Infiltration of CdTe nano crystals into a ZnO wire vertical matrix by using the isothermal closed space technique

NASA Astrophysics Data System (ADS)

Larramendi, S.; Vaillant Roca, Lidice; Saint-Gregoire, Pierre; Ferraz Dias, Johnny; Behar, Moni

2017-10-01

A ZnO nanorod structure was grown by the hydrothermal method and interpenetrated with CdTe using the isothermal closed space sublimation technique. The obtained structure was studied by using the Rutherford backscattering spectrometry (RBS), Scanning Electron Microscopy (SEM), High Resolution Transmission Electron Microscopy (HRTEM). The X-ray Diffraction (XRD) technique confirmed the presence of CdTe nanocrystals (NCs) of very small size formed on the surface and in the interspaces between the ZnO nanorods. The RBS observations together with the SEM observations give information on the obtained structure. Finally the photoluminescence studies show a strong energy confinement effect on the grown CdTe NCs.

Structural and optical studies of nitrogen incorporation into GaSb-based GaInSb quantum wells

NASA Astrophysics Data System (ADS)

Nair, Hari P.; Crook, Adam M.; Yu, Kin M.; Bank, Seth R.

2012-01-01

We investigate the incorporation of nitrogen into (Ga,In)Sb grown on GaSb and report room temperature photoluminescence from GaInSb(N) quantum wells. X-ray diffraction and channeling nuclear reaction analysis, together with Rutherford backscattering, were employed to identify the optimal molecular beam epitaxial growth conditions that minimized the incorporation of non-substitutional nitrogen into GaNSb. Consistent with this hypothesis, GaInSb(N) quantum wells grown under the conditions that minimized non-substitutional nitrogen exhibited room temperature photoluminescence, indicative of significantly improved radiative efficiency. Further development of this material system could enable type-I laser diodes emitting throughout the (3-5 μm) wavelength range.

OMVPE Growth of Quaternary (Al,Ga,In)N for UV Optoelectronics (title change from A)

DOE Office of Scientific and Technical Information (OSTI.GOV)

HAN,JUNG; FIGIEL,JEFFREY J.; PETERSEN,GARY A.

We report the growth and characterization of quaternary AlGaInN. A combination of photoluminescence (PL), high-resolution x-ray diffraction (XRD), and Rutherford backscattering spectrometry (RBS) characterizations enables us to explore the contours of constant PL peak energy and lattice parameter as functions of the quaternary compositions. The observation of room temperature PL emission at 351nm (with 20% Al and 5% In) renders initial evidence that the quaternary could be used to provide confinement for GaInN (and possibly GaN). AlGaInN/GrdnN MQW heterostructures have been grown; both XRD and PL measurements suggest the possibility of incorporating this quaternary into optoelectronic devices.

Amorphous silicon carbide coatings for extreme ultraviolet optics

NASA Technical Reports Server (NTRS)

Kortright, J. B.; Windt, David L.

1988-01-01

Amorphous silicon carbide films formed by sputtering techniques are shown to have high reflectance in the extreme ultraviolet spectral region. X-ray scattering verifies that the atomic arrangements in these films are amorphous, while Auger electron spectroscopy and Rutherford backscattering spectroscopy show that the films have composition close to stoichiometric SiC, although slightly C-rich, with low impurity levels. Reflectance vs incidence angle measurements from 24 to 1216 A were used to derive optical constants of this material, which are presented here. Additionally, the measured extreme ultraviolet efficiency of a diffraction grating overcoated with sputtered amorphous silicon carbide is presented, demonstrating the feasibility of using these films as coatings for EUV optics.

Study of cerium diffusion in undoped lithium-6 enriched glass with Rutherford backscattering spectrometry

NASA Astrophysics Data System (ADS)

Zhang, Xiaodong; Moore, Michael E.; Lee, Kyung-Min; Lukosi, Eric D.; Hayward, Jason P.

2016-07-01

Undoped lithium-6 enriched glasses coated with pure cerium (99.9%) with a gold protection layer on top were heated at three different temperatures (500, 550, and 600 °C) for varied durations (1, 2, and 4 h). Diffusion profiles of cerium in such glasses were obtained with the conventional Rutherford backscattering technique. Through fitting the diffusion profiles with the thin-film solution of Fick's second law, diffusion coefficients of cerium with different annealing temperatures and durations were solved. Then, the activation energy of cerium for the diffusion process in the studied glasses was found to be 114 kJ/mol with the Arrhenius equation.

A Strange Box and a Stubborn Brit: Rutherford's Experiments with Alpha Particles.

ERIC Educational Resources Information Center

Digilov, M.

1991-01-01

Discusses 5 innovative experiments conducted by Rutherford in early 1900s utilizing the 30 milligrams of radium salt he personally carried from Europe to Canada in 1903. Traces his work with alpha particles from his original results which determined their nature, charge, and mass, to his technique of backscattering which helped to advance…

RBS Depth Profiling Analysis of (Ti, Al)N/MoN and CrN/MoN Multilayers.

PubMed

Han, Bin; Wang, Zesong; Devi, Neena; Kondamareddy, K K; Wang, Zhenguo; Li, Na; Zuo, Wenbin; Fu, Dejun; Liu, Chuansheng

2017-12-01

(Ti, Al)N/MoN and CrN/MoN multilayered films were synthesized on Si (100) surface by multi-cathodic arc ion plating system with various bilayer periods. The elemental composition and depth profiling of the films were investigated by Rutherford backscattering spectroscopy (RBS) using 2.42 and 1.52 MeV Li 2+ ion beams and different incident angles (0°, 15°, 37°, and 53°). The microstructures of (Ti, Al)N/MoN multilayered films were evaluated by X-ray diffraction. The multilayer periods and thickness of the multilayered films were characterized by scanning electron microscopy (SEM) and high-resolution transmission electron microscopy (HR-TEM) and then compared with RBS results.

Growth and properties of GaSbBi alloys

NASA Astrophysics Data System (ADS)

Rajpalke, M. K.; Linhart, W. M.; Birkett, M.; Yu, K. M.; Scanlon, D. O.; Buckeridge, J.; Jones, T. S.; Ashwin, M. J.; Veal, T. D.

2013-09-01

Molecular-beam epitaxy has been used to grow GaSb1-xBix alloys with x up to 0.05. The Bi content, lattice expansion, and film thickness were determined by Rutherford backscattering and x-ray diffraction, which also indicate high crystallinity and that >98% of the Bi atoms are substitutional. The observed Bi-induced lattice dilation is consistent with density functional theory calculations. Optical absorption measurements and valence band anticrossing modeling indicate that the room temperature band gap varies from 720 meV for GaSb to 540 meV for GaSb0.95Bi0.05, corresponding to a reduction of 36 meV/%Bi or 210 meV per 0.01 Å change in lattice constant.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wendav, Torsten, E-mail: wendav@physik.hu-berlin.de; Fischer, Inga A.; Oehme, Michael

The group-IV semiconductor alloy Ge{sub 1−x−y}Si{sub x}Sn{sub y} has recently attracted great interest due to its prospective potential for use in optoelectronics, electronics, and photovoltaics. Here, we investigate molecular beam epitaxy grown Ge{sub 1−x−y}Si{sub x}Sn{sub y} alloys lattice-matched to Ge with large Si and Sn concentrations of up to 42% and 10%, respectively. The samples were characterized in detail by Rutherford backscattering/channeling spectroscopy for composition and crystal quality, x-ray diffraction for strain determination, and photoluminescence spectroscopy for the assessment of band-gap energies. Moreover, the experimentally extracted material parameters were used to determine the SiSn bowing and to make predictions aboutmore » the optical transition energy.« less

Auger electron spectroscopy and Rutherford backscattering studies of copper in 2024-T3 aluminum following electrochemical anodization in phosphoric acid

NASA Astrophysics Data System (ADS)

Solomon, J. S.

1981-05-01

The effects of the electrochemical anodization of dioxidized 2024-T3 aluminum on copper were characterized by Auger electron spectroscopy and Rutherford backscattering. Anodization was performed in phosphoric acid at constant potential. Data is presented which shows that constant potential anodization of 2024-T3 is more efficient than aluminum in terms of oxide growth rates for short anodization times. However the maximum anodic oxide thickness achievable on the alloy is less than the pure metal. Copper is shown to be enriched at the oxide metal interface because of its diffusion from the bulk during anodization. The presence of copper at the oxide-metal interface is shown to affect oxide morphology.

Effect Of Chromium Underlayer On The Properties Of Nano-Crystalline Diamond Films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Garratt, Elias; AlFaify, Salem; Yoshitake, T.

2013-01-11

This paper investigated the effect of chromium underlayer on the structure, microstructure and composition of the nano-crystalline diamond films. Nano-crystalline diamond thin films were deposited at high temperature in microwave-induced plasma diluted with nitrogen, on silicon substrate with a thin film of chromium as an underlayer. The composition, structure and microstructure of the deposited layers were analyzed using non-Rutherford Backscattering Spectrometry, Raman Spectroscopy, Near-Edge X-Ray Absorption Fine Structure, X-ray Diffraction and Atomic Force Microscopy. Nanoindentation studies showed that the films deposited on chromium underlayer have higher hardness values compared to those deposited on silicon without an underlayer. Diamond and graphiticmore » phases of the films evaluated by x-ray and optical spectroscopic analysis determined consistency between sp2 and sp3 phases of carbon in chromium sample to that of diamond grown on silicon. Diffusion of chromium was observed using ion beam analysis which was correlated with the formation of chromium complexes by x-ray diffraction.« less

Effect of chromium underlayer on the properties of nano-crystalline diamond films

NASA Astrophysics Data System (ADS)

Garratt, E.; AlFaify, S.; Yoshitake, T.; Katamune, Y.; Bowden, M.; Nandasiri, M.; Ghantasala, M.; Mancini, D. C.; Thevuthasan, S.; Kayani, A.

2013-01-01

This paper investigated the effect of chromium underlayer on the structure, microstructure, and composition of the nano-crystalline diamond films. Nano-crystalline diamond thin films were deposited at high temperature in microwave-induced plasma diluted with nitrogen, on single crystal silicon substrate with a thin film of chromium as an underlayer. Characterization of the film was implemented using non-Rutherford backscattering spectrometry, Raman spectroscopy, near-edge x-ray absorption fine structure, x-ray diffraction, and atomic force microscopy. Nanoindentation studies showed that the films deposited on chromium underlayer have higher hardness values compared to those deposited on silicon without an underlayer. Diamond and graphitic phases of the films evaluated by x-ray and optical spectroscopic analyses determined consistency between the sp2 and sp3 phases of carbon in chromium sample to that of diamond grown on silicon. Diffusion of chromium was observed using ion beam analysis which was correlated with the formation of chromium complexes by x-ray diffraction.

Ion channeling studies on mixed phases formed in metalorganic chemical vapor deposition grown Mg-doped GaN on Al2O3(0001)

NASA Astrophysics Data System (ADS)

Sundaravel, B.; Luo, E. Z.; Xu, J. B.; Wilson, I. H.; Fong, W. K.; Wang, L. S.; Surya, C.

2000-01-01

Rutherford backscattering spectrometry and ion channeling were used to determine the relative quantities of wurtzite and zinc-blende phases in metalorganic chemical vapor deposition grown Mg-doped GaN(0001) on an Al2O3(0001) substrate with a GaN buffer layer. Offnormal axial channeling scans were used. High-resolution x-ray diffraction measurements also confirmed the presence of mixed phases. The in-plane orientation was found to be GaN[11¯0]‖GaN[112¯0]‖Al2O3[112¯0]. The effects of rapid thermal annealing on the relative phase content, thickness and crystalline quality of the GaN epilayer were also studied.

Modified Bridgman-Stockbarger growth and characterization of LiInSe{sub 2} single crystal

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vijayakumar, P., E-mail: ramasamyp@ssn.edu.in; Magesh, M., E-mail: ramasamyp@ssn.edu.in; Arunkumar, A., E-mail: ramasamyp@ssn.edu.in

2014-04-24

The LiInSe{sub 2} polycrystalline materials were successfully synthesized from melt and temperature oscillation method. 8 mm diameter and 32 mm length single crystal was grown from Bridgman-Stockbarger method with steady ampoule rotation. Crystalline phase was confirmed by powder XRD pattern. Thermo gravimetric and differential thermal analysis confirms that the melting point of the grown crystal is 897°C. Rutherford backscattering analysis (RBS) gives the crystal composition as Li{sub 0.8}In{sub 1.16}Se{sub 2.04}. The crystalline perfection of the grown crystal was analyzed by High resolution X-ray diffraction measurements (HRXRD). The electrical properties of the grown crystal were analyzed by Hall effect measurements andmore » it confirms the n-type semiconducting nature.« less

Effect of growth rate on crystallization of HfO{sub 2} thin films deposited by RF magnetron sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dhanunjaya, M.; Manikanthababu, N.; Pathak, A. P.

2016-05-23

Hafnium oxide (HfO{sub 2}) is the potentially useful dielectric material in both; electronics to replace the conventional SiO{sub 2} as gate dielectric and in Optics as anti-reflection coating material. In this present work we have synthesized polycrystalline HfO{sub 2} thin films by RF magnetron sputtering deposition technique with varying target to substrate distance. The deposited films were characterized by X-ray Diffraction, Rutherford Backscattering Spectrometry (RBS) and transmission and Reflection (T&R) measurements to study the growth behavior, microstructure and optical properties. XRD measurement shows that the samples having mixed phase of monoclinic, cubic and tetragonal crystal structure. RBS measurements suggest themore » formation of Inter Layer (IL) in between Substrate and film.« less

Enhancement of photoluminescence intensity of GaAs with cubic GaS chemical vapor deposited using a structurally designed single-source precursor

NASA Technical Reports Server (NTRS)

Macinnes, Andrew N.; Power, Michael B.; Barron, Andrew R.; Jenkins, Phillip P.; Hepp, Aloysius F.

1993-01-01

A two order-of-magnitude enhancement of photoluminescence intensity relative to untreated GaAs has been observed for GaAs surfaces coated with chemical vapor-deposited GaS. The increase in photoluminescence intensity can be viewed as an effective reduction in surface recombination velocity and/or band bending. The gallium cluster /(t-Bu)GaS/4 was used as a single-source precursor for the deposition of GaS thin films. The cubane core of the structurally characterized precursor is retained in the deposited film producing a cubic phase. Furthermore, a near-epitaxial growth is observed for the GaS passivating layer. Films were characterized by transmission electron microscopy, X-ray powder diffraction, and X-ray photoelectron and Rutherford backscattering spectroscopies.

Photoluminescence intensity enhancement of GaAs by vapor-deposited GaS - A rational approach to surface passivation

NASA Technical Reports Server (NTRS)

Jenkins, Phillip P.; Hepp, Aloysius F.; Power, Michael B.; Macinnes, Andrew N.; Barron, Andrew R.

1993-01-01

A two order-of-magnitude enhancement of photoluminescence intensity relative to untreated GaAs has been observed for GaAs surfaces coated with chemical vapor-deposited GaS. The increase in photoluminescence intensity can be viewed as an effective reduction in surface recombination velocity and/or band bending. The gallium cluster (/t-Bu/GaS)4 was used as a single-source precursor for the deposition of GaS thin films. The cubane core of the structurally-characterized precursor is retained in the deposited film producing a cubic phase. Furthermore, a near-epitaxial growth is observed for the GaS passivating layer. Films were characterized by transmission electron microscopy, X-ray powder diffraction, and X-ray photoelectron and Rutherford backscattering spectroscopies.

Measurement Of Hydrogen Capacities And Stability In Thin Films Of AlH Deposited By Magnetron Sputtering

NASA Astrophysics Data System (ADS)

Dissanayake, A.; AlFaify, S.; Garratt, E.; Nandasiri, M. I.; Taibu, R.; Tecos, G.; Hamdan, N. M.; Kayani, A.

2011-06-01

Thin, hydrogenated aluminum hydride films were deposited on silicon substrates using unbalanced magnetron (UBM) sputtering of a high purity aluminum target under electrically grounded conditions. Argon was used as sputtering gas and hydrogenation was carried out by diluting the growth plasma with hydrogen. The effect of hydrogen partial pressure on the final concentration of trapped elements including hydrogen has been studied using ion beam analysis (IBA) techniques. Moreover, in-situ thermal stability of trapped hydrogen in the film was carried out using Rutherford Backscattering Spectrometry (RBS), Non-Rutherford Backscattering Spectrometry (NRBS) and Elastic Recoil Detection Analysis (ERDA). Microstructure of the film was investigated by SEM analysis. Hydrogen content in the thin films was found decreasing as the films were heated above 110 °C in vacuum.

Rutherford forward scattering and elastic recoil detection (RFSERD) as a method for characterizing ultra-thin films

DOE PAGES

Lohn, Andrew J.; Doyle, Barney L.; Stein, Gregory J.; ...

2014-04-03

We present a novel ion beam analysis technique combining Rutherford forward scattering and elastic recoil detection (RFSERD) and demonstrate its ability to increase efficiency in determining stoichiometry in ultrathin (5-50 nm) films as compared to Rutherford backscattering. In the conventional forward geometries, scattering from the substrate overwhelms the signal from light atoms but in RFSERD, scattered ions from the substrate are ranged out while forward scattered ions and recoiled atoms from the thin film are simultaneously detected in a single detector. Lastly, the technique is applied to tantalum oxide memristors but can be extended to a wide range of materialsmore » systems.« less

Structure of the Global Nanoscience and Nanotechnology Research Literature

DTIC Science & Technology

2006-01-01

Transistors, Nature, 424 (6949): 654-657, 2003. Joannopoulos, JD, Meade, RD, Winn, JN, Photonic Crystals: Molding the Flow of Light, Princeton...1.27 Force Microscopy 40 0.10 0.00 Electron Spectroscopy 40 0.10 0.00 Rutherford backscattering spectrometry 38 0.10 0.00 flow cytometry 36 0.09...Backscattering Spectroscopy/Spectrometry • Flow Cytometry • Spectrophotometry (UV-Visible) • Deep Level Transient Spectroscopy • Inductively

The growth of high-Al-content InAlGaN quaternary alloys by RF-MBE

NASA Astrophysics Data System (ADS)

Wang, B. Z.; Wang, X. L.; Wang, X. Y.; Guo, L. C.; Wang, X. H.; Xiao, H. L.; Liu, H. X.

2007-02-01

High-Al-content InxAlyGa1-x-yN (x = 1-10%, y = 34-45%) quaternary alloys were grown on sapphire by radio-frequency plasma-excited molecular beam epitaxy. Rutherford back-scattering spectrometry, high resolution x-ray diffraction and cathodoluminescence were used to characterize the InAlGaN alloys. The experimental results show that InAlGaN with an appropriate Al/In ratio (near 4.7, which is a lattice-match to the GaN under-layer) has better crystal and optical quality than the InAlGaN alloys whose Al/In ratios are far from 4.7. Some cracks and V-defects occur in high-Al/In-ratio InAlGaN alloys. In the CL image, the cracks and V-defect regions are the emission-enhanced regions.

Irradiation induced formation of VN in CrN thin films

NASA Astrophysics Data System (ADS)

Novaković, M.; Popović, M.; Zhang, K.; Mitrić, M.; Bibić, N.

2015-09-01

Reactively sputtered CrN layer, deposited on Si(1 0 0) wafer, was implanted at room temperature with 80-keV V+ ions to the fluence of 2 × 1017 ions/cm2. After implantation the sample was annealed in a vacuum, for 2 h at 700 °C. The microstructure and chemical composition of CrN films was investigated using Rutherford backscattering spectroscopy, X-ray photoelectron spectroscopy, X-ray diffraction and cross-sectional transmission electron microscopy (conventional and high-resolution), together with fast Fourier transformation analyses. It was found that vanadium atoms are distributed in the sub-surface region of CrN layer, with the maximum concentration at ∼20 nm. After annealing the formation of VN nanoparticles was observed. The nanoparticles are spherical shaped with a size of 8-20 nm in diameter.

Composition, nanostructure, and optical properties of silver and silver-copper lusters

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pradell, Trinitat; Pavlov, Radostin S.; Carolina Gutierrez, Patricia

2012-09-01

Lusters are composite thin layers of coinage metal nanoparticles in glass displaying peculiar optical properties and obtained by a process involving ionic exchange, diffusion, and crystallization. In particular, the origin of the high reflectance (golden-shine) shown by those layers has been subject of some discussion. It has been attributed to either the presence of larger particles, thinner multiple layers or higher volume fraction of nanoparticles. The object of this paper is to clarify this for which a set of laboratory designed lusters are analysed by Rutherford backscattering spectroscopy, transmission electron microscopy, x-ray diffraction, and ultraviolet-visible spectroscopy. Model calculations and numericalmore » simulations using the finite difference time domain method were also performed to evaluate the optical properties. Finally, the correlation between synthesis conditions, nanostructure, and optical properties is obtained for these materials.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mbamara, U. S.; Olofinjana, B.; Ajayi, O. O.

Most researches on doped ZnO thin films are tilted toward their applications in optoelectronics and semiconductor devices. Research on their tribological properties is still unfolding. In this work, nitrogen-doped ZnO thin films were deposited on 304 L stainless steel substrate from a combination of zinc acetate and ammonium acetate precursor by MOCVD technique. Compositional and structural studies of the films were done using Rutherford Backscattering Spectroscopy (RBS) and X-ray Diffraction (XRD). The frictional behavior of the thin film coatings was evaluated using a ball-on-flat configuration in reciprocating sliding under dry contact condition. After friction test, the flat and ball counter-facemore » surfaces were examined to assess the wear dimension and failure mechanism. In conclusion, both friction behavior and wear (in the ball counter-face) were observed to be dependent on the crystallinity and thickness of the thin film coatings.« less

Cyclic voltammetry on sputter-deposited films of electrochromic Ni oxide: Power-law decay of the charge density exchange

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wen, Rui-Tao, E-mail: Ruitao.Wen@angstrom.uu.se; Granqvist, Claes G.; Niklasson, Gunnar A.

2014-10-20

Ni-oxide-based thin films were produced by reactive direct-current magnetron sputtering and were characterized by X-ray diffraction and Rutherford backscattering spectroscopy. Intercalation of Li{sup +} ions was accomplished by cyclic voltammetry (CV) in an electrolyte of LiClO{sub 4} in propylene carbonate, and electrochromism was documented by spectrophotometry. The charge density exchange, and hence the optical modulation span, decayed gradually upon repeated cycling. This phenomenon was accurately described by an empirical power law, which was valid for at least 10{sup 4} cycles when the applied voltage was limited to 4.1 V vs Li/Li{sup +}. Our results allow lifetime assessments for one of themore » essential components in an electrochromic device such as a “smart window” for energy-efficient buildings.« less

Atomic level characterization of cadmium selenide nanocrystal systems using atomic number contrast scanning transmission electron microscopy and Rutherford backscattering spectroscopy

NASA Astrophysics Data System (ADS)

McBride, James R.

This project involved the characterization of CdSe nanocrystals. Through the use of Atomic Number Contrast Scanning Transmission Electron Microscopy (Z-STEM) and Rutherford Backscattering Spectroscopy (RBS), atomic level structure and chemical information was obtained. Specifically, CdSe nanocrystals produced using a mixture of hexadecylamine (HDA) and trioctylphosphine oxide (TOPO) were determined to be spherical compared to nanocrystals produced in TOPO only, which had elongated (101) facets. Additionally, the first Z-STEM images of CdSe/ZnS core/shell nanocrystals were obtained. From these images, the growth mechanism of the ZnS shell was determined and the existence of non-fluorescent ZnS particles was confirmed. Through collaboration with Quantum Dot Corp., core/shell nanocrystals with near unity quantum yield were developed. These core/shell nanocrystals included a US intermediate layer to improve shell coverage.

Compositional analysis of ultrananocrystalline diamond (UNCD) films using ion beam scattering

NASA Astrophysics Data System (ADS)

AlFaify, S.; Garratt, E.; Nandasiri, M. I.; Kayani, A.; Sumant, A. V.; Mancini, D. C.

2009-11-01

Determination of the elemental composition is important to correlate the electrical and the optical properties of ultrananocrystalline diamond (UNCD) films, doped with and without nitrogen. To obtain the complete picture of impurities in the UNCD thin films, Rutherford backscattering spectroscopy (RBS), Non-Rutherford backscattering spectroscopy (NRBS), Elastic recoil detection analysis (ERDA) and nuclear reaction analysis (NRA) were performed on UNCD films on Si substrate and on free standing films. Helium beam was used for RBS and ERDA and protons were used for NRBS measurements. Exploiting the nuclear reaction of deuterons with C, O and N, 1.1 MeV D+ beam was used to quantitatively measure the concentration of these elements. Our results show that UNCD films contain less than 3% of Hydrogen while Nitrogen content incorporated in the film was estimated to be lower than 1%. The intermixing region between the substrate and the film was found to be negligible.

Bi-induced band gap reduction in epitaxial InSbBi alloys

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rajpalke, M. K.; Linhart, W. M.; Yu, K. M.

2014-11-24

The properties of molecular beam epitaxy-grown InSb 1-x Bi x alloys are investigated. Rutherford backscattering spectrometry shows that the Bi content increases from 0.6% for growth at 350 °C to 2.4% at 200 °C. X-ray diffraction indicates Bi-induced lattice dilation and suggests a zinc-blende InBi lattice parameter of 6.626 Å. Scanning electron microscopy reveals surface InSbBi nanostructures on the InSbBi films for the lowest growth temperatures, Bi droplets at intermediate temperatures, and smooth surfaces for the highest temperature. The room temperature optical absorption edge was found to change from 172 meV (7.2 μm) for InSb to ~88 meV (14.1 μm)more » for InSb 0.976Bi 0.024, a reduction of ~35 meV/%Bi.« less

Heavy doping of CdTe single crystals by Cr ion implantation

NASA Astrophysics Data System (ADS)

Popovych, Volodymyr D.; Böttger, Roman; Heller, Rene; Zhou, Shengqiang; Bester, Mariusz; Cieniek, Bogumil; Mroczka, Robert; Lopucki, Rafal; Sagan, Piotr; Kuzma, Marian

2018-03-01

Implantation of bulk CdTe single crystals with high fluences of 500 keV Cr+ ions was performed to achieve Cr concentration above the equilibrium solubility limit of this element in CdTe lattice. The structure and composition of the implanted samples were studied using secondary ion mass spectrometry (SIMS), scanning electron microscopy (SEM), energy dispersive X-ray (EDX) analysis, X-ray diffraction (XRD) and Rutherford backscattering spectrometry (RBS) to characterize the incorporation of chromium into the host lattice and to investigate irradiation-induced damage build-up. It was found that out-diffusion of Cr atoms and sputtering of the targets alter the depth distribution and limit concentration of the projectile ions in the as-implanted samples. Appearance of crystallographically oriented, metallic α-Cr nanoparticles inside CdTe matrix was found after implantation, as well as a strong disorder at the depth far beyond the projected range of the implanted ions.

Microstructural and opto-electrical properties of chromium nitride films implanted with vanadium ions

NASA Astrophysics Data System (ADS)

Novaković, M.; Traverse, A.; Popović, M.; Lieb, K. P.; Zhang, K.; Bibić, N.

2012-07-01

We report on modifications of 280-nm thin polycrystalline CrN layers caused by vanadium ion implantation. The CrN layers were deposited at 150°C by d.c. reactive sputtering on Si(100) wafers and then implanted at room temperature with 80-keV V+ ions to fluences of 1×1017 and 2×1017 ions/cm2. Rutherford backscattering spectroscopy, cross-sectional transmission electron microscopy, and X-ray diffraction were used to characterize changes in the structural properties of the films. Their optical and electrical properties were analyzed by infrared spectroscopy in reflection mode and electrical resistivity measurements. CrN was found to keep its cubic structure under the conditions of vanadium ion implantation used here. The initially partially non-metallic CrN layer displays metallic character under implantation, which may be related to the possible formation of Cr1-x V x N.

Elevated transition temperature in Ge doped VO2 thin films

NASA Astrophysics Data System (ADS)

Krammer, Anna; Magrez, Arnaud; Vitale, Wolfgang A.; Mocny, Piotr; Jeanneret, Patrick; Guibert, Edouard; Whitlow, Harry J.; Ionescu, Adrian M.; Schüler, Andreas

2017-07-01

Thermochromic GexV1-xO2+y thin films have been deposited on Si (100) substrates by means of reactive magnetron sputtering. The films were then characterized by Rutherford backscattering spectrometry (RBS), four-point probe electrical resistivity measurements, X-ray diffraction, and atomic force microscopy. From the temperature dependent resistivity measurements, the effect of Ge doping on the semiconductor-to-metal phase transition in vanadium oxide thin films was investigated. The transition temperature was shown to increase significantly upon Ge doping (˜95 °C), while the hysteresis width and resistivity contrast gradually decreased. The precise Ge concentration and the film thickness have been determined by RBS. The crystallinity of phase-pure VO2 monoclinic films was confirmed by XRD. These findings make the use of vanadium dioxide thin films in solar and electronic device applications—where higher critical temperatures than 68 °C of pristine VO2 are needed—a viable and promising solution.

Synthesis and annealing study of RF sputtered ZnO thin film

DOE Office of Scientific and Technical Information (OSTI.GOV)

Singh, Shushant Kumar, E-mail: singhshushant86@gmail.com; Sharma, Himanshu; Singhal, R.

2016-05-23

In this paper, we have investigated the annealing effect on optical and structural properties of ZnO thin films, synthesized by RF magnetron sputtering. ZnO thin films were deposited on glass and silicon substrates simultaneously at a substrate temperature of 300 °C using Argon gas in sputtering chamber. Thickness of as deposited ZnO thin film was found to be ~155 nm, calculated by Rutherford backscattering spectroscopy (RBS). These films were annealed at 400 °C and 500 °C temperature in the continuous flow of oxygen gas for 1 hour in tube furnace. X-ray diffraction analysis confirmed the formation of hexagonal wurtzite structuremore » of ZnO thin film along the c-axis (002) orientation. Transmittance of thin films was increased with increasing the annealing temperature estimated by UV-visible transmission spectroscopy. Quality and texture of the thin films were improved with annealing temperature, estimated by Raman spectroscopy.« less

Tungsten nitride coatings obtained by HiPIMS as plasma facing materials for fusion applications

NASA Astrophysics Data System (ADS)

Tiron, Vasile; Velicu, Ioana-Laura; Porosnicu, Corneliu; Burducea, Ion; Dinca, Paul; Malinský, Petr

2017-09-01

In this work, tungsten nitride coatings with nitrogen content in the range of 19-50 at% were prepared by reactive multi-pulse high power impulse magnetron sputtering as a function of the argon and nitrogen mixture and further exposed to a deuterium plasma jet. The elemental composition, morphological properties and physical structure of the samples were investigated by Rutherford backscattering spectrometry, atomic force microscopy and X-ray diffraction. Deuterium implantation was performed using a deuterium plasma jet and its retention in nitrogen containing tungsten films was investigated using thermal desorption spectrometry. Deuterium retention and release behaviour strongly depend on the nitrogen content in the coatings and the films microstructure. All nitride coatings have a polycrystalline structure and retain a lower deuterium level than the pure tungsten sample. Nitrogen content in the films acts as a diffusion barrier for deuterium and leads to a higher desorption temperature, therefore to a higher binding energy.

Study of the amorphization of surface silicon layers implanted by low-energy helium ions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lomov, A. A., E-mail: lomov@ftian.ru; Myakon’kikh, A. V.; Oreshko, A. P.

2016-03-15

The structural changes in surface layers of Si(001) substrates subjected to plasma-immersion implantation by (2–5)-keV helium ions to a dose of D = 6 × 10{sup 15}–5 × 10{sup 17} cm{sup –2} have been studied by highresolution X-ray diffraction, Rutherford backscattering, and spectral ellipsometry. It is found that the joint application of these methods makes it possible to determine the density depth distribution ρ(z) in an implanted layer, its phase state, and elemental composition. Treatment of silicon substrates in helium plasma to doses of 6 × 10{sup 16} cm{sup –2} leads to the formation of a 20- to 30-nm-thick amorphizedmore » surface layer with a density close to the silicon density. An increase in the helium dose causes the formation of an internal porous layer.« less

The effects on γ-LiAlO2 induced by nuclear energy losses during Ga ions implantation

NASA Astrophysics Data System (ADS)

Zhang, Jing; Song, Hong-Lian; Qiao, Mei; Yu, Xiao-Fei; Wang, Tie-Jun; Wang, Xue-Lin

2017-09-01

To explore the evolution of γ-LiAlO2 under ion irradiation at low energy, we implanted Ga ions of 30, 80 and 150 keV at fluences of 1 × 1014 and 1 × 1015 ions/cm2 in z-cut γ-LiAlO2 samples, respectively. The implantation resulted in damage regions dominated by nuclear energy losses at depth of 232 Å, 514 Å, and 911 Å beneath the surface, respectively, which was simulated by the Stopping and Range of Ions in Matter program. The irradiated γ-LiAlO2 were characterized with atomic force microscope, Raman spectroscopy, X-ray diffraction and Rutherford backscattering in a channeling mode for morphology evolution, structure information and damage profiles. The interesting and partly abnormal results showed the various behaviors in modification of surface by Ga ions implantation.

Study of molybdenum-aluminum interdiffusion kinetics and contact resistance for VLSI applications

NASA Astrophysics Data System (ADS)

Singh, R. N.; Brown, D. M.; Kim, M. J.; Smith, G. A.

1985-12-01

Interdiffusion barrier characteristics of molybdenum thin film with aluminum-1% Si is studied between 733 and 763 K via sheet and contact resistance measurements, Rutherford backscattering spectrometry, secondary ion mass spectrometry, and x-ray diffraction analysis. The results indicate that thermal annealing of Mo/Al-1% Si thin film couples leads to MoAl12 compound formation initially as a nonplanar front, but extensive annealing results in complete transformation of Al-1% Si to MoAl12 and a significant increase in contact resistance. The interdiffusion kinetics is diffusion controlled and shows parabolic time dependence, incubation periods, and extremely high activation energy value of 5.9 eV. The incubation periods and an high activation energy values are explained by the presence of silicon precipitates at the Mo/Al-1% Si interface. Implications of these observations to VLSI device characteristics are discussed and a safe time-temperature processing regime is proposed.

Epitaxial cuprate superconductor/ferroelectric heterostructures.

PubMed

Ramesh, R; Inam, A; Chan, W K; Wilkens, B; Myers, K; Remschnig, K; Hart, D L; Tarascon, J M

1991-05-17

Thin-film heterostructures of Bi(4)Ti(3)O(12)Bi(2)Sr(2)CuO(6+x), have been grown on single crystals of SrTiO(3), LaAlO(3), and MgAl(2)O(4) by pulsed laser deposition. X-ray diffraction studies show the presence of c-axis orientation only; Rutherford backscattering experiments show the composition to be close to the nominal stoichiometry. The films are ferroelectric and exhibit a symmetric hysteresis loop. The remanent polarization was 1.0 microcoulomb per square centimeter, and the coercive field was 2.0 x 10(5) volts per centimeter. Similar results were obtained with YBa(2)Cu(3)O(7-x) and Bi(2)Sr(2)CaCu(2)O(8+x), and single-crystal Bi(2)Sr(2)CuO(6+x)as the bottom electrodes. These films look promising for use as novel, lattice-matched, epitaxial ferroelectric film/electrode heterostructures in nonvolatile memory applications.

Ion irradiation damage in ilmenite at 100 K

USGS Publications Warehouse

Mitchell, J.N.; Yu, N.; Devanathan, R.; Sickafus, K.E.; Nastasi, M.A.; Nord, G.L.

1997-01-01

A natural single crystal of ilmenite (FeTiO3) was irradiated at 100 K with 200 keV Ar2+. Rutherford backscattering spectroscopy and ion channeling with 2 MeV He+ ions were used to monitor damage accumulation in the surface region of the implanted crystal. At an irradiation fluence of 1 ?? 1015 Ar2+/cm2, considerable near-surface He+ ion dechanneling was observed, to the extent that ion yield from a portion of the aligned crystal spectrum reached the yield level of a random spectrum. This observation suggests that the near-surface region of the crystal was amorphized by the implantation. Cross-sectional transmission electron microscopy and electron diffraction on this sample confirmed the presence of a 150 nm thick amorphous layer. These results are compared to similar investigations on geikielite (MgTiO3) and spinel (MgAl2O4) to explore factors that may influence radiation damage response in oxides.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nazareth, A.S.; Sood, D.K.; Zmood, R.B.

A focusing grid broad beam Kaufman source, using argon ions on a target of nominal composition Nd{sub 2}Fe{sub 14}B has been employed to sputter deposit magnetic thin films of thicknesses ranging from 800 {angstrom} to 1300 {angstrom} on silicon-(111) substrates at room temperature. These films were characterized for their composition depth profile by Rutherford Backscattering Spectroscopy, while x-ray diffraction was used to study the crystallographic structure. Due to a close match between (111) Si with (220) Nd{sub 2}Fe{sub 14}B lattice spacings, preferred crystallographic texturing was expected, and experimental results showed a greatly enhanced (220) texture. The degradation in magnetic propertiesmore » was attributed to the presence of oxygen in the films as indicated by concentration depth profiles. It is premised that another significant role of oxygen may be to relieve the misfit strain across the interface by its incorporation within the Nd{sub 2}Fe{sub 14}B phase.« less

Friction and wear behavior of nitrogen-doped ZnO thin films deposited via MOCVD under dry contact

DOE PAGES

Mbamara, U. S.; Olofinjana, B.; Ajayi, O. O.; ...

2016-02-01

Most researches on doped ZnO thin films are tilted toward their applications in optoelectronics and semiconductor devices. Research on their tribological properties is still unfolding. In this work, nitrogen-doped ZnO thin films were deposited on 304 L stainless steel substrate from a combination of zinc acetate and ammonium acetate precursor by MOCVD technique. Compositional and structural studies of the films were done using Rutherford Backscattering Spectroscopy (RBS) and X-ray Diffraction (XRD). The frictional behavior of the thin film coatings was evaluated using a ball-on-flat configuration in reciprocating sliding under dry contact condition. After friction test, the flat and ball counter-facemore » surfaces were examined to assess the wear dimension and failure mechanism. In conclusion, both friction behavior and wear (in the ball counter-face) were observed to be dependent on the crystallinity and thickness of the thin film coatings.« less

Characterization of cesium diffusion behavior into granite matrix using Rutherford backscattering spectrometry

NASA Astrophysics Data System (ADS)

Tsai, Shih-Chin; Lee, Chuan-Pin; Tsai, Tsuey-Lin; Yu, Yueh-Chung

2017-10-01

The characterization of radionuclide diffusion behavior is necessary for performance assessment of granite as a geological barrier for high-level radioactive waste disposal. Rutherford backscattering spectrometry (RBS), a novel nuclear ion-beam technique, was selected in this study because it is suitable for analyzing the concentration gradients of heavy elements in a well-defined matrix and allows measuring diffusion coefficients on a micrometer scale. In this study Cs was selected to represent Cs-135 (a key radionuclide in high-level waste) diffusion in granite. The Cs energy spectrum and concentration deep profile were analyzed and the diffusion coefficient of Cs in granite for three different locations were determined, which were 2.06 × 10-19m2 s-1, 3.58 × 10-19m2 s-1, and 7.19 × 10-19m2 s-1-19m2 s-19m2 s-1, respectively, which were of a similiar order of magnitude. Results from other studies are also compared and discussed in this paper.

Simulation of Rutherford backscattering spectrometry from arbitrary atom structures.

PubMed

Zhang, S; Nordlund, K; Djurabekova, F; Zhang, Y; Velisa, G; Wang, T S

2016-10-01

Rutherford backscattering spectrometry in a channeling direction (RBS/C) is a powerful tool for analysis of the fraction of atoms displaced from their lattice positions. However, it is in many cases not straightforward to analyze what is the actual defect structure underlying the RBS/C signal. To reveal insights of RBS/C signals from arbitrarily complex defective atomic structures, we develop here a method for simulating the RBS/C spectrum from a set of arbitrary read-in atom coordinates (obtained, e.g., from molecular dynamics simulations). We apply the developed method to simulate the RBS/C signals from Ni crystal structures containing randomly displaced atoms, Frenkel point defects, and extended defects, respectively. The RBS/C simulations show that, even for the same number of atoms in defects, the RBS/C signal is much stronger for the extended defects. Comparison with experimental results shows that the disorder profile obtained from RBS/C signals in ion-irradiated Ni is due to a small fraction of extended defects rather than a large number of individual random atoms.

Using Rutherford Backscattering Spectroscopy to Characterize Targets for MTW

NASA Astrophysics Data System (ADS)

Brown, Gunnar; Stockler, Barak; Ward, Ryan; Freeman, Charlie; Padalino, Stephen; Stillman, Collin; Ivancic, Steven; Reagan, S. P.; Sangster, T. C.

2017-10-01

A study is underway to determine the composition and thickness of targets used at the Multiterawatt (MTW) laser facility at the Laboratory for Laser Energetics (LLE) using Rutherford backscattering spectroscopy (RBS). In RBS, an ion beam is incident on a sample and the scattered ions are detected with a surface barrier detector. The resulting energy spectra of the scattered ions can be analyzed to determine important parameters of the target including elemental composition and thickness. Proton, helium and deuterium beams from the 1.7 MV Pelletron accelerator at SUNY Geneseo have been used to characterize several different targets for MTW, including CH and aluminum foils of varying thickness. RBS spectra were also obtained for a cylindrical iron buried-layer target with aluminum dopant which was mounted on a silicon carbide stalk. The computer program SIMNRA is used to analyze the spectra. This work was funded in part by a Grant from the DOE through the Laboratory for Laser Energetics.

Simulation of Rutherford backscattering spectrometry from arbitrary atom structures

NASA Astrophysics Data System (ADS)

Zhang, S.; Nordlund, K.; Djurabekova, F.; Zhang, Y.; Velisa, G.; Wang, T. S.

2016-10-01

Rutherford backscattering spectrometry in a channeling direction (RBS/C) is a powerful tool for analysis of the fraction of atoms displaced from their lattice positions. However, it is in many cases not straightforward to analyze what is the actual defect structure underlying the RBS/C signal. To reveal insights of RBS/C signals from arbitrarily complex defective atomic structures, we develop here a method for simulating the RBS/C spectrum from a set of arbitrary read-in atom coordinates (obtained, e.g., from molecular dynamics simulations). We apply the developed method to simulate the RBS/C signals from Ni crystal structures containing randomly displaced atoms, Frenkel point defects, and extended defects, respectively. The RBS/C simulations show that, even for the same number of atoms in defects, the RBS/C signal is much stronger for the extended defects. Comparison with experimental results shows that the disorder profile obtained from RBS/C signals in ion-irradiated Ni is due to a small fraction of extended defects rather than a large number of individual random atoms.

Thermal stability of trapped hydrogen in amorphous carbon thin films on Si substrate using ion beam scattering

NASA Astrophysics Data System (ADS)

Moore, A.; Tecos, G.; Nandasiri, M. I.; Garratt, E.; Wickey, K. J.; Gao, X.; Kayani, A.

2009-11-01

Unbalanced magnetron sputtering deposition of C-H films has been performed with various levels of negative substrate bias and with a fixed flow rate of hydrogen. Argon was used as a sputtering gas and formed the majority of the gas in the plasma. The effect of hydrogenation on the final concentration of trapped elements and their thermal stability with respect to hydrogen content is studied using ion beam analysis (IBA) techniques. The elemental concentrations of the films were measured in samples deposited on silicon substrates with a 3.3 MeV of He++ beam used to perform Rutherford Backscattering Spectroscopy (RBS), Non-Rutherford backscattering Spectroscopy (NRBS) and Elastic Recoil Detection Analysis (ERDA). Thermal stability with respect to trapped hydrogen in the film has been studied. As the films were heated in-situ in the vacuum using a o non-gassy button heater, hydrogen was found to be decreasing around 400° C.

Computer simulation program for medium-energy ion scattering and Rutherford backscattering spectrometry

NASA Astrophysics Data System (ADS)

Nishimura, Tomoaki

2016-03-01

A computer simulation program for ion scattering and its graphical user interface (MEISwin) has been developed. Using this program, researchers have analyzed medium-energy ion scattering and Rutherford backscattering spectrometry at Ritsumeikan University since 1998, and at Rutgers University since 2007. The main features of the program are as follows: (1) stopping power can be chosen from five datasets spanning several decades (from 1977 to 2011), (2) straggling can be chosen from two datasets, (3) spectral shape can be selected as Gaussian or exponentially modified Gaussian, (4) scattering cross sections can be selected as Coulomb or screened, (5) simulations adopt the resonant elastic scattering cross section of 16O(4He, 4He)16O, (6) pileup simulation for RBS spectra is supported, (7) natural and specific isotope abundances are supported, and (8) the charge fraction can be chosen from three patterns (fixed, energy-dependent, and ion fraction with charge-exchange parameters for medium-energy ion scattering). This study demonstrates and discusses the simulations and their results.

Growth and Surface Modification of LaFeO3 Thin Films Induced By Reductive Annealing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Flynn, Brendan T.; Zhang, Hongliang; Shutthanandan, V.

2015-03-01

The electronic and ionic conductivity of perovskite oxides has enabled their use in diverse applications such as automotive exhaust catalysts, solid oxide fuel cell cathodes, and visible light photocatalysts. The redox chemistry at the surface of perovskite oxides is largely dependent on the oxidation state of the metal cations as well as the oxide surface stoichiometry. In this study, LaFeO3 (LFO) thin films grown on yttria-stabilized zirconia (YSZ) was characterized using both bulk and surface sensitive techniques. A combination of in situ reflection high energy electron diffraction (RHEED), x-ray diffraction (XRD), transmission electron microscopy (TEM) and Rutherford backscattering spectrometry (RBS)more » demonstrated that the film is highly oriented and stoichiometric. The film was annealed in an ultra-high vacuum chamber to simulate reducing conditions and studied by angle-resolved x-ray photoelectron spectroscopy (XPS). Iron was found to exist as Fe(0), Fe(II), and Fe(III) depending on the annealing conditions and the depth within the film. A decrease in the concentration of surface oxygen species was correlated with iron reduction. These results should help guide and enhance the design of perovskite materials for catalysts.« less

In-situ determination of energy species yields of intense particle beams

DOEpatents

Kugel, H.W.; Kaita, R.

1983-09-26

Objects of the present invention are provided for a particle beam having a full energy component at least as great as 25 keV, which is directed onto a beamstop target, such that Rutherford backscattering, preferably near-surface backscattering occurs. The geometry, material composition and impurity concentration of the beam stop are predetermined, using any suitable conventional technique. The energy-yield characteristic response of backscattered particles is measured over a range of angles using a fast ion electrostatic analyzer having a microchannel plate array at its focal plane. The knee of the resulting yield curve, on a plot of yield versus energy, is analyzed to determine the energy species components of various beam particles having the same mass.

Visible-light-responsive ZnCuO nanoparticles: benign photodynamic killers of infectious protozoans

PubMed Central

Nadhman, Akhtar; Nazir, Samina; Khan, Malik Ihsanullah; Ayub, Attiya; Muhammad, Bakhtiar; Khan, Momin; Shams, Dilawar Farhan; Yasinzai, Masoom

2015-01-01

Human beings suffer from several infectious agents such as viruses, bacteria, and protozoans. Recently, there has been a great interest in developing biocompatible nanostructures to deal with infectious agents. This study investigated benign ZnCuO nanostructures that were visible-light-responsive due to the resident copper in the lattice. The nanostructures were synthesized through a size-controlled hot-injection process, which was adaptable to the surface ligation processes. The nanostructures were then characterized through transmission electron microscopy, X-ray diffraction, diffused reflectance spectroscopy, Rutherford backscattering, and photoluminescence analysis to measure crystallite nature, size, luminescence, composition, and band-gap analyses. Antiprotozoal efficiency of the current nanoparticles revealed the photodynamic killing of Leishmania protozoan, thus acting as efficient metal-based photosensitizers. The crystalline nanoparticles showed good biocompatibility when tested for macrophage toxicity and in hemolysis assays. The study opens a wide avenue for using toxic material in resident nontoxic forms as an effective antiprotozoal treatment. PMID:26604755

Combinatorial investigation of Fe–B thin-film nanocomposites

PubMed Central

Brunken, Hayo; Grochla, Dario; Savan, Alan; Kieschnick, Michael; Meijer, Jan D; Ludwig, Alfred

2011-01-01

Combinatorial magnetron sputter deposition from elemental targets was used to create Fe–B composition spread type thin film materials libraries on thermally oxidized 4-in. Si wafers. The materials libraries consisting of wedge-type multilayer thin films were annealed at 500 or 700 °C to transform the multilayers into multiphase alloys. The libraries were characterized by nuclear reaction analysis, Rutherford backscattering, nanoindentation, vibrating sample magnetometry, x-ray diffraction (XRD) and transmission electron microscopy (TEM). Young's modulus and hardness values were related to the annealing parameters, structure and composition of the films. The magnetic properties of the films were improved by annealing in a H2 atmosphere, showing a more than tenfold decrease in the coercive field values in comparison to those of the vacuum-annealed films. The hardness values increased from 8 to 18 GPa when the annealing temperature was increased from 500 to 700 °C. The appearance of Fe2B phases, as revealed by XRD and TEM, had a significant effect on the mechanical properties of the films. PMID:27877435

Silicon etch with chromium ions generated by a filtered or non-filtered cathodic arc discharge

PubMed Central

Scopece, Daniele; Döbeli, Max; Passerone, Daniele; Maeder, Xavier; Neels, Antonia; Widrig, Beno; Dommann, Alex; Müller, Ulrich; Ramm, Jürgen

2016-01-01

Abstract The pre-treatment of substrate surfaces prior to deposition is important for the adhesion of physical vapour deposition coatings. This work investigates Si surfaces after the bombardment by energetic Cr ions which are created in cathodic arc discharges. The effect of the pre-treatment is analysed by X-ray diffraction, Rutherford backscattering spectroscopy, scanning electron microscopy and in-depth X-ray photoemission spectroscopy and compared for Cr vapour produced from a filtered and non-filtered cathodic arc discharge. Cr coverage as a function of ion energy was also predicted by TRIDYN Monte Carlo calculations. Discrepancies between measured and simulated values in the transition regime between layer growth and surface removal can be explained by the chemical reactions between Cr ions and the Si substrate or between the substrate surface and the residual gases. Simulations help to find optimum and more stable parameters for specific film and substrate combinations faster than trial-and-error procedure. PMID:27877854

Effects of 200 keV argon ions irradiation on microstructural properties of titanium nitride films

NASA Astrophysics Data System (ADS)

Popović, M.; Novaković, M.; Šiljegović, M.; Bibić, N.

2012-05-01

This paper reports on a study of microstructrual changes in TiN/Si bilayers due to 200 keV Ar+ ions irradiation at room temperature. The 240 nm TiN/Si bilayers were prepared by d.c. reactive sputtering on crystalline Si (1 0 0) substrates. The TiN films were deposited at the substrate temperature of 150 °C. After deposition the TiN/Si bilayers were irradiated to the fluences of 5 × 1015 and 2 × 1016 ions/cm2. The structural changes induced by ion irradiation in the TiN/Si bilayers were analyzed by Rutherford Backscattering Spectroscopy (RBS), X-ray diffraction analyses (XRD) and Transmission Electron Microscopy (TEM). The irradiations caused the microstructrual changes in TiN layers, but no amorphization even at the highest argon fluence of 2 × 1016 ions/cm2. It is also observed that the mean crystallite size decreases with the increasing ion fluence.

Effect of Thickness on the Structure, Composition and Properties of Titanium Nitride Nano-Coatings

DOE Office of Scientific and Technical Information (OSTI.GOV)

Martinez, Gustavo; Shutthanandan, V.; Thevuthasan, Suntharampillai

2014-05-05

Titanium nitride (TiNx) coatings were grown by magnetron sputtering onto Si(1 0 0) substrates by varying time of deposition to produce coatings with variable thickness (dTiN) in the range of 20-120 nm. TiNx coatings were characterized by studying their structure, composition, and mechanical properties. Nuclear reaction analysis (NRA) combined with Rutherford backscattering spectrometry (RBS) analyses indicate that the grown coatings were stoichiometric TiN. Grazing incidence X-ray diffraction (GIXRD) measurements indicate that the texturing of TiN coatings changes as a function of dTiN. The (1 1 1) and (0 0 2) peaks appear initially; (1 1 1) becomes intense while (0more » 0 2) disappears with increasing dTiN. Dense, columnar grain structure was evident for all the coatings in electron microscopy analyses. The residual stress for TiN coatings with dTiN~120 nm was 1.07 GPa in compression while thinner samples exhibit higher values of stress.« less

Microstructural, mechanical and optical properties research of a carbon ion-irradiated Y2SiO5 crystal

NASA Astrophysics Data System (ADS)

Song, Hong-Lian; Yu, Xiao-Fei; Huang, Qing; Qiao, Mei; Wang, Tie-Jun; Zhang, Jing; Liu, Yong; Liu, Peng; Zhu, Zi-Hua; Wang, Xue-Lin

2017-09-01

Ion irradiation has been a popular method to modify properties of different kinds of materials. Ion-irradiated crystals have been studied for years, but the effects on microstructure and optical properties during irradiation process are still controversial. In this paper, we used 6 MeV C ions with a fluence of 1 × 1015 ion/cm2 irradiated Y2SiO5 (YSO) crystal at room temperature, and discussed the influence of C ion irradiation on the microstructure, mechanical and optical properties of YSO crystal by Rutherford backscattering/channeling analyzes (RBS/C), X-ray diffraction patterns (XRD), Raman, nano-indentation test, transmission and absorption spectroscopy, the prism coupling and the end-facet coupling experiments. We also used the secondary ion mass spectrometry (SIMS) to analyze the elements distribution along sputtering depth. 6 MeV C ions with a fluence of 1 × 1015 ion/cm2 irradiated caused the deformation of YSO structure and also influenced the spectral properties and lattice vibrations.

MoS2 thin films prepared by sulfurization

NASA Astrophysics Data System (ADS)

Sojková, M.; Chromik, Å.; Rosová, A.; Dobročka, E.; Hutár, P.; Machajdík, D.; Kobzev, A. P.; Hulman, M.

2017-08-01

Sulfurization of a Mo layer is one of the most used methods for preparation of thin MoS2 films. In the method, a sulfur powder and Mo covered substrate are placed in different positions within a furnace, and heated separately. This requires a furnace having at least two zones. Here, we present a simplified version of the method where a one-zone tube furnace was used. A molybdenum film on a substrate and a sulfur powder were placed in the center of the furnace and heated at temperatures above 800°C. Mo films transform into MoS2 in vapors of sulphur at high temperatures. As-prepared films were characterized by number of techniques including X-ray diffraction (XRD), atomic force microscopy (AFM), transmission electron microscopy (TEM), Raman, Rutherford backscattering (RBS) and X-ray photoelectron spectroscopy (XPS). It appears that one-zone sulfurization, with just one annealing temperature used, is a suitable method for fabrication of MoS2 thin films. This method is fast, cheap and easy to scale up.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Napari, Mari, E-mail: mari.napari@jyu.fi; Malm, Jari; Lehto, Roope

ZnO films were grown by atomic layer deposition at 35 °C on poly(methyl methacrylate) substrates using diethylzinc and water precursors. The film growth, morphology, and crystallinity were studied using Rutherford backscattering spectrometry, time-of-flight elastic recoil detection analysis, atomic force microscopy, scanning electron microscopy, and x-ray diffraction. The uniform film growth was reached after several hundreds of deposition cycles, preceded by the precursor penetration into the porous bulk and island-type growth. After the full surface coverage, the ZnO films were stoichiometric, and consisted of large grains (diameter 30 nm) with a film surface roughness up to 6 nm (RMS). The introduction of Al{sub 2}O{submore » 3} seed layer enhanced the initial ZnO growth substantially and changed the surface morphology as well as the crystallinity of the deposited ZnO films. Furthermore, the water contact angles of the ZnO films were measured, and upon ultraviolet illumination, the ZnO films on all the substrates became hydrophilic, independent of the film crystallinity.« less

Epitaxial Ferroelectric Ba(0.5)Sr(0.5)TiO3 Thin Films for Room-Temperature High-Frequency Tunable Element Applications

NASA Technical Reports Server (NTRS)

Chen, C. L.; Feng, H. H.; Zhang, Z.; Brazdeikis, A.; Miranda, F. A.; VanKeuls, F. W.; Romanofsky, R. R.; Huang, Z. J.; Liou, Y.; Chu, W. K.;

Ion irradiation of AZO thin films for flexible electronics

NASA Astrophysics Data System (ADS)

Boscarino, Stefano; Torrisi, Giacomo; Crupi, Isodiana; Alberti, Alessandra; Mirabella, Salvatore; Ruffino, Francesco; Terrasi, Antonio

2017-02-01

Aluminum doped Zinc oxide (AZO) is a promising transparent conductor for solar cells, displays and touch-screen technologies. The resistivity of AZO is typically improved by thermal annealing at temperatures not suitable for plastic substrates. Here we present a non-thermal route to improve the electrical and structural properties of AZO by irradiating the TCO films with O+ or Ar+ ion beams (30-350 keV, 3 × 1015-3 × 1016 ions/cm2) after the deposition on glass and flexible polyethylene naphthalate (PEN). X-ray diffraction, optical absorption, electrical measurements, Rutherford Backscattering Spectrometry and Atomic Force Microscopy evidenced an increase of the crystalline grain size and a complete relief of the lattice strain upon ion beam irradiation. Indeed, the resistivity of thin AZO films irradiated at room temperature decreased of two orders of magnitude, similarly to a thermal annealing at 400 °C. We also show that the improvement of the electrical properties does not simply depend on the strain or polycrystalline domain size, as often stated in the literature.

Cobalt and sulfur co-doped nano-size TiO2 for photodegradation of various dyes and phenol.

PubMed

Siddiqa, Asima; Masih, Dilshad; Anjum, Dalaver; Siddiq, Muhammad

2015-11-01

Various compositions of cobalt and sulfur co-doped titania nano-photocatalyst are synthesized via sol-gel method. A number of techniques including X-ray diffraction (XRD), ultraviolet-visible (UV-Vis), Rutherford backscattering spectrometry (RBS), thermal gravimetric analysis (TGA), Raman, N2 sorption, electron microscopy are used to examine composition, crystalline phase, morphology, distribution of dopants, surface area and optical properties of synthesized materials. The synthesized materials consisted of quasispherical nanoparticles of anatase phase exhibiting a high surface area and homogeneous distribution of dopants. Cobalt and sulfur co-doped titania demonstrated remarkable structural and optical properties leading to an efficient photocatalytic activity for degradation of dyes and phenol under visible light irradiations. Moreover, the effect of dye concentration, catalyst dose and pH on photodegradation behavior of environmental pollutants and recyclability of the catalyst is also examined to optimize the activity of nano-photocatalyst and gain a better understanding of the process. Copyright © 2015. Published by Elsevier B.V.

P-type ZnO:N Films Prepared by Thermal Oxidation of Zn3N2

NASA Astrophysics Data System (ADS)

Zhang, Bin; Li, Min; Wang, Jian-Zhong; Shi, Li-Qun

2013-02-01

We prepare p-type ZnO:N films by annealing Zn3N2 films in oxygen over a range of temperatures. The prepared films are characterized by various techniques, such as Rutherford backscattering spectroscopy, x-ray diffraction, x-ray photoemission spectroscopy, the Hall effect and photoluminescence spectra. The results show that the Zn3N2 films start to transform to ZnO at 300°C and the N content decreases with an increase in annealing temperature. N has two local chemical states: zinc oxynitride (ZnO1-xNx) and substitutional NO in O-rich local environments (α -NO). The conduction type changes from n-type to p-type upon oxidation at 400-600°C, indicating that N is an effective acceptor in the ZnO film. The photoluminescence spectra show the UV emission and defect-related emissions of ZnO:N films. The mechanism and efficiency of p-type doping are briefly discussed.

Raman scattering from rapid thermally annealed tungsten silicide

NASA Technical Reports Server (NTRS)

Kumar, Sandeep; Dasgupta, Samhita; Jackson, Howard E.; Boyd, Joseph T.

1987-01-01

Raman scattering as a technique for studying the formation of tungsten silicide is presented. The tungsten silicide films have been formed by rapid thermal annealing of thin tungsten films sputter deposited on silicon substrates. The Raman data are interpreted by using data from resistivity measurements, Auger and Rutherford backscattering measurements, and scanning electron microscopy.

Simulation of Rutherford backscattering spectrometry from arbitrary atom structures

DOE PAGES

Zhang, S.; Univ. of Helsinki; Nordlund, Kai; ...

2016-10-25

Rutherford backscattering spectrometry in a channeling direction (RBS/C) is a powerful tool for analysis of the fraction of atoms displaced from their lattice positions. However, it is in many cases not straightforward to analyze what is the actual defect structure underlying the RBS/C signal. To reveal insights of RBS/C signals from arbitrarily complex defective atomic structures, we develop in this paper a method for simulating the RBS/C spectrum from a set of arbitrary read-in atom coordinates (obtained, e.g., from molecular dynamics simulations). We apply the developed method to simulate the RBS/C signals from Ni crystal structures containing randomly displaced atoms,more » Frenkel point defects, and extended defects, respectively. The RBS/C simulations show that, even for the same number of atoms in defects, the RBS/C signal is much stronger for the extended defects. Finally, comparison with experimental results shows that the disorder profile obtained from RBS/C signals in ion-irradiated Ni is due to a small fraction of extended defects rather than a large number of individual random atoms.« less

Ion Beam Analysis of the Thermal Stability of Hydrogenated Diamond-Like Carbon Thin Films on Si Substrate

NASA Astrophysics Data System (ADS)

Nandasiri, M. I.; Moore, A.; Garratt, E.; Wickey, K. J.; AlFaify, S.; Gao, X.; Kayani, A.; Ingram, D.

2009-03-01

Unbalanced magnetron sputtering deposition of C-H films has been performed with various levels of negative substrate bias and with a fixed flow rate of hydrogen. Argon was used as a sputtering gas and formed the majority of the gas in the plasma. The effect of hydrogenation on the final concentration of trapped elements and their thermal stability with respect to hydrogen content is studied using ion beam analysis (IBA) techniques. The elemental concentrations of the films were measured in the films deposited on silicon substrates with a 2.5 MeV of H+ beam, which is used to perform Rutherford Backscattering Spectrometry (RBS) and Non-Rutherford Backscattering spectrometry (NRBS) and with 16 MeV of O5+ beam, used to perform Elastic Recoil Detection Analysis (ERDA). Effect of bias on the thermal stability of trapped hydrogen in the films has been studied. As the films were heated in-situ in vacuum using a non-gassy button heater, hydrogen was found to be decreasing around 400° C.

Self-organization processes in polysiloxane block copolymers, initiated by modifying fullerene additives

NASA Astrophysics Data System (ADS)

Voznyakovskii, A. P.; Kudoyarova, V. Kh.; Kudoyarov, M. F.; Patrova, M. Ya.

2017-08-01

Thin films of a polyblock polysiloxane copolymer and their composites with a modifying fullerene C60 additive are studied by atomic force microscopy, Rutherford backscattering, and neutron scattering. The data of atomic force microscopy show that with the addition of fullerene to the bulk of the polymer matrix, the initial relief of the film surface is leveled more, the larger the additive. This trend is associated with the processes of self-organization of rigid block sequences, which are initiated by the field effect of the surface of fullerene aggregates and lead to an increase in the number of their domains in the bulk of the polymer matrix. The data of Rutherford backscattering and neutron scattering indicate the formation of additional structures with a radius of 60 nm only in films containing fullerene, and their fraction increases with increasing fullerene concentration. A comparative analysis of the data of these methods has shown that such structures are, namely, the domains of a rigid block and are not formed by individual fullerene aggregates. The interrelation of the structure and mechanical properties of polymer films is considered.

Observations on the Role of Hydrogen in Facet Formation in Near-alpha Titanium (Preprint)

DTIC Science & Technology

2011-05-01

using quantitative tilt fractography and electron backscatter diffraction while facet topography was examined using ultra high resolution scanning...quantitative tilt fractography and electron backscatter diffraction while facet topography was examined using ultra high resolution scanning electron...tilt fractography / electron backscatter diffraction (EBSD) technique in which both the crystallographic orientation of the fractured grain and the

Depth Profiling of SiC Lattice Damage Using Micro-Raman Spectroscopy

DTIC Science & Technology

2002-01-01

can significantly change the electric behavior. Techniques like Positron Annihilation Spectroscopy [5,6] and Rutherford Backscattering/Channeling... Semiconductor Materials for Optoelectronic Applications Symposium held in Boston, Massachusetts on November 26-29, 2001. To order the complete compilation... Spectroscopy DISTRIBUTION: Approved for public release, distribution unlimited This paper is part of the following report: TITLE: Progress in

Off-stoichiometry indexation of BiFeO3 thin film on silicon by Rutherford backscattering spectrometry

NASA Astrophysics Data System (ADS)

Wang, Ze-Song; Xiao, Ren-Zheng; Zou, Chang-Wei; Xie, Wei; Tian, Can-Xin; Xue, Shu-Wen; Liu, Gui-Ang; Devi, Neena; Fu, De-Jun

2018-04-01

Not Available Project supported by the National Natural Science Foundation of China (Grant Nos. 11605103, 11405117, and 11747074), the Guangdong Provincial Natural Science Foundation, China (Grant Nos. 2014A030307008 and 2016A030313670), and the Guangdong Provincial Science and Technology Planning Project, China (Grant Nos. 2016A010103041 and 2017A010103025).

Complementary use of ion beam elastic backscattering and recoil detection analysis for the precise determination of the composition of thin films made of light elements

NASA Astrophysics Data System (ADS)

Climent-Font, A.; Cervera, M.; Hernández, M. J.; Muñoz-Martín, A.; Piqueras, J.

2008-04-01

Rutherford backscattering spectrometry (RBS) is a well known powerful technique to obtain depth profiles of the constituent elements in a thin film deposited on a substrate made of lighter elements. In its standard use the probing beam is typically 2 MeV He. Its capabilities to obtain precise composition profiles are severely diminished when the overlaying film is made of elements lighter than the substrate. In this situation the analysis of the energy of the recoiled element from the sample in the elastic scattering event, the ERDA technique may be advantageous. For the detection of light elements it is also possible to use beams at specific energies producing elastic resonances with these light elements to be analyzed, with a much higher scattering cross sections than the Rutherford values. This technique may be called non-RBS. In this work we report on the complementary use of ERDA with a 30 MeV Cl beam and non-RBS with 1756 keV H ions to characterize thin films made of boron, carbon and nitrogen (BCN) deposited on Si substrates.

Investigation of Damage with Cluster Ion Beam Irradiation Using HR-RBS

DOE Office of Scientific and Technical Information (OSTI.GOV)

Seki, Toshio; Aoki, Takaaki; Matsuo, Jiro

2008-11-03

Cluster ion beam can process targets with shallow damage because of the very low irradiation energy per atom. However, it is needed to investigate the damage with cluster ion beam irradiation, because recent applications demand process targets with ultra low damage. The shallow damage can be investigated from depth profiles of specific species before and after ion irradiation. They can be measured with secondary ion mass spectrometry (SIMS) and Rutherford backscattering spectroscopy (RBS). High resolution Rutherford backscattering spectroscopy (HR-RBS) is a non destructive measurement method and depth profiles can be measured with nano-resolution. The cluster ion beam mixing of thinmore » Ni layer in carbon targets can be investigated with HR-RBS. The mixing depth with cluster ion irradiation at 10 keV was about 10 nm. The mixing depth with cluster ion irradiation at 1 keV and 5 keV were less than 1 nm and 5 nm, respectively. The number of displaced Ni atoms with cluster ion irradiation was very larger than that with monomer ion irradiation of same energy. This result shows that violent mixing occurs with single cluster impact.« less

The potential of materials analysis by electron rutherford backscattering as illustrated by a case study of mouse bones and related compounds.

PubMed

Vos, Maarten; Tökési, Károly; Benkö, Ilona

2013-06-01

Electron Rutherford backscattering (ERBS) is a new technique that could be developed into a tool for materials analysis. Here we try to establish a methodology for the use of ERBS for materials analysis of more complex samples using bone minerals as a test case. For this purpose, we also studied several reference samples containing Ca: calcium carbonate (CaCO(3)) and hydroxyapatite and mouse bone powder. A very good understanding of the spectra of CaCO(3) and hydroxyapatite was obtained. Quantitative interpretation of the bone spectrum is more challenging. A good fit of these spectra is only obtained with the same peak widths as used for the hydroxyapatite sample, if one allows for the presence of impurity atoms with a mass close to that of Na and Mg. Our conclusion is that a meaningful interpretation of spectra of more complex samples in terms of composition is indeed possible, but only if widths of the peaks contributing to the spectra are known. Knowledge of the peak widths can either be developed by the study of reference samples (as was done here) or potentially be derived from theory.

Structural and gasochromic properties of WO3 films prepared by reactive sputtering deposition

NASA Astrophysics Data System (ADS)

Yamamoto, S.; Hakoda, T.; Miyashita, A.; Yoshikawa, M.

2015-02-01

The effects of deposition temperature and film thickness on the structural and gasochromic properties of tungsten trioxide (WO3) films used for the optical detection of diluted cyclohexane gas have been investigated. The WO3 films were prepared on SiO2 substrates by magnetron sputtering, with the deposition temperature ranging from 300 to 550 °C in an Ar and O2 gas mixture. The films were characterized by scanning electron microscopy (SEM), x-ray diffraction (XRD), and Rutherford backscattering spectroscopy (RBS). The gasochromic properties of the WO3 films, coated with a catalytic Pt layer, were examined by exposing them to up to 5% cyclohexane in N2 gas. It was found that (001)-oriented monoclinic WO3 films, with a columnar structure, grew at deposition temperatures between 400 and 450 °C. Furthermore, (010)-oriented WO3 films were preferably formed at deposition temperatures higher than 500 °C. The gasochromic characterization of the Pt/WO3 films revealed that (001)-oriented WO3 films, with cauliflower-like surface morphology, were appropriate for the optical detection of cyclohexane gas.

Au Nanoparticle Sub-Monolayers Sandwiched between Sol-Gel Oxide Thin Films

PubMed Central

Della Gaspera, Enrico; Menin, Enrico; Sada, Cinzia

2018-01-01

Sub-monolayers of monodisperse Au colloids with different surface coverage have been embedded in between two different metal oxide thin films, combining sol-gel depositions and proper substrates functionalization processes. The synthetized films were TiO2, ZnO, and NiO. X-ray diffraction shows the crystallinity of all the oxides and verifies the nominal surface coverage of Au colloids. The surface plasmon resonance (SPR) of the metal nanoparticles is affected by both bottom and top oxides: in fact, the SPR peak of Au that is sandwiched between two different oxides is centered between the SPR frequencies of Au sub-monolayers covered with only one oxide, suggesting that Au colloids effectively lay in between the two oxide layers. The desired organization of Au nanoparticles and the morphological structure of the prepared multi-layered structures has been confirmed by Rutherford backscattering spectrometry (RBS), Secondary Ion Mass Spectrometry (SIMS), and Scanning Electron Microscopy (SEM) analyses that show a high quality sandwich structure. The multi-layered structures have been also tested as optical gas sensors. PMID:29538338

Ga flux dependence of Er-doped GaN luminescent thin films

NASA Astrophysics Data System (ADS)

Lee, D. S.; Steckl, A. J.

2002-02-01

Er-doped GaN thin films have been grown on (111) Si substrates with various Ga fluxes in a radio frequency plasma molecular beam epitaxy system. Visible photoluminescence (PL) and electroluminescence (EL) emission at 537/558 nm and infrared (IR) PL emission at 1.5 μm from GaN:Er films exhibited strong dependence on the Ga flux. Both visible and IR PL and visible EL increase with the Ga flux up to the stoichiometric growth condition, as determined by growth rate saturation. Beyond this condition, all luminescence levels abruptly dropped to the detection limit with increasing Ga flux. The Er concentration, measured by secondary ion mass spectroscopy and Rutherford backscattering, decreases with increasing Ga flux under N-rich growth conditions and remains constant above the stoichiometric growth condition. X-ray diffraction indicated that the crystalline quality of the GaN:Er film was improved with increasing Ga flux up to stoichiometric growth condition and then saturated. Er ions in the films grown under N-rich conditions appear much more optically active than those in the films grown under Ga-rich conditions.

Emerging surface characterization techniques for carbon steel corrosion: a critical brief review.

PubMed

Dwivedi, D; Lepkova, K; Becker, T

2017-03-01

Carbon steel is a preferred construction material in many industrial and domestic applications, including oil and gas pipelines, where corrosion mitigation using film-forming corrosion inhibitor formulations is a widely accepted method. This review identifies surface analytical techniques that are considered suitable for analysis of thin films at metallic substrates, but are yet to be applied to analysis of carbon steel surfaces in corrosive media or treated with corrosion inhibitors. The reviewed methods include time of flight-secondary ion mass spectrometry, X-ray absorption spectroscopy methods, particle-induced X-ray emission, Rutherford backscatter spectroscopy, Auger electron spectroscopy, electron probe microanalysis, near-edge X-ray absorption fine structure spectroscopy, X-ray photoemission electron microscopy, low-energy electron diffraction, small-angle neutron scattering and neutron reflectometry, and conversion electron Moessbauer spectrometry. Advantages and limitations of the analytical methods in thin-film surface investigations are discussed. Technical parameters of nominated analytical methods are provided to assist in the selection of suitable methods for analysis of metallic substrates deposited with surface films. The challenges associated with the applications of the emerging analytical methods in corrosion science are also addressed.

Emerging surface characterization techniques for carbon steel corrosion: a critical brief review

NASA Astrophysics Data System (ADS)

Dwivedi, D.; Lepkova, K.; Becker, T.

2017-03-01

Carbon steel is a preferred construction material in many industrial and domestic applications, including oil and gas pipelines, where corrosion mitigation using film-forming corrosion inhibitor formulations is a widely accepted method. This review identifies surface analytical techniques that are considered suitable for analysis of thin films at metallic substrates, but are yet to be applied to analysis of carbon steel surfaces in corrosive media or treated with corrosion inhibitors. The reviewed methods include time of flight-secondary ion mass spectrometry, X-ray absorption spectroscopy methods, particle-induced X-ray emission, Rutherford backscatter spectroscopy, Auger electron spectroscopy, electron probe microanalysis, near-edge X-ray absorption fine structure spectroscopy, X-ray photoemission electron microscopy, low-energy electron diffraction, small-angle neutron scattering and neutron reflectometry, and conversion electron Moessbauer spectrometry. Advantages and limitations of the analytical methods in thin-film surface investigations are discussed. Technical parameters of nominated analytical methods are provided to assist in the selection of suitable methods for analysis of metallic substrates deposited with surface films. The challenges associated with the applications of the emerging analytical methods in corrosion science are also addressed.

Nanoscale Electrostructural Characterization of Compositionally Graded Al(x)Ga(1-x)N Heterostructures on GaN/Sapphire (0001) Substrate.

PubMed

Kuchuk, Andrian V; Lytvyn, Petro M; Li, Chen; Stanchu, Hryhorii V; Mazur, Yuriy I; Ware, Morgan E; Benamara, Mourad; Ratajczak, Renata; Dorogan, Vitaliy; Kladko, Vasyl P; Belyaev, Alexander E; Salamo, Gregory G

2015-10-21

We report on AlxGa1-xN heterostructures resulting from the coherent growth of a positive then a negative gradient of the Al concentration on a [0001]-oriented GaN substrate. These polarization-doped p-n junction structures were characterized at the nanoscale by a combination of averaging as well as depth-resolved experimental techniques including: cross-sectional transmission electron microscopy, high-resolution X-ray diffraction, Rutherford backscattering spectrometry, and scanning probe microscopy. We observed that a small miscut in the substrate orientation along with the accumulated strain during growth led to a change in the mosaic structure of the AlxGa1-xN film, resulting in the formation of macrosteps on the surface. Moreover, we found a lateral modulation of charge carriers on the surface which were directly correlated with these steps. Finally, using nanoscale probes of the charge density in cross sections of the samples, we have directly measured, semiquantitatively, both n- and p-type polarization doping resulting from the gradient concentration of the AlxGa1-xN layers.

Phase formation and texture of thin nickel germanides on Ge(001) and Ge(111)

DOE Office of Scientific and Technical Information (OSTI.GOV)

De Schutter, B., E-mail: deschutter.bob@ugent.be; Detavernier, C.; Van Stiphout, K.

2016-04-07

We studied the solid-phase reaction between a thin Ni film and a single crystal Ge(001) or Ge(111) substrate during a ramp anneal. The phase formation sequence was determined using in situ X-ray diffraction and in situ Rutherford backscattering spectrometry (RBS), while the nature and the texture of the phases were studied using X-ray pole figures and transmission electron microscopy. The phase sequence is characterized by the formation of a single transient phase before NiGe forms as the final and stable phase. X-ray pole figures were used to unambiguously identify the transient phase as the ϵ-phase, a non-stoichiometric Ni-rich germanide withmore » a hexagonal crystal structure that can exist for Ge concentrations between 34% and 48% and which forms with a different epitaxial texture on both substrate orientations. The complementary information gained from both RBS and X-ray pole figure measurements revealed a simultaneous growth of both the ϵ-phase and NiGe over a small temperature window on both substrate orientations.« less

Advanced techniques for characterization of ion beam modified materials

DOE PAGES

Zhang, Yanwen; Debelle, Aurélien; Boulle, Alexandre; ...

2014-10-30

Understanding the mechanisms of damage formation in materials irradiated with energetic ions is essential for the field of ion-beam materials modification and engineering. Utilizing incident ions, electrons, photons, and positrons, various analysis techniques, including Rutherford backscattering spectrometry (RBS), electron RBS, Raman spectroscopy, high-resolution X-ray diffraction, small-angle X-ray scattering, and positron annihilation spectroscopy, are routinely used or gaining increasing attention in characterizing ion beam modified materials. The distinctive information, recent developments, and some perspectives in these techniques are reviewed in this paper. Applications of these techniques are discussed to demonstrate their unique ability for studying ion-solid interactions and the corresponding radiationmore » effects in modified depths ranging from a few nm to a few tens of μm, and to provide information on electronic and atomic structure of the materials, defect configuration and concentration, as well as phase stability, amorphization and recrystallization processes. Finally, such knowledge contributes to our fundamental understanding over a wide range of extreme conditions essential for enhancing material performance and also for design and synthesis of new materials to address a broad variety of future energy applications.« less

Studies on interface between In2O3 and CuInTe2 thin films

NASA Astrophysics Data System (ADS)

Ananthan, M. R.; Malar, P.; Osipowicz, Thomas; Kasiviswanathan, S.

2017-10-01

Interface between dc sputtered In2O3 and stepwise flash evaporated CuInTe2 films were studied by probing Si/In2O3/CuInTe2 and Si/CuInTe2/In2O3 structures with the help of glancing angle X-ray diffraction, Rutherford backscattering spectrometry and micro-Raman spectroscopy. The results showed that in Si/In2O3/CuInTe2 structure, a ∼20 nm thick interface consisting of In, Cu and O had formed between In2O3 and CuInTe2 and was attributed to the diffusion of Cu from CuInTe2 into In2O3 film. On the other hand, in Si/CuInTe2/In2O3 structure, homogeneity of the underlying CuInTe2 film was found lost completely. An estimate of the masses of the constituent elements showed that the damage was caused by loss of Te from CuInTe2 film during the growth of In2O3 film on Si/CuInTe2.

Study of electronic sputtering of CaF2 thin films

NASA Astrophysics Data System (ADS)

Pandey, Ratnesh K.; Kumar, Manvendra; Khan, Saif A.; Kumar, Tanuj; Tripathi, Ambuj; Avasthi, D. K.; Pandey, Avinash C.

2014-01-01

In the present work thin films of CaF2 deposited on Si substrate by electron beam evaporation have been investigated for swift heavy ions induced sputtering and surface modifications. Glancing angle X-ray Diffraction (GAXRD) measurements show that the pristine films are polycrystalline in nature and the grain size increases with increase in film thickness. Rutherford backscattering spectrometry (RBS) of pristine as well as irradiated films was performed to determine the sputter yield of CaF2 and a decrease in sputter yield has been observed with increase in film thickness. Thermal spike model has been applied to explain this. The confinement of energy in the grains having size smaller than the electron mean free path (λ) results in a higher sputtering yield. Atomic force microscopy (AFM) studies of irradiated CaF2 thin films show formation of cracks on film surface at a fluence of 5 × 1012 ions/cm2. Also RBS results confirm the removal of film from the surface and more exposure of substrate with increasing dose of ions.

Structure, Morphology, and Optical Properties of Amorphous and Nanocrystalline Gallium Oxide Thin Films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kumar, S. Sampath; Rubio, E. J.; Noor-A-Alam, M.

Ga2O3 thin films were produced by sputter deposition by varying the substrate temperature (Ts) in a wide range (Ts=25-800 oC). The structural characteristics and optical properties of Ga2O3 films were evaluated using X-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive X-ray spectrometry (EDS), Rutherford backscattering spectrometry (RBS) and spectrophotometric measurements. The effect of growth temperature is significant on the chemistry, crystal structure and morphology of Ga2O3 films. XRD and SEM analyses indicate that the Ga2O3 films grown at lower temperatures were amorphous while those grown at Ts≥500 oC were nanocrystalline. RBS measurements indicate the well-maintained stoichiometry of Ga2O3 films atmore » Ts=300-700 oC. The spectral transmission of the films increased with increasing temperature. The band gap of the films varied from 4.96 eV to 5.17 eV for a variation in Ts in the range 25-800 oC. A relationship between microstructure and optical property is discussed.« less

Ion-beam mixed ultra-thin cobalt suicide (CoSi2) films by cobalt sputtering and rapid thermal annealing

NASA Astrophysics Data System (ADS)

Kal, S.; Kasko, I.; Ryssel, H.

1995-10-01

The influence of ion-beam mixing on ultra-thin cobalt silicide (CoSi2) formation was investigated by characterizing the ion-beam mixed and unmixed CoSi2 films. A Ge+ ion-implantation through the Co film prior to silicidation causes an interface mixing of the cobalt film with the silicon substrate and results in improved silicide-to-silicon interface roughness. Rapid thermal annealing was used to form Ge+ ion mixed and unmixed thin CoSi2 layer from 10 nm sputter deposited Co film. The silicide films were characterized by secondary neutral mass spectroscopy, x-ray diffraction, tunneling electron microscopy (TEM), Rutherford backscattering, and sheet resistance measurements. The experi-mental results indicate that the final rapid thermal annealing temperature should not exceed 800°C for thin (<50 nm) CoSi2 preparation. A comparison of the plan-view and cross-section TEM micrographs of the ion-beam mixed and unmixed CoSi2 films reveals that Ge+ ion mixing (45 keV, 1 × 1015 cm-2) produces homogeneous silicide with smooth silicide-to-silicon interface.

Microstructural, mechanical and optical properties research of a carbon ion-irradiated Y 2SiO 5 crystal

DOE PAGES

Song, Hong-Lian; Yu, Xiao-Fei; Huang, Qing; ...

2017-01-28

Ion irradiation has been a popular method to modify properties of different kinds of materials. Ion-irradiated crystals have been studied for years, but the effects on microstructure and optical properties during irradiation process are still controversial. In this study, we used 6 MeV C ions with a fluence of 1 × 10 15 ion/cm 2 irradiated Y 2SiO 5 (YSO) crystal at room temperature, and discussed the influence of C ion irradiation on the microstructure, mechanical and optical properties of YSO crystal by Rutherford backscattering/channeling analyzes (RBS/C), X-ray diffraction patterns (XRD), Raman, nano-indentation test, transmission and absorption spectroscopy, the prismmore » coupling and the end-facet coupling experiments. We also used the secondary ion mass spectrometry (SIMS) to analyze the elements distribution along sputtering depth. Finally, 6 MeV C ions with a fluence of 1 × 10 15 ion/cm 2 irradiated caused the deformation of YSO structure and also influenced the spectral properties and lattice vibrations.« less

Composition and luminescence studies of InGaN epilayers grown at different hydrogen flow rates

NASA Astrophysics Data System (ADS)

Taylor, E.; Fang, F.; Oehler, F.; Edwards, P. R.; Kappers, M. J.; Lorenz, K.; Alves, E.; McAleese, C.; Humphreys, C. J.; Martin, R. W.

2013-06-01

Indium gallium nitride (InxGa1 - xN) is a technologically important material for many optoelectronic devices, including LEDs and solar cells, but it remains a challenge to incorporate high levels of InN into the alloy while maintaining sample quality. A series of InGaN epilayers was grown with different hydrogen flow rates (0-200 sccm) and growth temperatures (680-750 °C) to obtain various InN fractions and bright emission in the range 390-480 nm. These 160-nm thick epilayers were characterized through several compositional techniques (wavelength dispersive x-ray spectroscopy, x-ray diffraction, Rutherford backscattering spectrometry) and cathodoluminescence hyperspectral imaging. The compositional analysis with the different techniques shows good agreement when taking into account compositional gradients evidenced in these layers. The addition of small amounts of hydrogen to the gas flow at lower growth temperatures is shown to maintain a high surface quality and luminescence homogeneity. This allowed InN fractions of up to ˜16% to be incorporated with minimal peak energy variations over a mapped area while keeping a high material quality.

Emerging surface characterization techniques for carbon steel corrosion: a critical brief review

PubMed Central

Dwivedi, D.; Becker, T.

2017-01-01

Carbon steel is a preferred construction material in many industrial and domestic applications, including oil and gas pipelines, where corrosion mitigation using film-forming corrosion inhibitor formulations is a widely accepted method. This review identifies surface analytical techniques that are considered suitable for analysis of thin films at metallic substrates, but are yet to be applied to analysis of carbon steel surfaces in corrosive media or treated with corrosion inhibitors. The reviewed methods include time of flight-secondary ion mass spectrometry, X-ray absorption spectroscopy methods, particle-induced X-ray emission, Rutherford backscatter spectroscopy, Auger electron spectroscopy, electron probe microanalysis, near-edge X-ray absorption fine structure spectroscopy, X-ray photoemission electron microscopy, low-energy electron diffraction, small-angle neutron scattering and neutron reflectometry, and conversion electron Moessbauer spectrometry. Advantages and limitations of the analytical methods in thin-film surface investigations are discussed. Technical parameters of nominated analytical methods are provided to assist in the selection of suitable methods for analysis of metallic substrates deposited with surface films. The challenges associated with the applications of the emerging analytical methods in corrosion science are also addressed. PMID:28413351

Purity of targets prepared on Cu substrates

NASA Astrophysics Data System (ADS)

Méens, A.; Rossini, I.; Sens, J. C.

1993-09-01

The purity of several elemental self-supporting targets usually prepared by evaporation onto soluble Cu substrates has been studied. The targets were analysed by Rutherford backscattering and instrumental neutron activation analysis. Because of the high percentage of Cu observed in some Si targets, further measurements, including transmission electron microscopy, have been performed on Si targets deposited by e-gun bombardment onto Cu and ion-beam sputtering onto betaine.

Effect of crystallographic orientation on structural and mechanical behaviors of Ni-Ti thin films irradiated by Ag7+ ions

NASA Astrophysics Data System (ADS)

Kumar, Veeresh; Singhal, Rahul

2018-04-01

In the present study, thin films of Ni-Ti shape memory alloy have been grown on Si substrate by dc magnetron co-sputtering technique using separate sputter targets Ni and Ti. The prepared thin films have been irradiated by 100 MeV Ag7+ ions at three different fluences, which are 1 × 1012, 5 × 1012, and 1 × 1013 ions/cm2. The elemental composition and depth profile of pristine film have been investigated by Rutherford backscattering spectrometry. The changes in crystal orientation, surface morphology, and mechanical properties of Ni-Ti thin films before and after irradiation have been studied by X-ray diffraction, atomic force microscopy, field-emission scanning electron microscopy, and nanoindentation techniques, respectively. X-ray diffraction measurement has revealed the existence of both austenite and martensite phases in pristine film and the formation of precipitate on the surface of the film after irradiation at an optimized fluence of 1 × 1013 ions/cm2. Nanoindentation measurement has revealed improvement in mechanical properties of Ni-Ti thin films after ion irradiation via increasing hardness and Young modulus due to the formation of precipitate and ductile phase. The improvement in mechanical behavior could be explained in terms of precipitation hardening and structural change of Ni-Ti thin film after irradiation by Swift heavy ion irradiation.

Measuring the stopping power of α particles in compact bone for BNCT

NASA Astrophysics Data System (ADS)

Provenzano, L.; Rodríguez, L. M.; Fregenal, D.; Bernardi, G.; Olivares, C.; Altieri, S.; Bortolussi, S.; González, S. J.

2015-01-01

The stopping power of α particles in thin films of decalcified sheep femur, in the range of 1.5 to 5.0 MeV incident energy, was measured by transmission of a backscattered beam from a heavy target. Additionally, the film elemental composition was determined by Rutherford Backscattering Spectrometry (RBS). These data will be used to measure boron concentration in thin films of bone using a spectrometry technique developed by the University of Pavia, since the concentration ratio between healthy tissue and tumor is of fundamental importance in Boron Neutron Capture Therapy (BNCT). The present experimental data are compared with numerical simulation results and with tabulated stopping power data of non-decalcified human bone.

Nondestructive atomic compositional analysis of BeMgZnO quaternary alloys using ion beam analytical techniques

NASA Astrophysics Data System (ADS)

Zolnai, Z.; Toporkov, M.; Volk, J.; Demchenko, D. O.; Okur, S.; Szabó, Z.; Özgür, Ü.; Morkoç, H.; Avrutin, V.; Kótai, E.

2015-02-01

The atomic composition with less than 1-2 atom% uncertainty was measured in ternary BeZnO and quaternary BeMgZnO alloys using a combination of nondestructive Rutherford backscattering spectrometry with 1 MeV He+ analyzing ion beam and non-Rutherford elastic backscattering experiments with 2.53 MeV energy protons. An enhancement factor of 60 in the cross-section of Be for protons has been achieved to monitor Be atomic concentrations. Usually the quantitative analysis of BeZnO and BeMgZnO systems is challenging due to difficulties with appropriate experimental tools for the detection of the light Be element with satisfactory accuracy. As it is shown, our applied ion beam technique, supported with the detailed simulation of ion stopping, backscattering, and detection processes allows of quantitative depth profiling and compositional analysis of wurtzite BeZnO/ZnO/sapphire and BeMgZnO/ZnO/sapphire layer structures with low uncertainty for both Be and Mg. In addition, the excitonic bandgaps of the layers were deduced from optical transmittance measurements. To augment the measured compositions and bandgaps of BeO and MgO co-alloyed ZnO layers, hybrid density functional bandgap calculations were performed with varying the Be and Mg contents. The theoretical vs. experimental bandgaps show linear correlation in the entire bandgap range studied from 3.26 eV to 4.62 eV. The analytical method employed should help facilitate bandgap engineering for potential applications, such as solar blind UV photodetectors and heterostructures for UV emitters and intersubband devices.

Lateral diffusion study of the Pt-Al system using the NAC nuclear microprobe.

NASA Astrophysics Data System (ADS)

de Waal, H.; Pretorius, R.

1999-10-01

In this study a nuclear microprobe (NMP) was used to analyse phase formation during reaction in Pt-Al lateral diffusion couples. Phase identification was done by Rutherford backscattering spectroscopy. These results were compared with phase formation during conventional thin film Pt-Al interactions. The co-existence of multiple phases in lateral diffusion couples is discussed with reference to the effective heat of formation (EHF) model.

Comments on the paper "Bragg's law diffraction simulations for electron backscatter diffraction analysis" by Josh Kacher, Colin Landon, Brent L. Adams & David Fullwood.

PubMed

Maurice, Claire; Fortunier, Roland; Driver, Julian; Day, Austin; Mingard, Ken; Meaden, Graham

2010-06-01

This comment on the paper "Bragg's Law diffraction simulations for electron backscatter diffraction analysis" by Kacher et al. explains the limitations in determining elastic strains using synthetic EBSD patterns. Of particular importance are those due to the accuracy of determination of the EBSD geometry projection parameters. Additional references and supporting information are provided. Copyright 2010 Elsevier B.V. All rights reserved.

Interference phenomena at backscattering by ice crystals of cirrus clouds.

PubMed

Borovoi, Anatoli; Kustova, Natalia; Konoshonkin, Alexander

2015-09-21

It is shown that light backscattering by hexagonal ice crystals of cirrus clouds is formed within the physical-optics approximation by both diffraction and interference phenomena. Diffraction determines the angular width of the backscattering peak and interference produces the interference rings inside the peak. By use of a simple model for distortion of the pristine hexagonal shape, we show that the shape distortion leads to both oscillations of the scattering (Mueller) matrix within the backscattering peak and to a strong increase of the depolarization, color, and lidar ratios needed for interpretation of lidar signals.

Backscattering measurement of 6He on 209Bi: Critical interaction distance

NASA Astrophysics Data System (ADS)

Guimarães, V.; Kolata, J. J.; Aguilera, E. F.; Howard, A.; Roberts, A.; Becchetti, F. D.; Torres-Isea, R. O.; Riggins, A.; Febrarro, M.; Scarduelli, V.; de Faria, P. N.; Monteiro, D. S.; Huiza, J. F. P.; Arazi, A.; Hinnefeld, J.; Moro, A. M.; Rossi, E. S.; Morcelle, V.; Barioni, A.

2016-06-01

An elastic backscattering experiment has been performed at energies below the Coulomb barrier to investigate static and dynamic effects in the interaction of 6He with 209Bi. The measured cross sections are presented in terms of the d σ /d σR u t h ratio, as a function of the distance of closest approach on a Rutherford trajectory. The data are compared with a three-body CDCC calculation and good agreement is observed. In addition, the critical distance of interaction was extracted. A larger value was obtained for the exotic 6He nucleus as compared with the weakly bound 6Li and 9Be nuclei and the tightly bound 4He12C, and 16O nuclei.

Sputtering Yields of Si and Ni from the Ni1-xSix System Studied by Rutherford Backscattering Spectrometry

NASA Astrophysics Data System (ADS)

Kim, Su Chol; Yamaguchi, Satoru; Kataoka, Yoshihide; Iwami, Motohiro; Hiraki, Akio; Satou, Mamoru; Fujimoto, Fuminori

1982-01-01

Sputtering yields of Si and Ni from thin layer films of Ni-Si compounds (Ni1-xSix), including the pure materials (Ni and Si), caused by 5 keV Ar+ ion bombardment were investigated using backscattering spectrometry. The sputtering yield for Si from Ni1-xSix increased with increasing Si concentration. However, there is an abrupt decrease in the yield for Si concentrations above NiSi2 to pure Si. This is in clear contrast to the sputtering yield of Ni from Ni1-xSix which increased with increasing Ni concentration monotonously. These results are discussed on the basis of both the difference in the atomic density and the electronic state of the alloy.

Enhancement of the giant magnetoresistance in spin valves via oxides formed from magnetic layers

NASA Astrophysics Data System (ADS)

Gillies, M. F.; Kuiper, A. E. T.

2000-11-01

An enhancement of the giant magnetoresistance effect is investigated in spin valves where oxide layers, which are formed from magnetic layers, are incorporated in the structure. Information about Co-Fe based nanooxide layer (NOL) is obtained via x-ray photoelectron spectroscopy and Rutherford backscattering spectrometry. Cross-section transmission electron microscopy is also used to explore the effect of an NOL on the polycrystalline structure of the spin valve.

Diffraction effects and inelastic electron transport in angle-resolved microscopic imaging applications.

PubMed

Winkelmann, A; Nolze, G; Vespucci, S; Naresh-Kumar, G; Trager-Cowan, C; Vilalta-Clemente, A; Wilkinson, A J; Vos, M

2017-09-01

We analyse the signal formation process for scanning electron microscopic imaging applications on crystalline specimens. In accordance with previous investigations, we find nontrivial effects of incident beam diffraction on the backscattered electron distribution in energy and momentum. Specifically, incident beam diffraction causes angular changes of the backscattered electron distribution which we identify as the dominant mechanism underlying pseudocolour orientation imaging using multiple, angle-resolving detectors. Consequently, diffraction effects of the incident beam and their impact on the subsequent coherent and incoherent electron transport need to be taken into account for an in-depth theoretical modelling of the energy- and momentum distribution of electrons backscattered from crystalline sample regions. Our findings have implications for the level of theoretical detail that can be necessary for the interpretation of complex imaging modalities such as electron channelling contrast imaging (ECCI) of defects in crystals. If the solid angle of detection is limited to specific regions of the backscattered electron momentum distribution, the image contrast that is observed in ECCI and similar applications can be strongly affected by incident beam diffraction and topographic effects from the sample surface. As an application, we demonstrate characteristic changes in the resulting images if different properties of the backscattered electron distribution are used for the analysis of a GaN thin film sample containing dislocations. © 2017 The Authors. Journal of Microscopy published by JohnWiley & Sons Ltd on behalf of Royal Microscopical Society.

Heteroepitaxial growth of Ba1 - xSrxTiO3/YBa2Cu3O7 - x by plasma-enhanced metalorganic chemical vapor deposition

NASA Astrophysics Data System (ADS)

Chern, C. S.; Liang, S.; Shi, Z. Q.; Yoon, S.; Safari, A.; Lu, P.; Kear, B. H.; Goodreau, B. H.; Marks, T. J.; Hou, S. Y.

1994-06-01

Epitaxial Ba1-xSrxTiO3(BST)/YBa2Cu3O7-x heterostructures with superior electrical and dielectric properties have been fabricated by plasma-enhanced metalorganic chemical vapor deposition (PE-MOCVD). Data of x-ray diffraction and high resolution transmission electron microscopy showed that <100> oriented Ba1-xSrxTiO3 layers were epitaxially deposited on epitaxial (001) YBa2Cu3O7-x layers. The leakage current density through the Ba1-xSrxTiO3 films was about 10-7 A/cm2 at 2 V (about 2×105 V/cm) operation. Moreover, the results of capacitance-temperature measurements showed that the PE-MOCVD Ba1-xSrxTiO3 films had Curie temperatures of about 30 °C and a peak dielectric constant of 600 at zero bias voltage. The Rutherford backscattering spectrometry and x-ray diffraction results showed that the BST film composition was controlled between Ba0.75Sr0.25TiO3 and Ba0.8Sr0.2TiO3. The structural and electrical properties of the Ba1-xSrxTiO3/YBa2Cu3O7-x heterostructure indicated that conductive oxide materials with close lattice to Ba1-xSrxTiO3 can be good candidates for the bottom electrode.

Growth and surface modification of LaFeO3 thin films induced by reductive annealing

NASA Astrophysics Data System (ADS)

Flynn, Brendan T.; Zhang, Kelvin H. L.; Shutthanandan, Vaithiyalingam; Varga, Tamas; Colby, Robert J.; Oleksak, Richard P.; Manandhar, Sandeep; Engelhard, Mark H.; Chambers, Scott A.; Henderson, Michael A.; Herman, Gregory S.; Thevuthasan, Suntharampillai

2015-03-01

The mixed electronic and ionic conductivity of perovskite oxides has enabled their use in diverse applications such as automotive exhaust catalysts, solid oxide fuel cell cathodes, and visible light photocatalysts. The redox chemistry at the surface of perovskite oxides is largely dependent on the oxidation state of the metal cations as well as the oxide surface stoichiometry. In this study, LaFeO3 (LFO) thin films grown on yttria-stabilized zirconia (YSZ) was characterized using both bulk and surface sensitive techniques. A combination of in situ reflection high-energy electron diffraction (RHEED), X-ray diffraction (XRD), and Rutherford backscattering spectrometry (RBS) demonstrated that the film is primarily textured in the [1 0 0] direction and is stoichiometric. High-resolution transmission electron microscopy measurements show regions that are dominated by [1 0 0] oriented LFO grains that are oriented with respect to the substrates lattice. However, selected regions of the film show multiple domains of grains that are not [1 0 0] oriented. The film was annealed in an ultra-high vacuum chamber to simulate reducing conditions and studied by angle-resolved X-ray photoelectron spectroscopy (XPS). Iron was found to exist as Fe(0), Fe(II), and Fe(III) depending on the annealing conditions and the depth within the film. A decrease in the concentration of surface oxygen species was correlated with iron reduction. These results should help guide and enhance the design of LFO materials for catalytic applications.

Electromagnetic backscattering by corner reflectors

NASA Technical Reports Server (NTRS)

Balanis, C. A.; Griesser, T.

1986-01-01

The Geometrical Theory of Diffraction (GTD), which supplements Geometric Optics (GO), and the Physical Theory of Diffraction (PTD), which supplements Physical Optics (PO), are used to predict the backscatter cross sections of dihedral corner reflectors which have right, obtuse, or acute included angles. These theories allow individual backscattering mechanisms of the dihedral corner reflectors to be identified and provide good agreement with experimental results in the azimuthal plane. The advantages and disadvantages of the geometrical and physical theories are discussed in terms of their accuracy, usefulness, and complexity. Numerous comparisons of analytical results with experimental data are presented. While physical optics alone is more accurate and more useful than geometrical optics alone, the combination of geometrical optics and geometrical diffraction seems to out perform physical optics and physical diffraction when compared with experimental data, especially for acute angle dihedral corner reflectors.

Synthesis of cobalt nanoparticles on Si (100) by swift heavy ion irradiation

PubMed Central

2013-01-01

We report the growth and characterization of uniform-sized nanoparticles of cobalt on n-type silicon (100) substrates by swift heavy ion (SHI) irradiation. The Co thin films of 25-nm thicknesses were grown by e-beam evaporation and irradiated with two different types of ions, 45-MeV Li3+ and 100-MeV O7+ ions with fluences ranging from 1 × 1011 to 1 × 1013 ions/cm2. SHI irradiation, with the beam rastered over the area of the film, resulted in the restructuring of the film into a dense array of Co nanostructures. Surface topography studied by atomic force microscopy revealed narrowed size distributions, with particle sizes ranging from 20 to 50 nm, formed through a self-organized process. Ion fluence-dependent changes in crystallinity of the Co nanostructures were determined by glancing angle X-ray diffraction. Rutherford backscattering spectroscopy analysis showed the absence of beam-induced mixing in this system. Surface restructuring and beam-induced crystallization are the dominant effects, with the nanoparticle size and density being dependent on the ion fluence. Results are analyzed in the context of molecular dynamics calculations of electron-lattice energy transfer. PMID:24138985

Comparison of the structural properties of Zn-face and O-face single crystal homoepitaxial ZnO epilayers grown by RF-magnetron sputtering

NASA Astrophysics Data System (ADS)

Schifano, R.; Riise, H. N.; Domagala, J. Z.; Azarov, A. Yu.; Ratajczak, R.; Monakhov, E. V.; Venkatachalapathy, V.; Vines, L.; Chan, K. S.; Wong-Leung, J.; Svensson, B. G.

2017-01-01

Homoepitaxial ZnO growth is demonstrated from conventional RF-sputtering at 400 °C on both Zn and O polar faces of hydrothermally grown ZnO substrates. A minimum yield for the Rutherford backscattering and channeling spectrum, χmin, equal to ˜3% and ˜12% and a full width at half maximum of the 00.2 diffraction peak rocking curve of (70 ± 10) arc sec and (1400 ± 100) arc sec have been found for samples grown on the Zn and O face, respectively. The structural characteristics of the film deposited on the Zn face are comparable with those of epilayers grown by more complex techniques like molecular beam epitaxy. In contrast, the film simultaneously deposited on the O-face exhibits an inferior crystalline structure ˜0.7% strained in the c-direction and a higher atomic number contrast compared with the substrate, as revealed by high angle annular dark field imaging measurements. These differences between the Zn- and O-face films are discussed in detail and associated with the different growth mechanisms prevailing on the two surfaces.

Hafnia-based resistive switching devices for non-volatile memory applications and effects of gamma irradiation on device performance

NASA Astrophysics Data System (ADS)

Arun, N.; Kumar, K. Vinod; Pathak, A. P.; Avasthi, D. K.; Nageswara Rao, S. V. S.

2018-04-01

Non-volatile memory (NVM) devices were fabricated as a Metal- Insulator-Metal (MIM) structures by sandwiching Hafnium dioxide (HfO2) thin film in between two metal electrodes. The top and bottom metal electrodes were deposited by using the thermal evaporation, and the oxide layer was deposited by using the RF magnetron sputtering technique. The Resistive Random Access Memory (RRAM) device structures such as Ag/HfO2/Au/Si were fabricated and I-V characteristics for the pristine and gamma-irradiated devices with a dose 24 kGy were measured. Further we have studied the thermal annealing effects, in the range of 100°-400°C in a tubular furnace for the HfO2/Au/Si samples. The X-ray diffraction (XRD), Rutherford Backscattering Spectrometry (RBS), field emission-scanning electron microscopy (FESEM) analysis measurements were performed to determine the thickness, crystallinity and stoichiometry of these films. The electrical characteristics such as resistive switching, endurance, retention time and switching speed were measured by a semiconductor device analyser. The effects of gamma irradiation on the switching properties of these RRAM devices have been studied.

The structural and optical properties of high-Al-content AlInGaN epilayers grown by RF-MBE

NASA Astrophysics Data System (ADS)

Wang, Baozhu; An, Tao; Wen, Huanming; Wu, Ruihong; An, Shengbiao; Zhang, Xiuqing; Wang, Xiaoliang

2008-11-01

AlInGaN Quaternary Alloys were successfully grown on sapphire substrate by radio-frequency plasma-excited molecular beam epitaxy (RF-MBE). Different Al content AlInGaN quaternary alloys were acquired by changing the Al cell's temperature. The streaky RHEED pattern observed during AlInGaN growth showed the layer-by-layer growth mode. Rutherford back-scattering spectrometry (RBS), X-Ray diffraction (XRD) and Cathodoluminescence (CL) were used to characterize the structural and optical properties of the AlInGaN alloys. The experimental results show that the AlInGaN with appropriate Al cell's temperature, could acquire Al/In ratio near 4.7, then could acquire better crystal and optical quality. The samllest X-ray and CL full-width at half-maximum (FWHM) of the AlInGaN are 5arcmin and 25nm, respectivly. There are some cracks and V-defects occur in high-Al/In-ratio AlInGaN alloys. In the CL image, the cracks and V-defect regions are the emission-enhanced regions. The emission enhancement of the cracked and V-defect regions may be related to the In-segregation.

X-ray magnetic spectroscopy of MBE-grown Mn-doped Bi{sub 2}Se{sub 3} thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Collins-McIntyre, L. J.; Watson, M. D.; Zhang, S. L.

2014-12-15

We report the growth of Mn-doped Bi{sub 2}Se{sub 3} thin films by molecular beam epitaxy (MBE), investigated by x-ray diffraction (XRD), atomic force microscopy (AFM), SQUID magnetometry and x-ray magnetic circular dichroism (XMCD). Epitaxial films were deposited on c-plane sapphire substrates by co-evaporation. The films exhibit a spiral growth mechanism typical of this material class, as revealed by AFM. The XRD measurements demonstrate a good crystalline structure which is retained upon doping up to ∼7.5 atomic-% Mn, determined by Rutherford backscattering spectrometry (RBS), and show no evidence of the formation of parasitic phases. However an increasing interstitial incorporation of Mnmore » is observed with increasing doping concentration. A magnetic moment of 5.1 μ{sub B}/Mn is obtained from bulk-sensitive SQUID measurements, and a much lower moment of 1.6 μ{sub B}/Mn from surface-sensitive XMCD. At ∼2.5 K, XMCD at the Mn L{sub 2,3} edge, reveals short-range magnetic order in the films and indicates ferromagnetic order below 1.5 K.« less

Microstructural response of InGaN to swift heavy ion irradiation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, L. M.; Jiang, W.; Fadanelli, R. C.

2016-12-01

A monocrystalline In0.18Ga0.82N film of ~275 nm in thickness grown on a GaN/Al 2O 3 substrate was irradiated with 290 MeV 238U 32+ ions to a fluence of 1.2 x 12 cm -2 at room temperature. The irradiated sample was characterized using helium ion microscopy (HIM), Rutherford backscattering spectrometry under ion-channeling conditions (RBS/C), and high-resolution x-ray diffraction (HRXRD). The irradiation leads to formation of ion tracks throughout the thin In 0.18Ga 0.82N film and the 3.0 µm thick GaN buffer layer. The mean diameter of the tracks in In 0.18Ga 0.82N is ~9 nm, as determined by HIM examination. Combinationmore » of the HIM and RBS/C data suggests that the material in the track is likely to be highly disordered or fully amorphized, in contrast to a crystalline structure within the ion track in GaN. Lattice relaxation in In0.18Ga0.82N and a distribution of d-spacing of the (0002) planes in GaN with lattice expansion are observed after irradiation.« less

Structural characterization of ultrathin Cr-doped ITO layers deposited by double-target pulsed laser ablation

NASA Astrophysics Data System (ADS)

Cesaria, Maura; Caricato, Anna Paola; Leggieri, Gilberto; Luches, Armando; Martino, Maurizio; Maruccio, Giuseppe; Catalano, Massimo; Grazia Manera, Maria; Rella, Roberto; Taurino, Antonietta

2011-09-01

In this paper we report on the growth and structural characterization of very thin (20 nm) Cr-doped ITO films, deposited at room temperature by double-target pulsed laser ablation on amorphous silica substrates. The role of Cr atoms in the ITO matrix is carefully investigated with increasing doping content by transmission electron microscopy (TEM). Selected-area electron diffraction, conventional bright field and dark field as well as high-resolution TEM analyses, and energy dispersive x-ray spectroscopy demonstrate that (i) crystallization features occur despite the low growth temperature and small thickness, (ii) no chromium or chromium oxide secondary phases are detectable, regardless of the film doping levels, (iii) the films crystallize as crystalline flakes forming large-angle grain boundaries; (iv) the observed flakes consist of crystalline planes with local bending of the crystal lattice. Thickness and compositional information about the films are obtained by Rutherford back-scattering spectrometry. Results are discussed by considering the combined effects of growth temperature, smaller ionic radius of the Cr cation compared with the trivalent In ion, doping level, film thickness, the double-target doping technique and peculiarities of the pulsed laser deposition method.

Enhanced sensitivity in non-enzymatic glucose detection by improved growth kinetics of Ni-based nanostructures.

PubMed

Urso, M; Pellegrino, G; Strano, V; Bruno, E; Priolo, F; Mirabella, S

2018-04-20

Ni-based nanostructures are attractive catalytic materials for many electrochemical applications, among which are non-enzymatic sensing, charge storage, and water splitting. In this work, we clarify the synthesis kinetics of Ni(OH) 2 /NiOOH nanowalls grown by chemical bath deposition at room temperature and at 50 °C. We applied the results to non-enzymatic glucose sensing, reaching a highest sensitivity of 31 mA cm -2 mM -1 . Using scanning electron microscopy, x-ray diffraction analysis and Rutherford backscattering spectrometry we found that the growth occurs through two regimes: first, a quick random growth leading to disordered sheets of Ni oxy-hydroxide, followed by a slower growth of well-aligned sheets of Ni hydroxide. A high growth temperature (50 °C), leading mainly to well-aligned sheets, offers superior electrochemical properties in terms of charge storage, charge carrier transport and catalytic action, as confirmed by cyclic voltammetry and electrochemical impedance spectroscopy analyses. The reported results on the optimization and application of low-cost synthesis of these Ni-based nanostructures have a large potential for application in catalysis, (bio)sensing, and supercapacitors areas.

Processing of La(1.8)Sr(0.2)CuO4 and YBa2Cu3O7 superconducting thin films by dual-ion-beam sputtering

NASA Astrophysics Data System (ADS)

Madakson, P.; Cuomo, J. J.; Yee, D. S.; Roy, R. A.; Scilla, G.

1988-03-01

High-quality La(1.8)Sr(0.2)CuO4 and YBa2Cu3O7 superconducting thin films, with zero resistance at 88 K, have been made by dual-ion-beam sputtering of metal and oxide targets at elevated temperatures. The films are about 1.0 micron thick and are single phase after annealing. The substrates investigated are Nd-YAP, MgO, SrF2, Si, CaF2, ZrO2-(9 pct)Y2O3, BaF2, Al2O3, and SrTiO3. Characterization of the films was carried out using Rutherford backscattering spectroscopy, resistivity measurements, TEM, X-ray diffraction, and SIMS. Substrate/film interaction was observed in every case. This generally involves diffusion of the substrate into the film, which is accompanied by, for example, the replacement of Ba by Sr in the YBa2Cu2O7 structure, in the case of SrTiO3 substrate. The best substrates were those that did not significantly diffuse into the film and which did not react chemically with the film.

Laser-deposited thin films of biocompatible ceramic

NASA Astrophysics Data System (ADS)

Jelinek, Miroslav; Olsan, V.; Jastrabik, Lubomir; Dostalova, Tatjana; Himmlova, Lucia; Kadlec, Jaromir; Pospichal, M.; Simeckova, M.; Fotakis, Costas

1995-03-01

Thin films of biocompatible materials such as hydroxylapatite (HA) - Ca10 (PO4)6(OH)2 were deposited by laser ablation technique. The films of HA were created on Ti substrates by KrF laser. The layers were deposited in vacuum, in pure H2O vapors (pressure 2 X 10-3 mbar - 2 X 10-1 mbar), and in Ar/H2O vapor mixture. Influence of laser energy density ET (3 Jcm-2, 13 Jcm-2) and substrate temperature Tg (500 degree(s)C - 760 degree(s)C) on the film parameters was studied. Two different technological processes were used for HA target preparation. Films and targets were characterized by Rutherford backscattering analysis (RBS), particle induced x-ray emission (PIXE), x-ray diffraction (XRD), scanning electron microscopy (SEM) and by Knoop microhardness and scratch test. The best crystalline HA films were reached in the mixture of Ar/H2O. Higher Tg had to be used for such deposition. Higher Tg was also preferable from the point of film microhardness. Adhesion of films to the substrates in the range of tens of Newtons was measured. The preliminary results of in vitro experiments of films biotolerance and resorbability are also presented.

Synthesis of cobalt nanoparticles on Si (100) by swift heavy ion irradiation.

PubMed

Attri, Asha; Kumar, Ajit; Verma, Shammi; Ojha, Sunil; Asokan, Kandasami; Nair, Lekha

2013-10-18

We report the growth and characterization of uniform-sized nanoparticles of cobalt on n-type silicon (100) substrates by swift heavy ion (SHI) irradiation. The Co thin films of 25-nm thicknesses were grown by e-beam evaporation and irradiated with two different types of ions, 45-MeV Li3+ and 100-MeV O7+ ions with fluences ranging from 1 × 1011 to 1 × 1013 ions/cm2. SHI irradiation, with the beam rastered over the area of the film, resulted in the restructuring of the film into a dense array of Co nanostructures. Surface topography studied by atomic force microscopy revealed narrowed size distributions, with particle sizes ranging from 20 to 50 nm, formed through a self-organized process. Ion fluence-dependent changes in crystallinity of the Co nanostructures were determined by glancing angle X-ray diffraction. Rutherford backscattering spectroscopy analysis showed the absence of beam-induced mixing in this system. Surface restructuring and beam-induced crystallization are the dominant effects, with the nanoparticle size and density being dependent on the ion fluence. Results are analyzed in the context of molecular dynamics calculations of electron-lattice energy transfer.

Synthesis of cobalt nanoparticles on Si (100) by swift heavy ion irradiation

NASA Astrophysics Data System (ADS)

Attri, Asha; Kumar, Ajit; Verma, Shammi; Ojha, Sunil; Asokan, Kandasami; Nair, Lekha

2013-10-01

We report the growth and characterization of uniform-sized nanoparticles of cobalt on n-type silicon (100) substrates by swift heavy ion (SHI) irradiation. The Co thin films of 25-nm thicknesses were grown by e-beam evaporation and irradiated with two different types of ions, 45-MeV Li3+ and 100-MeV O7+ ions with fluences ranging from 1 × 1011 to 1 × 1013 ions/cm2. SHI irradiation, with the beam rastered over the area of the film, resulted in the restructuring of the film into a dense array of Co nanostructures. Surface topography studied by atomic force microscopy revealed narrowed size distributions, with particle sizes ranging from 20 to 50 nm, formed through a self-organized process. Ion fluence-dependent changes in crystallinity of the Co nanostructures were determined by glancing angle X-ray diffraction. Rutherford backscattering spectroscopy analysis showed the absence of beam-induced mixing in this system. Surface restructuring and beam-induced crystallization are the dominant effects, with the nanoparticle size and density being dependent on the ion fluence. Results are analyzed in the context of molecular dynamics calculations of electron-lattice energy transfer.

Localized Surface Plasmon Resonance in Au Nanoparticles Embedded dc Sputtered ZnO Thin Films.

PubMed

Patra, Anuradha; Balasubrahmaniyam, M; Lahal, Ranjit; Malar, P; Osipowicz, T; Manivannan, A; Kasiviswanathan, S

2015-02-01

The plasmonic behavior of metallic nanoparticles is explicitly dependent on their shape, size and the surrounding dielectric space. This study encompasses the influence of ZnO matrix, morphology of Au nanoparticles (AuNPs) and their organization on the optical behavior of ZnO/AuNPs-ZnO/ZnO/GP structures (GP: glass plate). These structures have been grown by a multiple-step physical process, which includes dc sputtering, thermal evaporation and thermal annealing. Different analytical techniques such as scanning electron microscopy, glancing angle X-ray diffraction, Rutherford backscattering spectrometry and optical absorption have been used to study the structures. In-situ rapid thermal treatment during dc sputtering of ZnO film has been found to induce subtle changes in the morphology of AuNPs, thereby altering the profile of the plasmon band in the absorption spectra. The results have been contrasted with a recent study on the spectral response of dc magnetron sputtered ZnO films embedded with AuNPs. Initial simulation results indicate that AuNPs-ZnO/Au/GP structure reflects/absorbs UV and infrared radiations, and therefore can serve as window coatings.

Growth and Characterization of Pyrite Thin Films for Photovoltaic Applications

NASA Astrophysics Data System (ADS)

Wertheim, Alex

A series of pyrite thin films were synthesized using a novel sequential evaporation technique to study the effects of substrate temperature on deposition rate and micro-structure of the deposited material. Pyrite was deposited in a monolayer-by-monolayer fashion using sequential evaporation of Fe under high vacuum, followed by sulfidation at high S pressures (typically > 1 mTorr to 1 Torr). Thin films were synthesized using two different growth processes; a one-step process in which a constant growth temperature is maintained throughout growth, and a three-step process in which an initial low temperature seed layer is deposited, followed by a high temperature layer, and then finished with a low temperature capping layer. Analysis methods to analyze the properties of the films included Glancing Angle X-Ray Diffraction (GAXRD), Rutherford Back-scattering Spectroscopy (RBS), Transmission Electron Microscopy (TEM), Secondary Ion Mass Spectroscopy (SIMS), 2-point IV measurements, and Hall effect measurements. Our results show that crystallinity of the pyrite thin film improves and grain size increases with increasing substrate temperature. The sticking coefficient of Fe was found to increase with increasing growth temperature, indicating that the Fe incorporation into the growing film is a thermally activated process.

Ultrathin NiGe films prepared via catalytic solid-vapor reaction of Ni with GeH(4).

PubMed

Peter, Antony P; Opsomer, Karl; Adelmann, Christoph; Schaekers, Marc; Meersschaut, Johan; Richard, Olivier; Vaesen, Inge; Moussa, Alain; Franquet, Alexis; Zsolt, Tokei; Van Elshocht, Sven

2013-10-09

A low-temperature (225-300 °C) solid-vapor reaction process is reported for the synthesis of ultrathin NiGe films (∼6-23 nm) on 300 mm Si wafers covered with thermal oxide. The films were prepared via catalytic chemical vapor reaction of germane (GeH4) gas with physical vapor deposited (PVD) Ni films of different thickness (2-10 nm). The process optimization by investigating GeH4 partial pressure, reaction temperature, and time shows that low resistive, stoichiometric, and phase pure NiGe films can be formed within a broad window. NiGe films crystallized in an orthorhombic structure and were found to exhibit a smooth morphology with homogeneous composition as evidenced by glancing angle X-ray diffraction (GIXRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), and Rutherford back-scattering (RBS) analysis. Transmission electron microscopy (TEM) analysis shows that the NiGe layers exhibit a good adhesion without voids and a sharp interface on the thermal oxide. The NiGe films were found to be morphologically and structurally stable up to 500 °C and exhibit a resistivity value of 29 μΩ cm for 10 nm NiGe films.

Microstructural response of InGaN to swift heavy ion irradiation

NASA Astrophysics Data System (ADS)

Zhang, L. M.; Jiang, W.; Fadanelli, R. C.; Ai, W. S.; Peng, J. X.; Wang, T. S.; Zhang, C. H.

2016-12-01

A monocrystalline In0.18Ga0.82N film of ∼275 nm in thickness grown on a GaN/Al2O3 substrate was irradiated with 290 MeV 238U32+ ions to a fluence of 1.2 × 1012 cm-2 at room temperature. The irradiated sample was characterized using helium ion microscopy (HIM), Rutherford backscattering spectrometry under ion-channeling conditions (RBS/C), and high-resolution X-ray diffraction (HRXRD). The irradiation leads to formation of ion tracks throughout the thin In0.18Ga0.82N film and the 3.0 μm thick GaN buffer layer. The mean diameter of the tracks in In0.18Ga0.82N is ∼9 nm, as determined by HIM examination. Combination of the HIM and RBS/C data suggests that the In0.18Ga0.82N material in the track is likely to be highly disordered or fully amorphized. The irradiation induced lattice relaxation in In0.18Ga0.82N and a distribution of d-spacing of the (0 0 0 2) planes in GaN with lattice expansion are observed by HRXRD.

Optical, structural, and nuclear scientific studies of AlGaN with high Al composition

NASA Astrophysics Data System (ADS)

Lin, Tse Yang; Chung, Yee Ling; Li, Lin; Yao, Shude; Lee, Y. C.; Feng, Zhe Chuan; Ferguson, Ian T.; Lu, Weijie

2010-08-01

AlGaN epilayers with higher Al-compositions were grown by Metalorganic Chemical Vapor Deposition (MOCVD) on (0001) sapphire. Trimethylgallium (TMGa), trimethylaluminium (TMAl) and NH3 were used as the source precursors for Ga, Al, and N, respectively. A 25 nm AlN nucleation layer was first grown at low-temperature of 590 °C at 300 Torr. Followed, AlxGa1-xN layers were grown at 1080 °C on low-temperature AlN nucleation layers. The heterostructures were characterized by a series of techniques, including x-ray diffraction (XRD), Rutherford backscattering (RBS), photoluminescence (PL), scanning electron microscopy (SEM) and Raman scattering. Precise Al compositions were determined through XRD, RBS, and SEM combined measurements. Room Temperature Raman Scattering spectra shows three major bands from AlGaN alloys, which are AlN-like, A1 longitudinal optical (LO) phonon modes, and E2 transverse optical (TO) band, respectively, plus several peak comes from the substrate. Raman spectral line shape analysis lead to an optical determination of the electrical property free carrier concentration of AlGaN. The optical properties of AlGaN with high Al composition were presented here.

Enhanced sensitivity in non-enzymatic glucose detection by improved growth kinetics of Ni-based nanostructures

NASA Astrophysics Data System (ADS)

Urso, M.; Pellegrino, G.; Strano, V.; Bruno, E.; Priolo, F.; Mirabella, S.

2018-04-01

Ni-based nanostructures are attractive catalytic materials for many electrochemical applications, among which are non-enzymatic sensing, charge storage, and water splitting. In this work, we clarify the synthesis kinetics of Ni(OH)2/NiOOH nanowalls grown by chemical bath deposition at room temperature and at 50 °C. We applied the results to non-enzymatic glucose sensing, reaching a highest sensitivity of 31 mA cm-2mM-1. Using scanning electron microscopy, x-ray diffraction analysis and Rutherford backscattering spectrometry we found that the growth occurs through two regimes: first, a quick random growth leading to disordered sheets of Ni oxy-hydroxide, followed by a slower growth of well-aligned sheets of Ni hydroxide. A high growth temperature (50 °C), leading mainly to well-aligned sheets, offers superior electrochemical properties in terms of charge storage, charge carrier transport and catalytic action, as confirmed by cyclic voltammetry and electrochemical impedance spectroscopy analyses. The reported results on the optimization and application of low-cost synthesis of these Ni-based nanostructures have a large potential for application in catalysis, (bio)sensing, and supercapacitors areas.

Characterization of magneto-optical media

NASA Technical Reports Server (NTRS)

Hajjar, Roger A.; Wu, Te-Ho; Mansuripur, M.

1991-01-01

Amorphous rare earth-transition metal (RE-TM) alloys and compositionally modulated TM/TM films were characterized in terms of their magnetic, magneto-optic, and galvanomagnetic properties. The loop tracer, vibrating sample magnetometer (VSM), and Rutherford Backscattering (RBS) facility were used to characterize and analyze the various properties of these magneto-optical storage media. Kerr effect, ellipticity, coercivity, and anisotropy at various temperatures, magnetoresistance, and resistivity are among the properties measured in Co/Pt films, Co/Pd films, and TbFeCo films.

Influence of surface topography on RBS measurements: case studies of (Cu/Fe/Pd) multilayers and FePdCu alloys nanopatterned by self-assembly

NASA Astrophysics Data System (ADS)

Krupinski, M.; Perzanowski, M.; Zabila, Y.; Zarzycki, A.; Marszałek, M.

2017-03-01

In this paper the influence of surface topography on Rutherford backscattering spectrometry (RBS) is discussed. (Cu/Fe/Pd) multilayers with total thickness of about 10 nm were deposited by physical vapor deposition on self-organized array of SiO2 nanoparticles with the size of 50 nm and 100 nm. As a reference, the multilayered systems were also prepared on flat substrates under the same conditions. After the deposition, morphology of the systems was studied by scanning electron microscopy (SEM), while chemical analysis was performed using Rutherford backscattering spectrometry. It was found that the RBS spectra and determined compositions for flat and patterned multilayers differ. The difference is discussed by taking into account the effect of additional inelastic scattering and energy straggling occurring due to developed topography of patterned systems. Then, the multilayers were annealed in 600 °C in order to obtain FePdCu alloy. The phenomenon of solid-state dewetting resulted in the formation of isolated alloy islands on the top of SiO2 nanoparticles. The SEM and RBS analysis were repeated showing correlation between the size distribution of obtained alloy islands and broadening of peaks appearing in RBS spectra. Invited talk at 8th International Workshop on Advanced Materials Science and Nanotechnology (IWAMSN2016), 8-12 November 2016, Ha Long City, Vietnam.

Ion Beam Analysis Of Nitrogen Incorporated Ultrananocrystalline Diamond (UNCD) Thin Films

NASA Astrophysics Data System (ADS)

AlFaify, S.; Garratt, E.; Dissanayake, A.; Mancini, D. C.; Kayani, A.

2011-06-01

Determination of the elemental composition is important to correlate the properties of nitrogen incorporated Ultrananocrystalline Diamond (UNCD) thin films with their growth conditions. Films were deposited by CVD deposition technology and nitrogen incorporation was introduced by diluting the growth Ar/CH4 plasma with N2 gas. Deposition of UNCD thin films was carried out on tungsten (˜15 nm) coated Si substrates with varying concentrations of N2 diluted to the growth plasma. Scanning electron microscopy (SEM) and Raman spectroscopy (RS) were used to confirm the characteristic morphology of the UNCD film and its dominant sp3 bonding respectively. The deposited films were smooth on the submicron scale with the RMS roughness value of 2.9-5.1 nm. Reflectometry spectroscopy analysis (RES) technique was used to measure the films thicknesses. To obtain the elemental composition of the UNCD thin films, Rutherford Backscattering Spectrometry (RBS), Non-Rutherford Backscattering Spectrometry (NRBS), Elastic Recoil Detection Analysis (ERDA) and Nuclear Reaction Analysis (NRA) were performed. Deposited UNCD films contained less than 5 at.% of H while N content incorporated in the films was estimated to be lower than 1 at.%. The intermixing region between the substrate and the film was found to be negligible. Moreover, amorphous phase as determined by Raman analysis was found to be increasing for the sample deposited with N2.

Stopping cross sections for 0.25-3.0-MeV He-4 ions in cadmium sulfide

NASA Technical Reports Server (NTRS)

Miller, W. E.; Hutchby, J. A.

1975-01-01

Stopping cross sections of He-4 ions with energies between 0.25 and 3.0 MeV have been measured for cadmium sulfide with a probable error of plus or minus 7% to 8%. The experimental method utilized the Rutherford backscattering technique and measured the energy loss of elastically scattered He-4 ions from films of cadmium sulfide sputtered on carbon substrates. The experimental data are compared with recent experimental and theoretical results.

Ion Beam Analysis of Diffusion in Diamondlike Carbon Films

NASA Astrophysics Data System (ADS)

Chaffee, Kevin Paul

The van de Graaf accelerator facility at Case Western Reserve University was developed into an analytical research center capable of performing Rutherford Backscattering Spectrometry, Elastic Recoil Detection Analysis for hydrogen profiling, Proton Enhanced Scattering, and ^4 He resonant scattering for ^{16 }O profiling. These techniques were applied to the study of Au, Na^+, Cs ^+, and H_2O water diffusion in a-C:H films. The results are consistent with the fully constrained network model of the microstructure as described by Angus and Jansen.

The study of voids in the AuAl thin-film system using the nuclear microprobe

NASA Astrophysics Data System (ADS)

de Waal, H. S.; Pretorius, R.; Prozesky, V. M.; Churms, C. L.

1997-07-01

A Nuclear Microprobe (NMP) was used to study void formation in thin film gold-aluminium systems. Microprobe Rutherford Backscattering Spectrometry (μRBS) was utilised to effectively obtain a three-dimensional picture of the void structure on the scale of a few nanometers in the depth dimension and a few microns in the in-plane dimension. This study illustrates the usefulness of the NMP in the study of materials and specifically thin-film structures.

Durability of reflector materials in the space environment

NASA Technical Reports Server (NTRS)

Whitaker, Ann F.; Finckenor, Miria M.; Edwards, David; Kamenetzky, Rachel R.; Linton, Roger C.

1995-01-01

Various reflector configurations were flown as part of the Long Duration Exposure Facility (LDEF) A0171 experiment. These reflectors consisted of nickel substrates with aluminum, enhanced aluminum (multiple layers of aluminum and silver), silver, and silver alloy coatings with glassy ceramic overcoatings. These samples have been evaluated for changes in reflectance due to 5.8 years in the space environment. The reflector materials have also been evaluated using angstrometer, Rutherford backscattering (RBS), and electron spectroscopy for chemical analysis (ESCA) techniques.

Absence of solute drag in solidification

NASA Astrophysics Data System (ADS)

Kittl, J. A.; Aziz, M. J.; Brunco, D. P.; Thompson, M. O.

1994-05-01

The interface response functions for alloy solidification were measured in the nondegenerate regime of partial solute trapping. We used a new technique to measure temperatures and velocities simultaneously during rapid solidification of Si-As alloys induced by pulsed laser melting. In addition, partition coefficients were determined using Rutherford backscattering. The results are in good agreement with predictions of the Continuous Growth Model without solute drag of M. J. Aziz and T. Kaplan [Acta Metall. 36, 1335 (1988)] and are inconsistent with all solute drag models.

Studies of implanted iron in silicon by channeling and Rutherford backscattering

NASA Technical Reports Server (NTRS)

Wang, P. W.; Cheng, H. S.; Gibson, W. M.; Corbett, J. W.

1986-01-01

Different amounts of 100-keV iron ions have been implanted into high-resistivity p-type FZ-silicon samples. The implantation damage, recovery of damage during various annealing periods and temperatures, movement of iron atoms under annealing and oxidation, and the kinds of defects created after implantation, annealing, or oxidation are all investigated by channeling and backscattering measurements. It is found that the critical fluence of 100-keV iron implanted into silicon at room temperature is about 2.5 x 10 to the 14th Fe/sq cm, and that iron atoms are gettered by silicon oxidation. In this supersaturated region, iron atoms diffuse slightly towards bulk silicon during high-temperature annealing (greater than or equal to 1100 C) but not at all during low-temperature annealing (less than or equal to 1000 C) in dry nitrogen ambient.

MeV ion-beam analysis of optical data storage films

NASA Technical Reports Server (NTRS)

Leavitt, J. A.; Mcintyre, L. C., Jr.; Lin, Z.

1993-01-01

Our objectives are threefold: (1) to accurately characterize optical data storage films by MeV ion-beam analysis (IBA) for ODSC collaborators; (2) to develop new and/or improved analysis techniques; and (3) to expand the capabilities of the IBA facility itself. Using H-1(+), He-4(+), and N-15(++) ion beams in the 1.5 MeV to 10 MeV energy range from a 5.5 MV Van de Graaff accelerator, film thickness (in atoms/sq cm), stoichiometry, impurity concentration profiles, and crystalline structure were determined by Rutherford backscattering (RBS), high-energy backscattering, channeling, nuclear reaction analysis (NRA) and proton induced X-ray emission (PIXE). Most of these techniques are discussed in detail in the ODSC Annual Report (February 17, 1987), p. 74. The PIXE technique is briefly discussed in the ODSC Annual Report (March 15, 1991), p. 23.

Rutherford Backscattering Spectrometry studies of 100 keV nitrogen ion implanted polypropylene polymer

NASA Astrophysics Data System (ADS)

Chawla, Mahak; Aggarwal, Sanjeev; Sharma, Annu

2017-09-01

The effect of nitrogen ion implantation on the structure and composition in polypropylene (PP) polymer has been studied. Implantation was carried out using 100 keV N+ ions at different fluences of 1 × 1015, 1 × 1016 and 1 × 1017 ions cm-2 with beam current density of ∼0.65 μA cm-2. Surface morphological changes in the pre- and post-implanted PP specimens have been studied using Rutherford Backscattering Spectrometry (RBS) and UV-Visible Spectroscopy. The spatial distribution of implantation induced modification in the form of carbonization and dehydrogenation in the near surface region of PP matrix, the projected range, retained dose of implanted nitrogen, the various elements present in the implanted layers and their differential cross-sections have been analyzed using RBS spectra. RUMP simulation yielded an increase in the concentration of carbon near the surface from 33 at.% (virgin) to 42 at.% at fluence of 1 × 1017 N+ cm-2. Further, optical absorption has been found to increase with a shift in the absorption edge from UV towards visible region with increasing fluence. UV-Vis absorption spectra also indicate a drastic decrease in optical energy gap from 4.12 eV (virgin) to 0.25 eV (1 × 1017 N+ cm-2) indicating towards the formation of carbonaceous network in the implanted region. All these changes observed using UV-Visible have been further correlated with the outcomes of the RBS characterization.

Ion Beam Irradiation Studies Of Ultrananocrystalline Diamond (UNCD)

NASA Astrophysics Data System (ADS)

Kayani, A.; Garratt, E.; AlFaify, S.; Dissanayake, A.; Tecos, G.; Mancini, D. C.; Syed, M.

2011-06-01

Investigations into the effects of high-energy ion bombardment of ultrananocrystalline diamond (UNCD) thin films was performed using 3 and 6 MeV protons and 24 MeV F4+, with the fluence of 2.1×1017 ions/cm2, 2.9×1017 ions/cm2, and 6.7×1015 ions/cm2 respectively. Objective of the research is to investigate the effect of structural damage on the physical properties of the material and compare it with the structure of unirradiated and N doped UNCD. Pre- and post-irradiated samples were analyzed by ion beam analysis (IBA) measurements, Raman spectroscopy, atomic force microscopy (AFM) and scanning electron microscopy (SEM). IBA measurements including Rutherford backscattering spectrometry (RBS), non-Rutherford backscattering spectrometry (NRBS) and elastic recoil detection analysis (ERDA) were used to determine elemental concentration of pre- and post-irradiated samples. Visible Raman spectra corresponding to samples irradiated at 3 and 6 MeV protons did not show much variation. For 24 MeV F4+ irradiated sample, significant changes were observed, particularly the loss of a shoulder at 1179 cm-1 and sharpening of the G peak at around 1532 cm-1, indicating possible significant changes at the grain boundary and increase in sp2 phase. AFM measurements show a reduction in RMS roughness after bombardment possibly due to the graphitization of the UNCD surface. The results of IBA measurements did not show any change in the elemental concentration or interface region between film and substrate.

INTERNATIONAL CONFERENCE ON SEMICONDUCTOR INJECTION LASERS SELCO-87: Multilayer CrPtCr/NiAu ohmic contacts with p-type GaAs in heterojunction laser structures

NASA Astrophysics Data System (ADS)

Wójcik, I.; Stareev, G.; Barcz, A.; Domański, M.

1988-11-01

Multilayer CrPtCr/NiAu metallization was deposited by sputtering in a magnetron on the p-type side of GaAs in a pulsed laser heterostructure. Heat treatment at 490 °C for 3 min produced a reliable ohmic contact with a specific resistance of 10- 6-10- 5 Ω · cm2, depending on the substrate doping. Secondary-ion mass spectroscopy and Rutherford backscattering methods were used to study the mechanism of formation of a contact.

Studies of PMMA sintering foils with and without coating by magnetron sputtering Pd

NASA Astrophysics Data System (ADS)

Cutroneo, M.; Mackova, A.; Torrisi, L.; Vad, K.; Csik, A.; Ando', L.; Svecova, B.

2017-09-01

Polymethylmethacrylate thin foils were prepared by using physical and chemical processes aimed at changing certain properties. The density and the optical properties were changed obtaining clear and opaque foils. DC magnetron sputtering method was used to cover the foils with thin metallic palladium layers. The high optical absorbent foils were obtained producing microstructured PMMA microbeads with and without thin metallic coatings. Rutherford Backscattering Spectroscopy, optical investigation and microscopy were employed to characterize the prepared foils useful in the field study of laser-matter interaction.

Polycrystalline La1-xSrxMnO3 films on silicon: Influence of post-Deposition annealing on structural, (Magneto-)Optical, and (Magneto-)Electrical properties

NASA Astrophysics Data System (ADS)

Thoma, Patrick; Monecke, Manuel; Buja, Oana-Maria; Solonenko, Dmytro; Dudric, Roxana; Ciubotariu, Oana-Tereza; Albrecht, Manfred; Deac, Iosif G.; Tetean, Romulus; Zahn, Dietrich R. T.; Salvan, Georgeta

2018-01-01

The integration of La1-xSrxMnO3 (LSMO) thin film technology into established industrial silicon processes is regarded as challenging due to lattice mismatch, thermal expansion, and chemical reactions at the interface of LSMO and silicon. In this work, we investigated the physical properties of thin La0.73Sr0.27MnO3 films deposited by magnetron sputtering on silicon without a lattice matching buffer layer. The influence of a post-deposition annealing treatment on the structural, (magneto-)optical, and (magneto-)electrical properties was investigated by a variety of techniques. Using Rutherford backscattering spectroscopy, atomic force microscopy, Raman spectroscopy, and X-ray diffraction we could show that the thin films exhibit a polycrystalline, rhombohedral structure after a post-deposition annealing of at least 700 °C. The dielectric tensor in the spectral range from 1.7 eV to 5 eV determined from spectroscopic ellipsometry in combination with magneto-optical Kerr effect spectroscopy was found to be comparable to that of lattice matched films on single crystal substrates reported in literature [1]. The values of the metal-isolator transition temperature and temperature-dependent resistivities also reflect a high degree of crystalline quality of the thermally treated films.

Tailoring the structural and optical properties of TiN thin films by Ag ion implantation

NASA Astrophysics Data System (ADS)

Popović, M.; Novaković, M.; Rakočević, Z.; Bibić, N.

2016-12-01

Titanium nitride (TiN) thin films thickness of ∼260 nm prepared by dc reactive sputtering were irradiated with 200 keV silver (Ag) ions to the fluences ranging from 5 × 1015 ions/cm2 to 20 × 1015 ions/cm2. After implantation TiN layers were annealed 2 h at 700 °C in a vacuum. Ion irradiation-induced microstructural changes were examined by using Rutherford backscattering spectrometry, X-ray diffraction and transmission electron microscopy, while the surface topography was observed using atomic force microscopy. Spectroscopic ellipsometry was employed to get insights on the optical and electronic properties of TiN films with respect to their microstructure. The results showed that the irradiations lead to deformation of the lattice, increasing disorder and formation of new Ag phase. The optical results demonstrate the contribution of surface plasmon resonace (SPR) of Ag particles. SPR position shifted in the range of 354.3-476.9 nm when Ag ion fluence varied from 5 × 1015 ions/cm2 to 20 × 1015 ions/cm2. Shift in peak wavelength shows dependence on Ag particles concentration, suggesting that interaction between Ag particles dominate the surface plasmon resonance effect. Presence of Ag as second metal in the layer leads to overall decrease of optical resistivity of TiN.

Atmospheric-Pressure Chemical Vapor Deposition of Iron Pyrite Thin Films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Berry, Nicholas; Cheng, Ming; Perkins, Craig L.

2012-10-23

Iron pyrite (cubic FeS{sub 2}) is a promising candidate absorber material for earth-abundant thin-film solar cells. In this report, single-phase, large-grain, and uniform polycrystalline pyrite thin films are fabricated on glass and molybdenum-coated glass substrates by atmospheric-pressure chemical vapor deposition (AP-CVD) using the reaction of iron(III) acetylacetonate and tert-butyl disulfide in argon at 300 C, followed by sulfur annealing at 500--550 C to convert marcasite impurities to pyrite. The pyrite-marcasite phase composition depends strongly on the concentration of sodium in the growth substrate and the sulfur partial pressure during annealing. Phase and elemental composition of the films are characterized bymore » X-ray diffraction, Raman spectroscopy, Auger electron spectroscopy, secondary ion mass spectrometry, Rutherford backscattering spectrometry, and X-ray photoelectron spectroscopy. The in-plane electrical properties are surprisingly insensitive to phase and elemental impurities, with all films showing p-type, thermally activated transport with a small activation energy ({approx}30 meV), a room- temperature resistivity of {approx}1 {Omega} cm, and low mobility. These ubiquitous electrical properties may result from robust surface effects. These CVD pyrite thin films are well suited to fundamental electrical studies and the fabrication of pyrite photovoltaic device stacks.« less

Tailoring plasmonic properties of metal nanoparticle-embedded dielectric thin films: the sandwich method of preparation

NASA Astrophysics Data System (ADS)

Laha, Ranjit; Malar, P.; Osipowicz, Thomas; Kasiviswanathan, S.

2017-09-01

Tailoring of plasmonic properties of metal nanoparticle-embedded dielectric thin films are very crucial for many thin film-based applications. We, herein, investigate the various ways of tuning the plasmonic positions of gold nanoparticles (AuNPs)-embedded indium oxide thin films (Au:IO) through a sequence-specific sandwich method. The sandwich method is a four-step process involving deposition of In2O3 film by magnetron sputtering in first and fourth steps, thermal evaporation of Au on to In2O3 film in second and annealing of Au/In2O3 film in the third step. The Au:IO films were characterized by x-ray diffraction, spectrophotometry and transmission electron microscopy. The size and shape of the embedded nanoparticles were found from Rutherford back-scattering spectrometry. Based on dynamic Maxwell Garnett theory, the observed plasmon resonance position was ascribed to the oblate shape of AuNPs formed in sandwich method. Finally, through experimental data, it was shown that the plasmon resonance position of Au:IO thin films can be tuned by 125 nm. The method shown here can be used to tune the plasmon resonance position over the entire range of visible region for the thin films made from other combinations of metal-dielectric pair.

Validity of Vegard’s rule for Al1-xInxN (0.08  <  x  <  0.28) thin films grown on GaN templates

NASA Astrophysics Data System (ADS)

Magalhães, S.; Franco, N.; Watson, I. M.; Martin, R. W.; O'Donnell, K. P.; Schenk, H. P. D.; Tang, F.; Sadler, T. C.; Kappers, M. J.; Oliver, R. A.; Monteiro, T.; Martin, T. L.; Bagot, P. A. J.; Moody, M. P.; Alves, E.; Lorenz, K.

2017-05-01

In this work, comparative x-ray diffraction (XRD) and Rutherford backscattering spectrometry (RBS) measurements allow a comprehensive characterization of Al1-xInxN thin films grown on GaN. Within the limits of experimental accuracy, and in the compositional range 0.08  <  x  <  0.28, the lattice parameters of the alloys generally obey Vegard’s rule, varying linearly with the InN fraction. Results are also consistent with the small deviation from linear behaviour suggested by Darakchieva et al (2008 Appl. Phys. Lett. 93 261908). However, unintentional incorporation of Ga, revealed by atom probe tomography (APT) at levels below the detection limit for RBS, may also affect the lattice parameters. Furthermore, in certain samples the compositions determined by XRD and RBS differ significantly. This fact, which was interpreted in earlier publications as an indication of a deviation from Vegard’s rule, may rather be ascribed to the influence of defects or impurities on the lattice parameters of the alloy. The wide-ranging set of Al1-xInxN films studied allowed furthermore a detailed investigation of the composition leading to lattice-matching of Al1-xInxN/GaN bilayers.

Ag implantation-induced modification of Ni-Ti shape memory alloy thin films

NASA Astrophysics Data System (ADS)

Kumar, V.; Singhal, R.; Vishnoi, R.; Banerjee, M. K.; Sharma, M. C.; Asokan, K.; Kumar, M.

2017-08-01

Nanocrystalline thin films of Ni-Ti shape memory alloy are deposited on an Si substrate by the DC-magnetron co-sputtering technique and 120 keV Ag ions are implanted at different fluences. The thickness and composition of the pristine films are determined by Rutherford Backscattering Spectrometry (RBS). X-Ray diffraction (XRD), atomic force microscopy (AFM) and four-point probe resistivity methods have been used to study the structural, morphological and electrical transport properties. XRD analysis has revealed the existence of martensitic and austenite phases in the pristine film and also evidenced the structural changes in Ag-implanted Ni-Ti films at different fluences. AFM studies have revealed that surface roughness and grain size of Ni-Ti films have decreased with an increase in ion fluence. The modifications in the mechanical behaviour of implanted Ni-Ti films w.r.t pristine film is determined by using a Nano-indentation tester at room temperature. Higher hardness and the ratio of higher hardness (H) to elastic modulus (Er) are observed for the film implanted at an optimized fluence of 9 × 1015 ions/cm2. This improvement in mechanical behaviour could be understood in terms of grain refinement and dislocation induced by the Ag ion implantation in the Ni-Ti thin films.

Investigation of irradiation effects induced by self-ion in 6H-SiC combining RBS/C, Raman and XRD

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chaabane, Nihed; Debelle, Aurelien; Sattonnay, Gael

2012-01-01

Single crystals of 6H-SiC were irradiated at room temperature and 670 K with 4 MeV C ions at two fluences: 1015 and 1016 cm2 (0.16 and 1.6 dpa at the damage peak). Damage accumulation was studied by a combination of X-ray diffraction (XRD), Raman spectroscopy and Rutherford backscattering spectrometry in channelling geometry (RBS/C) along the [0001] direction. The irradiated layer is found to be composed of a low damage region up to 1.5 lm followed by a region where the disorder level is higher, consistent with SRIM predictions. At room temperature and low fluence, typically 1015 cm2, the strain depthmore » profile follows the dpa depth distribution (with a maximum value of 2%). The disorder is most likely due to small defect clusters. When increasing the fluence up to 1016 cm2, a buried amorphous layer forms, as indicated by e.g. Raman results where the Si C bands become broader or even disappear. At a higher irradiation temperature of 670 K, amorphization is not observed at the same fluence, revealing a dynamic annealing process. However, results tend to suggest that the irradiated layer is highly heterogeneous and composed of different types of defects.« less

Crystal structure and composition of BAlN thin films: Effect of boron concentration in the gas flow

NASA Astrophysics Data System (ADS)

Wang, Shuo; Li, Xiaohang; Fischer, Alec M.; Detchprohm, Theeradetch; Dupuis, Russell D.; Ponce, Fernando A.

2017-10-01

We have investigated the microstructure of BxAl1-xN films grown by flow-modulated epitaxy at 1010 °C, with B/(B + Al) gas-flow ratios ranging from 0.06 to 0.18. The boron content obtained from X-ray diffraction (XRD) patterns ranges from x = 0.02 to 0.09. On the other hand, boron content deduced from the aluminum signal in the Rutherford backscattering spectra (RBS) ranges from x = 0.06 to 0.16, closely following the gas-flow ratios. Transmission electron microscopy indicates the sole presence of a wurtzite crystal structure in the BAlN films, and a tendency towards columnar growth for B/(B + Al) gas-flow ratios below 0.12. For higher ratios, the BAlN films exhibit a tendency towards twin formation and finer microstructure. Electron energy loss spectroscopy has been used to profile spatial variations in the composition of the films. The RBS data suggest that the incorporation of B is highly efficient for our growth method, while the XRD data indicate that the epitaxial growth may be limited by a solubility limit in the crystal phase at about 9%, for the range of B/(B + Al) gas-flow ratios that we have studied, which is significantly higher than previously thought.

In situ Pulsed Laser Deposition of C-Axis Oriented MgB2 Films and Their Characterization

NASA Technical Reports Server (NTRS)

Shinde, Sanjay; Lakew, Brook; Ogale, S. B.; Kulkarni, V. N.; Kale, S. N.; Venkatesan, T.

2004-01-01

The recent discovery of an intermetallic superconductor MgB2 has renewed interest in the area of superconductivity not only because of fundamental understanding of superconductivity but also due to its potential applicability in devices such as thermal detectors. Considerable amount of research has been devoted to obtain MgB2 films by an all in situ growth technique. We have grown MgB2 thin films by an all in situ pulsed laser deposition process from pure B and Mg targets. Ultrathin layers of B and Mg were deposited in a multilayer configuration. Hundreds of such Mg-B bilayers with a capping Mg layer on the top were deposited on sapphire substrate. These depositions were done in high vacuum (approx. 10(exp -7) Torr) and at room temperature. After deposition, such a configuration was annealed at high temperature for a short time in a forming gas (4% H2 in Ar). The best films, obtained by this procedure, showed superconducting transition temperature approx. 30 K. These films have been characterized by x-ray diffraction, Rutherford Backscattering Spectrometry, AC susceptibility-, resistivity- (with and without magnetic field) and 1/f noise-measurements. The physical properties of these films will be presented and discussed.

Magnetic properties of Sm-Co thin films grown on MgO(100) deposited from a single alloy target

DOE Office of Scientific and Technical Information (OSTI.GOV)

Verhagen, T. G. A.; Boltje, D. B.; Ruitenbeek, J. M. van

2014-08-07

We have grown epitaxial Sm-Co thin films by sputter deposition from a single alloy target with a nominal SmCo{sub 5} composition on Cr(100)-buffered MgO(100) single-crystal substrates. By varying the Ar gas pressure, we can change the composition of the film from a SmCo{sub 5}-like to a Sm{sub 2}Co{sub 7}-like phase. The composition, crystal structure, morphology, and magnetic properties of these films have been determined using Rutherford Backscattering, X-ray diffraction, and magnetization measurements. We find that we can grow films with, at room temperature, coercive fields as high as 3.3 T, but with a remanent magnetization which is lower than can bemore » expected from the texturing. This appears to be due to the Sm content of the films, which is higher than expected from the content of the target, even at the lowest possible sputtering pressures. Moreover, we find relatively large variations of film properties using targets of nominally the same composition. At low temperatures, the coercive fields increase, as expected for these hard magnets, but in the magnetization, we observe a strong background signal from the paramagnetic impurities in the MgO substrates.« less

Effects of gamma-ray irradiation on the optical properties of amorphous Se100-xHgx thin films

NASA Astrophysics Data System (ADS)

Ahmad, Shabir; Islam, Shama; Nasir, Mohd.; Asokan, K.; Zulfequar, M.

2018-06-01

In this study, the thermal quenching technique was employed to prepare bulk samples of Se100-xHgx (x = 0, 5, 10, 15). Thin films with a thickness of ∼250 nm were deposited on glass substrates using the thermal evaporation technique. These films were irradiated with gamma rays at doses of 25-100 kGy. The elemental compositions of the as-deposited thin films were confirmed by energy dispersive X-ray analysis and Rutherford backscattering spectrometry. X-ray diffraction analysis confirmed the crystalline nature of these thin films upto the dose of 75 kGy. Fourier transform-infrared spectroscopy showed that the concentration of defects decreased after gamma irradiation. Microstructural analysis by field emission scanning electron microscopy indicated that the grain size increases after irradiation. Optical study based on spectrophotometry showed that the optical band gap values of these films increase after the addition of Hg whereas they decrease after gamma irradiation. We found that the absorption coefficient increases with doses up to 75 kGy but decreases at higher doses. These remarkable shifts in the optical band gap and absorption coefficient values are interpreted in terms of the creation and annihilation of defects, which are the main effects produced by gamma irradiation.

Intrinsic hydrophilic nature of epitaxial thin-film of rare-earth oxide grown by pulsed laser deposition.

PubMed

Prakash, Saurav; Ghosh, Siddhartha; Patra, Abhijeet; Annamalai, Meenakshi; Motapothula, Mallikarjuna Rao; Sarkar, Soumya; Tan, Sherman J R; Zhunan, Jia; Loh, Kian Ping; Venkatesan, T

2018-02-15

Herein, we report a systematic study of water contact angle (WCA) of rare-earth oxide thin-films. These ultra-smooth and epitaxial thin-films were grown using pulsed laser deposition and then characterized using X-Ray diffraction (XRD), Rutherford backscattering spectroscopy (RBS), and atomic force microscopy (AFM). Through both the traditional sessile drop and the novel f-d method, we found that the films were intrinsically hydrophilic (WCA < 10°) just after being removed from the growth chamber, but their WCAs evolved with an exposure to the atmosphere with time to reach their eventual saturation values near 90° (but always stay 'technically' hydrophilic). X-Ray photoelectron spectroscopy analysis was used to further investigate qualitatively the nature of hydrocarbon contamination on the freshly prepared as well as the environmentally exposed REO thin-film samples as a function of the exposure time after they were removed from the deposition chamber. A clear correlation between the carbon coverage of the surface and the increase in WCA was observed for all of the rare-earth films, indicating the extrinsic nature of the surface wetting properties of these films and having no relation to the electronic configuration of the rare-earth atoms as proposed by Azimi et al.

Ferromagnetic Mn-Implanted GaP: Microstructures vs Magnetic Properties.

PubMed

Yuan, Ye; Hübner, René; Liu, Fang; Sawicki, Maciej; Gordan, Ovidiu; Salvan, G; Zahn, D R T; Banerjee, D; Baehtz, Carsten; Helm, Manfred; Zhou, Shengqiang

2016-02-17

Ferromagnetic GaMnP layers were prepared by ion implantation and pulsed laser annealing (PLA). We present a systematic investigation on the evolution of microstructure and magnetic properties depending on the pulsed laser annealing energy. The sample microstructure was analyzed by high-resolution X-ray diffraction (HR-XRD), transmission electron microscopy (TEM), Rutherford backscattering spectrometry (RBS), ultraviolet Raman spectroscopy (UV-RS), and extended X-ray absorption fine structure (EXAFS) spectroscopy. The presence of X-ray Pendellösung fringes around GaP (004) and RBS channeling prove the epitaxial structure of the GaMnP layer annealed at the optimized laser energy density (0.40 J/cm(2)). However, a forbidden TO vibrational mode of GaP appears and increases with annealing energy, suggesting the formation of defective domains inside the layer. These domains mainly appear in the sample surface region and extend to almost the whole layer with increasing annealing energy. The reduction of the Curie temperature (TC) and of the uniaxial magnetic anisotropy gradually happens when more defects and the domains appear as increasing the annealing energy density. This fact univocally points to the decisive role of the PLA parameters on the resulting magnetic characteristics in the processed layers, which eventually determine the magnetic (or spintronics) figure of merit.

Study of thickness dependent sputtering in gold thin films by swift heavy ion irradiation

NASA Astrophysics Data System (ADS)

Dash, P.; Sahoo, P. K.; Solanki, V.; Singh, U. B.; Avasthi, D. K.; Mishra, N. C.

2015-12-01

Gold thin films of varying thickness (10-100 nm) grown on silica substrates by e-beam evaporation method were irradiated by 120 MeV Au ions at 3 × 1012 and 1 × 1013 ions cm-2 fluences. Irradiation induced modifications of these films were probed by glancing angle X-ray diffraction (GAXRD), atomic force microscopy (AFM), Rutherford backscattering spectrometry (RBS) and surface enhanced Raman scattering (SERS). Irradiation didn't affect the structure, the lattice parameter or the crystallite size, but modified the texturing of grains from [1 1 1] to [2 2 0]. RBS indicated thickness dependent sputtering on irradiation. The sputtering yield was found to decrease with increasing thickness. AFM indicated increase of roughness with increasing irradiation fluence for films of all thickness. In agreement with the AFM observation, the gold nanostructures on the surface of 20 nm thick film were found to increase the SERS signal of acridine orange dye attached to these structures. The SERS peaks were amplified by many fold with increasing ion fluence. The effect of 120 MeV Au ion irradiation on the grain texture, surface morphology and SERS activity in addition to the thickness dependent sputtering in gold thin films are explained by the thermal spike model of ion-matter interaction.

Synthesis of composite TiN/Ni3N/a-Si3N4 thin films using the plasma focus device

NASA Astrophysics Data System (ADS)

Adeel Umar, Zeshan; Ahmad, Riaz; Khan, Ijaz Ahmad; Hussain, Tousif; Hussnain, Ali; Khalid, Nida; Awais, Ali; Ali, T.

2013-12-01

Composite films of TiN/Ni3N/a-Si3N4 were synthesized using the Mather-type plasma focus device with varying numbers of focus deposition shots (5, 15, and 25) at 0° and 10° angular positions. The composition and structural analysis of these films were analyzed by using Rutherford backscattering (RBS) and X-ray diffraction (XRD). Scanning electron microscope and atomic force microscope were used to study the surface morphology of films. XRD patterns confirm the formation of composite TiN/Ni3N/a-Si3N4 films. The crystallite size of TiN (200) plane is 11 and 22 nm, respectively, at 0° and 10° angular positions for same 25 focus deposition shots. Impurity levels and thickness were measured using RBS. Scanning electron microscopy results show the formation of net-like structures for multiple focus shots (5, 15, and 25) at angular positions of 0° and 10°. The average surface roughness of the deposited films increases with increasing focus shots. The roughness of the film decreases at higher angle 10° and the films obtained are smoother as compared with the films deposited at 0° angular positions.

Mapping 180° polar domains using electron backscatter diffraction and dynamical scattering simulations

DOE PAGES

Burch, Matthew J.; Fancher, Chris M.; Patala, Srikanth; ...

2016-11-18

A novel technique, which directly and nondestructively maps polar domains using electron backscatter diffraction (EBSD) is described and demonstrated. Through dynamical diffraction simulations and quantitative comparison to experimental EBSD patterns, the absolute orientation of a non-centrosymmetric crystal can be determined. With this information, the polar domains of a material can be mapped. The technique is demonstrated by mapping the non-ferroelastic, or 180°, ferroelectric domains in periodically poled LiNbO 3 single crystals. Furthermore, the authors demonstrate the possibility of mapping polarity using this technique in other polar materials system.

Stress Corrosion Cracking Facet Crystallography of Ti-8Al-1Mo-1V (Preprint)

DTIC Science & Technology

2011-05-01

fractography and electron backscatter diffraction. The results indicate that most facets are formed nearly perpendicular to the loading direction on...of Ti-8Al- 1Mo-1V have been characterized using quantitative fractography and electron backscatter diffraction. The results indicate that most facets...EBSD and quantitative tilt fractography [27;29] allow for determination of the crystallographic fracture plane to an accuracy between 1o [29] and

A method to correct coordinate distortion in EBSD maps

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Y.B., E-mail: yubz@dtu.dk; Elbrønd, A.; Lin, F.X.

2014-10-15

Drift during electron backscatter diffraction mapping leads to coordinate distortions in resulting orientation maps, which affects, in some cases significantly, the accuracy of analysis. A method, thin plate spline, is introduced and tested to correct such coordinate distortions in the maps after the electron backscatter diffraction measurements. The accuracy of the correction as well as theoretical and practical aspects of using the thin plate spline method is discussed in detail. By comparing with other correction methods, it is shown that the thin plate spline method is most efficient to correct different local distortions in the electron backscatter diffraction maps. -more » Highlights: • A new method is suggested to correct nonlinear spatial distortion in EBSD maps. • The method corrects EBSD maps more precisely than presently available methods. • Errors less than 1–2 pixels are typically obtained. • Direct quantitative analysis of dynamic data are available after this correction.« less

Dark-field imaging based on post-processed electron backscatter diffraction patterns of bulk crystalline materials in a scanning electron microscope.

PubMed

Brodusch, Nicolas; Demers, Hendrix; Gauvin, Raynald

2015-01-01

Dark-field (DF) images were acquired in the scanning electron microscope with an offline procedure based on electron backscatter diffraction (EBSD) patterns (EBSPs). These EBSD-DF images were generated by selecting a particular reflection on the electron backscatter diffraction pattern and by reporting the intensity of one or several pixels around this point at each pixel of the EBSD-DF image. Unlike previous studies, the diffraction information of the sample is the basis of the final image contrast with a pixel scale resolution at the EBSP providing DF imaging in the scanning electron microscope. The offline facility of this technique permits the selection of any diffraction condition available in the diffraction pattern and displaying the corresponding image. The high number of diffraction-based images available allows a better monitoring of deformation structures compared to electron channeling contrast imaging (ECCI) which is generally limited to a few images of the same area. This technique was applied to steel and iron specimens and showed its high capability in describing more rigorously the deformation structures around micro-hardness indents. Due to the offline relation between the reference EBSP and the EBSD-DF images, this new technique will undoubtedly greatly improve our knowledge of deformation mechanism and help to improve our understanding of the ECCI contrast mechanisms. Copyright © 2014 Elsevier B.V. All rights reserved.

Characterization of the carbides and the martensite phase in powder-metallurgy high-speed steel

DOE Office of Scientific and Technical Information (OSTI.GOV)

Godec, Matjaz, E-mail: matjaz.godec@imt.si; Batic, Barbara Setina; Mandrino, Djordje

2010-04-15

A microstructural characterization of the powder-metallurgy high-speed-steel S390 Microclean was performed based on an elemental distribution of the carbide phase as well as crystallographic analyses. The results showed that there were two types of carbides present: vanadium-rich carbides, which were not chemically homogeneous and exhibited a tungsten-enriched or tungsten-depleted central area; and chemically homogeneous tungsten-rich M{sub 6}C-type carbides. Despite the possibility of chemical inhomogenities, the crystallographic orientation of each of the carbides was shown to be uniform. Using electron backscatter diffraction the vanadium-rich carbides were determined to be either cubic VC or hexagonal V{sub 6}C{sub 5}, while the tungsten-rich carbidesmore » were M{sub 6}C. The electron backscatter diffraction results were also verified using X-ray diffraction. Several electron backscatter diffraction pattern maps were acquired in order to define the fraction of each carbide phase as well as the amount of martensite phase. The fraction of martensite was estimated using band-contrast images, while the fraction of carbides was calculated using the crystallographic data.« less

Investigation of Li/Nb-sublattices in ion implanted LiNbO3 by RBS and NRA in channelling configuration

NASA Astrophysics Data System (ADS)

Schmidt, E.; Ritter, K.; Gärtner, K.; Wendler, E.

2017-10-01

Differently oriented LiNbO3 crystals were implanted at room temperature with 1 MeV iodine ions to fluences between 2 × 1013 and 1 × 1014 cm-2, which cover the transition from a low damage level up to complete amorphisation. The aim of this work was to explore the use of nuclear reaction analysis (NRA) in combination with Rutherford backscattering spectrometry (RBS) in channelling configuration for studying the damage evolution as a function of the ion fluence in both the Li and Nb sublattice. Protons with energies between 1.4 and 1.6 MeV and a standard RBS setup were used. Scattering events detected at low energies result from Rutherford backscattering of protons on Nb and O atoms. At high energies alpha particles are registered, which result from the nuclear reaction between protons and Li atoms. Along different low-index crystallographic directions channelling effects within both the RBS and NRA part of the spectra are observed. However, the strength of channeling within the NRA part depends on the crystallographic direction investigated. These effects are explained by the nature of ion-channelling with respect to the small atomic number of Li and is supported by calculations of minimum yields (ratio of scattering yield in aligned and random direction) applying the computer code DICADA. The consequence is that damage studies with NRA can be only performed in Z-direction of LiNbO3. In this case, the Li and Nb sublattice were found to be similarly damaged after 1 MeV iodine implantation.

Robust diffraction correction method for high-frequency ultrasonic tissue characterization

NASA Astrophysics Data System (ADS)

Raju, Balasundar

2004-05-01

The computation of quantitative ultrasonic parameters such as the attenuation or backscatter coefficient requires compensation for diffraction effects. In this work a simple and accurate diffraction correction method for skin characterization requiring only a single focal zone is developed. The advantage of this method is that the transducer need not be mechanically repositioned to collect data from several focal zones, thereby reducing the time of imaging and preventing motion artifacts. Data were first collected under controlled conditions from skin of volunteers using a high-frequency system (center frequency=33 MHz, BW=28 MHz) at 19 focal zones through axial translation. Using these data, mean backscatter power spectra were computed as a function of the distance between the transducer and the tissue, which then served as empirical diffraction correction curves for subsequent data. The method was demonstrated on patients patch-tested for contact dermatitis. The computed attenuation coefficient slope was significantly (p<0.05) lower at the affected site (0.13+/-0.02 dB/mm/MHz) compared to nearby normal skin (0.2+/-0.05 dB/mm/MHz). The mean backscatter level was also significantly lower at the affected site (6.7+/-2.1 in arbitrary units) compared to normal skin (11.3+/-3.2). These results show diffraction corrected ultrasonic parameters can differentiate normal from affected skin tissues.

Epitaxial growth of SrTiO3/YBa2Cu3O7 - x heterostructures by plasma-enhanced metalorganic chemical vapor deposition

NASA Astrophysics Data System (ADS)

Liang, S.; Chern, C. S.; Shi, Z. Q.; Lu, P.; Safari, A.; Lu, Y.; Kear, B. H.; Hou, S. Y.

1994-06-01

We report heteroepitaxial growth of SrTiO3 on YBa2Cu3O7-x/LaAlO3 substrates by plasma-enhanced metalorganic chemical vapor deposition. X-ray diffraction results indicated that SrTiO3 films were epitaxially grown on a (001) YBa2Cu3O7-x surface with [100] orientation perpendicular to the surface. The film composition, with Sr/Ti molar ratio in the range of 0.9 to 1.1, was determined by Rutherford backscattering spectrometry and energy dispersive spectroscopy. The thickness of the SrTiO3 films is 0.1-0.2 μm. The epitaxial growth was further evidenced by high-resolution transmission electron microscopy and selected area diffraction. Atomically abrupt SrTiO3/YBa2Cu3O7-x interface and epitaxial growth with [100]SrTiO3∥[001]YBa2Cu3O7-x were observed in this study. The superconducting transition temperature of the bottom YBa2Cu3O7-x layer, as measured by ac susceptometer, did not significantly degrade after the growth of overlayer SrTiO3. The capacitance-voltage measurements showed that the dielectric constant of the SrTiO3 films was as high as 315 at a signal frequency of 100 KHz. The leakage current density through the SrTiO3 films is about 1×10-6 A/cm2 at 2-V operation. Data analysis on the current-voltage characteristic indicated that the conduction process is related to bulk-limited Poole-Frenkel emission.

Combined effect of Pt and W alloying elements on Ni-silicide formation

NASA Astrophysics Data System (ADS)

Luo, T.; Mangelinck, D.; Descoins, M.; Bertoglio, M.; Mouaici, N.; Hallén, A.; Girardeaux, C.

2018-03-01

A combinatorial study of the combined effect of Pt and W on Ni silicide formation is performed. Ni(Pt, W) films with thickness and composition gradients were prepared by a co-deposition composition spread technique using sputtering deposition from Pt, W, and Ni targets. The deposited Ni(Pt,W) films were characterized by X-ray diffraction, X-ray reflectivity, Rutherford backscattering, and atom probe tomography. The maximum content of alloying elements is close to 27 at. %. Simulations of the thickness and composition were carried out and compared with experimental results. In situ X-ray diffraction and atom probe tomography were used to study the phase formation. Both additive alloying elements (Pt + W) slow down the Ni consumption and the effect of W is more pronounced than the one of Pt. Regarding the effect of alloying elements on Ni silicides formation, three regions could be distinguished in the Ni(Pt,W)/Si wafer. For the region close to the Ni target, the low contents of alloying elements (Pt + W) have little impact on the phase sequence (δ-Ni2Si is the first silicide and NiSi forms when Ni is entirely consumed) but the kinetics of silicide formation slows down. The region close to the Pt target has high contents of (Pt + W) and is rich in Pt and a simultaneous phase formation of δ-Ni2Si and NiSi is observed. For the high (Pt + W) contents and W-rich region, NiSi forms unexpectedly before δ-Ni2Si and the subsequent growth of δ-Ni2Si is accompanied by the NiSi consumption. When Ni is entirely consumed, NiSi regrows at the expense of δ-Ni2Si.

In situ investigation of deformation mechanisms in magnesium-based metal matrix composites

NASA Astrophysics Data System (ADS)

Farkas, Gergely; Choe, Heeman; Máthis, Kristián; Száraz, Zoltán; Noh, Yoonsook; Trojanová, Zuzanka; Minárik, Peter

2015-07-01

We studied the effect of short fibers on the mechanical properties of a magnesium alloy. In particular, deformation mechanisms in a Mg-Al-Sr alloy reinforced with short alumina fibers were studied in situ using neutron diffraction and acoustic emission methods. The fibers' plane orientation with respect to the loading axis was found to be a key parameter, which influences the acting deformation processes, such as twinning or dislocation slip. Furthermore, the twinning activity was much more significant in samples with parallel fiber plane orientation, which was confirmed by both acoustic emission and electron backscattering diffraction results. Neutron diffraction was also used to assist in analyzing the acoustic emission and electron backscattering diffraction results. The simultaneous application of the two in situ methods, neutron diffraction and acoustic emission, was found to be beneficial for obtaining complementary datasets about the twinning and dislocation slip in the magnesium alloys and composites used in this study.

Ion-irradiation-induced densification of zirconia sol-gel thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Levine, T.E.; Giannelis, E.P.; Kodali, P.

1994-02-01

We have investigated the densification behavior of sol-gel zirconia films resulting from ion irradiation. Three sets of films were implanted with neon, krypton, or xenon. The ion energies were chosen to yield approximately constant energy loss through the film and the doses were chosen to yield similar nuclear energy deposition. Ion irradiation of the sol-gel films resulted in carbon and hydrogen loss as indicated by Rutherford backscattering spectrometry and forward recoil energy spectroscopy. Although the densification was hypothesized to result from target atom displacement, the observed densification exhibits a stronger dependence on electronic energy deposition.

Ion beam analysis of ancient Mexican colored teeth from archaeological sites in Mexico City

NASA Astrophysics Data System (ADS)

Rodríguez-Fernández, L.; Ruvalcaba-Sil, J. L.; Ontalba-Salamanca, M. A.; Román-Berrelleza, J. A.; Gallardo, M. L.; Grimaldi, D. M.; de Lucio, O. G.; Miranda, J.

1999-04-01

Infant teeth with extremely rare colored enamel regions white, blue-gray and brown, have been analyzed by Particle Induced X-ray Emission (PIXE) and Rutherford Backscattering Spectrometry (RBS). The teeth were part of human being sacrifices to deities of the Mexica culture, Mexico, corresponding to the Late Post-classic period (1325-1521 A.D.). Comparisons to normal teeth from the same historical period indicate that the colored ones present larger mean amounts of Mn and Fe, while Zn and Sr do not differ too much. Possible inorganic compounds responsible for the different colorations are indicated.

RBS as a new primary direct reference method for measuring quantity of material

NASA Astrophysics Data System (ADS)

Jeynes, C.

2017-09-01

The quantity of material in thin films can be measured reliably, non-destructively, and at an absolute traceable accuracy with a combined standard uncertainty of 1% by Rutherford backscattering spectrometry (RBS). We have demonstrated a measurement protocol for the determination of quantity of material by RBS that has been accredited at this accuracy to the ISO 17025 standard by the United Kingdom Accreditation Service (UKAS). The method is entirely traceable to SI units relying on no artefacts, and thus qualifies as a primary direct reference method as defined by the ISO Guide 35:1985 (paragraph 9.4.1).

New adatom model for Si(11) 7X7 and Si(111)Ge 5X5 reconstructed surfaces

NASA Technical Reports Server (NTRS)

Chadi, D. J.

1985-01-01

A new adatom model differing from the conventional model by a reconstruction of the substrate is proposed. The new adatom structure provides an explanation for the 7x7 and 5x5 size of the unit cells seen on annealed Si(111) and Si(111)-Ge surfaces, respectively. The model is consistent with structural information from vacuum-tunneling microscopy. It also provides simple explanations for stacking-fault-type features expected from Rutherford backscattering experiments and for similarities in the LEED and photoemission spectra of 2x1 and 7x7 surfaces.

Angular distribution of species in pulsed laser deposition of LaxCa1-xMnO3

NASA Astrophysics Data System (ADS)

Ojeda-G-P, Alejandro; Schneider, Christof W.; Döbeli, Max; Lippert, Thomas; Wokaun, Alexander

2015-05-01

The angular distribution of species from a La0.4Ca0.6MnO3 target irradiated with a 248 nm nanosecond pulsed laser was investigated by Rutherford backscattering spectrometry for four different Ar pressures. The film thickness angular distribution was also analyzed using profilometry. Depending on the background gas pressure, the target to substrate distance, and the angular location the film thickness and composition varies considerably. In particular the film composition could vary by up to 17% with respect to the composition of the target material.

Three dimensional X-ray Diffraction Contrast Tomography Reconstruction of Polycrystalline Strontium Titanate during Sintering and Electron Backscatter Diffraction Validation

NASA Astrophysics Data System (ADS)

Syha, M.; Rheinheimer, W.; Loedermann, B.; Graff, A.; Trenkle, A.; Baeurer, M.; Weygand, D.; Ludwig, W.; Gumbsch, P.

The microstructural evolution of polycrystalline strontium titanate was investigated in three dimensions (3D) using X-ray diffraction contrast tomography (DCT) before and after ex-situ annealing at 1600°C. Post-annealing, the specimen was additionally subjected to phase contrast tomography (PCT) in order to finely resolve the porosities. The resulting microstructure reconstructions were studied with special emphasis on morphology and interface orientation during microstructure evolution. Subsequently, cross-sections of the specimen were studied using electron backscatter diffraction (EBSD). Corresponding cross-sections through the 3D reconstruction were identified and the quality of the reconstruction is validated with special emphasis on the spatial resolution at the grain boundaries, the size and location of pores contained in the material and the accuracy of the orientation determination.

Nanometres-resolution Kikuchi patterns from materials science specimens with transmission electron forward scatter diffraction in the scanning electron microscope.

PubMed

Brodusch, N; Demers, H; Gauvin, R

2013-04-01

A charge-coupled device camera of an electron backscattered diffraction system in a scanning electron microscope was positioned below a thin specimen and transmission Kikuchi patterns were collected. Contrary to electron backscattered diffraction, transmission electron forward scatter diffraction provides phase identification and orientation mapping at the nanoscale. The minimum Pd particle size for which a Kikuchi diffraction pattern was detected and indexed reliably was 5.6 nm. An orientation mapping resolution of 5 nm was measured at 30 kV. The resolution obtained with transmission electron forward scatter diffraction was of the same order of magnitude than that reported in electron nanodiffraction in the transmission electron microscope. An energy dispersive spectrometer X-ray map and a transmission electron forward scatter diffraction orientation map were acquired simultaneously. The high-resolution chemical, phase and orientation maps provided at once information on the chemical form, orientation and coherency of precipitates in an aluminium-lithium 2099 alloy. © 2013 The Authors Journal of Microscopy © 2013 Royal Microscopical Society.

Evaluation of lattice displacement in Mg - Implanted GaN by Rutherford backscattering spectroscopy

NASA Astrophysics Data System (ADS)

Nishikata, N.; Kushida, K.; Nishimura, T.; Mishima, T.; Kuriyama, K.; Nakamura, T.

2017-10-01

Evaluation of lattice displacement in Mg-ion implanted GaN is studied by combining elastic recoil detection analysis (ERDA), Rutherford backscattering spectroscopy (RBS) and Photoluminescence (PL) measurements. Mg-ion implantation into GaN single crystal wafer is performed with energies of 30 keV (ion fluence; 3.5 × 1014 cm-2) and 60 keV (6.5 × 1014 cm-2) at room temperature. The ERDA measurements using the 1.5 MeV helium beam can evaluate hydrogen from the surface to ∼300 nm. The hydrogen concentration for un-implanted and as-implanted GaN is 3.1 × 1014 cm-2 and 6.1 × 1014 cm-2 at around 265 nm in depth. χmin (the ratio of aligned and random yields) near the surface of the 〈0 0 0 1〉 direction for Ga is 1.61% for un-implanted and 2.51% for Mg-ion implanted samples. On the other hand, the value of χmin for N is 10.08% for un-implanted and 11.20% for Mg-ion implanted samples. The displacement concentration of Ga and N estimated from these χmin values is 4.01 × 1020 cm-3 and 5.46 × 1020 cm-3, respectively. This suggests that Ga vacancy (VGa), N vacancy (VN), Ga interstitial (Gai), and N interstitial (Ni) is introduced in Mg-ion implanted GaN. A strong emission at around 400 nm in as-implanted GaN is related to a VN donor and some acceptor pairs. It is suggested that the origin of the very high resistivity after the Mg-ion implantation is attributed to the carrier compensation effect due to the deep level of Ni as a non-radiative center.

Silicide phases formation in Co/c-Si and Co/a-Si systems during thermal annealing

NASA Astrophysics Data System (ADS)

Novaković, M.; Popović, M.; Zhang, K.; Lieb, K. P.; Bibić, N.

2014-03-01

The effect of the interface in cobalt-silicon bilayers on the silicide phase formation and microstructure has been investigated. Thin cobalt films were deposited by electron beam evaporation to a thickness of 50 nm on crystalline silicon (c-Si) or silicon with pre-amorphized surface (a-Si). After deposition one set of samples was annealed for 2 h at 200, 300, 400, 500, 600 and 700 °C. Another set of samples was irradiated with 400 keV Xe+ ions and then annealed at the same temperatures. Phase transitions were investigated with Rutherford backscattering spectroscopy, X-ray diffraction and cross-sectional transmission electron microscopy. No silicide formation was observed up to 400 °C, for both non-irradiated and ion-irradiated samples. When increasing the annealing temperature, the non-irradiated and irradiated Co/c-Si samples showed a similar behaviour: at 500 °C, CoSi appeared as the dominant silicide, followed by the formation of CoSi2 at 600 and 700 °C. In the case of non-irradiated Co/a-Si samples, no silicide formation occurred up to 700 °C, while irradiated samples with pre-amorphized substrate (Co/a-Si) showed a phase sequence similar to that in the Co/c-Si system. The observed phase transitions are found to be consistent with predictions of the effective heat of formation model.

Effects of 200 keV Ar-ions irradiation on the structural and optical properties of reactively sputtered CrN films

NASA Astrophysics Data System (ADS)

Novaković, M.; Popović, M.; Zhang, K.; Rakočević, Z.; Bibić, N.

2016-12-01

Modification in structural and optical properties of chromium-nitride (CrN) films induced by argon ion irradiation and thermal annealings were investigated using various experimental techniques. CrN films deposited by d. c. reactive sputtering on Si substrate were implanted with 200 keV argon ions, at fluences of 5-20 × 1015 ions/cm2. As-implanted samples were then annealed in vacuum, for 2 h at 700 °C. Rutherford backscattering spectrometry, X-ray diffraction, cross-sectional (high-resolution) transmission electron microscopy and spectroscopic ellipsometry (SE) measurements were carried out in order to study structural and optical properties of the layers. After irradiation with 200 keV Ar ions a damaged surface layer of nanocrystalline structure was generated, which extended beyond the implantation profile, but left an undamaged bottom zone. Partial loss of columnar structure observed in implanted samples was recovered after annealing at 700 °C and CrN started to decompose to Cr2N. This layer geometry determined from transmission electron microscopy was inferred in the analysis of SE data using the combined Drude and Tauc-Lorentz model, and the variation of the optical bandgap was deduced. The results are discussed on the basis of the changes induced in the microstructure. It was found that the optical properties of the layers are strongly dependent on the defects' concentration of CrN.

Phase separations of amorphous CoW films during oxidation and reactions with Si and Al

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, S.Q.; Mayer, J.W.

1989-03-01

Reactions of thin Co/sub 55/ W/sub 45/ films in contact with Si(100) substrates and aluminum overlayers annealed in vacuum in the temperature ranges of 625--700 /sup 0/C and 500--600 /sup 0/C, respectively, and of thin Co/sub 55/W/sub 45/ films in air from 500 to 600 /sup 0/C were investigated by Rutherford backscattering spectrometry, glancing angle x-ray diffraction, and scanning electron microscope techniques. CoW alloy films were amorphous and have a crystallization temperature of 850 /sup 0/C on SiO/sub 2/ substrates. The compound formed is Co/sub 7/ W/sub 6/. Phase separations were found in all the reactions. A layer of cobaltmore » compounds (CoSi/sub 2/ in Si/CoW, Co/sub 2/ Al/sub 9/ in CoW/Al, and Co/sub 3/ O/sub 4/ in CoW with air) was found to form at the reaction interfaces. In addition, a layer of mainly tungsten compounds (WSi/sub 2/ in Si/CoW, WAl/sub 12/ in CoW/Al, and WO/sub 3/ in CoW with air) was found next to cobalt compound layers, but further away from the reaction interfaces. The reactions started at temperatures comparable to those required for the formation of corresponding tungsten compounds.« less

TiCN thin films grown by reactive crossed beam pulsed laser deposition

NASA Astrophysics Data System (ADS)

Escobar-Alarcón, L.; Camps, E.; Romero, S.; Muhl, S.; Camps, I.; Haro-Poniatowski, E.

2010-12-01

In this work, we used a crossed plasma configuration where the ablation of two different targets in a reactive atmosphere was performed to prepare nanocrystalline thin films of ternary compounds. In order to assess this alternative deposition configuration, titanium carbonitride (TiCN) thin films were deposited. Two crossed plasmas were produced by simultaneously ablating titanium and graphite targets in an Ar/N2 atmosphere. Films were deposited at room temperature onto Si (100) and AISI 4140 steel substrates whilst keeping the ablation conditions of the Ti target constant. By varying the laser fluence on the carbon target it was possible to study the effect of the carbon plasma on the characteristics of the deposited TiCN films. The structure and composition of the films were analyzed by X-ray Diffraction, Raman Spectroscopy and non-Rutherford Backscattering Spectroscopy. The hardness and elastic modulus of the films was also measured by nanoindentation. In general, the experimental results showed that the TiCN thin films were highly oriented in the (111) crystallographic direction with crystallite sizes as small as 6.0 nm. It was found that the hardness increased as the laser fluence was increased, reaching a maximum value of about 33 GPa and an elastic modulus of 244 GPa. With the proposed configuration, the carbon content could be easily varied from 42 to 5 at.% by changing the laser fluence on the carbon target.

Structural and optical properties of Ag-doped copper oxide thin films on polyethylene napthalate substrate prepared by low temperature microwave annealing

NASA Astrophysics Data System (ADS)

Das, Sayantan; Alford, T. L.

2013-06-01

Silver doped cupric oxide thin films are prepared on polyethylene naphthalate (flexible polymer) substrates. Thin films Ag-doped CuO are deposited on the substrate by co-sputtering followed by microwave assisted oxidation of the metal films. The low temperature tolerance of the polymer substrates led to the search for innovative low temperature processing techniques. Cupric oxide is a p-type semiconductor with an indirect band gap and is used as selective absorption layer solar cells. X-ray diffraction identifies the CuO phases. Rutherford backscattering spectrometry measurements confirm the stoichiometry of each copper oxide formed. The surface morphology is determined by atomic force microscopy. The microstructural properties such as crystallite size and the microstrain for (-111) and (111) planes are calculated and discussed. Incorporation of Ag led to the lowering of band gap in CuO. Consequently, it is determined that Ag addition has a strong effect on the structural, morphological, surface, and optical properties of CuO grown on flexible substrates by microwave annealing. Tauc's plot is used to determine the optical band gap of CuO and Ag doped CuO films. The values of the indirect and direct band gap for CuO are found to be 2.02 eV and 3.19 eV, respectively.

Swift heavy-ions induced sputtering in BaF2 thin films

NASA Astrophysics Data System (ADS)

Pandey, Ratnesh K.; Kumar, Manvendra; Singh, Udai B.; Khan, Saif A.; Avasthi, D. K.; Pandey, Avinash C.

2013-11-01

In our present experiment a series of barium fluoride thin films of different thicknesses have been deposited by electron beam evaporation technique at room temperature on silicon substrates. The effect of film thickness on the electronic sputter yield of polycrystalline BaF2 thin films has been reported in the present work. Power law for sputtered species collected on catcher grids has also been reported for film of lowest thickness. Sputtering has been performed by 100 MeV Au+28 ions. Atomic force microscopy (AFM) has been done to check the surface morphology of pristine samples. Glancing angle X-ray diffraction (GAXRD) measurements show that the pristine films are polycrystalline in nature and the grain size increases with increase in film thickness. Rutherford backscattering spectrometry (RBS) of pristine as well as irradiated films was done to determine the areal concentration of Ba and F atoms in the films. A reduction in the sputter yield of BaF2 films with the increase in film thickness has been observed from RBS results. The thickness dependence sputtering is explained on the basis of thermal spike and the energy confinement of the ions in the smaller grains. Also transmission electron microscopy (TEM) of the catchers shows a size distribution of sputtered species with values of power law exponent 1/2 and 3/2 for two fluences 5 × 1011 and 1 × 1012 ions/cm2, respectively.

Studies on the surface modification of TiN coatings using MEVVA ion implantation with selected metallic species

NASA Astrophysics Data System (ADS)

Ward, L. P.; Purushotham, K. P.; Manory, R. R.

2016-02-01

Improvement in the performance of TiN coatings can be achieved using surface modification techniques such as ion implantation. In the present study, physical vapor deposited (PVD) TiN coatings were implanted with Cr, Zr, Nb, Mo and W using the metal evaporation vacuum arc (MEVVA) technique at a constant nominal dose of 4 × 1016 ions cm-2 for all species. The samples were characterized before and after implantation, using Rutherford backscattering (RBS), glancing incident angle X-ray diffraction (GIXRD), atomic force microscopy (AFM) and optical microscopy. Friction and wear studies were performed under dry sliding conditions using a pin-on-disc CSEM Tribometer at 1 N load and 450 m sliding distance. A reduction in the grain size and surface roughness was observed after implantation with all five species. Little variation was observed in the residual stress values for all implanted TiN coatings, except for W implanted TiN which showed a pronounced increase in compressive residual stress. Mo-implanted samples showed a lower coefficient of friction and higher resistance to breakdown during the initial stages of testing than as-received samples. Significant reduction in wear rate was observed after implanting with Zr and Mo ions compared with unimplanted TiN. The presence of the Ti2N phase was observed with Cr implantation.

Influence of thermal annealing and radiation enhanced diffusion processes on surface plasmon resonance of gold implanted dielectric matrices

NASA Astrophysics Data System (ADS)

Devi, Ksh. Devarani; Ojha, Sunil; Singh, Fouran

2018-03-01

Gold nanoparticles (AuNPs) embedded in fused silica and sapphire dielectric matrices were synthesized by Au ion implantation. Systematic investigations were carried out to study the influence of implantation dose, post annealing temperature, swift heavy ion (SHI) irradiation and radiation enhanced diffusion (RED). Rutherford Backscattering Spectrometry (RBS) measurements were carried out to quantify concentration and depth profile of Au present in the host matrices. X-ray diffraction (XRD) was employed to characterize AuNPs formation. As-implanted and post-annealed films were irradiated using 100 MeV Ag ions to investigate the effect of electronic energy deposition on size and shape of NPs, which is estimated indirectly by the peak shape analysis of surface plasmon resonance (SPR). The effect of volume fraction of Au and their redistribution is also reported. A strong absorption in near infra red region is also noticed and understood by the formation of percolated NPs in dielectric matrices. It is quite clear from these results that the effect of RED assisted Oswald ripening is much more pronounced than the conventional Oswald ripening for the growth of NPs in the case of silica host matrices. However for sapphire matrices, it seems that growth of NPs already completed during implantation and it may be attributed to the high diffusivity of Au in sapphire matrices during implantation process.

Important role of the non-uniform Fe distribution for the ferromagnetism in group-IV-based ferromagnetic semiconductor GeFe

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wakabayashi, Yuki K.; Ohya, Shinobu; Ban, Yoshisuke

2014-11-07

We investigate the growth-temperature dependence of the properties of the group-IV-based ferromagnetic semiconductor Ge{sub 1−x}Fe{sub x} films (x = 6.5% and 10.5%), and reveal the correlation of the magnetic properties with the lattice constant, Curie temperature (T{sub C}), non-uniformity of Fe atoms, stacking-fault defects, and Fe-atom locations. While T{sub C} strongly depends on the growth temperature, we find a universal relationship between T{sub C} and the lattice constant, which does not depend on the Fe content x. By using the spatially resolved transmission-electron diffractions combined with the energy-dispersive X-ray spectroscopy, we find that the density of the stacking-fault defects and the non-uniformitymore » of the Fe concentration are correlated with T{sub C}. Meanwhile, by using the channeling Rutherford backscattering and particle-induced X-ray emission measurements, we clarify that about 15% of the Fe atoms exist on the tetrahedral interstitial sites in the Ge{sub 0.935}Fe{sub 0.065} lattice and that the substitutional Fe concentration is not correlated with T{sub C}. Considering these results, we conclude that the non-uniformity of the Fe concentration plays an important role in determining the ferromagnetic properties of GeFe.« less

Disordering of ultra thin WO3 films by high-energy ions

NASA Astrophysics Data System (ADS)

Matsunami, N.; Kato, M.; Sataka, M.; Okayasu, S.

2017-10-01

We have studied disordering or atomic structure modification of ultra thin WO3 films under impact of high-energy ions with non-equilibrium and equilibrium charge incidence, by means of X-ray diffraction (XRD). WO3 films were prepared by thermal oxidation of W deposited on MgO substrate. Film thickness obtained by Rutherford backscattering spectrometry (RBS) is as low as 2 nm. Smoothness of film surface was observed by atomic force microscopy. It is found that the ratio of XRD intensity degradation per 90 MeV Ni+10 ion (the incident charge is lower than the equilibrium charge) to that per 90 MeV Ni ion with the equilibrium charge depends on the film thickness. Also, film thickness dependence is observed for 100 MeV Xe+14. By comparison of the experimental result with a simple model calculation based on the assumption that the mean charge of ions along the depth follows a saturation curve with power-law approximation to the charge dependent electronic stopping power, the characteristic length attaining the equilibrium charge is obtained to be ∼7 nm for 90 MeV Ni+10 ion incidence or the electron loss cross section of ∼1016 cm2, demonstrating that disordering of ultra WO3 films has been observed and a fundamental quantity can be derived through material modification.

Nickel silicide formation in silicon implanted nickel

NASA Astrophysics Data System (ADS)

Rao, Z.; Williams, J. S.; Pogany, A. P.; Sood, D. K.; Collins, G. A.

1995-04-01

Nickel silicide formation during the annealing of very high dose (≥4.5×1017 ions/cm2) Si implanted Ni has been investigated, using ion beam analytical techniques, electron microscopy, and x-ray diffraction analysis. An initial amorphous Si-Ni alloy, formed as a result of high dose ion implantation, first crystallized to Ni2Si upon annealing in the temperature region of 200-300 °C. This was followed by the formation of Ni5Si2 in the temperature region of 300-400 °C and then by Ni3Si at 400-600 °C. The Ni3Si layer was found to have an epitaxial relationship with the substrate Ni, which was determined as Ni3Si<100>∥Ni<100> and Ni3Si<110>∥Ni<110> for Ni(100) samples. The minimum channeling yield in the 2 MeV He Rutherford backscattering and channeling spectra of this epitaxial layer improved with higher annealing temperatures up to 600 °C, and reached a best value measured at about 8%. However, the epitaxial Ni3Si dissolved after long time annealing at 600 °C or annealing at higher temperatures to liberate soluble Si into the Ni substrate. The epitaxy is attributed to the excellent lattice match between the Ni3Si and the Ni. The annealing behavior follows the predictions of the Ni-Si phase diagram for this nickel-rich binary system.

A comparative study of TiN and TiC: Oxidation resistance and retention of xenon at high temperature and under degraded vacuum

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gavarini, S.; Bes, R.; Millard-Pinard, N.

2011-01-01

Dense TiN and TiC samples were prepared by hot pressing using micrometric powders. Xenon species (simulating rare gas fission products) were then implanted into the ceramics. The samples were annealed for 1 h at 1500 deg. C under several degraded vacuums with P{sub O{sub 2}} varying from 10{sup -6} to 2x10{sup -4} mbars. The oxidation resistance of the samples and their retention properties with respect to preimplanted xenon species were analyzed using scanning electron microscopy, grazing incidence x-ray diffraction, Rutherford backscattering spectrometry, and nuclear backscattering spectrometry. Results indicate that TiC is resistant to oxidation and does not release xenon formore » P{sub O{sub 2{<=}}}6x10{sup -6} mbars. When P{sub O{sub 2}} increases, geometric oxide crystallites appear at the surface depending on the orientation and size of TiC grains. These oxide phases are Ti{sub 2}O{sub 3}, Ti{sub 3}O{sub 5}, and TiO{sub 2}. Apparition of oxide crystallites is associated with the beginning of xenon release. TiC surface is completely covered by the oxide phases at P{sub O{sub 2}}=2x10{sup -4} mbars up to a depth of 3 {mu}m and the xenon is then completely released. For TiN samples, the results show a progressive apparition of oxide crystallites (Ti{sub 3}O{sub 5} mainly) at the surface when P{sub O{sub 2}} increases. The presence of the oxide crystallites is also directly correlated with xenon release, the more oxide crystallites are growing the more xenon is released. TiN surface is completely covered by an oxide layer at P{sub O{sub 2}}=2x10{sup -4} mbars up to 1 {mu}m. A correlation between the initial fine microstructure of TiN and the properties of the growing layer is suggested.« less

High resolution electron backscatter diffraction (EBSD) data from calcite biominerals in recent gastropod shells.

PubMed

Pérez-Huerta, Alberto; Dauphin, Yannicke; Cuif, Jean Pierre; Cusack, Maggie

2011-04-01

Electron backscatter diffraction (EBSD) is a microscopy technique that reveals in situ crystallographic information. Currently, it is widely used for the characterization of geological materials and in studies of biomineralization. Here, we analyze high resolution EBSD data from biogenic calcite in two mollusk taxa, Concholepas and Haliotis, previously used in the understanding of complex biomineralization and paleoenvironmental studies. Results indicate that Concholepas has less ordered prisms than in Haliotis, and that in Concholepas the level of order is not homogenous in different areas of the shell. Overall, the usefulness of data integration obtained from diffraction intensity and crystallographic orientation maps, and corresponding pole figures, is discussed as well as its application to similar studies. © 2010 Elsevier Ltd. All rights reserved.

Understanding deformation with high angular resolution electron backscatter diffraction (HR-EBSD)

NASA Astrophysics Data System (ADS)

Britton, T. B.; Hickey, J. L. R.

2018-01-01

High angular resolution electron backscatter diffraction (HR-EBSD) affords an increase in angular resolution, as compared to ‘conventional’ Hough transform based EBSD, of two orders of magnitude, enabling measurements of relative misorientations of 1 x 10-4 rads (~ 0.006°) and changes in (deviatoric) lattice strain with a precision of 1 x 10-4. This is achieved through direct comparison of two or more diffraction patterns using sophisticated cross-correlation based image analysis routines. Image shifts between zone axes in the two-correlated diffraction pattern are measured with sub-pixel precision and this realises the ability to measure changes in interplanar angles and lattice orientation with a high degree of sensitivity. These shifts are linked to strains and lattice rotations through simple geometry. In this manuscript, we outline the basis of the technique and two case studies that highlight its potential to tackle real materials science challenges, such as deformation patterning in polycrystalline alloys.

Patterned low temperature copper-rich deposits using inkjet printing

NASA Astrophysics Data System (ADS)

Rozenberg, Gregor G.; Bresler, Eric; Speakman, Stuart P.; Jeynes, Chris; Steinke, Joachim H. G.

2002-12-01

A PZT piezoelectric ceramic research drop-on-demand inkjet print head operating in bend mode was used as a means of delivering a copper precursor, vinyltrimethylsilane copper (+1) hexafluoroacetylacetonate, in a controlled and placement accurate fashion. The reagent disproportionates at low temperature (<200 °C), to deposit copper on glass. These deposits are shown to be more than 90% copper by weight by electron probe microanalysis and microbeam Rutherford backscattering spectroscopy. Microscopy shows a deposit diameter and three-dimensional profile that suggests a complex deposition and conversion mechanism. Our findings represent an important step towards the manufacture of electronic devices by entirely nonlithographic means.

Growth and process identification of CuInS 2 on GaP by chemical vapor deposition

NASA Astrophysics Data System (ADS)

Hwang, H. L.; Sun, C. Y.; Fang, C. S.; Chang, S. D.; Cheng, C. H.; Yang, M. H.; Lin, H. H.; Tuwan-Mu, H.

1981-10-01

Experimental techniques for growing CuInS 2 layers on GaP substrates by the metalorganic method have been developed. Hydrogen sulfide gas together with the vapors of CuCl( NCCH3) n and InCl3( NCCH3) both of which were generated by bubbling nitrogen through sources, using a solvent of acetonitride, were used as transport agents. Various characterization techniques such as atomic absorption (AA), neutron activation analysis (NAA), energy dispersive analysis by X-rays (EDAX), Rutherford back-scattering analysis (RBS), and X-ray analyses were used to help understand the fundamental mechanism of the CVD growth.

Characterization of inertial confinement fusion (ICF) targets using PIXE, RBS, and STIM analysis.

PubMed

Li, Yongqiang; Liu, Xue; Li, Xinyi; Liu, Yiyang; Zheng, Yi; Wang, Min; Shen, Hao

2013-08-01

Quality control of the inertial confinement fusion (ICF) target in the laser fusion program is vital to ensure that energy deposition from the lasers results in uniform compression and minimization of Rayleigh-Taylor instabilities. The technique of nuclear microscopy with ion beam analysis is a powerful method to provide characterization of ICF targets. Distribution of elements, depth profile, and density image of ICF targets can be identified by particle-induced X-ray emission, Rutherford backscattering spectrometry, and scanning transmission ion microscopy. We present examples of ICF target characterization by nuclear microscopy at Fudan University in order to demonstrate their potential impact in assessing target fabrication processes.

Reaction of metals in lower earth orbit during Space Shuttle flight 41-G

NASA Technical Reports Server (NTRS)

Fromhold, A. T., Jr.; Daneshvar, K.; Whitaker, A. F.; Little, S. A.

1985-01-01

The effects of ambient space environment on metals were studied by exposing specimens of Cu, Ag, Au, Ni, Cr, Al, Pt, and Pd on flight 41-G (STS-17). Data obtained by ellipsometry (ELL), Rutherford backscattering (RBS), and proton-induced X-ray emission (PIXE) before and after flight are summarized. Although the effects of space environment were most pronounced for silver, there were significant changes in the surface properties of the majority of the other metals. The surface optical constants proved to be the most sensitive measure of surface changes. These changes are attributed to the interaction of the metals with atomic oxygen.

Radiation damage buildup by athermal defect reactions in nickel and concentrated nickel alloys

DOE PAGES

Zhang, S.; Nordlund, K.; Djurabekova, F.; ...

2017-04-12

We develop a new method using binary collision approximation simulating the Rutherford backscattering spectrometry in channeling conditions (RBS/C) from molecular dynamics atom coordinates of irradiated cells. The approach allows comparing experimental and simulated RBS/C signals as a function of depth without fitting parameters. The simulated RBS/C spectra of irradiated Ni and concentrated solid solution alloys (CSAs, NiFe and NiCoCr) show a good agreement with the experimental results. The good agreement indicates the damage evolution under damage overlap conditions in Ni and CSAs at room temperature is dominated by defect recombination and migration induced by irradiation rather than activated thermally.

An approach to tune the amplitude of surface ripple patterns

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kumar, Tanuj; Kanjilal, D.; Kumar, Ashish

An approach is presented to tune the amplitude of ripple patterns using ion beam. By varying the depth location of amorphous/crystalline interface, ripple patterns of different amplitude with similar wavelength were grown on the surface of Si (100) using 50 keV Ar{sup +} beam irradiation. Atomic force microscopy study demonstrates the tuning of amplitude of ripples patterns for wide range. Rutherford backscattering channeling measurement was performed to measure the depth location of amorphous/crystalline interface. It is postulated that the ion beam stimulated solid flow inside the amorphous layer controls the wavelength, whereas mass rearrangement at amorphous/crystalline interface controls the amplitude.

Stress in recrystallized quartz by electron backscatter diffraction mapping

NASA Astrophysics Data System (ADS)

Llana-Fúnez, S.

2017-07-01

The long-term state of stress at middle and lower crustal depths can be estimated through the study of the microstructure of exhumed rocks from active and/or ancient shear zones. Constitutive equations for deformation mechanisms in experimentally deformed rocks relate differential stress to the size of recrystallized grains. Cross et al. (2017) take advantage of electron backscatter diffraction mapping to systematically separate new recrystallized grains from host grains on the basis of the measurable lattice distorsion within the grains. They produce the first calibrated piezometer for quartz with this technique, reproducing within error a previous calibration based on optical microscopy.

Digital direct electron imaging of energy-filtered electron backscatter diffraction patterns

NASA Astrophysics Data System (ADS)

Vespucci, S.; Winkelmann, A.; Naresh-Kumar, G.; Mingard, K. P.; Maneuski, D.; Edwards, P. R.; Day, A. P.; O'Shea, V.; Trager-Cowan, C.

2015-11-01

Electron backscatter diffraction is a scanning electron microscopy technique used to obtain crystallographic information on materials. It allows the nondestructive mapping of crystal structure, texture, and strain with a lateral and depth resolution on the order of tens of nanometers. Electron backscatter diffraction patterns (EBSPs) are presently acquired using a detector comprising a scintillator coupled to a digital camera, and the crystallographic information obtainable is limited by the conversion of electrons to photons and then back to electrons again. In this article we will report the direct acquisition of energy-filtered EBSPs using a digital complementary metal-oxide-semiconductor hybrid pixel detector, Timepix. We show results from a range of samples with different mass and density, namely diamond, silicon, and GaN. Direct electron detection allows the acquisition of EBSPs at lower (≤5 keV) electron beam energies. This results in a reduction in the depth and lateral extension of the volume of the specimen contributing to the pattern and will lead to a significant improvement in lateral and depth resolution. Direct electron detection together with energy filtering (electrons having energy below a specific value are excluded) also leads to an improvement in spatial resolution but in addition provides an unprecedented increase in the detail in the acquired EBSPs. An increase in contrast and higher-order diffraction features are observed. In addition, excess-deficiency effects appear to be suppressed on energy filtering. This allows the fundamental physics of pattern formation to be interrogated and will enable a step change in the use of electron backscatter diffraction (EBSD) for crystal phase identification and the mapping of strain. The enhancement in the contrast in high-pass energy-filtered EBSD patterns is found to be stronger for lighter, less dense materials. The improved contrast for such materials will enable the application of the EBSD technique to be expanded to materials for which conventional EBSD analysis is not presently practicable.

Energy dependence of the spatial distribution of inelastically scattered electrons in backscatter electron diffraction

NASA Astrophysics Data System (ADS)

Ram, Farangis; De Graef, Marc

2018-04-01

In an electron backscatter diffraction pattern (EBSP), the angular distribution of backscattered electrons (BSEs) depends on their energy. Monte Carlo modeling of their depth and energy distributions suggests that the highest energy BSEs are more likely to hit the bottom of the detector than the top. In this paper, we examine experimental EBSPs to validate the modeled angular BSE distribution. To that end, the Kikuchi bandlet method is employed to measure the width of Kikuchi bands in both modeled and measured EBSPs. The results show that in an EBSP obtained with a 15 keV primary probe, the width of a Kikuchi band varies by about 0 .4∘ from the bottom of the EBSD detector to its top. The same is true for a simulated pattern that is composed of BSEs with 5 keV to 15 keV energies, which validates the Monte Carlo simulations.

Comparison of quartz crystallographic preferred orientations identified with optical fabric analysis, electron backscatter and neutron diffraction techniques.

PubMed

Hunter, N J R; Wilson, C J L; Luzin, V

2017-02-01

Three techniques are used to measure crystallographic preferred orientations (CPO) in a naturally deformed quartz mylonite: transmitted light cross-polarized microscopy using an automated fabric analyser, electron backscatter diffraction (EBSD) and neutron diffraction. Pole figure densities attributable to crystal-plastic deformation are variably recognizable across the techniques, particularly between fabric analyser and diffraction instruments. Although fabric analyser techniques offer rapid acquisition with minimal sample preparation, difficulties may exist when gathering orientation data parallel with the incident beam. Overall, we have found that EBSD and fabric analyser techniques are best suited for studying CPO distributions at the grain scale, where individual orientations can be linked to their source grain or nearest neighbours. Neutron diffraction serves as the best qualitative and quantitative means of estimating the bulk CPO, due to its three-dimensional data acquisition, greater sample area coverage, and larger sample size. However, a number of sampling methods can be applied to FA and EBSD data to make similar approximations. © 2016 The Authors Journal of Microscopy © 2016 Royal Microscopical Society.

Determination of dislocation density by electron backscatter diffraction and X-ray line profile analysis in ferrous lath martensite

DOE Office of Scientific and Technical Information (OSTI.GOV)

Berecz, Tibor, E-mail: berecz@eik.bme.hu; Jenei, Péter, E-mail: jenei@metal.elte.hu; Csóré, András, E-mail: csorean@gmail.com

2016-03-15

The microstructure and the dislocation density in as-quenched ferrous lath martensite were studied by different methods. The blocks, packets and variants formed due to martensitic transformation were identified and their sizes were determined by electron backscatter diffraction (EBSD). Concomitant transmission electron microscopy (TEM) investigation revealed that the laths contain subgrains with the size between 50 and 100 nm. A novel evaluation procedure of EBSD images was elaborated for the determination of the density and the space distribution of geometrically necessary dislocations from the misorientation distribution. The total dislocation density obtained by X-ray diffraction line profile analysis was in good agreementmore » with the value determined by EBSD, indicating that the majority of dislocations formed due to martensitic transformation during quenching are geometrically necessary dislocations.« less

Characterization of hybrid cobalt-porous silicon systems: protective effect of the Matrix in the metal oxidation

PubMed Central

2012-01-01

In the present work, the characterization of cobalt-porous silicon (Co-PSi) hybrid systems is performed by a combination of magnetic, spectroscopic, and structural techniques. The Co-PSi structures are composed by a columnar matrix of PSi with Co nanoparticles embedded inside, as determined by Transmission Electron Microscopy (TEM). The oxidation state, crystalline structure, and magnetic behavior are determined by X-Ray Absorption Spectroscopy (XAS) and Alternating Gradient Field Magnetometry (AGFM). Additionally, the Co concentration profile inside the matrix has been studied by Rutherford Backscattering Spectroscopy (RBS). It is concluded that the PSi matrix can be tailored to provide the Co nanoparticles with extra protection against oxidation. PMID:22938050

Surface structure of imidazolium-based ionic liquids: Quantitative comparison between simulations and high-resolution RBS measurements.

PubMed

Nakajima, Kaoru; Nakanishi, Shunto; Lísal, Martin; Kimura, Kenji

2016-03-21

Elemental depth profiles of 1-alkyl-3-methylimidazolium bis(trifluoromethanesulfonyl)imide ([CnMIM][TFSI], n = 4, 6, 8) are measured using high-resolution Rutherford backscattering spectroscopy (HRBS). The profiles are compared with the results of molecular dynamics (MD) simulations. Both MD simulations and HRBS measurements show that the depth profiles deviate from the uniform stoichiometric composition in the surface region, showing preferential orientations of ions at the surface. The MD simulations qualitatively reproduce the observed HRBS profiles but the agreement is not satisfactory. The observed discrepancy is ascribed to the capillary waves. By taking account of the surface roughness induced by the capillary waves, the agreement becomes almost perfect.

Evaluation of chemical conversion material (protective coating) exposed to space environmental conditions

NASA Technical Reports Server (NTRS)

Edwards, D. L.

1993-01-01

This report focuses on the development of an operational Rutherford backscattering spectrometry (RBS) system and shows the application of such a system on a space environmental test. Thin films of aluminum and tantalum were deposited on diamond substrates. These films were anodized and preexposure characterization spectra obtained using RBS and total hemispherical reflectance. The samples were exposed to energetic protons then postexposure characterization spectra was obtained using the same techniques. Conclusions based on the comparison of preexposure and postexposure spectra are presented. RBS comparison spectra show no change in the metal/metal oxide interface, while the comparison reflectance data indicate change. Explanations for this reflectance change are presented in this report.

Determination of the composition of HgCdTe oxide films by neutron activation analysis

NASA Astrophysics Data System (ADS)

Gnade, B.; Simmons, A.; Little, D.; Strong, R.

1987-04-01

The composition of HgCdTe oxides grown by anodic oxidation in a standard KOH/ethylene glycol solution has been determined by neutron activation analysis (NAA). This technique is not hindered by the difficulties normally associated with methods using ion beams or electron beams. Neutron activation analysis has the advantage of being quantitative, and also NAA is not affected by the chemical composition of the matrix. The analysis of the KOH/ethylene glycol oxide film by neutron activation yields Hg:Cd:Te ratios of 0.534:0.19:1, in close agreement with Rutherford backscattering spectroscopy analysis (R.L. Strong et al., J. Vac. Sci. Technol. A4 (4) (1986) 1992).

DOE Office of Scientific and Technical Information (OSTI.GOV)

Korolev, D. S.; Mikhaylov, A. N.; Belov, A. I.

The composition and structure of silicon surface layers subjected to combined gallium and nitrogen ion implantation with subsequent annealing have been studied by the X-ray photoelectron spectroscopy, Rutherford backscattering, electron spin resonance, Raman spectroscopy, and transmission electron microscopy techniques. A slight redistribution of the implanted atoms before annealing and their substantial migration towards the surface during annealing depending on the sequence of implantations are observed. It is found that about 2% of atoms of the implanted layer are replaced with gallium bonded to nitrogen; however, it is impossible to detect the gallium-nitride phase. At the same time, gallium-enriched inclusions containingmore » ∼25 at % of gallium are detected as candidates for the further synthesis of gallium-nitride inclusions.« less

Surface structure of imidazolium-based ionic liquids: Quantitative comparison between simulations and high-resolution RBS measurements

NASA Astrophysics Data System (ADS)

Nakajima, Kaoru; Nakanishi, Shunto; Lísal, Martin; Kimura, Kenji

2016-03-01

Elemental depth profiles of 1-alkyl-3-methylimidazolium bis(trifluoromethanesulfonyl)imide ([CnMIM][TFSI], n = 4, 6, 8) are measured using high-resolution Rutherford backscattering spectroscopy (HRBS). The profiles are compared with the results of molecular dynamics (MD) simulations. Both MD simulations and HRBS measurements show that the depth profiles deviate from the uniform stoichiometric composition in the surface region, showing preferential orientations of ions at the surface. The MD simulations qualitatively reproduce the observed HRBS profiles but the agreement is not satisfactory. The observed discrepancy is ascribed to the capillary waves. By taking account of the surface roughness induced by the capillary waves, the agreement becomes almost perfect.

Structural and optical properties of Ga auto-incorporated InAlN epilayers

NASA Astrophysics Data System (ADS)

Taylor, E.; Smith, M. D.; Sadler, T. C.; Lorenz, K.; Li, H. N.; Alves, E.; Parbrook, P. J.; Martin, R. W.

2014-12-01

InAlN epilayers deposited on thick GaN buffer layers grown by metalorganic chemical vapour deposition (MOCVD) revealed an auto-incorporation of Ga when analysed by wavelength dispersive x-ray (WDX) spectroscopy and Rutherford backscattering spectrometry (RBS). Samples were grown under similar conditions with the change in reactor flow rate resulting in varying Ga contents of 12-24%. The increase in flow rate from 8000 to 24 000 sccm suppressed the Ga auto-incorporation which suggests that the likely cause is from residual Ga left behind from previous growth runs. The luminescence properties of the resultant InAlGaN layers were investigated using cathodoluminescence (CL) measurements.

Hydrogen transport behavior of beryllium

NASA Astrophysics Data System (ADS)

Anderl, R. A.; Hankins, M. R.; Longhurst, G. R.; Pawelko, R. J.; Macaulay-Newcombe, R. G.

1992-12-01

Beryllium is being evaluated for use as a plasma-facing material in the International Thermonuclear Experimental Reactor (ITER). One concern in the evaluation is the retention and permeation of tritium implanted into the plasma-facing surface. We performed laboratory-scale studies to investigate mechanisms that influence hydrogen transport and retention in beryllium foil specimens of rolled powder metallurgy product and rolled ingot cast beryllium. Specimen characterization was accomplished using scanning electron microscopy, Auger electron spectroscopy, and Rutherford backscattering spectrometry (RBS) techniques. Hydrogen transport was investigated using ion-beam permeation experiments and nuclear reaction analysis (NRA). Results indicate that trapping plays a significant role in permeation, re-emission, and retention, and that surface processes at both upstream and downstream surfaces are also important.

Clustering of gold particles in Au implanted CrN thin films: The effect on the SPR peak position

NASA Astrophysics Data System (ADS)

Novaković, M.; Popović, M.; Schmidt, E.; Mitrić, M.; Bibić, N.; Rakočević, Z.; Ronning, C.

2017-12-01

We report on the formation of gold particles in 280 nm thin polycrystalline CrN layers caused by Au+ ion implantation. The CrN layers were deposited at 150 °C by d.c. reactive sputtering on Si(100) wafers and then implanted at room temperature with 150 keV Au+ ions to fluences of 2 × 1016 cm-2 to 4.1 × 1016 cm-2. The implanted layers were analysed by the means of Rutherford backscattering spectrometry, X-ray diffraction, atomic force microscopy and spectroscopic ellipsometry measurements. The results revealed that the Au atoms are situated in the near-surface region of the implanted CrN layers. At the fluence of 2 × 1016 cm-2 the formation of Au particles of ∼200 nm in diameter has been observed. With increasing Au ion fluence the particles coalesce into clusters with dimensions of ∼1.7 μm. The synthesized particles show a strong absorption peak associated with the excitation of surface plasmon resonances (SPR). The position of the SPR peak shifted in the range of 426.8-690.5 nm when the Au+ ion fluence was varied from 2 × 1016 cm-2 to 4.1 × 1016 cm-2. A correlation of the shift in the peak wavelength caused by the change in the particles size and clustering has been revealed, suggesting that the interaction between Au particles dominate the surface plasmon resonance effect.

Microwave-assisted green synthesis of superparamagnetic nanoparticles using fruit peel extracts: surface engineering, T 2 relaxometry, and photodynamic treatment potential.

PubMed

Bano, Shazia; Nazir, Samina; Nazir, Alia; Munir, Saeeda; Mahmood, Tariq; Afzal, Muhammad; Ansari, Farzana Latif; Mazhar, Kehkashan

2016-01-01

Superparamagnetic iron oxide nanoparticles (SPIONs) have the potential to be used as multimodal imaging and cancer therapy agents due to their excellent magnetism and ability to generate reactive oxygen species when exposed to light. We report the synthesis of highly biocompatible SPIONs through a facile green approach using fruit peel extracts as the biogenic reductant. This green synthesis protocol involves the stabilization of SPIONs through coordination of different phytochemicals. The SPIONs were functionalized with polyethylene glycol (PEG)-6000 and succinic acid and were extensively characterized by X-ray diffraction analysis, field emission scanning electron microscopy, energy-dispersive X-ray spectroscopy, atomic force microscopy, Rutherford backscattering spectrometry, diffused reflectance spectroscopy, fluorescence emission, Fourier-transform infrared spectroscopy, ultraviolet-visible spectroscopy, and magnetization analysis. The developed SPIONs were found to be stable, almost spherical with a size range of 17-25 nm. They exhibited excellent water dispersibility, colloidal stability, and relatively high R 2 relaxivity (225 mM(-1) s(-1)). Cell viability assay data revealed that PEGylation or carboxylation appears to significantly shield the surface of the particles but does not lead to improved cytocompatibility. A highly significant increase of reactive oxygen species in light-exposed samples was found to play an important role in the photokilling of human cervical epithelial malignant carcinoma (HeLa) cells. The bio-SPIONs developed are highly favorable for various biomedical applications without risking interference from potentially toxic reagents.

Suppression effect of silicon (Si) on Er{sup 3+} 1.54μm excitation in ZnO thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xu, Bo; Lu, Fei, E-mail: lufei@sdu.edu.cn; Fan, Ranran

2016-08-15

We have investigated the photoluminescence (PL) characteristics of ZnO:Er thin films on Si (100) single crystal and SiO{sub 2}-on-silicon (SiO{sub 2}) substrates, synthesized by radio frequency magnetron sputtering. Rutherford backscattering/channeling spectrometry (RBS), X-ray diffraction (XRD) and atomic force microscope (AFM) were used to analyze the properties of thin films. The diffusion depth profiles of Si were determined by second ion mass spectrometry (SIMS). Infrared spectra were obtained from the spectrometer and related instruments. Compared with the results at room temperature (RT), PL (1.54μm) intensity increased when samples were annealed at 250°C and decreased when at 550°C. A new peak atmore » 1.15μm from silicon (Si) appeared in 550°C samples. The Si dopants in ZnO film, either through the diffusion of Si from the substrate or ambient, directly absorbed the energy of pumping light and resulted in the suppression of Er{sup 3+} 1.54μm excitation. Furthermore, the energy transmission efficiency between Si and Er{sup 3+} was very low when compared with silicon nanocrystal (Si-NC). Both made the PL (1.54μm) intensity decrease. All the data in experiments proved the negative effects of Si dopants on PL at 1.54μm. And further research is going on.« less

Microwave-assisted green synthesis of superparamagnetic nanoparticles using fruit peel extracts: surface engineering, T2 relaxometry, and photodynamic treatment potential

PubMed Central

Bano, Shazia; Nazir, Samina; Nazir, Alia; Munir, Saeeda; Mahmood, Tariq; Afzal, Muhammad; Ansari, Farzana Latif; Mazhar, Kehkashan

2016-01-01

Superparamagnetic iron oxide nanoparticles (SPIONs) have the potential to be used as multimodal imaging and cancer therapy agents due to their excellent magnetism and ability to generate reactive oxygen species when exposed to light. We report the synthesis of highly biocompatible SPIONs through a facile green approach using fruit peel extracts as the biogenic reductant. This green synthesis protocol involves the stabilization of SPIONs through coordination of different phytochemicals. The SPIONs were functionalized with polyethylene glycol (PEG)-6000 and succinic acid and were extensively characterized by X-ray diffraction analysis, field emission scanning electron microscopy, energy-dispersive X-ray spectroscopy, atomic force microscopy, Rutherford backscattering spectrometry, diffused reflectance spectroscopy, fluorescence emission, Fourier-transform infrared spectroscopy, ultraviolet-visible spectroscopy, and magnetization analysis. The developed SPIONs were found to be stable, almost spherical with a size range of 17–25 nm. They exhibited excellent water dispersibility, colloidal stability, and relatively high R2 relaxivity (225 mM−1 s−1). Cell viability assay data revealed that PEGylation or carboxylation appears to significantly shield the surface of the particles but does not lead to improved cytocompatibility. A highly significant increase of reactive oxygen species in light-exposed samples was found to play an important role in the photokilling of human cervical epithelial malignant carcinoma (HeLa) cells. The bio-SPIONs developed are highly favorable for various biomedical applications without risking interference from potentially toxic reagents. PMID:27570452

Testing and Comparison of Imaging Detectors for Electrons in the Energy Range 10-20 keV

NASA Astrophysics Data System (ADS)

Matheson, J.; Moldovan, G.; Kirkland, A.; Allinson, N.; Abrahams, J. P.

2017-11-01

Interest in direct detectors for low-energy electrons has increased markedly in recent years. Detection of electrons in the energy range up to low tens of keV is important in techniques such as photoelectron emission microscopy (PEEM) and electron backscatter diffraction (EBSD) on scanning electron microscopes (SEMs). The PEEM technique is used both in the laboratory and on synchrotron light sources worldwide. The ubiquity of SEMs means that there is a very large market for EBSD detectors for materials studies. Currently, the most widely used detectors in these applications are based on indirect detection of incident electrons. Examples include scintillators or microchannel plates (MCPs), coupled to CCD cameras. Such approaches result in blurring in scintillators/phosphors, distortions in optical systems, and inefficiencies due the limited active area of MCPs. In principle, these difficulties can be overcome using direct detection in a semiconductor device. Growing out of a feasibility study into the use of a direct detector for use on an XPEEM, we have built at Rutherford Appleton Laboratory a system to illuminate detectors with an electron beam of energy up to 20 keV . We describe this system in detail. It has been used to measure the performance of a custom back-thinned monolithic active pixel sensor (MAPS), a detector based on the Medipix2 chip, and a commercial detector based on MCPs. We present a selection of the results from these measurements and compare and contrast different detector types.

Evidence of room temperature ferromagnetism in argon/oxygen annealed TiO2 thin films deposited by electron beam evaporation technique

NASA Astrophysics Data System (ADS)

Mohanty, P.; Kabiraj, D.; Mandal, R. K.; Kulriya, P. K.; Sinha, A. S. K.; Rath, Chandana

2014-04-01

TiO2 thin films deposited by electron beam evaporation technique annealed in either O2 or Ar atmosphere showed ferromagnetism at room temperature. The pristine amorphous film demonstrates anatase phase after annealing under Ar/O2 atmosphere. While the pristine film shows a super-paramagnetic behavior, both O2 and Ar annealed films display hysteresis at 300 K. X-ray photo emission spectroscopy (XPS), Raman spectroscopy, Rutherford's backscattering spectroscopy (RBS), cross-sectional transmission electron microscopy (TEM) and energy dispersive X-ray spectroscopy (EDS) were used to refute the possible role of impurities/contaminants in magnetic properties of the films. The saturation magnetization of the O2 annealed film is found to be higher than the Ar annealed one. It is revealed from shifting of O 1s and Ti 2p core level spectra as well as from the enhancement of high binding energy component of O 1s spectra that the higher magnetic moment is associated with higher oxygen vacancies. In addition, O2 annealed film demonstrates better crystallinity, uniform deposition and smoother surface than that of the Ar annealed one from glancing angle X-ray diffraction (GAXRD) and atomic force microscopy (AFM). We conclude that although ferromagnetism is due to oxygen vacancies, the higher magnetization in O2 annealed film could be due to crystallinity, which has been observed earlier in Co doped TiO2 film deposited by pulsed laser deposition (Mohanty et al., 2012 [10]).

Oxygen vacancy induced phase formation and room temperature ferromagnetism in undoped and Co-doped TiO2 thin films

NASA Astrophysics Data System (ADS)

Mohanty, P.; Mishra, N. C.; Choudhary, R. J.; Banerjee, A.; Shripathi, T.; Lalla, N. P.; Annapoorni, S.; Rath, Chandana

2012-08-01

TiO2 and Co-doped TiO2 (CTO) thin films deposited at various oxygen partial pressures by pulsed laser deposition exhibit room temperature ferromagnetism (RTFM) independent of their phase. Films deposited at 0.1 mTorr oxygen partial pressure show a complete rutile phase confirmed from glancing angle x-ray diffraction and Raman spectroscopy. At the highest oxygen partial pressure, i.e. 300 mTorr, although the TiO2 film shows a complete anatase phase, a small peak corresponding to the rutile phase along with the anatase phase is identified in the case of CTO film. An increase in O to Ti/(Ti+Co) ratio with increase in oxygen partial pressure is observed from Rutherford backscattering spectroscopy. It is revealed from x-ray photoelectron spectroscopy (XPS) that oxygen vacancies are found to be higher in the CTO film than TiO2, while the valency of cobalt remains in the +2 state. Therefore, the CTO film deposited at 300 mTorr does not show a complete anatase phase unlike the TiO2 film deposited at the same partial pressure. We conclude that RTFM in both films is not due to impurities/contaminants, as confirmed from XPS depth profiling and cross-sectional transmission electron microscopy (TEM), but due to oxygen vacancies. The magnitude of moment, however, depends not only on the phase of TiO2 but also on the crystallinity of the films.

Atomic layer deposited TaCy metal gates: Impact on microstructure, electrical properties, and work function on HfO2 high-k dielectrics

NASA Astrophysics Data System (ADS)

Triyoso, D. H.; Gregory, R.; Schaeffer, J. K.; Werho, D.; Li, D.; Marcus, S.; Wilk, G. D.

2007-11-01

TaCy has been reported to have the appropriate work function for negative metal-oxide semiconductor metal in high-k metal-oxide field-effect transistors. As device size continues to shrink, a conformal deposition for metal gate electrodes is needed. In this work, we report on the development and characterization of a novel TaCy process by atomic layer deposition (ALD). Detailed physical properties of TaCy films are studied using ellipsometry, a four-point probe, Rutherford backscattering spectrometry (RBS), x-ray photoelectron spectroscopy (XPS), and x-ray diffraction (XRD). RBS and XPS analysis indicate that TaCy films are near-stoichiometric, nitrogen free, and have low oxygen impurities. Powder XRD spectra showed that ALD films have a cubic microstructure. XPS carbon bonding studies revealed that little or no glassy carbon is present in the bulk of the film. Excellent electrical properties are obtained using ALD TaCy as a metal gate electrode. Well-behaved capacitance-voltage characteristics with ALD HfO2 gate dielectrics are demonstrated for TaCy thicknesses of 50, 100, and 250 Å. A low fixed charge (˜2-4×10-11 cm-2) is observed for all ALD HfO2/ALD TaCy devices. Increasing the thickness of ALD TaCy results in a decrease in work function (4.77 to 4.54 eV) and lower threshold voltages.

Micro-cutting of silicon implanted with hydrogen and post-implantation thermal treatment

NASA Astrophysics Data System (ADS)

Jelenković, Emil V.; To, Suet; Sundaravel, B.; Xiao, Gaobo; Huang, Hu

2016-07-01

It was reported that non-amorphizing implantation by hydrogen has a potential in improving silicon machining. Post-implantation high-temperature treatment will affect implantation-induced damage, which can have impact on silicon machining. In this article, a relation of a thermal annealing of hydrogen implanted in silicon to micro-cutting experiment is investigated. Hydrogen ions were implanted into 4″ silicon wafers with 175 keV, 150 keV, 125 keV and doses of 2 × 1016 cm-2, 2 × 1016 cm-2 and 3 × 1016 cm-2, respectively. In this way, low hydrogen atom-low defect concentration was created in the region less than ~0.8 μm deep and high hydrogen atom-high defect concentration was obtained at silicon depth of ~0.8-1.5 μm. The post-implantation annealing was carried out at 300 and 400 °C in nitrogen for 1 h. Physical and electrical properties of implanted and annealed samples were characterized by secondary ion mass spectroscopy (SIMS), X-ray diffraction (XRD), Rutherford backscattering (RBS) and nanoindentation. Plunge cutting experiment was carried out in <110> and <100> silicon crystal direction. The critical depth of cut and cutting force were monitored and found to be influenced by the annealing. The limits of hydrogen implantation annealing contribution to the cutting characteristics of silicon are discussed in light of implantation process and redistribution of hydrogen and defects generation during annealing process.

Bioactivity and cytocompatibility of zirconia (ZrO(2)) films fabricated by cathodic arc deposition.

PubMed

Liu, Xuanyong; Huang, Anping; Ding, Chuanxian; Chu, Paul K

2006-07-01

Zirconium oxide thin films were fabricated on silicon wafers using a filtered cathodic arc system in concert with oxygen plasma. The structure and phase composition of the zirconium oxide thin films were characterized by atomic force microscopy (AFM), X-ray diffraction (XRD), Rutherford backscattering spectrometry (RBS), and transmission electron microscopy (TEM). The bioactivity was assessed by investigating the formation of apatite on the film surface after soaking in simulated body fluids. Bone marrow mesenchymal stem cells (BMMSC) were used to further evaluate the cytocompatibility of the materials. The results indicate that the films are composed of stoichiometric ZrO(2) and the composition is quite uniform throughout the thickness. Bone-like apatite can be formed on the surface of the ZrO(2) thin film in our SBF immersion experiments, suggesting that the surface is bioactive. The outermost layer of the ZrO(2) thin film comprises nano-sized particles that can be identified by AFM images taken on the thin film surface and TEM micrographs obtained from the interface between the ZrO(2) thin film and apatite layer. The nanostructured surface is believed to be the key factor that apatite is induced to precipitate on the surface. Bone marrow mesenchymal stem cells are observed to grow and proliferate in good states on the film surface. Our results show that ZrO(2) thin films fabricated by cathodic arc deposition exhibit favorable bioactivity and cytocompatibility.

Anisotropy of the apparent frequency dependence of backscatter in formalin fixed human myocardium.

PubMed

Hall, C S; Verdonk, E D; Wickline, S A; Perez, J E; Miller, J G

1997-01-01

Measurements of the frequency dependence of ultrasonic backscatter are presented for specific angles of insonification for regions of infarcted and noninfarcted human myocardium. A 5-MHz transducer was used to insonify cylindrical cores taken from 7 noninfarcted regions and 12 infarcted regions of the left ventricular free wall of 6 formalin-fixed human hearts explanted because of ischemic cardiomyopathy. The dependence of apparent (uncompensated for diffraction effects and attenuation) backscatter on frequency was approximated by a power-law dependence, magnitude of B(f)2 = afn. Under ideal conditions in a lossless medium, the effect of not compensating for the effects of diffraction and attenuation leads to the value of n to be 2.0 for Rayleigh scatterers while the frequency dependence of the fully compensated backscatter coefficient would be f4. The value of n was determined over the frequency range, 3-7 MHz. Both nonifarcted and infarcted myocardium exhibited anisotropy of the frequency dependence of backscatter, with maxima occurring at angles that were perpendicular to the predominant myofiber direction and minima when parallel to the fibers. Perpendicular insonification yielded results for n of 1.8 +/- 0.1 for noninfarcted myocardium and 1.2 +/- 0.1 for infarcted myocardium while parallel insonification yielded results of 0.4 +/- 0.1 for noninfarcted and 0.0 +/- 0.1 for infarcted myocardium. The functional form of the angle-dependent backscatter is similar for both noninfarcted and infarcted myocardium, although the frequency dependence is clearly different for both tissue states for all angles of insonification. The results of this study indicate that the anisotropy of the frequency dependence of backscatter may play a significant role in ultrasonic imaging and is an important consideration for ultrasonic tissue characterization in myocardium.

Use of reciprocal lattice layer spacing in electron backscatter diffraction pattern analysis

PubMed

Michael; Eades

2000-03-01

In the scanning electron microscope using electron backscattered diffraction, it is possible to measure the spacing of the layers in the reciprocal lattice. These values are of great use in confirming the identification of phases. The technique derives the layer spacing from the higher-order Laue zone rings which appear in patterns from many materials. The method adapts results from convergent-beam electron diffraction in the transmission electron microscope. For many materials the measured layer spacing compares well with the calculated layer spacing. A noted exception is for higher atomic number materials. In these cases an extrapolation procedure is described that requires layer spacing measurements at a range of accelerating voltages. This procedure is shown to improve the accuracy of the technique significantly. The application of layer spacing measurements in EBSD is shown to be of use for the analysis of two polytypes of SiC.

Electron backscatter diffraction as a domain analysis technique in BiFeO(3)-PbTiO(3) single crystals.

PubMed

Burnett, T L; Comyn, T P; Merson, E; Bell, A J; Mingard, K; Hegarty, T; Cain, M

2008-05-01

xBiFeO(3)-(1-x)PbTiO(3) single crystals were grown via a flux method for a range of compositions. Presented here is a study of the domain configuration in the 0.5BiFeO(3)-0.5PbTiO(3) composition using electron backscatter diffraction to demonstrate the ability of the technique to map ferroelastic domain structures at the micron and submicron scale. The micron-scale domains exhibit an angle of approximately 85 degrees between each variant, indicative of a ferroelastic domain wall in a tetragonal system with a spontaneous strain, c/a - 1 of 0.10, in excellent agreement with the lattice parameters derived from x-ray diffraction. Contrast seen in forescatter images is attributed to variations in the direction of the electrical polarization vector, providing images of ferroelectric domain patterns.

Growth and characterization of zirconium oxynitride films prepared by reactive direct current magnetron sputtering

NASA Astrophysics Data System (ADS)

Venkataraj, S.; Kappertz, O.; Jayavel, R.; Wuttig, M.

2002-09-01

Thin films of zirconium oxynitrides have been deposited onto Si(100) substrates at room temperature by reactive dc magnetron sputtering of a metallic Zr target in an argon-oxygen-nitrogen atmosphere. To prepare oxynitride films the sum of the O2 and N2 flow was kept at 3.5 sccm, while the relative nitrogen content of this mixture was changed stepwise from 0% to 100%. The film structure was determined by x-ray diffraction, while x-ray reflectometry was employed to determine the thickness, density, and surface roughness of the films. The optical properties have been studied by spectroscopic reflectance measurements. X-ray diffraction (XRD) determines that the as-deposited films are crystalline and do not change their monoclinic ZrO2 crystal structure even for nitrogen flows up to 80%. For pure argon-nitrogen sputtering, on the contrary, cubic zirconium nitride (ZrN) has been formed. Nevertheless, even though the crystal structure does not change with increasing nitrogen flow up to 80%, there is clear evidence from nitrogen incorporation from Rutherford backscattering experiments, optical spectroscopy, XRD, and x-ray reflectometry. The latter technique determines that the film density increases from 5.2 to 5.8 g/cm3 with increasing nitrogen flow from 0% to 80%. Simultaneously, the rate of sputtering increases from 0.17 to 0.6 m/s, while the film roughness decreases upon increasing N2 flow. Optical spectroscopy measurements of the film reflectance confirm that fully transparent films can be prepared up to a nitrogen flow of 80%. For these films, the band gap decreases from 4.52 to 3.59 eV with increasing N2 flow, while the refractive index at 650 nm simultaneously increases from 2.11 to 2.26. For 100% N2 flow, i.e., without any oxygen, films with a metallic reflectance are obtained.

A correlative approach to segmenting phases and ferrite morphologies in transformation-induced plasticity steel using electron back-scattering diffraction and energy dispersive X-ray spectroscopy.

PubMed

Gazder, Azdiar A; Al-Harbi, Fayez; Spanke, Hendrik Th; Mitchell, David R G; Pereloma, Elena V

2014-12-01

Using a combination of electron back-scattering diffraction and energy dispersive X-ray spectroscopy data, a segmentation procedure was developed to comprehensively distinguish austenite, martensite, polygonal ferrite, ferrite in granular bainite and bainitic ferrite laths in a thermo-mechanically processed low-Si, high-Al transformation-induced plasticity steel. The efficacy of the ferrite morphologies segmentation procedure was verified by transmission electron microscopy. The variation in carbon content between the ferrite in granular bainite and bainitic ferrite laths was explained on the basis of carbon partitioning during their growth. Copyright © 2014 Elsevier B.V. All rights reserved.

Compositional analysis and depth profiling of thin film CrO{sub 2} by heavy ion ERDA and standard RBS: a comparison

DOE Office of Scientific and Technical Information (OSTI.GOV)

Khamlich, S., E-mail: skhamlich@gmail.com; Department of Chemistry, Tshwane University of Technology, Private Bag X 680, Pretoria, 0001; The African Laser Centre, CSIR campus, P.O. Box 395, Pretoria

2012-08-15

Chromium dioxide (CrO{sub 2}) thin film has generated considerable interest in applied research due to the wide variety of its technological applications. It has been extensively investigated in recent years, attracting the attention of researchers working on spintronic heterostructures and in the magnetic recording industry. However, its synthesis is usually a difficult task due to its metastable nature and various synthesis techniques are being investigated. In this work a polycrystalline thin film of CrO{sub 2} was prepared by electron beam vaporization of Cr{sub 2}O{sub 3} onto a Si substrate. The polycrystalline structure was confirmed through XRD analysis. The stoichiometry andmore » elemental depth distribution of the deposited film were measured by ion beam nuclear analytical techniques heavy ion elastic recoil detection analysis (ERDA) and Rutherford backscattering spectrometry (RBS), which both have relative advantage over non-nuclear spectrometries in that they can readily provide quantitative information about the concentration and distribution of different atomic species in a layer. Moreover, the analysis carried out highlights the importance of complementary usage of the two techniques to obtain a more complete description of elemental content and depth distribution in thin films. - Graphical abstract: Heavy ion elastic recoil detection analysis (ERDA) and Rutherford backscattering spectrometry (RBS) both have relative advantage over non-nuclear spectrometries in that they can readily provide quantitative information about the concentration and distribution of different atomic species in a layer. Highlights: Black-Right-Pointing-Pointer Thin films of CrO{sub 2} have been grown by e-beam evaporation of Cr{sub 2}O{sub 3} target in vacuum. Black-Right-Pointing-Pointer The composition was determined by heavy ion-ERDA and RBS. Black-Right-Pointing-Pointer HI-ERDA and RBS provided information on the light and heavy elements, respectively.« less

Low-Energy Sputtering Research

NASA Technical Reports Server (NTRS)

Ray, P. K.; Shutthanandan, V.

1999-01-01

An experimental study is described to measure low-energy (less than 600 eV) sputtering yields of molybdenum with xenon ions using Rutherford backscattering spectroscopy (RBS) and secondary neutral mass spectroscopy (SNMS). An ion gun was used to generate the ion beam. The ion current density at the target surface was approximately 30 (micro)A/sq cm. For RBS measurements, the sputtered material was collected on a thin aluminum strip which was mounted on a semi-circular collector plate. The target was bombarded with 200 and 500 eV xenon ions at normal incidence. The differential sputtering yields were measured using the RBS method with 1 MeV helium ions. The differential yields were fitted with a cosine fitting function and integrated with respect to the solid angle to provide the total sputtering yields. The sputtering yields obtained using the RBS method are in reasonable agreement with those measured by other researchers using different techniques. For the SNMS measurements, 150 to 600 eV xenon ions were used at 50deg angle of incidence. The SNMS spectra were converted to sputtering yields for perpendicular incidence by normalizing SNMS spectral data at 500 eV with the yield measured by Rutherford backscattering spectrometry. Sputtering yields as well as the shape of the yield-energy curve obtained in this manner are in reasonable agreement with those measured by other researchers using different techniques. Sputtering yields calculated by using two semi-spherical formulations agree reasonably well with measured data. The isotopic composition of secondary ions were measured by bombarding copper with xenon ions at energies ranging from 100 eV to 1.5 keV. The secondary ion flux was found to be enriched in heavy isotopes at low incident ion energies. The heavy isotope enrichment was observed to decrease with increasing impact energy. Beyond 700 eV, light isotopes were sputtered preferentially with the enrichment remaining nearly constant.

Investigation of Cellular Interactions of Nanoparticles by Helium Ion Microscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Arey, Bruce W.; Shutthanandan, V.; Xie, Yumei

The helium ion mircroscope (HIM) probes light elements (e.g. C, N, O, P) with high contrast due to the large variation in secondary electron yield, which minimizes the necessity of specimen staining. A defining characteristic of HIM is its remarkable capability to neutralize charge by the implementation of an electron flood gun, which eliminates the need for coating non-conductive specimens for imaging at high resolution. In addition, the small convergence angle in HeIM offers a large depth of field (~5x FE-SEM), enabling tall structures to be viewed in focus within a single image. Taking advantage of these capabilities, we investigatemore » the interactions of engineered nanoparticles (NPs) at the surface of alveolar type II epithelial cells grown at the air-liquid interface (ALI). The increasing use of nanomaterials in a wide range of commercial applications has the potential to increase human exposure to these materials, but the impact of such exposure on human health is still unclear. One of the main routs of exposure is the respiratory tract, where alveolar epithelial cells present a vulnerable target at the interface with ambient air. Since the cellular interactions of NPs govern the cellular response and ultimately determine the impact on human health, our studies will help delineating relationships between particle properties and cellular interactions and response to better evaluate NP toxicity or biocompatibility. The Rutherford backscattered ion (RBI) is a helium ions imaging mode, which backscatters helium ions from every element except hydrogen, with a backscatter yield that depends on the atomic number of the target. Energy-sensitive backscatter analysis is being developed, which when combined with RBI image information, supports elemental identification at helium ion nanometer resolution. This capability will enable distinguishing NPs from cell surface structures with nanometer resolution.« less

Investigation of cellular interactions of nanoparticles by helium ion microscopy

NASA Astrophysics Data System (ADS)

Arey, B. W.; Shutthanandan, V.; Xie, Y.; Tolic, A.; Williams, N.; Orr, G.

2011-06-01

The helium ion microscope (HIM) probes light elements (e.g. C, N, O, P) with high contrast due to the large variation in secondary electron yield, which minimizes the necessity of specimen staining. A defining characteristic of HIM is its remarkable capability to neutralize charge by the implementation of an electron flood gun, which eliminates the need for coating non-conductive specimens for imaging at high resolution. In addition, the small convergence angle in HeIM offers a large depth of field (~5× FE-SEM), enabling tall structures to be viewed in focus within a single image. Taking advantage of these capabilities, we investigate the interactions of engineered nanoparticles (NPs) at the surface of alveolar type II epithelial cells grown at the airliquid interface (ALI). The increasing use of nanomaterials in a wide range of commercial applications has the potential to increase human exposure to these materials, but the impact of such exposure on human health is still unclear. One of the main routs of exposure is the respiratory tract, where alveolar epithelial cells present a vulnerable target at the interface with ambient air. Since the cellular interactions of NPs govern the cellular response and ultimately determine the impact on human health, our studies will help delineating relationships between particle properties and cellular interactions and response to better evaluate NP toxicity or biocompatibility. The Rutherford backscattered ion (RBI) is a helium ions imaging mode, which backscatters helium ions from every element except hydrogen, with a backscatter yield that depends on the atomic number of the target. Energy-sensitive backscatter analysis is being developed, which when combined with RBI image information, supports elemental identification at helium ion nanometer resolution. This capability will enable distinguishing NPs from cell surface structures with nanometer resolution.

Optical analysis of nanoparticles via enhanced backscattering facilitated by 3-D photonic nanojets

NASA Astrophysics Data System (ADS)

Li, Xu; Chen, Zhigang; Taflove, Allen; Backman, Vadim

2005-01-01

We report the phenomenon of ultra-enhanced backscattering of visible light by nanoparticles facilitated by the 3-D photonic nanojet a sub-diffraction light beam appearing at the shadow side of a plane-waveilluminated dielectric microsphere. Our rigorous numerical simulations show that backscattering intensity of nanoparticles can be enhanced up to eight orders of magnitude when locating in the nanojet. As a result, the enhanced backscattering from a nanoparticle with diameter on the order of 10 nm is well above the background signal generated by the dielectric microsphere itself. We also report that nanojet-enhanced backscattering is extremely sensitive to the size of the nanoparticle, permitting in principle resolving sub-nanometer size differences using visible light. Finally, we show how the position of a nanoparticle could be determined with subdiffractional accuracy by recording the angular distribution of the backscattered light. These properties of photonic nanojets promise to make this phenomenon a useful tool for optically detecting, differentiating, and sorting nanoparticles.

Oxygen depth profiling by resonant RBS in NiTi after plasma immersion ion implantation

NASA Astrophysics Data System (ADS)

Mändl, S.; Lindner, J. K. N.

2006-08-01

NiTi exhibits super-elastic as well as shape-memory properties, which results in a large potential application field in biomedical technology. Using oxygen ion implantation at elevated temperatures, it is possible to improve the biocompatibility. Resonant Rutherford backscattering spectroscopy (RRBS) is used to investigate the oxygen depth profile obtained after oxygen plasma immersion ion implantation (PIII) at 25 kV and 400-600 °C. At all temperatures, a layered structure consisting of TiO2/Ni3Ti/NiTi was found with sharp interfaces while no discernible content of oxygen inside Ni3Ti or nickel in TiO2 was found. These data are compatible with a titanium diffusion from the bulk towards the implanted oxygen.

Characterization of a silver-incorporated calcium phosphate film by RBS and its antimicrobial effects

NASA Astrophysics Data System (ADS)

Han, I.-H.; Lee, I.-S.; Song, J.-H.; Lee, M.-H.; Park, J.-C.; Lee, G.-H.; Sun, X.-D.; Chung, S.-M.

2007-09-01

A thin calcium phosphate film was synthesized on both commercially pure Ti and Si wafers by electron beam evaporation of hydroxyapatite as an evaporant with simultaneous Ar ion beam bombardments. Silver was introduced into an ion-beam-assisted deposition of a calcium phosphate thin film for antimicrobial effect. The amount of incorporated silver ions was controlled by immersing calcium-phosphate-coated samples in different AgNO3 concentrations, and Rutherford backscattering spectrometry (RBS) was employed to measure the amounts of substituted silver. The higher concentration of silver in the calcium phosphate film was more effective in reducing the bacteria of Escherichia coli ATCC 8739 and Streptococcus mutans OMZ 65 on contact with respect to controls.

Surface analysis of space telescope material specimens

NASA Technical Reports Server (NTRS)

Fromhold, A. T.; Daneshvar, K.

1985-01-01

Qualitative and quantitative data on Space Telescope materials which were exposed to low Earth orbital atomic oxygen in a controlled experiment during the 41-G (STS-17) mission were obtained utilizing the experimental techniques of Rutherford backscattering (RBS), particle induced X-ray emission (PIXE), and ellipsometry (ELL). The techniques employed were chosen with a view towards appropriateness for the sample in question, after consultation with NASA scientific personnel who provided the material specimens. A group of eight samples and their controls selected by NASA scientists were measured before and after flight. Information reported herein include specimen surface characterization by ellipsometry techniques, a determination of the thickness of the evaporated metal specimens by RBS, and a determination of trace impurity species present on and within the surface by PIXE.

Characterization of a silver-incorporated calcium phosphate film by RBS and its antimicrobial effects.

PubMed

Han, I-H; Lee, I-S; Song, J-H; Lee, M-H; Park, J-C; Lee, G-H; Sun, X-D; Chung, S-M

2007-09-01

A thin calcium phosphate film was synthesized on both commercially pure Ti and Si wafers by electron beam evaporation of hydroxyapatite as an evaporant with simultaneous Ar ion beam bombardments. Silver was introduced into an ion-beam-assisted deposition of a calcium phosphate thin film for antimicrobial effect. The amount of incorporated silver ions was controlled by immersing calcium-phosphate-coated samples in different AgNO(3) concentrations, and Rutherford backscattering spectrometry (RBS) was employed to measure the amounts of substituted silver. The higher concentration of silver in the calcium phosphate film was more effective in reducing the bacteria of Escherichia coli ATCC 8739 and Streptococcus mutans OMZ 65 on contact with respect to controls.

Silicon thin film homoepitaxy by rapid thermal atmospheric-pressure chemical vapor deposition (RT-APCVD)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Monna, R.; Angermeier, D.; Slaoui, A.

1996-12-01

The homoepitaxy of thin film silicon layers in a horizontal, atmospheric pressure RTCVD reactor is reported. The experiments were conducted in a temperature range from 900 C to 1,300 C employing the precursor trichlorosilane (TCS) and the dopant trichloroborine (TCB) diluted in hydrogen. The epilayers were evaluated by Nomarski microscopy, Rutherford backscattering spectroscopy, and scanning electron microscopy (SEM). The electrical properties of the thin film were analyzed by sheet resistance and four point probe characterization methods. The authors propose that the responsible mechanisms for the observed growth decline at higher precursor concentration in hydrogen are due to the reaction ofmore » the gaseous HCl with the silicon surface and the supersaturation of silicon.« less

In-air RBS measurements at the LAMFI external beam setup

DOE Office of Scientific and Technical Information (OSTI.GOV)

Silva, T. F.; Added, N.; Moro, M. V.

2014-11-11

This work describes new developments in the external beam setup of the Laboratory of Material Analysis with Ion Beams of the University of São Paulo (LAMFI-USP). This setup was designed to be a versatile analytical station to analyze a broad range of samples. In recent developments, we seek the external beam Rutherford Backscattering Spectroscopy (RBS) analysis to complement the Particle Induced X-ray Emission (PIXE) measurements. This work presents the initial results of the external beam RBS analysis as well as recent developments to improve the energy resolution RBS measurements, in particular tests to seek for sources of resolution degradation. Thesemore » aspects are discussed and preliminary results of in-air RBS analysis of some test samples are presented.« less

Cluster Tool for In Situ Processing and Comprehensive Characterization of Thin Films at High Temperatures.

PubMed

Wenisch, Robert; Lungwitz, Frank; Hanf, Daniel; Heller, René; Zscharschuch, Jens; Hübner, René; von Borany, Johannes; Abrasonis, Gintautas; Gemming, Sibylle; Escobar-Galindo, Ramon; Krause, Matthias

2018-06-13

A new cluster tool for in situ real-time processing and depth-resolved compositional, structural and optical characterization of thin films at temperatures from -100 to 800 °C is described. The implemented techniques comprise magnetron sputtering, ion irradiation, Rutherford backscattering spectrometry, Raman spectroscopy, and spectroscopic ellipsometry. The capability of the cluster tool is demonstrated for a layer stack MgO/amorphous Si (∼60 nm)/Ag (∼30 nm), deposited at room temperature and crystallized with partial layer exchange by heating up to 650 °C. Its initial and final composition, stacking order, and structure were monitored in situ in real time and a reaction progress was defined as a function of time and temperature.

Diffraction Pattern Analysis as an Optical Inspection Technique

DTIC Science & Technology

1991-08-01

BACKGROUND Diameters of fiber samples have commonly been measured manually with an optical microscope. Marcuse and Presby developed an automatic...by analyzing the back-scattered light when a beam of laser light impinged upon the fiber [2]. Presby and Marcuse extended this back-scattering tech...be im- proved further in order to become a feasible method for detecting a small number of blocked openings in CRT screens. 20 REFERENCES 1. Marcuse

Comparison of high intensity focused ultrasound (HIFU) exposures using empirical and backscatter attenuation estimation methods

NASA Astrophysics Data System (ADS)

Civale, John; Ter Haar, Gail; Rivens, Ian; Bamber, Jeff

2005-09-01

Currently, the intensity to be used in our clinical HIFU treatments is calculated from the acoustic path lengths in different tissues measured on diagnostic ultrasound images of the patient in the treatment position, and published values of ultrasound attenuation coefficients. This yields an approximate value for the acoustic power at the transducer required to give a stipulated focal intensity in situ. Estimation methods for the actual acoustic attenuation have been investigated in large parts of the tissue path overlying the target volume from the backscattered ultrasound signal for each patient (backscatter attenuation estimation: BAE). Several methods have been investigated. The backscattered echo information acquired from an Acuson scanner has been used to compute the diffraction-corrected attenuation coefficient at each frequency using two methods: a substitution method and an inverse diffraction filtering process. A homogeneous sponge phantom was used to validate the techniques. The use of BAE to determine the correct HIFU exposure parameters for lesioning has been tested in ex vivo liver. HIFU lesions created with a 1.7-MHz therapy transducer have been studied using a semiautomated image processing technique. The reproducibility of lesion size for given in situ intensities determined using BAE and empirical techniques has been compared.

Characterization of ultrafine grained Cu-Ni-Si alloys by electron backscatter diffraction

NASA Astrophysics Data System (ADS)

Altenberger, I.; Kuhn, H. A.; Gholami, M.; Mhaede, M.; Wagner, L.

2014-08-01

A combination of rotary swaging and optimized precipitation hardening was applied to generate ultra fine grained (UFG) microstructures in low alloyed high performance Cu-based alloy CuNi3Si1Mg. As a result, ultrafine grained (UFG) microstructures with nanoscopically small Ni2Si-precipitates exhibiting high strength, ductility and electrical conductivity can be obtained. Grain boundary pinning by nano-precipitates enhances the thermal stability. Electron channeling contrast imaging (ECCI) and especially electron backscattering diffraction (EBSD) are predestined to characterize the evolving microstructures due to excellent resolution and vast crystallographic information. The following study summarizes the microstructure after different processing steps and points out the consequences for the most important mechanical and physical properties such as strength, ductility and conductivity.

Backscatter analysis of dihedral corner reflectors using physical optics and the physical theory of diffraction

NASA Technical Reports Server (NTRS)

Griesser, Timothy; Balanis, Constantine A.

1987-01-01

The backscatter cross-sections of dihedral corner reflectors in the azimuthal plane are presently determined by both physical optics (PO) and the physical theory of diffraction (PTD), yielding results for the vertical and horizontal polarizations. In the first analysis method used, geometrical optics is used in place of PO at initial reflections in order to maintain the planar character of the reflected wave and reduce the complexity of the analysis. In the second method, PO is used at almost every reflection in order to maximize the accuracy of the PTD solution at the expense of a rapid increase in complexity. Induced surface current densities and resulting cross section patterns are illustrated for the two methods.

Backscattered Diffraction | Materials Science | NREL

Science.gov Websites

crystalline orientation (left) and grain distribution (right). EBSD images showing properties of crystalline investigate misorientation between grain boundaries, texture, grain distribution, deformation, strain, and

Characterisation of nickel silicide thin films by spectroscopy and microscopy techniques.

PubMed

Bhaskaran, M; Sriram, S; Holland, A S; Evans, P J

2009-01-01

This article discusses the formation and detailed materials characterisation of nickel silicide thin films. Nickel silicide thin films have been formed by thermally reacting electron beam evaporated thin films of nickel with silicon. The nickel silicide thin films have been analysed using Auger electron spectroscopy (AES) depth profiles, secondary ion mass spectrometry (SIMS), and Rutherford backscattering spectroscopy (RBS). The AES depth profile shows a uniform NiSi film, with a composition of 49-50% nickel and 51-50% silicon. No oxygen contamination either on the surface or at the silicide-silicon interface was observed. The SIMS depth profile confirms the existence of a uniform film, with no traces of oxygen contamination. RBS results indicate a nickel silicide layer of 114 nm, with the simulated spectra in close agreement with the experimental data. Atomic force microscopy and transmission electron microscopy have been used to study the morphology of the nickel silicide thin films. The average grain size and average surface roughness of these films was found to be 30-50 and 0.67 nm, respectively. The film surface has also been studied using Kikuchi patterns obtained by electron backscatter detection.

Influence of orbital symmetry on diffraction imaging with rescattering electron wave packets

DOE PAGES

Pullen, M. G.; Wolter, B.; Le, A. -T.; ...

2016-06-22

The ability to directly follow and time-resolve the rearrangement of the nuclei within molecules is a frontier of science that requires atomic spatial and few-femtosecond temporal resolutions. While laser-induced electron diffraction can meet these requirements, it was recently concluded that molecules with particular orbital symmetries (such as pg) cannot be imaged using purely backscattering electron wave packets without molecular alignment. Here, we demonstrate, in direct contradiction to these findings, that the orientation and shape of molecular orbitals presents no impediment for retrieving molecular structure with adequate sampling of the momentum transfer space. We overcome previous issues by showcasing retrieval ofmore » the structure of randomly oriented O 2 and C 2H 2 molecules, with π g and π u symmetries, respectively, and where their ionization probabilities do not maximize along their molecular axes. As a result, while this removes a serious bottleneck for laser-induced diffraction imaging, we find unexpectedly strong backscattering contributions from low-Z atoms.« less

In situ measurement of the rheological properties and agglomeration on cementitious pastes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Jae Hong; Yim, Hong Jae, E-mail: yimhj@knu.ac.kr; Ferron, Raissa Douglas

2016-07-15

Various factors influence the rheology of cementitious pastes, with the most important being the mixing protocol, mixture proportions, and mixture composition. This study investigated the influence of ground-granulated blast-furnace slag, on the rheological behavior of cementitious pastes. In tandem with the rheological measurements, fresh state microstructural measurements were conducted using three different techniques: A coupled stroboscope-rheometer, a coupled laser backscattering-rheometer, and a conventional laser diffraction technique. Laser diffraction and the coupled stroboscope-rheometer were not good measures of the in situ state of flocculation of a sample. Rather, only the laser backscattering technique allowed for in situ measurement on a highlymore » concentrated suspension (cementitious paste). Using the coupled laser backscattering-rheometer technique, a link between the particle system and rheological behavior was determined through a modeling approach that takes into account agglomeration properties. A higher degree of agglomeration was seen in the ordinary Portland cement paste than pastes containing the slag and this was related to the degree of capillary pressure in the paste systems.« less

Effect of concentration and irradiation on the optical and structural properties of ZnO thin films deposited by spray pyrolysis techniques

NASA Astrophysics Data System (ADS)

Adeoye Victor, Babalola

2017-12-01

This study involves the preparation of ZnO thin films by spray pyrolysis and to investigate the effect of concentration of the film and irradiation on ZnO thin film deposited by spray pyrolysis method deposited at 350 ± 5 °C. The precursor for zinc oxide was produced from zinc acetate (Zn(CH3COO))2. The samples were annealed at 500 °C for 6 h and irradiated using 137Cs 90.998 mCi radiation. They were then characterised using ultra violet-visible spectrophotometry, X-ray Diffractometry (XRD) with Cu-Kα radiation to determine the structure of the film, Four-point probe for electrical properties and Rutherford Backscattering Spectrometry (RBS) were used for the composition of the film. XRD diffraction peaks observed for 0.05 M ZnO were (1 0 0), (0 0 2), (1 0 1) and (1 1 0) planes for the annealed and irradiated annealed ZnO films with no preferential orientation. The as-deposited films have low peaks belonging to (1 0 0), (0 0 2), (1 0 1), (1 1 0) plane and other peaks such as (1 1 2), (2 0 0) and (2 0 1). The results are explained with regard to the irradiation damage introduced to the samples. The as-deposited, annealed and irradiated-annealed films are highly transparent in the visible range of the electromagnetic spectrum with an average percent transmittance values of 85% and present a sharp ultraviolet cut-off at approximately 380 nm for the ZnO thin film.

Effect of Thickness on the Structural, Microstructural, Electrical and Magnetic Properties of ni Films Elaborated by Pulsed Electrodeposition on si Substrate

NASA Astrophysics Data System (ADS)

Kacel, T.; Guittoum, A.; Hemmous, M.; Dirican, E.; Öksüzoglu, R. M.; Azizi, A.; Laggoun, A.; Zergoug, M.

We have studied the effect of thickness on the structural, microstructural, electrical and magnetic properties of Ni films electrodeposited onto n-Si (100) substrates. A series of Ni films have been prepared for different potentials ranging from -1.6V to -2.6V. Rutherford backscattering spectrometry (RBS), X-ray diffraction (XRD), four point probe technique, atomic force microscopy (AFM) and vibrating sample magnetometry (VSM) have been used to investigate the physical properties of elaborated Ni thin films. From the analysis of RBS spectra, we have extracted the films thickness t (t ranges from 83nm to 422nm). We found that the Ni thickness, t (nm), linearly increases with the applied potential. The Ni thin films are polycrystalline and grow with the 〈111〉 texture. The lattice parameter a (Å) monotonously decreases with increasing thickness. However, a positive strain was noted indicating that all the samples are subjected to a tensile stress. The mean grain sizes D (nm) and the strain ɛhkl decrease with increasing thickness. The electrical resistivity ρ (μΩ.cm) increases with t for t less than 328nm. The diffusion at the grain boundaries may be the important factor in the electrical resistivity. From AFM images, we have shown that the Ni surface roughness decreases with increasing thickness. The coercive field HC, the squareness factor S, the saturation field HS and the effective anisotropy constant K1eff are investigated as a function of Ni thickness and grain sizes. The correlation between the magnetic and the structural properties is discussed.

Low-cost synthesis of pure ZnO nanowalls showing three-fold symmetry

NASA Astrophysics Data System (ADS)

Scuderi, Mario; Strano, Vincenzina; Spinella, Corrado; Nicotra, Giuseppe; Mirabella, Salvo

2018-04-01

ZnO nanowalls (NWLs) represent a non-toxic, Earth abundant, high surface-to-volume ratio, semiconducting nanostructure which has already showed potential applications in biosensing, environmental monitoring and energy. Low-cost synthesis of these nanostructures is extremely appealing for large scale upgrading of laboratory results, and its implementation has to be tested at the nanoscale, at least in terms of chemical purity and crystallographic orientation. Here, we have produced pure and texturized ZnO NWLs by using chemical bath deposition (CBD) synthesis followed by a thermal treatment at 300 °C. We examined the NWL formation process and the new obtained structure at the nanoscale, by means of scanning and transmission electron microscopy in combination with x-ray diffraction and Rutherford backscattering spectrometry. We have shown that only after annealing at 300 °C in nitrogen does the as-grown material, composed of a mixture of Zn compounds NWLs, show its peculiar crystal arrangement. The resulting ZnO sheets are in fact made by ZnO wurtzite domains (4-5 nm) that show a particular kind of texturization; indeed, they are aligned with their own c-axis always perpendicular to the sheets forming the wall and rotated (around the c-axis) by multiples of 20° from each other. The presented data show that low-cost CBD, followed by an annealing process, gives pure ZnO with a peculiarly ordered nanostructure that shows three-fold symmetry. Such evidence at the nanoscale will have significant implications for realizing sensing or catalyst devices based on ZnO NWLs.

New large volume hydrothermal reaction cell for studying chemical processes under supercritical hydrothermal conditions using time-resolved in situ neutron diffraction.

PubMed

Ok, Kang Min; O'Hare, Dermot; Smith, Ronald I; Chowdhury, Mohammed; Fikremariam, Hanna

2010-12-01

The design and testing of a new large volume Inconel pressure cell for the in situ study of supercritical hydrothermal syntheses using time-resolved neutron diffraction is introduced for the first time. The commissioning of this new cell is demonstrated by the measurement of the time-of-flight neutron diffraction pattern for TiO(2) (Anatase) in supercritical D(2)O on the POLARIS diffractometer at the United Kingdom's pulsed spallation neutron source, ISIS, Rutherford Appleton Laboratory. The sample can be studied over a wide range of temperatures (25-450 °C) and pressures (1-355 bar). This novel apparatus will now enable us to study the kinetics and mechanisms of chemical syntheses under extreme environments such as supercritical water, and in particular to study the crystallization of a variety of technologically important inorganic materials.

Measuring the Shock Stage of Asteroid Regolith Grains by Electron Back-Scattered Diffraction

NASA Technical Reports Server (NTRS)

Zolensky, Michael; Martinez, James; Sitzman, Scott; Mikouchi, Takashi; Hagiya, Kenji; Ohsumi, Kazumasa; Terada, Yasuko; Yagi, Naoto; Komatsu, Mutsumi; Ozawa, Hikaru;

Identifying Planar Deformation Features Using EBSD and FIB

NASA Astrophysics Data System (ADS)

Pickersgill, A. E.; Lee, M. R.

2015-09-01

Planar deformation features in quartz grains from the Gow Lake impact structure have been successfully identified and indexed using electron backscatter diffraction in combination with focused ion beam milling.

Structures of Astromaterials Revealed by EBSD

NASA Technical Reports Server (NTRS)

Zolensky, M.

2018-01-01

Groups at the Johnson Space Center and the University of Tokyo have been using electron back-scattered diffraction (EBSD) to reveal the crystal structures of extraterrestrial minerals for many years. Even though we also routinely use transmission electron microscopy, synchrotron X-ray diffraction (SXRD), and conventional electron diffraction, we find that EBSD is the most powerful technique for crystal structure elucidation in many instances. In this talk I describe a few of the cases where we have found EBSD to provide crucial, unique information. See attachment.

Analysis of nanoparticles using photonic nanojet

NASA Astrophysics Data System (ADS)

Li, Xu; Chen, Zhigang; Siegel, Michael P.; Taflove, Allen; Backman, Vadim

2005-04-01

A photonic nanojet is a local field enhancement generated in the vicinity of a properly chosen microsphere or microcylinder illuminated by a collimated light beam. These photonic nanojets have waists smaller than the diffraction limit and propagate over several optical wavelengths without significant diffraction. We investigate the properties of photonic nanojets using rigorous solutions of Maxwell"s equations. A remarkable property we have found is that they can significantly enhance the backscattering of light by nanometer-scale particles (as small as ~1 nm) located within the jets. The enhancement factor for the backscattering intensity can be as high as five to six orders of magnitude. As a result, the observed intensity of the backscattered light from the dielectric microsphere can be substantially altered due to the presence of a nanoparticle within the light jet. Furthermore, the intensity and angular distribution of the backscattered signal is extremely sensitive to the size of the nanoparticle, which may enable differentiating particles with accuracy up to 1 nm. These properties of photonic nanojets make them an ideal tool for detecting, differentiating and sorting nanoparticles, which is of immense necessity for the field of nano-biotechnology. For example, they could yield potential novel ultramicroscopy techniques using visible light for detecting proteins, viral particles, and even single molecules; and monitoring molecular synthesis and aggregation processes of importance in many areas of biology, chemistry, material sciences, and tissue engineering.

Cd ion implantation in AlN

NASA Astrophysics Data System (ADS)

Miranda, S. M. C.; Franco, N.; Alves, E.; Lorenz, K.

2012-10-01

AlN thin films were implanted with cadmium, to fluences of 1 × 1013 and 8 × 1014 at/cm2. The implanted samples were annealed at 950 °C under flowing nitrogen. Although implantation damage in AlN is known to be extremely stable the crystal could be fully recovered at low fluences. At high fluences the implantation damage was only partially removed. Implantation defects cause an expansion of the c-lattice parameter. For the high fluence sample the lattice site location of the ions was studied by Rutherford Backscattering/Channelling Spectrometry. Cd ions are found to be incorporated in substitutional Al sites in the crystal and no significant diffusion is seen upon thermal annealing. The observed high solubility limit and site stability are prerequisite for using Cd as p-type dopant in AlN.

Complementary study of the internal porous silicon layers formed under high-dose implantation of helium ions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lomov, A. A., E-mail: lomov@ftian.ru; Myakon’kikh, A. V.; Chesnokov, Yu. M.

The surface layers of Si(001) substrates subjected to plasma-immersion implantation of helium ions with an energy of 2–5 keV and a dose of 5 × 10{sup 17} cm{sup –2} have been investigated using high-resolution X-ray reflectivity, Rutherford backscattering, and transmission electron microscopy. The electron density depth profile in the surface layer formed by helium ions is obtained, and its elemental and phase compositions are determined. This layer is found to have a complex structure and consist of an upper amorphous sublayer and a layer with a porosity of 30–35% beneath. It is shown that the porous layer has the sharpestmore » boundaries at a lower energy of implantable ions.« less

Characterization of Noble Gas Ion Beam Fabricated Single Molecule Nanopore Detectors

NASA Astrophysics Data System (ADS)

Rollings, Ryan; Ledden, Bradley; Shultz, John; Fologea, Daniel; Li, Jiali; Chervinsky, John; Golovchenko, Jene

2006-03-01

Nanopores fabricated with low energy noble gas ion beams in a silicon nitride membrane can be employed as the fundamental element of single biomolecule detection and characterization devices [1,2]. With the help of X-ray Photoelectron Spectroscopy (XPS) and Rutherford Backscattering (RBS), we demonstrate that the electrical noise properties, and hence ultimate sensitivity of nanopore single molecule detectors depends on ion beam species and nanopore annealing conditions. .1. Li, J., D. Stein, C. McMullan, D. Branton, M.J. Aziz, and J.A. Golovchenko, Ion-beam sculpting at nanometre length scales. Nature, 2001. 412(12 July): p. 166-169. 2. Li, J., M. Gershow, D. Stein, E. Brandin, and J.A. Golovchenko, DNA Molecules and Configurations in a Solid-state Nanopore Microscope. Nature Materials, 2003. 2: p. 611-615.

Rapid annealing of iron implanted Hg(1-x)Cd(x)Te

NASA Astrophysics Data System (ADS)

Kalish, Rafael

1990-03-01

Different Rapid Thermal Annealing techniques were employed to achieve damage removal and electrical activation of dopants in ion implanted Hg(1-x)Cd(x)Te (x = 0.2, 0.3). As seen by Rutherford Backscattering Spectrometry combined with channeling and Auger measurements annealings with a CO2 laser or a flash lamp lead to good removal of implantation damage without causing changes in the stoichiometry. These techniques, however, suffer from complexity and lack of reproducibility. The new simple method for RTA of mercury containing crystals Annealing by immersion in a how MErcury BAth (AMEBA) which was developed within the present project was found to be comparable to other more complicate techniques as for improving the electrical properties of HgCdTe as deduced from Hall and differential Hall measurements.

Changes in local surface structure and Sr depletion in Fe-implanted SrTiO3 (001)

NASA Astrophysics Data System (ADS)

Lobacheva, O.; Yiu, Y. M.; Chen, N.; Sham, T. K.; Goncharova, L. V.

2017-01-01

Local surface structure of single crystal strontium titanate SrTiO3 (001) samples implanted with Fe in the range of concentrations between 2 × 1014 to 2 × 1016 Fe/cm2 at 30 keV has been investigated. In order to facilitate Fe substitution (doping), implanted samples were annealed in oxygen at 350 °C. Sr depletion was observed from the near-surface layers impacted by the ion-implantation process, as revealed by Rutherford Backscattering Spectrometry (RBS), X-ray photoelectron spectroscopy (XPS), X-ray Absorption Near Edge Spectroscopy (XANES), and Atomic Force Microscopy (AFM). Hydrocarbon contaminations on the surface may contribute to the mechanisms of Sr depletion, which have important implications for Sr(Ti1-xFex)O3-δ materials in gas sensing applications.

Micro-PIXE and micro-RBS characterization of micropores in porous silicon prepared using microwave-assisted hydrofluoric acid etching.

PubMed

Ahmad, Muthanna; Grime, Geoffrey W

2013-04-01

Porous silicon (PS) has been prepared using a microwave-assisted hydrofluoric acid (HF) etching method from a silicon wafer pre-implanted with 5 MeV Cu ions. The use of microbeam proton-induced X-ray emission (micro-PIXE) and microbeam Rutherford backscattering techniques reveals for the first time the capability of these techniques for studying the formation of micropores. The porous structures observed from micro-PIXE imaging results are compared to scanning electron microscope images. It was observed that the implanted copper accumulates in the same location as the pores and that at high implanted dose the pores form large-scale patterns of lines and concentric circles. This is the first work demonstrating the use of microwave-assisted HF etching in the formation of PS.

RBS and PIXE analysis of chlorine contamination in ALD-Grown TiN films on silicon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Meersschaut, J.; Witters, T.; Kaeyhkoe, M.

2013-04-19

The performance, strengths and limitations of RBS and PIXE for the characterization of trace amounts of Cl in TiN thin films are critically compared. The chlorine atomic concentration in ALD grown TiN thin films on Si is determined for samples grown at temperatures ranging from 350 Degree-Sign C to 550 Degree-Sign C. We show that routine Rutherford backscattering spectrometry measurements (1.5 MeV He{sup +}) and PIXE measurements (1.5 MeV H{sup +}) on 20 nm thick TiN films allow one to determine the Cl content down to 0.3 at% with an absolute statistical accuracy reaching 0.03 at%. Possible improvements to pushmore » the sensitivity limit for both approaches are proposed.« less

Monitoring Ion Track Formation Using In Situ RBS/c, ToF-ERDA, and HR-PIXE

NASA Astrophysics Data System (ADS)

Karlušić, Marko; Fazinić, Stjepko; Siketić, Zdravko; Tadić, Tonči; Cosic, Donny; Božičević-Mihalić, Iva; Zamboni, Ivana; Jakšić, Milko; Schleberger, Marika

2017-09-01

The aim of this work is to investigate feasibility of the ion beam analysis techniques for monitoring swift heavy ion track formation. First, use of the in situ Rutherford backscattering spectroscopy in channeling mode to observe damage build-up in quartz SiO2 after MeV heavy ion irradiation is demonstrated. Second, new results of the in situ grazing incidence time-of-flight elastic recoil detection analysis used for monitoring the surface elemental composition during ion tracks formation in various materials are presented. Ion tracks were found on SrTiO3, quartz SiO2, a-SiO2 and muscovite mica surfaces by atomic force microscopy, but in contrast to our previous studies on GaN and TiO2, surface stoichiometry remained unchanged.

Incorporation of hydrogen in CuInSe{sub 2}: Improvements of the structure

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yakushev, M. V.; Ogorodnikov, I. I.; Volkov, V. A.

2011-09-15

CuInSe{sub 2} single crystals were ion implanted with a dose of 3 x 10{sup 16} cm{sup -2} by 2.5 keV H{sup +} at 150 and 250 deg. C Before and after the implantation the crystals were analyzed by Rutherford backscattering/channeling (RBS/C) along the <112> axis using 2 MeV He{sup +}. The RBS/C spectra indicate that the implantation at 150 deg. C introduces a layer of radiation damage, whereas after the implantation at 250 deg. C no structural deterioration of the lattice can be seen. Quite the contrary, the RBS/C spectra reveal a considerable decrease in the dechanneling parameters suggesting improvementsmore » in the lattice structural quality attributed to the incorporation of hydrogen.« less

Surface damage on polycrystalline β-SiC by xenon ion irradiation at high fluence

NASA Astrophysics Data System (ADS)

Baillet, J.; Gavarini, S.; Millard-Pinard, N.; Garnier, V.; Peaucelle, C.; Jaurand, X.; Duranti, A.; Bernard, C.; Rapegno, R.; Cardinal, S.; Escobar Sawa, L.; De Echave, T.; Lanfant, B.; Leconte, Y.

2018-05-01

Polycrystalline β-silicon carbide (β-SiC) pellets were prepared by Spark Plasma Sintering (SPS). These were implanted at room temperature with 800 keV xenon at ion fluences of 5.1015 and 1.1017 cm-2. Microstructural modifications were studied by electronic microscopy (TEM and SEM) and xenon profiles were determined by Rutherford Backscattering Spectroscopy (RBS). A complete amorphization of the implanted area associated with a significant oxidation is observed for the highest fluence. Large xenon bubbles formed in the oxide phase are responsible of surface swelling. No significant gas release has been measured up to 1017 at.cm-2. A model is proposed to explain the different steps of the oxidation process and xenon bubbles formation as a function of ion fluence.

Structural modification of poly(methyl methacrylate) by proton irradiation

NASA Astrophysics Data System (ADS)

Choi, H. W.; Woo, H. J.; Hong, W.; Kim, J. K.; Lee, S. K.; Eum, C. H.

2001-01-01

A general survey is presented on the structural modification of poly(methyl methacrylate) (PMMA) by proton implantation. The implanted PMMA films were characterized by FT-IR attenuated total reflection (FT-IR ATR), Raman, Rutherford backscattering spectroscopy (RBS), gel permeation chromatography (GPC) and surface profiling. The ion fluence of 350 keV protons ranged from 2×10 14 to 1×10 15 ions/cm 2. The IR and Raman spectra showed the reduction of peaks from the pendant group of PMMA. The change of absorption and composition was observed by UV-VIS and RBS, respectively. These results showed that the pendant group is readily decomposed and eliminated by proton irradiation. The change of molecular weight distribution was also measured by GPC and G-value of scission was estimated to be 0.67.

Preparation of Y-Ba-Cu oxide superconductor thin films using pulsed laser evaporation from high T/sub c/ bulk material

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dijkkamp, D.; Venkatesan, T.; Wu, X.D.

We report the first successful preparation of thin films of Y-Ba-Cu-O superconductors using pulsed excimer laser evaporation of a single bulk material target in vacuum. Rutherford backscattering spectrometry showed the composition of these films to be close to that of the bulk material. Growth rates were typically 0.1 nm per laser shot. After an annealing treatment in oxygen the films exhibited superconductivity with an onset at 95 K and zero resistance at 85 and 75 K on SrTiO/sub 3/ and Al/sub 2/O/sub 3/ substrates, respectively. This new deposition method is relatively simple, very versatile, and does not require the usemore » of ultrahigh vacuum techniques.« less

Bi flux-dependent MBE growth of GaSbBi alloys

DOE PAGES

Rajpalke, M. K.; Linhart, W. M.; Yu, K. M.; ...

2015-03-05

The incorporation of Bi in GaSb 1-xBi x alloys grown by molecular beam epitaxy is investigated as a function of Bi flux at fixed growth temperature (275 °C) and growth rate (1 μm h⁻¹). The Bi content is found to vary proportionally with Bi flux with Bi contents, as measured by Rutherford backscattering, in the range 0 < x ≤ 4.5%. The GaSbBi samples grown at the lowest Bi fluxes have smooth surfaces free of metallic droplets. The higher Bi flux samples have surface Bi droplets. The room temperature band gap of the GaSbBi epitaxial layers determined from optical absorptionmore » decreases linearly with increasing Bi content with a reduction of ~32 meV/%Bi.« less

Electrical-pulse-induced resistivity modulation in Pt/TiO2-δ/Pt multilayer device related to nanoionics-based neuromorphic function

NASA Astrophysics Data System (ADS)

Kawamura, Kinya; Tsuchiya, Takashi; Takayanagi, Makoto; Terabe, Kazuya; Higuchi, Tohru

2017-06-01

Resistivity modulation behavior in Pt/TiO2-δ/Pt multilayer devices was investigated in terms of nanoionics-based neuromorphic function. The current relaxation behavior, which corresponds to short-term and long-term memorization in neuromorphic function, was analyzed using electrical pulses. In contrast to the huge difference in ionic conductivity for bulk crystal materials of TiO2-δ and WO3, the difference in the relaxation behavior was small. Rutherford backscattering spectrometry and hydrogen forward scattering spectrometry revealed that the TiO2-δ thin film contained 5.6 at. % of protons. This indicates that the neuromorphic function in TiO2-δ-based devices is caused by extrinsic proton transport, presumably through the grain boundary.

Amorphous metallizations for high-temperature semiconductor device applications

NASA Technical Reports Server (NTRS)

Wiley, J. D.; Perepezko, J. H.; Nordman, J. E.; Kang-Jin, G.

1981-01-01

The initial results of work on a class of semiconductor metallizations which appear to hold promise as primary metallizations and diffusion barriers for high temperature device applications are presented. These metallizations consist of sputter-deposited films of high T sub g amorphous-metal alloys which (primarily because of the absence of grain boundaries) exhibit exceptionally good corrosion-resistance and low diffusion coefficients. Amorphous films of the alloys Ni-Nb, Ni-Mo, W-Si, and Mo-Si were deposited on Si, GaAs, GaP, and various insulating substrates. The films adhere extremely well to the substrates and remain amorphous during thermal cycling to at least 500 C. Rutherford backscattering and Auger electron spectroscopy measurements indicate atomic diffussivities in the 10 to the -19th power sq cm/S range at 450 C.

Analysis of Picosecond Pulsed Laser Melted Graphite

DOE R&D Accomplishments Database

Steinbeck, J.; Braunstein, G.; Speck, J.; Dresselhaus, M. S.; Huang, C. Y.; Malvezzi, A. M.; Bloembergen, N.

1986-12-01

A Raman microprobe and high resolution TEM have been used to analyze the resolidified region of liquid carbon generated by picosecond pulse laser radiation. From the relative intensities of the zone center Raman-allowed mode for graphite at 1582 cm{sup -1} and the disorder-induced mode at 1360 cm{sup -1}, the average graphite crystallite size in the resolidified region is determined as a function of position. By comparison with Rutherford backscattering spectra and Raman spectra from nanosecond pulsed laser melting experiments, the disorder depth for picosecond pulsed laser melted graphite is determined as a function of irradiating energy density. Comparisons of TEM micrographs for nanosecond and picosecond pulsed laser melting experiments show that the structure of the laser disordered regions in graphite are similar and exhibit similar behavior with increasing laser pulse fluence.

Characterization of conductive Al-doped ZnO thin films for plasmonic applications

NASA Astrophysics Data System (ADS)

Masouleh, F. F.; Sinno, I.; Buckley, R. G.; Gouws, G.; Moore, C. P.

2018-02-01

Highly conductive and transparent Al-doped zinc oxide films were produced by RF magnetron sputtering for plasmonic applications in the infrared region of the spectrum. These films were characterized using Fourier transform infrared spectroscopy, the Hall effect, Rutherford backscattering spectroscopy and spectral data analysis. Analysis of the results shows a carrier concentration of up to 2.6 × 1020 cm-3, as well as transmission over 80% near the plasma frequency where plasmonic properties are expected. The plasma frequency was calculated from the spectroscopy measurements and subsequent data analysis, and was in agreement with the results from the Hall effect measurements and the free electron gas (Drude) model. Based on these results, the Al-doped zinc oxide thin films are well-suited for plasmonic applications in the infrared region.

Preparation and characterization of 33S samples for 33S(n, α)30Si cross-section measurements at the n_TOF facility at CERN

NASA Astrophysics Data System (ADS)

Praena, J.; Ferrer, F. J.; Vollenberg, W.; Sabaté-Gilarte, M.; Fernández, B.; García-López, J.; Porras, I.; Quesada, J. M.; Altstadt, S.; Andrzejewski, J.; Audouin, L.; Bécares, V.; Barbagallo, M.; Bečvář, F.; Belloni, F.; Berthoumieux, E.; Billowes, J.; Boccone, V.; Bosnar, D.; Brugger, M.; Calviño, F.; Calviani, M.; Cano-Ott, D.; Carrapiço, C.; Cerutti, F.; Chiaveri, E.; Chin, M.; Colonna, N.; Cortés, G.; Cortés-Giraldo, M. A.; Diakaki, M.; Dietz, M.; Domingo-Pardo, C.; Dressler, R.; Durán, I.; Eleftheriadis, C.; Ferrari, A.; Fraval, K.; Furman, V.; Göbel, K.; Gómez-Hornillos, M. B.; Ganesan, S.; García, A. R.; Giubrone, G.; Gonçalves, I. F.; González-Romero, E.; Goverdovski, A.; Griesmayer, E.; Guerrero, C.; Gunsing, F.; Heftrich, T.; Hernández-Prieto, A.; Heyse, J.; Jenkins, D. G.; Jericha, E.; Käppeler, F.; Kadi, Y.; Karadimos, D.; Katabuchi, T.; Ketlerov, V.; Khryachkov, V.; Kivel, N.; Koehler, P.; Kokkoris, M.; Kroll, J.; Krtička, M.; Lampoudis, C.; Langer, C.; Leal-Cidoncha, E.; Lederer, C.; Leeb, H.; Leong, L. S.; Lerendegui-Marco, J.; Losito, R.; Mallick, A.; Manousos, A.; Marganiec, J.; Martínez, T.; Massimi, C.; Mastinu, P.; Mastromarco, M.; Mendoza, E.; Mengoni, A.; Milazzo, P. M.; Mingrone, F.; Mirea, M.; Mondelaers, W.; Paradela, C.; Pavlik, A.; Perkowski, J.; Plompen, A. J. M.; Rauscher, T.; Reifarth, R.; Riego-Perez, A.; Robles, M.; Rubbia, C.; Ryan, J. A.; Sarmento, R.; Saxena, A.; Schillebeeckx, P.; Schmidt, S.; Schumann, D.; Sedyshev, P.; Tagliente, G.; Tain, J. L.; Tarifeño-Saldivia, A.; Tarrío, D.; Tassan-Got, L.; Tsinganis, A.; Valenta, S.; Vannini, G.; Variale, V.; Vaz, P.; Ventura, A.; Vermeulen, M. J.; Vlachoudis, V.; Vlastou, R.; Wallner, A.; Ware, T.; Weigand, M.; Weiss, C.; Wright, T.; Žugec, P.; n TOF Collaboration

2018-05-01

Thin 33S samples for the study of the 33S(n, α)30Si cross-section at the n_TOF facility at CERN were made by thermal evaporation of 33S powder onto a dedicated substrate made of kapton covered with thin layers of copper, chromium and titanium. This method has provided for the first time bare sulfur samples a few centimeters in diameter. The samples have shown an excellent adherence with no mass loss after few years and no sublimation in vacuum at room temperature. The determination of the mass thickness of 33S has been performed by means of Rutherford backscattering spectrometry. The samples have been successfully tested under neutron irradiation.

Self-pumped Gaussian beam-coupling and stimulated backscatter due to reflection gratings in a photorefractive material

NASA Astrophysics Data System (ADS)

Saleh, Mohammad Abu

2007-05-01

When overlapping monochromatic light beams interfere in a photorefractive material, the resulting intensity fringes create a spatially modulated charge distribution. The resulting refractive index grating may cause power transfer from one beam (the pump) to the other beam (the signal). In a special case of the reflection grating geometry, the Fresnel reflection of the pump beam from the rear surface of the crystal is used as the signal beam. It has been noted that for this self-pumped, contra-directional two-beam coupling (SPCD-TBC) geometry, the coupling efficiency seems to be strongly dependent on the focal position and spot size, which is attributed to diffraction and the resulting change in the spatial overlaps between the pump and signal. In this work a full diffraction based simulation of SPCD-TBC for a Gaussian beam is developed with a novel algorithm. In a related context involving reflection gratings, a particular phenomenon named six-wave mixing has received some interest in the photorefractive research. The generation of multiple waves during near-oblique incidence of a 532 nm weakly focused laser light on photorefractive iron doped lithium niobate in a typical reflection geometry configuration is studied. It is shown that these waves are produced through two-wave coupling (self-diffraction) and four-wave mixing (parametric diffraction). One of these waves, the stimulated photorefractive backscatter produced from parametric diffraction, contains the self-phase conjugate. The dynamics of six-wave mixing, and their dependence on crystal parameters, angle of incidence, and pump power are analyzed. A novel order analysis of the interaction equations provides further insight into experimental observations in the steady state. The quality of the backscatter is evaluated through image restoration, interference experiments, and visibility measurement. Reduction of two-wave coupling may significantly improve the quality of the self-phase conjugate.

Correlation of electron backscatter diffraction and piezoresponse force microscopy for the nanoscale characterization of ferroelectric domains in polycrystalline lead zirconate titanate

NASA Astrophysics Data System (ADS)

Burnett, T. L.; Weaver, P. M.; Blackburn, J. F.; Stewart, M.; Cain, M. G.

2010-08-01

The functional properties of ferroelectric ceramic bulk or thin film materials are strongly influenced by their nanostructure, crystallographic orientation, and structural geometry. In this paper, we show how, by combining textural analysis, through electron backscattered diffraction, with piezoresponse force microscopy, quantitative measurements of the piezoelectric properties can be made at a scale of 25 nm, smaller than the domain size. The combined technique is used to obtain data on the domain-resolved effective single crystal piezoelectric response of individual crystallites in Pb(Zr0.4Ti0.6)O3 ceramics. The results offer insight into the science of domain engineering and provide a tool for the future development of new nanostructured ferroelectric materials for memory, nanoactuators, and sensors based on magnetoelectric multiferroics.

Large Area Stress Distribution in Crystalline Materials Calculated from Lattice Deformation Identified by Electron Backscatter Diffraction

NASA Astrophysics Data System (ADS)

Shao, Yongliang; Zhang, Lei; Hao, Xiaopeng; Wu, Yongzhong; Dai, Yuanbin; Tian, Yuan; Huo, Qin

2014-08-01

We report a method to obtain the stress of crystalline materials directly from lattice deformation by Hooke's law. The lattice deformation was calculated using the crystallographic orientations obtained from electron backscatter diffraction (EBSD) technology. The stress distribution over a large area was obtained efficiently and accurately using this method. Wurtzite structure gallium nitride (GaN) crystal was used as the example of a hexagonal crystal system. With this method, the stress distribution of a GaN crystal was obtained. Raman spectroscopy was used to verify the stress distribution. The cause of the stress distribution found in the GaN crystal was discussed from theoretical analysis and EBSD data. Other properties related to lattice deformation, such as piezoelectricity, can also be analyzed by this novel approach based on EBSD data.

Large area stress distribution in crystalline materials calculated from lattice deformation identified by electron backscatter diffraction.

PubMed

Shao, Yongliang; Zhang, Lei; Hao, Xiaopeng; Wu, Yongzhong; Dai, Yuanbin; Tian, Yuan; Huo, Qin

2014-08-05

We report a method to obtain the stress of crystalline materials directly from lattice deformation by Hooke's law. The lattice deformation was calculated using the crystallographic orientations obtained from electron backscatter diffraction (EBSD) technology. The stress distribution over a large area was obtained efficiently and accurately using this method. Wurtzite structure gallium nitride (GaN) crystal was used as the example of a hexagonal crystal system. With this method, the stress distribution of a GaN crystal was obtained. Raman spectroscopy was used to verify the stress distribution. The cause of the stress distribution found in the GaN crystal was discussed from theoretical analysis and EBSD data. Other properties related to lattice deformation, such as piezoelectricity, can also be analyzed by this novel approach based on EBSD data.

Large Area Stress Distribution in Crystalline Materials Calculated from Lattice Deformation Identified by Electron Backscatter Diffraction

PubMed Central

Shao, Yongliang; Zhang, Lei; Hao, Xiaopeng; Wu, Yongzhong; Dai, Yuanbin; Tian, Yuan; Huo, Qin

2014-01-01

We report a method to obtain the stress of crystalline materials directly from lattice deformation by Hooke's law. The lattice deformation was calculated using the crystallographic orientations obtained from electron backscatter diffraction (EBSD) technology. The stress distribution over a large area was obtained efficiently and accurately using this method. Wurtzite structure gallium nitride (GaN) crystal was used as the example of a hexagonal crystal system. With this method, the stress distribution of a GaN crystal was obtained. Raman spectroscopy was used to verify the stress distribution. The cause of the stress distribution found in the GaN crystal was discussed from theoretical analysis and EBSD data. Other properties related to lattice deformation, such as piezoelectricity, can also be analyzed by this novel approach based on EBSD data. PMID:25091314

An analytical model for light backscattering by coccoliths and coccospheres of Emiliania huxleyi.

PubMed

Fournier, Georges; Neukermans, Griet

2017-06-26

We present an analytical model for light backscattering by coccoliths and coccolithophores of the marine calcifying phytoplankter Emiliania huxleyi. The model is based on the separation of the effects of diffraction, refraction, and reflection on scattering, a valid assumption for particle sizes typical of coccoliths and coccolithophores. Our model results match closely with results from an exact scattering code that uses complex particle geometry and our model also mimics well abrupt transitions in scattering magnitude. Finally, we apply our model to predict changes in the spectral backscattering coefficient during an Emiliania huxleyi bloom with results that closely match in situ measurements. Because our model captures the key features that control the light backscattering process, it can be generalized to coccoliths and coccolithophores of different morphologies which can be obtained from size-calibrated electron microphotographs. Matlab codes of this model are provided as supplementary material.

Determination of migration of ion-implanted Ar and Zn in silica by backscattering spectrometry

NASA Astrophysics Data System (ADS)

Szilágyi, E.; Bányász, I.; Kótai, E.; Németh, A.; Major, C.; Fried, M.; Battistig, G.

2015-03-01

It is well known that the refractive indices of lots of materials can be modified by ion implantation, which is important for waveguide fabrication. In this work the effect of Ar and Zn ion implantation on silica layers was investigated by Rutherford Backscattering Spectrometry (RBS) and Spectroscopic Ellipsometry (SE). Silica layers produced by chemical vapour deposition technique on single crystal silicon wafers were implanted by Ar and Zn ions with a fluence of 1-2 ×1016 Ar/cm2 and 2.5 ×1016 Zn/cm2, respectively. The refractive indices of the implanted silica layers before and after annealing at 300°C and 600°C were determined by SE. The migration of the implanted element was studied by real-time RBS up to 500°C. It was found that the implanted Ar escapes from the sample at 300°C. Although the refractive indices of the Ar-implanted silica layers were increased compared to the as-grown samples, after the annealing this increase in the refractive indices vanished. In case of the Zn-implanted silica layer both the distribution of the Zn and the change in the refractive indices were found to be stable. Zn implantation seems to be an ideal choice for producing waveguides.

A comparison of the techniques of PIXE, PIGE and INAA by reference to the elemental analysis of porcine brain samples

NASA Astrophysics Data System (ADS)

Stedman, J. D.; Spyrou, N. M.

1994-12-01

The trace element concentrations in porcine brain samples as determined by particle-induced X-ray emission (PIXE) analysis, instrumental neutron activation analysis (INAA) and particle-induced gamma-ray emission (PIGE) analysis are compared. The matrix composition was determined by Rutherford backscattering (RBS). Al, Si, P, S, Cl, K, Ca, Mn, Fe and Cd were determined by PIXE analysis Na, K, Sc, Fe, Co, Zn, As, Br, Rb, and Cs by INAA and Na, Mg and Fe by PIGE analysis. The bulk elements C, N, O, Na Cl and S were found by RBS analysis. Elemental concentrations are obtained using the comparator method of analysis rather than an absolute method, the validity which is examined by comparing the elemental concentrations obtained in porcine brain using two separate certified reference materials.

RBS, TEM and SEM Characterization of Gold Nanoclusters in TiO2(110)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shutthanandan, V; Zhang, Yanwen; Wang, Chong M.

2004-05-01

Nucleation of gold nanoclusters in TiO2(110) single crystal using ion implantation and subsequent annealing were studied by Rutherford backscattering spectrometry /channeling (RBS/C), scanning electron microscopy (SEM) and transmission electron microscopy (TEM). Approximately 1000 Au2+/nm2 was implanted at room temperature in TiO2(110) substrates. TEM and SEM measurements revel that rounded nanoclusters were formed during the implantation. In contrast subsequent annealing in air for 10 hours at 1275 K promoted the formation of faceted (rectangular shaped) Au nano structures in TiO2. RBS channeling measurements further reveled that Au atoms randomly occupied in the host TiO2 lattice during the implantation. However, some ofmore » the gold atoms were moved into the Ti lattice position after annealing.« less

Sub-monolayer growth of Ag on flat and nanorippled SiO{sub 2} surfaces

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bhatnagar, Mukul; Ranjan, Mukesh; Mukherjee, Subroto

2016-05-30

In-situ Rutherford Backscattering Spectrometry (RBS) and Molecular Dynamics (MD) simulations have been used to investigate the growth dynamics of silver on a flat and the rippled silica surface. The calculated sticking coefficient of silver over a range of incidence angles shows a similar behaviour to the experimental results for an average surface binding energy of a silver adatom of 0.2 eV. This value was used to parameterise the MD model of the cumulative deposition of silver in order to understand the growth mechanisms. Both the model and the RBS results show marginal difference between the atomic concentration of silver on themore » flat and the rippled silica surface, for the same growth conditions. For oblique incidence, cluster growth occurs mainly on the leading edge of the rippled structure.« less

Growth and characterization of Pt-Si droplets for silicon nanowires synthesis

NASA Astrophysics Data System (ADS)

Khumalo, Z. M.; Topić, M.; Mtshali, C. B.; Blumenthal, M.

2018-02-01

The formation of platinum silicide phases as a function of the annealing temperature was investigated using in-situ real-time Rutherford backscattering spectrometry. The in-situ real-time RBS revealed the reaction of platinum and silicon to start at about 220 °C to form platinum silicide phases, Pt2Si and PtSi in sequence. Scanning electron microscope revealed the morphological change in the platinum layer (formation of droplets) at 800 °C. The particle induced X-ray emission analysis showed the variation of platinum intensity, in the droplets areas, between 1600 and 2000 counts. The surrounding areas are left almost uncovered due to platinum film dewetting. In-plane as well as out-of-plane silicon nanowires were observed to form at 800 °C and 1000 °C using pulsed laser ablation and thermal annealing techniques, respectively.

Gold-implanted shallow conducting layers in polymethylmethacrylate

NASA Astrophysics Data System (ADS)

Teixeira, F. S.; Salvadori, M. C.; Cattani, M.; Brown, I. G.

2009-03-01

PMMA (polymethylmethacrylate) was ion implanted with gold at very low energy and over a range of different doses using a filtered cathodic arc metal plasma system. A nanometer scale conducting layer was formed, fully buried below the polymer surface at low implantation dose, and evolving to include a gold surface layer as the dose was increased. Depth profiles of the implanted material were calculated using the Dynamic TRIM computer simulation program. The electrical conductivity of the gold-implanted PMMA was measured in situ as a function of dose. Samples formed at a number of different doses were subsequently characterized by Rutherford backscattering spectrometry, and test patterns were formed on the polymer by electron beam lithography. Lithographic patterns were imaged by atomic force microscopy and demonstrated that the contrast properties of the lithography were well maintained in the surface-modified PMMA.

Growth and characterization of molecular beam epitaxial GaAs layers on porous silicon

NASA Technical Reports Server (NTRS)

Lin, T. L.; Liu, J. K.; Sadwick, L.; Wang, K. L.; Kao, Y. C.

1987-01-01

GaAs layers have been grown on porous silicon (PS) substrates with good crystallinity by molecular beam epitaxy. In spite of the surface irregularity of PS substrates, no surface morphology deterioration was observed on epitaxial GaAs overlayers. A 10-percent Rutherford backscattering spectroscopy minimum channeling yield for GaAs-on-PS layers as compared to 16 percent for GaAs-on-Si layers grown under the same condition indicates a possible improvement of crystallinity when GaAs is grown on PS. Transmission electron microscopy reveals that the dominant defects in the GaAs-on-PS layers are microtwins and stacking faults, which originate from the GaAs/PS interface. GaAs is found to penetrate into the PS layers. n-type GaAs/p-type PS heterojunction diodes were fabricated with good rectifying characteristics.

MOCVD (Ba{sub x}Sr{sub 1-x})Ti{sub 1+y}O{sub 3+z} (BST) thin films for high frequency tunable devices.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Baumann, P. K.; Kaufman, D. Y.; Im, J.

2001-01-01

We have investigated the structural and electrical characteristics of (Ba{sub x}Sr{sub 1-x})Ti{sub 1+y}O{sub 3+z} (BST) thin films synthesized at 650{sup o}C on Pt/SiO{sub 2}/Si substrates using a large area, vertical metalorganic chemical vapor deposition (MOCVD) reactor equipped with a liquid delivery system. Films with a Ba/Sr ratio of 70/30 were studied, as determined using X-ray fluorescence spectroscopy (XRF) and Rutherford backscattering spectrometry (RBS). A substantial reduction of the dielectric loss was achieved when annealing the entire capacitor structure in air at 700{sup o}C. Dielectric tunability as high as 2.3:1 was measured for BST capacitors with the currently optimized processing conditions.

Application of Electron Backscatter Diffraction to evaluate the ASR risk of concrete aggregates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rößler, C., E-mail: christiane.roessler@uni-weimar.de; Möser, B.; Giebson, C.

Alkali-Silica Reaction (ASR) is a frequent cause of reduced concrete durability. Eliminating the application of alkali reactive aggregates would reduce the quantity of ASR concrete deterioration in the field. This study introduces an Electron Backscatter Diffraction (EBSD) technique to distinguish the ASR risk of slow-late reacting aggregates by measuring microstructural properties of quartz. Quantifying the amount of quartz grain boundaries and the associated misorientation of grains can thereby be used to differentiate microstructures bearing an ASR risk. It is also shown that dissolution of quartz in high pH environments occurs along quartz grain and subgrain boundaries. Results of EBSD analysismore » are compared with ASR performance testing on concrete prisms and optical light microscopy characterization of quartz microstructure. EBSD opens new possibilities to quantitatively characterize microstructure of quartz in concrete aggregates with respect to ASR. This leads to a better understanding on the actual cause of ASR.« less

Adaptive characterization of recrystallization kinetics in IF steel by electron backscatter diffraction.

PubMed

Kim, Dong-Kyu; Park, Won-Woong; Lee, Ho Won; Kang, Seong-Hoon; Im, Yong-Taek

2013-12-01

In this study, a rigorous methodology for quantifying recrystallization kinetics by electron backscatter diffraction is proposed in order to reduce errors associated with the operator's skill. An adaptive criterion to determine adjustable grain orientation spread depending on the recrystallization stage is proposed to better identify the recrystallized grains in the partially recrystallized microstructure. The proposed method was applied in characterizing the microstructure evolution during annealing of interstitial-free steel cold rolled to low and high true strain levels of 0.7 and 1.6, respectively. The recrystallization kinetics determined by the proposed method was found to be consistent with the standard method of Vickers microhardness. The application of the proposed method to the overall recrystallization stages showed that it can be used for the rigorous characterization of progressive microstructure evolution, especially for the severely deformed material. © 2013 The Authors Journal of Microscopy © 2013 Royal Microscopical Society.

Helium and deuterium irradiation effects in W-Ta composites produced by pulse plasma compaction

NASA Astrophysics Data System (ADS)

Dias, M.; Catarino, N.; Nunes, D.; Fortunato, E.; Nogueira, I.; Rosinki, M.; Correia, J. B.; Carvalho, P. A.; Alves, E.

2017-08-01

Tungsten-tantalum composites have been envisaged for first-wall components of nuclear fusion reactors; however, changes in their microstructure are expected from severe irradiation with helium and hydrogenic plasma species. In this study, composites were produced from ball milled W powder mixed with 10 at.% Ta fibers through consolidation by pulse plasma compaction. Implantation was carried out at room temperature with He+ (30 keV) or D+ (15 keV) or sequentially with He+ and D+ using ion beams with fluences of 5 × 1021 at/m2. Microstructural changes and deuterium retention in the implanted composites were investigated by scanning electron microscopy, coupled with focused ion beam and energy dispersive X-ray spectroscopy, transmission electron microscopy, X-ray diffraction, Rutherford backscattering spectrometry and nuclear reaction analysis. The composite materials consisted of Ta fibers dispersed in a nanostructured W matrix, with Ta2O5 layers at the interfacial regions. The Ta and Ta2O5 surfaces exhibited blisters after He+ implantation and subsequent D+ implantation worsened the blistering behavior of Ta2O5. Swelling was also pronounced in Ta2O5 where large blisters exhibited an internal nanometer-sized fuzz structure. Transmission electron microscopy revealed an extensive presence of dislocations in the metallic phases after the sequential implantation, while a relatively low density of defects was detected in Ta2O5. This behavior may be partially justified by a shielding effect from the blisters and fuzz structure developed progressively during implantation. The tungsten peaks in the X-ray diffractograms were markedly shifted after He+ implantation, and even more so after the sequential implantation, which is in agreement with the increased D retention inferred from nuclear reaction analysis.

Nanolaminated FeCoB/FeCo and FeCoB/NiFe soft magnetic thin films with tailored magnetic properties deposited by magnetron sputtering

NASA Astrophysics Data System (ADS)

Hida, Rachid; Falub, Claudiu V.; Perraudeau, Sandrine; Morin, Christine; Favier, Sylvie; Mazel, Yann; Saghi, Zineb; Michel, Jean-Philippe

2018-05-01

Thin films based on layers of Fe52Co28B20 (at%), Fe65Co35 (at%), and Ni80Fe20 (at%) were deposited by sputtering on 8″ bare Si and Si/200 nm-thermal-SiO2 wafers by simultaneous use of two or more cathodes. Due to the continuous rotation of the substrate cage, such that the substrates faced different targets alternately, the multilayers consisted of stacks of alternating, nanometer-thick regular layers. The composition of the films was determined by Rutherford Backscattering Spectrometry (RBS) and Nuclear Reactive Analysis (NRA), whereas Plasma Profiling Time of Flight Mass Spectrometry (PP-TOFMS) analysis gave depth profile information about the chemical elements. The structural and magnetic properties of the films were investigated by X-ray Diffraction and by TEM analysis, B-H loop tracer and high frequency single coil technique permeametry, respectively. The linear dependence of the coercivity of these thin films versus the grain size can be explained by the random anisotropy model. These novel, composite soft magnetic multilayers, with tunable in-plane anisotropy, allow operation at tunable frequencies, as shown by broadband (between 100 MHz and 10 GHz) RF measurements that exhibit a classical Landau-Lifschitz-Gilbert (LLG) behavior and, combine the magnetic properties of the individual materials in an advantageous way. This article presents a method to produce nanostructured soft magnetic multilayers, the properties of which can easily be tuned by choosing the ratio of the individual nanolayers. In this way it's possible to combine soft magnetic materials with complementary properties, e.g. high saturation magnetization, low coercivity, high specific resistivity and low magnetostriction

Metal-semiconductor phase transition of order arrays of VO2 nanocrystals

NASA Astrophysics Data System (ADS)

Lopez, Rene; Suh, Jae; Feldman, Leonard; Haglund, Richard

2004-03-01

The study of solid-state phase transitions at nanometer length scales provides new insights into the effects of material size on the mechanisms of structural transformations. Such research also opens the door to new applications, either because materials properties are modified as a function of particle size, or because the nanoparticles interact with a surrounding matrix material, or with each other. In this paper, we describe the formation of vanadium dioxide nanoparticles in silicon substrates by pulsed laser deposition of ion beam lithographically selected sites and thermal processing. We observe the collective behavior of 50 nm diameter VO2 oblate nanoparticles, 10 nm high, and ordered in square arrays with arbitrary lattice constant. The metal-semiconductor-transition of the VO2 precipitates shows different features in each lattice spacing substrate. The materials are characterized by electron microscopy, x-ray diffraction, Rutherford backscattering. The features of the phase transition are studied via infrared optical spectroscopy. Of particular interest are the enhanced scattering and the surface plasmon resonance when the particles reach the metallic state. This resonance amplifies the optical contrast in the range of near-infrared optical communication wavelengths and it is altered by the particle-particle coupling as in the case of noble metals. In addition the VO2 nanoparticles exhibit sharp transitions with up to 50 K of hysteresis, one of the largest values ever reported for this transition. The optical properties of the VO2 nanoarrays are correlated with the size of the precipitates and their inter-particle distance. Nonlinear and ultra fast optical measurements have shown that the transition is the fastest known solid-solid transformation. The VO2 nanoparticles show the same bulk property, transforming in times shorter than 150 fs. This makes them remarkable candidates for ultrafast optical and electronic switching applications.

Study on swift heavy ions induced modifications of Ag-ZnO nanocomposite thin film

NASA Astrophysics Data System (ADS)

Singh, S. K.; Singhal, R.; Siva Kumar, V. V.

2017-03-01

In the present work, swift heavy ion (SHI) irradiation induced modifications in structural and optical properties of Ag-ZnO nanocomposite thin films have been investigated. Ag-ZnO nanocomposite (NCs) thin films were synthesized by RF magnetron sputtering technique and irradiated with 100 MeV Ag7+ ions at three different fluences 3 × 1012, 1 × 1013 and 3 × 1013 ions/cm2. Rutherford Backscattering Spectrometry revealed Ag concentration to be ∼8.0 at.%, and measured thickness of the films was ∼55 nm. Structural properties of pristine and irradiated films have been analyzed by X-ray diffraction analysis and found that variation in crystallite size of the film with ion irradiation. X-ray photoelectron spectroscopy (XPS) indicates the formation of Ag-ZnO nanocomposite thin film with presence of Ag, Zn and O elements. Oxidation state of Ag and Zn also estimated by XPS analysis. Surface plasmon resonance (SPR) of Ag nanoparticle has appeared at ∼475 nm in the pristine thin film, which is blue shifted by ∼30 nm in film irradiated at fluence of 3 × 1012 ions/cm2 and completely disappeared in film irradiated at higher fluences, 1 × 1013 and 3 × 1013 ions/cm2. A marginal change in the optical band gap of Ag-ZnO nanocomposite thin film is also found with increasing ion fluence. Surface morphology of pristine and irradiated films have been studied using Atomic Force Microscopy (AFM). Raman and Photo-luminance (PL) spectra of nanocomposite thin films have been investigated to understand the ion induced modifications such as lattice defects and disordering in the nanocomposite thin film.

Epitaxial Fe/Y2O3 interfaces as a model system for oxide-dispersion-strengthened ferritic alloys

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kaspar, Tiffany C.; Bowden, Mark E.; Wang, Chong M.

2015-02-01

The fundamental mechanisms underlying the superior radiation tolerance properties of oxide-dispersion-strengthened ferritic steels and nanostructured ferritic alloys are poorly understood. Thin film heterostructures of Fe/Y2O3 can serve as a model system for fundamental studies of radiation damage. Epitaxial thin films of Y2O3 were deposited by pulsed laser deposition on 8% Y:ZrO2 (YSZ) substrates with (100), (110), and (111) orientation. Metallic Fe was subsequently deposited by molecular beam epitaxy. Characterization by x-ray diffraction and Rutherford backscattering spectrometry in the channeling geometry revealed a degree of epitaxial or axiotaxial ntation for Fe(211) deposited on Y2O3(110)/YSZ(110). In contrast, Fe on Y2O3(111)/YSZ(111) was fullymore » polycrystalline, and Fe on Y2O3(100)/YSZ(100) exhibited out-of-plane texture in the [110] direction with little or no preferential in-plane orientation. Scanning transmission electron microscopy imaging of Fe(211)/Y2O3(110)/YSZ(110) revealed a strongly islanded morphology for the Fe film, with no epitaxial grains visible in the cross-sectional sample. Well-ordered Fe grains with no orientation to the underlying Y2O3 were observed. Well-ordered crystallites of Fe with both epitaxial and non-epitaxial orientations on Y2O3 are a promising model system for fundamental studies of radiation damage phenomena. This is illustrated with preliminary results of He bubble formation following implantation with a helium ion microscope. He bubble formation is shown to preferentially occur at the Fe/Y2O3 interface.« less

Cation non-stoichiometry in pulsed laser deposited Sr{sub 2+y}Fe{sub 1+x}Mo{sub 1-x}O₆ epitaxial films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Meyer, T. L.; Woodward, P. M., E-mail: woodward.55@osu.edu; Dixit, M.

2014-07-07

Sr₂FeMoO₆ (SFMO) films were grown on SrTiO₃ (100)- and (111)-oriented substrates via pulsed laser deposition (PLD). In order to study the fundamental characteristics of deposition, films were grown in two different PLD chambers. In chamber I, the best films were grown with a relatively long substrate-to-target distance (89 mm), high substrate temperature (850 °C), and low pressure (50 mTorr) in a 95% Ar/5% H₂ atmosphere. Although X-ray diffraction (XRD) measurements indicate these films are single phase, Rutherford Backscattering (RBS) measurements reveal considerable non-stoichiometry, corresponding to a Sr₂Fe{sub 1–x}Mo{sub 1+x}O₆ composition with x≅0.2–0.3. This level of non-stoichiometry results in inferior magneticmore » properties. In chamber II, the best films were grown with a much shorter substrate-to-target distance (38 mm), lower temperature (680 °C), and higher pressure (225 mTorr). XRD measurements show that the films are single phase, and RBS measurements indicate that they are nearly stoichiometric. The degree of ordering between Fe and Mo was dependent on both the temperature and pressure used during deposition, reaching a maximum order parameter of 85%. The saturation magnetization increases as the Fe/Mo ordering increases, reaching a maximum of 2.4 μ B/f.u. Based on prior studies of bulk samples, one would expect a higher saturation magnetization for this degree of Fe/Mo order. The presence of extra strontium oxide layers in the form of Ruddlesden-Popper intergrowths appears to be responsible for the lower than expected saturation magnetization of these films.« less

RBS, XRR and optical reflectivity measurements of Ti-TiO{sub 2} thin films deposited by magnetron sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Drogowska, K.; Institute of Materials Science, Technische Universitaet Darmstadt, Petersenstrasse 23, 64287 Darmstadt; Tarnawski, Z., E-mail: tarnawsk@agh.edu.pl

2012-02-15

Highlights: Black-Right-Pointing-Pointer The single-, bi- and tri-layered films of Ti-TiO{sub 2} deposited onto Si(1 1 1) substrates. Black-Right-Pointing-Pointer Three methods RBS, XRR, optical reflectometer were used. Black-Right-Pointing-Pointer The real thickness of each layer was smaller than 50 nm. Black-Right-Pointing-Pointer Ti and TiO{sub 2} film-densities were slightly lower than the corresponding bulk values. -- Abstract: Single-, bi- and tri-layered films of Ti-TiO{sub 2} system were deposited by d.c. pulsed magnetron sputtering from metallic Ti target in an inert Ar or reactive Ar + O{sub 2} atmosphere. The nominal thickness of each layer was 50 nm. The chemical composition and its depthmore » profile were determined by Rutherford backscattering spectroscopy (RBS). Crystallographic structure was analysed by means of X-ray diffraction (XRD) at glancing incidence. X-ray reflectometry (XRR) was used as a complementary method for the film thickness and density evaluation. Modelling of the optical reflectivity spectra of Ti-TiO{sub 2} thin films deposited onto Si(1 1 1) substrates provided an independent estimate of the layer thickness. The combined analysis of RBS, XRR and reflectivity spectra indicated the real thickness of each layer less than 50 nm with TiO{sub 2} film density slightly lower than the corresponding bulk value. Scanning Electron Microscopy (SEM) cross-sectional images revealed the columnar growth of TiO{sub 2} layers. Thickness estimated directly from SEM studies was found to be in a good agreement with the results of RBS, XRR and reflectivity spectra.« less

[Preparation and Performance of Ultrafast γ-CuI Scintillation Conversion Screen].

PubMed

Xia, Ming; Gu, Mu; Liu, Xiao-lin; Liu, Bo; Huang, Shi-ming; Ni, Chen

2015-04-01

Micro-columnar structured γ-CuI scintillation conversion screen with columnar diameter in the micrometer and thickness about 17 µm were prepared by thermal evaporation method on quartz substrates with different temperatures. X-ray excited luminescence spectra of the screens show two peaks located at 430 nm and near 700 nm, which correspond to the fast and slow emission components, respectively. The fast one dominated. The intensity of 430 nm peak decreased as the substrate temperature rose from 170 °C to 210 °C. At the same time the intensity of 700 nm band increased. The changes may be attributed to the iodine loss from screen caused by the substrate temperature. The phenomenon of iodine loss was observed by the Rutherford backscattering experiment. The crystal structure of the screens presents (111) preferred orientation, which is independent of the substrate temperature. As the temperature rose to 210 °C, two weak additional peaks of (220) and (420) γ-CuI crystal planes in X-ray diffraction patterns appeared due to the increase in kinetic energy of CuI molecules. The scanning electron microscopy images of the screens showed that the columnar structure was improved when the substrate temperature increased from 170 °C to 190 °C, but it would be degenerated when the temperature continued to rise to 210 °C because of the surface and bulk diffusion effects of the depositing molecules. Finally, the spatial resolution of the γ-CuI scintillation screens was measured by knife-edge method, and they are 4.5, 7.2 and 5.6lp · mm(-1) for the screens prepared at the substrates temperatures of 170, 190 and 210 °C, respectively. The result shows that micro-column structure could improve the spatial resolution of γ-CuI scintillation screen.

Low temperature growth of gallium oxide thin films via plasma enhanced atomic layer deposition.

PubMed

O'Donoghue, Richard; Rechmann, Julian; Aghaee, Morteza; Rogalla, Detlef; Becker, Hans-Werner; Creatore, Mariadriana; Wieck, Andreas Dirk; Devi, Anjana

2017-12-21

Herein we describe an efficient low temperature (60-160 °C) plasma enhanced atomic layer deposition (PEALD) process for gallium oxide (Ga 2 O 3 ) thin films using hexakis(dimethylamido)digallium [Ga(NMe 2 ) 3 ] 2 with oxygen (O 2 ) plasma on Si(100). The use of O 2 plasma was found to have a significant improvement on the growth rate and deposition temperature when compared to former Ga 2 O 3 processes. The process yielded the second highest growth rates (1.5 Å per cycle) in terms of Ga 2 O 3 ALD and the lowest temperature to date for the ALD growth of Ga 2 O 3 and typical ALD characteristics were determined. From in situ quartz crystal microbalance (QCM) studies and ex situ ellipsometry measurements, it was deduced that the process is initially substrate-inhibited. Complementary analytical techniques were employed to investigate the crystallinity (grazing-incidence X-ray diffraction), composition (Rutherford backscattering analysis/nuclear reaction analysis/X-ray photoelectron spectroscopy), morphology (X-ray reflectivity/atomic force microscopy) which revealed the formation of amorphous, homogeneous and nearly stoichiometric Ga 2 O 3 thin films of high purity (carbon and nitrogen <2 at.%) under optimised process conditions. Tauc plots obtained via UV-Vis spectroscopy yielded a band gap of 4.9 eV and the transmittance values were more than 80%. Upon annealing at 1000 °C, the transformation to oxygen rich polycrystalline β-gallium oxide took place, which also resulted in the densification and roughening of the layer, accompanied by a slight reduction in the band gap. This work outlines a fast and efficient method for the low temperature ALD growth of Ga 2 O 3 thin films and provides the means to deposit Ga 2 O 3 upon thermally sensitive polymers like polyethylene terephthalate.

Ion energy/momentum effects during ion assisted growth of niobium nitride films

NASA Astrophysics Data System (ADS)

Klingenberg, Melissa L.

The research described herein was performed to better understand and discern ion energy vs. ion momentum effects during ion beam assisted (IBAD) film growth and their effects on residual stress, crystalline structure, morphology, and composition, which influence film tribological properties. NbxN y was chosen for this research because it is a refractory material that can possess a large number of crystalline structures, and it has been found to have good tribological properties. To separate the effects of momentum transfer per arriving atom (p/a), which considers bombarding species mass, energy, and ion-to-atom transport ratio, from those of energy deposition per arriving atom (E/a), a mass independent parameter, different inert ion beams (krypton, argon, and neon) were used to create a matrix of coatings formed using similar energy deposition, but different momentum transfer and vice versa. Deposition was conducted in a research-scale IBAD system using electron beam evaporation, a radio frequency ion source, and a neutral nitrogen gas backfill. Films were characterized using x-ray diffraction, atomic force microscopy, Rutherford backscattering spectrometry, and residual stress analysis. Direct and quantifiable effects of bombardment were observed; however, energy deposition and momentum transfer effects could not be completely separated, confirming that thin film processes are complex. Complexities arose from ion-specific interactions (ion size, recoil energy, per cent reflected neutrals, Penning ionization, etc.) and chemistry effects that are not considered by the simple models. Overall, it can be stated that bombardment promoted nitride formation, nanocrystallinity, and compressive stress formation; influenced morphology (which influenced post-deposition oxygen uptake) and stress evolution; increased lattice parameter; modified crystalline phase and texture; and led to inert gas incorporation. High stress levels correlated strongly with material disorder and closed-structured morphologies.

Gallium Oxide Nanostructures for High Temperature Sensors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chintalapalle, Ramana V.

Gallium oxide (Ga 2O 3) thin films were produced by sputter deposition by varying the substrate temperature (T s) in a wide range (T s=25-800 °C). The structural characteristics and electronic properties of Ga 2O 3 films were evaluated using X-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive X-ray spectrometry (EDS), Rutherford backscattering spectrometry (RBS) and spectrophotometric measurements. The effect of growth temperature is significant on the chemistry, crystal structure and morphology of Ga 2O 3 films. XRD and SEM analyses indicate that the Ga 2O 3 films grown at lower temperatures were amorphous while those grown at T s≥500more » oC were nanocrystalline. RBS measurements indicate the well-maintained stoichiometry of Ga 2O 3 films at T s=300-800 °C. The electronic structure determination indicated that the nanocrystalline Ga 2O 3films exhibit a band gap of ~5 eV. Tungsten (W) incorporated Ga 2O 3 films were produced by co-sputter deposition. W-concentration was varied by the applied sputtering-power. No secondary phase formation was observed in W-incorporated Ga 2O 3 films. W-induced effects were significant on the structure and electronic properties of Ga2O3 films. The band gap of Ga 2O 3 films without W-incorporation was ~5 eV. Oxygen sensor characteristics evaluated using optical and electrical methods indicate a faster response in W-doped Ga 2O 3 films compared to intrinsic Ga 2O 3 films. The results demonstrate the applicability of both intrinsic and W-doped Ga-oxide films for oxygen sensor application at temperatures ≥700 °C.« less

Crystallization and growth of Ni-Si alloy thin films on inert and on silicon substrates

NASA Astrophysics Data System (ADS)

Grimberg, I.; Weiss, B. Z.

1995-04-01

The crystallization kinetics and thermal stability of NiSi2±0.2 alloy thin films coevaporated on two different substrates were studied. The substrates were: silicon single crystal [Si(100)] and thermally oxidized silicon single crystal. In situ resistance measurements, transmission electron microscopy, x-ray diffraction, Auger electron spectroscopy, and Rutherford backscattering spectroscopy were used. The postdeposition microstructure consisted of a mixture of amorphous and crystalline phases. The amorphous phase, independent of the composition, crystallizes homogeneously to NiSi2 at temperatures lower than 200 °C. The activation energy, determined in the range of 1.4-2.54 eV, depends on the type of the substrate and on the composition of the alloyed films. The activation energy for the alloys deposited on the inert substrate was found to be lower than for the alloys deposited on silicon single crystal. The lowest activation energy was obtained for nonstoichiometric NiSi2.2, the highest for NiSi2—on both substrates. The crystallization mode depends on the structure of the as-deposited films, especially the density of the existing crystalline nuclei. Substantial differences were observed in the thermal stability of the NiSi2 compound on both substrates. With the alloy films deposited on the Si substrate, only the NiSi2 phase was identified after annealing to temperatures up to 800 °C. In the films deposited on the inert substrate, NiSi and NiSi2 phases were identified when the Ni content in the alloy exceeded 33 at. %. The effects of composition and the type of substrate on the crystallization kinetics and thermal stability are discussed.

Characterization of thin films of the solid electrolyte Li(x)Mg(1-2x)Al(2+x)O4 (x = 0, 0.05, 0.15, 0.25).

PubMed

Put, Brecht; Vereecken, Philippe M; Mees, Maarten J; Rosciano, Fabio; Radu, Iuliana P; Stesmans, Andre

2015-11-21

RF-sputtered thin films of spinel Li(x)Mg(1-2x)Al(2+x)O4 were investigated for use as solid electrolyte. The usage of this material can enable the fabrication of a lattice matched battery stack, which is predicted to lead to superior battery performance. Spinel Li(x)Mg(1-2x)Al(2+x)O4 thin films, with stoichiometry (x) ranging between 0 and 0.25, were formed after a crystallization anneal as shown by X-ray diffraction and transmission electron microscopy. The stoichiometry of the films was evaluated by elastic recoil detection and Rutherford backscattering and found to be slightly aluminum rich. The excellent electronic insulation properties were confirmed by both current-voltage measurements as well as by copper plating tests. The electrochemical stability window of the material was probed using cyclic voltammetry. Lithium plating and stripping was observed together with the formation of a Li-Pt alloy, indicating that Li-ions passed through the film. This observation contradicted with impedance measurements at open circuit potential, which showed no apparent Li-ion conductivity of the film. Impedance spectroscopy as a function of potential showed the occurrence of Li-ion intercalation into the Li(x)Mg(1-2x)Al(2+x)O4 layers. When incorporating Li-ions in the material the ionic conductivity can be increased by 3 orders of magnitude. Therefore it is anticipated that the response of Li(x)Mg(1-2x)Al(2+x)O4 is more adequate for a buffer layer than as the solid electrolyte.

A pseudo-3D approach based on electron backscatter diffraction and backscatter electron imaging to study the character of phase boundaries between Mg and long period stacking ordered phase in a Mg–2Y–Zn alloy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Afshar, Mehran, E-mail: m.afshar@mpie.de; Zaefferer, Stefan, E-mail: s.zaefferer@mpie.de

2015-03-15

In Mg–2 at.% Y–1 at.% Zn alloys, the LPSO (Long Period Stacking Ordered) phase is important to improve mechanical properties of the material. The aim of this paper is to present a study on the phase boundary character in these two-phase alloys. Using EBSD pattern analysis it was found that the 24R structure is the dominant LPSO phase structure in the current alloy. The phase boundary character between the Mg matrix and the LPSO phase was investigated using an improved pseudo-3D EBSD (electron backscatter diffraction) technique in combination with BSE or SE (backscatter or secondary electron) imaging. A large amountmore » of very low-angle phase boundaries was detected. The (0 0 0 2) plane in the Mg matrix which is parallel to the (0 0 0 24) plane in the LPSO phase was found to be the most frequent plane for these phase boundaries. This plane is supposed to be the habit plane of the eutectic co-solidification of the Mg matrix and the LPSO phase. - Highlights: • It is shown that for the investigated alloy the LPSO phase has mainly 24R crystal structure. • A new method is presented which allows accurate determination of the 5-parameter grain or phase boundary character. • It is found that the low-angle phase boundaries appearing in the alloy all have basal phase boundary planes.« less

Plasma enhanced chemical vapor deposition of wear resistant gradual a-Si1-x:Cx:H coatings on nickel-titanium for biomedical applications

NASA Astrophysics Data System (ADS)

Niermann, Benedikt; Böke, Marc; Schauer, Janine-Christina; Winter, Jörg

2010-03-01

Plasma enhanced chemical vapor deposition has been used to deposit thin films with gradual transitions from silicon to carbon on Cu, Ni, stainless steel, and NiTi. Thus show low stress, elasticity, and wear resistance with excellent adhesion on all metals under investigation. Already at low Si concentrations of 10 at. % the intrinsic stress is considerably reduced compared to pure diamondlike carbon (DLC) films. The deposition process is controlled by optical emission spectroscopy. This technique has been applied to monitor the growth precursors and to correlate them with the film composition. The compositions of the films were determined by Rutherford backscattering spectroscopy and XPS measurements. Due to the elastic properties of the gradual transition and the excellent biocompatibility of DLC, the described film systems present a useful coating for biomedical applications.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Hao; Lunt, Barry M.; Gates, Richard J.

A novel write-once-read-many (WORM) optical stack on Mylar tape is proposed as a replacement for magnetic tape for archival data storage. This optical tape contains a cosputtered bismuth–tellurium–selenium (BTS) alloy as the write layer sandwiched between thin, protective films of reactively sputtered carbon. The composition and thickness of the BTS layer were confirmed by Rutherford Backscattering (RBS) and atomic force microscopy (AFM), respectively. The C/BTS/C stack on Mylar was written to/marked by 532 nm laser pulses. Under the same conditions, control Mylar films without the optical stack were unaffected. Marks, which showed craters/movement of the write material, were characterized bymore » optical microscopy and AFM. The threshold laser powers for making marks on C/BTS/C stacks with different thicknesses were explored. Higher quality marks were made with a 60× objective compared to a 40× objective in our marking apparatus. Finally, the laser writing process was simulated with COMSOL.« less

Inorganic Thin-film Sensor Membranes with PLD-prepared Chalcogenide Glasses: Challenges and Implementation

PubMed Central

Kloock, Joachim P.; Mourzina, Youlia G.; Ermolenko, Yuri; Doll, Theodor; Schubert, Jürgen; Schöning, Michael J.

2004-01-01

Chalcogenide glasses offer an excellent “challenge” for their use and implementation in sensor arrays due to their good sensor-specific advantages in comparison to their crystalline counterparts. This paper will give an introduction on the preparation of chalcogenide glasses in the thin-film state. First, single microsensors have been prepared with the methods of semiconductor technology. In a next step, three microsensors are implemented onto one single silicon substrate to an “one chip” sensor array. Different ionselective chalcogenide glass membranes (PbSAgIAs2S3, CdSAgIAs2S3, CuAgAsSeTe and TlAgAsIS) were prepared by means of the pulsed laser deposition (PLD) process. The different sensor membranes and structures have been physically characterized by means of Rutherford backscattering spectrometry, scanning electron microscopy and video microscopy. The electrochemical behavior has been investigated by potentiometric measurements.

Site location and optical properties of Eu implanted sapphire

NASA Astrophysics Data System (ADS)

Marques, C.; Wemans, A.; Maneira, M. J. P.; Kozanecki, A.; da Silva, R. C.; Alves, E.

2005-10-01

Synthetic colourless transparent (0 0 0 1) sapphire crystals were implanted at room temperature with 100 keV europium ions to fluences up to 1 × 1016 cm-2. Surface damage is observed at low fluences, as seen by Rutherford backscattering spectrometry under channelling conditions. Optical absorption measurements revealed a variety of structures, most probably related to F-type defects characteristic of implantation damage. Thermal treatments in air or in vacuum up to 1000 °C do not produce noticeable changes both in the matrix or the europium profiles. However, the complete recovery of the implantation damage and some redistribution of the europium ions is achieved after annealing at 1300 °C in air. Detailed lattice site location studies performed for various axial directions allowed to assess the damage recovery and the incorporation of the Eu ions into well defined crystallographic sites, possibly in an oxide phase also inferred from optical absorption measurements.

Stress hysteresis and mechanical properties of plasma-enhanced chemical vapor deposited dielectric films

NASA Astrophysics Data System (ADS)

Thurn, Jeremy; Cook, Robert F.; Kamarajugadda, Mallika; Bozeman, Steven P.; Stearns, Laura C.

2004-02-01

A comprehensive survey is described of the responses of three plasma-enhanced chemical vapor deposited dielectric film systems to thermal cycling and indentation contact. All three films—silicon oxide, silicon nitride, and silicon oxy-nitride—exhibited significant nonequilibrium permanent changes in film stress on thermal cycling or annealing. The linear relationship between stress and temperature changed after the films were annealed at 300 °C, representing a structural alteration in the film reflecting a change in coefficient of thermal expansion or biaxial modulus. A double-substrate method was used to deduce both thermoelastic properties before and after the anneal of selected films and the results were compared with the modulus deconvoluted from small-scale depth-sensing indentation experiments (nanoindentation). Rutherford backscattering spectrometry and hydrogen forward scattering were used to deduce the composition of the films and it was found that all the films contained significant amounts of hydrogen.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Miranda, J.; Calva-Vasquez, G.; Solis, C.

Particle induced X-ray emission (PIeXE) and Rutherford backscattering (RBS) elemental analyses of tree rings and soils from forests around the Mexico City Metropolitan Area (MCMA) were performed. The aim was to estimate the impact of pollution on the forests. Cores from Pinus montezumae and Abies religiosa trees, in four forests around the MCMA (Desierto de los Leones, Iztapopocatepetl, Villa del Carbon and Zoquiapan) and a reference site (El Chico). Differences were observed in samples from the different forests, showing higher values in the areas closest to the MCMA. A correlation of several elements with ring width was found using clustermore » analysis. Additionally, soil analyses from different depths in the forests were carried out, trying to relate the elemental concentrations measured in the tree rings with cation mobility. In this case, samples taken in 1993 and 1999 were analyzed, showing elemental mobility to the various depths.« less

Dynamic defect annealing in wurtzite MgZnO implanted with Ar ions

NASA Astrophysics Data System (ADS)

Azarov, A. Yu.; Wendler, E.; Du, X. L.; Kuznetsov, A. Yu.; Svensson, B. G.

2015-09-01

Successful implementation of ion beams for modification of ternary ZnO-based oxides requires understanding and control of radiation-induced defects. Here, we study structural disorder in wurtzite ZnO and MgxZn1-xO (x ⩽ 0.3) samples implanted at room and 15 K temperatures with Ar ions in a wide fluence range (5 × 1012-3 × 1016 cm-2). The samples were characterized by Rutherford backscattering/channeling spectrometry performed in-situ without changing the sample temperature. The results show that all the samples exhibit high radiation resistance and cannot be rendered amorphous even for high ion fluences. Increasing the Mg content leads to some damage enhancement near the surface region; however, irrespective of the Mg content, the fluence dependence of bulk damage in the samples displays the so-called IV-stage evolution with a reverse temperature effect for high ion fluences.

Magnetoresistance enhancement in specular, bottom-pinned, Mn83Ir17 spin valves with nano-oxide layers

NASA Astrophysics Data System (ADS)

Veloso, A.; Freitas, P. P.; Wei, P.; Barradas, N. P.; Soares, J. C.; Almeida, B.; Sousa, J. B.

2000-08-01

Bottom-pinned Mn83Ir17 spin valves with enhanced specular scattering were fabricated, showing magnetoresistance (MR) values up to 13.6%, lower sheet resistance R□ and higher ΔR□. Two nano-oxide layers (NOL) are grown on both sides of the CoFe/Cu/CoFe spin valve structure by natural oxidation or remote plasma oxidation of the starting CoFe layer. Maximum MR enhancement is obtained after just 1 min plasma oxidation. Rutherford backscattering analysis shows that a 15±2 Å oxide layer grows at the expense of the initial (prior to oxidation) CoFe layer, with ˜12% reduction of the initial 40 Å CoFe thickness. X-ray reflectometry indicates that Kiessig fringes become better defined after NOL growth, indicating smoother inner interfaces, in agreement with the observed decrease of the spin valve ferromagnetic Néel coupling.

An experiment on the dynamics of ion implantation and sputtering of surfaces

NASA Astrophysics Data System (ADS)

Wright, G. M.; Barnard, H. A.; Kesler, L. A.; Peterson, E. E.; Stahle, P. W.; Sullivan, R. M.; Whyte, D. G.; Woller, K. B.

2014-02-01

A major impediment towards a better understanding of the complex plasma-surface interaction is the limited diagnostic access to the material surface while it is undergoing plasma exposure. The Dynamics of ION Implantation and Sputtering Of Surfaces (DIONISOS) experiment overcomes this limitation by uniquely combining powerful, non-perturbing ion beam analysis techniques with a steady-state helicon plasma exposure chamber, allowing for real-time, depth-resolved in situ measurements of material compositions during plasma exposure. Design solutions are described that provide compatibility between the ion beam analysis requirements in the presence of a high-intensity helicon plasma. The three primary ion beam analysis techniques, Rutherford backscattering spectroscopy, elastic recoil detection, and nuclear reaction analysis, are successfully implemented on targets during plasma exposure in DIONISOS. These techniques measure parameters of interest for plasma-material interactions such as erosion/deposition rates of materials and the concentration of plasma fuel species in the material surface.

Fluorine-doping in titanium dioxide by ion implantation technique

NASA Astrophysics Data System (ADS)

Yamaki, T.; Umebayashi, T.; Sumita, T.; Yamamoto, S.; Maekawa, M.; Kawasuso, A.; Itoh, H.

2003-05-01

We implanted 200 keV F + in single crystalline titanium dioxide (TiO 2) rutile at a nominal fluence of 1 × 10 16 to 1 × 10 17 ions cm -2 and then thermally annealed the implanted sample in air. The radiation damage and its recovery process during the annealing were analyzed by Rutherford backscattering spectrometry in channeling geometry and variable-energy positron annihilation spectroscopy. The lattice disorder was completely recovered at 1200 °C by the migration of point defects to the surface. According to secondary ion mass spectrometry analysis, the F depth profile was shifted to a shallower region along with the damage recovery and this resulted in the formation of an F-doped layer where the impurity concentration steadily increased toward the surface. The F doping proved to provide a modification to the conduction-band edge of TiO 2, as assessed by theoretical band calculations.

Fabrication de couches minces a memoire de forme et effets de l'irradiation ionique

NASA Astrophysics Data System (ADS)

Goldberg, Florent

1998-09-01

Nickel and titanium when combined in the right stoichiometric proportion (1:1) can form alloys showing the shape memory effect. Within the scope of this thesis, thin films of such alloys have been successfully produced by sputtering. Precise control of composition is crucial in order to obtain the shape memory effect. A combination of analytical tools which can accurately determine the behavior of such materials is also required (calorimetric analysis, crystallography, composition analysis, etc.). Rutherford backscattering spectrometry has been used for quantitative composition analysis. Thereafter irradiation of films with light ions (He+) of few MeV was shown to allow lowering of the characteristic premartensitic transformation temperatures while preserving the shape memory effect. Those results open the door to a new field of research, particularly for ion irradiation and its potential use as a tool to modify the thermomechanical behavior of shape memory thin film actuators.

RBS-channeling study of radiation damage in Ar{sup +} implanted CuInSe{sub 2} crystals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yakushev, Michael V., E-mail: michael.yakushev@strath.ac.uk; Ural Federal University, Ekaterinburg 620002; Institute of Solid State Chemistry of the Urals Branch of RAS, Ekaterinburg 620990

2016-09-15

Chalcopyrite solar cells are reported to have a high tolerance to irradiation by high energy electrons or ions, but the origin of this is not well understood. This work studies the evolution of damage in Ar{sup +}-bombarded CuInSe{sub 2} single crystal using Rutherford backscattering/channeling analysis. Ar{sup +} ions of 30 keV were implanted with doses in the range from 10{sup 12} to 3 × 10{sup 16} cm{sup −2} at room temperature. Implantation was found to create two layers of damage: (1) on the surface, caused by preferential sputtering of Se and Cu atoms; (2) at the layer of implanted Ar, possibly consisting of stackingmore » faults and dislocation loops. The damage in the second layer was estimated to be less than 2% of the theoretical prediction suggesting efficient healing of primary implantation defects.« less

Error Budgeting

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vinyard, Natalia Sergeevna; Perry, Theodore Sonne; Usov, Igor Olegovich

2017-10-04

We calculate opacity from k (hn)=-ln[T(hv)]/pL, where T(hv) is the transmission for photon energy hv, p is sample density, and L is path length through the sample. The density and path length are measured together by Rutherford backscatter. Δk =more » $$\\partial k$$\\ $$\\partial T$$ ΔT + $$\\partial k$$\\ $$\\partial (pL)$$. We can re-write this in terms of fractional error as Δk/k = Δ1n(T)/T + Δ(pL)/(pL). Transmission itself is calculated from T=(U-E)/(V-E)=B/B0, where B is transmitted backlighter (BL) signal and B 0 is unattenuated backlighter signal. Then ΔT/T=Δln(T)=ΔB/B+ΔB 0/B 0, and consequently Δk/k = 1/T (ΔB/B + ΔB$$_0$$/B$$_0$$ + Δ(pL)/(pL). Transmission is measured in the range of 0.2« less

High yield antibiotic producing mutants of Streptomyces erythreus induced by low energy ion implantation

NASA Astrophysics Data System (ADS)

Yu, Chen; Zhixin, Lin; Zuyao, Zou; Feng, Zhang; Duo, Liu; Xianghuai, Liu; Jianzhong, Tang; Weimin, Zhu; Bo, Huang

1998-05-01

Conidia of Streptomyces erythreus, an industrial microbe, were implanted by nitrogen ions with energy of 40-60 keV and fluence from 1 × 10 11 to 5 × 10 14 ions/cm 2. The logarithm value of survival fraction had good linear relationship with the logarithm value of fluence. Some mutants with a high yield of erythromycin were induced by ion implantation. The yield increment was correlated with the implantation fluence. Compared with the mutation results induced by ultraviolet rays, mutation effects of ion implantation were obvious having higher increasing erythromycin potency and wider mutation spectrum. The spores of Bacillus subtilis were implanted by arsenic ions with energy of 100 keV. The distribution of implanted ions was measured by Rutherford Backscattering Spectrometry (RBS) and calculated in theory. The mechanism of mutation induced by ion implantation was discussed.

An experiment on the dynamics of ion implantation and sputtering of surfaces.

PubMed

Wright, G M; Barnard, H A; Kesler, L A; Peterson, E E; Stahle, P W; Sullivan, R M; Whyte, D G; Woller, K B

2014-02-01

A major impediment towards a better understanding of the complex plasma-surface interaction is the limited diagnostic access to the material surface while it is undergoing plasma exposure. The Dynamics of ION Implantation and Sputtering Of Surfaces (DIONISOS) experiment overcomes this limitation by uniquely combining powerful, non-perturbing ion beam analysis techniques with a steady-state helicon plasma exposure chamber, allowing for real-time, depth-resolved in situ measurements of material compositions during plasma exposure. Design solutions are described that provide compatibility between the ion beam analysis requirements in the presence of a high-intensity helicon plasma. The three primary ion beam analysis techniques, Rutherford backscattering spectroscopy, elastic recoil detection, and nuclear reaction analysis, are successfully implemented on targets during plasma exposure in DIONISOS. These techniques measure parameters of interest for plasma-material interactions such as erosion/deposition rates of materials and the concentration of plasma fuel species in the material surface.

Preparation of conductive gold nanowires in confined environment of gold-filled polymer nanotubes.

PubMed

Mitschang, Fabian; Langner, Markus; Vieker, Henning; Beyer, André; Greiner, Andreas

2015-02-01

Continuous conductive gold nanofibers are prepared via the "tubes by fiber templates" process. First, poly(l-lactide) (PLLA)-stabilized gold nanoparticles (AuNP) with over 60 wt% gold are synthesized and characterized, including gel permeation chromatography coupled with a diode array detector. Subsequent electrospinning of these AuNP with template PLLA results in composite nanofibers featuring a high gold content of 57 wt%. Highly homogeneous gold nanowires are obtained after chemical vapor deposition of 345 nm of poly(p-xylylene) (PPX) onto the composite fibers followed by pyrolysis of the polymers at 1050 °C. The corresponding heat-induced transition from continuous gold-loaded polymer tubes to smooth gold nanofibers is studied by transmission electron microscopy and helium ion microscopy using both secondary electrons and Rutherford backscattered ions. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Study of new sheep bone and Zn/Ca ratio around TiAlV screw: PIXE RBS analysis

NASA Astrophysics Data System (ADS)

Guibert, G.; Munnik, F.; Langhoff, J. D.; Von Rechenberg, B.; Buffat, Ph. A.; Laub, D.; Faber, L.; Ducret, F.; Gerber, I.; Mikhailov, S.

2008-03-01

This study reports on in vivo particle induced X-ray emission (PIXE) measurements combined with Rutherford backscattering spectroscopy (RBS) analyses of new remodeled sheep bone formed around TiAlV screws. The implants (screws) were anodized by a modified TiMax™ process. The interface between the implant and the bone was carefully investigated. [Zn]/[Ca] in-depth composition profiles as well as Ca, Fe elemental maps were recorded. The thickness of new bone formed around the screw reached 300-400 μm. Osteon and Osteoid phases were identified in the new bone. A higher [Zn]/[Ca] ratio was observed in the new bone as compared to the mature bone. Blood vessels were observed in the bone in close contact with the screw. This study shows the potential of ion beam analysis for biological and biomedical characterization.

The effect of primary recoil spectrum on radiation induced segregation in nickel-silicon alloys

NASA Astrophysics Data System (ADS)

Averback, R. S.; Rehn, L. E.; Wagner, W.; Ehrhart, P.

1983-08-01

Segregation of silicon to the surface of Ni-12.7 at% Si alloys during 2.0-MeV He and 3.25-MeV Kr irradiations was measured using Rutherford backscattering spectrometry. For equal calculated defect production rates the Kr irradiation was < 3 % as efficient as the He irradiation for promoting segregation in the temperature range, 450 °C-580 °C. It was further observed that Kr preirradiation of specimens dramatically reduced segregation during subsequent He irradiation. A model for cascade annealing in Ni-Si alloys is presented which qualitatively explains the segregation results. The model assumes that small interstitial-atom-clusters form in individual cascades and that these clusters become trapped at silicon solute atoms. The vacancy thereby becomes the more mobile defect. The model should also have relevance for the observation that void swelling in nickel is suppressed by the addition of silicon solute.

Effects of He implantation on radiation induced segregation in Cu-Au and Ni-Si alloys

NASA Astrophysics Data System (ADS)

Iwase, A.; Rehn, L. E.; Baldo, P. M.; Funk, L.

Effects of He implantation on radiation induced segregation (RIS) in Cu-Au and Ni-Si alloys were investigated using in situ Rutherford backscattering spectrometry during simultaneous irradiation with 1.5-MeV He and low-energy (100 or 400-keV) He ions at elevated temperatures. RIS during single He ion irradiation, and the effects of pre-implantation with low-energy He ions, were also studied. RIS near the specimen surface, which was pronounced during 1.5-MeV He single-ion irradiation, was strongly reduced under low-energy He single-ion irradiation, and during simultaneous irradiation with 1.5-MeV He and low-energy He ions. A similar RIS reduction was also observed in the specimens pre-implanted with low-energy He ions. The experimental results indicate that the accumulated He atoms cause the formation of small bubbles, which provide additional recombination sites for freely migrating defects.

Surface segregation in a binary mixture of ionic liquids: Comparison between high-resolution RBS measurements and moleculardynamics simulations.

PubMed

Nakajima, Kaoru; Nakanishi, Shunto; Chval, Zdeněk; Lísal, Martin; Kimura, Kenji

2016-11-14

Surface structure of equimolar mixture of 1-ethyl-3-methylimidazolium bis(trifluoromethanesulfonyl)imide ([C 2 C 1 Im][Tf 2 N]) and 1-ethyl-3-methylimidazolium tetrafluoroborate ([C 2 C 1 Im][BF 4 ]) is studied using high-resolution Rutherford backscattering spectroscopy (HRBS) and molecular dynamics (MD) simulations. Both HRBS and MD simulations show enrichment of [Tf 2 N] in the first molecular layer although the degree of enrichment observed by HRBS is more pronounced than that predicted by the MD simulation. In the subsurface region, MD simulation shows a small depletion of [Tf 2 N] while HRBS shows a small enrichment here. This discrepancy is partially attributed to the artifact of the MD simulations. Since the number of each ion is fixed in a finite-size simulation box, surface enrichment of particular ion results in its artificial depletion in the subsurface region.

Surface segregation in a binary mixture of ionic liquids: Comparison between high-resolution RBS measurements and molecular dynamics simulations

NASA Astrophysics Data System (ADS)

Nakajima, Kaoru; Nakanishi, Shunto; Chval, Zdeněk; Lísal, Martin; Kimura, Kenji

2016-11-01

Surface structure of equimolar mixture of 1-ethyl-3-methylimidazolium bis(trifluoromethanesulfonyl)imide ([C2C1Im][Tf2N]) and 1-ethyl-3-methylimidazolium tetrafluoroborate ([C2C1Im][BF4]) is studied using high-resolution Rutherford backscattering spectroscopy (HRBS) and molecular dynamics (MD) simulations. Both HRBS and MD simulations show enrichment of [Tf2N] in the first molecular layer although the degree of enrichment observed by HRBS is more pronounced than that predicted by the MD simulation. In the subsurface region, MD simulation shows a small depletion of [Tf2N] while HRBS shows a small enrichment here. This discrepancy is partially attributed to the artifact of the MD simulations. Since the number of each ion is fixed in a finite-size simulation box, surface enrichment of particular ion results in its artificial depletion in the subsurface region.

Observation of enhanced infrared absorption in silicon supersaturated with gold by pulsed laser melting of nanometer-thick gold films

NASA Astrophysics Data System (ADS)

Chow, Philippe K.; Yang, Wenjie; Hudspeth, Quentin; Lim, Shao Qi; Williams, Jim S.; Warrender, Jeffrey M.

2018-04-01

We demonstrate that pulsed laser melting (PLM) of thin 1, 5, and 10 nm-thick vapor-deposited gold layers on silicon enhances its room-temperature sub-band gap infrared absorption, as in the case of ion-implanted and PLM-treated silicon. The former approach offers reduced fabrication complexity and avoids implantation-induced lattice damage compared to ion implantation and pulsed laser melting, while exhibiting comparable optical absorptance. We additionally observed strong broadband absorptance enhancement in PLM samples made using 5- and 10-nm-thick gold layers. Raman spectroscopy and Rutherford backscattering analysis indicate that such an enhancement could be explained by absorption by a metastable, disordered and gold-rich surface layer. The sheet resistance and the diode electrical characteristics further elucidate the role of gold-supersaturation in silicon, revealing the promise for future silicon-based infrared device applications.

The Effect of Platinum-coatings on Hydrogen- and Water-absorption and Desorption Characteristics of Lithium Zirconate

NASA Astrophysics Data System (ADS)

Tsuchiya, B.; Bandow, S.; Nagata, S.; Saito, K.; Tokunaga, K.; Morita, K.

Hydrogen (H)- and water (H2O)-storage and desorption characteristics of 25 nm thick Pt films onLi2ZrO3composite materials, exposed to normal air at room temperature, have been investigated by means of elastic recoil detection (ERD), Rutherford backscattering spectrometry (RBS), weight gain measurement (WGM), and thermal desorption spectroscopy (TDS) techniques. It was found by the ERD and TDS that H and H2O were absorbed into the Pt-coated Li2ZrO3 in air at room temperature and desorbed from it in vacuum at much low temperatures of approximately 317 and 309 K, respectively. In addition, the WGM and TDS spectra revealed that the absorption and desorption characters ofsome gases such as CH4, CO, and CO2including H as well as H2Ointo the Li2ZrO3 bulk were improved by Pt deposition.

Stopping cross sections of He + ions in bismuth

NASA Astrophysics Data System (ADS)

Kuldeep; Jain, Animesh K.

1985-06-01

The stopping cross sections, ɛ( E), of He + ions in bismuth have been measured by Rutherford backscattering spectrometry (RBS) at incident energies ranging from E = 1.6-3.4 MeV. The energy loss of He + ions and thicknesses of the bismuth films deposited on aluminium substrates were determined from the RBS spectra at each energy for scattering angles of 130° and 165°. The film thicknesses of some of the samples were also measured by weighing and the results compared with those from RBS. Parameters for energy dependence of stopping cross section in the Varelas-Biersack interpolation formula have been obtained for bismuth from a fit to all the available experimental data. Accuracy of our method based on RBS is demonstrated by measurements on copper, for which ɛ( E) is already well studied. It is also shown that reliable ɛ( E) values may be obtained even on samples with non-uniform film thickness.

Self-Assembled Gold Nano-Ripple Formation by Gas Cluster Ion Beam Bombardment.

PubMed

Tilakaratne, Buddhi P; Chen, Quark Y; Chu, Wei-Kan

2017-09-08

In this study, we used a 30 keV argon cluster ion beam bombardment to investigate the dynamic processes during nano-ripple formation on gold surfaces. Atomic force microscope analysis shows that the gold surface has maximum roughness at an incident angle of 60° from the surface normal; moreover, at this angle, and for an applied fluence of 3 × 10 16 clusters/cm², the aspect ratio of the nano-ripple pattern is in the range of ~50%. Rutherford backscattering spectrometry analysis reveals a formation of a surface gradient due to prolonged gas cluster ion bombardment, although the surface roughness remains consistent throughout the bombarded surface area. As a result, significant mass redistribution is triggered by gas cluster ion beam bombardment at room temperature. Where mass redistribution is responsible for nano-ripple formation, the surface erosion process refines the formed nano-ripple structures.

Applications of condensed matter understanding to medical tissues and disease progression: Elemental analysis and structural integrity of tissue scaffolds

NASA Astrophysics Data System (ADS)

Bradley, D. A.; Farquharson, M. J.; Gundogdu, O.; Al-Ebraheem, Alia; Che Ismail, Elna; Kaabar, W.; Bunk, O.; Pfeiffer, F.; Falkenberg, G.; Bailey, M.

2010-02-01

The investigations reported herein link tissue structure and elemental presence with issues of environmental health and disease, exemplified by uptake and storage of potentially toxic elements in the body, the osteoarthritic condition and malignancy in the breast and other soft tissues. Focus is placed on application of state-of-the-art ionizing radiation techniques, including, micro-synchrotron X-ray fluorescence (μ-SXRF) and particle-induced X-ray emission/Rutherford backscattering mapping (μ-PIXE/RBS), coherent small-angle X-ray scattering (cSAXS) and X-ray phase-contrast imaging, providing information on elemental make-up, the large-scale organisation of collagen and anatomical features of moderate and low atomic number media. For the particular situations under investigation, use of such facilities is allowing information to be obtained at an unprecedented level of detail, yielding new understanding of the affected tissues and the progression of disease.

Monte Carlo simulations of backscattering process in dislocation-containing SrTiO3 single crystal

NASA Astrophysics Data System (ADS)

Jozwik, P.; Sathish, N.; Nowicki, L.; Jagielski, J.; Turos, A.; Kovarik, L.; Arey, B.

2014-05-01

Studies of defects formation in crystals are of obvious importance in electronics, nuclear engineering and other disciplines where materials are exposed to different forms of irradiation. Rutherford Backscattering/Channeling (RBS/C) and Monte Carlo (MC) simulations are the most convenient tool for this purpose, as they allow one to determine several features of lattice defects: their type, concentration and damage accumulation kinetic. On the other hand various irradiation conditions can be efficiently modeled by ion irradiation method without leading to the radioactivity of the sample. Combination of ion irradiation with channeling experiment and MC simulations appears thus as a most versatile method in studies of radiation damage in materials. The paper presents the results on such a study performed on SrTiO3 (STO) single crystals irradiated with 320 keV Ar ions. The samples were analyzed also by using HRTEM as a complementary method which enables the measurement of geometrical parameters of crystal lattice deformation in the vicinity of dislocations. Once the parameters and their variations within the distance of several lattice constants from the dislocation core are known, they may be used in MC simulations for the quantitative determination of dislocation depth distribution profiles. The final outcome of the deconvolution procedure are cross-sections values calculated for two types of defects observed (RDA and dislocations).

Composition of Renaissance paint layers: simultaneous particle induced X-ray emission and backscattering spectrometry.

PubMed

de Viguerie, L; Beck, L; Salomon, J; Pichon, L; Walter, Ph

2009-10-01

Particle induced X-ray emission spectroscopy (PIXE) is now routinely used in the field of cultural heritage. Various setups have been developed to investigate the elemental composition of wood/canvas paintings or of cross-section samples. However, it is not possible to obtain information concerning the quantity of organic binder. Backscattering spectrometry (BS) can be a useful complementary method to overcome this limitation. In the case of paint layers, PIXE brings the elemental composition (major elements to traces) and the BS spectrum can give access to the proportion of pigment and binder. With the use of 3 MeV protons for PIXE and BS simultaneously, it was possible to perform quantitative analysis including C and O for which the non-Rutherford cross sections are intense. Furthermore, with the use of the same conditions for PIXE and BS, the experiment time and the potential damage by the ion beam were reduced. The results obtained with the external beam of the Accélérateur Grand Louvre pour l'Analyse Elementaire (AGLAE) facility on various test painting samples and on cross sections from Italian Renaissance masterpieces are shown. Simultaneous combination of PIXE and BS leads to a complete characterization of the paint layers: elemental composition and proportion of the organic binder have been determined and thus provide useful information about ancient oil painting recipes.

An Efficient Image Recovery Algorithm for Diffraction Tomography Systems

NASA Technical Reports Server (NTRS)

Jin, Michael Y.

1993-01-01

A diffraction tomography system has potential application in ultrasonic medical imaging area. It is capable of achieving imagery with the ultimate resolution of one quarter the wavelength by collecting ultrasonic backscattering data from a circular array of sensors and reconstructing the object reflectivity using a digital image recovery algorithm performed by a computer. One advantage of such a system is that is allows a relatively lower frequency wave to penetrate more deeply into the object and still achieve imagery with a reasonable resolution. An efficient image recovery algorithm for the diffraction tomography system was originally developed for processing a wide beam spaceborne SAR data...

Electron backscatter diffraction analysis of gold nanoparticles on Y{sub 1}Ba{sub 2}Cu{sub 3}O{sub 7−δ}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bochmann, A.; Teichert, S., E-mail: steffen.teichert@fh-jena.de; Katzer, C.

2015-06-07

It has been shown recently that the incorporation of gold nanoparticles into Y{sub 1}Ba{sub 2}Cu{sub 3}O{sub 7−δ} enhances the superconducting properties of this material in a significant way. Previous XRD and TEM investigations suggest different crystallographic relations of the gold nanoparticles with respect to the epitaxial Y{sub 1}Ba{sub 2}Cu{sub 3}O{sub 7−δ}. Here, detailed investigations of the crystal orientations for a large ensemble of gold nanoparticles with electron backscatter diffraction are reported. The average size of the gold nanoparticles is in the range of 60 nm–80 nm. We identified five different types of heteroepitaxial relationships between the gold nanoparticles and the superconductor film,more » resulting in complex pole figures. The observed different types of crystallographic orientations are discussed based on good lattice matching and the formation of low energy interfaces.« less

Characterisation of the incident beam and current diffraction capabilities on the VESUVIO spectrometer

NASA Astrophysics Data System (ADS)

Romanelli, G.; Krzystyniak, M.; Senesi, R.; Raspino, D.; Boxall, J.; Pooley, D.; Moorby, S.; Schooneveld, E.; Rhodes, N. J.; Andreani, C.; Fernandez-Alonso, F.

2017-09-01

The VESUVIO spectrometer at the ISIS pulsed neutron and muon source is a unique instrument amongst those available at neutron facilities. This is the only inverted-geometry neutron spectrometer accessing values of energy and wavevector transfer above tens of eV and {\\mathringA}-1 , respectively, and where deep inelastic neutron scattering experiments are routinely performed. As such, the procedure at the base of the technique has been previously described in an article published by this journal (Mayers and Reiter 2012 Meas. Sci. Technol. 23 045902). The instrument has recently witnessed an upsurge of interest due to a new trend to accommodate, within a single experiment, neutron diffraction and transmission measurements in addition to deep inelastic neutron scattering. This work presents a broader description of the instrument following these recent developments. In particular, we assess the absolute intensity and two-dimensional profile of the incident neutron beam and the capabilities of the backscattering diffraction banks. All results are discussed in the light of recent changes to the moderator viewed by the instrument. We find that VESUVIO has to be considered a high-resolution diffractometer as much as other diffractometers at ISIS, with a resolution as high as 2× 10-3 in backscattering. Also, we describe the extension of the wavelength range of the instrument to include lower neutron energies for diffraction measurements, an upgrade that could be readily applied to other neutron instruments as well.

Triangular Graphene Grain Growth on Cube-Textured Cu Substrates

DTIC Science & Technology

2011-01-01

rate of CuOx decreases with decreasing H 2 partial pressure. [ 32 ] According to the Cu-O phase diagram, [ 33 ] the eutectic temperature of Cu-CuO and...accelerating voltage of 2 KeV. The electron backscatter diffraction patterns (EBSP) were used to examine recrystallization and grain orientation of

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chang, Y.L.; Chen, P.Y.; Tsai, Y.T.

The crystallography of lenticular martensite, which formed in coarse austenite grains (size about 80 μm) after subzero treatment at − 196 °C (liquid nitrogen) for different holding times, was investigated using electron backscatter diffraction (EBSD). For the sample treated with 15 min of isothermal holding, more than 50 martensite plates (with a thickness of larger than 1 μm) that formed within a coarse austenite grain were employed to obtain the pole figures. The pole figures clearly indicated that the individual plate of lenticular martensite approximately adopted the Kurdjumov–Sachs (K–S) orientation relationship with respect to the austenite matrix. For the samplemore » treated with 30 s of isothermal holding, a few martensite plates that formed in variant pairings in a coarse austenite grain were analyzed. The results showed that zigzag couplings (including spear couplings), the major product of plate martensite, had an absolute dominance of a specific variant pair (V1/V17). The orientation gradient within a lenticular martensite plate was also measured using convergent beam electron diffraction (CBED). The evidence strongly suggests that the spread in diffracted intensity within pole figures is related to the misorientation gradient within the lenticular martensite plate. - Highlights: • The orientation relationship between lenticular martensite and austenite was investigated by pole figures via Electron Backscatter Diffraction (EBSD). • The initial stage of lenticular martensite formation was investigated, excluding interference from hard impingement. • In addition to EBSD, convergent beam electron diffraction (CBED) was used to measure the misorientation angle from the midrib to the untwinned region in lenticular martensite plate. • Zigzag couplings (including spear couplings), the major product of plate martensite, had an absolute dominance of a specific variant pair (V1/V17).« less

Structure Evolution and Distributions of Grain-Boundary Misorientainons in Submicrocrystalline Molybdenum Irradiated with a Pulsed Electron Beam

NASA Astrophysics Data System (ADS)

Stepanova, E. N.; Grabovetskaya, G. P.; Teresov, A. D.; Mishin, I. P.

2018-05-01

Using the methods of electron backscatter diffraction, electron microscopy and X-ray diffraction analysis, it is demonstrated that irradiation of the surface of a submicrocrystalline molybdenum specimen with a pulsed electron beam in a non-melt regime results in the formation of a gradient structure in its bulk. The irradiation temperature is shown to affect the density of defects, the value of stress, and the distributions of grain-boundary misorientations in the surface and bulk of the submicrocrystalline molybdenum specimens.

Three-Dimensional Characterization of Microstructure by Electron Back-Scatter Diffraction

DTIC Science & Technology

2007-03-28

Costa LDF, Cesar RM, Cesar J. 2000. Shape Analysis and Classification: Theory and Practice. Boca Raton, FL: CRC Press. 660 pp. 7. Williams RE. 1968...The distribution of grain boundaries in magnesia as a function of five macroscopic parameters. Acta Mater. 51:3663–74 27. Schaeben H, Apel M, Frank T

An automated method of quantifying ferrite microstructures using electron backscatter diffraction (EBSD) data.

PubMed

Shrestha, Sachin L; Breen, Andrew J; Trimby, Patrick; Proust, Gwénaëlle; Ringer, Simon P; Cairney, Julie M

2014-02-01

The identification and quantification of the different ferrite microconstituents in steels has long been a major challenge for metallurgists. Manual point counting from images obtained by optical and scanning electron microscopy (SEM) is commonly used for this purpose. While classification systems exist, the complexity of steel microstructures means that identifying and quantifying these phases is still a great challenge. Moreover, point counting is extremely tedious, time consuming, and subject to operator bias. This paper presents a new automated identification and quantification technique for the characterisation of complex ferrite microstructures by electron backscatter diffraction (EBSD). This technique takes advantage of the fact that different classes of ferrite exhibit preferential grain boundary misorientations, aspect ratios and mean misorientation, all of which can be detected using current EBSD software. These characteristics are set as criteria for identification and linked to grain size to determine the area fractions. The results of this method were evaluated by comparing the new automated technique with point counting results. The technique could easily be applied to a range of other steel microstructures. © 2013 Published by Elsevier B.V.

Microstructural and microtextural characterization of oxide scale on steel using electron backscatter diffraction.

PubMed

Birosca, S; Dingley, D; Higginson, R L

2004-03-01

High-temperature oxidation of steel has been extensively studied. The microstructure of iron oxides is, however, not well understood because of the difficulty in imaging it using conventional methods, such as optical or electron microscopy. A knowledge of the oxide microstructure and texture is critical in understanding how the oxide film behaves during high-temperature deformation of steels and more importantly how it can be removed following processing. Recently, electron back-scatter diffraction (EBSD) has proved to be a powerful technique for distinguishing the different phases in scales. This technique gives valuable information both on the microstructure and on the orientation relationships between the steel and the scale layers. In the current study EBSD has been used to investigate the microstructure and microtexture of iron oxide layers grown on interstitial free steel at different times and temperatures. Heat treatments have been carried out under normal oxidation conditions in order to relate the results to real steel manufacturing in industry. The composition, morphologies, microstructure and microtexture of selected conditions have been studied using EBSD.

Reconstruction of Laser-Induced Surface Topography from Electron Backscatter Diffraction Patterns.

PubMed

Callahan, Patrick G; Echlin, McLean P; Pollock, Tresa M; De Graef, Marc

2017-08-01

We demonstrate that the surface topography of a sample can be reconstructed from electron backscatter diffraction (EBSD) patterns collected with a commercial EBSD system. This technique combines the location of the maximum background intensity with a correction from Monte Carlo simulations to determine the local surface normals at each point in an EBSD scan. A surface height map is then reconstructed from the local surface normals. In this study, a Ni sample was machined with a femtosecond laser, which causes the formation of a laser-induced periodic surface structure (LIPSS). The topography of the LIPSS was analyzed using atomic force microscopy (AFM) and reconstructions from EBSD patterns collected at 5 and 20 kV. The LIPSS consisted of a combination of low frequency waviness due to curtaining and high frequency ridges. The morphology of the reconstructed low frequency waviness and high frequency ridges matched the AFM data. The reconstruction technique does not require any modification to existing EBSD systems and so can be particularly useful for measuring topography and its evolution during in situ experiments.

Effect of Welding Heat Input on Microstructure and Texture of Inconel 625 Weld Overlay Studied Using the Electron Backscatter Diffraction Method

NASA Astrophysics Data System (ADS)

Kim, Joon-Suk; Lee, Hae-Woo

2016-12-01

The grain size and the texture of three specimens prepared at different heat inputs were determined using optical microscopy and the electron backscatter diffraction method of scanning electron microscopy. Each specimen was equally divided into fusion line zone (FLZ), columnar dendrite zone (CDZ), and surface zone (SZ), according to the location of the weld. Fine dendrites were observed in the FLZ, coarse dendrites in the CDZ, and dendrites grew perpendicular to the FLZ and CDZ. As the heat input increased, the melted zone in the vicinity of the FLZ widened due to the higher Fe content. A lower image quality value was observed for the FLZ compared to the other zones. The results of grain size measurement in each zone showed that the grain size of the SZ became larger as the heat input increased. From the inverse pole figure (IPF) map in the normal direction (ND) and the rolling direction (RD), as the heat input increased, a specific orientation was formed. However, a dominant [001] direction was observed in the RD IPF map.

Relationships Between the Phase Transformation Kinetics, Texture Evolution, and Microstructure Development in a 304L Stainless Steel Under Biaxial Loading Conditions: Synchrotron X-ray and Electron Backscatter Diffraction Studies

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cakmak, Ercan; Choo, Hahn; Kang, Jun-Yun

2015-02-11

The relationships between the martensitic phase transformation kinetics, texture evolution, and the microstructure development in the parent austenite phase were studied for a 304L stainless steel that exhibits the transformation-induced plasticity effect under biaxial loading conditions at ambient temperature. The applied loading paths included: pure torsion, simultaneous biaxial torsion/tension, simultaneous biaxial torsion/compression, and stepwise loading of tension followed by torsion (i.e., first loading by uniaxial tension and then by pure torsion in sequence). Synchrotron X-ray and electron backscatter diffraction techniques were used to measure the evolution of the phase fractions, textures, and microstructures as a function of the applied strains.more » The influence of loading character and path on the changes in martensitic phase transformation kinetics is discussed in the context of (1) texture-transformation relationship and the preferred transformation of grains belonging to certain texture components over the others, (2) effects of axial strains on shear band evolutions, and (3) volume changes associated with martensitic transformation.« less

Crystallography and Morphology of Niobium Carbide in As-Cast HP-Niobium Reformer Tubes

NASA Astrophysics Data System (ADS)

Buchanan, Karl G.; Kral, Milo V.

2012-06-01

The microstructures of two as-cast heats of niobium-modified HP stainless steels were characterized. Particular attention was paid to the interdendritic niobium-rich carbides formed during solidification of these alloys. At low magnifications, these precipitates are grouped in colonies of similar lamellae. Higher magnifications revealed that the lamellae actually obtain two distinct morphologies. The type I morphology exhibits broad planar interfaces with a smooth platelike shape. Type II lamellae have undulating interfaces and an overall reticulated shape. To provide further insight into the origin of these two different morphologies, the microstructure and crystallography of each have been studied in detail using high resolution scanning electron microscopy, transmission electron microscopy, various electron diffraction methods (electron backscatter diffraction (EBSD), selected area diffraction (SAD), and convergent beam electron diffraction (CBED)), and energy dispersive X-ray spectroscopy.

Spectral dependence of backscattering coefficient of mixed phase clouds over West Africa measured with two-wavelength Raman polarization lidar: Features attributed to ice-crystals corner reflection

NASA Astrophysics Data System (ADS)

Veselovskii, I.; Goloub, P.; Podvin, T.; Tanre, D.; Ansmann, A.; Korenskiy, M.; Borovoi, A.; Hu, Q.; Whiteman, D. N.

2017-11-01

The existing models predict that corner reflection (CR) of laser radiation by simple ice crystals of perfect shape, such as hexagonal columns or plates, can provide a significant contribution to the ice cloud backscattering. However in real clouds the CR effect may be suppressed due to crystal deformation and surface roughness. In contrast to the extinction coefficient, which is spectrally independent, consideration of diffraction associated with CR results in a spectral dependence of the backscattering coefficient. Thus measuring the spectral dependence of the cloud backscattering coefficient, the contribution of CR can be identified. The paper presents the results of profiling of backscattering coefficient (β) and particle depolarization ratio (δ) of ice and mixed-phase clouds over West Africa by means of a two-wavelength polarization Mie-Raman lidar operated at 355 nm and 532 nm during the SHADOW field campaign. The lidar observations were performed at a slant angle of 43 degree off zenith, thus CR from both randomly oriented crystals and oriented plates could be analyzed. For the most of the observations the cloud backscatter color ratio β355/β532 was close to 1.0, and no spectral features that might indicate the presence of CR of randomly oriented crystals were revealed. Still, in two measurement sessions we observed an increase of backscatter color ratio to a value of nearly 1.3 simultaneously with a decrease of the spectral depolarization ratio δ355/δ532 ratio from 1.0 to 0.8 inside the layers containing precipitating ice crystals. We attribute these changes in optical properties to corner reflections by horizontally oriented ice plates.

A Rutherford Scattering Simulation with Microcomputer Graphics.

ERIC Educational Resources Information Center

Calle, Carlos I.; Wright, Lavonia F.

1989-01-01

Lists a program for a simulation of Rutherford's gold foil experiment in BASIC for both Apple II and IBM compatible computers. Compares Rutherford's model of the atom with Thompson's plum pudding model of the atom. (MVL)

Self-accelerating self-trapped nonlinear beams of Maxwell's equations.

PubMed

Kaminer, Ido; Nemirovsky, Jonathan; Segev, Mordechai

2012-08-13

We present shape-preserving self-accelerating beams of Maxwell's equations with optical nonlinearities. Such beams are exact solutions to Maxwell's equations with Kerr or saturable nonlinearity. The nonlinearity contributes to self-trapping and causes backscattering. Those effects, together with diffraction effects, work to maintain shape-preserving acceleration of the beam on a circular trajectory. The backscattered beam is found to be a key issue in the dynamics of such highly non-paraxial nonlinear beams. To study that, we develop two new techniques: projection operator separating the forward and backward waves, and reverse simulation. Finally, we discuss the possibility that such beams would reflect themselves through the nonlinear effect, to complete a 'U' shaped trajectory.

Oriented Nucleation of both Ge-Fresnoite and Benitoite/BaGe4O9 during the Surface Crystallisation of Glass Studied by Electron Backscatter Diffraction

PubMed Central

Wisniewski, Wolfgang; Patschger, Marek; Murdzheva, Steliana; Thieme, Christian; Rüssel, Christian

2016-01-01

Two glasses of the compositions 2 BaO - TiO2 - 2.75 GeO2 and 2 BaO – TiO2 –3.67 GeO2 (also known as BTG55) are annealed at temperatures from 680 to 970 °C to induce surface crystallization. The resulting samples are analyzed by X-ray diffraction (XRD) and scanning electron microscopy (SEM) including electron backscatter diffraction (EBSD). Ge-Fresnoite (Ba2TiGe2O8, BTG) is observed at the immediate surface of all samples and oriented nucleation is proven in both compositions. After a very fast kinetic selection, the crystal growth of BTG into the bulk occurs via highly oriented dendrites where the c-axes are oriented perpendicular to the surface. The growth of this oriented layer is finally blocked by dendritc BTG originating from bulk nucleation. The secondary phases BaTiGe3O9 (benitoite) and BaGe4O9 are also identified near the surface by XRD and localized by EBSD which additionally indicates orientation preferences for these phases. This behaviour is in contrast with previous reports from the Ba2TiSi2O8 as well as the Sr2TiSi2O8 systems. PMID:26853738

Crystallographic Characterization on Polycrystalline Ni-Mn-Ga Alloys with Strong Preferred Orientation.

PubMed

Li, Zongbin; Yang, Bo; Zou, Naifu; Zhang, Yudong; Esling, Claude; Gan, Weimin; Zhao, Xiang; Zuo, Liang

2017-04-27

Heusler type Ni-Mn-Ga ferromagnetic shape memory alloys can demonstrate excellent magnetic shape memory effect in single crystals. However, such effect in polycrystalline alloys is greatly weakened due to the random distribution of crystallographic orientation. Microstructure optimization and texture control are of great significance and challenge to improve the functional behaviors of polycrystalline alloys. In this paper, we summarize our recent progress on the microstructure control in polycrystalline Ni-Mn-Ga alloys in the form of bulk alloys, melt-spun ribbons and thin films, based on the detailed crystallographic characterizations through neutron diffraction, X-ray diffraction and electron backscatter diffraction. The presented results are expected to offer some guidelines for the microstructure modification and functional performance control of ferromagnetic shape memory alloys.

Influence of lateral and in-depth metal segregation on the patterning of ohmic contacts for GaN-based devices

NASA Astrophysics Data System (ADS)

Redondo-Cubero, A.; Vázquez, L.; Alves, L. C.; Corregidor, V.; Romero, M. F.; Pantellini, A.; Lanzieri, C.; Muñoz, E.

2014-05-01

The lateral and in-depth metal segregation of Au/Ni/Al/Ti ohmic contacts for GaN-based high electron mobility transistors were analysed as a function of the Al barrier's thickness (d). The surface of the contacts, characterized by atomic force and scanning electron microscopy, shows a transition from a fractal network of rough and complex island-like structures towards smoother and cauliflower-like fronts with increasing d. Rutherford backscattering spectrometry and energy dispersive x-ray spectroscopy (EDXS) at different energies were used to confirm the in-depth intermixing of the metals relevant for the final contact resistance. EDXS mapping reveals a significant lateral segregation too, where the resulting patterns depend on two competing NiAlx and AuAlx phases, the intermixing being controlled by the available amount of Al. The optimum ohmic resistance is not affected by the patterning process, but is mainly dependent on the partial interdiffusion of the metals.

Ion beam analyses of radionuclide migration in heterogeneous rocks

DOE Office of Scientific and Technical Information (OSTI.GOV)

Alonso, Ursula; Missana, Tiziana; Garcia-Gutierrez, Miguel

2013-07-18

The migration of radionuclides (RN) in the environment is a topic of general interest, for its implications on public health, and it is an issue for the long-term safety studies of deep geological repositories (DGR) for high-level radioactive waste. The role played by colloids on RN migration is also of great concern. Diffusion and sorption are fundamental mechanisms controlling RN migration in rocks and many experimental approaches are applied to determine transport parameters for low sorbing RN in homogeneous rocks. However, it is difficult to obtain relevant data for high sorbing RN or colloids, for which diffusion lengths are extremelymore » short, or within heterogeneous rocks, where transport might be different in different minerals. The ion beam techniques Rutherford Backscattering Spectrometry (RBS) and micro-Particle Induced X-Ray Emission ({mu}PIXE), rarely applied in the field, were selected for their micro-analytical potential to study RN diffusion and surface retention within heterogeneous rocks. Main achievements obtained during last 12 years are highlighted.« less

Optical and compositional characterization of SiOxNy and SiOx thin films deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition

NASA Astrophysics Data System (ADS)

Roschuk, T.; Wojcik, J.; Tan, X.; Davies, J. A.; Mascher, P.

2004-05-01

Thin silicon oxynitride (SiOxNy) and silicon-rich silicon-oxide (SiOx,x<=2) films of varying composition have been deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition. Films were deposited using various source gas flow rates while maintaining a constant chamber pressure. Thicknesses and refractive indices for these films were determined using ellipsometry. Bonding of the constituent atoms was analyzed using Fourier transform infrared (FTIR) spectroscopy. FTIR spectroscopy also allowed for the detection of bonded species such as hydrogen. Compositional characteristics were determined using various forms of ion beam analysis such as Rutherford backscattering and elastic recoil detection. These analysis techniques were used to determine the values of x and y, the molar fractions of oxygen and nitrogen, respectively, and the total amount of hydrogen present in the films. Using the results obtained from these methods the film characteristics were determined as a function of the deposition conditions. .

Total elemental composition of soils contaminated with wastewater irrigation by combining IBA techniques

NASA Astrophysics Data System (ADS)

Huerta, L.; Contreras-Valadez, R.; Palacios-Mayorga, S.; Miranda, J.; Calva-Vasquez, G.

2002-04-01

The purpose of this work was to obtain the total elemental composition of agricultural soils irrigated with well water and wastewater. The studied area is located in the Valle del Mezquital in Hidalgo State, Mexico. The studied soils were collected, every two months during one year. Particle induced X-ray emission (PIXE), Rutherford backscattering spectrometry (RBS) and nuclear reaction analysis (NRA) were applied for elemental analysis. PIXE analyses gave elemental contents of major and trace elements (Al, Si, P, S, Cl, K, Ca, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, As, Br, Rb, Sr, Y, Zr, and Pb). Total concentrations of Na, Mg, C, N and O were obtained by RBS and NRA. PIXE analyses were carried out with 2 MeV proton beams, RBS with 2 MeV helium ions, while NRA was applied with a 1.2 MeV deuterium beam. Results indicated that heavy metal total concentrations exceed the critical soil total concentrations according to environmental regulations.

Confinement and Ordering of Au Nanorods in Polymer Films

NASA Astrophysics Data System (ADS)

Hore, Michael J. A.; Mills, Eric; Liu, Yu; Composto, Russell J.

2009-03-01

Ordered arrays of gold nanorods (Au NRs) possess interesting optical properties that might be utilized in future devices. Au NRs functionalized with a poly(ethylene glycol)-thiol brush are incorporated into homopolymer or block copolymer (BCP) films. NR distribution and orientational correlations are studied as a function of nanorod concentration and spacial confinement via Rutherford backscattering spectrometry (RBS) and transmission electron microscopy, respectively. In particular, differences in the degree of nanorod ordering are presented for PMMA homopolymer films (d ˜ 45 nm) versus PS-b-PMMA BCP films (L/2 ˜ 40 nm), where higher ordering is seen in the case of BCP films. At moderate volume fractions of NRs, φ = 1% to 10%, the degree of ordering is moderate, and increases with increasing φ . However, coexistence between regions of higher ordering and isotropic orientations is observed. In addition to the planar confinement considered above, orientation of Au NRs confined to cylindrical P2VP domains is studied in PS-b-P2VP BCP films.

Enhancement of photoluminescence from nanocrystal β-FeSi2/SiO2 composite and relaxation of thermal quenching

NASA Astrophysics Data System (ADS)

Maeda, Yoshihito

2017-05-01

We have investigated the thermal quenching behavior of photoluminescence (PL) from β-FeSi2 (β-NC) embedded in Si (β-NC/Si) and SiO2 (β-NC/SiO2). The β-NC/SiO2 composite was prepared directly from the β-NC/Si composite by selective oxidation. In the β-NC/SiO2 composite, we found an increase in the critical temperature, which indicates the relaxation of thermal quenching for PL intensity. Furthermore, we observed a clear PL spectrum including the intrinsic A band PL at 300 K; however, the PL intensity was extremely low. Rutherford backscattering spectrometry (RBS) and photocarrier injection PL (PCI-PL) measurements revealed the reason why the β-NC/Si composites were maintained after oxidation. We discussed the thermal quenching behavior of both samples on the basis of a thermal activation model of holes from valence band wells at the heterointerface and confirmed that this model was appropriate for understanding the thermal quenching of these composites.

Surface modification of single crystal LiTaO3 by H and He implantation

NASA Astrophysics Data System (ADS)

Ma, Changdong; Lu, Fei; Jin, Lei; Xu, Bo; Fan, Ranran

2017-02-01

Defects production and evolution in H and He ions co-implanted LiTaO3 under different implantation order (H + He and He + H) are investigated. Rutherford backscattering spectrometry (RBS), infrared (IR) spectroscopy and transmission electron microscopy (TEM) are used to study the lattice damage, composition and structure change in the buried damage region. Obvious differences of ions aggregation mechanism are found in H and He implanted LiTaO3. Blistering or splitting of LiTaO3 is more easily achieved in the case where He is implanted first compared to the reverses case. Significant damage enhancement and micro-fractures are observed in samples with He preimplant. The dispersed damage in H-first sample is due to the destruction by He post-bombardment of H-clusters. This order effect indicates the strong aggregation and trapping ability of He ions and He bubbles. The effect of coimplantation parameters on the cleaving of LiTaO3 is discussed.

Certified ion implantation fluence by high accuracy RBS.

PubMed

Colaux, Julien L; Jeynes, Chris; Heasman, Keith C; Gwilliam, Russell M

2015-05-07

From measurements over the last two years we have demonstrated that the charge collection system based on Faraday cups can robustly give near-1% absolute implantation fluence accuracy for our electrostatically scanned 200 kV Danfysik ion implanter, using four-point-probe mapping with a demonstrated accuracy of 2%, and accurate Rutherford backscattering spectrometry (RBS) of test implants from our quality assurance programme. The RBS is traceable to the certified reference material IRMM-ERM-EG001/BAM-L001, and involves convenient calibrations both of the electronic gain of the spectrometry system (at about 0.1% accuracy) and of the RBS beam energy (at 0.06% accuracy). We demonstrate that accurate RBS is a definitive method to determine quantity of material. It is therefore useful for certifying high quality reference standards, and is also extensible to other kinds of samples such as thin self-supporting films of pure elements. The more powerful technique of Total-IBA may inherit the accuracy of RBS.

Perfect Composition Depth Profiling of Ionic Liquid Surfaces Using High-resolution RBS/ERDA.

PubMed

Nakajima, Kaoru; Zolboo, Enkhbayar; Ohashi, Tomohiro; Lísal, Martin; Kimura, Kenji

2016-01-01

In order to reveal the surface structures of large molecular ionic liquids (ILs), the near-surface elemental depth distributions of 1-alkyl-3-methylimidazolium bis(trifluoromethanesulfonyl)imide ([C n C 1 Im][Tf 2 N], n = 2, 6, 10) were studied using high-resolution Rutherford backscattering spectroscopy (HRBS) in combination with high-resolution elastic recoil detection analysis (HR-ERDA). The elemental depth profiles of all constituent elements, including hydrogen, were derived from HR-ERDA/HRBS measurements, so that the profiles would reproduce both HR-ERDA and HRBS spectra simultaneously. The derived elemental depth profiles agree with state-of-the-art molecular dynamics simulations, indicating the feasibility of this method. A controversy concerning the preferential orientation of [C 2 C 1 Im] at the surface has been resolved by this new combination analysis; namely, the [C 2 C 1 Im] cation has a preferential orientation with the ethyl chain pointing towards the vacuum in the topmost molecular layer.

Automatic energy calibration algorithm for an RBS setup

DOE Office of Scientific and Technical Information (OSTI.GOV)

Silva, Tiago F.; Moro, Marcos V.; Added, Nemitala

2013-05-06

This work describes a computer algorithm for automatic extraction of the energy calibration parameters from a Rutherford Back-Scattering Spectroscopy (RBS) spectrum. Parameters like the electronic gain, electronic offset and detection resolution (FWHM) of a RBS setup are usually determined using a standard sample. In our case, the standard sample comprises of a multi-elemental thin film made of a mixture of Ti-Al-Ta that is analyzed at the beginning of each run at defined beam energy. A computer program has been developed to extract automatically the calibration parameters from the spectrum of the standard sample. The code evaluates the first derivative ofmore » the energy spectrum, locates the trailing edges of the Al, Ti and Ta peaks and fits a first order polynomial for the energy-channel relation. The detection resolution is determined fitting the convolution of a pre-calculated theoretical spectrum. To test the code, data of two years have been analyzed and the results compared with the manual calculations done previously, obtaining good agreement.« less

Monitoring Ion Track Formation Using In Situ RBS/c, ToF-ERDA, and HR-PIXE.

PubMed

Karlušić, Marko; Fazinić, Stjepko; Siketić, Zdravko; Tadić, Tonči; Cosic, Donny Domagoj; Božičević-Mihalić, Iva; Zamboni, Ivana; Jakšić, Milko; Schleberger, Marika

2017-09-06

The aim of this work is to investigate the feasibility of ion beam analysis techniques for monitoring swift heavy ion track formation. First, the use of the in situ Rutherford backscattering spectrometry in channeling mode to observe damage build-up in quartz SiO₂ after MeV heavy ion irradiation is demonstrated. Second, new results of the in situ grazing incidence time-of-flight elastic recoil detection analysis used for monitoring the surface elemental composition during ion tracks formation in various materials are presented. Ion tracks were found on SrTiO₃, quartz SiO₂, a-SiO₂, and muscovite mica surfaces by atomic force microscopy, but in contrast to our previous studies on GaN and TiO₂, surface stoichiometry remained unchanged. Third, the usability of high resolution particle induced X-ray spectroscopy for observation of electronic dynamics during early stages of ion track formation is shown.

Impact of thermal treatment on the optical performance of InGaN/GaN light emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Meneghini, Matteo, E-mail: matteo.meneghini@dei.unipd.it; Meneghesso, Gaudenzio; Zanoni, Enrico

2015-10-15

This paper describes a detailed analysis of the effects of high temperatures on the optical performance and structural characteristics of GaN-based LED structures with a high threading dislocation density. Results show that, as a consequence of storage at 900 °C in N{sub 2} atmosphere, the samples exhibit: (i) an increase in the efficiency of GaN and quantum-well luminescence, well correlated to an increase in carrier lifetime; (ii) a decrease in the parasitic luminescence peaks related to Mg acceptors, which is correlated to the reduction in the concentration of Mg in the p-type region, detected by Secondary Ion Mass Spectroscopy (SIMS);more » (iii) a diffusion of acceptor (Mg) atoms to the quantum well region; (iv) a reduction in the yield of Rutherford Backscattering Spectrometry (RBS)-channeling measurements, possibly due to a partial re-arrangement of the dislocations, which is supposed to be correlated to the increase in radiative efficiency (see (i))« less

Simulation of RBS spectra with known 3D sample surface roughness

NASA Astrophysics Data System (ADS)

Malinský, Petr; Siegel, Jakub; Hnatowicz, Vladimir; Macková, Anna; Švorčík, Václav

2017-09-01

The Rutherford Backscattering Spectrometry (RBS) is a technique for elemental depth profiling with a nanometer depth resolution. Possible surface roughness of analysed samples can deteriorate the RBS spectra and makes their interpretation more difficult and ambiguous. This work describes the simulation of RBS spectra which takes into account real 3D morphology of the sample surface obtained by AFM method. The RBS spectrum is calculated as a sum of the many particular spectra obtained for randomly chosen particle trajectories over sample 3D landscape. The spectra, simulated for different ion beam incidence angles, are compared to the experimental ones measured with 2.0 MeV 4He+ ions. The main aim of this work is to obtain more definite information on how a particular surface morphology and measuring geometry affects the RBS spectra and derived elemental depth profiles. A reasonable agreement between the measured and simulated spectra was found and the results indicate that the AFM data on the sample surface can be used for the simulation of RBS spectra.

Theoretical approach to oxygen atom degradation of silver

NASA Technical Reports Server (NTRS)

Fromhold, Albert T., Jr.; Noh, Seung; Beshears, Ronald; Whitaker, Ann F.; Little, Sally A.

1987-01-01

Based on available Rutherford backscattering spectrometry (RBS), proton induced X-ray emission (PIXE) and ellipsometry data obtained on silver specimens subjected to atomic oxygen attack in low Earth orbit STS flight 41-G, a theory was developed to model the oxygen atom degradation of silver. The diffusion of atomic oxygen in a microscopically nonuniform medium is an essential constituent of the theory. The driving force for diffusion is the macroscopic electrochemical potential gradient developed between the specimen surface exposed to the ambient and the bulk of the silver specimen. The longitudinal electric effect developed parallel to the gradient is modified by space charge of the diffusing charged species. Lateral electric fields and concentration differences also exist due to the nonuniform nature of the medium. The lateral concentration differences are found to be more important than the lateral electric fields in modifying the diffusion rate. The model was evaluated numerically. Qualitative agreement exists between the kinetics predicted by the theory and kinetic data taken in ground-based experiments utilizing a plasma asher.

Enhancement of Ag nanoparticles concentration by prior ion implantation

NASA Astrophysics Data System (ADS)

Mu, Xiaoyu; Wang, Jun; Liu, Changlong

2017-09-01

Thermally grown SiO2 layer on Si substrates were singly or sequentially implanted with Zn or Cu and Ag ions at the same fluence of 2 × 1016/cm2. The profiles of implanted species, structure, and spatial distribution of the formed nanoparticles (NPs) have been characterized by the cross-sectional transmission electron microscope (XTEM) and Rutherford backscattering spectrometry (RBS). It is found that pre-implantation of Zn or Cu ions could suppress the self sputtering of Ag atoms during post Ag ion implantation, which gives rise to fabrication of Ag NPs with a high density. Moreover, it has also been demonstrated that the suppressing effect strongly depends on the applied energy and mobility of pre-implanted ions. The possible mechanism for the enhanced Ag NPs concentration has been discussed in combination with SRIM simulations. Both vacancy-like defects acting as the increased nucleation sites for Ag NPs and a high diffusivity of prior implanted ions in SiO2 play key roles in enhancing the deposition of Ag implants.

Interfacial thermal degradation in inverted organic solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Greenbank, William; Hirsch, Lionel; Wantz, Guillaume

2015-12-28

The efficiency of organic photovoltaic (OPV) solar cells is constantly improving; however, the lifetime of the devices still requires significant improvement if the potential of OPV is to be realised. In this study, several series of inverted OPV were fabricated and thermally aged in the dark in an inert atmosphere. It was demonstrated that all of the devices undergo short circuit current-driven degradation, which is assigned to morphology changes in the active layer. In addition, a previously unreported, open circuit voltage-driven degradation mechanism was observed that is highly material specific and interfacial in origin. This mechanism was specifically observed inmore » devices containing MoO{sub 3} and silver as hole transporting layers and electrode materials, respectively. Devices with this combination were among the worst performing devices with respect to thermal ageing. The physical origins of this mechanism were explored by Rutherford backscattering spectrometry and atomic force microscopy and an increase in roughness with thermal ageing was observed that may be partially responsible for the ageing mechanism.« less

Microstructural evolution of ion-irradiated sol–gel-derived thin films

DOE PAGES

Shojaee, S. A.; Qi, Y.; Wang, Y. Q.; ...

2017-07-17

In this paper, the effects of ion irradiation on the microstructural evolution of sol–gel-derived silica-based thin films were examined by combining the results from Fourier transform infrared, Raman, and X-ray photoelectron spectroscopy, Rutherford backscattering spectrometry, and elastic recoil detection. Variations in the chemical composition, density, and structure of the constituent phases and interfaces were studied, and the results were used to propose a microstructural model for the irradiated films. It was discovered that the microstructure of the films after ion irradiation and decomposition of the starting organic materials consisted of isolated hydrogenated amorphous carbon clusters within an amorphous and carbon-incorporatedmore » silica network. A decrease in the bond angle of Si–O–Si bonds in amorphous silica network along with an increase in the concentration of carbon-rich SiO x C y tetrahedra were the major structural changes caused by ion irradiation. Finally, in addition, hydrogen release from free carbon clusters was observed with increasing ion energy and fluence.« less

Kinetic mechanism of the thermal-induced self-organization of Au/Si nanodroplets on Si(100): Size and roughness evolution

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ruffino, F.; Canino, A.; Grimaldi, M. G.

Very thin Au layer was deposited on Si(100) using the sputtering technique. By annealing at 873 K Au/Si nanodroplets were formed and their self-organization was induced changing the annealing time. The evolution of droplet size distribution, center-to-center distance distribution, and droplet density as a function of the annealing time at 873 K was investigated by Rutherford backscattering spectrometry, atomic force microscopy (AFM), and scanning electron microscopy. As a consequence of such study, the droplet clustering is shown to be a ripening process of hemispherical three-dimensional structures limited by the Au surface diffusion. The application of the ripening theory allowed usmore » to calculate the surface diffusion coefficient and all other parameters needed to describe the entire process. Furthermore, the AFM measurements allowed us to study the roughness evolution of the sputtered Au thin film and compare the experimental data with the dynamic scaling theories of growing interfaces.« less

Reverse osmosis membrane composition, structure and performance modification by bisulphite, iron(III), bromide and chlorite exposure.

PubMed

Ferrer, O; Gibert, O; Cortina, J L

2016-10-15

Reverse osmosis (RO) membrane exposure to bisulphite, chlorite, bromide and iron(III) was assessed in terms of membrane composition, structure and performance. Membrane composition was determined by Rutherford backscattering spectrometry (RBS) and membrane performance was assessed by water and chloride permeation, using a modified version of the solution-diffusion model. Iron(III) dosage in presence of bisulphite led to an autooxidation of the latter, probably generating free radicals which damaged the membrane. It comprised a significant raise in chloride passage (chloride permeation coefficient increased 5.3-5.1 fold compared to the virgin membrane under the conditions studied) rapidly. No major differences in terms of water permeability and membrane composition were observed. Nevertheless, an increase in the size of the network pores, and a raise in the fraction of aggregate pores of the polyamide (PA) layer were identified, but no amide bond cleavage was observed. These structural changes were therefore, in accordance with the transport properties observed. Copyright © 2016 Elsevier Ltd. All rights reserved.

Microwave remote plasma enhanced-atomic layer deposition system with multicusp confinement chamber

NASA Astrophysics Data System (ADS)

Dechana, A.; Thamboon, P.; Boonyawan, D.

2014-10-01

A microwave remote Plasma Enhanced-Atomic Layer Deposition system with multicusp confinement chamber is established at the Plasma and Beam Physics research facilities, Chiang Mai, Thailand. The system produces highly-reactive plasma species in order to enhance the deposition process of thin films. The addition of the multicusp magnetic fields further improves the plasma density and uniformity in the reaction chamber. Thus, the system is more favorable to temperature-sensitive substrates when heating becomes unwanted. Furthermore, the remote-plasma feature, which is generated via microwave power source, offers tunability of the plasma properties separately from the process. As a result, the system provides high flexibility in choice of materials and design experiments, particularly for low-temperature applications. Performance evaluations of the system were carried on coating experiments of Al2O3 layers onto a silicon wafer. The plasma characteristics in the chamber will be described. The resulted Al2O3 films—analyzed by Rutherford Backscattering Spectrometry in channeling mode and by X-ray Photoelectron Spectroscopy techniques—will be discussed.

Monitoring Ion Track Formation Using In Situ RBS/c, ToF-ERDA, and HR-PIXE

PubMed Central

Karlušić, Marko; Fazinić, Stjepko; Siketić, Zdravko; Tadić, Tonči; Cosic, Donny Domagoj; Božičević-Mihalić, Iva; Zamboni, Ivana; Jakšić, Milko; Schleberger, Marika

2017-01-01

The aim of this work is to investigate the feasibility of ion beam analysis techniques for monitoring swift heavy ion track formation. First, the use of the in situ Rutherford backscattering spectrometry in channeling mode to observe damage build-up in quartz SiO2 after MeV heavy ion irradiation is demonstrated. Second, new results of the in situ grazing incidence time-of-flight elastic recoil detection analysis used for monitoring the surface elemental composition during ion tracks formation in various materials are presented. Ion tracks were found on SrTiO3, quartz SiO2, a-SiO2, and muscovite mica surfaces by atomic force microscopy, but in contrast to our previous studies on GaN and TiO2, surface stoichiometry remained unchanged. Third, the usability of high resolution particle induced X-ray spectroscopy for observation of electronic dynamics during early stages of ion track formation is shown. PMID:28878186

Microwave remote plasma enhanced-atomic layer deposition system with multicusp confinement chamber.

PubMed

Dechana, A; Thamboon, P; Boonyawan, D

2014-10-01

A microwave remote Plasma Enhanced-Atomic Layer Deposition system with multicusp confinement chamber is established at the Plasma and Beam Physics research facilities, Chiang Mai, Thailand. The system produces highly-reactive plasma species in order to enhance the deposition process of thin films. The addition of the multicusp magnetic fields further improves the plasma density and uniformity in the reaction chamber. Thus, the system is more favorable to temperature-sensitive substrates when heating becomes unwanted. Furthermore, the remote-plasma feature, which is generated via microwave power source, offers tunability of the plasma properties separately from the process. As a result, the system provides high flexibility in choice of materials and design experiments, particularly for low-temperature applications. Performance evaluations of the system were carried on coating experiments of Al2O3 layers onto a silicon wafer. The plasma characteristics in the chamber will be described. The resulted Al2O3 films-analyzed by Rutherford Backscattering Spectrometry in channeling mode and by X-ray Photoelectron Spectroscopy techniques-will be discussed.

Preparation of thin-film (Ba(0.5),Sr(0.5))TiO3 by the laser ablation technique and electrical properties

NASA Astrophysics Data System (ADS)

Yoon, Soon-Gil; Lee, Jai-Chan; Safari, A.

1994-09-01

The chemical composition and electrical properties were investigated for epitaxially crystallized (Ba(0.5),Sr(0.5))TiO3 (BST) films deposited on Pt/MgO and YBa2Cu3O(7-x) (YBCO)/MgO substrates by the laser ablation technique. Rutherford backscattering spectroscopy analysis shows that thin films on Pt/MgO have almost the same stoichiometric composition as the target material. Films deposited at 600 C exhibited an excellent epitaxial growth, a dielectric constant of 430, and a dissipation factor of 0.02 at 10 kHz frequency. They have a charge storage density of 40 fC/sq micron at an applied electric field of 0.15 MV/cm. Leakage current density of BST thin films on Pt/MgO was smaller than on YBCO/MgO. Their leakage current density is about 0.8 microA/sq cm at an applied electric field of 0.15 MV/cm.

Mechanical properties and structure evolution of single-crystalline silicon irradiated by 1 MeV Au+ and Cu+ ions

NASA Astrophysics Data System (ADS)

Liang, Wei; Zhu, Fei; Ling, Yunhan; Liu, Kezhao; Hu, Yin; Pan, Qifa; Chen, Limin; Zhang, Zhengjun

2018-05-01

Mechanical and structural evolutions of single-crystalline silicon irradiated by a series of doses 1 MeV Au+ ions and Cu+ ions are characterized by Surface laser-acoustic wave spectroscopy by (LA wave), Rutherford backscattering spectrometry and channeling (RBS/C) and transmission electron microscopy (TEM). The behavior of implanted Au+ and Cu+ ions was also simulated by using Stopping and range of ions in matter (SRIM) software package, respectively. It is demonstrated that LA wave and RBS could be applied for accurate evaluation of the TEM observed amorphous layer's thickness. The modified mechanical properties depend on the species and the dose of implantation. For 1 MeV Au+ ions, the threshold dose of completely amorphous is 5 × 1014 atoms/cm2, while the one for Cu+ ions is 5 × 1015 atoms/cm2. Upon completely amorphous, the young's modulus and layer density decreased significantly while saturated with the dose increasing sequentially.

Characterization of TiCN coatings deposited by magnetron sputter-ion plating process: RBS and GDOS complementary analyses

NASA Astrophysics Data System (ADS)

Freire, F. L., Jr.; Senna, L. F.; Achete, C. A.; Hirsch, T.

1998-03-01

Hard TiCN films were deposited by dc-magnetron sputter-ion plating technique onto high-speed carbon steel S-6-5-2 (M 2). For selected deposition conditions, TiCN films were also deposited onto Si substrates. A Ti target was sputtered in ArCH 4N 2 atmosphere. The argon flux (12 sccm) was fixed and corresponds to 90% of the total flux, whereas the N 2 flux ranged from 3% to 9% of the total flux. The total pressure in the chamber during film deposition was 8-9 × 10 -2Pa. The substrate bias, Vb, was between 0 and -140V and the substrate temperature, Ts, was 350°C. Film composition and depth profile of the elements were obtained by Rutherford backscattering spectrometry (RBS) and glow discharge optical spectroscopy (GDOS). Some limitations of both techniques in analysing TiCN films were presented. The effect of methane poisoing of the Ti target and how it influences the film composition was discussed.

Impact of thermal treatment on the optical performance of InGaN/GaN light emitting diodes

NASA Astrophysics Data System (ADS)

Meneghini, Matteo; Zhu, Dandan; Humphreys, Colin J.; Berti, Marina; Gasparotto, Andrea; Cesca, Tiziana; Vinattieri, Anna; Bogani, Franco; Meneghesso, Gaudenzio; Zanoni, Enrico

2015-10-01

This paper describes a detailed analysis of the effects of high temperatures on the optical performance and structural characteristics of GaN-based LED structures with a high threading dislocation density. Results show that, as a consequence of storage at 900 °C in N2 atmosphere, the samples exhibit: (i) an increase in the efficiency of GaN and quantum-well luminescence, well correlated to an increase in carrier lifetime; (ii) a decrease in the parasitic luminescence peaks related to Mg acceptors, which is correlated to the reduction in the concentration of Mg in the p-type region, detected by Secondary Ion Mass Spectroscopy (SIMS); (iii) a diffusion of acceptor (Mg) atoms to the quantum well region; (iv) a reduction in the yield of Rutherford Backscattering Spectrometry (RBS)-channeling measurements, possibly due to a partial re-arrangement of the dislocations, which is supposed to be correlated to the increase in radiative efficiency (see (i)).

Low Temperature Ohmic Contact Formation of Ni2Si on N-type 4H-SiC and 6H-SiC

NASA Technical Reports Server (NTRS)

Elsamadicy, A. M.; Ila, D.; Zimmerman, R.; Muntele, C.; Evelyn, L.; Muntele, I.; Poker, D. B.; Hensley, D.; Hirvonen, J. K.; Demaree, J. D.;

Palladium silicide formation under the influence of nitrogen and oxygen impurities

NASA Technical Reports Server (NTRS)

Ho, K. T.; Lien, C.-D.; Nicolet, M.-A.

1985-01-01

The effect of impurities on the growth of the Pd2Si layer upon thermal annealing of a Pd film on 100 line-type and amorphous Si substrates is investigated. Nitrogen and oxygen impurities are introduced into either Pd or Si which are subsequently annealed to form Pd2Si. The complementary techniques of Rutherford backscattering spectrometry, and N-15(p, alpha)C-12 or O-18(p, alpha)N-15 nuclear reaction, are used to investigate the behavior of nitrogen or oxygen and the alterations each creates during silicide formation. Both nitrogen and oxygen retard the silicide growth rate if initially present in Si. When they are initially in Pd, there is no significant retardation; instead, an interesting snow-plowing effect of N or O by the reaction interface of Pd2Si is observed. By using N implanted into Si as a marker, Pd and Si appear to trade roles as the moving species when the silicide front reaches the nitrogen-rich region.

Surface structuring in polypropylene using Ar+ beam sputtering: Pattern transition from ripples to dot nanostructures

NASA Astrophysics Data System (ADS)

Goyal, Meetika; Aggarwal, Sanjeev; Sharma, Annu; Ojha, Sunil

2018-05-01

Temporal variations in nano-scale surface morphology generated on Polypropylene (PP) substrates utilizing 40 keV oblique argon ion beam have been presented. Due to controlled variation of crucial beam parameters i.e. ion incidence angle and erosion time, formation of ripple patterns and further its transition into dot nanostructures have been realized. Experimental investigations have been supported by evaluation of Bradley and Harper (B-H) coefficients estimated using SRIM (The Stopping and Range of Ions in Matter) simulations. Roughness of pristine target surfaces has been accredited to be a crucial factor behind the early time evolution of nano-scale patterns over the polymeric surface. Study of Power spectral density (PSD) spectra reveals that smoothing mechanism switch from ballistic drift to ion enhanced surface diffusion (ESD) which can be the most probable cause for such morphological transition under given experimental conditions. Compositional analysis and depth profiling of argon ion irradiated specimens using Rutherford Backscattering Spectroscopy (RBS) has also been correlated with the AFM findings.

Development of quantitative laser ionization mass spectrometry (LIMS). Final report, 1 Aug 87-1 Jan 90

DOE Office of Scientific and Technical Information (OSTI.GOV)

Odom, R.W.

1991-06-04

The objective of the research was to develop quantitative microanalysis methods for dielectric thin films using the laser ionization mass spectrometry (LIMS) technique. The research involved preparation of thin (5,000 A) films of SiO2, Al2O3, MgF2, TiO2, Cr2O3, Ta2O5, Si3N4, and ZrO2, and doping these films with ion implant impurities of 11B, 40Ca, 56Fe, 68Zn, 81Br, and 121Sb. Laser ionization mass spectrometry (LIMS), secondary ion mass spectrometry (SIMS) and Rutherford backscattering spectrometry (RBS) were performed on these films. The research demonstrated quantitative LIMS analysis down to detection levels of 10-100 ppm, and led to the development of (1) a compoundmore » thin film standards product line for the performing organization, (2) routine LIMS analytical methods, and (3) the manufacture of high speed preamplifiers for time-of-flight mass spectrometry (TOF-MS) techniques.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shojaee, S. A.; Qi, Y.; Wang, Y. Q.

In this paper, the effects of ion irradiation on the microstructural evolution of sol–gel-derived silica-based thin films were examined by combining the results from Fourier transform infrared, Raman, and X-ray photoelectron spectroscopy, Rutherford backscattering spectrometry, and elastic recoil detection. Variations in the chemical composition, density, and structure of the constituent phases and interfaces were studied, and the results were used to propose a microstructural model for the irradiated films. It was discovered that the microstructure of the films after ion irradiation and decomposition of the starting organic materials consisted of isolated hydrogenated amorphous carbon clusters within an amorphous and carbon-incorporatedmore » silica network. A decrease in the bond angle of Si–O–Si bonds in amorphous silica network along with an increase in the concentration of carbon-rich SiO x C y tetrahedra were the major structural changes caused by ion irradiation. Finally, in addition, hydrogen release from free carbon clusters was observed with increasing ion energy and fluence.« less

The bonding of protective films of amorphic diamond to titanium

NASA Astrophysics Data System (ADS)

Collins, C. B.; Davanloo, F.; Lee, T. J.; Jander, D. R.; You, J. H.; Park, H.; Pivin, J. C.

1992-04-01

Films of amorphic diamond can be deposited from laser plasma ions without the use of catalysts such as hydrogen or fluorine. Prepared without columnar patterns of growth, the layers of this material have been reported to have ``bulk'' values of mechanical properties that have suggested their usage as protective coatings for metals. Described here is a study of the bonding and properties realized in one such example, the deposition of amorphic diamond on titanium. Measurements with Rutherford backscattering spectrometry and transmission electron microscopy showed that the diamond coatings deposited from laser plasmas were chemically bonded to Ti substrates in 100-200-Å-thick interfacial layers containing some crystalline precipitates of TiC. Resistance to wear was estimated with a modified sand blaster and in all cases the coating was worn away without any rupture or deterioration of the bonding layer. Such wear was greatly reduced and lifetimes of the coated samples were increased by a factor of better than 300 with only 2.7 μm of amorphic diamond.

Laboratory studies of charged particle erosion of SO2 ice and applications to the frosts of Io

NASA Technical Reports Server (NTRS)

Lanzerotti, L. J.; Brown, W. L.; Augustyniak, W. M.; Johnson, R. E.; Armstrong, T. P.

1982-01-01

The removal and/or redistribution of SO2 frosts on the surface of the first Galilean satellite, Io, can occur through the erosion of these frosts by the magnetosphere particle environment of the satellite. The energy, species, and temperature dependence of the erosion rates of SO2 ice films by charged particles have been studied in laboratory experiments. Rutherford backscattering and thin film techniques are used in the experiments. The ice temperature is varied between about 10 K and the sublimation temperature. The erosion rates are found to have a temperature-independent and a temperature-dependent regime and to be much greater, for 10-2000 keV ions, than those predicted by the usual sputtering process. The laboratory results are used together with measured magnetosphere particle fluxes in the vicinity of Io to estimate the erosion rates of SO2 ice films from the satellite and implications therefrom on an SO2 atmosphere on Io.

Oxidation and metal-insertion in molybdenite surfaces: evaluation of charge-transfer mechanisms and dynamics

PubMed Central

Ramana, CV; Becker, U; Shutthanandan, V; Julien, CM

2008-01-01

Molybdenum disulfide (MoS2), a layered transition-metal dichalcogenide, has been of special importance to the research community of geochemistry, materials and environmental chemistry, and geotechnical engineering. Understanding the oxidation behavior and charge-transfer mechanisms in MoS2 is important to gain better insight into the degradation of this mineral in the environment. In addition, understanding the insertion of metals into molybdenite and evaluation of charge-transfer mechanism and dynamics is important to utilize these minerals in technological applications. Furthermore, a detailed investigation of thermal oxidation behavior and metal-insertion will provide a basis to further explore and model the mechanism of adsorption of metal ions onto geomedia. The present work was performed to understand thermal oxidation and metal-insertion processes of molybdenite surfaces. The analysis was performed using atomic force microscopy (AFM), scanning electron microscopy (SEM), transmission electron microscopy (TEM), Rutherford backscattering spectrometry (RBS), and nuclear reaction analysis (NRA). Structural studies using SEM and TEM indicate the local-disordering of the structure as a result of charge-transfer process between the inserted lithium and the molybdenite layer. Selected area electron diffraction measurements indicate the large variations in the diffusivity of lithium confirming that the charge-transfer is different along and perpendicular to the layers in molybdenite. Thermal heating of molybenite surface in air at 400°C induces surface oxidation, which is slow during the first hour of heating and then increases significantly. The SEM results indicate that the crystals formed on the molybdenite surface as a result of thermal oxidation exhibit regular thin-elongated shape. The average size and density of the crystals on the surface is dependent on the time of annealing; smaller size and high density during the first one-hour and significant increase in size associated with a decrease in density with further annealing. PMID:18534025

Oxidation and metal-insertion in molybdenite surfaces: evaluation of charge-transfer mechanisms and dynamics.

PubMed

Ramana, C V; Becker, U; Shutthanandan, V; Julien, C M

2008-06-05

Molybdenum disulfide (MoS2), a layered transition-metal dichalcogenide, has been of special importance to the research community of geochemistry, materials and environmental chemistry, and geotechnical engineering. Understanding the oxidation behavior and charge-transfer mechanisms in MoS2 is important to gain better insight into the degradation of this mineral in the environment. In addition, understanding the insertion of metals into molybdenite and evaluation of charge-transfer mechanism and dynamics is important to utilize these minerals in technological applications. Furthermore, a detailed investigation of thermal oxidation behavior and metal-insertion will provide a basis to further explore and model the mechanism of adsorption of metal ions onto geomedia.The present work was performed to understand thermal oxidation and metal-insertion processes of molybdenite surfaces. The analysis was performed using atomic force microscopy (AFM), scanning electron microscopy (SEM), transmission electron microscopy (TEM), Rutherford backscattering spectrometry (RBS), and nuclear reaction analysis (NRA).Structural studies using SEM and TEM indicate the local-disordering of the structure as a result of charge-transfer process between the inserted lithium and the molybdenite layer. Selected area electron diffraction measurements indicate the large variations in the diffusivity of lithium confirming that the charge-transfer is different along and perpendicular to the layers in molybdenite. Thermal heating of molybenite surface in air at 400 degrees C induces surface oxidation, which is slow during the first hour of heating and then increases significantly. The SEM results indicate that the crystals formed on the molybdenite surface as a result of thermal oxidation exhibit regular thin-elongated shape. The average size and density of the crystals on the surface is dependent on the time of annealing; smaller size and high density during the first one-hour and significant increase in size associated with a decrease in density with further annealing.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Coussy, Samuel; Grangeon, Sylvain; Bataillard, Philippe

The prediction of the long term trace element mobility in anthropogenic soils would be a way to anticipate land management and should help in reusing slightly contaminated materials. In the present study, iron (Fe) and zinc (Zn) status evolution was investigated in a 100-year old Technosol. The site of investigation is an old brownfield located in the Nord-Pas-de-Calais region (France) which has not been reshaped since the beginning of the last century. The whole soil profile was sampled as a function of depth, and trace elements mobility at each depth was determined by batch leaching test. A specific focus onmore » Fe and Zn status was carried out by bulk analyses, such as selective dissolution, X-ray diffraction (XRD) and X-ray absorption spectroscopy (XAS). Fe and Zn status in the profile samples was also studied using laterally resolved techniques such as μ-particle induced X-ray emission (μ-PIXE) and μ-Rutherford backscattering spectroscopy (μ-RBS). The results indicate that (i) Fe is mainly under Fe(III) form, except a minor contribution of Fe(II) in the deeper samples, (ii) some Fe species inherited from the past have been weathered and secondary minerals are constituted of metal-bearing sulphates and Fe (hydr)oxides, (iii) ferrihydrite is formed during pedogenesis (iv) 20 to 30% more Fe (hydr)oxides are present in the surface than in depth and (v) Zn has tetrahedral coordination and is sorbed to phases of increasing crystallinity when depth increases. Zn-bearing phases identified in the present study are: complex Fe, Mn, Zn sulphides, sulphates, organic matter, and ferrihydrite. Soil formation on such material does not induce a dramatic increase of Zn solubility since efficient scavengers are concomitantly formed in the system. However, Technosols are highly heterogeneous and widely differ from one place to another. The behavior examined in this study is not generic and will depend on the type of Technosol and on the secondary minerals formed as well as on the nature and amount of organic matter.« less

The Influence of Plasma-Based Nitriding and Oxidizing Treatments on the Mechanical and Corrosion Properties of CoCrMo Biomedical Alloy

NASA Astrophysics Data System (ADS)

Noli, Fotini; Pichon, Luc; Öztürk, Orhan

2018-04-01

Plasma-based nitriding and/or oxidizing treatments were applied to CoCrMo alloy to improve its surface mechanical properties and corrosion resistance for biomedical applications. Three treatments were performed. A set of CoCrMo samples has been subjected to nitriding at moderate temperatures ( 400 °C). A second set of CoCrMo samples was oxidized at 395 °C in pure O2. The last set of CoCrMo samples was nitrided and subsequently oxidized under the experimental conditions of previous sets (double treatment). The microstructure and morphology of the layers formed on the CoCrMo alloy were investigated by X-ray diffraction, Atomic Force Microscopy, and Scanning Electron Microscopy. In addition, nitrogen and oxygen profiles were determined by Glow Discharge Optical Emission Spectroscopy, Rutherford Backscattering Spectroscopy, Energy-Dispersive X-ray, and Nuclear Reaction Analysis. Significant improvement of the Vickers hardness of the CoCrMo samples after plasma nitriding was observed due to the supersaturated nitrogen solution and the formation of an expanded FCC γ N phase and CrN precipitates. In the case of the oxidized samples, Vickers hardness improvement was minimal. The corrosion behavior of the samples was investigated in simulated body fluid (0.9 pct NaCl solution at 37 °C) using electrochemical techniques (potentiodynamic polarization and cyclic voltammetry). The concentration of metal ions released from the CoCrMo surfaces was determined by Instrumental Neutron Activation Analysis. The experimental results clearly indicate that the CoCrMo surface subjected to the double surface treatment consisting in plasma nitriding and plasma oxidizing exhibited lower deterioration and better resistance to corrosion compared to the nitrided, oxidized, and untreated samples. This enhancement is believed to be due to the formation of a thicker and more stable layer.

Local texture and strongly linked conduction in spray-pyrolyzed TlBa2Ca2Cu3O(8+x) deposits

NASA Astrophysics Data System (ADS)

Kroeger, D. M.; Goyal, A.; Specht, E. D.; Wang, Z. L.; Tkaczyk, J. E.; Sutliff, J. A.; Deluca, J. A.

Local texture in polycrystalline TlBa2Ca2 Cu3O(8+x) deposits has been determined from transmission electron microscopy, electron backscatter diffraction patterns and x-ray diffraction. The small-grained deposits had excellent c-axis alignment and contained colonies of grains with similar but not identical a-axis orientations. Most grain boundaries within a colony have small misorientation angles and should not be weak links. It is proposed that long range conduction utilizes a percolative network of small angle grain boundaries at colony intersections.

High-resolution neutron-diffraction measurements to 8 kbar

NASA Astrophysics Data System (ADS)

Bull, C. L.; Fortes, A. D.; Ridley, C. J.; Wood, I. G.; Dobson, D. P.; Funnell, N. P.; Gibbs, A. S.; Goodway, C. M.; Sadykov, R.; Knight, K. S.

2017-10-01

We describe the capability to measure high-resolution neutron powder diffraction data to a pressure of at least 8 kbar. We have used the HRPD instrument at the ISIS neutron source and a piston-cylinder design of pressure cell machined from a null-scattering titanium zirconium alloy. Data were collected under hydrostatic conditions from an elpasolite perovskite La?NiMnO?; by virtue of a thinner cell wall on the incident-beam side of the cell, it was possible to obtain data in the instrument's highest resolution back-scattering detector banks up to a maximum pressure of 8.5 kbar.

Diffractive paths for weak localization in quantum billiards

NASA Astrophysics Data System (ADS)

Březinová, Iva; Stampfer, Christoph; Wirtz, Ludger; Rotter, Stefan; Burgdörfer, Joachim

2008-04-01

We study the weak-localization effect in quantum transport through a clean ballistic cavity with regular classical dynamics. We address the question which paths account for the suppression of conductance through a system where disorder and chaos are absent. By exploiting both quantum and semiclassical methods, we unambiguously identify paths that are diffractively backscattered into the cavity (when approaching the lead mouths from the cavity interior) to play a key role. Diffractive scattering couples transmitted and reflected paths and is thus essential to reproduce the weak-localization peak in reflection and the corresponding antipeak in transmission. A comparison of semiclassical calculations featuring these diffractive paths yields good agreement with full quantum calculations and experimental data. Our theory provides system-specific predictions for the quantum regime of few open lead modes and can be expected to be relevant also for mixed as well as chaotic systems.

Characterization of X80 and X100 Microalloyed Pipeline Steel Using Quantitative X-ray Diffraction

NASA Astrophysics Data System (ADS)

Wiskel, J. B.; Li, X.; Ivey, D. G.; Henein, H.

2018-06-01

Quantitative X-ray diffraction characterization of four (4) X80 and three (3) X100 microalloyed steels was undertaken. The effect of through-thickness position, processing parameters, and composition on the measured crystallite size, microstrain, and J index (relative magnitude of crystallographic texture) was determined. Microstructure analysis using optical microscopy, scanning electron microscopy, transmission electron microscopy, and electron-backscattered diffraction was also undertaken. The measured value of microstrain increased with increasing alloy content and decreasing cooling interrupt temperature. Microstructural features corresponding to crystallite size in the X80 steels were both above and below the detection limit for quantitative X-ray diffraction. The X100 steels consistently exhibited microstructure features below the crystallite size detection limit. The yield stress of each steel increased with increasing microstrain. The increase in microstrain from X80 to X100 is also associated with a change in microstructure from predominantly polygonal ferrite to bainitic ferrite.

Anisotropic deformation of extruded magnesium alloy AZ31 under uniaxial compression: A study with simultaneous in situ synchrotron x-ray imaging and diffraction

DOE PAGES

Lu, L.; Huang, J. W.; Fan, D.; ...

2016-08-29

In situ synchrotron x-ray imaging and diffraction are used to investigate anisotropic deformation of an extruded magnesium alloy AZ31 under uniaxial compression along two different directions, with the loading axis (LA) either parallel or perpendicular to the extrusion direction (ED), referred to as LA∥ED and LAED, respectively. Multiscale measurements including stress–strain curves (macroscale), x-ray digital image correlation (mesoscale), and diffraction (microscale) are obtained simultaneously. Electron backscatter diffraction is performed on samples collected at various strains to characterize deformation twins. The rapid increase in strain hardening rate for the LA∥ED loading is attributed to marked {101¯2} extension twinning and subsequent homogenizationmore » of deformation, while dislocation motion leads to inhomogeneous deformation and a decrease in strain hardening rate.« less

Effects of length dispersity and film fabrication on the sheet resistance of copper nanowire transparent conductors

NASA Astrophysics Data System (ADS)

Borchert, James W.; Stewart, Ian E.; Ye, Shengrong; Rathmell, Aaron R.; Wiley, Benjamin J.; Winey, Karen I.

2015-08-01

Development of thin-film transparent conductors (TC) based on percolating networks of metal nanowires has leaped forward in recent years, owing to the improvement of nanowire synthetic methods and modeling efforts by several research groups. While silver nanowires are the first commercially viable iteration of this technology, systems based on copper nanowires are not far behind. Here we present an analysis of TCs composed of copper nanowire networks on sheets of polyethylene terephthalate that have been treated with various oxide-removing post treatments to improve conductivity. A pseudo-2D rod network modeling approach has been modified to include lognormal distributions in length that more closely reflect experimental data collected from the nanowire TCs. In our analysis, we find that the copper nanowire TCs are capable of achieving comparable electrical performance to silver nanowire TCs with similar dimensions. Lastly, we present a method for more accurately determining the nanowire area coverage in a TC over a large area using Rutherford Backscattering Spectrometry (RBS) to directly measure the metal content in the TCs. These developments will aid research and industry groups alike in the characterization of nanowire based TCs.Development of thin-film transparent conductors (TC) based on percolating networks of metal nanowires has leaped forward in recent years, owing to the improvement of nanowire synthetic methods and modeling efforts by several research groups. While silver nanowires are the first commercially viable iteration of this technology, systems based on copper nanowires are not far behind. Here we present an analysis of TCs composed of copper nanowire networks on sheets of polyethylene terephthalate that have been treated with various oxide-removing post treatments to improve conductivity. A pseudo-2D rod network modeling approach has been modified to include lognormal distributions in length that more closely reflect experimental data collected from the nanowire TCs. In our analysis, we find that the copper nanowire TCs are capable of achieving comparable electrical performance to silver nanowire TCs with similar dimensions. Lastly, we present a method for more accurately determining the nanowire area coverage in a TC over a large area using Rutherford Backscattering Spectrometry (RBS) to directly measure the metal content in the TCs. These developments will aid research and industry groups alike in the characterization of nanowire based TCs. Electronic supplementary information (ESI) available: Contains calibration curve for %T vs. area fraction. See DOI: 10.1039/c5nr03671b

Crystallographic Characterization on Polycrystalline Ni-Mn-Ga Alloys with Strong Preferred Orientation

PubMed Central

Li, Zongbin; Yang, Bo; Zou, Naifu; Zhang, Yudong; Esling, Claude; Gan, Weimin; Zhao, Xiang; Zuo, Liang

2017-01-01

Heusler type Ni-Mn-Ga ferromagnetic shape memory alloys can demonstrate excellent magnetic shape memory effect in single crystals. However, such effect in polycrystalline alloys is greatly weakened due to the random distribution of crystallographic orientation. Microstructure optimization and texture control are of great significance and challenge to improve the functional behaviors of polycrystalline alloys. In this paper, we summarize our recent progress on the microstructure control in polycrystalline Ni-Mn-Ga alloys in the form of bulk alloys, melt-spun ribbons and thin films, based on the detailed crystallographic characterizations through neutron diffraction, X-ray diffraction and electron backscatter diffraction. The presented results are expected to offer some guidelines for the microstructure modification and functional performance control of ferromagnetic shape memory alloys. PMID:28772826

Electron backscatter diffraction applied to lithium sheets prepared by broad ion beam milling.

PubMed

Brodusch, Nicolas; Zaghib, Karim; Gauvin, Raynald

2015-01-01

Due to its very low hardness and atomic number, pure lithium cannot be prepared by conventional methods prior to scanning electron microscopy analysis. Here, we report on the characterization of pure lithium metallic sheets used as base electrodes in the lithium-ion battery technology using electron backscatter diffraction (EBSD) and X-ray microanalysis using energy dispersive spectroscopy (EDS) after the sheet surface was polished by broad argon ion milling (IM). No grinding and polishing were necessary to achieve the sufficiently damage free necessary for surface analysis. Based on EDS results the impurities could be characterized and EBSD revealed the microsctructure and microtexture of this material with accuracy. The beam damage and oxidation/hydration resulting from the intensive use of IM and the transfer of the sample into the microscope chamber was estimated to be <50 nm. Despite the fact that the IM process generates an increase of temperature at the specimen surface, it was assumed that the milling parameters were sufficient to minimize the heating effect on the surface temperature. However, a cryo-stage should be used if available during milling to guaranty a heating artefact free surface after the milling process. © 2014 Wiley Periodicals, Inc.

Two-dimensional strain-mapping by electron backscatter diffraction and confocal Raman spectroscopy

NASA Astrophysics Data System (ADS)

Gayle, Andrew J.; Friedman, Lawrence H.; Beams, Ryan; Bush, Brian G.; Gerbig, Yvonne B.; Michaels, Chris A.; Vaudin, Mark D.; Cook, Robert F.

2017-11-01

The strain field surrounding a spherical indentation in silicon is mapped in two dimensions (2-D) using electron backscatter diffraction (EBSD) cross-correlation and confocal Raman spectroscopy techniques. The 200 mN indentation created a 4 μm diameter residual contact impression in the silicon (001) surface. Maps about 50 μm × 50 μm area with 128 pixels × 128 pixels were generated in several hours, extending, by comparison, assessment of the accuracy of both techniques to mapping multiaxial strain states in 2-D. EBSD measurements showed a residual strain field dominated by in-surface normal and shear strains, with alternating tensile and compressive lobes extending about three to four indentation diameters from the contact and exhibiting two-fold symmetry. Raman measurements showed a residual Raman shift field, dominated by positive shifts, also extending about three to four indentation diameters from the contact but exhibiting four-fold symmetry. The 2-D EBSD results, in combination with a mechanical-spectroscopic analysis, were used to successfully predict the 2-D Raman shift map in scale, symmetry, and shift magnitude. Both techniques should be useful in enhancing the reliability of microelectromechanical systems (MEMS) through identification of the 2-D strain fields in MEMS devices.

Relationships Between the Phase Transformation Kinetics, Texture Evolution, and Microstructure Development in a 304L Stainless Steel Under Biaxial Loading Conditions: Synchrotron X-ray and Electron Backscatter Diffraction Studies

DOE PAGES

Cakmak, Ercan; Choo, Hahn; Kang, Jun-Yun; ...

2015-02-11

Here we report that the relationships between the martensitic phase transformation kinetics, texture evolution, and the microstructure development in the parent austenite phase were studied for a 304L stainless steel that exhibits the transformation-induced plasticity effect under biaxial loading conditions at ambient temperature. The applied loading paths included: pure torsion, simultaneous biaxial torsion/tension, simultaneous biaxial torsion/compression, and stepwise loading of tension followed by torsion (i.e., first loading by uniaxial tension and then by pure torsion in sequence). Synchrotron X-ray and electron backscatter diffraction techniques were used to measure the evolution of the phase fractions, textures, and microstructures as a functionmore » of the applied strains. The influence of loading character and path on the changes in martensitic phase transformation kinetics is discussed in the context of (1) texture-transformation relationship and the preferred transformation of grains belonging to certain texture components over the others, (2) effects of axial strains on shear band evolutions, and (3) volume changes associated with martensitic transformation.« less

In situ electron backscatter diffraction investigation of recrystallization in a copper wire.

PubMed

Brisset, François; Helbert, Anne-Laure; Baudin, Thierry

2013-08-01

The microstructural evolution of a cold drawn copper wire (reduction area of 38%) during primary recrystallization and grain growth was observed in situ by electron backscatter diffraction. Two thermal treatments were performed, and successive scans were acquired on samples undergoing heating from ambient temperature to a steady state of 200°C or 215°C. During a third in situ annealing, the temperature was continuously increased up to 600°C. Nuclei were observed to grow at the expense of the deformed microstructure. This growth was enhanced by the high stored energy difference between the nuclei and their neighbors (driving energy in recrystallization) and by the presence of high-angle grain boundaries of high mobility. In the early stages of growth, the nuclei twin and the newly created orientations continue to grow to the detriment of the strained copper. At high temperatures, the disappearance of some twins was evidenced by the migration of the incoherent twin boundaries. Thermal grooving of grain boundaries is observed at these high temperatures and affects the high mobile boundaries but tends to preserve the twin boundaries of lower energy. Thus, grooving may contribute to the twin vanishing.

On capturing the grain-scale elastic and plastic anisotropy of alpha-Ti with spherical nanoindentation and electron back-scattered diffraction

DOE PAGES

Weaver, Jordan S.; Priddy, Matthew W.; McDowell, David L.; ...

2016-09-01

Here, spherical nanoindentation combined with electron back-scattered diffraction has been employed to characterize the grain-scale elastic and plastic anisotropy of single crystal alpha-Ti of two different compositions (in two different titanium alloys). Data analyses protocols needed to reliably extract the desired properties of interest are extended and demonstrated in this paper. Specifically, the grain-scale mechanical response is extracted in the form of indentation stress-strain curves for commercially pure (CP-Ti) alpha-Ti and alloyed (Ti-64) titanium from measurements on polycrystalline samples. The results are compared with responses of single crystals and nanoindentation tests (hardness and modulus) from the literature, and the measuredmore » indentation moduli are validated using crystal-elastic finite element simulations. The results obtained in this study show that (i) it is possible to characterize reliably the elastic and plastic anisotropy of alpha-Ti (hcp) of varying alloying contents with spherical nanoindentation stress-strain curves, (ii) the indentation modulus of alpha-Ti-64 is 5–10% less than CP-Ti, and (iii) the indentation yield strength of alpha-Ti-64 is 50–80% higher than CP-Ti.« less

A Dictionary Approach to Electron Backscatter Diffraction Indexing.

PubMed

Chen, Yu H; Park, Se Un; Wei, Dennis; Newstadt, Greg; Jackson, Michael A; Simmons, Jeff P; De Graef, Marc; Hero, Alfred O

2015-06-01

We propose a framework for indexing of grain and subgrain structures in electron backscatter diffraction patterns of polycrystalline materials. We discretize the domain of a dynamical forward model onto a dense grid of orientations, producing a dictionary of patterns. For each measured pattern, we identify the most similar patterns in the dictionary, and identify boundaries, detect anomalies, and index crystal orientations. The statistical distribution of these closest matches is used in an unsupervised binary decision tree (DT) classifier to identify grain boundaries and anomalous regions. The DT classifies a pattern as an anomaly if it has an abnormally low similarity to any pattern in the dictionary. It classifies a pixel as being near a grain boundary if the highly ranked patterns in the dictionary differ significantly over the pixel's neighborhood. Indexing is accomplished by computing the mean orientation of the closest matches to each pattern. The mean orientation is estimated using a maximum likelihood approach that models the orientation distribution as a mixture of Von Mises-Fisher distributions over the quaternionic three sphere. The proposed dictionary matching approach permits segmentation, anomaly detection, and indexing to be performed in a unified manner with the additional benefit of uncertainty quantification.

An electron back-scattered diffraction study on the microstructure evolution of severely deformed aluminum AI6061 alloy

NASA Astrophysics Data System (ADS)

Vaseghi, M.; Karimi Taheri, A.; Kim, H. S.

2014-08-01

In this paper dynamic strain ageing behavior in an Al-Mg-Si alloy related to equal channel angular pressing (ECAP) was investigated. In order to examine the combined plastic deformation and ageing effects on microstructure evolutions and strengthening characteristics, the Al6061 alloy were subjected to phi=90° ECAP die for up to 4 passes via route Bc at high temperatures. For investigating the effects of ageing temperature and strain rate in ECAP, Vickers hardness tests were performed. The combination of the ECAP process with dynamic ageing at higher temperatures resulted in a significant increase in hardness. The microstructural evolution of the samples was studied using electron back-scattering diffraction (EBSD). The grains of Al6061 aluminum alloy were refined significantly at 100 and 150 °C with greater pass numbers and the distributions of grain size tended to be more uniform with pass number increasing. Frequency of sub-boundaries and low angle grain boundaries (LAGBs) increased at initial stage of deformation, and sub-boundaries and LAGBs evolved into highangle grain boundaries (HAGBs) with further deformation, which resulted in the high frequency of HAGBs in the alloy after ECAP 4 passes.

Electron back-scattered diffraction and nanoindentation analysis of nanostructured Al tubes processed by multipass tubular-channel angular pressing

NASA Astrophysics Data System (ADS)

Mesbah, Mohsen; Faraji, Ghader; Bushroa, A. R.

2016-03-01

Microstructural evolution and mechanical properties of nanostructured 1060 aluminum alloy tubes processed by tubular-channel angular pressing (TCAP) process were investigated using electron back-scattered diffraction (EBSD), transmission electron microscopy (TEM) and nanoindentation analyzes. EBSD scans revealed a homogeneous ultrafine grained microstructure after the third passes of the TCAP process. Apart from that the mean grain sizes of the TCAP processed tubes were refined to 566 nm, 500 nm and 480 nm respectively after the first, second and third passes. The results showed that after the three TCAP passes, the grain boundaries with a high angle comprised 78% of all the boundaries. This is in comparison to the first pass processed sample that includes approximately 20% HAGBs. The TEM inspection afforded an appreciation of the role of very low-angle misorientation boundaries in the process of refining microstructure. Nanoindentation results showed that hardness was the smallest form of an unprocessed sample while the largest form of the processed sample after the three passes of TCAP indicated the highest resistant of the material. In addition, the module of elasticity of the TCAP processed samples was greater from that of the unprocessed sample.

Energy-weighted dynamical scattering simulations of electron diffraction modalities in the scanning electron microscope.

PubMed

Pascal, Elena; Singh, Saransh; Callahan, Patrick G; Hourahine, Ben; Trager-Cowan, Carol; Graef, Marc De

2018-04-01

Transmission Kikuchi diffraction (TKD) has been gaining momentum as a high resolution alternative to electron back-scattered diffraction (EBSD), adding to the existing electron diffraction modalities in the scanning electron microscope (SEM). The image simulation of any of these measurement techniques requires an energy dependent diffraction model for which, in turn, knowledge of electron energies and diffraction distances distributions is required. We identify the sample-detector geometry and the effect of inelastic events on the diffracting electron beam as the important factors to be considered when predicting these distributions. However, tractable models taking into account inelastic scattering explicitly are lacking. In this study, we expand the Monte Carlo (MC) energy-weighting dynamical simulations models used for EBSD [1] and ECP [2] to the TKD case. We show that the foil thickness in TKD can be used as a means of energy filtering and compare band sharpness in the different modalities. The current model is shown to correctly predict TKD patterns and, through the dictionary indexing approach, to produce higher quality indexed TKD maps than conventional Hough transform approach, especially close to grain boundaries. Copyright © 2018 The Authors. Published by Elsevier B.V. All rights reserved.

Microplastic Deformation of Submicrocrystalline Copper at Room and Elevated Temperatures

NASA Astrophysics Data System (ADS)

Dudarev, E. F.; Pochivalova, G. P.; Tabachenko, A. N.; Maletkina, T. Yu.; Skosyrskii, A. B.; Osipov, D. A.

2017-02-01

of investigations of submicrocrystalline copper subjected to cold rolling after abc pressing by methods of backscatter electron diffraction and x-ray diffraction analysis are presented. It is demonstrated that after such combined intensive plastic deformation, the submicrocrystalline structure with average grain-subgrain structure elements having sizes of 0.63 μm is formed with relative fraction of high-angle grain boundaries of 70% with texture typical for rolled copper. Results of investigation of microplastic deformation of copper with such structure at temperatures in the interval 295-473 K and with submicrocrystalline structure formed by cold rolling of coarse-grained copper are presented.

Secret in the Margins: Rutherford's Gold Foil Experiment

ERIC Educational Resources Information Center

Aydin, Sevgi; Hanuscin, Deborah L.

2011-01-01

In this article, the authors describe a lesson that uses the 5E Learning Cycle to help students not only understand the atomic model but also how Ernest Rutherford helped develop it. The lesson uses Rutherford's gold foil experiment to focus on three aspects of the nature of science: the empirical nature of science, the tentativeness of scientific…

Use of surrogate technologies to estimate suspended sediment in the Clearwater River, Idaho, and Snake River, Washington, 2008-10

USGS Publications Warehouse

Wood, Molly S.; Teasdale, Gregg N.

2013-01-01

Elevated levels of fluvial sediment can reduce the biological productivity of aquatic systems, impair freshwater quality, decrease reservoir storage capacity, and decrease the capacity of hydraulic structures. The need to measure fluvial sediment has led to the development of sediment surrogate technologies, particularly in locations where streamflow alone is not a good estimator of sediment load because of regulated flow, load hysteresis, episodic sediment sources, and non-equilibrium sediment transport. An effective surrogate technology is low maintenance and sturdy over a range of hydrologic conditions, and measured variables can be modeled to estimate suspended-sediment concentration (SSC), load, and duration of elevated levels on a real-time basis. Among the most promising techniques is the measurement of acoustic backscatter strength using acoustic Doppler velocity meters (ADVMs) deployed in rivers. The U.S. Geological Survey, in cooperation with the U.S. Army Corps of Engineers, Walla Walla District, evaluated the use of acoustic backscatter, turbidity, laser diffraction, and streamflow as surrogates for estimating real-time SSC and loads in the Clearwater and Snake Rivers, which adjoin in Lewiston, Idaho, and flow into Lower Granite Reservoir. The study was conducted from May 2008 to September 2010 and is part of the U.S. Army Corps of Engineers Lower Snake River Programmatic Sediment Management Plan to identify and manage sediment sources in basins draining into lower Snake River reservoirs. Commercially available acoustic instruments have shown great promise in sediment surrogate studies because they require little maintenance and measure profiles of the surrogate parameter across a sampling volume rather than at a single point. The strength of acoustic backscatter theoretically increases as more particles are suspended in the water to reflect the acoustic pulse emitted by the ADVM. ADVMs of different frequencies (0.5, 1.5, and 3 Megahertz) were tested to target various sediment grain sizes. Laser diffraction and turbidity also were tested as surrogate technologies. Models between SSC and surrogate variables were developed using ordinary least-squares regression. Acoustic backscatter using the high frequency ADVM at each site was the best predictor of sediment, explaining 93 and 92 percent of the variability in SSC and matching sediment sample data within +8.6 and +10 percent, on average, at the Clearwater River and Snake River study sites, respectively. Additional surrogate models were developed to estimate sand and fines fractions of suspended sediment based on acoustic backscatter. Acoustic backscatter generally appears to be a better estimator of suspended sediment concentration and load over short (storm event and monthly) and long (annual) time scales than transport curves derived solely from the regression of conventional sediment measurements and streamflow. Changing grain sizes, the presence of organic matter, and aggregation of sediments in the river likely introduce some variability in the model between acoustic backscatter and SSC.

A hybrid asymptotic-modal analysis of the EM scattering by an open-ended S-shaped rectangular waveguide cavity

NASA Technical Reports Server (NTRS)

Law, P. H.; Burkholder, R. J.; Pathak, P. H.

1988-01-01

The electromagnetic fields (EM) backscatter from a 3-dimensional perfectly conducting S-shaped open-ended cavity with a planar interior termination is analyzed when it is illuminated by an external plane wave. The analysis is based on a self-consistent multiple scattering method which accounts for the multiple wave interactions between the open end and the interior termination. The scattering matrices which described the reflection and transmission coefficients of the waveguide modes reflected and transmitted at each junction between the different waveguide sections, as well at the scattering from the edges at the open end are found via asymptotic high frequency methods such as the geometrical and physical theories of diffraction used in conjunction with the equivalent current method. The numerical results for an S-shaped inlet cavity are compared with the backscatter from a straight inlet cavity; the backscattered patterns are different because the curvature of an S-shaped inlet cavity redistributes the energy reflected from the interior termination in a way that is different from a straight inlet cavity.

Short communication on Kinetics of grain growth and particle pinning in U-10 wt.% Mo

NASA Astrophysics Data System (ADS)

Frazier, William E.; Hu, Shenyang; Overman, Nicole; Lavender, Curt; Joshi, Vineet V.

2018-01-01

The alloy U-10 wt% Mo was annealed at temperatures ranging from 700 °C to 900 °C for periods lasting up to 24 h. Annealed microstructures were examined using Electron Backscattered Diffraction (EBSD) to obtain average grain sizes and grain size distributions. From the temporal evolution of the average grain size, the activation energy of grain growth was determined to be 172.4 ± 0.961 kJ/mol. Grain growth over the annealing period stagnated after a period of 1-4 h. This stagnation is apparently caused by the pinning effect of second-phase particles in the materials. Back-scattered electron imaging (BSE) was used to confirm that these particles do not appreciably coarsen or dissolve during annealing at the aforementioned temperatures.

Rutherford's Nuclear Model

NASA Astrophysics Data System (ADS)

Heibron, John

2011-04-01

Rutherford's nuclear model originally was a theory of scattering that represented both the incoming alpha particles and their targets as point charges. The assumption that the apha particle, which Rutherford knew to be a doubly ionized helium atom, was a bare nucleus, and the associated assumption that the electronic structure of the atom played no significant role in large-angle scattering, had immediate and profound consequences well beyond the special problem for which Rutherford introduced them. The group around him in Manchester in 1911/12, which included Niels Bohr, Charles Darwin, Georg von Hevesy, and Henry Moseley, worked out some of these consequences. Their elucidation of radioactivity, isotopy, atomic number, and quantization marked an epoch in microphysics. Rutherford's nuclear model was exemplary not only for its fertility and picturability, but also for its radical simplicity. The lecturer will not undertake to answer the baffling question why such simple models work.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sicupira, Felipe Lucas; Sandim, Maria José R.; Sandim, Hugo R.Z.

The good performance of supermartensitic stainless steels is strongly dependent on the volume fraction of retained austenite at room temperature. The present work investigates the effect of secondary tempering temperatures on this phase transformation and quantifies the amount of retained austenite by X-ray diffraction and saturation magnetization. The steel samples were tempered for 1 h within a temperature range of 600–800 °C. The microstructure was characterized using scanning electron microscopy and electron backscatter diffraction. Results show that the amount of retained austenite decreased with increasing secondary tempering temperature in both quantification methods. - Highlights: • The phase transformation during secondarymore » tempering temperatures was observed. • Phases were quantified by X-ray diffraction and DC-saturation magnetization. • More retained austenite forms with increasing secondary tempering temperature. • The retained austenite is mainly located at the grain and lath boundaries.« less

Electron gun with a transmission photocathode for the Joint Institute for Nuclear Research photoinjector

NASA Astrophysics Data System (ADS)

Balalykin, N. I.; Minashkin, V. F.; Nozdrin, M. A.; Shirkov, G. D.; Zelenogorskii, V. V.; Gacheva, E. I.; Potemkin, A. K.; Huran, J.

2017-10-01

Photocathode electron guns are key to the generation of high-quality electron bunches, which are currently the primary source of electrons for linear electron accelerators. The photogun test bench built at the Joint Institute for Nuclear Research (JINR) is currently being used to further develop the hollow (backside irradiated) photocathode concept. A major achievement was the replacement of the hollow photocathode by a technologically more feasible transmission photocathode made from a metal mesh that serves as a substrate for films of various photomaterials. A number of thin-film cathodes on quartz glass substrates are fabricated by photolithography. The vectorial photoeffect (related to the surface-normal component of the wave electric field) is observed and found to significantly affect the quantum efficiency. The dependence of the quantum efficiency of diamond-like carbon photocathodes on the manufacturing technology is investigated. The Rutherford backscattering and elastic recoil detection techniques are combined to carry out an elemental analysis of the films. An estimate of the emittance of a 400 pC electron beam is obtained using the cross-section method.

Microwave remote plasma enhanced-atomic layer deposition system with multicusp confinement chamber

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dechana, A.; Thamboon, P.; Boonyawan, D., E-mail: dheerawan.b@cmu.ac.th

A microwave remote Plasma Enhanced-Atomic Layer Deposition system with multicusp confinement chamber is established at the Plasma and Beam Physics research facilities, Chiang Mai, Thailand. The system produces highly-reactive plasma species in order to enhance the deposition process of thin films. The addition of the multicusp magnetic fields further improves the plasma density and uniformity in the reaction chamber. Thus, the system is more favorable to temperature-sensitive substrates when heating becomes unwanted. Furthermore, the remote-plasma feature, which is generated via microwave power source, offers tunability of the plasma properties separately from the process. As a result, the system provides highmore » flexibility in choice of materials and design experiments, particularly for low-temperature applications. Performance evaluations of the system were carried on coating experiments of Al{sub 2}O{sub 3} layers onto a silicon wafer. The plasma characteristics in the chamber will be described. The resulted Al{sub 2}O{sub 3} films—analyzed by Rutherford Backscattering Spectrometry in channeling mode and by X-ray Photoelectron Spectroscopy techniques—will be discussed.« less

Comparison of monomode KTiOPO4 waveguide formed by C3+ ion implantation and Rb+ ion exchange

NASA Astrophysics Data System (ADS)

Cui, Xiao-Jun; Wang, Liang-Ling

2017-02-01

In this work, we report on the formation and characterization of monomode KTiOPO4 waveguide at 1539 nm by 6.0 MeV C3+ ion implantation with the dose of 2×1015 ions/cm2 and Rb+-K+ ion exchange, respectively. The relative intensity of light as a function of effective refractive index of TM modes at 633 nm and 1539 nm for KTiOPO4 waveguide formed by two different methods were compared with the prism coupling technique. The refractive index (nz) profile for the ion implanted waveguide was reconstructed by reflectivity calculation method, and one for the ion exchanged waveguide was by inverse Wentzel-Kramers-Brillouin. The nuclear energy loss versus penetration depth of the C3+ ions implantation into KTiOPO4 was simulated using the Stopping Range of Ions in Matter software. The Rutherford Backscattering Spectrometry spectrum of KTiOPO4 waveguide was analyzed after ions exchanged. The results showed that monomode waveguide at 1539 nm can be formed by ion implantation and Rb+ -K+ ion exchange, respectively.

Synergistically-enhanced ion track formation in pre-damaged strontium titanate by energetic heavy ions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xue, Haizhou; Zarkadoula, Eva; Sachan, Ritesh

Latent ion tracks created by energetic heavy ions (12 MeV Ti to 946 MeV Au) in single crystal SrTiO 3 are investigated in this paper using Rutherford backscattering spectrometry and scanning transmission electron microscopy. The results demonstrate that pre-existing irradiation damage, introduced via elastic collision processes, interacts synergistically with the electronic energy deposition from energetic heavy ions to enhance formation of latent ion tracks. The average amorphous cross-section increases with the level of pre-damage and is linearly proportional to the electronic energy loss of the ions, with a slope dependent on the pre-damage level. For the highest energy ions (629more » MeV Xe and 946 MeV Au), the tracks are continuous over the pre-damaged depth, but become discontinuous beyond the pre-damaged region. Finally, this work provides new understanding and insights on ion-solid interactions that significantly impact the interpretation of latent track formation processes, models of amorphization, and the fabrication of electro-ceramic devices.« less

In situ measurement of low-Z material coating thickness on high Z substrate for tokamaks.

PubMed

Mueller, D; Roquemore, A L; Jaworski, M; Skinner, C H; Miller, J; Creely, A; Raman, P; Ruzic, D

2014-11-01

Rutherford backscattering of energetic particles can be used to determine the thickness of a coating of a low-Z material over a heavier substrate. Simulations indicate that 5 MeV alpha particles from an (241)Am source can be used to measure the thickness of a Li coating on Mo tiles between 0.5 and 15 μm thick. Using a 0.1 mCi source, a thickness measurement can be accomplished in 2 h of counting. This technique could be used to measure any thin, low-Z material coating (up to 1 mg/cm(2) thick) on a high-Z substrate, such as Be on W, B on Mo, or Li on Mo. By inserting a source and detector on a moveable probe, this technique could be used to provide an in situ measurement of the thickness of Li coating on NSTX-U Mo tiles. A test stand with an alpha source and an annular solid-state detector was used to investigate the measurable range of low-Z material thicknesses on Mo tiles.

Optical activity and defect/dopant evolution in ZnO implanted with Er

DOE Office of Scientific and Technical Information (OSTI.GOV)

Azarov, Alexander; Galeckas, Augustinas; Kuznetsov, Andrej

2015-09-28

The effects of annealing on the optical properties and defect/dopant evolution in wurtzite (0001) ZnO single crystals implanted with Er ions are studied using a combination of Rutherford backscattering/channeling spectrometry and photoluminescence measurements. The results suggest a lattice recovery behavior dependent on ion dose and involving formation/evolution of an anomalous multipeak defect distribution, thermal stability of optically active Er complexes, and Er outdiffusion. An intermediate defect band occurring between the surface and ion-induced defects in the bulk is stable up to 900 °C and has a photoluminescence signature around 420 nm well corresponding to Zn interstitials. The optical activity of the Ermore » atoms reaches a maximum after annealing at 700 °C but is not directly associated to the ideal Zn site configuration, since the Er substitutional fraction is maximal already in the as-implanted state. In its turn, annealing at temperatures above 700 °C leads to dissociation of the optically active Er complexes with subsequent outdiffusion of Er accompanied by the efficient lattice recovery.« less

Ternary AlGaN Alloys with High Al Content and Enhanced Compositional Homogeneity Grown by Plasma-Assisted Molecular Beam Epitaxy

NASA Astrophysics Data System (ADS)

Fellmann, Vincent; Jaffrennou, Périne; Sam-Giao, Diane; Gayral, Bruno; Lorenz, Katharina; Alves, Eduardo; Daudin, Bruno

2011-03-01

We have studied the influence of III/N flux ratio and growth temperature on structural and optical properties of high Al-content, around 50-60%, AlGaN alloy layers grown by plasma-assisted molecular beam epitaxy. In a first part, based on structural analysis by Rutherford Backscattering Spectroscopy, we establish that a III/N flux ratio slightly above 1 produces layers with low amount of structural defects. In a second part, we study the effect of growth temperature on structural and optical properties of layers grown with previously determined optimal III/N flux ratio. We find that optimal growth temperatures for Al0.50Ga0.50N layers with compositional homogeneity related with narrow UV photoluminescence properties are in the low temperature range for growing GaN layers, i.e., 650-680 °C. We propose that lowering Ga adatom diffusion on the surface favors random incorporation of both Ga and Al adatoms on wurtzite crystallographic sites leading to the formation of an homogeneous alloy.

Studies of O18 impurity trapping at interstitial dislocation loops in ion implanted Fe (1 1 0) by ion channeling and ab initio calculations

NASA Astrophysics Data System (ADS)

Mathayan, Vairavel; Kothalamuthu, Saravanan; Gnanasekaran, Jaiganesh; Balakrishnan, Sundaravel; Panigrahi, Binaykumar

2018-01-01

The O18 and self ions are implanted at same depth in Fe (1 1 0) crystal and annealed to study the oxygen trapping under excess self interstitial defects. Rutherford backscattering spectrometry, nuclear reaction analysis and channeling measurements have been performed to determine the lattice site position of O18. The presence of dislocation loops is confirmed by energy-dependent dechanneling parameter measurements. From the tilt angular scans of Fe and O18 signals along 〈1 0 0〉, 〈1 1 0〉 axes, O18 is found to be displaced 0.2 Å from tetrahedral towards octahedral interstitial site in O18. Similar lattice site location of oxygen with the displacement of 0.37 Å is predicted by density functional theory calculations for the interaction of oxygen with 〈1 0 0〉 interstitial dislocation loop structure. Our results provide strong evidence on oxygen trapping at interstitial dislocation loops in the presence of excess interstitial defects in iron.

Composition and optical properties tunability of hydrogenated silicon carbonitride thin films deposited by reactive magnetron sputtering

NASA Astrophysics Data System (ADS)

Bachar, A.; Bousquet, A.; Mehdi, H.; Monier, G.; Robert-Goumet, C.; Thomas, L.; Belmahi, M.; Goullet, A.; Sauvage, T.; Tomasella, E.

2018-06-01

Radiofrequency reactive magnetron sputtering was used to deposit hydrogenated amorphous silicon carbonitride (a-SiCxNy:H) at 400 °C by sputtering a silicon target under CH4 and N2 reactive gas mixture. Rutherford backscattering spectrometry revealed that the change of reactive gases flow rate (the ratio R = FN2/(FN2+FCH4)) induced a smooth chemical composition tunability from a silicon carbide-like film for R = 0 to a silicon nitride-like one at R = 1 with a large area of silicon carbonitrides between the two regions. The deconvolution of Fourier Transform InfraRed and X-ray photoelectron spectroscopy spectrum highlighted a shift of the chemical environment of the deposited films corresponding to the changes seen by RBS. The consequence of these observations is that a control of refractive index in the range of [1.9-2.5] at λ = 633 nm and optical bandgap in the range [2 eV-3.8 eV] have been obtained which induces that these coatings can be used as antireflective coatings in silicon photovoltaic cells.

The Effect of Ag and Ag+N Ion Implantation on Cell Attachment Properties

DOE Office of Scientific and Technical Information (OSTI.GOV)

Urkac, Emel Sokullu; Oztarhan, Ahmet; Gurhan, Ismet Deliloglu

2009-03-10

Implanted biomedical prosthetic devices are intended to perform safely, reliably and effectively in the human body thus the materials used for orthopedic devices should have good biocompatibility. Ultra High Molecular Weight Poly Ethylene (UHMWPE) has been commonly used for total hip joint replacement because of its very good properties. In this work, UHMWPE samples were Ag and Ag+N ion implanted by using the Metal-Vapor Vacuum Arc (MEVVA) ion implantation technique. Samples were implanted with a fluency of 1017 ion/cm2 and extraction voltage of 30 kV. Rutherford Backscattering Spectrometry (RBS) was used for surface studies. RBS showed the presence of Agmore » and N on the surface. Cell attachment properties investigated with model cell lines (L929 mouse fibroblasts) to demonstrate that the effect of Ag and Ag+N ion implantation can favorably influence the surface of UHMWPE for biomedical applications. Scanning electron microscopy (SEM) was used to demonstrate the cell attachment on the surface. Study has shown that Ag+N ion implantation represents more effective cell attachment properties on the UHMWPE surfaces.« less

The interaction of atomic oxygen with thin copper films

NASA Technical Reports Server (NTRS)

Gibson, B. C.; Williams, J. R.; Fromhold, A. T., Jr.; Bozack, M. J.; Neely, W. C.; Whitaker, Ann F.

1992-01-01

A source of thermal, ground-state atomic oxygen has been used to expose thin copper films at a flux of 1.4 x 10 exp 17 atoms/sq cm s for times up to 50 min for each of five temperatures between 140 and 200 C. Rutherford backscattering spectroscopy was used to characterize the oxide formed during exposure. The observations are consistent with the oxide phase Cu2O. The time dependence and the temperature dependence of the oxide layer thickness can be described using oxide film growth theory based on rate limitation by diffusion. Within the time and temperature ranges of this study, the growth of the oxide layers is well described by the equation L(T,t) = 3.6 x 10 to 8th exp(- 1.1/2k sub B T)t exp 1/2, where L,T, and t are measured in angstroms, degrees Kelvin, and minutes, respectively. The deduced activation energy is 1.10 +/- 0.15 eV, with the attendant oxidation rate being greater than that for the corresponding reaction in molecular oxygen.

Characterization of a SiC MIS Schottky diode as RBS particle detector

NASA Astrophysics Data System (ADS)

Kaufmann, I. R.; Pick, A. C.; Pereira, M. B.; Boudinov, H. I.

2018-02-01

A 4H-SiC Schottky diode was investigated as a particle detector for Rutherford Backscattering Spectroscopy (RBS) experiment. The device was fabricated on a commercial 4H-SiC epitaxial n-type layer grown onto a 4H-SiC n+ type substrate wafer doped with nitrogen. Hafnium oxide with thickness of 1 nm was deposited by Atomic Layer Deposition and 10 nm of Ni were deposited by sputtering to form the Ni/HfO2/4H-SiC MIS Schottky structure. Current-Voltage curves with variable temperature were measured to extract the real Schottky Barrier Height (0.32 V) and ideality factor values (1.15). Reverse current and Capacitance-Voltage measurements were performed on the 4H-SiC detector and compared to a commercial Si barrier detector acquired from ORTEC. RBS data for four alpha energies (1, 1.5, 2 and 2.5 MeV) were collected from an Au/Si sample using the fabricated SiC and the commercial Si detectors simultaneously. The energy resolution for the fabricated detector was estimated to be between 75 and 80 keV.

Ag out-surface diffusion in crystalline SiC with an effective SiO 2 diffusion barrier

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xue, H.; Xiao, H. Y.; Zhu, Z.

2015-05-07

For applications of tristructural isotropic (TRISO) fuel particles in high temperature reactors, release of radioactive Ag isotope ( 110mAg) through the SiC coating layer is a safety concern. In order to understand the diffusion mechanism, Ag ion implantations near the surface and in the bulk were performed by utilizing different ion energies and energy-degrader foils. High temperature annealing was carried out on the as-irradiated samples to study the possible out-surface diffusion. Before and after annealing, Rutherford backscattering spectrometry (RBS) and secondary ion mass spectrometry (SIMS) measurements were employed to obtain the elemental profiles of the implanted samples. Our results suggestmore » little migration of buried Ag in the bulk, and an out-diffusion of the implanted Ag in the near-surface region of single crystal SiC. It is also found that a SiO 2 layer, which was formed during annealing, may serve as an effective barrier to reduce or prevent Ag out diffusion through the SiC coating layer.« less

Absence of single critical dose for the amorphization of quartz under ion irradiation

NASA Astrophysics Data System (ADS)

Zhang, S.; Pakarinen, O. H.; Backholm, M.; Djurabekova, F.; Nordlund, K.; Keinonen, J.; Wang, T. S.

2018-01-01

In this work, we first simulated the amorphization of crystalline quartz under 50 keV 23 Na ion irradiation with classical molecular dynamics (MD). We then used binary collision approximation algorithms to simulate the Rutherford backscattering spectrometry in channeling conditions (RBS-C) from these irradiated MD cells, and compared the RBS-C spectra with experiments. The simulated RBS-C results show an agreement with experiments in the evolution of amorphization as a function of dose, showing what appears to be (by this measure) full amorphization at about 2.2 eVṡatom-1 . We also applied other analysis methods, such as angular structure factor, Wigner-Seitz, coordination analysis and topological analysis, to analyze the structural evolution of the irradiated MD cells. The results show that the atomic-level structure of the sample keeps evolving after the RBS signal has saturated, until the dose of about 5 eVṡatom-1 . The continued evolution of the SiO2 structure makes the definition of what is, on the atomic level, an amorphized quartz ambiguous.

Direct synthesis of ultrathin SOI structure by extremely low-energy oxygen implantation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hoshino, Yasushi, E-mail: yhoshino@kanagawa-u.ac.jp; Yachida, Gosuke; Inoue, Kodai

2016-06-15

We performed extremely low-energy {sup 16}O{sup +} implantation at 10 keV (R{sub p} ∼ 25 nm) followed by annealing aiming at directly synthesizing an ultrathin Si layer separated by a buried SiO{sub 2} layer in Si(001) substrates, and then investigated feasible condition of recrystallization and stabilization of the superficial Si and the buried oxide layer by significantly low temperature annealing. The elemental compositions were analyzed by Rutherford backscattering (RBS) and secondary ion mass spectroscopy (SIMS). The crystallinity of the superficial Si layer was quantitatively confirmed by ananlyzing RBS-channeling spectra. Cross-sectional morphologies and atomic configurations were observed by transmission electron microscopemore » (TEM). As a result, we succeeded in directly synthesizing an ultrathin single-crystalline silicon layer with ≤20 nm thick separated by a thin buried stoichiometric SiO{sub 2} layer with ≤20 nm thick formed by extremely low-energy {sup 16}O{sup +} implantation followed by surprisingly low temperature annealing at 1050{sup ∘} C.« less

Influence of culture media on the physical and chemical properties of Ag-TiCN coatings

NASA Astrophysics Data System (ADS)

Carvalho, I.; Escobar Galindo, R.; Henriques, M.; Palacio, C.; Carvalho, S.

2014-08-01

The aim of this study was to verify the possible physical and chemical changes that may occur on the surface of Ag-TiCN coatings after exposure to the culture media used in microbiological and cytotoxic assays, respectively tryptic soy broth (TSB) and Dulbecco's modified eagle's medium (DMEM). After sample immersion for 24 h in the media, analyses were performed by glow discharge optical emission spectroscopy discharge radiation (GDOES), Rutherford backscattering spectroscopy (RBS) and x-ray photoelectron spectroscopy (XPS). The results of GDOES profile, RBS and XPS spectra, of samples immersed in TSB, demonstrated the formation of a thin layer of carbon, oxygen and nitrogen that could be due to the presence of proteins in TSB. After 24 h of immersion in DMEM, the results showed the formation of a thin layer of calcium phosphates on the surface, since the coatings displayed a highly oxidized surface in which calcium and phosphorus were detected. All these results suggested that the formation of a layer on the coating surface prevented the release of silver ions in concentrations that allow antibacterial activity.

Ag Out-surface Diffusion In Crystalline SiC With An Effective SiO2 Diffusion Barrier

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xue, H.; Xiao, Haiyan Y.; Zhu, Zihua

2015-09-01

For applications of tristructural isotropic (TRISO) fuel particles in high temperature reactors, release of radioactive Ag isotope (110mAg) through the SiC coating layer is a safety concern. To understand the diffusion mechanism, Ag ion implantations near the surface and in the bulk were performed by utilizing different ion energies and energy-degrader foils. High temperature annealing was carried out on the as-irradiated samples to study the possible out-surface diffusion. Before and after annealing, Rutherford backscattering spectrometry (RBS) and secondary ion mass spectrometry (SIMS) measurements were employed to obtain the elemental profiles of the implanted samples. The results suggest little migration ofmore » buried Ag in the bulk, and an out-diffusion of the implanted Ag in the near-surface region of single crystal SiC. It is also found that a SiO2 layer, which was formed during annealing, may serve as an effective barrier to reduce or prevent Ag out diffusion through the SiC coating layer.« less

Focused Heavy Ion Nuclear Microprobe facility at the University of North Texas

NASA Astrophysics Data System (ADS)

Guo, B. N.; Yang, C.; El Bouanani, M.; Duggan, J. L.; McDaniel, F. D.

1999-10-01

A Focused Heavy Ion Nuclear Microprobe facility has been constructed at the University of North Texas. The microprobe utilizes two separated Russian magnetic quadrupole quadruplets. The two identical magnetic quadrupole doublet lenses are separated by 2.61 meters. The lens system with ~ 80 times demagnification has the ability to focus proton, alpha particle, or heavier ions down to a spot size of ~ 1 μm. The microprobe components rest on a 7 meter steel beam support with vibration isolation. A computer provides control for the lens power supplies and also the parameters for a post-lens scanning coil to raster-scan the beam across the sample. Up to four detection channels can be used for simultaneous data acquisition under VME control. A RISC workstation is used to collect, display and analyze the data. The data is transferred via ethernet. A detailed description of the facility and data acquisition system along with preliminary testing results on TEM grids with Rutherford Backscattering Spectrometry and the Ion Beam Induced Charge Collection techniques will be presented.

Absence of single critical dose for the amorphization of quartz under ion irradiation.

PubMed

Zhang, S; Pakarinen, O H; Backholm, M; Djurabekova, F; Nordlund, K; Keinonen, J; Wang, T S

2018-01-10

In this work, we first simulated the amorphization of crystalline quartz under 50 keV [Formula: see text]Na ion irradiation with classical molecular dynamics (MD). We then used binary collision approximation algorithms to simulate the Rutherford backscattering spectrometry in channeling conditions (RBS-C) from these irradiated MD cells, and compared the RBS-C spectra with experiments. The simulated RBS-C results show an agreement with experiments in the evolution of amorphization as a function of dose, showing what appears to be (by this measure) full amorphization at about 2.2 eV⋅[Formula: see text]. We also applied other analysis methods, such as angular structure factor, Wigner-Seitz, coordination analysis and topological analysis, to analyze the structural evolution of the irradiated MD cells. The results show that the atomic-level structure of the sample keeps evolving after the RBS signal has saturated, until the dose of about 5 eV⋅[Formula: see text]. The continued evolution of the [Formula: see text] structure makes the definition of what is, on the atomic level, an amorphized quartz ambiguous.

Fabrication and characterization of carbon-backed thin 208Pb targets.

PubMed

Thakur, Meenu; Dubey, R; Abhilash, S R; Behera, B R; Mohanty, B P; Kabiraj, D; Ojha, Sunil; Duggal, Heena

2016-01-01

Thin carbon-backed isotopically enriched 208 Pb targets were required for our experiment aimed to study the reaction dynamics for 48 Ti +  208 Pb system, populating the near super-heavy nucleus 256 Rf, through mass-energy correlation of the fission fragments. Purity and thickness of the targets are of utmost importance in such studies as these factors have strong influence on the measurement accuracy of mass and energy distribution of fission fragments. 208 Pb targets with thickness ranging from 60 μg/cm 2 to 250 μg/cm 2 have been fabricated in high vacuum environment using physical vapor deposition method. Important points in the method are as follows: • 208 Pb was deposited using resistive heating method, whereas carbon (backing foil) deposition was performed by using the electron beam bombardment technique.•Different characterization techniques such as Particle Induced X-ray Emission (PIXE), Energy Dispersive X-Ray Fluorescence (EDXRF) and Rutherford Backscattering Spectrometry (RBS) were used to assert the purity and thickness of the targets.•These targets have successfully been used to accomplish our experimental objectives.

Visible photoluminescence of porous Si(1-x)Ge(x) obtained by stain etching

NASA Technical Reports Server (NTRS)

Ksendzov, A.; Fathauer, R. W.; George, T.; Pike, W. T.; Vasquez, R. P.; Taylor, A. P.

1993-01-01

We have investigated visible photoluminescence (PL) from thin porous Si(1-x)Ge(x) alloy layers prepared by stain etching of molecular-beam-epitaxy-grown material. Seven samples with nominal Ge fraction x varying from 0.04 to 0.41 were studied at room temperature and 80 K. Samples of bulk stain etched Si and Ge were also investigated. The composition of the porous material was determined using X-ray photoemission spectroscopy and Rutherford backscattering techniques to be considerably more Ge-rich than the starting epitaxial layers. While the luminescence intensity drops significantly with the increasing Ge fraction, we observe no significant variation in the PL wavelength at room temperature. This is clearly in contradiction to the popular model based on quantum confinement in crystalline silicon which predicts that the PL energy should follow the bandgap variation of the starting material. However, our data are consistent with small active units containing only a few Si atoms that are responsible for the light emission. Such units are present in many compounds proposed in the literature as the cause of the visible PL in porous Si.

Atomic layer deposition of molybdenum oxide from (N{sup t}Bu){sub 2}(NMe{sub 2}){sub 2}Mo and O{sub 2} plasma

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vos, Martijn F. J.; Macco, Bart; Thissen, Nick F. W.

2016-01-15

Molybdenum oxide (MoO{sub x}) films have been deposited by atomic layer deposition using bis(tert-butylimido)-bis(dimethylamido)molybdenum and oxygen plasma, within a temperature range of 50–350 °C. Amorphous film growth was observed between 50 and 200 °C at a growth per cycle (GPC) around 0.80 Å. For deposition temperatures of 250 °C and higher, a transition to polycrystalline growth was observed, accompanied by an increase in GPC up to 1.88 Å. For all deposition temperatures the O/Mo ratio was found to be just below three, indicating the films were slightly substoichiometric with respect to MoO{sub 3} and contained oxygen vacancies. The high purity of the films was demonstratedmore » in the absence of detectable C and N contamination in Rutherford backscattering measurements, and a H content varying between 3 and 11 at. % measured with elastic recoil detection. In addition to the chemical composition, the optical properties are reported as well.« less

Ionization cross sections of the Au L subshells by electron impact from the L3 threshold to 100 keV

NASA Astrophysics Data System (ADS)

Barros, Suelen F.; Vanin, Vito R.; Maidana, Nora L.; Martins, Marcos N.; García-Alvarez, Juan A.; Santos, Osvaldo C. B.; Rodrigues, Cleber L.; Koskinas, Marina F.; Fernández-Varea, José M.

2018-01-01

We measured the cross sections for Au Lα, Lβ, Lγ, Lℓ and Lη x-ray production by the impact of electrons with energies from the L3 threshold to 100 keV using a thin Au film whose mass thickness was determined by Rutherford Backscattering Spectrometry. The x-ray spectra were acquired with a Si drift detector, which allowed to separate the components of the Lγ multiplet lines. The measured Lα, Lβ, {{L}}{γ }1, L{γ }{2,3,6}, {{L}}{γ }{4,4\\prime }, {{L}}{γ }5, {{L}}{\\ell } and Lη x-ray production cross sections were then employed to derive Au L1, L2 and L3 subshell ionization cross sections with relative uncertainties of 8%, 7% and 7%, respectively; these figures include the uncertainties in the atomic relaxation parameters. The correction for the increase in electron path length inside the Au film was estimated by means of Monte Carlo simulations. The experimental ionization cross sections are about 10% above the state-of-the-art distorted-wave calculations.

SAXS investigations of the morphology of swift heavy ion tracks in α-quartz.

PubMed

Afra, B; Rodriguez, M D; Trautmann, C; Pakarinen, O H; Djurabekova, F; Nordlund, K; Bierschenk, T; Giulian, R; Ridgway, M C; Rizza, G; Kirby, N; Toulemonde, M; Kluth, P

2013-01-30

The morphology of swift heavy ion tracks in crystalline α-quartz was investigated using small angle x-ray scattering (SAXS), molecular dynamics (MD) simulations and transmission electron microscopy. Tracks were generated by irradiation with heavy ions with energies between 27 MeV and 2.2 GeV. The analysis of the SAXS data indicates a density change of the tracks of ~2 ± 1% compared to the surrounding quartz matrix for all irradiation conditions. The track radii only show a weak dependence on the electronic energy loss at values above 17 keV nm(-1), in contrast to values previously reported from Rutherford backscattering spectrometry measurements and expectations from the inelastic thermal spike model. The MD simulations are in good agreement at low energy losses, yet predict larger radii than SAXS at high ion energies. The observed discrepancies are discussed with respect to the formation of a defective halo around an amorphous track core, the existence of high stresses and/or the possible presence of a boiling phase in quartz predicted by the inelastic thermal spike model.

Undergraduate Research and Training in Ion-Beam Analysis of Environmental Materials

NASA Astrophysics Data System (ADS)

Vineyard, Michael F.; Chalise, Sajju; Clark, Morgan L.; LaBrake, Scott M.; McCalmont, Andrew M.; McGuire, Brendan C.; Mendez, Iseinie I.; Watson, Heather C.; Yoskowitz, Joshua T.

We have an active undergraduate research program at the Union College Ion-Beam Analysis Laboratory (UCIBAL) focused on the study of environmental materials. Accelerator-based ion-beam analysis (IBA) is a powerful tool for the study of environmental pollution because it can provide information on a broad range of elements with high sensitivity and low detection limits, is non-destructive, and requires little or no sample preparation. It also provides excellent training for the next generation of environmental scientists. Beams of protons and alpha particles with energies of a few MeV from the 1.1-MV tandem Pelletron accelerator (NEC Model 3SDH) in the UCIBAL are used to characterize environmental samples using IBA techniques such as proton-induced X-ray emission, Rutherford back-scattering, and proton-induced gamma-ray emission. Recent projects include the characterization of atmospheric aerosols in the Adirondack Mountains of upstate New York, the study of heavy metal pollutants in river sediment, measurements of Pb diffusion in sulfide minerals to help constrain the determination of the age of iron meteorites, and the search for heavy metals and toxins in artificial turf.

High Temperature Thermal Stability and Oxidation Resistance of Magnetron-sputtered Homogeneous CrAlON Coatings on 430 Steel

NASA Astrophysics Data System (ADS)

Kayani, A.; Wickey, K. J.; Nandasiri, M. I.; Moore, A.; Garratt, E.; AlFaify, S.; Gao, X.; Smith, R. J.; Buchanan, T. L.; Priyantha, W.; Kopczyk, M.; Gannon, P. E.; Gorokhovsky, V. I.

2009-03-01

The requirements of low cost and high-temperature corrosion resistance for bipolar interconnect plates in solid oxide fuel cell stacks has directed attention to the use of metal plates with oxidation resistant coatings. We have investigated the performance of steel plates with homogenous coatings of CrAlON (oxynitrides). The coatings were deposited using RF magnetron sputtering, with Ar as a sputtering gas. Oxygen in these coatings was not intentionally added. Oxygen might have come through contaminated nitrogen gas bottle, leak in the chamber or from the partial pressure of water vapors. Nitrogen was added during the growth process to get oxynitride coating. The Cr/Al composition ratio in the coatings was varied in a combinatorial approach. The coatings were subsequently annealed in air for up to 25 hours at 800° C. The composition of the coated plates and the rate of oxidation were characterized using Rutherford backscattering (RBS) and nuclear reaction analysis (NRA). From our results, we conclude that Al rich coatings are more susceptible to oxidation than Cr rich coatings.

Key concepts behind forming-free resistive switching incorporated with rectifying transport properties

PubMed Central

Shuai, Yao; Ou, Xin; Luo, Wenbo; Mücklich, Arndt; Bürger, Danilo; Zhou, Shengqiang; Wu, Chuangui; Chen, Yuanfu; Zhang, Wanli; Helm, Manfred; Mikolajick, Thomas; Schmidt, Oliver G.; Schmidt, Heidemarie

2013-01-01

This work reports the effect of Ti diffusion on the bipolar resistive switching in Au/BiFeO3/Pt/Ti capacitor-like structures. Polycrystalline BiFeO3 thin films are deposited by pulsed laser deposition at different temperatures on Pt/Ti/SiO2/Si substrates. From the energy filtered transmission electron microscopy and Rutherford backscattering spectrometry it is observed that Ti diffusion occurs if the deposition temperature is above 600°C. The current-voltage (I–V) curves indicate that resistive switching can only be achieved in Au/BiFeO3/Pt/Ti capacitor-like structures where this Ti diffusion occurs. The effect of Ti diffusion is confirmed by the BiFeO3 thin films deposited on Pt/sapphire and Pt/Ti/sapphire substrates. The resistive switching needs no electroforming process, and is incorporated with rectifying properties which is potentially useful to suppress the sneak current in a crossbar architecture. Those specific features open a promising alternative concept for nonvolatile memory devices as well as for other memristive devices like synapses in neuromorphic circuits. PMID:23860408

Freely-migrating-defect production during irradiation at elevated temperatures

NASA Astrophysics Data System (ADS)

Hashimoto, T.; Rehn, L. E.; Okamoto, P. R.

1988-12-01

Radiation-induced segregation in a Cu-1 at. % Au alloy was investigated using in situ Rutherford backscattering spectrometry. The amount of Au atom depletion in the near surface region was measured as a function of dose during irradiation at 350 °C with four ions of substantially different masses. Relative efficiencies for producing freely migrating defects were evaluated for 1.8-MeV 1H, 4He, 20Ne, and 84Kr ions by determining beam current densities that gave similar radiation-induced segregation rates. Irradiations with primary knock-on atom median energies of 1.7, 13, and 79 keV yielded relative efficiencies of 53, 7, and 6 %, respectively, compared to the irradiation with a 0.83-keV median energy. Despite quite different defect and host alloy properties, the relative efficiencies for producing freely migrating defects determined in Cu-Au are remarkably similar to those found previously in Ni-Si alloys. Hence, the reported efficiencies appear to offer a reliable basis for making quantitative correlations of microstructural changes induced in different alloy systems by a wide variety of irradiation particles.

Temperature-Dependent Helium Ion-Beam Mixing in an Amorphous SiOC/Crystalline Fe Composite

DOE PAGES

Su, Qing; Price, Lloyd; Shao, Lin; ...

2016-10-31

Temperature dependent He-irradiation-induced ion-beam mixing between amorphous silicon oxycarbide (SiOC) and crystalline Fe was examined with a transmission electron microscope (TEM) and via Rutherford backscattering spectrometry (RBS). The Fe marker layer (7.2 ± 0.8 nm) was placed in between two amorphous SiOC layers (200 nm). The amount of ion-beam mixing after 298, 473, 673, 873, and 1073 K irradiation was investigated. Both TEM and RBS results showed no ion-beam mixing between Fe and SiOC after 473 and 673 K irradiation and a very trivial amount of ion-beam mixing (~2 nm) after 298 K irradiation. At irradiation temperatures higher than 873more » K, the Fe marker layer broke down and RBS could no longer be used to quantitatively examine the amount of ion mixing. The results indicate that the Fe/SiOC nanocomposite is thermally stable and tends to demix in the temperature range from 473 to 673 K. For application of this composite structure at temperatures of 873 K or higher, layer stability is a key consideration.« less

In situ measurement of low-Z material coating thickness on high Z substrate for tokamaks

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mueller, D., E-mail: dmueller@pppl.gov; Roquemore, A. L.; Jaworski, M.

Rutherford backscattering of energetic particles can be used to determine the thickness of a coating of a low-Z material over a heavier substrate. Simulations indicate that 5 MeV alpha particles from an {sup 241}Am source can be used to measure the thickness of a Li coating on Mo tiles between 0.5 and 15 μm thick. Using a 0.1 mCi source, a thickness measurement can be accomplished in 2 h of counting. This technique could be used to measure any thin, low-Z material coating (up to 1 mg/cm{sup 2} thick) on a high-Z substrate, such as Be on W, B on Mo, or Limore » on Mo. By inserting a source and detector on a moveable probe, this technique could be used to provide an in situ measurement of the thickness of Li coating on NSTX-U Mo tiles. A test stand with an alpha source and an annular solid-state detector was used to investigate the measurable range of low-Z material thicknesses on Mo tiles.« less

Effect of the growth rate on the morphology and structural properties of hut-shaped Ge islands in Si(001).

PubMed

Yakimov, A I; Nikiforov, A I; Dvurechenskii, A V; Ulyanov, V V; Volodin, V A; Groetzschel, R

2006-09-28

The effect of Ge deposition rate on the morphology and structural properties of self-assembled Ge/Si(001) islands was studied. Ge/Si(001) layers were grown by solid-source molecular-beam epitaxy at 500 °C. We adjusted the Ge coverage, 6 monolayers (ML), and varied the Ge growth rate by a factor of 100, R = 0.02-2 ML s(-1), to produce films consisting of hut-shaped Ge islands. The samples were characterized by scanning tunnelling microscopy, Raman spectroscopy, and Rutherford backscattering measurements. The mean lateral size of Ge nanoclusters decreases from 14.1 nm at R = 0.02 ML s(-1) to 9.8 nm at R = 2 ML s(-1). The normalized width of the size distribution shows non-monotonic behaviour as a function of R and has a minimum value of 19% at R = 2 ML s(-1). Ge nanoclusters fabricated at the highest deposition rate demonstrate the best structural quality and the highest Ge content (∼0.9).

Nanocomposite synthesis and photoluminescence properties of MeV Au-ion beam modified Ni thin films

NASA Astrophysics Data System (ADS)

Siva, Vantari; Datta, Debi P.; Singh, Avanendra; Som, T.; Sahoo, Pratap K.

2016-01-01

We report on the synthesis and properties of nano-composites from thin Ni films on Silica matrix using Au-ion beam. When 2.2 MeV Au-ions are irradiated on 5 nm Ni film on Silica, the surface morphology changes drastically with ion fluence. In fact, within a fluence range of 5 × 1014-1 × 1016 ions/cm2, a sharp increase in surface roughness follows after an initial surface smoothening. The depth profiles extracted from Rutherford backscattering spectra demonstrates the diffusion of Ni and Au into the silica matrix. The photoluminescence spectra of the irradiated samples reveal the development of two bands centered at 3.3 eV and 2.66 eV, respectively. Deconvolution of those bands shows five different emission peaks, corresponding to different luminescence centers, which confirms the existence of Ni-Au nanocomposites in silica matrix. The optical and structural modifications are understood in terms of ion induced local heating and mass transport due to thermal spikes, which leads to nanocomposite formation in silica.

Silicide induced ion beam patterning of Si(001).

PubMed

Engler, Martin; Frost, Frank; Müller, Sven; Macko, Sven; Will, Moritz; Feder, René; Spemann, Daniel; Hübner, René; Facsko, Stefan; Michely, Thomas

2014-03-21

Low energy ion beam pattern formation on Si with simultaneous co-deposition of Ag, Pd, Pb, Ir, Fe or C impurities was investigated by in situ scanning tunneling microscopy as well as ex situ atomic force microscopy, scanning electron microscopy, transmission electron microscopy and Rutherford backscattering spectrometry. The impurities were supplied by sputter deposition. Additional insight into the mechanism of pattern formation was obtained by more controlled supply through e-beam evaporation. For the situations investigated, the ability of the impurity to react with Si, i.e. to form a silicide, appears to be a necessary, but not a sufficient condition for pattern formation. Comparing the effects of impurities with similar mass and nuclear charge, the collision kinetics is shown to be not of primary importance for pattern formation. To understand the observed phenomena, it is necessary to assume a bi-directional coupling of composition and height fluctuations. This coupling gives rise to a sensitive dependence of the final morphology on the conditions of impurity supply. Because of this history dependence, the final morphology cannot be uniquely characterized by a steady state impurity concentration.

The Narodny ion accelerator as an injector for a small cyclotron

NASA Astrophysics Data System (ADS)

Derenchuk, V.

1985-01-01

A 120 keV electrostatic accelerator is currently in use at the University of Manitoba as an ion implanter. It is proposed to use this accelerator (called the Narodny ion accelerator or NIA), upgraded to 200 keV, as an injector for a small light ion cyclotron. This "minicyclotron" will consist of 6 sectors with four dees operating at 60 kV and variable frequency. The ions will be extracted at about 50 cm radius. The types of ions to be accelerated are H -, H +, D -1, 3He 2+, 4He 2+, 6Li 3+, and 7Li 3+ with a maximum energy of about 4 MeV for the Li ions and between 2 and 3 MeV for the He ions. A beam current of close to 0.5 mA is anticipated for H + and D + ions and high energy resolution ( ΔE/ E ~ 10 -3) is expected for all ions. The marriage of these two accelerators will give a very wide range of ion implantation energies (for certain ion species) as well as a source of particles for Rutherford backscatter analysis.

High density flux of Co nanoparticles produced by a simple gas aggregation apparatus.

PubMed

Landi, G T; Romero, S A; Santos, A D

2010-03-01

Gas aggregation is a well known method used to produce clusters of different materials with good size control, reduced dispersion, and precise stoichiometry. The cost of these systems is relatively high and they are generally dedicated apparatuses. Furthermore, the usual sample production speed of these systems is not as fast as physical vapor deposition devices posing a problem when thick samples are needed. In this paper we describe the development of a multipurpose gas aggregation system constructed as an adaptation to a magnetron sputtering system. The cost of this adaptation is negligible and its installation and operation are both remarkably simple. The gas flow for flux in the range of 60-130 SCCM (SCCM denotes cubic centimeter per minute at STP) is able to completely collimate all the sputtered material, producing spherical nanoparticles. Co nanoparticles were produced and characterized using electron microscopy techniques and Rutherford back-scattering analysis. The size of the particles is around 10 nm with around 75 nm/min of deposition rate at the center of a Gaussian profile nanoparticle beam.

Synergistically-enhanced ion track formation in pre-damaged strontium titanate by energetic heavy ions

DOE PAGES

Xue, Haizhou; Zarkadoula, Eva; Sachan, Ritesh; ...

2018-03-20

Latent ion tracks created by energetic heavy ions (12 MeV Ti to 946 MeV Au) in single crystal SrTiO 3 are investigated in this paper using Rutherford backscattering spectrometry and scanning transmission electron microscopy. The results demonstrate that pre-existing irradiation damage, introduced via elastic collision processes, interacts synergistically with the electronic energy deposition from energetic heavy ions to enhance formation of latent ion tracks. The average amorphous cross-section increases with the level of pre-damage and is linearly proportional to the electronic energy loss of the ions, with a slope dependent on the pre-damage level. For the highest energy ions (629more » MeV Xe and 946 MeV Au), the tracks are continuous over the pre-damaged depth, but become discontinuous beyond the pre-damaged region. Finally, this work provides new understanding and insights on ion-solid interactions that significantly impact the interpretation of latent track formation processes, models of amorphization, and the fabrication of electro-ceramic devices.« less

Miniature Neutron-Alpha Activation Spectrometer

NASA Astrophysics Data System (ADS)

Rhodes, E.; Goldsten, J.

2001-01-01

We are developing a miniature neutron-alpha activation spectrometer for in situ analysis of samples including rocks, fines, ices, and drill cores, suitable for a lander or Rover platform, that would meet the severe mass, power, and environmental constraints of missions to the outer planets. In the neutron-activation mode, a gamma-ray spectrometer will first perform a penetrating scan of soil, ice, and loose material underfoot (depths to 10 cm or more) to identify appropriate samples. Chosen samples will be analyzed in bulk in neutron-activation mode, and then the sample surfaces will be analyzed in alpha-activation mode using Rutherford backscatter and x-ray spectrometers. The instrument will provide sample composition over a wide range of elements, including rock-forming elements (such as Na, Mg, Si, Fe, and Ca), rare earths (Sm and Eu for example), radioactive elements (K, Th, and U), and light elements present in water, ices, and biological materials (mainly H, C, O, and N). The instrument is expected to have a mass of about l kg and to require less than 1 W power. Additional information is contained in the original extended abstract.

Cadmium concentrations in the brains of Alzheimer cases

DOE Office of Scientific and Technical Information (OSTI.GOV)

Spyrou, N.M.; Stedman, J.D.

1996-12-31

There is ongoing research in relating the concentration of elements in the brain with Alzheimer`s disease. The presence of particular elements, such as aluminum and vanadium, has been considered as a possible environmental factor, creating significant interest and controversy in the field. We have been analyzing brain tissue from the MRC Alzheimer`s Disease Brain Bank, Institute of Psychiatry, from a number of cortical regions of the brain, namely, the frontal, occipital, parietal, and temporal lobes, as well as from the left and right hemispheres of the same brain whenever possible. The techniques employed have been proton-induced X-ray emission (PIXE) analysis,more » proton-induced gamma-ray emission (PIGE) analysis, Rutherford backscattering (RBS), and instrumental neutron activation analysis. Neutron irradiations were carried out at the Imperial College Consort II reactor, whereas for PIXE, PIGE, and RBS, the University of Surrey Accelerator Laboratories were used employing a Van de Graaff accelerator. In this paper, we present the cadmium results from the frontal lobe of Alzheimer cases and controls determined by PIXE analysis.« less

Sintered Cr/Pt and Ni/Au ohmic contacts to B 12P 2

DOE PAGES

Frye, Clint D.; Kucheyev, Sergei O.; Edgar, James H.; ...

2015-04-09

With this study, icosahedral boron phosphide (B 12P 2) is a wide-bandgap semiconductor possessing interesting properties such as high hardness, chemical inertness, and the reported ability to self-heal from irradiation by high energy electrons. Here, the authors developed Cr/Pt and Ni/Au ohmic contacts to epitaxially grown B 12P 2 for materials characterization and electronic device development. Cr/Pt contacts became ohmic after annealing at 700 °C for 30 s with a specific contact resistance of 2×10 –4 Ω cm 2, as measured by the linear transfer length method. Ni/Au contacts were ohmic prior to any annealing, and their minimum specific contactmore » resistance was ~l–4 × 10 –4 Ω cm 2 after annealing over the temperature range of 500–800 °C. Rutherford backscattering spectrometry revealed a strong reaction and intermixing between Cr/Pt and B 12P 2 at 700 °C and a reaction layer between Ni and B 12P 2 thinner than ~25 nm at 500 °C.« less

On the bulk degradation of yttria-stabilized nanocrystalline zirconia dental implant abutments: an electron backscatter diffraction study.

PubMed

Ocelík, V; Schepke, U; Rasoul, H Haji; Cune, M S; De Hosson, J Th M

2017-08-01

Degradation of yttria-stabilized zirconia dental implants abutments due to the tetragonal to monoclinic phase transformation was studied in detail by microstructural characterization using Electron Back Scatter Diffraction (EBSD). The amount and distribution of the monoclinic phase, the grain-size distribution and crystallographic orientations between tetragonal and monoclinic crystals in 3 mol.% yttria-stabilized polycrystalline zirconia (3Y-TZP) were determined in two different types of nano-crystalline dental abutments, even for grains smaller than 400 nm. An important and novel conclusion is that no substantial bulk degradation of 3Y-TZP dental implant abutments was detected after 1 year of clinical use.

Modulated Electron Emission by Scattering-Interference of Primary Electrons

NASA Astrophysics Data System (ADS)

Valeri, Sergio; di Bona, Alessandro

We review the effects of scattering-interference of the primary, exciting beam on the electron emission from ordered atomic arrays. The yield of elastically and inelastically backscattered electrons, Auger electrons and secondary electrons shows a marked dependence on the incidence angle of primary electrons. Both the similarity and the relative importance of processes experienced by incident and excident electrons are discussed. We also present recent studies of electron focusing and defocusing along atomic chains. The interplay between these two processes determines the in-depth profile of the primary electron intensity anisotropy. Finally, the potential for surface-structural studies and limits for quantitative analysis are discussed, in comparison with the Auger electron diffraction (AED) and photoelectron diffraction (PD) techniques.

Dislocation density evolution in the process of high-temperature treatment and creep of EK-181 steel

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vershinina, Tatyana, E-mail: vershinina@bsu.edu.ru

2017-03-15

X-ray diffraction has been used to study the dislocation structure in ferrite-martensite high-chromium steel EK-181 in the states after heat treatment and high-temperature creep. The influence of heat treatment and stress on evolution of lath martensite structure was investigated by and electron back-scattered diffraction. The effect of nitrogen content on the total dislocation density, fraction of edge and screw dislocation segments are analyzed. - Highlights: •Fraction of edge dislocation in quenched state depends on nitrogen concentration. •Nitrogen affects the character of dislocation structure evolution during annealing. •Edge dislocations fraction influences on dislocation density after aging and creep.

Development and Characterization of a 16.3 keV X-Ray Source at the National Ignition Facility

NASA Astrophysics Data System (ADS)

Fournier, K. B.; Barrios, M. A.; Schneider, M. B.; Khan, S.; Chen, H.; Coppari, F.; Rygg, R.; Hohenberger, M.; Albert, F.; Moody, J.; Ralph, J.; Kemp, G. E.; Regan, S. P.

2014-10-01

X-ray sources at the National Ignition Facility are needed for radiography of in-flight capsules in inertial confinement fusion experiments and for diffraction studies of materials at high pressures. In the former case, we want to optimize signal to noise and signal over background ratios for the radiograph, in the latter case, we want to minimize high-energy emission from the backlighter that creates background on the diffraction data. Four interleaved shots at NIF were taken in one day, with laser irradiances on a Zr backlighter target ranging from 5 to 14 × 1015 W/cm2. Two shots were for source optimization as a function of laser irradiance. X-ray fluxes were measured with the time-resolved NIF X-ray Spectrometer (NXS) and the DANTE array of calibrated, filtered diodes. Two shots were optimized to make backscatter measurements with the FABS and NBI optical power systems. The backscatter levels are investigated to look for correlation with hot electron populations inferred from high-energy x rays measured with the FFLEX broadband spectrometer. Results from all shots are presented and compared with models. Work performed under the auspices of the U.S. DOE by LLNL under Contract No. DE-AC52-07NA27344.

Investigation of Synthetic Mg(1.3)V(1.7)O4 Spinel with MgO Inclusions: Case Study of a Spinel with an Apparently occupied Interstitial Site

NASA Technical Reports Server (NTRS)

Uchida, Hinako; Righter, Kevin; Lavina, Barbara; Nowell, Matthew M.; Wright, Stuart I.; Downs, Robert T.; Yang, Hexiong

2007-01-01

A magnesium vanadate spinel crystal, ideally MgV2O4, synthesized at 1 bar, 1200 C and equilibrated under FMQ + 1.3 log f(sub o2) condition, was investigated using single-crystal X-ray diffraction, electron microprobe, and electron backscatter (EBSD). The initial X-ray structure refinements gave tetrahedral and octahedral site occupancies, along with the presence of 0.053 apfu Mg at an interstitial octahedral site . Back-scattered electron (BSE) images and electron microprobe analyses revealed the existence of an Mg-rich phase in the spinel matrix, which was too small (less than or equal to 3microns) for an accurate chemical determination. The EBSD analysis combined with X-ray energy dispersive spectroscop[y (XEDS) suggested that the Mg-rich inclusions are periclase oriented coherently with the spinel matrix. The final structure refinements were optimized by subtracting the X-ray intensity contributions (approx. 9%) of periclase reflections, which eliminated the interstitial Mg. This study provides insight into possible origins of refined interstitial cations reported in the the literature for spinel, and points to the difficulty of using only X-ray diffraction data to distinguish a spinel with interstitial cations from one with coherently oriented MgO inclusions.

Combined application of electron backscatter diffraction and stereo-photogrammetry in fractography studies.

PubMed

Davies, P A; Randle, V

2001-10-01

The main aim of this paper is to report on recent experimental developments that have succeeded in combining electron back-scatter diffraction (EBSD) with stereo-photogrammetry, compared with two other methods for study of fracture surfaces, namely visual fractography analysis in the scanning electron microscope (SEM) and EBSD directly from facets. These approaches will be illustrated with data relating to the cleavage plane orientation analysis in a ferritic and C-Mn steel. It is demonstrated that the combined use of EBSD and stereo-photogrammetry represents a significant advance in the methodology for facet crystallography analysis. The results of point counting from fractograph characterization determined that the proportions of intergranular fracture in C-Mn and ferritic steels were 10.4% and 9.4%, respectively. The crystallographic orientation was determined directly from the fracture surface of a ferritic steel sample and produced an orientation distribution with a clear trend towards the [001] plane. A stereo-photogrammetry technique was validated using the known geometry of a Vickers hardness indent. The technique was then successfully employed to measure the macroscopic orientation of individual cleavage facets in the same reference frame as the EBSD measurements. Correlating the results of these measurements indicated that the actual crystallographic orientation of every cleavage facet identified in the steel specimens is [001].

Assessing Strain Mapping by Electron Backscatter Diffraction and Confocal Raman Microscopy Using Wedge-indented Si

PubMed Central

Friedman, Lawrence H.; Vaudin, Mark D.; Stranick, Stephan J.; Stan, Gheorghe; Gerbig, Yvonne B.; Osborn, William; Cook, Robert F.

2016-01-01

The accuracy of electron backscatter diffraction (EBSD) and confocal Raman microscopy (CRM) for small-scale strain mapping are assessed using the multi-axial strain field surrounding a wedge indentation in Si as a test vehicle. The strain field is modeled using finite element analysis (FEA) that is adapted to the near-indentation surface profile measured by atomic force microscopy (AFM). The assessment consists of (1) direct experimental comparisons of strain and deformation and (2) comparisons in which the modeled strain field is used as an intermediate step. Direct experimental methods (1) consist of comparisons of surface elevation and gradient measured by AFM and EBSD and of Raman shifts measured and predicted by CRM and EBSD, respectively. Comparisons that utilize the combined FEA-AFM model (2) consist of predictions of distortion, strain, and rotation for comparison with EBSD measurements and predictions of Raman shift for comparison with CRM measurements. For both EBSD and CRM, convolution of measurements in depth-varying strain fields is considered. The interconnected comparisons suggest that EBSD was able to provide an accurate assessment of the wedge indentation deformation field to within the precision of the measurements, approximately 2 × 10−4 in strain. CRM was similarly precise, but was limited in accuracy to several times this value. PMID:26939030

Seismic anisotropy of the crust: electron-backscatter diffraction measurements from the Basin and Range

NASA Astrophysics Data System (ADS)

Erdman, Monica E.; Hacker, Bradley R.; Zandt, George; Seward, Gareth

2013-11-01

Crystal preferred orientations were measured in a suite of rocks from three locations in the Basin and Range using electron-backscatter diffraction. Anisotropic velocities were calculated for all rocks using single-crystal stiffnesses, the Christoffel equation and Voigt-Reuss-Hill averaging. Anisotropic velocities were calculated for all three crustal sections using these values combined with rock proportions as exposed in the field. One suite of rocks previously measured in the laboratory was used as a benchmark to evaluate the accuracy of the calculated velocities. Differences in the seismic anisotropy of the Funeral Mountains, Ruby Mountains and East Humboldt Range sections arise because of differences in mineralogy and strain, with the calc-silicate dominated Ruby Mountains section having higher P-wave speeds and VP/VS ratios because of the reduced quartz content. In all cases, the velocities show either transverse isotropy or nearly so, with a unique slow axis normal to the foliation. Velocity anisotropy can thus be used to infer the flow plane, but not the flow direction in typical crustal rocks. Areas with a subhorizontal foliation have minimal shear wave splitting for vertically propagating waves and are thus good places to measure mantle anisotropy using SKS-splitting.

Effect of cold deformation on the recrystallization behavior of FePd alloy at the ordering temperature using electron backscatter diffraction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lin, Hung-Pin; Chen, Yen-Chun; Chen, Delphic

2014-08-15

In this study, the evolution of the recrystallization texture and microstructure was investigated after annealing of 50% and 90% cold-rolled FePd alloy at 530 °C. The FePd alloy was produced by vacuum arc melting in an atmosphere of 97% Ar and 3% H{sub 2}. The specimens were cold rolled to achieve 50% and 90% reduction in thickness. Electron backscatter diffraction measurements were performed on the rolling direction–normal direction section. With increased deformation from 50% to 90%, recrystallized texture transition occurs. For the 50% cold-rolled alloy, the preferred orientation is (0 1 0) [11 0 1], which is close to themore » cubic orientation after 400 h of annealing. For the 90% cold-rolled alloy, the orientation changes to (0 5 4) [22–4 5] after 16 h of annealing. - Highlights: • Texture and microstructure in cold-rolled FePd alloy was investigated during annealing using EBSD. • The recrystallized texture of 50% cold-rolled FePd is (0 1 0) [11 0 1] at 530 °C for 400 hours. • The recrystallized texture of 90% cold-rolled FePd is changed to (0 5 4) [22–4 5] at 530 °C after 16 hours.« less

Electromagnetic scattering by impedance structures

NASA Technical Reports Server (NTRS)

Balanis, Constantine A.; Griesser, Timothy

1987-01-01

The scattering of electromagnetic waves from impedance structures is investigated, and current work on antenna pattern calculation is presented. A general algorithm for determining radiation patterns from antennas mounted near or on polygonal plates is presented. These plates are assumed to be of a material which satisfies the Leontovich (or surface impedance) boundary condition. Calculated patterns including reflection and diffraction terms are presented for numerious geometries, and refinements are included for antennas mounted directly on impedance surfaces. For the case of a monopole mounted on a surface impedance ground plane, computed patterns are compared with experimental measurements. This work in antenna pattern prediction forms the basis of understanding of the complex scattering mechanisms from impedance surfaces. It provides the foundation for the analysis of backscattering patterns which, in general, are more problematic than calculation of antenna patterns. Further proposed study of related topics, including surface waves, corner diffractions, and multiple diffractions, is outlined.

Photoelectron diffraction and holography: Some new directions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fadley, C.S.

1993-08-01

Photoelectron diffraction has by now become a versatile and powerful technique for studying surface structures, with special capabilities for resolving chemical and magnetic states of atoms and deriving direct structural information from both forward scattering along bond directions and back-scattering path length differences. Further fitting experiment to theory can lead to structural accuracies in the {plus_minus}0.03 ){Angstrom} range. Holographic inversions of such diffraction data also show considerable promise for deriving local three-dimensional structures around a given emitter with accuracies of {plus_minus}0.2--0.3 {Angstrom}. Resolving the photoelectron spin in some way and using circularly polarized radiation for excitation provide added dimensions formore » the study of magnetic systems and chiral experimental geometries. Synchrotron radiation with the highest brightness and energy resolution, as well as variable polarization, is crucial to the full exploitation of these techniques.« less

Texture analysis of Napoleonic War Era copper bolts

NASA Astrophysics Data System (ADS)

Malamud, Florencia; Northover, Shirley; James, Jon; Northover, Peter; Kelleher, Joe

2016-04-01

Neutron diffraction techniques are suitable for volume texture analyses due to high penetration of thermal neutrons in most materials. We have implemented a new data analysis methodology that employed the spatial resolution achievable by a time-of-flight neutron strain scanner to non-destructively determine the crystallographic texture at selected locations within a macroscopic sample. The method is based on defining the orientation distribution function of the crystallites from several incomplete pole figures, and it has been implemented on ENGIN-X, a neutron strain scanner at the Isis Facility in the UK. Here, we demonstrate the application of this new texture analysis methodology in determining the crystallographic texture at selected locations within museum quality archaeological objects up to 1 m in length. The results were verified using samples of similar, but less valuable, objects by comparing the results of applying this method with those obtained using both electron backscatter diffraction and X-ray diffraction on their cross sections.

Microscopic stress characterisation of functional iron-based alloys by white X-ray microbeam diffraction

NASA Astrophysics Data System (ADS)

Kwon, E. P.; Sato, S.; Fujieda, S.; Shinoda, K.; Kajiwara, K.; Sato, M.; Suzuki, S.

2018-01-01

Microscopic residual stress evolution in an austenite (γ) grain during a shape-memory process in an Fe-Mn-Si-Cr alloy was investigated using the white X-ray microbeam diffraction technique. The stresses were measured on a coarse grain, which had an orientation near <144>, parallel to the tensile loading direction with a high Schmid factor for a martensitic transformation. The magnitude of the residual stresses in a grain of the sample, which was subjected to a 23 % tensile strain and subsequent shape-recovery heating, was found to be very small and comparable to that prior to tensile deformation. Measurements of the recovery strain and microstructural analyses using electron backscatter diffraction suggested that the low residual stresses could be attributed to the significant shape recovery caused by a highly reversible martensitic transformation in the grain with a particular orientation.

The detection of objects in a turbid underwater medium using orbital angular momentum (OAM)

NASA Astrophysics Data System (ADS)

Cochenour, Brandon; Rodgers, Lila; Laux, Alan; Mullen, Linda; Morgan, Kaitlyn; Miller, Jerome K.; Johnson, Eric G.

2017-05-01

We present an investigation of the optical property of orbital angular momentum (OAM) for use in the detection of objects obscured by a turbid underwater channel. In our experiment, a target is illuminated by a Gaussian beam. An optical vortex is formed by passing the object-reflected and backscattered light through a diffractive spiral phase plate at the receiver, which allows for the spatial separation of coherent and non-coherent light. This provides a method for discriminating target from environment. Initial laboratory results show that the ballistic target return can be detected 2-3 orders of magnitude below the backscatter clutter level. Furthermore, the detection of this coherent component is accomplished with the use of a complicated optical heterodyning scheme. The results suggest new optical sensing techniques for underwater imaging or LIDAR.

Lead foil in dental X-ray film: Backscattering rejection or image intensifier?

NASA Astrophysics Data System (ADS)

Hönnicke, M. G.; Delben, G. J.; Godoi, W. C.; Swinka-Filho, V.

2014-11-01

Dental X-ray films are still largely used due to sterilization issues, simplicity and, mainly, economic reasons. These films almost always are double coated (double emulsion) and have a lead foil in contact with the film for X-ray backscattering rejection. Herein we explore the use of the lead foil as an image intensifier. In these studies, spatial resolution was investigated when images were acquired on the dental X-ray films with and without the lead foil. Also, the lead foil was subjected to atomic analysis (fluorescent measurements) and structure analysis (X-ray diffraction). We determined that the use of the lead foil reduces the exposure time, however, does not affect the spatial resolution on the acquired images. This suggests that the fluorescent radiation spread is smaller than the grain sizes of the dental X-ray films.

Shallow water acoustic backscatter and reverberation measurements using a 68-kHz cylindrical array

NASA Astrophysics Data System (ADS)

Gallaudet, Timothy Cole

2001-10-01

The characterization of high frequency, shallow water acoustic backscatter and reverberation is important because acoustic systems are used in many scientific, commercial, and military applications. The approach taken is to use data collected by the Toroidal Volume Search Sonar (TVSS), a 68 kHz multibeam sonar capable of 360° imaging in a vertical plane perpendicular to its direction of travel. With this unique capability, acoustic backscatter imagery of the seafloor, sea surface, and horizontal and vertical planes in the volume are constructed from data obtained in 200m deep waters in the Northeastern Gulf of Mexico when the TVSS was towed 78m below the surface, 735m astern of a towship. The processed imagery provide a quasi-synoptic characterization of the spatial and temporal structure of boundary and volume acoustic backscatter and reverberation. Diffraction, element patterns, and high sidelobe levels are shown to be the most serious problems affecting cylindrical arrays such as the TVSS, and an amplitude shading method is presented for reducing the peak sidelobe levels of irregular-line and non-coplanar arrays. Errors in the towfish's attitude and motion sensor, and irregularities in the TVSS's transmitted beampattern produce artifacts in the TVSS-derived bathymetry and seafloor acoustic backscatter imagery. Correction strategies for these problems are described, which are unique in that they use environmental information extracted from both ocean boundaries. Sea surface and volume acoustic backscatter imagery are used to explore and characterize the structure of near-surface bubble clouds, schooling fish, and zooplankton. The simultaneous horizontal and vertical coverage provided by the TVSS is shown to be a primary advantage, motivating further use of multibeam sonars in these applications. Whereas boundary backscatter fluctuations are well described by Weibull, K, and Rayleigh mixture probability distributions, those corresponding to volume backscatter are multi-modal, with the log-normal distribution providing the best fits to the centers of the distributions, and the Rayleigh mixture models providing the best fits to the tails of the distributions. The largest distribution tails result from resonant microbubbles and patchy aggregations of zooplankton. The Office of Naval Research funded this work under ONR-NRL Contract No. N00014-96-1-G9I3.

A collection of problems for physics teaching

NASA Astrophysics Data System (ADS)

Gröber, S.; Jodl, H.-J.

2010-07-01

Problems are an important instrument for teachers to mediate physics content and for learners to adopt this content. This collection of problems is not only suited to traditional teaching and learning in lectures or student labs, but also to all kinds of new ways of teaching and learning, such as self-study, long-distance teaching, project-oriented learning and the use of remote labs/web experiments. We focus on Rutherford's scattering experiment, electron diffraction, Millikan's experiment and the use of pendulums to measure the dependence of gravitational acceleration on latitude. The collection contains about 50 problems with 160 subtasks and solutions, altogether 100 pages. Structure, content, range and the added value of the problems are described. The whole collection can be downloaded for free from http://rcl.physik.uni-kl.de.

Preparation and characterization of copper telluride thin films by modified chemical bath deposition (M-CBD) method

NASA Astrophysics Data System (ADS)

Pathan, H. M.; Lokhande, C. D.; Amalnerkar, D. P.; Seth, T.

2003-09-01

Copper telluride thin films were deposited using modified chemical method using copper(II) sulphate; pentahydrate [CuSO 4·5H 2O] and sodium tellurite [Na 2TeO 3] as cationic and anionic sources, respectively. Modified chemical method is based on the immersion of the substrate into separately placed cationic and anionic precursors. The preparative conditions such as concentration, pH, immersion time, immersion cycles, etc. were optimized to get good quality copper telluride thin films at room temperature. The films have been characterized for structural, compositional, optical and electrical transport properties by means of X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray analysis (EDAX), Rutherford back scattering (RBS), optical absorption/transmission, electrical resistivity and thermoemf measurement techniques.

Pulsed laser deposition of lithium niobate thin films

NASA Astrophysics Data System (ADS)

Canale, L.; Girault-Di Bin, C.; Cosset, F.; Bessaudou, A.; Celerier, A.; Decossas, J.-Louis; Vareille, J.-C.

2000-12-01

Pulsed laser deposition of Lithium Niobate thin films onto sapphire (0001) substrates is reported. Thin films composition and structure have been determined using Rutherford Backscattermg Spectroscopy (RBS) and X-ray diffraction ( XRD) experiments. The influe:nce of deposition parameters such as substrate temperature, oxygen pressure and target to substrate distance on the composition and the structure of the films has been studied. Deposition temperature is found to be an important parameter which enables us to grow LiNbO3 films without the Li deficient phase LiNb3O8. Nearly stoichiometric thin fihns have been obtained for an oxygen pressure of 0. 1 Ton and a substrate temperature of 800°C. Under optimized conditions the (001) preferential orientation of growth, suitable for most optical applications, has been obtained.

Thermal neutron radiative capture on cadmium as a counting technique at the INES beam line at ISIS: A preliminary investigation of detector cross-talk.

PubMed

Festa, G; Grazzi, F; Pietropaolo, A; Scherillo, A; Schooneveld, E M

2017-12-01

Experimental tests are presented that assess the cross-talk level among three scintillation detectors used as neutron counters exploiting the thermal neutron radiative capture on Cd. The measurements were done at the INES diffractometer operating at the ISIS spallation neutron source (Rutherford Appleton Laboratory, UK). These tests follow a preliminary set of measurements performed on the same instrument to study the effectiveness of this thermal neutron counting strategy in neutron diffraction measurements, typically performed on INES using squashed 3 He filled gas tubes. The experimental data were collected in two different geometrical configurations of the detectors and compared to results of Monte Carlo simulations, performed using the MCNP code. Copyright © 2017 Elsevier Ltd. All rights reserved.

Hot Corrosion Degradation of Metals and Alloys - A Unified Theory

DTIC Science & Technology

1979-06-01

microscope, electron beam microprobe and X-ray diffraction. REULTS AND DMCtESION Hot Corrosion Degradation Sectuence In attempting to develop a unified...Figure 40a. Such ghost images, which can be called corrosion front ghosts , appear as sequential dark and light zones in electron backscatter images... Electronic and Solid State Sciences AUG Ill 1979I Bolling AFB, D.C. 20332 ID PRATT &WHITNEY ARCRAFT GROUP P.O . Box 2861 /Government Products Division wi

In-Depth View of the Structure and Growth of SnO2 Nanowires and Nanobrushes.

PubMed

Stuckert, Erin P; Geiss, Roy H; Miller, Christopher J; Fisher, Ellen R

2016-08-31

Strategic application of an array of complementary imaging and diffraction techniques is critical to determine accurate structural information on nanomaterials, especially when also seeking to elucidate structure-property relationships and their effects on gas sensors. In this work, SnO2 nanowires and nanobrushes grown via chemical vapor deposition (CVD) displayed the same tetragonal SnO2 structure as revealed via powder X-ray diffraction bulk crystallinity data. Additional characterization using a range of electron microscopy imaging and diffraction techniques, however, revealed important structure and morphology distinctions between the nanomaterials. Tailoring scanning transmission electron microscopy (STEM) modes combined with transmission electron backscatter diffraction (t-EBSD) techniques afforded a more detailed view of the SnO2 nanostructures. Indeed, upon deeper analysis of individual wires and brushes, we discovered that, despite a similar bulk structure, wires and brushes grew with different crystal faces and lattice spacings. Had we not utilized multiple STEM diffraction modes in conjunction with t-EBSD, differences in orientation related to bristle density would have been overlooked. Thus, it is only through a methodical combination of several structural analysis techniques that precise structural information can be reliably obtained.

Ion-beam and dual-ion-beam sputter deposition of tantalum oxide films

NASA Astrophysics Data System (ADS)

Cevro, Mirza; Carter, George

1995-02-01

Ion-beam sputter deposition (IBS) and dual-ion-beam sputter deposition (DIBS) of tantalum oxide films was investigated at room temperature and compared with similar films prepared by e-gun deposition. The optical properties, i.e., refractive index and extinction coefficient, of IBS films were determined in the 250- to 1100-nm range by transmission spectrophotometry and at (lambda) equals 632.8 nm by ellipsometry. They were found to be mainly sensitive to the partial pressure of oxygen used as a reactive gas in the deposition process. The maximum value of the refractive index of IBS deposited tantalum oxide films was n equals 2.15 at (lambda) equals 550 nm and the extinction coefficient of order k equals 2 X 10-4. Films deposited by e-gun deposition had refractive index n 2.06 at (lambda) equals 550 nm. Films deposited using DIBS, i.e., deposition assisted by low energy Ar and O2 ions (Ea equals 0 to 300 eV) and low current density (Ji equals 0 to 40 (mu) A/cm2), showed no improvement in the optical properties of the films. Preferential sputtering occurred at Ea(Ar) equals 300 eV and Ji equals 20 (mu) A/cm2 and slightly oxygen deficient films were formed. Different bonding states in the tantalum-oxide films were determined by x-ray spectroscopy, whereas composition of the film and contaminants were determined by Rutherford backscattering spectroscopy (RBS). Tantalum oxide films formed by IBS contained relatively high Ar content (approximately equals 2.5%) originating from the reflected argon neutrals from the sputtering target whereas assisted deposition slightly increased the Ar content. Stress in the IBS-deposited films was measured by the bending technique. IBS-deposited films showed compressive stress with a typical value of s equals 3.2 X 109 dyn/cm2. Films deposited by concurrent ion bombardment showed an increase in the stress as a function of applied current density. The maximum was s approximately equals 5.6 X 109 dyn/cm2 for Ea equals 300 eV and Ji equals 35 (mu) A/cm2. All deposited films were amorphous as measured by the x-ray diffraction (XRD) method.

N +-implantation induced enhanced adhesion in WC1-x/Ti-6Al-4V

NASA Astrophysics Data System (ADS)

Laidani, Nadhira; Dorigoni, Carla; Miotello, Antonio

1996-12-01

In this work, the potentiality of the N +-implantation to promote adhesion in WC1-x/Ti-6Al-4V bilayers has been investigated. The WC 1- x films were deposited by rf sputtering in Ar discharge. N +-implantations were performed at 160 keV with ion dose ranging from 5 × 10 15 to 2 × 10 17N +/cm 2. The implantations have been carried out at two sample temperatures: 363 K and 423 K. Adhesion strength was measured by means of the scratch test in conjunction with scanning electron microscopy and energy dispersive spectrometry (EDS). Auger electron spectroscopy (AES), Rutherford backscattering spectrometry (RBS) and X-ray diffraction (XRD) analyses were used to study the chemical, compositional and structural changes of the WC1-x/Ti-6Al-4V interface. As a general result, N +-implantation modifies the adhesion failure mechanism which from adhesive, before implantation, becomes cohesive. The implantation temperature had a strong effect on the critical loads Lc. N +-implantation at 423 K resulted in a slight increase of Lc, from 2N (unimplanted systems) to 5N for all ion doses. This weak improvement of the adhesion strength was associated with the particular interface processes which allowed C, but not W, mixing into the substrate. In this case, TiC bondings formed which contributed to the substrate embrittlement. When the implantations were carried out at 363 K, both C and W underwent mixing with Ti-6Al-4V: this favoured not only an interface composition grading but also a graded chemistry across the interface, with a strong increase of Lc for low ion dose ( Lc = 14N for 1 × 10 16 N +/cm 2). Implantation with higher doses (5 × 10 16N -/cm 2 and 2 × 10 17N +/cm 2) exhibited lower efficiency ( Lc = 7N for 2 × 10 17 N +/cm 2). This ion dose dependence of the adhesion strength was attributed to the formation of different phases across the interface, probably structurally incompatible.

Depth profile by Total IBA in perovskite active layers for solar cells

NASA Astrophysics Data System (ADS)

Barreiros, M. A.; Alves, L. C.; Brites, M. J.; Corregidor, V.

2017-08-01

In recent years the record efficiency of perovskite solar cells (PSCs) has been updated exceeding now 20%. However, it is difficult to make PSCs consistently. Definite correlation has been established between the PSC performance and the perovskite film quality which involves mainly morphology, crystallinity and composition. The manufacturing development of these devices is dependent on the characterisation methodologies, on the availability of suitable and reliable analytical techniques to assess the materials composition and quality and on the relationship of these results with the cell performance. Ion beam analytical (IBA) techniques jointly with a micro-ion beam are powerful tools for materials characterisation and can provide a valuable input for the knowledge of perovskite films. Perovskite films based on CH3NH3PbI3 were prepared (from CH3NH3I and PbI2 precursors) in a planar architecture and in a mesoporous TiO2 scaffold. Proton and helium micro-beams at different energies were used in the analysis of PSC active layers, previously characterised by SEM-FEG (Scanning Electron Microscopy with a field emission gun) and XRD (X-ray diffraction). Self-consistent fit of all the obtained PIXE (Particle Induced X-ray Emission) and RBS (Rutherford Backscattering Spectrometry) spectra through Total IBA approach provided depth profiling of perovskite, its precursors and TiO2 and assess their distribution in the films. PbI2 presence and location on the active layer may hinder the charge transport and highly affect the cell performance. IBA techniques allowed to identify regions of non-uniform surface coverage and homogeneous areas and it was possible to establish the undesired presence of PbI2 and its quantitative depth profile in the planar architecture film. In the mesostructured perovskite film it was verified a non-homogeneous distribution with a decreasing of perovskite concentration down to the thin blocking layer. The good agreement between the best fits obtained in a Total IBA approach and the experimental data granted reliability to depth profile results for the studied perovskite films.

In-situ diagnostics for metalorganic chemical vapor deposition of yttrium barium copper oxide

NASA Astrophysics Data System (ADS)

Tripathi, Ashok Burton

A new stagnation flow MOCVD research reactor is described that is designed to serve as a testbed to develop tools for "intelligent" thin film deposition, such as in-situ sensors and diagnostics, control algorithms, and thin film growth models. The reactor is designed in particular for the deposition of epitaxial YBa2Cu3O 7-delta on MgO, although with minor modifications it would be suitable for deposition of any metal-oxide thin films. The reactor is specifically designed to permit closed-loop thermal and stoichiometric control of the film growth process. Closed-loop control of precursor flow rates is accomplished by using ultraviolet absorption spectroscopy on each precursor line. Also integrated into the design is a Fourier Transform Infrared (FTIR) spectroscopy system which collects real-time, in-situ infrared polarized reflectance spectra of the film as it grows. Numerical simulation was used extensively to optimize the fluid dynamics and heat transfer to provide uniform fluxes to the substrate. As a result, thickness uniformity across the substrate is typically within 3% from the center to the edge of the substrate. Experimental studies of thin films grown in the Y/Ba/Cu/O system have been carried out. The films have been characterized by Rutherford Backscattering Spectrometry and X-ray Diffraction. Results indicate c-axis oriented grains with pure 1:2:3 phase YBCO, good spatial uniformity, and a low degree of c-axis wobble. Experimental growth data is used in a gas phase and surface chemistry model to calculate sticking coefficients for yttrium oxide, barium oxide, and copper oxide on YBCO. In-situ FTIR and Coherent Gradient Sensing (CGS) analysis of growing films has been performed, yielding accurate substrate temperature, film thickness monitoring, and full-field, real-time curvature maps of the films. In addition, we have implemented CGS to obtain full-field in-situ images of local curvature during oxygenation and deoxygenation of YBCO films. An analysis of the oxygen diffusion is performed, and diffusivity constants are presented for a variety of temperature and film conditions.

The Effects of Ion-Assisted Deposition on the Mechanical, Physical, Chemical and Optical Properties of Magnesium Fluoride Thin Films.

NASA Astrophysics Data System (ADS)

Kennemore, Charles Milton, III

1992-01-01

This dissertation investigates the results of ion assisted deposition (IAD) on various properties of magnesium fluoride thin films deposited on room temperature substrates. MgF_2 films deposited in this manner have increased abrasion resistance and increased adhesion comparable to that found in films deposited at the usual substrate temperature of approximately 300 ^circC. IAD tends to drive the normal high tensile stress of non-IAD films to a more compressive state thereby reducing the overall stress. The IAD MgF _2 films have a higher index of refraction than non-IAD films, as high as 1.41, and the ultraviolet absorption edge in shifted to longer wavelengths beginning about 350 nm but no detectable absorption at visible wavelengths is seen in the films deposited with less than 250 eV bombardment energies. However, at higher IAD energies beginning at approximately 600 eV an absorption band is present in the red end of the visible spectrum making low energy bombardment the parameter of choice. Transmission electron microscopy and X-ray diffraction studies show that the IAD films have a more amorphous-like structure with fewer and smaller crystallites than non-IAD films deposited on either heated or unheated substrates. Rutherford backscattering spectroscopy (RBS) shows the bombarded films have fluorine depletion that roughly scales with the energy of bombardment with F:Mg ratios as low as 1.69 being found. Bombardment by fluorinated compounds, specifically C_2 F_6 and SF_6 , limit this depletion and in some instances super fluorinate the resulting compound. Additionally, RBS shows that IAD introduces a significant amount of oxygen throughout the film that is unaccountable as water take-up. X-ray photoelectron spectroscopy (XPS) indicates the presence of two compounds of oxygen that are attributed to MgO and Mg(OH)_2 or some oxy-fluoride complex similar to them and it is the introduction of these compounds which provide for the changes in the properties of IAD MgF_2 as compared to non-IAD films of MgF_2.

Texture and structure contribution to low-temperature plasticity enhancement of Mg-Al-Zn-Mn Alloy MA2-1hp after ECAP and annealing

NASA Astrophysics Data System (ADS)

Serebryany, V. N.; D'yakonov, G. S.; Kopylov, V. I.; Salishchev, G. A.; Dobatkin, S. V.

2013-05-01

Equal channel angular pressing (ECAP) in magnesium alloys due to severe plastic shear deformations provides both grain refinement and the slope of the initial basal texture at 40°-50° to the pressing direction. These changes in microstructure and texture contribute to the improvement of low-temperature plasticity of the alloys. Quantitative texture X-ray diffraction analysis and diffraction of backscattered electrons are used to study the main textural and structural factors responsible for enhanced low-temperature plasticity based on the example of magnesium alloy MA2-1hp of the Mg-Al-Zn-Mn system. The possible mechanisms of deformation that lead to this positive effect are discussed.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tumurugoti, P.; Clark, B.M.; Edwards, D.J.

Hollandite-rich multiphase waste form compositions processed by melt-solidification and spark plasma sintering (SPS) were characterized, compared, and validated for nuclear waste incorporation. Phase identification by x-ray diffraction (XRD) and electron back-scattered diffraction (EBSD) confirmed hollandite as the major phase present in these samples along with perovskite, pyrochlore and zirconolite. Distribution of selected elements observed by wavelength dispersive spectroscopy (WDS) maps indicated that Cs formed a secondary phase during SPS processing, which was considered undesirable. On the other hand, Cs partitioned into the hollandite phase in melt-processed samples. Further analysis of hollandite structure in melt-processed composition by selected area electron diffractionmore » (SAED) revealed ordered arrangement of tunnel ions (Ba/Cs) and vacancies, suggesting efficient Cs incorporation into the lattice.« less

Comparison Study on Additive Manufacturing (AM) and Powder Metallurgy (PM) AlSi10Mg Alloys

NASA Astrophysics Data System (ADS)

Chen, B.; Moon, S. K.; Yao, X.; Bi, G.; Shen, J.; Umeda, J.; Kondoh, K.

2018-02-01

The microstructural and mechanical properties of AlSi10Mg alloys fabricated by additive manufacturing (AM) and powder metallurgy (PM) routes were investigated and compared. The microstructures were examined by scanning electron microscopy assisted with electron-dispersive spectroscopy. The crystalline features were studied by x-ray diffraction and electron backscatter diffraction. Room-temperature tensile tests and Vickers hardness measurements were performed to characterize the mechanical properties. It was found that the AM alloy had coarser Al grains but much finer Si precipitates compared with the PM alloy. Consequently, the AM alloy showed more than 100% increment in strength and hardness compared with the PM alloy due to the presence of ultrafine forms of Si, while exhibiting moderate ductility.

The path for long range conduction in high J(sub c) TlBa2Ca2Cu3O(8+x) spray-pyrolyzed deposits

NASA Astrophysics Data System (ADS)

Kroeger, D. M.; Goyal, A.; Specht, E. D.; Wang, Z. L.; Tkaczyk, J. E.; Sutliff, J. A.; Deluca, J. A.

Grain boundary misorientations and local texture in polycrystalline TlBa2Ca2Cu3O(8+x) deposits prepared by thallination of spray-pyrolyzed precursor deposits on yttria-stabilized zirconia have been determined from transmission electron microscopy, electron backscatter diffraction patterns, and x ray diffraction. The deposits were polycrystalline, had small grains, and excellent c-axis alignment. The deposits contained colonies of grains with similar but not identical a-axis orientations. Most grain boundaries within a colony have small misorientation angles and should not be weak links. It is proposed that long range current flow occurs through a percolative network of small angle grain boundaries at colony intersections.

Growth of Ca{sub 2}MnO{sub 4} Ruddlesden-Popper structured thin films using combinatorial substrate epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lacotte, M.; David, A.; Pravarthana, D.

2014-12-28

The local epitaxial growth of pulsed laser deposited Ca{sub 2}MnO{sub 4} films on polycrystalline spark plasma sintered Sr{sub 2}TiO{sub 4} substrates was investigated to determine phase formation and preferred epitaxial orientation relationships (ORs) for isostructural Ruddlesden-Popper (RP) heteroepitaxy, further developing the high-throughput synthetic approach called Combinatorial Substrate Epitaxy (CSE). Both grazing incidence X-ray diffraction and electron backscatter diffraction patterns of the film and substrate were indexable as single-phase RP-structured compounds. The optimal growth temperature (between 650 °C and 800 °C) was found to be 750 °C using the maximum value of the average image quality of the backscattered diffraction patterns. Films grew inmore » a grain-over-grain pattern such that each Ca{sub 2}MnO{sub 4} grain had a single OR with the Sr{sub 2}TiO{sub 4} grain on which it grew. Three primary ORs described 47 out of 49 grain pairs that covered nearly all of RP orientation space. The first OR, found for 20 of the 49, was the expected RP unit-cell over RP unit-cell OR, expressed as [100][001]{sub film}||[100][001]{sub sub}. The other two ORs were essentially rotated from the first by 90°, with one (observed for 17 of 49 pairs) being rotated about the [100] and the other (observed for 10 of 49 pairs) being rotated about the [110] (and not exactly by 90°). These results indicate that only a small number of ORs are needed to describe isostructural RP heteroepitaxy and further demonstrate the potential of CSE in the design and growth of a wide range of complex functional oxides.« less

Overview of selected surrogate technologies for continuous suspended-sediment monitoring

USGS Publications Warehouse

Gray, J.R.; Gartner, J.W.

2006-01-01

Surrogate technologies for inferring selected characteristics of suspended sediments in surface waters are being tested by the U.S. Geological Survey and several partners with the ultimate goal of augmenting or replacing traditional monitoring methods. Optical properties of water such as turbidity and optical backscatter are the most commonly used surrogates for suspended-sediment concentration, but use of other techniques such as those based on acoustic backscatter, laser diffraction, digital photo-optic, and pressure-difference principles is increasing for concentration and, in some cases, particle-size distribution and flux determinations. The potential benefits of these technologies include acquisition of automated, continuous, quantifiably accurate data obtained with increased safety and at less expense. When suspended-sediment surrogate data meet consensus accuracy criteria and appropriate sediment-record computation techniques are applied, these technologies have the potential to revolutionize the way fluvial-sediment data are collected, analyzed, and disseminated.

Backscattered electron simulations to evaluate sensitivity against electron dosage of buried semiconductor features

NASA Astrophysics Data System (ADS)

Mukhtar, Maseeh; Thiel, Bradley

2018-03-01

In fabrication, overlay measurements of semiconductor device patterns have conventionally been performed using optical methods. Beginning with image-based techniques using box-in-box to the more recent diffraction-based overlay (DBO). Alternatively, use of SEM overlay is under consideration for in-device overlay. Two main application spaces are measurement features from multiple mask levels on the same surface and buried features. Modern CD-SEMs are adept at measuring overlay for cases where all features are on the surface. In order to measure overlay of buried features, HV-SEM is needed. Gate-to-fin and BEOL overlay are important use cases for this technique. A JMONSEL simulation exercise was performed for these two cases using 10 nm line/space gratings of graduated increase in depth of burial. Backscattered energy loss results of these simulations were used to calculate the sensitivity measurements of buried features versus electron dosage for an array of electron beam voltages.

Effect of prior deformation on microstructural development and Laves phase precipitation in high-chromium stainless steel.

PubMed

Hsiao, Z-W; Chen, D; Kuo, J-C; Lin, D-Y

2017-04-01

This study investigated the influence of deformation on precipitation behaviour and microstructure change during annealing. Here, the prior deformation of high-chromium stainless steel was tensile deformation of 3%, 6% and 10%, and the specimens were then annealed at 700˚C for 10 h. The specimens were subsequently analyzed using backscattered electron image and electron backscattering diffraction measurements with SEM. Compared with the deformation microstructure, the grains revealed no preferred orientation. The precipitates of TiN and NbC were formed homogenously in the grain interior and at grain boundaries after annealing. Fine Laves phase precipitates were observed in grains and along subgrain boundaries as the deformation increased. Furthermore, the volume fraction of Laves phase increased, but the average particle diameter of precipitate was reduced as the deformation increased. © 2017 The Authors Journal of Microscopy © 2017 Royal Microscopical Society.

Tackling pseudosymmetry problems in electron backscatter diffraction (EBSD) analyses of perovskite structures

NASA Astrophysics Data System (ADS)

Mariani, Elisabetta; Kaercher, Pamela; Mecklenburgh, Julian; Wheeler, John

2016-04-01

Perovskite minerals form an important mineral group that has applications in Earth science and emerging alternative energy technologies, however crystallographic quantification of these minerals with electron backscatter diffraction (EBSD) is not accurate due to pseudosymmetry problems. The silicate perovskite Bridgmanite, (Mg,Fe)SiO3, is understood to be the dominant phase in the Earth's lower mantle. Gaining insight into its physical and rheological properties is therefore vital to understand the dynamics of the Earth's deep interior. Rock deformation experiments on analogue perovskite phases, for example (Ca,Sr)TiO3, combined with quantitative microstructural analyses of the recovered samples by EBSD, yield datasets that can reveal what deformation mechanisms may dominate the flow of perovskite in the lower mantle. Additionally, perovskite structures have important technological applications as new, suitable cathodes for the operation of more efficient and environmentally-friendly solid oxide fuel cells (SOFC). In recent years they have also been recognised as a potential substitute for silicon in the next generation of photovoltaic cells for the construction of economic and energy efficient solar panels. EBSD has the potential to be a valuable tool for the study of crystal orientations achieved in perovskite substrates as crystal alignment has a direct control on the properties of these materials. However, perovskite structures currently present us with challenges during the automated indexing of Kikuchi bands in electron backscatter diffraction patterns (EBSPs). Such challenges are represented by the pseudosymmetric character of perovskites, where atoms are subtly displaced (0.005 nm to 0.05 nm) from their higher symmetry positions. In orthorhombic Pbnm perovskites, for example, pseudosymmetry may be evaluated from the c/a unit cell parameter ratio, which is very close to 1. Two main types of distortions from the higher symmetry structure are recognised: a tilt and a deformation of the anion octahedron. These distortions may occur together. Common misidentifications observed in EBSD data are [100] and [001] seen as equivalent solutions, whereby these dyad symmetry axes are misidentified as tetrad axes of the cubic symmetry. In this study we investigate methods that could be applied to the EBSP automated indexing algorithm to solve the pseudosymmetry problem in perovskite structures. Attention is given to subtle angular deviations between bands and to differences in pseudosymmetric Kikuchi patterns.

Coherent optical determination of the leaf angle distribution of corn

NASA Technical Reports Server (NTRS)

Ulaby, F. T. (Principal Investigator); Pihlman, M.

1981-01-01

A coherent optical technique for the diffraction analysis of an image is presented. Developments in radar remote sensing shows a need to understand plant geometry and its relationship to plant moisture, soil moisture, and the radar backscattering coefficient. A corn plant changes its leaf angle distribution, as a function of time, from a uniform distribution to one that is strongly vertical. It is shown that plant and soil moisture may have an effect on plant geometry.

Fiber vs Rolling Texture: Stress State Dependence for Cold-Drawn Wire

NASA Astrophysics Data System (ADS)

Zorina, M. A.; Karabanalov, M. S.; Stepanov, S. I.; Demakov, S. L.; Loginov, Yu. N.; Lobanov, M. L.

2018-02-01

The texture of the cold-drawn copper wire was investigated along the radius using electron backscatter diffraction. The complex fiber texture of the central region of the wire was considered as the rolling texture consisting of a set of preferred orientations. The texture of the periphery region was revealed to be similar to the shear texture. The orientation-dependent properties of the wire were proven to be determined by the texture of the near-surface layers.

Crack nucleation using combined crystal plasticity modelling, high-resolution digital image correlation and high-resolution electron backscatter diffraction in a superalloy containing non-metallic inclusions under fatigue

PubMed Central

Zhang, Tiantian; Britton, Ben; Shollock, Barbara; Dunne, Fionn

2016-01-01

A crystal plasticity finite-element model, which explicitly and directly represents the complex microstructures of a non-metallic agglomerate inclusion within polycrystal nickel alloy, has been developed to study the mechanistic basis of fatigue crack nucleation. The methodology is to use the crystal plasticity model in conjunction with direct measurement at the microscale using high (angular) resolution-electron backscatter diffraction (HR-EBSD) and high (spatial) resolution-digital image correlation (HR-DIC) strain measurement techniques. Experimentally, this sample has been subjected to heat treatment leading to the establishment of residual (elastic) strains local to the agglomerate and subsequently loaded under conditions of low cyclic fatigue. The full thermal and mechanical loading history was reproduced within the model. HR-EBSD and HR-DIC elastic and total strain measurements demonstrate qualitative and quantitative agreement with crystal plasticity results. Crack nucleation by interfacial decohesion at the nickel matrix/agglomerate inclusion boundaries is observed experimentally, and systematic modelling studies enable the mechanistic basis of the nucleation to be established. A number of fatigue crack nucleation indicators are also assessed against the experimental results. Decohesion was found to be driven by interface tensile normal stress alone, and the interfacial strength was determined to be in the range of 1270–1480 MPa. PMID:27279765

Crack nucleation using combined crystal plasticity modelling, high-resolution digital image correlation and high-resolution electron backscatter diffraction in a superalloy containing non-metallic inclusions under fatigue

NASA Astrophysics Data System (ADS)

Zhang, Tiantian; Jiang, Jun; Britton, Ben; Shollock, Barbara; Dunne, Fionn

2016-05-01

A crystal plasticity finite-element model, which explicitly and directly represents the complex microstructures of a non-metallic agglomerate inclusion within polycrystal nickel alloy, has been developed to study the mechanistic basis of fatigue crack nucleation. The methodology is to use the crystal plasticity model in conjunction with direct measurement at the microscale using high (angular) resolution-electron backscatter diffraction (HR-EBSD) and high (spatial) resolution-digital image correlation (HR-DIC) strain measurement techniques. Experimentally, this sample has been subjected to heat treatment leading to the establishment of residual (elastic) strains local to the agglomerate and subsequently loaded under conditions of low cyclic fatigue. The full thermal and mechanical loading history was reproduced within the model. HR-EBSD and HR-DIC elastic and total strain measurements demonstrate qualitative and quantitative agreement with crystal plasticity results. Crack nucleation by interfacial decohesion at the nickel matrix/agglomerate inclusion boundaries is observed experimentally, and systematic modelling studies enable the mechanistic basis of the nucleation to be established. A number of fatigue crack nucleation indicators are also assessed against the experimental results. Decohesion was found to be driven by interface tensile normal stress alone, and the interfacial strength was determined to be in the range of 1270-1480 MPa.

Crystallographic orientation mapping with an electron backscattered diffraction technique in (Bi, Pb)2Sr2Ca2Cu3O10 superconductor tapes

NASA Astrophysics Data System (ADS)

Tan, T. T.; Li, S.; Oh, J. T.; Gao, W.; Liu, H. K.; Dou, S. X.

2001-02-01

It is believed that grain boundaries act as weak links in limiting the critical current density (Jc) of bulk high-Tc superconductors. The weak-link problem can be greatly reduced by elimination or minimization of large-angle grain boundaries. It has been reported that the distribution of the Jc in (Bi, Pb)2Sr2Ca2Cu3O10+x (Bi2223) superconductor tapes presents a parabolic relationship in the transverse cross section of the tapes, with the lowest currents occurring at the centre of the tapes. It was proposed that the Jc distribution is strongly dependent on the local crystallographic orientation distribution of the Bi2223 oxides. However, the local three-dimensional crystallographic orientation distribution of Bi2223 crystals in (Bi, Pb)2Sr2Ca2Cu3O10+x superconductor tapes has not yet been experimentally determined. In this work, the electron backscattered diffraction technique was employed to map the crystallographic orientation distribution, determine the misorientation of grain boundaries and also map the misorientation distribution in Bi2223 superconductor tapes. Through crystallographic orientation mapping, the relationship between the crystallographic orientation distribution, the boundary misorientation distribution and the fabrication parameters may be understood. This can be used to optimize the fabrication processes thus increasing the critical current density in Bi2223 superconductor tapes.

Electron backscatter diffraction studies of focused ion beam induced phase transformation in cobalt

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jones, H.G., E-mail: helen.jones@npl.co.uk

A focused ion beam microscope was used to induce cubic to hexagonal phase transformation in a cobalt alloy, of similar composition to that of the binder phase in a hardmetal, in a controlled manner at 0°, 45° and 80° ion incident angles. The cobalt had an average grain size of ~ 20 μm, allowing multiple orientations to be studied, exposed to a range of doses between 6 × 10{sup 7} and 2 × 10{sup 10} ions/μm{sup 2}. Electron backscatter diffraction (EBSD) was used to determine the original and induced phase orientations, and area fractions, before and after the ion beammore » exposure. On average, less phase transformation was observed at higher incident angles and after lower ion doses. However there was an orientation effect where grains with an orientation close to (111) planes were most susceptible to phase transformation, and (101) the least, where grains partially and fully transformed at varying ion doses. - Highlights: •Ion-induced phase change in FCC cobalt was observed at multiple incidence angles. •EBSD was used to study the relationship between grain orientation and transformation. •Custom software analysed ion dose and phase change with respect to grain orientation. •A predictive capability of ion-induced phase change in cobalt was enabled.« less

A brief history of Lord Rutherford's radium

PubMed Central

Todd, Neil

2014-01-01

In this paper I give a brief summary of what is known about the acquisition, use and fate of the radium sources that were in the possession of Lord Rutherford during his lifetime. The account is written in two parts, corresponding to the periods from the discovery of radium in 1898 until his death in 1937 and then from 1937 until recent times. The history of Rutherford's radium closely shadows the history of radioactivity, the evolution of nuclear physics, the race for the bomb, and the development of the nuclear industry. PMID:25254280

Study of iodine migration in zirconia using stable and radioactive ion implantation

NASA Astrophysics Data System (ADS)

Chevarier, N.; Brossard, F.; Chevarier, A.; Crusset, D.; Moncoffre, N.

1998-03-01

The large uranium fission cross section leading to iodine and the behaviour of this element in the cladding tube during energy production and afterwards during waste storage is a crucial problem, especially for 129I which is a very long half-life isotope ( T = 1.59 × 10 7yr). Since a combined external and internal oxidation of the zircaloy cladding tube occurs during the reactor processing, iodine diffusion parameters in zirconia are needed. In order to obtain these data, stable iodine atoms were first introduced by ion implantation into zirconia with an energy of 200 keV and a dose equal to 8 × 10 15at cm -2. Diffusion profiles were measured using 3 MeV alpha-particle Rutherford Backscattering Spectrometry at each step of the annealing procedure between 700°C and 900°C. In such experiments a reduced iodine concentration was observed, which correlated to a diffusion-like process. Similar analysis has been performed using radioactive 131I implanted at a very low dose of 10 9 at cm -2. In this case the iodine release is deduced from gamma-ray spectroscopy measurements. The results are discussed in this paper.

Single cell elemental analysis using nuclear microscopy

NASA Astrophysics Data System (ADS)

Ren, M. Q.; Thong, P. S. P.; Kara, U.; Watt, F.

1999-04-01

The use of Particle Induced X-ray Emission (PIXE), Rutherford Backscattering Spectrometry (RBS) and Scanning Transmission Ion Microscopy (STIM) to provide quantitative elemental analysis of single cells is an area which has high potential, particularly when the trace elements such as Ca, Fe, Zn and Cu can be monitored. We describe the methodology of sample preparation for two cell types, the procedures of cell imaging using STIM, and the quantitative elemental analysis of single cells using RBS and PIXE. Recent work on single cells at the Nuclear Microscopy Research Centre,National University of Singapore has centred around two research areas: (a) Apoptosis (programmed cell death), which has been recently implicated in a wide range of pathological conditions such as cancer, Parkinson's disease etc, and (b) Malaria (infection of red blood cells by the malaria parasite). Firstly we present results on the elemental analysis of human Chang liver cells (ATTCC CCL 13) where vanadium ions were used to trigger apoptosis, and demonstrate that nuclear microscopy has the capability of monitoring vanadium loading within individual cells. Secondly we present the results of elemental changes taking place in individual mouse red blood cells which have been infected with the malaria parasite and treated with the anti-malaria drug Qinghaosu (QHS).

Thermoelectric properties of Zn4Sb3/CeFe(4-x)CoxSb12 nano-layered superlattices modified by MeV Si ion beam

NASA Astrophysics Data System (ADS)

Budak, S.; Guner, S.; Minamisawa, R. A.; Muntele, C. I.; Ila, D.

2014-08-01

We prepared multilayers of superlattice thin film system with 50 periodic alternating nano-layers of semiconducting half-Heusler β-Zn4Sb3 and skutterudite CeFe2Co2Sb12 compound thin films using ion beam assisted deposition (IBAD) with Au layers deposited on both sides as metal contacts. The deposited multilayer thin films have alternating layers about 5 nm thick. The total thickness of the multilayer system is 275 nm. The superlattices were then bombarded by 5 MeV Si ion at six different fluences to form nano-cluster structures. The film thicknesses and composition were monitored by Rutherford backscattering spectrometry (RBS) before and after MeV ion bombardment. We have measured the thermoelectric efficiency, Figure of Merit ZT, of the fabricated device by measuring the cross plane thermal conductivity by the 3rd harmonic (3ω) method, the cross plane Seebeck coefficient, and the electrical conductivity using the van der Pauw method before and after the MeV ion bombardments. We reached the remarkable thermoelectric Figure of Merit results at optimal fluences.

Structural evaluation of reduced graphene oxide in graphene oxide during ion irradiation: X-ray absorption spectroscopy and in-situ sheet resistance studies

NASA Astrophysics Data System (ADS)

Saravanan, K.; Jayalakshmi, G.; Suresh, K.; Sundaravel, B.; Panigrahi, B. K.; Phase, D. M.

2018-03-01

We report the structural evolution of reduced graphene oxide (rGO) in graphene oxide (GO) flakes during 1 MeV Si+ ion irradiation. In-situ electrical resistivity measurements facilitate monitoring the sheet resistance with the increase in the fluence. The electrical sheet resistance of the GO flake shows the exponential decay behaviour with the increasing ion fluence. Raman spectra of the GO flake reveal the increase in the ID/IG ratio, indicating restoration of the sp2 network upon irradiation. The C/O ratio estimated from resonant Rutherford backscattering spectrometry analysis directly evidenced the reduction of oxygen moieties upon irradiation. C K-edge X-ray absorption near edge structure spectra reveal the restoration of C=C sp2-hybridized carbon atoms and the removal of oxygen-containing functional groups in the GO flake. STM data reveal the higher conductance in the rGO regime in comparison with the regime, where the oxygen functional groups are present. The experimental investigation demonstrates that the ion irradiation can be employed for efficient reduction of GO with tunable electrical and structural properties.