA Astrophysics Data System (ADS)

Giousouf, Metin; Kovacs, Gabor

2013-10-01

Dielectric elastomer actuators have been investigated for applications in the field of pneumatic automation technology. We have developed different valve designs with stacked dielectric elastomer actuators and with integrated high voltage converters. The actuators were made using VHB-4910 material and a stacker machine for automated fabrication of the cylindrical actuators. Typical characteristics of pneumatic valves such as flow rate, power consumption and dynamic behaviour are presented. For valve construction the force and stroke parameters of the dielectric elastomer actuator have been measured. Further, benefits for valve applications using dielectric elastomers are shown as well as their potential operational area. Finally, challenges are discussed that are relevant for the use of elastomer actuators in valves for industrial applications.

Trends in Dielectric Etch for Microelectronics Processing

NASA Astrophysics Data System (ADS)

Hudson, Eric A.

2003-10-01

Dielectric etch technology faces many challenges to meet the requirements for leading-edge microelectronics processing. The move to sub 100-nm device design rules increases the aspect ratios of certain features, imposes tighter restrictions on etched features' critical dimensions, and increases the density of closely packed arrays of features. Changes in photolithography are driving transitions to new photoresist materials and novel multilayer resist methods. The increasing use of copper metallization and low-k interlayer dielectric materials has introduced dual-damascene integration methods, with specialized dielectric etch applications. A common need is the selective removal of multiple layers which have very different compositions, while maintaining close control of the etched features' profiles. To increase productivity, there is a growing trend toward in-situ processing, which allows several films to be successively etched during a single pass through the process module. Dielectric etch systems mainly utilize capacitively coupled etch reactors, operating with medium-density plasmas and low gas residence time. Commercial technology development increasingly relies upon plasma diagnostics and modeling to reduce development cycle time and maximize performance.

Localized temperature stability in Low Temperature Cofired Ceramics (LTCC).

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dai, Steven Xunhu; Hsieh, Lung-Hwa.

2012-04-01

The base dielectrics of commercial low temperature cofired ceramics (LTCC) systems have a temperature coefficient of resonant frequency ({tau}{sub f}) in the range -50 {approx} -80 ppm/C. In this research we explored a method to realize zero or near zero {tau}{sub f} resonators by incorporating {tau}{sub f} compensating materials locally into a multilayer LTCC structure. To select composition for {tau}{sub f} adjustment, {tau}{sub f} compensating materials with different amount of titanates were formulated, synthesized, and characterized. Chemical interactions and physical compatibility between the {tau}{sub f} modifiers and the host LTCC dielectrics were investigated. Studies on stripline (SL) resonator panels withmore » multiple compensating dielectrics revealed that: 1) compositions using SrTiO{sub 3} provide the largest {tau}{sub f} adjustment among titanates, 2) the {tau}{sub f} compensation is proportional to the amount of SrTiO{sub 3} in compensating materials, as well as the thickness of the compensating layer, and 3) the most effective {tau}{sub f} compensation is achieved when the compensating dielectric is integrated next to the SL. Using the effective dielectric constant of a heterogeneous layered dielectric structure, results from Method of Momentum (MoM) electromagnetic simulations are consistent with the experimental observations.« less

Multifunctional Material Systems for Reconfigurable Antennas in Superconfigurable Structures

DTIC Science & Technology

2016-01-05

reconFig.d states of the antenna. A polarization-reconfigurable substrate-integrated waveguide ( SIW ) cavity-resonator slot antenna has also been...the automation and control. Fig. 36 Polarization-reconfigurable substrate-integrated waveguide ( SIW ) cavity-resonator slot antenna with a...22, 3833–3839, 2012. [3] Analysis of a Variable SIW Resonator Enabled by Dielectric Material Perturbations and Applications, Barrera, J.D. ; Huff

Nanocomposite thin films for optical temperature sensing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ohodnicki, Jr., Paul R.; Brown, Thomas D.; Buric, Michael P.

2017-02-14

The disclosure relates to an optical method for temperature sensing utilizing a temperature sensing material. In an embodiment the gas stream, liquid, or solid has a temperature greater than about 500.degree. C. The temperature sensing material is comprised of metallic nanoparticles dispersed in a dielectric matrix. The metallic nanoparticles have an electronic conductivity greater than approximately 10.sup.-1 S/cm at the temperature of the temperature sensing material. The dielectric matrix has an electronic conductivity at least two orders of magnitude less than the dispersed metallic nanoparticles at the temperature of the temperature sensing material. In some embodiments, the chemical composition ofmore » a gas stream or liquid is simultaneously monitored by optical signal shifts through multiple or broadband wavelength interrogation approaches. In some embodiments, the dielectric matrix provides additional functionality due to a temperature dependent band-edge, an optimized chemical sensing response, or an optimized refractive index of the temperature sensing material for integration with optical waveguides.« less

Time Dependent Dielectric Breakdown in Copper Low-k Interconnects: Mechanisms and Reliability Models

PubMed Central

Wong, Terence K.S.

2012-01-01

The time dependent dielectric breakdown phenomenon in copper low-k damascene interconnects for ultra large-scale integration is reviewed. The loss of insulation between neighboring interconnects represents an emerging back end-of-the-line reliability issue that is not fully understood. After describing the main dielectric leakage mechanisms in low-k materials (Poole-Frenkel and Schottky emission), the major dielectric reliability models that had appeared in the literature are discussed, namely: the Lloyd model, 1/E model, thermochemical E model, E1/2 models, E2 model and the Haase model. These models can be broadly categorized into those that consider only intrinsic breakdown (Lloyd, 1/E, E and Haase) and those that take into account copper migration in low-k materials (E1/2, E2). For each model, the physical assumptions and the proposed breakdown mechanism will be discussed, together with the quantitative relationship predicting the time to breakdown and supporting experimental data. Experimental attempts on validation of dielectric reliability models using data obtained from low field stressing are briefly discussed. The phenomenon of soft breakdown, which often precedes hard breakdown in porous ultra low-k materials, is highlighted for future research.

Soft Dielectric Elastomer Oscillators Driving Bioinspired Robots.

PubMed

Henke, E-F Markus; Schlatter, Samuel; Anderson, Iain A

2017-12-01

Entirely soft robots with animal-like behavior and integrated artificial nervous systems will open up totally new perspectives and applications. To produce them, we must integrate control and actuation in the same soft structure. Soft actuators (e.g., pneumatic and hydraulic) exist but electronics are hard and stiff and remotely located. We present novel soft, electronics-free dielectric elastomer oscillators, which are able to drive bioinspired robots. As a demonstrator, we present a robot that mimics the crawling motion of the caterpillar, with an integrated artificial nervous system, soft actuators and without any conventional stiff electronic parts. Supplied with an external DC voltage, the robot autonomously generates all signals that are necessary to drive its dielectric elastomer actuators, and it translates an in-plane electromechanical oscillation into a crawling locomotion movement. Therefore, all functional and supporting parts are made of polymer materials and carbon. Besides the basic design of this first electronic-free, biomimetic robot, we present prospects to control the general behavior of such robots. The absence of conventional stiff electronics and the exclusive use of polymeric materials will provide a large step toward real animal-like robots, compliant human machine interfaces, and a new class of distributed, neuron-like internal control for robotic systems.

Intelligent Luminescence for Communication Display and Identification

DTIC Science & Technology

2007-07-18

34Fabrication of two-dimensional photonic crystals using interference lithography and electrodeposition of CdSe," Appl. Phys. Letts. 79, 3392-3394 (2001). 7...studies were performed on holographically derived structures fonned in SUS by a four-laser beam interference pattern. As shown in Figure 7 a SUS polymer...dielectric material, as patterned by electron-beam lithography , consisting of a periodic dielectric modulation with integrated line, point and

Strongly nonlinear composite dielectrics: A perturbation method for finding the potential field and bulk effective properties

NASA Astrophysics Data System (ADS)

Blumenfeld, Raphael; Bergman, David J.

1991-10-01

A class of strongly nonlinear composite dielectrics is studied. We develop a general method to reduce the scalar-potential-field problem to the solution of a set of linear Poisson-type equations in rescaled coordinates. The method is applicable for a large variety of nonlinear materials. For a power-law relation between the displacement and the electric fields, it is used to solve explicitly for the value of the bulk effective dielectric constant ɛe to second order in the fluctuations of its local value. A simlar procedure for the vector potential, whose curl is the displacement field, yields a quantity analogous to the inverse dielectric constant in linear dielectrics. The bulk effective dielectric constant is given by a set of linear integral expressions in the rescaled coordinates and exact bounds for it are derived.

Multi-susceptibile Single-Phased Ceramics with Both Considerable Magnetic and Dielectric Properties by Selectively Doping

PubMed Central

Liu, Chuyang; Zhang, Yujing; Jia, Jingguo; Sui, Qiang; Ma, Ning; Du, Piyi

2015-01-01

Multiferroic ceramics with extraordinary susceptibilities coexisting are vitally important for the multi-functionality and integration of electronic devices. However, multiferroic composites, as the most potential candidates, will introduce inevitable interface deficiencies and thus dielectric loss from dissimilar phases. In this study, single-phased ferrite ceramics with considerable magnetic and dielectric performances appearing simultaneously were fabricated by doping target ions in higher valence than that of Fe3+, such as Ti4+, Nb5+ and Zr4+, into BaFe12O19. In terms of charge balance, Fe3+/Fe2+ pair dipoles are produced through the substitution of Fe3+ by high-valenced ions. The electron hopping between Fe3+ and Fe2+ ions results in colossal permittivity. Whilst the single-phased ceramics doped by target ions exhibit low dielectric loss naturally due to the diminishment of interfacial polarization and still maintain typical magnetic properties. This study provides a convenient method to attain practicable materials with both outstanding magnetic and dielectric properties, which may be of interest to integration and multi-functionality of electronic devices. PMID:25835175

Multi-susceptibile single-phased ceramics with both considerable magnetic and dielectric properties by selectively doping.

PubMed

Liu, Chuyang; Zhang, Yujing; Jia, Jingguo; Sui, Qiang; Ma, Ning; Du, Piyi

2015-04-02

Multiferroic ceramics with extraordinary susceptibilities coexisting are vitally important for the multi-functionality and integration of electronic devices. However, multiferroic composites, as the most potential candidates, will introduce inevitable interface deficiencies and thus dielectric loss from dissimilar phases. In this study, single-phased ferrite ceramics with considerable magnetic and dielectric performances appearing simultaneously were fabricated by doping target ions in higher valence than that of Fe(3+), such as Ti(4+), Nb(5+) and Zr(4+), into BaFe12O19. In terms of charge balance, Fe(3+)/Fe(2+) pair dipoles are produced through the substitution of Fe(3+) by high-valenced ions. The electron hopping between Fe(3+) and Fe(2+) ions results in colossal permittivity. Whilst the single-phased ceramics doped by target ions exhibit low dielectric loss naturally due to the diminishment of interfacial polarization and still maintain typical magnetic properties. This study provides a convenient method to attain practicable materials with both outstanding magnetic and dielectric properties, which may be of interest to integration and multi-functionality of electronic devices.

Multi-susceptibile Single-Phased Ceramics with Both Considerable Magnetic and Dielectric Properties by Selectively Doping

NASA Astrophysics Data System (ADS)

Liu, Chuyang; Zhang, Yujing; Jia, Jingguo; Sui, Qiang; Ma, Ning; Du, Piyi

2015-04-01

Multiferroic ceramics with extraordinary susceptibilities coexisting are vitally important for the multi-functionality and integration of electronic devices. However, multiferroic composites, as the most potential candidates, will introduce inevitable interface deficiencies and thus dielectric loss from dissimilar phases. In this study, single-phased ferrite ceramics with considerable magnetic and dielectric performances appearing simultaneously were fabricated by doping target ions in higher valence than that of Fe3+, such as Ti4+, Nb5+ and Zr4+, into BaFe12O19. In terms of charge balance, Fe3+/Fe2+ pair dipoles are produced through the substitution of Fe3+ by high-valenced ions. The electron hopping between Fe3+ and Fe2+ ions results in colossal permittivity. Whilst the single-phased ceramics doped by target ions exhibit low dielectric loss naturally due to the diminishment of interfacial polarization and still maintain typical magnetic properties. This study provides a convenient method to attain practicable materials with both outstanding magnetic and dielectric properties, which may be of interest to integration and multi-functionality of electronic devices.

Elastic properties of porous low-k dielectric nano-films

NASA Astrophysics Data System (ADS)

Zhou, W.; Bailey, S.; Sooryakumar, R.; King, S.; Xu, G.; Mays, E.; Ege, C.; Bielefeld, J.

2011-08-01

Low-k dielectrics have predominantly replaced silicon dioxide as the interlayer dielectric for interconnects in state of the art integrated circuits. In order to further reduce interconnect RC delays, additional reductions in k for these low-k materials are being pursued via the introduction of controlled levels of porosity. The main challenge for such dielectrics is the substantial reduction in elastic properties that accompanies the increased pore volume. We report on Brillouin light scattering measurements used to determine the elastic properties of these films at thicknesses well below 200 nm, which are pertinent to their introduction into present ultralarge scale integrated technology. The observation of longitudinal and transverse standing wave acoustic resonances and their transformation into traveling waves with finite in-plane wave vectors provides for a direct non-destructive measure of the principal elastic constants that characterize the elastic properties of these porous nano-scale films. The mode dispersion further confirms that for porosity levels of up to 25%, the reduction in the dielectric constant does not result in severe degradation in the Young's modulus and Poisson's ratio of the films.

Hybrid nanomembrane-based capacitors for the determination of the dielectric constant of semiconducting molecular ensembles.

PubMed

Petrini, Paula A; Silva, Ricardo M L; de Oliveira, Rafael F; Merces, Leandro; Bof Bufon, Carlos C

2018-06-29

Considerable advances in the field of molecular electronics have been achieved over the recent years. One persistent challenge, however, is the exploitation of the electronic properties of molecules fully integrated into devices. Typically, the molecular electronic properties are investigated using sophisticated techniques incompatible with a practical device technology, such as the scanning tunneling microscopy. The incorporation of molecular materials in devices is not a trivial task as the typical dimensions of electrical contacts are much larger than the molecular ones. To tackle this issue, we report on hybrid capacitors using mechanically-compliant nanomembranes to encapsulate ultrathin molecular ensembles for the investigation of molecular dielectric properties. As the prototype material, copper (II) phthalocyanine (CuPc) has been chosen as information on its dielectric constant (k CuPc ) at the molecular scale is missing. Here, hybrid nanomembrane-based capacitors containing metallic nanomembranes, insulating Al 2 O 3 layers, and the CuPc molecular ensembles have been fabricated and evaluated. The Al 2 O 3 is used to prevent short circuits through the capacitor plates as the molecular layer is considerably thin (<30 nm). From the electrical measurements of devices with molecular layers of different thicknesses, the CuPc dielectric constant has been reliably determined (k CuPc  = 4.5 ± 0.5). These values suggest a mild contribution of the molecular orientation on the CuPc dielectric properties. The reported nanomembrane-based capacitor is a viable strategy for the dielectric characterization of ultrathin molecular ensembles integrated into a practical, real device technology.

Hybrid nanomembrane-based capacitors for the determination of the dielectric constant of semiconducting molecular ensembles

NASA Astrophysics Data System (ADS)

Petrini, Paula A.; Silva, Ricardo M. L.; de Oliveira, Rafael F.; Merces, Leandro; Bof Bufon, Carlos C.

2018-06-01

Considerable advances in the field of molecular electronics have been achieved over the recent years. One persistent challenge, however, is the exploitation of the electronic properties of molecules fully integrated into devices. Typically, the molecular electronic properties are investigated using sophisticated techniques incompatible with a practical device technology, such as the scanning tunneling microscopy. The incorporation of molecular materials in devices is not a trivial task as the typical dimensions of electrical contacts are much larger than the molecular ones. To tackle this issue, we report on hybrid capacitors using mechanically-compliant nanomembranes to encapsulate ultrathin molecular ensembles for the investigation of molecular dielectric properties. As the prototype material, copper (II) phthalocyanine (CuPc) has been chosen as information on its dielectric constant (k CuPc) at the molecular scale is missing. Here, hybrid nanomembrane-based capacitors containing metallic nanomembranes, insulating Al2O3 layers, and the CuPc molecular ensembles have been fabricated and evaluated. The Al2O3 is used to prevent short circuits through the capacitor plates as the molecular layer is considerably thin (<30 nm). From the electrical measurements of devices with molecular layers of different thicknesses, the CuPc dielectric constant has been reliably determined (k CuPc = 4.5 ± 0.5). These values suggest a mild contribution of the molecular orientation on the CuPc dielectric properties. The reported nanomembrane-based capacitor is a viable strategy for the dielectric characterization of ultrathin molecular ensembles integrated into a practical, real device technology.

A Substrate Integrated Waveguide Sensor for Measurement of Dielectric Properties of Biomass Materials

USDA-ARS?s Scientific Manuscript database

Substrate integrated waveguide- based sensors balance the performance and well known design techniques of classical waveguides with the cheaper and more adaptable aspects of planar circuits. Propagation characteristics are similar to waveguides with the design retaining many positive aspects of wave...

Strong interfacial polarization in graphene/ZnO nanocomposite for high-performance miniscule permittivity materials

NASA Astrophysics Data System (ADS)

Shoeb, Mohd; Mobin, Mohammad; Naqvi, Alim H.

2018-05-01

In the 21st century evolution of microelectronics industries, consumptions of integrated circuits (IC's) increases, so the demand of miniscule permittivity (MP) material with minimum loss factor arises in the electronics industries. Graphene embedded ZnO Nanoparticle (Gr/ZnO NCs) is synthesized and studied their dielectric properties In the studied frequency range 75 kHz to 7 MHz. In the sample Gr/ZnO NCs dielectric permittivity decrease gradually from 7.2 to 6.7 as the frequency increases, whereas dielectric permittivity of ZnO NPs shows also diminishing behavior in the range 75 to 20 as the frequency increases. In the Gr/ZnO NCs, Maxwell-Wagner polarization model explains strong interfacial polarization to presence of functionalization group and lattice defects on graphene sheet.

Titanium dioxide thin films deposited by pulsed laser deposition and integration in radio frequency devices: Study of structure, optical and dielectric properties

NASA Astrophysics Data System (ADS)

Orlianges, Jean-Christophe; Crunteanu, Aurelian; Pothier, Arnaud; Merle-Mejean, Therese; Blondy, Pierre; Champeaux, Corinne

2012-12-01

Titanium dioxide presents a wide range of technological application possibilities due to its dielectric, electrochemical, photocatalytic and optical properties. The three TiO2 allotropic forms: anatase, rutile and brookite are also interesting, since they exhibit different properties, stabilities and growth modes. For instance, rutile has a high dielectric permittivity, of particular interest for the integration as dielectric in components such as microelectromechanical systems (MEMS) for radio frequency (RF) devices. In this study, titanium dioxide thin films are deposited by pulsed laser deposition. Characterizations by Raman spectroscopy and X-ray diffraction show the evolution of the structural properties. Thin films optical properties are investigated using spectroscopic ellipsometry and transmission measurements from UV to IR range. Co-planar waveguide (CPW) devices are fabricated based on these films. Their performances are measured in the RF domain and compared to simulation, leading to relative permittivity values in the range 30-120, showing the potentialities of the deposited material for capacitive switches applications.

Enhancement of specific absorption rate in lossy dielectric objects using a slab of left-handed material.

PubMed

Zhao, Lei; Cui, Tie Jun

2005-12-01

An enhancement of the specific absorption rate (SAR) inside a lossy dielectric object has been investigated theoretically based on a slab of left-handed medium (LHM). In order to make an accurate analysis of SAR distribution, a proper Green's function involved in the LHM slab is proposed, from which an integral equation for the electric field inside the dielectric object is derived. Such an integral equation has been solved accurately and efficiently using the conjugate gradient method and the fast Fourier transform. We have made a lot of numerical experiments on the SAR distributions inside the dielectric object excited by a line source with and without the LHM slab. Numerical experiments show that SAR can be enhanced tremendously when the LHM slab is involved due to the proper usage of strong surface waves, which will be helpful in the potential biomedical applications for hyperthermia. The physical insight for such a phenomenon has also been discussed.

High density circuit technology, part 2

NASA Technical Reports Server (NTRS)

Wade, T. E.

1982-01-01

A multilevel metal interconnection system for very large scale integration (VLSI) systems utilizing polyimides as the interlayer dielectric material is described. A complete characterization of polyimide materials is given as well as experimental methods accomplished using a double level metal test pattern. A low temperature, double exposure polyimide patterning procedure is also presented.

Superluminal antenna

DOE Office of Scientific and Technical Information (OSTI.GOV)

Singleton, John; Earley, Lawrence M.; Krawczyk, Frank L.

A superluminal antenna element integrates a balun element to better impedance match an input cable or waveguide to a dielectric radiator element, thus preventing stray reflections and consequent undesirable radiation. For example, a dielectric housing material can be used that has a cutout area. A cable can extend into the cutout area. A triangular conductor can function as an impedance transition. An additional cylindrical element functions as a sleeve balun to better impedance match the radiator element to the cable.

Superluminal antenna

DOEpatents

Singleton, John; Earley, Lawrence M.; Krawczyk, Frank L.; Potter, James M.; Romero, William P.; Wang, Zhi-Fu

2018-04-17

A superluminal antenna element integrates a balun element to better impedance match an input cable or waveguide to a dielectric radiator element, thus preventing stray reflections and consequent undesirable radiation. For example, a dielectric housing material can be used that has a cutout area. A cable can extend into the cutout area. A triangular conductor can function as an impedance transition. An additional cylindrical element functions as a sleeve balun to better impedance match the radiator element to the cable.

Integration of Photo-Patternable Low-κ Material into Advanced Cu Back-End-Of-The-Line

NASA Astrophysics Data System (ADS)

Lin, Qinghuang; Nelson, Alshakim; Chen, Shyng-Tsong; Brock, Philip; Cohen, Stephan A.; Davis, Blake; Kaplan, Richard; Kwong, Ranee; Liniger, Eric; Neumayer, Debra; Patel, Jyotica; Shobha, Hosadurga; Sooriyakumaran, Ratnam; Purushothaman, Sampath; Miller, Robert; Spooner, Terry; Wisnieff, Robert

2010-05-01

We report herein the demonstration of a simple, low-cost Cu back-end-of-the-line (BEOL) dual-damascene integration using a novel photo-patternable low-κ dielectric material concept that dramatically reduces Cu BEOL integration complexity. This κ=2.7 photo-patternable low-κ material is based on the SiCOH-based material platform and has sub-200 nm resolution capability with 248 nm optical lithography. Cu/photo-patternable low-κ dual-damascene integration at 45 nm node BEOL fatwire levels has been demonstrated with very high electrical yields using the current manufacturing infrastructure. The photo-patternable low-κ concept is, therefore, a promising technology for highly efficient semiconductor Cu BEOL manufacturing.

Self-sensing of dielectric elastomer actuator enhanced by artificial neural network

NASA Astrophysics Data System (ADS)

Ye, Zhihang; Chen, Zheng

2017-09-01

Dielectric elastomer (DE) is a type of soft actuating material, the shape of which can be changed under electrical voltage stimuli. DE materials have promising usage in future’s soft actuators and sensors, such as soft robotics, energy harvesters, and wearable sensors. In this paper, a stripe DE actuator with integrated sensing capability is designed, fabricated, and characterized. Since the strip actuator can be approximated as a compliant capacitor, it is possible to detect the actuator’s displacement by analyzing the actuator’s impedance change. An integrated sensing scheme that adds a high frequency probing signal into actuation signal is developed. Electrical impedance changes in the probing signal are extracted by fast Fourier transform algorithm, and nonlinear data fitting methods involving artificial neural network are implemented to detect the actuator’s displacement. A series of experiments show that by improving data processing and analyzing methods, the integrated sensing method can achieve error level of lower than 1%.

Combinatorial materials synthesis and high-throughput screening: an integrated materials chip approach to mapping phase diagrams and discovery and optimization of functional materials.

PubMed

Xiang, X D

Combinatorial materials synthesis methods and high-throughput evaluation techniques have been developed to accelerate the process of materials discovery and optimization and phase-diagram mapping. Analogous to integrated circuit chips, integrated materials chips containing thousands of discrete different compositions or continuous phase diagrams, often in the form of high-quality epitaxial thin films, can be fabricated and screened for interesting properties. Microspot x-ray method, various optical measurement techniques, and a novel evanescent microwave microscope have been used to characterize the structural, optical, magnetic, and electrical properties of samples on the materials chips. These techniques are routinely used to discover/optimize and map phase diagrams of ferroelectric, dielectric, optical, magnetic, and superconducting materials.

Multifunctional Hybrid Multilayer Gate Dielectrics with Tunable Surface Energy for Ultralow-Power Organic and Amorphous Oxide Thin-Film Transistors.

PubMed

Byun, Hye-Ran; You, Eun-Ah; Ha, Young-Geun

2017-03-01

For large-area, printable, and flexible electronic applications using advanced semiconductors, novel dielectric materials with excellent capacitance, insulating property, thermal stability, and mechanical flexibility need to be developed to achieve high-performance, ultralow-voltage operation of thin-film transistors (TFTs). In this work, we first report on the facile fabrication of multifunctional hybrid multilayer gate dielectrics with tunable surface energy via a low-temperature solution-process to produce ultralow-voltage organic and amorphous oxide TFTs. The hybrid multilayer dielectric materials are constructed by iteratively stacking bifunctional phosphonic acid-based self-assembled monolayers combined with ultrathin high-k oxide layers. The nanoscopic thickness-controllable hybrid dielectrics exhibit the superior capacitance (up to 970 nF/cm 2 ), insulating property (leakage current densities <10 -7 A/cm 2 ), and thermal stability (up to 300 °C) as well as smooth surfaces (root-mean-square roughness <0.35 nm). In addition, the surface energy of the hybrid multilayer dielectrics are easily changed by switching between mono- and bifunctional phosphonic acid-based self-assembled monolayers for compatible fabrication with both organic and amorphous oxide semiconductors. Consequently, the hybrid multilayer dielectrics integrated into TFTs reveal their excellent dielectric functions to achieve high-performance, ultralow-voltage operation (< ± 2 V) for both organic and amorphous oxide TFTs. Because of the easily tunable surface energy, the multifunctional hybrid multilayer dielectrics can also be adapted for various organic and inorganic semiconductors, and metal gates in other device configurations, thus allowing diverse advanced electronic applications including ultralow-power and large-area electronic devices.

SYNTHESIS OF NOVEL ALL-DIELECTRIC GRATING FILTERS USING GENETIC ALGORITHMS

NASA Technical Reports Server (NTRS)

Zuffada, Cinzia; Cwik, Tom; Ditchman, Christopher

1997-01-01

We are concerned with the design of inhomogeneous, all dielectric (lossless) periodic structures which act as filters. Dielectric filters made as stacks of inhomogeneous gratings and layers of materials are being used in optical technology, but are not common at microwave frequencies. The problem is then finding the periodic cell's geometric configuration and permittivity values which correspond to a specified reflectivity/transmittivity response as a function of frequency/illumination angle. This type of design can be thought of as an inverse-source problem, since it entails finding a distribution of sources which produce fields (or quantities derived from them) of given characteristics. Electromagnetic sources (electric and magnetic current densities) in a volume are related to the outside fields by a well known linear integral equation. Additionally, the sources are related to the fields inside the volume by a constitutive equation, involving the material properties. Then, the relationship linking the fields outside the source region to those inside is non-linear, in terms of material properties such as permittivity, permeability and conductivity. The solution of the non-linear inverse problem is cast here as a combination of two linear steps, by explicitly introducing the electromagnetic sources in the computational volume as a set of unknowns in addition to the material unknowns. This allows to solve for material parameters and related electric fields in the source volume which are consistent with Maxwell's equations. Solutions are obtained iteratively by decoupling the two steps. First, we invert for the permittivity only in the minimization of a cost function and second, given the materials, we find the corresponding electric fields through direct solution of the integral equation in the source volume. The sources thus computed are used to generate the far fields and the synthesized triter response. The cost function is obtained by calculating the deviation between the synthesized value of reflectivity/transmittivity and the desired one. Solution geometries for the periodic cell are sought as gratings (ensembles of columns of different heights and widths), or combinations of homogeneous layers of different dielectric materials and gratings. Hence the explicit unknowns of the inversion step are the material permittivities and the relative boundaries separating homogeneous parcels of the periodic cell.

High precision slotted cavity measurement of a novel ceramic state polymer electrolyte

NASA Astrophysics Data System (ADS)

Quan, Wei; NurulAfsar, Mohammed

2018-01-01

Thin film materials are already used in a variety of microwave and higher frequency applications such as electrically tunable microwave devices, integrated circuits like MMICs, radomes, and radar absorbing coating. The determination of the dielectric properties of these films is thus of significant importance. The measurement of complex dielectric permittivity of thin films is very difficult at microwave, millimeter, and THz frequencies because both the amplitude change and phase shift are not large enough to evaluate the real part of the dielectric permittivity. A specially designed transverse slotted cavity for X-band microwave measurement has been designed and constructed to employ with a vector network analyzer to evaluate the real part of dielectric permittivity of thin films accurately and conveniently. Commercially available polymer thin films are measured to validate the methods.

The Current State of Silicone-Based Dielectric Elastomer Transducers.

PubMed

Madsen, Frederikke B; Daugaard, Anders E; Hvilsted, Søren; Skov, Anne L

2016-03-01

Silicone elastomers are promising materials for dielectric elastomer transducers (DETs) due to their superior properties such as high efficiency, reliability and fast response times. DETs consist of thin elastomer films sandwiched between compliant electrodes, and they constitute an interesting class of transducer due to their inherent lightweight and potentially large strains. For the field to progress towards industrial implementation, a leap in material development is required, specifically targeting longer lifetime and higher energy densities to provide more efficient transduction at lower driving voltages. In this review, the current state of silicone elastomers for DETs is summarised and critically discussed, including commercial elastomers, composites, polymer blends, grafted elastomers and complex network structures. For future developments in the field it is essential that all aspects of the elastomer are taken into account, namely dielectric losses, lifetime and the very often ignored polymer network integrity and stability. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Thermal Conductivity Measurement of Low-k Dielectric Films: Effect of Porosity and Density

NASA Astrophysics Data System (ADS)

Alam, M. T.; Pulavarthy, R. A.; Bielefeld, J.; King, S. W.; Haque, M. A.

2014-03-01

The thermal conductivity of low-dielectric-constant (low-k) SiOC:H and SiC:H thin films has been measured as a function of porosity using a heat transfer model based on a microfin geometry and infrared thermometry. Microscale specimens were patterned from blanket films, released from the substrate, and subsequently integrated with the experimental setup. Results show that the thermal conductivity of a dense specimen, 0.7 W/mK, can be reduced to as low as 0.1 W/mK by introducing 30% porosity into it. The measured thermal conductivity shows a nonlinear decrease with increasing porosity that approximately follows the porosity-weighted simple medium model for porous materials. Neither the differential effective medium nor the coherent potential model could predict the density dependence of the thermal conductivity. These results suggest that more careful consideration is required for application of generic porous materials modeling to low-k dielectrics.

In-situ integrated processing and characterization of thin films of high temperature superconductors, dielectrics and semiconductors by MOCVD

NASA Technical Reports Server (NTRS)

Singh, R.; Sinha, S.; Hsu, N. J.; Thakur, R. P. S.; Chou, P.; Kumar, A.; Narayan, J.

1990-01-01

In this strategy of depositing the basic building blocks of superconductors, semiconductors, and dielectric having common elements, researchers deposited superconducting films of Y-Ba-Cu-O, semiconductor films of Cu2O, and dielectric films of BaF2 and Y2O3 by metal oxide chemical vapor deposition (MOCVD). By switching source materials entering the chamber, and by using direct writting capability, complex device structures like three-terminal hybrid semiconductors/superconductors transistors can be fabricated. The Y-Ba-Cu-O superconducting thin films on BaF2/YSZ substrates show a T(sub c) of 80 K and are textured with most of the grains having their c-axis or a-axis perpendicular to the substrate. Electrical characteristics as well as structural characteristics of superconductors and related materials obtained by x-ray defraction, electron microscopy, and energy dispersive x-ray analysis are discussed.

In-situ integrated processing and characterization of thin films of high temperature superconductors, dielectrics and semiconductors by MOCVD

NASA Technical Reports Server (NTRS)

Singh, R.; Sinha, S.; Hsu, N. J.; Thakur, R. P. S.; Chou, P.; Kumar, A.; Narayan, J.

1991-01-01

In this strategy of depositing the basic building blocks of superconductors, semiconductors, and dielectrics having common elements, researchers deposited superconducting films of Y-Ba-Cu-O, semiconductor films of Cu2O, and dielectric films of BaF2 and Y2O3 by metal oxide chemical vapor deposition (MOCVD). By switching source materials entering the chamber, and by using direct writing capability, complex device structures like three terminal hybrid semiconductor/superconductor transistors can be fabricated. The Y-Ba-Cu-O superconducting thin films on BaF2/YSZ substrates show a T(sub c) of 80 K and are textured with most of the grains having their c-axis or a-axis perpendicular to the substrate. Electrical characteristics as well as structural characteristics of superconductors and related materials obtained by x-ray deffraction, electron microscopy, and energy dispersive x-ray analysis are discussed.

Impact of high-κ dielectric and metal nanoparticles in simultaneous enhancement of programming speed and retention time of nano-flash memory

NASA Astrophysics Data System (ADS)

Pavel, Akeed A.; Khan, Mehjabeen A.; Kirawanich, Phumin; Islam, N. E.

2008-10-01

A methodology to simulate memory structures with metal nanocrystal islands embedded as floating gate in a high-κ dielectric material for simultaneous enhancement of programming speed and retention time is presented. The computational concept is based on a model for charge transport in nano-scaled structures presented earlier, where quantum mechanical tunneling is defined through the wave impedance that is analogous to the transmission line theory. The effects of substrate-tunnel dielectric conduction band offset and metal work function on the tunneling current that determines the programming speed and retention time is demonstrated. Simulation results confirm that a high-κ dielectric material can increase programming current due to its lower conduction band offset with the substrate and also can be effectively integrated with suitable embedded metal nanocrystals having high work function for efficient data retention. A nano-memory cell designed with silver (Ag) nanocrystals embedded in Al 2O 3 has been compared with similar structure consisting of Si nanocrystals in SiO 2 to validate the concept.

High- k Gate Dielectrics for Emerging Flexible and Stretchable Electronics.

PubMed

Wang, Binghao; Huang, Wei; Chi, Lifeng; Al-Hashimi, Mohammed; Marks, Tobin J; Facchetti, Antonio

2018-05-22

Recent advances in flexible and stretchable electronics (FSE), a technology diverging from the conventional rigid silicon technology, have stimulated fundamental scientific and technological research efforts. FSE aims at enabling disruptive applications such as flexible displays, wearable sensors, printed RFID tags on packaging, electronics on skin/organs, and Internet-of-things as well as possibly reducing the cost of electronic device fabrication. Thus, the key materials components of electronics, the semiconductor, the dielectric, and the conductor as well as the passive (substrate, planarization, passivation, and encapsulation layers) must exhibit electrical performance and mechanical properties compatible with FSE components and products. In this review, we summarize and analyze recent advances in materials concepts as well as in thin-film fabrication techniques for high- k (or high-capacitance) gate dielectrics when integrated with FSE-compatible semiconductors such as organics, metal oxides, quantum dot arrays, carbon nanotubes, graphene, and other 2D semiconductors. Since thin-film transistors (TFTs) are the key enablers of FSE devices, we discuss TFT structures and operation mechanisms after a discussion on the needs and general requirements of gate dielectrics. Also, the advantages of high- k dielectrics over low- k ones in TFT applications were elaborated. Next, after presenting the design and properties of high- k polymers and inorganic, electrolyte, and hybrid dielectric families, we focus on the most important fabrication methodologies for their deposition as TFT gate dielectric thin films. Furthermore, we provide a detailed summary of recent progress in performance of FSE TFTs based on these high- k dielectrics, focusing primarily on emerging semiconductor types. Finally, we conclude with an outlook and challenges section.

Emerging Applications for High K Materials in VLSI Technology

PubMed Central

Clark, Robert D.

2014-01-01

The current status of High K dielectrics in Very Large Scale Integrated circuit (VLSI) manufacturing for leading edge Dynamic Random Access Memory (DRAM) and Complementary Metal Oxide Semiconductor (CMOS) applications is summarized along with the deposition methods and general equipment types employed. Emerging applications for High K dielectrics in future CMOS are described as well for implementations in 10 nm and beyond nodes. Additional emerging applications for High K dielectrics include Resistive RAM memories, Metal-Insulator-Metal (MIM) diodes, Ferroelectric logic and memory devices, and as mask layers for patterning. Atomic Layer Deposition (ALD) is a common and proven deposition method for all of the applications discussed for use in future VLSI manufacturing. PMID:28788599

Characterization of dielectric materials

DOE Office of Scientific and Technical Information (OSTI.GOV)

King, Danny J.; Babinec, Susan; Hagans, Patrick L.

2017-06-27

A system and a method for characterizing a dielectric material are provided. The system and method generally include applying an excitation signal to electrodes on opposing sides of the dielectric material to evaluate a property of the dielectric material. The method can further include measuring the capacitive impedance across the dielectric material, and determining a variation in the capacitive impedance with respect to either or both of a time domain and a frequency domain. The measured property can include pore size and surface imperfections. The method can still further include modifying a processing parameter as the dielectric material is formedmore » in response to the detected variations in the capacitive impedance, which can correspond to a non-uniformity in the dielectric material.« less

Smart skin spiral antenna with chiral absorber

NASA Astrophysics Data System (ADS)

Varadan, Vijay K.; Varadan, Vasundara V.

1995-05-01

Recently there has been considerable interest toward designing 'smart skins' for aircraft. The smart skin is a composite layer which may contain conformal radars, conformal microstrip antennas or spiral antennas for electromagnetic applications. These embedded antennas will give rise to very low radar cross section (RCS) or can be completely 'hidden' to tracking radar. In addition, they can be used to detect, monitor or even jam other unwanted electromagnetic field signatures. This paper is designed to address some technical advances made to reduce the size of spiral antennas using tunable dielectric materials and chiral absorbers. The purpose is to design, develop and fabricate a thin, wideband, conformal spiral antenna architecture that is structurally integrable and which uses advanced Penn State dielectric and absorber materials to achieve wideband ground planes, and together with low RCS. Traditional practice has been to design radome and antenna as separate entities and then resolve any interface problems during an integration phase. A structurally integrable conformal antenna, however, demands that the functional components be highly integrated both conceptually and in practice. Our concept is to use the lower skin of the radome as a substrate on which the radiator can be made using standard photolithography, thick film or LTCC techniques.

Growth, strain relaxation properties and high-κ dielectric integration of mixed-anion GaAs{sub 1-y}Sb{sub y} metamorphic materials

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhu, Y.; Clavel, M.; Goley, P.

Mixed-anion, GaAs{sub 1-y}Sb{sub y} metamorphic materials with a wide range of antimony (Sb) compositions extending from 15% to 62%, were grown by solid source molecular beam epitaxy (MBE) on GaAs substrates. The impact of different growth parameters on the Sb composition in GaAs{sub 1-y}Sb{sub y} materials was systemically investigated. The Sb composition was well-controlled by carefully optimizing the As/Ga ratio, the Sb/Ga ratio, and the substrate temperature during the MBE growth process. High-resolution x-ray diffraction demonstrated a quasi-complete strain relaxation within each composition of GaAs{sub 1-y}Sb{sub y}. Atomic force microscopy exhibited smooth surface morphologies across the wide range of Sbmore » compositions in the GaAs{sub 1-y}Sb{sub y} structures. Selected high-κ dielectric materials, Al{sub 2}O{sub 3}, HfO{sub 2}, and Ta{sub 2}O{sub 5} were deposited using atomic layer deposition on the GaAs{sub 0.38}Sb{sub 0.62} material, and their respective band alignment properties were investigated by x-ray photoelectron spectroscopy (XPS). Detailed XPS analysis revealed a valence band offset of >2 eV for all three dielectric materials on GaAs{sub 0.38}Sb{sub 0.62}, indicating the potential of utilizing these dielectrics on GaAs{sub 0.38}Sb{sub 0.62} for p-type metal-oxide-semiconductor (MOS) applications. Moreover, both Al{sub 2}O{sub 3} and HfO{sub 2} showed a conduction band offset of >2 eV on GaAs{sub 0.38}Sb{sub 0.62}, suggesting these two dielectrics can also be used for n-type MOS applications. The well-controlled Sb composition in several GaAs{sub 1-y}Sb{sub y} material systems and the detailed band alignment analysis of multiple high-κ dielectric materials on a fixed Sb composition, GaAs{sub 0.38}Sb{sub 0.62}, provides a pathway to utilize GaAs{sub 1-y}Sb{sub y} materials in future microelectronic and optoelectronic applications.« less

A solid-state dielectric elastomer switch for soft logic

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chau, Nixon; Slipher, Geoffrey A., E-mail: geoffrey.a.slipher.civ@mail.mil; Mrozek, Randy A.

In this paper, we describe a stretchable solid-state electronic switching material that operates at high voltage potentials, as well as a switch material benchmarking technique that utilizes a modular dielectric elastomer (artificial muscle) ring oscillator. The solid-state switching material was integrated into our oscillator, which self-started after 16 s and performed 5 oscillations at a frequency of 1.05 Hz with 3.25 kV DC input. Our materials-by-design approach for the nickel filled polydimethylsiloxane based switch has resulted in significant improvements over previous carbon grease-based switches in four key areas, namely, sharpness of switching behavior upon applied stretch, magnitude of electrical resistance change, ease ofmore » manufacture, and production rate. Switch lifetime was demonstrated to be in the range of tens to hundreds of cycles with the current process. An interesting and potentially useful strain-based switching hysteresis behavior is also presented.« less

Computation of Dielectric Response in Molecular Solids for High Capacitance Organic Dielectrics.

PubMed

Heitzer, Henry M; Marks, Tobin J; Ratner, Mark A

2016-09-20

The dielectric response of a material is central to numerous processes spanning the fields of chemistry, materials science, biology, and physics. Despite this broad importance across these disciplines, describing the dielectric environment of a molecular system at the level of first-principles theory and computation remains a great challenge and is of importance to understand the behavior of existing systems as well as to guide the design and synthetic realization of new ones. Furthermore, with recent advances in molecular electronics, nanotechnology, and molecular biology, it has become necessary to predict the dielectric properties of molecular systems that are often difficult or impossible to measure experimentally. In these scenarios, it is would be highly desirable to be able to determine dielectric response through efficient, accurate, and chemically informative calculations. A good example of where theoretical modeling of dielectric response would be valuable is in the development of high-capacitance organic gate dielectrics for unconventional electronics such as those that could be fabricated by high-throughput printing techniques. Gate dielectrics are fundamental components of all transistor-based logic circuitry, and the combination high dielectric constant and nanoscopic thickness (i.e., high capacitance) is essential to achieving high switching speeds and low power consumption. Molecule-based dielectrics offer the promise of cheap, flexible, and mass producible electronics when used in conjunction with unconventional organic or inorganic semiconducting materials to fabricate organic field effect transistors (OFETs). The molecular dielectrics developed to date typically have limited dielectric response, which results in low capacitances, translating into poor performance of the resulting OFETs. Furthermore, the development of better performing dielectric materials has been hindered by the current highly empirical and labor-intensive pace of synthetic progress. An accurate and efficient theoretical computational approach could drastically decrease this time by screening potential dielectric materials and providing reliable design rules for future molecular dielectrics. Until recently, accurate calculation of dielectric responses in molecular materials was difficult and highly approximate. Most previous modeling efforts relied on classical formalisms to relate molecular polarizability to macroscopic dielectric properties. These efforts often vastly overestimated polarizability in the subject materials and ignored crucial material properties that can affect dielectric response. Recent advances in first-principles calculations via density functional theory (DFT) with periodic boundary conditions have allowed accurate computation of dielectric properties in molecular materials. In this Account, we outline the methodology used to calculate dielectric properties of molecular materials. We demonstrate the validity of this approach on model systems, capturing the frequency dependence of the dielectric response and achieving quantitative accuracy compared with experiment. This method is then used as a guide to new high-capacitance molecular dielectrics by determining what materials and chemical properties are important in maximizing dielectric response in self-assembled monolayers (SAMs). It will be seen that this technique is a powerful tool for understanding and designing new molecular dielectric systems, the properties of which are fundamental to many scientific areas.

Thermal conductivity and thermal boundary resistance of atomic layer deposited high-k dielectric aluminum oxide, hafnium oxide, and titanium oxide thin films on silicon

NASA Astrophysics Data System (ADS)

Scott, Ethan A.; Gaskins, John T.; King, Sean W.; Hopkins, Patrick E.

2018-05-01

The need for increased control of layer thickness and uniformity as device dimensions shrink has spurred increased use of atomic layer deposition (ALD) for thin film growth. The ability to deposit high dielectric constant (high-k) films via ALD has allowed for their widespread use in a swath of optical, optoelectronic, and electronic devices, including integration into CMOS compatible platforms. As the thickness of these dielectric layers is reduced, the interfacial thermal resistance can dictate the overall thermal resistance of the material stack compared to the resistance due to the finite dielectric layer thickness. Time domain thermoreflectance is used to interrogate both the thermal conductivity and the thermal boundary resistance of aluminum oxide, hafnium oxide, and titanium oxide films on silicon. We calculate a representative design map of effective thermal resistances, including those of the dielectric layers and boundary resistances, as a function of dielectric layer thickness, which will be of great importance in predicting the thermal resistances of current and future devices.

Effect of UV curing time on physical and electrical properties and reliability of low dielectric constant materials

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kao, Kai-Chieh; Cheng, Yi-Lung, E-mail: yjcheng@ncnu.edu.tw; Chang, Wei-Yuan

2014-11-01

This study comprehensively investigates the effect of ultraviolet (UV) curing time on the physical, electrical, and reliability characteristics of porous low-k materials. Following UV irradiation for various periods, the depth profiles of the chemical composition in the low-k dielectrics were homogeneous. Initially, the UV curing process preferentially removed porogen-related CH{sub x} groups and then modified Si-CH{sub 3} and cage Si-O bonds to form network Si-O bonds. The lowest dielectric constant (k value) was thus obtained at a UV curing time of 300 s. Additionally, UV irradiation made porogen-based low-k materials hydrophobic and to an extent that increased with UV curing time.more » With a short curing time (<300 s), porogen was not completely removed and the residues degraded reliability performance. A long curing time (>300 s) was associated with improved mechanical strength, electrical performance, and reliability of the low-k materials, but none of these increased linearly with UV curing time. Therefore, UV curing is necessary, but the process time must be optimized for porous low-k materials on back-end of line integration in 45 nm or below technology nodes.« less

Polymer Nanocomposite Materials with High Dielectric Permittivity and Low Dielectric Loss Properties

NASA Astrophysics Data System (ADS)

Toor, Anju

Materials with high dielectric permittivity have drawn increasing interests in recent years for their important applications in capacitors, actuators, and high energy density pulsed power. Particularly, polymer-based dielectrics are excellent candidates, owing to their properties such as high breakdown strength, low dielectric loss, flexibility and easy processing. To enhance the dielectric permittivity of polymer materials, typically, high dielectric constant filler materials are added to the polymer. Previously, ferroelectric and conductive fillers have been mainly used. However, such systems suffered from various limitations. For example, composites based on ferroelectric materials like barium titanate, exhibited high dielectric loss, and poor saturation voltages. Conductive fillers are used in the form of powder aggregates, and they may show 10-100 times enhancement in dielectric constant, however these nanoparticle aggregates cause the dielectric loss to be significant. Also, agglomerates limit the volume fraction of fillers in polymer and hence, the ability to achieve superior dielectric constants. Thus, the aggregation of nanoparticles is a significant challenge to their use to improve the dielectric permittivity. We propose the use of ligand-coated metal nanoparticle fillers to enhance the dielectric properties of the host polymer while minimizing dielectric loss by preventing nanoparticle agglomeration. The focus is on obtaining uniform dispersion of nanoparticles with no agglomeration by utilizing appropriate ligands/surface functionalizations on the gold nanoparticle surface. Use of ligand coated metal nanoparticles will enhance the dielectric constant while minimizing dielectric loss, even with the particles closely packed in the polymer matrix. Novel combinations of materials, which use 5 nm diameter metal nanoparticles embedded inside high breakdown strength polymer materials are evaluated. High breakdown strength polymer materials are chosen to allow further exploration of these materials for energy storage applications. In summary, two novel nanocomposite materials are designed and synthesized, one involving polyvinylidene fluoride (PVDF) as the host polymer for potential applications in energy storage and the other with SU-8 for microelectronic applications. Scanning elec- tron microscopy (SEM), transmission electron microscopy (TEM), energy dispersive X-ray spectroscopy and ultramicrotoming techniques were used for the material characterization of the nanocomposite materials. A homogeneous dispersion of gold nanoparticles with low particle agglomeration has been achieved. Fabricated nanoparticle polymer composite films showed the absence of voids and cracks. Also, no evidence of macro-phase separation of nanoparticles from the polymer phase was observed. This is important because nanoparticle agglomeration and phase separation from the polymer usually results in poor processability of films and a high defect density. Dielectric characterization of the nanocomposite materials showed enhancement in the dielectric constant over the base polymer values and low dielectric loss values were observed.

Complex oxide thin films for microelectronics

NASA Astrophysics Data System (ADS)

Suvorova, Natalya

The rapid scaling of the device dimensions, namely in metal oxide semiconductor field effect transistor (MOSFET), is reaching its fundamental limit which includes the increase in allowable leakage current due to direct tunneling with decrease of physical thickness of SiO2 gate dielectric. The significantly higher relative dielectric constant (in the range 9--25) of the gate dielectric beyond the 3.9 value of silicon dioxide will allow increasing the physical thickness. Among the choices for the high dielectric constant (K) materials for future generation MOSFET application, barium strontium titanate (BST) and strontium titanate (STO) possess one of the highest attainable K values making them the promising candidates for alternative gate oxide. However, the gate stack engineering does not imply the simple replacement of the SiO2 with the new dielectric. Several requirements should be met for successful integration of a new material. The major one is a production of high level of interface states (Dit) compared to that of SiO 2 on Si. An insertion of a thin SiO2 layer prior the growth of high-K thin film is a simple solution that helps to limit reaction with Si substrate and attains a high quality interface. However, the combination of two thin films reduces the overall K of the dielectric stack. An optimization of the SiO2 underlayer in order to maintain the interface quality yet minimize the effect on K is the focus of this work. The results from our study are presented with emphasis on the key process parameters that improve the dielectric film stack. For in-situ growth characterization of BST and STO films sputter deposited on thermally oxidized Si substrates spectroscopic ellipsometry in combination with time of flight ion scattering and recoil spectrometry have been employed. Studies of material properties have been complemented with analytical electron microscopy. To evaluate the interface quality the electrical characterization has been employed using capacitance-voltage and conductance-voltage measurements. Special attention was given to the extraction of static dielectric constant of BST and STO from the multiple film stack. The K value was found to be sensitive to the input parameters such as dielectric constant and thickness of interface layers.

On-chip copper-dielectric interference filters for manufacturing of ambient light and proximity CMOS sensors.

PubMed

Frey, Laurent; Masarotto, Lilian; D'Aillon, Patrick Gros; Pellé, Catherine; Armand, Marilyn; Marty, Michel; Jamin-Mornet, Clémence; Lhostis, Sandrine; Le Briz, Olivier

2014-07-10

Filter technologies implemented on CMOS image sensors for spectrally selective applications often use a combination of on-chip organic resists and an external substrate with multilayer dielectric coatings. The photopic-like and near-infrared bandpass filtering functions respectively required by ambient light sensing and user proximity detection through time-of-flight can be fully integrated on chip with multilayer metal-dielectric filters. Copper, silicon nitride, and silicon oxide are the materials selected for a technological proof-of-concept on functional wafers, due to their immediate availability in front-end semiconductor fabs. Filter optical designs are optimized with respect to specific performance criteria, and the robustness of the designs regarding process errors are evaluated for industrialization purposes.

Integrated power passives

NASA Technical Reports Server (NTRS)

Xie, Huikai (Inventor); Ngo, Khai D. T. (Inventor)

2013-01-01

A multi-layer film-stack and method for forming the multilayer film-stack is given where a series of alternating layers of conducting and dielectric materials are deposited such that the conducting layers can be selectively addressed. The use of the method to form integratable high capacitance density capacitors and complete the formation of an integrated power system-on-a-chip device including transistors, conductors, inductors, and capacitors is also given.

Tunable surface plasmon devices

DOEpatents

Shaner, Eric A [Rio Rancho, NM; Wasserman, Daniel [Lowell, MA

2011-08-30

A tunable extraordinary optical transmission (EOT) device wherein the tunability derives from controlled variation of the dielectric constant of a semiconducting material (semiconductor) in evanescent-field contact with a metallic array of sub-wavelength apertures. The surface plasmon resonance wavelength can be changed by changing the dielectric constant of the dielectric material. In embodiments of this invention, the dielectric material is a semiconducting material. The dielectric constant of the semiconducting material in the metal/semiconductor interfacial region is controllably adjusted by adjusting one or more of the semiconductor plasma frequency, the concentration and effective mass of free carriers, and the background high-frequency dielectric constant in the interfacial region. Thermal heating and/or voltage-gated carrier-concentration changes may be used to variably adjust the value of the semiconductor dielectric constant.

500 C Electronic Packaging and Dielectric Materials for High Temperature Applications

NASA Technical Reports Server (NTRS)

Chen, Liang-yu; Neudeck, Philip G.; Spry, David J.; Beheim, Glenn M.; Hunter, Gary W.

2016-01-01

High-temperature environment operable sensors and electronics are required for exploring the inner solar planets and distributed control of next generation aeronautical engines. Various silicon carbide (SiC) high temperature sensors, actuators, and electronics have been demonstrated at and above 500C. A compatible packaging system is essential for long-term testing and application of high temperature electronics and sensors. High temperature passive components are also necessary for high temperature electronic systems. This talk will discuss ceramic packaging systems developed for high temperature electronics, and related testing results of SiC circuits at 500C and silicon-on-insulator (SOI) integrated circuits at temperatures beyond commercial limit facilitated by these high temperature packaging technologies. Dielectric materials for high temperature multilayers capacitors will also be discussed. High-temperature environment operable sensors and electronics are required for probing the inner solar planets and distributed control of next generation aeronautical engines. Various silicon carbide (SiC) high temperature sensors, actuators, and electronics have been demonstrated at and above 500C. A compatible packaging system is essential for long-term testing and eventual applications of high temperature electronics and sensors. High temperature passive components are also necessary for high temperature electronic systems. This talk will discuss ceramic packaging systems developed for high electronics and related testing results of SiC circuits at 500C and silicon-on-insulator (SOI) integrated circuits at temperatures beyond commercial limit facilitated by high temperature packaging technologies. Dielectric materials for high temperature multilayers capacitors will also be discussed.

Integrated sensing and actuation of dielectric elastomer actuator

NASA Astrophysics Data System (ADS)

Ye, Zhihang; Chen, Zheng

2017-04-01

Dielectric elastomer (DE) is a type of soft actuating material, the shape of which can be changed under electrical voltage stimuli. DE materials have great potential in applications involving energy harvesters, micro-manipulators, and adaptive optics. In this paper, a stripe DE actuator with integrated sensing and actuation is designed and fabricated, and characterized through several experiments. Considering the actuator's capacitor-like structure and its deform mechanism, detecting the actuator's displacement through the actuator's circuit feature is a potential approach. A self-sensing scheme that adds a high frequency probing signal into actuation signal is developed. A fast Fourier transform (FFT) algorithm is used to extract the magnitude change of the probing signal, and a non-linear fitting method and artificial neural network (ANN) approach are utilized to reflect the relationship between the probing signal and the actuator's displacement. Experimental results showed this structure has capability of performing self-sensing and actuation, simultaneously. With an enhanced ANN, the self-sensing scheme can achieve 2.5% accuracy.

Polymer Composite and Nanocomposite Dielectric Materials for Pulse Power Energy Storage †

PubMed Central

Barber, Peter; Balasubramanian, Shiva; Anguchamy, Yogesh; Gong, Shushan; Wibowo, Arief; Gao, Hongsheng; Ploehn, Harry J.; zur Loye, Hans-Conrad

2009-01-01

This review summarizes the current state of polymer composites used as dielectric materials for energy storage. The particular focus is on materials: polymers serving as the matrix, inorganic fillers used to increase the effective dielectric constant, and various recent investigations of functionalization of metal oxide fillers to improve compatibility with polymers. We review the recent literature focused on the dielectric characterization of composites, specifically the measurement of dielectric permittivity and breakdown field strength. Special attention is given to the analysis of the energy density of polymer composite materials and how the functionalization of the inorganic filler affects the energy density of polymer composite dielectric materials.

Coulomb engineering of the bandgap and excitons in two-dimensional materials

DOE Office of Scientific and Technical Information (OSTI.GOV)

Raja, Archana; Chaves, Andrey; Yu, Jaeeun

Here, the ability to control the size of the electronic bandgap is an integral part of solid-state technology. Atomically thin two-dimensional crystals offer a new approach for tuning the energies of the electronic states based on the unusual strength of the Coulomb interaction in these materials and its environmental sensitivity. Here, we show that by engineering the surrounding dielectric environment, one can tune the electronic bandgap and the exciton binding energy in monolayers of WS 2 and WSe 2 by hundreds of meV. We exploit this behaviour to present an in-plane dielectric heterostructure with a spatially dependent bandgap, as anmore » initial step towards the creation of diverse lateral junctions with nanoscale resolution.« less

Coulomb engineering of the bandgap and excitons in two-dimensional materials

DOE PAGES

Raja, Archana; Chaves, Andrey; Yu, Jaeeun; ...

2017-05-04

Here, the ability to control the size of the electronic bandgap is an integral part of solid-state technology. Atomically thin two-dimensional crystals offer a new approach for tuning the energies of the electronic states based on the unusual strength of the Coulomb interaction in these materials and its environmental sensitivity. Here, we show that by engineering the surrounding dielectric environment, one can tune the electronic bandgap and the exciton binding energy in monolayers of WS 2 and WSe 2 by hundreds of meV. We exploit this behaviour to present an in-plane dielectric heterostructure with a spatially dependent bandgap, as anmore » initial step towards the creation of diverse lateral junctions with nanoscale resolution.« less

Coulomb engineering of the bandgap and excitons in two-dimensional materials

PubMed Central

Raja, Archana; Chaves, Andrey; Yu, Jaeeun; Arefe, Ghidewon; Hill, Heather M.; Rigosi, Albert F.; Berkelbach, Timothy C.; Nagler, Philipp; Schüller, Christian; Korn, Tobias; Nuckolls, Colin; Hone, James; Brus, Louis E.; Heinz, Tony F.; Reichman, David R.; Chernikov, Alexey

2017-01-01

The ability to control the size of the electronic bandgap is an integral part of solid-state technology. Atomically thin two-dimensional crystals offer a new approach for tuning the energies of the electronic states based on the unusual strength of the Coulomb interaction in these materials and its environmental sensitivity. Here, we show that by engineering the surrounding dielectric environment, one can tune the electronic bandgap and the exciton binding energy in monolayers of WS2 and WSe2 by hundreds of meV. We exploit this behaviour to present an in-plane dielectric heterostructure with a spatially dependent bandgap, as an initial step towards the creation of diverse lateral junctions with nanoscale resolution. PMID:28469178

Electroacoustic miniaturized DNA-biosensor.

PubMed

Gamby, Jean; Lazerges, Mathieu; Pernelle, Christine; Perrot, Hubert; Girault, Hubert H; Tribollet, Bernard

2007-11-01

A micrometer-sized electroacoustic DNA-biosensor was developed. The device included a thin semi-crystalline polyethylene terephthalate (PET) dielectric layer with two Ag microband electrodes on one side and a DNA thiol-labeled monolayer adsorbed on a gold surface on the other. A resonance wave was observed at 29 MHz with a network analyzer, upon AC voltage application between the two Ag electrodes, corresponding to electromechanical coupling induced by molecular dipoles of the PET polymer chain in the dielectric layer. It was found that the device size and geometry were well adapted to detect DNA hybridization, by measuring the capacity of the resonance response evolution: hybridization induced polarization of the dielectric material that affected the electromechanical coupling established in the dielectric layer. The 0.2 mm(2) sensor sensitive area allows detection in small volumes and still has higher detection levels for bioanalytical applications, the non-contact configuration adopted avoids electric faradic reactions that may damage biosensor sensitive layers, and finally, PET is a costless raw material, easy to process and well adapted for large scale production. The well-balanced technological and economic advantages of this kind of device make it a good candidate for biochip integration.

Brillouin light scattering studies on the mechanical properties of ultrathin, porous low-K dielectric films

NASA Astrophysics Data System (ADS)

Zhou, Wei; Sooryakumar, R.; King, Sean

2010-03-01

Low K dielectrics have predominantly replaced silicon dioxide as the interlayer dielectric material for interconnects in state of the art integrated circuits. To further reduce interconnect resistance-capacitance (RC) delays, additional reductions in the K for these low-K materials is being pursued by the introduction of controlled levels of porosity. The main challenge for porous low-K dielectrics is the substantial reduction in mechanical properties that is accompanied by the increased pore volume content needed to reduce K. We report on the application of the nondestructive Brillouin light scattering technique to monitor and characterize the mechanical properties of these porous films at thicknesses well below 200 nm that are pertinent to present applications. Observation of longitudinal and transverse standing wave acoustic resonances and the dispersion that accompany their transformation into traveling waves with finite in-plane wave vectors provides for the principal elastic constants that completely characterize the mechanical properties of these porous films. The mode amplitudes of the standing waves, their variation within the film, and the calculated Brillouin intensities account for most aspects of the spectra. The resulting elastic constants are compared with corresponding values obtained from other experimental techniques.

Size-dependent Hamaker constants for silver and gold nanoparticles

NASA Astrophysics Data System (ADS)

Pinchuk, Pavlo; Jiang, Ke

2015-08-01

Hamaker-Lifshitz constants are material specific constants that are used to calculate van der Waals interaction forces between small particles in solution. Typically, these constants are size-independent and material specific. According to the Lifshitz theory, the Hamaker-Lifshitz constants can be calculated by taking integrals that include the dielectric permittivity, as a function of frequency, of the interacting particles and the medium around particles. The dielectric permittivity of interacting metal nanoparticles can be calculated using the Drude model, which is based on the assumption of motion of free conducting electrons. For bulk metals, the Drude model does not predict any sizedependence of the dielectric permittivity. However, the conducting electrons in small noble metal nanoparticles (R ~ 10nm) exhibit surface scattering, which changes the complex permittivity function. In this work, we show theoretically that scattering of the free conducting electrons inside silver and gold nanoparticles with the size of 1 - 50 nm leads to size-dependent dielectric permittivity and Hamaker-Lifshitz constants. We calculate numerically the Hamaker-Lifshitz constants for silver and gold nanoparticles with different diameters. The results of the study might be of interests for understanding colloidal stability of metal nanoparticles.

Use of material dielectric properties in agricultural applications

USDA-ARS?s Scientific Manuscript database

The use of dielectric properties of materials for applications in agriculture are reviewed, and research findings on use of dielectric heating of materials and on sensing of product moisture content and other quality factors are discussed. Dielectric heating applications, include treatment of seed...

Strip dielectric wave guide antenna-for the measurement of dielectric constant of low-loss materials

NASA Astrophysics Data System (ADS)

Rastogi, Alok Kumar; Tiwari, A. K.; Shrivastava, R. P.

1993-07-01

The value of dielectric constant are the most important parameters in material science technology. In micro-wave and millimeter wave circuits using dielectric materials the values of this parameters should be known accurately. It is observed that the number of methods are reported in litrature, however these methods impose difficulties in experimentation and are not very accurate. In this paper a novel approach to the measurement of the dielectric constant of low loss materials at micro-wave and millimeter wave frequencies has been discussed. In this method by using antenna theory, a metallic strip dielectric guide is taken in to constideration and band reject phenomenon of dielectric antenna is used. Frequency response of an antenna in band reject mode is a function of the dimensional parameters, such as the metallic strip period, the profile of the metallic strip and the dielectric constant of the material used. Hence if one measure the frequency responce of the antenna in band reject mode, the dielectric constant of the material is determined provided all other parameters are known. This method gives a direct measure of dielectric constant and is quite accurate as computer techniques are used for evaluating the dielectric constant. This method verified experimentally also.

Trends of microwave dielectric materials for antenna application

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sulong, T. A. T., E-mail: tuanamirahtuansulong@gmail.com; Osman, R. A. M., E-mail: rozana@unimap.edu.my; Idris, M. S., E-mail: sobri@unimap.edu.my

Rapid development of a modern microwave communication system requires a high quality microwave dielectric ceramic material to be used as mobile and satellite communication. High permittivity of dielectric ceramics leads to fabrication of compact device for electronic components. Dielectric ceramics which used for microwave applications required three important parameters such as high or appropriate permittivity (ε{sub r}), high quality factor (Q {sub f} ≥ 5000 GH z) and good temperature coefficient of resonant frequency (τ{sub f}). This paper review of various dielectric ceramic materials used as microwave dielectric materials and related parameters for antenna applications.

High-k 3D-barium titanate foam/phenolphthalein poly(ether sulfone)/cyanate ester composites with frequency-stable dielectric properties and extremely low dielectric loss under reduced concentration of ceramics

NASA Astrophysics Data System (ADS)

Zheng, Longhui; Yuan, Li; Guan, Qingbao; Liang, Guozheng; Gu, Aijuan

2018-01-01

Higher dielectric constant, lower dielectric loss and better frequency stability have been the developing trends for high dielectric constant (high-k) materials. Herein, new composites have been developed through building unique structure by using hyperbranched polysiloxane modified 3D-barium titanate foam (BTF) (BTF@HSi) as the functional fillers and phenolphthalein poly(ether sulfone) (cPES)/cyanate ester (CE) blend as the resin matrix. For BTF@HSi/cPES/CE composite with 34.1 vol% BTF, its dielectric constant at 100 Hz is as high as 162 and dielectric loss is only 0.007; moreover, the dielectric properties of BTF@HSi/cPES/CE composites exhibit excellent frequency stability. To reveal the mechanism behind these attractive performances of BTF@HSi/cPES/CE composites, three kinds of composites (BTF/CE, BTF/cPES/CE, BTF@HSi/CE) were prepared, their structure and integrated performances were intensively investigated and compared with those of BTF@HSi/cPES/CE composites. Results show that the surface modification of BTF is good for preparing composites with improved thermal stability; while introducing flexible cPES to CE is beneficial to fabricate composites with good quality through effectively blocking cracks caused by the stress concentration, and then endowing the composites with good dielectric properties at reduced concentration of ceramics.

Antenna with Dielectric Having Geometric Patterns

NASA Technical Reports Server (NTRS)

Dudley, Kenneth L. (Inventor); Cravey, Robin L. (Inventor); Connell, John W. (Inventor); Ghose, Sayata (Inventor); Watson, Kent A. (Inventor); Smith, Jr., Joseph G. (Inventor); Elliott, Holly A. (Inventor)

2013-01-01

An antenna includes a ground plane, a dielectric disposed on the ground plane, and an electrically-conductive radiator disposed on the dielectric. The dielectric includes at least one layer of a first dielectric material and a second dielectric material that collectively define a dielectric geometric pattern, which may comprise a fractal geometry. The radiator defines a radiator geometric pattern, and the dielectric geometric pattern is geometrically identical, or substantially geometrically identical, to the radiator geometric pattern.

Stress effects in ferroelectric perovskite thin-films

NASA Astrophysics Data System (ADS)

Zednik, Ricardo Johann

The exciting class of ferroelectric materials presents the engineer with an array of unique properties that offer promise in a variety of applications; these applications include infra-red detectors ("night-vision imaging", pyroelectricity), micro-electro-mechanical-systems (MEMS, piezoelectricity), and non-volatile memory (NVM, ferroelectricity). Realizing these modern devices often requires perovskite-based ferroelectric films thinner than 100 nm. Two such technologically important material systems are (Ba,Sr)TiO3 (BST), for tunable dielectric devices employed in wireless communications, and Pb(Zr,Ti)O3 (PZT), for ferroelectric non-volatile memory (FeRAM). In general, the material behavior is strongly influenced by the mechanical boundary conditions imposed by the substrate and surrounding layers and may vary considerably from the known bulk behavior. A better mechanistic understanding of these effects is essential for harnessing the full potential of ferroelectric thin-films and further optimizing existing devices. Both materials share a common crystal structure and similar properties, but face unique challenges due to the design parameters of these different applications. Tunable devices often require very low dielectric loss as well as large dielectric tunability. Present results show that the dielectric response of BST thin-films can either resemble a dipole-relaxor or follow the accepted empirical Universal Relaxation Law (Curie-von Schweidler), depending on temperature. These behaviors in a single ferroelectric thin-film system are often thought to be mutually exclusive. In state-of-the-art high density FeRAM, the ferroelectric polarization is at least as important as the dielectric response. It was found that these properties are significantly affected by moderate biaxial tensile and compressive stresses which reversibly alter the ferroelastic domain populations of PZT at room temperature. The 90-degree domain wall motion observed by high resolution synchrotron x-ray diffraction indicates that a small effective restoring stress of about 1 MPa acts on the domain walls in these nano-crystalline PZT films. This insight allows reversible control of the ferroelectric and dielectric behavior of these important functional oxide materials, with important implications for associated integrated devices.

Crosslinked polymeric dielectric materials and electronic devices incorporating same

NASA Technical Reports Server (NTRS)

Facchetti, Antonio (Inventor); Suh, legal representative, Nae-Jeong (Inventor); Marks, Tobin J. (Inventor); Choi, Hyuk-Jin (Inventor); Wang, Zhiming (Inventor)

2012-01-01

Solution-processable dielectric materials are provided, along with precursor compositions and processes for preparing the same. Composites and electronic devices including the dielectric materials also are provided.

Relationship of Cure Temperature to Mechanical, Physical, and Dielectric Performance of PDMS Glass Composite for Electric Motor Insulation

NASA Technical Reports Server (NTRS)

Miller, Sandi G.; Becker, Kathleen; Williams, Tiffany S.; Scheiman, Daniel A.; McCorkle, Linda S.; Heimann, Paula J.; Ring, Andrew; Woodworth, Andrew

2017-01-01

Achieving NASAs aggressive fuel burn and emission reduction for N-plus-3 aircraft will require hybrid electric propulsion system in which electric motors driven by either power generated from turbine or energy storage system will power the fan for propulsion. Motors designed for hybrid electric aircraft are expected to operate at medium to high voltages over long durations in a high altitude service environment. Such conditions have driven research toward the development of wire insulation with improved mechanical strength, thermal stability and increased breakdown voltage. The silicone class of materials has been considered for electric wire insulation due to its inherent thermal stability, dielectric strength and mechanical integrity. This paper evaluates the dependence of these properties on the cure conditions of a polydimethyl-siloxane (PDMS) elastomer; where both cure temperature and base-to-catalyst ratio were varied. The PDMS elastomer was evaluated as a bulk material and an impregnation matrix within a lightweight glass veil support. The E-glass support was selected for mechanical stiffness and dielectric strength. This work has shown a correlation between cure conditions and material physical properties. Tensile strength increased with cure temperature whereas breakdown voltage tended to be independent of process variations. The results will be used to direct material formulation based on specific insulation requirements.

Low-voltage back-gated atmospheric pressure chemical vapor deposition based graphene-striped channel transistor with high-κ dielectric showing room-temperature mobility > 11,000 cm(2)/V·s.

PubMed

Smith, Casey; Qaisi, Ramy; Liu, Zhihong; Yu, Qingkai; Hussain, Muhammad Mustafa

2013-07-23

Utilization of graphene may help realize innovative low-power replacements for III-V materials based high electron mobility transistors while extending operational frequencies closer to the THz regime for superior wireless communications, imaging, and other novel applications. Device architectures explored to date suffer a fundamental performance roadblock due to lack of compatible deposition techniques for nanometer-scale dielectrics required to efficiently modulate graphene transconductance (gm) while maintaining low gate capacitance-voltage product (CgsVgs). Here we show integration of a scaled (10 nm) high-κ gate dielectric aluminum oxide (Al2O3) with an atmospheric pressure chemical vapor deposition (APCVD)-derived graphene channel composed of multiple 0.25 μm stripes to repeatedly realize room-temperature mobility of 11,000 cm(2)/V·s or higher. This high performance is attributed to the APCVD graphene growth quality, excellent interfacial properties of the gate dielectric, conductivity enhancement in the graphene stripes due to low tox/Wgraphene ratio, and scaled high-κ dielectric gate modulation of carrier density allowing full actuation of the device with only ±1 V applied bias. The superior drive current and conductance at Vdd = 1 V compared to other top-gated devices requiring undesirable seed (such as aluminum and poly vinyl alcohol)-assisted dielectric deposition, bottom gate devices requiring excessive gate voltage for actuation, or monolithic (nonstriped) channels suggest that this facile transistor structure provides critical insight toward future device design and process integration to maximize CVD-based graphene transistor performance.

Thin film integrated capacitors with sputtered-anodized niobium pentoxide dielectric for decoupling applications

NASA Astrophysics Data System (ADS)

Jacob, Susan

Electronics system miniaturization is a major driver for high-k materials. High-k materials in capacitors allow for high capacitance, enabling system miniaturization. Ta2O5 (k˜24) has been the dominant high-k material in the electronic industry for decoupling capacitors, filter capacitors, etc. In order to facilitate further system miniaturization, this project has investigated thin film integrated capacitors with Nb2O5 dielectric. Nb2O 5 has k˜41 and is a potential candidate for replacing Ta2O5. But, the presence of suboxides (NbO2 and NbO) in the dielectric deteriorates the electrical properties (leakage current, thermal instability of capacitance, etc.). Also, the high oxygen solubility of niobium results in oxygen diffusion from the dielectric to niobium metal, if any is present. The major purpose of this project was to check the ability of NbN as a diffusion barrier and fabricate thermally stable niobium capacitors. As a first step to produce niobium capacitors, the material characterizations of reactively sputtered Nb2O5 and NbN were done. Thickness and film composition, and crystal structures of the sputtered films were obtained and the deposition parameters for the desired stoichiometry were found. Also, anodized Nb2O5 was characterized for its stoichiometry and thickness. To study the effect of nitrides on capacitance and thermal stability, Ta2O5 capacitors were initially fabricated with and without TaN. The results showed that the nitride does not affect the capacitance, and that capacitors with TaN are stable up to 150°C. In the next step, niobium capacitors were first fabricated with anodized dielectric and the oxygen diffusion issues associated with capacitor processing were studied. Reactively sputtered Nb2O5 was anodized to form complete Nb2O5 (with few oxygen vacancies) and NbN was used to sandwich the dielectric. The capacitor fabrication was not successful due to the difficulties in anodizing the sputtered dielectric. Another method, anodizing reactively sputtered Nb2O5 and a thin layer of sputtered niobium metal yielded high yield (99%) capacitors. Capacitors were fabricated with and without NbN and the results showed 93% decrease in leakage for a capacitor with ˜2000 A dielectric when NbN was present in the structure. These capacitors could withstand 20 V and showed 2.7 muA leakage current at 5 V. These results were obtained after thermal storage at 100°C and 150°C in air for 168 hours at each temperature. Two set of experiments were performed using Ta2O5 dielectric: one to determine the effect of anodization end point on the thickness (capacitance) and the second to determine the effect of boiling the dielectric on functional yield. The anodization end point experiment showed that the final current of anodization along with the anodizing voltage determines the anodic oxide thickness. The lower the current, the thicker the films produced by anodization. Therefore, it was important to specify the final current along with the anodization voltage for oxide growth rate. The capacitors formed with boiled wafers showed better functional yield 3 out of 5 times compared with the unboiled wafer. Niobium anodization was studied for the Nb--->Nb 2O5 conversion ratio and the effect of anodization bath temperature on the oxide film; a color chart was prepared for thicknesses ranging from 1900 A - 5000 A. The niobium metal to oxide conversion ratio was found to change with temperature.

Method and system for making integrated solid-state fire-sets and detonators

DOEpatents

O'Brien, Dennis W.; Druce, Robert L.; Johnson, Gary W.; Vogtlin, George E.; Barbee, Jr., Troy W.; Lee, Ronald S.

1998-01-01

A slapper detonator comprises a solid-state high-voltage capacitor, a low-jitter dielectric breakdown switch and trigger circuitry, a detonator transmission line, an exploding foil bridge, and a flier material. All these components are fabricated in a single solid-state device using thin film deposition techniques.

Stand-off transmission lines and method for making same

DOEpatents

Tuckerman, David B.

1991-01-01

Standoff transmission lines in an integrated circuit structure are formed by etching away or removing the portion of the dielectric layer separating the microstrip metal lines and the ground plane from the regions that are not under the lines. The microstrip lines can be fabricated by a subtractive process of etching a metal layer, an additive process of direct laser writing fine lines followed by plating up the lines or a subtractive/additive process in which a trench is etched over a nucleation layer and the wire is electrolytically deposited. Microstrip lines supported on freestanding posts of dielectric material surrounded by air gaps are produced. The average dielectric constant between the lines and ground plane is reduced, resulting in higher characteristic impedance, less crosstalk between lines, increased signal propagation velocities, and reduced wafer stress.

Preparation of a Carbon Doped Tissue-Mimicking Material with High Dielectric Properties for Microwave Imaging Application

PubMed Central

Lan, Siang-Wen; Weng, Min-Hang; Yang, Ru-Yuan; Chang, Shoou-Jinn; Chung, Yaoh-Sien; Yu, Tsung-Chih; Wu, Chun-Sen

2016-01-01

In this paper, the oil-in-gelatin based tissue-mimicking materials (TMMs) doped with carbon based materials including carbon nanotube, graphene ink or lignin were prepared. The volume percent for gelatin based mixtures and oil based mixtures were both around 50%, and the doping amounts were 2 wt %, 4 wt %, and 6 wt %. The effect of doping material and amount on the microwave dielectric properties including dielectric constant and conductivity were investigated over an ultra-wide frequency range from 2 GHz to 20 GHz. The coaxial open-ended reflection technology was used to evaluate the microwave dielectric properties. Six measured values in different locations of each sample were averaged and the standard deviations of all the measured dielectric properties, including dielectric constant and conductivity, were less than one, indicating a good uniformity of the prepared samples. Without doping, the dielectric constant was equal to 23 ± 2 approximately. Results showed with doping of carbon based materials that the dielectric constant and conductivity both increased about 5% to 20%, and the increment was dependent on the doping amount. By proper selection of doping amount of the carbon based materials, the prepared material could map the required dielectric properties of special tissues. The proposed materials were suitable for the phantom used in the microwave medical imaging system. PMID:28773678

Helium Ion Secondary Electron Mode Microscopy For Interconnect Material Imaging

NASA Astrophysics Data System (ADS)

Ogawa, Shinichi; Thompson, William; Stern, Lewis; Scipioni, Larry; Notte, John; Farkas, Lou; Barriss, Louise

2010-04-01

The recently developed helium ion microscope (HIM) is now capable of 0.35 nm secondary electron (SE) mode image resolution. When low-k dielectrics or copper interconnects in ultra large scale integrated circuits (ULSI) interconnect structures were imaged in this mode, it was found that unique pattern dimension and fidelity information at sub-nanometer resolution was available for the first time. This paper will discuss the helium ion microscope architecture and the SE imaging techniques that make the HIM observation method of particular value to the low-k dielectric and dual damascene copper interconnect technologies.

Concentrating light in Cu(In,Ga)Se2 solar cells

NASA Astrophysics Data System (ADS)

Schmid, M.; Yin, G.; Song, M.; Duan, S.; Heidmann, B.; Sancho-Martinez, D.; Kämmer, S.; Köhler, T.; Manley, P.; Lux-Steiner, M. Ch.

2016-09-01

Light concentration has proven beneficial for solar cells, most notably for highly efficient but expensive absorber materials using high concentrations and large scale optics. Here we investigate light concentration for cost efficient thinfilm solar cells which show nano- or microtextured absorbers. Our absorber material of choice is Cu(In,Ga)Se2 (CIGSe) which has a proven stabilized record efficiency of 22.6% and which - despite being a polycrystalline thin-film material - is very tolerant to environmental influences. Taking a nanoscale approach, we concentrate light in the CIGSe absorber layer by integrating photonic nanostructures made from dielectric materials. The dielectric nanostructures give rise to resonant modes and field localization in their vicinity. Thus when inserted inside or adjacent to the absorber layer, absorption and efficiency enhancement are observed. In contrast to this internal absorption enhancement, external enhancement is exploited in the microscale approach: mm-sized lenses can be used to concentrate light onto CIGSe solar cells with lateral dimensions reduced down to the micrometer range. These micro solar cells come with the benefit of improved heat dissipation compared to the large scale concentrators and promise compact high efficiency devices. Both approaches of light concentration allow for reduction in material consumption by restricting the absorber dimension either vertically (ultra-thin absorbers for dielectric nanostructures) or horizontally (micro absorbers for concentrating lenses) and have significant potential for efficiency enhancement.

Concentrating light in Cu(In,Ga)Se2 solar cells

NASA Astrophysics Data System (ADS)

Schmid, Martina; Yin, Guanchao; Song, Min; Duan, Shengkai; Heidmann, Berit; Sancho-Martinez, Diego; Kämmer, Steven; Köhler, Tristan; Manley, Phillip; Lux-Steiner, Martha Ch.

2017-01-01

Light concentration has proven beneficial for solar cells, most notably for highly efficient but expensive absorber materials using high concentrations and large scale optics. Here, we investigate the light concentration for cost-efficient thin-film solar cells that show nano- or microtextured absorbers. Our absorber material of choice is Cu(In,Ga)Se2 (CIGSe), which has a proven stabilized record efficiency of 22.6% and which-despite being a polycrystalline thin-film material-is very tolerant to environmental influences. Taking a nanoscale approach, we concentrate light in the CIGSe absorber layer by integrating photonic nanostructures made from dielectric materials. The dielectric nanostructures give rise to resonant modes and field localization in their vicinity. Thus, when inserted inside or adjacent to the absorber layer, absorption and efficiency enhancement are observed. In contrast to this internal absorption enhancement, external enhancement is exploited in the microscaled approach: mm-sized lenses can be used to concentrate light onto CIGSe solar cells with lateral dimensions reduced down to the micrometer range. These micro solar cells come with the benefit of improved heat dissipation compared with the large scale concentrators and promise compact high-efficiency devices. Both approaches of light concentration allow for reduction in material consumption by restricting the absorber dimension either vertically (ultrathin absorbers for dielectric nanostructures) or horizontally (microabsorbers for concentrating lenses) and have significant potential for efficiency enhancement.

Surface-PlasmonoDielectric-polaritonic devices and systems

DOEpatents

None, None

2013-06-25

There is provided a structure for supporting propagation of surface plasmon polaritons. The structure includes a plasmonic material region and a dielectric material region, disposed adjacent to a selected surface of the plasmonic material region. At least one of the plasmonic material region and the dielectric material region have a dielectric permittivity distribution that is specified as a function of depth through the corresponding material region. This dielectric permittivity distribution is selected to impose prespecified group velocities, v.sub.gj, on a dispersion relation for a surface polaritonic mode of the structure for at least one of a corresponding set of prespecified frequencies, .omega..sub.j, and corresponding set of prespecified wavevectors, where j=1 to N.

Evaluation of Dielectric-Barrier-Discharge Actuator Substrate Materials

NASA Technical Reports Server (NTRS)

Wilkinson, Stephen P.; Siochi, Emilie J.; Sauti, Godfrey; Xu, Tian-Bing; Meador, Mary Ann; Guo, Haiquan

2014-01-01

A key, enabling element of a dielectric barrier discharge (DBD) actuator is the dielectric substrate material. While various investigators have studied the performance of different homogeneous materials, most often in the context of related DBD experiments, fundamental studies focused solely on the dielectric materials have received less attention. The purpose of this study was to conduct an experimental assessment of the body-force-generating performance of a wide range of dielectric materials in search of opportunities to improve DBD actuator performance. Materials studied included commonly available plastics and glasses as well as a custom-fabricated polyimide aerogel. Diagnostics included static induced thrust, electrical circuit parameters for 2D surface discharges and 1D volume discharges, and dielectric material properties. Lumped-parameter circuit simulations for the 1D case were conducted showing good correspondence to experimental data provided that stray capacitances are included. The effect of atmospheric humidity on DBD performance was studied showing a large influence on thrust. The main conclusion is that for homogeneous, dielectric materials at forcing voltages less than that required for streamer formation, the material chemical composition appears to have no effect on body force generation when actuator impedance is properly accounted for.

Excitation of the Uller-Zenneck electromagnetic surface waves in the prism-coupled configuration

NASA Astrophysics Data System (ADS)

Rasheed, Mehran; Faryad, Muhammad

2017-08-01

A configuration to excite the Uller-Zenneck surface electromagnetic waves at the planar interfaces of homogeneous and isotropic dielectric materials is proposed and theoretically analyzed. The Uller-Zenneck waves are surface waves that can exist at the planar interface of two dissimilar dielectric materials of which at least one is a lossy dielectric material. In this paper, a slab of a lossy dielectric material was taken with lossless dielectric materials on both sides. A canonical boundary-value problem was set up and solved to find the possible Uller-Zenneck waves and waveguide modes. The Uller-Zenneck waves guided by the slab of the lossy dielectric material were found to be either symmetric or antisymmetric and transmuted into waveguide modes when the thickness of that slab was increased. A prism-coupled configuration was then successfully devised to excite the Uller-Zenneck waves. The results showed that the Uller-Zenneck waves are excited at the same angle of incidence for any thickness of the slab of the lossy dielectric material, whereas the waveguide modes can be excited when the slab is sufficiently thick. The excitation of Uller-Zenneck waves at the planar interfaces with homogeneous and all-dielectric materials can usher in new avenues for the applications for electromagnetic surface waves.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Guo, Peijun; Weimer, Matthew S.; Emery, Jonathan D.

Actively tunable optical transmission through artificial metamaterials holds great promise for next-generation nanophotonic devices and metasurfaces. Plasmonic nanostructures and phase change materials have been extensively studied to this end due to their respective strong interactions with light and tunable dielectric constants under external stimuli. Seamlessly integrating plasmonic components with phase change materials, as demonstrated in the present work, can facilitate phase change by plasmonically enabled light confinement and meanwhile make use of the high sensitivity of plasmon resonances to the variation of dielectric constant associated with the phase change. The hybrid platform here is composed of plasmonic indium tin-oxide nanorodmore » arrays (ITO-NRAs) conformally coated with an ultrathin layer of a prototypical phase change material, vanadium dioxide (VO2), which enables all-optical modulation of the infrared as well as the visible spectral ranges. The interplay between the intrinsic plasmonic nonlinearity of ITO-NRAs and the phase transition induced permittivity change of VO2 gives rise to spectral and temporal responses that cannot be achieved with individual material components alone.« less

Extending Maxwell's equations for dielectric materials using analytical principles from viscoelasticity based on the fractional calculus

NASA Astrophysics Data System (ADS)

Wharmby, Andrew William

Existing fractional calculus models having a non-empirical basis used to describe constitutive relationships between stress and strain in viscoelastic materials are modified to employ all orders of fractional derivatives between zero and one. Parallels between viscoelastic and dielectric theory are drawn so that these modified fractional calculus based models for viscoelastic materials may be used to describe relationships between electric flux density and electric field intensity in dielectric materials. The resulting fractional calculus based dielectric relaxation model is tested using existing complex permittivity data in the radio-frequency bandwidth of a wide variety of homogeneous materials. The consequences that the application of this newly developed fractional calculus based dielectric relaxation model has on Maxwell's equations are also examined through the effects of dielectric dissipation and dispersion.

Mathematical analysis of the boundary-integral based electrostatics estimation approximation for molecular solvation: exact results for spherical inclusions.

PubMed

Bardhan, Jaydeep P; Knepley, Matthew G

2011-09-28

We analyze the mathematically rigorous BIBEE (boundary-integral based electrostatics estimation) approximation of the mixed-dielectric continuum model of molecular electrostatics, using the analytically solvable case of a spherical solute containing an arbitrary charge distribution. Our analysis, which builds on Kirkwood's solution using spherical harmonics, clarifies important aspects of the approximation and its relationship to generalized Born models. First, our results suggest a new perspective for analyzing fast electrostatic models: the separation of variables between material properties (the dielectric constants) and geometry (the solute dielectric boundary and charge distribution). Second, we find that the eigenfunctions of the reaction-potential operator are exactly preserved in the BIBEE model for the sphere, which supports the use of this approximation for analyzing charge-charge interactions in molecular binding. Third, a comparison of BIBEE to the recent GBε theory suggests a modified BIBEE model capable of predicting electrostatic solvation free energies to within 4% of a full numerical Poisson calculation. This modified model leads to a projection-framework understanding of BIBEE and suggests opportunities for future improvements. © 2011 American Institute of Physics

Fabrication of dielectric elastomer stack transducers (DEST) by liquid deposition modeling

NASA Astrophysics Data System (ADS)

Klug, Florian; Solano-Arana, Susana; Mößinger, Holger; Förster-Zügel, Florentine; Schlaak, Helmut F.

2017-04-01

Established fabrication methods for dielectric elastomer stack transducers (DEST) are mostly based on twodimensional thin-film technology. Because of this, DEST are based on simple two-dimensionally structured shapes. For certain applications, like valves or Braille displays, these structures are suited well enough. However, a more flexible fabrication method allows for more complex actuator designs, which would otherwise require extra processing steps. Fabrication methods with the possibility of three-dimensional structuring allow e.g. the integration of electrical connections, cavities, channels, sensor and other structural elements during the fabrication. This opens up new applications, as well as the opportunity for faster prototype production of individually designed DEST for a given application. In this work, a manufacturing system allowing three dimensional structuring is described. It enables the production of multilayer and three-dimensional structured DEST by liquid deposition modelling. The system is based on a custom made dual extruder, connected to a commercial threeaxis positioning system. It allows a computer controlled liquid deposition of two materials. After tuning the manufacturing parameters the production of thin layers with at thickness of less than 50 μm, as well as stacking electrode and dielectric materials is feasible. With this setup a first DEST with dielectric layer thickness less than 50 μm is build successfully and its performance is evaluated.

Submillimeter and far-infrared dielectric properties of thin films

NASA Astrophysics Data System (ADS)

Cataldo, Giuseppe; Wollack, Edward J.

2016-07-01

The complex dielectric function enables the study of a material's refractive and absorptive properties and provides information on a material's potential for practical application. Commonly employed line shape profile functions from the literature are briefly surveyed and their suitability for representation of dielectric material properties are discussed. An analysis approach to derive a material's complex dielectric function from observed transmittance spectra in the far-infrared and submillimeter regimes is presented. The underlying model employed satisfies the requirements set by the Kramers-Kronig relations. The dielectric function parameters derived from this approachtypically reproduce the observed transmittance spectra with an accuracy of < 4%.

Microwave dielectric properties of BNT-BT0.08 thin films prepared by sol-gel technique

NASA Astrophysics Data System (ADS)

Huitema, L.; Cernea, M.; Crunteanu, A.; Trupina, L.; Nedelcu, L.; Banciu, M. G.; Ghalem, A.; Rammal, M.; Madrangeas, V.; Passerieux, D.; Dutheil, P.; Dumas-Bouchiat, F.; Marchet, P.; Champeaux, C.

2016-04-01

We report for the first time the microwave characterization of 0.92(Bi0.5Na0.5)TiO3-0.08BaTiO3 (BNT-BT0.08) ferroelectric thin films fabricated by the sol-gel method and integrated in both planar and out-of-plane tunable capacitors for agile high-frequency applications and particularly on the WiFi frequency band from 2.4 GHz to 2.49 GHz. The permittivity and loss tangent of the realized BNT-BT0.08 layers have been first measured by a resonant cavity method working at 12.5 GHz. Then, we integrated the ferroelectric material in planar inter-digitated capacitors (IDC) and in out-of-plane metal-insulator-metal (MIM) devices and investigated their specific properties (dielectric tunability and losses) on the whole 100 MHz-15 GHz frequency domain. The 3D finite-elements electromagnetic simulations of the IDC capacitances are fitting very well with their measured responses and confirm the dielectric properties determined with the cavity method. While IDCs are not exhibiting an optimal tunability, the MIM capacitor devices with optimized Ir/MgO(100) bottom electrodes demonstrate a high dielectric tunability, of 30% at 2.45 GHz under applied voltages as low as 10 V, and it is reaching 50% under 20 V voltage bias at the same frequency. These high-frequency properties of the MIM devices integrating the BNT-BT0.08 films, combining a high tunability under low applied voltages indicate a wide integration potential for tunable devices in the microwave domain and particularly at 2.45 GHz, corresponding to the widely used industrial, scientific, and medical frequency band.

New Ultra-Low Permittivity Composites for Use in Ceramic Packaging of Ga:As Integrated Circuits

DTIC Science & Technology

1986-08-11

200 400 600 800 1000 SOAK TEMPERATURE (-C) Figure 8. Effect of leaching and heat treatment on relative permittivity of porous vycor glass. measured by...thermal treatment in strength, shrinkage and dielectric properties. 22 -𔃼 The feasibility of tape casting calcium aluminate cement into thin substrates...materials. (3) Vibro-compaction and calandering of cements containing microspheres. (4) Heat treatment of the polymer-containing materials. 23 V

Method and system for making integrated solid-state fire-sets and detonators

DOEpatents

O`Brien, D.W.; Druce, R.L.; Johnson, G.W.; Vogtlin, G.E.; Barbee, T.W. Jr.; Lee, R.S.

1998-03-24

A slapper detonator comprises a solid-state high-voltage capacitor, a low-jitter dielectric breakdown switch and trigger circuitry, a detonator transmission line, an exploding foil bridge, and a flier material. All these components are fabricated in a single solid-state device using thin film deposition techniques. 13 figs.

Chalcogenide glass-on-graphene photonics

NASA Astrophysics Data System (ADS)

Lin, Hongtao; Song, Yi; Huang, Yizhong; Kita, Derek; Deckoff-Jones, Skylar; Wang, Kaiqi; Li, Lan; Li, Junying; Zheng, Hanyu; Luo, Zhengqian; Wang, Haozhe; Novak, Spencer; Yadav, Anupama; Huang, Chung-Che; Shiue, Ren-Jye; Englund, Dirk; Gu, Tian; Hewak, Daniel; Richardson, Kathleen; Kong, Jing; Hu, Juejun

2017-12-01

Two-dimensional (2D) materials are of tremendous interest to integrated photonics, given their singular optical characteristics spanning light emission, modulation, saturable absorption and nonlinear optics. To harness their optical properties, these atomically thin materials are usually attached onto prefabricated devices via a transfer process. Here, we present a new route for 2D material integration with planar photonics. Central to this approach is the use of chalcogenide glass, a multifunctional material that can be directly deposited and patterned on a wide variety of 2D materials and can simultaneously function as the light-guiding medium, a gate dielectric and a passivation layer for 2D materials. Besides achieving improved fabrication yield and throughput compared with the traditional transfer process, our technique also enables unconventional multilayer device geometries optimally designed for enhancing light-matter interactions in the 2D layers. Capitalizing on this facile integration method, we demonstrate a series of high-performance glass-on-graphene devices including ultra-broadband on-chip polarizers, energy-efficient thermo-optic switches, as well as graphene-based mid-infrared waveguide-integrated photodetectors and modulators.

Dielectric properties of agricultural materials and their application

USDA-ARS?s Scientific Manuscript database

This book is prepared as a comprehensive source of information on dielectric properties of agricultural materials for scientific researchers and engineers involved in practical application of radio-frequency and microwave energy for potential problem solutions. Dielectric properties of materials det...

Stand-off transmission lines and method for making same

DOEpatents

Tuckerman, D.B.

1991-05-21

Standoff transmission lines in an integrated circuit structure are formed by etching away or removing the portion of the dielectric layer separating the microstrip metal lines and the ground plane from the regions that are not under the lines. The microstrip lines can be fabricated by a subtractive process of etching a metal layer, an additive process of direct laser writing fine lines followed by plating up the lines or a subtractive/additive process in which a trench is etched over a nucleation layer and the wire is electrolytically deposited. Microstrip lines supported on freestanding posts of dielectric material surrounded by air gaps are produced. The average dielectric constant between the lines and ground plane is reduced, resulting in higher characteristic impedance, less crosstalk between lines, increased signal propagation velocities, and reduced wafer stress. 16 figures.

Influence of the solid dielectric over the electric field from the ozone cell gap with double dielectric barrier

NASA Astrophysics Data System (ADS)

Ganea, I.

2017-05-01

The distilled water has the advantage of high value dielectric constant (ε = 81) in relation to ceramic glass materials, currently used for constructing the dielectric barrier. It was necessary to build a thin-walled enclosure of solid insulating material that contain distilled water to achieve a dielectric barrier. This was necessary to avoid exposing the liquid to the direct action of ozone. Dielectric permittivity of the solid dielectric material and the thickness of these walls have diminished the value of the electric field form the gaseous gap of the ozone cell compared to the case with the dielectric barrier from distilled water. The author of this work deduced theoretical relationships that express the values of the electric field intensity in the gap of the cell with two dielectrics and compared them with similar relationships of the intensity of the electric field from the gap of the ozone cell with one dielectric. In this work the author presenting experimental results which confirm the theoretical deducting regarding the use of the solid dielectric as enclosure for the liquid dielectric.

Band structure engineering of 2D materials using patterned dielectric superlattices.

PubMed

Forsythe, Carlos; Zhou, Xiaodong; Watanabe, Kenji; Taniguchi, Takashi; Pasupathy, Abhay; Moon, Pilkyung; Koshino, Mikito; Kim, Philip; Dean, Cory R

2018-05-07

The ability to manipulate electrons in two-dimensional materials with external electric fields provides a route to synthetic band engineering. By imposing artificially designed and spatially periodic superlattice potentials, electronic properties can be further altered beyond the constraints of naturally occurring atomic crystals 1-5 . Here, we report a new approach to fabricate high-mobility superlattice devices by integrating surface dielectric patterning with atomically thin van der Waals materials. By separating the device assembly and superlattice fabrication processes, we address the intractable trade-off between device processing and mobility degradation that constrains superlattice engineering in conventional systems. The improved electrostatics of atomically thin materials allows smaller wavelength superlattice patterns relative to previous demonstrations. Moreover, we observe the formation of replica Dirac cones in ballistic graphene devices with sub-40 nm wavelength superlattices and report fractal Hofstadter spectra 6-8 under large magnetic fields from superlattices with designed lattice symmetries that differ from that of the host crystal. Our results establish a robust and versatile technique for band structure engineering of graphene and related van der Waals materials with dynamic tunability.

Conformal Coating of a Phase Change Material on Ordered Plasmonic Nanorod Arrays for Broadband All-Optical Switching.

PubMed

Guo, Peijun; Weimer, Matthew S; Emery, Jonathan D; Diroll, Benjamin T; Chen, Xinqi; Hock, Adam S; Chang, Robert P H; Martinson, Alex B F; Schaller, Richard D

2017-01-24

Actively tunable optical transmission through artificial metamaterials holds great promise for next-generation nanophotonic devices and metasurfaces. Plasmonic nanostructures and phase change materials have been extensively studied to this end due to their respective strong interactions with light and tunable dielectric constants under external stimuli. Seamlessly integrating plasmonic components with phase change materials, as demonstrated in the present work, can facilitate phase change by plasmonically enabled light confinement and meanwhile make use of the high sensitivity of plasmon resonances to the variation of dielectric constant associated with the phase change. The hybrid platform here is composed of plasmonic indium-tin-oxide nanorod arrays (ITO-NRAs) conformally coated with an ultrathin layer of a prototypical phase change material, vanadium dioxide (VO 2 ), which enables all-optical modulation of the infrared as well as the visible spectral ranges. The interplay between the intrinsic plasmonic nonlinearity of ITO-NRAs and the phase transition induced permittivity change of VO 2 gives rise to spectral and temporal responses that cannot be achieved with individual material components alone.

Fiber-reinforced dielectric elastomer laminates with integrated function of actuating and sensing

NASA Astrophysics Data System (ADS)

Li, Tiefeng; Xie, Yuhan; Li, Chi; Yang, Xuxu; Jin, Yongbin; Liu, Junjie; Huang, Xiaoqiang

2015-04-01

The natural limbs of animals and insects integrate muscles, skins and neurons, providing both the actuating and sensing functions simultaneously. Inspired by the natural structure, we present a novel structure with integrated function of actuating and sensing with dielectric elastomer (DE) laminates. The structure can deform when subjected to high voltage loading and generate corresponding output signal in return. We investigate the basic physical phenomenon of dielectric elastomer experimentally. It is noted that when applying high voltage, the actuating dielectric elastomer membrane deforms and the sensing dielectric elastomer membrane changes the capacitance in return. Based on the concept, finite element method (FEM) simulation has been conducted to further investigate the electromechanical behavior of the structure.

Heterogeneously integrated microsystem-on-a-chip

DOEpatents

Chanchani, Rajen [Albuquerque, NM

2008-02-26

A microsystem-on-a-chip comprises a bottom wafer of normal thickness and a series of thinned wafers can be stacked on the bottom wafer, glued and electrically interconnected. The interconnection layer comprises a compliant dielectric material, an interconnect structure, and can include embedded passives. The stacked wafer technology provides a heterogeneously integrated, ultra-miniaturized, higher performing, robust and cost-effective microsystem package. The highly integrated microsystem package, comprising electronics, sensors, optics, and MEMS, can be miniaturized both in volume and footprint to the size of a bottle-cap or less.

Multiple electrical phase transitions in Al substituted barium hexaferrite

NASA Astrophysics Data System (ADS)

Kumar, Sunil; Supriya, Sweety; Kar, Manoranjan

2017-12-01

Barium hexaferrite is known to be a very good ferromagnetic material. However, it shows very good dielectric properties, i.e., the dielectric constant is comparable to that of the ferroelectric material. However, its crystal symmetry does not allow it to be a ferroelectric material. Hence, the electrical properties have revived the considerable research interest on these materials, not only for academic interest, but also for technological applications. There are a few reports on temperature dependent dielectric behavior of these materials. However, the exact cause of dielectric as well as electrical conductivity is yet to be established. Hence, Al (very good conducting material) substituted barium hexaferrite (BaFe12-xAlxO19, x = 0.0-4.0) has been prepared by following the modified sol-gel method to understand the ac and DC electrical properties of these materials. The crystal structure and parameters have been studied by employing the XRD and FTIR techniques. There are two transition temperatures, which have been observed in the temperature dependent ac dielectric and DC resistivity measurement. The response of dielectric behaviors to temperature is similar to that of the ferroelectric material; however, the dielectric polarization is due to the polaron hopping, which is evident from the DC resistivity analysis. Hence, the present observations lead to understand the electrical properties of barium hexaferrite. The frequency dependent dielectric dispersion can be understood by the modified Debye model. More interestingly, the dielectric constant decreases and DC resistivity increases with the increase in the Al concentration, which has the correlation between bond length modifications in the crystal due to substitution.

Negative Dielectric Constant Material Based on Ion Conducting Materials

NASA Technical Reports Server (NTRS)

Gordon, Keith L. (Inventor); Kang, Jin Ho (Inventor); Park, Cheol (Inventor); Lillehei, Peter T. (Inventor); Harrison, Joycelyn S. (Inventor)

2017-01-01

Metamaterials or artificial negative index materials (NIMs) have generated great attention due to their unique and exotic electromagnetic properties. One exemplary negative dielectric constant material, which is an essential key for creating the NIMs, was developed by doping ions into a polymer, a protonated poly (benzimidazole) (PBI). The doped PBI showed a negative dielectric constant at megahertz (MHz) frequencies due to its reduced plasma frequency and an induction effect. The magnitude of the negative dielectric constant and the resonance frequency were tunable by doping concentration. The highly doped PBI showed larger absolute magnitude of negative dielectric constant at just above its resonance frequency than the less doped PBI.

Negative Dielectric Constant Material Based on Ion Conducting Materials

NASA Technical Reports Server (NTRS)

Gordon, Keith L. (Inventor); Kang, Jin Ho (Inventor); Harrison, Joycelyn S. (Inventor); Park, Cheol (Inventor); Lillehei, Peter T. (Inventor)

2014-01-01

Metamaterials or artificial negative index materials (NIMs) have generated great attention due to their unique and exotic electromagnetic properties. One exemplary negative dielectric constant material, which is an essential key for creating the NIMs, was developed by doping ions into a polymer, a protonated poly(benzimidazole) (PBI). The doped PBI showed a negative dielectric constant at megahertz (MHz) frequencies due to its reduced plasma frequency and an induction effect. The magnitude of the negative dielectric constant and the resonance frequency were tunable by doping concentration. The highly doped PBI showed larger absolute magnitude of negative dielectric constant at just above its resonance frequency than the less doped PBI.

Submillimeter and Far-Infrared Dielectric Properties of Thin Films

NASA Technical Reports Server (NTRS)

Cataldo, Giuseppe; Wollack, Edward J.

2016-01-01

The complex dielectric function enables the study of a material's refractive and absorptive properties and provides information on a material's potential for practical application. Commonly employed line shape profile functions from the literature are briefly surveyed and their suitability for representation of dielectric material properties are discussed. An analysis approach to derive a material's complex dielectric function from observed transmittance spectra in the far-infrared and submillimeter regimes is presented. The underlying model employed satisfies the requirements set by the Kramers-Kronig relations. The dielectric function parameters derived from this approach typically reproduce the observed transmittance spectra with an accuracy of less than 4%.

Wave attenuation and mode dispersion in a waveguide coated with lossy dielectric material

NASA Technical Reports Server (NTRS)

Lee, C. S.; Chuang, S. L.; Lee, S. W.; Lo, Y. T.

1984-01-01

The modal attenuation constants in a cylindrical waveguide coated with a lossy dielectric material are studied as functions of frequency, dielectric constant, and thickness of the dielectric layer. A dielectric material best suited for a large attenuation is suggested. Using Kirchhoff's approximation, the field attenuation in a coated waveguide which is illuminated by a normally incident plane wave is also studied. For a circular guide which has a diameter of two wavelengths and is coated with a thin lossy dielectric layer (omega sub r = 9.1 - j2.3, thickness = 3% of the radius), a 3 dB attenuation is achieved within 16 diameters.

Dyakonov surface waves at the interface between hexagonal-boron-nitride and isotropic material

NASA Astrophysics Data System (ADS)

Zhu, B.; Ren, G.; Gao, Y.; Wang, Q.; Wan, C.; Wang, J.; Jian, S.

2016-12-01

In this paper we analyze the propagation of Dyakonov surface waves (DSWs) at the interface between hexagonal-boron-nitride (h-BN) and isotropic dielectric material. Various properties of DSWs supported at the dielectric-elliptic and dielectric-hyperbolic types of interfaces have been theoretically investigated, including the real effective index, propagation length, the angular existence domain (AED) and the composition ratio of evanescent field components in an h-BN crystal and isotropic dielectric material, respectively. The analysis in this paper reveals that h-BN could be a promising anisotropic material to observe the propagation of DSWs and may have potential diverse applications, such as high sensitivity stress sensing or optical sensing of analytes infiltrating dielectric materials.

Dielectric property measurements in the Electromagnetic Properties Measurement Laboratory

NASA Technical Reports Server (NTRS)

Cravey, Robin L.; Tiemsin, Pacita I.; Bussell, Kerri; Dudley, Kenneth L.

1995-01-01

The capability to measure the dielectric properties of various materials has been developed in the Electromagnetic Properties Measurement Laboratory (EPML) of the Electromagnetics Research Branch (ERB). Two measurement techniques which have been implemented in the EPML to characterize materials are the dielectric probe and waveguide techniques. Several materials, including some for which the dielectric properties are well known, have been measured in an attempt to establish the capabilities of the EPML in determining dielectric properties. Brief descriptions of the two techniques are presented in this report, along with representative results obtained during these measurements.

The development of insulated electrocardiogram electrodes

NASA Technical Reports Server (NTRS)

Portnoy, W. M.; David, R. M.

1971-01-01

An integrated system was developed, consisting of an insulated electrode and an impedance transformer, which can be used for the acquisition of electrocardiographic data. The electrode consists of a thin layer of dielectric material deposited onto a silicon substrate. The impedance transformer is an operational amplifier used in the unity gain configuration. Both electrode and impedance transformer are contained in a plastic housing identical to that used with the NASA Apollo-type electrode. The lower cut off frequency of the electrode system is between 0.01 and 1.0 Hz, depending on the dielectric used and its thickness. Clinical quality electrocardiograms were obtained with these electrodes.

Development of Active Microwave Thermography for Structural Health Monitoring

NASA Astrophysics Data System (ADS)

Foudazi, Ali

Active Microwave Thermography (AMT) is an integrated nondestructive testing and evaluation (NDT&E) method that incorporates aspects of microwave NDT and thermography techniques. AMT uses a microwave excitation to generate heat and the surface thermal profile of the material or structure under test is subsequently measured using a thermal camera (or IR camera). Utilizing a microwave heat excitation provides advantages over traditional thermal excitations (heat lamps, etc.) including the potential for non-contact, selective and focused heating. During an AMT inspection, two heating mechanisms are possible, referred to as dielectric and induction heating. Dielectric heating occurs as a result of the interaction of microwave energy with lossy dielectric materials which results in dissipated microwave energy and a subsequent increase in temperature. Induction heating is a result of induced surface current on conductive materials with finite conductivity under microwave illumination and subsequently ohmic loss. Due to the unique properties of microwave signals including frequency of operation, power level, and polarization, as well as their interaction with different materials, AMT has strong potential for application in various industries including infrastructure, transportation, aerospace, etc. As such, this Dissertation explores the application of AMT to NDT&E needs in these important industries, including detection and evaluation of defects in single- or multi-layered fiber-reinforced polymer-strengthened cement-based materials, evaluation of steel fiber percentage and distributions in steel fiber reinforced structures, characterization of corrosion ratio on corroded reinforcing steel bars (rebar), and evaluation of covered surface cracks orientation and size in metal structures.

Prototype Development and Evaluation of Self-Cleaning Concentrated Solar Power Collectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mazumder, Malay K.; Horenstein, Mark N.; Joglekar, Nitin R.

The feasibility of integrating and retrofitting transparent electrodynamic screens (EDS) on the front surfaces of solar collectors was established as a means to provide active self-cleaning properties for parabolic trough and heliostat reflectors, solar panels, and Fresnel lenses. Prototype EDS-integrated solar collectors, including second-surface glass mirrors, metallized Acrylic-film mirrors, and dielectric mirrors, were produced and tested in environmental test chambers for removing the dust layer deposited on the front surface of the mirrors. The evaluation of the prototype EDS-integrated mirrors was conducted using dust and environmental conditions that simulate the field conditions of the Mojave Desert. Test results showed thatmore » the specular reflectivity of the mirrors could be maintained at over 90% over a wide range of dust loadings ranging from 0 to 10 g/m 2, with particle diameter varying from 1 to 50 μm. The measurement of specular reflectivity (SR) was performed using a D&S Reflectometer at wavelength 660 nm. A non-contact reflectometer was designed and constructed for rapid measurement of specular reflectivity at the same wavelength. The use of this new noncontact instrument allowed us to measure SR before and after EDS activation. Several EDS prototypes were constructed and evaluated with different electrode configurations, electrode materials, and encapsulating dielectric materials.« less

High dielectric hyperbranched polyaniline materials.

PubMed

Yan, X Z; Goodson, T

2006-08-03

New organic materials for the purpose of high speed capacitor applications are discussed. The effect of the microcrystalline size dependence of different polyaniline polymeric systems on the dielectric constant is investigated. Two different methods are described for the preparation of the polyaniline dielectric materials. By sonication polymerization, the prepared polyaniline with a suggested hyperbranched structure showed much larger microcrystalline domains in comparison to the conventional linear polyaniline. Investigations of the dielectric constant and capacitance at a relatively high frequency (>100 kHz) suggested that the system with the larger microcrystalline domains (hyperbranched) gives rise to a larger dielectric constant. The mechanism of the increased dielectric response at higher frequencies is investigated by EPR spectroscopy, and these results suggest that delocalized polarons may provide a way to enhance the dielectric response at high frequency.

Homogeneous/Inhomogeneous-Structured Dielectrics and their Energy-Storage Performances.

PubMed

Yao, Zhonghua; Song, Zhe; Hao, Hua; Yu, Zhiyong; Cao, Minghe; Zhang, Shujun; Lanagan, Michael T; Liu, Hanxing

2017-05-01

The demand for dielectric capacitors with higher energy-storage capability is increasing for power electronic devices due to the rapid development of electronic industry. Existing dielectrics for high-energy-storage capacitors and potential new capacitor technologies are reviewed toward realizing these goals. Various dielectric materials with desirable permittivity and dielectric breakdown strength potentially meeting the device requirements are discussed. However, some significant limitations for current dielectrics can be ascribed to their low permittivity, low breakdown strength, and high hysteresis loss, which will decrease their energy density and efficiency. Thus, the implementation of dielectric materials for high-energy-density applications requires the comprehensive understanding of both the materials design and processing. The optimization of high-energy-storage dielectrics will have far-reaching impacts on the sustainable energy and will be an important research topic in the near future. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Atomic-scale etching of hexagonal boron nitride for device integration based on two-dimensional materials.

PubMed

Park, Hamin; Shin, Gwang Hyuk; Lee, Khang June; Choi, Sung-Yool

2018-05-29

Hexagonal boron nitride (h-BN) is considered an ideal template for electronics based on two-dimensional (2D) materials, owing to its unique properties as a dielectric film. Most studies involving h-BN and its application to electronics have focused on its synthesis using techniques such as chemical vapor deposition, the electrical analysis of its surface state, and the evaluation of its performance. Meanwhile, processing techniques including etching methods have not been widely studied despite their necessity for device fabrication processes. In this study, we propose the atomic-scale etching of h-BN for integration into devices based on 2D materials, using Ar plasma at room temperature. A controllable etching rate, less than 1 nm min-1, was achieved and the low reactivity of the Ar plasma enabled the atomic-scale etching of h-BN down to a monolayer in this top-down approach. Based on the h-BN etching technique for achieving electrical contact with the underlying molybdenum disulfide (MoS2) layer of an h-BN/MoS2 heterostructure, a top-gate MoS2 field-effect transistor (FET) with h-BN gate dielectric was fabricated and characterized by high electrical performance based on the on/off current ratio and carrier mobility.

Negative Refraction in a Uniaxial Absorbent Dielectric Material

ERIC Educational Resources Information Center

Jen, Yi-Jun; Lakhtakia, Akhlesh; Yu, Ching-Wei; Lin, Chin-Te

2009-01-01

Refraction of light from an isotropic dielectric medium to an anisotropic dielectric material is a complicated phenomenon that can have several different characteristics not usually discussed in electromagnetics textbooks for undergraduate students. With a simple problem wherein the refracting material is uniaxial with its optic axis normal to the…

Nanocomposites for high-speed optical modulators and plasmonic thermal mid-infrared emitters

NASA Astrophysics Data System (ADS)

Demir, Veysi

Demand for high-speed optical modulators and narrow-bandwidth infrared thermal emitters for numerous applications continues to rise and new optical devices are needed to deal with massive data flows, processing powers, and fabrication costs. Conventional techniques are usually hindered by material limitations or electronic interconnects and advances in organic nanocomposite materials and their integration into photonic integrated circuits (PICs) have been acknowledged as a promising alternative to single crystal techniques. The work presented in this thesis uses plasmonic and magneto-optic effects towards the development of novel optical devices for harnessing light and generating high bandwidth signals (>40GHz) at room and cryogenic temperatures (4.2°K). Several publications have resulted from these efforts and are listed at the end of the abstract. In our first published research we developed a narrow-bandwidth mid-infrared thermal emitter using an Ag/dielectric/Ag thin film structure arranged in hexagonal planar lattice structures. PECVD produced nanoamorphous carbon (NAC) is used as a dielectric layer. Spectrally tunable (>2 mum) and narrow bandwidth (<0.5 mum) emission peaks in the range of 4-7 mum were demonstrated by decreasing the resistivity of NAC from 1012 and 109 O.cm with an MoSi2 dopant and increasing the emitter lattice constant from 4 to 7 mum. This technique offers excellent flexibility for developing cost-effective mid-IR sources as compared to costly fiber and quantum cascade lasers (QCLs). Next, the effect of temperature on the Verdet constant for cobalt-ferrite polymer nanocomposites was measured for a series of temperatures ranging from 40 to 200°K with a Faraday rotation polarimeter. No visual change was observed in the films during thermal cycling, and ˜4x improvement was achieved at 40°K. The results are promising and further analysis is merited at 4.2°K to assess the performance of this material for cryogenic magneto-optic modulators for supercomputers. Finally, the dielectric constant and loss tangent of MAPTMS sol-gel films were measured over a wide range of microwave frequencies. The test structures were prepared by spin-coating sol-gel films onto metallized glass substrates. The dielectric properties of the sol-gel were probed with several different sets of coplanar waveguides (CPWs) electroplated onto sol-gel films. The dielectric constant and loss-tangent of these films were determined to be ˜3.1 and 3 x 10-3 at 35GHz. These results are very promising indicating that sol-gels are viable cladding materials for high-speed electro-optic polymer modulators (>40GHz).

Solid State Technology Branch of NASA Lewis Research Center

NASA Technical Reports Server (NTRS)

1991-01-01

Reprints of one year's production of research publications (June 1990 to June 1991) are presented. These are organized into three major sections: microwave circuits, both hybrid and monolithic microwave integrated circuits (MMICs); materials and device work; and superconductivity. The included papers also cover more specific topics involving waveguides, phase array antennas, dielectrics, and high temperature superconductors.

Computational screening of organic polymer dielectrics for novel accelerator technologies

DOE PAGES

Pilania, Ghanshyam; Weis, Eric; Walker, Ethan M.; ...

2018-06-18

The use of infrared lasers to power accelerating dielectric structures is a developing area of research. Within this technology, the choice of the dielectric material forming the accelerating structures, such as the photonic band gap (PBG) structures, is dictated by a range of interrelated factors including their dielectric and optical properties, amenability to photo-polymerization, thermochemical stability and other target performance metrics of the particle accelerator. In this direction, electronic structure theory aided computational screening and design of dielectric materials can play a key role in identifying potential candidate materials with the targeted functionalities to guide experimental synthetic efforts. In anmore » attempt to systematically understand the role of chemistry in controlling the electronic structure and dielectric properties of organic polymeric materials, here we employ empirical screening and density functional theory (DFT) computations, as a part of our multi-step hierarchal screening strategy. Our DFT based analysis focused on the bandgap, dielectric permittivity, and frequency-dependent dielectric losses due to lattice absorption as key properties to down-select promising polymer motifs. In addition to the specific application of dielectric laser acceleration, the general methodology presented here is deemed to be valuable in the design of new insulators with an attractive combination of dielectric properties.« less

High-order integral equation methods for problems of scattering by bumps and cavities on half-planes.

PubMed

Pérez-Arancibia, Carlos; Bruno, Oscar P

2014-08-01

This paper presents high-order integral equation methods for the evaluation of electromagnetic wave scattering by dielectric bumps and dielectric cavities on perfectly conducting or dielectric half-planes. In detail, the algorithms introduced in this paper apply to eight classical scattering problems, namely, scattering by a dielectric bump on a perfectly conducting or a dielectric half-plane, and scattering by a filled, overfilled, or void dielectric cavity on a perfectly conducting or a dielectric half-plane. In all cases field representations based on single-layer potentials for appropriately chosen Green functions are used. The numerical far fields and near fields exhibit excellent convergence as discretizations are refined-even at and around points where singular fields and infinite currents exist.

Dielectric spectroscopy in agrophysics

NASA Astrophysics Data System (ADS)

Skierucha, W.; Wilczek, A.; Szypłowska, A.

2012-04-01

The paper presents scientific foundation and some examples of agrophysical applications of dielectric spectroscopy techniques. The aim of agrophysics is to apply physical methods and techniques for studies of materials and processes which occur in agriculture. Dielectric spectroscopy, which describes the dielectric properties of a sample as a function of frequency, may be successfully used for examinations of properties of various materials. Possible test materials may include agrophysical objects such as soil, fruit, vegetables, intermediate and final products of the food industry, grain, oils, etc. Dielectric spectroscopy techniques enable non-destructive and non-invasive measurements of the agricultural materials, therefore providing tools for rapid evaluation of their water content and quality. There is a limited number of research in the field of dielectric spectroscopy of agricultural objects, which is caused by the relatively high cost of the respective measurement equipment. With the fast development of modern technology, especially in high frequency applications, dielectric spectroscopy has great potential of expansion in agrophysics, both in cognitive and utilitarian aspects.

High-density carrier-accumulated and electrically stable oxide thin-film transistors from ion-gel gate dielectric

PubMed Central

Fujii, Mami N.; Ishikawa, Yasuaki; Miwa, Kazumoto; Okada, Hiromi; Uraoka, Yukiharu; Ono, Shimpei

2015-01-01

The use of indium–gallium–zinc oxide (IGZO) has paved the way for high-resolution uniform displays or integrated circuits with transparent and flexible devices. However, achieving highly reliable devices that use IGZO for low-temperature processes remains a technological challenge. We propose the use of IGZO thin-film transistors (TFTs) with an ionic-liquid gate dielectric in order to achieve high-density carrier-accumulated IGZO TFTs with high reliability, and we discuss a distinctive mechanism for the degradation of this organic–inorganic hybrid device under long-term electrical stress. Our results demonstrated that an ionic liquid or gel gate dielectric provides highly reliable and low-voltage operation with IGZO TFTs. Furthermore, high-density carrier accumulation helps improve the TFT characteristics and reliability, and it is highly relevant to the electronic phase control of oxide materials and the degradation mechanism for organic–inorganic hybrid devices. PMID:26677773

High-density carrier-accumulated and electrically stable oxide thin-film transistors from ion-gel gate dielectric.

PubMed

Fujii, Mami N; Ishikawa, Yasuaki; Miwa, Kazumoto; Okada, Hiromi; Uraoka, Yukiharu; Ono, Shimpei

2015-12-18

The use of indium-gallium-zinc oxide (IGZO) has paved the way for high-resolution uniform displays or integrated circuits with transparent and flexible devices. However, achieving highly reliable devices that use IGZO for low-temperature processes remains a technological challenge. We propose the use of IGZO thin-film transistors (TFTs) with an ionic-liquid gate dielectric in order to achieve high-density carrier-accumulated IGZO TFTs with high reliability, and we discuss a distinctive mechanism for the degradation of this organic-inorganic hybrid device under long-term electrical stress. Our results demonstrated that an ionic liquid or gel gate dielectric provides highly reliable and low-voltage operation with IGZO TFTs. Furthermore, high-density carrier accumulation helps improve the TFT characteristics and reliability, and it is highly relevant to the electronic phase control of oxide materials and the degradation mechanism for organic-inorganic hybrid devices.

Valley-contrasting physics in all-dielectric photonic crystals: Orbital angular momentum and topological propagation

NASA Astrophysics Data System (ADS)

Chen, Xiao-Dong; Zhao, Fu-Li; Chen, Min; Dong, Jian-Wen

2017-07-01

The valley has been exploited as a binary degree of freedom to realize valley-selective Hall transport and circular dichroism in two-dimensional layered materials, in which valley-contrasting physics is indispensable in making the valley index an information carrier. In this Rapid Communication, we reveal valley-contrasting physics in all-dielectric valley photonic crystals. The link between the angular momentum of light and the valley state is discussed, and unidirectional excitation of the valley chiral bulk state is realized by sources carrying orbital angular momentum with proper chirality. Characterized by the nonzero valley Chern number, valley-dependent edge states and the resultant broadband robust transport is found in such an all-dielectric system. Our work has potential in the orbital angular momentum assisted light manipulation and the discovery of valley-protected topological states in nanophotonics and on-chip integration.

InAs/GaAs quantum-dot intermixing: comparison of various dielectric encapsulants

NASA Astrophysics Data System (ADS)

Alhashim, Hala H.; Khan, Mohammed Zahed Mustafa; Majid, Mohammed A.; Ng, Tien K.; Ooi, Boon S.

2015-10-01

We report on the impurity-free vacancy-disordering effect in InAs/GaAs quantum-dot (QD) laser structure based on seven dielectric capping layers. Compared to the typical SiO2 and Si3N4 films, HfO2 and SrTiO3 dielectric layers showed superior enhancement and suppression of intermixing up to 725°C, respectively. A QD peak ground-state differential blue shift of >175 nm (>148 meV) is obtained for HfO2 capped sample. Likewise, investigation of TiO2, Al2O3, and ZnO capping films showed unusual characteristics, such as intermixing-control caps at low annealing temperature (650°C) and interdiffusion-promoting caps at high temperatures (≥675°C). We qualitatively compared the degree of intermixing induced by these films by extracting the rate of intermixing and the temperature for ground-state and excited-state convergences. Based on our systematic characterization, we established reference intermixing processes based on seven different dielectric encapsulation materials. The tailored wavelength emission of ˜1060-1200 nm at room temperature and improved optical quality exhibited from intermixed QDs would serve as key materials for eventual realization of low-cost, compact, and agile lasers. Applications include solid-state laser pumping, optical communications, gas sensing, biomedical imaging, green-yellow-orange coherent light generation, as well as addressing photonic integration via area-selective, and postgrowth bandgap engineering.

Inkjet 3D printing of UV and thermal cure silicone elastomers for dielectric elastomer actuators

NASA Astrophysics Data System (ADS)

McCoul, David; Rosset, Samuel; Schlatter, Samuel; Shea, Herbert

2017-12-01

Dielectric elastomer actuators (DEAs) are an attractive form of electromechanical transducer, possessing high energy densities, an efficient design, mechanical compliance, high speed, and noiseless operation. They have been incorporated into a wide variety of devices, such as microfluidic systems, cell bioreactors, tunable optics, haptic displays, and actuators for soft robotics. Fabrication of DEA devices is complex, and the majority are inefficiently made by hand. 3D printing offers an automated and flexible manufacturing alternative that can fabricate complex, multi-material, integrated devices consistently and in high resolution. We present a novel additive manufacturing approach to DEA devices in which five commercially available, thermal and UV-cure DEA silicone rubber materials have been 3D printed with a drop-on-demand, piezoelectric inkjet system. Using this process, 3D structures and high-quality silicone dielectric elastomer membranes as thin as 2 μm have been printed that exhibit mechanical and actuation performance at least as good as conventionally blade-cast membranes. Printed silicone membranes exhibited maximum tensile strains of up to 727%, and DEAs with printed silicone dielectrics were actuated up to 6.1% area strain at a breakdown strength of 84 V μm-1 and also up to 130 V μm-1 at 2.4% strain. This approach holds great potential to manufacture reliable, high-performance DEA devices with high throughput.

Integration of amorphous tantalum silicon nitride (TaSiN) films as diffusion barriers in a Cu/SiLK(TM) metallization scheme

NASA Astrophysics Data System (ADS)

Padiyar, Sumant Devdas

2003-09-01

Current and future performance requirements for high- speed integrated circuit (IC) devices have placed great emphasis on the introduction of novel materials, deposition techniques and improved metrology techniques. The introduction of copper interconnects and more currently low-k dielectric materials in IC fabrication are two such examples. This introduction necessitates research on the compatibility of these materials and process techniques with adjacent diffusion barrier materials. One candidate, which has attracted significant attention is tantalum-silicon-nitride (TaSiN) on account of its superior diffusion barrier performance and high recrystallization temperature1. The subject of this dissertation is an investigation of the integration compatibility and performance of TaSiN barrier layers with a low-k dielectric polymer (SiLK ®2). A plasma- enhanced chemical vapor deposition (PECVD) approach is taken for growth of TaSiN films in this work due to potential advantages in conformal film coverage compared to more conventional physical vapor deposition methods. A Design of Experiment (DOE) methodology was introduced for PECVD of TaSiN on SiLK to optimize film properties such as film composition, resistivity, growth rate and film roughness with respect to the predictors viz. substrate temperature, precursor gas flow and plasma power. The first pass study determined the response window for optimized TaSiN film composition, growth rate and low halide contamination and the compatibility of the process with an organic polymer substrate, i.e. SiLK. Second-pass studies were carried out to deposit ultra- thin (10nm) films on: (a)blanket SiLK to investigate the performance of TaSiN films against copper diffusion, and (b)patterned SiLK to evaluate step coverage and conformality. All TaSiN depositions were carried out on SiO2 substrates for baseline comparisons. A second purpose of the diffusion barrier in IC processing is to improve interfacial adhesion between the barrier and the adjacent dielectric material; especially important for an organic polymer like SiLK. Hence, a detailed study was undertaken to evaluate the interfacial adhesion of TaSiN with SiLK and SiO2 and study the dependence of the adhesion with the film composition. The results of diffusion barrier performance studies, conformality studies, and interfacial adhesion studies of TaSiN films are discussed in relation to the elemental compositions of the films. 1J. S. Reid, M. Nicolet, J. Appl. Phys. 79 (2) p. 1109 (1996). 2SiLK is a low-k dielectric candidate registered by Dow Chemical Company, MI.

Passive and active sol-gel materials and devices

NASA Astrophysics Data System (ADS)

Andrews, Mark P.; Najafi, S. Iraj

1997-07-01

This paper examines sol-gel materials for photonics in terms of partnerships with other material contenders for processing optical devices. The discussion in four sections identifies semiconductors, amorphous and crystalline inorganic dielectrics, and amorphous and crystalline organic dielectrics as strategic agents in the rapidly evolving area of materials and devices for data communications and telecommunications. With Zyss, we trace the hierarchical lineage that connects molecular hybridization (chemical functionality), through supramolecular hybridization (collective properties and responses), to functional hybridization (device and system level constructs). These three concepts thread their way through discussions of the roles sol-gel glasses might be anticipated to assume in a photonics marketplace. We assign a special place to glass integrated optics and show how high temperature consolidated sol-gel derived glasses fit into competitive glass fabrication technologies. Low temperature hybrid sol-gel glasses that combine attractive features of organic polymers and inorganic glasses are considered by drawing on examples of our own new processes for fabricating couplers, power splitters, waveguides and gratings by combining chemical synthesis and sol-gel processing with simple photomask techniques.

Agricultural wastes as a resource of raw materials for developing low-dielectric glass-ceramics

PubMed Central

Danewalia, Satwinder Singh; Sharma, Gaurav; Thakur, Samita; Singh, K.

2016-01-01

Agricultural waste ashes are used as resource materials to synthesize new glass and glass-ceramics. The as-prepared materials are characterized using various techniques for their structural and dielectric properties to check their suitability in microelectronic applications. Sugarcane leaves ash exhibits higher content of alkali metal oxides than rice husk ash, which reduces the melting point of the components due to eutectic reactions. The addition of sugarcane leaves ash in rice husk ash promotes the glass formation. Additionally, it prevents the cristobalite phase formation. These materials are inherently porous, which is responsible for low dielectric permittivity i.e. 9 to 40. The presence of less ordered augite phase enhances the dielectric permittivity as compared to cristobalite and tridymite phases. The present glass-ceramics exhibit lower losses than similar materials synthesized using conventional minerals. The dielectric permittivity is independent to a wide range of temperature and frequency. The glass-ceramics developed with adequately devitrified phases can be used in microelectronic devices and other dielectric applications. PMID:27087123

Low-Dimensional Nanomaterials and Molecular Dielectrics for Radiation-Hard Electronics

NASA Astrophysics Data System (ADS)

McMorrow, Julian

The electronic materials research driving Moore's law has provided several decades of increasingly powerful yet simultaneously miniaturized computer technologies. As we approach the physical and practical limits of what can be accomplished with silicon electronics, we look to new materials to drive innovation in future electronic applications. New materials paradigms require the development of understanding from first principles to the demonstration of applications that comes with mature technologies. Semiconducting single-walled carbon nanotubes (SWCNTs), single- and few-layer molybdenum disulfide (MoS2) and self-assembled nanodielectric (SAND) gate materials have all made significant impacts in the research field of unconventional electronic materials. The materials selection, interfaces between materials, processing steps to assemble them, and their interaction with their environment all have significant bearing on the operation of the overall device. Operating in harsh radiation environments, like those of satellites orbiting the Earth, present unique challenges to the functionality and reliability of electronic devices. Because the future of space-bound electronics is often informed by the technology of terrestrial devices, a proactive approach is adopted to identify and understand the radiation response of new materials systems as they emerge and develop. The work discussed here drives the innovation and development of multiple nanomaterial based electronic technologies while simultaneously exploring their relevant radiation response mechanisms. First, collaborative efforts result in the demonstration of a SWCNT-based circuit technology that is solution processed, large-area, and compatible with flexible substrates. The statistical characterization of SWCNT transistors enables the development of robust doping and encapsulation schemes, which make the SWCNT circuits stable, scalable, and low-power. These SWCNTs are then integrated into static random access memory (SRAM) cells, an accomplishment that illustrates the technological relevance of this work by implementing a highly utilized component of modern day computing. Next, these SRAM devices demonstrate functionality as true random number generators (TRNGs), which are critical components in cryptography and encryption. The randomness of these SWCNT TRNGs is verified by a suite of statistical tests. This achievement has implications for securing data and communication in future solution-processed, large-area, flexible electronics. The unprecedented integration achieved by the underlying SWCNT doping and encapsulation motivates the study of this technology in a radiation environment. Doing so results in an understanding of the fundamental charge trapping mechanisms responsible for the radiation response in this system. The integrated nature of these devices enables, for the first time, the observation of system-level effects in a SWCNT integrated circuit technology. This technology is found to be total ionizing dose-hard, a promising result for the adoption of SWCNTs in future space-bound applications. Compared to SWCNTs, the field of MoS2 electronics is relatively nascent. As a result, studies of radiation effects in MoS2 devices focus on the fundamental mechanisms at play in the materials system. Here, we reveal the critical role of atmospheric adsorbates in the radiation effects of MoS2 transistors by measuring their response to vacuum ultraviolet radiation. These results highlight the importance of controlling the atmosphere of MoS2 devices during irradiation. Furthermore, we make recommendations for radiation-hard MoS2-based devices in the future as the technology continues to mature. One such recommendation is the incorporation of specialized dielectrics with proven radiation hardness. To this end, we address the materials integration challenge of incorporating SAND gate dielectrics on arbitrary substrates. We explore a novel approach for preparing metal substrates for SAND deposition, supporting the SAND superlattice structure and its superlative electronic properties on a metal surface. This result is critical for conducting fundamental transport studies when integrating SAND with novel semiconductor materials, as well as enabling complex circuit integration and SAND on flexible substrates. Altogether, these works drive the integration of novel nanoelectronic materials for future electronics while providing an understanding of their varying radiation response mechanisms to enable their adoption in future space-bound applications.

Multi-functional metal-dielectric photonic structures

NASA Astrophysics Data System (ADS)

Smith, Kyle J.

In RF circuits and integrated photonics, it is important to effectively control an electromagnetic signal. This includes protecting of the network from high power and/or undesired signal flow, which is achieved with device functionalities such as isolation, circulation, switching, and limiting. In an attempt to develop light-weight, small-footprint, better protection devices, new designs have been sought utilizing materials that have been otherwise avoided due to some primary downside. For example, ferromagnetic metals like Iron and Cobalt, despite being powerful magnets, have been completely shunned for uses in nonreciprocal devices due to their overwhelming electric losses and high reflectivity. How could we utilize lossy materials in electromagnetic applications? In this thesis research, we design and fabricate metal-dielectric photonic structures in which metal can be highly transmissive, while the desired response (e.g., magneto-photonic response) is strongly enhanced. Moreover, the metal-dielectric structures can be designed to exhibit a sharp transition from the induced transmission to broadband opacity for oblique incidence and/or due to a tiny alteration of the photonic structure (e.g., because of nonlinearity). Thus, the photonic structures can be tailored to produce collimation and power-limiting effects. In the case of ferromagnetic metals, the metal-dielectric structure can be realized as an omnidirectional isolator passing radiation in a single direction and for a single frequency. The effectiveness of such structures will be verified in microwave measurements. Additionally, metal-dielectric structures including a nonlinear component will be shown to function as a reflective power limiter, thus providing a far superior alternative to absorptive, and often sacrificial, limiters.

Influence of Surrounding Dielectrics on the Data Retention Time of Doped Sb2Te Phase Change Material

NASA Astrophysics Data System (ADS)

Jedema, Friso; in `t Zandt, Micha; Wolters, Rob; Gravesteijn, Dirk

2011-02-01

The crystallization properties of as-deposited and laser written amorphous marks of doped Sb2Te phase change material are found to be only dependent on the top dielectric layer. A ZnS:SiO2 top dielectric layer yields a higher crystallization temperature and a larger crystal growth activation energy as compared to a SiO2 top dielectric layer, leading to superior data retention times at ambient temperatures. The observed correlation between the larger crystallization temperatures and larger crystal growth activation energies indicates that the viscosity of the phase change material in the amorphous state is dependent on the interfacial energy between the phase change material and the top dielectric layer.

Dielectric-Particle Injector For Processing Of Materials

NASA Technical Reports Server (NTRS)

Leung, Philip L.; Gabriel, Stephen B.

1992-01-01

Device generates electrically charged particles of solid, or droplets of liquid, fabricated from dielectric material and projects them electrostatically, possibly injecting them into electrostatic-levitation chamber for containerless processing. Dielectric-particle or -droplet injector charges dielectric particles or droplets on zinc plate with photo-electrons generated by ultraviolet illumination, then ejects charged particles or droplets electrostatically from plate.

Viking landing sites, remote-sensing observations, and physical properties of Martian surface materials

USGS Publications Warehouse

Moore, H.J.; Jakosky, B.M.

1989-01-01

Important problems that confront future scientific exploration of Mars include the physical properties of Martian surface materials and the geologic processes that formed the materials. The design of landing spacecraft, roving vehicles, and sampling devices and the selection of landing sites, vehicle traverses, and sample sites will be, in part, guided by the physical properties of the materials. Four materials occur in the sample fields of the Viking landers: (1) drift, (2) crusty to cloddy, (3) blocky, and (4) rock. The first three are soillike. Drift materials is weak, loose, and porous. We estimate that it has a dielectric constant near 2.4 and a thermal inertia near 1 ?? 10-3 to 3 ?? 10-3 (cal cm-2 sec 1 2 K-1) because of its low bulk density, fine grain size, and small cohesion. Crusty to cloddy material is expected to have a dielectric constant near 2.8 and a thermal inertia near 4 ?? 10-3 to 7 ?? 10-3 because of its moderate bulk density and cementation of grains. Blocky material should have a dielectric constant near 3.3 and a thermal inertia near 7 ?? 10-3 to 9 ?? 10-3 because of its moderate bulk density and cementation. Common basaltic rocks have dielectric constans near 8 and thermal inertias near 30 ?? 10-3 to 60 ?? 10-3. Comparisons of estimated dielectric constants and thermal inertias of the materials at the landing sites with those obtained remotely by Earth-based radars and Viking Orbiter thermal sensors suggest that the materials at the landing sites are good analogs for materials elsewhere on Mars. Correlation of remotely estimated dielectric constant and thermal inertias indicates two modal values for paired values of dielectric constants and thermal inertias near (A) 2 and 2 ?? 10-3 and (B) 3 and 6 ?? 10-3, respectively. These two modes are comparable to the dielectric constants and thermal inertias for drift and crusty to cloddy material, respectively. Dielectric constants and thermal inertias for blocky material are larger but conistent with values in the northern plains. Our interprertations are compatible with an aeolian origin for drift and similar materials elsewhere on Mars. The postulate that moderate dielectric constants and thermal inertias larger than 3 or 4 ?? 10-3 are produced by cementation of soillike materials is partly consistent with the data. The average dielectric constant and thermal inertia and their correlation with one another suggest that most of the surface of Mars should present few difficulties to future surface exploration, but some surfaces may present difficulties for spacecraft that are not suitably designed. ?? 1989.

Transforming guided waves with metamaterial waveguide cores

NASA Astrophysics Data System (ADS)

Viaene, S.; Ginis, V.; Danckaert, J.; Tassin, P.

2016-04-01

Metamaterials make use of subwavelength building blocks to enhance our control on the propagation of light. To determine the required material properties for a given functionality, i.e., a set of desired light flows inside a metamaterial device, metamaterial designs often rely on a geometrical design tool known as transformation optics. In recent years, applications in integrated photonics motivated several research groups to develop two-dimensional versions of transformation optics capable of routing surface waves along graphene-dielectric and metal-dielectric interfaces. Although guided electromagnetic waves are highly relevant to applications in integrated optics, no consistent transformation-optical framework has so far been developed for slab waveguides. Indeed, the conventional application of transformation optics to dielectric slab waveguides leads to bulky three-dimensional devices with metamaterial implementations both inside and outside of the waveguide's core. In this contribution, we develop a transformationoptical framework that still results in thin metamaterial waveguide devices consisting of a nonmagnetic metamaterial core of varying thickness [Phys. Rev. B 93.8, 085429 (2016)]. We numerically demonstrate the effectiveness and versatility of our equivalence relations with three crucial functionalities: a beam bender, a beam splitter and a conformal lens. Our devices perform well on a qualitative (comparison of fields) and quantitative (comparison of transmitted power) level compared to their bulky counterparts. As a result, the geometrical toolbox of transformation optics may lead to a plethora of integrated metamaterial devices to route guided waves along optical chips.

Exploratory studies of new avenues to achieve high electromechanical response and high dielectric constant in polymeric materials

NASA Astrophysics Data System (ADS)

Huang, Cheng

High performance soft electronic materials are key elements in advanced electronic devices for broad range applications including capacitors, actuators, artificial muscles and organs, smart materials and structures, microelectromechanical (MEMS) and microfluidic devices, acoustic devices and sensors. This thesis exploits new approaches to improve the electromechanical response and dielectric response of these materials. By making use of novel material phenomena such as large anisotropy in dipolar response in liquid crystals (LCs) and all-organic composites in which high dielectric constant organic solids and conductive polymers are either physically blended into or chemically grafted to a polymer matrix, we demonstrate that high dielectric constant and high electromechanical conversion efficiency comparable to that in ceramic materials can be achieved. Nano-composite approach can also be utilized to improve the performance of the electronic electroactive polymers (EAPs) and composites, for example, exchange coupling between the fillers and matrix with very large dielectric contrast can lead to significantly enhance the dielectric response as well as electromechanical response when the heterogeneity size of the composite is comparable to the exchange length. In addition to the dielectric composites, in which high dielectric constant fillers raise the dielectric constant of composites, conductive percolation can also lead to high dielectric constant in polymeric materials. An all-polymer percolative composite is introduced which exhibits very high dielectric constant (>7,000). The flexible all-polymer composites with a high dielectric constant make it possible to induce a high electromechanical response under a much reduced electric field in the field effect electroactive polymer (EAP) actuators (a strain of 2.65% with an elastic energy density of 0.18 J/cm3 can be achieved under a field of 16 V/mum). Agglomeration of the particles can also be effectively prevented by in situ preparation. High dielectric constant copper phthalocyanine oligomer and conductive polyaniline oligomer were successfully bonded to polyurethane backbone to form fully functionalized nano-phase polymers. Improvement of dispersibility of oligomers in polymer matrix makes the system self-organize the nanocomposites possessing oligomer nanophase (below 30nm) within the fully functionalized polymers. The resulting nanophase polymers significantly enhance the interface effect, which through the exchange coupling raises the dielectric response markedly above that expected from simple mixing rules for dielectric composites. Consequently, these nano-phase polymers offer a high dielectric constant (a dielectric constant near 1,000 at 20 Hz), improve the breakdown field and mechanical properties, and exhibit high electromechanical response. A longitudinal strain of more than -14% can be induced under a much reduced field, 23 V/mum, with an elastic energy density of higher than 1 J/cm3. The elastic modulus is as high as 100MPa, and a transverse strain is 7% under the same field. (Abstract shortened by UMI.)

Optically-programmable nonlinear photonic component for dielectric-loaded plasmonic circuitry.

PubMed

Krasavin, Alexey V; Randhawa, Sukanya; Bouillard, Jean-Sebastien; Renger, Jan; Quidant, Romain; Zayats, Anatoly V

2011-12-05

We demonstrate both experimentally and numerically a compact and efficient, optically tuneable plasmonic component utilizing a surface plasmon polariton ring resonator with nonlinearity based on trans-cis isomerization in a polymer material. We observe more than 3-fold change between high and low transmission states of the device at milliwatt control powers (∼100 W/cm² by intensity), with the performance limited by switching speed of the material. Such plasmonic components can be employed in optically programmable and reconfigurable integrated photonic circuitry.

Dielectric Characterization of a Nonlinear Optical Material

PubMed Central

Lunkenheimer, P.; Krohns, S.; Gemander, F.; Schmahl, W. W.; Loidl, A.

2014-01-01

Batisite was reported to be a nonlinear optical material showing second harmonic generation. Using dielectric spectroscopy and polarization measurements, we provide a thorough investigation of the dielectric and charge-transport properties of this material. Batisite shows the typical characteristics of a linear lossy dielectric. No evidence for ferro- or antiferroelectric polarization is found. As the second-harmonic generation observed in batisite points to a non-centrosymmetric structure, this material is piezoelectric, but most likely not ferroelectric. In addition, we found evidence for hopping charge transport of localized charge carriers and a relaxational process at low temperatures. PMID:25109553

Dielectric Elastomer Actuated Systems and Methods

NASA Technical Reports Server (NTRS)

Dubowsky, Steven (Inventor); Hafez, Moustapha (Inventor); Lichter, Matthew (Inventor); Weiss, Peter (Inventor); Wingert, Andreas (Inventor)

2008-01-01

The system of the present invention includes an actuator having at least two electrodes, an elastomeric dielectric film disposed between the two electrodes, and a frame attached to the elastomeric dielectric film. The frame provides a linear actuation force characteristic over a displacement range. The displacement range is preferably the stroke of the actuator. The displacement range can be about 5 mm and greater. Further, the frame can include a plurality of configurations, for example, at least a rigid members coupled to a flexible member wherein the frame provides an elastic restoring force. In preferred embodiments, the rigid member can be, but is not limited to, curved beams, parallel beams, rods and plates. In a preferred embodiment the actuator can further include a passive element disposed between two flexible members such as, for example, links to tune a stiffness characteristic of the actuator. The passive element can be a bi-stable element. Further, the actuator can include a plurality of layers of the elastomeric dielectric film integrated into the frame. The elastomeric film can be made of different materials such as, for example, acrylic, silicone and latex.

Metal clusters and nanoparticles in dielectric matrices: Formation and optical properties

NASA Astrophysics Data System (ADS)

Gladskikh, I. A.; Vartanyan, T. A.

2016-12-01

The optical properties of thin dielectric films with metal inclusions and their dependence on thermal and laser annealing are studied experimentally. Metal clusters (Ag, Au, and Cu) in dielectric materials (Al2O3 and SiO2) are obtained by simultaneous vacuum deposition of metal and dielectric on the surface of a corresponding dielectric substrate (sapphire and quartz). It is shown that, depending on the deposited dielectric material, on the weight ratio of deposited metal and dielectric, and on the subsequent thermal treatment, one can obtain different metal structures, from clusters with a small number of atoms to complex dendritic plasmonic structures.

Organic solar cells based on high dielectric constant materials: An approach to increase efficiency

NASA Astrophysics Data System (ADS)

Hamam, Khalil Jumah Tawfiq

The efficiency of organic solar cells still lags behind inorganic solar cells due to their low dielectric constant which results in a weakly screened columbic attraction between the photogenerated electron-hole system, therefore the probability of charge separating is low. Having an organic material with a high dielectric constant could be the solution to get separated charges or at least weakly bounded electron-hole pairs. Therefore, high dielectric constant materials have been investigated and studied by measuring modified metal-phthalocyanine (MePc) and polyaniline in pellets and thin films. The dielectric constant was investigated as a function of temperature and frequency in the range of 20Hz to1MHz. For MePc we found that the high dielectric constant was an extrinsic property due to water absorption and the formation of hydronuim ion allowed by the ionization of the functional groups such as sulphonated and carboxylic groups. The dielectric constant was high at low frequencies and decreasing as the frequency increase. Investigated materials were applied in fabricated bilayer heterojunction organic solar cells. The application of these materials in an organic solar cells show a significant stability under room conditions rather than improvement in their efficiency.

All-organic electrostrictive polymer composites with low driving electrical voltages for micro-fluidic pump applications

PubMed Central

Le, Minh Quyen; Capsal, Jean-Fabien; Galineau, Jérémy; Ganet, Florent; Yin, Xunqian; Yang, Mingchia (Dawn); Chateaux, Jean-François; Renaud, Louis; Malhaire, Christophe; Cottinet, Pierre-Jean; Liang, Richard

2015-01-01

This paper focuses on the improvement of a relaxor ferroelectric terpolymer, i.e., poly (vinylidene fluoride-trifluoroethylene-chlorofluoroethylene) [P(VDF-TrFE-CFE)], filled with a bis(2-ethylhexyl) phthalate (DEHP). The developed material gave rise to a significantly increased longitudinal electrostrictive strain, as well as an increased mechanical energy density under a relatively low electric field. These features were attributed to the considerably enhanced dielectric permittivity and a decreased Young modulus as a result of the introduction of only small DEHP plasticizer molecules. In addition, the plasticizer-filled terpolymer only exhibited a slight decrease of the dielectric breakdown strength, which was a great advantage with respect to the traditional polymer-based electrostrictive composites. More importantly, the approach proposed herein is promising for the future development and scale-up of new high-performance electrostrictive dielectrics under low applied electrical fields through modification simply by blending with a low-cost plasticizer. An experimental demonstration based on a flexible micro-fluidic application is described at the end of this paper, confirming the attractive characteristics of the proposed materials as well as the feasibility of integrating them as micro-actuators in small-scale devices. PMID:26139015

Voltage sensor and dielectric material

DOEpatents

Yakymyshyn, Christopher Paul; Yakymyshyn, Pamela Jane; Brubaker, Michael Allen

2006-10-17

A voltage sensor is described that consists of an arrangement of impedance elements. The sensor is optimized to provide an output ratio that is substantially immune to changes in voltage, temperature variations or aging. Also disclosed is a material with a large and stable dielectric constant. The dielectric constant can be tailored to vary with position or direction in the material.

Resonant dielectric metamaterials

DOEpatents

Loui, Hung; Carroll, James; Clem, Paul G; Sinclair, Michael B

2014-12-02

A resonant dielectric metamaterial comprises a first and a second set of dielectric scattering particles (e.g., spheres) having different permittivities arranged in a cubic array. The array can be an ordered or randomized array of particles. The resonant dielectric metamaterials are low-loss 3D isotropic materials with negative permittivity and permeability. Such isotropic double negative materials offer polarization and direction independent electromagnetic wave propagation.

New dielectric elastomers with improved properties for energy harvesting and actuation

NASA Astrophysics Data System (ADS)

Stiubianu, George; Bele, Adrian; Tugui, Codrin; Musteata, Valentina

2015-02-01

New materials with large value for dielectric constant were obtained by using siloxane and chemically modified lignin. The modified lignin does not act as a stiffening filler material for the siloxane but acts as bulk filler, preserving the softness and low value of Young's modulus specific for silicones. The measured values for dielectric constant compare positively with the ones for previously tested dielectric elastomers based on siloxane rubber or acrylic rubber loaded with ceramic nanoparticles. The new materials use the well-known silicone chemistry and lignin which is available worldwide in large amounts as a by-product of pulp and paper industry, making its manufacturing affordable. The prepared dielectric elastomers were tested for possible applications for wave, wind and kinetic body motion energy harvesting. Siloxane, lignin, dielectric

Synthesis and Characterization of High-Dielectric-Constant Nanographite-Polyurethane Composite

NASA Astrophysics Data System (ADS)

Mishra, Praveen; Bhat, Badekai Ramachandra; Bhattacharya, B.; Mehra, R. M.

2018-05-01

In the face of ever-growing demand for capacitors and energy storage devices, development of high-dielectric-constant materials is of paramount importance. Among various dielectric materials available, polymer dielectrics are preferred for their good processability. We report herein synthesis and characterization of nanographite-polyurethane composite with high dielectric constant. Nanographite showed good dispersibility in the polyurethane matrix. The thermosetting nature of polyurethane gives the composite the ability to withstand higher temperature without melting. The resultant composite was studied for its dielectric constant (ɛ) as a function of frequency. The composite exhibited logarithmic variation of ɛ from 3000 at 100 Hz to 225 at 60 kHz. The material also exhibited stable dissipation factor (tan δ) across the applied frequencies, suggesting its ability to resist current leakage.

Compton effect thermally activated depolarization dosimeter

DOEpatents

Moran, Paul R.

1978-01-01

A dosimetry technique for high-energy gamma radiation or X-radiation employs the Compton effect in conjunction with radiation-induced thermally activated depolarization phenomena. A dielectric material is disposed between two electrodes which are electrically short circuited to produce a dosimeter which is then exposed to the gamma or X radiation. The gamma or X-radiation impinging on the dosimeter interacts with the dielectric material directly or with the metal composing the electrode to produce Compton electrons which are emitted preferentially in the direction in which the radiation was traveling. A portion of these electrons becomes trapped in the dielectric material, consequently inducing a stable electrical polarization in the dielectric material. Subsequent heating of the exposed dosimeter to the point of onset of ionic conductivity with the electrodes still shorted through an ammeter causes the dielectric material to depolarize, and the depolarization signal so emitted can be measured and is proportional to the dose of radiation received by the dosimeter.

Joining Chemical Pressure and Epitaxial Strain to Yield Y-doped BiFeO3 Thin Films with High Dielectric Response

PubMed Central

Scarisoreanu, N. D.; Craciun, F.; Birjega, R.; Ion, V.; Teodorescu, V. S.; Ghica, C.; Negrea, R.; Dinescu, M.

2016-01-01

BiFeO3 is one of the most promising multiferroic materials but undergoes two major drawbacks: low dielectric susceptibility and high dielectric loss. Here we report high in-plane dielectric permittivity (ε’ ∼2500) and low dielectric loss (tan δ < 0.01) obtained on Bi0.95Y0.05FeO3 films epitaxially grown on SrTiO3 (001) by pulsed laser deposition. High resolution transmission electron microscopy and geometric phase analysis evidenced nanostripe domains with alternating compressive/tensile strain and slight lattice rotations. Nanoscale mixed phase/domain ensembles are commonly found in different complex materials with giant dielectric/electromechanical (ferroelectric/ relaxors) or magnetoresistance (manganites) response. Our work brings insight into the joined role of chemical pressure and epitaxial strain on the appearance of nanoscale stripe structure which creates conditions for easy reorientation and high dielectric response, and could be of more general relevance for the field of materials science where engineered materials with huge response to external stimuli are a highly priced target. PMID:27157090

High energy density capacitors for low cost applications

NASA Astrophysics Data System (ADS)

Iyore, Omokhodion David

Polyvinylidene fluoride (PVDF) and its copolymers with trifluoroethylene, hexafluoropropylene and chlorotrifluoroethylene are the most widely investigated ferroelectric polymers, due to their relatively high electromechanical properties and potential to achieve high energy density. [Bauer, 2010; Zhou et al., 2009] The research community has focused primarily on melt pressed or extruded films of PVDF-based polymers to obtain the highest performance with energy density up to 25 Jcm-3. [Zhou et al., 2009] Solution processing offers an inexpensive, low temperature alternative, which is also easily integrated with flexible electronics. This dissertation focuses on the fabrication of solution-based polyvinylidene fluoride-hexafluoropropylene metal-insulator-metal capacitors on flexible substrates using a photolithographic process. Capacitors were optimized for maximum energy density, high dielectric strength and low leakage current density. It is demonstrated that with the right choice of solvent, electrodes, spin-casting and annealing conditions, high energy density thin film capacitors can be fabricated repeatably and reproducibly. The high electric field dielectric constants were measured and the reliabilities of the polymer capacitors were also evaluated via time-zero breakdown and time-dependent breakdown techniques. Chapter 1 develops the motivation for this work and provides a theoretical overview of dielectric materials, polarization, leakage current and dielectric breakdown. Chapter 2 is a literature review of polymer-based high energy density dielectrics and covers ferroelectric polymers, highlighting PVDF and some of its derivatives. Chapter 3 summarizes some preliminary experimental work and presents materials and electrical characterization that support the rationale for materials selection and process development. Chapter 4 discusses the fabrication of solution-processed PVDF-HFP and modification of its properties by photo-crosslinking. It is followed by a comparison of the structural, chemical and electrical properties of the neat and crosslinked films. Chapter 5 investigates the reliability and lifetime of PVDF-HFP thin films via time-zero and time-dependent dielectric breakdown. A power law relationship between the breakdown strength and characteristic breakdown time was determined, allowing extrapolation of lifetime at a desired operating voltage. The dissertation concludes with a summary and project outlook in chapter 7.

Laser-driven interactions and resultant instabilities in materials with high dielectric constant

NASA Astrophysics Data System (ADS)

Rajpoot, Moolchandra; Dixit, Sanjay

2015-07-01

An analytical investigation of nonlinear interactions resulting in parametric amplification of acoustic wave is made by obtaining the dispersion relation using hydrodynamic model of inhomogeneous plasma by applying large static field at an arbitrary angle with the pump wave. The investigation shows that many early studies have neglected dependence of dielectric constant on deformation of materials but deformation of materials does infect depends on the dielectric constant of medium. Thus we have assumed to high dielectric material like BaTiO3 which resulted in substantially high growth rate of threshold electric field which opens a new dimension to study nonlinear interactions and instabilities.

The chemistry screening for ultra low-k dielectrics plasma etching

NASA Astrophysics Data System (ADS)

Zotovich, A.; Krishtab, M.; Lazzarino, F.; Baklanov, M. R.

2014-12-01

Nowadays, some of the important problems in microelectronics technological node scaling down are related to interconnect delay, dynamic power consumption and crosstalk. This compels introduction and integration of new materials with low dielectric permittivity (low-k materials) as insulator in interconnects. One of such materials under consideration for sub 10 nm technology node is a spin-coated organosilicate glass layer with ordered porosity (37-40%) and a k-value of 2.2 (OSG 2.2). High porosity leads to significant challenges during the integration and one of them is a material degradation during the plasma etching. The low-k samples have been etched in a CCP double frequency plasma chamber from TEL. Standard recipes developed for microporous materials with k<2.5 and based on mixture of C4F8 and CF4 with N2, O2 and Ar were found significantly damaging for high-porous ULK materials. The standard etch recipe was compared with oxygen free etch chemistries based on mixture CF4 with CH2F2 and Ar assuming that the presence of oxygen in the first recipe will have significant negative impact in high porous ULK materials. The film damage has been analyzed using FTIR spectroscopy and the k-value has been extracted by capacitance CV-measurements. There was indirectly shown that vacuum ultraviolet photons cause the main damage of low-k, whereas radicals and ions are not so harmful. Trench structures have been etched in low-k film and cross-SEM analysis with and without HF dipping has been performed to reveal patterning capability and visualize the sidewall damage and. The bottom roughness was analyzed by AFM.

Method of using sacrificial materials for fabricating internal cavities in laminated dielectric structures

DOEpatents

Peterson, Kenneth A [Albuquerque, NM

2009-02-24

A method of using sacrificial materials for fabricating internal cavities and channels in laminated dielectric structures, which can be used as dielectric substrates and package mounts for microelectronic and microfluidic devices. A sacrificial mandrel is placed in-between two or more sheets of a deformable dielectric material (e.g., unfired LTCC glass/ceramic dielectric), wherein the sacrificial mandrel is not inserted into a cutout made in any of the sheets. The stack of sheets is laminated together, which deforms the sheet or sheets around the sacrificial mandrel. After lamination, the mandrel is removed, (e.g., during LTCC burnout), thereby creating a hollow internal cavity in the monolithic ceramic structure.

Alkali resistant optical coatings for alkali lasers and methods of production thereof

DOEpatents

Soules, Thomas F; Beach, Raymond J; Mitchell, Scott C

2014-11-18

In one embodiment, a multilayer dielectric coating for use in an alkali laser includes two or more alternating layers of high and low refractive index materials, wherein an innermost layer includes a thicker, >500 nm, and dense, >97% of theoretical, layer of at least one of: alumina, zirconia, and hafnia for protecting subsequent layers of the two or more alternating layers of high and low index dielectric materials from alkali attack. In another embodiment, a method for forming an alkali resistant coating includes forming a first oxide material above a substrate and forming a second oxide material above the first oxide material to form a multilayer dielectric coating, wherein the second oxide material is on a side of the multilayer dielectric coating for contacting an alkali.

7 CFR 1755.900 - Abbreviations and Definitions.

Code of Federal Regulations, 2011 CFR

2011-01-01

... to §§ 1755.901 and 1755.902: (a) Abbreviations. (1) ADSSAll dielectric self-supporting; (2...) Dielectric cable means a cable which has neither metallic members nor other electrically conductive materials... means any fiber made of dielectric material that guides light. (24) Optical point discontinuities means...

7 CFR 1755.900 - Abbreviations and Definitions.

Code of Federal Regulations, 2010 CFR

2010-01-01

... to §§ 1755.901 and 1755.902: (a) Abbreviations. (1) ADSSAll dielectric self-supporting; (2...) Dielectric cable means a cable which has neither metallic members nor other electrically conductive materials... means any fiber made of dielectric material that guides light. (24) Optical point discontinuities means...

From organized high throughput data to phenomenological theory: The example of dielectric breakdown

NASA Astrophysics Data System (ADS)

Kim, Chiho; Pilania, Ghanshyam; Ramprasad, Rampi

Understanding the behavior (and failure) of dielectric insulators experiencing extreme electric fields is critical to the operation of present and emerging electrical and electronic devices. Despite its importance, the development of a predictive theory of dielectric breakdown has remained a challenge, owing to the complex multiscale nature of this process. Here, we focus on the intrinsic dielectric breakdown field of insulators--the theoretical limit of breakdown determined purely by the chemistry of the material, i.e., the elements the material is composed of, the atomic-level structure, and the bonding. Starting from a benchmark dataset (generated from laborious first principles computations) of the intrinsic dielectric breakdown field of a variety of model insulators, simple predictive phenomenological models of dielectric breakdown are distilled using advanced statistical or machine learning schemes, revealing key correlations and analytical relationships between the breakdown field and easily accessible material properties. The models are shown to be general, and can hence guide the screening and systematic identification of high electric field tolerant materials.

Method of forming nanodielectrics

DOEpatents

Tuncer, Enis [Knoxville, TN; Polyzos, Georgios [Oak Ridge, TN

2014-01-07

A method of making a nanoparticle filled dielectric material. The method includes mixing nanoparticle precursors with a polymer material and reacting the nanoparticle mixed with the polymer material to form nanoparticles dispersed within the polymer material to form a dielectric composite.

Cast dielectric composite linear accelerator

DOEpatents

Sanders, David M [Livermore, CA; Sampayan, Stephen [Manteca, CA; Slenes, Kirk [Albuquerque, NM; Stoller, H M [Albuquerque, NM

2009-11-10

A linear accelerator having cast dielectric composite layers integrally formed with conductor electrodes in a solventless fabrication process, with the cast dielectric composite preferably having a nanoparticle filler in an organic polymer such as a thermosetting resin. By incorporating this cast dielectric composite the dielectric constant of critical insulating layers of the transmission lines of the accelerator are increased while simultaneously maintaining high dielectric strengths for the accelerator.

Simultaneous Noncontact Precision Imaging of Microstructural and Thickness Variation in Dielectric Materials Using Terahertz Energy

NASA Technical Reports Server (NTRS)

Roth, Donald J (Inventor)

2011-01-01

A process for simultaneously measuring the velocity of terahertz electromagnetic radiation in a dielectric material sample without prior knowledge of the thickness of the sample and for measuring the thickness of a material sample using terahertz electromagnetic radiation in a material sample without prior knowledge of the velocity of the terahertz electromagnetic radiation in the sample is disclosed and claimed. The process evaluates, in a plurality of locations, the sample for microstructural variations and for thickness variations and maps the microstructural and thickness variations by location. A thin sheet of dielectric material may be used on top of the sample to create a dielectric mismatch. The approximate focal point of the radiation source (transceiver) is initially determined for good measurements.

Evidence for power-law frequency dependence of intrinsic dielectric response in the Ca Cu3 Ti4 O12

NASA Astrophysics Data System (ADS)

Tselev, Alexander; Brooks, Charles M.; Anlage, Steven M.; Zheng, Haimei; Salamanca-Riba, Lourdes; Ramesh, R.; Subramanian, M. A.

2004-10-01

We investigated the dielectric response of CaCu3Ti4O12 (CCTO) thin films grown epitaxially on LaAlO3 (001) substrates by pulsed laser deposition. The dielectric response of the films was found to be strongly dominated by a power law in frequency, typical of materials with localized hopping charge carriers, in contrast to the Debye-like response of the bulk material. The film conductivity decreases with annealing in oxygen, and it suggests that oxygen deficit is a cause of the relatively high film conductivity. With increase of the oxygen content, the room temperature frequency response of the CCTO thin films changes from the response indicating the presence of some relatively low conducting capacitive layers to purely power law, and then toward a frequency independent response with a relative dielectric constant ɛ'˜102 . The film conductance and dielectric response decrease upon decrease of the temperature, with dielectric response being dominated by the power-law frequency dependence. Below ˜80K , the dielectric response of the films is frequency independent with ɛ' close to 102 . The results provide another piece of evidence for an extrinsic, Maxwell-Wagner type, origin of the colossal dielectric response of the bulk CCTO material, connected with electrical inhomogeneity of the bulk material.

Measurement of the dielectric properties of sawdust between 0.5 and 15 GHz

USDA-ARS?s Scientific Manuscript database

Rapid, nondestructive, and subsurface sensing of material properties such as water content can be achieved through dielectric measurements. The interaction between the electromagnetic waves and the material is defined by the dielectric properties, which can be used to determine the physical properti...

Dielectric relaxation of high-k oxides

PubMed Central

2013-01-01

Frequency dispersion of high-k dielectrics was observed and classified into two parts: extrinsic cause and intrinsic cause. Frequency dependence of dielectric constant (dielectric relaxation), that is the intrinsic frequency dispersion, could not be characterized before considering the effects of extrinsic frequency dispersion. Several mathematical models were discussed to describe the dielectric relaxation of high-k dielectrics. For the physical mechanism, dielectric relaxation was found to be related to the degree of polarization, which depended on the structure of the high-k material. It was attributed to the enhancement of the correlations among polar nanodomain. The effect of grain size for the high-k materials' structure mainly originated from higher surface stress in smaller grain due to its higher concentration of grain boundary. PMID:24180696

Mid-infrared plasmonic resonances exploiting heavily-doped Ge on Si

NASA Astrophysics Data System (ADS)

Biagioni, P.; Sakat, E.; Baldassarre, L.; Calandrini, E.; Samarelli, A.; Gallacher, K.; Frigerio, J.; Isella, G.; Paul, D. J.; Ortolani, M.

2015-03-01

We address the behavior of mid-infrared localized plasmon resonances in elongated germanium antennas integrated on silicon substrates. Calculations based on Mie theory and on the experimentally retrieved dielectric constant allow us to study the tunability and the figures of merit of plasmon resonances in heavily-doped germanium and to preliminarily compare them with those of the most established plasmonic material, gold.

Characterization and metrology implications of the 1997 NTRS

NASA Astrophysics Data System (ADS)

Class, W.; Wortman, J. J.

1998-11-01

In the Front-end (transistor forming) area of silicon CMOS device processing, several NTRS difficult challenges have been identified including; scaled and alternate gate dielectric materials, new DRAM dielectric materials, alternate gate materials, elevated contact structures, engineered channels, and large-area cost-effective silicon substrates. This paper deals with some of the characterization and metrology challenges facing the industry if it is to meet the projected needs identified in the NTRS. In the areas of gate and DRAM dielectric, scaling requires that existing material layers be thinned to maximize capacitance. For the current gate dielectric, SiO2 and its nitrided derivatives, direct tunneling will limit scaling to approximately 1.5nm for logic applications before power losses become unacceptable. Low power logic and memory applications may limit scaling to the 2.0-2.2nm range. Beyond these limits, dielectric materials having higher dielectric constant, will permit continued capacitance increases while allowing for the use of thicker dielectric layers, where tunneling may be minimized. In the near term silicon nitride is a promising SiO2 substitute material while in the longer term "high-k" materials such as tantalum pentoxide and barium strontium titanate (BST) will be required. For these latter materials, it is likely that a multilayer dielectric stack will be needed, consisting of an ultra-thin (1-2 atom layer) interfacial SiO2 layer and a high-k overlayer. Silicon wafer surface preparation control, as well as the control of composition, crystal structure, and thickness for such stacks pose significant characterization and metrology challenges. In addition to the need for new gate dielectric materials, new gate materials will be required to overcome the limitations of the current doped polysilicon gate materials. Such a change has broad ramifications on device electrical performance and manufacturing process robustness which again implies a broad range of new characterization and metrology requirements. Finally, the doped structure of the MOS transistor must scale to very small lateral and depth dimensions, and thermal budgets must be reduced to permit the retention of very abrupt highly doped drain and channel engineered structures. Eventually, the NTRS forecasts the need for an elevated contact structure. Here, there are significant challenges associated with three-dimensional dopant profiling, measurement of dopant activity in ultra-shallow device regions, as well as point defect metrology and characterization.

Non-destructive evaluation method employing dielectric electrostatic ultrasonic transducers

NASA Technical Reports Server (NTRS)

Yost, William T. (Inventor); Cantrell, Jr., John H. (Inventor)

2003-01-01

An acoustic nonlinearity parameter (.beta.) measurement method and system for Non-Destructive Evaluation (NDE) of materials and structural members novelly employs a loosely mounted dielectric electrostatic ultrasonic transducer (DEUT) to receive and convert ultrasonic energy into an electrical signal which can be analyzed to determine the .beta. of the test material. The dielectric material is ferroelectric with a high dielectric constant .di-elect cons.. A computer-controlled measurement system coupled to the DEUT contains an excitation signal generator section and a measurement and analysis section. As a result, the DEUT measures the absolute particle displacement amplitudes in test material, leading to derivation of the nonlinearity parameter (.beta.) without the costly, low field reliability methods of the prior art.

Millimeter wave and terahertz dielectric properties of biological materials

NASA Astrophysics Data System (ADS)

Khan, Usman Ansar

Broadband dielectric properties of materials can be employed to identify, detect, and characterize materials through their unique spectral signatures. In this study, millimeter wave, submillimeter wave, and terahertz dielectric properties of biological substances inclusive of liquids, solids, and powders were obtained using Dispersive Fourier Transform Spectroscopy (DFTS). Two broadband polarizing interferometers were constructed to test materials from 60 GHz to 1.2 THz. This is an extremely difficult portion of the frequency spectrum to obtain a material's dielectric properties since neither optical nor microwave-based techniques provide accurate data. The dielectric characteristics of liquids such as cyclohexane, chlorobenzene, benzene, ethanol, methanol, 1,4 dioxane, and 10% formalin were obtained using the liquid interferometer. Subsequently the solid interferometer was utilized to determine the dielectric properties of human breast tissues, which are fixed and preserved in 10% formalin. This joint collaboration with the Tufts New England Medical Center demonstrated a significant difference between the dielectric response of tumorous and non-tumorous breast tissues across the spectrum. Powders such as anthrax, flour, talc, corn starch, dry milk, and baking soda have been involved in a number of security threats and false alarms around the globe in the last decade. To be able to differentiate hoax attacks and serious security threats, the dielectric properties of common household powders were also examined using the solid interferometer to identify the powders' unique resonance peaks. A new sample preparation kit was designed to test the powder specimens. It was anticipated that millimeter wave and terahertz dielectric characterization will enable one to clearly distinguish one powder from the other; however most of the powders had relatively close dielectric responses and only Talc had a resonance signature recorded at 1.135 THz. Furthermore, due to polarization and birefringence effects, it was determined that one can not utilize the dielectric properties of powder-containing packages to differentiate hoax attacks and serious security threats.

Dielectric properties for prediction of moisture content in Vidalia onions

USDA-ARS?s Scientific Manuscript database

Microwave Sensing provides a means for nondestructively determining the amount of moisture in materials by sensing the dielectric properties of the material. In this study, dielectric properties of Vidalia onions were analyzed for moisture dependence at 13.36 GHz and 23°C for moisture content betwee...

Dielectric Loss Measurements on Raw Materials.

ERIC Educational Resources Information Center

Mwanje, J.

1980-01-01

Describes an experiment used to study dielectric properties of materials. Values of the dielectric loss tangent can be determined at low frequencies from Lissajous figures formed on an oscilloscope. Some mineral rock specimens show Debye-type relaxation peaks at frequencies in the region of 1 to 500 Hz. (Author/DS)

Micro-scale heat-exchangers for Joule-Thomson cooling.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gross, Andrew John

2014-01-01

This project focused on developing a micro-scale counter flow heat exchangers for Joule-Thomson cooling with the potential for both chip and wafer scale integration. This project is differentiated from previous work by focusing on planar, thin film micromachining instead of bulk materials. A process will be developed for fabricating all the devices mentioned above, allowing for highly integrated micro heat exchangers. The use of thin film dielectrics provides thermal isolation, increasing efficiency of the coolers compared to designs based on bulk materials, and it will allow for wafer-scale fabrication and integration. The process is intended to implement a CFHX asmore » part of a Joule-Thomson cooling system for applications with heat loads less than 1mW. This report presents simulation results and investigation of a fabrication process for such devices.« less

Poly(vinyl acetate)/clay nanocomposite materials for organic thin film transistor application.

PubMed

Park, B J; Sung, J H; Park, J H; Choi, J S; Choi, H J

2008-05-01

Nanocomposite materials of poly(vinyl acetate) (PVAc) and organoclay were fabricated, in order to be utilized as dielectric materials of the organic thin film transistor (OTFT). Spin coating condition of the nanocomposite solution was examined considering shear viscosity of the composite materials dissolved in chloroform. Intercalated structure of the PVAc/clay nanocomposites was characterized using both wide-angle X-ray diffraction and TEM. Fracture morphology of the composite film on silicon wafer was also observed by SEM. Dielectric constant (4.15) of the nanocomposite materials shows that the PVAc/clay nanocomposites are applicable for the gate dielectric materials.

Dielectric Characteristics of Microstructural Changes and Property Evolution in Engineered Materials

NASA Astrophysics Data System (ADS)

Clifford, Jallisa Janet

Heterogeneous materials are increasingly used in a wide range of applications such as aerospace, civil infrastructure, fuel cells and many others. The ability to take properties from two or more materials to create a material with properties engineered to needs is always very attractive. Hence heterogeneous materials are evolving into more complex formulations in multiple disciplines. Design of microstructure at multiple scales control the global functional properties of these materials and their structures. However, local microstructural changes do not directly cause a proportional change to the global properties (such as strength and stiffness). Instead, local changes follow an evolution process including significant interactions. Therefore, in order to understand property evolution of engineered materials, microstructural changes need to be effectively captured. Characterizing these changes and representing them by material variables will enable us to further improve our material level understanding. In this work, we will demonstrate how microstructural features of heterogeneous materials can be described quantitatively using broadband dielectric spectroscopy (BbDS). The frequency dependent dielectric properties can capture the change in material microstructure and represent these changes in terms of material variables, such as complex permittivity. These changes in terms of material properties can then be linked to a number of different conditions, such as increasing damage due to impact or fatigue. Two different broadband dielectric spectroscopy scanning modes are presented: bulk measurements and continuous scanning to measure dielectric property change as a function of position across the specimen. In this study, we will focus on ceramic materials and fiber reinforced polymer matrix composites as test bed material systems. In the first part of the thesis, we will present how different micro-structural design of porous ceramic materials can be captured quantitatively using BbDS. These materials are typically used in solid oxide fuel cells (SOFC). Results show significant effect of microstructural design on material properties at multiple temperatures (up to 800 °C). In the later part of the thesis, we will focus on microstructural changes of fiber reinforced composite materials due to impact and static loading. The changes in dielectric response can then be linked to the bulk mechanical properties of the material and various damage modes. Observing trends in dielectric response enables us to further determine local mechanisms and distribution of properties throughout the damaged specimens. A 3D X-ray microscope and a digital microscope have been used to visualize these changes in material microstructure and validate experimental observations. The increase in damage observed in the material microstructure can then also be linked to the changes in dielectric response. Results show that BbDS is an extremely useful tool for identifying microstructural changes within a heterogeneous material and particularly useful in relating remaining properties. Dielectric material variables can be used directly in property degradation laws and help develop a framework for future predictive modeling methodologies.

A novel barium strontium titanate/nickel/titanium nitride/silicon structure for gigabit-scale DRAM capacitors

NASA Astrophysics Data System (ADS)

Ritums, Dwight Lenards

A materials system has been developed for advanced oxide high permittivity capacitors for use in Dynamic Random Access Memory (DRAM) applications. A capacitor test structure has been fabricated, demonstrating the integration of this materials system onto Si. It is a 3-D stacked electrode structure which uses the high-K dielectric material Ba1- xSrxTiO 3 (BST) and a novel Ni/TiN bottom electrode system. The structure was grown using pulsed laser deposition (PLD), photo-assisted metal-organic chemical vapor deposition (PhA-MOCVD), and electron beam deposition, and resulted in thin film capacitors with dielectric constants over 500. Other advanced oxides, principally SrVO3, were also investigated for use as electrode materials. The fabricated test structure is 3 μgm wide and 1 μm thick. RIE was used to generate the 3-D structure, and an etch gas recipe was developed to pattern the 3-D electrode structure onto the TiN. The Ni was deposited by electron beam deposition, and the BST was grown by PLD and PhA-MOCVD. Conformal coating of the electrode by the BST was achieved. The film structure was analyzed with XRD, SEM, EDS, XPS, AES, and AFM, and the electronic properties of the devices were characterized. Permittivites of up to 500 were seen in the PLD-grown films, and values up to 700 were seen in the MOCVD- deposited films. The proof of concept of a high permittivity material directly integrated onto Si has been demonstrated for this capacitor materials system. With further lithographic developments, this system can be applied toward gigabit device fabrication.

Origin of colossal dielectric response in (In + Nb) co-doped TiO2 rutile ceramics: a potential electrothermal material.

PubMed

Ke, Shanming; Li, Tao; Ye, Mao; Lin, Peng; Yuan, Wenxiang; Zeng, Xierong; Chen, Lang; Huang, Haitao

2017-08-31

(In + Nb) co-doped TiO 2 (TINO) rutile is an emerging material with a colossal dielectric permittivity (CP) and a low dielectric loss over wide temperature and frequency ranges. The electrical inhomogeneous nature of TINO ceramics is demonstrated by direct local current probing with high-resolution conductive atomic force microscopy (cAFM). The CP response in TINO is found to originate from the electron-pinned defect dipole induced conductive cluster effect and the electrode effect. Two types of dielectric relaxations are simultaneously observed due to these two effects. With the given synthesis condition, we found TINO shows a highly leaky feature that impairs its application as a dielectric material. However, the fast-temperature-rising phenomenon found in this work may open a new door for TINO to be applied as a potential electrothermal material with high efficiency, oxidation-proof, high temperature stability, and energy saving.

Combinatorial Investigation of ZrO2-Based Dielectric Materials for Dynamic Random-Access Memory Capacitors

NASA Astrophysics Data System (ADS)

Kiyota, Yuji; Itaka, Kenji; Iwashita, Yuta; Adachi, Tetsuya; Chikyow, Toyohiro; Ogura, Atsushi

2011-06-01

We investigated zirconia (ZrO2)-based material libraries in search of new dielectric materials for dynamic random-access memory (DRAM) by combinatorial-pulsed laser deposition (combi-PLD). We found that the substitution of yttrium (Y) to Zr sites in the ZrO2 system suppressed the leakage current effectively. The metal-insulator-metal (MIM) capacitor property of this system showed a leakage current density of less than 5×10-7 A/cm2 and the dielectric constant was 20. Moreover, the addition of titanium (Ti) or tantalum (Ta) to this system caused the dielectric constant to increase to ˜25 within the allowed leakage level of 5×10-7 A/cm2. Therefore, Zr-Y-Ti-O and Zr-Y-Ta-O systems have good potentials for use as new materials with high dielectric constants of DRAM capacitors instead of silicon dioxides (SiO2).

An experimental setup for study direct charge battery based on Sr-90

NASA Astrophysics Data System (ADS)

Özkeçeci, S.; Koç, R.

2017-02-01

In this paper we present construction and analysis of nuclear micro battery driven by Strontium 90 (Sr-90). Our design based on charge deposition on the plates of a capacitor and polarization of dielectric materials between the plates. In the construction we have used liquid Sr-90 with activity 100 mCi in cylindrical ampoule coiled up by thin film graphene as one plate and Manganase dioxide (MnO2) as other plate of the capacitor. A dielectric material (paper) is inserted between the plates. The high energetic beta particles from the Sr-90 penetrate graphene to produce ionization and then electrons are removed from graphene to dielectric material. Electrons inside the dielectric material cause polarization of dipoles. Consequently the radiation from the isotope produces an external current. We discuss effect of beta particles on dielectrics and electrodes beside advantage and disadvantage of a battery of this type.

Controlled thermal expansion printed wiring boards based on liquid crystal polymer dielectrics

NASA Technical Reports Server (NTRS)

Knoll, Thomas E.; Blizard, Kent; Jayaraj, K.; Rubin, Leslie S.

1994-01-01

Dielectric materials based on innovative Liquid Crystal Polymers (LCP's) have been used to fabricate surface mount printed wiring boards (PWB's) with a coefficient of thermal expansion matched to leadless ceramic chip carriers. Proprietary and patented polymer processing technology has resulted in self reinforcing material with balanced in-plane mechanical properties. In addition, LCP's possess excellent electrical properties, including a low dielectric constant (less than 2.9) and very low moisture absorption (less than 0.02%). LCP-based multilayer boards processed with conventional drilling and plating processes show improved performance over other materials because they eliminate the surface flatness problems of glass or aramid reinforcements. Laser drilling of blind vias in the LCP dielectric provides a very high density for use in direct chip attach and area array packages. The material is ideally suited for MCM-L and PCMCIA applications fabricated with very thin dielectric layers of the liquid crystal polymer.

Nanoindentation investigation of HfO2 and Al2O3 films grown by atomic layer deposition

Treesearch

K. Tapily; Joseph E. Jakes; D. S. Stone; P. Shrestha; D. Gu; H. Baumgart; A. A. Elmustafa

2008-01-01

The challenges of reducing gate leakage current and dielectric breakdown beyond the 45 nm technology node have shifted engineers’ attention from the traditional and proven dielectric SiO2 to materials of higher dielectric constant also known as high-k materials such as hafnium oxide (HfO2) and aluminum oxide (Al2O3). These high-k materials are projected to...

Tailorable Dielectric Material with Complex Permittivity Characteristics

NASA Technical Reports Server (NTRS)

Smith, Joseph G. (Inventor); Watson, Kent A. (Inventor); Elliott, Holly A (Inventor); Delozier, Donavon Mark (Inventor); Connell, John W. (Inventor); Ghose, Sayata (Inventor); Dudley, Kenneth L. (Inventor)

2014-01-01

A dielectric material includes a network of nanosubstrates, such as but not limited to nanotubes, nanosheets, or other nanomaterials or nanostructures, a polymer base material or matrix, and nanoparticles constructed at least partially of an elemental metal. The network has a predetermined nanosubstrate loading percentage by weight with respect to a total weight of the dielectric material, and a preferential or predetermined longitudinal alignment with respect to an orientation of an incident electrical field. A method of forming the dielectric material includes depositing the metal-based nanoparticles onto the nanosubstrates and subsequently mixing these with a polymer matrix. Once mixed, alignment can be achieved by melt extrusion or a similar mechanical shearing process. Alignment of the nanosubstrate may be in horizontal or vertical direction with respect to the orientation of an incident electrical field.

Sono-photocatalytic production of hydrogen by interface modified metal oxide insulators.

PubMed

Senevirathne, Rushdi D; Abeykoon, Lahiru K; De Silva, Nuwan L; Yan, Chang-Feng; Bandara, Jayasundera

2018-07-01

Dielectric oxide materials are well-known insulators that have many applications in catalysis as well as in device manufacturing industries. However, these dielectric materials cannot be employed directly in photochemical reactions that are initiated by the absorption of UV-Vis photons. Despite their insensitivity to solar energy, dielectric materials can be made sono-photoactive even for low energy IR photons by modifications of the interfacial properties of dielectric materials by noble metals and metal oxides. In this investigation, by way of interface modification of dielectric MgO nanoparticles by Ag metal and Ag 2 O nanoparticles, IR photon initiated sono-photocatalytic activity of MgO is reported. The observed photocatalytic activity is found to be the synergic action of both IR light and sonication effect and sonication assisted a multi-step, sub-bandgap excitation of electrons in the MgO is proposed for the observed catalytic activity of Ag/Ag 2 O coated MgO nanoparticles. Our investigation reveals that other dielectric materials such as silver coated SiO 2 and Al 2 O 3 also exhibit IR active sono-photocatalytic activity. Copyright © 2018 Elsevier B.V. All rights reserved.

High density circuit technology, part 1

NASA Technical Reports Server (NTRS)

Wade, T. E.

1982-01-01

The metal (or dielectric) lift-off processes used in the semiconductor industry to fabricate high density very large scale integration (VLSI) systems were reviewed. The lift-off process consists of depositing the light-sensitive material onto the wafer and patterning first in such a manner as to form a stencil for the interconnection material. Then the interconnection layer is deposited and unwanted areas are lifted off by removing the underlying stencil. Several of these lift-off techniques were examined experimentally. The use of an auxiliary layer of polyimide to form a lift-off stencil offers considerable promise.

Characterizing Radio Emission From Extensive Air Showers with the SLAC-T510 Experiment, with Applications to ANITA

NASA Astrophysics Data System (ADS)

McGuire, Felicia Ann

Essential to metal-oxide-semiconductor field-effect transistor (MOSFET) scaling is the reduction of the supply voltage to mitigate the power consumption and corresponding heat dissipation. Conventional dielectric materials are subject to the thermal limit imposed by the Boltzmann factor in the subthreshold swing, which places an absolute minimum on the supply voltage required to modulate the current. Furthermore, as technology approaches the 5 nm node, electrostatic control of a silicon channel becomes exceedingly difficult, regardless of the gating technique. This notion of "the end of silicon scaling" has rapidly increased research into more scalable channel materials as well as new methods of transistor operation. Among the many promising options are two-dimensional (2D) FETs and negative capacitance (NC) FETs. 2D-FETs make use of atomically thin semiconducting channels that have enabled demonstrated scalability beyond what silicon can offer. NC-FETs demonstrate an effective negative capacitance arising from the integration of a ferroelectric into the transistor gate stack, allowing sub-60 mV/dec switching. While both of these devices provide significant advantages, neither can accomplish the ultimate goal of a FET that is both low-voltage and scalable. However, an appropriate fusion of the 2D-FET and NC-FET into a 2D NC-FET has the potential of enabling a steep-switching device that is dimensionally scalable beyond the 5 nm technology node. In this work, the motivation for and operation of 2D NC-FETs is presented. Experimental realization of 2D NC-FETs using 2D transition metal dichalcogenide molybdenum disulfide (MoS2) as the channel is shown with two different ferroelectric materials: 1) a solution-processed, polymeric poly(vinylidene difluoride trifluoroethylene) ferroelectric and 2) an atomic layer deposition (ALD) grown hafnium zirconium oxide (HfZrO2) ferroelectric. Each ferroelectric was integrated into the gate stack of a 2D-FET having either a top-gate (polymeric ferroelectric) or bottom-gate (HfZrO2 ferroelectric) configuration. HfZrO 2 devices with metallic interfacial layers (between ferroelectric and dielectric) and thinner ferroelectric layers were found to reduce both the hysteresis and the threshold voltage. Detailed characterization of the devices was performed and, most significantly, the 2D NC-FETs with HfZrO2 reproducibly yielded subthreshold swings well below the thermal limit with over more than four orders of magnitude in drain current modulation. HfZrO 2 devices without metallic interfacial layers were utilized to explore the impact of ferroelectric thickness, dielectric thickness, and dielectric composition on device performance. The impact of an interfacial metallic layer on the device operation was investigated in devices with HfZrO2 and shown to be crucial at enabling sub-60 mV/dec switching and large internal voltage gains. The significance of dielectric material choice on device performance was explored and found to be a critical factor in 2D NC-FET transistor operation. These successful results pave the way for future integration of this new device structure into existing technology markets.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tooker, Angela C.; Felix, Sarah H.; Pannu, Satinderpall S.

A neural interface includes a first dielectric material having at least one first opening for a first electrical conducting material, a first electrical conducting material in the first opening, and at least one first interconnection trace electrical conducting material connected to the first electrical conducting material. A stiffening shank material is located adjacent the first dielectric material, the first electrical conducting material, and the first interconnection trace electrical conducting material.

Back scattering involving embedded silicon nitride (SiN) nanoparticles for c-Si solar cells

NASA Astrophysics Data System (ADS)

Ghosh, Hemanta; Mitra, Suchismita; Siddiqui, M. S.; Saxena, A. K.; Chaudhuri, Partha; Saha, Hiranmay; Banerjee, Chandan

2018-04-01

A novel material, structure and method of synthesis for dielectric light trapping have been presented in this paper. First, the light scattering behaviour of silicon nitride nanoparticles have been theoretically studied in order to find the optimized size for dielectric back scattering by FDTD simulations from Lumerical Inc. The optical results have been used in electrical analysis and thereby, estimate the effect of nanoparticles on efficiency of the solar cells depending on substrate thickness. Experimentally, silicon nitride (SiN) nanoparticles have been formed using hydrogen plasma treatment on SiN layer deposited by Plasma Enhanced Chemical Vapour Deposition (PECVD). The size and area coverage of the nanoparticles were controlled by varying the working pressure, power density and treatment duration. The nanoparticles were integrated with partial rear contact c-Si solar cells as dielectric back reflector structures for the light trapping in thin silicon solar cells. Experimental results revealed the increases of current density by 2.7% in presence of SiN nanoparticles.

A study of dynamic SIMS analysis of low-k dielectric materials

NASA Astrophysics Data System (ADS)

Mowat, Ian A.; Lin, Xue-Feng; Fister, Thomas; Kendall, Marius; Chao, Gordon; Yang, Ming Hong

2006-07-01

Dynamic SIMS is an established tool for the characterization of dielectric layers in semiconductors, both for contaminant levels and for composition. As the silicon-based semiconductor industry moves towards the use of copper rather than aluminum, there is also a need to use lower k-dielectric materials to reduce RC delays and to reduce cross-talk between closely spaced metal lines. New dielectric materials pose serious challenges for implementation into semiconductor processes and also for the analytical scientist doing measurements on them. The move from inorganic materials such as SiO 2 to organic or carbon-rich low-k materials is a large change for the SIMS analyst. Low-k dielectric films from different sources can be very different materials with different analytical issues. A SIMS challenge for these materials is dealing with their insulating nature and their also fragility, particularly for porous films. These materials can be extremely sensitive to electron beam damage during charge neutralization, leading to difficulties in determining depth scales and introducing unknown errors to secondary ion counts and their subsequent conversion to concentrations. This paper presents details regarding an investigation of the effects of electron beam exposure on a low-k material. These effects and their potential impact on SIMS data will be investigated using FT-IR, TOF-SIMS, AFM and stylus profilometry.

Microassembly of Heterogeneous Materials using Transfer Printing and Thermal Processing

PubMed Central

Keum, Hohyun; Yang, Zining; Han, Kewen; Handler, Drew E.; Nguyen, Thong Nhu; Schutt-Aine, Jose; Bahl, Gaurav; Kim, Seok

2016-01-01

Enabling unique architectures and functionalities of microsystems for numerous applications in electronics, photonics and other areas often requires microassembly of separately prepared heterogeneous materials instead of monolithic microfabrication. However, microassembly of dissimilar materials while ensuring high structural integrity has been challenging in the context of deterministic transferring and joining of materials at the microscale where surface adhesion is far more dominant than body weight. Here we present an approach to assembling microsystems with microscale building blocks of four disparate classes of device-grade materials including semiconductors, metals, dielectrics, and polymers. This approach uniquely utilizes reversible adhesion-based transfer printing for material transferring and thermal processing for material joining at the microscale. The interfacial joining characteristics between materials assembled by this approach are systematically investigated upon different joining mechanisms using blister tests. The device level capabilities of this approach are further demonstrated through assembling and testing of a microtoroid resonator and a radio frequency (RF) microelectromechanical systems (MEMS) switch that involve optical and electrical functionalities with mechanical motion. This work opens up a unique route towards 3D heterogeneous material integration to fabricate microsystems. PMID:27427243

Metal-free magnetic conductor substrates for placement-immune antenna assemblies

DOEpatents

Eubanks, Travis Wayne; Loui, Hung; McDonald, Jacob Jeremiah

2015-09-29

A magnetic conductor substrate produced for mounting to an antenna includes a sheet of dielectric lattice material having a length, a width and a thickness that is less than the length and less than the width. Within the sheet of dielectric lattice material is disposed an array of dielectric elements.

From Organized High-Throughput Data to Phenomenological Theory using Machine Learning: The Example of Dielectric Breakdown

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Chiho; Pilania, Ghanshyam; Ramprasad, Ramamurthy

Understanding the behavior (and failure) of dielectric insulators experiencing extreme electric fields is critical to the operation of present and emerging electrical and electronic devices. Despite its importance, the development of a predictive theory of dielectric breakdown has remained a challenge, owing to the complex multiscale nature of this process. We focus on the intrinsic dielectric breakdown field of insulators—the theoretical limit of breakdown determined purely by the chemistry of the material, i.e., the elements the material is composed of, the atomic-level structure, and the bonding. Starting from a benchmark dataset (generated from laborious first principles computations) of the intrinsicmore » dielectric breakdown field of a variety of model insulators, simple predictive phenomenological models of dielectric breakdown are distilled using advanced statistical or machine learning schemes, revealing key correlations and analytical relationships between the breakdown field and easily accessible material properties. Lastly, the models are shown to be general, and can hence guide the screening and systematic identification of high electric field tolerant materials.« less

Evolutionary search for new high-k dielectric materials: methodology and applications to hafnia-based oxides.

PubMed

Zeng, Qingfeng; Oganov, Artem R; Lyakhov, Andriy O; Xie, Congwei; Zhang, Xiaodong; Zhang, Jin; Zhu, Qiang; Wei, Bingqing; Grigorenko, Ilya; Zhang, Litong; Cheng, Laifei

2014-02-01

High-k dielectric materials are important as gate oxides in microelectronics and as potential dielectrics for capacitors. In order to enable computational discovery of novel high-k dielectric materials, we propose a fitness model (energy storage density) that includes the dielectric constant, bandgap, and intrinsic breakdown field. This model, used as a fitness function in conjunction with first-principles calculations and the global optimization evolutionary algorithm USPEX, efficiently leads to practically important results. We found a number of high-fitness structures of SiO2 and HfO2, some of which correspond to known phases and some of which are new. The results allow us to propose characteristics (genes) common to high-fitness structures--these are the coordination polyhedra and their degree of distortion. Our variable-composition searches in the HfO2-SiO2 system uncovered several high-fitness states. This hybrid algorithm opens up a new avenue for discovering novel high-k dielectrics with both fixed and variable compositions, and will speed up the process of materials discovery.

From Organized High-Throughput Data to Phenomenological Theory using Machine Learning: The Example of Dielectric Breakdown

DOE PAGES

Kim, Chiho; Pilania, Ghanshyam; Ramprasad, Ramamurthy

2016-02-02

Understanding the behavior (and failure) of dielectric insulators experiencing extreme electric fields is critical to the operation of present and emerging electrical and electronic devices. Despite its importance, the development of a predictive theory of dielectric breakdown has remained a challenge, owing to the complex multiscale nature of this process. We focus on the intrinsic dielectric breakdown field of insulators—the theoretical limit of breakdown determined purely by the chemistry of the material, i.e., the elements the material is composed of, the atomic-level structure, and the bonding. Starting from a benchmark dataset (generated from laborious first principles computations) of the intrinsicmore » dielectric breakdown field of a variety of model insulators, simple predictive phenomenological models of dielectric breakdown are distilled using advanced statistical or machine learning schemes, revealing key correlations and analytical relationships between the breakdown field and easily accessible material properties. Lastly, the models are shown to be general, and can hence guide the screening and systematic identification of high electric field tolerant materials.« less

A comparison study of the Born effective charges and dielectric properties of the cubic, tetragonal, monoclinic, ortho-I, ortho-II and ortho-III phases of zirconia

NASA Astrophysics Data System (ADS)

Zhang, Yan; Chen, Hua-Xin; Duan, Li; Fan, Ji-Bin; Ni, Lei; Ji, Vincent

2018-07-01

Using density-functional perturbation theory, we systematically investigate the Born effective charges and dielectric properties of cubic, tetragonal, monoclinic, ortho-I (Pbca), ortho-II (Pnma) and ortho-III (Pca21) phases of ZrO2. The magnitudes of the Born effective charges of the Zr and oxygen atoms are greater than their nominal ionic valences (+4 for Zr and -2 for oxygen), indicating a strong dynamic charge transfer from Zr atoms to O atoms and a mixed covalent-ionic bonding in six phases of ZrO2. For all six phases of ZrO2, the electronic contributions εij∞ to the static dielectric constant are rather small (range from 5 to 6.5) and neither strongly anisotropic nor strongly dependent on the structural phase, while the ionic contributions εijion to the static dielectric constant are large and not only anisotropic but also dependent on the structural phase. The average dielectric constant εbar0 of the six ZrO2 phases decreases in the sequence of tetragonal, cubic, ortho-II (Pnma), ortho-I (Pbca), ortho-III (Pca21) and monoclinic. So among six phases of ZrO2, the tetragonal and cubic phases are two suitable phases to replace SiO2 as the gate dielectric material in modern integrated-circuit technology. Furthermore, for the tetragonal ZrO2 the best orientation is [100].

Dielectric nanoresonators for light manipulation

NASA Astrophysics Data System (ADS)

Yang, Zhong-Jian; Jiang, Ruibin; Zhuo, Xiaolu; Xie, Ya-Ming; Wang, Jianfang; Lin, Hai-Qing

2017-07-01

Nanostructures made of dielectric materials with high or moderate refractive indexes can support strong electric and magnetic resonances in the optical region. They can therefore function as nanoresonators. In addition to plasmonic metal nanostructures that have been widely investigated, dielectric nanoresonators provide a new type of building blocks for realizing powerful and versatile nanoscale light manipulation. In contrast to plasmonic metal nanostructures, nanoresonators made of appropriate dielectric materials are low-cost, earth-abundant and have very small or even negligible light energy losses. As a result, they will find potential applications in a number of photonic devices, especially those that require low energy losses. In this review, we describe the recent progress on the experimental and theoretical studies of dielectric nanoresonators. We start from the basic theory of the electromagnetic responses of dielectric nanoresonators and their fabrication methods. The optical properties of individual dielectric nanoresonators are then elaborated, followed by the coupling behaviors between dielectric nanoresonators, between dielectric nanoresonators and substrates, and between dielectric nanoresonators and plasmonic metal nanostructures. The applications of dielectric nanoresonators are further described. Finally, the challenges and opportunities in this field are discussed.

All-Dielectric Multilayer Cylindrical Structures for Invisibility Cloaking

PubMed Central

Mirzaei, Ali; Miroshnichenko, Andrey E.; Shadrivov, Ilya V.; Kivshar, Yuri S.

2015-01-01

We study optical response of all-dielectric multilayer structures and demonstrate that the total scattering of such structures can be suppressed leading to optimal invisibility cloaking. We use experimental material data and a genetic algorithm to reduce the total scattering by adjusting the material and thickness of various layers for several types of dielectric cores at telecommunication wavelengths. Our approach demonstrates 80-fold suppression of the total scattering cross-section by employing just a few dielectric layers. PMID:25858295

Paired Pulse Basis Functions for the Method of Moments EFIE Solution of Electromagnetic Problems Involving Arbitrarily-shaped, Three-dimensional Dielectric Scatterers

NASA Technical Reports Server (NTRS)

MacKenzie, Anne I.; Rao, Sadasiva M.; Baginski, Michael E.

2007-01-01

A pair of basis functions is presented for the surface integral, method of moment solution of scattering by arbitrarily-shaped, three-dimensional dielectric bodies. Equivalent surface currents are represented by orthogonal unit pulse vectors in conjunction with triangular patch modeling. The electric field integral equation is employed with closed geometries for dielectric bodies; the method may also be applied to conductors. Radar cross section results are shown for dielectric bodies having canonical spherical, cylindrical, and cubic shapes. Pulse basis function results are compared to results by other methods.

Dielectric particle injector for material processing

NASA Technical Reports Server (NTRS)

Leung, Philip L. (Inventor)

1992-01-01

A device for use as an electrostatic particle or droplet injector is disclosed which is capable of injecting dielectric particles or droplets. The device operates by first charging the dielectric particles or droplets using ultraviolet light induced photoelectrons from a low work function material plate supporting the dielectric particles or droplets, and then ejecting the charged particles or droplets from the plate by utilizing an electrostatic force. The ejected particles or droplets are mostly negatively charged in the preferred embodiment; however, in an alternate embodiment, an ion source is used instead of ultraviolet light to eject positively charged dielectric particles or droplets.

The Effect of Multi Wall Carbon Nanotubes on Some Physical Properties of Epoxy Matrix

NASA Astrophysics Data System (ADS)

Al-Saadi, Tagreed M.; hammed Aleabi, Suad; Al-Obodi, Entisar E.; Abdul-Jabbar Abbas, Hadeel

2018-05-01

This research involves using epoxy resin as a matrix for making a composite material, while the multi wall carbon nanotubes (MWNCTs) is used as a reinforcing material with different fractions (0.0,0.02, 0.04, 0.06) of the matrix weight. The mechanical ( hardness ), electrical ( dielectric constant, dielectric loss factor, dielectric strength, electrical conductivity ), and thermal properties (thermal conductivity ) were studied. The results showed the increase of hardness, thermal conductivity, electrical conductivity and break down strength with the increase of MWCNT concentration, but the behavior of dielectric loss factor and dielectric constant is opposite that.

Material with high dielectric constant, low dielectric loss, and good mechanical and thermal properties produced using multi-wall carbon nanotubes wrapped with poly(ether sulphone) in a poly(ether ether ketone) matrix

NASA Astrophysics Data System (ADS)

Zhang, Shuling; Wang, Hongsong; Wang, Guibin; Jiang, Zhenhua

2012-07-01

A material with high dielectric constant, low dielectric loss, and good mechanical and thermal properties was produced using multi-wall carbon nanotubes (MWCNTs) wrapped with poly(ether sulphone) (PES) dispersed in a poly(ether ether ketone) (PEEK) matrix. The material was fabricated using melt-blending, and MWCNT/PEEK composites show different degrees of improvement in the measured dielectric, mechanical, and thermal properties as compared to pure PEEK. This is attributed to the high conductivity of MWCNTs, the effect of wrapping MWCNTs with PES, the good dispersion of the wrapped MWCNTs in PEEK, and the strong interfacial adhesion between the wrapped MWCNTs and the PEEK.

Holmium hafnate: An emerging electronic device material

NASA Astrophysics Data System (ADS)

Pavunny, Shojan P.; Sharma, Yogesh; Kooriyattil, Sudheendran; Dugu, Sita; Katiyar, Rajesh K.; Scott, James F.; Katiyar, Ram S.

2015-03-01

We report structural, optical, charge transport, and temperature properties as well as the frequency dependence of the dielectric constant of Ho2Hf2O7 (HHO) which make this material desirable as an alternative high-k dielectric for future silicon technology devices. A high dielectric constant of ˜20 and very low dielectric loss of ˜0.1% are temperature and voltage independent at 100 kHz near ambient conditions. The Pt/HHO/Pt capacitor exhibits exceptionally low Schottky emission-based leakage currents. In combination with the large observed bandgap Eg of 5.6 eV, determined by diffuse reflectance spectroscopy, our results reveal fundamental physics and materials science of the HHO metal oxide and its potential application as a high-k dielectric for the next generation of complementary metal-oxide-semiconductor devices.

Influence of the local structure in phase-change materials on their dielectric permittivity.

PubMed

Shportko, Kostiantyn V; Venger, Eugen F

2015-01-01

Ge-Sb-Te alloys, which belong to the phase-change materials, are promising materials for data storage and display and data visualization applications due to their unique properties. This includes a remarkable difference of their electrical and optical properties in the amorphous and crystalline state. Pronounced change of optical properties for Ge-Sb-Te alloys is linked to the different bonding types and different atomic arrangements in amorphous and crystalline states. The dielectric function of phase-change materials has been investigated in the far infrared (FIR) range. Phonons have been detected by FTIR spectroscopy. Difference of the dispersion of the dielectric permittivity of amorphous and crystalline samples is caused by different structures in different states which contribute to the dielectric permittivity.

Recent Progress on Ferroelectric Polymer-Based Nanocomposites for High Energy Density Capacitors: Synthesis, Dielectric Properties, and Future Aspects.

PubMed

Prateek; Thakur, Vijay Kumar; Gupta, Raju Kumar

2016-04-13

Dielectric polymer nanocomposites are rapidly emerging as novel materials for a number of advanced engineering applications. In this Review, we present a comprehensive review of the use of ferroelectric polymers, especially PVDF and PVDF-based copolymers/blends as potential components in dielectric nanocomposite materials for high energy density capacitor applications. Various parameters like dielectric constant, dielectric loss, breakdown strength, energy density, and flexibility of the polymer nanocomposites have been thoroughly investigated. Fillers with different shapes have been found to cause significant variation in the physical and electrical properties. Generally, one-dimensional and two-dimensional nanofillers with large aspect ratios provide enhanced flexibility versus zero-dimensional fillers. Surface modification of nanomaterials as well as polymers adds flavor to the dielectric properties of the resulting nanocomposites. Nowadays, three-phase nanocomposites with either combination of fillers or polymer matrix help in further improving the dielectric properties as compared to two-phase nanocomposites. Recent research has been focused on altering the dielectric properties of different materials while also maintaining their superior flexibility. Flexible polymer nanocomposites are the best candidates for application in various fields. However, certain challenges still present, which can be solved only by extensive research in this field.

Study of microwave drying of wet materials based on one-dimensional two-phase model

NASA Astrophysics Data System (ADS)

Salomatov, Vl V.; Karelin, V. A.

2017-11-01

Currently, microwave is one of the most interesting ways to conduct drying of dielectric materials, in particular coal. In this paper, two processes were considered - heating and drying. The temperature field of the coal semi-mass in the heating mode is found analytically strictly with the use of integral transformations. The drying process is formulated as a nonlinear Stephen problem with a moving boundary of the liquid-vapor phase transformation. The temperature distribution, speed and drying time in this mode are determined approximately analytically. Parametric analysis of the influence of the material and boundary conditions on the dynamics of warming up and drying is revealed.

Study made of dielectric properties of promising materials for cryogenic capacitors

NASA Technical Reports Server (NTRS)

Mathes, K. N.; Minnich, S. H.

1967-01-01

Experimental investigations were conducted to determine dielectric properties of promising materials for cryogenic capacitors to be used in energy storage and pulse applications. The three classes of materials investigated were inorganic bonded ferroelectric materials, anodic coatings on metal foils, and polar low temperature liquids.

Effect on the grain size of single-mode microwave sintered NiCuZn ferrite and zinc titanate dielectric resonator ceramics.

PubMed

Sirugudu, Roopas Kiran; Vemuri, Rama Krishna Murthy; Venkatachalam, Subramanian; Gopalakrishnan, Anisha; Budaraju, Srinivasa Murty

2011-01-01

Microwave sintering of materials significantly depends on dielectric, magnetic and conductive Losses. Samples with high dielectric and magnetic loss such as ferrites could be sintered easily. But low dielectric loss material such as dielectric resonators (paraelectrics) finds difficulty in generation of heat during microwave interaction. Microwave sintering of materials of these two classes helps in understanding the variation in dielectric and magnetic characteristics with respect to the change in grain size. High-energy ball milled Ni0.6Cu0.2Zn0.2Fe1.98O4-delta and ZnTiO3 are sintered in conventional and microwave methods and characterized for respective dielectric and magnetic characteristics. The grain size variation with higher copper content is also observed with conventional and microwave sintering. The grain size in microwave sintered Ni0.6Cu0.2Zn0.2Fe1.98O4-delta is found to be much small and uniform in comparison with conventional sintered sample. However, the grain size of microwave sintered sample is almost equal to that of conventional sintered sample of Ni0.3Cu0.5Zn0.2Fe1.98O4-delta. In contrast to these high dielectric and magnetic loss ferrites, the paraelectric materials are observed to sinter in presence of microwaves. Although microwave sintered zinc titanate sample showed finer and uniform grains with respect to conventional samples, the dielectric characteristics of microwave sintered sample are found to be less than that of conventional sample. Low dielectric constant is attributed to the low density. Smaller grain size is found to be responsible for low quality factor and the presence of small percentage of TiO2 is observed to achieve the temperature stable resonant frequency.

The possibility of giant dielectric materials for multilayer ceramic capacitors.

PubMed

Ishii, Tatsuya; Endo, Makoto; Masuda, Kenichiro; Ishida, Keisuke

2013-02-11

There have been numerous reports on discovery of giant dielectric permittivity materials called internal barrier layer capacitor in the recent years. We took particular note of one of such materials, i.e., BaTiO 3 with SiO 2 coating. It shows expressions of giant electric permittivity when processed by spark plasma sintering. So we evaluated various electrical characteristics of this material to find out whether it is applicable to multilayer ceramic capacitors. Our evaluation revealed that the isolated surface structure is the sole cause of expressions of giant dielectric permittivity.

Modeling and control of a dielectric elastomer actuator

NASA Astrophysics Data System (ADS)

Gupta, Ujjaval; Gu, Guo-Ying; Zhu, Jian

2016-04-01

The emerging field of soft robotics offers the prospect of applying soft actuators as artificial muscles in the robots, replacing traditional actuators based on hard materials, such as electric motors, piezoceramic actuators, etc. Dielectric elastomers are one class of soft actuators, which can deform in response to voltage and can resemble biological muscles in the aspects of large deformation, high energy density and fast response. Recent research into dielectric elastomers has mainly focused on issues regarding mechanics, physics, material designs and mechanical designs, whereas less importance is given to the control of these soft actuators. Strong nonlinearities due to large deformation and electromechanical coupling make control of the dielectric elastomer actuators challenging. This paper investigates feed-forward control of a dielectric elastomer actuator by using a nonlinear dynamic model. The material and physical parameters in the model are identified by quasi-static and dynamic experiments. A feed-forward controller is developed based on this nonlinear dynamic model. Experimental evidence shows that this controller can control the soft actuator to track the desired trajectories effectively. The present study confirms that dielectric elastomer actuators are capable of being precisely controlled with the nonlinear dynamic model despite the presence of material nonlinearity and electromechanical coupling. It is expected that the reported results can promote the applications of dielectric elastomer actuators to soft robots or biomimetic robots.

Dielectric Spectroscopic Detection of Early Failures in 3-D Integrated Circuits.

PubMed

Obeng, Yaw; Okoro, C A; Ahn, Jung-Joon; You, Lin; Kopanski, Joseph J

The commercial introduction of three dimensional integrated circuits (3D-ICs) has been hindered by reliability challenges, such as stress related failures, resistivity changes, and unexplained early failures. In this paper, we discuss a new RF-based metrology, based on dielectric spectroscopy, for detecting and characterizing electrically active defects in fully integrated 3D devices. These defects are traceable to the chemistry of the insolation dielectrics used in the through silicon via (TSV) construction. We show that these defects may be responsible for some of the unexplained early reliability failures observed in TSV enabled 3D devices.

Celsian Glass-Ceramic Matrix Composites

NASA Technical Reports Server (NTRS)

Bansal, Narottam P.; Dicarlo, James A.

1996-01-01

Glass-ceramic matrix reinforced fiber composite materials developed for use in low dielectric applications, such as radomes. Materials strong and tough, exhibit low dielectric properties, and endure high temperatures.

Novel Dual-band Band-Pass Filters Based on Surface Plasmon Polariton-like Propagation Induced by Structural Dispersion of Substrate Integrated Waveguide.

PubMed

Cselyuszka, Norbert; Sakotic, Zarko; Kitic, Goran; Crnojevic-Bengin, Vesna; Jankovic, Nikolina

2018-05-29

In this paper, we present two novel dual-band bandpass filters based on surface plasmon polariton-like (SPP-like) propagation induced by structural dispersion of substrate integrated waveguide (SIW). Both filters are realized as a three-layer SIW where each layer represents a sub-SIW structure with intrinsic effective permittivity that depends on its width and filling dielectric material. The layers are designed to have effective permittivities of opposite signs in certain frequency ranges, which enables SPP-like propagation to occur at their interfaces. Since three layers can provide two distinct SPP-like propagations, the filters exhibit dual-band behaviour. A detailed theoretical and numerical analysis and numerical optimization have been used to design the filters, which were afterwards fabricated using standard printed circuit board technology. The independent choice of geometrical parameters of sub-SIWs and/or the corresponding dielectric materials provide a great freedom to arbitrarily position the passbands in the spectrum, which is a significant advantage of the proposed filters. At the same time, they meet the requirements for low-cost low-profile configuration since they are realized as SIW structures, as well as for excellent in-band characteristics and selectivity which is confirmed by the measurement results.

Colossal dielectric constant up to gigahertz at room temperature

NASA Astrophysics Data System (ADS)

Krohns, S.; Lunkenheimer, P.; Kant, Ch.; Pronin, A. V.; Brom, H. B.; Nugroho, A. A.; Diantoro, M.; Loidl, A.

2009-03-01

The applicability of recently discovered materials with extremely high ("colossal") dielectric constants, required for future electronics, suffers from the fact that their dielectric constant ɛ' only is huge in a limited frequency range below about 1 MHz. In the present report, we show that the dielectric properties of a charge-ordered nickelate, La15/8Sr1/8NiO4, surpass those of other materials. Especially, ɛ' retains its colossal magnitude of >10 000 well into the gigahertz range.

Fabrication of photonic band gap materials

DOEpatents

Constant, Kristen; Subramania, Ganapathi S.; Biswas, Rana; Ho, Kai-Ming

2002-01-15

A method for forming a periodic dielectric structure exhibiting photonic band gap effects includes forming a slurry of a nano-crystalline ceramic dielectric or semiconductor material and monodisperse polymer microspheres, depositing a film of the slurry on a substrate, drying the film, and calcining the film to remove the polymer microspheres therefrom. The film may be cold-pressed after drying and prior to calcining. The ceramic dielectric or semiconductor material may be titania, and the polymer microspheres may be polystyrene microspheres.

Encapsulation methods and dielectric layers for organic electrical devices

DOEpatents

Blum, Yigal D; Chu, William Siu-Keung; MacQueen, David Brent; Shi, Yijan

2013-07-02

The disclosure provides methods and materials suitable for use as encapsulation barriers and dielectric layers in electronic devices. In one embodiment, for example, there is provided an electroluminescent device or other electronic device with a dielectric layer comprising alternating layers of a silicon-containing bonding material and a ceramic material. The methods provide, for example, electronic devices with increased stability and shelf-life. The invention is useful, for example, in the field of microelectronic devices.

Nanostructure multilayer dielectric materials for capacitors and insulators

DOEpatents

Barbee, Jr., Troy W.; Johnson, Gary W.

1998-04-21

A capacitor is formed of at least two metal conductors having a multilayer dielectric and opposite dielectric-conductor interface layers in between. The multilayer dielectric includes many alternating layers of amorphous zirconium oxide (ZrO.sub.2) and alumina (Al.sub.2 O.sub.3). The dielectric-conductor interface layers are engineered for increased voltage breakdown and extended service life. The local interfacial work function is increased to reduce charge injection and thus increase breakdown voltage. Proper material choices can prevent electrochemical reactions and diffusion between the conductor and dielectric. Physical vapor deposition is used to deposit the zirconium oxide (ZrO.sub.2) and alumina (Al.sub.2 O.sub.3) in alternating layers to form a nano-laminate.

Nanostructure multilayer dielectric materials for capacitors and insulators

DOEpatents

Barbee, T.W. Jr.; Johnson, G.W.

1998-04-21

A capacitor is formed of at least two metal conductors having a multilayer dielectric and opposite dielectric-conductor interface layers in between. The multilayer dielectric includes many alternating layers of amorphous zirconium oxide (ZrO{sub 2}) and alumina (Al{sub 2}O{sub 3}). The dielectric-conductor interface layers are engineered for increased voltage breakdown and extended service life. The local interfacial work function is increased to reduce charge injection and thus increase breakdown voltage. Proper material choices can prevent electrochemical reactions and diffusion between the conductor and dielectric. Physical vapor deposition is used to deposit the zirconium oxide (ZrO{sub 2}) and alumina (Al{sub 2}O{sub 3}) in alternating layers to form a nano-laminate. 1 fig.

Materials science, integration, and performance characterization of high-dielectric constant thin film based devices

NASA Astrophysics Data System (ADS)

Fan, Wei

To overcome the oxidation and diffusion problems encountered during Copper integration with oxide thin film-based devices, TiAl/Cu/Ta heterostructure has been first developed in this study. Investigation on the oxidation and diffusion resistance of the laminate structure showed high electrical conductance and excellent thermal stability in oxygen environment. Two amorphous oxide layers that were formed on both sides of the TiAl barrier after heating in oxygen have been revealed as the structure that effectively prevents oxygen penetration and protects the integrity of underlying Cu layer. Polycrystalline (BaxSr1-x)TiO3 (BST) thin films were subsequently deposited on the Cu-based bottom electrode by RF magnetron sputtering to investigate the interaction between the oxide and Cu layers. The thickness of the interfacial layer and interface roughness play critical roles in the optimization of the electrical performance of the BST capacitors using Cu-based electrode. It was determined that BST deposition at moderate temperature followed by rapid thermal annealing in pure oxygen yields BST/Cu capacitors with good electrical properties for application to high frequency devices. The knowledge obtained on the study of barrier properties of TiAl inspired a continuous research on the materials science issues related to the application of the hybrid TiAlOx, as high-k gate dielectric in MOSFET devices. Novel fabrication process such as deposition of ultra-thin TiAl alloy layer followed by oxidation with atomic oxygen has been established in this study. Stoichiometric amorphous TiAlOx layers, exhibiting only Ti4+ and Al3+ states, were produced with a large variation of oxidation temperature (700°C to room temperature). The interfacial SiOx formation between TiAlOx and Si was substantially inhibited by the use of the low temperature oxidation process. Electrical characterization revealed a large permittivity of 30 and an improved band structure for the produced TiAlOx layers, compared with pure TiO2. A modified 3-element model was adopted to extract the true C-V behavior of the TiAlOx-based MOS capacitor. Extremely small equivalent oxide thickness (EOT) less than 0.5 nm with dielectric leakage 4˜5 magnitude lower than that for SiO2 has been achieved on TiAlOx layer as a result of its excellent dielectric properties.

Nanostructured Dielectric Fractals on Resonant Plasmonic Metasurfaces for Selective and Sensitive Optical Sensing of Volatile Compounds.

PubMed

Fusco, Zelio; Rahmani, Mohsen; Bo, Renheng; Verre, Ruggero; Motta, Nunzio; Käll, Mikael; Neshev, Dragomir; Tricoli, Antonio

2018-06-04

Advances in the understanding and fabrication of plasmonic nanostructures have led to a plethora of unprecedented optoelectronic and optochemical applications. Plasmon resonance has found widespread use in efficient optical transducers of refractive index changes in liquids. However, it has proven challenging to translate these achievements to the selective detection of gases, which typically adsorb non-specifically and induce refractive index changes below the detection limit. Here, it's shown that integration of tailored fractals of dielectric TiO 2 nanoparticles on a plasmonic metasurface strongly enhances the interaction between the plasmonic field and volatile organic molecules and provides a means for their selective detection. Notably, this superior optical response is due to the enhancement of the interaction between the dielectric fractals and the plasmonic metasurface for thickness of up to 1.8 μm, much higher than the evanescent plasmonic near-field (≈30 nm) . Optimal dielectric-plasmonic structures allow measurements of changes in the refractive index of the gas mixture down to <8 × 10 -6 at room temperature and selective identification of three exemplary volatile organic compounds. These findings provide a basis for the development of a novel family of dielectric-plasmonic materials with application extending from light harvesting and photocatalysts to contactless sensors for noninvasive medical diagnostics. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Solution Processed Metal Oxide High-κ Dielectrics for Emerging Transistors and Circuits.

PubMed

Liu, Ao; Zhu, Huihui; Sun, Huabin; Xu, Yong; Noh, Yong-Young

2018-06-14

The electronic functionalities of metal oxides comprise conductors, semiconductors, and insulators. Metal oxides have attracted great interest for construction of large-area electronics, particularly thin-film transistors (TFTs), for their high optical transparency, excellent chemical and thermal stability, and mechanical tolerance. High-permittivity (κ) oxide dielectrics are a key component for achieving low-voltage and high-performance TFTs. With the expanding integration of complementary metal oxide semiconductor transistors, the replacement of SiO 2 with high-κ oxide dielectrics has become urgently required, because their provided thicker layers suppress quantum mechanical tunneling. Toward low-cost devices, tremendous efforts have been devoted to vacuum-free, solution processable fabrication, such as spin coating, spray pyrolysis, and printing techniques. This review focuses on recent progress in solution processed high-κ oxide dielectrics and their applications to emerging TFTs. First, the history, basics, theories, and leakage current mechanisms of high-κ oxide dielectrics are presented, and the underlying mechanism for mobility enhancement over conventional SiO 2 is outlined. Recent achievements of solution-processed high-κ oxide materials and their applications in TFTs are summarized and traditional coating methods and emerging printing techniques are introduced. Finally, low temperature approaches, e.g., ecofriendly water-induced, self-combustion reaction, and energy-assisted post treatments, for the realization of flexible electronics and circuits are discussed. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Size- and temperature-dependent Hamaker constants for heterogeneous systems of interacting nanoparticles

NASA Astrophysics Data System (ADS)

Pinchuk, P.; Pinchuk, A. O.

2016-09-01

Hamaker-Lifshitz constants are used to calculate van der Waals interaction forces between small particles in solution. Typically, these constants are size-independent and material specific. According to the Lifshitz theory, the Hamaker-Lifshitz constants can be calculated by taking integrals that include the dielectric permittivity, as a function of frequency, of the interacting particles and the medium around particles. The dielectric permittivity of interacting metal nanoparticles can be calculated using the free-electron Drude model for metals. For bulk metals, the Drude model does is size independent. However, the conducting electrons in small metal nanoparticles exhibit surface scattering, which changes the complex dielectric permittivity function. Additionally, the Drude model can be modified to include temperature dependence. That is, an increase in temperature leads to thermal volume expansion and increased phonon population, which affect the scattering rate of the electrons and the plasma frequency. Both of these terms contribute significantly to the Drude model for the dielectric permittivity of the particles. In this work, we show theoretically that scattering of the free conducting electrons inside noble metal nanoparticles with the size of 1 - 50 nm leads to size-dependent dielectric permittivity and Hamaker-Lifshitz constants. In addition, we calculate numerically the Hamaker-Lifshitz constants for a variety of temperatures. The results of the study might be of interest for understanding colloidal stability of metal nanoparticles.

Positron annihilation studies of silicon-based materials

NASA Astrophysics Data System (ADS)

Petkov, Mihail Petkov

Positron Annihilation Spectroscopy (PAS) is used as a defect-profiling tool in the characterization of Si-based materials. PAS, in conjunction with variable energy positron beams, is a non-destructive depth-profiling probe, ideally suited for studying thin films, multi-layered structures, and buried interfaces. Its sensitivity to open-volume defects covers a wide range of defect sizes and concentrations, and surpasses that of most other techniques. This dissertation presents PAS investigations of electrical, chemical and mechanical properties of a number of advanced materials for future use by the semiconductor industry. Among the subjects of this work are: hydrogenated amorphous silicon (a-Si:H) for use in solar cells and flat-panel displays; low dielectric constant materials (low-k) for interlayer dielectrics; and thin-gate transistors, focusing on the defects at the Si/SiO 2 interface, which limit the device reliability. Results from extensive research on various possibilities to enhance the PAS capability by increasing its efficiency are presented in the appendices. The recognition of different dangling bond defects for low defect densities is achieved in these first PAS studies of void-free a-Si:H. Direct evidence of the existence of dopant-defect complexes is obtained for the first time. This research lays the foundation for future studies of the role of the impurities in light- and thermal degradation of a-Si:H PAS was applied to the characterization of porous low-k dielectrics. The annihilation observables are correlated with the dielectric properties of the material and their preparation conditions. PAS is the only non-destructive local k-probe, and the only tool for measuring void densities and sizes. The method is also sensitive to the chemical environment of the voids, seen during oxidation, water absorption, and forming gas anneal. Industrial research, partially based on these results, is currently in progress at IBM. A decade-old controversy, involving different models of defect states at Si/SiO2 interfaces, has been resolved. The two-defect model was confirmed and previous results were reevaluated. Research in this area will promote the use of PAS as an on-line diagnostic tool in the manufacturing of integrated circuits.

Materials science and integration bases for fabrication of (BaxSr1-x)TiO3 thin film capacitors with layered Cu-based electrodes

NASA Astrophysics Data System (ADS)

Fan, W.; Kabius, B.; Hiller, J. M.; Saha, S.; Carlisle, J. A.; Auciello, O.; Chang, R. P. H.; Ramesh, R.

2003-11-01

The synthesis and fundamental material properties of layered TiAl/Cu/Ta electrodes were investigated to achieve the integration of Cu electrodes with high-dielectric constant (κ) oxide thin films for application to the fabrication of high-frequency devices. The Ta layer is an excellent diffusion barrier to inhibit deleterious Cu diffusion into the Si substrate, while the TiAl layer provides an excellent barrier against oxygen diffusion into the Cu layer to inhibit Cu oxidation during the growth of the high-κ layer in an oxygen atmosphere. Polycrystalline (BaxSr1-x)TiO3 (BST) thin films were grown on the Cu-based bottom electrode by rf magnetron sputtering at temperatures in the range 400-600 °C in oxygen, to investigate the performance of BST/Cu-based capacitors. Characterization of the Cu-based layered structure using surface analytical methods showed that two amorphous oxide layers were formed on both sides of the TiAl barrier, such that the oxide layer on the free surface of the TiAl layer correlates with TiAlOx, while the oxide layer at the TiAl/Cu interface is an Al2O3-rich layer. This double amorphous barrier layer structure effectively prevents oxygen penetration towards the underlying Cu and Ta layers. The TiAlOx interfacial layer, which has a relatively low dielectric constant compared with BST, reduced the total capacitance of the BST thin film capacitors. In addition, the layered electrode-oxide interface roughening observed during the growth of BST films at high temperature, due to copper grain growth, resulted in large dielectric loss on the fabricated BST capacitors. These problems were solved by growing the BST layer at 450 °C followed by a rapid thermal annealing at 700 °C. This process significantly reduced the thickness of the TiAlOx layer and interface roughness resulting in BST capacitors exhibiting properties suitable for the fabrication of high-performance high-frequency devices. In summary, relatively high dielectric constant (280), low dielectric loss (0.007), and low leakage current (<2×10-8 A/cm2 at 100 kV/cm) were achieved for BST thin film capacitors with Cu-based electrodes.

Dielectric Characterization of Mylar and The Effects of Doping Processes.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Belcher, Cami Beth

2016-11-01

Mylar® polymer is a bi-axially oriented polyethylene terephthalate (PET) polymer film used widely as a dielectric, specifically in capacitors. The dielectric characteristics of Mylar have been well studied and documented over the years; however, many of the mechanisms responsible for dielectric breakdown and failure are not understood for modified versions of the material. Previous studies on Mylar confirm that factors such as temperature, humidity, and voltage ramp rates can also have a significant effect on the dielectric properties and measurement of the dielectric properties. This study seeks to determine how dielectric properties, including permittivity, dielectric loss, and breakdown strength, aremore » affected by doping of the polymer. To do this, two types of Mylar films, virgin film and film doped with a small-molecule electron-acceptor, are tested. Both types of materials are tested under a variety of environmental and experimental conditions, including testing at elevated temperatures, varying relative humidity, and varying ramp rates in dielectric breakdown testing. Analysis of permittivity, dielectric loss, and breakdown strength will be presented comparing virgin and doped Mylar to gain insight into the effects of doping with electron-acceptor molecules on dielectric properties under these varying environmental and test conditions.« less

Efficiency enhancement of semitransparent organic solar cells by using printed dielectric mirrors (Presentation Recording)

NASA Astrophysics Data System (ADS)

Bronnbauer, Carina; Forberich, Karen K.; Guo, Fei; Gasparini, Nicola; Brabec, Christoph J.

2015-09-01

Building integrated thin film solar cells are a strategy for future eco-friendly power generation. Such solar cells have to be semi-transparent, long-term stable and show the potential to be fabricated by a low-cost production process. Organic photovoltaics are a potential candidate because an absorber material with its main absorption in the infrared spectral region where the human eye is not sensitive can be chosen. We can increase the number of absorbed photons, at the same time, keep the transparency almost constant by using a dielectric, wavelength-selective mirror. The mirror reflects only in the absorption regime of the active layer material and shows high transparencies in the spectral region around 550 nm where the human eye is most sensitive. We doctor bladed a fully solution processed dielectric mirror at low temperatures below 80 °C. Both inks, which are printed alternatingly are based on nanoparticles and have a refractive index of 1.29 or 1.98, respectively, at 500 nm. The position and the intensity of the main reflection peak can be easily shifted and thus adjusted to the solar cell absorption spectrum. Eventually, the dielectric mirror was combined with different organic solar cells. For instance, the current increases by 20.6 % while the transparency decreases by 23.7 % for the low band gap absorber DPP and silver nanowires as top electrode. Moreover we proved via experiment and optical simulations, that a variation of the active layer thickness and the position of the main reflection peak affect the transparency and the increase in current.

Through thick and thin: tuning the threshold voltage in organic field-effect transistors.

PubMed

Martínez Hardigree, Josué F; Katz, Howard E

2014-04-15

Organic semiconductors (OSCs) constitute a class of organic materials containing densely packed, overlapping conjugated molecular moieties that enable charge carrier transport. Their unique optical, electrical, and magnetic properties have been investigated for use in next-generation electronic devices, from roll-up displays and radiofrequency identification (RFID) to biological sensors. The organic field-effect transistor (OFET) is the key active element for many of these applications, but the high values, poor definition, and long-term instability of the threshold voltage (V(T)) in OFETs remain barriers to realization of their full potential because the power and control circuitry necessary to compensate for overvoltages and drifting set points decrease OFET practicality. The drifting phenomenon has been widely observed and generally termed "bias stress." Research on the mechanisms responsible for this poor V(T) control has revealed a strong dependence on the physical order and chemical makeup of the interfaces between OSCs and adjacent materials in the OFET architecture. In this Account, we review the state of the art for tuning OFET performance via chemical designs and physical processes that manipulate V(T). This parameter gets to the heart of OFET operation, as it determines the voltage regimes where OFETs are either ON or OFF, the basis for the logical function of the devices. One obvious way to decrease the magnitude and variability of V(T) is to work with thinner and higher permittivity gate dielectrics. From the perspective of interfacial engineering, we evaluate various methods that we and others have developed, from electrostatic poling of gate dielectrics to molecular design of substituted alkyl chains. Corona charging of dielectric surfaces, a method for charging the surface of an insulating material using a constant high-voltage field, is a brute force means of shifting the effective gate voltage applied to a gate dielectric. A gentler and more direct method is to apply surface voltage to dielectric interfaces by direct contact or postprocess biasing; these methods could also be adapted for high throughput printing sequences. Dielectric hydrophobicity is an important chemical property determining the stability of the surface charges. Functional organic monolayers applied to dielectrics, using the surface attachment chemistry made available from "self-assembled" monolayer chemistry, provide local electric fields without any biasing process at all. To the extent that the monolayer molecules can be printed, these are also suitable for high throughput processes. Finally, we briefly consider V(T) control in the context of device integration and reliability, such as the role of contact resistance in affecting this parameter.

Dielectric properties of biomass/biochar mixtures at microwave frequencies

USDA-ARS?s Scientific Manuscript database

Material dielectric properties are important for understanding their response to microwaves. Carbonaceous materials are considered good microwave absorbers and can be mixed with dry biomasses, which are otherwise low- loss materials, to improve the heating efficiency of biomass feedstocks. In this ...

High density circuit technology, part 4

NASA Technical Reports Server (NTRS)

Wade, T. E.

1982-01-01

An accurate study and evaluation of dielectric thin films is conducted in order to find the material or combination of materials which would optimize NASA'S double layer metal process. Emphasis is placed on polyimide dielectrics because of their reported outstanding dielectric characteristics (including electrical, chemical, thermal, and mechanical) and ease of processing, as well as their rapid acceptance by the semiconductor industry.

Microwave meter for rapid, nondestructive determination of in-shell peanut kernel moisture content from dielectric measurements on cleaned and uncleaned pod samples

USDA-ARS?s Scientific Manuscript database

Microwave Sensing provides a means for nondestructively determining the amount of moisture in materials by sensing the dielectric properties of the material. In this study, dielectric properties of Vidalia onions were analyzed for moisture dependence at 13.36 GHz and 23°C for moisture content betwee...

Dielectric characterization of high-performance spaceflight materials

NASA Astrophysics Data System (ADS)

Kleppe, Nathan Alan

As commercial space travel increases, the need for reliable structural health monitoring to predict possible weaknesses or failures of structural materials also increases. Monitoring of polymer-based materials may be achieved through the use of dielectric spectroscopy by comparing permittivity or conductivity measurements performed on a sample in use to that of a pristine sample. Changes in these measured values or of the relaxation frequencies, if present, can indicate chemical or physical changes occurring within the material and the possible need for maintenance/replacement. In this work, we established indicative trends that occur in the dielectric spectra during accelerated aging of various high-performance polymeric materials (EVOH, PEEK, PPS, and UHMWPE). Uses for these materials range from electrical insulation and protective coatings to windows and air- or space-craft parts that may be subject to environmental damage over long-term operation. Accelerated thermal aging and ultraviolet/water-spray cyclic aging were performed in order to investigate the degradation of the aforementioned material. The Havriliak-Negami model was used in the analysis of the measured dielectric spectra in order to obtain the characteristic fit parameters from which aging-related trends were identified. With reference to the literature and from measured FTIR spectra, observations were connected to the underlying mechanisms causing the dielectric relaxations.

An O(N) and parallel approach to integral problems by a kernel-independent fast multipole method: Application to polarization and magnetization of interacting particles

NASA Astrophysics Data System (ADS)

Jiang, Xikai; Li, Jiyuan; Zhao, Xujun; Qin, Jian; Karpeev, Dmitry; Hernandez-Ortiz, Juan; de Pablo, Juan J.; Heinonen, Olle

2016-08-01

Large classes of materials systems in physics and engineering are governed by magnetic and electrostatic interactions. Continuum or mesoscale descriptions of such systems can be cast in terms of integral equations, whose direct computational evaluation requires O(N2) operations, where N is the number of unknowns. Such a scaling, which arises from the many-body nature of the relevant Green's function, has precluded wide-spread adoption of integral methods for solution of large-scale scientific and engineering problems. In this work, a parallel computational approach is presented that relies on using scalable open source libraries and utilizes a kernel-independent Fast Multipole Method (FMM) to evaluate the integrals in O(N) operations, with O(N) memory cost, thereby substantially improving the scalability and efficiency of computational integral methods. We demonstrate the accuracy, efficiency, and scalability of our approach in the context of two examples. In the first, we solve a boundary value problem for a ferroelectric/ferromagnetic volume in free space. In the second, we solve an electrostatic problem involving polarizable dielectric bodies in an unbounded dielectric medium. The results from these test cases show that our proposed parallel approach, which is built on a kernel-independent FMM, can enable highly efficient and accurate simulations and allow for considerable flexibility in a broad range of applications.

An O( N) and parallel approach to integral problems by a kernel-independent fast multipole method: Application to polarization and magnetization of interacting particles

DOE PAGES

Jiang, Xikai; Li, Jiyuan; Zhao, Xujun; ...

2016-08-10

Large classes of materials systems in physics and engineering are governed by magnetic and electrostatic interactions. Continuum or mesoscale descriptions of such systems can be cast in terms of integral equations, whose direct computational evaluation requires O( N 2) operations, where N is the number of unknowns. Such a scaling, which arises from the many-body nature of the relevant Green's function, has precluded wide-spread adoption of integral methods for solution of large-scale scientific and engineering problems. In this work, a parallel computational approach is presented that relies on using scalable open source libraries and utilizes a kernel-independent Fast Multipole Methodmore » (FMM) to evaluate the integrals in O( N) operations, with O( N) memory cost, thereby substantially improving the scalability and efficiency of computational integral methods. We demonstrate the accuracy, efficiency, and scalability of our approach in the context of two examples. In the first, we solve a boundary value problem for a ferroelectric/ferromagnetic volume in free space. In the second, we solve an electrostatic problem involving polarizable dielectric bodies in an unbounded dielectric medium. Lastly, the results from these test cases show that our proposed parallel approach, which is built on a kernel-independent FMM, can enable highly efficient and accurate simulations and allow for considerable flexibility in a broad range of applications.« less

Charging and breakdown in amorphous dielectrics: Phenomenological modeling approach and applications

NASA Astrophysics Data System (ADS)

Palit, Sambit

Amorphous dielectrics of different thicknesses (nm to mm) are used in various applications. Low temperature processing/deposition of amorphous thin-film dielectrics often result in defect-states or electronic traps. These traps are responsible for increased leakage currents and bulk charge trapping in many associated applications. Additional defects may be generated during regular usage, leading to electrical breakdown. Increased leakage currents, charge trapping and defect generation/breakdown are important and pervasive reliability concerns in amorphous dielectrics. We first explore the issue of charge accumulation and leakage in amorphous dielectrics. Historically, charge transport in amorphous dielectrics has been presumed, depending on the dielectric thickness, to be either bulk dominated (Frenkel-Poole (FP) emission) or contact dominated (Fowler-Nordheim tunneling). We develop a comprehensive dielectric charging modeling framework which solves for the transient and steady state charge accumulation and leakage currents in an amorphous dielectric, and show that for intermediate thickness dielectrics, the conventional assumption of FP dominated current transport is incorrect, and may lead to false extraction of dielectric parameters. We propose an improved dielectric characterization methodology based on an analytical approximation of our model. Coupled with ab-initio computed defect levels, the dielectric charging model explains measured leakage currents more accurately with lesser empiricism. We study RF-MEMS capacitive switches as one of the target applications of intermediate thickness amorphous dielectrics. To achieve faster analysis and design of RF-MEMS switches in particular, and electro-mechanical actuators in general, we propose a set of fundamental scaling relationships which are independent of specific physical dimensions and material properties; the scaling relationships provide an intrinsic classification of all electro-mechanical actuators. However, RF-MEMS capacitive switches are plagued by the reliability issue of temporal shifts of actuation voltages due to dielectric charge accumulation, often resulting in failure due to membrane stiction. Using the dielectric charging model, we show that in spite of unpredictable roughness of deposited dielectrics, there are predictable shifts in actuation voltages due to dielectric charging in RF-MEMS switches. We also propose a novel non-obtrusive, non-contact, fully electronic resonance based technique to characterize charging driven actuation shifts in RF-MEMS switches which overcomes limitations in conventionally used methods. Finally, we look into the issue of defect generation and breakdown in thick polymer dielectrics. Polymer materials often face premature electrical breakdown due to high electric fields and frequencies, and exposure to ambient humidity conditions. Using a field-driven correlated defect generation model, coupled with a model for temperature rise due to dielectric heating at AC stresses, we explain measured trends in time-to-breakdown and breakdown electric fields in polymer materials. Using dielectric heating we are able to explain the observed lifetime and dielectric strength reduction with increasing dielectric thicknesses. Performing lifetime measurements after exposure to controlled humidity conditions, we find that moisture ingress into a polymer material reduces activation barriers for chain breakage and increases dielectric heating. Overall, this thesis develops a comprehensive framework of dielectric charging, leakage and degradation of insulators of different thicknesses that have broad applications in multiple technologies.

Boron nitride as two dimensional dielectric: Reliability and dielectric breakdown

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ji, Yanfeng; Pan, Chengbin; Hui, Fei

2016-01-04

Boron Nitride (BN) is a two dimensional insulator with excellent chemical, thermal, mechanical, and optical properties, which make it especially attractive for logic device applications. Nevertheless, its insulating properties and reliability as a dielectric material have never been analyzed in-depth. Here, we present the first thorough characterization of BN as dielectric film using nanoscale and device level experiments complementing with theoretical study. Our results reveal that BN is extremely stable against voltage stress, and it does not show the reliability problems related to conventional dielectrics like HfO{sub 2}, such as charge trapping and detrapping, stress induced leakage current, and untimelymore » dielectric breakdown. Moreover, we observe a unique layer-by-layer dielectric breakdown, both at the nanoscale and device level. These findings may be of interest for many materials scientists and could open a new pathway towards two dimensional logic device applications.« less

PLZT capacitor and method to increase the dielectric constant

DOEpatents

Taylor, Ralph S.; Fairchild, Manuel Ray; Balachjandran, Uthamalingam; Lee, Tae H.

2017-12-12

A ceramic-capacitor includes a first electrically-conductive-layer, a second electrically-conductive-layer arranged proximate to the first electrically-conductive-layer, and a dielectric-layer interposed between the first electrically-conductive-layer and the second electrically-conductive-layer. The dielectric-layer is formed of a lead-lanthanum-zirconium-titanate material (PLZT), wherein the PLZT is characterized by a dielectric-constant greater than 125, when measured at 25 degrees Celsius and zero Volts bias, and an excitation frequency of ten-thousand Hertz (10 kHz). A method for increasing a dielectric constant of the lead-lanthanum-zirconium-titanate material (PLZT) includes the steps of depositing PLZT to form a dielectric-layer of a ceramic-capacitor, and heating the ceramic-capacitor to a temperature not greater than 300.degree. C.

The Charging of Composites in the Space Environment

NASA Technical Reports Server (NTRS)

Czepiela, Steven A.

1997-01-01

Deep dielectric charging and subsequent electrostatic discharge in composite materials used on spacecraft have become greater concerns since composite materials are being used more extensively as main structural components. Deep dielectric charging occurs when high energy particles penetrate and deposit themselves in the insulating material of spacecraft components. These deposited particles induce an electric field in the material, which causes the particles to move and thus changes the electric field. The electric field continues to change until a steady state is reached between the incoming particles from the space environment and the particles moving away due to the electric field. An electrostatic discharge occurs when the electric field is greater than the dielectric strength of the composite material. The goal of the current investigation is to investigate deep dielectric charging in composite materials and ascertain what modifications have to be made to the composite properties to alleviate any breakdown issues. A 1-D model was created. The space environment, which is calculated using the Environmental Workbench software, the composite material properties, and the electric field and voltage boundary conditions are input into the model. The output from the model is the charge density, electric field, and voltage distributions as functions of the depth into the material and time. Analysis using the model show that there should be no deep dielectric charging problem with conductive composites such as carbon fiber/epoxy. With insulating materials such as glass fiber/epoxy, Kevlar, and polymers, there is also no concern of deep dielectric charging problems with average day-to-day particle fluxes. However, problems can arise during geomagnetic substorms and solar particle events where particle flux levels increase by several orders of magnitude, and thus increase the electric field in the material by several orders of magnitude. Therefore, the second part of this investigation was an experimental attempt to measure the continuum electrical properties of a carbon fiber/epoxy composite, and to create a composite with tailorable conductivity without affecting its mechanical properties. The measurement of the conductivity and dielectric strength of carbon fiber/epoxy composites showed that these properties are surface layer dominated and difficult to measure. In the second experimental task, the conductivity of a glass fiber/epoxy composite was increased by 3 orders of magnitude, dielectric constant was increased approximately by a factor of 16, with minimal change to the mechanical properties, by adding conductive carbon black to the epoxy.

Moisture influence on the dielectric behavior of foods

USDA-ARS?s Scientific Manuscript database

The importance of dielectric properties of food materials is discussed with respect to their influence on the heating of materials by radio-frequency and microwave energy and their use for rapid, nondestructive sensing of quality characteristics of such materials. Data are presented graphically sho...

Dielectric Performance of a High Purity HTCC Alumina at High Temperatures - a Comparison Study with Other Polycrystalline Alumina

NASA Technical Reports Server (NTRS)

Chen, Liangyu

2014-01-01

A very high purity (99.99+%) high temperature co-fired ceramic (HTCC) alumina has recently become commercially available. The raw material of this HTCC alumina is very different from conventional HTCC alumina, and more importantly there is no glass additive in this alumina material for co-firing processing. Previously, selected HTCC and LTCC (low temperature co-fired ceramic) alumina materials were evaluated at high temperatures as dielectric and compared to a regularly sintered 96% polycrystalline alumina (96% Al2O3), where 96% alumina was used as the benchmark. A prototype packaging system based on regular 96% alumina with Au thickfilm metallization successfully facilitated long term testing of high temperature silicon carbide (SiC) electronic devices for over 10,000 hours at 500 C. In order to evaluate this new high purity HTCC alumina for possible high temperature packaging applications, the dielectric properties of this HTCC alumina substrate were measured and compared with those of 96% alumina and a previously tested LTCC alumina from room temperature to 550 C at frequencies of 120 Hz, 1 KHz, 10 KHz, 100 KHz, and 1 MHz. A parallel-plate capacitive device with dielectric of the HTCC alumina and precious metal electrodes were used for measurements of the dielectric constant and dielectric loss of the co-fired alumina material in the temperature and frequency ranges. The capacitance and AC parallel conductance of the capacitive device were directly measured by an AC impedance meter, and the dielectric constant and parallel AC conductivity of the dielectric were calculated from the capacitance and conductance measurement results. The temperature and frequency dependent dielectric constant, AC conductivity, and dissipation factor of the HTCC alumina substrate are presented and compared to those of 96% alumina and a selected LTCC alumina. Other technical advantages of this new co-fired material for possible high packaging applications are also discussed.

Preliminary investigation of polystyrene/MoS{sub 2}-Oleylamine polymer composite for potential application as low-dielectric material in microelectronics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Landi, Giovanni, E-mail: glandi@unisa.it; Department of Industrial Engineering, University of Salerno, Via G. Paolo II 132, 84084 Fisciano; Altavilla, Claudia

2015-12-17

Insulating materials play a vital role in the design and performance of electrical systems for both steady and transient state conditions. Among the other properties, also in this field, polymer nanocomposites promise to offer exciting improvements. Many studies in the last decade has witnessed significant developments in the area of nano-dielectric materials and significant effects of nano-scale fillers on electric, thermal and mechanical properties of polymeric materials have been observed. However, the developments of new and advanced materials to be used the miniaturization of electronic devices fabrication require extensive studies on electrical insulation characteristics of these materials before they canmore » be used in commercial systems. In this work, Polystyrene (PS) composites were prepared by the blend solution method using MoS{sub 2}@Oleylamine nanosheets as filler. The dielectric properties of the resulting comoposite have been investigated at 300K and in the frequency range between 1000 Hz and 1 MHz. The addition of the MoS{sub 2}@Oleylamine nanosheets leads to a decreasing of the relative dielectric constant and of the electrical conductivity measured in the voltage range between ±500V. Thanks to a possibility to tune the electrical permittivity with the control of MoS{sub 2} concentration, these materials could be used as a low-dielectric material in the microelectronics applications.« less

Analytical scanning evanescent microwave microscope and control stage

DOEpatents

Xiang, Xiao-Dong; Gao, Chen; Duewer, Fred; Yang, Hai Tao; Lu, Yalin

2013-01-22

A scanning evanescent microwave microscope (SEMM) that uses near-field evanescent electromagnetic waves to probe sample properties is disclosed. The SEMM is capable of high resolution imaging and quantitative measurements of the electrical properties of the sample. The SEMM has the ability to map dielectric constant, loss tangent, conductivity, electrical impedance, and other electrical parameters of materials. Such properties are then used to provide distance control over a wide range, from to microns to nanometers, over dielectric and conductive samples for a scanned evanescent microwave probe, which enable quantitative non-contact and submicron spatial resolution topographic and electrical impedance profiling of dielectric, nonlinear dielectric and conductive materials. The invention also allows quantitative estimation of microwave impedance using signals obtained by the scanned evanescent microwave probe and quasistatic approximation modeling. The SEMM can be used to measure electrical properties of both dielectric and electrically conducting materials.

Analytical scanning evanescent microwave microscope and control stage

DOEpatents

Xiang, Xiao-Dong; Gao, Chen; Duewer, Fred; Yang, Hai Tao; Lu, Yalin

2009-06-23

A scanning evanescent microwave microscope (SEMM) that uses near-field evanescent electromagnetic waves to probe sample properties is disclosed. The SEMM is capable of high resolution imaging and quantitative measurements of the electrical properties of the sample. The SEMM has the ability to map dielectric constant, loss tangent, conductivity, electrical impedance, and other electrical parameters of materials. Such properties are then used to provide distance control over a wide range, from to microns to nanometers, over dielectric and conductive samples for a scanned evanescent microwave probe, which enable quantitative non-contact and submicron spatial resolution topographic and electrical impedance profiling of dielectric, nonlinear dielectric and conductive materials. The invention also allows quantitative estimation of microwave impedance using signals obtained by the scanned evanescent microwave probe and quasistatic approximation modeling. The SEMM can be used to measure electrical properties of both dielectric and electrically conducting materials.

Microwave measurement and modeling of the dielectric properties of vegetation

NASA Astrophysics Data System (ADS)

Shrestha, Bijay Lal

Some of the important applications of microwaves in the industrial, scientific and medical sectors include processing and treatment of various materials, and determining their physical properties. The dielectric properties of the materials of interest are paramount irrespective of the applications, hence, a wide range of materials covering food products, building materials, ores and fuels, and biological materials have been investigated for their dielectric properties. However, very few studies have been conducted towards the measurement of dielectric properties of green vegetations, including commercially important plant crops such as alfalfa. Because of its high nutritional value, there is a huge demand for this plant and its processed products in national and international markets, and an investigation into the possibility of applying microwaves to improve both the net yield and quality of the crop can be beneficial. Therefore, a dielectric measurement system based upon the probe reflection technique has been set up to measure dielectric properties of green plants over a frequency range from 300 MHz to 18 GHz, moisture contents from 12%, wet basis to 79%, wet basis, and temperatures from -15°C to 30°C. Dielectric properties of chopped alfalfa were measured with this system over frequency range of 300 MHz to 18 GHz, moisture content from 11.5%, wet basis, to 73%, wet basis, and density over the range from 139 kg m-3 to 716 kg m-3 at 23°C. The system accuracy was found to be +/-6% and +/-10% in measuring the dielectric constant and loss factor respectively. Empirical, semi empirical and theoretical models that require only moisture content and operating frequency were determined to represent the dielectric properties of both leaves and stems of alfalfa at 22°C. The empirical models fitted the measured dielectric data extremely well. The root mean square error (RMSE) and the coefficient of determination (r2) for dielectric constant and loss factor of leaves were 0.89 and 0.99, and 0.52 and 0.99 respectively. The RMSE and r2 values for dielectric constant and loss factor of stems were 0.89 and 0.99, and 0.77 and 0.99 respectively. Among semi empirical or theoretical models, Power law model showed better performance (RMSE = 1.78, r2 = 0.96) in modeling dielectric constant of leaves, and Debye-ColeCole model was more appropriate (RMSE = 1.23, r2 = 0.95) for the loss factor. For stems, the Debye-ColeCole models (developed on an assumption that they do not shrink as they dry) were found to be the best models to calculate the dielectric constant with RMSE 0.53 and r2 = 0.99, and dielectric loss factor with RMSE = 065 and r2 = 0.95. (Abstract shortened by UMI.)

40 CFR 280.20 - Performance standards for new UST systems.

Code of Federal Regulations, 2010 CFR

2010-07-01

... protected in the following manner: (i) The tank is coated with a suitable dielectric material; (ii) Field... suitable dielectric material; (ii) Field-installed cathodic protection systems are designed by a corrosion...

40 CFR 280.20 - Performance standards for new UST systems.

Code of Federal Regulations, 2011 CFR

2011-07-01

... protected in the following manner: (i) The tank is coated with a suitable dielectric material; (ii) Field... suitable dielectric material; (ii) Field-installed cathodic protection systems are designed by a corrosion...

Template-guided self-assembly of discrete optoplasmonic molecules and extended optoplasmonic arrays

DOE PAGES

Reinhard, Björn M.; Ahn, Wonmi; Hong, Yan; ...

2015-10-06

The integration of metallic and dielectric building blocks into optoplasmonic structures creates new electromagnetic systems in which plasmonic and photonic modes can interact in the near-, intermediate- and farfield. The morphology-dependent electromagnetic coupling between the different building blocks in these hybrid structures provides a multitude of opportunities for controlling electromagnetic fields in both spatial and frequency domain as well as for engineering the phase landscape and the local density of optical states. Control over any of these properties requires, however, rational fabrication approaches for well-defined metal-dielectric hybrid structures. Template-guided self-assembly is a versatile fabrication method capable of integrating metallic andmore » dielectric components into discrete optoplasmonic structures, arrays, or metasurfaces. The structural flexibility provided by the approach is illustrated by two representative implementations of optoplasmonic materials discussed in this review. In optoplasmonic atoms or molecules optical microcavities (OMs) serve as whispering gallery mode resonators that provide a discrete photonic mode spectrum to interact with plasmonic nanostructures contained in the evanescent fields of the OMs. In extended hetero-nanoparticle arrays in-plane scattered light induces geometry-dependent photonic resonances that mix with the localized surface plasmon resonances of the metal nanoparticles. As a result, we characterize the fundamental electromagnetic working principles underlying both optoplasmonic approaches and review the fabrication strategies implemented to realize them.« less

Template-guided self-assembly of discrete optoplasmonic molecules and extended optoplasmonic arrays

DOE Office of Scientific and Technical Information (OSTI.GOV)

Reinhard, Björn M.; Ahn, Wonmi; Hong, Yan

The integration of metallic and dielectric building blocks into optoplasmonic structures creates new electromagnetic systems in which plasmonic and photonic modes can interact in the near-, intermediate- and farfield. The morphology-dependent electromagnetic coupling between the different building blocks in these hybrid structures provides a multitude of opportunities for controlling electromagnetic fields in both spatial and frequency domain as well as for engineering the phase landscape and the local density of optical states. Control over any of these properties requires, however, rational fabrication approaches for well-defined metal-dielectric hybrid structures. Template-guided self-assembly is a versatile fabrication method capable of integrating metallic andmore » dielectric components into discrete optoplasmonic structures, arrays, or metasurfaces. The structural flexibility provided by the approach is illustrated by two representative implementations of optoplasmonic materials discussed in this review. In optoplasmonic atoms or molecules optical microcavities (OMs) serve as whispering gallery mode resonators that provide a discrete photonic mode spectrum to interact with plasmonic nanostructures contained in the evanescent fields of the OMs. In extended hetero-nanoparticle arrays in-plane scattered light induces geometry-dependent photonic resonances that mix with the localized surface plasmon resonances of the metal nanoparticles. As a result, we characterize the fundamental electromagnetic working principles underlying both optoplasmonic approaches and review the fabrication strategies implemented to realize them.« less

All 2D, high mobility, flexible, transparent thin film transistor

DOEpatents

Das, Saptarshi; Sumant, Anirudha V.; Roelofs, Andreas

2017-01-17

A two-dimensional thin film transistor and a method for manufacturing a two-dimensional thin film transistor includes layering a semiconducting channel material on a substrate, providing a first electrode material on top of the semiconducting channel material, patterning a source metal electrode and a drain metal electrode at opposite ends of the semiconducting channel material from the first electrode material, opening a window between the source metal electrode and the drain metal electrode, removing the first electrode material from the window located above the semiconducting channel material providing a gate dielectric above the semiconducting channel material, and providing a top gate above the gate dielectric, the top gate formed from a second electrode material. The semiconducting channel material is made of tungsten diselenide, the first electrode material and the second electrode material are made of graphene, and the gate dielectric is made of hexagonal boron nitride.

Diagnostics of Dielectric Materials with Several Relaxation Times

NASA Astrophysics Data System (ADS)

Karpov, A. G.; Klemeshev, V. A.

2018-04-01

A set of means for detection and preprocessing of dielectrometric information has been suggested for studying the polarization/depolarization of dielectrics. Special attention has been paid to the processing of dielectrometric data for inhomogeneous materials using dielectric diagrams. Rapid analysis has been carried out the results of which can be used as initial approximations in more accurate (more complicated and time-consuming) iterative algorithms for model fitting.

Dielectric properties of magnetorheological elastomers with different microstructure

NASA Astrophysics Data System (ADS)

Moucka, R.; Sedlacik, M.; Cvek, M.

2018-03-01

Composite materials containing magnetic particles organised within the polymer matrix by the means of an external magnetic field during the curing process were prepared, and their dielectric properties were compared with their isotropic analogues of the same filler concentration but homogeneous spatial distribution. A substantial dielectric response observed for anisotropic systems in a form of relaxation processes was explained as charge transport via the mechanism of variable range hopping. The changes in registered relaxations' critical frequency and shape of dielectric spectra with the filler concentration were discussed in terms of decreasing anisotropy of the system. The knowledge of the dielectric response of studied systems is essential for their practical applications such as piezoresistive sensors or radio-absorbing materials.

Colossal permittivity materials: Doping for superior dielectrics

NASA Astrophysics Data System (ADS)

Homes, Christopher C.; Vogt, Thomas

2013-09-01

The search for materials with colossal permittivity for use in capacitors has been met with limited success. A newly discovered co-doped titanium oxide material has an extremely high permittivity and negligible dielectric losses, and is likely to enable further scaling in electronic and energy-storage devices.

Giant Electrocaloric Effect in Ferroelectrics with Tailored Polaw-Nanostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Qiming

2015-06-24

Electrocaloric effect (ECE) is the temperature and/or entropy change in a dielectric material caused by an electric field induced polarization change. Although ECE has been studied since 1930s, the very small ECE observed in earlier studies in bulk materials before 2007 makes it not attractive for practical cooling applications. The objectives of this DOE program are to carry out a systematical scientific research on the entropy change and ECE in polar-dielectrics, especially ferroelectrics based on several fundamental hypotheses and to search for answers on a few scientific questions. Especially, this research program developed a series of polar-dielectric materials with controlledmore » nano- and meso-structures and carried out studies on how these structures affect the polar-ordering, correlations, energy landscapes, and consequently the entropy states at different phases and ECE. The key hypotheses of the program include: (i) Whether a large ECE can be obtained near the ferroelectric-paraelectric (FE-PE) transition in properly designed ferroelectrics which possess large polarization P and large ß (the coefficient in the thermodynamic Landau theory where the Gibbs free energy G = G = G 0+ ½ a P 2 +1/4 b P 4 + 1/6 c P 6 – EP, and a = ß (T-T c), where b,c,ß and Tc are constants)? (ii) What determines/determine ß? Whether a ferroelectric material with built-in disorders, which disrupt the polar-correlations and enabling a large number of local polar-states, such as a properly designed ferroelectric relaxor, can achieve a large ECE? (iii) How to design a ferroelectric material which has flat energy landscape so that the energy barriers for switching among different phases are vanishingly small? What are the necessary conditions to maximize the number of coexisting phases? (iv) How to design ferroelectric materials with a large tunable dielectric response? That is, at zero electric field, the material possesses very low polar-correlation and hence a very small dielectric constant, under the application of electric field, the material develops long range polar-correlation and hence a high dielectric response. Studying and developing these materials will deepen our understanding on the polarization responses in strongly coupled materials and the roles of molecular and nano, meso-, and micro-scale defects and structures on the polarization responses. On the application front, besides ECE, these dielectrics will also have great impact on micro-electronics and communications. (v) The multi-field effect, besides the electric, elastic and even magnetic effects, could be made use of to tune the energy landscape of polar-materials and hence enhance the ECE. Hence the question is what are the suitable material systems to develop and maximize the multi-field effects? (vi) Besides solid dielectric, liquid dielectrics with properly designed molecular structures and dipolar coupling can also exhibit a large ECE near the dipolar order-disorder transition. The study of order-disorder transition and their influence on entropy change and ECE will provide additional avenue to study dielectrics and understand relationship between the polar-ordering and dipolar entropy in dielectrics. (vii) Besides the regular ECE in which applying an electric field will induce dipolar ordering, there are dielectric material systems which can exhibit negative ECE in which the applied field will reduce the dipolar ordering and anomalous ECE in which applying an electric field pulse will generate cooling only. The question is how to control and balance the nano- and meso-scale polar coupling in dielectrics to achieve such effects? ECE in dielectrics provides an interesting and effective avenue to probe the polar-correlation in dielectrics. Thus the study of ECE in polar-dielectrics, besides the application values, will also deepen our understanding of strongly coupled materials systems, phase transitions, and materials systems with nano- and meso-scale disorders. Through the efforts of this DoE program, we have developed understandings for many questions and materials approaches for many hypotheses listed above. The major accomplishments include: (i) The first one to show that a giant ECE can be obtained in bulk materials of ferroelectric P(VDF-TrFE) copolymer, which has a large ß coefficient and high polarization, near FE-PE transition.[1,3,12] (ii) The first who developed the theoretical analyses on the upper bound of dipolar entropy change in polar-materials and the general approach to maximize the coexisting phases with vanishingly small switching fields among the coexisting phases[10,23] Experimental results confirm these theoretical predictions.[24] (iii) The first to show that the relaxor ferroelectrics, due to built-in defects structures at nano- and meso scale, exhibit a giant ECE over a broad temperature range.[1,3,7,14] (iv) The first to show that a large ECE can be obtained near order-disorder transition in dielectric fluids such as liquid crystals with large dielectric anisotropy. Also the study developed a general approach for developing dielectric fluids to achieve a large electric field induced entropy change.[26] (v) We are starting to explore the multi-field effect (multiferroic effect) in nanocomposites in which there exist large dielectric contrasts between the matrix and nanofilelrs and showed that a significantly enhanced ECE compared with polymer matrix.[36] (vi) By facially tuning the nano- and meso-scale dipolar coupling, we are the first to show that an anomalous ECE can be obtained in a relaxor/normal ferroelectric blend.[39] (vii) Introduced and demonstrated that the internal bias field approach can be effective in enhancing the EC response at low electric field. The result is significant since for practical applications, a low applied field is highly desired. (viii) A high sensitivity ECE characterization system has been developed. This program has made major contributions to the advancement of the EC materials and understandings of EC phenomena. To reflect the advancement in the EC materials development and scientific understandings on ECE through in this time period (from Sept. 1, 2007 to May 2015), this final report is written based on the reports complied each year through the program. Some early works on the ECE which were obtained using the indirect method are not included in this report.« less

Theoretical and Numerical Approaches for Determining the Reflection and Transmission Coefficients of OPEFB-PCL Composites at X-Band Frequencies

PubMed Central

Ahmad, Ahmad F.; Abbas, Zulkifly; Obaiys, Suzan J.; Ibrahim, Norazowa; Hashim, Mansor; Khaleel, Haider

2015-01-01

Bio-composites of oil palm empty fruit bunch (OPEFB) fibres and polycaprolactones (PCL) with a thickness of 1 mm were prepared and characterized. The composites produced from these materials are low in density, inexpensive, environmentally friendly, and possess good dielectric characteristics. The magnitudes of the reflection and transmission coefficients of OPEFB fibre-reinforced PCL composites with different percentages of filler were measured using a rectangular waveguide in conjunction with a microwave vector network analyzer (VNA) in the X-band frequency range. In contrast to the effective medium theory, which states that polymer-based composites with a high dielectric constant can be obtained by doping a filler with a high dielectric constant into a host material with a low dielectric constant, this paper demonstrates that the use of a low filler percentage (12.2%OPEFB) and a high matrix percentage (87.8%PCL) provides excellent results for the dielectric constant and loss factor, whereas 63.8% filler material with 36.2% host material results in lower values for both the dielectric constant and loss factor. The open-ended probe technique (OEC), connected with the Agilent vector network analyzer (VNA), is used to determine the dielectric properties of the materials under investigation. The comparative approach indicates that the mean relative error of FEM is smaller than that of NRW in terms of the corresponding S21 magnitude. The present calculation of the matrix/filler percentages endorses the exact amounts of substrate utilized in various physics applications. PMID:26474301

Gas storage and separation by electric field swing adsorption

DOEpatents

Currier, Robert P; Obrey, Stephen J; Devlin, David J; Sansinena, Jose Maria

2013-05-28

Gases are stored, separated, and/or concentrated. An electric field is applied across a porous dielectric adsorbent material. A gas component from a gas mixture may be selectively separated inside the energized dielectric. Gas is stored in the energized dielectric for as long as the dielectric is energized. The energized dielectric selectively separates, or concentrates, a gas component of the gas mixture. When the potential is removed, gas from inside the dielectric is released.

Reaction formulation for radiation and scattering from plates, corner reflectors and dielectric-coated cylinders

NASA Technical Reports Server (NTRS)

Wang, N. N.

1974-01-01

The reaction concept is employed to formulate an integral equation for radiation and scattering from plates, corner reflectors, and dielectric-coated conducting cylinders. The surface-current density on the conducting surface is expanded with subsectional bases. The dielectric layer is modeled with polarization currents radiating in free space. Maxwell's equation and the boundary conditions are employed to express the polarization-current distribution in terms of the surface-current density on the conducting surface. By enforcing reaction tests with an array of electric test sources, the moment method is employed to reduce the integral equation to a matrix equation. Inversion of the matrix equation yields the current distribution, and the scattered field is then obtained by integrating the current distribution. The theory, computer program and numerical results are presented for radiation and scattering from plates, corner reflectors, and dielectric-coated conducting cylinders.

Polydopamine-based concentric nanoshells with programmable architectures and plasmonic properties.

PubMed

Choi, Chun Kit K; Zhuo, Xiaolu; Chiu, Yee Ting Elaine; Yang, Hongrong; Wang, Jianfang; Choi, Chung Hang Jonathan

2017-11-09

Nanoshells, classically comprising gold as the metallic component and silica as the dielectric material, are important for fundamental studies in nanoplasmonics. They also empower a myriad of applications, including sensing, energy harvesting, and cancer therapy. Yet, laborious preparation precludes the development of next-generation nanoshells with structural complexity, compositional diversity, and tailorable plasmonic behaviors. This work presents an efficient approach to the bottom-up assembly of concentric nanoshells. By employing polydopamine as the dielectric material and exploiting its intrinsic adhesiveness and pH-tunable surface charge, the growth of each shell only takes 3-4 hours at room temperature. A series of polydopamine-based concentric nanoshells with programmable nanogap thickness, elemental composition (gold and silver), and geometrical configuration (number of layers) is prepared, followed by extensive structural characterization. Four of the silver-containing nanostructures are newly reported. Systematic investigations into the plasmonic properties of concentric nanoshells as a function of their structural parameters further reveal multiple Fano resonances and local-field "hot spots", infrequently reported plasmonic features for individual nanostructures fabricated using bottom-up wet chemistry. These results establish materials design rules for engineering complex plasmon-based systems originating from the integration of multiple plasmonic elements into defined locations within a compact nanostructure.

Harnessing Electrostatic Forces to Grow Bio-inspired Hierarchical Vascular Networks

NASA Astrophysics Data System (ADS)

Behler, Kristopher; Melrose, Zachary; Schott, Andrew; Wetzel, Eric

2012-02-01

Vascular networks provide a system for fluid distribution. Artificial vascular materials with enhanced properties are currently being developed that could ultimately be integrated into systems reliant upon fluid transport while retaining their structural properties. An uninterrupted and controllable supply of liquid is optimal for many applications such as continual self-healing materials, in-situ delivery of index matched fluids, thermal management and drug delivery systems could benefit from a bio-inspired vascular approach that combines complex network geometries with minimal processing parameters. Two such approaches to induce vascular networks are electrohydrodynamic viscous fingering (EHVF) and electrical treeing (ET). EHVF is a phenomenon that occurs when a low viscosity liquid is forced through a high viscosity fluid or matrix, resulting in branches due to capillary and viscous forces in the high viscosity material. By applying voltages of 0 -- 60 kV, finger diameter is reduced. ET is the result of partial discharges in a dielectric material. In the vicinity of a small diameter electrode, the local electric field is greater than the global dielectric strength, causing a localized, step-wise, breakdown to occur forming a highly branched interconnected structure. ET is a viable method to produce networks on a smaller, micron, scale than the products of the EHVF method.

Biaxial experimental and analytical characterization of a dielectric elastomer

NASA Astrophysics Data System (ADS)

Helal, Alexander; Doumit, Marc; Shaheen, Robert

2018-01-01

Electroactive polymers (EAPs) have emerged as a strong contender for use in low-cost efficient actuators in multiple applications especially related to biomimetic and mobile-assistive devices. Dielectric elastomers (DE), a subcategory of these smart materials, have been of particular interest due to their large achievable deformation and favourable mechanical and electro-mechanical properties. Previous work has been completed to understand the behaviour of these materials; however, their properties require further investigation to properly integrate them into real-world applications. In this study, a biaxial tensile experimental evaluation of 3M™ VHB 4905 and VHB 4910 is presented with the purpose of illustrating the elastomers' transversely isotropic mechanical behaviours. These tests were applied to both tapes for equibiaxial stretch rates ranging between 0.025 and 0.300 s-1. Subsequently, a dynamic planar biaxial visco-hyperelastic constitutive relationship was derived from a Kelvin-Voigt rheological model and the general Hooke's law for transversely isotropic materials. The model was then fitted to the experimental data to obtain three general material parameters for either tapes. The model's ability to predict tensile stress response and internal energy dissipation, with respect to experimental data, is evaluated with good agreement. The model's ability to predict variations in mechanical behaviour due to changes in kinematic variables is then illustrated for different conditions.

Impact of radiations on the electromechanical properties of materials and on the piezoresistive and capacitive transduction mechanisms used in microsystems

NASA Astrophysics Data System (ADS)

Francis, Laurent A.; Gkotsis, Petros; Kilchytska, Valeriya; Tang, Xiaohui; Druart, Sylvain; Raskin, Jean-Pierre; Flandre, Denis

2013-03-01

The impact of different types of radiation on the electromechanical properties of materials used in microfabrication and on the capacitive and piezoresistive transduction mechanisms of MEMS is investigated. MEMS technologies could revolutionize avionics, satellite and space applications provided that the stress conditions which can compromise the reliability of microsystems in these environments are well understood. Initial tests with MEMS revealed a vulnerability of some types of devices to radiation induced dielectric charging, a physical mechanism which also affects microelectronics, however integration of novel functional materials in microfabrication and the current trend to substitute SiO2 with high-k dielectrics in ICs pose new questions regarding reliability in radiation environments. The performance of MEMS devices with moving parts could also degrade due to radiation induced changes in the mechanical properties of the materials. It is thus necessary to investigate the effects of radiation on the properties of thin films used in microfabrication and here we report on tests with γ, high energy protons and fast neutrons radiation. Prototype SOI based MEMS magnetometers which were developed in UCL are also used as test vehicles to investigate radiation effects on the reliability of magnetically actuated and capacitively coupled MEMS.

Control of spontaneous emission of quantum dots using correlated effects of metal oxides and dielectric materials

NASA Astrophysics Data System (ADS)

Sadeghi, S. M.; Wing, W. J.; Gutha, R. R.; Capps, L.

2017-03-01

We study the emission dynamics of semiconductor quantum dots in the presence of the correlated impact of metal oxides and dielectric materials. For this we used layered material structures consisting of a base substrate, a dielectric layer, and an ultrathin layer of a metal oxide. After depositing colloidal CdSe/ZnS quantum dots on the top of the metal oxide, we used spectral and time-resolved techniques to show that, depending on the type and thickness of the dielectric material, the metal oxide can characteristically change the interplay between intrinsic excitons, defect states, and the environment, offering new material properties. Our results show that aluminum oxide, in particular, can strongly change the impact of amorphous silicon on the emission dynamics of quantum dots by balancing the intrinsic near band emission and fast trapping of carriers. In such a system the silicon/aluminum oxide charge barrier can lead to large variation of the radiative lifetime of quantum dots and control of the photo-ejection rate of electrons in quantum dots. The results provide unique techniques to investigate and modify physical properties of dielectrics and manage optical and electrical properties of quantum dots.

Control of spontaneous emission of quantum dots using correlated effects of metal oxides and dielectric materials.

PubMed

Sadeghi, S M; Wing, W J; Gutha, R R; Capps, L

2017-03-03

We study the emission dynamics of semiconductor quantum dots in the presence of the correlated impact of metal oxides and dielectric materials. For this we used layered material structures consisting of a base substrate, a dielectric layer, and an ultrathin layer of a metal oxide. After depositing colloidal CdSe/ZnS quantum dots on the top of the metal oxide, we used spectral and time-resolved techniques to show that, depending on the type and thickness of the dielectric material, the metal oxide can characteristically change the interplay between intrinsic excitons, defect states, and the environment, offering new material properties. Our results show that aluminum oxide, in particular, can strongly change the impact of amorphous silicon on the emission dynamics of quantum dots by balancing the intrinsic near band emission and fast trapping of carriers. In such a system the silicon/aluminum oxide charge barrier can lead to large variation of the radiative lifetime of quantum dots and control of the photo-ejection rate of electrons in quantum dots. The results provide unique techniques to investigate and modify physical properties of dielectrics and manage optical and electrical properties of quantum dots.

Dielectric Spectroscopy Analysis of Aged EVOH films with Application to Deterioration of Food Packaging Materials

NASA Astrophysics Data System (ADS)

Hoeller, Timothy

2007-06-01

Samples of EVOH films from compositions of 29 - 44 mol% ethylene content were exposed to thermal aging with and without light exposure. The results of Dielectric Spectroscopy on select samples showed Cole-Cole plots of skewed dielectric constant indicating multiple distributions of dipole relaxation times. The onset for decreases in dielectric response occurs earlier in samples exposed to elevated temperature under light exposure. Lower permittivity is exhibited in samples of higher ethylene content. Results from heat exposed samples are presented. Colorimetric analysis indicates only a slight film yellowing in one case. Raman spectroscopy on untreated films discerns changes in the C-C-O stretch associated with the alcohol. The effects of aging on microstructure may cause hindrance of molecular motion from moisture desorption. Slight material degradation occurs from film hardening presumably due to crosslinking. An electrical circuit model of the conduction processes associated with the EVOH films is presented. Dielectric analysis shows promise for monitoring material changes related to deterioration. We are also using these methods to understand Fluorescence Imaging which has been recently released for paper and plastic materials analysis. Future work may include refinement of these techniques for identification of changes in material properties correlated to packaging material barrier resistance.

Electrode/Dielectric Strip For High-Energy-Density Capacitor

NASA Technical Reports Server (NTRS)

Yen, Shiao-Ping S.

1994-01-01

Improved unitary electrode/dielectric strip serves as winding in high-energy-density capacitor in pulsed power supply. Offers combination of qualities essential for high energy density: high permittivity of dielectric layers, thinness, and high resistance to breakdown of dielectric at high electric fields. Capacitors with strip material not impregnated with liquid.

Influence of Water Content on RF and Microwave Dielectric Behavior of Foods

USDA-ARS?s Scientific Manuscript database

Abstract The importance of dielectric properties of food materials are discussed with respect to their influence on the heating of materials by radio-frequency and microwave energy and their use for rapid, nondestructive sensing of quality characteristics of such materials. Data are presented graph...

Influence of Water content of RF and Microwave Dielectric Properties of Foods

USDA-ARS?s Scientific Manuscript database

ABSTRACT The importance of dielectric properties of food materials is discussed with respect to their influence on the heating of materials by radio-frequency and microwave energy and their use for rapid, nondestructive sensing of quality characteristics of such materials. Data are presented graph...

Evaluation of high temperature capacitor dielectrics

NASA Astrophysics Data System (ADS)

Hammoud, Ahmad N.; Myers, Ira T.

Experiments were carried out to evaluate four candidate materials for high temperature capacitor dielectric applications. The materials investigated were polybenzimidazole polymer and three aramid papers: Voltex 450, Nomex 410, and Nomex M 418, an aramid paper containing 50 percent mica. The samples were heat treated for six hours at 60 C and the direct current and 60 Hz alternating current breakdown voltages of both dry and impregnated samples were obtained in a temperature range of 20 to 250 C. The samples were also characterized in terms of their dielectric constant, dielectric loss, and conductivity over this temperature range with an electrical stress of 60 Hz, 50 V/mil present. Additional measurements are underway to determine the volume resistivity, thermal shrinkage, and weight loss of the materials. Preliminary data indicate that the heat treatment of the films slightly improves the dielectric properties with no influence on their breakdown behavior. Impregnation of the samples leads to significant increases in both alternating and direct current breakdown strength. The results are discussed and conclusions made concerning their suitability as high temperature capacitor dielectrics.

Evaluation of high temperature capacitor dielectrics

NASA Technical Reports Server (NTRS)

Hammoud, Ahmad N.; Myers, Ira T.

1992-01-01

Experiments were carried out to evaluate four candidate materials for high temperature capacitor dielectric applications. The materials investigated were polybenzimidazole polymer and three aramid papers: Voltex 450, Nomex 410, and Nomex M 418, an aramid paper containing 50 percent mica. The samples were heat treated for six hours at 60 C and the direct current and 60 Hz alternating current breakdown voltages of both dry and impregnated samples were obtained in a temperature range of 20 to 250 C. The samples were also characterized in terms of their dielectric constant, dielectric loss, and conductivity over this temperature range with an electrical stress of 60 Hz, 50 V/mil present. Additional measurements are underway to determine the volume resistivity, thermal shrinkage, and weight loss of the materials. Preliminary data indicate that the heat treatment of the films slightly improves the dielectric properties with no influence on their breakdown behavior. Impregnation of the samples leads to significant increases in both alternating and direct current breakdown strength. The results are discussed and conclusions made concerning their suitability as high temperature capacitor dielectrics.

Enhanced dielectric properties of Fe-substituted TiO2 nanoparticles

NASA Astrophysics Data System (ADS)

Ali, T.; Ahmed, Ateeq; Naseem siddique, M.; Tripathi, P.

2018-04-01

We report the structural and dielectric properties Ti1-xFexO2 (0.00 < x < 0.10) nanoparticles (NPs) synthesized by sol-gel method. The synthesized material has been characterized by soft X-ray absorption spectroscopy (SXAS) in order to investigate the fine structure and electronic valence state. SXAS analysis reveals that Fe-ions exist only in 3+ valance state in all the samples. The dielectric properties were studied by the use of LCR impedance spectroscopy. The dielectric constants, dielectric loss and A.C. conductivity have been determined as a function of frequency and composition of iron. At higher frequencies, the materials exhibited high AC Conductivity and low dielectric constant. The above theory could be explained by 'Maxwell Wagner Model' and may provide a new insight to fabricate nanomaterials having possible electrical application.

Tube-Super Dielectric Materials: Electrostatic Capacitors with Energy Density Greater than 200 J·cm−3

PubMed Central

Cortes, Francisco Javier Quintero; Phillips, Jonathan

2015-01-01

The construction and performance of a second generation of super dielectric material based electrostatic capacitors (EC), with energy density greater than 200 J·cm−3, which rival the best reported energy density of electric double layer capacitors (EDLC), also known as supercapacitors, are reported. The first generation super dielectric materials (SDM) are multi-material mixtures with dielectric constants greater than 1.0 × 105, composed of a porous, electrically insulating powder filled with a polarizable, ion-containing liquid. Second-generation SDMs (TSDM), introduced here, are anodic titania nanotube arrays filled with concentrated aqueous salt solutions. Capacitors using TiO2 based TSDM were found to have dielectric constants at ~0 Hz greater than 107 in all cases, a maximum operating voltage of greater than 2 volts and remarkable energy density that surpasses the highest previously reported for EC capacitors by approximately one order of magnitude. A simple model based on the classic ponderable media model was shown to be largely consistent with data from nine EC type capacitors employing TSDM. PMID:28793561

Tube-Super Dielectric Materials: Electrostatic Capacitors with Energy Density Greater than 200 J·cm-3.

PubMed

Cortes, Francisco Javier Quintero; Phillips, Jonathan

2015-09-17

The construction and performance of a second generation of super dielectric material based electrostatic capacitors (EC), with energy density greater than 200 J·cm - ³, which rival the best reported energy density of electric double layer capacitors (EDLC), also known as supercapacitors, are reported. The first generation super dielectric materials (SDM) are multi-material mixtures with dielectric constants greater than 1.0 × 10⁵, composed of a porous, electrically insulating powder filled with a polarizable, ion-containing liquid. Second-generation SDMs (TSDM), introduced here, are anodic titania nanotube arrays filled with concentrated aqueous salt solutions. Capacitors using TiO₂ based TSDM were found to have dielectric constants at ~0 Hz greater than 10⁷ in all cases, a maximum operating voltage of greater than 2 volts and remarkable energy density that surpasses the highest previously reported for EC capacitors by approximately one order of magnitude. A simple model based on the classic ponderable media model was shown to be largely consistent with data from nine EC type capacitors employing TSDM.

EDITORIAL: Special cluster on Dielectrics for Emerging Technologies

NASA Astrophysics Data System (ADS)

Clarke, R.; Youngs, I.; Stevens, G.

2004-02-01

The 2003 Conference on Dielectrics for Emerging Technologies was organised by the Institute of Physics Dielectrics Group as one of the participating conferences at the IOP Physics Congress held at Heriot-Watt University between 23 and 27 March 2003. This was the second annual conference of the new Dielectrics Group, which was formed from the former Dielectrics Society in October 2001. The conference policy remains unchanged, with the Group adopting an interdisciplinary and broadband approach to studies of the interaction of electromagnetic fields with materials. This policy is well exemplified by the papers that were delivered at this conference. The aims of the conference were three-fold: to provide a forum for the presentation of leading-edge research on emerging electromagnetic materials, to present developments on the use of dielectrics in emerging technologies and to broaden the debate on metamaterials in the UK, especially in relation to their potential applications. The metamaterials of interest here are macro- or meso-scopically structured materials that offer novel modes of electromagnetic field interaction, thereby widening the range of effective dielectric properties available to us for novel technological applications. They include `negative refractive index materials', `left handed materials', `photonic' or `electromagnetic band-gap materials' and actively-controlled or `smart' electromagnetic materials. Significant metamaterial applications are anticipated in the development of `perfect' lenses, filters, wavefront-conditioning layers and in improved metrology. The conference focussed additionally on dielectrics in support of electronics, photonics and optics, nano-materials, composites and structures, and the development of tuneable dielectrics and resonators for future applications in telecommunications. We are pleased to report that the conference was successful in achieving its objectives, thirty-four oral papers were delivered and twenty-three poster papers presented, many of which provoked significant debate. All contributions and the vigorous discussions held in this predominantly international forum testify to the health and vigour of this branch of materials physics and engineering. We were particularly pleased on this occasion to have the opportunity to run joint conference sessions with the `Structured Optical Materials' and `Electrostatics' conferences, which were run in parallel at the Congress. Electromagnetic materials science is inherently a cross-spectrum discipline and these sessions demonstrated the considerable overlap of technical interests and research from DC to optical frequencies. We are delighted to have the privilege of presenting eleven of the papers from the conference in this special cluster of Journal of Physics D: Applied Physics. Between them they capture the wide range of topics that were covered at the conference. The field of dielectric materials characterisation was well represented and amongst many other topics it included the study of nano-composites, represented here by the papers of Pelster et al and Hussain et al. Composite dielectrics at all scales lie at the centre of most new research into emerging applications and the paper by Bowler and that of Tuncer are also concerned with the understanding and characterisation of such materials. The understanding of the nature and distribution of space charge has always been a core dielectric study and a contribution to this field is made here by the paper of Marat-Mendes et al. Processing is a major factor that governs the properties of all dielectric materials---but this is particularly true in the case of sintered low-loss ceramics. The paper of Pullar et al adds to our knowledge in this important area. The remit of the conference led to the discussion of a very wide range of potential applications. One such is the use of dielectrophoretic forces for separating particles in suspensions (e.g. in pharmaceutical and diagnostic applications). The paper by Flores-Rodriguez and Markz presents a study on one aspect of this discipline. Presentations on meta- and structured materials at the conference are represented here in two papers: those of Shamonina and Solymar and of Zhou, Chan and Sheng, while a study in the closely allied area of band-gap materials is presented in the paper by Schuster and Klein. The final paper from the conference in this special cluster is concerned with an end-use application: the use of tuneable dielectric resonators in base-stations for future mobile telecoms networks. The paper by Krupka et al describes a magnetic approach to such tuning. In the longer term we sincerely hope that both the conference and these papers will prove to have made a significant contribution to the development and uses of dielectrics, and their metamaterial derivatives, in advanced technological applications. It is noteworthy that as a result of the success of this conference, the 2004 annual conference will be on the subject of `Dielectrics at Meso- and Nano-Scales'. We would like to take this opportunity to express our sincere thanks to all who participated in the conference for their contributions and we would like to express our particular thanks to the authors of the papers in this special cluster of Journal of Physics D: Applied Physics.

Correlation Between Material Properties of Ferroelectric Thin Films and Design Parameters for Microwave Device Applications: Modeling Examples and Experimental Verification

NASA Technical Reports Server (NTRS)

Miranda, Felix A.; VanKeuls, Fred W.; Subramanyam, Guru; Mueller, Carl H.; Romanofsky, Robert R.; Rosado, Gerardo

2000-01-01

The application of thin ferroelectric films for frequency and phase agile components is the topic of interest of many research groups worldwide. Consequently, proof-of-concepts (POC) of different tunable microwave components using either (HTS, metal)/ferroelectric thin film/dielectric heterostructures or (thick, thin) film "flip-chip" technology have been reported. Either as ferroelectric thin film characterization tools or from the point of view of circuit implementation approach, both configurations have their respective advantages and limitations. However, we believe that because of the progress made so far using the heterostructure (i.e., multilayer) approach, and due to its intrinsic features such as planar configuration and monolithic integration, a study on the correlation of circuit geometry aspects and ferroelectric material properties could accelerate the insertion of this technology into working systems. In this paper, we will discuss our study performed on circuits based on microstrip lines at frequencies above 10 GHz, where the multilayer configuration offers greater ease of insertion due to circuit's size reduction. Modeled results of relevant circuit parameters such as the characteristic impedance, effective dielectric constant, and attenuation as a function of ferroelectric film's dielectric constant, tans, and thickness, will be presented for SrTiO3 and Ba(x)Sr(1-x)TiO3 ferroelectric films. A comparison between the modeled and experimental data for some of these parameters will be presented.

The zeta potential of extended dielectrics and conductors in terms of streaming potential and streaming current measurements.

PubMed

Gallardo-Moreno, Amparo M; Vadillo-Rodríguez, Virginia; Perera-Núñez, Julia; Bruque, José M; González-Martín, M Luisa

2012-07-21

The electrical characterization of surfaces in terms of the zeta potential (ζ), i.e., the electric potential contributing to the interaction potential energy, is of major importance in a wide variety of industrial, environmental and biomedical applications in which the integration of any material with the surrounding media is initially mediated by the physico-chemical properties of its outer surface layer. Among the different existing electrokinetic techniques for obtaining ζ, streaming potential (V(str)) and streaming current (I(str)) are important when dealing with flat-extended samples. Mostly dielectric materials have been subjected to this type of analysis and only a few papers can be found in the literature regarding the electrokinetic characterization of conducting materials. Nevertheless, a standardized procedure is typically followed to calculate ζ from the measured data and, importantly, it is shown in this paper that such a procedure leads to incorrect zeta potential values when conductors are investigated. In any case, assessment of a reliable numerical value of ζ requires careful consideration of the origin of the input data and the characteristics of the experimental setup. In particular, it is shown that the cell resistance (R) typically obtained through a.c. signals (R(a.c.)), and needed for the calculations of ζ, always underestimates the zeta potential values obtained from streaming potential measurements. The consideration of R(EK), derived from the V(str)/I(str) ratio, leads to reliable values of ζ when dielectrics are investigated. For metals, the contribution of conductivity of the sample to the cell resistance provokes an underestimation of R(EK), which leads to unrealistic values of ζ. For the electrical characterization of conducting samples I(str) measurements constitute a better choice. In general, the findings gathered in this manuscript establish a measurement protocol for obtaining reliable zeta potentials of dielectrics and conductors based on the intrinsic electrokinetic behavior of both types of samples.

A Resonator for Low-Threshold Frequency Conversion

NASA Technical Reports Server (NTRS)

Iltchenko, Vladimir; Matsko, Andrey; Savchenkov, Anatoliy; Maleki, Lute

2004-01-01

A proposed toroidal or disklike dielectric optical resonator (dielectric optical cavity) would be made of an optically nonlinear material and would be optimized for use in parametric frequency conversion by imposition of a spatially periodic permanent electric polarization. The poling (see figure) would suppress dispersions caused by both the material and the geometry of the optical cavity, thereby effecting quasi-matching of the phases of high-resonance-quality (high-Q) whispering-gallery electromagnetic modes. The quasi-phase-matching of the modes would serve to maximize the interactions among them. Such a resonator might be a prototype of a family of compact, efficient nonlinear devices for operation over a broad range of optical wavelengths. A little background information is prerequisite to a meaningful description of this proposal: (1) Described in several prior NASA Tech Briefs articles, the whispering-gallery modes in a component of spheroidal, disklike, or toroidal shape are waveguide modes that propagate circumferentially and are concentrated in a narrow toroidal region centered on the equatorial plane and located near the outermost edge. (2) For the sake of completeness, it must be stated that even though optical resonators of the type considered here are solid dielectric objects and light is confined within them by total internal reflection at dielectric interfaces without need for mirrors, such components are sometimes traditionally called cavities because their effects upon the light propagating within them are similar to those of true cavities bounded by mirrors. (3) For a given set of electromagnetic modes interacting with each other in an optically nonlinear material (e.g., modes associated with the frequencies involved in a frequency-conversion scheme), the threshold power for oscillation depends on the mode volumes and the mode-overlap integral. (4) Whispering-gallery modes are attractive in nonlinear optics because they maximize the effects of nonlinearities by occupying small volumes and affording high Q values

Low-Thermal-Expansion Filled Polytetrafluoroethylene

NASA Technical Reports Server (NTRS)

Shapiro, Sanford S.

1989-01-01

PTFE made thermally compatible with aluminum without changing dielectric constant. Manufactured with fillers and pores to reduce coefficient of thermal expansion by factor of 6 to match aluminum. Material retains 2.1 dielectric constant of pure PTFE. Combines filler and micropore concepts. Particles and voids embedded in PTFE matrix function cooperatively. Particles take up compressive stress imposed by contracting PTFE, and voids take up expanding material. Increases dielectric constant, while voids reduce it.

Pyroelectric Energy Harvesting: Model and Experiments

DTIC Science & Technology

2016-05-01

consisting of a current source for the pyroelectric current, a dielectric capacitor for the adiabatic charging and discharging, and optionally a resistor to...polarization) in a piezoelectric material. To extract work from the pyroelectric effect, the material acts as the dielectric in a capacitor that is...amplifier was chosen for the setup. The pyroelectric element is commonly modeled as a dielectric capacitor and a current source in parallel, as seen in

Determination of the magnetoelectric coupling coefficient from temperature dependences of the dielectric permittivity for multiferroic ceramics Bi{sub 5}Ti{sub 3}FeO{sub 15}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bartkowska, J. A., E-mail: joanna.bartkowska@us.edu.pl; Dercz, J.

2013-11-15

In the multiferroic materials, the dielectric and magnetic properties are closely correlated through the coupling interaction between the ferroelectric and magnetic order. We attempted to determine the magnetoelectric coupling coefficient from the temperature dependences of the dielectric permittivity for multiferroic Bi{sub 5}Ti{sub 3}FeO{sub 15}. Multiferroic ceramics Bi{sub 5}Ti{sub 3}FeO{sub 15} belong to materials of the Aurivillius-type structure. Multiferroic ceramics Bi{sub 5}Ti{sub 3}FeO{sub 15} was synthesized via sintering the Bi{sub 2}O{sub 3} and Fe{sub 2}O{sub 3} mixture and TiO{sub 2} oxides. The precursor material was ground in a high-energy attritorial mill for 5 hours. This material was obtained by a solid-statemore » reaction process at T = 1313 K. We investigated the temperature dependences of the dielectric permittivity for the different frequencies. From the dielectric measurements, we determined the temperature of phase transition of the ferroelectric-to-paraelectric type at about 1013 K. Based on dielectric measurements and theoretical considerations, the values of the magnetoelectric coupling coefficient were specified.« less

Simultaneous Noncontact Precision Imaging of Microstructural and Thickness Variation in Dielectric Materials Using Terahertz Energy

NASA Technical Reports Server (NTRS)

Roth, Don J.; Seebo, Jeffrey P.; Winfree, William P.

2008-01-01

This article describes a noncontact single-sided terahertz electromagnetic measurement and imaging method that simultaneously characterizes microstructural (egs. spatially-lateral density) and thickness variation in dielectric (insulating) materials. The method was demonstrated for two materials-Space Shuttle External Tank sprayed-on foam insulation and a silicon nitride ceramic. It is believed that this method can be used as an inspection method for current and future NASA thermal protection system and other dielectric material inspection applications, where microstructural and thickness variation require precision mapping. Scale-up to more complex shapes such as cylindrical structures and structures with beveled regions would appear to be feasible.

Conducting nanotubes or nanostructures based composites, method of making them and applications

NASA Technical Reports Server (NTRS)

Gupta, Mool C. (Inventor); Yang, Yonglai (Inventor); Dudley, Kenneth L. (Inventor); Lawrence, Roland W. (Inventor)

2013-01-01

An electromagnetic interference (EMI) shielding material includes a matrix of a dielectric or partially conducting polymer, such as foamed polystyrene, with carbon nanotubes or other nanostructures dispersed therein in sufficient concentration to make the material electrically conducting. The composite is formed by dispersing the nanotube material in a solvent in which the dielectric or partially conducting polymer is soluble and mixing the resulting suspension with the dielectric or partially conducting polymer. A foaming agent can be added to produce a lightweight foamed material. An organometallic compound can be added to enhance the conductivity further by decomposition into a metal phase.

Development of Leaky Wave Antennas for Layered Ridge Dielectric Waveguide

NASA Technical Reports Server (NTRS)

Ponchak, George E.; Katehi, Linda P. B.

1993-01-01

The millimeter wave, especially above 100 GHz, and the submillimeter wave frequency spectrum offers the possibility for narrow-beam, high-resolution antennas which are critical for high definition radars required for space debris tracking, airport ground avoidance radars, and missile tracking. In addition, the frequency which most atmospheric constituents may be detected lie in this part of the frequency spectrum. Therefore, the development of electronic components for millimeter/submillimeter wave passive sensors is required for environmental monitoring of the Earth's atmosphere. Typical microwave transmission lines such as microstrip and coplanar waveguide rely on two or more electrical conductors to concentrate and guide the electromagnetic energy. Unfortunately, the surface resistance of the conductors increases as the square root of frequency. In addition, the circuit dimensions must be decreased with increasing frequency to maintain a single mode transmission line which further increases the conductor loss. An alternative family of transmission lines are formed from two or more insulating materials and rely on the differences in the permittivities between the two materials to guide the wave. No metal conductors are required although some dielectric waveguides do utilize a metallic ground plane to facilitate the interconnections of active electrical elements or to reduce the transmission line size. Examples of such transmission lines are image guides, insulated image guides, trapped image guides, ridge guide, and layered ridge dielectric waveguide (LRDW). Although most dielectric waveguides have dimensions on the order of lambda to provide sufficient field confinement, the LRDW has been shown to provide good field confinement for electrically small lines. This offers an advantage in circuit integration. It has been shown that a periodic array of metallic strips placed either along or on top of a dielectric waveguide forms an effective radiator. This antenna is easy to fabricate and there is good background of microstrip type antenna design information in the literature. This paper reports the development of the first frequency scanning antenna fed by a LRDW.

Artificial muscles of dielectric elastomers attached to artificial tendons of functionalized carbon fibers

NASA Astrophysics Data System (ADS)

Ye, Zhihang; Faisal, Md. Shahnewaz Sabit; Asmatulu, Ramazan; Chen, Zheng

2014-03-01

Dielectric elastomers are soft actuation materials with promising applications in robotics and biomedical de- vices. In this paper, a bio-inspired artificial muscle actuator with artificial tendons is developed for robotic arm applications. The actuator uses dielectric elastomer as artificial muscle and functionalized carbon fibers as artificial tendons. A VHB 4910 tape is used as the dielectric elastomer and PDMS is used as the bonding material to mechanically connect the carbon fibers to the elastomer. Carbon fibers are highly popular for their high electrical conductivities, mechanical strengths, and bio-compatibilities. After the acid treatments for the functionalization of carbon fibers (500 nm - 10 μm), one end of carbon fibers is spread into the PDMS material, which provides enough bonding strength with other dielectric elastomers, while the other end is connected to a DC power supply. To characterize the actuation capability of the dielectric elastomer and electrical conductivity of carbon fibers, a diaphragm actuator is fabricated, where the carbon fibers are connected to the actuator. To test the mechanical bonding between PDMS and carbon fibers, specimens of PDMS bonded with carbon fibers are fabricated. Experiments have been conducted to verify the actuation capability of the dielectric elastomer and mechanical bonding of PDMS with carbon fibers. The energy efficiency of the dielectric elastomer increases as the load increases, which can reach above 50%. The mechanical bonding is strong enough for robotic arm applications.

Compound surface-plasmon-polariton waves guided by a thin metal layer sandwiched between a homogeneous isotropic dielectric material and a structurally chiral material

NASA Astrophysics Data System (ADS)

Chiadini, Francesco; Fiumara, Vincenzo; Scaglione, Antonio; Lakhtakia, Akhlesh

2016-03-01

Multiple compound surface plasmon-polariton (SPP) waves can be guided by a structure consisting of a sufficiently thick layer of metal sandwiched between a homogeneous isotropic dielectric (HID) material and a dielectric structurally chiral material (SCM). The compound SPP waves are strongly bound to both metal/dielectric interfaces when the thickness of the metal layer is comparable to the skin depth but just to one of the two interfaces when the thickness is much larger. The compound SPP waves differ in phase speed, attenuation rate, and field profile, even though all are excitable at the same frequency. Some compound SPP waves are not greatly affected by the choice of the direction of propagation in the transverse plane but others are, depending on metal thickness. For fixed metal thickness, the number of compound SPP waves depends on the relative permittivity of the HID material, which can be useful for sensing applications.

Effective conductivity of wire mesh reflectors for space deployable antenna systems

NASA Technical Reports Server (NTRS)

Davis, William A.

1994-01-01

This report summarizes efforts to characterize the measurement of conductive mesh and smooth surfaces using proximity measurements for a dielectric resonator. The resonator operates in the HEM11 mode and is shown to have an evanescent field behavior in the vicinity of the sample surface, raising some question to the validity of measurements requiring near normal incidence on the material. In addition, the slow radial field decay outside of the dielectric resonator validates the sensitivity to the planar supporting structure and potential radiation effects. Though these concerns become apparent along with the sensitivity to the gap between the dielectric and the material surface, the basic concept of the material measurement using dielectric resonators has been verified for useful comparison of material surface properties. The properties, particularly loss, may be obtained by monitoring the resonant frequency along with the resonator quality factor (Q), 3 dB bandwidth, or the midband transmission amplitude. Comparison must be made to known materials to extract the desired data.

All-dielectric rod antenna array for terahertz communications

NASA Astrophysics Data System (ADS)

Withayachumnankul, Withawat; Yamada, Ryoumei; Fujita, Masayuki; Nagatsuma, Tadao

2018-05-01

The terahertz band holds a potential for point-to-point short-range wireless communications at sub-terabit speed. To realize this potential, supporting antennas must have a wide bandwidth to sustain high data rate and must have high gain and low dissipation to compensate for the free space path loss that scales quadratically with frequency. Here we propose an all-dielectric rod antenna array with high radiation efficiency, high gain, and wide bandwidth. The proposed array is integral to a low-loss photonic crystal waveguide platform, and intrinsic silicon is the only constituent material for both the antenna and the feed to maintain the simplicity, compactness, and efficiency. Effective medium theory plays a key role in the antenna performance and integrability. An experimental validation with continuous-wave terahertz electronic systems confirms the minimum gain of 20 dBi across 315-390 GHz. A demonstration shows that a pair of such identical rod array antennas can handle bit-error-free transmission at the speed up to 10 Gbit/s. Further development of this antenna will build critical components for future terahertz communication systems.

Mm-size bistable zipping dielectric elastomer actuators for integrated microfluidics

NASA Astrophysics Data System (ADS)

Maffli, Luc; Rosset, Samuel; Shea, Herbert R.

2013-04-01

We report on a new structure of Dielectric Elastomer Actuators (DEAs) called zipping DEAs, which have a set of unique characteristics that are a good match for the requirements of electrically-powered integrated microfluidic pumping and/or valving units as well as Braille displays. The zipping DEAs operate by pulling electrostatically an elastomer membrane in contact with the rigid sidewalls of a sloped chamber. In this work, we report on fully functional mm-size zipping DEAs that demonstrate a complete sealing of the chamber sidewalls and a tunable bistable behavior, and compare the measurements with an analytical model. Compared to our first generation of devices, we are able vary the sidewall angle and benefit therefore from more flexibility to study the requirements to make fully functional actuators. In particular, we show that with Nusil CF19 as membrane material (1.2 MPa Young's modulus), it is possible to zip completely 2.3 mm diameter chambers with 15° and 21° sidewalls angle equibiaxially prestretched to λ0=1.12 and 15° chambers with λ0=1.27.

All-dielectric metamaterials

NASA Astrophysics Data System (ADS)

Jahani, Saman; Jacob, Zubin

2016-01-01

The ideal material for nanophotonic applications will have a large refractive index at optical frequencies, respond to both the electric and magnetic fields of light, support large optical chirality and anisotropy, confine and guide light at the nanoscale, and be able to modify the phase and amplitude of incoming radiation in a fraction of a wavelength. Artificial electromagnetic media, or metamaterials, based on metallic or polar dielectric nanostructures can provide many of these properties by coupling light to free electrons (plasmons) or phonons (phonon polaritons), respectively, but at the inevitable cost of significant energy dissipation and reduced device efficiency. Recently, however, there has been a shift in the approach to nanophotonics. Low-loss electromagnetic responses covering all four quadrants of possible permittivities and permeabilities have been achieved using completely transparent and high-refractive-index dielectric building blocks. Moreover, an emerging class of all-dielectric metamaterials consisting of anisotropic crystals has been shown to support large refractive index contrast between orthogonal polarizations of light. These advances have revived the exciting prospect of integrating exotic electromagnetic effects in practical photonic devices, to achieve, for example, ultrathin and efficient optical elements, and realize the long-standing goal of subdiffraction confinement and guiding of light without metals. In this Review, we present a broad outline of the whole range of electromagnetic effects observed using all-dielectric metamaterials: high-refractive-index nanoresonators, metasurfaces, zero-index metamaterials and anisotropic metamaterials. Finally, we discuss current challenges and future goals for the field at the intersection with quantum, thermal and silicon photonics, as well as biomimetic metasurfaces.

Hydrothermal synthesis of doped lanthanum zirconate nanomaterials and the effect of V–Ge substitution on their structural, electrical and dielectric properties

DOE Office of Scientific and Technical Information (OSTI.GOV)

Farid, Muhammad Asim; Asghar, Muhammad Adnan; Ashiq, Muhammad Naeem, E-mail: naeemashiqqau@yahoo.com

2014-11-15

Graphical abstract: Variation of dielectric constant with frequency for all the synthesized materials. - Highlights: • Hydrothermal method has been successfully employed to synthesize the zirconates. • XRD confirmed the formation of required phase. • Increased electrical resistivity makes these materials useful for microwave devices. • Dielectric parameters of zirconates decrease with increasing frequency. • Dielectric constant decreases with increasing substituents concentration. - Abstract: A hydrothermal method was successfully employed for the synthesis of a series of vanadium and germanium co-doped pyrochlore lanthanum zirconates with composition La{sub 2−x}V{sub x}Zr{sub 2−y}Ge{sub y}O{sub 7} (where x, y = 0.0, 0.25, 0.50, 0.75more » and 1.0). The XRD and FTIR analyses confirmed the formation of single phase except vanadium and germanium substituted samples and the crystallite sizes are in the range of 7–31 nm for V{sup 3+}–Ge{sup 4+} substituted samples. The theoretical compositions are confirmed by the ED-XRF studies. The room temperature electrical resistivity increase with the substituents concentration which suggests that the synthesized materials can be used for microwave devices as such devices required highly resistive materials. Dielectric properties were measured in the frequency range of 6 kHz to 1 MHz. The dielectric parameters decrease with increase in frequency. The DC resistivity data is in good agreement with the dielectric data.« less

Microwave dielectric behavior of vegetation material

NASA Technical Reports Server (NTRS)

Elrayes, Mohamed A.; Ulaby, Fawwaz T.

1987-01-01

The microwave dielectric behavior of vegetation was examined through the development of theoretical models involving dielectric dispersion by both bound and free water and supported by extensive dielectric measurements conducted over a wide range of conditions. The experimental data were acquired using an open-ended coaxial probe that was developed for sensing the dielectric constant of thin layers of materials, such as leaves, from measurements of the complex reflection coefficient using a network analyzer. The probe system was successfully used to record the spectral variation of the dielectric constant over a wide frequency range extending from 0.5 to 20.4 GHz at numerous temperatures between -40 to +40 C. The vegetation samples were measured over a wide range of moisture conditions. To model the dielectric spectrum of the bound water component of the water included in vegetation, dielectric measurements were made for several sucrose-water solutions as analogs for the situation in vegetation. The results were used in conjunction with the experimental data for leaves to determine some of the constant coefficients in the theoretical models. Two models, both of which provide good fit to the data, are proposed.

Dielectric Heaters for Testing Spacecraft Nuclear Reactors

NASA Technical Reports Server (NTRS)

Sims, William Herbert; Bitteker, Leo; Godfroy, Thomas

2006-01-01

A document proposes the development of radio-frequency-(RF)-driven dielectric heaters for non-nuclear thermal testing of the cores of nuclear-fission reactors for spacecraft. Like the electrical-resistance heaters used heretofore for such testing, the dielectric heaters would be inserted in the reactors in place of nuclear fuel rods. A typical heater according to the proposal would consist of a rod of lossy dielectric material sized and shaped like a fuel rod and containing an electrically conductive rod along its center line. Exploiting the dielectric loss mechanism that is usually considered a nuisance in other applications, an RF signal, typically at a frequency .50 MHz and an amplitude between 2 and 5 kV, would be applied to the central conductor to heat the dielectric material. The main advantage of the proposal is that the wiring needed for the RF dielectric heating would be simpler and easier to fabricate than is the wiring needed for resistance heating. In some applications, it might be possible to eliminate all heater wiring and, instead, beam the RF heating power into the dielectric rods from external antennas.

Investigation of Fumed Silica/Aqueous NaCl Superdielectric Material.

PubMed

Jenkins, Natalie; Petty, Clayton; Phillips, Jonathan

2016-02-20

A constant current charge/discharge protocol which showed fumed silica filled to the point of incipient wetness with aqueous NaCl solution to have dielectric constants >10⁸ over the full range of dielectric thicknesses of 0.38-3.9 mm and discharge times of 0.25->100 s was studied, making this material another example of a superdielectric. The dielectric constant was impacted by both frequency and thickness. For time to discharge greater than 10 s the dielectric constant for all thicknesses needed to be fairly constant, always >10⁸, although trending higher with increasing thickness. At shorter discharge times the dielectric constant consistently decreased, with decreasing time to discharge. Hence, it is reasonable to suggest that for time to discharge >10 s the dielectric constant at all thicknesses will be greater than 10⁸. This in turn implies an energy density for a 5 micron thick dielectric layer in the order of 350 J/cm³ for discharge times greater than 10 s.

Investigation of Fumed Silica/Aqueous NaCl Superdielectric Material

PubMed Central

Jenkins, Natalie; Petty, Clayton; Phillips, Jonathan

2016-01-01

A constant current charge/discharge protocol which showed fumed silica filled to the point of incipient wetness with aqueous NaCl solution to have dielectric constants >108 over the full range of dielectric thicknesses of 0.38–3.9 mm and discharge times of 0.25–>100 s was studied, making this material another example of a superdielectric. The dielectric constant was impacted by both frequency and thickness. For time to discharge greater than 10 s the dielectric constant for all thicknesses needed to be fairly constant, always >109, although trending higher with increasing thickness. At shorter discharge times the dielectric constant consistently decreased, with decreasing time to discharge. Hence, it is reasonable to suggest that for time to discharge >10 s the dielectric constant at all thicknesses will be greater than 109. This in turn implies an energy density for a 5 micron thick dielectric layer in the order of 350 J/cm3 for discharge times greater than 10 s. PMID:28787918

The preparation method of terahertz monolithic integrated device

NASA Astrophysics Data System (ADS)

Zhang, Cong; Su, Bo; He, Jingsuo; Zhang, Hongfei; Wu, Yaxiong; Zhang, Shengbo; Zhang, Cunlin

2018-01-01

The terahertz monolithic integrated device is to integrate the pumping area of the terahertz generation, the detection area of the terahertz receiving and the metal waveguide of terahertz transmission on the same substrate. The terahertz generation and detection device use a photoconductive antenna structure the metal waveguide use a microstrip line structure. The evanescent terahertz-bandwidth electric field extending above the terahertz transmission line interacts with, and is modified by, overlaid dielectric samples, thus enabling the characteristic vibrational absorption resonances in the sample to be probed. In this device structure, since the semiconductor substrate of the photoconductive antenna is located between the strip conductor and the dielectric layer of the microstrip line, and the semiconductor substrate cannot grow on the dielectric layer directly. So how to prepare the semiconductor substrate of the photoconductive antenna and how to bond the semiconductor substrate to the dielectric layer of the microstrip line is a key step in the terahertz monolithic integrated device. In order to solve this critical problem, the epitaxial wafer structure of the two semiconductor substrates is given and transferred to the desired substrate by two methods, respectively.

Improved Photon-Emission-Microscope System

NASA Technical Reports Server (NTRS)

Vu, Duc

2006-01-01

An improved photon-emission-microscope (PEM) instrumentation system has been developed for use in diagnosing failure conditions in semiconductor devices, including complex integrated circuits. This system is designed primarily to image areas that emit photons, at wavelengths from 400 to 1,100 nm, associated with device failures caused by leakage of electric current through SiO2 and other dielectric materials used in multilayer semiconductor structures. In addition, the system is sensitive enough to image areas that emit photons during normal operation.

All-dielectric metamaterial frequency selective surface

NASA Astrophysics Data System (ADS)

Wang, Jun; Qu, Shaobo; Li, Liyang; Wang, Jiafu; Feng, Mingde; Ma, Hua; Du, Hongliang; Xu, Zhuo

Frequency selective surface (FSS) has been extensively studied due to its potential applications in radomes, antenna reflectors, high-impedance surfaces and absorbers. Recently, a new principle of designing FSS has been proposed and mainly studied in two levels. In the level of materials, dielectric materials instead of metallic patterns are capable of achieving more functional performance in FSS design. Moreover, FSSs made of dielectric materials can be used in different extreme environments, depending on their electrical, thermal or mechanical properties. In the level of design principle, the theory of metamaterial can be used to design FSS in a convenient and concise way. In this review paper, we provide a brief summary about the recent progress in all-dielectric metamaterial frequency selective surface (ADM-FSS). The basic principle of designing ADM-FSS is summarized. As significant tools, Mie theory and dielectric resonator (DR) theory are given which illustrate clearly how they are used in the FSS design. Then, several design cases including dielectric particle-based ADM-FSS and dielectric network-based ADM-FSS are introduced and reviewed. After a discussion of these two types of ADM-FSSs, we reviewed the existing fabrication techniques that are used in building the experiment samples. Finally, issues and challenges regarding the rapid fabrication techniques and further development aspects are discussed.

Synthesis and electromechanical characterization of a new acrylic dielectric elastomer with high actuation strain and dielectric strength

NASA Astrophysics Data System (ADS)

Hu, Wei; Niu, Xiaofan; Yang, Xinguo; Zhang, Naifang; Pei, Qibing

2013-04-01

Dielectric Elastomers (DEs) can be actuated under high electric field to produce large strains. Most high-performing DE materials such as the 3M™ VHB™ membranes are commercial products designed for industrial pressure-sensitive adhesives. The limited knowledge of the exact chemical structures of these commercial materials has made it difficult to understand the relationship between molecular structures and electromechanical properties. In this work, new acrylic elastomers based on n-butyl acrylate and acrylic acid were synthesized from monomer solutions by UV-initiated bulk polymerization. The new acrylic copolymers have a potential to obtain high dielectric constant, actuation strain, dielectric strength, and a high energy density. Silicone and ester oligomer diacrylates were also added onto the copolymer structures to suppress crystallization and to crosslink the polymer chains. Four acrylic formulations were developed with different amounts of acrylic acid. This gives a tunable stiffness, while the dielectric constant is varied from 4.3 to 7.1. The figure-of-merit performance of the best formulation is 186 % area strain, 222 MV/m of dielectric strength, and 2.7 MJ/m3 of energy density. To overcome electromechanical instability, different prestrain ratios were investigated, and under the optimized prestrain, the material has a lifetime of thousands of cycles at 120 % area strain.

Simultaneous observation of up/down conversion photoluminescence and colossal permittivity properties in (Er+Nb) co-doped TiO2 materials

NASA Astrophysics Data System (ADS)

Tse, Mei-Yan; Tsang, Ming-Kiu; Wong, Yuen-Ting; Chan, Yi-Lok; Hao, Jianhua

2016-07-01

We have investigated the optical and dielectric properties of rutile TiO2 doped with Nb and Er, i.e., (Er0.5Nb0.5)xTi1-xO2. The up/downconversion photoluminescence was observed in the visible and near-infrared region from the materials under 980 nm laser diode excitation. The upconversion emissions are attributed to the energy transfer between Er ions in the excited states. Moreover, the dielectric measurements indicate that the fabricated materials simultaneously present colossal permittivity properties with relatively low dielectric loss. Our work demonstrates the coexistence of both interesting luminescence and attractive dielectric characteristics in (Er+Nb) co-doped TiO2, showing the potential for multifunctional applications.

Metallic dielectric photonic crystals and methods of fabrication

DOEpatents

Chou, Jeffrey Brian; Kim, Sang-Gook

2017-12-05

A metallic-dielectric photonic crystal is formed with a periodic structure defining a plurality of resonant cavities to selectively absorb incident radiation. A metal layer is deposited on the inner surfaces of the resonant cavities and a dielectric material fills inside the resonant cavities. This photonic crystal can be used to selectively absorb broadband solar radiation and then reemit absorbed radiation in a wavelength band that matches the absorption band of a photovoltaic cell. The photonic crystal can be fabricated by patterning a sacrificial layer with a plurality of holes, into which is deposited a supporting material. Removing the rest of the sacrificial layer creates a supporting structure, on which a layer of metal is deposited to define resonant cavities. A dielectric material then fills the cavities to form the photonic crystal.

Metallic dielectric photonic crystals and methods of fabrication

DOEpatents

Chou, Jeffrey Brian; Kim, Sang-Gook

2016-12-20

A metallic-dielectric photonic crystal is formed with a periodic structure defining a plurality of resonant cavities to selectively absorb incident radiation. A metal layer is deposited on the inner surfaces of the resonant cavities and a dielectric material fills inside the resonant cavities. This photonic crystal can be used to selectively absorb broadband solar radiation and then reemit absorbed radiation in a wavelength band that matches the absorption band of a photovoltaic cell. The photonic crystal can be fabricated by patterning a sacrificial layer with a plurality of holes, into which is deposited a supporting material. Removing the rest of the sacrificial layer creates a supporting structure, on which a layer of metal is deposited to define resonant cavities. A dielectric material then fills the cavities to form the photonic crystal.

Super Dielectric Materials

PubMed Central

Fromille, Samuel; Phillips, Jonathan

2014-01-01

Evidence is provided here that a class of materials with dielectric constants greater than 105 at low frequency (<10−2 Hz), herein called super dielectric materials (SDM), can be generated readily from common, inexpensive materials. Specifically it is demonstrated that high surface area alumina powders, loaded to the incipient wetness point with a solution of boric acid dissolved in water, have dielectric constants, near 0 Hz, greater than 4 × 108 in all cases, a remarkable increase over the best dielectric constants previously measured for energy storage capabilities, ca. 1 × 104. It is postulated that any porous, electrically insulating material (e.g., high surface area powders of silica, titania, etc.), filled with a liquid containing a high concentration of ionic species will potentially be an SDM. Capacitors created with the first generated SDM dielectrics (alumina with boric acid solution), herein called New Paradigm Super (NPS) capacitors display typical electrostatic capacitive behavior, such as increasing capacitance with decreasing thickness, and can be cycled, but are limited to a maximum effective operating voltage of about 0.8 V. A simple theory is presented: Water containing relatively high concentrations of dissolved ions saturates all, or virtually all, the pores (average diameter 500 Å) of the alumina. In an applied field the positive ionic species migrate to the cathode end, and the negative ions to the anode end of each drop. This creates giant dipoles with high charge, hence leading to high dielectric constant behavior. At about 0.8 V, water begins to break down, creating enough ionic species to “short” the individual water droplets. Potentially NPS capacitor stacks can surpass “supercapacitors” in volumetric energy density. PMID:28788298

Super Dielectric Materials.

PubMed

Fromille, Samuel; Phillips, Jonathan

2014-12-22

Evidence is provided here that a class of materials with dielectric constants greater than 10⁵ at low frequency (<10 -2 Hz), herein called super dielectric materials (SDM), can be generated readily from common, inexpensive materials. Specifically it is demonstrated that high surface area alumina powders, loaded to the incipient wetness point with a solution of boric acid dissolved in water, have dielectric constants, near 0 Hz, greater than 4 × 10⁸ in all cases, a remarkable increase over the best dielectric constants previously measured for energy storage capabilities, ca. 1 × 10⁴. It is postulated that any porous, electrically insulating material (e.g., high surface area powders of silica, titania, etc. ), filled with a liquid containing a high concentration of ionic species will potentially be an SDM. Capacitors created with the first generated SDM dielectrics (alumina with boric acid solution), herein called New Paradigm Super (NPS) capacitors display typical electrostatic capacitive behavior, such as increasing capacitance with decreasing thickness, and can be cycled, but are limited to a maximum effective operating voltage of about 0.8 V. A simple theory is presented: Water containing relatively high concentrations of dissolved ions saturates all, or virtually all, the pores (average diameter 500 Å) of the alumina. In an applied field the positive ionic species migrate to the cathode end, and the negative ions to the anode end of each drop. This creates giant dipoles with high charge, hence leading to high dielectric constant behavior. At about 0.8 V, water begins to break down, creating enough ionic species to "short" the individual water droplets. Potentially NPS capacitor stacks can surpass "supercapacitors" in volumetric energy density.

Laboratory simulation of irradiation-induced dielectric breakdown in spacecraft charging

NASA Technical Reports Server (NTRS)

Yadlowsky, E. J.; Churchill, R. J.; Hazelton, R. C.

1980-01-01

The discharging of dielectric samples irradiated by a beam of monoenergetic electrons is investigated. The development of a model, or models, which describe the discharge phenomena occuring on the irradiated dielectric targets is discussed. The electrical discharge characteristics of irradiated dielectric samples are discussed and the electrical discharge paths along dielectric surfaces and within the dielectric material are determined. The origin and destination of the surface emitted particles is examined and the charge and energy balance in the system is evaluated.

Elastomer modulus and dielectric strength scaling with sample thickness

NASA Astrophysics Data System (ADS)

Larson, Kent

2015-04-01

Material characteristics such as adhesion and dielectric strength have well recognized dependencies on material thickness. There is disagreement, however, on the scale: the long held dictum that dielectric strength is inversely proportional to the square root of sample thickness has been shown to not always hold true for all materials, nor for all possible thickness regions. In D-EAP applications some studies have postulated a "critical thickness" below which properties show significantly less thickness dependency. While a great deal of data is available for dielectric strength, other properties are not nearly as well documented as samples get thinner. In particular, elastic modulus has been found to increase and elongation to decrease as sample thickness is lowered. This trend can be observed experimentally, but has been rarely reported and certainly does not appear in typical suppliers' product data sheets. Both published and newly generated data were used to study properties such as elastic modulus and dielectric strength vs sample thickness in silicone elastomers. Several theories are examined to explain such behavior, such as the impact of defect size and of common (but not well reported) concentration gradients that occur during elastomer curing that create micron-sized layers at the upper and lower interfaces with divergent properties to the bulk material. As Dielectric Electro-Active Polymer applications strive to lower and lower material thickness, changing mechanical properties must be recognized and taken into consideration for accurate electro-mechanical predictions of performance.

IIIV/Si Nanoscale Lasers and Their Integration with Silicon Photonics

NASA Astrophysics Data System (ADS)

Bondarenko, Olesya

The rapidly evolving global information infrastructure requires ever faster data transfer within computer networks and stations. Integrated chip scale photonics can pave the way to accelerated signal manipulation and boost bandwidth capacity of optical interconnects in a compact and ergonomic arrangement. A key building block for integrated photonic circuits is an on-chip laser. In this dissertation we explore ways to reduce the physical footprint of semiconductor lasers and make them suitable for high density integration on silicon, a standard material platform for today's integrated circuits. We demonstrated the first room temperature metalo-dielectric nanolaser, sub-wavelength in all three dimensions. Next, we demonstrated a nanolaser on silicon, showing the feasibility of its integration with this platform. We also designed and realized an ultracompact feedback laser with edge-emitting structure, amenable for in-plane coupling with a standard silicon waveguide. Finally, we discuss the challenges and propose solutions for improvement of the device performance and practicality.

Fluoro-polymer functionalized graphene for flexible ferroelectric polymer-based high-k nanocomposites with suppressed dielectric loss and low percolation threshold.

PubMed

Yang, Ke; Huang, Xingyi; Fang, Lijun; He, Jinliang; Jiang, Pingkai

2014-12-21

Flexible nanodielectric materials with high dielectric constant and low dielectric loss have huge potential applications in the modern electronic and electric industry. Graphene sheets (GS) and reduced-graphene oxide (RGO) are promising fillers for preparing flexible polymer-based nanodielectric materials because of their unique two-dimensional structure and excellent electrical and mechanical properties. However, the easy aggregation of GS/RGO significantly limits the potential of graphene in enhancing the dielectric constant of polymer composites. In addition, the poor filler/matrix nanoscale interfacial adhesion also causes difficulties in suppressing the dielectric loss of the composites. In this work, using a facile and environmentally friendly approach, polydopamine coated RGO (PDA-RGO) and fluoro-polymer functionalized RGO (PF-PDA-RGO) were prepared. Compared with the RGO prepared by the conventional methods [i.e. hydrazine reduced-graphene oxide (H-RGO)] and PDA-RGO, the resulting PF-PDA-RGO nanosheets exhibit excellent dispersion in the ferroelectric polymer matrix [i.e. poly(vinylidene fluoride-co-hexafluoro propylene), P(VDF-HFP)] and strong interfacial adhesion with the matrix, leading to a low percolation threshold (fc = 1.06 vol%) and excellent flexibility for the corresponding nanocomposites. Among the three nanocomposites, the P(VDF-HFP)/PF-PDA-RGO nanocomposites exhibited the optimum performance (i.e. simultaneously having high dielectric constant and low dielectric loss). For instance, at 1000 Hz, the P(VDF-HFP) nanocomposite sample with 1.0 vol% PF-PDA-RGO has a dielectric constant of 107.9 and a dielectric loss of 0.070, showing good potential for dielectric applications. Our strategy provides a new pathway to prepare high performance flexible nanodielectric materials.

Intrinsic Enhancement of Dielectric Permittivity in (Nb + In) co-doped TiO2 single crystals.

PubMed

Kawarasaki, Masaru; Tanabe, Kenji; Terasaki, Ichiro; Fujii, Yasuhiro; Taniguchi, Hiroki

2017-07-13

The development of dielectric materials with colossal permittivity is important for the miniaturization of electronic devices and fabrication of high-density energy-storage devices. The electron-pinned defect-dipoles has been recently proposed to boost the permittivity of (Nb + In) co-doped TiO 2 to 10 5 . However, the follow-up studies suggest an extrinsic contribution to the colossal permittivity from thermally excited carriers. Herein, we demonstrate a marked enhancement in the permittivity of (Nb + In) co-doped TiO 2 single crystals at sufficiently low temperatures such that the thermally excited carriers are frozen out and exert no influence on the dielectric response. The results indicate that the permittivity attains quadruple of that for pure TiO 2 . This finding suggests that the electron-pinned defect-dipoles add an extra dielectric response to that of the TiO 2 host matrix. The results offer a novel approach for the development of functional dielectric materials with large permittivity by engineering complex defects into bulk materials.

Absolute Thickness Measurements on Coatings Without Prior Knowledge of Material Properties Using Terahertz Energy

NASA Technical Reports Server (NTRS)

Roth, Don J.; Cosgriff, Laura M.; Harder, Bryan; Zhu, Dongming; Martin, Richard E.

2013-01-01

This study investigates the applicability of a novel noncontact single-sided terahertz electromagnetic measurement method for measuring thickness in dielectric coating systems having either dielectric or conductive substrate materials. The method does not require knowledge of the velocity of terahertz waves in the coating material. The dielectric coatings ranged from approximately 300 to 1400 m in thickness. First, the terahertz method was validated on a bulk dielectric sample to determine its ability to precisely measure thickness and density variation. Then, the method was studied on simulated coating systems. One simulated coating consisted of layered thin paper samples of varying thicknesses on a ceramic substrate. Another simulated coating system consisted of adhesive-backed Teflon adhered to conducting and dielectric substrates. Alumina samples that were coated with a ceramic adhesive layer were also investigated. Finally, the method was studied for thickness measurement of actual thermal barrier coatings (TBC) on ceramic substrates. The unique aspects and limitations of this method for thickness measurements are discussed.

Contact method to allow benign failure in ceramic capacitor having self-clearing feature

DOEpatents

Myers, John D; Taylor, Ralph S

2012-06-26

A capacitor exhibiting a benign failure mode has a first electrode layer, a first ceramic dielectric layer deposited on a surface of the first electrode, and a second electrode layer disposed on the ceramic dielectric layer, wherein selected areas of the ceramic dielectric layer have additional dielectric material of sufficient thickness to exhibit a higher dielectric breakdown voltage than the remaining majority of the dielectric layer. The added thickness of the dielectric layer in selected areas allows lead connections to be made at the selected areas of greater dielectric thickness while substantially eliminating a risk of dielectric breakdown and failure at the lead connections, whereby the benign failure mode is preserved.

Nuclear and Physical Properties of Dielectrics under Neutron Irradiation in Fast (BN-600) and Fusion (DEMO-S) Reactors

NASA Astrophysics Data System (ADS)

Blokhin, D. A.; Chernov, V. M.; Blokhin, A. I.

2017-12-01

Nuclear and physical properties (activation and transmutation of elements) of BN and Al2O3 dielectric materials subjected to neutron irradiation for up to 5 years in Russian fast (BN-600) and fusion (DEMO-S) reactors were calculated using the ACDAM-2.0 software complex for different post-irradiation cooling times (up to 10 years). Analytical relations were derived for the calculated quantities. The results may be used in the analysis of properties of irradiated dielectric materials and may help establish the rules for safe handling of these materials.

CMUTs with high-K atomic layer deposition dielectric material insulation layer.

PubMed

Xu, Toby; Tekes, Coskun; Degertekin, F

2014-12-01

Use of high-κ dielectric, atomic layer deposition (ALD) materials as an insulation layer material for capacitive micromachined ultrasonic transducers (CMUTs) is investigated. The effect of insulation layer material and thickness on CMUT performance is evaluated using a simple parallel plate model. The model shows that both high dielectric constant and the electrical breakdown strength are important for the dielectric material, and significant performance improvement can be achieved, especially as the vacuum gap thickness is reduced. In particular, ALD hafnium oxide (HfO2) is evaluated and used as an improvement over plasma-enhanced chemical vapor deposition (PECVD) silicon nitride (Six)Ny)) for CMUTs fabricated by a low-temperature, complementary metal oxide semiconductor transistor-compatible, sacrificial release method. Relevant properties of ALD HfO2) such as dielectric constant and breakdown strength are characterized to further guide CMUT design. Experiments are performed on parallel fabricated test CMUTs with 50-nm gap and 16.5-MHz center frequency to measure and compare pressure output and receive sensitivity for 200-nm PECVD Six)Ny) and 100-nm HfO2) insulation layers. Results for this particular design show a 6-dB improvement in receiver output with the collapse voltage reduced by one-half; while in transmit mode, half the input voltage is needed to achieve the same maximum output pressure.

Link between the dielectric properties of mesomorphic and biological materials

NASA Astrophysics Data System (ADS)

Szwajczak, Elzbieta; Szymanski, Aleksander B.

2002-06-01

An application of liquid crystalline materials as a model materials for the use in dielectric spectroscopy of the artificial biological materials and the tissues is discussed. It is shown that an application of the standard electrochemical concepts may break in the case of liquid crystalline materials as well as biological materials. The presence of space charge regions as well as electrical non- linearities of the sample may suggest some special possibility of the time domain technique application.

Flexoelectric effect in functionally graded materials: A numerical study

NASA Astrophysics Data System (ADS)

Kumar, Anuruddh; Kiran, Raj; Kumar, Rajeev; Chandra Jain, Satish; Vaish, Rahul

2018-04-01

The flexoelectric effect has been observed in a wide range of dielectric materials. However, the flexoelectric effect can only be induced using the strain gradient. Researchers have examined the flexoelectricity using non-uniform loading (cantilever type) or non-uniform shape in dielectric materials, which may be undesirable in many applications. In the present article, we demonstrate induced flexoelectricity in dielectric functionally graded materials (FGMs) due to non-uniform Youngs's modulus along the thickness. To examine flexoelectricity, Ba0.6Sr0.4TiO3 (BST) and polyvinylidene fluoride (PVDF) were used to numerically simulate the performance of FGMs. 2D simulation suggests that output voltage can drastically enhance for optimum grading index of FGMs.

Vapor etching of nuclear tracks in dielectric materials

DOEpatents

Musket, Ronald G.; Porter, John D.; Yoshiyama, James M.; Contolini, Robert J.

2000-01-01

A process involving vapor etching of nuclear tracks in dielectric materials for creating high aspect ratio (i.e., length much greater than diameter), isolated cylindrical holes in dielectric materials that have been exposed to high-energy atomic particles. The process includes cleaning the surface of the tracked material and exposing the cleaned surface to a vapor of a suitable etchant. Independent control of the temperatures of the vapor and the tracked materials provide the means to vary separately the etch rates for the latent track region and the non-tracked material. As a rule, the tracked regions etch at a greater rate than the non-tracked regions. In addition, the vapor-etched holes can be enlarged and smoothed by subsequent dipping in a liquid etchant. The 20-1000 nm diameter holes resulting from the vapor etching process can be useful as molds for electroplating nanometer-sized filaments, etching gate cavities for deposition of nano-cones, developing high-aspect ratio holes in trackable resists, and as filters for a variety of molecular-sized particles in virtually any liquid or gas by selecting the dielectric material that is compatible with the liquid or gas of interest.

Cellulose Triacetate Dielectric Films For Capacitors

NASA Technical Reports Server (NTRS)

Yen, Shiao-Ping S.; Jow, T. Richard

1994-01-01

Cellulose triacetate investigated for use as dielectric material in high-energy-density capacitors for pulsed-electrical-power systems. Films of cellulose triacetate metalized on one or both sides for use as substrates for electrodes and/or as dielectrics between electrodes in capacitors. Used without metalization as simple dielectric films. Advantages include high breakdown strength and self-healing capability.

Single-layer graphene-assembled 3D porous carbon composites with PVA and Fe₃O₄ nano-fillers: an interface-mediated superior dielectric and EMI shielding performance.

PubMed

Rao, B V Bhaskara; Yadav, Prasad; Aepuru, Radhamanohar; Panda, H S; Ogale, Satishchandra; Kale, S N

2015-07-28

In this study, a novel composite of Fe3O4 nanofiller-decorated single-layer graphene-assembled porous carbon (SLGAPC) with polyvinyl alcohol (PVA) having flexibility and a density of 0.75 g cm(-3) is explored for its dielectric and electromagnetic interference (EMI) response properties. The composite is prepared by the solution casting method and its constituents are optimized as 15 wt% SLGAPC and 20 wt% Fe3O4 through a novel solvent relaxation nuclear magnetic resonance experiment. The PVA-SLGAPC-Fe3O4 composite shows high dielectric permittivity in the range of 1 Hz-10 MHz, enhanced by a factor of 4 as compared to that of the PVA-SLGAPC composite, with a reduced loss by a factor of 2. The temperature dependent dielectric properties reveal the activation energy behaviour with reference to the glass transition temperature (80 °C) of PVA. The dielectric hysteresis with the temperature cycle reveals a remnant polarization. The enhanced dielectric properties are suggested to be the result of improvement in the localized polarization of the integrated interface system (Maxwell-Wagner-Sillars (MWS) polarization) formed by the uniform adsorption of Fe3O4 on the surface of SLGAPC conjugated with PVA. The EMI shielding property of the composite with a low thickness of 0.3 mm in the X-band (8.2-12.4 GHz) shows a very impressive shielding efficiency of ∼15 dB and a specific shielding effectiveness of 20 dB (g cm(-3))(-1), indicating the promising character of this material for flexible EMI shielding applications.

Analysis and design of ferroelectric-based smart antenna structures

NASA Astrophysics Data System (ADS)

Ramesh, Prashanth; Washington, Gregory N.

2009-03-01

Ferroelectrics in microwave antenna systems offer benefits of electronic tunability, compact size and light weight, speed of operation, high power-handling, low dc power consumption, and potential for low loss and cost. Ferroelectrics allow for the tuning of microwave devices by virtue of the nonlinear dependence of their dielectric permittivity on an applied electric field. Experiments on the field-polarization dependence of ferroelectric thin films show variation in dielectric permittivity of up to 50%. This is in contrast to the conventional dielectric materials used in electrical devices which have a relatively constant permittivity, indicative of the linear field-polarization curve. Ferroelectrics, with their variable dielectric constant introduce greater flexibility in correction and control of beam shapes and beam direction of antenna structures. The motivation behind this research is applying ferroelectrics to mechanical load bearing antenna structures, but in order to develop such structures, we need to understand not just the field-permittivity dependence, but also the coupled electro-thermo-mechanical behavior of ferroelectrics. In this paper, two models are discussed: a nonlinear phenomenological model relating the applied fields, strains and temperature to the dielectric permittivity based on the Devonshire thermodynamic framework, and a phenomenological model relating applied fields and temperature to the dielectric loss tangent. The models attempt to integrate the observed field-permittivity, strain-permittivity and temperature-permittivity behavior into one single unified model and extend the resulting model to better fit experimental data. Promising matches with experimental data are obtained. These relations, coupled with the expression for operating frequency vs. the permittivity are then used to understand the bias field vs. frequency behavior of the antenna. Finally, the effect of the macroscopic variables on the antenna radiation efficiency is discussed.

Rationally designed polyimides for high-energy density capacitor applications.

PubMed

Ma, Rui; Baldwin, Aaron F; Wang, Chenchen; Offenbach, Ido; Cakmak, Mukerrem; Ramprasad, Rampi; Sotzing, Gregory A

2014-07-09

Development of new dielectric materials is of great importance for a wide range of applications for modern electronics and electrical power systems. The state-of-the-art polymer dielectric is a biaxially oriented polypropylene (BOPP) film having a maximal energy density of 5 J/cm(3) and a high breakdown field of 700 MV/m, but with a limited dielectric constant (∼2.2) and a reduced breakdown strength above 85 °C. Great effort has been put into exploring other materials to fulfill the demand of continuous miniaturization and improved functionality. In this work, a series of polyimides were investigated as potential polymer materials for this application. Polyimide with high dielectric constants of up to 7.8 that exhibits low dissipation factors (<1%) and high energy density around 15 J/cm(3), which is 3 times that of BOPP, was prepared. Our syntheses were guided by high-throughput density functional theory calculations for rational design in terms of a high dielectric constant and band gap. Correlations of experimental and theoretical results through judicious variations of polyimide structures allowed for a clear demonstration of the relationship between chemical functionalities and dielectric properties.

Integrated field emission array for ion desorption

DOEpatents

Resnick, Paul J; Hertz, Kristin L.; Holland, Christopher; Chichester, David

2016-08-23

An integrated field emission array for ion desorption includes an electrically conductive substrate; a dielectric layer lying over the electrically conductive substrate comprising a plurality of laterally separated cavities extending through the dielectric layer; a like plurality of conically-shaped emitter tips on posts, each emitter tip/post disposed concentrically within a laterally separated cavity and electrically contacting the substrate; and a gate electrode structure lying over the dielectric layer, including a like plurality of circular gate apertures, each gate aperture disposed concentrically above an emitter tip/post to provide a like plurality of annular gate electrodes and wherein the lower edge of each annular gate electrode proximate the like emitter tip/post is rounded. Also disclosed herein are methods for fabricating an integrated field emission array.

Integrated field emission array for ion desorption

DOEpatents

Resnick, Paul J; Hertz, Kristin L; Holland, Christopher; Chichester, David; Schwoebel, Paul

2013-09-17

An integrated field emission array for ion desorption includes an electrically conductive substrate; a dielectric layer lying over the electrically conductive substrate comprising a plurality of laterally separated cavities extending through the dielectric layer; a like plurality of conically-shaped emitter tips on posts, each emitter tip/post disposed concentrically within a laterally separated cavity and electrically contacting the substrate; and a gate electrode structure lying over the dielectric layer, including a like plurality of circular gate apertures, each gate aperture disposed concentrically above an emitter tip/post to provide a like plurality of annular gate electrodes and wherein the lower edge of each annular gate electrode proximate the like emitter tip/post is rounded. Also disclosed herein are methods for fabricating an integrated field emission array.

Negative refraction in one- and two-dimensional lossless plasma dielectric photonic crystals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Guo, B.

2013-07-15

Negative refraction in one- and two-dimensional lossless plasma dielectric photonic crystals consisting of plasma and background materials is theoretically investigated and the necessary conditions for negative refraction in these two structures are obtained. The critical frequency ω{sub 0} and the bandwidth Δω for negative refraction are explored, and the parameter dependence of effects such as plasma filling factor and the dielectric constant of background materials is also examined and discussed.

Nonlinear Dynamics of Electroelastic Dielectric Elastomers

DTIC Science & Technology

2018-01-30

research will significantly advance the basic science and fundamental understanding of how rate- dependent material response couples to large, nonlinear...experimental studies of constrained dielectric elastomer films, a transition in the surface instability mechanism depending on the elastocapillary number...fundamental understanding of how rate- dependent material response couples to large, nonlinear material deformation under applied electrostatic loading to

Control of Silver Diffusion in Low-Temperature Co-Fired Diopside Glass-Ceramic Microwave Dielectrics

PubMed Central

Chou, Chen-Chia; Chang, Chun-Yao; Chen, Guang-Yu; Feng, Kuei-Chih; Tsao, Chung-Ya

2017-01-01

Electrode material for low-temperature co-fired diopside glass-ceramic used for microwave dielectrics was investigated in the present work. Diffusion of silver from the electrode to diopside glass-ceramics degrades the performance of the microwave dielectrics. Two approaches were adopted to resolve the problem of silver diffusion. Firstly, silicon-oxide (SiO2) powder was employed and secondly crystalline phases were chosen to modify the sintering behavior and inhibit silver ions diffusion. Nanoscale amorphous SiO2 powder turns to the quartz phase uniformly in dielectric material during the sintering process, and prevents the silver from diffusion. The chosen crystalline phase mixing into the glass-ceramics enhances crystallinity of the material and inhibits silver diffusion as well. The result provides a method to decrease the diffusivity of silver ions by adding the appropriate amount of SiO2 and appropriate crystalline ceramics in diopside glass-ceramic dielectric materials. Finally, we used IEEE 802.11a 5.8 GHz as target specification to manufacture LTCC antenna and the results show that a good broadband antenna was made using CaMgSi2O6 with 4 wt % silicon oxide. PMID:29286330

Dielectric function of a model insulator

NASA Astrophysics Data System (ADS)

Rezvani, G. A.; Friauf, Robert J.

1993-04-01

We have calculated a dielectric response function ɛ(q,ω) using the random-phase approximation for a model insulator originally proposed by Fry [Phys. Rev. 179, 892 (1969)]. We treat narrow and wide band-gap insulators for the purpose of using results in the simulation of secondary-electron emission from insulators. Therefore, it is important to take into account the contribution of the first and second conduction bands. For the real part of the dielectric function we perform a numerical principal value integration over the first and second Brillouin zone. For the imaginary part we perform a numerical integration involving the δ function that results from the conservation of energy. In order to check the validity of our numerical integration methods we perform a Kramers-Kronig transform of the real part and compare it with the directly calculated imaginary part and vice versa. We discuss fitting the model to the static dielectric constant and the f-sum rule. Then we display the wave number and frequency dependence for solid argon, KCl, and model Si.

New calibration algorithms for dielectric-based microwave moisture sensors

USDA-ARS?s Scientific Manuscript database

New calibration algorithms for determining moisture content in granular and particulate materials from measurement of the dielectric properties at a single microwave frequency are proposed. The algorithms are based on identifying empirically correlations between the dielectric properties and the par...

Solid-State Ultracapacitor for Improved Energy Storage

NASA Technical Reports Server (NTRS)

Nabors, Sammy

2015-01-01

NASA's Marshall Space Flight Center has developed a solid-state ultracapacitor using a novel nanocomposite, dielectric material. The material's design is based on the internal barrier layer capacitance (IBLC) concept, and it uses novel dielectric and metallic conductive ink formulations. Novel processing methods developed by NASA provide for unique dielectric properties at the grain level. Nanoscale raw material powders are tailored using a variety of techniques and then formulated into a special ink. This dielectric ink is used with novel metallic conductive ink to print a capacitor layer structure into any design necessary to meet a range of technical requirements. The innovation is intended to replace current range safety batteries that NASA uses to power the systems that destroy off-course space vehicles. A solid-state design provides the needed robustness and safety for this demanding application.

Dielectric and Electromechanical Properties of Polyurethane and Polydimethylsiloxane Blends and their Nanocomposites

NASA Astrophysics Data System (ADS)

Cakmak, Enes

Conventional means of converting electrical energy to mechanical work are generally considered too noisy and bulky for many contemporary technologies such as microrobotic, microfluidic, and haptic devices. Dielectric electroactive polymers (D-EAPs) constitude a growing class of electroactive polymers (EAP) that are capable of producing mechanica work induced by an applied electric field. D-EAPs are considered remarkably efficient and well suited for a wide range of applications, including ocean-wave energy harvesters and prosthetic devices. However, the real-world application of D-EAPs is very limited due to a number of factors, one of which is the difficulty of producing high actuation strains at acceptably low electric fields. D-EAPs are elastomeric polymers and produce large strain response induced by external electric field. The electromechanical properties of D-EAPs depend on the dielectric properties and mechanical properties of the D-EAP. In terms of dielectric behavior, these actuators require a high dielectric constant, low dielectric loss, and high dielectric strength to produce an improved actuation response. In addition to their dielectric properties, the mechanical properties of D-EAPs, such as elastic moduli and hysteresis, are also of importance. Therefore, material properties are a key feature of D-EAP technology. DE actuator materials reported in the literature cover many types of elastomers and their composites formed with dielectric fillers. Along with polymeric matrix materials, various ceramic, metal, and organic fillers have been employed in enhancing dielectric behavior of DEs. This work describes an effort to characterize elastomer blends and composites of different matrix and dielectric polymer fillers according to their dielectric, mechanical, and electromechanical responses. This dissertation focuses on the development and characterization of polymer-polymer blends and composites from a high-k polyurethane (PU) and polydimethylsiloxane (PDMS) elastomers. Two different routes were followed with respect to elastomer processing: The first is a simple solution blending of the two types of elastomers, and the second is based on preparation of composites from PU nanofiber webs and PDMS elastomer. Both the blends and the nanofiber web composites showed improved dielectric and actuation characteristics.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Donnelly, Vincent M.; Kornblit, Avinoam

The field of plasma etching is reviewed. Plasma etching, a revolutionary extension of the technique of physical sputtering, was introduced to integrated circuit manufacturing as early as the mid 1960s and more widely in the early 1970s, in an effort to reduce liquid waste disposal in manufacturing and achieve selectivities that were difficult to obtain with wet chemistry. Quickly, the ability to anisotropically etch silicon, aluminum, and silicon dioxide in plasmas became the breakthrough that allowed the features in integrated circuits to continue to shrink over the next 40 years. Some of this early history is reviewed, and a discussionmore » of the evolution in plasma reactor design is included. Some basic principles related to plasma etching such as evaporation rates and Langmuir–Hinshelwood adsorption are introduced. Etching mechanisms of selected materials, silicon, silicon dioxide, and low dielectric-constant materials are discussed in detail. A detailed treatment is presented of applications in current silicon integrated circuit fabrication. Finally, some predictions are offered for future needs and advances in plasma etching for silicon and nonsilicon-based devices.« less

Ultra-compact Marx-type high-voltage generator

DOEpatents

Goerz, David A.; Wilson, Michael J.

2000-01-01

An ultra-compact Marx-type high-voltage generator includes individual high-performance components that are closely coupled and integrated into an extremely compact assembly. In one embodiment, a repetitively-switched, ultra-compact Marx generator includes low-profile, annular-shaped, high-voltage, ceramic capacitors with contoured edges and coplanar extended electrodes used for primary energy storage; low-profile, low-inductance, high-voltage, pressurized gas switches with compact gas envelopes suitably designed to be integrated with the annular capacitors; feed-forward, high-voltage, ceramic capacitors attached across successive switch-capacitor-switch stages to couple the necessary energy forward to sufficiently overvoltage the spark gap of the next in-line switch; optimally shaped electrodes and insulator surfaces to reduce electric field stresses in the weakest regions where dissimilar materials meet, and to spread the fields more evenly throughout the dielectric materials, allowing them to operate closer to their intrinsic breakdown levels; and uses manufacturing and assembly methods to integrate the capacitors and switches into stages that can be arranged into a low-profile Marx generator.

Metal-Halide Perovskites for Gate Dielectrics in Field-Effect Transistors and Photodetectors Enabled by PMMA Lift-Off Process.

PubMed

Daus, Alwin; Roldán-Carmona, Cristina; Domanski, Konrad; Knobelspies, Stefan; Cantarella, Giuseppe; Vogt, Christian; Grätzel, Michael; Nazeeruddin, Mohammad Khaja; Tröster, Gerhard

2018-06-01

Metal-halide perovskites have emerged as promising materials for optoelectronics applications, such as photovoltaics, light-emitting diodes, and photodetectors due to their excellent photoconversion efficiencies. However, their instability in aqueous solutions and most organic solvents has complicated their micropatterning procedures, which are needed for dense device integration, for example, in displays or cameras. In this work, a lift-off process based on poly(methyl methacrylate) and deep ultraviolet lithography on flexible plastic foils is presented. This technique comprises simultaneous patterning of the metal-halide perovskite with a top electrode, which results in microscale vertical device architectures with high spatial resolution and alignment properties. Hence, thin-film transistors (TFTs) with methyl-ammonium lead iodide (MAPbI 3 ) gate dielectrics are demonstrated for the first time. The giant dielectric constant of MAPbI 3 (>1000) leads to excellent low-voltage TFT switching capabilities with subthreshold swings ≈80 mV decade -1 over ≈5 orders of drain current magnitude. Furthermore, vertically stacked low-power Au-MAPbI 3 -Au photodetectors with close-to-ideal linear response (R 2 = 0.9997) are created. The mechanical stability down to a tensile radius of 6 mm is demonstrated for the TFTs and photodetectors, simultaneously realized on the same flexible plastic substrate. These results open the way for flexible low-power integrated (opto-)electronic systems based on metal-halide perovskites. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Method for distributing chemicals through a fibrous material using low-headspace dielectric heating

DOEpatents

Banerjee, Sujit; Malcolm, Earl

2002-01-01

System and method for diffusing chemicals rapidly and evenly into and through fibrous material, such as wood. Chemicals are introduced into the fibrous material by applying the chemicals to the fibrous material. After treating the fibrous material with the chemicals, the fibrous material is maintained under low-headspace conditions. Thermal energy or dielectric heating, such as microwave or radio frequency energy, is applied to the fibrous material. As a result, the chemicals are able to distribute evenly and quickly throughout the fibrous material.

Measurement of the complex refractive index and complex dielectric permittivity of T.P.S. Space Shuttle tile materials at millimeter wavelengths

NASA Technical Reports Server (NTRS)

Afsar, Mohammed Nurul; Chi, Hua; Li, Xiaohui

1990-01-01

Complex refractive index and dielectric permittivity studies of presently used Space Shuttle tile materials at millimeter wavelengths reveal these tiles to exhibit similar absorption characteristics to those of fused silica materials. This absorption is mainly related to the water content in the specimen. A strong birefringence is observed at least in one of these fibrous refractory composite materials.

Super Dielectric Material Based Capacitors: Punched Membrane/Gel

NASA Astrophysics Data System (ADS)

Petty, C. W.; Phillips, J.

2018-05-01

Extensive testing showed, as predicted, that punched membranes, filled with a gel containing aqueous salt solutions, behave as superdielectric materials (SDM). Punched membrane superdielectrics employed herein consisted of a commercial cellulose based membrane material, Celgard 16 μ thick, a material frequently used as a separator material in supercapacitors, into which macroscopic holes (ca. 2.5 mm) were punched with a laser cutter, and the holes subsequently filled with a gel-like material composed of fumed silica, NaCl and water. The gross dielectric constants measured, generally > 105, and the energy densities, > 40 J/cm3 during slow discharge, were in the range expected for superdielectric materials. The measured capacitance and energy density tracked the number of holes punched/area filled with the dielectric gel. Also, the observed power law decrease in all parameters including energy, power and capacitance, followed the same trends observed in other classes of SDM. Control studies included testing dielectrics composed of Celgard into which no holes were punched, but the SDM gel spread, also produced values consistent with the SDM model: no measurable capacitance using the standard protocol. Finally, the values measured suggest these materials rival the energy density of some common battery types at low discharge rates, and surpass the best commercial supercapacitors at low discharge rates.

Realization and Integration of Large Lattice Mismatched Materials for Device Innovation: A Comprehensive Approach to the Underlying Science and Practical Application

DTIC Science & Technology

2011-07-08

Nastasi. Effects of Hydrogen Implantation Conditions on the Trapping of Hydrogen in InP, Applied Physics Letters ( ) 2006/07/25 10:01:57 1 TOTAL: 6...formation of 20 nm PMMA cylinder in a matrix of polystyrene. This cylinder pattern can be transferred to an underlying dielectric mask and used in...allowing for selective hydrogen implantation . The implanted wafers were bonded to acceptor substrates and transfer was initiated. The surface of the

Materials-Process Interactions in Ternary Alloy Semiconductors.

DTIC Science & Technology

1984-08-01

high, the surface potential can be * modulated . PECVD SiO. appears to be a viable candidate as a gate dielectric for * Irf ,fO-4A)s MISFETs...it is desirable to integrate the detectors with circuits capable of performing signal processing functions. These circuits can either be fabricated in...to be a major problem in In0. 5 3Ga 0.* 47 s. 25 S. . . . . 13821 -1 R I (a) CROSS SECTION KEYBOARD 210M ANNEALING CHAMBER GATE TRIGG TRIAC

Integrated Optical Transmitter and Receiver

DTIC Science & Technology

1983-02-01

pulses appear. Only one propagating domain is present at any given time, and when one domain is extracted the next one forms at the cathode. The...formation of a propagating domain results in a reduction in current through T the device, while the current increases after a domain is extracted . As a...net * Vb2 i (3.15) where c is the dielectric constant of the material. The transconductance gm is given by g id _ 1 + + 1 2 gm 5= _ 7 isat[(Vgs Vbi)( v

Origin of the colossal dielectric response of Pr0.6 Ca0.4 Mn O3

NASA Astrophysics Data System (ADS)

Biškup, N.; de Andrés, A.; Martinez, J. L.; Perca, C.

2005-07-01

We report the detailed study of dielectric response of Pr0.6Ca0.4MnO3 (PCMO), a member of the manganite family showing colossal magnetoresistance. Measurements have been performed on four polycrystalline samples and four single crystals, allowing us to compare and extract the essence of dielectric response in the material. High-frequency dielectric function is found to be ɛHF=30 , as expected for the perovskite material. Dielectric relaxation is found in the frequency window of 20Hzto1MHz at temperatures of 50-200K that yields to colossal low-frequency dielectric function, i.e., the static dielectric constant. The static dielectric constant is always colossal, but varies considerably in different samples from ɛ(0)=103to105 . The measured data can be simulated very well by blocking (surface barrier) capacitance in series with sample resistance. This indicates that the large dielectric constant in PCMO arises from the Schottky barriers at electrical contacts. Measurements in magnetic field and with dc bias support this interpretation. Colossal magnetocapacitance observed in the title compound is thus attributed to extrinsic effects. Weak anomaly at the charge ordering temperature can also be attributed to interplay of sample and contact resistance. We comment on our results in the framework of related studies by other groups.

Electromechanical performance analysis of inflated dielectric elastomer membrane for micro pump applications

NASA Astrophysics Data System (ADS)

Saini, Abhishek; Ahmad, Dilshad; Patra, Karali

2016-04-01

Dielectric elastomers have received a great deal of attention recently as potential materials for many new types of sensors, actuators and future energy generators. When subjected to high electric field, dielectric elastomer membrane sandwiched between compliant electrodes undergoes large deformation with a fast response speed. Moreover, dielectric elastomers have high specific energy density, toughness, flexibility and shape processability. Therefore, dielectric elastomer membranes have gained importance to be applied as micro pumps for microfluidics and biomedical applications. This work intends to extend the electromechanical performance analysis of inflated dielectric elastomer membranes to be applied as micro pumps. Mechanical burst test and cyclic tests were performed to investigate the mechanical breakdown and hysteresis loss of the dielectric membrane, respectively. Varying high electric field was applied on the inflated membrane under different static pressure to determine the electromechanical behavior and nonplanar actuation of the membrane. These tests were repeated for membranes with different pre-stretch values. Results show that pre-stretching improves the electromechanical performance of the inflated membrane. The present work will help to select suitable parameters for designing micro pumps using dielectric elastomer membrane. However this material lacks durability in operation.This issue also needs to be investigated further for realizing practical micro pumps.

Plasma polymerized high energy density dielectric films for capacitors

NASA Technical Reports Server (NTRS)

Yamagishi, F. G.

1983-01-01

High energy density polymeric dielectric films were prepared by plasma polymerization of a variety of gaseous monomers. This technique gives thin, reproducible, pinhole free, conformable, adherent, and insoluble coatings and overcomes the processing problems found in the preparation of thin films with bulk polymers. Thus, devices are prepared completely in a vacuum environment. The plasma polymerized films prepared all showed dielectric strengths of greater than 1000 kV/cm and in some cases values of greater than 4000 kV/cm were observed. The dielectric loss of all films was generally less than 1% at frequencies below 10 kHz, but this value increased at higher frequencies. All films were self healing. The dielectric strength was a function of the polymerization technique, whereas the dielectric constant varied with the structure of the starting material. Because of the thin films used (thickness in the submicron range) surface smoothness of the metal electrodes was found to be critical in obtaining high dielectric strengths. High dielectric strength graft copolymers were also prepared. Plasma polymerized ethane was found to be thermally stable up to 150 C in the presence of air and 250 C in the absence of air. No glass transitions were observed for this material.

Water and ion transport in ultra-adsorbing porous magnesium carbonate studied by dielectric spectroscopy

NASA Astrophysics Data System (ADS)

Pochard, Isabelle; Frykstrand, Sara; Ahlström, Olle; Forsgren, Johan; Strømme, Maria

2014-01-01

Porous materials are used in application areas ranging from drug and vaccine delivery, medical implants, molecular sieves and cosmetics to catalysis and humidity control. In the present work, we employed an alternative approach to gain in-depth understanding about water interaction properties in such materials by the use of dielectric spectroscopy and thereby show that it is possible to obtain information that is not accessible from the more commonly employed water interaction analysis techniques. Specifically, the complex dielectric response of Upsalite, a novel, super-hydroscopic, high-surface area, porous magnesium carbonate material was measured in isothermal frequency scans between 10-3 and 106 Hz at controlled relative humidity (RH). We found the dielectric constant of the dry material to be 1.82. The ratio of bound to free water present in Upsalite after adsorption at room temperature was found to be high irrespective of the surrounding humidity with values ranging from ˜67% to ˜90%. We further found that OH- ions are the charge carriers responsible for the electrode polarization observed in the dielectric response and that the amount of these ions that are free to move in the material corresponds to a concentration of the order of 1-10 μmol l-1 independent of RH. Finally, the OH- diffusion coefficient displayed a drastic decrease with decreasing RH, typical of transport in unsaturated conditions. The presented results provide detailed insight about water interactions in the novel water adsorbing material under study and it is foreseen that the employed analysis methods can be used to evaluate other types of moisture adsorbing materials as well as the movement of functional species in the pores of inorganic drug delivery materials and materials tailored for adsorption of harmful charged species.

Dielectric Properties of Ca0.7Bi0.3Ti0.7Cr0.3O3 (CBTC)-CaCu3Ti4O12 (CCTO) Composite

NASA Astrophysics Data System (ADS)

Mallmann, E. J. J.; Silva, M. A. S.; Sombra, A. S. B.; Botelho, M. A.; Mazzetto, S. E.; de Menezes, A. S.; Almeida, A. F. L.; Fechine, P. B. A.

2015-01-01

The main object of this work is to study two materials with giant dielectric constants: CaCu3Ti4O12 (CCTO) and Ca0.7Bi0.3Ti0.7Cr0.3O3 (CBTC). CBTC1- x -CCTO x composites were also obtained to create a new dielectric material with dielectric properties between these two phases. Structural properties were studied by x-ray powder diffraction (XRPD), Fourier transform infrared spectroscopy (FT-IR), Raman spectroscopy and dielectric measurements. CCTO showed a cubic phase and CBTC an orthorhombic phase. An interesting result was that the dielectric constant ( K) did not follow the rule of the mixture of Lichtnecker, and this happened due to the presence of other phases of its crystalline structure, which decreases the value of K when compared to the predicted values of Lichtnecker. It was also found that the dielectric properties of the composite are very promising for use in microelectronics, according to the miniaturization factor, which is crucial for those applications.

Analysis of the possibilities of using dielectric foam in the construction of composite high voltage post-insulators

NASA Astrophysics Data System (ADS)

Mączka, T.; Paściak, G.; Jarski, A.; Piątek, M.

2016-02-01

This paper presents the construction and basic performance parameters of the innovative tubular construction of high voltage composite insulator filled with the lightweight foamed electroinsulating material. The possibility of using of the commercially available expanding foams for preparing the lightweight foamed dielectric materials was analysed. The expanding foams of silicone RTV and compositions based on epoxy resin and LSR silicone were taken into account. The lightweight foamed dielectric materials were prepared according to the own foaming technology. In this work the experimental results on the use of the selected foams for the preparing of the lightweight filling materials to the tubular structure of composite insulator of 110 kV are presented.

Processing Waveform-Based NDE

NASA Technical Reports Server (NTRS)

Roth, Donald J (Inventor)

2011-01-01

A computer implemented process for simultaneously measuring the velocity of terahertz electromagnetic radiation in a dielectric material sample without prior knowledge of the thickness of the sample and for measuring the thickness of a material sample using terahertz electromagnetic radiation in a material sample without prior knowledge of the velocity of the terahertz electromagnetic radiation in the sample is disclosed and claimed. Utilizing interactive software the process evaluates, in a plurality of locations, the sample for microstructural variations and for thickness variations and maps the microstructural and thickness variations by location. A thin sheet of dielectric material may be used on top of the sample to create a dielectric mismatch. The approximate focal point of the radiation source (transceiver) is initially determined for good measurements.

Using COMSOL Multiphysics Software to Model Anisotropic Dielectric and Metamaterial Effects in Folded-Waveguide Traveling-Wave Tube Slow-Wave Circuits

NASA Technical Reports Server (NTRS)

Starinshak, David P.; Smith, Nathan D.; Wilson, Jeffrey D.

2008-01-01

The electromagnetic effects of conventional dielectrics, anisotropic dielectrics, and metamaterials were modeled in a terahertz-frequency folded-waveguide slow-wave circuit. Results of attempts to utilize these materials to increase efficiency are presented.

Let's Measure the Dielectric Constant of a Piece of Paper!

ERIC Educational Resources Information Center

Karlow, Edwin A.

1991-01-01

Described is a simple circuit with which students can observe the effect of common dielectric materials in a capacitor and measure the dielectric constant of a piece of paper. Discussed are the theory, apparatus construction, and experimental procedures for this activity. (CW)

Role of copper in time dependent dielectric breakdown of porous organo-silicate glass low-k materials

NASA Astrophysics Data System (ADS)

Zhao, Larry; Pantouvaki, Marianna; Croes, Kristof; Tőkei, Zsolt; Barbarin, Yohan; Wilson, Christopher J.; Baklanov, Mikhail R.; Beyer, Gerald P.; Claeys, Cor

2011-11-01

The role of copper in time dependent dielectric breakdown (TDDB) of a porous low-k dielectric with TaN/Ta barrier was investigated on a metal-insulator-metal capacitor configuration where Cu ions can drift into the low-k film by applying a positive potential on the top while they are not permitted to enter the low-k dielectric if a negative potential is applied on the top. No difference in TDDB performance was observed between the positive and negative bias conditions, suggesting that Cu cannot penetrate TaN/Ta barrier to play a critical role in the TDDB of porous low-k material.

Reversible Phase Transition with Ultralarge Dielectric Relaxation Behaviors in Succinimide Lithium(I) Hybrids.

PubMed

Tang, Yun-Zhi; Wang, Bin; Zhou, Hai-Tao; Chen, Shao-Peng; Tan, Yu-Hui; Wang, Chang-Feng; Yang, Chang-Shan; Wen, He-Rui

2018-02-05

Dielectric relaxations have widely applied on high permittivity capacitors, dielectric switches, ferroelectrics, pyroelectrics, and electrical insulating materials. However, few investigations of large dielectric relaxation behaviors on organic-inorganic hybrid materials have been documented before. Here we present a novel two-dimensional succinimide lithium(I) hybrid compound, [Li(PDD) 2 ClO 4 ] n , 1, (PDD = 2,5-pyrrolidinedione = succinimide) which shows reversible phase transition behavior in the vicinity of 228 K accompanied by an unusual symmetry breaking from I4 1 /amd to C2/c. X-ray single crystal diffractions analysis indicates the twist motion of pyrrolidine heterocycles, and order-disorder motion of ClO 4 - anions triggered the reversible phase transition. By means of an intuitive crystallographic model (rattling ion model), we further illustrated the mechanism of the interesting reversible phase transition. Particularly, 1 shows ultralarge dielectric relaxation behavior in the vicinity of the phase transition by its dielectric constant dependence on temperatures and frequencies as well as its Cole-Cole relation.

Increase of dielectric constant in PVDF by incorporating La{sub 1.8}Sr{sub 0.2}NiO{sub 4} into its matrix

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kumar, Rajnish, E-mail: rajnish@iitp.ac.in; Goswami, Ashwin M., E-mail: ashwin.nanoplast@gmail.com; Kar, Manoranjan, E-mail: mano-iitg@yahoo.com

2016-05-06

To obtain the material with high dielectric constant and high dielectric strength for the technological applications, nanocomposite of Lanthanum Strontium Nickelete (La{sub 1.8}Sr{sub 0.2}NiO{sub 4}) as nanofiller and polyvinylidene fluoride (PVDF) as polymer matrix has been prepared. The different nanofiler weight concentration varies from 2-8 weight percent. X-ray diffraction technique confirms the phase formation of nanocomposite. Differential scanning calorimeter (DSC) has been employed to study the percentage of crystallinity and Impedance measurement has been carried out to study the dielectric constant. DSC analysis shows decreasing trend of crystallinity whereas impedance analysis gives increasing dielectric constant with increasing La{sub 1.8}Sr{sub 0.2}NiO{submore » 4} concentration in the nanocomposite. Also, these materials can be used as insulator in the transformer as the strength and dielectric behavior of present composite meets the technological requirements.« less

Characterization of dielectric properties of nanocellulose from wood and algae for electrical insulator applications.

PubMed

Le Bras, David; Strømme, Maria; Mihranyan, Albert

2015-05-07

Cellulose is one of the oldest electrically insulating materials used in oil-filled high-power transformers and cables. However, reports on the dielectric properties of nanocellulose for electrical insulator applications are scarce. The aim of this study was to characterize the dielectric properties of two nanocellulose types from wood, viz., nanofibrillated cellulose (NFC), and algae, viz., Cladophora cellulose, for electrical insulator applications. The cellulose materials were characterized with X-ray diffraction, nitrogen gas and moisture sorption isotherms, helium pycnometry, mechanical testing, and dielectric spectroscopy at various relative humidities. The algae nanocellulose sample was more crystalline and had a lower moisture sorption capacity at low and moderate relative humidities, compared to NFC. On the other hand, it was much more porous, which resulted in lower strength and higher dielectric loss than for NFC. It is concluded that the solid-state properties of nanocellulose may have a substantial impact on the dielectric properties of electrical insulator applications.

Ni-coated CaCu3Ti4O12/low density polyethylene composite material with ultra-high dielectric permittivity

NASA Astrophysics Data System (ADS)

Gao, L.; Wang, X.; Chen, Y.; Chi, Q. G.; Lei, Q. Q.

2015-08-01

We report a novel low-density polyethylene (LDPE) composite filled with nickel-coated CaCu3Ti4O12 ceramic (denoted as CCTO@Ni), prepared by a melt mixing technique, and its prominent dielectric characteristics. The effects of magnetic field treatment on the dielectric properties of CCTO@Ni/LDPE composite films with a low filler concentration of 10 vol.% were investigated. Our results show that the dielectric permittivity, loss tangent, and conductivity of the LDPE composite films initially improved and then decreased with increasing treatment time under the applied magnetic field. Magnetic field treatment for 60 min led to an ultra-high dielectric permittivity value of 1.57 × 104, four orders of magnitude higher than that of the pure LDPE material. Our results indicate that the magnetic treatment may have induced a percolation effect and enhanced the interfacial polarization of the CCTO@Ni/LDPE composite, resulting in the observed changes in its dielectric properties.

Crosslinked polyarylene ether nitrile film as flexible dielectric materials with ultrahigh thermal stability.

PubMed

Yang, Ruiqi; Wei, Renbo; Li, Kui; Tong, Lifen; Jia, Kun; Liu, Xiaobo

2016-11-09

Dielectric film with ultrahigh thermal stability based on crosslinked polyarylene ether nitrile is prepared and characterized. The film is obtained by solution-casting of polyarylene ether nitrile terminated phthalonitrile (PEN-Ph) combined with post self-crosslinking at high temperature. The film shows a 5% decomposition temperature over 520 °C and a glass transition temperature (T g ) around 386 °C. Stable dielectric constant and low dielectric loss are observed for this film in the frequency range of 100-200 kHz and in the temperature range of 25-300 °C. The temperature coefficient of dielectric constant is less than 0.001 °C -1 even at 400 °C. By cycling heating and cooling up to ten times or heating at 300 °C for 12 h, the film shows good reversibility and robustness of the dielectric properties. This crosslinked PEN film will be a potential candidate as high performance film capacitor electronic devices materials used at high temperature.

Crosslinked polyarylene ether nitrile film as flexible dielectric materials with ultrahigh thermal stability

NASA Astrophysics Data System (ADS)

Yang, Ruiqi; Wei, Renbo; Li, Kui; Tong, Lifen; Jia, Kun; Liu, Xiaobo

2016-11-01

Dielectric film with ultrahigh thermal stability based on crosslinked polyarylene ether nitrile is prepared and characterized. The film is obtained by solution-casting of polyarylene ether nitrile terminated phthalonitrile (PEN-Ph) combined with post self-crosslinking at high temperature. The film shows a 5% decomposition temperature over 520 °C and a glass transition temperature (Tg) around 386 °C. Stable dielectric constant and low dielectric loss are observed for this film in the frequency range of 100-200 kHz and in the temperature range of 25-300 °C. The temperature coefficient of dielectric constant is less than 0.001 °C-1 even at 400 °C. By cycling heating and cooling up to ten times or heating at 300 °C for 12 h, the film shows good reversibility and robustness of the dielectric properties. This crosslinked PEN film will be a potential candidate as high performance film capacitor electronic devices materials used at high temperature.

Negative Capacitance in BaTiO3/BiFeO3 Bilayer Capacitors.

PubMed

Hou, Ya-Fei; Li, Wei-Li; Zhang, Tian-Dong; Yu, Yang; Han, Ren-Lu; Fei, Wei-Dong

2016-08-31

Negative capacitances provide an approach to reduce heat generations in field-effect transistors during the switch processes, which contributes to further miniaturization of the conventional integrated circuits. Although there are many studies about negative capacitances using ferroelectric materials, the direct observation of stable ferroelectric negative capacitances has rarely been reported. Here, we put forward a dc bias assistant model in bilayer capacitors, where one ferroelectric layer with large dielectric constant and the other ferroelectric layer with small dielectric constant are needed. Negative capacitances can be obtained when external dc bias electric fields are larger than a critical value. Based on the model, BaTiO3/BiFeO3 bilayer capacitors are chosen as study objects, and negative capacitances are observed directly. Additionally, the upward self-polarization effect in the ferroelectric layer reduces the critical electric field, which may provide a method for realizing zero and/or small dc bias assistant negative capacitances.

Water-gel for gating graphene transistors.

PubMed

Kim, Beom Joon; Um, Soong Ho; Song, Woo Chul; Kim, Yong Ho; Kang, Moon Sung; Cho, Jeong Ho

2014-05-14

Water, the primary electrolyte in biology, attracts significant interest as an electrolyte-type dielectric material for transistors compatible with biological systems. Unfortunately, the fluidic nature and low ionic conductivity of water prevents its practical usage in such applications. Here, we describe the development of a solid state, megahertz-operating, water-based gate dielectric system for operating graphene transistors. The new electrolyte systems were prepared by dissolving metal-substituted DNA polyelectrolytes into water. The addition of these biocompatible polyelectrolytes induced hydrogelation to provide solid-state integrity to the system. They also enhanced the ionic conductivities of the electrolytes, which in turn led to the quick formation of an electric double layer at the graphene/electrolyte interface that is beneficial for modulating currents in graphene transistors at high frequencies. At the optimized conditions, the Na-DNA water-gel-gated flexible transistors and inverters were operated at frequencies above 1 MHz and 100 kHz, respectively.

CMUTs with High-K Atomic Layer Deposition Dielectric Material Insulation Layer

PubMed Central

Xu, Toby; Tekes, Coskun; Degertekin, F. Levent

2014-01-01

Use of high-κ dielectric, atomic layer deposition (ALD) materials as an insulation layer material for capacitive micromachined ultrasonic transducers (CMUTs) is investigated. The effect of insulation layer material and thickness on CMUT performance is evaluated using a simple parallel plate model. The model shows that both high dielectric constant and the electrical breakdown strength are important for the dielectric material, and significant performance improvement can be achieved, especially as the vacuum gap thickness is reduced. In particular, ALD hafnium oxide (HfO2) is evaluated and used as an improvement over plasma-enhanced chemical vapor deposition (PECVD) silicon nitride (SixNy) for CMUTs fabricated by a low-temperature, complementary metal oxide semiconductor transistor-compatible, sacrificial release method. Relevant properties of ALD HfO2 such as dielectric constant and breakdown strength are characterized to further guide CMUT design. Experiments are performed on parallel fabricated test CMUTs with 50-nm gap and 16.5-MHz center frequency to measure and compare pressure output and receive sensitivity for 200-nm PECVD SixNy and 100-nm HfO2 insulation layers. Results for this particular design show a 6-dB improvement in receiver output with the collapse voltage reduced by one-half; while in transmit mode, half the input voltage is needed to achieve the same maximum output pressure. PMID:25474786

K-Band Latching Switches

NASA Technical Reports Server (NTRS)

Piotrowski, W. S.; Raue, J. E.

1984-01-01

Design, development, and tests are described for two single-pole-double-throw latching waveguide ferrite switches: a K-band switch in WR-42 waveguide and a Ka-band switch in WR-28 waveguide. Both switches have structurally simple junctions, mechanically interlocked without the use of bonding materials; they are impervious to the effects of thermal, shock, and vibration stresses. Ferrite material for the Ka-band switch with a proper combination of magnetic and dielectric properties was available and resulted in excellent low loss, wideband performance. The high power handling requirement of the K-band switch limited the choice of ferrite to nickel-zinc compositions with adequate magnetic properties, but with too low relative dielectric constant. The relative dielectric constant determines the junction dimensions for given frequency responses. In this case the too low value unavoidably leads to a larger than optimum junction volume, increasing the insertion loss and restricting the operating bandwidth. Efforts to overcome the materials-related difficulties through the design of a composite junction with increased effective dielectric properties efforts to modify the relative dielectric constant of nickel-zinc ferrite are examined.

GIANT DIELECTRIC TUNABLE BEHAVIOR OF Pr-DOPED SrTiO3 AT LOW TEMPERATURE

NASA Astrophysics Data System (ADS)

Wei, T.; Song, Q. G.; Zhou, Q. J.; Li, Z. P.; Chen, Y. F.; Qi, X. L.; Guo, S. Q.; Liu, J.-M.

2012-03-01

Contrast with conventional dielectric tunable materials such as barium strontium titanate (BST), here, we report one new dielectric tunable behavior for Sr1-xPrxTiO3 system at low temperature. Giant dielectric tunability is confirmed in this system. More importantly, the efficient dielectric tunability can be realized just using small bias field. In addition, critical threshold electric field is also confirmed. This phenomenon may be related with the competition interaction of polar state with quantum fluctuations.

Advanced concepts for transformers pressboard dielectric constant and mechanical strength

NASA Astrophysics Data System (ADS)

1982-03-01

Of the numerous electrical considerations in a material, the value of the dielectric constant serves as an important criterion in designing proper insulation systems. Ways to reduce the dielectric constant of solid (fibrous) insulating materials were investigated. A literature search was made on cellulosic and synthetic fibers and also additives which offered the potential for dielectric constant reduction of the solid insulation. Sample board structures were produced in the laboratory and tested for electrical, mechanical and chemical characteristics. Electrical tests determined the suitability of the material at transformer test and operating conditions. The mechanical tests established the physical characteristics of the modified board structures. Chemical tests checked the conductivity of the aqueous extract, acidity, and ash content. Further, compatibility with transformer oil and some aging tests were performed. An actual computer transformer design was made based on one of the modified board structures and the reduction in core steel and transformer losses were shown.

Effects of monoclinic symmetry on the properties of biaxial liquid crystals

NASA Astrophysics Data System (ADS)

Solodkov, Nikita V.; Nagaraj, Mamatha; Jones, J. Cliff

2018-04-01

Tilted smectic liquid crystal phases such as the smectic-C phase seen in calamitic liquid crystals are usually treated using the assumption of biaxial orthorhombic symmetry. However, the smectic-C phase has monoclinic symmetry, thereby allowing disassociation of the principal optic and dielectric axes based on symmetry and invariance principles. This is demonstrated here by comparing optical and dielectric measurements for two materials with highly first-order direct transitions from nematic to smectic-C phases. The results show a high difference between the orientations of the principal axes sets, which is interpreted as the existence of two distinct cone angles for optical and dielectric frequencies. Both materials exhibit an increasing degree of monoclinic behavior with decreasing temperature. Due to fast switching speeds, ferroelectric smectic-C* materials are important for fast modulators and LCoS devices, where the dielectric biaxiality influences device operation.

The Impact of Dielectric Material and Temperature on Dielectric Charging in RF MEMS Capacitive Switches

NASA Astrophysics Data System (ADS)

Papaioannou, George

The present work attempts to provide a better insight on the dielectric charging in RF-MEMS capacitive switches that constitutes a key issue limiting parameter of their commercialization. The dependence of the charging process on the nature of dielectric materials widely used in these devices, such as SiO2, Si3N4, AlN, Al2O3, Ta2O5, HfO2, which consist of covalent or ionic bonds and may exhibit piezoelectric properties is discussed taking into account the effect of deposition conditions and resulting material stoichiometry. Another key issue parameter that accelerates the charging and discharging processes by providing enough energy to trapped charges to be released and to dipoles to overcome potential barriers and randomize their orientation is the temperature will be investigated too. Finally, the effect of device structure will be also taken into account.

High Dielectric Low Loss Transparent Glass Material Based Dielectric Resonator Antenna with Wide Bandwidth Operation

NASA Astrophysics Data System (ADS)

Mehmood, Arshad; Zheng, Yuliang; Braun, Hubertus; Hovhannisyan, Martun; Letz, Martin; Jakoby, Rolf

2015-01-01

This paper presents the application of new high permittivity and low loss glass material for antennas. This glass material is transparent. A very simple rectangular dielectric resonator antenna is designed first with a simple microstrip feeding line. In order to widen the bandwidth, the feed of the design is modified by forming a T-shaped feeding. This new design enhanced the bandwidth range to cover the WLAN 5 GHz band completely. The dielectric resonator antenna cut into precise dimensions is placed on the modified microstrip feed line. The design is simple and easy to manufacture and also very compact in size of only 36 × 28 mm. A -10 dB impedance bandwidth of 18% has been achieved, which covers the frequency range from 5.15 GHz to 5.95 GHz. Simulations of the measured return loss and radiation patterns are presented and discussed.

Organic/Inorganic Nano-hybrids with High Dielectric Constant for Organic Thin Film Transistor Applications

NASA Astrophysics Data System (ADS)

Yu, Yang-Yen; Jiang, Ai-Hua; Lee, Wen-Ya

2016-11-01

The organic material soluble polyimide (PI) and organic-inorganic hybrid PI-barium titanate (BaTiO3) nanoparticle dielectric materials (IBX, where X is the concentration of BaTiO3 nanoparticles in a PI matrix) were successfully synthesized through a sol-gel process. The effects of various BaTiO3 contents on the hybrid film performance and performance optimization were investigated. Furthermore, pentacene-based organic thin film transistors (OTFTs) with PI-BaTiO3/polymethylmethacrylate or cyclic olefin copolymer (COC)-modified gate dielectrics were fabricated and examined. The hybrid materials showed effective dispersion of BaTiO3 nanoparticles in the PI matrix and favorable thermal properties. X-ray diffraction patterns revealed that the BaTiO3 nanoparticles had a perovskite structure. The hybrid films exhibited high formability and planarity. The IBX hybrid dielectric films exhibited tunable insulating properties such as the dielectric constant value and capacitance in ranges of 4.0-8.6 and 9.2-17.5 nF cm-2, respectively. Adding the modified layer caused the decrease of dielectric constant values and capacitances. The modified dielectric layer without cross-linking displayed a hydrophobic surface. The electrical characteristics of the pentacene-based OTFTs were enhanced after the surface modification. The optimal condition for the dielectric layer was 10 wt% hybrid film with the COC-modified layer; moreover, the device exhibited a threshold voltage of 0.12 V, field-effect mobility of 4.32 × 10-1 cm2 V-1 s-1, and on/off current of 8.4 × 107.

Optimization of shape control of a cantilever beam using dielectric elastomer actuators

NASA Astrophysics Data System (ADS)

Liu, Chong; Mao, Boyong; Huang, Gangting; Wu, Qichen; Xie, Shilin; Xu, Minglong

2018-05-01

Dielectric elastomer (DE) is a kind of smart soft material that has many advantages such as large deformation, fast response, lightweight and easy synthesis. These features make dielectric elastomer a suitable material for actuators. This article focuses on the shape control of a cantilever beam by using dielectric elastomer actuators. The shape control equation in finite element formulation of the cantilever beam partially covered with dielectric elastomer actuators is derived based on the constitutive equation of dielectric elastomer material by using Hamilton principle. The actuating forces produced by dielectric elastomer actuators depend on the number of layers, the position and the actuation voltage of dielectric elastomer actuators. First, effects of these factors on the shape control accuracy when one pair or multiple pairs of actuators are employed are simulated, respectively. The simulation results demonstrate that increasing the number of actuators or the number of layers can improve the control effect and reduce the actuation voltages effectively. Second, to achieve the optimal shape control effect, the position of the actuators and the drive voltages are all determined using a genetic algorithm. The robustness of the genetic algorithm is analyzed. Moreover, the implications of using one pair and multiple pairs of actuators to drive the cantilever beam to the expected shape are investigated. The results demonstrate that a small number of actuators with optimal placement and optimal voltage values can achieve the shape control of the beam effectively. Finally, a preliminary experimental verification of the control effect is carried out, which shows the correctness of the theoretical method.

High-performance colossal permittivity materials of (Nb + Er) co-doped TiO2 for large capacitors and high-energy-density storage devices.

PubMed

Tse, Mei-Yan; Wei, Xianhua; Hao, Jianhua

2016-09-21

The search for colossal permittivity (CP) materials is imperative because of their potential for promising applications in the areas of device miniaturization and energy storage. High-performance CP materials require high dielectric permittivity, low dielectric loss and relatively weak dependence of frequency- and temperature. In this work, we first investigate the CP behavior of rutile TiO2 ceramics co-doped with niobium and erbium, i.e., (Er0.5Nb0.5)xTi1-xO2. Excellent dielectric properties were observed in the materials, including a CP of up to 10(4)-10(5) and a low dielectric loss (tan δ) down to 0.03, which are lower than that of the previously reported co-doped TiO2 CP materials when measured at 1 kHz. Stabilities of frequency and temperature were also accomplished via doping Er and Nb. Valence states of the elements in the material were analyzed using X-ray photoelectron spectroscopy. The Er induced secondary phases were observed using elemental mapping and energy-dispersive spectrometry. Consequently, this work may provide comprehensive guidance to develop high-performance CP materials for fully solid-state capacitor and energy storage applications.

Bismuth pyrochlore-based thin films for dielectric energy storage

NASA Astrophysics Data System (ADS)

Michael, Elizabeth K.

The drive towards the miniaturization of electronic devices has created a need for dielectric materials with large energy storage densities. These materials, which are used in capacitors, are a critical component in many electrical systems. Here, the development of dielectric energy storage materials for pulsed power applications, which require materials with the ability to accumulate a large amount of energy and then deliver it to the system rapidly, is explored. The amount of electrostatic energy that can be stored by a material is a function of the induced polarization and the dielectric breakdown strength of the material. An ideal energy storage dielectric would possess a high relative permittivity, high dielectric breakdown strength, and low loss tangent under high applied electric fields. The bismuth pyrochlores are a compositionally tunable family of materials that meet these requirements. Thin films of cubic pyrochlore bismuth zinc niobate, bismuth zinc tantalate, and bismuth zinc niobate tantalate, were fabricated using a novel solution chemistry based upon the Pechini method. This solution preparation is advantageous because it avoids the use of teratogenic solvents, such as 2-methoxyethanol. Crystalline films fabricated using this solution chemistry had very small grains that were approximately 27 nm in lateral size and 35 nm through the film thickness. Impedance measurements found that the resistivity of the grain boundaries was two orders of magnitude higher than the resistivity of the grain interior. The presence of many resistive grain boundaries impeded conduction through the films, resulting in high breakdown strengths for these materials. In addition to high breakdown strengths, this family of materials exhibited moderate relative permittivities of between 55 +/- 2 and 145 +/- 5, for bismuth zinc tantalate and bismuth zinc niobate, respectively, and low loss tangents on the order of 0.0008 +/- 0.0001. Increases in the concentration of the tantalum end member increased the dielectric breakdown strength. This combination of a high breakdown strength and a moderate permittivity led to a high discharged energy storage density for all film compositions. For example, at a measurement frequency of 10 kHz, bismuth zinc niobate exhibited a maximum recoverable energy storage density of 60.8 +/- 2.0 J/cm 3, while bismuth zinc tantalate exhibited a recoverable energy storage density of 60.7 +/- 2.0 J/cm3. Intermediate compositions of bismuth zinc niobate tantalate were explored to maximize the energy storage density of the substitutional solid solution. At an optimized concentration of ten mole percent tantalum, the maximum recoverable 10 kHz energy storage density was ˜66.9 +/- 2.4 J/cm3. These films of bismuth zinc niobate tantalate (Bi1.5Zn0.9Nb1.35Ta0.15O 6.9) sustained a maximum field of 5.5 MV/cm at 10 kHz, and demonstrated a relative permittivity of 122 +/- 4. The films maintained a high energy storage density above 20 J/cm3 though temperatures of 200°C. The second major objective of this work was to integrate complex oxides processed at temperatures below 350°C onto flexible polyimide substrates for potential use in flexible energy storage applications. Nanocomposite films consisting of a nanocrystalline fluorite related to delta-bismuth oxide in an amorphous matrix were prepared by reducing the citric acid concentration of the precursor solution, relative to the crystalline films. These solutions were batched with the composition Bi1.5Zn0.9Nb 1.35Ta0.15O6.9. The nanocomposite had a relative permittivity of 50 +/- 2 and dielectric losses on the order of 0.03 +/- 0.01. For measurement frequencies of 1 kHz and 10 kHz, the nanocomposite demonstrated a breakdown strength of 3.8 MV/cm, and a room-temperature energy storage density of approximately 40.2 +/- 1.7 J/cm3. To determine the suitability of the nanocomposite films for use in flexible applications, free-standing flexible nanocomposite films underwent repetitive compressive and tensile bending around a minimum bend diameter of 7 mm, which corresponded to a strain of 0.10%. After bending the films 30,000 times, the energy storage density of the films was unchanged, indicating that nanocomposite bismuth zinc niobate tantalate films may be suitable for flexible energy storage applications. To demonstrate the broader applicability of the nanocomposite approach to developing energy storage dielectrics at low processing temperatures, films of nanocomposite lead titanate, Pb1.1TiO3.1, were deposited using an inverted mixing order solution preparation, and annealed at a maximum temperature of 400°C. X-ray diffraction indicated the presence of nanocrystalline ordering, and transmission electron microscopy confirmed the nucleation of isolated nanocrystals of lead oxide in an amorphous lead titanate matrix. (Abstract shortened by UMI.).

An Evanescent Microwave Probe for Super-Resolution Nondestructive Imaging of Metals, Semiconductors, Dielectrics, Composites and Biological Specimens

NASA Technical Reports Server (NTRS)

Pathak, P. S.; Tabib-Azar, M.; Ponchak, G.

1998-01-01

Using evanescent microwaves with decay lengths determined by a combination of microwave wavelength (lambda) and waveguide termination geometry, we have imaged and mapped material non-uniformities and defects with a resolving capability of lambda/3800=79 microns at 1 GHz. In our method a microstrip quarter wavelength resonator was used to generate evanescent microwaves. We imaged materials with a wide range of conductivities. Carbon composites, dielectrics (Duroid, polymers), semiconductors (3C-SiC, polysilicon, natural diamond), metals (tungsten alloys, copper, zinc, steel), high-temperature superconductors, and botanical samples were scanned for defects, residual stresses, integrity of brazed junctions, subsurface features, areas of different film thickness and moisture content. The evanescent microwave probe is a versatile tool and it can be used to perform very fast, large scale mapping of a wide range of materials. This method of characterization compares favorably with ultrasound testing, which has a resolution of about 0.1 mm and suffers from high absorption in composite materials and poor transmission across boundaries. Eddy current methods which can have a resolution on the order of 50 microns are restricted to evaluating conducting materials. Evanescent microwave imaging, with careful choice of operating frequency and probe geometry, can have a resolution of up to 1 micron. In this method we can scan hot and moving objects, sample preparation is not required, testing is non-destructive, non-invasive and non-contact, and can be done in air, in liquid or in vacuum.

Engineering Room-temperature Superconductors Via ab-initio Calculations

NASA Astrophysics Data System (ADS)

Gulian, Mamikon; Melkonyan, Gurgen; Gulian, Armen

The BCS, or bosonic model of superconductivity, as Little and Ginzburg have first argued, can bring in superconductivity at room temperatures in the case of high-enough frequency of bosonic mode. It was further elucidated by Kirzhnitset al., that the condition for existence of high-temperature superconductivity is closely related to negative values of the real part of the dielectric function at finite values of the reciprocal lattice vectors. In view of these findings, the task is to calculate the dielectric function for real materials. Then the poles of this function will indicate the existence of bosonic excitations which can serve as a "glue" for Cooper pairing, and if the frequency is high enough, and the dielectric matrix is simultaneously negative, this material is a good candidate for very high-Tc superconductivity. Thus, our approach is to elaborate a methodology of ab-initio calculation of the dielectric function of various materials, and then point out appropriate candidates. We used the powerful codes (TDDF with the DP package in conjunction with ABINIT) for computing dielectric responses at finite values of the wave vectors in the reciprocal lattice space. Though our report is concerned with the particular problem of superconductivity, the application range of the data processing methodology is much wider. The ability to compute the dielectric function of existing and still non-existing (though being predicted!) materials will have many more repercussions not only in fundamental sciences but also in technology and industry.

Improving the thermal stability and electrical parameters of a liquid crystalline material 4-n-(nonyloxy) benzoic acid by using Li ion beam irradiation

NASA Astrophysics Data System (ADS)

Kumar, Satendra; Verma, Rohit; Dwivedi, Aanchal; Dhar, R.; Tripathi, Ambuj

2018-05-01

Li ion beam irradiation studies on a liquid crystalline material 4-n-(nonyloxy) benzoic acid (NOBA) have been carried out. The material has phase sequence of I-N-SmC-Cr. Thermodynamic studies demonstrate that an irradiation fluence of 1×1013 ions-cm-2 results in the increased thermal stability of the smectic C (SmC) phase of the material. Dielectric measurements illustrate that the transverse component of the dielectric permittivity and hence the dielectric anisotropy of the material in the nematic (N) and SmC phases are increased as compared to those of the pure material due to irradiation. UV-Visible spectrum of the irradiated material shows an additional peak along with the peak of the pure material. The observed change in the thermodynamic and electrical parameters is attributed to the conversion of some of the dimers of NOBA to monomers of NOBA due to irradiation.

Preface to ISIF 2009 special issue of Journal of Applied Physics : science and technology of integrated functionalities.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Auciello, O.; Dey, S.; Paz de Araujo, C.

2011-05-01

The science and technology of ferroelectric thin films and their applications have attracted many researchers and experienced tremendous progress in the past 20 years. The recent worldwide increase in commercial applications of ferroelectric devices such as smart cards based on nonvolatile ferroelectric random access memories is a symbol of both the maturity and the acceptance of the technology. The 21st International Symposium on Integrated Ferroelectrics (ISIF 2009), held on September 22 to October 2, 2009 in Colorado Springs, CO, provided a forum for the academic and national laboratories research community and industry to present and share their new findings, achievements,more » and opinions on integrated ferroelectrics and their applications. The International Symposium on Integrated Ferroelectrics hosted the ISIF 2009. This was the first year where the ISIF held the conference in its new format under the name of International Symposium on Integrated Functionalities. The General Chairs of the ISIF in consultation with the Advisory Board and the ISIF community decided to revise the focus of the conference in order to broaden the scope to the science and technology of multifunctional materials and devices. This decision was taken in view that a new paradigm in materials, materials integration, and devices is emerging with a view to the development of a new generation of micro- and nanoscale multifunctional devices. The program included three plenary presentations on diverse topics such as 'The Role of Nonvolatile Memory in Ubiquitous Computing,' 'Ferroelectrics and High Density Memory Technology,' 'Nanoscale Ferroelectrics and Interfaces: Size Effects,' four tutorial lectures on diverse topics, such as 'Magnetic Memory Applications,' 'Ferroelectrics and Ferroelectric Devices,' 'Challenges for High-K Dielectrics on High Mobility Channels,' 'Solar Cell Materials,' one poster session, and eight oral sessions. Thanks to the great efforts made by the ISIF organization committee and the session chairs, the conference successfully achieved its objectives and the work presented reflected very well the most recent advances of integrated ferroelectrics and their applications, as well as advances in other areas related to the new theme of Integrated Functionalities. Many aspects of ferroelectric, piezoelectric, high-K dielectric, magnetic, and phase change materials, including the science and technology of these materials in thin film form, integration with other thin film materials (metals or oxide electrodes), and fabrication of micro- and nanostructures based on these heterostructure layers, and device architecture and physics, were addressed from the experimental point of view. Work on theory and computer simulations of the mentioned materials and devices were discussed also with a view to the promising applications to multifunctional devices. In addition, the ISIF 2009 featured discussions of alternative nonvolatile memory concepts and materials, such as phase change memories, research on multiferroics and magnetoelectric materials, ferroelectric photovoltaics, and new directions on the science of perovskites such as biomolecular/polarizable interfaces, and bio-ferroelectric and other oxide interfaces. Following the standard submission and peer review process of Journal of Applied Physics, the selected papers presented in ISIF 2009 in Colorado Springs are published in this special issue. We believe that the papers in this special issue represent the forefront contributions to ISIF 2009 in the various areas of fundamental and applied science of integrated ferroelectrics and functionalities and their applications. We would like to take this opportunity to thank the following organizations and companies for their support and sponsorship for ISIF 2009, namely: Aixact Systems GMBH, Radiant Technologies, Symetrix Corporation, and Taylor and Francis Publishers. We would also like to thank the conference and session chairs, advisory and organizing committee members for their hard work that resulted in a very successful ISIF 2009, now in its new future-looking modality of Integrated Functionalities.« less

Coaxial-probe contact-force monitoring for dielectric properties measurements

USDA-ARS?s Scientific Manuscript database

A means is described for measuring and monitoring the contact force applied to a material sample with an open-ended coaxial-line probe for purposes of measuring the dielectric properties of semisolid material samples such as fruit, vegetable and animal tissues. The equipment consists of a stainless...

Monitoring Coaxial-Probe Contact Force for Dielectric Properties Measurement

USDA-ARS?s Scientific Manuscript database

A means is described for measuring and monitoring the contact force applied to a material sample with an open-ended coaxial-line probe for purposes of measuring the dielectric properties of semisolid material samples such as fruit, vegetable and animal tissues. The equipment consists of a stainless...

Effects of temperature and material on dielectric properties of pelleted wood-based biomass

USDA-ARS?s Scientific Manuscript database

The production of pelleted biomass represents a significant emerging industry in the United States. Solid biomass can be formed from the waste products of many different products. In this study, the effects of temperature and pellet material type on the dielectric properties were investigated. Tempe...

Dielectric properties of metallic alloy FeCoZr-dielectric ceramic PZT nanostructures prepared by ion sputtering in vacuum conditions

NASA Astrophysics Data System (ADS)

Boiko, O.

2018-05-01

The main objective of the research was investigation of dielectric properties of (FeCoZr)x(PZT)(100-x) granular nanocomposites and determination the influence of isochronous annealing in temperatures of 398 K-573 K on them. The impedance spectroscopy methodology was used. The measurements of electrical parameters, such as: phase shift angle φ, dielectric loss factor tgδ, capacity C and conductivity σ of (FeCoZr)x(PZT)(100-x) nanocomposites have been performed. Frequency dependencies of these parameters were obtained for the ambient temperature range 98 K-373 K for the frequencies ranging from 50 Hz to 105 Hz. It was established, that the conductivity σ of the tested materials before the percolation threshold demonstrates non-linear dependence on frequency. Furthermore, it increases when the ambient temperature is increasing, which indicates a dielectric type of the material. The two types of electrical conduction: capacitive (phase shift angle φ takes negative values) and inductive (φ takes positive values) have been observed. It was concluded that the hopping conductivity dominated in the nanocomposites. Voltage and current resonances phenomena are observed in the materials. The isochronous annealing intensifies the dielectric properties of (FeCoZr)x(PZT)(100-x) nanocomposites.

Nonlinear dielectric effects in liquids: a guided tour

NASA Astrophysics Data System (ADS)

Richert, Ranko

2017-09-01

Dielectric relaxation measurements probe how the polarization of a material responds to the application of an external electric field, providing information on structure and dynamics of the sample. In the limit of small fields and thus linear response, such experiments reveal the properties of the material in the same thermodynamic state it would have in the absence of the external field. At sufficiently high fields, reversible changes in enthalpy and entropy of the system occur even at constant temperature, and these will in turn alter the polarization responses. The resulting nonlinear dielectric effects feature field induced suppressions (saturation) and enhancements (chemical effect) of the amplitudes, as well as time constant shifts towards faster (energy absorption) and slower (entropy reduction) dynamics. This review focuses on the effects of high electric fields that are reversible and observed at constant temperature for single component glass-forming liquids. The experimental challenges involved in nonlinear dielectric experiments, the approaches to separating and identifying the different sources of nonlinear behavior, and the current understanding of how high electric fields affect dielectric materials will be discussed. Covering studies from Debye’s initial approach to the present state-of-the-art, it will be emphasized what insight can be gained from the nonlinear responses that are not available from dielectric relaxation results obtained in the linear regime.

Development of Dielectric Material with Ceramic Matrix Composite (CMC) Produced from Kaolinite and CaCu{sub 3}Ti{sub 4}O{sub 12} (CCTO)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yin, Wong Swee; Hassan, Jumiah; Hashim, Mansor

Ceramic matrix composites (CMC) combine reinforcing ceramic phases, CaCu{sub 3}Ti{sub 4}O{sub 12} (CCTO) with a ceramic matrix, kaolinite to create materials with new and superior properties. 10% and 20% CCTO were prepared by using a conventional solid state reaction method. CMC samples were pre-sintered at 800 deg. C and sintered at 1000 deg. C. The dielectric properties of samples were measured using HP 4192A LF Impedance Analyzer. Microstructures of the samples were observed using an optical microscope. XRD was used to determine the crystalline structure of the samples. The AFM showed the morphology of the samples. The results showed thatmore » the dielectric constant and dielectric loss factor of both samples are frequency dependent. At 10 Hz, the dielectric constant is 10{sup 11} for both samples. The CMC samples were independent with temperature with low dielectric constant in the frequency range of 10{sup 4}-10{sup 6} Hz. Since the CMC samples consist of different amount of kaolinite, so each sample exhibit different defect mechanism. Different reaction may occur for different composition of material. The effects of processing conditions on the microstructure and electrical properties of CMC are also discussed.« less

Characterizing dielectric tensors of anisotropic materials from a single measurement

NASA Astrophysics Data System (ADS)

Smith, Paula Kay

Ellipsometry techniques look at changes in polarization states to measure optical properties of thin film materials. A beam reflected from a substrate measures the real and imaginary parts of the index of the material represented as n and k, respectively. Measuring the substrate at several angles gives additional information that can be used to measure multilayer thin film stacks. However, the outstanding problem in standard ellipsometry is that it uses a limited number of incident polarization states (s and p). This limits the technique to isotropic materials. The technique discussed in this paper extends the standard process to measure anisotropic materials by using a larger set of incident polarization states. By using a polarimeter to generate several incident polarization states and measure the polarization properties of the sample, ellipsometry can be performed on biaxial materials. Use of an optimization algorithm in conjunction with biaxial ellipsometry can more accurately determine the dielectric tensor of individual layers in multilayer structures. Biaxial ellipsometry is a technique that measures the dielectric tensors of a biaxial substrate, single-layer thin film, or multi-layer structure. The dielectric tensor of a biaxial material consists of the real and imaginary parts of the three orthogonal principal indices (n x + ikx, ny +iky and nz + i kz) as well as three Euler angles (alpha, beta and gamma) to describe its orientation. The method utilized in this work measures an angle-of-incidence Mueller matrix from a Mueller matrix imaging polarimeter equipped with a pair of microscope objectives that have low polarization properties. To accurately determine the dielectric tensors for multilayer samples, the angle-of-incidence Mueller matrix images are collected for multiple wavelengths. This is done in either a transmission mode or a reflection mode, each incorporates an appropriate dispersion model. Given approximate a priori knowledge of the dielectric tensor and film thickness, a Jones reflectivity matrix is calculated by solving Maxwell's equations at each surface. Converting the Jones matrix into a Mueller matrix provides a starting point for optimization. An optimization algorithm then finds the best fit dielectric tensor based on the measured angle-of-incidence Mueller matrix image. This process can be applied to polarizing materials, birefringent crystals and the multilayer structures of liquid crystal displays. In particular, the need for such accuracy in liquid crystal displays is growing as their applications in industry evolve.

Vacuum ultra-violet damage and damage mitigation for plasma processing of highly porous organosilicate glass dielectrics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Marneffe, J.-F. de, E-mail: marneffe@imec.be; Lukaszewicz, M.; Porter, S. B.

2015-10-07

Porous organosilicate glass thin films, with k-value 2.0, were exposed to 147 nm vacuum ultra-violet (VUV) photons emitted in a Xenon capacitive coupled plasma discharge. Strong methyl bond depletion was observed, concomitant with a significant increase of the bulk dielectric constant. This indicates that, besides reactive radical diffusion, photons emitted during plasma processing do impede dielectric properties and therefore need to be tackled appropriately during patterning and integration. The detrimental effect of VUV irradiation can be partly suppressed by stuffing the low-k porous matrix with proper sacrificial polymers showing high VUV absorption together with good thermal and VUV stability. In addition,more » the choice of an appropriate hard-mask, showing high VUV absorption, can minimize VUV damage. Particular processing conditions allow to minimize the fluence of photons to the substrate and lead to negligible VUV damage. For patterned structures, in order to reduce VUV damage in the bulk and on feature sidewalls, the combination of both pore stuffing/material densification and absorbing hard-mask is recommended, and/or the use of low VUV-emitting plasma discharge.« less

The simulation and improved design of tunable channel drop filter using hexagonal photonic crystal ring resonator

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chhipa, Mayur Kumar, E-mail: mayurchhipa1@gmail.com

2014-10-15

In this paper, we have proposed a new design of tunable two dimensional (2D) photonic crystal (PhC) channel drop filter (CDF) using ring resonators. The increasing interest in photonic integrated circuits (PIC's) and the increasing use of all-optical fiber networks as backbones for global communication systems have been based in large part on the extremely wide optical transmission bandwidth provided by dielectric materials. Based on the analysis we present novel photonic crystal channel drop filters. Simulations demonstrate that these filters exhibit ideal transfer characteristics. Channel dropping filters (CDF's) that access one channel of a wavelength division multiplexed (WDM) signal whilemore » leaving other channels undisturbed are essential components of PIC's and optical communication systems. In this paper we have investigated such parameters which have an effect on resonant wavelength in this Channel Drop Filter, such as dielectric constant of inner, coupling, adjacent and whole rods of the structure. The dimensions of these structures are taken as 20a×19a and the area of the proposed structure is about 125.6μm{sup 2}; therefore this structure can be used in the future photonic integrated circuits. While using this design the dropping efficiency at the resonance of single ring are 100%. The spectrum of the power transmission is obtained with finite difference time domain (FDTD) method. FDTD method is the most famous method for PhC analysis. In this paper the dielectric rods have a dielectric constant of 10.65, so the refractive index is 3.26 and radius r=0.213a is located in air, where a is a lattice constant. In this we have used five scatter rods for obtaining more coupling efficiency; radius of scatter rods is set to 0.215a. The proposed structure is simulated with OptiFDTD.v.8.0 software, the different dielectric constant of rods equal to ε{sub r}−0.4, ε{sub r} and ε{sub r}+0.4 at wavelength of 1570 nm.« less

Fabrication, polarization, and characterization of PVDF matrix composites for integrated structural load sensing

NASA Astrophysics Data System (ADS)

Haghiashtiani, Ghazaleh; Greminger, Michael A.

2015-04-01

The focus of this work is to evaluate a new carbon fiber reinforced composite structure with integrated sensing capabilities. In this composite structure, the typical matrix material used for carbon fiber reinforced composites is replaced with the thermoplastic polyvinylidene difluoride (PVDF). Since PVDF has piezoelectric properties, it enables the structure to be used for integrated load sensing. In addition, the electrical conductivity property of the carbon fabric is harnessed to form the electrodes of the integrated sensor. In order to prevent the carbon fiber electrodes from shorting to each other, a thin Kevlar fabric layer is placed between the two carbon fiber electrode layers as a dielectric. The optimal polarization parameters were determined using a design of experiments approach. Once polarized, the samples were then used in compression and tensile tests to determine the effective d33 and d31 piezoelectric coefficients. The degree of polarization of the PVDF material was determined by relating the effective d33 coefficient of the composite to the achieved d33 of the PVDF component of the composite using a closed form expression. Using this approach, it was shown that optimal polarization of the composite material results in a PVDF component d33 of 3.2 pC N-1. Moreover, the Young’s modulus of the composite structure has been characterized.

Effects of synthesis techniques on chemical composition, microstructure and dielectric properties of Mg-doped calcium titanate

NASA Astrophysics Data System (ADS)

Jongprateep, Oratai; Sato, Nicha

2018-04-01

Calcium titanate (CaTiO3) has been recognized as a material for fabrication of dielectric components, owing to its moderate dielectric constant and excellent microwave response. Enhancement of dielectric properties of the material can be achieved through doping, compositional and microstructural control. This study, therefore, aimed at investigating effects of powder synthesis techniques on compositions, microstructure, and dielectric properties of Mg-doped CaTiO3. Solution combustion and solid-state reaction were powder synthesis techniques employed in preparation of undoped CaTiO3 and CaTiO3 doped with 5-20 at% Mg. Compositional analysis revealed that powder synthesis techniques did not exhibit a significant effect on formation of secondary phases. When Mg concentration did not exceed 5 at%, the powders prepared by both techniques contained only a single phase. An increase of MgO secondary phase was observed as Mg concentrations increased from 10 to 20 at%. Experimental results, on the contrary, revealed that powder synthesis techniques contributed to significant differences in microstructure. Solution combustion technique produced powders with finer particle sizes, which consequently led to finer grain sizes and density enhancement. High-density specimens with fine microstructure generally exhibit improved dielectric properties. Dielectric measurements revealed that dielectric constants of all samples ranged between 231 and 327 at 1 MHz, and that superior dielectric constants were observed in samples prepared by the solution combustion technique.

Review of the role of dielectric anisotropy in Dyakonov surface-wave propagation

NASA Astrophysics Data System (ADS)

Nelatury, Sudarshan R., II; Polo, John A., Jr.; Lakhtakia, Akhlesh

2008-08-01

Surface waves (SWs) are localized waves that travel along the planar interface between two different mediums when certain dispersion relations are satisfied. If both mediums have purely dielectric constitutive properties, the characteristics of SW propagation are determined by the anisotropy of both mediums. Surface waves are then called Dyakonov SWs (DSWs), after Dyakonov who theoretically established the possibility of SW propagation at the planar interface of an isotropic dielectric and a positive uniaxial dielectric. Since then, DSW propagation guided by interfaces between a variety of dielectrics has been studied. With an isotropic dielectric on one side, the dielectric on the other side of the interface can be not only positive uniaxial but also biaxial. DSW propagation can also occur along an interface between two uniaxial or biaxial dielectrics that are twisted about a common axis with respect to each other but are otherwise identical. Recently, DSW propagation has been studied taking (i) uniaxial dielectrics such as calomel and dioptase crystals; (ii) biaxial dielectrics such as hemimorphite, crocoite, tellurite, witherite, and cerussite; and (iii) electro-optic materials such as potassium niobate. With materials that are significantly anisotropic, the angular regime of directions for DSW propagation turns out to be narrow. In the case of naturally occurring crystals, one has to accept the narrow angular existence domain (AED). However, exploiting the Pockels effect not only facilitates dynamic electrical control of DSW propagation, but also widens the AED for DSW propagation.

A brief survey of radiation effects on polymer dielectrics

NASA Technical Reports Server (NTRS)

Laghari, Javaid R.; Hammoud, Ahmad N.

1990-01-01

Future space power needs are extrapolated to be at least three to four orders of magnitude more than is currently available. This long-term reliable power will be required on missions such as the Space Station, Pathfinder, Space Plane, and high-powered satellites, and for defense. Electrical insulation and dielectrics are the key electrical materials needed to support these power systems, where a single-point system failure could prove catastrophic or even fatal for the whole mission. Therefore, the impact of radiation, an environmental stress, on the properties and performance of insulation and dielectrics must be understood. The influence of radiation on polymer dielectrics, the insulating materials most commonly used for power transmission and storage, is reviewed. The effects of the type of radiation, dose, rate, and total exposure on the key electrical, mechanical, and physical properties of polymer dielectrics are described and explained.

Predictive methods of some optoelectronic properties for blends based on quaternized polysulfones

NASA Astrophysics Data System (ADS)

Dobos, Adina Maria; Filimon, Anca

2017-11-01

Blends based on quaternized polysulfones were investigated in terms of optical and electronic properties. By applying the Bicerano formalism the refractive index and dielectric constant were evaluated. Also, the dielectric constant of these blends was studied as a function of temperature and frequency. As the result of the main chain structure and charged groups, an increase in theoretical values of the refractive index and dielectric constant with increasing of the ionic quaternized units content in the polymer blend occurs. Additionally, decrease in the dielectric constant with the increase of frequency and decrease of temperature was observed. Refractive index and dielectric constant values indicate that the analyzed samples are transparent and can be used in obtaining of materials with applications involving a small polarizability. Thus, the results are important in prediction of the special optoelectronic features of new polymers blends to obtain high-performance materials with applications in electronic and biomedical fields.

Fabrication of PVDF-TrFE based bilayered PbTiO3/PVDF-TrFE films capacitor

NASA Astrophysics Data System (ADS)

Nurbaya, Z.; Wahid, M. H.; Rozana, M. D.; Annuar, I.; Alrokayan, S. A. H.; Khan, H. A.; Rusop, M.

2016-07-01

Development of high performance capacitor is reaching towards new generation where the ferroelectric materials take places as the active dielectric layer. The motivation of this study is to produce high capacitance device with long life cycle. This was configured by preparing bilayered films where lead titanate as an active dielectric layer and stacked with the top dielectric layer, poly(vinyledenefluoride-trifluoroethylene). Both of them are being referred that have one in common which is ferroelectric behavior. Therefore the combination of ceramic and polymer ferroelectric material could perform optimum dielectric characteristic for capacitor applications. The fabrication was done by simple sol-gel spin coating method that being varied at spinning speed property for polymer layers, whereas maintaining the ceramic layer. The characterization of PVDF-TrFE/PbTiO3 was performed according to metal-insulator-metal stacked capacitor measurement which includes structural, dielectric, and ferroelectric measurement.

Intrinsic dielectric properties of magnetodielectric La2CoMnO6

NASA Astrophysics Data System (ADS)

Silva, R. X.; Moreira, R. L.; Almeida, R. M.; Paniago, R.; Paschoal, C. W. A.

2015-06-01

Manganite with a double perovskite structure is an attractive material because of its interesting magnetoelectric and dielectric responses. In particular, colossal dielectric constant (CDC) behavior has been observed in La2CoMnO6 (LCMO) at radio frequencies and at room temperature. In this paper, we used infrared-reflectivity spectroscopy to study a LCMO ceramic obtained through a modified Pechini's method to determine the phonon contribution to the intrinsic dielectric response of the system and to investigate the CDC origin. The analysis of the main polar modes and of the obtained phonon parameters indicate that the CDC effect of LCMO is of pure extrinsic origin. In addition, we estimated the dielectric constant and the quality factor of the material in the microwave region to be ɛ's ˜ 16 and Qu × f ˜ 124 THz, which verifies that LCMO is appropriate for application in microwave devices and circuitry.

River Devices to Recover Energy with Advanced Materials (River DREAM)

DOE Office of Scientific and Technical Information (OSTI.GOV)

McMahon, Daniel P.

2013-07-03

The purpose of this project is to develop a generator called a Galloping Hydroelectric Energy Extraction Device (GHEED). It uses a galloping prism to convert water flow into linear motion. This motion is converted into electricity via a dielectric elastomer generator (DEG). The galloping mechanism and the DEG are combined to create a system to effectively generate electricity. This project has three research objectives: 1. Oscillator development and design a. Characterize galloping behavior, evaluate control surface shape change on oscillator performance and demonstrate shape change with water flow change. 2. Dielectric Energy Generator (DEG) characterization and modeling a. Characterize andmore » model the performance of the DEG based on oscillator design 3. Galloping Hydroelectric Energy Extraction Device (GHEED) system modeling and integration a. Create numerical models for construction of a system performance model and define operating capabilities for this approach Accomplishing these three objectives will result in the creation of a model that can be used to fully define the operating parameters and performance capabilities of a generator based on the GHEED design. This information will be used in the next phase of product development, the creation of an integrated laboratory scale generator to confirm model predictions.« less

Preparation and Electrical Properties of La0.9Sr0.1TiO3+δ

PubMed Central

Li, Wenzhi; Ma, Zhuang; Gao, Lihong; Wang, Fuchi

2015-01-01

La1−xSrxTiO3+δ (LST) has been studied in many fields, especially in the field of microelectronics due to its excellent electrical performance. Our previous theoretical simulated work has suggested that LST has good dielectric properties, but there are rare reports about this, especially experimental reports. In this paper, LST was prepared using a solid-state reaction method. The X-rays diffraction (XRD), scanning electron microscope (SEM), broadband dielectric spectroscopy, impedance spectroscopy and photoconductive measurement were used to characterize the sample. The results show that the values of dielectric parameters (the relative dielectric constant εr and dielectric loss tanδ), dependent on temperature, are stable under 350 °C and the value of the relative dielectric constant and dielectric loss are about 52–88 and 6.5 × 10−3, respectively. Its value of conductivity increases with rise in temperature, which suggests its negative temperature coefficient of the resistance. In addition, the band gap of LST is about 3.39 eV, so it belongs to a kind of wide-band-gap semiconductor materials. All these indicate that LST has anti-interference ability and good dielectric properties. It could have potential applications as an electronic material. PMID:28787995

Effect of vacuum-ultraviolet irradiation on the dielectric constant of low-k organosilicate dielectrics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zheng, H.; Shohet, J. L.; Ryan, E. T.

2014-11-17

Vacuum ultraviolet (VUV) irradiation is generated during plasma processing in semiconductor fabrications, while the effect of VUV irradiation on the dielectric constant (k value) of low-k materials is still an open question. To clarify this problem, VUV photons with a range of energies were exposed on low-k organosilicate dielectrics (SiCOH) samples at room temperature. Photon energies equal to or larger than 6.0 eV were found to decrease the k value of SiCOH films. VUV photons with lower energies do not have this effect. This shows the need for thermal heating in traditional ultraviolet (UV) curing since UV light sources do notmore » have sufficient energy to change the dielectric constant of SiCOH and additional energy is required from thermal heating. In addition, 6.2 eV photon irradiation was found to be the most effective in decreasing the dielectric constant of low-k organosilicate films. Fourier Transform Infra-red Spectroscopy shows that these 6.2 eV VUV exposures removed organic porogens. This contributes to the decrease of the dielectric constant. This information provides the range of VUV photon energies that could decrease the dielectric constant of low-k materials most effectively.« less

Review on Advances of Functional Material for Additive Manufacturing

NASA Astrophysics Data System (ADS)

Zulkifli, Nur Amalina Binti; Akmal Johar, Muhammad; Faizan Marwah, Omar Mohd; Irwan Ibrahim, Mohd Halim

2017-08-01

The attempt of finding and making new materials in improving products that are already in the market are widely done by researchers nowadays. This project is focusing on making new materials for functional material through additive manufacturing application. The idea of this project came from the ability limitation of capacitor in market nowadays in storing higher charges but smaller in size. Powder glass is the new material that could to be used as a dielectric material for capacitor with the help of palm kernel oil as the binder. This paper reviews on applications done through additive manufacturing method and also types of functional materials used in this method previously. Structure of a capacitor, dielectric properties and measurement techniques that are trying to be carried out are also explains in this paper. Last part of this paper brief on the material proposal and reasons those materials are chosen. New dielectric material for capacitor which are able to store more charges but still small in size are expected to be produced as the outcome of this research.

Pulse Power Capability Of High Energy Density Capacitors Based on a New Dielectric Material

NASA Technical Reports Server (NTRS)

Winsor, Paul; Scholz, Tim; Hudis, Martin; Slenes, Kirk M.

1999-01-01

A new dielectric composite consisting of a polymer coated onto a high-density metallized Kraft has been developed for application in high energy density pulse power capacitors. The polymer coating is custom formulated for high dielectric constant and strength with minimum dielectric losses. The composite can be wound and processed using conventional wound film capacitor manufacturing equipment. This new system has the potential to achieve 2 to 3 J/cu cm whole capacitor energy density at voltage levels above 3.0 kV, and can maintain its mechanical properties to temperatures above 150 C. The technical and manufacturing development of the composite material and fabrication into capacitors are summarized in this paper. Energy discharge testing, including capacitance and charge-discharge efficiency at normal and elevated temperatures, as well as DC life testing were performed on capacitors manufactured using this material. TPL (Albuquerque, NM) has developed the material and Aerovox (New Bedford, MA) has used the material to build and test actual capacitors. The results of the testing will focus on pulse power applications specifically those found in electro-magnetic armor and guns, high power microwave sources and defibrillators.

Dielectric Rheo-SANS: An Instrument for the Simultaneous Interrogation of Rheology, Microstructure and Electronic Properties of Complex Fluids

NASA Astrophysics Data System (ADS)

Wagner, Norman; Richards, Jeffrey; Hipp, Julie; Butler, Paul

In situ measurements are an increasingly important tool to inform the complex relationship between nanoscale properties and macroscopic measurements. For conducting colloidal suspensions, we seek intrinsic relationships between the measured electrical and mechanical response of a material both in quiescence and under applied shear. These relationships can be used to inform the development of new materials with enhanced electrical and mechanical performance. In order to study these relationships, we have developed a dielectric rheology instrument that is compatible with small angle neutron scattering (SANS) experiments. This Dielectric RheoSANS instrument consists of a Couette geometry mounted on an ARES G2 strain controlled rheometer enclosed in a modified Forced Convection Oven (FCO). In this talk, we outline the development of the Dielectric RheoSANS instruments and demonstrate its operation using two systems - a suspension of carbon black particles in propylene carbonate and poly(3-hexylthiophene) organogel - where there is interest in how shear influences the microstructure state of the material. By monitoring the conductivity and rheological response of these materials at the same time, we can capture the entire evolution of the material response to an applied deformation. NCNR NIST Cooperative Agreement #70NANB12H239.

Dielectric Properties of Tungsten Copper Barium Ceramic as Promising Colossal-Permittivity Material

NASA Astrophysics Data System (ADS)

Wang, Juanjuan; Chao, Xiaolian; Li, Guangzhao; Feng, Lajun; Zhao, Kang; Ning, Tiantian

2017-08-01

Ba(Cu0.5W0.5)O3 (BCW) ceramic has been fabricated and its dielectric properties investigated for use in energy-storage applications, revealing a very large dielectric constant (˜104) at 1 kHz. Moreover, the colossal-permittivity BCW ceramic exhibited fine microstructure and optimal temperature stability over a wide temperature range from room temperature to 500°C. The internal barrier layer capacitor mechanism was considered to be responsible for its high dielectric properties. Based on activation values, it is concluded that doubly ionized oxygen vacancies make a substantial contribution to the conduction and relaxation behaviors at grain boundaries. This study suggests that this kind of material has potential for use in high-density energy storage applications.

Investigation of dielectric properties of different cake formulations during microwave and infrared-microwave combination baking.

PubMed

Sakiyan, Ozge; Sumnu, Gulum; Sahin, Serpil; Meda, Venkatesh

2007-05-01

Dielectric properties can be used to understand the behavior of food materials during microwave processing. Dielectric properties influence the level of interaction between food and high frequency electromagnetic energy. Dielectric properties are, therefore, important in the design of foods intended for microwave preparation. In this study, it was aimed to determine the variation of dielectric properties of different cake formulations during baking in microwave and infrared-microwave combination oven. In addition, the effects of formulation and temperature on dielectric properties of cake batter were examined. Dielectric constant and loss factor of cake samples were shown to be dependent on formulation, baking time, and temperature. The increase in baking time and temperature decreased dielectric constant and loss factor of all formulations. Fat content was shown to increase dielectric constant and loss factor of cakes.

Graphene-based hybrid structures combined with functional materials of ferroelectrics and semiconductors.

PubMed

Jie, Wenjing; Hao, Jianhua

2014-06-21

Fundamental studies and applications of 2-dimensional (2D) graphene may be deepened and broadened via combining graphene sheets with various functional materials, which have been extended from the traditional insulator of SiO2 to a versatile range of dielectrics, semiconductors and metals, as well as organic compounds. Among them, ferroelectric materials have received much attention due to their unique ferroelectric polarization. As a result, many attractive characteristics can be shown in graphene/ferroelectric hybrid systems. On the other hand, graphene can be integrated with conventional semiconductors and some newly-discovered 2D layered materials to form distinct Schottky junctions, yielding fascinating behaviours and exhibiting the potential for various applications in future functional devices. This review article is an attempt to illustrate the most recent progress in the fabrication, operation principle, characterization, and promising applications of graphene-based hybrid structures combined with various functional materials, ranging from ferroelectrics to semiconductors. We focus on mechanically exfoliated and chemical-vapor-deposited graphene sheets integrated in numerous advanced devices. Some typical hybrid structures have been highlighted, aiming at potential applications in non-volatile memories, transparent flexible electrodes, solar cells, photodetectors, and so on.

Graphene-based hybrid structures combined with functional materials of ferroelectrics and semiconductors

NASA Astrophysics Data System (ADS)

Jie, Wenjing; Hao, Jianhua

2014-05-01

Fundamental studies and applications of 2-dimensional (2D) graphene may be deepened and broadened via combining graphene sheets with various functional materials, which have been extended from the traditional insulator of SiO2 to a versatile range of dielectrics, semiconductors and metals, as well as organic compounds. Among them, ferroelectric materials have received much attention due to their unique ferroelectric polarization. As a result, many attractive characteristics can be shown in graphene/ferroelectric hybrid systems. On the other hand, graphene can be integrated with conventional semiconductors and some newly-discovered 2D layered materials to form distinct Schottky junctions, yielding fascinating behaviours and exhibiting the potential for various applications in future functional devices. This review article is an attempt to illustrate the most recent progress in the fabrication, operation principle, characterization, and promising applications of graphene-based hybrid structures combined with various functional materials, ranging from ferroelectrics to semiconductors. We focus on mechanically exfoliated and chemical-vapor-deposited graphene sheets integrated in numerous advanced devices. Some typical hybrid structures have been highlighted, aiming at potential applications in non-volatile memories, transparent flexible electrodes, solar cells, photodetectors, and so on.

Dirac cones induced by accidental degeneracy in photonic crystals and zero-refractive-index materials.

PubMed

Huang, Xueqin; Lai, Yun; Hang, Zhi Hong; Zheng, Huihuo; Chan, C T

2011-05-29

A zero-refractive-index metamaterial is one in which waves do not experience any spatial phase change, and such a peculiar material has many interesting wave-manipulating properties. These materials can in principle be realized using man-made composites comprising metallic resonators or chiral inclusions, but metallic components have losses that compromise functionality at high frequencies. It would be highly desirable if we could achieve a zero refractive index using dielectrics alone. Here, we show that by employing accidental degeneracy, dielectric photonic crystals can be designed and fabricated that exhibit Dirac cone dispersion at the centre of the Brillouin zone at a finite frequency. In addition to many interesting properties intrinsic to a Dirac cone dispersion, we can use effective medium theory to relate the photonic crystal to a material with effectively zero permittivity and permeability. We then numerically and experimentally demonstrate in the microwave regime that such dielectric photonic crystals with reasonable dielectric constants manipulate waves as if they had near-zero refractive indices at and near the Dirac point frequency.

Enthalpy - Improved Dielectric Insulation for Superconducting Wires.

DTIC Science & Technology

1982-05-01

these materials are also bein, studickd as regenerator matrix materials for Stirling cycle cryocoolers (7), yet, 1’~l incredibly enough, their...1A0.Az 4. TI T LE (iind SThti tfe) 5 TYPE OF REPORT & PERIOD COVERFID Enthalpy - Improved Dielectric Insulation for Final JUN 80 - MAR 82...resistance, and suggestions are made for improving these conductivities. The SC-2 and SC-3 type materials have near-metallic thermal conductivities near

Investigation of High-k Dielectrics and Metal Gate Electrodes for Non-volatile Memory Applications

NASA Astrophysics Data System (ADS)

Jayanti, Srikant

Due to the increasing demand of non-volatile flash memories in the portable electronics, the device structures need to be scaled down drastically. However, the scalability of traditional floating gate structures beyond 20 nm NAND flash technology node is uncertain. In this regard, the use of metal gates and high-k dielectrics as the gate and interpoly dielectrics respectively, seem to be promising substitutes in order to continue the flash scaling beyond 20nm. Furthermore, research of novel memory structures to overcome the scaling challenges need to be explored. Through this work, the use of high-k dielectrics as IPDs in a memory structure has been studied. For this purpose, IPD process optimization and barrier engineering were explored to determine and improve the memory performance. Specifically, the concept of high-k / low-k barrier engineering was studied in corroboration with simulations. In addition, a novel memory structure comprising a continuous metal floating gate was investigated in combination with high-k blocking oxides. Integration of thin metal FGs and high-k dielectrics into a dual floating gate memory structure to result in both volatile and non-volatile modes of operation has been demonstrated, for plausible application in future unified memory architectures. The electrical characterization was performed on simple MIS/MIM and memory capacitors, fabricated through CMOS compatible processes. Various analytical characterization techniques were done to gain more insight into the material behavior of the layers in the device structure. In the first part of this study, interfacial engineering was investigated by exploring La2O3 as SiO2 scavenging layer. Through the silicate formation, the consumption of low-k SiO2 was controlled and resulted in a significant improvement in dielectric leakage. The performance improvement was also gauged through memory capacitors. In the second part of the study, a novel memory structure consisting of continuous metal FG in the form of PVD TaN was investigated along with high-k blocking dielectric. The material properties of TaN metal and high-k / low-k dielectric engineering were systematically studied. And the resulting memory structures exhibit excellent memory characteristics and scalability of the metal FG down to ˜1nm, which is promising in order to reduce the unwanted FG-FG interferences. In the later part of the study, the thermal stability of the combined stack was examined and various approaches to improve the stability and understand the cause of instability were explored. The performance of the high-k IPD metal FG memory structure was observed to degrade with higher annealing conditions and the deteriorated behavior was attributed to the leakage instability of the high-k /TaN capacitor. While the degradation is pronounced in both MIM and MIS capacitors, a higher leakage increment was seen in MIM, which was attributed to the higher degree of dielectric crystallization. In an attempt to improve the thermal stability, the trade-off in using amorphous interlayers to reduce the enhanced dielectric crystallization on metal was highlighted. Also, the effect of oxygen vacancies and grain growth on the dielectric leakage was studied through a multi-deposition-multi-anneal technique. Multi step deposition and annealing in a more electronegative ambient was observed to have a positive impact on the dielectric performance.

Dielectric waveguide gas-filled stark shift modulator

DOEpatents

Hutchinson, Donald P.; Richards, Roger K.

2003-07-22

An optical modulator includes a dielectric waveguide for receiving an optical beam and coupling energy of the optical beam into the waveguide. At least one Stark material is provided in the waveguide. A bias circuit generates a bias signal to produce an electrical field across the Stark material to shift at least one of the Stark absorption frequencies towards the frequency of the optical beam. A circuit for producing a time varying electric field across the Stark material modulates the optical beam. At least a portion of the bias field can be generated by an alternating bias signal, such as a square wave. A method of modulating optical signals includes the steps of providing a dielectric waveguide for receiving an optical beam and coupling energy of the optical beam into the waveguide, the waveguide having at least one Stark material disposed therein, and varying an electric field imposed across the Stark material.

NMR Investigations of Structure and Dynamics in Polymers for Energy Storage Applications

NASA Astrophysics Data System (ADS)

Greenbaum, Steven

Materials innovation is needed to realize major progress in energy storage capacity for lithium batteries and capacitors. Polymers hold considerable promise as ion conducting media in batteries and electrochemical capacitors and as dielectrics in thin film capacitors. Structural studies of materials utilized in lithium battery technology are hampered by the lack of long-range order found in well-defined crystalline phases. Powder x-ray diffraction yields structural parameters that have been averaged over hundreds of lattice sites, and is unable to provide structural information about amorphous phases. Our laboratory uses solid state nuclear magnetic resonance (NMR) methods to investigate structural and chemical aspects of lithium ion cathodes, anodes, electrolytes, interfaces and interphases. NMR is element- (nuclear-) specific and sensitive to small variations in the immediate environment of the ions being probed, for example Li+, and in most cases is a reliably quantitative spectroscopy in that the integrated intensity of a particular spectral component is directly proportional to the number of nuclei in the corresponding material phase. NMR is also a powerful tool for probing ionic and molecular motion in lithium battery electrolytes with a dynamic range spanning some ten orders of magnitude through spin-lattice relaxation and self-diffusion measurements. Broadband relaxometry based on Fast Field Cycling NMR (FFCNMR) methods can span three to four of these orders of magnitude in a single set of measurements. Results of several recent NMR investigations performed on our lab will be presented. We explore the ion transport mechanism in polyether-based and lithium polymer electrolytes and those based on other base polymers, in particular, the extent to which ionic motion is coupled to polymer segmental motion. Polycarbonates are being considered as a possible replacement for polypropylene in high power thin film capacitors due to their favorable dielectric properties. We investigate the effects of incorporation of two types of additives in the polymer film on the ring-flip motions corresponding to the γ relaxation: (i) high dielectric constant ceramic particles; (ii) polar organic diluent molecules, The low frequency realm of broadband relaxometry allows meaningful comparison with dielectric relaxation studies of these samples performed by collaborators. Work Supported in part by the U.S. Office of Naval Research.

Neural electrode resilience against dielectric damage may be improved by use of highly doped silicon as a conductive material.

PubMed

Caldwell, Ryan; Sharma, Rohit; Takmakov, Pavel; Street, Matthew G; Solzbacher, Florian; Tathireddy, Prashant; Rieth, Loren

2018-01-01

Dielectric damage occurring in vivo to neural electrodes, leading to conductive material exposure and impedance reduction over time, limits the functional lifetime and clinical viability of neuroprosthetics. We used silicon micromachined Utah Electrode Arrays (UEAs) with iridium oxide (IrO x ) tip metallization and parylene C dielectric encapsulation to understand the factors affecting device resilience and drive improvements. In vitro impedance measurements and finite element analyses were conducted to evaluate how exposed surface area of silicon and IrO x affect UEA properties. Through an aggressive in vitro reactive accelerated aging (RAA) protocol, in vivo parylene degradation was simulated on UEAs to explore agreement with our models. Electrochemical properties of silicon and other common electrode materials were compared to help inform material choice in future neural electrode designs. Exposure of silicon on UEAs was found to primarily affect impedance at frequencies >1kHz, while characteristics at 1 kHz and below were largely unchanged. Post-RAA impedance reduction of UEAs was mitigated in cases where dielectric damage was more likely to expose silicon instead of IrO x . Silicon was found to have a per-area electrochemical impedance >10×higher than many common electrode materials regardless of doping level and resistivity, making it best suited for use as a low-shunting conductor. Non-semiconductor electrode materials commonly used in neural electrode design are more susceptible to shunting neural interface signals through dielectric defects, compared to highly doped silicon. Strategic use of silicon and similar materials may increase neural electrode robustness against encapsulation failures. Copyright © 2017 Elsevier B.V. All rights reserved.

Integration of Electrodeposited Ni-Fe in MEMS with Low-Temperature Deposition and Etch Processes

PubMed Central

Schiavone, Giuseppe; Murray, Jeremy; Perry, Richard; Mount, Andrew R.; Desmulliez, Marc P. Y.; Walton, Anthony J.

2017-01-01

This article presents a set of low-temperature deposition and etching processes for the integration of electrochemically deposited Ni-Fe alloys in complex magnetic microelectromechanical systems, as Ni-Fe is known to suffer from detrimental stress development when subjected to excessive thermal loads. A selective etch process is reported which enables the copper seed layer used for electrodeposition to be removed while preserving the integrity of Ni-Fe. In addition, a low temperature deposition and surface micromachining process is presented in which silicon dioxide and silicon nitride are used, respectively, as sacrificial material and structural dielectric. The sacrificial layer can be patterned and removed by wet buffered oxide etch or vapour HF etching. The reported methods limit the thermal budget and minimise the stress development in Ni-Fe. This combination of techniques represents an advance towards the reliable integration of Ni-Fe components in complex surface micromachined magnetic MEMS. PMID:28772683

Novel organic semiconductors and dielectric materials for high performance and low-voltage organic thin-film transistors

NASA Astrophysics Data System (ADS)

Yoon, Myung-Han

Two novel classes of organic semiconductors based on perfluoroarene/arene-modified oligothiophenes and perfluoroacyl/acyl-derivatized quaterthiophens are developed. The frontier molecular orbital energies of these compounds are studied by optical spectroscopy and electrochemistry while solid-state/film properties are investigated by thermal analysis, x-ray diffraction, and scanning electron microscopy. Organic thin film transistors (OTFTs) performance parameters are discussed in terms of the interplay between semiconductor molecular energetics and film morphologies/microstructures. For perfluoroarene-thiophene oligomer systems, majority charge carrier type and mobility exhibit a strong correlation with the regiochemistry of perfluoroarene incorporation. In quaterthiophene-based semiconductors, carbonyl-functionalization allows tuning of the majority carrier type from p-type to ambipolar and to n-type. In situ conversion of a p-type semiconducting film to n-type film is also demonstrated. Very thin self-assembled or spin-on organic dielectric films have been integrated into OTFTs to achieve 1 - 2 V operating voltages. These new dielectrics are deposited either by layer-by-layer solution phase deposition of molecular precursors or by spin-coating a mixture of polymer and crosslinker, resulting in smooth and virtually pinhole-free thin films having exceptionally large capacitances (300--700 nF/cm2) and low leakage currents (10 -9 - 10-7 A/cm2). These organic dielectrics are compatible with various vapor- or solution-deposited p- and n-channel organic semiconductors. Furthermore, it is demonstrated that spin-on crosslinked-polymer-blend dielectrics can be employed for large-area/patterned electronics, and complementary inverters. A general approach for probing semiconductor-dielectric interface effects on OTFT performance parameters using bilayer gate dielectrics is presented. Organic semiconductors having p-, n-type, or ambipolar majority charge carriers are grown on six different bilayer dielectrics consisting of various spin-coated polymers/HMDS on 300 nm SiO2/p+-Si, followed by transistor fabrication. In case of air-sensitive n-type semiconductors, dielectric surface modifications induce large variations in the corresponding OTFT performance parameters while film morphologies and microstructures remain unchanged. In contrast, the device performance of air-stable n-type and p-type semiconductors is not significantly affected by dielectric surface modifications. The origin of the mobility sensitivity to the various surface chemistries in the case of air sensitive n-type semiconductors is found to be due to electron trapping by silanol and carbonyl functionalities at the semiconductor-dielectric interface.

Improved integration of ultra-thin high-k dielectrics in few-layer MoS2 FET by remote forming gas plasma pretreatment

NASA Astrophysics Data System (ADS)

Wang, Xiao; Zhang, Tian-Bao; Yang, Wen; Zhu, Hao; Chen, Lin; Sun, Qing-Qing; Zhang, David Wei

2017-01-01

The effective and high-quality integration of high-k dielectrics on two-dimensional (2D) crystals is essential to the device structure engineering and performance improvement of field-effect transistor (FET) based on the 2D semiconductors. We report a 2D MoS2 transistor with ultra-thin Al2O3 top-gate dielectric (6.1 nm) and extremely low leakage current. Remote forming gas plasma pretreatment was carried out prior to the atomic layer deposition, providing nucleation sites with the physically adsorbed ions on the MoS2 surface. The top gate MoS2 FET exhibited excellent electrical performance, including high on/off current ratio over 109, subthreshold swing of 85 mV/decade and field-effect mobility of 45.03 cm2/V s. Top gate leakage current less than 0.08 pA/μm2 at 4 MV/cm has been obtained, which is the smallest compared with the reported top-gated MoS2 transistors. Such an optimized integration of high-k dielectric in 2D semiconductor FET with enhanced performance is very attractive, and it paves the way towards the realization of more advanced 2D nanoelectronic devices and integrated circuits.

High internal free volume compositions for low-k dielectric and other applications

NASA Technical Reports Server (NTRS)

Bouffard, Jean (Inventor); Swager, Timothy M. (Inventor)

2010-01-01

The present invention provides materials, devices, and methods involving new heterocyclic, shape-persistent monomeric units with internal free volume. In some cases, materials the present invention may comprise monomers, oligomers, or polymers that incorporate a heterocyclic, shape-persistent iptycene. The present invention may provide materials having low dielectric constants and improved stability at high operating temperatures due to the electron-poor character of materials. In addition, compositions of the invention may be easily synthesized and readily modified to suit a particular application.

Solar cell contact formation using laser ablation

DOEpatents

Harley, Gabriel; Smith, David D.; Cousins, Peter John

2015-07-21

The formation of solar cell contacts using a laser is described. A method of fabricating a back-contact solar cell includes forming a poly-crystalline material layer above a single-crystalline substrate. The method also includes forming a dielectric material stack above the poly-crystalline material layer. The method also includes forming, by laser ablation, a plurality of contacts holes in the dielectric material stack, each of the contact holes exposing a portion of the poly-crystalline material layer; and forming conductive contacts in the plurality of contact holes.

Solar cell contact formation using laser ablation

DOEpatents

Harley, Gabriel; Smith, David; Cousins, Peter

2012-12-04

The formation of solar cell contacts using a laser is described. A method of fabricating a back-contact solar cell includes forming a poly-crystalline material layer above a single-crystalline substrate. The method also includes forming a dielectric material stack above the poly-crystalline material layer. The method also includes forming, by laser ablation, a plurality of contacts holes in the dielectric material stack, each of the contact holes exposing a portion of the poly-crystalline material layer; and forming conductive contacts in the plurality of contact holes.

Effects of Cryogenic Temperatures on Spacecraft Internal Dielectric Discharges

NASA Technical Reports Server (NTRS)

Ferguson, Dale c.; Schneider, Todd A.; Vaughn, Jason A.

2009-01-01

Abstract Most calculations of internal dielectric charging on spacecraft use tabulated values of material surface and bulk conductivities, dielectric constants, and dielectric breakdown strengths. Many of these properties are functions of temperature, and the temperature dependences are not well known. At cryogenic temperatures, where it is well known that material conductivities decrease dramatically, it is an open question as to the timescales over which buried charge will dissipate and prevent the eventual potentially disastrous discharges of dielectrics. In this paper, measurements of dielectric charging and discharging for cable insulation materials at cryogenic temperatures (approx. 90 K) are presented using a broad spectrum electron source at the NASA Marshall Space Flight Center. The measurements were performed for the James Webb Space Telescope (JWST), which will orbit at the Earth-Sun L2 point, and parts of which will be perennially at temperatures as low as 40 K. Results of these measurements seem to show that Radiation Induced Conductivity (RIC) under cryogenic conditions at L2 will not be sufficient to allow charges to bleed off of some typical cable insulation materials even over the projected JWST lifetime of a dozen years or more. After the charging and discharging measurements are presented, comparisons are made between the material conductivities that can be inferred from the measured discharges and conductivities calculated from widely used formulae. Furthermore, the measurement-inferred conductivities are compared with extrapolations of recent measurements of materials RIC and dark conductivities performed with the charge-storage method at Utah State University. Implications of the present measurements are also given for other spacecraft that may operate at cryogenic temperatures, such as probes of the outer planets or the permanently dark cratered areas on the moon. The present results will also be of interest to those who must design or operate spacecraft in more moderate cold conditions. Finally, techniques involving shielding and/or selective use of somewhat conductive insulators are presented to prevent arc-inducing charge buildup even under cryogenic conditions.

Dielectric Properties of Iron- and Sodium-Fumarate

NASA Astrophysics Data System (ADS)

Skuban, Sonja J.; Džomić, Tanja; Kapor, Agneš

2007-04-01

The behaviour of dielectric parameters such as relative dielectric constant (ɛ'), relative loss factor (V'') and ac conductivity of well known pharmaceutical materials Fe(II)-fumarate and sodium-fumarate have been studied as a function of temperature (range 303 K to 483 K) and frequency (range 0.1 Hz to 100 kHz).

Process for manufacturing multilayer capacitors

DOEpatents

Lauf, Robert J.; Holcombe, Cressie E.; Dykes, Norman L.

1996-01-01

The invention is directed to a method of manufacture of multilayer electrical components, especially capacitors, and components made by such a method. High capacitance dielectric materials and low cost metallizations layered with such dielectrics may be fabricated as multilayer electrical components by sintering the metallizations and the dielectrics during the fabrication process by application of microwave radiation.

Dielectric characterization of high-performance spaceflight materials

NASA Astrophysics Data System (ADS)

Kleppe, Nathan; Nurge, Mark A.; Bowler, Nicola

2015-03-01

As commercial space travel increases, the need for reliable structural health monitoring to predict possible weaknesses or failures of structural materials also increases. Monitoring of these materials can be done through the use of dielectric spectroscopy by comparing permittivity or conductivity measurements performed on a sample in use to that of a pristine sample from 100 μHz to 3 GHz. Fluctuations in these measured values or of the relaxation frequencies, if present, can indicate chemical or physical changes occurring within the material and the possible need for maintenance/replacement. In this work, we establish indicative trends that occur due to changes in dielectric spectra during accelerated aging of various high-performance polymeric materials: ethylene vinyl alcohol (EVOH), Poly (ether ether ketone) (PEEK), polyphenylene sulfide (PPS), and ultra-high molecular weight polyethylene (UHMWPE). Uses for these materials range from electrical insulation and protective coatings to windows and air- or space-craft parts that may be subject to environmental damage over long-term operation. Samples were prepared by thermal exposure and, separately, by ultraviolet/water-spray cyclic aging. The aged samples showed statistically-significant trends of either increasing or decreasing real or imaginary permittivity values, relaxation frequencies, conduction or the appearance of new relaxation modes. These results suggest that dielectric testing offers the possibility of nondestructive evaluation of the extent of age-related degradation in these materials.

Crosslinked polyarylene ether nitrile film as flexible dielectric materials with ultrahigh thermal stability

PubMed Central

Yang, Ruiqi; Wei, Renbo; Li, Kui; Tong, Lifen; Jia, Kun; Liu, Xiaobo

2016-01-01

Dielectric film with ultrahigh thermal stability based on crosslinked polyarylene ether nitrile is prepared and characterized. The film is obtained by solution-casting of polyarylene ether nitrile terminated phthalonitrile (PEN-Ph) combined with post self-crosslinking at high temperature. The film shows a 5% decomposition temperature over 520 °C and a glass transition temperature (Tg) around 386 °C. Stable dielectric constant and low dielectric loss are observed for this film in the frequency range of 100–200 kHz and in the temperature range of 25–300 °C. The temperature coefficient of dielectric constant is less than 0.001 °C−1 even at 400 °C. By cycling heating and cooling up to ten times or heating at 300 °C for 12 h, the film shows good reversibility and robustness of the dielectric properties. This crosslinked PEN film will be a potential candidate as high performance film capacitor electronic devices materials used at high temperature. PMID:27827436

High temperature dielectric studies of indium-substituted NiCuZn nanoferrites

NASA Astrophysics Data System (ADS)

Hashim, Mohd.; Raghasudha, M.; Shah, Jyoti; Shirsath, Sagar E.; Ravinder, D.; Kumar, Shalendra; Meena, Sher Singh; Bhatt, Pramod; Alimuddin; Kumar, Ravi; Kotnala, R. K.

2018-01-01

In this study, indium (In3+)-substituted NiCuZn nanostructured ceramic ferrites with a chemical composition of Ni0.5Cu0.25Zn0.25Fe2-xInxO4 (0.0 ≤ x ≤ 0.5) were prepared by chemical synthesis involving sol-gel chemistry. Single phased cubic spinel structure materials were prepared successfully according to X-ray diffraction and transmission electron microscopy analyses. The dielectric properties of the prepared ferrites were measured using an LCR HiTester at temperatures ranging from room temperature to 300 °C at different frequencies from 102 Hz to 5 × 106 Hz. The variations in the dielectric parameters ε‧ and (tanδ) with temperature demonstrated the frequency- and temperature-dependent characteristics due to electron hopping between the ions. The materials had low dielectric loss values in the high frequency range at all temperatures, which makes them suitable for high frequency microwave applications. A qualitative explanation is provided for the dependences of the dielectric constant and dielectric loss tangent on the frequency, temperature, and composition. Mӧssbauer spectroscopy was employed at room temperature to characterize the magnetic behavior.

Improvement of MRR and surface roughness during electrical discharge machining (EDM) using aluminum oxide powder mixed dielectric fluid

NASA Astrophysics Data System (ADS)

Khan, A. A.; Mohiuddin, A. K. M.; Latif, M. A. A.

2018-01-01

This paper discusses the effect of aluminium oxide (Al203) addition to dielectric fluid during electrical discharge machining (EDM). Aluminium oxide was added to the dielectric used in the EDM process to improve its performance when machining the stainless steel AISI 304, while copper was used as the electrode. Effect of the concentration of Al203 (0.3 mg/L) in dielectric fluid was compared with EDM without any addition of Al203. Surface quality of stainless steel and the material removal rate were investigated. Design of the experiment (DOE) was used for the experimental plan. Statistical analysis was done using ANOVA and then appropriate model was designated. The experimental results show that with dispersing of aluminium oxide in dielectric fluid surface roughness was improved while the material removal rate (MRR) was increased to some extent. These indicate the improvement of EDM performance using aluminium oxide in dielectric fluid. It was also found that with increase in pulse on time both MRR and surface roughness increase sharply.

Nonlinear dielectric thin films for high-power electric storage with energy density comparable with electrochemical supercapacitors.

PubMed

Yao, Kui; Chen, Shuting; Rahimabady, Mojtaba; Mirshekarloo, Meysam Sharifzadeh; Yu, Shuhui; Tay, Francis Eng Hock; Sritharan, Thirumany; Lu, Li

2011-09-01

Although batteries possess high energy storage density, their output power is limited by the slow movement of charge carriers, and thus capacitors are often required to deliver high power output. Dielectric capacitors have high power density with fast discharge rate, but their energy density is typically much lower than electrochemical supercapacitors. Increasing the energy density of dielectric materials is highly desired to extend their applications in many emerging power system applications. In this paper, we review the mechanisms and major characteristics of electric energy storage with electrochemical supercapacitors and dielectric capacitors. Three types of in-house-produced ferroic nonlinear dielectric thin film materials with high energy density are described, including (Pb(0.97)La(0.02))(Zr(0.90)Sn(0.05)Ti(0.05))O(3) (PLZST) antiferroelectric ceramic thin films, Pb(Zn(1/3)Nb(2/3))O(3-)Pb(Mg(1/3)Nb(2/3))O(3-)PbTiO(3) (PZN-PMN-PT) relaxor ferroelectric ceramic thin films, and poly(vinylidene fluoride) (PVDF)-based polymer blend thin films. The results showed that these thin film materials are promising for electric storage with outstandingly high power density and fairly high energy density, comparable with electrochemical supercapacitors.

Dielectric and magnetic studies of BaTi0.5Fe0.5O3 ceramic materials, synthesized by solid state sintering.

PubMed

Samuvel, K; Ramachandran, K

2015-02-05

A comparative study of the surface morphology, dielectric and magnetic properties of the BaTi0.5Fe0.5O3 (BTFO) ceramics materials. This has been carried out by synthesizing the samples in different routes. BTFO samples have shown single phased 12R type hexagonal structure with R3m, P4mm space group. Interfacial effects on the dielectric properties of the samples have been understood by Cole-Cole plots in complex impedance and modulus formalism. It has been identified that huge dielectric constant (10(3)-10(6)) at lower frequencies is largely contributed by the heterogeneous electronic microstructure at the interfaces of grains. Modulus formalism has identified the effects of both grain and grain boundary microstructure on the dielectric properties, particularly in chemical routed samples. The order of grain boundary resistivity suggests the semiconductor/insulator class of the material. The grain boundary resistivity of the mechanical alloyed samples is remarkably lower than the solid state and chemical routed samples. Few samples have of the samples have exhibited signature of ferromagnetism at the room temperature. Copyright © 2014 Elsevier B.V. All rights reserved.

Enhanced dielectric response of GeO{sub 2}-doped CaCu{sub 3}Ti{sub 4}O{sub 12} ceramics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Amaral, F.; School of Technology and Management of Oliveira do Hospital, Oliveira do Hospital, 3400-124 Oliveira; Rubinger, C. P. L.

2009-02-01

CaCu{sub 3}Ti{sub 4}O{sub 12} ceramic samples were prepared by solid state conventional route using stoichiometric amounts of CuO, TiO{sub 2}, and CaCO{sub 3}. Afterward the material was doped with GeO{sub 2} with concentrations up to 6% by weight and sintered at 1050 deg. C for 12 h. The influence of doping on the microstructure, vibrational modes, and dielectric properties of the material was investigated by x-ray diffraction, scanning electron microscopy coupled with an energy dispersive spectrometer, and infrared and dielectric measurements between 100 Hz and 30 MHz. The materials presented huge dielectric response, which increases with doping level relative tomore » undoped CaCu{sub 3}Ti{sub 4}O{sub 12}. The main effect of doping on the microstructure is the segregation of Cu-rich phase in the ceramic grain boundaries. Cole-Cole modeling correlates well the effects of this segregation with the relaxation parameters obtained. The intrinsic phonon contributions for the dielectric response were obtained and discussed together with the structural evolution of the system.« less

Dielectric properties of polyhedral oligomeric silsesquioxane (POSS)-based nanocomposites at 77k

NASA Astrophysics Data System (ADS)

Pan, Ming-Jen; Gorzkowski, Edward; McAllister, Kelly

2011-10-01

The goal of this study is to develop dielectric nanocomposites for high energy density applications at liquid nitrogen temperature by utilizing a unique nano-material polyhedral oligomeric silsesquioxanes (POSS). A POSS molecule is consisted of a silica cage core with 8 silicon and 12 oxygen atoms and organic functional groups attached to the corners of the cage. In this study, we utilize POSS for the fabrication of nanocomposites both as a silica nanoparticle filler to enhance the breakdown strength and as a surfactant for effective dispersion of high permittivity ceramic nanoparticles in a polymer matrix. The matrix materials selected for the study are polyvinylidene fluoride (PVDF) and poly(methyl methacrylate) (PMMA). The ceramic nanoparticles are barium strontium titanate (BST 50/50) and strontium titanate. The dielectric properties of the solution-cast nanocomposites films were correlated to the composition and processing conditions. We determined that the addition of POSS did not provide enhanced dielectric performance in PVDF- and PMMA-based materials at either room temperature or 77K. In addition, we found that the dielectric breakdown strength of PMMA is lower at 77K than at room temperature, contradicting literature data.

Analysis of transmittance properties in 1D hybrid dielectric photonic crystal containing superconducting thin films

NASA Astrophysics Data System (ADS)

Soltani, Osswa; Zaghdoudi, Jihene; Kanzari, Mounir

2018-06-01

By means of two fluid model and transfer matrix method (TMM), we investigate theoretically the transmittance properties of a defective hybrid dielectric-dielectric photonic crystal that contains a superconducting material as a defect layer. The considered hybrid photonic structure is: H(LH) 7(HLSLH) P H(LH) 7 , where H is the high refractive index dielectric, L is the low refractive index dielectric, S is the superconducting material and P is the repetitive number. The results show that the variation of the number and the positions of the transmissions modes depend strongly on the repetitive number P, the temperature T and the thickness of the layer S. An improvement of the spectral response is obtained with the exponential gradation of layer thicknesses dj =d0 + βejα , where d0 is the initial thickness of the layer j, α and β are two particular constants for each material. In addition, the effect of the incident angle for both transverse electric (TE) and transverse magnetic (TM) polarizations on the transmittance spectrum is discussed. As a result, we propose a tunable narrow stop-band polychromatic filter that covers the visible wavelength.

Impact of device engineering on analog/RF performances of tunnel field effect transistors

NASA Astrophysics Data System (ADS)

Vijayvargiya, V.; Reniwal, B. S.; Singh, P.; Vishvakarma, S. K.

2017-06-01

The tunnel field effect transistor (TFET) and its analog/RF performance is being aggressively studied at device architecture level for low power SoC design. Therefore, in this paper we have investigated the influence of the gate-drain underlap (UL) and different dielectric materials for the spacer and gate oxide on DG-TFET (double gate TFET) and its analog/RF performance for low power applications. Here, it is found that the drive current behavior in DG-TFET with a UL feature while implementing dielectric material for the spacer is different in comparison to that of DG-FET. Further, hetero gate dielectric-based DG-TFET (HGDG-TFET) is more resistive against drain-induced barrier lowering (DIBL) as compared to DG-TFET with high-k (HK) gate dielectric. Along with that, as compared to DG-FET, this paper also analyses the attributes of UL and dielectric material on analog/RF performance of DG-TFET in terms of transconductance (gm ), transconductance generation factor (TGF), capacitance, intrinsic resistance (Rdcr), cut-off frequency (F T), and maximum oscillation frequency (F max). The LK spacer-based HGDG-TFET with a gate-drain UL has the potential to improve the RF performance of device.

Multifunctional graded dielectrics fabricated using dry powder printing

NASA Astrophysics Data System (ADS)

Good, Austin J.; Roper, David; Good, Brandon; Yarlagadda, Shridhar; Mirotznik, Mark S.

2017-09-01

The ability to fabricate multifunctional devices that combine good structural properties with embedded electromagnetic functionality has many practical applications, including antireflective surfaces for structural radomes, load bearing conformal antennas, integrated RF transmission lines and passive beam forming networks. We describe here a custom made 3D printer that can print high dielectric constant ceramic powders within a low-loss structural composite substrate to produce mechanically robust parts with integrated graded dielectric properties. We fabricated a number of these parts and evaluated their anisotropic dielectric properties by determining the complete permittivity tensor of the printed samples as a function of local powder weight. This data was then experimentally validated using two practical examples: a Chebyshev antireflective stack and a 2D passive beamsteering network. The results of both electromagnetic systems displayed acceptable agreement between the simulated and measured results. This agreement shows that powder printing is a potential approach for fabricating spatially graded dielectric electromagnetic systems. This paper was submitted for review on 15 February 2017. The project is funded by the Office of Naval Research, Code 331.

Three-phase Fe3O4/MWNT/PVDF nanocomposites with high dielectric constant for embedded capacitor

NASA Astrophysics Data System (ADS)

Wang, Haiyun; Fu, Qiong; Luo, Jiangqi; Zhao, Dongmei; Luo, Laihui; Li, Weiping

2017-06-01

To get the dielectric material with a high dielectric constant and low dielectric loss, the modified multiwalled carbon nanotube (MWNT-S) and ferroferric oxide (Fe3O4) particles were embedded into polyvinylidene fluoride (PVDF) to fabricate the Fe3O4/MWNT-S/PVDF ternary composites. The maximum dielectric constant of these composites can be up to 3490 at a very low filler fraction, and dielectric loss can be suppressed below 0.5. The small amount of the second filler (Fe3O4) can accelerate the formation of a percolation conductive network and improve the interfacial polarization. Therefore, the excellent dielectric properties can be achieved at low loading of fillers.

The study of electrical conduction mechanisms. [dielectric response of lunar fines

NASA Technical Reports Server (NTRS)

Morrison, H. F.

1974-01-01

The dielectric response of lunar fines 74241,2 is presented in the audio-frequency range and under lunarlike conditions. Results suggest that volatiles are released during storage and transport of the lunar sample. Apparently, subsequent absorption of volatiles on the sample surface alter its dielectric response. The assumed volatile influence disappear after evacuation. A comparison of the dielectric properties of lunar and terrestrial materials as a function of density, temperature, and frequency indicates that if the lunar simulator analyzed were completely devoid of atmospheric moisture it would present dielectric losses smaller than those of the lunar sample. It is concluded that density prevails over temperature as the controlling factor of dielectric permittivity in the lunar regolith and that dielectric losses vary slowly with depth.

Self assembled monolayers of octadecyltrichlorosilane for dielectric materials

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kumar, Vijay, E-mail: cirivijaypilani@gmail.com; Mechanical Engineering Department, Birla Institute of Technology and Science-Pilani; Puri, Paridhi

2016-04-13

Treatment of surfaces to change the interaction of fluids with them is a critical step in constructing useful microfluidics devices, especially those used in biological applications. Selective modification of inorganic materials such as Si, SiO{sub 2} and Si{sub 3}N{sub 4} is of great interest in research and technology. We evaluated the chemical formation of OTS self-assembled monolayers on silicon substrates with different dielectric materials. Our investigations were focused on surface modification of formerly used common dielectric materials SiO{sub 2}, Si{sub 3}N{sub 4} and a-poly. The improvement of wetting behaviour and quality of monolayer films were characterized using Atomic force microscope,more » Scanning electron microscope, Contact angle goniometer, Raman spectroscopy and X-ray photoelectron spectroscopy (XPS) monolayer deposited oxide surface.« less

PREFACE: Dielectrics 2009: Measurement Analysis and Applications

NASA Astrophysics Data System (ADS)

Vaughan, Alun; Williams, Graham

2009-07-01

The conference Dielectrics 2009: Measurements, Analysis and Applications represents a significant milestone in the evolution of dielectrics research in the UK. It is reasonable to state that the academic study of dielectrics has led to many fundamental advances and that dielectric materials underpin the modern world in devices ranging from field effect transistors, which operate at extremely high fields, albeit low voltages, to the high voltage plants that provide the energy that powers our economy. The origins of the Dielectrics Group of the Institute of Physics (IOP), which organized this conference, can be traced directly back to the early 1960s, when Professor Mansel Davies was conducting research into the dielectric relaxation behaviour of polar liquids and solids at The Edward Davies Chemical Laboratories of the University College of Wales, Aberystwyth. He was already well-known internationally for his studies of molecular structure and bonding of small molecules, using infra-red-spectroscopy, and of the physical properties of hydrogen-bonded liquids and solids, using thermodynamic methods. Dielectric spectroscopy was a fairly new area for him and he realized that opportunities for scientists in the UK to gather together and discuss their research in this developing area of physical chemistry/chemical physics were very limited. He conceived the idea of forming a Dielectrics Discussion Group (DDG), which would act as a meeting point and provide a platform for dielectrics research in the UK and beyond and, as a result, a two-day Meeting was convened in the spring of 1968 at Gregynog Hall of the University of Wales, near Newtown, Montgomeryshire. It was organized by Mansel Davies, Alun Price and Graham Williams, all physical chemists from the UCW, Aberystwyth. Fifty scientists attended, being a mix of physical chemists, theoretical chemists, physicists, electrical engineers, polymer and materials scientists, all from the UK, except Dr Brendan Scaife of Trinity College, Dublin. The Meeting discussed dielectric relaxation behaviour arising from molecular motions of dipolar molecules in the liquid and elastomeric states (now known as soft condensed matter) with measurements spanning a frequency range from a few Hz, through power and radiofrequencies, UHF and VHF, the microwave range and into the far infra-red. As a result of its success, it was decided at the Meeting that a continuing Dielectrics Discussion Group would be established to meet not more frequently than once a year. It was appreciated at the time that the subject of 'Dielectrics' covered many sub-areas, broadly classified into those of polarization, relaxation, conduction and high-field phenomena. For the DDG, a solution was to run annual meetings on chosen themes in dielectrics research, where the theme would change from one meeting to the next. Topics addressed in the early years of the DDG included high field phenomena and impurity effects, heterogeneous systems and biomaterials, polarization and conduction and non-linear dielectrics and ferroelectrics. The number of participants at these early meetings grew from 50 to the low 100's, which reflected both the increased awareness of the Group and increased participation from researchers in Continental Europe. However, the majority of participants in this period were from the UK, which reflected the considerable activities in dielectrics research in University, Industry and Government laboratories in the UK. There followed a series of DDG Meetings until 1974, at which point, the DDG became a registered charity: The Dielectrics Society. Many of the earlier meetings were held in the attractive and convenient venues of Oxford and Cambridge colleges but, in the early 1990's, a new venue for the meetings was established at the University of Kent at Canterbury. In 2001, the next major change occurred when The Dielectrics Society was incorporated into the Institute of Physics, becoming their Dielectrics Group. From 1968 to 2001 the Annual Meetings focused on numerous topics, including relaxation and conduction processes in liquids, solids, liquid crystals, synthetic polymers and biopolymers, piezoelectric materials, electrets and ferroelectrets, interfacial phenomena, high field conduction and breakdown phenomena in solids, liquids and gases and, importantly, the remarkable developments in dielectric instrumentation during this period. These activities reflected the need, and willingness, to move dielectrics researches with the times. As examples of the variety and diversity of these meetings we may refer briefly to the 1981, 1989 and 1996 Meetings. The 1981 Oxford Meeting on High Field Phenomena in Dielectrics included strong themes on fundamental and practical effects of high E-fields on the dielectric and conduction behaviour of liquids and solids, electrical treeing and dielectric breakdown, non-linear dielectric effects, electrets, thin-film devices and electro-rheology. The late 1980's had seen large initiatives in the UK and globally in the general area of Molecular Electronics so, in timely fashion, this was the subject of the 1989 Meeting in Bangor. The 1996 Smart Dielectrics Meeting at Canterbury reported subsequent advances in designer materials having electro-responsive and electro-optical properties. The programme concerned electro- and photo-active materials, mainly organic, in the form of polar dielectrics, polyelectrolytes, organic semi- and photo-conductors, photo-refractive polymer films, organic ferroelectric films, liquid crystalline polymer films, piezo- and pyro-electric polymer films, electroluminescent polymers, electro-rheological fluids and non-linear optical polymer films as described by leading international scientists. The physico-chemical functions of the materials were demonstrated and interpreted in terms of fundamental molecular properties. An Archive, containing full details of all the Meetings of the DDG and the Dielectrics Society, has been placed on the Website of the IOP Dielectrics Group by Professor John Fothergill. The 2009 meeting of The Dielectrics Group of the IOP at Reading was therefore held to celebrate 40 years of coordinated dielectrics research activity in the UK and beyond, as presented at these DDG and Dielectrics Society Meetings. To reflect the range of topics addressed since the first DDG meeting in 1968, the organizing committee chose to break away from the tradition of a strongly- themed event and, rather, adopted a general, inclusive approach, albeit based upon four broad technical areas: Theme 1: Molecular and bulk relaxation processes Theme 2: Space charge and charge transport in insulators Theme 3: Functional materials Theme 4: Bio-dielectrics and complex systems. The result was a highly successful conference that attracted some 90 delegates from 11 countries, giving the event a truly international flavour, and which included both regular and new attendees. Consequently, the organizing committee would like to thank, our colleagues at the IOP, the invited speakers, our sponsors at National Grid, EDF Energy and Dow Wire and Cables and all the delegates for making the event such a success. Professor Alun Vaughan, Professor Graham Williams

Reversible dielectric property degradation in moisture-contaminated fiber-reinforced laminates

NASA Astrophysics Data System (ADS)

Rodriguez, Luis A.; García, Carla; Fittipaldi, Mauro; Grace, Landon R.

2016-03-01

The potential for recovery of dielectric properties of three water-contaminated fiber-reinforced laminates is investigated using a split-post dielectric resonant technique at X-band (10 GHz). The three material systems investigated are bismaleimide (BMI) reinforced with an eight-harness satin weave quartz fabric, an epoxy resin reinforced with an eight- harness satin weave glass fabric (style 7781), and the same epoxy reinforced with a four-harness woven glass fabric (style 4180). A direct correlation between moisture content, dielectric constant, and loss tangent was observed during moisture absorption by immersion in distilled water at 25 °C for five equivalent samples of each material system. This trend is observed through at least 0.72% water content by weight for all three systems. The absorption of water into the BMI, 7781 epoxy, and 4180 epoxy laminates resulted in a 4.66%, 3.35%, and 4.01% increase in dielectric constant for a 0.679%, 0.608%, and 0.719% increase in water content by weight, respectively. Likewise, a significant increase was noticed in loss tangent for each material. The same water content is responsible for a 228%, 71.4%, and 64.1% increase in loss tangent, respectively. Subsequent to full desorption through drying at elevated temperature, the dielectric constant and loss tangent of each laminate exhibited minimal change from the dry, pre-absorption state. The dielectric constant and loss tangent change after the absorption and desorption cycle, relative to the initial state, was 0.144 % and 2.63% in the BMI, 0.084% and 1.71% in the style 7781 epoxy, and 0.003% and 4.51% in the style 4180 epoxy at near-zero moisture content. The similarity of dielectric constant and loss tangent in samples prior to absorption and after desorption suggests that any chemical or morphological changes induced by the presence of water have not caused irreversible changes in the dielectric properties of the laminates.

Structural, morphological, dielectric and impedance spectroscopy of lead-free Bi(Zn2/3Ta1/3)O3 electronic material

NASA Astrophysics Data System (ADS)

Halder, S.; Bhuyan, S.; Das, S. N.; Sahoo, S.; Choudhary, R. N. P.; Das, P.; Parida, K.

2017-12-01

A lead-free dielectric material [Bi(Zn2/3Ta1/3)O3] has been prepared using a solid state reaction technique at high-temperature. The resistive, conducting and capacitive characteristics of the prepared electronic material have been studied in different experimental conditions. The determination of basic crystal parameters and reflection indices confirm the development of polycrystalline compound with orthorhombic crystal structure. The study of frequency-temperature dependence of ac conductivity illustrates the nature and conduction mechanism of the material. On the basis of observed impedance data and detailed dielectric analysis, the existence of non-Debye type relaxation has been affirmed. The electronic charge carriers of compound have short range order that has been validated from the complex modulus and impedance spectrum. The detailed studies of resistive, capacitive, microstructural characteristics of the prepared material provide some useful data for considering the material as an electronic component for fabrication of devices.

Electronic inverter assembly with an integral snubber capacitor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Singh, Brij N.; Schmit, Christopher J.

A coaxial bus connector has a first end and a second end opposite the first end. The first end has a first positive terminal and a first negative terminal coupled to a primary direct current bus of a primary inverter. The second end has a second positive terminal and a second negative terminal coupled to the secondary direct current bus of a secondary inverter, wherein the coaxial bus connector comprises a dielectric material between a center conductor and a coaxial sleeve to form a snubber capacitor to absorb electrical energy or to absorb voltage spikes.

Medium band gap polymer based solution-processed high-κ composite gate dielectrics for ambipolar OFET

NASA Astrophysics Data System (ADS)

Canımkurbey, Betül; Unay, Hande; Çakırlar, Çiğdem; Büyükköse, Serkan; Çırpan, Ali; Berber, Savas; Altürk Parlak, Elif

2018-03-01

The authors present a novel ambipolar organic filed-effect transistors (OFETs) composed of a hybrid dielectric thin film of Ta2O5:PMMA nanocomposite material, and solution processed poly(selenophene, benzotriazole and dialkoxy substituted [1,2-b:4, 5-b‧] dithiophene (P-SBTBDT)-based organic semiconducting material as the active layer of the device. We find that the Ta2O5:PMMA insulator shows n-type conduction character, and its combination with the p-type P-SBTBDT organic semiconductor leads to an ambipolar OFET device. Top-gated OFETs were fabricated on glass substrate consisting of interdigitated ITO electrodes. P-SBTBDT-based material was spin coated on the interdigitated ITO electrodes. Subsequently, a solution processed Ta2O5:PMMA nanocomposite material was spin coated, thereby creating the gate dielectric layer. Finally, as a gate metal, an aluminum layer was deposited by thermal evaporation. The fabricated OFETs exhibited an ambipolar performance with good air-stability, high field-induced current and relatively high electron and hole mobilities although Ta2O5:PMMA nanocomposite films have slightly higher leakage current compared to the pure Ta2O5 films. Dielectric properties of the devices with different ratios of Ta2O5:PMMA were also investigated. The dielectric constant varied between 3.6 and 5.3 at 100 Hz, depending on the Ta2O5:PMMA ratio.

Development of Dielectric Elastomer Nanocomposites as Stretchable and Flexible Actuating Materials

NASA Astrophysics Data System (ADS)

Wang, Yu

Dielectric elastomers (DEs) are a new type of smart materials showing promising functionalities as energy harvesting materials as well as actuating materials for potential applications such as artificial muscles, implanted medical devices, robotics, loud speakers, micro-electro-mechanical systems (MEMS), tunable optics, transducers, sensors, and even generators due to their high electromechanical efficiency, stability, lightweight, low cost, and easy processing. Despite the advantages of DEs, technical challenges must be resolved for wider applications. A high electric field of at least 10-30 V/um is required for the actuation of DEs, which limits the practical applications especially in biomedical fields. We tackle this problem by introducing the multiwalled carbon nanotubes (MWNTs) in DEs to enhance their relative permittivity and to generate their high electromechanical responses with lower applied field level. This work presents the dielectric, mechanical and electromechanical properties of DEs filled with MWNTs. The micromechanics-based finite element models are employed to describe the dielectric, and mechanical behavior of the MWNT-filled DE nanocomposites. A sufficient number of models are computed to reach the acceptable prediction of the dielectric and mechanical responses. In addition, experimental results are analyzed along with simulation results. Finally, laser Doppler vibrometer is utilized to directly detect the enhancement of the actuation strains of DE nanocomposites filled with MWNTs. All the results demonstrate the effective improvement in the electromechanical properties of DE nanocomposites filled with MWNTs under the applied electric fields.

Synthesized tissue-equivalent dielectric phantoms using salt and polyvinylpyrrolidone solutions.

PubMed

Ianniello, Carlotta; de Zwart, Jacco A; Duan, Qi; Deniz, Cem M; Alon, Leeor; Lee, Jae-Seung; Lattanzi, Riccardo; Brown, Ryan

2018-07-01

To explore the use of polyvinylpyrrolidone (PVP) for simulated materials with tissue-equivalent dielectric properties. PVP and salt were used to control, respectively, relative permittivity and electrical conductivity in a collection of 63 samples with a range of solute concentrations. Their dielectric properties were measured with a commercial probe and fitted to a 3D polynomial in order to establish an empirical recipe. The material's thermal properties and MR spectra were measured. The empirical polynomial recipe (available at https://www.amri.ninds.nih.gov/cgi-bin/phantomrecipe) provides the PVP and salt concentrations required for dielectric materials with permittivity and electrical conductivity values between approximately 45 and 78, and 0.1 to 2 siemens per meter, respectively, from 50 MHz to 4.5 GHz. The second- (solute concentrations) and seventh- (frequency) order polynomial recipe provided less than 2.5% relative error between the measured and target properties. PVP side peaks in the spectra were minor and unaffected by temperature changes. PVP-based phantoms are easy to prepare and nontoxic, and their semitransparency makes air bubbles easy to identify. The polymer can be used to create simulated material with a range of dielectric properties, negligible spectral side peaks, and long T 2 relaxation time, which are favorable in many MR applications. Magn Reson Med 80:413-419, 2018. © 2017 International Society for Magnetic Resonance in Medicine. © 2017 International Society for Magnetic Resonance in Medicine.

Handbook of the optical, thermal and mechanical properties of six polycrystalline dielectric materials

NASA Technical Reports Server (NTRS)

Dewitt, D. P.

1972-01-01

The design data for six polycrystalline dielectric materials are presented to describe the optical, thermal, and mechanical properties. The materials are aluminum oxide, calcium fluoride, magnesium fluoride, magnesium oxide, silicon dioxide, and titanium dioxide. The primary interest is in the polycrystalline state, although single crystal data are included when appropriate. The temperature range is room temperature to melting point. The wavelength range is from near ultraviolet to near infrared.

Electrostatic Discharge Properties of Irradiated Nanocomposites

DTIC Science & Technology

2009-03-01

47 24. Example Plot of Mean Current vs . Voltage Difference Curves ..................................48 25...across dielectric surfaces and prevent ESD arcing to very high voltage differentials (Figure 2) [7]. All of these drastic alterations in material...structure currents (3) Area thickness and dielectric strength of the material (4) Total charge involved in the event (5) Breakdown voltage (6) Current

Micromachined Thin-Film Sensors for SOI-CMOS Co-Integration

NASA Astrophysics Data System (ADS)

Laconte, Jean; Flandre, D.; Raskin, Jean-Pierre

Co-integration of sensors with their associated electronics on a single silicon chip may provide many significant benefits regarding performance, reliability, miniaturization and process simplicity without significantly increasing the total cost. Micromachined Thin-Film Sensors for SOI-CMOS Co-integration covers the challenges and interests and demonstrates the successful co-integration of gas flow sensors on dielectric membrane, with their associated electronics, in CMOS-SOI technology. We firstly investigate the extraction of residual stress in thin layers and in their stacking and the release, in post-processing, of a 1 μm-thick robust and flat dielectric multilayered membrane using Tetramethyl Ammonium Hydroxide (TMAH) silicon micromachining solution.

Cavity resonator for dielectric measurements of high-ɛ, low loss materials, demonstrated with barium strontium zirconium titanate ceramics

NASA Astrophysics Data System (ADS)

Marksteiner, Quinn R.; Treiman, Michael B.; Chen, Ching-Fong; Haynes, William B.; Reiten, M. T.; Dalmas, Dale; Pulliam, Elias

2017-06-01

A resonant cavity method is presented which can measure loss tangents and dielectric constants for materials with dielectric constant from 150 to 10 000 and above. This practical and accurate technique is demonstrated by measuring barium strontium zirconium titanate bulk ferroelectric ceramic blocks. Above the Curie temperature, in the paraelectric state, barium strontium zirconium titanate has a sufficiently low loss that a series of resonant modes are supported in the cavity. At each mode frequency, the dielectric constant and loss tangent are obtained. The results are consistent with low frequency measurements and computer simulations. A quick method of analyzing the raw data using the 2D static electromagnetic modeling code SuperFish and an estimate of uncertainties are presented.

Rotating cylindrical and spherical triboelectric generators

DOEpatents

Wang, Zhong Lin; Zhu, Guang; Yang, Ya; Zhang, Hulin; Hu, Youfan; Yang, Jin; Jing, Qingshen

2017-02-14

A generator includes a first member, a second member and a sliding mechanism. The first member includes a first electrode and a first dielectric layer affixed to the first electrode. The first dielectric layer includes a first material that has a first rating on a triboelectric series. The second member includes a second material that has a second rating on the triboelectric series that is different from the first rating. The second member includes a second electrode. The second member is disposed adjacent to the first dielectric layer so that the first dielectric layer is disposed between the first electrode and the second electrode. The sliding mechanism is configured to cause relative movement between the first member and the second member, thereby generating an electric potential imbalance between the first electrode and the second electrode.

Cylindrical and spherical triboelectric generators

DOEpatents

Wang, Zhong Lin; Zhu, Guang; Yang, Ya; Zhang, Hulin; Hu, Youfan; Yang, Jin; Jing, Qingshen; Bai, Peng

2017-12-12

A generator includes a first member, a second member and a sliding mechanism. The first member includes a first electrode and a first dielectric layer affixed to the first electrode. The first dielectric layer includes a first material that has a first rating on a triboelectric series. The second member includes a second material that has a second rating on the triboelectric series that is different from the first rating. The second member includes a second electrode. The second member is disposed adjacent to the first dielectric layer so that the first dielectric layer is disposed between the first electrode and the second electrode. The sliding mechanism is configured to cause relative movement between the first member and the second member, thereby generating an electric potential imbalance between the first electrode and the second electrode.

Rational Construction of Uniform CoNi-Based Core-Shell Microspheres with Tunable Electromagnetic Wave Absorption Properties.

PubMed

Chen, Na; Jiang, Jian-Tang; Xu, Cheng-Yan; Yan, Shao-Jiu; Zhen, Liang

2018-02-16

Core-shell particles with integration of ferromagnetic core and dielectric shell are attracting extensive attention for promising microwave absorption applications. In this work, CoNi microspheres with conical bulges were synthesized by a simple and scalable liquid-phase reduction method. Subsequent coating of dielectric materials was conducted to acquire core-shell structured CoNi@TiO 2 composite particles, in which the thickness of TiO 2 is about 40 nm. The coating of TiO 2 enables the absorption band of CoNi to effectively shift from K u to S band, and endows CoNi@TiO 2 microspheres with outstanding electromagnetic wave absorption performance along with a maximum reflection loss of 76.6 dB at 3.3 GHz, much better than that of bare CoNi microspheres (54.4 dB at 17.8 GHz). The enhanced EMA performance is attributed to the unique core-shell structures, which can induce dipole polarization and interfacial polarization, and tune the dielectric properties to achieve good impedance matching. Impressively, TiO 2 coating endows the composites with better microwave absorption capability than CoNi@SiO 2 microspheres. Compared with SiO 2 , TiO 2 dielectric shells could protect CoNi microspheres from merger and agglomeration during annealed. These results indicate that CoNi@TiO 2 core-shell microspheres can serve as high-performance absorbers for electromagnetic wave absorbing application.

Colossal dielectric behavior of semiconducting Sr2TiMnO6 ceramics

NASA Astrophysics Data System (ADS)

Meher, K. R. S. Preethi; Varma, K. B. R.

2009-02-01

Manganitelike double perovskite Sr2TiMnO6 (STMO) ceramics fabricated from the powders synthesized via the solid-state reaction route, exhibited dielectric constants as high as ˜105 in the low frequency range (100 Hz-10 kHz) at room temperature. The Maxwell-Wagner type of relaxation mechanism was found to be more appropriate to rationalize such high dielectric constant values akin to that observed in materials such as KxTiyNi(1-x-y)O and CaCu3Ti4O12. The dielectric measurements carried out on the samples with different thicknesses and electrode materials reflected the influence of extrinsic effects. The impedance studies (100 Hz-10 MHz) in the 180-300 K temperature range revealed the presence of two dielectric relaxations corresponding to the grain boundary and the electrode. The dielectric response of the grain boundary was found to be weakly dependent on the dc bias field (up to 11 V/cm). However, owing to the electrode polarization, the applied ac/dc field had significant effect on the low frequency dielectric response. At low temperatures (100-180 K), the dc conductivity of STMO followed a variable range hopping behavior. Above 180 K, it followed the Arrhenius behavior because of the thermally activated conduction process. The bulk conductivity relaxation owing to the localized hopping of charge carriers obeyed the typical universal dielectric response.

Multilayer dielectric diffraction gratings

DOEpatents

Perry, Michael D.; Britten, Jerald A.; Nguyen, Hoang T.; Boyd, Robert; Shore, Bruce W.

1999-01-01

The design and fabrication of dielectric grating structures with high diffraction efficiency used in reflection or transmission is described. By forming a multilayer structure of alternating index dielectric materials and placing a grating structure on top of the multilayer, a diffraction grating of adjustable efficiency, and variable optical bandwidth can be obtained. Diffraction efficiency into the first order in reflection varying between 1 and 98 percent has been achieved by controlling the design of the multilayer and the depth, shape, and material comprising the grooves of the grating structure. Methods for fabricating these gratings without the use of ion etching techniques are described.

Multilayer dielectric diffraction gratings

DOEpatents

Perry, M.D.; Britten, J.A.; Nguyen, H.T.; Boyd, R.; Shore, B.W.

1999-05-25

The design and fabrication of dielectric grating structures with high diffraction efficiency used in reflection or transmission is described. By forming a multilayer structure of alternating index dielectric materials and placing a grating structure on top of the multilayer, a diffraction grating of adjustable efficiency, and variable optical bandwidth can be obtained. Diffraction efficiency into the first order in reflection varying between 1 and 98 percent has been achieved by controlling the design of the multilayer and the depth, shape, and material comprising the grooves of the grating structure. Methods for fabricating these gratings without the use of ion etching techniques are described. 7 figs.

Low-Dielectric Polyimides

NASA Technical Reports Server (NTRS)

St. Clair, Anne K.; St. Clair, Terry L.; Winfree, William P.; Emerson, Bert R., Jr.

1989-01-01

New process developed to produce aromatic condensation polyimide films and coatings having dielectric constants in range of 2.4 to 3.2. Materials better electrical insulators than state-of-the-art commercial polyimides. Several low-dielectric-constant polyimides have excellent resistance to moisture. Useful as film and coating materials for both industrial and aerospace applications where high electrical insulation, resistance to moisture, mechanical strength, and thermal stability required. Applicable to production of high-temperature and moisture-resistance adhesives, films, photoresists, and coatings. Electronic applications include printed-circuit boards, both of composite and flexible-film types and potential use in automotive, aerospace, and electronic industries.

Theory of Dielectric Breakdown in Randomly Inhomogeneous Materials

NASA Astrophysics Data System (ADS)

Gyure, Mark Franklin

1990-01-01

Two models of dielectric breakdown in disordered metal-insulator composites have been developed in an attempt to explain in detail the greatly reduced breakdown electric field observed in these materials. The first model is a two dimensional model in which the composite is treated as a random array of conducting cylinders embedded in an otherwise uniform dielectric background. The two dimensional samples are generated by the Monte Carlo method and a discretized version of the integral form of Laplace's equation is solved to determine the electric field in each sample. Breakdown is modeled as a quasi-static process by which one breakdown at a time occurs at the point of maximum electric field in the system. A cascade of these local breakdowns leads to complete dielectric failure of the system after which the breakdown field can be determined. A second model is developed that is similar to the first in terms of breakdown dynamics, but uses coupled multipole expansions of the electrostatic potential centered at each particle to obtain a more computationally accurate and faster solution to the problem of determining the electric field at an arbitrary point in a random medium. This new algorithm allows extension of the model to three dimensions and treats conducting spherical inclusions as well as cylinders. Successful implementation of this algorithm relies on the use of analytical forms for off-centered expansions of cylindrical and spherical harmonics. Scaling arguments similar to those used in theories of phase transitions are developed for the breakdown field and these arguments are discussed in context with other theories that have been developed to explain the break-down behavior of random resistor and fuse networks. Finally, one of the scaling arguments is used to predict the breakdown field for some samples of solid fuel rocket propellant tested at the China Lake Naval Weapons Center and is found to compare quite well with the experimentally measured breakdown fields.

Process for manufacturing multilayer capacitors

DOEpatents

Lauf, R.J.; Holcombe, C.E.; Dykes, N.L.

1996-01-02

The invention is directed to a method of manufacture of multilayer electrical components, especially capacitors, and components made by such a method. High capacitance dielectric materials and low cost metallizations layered with such dielectrics may be fabricated as multilayer electrical components by sintering the metallizations and the dielectrics during the fabrication process by application of microwave radiation. 4 figs.

Nonexistence of Smooth Electromagnetic Fields in Nonlinear Dielectrics. II. Shock Development in a Half-Space.

DTIC Science & Technology

1982-03-01

NUMB9ER 00 AU THOR(s) 8. CON7RACT OR GRANT .%Uv3ERHj) Frederick Bloom AFOSR-81-0171 PERFORMING ORGANIZATION NAME AND ADDRESS 10. PrOGRAK ELEMAE:NT...material coff -iceret which may be associated with a particular nonlinear dielectric substance. For most common nonlinear dielectric substance, e

Thin-Ribbon Tapered Couplers For Dielectric Waveguides

NASA Technical Reports Server (NTRS)

Otoshi, Tom Y.; Shimabukuro, Fred I.; Yeh, Cavour

1996-01-01

Thin-ribbon tapered couplers proposed for launching electro-magnetic waves into dielectric waveguides, which include optical fibers. Intended for use with ribbon dielectric waveguides designed for operation at millimeter or submillimeter wavelengths, made of high-relative-permittivity, low-loss materials and thicknesses comparable to or less than free-space design wavelengths. Coupling efficiencies exceeds those of older tapered couplers.

Fruit and Vegetable Quality Assessment via Dielectric Sensing

PubMed Central

El Khaled, Dalia; Novas, Nuria; Gazquez, Jose A.; Garcia, Rosa M.; Manzano-Agugliaro, Francisco

2015-01-01

The demand for improved food quality has been accompanied by a technological boost. This fact enhances the possibility of improving the quality of horticultural products, leading towards healthier consumption of fruits and vegetables. A better electrical characterization of the dielectric properties of fruits and vegetables is required for this purpose. Moreover, a focused study of dielectric spectroscopy and advanced dielectric sensing is a highly interesting topic. This review explains the dielectric property basics and classifies the dielectric spectroscopy measurement techniques. It comprehensively and chronologically covers the dielectric experiments explored for fruits and vegetables, along with their appropriate sensing instrumentation, analytical modelling methods and conclusions. An in-depth definition of dielectric spectroscopy and its usefulness in the electric characterization of food materials is presented, along with the various sensor techniques used for dielectric measurements. The collective data are tabulated in a summary of the dielectric findings in horticultural field investigations, which will facilitate more advanced and focused explorations in the future. PMID:26131680

Inductive dielectric analyzer

NASA Astrophysics Data System (ADS)

Agranovich, Daniel; Polygalov, Eugene; Popov, Ivan; Ben Ishai, Paul; Feldman, Yuri

2017-03-01

One of the approaches to bypass the problem of electrode polarization in dielectric measurements is the free electrode method. The advantage of this technique is that, the probing electric field in the material is not supplied by contact electrodes, but rather by electromagnetic induction. We have designed an inductive dielectric analyzer based on a sensor comprising two concentric toroidal coils. In this work, we present an analytic derivation of the relationship between the impedance measured by the sensor and the complex dielectric permittivity of the sample. The obtained relationship was successfully employed to measure the dielectric permittivity and conductivity of various alcohols and aqueous salt solutions.

Effect of surface moisture on dielectric behavior of ultrafine BaTiO3 particulates.

NASA Technical Reports Server (NTRS)

Mountvala, A. J.

1971-01-01

The effects of adsorbed H2O on the dielectric properties of ultrafine BaTiO3 particulates of varying particle size and environmental history were determined. The dielectric behavior depends strongly on surface hydration. No particle size dependence of dielectric constant was found for dehydroxylated surfaces in ultrafine particulate (unsintered) BaTiO3 materials. For equivalent particle sizes, the ac conductivity is sensitive to surface morphology. Reactions with H2O vapor appear to account for the variations in dielectric properties. Surface dehydration was effectively accomplished by washing as-received powders in isopropanol.

Strong Photoluminescence Enhancement in All-Dielectric Fano Metasurface with High Quality Factor.

PubMed

Yuan, Shuai; Qiu, Xingzhi; Cui, Chengcong; Zhu, Liangqiu; Wang, Yuxi; Li, Yi; Song, Jinwen; Huang, Qingzhong; Xia, Jinsong

2017-11-28

All-dielectric metamaterials offer great flexibility for controlling light-matter interaction, owing to their strong electric and magnetic resonances with negligible loss at wavelengths above the material bandgap. Here, we propose an all-dielectric asymmetric metasurface structure exhibiting high quality factor and prominent Fano line shape. Over three-orders photoluminescence enhancement is demonstrated in the fabricated all-dielectric metasurface with record-high quality factor of 1011. We find this strong emission enhancement is attributed to the coherent Fano resonances, which originate from the destructive interferences of antisymmetric displacement currents in the asymmetric all-dielectric metasurface. Our observations show a promising approach to realize light emitters based on all-dielectric metasurfaces.

Dielectric breakdown of additively manufactured polymeric materials

DOE PAGES

Monzel, W. Jacob; Hoff, Brad W.; Maestas, Sabrina S.; ...

2016-01-11

Dielectric strength testing of selected Polyjet-printed polymer plastics was performed in accordance with ASTM D149. This dielectric strength data is compared to manufacturer-provided dielectric strength data for selected plastics printed using the stereolithography (SLA), fused deposition modeling (FDM), and selective laser sintering (SLS) methods. Tested Polyjet samples demonstrated dielectric strengths as high as 47.5 kV/mm for a 0.5 mm thick sample and 32.1 kV/mm for a 1.0 mm sample. As a result, the dielectric strength of the additively manufactured plastics evaluated as part of this study was lower than the majority of non-printed plastics by at least 15% (with themore » exception of polycarbonate).« less

Dielectric breakdown of additively manufactured polymeric materials

DOE Office of Scientific and Technical Information (OSTI.GOV)

Monzel, W. Jacob; Hoff, Brad W.; Maestas, Sabrina S.

Dielectric strength testing of selected Polyjet-printed polymer plastics was performed in accordance with ASTM D149. This dielectric strength data is compared to manufacturer-provided dielectric strength data for selected plastics printed using the stereolithography (SLA), fused deposition modeling (FDM), and selective laser sintering (SLS) methods. Tested Polyjet samples demonstrated dielectric strengths as high as 47.5 kV/mm for a 0.5 mm thick sample and 32.1 kV/mm for a 1.0 mm sample. As a result, the dielectric strength of the additively manufactured plastics evaluated as part of this study was lower than the majority of non-printed plastics by at least 15% (with themore » exception of polycarbonate).« less

Phase-coherent elastic scattering of electromagnetic waves from a random array of resonant dielectric ridges on a dielectric substrate: Weak roughness limit

NASA Astrophysics Data System (ADS)

Danila, B.; McGurn, A. R.

2005-03-01

A theoretical discussion is given of the diffuse scattering of p -polarized electromagnetic waves from a vacuum-dielectric interface characterized by a one-dimensional disorder in the form of parallel, Gaussian shaped, dielectric ridges positioned at random on a planar semi-infinite dielectric substrate. The parameters of the surface roughness are chosen so that the surface is characterized as weakly rough with a low ridge concentration. The emphasis is on phase coherent features in the speckle pattern of light scattered from the surface. These features are determined from the intensity-intensity correlation function of the speckle pattern and are studied as functions of the frequency of light for frequencies near the dielectric frequency resonances of the ridge material. In the first part of the study, the ridges on the substrate are taken to be identical, made from either GaAs, NaF, or ZnS. The substrate for all cases is CdS. In a second set of studies, the heights and widths of the ridges are statistically distributed. The effects of these different types of randomness on the scattering from the random array of dielectric ridges is determined near the dielectric resonance frequency of the ridge material. The work presented is an extension of studies [A. B. McGurn and R. M. Fitzgerald, Phys. Rev. B 65, 155414 (2002)] that originally treated only the differential reflection coefficient of the diffuse scattering of light (not speckle correlation functions) from a system of identical ridges. The object of the present work is to demonstrate the effects of the dielectric frequency resonances of the ridge materials on the phase coherent features found in the speckle patterns of the diffusely scattered light. The dielectric frequency resonances are shown to enhance the observation of the weak localization of electromagnetic surface waves at the random interface. The frequencies treated in this work are in the infrared. Previous weak localization studies have concentrated mainly on the visible and ultraviolet.

Study of PECVD films containing flourine and carbon and diamond like carbon films for ultra low dielectric constant interlayer dielectric applications

NASA Astrophysics Data System (ADS)

Sundaram, Nandini Ganapathy

Lowering the capacitance of Back-end-of-line (BEOL) structures by decreasing the dielectric permittivity of the interlayer dielectric material in integrated circuits (ICs) lowers device delay times, power consumption and parasitic capacitance. a:C-F films that are thermally stable at 400°C were deposited using tetrafluorocarbon and disilane (5% by volume in Helium) as precursors. The bulk dielectric constant (k) of the film was optimized from 2.0 / 2.2 to 1.8 / 1.91 as-deposited and after heat treatment. Films, with highly promising k-values but discarded for failing to meet shrinkage rate requirements were salvaged by utilizing a novel extended heat treatment scheme. Film properties including chemical bond structure, F/C ratio, refractive index, surface planarity, contact angle, dielectric constant, flatband voltage shift, breakdown field potential and optical energy gap were evaluated by varying process pressure, power, substrate temperature and flow rate ratio (FRR) of processing gases. Both XPS and FTIR results confirmed that the stoichiometry of the ultra-low k (ULK) film is close to that of CF2 with no oxygen. C-V characteristics indicated the presence of negative charges that are either interface trapped charges or bulk charges. Average breakdown field strength was in the range of 2-8 MV/cm while optical energy gap varied between 2.2 eV and 3.4 eV. Irradiation or plasma damage significantly impacts the ability to integrate the film in VSLI circuits. The film was evaluated after exposure to oxygen plasma and HMDS vapors and no change in the FTIR spectra or refractive index was observed. Film is resistant to attack by developers CD 26 and KOH. While the film dissolves in UVN-30 negative resist, it is impermeable to PGDMA. A 12% increase in dielectric constant and a decrease in contact angle from 65° to 47° was observed post e-beam exposure. The modified Gaseous Electronics Conference (mGEC) reference cell was used to deposit DLC films using CH4 and Argon as precursors. Pre and post-anneal structural properties of the deposited thin film were studied using laser excitation of 633 nm in a Jobin Yvon Labram high-resolution micro-Raman spectrometer. The film was further characterized using AFM, FTIR, XRD, goniometry and electrical testing. Average film roughness as measured by AFM was less than 1 nm, the k-value was 2.5, and the contact angle with water was 42°. Lastly, layered dielectric films comprising of Diamond like Carbon (DLC) and Amorphous Fluorocarbon (a:C-F) were generated using three different stack configurations and subsequently evaluated. Seven unique process conditions generated promising stacks with k-values between 1.69 and 1.95. Of these, only one film exhibited very low shrinkage rates acceptable for semiconductor device processing. Annealed a:C-F films with DLC top coat are similar in bonding structure to as deposited FC films proving that DLC deposition significantly modified the bonding structure of the underlying annealed a:C-F film. Stacks comprised of a:C-F films with higher oxygen content, deposited using high FRRs exhibited both macro and microbuckling to a larger degree and extent. Film integrity was preserved by annealing the Fluorocarbon component or by providing a DLC base coat.

Modeling of Slot Waveguide Sensors Based on Polymeric Materials

PubMed Central

Bettotti, Paolo; Pitanti, Alessandro; Rigo, Eveline; De Leonardis, Francesco; Passaro, Vittorio M. N.; Pavesi, Lorenzo

2011-01-01

Slot waveguides are very promising for optical sensing applications because of their peculiar spatial mode profile. In this paper we have carried out a detailed analysis of mode confinement properties in slot waveguides realized in very low refractive index materials. We show that the sensitivity of a slot waveguide is not directly related to the refractive index contrast of high and low materials forming the waveguide. Thus, a careful design of the structures allows the realization of high sensitivity devices even in very low refractive index materials (e.g., polymers) to be achieved. Advantages of low index dielectrics in terms of cost, functionalization and ease of fabrication are discussed while keeping both CMOS compatibility and integrable design schemes. Finally, applications of low index slot waveguides as substitute of bulky fiber capillary sensors or in ring resonator architectures are addressed. Theoretical results of this work are relevant to well established polymer technologies. PMID:22164020

Room temperature magnetoelectric coupling and electrical properties of Ni doped Co - ferrite - PZT nanocomposites

NASA Astrophysics Data System (ADS)

Chakraborty, Sarit; Mandal, S. K.; Dey, P.; Saha, B.

2018-04-01

Multiferroic magnetoelectric materials are very interesting for the researcher for the potential application in device preparation. We have prepared 0.3Ni0.5Co0.5Fe2O4 - 0.7PbZr0.58Ti0.42O3 magnetoelectric nanocomposites through chemical pyrophoric reaction process followed by solid state reaction and represented magnetoelectric coupling coefficient, thermally and magnetically tunable AC electrical properties. For the structural characterization XRD pattern and SEM micrograph have been analyzed. AC electrical properties reveal that the grain boundaries resistances are played dominating role in the conduction process in the system. Dielectric studies are represents that the dielectric polarization is decreased with frequency as well as magnetic field where it increases with increasing temperature. The dielectric profiles also represents the electromechanical resonance at a frequency of ˜183 kHz. High dielectric constant and low dielectric loss at room temperature makes the material very promising for the application of magnetic field sensor devices.

A flexible insulator of a hollow SiO2 sphere and polyimide hybrid for flexible OLEDs.

PubMed

Kim, Min Kyu; Kim, Dong Won; Shin, Dong Wook; Seo, Sang Joon; Chung, Ho Kyoon; Yoo, Ji Beom

2015-01-28

The fabrication of interlayer dielectrics (ILDs) in flexible organic light-emitting diodes (OLEDs) not only requires flexible materials with a low dielectric constant, but also ones that possess the electrical, thermal, chemical, and mechanical properties required for optimal device performance. Porous polymer-silica hybrid materials were prepared to satisfy these requirements. Hollow SiO2 spheres were synthesized using atomic layer deposition (ALD) and a thermal calcination process. The hybrid film, which consists of hollow SiO2 spheres and polyimide, shows a low dielectric constant of 1.98 and excellent thermal stability up to 500 °C. After the bending test for 50 000 cycles, the porous hybrid film exhibits no degradation in its dielectric constant or leakage current. These results indicate that the hybrid film made up of hollow SiO2 spheres and polyimide (PI) is useful as a flexible insulator with a low dielectric constant and high thermal stability for flexible OLEDs.

Fabrication of PVDF-TrFE based bilayered PbTiO{sub 3}/PVDF-TrFE films capacitor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nurbaya, Z., E-mail: nurbayazainal@gmail.com; Razak School of Engineering and Advanced Technology, Universiti Teknologi Malaysia, 54100 Kuala Lumpur; Wahid, M. H.

2016-07-06

Development of high performance capacitor is reaching towards new generation where the ferroelectric materials take places as the active dielectric layer. The motivation of this study is to produce high capacitance device with long life cycle. This was configured by preparing bilayered films where lead titanate as an active dielectric layer and stacked with the top dielectric layer, poly(vinyledenefluoride-trifluoroethylene). Both of them are being referred that have one in common which is ferroelectric behavior. Therefore the combination of ceramic and polymer ferroelectric material could perform optimum dielectric characteristic for capacitor applications. The fabrication was done by simple sol-gel spin coatingmore » method that being varied at spinning speed property for polymer layers, whereas maintaining the ceramic layer. The characterization of PVDF-TrFE/PbTiO3 was performed according to metal-insulator-metal stacked capacitor measurement which includes structural, dielectric, and ferroelectric measurement.« less

Electrical capacitance volume tomography with high contrast dielectrics using a cuboid sensor geometry

NASA Astrophysics Data System (ADS)

Nurge, Mark A.

2007-05-01

An electrical capacitance volume tomography system has been created for use with a new image reconstruction algorithm capable of imaging high contrast dielectric distributions. The electrode geometry consists of two 4 × 4 parallel planes of copper conductors connected through custom built switch electronics to a commercially available capacitance to digital converter. Typical electrical capacitance tomography (ECT) systems rely solely on mutual capacitance readings to reconstruct images of dielectric distributions. This paper presents a method of reconstructing images of high contrast dielectric materials using only the self-capacitance measurements. By constraining the unknown dielectric material to one of two values, the inverse problem is no longer ill-determined. Resolution becomes limited only by the accuracy and resolution of the measurement circuitry. Images were reconstructed using this method with both synthetic and real data acquired using an aluminium structure inserted at different positions within the sensing region. Comparisons with standard two-dimensional ECT systems highlight the capabilities and limitations of the electronics and reconstruction algorithm.

Electrical capacitance volume tomography of high contrast dielectrics using a cuboid geometry

NASA Astrophysics Data System (ADS)

Nurge, Mark A.

An Electrical Capacitance Volume Tomography system has been created for use with a new image reconstruction algorithm capable of imaging high contrast dielectric distributions. The electrode geometry consists of two 4 x 4 parallel planes of copper conductors connected through custom built switch electronics to a commercially available capacitance to digital converter. Typical electrical capacitance tomography (ECT) systems rely solely on mutual capacitance readings to reconstruct images of dielectric distributions. This dissertation presents a method of reconstructing images of high contrast dielectric materials using only the self capacitance measurements. By constraining the unknown dielectric material to one of two values, the inverse problem is no longer ill-determined. Resolution becomes limited only by the accuracy and resolution of the measurement circuitry. Images were reconstructed using this method with both synthetic and real data acquired using an aluminum structure inserted at different positions within the sensing region. Comparisons with standard two dimensional ECT systems highlight the capabilities and limitations of the electronics and reconstruction algorithm.

Morphological, Raman, electrical and dielectric properties of rare earth doped X-type hexagonal ferrites

NASA Astrophysics Data System (ADS)

Majeed, Abdul; Khan, Muhammad Azhar; ur Raheem, Faseeh; Ahmad, Iftikhar; Akhtar, Majid Niaz; Warsi, Muhammad Farooq

2016-12-01

The influence of rare-earth metals (La, Nd, Gd, Tb, Dy) on morphology, Raman, electrical and dielectric properties of Ba2NiCoRExFe28-xO46 ferrites were studied. The scanning electron microscopy (SEM) exhibited the platelet like structure of these hexagonal ferrites. The surface morphology indicated the formation of ferrite grains in the nano-regime scale. The bands obtained at lower wave number may be attributed to the metal-oxygen vibration at octahedral site which confirm the development of hexagonal phase of these ferrites. The resonance peaks were observed in dielectric constant, dielectric loss factor and quality factor versus frequency graphs. These dielectric parameters indicate that these ferrites nano-materials are potential candidates in the high frequency applications. The enhancement in DC electric resistivity from 2.48×108 to 1.20×109 Ω cm indicates that the prepared materials are beneficial for decreasing the eddy current losses at high frequencies and for the fabrication of multilayer chip inductor (MLCI) devices.

Multiferroics BiMn1-xAlxO3 nanoparticles: Synthesis, characterization and evaluation of various structural, physical, electrical and dielectric parameters

NASA Astrophysics Data System (ADS)

Ahmad, Bashir; Raissat, Rabia; Mumtaz, Saleem; Ahmad, Zahoor; Sadiq, Imran; Ashiq, Muhammad Naeem; Najam-ul-Haq, Muhammad

2017-07-01

The aluminium substituted bismuth based manganates with nominal composition BiMn1-xAlxO3 (x = 0.0, 0.2, 0.4, 0.6 and 0.8) were prepared by the simple microemulsion method. The alteration in their structural, electrical and dielectric parameters due to Al substitution has been investigated. The X-ray diffraction analysis (XRD) confirms the formation of single phase orthorhombic with crystallite size ranges from 32 to 52 nm. The morphological features and particle size were determined by using scanning electron microscopy (SEM). The dc electrical resistivity increased from 6 × 108 to 8 × 109 Ω cm with the increase in substituent concentration. The dielectric constant, dielectric loss tangent and dielectric loss factor decreased with the increase in frequency. The increase in electrical resistivity makes the synthesized materials paramount over other materials and can be useful for technological applications in microwave devices.

A Combined Model of Charging of the Surface and Bulk of a Dielectric Target by Electrons with the Energies 10-30 keV

NASA Astrophysics Data System (ADS)

Zykov, V. M.; Neiman, D. A.

2018-04-01

A physico-mathematical model of the processes of radiation-induced charging of dielectric materials with open surfaces, irradiated with monoenergetic electrons in the energy range 10-30 keV, is described. The model takes into account the relationship between the processes of surface and bulk charging for the given conditions of the experimental design, which accounts for the effect of anomalously long charging of dielectrics after the incident energy of primary electrons during charging is reduced to below the second critical energy for the secondary electronic emission coefficient. The initial fast phase of charging a high-resistivity dielectric material (Al2O3) is investigated. It is shown that as the incident electron energy is approaching the second critical energy during charging, the secondary electronic emission is partially suppressed due to negative charging of the open surface of the dielectric and formation of a near-surface inversion electrical field retarding the electronic emission yield.

The contribution of 180° domain wall motion to dielectric properties quantified from in situ X-ray diffraction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fancher, C. M.; Brewer, S.; Chung, C. C.

2017-03-01

The contribution of 180° domain wall motion to polarization and dielectric properties of ferroelectric materials has yet to be determined experimentally. In this paper, an approach for estimating the extent of (180°) domain reversal during application of electric fields is presented. We demonstrate this method by determining the contribution of domain reversal to polarization in soft lead zirconate titanate during application of strong electric fields. At the maximum applied field, domain reversal was determined to account for >80% of the measured macroscopic polarization. We also apply the method to quantify the contribution of domain reversal to the weak-field dielectric permittivitymore » of BaTiO 3. The results of this analysis determined that domain reversal accounts for up to ~70% of the macroscopic dielectric permittivity in BaTiO 3. These results demonstrate the predominance of domain reversal to high and low-field dielectric response in ferroelectric polycrystalline materials.« less

THz - ToF Optical Layer Analysis (OLA) to determine optical properties of dielectric materials

NASA Astrophysics Data System (ADS)

Spranger, Holger; Beckmann, Jörg

2017-02-01

Electromagnetic waves with frequencies between 0.1 and 10 THz are described as THz-radiation (T-ray). The ability to penetrate dielectric materials makes T-rays attractive to reveal discontinuities in polymer and ceramic materials. THz-Time Domain Spectroscopy Systems (THz-TDS) are available on the market today which operates with THz-pulses transmitted and received by optically pumped semiconductor antennas. In THz-TDS the travelling time (ToF) and shape of the pulse is changed if it interacts with the dielectric material and its inherent discontinuities. A tomogram of the object under the test can be reconstructed from time of flight diffraction (ToFD) scans if a synthetic focusing aperture (SAFT) algorithm is applied. The knowledge of the base materials shape and optical properties is essential for a proper reconstruction result. To obtain these properties a model is assumed which describes the device under the test as multilayer structure composed of thin layers with different dielectric characteristics. The Optical Layer Analysis (OLA) is able to fulfill these requirements. A short description why the optical properties are crucial for meaningful SAFT reconstruction results will be given first. Afterwards the OLA will be derived and applied on representative samples to discuss and evaluate its benefits and limits.

Multi-Scale Modeling of Novel Hall Thrusters: Understanding Physics of CHT and DCF Thrusters

DTIC Science & Technology

2011-12-30

thrusters having over 40 years of flight heritage (the first variant, SPT -50, was flown aboard the Soviet Meteor spacecraft in 1971), the community...symmetric sheath. This finding was touched upon in our previous work.14 The walls of this SPT -type thruster are made of a dielectric material. The...One theory of SPT operation suggests that electron impacts of the dielectric material result in emission of secondary electrons from the material

High voltage photoconductive switch package

DOE Office of Scientific and Technical Information (OSTI.GOV)

Caporaso, George J.

2016-11-22

A photoconductive switch having a wide bandgap material substrate between opposing electrodes, and a doped dielectric filler that is in contact with both the electrodes and the substrate at the triple point. The dielectric filler material is doped with a conductive material to make it partially or completely conducting, to minimize the field enhancement near the triple point both when the substrate is not conducting in the "off" state and when the substrate is rendered conducting by radiation in the "on" state.

Soft pneumatic grippers embedded with stretchable electroadhesion

NASA Astrophysics Data System (ADS)

Guo, J.; Elgeneidy, K.; Xiang, C.; Lohse, N.; Justham, L.; Rossiter, J.

2018-05-01

Current soft pneumatic grippers cannot robustly grasp flat materials and flexible objects on curved surfaces without distorting them. Current electroadhesive grippers, on the other hand, are difficult to actively deform to complex shapes to pick up free-form surfaces or objects. An easy-to-implement PneuEA gripper is proposed by the integration of an electroadhesive gripper and a two-fingered soft pneumatic gripper. The electroadhesive gripper was fabricated by segmenting a soft conductive silicon sheet into a two-part electrode design and embedding it in a soft dielectric elastomer. The two-fingered soft pneumatic gripper was manufactured using a standard soft lithography approach. This novel integration has combined the benefits of both the electroadhesive and soft pneumatic grippers. As a result, the proposed PneuEA gripper was not only able to pick-and-place flat and flexible materials such as a porous cloth but also delicate objects such as a light bulb. By combining two soft touch sensors with the electroadhesive, an intelligent and shape-adaptive PneuEA material handling system has been developed. This work is expected to widen the applications of both soft gripper and electroadhesion technologies.

Design and fabrication of far ultraviolet filters based on π-multilayer technology in high-k materials

PubMed Central

Wang, Xiao-Dong; Chen, Bo; Wang, Hai-Feng; He, Fei; Zheng, Xin; He, Ling-Ping; Chen, Bin; Liu, Shi-Jie; Cui, Zhong-Xu; Yang, Xiao-Hu; Li, Yun-Peng

2015-01-01

Application of π-multilayer technology is extended to high extinction coefficient materials, which is introduced into metal-dielectric filter design. Metal materials often have high extinction coefficients in far ultraviolet (FUV) region, so optical thickness of metal materials should be smaller than that of the dielectric material. A broadband FUV filter of 9-layer non-periodic Al/MgF2 multilayer was successfully designed and fabricated and it shows high reflectance in 140–180 nm, suppressed reflectance in 120–137 nm and 181–220 nm. PMID:25687255

Solar cell contact formation using laser ablation

DOEpatents

Harley, Gabriel; Smith, David D.; Cousins, Peter John

2014-07-22

The formation of solar cell contacts using a laser is described. A method of fabricating a back-contact solar cell includes forming a poly-crystalline material layer above a single-crystalline substrate. The method also includes forming a dielectric material stack above the poly-crystalline material layer. The method also includes forming, by laser ablation, a plurality of contacts holes in the dielectric material stack, each of the contact holes exposing a portion of the poly-crystalline materiat layer; and forming conductive contacts in the plurality of contact holes.

Research on the Crystal Growth and Dielectric Properties of High Permittivity Ferroelectric Materials.

DTIC Science & Technology

1984-05-01

decrease in millimeter wave dielectric losses at low temperatures now makes it imperitive to examine the value of dn/dE from liquid nitrogen up to and...and dielectric losses, with both / decreasing at low temperatures down to 77K for the electric field parallel to the polar axis. The observed changes in...xSrxK -vNa Nb501 5 Crystals at RF and Millimeter Wave Frqutncies ................................. 30 APPENDIX 2 Low and High Frequency Dielectric

Broadband dielectric spectroscopy on single-crystalline and ceramic CaCu3Ti4O12

NASA Astrophysics Data System (ADS)

Krohns, S.; Lunkenheimer, P.; Ebbinghaus, S. G.; Loidl, A.

2007-07-01

The authors present dielectric measurements of the colossal dielectric constant material CaCu3Ti4O12 extending up to 1.3GHz also covering so far only rarely investigated single-crystalline samples. Special emphasis is put on the second relaxation reported in several works on polycrystals, which the authors detect also in single crystals. For polycrystalline samples, the authors provide a recipe to achieve values of the dielectric constant as high as in single crystals.

Optical humidity sensor

DOEpatents

Tarvin, Jeffrey A.

1987-01-01

An optical dielectric humidity sensor which includes a dielectric mirror having multiple alternating layers of two porous water-adsorbent dielectric materials with differing indices of refraction carried by a translucent substrate. A narrow-band polarized light source is positioned to direct light energy onto the mirror, and detectors are positioned to receive light energy transmitted through and reflected by the mirror. A ratiometer indicates humidity in the atmosphere which surrounds the dielectric mirror as a function of a ratio of light energies incident on the detectors.

Optical humidity sensor

DOEpatents

Tarvin, J.A.

1987-02-10

An optical dielectric humidity sensor is disclosed which includes a dielectric mirror having multiple alternating layers of two porous water-adsorbent dielectric materials with differing indices of refraction carried by a translucent substrate. A narrow-band polarized light source is positioned to direct light energy onto the mirror, and detectors are positioned to receive light energy transmitted through and reflected by the mirror. A ratiometer indicates humidity in the atmosphere which surrounds the dielectric mirror as a function of a ratio of light energies incident on the detectors. 2 figs.

Dielectric relaxation of NdMnO{sub 3} nanoparticles

DOE Office of Scientific and Technical Information (OSTI.GOV)

Saha, Sujoy, E-mail: sahasujoy3@gmail.com; Chanda, Sadhan; Dutta, Alo

2013-11-15

Graphical abstract: (a) TEM image of particle distribution of NMO. (b) HRTEM image of a single NMO particle under 4,000,000× magnification. (c) SAED pattern of a single NMO nanoparticle. - Highlights: • NdMnO{sub 3} nanoparticles are synthesized by sol–gel process. • TEM micrograph shows a granular characteristic with an average particle size of ∼50 nm. • HRTEM is consistent with the spacing between the (2 0 0) planes of the orthorhombic NdMnO{sub 3}. • Band gap is found to be 4.4 eV. • Cole–Cole model has been used to explain the dielectric relaxation in the material. • The activation energymore » of the material is found to be ∼0.43 eV. - Abstract: The neodymium manganate (NdMnO{sub 3}) nanoparticles are synthesized by the sol–gel process. The phase formation and particle size of the sample are determined by X-ray diffraction analysis and transmission electron microscopy. The band gap of the material is obtained by UV–visible absorption spectroscopy using Tauc relation. Dielectric properties of the sample have been investigated in the frequency range from 42 Hz to 1 MHz and in the temperature range from 303 K to 573 K. The dielectric relaxation peaks are observed in the frequency dependent dielectric loss spectra. The Cole–Cole model is used to explain the dielectric relaxation mechanism of the material. The complex impedance plane plot confirms the existence of both the grain and grain-boundary contribution to the relaxation. The temperature dependence of both grain and grain-boundary resistances follow the Arrhenius law with the activation energy of 0.427 and 0.431 eV respectively. The frequency-dependent conductivity spectra follow the power law.« less

Constraining Bulk Densities of Near-Earth Asteroid Surfaces from Radar Observations Using Laboratory Measurements of Permittivity

NASA Astrophysics Data System (ADS)

Hickson, D. C.; Boivin, A.; Daly, M. G.; Ghent, R. R.; Nolan, M. C.; Tait, K.; Cunje, A.; Tsai, C. A.

2017-12-01

Planetary radar is widely used to survey the Near-Earth Asteroid (NEA) population and can provide insight into target shapes, sizes, and spin states. The dual-polarization reflectivity is sensitive to surface roughness as well as material properties, specifically the real part of the complex permittivity, or dielectric constant. Knowledge of the behavior of the dielectric constant of asteroid regolith analogue material with environmental parameters can be used to inversely solve for such parameters, such as bulk density, from radar observations. In this study laboratory measurements of the complex permittivity of powdered aluminum oxide and dunite samples are performed in a low-pressure environment chamber using a coaxial transmission line from roughly 1 GHz to 8.5 GHz. The bulk densities of the samples are varied across the measurements by incrementally adding silica aerogel, a low-density material with a very low dielectric constant. This allows the alteration of the proportions of void space to solid particle grains to achieve microgravity-relevant porosities without significantly altering the dielectric properties of the powder sample. The data are then modeled using various electromagnetic mixing equations to characterize the change in dielectric constant with increasing volume fractions of void space (decreasing bulk density). Using spectral analogues as constraints on the composition of NEAs allows us to calculate the range in bulk densities in the near surface of NEAs that have been observed by planetary radar. Utilizing existing radar data from Arecibo Observatory we calculate the bulk density in the near-surface on (101955) Bennu, the target of NASA's OSIRIS-Rex mission, to be ρ = 1.27 ± 0.33 g cm-3 based on an average of the likely range in particle density and dielectric constant of the regolith material.

Electromagnetic properties of metal-dielectric media and their applications

NASA Astrophysics Data System (ADS)

Animilli, Shravan Rakesh

The main objective of this dissertation is to investigate nano-structured random composite materials, which exhibit anomalous phenomena, such as the extraordinary enhancements of linear and non-linear optical processes due to excitation of collective electronic states, surface plasmons (SP). The main goal is to develop a time and memory efficient novel numerical method to study the properties of these random media in three dimensions (3D) by utilization of multi core processing and packages such as MPI for parallel execution. The developed numerical studies are then utilized to provide a comprehensive characterization and optimization of a surface plasmon enhanced solar cell (SPESC) and to serve as a test bed for enhanced bio and chemical sensing. In this context, this thesis work develops an efficient and exact numerical algorithm here referred to as Block Elimination Method (BE) which provides the unique capability of modeling extremely large scale composite materials (with up to 1 million strongly interacting metal or dielectric particles). This capability is crucial in order to study the electromagnetic response of large scale inhomogeneous (fractal) films and bulk composites at critical concentrations (percolation). The developed numerical method is used to accurately estimate parameters that describe the composite materials, including the effective conductivity and correlation length scaling exponents, as well as density of states and localization length exponents at the band center. This works reveals, for a first time, a unique de-localization mechanism that plays an important role in the excitation of charge-density waves, i.e. surface plasmons (SP), in metal-dielectric composites. It also shows that in 3D metal-dielectric percolation systems the local fields distribution function for frequencies close to the single particle plasmon resonance is log-normal which is a signature of a metal-dielectric phase transition manifested in the optical response of the composites. Based on the obtained numerical data a scaling theory for the higher order electric field moments is developed. A distinct evidence of singularities in the surface plasmon density of states and localization length is obtained, correlating with results previously obtained for two dimensional systems. This leads to the main finding of this work; i.e., the delocalization of surface plasmon states in percolating metal-dielectric composite materials is universally present regardless of the dimensionality of the problem. This dissertation also proposes a new approach toward developing highly efficient inorganic/organic solar cell, by presenting a method for enhancement in the optical absorption and overall cell efficiency. Specifically, the approach improves the operation characteristics of inorganic semiconductor (e.g. Si and a-Si) and organic (P3HT:PCBM) thin film solar cells by integrating a thin, inhomogeneous, metal-dielectric composite (MDC) electrode at the interface between the transparent electrode and active layer. Through numerical simulations, we show that under solar illumination, surface plasmons are excited within the fractal MDC electrode across an extremely broad range of optical frequencies, trapping the incoming light and ensuring an optimal absorption into the active layer of the solar cells. An analytical model is developed to study the I-V characteristics of the cells, providing a pathway toward achieving optimal efficiency and better understanding of the behavior of charge carriers. Using this model, it is shown that including gold MDC electrodes can lead to an enhancement in solar cell power conversion efficiency up to 33% higher compared to the benchmark device.

Noncontact conductivity and dielectric measurement for high throughput roll-to-roll nanomanufacturing

NASA Astrophysics Data System (ADS)

Orloff, Nathan D.; Long, Christian J.; Obrzut, Jan; Maillaud, Laurent; Mirri, Francesca; Kole, Thomas P.; McMichael, Robert D.; Pasquali, Matteo; Stranick, Stephan J.; Alexander Liddle, J.

2015-11-01

Advances in roll-to-roll processing of graphene and carbon nanotubes have at last led to the continuous production of high-quality coatings and filaments, ushering in a wave of applications for flexible and wearable electronics, woven fabrics, and wires. These applications often require specific electrical properties, and hence precise control over material micro- and nanostructure. While such control can be achieved, in principle, by closed-loop processing methods, there are relatively few noncontact and nondestructive options for quantifying the electrical properties of materials on a moving web at the speed required in modern nanomanufacturing. Here, we demonstrate a noncontact microwave method for measuring the dielectric constant and conductivity (or geometry for samples of known dielectric properties) of materials in a millisecond. Such measurement times are compatible with current and future industrial needs, enabling real-time materials characterization and in-line control of processing variables without disrupting production.

Noncontact conductivity and dielectric measurement for high throughput roll-to-roll nanomanufacturing

PubMed Central

Orloff, Nathan D.; Long, Christian J.; Obrzut, Jan; Maillaud, Laurent; Mirri, Francesca; Kole, Thomas P.; McMichael, Robert D.; Pasquali, Matteo; Stranick, Stephan J.; Alexander Liddle, J.

2015-01-01

Advances in roll-to-roll processing of graphene and carbon nanotubes have at last led to the continuous production of high-quality coatings and filaments, ushering in a wave of applications for flexible and wearable electronics, woven fabrics, and wires. These applications often require specific electrical properties, and hence precise control over material micro- and nanostructure. While such control can be achieved, in principle, by closed-loop processing methods, there are relatively few noncontact and nondestructive options for quantifying the electrical properties of materials on a moving web at the speed required in modern nanomanufacturing. Here, we demonstrate a noncontact microwave method for measuring the dielectric constant and conductivity (or geometry for samples of known dielectric properties) of materials in a millisecond. Such measurement times are compatible with current and future industrial needs, enabling real-time materials characterization and in-line control of processing variables without disrupting production. PMID:26592441

Method for imaging liquid and dielectric materials with scanning polarization force microscopy

DOEpatents

Hu, Jun; Ogletree, D. Frank; Salmeron, Miguel; Xiao, Xudong

1999-01-01

The invention images dielectric polarization forces on surfaces induced by a charged scanning force microscope (SFM) probe tip. On insulators, the major contribution to the surface polarizability at low frequencies is from surface ions. The mobility of these ions depends strongly on the humidity. Using the inventive SFM, liquid films, droplets, and other weakly adsorbed materials have been imaged.

Apparatus for imaging liquid and dielectric materials with scanning polarization force microscopy

DOEpatents

Hu, Jun; Ogletree, D. Frank; Salmeron, Miguel; Xiao, Xudong

1998-01-01

The invention images dielectric polarization forces on surfaces induced by a charged scanning force microscope (SFM) probe tip. On insulators, the major contribution to the surface polarizability at low frequencies is from surface ions. The mobility of these ions depends strongly on the humidity. Using the inventive SFM, liquid films, droplets, and other weakly adsorbed materials have been imaged.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hidayat, Arif, E-mail: arif.hidayat.fmipa@um.ac.id; Latifah, Eny; Kurniati, Diana

This study investigated the influence of refraction index strength on the light propagation in refraction index-varied dielectric material. This dielectric material served as photonic lattice. The behavior of light propagation influenced by variation of refraction index in photonic lattice was investigated. Modes of the guiding light were determined numerically using squared-operator iteration method. It was found that the greater the strength of refraction index, the smaller the guiding modes.

Fully Printed Flexible and Stretchable Electronics

NASA Astrophysics Data System (ADS)

Zhang, Suoming

Through this thesis proposal, the author has demonstrated series of flexible or stretchable sensors including strain gauge, pressure sensors, display arrays, thin film transistors and photodetectors fabricated by a direct printing process. By adopting the novel serpentine configuration with conventional non-stretchable materials silver nanoparticles, the fully printed stretchable devices are successfully fabricated on elastomeric substrate with the demonstration of stretchable conductors that can maintain the electrical properties under strain and the strain gauge, which could be used to measure the strain in desired locations and also to monitor individual person's finger motion. And by investigating the intrinsic stretchable materials silver nanowires (AgNWs) with the conventional configuration, the fully printed stretchable conductors are achieved on various substrates including Si, glass, Polyimide, Polydimethylsiloxane (PDMS) and Very High Bond (VHB) tape with the illustration of the capacitive pressure sensor and stretchable electroluminescent displays. In addition, intrinsically stretchable thin-film transistors (TFTs) and integrated logic circuits are directly printed on elastomeric PDMS substrates. The printed devices utilize carbon nanotubes and a type of hybrid gate dielectric comprising PDMS and barium titanate (BaTiO3) nanoparticles. The BaTiO3/PDMS composite simultaneously provides high dielectric constant, superior stretchability, low leakage, as well as good printability and compatibility with the elastomeric substrate. Both TFTs and logic circuits can be stretched beyond 50% strain along either channel length or channel width directions for thousands of cycles while showing no significant degradation in electrical performance. Finally, by applying the SWNTs as the channel layer of the thin film transistor, we successfully fabricate the fully printed flexible photodetector which exhibits good electrical characteristics and the transistors exhibit good reliability under bending conditions owing to the ultrathin polyimide substrate as well as the superior mechanical flexibility of the gate dielectric and carbon nanotube network. Furthermore, we have demonstrated that by using two types of SWCNT samples with different optical absorption characteristics, the photoresponse exhibits unique wavelength selectivity, as manifested by the good correlation between the responsive wavelengths of the devices with the absorption peaks of the corresponding carbon nanotubes. All the proposed materials above together with the unique direct printing process may offer an entry into more sophisticated flexible or stretchable electronic systems with monolithically integrated sensors, actuators, and displays for real life applications.

Microstructure and electroluminescent performance of chemical vapor deposited zinc sulfide doped with manganese films for integration in thin film electroluminescent devices

NASA Astrophysics Data System (ADS)

Topol, Anna Wanda

Zinc sulfide (ZnS) doped with manganese (Mn), ZnS:Mn, is widely recognized as the brightest and most effective electroluminescent (EL) phosphor used in current thin film electroluminescent (TFEL) devices. ZnS acts as a host lattice for the luminescent activator, Mn, leading to a highly efficient yellow-orange EL emission, and resulting in a wide array of applications in monochrome, multi-color and full color displays. Although this wide band dap (3.7 eV) material can be prepared by several deposition techniques, the chemical vapor deposition (CVD) is the most promising for TFEL applications in terms of viable deposition rates, high thickness and composition uniformity, and excellent yield over large area panels. This study describes the development and optimization of a CVD ZnS:Mn process using diethylzinc [(C2H5)2Zn, DEZ], di-pi-cyclopentadienylmanganese [(C5H5)2Mn, CPMn], and hydrogen sulfide [H2S] as the chemical sources for, respectively, Zn, Mn, and S. The effects of key deposition parameters on resulting Film microstructure and performance are discussed, primarily in the context of identifying an optimized process window for best electroluminescence behavior. In particular, substrate temperature was observed to play a key role in the formation of high quality crystalline ZnS:Mn films leading to improved brightness and EL efficiency. Further investigations of the influence of temperature treatment on the structural characteristics and EL performance of the CVD ZnS:Mn film were carried out. In this study, the influence of post-deposition annealing both in-situ and ex-situ annealing processes, on chemical, structural, and electroluminescent characteristics of the phosphor layer are described. The material properties of the employed dielectric are among the key factors determining the performance, stability and reliability of the TFEL display and therefore, the choice of dielectric material for use in ACTFEL displays is crucial. In addition, the luminous efficiency depends on the density of the interface states and their depth at the insulator-phosphor interfaces. Hence, critical integration issues are discussed in terms of the incorporation of ZnS:Mn films in dielectricsemiconductor-dielectric (DSD) structures with silicon nitride (SiNx) and aluminum titanium oxide (ATO) as top and bottom insulators.

Determination of the reduced matrix of the piezoelectric, dielectric, and elastic material constants for a piezoelectric material with C∞ symmetry.

PubMed

Sherrit, Stewart; Masys, Tony J; Wiederick, Harvey D; Mukherjee, Binu K

2011-09-01

We present a procedure for determining the reduced piezoelectric, dielectric, and elastic coefficients for a C(∞) material, including losses, from a single disk sample. Measurements have been made on a Navy III lead zirconate titanate (PZT) ceramic sample and the reduced matrix of coefficients for this material is presented. In addition, we present the transform equations, in reduced matrix form, to other consistent material constant sets. We discuss the propagation of errors in going from one material data set to another and look at the limitations inherent in direct calculations of other useful coefficients from the data.

Parametric Dielectric Model of Comet Churyumov-Gerasimenko

NASA Astrophysics Data System (ADS)

Heggy, E.; Palmer, E. M.; Kofman, W. W.; Clifford, S. M.; Righter, K.; Herique, A.

2012-12-01

In 2014, the European Space Agency's Rosetta mission is scheduled to rendezvous with Comet 67P/Churyumov-Gerasimenko (Comet 67P). Rosetta's CONSERT experiment aims to explore the cometary nucleus' geophysical properties using radar tomography. The expected scientific return and inversion algorithms are mainly dependent on our understanding of the dielectric properties of the comet nucleus and how they vary with the spatial distribution of geophysical parameters. Using observations of comets 9P/Tempel 1 and 81P/Wild 2 in combination with dielectric laboratory measurements of temperature, porosity, and dust-to-ice mass ratio dependencies for cometary analog material, we have constructed two hypothetical three-dimensional parametric dielectric models of Comet 67P's nucleus to assess different dielectric scenarios of the inner structure. Our models suggest that dust-to-ice mass ratios and porosity variations generate the most significant measurable dielectric contrast inside the comet nucleus, making it possible to explore the structural and compositional hypotheses of cometary nuclei. Surface dielectric variations, resulting from temperature changes induced by solar illumination of the comet's faces, have also been modeled and suggest that the real part of the dielectric constant varies from 1.9 to 3.0, hence changing the surface radar reflectivity. For CONSERT, this variation could be significant at low incidence angles, when the signal propagates through a length of dust mantle comparable to the wavelength. The overall modeled dielectric permittivity spatial and temporal variations are therefore consistent with the expected deep penetration of CONSERT's transmitted wave through the nucleus. It is also clear that changes in the physical properties of the nucleus induce sufficient variation in the dielectric properties of cometary material to allow their inversion from radar tomography.

Silver (Ag)-Graphene oxide (GO) - Poly (vinylidene fluoride-co-hexafluoropropylene) (PVDF-HFP) nanostructured composites with high dielectric constant and low dielectric loss

NASA Astrophysics Data System (ADS)

Moharana, Srikanta; Mahaling, Ram Naresh

2017-07-01

The Silver (Ag)-Graphene oxide (GO)-Poly (vinylidene fluoride-co-hexafluoropropylene) (PVDF-HFP) composites were prepared by solution casting techniques and their dielectric properties were measured. Field emission scanning electron microscopy (FESEM) and X-ray analysis (XRD) confirmed that Ag layers were formed on the surface of the Graphene oxide sheets and homogeneously dispersed into the PVDF-HFP matrix. The result showed that the incorporation of Ag-GO nanoparticles greatly improved the dielectric constant value nearly about 65 at 100 Hz, which is comparatively much higher than that of pure PVDF-HFP. Furthermore, the dielectric loss of the composite remained at a low level (<0.1 at 100 Hz). A percolation threshold of 1.5 vol% of Ag-GO was calculated and explained accordingly. The composite having high dielectric constant and low dielectric loss might be used as dielectric materials for electronic capacitors.

A new quadrature annular resonator for 3 T MRI based on artificial-dielectrics.

PubMed

Mikhailovskaya, Anna A; Shchelokova, Alena V; Dobrykh, Dmitry A; Sushkov, Ivan V; Slobozhanyuk, Alexey P; Webb, Andrew

2018-06-01

Dielectric resonators have previously been constructed for ultra-high frequency magnetic resonance imaging and microscopy. However, it is challenging to design these dielectric resonators at clinical field strengths due to their intrinsically large dimensions, especially when using materials with moderate permittivity. Here we propose and characterize a novel approach using artificial-dielectrics which reduces substantially the required outer diameter of the resonator. For a resonator designed to operate in a 3 Tesla scanner using water as the dielectric, a reduction in outer diameter of 37% was achieved. When used in an inductively-coupled wireless mode, the sensitivity of the artificial-dielectric resonator was measured to be slightly higher than that of a standard dielectric resonator operating in its degenerate circularly-polarized hybrid electromagnetic modes (HEM 11 ). This study demonstrates the first application of an artificial-dielectric approach to MR volume coil design. Copyright © 2018 Elsevier Inc. All rights reserved.

A new quadrature annular resonator for 3 T MRI based on artificial-dielectrics

NASA Astrophysics Data System (ADS)

Mikhailovskaya, Anna A.; Shchelokova, Alena V.; Dobrykh, Dmitry A.; Sushkov, Ivan V.; Slobozhanyuk, Alexey P.; Webb, Andrew

2018-06-01

Dielectric resonators have previously been constructed for ultra-high frequency magnetic resonance imaging and microscopy. However, it is challenging to design these dielectric resonators at clinical field strengths due to their intrinsically large dimensions, especially when using materials with moderate permittivity. Here we propose and characterize a novel approach using artificial-dielectrics which reduces substantially the required outer diameter of the resonator. For a resonator designed to operate in a 3 Tesla scanner using water as the dielectric, a reduction in outer diameter of 37% was achieved. When used in an inductively-coupled wireless mode, the sensitivity of the artificial-dielectric resonator was measured to be slightly higher than that of a standard dielectric resonator operating in its degenerate circularly-polarized hybrid electromagnetic modes (HEM11). This study demonstrates the first application of an artificial-dielectric approach to MR volume coil design.

Self-monitoring high voltage transmission line suspension insulator

DOEpatents

Stemler, Gary E.; Scott, Donald N.

1981-01-01

A high voltage transmission line suspension insulator (18 or 22) which monitors its own dielectric integrity. A dielectric rod (10) has one larger diameter end fitting attachable to a transmission line and another larger diameter end fitting attachable to a support tower. The rod is enclosed in a dielectric tube (14) which is hermetically sealed to the rod's end fittings such that a liquidtight space (20) is formed between the rod and the tube. A pressurized dielectric liquid is placed within that space. A discoloring dye placed within this space is used to detect the loss of the pressurized liquid.

W-Band Transmission MeasurementS and X-Band Dielectric Properties Measurements for a Radome Material Sample

NASA Technical Reports Server (NTRS)

Cravey, Robin L.; Tiemsin, Pacita I.

1997-01-01

This paper describes measurements which were performed on a sample of radome material in the Electromagnetic Properties Measurements Laboratory (EPML). The purpose of the measurements described in this paper was to determine the one-way transmission loss through the flat panel of radome material for a frequency range of 84 to 94 GHz, for varying incidence angles. The panel, which was manufactured by Norton Performance Plastics Corporation, was provided to the EPML by TRW. The size of the panel is 40 in x 36 in x 0.422 in and consists of a foam material with one side coated with a smooth white coating (this side will be referred to as the front side). The dielectric properties of the foam material from the inside of the panel were also determined at X-band (8.2-12.4 GHz). The W-band free space measurements are presented first, followed by the X-band dielectric properties measurements.

Surface Flashover on Epoxy-Resin Printed Circuit Boards in Vacuum under Electron Irradiation

NASA Astrophysics Data System (ADS)

Fujii, Haruhisa; Hasegawa, Taketoshi; Osuga, Hiroyuki; Matsui, Katsuaki

This paper deals with the surface flashover characteristics of dielectric material in vacuum during electron beam irradiation in order to design adequately the conductive patterns on printed circuit boards used inside a spacecraft. The dielectric material, glass-fiber reinforced epoxy resin, and the electrodes printed on it were irradiated with electrons of the energy of 3-10 keV. DC high voltage was applied between the two electrodes during electron irradiation. The voltage was increased stepwise until the surface flashover occurred on the dielectric material. We obtained the results that the surface flashover voltage increased with the insulation distance between the electrodes but electron irradiation made the flashover voltage lower. The flashover voltage characteristics were obtained as parameters of the electrode distance and the energy of the electron beam.

Spectral characterization of dielectric materials using terahertz measurement systems

NASA Astrophysics Data System (ADS)

Seligman, Jeffrey M.

The performance of modern high frequency components and electronic systems are often limited by the properties of the materials from which they are made. Over the past decade, there has been an increased emphasis on the development of new, high performance dielectrics for use in high frequency systems. The development of these materials requires novel broadband characterization, instrumentation, and extraction techniques, from which models can be formulated. For this project several types of dielectric sheets were characterized at terahertz (THz) frequencies using quasi-optical (free-space) techniques. These measurement systems included a Fourier Transform Spectrometer (FTS, scalar), a Time Domain Spectrometer (TDS, vector), a Scalar Network Analyzer (SNA), and a THz Vector Network Analyzer (VNA). Using these instruments the THz spectral characteristics of dielectric samples were obtained. Polarization based anisotropy was observed in many of the materials measured using vector systems. The TDS was the most informative and flexible instrument for dielectric characterization at THz frequencies. To our knowledge, this is the first such comprehensive study to be performed. Anisotropy effects within materials that do not come into play at microwave frequencies (e.g. ~10 GHz) were found, in many cases, to increase measured losses at THz frequencies by up to an order of magnitude. The frequency dependent properties obtained during the course of this study included loss tangent, permittivity (index of refraction), and dielectric constant. The results were largely consistent between all the different systems and correlated closely to manufacturer specifications over a wide frequency range (325 GHz-1.5 THz). Anisotropic behavior was observed for some of the materials. Non-destructive evaluation and testing (NDE/NDT) techniques were used throughout. A precision test fixture was developed to accomplish these measurements. Time delay, insertion loss, and S-parameters were measured directly, from which loss tangent, index of refraction, and permittivity was extracted. The test materials were low-loss dielectric slabs ranging in thickness from 1-60 mils. The substrate sheets were PTFE, fiberglass, and epoxy-ceramic composite substrates. The other group was polyethylene plastic sheets (LDPE/HDPE/UMHW) and 3D printer Photopolymers. The results were verified by using several online THz spectral databases and compared to manufacturer data sheets. Permittivity and loss of some of the test samples varied as a function of polarization angle. 0 - 90 degrees of rotation were tested (i.e., H-V, and 45 degrees polarization). Inter-molecular scattering in the composite materials raised the loss considerably. This effect was verified. Standard, well documented, material types were selected for the project for best comparison. These techniques can also be applied to analyze newer substances such as nanodielectrics.

Periodic dielectric structure for production of photonic band gap and method for fabricating the same

DOEpatents

Ozbay, Ekmel; Tuttle, Gary; Michel, Erick; Ho, Kai-Ming; Biswas, Rana; Chan, Che-Ting; Soukoulis, Costas

1995-01-01

A method for fabricating a periodic dielectric structure which exhibits a photonic band gap. Alignment holes are formed in a wafer of dielectric material having a given crystal orientation. A planar layer of elongate rods is then formed in a section of the wafer. The formation of the rods includes the step of selectively removing the dielectric material of the wafer between the rods. The formation of alignment holes and layers of elongate rods and wafers is then repeated to form a plurality of patterned wafers. A stack of patterned wafers is then formed by rotating each successive wafer with respect to the next-previous wafer, and then placing the successive wafer on the stack. This stacking results in a stack of patterned wafers having a four-layer periodicity exhibiting a photonic band gap.

Tungsten-doped thin film materials

DOEpatents

Xiang, Xiao-Dong; Chang, Hauyee; Gao, Chen; Takeuchi, Ichiro; Schultz, Peter G.

2003-12-09

A dielectric thin film material for high frequency use, including use as a capacitor, and having a low dielectric loss factor is provided, the film comprising a composition of tungsten-doped barium strontium titanate of the general formula (Ba.sub.x Sr.sub.1-x)TiO.sub.3, where X is between about 0.5 and about 1.0. Also provided is a method for making a dielectric thin film of the general formula (Ba.sub.x Sr.sub.1-x)TiO.sub.3 and doped with W, where X is between about 0.5 and about 1.0, a substrate is provided, TiO.sub.2, the W dopant, Ba, and optionally Sr are deposited on the substrate, and the substrate containing TiO.sub.2, the W dopant, Ba, and optionally Sr is heated to form a low loss dielectric thin film.