Synthesis of [(Ca1-xSrx)2-2y](Ti2-2yLi2y)Si2yO6-y Ceramic and its Application in Efficient Plasma Decomposition of CO2

NASA Astrophysics Data System (ADS)

Li, Ruixing; Tang, Qing; Yin, Shu; Sato, Tsugio

According to both the first principle and materials chemistry, a method for fabricating [(Ca1-xSrx)2-2y](Ti2-2yLi2y)Si2yO6-y ceramic was investigated. It was considered that the sintering was promoted by self-accelerated diffusion due to the formation of point defects caused by doping with Li2Si2O5. Consequently, a concept of non-stoichiometrically activated sintering, which was enhanced by point defects without the help of a grain boundary phase, was systematically studied in the Ca1-xSrxTiO3-Li2Si2O5 system. The mechanical and dielectric properties of [(Ca1-xSrx)2-2y](Ti2-2yLi2y)Si2yO6-y were greatly enhanced by adding Li2Si2O5. To improve CO2 decomposition activity, [(Ca1-xSrx)2-2y](Ti2-2yLi2y)Si2yO6-y, which possesses both high permittivity and high dielectric strength was used as a dielectric barrier to decompose CO2 by dielectric barrier discharges (DBDs) plasma without using any catalyst and auxiliary substance. It successfully generated DBDs plasma and the CO2 conversion was much higher than that using an alumina or a silica glass barrier which was widely used as the dielectric barrier in previous studies.

Predictions of Microstreamer Properties in Dielectric Barrier Discharges

NASA Astrophysics Data System (ADS)

Xu, Xudong; Kushner, Mark J.

1997-10-01

Dielectric Barrier Discharges (DBD) are being investigated for plasma remediation of toxic gases. The microstreamers in DBD's (10s - 100s μm's diameter) are terminated by dielectric charging which removes voltage from the gap. The microstreamers grow by radial diffusion into regions of high electric field and subsequent avalanche. 1-d and 2-d plasma hydrodynamics models have been developed to investigate these processes in DBDs sustained in air, nonattaching gases (Ar, N_2) and highly attaching gas mixtures (10s to 100s ppm of CCl_4). We found that microstreamers continue to radially expand as long as there is sufficient applied voltage in the absence of dielectric charging in advance of the core of the microstreamer. This observation implies that there is a finite surface conductivity which allows radial flow of current and subsequent charging of the dielectric. Predictions for microstreamer radii using this process agree well with experiments.(J. Coogan, Trans. Plasma Sci. 24, 91 (1996)) We also found that in electronegative gases, voltage collapes in the core of the streamer results in cooling and rapid attachment of electrons, creating a core which is largely converted to a negative ion-positive ion plasma, surrounded by an avalanching shell of hot electrons.

Numerical analysis of similarity of barrier discharges in the 0.95 Ne/0.05 Xe mixture

DOE Office of Scientific and Technical Information (OSTI.GOV)

Avtaeva, S. V.; Kulumbaev, E. B.

2009-04-15

Established dynamic regimes of similar (with a scale factor of 10) barrier discharges in the 0.95 Ne/0.05 Xe mixture are simulated in a one-dimensional drift-diffusion model. The similarity is examined of barrier discharges excited in gaps of lengths 0.4 and 4 mm at gas pressures of 350 and 35 Torr and dielectric layer thicknesses of 0.2 and 2 mm, the frequencies of the 400-V ac voltage applied to the discharge electrodes being 100 and 10 kHz, respectively.

Characteristics and applications of diffuse discharge of water electrode in air

NASA Astrophysics Data System (ADS)

Wenzheng, LIU; Tahan, WANG; Xiaozhong, CHEN; Chuanlong, MA

2018-01-01

Plasma water treatment technology, which aims to produce strong oxidizing reactive particles that act on the gas-liquid interface by way of discharging, is used to treat the organic pollutants that do not degrade easily in water. This paper presents a diffuse-discharge plasma water treatment method, which is realized by constructing a conical air gap through an uneven medium layer. The proposed method uses water as one electrode, and a dielectric barrier discharge electrode is constructed by using an uneven dielectric. The electric field distribution in the discharge space will be uneven, wherein the long gap electric field will have a smaller intensity, while the short one will have a larger intensity. A diffuse glow discharge is formed in the cavity. With this type of plasma water treatment equipment, a methyl orange solution with a concentration of 10 mg l-1 was treated, and the removal rate was found to reach 88.96%.

A compact nanosecond pulse generator for DBD tube characterization.

PubMed

Rai, S K; Dhakar, A K; Pal, U N

2018-03-01

High voltage pulses of very short duration and fast rise time are required for generating uniform and diffuse plasma under various operating conditions. Dielectric Barrier Discharge (DBD) has been generated by high voltage pulses of short duration and fast rise time to produce diffuse plasma in the discharge gap. The high voltage pulse power generators have been chosen according to the requirement for the DBD applications. In this paper, a compact solid-state unipolar pulse generator has been constructed for characterization of DBD plasma. This pulsar is designed to provide repetitive pulses of 315 ns pulse width, pulse amplitude up to 5 kV, and frequency variation up to 10 kHz. The amplitude of the output pulse depends on the dc input voltage. The output frequency has been varied by changing the trigger pulse frequency. The pulsar is capable of generating pulses of positive or negative polarity by changing the polarity of pulse transformer's secondary. Uniform and stable homogeneous dielectric barrier discharge plasma has been produced successfully in a xenon DBD tube at 400-mbar pressure using the developed high voltage pulse generator.

A compact nanosecond pulse generator for DBD tube characterization

NASA Astrophysics Data System (ADS)

Rai, S. K.; Dhakar, A. K.; Pal, U. N.

2018-03-01

High voltage pulses of very short duration and fast rise time are required for generating uniform and diffuse plasma under various operating conditions. Dielectric Barrier Discharge (DBD) has been generated by high voltage pulses of short duration and fast rise time to produce diffuse plasma in the discharge gap. The high voltage pulse power generators have been chosen according to the requirement for the DBD applications. In this paper, a compact solid-state unipolar pulse generator has been constructed for characterization of DBD plasma. This pulsar is designed to provide repetitive pulses of 315 ns pulse width, pulse amplitude up to 5 kV, and frequency variation up to 10 kHz. The amplitude of the output pulse depends on the dc input voltage. The output frequency has been varied by changing the trigger pulse frequency. The pulsar is capable of generating pulses of positive or negative polarity by changing the polarity of pulse transformer's secondary. Uniform and stable homogeneous dielectric barrier discharge plasma has been produced successfully in a xenon DBD tube at 400-mbar pressure using the developed high voltage pulse generator.

Dual frequency diffuse dielectric barrier discharge in atmospheric-pressure air-like gas mixture for thin film deposition

NASA Astrophysics Data System (ADS)

Liu, Yaoge; Starostin, Serguei; Welzel, Stefan; van de Sanden, M. C. M.; de Vries, Hindrik; Fom Institute-Differ Team; Eindhoven University Of Technology Team; Fujifilm Manufacturing Europe B. v. Team

2016-09-01

A dual frequency (DF) diffuse discharge was obtained in an atmospheric-pressure dielectric barrier discharge reactor in air-like gas mixtures. By adding a radio frequency (RF) voltage to a low frequency (LF) voltage, we aim to increase the plasma power density. In this study, the discussion is mainly focused on the discharge characteristics and the thin film deposition. According to the spatio-temporal emission, the discharge shows a glow-like structure with both LF and DF voltages. By fitting the spectral lines of the second positive system of N2, the gas temperature was estimated which does not obviously increase with the extra RF signal. Moreover, SiO2-like film was deposited from TEOS using the DF power supply. Thin film properties such as surface morphology, microstructure and stoichiometry were analyzed by AFM, FTIR and XPS, respectively. Because of the higher plasma power density, the DF power supply can be an efficient approach to improve the properties and to increase the throughput of the thin film deposition.

Ferroelectric/ferrimagnetic composite ceramics with depressed interfacial reaction and low dielectric loss

NASA Astrophysics Data System (ADS)

Zheng, Hui; Weng, Wenjian; Han, Gaorong; Du, Piyi

2014-10-01

(1-x)BaTiO3/xNi0.5Zn0.5Fe2O4 (NZFO) ferroelectric/ferrimagnetic composite ceramics with restricted interfacial reaction were prepared by adopting fine NZFO precursors synthesized by combustion method. The dielectric dispersion, loss, and conductivity are significantly reduced at most compositions, particularly at concentrations below the percolation threshold. At x = 0.3, a frequency-stable permittivity of 2300 and a low loss of 0.04 at 1 kHz is realized. The recovery of the dielectric/electric properties is attributed to the interfacial amorphous phase introduced by the fine NZFO precursors, which can act as barrier for ionic inter-diffusion between the two phases and hopping conduction among ferrites.

Flow control of an elongated jet in cross-flow: Film cooling effectiveness enhancement using surface dielectric barrier discharge plasma actuator

NASA Astrophysics Data System (ADS)

Audier, P.; Fénot, M.; Bénard, N.; Moreau, E.

2016-02-01

The case presented here deals with plasma flow control applied to a cross-flow configuration, more specifically to a film cooling system. The ability of a plasma dielectric barrier discharge actuator for film cooling effectiveness enhancement is investigated through an experimental set-up, including a film injection from an elongated slot into a thermally uniform cross-flow. Two-dimensional particle image velocimetry and infrared-thermography measurements are performed for three different blowing ratios of M = 0.4, 0.5, and 1. Results show that the effectiveness can be increased when the discharge is switched on, as predicted by the numerical results available in literature. Whatever the blowing ratio, the actuator induces a deflection of the jet flow towards the wall, increases its momentum, and delays its diffusion in the cross-flow.

Two-dimensional simulation of argon dielectric barrier discharge excited by a Gaussian voltage at atmospheric pressure

NASA Astrophysics Data System (ADS)

Xu, Yonggang; Wang, Jing; Li, Jing; Lei, Bingying; Tang, Jie; Wang, Yishan; Li, Yongfang; Zhao, Wei; Duan, Yixiang

2017-04-01

A two-dimensional self-consistent fluid model was employed to investigate the spatiotemporal characteristics of discharges in atmospheric pressure argon (Ar) dielectric barrier discharge driven by a Gaussian voltage. The simulation results show that a discharge with multiple current pulses occurs each half-cycle in the gas gap. A transition from the Townsend mode to the glow mode is observed with the increasing applied voltage each half-cycle at a lower driving frequency (7.5 kHz). It is also found that the glow mode survives all the discharge phases at a higher driving frequency (12.5 kHz and 40 kHz). The change in the discharge mode with the driving frequency mainly lies in the fact that a lot of charged particles created in the discharge gap have no enough time to drift and diffuse around, and then these particles are assembled in the discharge space at higher frequency. Additionally, the spatial distributions of the electron density indicate that a center-advantage discharge is ignited at the driving frequencies of interest, resulting in the radial non-uniformity of discharge because of the edge effects. However, this overall non-uniformity is weakened with the driving frequency increased to 40 kHz, at which concentric ring patterns are observed. These distinct behaviors are mainly attributed to the fact that many charged particles generated are trapped in the gas gap and then accumulated to make the extension along the radial direction due to the charged particles transport and diffusion, and that the effective overlapping of a large number of avalanches induced by the increased "seed" electron density with the driving frequency. Meanwhile, the surface charged particles accumulated on the dielectric barriers are also shown to play a role in the formation of the discharge structure.

A diffuse argon plume generated by a longitudinal slit jet equipped with a quadri-electrode barrier discharge

NASA Astrophysics Data System (ADS)

Li, Xuechen; Chu, Jingdi; Zhang, Qi; Zhang, Panpan; Jia, Pengying; Dong, Lifang

2018-04-01

A diffuse argon plume at atmospheric pressure is generated downstream of a longitudinal slit jet equipped with a dielectric barrier discharge in a quadri-electrode configuration. Results indicate that both the plume length and the spectral line intensities increase with the increase in the peak voltage. With fast photography it is found that there is a clear difference for discharges with different polarities. The positive discharge is composed of nonuniform branching filaments; however, it is fairly uniform for the negative discharge. Due to the charge overflow of the intra-electrode discharge, the streamer mechanism is involved in the plume discharge. In fact, the positive discharge and the negative one correspond to a cathode-directed streamer and an anode-directed streamer, respectively. The formation mechanisms of the branching filaments and the diffuse background are discussed at last.

Influence of grid resolution in fluid-model simulation of nanosecond dielectric barrier discharge plasma actuator

NASA Astrophysics Data System (ADS)

Hua, Weizhuo; Fukagata, Koji

2018-04-01

Two-dimensional numerical simulation of a surface dielectric barrier discharge (SDBD) plasma actuator, driven by a nanosecond voltage pulse, is conducted. A special focus is laid upon the influence of grid resolution on the computational result. It is found that the computational result is not very sensitive to the streamwise grid spacing, whereas the wall-normal grid spacing has a critical influence. In particular, the computed propagation velocity changes discontinuously around the wall-normal grid spacing about 2 μm due to a qualitative change of discharge structure. The present result suggests that a computational grid finer than that was used in most of previous studies is required to correctly capture the structure and dynamics of streamer: when a positive nanosecond voltage pulse is applied to the upper electrode, a streamer forms in the vicinity of upper electrode and propagates along the dielectric surface with a maximum propagation velocity of 2 × 108 cm/s, and a gap with low electron and ion density (i.e., plasma sheath) exists between the streamer and dielectric surface. Difference between the results obtained using the finer and the coarser grid is discussed in detail in terms of the electron transport at a position near the surface. When the finer grid is used, the low electron density near the surface is caused by the absence of ionization avalanche: in that region, the electrons generated by ionization is compensated by drift-diffusion flux. In contrast, when the coarser grid is used, underestimated drift-diffusion flux cannot compensate the electrons generated by ionization, and it leads to an incorrect increase of electron density.

Electron density and temperature in an atmospheric-pressure helium diffuse dielectric barrier discharge from kHz to MHz

NASA Astrophysics Data System (ADS)

Boisvert, J.-S.; Stafford, L.; Naudé, N.; Margot, J.; Massines, F.

2018-03-01

Diffuse dielectric barrier discharges are generated over a very wide range of frequencies. According to the targeted frequency, the glow, Townsend-like, hybrid, Ω and RF-α modes are sustained. In this paper, the electrical characterization of the discharge cell together with an electrical model are used to estimate the electron density from current and voltage measurements for excitation frequencies ranging from 50 kHz to 15 MHz. The electron density is found to vary from 1014 to 1017 m-3 over this frequency range. In addition, a collisional-radiative model coupled with optical emission spectroscopy is used to evaluate the electron temperature (assuming Maxwellian electron energy distribution function) in the same conditions. The time and space-averaged electron temperature is found to be about 0.3 eV in both the low-frequency and high-frequency ranges. However, in the medium-frequency range, it reaches almost twice this value as the discharge is in the hybrid mode. The hybrid mode is similar to the atmospheric-pressure glow discharge usually observed in helium DBDs at low frequency with the major difference being that the plasma is continuously sustained and is characterized by a higher power density.

Infrared gas phase study on plasma-polymer interactions in high-current diffuse dielectric barrier discharge

NASA Astrophysics Data System (ADS)

Liu, Y.; Welzel, S.; Starostin, S. A.; van de Sanden, M. C. M.; Engeln, R.; de Vries, H. W.

2017-06-01

A roll-to-roll high-current diffuse dielectric barrier discharge at atmospheric pressure was operated in air and Ar/N2/O2 gas mixtures. The exhaust gas from the discharge was studied using a high-resolution Fourier-transform infrared spectrometer in the range from 3000 to 750 cm-1 to unravel the plasma-polymer interactions. The absorption features of HxNyOz, COx, and HCOOH (formic acid) were identified, and the relative densities were deduced by fitting the absorption bands of the detected molecules. Strong interactions between plasma and polymer (Polyethylene-2,6-naphthalate, or PEN) in precursor-free oxygen-containing gas mixtures were observed as evidenced by a high COx production. The presence of HCOOH in the gas effluent, formed through plasma-chemical synthesis of COx, turns out to be a sensitive indicator for etching. By adding tetraethylorthosilicate precursor in the plasma, dramatic changes in the COx production were measured, and two distinct deposition regimes were identified. At high precursor flows, a good agreement with the precursor combustion and the COx production was observed, whereas at low precursor flows an etching-deposition regime transpires, and the COx production is dominated by polymer etching.

Dielectric Barrier Discharge Plasma-Induced Photocatalysis and Ozonation for the Treatment of Wastewater

NASA Astrophysics Data System (ADS)

Mok, Young Sun; Jo, Jin-Oh; Lee, Heon-Ju

2008-02-01

The physicochemical processes of dielectric barrier discharge (DBD) such as in-situ formation of chemically active species and emission of ultraviolet (UV)/visible light were utilized for the treatment of a simulated wastewater formed with Acid Red 4 as the model organic contaminant. The chemically active species (mostly ozone) produced in the DBD reactor were well distributed in the wastewater using a porous gas diffuser, thereby increasing the gas-liquid contact area. For the purpose of making the best use of the light emission, a titanium oxide-based photocatalyst was incorporated in the wastewater treating system. The experimental parameters chosen were the voltage applied to the DBD reactor, the initial pH of the wastewater, and the concentration of hydrogen peroxide added to the wastewater. The results have clearly shown that the present system capable of degrading organic contaminants in two ways (photocatalysis and ozonation) may be a promising wastewater treatment technology.

Dielectric Barrier Discharges: Pulsed Breakdown, Electrical Characterization and Chemistry

DTIC Science & Technology

2013-06-01

DIELECTRIC BARRIER DISCHARGES : PULSED BREAKDOWN, ELECTRICAL CHARACTERIZATION AND CHEMISTRY  R. Brandenburg, H. Höft, T. Hoder, A. Pipa, R...for pulsed driven Dielectric Barrier Discharges (DBDs) in particular. Fast electrical, optical and spectroscopic methods enable the study of...2. REPORT TYPE N/A 3. DATES COVERED - 4. TITLE AND SUBTITLE Dielectric Barrier Discharges : Pulsed Breakdown, Electrical Characterization

Diagnostics of pre-breakdown light emission in a helium coplanar barrier discharge: the presence of neutral bremsstrahlung

NASA Astrophysics Data System (ADS)

Navrátil, Zdeněk; Morávek, Tomáš; Ráheľ, Jozef; Čech, Jan; Lalinský, Ondřej; Trunec, David

2017-05-01

Weak light emission (˜10-3 of active discharge signal; average count rate ˜ 1 photon s-1 nm-1) associated with surface charge relaxation during the dark phase of a helium diffuse coplanar barrier discharge was studied by optical emission spectroscopy, using a technique of phase-resolved single photon counting. The optical emission spectra of the dark phase contained luminescent bands of the dielectrics used (Al2O3, AlN) and spectral lines from the gas constituents (OH*, {{{N}}}2* , {{{N}}}2+* , He*, He{}2* , O*). During the charge relaxation event, a broad continuum appeared in the optical emission spectra, consisting of bremsstrahlung radiation and amplified luminescence of the dielectric barrier. The analysis presented suggests that the bremsstrahlung radiation originated from slow electrons colliding with neutral helium atoms. The fitting procedure we developed reproduced well the observed shape of the continuum. Moreover, it provided a method for the determination of electric field strength in the discharge during this particular phase. The electric field reached 1 kV cm-1 during the charge relaxation event.

Circularly polarized antennas for active holographic imaging through barriers

DOEpatents

McMakin, Douglas L [Richland, WA; Severtsen, Ronald H [Richland, WA; Lechelt, Wayne M [West Richland, WA; Prince, James M [Kennewick, WA

2011-07-26

Circularly-polarized antennas and their methods of use for active holographic imaging through barriers. The antennas are dielectrically loaded to optimally match the dielectric constant of the barrier through which images are to be produced. The dielectric loading helps to remove barrier-front surface reflections and to couple electromagnetic energy into the barrier.

Electrolyte creepage barrier for liquid electrolyte fuel cells

DOEpatents

Li, Jian [Alberta, CA; Farooque, Mohammad [Danbury, CT; Yuh, Chao-Yi [New Milford, CT

2008-01-22

A dielectric assembly for electrically insulating a manifold or other component from a liquid electrolyte fuel cell stack wherein the dielectric assembly includes a substantially impermeable dielectric member over which electrolyte is able to flow and a barrier adjacent the dielectric member and having a porosity of less than 50% and greater than 10% so that the barrier is able to measurably absorb and chemically react with the liquid electrolyte flowing on the dielectric member to form solid products which are stable in the liquid electrolyte. In this way, the barrier inhibits flow or creepage of electrolyte from the dielectric member to the manifold or component to be electrically insulated from the fuel cell stack by the dielectric assembly.

Atmospheric-pressure diffuse dielectric barrier discharges in Ar/O2 gas mixture using 200 kHz/13.56 MHz dual frequency excitation

NASA Astrophysics Data System (ADS)

Liu, Y.; Starostin, S. A.; Peeters, F. J. J.; van de Sanden, M. C. M.; de Vries, H. W.

2018-03-01

Atmospheric-pressure diffuse dielectric barrier discharges (DBDs) were obtained in Ar/O2 gas mixture using dual-frequency (DF) excitation at 200 kHz low frequency (LF) and 13.56 MHz radio frequency (RF). The excitation dynamics and the plasma generation mechanism were studied by means of electrical characterization and phase resolved optical emission spectroscopy (PROES). The DF excitation results in a time-varying electric field which is determined by the total LF and RF gas voltage and the spatial ion distribution which only responds to the LF component. By tuning the amplitude ratio of the superimposed LF and RF signals, the effect of each frequency component on the DF discharge mechanism was analysed. The LF excitation results in a transient plasma with the formation of an electrode sheath and therefore a pronounced excitation near the substrate. The RF oscillation allows the electron trapping in the gas gap and helps to improve the plasma uniformity by contributing to the pre-ionization and by controlling the discharge development. The possibility of temporally modifying the electric field and thus the plasma generation mechanism in the DF discharge exhibits potential applications in plasma-assisted surface processing and plasma-assisted gas phase chemical conversion.

Influence of the solid dielectric over the electric field from the ozone cell gap with double dielectric barrier

NASA Astrophysics Data System (ADS)

Ganea, I.

2017-05-01

The distilled water has the advantage of high value dielectric constant (ε = 81) in relation to ceramic glass materials, currently used for constructing the dielectric barrier. It was necessary to build a thin-walled enclosure of solid insulating material that contain distilled water to achieve a dielectric barrier. This was necessary to avoid exposing the liquid to the direct action of ozone. Dielectric permittivity of the solid dielectric material and the thickness of these walls have diminished the value of the electric field form the gaseous gap of the ozone cell compared to the case with the dielectric barrier from distilled water. The author of this work deduced theoretical relationships that express the values of the electric field intensity in the gap of the cell with two dielectrics and compared them with similar relationships of the intensity of the electric field from the gap of the ozone cell with one dielectric. In this work the author presenting experimental results which confirm the theoretical deducting regarding the use of the solid dielectric as enclosure for the liquid dielectric.

Characterization and tailoring of porous sol-gel dielectrics for interlayer dielectric applications

NASA Astrophysics Data System (ADS)

Rogojevic, Svetlana

A new, better insulator is needed to replace SiO2 in the next generation of microelectronic devices. The dielectric constant of porous materials can be tailored by adjusting the porosity, so that their use can be extended to more than one generation of devices. Silica xerogel films with wide range of porosities (25 90%) are fabricated by varying the rate of solvent evaporation during spin-coating. Even better porosity control is achieved by using mixtures of high and low boiling point solvents, and allowing one solvent to evaporate completely during spin-coating. The quartz crystal microbalance method was employed to measure the traces of moisture adsorbed in xerogel films of varying porosities. By employing two different surface modifiers, it is demonstrated that the level of hydrophobicity is a function of surface chemistry, and can be tailored by using a suitable surface modifier. To investigate the interaction of xerogels with other materials, metallic layers were deposited on xerogel films, and subsequently annealed. When annealed in the ambient with trace amount of oxygen, Ta and Cu films undergo morphological instabilities. These morphological changes may lead to the erroneous interpretation of the Rutherford backscattering spectra as metal diffusion. When the samples are capped with a Si3N4 layer, Cu and Ta do not show diffusion through xerogel when annealed up to 650°C. Bias-temperature stressing was conducted in order to assess Cu drift through xerogel in the presence of an electric field. Contrary to what is normally observed with other dielectrics, the leakage current and C-V curve shifts were larger with an Al electrode than with a Cu electrode. This indicates that the surface modification of xerogel can contribute to the smaller charge injection from the Cu/xerogel interface, or to the inhibition of Cu diffusion, thus offering a possibility of designing future monolayer diffusion barriers for porous materials. Two possible paths of mass transfer in porous solids are identified: bulk and surface diffusion. Three driving forces are also analyzed: concentration gradient, electric field, and curvature gradient. The model of diffusion through porous solids shows the effects of the electric field, the solid network thickness, porosity, surface and bulk diffusivity. The model is a useful tool for designing and interpreting the experiments, in order to assess the role of surface diffusion in porous materials.

Numerical investigation of dielectric barrier discharges

NASA Astrophysics Data System (ADS)

Li, Jing

1997-12-01

A dielectric barrier discharge (DBD) is a transient discharge occurring between two electrodes in coaxial or planar arrangements separated by one or two layers of dielectric material. The charge accumulated on the dielectric barrier generates a field in a direction opposite to the applied field. The discharge is quenched before an arc is formed. It is one of the few non-thermal discharges that operates at atmospheric pressure and has the potential for use in pollution control. In this work, a numerical model of the dielectric barrier discharge is developed, along with the numerical approach. Adaptive grids based on the charge distribution is used. A self-consistent method is used to solve for the electric field and charge densities. The Successive Overrelaxation (SOR) method in a non-uniform grid spacing is used to solve the Poisson's equation in the cylindrically-symmetric coordinate. The Flux Corrected Transport (FCT) method is modified to solve the continuity equations in the non-uniform grid spacing. Parametric studies of dielectric barrier discharges are conducted. General characteristics of dielectric barrier discharges in both anode-directed and cathode-directed streamer are studied. Effects of the dielectric capacitance, the applied field, the resistance in external circuit and the type of gases (O2, air, N2) are investigated. We conclude that the SOR method in an adaptive grid spacing for the solution of the Poisson's equation in the cylindrically-symmetric coordinate is convergent and effective. The dielectric capacitance has little effect on the g-factor of radical production, but it determines the strength of the dielectric barrier discharge. The applied field and the type of gases used have a significant role on the current peak, current pulse duration and radical generation efficiency, discharge strength, and microstreamer radius, whereas the external series resistance has very little effect on the streamer properties. The results are helpful in further understanding the ozone generation and pollution control process in a dielectric barrier discharge.

Molten salt synthesis of nanocrystalline phase of high dielectric constant material CaCu3Ti4O12.

PubMed

Prakash, B Shri; Varma, K B R

2008-11-01

Nanocrystalline powders of giant dielectric constant material, CaCu3Ti4O12 (CCTO), have been prepared successfully by the molten salt synthesis (MSS) using KCl at 750 degrees C/10 h, which is significantly lower than the calcination temperature (approximately 1000 degrees C) that is employed to obtain phase pure CCTO in the conventional solid-state reaction route. The water washed molten salt synthesized powder, characterized by X-ray powder diffraction (XRD), Scanning electron microscopy (SEM), and Transmission electron microscopy (TEM) confirmed to be a phase pure CCTO associated with approximately 150 nm sized crystallites of nearly spherical shape. The decrease in the formation temperature/duration of CCTO in MSS method was attributed to an increase in the diffusion rate or a decrease in the diffusion length of reacting ions in the molten salt medium. As a consequence of liquid phase sintering, pellets of as-synthesized KCl containing CCTO powder exhibited higher sinterability and grain size than that of KCl free CCTO samples prepared by both MSS method and conventional solid-state reaction route. The grain size and the dielectric constant of KCl containing CCTO ceramics increased with increasing sintering temperature (900 degrees C-1050 degrees C). Indeed the dielectric constants of these ceramics were higher than that of KCl free CCTO samples prepared by both MSS method and those obtained via the solid-state reaction route and sintered at the same temperature. Internal barrier layer capacitance (IBLC) model was invoked to correlate the observed dielectric constant with the grain size in these samples.

Analysis of the topochemical effects of dielectric-barrier discharge on cellulosic fibers

Treesearch

Lorraine C. Vander Wielen; Thomas Elder; Arthur J. Ragauskas

2005-01-01

This study investigates the fundamental topochemical effects of dielectric-barrier discharge treatment on bleached chemical pulp and unbleached mechanical pulp fiber surfaces. Fibers were treated with various levels of dielectric-barrier discharge treatment ranging from 0 to 9.27 kw/m2/min. Changes to the fiber surface topochemistry were investigated by atomic force...

Effect of the scheme of plasmachemical processes on the calculated characteristics of a barrier discharge in xenon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Avtaeva, S. V.; Kulumbaev, E. B.

2008-06-15

The dynamics of a repetitive barrier discharge in xenon at a pressure of 400 Torr is simulated using a one-dimensional drift-diffusion model. The thicknesses of identical barriers with a dielectric constant of 4 are 2 mm, and the gap length is 4 mm. The discharge is fed with an 8-kV ac voltage at a frequency of 25 or 50 kHz. The development of the ionization wave and the breakdown and afterglow phases of a barrier discharge are analyzed using two different kinetic schemes of elementary processes in a xenon plasma. It is shown that the calculated waveforms of the dischargemore » voltage and current, the instant of breakdown, and the number of breakdowns per voltage half-period depend substantially on the properties of the kinetic scheme of plasmachemical processes.« less

Application of the compensated Arrhenius formalism to self-diffusion: implications for ionic conductivity and dielectric relaxation.

PubMed

Petrowsky, Matt; Frech, Roger

2010-07-08

Self-diffusion coefficients are measured from -5 to 80 degrees C in a series of linear alcohols using pulsed field gradient NMR. The temperature dependence of these data is studied using a compensated Arrhenius formalism that assumes an Arrhenius-like expression for the diffusion coefficient; however, this expression includes a dielectric constant dependence in the exponential prefactor. Scaling temperature-dependent diffusion coefficients to isothermal diffusion coefficients so that the exponential prefactors cancel results in calculated energies of activation E(a). The exponential prefactor is determined by dividing the temperature-dependent diffusion coefficients by the Boltzmann term exp(-E(a)/RT). Plotting the prefactors versus the dielectric constant places the data on a single master curve. This procedure is identical to that previously used to study the temperature dependence of ionic conductivities and dielectric relaxation rate constants. The energies of activation determined from self-diffusion coefficients in the series of alcohols are strikingly similar to those calculated for the same series of alcohols from both dielectric relaxation rate constants and ionic conductivities of dilute electrolytes. The experimental results are described in terms of an activated transport mechanism that is mediated by relaxation of the solution molecules. This microscopic picture of transport is postulated to be common to diffusion, dielectric relaxation, and ionic transport.

The influence of negative ions in helium-oxygen barrier discharges: III. Simulation of laser photodetachment and comparison with experiment

NASA Astrophysics Data System (ADS)

Nemschokmichal, Sebastian; Tschiersch, Robert; Meichsner, Jürgen

2017-11-01

The laser photodetachment experiment in a diffuse helium-oxygen barrier discharge is evaluated by a 1D fluid simulation. As in the experiment, the simulated discharge operates in helium with 400 {ppm} oxygen admixture at 500 {mbar} inside a discharge gap of 3 {mm}. The laser photodetachment is included by the interaction of negative ions with a temporally and spatially dependent photon flux. The simulation with the usually applied set of reactions and rate coefficients provides a much lower negative ion density than needed to explain the impact on the discharge characteristics in the experiment. Further processes for an enhanced negative ion formation and their capabilities of reproducing the experimental results are discussed. These further processes are additional attachment processes in the volume and the negative ion formation at the negatively charged dielectric. Both approaches are able to reproduce the measured laser photodetachment effect partially, but the best agreement with the experimental results is achieved with the formation of negative ions at the negatively charged dielectric.

Comparison of high-voltage ac and pulsed operation of a surface dielectric barrier discharge

NASA Astrophysics Data System (ADS)

Williamson, James M.; Trump, Darryl D.; Bletzinger, Peter; Ganguly, Biswa N.

2006-10-01

A surface dielectric barrier discharge (DBD) in atmospheric pressure air was excited either by low frequency (0.3-2 kHz) high-voltage ac or by short, high-voltage pulses at repetition rates from 50 to 600 pulses s-1. The short-pulse excited discharge was more diffuse and did not have the pronounced bright multiple cathode spots observed in the ac excited discharge. The discharge voltage, current and average power deposited into the discharge were calculated for both types of excitation. As a measure of plasma-chemical efficiency, the ozone number density was measured by UV absorption as a function of average deposited power. The density of ozone produced by ac excitation did not increase so rapidly as that produced by short-pulse excitation as a function of average power, with a maximum measured density of ~3 × 1015 cm-3 at 25 W. The maximum ozone production achieved by short-pulse excitation was ~8.5 × 1015 cm-3 at 20 W, which was four times greater than that achieved by ac excitation at the same power level.

Investigation of airflow effects on the dielectric barrier discharge with single/double discharge channel arrangement

NASA Astrophysics Data System (ADS)

Fan, Zhihui; Yan, Huijie; Liu, Yidi; Guo, Hongfei; Wang, Yuying; Ren, Chunsheng

2018-05-01

Atmospheric-pressure dielectric barrier discharge (DBD) with airflow participation has been widely used in recent years. In this paper, effects of airflow on DBD characteristics are experimentally investigated by single/double pin-to-plate DBD arrangements with an AC exciting source. The discharge electrical characteristics and the movements of discharge channels in airflow are investigated with a single pin electrode arrangement. The current intensities increase in positive cycles and decrease in negative cycles with the increase in airflow velocity. The transition from a filamentary discharge to a diffuse discharge is observed under certain airflow conditions, and the discharge channels move with the airflow with a movement velocity less than the corresponding airflow velocity. In the cases of double pin electrode arrangements, the repulsion between double pin discharge channels is apparent at a 10 mm distance but is not obvious at a 20 mm distance. When the airflow is introduced into the discharge gap, not as in the case of single pin electrode arrangement, the movements of discharge channels in airflow are affected by adjacent discharge channels. The corresponding reasons are analyzed in the paper.

Development of a Lumped Element Circuit Model for Approximation of Dielectric Barrier Discharges

DTIC Science & Technology

2011-08-01

dielectric barrier discharge (DBD) plasmas. Based on experimental observations, it is assumed that nanosecond pulsed DBDs, which have been proposed...species for pulsed direct current (DC) dielectric barrier discharge (DBD) plasmas. Based on experimental observations, it is assumed that nanosecond...momentum-based approaches. Given the fundamental differences between the novel pulsed discharge approach and the more conventional momentum-based

Dielectric and nonlinear current-voltage characteristics of rare-earth doped CaCu3Ti4O12 ceramics

NASA Astrophysics Data System (ADS)

Liu, Laijun; Fang, Liang; Huang, Yanmin; Li, Yunhua; Shi, Danping; Zheng, Shaoying; Wu, Shuangshuang; Hu, Changzheng

2011-11-01

CaCu3Ti4O12 (CCTO) ceramics doped with rare earth (RE) oxides, including Y2O3, La2O3, Eu2O3, and Gd2O3, were prepared by the traditional solid-state reaction method in order to investigate the effect of RE oxide dopants on the electrical properties as a varistor. The phase identification and morphology of the ceramics were investigated by x-ray diffraction (XRD) and scanning electron microscope (SEM), respectively. A high voltage measuring unit and precision impedance analyzer were used to determine the nonohmic (J-E) behaviors and measure the dielectric properties and impedance spectroscopy of the ceramics, respectively. The results showed that RE oxides enhanced greatly the breakdown electric flied but reduced the nonlinear coefficient and the mean grain size of CCTO ceramics. There was a good linear relationship between ln J and E1/2, which demonstrated that the Schottky barrier should exist at the grain boundary. A double Schottky barrier model composed of a depletion layer and a negative charge sheet was proposed, analogous to the barrier model for ZnO varistors. The depletion layer width determined by diffusion distance of RE ions and the effective surface states played important roles on the electrical properties of the ceramics.

Effect of nonlocal electron kinetics on the characteristics of a dielectric barrier discharge in xenon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Avtaeva, S. V.; Skornyakov, A. V.

2009-07-15

The established dynamics of a dielectric barrier discharge in xenon at a pressure of 400 Torr is simulated in the framework of a one-dimensional fluid model in the local and nonlocal field approximations. It is shown that taking into account the nonlocal character of the electric field does not qualitatively change physical processes in a dielectric barrier discharge, but significantly affects its quantitative characteristics. In particular, the sheath thickness decreases, plasma ionization intensifies, the spatiotemporal distribution of the mean electron energy changes, and the discharge radiation efficiency increases. Electron kinetics in a dielectric barrier discharge in xenon is analyzed usingmore » the nonlocal field approximation.« less

Experimental investigation on large-area dielectric barrier discharge in atmospheric nitrogen and air assisted by the ultraviolet lamp.

PubMed

Zhang, Yan; Gu, Biao; Wang, Wenchun; Wang, Dezhen; Peng, Xuwen

2009-04-01

In this paper, ultraviolet radiation produced by the ultraviolet lamp is employed to supply pre-ionization for the dielectric barrier discharge in N(2) or air at atmospheric pressure. The effect of the ultraviolet pre-ionization on improving the uniformity of the dielectric barrier discharge is investigated experimentally. The atmospheric pressure glow discharge of the large area (270 mm x 120 mm) is obtained successfully via the ultraviolet pre-ionization in atmospheric DBD in N(2) when the gas gap decrease to 3mm. Based on the emission spectra, the mechanism which ultraviolet pre-ionization improves the uniformity of the dielectric barrier discharge is discussed.

Anomaly diffuse and dielectric relaxation in strontium doped lanthanum molybdate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Xiao; Fan, Huiqing, E-mail: hqfan3@163.com; Shi, Jing

2011-12-15

Highlights: Black-Right-Pointing-Pointer The anomaly diffuse and dielectric relaxation behaviors are fitted by the Cole-Cole approach. Black-Right-Pointing-Pointer The peak in the LSMO is corresponding to different oxygen ion diffusion process. Black-Right-Pointing-Pointer We first give better explanation about the strange conductivity change caused by doping. Black-Right-Pointing-Pointer The oxygen ion diffusion is due to a combination of the dipolar relaxation and the motion of ions. -- Abstract: The dielectric properties of the La{sub 2-x}Sr{sub x}Mo{sub 2}O{sub 9-{delta}} (x = 0-0.2) ceramics were investigated in the temperature range of 300-800 K. Dielectric measurement reveals that two dielectric anomalies, associated with the oxygen ion diffusion,more » exist in frequency spectrum with x = 0.5. The broad dielectric peaks in tan {delta}({omega}) can be well fitted by a modified Cole-Cole approach. When x = 0.1, only one dielectric relaxation peak is observed, corresponding to different oxygen ion diffusion processes, as distinct from the only relaxation peak in the pure La{sub 2}Mo{sub 2}O{sub 9}. The relaxation parameters {tau}{sub 0}, the dielectric relaxation strength {Delta}, and the activation energy E{sub a} were obtained. The result of this work shows that, the conductivity change caused by doping between the two phases is due to the combination of the dipolar effects and motion of ions.« less

Reactive fluxes delivered by dielectric barrier discharge filaments to slightly wounded skin

NASA Astrophysics Data System (ADS)

Babaeva, Natalia Yu; Kushner, Mark J.

2013-01-01

The application of atmospheric-pressure plasmas to human tissue has been shown to have therapeutic effects for wound healing and in treatment of skin diseases. In this paper, we report on a computational study of the intersection of plasma filaments in a dielectric barrier discharge (DBD) with a small wound in human skin in the context of plasma medicine. The wound is represented as a small cut in the epidermal layer of cells. Intracellular structures and their electrical properties were incorporated into the two-dimensional computational mesh in order to self-consistently couple gas phase plasma transport with the charging of the surface of the wound. We quantify the fluxes of reactive oxygen and nitrogen species, ions and photons produced in or diffusing into the wound as might occur during the first few discharge pulses of treatment. Comparison is made to fluxes predicted by global modelling. We show that the relative location of the plasma filament with respect to the wound is important on plasma time scales (ns) for ions and photons, and for radicals directly produced by electron impact processes. On the longer-term diffusion time scales (ms) the position of the plasma filament relative to the wound is not so critical. For typical DBD conditions, the magnitude of these fluxes to the cellular surfaces corresponds to fluences of radicals nearly equal to the surface site density. These results imply that the biological reactivity is limited by reaction probabilities and not the availability of radical fluxes.

Aminosilanization nanoadhesive layer for nanoelectric circuits with porous ultralow dielectric film.

PubMed

Zhao, Zhongkai; He, Yongyong; Yang, Haifang; Qu, Xinping; Lu, Xinchun; Luo, Jianbin

2013-07-10

An ultrathin layer is investigated for its potential application of replacing conventional diffusion barriers and promoting interface adhesion for nanoelectric circuits with porous ultralow dielectrics. The porous ultralow dielectric (k ≈ 2.5) substrate is silanized by 3-aminopropyltrimethoxysilane (APTMS) to form the nanoadhesive layer by performing oxygen plasma modification and tailoring the silanization conditions appropriately. The high primary amine content is obtained in favor of strong interaction between amino groups and copper. And the results of leakage current measurements of metal-oxide-semiconductor capacitor structure demonstrate that the aminosilanization nanoadhesive layer can block copper diffusion effectively and guarantee the performance of devices. Furthermore, the results of four-point bending tests indicate that the nanoadhesive layer with monolayer structure can provide the satisfactory interface toughness up to 6.7 ± 0.5 J/m(2) for Cu/ultralow-k interface. Additionally, an annealing-enhanced interface toughness effect occurs because of the formation of Cu-N bonding and siloxane bridges below 500 °C. However, the interface is weakened on account of the oxidization of amines and copper as well as the breaking of Cu-N bonding above 500 °C. It is also found that APTMS nanoadhesive layer with multilayer structure provides relatively low interface toughness compared with monolayer structure, which is mainly correlated to the breaking of interlayer hydrogen bonding.

Control of Silver Diffusion in Low-Temperature Co-Fired Diopside Glass-Ceramic Microwave Dielectrics

PubMed Central

Chou, Chen-Chia; Chang, Chun-Yao; Chen, Guang-Yu; Feng, Kuei-Chih; Tsao, Chung-Ya

2017-01-01

Electrode material for low-temperature co-fired diopside glass-ceramic used for microwave dielectrics was investigated in the present work. Diffusion of silver from the electrode to diopside glass-ceramics degrades the performance of the microwave dielectrics. Two approaches were adopted to resolve the problem of silver diffusion. Firstly, silicon-oxide (SiO2) powder was employed and secondly crystalline phases were chosen to modify the sintering behavior and inhibit silver ions diffusion. Nanoscale amorphous SiO2 powder turns to the quartz phase uniformly in dielectric material during the sintering process, and prevents the silver from diffusion. The chosen crystalline phase mixing into the glass-ceramics enhances crystallinity of the material and inhibits silver diffusion as well. The result provides a method to decrease the diffusivity of silver ions by adding the appropriate amount of SiO2 and appropriate crystalline ceramics in diopside glass-ceramic dielectric materials. Finally, we used IEEE 802.11a 5.8 GHz as target specification to manufacture LTCC antenna and the results show that a good broadband antenna was made using CaMgSi2O6 with 4 wt % silicon oxide. PMID:29286330

Investigation of amorphous RuMoC alloy films as a seedless diffusion barrier for Cu/ p-SiOC:H ultralow- k dielectric integration

NASA Astrophysics Data System (ADS)

Jiao, Guohua; Liu, Bo; Li, Qiran

2015-08-01

Ultrathin RuMoC amorphous films prepared by magnetron co-sputtering with Ru and MoC targets in a sandwiched scheme Si/ p-SiOC:H/RuMoC/Cu were investigated as barrier in copper metallization. The evolution of final microstructure of RuMoC alloy films show sensitive correlation with the content of doped Mo and C elements and can be easily controlled by adjusting the sputtering power of the MoC target. There was no signal of interdiffusion between the Cu and SiOC:H layer in the sample of Cu/RuMoC/ p-SiOC:H/Si, even annealing up to 500 °C. Very weak signal of oxygen have been confirmed in the RuMoC barrier layer both as-deposited and after being annealed, and a good performance on preventing oxygen diffusion has been proved. Leakage current and resistivity evaluations also reveal the excellent thermal reliability of this Si/ p-SiOC:H/RuMoC/Cu film stack at the temperatures up to 500 °C, indicating its potential application in the advanced barrierless Cu metallization.

Dielectric relaxation dynamics and AC conductivity scaling of metal-organic framework (MOF-5) based polymer electrolyte nanocomposites incorporated with ionic liquid

NASA Astrophysics Data System (ADS)

Dutta, Rituraj; Kumar, A.

2017-10-01

Dielectric relaxation dynamics and AC conductivity scaling of a metal-organic framework (MOF-5) based poly (vinylidene fluoride-co-hexafluoropropylene) (PVdf-HFP) incorporated with 1-Butyl-3-methylimidazolium hexafluorophosphate have been studied over a frequency range of 40 Hz-5 MHz and in the temperature range of 300 K-380 K. High values of dielectric permittivity (~{{\\varepsilon }\\prime} ) having strong dispersion are obtained at low frequency because of interfacial polarization. The real part of the dielectric modulus spectra (M‧) shows no prominent peak, whereas the imaginary part (M″) shows certain peaks, with a reduction in relaxation time (τ) that can be attributed to a non-Debye relaxation mechanism. The spectra also depict both concentration- and temperature-independent scaling behavior. The power law dependent variation of AC conductivity follows the jump relaxation model and reveals activated ion hopping over diffusion barriers. The value of the frequency exponent is observed to decrease with increasing concentration of ionic liquid, indicating the forward hopping of ions in the relaxation process. The AC conductivity scaling curves at different temperatures also depict the temperature-independent relaxation dynamics.

Structure, electronic properties, and oxygen incorporation/diffusion characteristics of the Σ 5 TiN(310)[001] tilt grain boundary

NASA Astrophysics Data System (ADS)

McKenna, Keith P.

2018-02-01

First principles calculations are employed to investigate the structure, electronic properties, and oxygen incorporation/diffusion characteristics of the Σ 5 TiN(310) tilt grain boundary with relevance to applications of polycrystalline TiN in microelectronics and protective coatings. We show that the grain boundary does not significantly modify electronic states near the Fermi energy but does induce an upward shift of up to 0.6 eV in a number of deeper occupied bands. We also show that oxygen is preferentially incorporated into the TiN grain boundary (GB) but must overcome relatively high activation energies for further diffusion. These predictions are consistent with the "stuffed barrier model" proposed to explain the good barrier characteristics of TiN. We also show that while the oxidizing power of TiN GBs is not sufficient to reduce HfO2 (a prototypical gate dielectric material), they can act as a scavenger for interstitial oxygen. Altogether, these results provide the much needed atomistic insights into the properties of a model GB in TiN and suggest a number of directions for future investigation.

Hybrid plasmachemical reactor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lelevkin, V. M., E-mail: lelevkin44@mail.ru; Smirnova, Yu. G.; Tokarev, A. V.

2015-04-15

A hybrid plasmachemical reactor on the basis of a dielectric barrier discharge in a transformer is developed. The characteristics of the reactor as functions of the dielectric barrier discharge parameters are determined.

On the use of (3-trimethoxysilylpropyl)diethylenetriamine self-assembled monolayers as seed layers for the growth of Mn based copper diffusion barrier layers

NASA Astrophysics Data System (ADS)

Brady-Boyd, A.; O'Connor, R.; Armini, S.; Selvaraju, V.; Hughes, G.; Bogan, J.

2018-01-01

In this work x-ray photoelectron spectroscopy is used to investigate in-vacuo, the interaction of metallic manganese with a (3-trimethoxysilylpropyl)diethylenetriamine (DETA) self-assembled monolayer (SAM) on SiO2 and non-porous low-k dielectric materials. Subsequent deposition of a ∼0.5 nm thick Mn, followed by a 200 °C anneal results in the Mn diffusing through the SAM to interact with the underlying SiO2 layer to form a Mn-silicate layer. Furthermore, there is evidence that the Mn interacts with the carbon and nitrogen within the SAM to form Mn-carbide and Mn-nitride, respectively. When deposited on low-k materials the Mn is found to diffuse through to the SAM on deposition and interact both with the SAM and the underlying substrate in a similar fashion.

Dielectric Surface Effects on Transient Arcs in Lightning Arrester Devices

DTIC Science & Technology

2011-06-01

pp. 816– 823, 1971. [13] V. I. Gibalov and G. J. Pietsch , “The development of dielectric barrier discharges in gas gaps and on surfaces,” J. Phys. D...Appl. Phys., vol. 33, p. 2618, 2000. [14] D. Braun, V. Gibalov, and G. Pietsch , “Two-dimensional modelling of the dielectric barrier discharge in air

Active species delivered by dielectric barrier discharge filaments to bacteria biofilms on the surface of apple

NASA Astrophysics Data System (ADS)

Cheng, He; Liu, Xin; Lu, Xinpei; Liu, Dawei

2016-07-01

The atmospheric pressure non-equilibrium plasma has shown a significant potential as a novel food decontamination technology. In this paper, we report a computational study of the intersection of negative streamer produced by air dielectric barrier discharge with bacteria biofilm on an apple surface. The structure, conductivities, and permittivities of bacteria biofilm have been considered in the Poisson's equations and transportation equations of charge and neutral species to realize self-consistent transportation of plasma between electrode and charging surfaces of apple. We find that the ionization near the biofilm facilitates the propagation of negative streamer when the streamer head is 1 mm from the biofilm. The structure of the biofilm results in the non-uniform distribution of ROS and RNS captured by flux and time fluence of these reactive species. The mean free path of charged species in μm scale permitted the plasma penetrate into the cavity of the biofilm, therefore, although the density of ROS and RNS decrease by 6-7 order of magnitude, the diffusion results in the uniform distribution of ROS and RNS inside the cavity during the pulse off period.

Dual-pump CARS measurements in a hydrogen diffusion flame in cross-flow with AC dielectric barrier discharge

NASA Astrophysics Data System (ADS)

Nishihara, Munetake; Freund, Jonathan B.; Glumac, Nick G.; Elliott, Gregory S.

2018-03-01

This paper presents dual-pump coherent anti-Stokes Raman scattering (CARS) measurements for simultaneous detection of flow temperature and relative concentration, applied to the characterization of a discharge-coupled reacting jet in a cross flow. The diagnostic is hydrogen Q-branch based, providing a much wider dynamic range compared to detection in the S-branch. For a previously developed dielectric barrier discharge, aligned co-axially with the fuel jet, OH planar laser induced fluorescence measurements show that the disturbance in the flame boundary leads to mixing enhancement. The H2-N2 dual-pump CARS measurement was used to map two-dimensional temperature distributions. The increase of the maximum temperature was up to 300 K, with 50% more H2 consumption, providing the reason for the decrease in the flame length by 25%. The increase of the relative H2O-H2 fraction was accompanied with a temperature increase, which indicates local equivalence ratios of below 1. The H2-O2 dual-pump measurements confirmed that the fuel-oxidizer ratios remain in the fuel-lean side at most of the probed locations.

Effect of nitrogen addition to ozone generation characteristics by diffuse and filamentary dielectric barrier discharges at atmospheric pressure

NASA Astrophysics Data System (ADS)

Osawa, Naoki; Tsuji, Takafumi; Ogiso, Ryota; Yoshioka, Yoshio

2017-05-01

Ozone is widely used for gas treatment, advanced oxidation processes, microorganisms inactivation, etc. In this research, we investigated the effect of nitrogen addition to ozone generation characteristics by atmospheric pressure Townsend discharge (APTD) type and filamentary dielectric barrier discharge (DBD) type ozone generators. The result showed that the ozone generated by the filamentary DBD increases rapidly with the increase of O2 content, and is higher than that by the APTD. On the other hand, it is interesting that the ozone generated by the APTD gradually decreases with the increase of O2 content. In order to clarify why the characteristics of ozone generation by the two kinds of discharge modes showed different dependency to the N2 content, we analyzed the exhaust gas composition using FTIR spectroscopy and calculated the rate coefficients using BOLSIG+ code. As a result, we found that although O2 content decreased with increasing N2 content, additional O atoms produced by excited N2 molecules contribute to ozone generation in case of APTD. Contribution to the topical issue "The 15th International Symposium on High Pressure Low Temperature Plasma Chemistry (HAKONE XV)", edited by Nicolas Gherardi and Tomáš Hoder

Dissipated power and induced velocity fields data of a micro single dielectric barrier discharge plasma actuator for active flow control☆

PubMed Central

Pescini, E.; Martínez, D.S.; De Giorgi, M.G.; Francioso, L.; Ficarella, A.

2015-01-01

In recent years, single dielectric barrier discharge (SDBD) plasma actuators have gained great interest among all the active flow control devices typically employed in aerospace and turbomachinery applications [1,2]. Compared with the macro SDBDs, the micro single dielectric barrier discharge (MSDBD) actuators showed a higher efficiency in conversion of input electrical power to delivered mechanical power [3,4]. This article provides data regarding the performances of a MSDBD plasma actuator [5,6]. The power dissipation values [5] and the experimental and numerical induced velocity fields [6] are provided. The present data support and enrich the research article entitled “Optimization of micro single dielectric barrier discharge plasma actuator models based on experimental velocity and body force fields” by Pescini et al. [6]. PMID:26425667

Role of the dielectric for the charging dynamics of the dielectric/barrier interface in AlGaN/GaN based metal-insulator-semiconductor structures under forward gate bias stress

NASA Astrophysics Data System (ADS)

Lagger, P.; Steinschifter, P.; Reiner, M.; Stadtmüller, M.; Denifl, G.; Naumann, A.; Müller, J.; Wilde, L.; Sundqvist, J.; Pogany, D.; Ostermaier, C.

2014-07-01

The high density of defect states at the dielectric/III-N interface in GaN based metal-insulator-semiconductor structures causes tremendous threshold voltage drifts, ΔVth, under forward gate bias conditions. A comprehensive study on different dielectric materials, as well as varying dielectric thickness tD and barrier thickness tB, is performed using capacitance-voltage analysis. It is revealed that the density of trapped electrons, ΔNit, scales with the dielectric capacitance under spill-over conditions, i.e., the accumulation of a second electron channel at the dielectric/AlGaN barrier interface. Hence, the density of trapped electrons is defined by the charging of the dielectric capacitance. The scaling behavior of ΔNit is explained universally by the density of accumulated electrons at the dielectric/III-N interface under spill-over conditions. We conclude that the overall density of interface defects is higher than what can be electrically measured, due to limits set by dielectric breakdown. These findings have a significant impact on the correct interpretation of threshold voltage drift data and are of relevance for the development of normally off and normally on III-N/GaN high electron mobility transistors with gate insulation.

Electrical conduction mechanism and phase transition studies using dielectric properties and Raman spectroscopy in ferroelectric Pb0.76Ca0.24TiO3 thin films

NASA Astrophysics Data System (ADS)

Pontes, F. M.; Pontes, D. S. L.; Leite, E. R.; Longo, E.; Chiquito, A. J.; Pizani, P. S.; Varela, J. A.

2003-12-01

We have studied the phase transition behavior of Pb0.76Ca0.24TiO3 thin films using Raman scattering and dielectric measurement techniques. We also have studied the leakage current conduction mechanism as a function of temperature for these thin films on platinized silicon substrates. A Pb0.76Ca0.24TiO3 thin film was prepared using a soft chemical process, called the polymeric precursor method. The results showed that the dependence of the dielectric constant upon the frequency does not reveal any relaxor behavior. However, a diffuse character-type phase transition was observed upon transformation from a cubic paraelectric phase to a tetragonal ferroelectric phase. The temperature dependency of Raman scattering spectra was investigated through the ferroelectric phase transition. The soft mode showed a marked dependence on temperature and its disappearance at about 598 K. On the other hand, Raman modes persist above the tetragonal to cubic phase transition temperature, although all optical modes should be Raman inactive above the phase transition temperature. The origin of these modes must be interpreted in terms of a local breakdown of cubic symmetry by some kind of disorder. The lack of a well-defined transition temperature suggested a diffuse-type phase transition. This result corroborate the dielectric constant versus temperature data, which showed a broad ferroelectric phase transition in the thin film. The leakage current density of the PCT24 thin film was studied at elevated temperatures, and the data were well fitted by the Schottky emission model. The Schottky barrier height of the PCT24 thin film was estimated to be 1.49 eV.

Far-infrared response of spherical quantum dots: Dielectric effects and the generalized Kohn's theorem

NASA Astrophysics Data System (ADS)

Movilla, J. L.; Planelles, J.

2007-05-01

The influence of the dielectric environment on the far-infrared (FIR) absorption spectra of two-electron spherical quantum dots is theoretically studied. Effective mass and envelope function approaches with realistic steplike confining potentials are used. Special attention is paid to absorptions that are induced by the electron-electron interaction. High confining barriers make the FIR absorption coefficients almost independent of the quantum dot dielectric environment. Low barrier heights and strong dielectric mismatches preserve the strong fundamental (Kohn) mode but yield the cancellation of excited absorptions, thus monitoring dielectrically induced phase transitions from volume to surface states.

Characteristics of radio-frequency atmospheric pressure dielectric-barrier discharge with dielectric electrodes

NASA Astrophysics Data System (ADS)

Hussain, S.; Qazi, H. I. A.; Badar, M. A.

2014-03-01

An experimental investigation to characterize the properties and highlight the benefits of atmospheric pressure radio-frequency dielectric-barrier discharge (rf DBD) with dielectric electrodes fabricated by anodizing aluminium substrate is presented. The current-voltage characteristics and millisecond images are used to distinguish the α and γ modes. This atmospheric rf DBD is observed to retain the discharge volume without constriction in γ mode. Optical emission spectroscopy demonstrates that the large discharge current leads to more abundant reactive species in this plasma source.

Interference phenomena in the refraction of a surface polariton by vertical dielectric barriers

NASA Technical Reports Server (NTRS)

Shen, T. P.; Wallis, R. F.; Maradudin, A. A.; Stegeman, G. I.

1984-01-01

A normal mode analysis is used to calculate the transmission and reflection coefficients for a surface polariton propagating along the interface between a surface active medium and a dielectric and incident normally on a vertical dielectric barrier of finite thickness or a thin dielectric film of finite length. The efficiencies of conversion of the surface polariton into transmitted and reflected bulk waves are also determined. The radiation patterns associated with the latter waves are presented.

The origin of excellent gate-bias stress stability in organic field-effect transistors employing fluorinated-polymer gate dielectrics.

PubMed

Kim, Jiye; Jang, Jaeyoung; Kim, Kyunghun; Kim, Haekyoung; Kim, Se Hyun; Park, Chan Eon

2014-11-12

Tuning of the energetic barriers to charge transfer at the semiconductor/dielectric interface in organic field-effect transistors (OFETs) is achieved by varying the dielectric functionality. Based on this, the correlation between the magnitude of the energy barrier and the gate-bias stress stability of the OFETs is demonstrated, and the origin of the excellent device stability of OFETs employing fluorinated dielectrics is revealed. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Investigation of the development of dielectric-barrier discharge instabilities in excimer lamp

NASA Astrophysics Data System (ADS)

Bouchachia, A.; Belasri, A.; Harrache, Z.; Amir Aid, D.

2017-11-01

This work represents a study of the formation and propagation of the streamer during a pulse in a plasma cell with dielectric barriers containing a Ne/Xe gas mixture. It is based on a longitudinal mono-dimensional model of the dielectric barrier discharge. In this model, we show the possibility of streamers development in the cathode sheath and its propagation during the plasma formation stage. The model gives the spatiotemporal variations of the propagation speed, the electric field, and the charged particle density of the streamer's head.

Copper diffusion and mechanical toughness at Cu-silica interfaces glued with polyelectrolyte nanolayers

NASA Astrophysics Data System (ADS)

Gandhi, D. D.; Singh, A. P.; Lane, M.; Eizenberg, M.; Ramanath, G.

2007-04-01

We demonstrate the use of polyallylamine hydrochloride (PAH)-polystyrene sulfonate (PSS) nanolayers to block Cu transport into silica. Cu/PSS-PAH/SiO2 structures show fourfold enhancement in device failure times during bias thermal annealing at 200 °C at an applied electric field of 2 MV/cm, when compared with structures with pristine Cu-SiO2 interfaces. Although the bonding at both Cu-PSS and PAH-SiO2 interfaces are strong, the interfacial toughness measured by the four-point bend tests is ˜2 Jm-2. Spectroscopic analysis of fracture surfaces reveals that weak electrostatic bonding at the PSS-PAH interface is responsible for the low toughness. Similar behavior is observed for Cu-SiO2 interfaces modified with other polyelectrolyte bilayers that inhibit Cu diffusion. Thus, while strong bonding at Cu-barrier and barrier-dielectric interfaces may be sufficient for blocking copper transport across polyelectrolyte bilayers, strong interlayer molecular bonding is a necessary condition for interface toughening. These findings are of importance for harnessing MNLs for use in future device wiring applications.

Degradation of organic pollutants and microorganisms from wastewater using different dielectric barrier discharge configurations--a critical review.

PubMed

Mouele, Emile S Massima; Tijani, Jimoh O; Fatoba, Ojo O; Petrik, Leslie F

2015-12-01

The growing global drinking water crisis requires the development of novel advanced, sustainable, and cost-effective water treatment technologies to supplement the existing conventional methods. One such technology is advanced oxidation based on dielectric barrier discharge (DBD). DBD such as single and double planar and single and double cylindrical dielectric barrier configurations have been utilized for efficient degradation of recalcitrant organic pollutants. The overall performance of the different DBD system varies and depends on several factors. Therefore, this review was compiled to give an overview of different DBD configurations vis-a-viz their applications and the in situ mechanism of generation of free reactive species for water and wastewater treatment. Our survey of the literature indicated that application of double cylindrical dielectric barrier configuration represents an ideal and viable route for achieving greater water and wastewater purification efficiency.

The electrical characteristics of the dielectric barrier discharges

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yehia, Ashraf, E-mail: yehia30161@yahoo.com; Department of Physics, Faculty of Science, Assiut University, Assiut 71516

2016-06-15

The electrical characteristics of the dielectric barrier discharges have been studied in this paper under different operating conditions. The dielectric barrier discharges were formed inside two reactors composed of electrodes in the shape of two parallel plates. The dielectric layers inside these reactors were pasted on the surface of one electrode only in the first reactor and on the surfaces of the two electrodes in the second reactor. The reactor under study has been fed by atmospheric air that flowed inside it with a constant rate at the normal temperature and pressure, in parallel with applying a sinusoidal ac voltagemore » between the electrodes of the reactor. The amount of the electric charge that flows from the reactors to the external circuit has been studied experimentally versus the ac peak voltage applied to them. An analytical model has been obtained for calculating the electrical characteristics of the dielectric barrier discharges that were formed inside the reactors during a complete cycle of the ac voltage. The results that were calculated by using this model have agreed well with the experimental results under the different operating conditions.« less

Materials science, integration, and performance characterization of high-dielectric constant thin film based devices

NASA Astrophysics Data System (ADS)

Fan, Wei

To overcome the oxidation and diffusion problems encountered during Copper integration with oxide thin film-based devices, TiAl/Cu/Ta heterostructure has been first developed in this study. Investigation on the oxidation and diffusion resistance of the laminate structure showed high electrical conductance and excellent thermal stability in oxygen environment. Two amorphous oxide layers that were formed on both sides of the TiAl barrier after heating in oxygen have been revealed as the structure that effectively prevents oxygen penetration and protects the integrity of underlying Cu layer. Polycrystalline (BaxSr1-x)TiO3 (BST) thin films were subsequently deposited on the Cu-based bottom electrode by RF magnetron sputtering to investigate the interaction between the oxide and Cu layers. The thickness of the interfacial layer and interface roughness play critical roles in the optimization of the electrical performance of the BST capacitors using Cu-based electrode. It was determined that BST deposition at moderate temperature followed by rapid thermal annealing in pure oxygen yields BST/Cu capacitors with good electrical properties for application to high frequency devices. The knowledge obtained on the study of barrier properties of TiAl inspired a continuous research on the materials science issues related to the application of the hybrid TiAlOx, as high-k gate dielectric in MOSFET devices. Novel fabrication process such as deposition of ultra-thin TiAl alloy layer followed by oxidation with atomic oxygen has been established in this study. Stoichiometric amorphous TiAlOx layers, exhibiting only Ti4+ and Al3+ states, were produced with a large variation of oxidation temperature (700°C to room temperature). The interfacial SiOx formation between TiAlOx and Si was substantially inhibited by the use of the low temperature oxidation process. Electrical characterization revealed a large permittivity of 30 and an improved band structure for the produced TiAlOx layers, compared with pure TiO2. A modified 3-element model was adopted to extract the true C-V behavior of the TiAlOx-based MOS capacitor. Extremely small equivalent oxide thickness (EOT) less than 0.5 nm with dielectric leakage 4˜5 magnitude lower than that for SiO2 has been achieved on TiAlOx layer as a result of its excellent dielectric properties.

Thick adherent dielectric films on plastic substrates and method for depositing same

DOEpatents

Wickboldt, Paul; Ellingboe, Albert R.; Theiss, Steven D.; Smith, Patrick M.

2002-01-01

Thick adherent dielectric films deposited on plastic substrates for use as a thermal barrier layer to protect the plastic substrates from high temperatures which, for example, occur during laser annealing of layers subsequently deposited on the dielectric films. It is desirable that the barrier layer has properties including: a thickness of 1 .mu.m or greater, adheres to a plastic substrate, does not lift-off when cycled in temperature, has few or no cracks and does not crack when subjected to bending, resistant to lift-off when submersed in fluids, electrically insulating and preferably transparent. The thick barrier layer may be composed, for example, of a variety of dielectrics and certain metal oxides, and may be deposited on a variety of plastic substrates by various known deposition techniques. The key to the method of forming the thick barrier layer on the plastic substrate is maintaining the substrate cool during deposition of the barrier layer. Cooling of the substrate maybe accomplished by the use of a cooling chuck on which the plastic substrate is positioned, and by directing cooling gas, such as He, Ar and N.sub.2, between the plastic substrate and the cooling chucks. Thick adherent dielectric films up to about 5 .mu.m have been deposited on plastic substrates which include the above-referenced properties, and which enable the plastic substrates to withstand laser processing temperatures applied to materials deposited on the dielectric films.

Electrical conduction mechanism and dielectric characterization of MnTPPCl thin films

NASA Astrophysics Data System (ADS)

Meikhail, M. S.; Oraby, A. H.; El-Nahass, M. M.; Zeyada, H. M.; Al-Muntaser, A. A.

2018-06-01

The AC conductivity and dielectric properties of MnTPPCl sandwich structure as Au/MnTPPCl/Au were studied. The conductivity of the MnTPPCl thin films have been interpreted by the correlated barrier hopping (CBH) model. The dominant conduction process have found to be the single polaron hopping conduction. The values of the hopping distance, Rω, barrier height, W, and the localized-state density, N, are estimated at different frequencies. The behavior of dielectric constant and dielectric loss was discussed as a function of temperature and frequency. The dielectric constant was described in terms of polarization mechanism in materials. The spectral behavior of dielectric loss is interpreted on the basis of the Giuntini et al. model [1]. The value of WM is obtained as 0.32 eV. A non-Debye relaxation phenomenon was observed from the dielectric relaxation mechanism.

Plasma dynamics in a packed bed dielectric barrier discharge (DBD) operated in helium

NASA Astrophysics Data System (ADS)

Mujahid, Zaka-ul-Islam; Hala, Ahmed

2018-03-01

Packed bed dielectric barrier discharges (DBDs) are very promising for several applications including remediation of environmental pollutants and greenhouse gas conversion. In this work, we have investigated the space and time-resolved emission from a packed bed DBD operated in helium, to understand the plasma dynamics. We have chosen a simple planar DBD arrangement with a patterned dielectric, which mimics the spherical boundaries between the dielectric pellets and allows the optical access to the plasma. The results show that plasma is sustained in a packed bed DBD by three mechanisms: filamentary discharge in the void (between the center of dielectric structures and the opposite electrode), microdischarges at the contact points and surface ionization waves over the dielectric surface. It is observed that for most of the duration plasma is generated at the contact points between the dielectric structures.

Experimental visualization of the cathode layer in AC surface dielectric barrier discharge

NASA Astrophysics Data System (ADS)

Kim, Sang-You; Lho, Taihyeop; Chung, Kyu-Sun

2018-06-01

A narrow etched polyimide line at the bottom edge of a biased electrode (BE) and a non-etched dielectric surface near the biased electrode were observed in an atmospheric AC flexible surface dielectric barrier discharge of polyimide dielectric. These findings are attributed to the bombardment of positive oxygen ions on the bottom edge of the BE and the electron breakdown trajectory not contacting the polyimide surface following the electric field lines formed between the BE edge and the surface charge layer on the dielectric. The length of the non-etched dielectric surface during the first micro-discharge was observed as 22 μm. This occurred, regardless of three different operating durations, which is in good agreement with the length of the cathode layer according to Paschen's law.

Indium diffusion through high-k dielectrics in high-k/InP stacks

NASA Astrophysics Data System (ADS)

Dong, H.; Cabrera, W.; Galatage, R. V.; Santosh KC, Brennan, B.; Qin, X.; McDonnell, S.; Zhernokletov, D.; Hinkle, C. L.; Cho, K.; Chabal, Y. J.; Wallace, R. M.

2013-08-01

Evidence of indium diffusion through high-k dielectric (Al2O3 and HfO2) films grown on InP (100) by atomic layer deposition is observed by angle resolved X-ray photoelectron spectroscopy and low energy ion scattering spectroscopy. The analysis establishes that In-out diffusion occurs and results in the formation of a POx rich interface.

Approaching conversion limit with all-dielectric solar cell reflectors.

PubMed

Fu, Sze Ming; Lai, Yi-Chun; Tseng, Chi Wei; Yan, Sheng Lun; Zhong, Yan Kai; Shen, Chang-Hong; Shieh, Jia-Min; Li, Yu-Ren; Cheng, Huang-Chung; Chi, Gou-chung; Yu, Peichen; Lin, Albert

2015-02-09

Metallic back reflectors has been used for thin-film and wafer-based solar cells for very long time. Nonetheless, the metallic mirrors might not be the best choices for photovoltaics. In this work, we show that solar cells with all-dielectric reflectors can surpass the best-configured metal-backed devices. Theoretical and experimental results all show that superior large-angle light scattering capability can be achieved by the diffuse medium reflectors, and the solar cell J-V enhancement is higher for solar cells using all-dielectric reflectors. Specifically, the measured diffused scattering efficiency (D.S.E.) of a diffuse medium reflector is >0.8 for the light trapping spectral range (600nm-1000nm), and the measured reflectance of a diffuse medium can be as high as silver if the geometry of embedded titanium oxide(TiO(2)) nanoparticles is optimized. Moreover, the diffuse medium reflectors have the additional advantage of room-temperature processing, low cost, and very high throughput. We believe that using all-dielectric solar cell reflectors is a way to approach the thermodynamic conversion limit by completely excluding metallic dissipation.

Cathode fall measurement in a dielectric barrier discharge in helium

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hao, Yanpeng; Zheng, Bin; Liu, Yaoge

2013-11-15

A method based on the “zero-length voltage” extrapolation is proposed to measure cathode fall in a dielectric barrier discharge. Starting, stable, and discharge-maintaining voltages were measured to obtain the extrapolation zero-length voltage. Under our experimental conditions, the “zero-length voltage” gave a cathode fall of about 185 V. Based on the known thickness of the cathode fall region, the spatial distribution of the electric field strength in dielectric barrier discharge in atmospheric helium is determined. The strong cathode fall with a maximum field value of approximately 9.25 kV/cm was typical for the glow mode of the discharge.

Micronucleus formation induced by dielectric barrier discharge plasma exposure in brain cancer cells

NASA Astrophysics Data System (ADS)

Kaushik, Nagendra K.; Uhm, Hansup; Ha Choi, Eun

2012-02-01

Induction of micronucleus formation (cytogenetic damage) in brain cancer cells upon exposure of dielectric barrier discharge plasma has been investigated. We have investigated the influence of exposure and incubation times on T98G brain cancer cells by using growth kinetic, clonogenic, and micronucleus formation assay. We found that micronucleus formation rate directly depends on the plasma exposure time. It is also shown that colony formation capacity of cells has been inhibited by the treatment of plasma at all doses. Cell death and micronucleus formation are shown to be significantly elevated by 120 and 240 s exposure of dielectric barrier discharge plasma.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Song, Yongli; Wang, Xianjie; Sui, Yu

Here in this article, we investigated the dielectric properties of (In + Nb) co-doped rutile TiO 2 single crystal and polycrystalline ceramics. Both of them showed colossal, up to 10 4, dielectric permittivity at room temperature. The single crystal sample showed one dielectric relaxation process with a large dielectric loss. The voltage-dependence of dielectric permittivity and the impedance spectrum suggest that the high dielectric permittivity of single crystal originated from the surface barrier layer capacitor (SBLC). The impedance spectroscopy at different temperature confirmed that the (In+Nb) co-doped rutile TiO 2 polycrystalline ceramic had semiconductor grains and insulating grain boundaries, andmore » that the activation energies were calculated to be 0.052 eV and 0.35 eV for grain and grain boundary, respectively. The dielectric behavior and impedance spectrum of the polycrystalline ceramic sample indicated that the internal barrier layer capacitor (IBLC) mode made a major contribution to the high ceramic dielectric permittivity, instead of the electron-pinned defect-dipoles.« less

Origin of colossal dielectric permittivity of rutile Ti 0.9In 0.05Nb 0.05O 2: single crystal and polycrystalline

DOE PAGES

Song, Yongli; Wang, Xianjie; Sui, Yu; ...

2016-02-12

Here in this article, we investigated the dielectric properties of (In + Nb) co-doped rutile TiO 2 single crystal and polycrystalline ceramics. Both of them showed colossal, up to 10 4, dielectric permittivity at room temperature. The single crystal sample showed one dielectric relaxation process with a large dielectric loss. The voltage-dependence of dielectric permittivity and the impedance spectrum suggest that the high dielectric permittivity of single crystal originated from the surface barrier layer capacitor (SBLC). The impedance spectroscopy at different temperature confirmed that the (In+Nb) co-doped rutile TiO 2 polycrystalline ceramic had semiconductor grains and insulating grain boundaries, andmore » that the activation energies were calculated to be 0.052 eV and 0.35 eV for grain and grain boundary, respectively. The dielectric behavior and impedance spectrum of the polycrystalline ceramic sample indicated that the internal barrier layer capacitor (IBLC) mode made a major contribution to the high ceramic dielectric permittivity, instead of the electron-pinned defect-dipoles.« less

Origin of colossal dielectric permittivity of rutile Ti0.9In0.05Nb0.05O2: single crystal and polycrystalline

PubMed Central

Song, Yongli; Wang, Xianjie; Sui, Yu; Liu, Ziyi; Zhang, Yu; Zhan, Hongsheng; Song, Bingqian; Liu, Zhiguo; Lv, Zhe; Tao, Lei; Tang, Jinke

2016-01-01

In this paper, we investigated the dielectric properties of (In + Nb) co-doped rutile TiO2 single crystal and polycrystalline ceramics. Both of them showed colossal, up to 104, dielectric permittivity at room temperature. The single crystal sample showed one dielectric relaxation process with a large dielectric loss. The voltage-dependence of dielectric permittivity and the impedance spectrum suggest that the high dielectric permittivity of single crystal originated from the surface barrier layer capacitor (SBLC). The impedance spectroscopy at different temperature confirmed that the (In + Nb) co-doped rutile TiO2 polycrystalline ceramic had semiconductor grains and insulating grain boundaries, and that the activation energies were calculated to be 0.052 eV and 0.35 eV for grain and grain boundary, respectively. The dielectric behavior and impedance spectrum of the polycrystalline ceramic sample indicated that the internal barrier layer capacitor (IBLC) mode made a major contribution to the high ceramic dielectric permittivity, instead of the electron-pinned defect-dipoles. PMID:26869187

Origin of colossal dielectric permittivity of rutile Ti0.9In0.05Nb0.05O2: single crystal and polycrystalline

NASA Astrophysics Data System (ADS)

Song, Yongli; Wang, Xianjie; Sui, Yu; Liu, Ziyi; Zhang, Yu; Zhan, Hongsheng; Song, Bingqian; Liu, Zhiguo; Lv, Zhe; Tao, Lei; Tang, Jinke

2016-02-01

In this paper, we investigated the dielectric properties of (In + Nb) co-doped rutile TiO2 single crystal and polycrystalline ceramics. Both of them showed colossal, up to 104, dielectric permittivity at room temperature. The single crystal sample showed one dielectric relaxation process with a large dielectric loss. The voltage-dependence of dielectric permittivity and the impedance spectrum suggest that the high dielectric permittivity of single crystal originated from the surface barrier layer capacitor (SBLC). The impedance spectroscopy at different temperature confirmed that the (In + Nb) co-doped rutile TiO2 polycrystalline ceramic had semiconductor grains and insulating grain boundaries, and that the activation energies were calculated to be 0.052 eV and 0.35 eV for grain and grain boundary, respectively. The dielectric behavior and impedance spectrum of the polycrystalline ceramic sample indicated that the internal barrier layer capacitor (IBLC) mode made a major contribution to the high ceramic dielectric permittivity, instead of the electron-pinned defect-dipoles.

Origin of colossal dielectric permittivity of rutile Ti₀.₉In₀.₀₅Nb₀.₀₅O₂: single crystal and polycrystalline.

PubMed

Song, Yongli; Wang, Xianjie; Sui, Yu; Liu, Ziyi; Zhang, Yu; Zhan, Hongsheng; Song, Bingqian; Liu, Zhiguo; Lv, Zhe; Tao, Lei; Tang, Jinke

2016-02-12

In this paper, we investigated the dielectric properties of (In + Nb) co-doped rutile TiO2 single crystal and polycrystalline ceramics. Both of them showed colossal, up to 10(4), dielectric permittivity at room temperature. The single crystal sample showed one dielectric relaxation process with a large dielectric loss. The voltage-dependence of dielectric permittivity and the impedance spectrum suggest that the high dielectric permittivity of single crystal originated from the surface barrier layer capacitor (SBLC). The impedance spectroscopy at different temperature confirmed that the (In + Nb) co-doped rutile TiO2 polycrystalline ceramic had semiconductor grains and insulating grain boundaries, and that the activation energies were calculated to be 0.052 eV and 0.35 eV for grain and grain boundary, respectively. The dielectric behavior and impedance spectrum of the polycrystalline ceramic sample indicated that the internal barrier layer capacitor (IBLC) mode made a major contribution to the high ceramic dielectric permittivity, instead of the electron-pinned defect-dipoles.

Silicon nitride protective coatings for silvered glass mirrors

DOEpatents

Tracy, C. Edwin; Benson, David K.

1988-01-01

A protective diffusion barrier for metalized mirror structures is provided by a layer or coating of silicon nitride which is a very dense, transparent, dielectric material that is impervious to water, alkali, and other impurities and corrosive substances that typically attack the metal layers of mirrors and cause degradation of the mirrors' reflectivity. The silicon nitride layer can be deposited on the substrate before metal deposition to stabilize the metal/substrate interface, and it can be deposited over the metal to encapsulate it and protect the metal from corrosion or other degradation. Mirrors coated with silicon nitride according to this invention can also be used as front surface mirrors.

Silicon nitride protective coatings for silvered glass mirrors

DOEpatents

Tracy, C.E.; Benson, D.K.

1984-07-20

A protective diffusion barrier for metalized mirror structures is provided by a layer or coating of silicon nitride which is a very dense, transparent, dielectric material that is impervious to water, alkali, and other impurities and corrosive substances that typically attack the metal layers of mirrors and cause degradation of the mirrors' reflectivity. The silicon nitride layer can be deposited on the substrate prior to metal deposition thereon to stabilize the metal/substrate interface, and it can be deposited over the metal to encapsulate it and protect the metal from corrosion or other degradation. Mirrors coated with silicon nitride according to this invention can also be used as front surface mirrors.

Advanced optical modeling of TiN metal hard mask for scatterometric critical dimension metrology

NASA Astrophysics Data System (ADS)

Ebersbach, Peter; Urbanowicz, Adam M.; Likhachev, Dmitriy; Hartig, Carsten

2017-03-01

The majority of scatterometric production control models assume constant optical properties of the materials and only dimensional parameters are allowed to vary. However, this assumption, especially in case of thin-metal films, negatively impacts model precision and accuracy. In this work we focus on optical modeling of the TiN metal hardmask for scatterometry applications. Since the dielectric function of TiN exhibits thickness dependence, we had to take this fact into account. Moreover, presence of the highly absorbing films influences extracted thicknesses of dielectric layers underneath the metal films. The later phenomenon is often not reflected by goodness of fit. We show that accurate optical modeling of metal is essential to achieve desired scatterometric model quality for automatic process control in microelectronic production. Presented modeling methodology can be applied to other TiN applications such as diffusion barriers and metal gates as well as for other metals used in microelectronic manufacturing for all technology nodes.

Thin film integrated capacitors with sputtered-anodized niobium pentoxide dielectric for decoupling applications

NASA Astrophysics Data System (ADS)

Jacob, Susan

Electronics system miniaturization is a major driver for high-k materials. High-k materials in capacitors allow for high capacitance, enabling system miniaturization. Ta2O5 (k˜24) has been the dominant high-k material in the electronic industry for decoupling capacitors, filter capacitors, etc. In order to facilitate further system miniaturization, this project has investigated thin film integrated capacitors with Nb2O5 dielectric. Nb2O 5 has k˜41 and is a potential candidate for replacing Ta2O5. But, the presence of suboxides (NbO2 and NbO) in the dielectric deteriorates the electrical properties (leakage current, thermal instability of capacitance, etc.). Also, the high oxygen solubility of niobium results in oxygen diffusion from the dielectric to niobium metal, if any is present. The major purpose of this project was to check the ability of NbN as a diffusion barrier and fabricate thermally stable niobium capacitors. As a first step to produce niobium capacitors, the material characterizations of reactively sputtered Nb2O5 and NbN were done. Thickness and film composition, and crystal structures of the sputtered films were obtained and the deposition parameters for the desired stoichiometry were found. Also, anodized Nb2O5 was characterized for its stoichiometry and thickness. To study the effect of nitrides on capacitance and thermal stability, Ta2O5 capacitors were initially fabricated with and without TaN. The results showed that the nitride does not affect the capacitance, and that capacitors with TaN are stable up to 150°C. In the next step, niobium capacitors were first fabricated with anodized dielectric and the oxygen diffusion issues associated with capacitor processing were studied. Reactively sputtered Nb2O5 was anodized to form complete Nb2O5 (with few oxygen vacancies) and NbN was used to sandwich the dielectric. The capacitor fabrication was not successful due to the difficulties in anodizing the sputtered dielectric. Another method, anodizing reactively sputtered Nb2O5 and a thin layer of sputtered niobium metal yielded high yield (99%) capacitors. Capacitors were fabricated with and without NbN and the results showed 93% decrease in leakage for a capacitor with ˜2000 A dielectric when NbN was present in the structure. These capacitors could withstand 20 V and showed 2.7 muA leakage current at 5 V. These results were obtained after thermal storage at 100°C and 150°C in air for 168 hours at each temperature. Two set of experiments were performed using Ta2O5 dielectric: one to determine the effect of anodization end point on the thickness (capacitance) and the second to determine the effect of boiling the dielectric on functional yield. The anodization end point experiment showed that the final current of anodization along with the anodizing voltage determines the anodic oxide thickness. The lower the current, the thicker the films produced by anodization. Therefore, it was important to specify the final current along with the anodization voltage for oxide growth rate. The capacitors formed with boiled wafers showed better functional yield 3 out of 5 times compared with the unboiled wafer. Niobium anodization was studied for the Nb--->Nb 2O5 conversion ratio and the effect of anodization bath temperature on the oxide film; a color chart was prepared for thicknesses ranging from 1900 A - 5000 A. The niobium metal to oxide conversion ratio was found to change with temperature.

Dielectric barrier discharge atmospheric cold plasma inhibits Escherichia coli 0157:H7, Salmonella, Listeria monocytogenes, and Tulane virus in Romaine lettuce

USDA-ARS?s Scientific Manuscript database

The present study investigated the effects of dielectric barrier discharge atmospheric cold plasma (DACP) treatment on the inactivation of Escherichia coli O157:H7, Salmonella, Listeria monocytogenes, and Tulane virus (TV) on Romaine lettuce, assessing the influences of moisture vaporization, modifi...

Surface Desorption Dielectric-Barrier Discharge Ionization Mass Spectrometry.

PubMed

Zhang, Hong; Jiang, Jie; Li, Na; Li, Ming; Wang, Yingying; He, Jing; You, Hong

2017-07-18

A variant of dielectric-barrier discharge named surface desorption dielectric-barrier discharge ionization (SDDBDI) mass spectrometry was developed for high-efficiency ion transmission and high spatial resolution imaging. In SDDBDI, a tungsten nanotip and the inlet of the mass spectrometer are used as electrodes, and a piece of coverslip is used as a sample plate as well as an insulating dielectric barrier, which simplifies the configuration of instrument and thus the operation. Different from volume dielectric-barrier discharge (VDBD), the microdischarges are generated on the surface at SDDBDI, and therefore the plasma density is extremely high. Analyte ions are guided directly into the MS inlet without any deflection. This configuration significantly improves the ion transmission efficiency and thus the sensitivity. The dependence of sensitivity and spatial resolution of the SDDBDI on the operation parameters were systematically investigated. The application of SDDBDI was successfully demonstrated by analysis of multiple species including amino acids, pharmaceuticals, putative cancer biomarkers, and mixtures of both fatty acids and hormones. Limits of detection (S/N = 3) were determined to be 0.84 and 0.18 pmol, respectively, for the analysis of l-alanine and metronidazole. A spatial resolution of 22 μm was obtained for the analysis of an imprinted cyclophosphamide pattern, and imaging of a "T" character was successfully demonstrated under ambient conditions. These results indicate that SDDBDI has high-efficiency ion transmission, high sensitivity, and high spatial resolution, which render it a potential tool for mass spectrometry imaging.

Homogeneous dielectric barrier discharges in atmospheric air and its influencing factor

NASA Astrophysics Data System (ADS)

Ran, Junxia; Li, Caixia; Ma, Dong; Luo, Haiyun; Li, Xiaowei

2018-03-01

The stable homogeneous dielectric barrier discharge (DBD) is obtained in atmospheric 2-3 mm air gap. It is generated using center frequency 1 kHz high voltage power supply between two plane parallel electrodes with specific alumina ceramic plates as the dielectric barriers. The discharge characteristics are studied by a measurement of its electrical discharge parameters and observation of its light emission phenomena. The results show that a large single current pulse of about 200 μs duration appearing in each voltage pulse, and its light emission is radially homogeneous and covers the entire surface of the two electrodes. The homogeneous discharge generated is a Townsend discharge during discharge. The influences of applied barrier, its thickness, and surface roughness on the transition of discharge modes are studied. The results show that it is difficult to produce a homogeneous discharge using smooth plates or alumina plate surface roughness Ra < 100 nm even at a 1 mm air gap. If the alumina plate is too thin, the discharge also transits to filamentary discharge. If it is too thick, the discharge is too weak to observe. With the increase of air gap distance and applied voltage, the discharge can also transit from a homogeneous mode to a filamentary mode. In order to generate stable and homogeneous DBD at a larger air gap, proper dielectric material, dielectric thickness, and dielectric surface roughness should be used, and proper applied voltage amplitude and frequency should also be used.

Electrical conductivity and dielectric relaxation of 2-(antipyrin-4-ylhydrazono)-2-(4-nitrophenyl)acetonitrile

NASA Astrophysics Data System (ADS)

El-Menyawy, E. M.; Zedan, I. T.; Nawar, H. H.

2014-03-01

The electrical and dielectric properties of the synthesized 2-(antipyrin-4-ylhydrazono)-2-(4-nitrophenyl)acetonitrile (AHNA) have been studied. The direct and alternating current (DC and AC) conductivities and complex dielectric constant were investigated in temperature range 303-403 K. The AC conductivity and dielectric properties of AHNA were investigated over frequency range 100 Hz-5 MHz. From DC and AC measurements, electrical conduction is found to be a thermally activated process. The frequency-dependent AC conductivity obeys Jonscher's universal power law in which the frequency exponent decreases with increasing temperature. The correlated barrier hopping (CBH) is the predominant model for describing the charge carrier transport in which the electrical parameters are evaluated. The activation energy is found to decrease with increasing frequency. The behaviors of dielectric and dielectric loss are discussed in terms of a polarization mechanism. The dielectric loss shows frequency power law from which the maximum barrier height is determined as 0.19 eV in terms of the Guintini model.

Anomalous dielectric relaxation with linear reaction dynamics in space-dependent force fields.

PubMed

Hong, Tao; Tang, Zhengming; Zhu, Huacheng

2016-12-28

The anomalous dielectric relaxation of disordered reaction with linear reaction dynamics is studied via the continuous time random walk model in the presence of space-dependent electric field. Two kinds of modified reaction-subdiffusion equations are derived for different linear reaction processes by the master equation, including the instantaneous annihilation reaction and the noninstantaneous annihilation reaction. If a constant proportion of walkers is added or removed instantaneously at the end of each step, there will be a modified reaction-subdiffusion equation with a fractional order temporal derivative operating on both the standard diffusion term and a linear reaction kinetics term. If the walkers are added or removed at a constant per capita rate during the waiting time between steps, there will be a standard linear reaction kinetics term but a fractional order temporal derivative operating on an anomalous diffusion term. The dielectric polarization is analyzed based on the Legendre polynomials and the dielectric properties of both reactions can be expressed by the effective rotational diffusion function and component concentration function, which is similar to the standard reaction-diffusion process. The results show that the effective permittivity can be used to describe the dielectric properties in these reactions if the chemical reaction time is much longer than the relaxation time.

Role of copper in time dependent dielectric breakdown of porous organo-silicate glass low-k materials

NASA Astrophysics Data System (ADS)

Zhao, Larry; Pantouvaki, Marianna; Croes, Kristof; Tőkei, Zsolt; Barbarin, Yohan; Wilson, Christopher J.; Baklanov, Mikhail R.; Beyer, Gerald P.; Claeys, Cor

2011-11-01

The role of copper in time dependent dielectric breakdown (TDDB) of a porous low-k dielectric with TaN/Ta barrier was investigated on a metal-insulator-metal capacitor configuration where Cu ions can drift into the low-k film by applying a positive potential on the top while they are not permitted to enter the low-k dielectric if a negative potential is applied on the top. No difference in TDDB performance was observed between the positive and negative bias conditions, suggesting that Cu cannot penetrate TaN/Ta barrier to play a critical role in the TDDB of porous low-k material.

(RTO) Characterization of the Time-dependent Behaviour of Dielectric Barrier Discharge Plasma Actuators

DTIC Science & Technology

2014-06-19

excited by a sine -wave signal with peak- to-peak amplitudes between 7.2 kV and 10 kV, and frequencies of 2.5 kHz and 4 kHz. The results indicate that the...side length of 0.68 m, made of transparent PMMA, to isolate it from ambient disturbances. The plasma actuator was excited by a sine -wave signal, which... Portugal , 2008. 6Hanson, R., Houser, N., and Lavoie, P., “Dielectric material degradation monitoring of dielectric barrier discharge plasma actuators

Dynamics of near-surface electric discharges and mechanisms of their interaction with the airflow

NASA Astrophysics Data System (ADS)

Leonov, Sergey B.; Adamovich, Igor V.; Soloviev, Victor R.

2016-12-01

The main focus of the review is on dynamics and kinetics of near-surface discharge plasmas, such as surface dielectric barrier discharges sustained by AC and repetitively pulsed waveforms, pulsed DC discharges, and quasi-DC discharges, generated in quiescent air and in the airflow. A number of technical issues related to plasma flow control applications are discussed in detail, including discharge development via surface ionization waves, charge transport and accumulation on dielectric surface, discharge contraction, different types of flow perturbations generated by surface discharges, and effect of high-speed flow on discharge dynamics. In the first part of the manuscript, plasma morphology and results of electrical and optical emission spectroscopy measurements are discussed. Particular attention is paid to dynamics of surface charge accumulation and dissipation, both in diffuse discharges and during development of ionization instabilities resulting in discharge contraction. Contraction leads to significant increase of both the surface area of charge accumulation and the energy coupled to the plasma. The use of alternating polarity pulse waveforms accelerates contraction of surface dielectric barrier discharges and formation of filamentary plasmas. The second part discusses the interaction of discharge plasmas with quiescent air and the external airflow. Four major types of flow perturbations have been identified: (1) low-speed near-surface jets generated by electrohydrodynamic interaction (ion wind); (2) spanwise and streamwise vortices formed by both electrohydrodynamic and thermal effects; (3) weak shock waves produced by rapid heating in pulsed discharges on sub-microsecond time scale; and (4) near-surface localized stochastic perturbations, on sub-millisecond time, detected only recently. The mechanism of plasma-flow interaction remains not fully understood, especially in filamentary surface dielectric barrier discharges. Localized quasi-DC surface discharges sustained in a high-speed flow are discussed in the third part of the review. Although dynamics of this type of the discharge is highly transient, due to its strong interaction with the flow, the resultant flow structure is stationary, including the oblique shock and the flow separation region downstream of the discharge. The oblique shock is attached to a time-averaged, wedge-shaped, near-wall plasma layer, with the shock angle controlled by the discharge power, which makes possible changing the flow structure and parameters in a controlled way. Finally, unresolved and open-ended issues are discussed in the summary.

Dielectric-barrier-discharge plasma-assisted hydrogen diffusion flame. Part 1: Temperature, oxygen, and fuel measurements by one-dimensional fs/ps rotational CARS imaging

DOE PAGES

Retter, Jonathan E.; Elliott, Gregory S.; Kearney, Sean P.

2018-02-21

One-dimensional hybrid fs/ps CARS imaging provides single-laser-shot measurements of temperature, oxygen, and hydrogen in a plasma-assisted hydrogen diffusion flame. The coaxial dielectric-barrier-discharge burner collapses the Re ~50 hydrogen diffusion flame to within ~5 mm of the burner surface at an applied AC potential of 8.75 kV at 18 kHz, coinciding nicely with the full spatial extent of the 1D CARS measurements. Translating the burner through the measurement volume allowed for measurements at numerous radial locations in increments of 1 mm with a resolution of 140 µm × 30 µm × 600 µm, sufficient to resolve spatial gradients in this unsteadymore » flame. Longer probe delays, required for improved dynamic range in regions of high temperature fluctuations, proved difficult to model as a result of a nontrivial decay in the O 2 Raman coherence arising from complexities associated with the triplet ground electronic state of the O 2 molecule. Oxygen linewidths were treated empirically using the observed O 2 coherence decay in spectra acquired from the product gases of lean, near-adiabatic H 2/air flames stabilized on a Hencken flat-flame burner. While still leading to errors up to 10% at worst, the empirically determined Raman linewidth factors eliminated any systematic error in the O 2/N 2 measurements with probe delay. Temperature measurements in the Hencken Burner flames proved to be insensitive to probe pulse delay, providing robust thermometry. Here, demonstration of this technique in both the canonical Hencken burner flames and a new DBD burner validates its effectiveness in producing multiple spatially resolved measurements in combustion environments. Measurements in the DBD burner revealed an unsteady, counterflow flattened flame structure near the fuel orifice which became unsteady as the reaction zone curves towards the surface for larger radial positions. Lastly, fluctuations in the fuel concentration were largest at the source, as the large, plasma-generated, unsteady external toroidal vortex that dominates the transport in this flame provides enhanced ventilation of the flame surface in close proximity to the fuel tube.« less

Dielectric-barrier-discharge plasma-assisted hydrogen diffusion flame. Part 1: Temperature, oxygen, and fuel measurements by one-dimensional fs/ps rotational CARS imaging

DOE Office of Scientific and Technical Information (OSTI.GOV)

Retter, Jonathan E.; Elliott, Gregory S.; Kearney, Sean P.

One-dimensional hybrid fs/ps CARS imaging provides single-laser-shot measurements of temperature, oxygen, and hydrogen in a plasma-assisted hydrogen diffusion flame. The coaxial dielectric-barrier-discharge burner collapses the Re ~50 hydrogen diffusion flame to within ~5 mm of the burner surface at an applied AC potential of 8.75 kV at 18 kHz, coinciding nicely with the full spatial extent of the 1D CARS measurements. Translating the burner through the measurement volume allowed for measurements at numerous radial locations in increments of 1 mm with a resolution of 140 µm × 30 µm × 600 µm, sufficient to resolve spatial gradients in this unsteadymore » flame. Longer probe delays, required for improved dynamic range in regions of high temperature fluctuations, proved difficult to model as a result of a nontrivial decay in the O 2 Raman coherence arising from complexities associated with the triplet ground electronic state of the O 2 molecule. Oxygen linewidths were treated empirically using the observed O 2 coherence decay in spectra acquired from the product gases of lean, near-adiabatic H 2/air flames stabilized on a Hencken flat-flame burner. While still leading to errors up to 10% at worst, the empirically determined Raman linewidth factors eliminated any systematic error in the O 2/N 2 measurements with probe delay. Temperature measurements in the Hencken Burner flames proved to be insensitive to probe pulse delay, providing robust thermometry. Here, demonstration of this technique in both the canonical Hencken burner flames and a new DBD burner validates its effectiveness in producing multiple spatially resolved measurements in combustion environments. Measurements in the DBD burner revealed an unsteady, counterflow flattened flame structure near the fuel orifice which became unsteady as the reaction zone curves towards the surface for larger radial positions. Lastly, fluctuations in the fuel concentration were largest at the source, as the large, plasma-generated, unsteady external toroidal vortex that dominates the transport in this flame provides enhanced ventilation of the flame surface in close proximity to the fuel tube.« less

Thickness-, Composition-, and Magnetic-Field-Dependent Complex Impedance Spectroscopy of Granular-Type-Barrier Co/Co-Al2O3/Co MTJs

NASA Astrophysics Data System (ADS)

Tuan, Nguyen Anh; Anh, Nguyen Tuan; Nga, Nguyen Tuyet; Tue, Nguyen Anh; Van Cuong, Giap

2016-06-01

The alternating-current (ac) electrical properties of granular-type-barrier magnetic tunnel junctions (GBMTJs) based on Co/Co x (Al2O3)1- x ( t)/Co trilayer structures have been studied using complex impedance spectroscopy (CIS). Their CIS characteristics were investigated in external magnetic fields varying from 0 kOe to 3 kOe as a function of Co composition x at 10 at.%, 25 at.%, and 35 at.%, with barrier layer thickness t of 20 nm to 90 nm. The influence of these factors on the behaviors of the ac impedance response of the GBMTJs was deeply investigated and attributed to the dielectric or conducting nature of the Co-Al2O3 barrier layer. The most remarkable typical phenomena observed in these behaviors, even appearing paradoxical, include lower impedance for thicker t for each given x, a declining trend of Z with increasing x, a clear decrease of Z with H, and especially a partition of Z into zones according to the H value. All these effects are analyzed and discussed to demonstrate that diffusion-type and mass-transfer-type phenomena can be inferred from processes such as spin tunneling and Coulomb or spin blockade in the Co-Al2O3 barrier layer.

Enabling Energy Efficiency and Polarity Control in Germanium Nanowire Transistors by Individually Gated Nanojunctions.

PubMed

Trommer, Jens; Heinzig, André; Mühle, Uwe; Löffler, Markus; Winzer, Annett; Jordan, Paul M; Beister, Jürgen; Baldauf, Tim; Geidel, Marion; Adolphi, Barbara; Zschech, Ehrenfried; Mikolajick, Thomas; Weber, Walter M

2017-02-28

Germanium is a promising material for future very large scale integration transistors, due to its superior hole mobility. However, germanium-based devices typically suffer from high reverse junction leakage due to the low band-gap energy of 0.66 eV and therefore are characterized by high static power dissipation. In this paper, we experimentally demonstrate a solution to suppress the off-state leakage in germanium nanowire Schottky barrier transistors. Thereto, a device layout with two independent gates is used to induce an additional energy barrier to the channel that blocks the undesired carrier type. In addition, the polarity of the same doping-free device can be dynamically switched between p- and n-type. The shown germanium nanowire approach is able to outperform previous polarity-controllable device concepts on other material systems in terms of threshold voltages and normalized on-currents. The dielectric and Schottky barrier interface properties of the device are analyzed in detail. Finite-element drift-diffusion simulations reveal that both leakage current suppression and polarity control can also be achieved at highly scaled geometries, providing solutions for future energy-efficient systems.

The Coulomb based magneto-electric coupling in multiferroic tunnel junctions and granular multiferroics

NASA Astrophysics Data System (ADS)

Udalov, O. G.; Beloborodov, I. S.

2018-05-01

We study magneto-electric effect in two systems: i) multiferroic tunnel junction (MFTJ) - magnetic tunnel junction with ferroelectric barrier and ii) granular multiferroic (GMF) in which ferromagnetic (FM) metallic grains embedded into ferroelectric matrix. We show that the Coulomb interaction influences the magnetic state of the system in several ways: i) through the spin-dependent part of the Coulomb interaction; ii) due to the Coulomb blockade effect suppressing electron hopping and therefore reducing magnetic coupling; and iii) through image forces and polarization screening that modify the barrier for electrons in MFTJ and GMF. We show that in the absence of spin-orbit or strain-mediated coupling magneto-electric effect appears in GMF and MFTJ. The Coulomb interaction depends on the dielectric properties of the system. For GMF it depends on the dielectric constant of FE matrix and for MFTJ on the dielectric constant of the FE barrier. Applying external electric field one can tune the dielectric constant and the Coulomb interaction. Thus, one can control magnetic state with electric field.

Ambient-temperature trap/release of arsenic by dielectric barrier discharge and its application to ultratrace arsenic determination in surface water followed by atomic fluorescence spectrometry

USDA-ARS?s Scientific Manuscript database

A novel dielectric barrier discharge reactor (DBDR) was utilized to trap/release arsenic coupled to hydride generation atomic fluorescence spectrometry (HGAFS). On the DBD principle, the precise and accurate control of trap/release procedures was fulfilled at ambient temperature, and an analytical m...

Dielectric barrier discharge and jet type plasma surface modifications of hybrid polymeric poly (ε-caprolactone)/chitosan scaffolds.

PubMed

Ozkan, Ozan; Turkoglu Sasmazel, Hilal

2018-04-01

In this study, dry air plasma jet and dielectric barrier discharge Ar + O 2 or Ar + N 2 plasma modifications and their effects on wettability, topography, functionality and biological efficiency of the hybrid polymeric poly (ε-caprolactone)/chitosan scaffolds were reported. The samples treated with Ar + O 2 dielectric barrier discharge plasma (80 sccm O 2 flow rate, 3-min treatment) or with dry air plasma jet (15-cm nozzle-sample distance, 13-min treatment) had the closest wettability (49.11 ± 1.83 and 53.60 ± 0.95, respectively) to the commercial tissue culture polystyrene used for cell cultivation. Scanning electron microscopy images and X-ray photoelectron spectrometry analysis showed increase in topographical roughness and OH/NH 2 functionality, respectively. Increased fluid uptake capacity for the scaffolds treated with Ar + O 2 dielectric barrier discharge plasma (73.60% ± 1.78) and dry air plasma jet (72.48% ± 0.75) were also noted. Finally, initial cell attachment as well as seven-day cell viability, growth and proliferation performances were found to be significantly better for both plasma treated scaffolds than for untreated scaffolds.

Demonstration of organic volatile decomposition and bacterial sterilization by miniature dielectric barrier discharges on low-temperature cofired ceramic electrodes

NASA Astrophysics Data System (ADS)

Kim, Duk-jae; Shim, Yeun-keun; Park, Jeongwon; Kim, Hyung-jun; Han, Jeon-geon

2016-04-01

Nonthermal atmospheric-pressure plasma discharge is designed with low-temperature cofired ceramic (LTCC) electrodes to achieve dielectric barrier surface discharge (DBSD). The environmental requirement (below 0.05 ppm) of the amount of byproducts (ozone and NO x ) produced during the process was met by optimizing the electrode design to produce a high dielectric barrier discharge for low-voltage (∼700 V) operation and minimizing the distance between electrodes to improve the plasma discharging efficiency. The concentrations of volatile organic compounds (VOCs) within interior cabins of commercial vehicles were significantly reduced after 1-h treatment to improve air quality cost-effectively. This atmospheric-pressure plasma process was demonstrated for the sterilization of Escherichia coli to prevent food poisoning during the preservation of food in refrigerators.

Numerical study of the influence of dielectric tube on propagation of atmospheric pressure plasma jet based on coplanar dielectric barrier discharge

NASA Astrophysics Data System (ADS)

Haixin, HU; Feng, HE; Ping, ZHU; Jiting, OUYANG

2018-05-01

A 2D fluid model was employed to simulate the influence of dielectric on the propagation of atmospheric pressure helium plasma jet based on coplanar dielectric barrier discharge (DBD). The spatio-temporal distributions of electron density, ionization rate, electrical field, spatial charge and the spatial structure were obtained for different dielectric tubes that limit the helium flow. The results show that the change of the relative permittivity of the dielectric tube where the plasma jet travels inside has no influence on the formation of DBD itself, but has great impact on the jet propagation. The velocity of the plasma jet changes drastically when the jet passes from a tube of higher permittivity to one of lower permittivity, resulting in an increase in jet length, ionization rate and electric field, as well as a change in the distribution of space charges and discharge states. The radius of the dielectric tube has a great influence on the ring-shaped or solid bullet structure. These results can well explain the behavior of the plasma jet from the dielectric tube into the ambient air and the hollow bullet in experiments.

THE STUDY OF HIGH DIELECTRIC CONSTANT MECHANISM OF La-DOPED Ba0.67Sr0.33TiO3 CERAMICS

NASA Astrophysics Data System (ADS)

Xu, Jing; He, Bo; Liu, Han Xing

It is a common and effective method to enhance the dielectric properties of BST ceramics by adding rare-earth elements. In this paper, it is important to analyze the cause of the high dielectric constant behavior of La-doped BST ceramics. The results show that proper rare earth La dopant (0.2≤x≤0.7) may greatly increase the dielectric constant of BST ceramics, and also improve the temperature stability, evidently. According to the current-voltage (J-V) characteristics, the proper La-doped BST ceramics may reach the better semiconductivity, with the decrease and increase in La doping, the ceramics are insulators. By using the Schottky barrier model and electric microstructure model to find the surface or grain boundary potential barrier height, the width of the depletion layer and grain size do play an important role in impacting the dielectric constant.

Origin of the colossal dielectric response of Pr0.6 Ca0.4 Mn O3

NASA Astrophysics Data System (ADS)

Biškup, N.; de Andrés, A.; Martinez, J. L.; Perca, C.

2005-07-01

We report the detailed study of dielectric response of Pr0.6Ca0.4MnO3 (PCMO), a member of the manganite family showing colossal magnetoresistance. Measurements have been performed on four polycrystalline samples and four single crystals, allowing us to compare and extract the essence of dielectric response in the material. High-frequency dielectric function is found to be ɛHF=30 , as expected for the perovskite material. Dielectric relaxation is found in the frequency window of 20Hzto1MHz at temperatures of 50-200K that yields to colossal low-frequency dielectric function, i.e., the static dielectric constant. The static dielectric constant is always colossal, but varies considerably in different samples from ɛ(0)=103to105 . The measured data can be simulated very well by blocking (surface barrier) capacitance in series with sample resistance. This indicates that the large dielectric constant in PCMO arises from the Schottky barriers at electrical contacts. Measurements in magnetic field and with dc bias support this interpretation. Colossal magnetocapacitance observed in the title compound is thus attributed to extrinsic effects. Weak anomaly at the charge ordering temperature can also be attributed to interplay of sample and contact resistance. We comment on our results in the framework of related studies by other groups.

Identification of structural relaxation in the dielectric response of water

DOE PAGES

Hansen, Jesper S.; Kisliuk, Alexander; Sokolov, Alexei P.; ...

2016-06-09

One century ago pioneering dielectric results obtained for water and n-alcohols triggered the advent of molecular rotation diffusion theory considered by Debye to describe the primary dielectric absorption in these liquids. Here, comparing dielectric, viscoelastic, and light scattering results, we unambiguously demonstrate that the structural relaxation appears only as a high-frequency shoulder in the dielectric spectra of water. In contrast, the main dielectric peak is related to a supramolecular structure, analogous to the Debye-like peak observed in monoalcohols.

Transition Control with Dielectric Barrier Discharge Plasmas

DTIC Science & Technology

2010-10-01

AFRL-AFOSR-UK-TR-2011-0007 Transition Control with Dielectric Barrier Discharge Plasmas Cameron Tropea Technische...Discharge Plasmas 5a. CONTRACT NUMBER FA8655-08-1-3032 5b. GRANT NUMBER Grant 08-3032 5c. PROGRAM ELEMENT NUMBER 61102F 6. AUTHOR(S...is to control natural boundary-layer transition through the use of plasma actuators. Transition delay or even suppression has its merits not only in

Influence of ultrasonic irradiation on ozone generation in a dielectric barrier discharge

NASA Astrophysics Data System (ADS)

Kusano, Y.; Drews, J.; Leipold, F.; Fateev, A.; Bardenshtein, A.; Krebs, N.

2012-12-01

An atmospheric pressure dielectric barrier discharge (DBD) was generated in an N2/O2 gas mixture at room temperature with and without ultrasonic irradiation to investigate ozone production. Powerful ultrasonic irradiation with the sound pressure level of approximately 150 dB into the DBD can enhance ozone production especially when the DBD was driven at a frequency of 15 kHz.

Effect of substitution group on dielectric properties of 4H-pyrano [3, 2-c] quinoline derivatives thin films

NASA Astrophysics Data System (ADS)

H, M. Zeyada; F, M. El-Taweel; M, M. El-Nahass; M, M. El-Shabaan

2016-07-01

The AC electrical conductivity and dielectrical properties of 2-amino-6-ethyl-5-oxo-4-(3-phenoxyphenyl)-5,6-dihydro-4H-pyrano[3, 2-c]quinoline-3-carbonitrile (Ph-HPQ) and 2-amino-4-(2-chlorophenyl)-6-ethyl-5-oxo-5,6-dihydro-4H-pyrano [3, 2-c] quinoline-3-carbonitrile (Ch-HPQ) thin films were determined in the frequency range of 0.5 kHz-5 MHz and the temperature range of 290-443 K. The AC electrical conduction of both compounds in thin film form is governed by the correlated barrier hopping (CBH) mechanism. Some parameters such as the barrier height, the maximum barrier height, the density of charges, and the hopping distance were determined as functions of temperature and frequency. The phenoxyphenyl group has a greater influence on those parameters than the chlorophenyl group. The AC activation energies were determined at different frequencies and temperatures. The dielectric behaviors of Ph-HPQ and Ch-HPQ were investigated using the impedance spectroscopy technique. The impedance data are presented in Nyquist diagrams for different temperatures. The Ch-HPQ films have higher impedance than the Ph-HPQ films. The real dielectric constant and dielectric loss show a remarkable dependence on the frequency and temperature. The Ph-HPQ has higher dielectric constants than the Ch-HPQ.

The formation of diffuse discharge by short-front nanosecond voltage pulses and the modification of dielectrics in this discharge

NASA Astrophysics Data System (ADS)

Orlovskii, V. M.; Panarin, V. A.; Shulepov, M. A.

2014-07-01

The dynamics of diffuse discharge formation under the action of nanosecond voltage pulses with short fronts (below 1 ns) in the absence of a source of additional preionization and the influence of a dielectric film on this process have been studied. It is established that the diffuse discharge is induced by the avalanche multiplication of charge initiated by high-energy electrons and then maintained due to secondary breakdowns propagating via ionized gas channels. If a dielectric film (polyethylene, Lavsan, etc.) is placed on the anode, then multiply repeated discharge will lead to surface and bulk modification of the film material. Discharge-treated polyethylene film exhibits a change in the optical absorption spectrum in the near-IR range.

First-principles multiple-barrier diffusion theory. The case study of interstitial diffusion in CdTe

DOE PAGES

Yang, Ji -Hui; Park, Ji -Sang; Kang, Joongoo; ...

2015-02-17

The diffusion of particles in solid-state materials generally involves several sequential thermal-activation processes. However, presently, diffusion coefficient theory only deals with a single barrier, i.e., it lacks an accurate description to deal with multiple-barrier diffusion. Here, we develop a general diffusion coefficient theory for multiple-barrier diffusion. Using our diffusion theory and first-principles calculated hopping rates for each barrier, we calculate the diffusion coefficients of Cd, Cu, Te, and Cl interstitials in CdTe for their full multiple-barrier diffusion pathways. As a result, we found that the calculated diffusivity agrees well with the experimental measurement, thus justifying our theory, which is generalmore » for many other systems.« less

Comparison of three dielectric barrier discharges regarding their physical characteristics and influence on the adhesion properties on maple, high density fiberboards and wood plastic composite

NASA Astrophysics Data System (ADS)

Peters, F.; Hünnekens, B.; Wieneke, S.; Militz, H.; Ohms, G.; Viöl, W.

2017-11-01

In this study, three different dielectric barrier discharges, based on the same setup and run with the same power supply, are characterized by emission spectroscopy with regards to the reduced electrical field strength, and the rotational, vibrational and electron temperature. To compare discharges common for the treatment on wood, a coplanar surface barrier discharge, a direct dielectric barrier discharge and a jet system/remote plasma are chosen. To minimize influences due to the setups or power, the discharges are realized with the same electrodes and power supply and normalized to the same power. To evaluate the efficiency of the different discharges and the influence on treated materials, the surface free energy is determined on a maple wood, high density fiberboard and wood plastic composite. The influence is measured depending on the treatment time, with the highest impact in the time of 5 s.

Leakage current and charging/discharging processes in barrier-type anodic alumina thin films for use in metal-insulator-metal capacitors

NASA Astrophysics Data System (ADS)

Hourdakis, E.; Koutsoureli, M.; Papaioannou, G.; Nassiopoulou, A. G.

2018-06-01

Barrier-type anodic alumina thin films are interesting for use in high capacitance density metal-insulator-metal capacitors due to their excellent dielectric properties at small thickness. This thickness is easily controlled by the anodization voltage. In previous papers we studied the main parameters of interest of the Al/barrier-type anodic alumina/Al structure for use in RF applications and showed the great potential of barrier-type anodic alumina in this respect. In this paper, we investigated in detail charging/discharging processes and leakage current of the above dielectric material. Two different sets of metal-insulator-metal capacitors were studied, namely, with the top Al electrode being either e-gun deposited or sputtered. The dielectric constant of the barrier-type anodic alumina was found at 9.3. Low leakage current was observed in all samples studied. Furthermore, depending on the film thickness, field emission following the Fowler-Nordheim mechanism was observed above an applied electric field. Charging of the anodic dielectric was observed, occurring in the bulk of the anodic layer. The stored charge was of the order of few μC/cm2 and the calculated trap density ˜2 × 1018 states/cm3, the most probable origin of charge traps being, in our opinion, positive electrolyte ions trapped in the dielectric during anodization. We do not think that oxygen vacancies play an important role, since their existence would have a more important impact on the leakage current characteristics, such as resistive memory effects or significant changes during annealing, which were not observed. Finally, discharging characteristic times as high as 5 × 109 s were measured.

Mass Spectrometry Vapor Analysis for Improving Explosives Detection Canine Proficiency

DTIC Science & Technology

2017-02-10

ionization (SESI), 8,19-21 dielectric barrier discharge ionization (DBDI), 21,22 selected-ion-flow-tube (SIFT), 23,24 and proton transfer reaction...handled only with wood- en or Teflon® spatulas to prevent static discharge . Using these precautions, we never experienced an accidental detonation...ionization (SESI) and dielectric barrier discharge ionization (DBDI) sources were used for vapor ioni- zation. Source temperature was held at 100 o C

Effects of surface dielectric barrier discharge on aerodynamic characteristic of train

NASA Astrophysics Data System (ADS)

Dong, Lei; Gao, Guoqiang; Peng, Kaisheng; Wei, Wenfu; Li, Chunmao; Wu, Guangning

2017-07-01

High-speed railway today has become an indispensable means of transportation due to its remarkable advantages, including comfortability, convenience and less pollution. The increase in velocity makes the air drag become the main source of energy consumption, leading to receiving more and more concerns. The surface dielectric barrier discharge has shown some unique characteristics in terms of active airflow control. In this paper, the influences of surface dielectric barrier discharge on the aerodynamic characteristics of a scaled train model have been studied. Aspects of the discharge power consumption, the temperature distribution, the velocity of induced flow and the airflow field around the train model were considered. The applied AC voltage was set in the range of 20 kV to 28 kV, with a fixed frequency of 9 kHz. Results indicated that the discharge power consumption, the maximum temperature and the induced flow velocity increased with increasing applied voltage. Mechanisms of applied voltage influencing these key parameters were discussed from the point of the equivalent circuit. The airflow field around the train model with different applied voltages was observed by the smoke visualization experiment. Finally, the effects of surface dielectric barrier discharge on the train drag reduction with different applied voltages were analyzed.

Ambient diode laser desorption dielectric barrier discharge ionization mass spectrometry of nonvolatile chemicals.

PubMed

Gilbert-López, Bienvenida; Schilling, Michael; Ahlmann, Norman; Michels, Antje; Hayen, Heiko; Molina-Díaz, Antonio; García-Reyes, Juan F; Franzke, Joachim

2013-03-19

In this work, the combined use of desorption by a continuous wave near-infrared diode laser and ionization by a dielectric barrier discharge-based probe (laser desorption dielectric barrier discharge ionization mass spectrometry (LD-DBDI-MS)) is presented as an ambient ionization method for the mass spectrometric detection of nonvolatile chemicals on surfaces. A separation of desorption and ionization processes could be verified. The use of the diode laser is motivated by its low cost, ease of use, and small size. To achieve an efficient desorption, the glass substrates are coated at the back side with a black point (target point, where the sample is deposited) in order to absorb the energy offered by the diode laser radiation. Subsequent ionization is accomplished by a helium plasmajet generated in the dielectric barrier discharge source. Examples on the application of this approach are shown in both positive and negative ionization modes. A wide variety of multiclass species with low vapor pressure were tested including pesticides, pharmaceuticals and explosives (reserpine, roxithromycin, propazine, prochloraz, spinosad, ampicillin, dicloxacillin, enrofloxacin, tetracycline, oxytetracycline, erythromycin, spinosad, cyclo-1,3,5,7-tetramethylene tetranitrate (HMX), and cyclo-1,3,5-trimethylene trinitramine (RDX)). A comparative evaluation revealed that the use of the laser is advantageous, compared to just heating the substrate surface.

Design and testing of 45 kV, 50 kHz pulse power supply for dielectric barrier discharges

NASA Astrophysics Data System (ADS)

Sharma, Surender Kumar; Shyam, Anurag

2016-10-01

The design, construction, and testing of high frequency, high voltage pulse power supply are reported. The purpose of the power supply is to generate dielectric barrier discharges for industrial applications. The power supply is compact and has the advantage of low cost, over current protection, and convenient control for voltage and frequency selection. The power supply can generate high voltage pulses of up to 45 kV at the repetitive frequency range of 1 kHz-50 kHz with 1.2 kW input power. The output current of the power supply is limited to 500 mA. The pulse rise time and fall time are less than 2 μs and the pulse width is 2 μs. The power supply is short circuit proof and can withstand variable plasma load conditions. The power supply mainly consists of a half bridge series resonant converter to charge an intermediate capacitor, which discharges through a step-up transformer at high frequency to generate high voltage pulses. Semiconductor switches and amorphous cores are used for power modulation at higher frequencies. The power supply is tested with quartz tube dielectric barrier discharge load and worked stably. The design details and the performance of the power supply on no load and dielectric barrier discharge load are presented.

Design and testing of 45 kV, 50 kHz pulse power supply for dielectric barrier discharges.

PubMed

Sharma, Surender Kumar; Shyam, Anurag

2016-10-01

The design, construction, and testing of high frequency, high voltage pulse power supply are reported. The purpose of the power supply is to generate dielectric barrier discharges for industrial applications. The power supply is compact and has the advantage of low cost, over current protection, and convenient control for voltage and frequency selection. The power supply can generate high voltage pulses of up to 45 kV at the repetitive frequency range of 1 kHz-50 kHz with 1.2 kW input power. The output current of the power supply is limited to 500 mA. The pulse rise time and fall time are less than 2 μs and the pulse width is 2 μs. The power supply is short circuit proof and can withstand variable plasma load conditions. The power supply mainly consists of a half bridge series resonant converter to charge an intermediate capacitor, which discharges through a step-up transformer at high frequency to generate high voltage pulses. Semiconductor switches and amorphous cores are used for power modulation at higher frequencies. The power supply is tested with quartz tube dielectric barrier discharge load and worked stably. The design details and the performance of the power supply on no load and dielectric barrier discharge load are presented.

Atmospheric pressure dielectric barrier discharges for sterilization and surface treatment

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chin, O. H.; Lai, C. K.; Choo, C. Y.

2015-04-24

Atmospheric pressure non-thermal dielectric barrier discharges can be generated in different configurations for different applications. For sterilization, a parallel-plate electrode configuration with glass dielectric that discharges in air was used. Gram-negative bacteria (Escherichia coli and Salmonella enteritidis) and Gram-positive bacteria (Bacillus cereus) were successfully inactivated using sinusoidal high voltage of ∼15 kVp-p at 8.5 kHz. In the surface treatment, a hemisphere and disc electrode arrangement that allowed a plasma jet to be extruded under controlled nitrogen gas flow (at 9.2 kHz, 20 kVp-p) was applied to enhance the wettability of PET (Mylar) film.

Atmospheric pressure dielectric barrier discharges for sterilization and surface treatment

NASA Astrophysics Data System (ADS)

Chin, O. H.; Lai, C. K.; Choo, C. Y.; Wong, C. S.; Nor, R. M.; Thong, K. L.

2015-04-01

Atmospheric pressure non-thermal dielectric barrier discharges can be generated in different configurations for different applications. For sterilization, a parallel-plate electrode configuration with glass dielectric that discharges in air was used. Gram-negative bacteria (Escherichia coli and Salmonella enteritidis) and Gram-positive bacteria (Bacillus cereus) were successfully inactivated using sinusoidal high voltage of ˜15 kVp-p at 8.5 kHz. In the surface treatment, a hemisphere and disc electrode arrangement that allowed a plasma jet to be extruded under controlled nitrogen gas flow (at 9.2 kHz, 20 kVp-p) was applied to enhance the wettability of PET (Mylar) film.

Method for applying a diffusion barrier interlayer for high temperature components

DOEpatents

Wei, Ronghua; Cheruvu, Narayana S.

2016-03-08

A coated substrate and a method of forming a diffusion barrier coating system between a substrate and a MCrAl coating, including a diffusion barrier coating deposited onto at least a portion of a substrate surface, wherein the diffusion barrier coating comprises a nitride, oxide or carbide of one or more transition metals and/or metalloids and a MCrAl coating, wherein M includes a transition metal or a metalloid, deposited on at least a portion of the diffusion barrier coating, wherein the diffusion barrier coating restricts the inward diffusion of aluminum of the MCrAl coating into the substrate.

Evaluation of Dielectric-Barrier-Discharge Actuator Substrate Materials

NASA Technical Reports Server (NTRS)

Wilkinson, Stephen P.; Siochi, Emilie J.; Sauti, Godfrey; Xu, Tian-Bing; Meador, Mary Ann; Guo, Haiquan

2014-01-01

A key, enabling element of a dielectric barrier discharge (DBD) actuator is the dielectric substrate material. While various investigators have studied the performance of different homogeneous materials, most often in the context of related DBD experiments, fundamental studies focused solely on the dielectric materials have received less attention. The purpose of this study was to conduct an experimental assessment of the body-force-generating performance of a wide range of dielectric materials in search of opportunities to improve DBD actuator performance. Materials studied included commonly available plastics and glasses as well as a custom-fabricated polyimide aerogel. Diagnostics included static induced thrust, electrical circuit parameters for 2D surface discharges and 1D volume discharges, and dielectric material properties. Lumped-parameter circuit simulations for the 1D case were conducted showing good correspondence to experimental data provided that stray capacitances are included. The effect of atmospheric humidity on DBD performance was studied showing a large influence on thrust. The main conclusion is that for homogeneous, dielectric materials at forcing voltages less than that required for streamer formation, the material chemical composition appears to have no effect on body force generation when actuator impedance is properly accounted for.

Solvent Dependence of Double Proton Transfer in the Formic Acid-Formamidine Complex: Path Integral Molecular Dynamics Investigation.

PubMed

Kungwan, Nawee; Ngaojampa, Chanisorn; Ogata, Yudai; Kawatsu, Tsutomu; Oba, Yuki; Kawashima, Yukio; Tachikawa, Masanori

2017-10-05

Solvent dependence of double proton transfer in the formic acid-formamidine (FA-FN) complex at room temperature was investigated by means of ab initio path integral molecular dynamics (AIPIMD) simulation with taking nuclear quantum and thermal effects into account. The conductor-like screening model (COSMO) was applied for solvent effect. In comparison with gas phase, double proton delocalization between two heavy atoms (O and N) in FA-FN were observed with reduced proton transfer barrier height in low dielectric constant medium (<4.8). For dielectric constant medium at 4.8, the chance of finding these two protons are more pronounced due to the solvent effect which completely washes out the proton transfer barrier. In the case of higher dielectric constant medium (>4.8), the ionic species becomes more stable than the neutral ones and the formate anion and formamidium cation are thermodynamically stable. For ab initio molecular dynamics simulation, in low dielectric constant medium (<4.8) a reduction of proton transfer barrier with solvent effect is found to be less pronounced than the AIPIMD due to the absence of nuclear quantum effect. Moreover, the motions of FA-FN complex are significantly different with increasing dielectric constant medium. Such a difference is revealed in detail by the principal component analysis.

Dielectric properties and nonlinear I-V electrical behavior of (Li1+, Al3+) co-doped CaCu3Ti4O12 ceramics

NASA Astrophysics Data System (ADS)

Sun, Li; Ni, Qing; Guo, Jianqin; Cao, Ensi; Hao, Wentao; Zhang, Yongjia; Ju, Lin

2018-06-01

(Li1+, Al3+) co-doped CaCu3Ti4O12 ceramics (CaCu3-2 x Li x Al x Ti4O12, x = 0.05, 0.1, 0.15) were prepared by a sol-gel method and were sintered at 1020-1080 °C for 8 h to improve the geometric microstructure, dielectric and nonlinear I-V electrical properties. Notably, very high dielectric constant of 1 × 105 with good dielectric-frequency as well as dielectric-temperature stability can be achieved in CaCu2.8Li0.1Al0.1Ti4O12 ceramic sintered at 1060 °C. The average grain sizes, resistivity and the non-Ohmic properties are also improved compared to pure CaCu3Ti4O12. These results indicate that (Li1+, Al3+) co-doping at the Cu2+ site can improve the dielectric properties of CaCu3Ti4O12, supporting the internal barrier layer capacitance effect of Schottky barriers at grain boundaries.

Proton Transfer Dynamics at the Membrane/Water Interface: Dependence on the Fixed and Mobile pH Buffers, on the Size and Form of Membrane Particles, and on the Interfacial Potential Barrier

PubMed Central

Cherepanov, Dmitry A.; Junge, Wolfgang; Mulkidjanian, Armen Y.

2004-01-01

Crossing the membrane/water interface is an indispensable step in the transmembrane proton transfer. Elsewhere we have shown that the low dielectric permittivity of the surface water gives rise to a potential barrier for ions, so that the surface pH can deviate from that in the bulk water at steady operation of proton pumps. Here we addressed the retardation in the pulsed proton transfer across the interface as observed when light-triggered membrane proton pumps ejected or captured protons. By solving the system of diffusion equations we analyzed how the proton relaxation depends on the concentration of mobile pH buffers, on the surface buffer capacity, on the form and size of membrane particles, and on the height of the potential barrier. The fit of experimental data on proton relaxation in chromatophore vesicles from phototropic bacteria and in bacteriorhodopsin-containing membranes yielded estimates for the interfacial potential barrier for H+/OH− ions of ∼120 meV. We analyzed published data on the acceleration of proton equilibration by anionic pH buffers and found that the height of the interfacial barrier correlated with their electric charge ranging from 90 to 120 meV for the singly charged species to >360 meV for the tetra-charged pyranine. PMID:14747306

Collective Phenomena In Volume And Surface Barrier Discharges

NASA Astrophysics Data System (ADS)

Kogelschatz, U.

2010-07-01

Barrier discharges are increasingly used as a cost-effective means to produce non-equilibrium plasmas at atmospheric pressure. This way, copious amounts of electrons, ions, free radicals and excited species can be generated without appreciable gas heating. In most applications the barrier is made of dielectric material. In laboratory experiments also the use of resistive, ferroelectric and semiconducting materials has been investigated, also porous ceramic layers and dielectric barriers with controlled surface conductivity. Major applications utilizing mainly dielectric barriers include ozone generation, surface cleaning and modification, polymer and textile treatment, sterilization, pollution control, CO2 lasers, excimer lamps, plasma display panels (flat TV screens). More recent research efforts are also devoted to biomedical applications and to plasma actuators for flow control. Sinu- soidal feeding voltages at various frequencies as well as pulsed excitation schemes are used. Volume as well as surface barrier discharges can exist in the form of filamentary, regularly patterned or laterally homogeneous discharges. Reviews of the subject and the older literature on barrier discharges were published by Kogelschatz (2002, 2003), by Wagner et al. (2003) and by Fridman et al. (2005). A detailed discussion of various properties of barrier discharges can also be found in the recent book "Non-Equilibrium Air Plasmas at Atmospheric Pressure" by Becker et al. (2005). The physical effects leading to collective phenomena in volume and surface barrier discharges will be discussed in detail. Special attention will be given to self-organization of current filaments. Main similarities and differences of the two types of barrier discharges will be elaborated.

AC electrical conductivity and dielectric relaxation studies on n-type organic thin films of N, N‧-Dimethyl-3,4,9,10-perylenedicarboximide (DMPDC)

NASA Astrophysics Data System (ADS)

Qashou, Saleem I.; Darwish, A. A. A.; Rashad, M.; Khattari, Z.

2017-11-01

Both Alternating current (AC) conductivity and dielectric behavior of n-type organic thin films of N, N‧-Dimethyl-3,4,9,10-perylenedicarboximide (DMPDC) have been investigated. Fourier transformation infrared (FTIR) spectroscopy is used for identifying both powder and film bonds which confirm that there are no observed changes in the bonds between the DMPDC powder and evaporated films. The dependence of AC conductivity on the temperature for DMPDC evaporated films was explained by the correlated barrier hopping (CBH) model. The calculated barrier height using CBH model shows a decreasing behavior with increasing temperature. The mechanism of dielectric relaxation was interpreted on the basis of the modulus of the complex dielectric. The calculated activation energy of the relaxation process was found to be 0.055 eV.

On the mechanism of pattern formation in glow dielectric barrier discharge

DOE Office of Scientific and Technical Information (OSTI.GOV)

Qiao, Yajun; Li, Ben; Ouyang, Jiting, E-mail: jtouyang@bit.edu.cn

2016-01-15

The formation mechanism of pattern in glow dielectric barrier discharge is investigated by two-dimensional fluid modeling. Experimental results are shown for comparison. The simulation results show that the non-uniform distribution of space charges makes the discharge be enhanced in the high-density region but weakened in its neighborhood, which is considered as an activation-inhibition effect. This effect shows through during a current pulse (one discharge event) but also in a certain period of time after discharge that determines a driving frequency range for the non-uniformity of space charges to be enhanced. The effects of applied voltage, surface charge, electrode boundary, andmore » external field are also discussed. All these factors affect the formation of dielectric-barrier-discharge pattern by changing the distribution or the dynamics of space charges and hence the activation-inhibition effect of non-uniform space charges.« less

Apoplastic Diffusion Barriers in Arabidopsis

PubMed Central

Schreiber, Lukas; Franke, Rochus Benni; Geldner, Niko; Reina-Pinto, José J.; Kunst, Ljerka

2013-01-01

During the development of Arabidopsis and other land plants, diffusion barriers are formed in the apoplast of specialized tissues within a variety of plant organs. While the cuticle of the epidermis is the primary diffusion barrier in the shoot, the Casparian strips and suberin lamellae of the endodermis and the periderm represent the diffusion barriers in the root. Different classes of molecules contribute to the formation of extracellular diffusion barriers in an organ- and tissue-specific manner. Cutin and wax are the major components of the cuticle, lignin forms the early Casparian strip, and suberin is deposited in the stage II endodermis and the periderm. The current status of our understanding of the relationships between the chemical structure, ultrastructure and physiological functions of plant diffusion barriers is discussed. Specific aspects of the synthesis of diffusion barrier components and protocols that can be used for the assessment of barrier function and important barrier properties are also presented. PMID:24465172

Alternating current characterization of nano-Pt(II) octaethylporphyrin (PtOEP) thin film as a new organic semiconductor

NASA Astrophysics Data System (ADS)

M, Dongol; M, M. El-Nahass; A, El-Denglawey; A, A. Abuelwafa; T, Soga

2016-06-01

Alternating current (AC) conductivity and dielectric properties of thermally evaporated Au/PtOEP/Au thin films are investigated each as a function of temperature (303 K-473 K) and frequency (50 Hz-5 MHz). The frequency dependence of AC conductivity follows the Jonscher universal dynamic law. The AC-activation energies are determined at different frequencies. It is found that the correlated barrier hopping (CBH) model is the dominant conduction mechanism. The variation of the frequency exponent s with temperature is analyzed in terms of the CBH model. Coulombic barrier height W m , hopping distance R ω , and the density of localized states N(E F) are valued at different frequencies. Dielectric constant ɛ 1(ω,T) and dielectric loss ɛ 2(ω,T) are discussed in terms of the dielectric polarization process. The dielectric modulus shows the non-Debye relaxation in the material. The extracted relaxation time by using the imaginary part of modulus (M″) is found to follow the Arrhenius law.

Mach 5 bow shock control by a nanosecond pulse surface dielectric barrier discharge

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nishihara, M.; Takashima, K.; Rich, J. W.

2011-06-15

Bow shock perturbations in a Mach 5 air flow, produced by low-temperature, nanosecond pulse, and surface dielectric barrier discharge (DBD), are detected by phase-locked schlieren imaging. A diffuse nanosecond pulse discharge is generated in a DBD plasma actuator on a surface of a cylinder model placed in air flow in a small scale blow-down supersonic wind tunnel. Discharge energy coupled to the actuator is 7.3-7.8 mJ/pulse. Plasma temperature inferred from nitrogen emission spectra is a few tens of degrees higher than flow stagnation temperature, T = 340 {+-} 30 K. Phase-locked Schlieren images are used to detect compression waves generatedmore » by individual nanosecond discharge pulses near the actuator surface. The compression wave propagates upstream toward the baseline bow shock standing in front of the cylinder model. Interaction of the compression wave and the bow shock causes its displacement in the upstream direction, increasing shock stand-off distance by up to 25%. The compression wave speed behind the bow shock and the perturbed bow shock velocity are inferred from the Schlieren images. The effect of compression waves generated by nanosecond discharge pulses on shock stand-off distance is demonstrated in a single-pulse regime (at pulse repetition rates of a few hundred Hz) and in a quasi-continuous mode (using a two-pulse sequence at a pulse repetition rate of 100 kHz). The results demonstrate feasibility of hypersonic flow control by low-temperature, repetitive nanosecond pulse discharges.« less

Time history of diesel particle deposition in cylindrical dielectric barrier discharge reactors

NASA Astrophysics Data System (ADS)

Talebizadeh, P.; Rahimzadeh, H.; Ahmadi, G.; Brown, R.; Inthavong, K.

2016-12-01

Non-thermal plasma (NTP) treatment reactors have recently been developed for elimination of diesel particulate matter for reducing both the mass and number concentration of particles. The role of the plasma itself is obscured by the phenomenon of particle deposition on the reactor surface. Therefore, in this study, the Lagrangian particle transport model is used to simulate the dispersion and deposition of nano-particles in the range of 5 to 500 nm in a NTP reactor in the absence of an electric field. A conventional cylindrical dielectric barrier discharge reactor is selected for the analysis. Brownian diffusion, gravity and Saffman lift forces were included in the simulations, and the deposition efficiencies of different sized diesel particles were studied. The results show that for the studied particle diameters, the effect of Saffman lift is negligible and gravity only affects the motion of particles with a diameter of 500 nm or larger. Time histories of particle transport and deposition were evaluated for one-time injection and a continuous (multiple-time) injection. The results show that the number of deposited particles for one-time injection is identical to the number of deposited particles for multiple-time injections when adjusted with the shift in time. Furthermore, the maximum number of escaped particles occurs at 0.045 s after the injection for all particle diameters. The presented results show that some particle reduction previously ascribed to plasma treatment has ignored contributions from the surface deposition.

Deterioration of reflecting coatings by intermetallic diffusion.

PubMed

Hunter, W R; Mikes, T L; Hass, G

1972-07-01

Gold diffraction gratings overcoated with Al + MgF(2) to increase their efficiency in the vacuum ultraviolet suffered a severe loss in efficiency within six months to a year after coating; for example, from 50% to 2% at lambda1216 A. The cause of this loss was assumed to be interdiffusion of Au and Al; therefore, a more complete study of Au-Al film combinations was performed. The coatings were aged at room and elevated temperatures. Reflectance measurements were made in the visible and vacuum ultraviolet spectral regions. For wavelengths longer than lambda900 A, the measurements show very little change until the diffusion boundary reaches the penetration depth of the radiation. If Al is the first surface layer, however, reflectance measurements at lambda584 A permit measuring the progress of the diffusion boundary toward the Al surface because of the low absorptance of Al at this wavelength. Interdiffusion can be effectively eliminated by the use of thin dielectric layers uch as SiO and the natural oxide of Al. Such protected coatings have been exposed for one week at a temperature of 170 degrees C with no visible sign of diffusion, whereas a similar coating without the barrier layer would become useless in less than 1 h. Some preliminary studies have been made with Pt-Al film combinations.

Critical analysis of partial discharge dynamics in air filled spherical voids

NASA Astrophysics Data System (ADS)

Callender, G.; Golosnoy, I. O.; Rapisarda, P.; Lewin, P. L.

2018-03-01

In this paper partial discharge (PD) is investigated inside a spherical air filled void at atmospheric pressure using a drift diffusion model. Discharge dynamics consisted of an electron avalanche transitioning into positive streamer, in agreement with earlier work on dielectric barrier discharges. Different model configurations were utilised to test many of the concepts employed in semi-analytical PD activity models, which use simplistic descriptions of the discharge dynamics. The results showed that many of these concepts may be erroneous, with significant discrepancies between the canonical reasoning and the simulation results. For example, the residual electric field, the electric field after a discharge, is significantly lower than the estimates used by classical PD activity models in the literature.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lin, Chien-Chih; Hsu, Pei-Lun; Lin, Li

A particular edge-dependent inversion current behavior of metal-oxide-semiconductor (MOS) tunneling diodes was investigated utilizing square and comb-shaped electrodes. The inversion tunneling current exhibits the strong dependence on the tooth size of comb-shaped electrodes and oxide thickness. Detailed illustrations of current conduction mechanism are developed by simulation and experimental measurement results. It is found that the electron diffusion current and Schottky barrier height lowering for hole tunneling current both contribute on inversion current conduction. In MOS tunneling photodiode applications, the photoresponse can be improved by decreasing SiO{sub 2} thickness and using comb-shaped electrodes with smaller tooth spacing. Meantime, the high andmore » steady photosensitivity can also be approached by introducing HfO{sub 2} into dielectric stacks.« less

Low-frequency dielectric spectroscopy as a tool for studying the compatibility between pharmaceutical gels and mucous tissue.

PubMed

Hägerström, Helene; Edsman, Katarina; Strømme, Maria

2003-09-01

This interdisciplinary work demonstrates how low-frequency dielectric spectroscopy, a technique that is frequently used within physics, can be used to assess the possibilities of intimate surface contact between a polymer gel and mucous tissue, which is generally considered to be the first step in the mucoadhesion process. The dielectric responses of five different gels, of freshly excised porcine nasal mucosa and of systems made by combining the two were measured. All spectra were modeled by a Randles electric circuit containing a diffusion element, a barrier resistance in parallel with a capacitance, and a high-frequency resistance. The results were used to create a measure of the compatibility between the gel and the mucus, which we have named the compatibility factor. Thus, the compatibility factor provides us with a measure of the ease with which a charged species passes the interface between a gel and the mucus layer. The compatibility factor is calculated from the high frequency (kHz region) response of the gel, of the mucosa, and of the combined system. The two highest compatibility factors in this study were obtained for gels based on crosslinked poly(acrylic acid) and chitosan, which was in agreement with the results from mucoadhesion measurements that were performed using a tensile strength method. Copyright 2003 Wiley-Liss, Inc. and the American Pharmacists Association

Multi-layer light-weight protective coating and method for application

NASA Technical Reports Server (NTRS)

Wiedemann, Karl E. (Inventor); Clark, Ronald K. (Inventor); Taylor, Patrick J. (Inventor)

1992-01-01

A thin, light-weight, multi-layer coating is provided for protecting metals and their alloys from environmental attack at high temperatures. A reaction barrier is applied to the metal substrate and a diffusion barrier is then applied to the reaction barrier. A sealant layer may also be applied to the diffusion barrier if desired. The reaction barrier is either non-reactive or passivating with respect to the metal substrate and the diffusion barrier. The diffusion barrier is either non-reactive or passivating with respect to the reaction barrier and the sealant layer. The sealant layer is immiscible with the diffusion barrier and has a softening point below the expected use temperature of the metal.

Modeling and simulation of Cu diffusion and drift in porous CMOS backend dielectrics

NASA Astrophysics Data System (ADS)

Ali, R.; Fan, Y.; King, S.; Orlowski, M.

2018-06-01

With the advent of porous dielectrics, Cu drift-diffusion reliability issues in CMOS backend have only been exacerbated. In this regard, a modeling and simulation study of Cu atom/ion drift-diffusion in porous dielectrics is presented to assess the backend reliability and to explore conditions for a reliable Resistive Random Access Memory (RRAM) operation. The numerical computation, using elementary jump frequencies for a random walk in 2D and 3D, is based on an extended adjacency tensor concept. It is shown that Cu diffusion and drift transport are affected as much by the level of porosity as by the pore morphology. Allowance is made for different rates of Cu dissolution into the dielectric and for Cu absorption and transport at and on the inner walls of the pores. Most of the complex phenomena of the drift-diffusion transport in porous media can be understood in terms of local lateral and vertical gradients and the degree of their perturbation caused by the presence of pores in the transport domain. The impact of pore morphology, related to the concept of tortuosity, is discussed in terms of "channeling" and "trapping" effects. The simulations are calibrated to experimental results of porous SiCOH layers of 25 nm thickness, sandwiched between Cu and Pt(W) electrodes with experimental porosity levels of 0%, 8%, 12%, and 25%. We find that porous SICOH is more immune to Cu+ drift at 300 K than non-porous SICOH.

Effect of an Interfacial Layer on Electron Tunneling through Atomically Thin Al2O3 Tunnel Barriers.

PubMed

Wilt, Jamie; Sakidja, Ridwan; Goul, Ryan; Wu, Judy Z

2017-10-25

Electron tunneling through high-quality, atomically thin dielectric films can provide a critical enabling technology for future microelectronics, bringing enhanced quantum coherent transport, fast speed, small size, and high energy efficiency. A fundamental challenge is in controlling the interface between the dielectric and device electrodes. An interfacial layer (IL) will contain defects and introduce defects in the dielectric film grown atop, preventing electron tunneling through the formation of shorts. In this work, we present the first systematic investigation of the IL in Al 2 O 3 dielectric films of 1-6 Å's in thickness on an Al electrode. We integrated several advanced approaches: molecular dynamics to simulate IL formation, in situ high vacuum sputtering atomic layer deposition (ALD) to synthesize Al 2 O 3 on Al films, and in situ ultrahigh vacuum scanning tunneling spectroscopy to probe the electron tunneling through the Al 2 O 3 . The IL had a profound effect on electron tunneling. We observed a reduced tunnel barrier height and soft-type dielectric breakdown which indicate that defects are present in both the IL and in the Al 2 O 3 . The IL forms primarily due to exposure of the Al to trace O 2 and/or H 2 O during the pre-ALD heating step of fabrication. As the IL was systematically reduced, by controlling the pre-ALD sample heating, we observed an increase of the ALD Al 2 O 3 barrier height from 0.9 to 1.5 eV along with a transition from soft to hard dielectric breakdown. This work represents a key step toward the realization of high-quality, atomically thin dielectrics with electron tunneling for the next generation of microelectronics.

Scanning Probe Microscopy on heterogeneous CaCu3Ti4O12 thin films

PubMed Central

2011-01-01

The conductive atomic force microscopy provided a local characterization of the dielectric heterogeneities in CaCu3Ti4O12 (CCTO) thin films deposited by MOCVD on IrO2 bottom electrode. In particular, both techniques have been employed to clarify the role of the inter- and sub-granular features in terms of conductive and insulating regions. The microstructure and the dielectric properties of CCTO thin films have been studied and the evidence of internal barriers in CCTO thin films has been provided. The role of internal barriers and the possible explanation for the extrinsic origin of the giant dielectric response in CCTO has been evaluated. PMID:21711646

Scanning Probe Microscopy on heterogeneous CaCu3Ti4O12 thin films

NASA Astrophysics Data System (ADS)

Fiorenza, Patrick; Lo Nigro, Raffaella; Raineri, Vito

2011-12-01

The conductive atomic force microscopy provided a local characterization of the dielectric heterogeneities in CaCu3Ti4O12 (CCTO) thin films deposited by MOCVD on IrO2 bottom electrode. In particular, both techniques have been employed to clarify the role of the inter- and sub-granular features in terms of conductive and insulating regions. The microstructure and the dielectric properties of CCTO thin films have been studied and the evidence of internal barriers in CCTO thin films has been provided. The role of internal barriers and the possible explanation for the extrinsic origin of the giant dielectric response in CCTO has been evaluated.

Scanning Probe Microscopy on heterogeneous CaCu3Ti4O12 thin films.

PubMed

Fiorenza, Patrick; Lo Nigro, Raffaella; Raineri, Vito

2011-02-04

The conductive atomic force microscopy provided a local characterization of the dielectric heterogeneities in CaCu3Ti4O12 (CCTO) thin films deposited by MOCVD on IrO2 bottom electrode. In particular, both techniques have been employed to clarify the role of the inter- and sub-granular features in terms of conductive and insulating regions. The microstructure and the dielectric properties of CCTO thin films have been studied and the evidence of internal barriers in CCTO thin films has been provided. The role of internal barriers and the possible explanation for the extrinsic origin of the giant dielectric response in CCTO has been evaluated.

Resonant tunneling of surface plasmon polariton in the plasmonic nano-cavity.

PubMed

Park, Junghyun; Kim, Hwi; Lee, Il-Min; Kim, Seyoon; Jung, Jaehoon; Lee, Byoungho

2008-10-13

We investigate the reflection and transmission characteristics of the low-dielectric constant cut off barrier in the metal-insulator-metal (MIM) waveguide and propose a novel plasmonic nano-cavity made of two cut off barriers and the waveguide between them. It is shown that the anti-symmetric mode in the MIM waveguide with the core of the low dielectric constant below the specific value cannot be supported and this region can be regarded as a cut off barrier with high stability. The phase shift due to the reflection at the finite-length cut off barrier is calculated and the design scheme of the cavity length for the resonant tunneling is presented. The transmission spectra through the proposed nano-cavity are also discussed.

Preliminary Development of a Computational Model of a Dielectric Barrier Discharge

DTIC Science & Technology

2004-12-01

Gerhard Pietsch . "Microdischarges in Air-Fed Ozonizers," Journal of Physics D: Applied Physics, Vol 24, 1991, pp 564-572. 14 Baldur Eliasson. "Modeling...Gibalov and Gerhard Pietsch . "Two-dimensional Modeling of the Dielectric Barrier Discharge in Air," Plasma Sources Science Technology, 1 (1992), pp. 166...Computer Modeling," IEEE Transactions on Plasma Science, 27 (1), February 1999, pp 36-37. 19 Valentin I Gibalov and Gerhard J. Pietsch . "The

Structural, electrical and magnetic characteristics of improper multiferroic: GdFeO3

NASA Astrophysics Data System (ADS)

Sahoo, Sushrisangita; Mahapatra, P. K.; Choudhary, R. N. P.; Nandagoswami, M. L.; Kumar, Ashok

2016-06-01

Studies of dielectric, impedance, conductivity, magnetic and magneto-electric (ME) properties of GdFeO3 ceramics fabricated by chemical method are reported here. The synthesized powder is phase-pure and crystallizes in the orthorhombic crystal structure. Below 50 °C, the impedance has only grain contribution, while at higher temperatures, it has both grain and grain boundary contributions. Based on the depression angle of the Nyquist plot, the inhomogeneity of the sample is estimated. The capacitance data reveal that at low temperatures, the sample behaves as a leaky capacitor while at higher temperatures the sample shows the effect of the diffusion of thermally excited charge carriers across a barrier. In the low-frequency domain, the dielectric characteristics were explained on the basis of the Maxwell-Wagner mechanism, while in the high-frequency range those were correlated to the grain effect. The frequency dependent characteristic of the tangent loss is explained as a combined contribution from the Debye-like relaxation and dc conductivity related mechanism at higher temperatures. The temperature dependence of the dielectric characteristic and data are found to fit with two Gaussian peaks centered at 148 °C and 169 °C. While the first peak is explained on the basis of the Maxwell-Wagner mechanism, the second has its origin in magnetic reordering and the shifting of Gd3+ ions along the c-axis. The magnetic reordering also results in a sharp decrease of conductivity between 169 °C and 243 °C. The frequency dependent ac conductivity is explained on the basis of the correlated barrier hopping model and the quantum mechanical hopping model for the different frequency domain. The existence of P-E and M-H loops support its improper ferroelectric behavior and canted anti-ferromagnetism respectively. The ME coefficient of the sample is found to be 1.78 mV cm-1 Oe-1.

Nature of Dielectric Properties, Electric Modulus and AC Electrical Conductivity of Nanocrystalline ZnIn2Se4 Thin Films

NASA Astrophysics Data System (ADS)

El-Nahass, M. M.; Attia, A. A.; Ali, H. A. M.; Salem, G. F.; Ismail, M. I.

2018-02-01

The structural characteristics of thermally deposited ZnIn2Se4 thin films were indexed utilizing x-ray diffraction as well as scanning electron microscopy techniques. Dielectric properties, electric modulus and AC electrical conductivity of ZnIn2Se4 thin films were examined in the frequency range from 42 Hz to 106 Hz. The capacitance, conductance and impedance were measured at different temperatures. The dielectric constant and dielectric loss decrease with an increase in frequency. The maximum barrier height was determined from the analysis of the dielectric loss depending on the Giuntini model. The real part of the electric modulus revealed a constant maximum value at higher frequencies and the imaginary part of the electric modulus was characterized by the appearance of dielectric relaxation peaks. The AC electrical conductivity obeyed the Jonscher universal power law. Correlated barrier hopping model was the appropriate mechanism for AC conduction in ZnIn2Se4 thin films. Estimation of the density of states at the Fermi level and activation energy, for AC conduction, was carried out based on the temperature dependence of AC electrical conductivity.

Reactive diffusion in the presence of a diffusion barrier: Experiment and model

NASA Astrophysics Data System (ADS)

Mangelinck, D.; Luo, T.; Girardeaux, C.

2018-05-01

Reactions in thin films and diffusion barriers are important for applications such as protective coatings, electrical contact, and interconnections. In this work, the effect of a barrier on the kinetics of the formation for a single phase by reactive diffusion is investigated from both experimental and modeling point of views. Two types of diffusion barriers are studied: (i) a thin layer of W deposited between a Ni film and Si substrate and (ii) Ni alloy films, Ni(1%W) and Ni(5%Pt), that form a diffusion barrier during the reaction with the Si substrate. The effect of the barriers on the kinetics of δ-Ni2Si formation is determined by in situ X ray diffraction and compared to models that explain the kinetic slowdown induced by both types of barrier. A linear parabolic growth is found for the deposited barrier with an increasing linear contribution for increasing barrier thickness. On the contrary, the growth is mainly parabolic for the barrier formed by the reaction between an alloy film and the substrate. The permeability of the two types of barrier is determined and discussed. The developed models fit well with the dedicated model experiments, leading to a better understanding of the barrier effect on the reactive diffusion and allowing us to predict the barrier behaviour in various applications.

Phase-coherent elastic scattering of electromagnetic waves from a random array of resonant dielectric ridges on a dielectric substrate: Weak roughness limit

NASA Astrophysics Data System (ADS)

Danila, B.; McGurn, A. R.

2005-03-01

A theoretical discussion is given of the diffuse scattering of p -polarized electromagnetic waves from a vacuum-dielectric interface characterized by a one-dimensional disorder in the form of parallel, Gaussian shaped, dielectric ridges positioned at random on a planar semi-infinite dielectric substrate. The parameters of the surface roughness are chosen so that the surface is characterized as weakly rough with a low ridge concentration. The emphasis is on phase coherent features in the speckle pattern of light scattered from the surface. These features are determined from the intensity-intensity correlation function of the speckle pattern and are studied as functions of the frequency of light for frequencies near the dielectric frequency resonances of the ridge material. In the first part of the study, the ridges on the substrate are taken to be identical, made from either GaAs, NaF, or ZnS. The substrate for all cases is CdS. In a second set of studies, the heights and widths of the ridges are statistically distributed. The effects of these different types of randomness on the scattering from the random array of dielectric ridges is determined near the dielectric resonance frequency of the ridge material. The work presented is an extension of studies [A. B. McGurn and R. M. Fitzgerald, Phys. Rev. B 65, 155414 (2002)] that originally treated only the differential reflection coefficient of the diffuse scattering of light (not speckle correlation functions) from a system of identical ridges. The object of the present work is to demonstrate the effects of the dielectric frequency resonances of the ridge materials on the phase coherent features found in the speckle patterns of the diffusely scattered light. The dielectric frequency resonances are shown to enhance the observation of the weak localization of electromagnetic surface waves at the random interface. The frequencies treated in this work are in the infrared. Previous weak localization studies have concentrated mainly on the visible and ultraviolet.

Numerical Methods for Analysis of Charged Vacancy Diffusion in Dielectric Solids

DTIC Science & Technology

2006-12-01

theory for charged vacancy diffusion in elastic dielectric materials is formulated and implemented numerically in a finite difference code. The...one of the co-authors on neutral vacancy kinetics (Grinfeld and Hazzledine, 1997). The theory is implemented numerically in a finite difference code...accuracy of order ( )2x∆ , using a finite difference approximation (Hoffman, 1992) for the second spatial derivative of φ : ( )21 1 0ˆ2 /i i i i Rxφ

Colossal internal barrier layer capacitance effect in polycrystalline copper (II) oxide

NASA Astrophysics Data System (ADS)

Sarkar, Sudipta; Jana, Pradip Kumar; Chaudhuri, B. K.

2008-01-01

Dielectric spectroscopy analysis of the high permittivity (κ˜104) copper (II) oxide (CuO) ceramic shows that the grain contribution plays a major role for the giant-κ value at low temperature, whereas grain boundary (GB) contribution dominates around room temperature and above. Moreover, impedance spectroscopy analysis reveals electrically heterogeneous microstructure in CuO consisting of semiconducting grains and insulating GBs. Finally, the giant dielectric phenomenon exhibited by CuO is attributed to the internal barrier layer (due to GB) capacitance mechanism.

Studies of the Electrohydrodynamic Force Produced in a Dielectric Barrier Discharge for Flow Control. Report no. 2, Phase 3

DTIC Science & Technology

2010-02-01

applied between the electrodes at a repetition rate of a few kHz (for spanwise as well as streamwise configurations of the DBD actuators with respect to...the electronic version) 1. Introduction Surface dielectric barrier discharges ( DBDs ) at atmospheric pressure can generate a flow or modify the...to the momentum transfer from charged particles to neutral molecules in a gas discharge. In recent papers [7–9], we presented studies of surface DBDs

Investigation of Ozone Yield of Air Fed Ozonizer by High Pressure Homogeneous Dielectric Barrier Discharge

DTIC Science & Technology

2013-07-01

31st ICPIG, July 14-19, 2013, Granada , Spain Investigation of ozone yield of air fed ozonizer by high pressure homogeneous dielectric barrier...Phenomena in Ionized Gases (31st) (ICPIG) Held in Granada , Spain on 14-19 July 2013 14. ABSTRACT We succeed in generating an atmospheric and high...8-98) Prescribed by ANSI Std Z39-18 31st ICPIG, July 14-19, 2013, Granada , Spain size and thickness are 100 cm2 and 2 mm respectively. The

Study of the homogeneity of the current distribution in a dielectric barrier discharge in air by means of a segmented electrode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Malashin, M. V., E-mail: m-malashin@mail.ru; Moshkunov, S. I.; Khomich, V. Yu.

2016-02-15

The current distribution in a dielectric barrier discharge in atmospheric-pressure air at a natural humidity of 40–60% was studied experimentally with a time resolution of 200 ps. The experimental results are interpreted by means of numerically simulating the discharge electric circuit. The obtained results indicate that the discharge operating in the volumetric mode develops simultaneously over the entire transverse cross section of the discharge gap.

Coupling between overall rotational diffusion and domain motions in proteins and its effect on dielectric spectra.

PubMed

Ryabov, Yaroslav

2015-09-01

In this work, we formulate a closed-form solution of the model of a semirigid molecule for the case of fluctuating and reorienting molecular electric dipole moment. We illustrate with numeric calculations the impact of protein domain motions on dielectric spectra using the example of the 128 kDa protein dimer of Enzyme I. We demonstrate that the most drastic effect occurs for situations when the characteristic time of protein domain dynamics is comparable to the time of overall molecular rotational diffusion. We suggest that protein domain motions could be a possible explanation for the high-frequency contribution that accompanies the major relaxation dispersion peak in the dielectric spectra of protein aqueous solutions. We propose that the presented computational methodology could be used for the simultaneous analysis of dielectric spectroscopy and nuclear magnetic resonance data. Proteins 2015; 83:1571-1581. © 2015 Wiley Periodicals, Inc. © 2015 Wiley Periodicals, Inc.

Effects of Complex Structured Anodic Oxide Dielectric Layer Grown in Pore Matrix for Aluminum Capacitor.

PubMed

Shin, Jin-Ha; Yun, Sook Young; Lee, Chang Hyoung; Park, Hwa-Sun; Suh, Su-Jeong

2015-11-01

Anodization of aluminum is generally divided up into two types of anodic aluminum oxide structures depending on electrolyte type. In this study, an anodization process was carried out in two steps to obtain high dielectric strength and break down voltage. In the first step, evaporated high purity Al on Si wafer was anodized in oxalic acidic aqueous solution at various times at a constant temperature of 5 degrees C. In the second step, citric acidic aqueous solution was used to obtain a thickly grown sub-barrier layer. During the second anodization process, the anodizing potential of various ranges was applied at room temperature. An increased thickness of the sub-barrier layer in the porous matrix was obtained according to the increment of the applied anodizing potential. The microstructures and the growth of the sub-barrier layer were then observed with an increasing anodizing potential of 40 to 300 V by using a scanning electron microscope (SEM). An impedance analyzer was used to observe the change of electrical properties, including the capacitance, dissipation factor, impedance, and equivalent series resistance (ESR) depending on the thickness increase of the sub-barrier layer. In addition, the breakdown voltage was measured. The results revealed that dielectric strength was improved with the increase of sub-barrier layer thickness.

Describing Temperature-Dependent Self-Diffusion Coefficients and Fluidity of 1- and 3-Alcohols with the Compensated Arrhenius Formalism.

PubMed

Fleshman, Allison M; Forsythe, Grant E; Petrowsky, Matt; Frech, Roger

2016-09-22

The location of the hydroxyl group in monohydroxy alcohols greatly affects the temperature dependence of the liquid structure due to hydrogen bonding. Temperature-dependent self-diffusion coefficients, fluidity (the inverse of viscosity), dielectric constant, and density have been measured for several 1-alcohols and 3-alcohols with varying alkyl chain lengths. The data are modeled using the compensated Arrhenius formalism (CAF). The CAF follows a modified transition state theory using an Arrhenius-like expression to describe the transport property, which consists of a Boltzmann factor containing an energy of activation, Ea, and an exponential prefactor containing the temperature-dependent solution dielectric constant, εs(T). Both 1- and 3-alcohols show the Ea of diffusion coefficients (approximately 43 kJ mol(-1)) is higher than the Ea of fluidity (approximately 35 kJ mol(-1)). The temperature dependence of the exponential prefactor in these associated liquids is explained using the dielectric constant and the Kirkwood-Frölich correlation factor, gk. It is argued that the dielectric constant must be used to account for the additional temperature dependence due to variations in the liquid structure (e.g., hydrogen bonding) for the CAF to accurately model the transport property.

Diffusion barriers

NASA Technical Reports Server (NTRS)

Nicolet, M. A.

1983-01-01

The choice of the metallic film for the contact to a semiconductor device is discussed. One way to try to stabilize a contact is by interposing a thin film of a material that has low diffusivity for the atoms in question. This thin film application is known as a diffusion barrier. Three types of barriers can be distinguished. The stuffed barrier derives its low atomic diffusivity to impurities that concentrate along the extended defects of a polycrystalline layer. Sacrificial barriers exploit the fact that some (elemental) thin films react in a laterally uniform and reproducible fashion. Sacrificial barriers have the advantage that the point of their failure is predictable. Passive barriers are those most closely approximating an ideal barrier. The most-studied case is that of sputtered TiN films. Stuffed barriers may be viewed as passive barriers whose low diffusivity material extends along the defects of the polycrystalline host.

Dielectric Barrier Discharge based Mercury-free plasma UV-lamp for efficient water disinfection.

PubMed

Prakash, Ram; Hossain, Afaque M; Pal, U N; Kumar, N; Khairnar, K; Mohan, M Krishna

2017-12-12

A structurally simple dielectric barrier discharge based mercury-free plasma UV-light source has been developed for efficient water disinfection. The source comprises of a dielectric barrier discharge arrangement between two co-axial quartz tubes with an optimized gas gap. The outer electrode is an aluminium baked foil tape arranged in a helical form with optimized pitch, while the inner electrode is a hollow aluminium metallic rod, hermetically sealed. Strong bands peaking at wavelengths 172 nm and 253 nm, along with a weak band peaking at wavelength 265 nm have been simultaneously observed due to plasma radiation from the admixture of xenon and iodine gases. The developed UV source has been used for bacterial deactivation studies using an experimental setup that is an equivalent of the conventional house-hold water purifier system. Deactivation studies for five types of bacteria, i.e., E. coli, Shigella boydii, Vibrio, Coliforms and Fecal coliform have been demonstrated with 4 log reductions in less than ten seconds.

Deactivation of Streptococcus mutans Biofilms on a Tooth Surface Using He Dielectric Barrier Discharge at Atmospheric Pressure

NASA Astrophysics Data System (ADS)

Imola, Molnar; Judit, Papp; Alpar, Simon; Sorin, Dan Anghel

2013-06-01

This paper presents a study of the effect of the low temperature atmospheric helium dielectric barrier discharge (DBD) on the Streptococcus mutans biofilms formed on tooth surface. Pig jaws were also treated by plasma to detect if there is any harmful effect on the gingiva. The plasma was characterized by using optical emission spectroscopy. Experimental data indicated that the discharge is very effective in deactivating Streptococcus mutans biofilms. It can destroy them with an average decimal reduction time (D-time) of 19 s and about 98% of them were killed after a treatment time of 30 s. According to the survival curve kinetic an overall 32 s treatment time would be necessary to perform a complete sterilization. The experimental results presented in this study indicated that the helium dielectric barrier discharge, in plan-parallel electrode configuration, could be a very effective tool for deactivation of oral bacteria and might be a promising technique in various dental clinical applications.

Metastable Ar(1 s5) density dependence on pressure and argon-helium mixture in a high pressure radio frequency dielectric barrier discharge

NASA Astrophysics Data System (ADS)

Emmons, D. J.; Weeks, D. E.; Eshel, B.; Perram, G. P.

2018-01-01

Simulations of an α-mode radio frequency dielectric barrier discharge are performed for varying mixtures of argon and helium at pressures ranging from 200 to 500 Torr using both zero and one-dimensional models. Metastable densities are analyzed as a function of argon-helium mixture and pressure to determine the optimal conditions, maximizing metastable density for use in an optically pumped rare gas laser. Argon fractions corresponding to the peak metastable densities are found to be pressure dependent, shifting from approximately 15% Ar in He at 200 Torr to 10% at 500 Torr. A decrease in metastable density is observed as pressure is increased due to a diminution in the reduced electric field and a quadratic increase in metastable loss rates through A r2* formation. A zero-dimensional effective direct current model of the dielectric barrier discharge is implemented, showing agreement with the trends predicted by the one-dimensional fluid model in the bulk plasma.

Laser process and corresponding structures for fabrication of solar cells with shunt prevention dielectric

DOE Office of Scientific and Technical Information (OSTI.GOV)

Harley, Gabriel; Smith, David D.; Dennis, Tim

Contact holes of solar cells are formed by laser ablation to accommodate various solar cell designs. Use of a laser to form the contact holes is facilitated by replacing films formed on the diffusion regions with a film that has substantially uniform thickness. Contact holes may be formed to deep diffusion regions to increase the laser ablation process margins. The laser configuration may be tailored to form contact holes through dielectric films of varying thicknesses.

Liposomal membrane disruption by means of miniaturized dielectric-barrier discharge in air: liposome characterization

NASA Astrophysics Data System (ADS)

Svarnas, P.; Asimakoulas, L.; Katsafadou, M.; Pachis, K.; Kostazos, N.; Antimisiaris, S. G.

2017-08-01

The increasing interest of the plasma community in the application of atmospheric-pressure cold plasmas to bio-specimen treatment has led to the creation of the emerging field of plasma biomedicine. Accordingly, plasma setups based on dielectric-barrier discharges have already been widely tested for the inactivation of various cells. Most of these systems refer to the plasma jet concept where noble gases penetrate atmospheric air and are subjected to the influence of high electric fields, thus forming guided streamers. Following the original works of our group where liposomal membranes were proposed as models for studying the interaction between plasma jets and cells, we present herein a study on liposomal membrane disruption by means of miniaturized dielectric-barrier discharge running in atmospheric air. Liposomal membranes of various lipid compositions, lamellarities, and sizes are treated at different times. It is shown that the dielectric-barrier discharge of low mean power leads to efficient liposomal membrane disruption. The latter is achieved in a controllable manner and depends on liposome properties. Additionally, it is clearly demonstrated that liposomal membrane disruption takes place even after plasma extinction, i.e. during post-treatment, resembling thus an ‘apoptosis’ effect, which is well known today mainly for cell membranes. Thus, the adoption of the present concept would be beneficial for tailoring studies on plasma-treated cell-mimics. Finally, the liposome treatment is discussed with respect to possible physicochemical mechanisms and potential discharge modification due to the various compositions of the liquid electrode.

Sub-nanosecond resolution electric field measurements during ns pulse breakdown in ambient air

NASA Astrophysics Data System (ADS)

Simeni Simeni, Marien; Goldberg, Ben; Gulko, Ilya; Frederickson, Kraig; Adamovich, Igor V.

2018-01-01

Electric field during ns pulse discharge breakdown in ambient air has been measured by ps four-wave mixing, with temporal resolution of 0.2 ns. The measurements have been performed in a diffuse plasma generated in a dielectric barrier discharge, in plane-to-plane geometry. Absolute calibration of the electric field in the plasma is provided by the Laplacian field measured before breakdown. Sub-nanosecond time resolution is obtained by using a 150 ps duration laser pulse, as well as by monitoring the timing of individual laser shots relative to the voltage pulse, and post-processing four-wave mixing signal waveforms saved for each laser shot, placing them in the appropriate ‘time bins’. The experimental data are compared with the analytic solution for time-resolved electric field in the plasma during pulse breakdown, showing good agreement on ns time scale. Qualitative interpretation of the data illustrates the effects of charge separation, charge accumulation/neutralization on the dielectric surfaces, electron attachment, and secondary breakdown. Comparison of the present data with more advanced kinetic modeling is expected to provide additional quantitative insight into air plasma kinetics on ~ 0.1-100 ns scales.

A Rayleighian approach for modeling kinetics of ionic transport in polymeric media

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kumar, Rajeev

2017-02-14

Here, we report a theoretical approach for analyzing impedance of ionic liquids (ILs) and charged polymers such as polymerized ionic liquids (PolyILs) within linear response. The approach is based on the Rayleigh dissipation function formalism, which provides a computational framework for a systematic study of various factors, including polymer dynamics, in affecting the impedance. We present an analytical expression for the impedance within linear response by constructing a one-dimensional model for ionic transport in ILs/PolyILs. This expression is used to extract mutual diffusion constants, the length scale of mutual diffusion, and thicknesses of a low-dielectric layer on the electrodes frommore » the broadband dielectric spectroscopy (BDS) measurements done for an IL and three PolyILs. Also, static dielectric permittivities of the IL and the PolyILs are determined. The extracted mutual diffusion constants are compared with the self diffusion constants of ions measured using pulse field gradient (PFG) fluorine nuclear magnetic resonance (NMR). For the first time, excellent agreements between the diffusivities extracted from the Electrode Polarization spectra (EPS) of IL/PolyILs and those measured using the PFG-NMR are found, which allows the use of the EPS and the PFG-NMR techniques in a complimentary manner for a general understanding of the ionic transport.« less

Electrical and Dielectric Properties of a n-Si Schottky Barrier Diode with Bismuth Titanate Interlayer: Effect of Temperature

NASA Astrophysics Data System (ADS)

Yıldırım, M.; Şahin, C.; Altındal, Ş.; Durmuş, P.

2017-03-01

An Au/Bi4Ti3O12/ n-Si Schottky barrier diode (SBD) was fabricated with a 51 nm Bi4Ti3O12 interfacial layer. Admittance measurements of the fabricated SBD were carried out in the bias voltage ( V) range of -4 V and 6 V. Capacitance ( C) and conductance ( G/ω) measurements were carried out in a wide temperature range of 120-380 K so that temperature effects on electrical and dielectric properties of the SBD were investigated. Main electrical parameters were extracted from reverse bias C -2- V plots. It was found that variance of electrical and dielectric parameters of the SBD with temperature is basically different for low and high temperature regions. A fair number (˜1012 eV-1 cm-2) was obtained for surface states ( N ss); however, N ss first decreased then increased with temperature. This result was associated with increased defects with temperature and higher activation energy in the high temperature region. Dielectric parameters of the SBD were also extracted and the dielectric constant of SBD was found as ˜10 at room temperature. Application of modulus formalism to the admittance data revealed temperature-activated dielectric relaxation at 340 K. Results showed that the temperature has considerable effects on electrical and dielectric properties of Au/Bi4Ti3O12/ n-Si SBD.

Diffusion chamber system for testing of collagen-based cell migration barriers for separation of ligament enthesis zones in tissue-engineered ACL constructs.

PubMed

Hahner, J; Hoyer, M; Hillig, S; Schulze-Tanzil, G; Meyer, M; Schröpfer, M; Lohan, A; Garbe, L-A; Heinrich, G; Breier, A

2015-01-01

A temporary barrier separating scaffold zones seeded with different cell types prevents faster growing cells from overgrowing co-cultured cells within the same construct. This barrier should allow sufficient nutrient diffusion through the scaffold. The aim of this study was to test the effect of two variants of collagen-based barriers on macromolecule diffusion, viability, and the spreading efficiency of primary ligament cells on embroidered scaffolds. Two collagen barriers, a thread consisting of a twisted film tape and a sponge, were integrated into embroidered poly(lactic-co-caprolactone) and polypropylene scaffolds, which had the dimension of lapine anterior cruciate ligaments (ACL). A diffusion chamber system was designed and established to monitor nutrient diffusion using fluorescein isothiocyanate-labeled dextran of different molecular weights (20, 40, 150, 500 kDa). Vitality of primary lapine ACL cells was tested at days 7 and 14 after seeding using fluorescein diacetate and ethidium bromide staining. Cell spreading on the scaffold surface was measured using histomorphometry. Nuclei staining of the cross-sectioned scaffolds revealed the penetration of ligament cells through both barrier types. The diffusion chamber was suitable to characterize the diffusivity of dextran molecules through embroidered scaffolds with or without integrated collagen barriers. The diffusion coefficients were generally significantly lower in scaffolds with barriers compared to those without barriers. No significant differences between diffusion coefficients of both barrier types were detected. Both barriers were cyto-compatible and prevented most of the ACL cells from crossing the barrier, whereby the collagen thread was easier to handle and allowed a higher rate of cell spreading.

Thermotropic phase transitions in Pb{sub 1−x}Sr{sub x}(Al{sub 1/3}Nb{sub 2/3}){sub 0.1}(Zr{sub 0.52}Ti{sub 0.48}){sub 0.9}O{sub 3} ceramics: Temperature dependent dielectric permittivity and Raman scattering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, C. Q.; Peng, L.; Jiang, K.

2015-06-15

The phase transitions of Pb{sub 1−x}Sr{sub x}(Al{sub 1/3}Nb{sub 2/3}){sub 0.1}(Zr{sub 0.52}Ti{sub 0.48}){sub 0.9}O{sub 3} (Sr-modified PAN-PZT) ceramics with Sr compositions of x = 2%, 5%, 10% and 15% have been investigated using X-ray diffraction (XRD), temperature dependent dielectric permittivity and Raman scattering. The XRD analysis show that the phase transition occurs between Sr composition of 5% and 10%. Based on the broad dielectric peaks at 100 Hz, the diffused phase transition from tetragonal (T) to cubic (C) structure shifts to lower temperature with increasing Sr composition. The dramatic changes of wavenumber and full width at half-maximum (FWHM) for E(TO{sub 4})′more » softing mode can be observed at morphotropic phase boundary (MPB). Moreover, the MPB characteristic shows a wider and lower trend of temperature region with increasing Sr composition. It could be ascribed to the diminishment of the energy barrier and increment of A-cation entropy. Therefore, the Sr-modified PAN-PZT ceramics unambiguously undergo two successive structural transitions (rhombohedral-tetragonal-cubic phase) with temperature from 80 to 750 K. Correspondingly, the phase diagram of Sr-modified PAN-PZT ceramics can be well depicted.« less

Electron current extraction from radio frequency excited micro-dielectric barrier discharges

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Jun-Chieh; Kushner, Mark J.; Leoni, Napoleon

Micro dielectric barrier discharges (mDBDs) consist of micro-plasma devices (10-100 {mu}m diameter) in which the electrodes are fully or partially covered by dielectrics, and often operate at atmospheric pressure driven with radio frequency (rf) waveforms. In certain applications, it may be desirable to extract electron current out of the mDBD plasma, which necessitates a third electrode. As a result, the physical structure of the m-DBD and the electron emitting properties of its materials are important to its operation. In this paper, results from a two-dimensional computer simulation of current extraction from mDBDs sustained in atmospheric pressure N{sub 2} will bemore » discussed. The mDBDs are sandwich structures with an opening of tens-of-microns excited with rf voltage waveforms of up to 25 MHz. Following avalanche by electron impact ionization in the mDBD cavity, the plasma can be expelled from the cavity towards the extraction electrode during the part of the rf cycle when the extraction electrode appears anodic. The electron current extraction can be enhanced by biasing this electrode. The charge collection can be controlled by choice of rf frequency, rf driving voltage, and permittivity of the dielectric barrier.« less

Investigation on the Micro-Discharge Characteristics of Dielectric Barrier Discharge in a Needle-Plate Geometry

NASA Astrophysics Data System (ADS)

Li, Xuechen; Niu, Dongying; Jia, Pengying; Zhao, Na; Yuan, Ning

2011-04-01

In this study, a dielectric barrier discharge device with needle-plate electrodes was used to investigate the characteristics of the micro-discharge in argon at one atmospheric pressure by an optical method. The results show that there are two discharge modes in the dielectric barrier discharge, namely corona mode and filamentary mode. The corona discharge only occurs in the vicinity of the needle tip when the applied voltage is very low. However, the filamentary discharge mode can occur, and micro-discharge bridges the two electrodes when the applied voltage reaches a certain value. The extended area of micro-discharge on the dielectric plate becomes larger with the increase in applied voltage or decrease in gas pressure. The variance of the light emission waveforms is studied as a function of the applied voltage. Results show that very narrow discharge pulse only appears at the negative half cycle of the applied voltage in the corona discharge mode. However, broad hump (about several microseconds) can be discerned at both the negative half cycle and the positive half cycle for a high voltage in the filamentary mode. Furthermore, the inception voltage decreases and the width of the discharge hump increases with the increase in applied voltage. These experimental phenomena can be explained qualitatively by analyzing the discharge mechanism.

Numerical investigation of the effect of driving voltage pulse shapes on the characteristics of low-pressure argon dielectric barrier discharge

DOE Office of Scientific and Technical Information (OSTI.GOV)

Eslami, E., E-mail: eeslami@iust.ac.ir; Barjasteh, A.; Morshedian, N.

2015-06-15

In this work, we numerically compare the effect of a sinusoidal, triangular, and rectangular pulsed voltage profile on the calculated particle production, electric current, and gas voltage in a dielectric barrier discharge. The total argon gas pressure of 400 Pa, the distance between dielectrics of 5 mm, the dielectric thickness of 0.7 mm, and the temperature of T = 300 K were considered as input parameters. The different driving voltage pulse shapes (triangular, rectangular, and sinusoidal) are considered as applied voltage with a frequency of 7 kHz and an amplitude of 700 V peak to peak. It is shown thatmore » applying a rectangular voltage, as compared with a sinusoidal or triangle voltage, increases the current peak, while the peak width is decreased. Higher current density is related to high production of charged particles, which leads to the generation of some highly active species, such as Ar* (4s level), and Ar** (4p level) in the gap.« less

Numerical analysis of the reverse blocking enhancement in High-K passivation AlGaN/GaN Schottky barrier diodes with gated edge termination

NASA Astrophysics Data System (ADS)

Bai, Zhiyuan; Du, Jiangfeng; Xin, Qi; Li, Ruonan; Yu, Qi

2018-02-01

We conducted a numerical analysis on high-K dielectric passivated AlGaN/GaN Schottky barrier diodes (HPG-SBDs) with a gated edge termination (GET). The reverse blocking characteristics were significantly enhanced without the stimulation of any parasitic effect by varying the dielectric thickness dge under the GET, thickness TP, and dielectric constant εr of the high-K passivation layer. The leakage current was reduced by increasing εr and decreasing dge. The breakdown voltage of the device was enhanced by increasing εr and TP. The highest breakdown voltage of 970 V and the lowest leakage current of 0.5 nA/mm were achieved under the conditions of εr = 80, TP = 800 nm, and dge = 10 nm. C-V simulation revealed that the HPG-SBDs induced no parasitic capacitance by comparing the integrated charges of the devices with different high-K dielectrics and different dge.

Recent patents on Cu/low-k dielectrics interconnects in integrated circuits.

PubMed

Jiang, Qing; Zhu, Yong F; Zhao, Ming

2007-01-01

In past decades, the development of microelectronics has moved along with constant speed of scaling to maximize transistor density as driven by the need for electrical and functional performance. For further development, the propagation velocity of electromagnetic waves becomes increasingly important due to their unyielding constraints on interconnect delay. To minimize it, it was forced to the introduction of the Cu/low-k dielectric interconnects to very large scale integrated circuits (VLSI) where k denotes the dielectric constant. In addition, reliable barrier structures, which are the thinnest part among the device parts to maximize space availability for the actual Cu IWs, are required to prevent penetration of different materials. In light of the above statements, this review will focus recent patents and some studies on Cu interconnects including Cu interconnect wires, low-k dielectrics and related barrier materials as well manufacturing techniques in VLSI, which are one of the most essential concerns in microelectronic industry and decides the further development of VLSI. In addition, possible future development in this field is considered.

Frequency-dependent transition from homogeneous to constricted shape in surface dielectric barrier discharge and its impact on biological target

NASA Astrophysics Data System (ADS)

Lazukin, A. V.; Serdukov, Y. A.; Pinchuk, M. E.; Stepanova, O. M.; Krivov, S. A.; Grabelnykh, O. I.

2018-01-01

The results of an experimental research of influence the surface dielectric discharge products excited by alternating sinusoidal voltage with RMS of 3.5 kV across the barrier of aluminum nitride with frequency of 50 Hz-100 kHz on a germination of soft winter wheat (Triticum aestivum L.) are presented. The stimulation effect on seedling morphological characteristics (sprout length and total length of roots) was observed but its reproducibility with combining the same processing conditions and subsequent germination is insignificant.

Theory of activated glassy relaxation, mobility gradients, surface diffusion, and vitrification in free standing thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mirigian, Stephen, E-mail: kschweiz@illinois.edu, E-mail: smirigian@gmail.com; Schweizer, Kenneth S., E-mail: kschweiz@illinois.edu, E-mail: smirigian@gmail.com

2015-12-28

We have constructed a quantitative, force level, statistical mechanical theory for how confinement in free standing thin films introduces a spatial mobility gradient of the alpha relaxation time as a function of temperature, film thickness, and location in the film. The crucial idea is that relaxation speeds up due to the reduction of both near-surface barriers associated with the loss of neighbors in the local cage and the spatial cutoff and dynamical softening near the vapor interface of the spatially longer range collective elasticity cost for large amplitude hopping. These two effects are fundamentally coupled. Quantitative predictions are made formore » how an apparent glass temperature depends on the film thickness and experimental probe technique, the emergence of a two-step decay and mobile layers in time domain measurements, signatures of confinement in frequency-domain dielectric loss experiments, the dependence of film-averaged relaxation times and dynamic fragility on temperature and film thickness, surface diffusion, and the relationship between kinetic experiments and pseudo-thermodynamic measurements such as ellipsometry.« less

Theory of activated glassy relaxation, mobility gradients, surface diffusion, and vitrification in free standing thin films.

PubMed

Mirigian, Stephen; Schweizer, Kenneth S

2015-12-28

We have constructed a quantitative, force level, statistical mechanical theory for how confinement in free standing thin films introduces a spatial mobility gradient of the alpha relaxation time as a function of temperature, film thickness, and location in the film. The crucial idea is that relaxation speeds up due to the reduction of both near-surface barriers associated with the loss of neighbors in the local cage and the spatial cutoff and dynamical softening near the vapor interface of the spatially longer range collective elasticity cost for large amplitude hopping. These two effects are fundamentally coupled. Quantitative predictions are made for how an apparent glass temperature depends on the film thickness and experimental probe technique, the emergence of a two-step decay and mobile layers in time domain measurements, signatures of confinement in frequency-domain dielectric loss experiments, the dependence of film-averaged relaxation times and dynamic fragility on temperature and film thickness, surface diffusion, and the relationship between kinetic experiments and pseudo-thermodynamic measurements such as ellipsometry.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Burin, M. J.; Simmons, G. G.; Ceja, H. G.

The filamentary discharge seen within commercial plasma globes is commonly enjoyed yet not well understood. Here, we investigate the discharge properties of a plasma globe using a variable high voltage amplifier. We find that increasing voltage magnitude increases the number of filaments while leaving their individual structure basically unchanged, a result typical of dielectric barrier discharges. The frequency of the voltage also affects filament population but more significantly changes filament structure, with more diffuse filaments seen at lower frequencies. Voltage polarity is observed to be important, especially at lower frequencies, where for negative-gradient voltages the discharge is more diffuse, notmore » filamentary. At late stages of the discharge circular structures appear and expand on the glass boundaries. We find no trend of discharge speed with respect to voltage variables, though this may be due to manufacturer sample-to-sample variation. Each voltage cycle the discharge expands outward at ∼10–15 km/s, a speed significantly higher than the estimated electron drift yet considerably lower than that observed for most streamers. We discuss the physics of these observations and their relation to similar discharges that can be found within nature and industry.« less

Enhancement of tunneling magnetoresistance by inserting a diffusion barrier in L10-FePd perpendicular magnetic tunnel junctions

NASA Astrophysics Data System (ADS)

Zhang, De-Lin; Schliep, Karl B.; Wu, Ryan J.; Quarterman, P.; Reifsnyder Hickey, Danielle; Lv, Yang; Chao, Xiaohui; Li, Hongshi; Chen, Jun-Yang; Zhao, Zhengyang; Jamali, Mahdi; Mkhoyan, K. Andre; Wang, Jian-Ping

2018-04-01

We studied the tunnel magnetoresistance (TMR) of L10-FePd perpendicular magnetic tunnel junctions (p-MTJs) with an FePd free layer and an inserted diffusion barrier. The diffusion barriers studied here (Ta and W) were shown to enhance the TMR ratio of the p-MTJs formed using high-temperature annealing, which are necessary for the formation of high quality L10-FePd films and MgO barriers. The L10-FePd p-MTJ stack was developed with an FePd free layer with a stack of FePd/X/Co20Fe60B20, where X is the diffusion barrier, and patterned into micron-sized MTJ pillars. The addition of the diffusion barrier was found to greatly enhance the magneto-transport behavior of the L10-FePd p-MTJ pillars such that those without a diffusion barrier exhibited negligible TMR ratios (<1.0%), whereas those with a Ta (W) diffusion barrier exhibited TMR ratios of 8.0% (7.0%) at room temperature and 35.0% (46.0%) at 10 K after post-annealing at 350 °C. These results indicate that diffusion barriers could play a crucial role in realizing high TMR ratios in bulk p-MTJs such as those based on FePd and Mn-based perpendicular magnetic anisotropy materials for spintronic applications.

Modelisation numerique d'un actionneur plasma de type decharge a barriere dielectrique par la methode de derive-diffusion

NASA Astrophysics Data System (ADS)

Xing, Jacques

Dielectric barrier discharge (DBD) plasma actuator is a proposed device for active for control in order to improve the performances of aircraft and turbomachines. Essentially, these actuators are made of two electrodes separated by a layer of dielectric material and convert electricity directly into flow. Because of the high costs associated with experiences in realistic operating conditions, there is a need to develop a robust numerical model that can predict the plasma body force and the effects of various parameters on it. Indeed, this plasma body force can be affected by atmospheric conditions (temperature, pressure, and humidity), velocity of the neutral flow, applied voltage (amplitude, frequency, and waveform), and by the actuator geometry. In that respect, the purpose of this thesis is to implement a plasma model for DBD actuator that has the potential to consider the effects of these various parameters. In DBD actuator modelling, two types of approach are commonly proposed, low-order modelling (or phenomenological) and high-order modelling (or scientific). However a critical analysis, presented in this thesis, showed that phenomenological models are not robust enough to predict the plasma body force without artificial calibration for each specific case. Moreover, there are based on erroneous assumptions. Hence, the selected approach to model the plasma body force is a scientific drift-diffusion model with four chemical species (electrons, positive ions, negative ions, and neutrals). This model was chosen because it gives consistent numerical results comparatively with experimental data. Moreover, this model has great potential to include the effect of temperature, pressure, and humidity on the plasma body force and requires only a reasonable computational time. This model was independently implemented in C++ programming language and validated with several test cases. This model was later used to simulate the effect of the plasma body force on the laminar-turbulent transition on airfoil in order to validate the performance of this model in practical CFD simulation. Numerical results show that this model gives a better prediction of the effect of the plasma on the fluid flow for a practical case in aerospace than a phenomenological model.

Dielectric model and theoretical analysis of cationic reverse micellar solutions in CTAB/isooctane/n-hexanol/water systems.

PubMed

Yang, Likun; Zhao, Kongshuang

2007-08-14

Dielectric relaxation spectra of CTAB reverse micellar solutions, CTAB/isooctane/n-hexanol/water systems with different concentrations of CTAB and different water contents, were investigated in the frequency range from 40 Hz to 110 MHz. Two striking dielectric relaxations were observed at about 10(4) Hz and 10(5) Hz, respectively. Dielectric parameters were obtained by fitting the data using the Cole-Cole equation with two Cole-Cole dispersion terms and the electrode polarization term. These parameters show different variation with the increase of the concentration of CTAB or the water content. In order to explain the two relaxations systematically and obtain detailed information on the systems and the inner surface of the reverse micelles, an electrical model has been constituted. On the basis of this model, the low-frequency dielectric relaxation was interpreted by the radial diffusion of free counterions in the diffuse layer with Grosse model. For the high-frequency dielectric relaxation, Hanai theory and the corresponding analysis method were used to calculate the phase parameters of the constituent phases in these systems. The reasonable analysis results suggest that the high-frequency relaxation probably originated from the interfacial polarization. The structural and electrical information of the present systems were obtained from the phase parameters simultaneously.

Microstructures and dielectric properties of CaCu3Ti4O12 ceramics via combustion method

NASA Astrophysics Data System (ADS)

Yuan, W. X.; Li, Z. J.

2012-01-01

CaCu3Ti4O12 (CCTO) powder was synthesized by the combustion method. The effect of sintering temperature was studied on dielectric properties of the prepared ceramic samples. They have the dielectric constant of ~31 000 and 80 000 for the grain size of 0.3 and 30-100 μm. It is unusual for CCTO with a grain size of 0.3 μm to have a dielectric constant of ~31 000. Their giant dielectric constant could be explained by a two-step internal-barrier-layer-capacitor model, associated with grain boundaries and domain boundaries. The existence of domain boundaries helped to explain the contradiction of the dielectric mechanisms between polycrystalline and single-crystal CCTO.

Investigation of microscale dielectric barrier discharge plasma devices

NASA Astrophysics Data System (ADS)

Zito, Justin C.

This dissertation presents research performed on reduced-scale dielectric barrier discharge (DBD) plasma actuators. A first generation of microscale DBD actuators are designed and manufactured using polymeric dielectric layers, and successfully demonstrate operation at reduced scales. The actuators are 1 cm long and vary in width from tens of microns to several millimeters. A thin-film polymer or ceramic material is used as the dielectric barrier with thicknesses from 5 to 20 microns. The devices are characterized for their electrical, fluidic and mechanical performance. With electrical input of 5 kVpp, 1 kHz, the microscale DBD actuators induce a wall jet with velocity reaching up to 2 m/s and produce 3.5 mN/m of thrust, while consuming an average power of 20 W/m. A 5 mN/m plasma body force was observed, acting on the surrounding air. Failure of the microscale DBD actuators is investigated using thermal measurements of the dielectric surface in addition to both optical and scanning electron microscopy. The cause of device failure is identified as erosion of the dielectric surface due to collisions with ions from the discharge. A second generation of microscale actuators is then designed and manufactured using a more reliable dielectric material, namely silicon dioxide. These actuators demonstrate a significant improvement in device lifetime compared with first-generation microscale DBD actuators. The increase in actuator lifetime allowed the electrical, fluidic and mechanical characterization to be repeated over several input voltages and frequencies. At 7 kVpp, 1 kHz, the actuators with SiO2 dielectric induced velocities up to 1.5 m/s and demonstrated 1.4 mN/m of thrust while consuming an average power of 41 W/m. The plasma body force reached up to 2.5 mN/m. Depending on electrical input, the induced velocity and thrust span an order of magnitude in range. Comparisons are made with macroscale DBD actuators which relate the actuator's output performance and power consumption with the mass and volume of the actuator design. The small size and of microscale DBD actuators reduces its weight and power requirements, making them attractive for portable or battery-powered applications (e.g., on UAVs).

Dielectric and structural properties of diffuse ferroelectric phase transition in Pb1.85K1.15Li0.15Nb5O15 ceramic

NASA Astrophysics Data System (ADS)

Choukri, E.; Gagou, Y.; Mezzane, D.; Abkhar, Z.; El Moznine, R.; Luk'yanchuk, I.; Saint-Grégoire, P.; Kavokin, A. V.

2011-02-01

We studied the structural and dielectric properties of new Tetragonal Tungsten Bronze (TTB) ceramics Pb1.85K1.15Li0.15Nb5O15 that was synthesized by solid-state reaction. We pay a special attention to the diffuse phase transition (DPT) that occurs close to 425 °C. Using dielectric measurements in a frequency range of 10 Hz-1 MHz and in the temperature range 30-560 °C, we have shown that the real permittivity close to DPT is well described by Santos-Eiras phenomenological model. Space-charge polarization, relaxation phenomena and free charges conductivity have been analyzed using dielectric spectroscopy impedance and modulus characterization. Cole-Cole plots show a non-Debye (polydispersive) type relaxation. In paraelectric phase the Arrhenius activation energy was determined as Eτ = 0.72 eV. We demonstrated that frequency dependence of ac conductivity at different temperatures obeys the Jonscher's universal law: σac = σdc + A(ω)n.

Chemical Mechanical Polishing of Ruthenium, Cobalt, and Black Diamond Films

NASA Astrophysics Data System (ADS)

Peethala, Brown Cornelius

Ta/TaN bilayer serves as the diffusion barrier as well as the adhesion promoter between Cu and the dielectric in 32 nm technology devices. A key concern of future technology devices (<32 nm) for Cu interconnects is the extendibility of TaN/Ta/Cu-seed to sustain the diffusion barrier performance without forming voids and meeting the requirements of low resistivity. These are very challenging requirements for the Ta/TaN bilayer at a thickness of < 5 nm. Hence, ruthenium (Ru) and cobalt (Co), among these, are being considered for replacing Ta/TaN as barrier materials for Cu interconnects in future technology devices. Both are very attractive for reasons such as the capability of direct electroplating of Cu, lower resistivity and for a single layer (vs. a bilayer of Ta/TaN) to act as a barrier. During patterning, they need to be planarized using conventional chemical mechanical polishing (CMP) to achieve a planar surface. However, CMP of these new barrier materials requires novel slurry compositions that provide adequate selectivity towards Cu and dielectric films, and minimize galvanic corrosion. Apart from the application as a barrier, Ru also has been proposed as a lower electrode material in metal-insulator-metal capacitors where high (> 50 nm/min) Ru removal rates (RRs) are required and as a stop layer in magnetic recording head fabrication where low (< 1 nm/min) Ru RRs are desired. A Ru removal rate of ˜60 nm/min was achieved with a colloidal silica-based slurry at pH 9 using potassium periodate (KIO4) as the oxidizer. At this pH, toxic RuO4 does not form eliminating a major challenge in Ru CMP. This removal rate was obtained by increasing the solubility of KIO4 by adding potassium hydroxide (KOH). It was also determined that increased the ionic strength is not responsible for the observed increase in Ru removal rate. Benzotirazole (BTA) and ascorbic acid were added to the slurry to reduce the open circuit potential (Eoc) difference between Cu and Ru to ˜20 mV from about 550 mV in the absence of additives. A removal mechanism with KIO4 as the oxidizing agent is proposed based on the formation of several ruthenium oxides, some of which formed residues on the polishing pad below a pH of ˜7. Next, a colloidal silica-based slurry with hydrogen peroxide (H 2O2) as the oxidizer (1 wt%), and arginine (0.5 wt%) as the complexing agent was developed to polish Co at pH 10. The Eoc between Cu and Co at the above conditions was reduced to ˜20 mV compared to ˜250 mV in the absence of additives, suggestive of reduced galvanic corrosion during the Co polishing. The slurry also has the advantages of good post-polish surface quality at pH 10, and no dissolution rate. BTA at a concentration of 5mM in this slurry inhibited Cu dissolution rates and yielded a Cu/Co RR ratio of ˜0.8:1 while the open potential difference between Cu and Co was further reduced to ˜10 mV. The role of H2O2, complexing agent (arginine), silica abrasives, and Co removal mechanism during polishing is discussed. Also, during the barrier CMP, a part of the underlying low-k (SiCOH) material has to be polished to remove any modified surface film. Black Diamond (BD) is a SiCOH type material with a dielectric constant of ˜2.9 and here, polishing of BD was investigated in order to understand the polishing behavior of SiCOH-based materials using the barrier slurries. The slurries that were developed for polishing Co and Ru in this work and Ta/TaN (earlier) were investigated for polishing the Black Diamond (BD) films. Here, it was found that ionic salts play a major role in enhancing the BD RRs to ˜65 nm/min compared to no removal rates in the absence of additives. A removal mechanism in the presence of ionic salts is proposed.

Diagnosis of a short-pulse dielectric barrier discharge at atmospheric pressure in helium with hydrogen-methane admixtures

NASA Astrophysics Data System (ADS)

Nastuta, A. V.; Pohoata, V.; Mihaila, I.; Topala, I.

2018-04-01

In this study, we present results from electrical, optical, and spectroscopic diagnosis of a short-pulse (250 ns) high-power impulse (up to 11 kW) dielectric barrier discharge at atmospheric pressure running in a helium/helium-hydrogen/helium-hydrogen-methane gas mixture. This plasma source is able to generate up to 20 cm3 of plasma volume, pulsed in kilohertz range. The plasma spatio-temporal dynamics are found to be developed in three distinct phases. All the experimental observations reveal a similar dynamic to medium power microsecond barrier discharges, although the power per pulse and current density are up to two orders of magnitude higher than the case of microsecond barrier discharges. This might open the possibility for new applications in the field of gas or surface processing, and even life science. These devices can be used in laboratory experiments relevant for molecular astrophysics.

Evaluation of a new dielectric barrier discharge excitation source for the determination of arsenic with atomic emission spectrometry.

PubMed

Zhu, Zhenli; He, Haiyang; He, Dong; Zheng, Hongtao; Zhang, Caixiang; Hu, Shenghong

2014-05-01

A low power dielectric barrier discharge excitation source was developed to determine arsenic in a cost-effective manner. Arsenic in water was reduced to AsH₃ by hydride generation (HG), which was transported to the miniature dielectric barrier discharge (DBD) excitation source for excitation and optical detection at As 193.7 nm atomic line. The DBD source consists of a quartz tube, a tungsten rod electrode, and a copper coil electrode. The main operation parameters and the potential interferences affecting the determination were investigated. The detection limit for arsenic with the proposed DBD-AES was 4.8 μg L(-1) when the HG products were dried with concentrated H₂SO₄ before introducing to DBD. Repeatability, expressed as the relative standard deviation of the spectral peak height, was 2.8% (n=11) for 0.1 mg L(-1) arsenic solution. The proposed method was successfully applied to the determinations of certified reference material (GBW08605) and nature water samples. Copyright © 2014 Elsevier B.V. All rights reserved.

On the use of pulsed Dielectric Barrier Discharges to control the gas-phase composition of atmospheric pressure air plasmas

NASA Astrophysics Data System (ADS)

Barni, R.; Biganzoli, I.; Dell'Orto, E.; Riccardi, C.

2014-11-01

We presents results obtained from the numerical simulation of the gas-phase chemical kinetics in atmospheric pressure air non-equilibrium plasmas. In particular we have addressed the effect of pulsed operation mode of a plane dielectric barrier discharge. It was conjectured that the large difference in the time scales involved in the fast dissociation of oxygen molecules in plasma and their subsequent reactions to produce ozone and nitrogen oxides, makes the presence of a continuously repeated plasma production unnecessary and a waste of electrical power and thus efficiency. In order to test such suggestion we have performed a numerical study of the composition and the temporal evolution of the gas-phase of atmospheric pressure air non-equilibrium plasmas. Comparison with experimental findings in a dielectric barrier discharge with an electrode configuration symmetrical and almost ideally plane is briefly addressed too, using plasma diagnostics to extract the properties of the single micro-discharges and a sensor to measure the concentration of ozone produced by the plasma.

Visualizing Molecular Diffusion through Passive Permeability Barriers in Cells: Conventional and Novel Approaches

PubMed Central

Lin, Yu-Chun; Phua, Siew Cheng; Lin, Benjamin; Inoue, Takanari

2013-01-01

Diffusion barriers are universal solutions for cells to achieve distinct organizations, compositions, and activities within a limited space. The influence of diffusion barriers on the spatiotemporal dynamics of signaling molecules often determines cellular physiology and functions. Over the years, the passive permeability barriers in various subcellular locales have been characterized using elaborate analytical techniques. In this review, we will summarize the current state of knowledge on the various passive permeability barriers present in mammalian cells. We will conclude with a description of several conventional techniques and one new approach based on chemically-inducible diffusion trap (C-IDT) for probing permeable barriers. PMID:23731778

Nanostructure multilayer dielectric materials for capacitors and insulators

DOEpatents

Barbee, Jr., Troy W.; Johnson, Gary W.

1998-04-21

A capacitor is formed of at least two metal conductors having a multilayer dielectric and opposite dielectric-conductor interface layers in between. The multilayer dielectric includes many alternating layers of amorphous zirconium oxide (ZrO.sub.2) and alumina (Al.sub.2 O.sub.3). The dielectric-conductor interface layers are engineered for increased voltage breakdown and extended service life. The local interfacial work function is increased to reduce charge injection and thus increase breakdown voltage. Proper material choices can prevent electrochemical reactions and diffusion between the conductor and dielectric. Physical vapor deposition is used to deposit the zirconium oxide (ZrO.sub.2) and alumina (Al.sub.2 O.sub.3) in alternating layers to form a nano-laminate.

Nanostructure multilayer dielectric materials for capacitors and insulators

DOEpatents

Barbee, T.W. Jr.; Johnson, G.W.

1998-04-21

A capacitor is formed of at least two metal conductors having a multilayer dielectric and opposite dielectric-conductor interface layers in between. The multilayer dielectric includes many alternating layers of amorphous zirconium oxide (ZrO{sub 2}) and alumina (Al{sub 2}O{sub 3}). The dielectric-conductor interface layers are engineered for increased voltage breakdown and extended service life. The local interfacial work function is increased to reduce charge injection and thus increase breakdown voltage. Proper material choices can prevent electrochemical reactions and diffusion between the conductor and dielectric. Physical vapor deposition is used to deposit the zirconium oxide (ZrO{sub 2}) and alumina (Al{sub 2}O{sub 3}) in alternating layers to form a nano-laminate. 1 fig.

Electrical and chemical properties of XeCl*(308 nm) exciplex lamp created by a dielectric barrier discharge

NASA Astrophysics Data System (ADS)

Baadj, S.; Harrache, Z.; Belasri, A.

2013-12-01

The aim of this work is to highlight, through numerical modeling, the chemical and the electrical characteristics of xenon chloride mixture in XeCl* (308 nm) excimer lamp created by a dielectric barrier discharge. A temporal model, based on the Xe/Cl2 mixture chemistry, the circuit and the Boltzmann equations, is constructed. The effects of operating voltage, Cl2 percentage in the Xe/Cl2 gas mixture, dielectric capacitance, as well as gas pressure on the 308-nm photon generation, under typical experimental operating conditions, have been investigated and discussed. The importance of charged and excited species, including the major electronic and ionic processes, is also demonstrated. The present calculations show clearly that the model predicts the optimal operating conditions and describes the electrical and chemical properties of the XeCl* exciplex lamp.

Temperature dependence of copper diffusion in different thickness amorphous tungsten/tungsten nitride layer

NASA Astrophysics Data System (ADS)

Asgary, Somayeh; Hantehzadeh, Mohammad Reza; Ghoranneviss, Mahmood

2017-11-01

The amorphous W/WN films with various thickness (10, 30 and 40 nm) and excellent thermal stability were successfully prepared on SiO2/Si substrate with evaporation and reactive evaporation method. The W/WN bilayer has technological importance because of its low resistivity, high melting point, and good diffusion barrier properties between Cu and Si. The thermal stability was evaluated by X-ray diffractometer (XRD) and Scanning Electron Microscope (SEM). In annealing process, the amorphous W/WN barrier crystallized and this phenomenon is supposed to be the start of Cu atoms diffusion through W/WN barrier into Si. With occurrence of the high-resistive Cu3Si phase, the W/WN loses its function as a diffusion barrier. The primary mode of Cu diffusion is the diffusion through grain boundaries that form during heat treatments. The amorphous structure with optimum thickness is the key factor to achieve a superior diffusion barrier characteristic. The results show that the failure temperature increased by increasing the W/WN film thickness from 10 to 30 nm but it did not change by increasing the W/WN film thickness from 30 to 40 nm. It is found that the 10 and 40 nm W/WN films are good diffusion barriers at least up to 800°C while the 30 nm W/WN film shows superior properties as a diffusion barrier, but loses its function as a diffusion barrier at about 900°C (that is 100°C higher than for 10 and 40 nm W/WN films).

[Diffusion and diffusion-osmosis models of the charged macromolecule transfer in barriers of biosystems].

PubMed

Varakin, A I; Mazur, V V; Arkhipova, N V; Serianov, Iu V

2009-01-01

Mathematical models of the transfer of charged macromolecules have been constructed on the basis of the classical equations of electromigration diffusion of Helmholtz-Smolukhovskii, Goldman, and Goldman-Hodgkin-Katz. It was shown that ion transfer in placental (mimicking lipid-protein barriers) and muscle barriers occurs by different mechanisms. In placental barriers, the electromigration diffusion occurs along lipid-protein channels formed due to the conformational deformation of phospholipid and protein molecules with the coefficients of diffusion D = (2.6-3.6) x 10(-8) cm2/s. The transfer in muscle barriers is due to the migration across charged interfibrillar channels with the negative diffusion activation energy, which is explained by changes in the structure of muscle fibers and expenditures of thermal energy for the extrusion of Cl- from channel walls with the diffusion coefficient D = (6.0-10.0) x 10(-6) cm2/s.

Dielectric study of chalcogenide (Se80Te20)94Ge6 glass

NASA Astrophysics Data System (ADS)

Sharma, Neha; Patial, Balbir Singh; Thakur, Nagesh

2018-04-01

In the present study, dielectric characteristics specifically dielectric constant (ɛ'), dielectric loss (ɛ″) and AC conductivity (σAC) have been investigated for chalcogenide (Se80Te20)94Ge6 glass in the frequency range from 1Hz to 1MHz and within the temperature range from 300 K to 380 K. ɛ'(ω) and ɛ″(ω) are found to be frequency and temperature dependent. This behaviour is interpreted on the basis of Guintini's theory of dielectric dispersion. The investigated glass obeys the power law ωs (s<1) and decreases as temperature rises. The obtained results are discussed in terms of the correlation barrier hopping (CBH) model proposed by Elliot.

Encapsulation methods and dielectric layers for organic electrical devices

DOEpatents

Blum, Yigal D; Chu, William Siu-Keung; MacQueen, David Brent; Shi, Yijan

2013-07-02

The disclosure provides methods and materials suitable for use as encapsulation barriers and dielectric layers in electronic devices. In one embodiment, for example, there is provided an electroluminescent device or other electronic device with a dielectric layer comprising alternating layers of a silicon-containing bonding material and a ceramic material. The methods provide, for example, electronic devices with increased stability and shelf-life. The invention is useful, for example, in the field of microelectronic devices.

Particle trap with dielectric barrier for use in gas insulated transmission lines

DOEpatents

Dale, Steinar J.

1982-01-01

A gas-insulated transmission line includes an outer sheath, an inner conductor within the outer sheath, insulating supports supporting the inner conductor within the outer sheath, and an insulating gas electrically insulating the inner conductor from the outer sheath. An apertured particle trapping electrode is disposed within the outer sheath, and the electrode has a pair of dielectric members secured at each longitudinal end thereof, with the dielectric members extending outwardly from the apertured electrode.

Interfacial reactions between DBD and porous catalyst in dry methane reforming

NASA Astrophysics Data System (ADS)

Kameshima, Seigo; Mizukami, Ryo; Yamazaki, Takumi; Prananto, Lukman A.; Nozaki, Tomohiro

2018-03-01

Interaction between dielectric barrier discharge (DBD) and porous catalyst in dry methane reforming (CH4  +  CO2  =  2H2  +  2CO) was studied. Coke formation behavior and coke morphology, as well as material conversion and selectivity, over the cross-section of porous pellets was investigated comprehensively by SEM analysis, Raman spectroscopy and pulsed reforming diagnosis, showing DBD and porous pellet interaction is possible only in the interfacial region (the external surface of the pellet): neither generation of DBD nor the diffusion of plasma generated reactive species in the internal micropores is possible. Coke formation and gasification mechanism in nonthermal plasma catalysis of DMR were discussed based on the catalyst effectiveness factor: low-temperature plasma catalysis is equivalent to the high-temperature thermal catalysis.

Passivation coating for flexible substrate mirrors

DOEpatents

Tracy, C. Edwin; Benson, David K.

1990-01-01

A protective diffusion barrier for metalized mirror structures is provided by a layer or coating of silicon nitride which is a very dense, transparent, dielectric material that is impervious to water, alkali, and other impurities and corrosive substances that typically attack the metal layers of mirrors and cause degradation of the mirrors' reflectivity. The silicon nitride layer can be deposited on the substrate before metal deposition thereon to stabilize the metal/substrate interface, and it can be deposited over the metal to encapsulate it and protect the metal from corrosion or other degradation. Mirrors coated with silicon nitride according to this invention can also be used as front surface mirrors. Also, the silver or other reflective metal layer on mirrors comprising thin, lightweight, flexible substrates of metal or polymer sheets coated with glassy layers can be protected with silicon nitride according to this invention.

High-efficiency removal of NOx using dielectric barrier discharge nonthermal plasma with water as an outer electrode

NASA Astrophysics Data System (ADS)

Dan, ZHAO; Feng, YU; Amin, ZHOU; Cunhua, MA; Bin, DAI

2018-01-01

With the rapid increase in the number of cars and the development of industry, nitrogen oxide (NOx) emissions have become a serious and pressing problem. This work reports on the development of a water-cooled dielectric barrier discharge reactor for gaseous NOx removal at low temperature. The characteristics of the reactor are evaluated with and without packing of the reaction tube with 2 mm diameter dielectric beads composed of glass, ZnO, MnO2, ZrO2, or Fe2O3. It is found that the use of a water-cooled tube reduces the temperature, which stabilizes the reaction, and provides a much greater NO conversion efficiency (28.8%) than that obtained using quartz tube (14.1%) at a frequency of 8 kHz with an input voltage of 6.8 kV. Furthermore, under equivalent conditions, packing the reactor tube with glass beads greatly increases the NO conversion efficiency to 95.85%. This is because the dielectric beads alter the distribution of the electric field due to the influence of polarization at the glass bead surfaces, which ultimately enhances the plasma discharge intensity. The presence of the dielectric beads increases the gas residence time within the reactor. Experimental verification and a theoretical basis are provided for the industrial application of the proposed plasma NO removal process employing dielectric bead packing.

The Influence of Gas Composition in Dielectric Barrier Discharges on the Broadening of the Hydrogen H{alpha} Transition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Janus, H. W.

The distribution of hydrogen atoms responsible for emission of the Balmer H{alpha} line in the region of the dielectric barrier discharges in the helium and hydrogen as well as in the argon and hydrogen mixtures, in the direction perpendicular to the electrode surfaces, has bee determined by the optical emission spectroscopy accounting for the polarization of the emitted light. The procedure of fitting the measured line profiles accounting for the Stark effect has been used for determination of the distribution of the electric field in the discharge region.

Interactions between surface discharges induced by volume discharges in a dielectric barrier discharge system

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gao, Yenan; Dong, Lifang, E-mail: donglfhbu@163.com; Zhao, Longhu

2014-10-15

The interaction between micro-discharges involved in surface discharges (SDs) is studied in dielectric barrier discharge system. Instantaneous images taken by high speed cameras show that the SDs are induced by volume discharges (VDs). They cannot cross the midperpendicular of two neighbouring volume charges at low voltage while they stretch along it at high voltage, indicating that there is interaction between SDs. The differences of plasma parameters between SD and VD are studied by optical emission spectroscopy. The simulation of the electric fields of the wall charges accumulated by VD further confirms the existence of the interaction.

Bilayer insulator tunnel barriers for graphene-based vertical hot-electron transistors

NASA Astrophysics Data System (ADS)

Vaziri, S.; Belete, M.; Dentoni Litta, E.; Smith, A. D.; Lupina, G.; Lemme, M. C.; Östling, M.

2015-07-01

Vertical graphene-based device concepts that rely on quantum mechanical tunneling are intensely being discussed in the literature for applications in electronics and optoelectronics. In this work, the carrier transport mechanisms in semiconductor-insulator-graphene (SIG) capacitors are investigated with respect to their suitability as electron emitters in vertical graphene base transistors (GBTs). Several dielectric materials as tunnel barriers are compared, including dielectric double layers. Using bilayer dielectrics, we experimentally demonstrate significant improvements in the electron injection current by promoting Fowler-Nordheim tunneling (FNT) and step tunneling (ST) while suppressing defect mediated carrier transport. High injected tunneling current densities approaching 103 A cm-2 (limited by series resistance), and excellent current-voltage nonlinearity and asymmetry are achieved using a 1 nm thick high quality dielectric, thulium silicate (TmSiO), as the first insulator layer, and titanium dioxide (TiO2) as a high electron affinity second layer insulator. We also confirm the feasibility and effectiveness of our approach in a full GBT structure which shows dramatic improvement in the collector on-state current density with respect to the previously reported GBTs. The device design and the fabrication scheme have been selected with future CMOS process compatibility in mind. This work proposes a bilayer tunnel barrier approach as a promising candidate to be used in high performance vertical graphene-based tunneling devices.

Universal diffusion-limited injection and the hook effect in organic thin-film transistors

NASA Astrophysics Data System (ADS)

Liu, Chuan; Huseynova, Gunel; Xu, Yong; Long, Dang Xuan; Park, Won-Tae; Liu, Xuying; Minari, Takeo; Noh, Yong-Young

2016-07-01

The general form of interfacial contact resistance was derived for organic thin-film transistors (OTFTs) covering various injection mechanisms. Devices with a broad range of materials for contacts, semiconductors, and dielectrics were investigated and the charge injections in staggered OTFTs was found to universally follow the proposed form in the diffusion-limited case, which is signified by the mobility-dependent injection at the metal-semiconductor interfaces. Hence, real ohmic contact can hardly ever be achieved in OTFTs with low carrier concentrations and mobility, and the injection mechanisms include thermionic emission, diffusion, and surface recombination. The non-ohmic injection in OTFTs is manifested by the generally observed hook shape of the output conductance as a function of the drain field. The combined theoretical and experimental results show that interfacial contact resistance generally decreases with carrier mobility, and the injection current is probably determined by the surface recombination rate, which can be promoted by bulk-doping, contact modifications with charge injection layers and dopant layers, and dielectric engineering with high-k dielectric materials.

Universal diffusion-limited injection and the hook effect in organic thin-film transistors.

PubMed

Liu, Chuan; Huseynova, Gunel; Xu, Yong; Long, Dang Xuan; Park, Won-Tae; Liu, Xuying; Minari, Takeo; Noh, Yong-Young

2016-07-21

The general form of interfacial contact resistance was derived for organic thin-film transistors (OTFTs) covering various injection mechanisms. Devices with a broad range of materials for contacts, semiconductors, and dielectrics were investigated and the charge injections in staggered OTFTs was found to universally follow the proposed form in the diffusion-limited case, which is signified by the mobility-dependent injection at the metal-semiconductor interfaces. Hence, real ohmic contact can hardly ever be achieved in OTFTs with low carrier concentrations and mobility, and the injection mechanisms include thermionic emission, diffusion, and surface recombination. The non-ohmic injection in OTFTs is manifested by the generally observed hook shape of the output conductance as a function of the drain field. The combined theoretical and experimental results show that interfacial contact resistance generally decreases with carrier mobility, and the injection current is probably determined by the surface recombination rate, which can be promoted by bulk-doping, contact modifications with charge injection layers and dopant layers, and dielectric engineering with high-k dielectric materials.

Universal diffusion-limited injection and the hook effect in organic thin-film transistors

PubMed Central

Liu, Chuan; Huseynova, Gunel; Xu, Yong; Long, Dang Xuan; Park, Won-Tae; Liu, Xuying; Minari, Takeo; Noh, Yong-Young

2016-01-01

The general form of interfacial contact resistance was derived for organic thin-film transistors (OTFTs) covering various injection mechanisms. Devices with a broad range of materials for contacts, semiconductors, and dielectrics were investigated and the charge injections in staggered OTFTs was found to universally follow the proposed form in the diffusion-limited case, which is signified by the mobility-dependent injection at the metal-semiconductor interfaces. Hence, real ohmic contact can hardly ever be achieved in OTFTs with low carrier concentrations and mobility, and the injection mechanisms include thermionic emission, diffusion, and surface recombination. The non-ohmic injection in OTFTs is manifested by the generally observed hook shape of the output conductance as a function of the drain field. The combined theoretical and experimental results show that interfacial contact resistance generally decreases with carrier mobility, and the injection current is probably determined by the surface recombination rate, which can be promoted by bulk-doping, contact modifications with charge injection layers and dopant layers, and dielectric engineering with high-k dielectric materials. PMID:27440253

Visualizing molecular diffusion through passive permeability barriers in cells: conventional and novel approaches.

PubMed

Lin, Yu-Chun; Phua, Siew Cheng; Lin, Benjamin; Inoue, Takanari

2013-08-01

Diffusion barriers are universal solutions for cells to achieve distinct organizations, compositions, and activities within a limited space. The influence of diffusion barriers on the spatiotemporal dynamics of signaling molecules often determines cellular physiology and functions. Over the years, the passive permeability barriers in various subcellular locales have been characterized using elaborate analytical techniques. In this review, we will summarize the current state of knowledge on the various passive permeability barriers present in mammalian cells. We will conclude with a description of several conventional techniques and one new approach based on chemically inducible diffusion trap (CIDT) for probing permeable barriers. Copyright © 2013 Elsevier Ltd. All rights reserved.

Comparison of fungicidal properties of non-thermal plasma produced by corona discharge and dielectric barrier discharge.

PubMed

Julák, J; Soušková, H; Scholtz, V; Kvasničková, E; Savická, D; Kříha, V

2018-01-01

The inactivation of four micromycete species by action of non-thermal plasma was followed. Two sources of plasma were compared, namely, positive corona discharge and dielectric barrier discharge. The corona discharge appeared as suitable for fungal spore inactivation in water suspension, whereas the barrier discharge inactivated spores on the surface of cultivation agar. Cladosporium sphaerospermum was the most sensitive, being inactivated within 10 min of exposure to plasma, whereas Aspergillus oryzae displayed decrease in viable cell count only, the complete inactivation was not achieved even after 40 min of exposure. Intermediate sensitivity was found for Alternaria sp. and Byssochlamys nivea. The significant delay of growth was observed for all fungi after exposure to sublethal dose of plasma, but we failed to express this effect quantitatively.

The effects of dielectric decrement and finite ion size on differential capacitance of electrolytically gated graphene

NASA Astrophysics Data System (ADS)

Daniels, Lindsey; Scott, Matthew; Mišković, Z. L.

2018-06-01

We analyze the effects of dielectric decrement and finite ion size in an aqueous electrolyte on the capacitance of a graphene electrode, and make comparisons with the effects of dielectric saturation combined with finite ion size. We first derive conditions for the cross-over from a camel-shaped to a bell-shaped capacitance of the diffuse layer. We show next that the total capacitance is dominated by a V-shaped quantum capacitance of graphene at low potentials. A broad peak develops in the total capacitance at high potentials, which is sensitive to the ion size with dielectric saturation, but is stable with dielectric decrement.

Characterization of DBD Plasma Actuators Performance Without External Flow - Part I: Thrust-Voltage Quadratic Relationship in Logarithmic Space for Sinusoidal Excitation

NASA Technical Reports Server (NTRS)

Ashpis, David E.; Laun, Matthew C.

2016-01-01

Results of characterization of Dielectric Barrier Discharge (DBD) plasma actuators without external flow are presented. The results include aerodynamic and electric performance of the actuators without external flow for different geometrical parameters, dielectric materials and applied voltage level and wave form.

Measurements of water molecule density by tunable diode laser absorption spectroscopy in dielectric barrier discharges with gas-water interface

NASA Astrophysics Data System (ADS)

Tachibana, Kunihide; Nakamura, Toshihiro; Kawasaki, Mitsuo; Morita, Tatsuo; Umekawa, Toyofumi; Kawasaki, Masahiro

2018-01-01

We measured water molecule (H2O) density by tunable diode-laser absorption spectroscopy (TDLAS) for applications in dielectric barrier discharges (DBDs) with a gas-water interface. First, the effects of water temperature and presence of gas flow were tested using a Petri dish filled with water and a gas injection nozzle. Second, the TDLAS system was applied to the measurements of H2O density in two types of DBDs; one was a normal (non-inverted) type with a dielectric-covered electrode above a water-filled counter electrode and the other was an inverted type with a water-suspending mesh electrode above a dielectric-covered counter electrode. The H2O density in the normal DBD was close to the density estimated from the saturated vapor pressure, whereas the density in the inverted DBD was about half of that in the former type. The difference is attributed to the upward gas flow in the latter type, that pushes the water molecules up towards the gas-water interface.

Surface charge dynamics and OH and H number density distributions in near-surface nanosecond pulse discharges at a liquid / vapor interface

NASA Astrophysics Data System (ADS)

Winters, Caroline; Petrishchev, Vitaly; Yin, Zhiyao; Lempert, Walter R.; Adamovich, Igor V.

2015-10-01

The present work provides insight into surface charge dynamics and kinetics of radical species reactions in nanosecond pulse discharges sustained at a liquid-vapor interface, above a distilled water surface. The near-surface plasma is sustained using two different discharge configurations, a surface ionization wave discharge between two exposed metal electrodes and a double dielectric barrier discharge. At low discharge pulse repetition rates (~100 Hz), residual surface charge deposition after the discharge pulse is a minor effect. At high pulse repetition rates (~10 kHz), significant negative surface charge accumulation over multiple discharge pulses is detected, both during alternating polarity and negative polarity pulse trains. Laser induced fluorescence (LIF) and two-photon absorption LIF (TALIF) line imaging are used for in situ measurements of spatial distributions of absolute OH and H atom number densities in near-surface, repetitive nanosecond pulse discharge plasmas. Both in a surface ionization wave discharge and in a double dielectric barrier discharge, peak measured H atom number density, [H] is much higher compared to peak OH number density, due to more rapid OH decay in the afterglow between the discharge pulses. Higher OH number density was measured near the regions with higher plasma emission intensity. Both OH and especially H atoms diffuse out of the surface ionization wave plasma volume, up to several mm from the liquid surface. Kinetic modeling calculations using a quasi-zero-dimensional H2O vapor / Ar plasma model are in qualitative agreement with the experimental data. The results demonstrate the experimental capability of in situ radical species number density distribution measurements in liquid-vapor interface plasmas, in a simple canonical geometry that lends itself to the validation of kinetic models.

Influence of the excitation frequency on the density of helium metastable atoms in an atmospheric pressure dielectric barrier discharge

NASA Astrophysics Data System (ADS)

Boisvert, J.-S.; Sadeghi, N.; Margot, J.; Massines, F.

2017-01-01

Diffuse dielectric barrier discharges in atmospheric-pressure helium can be sustained over a wide range of excitation frequencies (from, but not restricted, 25 kHz to 15 MHz). The aim of the present paper is to identify the specific characteristics of the discharge modes that can be sustained in this frequency range, namely, the atmospheric-pressure Townsend-like discharge (APTD-L) mode, the atmospheric-pressure glow discharge (APGD) mode, the Ω mode, the hybrid mode, and the RF-α mode. This is achieved experimentally, by measuring the density of helium metastable atoms, which are known to play a driving role on the discharge kinetics. This density is measured by means of two absorption spectroscopy methods, one using a spectral lamp and the other one using a diode laser as a light source. The first one provides the time-averaged atom densities in the singlet He(21S) and triplet He(23S) metastable states, while with the second one we access the time-resolved density of He(23S) atoms. Time-averaged measurements indicate that the He(23S) density is relatively low in the APTD-L, the Ω and the RF-α modes ( <4 ×1016 m-3 ) slightly higher in the APGD mode ( 2 -7 ×1016 m-3 ), and still higher ( >1 ×1017 m-3 ) in the hybrid mode. The hybrid mode is exclusively observed for frequencies from 0.2 to 3 MHz. However, time-resolved density measurement shows that at 1 MHz and below, the hybrid mode is not continuously sustained. Instead, the discharge oscillates between the Ω and the hybrid mode with a switching frequency about the kilohertz. This explains the significantly lower power required to sustain the plasma as compared to above 1 MHz.

Particle trap with dielectric barrier for use in gas insulated transmission lines

DOEpatents

Dale, S.J.

1982-06-15

A gas-insulated transmission line includes an outer sheath, an inner conductor within the outer sheath, insulating supports supporting the inner conductor within the outer sheath, and an insulating gas electrically insulating the inner conductor from the outer sheath. An apertured particle trapping electrode is disposed within the outer sheath, and the electrode has a pair of dielectric members secured at each longitudinal end thereof, with the dielectric members extending outwardly from the apertured electrode. 7 figs.

Numerical study of the characteristics of a dielectric barrier discharge plasma actuator

NASA Astrophysics Data System (ADS)

Shi, C. A.; Adamiak, K.; Castle, G. S. P.

2018-03-01

A dielectric barrier discharge actuator to control airflow along a flat dielectric plate has been numerically investigated in this paper. In order to avoid large computing times, streamers, Trichel pulses and the ionic reactions involving photons and electrons are neglected. The numerical model assumes two types of generic ions, one positive and one negative, whose drift in the electric field produces the electrohydrodynamic flow. This study provides detailed insights into the physical mechanisms of DBD that include the electric field, space charge transport, surface charge accumulation and air flow motion. The results show the V-I characteristics, velocity profiles and drag force estimates. In addition, the effects of the voltage level, frequency and inlet air velocity on the actuator performance are presented and interpreted. The simulation results show a good agreement with theoretical expectations and experimental data available in literature.

Complex capacitance spectroscopy as a probe for oxidation process of AlO{sub x}-based magnetic tunnel junctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Huang, J.C.A.; Hsu, C.Y.; Taiwan SPIN Research Center, National Chung Cheng University, Chiayi, Taiwan

2004-12-13

Proper as well as under- and over-oxided CoFe-AlO{sub x}-CoFe magnetic tunnel junctions (MTJs) have been systematically investigated in a frequency range from 10{sup 2} to 10{sup 8} Hz by complex capacitance spectroscopy. The dielectric relaxation behavior of the MTJs remarkably disobeys the typical Cole-Cole arc law probably due to the existence of imperfectly blocked Schottky barrier in the metal-insulator interface. The dielectric relaxation response can be successfully modeled on the basis of Debye relaxation by incorporating an interfacial dielectric contribution. In addition, complex capacitance spectroscopy demonstrates significant sensitivity to the oxidation process of metallic Al layers, i.e., almost a fingerprintmore » of under, proper, and over oxidation. This technique provides a fast and simple method to inspect the AlO{sub x} barrier quality of MTJs.« less

Effect of duty-cycles on the air plasma gas-phase of dielectric barrier discharges

NASA Astrophysics Data System (ADS)

Barni, R.; Biganzoli, I.; Dell'Orto, E. C.; Riccardi, C.

2015-10-01

An experimental investigation concerning the effects of a duty-cycle in the supply of a dielectric barrier discharge in atmospheric pressure air has been performed. Electrical characteristics of the discharge have been measured, focusing mainly on the statistical properties of the current filaments and on dielectric surface charging, both affected by the frequent repetition of breakdown imposed by the duty-cycle. Information on the gas-phase composition was gathered too. In particular, a strong enhancement in the ozone formation rate is observed when suitable long pauses separate the active discharge phases. A simulation of the chemical kinetics in the gas-phase, based on a simplified discharge modeling, is briefly described in order to shed light on the observed increase in ozone production. The effect of a duty-cycle on surface modification of polymeric films in order to increase their wettability has been investigated too.

Theoretical analysis of ozone generation by pulsed dielectric barrier discharge in oxygen

NASA Astrophysics Data System (ADS)

Wei, L. S.; Zhou, J. H.; Wang, Z. H.; Cen, K. F.

2007-08-01

The use of very short high-voltage pulses combined with a dielectric layer results in high-energy electrons that dissociate oxygen molecules into atoms, which are a prerequisite for the subsequent production of ozone by collisions with oxygen molecules and third particles. The production of ozone depends on both the electrical and the physical parameters. For ozone generation by pulsed dielectric barrier discharge in oxygen, a mathematical model, which describes the relation between ozone concentration and these parameters that are of importance in its design, is developed according to dimensional analysis theory. A formula considering the ozone destruction factor is derived for predicting the characteristics of the ozone generation, within the range of the corona inception voltage to the gap breakdown voltage. The trend showing the dependence of the concentration of ozone in oxygen on these parameters generally agrees with the experimental results, thus confirming the validity of the mathematical model.

Electrical and chemical properties of XeCl*(308 nm) exciplex lamp created by a dielectric barrier discharge

DOE Office of Scientific and Technical Information (OSTI.GOV)

Baadj, S.; Harrache, Z., E-mail: zharrache@yahoo.com; Belasri, A.

2013-12-15

The aim of this work is to highlight, through numerical modeling, the chemical and the electrical characteristics of xenon chloride mixture in XeCl* (308 nm) excimer lamp created by a dielectric barrier discharge. A temporal model, based on the Xe/Cl{sub 2} mixture chemistry, the circuit and the Boltzmann equations, is constructed. The effects of operating voltage, Cl{sub 2} percentage in the Xe/Cl{sub 2} gas mixture, dielectric capacitance, as well as gas pressure on the 308-nm photon generation, under typical experimental operating conditions, have been investigated and discussed. The importance of charged and excited species, including the major electronic and ionicmore » processes, is also demonstrated. The present calculations show clearly that the model predicts the optimal operating conditions and describes the electrical and chemical properties of the XeCl* exciplex lamp.« less

Post-breakdown secondary discharges at the electrode/dielectric interface of a cylindrical barrier discharge

NASA Astrophysics Data System (ADS)

Carman, Robert; Ward, Barry; Kane, Deborah

2011-10-01

The electrical breakdown characteristics of a double-walled cylindrical dielectric barrier discharge (DBD) lamp with a neon buffer gas under pulsed voltage excitation have been investigated. Following the formation of plasma in the main discharge gap, we have observed secondary breakdown phenomena at the inner and outer mesh electrode/dielectric interfaces under specific operating conditions. Plasma formation at these interfaces is investigated by monitoring the Ozone production rate in controlled flows of ultra high purity oxygen together with the overall electrical voltage-charge characteristics of the lamp. The results show that this secondary breakdown only occurs after the main discharge plasma has been established, and that significant electrical power may be dissipated in generating these spurious secondary plasmas. The results are important with regards to optimising the design and identifying efficient operating regimes of DBD based devices that employ mesh-type or wire/strip electrodes.

Frequency Dependent Electrical and Dielectric Properties of Au/P3HT:PCBM:F4-TCNQ/n-Si Schottky Barrier Diode

NASA Astrophysics Data System (ADS)

Taşçıoğlu, İ.; Tüzün Özmen, Ö.; Şağban, H. M.; Yağlıoğlu, E.; Altındal, Ş.

2017-04-01

In this study, poly(3-hexylthiophene):[6,6]-phenyl-C61-butyric acid methyl ester: 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (P3HT:PCBM:F4-TCNQ) organic film was deposited on n-type silicon (n-Si) substrate by spin coating method. The electrical and dielectric analysis of Au/P3HT:PCBM:F4-TCNQ/n-Si Schottky barrier diode was conducted by means of capacitance-voltage ( C- V) and conductance-voltage ( G/ ω- V) measurements in the frequency range of 10 kHz-2 MHz. The C- V- f plots exhibit fairly large frequency dispersion due to excess capacitance caused by the presence of interface states ( N ss). The values of N ss located in semiconductor bandgap at the organic film/semiconductor interface were calculated by Hill-Coleman method. Experimental results show that dielectric constant ( ɛ') and dielectric loss ( ɛ″) decrease with increasing frequency, whereas loss tangent (tan δ) remains nearly the same. The decrease in ɛ' and ɛ″ was interpreted by the theory of dielectric relaxation due to interfacial polarization. It is also observed that ac electrical conductivity ( σ ac) and electric modulus ( M' and M″) increase with increasing frequency.

Processing effects on the microstructure and dielectric properties of hydrothermal barium titanate and (barium,strontium)titanate thin films

NASA Astrophysics Data System (ADS)

McCormick, Mark Alan

The goal of this work was to produce BaTiO3 and BaxSr (1-x)TiO3 (BST) thin films with high dielectric constants, using a low-temperature (<100°C) hydrothermal synthesis route. To accomplish this, titanium metal-organic precursor films were spin-cast onto metal-coated glass substrates and converted to polycrystalline BaTiO3 or BST upon reacting in aqueous solutions of Ba(OH)2 or Ba(OH)2 and Sr(OH)2. The influences of solution molarity, processing temperature, and reaction time on thin film reaction kinetics, microstructure, and dielectric properties were examined for BaTiO3 films. Post-deposition annealing at temperatures as low as 200°C substantially affected the lattice parameter, dielectric constant, and dielectric loss. This behavior is explained in terms of hydroxyl defect incorporation during film formation. Current-voltage (I-V) measurements were performed to determine the dominant conduction mechanism(s) during application of a do field, and to extract the metal/ceramic barrier height. In particular, Schottky barrier-limited conduction and Poole-Frenkel conduction were investigated as potential leakage mechanisms. For BST thin films, film stoichiometry deviated from the initial solution composition, with a preferred incorporation of Sr2+ into the perovskite lattice. The dielectric constant of the BST films was measured as a function of composition (Ba:Sr ratio) and temperature over the range 25--150°C. Finally, capacitance-voltage (C-V) measurements were made for BST films to determine the influence of film composition on dielectric tunability.

Feasibility study of tungsten as a diffusion barrier between nickel-chromium-aluminum and Gamma/Gamma prime - Delta eutectic alloys

NASA Technical Reports Server (NTRS)

Young, S. G.; Zellars, G. R.

1978-01-01

Coating systems proposed for potential use on eutectic alloy components in high-temperature gas turbine engines were studied with emphasis on deterioration of such systems by diffusion. A 1-mil thick W sheet was placed between eutectic alloys and a NiCrAl layer. Layered test specimens were aged at 1100 C for as long as long as 500 hours. Without the W barrier, the delta phase of the eutectic deteriorated by diffusion of Nb into the NiCrAl. Insertion of the W barrier stopped the diffusion of Nb from delta. Chromium diffusion from the NiCrAl into the gamma/gamma prime phase of the eutectic was greatly reduced by the barrier. However, the barrier thickness decreased with time; and W diffused into both the NiCrAl and the eutectic. When the delta platelets were alined parallel to the NiCrAl layer, rather than perpendicular, diffusion into the eutectic was reduced.

Diffusion properties of molecules at the blood-brain interface: potential contributions of astrocyte endfeet to diffusion barrier functions.

PubMed

Nuriya, Mutsuo; Shinotsuka, Takanori; Yasui, Masato

2013-09-01

Molecular diffusion in the extracellular space (ECS) plays a key role in determining tissue physiology and pharmacology. The blood-brain barrier regulates the exchange of substances between the brain and the blood, but the diffusion properties of molecules at this blood-brain interface, particularly around the astrocyte endfeet, are poorly characterized. In this study, we used 2-photon microscopy and acute brain slices of mouse neocortex and directly assessed the diffusion patterns of fluorescent molecules. By observing the diffusion of unconjugated and 10-kDa dextran-conjugated Alexa Fluor 488 from the ECS of the brain parenchyma to the blood vessels, we find various degrees of diffusion barriers at the endfeet: Some allow the invasion of dye inside the endfoot network while others completely block it. Detailed analyses of the time course for dye clearance support the existence of a tight endfoot network capable of acting as a diffusion barrier. Finally, we show that this diffusion pattern collapses under pathological conditions. These data demonstrate the heterogeneous nature of molecular diffusion dynamics around the endfeet and suggest that these structures can serve as the diffusion barrier. Therefore, astrocyte endfeet may add another layer of regulation to the exchange of molecules between blood vessels and brain parenchyma.

Lifetime of Major Histocompatibility Complex Class-I Membrane Clusters Is Controlled by the Actin Cytoskeleton

PubMed Central

Lavi, Yael; Gov, Nir; Edidin, Michael; Gheber, Levi A.

2012-01-01

Lateral heterogeneity of cell membranes has been demonstrated in numerous studies showing anomalous diffusion of membrane proteins; it has been explained by models and experiments suggesting dynamic barriers to free diffusion, that temporarily confine membrane proteins into microscopic patches. This picture, however, comes short of explaining a steady-state patchy distribution of proteins, in face of the transient opening of the barriers. In our previous work we directly imaged persistent clusters of MHC-I, a type I transmembrane protein, and proposed a model of a dynamic equilibrium between proteins newly delivered to the cell surface by vesicle traffic, temporary confinement by dynamic barriers to lateral diffusion, and dispersion of the clusters by diffusion over the dynamic barriers. Our model predicted that the clusters are dynamic, appearing when an exocytic vesicle fuses with the plasma membrane and dispersing with a typical lifetime that depends on lateral diffusion and the dynamics of barriers. In a subsequent work, we showed this to be the case. Here we test another prediction of the model, and show that changing the stability of actin barriers to lateral diffusion changes cluster lifetimes. We also develop a model for the distribution of cluster lifetimes, consistent with the function of barriers to lateral diffusion in maintaining MHC-I clusters. PMID:22500754

Multilevel Dual Damascene copper interconnections

NASA Astrophysics Data System (ADS)

Lakshminarayanan, S.

Copper has been acknowledged as the interconnect material for future generations of ICs to overcome the bottlenecks on speed and reliability present with the current Al based wiring. A new set of challenges brought to the forefront when copper replaces aluminum, have to be met and resolved to make it a viable option. Unit step processes related to copper technology have been under development for the last few years. In this work, the application of copper as the interconnect material in multilevel structures with SiO2 as the interlevel dielectric has been explored, with emphasis on integration issues and complete process realization. Interconnect definition was achieved by the Dual Damascene approach using chemical mechanical polishing of oxide and copper. The choice of materials used as adhesion promoter/diffusion barrier included Ti, Ta and CVD TiN. Two different polish chemistries (NH4OH or HNO3 based) were used to form the interconnects. The diffusion barrier was removed during polishing (in the case of TiN) or by a post CMP etch (as with Ti or Ta). Copper surface passivation was performed using boron implantation and PECVD nitride encapsulation. The interlevel dielectric way composed of a multilayer stack of PECVD SiO2 and SixNy. A baseline process sequence which ensured the mechanical and thermal compatibility of the different unit steps was first created. A comprehensive test vehicle was designed and test structures were fabricated using the process flow developed. Suitable modifications were subsequently introduced in the sequence as and when processing problems were encountered. Electrical characterization was performed on the fabricated devices, interconnects, contacts and vias. The structures were subjected to thermal stressing to assess their stability and performance. The measurement of interconnect sheet resistances revealed lower copper loss due to dishing on samples polished using HNO3 based slurry. Interconnect resistances remained stable upto 400oC, 500oC and 600oC for Ti, TiN and Ta barriers respectively. Via resistivity on the order of 10-9/ /Omegacm2 was measured for Cu/Ta/Cu interfaces and no degradation in the via resistance was observed upto 600oC on the 2 μm and 3 μm wide contact windows. Characterization of diode leakage and subthreshold currents of CMOS transistors fabricated with Ta adhesion layers, showed the failure of the Ta barrier at 450oC. Despite the good barrier performance of the CVD TiN films, obtaining low contact resistivity may be a concern. The potential use of Cu-Mg alloy as the backend metallization has also been studied. Fully encapsulated wiring has been fabricated by causing the Mg to out- diffuse towards the Cu/SiO2 interfaces and the free copper surface. The inter-connects exhibited good stability and oxidation resistance, but via resistances were extremely high, probably due to the presence of insulating films like MgO or MgF2 at the interface between the two metal levels. It may be possible to decrease the via resistance to values comparable to Cu/Ta/Cu by altering the process flow and using a suitable via clean. When used at the contact level, undesirable interaction with the CoSi2 film was observed at temperatures as low as 350oC. Another problem was the high contact resistance at the Cu-Mg/CoSi2 interface. Hence the use of this alloy as a contact fill material is not feasible at this time. An additional barrier layer may be required between the Cu-Mg and CoSi2 films to protect the integrity of the silicide and provide low contact resistance.

Polymeric hydrogen diffusion barrier, high-pressure storage tank so equipped, method of fabricating a storage tank and method of preventing hydrogen diffusion

DOEpatents

Lessing, Paul A [Idaho Falls, ID

2008-07-22

An electrochemically active hydrogen diffusion barrier which comprises an anode layer, a cathode layer, and an intermediate electrolyte layer, which is conductive to protons and substantially impermeable to hydrogen. A catalytic metal present in or adjacent to the anode layer catalyzes an electrochemical reaction that converts any hydrogen that diffuses through the electrolyte layer to protons and electrons. The protons and electrons are transported to the cathode layer and reacted to form hydrogen. The hydrogen diffusion barrier is applied to a polymeric substrate used in a storage tank to store hydrogen under high pressure. A storage tank equipped with the electrochemically active hydrogen diffusion barrier, a method of fabricating the storage tank, and a method of preventing hydrogen from diffusing out of a storage tank are also disclosed.

Polymeric hydrogen diffusion barrier, high-pressure storage tank so equipped, method of fabricating a storage tank and method of preventing hydrogen diffusion

DOEpatents

Lessing, Paul A.

2004-09-07

An electrochemically active hydrogen diffusion barrier which comprises an anode layer, a cathode layer, and an intermediate electrolyte layer, which is conductive to protons and substantially impermeable to hydrogen. A catalytic metal present in or adjacent to the anode layer catalyzes an electrochemical reaction that converts any hydrogen that diffuses through the electrolyte layer to protons and electrons. The protons and electrons are transported to the cathode layer and reacted to form hydrogen. The hydrogen diffusion barrier is applied to a polymeric substrate used in a storage tank to store hydrogen under high pressure. A storage tank equipped with the electrochemically active hydrogen diffusion barrier, a method of fabricating the storage tank, and a method of preventing hydrogen from diffusing out of a storage tank are also disclosed.

Effects of plasma pretreatment on the process of self-forming Cu-Mn alloy barriers for Cu interconnects

NASA Astrophysics Data System (ADS)

Park, Jae-Hyung; Han, Dong-Suk; Kim, Kyoung-Deok; Park, Jong-Wan

2018-02-01

This study investigated the effect of plasma pretreatment on the process of a self-forming Cu-Mn alloy barrier on porous low-k dielectrics. To study the effects of plasma on the performance of a self-formed Mn-based barrier, low-k dielectrics were pretreated with H2 plasma or NH3 plasma. Cu-Mn alloy materials on low-k substrates that were subject to pretreatment with H2 plasma exhibited lower electrical resistivity values and the formation of thicker Mn-based interlayers than those on low-k substrates that were subject to pretreatment with NH3 plasma. Transmission electron microscopy (TEM), X-ray photoemission spectroscopy (XPS), and thermal stability analyses demonstrated the exceptional performance of the Mn-based interlayer on plasma-pretreated low-k substrates with regard to thickness, chemical composition, and reliability. Plasma treating with H2 gas formed hydrophilic Si-OH bonds on the surface of the low-k layer, resulting in Mn-based interlayers with greater thickness after annealing. However, additional moisture uptake was induced on the surface of the low-k dielectric, degrading electrical reliability. By contrast, plasma treating with NH3 gas was less effective with regard to forming a Mn-based interlayer, but produced a Si-N/C-N layer on the low-k surface, yielding improved barrier characteristics.

Plasma treatment of polyethylene tubes in continuous regime using surface dielectric barrier discharge with water electrodes

NASA Astrophysics Data System (ADS)

Galmiz, Oleksandr; Zemánek, Miroslav; Pavliňák, David; Černák, Mirko

2018-05-01

Combining the surface dielectric barrier discharges generated in contact with water based electrolytes, as the discharge electrodes, we have designed a new type of surface electric discharge, generating thin layers of plasma which propagate along the treated polymer surfaces. The technique was aimed to achieve uniform atmospheric pressure plasma treatment of polymeric tubes and other hollow bodies. The results presented in this work show the possibility of such system to treat outer surface of polymer materials in a continuous mode. The technical details of experimental setup are discussed as well as results of treatment of polyethylene tubes are shown.

Low-temperature sterilization of wrapped materials using flexible sheet-type dielectric barrier discharge

NASA Astrophysics Data System (ADS)

Eto, Hiroyuki; Ono, Yoshihito; Ogino, Akihisa; Nagatsu, Masaaki

2008-12-01

A flexible sheet-type dielectric barrier discharge (DBD) was studied for the low-temperature sterilization of medical instruments wrapped with Tyvek packaging. Sterilization experiments using Geobacillus stearothermophilus spores with a population of 106 were carried out with various mixtures of nitrogen and oxygen. We confirmed the inactivation of spores after 4.5 min of DBD irradiation at a temperature of 28.4 °C and relative humidity of 64.4%. The main sterilizing factors of this method are the ozone and UV emissions generated by DBD in dry air and synergistic OH radicals generated by DBD in moist air.

Restricted ADP movement in cardiomyocytes: Cytosolic diffusion obstacles are complemented with a small number of open mitochondrial voltage-dependent anion channels.

PubMed

Simson, Päivo; Jepihhina, Natalja; Laasmaa, Martin; Peterson, Pearu; Birkedal, Rikke; Vendelin, Marko

2016-08-01

Adequate intracellular energy transfer is crucial for proper cardiac function. In energy starved failing hearts, partial restoration of energy transfer can rescue mechanical performance. There are two types of diffusion obstacles that interfere with energy transfer from mitochondria to ATPases: mitochondrial outer membrane (MOM) with voltage-dependent anion channel (VDAC) permeable to small hydrophilic molecules and cytoplasmatic diffusion barriers grouping ATP-producers and -consumers. So far, there is no method developed to clearly distinguish the contributions of cytoplasmatic barriers and MOM to the overall diffusion restriction. Furthermore, the number of open VDACs in vivo remains unknown. The aim of this work was to establish the partitioning of intracellular diffusion obstacles in cardiomyocytes. We studied the response of mitochondrial oxidative phosphorylation of permeabilized rat cardiomyocytes to changes in extracellular ADP by recording 3D image stacks of NADH autofluorescence. Using cell-specific mathematical models, we determined the permeability of MOM and cytoplasmatic barriers. We found that only ~2% of VDACs are accessible to cytosolic ADP and cytoplasmatic diffusion barriers reduce the apparent diffusion coefficient by 6-10×. In cardiomyocytes, diffusion barriers in the cytoplasm and by the MOM restrict ADP/ATP diffusion to similar extents suggesting a major role of both barriers in energy transfer and other intracellular processes. Copyright © 2016 Elsevier Ltd. All rights reserved.

Kinetic Monte Carlo Simulation of Oxygen and Cation Diffusion in Yttria-Stabilized Zirconia

NASA Technical Reports Server (NTRS)

Good, Brian

2011-01-01

Yttria-stabilized zirconia (YSZ) is of interest to the aerospace community, notably for its application as a thermal barrier coating for turbine engine components. In such an application, diffusion of both oxygen ions and cations is of concern. Oxygen diffusion can lead to deterioration of a coated part, and often necessitates an environmental barrier coating. Cation diffusion in YSZ is much slower than oxygen diffusion. However, such diffusion is a mechanism by which creep takes place, potentially affecting the mechanical integrity and phase stability of the coating. In other applications, the high oxygen diffusivity of YSZ is useful, and makes the material of interest for use as a solid-state electrolyte in fuel cells. The kinetic Monte Carlo (kMC) method offers a number of advantages compared with the more widely known molecular dynamics simulation method. In particular, kMC is much more efficient for the study of processes, such as diffusion, that involve infrequent events. We describe the results of kinetic Monte Carlo computer simulations of oxygen and cation diffusion in YSZ. Using diffusive energy barriers from ab initio calculations and from the literature, we present results on the temperature dependence of oxygen and cation diffusivity, and on the dependence of the diffusivities on yttria concentration and oxygen sublattice vacancy concentration. We also present results of the effect on diffusivity of oxygen vacancies in the vicinity of the barrier cations that determine the oxygen diffusion energy barriers.

Control of Ga-oxide interlayer growth and Ga diffusion in SiO2/GaN stacks for high-quality GaN-based metal-oxide-semiconductor devices with improved gate dielectric reliability

NASA Astrophysics Data System (ADS)

Yamada, Takahiro; Watanabe, Kenta; Nozaki, Mikito; Yamada, Hisashi; Takahashi, Tokio; Shimizu, Mitsuaki; Yoshigoe, Akitaka; Hosoi, Takuji; Shimura, Takayoshi; Watanabe, Heiji

2018-01-01

A simple and feasible method for fabricating high-quality and highly reliable GaN-based metal-oxide-semiconductor (MOS) devices was developed. The direct chemical vapor deposition of SiO2 films on GaN substrates forming Ga-oxide interlayers was carried out to fabricate SiO2/GaO x /GaN stacked structures. Although well-behaved hysteresis-free GaN-MOS capacitors with extremely low interface state densities below 1010 cm-2 eV-1 were obtained by postdeposition annealing, Ga diffusion into overlying SiO2 layers severely degraded the dielectric breakdown characteristics. However, this problem was found to be solved by rapid thermal processing, leading to the superior performance of the GaN-MOS devices in terms of interface quality, insulating property, and gate dielectric reliability.

Lithium diffusion at Si-C interfaces in silicon-graphene composites

DOE Office of Scientific and Technical Information (OSTI.GOV)

Odbadrakh, Khorgolkhuu; McNutt, N. W.; Nicholson, D. M.

2014-08-04

Models of intercalated Li and its diffusion in Si-Graphene interfaces are investigated using density functional theory. Results suggest that the presence of interfaces alters the energetics of Li binding and diffusion significantly compared to bare Si or Graphene surfaces. Our results show that cavities along reconstructed Si surface provide diffusion paths for Li. Diffusion barriers calculated along these cavities are significantly lower than penetration barriers to bulk Si. Interaction with Si surface results in graphene defects, creating Li diffusion paths that are confined along the cavities but have still lower barrier than in bulk Si.

Effect of SiN x diffusion barrier thickness on the structural properties and photocatalytic activity of TiO2 films obtained by sol-gel dip coating and reactive magnetron sputtering.

PubMed

Ghazzal, Mohamed Nawfal; Aubry, Eric; Chaoui, Nouari; Robert, Didier

2015-01-01

We investigate the effect of the thickness of the silicon nitride (SiN x ) diffusion barrier on the structural and photocatalytic efficiency of TiO2 films obtained with different processes. We show that the structural and photocatalytic efficiency of TiO2 films produced using soft chemistry (sol-gel) and physical methods (reactive sputtering) are affected differentially by the intercalating SiN x diffusion barrier. Increasing the thickness of the SiN x diffusion barrier induced a gradual decrease of the crystallite size of TiO2 films obtained by the sol-gel process. However, TiO2 obtained using the reactive sputtering method showed no dependence on the thickness of the SiN x barrier diffusion. The SiN x barrier diffusion showed a beneficial effect on the photocatalytic efficiency of TiO2 films regardless of the synthesis method used. The proposed mechanism leading to the improvement in the photocatalytic efficiency of the TiO2 films obtained by each process was discussed.

Studying the Impact of Modified Saccharides on the Molecular Dynamics and Crystallization Tendencies of Model API Nifedipine.

PubMed

Kaminska, E; Tarnacka, M; Wlodarczyk, P; Jurkiewicz, K; Kolodziejczyk, K; Dulski, M; Haznar-Garbacz, D; Hawelek, L; Kaminski, K; Wlodarczyk, A; Paluch, M

2015-08-03

Molecular dynamics of pure nifedipine and its solid dispersions with modified carbohydrates as well as the crystallization kinetics of active pharmaceutical ingredient (API) above and below the glass transition temperature were studied in detail by means of broadband dielectric spectroscopy (BDS), differential scanning calorimetry (DSC), and X-ray diffraction method. It was found that the activation barrier of crystallization increases in molecular dispersions composed of acetylated disaccharides, whereas it slightly decreases in those consisting of modified monocarbohydrates for the experiments carried out above the glass transition temperature. As shown by molecular dynamics simulations it can be related to the strength, character, and structure of intermolecular interactions between API and saccharides, which vary dependently on the excipient. Long-term physical stability studies showed that, in solid dispersions consisting of acetylated maltose and acetylated sucrose, the crystallization of nifedipine is dramatically slowed down, although it is still observable for a low concentration of excipients. With increasing content of modified carbohydrates, the crystallization of API becomes completely suppressed. This is most likely due to additional barriers relating to the intermolecular interactions and diffusion of nifedipine that must be overcome to trigger the crystallization process.

Surface Roughness of Various Diamond-Like Carbon Films

NASA Astrophysics Data System (ADS)

Liu, Dongping; Liu, Yanhong; Chen, Baoxiang

2006-11-01

Atomic force microscopy is used to estimate and compare the surface morphology of hydrogenated and hydrogen-free diamond-like carbon (DLC) films. The films were prepared by using DC magnetron sputtering of a graphite target, pulsed cathodic carbon arcs, electron cyclotron resonance (ECR), plasma source ion implantation and dielectric barrier discharge (DBD). The difference in the surface structure is presented for each method of deposition. The influences of various discharge parameters on the film surface properties are discussed based upon the experimental results. The coalescence process via the diffusion of adsorbed carbon species is responsible for the formation of hydrogen-free DLC films with rough surfaces. The films with surface roughness at an atomic level can be deposited by energetic ion impacts in a highly ionized carbon plasma. The dangling bonds created by atomic hydrogen lead to the uniform growth of hydrocarbon species at the a-C:H film surfaces of the ECR or DBD plasmas.

Diffusion Barriers to Increase the Oxidative Life of Overlay Coatings

NASA Technical Reports Server (NTRS)

Nesbitt, James A.; Lei, Jih-Fen

1999-01-01

Currently, most blades and vanes in the hottest section of aero gas turbine engines require some type of coating for oxidation protection. Newly developed single crystal superalloys have the mechanical potential to operate at increasingly higher component temperatures. However, at these elevated temperatures, coating/substrate interdiffusion can shorten the protective life of the coating. Diffusion barriers between overlay coatings and substrates are being examined to extend the protective life of the coating. A previously- developed finite-difference diffusion model has been modified to predict the oxidative life enhancement due to use of a diffusion barrier. The original diffusion model, designated COSIM, simulates Al diffusion in the coating to the growing oxide scale as well as Al diffusion into the substrate. The COSIM model incorporates an oxide growth and spalling model to provide the rate of Al consumption during cyclic oxidation. Coating failure is predicted when the Al concentration at the coating surface drops to a defined critical level. The modified COSIM model predicts the oxidative life of an overlay coating when a diffusion barrier is present eliminating diffusion of Al from the coating into the substrate. Both the original and the modified diffusion models have been used to predict the effectiveness of a diffusion barrier in extending the protective life of a NiCrAl overlay coating undergoing cyclic oxidation at 1100 C.

Ionic diffusion and space charge polarization in structural characterization of biological tissues.

PubMed

Jastrzebska, M; Kocot, A

2004-06-01

In this study, a new approach to the analysis of the low-frequency (1-10(7) Hz) dielectric spectra of biological tissue, has been described. The experimental results are interpreted in terms of ionic diffusion and space charge polarization according to Sawada's theory. The new presentation of dielectric spectra, i.e. ([Formula: see text]) [Formula: see text] has been used. This method results in peaks which are narrower and better resolved than both the measured loss peaks and an alternative loss quantity [Formula: see text]. The presented method and Sawada's expression have been applied to the analysis of changes in the spatial molecular structure of a collagen fibril network in pericardium tissue exposed to glutaraldehyde (GA), with respect to the native tissue. The diffusion coefficient of ions was estimated on the basis of a dielectric dispersion measurement for an aqueous NaCl solution with a well-calibrated distance between the electrodes. The fitting procedure of a theoretical function to the experimental data allowed us to determine three diffusive relaxation regions with three structural distance parameters d(s), describing the spatial arrangement of collagen fibrils in pericardium tissue. It has been found that a significant decrease in the structural distance d(s) from 87 nm to 45 nm may correspond to a reduction in the interfibrillar distance within GA cross-linked tissue.

A sphingolipid-dependent diffusion barrier confines ER stress to the yeast mother cell

PubMed Central

Clay, Lori; Caudron, Fabrice; Denoth-Lippuner, Annina; Boettcher, Barbara; Buvelot Frei, Stéphanie; Snapp, Erik Lee; Barral, Yves

2014-01-01

In many cell types, lateral diffusion barriers compartmentalize the plasma membrane and, at least in budding yeast, the endoplasmic reticulum (ER). However, the molecular nature of these barriers, their mode of action and their cellular functions are unclear. Here, we show that misfolded proteins of the ER remain confined into the mother compartment of budding yeast cells. Confinement required the formation of a lateral diffusion barrier in the form of a distinct domain of the ER-membrane at the bud neck, in a septin-, Bud1 GTPase- and sphingolipid-dependent manner. The sphingolipids, but not Bud1, also contributed to barrier formation in the outer membrane of the dividing nucleus. Barrier-dependent confinement of ER stress into the mother cell promoted aging. Together, our data clarify the physical nature of lateral diffusion barriers in the ER and establish the role of such barriers in the asymmetric segregation of proteotoxic misfolded proteins during cell division and aging. DOI: http://dx.doi.org/10.7554/eLife.01883.001 PMID:24843009

The possibility of giant dielectric materials for multilayer ceramic capacitors.

PubMed

Ishii, Tatsuya; Endo, Makoto; Masuda, Kenichiro; Ishida, Keisuke

2013-02-11

There have been numerous reports on discovery of giant dielectric permittivity materials called internal barrier layer capacitor in the recent years. We took particular note of one of such materials, i.e., BaTiO 3 with SiO 2 coating. It shows expressions of giant electric permittivity when processed by spark plasma sintering. So we evaluated various electrical characteristics of this material to find out whether it is applicable to multilayer ceramic capacitors. Our evaluation revealed that the isolated surface structure is the sole cause of expressions of giant dielectric permittivity.

Strain-driven phase transitions and associated dielectric/piezoelectric anomalies in BiFeO3 thin films

NASA Astrophysics Data System (ADS)

Huang, C. W.; Chu, Y. H.; Chen, Z. H.; Wang, Junling; Sritharan, T.; He, Q.; Ramesh, R.; Chen, Lang

2010-10-01

Strain-driven phase transitions and related intrinsic polarization, dielectric, and piezoelectric properties for single-domain films were studied for BiFeO3 using phenomenological Landau-Devonshire theory. A stable and mixed structure between tetragonal and rhombohedral-like (monoclinic) phases is predicted at a compressive misfit strain of um=-0.0382 without an energy barrier. For a tensile misfit strain of um=0.0272, another phase transition between the monoclinic and orthorhombic phases was predicted with sharply high dielectric and piezoelectric responses.

Effect of Dielectric and Liquid on Plasma Sterilization Using Dielectric Barrier Discharge Plasma

PubMed Central

Mastanaiah, Navya; Johnson, Judith A.; Roy, Subrata

2013-01-01

Plasma sterilization offers a faster, less toxic and versatile alternative to conventional sterilization methods. Using a relatively small, low temperature, atmospheric, dielectric barrier discharge surface plasma generator, we achieved ≥6 log reduction in concentration of vegetative bacterial and yeast cells within 4 minutes and ≥6 log reduction of Geobacillus stearothermophilus spores within 20 minutes. Plasma sterilization is influenced by a wide variety of factors. Two factors studied in this particular paper are the effect of using different dielectric substrates and the significance of the amount of liquid on the dielectric surface. Of the two dielectric substrates tested (FR4 and semi-ceramic (SC)), it is noted that the FR4 is more efficient in terms of time taken for complete inactivation. FR4 is more efficient at generating plasma as shown by the intensity of spectral peaks, amount of ozone generated, the power used and the speed of killing vegetative cells. The surface temperature during plasma generation is also higher in the case of FR4. An inoculated FR4 or SC device produces less ozone than the respective clean devices. Temperature studies show that the surface temperatures reached during plasma generation are in the range of 30°C–66°C (for FR4) and 20°C–49°C (for SC). Surface temperatures during plasma generation of inoculated devices are lower than the corresponding temperatures of clean devices. pH studies indicate a slight reduction in pH value due to plasma generation, which implies that while temperature and acidification may play a minor role in DBD plasma sterilization, the presence of the liquid on the dielectric surface hampers sterilization and as the liquid evaporates, sterilization improves. PMID:23951023

Effect of dielectric and liquid on plasma sterilization using dielectric barrier discharge plasma.

PubMed

Mastanaiah, Navya; Johnson, Judith A; Roy, Subrata

2013-01-01

Plasma sterilization offers a faster, less toxic and versatile alternative to conventional sterilization methods. Using a relatively small, low temperature, atmospheric, dielectric barrier discharge surface plasma generator, we achieved ≥ 6 log reduction in concentration of vegetative bacterial and yeast cells within 4 minutes and ≥ 6 log reduction of Geobacillus stearothermophilus spores within 20 minutes. Plasma sterilization is influenced by a wide variety of factors. Two factors studied in this particular paper are the effect of using different dielectric substrates and the significance of the amount of liquid on the dielectric surface. Of the two dielectric substrates tested (FR4 and semi-ceramic (SC)), it is noted that the FR4 is more efficient in terms of time taken for complete inactivation. FR4 is more efficient at generating plasma as shown by the intensity of spectral peaks, amount of ozone generated, the power used and the speed of killing vegetative cells. The surface temperature during plasma generation is also higher in the case of FR4. An inoculated FR4 or SC device produces less ozone than the respective clean devices. Temperature studies show that the surface temperatures reached during plasma generation are in the range of 30°C-66 °C (for FR4) and 20 °C-49 °C (for SC). Surface temperatures during plasma generation of inoculated devices are lower than the corresponding temperatures of clean devices. pH studies indicate a slight reduction in pH value due to plasma generation, which implies that while temperature and acidification may play a minor role in DBD plasma sterilization, the presence of the liquid on the dielectric surface hampers sterilization and as the liquid evaporates, sterilization improves.

Effect of the charge surface distribution on the flow field induced by a dielectric barrier discharge actuator

NASA Astrophysics Data System (ADS)

Cristofolini, Andrea; Neretti, Gabriele; Borghi, Carlo A.

2013-08-01

The Electro-Hydro-Dynamics (EHD) interaction induced by a surface dielectric barrier discharge in the aerodynamic boundary layer at one atmosphere still air has been investigated. Three different geometrical configurations of the actuator have been utilized. In the first configuration, an electrode pair separated by a 2 mm dielectric sheet has been used. The second and the third configurations have been obtained by adding a third electrode on the upper side of the dielectric surface. This electrode has been placed downstream of the upper electrode and has been connected to ground or has been left floating. Three different dielectric materials have been utilized. The high voltage upper electrode was fed by an a.c. electric tension. Measurements of the dielectric surface potential generated by the charge deposition have been done. The discharge has been switched off after positive and negative phases of the plasma current (the current phase was characterized by a positive or a negative value, respectively). The measurements have been carried out after both phases. The charge distribution strongly depended on the switching off phase and was heavily affected by the geometrical configuration. A remarkable decrease of the charge deposited on the dielectric surface has been detected when the third electrode was connected to ground. Velocity profiles were obtained by using a Pitot probe. They showed that the presence of the third electrode limits the fluid dynamics performance of the actuator. A relation between the charge surface distribution and the EHD interaction phenomenon has been found. Imaging of the plasma has been done to evaluate the discharge structure and the extension of the plasma in the configurations investigated.

Mechanistic study of plasma damage to porous low-k: Process development and dielectric recovery

NASA Astrophysics Data System (ADS)

Shi, Hualiang

Low-k dielectrics with porosity are being introduced to reduce the RC delay of Cu/low-k interconnect. However, during the O2 plasma ashing process, the porous low-k dielectrics tend to degrade due to methyl depletion, moisture uptake, and densification, increasing the dielectric constant and leakage current. This dissertation presents a study of the mechanisms of plasma damage and dielectric recovery. The kinetics of plasma interaction with low-k dielectrics was investigated both experimentally and theoretically. By using a gap structure, the roles of ion, photon, and radical in producing damage on low-k dielectrics were differentiated. Oxidative plasma induced damage was proportional to the oxygen radical density, enhanced by VUV photon, and increased with substrate temperature. Ion bombardment induced surface densification, blocking radical diffusion. Two analytical models were derived to quantify the plasma damage. Based on the radical diffusion, reaction, and recombination inside porous low-k dielectrics, a plasma altered layer model was derived to interpret the chemical effect in the low ion energy region. It predicted that oxidative plasma induced damage can be reduced by decreasing pore radius, substrate temperature, and oxygen radical density and increasing carbon concentration and surface recombination rate inside low-k dielectrics. The model validity was verified by experiments and Monte-Carlo simulations. This model was also extended to the patterned low-k structure. Based on the ion collision cascade process, a sputtering yield model was introduced to interpret the physical effect in the high ion energy region. The model validity was verified by checking the ion angular and energy dependences of sputtering yield using O2/He/Ar plasma, low-k dielectrics with different k values, and a Faraday cage. Low-k dielectrics and plasma process were optimized to reduce plasma damage, including increasing carbon concentration in low-k dielectrics, switching plasma generator from ICP to RIE, increasing hard mask thickness, replacing O2 by CO2 plasma, increasing CO addition in CO/O 2 plasma, and increasing N2 addition in CO2/N 2 plasma. By combining analytical techniques with the Kramers-Kronig dispersion relation and quantum chemistry calculation, the origin of dielectric loss was ascribed to the physisorbed water molecules. Post-ash CH4 plasma treatment, vapor silylation process, and UV radiation were developed to repair plasma damage.

CO Diffusion and Desorption Kinetics in CO2 Ices

NASA Astrophysics Data System (ADS)

Cooke, Ilsa R.; Öberg, Karin I.; Fayolle, Edith C.; Peeler, Zoe; Bergner, Jennifer B.

2018-01-01

The diffusion of species in icy dust grain mantles is a fundamental process that shapes the chemistry of interstellar regions; yet, measurements of diffusion in interstellar ice analogs are scarce. Here we present measurements of CO diffusion into CO2 ice at low temperatures (T = 11–23 K) using CO2 longitudinal optical phonon modes to monitor the level of mixing of initially layered ices. We model the diffusion kinetics using Fick’s second law and find that the temperature-dependent diffusion coefficients are well fit by an Arrhenius equation, giving a diffusion barrier of 300 ± 40 K. The low barrier along with the diffusion kinetics through isotopically labeled layers suggest that CO diffuses through CO2 along pore surfaces rather than through bulk diffusion. In complementary experiments, we measure the desorption energy of CO from CO2 ices deposited at 11–50 K by temperature programmed desorption and find that the desorption barrier ranges from 1240 ± 90 K to 1410 ± 70 K depending on the CO2 deposition temperature and resultant ice porosity. The measured CO–CO2 desorption barriers demonstrate that CO binds equally well to CO2 and H2O ices when both are compact. The CO–CO2 diffusion–desorption barrier ratio ranges from 0.21 to 0.24 dependent on the binding environment during diffusion. The diffusion–desorption ratio is consistent with the above hypothesis that the observed diffusion is a surface process and adds to previous experimental evidence on diffusion in water ice that suggests surface diffusion is important to the mobility of molecules within interstellar ices.

Kinetic Monte Carlo Simulation of Oxygen Diffusion in Ytterbium Disilicate

NASA Astrophysics Data System (ADS)

Good, Brian

2015-03-01

Ytterbium disilicate is of interest as a potential environmental barrier coating for aerospace applications, notably for use in next generation jet turbine engines. In such applications, the diffusion of oxygen and water vapor through these coatings is undesirable if high temperature corrosion is to be avoided. In an effort to understand the diffusion process in these materials, we have performed kinetic Monte Carlo simulations of vacancy-mediated oxygen diffusion in Ytterbium Disilicate. Oxygen vacancy site energies and diffusion barrier energies are computed using Density Functional Theory. We find that many potential diffusion paths involve large barrier energies, but some paths have barrier energies smaller than one electron volt. However, computed vacancy formation energies suggest that the intrinsic vacancy concentration is small in the pure material, with the result that the material is unlikely to exhibit significant oxygen permeability.

Approximation of effective moisture-diffusion coefficient to characterize performance of a barrier coating

NASA Astrophysics Data System (ADS)

Nagai, Shingo

2013-11-01

We report estimation of the effective diffusion coefficient of moisture through a barrier coating to develop an encapsulation technology for the thin-film electronics industry. This investigation targeted a silicon oxide (SiOx) film that was deposited on a plastic substrate by a large-process-area web coater. Using the finite difference method based on diffusion theory, our estimation of the effective diffusion coefficient of a SiOx film corresponded to that of bulk glass that was previously reported. This result suggested that the low diffusivities of barrier films can be obtained on a mass-production level in the factory. In this investigation, experimental observations and mathematical confirmation revealed the limit of the water vapor transmission rate on the single barrier coating.

Colossal dielectric permittivity in (Al + Nb) co-doped rutile SnO2 ceramics with low loss at room temperature

NASA Astrophysics Data System (ADS)

Song, Yongli; Wang, Xianjie; Zhang, Xingquan; Qi, Xudong; Liu, Zhiguo; Zhang, Lingli; Zhang, Yu; Wang, Yang; Sui, Yu; Song, Bo

2016-10-01

The exploration of colossal dielectric permittivity (CP) materials with low dielectric loss in a wide range of frequencies/temperatures continues to attract considerable interest. In this paper, we report CP in (Al + Nb) co-doped rutile SnO2 ceramics with a low dielectric loss at room temperature. Al0.02Nb0.05Sn0.93O2 and Al0.03Nb0.05Sn0.92O2 ceramics exhibit high relative dielectric permittivities (above 103) and low dielectric losses (0.015 < tan δ < 0.1) in a wide range of frequencies and at temperatures from 140 to 400 K. Al doping can effectively modulate the dielectric behavior by increasing the grain and grain boundary resistances. The large differences in the resistance and conductive activation energy of the grains and grain boundaries suggest that the CP in co-doped SnO2 ceramics can be attributed to the internal barrier layer capacitor effect.

Dielectric and modulus analysis of the photoabsorber Cu2SnS3

NASA Astrophysics Data System (ADS)

Lahlali, S.; Essaleh, L.; Belaqziz, M.; Chehouani, H.; Alimoussa, A.; Djessas, K.; Viallet, B.; Gauffier, J. L.; Cayez, S.

2017-12-01

Dielectric properties of the ternary semiconductor compound Cu2SnS3 is studied for the first time in the high temperature range from 300 °C to 440 °C with the frequency range 1 kHz to 1 MHz. The dielectric constant ε ‧ and dielectric loss tan (δ) were observed to increase with temperature and decrease rapidly with frequency to remains constant at high frequencies. The variation of the dielectric loss Ln (ε ") with L n (ω) was found to follow the empirical law, ε " = B ω m (T). The dielectric data were analyzed using complex electrical modulus M* at various temperatures. The activation energy responsible for the relaxation is estimated from the analysis of the modulus spectra. The value of the hopping barrier potential is estimated from the dielectric loss and compared with the value previously obtained from ac-conductivity. These results are critical for understanding the behavior of based polycrystalline family of Cu2SnS3 for absorber materials in solar-cells.

How thin barrier metal can be used to prevent Co diffusion in the modern integrated circuits?

NASA Astrophysics Data System (ADS)

Dixit, Hemant; Konar, Aniruddha; Pandey, Rajan; Ethirajan, Tamilmani

2017-11-01

In modern integrated circuits (ICs), billions of transistors are connected to each other via thin metal layers (e.g. copper, cobalt, etc) known as interconnects. At elevated process temperatures, inter-diffusion of atomic species can occur among these metal layers, causing sub-optimal performance of interconnects, which may lead to the failure of an IC. Thus, typically a thin barrier metal layer is used to prevent the inter-diffusion of atomic species within interconnects. For ICs with sub-10 nm transistors (10 nm technology node), the design rule (thickness scaling) demands the thinnest possible barrier layer. Therefore, here we investigate the critical thickness of a titanium-nitride (TiN) barrier that can prevent the cobalt diffusion using multi-scale modeling and simulations. First, we compute the Co diffusion barrier in crystalline and amorphous TiN with the nudged elastic band method within first-principles density functional theory simulations. Later, using the calculated activation energy barriers, we quantify the Co diffusion length in the TiN metal layer with the help of kinetic Monte Carlo simulations. Such a multi-scale modelling approach yields an exact critical thickness of the metal layer sufficient to prevent the Co diffusion in IC interconnects. We obtain a diffusion length of a maximum of 2 nm for a typical process of thermal annealing at 400 °C for 30 min. Our study thus provides useful physical insights for the Co diffusion in the TiN layer and further quantifies the critical thickness (~2 nm) to which the metal barrier layer can be thinned down for sub-10 nm ICs.

Holmium hafnate: An emerging electronic device material

NASA Astrophysics Data System (ADS)

Pavunny, Shojan P.; Sharma, Yogesh; Kooriyattil, Sudheendran; Dugu, Sita; Katiyar, Rajesh K.; Scott, James F.; Katiyar, Ram S.

2015-03-01

We report structural, optical, charge transport, and temperature properties as well as the frequency dependence of the dielectric constant of Ho2Hf2O7 (HHO) which make this material desirable as an alternative high-k dielectric for future silicon technology devices. A high dielectric constant of ˜20 and very low dielectric loss of ˜0.1% are temperature and voltage independent at 100 kHz near ambient conditions. The Pt/HHO/Pt capacitor exhibits exceptionally low Schottky emission-based leakage currents. In combination with the large observed bandgap Eg of 5.6 eV, determined by diffuse reflectance spectroscopy, our results reveal fundamental physics and materials science of the HHO metal oxide and its potential application as a high-k dielectric for the next generation of complementary metal-oxide-semiconductor devices.

Dielectric response of a nondegenerate electron gas in semiconductor nanocrystallites

NASA Astrophysics Data System (ADS)

van Faassen, E.

1998-12-01

We investigate the low-frequency dielectric response of a dilute electron gas in a small spherical semiconductor particle. The flow of the electrons is described by hydrodynamic equations which incorporate the electrostatic interactions between the electrons in a self-consistent fashion. In the low-frequency regime, the dielectric loss is small and proportional to the frequency, despite substantial field penetration into the semiconductor. The loss remains small even for high doping levels due to effective cancellation between field-induced drift and diffusion. The model is used to estimate the complex dielectric constant of a system of weakly conducting nanosized semiconductor particles. The most prominent manifestation of spatial dispersion is that photoinduced changes in the real and imaginary parts of the dielectric constant are positive and of comparable magnitude.

CO Diffusion into Amorphous H2O Ices

NASA Astrophysics Data System (ADS)

Lauck, Trish; Karssemeijer, Leendertjan; Shulenberger, Katherine; Rajappan, Mahesh; Öberg, Karin I.; Cuppen, Herma M.

2015-03-01

The mobility of atoms, molecules, and radicals in icy grain mantles regulates ice restructuring, desorption, and chemistry in astrophysical environments. Interstellar ices are dominated by H2O, and diffusion on external and internal (pore) surfaces of H2O-rich ices is therefore a key process to constrain. This study aims to quantify the diffusion kinetics and barrier of the abundant ice constituent CO into H2O-dominated ices at low temperatures (15-23 K), by measuring the mixing rate of initially layered H2O(:CO2)/CO ices. The mixed fraction of CO as a function of time is determined by monitoring the shape of the infrared CO stretching band. Mixing is observed at all investigated temperatures on minute timescales and can be ascribed to CO diffusion in H2O ice pores. The diffusion coefficient and final mixed fraction depend on ice temperature, porosity, thickness, and composition. The experiments are analyzed by applying Fick’s diffusion equation under the assumption that mixing is due to CO diffusion into an immobile H2O ice. The extracted energy barrier for CO diffusion into amorphous H2O ice is ˜160 K. This is effectively a surface diffusion barrier. The derived barrier is low compared to current surface diffusion barriers in use in astrochemical models. Its adoption may significantly change the expected timescales for different ice processes in interstellar environments.

Ultraviolet-B radiation enhancement in dielectric barrier discharge based xenon chloride exciplex source by air

NASA Astrophysics Data System (ADS)

Gulati, P.; Prakash, R.; Pal, U. N.; Kumar, M.; Vyas, V.

2014-07-01

A single barrier dielectric barrier discharge tube of quartz with multi-strip Titanium-Gold (Ti-Au) coatings have been developed and utilized for ultraviolet-B (UV-B) radiation production peaking at wavelength 308 nm. The observed radiation at this wavelength has been examined for the mixtures of the Xenon together with chlorine and air admixtures. The gas mixture composition, chlorine gas content, total gas pressure, and air pressure dependency of the UV intensity, has been analyzed. It is found that the larger concentration of Cl2 deteriorates the performance of the developed source and around 2% Cl2 in this source produced optimum results. Furthermore, an addition of air in the xenon and chlorine working gas environment leads to achieve same intensity of UV-B light but at lower working gas pressure where significant amount of gas is air.

High-performance enhancement-mode Al2O3/InAlGaN/GaN MOS high-electron mobility transistors with a self-aligned gate recessing technology

NASA Astrophysics Data System (ADS)

Zhang, Kai; Kong, Cen; Zhou, Jianjun; Kong, Yuechan; Chen, Tangsheng

2017-02-01

The paper reports high-performance enhancement-mode MOS high-electron mobility transistors (MOS-HEMTs) based on a quaternary InAlGaN barrier. Self-aligned gate technology is used for gate recessing, dielectric deposition, and gate electrode formation. An improved digital recessing process is developed, and an Al2O3 gate dielectric grown with O2 plasma is used. Compared to results with AlGaN barrier, the fabricated E-mode MOS-HEMT with InAlGaN barrier delivers a record output current density of 1.7 A/mm with a threshold voltage (V TH) of 1.5 V, and a small on-resistance (R on) of 2.0 Ω·mm. Excellent V TH hysteresis and greatly improved gate leakage characteristics are also demonstrated.

Ultraviolet-B radiation enhancement in dielectric barrier discharge based xenon chloride exciplex source by air

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gulati, P., E-mail: pgulati1512@gmail.com; Department of Physics, Banasthali University, P.O. Banasthali Vidyapith, Rajasthan 304022; Prakash, R.

2014-07-07

A single barrier dielectric barrier discharge tube of quartz with multi-strip Titanium-Gold (Ti-Au) coatings have been developed and utilized for ultraviolet-B (UV-B) radiation production peaking at wavelength 308 nm. The observed radiation at this wavelength has been examined for the mixtures of the Xenon together with chlorine and air admixtures. The gas mixture composition, chlorine gas content, total gas pressure, and air pressure dependency of the UV intensity, has been analyzed. It is found that the larger concentration of Cl{sub 2} deteriorates the performance of the developed source and around 2% Cl{sub 2} in this source produced optimum results. Furthermore, anmore » addition of air in the xenon and chlorine working gas environment leads to achieve same intensity of UV-B light but at lower working gas pressure where significant amount of gas is air.« less

Reduction of diffusion barriers in isolated rat islets improves survival, but not insulin secretion or transplantation outcome

PubMed Central

Janette Williams, S; Huang, Han-Hung; Kover, Karen; Moore, Wayne; Berkland, Cory; Singh, Milind; Smirnova, Irina V; MacGregor, Ronal

2010-01-01

For people with type 1 diabetes and severe hypoglycemic unawareness, islet transplants offer hope for improving the quality of life. However, islet cell death occurs quickly during or after transplantation, requiring large quantities of islets per transplant. The purpose of this study was to determine whether poor function demonstrated in large islets was a result of diffusion barriers and if removing those barriers could improve function and transplantation outcomes. Islets were isolated from male DA rats and measured for cell viability, islet survival, glucose diffusion and insulin secretion. Modeling of diffusion barriers was completed using dynamic partial differential equations for a sphere. Core cell death occurred in 100% of the large islets (diameter >150 µm), resulting in poor survival within 7 days after isolation. In contrast, small islets (diameter <100 µm) exhibited good survival rates in culture (91%). Glucose diffusion into islets was tracked with 2-NBDG; 4.2 µm/min in small islets and 2.8 µm/min in large islets. 2-NBDG never permeated to the core cells of islets larger than 150 µm diameter. Reducing the diffusion barrier in large islets improved their immediate and long-term viability in culture. However, reduction of the diffusion barrier in large islets failed to improve their inferior in vitro insulin secretion compared to small islets, and did not return glucose control to diabetic animals following transplantation. Thus, diffusion barriers lead to low viability and poor survival for large islets, but are not solely responsible for the inferior insulin secretion or poor transplantation outcomes of large versus small islets. PMID:20885858

The Long and Viscous Road: Uncovering Nuclear Diffusion Barriers in Closed Mitosis

PubMed Central

Zavala, Eder; Marquez-Lago, Tatiana T.

2014-01-01

Diffusion barriers are effective means for constraining protein lateral exchange in cellular membranes. In Saccharomyces cerevisiae, they have been shown to sustain parental identity through asymmetric segregation of ageing factors during closed mitosis. Even though barriers have been extensively studied in the plasma membrane, their identity and organization within the nucleus remains poorly understood. Based on different lines of experimental evidence, we present a model of the composition and structural organization of a nuclear diffusion barrier during anaphase. By means of spatial stochastic simulations, we propose how specialised lipid domains, protein rings, and morphological changes of the nucleus may coordinate to restrict protein exchange between mother and daughter nuclear lobes. We explore distinct, plausible configurations of these diffusion barriers and offer testable predictions regarding their protein exclusion properties and the diffusion regimes they generate. Our model predicts that, while a specialised lipid domain and an immobile protein ring at the bud neck can compartmentalize the nucleus during early anaphase; a specialised lipid domain spanning the elongated bridge between lobes would be entirely sufficient during late anaphase. Our work shows how complex nuclear diffusion barriers in closed mitosis may arise from simple nanoscale biophysical interactions. PMID:25032937

Multiple current peaks in room-temperature atmospheric pressure homogenous dielectric barrier discharge plasma excited by high-voltage tunable nanosecond pulse in air

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, De-Zheng; Wang, Wen-Chun; Zhang, Shuai

2013-05-13

Room temperature homogenous dielectric barrier discharge plasma with high instantaneous energy efficiency is acquired by using nanosecond pulse voltage with 20-200 ns tunable pulse width. Increasing the voltage pulse width can lead to the generation of regular and stable multiple current peaks in each discharge sequence. When the voltage pulse width is 200 ns, more than 5 organized current peaks can be observed under 26 kV peak voltage. Investigation also shows that the organized multiple current peaks only appear in homogenous discharge mode. When the discharge is filament mode, organized multiple current peaks are replaced by chaotic filament current peaks.

Dielectric Measurements on Sol-Gel Derived Titania Films

NASA Astrophysics Data System (ADS)

Capan, Rifat; Ray, Asim K.

2017-11-01

Alternating current (AC) impedance measurements were performed on 37 nm thick nanostructured sol-gel derived anatase titania films on ultrasonically cleaned (100) p-silicon substrates at temperatures T ranging from 100 K to 300 K over a frequency range between 20 Hz and 1 MHz. The frequency-dependent behavior of the AC conductivity σ ac( f, T) obeys the universal power law, and the values of the effective hopping barrier and hopping distance were found to be 0.79 eV and 6.7 × 10-11 m from an analysis due to the correlated barrier-hopping model. The dielectric relaxation was identified as a thermally activated non-Debye process involving an activation energy of 41.5 meV.

Improving uniformity of atmospheric-pressure dielectric barrier discharges using dual frequency excitation

NASA Astrophysics Data System (ADS)

Liu, Y.; Peeters, F. J. J.; Starostin, S. A.; van de Sanden, M. C. M.; de Vries, H. W.

2018-01-01

This letter reports a novel approach to improve the uniformity of atmospheric-pressure dielectric barrier discharges using a dual-frequency excitation consisting of a low frequency (LF) at 200 kHz and a radio frequency (RF) at 13.56 MHz. It is shown that due to the periodic oscillation of the RF electric field, the electron acceleration and thus the gas ionization is temporally modulated, i.e. enhanced and suppressed during each RF cycle. As a result, the discharge development is slowed down with a lower amplitude and a longer duration of the LF discharge current. Hence, the RF electric field facilitates improved stability and uniformity simultaneously allowing a higher input power.

Generation of tunable plasma photonic crystals in meshed dielectric barrier discharge

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Yongjie; Dong, Lifang, E-mail: donglfhbu@163.com; Liu, Weibo

2014-07-15

Tunable superlattice plasma photonic crystals are obtained in a meshed dielectric barrier discharge. These plasma photonic crystals are composed of thin artificial lattices and thick self-organized lattices, and can be tuned easily by adjusting the applied voltage. A plasma photonic crystal with self-organized hexagonal lattice coupled to artificial square lattice is first realized. The dispersion relations of the square sublattices with different radii, which are recorded by an intensified charge-coupled device camera, are calculated. The results show that the thick square sublattice has the higher band edge frequencies and wider band widths. Band gaps of superlattice plasma photonic crystals aremore » actually temporal integrations of those of transient sublattices.« less

Dielectric studies on struvite urinary crystals, a gateway to the new treatment modality for urolithiasis

NASA Astrophysics Data System (ADS)

Rajan, Reshma; Raj, N. Arunai Nambi; Madeswaran, S.; Babu, D. Rajan

2015-09-01

Struvite or magnesium ammonium phosphate hexahydrate (MAPH) are biological crystals, found in the kidney, which are formed due to the infection caused by urea splitting bacteria in the urinary tract. The struvite crystals observe different morphologies and were developed using single diffusion gel growth technique. The crystalline nature and its composition were studied from different characterization techniques like X-ray Diffraction (XRD) and FTIR. The dielectric behavior of the developed crystal was studied by varying temperature and at different frequencies. The parameters like dielectric constant, dielectric loss, ac conductivity, ac resistivity, impedance and admittance of the struvite crystals were calculated. The studies proved that the dielectric loss or dissipation heat is high in lower frequencies at normal body temperature, which develops a plasma state in the stones and in turn leads to the disintegration of urinary stones. The dielectric nature of the stones leads to the dielectric therapy, which will be a gateway for future treatment modality for urolithiasis.

Sol-gel derived CaCu{sub 3}Ti{sub 4}O{sub 12} ceramics: Synthesis, characterization and electrical properties

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu Laijun; Fan Huiqing; Fang Pinyang

2008-07-01

The giant dielectric constant material CaCu{sub 3}Ti{sub 4}O{sub 12} (CCTO) has been synthesized by sol-gel method, for the first time, using nitrate and alkoxide precursor. The electrical properties of CCTO ceramics, showing an enormously large dielectric constant {epsilon} {approx} 60,000 (100 Hz at RT), were investigated in the temperature range from 298 to 358 K at 0, 5, 10, 20, and 40 V dc. The phases, microstructures, and impedance properties of final samples were characterized by X-ray diffraction, scanning electron microscopy, and precision impedance analyzer. The dielectric permittivity of CCTO synthesized by sol-gel method is at least three times ofmore » magnitude larger than that synthesized by other low-temperature method and solid-state reaction method. Furthermore, the results support the internal barrier layer capacitor (IBLC) model of Schottky barriers at grain boundaries between semiconducting grains.« less

First-principles study of transition-metal nitrides as diffusion barriers against Al

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mei, Zhi-Gang; Yacout, Abdellatif M.; Kim, Yeon Soo

2016-04-01

Using density-functional theory based first-principles calculations we provided a comparative study of the diffusion barrier properties of TiN, ZrN, and HfN against Al for U-Mo dispersion fuel applications. We firstly examined the thermodynamic stability of these transition-metal nitrides with Al. The calculated heats of reaction show that both TiN and ZrN are thermodynamically unstable diffusion barrier materials, which might be decomposed by Al at relatively high temperatures. As a comparison, HfN is a stable diffusion barrier material for Al. To evaluate the kinetic stability of these nitride systems against Al diffusion, we investigated the diffusion mechanisms of Al in TiN,more » ZrN and HfN using atomic scale simulations. The effect of non-stoichiometry on the defect formation and Al migration was systematically studied. (C) 2015 ELSEVIER B.V. All rights reserved« less

Nitrogen diffusion in hafnia and the impact of nitridation on oxygen and hydrogen diffusion: A first-principles study

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sathiyanarayanan, Rajesh, E-mail: rajessat@in.ibm.com, E-mail: rajesh.sathiyanarayanan@gmail.com; Pandey, R. K.; Murali, K. V. R. M.

2015-01-21

Using first-principles simulations, we have computed incorporation energies and diffusion barriers of ammonia, the nitrogen molecule and atomic nitrogen in monoclinic hafnia (m-HfO{sub 2}). Our calculations show that ammonia is likely to dissociate into an NH{sub 2} molecular unit, whereas the nitrogen molecule remains as a molecule either in the interstitial space or at an oxygen lattice site. The lowest energy pathway for the diffusion of atomic nitrogen interstitials consists of the hopping of the nitrogen interstitial between neighboring three-coordinated lattice oxygen atoms that share a single Hf atom, and the barrier for such hops is determined by a switchingmore » mechanism. The substitutional nitrogen atom shows a preference for diffusion through the doubly positive oxygen vacancy-mediated mechanism. Furthermore, we have investigated the impact of nitrogen atoms on the diffusion barriers of oxygen and hydrogen interstitials in m-HfO{sub 2}. Our results show that nitrogen incorporation has a significant impact on the barriers for oxygen and hydrogen diffusion: nitrogen atoms attract oxygen and hydrogen interstitials diffusing in the vicinity, thereby slowing down (reducing) their diffusion (diffusion length)« less

Enzyme localization, crowding, and buffers collectively modulate diffusion-influenced signal transduction: Insights from continuum diffusion modeling

PubMed Central

Kekenes-Huskey, Peter M.; Eun, Changsun; McCammon, J. A.

2015-01-01

Biochemical reaction networks consisting of coupled enzymes connect substrate signaling events with biological function. Substrates involved in these reactions can be strongly influenced by diffusion “barriers” arising from impenetrable cellular structures and macromolecules, as well as interactions with biomolecules, especially within crowded environments. For diffusion-influenced reactions, the spatial organization of diffusion barriers arising from intracellular structures, non-specific crowders, and specific-binders (buffers) strongly controls the temporal and spatial reaction kinetics. In this study, we use two prototypical biochemical reactions, a Goodwin oscillator, and a reaction with a periodic source/sink term to examine how a diffusion barrier that partitions substrates controls reaction behavior. Namely, we examine how conditions representative of a densely packed cytosol, including reduced accessible volume fraction, non-specific interactions, and buffers, impede diffusion over nanometer length-scales. We find that diffusion barriers can modulate the frequencies and amplitudes of coupled diffusion-influenced reaction networks, as well as give rise to “compartments” of decoupled reactant populations. These effects appear to be intensified in the presence of buffers localized to the diffusion barrier. These findings have strong implications for the role of the cellular environment in tuning the dynamics of signaling pathways. PMID:26342355

Dielectric Relaxation Behavior and AC Electrical Conductivity Study of 2-(1,2-Dihydro-7-Methyl-2-Oxoquinoline-5-yl) Malononitrile (DMOQMN)

NASA Astrophysics Data System (ADS)

El-Nahass, M. M.; El-Zaidia, E. F. M.; Darwish, A. A. A.; Salem, G. F.

2017-02-01

Dielectric relaxation and alternative current conductivity of a new organic compound 2-(1,2-dihydro-7-methyl-2-oxoquinoline-5-yl) malononitrile (DMOQMN) have been investigated. X-ray diffraction (XRD) at room temperature reveals that DMOQMN samples have a polycrystalline structure of the triclinic system. The analysis of the dielectric constant and dielectric loss index suggested the dominant polarization is performed and the Maxwell-Wagner-Sillar type polarization is dominating at low frequency and high temperature. These results have been confirmed by the XRD and dielectric modulus. The estimated relaxation time and the activation energy are 9 × 10-13 s and 0.43 eV, respectively. Our results indicated that the conduction mechanism of DMOQMN is controlled by the correlation barrier hopping (CBH) model.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Samant, Saumil P.; Grabowski, Christopher A.; Kisslinger, Kim

Emerging needs for fast charge/discharge yet high-power, lightweight, and flexible electronics requires the use of polymer-film-based solid-state capacitors with high energy densities. Fast charge/discharge rates of film capacitors on the order of microseconds are not achievable with slower charging conventional batteries, supercapacitors and related hybrid technologies. However, the current energy densities of polymer film capacitors fall short of rising demand, and could be significantly enhanced by increasing the breakdown strength (E BD) and dielectric permittivity (ε r) of the polymer films. Co-extruded two-homopolymer component multilayered films have demonstrated much promise in this regard showing higher E BD over that ofmore » component polymers. Multilayered films can also help incorporate functional features besides energy storage, such as enhanced optical, mechanical, thermal and barrier properties. In this work, we report accomplishing multilayer, multicomponent block copolymer dielectric films (BCDF) with soft-shear driven highly oriented self-assembled lamellar diblock copolymers (BCP) as a novel application of this important class of self-assembling materials. Results of a model PS-b-PMMA system show ~50% enhancement in E BD of self-assembled multilayer lamellar BCP films compared to unordered as-cast films, indicating that the breakdown is highly sensitive to the nanostructure of the BCP. The enhancement in E BD is attributed to the “barrier effect”, where the multiple interfaces between the lamellae block components act as barriers to the dielectric breakdown through the film. The increase in E BD corresponds to more than doubling the energy storage capacity using a straightforward directed self-assembly strategy. This approach opens a new nanomaterial paradigm for designing high energy density dielectric materials.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Samant, Saumil P.; Grabowski, Christopher A.; Kisslinger, Kim

Emerging needs for fast charge/discharge yet high-power, lightweight, and flexible electronics requires the use of polymer-film-based solid-state capacitors with high energy densities. Fast charge/discharge rates of film capacitors on the order of microseconds are not achievable with slower charging conventional batteries, supercapacitors and related hybrid technologies. However, the current energy densities of polymer film capacitors fall short of rising demand, and could be significantly enhanced by increasing the breakdown strength (E BD) and dielectric permittivity (ε r) of the polymer films. Co-extruded two-homopolymer component multilayered films have demonstrated much promise in this regard showing higher E BD over that ofmore » component polymers. Multilayered films can also help incorporate functional features besides energy storage, such as enhanced optical, mechanical, thermal and barrier properties. In this work, we report accomplishing multilayer, multicomponent block copolymer dielectric films (BCDF) with soft-shear driven highly oriented self-assembled lamellar diblock copolymers (BCP) as a novel application of this important class of self-assembling materials. Results of a model PS- b-PMMA system show ~50% enhancement in E BD of self-assembled multilayer lamellar BCP films compared to unordered as-cast films, indicating that the breakdown is highly sensitive to the nanostructure of the BCP. The enhancement in E BD is attributed to the “barrier effect”, where the multiple interfaces between the lamellae block components act as barriers to the dielectric breakdown through the film. The increase in E BD corresponds to more than doubling the energy storage capacity using a straightforward directed self-assembly strategy. Lastly, this approach opens a new nanomaterial paradigm for designing high energy density dielectric materials.« less

[Determination of electric field distribution in dielectric barrier surface glow discharge by spectroscopic method].

PubMed

Li, Xue-chen; Jia, Peng-ying; Liu, Zhi-hui; Li, Li-chun; Dong, Li-fang

2008-12-01

In the present paper, stable glow discharges were obtained in air at low pressure with a dielectric barrier surface discharge device. Light emission from the discharge was detected by photomultiplier tubes and the research results show that the light signal exhibited one discharge pulse per half cycle of the applied voltage. The light pulses were asymmetric between the positive half cycle and the negative one of the applied voltage. The images of the glow surface discharge were processed by Photoshop software and the results indicate that the emission intensity remained almost constant for different places with the same distance from the powered electrode, while the emission intensity decreased with the distance from the powered electrode increasing. In dielectric barrier discharge, net electric field is determined by the applied voltage and the wall charges accumulated on the dielectric layer during the discharge, and consequently, it is important to obtain information about the net electric field distribution. For this purpose, optical emission spectroscopy method was used. The distribution of the net electric field can be deduced from the intensity ratio of spectral line 391.4 nm emitted from the first negative system of N2+ (B 2sigma u+ -->X 2sigma g+) to 337.1 nm emitted from the second positive system of N2 (C 3IIu-B 3IIg). The research results show that the electric field near the powered electric field is higher than at the edge of the discharge. These experimental results are very important for numerical study and industrial application of the surface discharge.

Comparative Study on Graded-Barrier AlxGa1‑xN/AlN/GaN/Si Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistor by Using Ultrasonic Spray Pyrolysis Deposition Technique

NASA Astrophysics Data System (ADS)

Lee, Ching-Sung; Hsu, Wei-Chou; Huang, Yi-Ping; Liu, Han-Yin; Yang, Wen-Luh; Yang, Shen-Tin

2018-06-01

Comparative study on a novel Al2O3-dielectric graded-barrier (GB) AlxGa1‑xN/AlN/GaN/Si (x = 0.22 ∼ 0.3) metal-oxide-semiconductor heterostructure field-effect transistor (MOS-HFET) formed by using the ultrasonic spray pyrolysis deposition (USPD) technique has been made with respect to a conventional-barrier (CB) Al0.26Ga0.74N/AlN/GaN/Si MOS-HFET and the reference Schottky-gate HFET devices. The GB AlxGa1‑xN was devised to improve the interfacial quality and enhance the Schottky barrier height at the same time. A cost-effective ultrasonic spray pyrolysis deposition (USPD) method was used to form the high-k Al2O3 gate dielectric and surface passivation on the AlGaN barrier of the present MOS-HFETs. Comprehensive device performances, including maximum extrinsic transconductance (g m,max), maximum drain-source current density (I DS,max), gate-voltage swing (GVS) linearity, breakdown voltages, subthreshold swing (SS), on/off current ratio (I on /I off ), high frequencies, and power performance are investigated.

Interface control in BaTiO3 based supercapacitors

NASA Astrophysics Data System (ADS)

Maglione, Mario; Elissalde, Catherine; Chung, U.-Chan

2010-03-01

Core shell BaTiO3 based particles sintered using advanced processes provide a high control of grain boundaries in bulk composites. As a result, supercapacitor behavior was evidenced which came from the balance between inner grain conductivity and grain boundary dielectric barrier. Thanks to the core-shell structure of the starting particles, improved control of the effective dielectric parameters can be achieved.

An experimental study of atmospheric pressure dielectric barrier discharge (DBD) in argon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Subedi, D. P.; Tyata, R. B.; Shrestha, R.

2014-03-05

In this paper, experimental results on atmospheric pressure argon dielectric barrier discharge (DBD) have been presented. The discharge was generated using a high voltage (0 to 20 kV) power supply operating at frequency of 10 to 30 kHz and was studied by means of electrical and optical measurements. A homogeneous and steady discharge was observed between the electrodes with gap spacing from 1 mm to 3 mm and with a dielectric barrier of thickness 1.5 mm while argon gas is fed at a controlled flow rate of 2liter per min. The electron temperature (T{sub e}) and electron density (n{sub e})more » of the plasma have been determined by means of optical emission spectroscopy. Our results show that the electron density is of the order of 10{sup 16} cm{sup −3} while the electron temperature is estimated to be ∼ 1 eV. The homogeneity and non-thermal nature of the discharge were utilized in the investigation of the change in wettabilty of a polymer sample subjected to the treatment by the discharge. Contact angle analysis showed that the discharge was effective in improving the wettability of low density Polyethylene (LDPE) polymer sample after the treatment.« less

Aging and domain growth in K1-xLixTaO3 (x<=0.05)

NASA Astrophysics Data System (ADS)

Alberici-Kious, F.; Bouchaud, J.-P.; Cugliandolo, L. F.; Doussineau, P.; Levelut, A.

2000-12-01

We present experimental results on the dielectric constant in orientational glasses K1-xLixTaO3 (KLT) with x<=0.05, together with the detailed (analytic and numerical) study of a model which attributes the observed aging to the motion of the walls of polarization domains. We show that the dielectric constant after a positive temperature jump goes through a maximum as a function of the subsequent time. This observation and those previously reported (aging, cooling rate dependence, etc.) are compared with the predictions of the model, in which the variations of the dielectric constant are attributed to the change of polarization domain wall area. The total area decreases by domain growth and increases by nucleation of new small domains inside the larger ones. These two opposite variations are both hindered by static random fields (equivalent to energy barriers) due to the frozen dipoles borne by the off-center Li+ ions. Many results are well explained by the model with a single energy barrier. However, some effects can only be understood if a broad distribution of energy barriers is assumed. We use the experimental data to determine this distribution and find it to be unimodal with a width comparable to its most probable value.

Dielectric barrier discharge ionization for liquid chromatography/mass spectrometry.

PubMed

Hayen, Heiko; Michels, Antje; Franzke, Joachim

2009-12-15

An atmospheric pressure microplasma ionization source based on a dielectric barrier discharge with a helium plasma cone outside the electrode region has been developed for liquid chromatography/mass spectrometry (LC/MS). For this purpose, the plasma was realized in a commercial atmospheric pressure ionization source. Dielectric barrier discharge ionization (DBDI) was compared to conventional electrospray ionization (ESI), atmospheric pressure chemical ionization (APCI), and atmospheric pressure photoionization (APPI) in the positive ionization mode. Therefore, a heterogeneous compound library was investigated that covered polar compounds such as amino acids, water-soluble vitamins, and nonpolar compounds like polycyclic aromatic hydrocarbons and functionalized hydrocarbons. It turned out that DBDI can be regarded as a soft ionization technique characterized by only minor fragmentation similar to APCI. Mainly protonated molecules were detected. Additionally, molecular ions were observed for polycyclic aromatic hydrocarbons and derivatives thereof. During DBDI, adduct formation with acetonitrile occurred. For aromatic compounds, addition of one to four oxygen atoms and to a smaller extend one nitrogen and oxygen was observed which delivered insight into the complexity of the ionization processes. In general, compounds covering a wider range of polarities can be ionized by DBDI than by ESI. Furthermore, limits of detection compared to APCI are in most cases equal or even better.

Kinetic Monte Carlo Simulation of Oxygen Diffusion in Ytterbium Disilicate

NASA Technical Reports Server (NTRS)

Good, Brian S.

2015-01-01

Ytterbium disilicate is of interest as a potential environmental barrier coating for aerospace applications, notably for use in next generation jet turbine engines. In such applications, the transport of oxygen and water vapor through these coatings to the ceramic substrate is undesirable if high temperature oxidation is to be avoided. In an effort to understand the diffusion process in these materials, we have performed kinetic Monte Carlo simulations of vacancy-mediated and interstitial oxygen diffusion in Ytterbium disilicate. Oxygen vacancy and interstitial site energies, vacancy and interstitial formation energies, and migration barrier energies were computed using Density Functional Theory. We have found that, in the case of vacancy-mediated diffusion, many potential diffusion paths involve large barrier energies, but some paths have barrier energies smaller than one electron volt. However, computed vacancy formation energies suggest that the intrinsic vacancy concentration is small. In the case of interstitial diffusion, migration barrier energies are typically around one electron volt, but the interstitial defect formation energies are positive, with the result that the disilicate is unlikely to exhibit experience significant oxygen permeability except at very high temperature.

Transmission of isotropic light across a dielectric surface in two and three dimensions.

NASA Technical Reports Server (NTRS)

Allen, W. A.

1973-01-01

Average transmittance of polarized diffuse light across a dielectric surface is calculated in both two and three dimensions. The incident light in both cases is confined to an angular range measured from the surface normal. Limiting values in three dimensions correspond to known results for two cases, (1) normal incidence, and (2) diffuse light incident from a 180 deg cone. The two-dimensional formulation is solvable in terms of elliptic functions and incomplete elliptic integrals of the first, second, and third kinds. Results are displayed graphically for values of transmittances in excess of 0.9 associated with relative indices of refraction in the range m = 1.0 to m = 2.6.

AC conductivity and dielectric properties of bulk tungsten trioxide (WO3)

NASA Astrophysics Data System (ADS)

El-Nahass, M. M.; Ali, H. A. M.; Saadeldin, M.; Zaghllol, M.

2012-11-01

AC conductivity and dielectric properties of tungsten trioxide (WO3) in a pellet form were studied in the frequency range from 42 Hz to 5 MHz with a variation of temperature in the range from 303 K to 463 K. AC conductivity, σac(ω) was found to be a function of ωs where ω is the angular frequency and s is the frequency exponent. The values of s were found to be less than unity and decrease with increasing temperature, which supports the correlated barrier hopping mechanism (CBH) as the dominant mechanism for the conduction in WO3. The dielectric constant (ε‧) and dielectric loss (ε″) were measured. The Cole-Cole diagram determined complex impedance for different temperatures.

Dielectric Properties of Tungsten Copper Barium Ceramic as Promising Colossal-Permittivity Material

NASA Astrophysics Data System (ADS)

Wang, Juanjuan; Chao, Xiaolian; Li, Guangzhao; Feng, Lajun; Zhao, Kang; Ning, Tiantian

2017-08-01

Ba(Cu0.5W0.5)O3 (BCW) ceramic has been fabricated and its dielectric properties investigated for use in energy-storage applications, revealing a very large dielectric constant (˜104) at 1 kHz. Moreover, the colossal-permittivity BCW ceramic exhibited fine microstructure and optimal temperature stability over a wide temperature range from room temperature to 500°C. The internal barrier layer capacitor mechanism was considered to be responsible for its high dielectric properties. Based on activation values, it is concluded that doubly ionized oxygen vacancies make a substantial contribution to the conduction and relaxation behaviors at grain boundaries. This study suggests that this kind of material has potential for use in high-density energy storage applications.

Low temperature sintered giant dielectric permittivity CaCu3Ti4O12 sol-gel synthesized nanoparticle capacitors

NASA Astrophysics Data System (ADS)

Puli, Venkata Sreenivas; Adireddy, Shiva; Kothakonda, Manish; Elupula, Ravinder; Chrisey, Douglas B.

This paper reports on synthesis of polycrystalline complex perovskite CaCu3Ti4O12 (as CCTO) ceramic powders prepared by a sol-gel auto combustion method at different sintering temperatures and sintering times, respectively. The effect of sintering time on the structure, morphology, dielectric and electrical properties of CCTO ceramics is investigated. Tuning the electrical properties via different sintering times is demonstrated for ceramic samples. X-ray diffraction (XRD) studies confirm perovskite-like structure at room temperature. Abnormal grain growth is observed for ceramic samples. Giant dielectric permittivity was realized for CCTO ceramics. High dielectric permittivity was attributed to the internal barrier layer capacitance (IBLC) model associated with the Maxwell-Wagner (MW) polarization mechanism.

Unexpected significant increase in bulk conductivity of a dielectric arising from charge injection

NASA Astrophysics Data System (ADS)

Wang, Jian-Jun; Bayer, Thorsten J. M.; Wang, Rui; Carter, Jared J.; Randall, Clive A.; Chen, Long-Qing

2017-06-01

Charge injection is a common phenomenon in heterostructures or devices containing metal-insulator interfaces under a voltage bias ranging from dielectric capacitors to electroluminescent and lasing devices. It is generally believed that charge injection only significantly increases the conductivity near the interfacial region or in capacitors with very thin dielectric layers. In this work, the impact of charge injection on bulk conductivity of a 0.5 mm thick Fe-doped SrTiO3 single crystal is investigated with a combination of experimental impedance measurements and computational modelling. It is found that the interfacial charge injection may increase the predicted bulk conductivity of a dielectric by more than one order of magnitude as a consequence of Schottky barrier height lowering.

Electrical properties of nano-resistors made from the Zr-doped HfO2 high-k dielectric film

NASA Astrophysics Data System (ADS)

Zhang, Shumao; Kuo, Yue

2018-03-01

Electrical properties of nano-sized resistors made from the breakdown of the metal-oxide-semiconductor capacitor composed of the amorphous high-k gate dielectric have been investigated under different stress voltages and temperatures. The effective resistance of nano-resistors in the device was estimated from the I-V curve in the high voltage range. It decreased with the increase of the number of resistors. The resistance showed complicated temperature dependence, i.e. it neither behaves like a conductor nor a semiconductor. In the low voltage operation range, the charge transfer was controlled by the Schottky barrier at the nano-resistor/Si interface. The barrier height decreased with the increase of stress voltage, which was probably caused by the change of the nano-resistor composition. Separately, it was observed that the barrier height was dependent on the temperature, which was probably due to the dynamic nano-resistor formation process and the inhomogeneous barrier height distribution. The unique electrical characteristics of this new type of nano-resistors are important for many electronic and optoelectronic applications.

2D Thermoluminescence imaging of dielectric surface long term charge memory of plasma surface interaction in DBD discharges

NASA Astrophysics Data System (ADS)

Ambrico, Paolo F.; Ambrico, Marianna; Schiavulli, Luigi; De Benedictis, Santolo

2014-07-01

The charge trapping effect due to the exposure of alumina surfaces to plasma has been studied in a volume dielectric barrier discharge (DBD) in Ar and He noble gases. The long lasting charge trapping of alumina dielectric plates, used as barriers in DBDs, is evidenced by an ex situ thermoluminescence (TL) experiment performed with a standard and a custom two-dimensional (2D)-TL apparatus. The spatial density of trapped surface charges is found to be strongly correlated to the plasma morphology, and the surface spatial memory lasted for several minutes to hours after plasma exposure. In the case of Ar, the plasma channel impact signature on the surface shows a higher equivalent radiation dose with respect to the surface plasma wave and the post-discharge species signature. As a consequence, for the development of discharges, inside the dielectric surface the availability of lower energy trapped electrons is larger in the first region of plasma impact. The reported spatial memory increases the likelihood of the occurrence of plasma filaments in the same position in different runs. In He plasmas, the dielectric barrier shows an almost uniform distribution of trapped charges, meaning that there is no preferred region for the development of the discharge. In all cases a slight asymmetry was shown in the direction of the gas flow. This can be interpreted as being due to the long-living species moving in the direction of the gas flow, corresponding with the TL side experiment on the sample exposed to the plasma afterglow. The maximum values and the integral of the 2D-TL images showed a linear relation with the total charge per ac cycle, corresponding with findings for the TL glow curve. In conclusion, 2D-TL images allow the retrieval of information regarding the plasma surface interaction such as the plasma morphology, trap sites and their activation temperature.

Study of diffusion coefficient of anhydrous trehalose glasses by using PFG-NMR spectroscopy

NASA Astrophysics Data System (ADS)

Kwon, Hyun-Joung; Takekawa, Reiji; Kawamura, Junichi; Tokuyama, Michio

2013-02-01

We investigated the temperature dependent long time self-diffusion coefficient of the anhydrous trehalose supercooled liquids by using pulsed field gradient nuclear magnetic resonance (PFG-NMR) spectroscopy. At the same temperature ranges, the diffusion coefficient convoluted from the α-relaxation time as Einstein-Smoluchowski relaxation, measured by using the dielectric loss spectroscopy are well overlapped with diffusion coefficients within experimental error. The temperature dependent diffusion coefficients obtained from different methods are normalized by fictive temperature and well satisfied the single master curve, proposed by Tokuyama.

Study of dielectric relaxation and AC conductivity of InP:S single crystal

NASA Astrophysics Data System (ADS)

El-Nahass, M. M.; Ali, H. A. M.; El-Shazly, E. A.

2012-07-01

The dielectric relaxation and AC conductivity of InP:S single crystal were studied in the frequency range from 100 to 5.25 × 105 Hz and in the temperature range from 296 to 455 K. The dependence of the dielectric constant (ɛ1) and the dielectric loss (ɛ2) on both frequency and temperature was investigated. Since no peak was observed on the dielectric loss, we used a method based on the electric modulus to evaluate the activation energy of the dielectric relaxation. Scaling of the electric modulus spectra showed that the charge transport dynamics is independent of temperature. The AC conductivity (σAC) was found to obey the power law: Aωs. Analysis of the AC conductivity data and the frequency exponent showed that the correlated barrier hopping (CBH) model is the dominant mechanism for the AC conduction. The variation of AC conductivity with temperature at different frequencies showed that σAC is a thermally activated process.

Giant dielectric response in (Sr, Sb) codoped CaCu3Ti4O12 ceramics: A novel approach

NASA Astrophysics Data System (ADS)

Pradhan, M. K.; Rao, T. Lakshmana; Karna, Lipsarani; Dash, S.

2018-04-01

The CaCu3Ti4O12 (CCTO) remains as the best material for practical applications due to its high dielectric constant. To improve further the dielectric properties of CCTO to several orders in magnitude, a novel approach is adopted by codoping of Sr, Sb ions. The ceramic samples were fabricated by the conventional solid state route. The structure, morphology and detail dielectric properties were investigated systematically. All the samples crystalizes in a cubic symmetry with Im-3 space group. Sr substituted in Ca site can effectively suppress the grain growth, achieving a fine grained ceramic structure; however the grain size decreased slightly as Sb concentration increased further; whereas the dielectric permittivity of the ceramics increased drastically. The giant dielectric response was considered to be closely related with a reduction in the potential barrier height at grain boundaries (GBs) supported by the reduction in the activation energy for the conduction process.

Effect of DC bias on dielectric properties of nanocrystalline CuAlO2

NASA Astrophysics Data System (ADS)

Prakash, T.; Ramasamy, S.; Murty, B. S.

2013-03-01

Grain boundary effect on the room temperature dielectric behavior in mechanically alloyed nanocrystalline CuAlO2 has been investigated using impedance spectroscopy under the applied DC bias voltages 0 V to 4.8 V in a periodic interval of 0.2 V. Analysis of impedance data confirms the existence of double Schottky potential barrier heights ( Φ b ) between two adjacent grains (left and right side) with grain boundary and its influences in dielectric relaxation time ( τ), dielectric constant ( ɛ') and dielectric loss (tan δ) factor. Also, clear evidence on the suppression of Φ b was demonstrated in the higher applied bias voltages with the parameter τ. At equilibrium state, τ is 0.63 ms and it was reduced to 0.13 ms after the 3.2 V applied DC bias. These observed DC bias voltage effects are obeying `brick layer model' and also elucidates Φ b is playing a crucial role in controlling dielectric properties of nanomaterials.

Review of Graphene as a Solid State Diffusion Barrier.

PubMed

Morrow, Wayne K; Pearton, Stephen J; Ren, Fan

2016-01-06

Conventional thin-film diffusion barriers consist of 3D bulk films with high chemical and thermal stability. The purpose of the barrier material is to prevent intermixing or penetration from the two materials that encase it. Adhesion to both top and bottom materials is critical to the success of the barrier. Here, the effectiveness of a single atomic layer of graphene as a solid-state diffusion barrier for common metal schemes used in microelectronics is reviewed, and specific examples are discussed. Initial studies of electrical contacts to graphene show a distinct separation in behavior between metallic groups that strongly or weakly bond to it. The two basic classes of metal reactions with graphene are either physisorbed metals, which bond weakly with graphene, or chemisorbed metals, which bond strongly to graphene. For graphene diffusion barrier testing on Si substrates, an effective barrier can be achieved through the formation of a carbide layer with metals that are chemisorbed. For physisorbed metals, the barrier failure mechanism is loss of adhesion at the metal–graphene interface. A graphene layer encased between two metal layers, in certain cases, can increase the binding energy of both films with graphene, however, certain combinations of metal films are detrimental to the bonding with graphene. While the prospects for graphene's future as a solid-state diffusion barrier are positive, there are open questions, and areas for future research are discussed. A better understanding of the mechanisms which influence graphene's ability to be an effective diffusion barrier in microelectronic applications is required, and additional experiments are needed on a broader range of metals, as well as common metal stack contact structures used in microelectronic applications. The role of defects in the graphene is also a key area, since they will probably influence the barrier properties. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Dielectric barrier discharge plasma pretreatment on hydrolysis of microcrystalline cellulose

NASA Astrophysics Data System (ADS)

Huang, Fangmin; Long, Zhouyang; Liu, Sa; Qin, Zhenglong

2017-04-01

Dielectric barrier discharge (DBD) plasma was used as a pretreatment method for downstream hydrolysis of microcrystalline cellulose (MCC). The degree of polymerization (DP) of MCC decreased after it was pretreated by DBD plasma under a carrier gas of air/argon. The effectiveness of depolymerization was found to be influenced by the crystallinity of MCC when under the pretreatment of DBD plasma. With the addition of tert-butyl alcohol in the treated MCC water suspension solution, depolymerization effectiveness of MCC was inhibited. When MCC was pretreated by DBD plasma for 30 min, the total reducing sugar concentration (TRSC) and liquefaction yield (LY) of pretreated-MCC (PMCC) increased by 82.98% and 34.18% respectively compared with those for raw MCC.

Simulation Tool for Dielectric Barrier Discharge Plasma Actuators

NASA Technical Reports Server (NTRS)

Likhanskii, Alexander

2014-01-01

Traditional approaches for active flow separation control using dielectric barrier discharge (DBD) plasma actuators are limited to relatively low speed flows and atmospheric conditions. This results in low feasibility of the DBDs for aerospace applications. For active flow control at turbine blades, fixed wings, and rotary wings and on hypersonic vehicles, DBD plasma actuators must perform at a wide range of conditions, including rarified flows and combustion mixtures. An efficient, comprehensive, physically based DBD simulation tool can optimize DBD plasma actuators for different operation conditions. Researchers are developing a DBD plasma actuator simulation tool for a wide range of ambient gas pressures. The tool will treat DBD using either kinetic, fluid, or hybrid models, depending on the DBD operational condition.

Pattern formation based on complex coupling mechanism in dielectric barrier discharge

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Weibo; College of Aeronautical Engineering, Binzhou University, Binzhou 256603; Dong, Lifang, E-mail: donglfhbu@163.com, E-mail: pyy1616@163.com

2016-08-15

The pattern formation of cinque-dice square superlattice pattern (CDSSP) is investigated based on the complex coupling mechanism in a dielectric barrier discharge (DBD) system. The spatio-temporal structure of CDSSP obtained by using an intensified-charge coupled device indicates that CDSSP is an interleaving of two kinds of subpatterns (mixture of rectangle and square, and dot-line square) which discharge twice in one half voltage, respectively. Selected by the complex coupling of two subpatterns, the CDSSP can be formed and shows good stability. This investigation based on gas discharge theory together with nonlinear theory may provide a deeper understanding for the nonlinear characteristicsmore » and even the formation mechanism of patterns in DBD.« less

Characterization of millimetre magnitude atmospheric pressure streamer discharge in pin-to-plane dielectric barrier discharge

NASA Astrophysics Data System (ADS)

Xu, S. J.; Zhang, Y. H.; Yu, Z.; Yao, J.; Zhang, Z. T.

2013-03-01

The streamer regime of pin-to-plane dielectric barrier discharge in air was studied by means of fast photography, electrical measurement and photoelectricity. The fast photographs of positive streamer were obtained by CCD camera with micro lens. The exposure time is one microseconds. The images illustrate that the streamer is non-axisymmetric because of some random factors, such as surface charge position, space charge distribution, gas liquidity and so on. In fact, the streamer propagates along bend discharge channel. The bending degree increases with the electric field strengthen. By surveying a mass of images, the diameter of streamer, height of surface charge effect and scope of surface charge was estimate used to describe the shape of streamer.

Development of Compact Ozonizer with High Ozone Output by Pulsed Power

NASA Astrophysics Data System (ADS)

Tanaka, Fumiaki; Ueda, Satoru; Kouno, Kanako; Sakugawa, Takashi; Akiyama, Hidenori; Kinoshita, Youhei

Conventional ozonizer with a high ozone output using silent or surface discharges needs a cooling system and a dielectric barrier, and therefore becomes a large machine. A compact ozonizer without the cooling system and the dielectric barrier has been developed by using a pulsed power generated discharge. The wire to plane electrodes made of metal have been used. However, the ozone output was low. Here, a compact and high repetition rate pulsed power generator is used as an electric source of a compact ozonizer. The ozone output of 6.1 g/h and the ozone yield of 86 g/kWh are achieved at 500 pulses per second, input average power of 280 W and an air flow rate of 20 L/min.

Uniform and non-uniform modes of nanosecond-pulsed dielectric barrier discharge in atmospheric air: fast imaging and spectroscopic measurements of electric field

PubMed Central

Liu, Chong; Dobrynin, Danil; Fridman, Alexander

2014-01-01

In this study, we report experimental results on fast ICCD imaging of development of nanosecond-pulsed dielectric barrier discharge (DBD) in atmospheric air and spectroscopic measurements of electric field in the discharge. Uniformity of the discharge images obtained with nanosecond exposure times were analyzed using chi-square test. The results indicate that DBD uniformity strongly depends on applied (global) electric field in the discharge gap, and is a threshold phenomenon. We show that in the case of strong overvoltage on the discharge gap (provided by fast rise times), there is transition from filamentary to uniform DBD mode which correlates to the corresponding decrease of maximum local electric field in the discharge. PMID:25071294

Recent developments in large-scale ozone generation with dielectric barrier discharges

NASA Astrophysics Data System (ADS)

Lopez, Jose L.

2014-10-01

Large-scale ozone generation for industrial applications has been entirely based on the creation of microplasmas or microdischarges created using dielectric barrier discharge (DBD) reactors. Although versions of DBD generated ozone have been in continuous use for over a hundred years especially in water treatment, recent changes in environmental awareness and sustainability have lead to a surge of ozone generating facilities throughout the world. As a result of this enhanced global usage of this environmental cleaning application various new discoveries have emerged in the science and technology of ozone generation. This presentation will describe some of the most recent breakthrough developments in large-scale ozone generation while further addressing some of the current scientific and engineering challenges of this technology.

Uniform and non-uniform modes of nanosecond-pulsed dielectric barrier discharge in atmospheric air: fast imaging and spectroscopic measurements of electric field.

PubMed

Liu, Chong; Dobrynin, Danil; Fridman, Alexander

2014-06-25

In this study, we report experimental results on fast ICCD imaging of development of nanosecond-pulsed dielectric barrier discharge (DBD) in atmospheric air and spectroscopic measurements of electric field in the discharge. Uniformity of the discharge images obtained with nanosecond exposure times were analyzed using chi-square test. The results indicate that DBD uniformity strongly depends on applied (global) electric field in the discharge gap, and is a threshold phenomenon. We show that in the case of strong overvoltage on the discharge gap (provided by fast rise times), there is transition from filamentary to uniform DBD mode which correlates to the corresponding decrease of maximum local electric field in the discharge.

Layered CU-based electrode for high-dielectric constant oxide thin film-based devices

DOEpatents

Auciello, Orlando

2010-05-11

A layered device including a substrate; an adhering layer thereon. An electrical conducting layer such as copper is deposited on the adhering layer and then a barrier layer of an amorphous oxide of TiAl followed by a high dielectric layer are deposited to form one or more of an electrical device such as a capacitor or a transistor or MEMS and/or a magnetic device.

Dielectric relaxation of ethylene carbonate and propylene carbonate from molecular dynamics simulations

DOE PAGES

Chaudhari, Mangesh I.; You, Xinli; Pratt, Lawrence R.; ...

2015-11-24

Ethylene carbonate (EC) and propylene carbonate (PC) are widely used solvents in lithium (Li)-ion batteries and supercapacitors. Ion dissolution and diffusion in those media are correlated with solvent dielectric responses. Here, we use all-atom molecular dynamics simulations of the pure solvents to calculate dielectric constants and relaxation times, and molecular mobilities. The computed results are compared with limited available experiments to assist more exhaustive studies of these important characteristics. As a result, the observed agreement is encouraging and provides guidance for further validation of force-field simulation models for EC and PC solvents.

Dielectric and impedance spectral characteristics of bulk ZnIn2Se4

NASA Astrophysics Data System (ADS)

El-Nahass, M. M.; Attia, A. A.; Salem, G. F.; Ali, H. A. M.; Ismail, M. I.

2014-02-01

The frequency and temperature dependence of ac conductivity, dielectric constant and dielectric loss of ZnIn2Se4 in a pellet form were investigated in the frequency range of 102-106 Hz and temperature range of 293-356 K. The behavior of ac conductivity was interpreted by the correlated barrier hopping (CBH) model. Temperature dependence of ac conductivity indicates that ac conduction is a thermally activated process. The density of localized states N(EF) and ac activation energy were estimated for various frequencies. Dielectric constant and dielectric loss showed a decrease with increasing frequency and an increase with increasing in temperature. The frequency dependence of real and imaginary parts of the complex impedance was investigated. The relaxation time decreases with the increase in temperature. The impedance spectrum exhibits the appearance of the single semicircular arc. The radius of semicircular arcs decreases with increasing temperature which suggests a mechanism of temperature-dependent on relaxation.

Acceleration of metal-atom diffusion in electric field at metal/insulator interfaces: First-principles study

NASA Astrophysics Data System (ADS)

Nagasawa, Riki; Asayama, Yoshihiro; Nakayama, Takashi

2018-04-01

Metal-atom diffusion from metal electrodes into SiO2 in electric fields was studied using first-principles calculations. It was shown in the case without electric field that the diffusion barrier of a metal atom is mainly made of the cohesive energy of bulk metal layers, while the shape of the diffusion potential reflects the hybridization of the metal-atom state with metal-induced gap states (MIGSs) and the electron transfer between the metal atom and the electrode. We found that the metal-atom diffusion is markedly accelerated by the applied electric field, such that the diffusion barrier ϕB(E) decreases almost linearly with increasing electric field strength E. By analyzing the physical origins of the metal-atom diffusion, we derived the universal formula to estimate the diffusion barrier in the electric field, which is closely related to MIGSs.

Protective coatings for sensitive materials

DOEpatents

Egert, Charles M.

1997-01-01

An enhanced protective coating to prevent interaction between constituents of the environment and devices that can be damaged by those constituents. This coating is provided by applying a synergistic combination of diffusion barrier and physical barrier materials. These materials can be, for example, in the form of a plurality of layers of a diffusion barrier and a physical barrier, with these barrier layers being alternated. Further protection in certain instances is provided by including at least one layer of a getter material to actually react with one or more of the deleterious constituents. The coating is illustrated by using alternating layers of an organic coating (such as Parylene-C.TM.) as the diffusion barrier, and a metal coating (such as aluminum) as the physical barrier. For best results there needs to be more than one of at least one of the constituent layers.

A novel method for calculating the energy barriers for carbon diffusion in ferrite under heterogeneous stress

NASA Astrophysics Data System (ADS)

Tchitchekova, Deyana S.; Morthomas, Julien; Ribeiro, Fabienne; Ducher, Roland; Perez, Michel

2014-07-01

A novel method for accurate and efficient evaluation of the change in energy barriers for carbon diffusion in ferrite under heterogeneous stress is introduced. This method, called Linear Combination of Stress States, is based on the knowledge of the effects of simple stresses (uniaxial or shear) on these diffusion barriers. Then, it is assumed that the change in energy barriers under a complex stress can be expressed as a linear combination of these already known simple stress effects. The modifications of energy barriers by either uniaxial traction/compression and shear stress are determined by means of atomistic simulations with the Climbing Image-Nudge Elastic Band method and are stored as a set of functions. The results of this method are compared to the predictions of anisotropic elasticity theory. It is shown that, linear anisotropic elasticity fails to predict the correct energy barrier variation with stress (especially with shear stress) whereas the proposed method provides correct energy barrier variation for stresses up to ˜3 GPa. This study provides a basis for the development of multiscale models of diffusion under non-uniform stress.

A novel method for calculating the energy barriers for carbon diffusion in ferrite under heterogeneous stress.

PubMed

Tchitchekova, Deyana S; Morthomas, Julien; Ribeiro, Fabienne; Ducher, Roland; Perez, Michel

2014-07-21

A novel method for accurate and efficient evaluation of the change in energy barriers for carbon diffusion in ferrite under heterogeneous stress is introduced. This method, called Linear Combination of Stress States, is based on the knowledge of the effects of simple stresses (uniaxial or shear) on these diffusion barriers. Then, it is assumed that the change in energy barriers under a complex stress can be expressed as a linear combination of these already known simple stress effects. The modifications of energy barriers by either uniaxial traction/compression and shear stress are determined by means of atomistic simulations with the Climbing Image-Nudge Elastic Band method and are stored as a set of functions. The results of this method are compared to the predictions of anisotropic elasticity theory. It is shown that, linear anisotropic elasticity fails to predict the correct energy barrier variation with stress (especially with shear stress) whereas the proposed method provides correct energy barrier variation for stresses up to ∼3 GPa. This study provides a basis for the development of multiscale models of diffusion under non-uniform stress.

Origins and implications of the ordering of oxygen vacancies and localized electrons on partially reduced CeO 2(111)

DOE PAGES

Sutton, Jonathan E.; Beste, Ariana; Steven H. Overbury

2015-10-12

In this study, we use density functional theory to explain the preferred structure of partially reduced CeO 2(111). Low-energy ordered structures are formed when the vacancies are isolated (maximized intervacancy separation) and the size of the Ce 3+ ions is minimized. Both conditions help minimize disruptions to the lattice around the vacancy. The stability of the ordered structures suggests that isolated vacancies are adequate for modeling more complex (e.g., catalytic) systems. Oxygen diffusion barriers are predicted to be low enough that O diffusion between vacancies is thermodynamically controlled at room temperature. The O-diffusion-reaction energies and barriers are decreased when onemore » Ce f electron hops from a nearest-neighbor Ce cation to a next-nearest-neighbor Ce cation, with a barrier that has been estimated to be slightly less than the barrier to O diffusion in the absence of polaron hopping. In conculsion, this indicates that polaron hopping plays a key role in facilitating the overall O diffusion process, and depending on the relative magnitudes of the polaron hopping and O diffusion barriers, polaron hopping may be the kinetically limiting process.« less

Axial diffusion barriers in near-infrared nanopillar LEDs.

PubMed

Scofield, Adam C; Lin, Andrew; Haddad, Michael; Huffaker, Diana L

2014-11-12

The growth of GaAs/GaAsP axial heterostructures is demonstrated and implemented as diffusion current barriers in nanopillar light-emitting diodes at near-infrared wavelengths. The nanopillar light-emitting diodes utilize an n-GaAs/i-InGaAs/p-GaAs axial heterostructure for current injection. Axial GaAsP segments are inserted into the n- and p-GaAs portions of the nanopillars surrounding the InGaAs emitter region, acting as diffusion barriers to provide enhanced carrier confinement. Detailed characterization of growth of the GaAsP inserts and electronic band-offset measurements are used to effectively implement the GaAsP inserts as diffusion barriers. The implementation of these barriers in nanopillar light-emitting diodes provides a 5-fold increase in output intensity, making this a promising approach to high-efficiency pillar-based emitters in the near-infrared wavelength range.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mahesh, P., E-mail: pamu@iitg.ernet.in; Subhash, T., E-mail: pamu@iitg.ernet.in; Pamu, D., E-mail: pamu@iitg.ernet.in

We report the dielectric properties of (K{sub 0.5}Na{sub 0.5})NbO{sub 3} ceramics doped with x wt% of Dy{sub 2}O{sub 3} (x= 0.0-1.5 wt%) using the broadband dielectric spectroscopy. The X-ray diffraction studies showed the formation of perovskite structure signifying that Dy{sub 2}O{sub 3} diffuse into the KNN lattice. Samples doped with x > 0.5 wt% exhibit smaller grain size and lower relative densities. The dielectric properties of KNN ceramics doped with Dy{sub 2}O{sub 3} are enhanced by increasing the Dy{sup 3+} content; among the compositions studied, x = 0.5 wt% exhibited the highest dielectric constant and lowest loss at 1MHz overmore » the temperature range of 30°C to 400°C. All the samples exhibit maximum dielectric constant at the Curie temperature (∼ 326°C) and a small peak in the dielectric constant at around 165°C is due to a structural phase transition.« less

Systematic investigation of the barrier discharge operation in helium, nitrogen, and mixtures: discharge development, formation and decay of surface charges

NASA Astrophysics Data System (ADS)

Tschiersch, R.; Bogaczyk, M.; Wagner, H.-E.

2014-09-01

As a logical extension to previous investigations of the barrier discharge (BD) in helium and nitrogen, the present work reports on the operation in any mixtures of both pure gases. Using a well-established plane-parallel discharge cell configuration allows to study the influence of the He/N2 mixing ratio on the formation of different discharge modes. Their characterization was made by measuring the discharge emission development together with the formation and decay of surface charges on a bismuth silicon oxide (Bi12SiO20, BSO) crystal. This was realized by the simultaneous application of the spatio-temporally resolved optical emission spectroscopy, and the electro-optic Pockels effect in combination with a CCD high speed camera. The existence diagram for diffuse and filamentary BDs was determined by varying the amplitude and shape of the applied voltage. Over the entire range of the He/N2 ratio, the diffuse mode can be operated at moderate voltage amplitudes whereas filamentation occurs at significant overvoltage and is favoured by a high voltage slew rate. Irrespective of the discharge mode, the overall charge transfer during a discharge breakdown is found to be in excellent agreement with the amount of accumulated surface charges. An exponential decay of the surface charge deposited on the BSO crystal is induced by LED illumination beyond a typical discharge cycle. During the decay process, a broadening of the radial profiles of positive as well as negative surface charge spots originating from previous microdischarges is observed. The investigations contribute to a better understanding of the charge accumulation at a dielectric.

Lead free dielectric ceramic with stable relative permittivity of 0.90(Na0.50Bi0.50Ti)O3-0.10AgNbO3

NASA Astrophysics Data System (ADS)

Verma, Anita; Yadav, Arun Kumar; Kumar, Sunil; Sen, Somaditya

2018-04-01

Structural, dielectric and ferroelectric properties in perovskite 0.90(Na0.50Bi0.50Ti)03-0.10AgNb03 polycrystalline powders prepared by sol-gel method are discussed. Diffuse phase transition and new type of dielectric anomaly was observed with highly steady capacitive properties in the 135-450 °C temperature range. This compound shows remarkable dielectric with dielectric constant ɛr 1000 with a variation of ± 7% and tan δ = 0.004 0.25 in 135- 450 °C temperature. In addition, it also showed excellent ferroelectric properties with saturation polarization Ps = 13.5 μC/cm2, remnant polarization of Pr = 7.6 μC/cm2 and a low coercive field Ec = 36 kV/cm at room temperature. Stable dielectric constant (ɛr) and low dielectric loss (tan δ) in a wide temperature range observed for the titled composition makes it an interesting candidate for potential use in fast growing "high-temperature electronics" industry applications.

Directed Self-Assembly of Block Copolymers for High Breakdown Strength Polymer Film Capacitors.

PubMed

Samant, Saumil P; Grabowski, Christopher A; Kisslinger, Kim; Yager, Kevin G; Yuan, Guangcui; Satija, Sushil K; Durstock, Michael F; Raghavan, Dharmaraj; Karim, Alamgir

2016-03-01

Emerging needs for fast charge/discharge yet high-power, lightweight, and flexible electronics requires the use of polymer-film-based solid-state capacitors with high energy densities. Fast charge/discharge rates of film capacitors on the order of microseconds are not achievable with slower charging conventional batteries, supercapacitors and related hybrid technologies. However, the current energy densities of polymer film capacitors fall short of rising demand, and could be significantly enhanced by increasing the breakdown strength (EBD) and dielectric permittivity (εr) of the polymer films. Co-extruded two-homopolymer component multilayered films have demonstrated much promise in this regard showing higher EBD over that of component polymers. Multilayered films can also help incorporate functional features besides energy storage, such as enhanced optical, mechanical, thermal and barrier properties. In this work, we report accomplishing multilayer, multicomponent block copolymer dielectric films (BCDF) with soft-shear driven highly oriented self-assembled lamellar diblock copolymers (BCP) as a novel application of this important class of self-assembling materials. Results of a model PS-b-PMMA system show ∼50% enhancement in EBD of self-assembled multilayer lamellar BCP films compared to unordered as-cast films, indicating that the breakdown is highly sensitive to the nanostructure of the BCP. The enhancement in EBD is attributed to the "barrier effect", where the multiple interfaces between the lamellae block components act as barriers to the dielectric breakdown through the film. The increase in EBD corresponds to more than doubling the energy storage capacity using a straightforward directed self-assembly strategy. This approach opens a new nanomaterial paradigm for designing high energy density dielectric materials.

Investigation on discharge characteristics of a coaxial dielectric barrier discharge reactor driven by AC and ns power sources

NASA Astrophysics Data System (ADS)

Qian, WANG; Feng, LIU; Chuanrun, MIAO; Bing, YAN; Zhi, FANG

2018-03-01

A coaxial dielectric barrier discharge (DBD) reactor with double layer dielectric barriers has been developed for exhaust gas treatment and excited either by AC power or nanosecond (ns) pulse to generate atmospheric pressure plasma. The comparative study on the discharge characteristics of the discharge uniformity, power deposition, energy efficiency, and operation temperature between AC and ns pulsed coaxial DBD is carried out in terms of optical and electrical characteristics and operation temperature for optimizing the coaxial DBD reactor performance. The voltages across the air gap and dielectric layer and the conduction and displacement currents are extracted from the applied voltages and measured currents of AC and ns pulsed coaxial DBDs for the calculation of the power depositions and energy efficiencies through an equivalent electrical model. The discharge uniformity and operating temperature of the coaxial DBD reactor are monitored and analyzed by optical images and infrared camera. A heat conduction model is used to calculate the temperature of the internal quartz tube. It is found that the ns pulsed coaxial DBD has a much higher instantaneous power deposition in plasma, a lower total power consumption, and a higher energy efficiency compared with that excited by AC power and is more homogeneous and stable. The temperature of the outside wall of the AC and ns pulse excited coaxial DBD reaches 158 °C and 64.3 °C after 900 s operation, respectively. The experimental results on the comparison of the discharge characteristics of coaxial DBDs excited by different powers are significant for understanding of the mechanism of DBDs, reducing energy loss, and optimizing the performance of coaxial DBD in industrial applications.

Directed self-assembly of block copolymers for high breakdown strength polymer film capacitors

DOE PAGES

Samant, Saumil P.; Grabowski, Christopher A.; Kisslinger, Kim; ...

2016-03-04

Emerging needs for fast charge/discharge yet high-power, lightweight, and flexible electronics requires the use of polymer-film-based solid-state capacitors with high energy densities. Fast charge/discharge rates of film capacitors on the order of microseconds are not achievable with slower charging conventional batteries, supercapacitors and related hybrid technologies. However, the current energy densities of polymer film capacitors fall short of rising demand, and could be significantly enhanced by increasing the breakdown strength (E BD) and dielectric permittivity (ε r) of the polymer films. Co-extruded two-homopolymer component multilayered films have demonstrated much promise in this regard showing higher E BD over that ofmore » component polymers. Multilayered films can also help incorporate functional features besides energy storage, such as enhanced optical, mechanical, thermal and barrier properties. In this work, we report accomplishing multilayer, multicomponent block copolymer dielectric films (BCDF) with soft-shear driven highly oriented self-assembled lamellar diblock copolymers (BCP) as a novel application of this important class of self-assembling materials. Results of a model PS- b-PMMA system show ~50% enhancement in E BD of self-assembled multilayer lamellar BCP films compared to unordered as-cast films, indicating that the breakdown is highly sensitive to the nanostructure of the BCP. The enhancement in E BD is attributed to the “barrier effect”, where the multiple interfaces between the lamellae block components act as barriers to the dielectric breakdown through the film. The increase in E BD corresponds to more than doubling the energy storage capacity using a straightforward directed self-assembly strategy. Lastly, this approach opens a new nanomaterial paradigm for designing high energy density dielectric materials.« less

Electrical dependence on the chemical composition of the gate dielectric in indium gallium zinc oxide thin-film transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tari, Alireza, E-mail: atari@uwaterloo.ca; Lee, Czang-Ho; Wong, William S.

Bottom-gate thin-film transistors were fabricated by depositing a 50 nm InGaZnO (IGZO) channel layer at 150 °C on three separate gate dielectric films: (1) thermal SiO{sub 2}, (2) plasma-enhanced chemical-vapor deposition (PECVD) SiN{sub x}, and (3) a PECVD SiO{sub x}/SiN{sub x} dual-dielectric. X-ray photoelectron and photoluminescence spectroscopy showed the V{sub o} concentration was dependent on the hydrogen concentration of the underlying dielectric film. IGZO films on SiN{sub x} (high V{sub o}) and SiO{sub 2} (low V{sub o}) had the highest and lowest conductivity, respectively. A PECVD SiO{sub x}/SiN{sub x} dual-dielectric layer was effective in suppressing hydrogen diffusion from the nitride layer intomore » the IGZO and resulted in higher resistivity films.« less

Analog tree-organized multiplexer

NASA Technical Reports Server (NTRS)

Crabbe, J. S.; Smith, D. M.; Turner, W. R.

1971-01-01

An analog tree-organized multiplexer (ATOM) which is intended for use in the telemetry system of an interplanetary spacecraft is designed. The ATOM will be fabricated by a monolithic, dielectric isolation process, and will contain silicon junction field effect transistors (JFET) as the active elements. The effect of the radiation environment on the performance of the ATOM is analyzed. The result indicates that the expected radiation environment will cause only minor changes in the preradiation characteristics of ATOM. The JFET in the ATOM is designed to meet the electrical requirements when fabricated by either the double poly-dielectric isolation process or the raised dielectric isolation process. The effect of the heat treatment required for the dielectric isolation process on the diffusion profile of the JFET is described. The layout of the ATOM circuit for fabrication by either the double poly or raised dielectric isolation process is also given.

Dielectric relaxation and localized electron hopping in colossal dielectric (Nb,In)-doped TiO2 rutile nanoceramics.

PubMed

Tsuji, Kosuke; Han, HyukSu; Guillemet-Fritsch, Sophie; Randall, Clive A

2017-03-28

Dielectric spectroscopy was performed on a Nb and In co-doped rutile TiO 2 nano-crystalline ceramic (n-NITO) synthesized by a low-temperature spark plasma sintering (SPS) technique. The dielectric properties of the n-NITO were not largely affected by the metal electrode contacts. Huge dielectric relaxation was observed at a very low temperature below 35 K. Both the activation energy and relaxation time suggested that the electronic hopping motion is the underlying mechanism responsible for the colossal dielectric permittivity (CP) and its relaxation, instead of the internal barrier layer effect or a dipolar relaxation. With Havriliak-Negami (H-N) fitting, a relaxation time with a large distribution of dielectric relaxations was revealed. The broad distributed relaxation phenomena indicated that Nb and In were involved, controlling the dielectric relaxation by modifying the polarization mechanism and localized states. The associated distribution function is calculated and presented. The frequency-dependent a.c. conductance is successfully explained by a hopping conduction model of the localized electrons with the distribution function. It is demonstrated that the dielectric relaxation is strongly correlated with the hopping electrons in the localized states. The CP in SPS n-NITO is then ascribed to a hopping polarization.

Materials properties of hafnium and zirconium silicates: Metal interdiffusion and dopant penetration studies

NASA Astrophysics Data System (ADS)

Quevedo Lopez, Manuel Angel

Hafnium and Zirconium based gate dielectrics are considered potential candidates to replace SiO2 or SiON as the gate dielectric in CMOS processing. Furthermore, the addition of nitrogen into this pseudo-binary alloy has been shown to improve their thermal stability, electrical properties, and reduce dopant penetration. Because CMOS processing requires high temperature anneals (up to 1050°C), it is important to understand the diffusion properties of any metal associated with the gate dielectric in silicon at these temperatures. In addition, dopant penetration from the doped polysilicon gate into the Si channel at these temperatures must also be studied. Impurity outdiffusion (Hf, Zr) from the dielectric, or dopant (B, As, P) penetration through the dielectric into the channel region would likely result in deleterious effects upon the carrier mobility. In this dissertation extensive thermal stability studies of alternate gate dielectric candidates ZrSixOy and HfSixO y are presented. Dopant penetration studies from doped-polysilicon through HfSixOy and HfSixOyNz are also presented. Rutherford Backscattering Spectroscopy (RBS), Heavy Ion RBS (HI-RBS), X-ray Photoelectron Spectroscopy (XPS), High Resolution Transmission Electron Microscopy (HR-TEM), and Time of Flight and Dynamic Secondary Ion Mass Spectroscopy (ToF-SIMS, D-SIMS) methods were used to characterize these materials. The dopant diffusivity is calculated by modeling of the dopant profiles in the Si substrate. In this disseration is reported that Hf silicate films are more stable than Zr silicate films, from the metal interdiffusion point of view. On the other hand, dopant (B, As, and P) penetration is observed for HfSixO y films. However, the addition of nitrogen to the Hf - Si - O systems improves the dopant penetration properties of the resulting HfSi xOyNz films.

Comparison of the reactivity of alkyl and alkyl amine precursors with native oxide GaAs(100) and InAs(100) surfaces

NASA Astrophysics Data System (ADS)

Henegar, A. J., , Dr.; Gougousi, T., , Prof.

2016-12-01

In this manuscript we compare the interaction of alkyl (trimethyl aluminum) and alkyl amine (tetrakis dimethylamino titanium) precursors during thermal atomic layer deposition with III-V native oxides. For that purpose we deposit Al2O3 and TiO2, using H2O as the oxidizer, on GaAs(100) and InAs(100) native oxide surfaces. We find that there are distinct differences in the behavior of the two films. For the Al2O3 ALD very little native oxide removal happens after the first few ALD cycles while the interaction of the alkyl amine precursor for TiO2 and the native oxides continues well after the surface has been covered with 2 nm of TiO2. This difference is traced to the superior properties of Al2O3 as a diffusion barrier. Differences are also found in the behavior of the arsenic oxides of the InAs and GaAs substrates. The arsenic oxides from the InAs surface are found to mix more efficiently in the growing dielectric film than those from the GaAs surface. This difference is attributed to lower native oxide stability as well as an initial diffusion path formation by the indium oxides.

Mesoscale elucidation of laser-assisted chemical deposition of Sn nanostructured electrodes

NASA Astrophysics Data System (ADS)

Liu, Zhixiao; Deng, Biwei; Cheng, Gary J.; Deng, Huiqiu; Mukherjee, Partha P.

2015-06-01

Nanostructured tin (Sn) is a promising high-capacity electrode for improved performance in lithium-ion batteries for electric vehicles. In this work, Sn nanoisland growth for nanostructured electrodes assisted by the pulse laser irradiation has been investigated based on a mesoscale modeling formalism. The influence of pertinent processing conditions, such as pulse duration, heating/cooling rates, and atom flux, on the Sn nanostructure formation is specifically considered. The interaction between the adsorbed atom and the substrate, represented by the adatom diffusion barrier, is carefully studied. It is found that the diffusion barrier predominantly affects the distribution of Sn atoms. For both α-Sn and β-Sn, the averaged coordination number is larger than 3 when the diffusion barrier equals to 0.15 eV. The averaged coordination number decreases as the diffusion barrier increases. The substrate temperature, which is determined by heating/cooling rates and pulse duration, can also affect the formation of Sn nanoislands. For α-Sn, when applied low heating/cooling rates, nanoislands cannot form if the diffusion barrier is larger than 0.35 eV.

Protective coatings for sensitive materials

DOEpatents

Egert, C.M.

1997-08-05

An enhanced protective coating is disclosed to prevent interaction between constituents of the environment and devices that can be damaged by those constituents. This coating is provided by applying a synergistic combination of diffusion barrier and physical barrier materials. These materials can be, for example, in the form of a plurality of layers of a diffusion barrier and a physical barrier, with these barrier layers being alternated. Further protection in certain instances is provided by including at least one layer of a getter material to actually react with one or more of the deleterious constituents. The coating is illustrated by using alternating layers of an organic coating (such as Parylene-C{trademark}) as the diffusion barrier, and a metal coating (such as aluminum) as the physical barrier. For best results there needs to be more than one of at least one of the constituent layers. 4 figs.

Methods and Apparatus for Pulsed-DC Dielectric Barrier Discharge Plasma Actuator and Circuit

NASA Technical Reports Server (NTRS)

Corke, Thomas C. (Inventor); Gold, Calman (Inventor); Kaszeta, Richard (Inventor)

2017-01-01

A plasma generating device intended to induce a flow in a fluid via plasma generation includes a dielectric separating two electrodes and a power supply. The first electrode is exposed to a fluid flow while the second electrode is positioned under the dielectric. The power supply is electrically coupled to a switch and the first and second electrodes. When the power supply is energized by repeated action of the switch, it causes a pulsed DC current between the electrodes which causes the fluid to ionize generating a plasma. The generation of the plasma induces a force with a velocity component in the fluid.

Fault current limiter

DOEpatents

Darmann, Francis Anthony

2013-10-08

A fault current limiter (FCL) includes a series of high permeability posts for collectively define a core for the FCL. A DC coil, for the purposes of saturating a portion of the high permeability posts, surrounds the complete structure outside of an enclosure in the form of a vessel. The vessel contains a dielectric insulation medium. AC coils, for transporting AC current, are wound on insulating formers and electrically interconnected to each other in a manner such that the senses of the magnetic field produced by each AC coil in the corresponding high permeability core are opposing. There are insulation barriers between phases to improve dielectric withstand properties of the dielectric medium.

The simplest equivalent circuit of a pulsed dielectric barrier discharge and the determination of the gas gap charge transfer

NASA Astrophysics Data System (ADS)

Pipa, A. V.; Koskulics, J.; Brandenburg, R.; Hoder, T.

2012-11-01

The concept of the simplest equivalent circuit for a dielectric barrier discharge (DBD) is critically reviewed. It is shown that the approach is consistent with experimental data measured either in large-scale sinusoidal-voltage driven or miniature pulse-voltage driven DBDs. An expression for the charge transferred through the gas gap q(t) is obtained with an accurate account for the displacement current and the values of DBD reactor capacitance. This enables (i) the significant reduction of experimental error in the determination of q(t) in pulsed DBDs, (ii) the verification of the classical electrical theory of ozonizers about maximal transferred charge qmax, and (iii) the development of a graphical method for the determination of qmax from charge-voltage characteristics (Q-V plots, often referred as Lissajous figures) measured under pulsed excitation. The method of graphical presentation of qmax is demonstrated with an example of a Q-V plot measured under pulsed excitation. The relations between the discharge current jR(t), the transferred charge q(t), and the measurable parameters are presented in new forms, which enable the qualitative interpretation of the measured current and voltage waveforms without the knowledge about the value of the dielectric barrier capacitance Cd. Whereas for quantitative evaluation of electrical measurements, the accurate estimation of the Cd is important.

Giant dielectric constant in CaCu3Ti4O12 nanoceramics

NASA Astrophysics Data System (ADS)

Ahmad, Mohamad M.

2013-06-01

Nanoceramics of CaCu3Ti4O12 (CCTO) were synthesized by mechanosynthesis and spark plasma sintering with grain size of 150-200 nm. Giant dielectric constant properties are observed in the CCTO nanoceramics due to internal barrier layer capacitance (IBLC) effects. Impedance spectroscopy data suggest that the presence of resistive grain boundaries in addition to resistive domain boundaries is the origin of the IBLCs in CCTO nanoceramics.

First-principles investigation of point defect and atomic diffusion in Al2Ca

NASA Astrophysics Data System (ADS)

Tian, Xiao; Wang, Jia-Ning; Wang, Ya-Ping; Shi, Xue-Feng; Tang, Bi-Yu

2017-04-01

Point defects and atomic diffusion in Al2Ca have been studied from first-principles calculations within density functional framework. After formation energy and relative stability of point defects are investigated, several predominant diffusion processes in Al2Ca are studied, including sublattice one-step mechanism, 3-jump vacancy cycles and antistructure sublattice mechanism. The associated energy profiles are calculated with climbing image nudged elastic band (CI-NEB) method, then the saddle points and activation barriers during atomic diffusion are further determined. The resulted activation barriers show that both Al and Ca can diffuse mainly mediated by neighbor vacancy on their own sublattice. 3-jump cycle mechanism mediated by VCa may make some contribution to the overall Al diffusion. And antistructure (AS) sublattice mechanism can also play an important role in Ca atomic diffusion owing to the moderate activation barrier.

Dependence of Ozone Generation on Gas Temperature Distribution in AC Atmospheric Pressure Dielectric Barrier Discharge in Oxygen

NASA Astrophysics Data System (ADS)

Takahashi, Go; Akashi, Haruaki

AC atmospheric pressure multi-filament dielectric barrier discharge in oxygen has been simulated using two dimensional fluid model. In the discharge, three kinds of streamers have been obtained. They are primary streamers, small scale streamers and secondary streamers. The primary streamers are main streamers in the discharge and the small scale streamers are formed after the ceasing of the primary streamers. And the secondary streamers are formed on the trace of the primary streamers. In these streamers, the primary and the small scale streamers are very effective to generate O(3P) oxygen atoms which are precursor of ozone. And the ozone is generated mainly in the vicinity of the dielectrics. In high gas temperature region, ozone generation decreases in general. However, increase of the O(3P) oxygen atom density in high gas temperature region compensates decrease of ozone generation rate coefficient. As a result, amount of ozone generation has not changed. But if the effect of gas temperature was neglected, amount of ozone generation increases 10%.

Carbon dioxide splitting in a dielectric barrier discharge plasma: a combined experimental and computational study.

PubMed

Aerts, Robby; Somers, Wesley; Bogaerts, Annemie

2015-02-01

Plasma technology is gaining increasing interest for the splitting of CO2 into CO and O2 . We have performed experiments to study this process in a dielectric barrier discharge (DBD) plasma with a wide range of parameters. The frequency and dielectric material did not affect the CO2 conversion and energy efficiency, but the discharge gap can have a considerable effect. The specific energy input has the most important effect on the CO2 conversion and energy efficiency. We have also presented a plasma chemistry model for CO2 splitting, which shows reasonable agreement with the experimental conversion and energy efficiency. This model is used to elucidate the critical reactions that are mostly responsible for the CO2 conversion. Finally, we have compared our results with other CO2 splitting techniques and we identified the limitations as well as the benefits and future possibilities in terms of modifications of DBD plasmas for greenhouse gas conversion in general. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Nanowire growth process modeling and reliability models for nanodevices

NASA Astrophysics Data System (ADS)

Fathi Aghdam, Faranak

Nowadays, nanotechnology is becoming an inescapable part of everyday life. The big barrier in front of its rapid growth is our incapability of producing nanoscale materials in a reliable and cost-effective way. In fact, the current yield of nano-devices is very low (around 10 %), which makes fabrications of nano-devices very expensive and uncertain. To overcome this challenge, the first and most important step is to investigate how to control nano-structure synthesis variations. The main directions of reliability research in nanotechnology can be classified either from a material perspective or from a device perspective. The first direction focuses on restructuring materials and/or optimizing process conditions at the nano-level (nanomaterials). The other direction is linked to nano-devices and includes the creation of nano-electronic and electro-mechanical systems at nano-level architectures by taking into account the reliability of future products. In this dissertation, we have investigated two topics on both nano-materials and nano-devices. In the first research work, we have studied the optimization of one of the most important nanowire growth processes using statistical methods. Research on nanowire growth with patterned arrays of catalyst has shown that the wire-to-wire spacing is an important factor affecting the quality of resulting nanowires. To improve the process yield and the length uniformity of fabricated nanowires, it is important to reduce the resource competition between nanowires during the growth process. We have proposed a physical-statistical nanowire-interaction model considering the shadowing effect and shared substrate diffusion area to determine the optimal pitch that would ensure the minimum competition between nanowires. A sigmoid function is used in the model, and the least squares estimation method is used to estimate the model parameters. The estimated model is then used to determine the optimal spatial arrangement of catalyst arrays. This work is an early attempt that uses a physical-statistical modeling approach to studying selective nanowire growth for the improvement of process yield. In the second research work, the reliability of nano-dielectrics is investigated. As electronic devices get smaller, reliability issues pose new challenges due to unknown underlying physics of failure (i.e., failure mechanisms and modes). This necessitates new reliability analysis approaches related to nano-scale devices. One of the most important nano-devices is the transistor that is subject to various failure mechanisms. Dielectric breakdown is known to be the most critical one and has become a major barrier for reliable circuit design in nano-scale. Due to the need for aggressive downscaling of transistors, dielectric films are being made extremely thin, and this has led to adopting high permittivity (k) dielectrics as an alternative to widely used SiO2 in recent years. Since most time-dependent dielectric breakdown test data on bilayer stacks show significant deviations from a Weibull trend, we have proposed two new approaches to modeling the time to breakdown of bi-layer high-k dielectrics. In the first approach, we have used a marked space-time self-exciting point process to model the defect generation rate. A simulation algorithm is used to generate defects within the dielectric space, and an optimization algorithm is employed to minimize the Kullback-Leibler divergence between the empirical distribution obtained from the real data and the one based on the simulated data to find the best parameter values and to predict the total time to failure. The novelty of the presented approach lies in using a conditional intensity for trap generation in dielectric that is a function of time, space and size of the previous defects. In addition, in the second approach, a k-out-of-n system framework is proposed to estimate the total failure time after the generation of more than one soft breakdown.

Investigation to develop a method to apply diffusion barrier to high strength fibers

NASA Technical Reports Server (NTRS)

Veltri, R. D.; Paradis, R. D.; Douglas, F. C.

1975-01-01

A radio frequency powered ion plating process was used to apply the diffusion barriers of aluminum oxide, yttrium oxide, hafnium oxide and titanium carbide to a substrate tungsten fiber. Each of the coatings was examined as to its effect on both room temperature strength and tensile strength of the base tungsten fiber. The coated fibers were then overcoated with a nickel alloy to become single cell diffusion couples. These diffusion couples were exposed to 1093 C for 24 hours, cycled between room temperature and 1093 C, and given a thermal anneal for 100 hours at 1200 C. Tensile testing and metallographic examinations determined that the hafnium oxide coating produced the best high temperature diffusion barrier for tungsten of the four coatings.

Concentric superlattice pattern in dielectric barrier discharge

DOE Office of Scientific and Technical Information (OSTI.GOV)

Feng, Jianyu; Dong, Lifang, E-mail: donglfhbu@163.com; Wei, Lingyan

2016-09-15

The concentric superlattice pattern with three sub-lattices is observed in the dielectric barrier discharge in air/argon for the first time. Its spatiotemporal structure investigated by an intensified charge-coupled device shows that it is an interleaving of three different sub-lattices, which are concentric-ring, concentric-framework, and concentric-dot, respectively. The images of single-frame indicate that the concentric-ring and concentric-framework are composed of individual filaments. By using the optical emission spectrum method, it is found that plasma parameters of the concentric-dot are different from those of the concentric-ring and concentric-framework. The spatiotemporal dynamics of the concentric superlattice pattern is dependent upon the effective fieldmore » of the distribution of the wall charges field and the applied field.« less

Degradation of imidacloprid in wastewater by dielectric barrier discharge system

NASA Astrophysics Data System (ADS)

Li, Kebin

2018-03-01

The degradation behavior of imidacloprid in wastewater was investigated with dielectric barrier discharge (DBD) system and the effect of several factors that could influence degradation process was explored in this study. The study showed that imidacloprid could be effectively removed by DBD system under certain conditions. The optimal removal efficiency was 75.6% when applied voltage was 75 V and 160 min was selected as the discharge time. Moreover, lower conductivity and alkaline environment were favorable for the imidacloprid degradation. The presence of Cu2+ and Fe2+ could benefit for the imidacloprid degradation, however the catalytic effect of Cu2+ was lower than that of Fe2+. Furthermore, methanol as scavenger decreased the removal efficiency of imidacloprid owing to the scavenger inhibited the generation of hydroxyl radicals during the DBD process.

Conversion of carbon dioxide to carbon monoxide by pulse dielectric barrier discharge plasma

NASA Astrophysics Data System (ADS)

Wang, Taobo; Liu, Hongxia; Xiong, Xiang; Feng, Xinxin

2017-01-01

The conversion of carbon dioxide (CO2) to carbon monoxide (CO) was investigated in a non-thermal plasma dielectric barrier discharge (DBD) reactor, and the effects of different process conditions on the CO2 conversion were investigated. The results showed that the increase of input power could optimize the conversion of CO2 to CO. The CO2 conversion and CO yield were negatively correlated with the gas flow rate, but there was an optimum gas flow rate, that made the CO selectivity best. The carrier gas (N2, Ar) was conducive to the conversion of CO2, and the effect of N2 as carrier gas was better than Ar. The conversion of CO2 to CO was enhanced by addition of the catalyst (5A molecular sieve).

Transient change in the shape of premixed burner flame with the superposition of pulsed dielectric barrier discharge

NASA Astrophysics Data System (ADS)

Zaima, Kazunori; Sasaki, Koichi

2016-08-01

We investigated the transient phenomena in a premixed burner flame with the superposition of a pulsed dielectric barrier discharge (DBD). The length of the flame was shortened by the superposition of DBD, indicating the activation of combustion chemical reactions with the help of the plasma. In addition, we observed the modulation of the top position of the unburned gas region and the formations of local minimums in the axial distribution of the optical emission intensity of OH. These experimental results reveal the oscillation of the rates of combustion chemical reactions as a response to the activation by pulsed DBD. The cycle of the oscillation was 0.18-0.2 ms, which could be understood as the eigenfrequency of the plasma-assisted combustion reaction system.

Decomposition of L-valine under nonthermal dielectric barrier discharge plasma.

PubMed

Li, Yingying; Kojtari, Arben; Friedman, Gary; Brooks, Ari D; Fridman, Alex; Ji, Hai-Feng

2014-02-13

L-Valine solutions in water and phosphate buffer were treated with nonthermal plasma generated by using a dielectric barrier discharge (DBD) device and the products generated after plasma treatments were characterized by (1)H NMR and GC-MS. Our results demonstrate that L-valine is decomposed to acetone, formic acid, acetic acid, threo-methylaspartic acid, erythro-methlyaspartic acid, and pyruvic acid after direct exposure to DBD plasma. The concentrations of these compounds are time-dependent with plasma treatment. The mechanisms of L-valine under the DBD plasma are also proposed in this study. Acetone, pyruvic acid, and organic radicals (•)CHO, CH3COCH2OO(•) (acetonylperoxy), and CH3COC(OH)2OO(•) (1,1-dihydroxypropan-2-one peroxy) may be the determining chemicals in DNA damage.

Plasma density enhancement in atmospheric-pressure dielectric-barrier discharges by high-voltage nanosecond pulse in the pulse-on period: a PIC simulation

NASA Astrophysics Data System (ADS)

Sang, Chaofeng; Sun, Jizhong; Wang, Dezhen

2010-02-01

A particle-in-cell (PIC) plus Monte Carlo collision simulation is employed to investigate how a sustainable atmospheric pressure single dielectric-barrier discharge responds to a high-voltage nanosecond pulse (HVNP) further applied to the metal electrode. The results show that the HVNP can significantly increase the plasma density in the pulse-on period. The ion-induced secondary electrons can give rise to avalanche ionization in the positive sheath, which widens the discharge region and enhances the plasma density drastically. However, the plasma density stops increasing as the applied pulse lasts over certain time; therefore, lengthening the pulse duration alone cannot improve the discharge efficiency further. Physical reasons for these phenomena are then discussed.

Treatment of poly(ethylene terephthalate) foils by atmospheric pressure air dielectric barrier discharge and its influence on cell growth

NASA Astrophysics Data System (ADS)

Kuzminova, Anna; Vandrovcová, Marta; Shelemin, Artem; Kylián, Ondřej; Choukourov, Andrei; Hanuš, Jan; Bačáková, Lucie; Slavínská, Danka; Biederman, Hynek

2015-12-01

In this contribution an effect of dielectric barrier discharge (DBD) sustained in air at atmospheric pressure on surface properties of poly(ethylene terephthalate) (PET) foils is studied. It is found that exposure of PET to DBD plasma leads to rapid changes of surface chemical composition, wettability, surface morphology as well as mechanical properties of PET surface. In addition, based on biological tests that were performed using two cell types (Saos-2 human osteoblast-like cells and HUVEC human umbilical vein endothelial cells), it may be concluded that DBD plasma treatment positively influences cell growth on PET. This effect was found to be connected predominantly with increased surface energy and oxygen content of the surface of treated PET foils.

Robust, Flexible and Lightweight Dielectric Barrier Discharge Actuators Using Nanofoams/Aerogels

NASA Technical Reports Server (NTRS)

Siochi, Emilie J. (Inventor); Sauti, Godfrey (Inventor); Wilkinson, Stephen P. (Inventor); Guo, Haiquan N. (Inventor); Xu, Tian-Bing (Inventor); Meador, Mary Ann B. (Inventor)

2015-01-01

Robust, flexible, lightweight, low profile enhanced performance dielectric barrier discharge actuators (plasma actuators) based on aerogels/nanofoams with controlled pore size and size distribution as well as pore shape. The plasma actuators offer high body force as well as high force to weight ratios (thrust density). The flexibility and mechanical robustness of the actuators allows them to be shaped to conform to the surface to which they are applied. Carbon nanotube (CNT) based electrodes serve to further decrease the weight and profile of the actuators while maintaining flexibility while insulating nano-inclusions in the matrix enable tailoring of the mechanical properties. Such actuators are required for flow control in aeronautics and moving machinery such as wind turbines, noise abatement in landing gear and rotary wing aircraft and other applications.

Investigation of microstructure and properties of ultrathin graded ZrNx self-assembled diffusion barrier in deep nano-vias prepared by plasma ion immersion implantation

NASA Astrophysics Data System (ADS)

Zou, Jianxiong; Liu, Bo; Lin, Liwei; Lu, Yuanfu; Dong, Yuming; Jiao, Guohua; Ma, Fei; Li, Qiran

2018-01-01

Ultrathin graded ZrNx self-assembled diffusion barriers with controllable stoichiometry was prepared in Cu/p-SiOC:H interfaces by plasma immersion ion implantation (PIII) with dynamic regulation of implantation fluence. The fundamental relationship between the implantation fluence of N+ and the stoichiometry and thereby the electrical properties of the ZrNx barrier was established. The optimized fluence of a graded ZrN thin film with gradually decreased Zr valence was obtained with the best electrical performance as well. The Cu/p-SiOC:H integration is thermally stable up to 500 °C due to the synergistic effect of Cu3Ge and ZrNx layers. Accordingly, the PIII process was verified in a 100-nm-thick Cu dual-damascene interconnect, in which the ZrNx diffusion barrier of 1 nm thick was successfully self-assembled on the sidewall without barrier layer on the via bottom. In this case, the via resistance was reduced by approximately 50% in comparison with Ta/TaN barrier. Considering the results in this study, ultrathin ZrNx conformal diffusion barrier can be adopted in the sub-14 nm technology node.

Oxygen self-diffusion mechanisms in monoclinic Zr O2 revealed and quantified by density functional theory, random walk analysis, and kinetic Monte Carlo calculations

NASA Astrophysics Data System (ADS)

Yang, Jing; Youssef, Mostafa; Yildiz, Bilge

2018-01-01

In this work, we quantify oxygen self-diffusion in monoclinic-phase zirconium oxide as a function of temperature and oxygen partial pressure. A migration barrier of each type of oxygen defect was obtained by first-principles calculations. Random walk theory was used to quantify the diffusivities of oxygen interstitials by using the calculated migration barriers. Kinetic Monte Carlo simulations were used to calculate diffusivities of oxygen vacancies by distinguishing the threefold- and fourfold-coordinated lattice oxygen. By combining the equilibrium defect concentrations obtained in our previous work together with the herein calculated diffusivity of each defect species, we present the resulting oxygen self-diffusion coefficients and the corresponding atomistically resolved transport mechanisms. The predicted effective migration barriers and diffusion prefactors are in reasonable agreement with the experimentally reported values. This work provides insights into oxygen diffusion engineering in Zr O2 -related devices and parametrization for continuum transport modeling.

Alloyed coatings for dispersion strengthened alloys

NASA Technical Reports Server (NTRS)

Wermuth, F. R.; Stetson, A. R.

1971-01-01

Processing techniques were developed for applying several diffusion barriers to TD-Ni and TD-NiCr. Barrier coated specimens of both substrates were clad with Ni-Cr-Al and Fe-Cr-Al alloys and diffusion annealed in argon. Measurement of the aluminum distribution after annealing showed that, of the readily applicable diffusion barriers, a slurry applied tungsten barrier most effectively inhibited the diffusion of aluminum from the Ni-Cr-Al clad into the TD-alloy substrates. No barrier effectively limited interdiffusion of the Fe-Cr-Al clad with the substrates. A duplex process was then developed for applying Ni-Cr-Al coating compositions to the tungsten barrier coated substrates. A Ni-(16 to 32)Cr-3Si modifier was applied by slurry spraying and firing in vacuum, and was then aluminized by a fusion slurry process. Cyclic oxidation tests at 2300 F resulted in early coating failure due to inadequate edge coverage and areas of coating porosity. EMP analysis showed that oxidation had consumed 70 to 80 percent of the aluminum in the coating in less than 50 hours.

TiO2 as diffusion barrier at Co/Alq3 interface studied by x-ray standing wave technique

NASA Astrophysics Data System (ADS)

Phatak Londhe, Vaishali; Gupta, A.; Ponpandian, N.; Kumar, D.; Reddy, V. R.

2018-06-01

Nano-scale diffusion at the interfaces in organic spin valve thin films plays a vital role in controlling the performance of magneto-electronic devices. In the present work, it is shown that a thin layer of titanium dioxide at the interface of Co/Alq3 can act as a good diffusion barrier. The buried interfaces of Co/Alq3/Co organic spin valve thin film has been studied using x-ray standing waves technique. A planar waveguide is formed with Alq3 layer forming the cavity and Co layers as the walls of the waveguide. Precise information about diffusion of Co into Alq3 is obtained through excitation of the waveguide modes. It is found that the top Co layer diffuses deep into the Alq3 resulting in incorporation of 3.1% Co in the Alq3 layer. Insertion of a 1.7 nm thick barrier layer of TiO2 at Co/Alq3 interface results in a drastic reduction in the diffusion of Co into Alq3 to a value of only 0.4%. This suggests a better performance of organic spin valve with diffusion barrier of TiO2.

Humidity effects on surface dielectric barrier discharge for gaseous naphthalene decomposition

NASA Astrophysics Data System (ADS)

Abdelaziz, Ayman A.; Ishijima, Tatsuo; Seto, Takafumi

2018-04-01

Experiments are performed using dry and humid air to clarify the effects of water vapour on the characteristics of surface dielectric barrier discharge (SDBD) and investigate its impact on the performance of the SDBD for decomposition of gaseous naphthalene in air stream. The current characteristics, including the discharge and the capacitive currents, are deeply analyzed and the discharge mechanism is explored. The results confirmed that the humidity affected the microdischarge distribution without affecting the discharge mode. Interestingly, it is found that the water vapour had a significant influence on the capacitance of the reactor due to its deposition on the discharge electrode and the dielectric, which, in turn, affects the power loss in the dielectric and the total power consumed in the reactor. Thus, the factor of the humidity effect on the power loss in the dielectric should be considered in addition to its effect on the attachment coefficient. Additionally, there was an optimum level of the humidity for the decomposition of naphthalene in the SDBD, and its value depended on the gas composition, where the maximum naphthalene decomposition efficiency in O2/H2O is achieved at the humidity level ˜10%, which was lower than that obtained in air/H2O (˜28%). The results also revealed that the role of the humidity in the decomposition efficiency was not significant in the humidified O2 at high power level. This was attributed to the significant increase in oxygen-derived species (such as O atoms and O3) at high power, which was enough to overcome the negative effects of the humidity.

Electrical properties of graphene tunnel junctions with high-κ metal-oxide barriers

NASA Astrophysics Data System (ADS)

Feng, Ying; Trainer, Daniel J.; Chen, Ke

2017-04-01

An insulating barrier is one of the key components in electronic devices that makes use of quantum tunneling principles. Many metal-oxides have been used as a good barrier material in a tunnel junction for their large band gap, stable chemical properties and superb properties for forming a thin and pin-hole-free insulating layer. The reduced dimensions of transistors have led to the need for alternative, high dielectric constant (high-κ) oxides to replace conventional silicon-based dielectrics to reduce the leaking current induced by electron tunneling. On the other hand, a tunnel junction with one or both electrodes made of graphene may lead to novel applications due to the massless Dirac fermions from the graphene. Here we have fabricated sandwich-type graphene tunnel junctions with high-κ metal-oxides as barriers, including Al2O3, HfO2, ZrO2, and TiO2. Tunneling properties are investigated by observing the temperature and time dependences of the tunneling spectra. Our results show the potential for applications of high-κ oxides in graphene tunnel junctions and bringing new opportunities for memory and logic electronic devices.

Electron transport in high aspect ratio semiconductor nanowires and metal-semiconductor interfaces

NASA Astrophysics Data System (ADS)

Sun, Zhuting

We are facing variability problems for modern semiconductor transistors due to the fact that the performances of nominally identical devices in the scale of 10 100 nm could be dramatically different attributed to the small manufacturing variations. Different doping strategies give statistical variations in the number of dopant atom density ND in the channel. The material size gives variations in wire diameter dW. And the immediate environment of the material leads to an additional level of variability. E.g. vacuum-semiconductor interface causes variations in surface state density Ds, metal-semiconductor interface causes variations in Schottky barrier and dielectric semiconductor interface induces dielectric confinement at small scales. To approach these variability problems, I choose Si-doped GaAs nanowires as an example. I investigate transport in Si-doped GaAs nanowire (NW) samples contacted by lithographically patterned Gold-Titanium films as function of temperature T. I find a drastically different temperature dependence between the wire resistance RW, which is relatively weak, and the zero bias resistance RC, which is strong. I show that the data are consistent with a model based on a sharp donor energy level slightly above the bottom of the semiconductor conduction band and develop a simple method for using transport measurements for estimates of the doping density after nanowire growth. I discuss the predictions of effective free carrier density n eff as function of the surface state density Ds and wire size dW. I also describe a correction to the widely used model of Schottky contacts that improves thermodynamic consistency of the Schottky tunnel barrier profile and show that the original theory may underestimate the barrier conductance under certain conditions. I also provide analytical calculations for shallow silicon dopant energy in GaAs crystals, and find the presence of dielectrics (dielectric screening) and free carriers (Coulomb screening) cause a reduction of ionization energy and shift the donor energy level ED upward, accompanying conduction band EC shift downward due to band gap narrowing for doped semiconductor material. The theoretical results are in a reasonable agreement with previous experimental data. I also find that when the material reduces to nanoscale, dielectric confinement and surface depletion compete with both Coulomb screening and dielectric screening that shift the donor level ED down towards the band gap. The calculation should be appropriate for all types of semiconductors and dopant species.

Suppression of Lateral Diffusion and Surface Leakage Currents in nBn Photodetectors Using an Inverted Design

NASA Astrophysics Data System (ADS)

Du, X.; Savich, G. R.; Marozas, B. T.; Wicks, G. W.

2018-02-01

Surface leakage and lateral diffusion currents in InAs-based nBn photodetectors have been investigated. Devices fabricated using a shallow etch processing scheme that etches through the top contact and stops at the barrier exhibited large lateral diffusion current but undetectably low surface leakage. Such large lateral diffusion current significantly increased the dark current, especially in small devices, and causes pixel-to-pixel crosstalk in detector arrays. To eliminate the lateral diffusion current, two different approaches were examined. The conventional solution utilized a deep etch process, which etches through the top contact, barrier, and absorber. This deep etch processing scheme eliminated lateral diffusion, but introduced high surface current along the device mesa sidewalls, increasing the dark current. High device failure rate was also observed in deep-etched nBn structures. An alternative approach to limit lateral diffusion used an inverted nBn structure that has its absorber grown above the barrier. Like the shallow etch process on conventional nBn structures, the inverted nBn devices were fabricated with a processing scheme that only etches the top layer (the absorber, in this case) but avoids etching through the barrier. The results show that inverted nBn devices have the advantage of eliminating the lateral diffusion current without introducing elevated surface current.

Kinetics and Chemistry of Ionization Wave Discharges Propagating Over Dielectric Surfaces

NASA Astrophysics Data System (ADS)

Petrishchev, Vitaly

Experimental studies of near-surface ionization wave electric discharges generated by high peak voltage (20-30 kV), nanosecond duration pulses (full width at half-maximum 50-100 ns) of positive and negative polarity and propagating over dielectric surfaces have been performed. A novel way to sustain diffuse, reproducible, ns pulse surface plasmas at a liquid-vapor interface is demonstrated at buffer gas pressures ranging from 10 to 200 Torr. Generation of surface ionization waves well reproduced shot-to-shot and sustaining diffuse near-surface plasmas is one of the principal advantages of the use of ns pulse discharge waveforms. This makes possible characterization of these plasmas in repetitively pulsed experiments. Numerous applications of these plasmas include low-temperature plasma assisted combustion, plasma fuel reforming, plasma flow control, plasma materials processing, agriculture, biology, and medicine. The objectives of the present work are (i) to demonstrate that surface ionization wave discharge plasmas sustained at a liquid-vapor interface can be used as an experimental platform for studies of near-surface plasma chemical reaction kinetics, at the conditions when the interface acts as a high-yield source of radical species, and (ii) to obtain quantitative insight into dynamics, kinetics and chemistry of surface ionization wave discharges and provide experimental data for validation of kinetic models, to assess their predictive capability. Generation of the initial radical pool may trigger a number of plasma chemical processes leading to formation of a variety of stable product species, depending on the initial composition of the liquid and the buffer gas flow. One of the products formed and detected during surface plasma / liquid water interaction is hydroxyl radical, which is closely relevant to applications of plasmas for biology and medicine. The present work includes detailed studies of surface ionization wave discharges sustained in different buffer gases over solid and liquid dielectric surfaces, such as quartz, distilled water, saline solution, and alcohols, over a wide range of pressures. Specific experiments include: measurements of ionization wave speed; plasma emission imaging using a ns gate camera; detection of surface discharge plasma chemistry products using Fourier transform infrared absorption spectroscopy; surface charge dynamics on short (ns) and long (hundreds of mus) time scales; time-resolved electron density and electron temperature measurements in a ns pulse surface discharge in helium by Thomson scattering; spatially-resolved absolute OH and H atom concentration measurements in ns pulse discharges over distilled water by single-photon and two-photon Laser Induced Fluorescence; and schlieren imaging of perturbations generated by a ns pulse dielectric barrier discharge in a surface plasma actuator in quiescent atmospheric pressure air.

Effects of fluoride residue on thermal stability in Cu/porous low-k interconnects

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kobayashi, Y.; Ozaki, S.; Nakamura, T.

2014-06-19

We have investigated the effects of fluoride residue on the thermal stability of a Cu/barrier metal (BM)/porous low-k film (k < 2.3) structure. We confirmed that the Cu agglomerated more on a BM/inter layer dielectric (ILD) with a fluoride residue. To consider the effect of fluoride residue on Cu agglomeration, the structural state at the Cu/BM interface was evaluated with a cross-section transmission electron microscope (TEM) and atomic force microscope (AFM). In addition, the chemical bonding state at the Cu/BM interface was evaluated with the interface peeling-off method and X-ray photoelectron spectroscopy (XPS). Moreover, we confirmed the ionization of fluoridemore » residue and oxidation of Cu with fluoride and moisture to clarify the effect of fluoride residue on Cu. Our experimental results indicated that the thermal stability in Cu/porous low-k interconnects was degraded by enhancement of Cu oxidation with fluoride ions diffusion as an oxidizing catalyst.« less

Influence of thermal annealing and radiation enhanced diffusion processes on surface plasmon resonance of gold implanted dielectric matrices

NASA Astrophysics Data System (ADS)

Devi, Ksh. Devarani; Ojha, Sunil; Singh, Fouran

2018-03-01

Gold nanoparticles (AuNPs) embedded in fused silica and sapphire dielectric matrices were synthesized by Au ion implantation. Systematic investigations were carried out to study the influence of implantation dose, post annealing temperature, swift heavy ion (SHI) irradiation and radiation enhanced diffusion (RED). Rutherford Backscattering Spectrometry (RBS) measurements were carried out to quantify concentration and depth profile of Au present in the host matrices. X-ray diffraction (XRD) was employed to characterize AuNPs formation. As-implanted and post-annealed films were irradiated using 100 MeV Ag ions to investigate the effect of electronic energy deposition on size and shape of NPs, which is estimated indirectly by the peak shape analysis of surface plasmon resonance (SPR). The effect of volume fraction of Au and their redistribution is also reported. A strong absorption in near infra red region is also noticed and understood by the formation of percolated NPs in dielectric matrices. It is quite clear from these results that the effect of RED assisted Oswald ripening is much more pronounced than the conventional Oswald ripening for the growth of NPs in the case of silica host matrices. However for sapphire matrices, it seems that growth of NPs already completed during implantation and it may be attributed to the high diffusivity of Au in sapphire matrices during implantation process.

Polymer/metal oxide hybrid dielectrics for low voltage field-effect transistors with solution-processed, high-mobility semiconductors

NASA Astrophysics Data System (ADS)

Held, Martin; Schießl, Stefan P.; Miehler, Dominik; Gannott, Florentina; Zaumseil, Jana

2015-08-01

Transistors for future flexible organic light-emitting diode (OLED) display backplanes should operate at low voltages and be able to sustain high currents over long times without degradation. Hence, high capacitance dielectrics with low surface trap densities are required that are compatible with solution-processable high-mobility semiconductors. Here, we combine poly(methyl methacrylate) (PMMA) and atomic layer deposition hafnium oxide (HfOx) into a bilayer hybrid dielectric for field-effect transistors with a donor-acceptor polymer (DPPT-TT) or single-walled carbon nanotubes (SWNTs) as the semiconductor and demonstrate substantially improved device performances for both. The ultra-thin PMMA layer ensures a low density of trap states at the semiconductor-dielectric interface while the metal oxide layer provides high capacitance, low gate leakage and superior barrier properties. Transistors with these thin (≤70 nm), high capacitance (100-300 nF/cm2) hybrid dielectrics enable low operating voltages (<5 V), balanced charge carrier mobilities and low threshold voltages. Moreover, the hybrid layers substantially improve the bias stress stability of the transistors compared to those with pure PMMA and HfOx dielectrics.

Dynamic surface tension and adsorption mechanism of surfactin biosurfactant at the air-water interface.

PubMed

Onaizi, Sagheer A

2018-03-01

The dynamic adsorption of the anionic biosurfactant, surfactin, at the air-water interface has been investigated in this work and compared to those of two synthetic surfactants: the anionic sodium dodecylbenzenesulfonate (SDBS) and the nonionic octaethylene glycol monotetradecyl ether (C 14 E 8 ). The results revealed that surfactin adsorption at the air-water interface is purely controlled by diffusion mechanism at the initial stage of the adsorption process (i.e., [Formula: see text]), but shifts towards a mixed diffusion-barrier mechanism when surface tension approaches equilibrium (i.e., [Formula: see text]) due to the development of an energy barrier for adsorption. Such energy barrier has been found to be a function of the surfactin bulk concentration (increases with increasing surfactin concentration) and it is estimated to be in the range of 1.8-9.5 kJ/mol. Interestingly, such a trend (pure diffusion-controlled mechanism at [Formula: see text] and mixed diffusion-barrier mechanism at [Formula: see text]) has been also observed for the nonionic C 14 E 8 surfactant. Unlike the pure diffusion-controlled mechanism of the initial surfactin adsorption, which was the case in the presence and the absence of the sodium ion (Na + ), SDBS showed a mixed diffusion-barrier controlled at both short and long time, with an energy barrier of 3.0-9.0 and 3.8-18.0 kJ/mol, respectively. Such finding highlights the nonionic-like adsorption mechanism of surfactin despite its negative charge.

Migration mechanisms and diffusion barriers of vacancies in Ga2O3

NASA Astrophysics Data System (ADS)

Kyrtsos, Alexandros; Matsubara, Masahiko; Bellotti, Enrico

2017-06-01

We employ the nudged elastic band and the dimer methods within the standard density functional theory (DFT) formalism to study the migration of the oxygen and gallium vacancies in the monoclinic structure of β -Ga2O3 . We identify all the first nearest neighbor paths and calculate the migration barriers for the diffusion of the oxygen and gallium vacancies. We also identify the metastable sites of the gallium vacancies which are critical for the diffusion of the gallium atoms. The migration barriers for the diffusion of the gallium vacancies are lower than the migration barriers for oxygen vacancies by 1 eV on average, suggesting that the gallium vacancies are mobile at lower temperatures. Using the calculated migration barriers we estimate the annealing temperature of these defects within the harmonic transition state theory formalism, finding excellent agreement with the observed experimental annealing temperatures. Finally, we suggest the existence of percolation paths which enable the migration of the species without utilizing all the migration paths of the crystal.

Solid-State Ultracapacitor for Improved Energy Storage

NASA Technical Reports Server (NTRS)

Nabors, Sammy

2015-01-01

NASA's Marshall Space Flight Center has developed a solid-state ultracapacitor using a novel nanocomposite, dielectric material. The material's design is based on the internal barrier layer capacitance (IBLC) concept, and it uses novel dielectric and metallic conductive ink formulations. Novel processing methods developed by NASA provide for unique dielectric properties at the grain level. Nanoscale raw material powders are tailored using a variety of techniques and then formulated into a special ink. This dielectric ink is used with novel metallic conductive ink to print a capacitor layer structure into any design necessary to meet a range of technical requirements. The innovation is intended to replace current range safety batteries that NASA uses to power the systems that destroy off-course space vehicles. A solid-state design provides the needed robustness and safety for this demanding application.

Method for cleaning a solar cell surface opening made with a solar etch paste

DOEpatents

Rohatgi, Ajeet; Meemongkolkiat, Vichai

2010-06-22

A thin silicon solar cell having a back dielectric passivation and rear contact with local back surface field is described. Specifically, the solar cell may be fabricated from a crystalline silicon wafer having a thickness from 50 to 500 micrometers. A barrier layer and a dielectric layer are applied at least to the back surface of the silicon wafer to protect the silicon wafer from deformation when the rear contact is formed. At least one opening is made to the dielectric layer. An aluminum contact that provides a back surface field is formed in the opening and on the dielectric layer. The aluminum contact may be applied by screen printing an aluminum paste having from one to 12 atomic percent silicon and then applying a heat treatment at 750 degrees Celsius.

Method for formation of high quality back contact with screen-printed local back surface field

DOEpatents

Rohatgi, Ajeet; Meemongkolkiat, Vichai

2010-11-30

A thin silicon solar cell having a back dielectric passivation and rear contact with local back surface field is described. Specifically, the solar cell may be fabricated from a crystalline silicon wafer having a thickness from 50 to 500 micrometers. A barrier layer and a dielectric layer are applied at least to the back surface of the silicon wafer to protect the silicon wafer from deformation when the rear contact is formed. At least one opening is made to the dielectric layer. An aluminum contact that provides a back surface field is formed in the opening and on the dielectric layer. The aluminum contact may be applied by screen printing an aluminum paste having from one to 12 atomic percent silicon and then applying a heat treatment at 750 degrees Celsius.

The role of the Ti and Mo barrier layer in Ti/Al metallization to AlGaN/GaN heterostructures at identical process conditions: a structural and chemical characterization

NASA Astrophysics Data System (ADS)

Chandran, Narendraraj; Kolakieva, Lilyana; Kakanakov, Roumen; Polychroniadis, E. K.

2015-11-01

The composition and structure of TiAl-based metallizations have been investigated depending on the Ti and Mo barriers. The lowest contact resistivity of 4 × 10-6 Ω.cm2 for a Ti barrier and 7 × 10-6 Ω.cm2 for a Mo barrier is obtained at a Ti/Al ratio of 0.43 after annealing at 800 °C. The scanning transmission electron microscope (STEM) and energy dispersive spectroscopy (EDS) analyses reveal that Mo is not an effective barrier for the Au in-diffusion and Al out of diffusion during annealing. The intensive diffusion processes lead to the formation of the semimetal TiN compound at the interface and intermetallic phases of Au, Al, and Ti, the structure and composition of which depend on the barrier metal.

Analytical Modeling of Triple-Metal Hetero-Dielectric DG SON TFET

NASA Astrophysics Data System (ADS)

Mahajan, Aman; Dash, Dinesh Kumar; Banerjee, Pritha; Sarkar, Subir Kumar

2018-02-01

In this paper, a 2-D analytical model of triple-metal hetero-dielectric DG TFET is presented by combining the concepts of triple material gate engineering and hetero-dielectric engineering. Three metals with different work functions are used as both front- and back gate electrodes to modulate the barrier at source/channel and channel/drain interface. In addition to this, front gate dielectric consists of high-K HfO2 at source end and low-K SiO2 at drain side, whereas back gate dielectric is replaced by air to further improve the ON current of the device. Surface potential and electric field of the proposed device are formulated solving 2-D Poisson's equation and Young's approximation. Based on this electric field expression, tunneling current is obtained by using Kane's model. Several device parameters are varied to examine the behavior of the proposed device. The analytical model is validated with TCAD simulation results for proving the accuracy of our proposed model.

Alternating current transport and dielectric relaxation of nanocrystalline graphene oxide

NASA Astrophysics Data System (ADS)

Zedan, I. T.; El-Menyawy, E. M.

2018-07-01

Graphene oxide (GO) has been synthesized from natural graphite using modified Hummer's method and is subjected to sonication for 1 h. X-ray diffraction (XRD) showed that the prepared GO has nanocrystalline structure with particle size of about 5 nm and high-resolution transmission electron microscope showed that it had a layered structure. The nanocrystalline GO powder was pressed as a disk and the alternating current (AC) electrical conductivity, σAC, and dielectric properties have been investigated in the frequency range 50Hz-5 MHz and temperature range 298-523K using parallel plate spectroscopic technique. Analysis of σ AC as a function of frequency shows that the relation follows Jonscher's universal law with frequency exponent decreases with increasing temperature in which the correlated barrier hopping model is applicable to describe the behavior. The dielectric constant and dielectric loss are studied as functions of frequency and temperature. The dielectric modulus formalism is used for describing the relaxation process in which the relaxation time and its activation energy were evaluated.

Electrical modulus and dielectric behavior of Cr3+ substituted Mg-Zn nanoferrites

NASA Astrophysics Data System (ADS)

Mansour, S. F.; Abdo, M. A.

2017-04-01

The dielectric parameters and ac electrical conductivity of Mg0.8Zn0.2CrxFe2-xO4; (0≤x≤0.025) nanoferrites synthesized citrate-nitrate auto-combustion method were studied using the complex impedance technique in the frequency and temperature ranges 4 Hz-5 MHz and 303-873 K respectively. Hopping of charge carriers plus interfacial polarization could interpret the behaviors of dielectric constant (ε‧), dielectric loss tangent (tanδ) and ac electrical conductivity (σac) with frequency, temperatures and composition. The up-normal behavior observed in tanδ trend with temperatures confirms the presence of relaxation loss (dipoles losses). Correlated barrier hopping (CBH) of electron is the conduction mechanism of the investigated nanoferrites. Cole-Cole plots at different temperatures emphasize the main role of grain and grain boundaries in the properties of the investigated nanoferrites. Cr3+ substitution can control the dielectric parameters and ac electrical conductivity of Mg-Zn nanoferrites making it candidates for versatile applications.

Absolute Thickness Measurements on Coatings Without Prior Knowledge of Material Properties Using Terahertz Energy

NASA Technical Reports Server (NTRS)

Roth, Don J.; Cosgriff, Laura M.; Harder, Bryan; Zhu, Dongming; Martin, Richard E.

2013-01-01

This study investigates the applicability of a novel noncontact single-sided terahertz electromagnetic measurement method for measuring thickness in dielectric coating systems having either dielectric or conductive substrate materials. The method does not require knowledge of the velocity of terahertz waves in the coating material. The dielectric coatings ranged from approximately 300 to 1400 m in thickness. First, the terahertz method was validated on a bulk dielectric sample to determine its ability to precisely measure thickness and density variation. Then, the method was studied on simulated coating systems. One simulated coating consisted of layered thin paper samples of varying thicknesses on a ceramic substrate. Another simulated coating system consisted of adhesive-backed Teflon adhered to conducting and dielectric substrates. Alumina samples that were coated with a ceramic adhesive layer were also investigated. Finally, the method was studied for thickness measurement of actual thermal barrier coatings (TBC) on ceramic substrates. The unique aspects and limitations of this method for thickness measurements are discussed.

Damage free integration of ultralow-k dielectrics by template replacement approach

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, L.; De Gendt, S.; Department of Chemistry, Katholieke Universiteit Leuven, 3000 Leuven

2015-08-31

Cu/low-k integration by conventional damascene approach is becoming increasingly difficult as critical dimensions scale down. An alternative integration scheme is studied based on the replacement of a sacrificial template by ultralow-k dielectric. A metal structure is first formed by patterning a template material. After template removal, a k = 2.31 spin-on type of porous low-k dielectric is deposited onto the patterned metal lines. The chemical and electrical properties of spin-on dielectrics are studied on blanket wafers, indicating that during hard bake, most porogen is removed within few minutes, but 120 min are required to achieve the lowest k-value. The effective dielectric constantmore » of the gap-fill low-k is investigated on a 45 nm ½ pitch Meander-Fork structure, leading to k{sub eff} below 2.4. The proposed approach solves the two major challenges in conventional Cu/low-k damascene integration approach: low-k plasma damage and metal penetration during barrier deposition on porous materials.« less

Molecular dynamics simulations of the dielectric properties of fructose aqueous solutions

NASA Astrophysics Data System (ADS)

Sonoda, Milton T.; Elola, M. Dolores; Skaf, Munir S.

2016-10-01

The static dielectric permittivity and dielectric relaxation properties of fructose aqueous solutions of different concentrations ranging from 1.0 to 4.0 mol l-1 are investigated by means of molecular dynamics simulations. The contributions from intra- and interspecies molecular correlations were computed individually for both the static and frequency-dependent dielectric properties, and the results were compared with the available experimental data. Simulation results in the time- and frequency-domains were analyzed and indicate that the presence of fructose has little effect on the position of the fast, high-frequency (>500 cm-1) components of the dielectric response spectrum. The low-frequency (<0.1 cm-1) components, however, are markedly influenced by sugar concentration. Our analysis indicates that fructose-fructose and fructose-water interactions strongly affect the rotational-diffusion regime of molecular motions in the solutions. Increasing fructose concentration not only enhances sugar-sugar and sugar-water low frequency contributions to the dielectric loss spectrum but also slows down the reorientational dynamics of water molecules. These results are consistent with previous computer simulations carried out for other disaccharide aqueous solutions.

Material Barriers to Diffusive Mixing

NASA Astrophysics Data System (ADS)

Haller, George; Karrasch, Daniel

2017-11-01

Transport barriers, as zero-flux surfaces, are ill-defined in purely advective mixing in which the flux of any passive scalar is zero through all material surfaces. For this reason, Lagrangian Coherent Structures (LCSs) have been argued to play the role of mixing barriers as most repelling, attracting or shearing material lines. These three kinematic concepts, however, can also be defined in different ways, both within rigorous mathematical treatments and within the realm of heuristic diagnostics. This has lead to a an ever-growing number of different LCS methods, each generally identifying different objects as transport barriers. In this talk, we examine which of these methods have actual relevance for diffusive transport barriers. The latter barriers are arguably the practically relevant inhibitors in the mixing of physically relevant tracers, such as temperature, salinity, vorticity or potential vorticity. We demonstrate the role of the most effective diffusion barriers in analytical examples and observational data. Supported in part by the DFG Priority Program on Turbulent Superstructures.

Electrical and dielectric properties of (barium, strontium) titanium trioxide thin film capacitors for ultra-high density dynamic random access memories

NASA Astrophysics Data System (ADS)

Basceri, Cem

The electrical and dielectric properties of fiber-textured, MOCVD (Basb{0.7}Srsb{0.3})TiOsb3 (BST) thin film capacitors appropriate for ultra-large scale integration (ULSI) dynamic random access memory (DRAM) applications have been analyzed. Dielectric relaxation, leakage, resistance degradation, and dielectric response phenomena, within a comprehensive matrix of external and material parameters, have been investigated. The phenomenology of the dielectric response of our BST films has been shown to be well-described by Curie-von Schweidler behavior, although the microscopic origin of this behavior has not been presently agreed upon. The time-dependent polarization behavior has been linked to the dispersion in permittivity with respect to frequency. The leakage current through our BST films has been found to be primarily limited by interfacial Schottky barriers whose properties depend on the electrode material, interface microstructure, and deposition conditions. Its temperature and voltage dependence have been interpreted via a thermionic emission model. Analysis in terms of Schottky-barrier limited current flow gave acceptable values for the cathode barrier height. The results have indicated that our BST films, appropriate for DRAM applications, do not possess depletion layers at the film-electrode interfaces. Instead, they must be considered as depleted of charge carriers across their entire thickness. Resistance degradation has been found to be thermally activated and voltage/field dependent. The results have indicated that there is a film thickness effect, which manifests itself as a decrease in the activation energy with respect to temperature for thicker films. A significant stoichiometry effect on the measured resistance degradation lifetimes has been observed. The analyses of the leakage and capacitance-voltage behaviors for the degraded samples have indicated that a demixing of oxygen vacancies occurs during resistance degradation, which causes the Schottky barrier height to decrease, in agreement with the observed relative shift of the peak capacitance as a function of voltage. For all the film thicknesses and compositions studied, extrapolated resistance degradation lifetimes of our BST films, which were obtained by using an appropriate form, are well above the current benchmark of 10 years at the DRAM operating conditions of 1.6 V and 85sp°C. Above the bulk Curie point (˜300 K), the phenomenological approach, i.e., Landau-Ginzburg-Devonshire (LGD) theory, has been demonstrated to account very well for the observed C-V behavior in our BST films. Furthermore, temperature dependent measurements gave evidence that, as expected, the form of the dielectric behavior changes near the bulk Curie point, but that the phase transition appears for some reason to be frustrated. Film thickness has been established to impact primarily the zero-bias permittivity through a thickness dependence of the first order coefficient of the LGD power series. Our analysis does indicate that if it results from a series-connected interfacial layer, that layer must be a nonlinear dielectric, as must the bulk of the film. The dielectric constant has been found to be composition dependent, reaching its highest values for compositions near the stoichiometric values. Furthermore, film stoichiometry has been established to strongly effect both the first order and third order coefficients of the LGD power series.

Oxidation Resistant Ti-Al-Fe Diffusion Barrier for FeCrAlY Coatings on Titanium Aluminides

NASA Technical Reports Server (NTRS)

Brady, Michael P. (Inventor); Smialke, James L. (Inventor); Brindley, William J. (Inventor)

1996-01-01

A diffusion barrier to help protect titanium aluminide alloys, including the coated alloys of the TiAl gamma + Ti3Al (alpha2) class, from oxidative attack and interstitial embrittlement at temperatures up to at least 1000 C is disclosed. The coating may comprise FeCrAlX alloys. The diffusion barrier comprises titanium, aluminum, and iron in the following approximate atomic percent: Ti-(50-55)Al-(9-20)Fe. This alloy is also suitable as an oxidative or structural coating for such substrates.

Influence of Sn doping in BaSnxTi1-xO3 ceramics on microstructural and dielectric properties

NASA Astrophysics Data System (ADS)

Ansari, Mohd. Azaj; Sreenivas, K.

2018-05-01

BaSnxTi1-x O3 solid solutions with varying Sn content (x = 0.00, 0.05, 0.15, 0.25) prepared by solid state reaction method have been studied for their structural and dielectric properties. X-ray diffraction and Raman spectroscopic analysis show composition induced modifications in the crystallographic structure, and with increasing Sn content the structure changes from tetragonal to cubic structure. The tetragonal distortion decreases with increasing Sn, and the structure becomes purely cubic for x =0.25. Changes in the structure are reflected in the temperature dependent dielectric properties. For increasing Sn content the peak dielectric constant is found to increase and the phase transition temperature (Tc) decreases to lower temperature. The purely cubic structure with x=0.25 shows a diffused phased transition.

Rotation and diffusion of naphthalene on Pt(111)

NASA Astrophysics Data System (ADS)

Kolsbjerg, E. L.; Goubert, G.; McBreen, P. H.; Hammer, B.

2018-03-01

The behavior of naphthalene on Pt(111) surfaces is studied by combining insight from scanning tunneling microscopy (STM) and van der Waals enabled density functional theory. Adsorption, diffusion, and rotation are investigated by a series of variable temperature STM experiments revealing naphthalene ability to rotate on-site with ease with a rotational barrier of 0.69 eV. Diffusion to neighbouring sites is found to be more difficult. The experimental results are in good agreement with the theoretical investigations which confirm that the barrier for diffusion is slightly higher than the one for rotation. The theoretical barriers for rotation and translation are found to be 0.75 and 0.78 eV, respectively. An automatic mapping of the possible diffusion pathways reveals very detailed diffusion paths with many small local minima that would have been practically impossible to find manually. This automated procedure provides detailed insight into the preferred diffusion pathways that are important for our understanding of molecule-substrate interactions.

Quantum angular momentum diffusion of rigid bodies

NASA Astrophysics Data System (ADS)

Papendell, Birthe; Stickler, Benjamin A.; Hornberger, Klaus

2017-12-01

We show how to describe the diffusion of the quantized angular momentum vector of an arbitrarily shaped rigid rotor as induced by its collisional interaction with an environment. We present the general form of the Lindblad-type master equation and relate it to the orientational decoherence of an asymmetric nanoparticle in the limit of small anisotropies. The corresponding diffusion coefficients are derived for gas particles scattering off large molecules and for ambient photons scattering off dielectric particles, using the elastic scattering amplitudes.

Investigation of the dynamics of aqueous proline solutions using neutron scattering and molecular dynamics simulations.

PubMed

Malo de Molina, Paula; Alvarez, Fernando; Frick, Bernhard; Wildes, Andrew; Arbe, Arantxa; Colmenero, Juan

2017-10-18

We applied quasielastic neutron scattering (QENS) techniques to samples with two different contrasts (deuterated solute/hydrogenated solvent and the opposite label) to selectively study the component dynamics of proline/water solutions. Results on diluted and concentrated solutions (31 and 6 water molecules/proline molecule, respectively) were analyzed in terms of the susceptibility and considering a recently proposed model for water dynamics [Arbe et al., Phys. Rev. Lett., 2016, 117, 185501] which includes vibrations and the convolution of localized motions and diffusion. We found that proline molecules not only reduce the average diffusion coefficient of water but also extend the time/frequency range of the crossover region ('cage') between the vibrations and purely diffusive behavior. For the high proline concentration we also found experimental evidence of water heterogeneous dynamics and a distribution of diffusion coefficients. Complementary molecular dynamics simulations show that water molecules start to perform rotational diffusion when they escape the cage regime but before the purely diffusive behavior is established. The rotational diffusion regime is also retarded by the presence of proline molecules. On the other hand, a strong coupling between proline and water diffusive dynamics which persists with decreasing temperature is directly observed using QENS. Not only are the temperature dependences of the diffusion coefficients of both components the same, but their absolute values also approach each other with increasing proline concentration. We compared our results with those reported using other techniques, in particular using dielectric spectroscopy (DS). A simple approach based on molecular hydrodynamics and a molecular treatment of DS allows rationalizing the a priori puzzling inconsistency between QENS and dielectric results regarding the dynamic coupling of the two components. The interpretation proposed is based on general grounds and therefore should be applicable to other biomolecular solutions.

The Drosophila blood-brain barrier: development and function of a glial endothelium.

PubMed

Limmer, Stefanie; Weiler, Astrid; Volkenhoff, Anne; Babatz, Felix; Klämbt, Christian

2014-01-01

The efficacy of neuronal function requires a well-balanced extracellular ion homeostasis and a steady supply with nutrients and metabolites. Therefore, all organisms equipped with a complex nervous system developed a so-called blood-brain barrier, protecting it from an uncontrolled entry of solutes, metabolites or pathogens. In higher vertebrates, this diffusion barrier is established by polarized endothelial cells that form extensive tight junctions, whereas in lower vertebrates and invertebrates the blood-brain barrier is exclusively formed by glial cells. Here, we review the development and function of the glial blood-brain barrier of Drosophila melanogaster. In the Drosophila nervous system, at least seven morphologically distinct glial cell classes can be distinguished. Two of these glial classes form the blood-brain barrier. Perineurial glial cells participate in nutrient uptake and establish a first diffusion barrier. The subperineurial glial (SPG) cells form septate junctions, which block paracellular diffusion and thus seal the nervous system from the hemolymph. We summarize the molecular basis of septate junction formation and address the different transport systems expressed by the blood-brain barrier forming glial cells.

Large discharge-volume, silent discharge spark plug

DOEpatents

Kang, Michael

1995-01-01

A large discharge-volume spark plug for providing self-limiting microdischarges. The apparatus includes a generally spark plug-shaped arrangement of a pair of electrodes, where either of the two coaxial electrodes is substantially shielded by a dielectric barrier from a direct discharge from the other electrode, the unshielded electrode and the dielectric barrier forming an annular volume in which self-terminating microdischarges occur when alternating high voltage is applied to the center electrode. The large area over which the discharges occur, and the large number of possible discharges within the period of an engine cycle, make the present silent discharge plasma spark plug suitable for use as an ignition source for engines. In the situation, where a single discharge is effective in causing ignition of the combustible gases, a conventional single-polarity, single-pulse, spark plug voltage supply may be used.

Schottky barrier SOI-MOSFETs with high-k La2O3/ZrO2 gate dielectrics

PubMed Central

Henkel, C.; Abermann, S.; Bethge, O.; Pozzovivo, G.; Klang, P.; Stöger-Pollach, M.; Bertagnolli, E.

2011-01-01

Schottky barrier SOI-MOSFETs incorporating a La2O3/ZrO2 high-k dielectric stack deposited by atomic layer deposition are investigated. As the La precursor tris(N,N′-diisopropylformamidinato) lanthanum is used. As a mid-gap metal gate electrode TiN capped with W is applied. Processing parameters are optimized to issue a minimal overall thermal budget and an improved device performance. As a result, the overall thermal load was kept as low as 350, 400 or 500 °C. Excellent drive current properties, low interface trap densities of 1.9 × 1011 eV−1 cm−2, a low subthreshold slope of 70-80 mV/decade, and an ION/IOFF current ratio greater than 2 × 106 are obtained. PMID:21461054

Photocatalytic Degradation Effect of μ-Dielectric Barrier Discharge Plasma Treated Titanium Dioxide Nanoparticles on Environmental Contaminant.

PubMed

Seo, Hyeon Jin; Hwang, Ki-Hwan; Na, Young Hoon; Boo, Jin-Hyo

2018-09-01

This study focused on the photocatalytic degradation effect of the μ-dielectric barrier discharge (μ-DBD) plasma treated titanium dioxide (TiO2) nanoparticles on environmental contaminant such as formaldehyde. TiO2 nanoparticles were treated by a μ-DBD plasma source with nitrogen gas. We analyzed the degradation of formaldehyde with the plasma treated TiO2 nanoparticles by UV-visible spectrophotometer (UV-VIS), and demonstrated that the photocatalytic activity of the μ-DBD plasma-treated TiO2 nanoparticles showed significantly high catalytic efficiency rather than without plasma treated TiO2 nanoparticles. Field emission scanning electron microscopes (FE-SEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and water contact angle analyzer were used to measure the effects of photocatalytic degradation for the plasma treated TiO2 nanoparticles.

Influence of oxygen concentration on ethylene removal using dielectric barrier discharge

NASA Astrophysics Data System (ADS)

Takahashi, Katsuyuki; Motodate, Takuma; Takaki, Koichi; Koide, Shoji

2018-01-01

Ethylene gas is decomposed using a dielectric barrier discharge plasma reactor for long-period preservation of fruits and vegetables. The oxygen concentration in ambient gas is varied from 2 to 20% to simulate the fruit and vegetable transport container. The experimental results show that the efficiency of ethylene gas decomposition increases with decreasing oxygen concentration. The reactions of ethylene molecules with ozone are analyzed by Fourier transform infrared spectrometry. The analysis results show that the oxidization process by ozone is later than that by oxygen atoms. The amount of oxygen atoms that contribute to ethylene removal increases with decreasing oxygen concentration because the reaction between oxygen radicals and oxygen molecules is suppressed at low oxygen concentrations. Ozone is completely removed and the energy efficiency of C2H4 removal is increased using manganese dioxide as a catalyst.

Dielectric barrier structure with hollow electrodes and its recoil effect

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yu, Shuang; Chen, Qunzhi; Liu, Jiahui

2015-06-15

A dielectric barrier structure with hollow electrodes (HEDBS), in which gas flow oriented parallel to the electric field, was proposed. Results showed that with this structure, air can be effectively ignited, forming atmospheric low temperature plasma, and the proposed HEDBS could achieve much higher electron density (5 × 10{sup 15}/cm{sup 3}). It was also found that the flow condition, including outlet diameter and flow rate, played a key role in the evolution of electron density. Optical emission spectroscopy diagnostic results showed that the concentration of reactive species had the same variation trend as the electron density. The simulated distribution of discharge gasmore » flow indicated that the HEDBS had a strong recoil effect on discharge gas, and could efficiently promote generating electron density as well as reactive species.« less

Consumption of the electric power inside silent discharge reactors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yehia, Ashraf, E-mail: yehia30161@yahoo.com

An experimental study was made in this paper to investigate the relation between the places of the dielectric barriers, which cover the surfaces of the electrodes in the coaxial cylindrical reactors, and the rate of change of the electric power that is consumed in forming silent discharges. Therefore, silent discharges have been formed inside three coaxial cylindrical reactors. The dielectric barriers in these reactors were pasted on both the internal surface of the outer electrode in the first reactor and the external surface of the inner electrode in the second reactor as well as the surfaces of the two electrodesmore » in the third reactor. The reactor under study has been fed by atmospheric air that flowed inside it with a constant rate at normal temperature and pressure, in parallel with the application of a sinusoidal ac voltage between the electrodes of the reactor. The electric power consumed in forming the silent discharges inside the three reactors was measured as a function of the ac peak voltage. The validity of the experimental results was investigated by applying Manley's equation on the same discharge conditions. The results have shown that the rate of consumption of the electric power relative to the ac peak voltage per unit width of the discharge gap improves by a ratio of either 26.8% or 80% or 128% depending on the places of the dielectric barriers that cover the surfaces of the electrodes inside the three reactors.« less

Electric-field-enhanced nutrient consumption in dielectric biomaterials that contain anchorage-dependent cells.

PubMed

Belfiore, Laurence A; Floren, Michael L; Belfiore, Carol J

2012-02-01

This research contribution addresses electric-field stimulation of intra-tissue mass transfer and cell proliferation in viscoelastic biomaterials. The unsteady state reaction-diffusion equation is solved according to the von Kármán-Pohlhausen integral method of boundary layer analysis when nutrient consumption and tissue regeneration occur in response to harmonic electric potential differences across a parallel-plate capacitor in a dielectric-sandwich configuration. The partial differential mass balance with diffusion and electro-kinetic consumption contains the Damköhler (Λ(2)) and Deborah (De) numbers. Zero-field and electric-field-sensitive Damköhler numbers affect nutrient boundary layer growth. Diagonal elements of the 2nd-rank diffusion tensor are enhanced in the presence of weak electric fields, in agreement with the formalism of equilibrium and nonequilibrium thermodynamics. Induced dipole polarization density within viscoelastic biomaterials is calculated via the real and imaginary components of the complex dielectric constant, according to the Debye equation, to quantify electro-kinetic stimulation. Rates of nutrient consumption under zero-field conditions are described by third-order kinetics that include local mass densities of nutrients, oxygen, and attached cells. Thinner nutrient boundary layers are stabilized at shorter dimensionless diffusion times when the zero-field intra-tissue Damköhler number increases above its initial-condition-sensitive critical value [i.e., {Λ(2)(zero-field)}(critical)≥53, see Eq. (23)], such that the biomaterial core is starved of essential ingredients required for successful proliferation. When tissue regeneration occurs above the critical electric-field-sensitive intra-tissue Damköhler number, the electro-kinetic contribution to nutrient consumption cannot be neglected. The critical electric-field-sensitive intra-tissue Damköhler number is proportional to the Deborah number. Copyright © 2011 Elsevier B.V. All rights reserved.

Oxygen vacancy diffusion in bulk SrTiO3 from density functional theory calculations

DOE PAGES

Zhang, Lipeng; Liu, Bin; Zhuang, Houlong; ...

2016-04-01

Point defects and point defect diffusion contribute significantly to the properties of perovskite materials. However, even for the prototypical case of oxygen vacancies in SrTiO 3 (STO), predictions vary widely. Here we present a comprehensive and systematic study of the diffusion barriers for this material. We use density functional theory (DFT) and assess the role of different cell sizes, density functionals, and charge states. Our results show that vacancy-induced octahedral rotations, which are limited by the boundary conditions of the supercell, can significantly affect the computed oxygen vacancy diffusion energy barrier. The diffusion energy barrier of a charged oxygen vacancymore » is lower than that of a neutral one. Unexpectedly, we find that with increasing supercell size, the effects of the oxygen vacancy charge state, the type of DFT exchange and correlation functional on the energy barrier diminish, and the different DFT predictions asymptote to a value in the range of 0.39-0.49 eV. This work provides important insight and guidance that should be considered for investigations of point defect diffusion in other perovskite materials and in oxide superlattices.« less

Copper diffusion in Ti Si N layers formed by inductively coupled plasma implantation

NASA Astrophysics Data System (ADS)

Ee, Y. C.; Chen, Z.; Law, S. B.; Xu, S.; Yakovlev, N. L.; Lai, M. Y.

2006-11-01

Ternary Ti-Si-N refractory barrier films of 15 nm thick was prepared by low frequency, high density, inductively coupled plasma implantation of N into TixSiy substrate. This leads to the formation of Ti-N and Si-N compounds in the ternary film. Diffusion of copper in the barrier layer after annealing treatment at various temperatures was investigated using time-of-flight secondary ion mass spectrometer (ToF-SIMS) depth profiling, X-ray diffractometer (XRD), field emission scanning electron microscopy (FESEM), energy dispersive X-ray (EDX) and sheet resistance measurement. The current study found that barrier failure did not occur until 650 °C annealing for 30 min. The failure occurs by the diffusion of copper into the Ti-Si-N film to form Cu-Ti and Cu-N compounds. FESEM surface morphology and EDX show that copper compounds were formed on the ridge areas of the Ti-Si-N film. The sheet resistance verifies the diffusion of Cu into the Ti-Si-N film; there is a sudden drop in the resistance with Cu compound formation. This finding provides a simple and effective method of monitoring Cu diffusion in TiN-based diffusion barriers.

Dispersion Relations for Proton Relaxation in Solid Dielectrics

NASA Astrophysics Data System (ADS)

Kalytka, V. A.; Korovkin, M. V.

2017-04-01

Frequency-temperature spectra of the complex permittivity are studied for proton semiconductors and dielectrics using the methods of a quasi-classical kinetic theory of dielectric relaxation (the Boltzmann kinetic theory) in the linear approximation with respect to the polarizing field in the radio frequency range at temperatures T = 50-450 K. The effect of the quantum transitions of protons on the Debye dispersion relations is taken into account for crystals with hydrogen bonds (HBC) at low temperatures (50-100 K). The diffusion coefficients and the mobilities under electrical transfer of protons in the HBCs are constructed at high temperatures (100-350 K) in a non-linear approximation with respect to the polarizing field.

Real-time dielectric studies of polymerizing systems

NASA Astrophysics Data System (ADS)

Williams, G.; Smith, I. K.; Holmes, P. A.; Varma, S.

1999-03-01

The use of real-time dielectric relaxation spectroscopy (DRS) for monitoring changes in molecular mobility during reaction for thermosetting systems is described together with phenomenological and molecular theories of the time-dependent relaxation functions that are involved. Reduced molecular mobility normally leads to the diffusion control of a reaction and ultimately to glass formation at the polymerization temperature 0953-8984/11/10A/004/img7. We present new DRS results for a boroxine/epoxide system that show glass formation below a `floor temperature' 0953-8984/11/10A/004/img8 and very different behaviour above 0953-8984/11/10A/004/img8, when the dielectric properties become independent of time and an elastomer is formed.

A radio frequency coaxial feedthrough

DOEpatents

Owens, T.L.

1987-12-07

An improved radio frequency coaxial transmission line vacuum feedthrough is provided based on the use of a half-wavelength annular dielectric pressure barrier disk, or multiple disks comprising an effective half wavelength structure to eliminate reflection from the barrier surfaces. Gas-tight seals are formed about the outer and inner diameter surfaces of the barrier disk using a sealing technique which generates radial forces sufficient to form seals by forcing the conductor walls against the surfaces of the barrier disks in a manner which does not deform the radii of the inner and outer conductors, thereby preventing enhancement of the electric field at the barrier faces which limits the voltage and power handling capabilities of a feedthrough.

Radio frequency coaxial feedthrough

DOEpatents

Owens, Thomas L.

1989-01-17

An improved radio frequency coaxial transmission line vacuum feed-through provided based on the use of a half-wavelength annular dielectric pressure barrier disk, or multiple disks comprising an effective half wavelength structure to eliminate reflections from the barrier surfaces. Gas-tight seals are formed about the outer and inner diameter surfaces of the barrier disk using a sealing technique which generates radial forces sufficient to form seals by forcing the conductor walls against the surfaces of the barrier disks in a manner which does not deform the radii of the inner and outer conductors, thereby preventing enhancement of the electric field at the barrier faces which limits voltage and power handling capabilities of a feedthrough.

Two breakdown mechanisms in ultrathin alumina barrier magnetic tunnel junctions

NASA Astrophysics Data System (ADS)

Oliver, Bryan; Tuttle, Gary; He, Qing; Tang, Xuefei; Nowak, Janusz

2004-02-01

Two breakdown mechanisms are observed in magnetic tunnel junctions having an ultrathin alumina barrier. The two breakdown mechanisms manifest themselves differently when considering large ensembles of nominally identical devices under different stress conditions. The results suggest that one type of breakdown occurs because of the intrinsic breakdown of a well-formed oxide barrier that can be described by the E model of dielectric breakdown. The other is an extrinsic breakdown related to defects in the barrier rather than the failure of the oxide integrity. The characteristic of extrinsic breakdown suggests that a pre-existing pinhole in the barriers grows in area by means of dissipative (Joule) heating and/or an electric field across the pinhole circumference.

Origin of colossal permittivity in BaTiO3 via broadband dielectric spectroscopy

NASA Astrophysics Data System (ADS)

Han, Hyuksu; Voisin, Christophe; Guillemet-Fritsch, Sophie; Dufour, Pascal; Tenailleau, Christophe; Turner, Christopher; Nino, Juan C.

2013-01-01

Barium titanate (BT) ceramics with Ba/Ti ratios of 0.95 and 1.00 were synthesized using spark plasma sintering (SPS) technique. Dielectric spectroscopy (frequency range from 40 Hz to 1 MHz and temperature range from 300 K to 30 K) was performed on those ceramics (SPS BT). SPS BT showed extremely high permittivity up to ˜105, which can be referred to as colossal permittivity, with relatively low dielectric loss of ˜0.05. Data analyses following Debye relaxation and universal dielectric response models indicate that the origin of colossal permittivity in BT ceramics is the result of a hopping polaron within semiconducting grains in combination with interfacial polarization at the insulating grain boundary. Furthermore, the contributions of each polarization mechanism to the colossal permittivity in SPS BT, such as a hopping polarization, internal barrier layer capacitance effect, and electrode effect, were estimated.

Impedance and electric modulus approaches to investigate four origins of giant dielectric constant in CaCu3Ti4O12 ceramics

NASA Astrophysics Data System (ADS)

Yuan, Wen-Xiang

2012-03-01

The frequency dependence of electric modulus of polycrystalline CaCu3Ti4O12 (CCTO) ceramics has been investigated. The experimental data have also been analyzed in the complex plane of impedance and electric modulus, and a suitable equivalent circuit has been proposed to explain the dielectric response. Four dielectric responses are first distinguished in the impedance and modulus spectroscopies. The results are well interpreted in terms of a triple insulating barrier capacitor model. Using this model, these four dielectric relaxations are attributed to the domain, domain-boundary, grain-boundary, and surface layer effects with three Maxwell-Wagner relaxations. Moreover, the values of the resistance and capacitance of bulk CCTO phase, domain-boundary, grain-boundary and surface layer contributions have been calculated directly from the peak characteristics of spectroscopic plots.

Temperature-dependent ac conductivity and dielectric response of vanadium doped CaCu3Ti4O12 ceramic

NASA Astrophysics Data System (ADS)

Sen, A.; Maiti, U. N.; Thapa, R.; Chattopadhyay, K. K.

2011-09-01

Successful incorporation of vanadium dopant within the giant dielectric material CaCu 3Ti 4O12 (CCTO) through a conventional solid-state sintering process is achieved and its influence on the dielectric as well as electrical properties as a function of temperature and frequency is reported here. Proper crystalline phase formation together with dopant induced lattice constant shrinkage was confirmed through X-ray diffraction. The temperature dependence of the dielectric constant at different constant frequencies was investigated. We infer that the correlated barrier hopping (CBH) model is dominant in the conduction mechanism of the ceramic as per the temperature-dependent ac conductivity measurements. The electronic parameters such as density of the states at the Fermi level, N( E f) and hopping distance, R ω of the ceramic were also calculated using this model.

Vacuum-barrier window for wide-bandwidth high-power microwave transmission

DOEpatents

Caplan, M.; Shang, C.C.

1996-08-20

A vacuum output window comprises a planar dielectric material with identical systems of parallel ridges and valleys formed in opposite surfaces. The valleys in each surface neck together along parallel lines in the bulk of the dielectric. Liquid-coolant conduits are disposed linearly along such lines of necking and have water or even liquid nitrogen pumped through to remove heat. The dielectric material can be alumina, or its crystalline form, sapphire. The electric-field of a broadband incident megawatt millimeter-wave radio frequency energy is oriented perpendicular to the system of ridges and valleys. The ridges, about one wavelength tall and with a period of about one wavelength, focus the incident energy through in ribbons that squeeze between the liquid-coolant conduits without significant losses over very broad bands of the radio spectrum. In an alternative embodiment, the liquid-coolant conduits are encased in metal within the bulk of the dielectric. 4 figs.

Vacuum-barrier window for wide-bandwidth high-power microwave transmission

DOEpatents

Caplan, Malcolm; Shang, Clifford C.

1996-01-01

A vacuum output window comprises a planar dielectric material with identical systems of parallel ridges and valleys formed in opposite surfaces. The valleys in each surface neck together along parallel lines in the bulk of the dielectric. Liquid-coolant conduits are disposed linearly along such lines of necking and have water or even liquid nitrogen pumped through to remove heat. The dielectric material can be alumina, or its crystalline form, sapphire. The electric-field of a broadband incident megawatt millimeter-wave radio frequency energy is oriented perpendicular to the system of ridges and valleys. The ridges, about one wavelength tall and with a period of about one wavelength, focus the incident energy through in ribbons that squeeze between the liquid-coolant conduits without significant losses over very broad bands of the radio spectrum. In an alternative embodiment, the liquid-coolant conduits are encased in metal within the bulk of the dielectric.

The Impact of Dielectric Material and Temperature on Dielectric Charging in RF MEMS Capacitive Switches

NASA Astrophysics Data System (ADS)

Papaioannou, George

The present work attempts to provide a better insight on the dielectric charging in RF-MEMS capacitive switches that constitutes a key issue limiting parameter of their commercialization. The dependence of the charging process on the nature of dielectric materials widely used in these devices, such as SiO2, Si3N4, AlN, Al2O3, Ta2O5, HfO2, which consist of covalent or ionic bonds and may exhibit piezoelectric properties is discussed taking into account the effect of deposition conditions and resulting material stoichiometry. Another key issue parameter that accelerates the charging and discharging processes by providing enough energy to trapped charges to be released and to dipoles to overcome potential barriers and randomize their orientation is the temperature will be investigated too. Finally, the effect of device structure will be also taken into account.

Application Of Ti-Based Self-Formation Barrier Layers To Cu Dual-Damascene Interconnects

NASA Astrophysics Data System (ADS)

Ito, Kazuhiro; Ohmori, Kazuyuki; Kohama, Kazuyuki; Mori, Kenichi; Maekawa, Kazuyoshi; Asai, Koyu; Murakami, Masanori

2010-11-01

Cu interconnects have been used extensively in ULSI devices. However, large resistance-capacitance delay and poor device reliability have been critical issues as the device feature size has reduced to nanometer scale. In order to achieve low resistance and high reliability of Cu interconnects, we have applied a thin Ti-based self-formed barrier (SFB) using Cu(Ti) alloy seed to 45nm-node dual damascene interconnects and evaluated its performance. The line resistance and via resistance decreased significantly, compared with those of conventional Ta/TaN barriers. The stress migration performance was also drastically improved using the SFB process. A performance of time dependent dielectric breakdown revealed superior endurance. These results suggest that the Ti-based SFB process is one of the most promising candidates for advanced Cu interconnects. TEM and X-ray photoelectron spectroscopy observations for characterization of the Ti-based SFB structure were also performed. The Ti-based SFB consisted of mainly amorphous Ti oxides. Amorphous or crystalline Ti compounds such as TiC, TiN, and TiSi formed beneath Cu alloy films, and the formation varied with dielectric.

Time-dependent one-dimensional simulation of atmospheric dielectric barrier discharge in N2/O2/H2O using COMSOL Multiphysics

NASA Astrophysics Data System (ADS)

Sohbatzadeh, F.; Soltani, H.

2018-04-01

The results of time-dependent one-dimensional modelling of a dielectric barrier discharge (DBD) in a nitrogen-oxygen-water vapor mixture at atmospheric pressure are presented. The voltage-current characteristics curves and the production of active species are studied. The discharge is driven by a sinusoidal alternating high voltage-power supply at 30 kV with frequency of 27 kHz. The electrodes and the dielectric are assumed to be copper and quartz, respectively. The current discharge consists of an electrical breakdown that occurs in each half-period. A detailed description of the electron attachment and detachment processes, surface charge accumulation, charged species recombination, conversion of negative and positive ions, ion production and losses, excitations and dissociations of molecules are taken into account. Time-dependent one-dimensional electron density, electric field, electric potential, electron temperature, densities of reactive oxygen species (ROS) and reactive nitrogen species (RNS) such as: O, O-, O+, {O}2^{ - } , {O}2^{ + } , O3, {N}, {N}2^{ + } , N2s and {N}2^{ - } are simulated versus time across the gas gap. The results of this work could be used in plasma-based pollutant degradation devices.

The Influence of Relative Humidity on Dielectric Barrier Discharge Plasma Flow Control Actuator Performance

NASA Astrophysics Data System (ADS)

Wicks, M.; Thomas, F. O.; Corke, T. C.; Patel, M.

2012-11-01

Dielectric barrier discharge (DBD) plasma actuators possess numerous advantages for flow control applications and have been the focus of several previous studies. Most work has been performed in relatively pristine laboratory settings. In actual flow control applications, however, it is essential to assess the impact of various environmental influences on actuator performance. As a first effort toward assessing a broad range of environmental effects on DBD actuator performance, the influence of relative humidity (RH) is considered. Actuator performance is quantified by force balance measurements of reactive thrust while RH is systematically varied via an ultrasonic humidifier. The DBD plasma actuator assembly, force balance, and ultrasonic humidifier are all contained inside a large, closed test chamber instrumented with RH and temperature sensors in order to accurately estimate the average RH at the actuator. Measurements of DBD actuator thrust as a function of RH for several different applied voltage regimes and dielectric materials and thicknesses are presented. Based on these results, several important design recommendations are made. This work was supported by Innovative Technology Applications Company (ITAC), LLC under a Small Business Innovation Research (SBIR) Phase II Contract No. N00014-11-C-0267 issued by the U.S. Department of the Navy.

Indoor air purification by dielectric barrier discharge combined with ionic wind: physical and microbiological investigations

NASA Astrophysics Data System (ADS)

Timmermann, E.; Prehn, F.; Schmidt, M.; Höft, H.; Brandenburg, R.; Kettlitz, M.

2018-04-01

A non-thermal plasma source based on a surface dielectric barrier discharge (DBD) is developed for purification of recirculating air in operating theatres in hospitals. This is a challenging application due to high flow rates, short treatment times and the low threshold for ozone in the ventilated air. Therefore, the surface DBD was enhanced in order to generate an ionic wind, which can deflect and thus, filter out airborne microorganisms. Electrical and gas diagnostics as well as microbiological experiments were performed in a downscaled plasma source under variation of various electrical parameters, but application-oriented airflow velocity and humidity. The dependence of electrical power and ozone concentration as well as charged particles in the plasma treated air on frequency, voltage and relative humidity is presented and discussed. The presence of humidity causes a more conductive dielectric surface and thus a weaker plasma formation, especially at low frequency. The airborne test bacteria, Escherichia coli, showed significant effect to plasma treatment (up to 20% reduction) and to plasma with ionic wind (up to 90% removal); especially a configuration with 70% removal and an accompanying ozone concentration of only 360 ppb is promising for future application.

Pulsed dielectric barrier discharge for Bacillus subtilis inactivation in water

NASA Astrophysics Data System (ADS)

Hernández-Arias, A. N.; Rodríguez-Méndez, B. G.; López-Callejas, R.; Valencia-Alvarado, R.; Mercado-Cabrera, A.; Peña-Eguiluz, R.; Barocio, S. R.; Muñoz-Castro, A. E.; de la Piedad Beneitez, A.

2012-06-01

The inactivation of Bacillus subtilis bacteria in water has been experimentally studied by means of a pulsed dielectric barrier discharge (PDBD) in a coaxial reactor endowed with an alumina dielectric. The plasma source is capable of operating at atmospheric pressure with gas, water or hybrid gas-liquid media at adjustable 25 kV pulses, 30 μs long and at a 500 Hz frequency. In order to evaluate the inactivation efficiency of the system, a set of experiments were designed on the basis of oxygen flow control. The initial data have showed a significant bacterial rate reduction of 103-107 CFU/mL. Additional results proved that applying an oxygen flow for a few seconds during the PDBD treatment inactivates the Bacillus subtilis population with 99.99% effectiveness. As a reference, without gas flow but with the same exposure times, this percentage is reduced to ~90%. The analysis of the relationship between inactivation rate and chemical species in the discharge has been carried out using optical emission spectroscopy as to identifying the main reactive species. Reactive oxygen species such as atomic oxygen and ozone tuned out to be the dominant germicidal species. Some proposed inactivation mechanisms of this technique are discussed.

Modeling of a Ne/Xe dielectric barrier discharge excilamp for improvement of VUV radiation production

NASA Astrophysics Data System (ADS)

Khodja, K.; Belasri, A.; Loukil, H.

2017-08-01

This work is devoted to excimer lamp efficiency optimization by using a homogenous discharge model of a dielectric barrier discharge in a Ne-Xe mixture. The model includes the plasma chemistry, electrical circuit, and Boltzmann equation. In this paper, we are particularly interested in the electrical and kinetic properties and light output generated by the DBD. Xenon is chosen for its high luminescence in the range of vacuum UV radiation around 173 nm. Our study is motivated by interest in this type of discharge in many industrial applications, including the achievement of high light output lamps. In this work, we used an applied sinusoidal voltage, frequency, gas pressure, and concentration in the ranges of 2-8 kV, 10-200 kHz, 100-800 Torr, and 10-50%, respectively. The analyzed results concern the voltage V p across the gap, the dielectric voltage V d, the discharge current I, and the particles densities. We also investigated the effect of the electric parameters and xenon concentration on the lamp efficiency. This investigation will allow one to find out the appropriate parameters for Ne/Xe DBD excilamps to improve their efficiency.

Ion-barrier for memristors/ReRAM and methods thereof

DOEpatents

Haase, Gad S.

2017-11-28

The present invention relates to memristive devices including a resistance-switching element and a barrier element. In particular examples, the barrier element is a monolayer of a transition metal chalcogenide that sufficiently inhibits diffusion of oxygen atoms or ions out of the switching element. As the location of these atoms and ions determine the state of the device, inhibiting diffusion would provide enhanced state retention and device reliability. Other types of barrier elements, as well as methods for forming such elements, are described herein.

Photoinduced Domain Pattern Transformation in Ferroelectric-Dielectric Superlattices

DOE PAGES

Ahn, Youngjun; Park, Joonkyu; Pateras, Anastasios; ...

2017-07-31

The nanodomain pattern in ferroelectric/dielectric superlattices transforms to a uniform polarization state under above-bandgap optical excitation. X-ray scattering reveals a disappearance of domain diffuse scattering and an expansion of the lattice. Furthermore, the reappearance of the domain pattern occurs over a period of seconds at room temperature, suggesting a transformation mechanism in which charge carriers in long-lived trap states screen the depolarization field. A Landau-Ginzburg-Devonshire model predicts changes in lattice parameter and a critical carrier concentration for the transformation.

Photoinduced Domain Pattern Transformation in Ferroelectric-Dielectric Superlattices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ahn, Youngjun; Park, Joonkyu; Pateras, Anastasios

2017-07-01

The nanodomain pattern in ferroelectric/dielectric superlattices transforms to a uniform polarization state under above-bandgap optical excitation. X-ray scattering reveals a disappearance of domain diffuse scattering and an expansion of the lattice. The reappearance of the domain pattern occurs over a period of seconds at room temperature, suggesting a transformation mechanism in which charge carriers in long-lived trap states screen the depolarization field. A Landau-Ginzburg-Devonshire model predicts changes in lattice parameter and a critical carrier concentration for the transformation.

Self-learning kinetic Monte Carlo simulations of diffusion in ferromagnetic α -Fe–Si alloys

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nandipati, Giridhar; Jiang, Xiujuan; Vemuri, Rama S.

Diffusion in α-Fe-Si alloys is studied using AKSOME, an on-lattice self-learning KMC code, in the ferromagnetic state. Si diffusivity in the α-Fe matrix were obtained with and without the magnetic disorder in various temperature ranges. In addition we studied vacancy diffusivity in ferromagnetic α-Fe at various Si concentrations up to 12.5at.% in the temperature range of 350–550 K. The results were compared with available experimental and theoretical values in the literature. Local Si-atom dependent activation energies for vacancy hops were calculated using a broken-model and were stored in a database. The migration barrier and prefactors for Si-diffusivity were found tomore » be in reasonable agreement with available modeling results in the literature. Magnetic disorder has a larger effect on the prefactor than on the migration barrier. Prefactor was approximately an order of magnitude and the migration barrier a tenth of an electron-volt higher with magnetic disorder when compared to a fully ferromagnetic ordered state. In addition, the correlation between various have a larger effect on the Si-diffusivity extracted in various temperature range than the magnetic disorder. In the case of vacancy diffusivity, the migration barrier more or less remained constant while the prefactor decreased with increasing Si concentration in the disordered or A2-phase of Fe-Si alloy. Important vacancy-Si/Fe atom exchange processes and their activation barriers were also identified and discuss the effect of energetics on the formation of ordered phases in Fe-Si alloys.« less

Significantly Elevated Dielectric and Energy Storage Traits in Boron Nitride Filled Polymer Nano-composites with Topological Structure

NASA Astrophysics Data System (ADS)

Feng, Yefeng; Zhang, Jianxiong; Hu, Jianbing; Li, Shichun; Peng, Cheng

2018-03-01

Interface induced polarization has a prominent influence on dielectric properties of 0-3 type polymer based composites containing Si-based semi-conductors. The disadvantages of composites were higher dielectric loss, lower breakdown strength and energy storage density, although higher permittivity was achieved. In this work, dielectric, conductive, breakdown and energy storage properties of four nano-composites have been researched. Based on the cooperation of fluoropolymer/alpha-SiC layer and fluoropolymer/hexagonal-BN layer, it was confirmed constructing the heterogeneous layer-by-layer composite structure rather than homogeneous mono-layer structure could significantly reduce dielectric loss, promote breakdown strength and increase energy storage density. The former worked for a larger dielectric response and the latter layer acted as a robust barrier of charge carrier transfer. The best nano-composite could possess a permittivity of 43@100 Hz ( 3.3 times of polymer), loss of 0.07@100 Hz ( 37% of polymer), discharged energy density of 2.23 J/cm3@249 kV/cm ( 10 times of polymer) and discharged energy efficiency of 54%@249 kV/cm ( 5 times of polymer). This work might enlighten a facile route to achieve the promising high energy storage composite dielectrics by constructing the layer-by-layer topological structure.

Cluster synthesis of monodisperse rutile-TiO2 nanoparticles and dielectric TiO2-vinylidene fluoride oligomer nanocomposites

DOE Office of Scientific and Technical Information (OSTI.GOV)

Balasubramanian, B; Kraemer, KL; Valloppilly, SR

2011-09-13

The embedding of oxide nanoparticles in polymer matrices produces a greatly enhanced dielectric response by combining the high dielectric strength and low loss of suitable host polymers with the high electric polarizability of nanoparticles. The fabrication of oxide-polymer nanocomposites with well-controlled distributions of nanoparticles is, however, challenging due to the thermodynamic and kinetic barriers between the polymer matrix and nanoparticle fillers. In the present study, monodisperse TiO2 nanoparticles having an average particle size of 14.4 nm and predominant rutile phase were produced using a cluster-deposition technique without high-temperature thermal annealing and subsequently coated with uniform vinylidene fluoride oligomer (VDFO) moleculesmore » using a thermal evaporation source, prior to deposition as TiO2-VDFO nanocomposite films on suitable substrates. The molecular coatings on TiO2 nanoparticles serve two purposes, namely to prevent the TiO2 nanoparticles from contacting each other and to couple the nanoparticle polarization to the matrix. Parallel-plate capacitors made of TiO2-VDFO nanocomposite film as the dielectric exhibit minimum dielectric dispersion and low dielectric loss. Dielectric measurements also show an enhanced effective dielectric constant in TiO2-VDFO nanocomposites as compared to that of pure VDFO. This study demonstrates for the first time a unique electroactive particle coating in the form of a ferroelectric VDFO that has high-temperature stability as compared to conventionally used polymers for fabricating dielectric oxide-polymer nanocomposites.« less

Powder XRD and dielectric studies of gel grown calcium pyrophosphate crystals

NASA Astrophysics Data System (ADS)

Parekh, Bharat; Parikh, Ketan; Joshi, Mihir

2013-06-01

Formation of calcium pyrophosphate dihydrate (CPPD) crystals in soft tissues such as cartilage, meniscus and synovial tissue leads to CPPD deposition diseases. The appearance of these crystals in the synovial fluid can give rise to an acute arthritic attack with pain and inflammation of the joints, a condition called pseudo-gout. The growth of CPP crystals has been carried out, in the present study, using the single diffusion gel growth technique, which can broadly mimic in vitro the condition in soft tissues. The crystals were characterized by different techniques. The FTIR study revealed the presence of various functional groups. Powder XRD study was also carried out to verify the crystal structure. The dielectric study was carried out at room temperature by applying field of different frequency from 500 Hz to 1 MHz. The dielectric constant, dielectric loss and a.c. resistivity decreased as frequency increased, whereas the a.c. conductivity increased as frequency increased.

Dielectric properties of calicum and barium-doped strontium titanate

NASA Astrophysics Data System (ADS)

Tung, Li-Chun

Dielectric properties of high quality polycrystalline Ca- and Ba-doped SrTiO3 perovskites are studied by means of dielectric constant, dielectric loss and ferroelectric hysteresis measurements. Low frequency dispersion of the dielectric constant is found to be very small and a simple relaxor model may not be able to explain its dielectric behavior. Relaxation modes are found in these samples, and they are all interpreted as thermally activated Bipolar re-orientation across energy barriers. In Sr1- xCaxTiO3 (x = 0--0.3), two modes are found associated with different relaxation processes, and the concentration dependence implies a competition between these processes. In Sr1-xBa xTiO3 (x = 0--0.25), relaxation modes are found to be related to the structural transitions, and the relaxation modes persist at low doping levels (x < 0.1), where structural ordering is not observed by previous neutron scattering studies. The validity of well-accepted Barret formula is discussed and two of the well-accepted models, anharmonic oscillator model and transverse Ising model, are found to be equivalent. Both of the Ca and Ba systems can be understood qualitatively within the concept of transverse Ising model.

Enhancing dielectric permittivity for energy-storage devices through tricritical phenomenon

PubMed Central

Gao, Jinghui; Wang, Yan; Liu, Yongbin; Hu, Xinghao; Ke, Xiaoqin; Zhong, Lisheng; He, Yuting; Ren, Xiaobing

2017-01-01

Although dielectric energy-storing devices are frequently used in high voltage level, the fast growing on the portable and wearable electronics have been increasing the demand on the energy-storing devices at finite electric field strength. This paper proposes an approach on enhancing energy density under low electric field through compositionally inducing tricriticality in Ba(Ti,Sn)O3 ferroelectric material system with enlarged dielectric response. The optimal dielectric permittivity at tricritical point can reach to εr = 5.4 × 104, and the associated energy density goes to around 30 mJ/cm3 at the electric field of 10 kV/cm, which exceeds most of the selected ferroelectric materials at the same field strength. The microstructure nature for such a tricritical behavior shows polarization inhomogeneity in nanometeric scale, which indicates a large polarizability under external electric field. Further phenomenological Landau modeling suggests that large dielectric permittivity and energy density can be ascribed to the vanishing of energy barrier for polarization altering caused by tricriticality. Our results may shed light on developing energy-storing dielectrics with large permittivity and energy density at low electric field. PMID:28098249

A comparative study of nano-SiO2 and nano-TiO2 fillers on proton conductivity and dielectric response of a silicotungstic acid-H3PO4-poly(vinyl alcohol) polymer electrolyte.

PubMed

Gao, Han; Lian, Keryn

2014-01-08

The effects of nano-SiO2 and nano-TiO2 fillers on a thin film silicotungstic acid (SiWA)-H3PO4-poly(vinyl alcohol) (PVA) proton conducting polymer electrolyte were studied and compared with respect to their proton conductivity, environmental stability, and dielectric properties, across a temperature range from 243 to 323 K. Three major effects of these fillers have been identified: (a) barrier effect; (b) intrinsic dielectric constant effect; and (c) water retention effect. Dielectric analyses were used to differentiate these effects on polymer electrolyte-enabled capacitors. Capacitor performance was correlated to electrolyte properties through dielectric constant and dielectric loss spectra. Using a single-ion approach, proton density and proton mobility of each polymer electrolyte were derived as a function of temperature. The results allow us to deconvolute the different contributions to proton conductivity in SiWA-H3PO4-PVA-based electrolytes, especially in terms of the effects of fillers on the dynamic equilibrium of free protons and protonated water in the electrolytes.

Polymer/metal oxide hybrid dielectrics for low voltage field-effect transistors with solution-processed, high-mobility semiconductors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Held, Martin; Schießl, Stefan P.; Gannott, Florentina

Transistors for future flexible organic light-emitting diode (OLED) display backplanes should operate at low voltages and be able to sustain high currents over long times without degradation. Hence, high capacitance dielectrics with low surface trap densities are required that are compatible with solution-processable high-mobility semiconductors. Here, we combine poly(methyl methacrylate) (PMMA) and atomic layer deposition hafnium oxide (HfO{sub x}) into a bilayer hybrid dielectric for field-effect transistors with a donor-acceptor polymer (DPPT-TT) or single-walled carbon nanotubes (SWNTs) as the semiconductor and demonstrate substantially improved device performances for both. The ultra-thin PMMA layer ensures a low density of trap states atmore » the semiconductor-dielectric interface while the metal oxide layer provides high capacitance, low gate leakage and superior barrier properties. Transistors with these thin (≤70 nm), high capacitance (100–300 nF/cm{sup 2}) hybrid dielectrics enable low operating voltages (<5 V), balanced charge carrier mobilities and low threshold voltages. Moreover, the hybrid layers substantially improve the bias stress stability of the transistors compared to those with pure PMMA and HfO{sub x} dielectrics.« less

Dielectric Barrier Discharge Plasma Actuator for Flow Control

NASA Technical Reports Server (NTRS)

Opaits, Dmitry, F.

2012-01-01

This report is Part II of the final report of NASA Cooperative Agreement contract no. NNX07AC02A. It includes a Ph.D. dissertation. The period of performance was January 1, 2007 to December 31, 2010. Part I of the final report is the overview published as NASA/CR-2012- 217654. Asymmetric dielectric barrier discharge (DBD) plasma actuators driven by nanosecond pulses superimposed on dc bias voltage are studied experimentally. This produces non-self-sustained discharge: the plasma is generated by repetitive short pulses, and the pushing of the gas occurs primarily due to the bias voltage. The parameters of ionizing pulses and the driving bias voltage can be varied independently, which adds flexibility to control and optimization of the actuators performance. The approach consisted of three elements coupled together: the Schlieren technique, burst mode of plasma actuator operation, and 2-D numerical fluid modeling. During the experiments, it was found that DBD performance is severely limited by surface charge accumulation on the dielectric. Several ways to mitigate the surface charge were found: using a reversing DC bias potential, three-electrode configuration, slightly conductive dielectrics, and semi conductive coatings. Force balance measurements proved the effectiveness of the suggested configurations and advantages of the new voltage profile (pulses+bias) over the traditional sinusoidal one at relatively low voltages. In view of practical applications certain questions have been also addressed, such as electrodynamic effects which accompany scaling of the actuators to real size models, and environmental effects of ozone production by the plasma actuators.

Multiple Interfacial Fe3O4@BaTiO3/P(VDF-HFP) Core-Shell-Matrix Films with Internal Barrier Layer Capacitor (IBLC) Effects and High Energy Storage Density.

PubMed

Zhou, Ling; Fu, Qiuyun; Xue, Fei; Tang, Xiahui; Zhou, Dongxiang; Tian, Yahui; Wang, Geng; Wang, Chaohong; Gou, Haibo; Xu, Lei

2017-11-22

Flexible nanocomposites composed of high dielectric constant fillers and polymer matrix have shown great potential for electrostatic capacitors and energy storage applications. To obtain the composited material with high dielectric constant and high breakdown strength, multi-interfacial composited particles, which composed of conductive cores and insulating shells and possessed the internal barrier layer capacitor (IBLC) effect, were adopted as fillers. Thus, Fe 3 O 4 @BaTiO 3 core-shell particles were prepared and loaded into the poly(vinylidene fluoride-co-hexafluoropropylene) (P(VDF-HFP)) polymer matrix. As the mass fraction of core-shell fillers increased from 2.5 wt % to 30 wt %, the dielectric constant of the films increased, while the loss tangent remained at a low level (<0.05 at 1 kHz). Both high electric displacement and high electric breakdown strength were achieved in the films with 10 wt % core-shell fillers loaded. The maximum energy storage density of 7.018 J/cm 3 was measured at 2350 kV/cm, which shows significant enhancement than those of the pure P(VDF-HFP) films and analogous composited films with converse insulating-conductive core-shell fillers. A Maxwell-Wagner capacitor model was also adopted to interpret the efficiency of IBLC effects on the suppressed loss tangent and the superior breakdown strength. This work explored an effective approach to prepare dielectric nanocomposites for energy storage applications experimentally and theoretically.

Investigation of heavy-ion fusion with deformed surface diffuseness: Actinide and lanthanide targets

NASA Astrophysics Data System (ADS)

Alavi, S. A.; Dehghani, V.

2017-05-01

By using a deformed Broglia-Winther nuclear interaction potential in the framework of the WKB method, the near- and above-barrier heavy-ion-fusion cross sections of 16O with some lanthanides and actinides have been calculated. The effect of deformed surface diffuseness on the nuclear interaction potential, the effective interaction potential at distinct angle, barrier position, barrier height, cross section at each angles, and fusion cross sections of 16O+147Sm,150Nd,154Sm , and 166Er and 16O+232Th,238U,237Np , and 248Cm have been studied. The differences between the results obtained by using deformed surface diffuseness and those obtained by using constant surface diffuseness were noticeable. Good agreement between experimental data and theoretical calculation with deformed surface diffuseness were observed for 16O+147Sm,154Sm,166Er,238U,237Np , and 248Cm reactions. It has been observed that deformed surface diffuseness plays a significant role in heavy-ion-fusion studies.

AC conductivity and dielectric behavior of bulk Furfurylidenemalononitrile

NASA Astrophysics Data System (ADS)

El-Nahass, M. M.; Ali, H. A. M.

2012-06-01

AC conductivity and dielectric behavior for bulk Furfurylidenemalononitrile have been studied over a temperature range (293-333 K) and frequency range (50-5×106 Hz). The frequency dependence of ac conductivity, σac, has been investigated by the universal power law, σac(ω)=Aωs. The variation of the frequency exponent (s) with temperature was analyzed in terms of different conduction mechanisms, and it was found that the correlated barrier hopping (CBH) model is the predominant conduction mechanism. The temperature dependence of σac(ω) showed a linear increase with the increase in temperature at different frequencies. The ac activation energy was determined at different frequencies. Dielectric data were analyzed using complex permittivity and complex electric modulus for bulk Furfurylidenemalononitrile at various temperatures.

Center for dielectric studies

NASA Astrophysics Data System (ADS)

Cross, L. E.; Newnham, R. E.; Biggers, J. V.

1984-05-01

This report focuses upon the parts of the Center program which have drawn most extensively upon Navy funds. In the basic study of polarization processes in high K dielectrics, major progress has been made in understanding the mechanisms in relaxor ferroelectric in the perovskite structure families. A new effort is also being mounted to obtain more precise evaluation of the internal stress effects in fine grained barium titanate. Related to reliability, studies of the effects of induced macro-defects are described, and preparation for the evaluation of space charge by internal potential distribution measurements discussed. To develop new processing methods for very thin dielectric layers, a new type of single barrier layer multilayer is discussed, and work on the thermal evaporation of oriented crystalline antimony sulphur iodide describe.

Generation of large-area and glow-like surface discharge in atmospheric pressure air

DOE Office of Scientific and Technical Information (OSTI.GOV)

Song, Ying; Bi, Zhenhua; Wang, Xueyang

2016-08-15

A large-area (6 cm × 6 cm) air surface dielectric barrier discharge has been generated at atmospheric pressure by using well-aligned and micron-sized dielectric tubes with tungsten wire electrodes. Intensified CCD images with an exposure time of 5 ns show that the uniform surface air discharge can be generated during the rising and falling time of pulsed DC voltage. Current and voltage and optical measurements confirm the formation of glow-like air discharges on the surface of micron-sized dielectric tubes. Simulation results indicate that the microelectrode configuration contributes to the formation of strong surface electric field and plays an important role in the generation of uniformmore » surface air discharge.« less

MOCVD of HfO2 and ZrO2 high-k gate dielectrics for InAlN/AlN/GaN MOS-HEMTs

NASA Astrophysics Data System (ADS)

Abermann, S.; Pozzovivo, G.; Kuzmik, J.; Strasser, G.; Pogany, D.; Carlin, J.-F.; Grandjean, N.; Bertagnolli, E.

2007-12-01

We apply metal organic chemical vapour deposition (MOCVD) of HfO2 and of ZrO2 from β-diketonate precursors to grow high-k gate dielectrics for InAlN/AlN/GaN metal oxide semiconductor (MOS)-high electron mobility transistors (HEMTs). High-k oxides of about 12 nm-14 nm are deposited for the MOS-HEMTs incorporating Ni/Au gates, whereas as a reference, Ni-contact-based 'conventional' Schottky-barrier (SB)-HEMTs are processed. The processed dielectrics decrease the gate current leakage of the HEMTs by about four orders of magnitude if compared with the SB-gated HEMTs and show superior device characteristics in terms of IDS and breakdown.

Self-Organized Patterns in Gas-Discharge: Particle-Like Behaviour and Dissipative Solitons

NASA Astrophysics Data System (ADS)

Purwins, H.-G.

2008-03-01

The understanding of self-organise patterns in spatially extended nonlinear dissipative systems (SOPs) is one of the most challenging subjects in modern natural sciences. In the last 20 years it turned out that research in the field of low temperature gas-discharge can help to obtain insight into important aspect of SOPs. At the same time, due to the practical relevance of plasma systems one might expect interesting applications. In the present paper the focus is on self-organised filamentary patterns in planar dc and ac systems with high ohmic and dielectric barrier, respectively. - In the discharge plane of these systems filaments show up as spots which are also referred to as dissipative solitons (DSs). In many respect experimentally detected DSs exhibit particle-like behaviour. Among other things, isolated stationary or travelling DSs, stationary, travelling or rotating "molecules" and various kinds of many-body systems have been observed. Also scattering, generation and annihilation of DSs are frequent phenomena. - At least some of these patterns can be described quantitatively in terms of a drift diffusion model. It is also demonstrated that a simple reaction diffusion model allows for an intuitive understanding of many of the observed phenomena. At the same time this model is the basis for a theoretical foundation of the particle picture and the experimentally observed universal behaviour of SOPs. - Finally some hypothetical applications are discussed.

Ferroelectric properties of PbxSr1-xTiO3 and its compositionally graded thin films grown on the highly oriented LaNiO3 buffered Pt /Ti/SiO2/Si substrates

NASA Astrophysics Data System (ADS)

Zhai, Jiwei; Yao, Xi; Xu, Zhengkui; Chen, Haydn

2006-08-01

Thin films of ferroelectric PbxSr1-xTiO3 (PST) with x =0.3-0.7 and graded composition were fabricated on LaNiO3 buffered Pt /Ti/SiO2/Si substrates by a sol-gel deposition method. The thin films crystallized into a single perovskite structure and exhibited highly (100) preferred orientation after postdeposition annealing at 650°C. The grain size of PST thin films systematically decreased with the increase of Sr content. Dielectric and ferroelectric properties were investigated as a function of temperature, frequency, and dc applied field. Pb0.6Sr0.4TiO3 films showed a dominant voltage dependence of dielectric constant with a high tunability in a temperature range of 25-230°C. The compositionally graded PST thin films with x =0.3-0.6 also showed the high tunability. The graded thin films exhibited a diffused phase transition accompanied by a diffused peak in the temperature variations of dielectric constants. This kind of thin films has a potential in a fabrication of a temperature stable tunable device.

In Situ Ramp Anneal X-ray Diffraction Study of Atomic Layer Deposited Ultrathin TaN and Ta 1-x Al x N y Films for Cu Diffusion Barrier Applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Consiglio, S.; Dey, S.; Yu, K.

2016-01-01

Ultrathin TaN and Ta 1-xAl xN y films with x = 0.21 to 0.88 were deposited by atomic layer deposition (ALD) and evaluated for Cu diffusion barrier effectiveness compared to physical vapor deposition (PVD) grown TaN. Cu diffusion barrier effectiveness was investigated using in-situ ramp anneal synchrotron X-ray diffraction (XRD) on Cu/1.8 nm barrier/Si stacks. A Kissinger-like analysis was used to assess the kinetics of Cu 3Si formation and determine the effective activation energy (E a) for Cu silicidation. Compared to the stack with a PVD TaN barrier, the stacks with the ALD films exhibited a higher crystallization temperature (Tmore » c) for Cu silicidation. The Ea values of Cu 3Si formation for stacks with the ALD films were close to the reported value for grain boundary diffusion of Cu whereas the Ea of Cu 3Si formation for the stack with PVD TaN is closer to the reported value for lattice diffusion. For 3 nm films, grazing incidence in-plane XRD showed evidence of nanocrystallites in an amorphous matrix with broad peaks corresponding to high density cubic phase for the ALD grown films and lower density hexagonal phase for the PVD grown film further elucidating the difference in initial failure mechanisms due to differences in barrier crystallinity and associated phase.« less

Dielectric spectroscopy of Dy2O3 doped (K0.5Na0.5)NbO3 piezoelectric ceramics

NASA Astrophysics Data System (ADS)

Mahesh, P.; Subhash, T.; Pamu, D.

2014-06-01

We report the dielectric properties of ( K 0.5 Na 0.5 ) NbO 3 ceramics doped with x wt% of Dy 2 O 3 (x= 0.0-1.5 wt%) using the broadband dielectric spectroscopy. The X-ray diffraction studies showed the formation of perovskite structure signifying that Dy 2 O 3 diffuse into the KNN lattice. Samples doped with x > 0.5 wt% exhibit smaller grain size and lower relative densities. The dielectric properties of KNN ceramics doped with Dy 2 O 3 are enhanced by increasing the Dy 3+ content; among the compositions studied, x = 0.5 wt% exhibited the highest dielectric constant and lowest loss at 1MHz over the temperature range of 30°C to 400°C. All the samples exhibit maximum dielectric constant at the Curie temperature (˜ 326°C) and a small peak in the dielectric constant at around 165°C is due to a structural phase transition. At the request of all authors, and by agreement with the Proceedings Editors, a corrected version of this article was published on 19 June 2014. The full text of the Corrigendum is attached to the corrected article PDF file.

Transport of oxygen ions in Er doped La2Mo2O9 oxide ion conductors: Correlation with microscopic length scales

NASA Astrophysics Data System (ADS)

Paul, T.; Ghosh, A.

2018-01-01

We report oxygen ion transport in La2-xErxMo2O9 (0.05 ≤ x ≤ 0.25) oxide ion conductors. We have measured conductivity and dielectric spectra at different temperatures in a wide frequency range. The mean square displacement and spatial extent of non-random sub-diffusive regions are estimated from the conductivity spectra and dielectric spectra, respectively, using linear response theory. The composition dependence of the conductivity is observed to be similar to that of the spatial extent of non-random sub-diffusive regions. The behavior of the composition dependence of the mean square displacement of oxygen ions is opposite to that of the conductivity. The attempt frequency estimated from the analysis of the electric modulus agrees well with that obtained from the Raman spectra analysis. The full Rietveld refinement of X-ray diffraction data of the samples is performed to estimate the distance between different oxygen lattice sites. The results obtained from such analysis confirm the ion hopping within the spatial extent of non-random sub-diffusive regions.

SC lipid model membranes designed for studying impact of ceramide species on drug diffusion and permeation--part II: diffusion and permeation of model drugs.

PubMed

Ochalek, M; Podhaisky, H; Ruettinger, H-H; Wohlrab, J; Neubert, R H H

2012-10-01

The barrier function of two quaternary stratum corneum (SC) lipid model membranes, which were previously characterized with regard to the lipid organization, was investigated based on diffusion studies of model drugs with varying lipophilicities. Diffusion experiments of a hydrophilic drug, urea, and more lipophilic drugs than urea (i.e. caffeine, diclofenac sodium) were conducted using Franz-type diffusion cells. The amount of permeated drug was analyzed using either HPLC or CE technique. The subjects of interest in the present study were the investigation of the influence of physicochemical properties of model drugs on their diffusion and permeation through SC lipid model membranes, as well as the study of the impact of the constituents of these artificial systems (particularly ceramide species) on their barrier properties. The diffusion through both SC lipid model membranes and the human SC of the most hydrophilic model drug, urea, was faster than the permeation of the more lipophilic drugs. The slowest rate of permeation through SC lipid systems occurred in the case of caffeine. The composition of SC lipid model membranes has a significant impact on their barrier function. Model drugs diffused and permeated faster through Membrane II (presence of Cer [EOS]). In terms of the barrier properties, Membrane II is much more similar to the human SC than Membrane I. Copyright © 2012 Elsevier B.V. All rights reserved.

Modeling the Impenetrable Barrier to Inward Transport of Ultra-relativistic Radiation Belt Electrons

NASA Astrophysics Data System (ADS)

Tu, W.; Cunningham, G.; Chen, Y.; Baker, D. N.; Henderson, M. G.; Reeves, G. D.

2014-12-01

It has long been considered that the inner edge of the Earth's outer radiation belt is closely correlated with the minimum plasmapause location. However, recent discoveries by Baker et al. [1] show that it is not the case for ultra-relativistic electrons (2-10 MeV) in the radiation belt. Based on almost two years of Van Allen Probes/REPT data, they find that the inner edge of highly relativistic electrons is rarely collocated with the plasmapause; and more interestingly, there is a clear, persistent, and nearly impenetrable barrier to inward transport of high energy electrons, observed to locate at L~2.8. The presence of such an impenetrable barrier at this very specific location poses a significant puzzle. Using our DREAM3D diffusion model, which includes radial, pitch angle, and momentum diffusion, we are able to simulate the observed impenetrable barrier of ultra-relativistic electrons. The simulation demonstrates that during strong geomagnetic storms the plasmapause can be compressed to very low L region (sometimes as low as L~3), then strong chorus waves just outside the plasmapause can locally accelerate electrons up to multiple-MeV; when storm recovers, plasmapause moves back to large L, while the highly-relativistic electrons generated at low L continue to diffuse inward and slow decay by pitch angle diffusion from plasmaspheric hiss. The delicate balance between slow inward radial diffusion and weak pitch angle scattering creates a fixed inner boundary or barrier for ultra-relativistic electrons. The barrier is found to locate at a fixed L location, independent of the initial penetration depth of electrons that is correlated with the plasmapause location. Our simulation results quantitatively reproduce the evolution of the flux versus L profile, the L location of the barrier, and the decay rate of highly energetic electrons right outside the barrier. 1Baker, D. N., et al. (2014), Nearly Impenetrable Barrier to Inward Ultra-relativistic Magnetospheric Electron Transport, submitted to Nature.

Self-learning kinetic Monte Carlo simulations of diffusion in ferromagnetic α-Fe-Si alloys

NASA Astrophysics Data System (ADS)

Nandipati, Giridhar; Jiang, Xiujuan; Vemuri, Rama S.; Mathaudhu, Suveen; Rohatgi, Aashish

2018-01-01

Diffusion of Si atom and vacancy in the A2-phase of α-Fe-Si alloys in the ferromagnetic state, with and without magnetic order and in various temperature ranges, are studied using AKSOME, an on-lattice self-learning KMC code. Diffusion of the Si atom and the vacancy are studied in the dilute limit and up to 12 at.% Si, respectively, in the temperature range 350-700 K. Local Si neighborhood dependent activation energies for vacancy hops were calculated on-the-fly using a broken-bond model based on pairwise interaction. The migration barrier and prefactor for the Si diffusion in the dilute limit were obtained and found to agree with published data within the limits of uncertainty. Simulations results show that the prefactor and the migration barrier for the Si diffusion are approximately an order of magnitude higher, and a tenth of an electron-volt higher, respectively, in the magnetic disordered state than in the fully ordered state. However, the net result is that magnetic disorder does not have a significant effect on Si diffusivity within the range of parameters studied in this work. Nevertheless, with increasing temperature, the magnetic disorder increases and its effect on the Si diffusivity also increases. In the case of vacancy diffusion, with increasing Si concentration, its diffusion prefactor decreases while the migration barrier more or less remained constant and the effect of magnetic disorder increases with Si concentration. Important vacancy-Si/Fe atom exchange processes and their activation barriers were identified, and the effect of energetics on ordered phase formation in Fe-Si alloys are discussed.

Degradation of selected organophosphate pesticides in wastewater by dielectric barrier discharge plasma.

PubMed

Hu, Yingmei; Bai, Yanhong; Yu, Hu; Zhang, Chunhong; Chen, Jierong

2013-09-01

In this paper, degradation of selected organophosphate pesticides (dichlorvos and dimethoate) in wastewater by dielectric barrier discharge plasma (DBD) was studied. DBD parameters, i.e. discharge powers and air-gap distances, differently affect their degradation efficiency. The results show that better degradation efficiency is obtained with a higher discharge power and a shorter air-gap distance. The effect of radical intervention degradation was also investigated by adding radical scavenger (tert-butyl alcohol) to the pesticide solution during the experiments. The result shows that the degradation efficiency is restrained in the presence of radical scavenger. It clearly demonstrates that hydroxyl radicals are most likely the main driver for degradation process. Moreover, the kinetics indicate that the disappearance rate of pesticides follows the first-order rate law when the initial concentration of the solution is low, but shifts to zero-order at a higher initial concentration.

Direct current dielectric barrier assistant discharge to get homogeneous plasma in capacitive coupled discharge

DOE Office of Scientific and Technical Information (OSTI.GOV)

Du, Yinchang, E-mail: ycdu@mail.ustc.edu.cn; Max-Planck Institute for Extraterrestrial Physics, D-85748 Garching; Li, Yangfang

In this paper, we propose a method to get more homogeneous plasma in the geometrically asymmetric capacitive coupled plasma (CCP) discharge. The dielectric barrier discharge (DBD) is used for the auxiliary discharge system to improve the homogeneity of the geometrically asymmetric CCP discharge. The single Langmuir probe measurement shows that the DBD can increase the electron density in the low density volume, where the DBD electrodes are mounted, when the pressure is higher than 5 Pa. By this manner, we are able to improve the homogeneity of the plasma production and increase the overall density in the target volume. At last,more » the finite element simulation results show that the DC bias, applied to the DBD electrodes, can increase the homogeneity of the electron density in the CCP discharge. The simulation results show a good agreement with the experiment results.« less

Time-resolved study of the electron temperature and number density of argon metastable atoms in argon-based dielectric barrier discharges

NASA Astrophysics Data System (ADS)

Desjardins, E.; Laurent, M.; Durocher-Jean, A.; Laroche, G.; Gherardi, N.; Naudé, N.; Stafford, L.

2018-01-01

A combination of optical emission spectroscopy and collisional-radiative modelling is used to determine the time-resolved electron temperature (assuming Maxwellian electron energy distribution function) and number density of Ar 1s states in atmospheric pressure Ar-based dielectric barrier discharges in presence of either NH3 or ethyl lactate. In both cases, T e values were higher early in the discharge cycle (around 0.8 eV), decreased down to about 0.35 eV with the rise of the discharge current, and then remained fairly constant during discharge extinction. The opposite behaviour was observed for Ar 1s states, with cycle-averaged values in the 1017 m-3 range. Based on these findings, a link was established between the discharge ionization kinetics (and thus the electron temperature) and the number density of Ar 1s state.

Influence of dielectric barrier discharge treatment on mechanical and dyeing properties of wool

NASA Astrophysics Data System (ADS)

Rahul, NAVIK; Sameera, SHAFI; Md Miskatul, ALAM; Md Amjad, FAROOQ; Lina, LIN; Yingjie, CAI

2018-06-01

Physical and chemical properties of wool surface significantly affect the absorbency, rate of dye bath exhaustion and fixation of the industrial dyes. Hence, surface modification is a necessary operation prior to coloration process in wool wet processing industries. Plasma treatment is an effective alternative for physiochemical modification of wool surface. However, optimum processing parameters to get the expected modification are still under investigation, hence this technology is still under development in the wool wet processing industries. Therefore, in this paper, treatment parameters with the help of simple dielectric barrier discharge plasma reactor and air as a plasma gas, which could be a promising combination for treatment of wool substrate at industrial scale were schematically studied, and their influence on the water absorbency, mechanical, and dyeing properties of twill woven wool fabric samples are reported. It is expected that the results will assist to the wool coloration industries to improve the dyeing processes.

Electrical model of dielectric barrier discharge homogenous and filamentary modes

NASA Astrophysics Data System (ADS)

López-Fernandez, J. A.; Peña-Eguiluz, R.; López-Callejas, R.; Mercado-Cabrera, A.; Valencia-Alvarado, R.; Muñoz-Castro, A.; Rodríguez-Méndez, B. G.

2017-01-01

This work proposes an electrical model that combines homogeneous and filamentary modes of an atmospheric pressure dielectric barrier discharge cell. A voltage controlled electric current source has been utilized to implement the power law equation that represents the homogeneous discharge mode, which starts when the gas breakdown voltage is reached. The filamentary mode implies the emergence of electric current conducting channels (microdischarges), to add this phenomenon an RC circuit commutated by an ideal switch has been proposed. The switch activation occurs at a higher voltage level than the gas breakdown voltage because it is necessary to impose a huge electric field that contributes to the appearance of streamers. The model allows the estimation of several electric parameters inside the reactor that cannot be measured. Also, it is possible to appreciate the modes of the DBD depending on the applied voltage magnitude. Finally, it has been recognized a good agreement between simulation outcomes and experimental results.

Simulations of nanosecond-pulsed dielectric barrier discharges in atmospheric pressure air

DOE Office of Scientific and Technical Information (OSTI.GOV)

Soo Bak, Moon; Cappelli, Mark A.

2013-03-21

This paper describes simulations of nanosecond pulse plasma formation between planer electrodes covered by dielectric barriers in air at atmospheric pressure and 340 K. The plasma formation process starts as electrons detach from negative ions of molecular oxygen that are produced from the previous discharge pulse. An ionization front is found to form close to the positively biased electrode and then strengthens and propagates towards the grounded electrode with increasing gap voltage. Charge accumulation and secondary emission from the grounded electrode eventually lead to sheath collapse. One interesting feature is a predicted reversal in gap potential due to the accumulatedmore » charge, even when there is no reversal in applied potential. The simulation results are compared to recent measurement of mid-gap electric field under the same discharge conditions [Ito et al., Phys. Rev. Lett. 107, 065002 (2011)].« less

Influence of catalyst packing configuration on the discharge characteristics of dielectric barrier discharge reactors: A numerical investigation

NASA Astrophysics Data System (ADS)

Gadkari, Siddharth; Gu, Sai

2018-06-01

A two-dimensional numerical fluid model is developed for studying the influence of packing configurations on dielectric barrier discharge (DBD) characteristics. Discharge current profiles and time averaged electric field strength, electron number density, and electron temperature distributions are compared for the three DBD configurations, plain DBD with no packing, partially packed DBD, and fully packed DBD. The results show that a strong change in discharge behaviour occurs when a DBD is fully packed as compared to partial packing or no packing. While the average electric field strength and electron temperature of a fully packed DBD are higher relative to the other DBD configurations, the average electron density is substantially lower and may impede the DBD reactor performance under certain operating conditions. Possible scenarios of the synergistic effect of the combination of plasma with catalysis are also discussed.

A novel two-level dielectric barrier discharge reactor for methyl orange degradation.

PubMed

Tao, Xumei; Wang, Guowei; Huang, Liang; Ye, Qingguo; Xu, Dongyan

2016-12-15

A novel pilot two-level dielectric barrier discharge (DBD) reactor has been proposed and applied for degradation of continuous model wastewater. The two-level DBD reactor was skillfully realized with high space utilization efficiency and large contact area between plasma and wastewater. Various conditions such as applied voltage, initial concentration and initial pH value on methyl orange (MO) model wastewater degradation were investigated. The results showed that the appropriate applied voltage was 13.4 kV; low initial concentration and low initial pH value were conducive for MO degradation. The percentage removal of 4 L MO with concentration of 80 mg/L reached 94.1% after plasma treatment for 80min. Based on ultraviolet spectrum (UV), Infrared spectrum (IR), liquid chromatography-mass spectrometry (LC-MS) analysis of degradation intermediates and products, insights in the degradation pathway of MO were proposed. Copyright © 2016 Elsevier Ltd. All rights reserved.

Spin-transfer torque in multiferroic tunnel junctions with composite dielectric/ferroelectric barriers

NASA Astrophysics Data System (ADS)

Velev, Julian P.; Merodio, Pablo; Pollack, Cesar; Kalitsov, Alan; Chshiev, Mairbek; Kioussis, Nicholas

2017-12-01

Using model calculations, we demonstrate a very high level of control of the spin-transfer torque (STT) by electric field in multiferroic tunnel junctions with composite dielectric/ferroelectric barriers. We find that, for particular device parameters, toggling the polarization direction can switch the voltage-induced part of STT between a finite value and a value close to zero, i.e. quench and release the torque. Additionally, we demonstrate that under certain conditions the zero-voltage STT, i.e. the interlayer exchange coupling, can switch sign with polarization reversal, which is equivalent to reversing the magnetic ground state of the tunnel junction. This bias- and polarization-tunability of the STT could be exploited to engineer novel functionalities such as softening/hardening of the bit or increasing the signal-to-noise ratio in magnetic sensors, which can have important implications for magnetic random access memories or for combined memory and logic devices.

Non-thermal dielectric barrier discharge plasma induces angiogenesis through reactive oxygen species.

PubMed

Arjunan, Krishna P; Clyne, Alisa Morss

2011-01-01

Vascularization plays a key role in processes such as wound healing and tissue engineering. Non-thermal plasma, which primarily produces reactive oxygen species (ROS), recently emerged as an efficient tool in medical applications. Liquids and endothelial cells were treated with a non-thermal dielectric barrier discharge plasma. Plasma treatment of phosphate buffered saline (PBS) and serum-free medium increased ROS concentration in a dose-dependent manner, with a higher concentration in serum-free medium. ROS concentration in cells peaked 1 hour after treatment. 4.2 J/cm(2) increased cell proliferation, 2D and 3D migration, as well as tube formation. A fibroblast growth factor-2 (FGF-2) neutralizing antibody and ROS scavengers for hydrogen peroxide and hydroxyl radicals abrogated these angiogenic effects. Non-thermal plasma may be a potential tool for applying ROS in precise doses to enhance vascularization.

Sterilization of Turmeric by Atmospheric Pressure Dielectric Barrier Discharge Plasma

NASA Astrophysics Data System (ADS)

Setareh, Salarieh; Davoud, Dorranian

2013-11-01

In this study atmospheric pressure dielectric barrier discharge (DBD) plasma has been employed for sterilizing dry turmeric powders. A 6 kV, 6 kHz frequency generator was used to generate plasma with Ar, Ar/O2, He, and He/O2 gases between the 5 mm gap of two quartz covered electrodes. The complete sterilization time of samples due to plasma treatment was measured. The most important contaminant of turmeric is bacillus subtilis. The results show that the shortest sterilization time of 15 min is achieved by exposing the samples to Ar/O2 plasma. Survival curves of samples are exponential functions of time and the addition of oxygen to plasma leads to a significant increase of the absolute value of time constant of the curves. Magnitudes of protein and DNA in treated samples were increased to a similar value for all samples. Taste, color, and solubility of samples were not changed after the plasma treatment.

Ozone production process in pulsed positive dielectric barrier discharge

NASA Astrophysics Data System (ADS)

Ono, Ryo; Oda, Tetsuji

2007-01-01

The ozone production process in a pulsed positive dielectric barrier discharge (DBD) is studied by measuring the spatial distribution of ozone density using a two-dimensional laser absorption method. DBD occurs in a 6 mm point-to-plane gap with a 1 mm-thick glass plate placed on the plane electrode. First, the propagation of DBD is observed using a short-gated ICCD camera. It is shown that DBD develops in three phases: primary streamer, secondary streamer and surface discharge phases. Next, the spatial distribution of ozone density is measured. It is shown that ozone is mostly produced in the secondary streamer and surface discharge, while only a small amount of ozone is produced in the primary streamer. The rate coefficient of the ozone production reaction, O + O2 + M → O3 + M, is estimated to be 2.5 × 10-34 cm6 s-1.

The synergetic effect of UV rays on the decomposition of xylene in dielectric barrier discharge plasma and photocatalyst process

NASA Astrophysics Data System (ADS)

Li, Wenjuan; Gu, Zhenyu; Teng, Fuhua; Lu, Jianhai; Dong, Shibi; Miao, Xiaoping; Wu, Zhongbiao

2018-06-01

The degradation of xylene in the dielectric barrier discharge plasma and photocatalyst process was studied, focusing on the synergetic effect of UV rays from plasma process and external UV lamps on the decomposition of xylene. The results showed that xylene could be decomposed by the discharge process in plasma system, whereas the UV rays from plasma process was very weak. After adding TiO2, the removal efficiency of xylene and energy yield in plasma process were enhanced since energetic particles activated the catalysis of TiO2. The removal efficiency of xylene and energy field in plasma and photocatalyst process combined with external UV lamps were further enhanced attributed to the degradation effect of plasma, the catalysis of TiO2 activated by plasma, the photolysis of UV rays and the photocatalysis of photocatalyst. The synergetic effect of UV rays from external UV lamps was obvious.

A sensitive gas chromatography detector based on atmospheric pressure chemical ionization by a dielectric barrier discharge.

PubMed

Kirk, Ansgar T; Last, Torben; Zimmermann, Stefan

2017-02-03

In this work, we present a novel concept for a gas chromatography detector utilizing an atmospheric pressure chemical ionization which is initialized by a dielectric barrier discharge. In general, such a detector can be simple and low-cost, while achieving extremely good limits of detection. However, it is non-selective apart from the use of chemical dopants. Here, a demonstrator manufactured entirely from fused silica capillaries and printed circuit boards is shown. It has a size of 75×60×25mm 3 and utilizes only 2W of power in total. Unlike other known discharge detectors, which require high-purity helium, this detector can theoretically be operated using any gas able to form stable ion species. Here, purified air is used. With this setup, limits of detection in the low parts-per-billion range have been obtained for acetone. Copyright © 2017 Elsevier B.V. All rights reserved.

Physical Modeling of Gate-Controlled Schottky Barrier Lowering of Metal-Graphene Contacts in Top-Gated Graphene Field-Effect Transistors

NASA Astrophysics Data System (ADS)

Mao, Ling-Feng; Ning, Huansheng; Huo, Zong-Liang; Wang, Jin-Yan

2015-12-01

A new physical model of the gate controlled Schottky barrier height (SBH) lowering in top-gated graphene field-effect transistors (GFETs) under saturation bias condition is proposed based on the energy conservation equation with the balance assumption. The theoretical prediction of the SBH lowering agrees well with the experimental data reported in literatures. The reduction of the SBH increases with the increasing of gate voltage and relative dielectric constant of the gate oxide, while it decreases with the increasing of oxide thickness, channel length and acceptor density. The magnitude of the reduction is slightly enhanced under high drain voltage. Moreover, it is found that the gate oxide materials with large relative dielectric constant (>20) have a significant effect on the gate controlled SBH lowering, implying that the energy relaxation of channel electrons should be taken into account for modeling SBH in GFETs.

Physical Modeling of Gate-Controlled Schottky Barrier Lowering of Metal-Graphene Contacts in Top-Gated Graphene Field-Effect Transistors.

PubMed

Mao, Ling-Feng; Ning, Huansheng; Huo, Zong-Liang; Wang, Jin-Yan

2015-12-17

A new physical model of the gate controlled Schottky barrier height (SBH) lowering in top-gated graphene field-effect transistors (GFETs) under saturation bias condition is proposed based on the energy conservation equation with the balance assumption. The theoretical prediction of the SBH lowering agrees well with the experimental data reported in literatures. The reduction of the SBH increases with the increasing of gate voltage and relative dielectric constant of the gate oxide, while it decreases with the increasing of oxide thickness, channel length and acceptor density. The magnitude of the reduction is slightly enhanced under high drain voltage. Moreover, it is found that the gate oxide materials with large relative dielectric constant (>20) have a significant effect on the gate controlled SBH lowering, implying that the energy relaxation of channel electrons should be taken into account for modeling SBH in GFETs.

Corrosion resistant coatings suitable for elevated temperature application

DOEpatents

Chan, Kwai S [San Antonio, TX; Cheruvu, Narayana Sastry [San Antonio, TX; Liang, Wuwei [Austin, TX

2012-07-31

The present invention relates to corrosion resistance coatings suitable for elevated temperature applications, which employ compositions of iron (Fe), chromium (Cr), nickel (Ni) and/or aluminum (Al). The compositions may be configured to regulate the diffusion of metals between a coating and a substrate, which may then influence coating performance, via the formation of an inter-diffusion barrier layer. The inter-diffusion barrier layer may comprise a face-centered cubic phase.

Kinetic Monte Carlo Simulation of Cation Diffusion in Low-K Ceramics

NASA Technical Reports Server (NTRS)

Good, Brian

2013-01-01

Low thermal conductivity (low-K) ceramic materials are of interest to the aerospace community for use as the thermal barrier component of coating systems for turbine engine components. In particular, zirconia-based materials exhibit both low thermal conductivity and structural stability at high temperature, making them suitable for such applications. Because creep is one of the potential failure modes, and because diffusion is a mechanism by which creep takes place, we have performed computer simulations of cation diffusion in a variety of zirconia-based low-K materials. The kinetic Monte Carlo simulation method is an alternative to the more widely known molecular dynamics (MD) method. It is designed to study "infrequent-event" processes, such as diffusion, for which MD simulation can be highly inefficient. We describe the results of kinetic Monte Carlo computer simulations of cation diffusion in several zirconia-based materials, specifically, zirconia doped with Y, Gd, Nb and Yb. Diffusion paths are identified, and migration energy barriers are obtained from density functional calculations and from the literature. We present results on the temperature dependence of the diffusivity, and on the effects of the presence of oxygen vacancies in cation diffusion barrier complexes as well.

Order, viscoelastic, and dielectric properties of symmetric and asymmetric alkyl[1]benzothieno[3,2-b][1]benzothiophenes.

PubMed

Grigoriadis, Christos; Niebel, Claude; Ruzié, Christian; Geerts, Yves H; Floudas, George

2014-02-06

The morphology, the viscoelastic, the dielectric properties and the dynamics of phase transformation are studied in symmetrically and asymmetrically substituted alkyl[1]benzothieno[3,2-b][1]benzothiophenes (C8-BTBT) by X-ray scattering, rheology, and dielectric spectroscopy. The interlayer spacing reflects the molecular and supramolecular ordering, respectively, in the symmetrically and asymmetrically substituted BTBTs. In the asymmetric BTBT, the core layer is double in size with a broader network of intermolecular interactions though the increased S-S contacts that is prerequisite for the development of high performance OFET devices. Two crystal states with elastic and viscoelastic responses were identified in the symmetric compound. In contrast, the SmA phase in the asymmetric compound is a viscoelastic solid. A path-dependent dielectric environment with a switchable dielectric permittivity was found in both compounds by cooling below 0 °C with possible implications to charge transport. The kinetics of phase transformation to the crystalline and SmA phases revealed a nucleation and growth mechanism with rates dominated by the low activation barriers.

Electrical Double Layer Capacitance in a Graphene-embedded Al2O3 Gate Dielectric

PubMed Central

Ki Min, Bok; Kim, Seong K.; Jun Kim, Seong; Ho Kim, Sung; Kang, Min-A; Park, Chong-Yun; Song, Wooseok; Myung, Sung; Lim, Jongsun; An, Ki-Seok

2015-01-01

Graphene heterostructures are of considerable interest as a new class of electronic devices with exceptional performance in a broad range of applications has been realized. Here, we propose a graphene-embedded Al2O3 gate dielectric with a relatively high dielectric constant of 15.5, which is about 2 times that of Al2O3, having a low leakage current with insertion of tri-layer graphene. In this system, the enhanced capacitance of the hybrid structure can be understood by the formation of a space charge layer at the graphene/Al2O3 interface. The electrical properties of the interface can be further explained by the electrical double layer (EDL) model dominated by the diffuse layer. PMID:26530817

GaN on Diamond with Ultra-Low Thermal Barrier Resistance

DTIC Science & Technology

2016-03-31

GaN-on-Diamond with Ultra-Low Thermal Barrier Resistance Xing Gu1, Cathy Lee1, Jinqiao Xie1, Edward Beam1, Michael Becker2, Timothy A. Grotjohn2...Bristol BS8 1TL, UK Abstract: We investigated the effective thermal boundary resistance (TBReff) of GaN-on-Diamond interfaces for diamond growth... thermal boundary resistance; TBReff , interfacial layers; high density dielectric Introduction While GaN-based RF transistors, typically on SiC

A Novel Solid State Ultracapacitor

NASA Technical Reports Server (NTRS)

Cortes-Pena, A. Y.; Rolin, T. D.; Hill, C. W.

2017-01-01

Novel dielectric materials were researched to develop an internal barrier layer capacitor that is fully solid state. These materials included reduced nanoparticles of barium titanate that were coated with various atomic layer deposited oxides. The nanoparticle powders were then densified into pellets and characterized using a dielectric test fixture over a frequency range of 20 Hz to 2 MHz. Densification and sintering were evaluated using scanning electron microscopic techniques. Ultimately, the samples showing the most promising electrical characteristics of permittivity, dissipation factor and equivalent series resistance were chosen to manufacture devices for subsequent testing.

The Diffusion Process of Patient Education in Dutch Community Pharmacy: An Exploration.

ERIC Educational Resources Information Center

Pronk, M. C. M.; Blom, A. Th. G.; Van Burg, A.; Jonkers, R.

2001-01-01

Identifies barriers and facilitators to the implementation of patient education in community pharmacies and classifies these barriers and facilitators into the diffusion stages of Rogers'"Innovations in Organizations" model. Discusses the implementation of patient education activities that require individual and organizational change in…

Theory and simulation of ion conduction in the pentameric GLIC channel.

PubMed

Zhu, Fangqiang; Hummer, Gerhard

2012-10-09

GLIC is a bacterial member of the large family of pentameric ligand-gated ion channels. To study ion conduction through GLIC and other membrane channels, we combine the one-dimensional potential of mean force for ion passage with a Smoluchowski diffusion model, making it possible to calculate single-channel conductance in the regime of low ion concentrations from all-atom molecular dynamics (MD) simulations. We then perform MD simulations to examine sodium ion conduction through the GLIC transmembrane pore in two systems with different bulk ion concentrations. The ion potentials of mean force, calculated from umbrella sampling simulations with Hamiltonian replica exchange, reveal a major barrier at the hydrophobic constriction of the pore. The relevance of this barrier for ion transport is confirmed by a committor function that rises sharply in the barrier region. From the free evolution of Na(+) ions starting at the barrier top, we estimate the effective diffusion coefficient in the barrier region, and subsequently calculate the conductance of the pore. The resulting diffusivity compares well with the position-dependent ion diffusion coefficient obtained from restrained simulations. The ion conductance obtained from the diffusion model agrees with the value determined via a reactive-flux rate calculation. Our results show that the conformation in the GLIC crystal structure, with an estimated conductance of ~1 picosiemens at 140 mM ion concentration, is consistent with a physiologically open state of the channel.

Integrated-circuit balanced parametric amplifier

NASA Technical Reports Server (NTRS)

Dickens, L. E.

1975-01-01

Amplifier, fabricated on single dielectric substrate, has pair of Schottky barrier varactor diodes mounted on single semiconductor chip. Circuit includes microstrip transmission line and slot line section to conduct signals. Main features of amplifier are reduced noise output and low production cost.

Effect of the addition of B{sub 2}O{sub 3} and BaO-B{sub 2}O{sub 3}-SiO{sub 2} glasses on the microstructure and dielectric properties of giant dielectric constant material CaCu{sub 3}Ti{sub 4}O{sub 12}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shri Prakash, B.; Varma, K.B.R.

2007-06-15

The effect of the addition of glassy phases on the microstructure and dielectric properties of CaCu{sub 3}Ti{sub 4}O{sub 12} (CCTO) ceramics was investigated. Both single-component (B{sub 2}O{sub 3}) and multi-component (30 wt% BaO-60 wt% B{sub 2}O{sub 3}-10 wt% SiO{sub 2} (BBS)) glass systems were chosen to study their effect on the density, microstructure and dielectric properties of CCTO. Addition of an optimum amount of B{sub 2}O{sub 3} glass facilitated grain growth and an increase in dielectric constant. However, further increase in the B{sub 2}O{sub 3} content resulted in its segregation at the grain boundaries associated with a reduction in themore » grain size. In contrast, BBS glass addition resulted in well-faceted grains and increase in the dielectric constant and decrease in the dielectric loss. An internal barrier layer capacitance (IBLC) model was invoked to correlate the dielectric constant with the grain size in these samples. - Graphical abstract: Scanning electron micrograph of 30 wt% BaO-60 wt% B{sub 2}O{sub 3}-10 wt% SiO{sub 2} (BBS) glass-added CaCu{sub 3}Ti{sub 4}O{sub 12} ceramic on sintering.« less

Amorphous-Metal-Film Diffusion Barriers

NASA Technical Reports Server (NTRS)

Nicolet, M. A.

1987-01-01

Incorporation of N into Ni/W films reduces reactivity with Si substrate. Paper describes reactions between Si substrates and deposited amorphous Ni/W or Ni/N/W films. Thermal stability of amorphous Ni/W films as diffusion barriers in Si markedly improved by introduction of N into Ni/W films during deposition.

Particle-in-cell modeling of gas-confined barrier discharge

DOE Office of Scientific and Technical Information (OSTI.GOV)

Levko, Dmitry; Raja, Laxminarayan L.

2016-04-15

Gas-confined barrier discharge is studied using the one-dimensional Particle-in-Cell Monte Carlo Collisions model for the conditions reported by Guerra-Garcia and Martinez-Sanchez [Appl. Phys. Lett. 106, 041601 (2015)]. Depending on the applied voltage, two modes of discharge are observed. In the first mode, the discharge develops in the entire interelectrode gap. In the second mode, the discharge is ignited and develops only in the gas layer having smaller breakdown voltage. The one-dimensional model shows that for the conditions considered, there is no streamer stage of breakdown as is typical for a traditional dielectric barrier discharge.

Effects of Cr/Zn Substitutions on Dielectric Properties of CaCu{sub 3}Ti{sub 4}O{sub 12}(CCTO) Ceramics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rajmi, R.; Yahya, A. K.; Deni, M. S. M.

2010-07-07

Effects of Zn and Cr substitutions on dielectric properties of CaCu{sub 3-x}Zn{sub x}Ti{sub 4-y}Cr{sub y}O{sub 12} ceramics are reported. Dielectric measurements at room temperature for un-substituted CaCu{sub 3-x}Zn{sub x}Ti{sub 4-y}Cr{sub y}O{sub 12}(x = 0, y = 0) between 10{sup 2}-10{sup 6} Hz showed dielectric constant of 2.7x10{sup 4} at 10{sup 2} Hz. Substitution of Zn for Cu in CaCu{sub 3-x}Zn{sub xTi{sub 4{sub -{sub yCr{sub yO{sub 1{sub 2}}}}}}}(y = 0, x = 0.10, 0.50)caused dielectric constant to drop with increasing x. Cr substitution at Ti-site in CaCu{sub 3-x}Zn{sub xTi{sub 4{sub -{sub yCr{sub yO{sub 1{sub 2}}}}}}}(x = 0, x = 0,) alsomore » caused decrease in dielectric constant. However, at x = 0.50, the dielectric constant at low frequency was enhanced compared to the un-substituted sample. Our results indicate that Cu and Ti sites play an important role in the formation of Internal Barrier Layer Capacitance (IBLC) in CCTO.« less

Frequency and temperature dependent dielectric properties of TiO2-V2O5 nanocomposites

NASA Astrophysics Data System (ADS)

Ray, Apurba; Roy, Atanu; De, Sayan; Chatterjee, Souvik; Das, Sachindranath

2018-03-01

In this manuscript, we have reported the crystal structure, dielectric response, and transport phenomenon of TiO2-V2O5 nanocomposites. The nanocomposites were synthesized using a sol-gel technique having different molar ratios of Ti:V (10:10, 10:15, and 10:20). The phase composition and the morphology have been studied using X-ray diffraction and field emission scanning electron microscope, respectively. The impedance spectroscopy studies of the three samples over a wide range of temperature (50 K-300 K) have been extensively described using the internal barrier layer capacitor model. It is based on the contribution of domain and domain boundary, relaxations of the materials, which are the main crucial factors for the enhancement of the dielectric response. The frequency dependent ac conductivity of the ceramics strongly obeys the well-known Jonscher's power law, and it has been clearly explained using the theory of jump relaxation model. The temperature dependent bulk conductivity is fairly recognized to the variable-range hopping of localized polarons. The co-existence of mixed valence state of Ti ions (Ti3+ and Ti4+) in the sample significantly contributes to the change of dielectric property. The overall study of dielectric response explains that the dielectric constant and the dielectric loss are strongly dependent on temperature and frequency and decrease with an increase of frequency as well as temperature.

Effect of stratum corneum heterogeneity, anisotropy, asymmetry and follicular pathway on transdermal penetration.

PubMed

Barbero, Ana M; Frasch, H Frederick

2017-08-28

The impact of the complex structure of the stratum corneum on transdermal penetration is not yet fully described by existing models. A quantitative and thorough study of skin permeation is essential for chemical exposure assessment and transdermal delivery of drugs. The objective of this study is to analyze the effects of heterogeneity, anisotropy, asymmetry, follicular diffusion, and location of the main barrier of diffusion on percutaneous permeation. In the current study, the solution of the transient diffusion through a two-dimensional-anisotropic brick-and-mortar geometry of the stratum corneum is obtained using the commercial finite element program COMSOL Multiphysics. First, analytical solutions of an equivalent multilayer geometry are used to determine whether the lipids or corneocytes constitute the main permeation barrier. Also these analytical solutions are applied for validations of the finite element solutions. Three illustrative compounds are analyzed in these sections: diethyl phthalate, caffeine and nicotine. Then, asymmetry with depth and follicular diffusion are studied using caffeine as an illustrative compound. The following findings are drawn from this study: the main permeation barrier is located in the lipid layers; the flux and lag time of diffusion through a brick-and-mortar geometry are almost identical to the values corresponding to a multilayer geometry; the flux and lag time are affected when the lipid transbilayer diffusivity or the partition coefficients vary with depth, but are not affected by depth-dependent corneocyte diffusivity; and the follicular contribution has significance for low transbilayer lipid diffusivity, especially when flux between the follicle and the surrounding stratum corneum is involved. This study demonstrates that the diffusion is primarily transcellular and the main barrier is located in the lipid layers. Published by Elsevier B.V.

Electrode effects in dielectric spectroscopy measurements on (Nb+In) co-doped TiO2

NASA Astrophysics Data System (ADS)

Crandles, D. A.; Yee, S. M. M.; Savinov, M.; Nuzhnyy, D.; Petzelt, J.; Kamba, S.; Prokeš, J.

2016-04-01

Recently, several papers reported the discovery of giant permittivity and low dielectric loss in (Nb+In) co-doped TiO2. A series of tests was performed which included the measurement of the frequency dependence of the dielectric permittivity and alternating current (ac) conductivity of co-doped (Nb+In)TiO2 as a function of electrode type, sample thickness, and temperature. The data suggest that the measurements are strongly affected by the electrodes. The consistency between four-contact van der Pauw direct current conductivity measurements and bulk conductivity values extracted from two-contact ac conductivity measurements suggest that the values of colossal permittivity are, at least in part, a result of Schottky barrier depletion widths that depend on electrode type and temperature.

Electrode effects in dielectric spectroscopy measurements on (Nb +In) co-doped TiO2

NASA Astrophysics Data System (ADS)

Crandles, David; Yee, Susan; Savinov, Maxim; Nuzhnyy, Dimitri; Petzelt, Jan; Kamba, Stanislav; Prokes, Jan

Recently, several papers reported the discovery of giant permittivity and low dielectric loss in (Nb+In) co-doped TiO2. A series of tests was performed which included the measurement of the frequency dependence of the dielectric permittivity and ac conductivity of co-doped (Nb+In)TiO2 as a function of electrode type, sample thickness and temperature. The data suggest that the measurements are strongly affected by the electrodes. The consistency between four contact van der Pauw dc conductivity measurements and bulk conductivity values extracted from two contact ac conductivity measurements suggest that the values of colossal permittivity are, at least in part, a result of Schottky barrier depletion widths that depend on electrode type and temperature. Nserc, Czech Science Foundation (Project 15-08389S).

Enhanced electrohydrodynamic force generation in a two-stroke cycle dielectric-barrier-discharge plasma actuator

NASA Astrophysics Data System (ADS)

Sato, Shintaro; Takahashi, Masayuki; Ohnishi, Naofumi

2017-05-01

An approach for electrohydrodynamic (EHD) force production is proposed with a focus on a charge cycle on a dielectric surface. The cycle, consisting of positive-charging and neutralizing strokes, is completely different from the conventional methodology, which involves a negative-charging stroke, in that the dielectric surface charge is constantly positive. The two-stroke charge cycle is realized by applying a DC voltage combined with repetitive pulses. Simulation results indicate that the negative pulse eliminates the surface charge accumulated during constant voltage phase, resulting in repetitive EHD force generation. The time-averaged EHD force increases almost linearly with increasing repetitive pulse frequency and becomes one order of magnitude larger than that driven by the sinusoidal voltage, which has the same peak-to-peak voltage.

Method for distributing chemicals through a fibrous material using low-headspace dielectric heating

DOEpatents

Banerjee, Sujit; Malcolm, Earl

2002-01-01

System and method for diffusing chemicals rapidly and evenly into and through fibrous material, such as wood. Chemicals are introduced into the fibrous material by applying the chemicals to the fibrous material. After treating the fibrous material with the chemicals, the fibrous material is maintained under low-headspace conditions. Thermal energy or dielectric heating, such as microwave or radio frequency energy, is applied to the fibrous material. As a result, the chemicals are able to distribute evenly and quickly throughout the fibrous material.

Field emission microplasma actuation for microchannel flows

NASA Astrophysics Data System (ADS)

Sashank Tholeti, Siva; Shivkumar, Gayathri; Alexeenko, Alina A.

2016-06-01

Microplasmas offer attractive flow control methodology for gas transport in microsystems where large viscous losses make conventional pumping methods highly inefficient. We study microscale flow actuation by dielectric-barrier discharge (DBD) with field emission (FE) of electrons, which allows lowering the operational voltage from kV to a few hundred volts and below. A feasibility study of FE-DBD for flow actuation is performed using 2D particle-in-cell method with Monte Carlo collisions (PIC/MCC) at 10 MHz in nitrogen at atmospheric pressure. The free diffusion dominated, high velocity field emission electrons create a large positive space charge and a body force on the order of 106 N m-3. The body force and Joule heat decrease with increase in dielectric thickness and electrode thickness. The body force also decreases at lower pressures. The plasma body force distribution along with the Joule heating is then used in the Navier-Stokes simulations to quantify the flow actuation in a microchannel. Theoretical analysis and simulations for plasma actuated planar Poiseuille flow show that the gain in flow rate is inversely proportional to Reynolds number. This theoretical analysis is in good agreement with the simulations for a microchannel with closely placed actuators under incompressible conditions. Flow rate of FE-DBD driven 2D microchannel is around 100 ml min-1 mm-1 for an input power of 64 μW mm-1. The gas temperature rises by 1500 K due to the Joule heating, indicating FE-DBD’s potential for microcombustion, micropropulsion and chemical sensing in addition to microscale pumping and mixing applications.

Lanthanide-Assisted Deposition of Strongly Electro-optic PZT Thin Films on Silicon: Toward Integrated Active Nanophotonic Devices.

PubMed

George, J P; Smet, P F; Botterman, J; Bliznuk, V; Woestenborghs, W; Van Thourhout, D; Neyts, K; Beeckman, J

2015-06-24

The electro-optical properties of lead zirconate titanate (PZT) thin films depend strongly on the quality and crystallographic orientation of the thin films. We demonstrate a novel method to grow highly textured PZT thin films on silicon using the chemical solution deposition (CSD) process. We report the use of ultrathin (5-15 nm) lanthanide (La, Pr, Nd, Sm) based intermediate layers for obtaining preferentially (100) oriented PZT thin films. X-ray diffraction measurements indicate preferentially oriented intermediate Ln2O2CO3 layers providing an excellent lattice match with the PZT thin films grown on top. The XRD and scanning electron microscopy measurements reveal that the annealed layers are dense, uniform, crack-free and highly oriented (>99.8%) without apparent defects or secondary phases. The EDX and HRTEM characterization confirm that the template layers act as an efficient diffusion barrier and form a sharp interface between the substrate and the PZT. The electrical measurements indicate a dielectric constant of ∼650, low dielectric loss of ∼0.02, coercive field of 70 kV/cm, remnant polarization of 25 μC/cm(2), and large breakdown electric field of 1000 kV/cm. Finally, the effective electro-optic coefficients of the films are estimated with a spectroscopic ellipsometer measurement, considering the electric field induced variations in the phase reflectance ratio. The electro-optic measurements reveal excellent linear effective pockels coefficients of 110 to 240 pm/V, which makes the CSD deposited PZT thin film an ideal candidate for Si-based active integrated nanophotonic devices.

Transport of Organic Compounds Through Porous Systems Containing Humic Acids.

PubMed

Smilek, Jiri; Sedlacek, Petr; Lastuvkova, Marcela; Kalina, Michal; Klucakova, Martina

2017-03-01

Soil pollution by the presence of different contaminants (e.g. heavy metal ions or pesticides) is one of the biggest problems worldwide. The positive affinity of natural humic acids towards these contaminants might contribute to the soil and ground water protection; therefore it is necessary to study the reactivity and barrier properties of humic acids. An original reactivity-mapping tool based on diffusion techniques designed to study the reactivity and barrier properties of polyelectrolytes was developed and tested on humic acids. The results of diffusion experiments demonstrate that the electrostatic interactions between humic acids functioning as a polyelectrolyte interpenetrated in a supporting hydrogel matrix (agarose) and cationic dye (methylene blue) as a model solute have a crucial impact on the rate of diffusion processes and on the barrier properties of hydrogels. The intensity of interactions was evaluated by fundamental diffusion parameters (effective diffusion coefficients and breakthrough time). The impact of modification of humic acids was also studied by means of diffusion experiments conducted on two types of standard humic acids (Leonardite 1S104H) and humic acids with selectively methylated carboxylic groups.

Mode-coupling theoretical analysis of transport and relaxation properties of liquid dimethylimidazolium chloride

NASA Astrophysics Data System (ADS)

Yamaguchi, T.; Koda, S.

2010-03-01

The mode-coupling theory for molecular liquids based on the interaction-site model is applied to a representative molecular ionic liquid, dimethylimidazolium chloride, and dynamic properties such as shear viscosity, self-diffusion coefficients, reorientational relaxation time, electric conductivity, and dielectric relaxation spectrum are analyzed. Molecular dynamics (MD) simulation is also performed on the same system for comparison. The theory captures the characteristics of the dynamics of the ionic liquid qualitatively, although theoretical relaxation times are several times larger than those from the MD simulation. Large relaxations are found in the 100 MHz region in the dispersion of the shear viscosity and the dielectric relaxation, in harmony with various experiments. The relaxations of the self-diffusion coefficients are also found in the same frequency region. The dielectric relaxation spectrum is divided into the contributions of the translational and reorientational modes, and it is demonstrated that the relaxation in the 100 MHz region mainly stems from the translational modes. The zero-frequency electric conductivity is close to the value predicted by the Nernst-Einstein equation in both MD simulation and theoretical calculation. However, the frequency dependence of the electric conductivity is different from those of self-diffusion coefficients in that the former is smaller than the latter in the gigahertz-terahertz region, which is compensated by the smaller dispersion of the former in the 100 MHz region. The analysis of the theoretical calculation shows that the difference in their frequency dependence is due to the different contribution of the short- and long-range liquid structures.

Plasmachemical and heterogeneous processes in ozonizers with oxygen activation by a dielectric barrier discharge

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mankelevich, Yu. A., E-mail: ymankelevich@mics.msu.su; Voronina, E. N.; Poroykov, A. Yu.

Plasmachemical and heterogeneous processes of generation and loss of ozone in the atmosphericpressure dielectric barrier discharge in oxygen are studied theoretically. Plasmachemical and electronic kinetics in the stage of development and decay of a single plasma filament (microdischarge) are calculated numerically with and without allowance for the effects of ozone vibrational excitation and high initial ozone concentration. The developed analytical approach is applied to determine the output ozone concentration taking into account ozone heterogeneous losses on the Al{sub 2}O{sub 3} dielectric surface. Using the results of quantummechanical calculations by the method of density functional theory, a multistage catalytic mechanism ofmore » heterogeneous ozone loss based on the initial passivation of a pure Al{sub 2}O{sub 3} surface by ozone and the subsequent interaction of O{sub 3} molecules with the passivated surface is proposed. It is shown that the conversion reaction 2O{sub 3} → 3O{sub 2} of a gas-phase ozone molecule with a physically adsorbed ozone molecule can result in the saturation of the maximum achievable ozone concentration at high specific energy depositions, the nonstationarity of the output ozone concentration, and its dependence on the prehistory of ozonizer operation.« less

Effect of voltage waveform on dielectric barrier discharge ozone production efficiency

NASA Astrophysics Data System (ADS)

Mericam-Bourdet, N.; Kirkpatrick, M. J.; Tuvache, F.; Frochot, D.; Odic, E.

2012-03-01

Dielectric barrier discharges (DBDs) are commonly used for gas effluent cleanup and ozone generation. For these applications, the energy efficiency of the discharge is a major concern. This paper reports on investigations carried out on the voltage shape applied to DBD reactor electrodes, aiming to evaluate a possible energy efficiency improvement for ozone production. Two DBD reactor geometries were used: pin-to-pin and cylinder-to-cylinder, both driven either by a bi-directional power supply (voltage rise rate 1 kV/μs) or by a pulsed power supply (voltage rise rate 1 kV/ns). Ozone formed in dry air was measured at the reactor outlet. Special attention was paid to discharge input power evaluation using different methods including instantaneous current-voltage product and transferred charge-applied voltage figures. The charge transferred by the discharges was also correlated to the ozone production. It is shown that, in the case of the DBD reactors under investigation, the applied voltage shape has no influence on the ozone production efficiency. For the considered voltage rise rate, the charge deposit on the dielectric inserted inside the discharge gap is the important factor (as opposed to the voltage shape) governing the efficiency of the discharge - it does this by tailoring the duration of the current peak into the tens of nanosecond range.

Communication: Surface-to-bulk diffusion of isolated versus interacting C atoms in Ni(111) and Cu(111) substrates: A first principle investigation.

PubMed

Harpale, Abhilash; Panesi, Marco; Chew, Huck Beng

2015-02-14

Using first principle calculations, we study the surface-to-bulk diffusion of C atoms in Ni(111) and Cu(111) substrates, and compare the barrier energies associated with the diffusion of an isolated C atom versus multiple interacting C atoms. We find that the preferential Ni-C bonding over C-C bonding induces a repulsive interaction between C atoms located at diagonal octahedral voids in Ni substrates. This C-C interaction accelerates C atom diffusion in Ni with a reduced barrier energy of ∼1 eV, compared to ∼1.4-1.6 eV for the diffusion of isolated C atoms. The diffusion barrier energy of isolated C atoms in Cu is lower than in Ni. However, bulk diffusion of interacting C atoms in Cu is not possible due to the preferential C-C bonding over C-Cu bonding, which results in C-C dimer pair formation near the surface. The dramatically different C-C interaction effects within the different substrates explain the contrasting growth mechanisms of graphene on Ni(111) and Cu(111) during chemical vapor deposition.

Structural and Thermodynamic Factors of Suppressed Interdiffusion Kinetics in Multi-component High-entropy Materials

PubMed Central

Chang, Shou-Yi; Li, Chen-En; Huang, Yi-Chung; Hsu, Hsun-Feng; Yeh, Jien-Wei; Lin, Su-Jien

2014-01-01

We report multi-component high-entropy materials as extraordinarily robust diffusion barriers and clarify the highly suppressed interdiffusion kinetics in the multi-component materials from structural and thermodynamic perspectives. The failures of six alloy barriers with different numbers of elements, from unitary Ti to senary TiTaCrZrAlRu, against the interdiffusion of Cu and Si were characterized, and experimental results indicated that, with more elements incorporated, the failure temperature of the barriers increased from 550 to 900°C. The activation energy of Cu diffusion through the alloy barriers was determined to increase from 110 to 163 kJ/mole. Mechanistic analyses suggest that, structurally, severe lattice distortion strains and a high packing density caused by different atom sizes, and, thermodynamically, a strengthened cohesion provide a total increase of 55 kJ/mole in the activation energy of substitutional Cu diffusion, and are believed to be the dominant factors of suppressed interdiffusion kinetics through the multi-component barrier materials. PMID:24561911

Atomic layer deposited lithium aluminum oxide: (In)dependency of film properties from pulsing sequence

DOE Office of Scientific and Technical Information (OSTI.GOV)

Miikkulainen, Ville, E-mail: ville.miikkulainen@helsinki.fi; Nilsen, Ola; Fjellvåg, Helmer

Atomic layer deposition (ALD) holds markedly high potential of becoming the enabling method for achieving the three-dimensional all-solid-state thin-film lithium ion battery (LiB). One of the most crucial components in such a battery is the electrolyte that needs to hold both low electronic conductivity and at least fair lithium ion conductivity being at the same time pinhole free. To obtain these desired properties in an electrolyte film, one necessarily has to have a good control over the elemental composition of the deposited material. The present study reports on the properties of ALD lithium aluminum oxide (Li{sub x}Al{sub y}O{sub z}) thinmore » films. In addition to LiB electrolyte applications, Li{sub x}Al{sub y}O{sub z} is also a candidate low dielectric constant (low-k) etch stop and diffusion barrier material in nanoelectronics applications. The Li{sub x}Al{sub y}O{sub z} films were deposited employing trimethylaluminum-O{sub 3} and lithium tert-butoxide-H{sub 2}O for Al{sub 2}O{sub 3} and Li{sub 2}O/LiOH, respectively. The composition was aimed to be controlled by varying the pulsing ratio of those two binary oxide ALD cycles. The films were characterized by several methods for composition, crystallinity and phase, electrical properties, hardness, porosity, and chemical environment. Regardless of the applied pulsing ratio of Al{sub 2}O{sub 3} and Li{sub 2}O/LiOH, all the studied ALD Li{sub x}Al{sub y}O{sub z} films of 200 and 400 nm in thickness were polycrystalline in the orthorhombic β-LiAlO{sub 2} phase and also very similar to each other with respect to composition and other studied properties. The results are discussed in the context of both fundamental ALD chemistry and applicability of the films as thin-film LiB electrolytes and low-k etch stop and diffusion barriers.« less

Measurement of OH Radicals in Pulsed Corona and Pulsed Dielectric Barrier Discharge

NASA Astrophysics Data System (ADS)

Ono, Ryo; Oda, Tetsuji

OH radicals are measured in a pulsed corona or a pulsed dielectric barrier discharge (DBD) using laserinduced fluorescence (LIF) method. The pulsed discharges occur in nitrogen-oxygen mixture with 2.4% water vapor at atmospheric pressure. The pulse width is 100ns and the peak voltage is 35kV. The electrode configuration is a needle to plate electrode with 16-mm gap for corona discharge, and with 5-mm gap for DBD where the barrier is 2mm thick glass plate. It is shown that OH density is approximately proportional to the energy consumed by the discharge. The OH density per the discharge energy is about 2-4×1014cm-3/mJ for both discharges in H2O(2.4%)/N2 mixture. It is shown that OH density increases with oxygen content in DBD, whereas OH density reaches a maximum at 3% oxygen content in corona discharge. The existence of oxygen accelerates OH decay rate in both discharges. A trace amount of trichloroethylene (TCE) is added to the ambient gas. It is shown that the addition of 100ppm TCE to corona discharge reduces discharge current by about 50%. That leads to decrease of OH production.

Colossal Dielectric Behavior of Ga+Nb Co-Doped Rutile TiO2.

PubMed

Dong, Wen; Hu, Wanbiao; Berlie, Adam; Lau, Kenny; Chen, Hua; Withers, Ray L; Liu, Yun

2015-11-18

Stimulated by the excellent colossal permittivity (CP) behavior achieved in In+Nb co-doped rutile TiO2, in this work we investigate the CP behavior of Ga and Nb co-doped rutile TiO2, i.e., (Ga(0.5)Nb(0.5))(x)Ti(1-x)O2, where Ga(3+) is from the same group as In(3+) but with a much smaller ionic radius. Colossal permittivity of up to 10(4)-10(5) with an acceptably low dielectric loss (tan δ = 0.05-0.1) over broad frequency/temperature ranges is obtained at x = 0.5% after systematic synthesis optimizations. Systematic structural, defect, and dielectric characterizations suggest that multiple polarization mechanisms exist in this system: defect dipoles at low temperature (∼10-40 K), polaronlike electron hopping/transport at higher temperatures, and a surface barrier layer capacitor effect. Together these mechanisms contribute to the overall dielectric properties, especially apparent observed CP. We believe that this work provides comprehensive guidance for the design of new CP materials.

Ultrastable Natural Ester-Based Nanofluids for High Voltage Insulation Applications.

PubMed

Peppas, Georgios D; Bakandritsos, Aristides; Charalampakos, Vasilis P; Pyrgioti, Eleftheria C; Tucek, Jiri; Zboril, Radek; Gonos, Ioannis F

2016-09-28

Nanofluids for high voltage insulation systems have emerged as a potential substitute for liquid dielectrics in industrial applications. Nevertheless, the sedimentation of nanoparticles has been so far a serious barrier for their wide and effective exploitation. The present work reports on the development and in-depth characterization of colloidally ultrastable natural ester oil insulation systems containing iron oxide nanocrystals which lift the problem of sedimentation and phase separation. Compared to state-of-the-art systems, the final product is endowed with increased dielectric strength, faster thermal response, lower dielectric losses (decreased dissipation factor: tan δ), and very high endurance during discharge stressing. The developed nanofluid was studied and compared with a similar system containing commercial iron oxide nanoparticles, the latter demonstrating extensive sedimentation. Herein, the dielectric properties of the nanofluids are analyzed at various concentrations by means of breakdown voltage and dissipation factor measurements. The characterization techniques unequivocally demonstrate the high performance reliability of the reported nanofluid, which constitutes a significant breakthrough in the field of high voltage insulation technologies.

AC conductivity and Dielectric Study of Chalcogenide Glasses of Se-Te-Ge System

NASA Astrophysics Data System (ADS)

Salman, Fathy

2004-01-01

The ac conductivity and dielectric properties of glassy system SexTe79 - xGe21, with x = 11, 14, 17 at.%, has been studied at temperatures 300 to 450 K and over a wide range of frequencies (50 Hz to 500 kHz). Experimental results indicate that the ac conductivity and the dielectric constants depend on temperature, frequency and Se content. The conductivity as a function of frequency exhibited two components: dc conductivity s dc, and ac conductivity s ac, where s ac ˜ w s. The mechanism of ac conductivity can be reasonably interpreted in terms of the correlated barrier hopping model (CBH). The activation energies are estimated and discussed. The dependence of ac conductivity and dielectric constants on the Se content x can be interpreted as the effect of Se fraction on the positional disorder. The impedance plot at each temperature appeared as a semicircle passes through the origin. Each semicircle is represented by an equivalent circuit of parallel resistance Rb and capacitance Cb.

Two-dimensional simulation of discharge channels in atmospheric-pressure single dielectric barrier discharges

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Jiao; Wang, Yanhui, E-mail: wangyh@dlut.edu.cn; Wang, Dezhen, E-mail: wangdez@dlut.edu.cn

A two-dimensional fluid model is developed to study the filaments (or discharge channels) in atmospheric-pressure discharge with one plate electrode covered by a dielectric layer. Under certain discharge parameters, one or more stable filaments with wide radii could be regularly arranged in the discharge space. Different from the short-lived randomly distributed microdischarges, this stable and thick filament can carry more current and have longer lifetime. Because only one electrode is covered by a dielectric layer in the simulation, the formed discharge channel extends outwards near the dielectric layer and shrinks inwards near the naked electrode, agreeing with the experimental results.more » In this paper, the evolution of channel is studied, and its behavior is like a streamer or an ionization wave, but the propagation distance is short. The discharge parameters such as voltage amplitude, electrode width, and N{sub 2} impurities content could significantly influence the number of discharge channel, which is discussed in the paper.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cheng, He; Liu, Xin; Lu, Xinpei

The atmospheric pressure non-equilibrium plasma has shown a significant potential as a novel food decontamination technology. In this paper, we report a computational study of the intersection of negative streamer produced by air dielectric barrier discharge with bacteria biofilm on an apple surface. The structure, conductivities, and permittivities of bacteria biofilm have been considered in the Poisson's equations and transportation equations of charge and neutral species to realize self-consistent transportation of plasma between electrode and charging surfaces of apple. We find that the ionization near the biofilm facilitates the propagation of negative streamer when the streamer head is 1 mm frommore » the biofilm. The structure of the biofilm results in the non-uniform distribution of ROS and RNS captured by flux and time fluence of these reactive species. The mean free path of charged species in μm scale permitted the plasma penetrate into the cavity of the biofilm, therefore, although the density of ROS and RNS decrease by 6–7 order of magnitude, the diffusion results in the uniform distribution of ROS and RNS inside the cavity during the pulse off period.« less

Diffusion behavior of Cu/Ta heterogeneous interface under high temperature and high strain: An atomistic investigation

NASA Astrophysics Data System (ADS)

Li, Ganglong; Wu, Houya; Luo, Honglong; Chen, Zhuo; Tay, Andrew A. O.; Zhu, Wenhui

2017-09-01

Three-dimensional (3D) integration technology using Cu interconnections has emerged as a promising solution to improve the performance of silicon microelectronic devices. However, Cu diffuses into SiO2 and requires a barrier layer such as Ta to ensure acceptable reliability. In this paper, the effects of temperature and strain normal to the interface on the inter-diffusion of Cu and Ta at annealing conditions are investigated using a molecular dynamics (MD) technique with embedded atomic method (EAM) potentials. Under thermal annealing conditions without strain, it is found that a Cu-rich diffusion region approximately 2 nm thick is formed at 1000 K after 10 ns of annealing. Ta is capable of diffusing into the interior of Cu but Cu hardly diffuses into the inner lattice of Ta. At the Cu side near the interface an amorphous structure is formed due to the process of diffusion. The diffusion activation energy of Cu and Ta are found to be 0.9769 and 0.586 eV, respectively. However, when a strain is applied, a large number of crystal defects are generated in the sample. As the strain is increased, extrinsic stacking faults (ESFs) and lots of Shockley partial dislocations appear. The density of the dislocations and the diffusion channels increase, promoting the diffusion of Cu atoms into the inner lattice of Ta. The thickness of the diffusion layer increases to 4 times the value when only a temperature load of 700 K is applied. The MD simulations demonstrated that Ta is very effective as a barrier layer under thermal loading only, and its effectiveness is impaired by tensile strain at the Cu/Ta interface. The simulations also clarified the mechanism that caused the impairment. The methodology and approach described in this paper can be followed further to study the effectiveness of barrier layers under various annealing and strain conditions, and to determine the minimum thickness of barrier layers required for a particular application.

Exploring the Room-Temperature Ferromagnetism and Temperature-Dependent Dielectric Properties of Sr/Ni-Doped LaFeO3 Nanoparticles Synthesized by Reverse Micelle Method

NASA Astrophysics Data System (ADS)

Naseem, Swaleha; Khan, Shakeel; Husain, Shahid; Khan, Wasi

2018-03-01

This paper reports the thermal, microstructural, dielectric and magnetic properties of La0.75Sr0.25Fe0.65Ni0.35O3 nanoparticles (NPs) synthesized via reverse micelle technique. The thermogravimetric analysis of as-prepared NPs confirmed a good thermal stability of the sample. Powder x-ray diffraction data analyzed with a Rietveld refinement technique revealed single-phase and orthorhombic distorted perovskite crystal structure of the NPs having Pbnm space group. The transmission electron microscopy images show the crystalline nature and formation of nanostructures with a fairly uniform distribution of particles throughout the sample. Temperature-dependent dielectric properties of the NPs in accordance with the Kramers-Kronig transformation (KKT) model, universal dielectric response model and jump relaxation model have been discussed. Electrode or interface polarization is likely the cause of the observed dielectric behavior. Due to grain boundaries and Schottky barriers of the metallic electrodes of semiconductors, the depletion region is observed, which gives rise to Maxwell-Wagner relaxation and hence high dielectric constants. Magnetic studies revealed the ferromagnetic nature of the prepared NPs upon Sr and Ni doping in LaFeO3 perovskite at room temperature. Therefore, these NPs could be a potential candidate as electrode material in solid oxide fuel cells.

High-Performance Ink-Synthesized Cu-Gate Thin-Film Transistor with Diffusion Barrier Formation

NASA Astrophysics Data System (ADS)

Woo, Whang Je; Nam, Taewook; Oh, Il-Kwon; Maeng, Wanjoo; Kim, Hyungjun

2018-02-01

The improved electrical properties of Cu-gate thin-film transistors (TFTs) using an ink-synthesizing process were studied; this technology enables a low-cost and large area process for the display industry. We investigated the film properties and the effects of the ink-synthesized Cu layer in detail with respect to device characteristics. The mobility and reliability of the devices were significantly improved by applying a diffusion barrier at the interface between the Cu gate and the gate insulator. By using a TaN diffusion barrier layer, considerably improved and stabilized ink-Cu gated TFTs could be realized, comparable to sputtered-Cu gated TFTs under positive bias temperature stress measurements.

High-Performance Ink-Synthesized Cu-Gate Thin-Film Transistor with Diffusion Barrier Formation

NASA Astrophysics Data System (ADS)

Woo, Whang Je; Nam, Taewook; Oh, Il-Kwon; Maeng, Wanjoo; Kim, Hyungjun

2018-05-01

The improved electrical properties of Cu-gate thin-film transistors (TFTs) using an ink-synthesizing process were studied; this technology enables a low-cost and large area process for the display industry. We investigated the film properties and the effects of the ink-synthesized Cu layer in detail with respect to device characteristics. The mobility and reliability of the devices were significantly improved by applying a diffusion barrier at the interface between the Cu gate and the gate insulator. By using a TaN diffusion barrier layer, considerably improved and stabilized ink-Cu gated TFTs could be realized, comparable to sputtered-Cu gated TFTs under positive bias temperature stress measurements.

The measurement of argon metastable atoms in the barrier discharge plasma

NASA Astrophysics Data System (ADS)

Ghildina, Anna R.; Mikheyev, Pavel Anatolyevich; Chernyshov, Aleksandr Konstantinovich; Lunev, Nikolai Nikolaevich; Azyazov, Valeriy Nikolaevich

2018-04-01

The mandatory condition for efficient operation of an optically-pumped all-rare-gas laser (OPRGL) is the presence of rare gas metastable atoms in the discharge plasma with number density of the order of 1012-1013 cm-3. This requirement mainly depends on the choice of a discharge system. In this study the number density values of argon metastable atoms were obtained in the condition of the dielectric-barrier discharge (DBD) at an atmospheric pressure.

Rotational dynamics of polyatomic ions in aqueous solutions: From continuum model to mode-coupling theory, aided by computer simulations.

PubMed

Banerjee, Puja; Bagchi, Biman

2018-06-14

Due to the presence of the rotational mode and the distributed surface charges, the dynamical behavior of polyatomic ions in water differs considerably from those of the monatomic ions. However, their fascinating dynamical properties have drawn scant attention. We carry out theoretical and computational studies of a series of well-known polyatomic ions, namely, sulfate, nitrate, and acetate ions. All three ions exhibit different rotational diffusivity, with that of the nitrate ion being considerably larger than the other two. They all defy the hydrodynamic laws of size dependence. Study of the local structure around the ions provides valuable insight into the origin of these differences. We carry out a detailed study of the rotational diffusion of these ions by extensive computer simulation and by using the theoretical approaches of the dielectric friction developed by Fatuzzo-Mason (FM) and Nee-Zwanzig (NZ), and subsequently generalized by Alavi and Waldeck. A critical element of the FM-NZ theory is the decomposition of the total rotational friction, ζ Rot , into Stokes and dielectric parts. The study shows a dominant role of dielectric friction in the sense that if the ions are made neutral, the nature of diffusion changes and the values become much larger. Our analyses further reveal that the decomposition of total friction into the Stokes and dielectric friction breaks down for sulfate ions but remains semi-quantitatively valid for nitrate and acetate ions. We discuss the relationship between translational and rotational dielectric friction on rigid spherical ions. We develop a self-consistent mode-coupling theory (SC-MCT) formalism that could provide a unified view of rotational friction of polyatomic ions in polar medium. Our SC-MCT shows that the breakdown can be attributed to the change in the microscopic structural features. The mode-coupling theory helps in elucidating the role of coupling between translational and rotational motion of these ions. In fact, these two motions self-consistently determine the value of each other. The reference interaction site model-based MCT suggests an interesting relation between the torque-torque and the force-force time correlation function with the proportionality constant being determined by the geometry and the charge distribution of the polyatomic molecule. We point out several parallelisms between the theories of translational and rotation friction calculations of ions in polar liquids.

Electric and Dielectric Properties of Au/ZnS-PVA/n-Si (MPS) Structures in the Frequency Range of 10-200 kHz

NASA Astrophysics Data System (ADS)

Baraz, Nalan; Yücedağ, İbrahim; Azizian-Kalandaragh, Yashar; Ersöz, Gülçin; Orak, İkram; Altındal, Şemsettin; Akbari, Bashir; Akbari, Hossein

2017-07-01

Pure polyvinyl alcohol (PVA) capped ZnS semiconductor nanocrystals were prepared by microwave-assisted method, and the optical and structural properties of the as-prepared materials were characterized by x-ray diffraction (XRD) and Ultraviolet-visible (UV-Vis) techniques. The XRD pattern shows the formation of ZnS nanocrystals, and the UV-Vis spectroscopy results show a blue shift of about 1.2 eV in its band gap due to the confinement of very small nanostructures. The concentration of donor atoms ( N D), diffusion potential ( V D), Fermi energy level ( E F), and barrier height (ΦB ( C- V)) values were obtained from the reverse bias C -2- V plots for each frequency. The voltage dependent profile of series resistance ( R s) and surface states ( N ss) were also obtained using admittance and low-high frequency methods, respectively. R s- V and N ss- V plots both have distinctive peaks in the depletion region due to the spatial distribution charge at the surface states. The effect of R s and interfacial layer on the C- V and G/ ω- V characteristics was found remarkable at high frequencies. Therefore, the high frequency C- V and G/ ω- V plots were corrected to eliminate the effect of R s. The real and imaginary parts of dielectric constant ( ɛ' and ɛ″) and electric modulus ( M' and M″), loss tangent (tan δ), and ac electrical conductivity ( σ ac) were also obtained using C and G/ ω data and it was found that these parameters are indeed strong functions of frequency and applied bias voltage. Experimental results confirmed that the N ss, R s , and interfacial layer of the MPS structure are important parameters that strongly influence both the electrical and dielectric properties. The low values of N ss ( 109 eV-1 cm-2) and the value of dielectric constant ( ɛ' = 1.3) of ZnS-PVA interfacial layer even at 10 kHz are very suitable for electronic devices when compared with the SiO2. These results confirmed that the ZnS-PVA considerably improves the performance of Au/n-Si (MS) structure and also allow it to work as a capacitor, which stores electric charges or energy.

Metal diffusion barriers for GaAs solar cells.

PubMed

van Leest, R H; Mulder, P; Bauhuis, G J; Cheun, H; Lee, H; Yoon, W; van der Heijden, R; Bongers, E; Vlieg, E; Schermer, J J

2017-03-15

In this study accelerated ageing testing (AAT), J-V characterization and TEM imaging in combination with phase diagram data from literature are used to assess the potential of Ti, Ni, Pd and Pt as diffusion barriers for Au/Cu-based metallization of III-V solar cells. Ni barriers show the largest potential as at an AAT temperature of 250 °C both cells with 10 and 100 nm thick Ni barriers show significantly better performance compared to Au/Cu cells, with the cells with 10 nm Ni barriers even showing virtually no degradation after 7.5 days at 250 °C (equivalent to 10 years at 100 °C at an E a of 0.70 eV). Detailed investigation shows that Ni does not act as a barrier in the classical sense, i.e. preventing diffusion of Cu and Au across the barrier. Instead Ni modifies or slows down the interactions taking place during device degradation and thus effectively acts as an 'interaction' barrier. Different interactions occur at temperatures below and above 250 °C and for thin (10 nm) and thick (100 nm) barriers. The results of this study indicate that 10-100 nm thick Ni intermediate layers in the Cu/Au based metallization of III-V solar cells may be beneficial to improve the device stability upon exposure to elevated temperatures.

Different approach to the modeling of nonfree particle diffusion

NASA Astrophysics Data System (ADS)

Buhl, Niels

2018-03-01

A new approach to the modeling of nonfree particle diffusion is presented. The approach uses a general setup based on geometric graphs (networks of curves), which means that particle diffusion in anything from arrays of barriers and pore networks to general geometric domains can be considered and that the (free random walk) central limit theorem can be generalized to cover also the nonfree case. The latter gives rise to a continuum-limit description of the diffusive motion where the effect of partially absorbing barriers is accounted for in a natural and non-Markovian way that, in contrast to the traditional approach, quantifies the absorptivity of a barrier in terms of a dimensionless parameter in the range 0 to 1. The generalized theorem gives two general analytic expressions for the continuum-limit propagator: an infinite sum of Gaussians and an infinite sum of plane waves. These expressions entail the known method-of-images and Laplace eigenfunction expansions as special cases and show how the presence of partially absorbing barriers can lead to phenomena such as line splitting and band gap formation in the plane wave wave-number spectrum.

Measurements and Simulations of Surface Dielectric Barrier Discharges Used as Plasma Actuators

NASA Technical Reports Server (NTRS)

Hoskinson, Alan R.

2012-01-01

This report is a Ph.D. dissertation performed under NRA cooperative agreement and submitted as part of the final report. Asymmetric surface dielectric barrier discharges (DBDs) have shown promise for use as aerodynamic actuators for active flow control. In this project we studied DBD actuators experimentally and numerically. Our DBDs used a symmetric triangular high voltage waveform to generate plasma in atmospheric pressure air. Time-averaged measurements indicated that the induced force of a single barrier actuator design (one electrode insulated from the plasma) can be increased exponentially above the results of previous studies by decreasing both the length and thickness of the electrode exposed to the plasma. This increased force may allow these devices to control flow separation in a wider range of flow environments. Experiments using an intensified digital camera to examine the plasma on time scales of a few nanoseconds showed that, in addition to the previously-observed filamentary and jet-like plasma structures, discharges with very thin exposed electrodes exhibited a weak but constant plasma immediately adjacent to those electrodes. In double-barrier actuators (both electrodes insulated), decreasing the diameter of the narrower electrode lead to increasing forces, and recorded images showed the simultaneous existence of both filamentary and jet-like plasma structures. The development and application of a time-dependent, two-dimensional computational fluid plasma model has aided in understanding the detailed physics of surface DBDs at all-time scales. For simulated single-barrier discharges, the model qualitatively reproduced the filamentary and jet-like micro-discharge structures. The model was somewhat successful in reproducing the observed characteristics of double-barrier actuators. For both actuator geometries, the model indicated that the majority of the forces induced on the neutral gas occur in between micro-discharges as the plasmas decay.

Functional Design of Dielectric-Metal-Dielectric-Based Thin-Film Encapsulation with Heat Transfer and Flexibility for Flexible Displays.

PubMed

Kwon, Jeong Hyun; Choi, Seungyeop; Jeon, Yongmin; Kim, Hyuncheol; Chang, Ki Soo; Choi, Kyung Cheol

2017-08-16

In this study, a new and efficient dielectric-metal-dielectric-based thin-film encapsulation (DMD-TFE) with an inserted Ag thin film is proposed to guarantee the reliability of flexible displays by improving the barrier properties, mechanical flexibility, and heat dissipation, which are considered to be essential requirements for organic light-emitting diode (OLED) encapsulation. The DMD-TFE, which is composed of Al 2 O 3 , Ag, and a silica nanoparticle-embedded sol-gel hybrid nanocomposite, shows a water vapor transmission rate of 8.70 × 10 -6 g/m 2 /day and good mechanical reliability at a bending radius of 30 mm, corresponding to 0.41% strain for 1000 bending cycles. The electrical performance of a thin-film encapsulated phosphorescent organic light-emitting diode (PHOLED) was identical to that of a glass-lid encapsulated PHOLED. The operational lifetimes of the thin-film encapsulated and glass-lid encapsulated PHOLEDs are 832 and 754 h, respectively. After 80 days, the thin-film encapsulated PHOLED did not show performance degradation or dark spots on the cell image in a shelf-lifetime test. Finally, the difference in lifetime of the OLED devices in relation to the presence and thickness of a Ag film was analyzed by applying various TFE structures to fluorescent organic light-emitting diodes (FOLEDs) that could generate high amounts of heat. To demonstrate the difference in heat dissipation effect among the TFE structures, the saturated temperatures of the encapsulated FOLEDs were measured from the back side surface of the glass substrate, and were found to be 67.78, 65.12, 60.44, and 39.67 °C after all encapsulated FOLEDs were operated at an initial luminance of 10 000 cd/m 2 for sufficient heat generation. Furthermore, the operational lifetime tests of the encapsulated FOLED devices showed results that were consistent with the measurements of real-time temperature profiles taken with an infrared camera. A multifunctional hybrid thin-film encapsulation based on a dielectric-metal-dielectric structure was thus effectively designed considering the transmittance, gas-permeation barrier properties, flexibility, and heat dissipation effect by exploiting the advantages of each separate layer.

Multiple Diffusion Mechanisms Due to Nanostructuring in Crowded Environments

PubMed Central

Sanabria, Hugo; Kubota, Yoshihisa; Waxham, M. Neal

2007-01-01

One of the key questions regarding intracellular diffusion is how the environment affects molecular mobility. Mostly, intracellular diffusion has been described as hindered, and the physical reasons for this behavior are: immobile barriers, molecular crowding, and binding interactions with immobile or mobile molecules. Using results from multi-photon fluorescence correlation spectroscopy, we describe how immobile barriers and crowding agents affect translational mobility. To study the hindrance produced by immobile barriers, we used sol-gels (silica nanostructures) that consist of a continuous solid phase and aqueous phase in which fluorescently tagged molecules diffuse. In the case of molecular crowding, translational mobility was assessed in increasing concentrations of 500 kDa dextran solutions. Diffusion of fluorescent tracers in both sol-gels and dextran solutions shows clear evidence of anomalous subdiffusion. In addition, data from the autocorrelation function were analyzed using the maximum entropy method as adapted to fluorescence correlation spectroscopy data and compared with the standard model that incorporates anomalous diffusion. The maximum entropy method revealed evidence of different diffusion mechanisms that had not been revealed using the anomalous diffusion model. These mechanisms likely correspond to nanostructuring in crowded environments and to the relative dimensions of the crowding agent with respect to the tracer molecule. Analysis with the maximum entropy method also revealed information about the degree of heterogeneity in the environment as reported by the behavior of diffusive molecules. PMID:17040979

Fabrication and characterization of oxide-based thin film transistors, and process development for oxide heterostructures

NASA Astrophysics Data System (ADS)

Lim, Wantae

2009-12-01

This dissertation is focused on the development of thin film transistors (TFTs) using oxide materials composed of post-transitional cations with (n-1)d 10ns0 (n≥4). The goal is to achieve high performance oxide-based TFTs fabricated at low processing temperature on either glass or flexible substrates for next generation display applications. In addition, etching mechanism and Ohmic contact formation for oxide heterostructure (ZnO/CuCrO 2) system is demonstrated. The deposition and characterization of oxide semiconductors (In 2O3-ZnO, and InGaZnO4) using a RF-magnetron sputtering system are studied. The main influence on the resistivity of the films is found to be the oxygen partial pressure in the sputtering ambient. The films remained amorphous and transparent (> 70%) at all process conditions. These films showed good transmittance at suitable conductivity for transistor fabrication. The electrical characteristics of both top- and bottom-gate type Indium Zinc Oxide (InZnO) and Indium Gallium Zinc Oxide (InGaZnO4)-based TFTs are reported. The InZnO films were favorable for depletion-mode TFTs due to their tendency to form oxygen vacancies, while enhancement-mode devices were realized with InGaZnO4 films. The InGaZnO4-based TFTs fabricated on either glass or plastic substrates at low temperature (<100°C) exhibit good electrical properties: the saturation mobility of 5--12 cm2.V-1.s-1 and threshold voltage of 0.5--2.5V. The devices are also examined as a function of aging time in order to verify long-term stability in air. The effect of gate dielectric materials on electrical properties of InGaZnO 4-based TFTs was investigated. The use of SiNx film as a gate dielectric reduces the trap density and the roughness at the channel/gate dielectric interface compared to SiO2 gate dielectric, resulting in an improvement of device parameters by reducing scattering of trapped charges at the interface. The quality of interface is shown to have large effect on TFT performance. Plasma etching process of ZnO was carried out using a variety of plasma chemistries: CH4/H2-, C2H6/H 2-, Cl2-, IBr-, ICl-, BI3- and BBr3/Ar. High fidelity pattern transfer can be achieved with practical etch rate and very smooth surface in methane-based chemistries, although the sidewall is not completely vertical. Threshold energy as low as 60 +/- 20 eV for all plasma chemistries was achieved, confirming that etching is driven by ion-assisted mechanism over the whole range of ion energy. Ohmic contacts to p-CuCrO2 are examined using borides (CrB2 and W2B5), nitrides (TaN and ZrN) and a high temperature metal (Ir). These materials are used as a diffusion barrier in Ni/Au based contacts, i.e., Ni/Au/X/Ti/Au metallization scheme, where X is the refractory material. A minimum specific contact resistance of ˜ 5x10 -4 O.cm2 was achieved for the Ir-containing contacts after annealing at temperature of 500--800°C for 60s in O2 ambient. The presence of Ir diffusion barrier increase the thermal stability of the contacts by ˜ 200 °C compared to conventional Ni/Au contacts. By sharp contrast, the use of other refractory materials led to the poorer thermal stability, with the contact resistance increasing sharply above 400°C.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Duan, Guo Xing; Hatchtel, Jordan; Shen, Xiao

Here, we investigate negative-bias temperature instabilities in SiGe pMOSFETs with SiO 2/HfO 2 gate dielectrics. The activation energies we measured for interface-trap charge buildup during negative-bias temperature stress were lower for SiGe channel pMOSFETs with SiO 2/HfO 2 gate dielectrics and Si capping layers than for conventional Si channel pMOSFETs with SiO 2 gate dielectrics. Electron energy loss spectroscopy and scanning transmission electron microscopy images demonstrate that Ge atoms can diffuse from the SiGe layer into the Si capping layer, which is adjacent to the SiO 2/HfO 2 gate dielectric. Density functional calculations show that these Ge atoms reduce themore » strength of nearby Si-H bonds and that Ge-H bond energies are still lower, thereby reducing the activation energy for interface-trap generation for the SiGe devices. Moreover, activation energies for oxide-trap charge buildup during negative-bias temperature stress are similarly small for SiGe pMOSFETs with SiO 2/HfO 2 gate dielectrics and Si pMOSFETs with SiO 2 gate dielectrics, suggesting that, in both cases, the oxide-trap charge buildup likely is rate-limited by hole tunneling into the near-interfacial SiO 2.« less

Effect of microwaves on the synthesis, structural and dielectric properties of Ca-modified BaTiO3 ceramics

NASA Astrophysics Data System (ADS)

Salhi, Abdelaziz; Sayouri, Salah-eddine; Jaber, Boujemaa; Omari, L.-Haj

2018-05-01

A pre-heat treatment with a domestic microwave, (MW), performed on gel-dry of sol gel processed Ca-modified BaTiO3, with the chemical formulation Ba1- x Ca x TiO3 such as x = 0, 1, 5, 10, 15, 20 and 30%, has been shown to lower the calcination temperature of these samples and to strongly influence their physicochemical properties. Indeed, X-ray diffraction and Raman characterizations of the samples revealed a gradual change from tetragonal to pseudo cubic phase with increasing x and a predominance of the occupation of the Ti-site for the composition x < 10 and that of the Ba-site for x ≥ 10. Dielectric measurements have shown that the temperature, T m, of the ferro-to-paraelectric transition is sensitive to the above-mentioned behavior, with a diffuse character of this transition; T m first decreases for the concentrations in x such as x < = 10 (predominance of occupation of Ti sites) before it increases for the compositions with x > 10 (predominance of occupation of Ba-sites). The thermal behavior of the permittivity has been approached by the modified Uchino's law, allowing the calculation of the dielectric parameters (diffuseness and relaxation parameters).

Dielectric properties of A- and B-site doped BaTiO 3: Effect of La and Ga

NASA Astrophysics Data System (ADS)

Gulwade, Devidas; Gopalan, Prakash

2009-06-01

Extremely small amounts of La and Ga doping on the A- and B-site of BaTiO 3, respectively, resulting in a solid solution of the type Ba 1-3xLa 2xTi 1-3yGa 4yO 3 have been investigated. The present work dwells on the influence of the individual dopants, namely La and Ga, on the dielectric properties of BaTiO 3. The compositions have been prepared by solid-state reaction. X-ray diffraction (XRD) reveals the presence of tetragonal (P4/mmm) phase. The XRD data has been analyzed using FULLPROF, a Rietveld refinement package. The microstructure have been studied by orientation imaging microscopy (OIM). The compositions have been characterized by dielectric spectroscopy between room temperature and 250 °C. Further, the nature of phase transition has been studied using high temperature XRD. The resulting compounds exhibit high dielectric constant, enhanced diffuseness and low temperature coefficient of capacitance.

General Protein Diffusion Barriers create Compartments within Bacterial Cells

PubMed Central

Schlimpert, Susan; Klein, Eric A.; Briegel, Ariane; Hughes, Velocity; Kahnt, Jörg; Bolte, Kathrin; Maier, Uwe G.; Brun, Yves V.; Jensen, Grant J.; Gitai, Zemer; Thanbichler, Martin

2013-01-01

SUMMARY In eukaryotes, the differentiation of cellular extensions such as cilia or neuronal axons depends on the partitioning of proteins to distinct plasma membrane domains by specialized diffusion barriers. However, examples of this compartmentalization strategy are still missing for prokaryotes, although complex cellular architectures are widespread among this group of organisms. This study reveals the existence of a protein-mediated membrane diffusion barrier in the stalked bacterium Caulobacter crescentus. We show that the Caulobacter cell envelope is compartmentalized by macromolecular complexes that prevent the exchange of both membrane and soluble proteins between the polar stalk extension and the cell body. The barrier structures span the cross-sectional area of the stalk and comprise at least four proteins that assemble in a cell cycle-dependent manner. Their presence is critical for cellular fitness, as they minimize the effective cell volume, allowing faster adaptation to environmental changes that require de novo synthesis of envelope proteins. PMID:23201141

Theoretical analysis of nBn infrared photodetectors

NASA Astrophysics Data System (ADS)

Ting, David Z.; Soibel, Alexander; Khoshakhlagh, Arezou; Gunapala, Sarath D.

2017-09-01

The depletion and surface leakage dark current suppression properties of unipolar barrier device architectures such as the nBn have been highly beneficial for III-V semiconductor-based infrared detectors. Using a one-dimensional drift-diffusion model, we theoretically examine the effects of contact doping, minority carrier lifetime, and absorber doping on the dark current characteristics of nBn detectors to explore some basic aspects of their operation. We found that in a properly designed nBn detector with highly doped excluding contacts the minority carriers are extracted to nonequilibrium levels under reverse bias in the same manner as the high operating temperature (HOT) detector structure. Longer absorber Shockley-Read-Hall (SRH) lifetimes result in lower diffusion and depletion dark currents. Higher absorber doping can also lead to lower diffusion and depletion dark currents, but the benefit should be weighted against the possibility of reduced diffusion length due to shortened SRH lifetime. We also briefly examined nBn structures with unintended minority carrier blocking barriers due to excessive n-doping in the unipolar electron barrier, or due to a positive valence band offset between the barrier and the absorber. Both types of hole blocking structures lead to higher turn-on bias, although barrier n-doping could help suppress depletion dark current.

Large size self-assembled quantum rings: quantum size effect and modulation on the surface diffusion.

PubMed

Tong, Cunzhu; Yoon, Soon Fatt; Wang, Lijun

2012-09-24

We demonstrate experimentally the submicron size self-assembled (SA) GaAs quantum rings (QRs) by quantum size effect (QSE). An ultrathin In0.1 Ga0.9As layer with different thickness is deposited on the GaAs to modulate the surface nucleus diffusion barrier, and then the SA QRs are grown. It is found that the density of QRs is affected significantly by the thickness of inserted In0.1 Ga0.9As, and the diffusion barrier modulation reflects mainly on the first five monolayer . The physical mechanism behind is discussed. The further analysis shows that about 160 meV decrease in diffusion barrier can be achieved, which allows the SA QRs with density of as low as one QR per 6 μm2. Finally, the QRs with diameters of 438 nm and outer diameters of 736 nm are fabricated using QSE.