Investigation of anodic and chemical oxides grown on p-type InP with applications to surface passivation for n(+)-p solar cell fabrication

NASA Technical Reports Server (NTRS)

Faur, Maria; Faur, Mircea; Goradia, Manju; Goradia, Chandra; Jenkins, Phillip; Jayne, Douglas; Weinberg, Irving

1991-01-01

Most of the previously reported InP anodic oxides were grown on a n-type InP with applications to fabrication of MISFET structures and were described as a mixture of In2O3 and P2O5 stoichiometric compounds or nonstoichiometric phases which have properties similar to crystalline compounds In(OH)3, InPO4, and In(PO3)3. Details of the compositional change of the anodic oxides grown under different anodization conditions were previously reported. The use of P-rich oxides grown either by anodic or chemical oxidation are investigated for surface passivation of p-type InP and as a protective cap during junction formation by closed-ampoule sulfur diffusion. The investigation is based on but not limited to correlations between PL intensity and X-ray photoelectron spectroscopy (XPS) chemical composition data.

Space radiation effects in InP solar cells

NASA Astrophysics Data System (ADS)

Walters, R. J.; Messenger, S. R.; Summers, G. P.; Burke, E. A.; Keavney, C. J.

1991-12-01

InP solar cells and mesa diodes grown by metalorganic chemical vapor deposition (MOCVD) were irradiated with electrons and protons at room temperature. The radiation-induced defects (RIDs) were characterized by deep level transient spectroscopy (DLTS), and the degradation of the solar cell performance was determined through I-V measurements. The nonionizing energy loss (NIEL) of electrons and protons in InP was calculated as a function of energy from 1 to 200 MeV and compared to the measured defect introduction rates. A linear dependence was evident. InP solar cells showed significantly more radiation resistance than c-Si or GaAs/Ge cells under 1 MeV electron irradiation. Using the calculated InP damage rates and measured damage factors, the performance of InP solar cells as a function of orbital altitude and time in orbit was predicted and compared with the performance of c-Si solar cells in the same environment. In all cases, the InP cells showed highly superior radiation resistance.

Radiation effects on p+n InP junctions grown by MOCVD

NASA Technical Reports Server (NTRS)

Messenger, Scott R.; Walters, Robert J.; Panunto, M. J.; Summers, Geoffrey P.

1994-01-01

The superior radiation resistance of InP over other solar cell materials such as Si or GaAs has prompted the development of InP cells for space applications. The early research on radiation effects in InP was performed by Yamaguchi and co-workers who showed that, in diffused p-InP junctions, radiation-induced defects were readily annealed both thermally and by injection, which was accompanied by significant cell recovery. More recent research efforts have been made using p-InP grown by metalorganic chemical vapor deposition (MOCVD). While similar deep level transient spectroscopy (DLTS) results were found for radiation induced defects in these cells and in diffused junctions, significant differences existed in the annealing characteristics. After injection annealing at room temperature, Yamaguchi noticed an almost complete recovery of the photovoltaic parameters, while the MOCVD samples showed only minimal annealing. In searching for an explanation of the different annealing behavior of diffused junctions and those grown by MOCVD, several possibilities have been considered. One possibility is the difference in the emitter structure. The diffused junctions have S-doped graded emitters with widths of approximately 0.3 micrometers, while the MOCVD emitters are often doped with Si and have widths of approximately 300A (0.03 micrometers). The difference in the emitter thickness can have important effects, e.g. a larger fraction of the total photocurrent is generated in the n-type material for thicker emitters. Therefore the properties of the n-InP material may explain the difference in the observed overall annealing behavior of the cells.

Investigation of the open-circuit voltage in wide-bandgap InGaP-host InP quantum dot intermediate-band solar cells

NASA Astrophysics Data System (ADS)

Aihara, Taketo; Tayagaki, Takeshi; Nagato, Yuki; Okano, Yoshinobu; Sugaya, Takeyoshi

2018-04-01

To analyze the open-circuit voltage (V oc) in intermediate-band solar cells, we investigated the current-voltage characteristics in wide-bandgap InGaP-based InP quantum dot (QD) solar cells. From the temperature dependence of the current-voltage curves, we show that the V oc in InP QD solar cells increases with decreasing temperature. We use a simple diode model to extract V oc at the zero-temperature limit, V 0, and the temperature coefficient C of the solar cells. Our results show that, while the C of InP QD solar cells is slightly larger than that of the reference InGaP solar cells, V 0 significantly decreases and coincides with the bandgap energy of the InP QDs rather than that of the InGaP host. This V 0 indicates that the V oc reduction in the InP QD solar cells is primarily caused by the breaking of the Fermi energy separation between the QDs and the host semiconductor in intermediate-band solar cells, rather than by enhanced carrier recombination.

Annealing of irradiated n+p InP buried homojunctions

NASA Technical Reports Server (NTRS)

Walters, Robert J.; Summers, Geoffrey P.; Timmons, M. L.; Venkatasubramanian, R.; Hancock, J. A.; Hills, J. S.

1994-01-01

At the last SPRAT conference, the Naval Research Laboratory (NRL) presented results from two experiments. One studied n+p diffused junction (DJ) InP solar cells, and the other studied n+p shallow homojunction (SHJ) InP mesa diodes grown by metalorganic chemical vapor deposition (MOCVD). The former work showed that a DJ solar cell in which the maximum power P(sub max) had been degraded by nearly 80 percent under irradiation recovered completely under short circuit illumination at 450K. The recovery was accompanied by the removal of all but one of the radiation-induced defect levels. The latter work, on the other hand, showed that the radiation-induced defects in the SHJ diodes did not anneal until the temperature reached 650K. These results suggest that an irradiated DJ solar cell, under illumination, will anneal at a temperature 200K lower than an irradiated SHJ cell. This is an unexpected result considering the similarity of the devices. The goal of the present research is to explain this different behavior. This paper investigates two points which arose from the previous studies. The first point is that the DJ cells were annealed under illumination while the SHJ diodes were annealed without bias. The second point investigated here is that the emitters of the DJ and SHJ devices were significantly different.

Diffusion lengths in irradiated N/P InP-on-Si solar cells

NASA Technical Reports Server (NTRS)

Wojtczuk, Steven; Colerico, Claudia; Summers, Geoffrey P.; Walters, Robert J.; Burke, Edward A.

1996-01-01

Indium phosphide (InP) solar cells were made on silicon (Si) wafers (InP/Si) by to take advantage of both the radiation-hardness properties of the InP solar cell and the light weight and low cost of Si wafers. The InP/Si cell application is for long duration and/or high radiation orbit space missions. Spire has made N/P InP/Si cells of sizes up to 2 cm by 4 cm with beginning-of-life (BOL) AM0 efficiencies over 13% (one-sun, 28C). These InP/Si cells have higher absolute efficiency and power density after a high radiation dose than gallium arsenide (GaAs) or silicon (Si) solar cells after a fluence of about 2e15 1 MeV electrons/sq. cm. In this work, we investigate the minority carrier (electron) base diffusion lengths in the N/P InP/Si cells. A quantum efficiency model was constructed for a 12% BOL AM0 N/P InP/Si cell which agreed well with the absolutely measured quantum efficiency and the sun-simulator measured AM0 photocurrent (30.1 mA/sq. cm). This model was then used to generate a table of AM0 photocurrents for a range of base diffusion lengths. AM0 photocurrents were then measured for irradiations up to 7.7e16 1 MeV electrons/sq. cm (the 12% BOL cell was 8% after the final irradiation). By comparing the measured photocurrents with the predicted photocurrents, base diffusion lengths were assigned at each fluence level. A damage coefficient K of 4e-8 and a starting (unirradiated) base electron diffusion length of 0.8 microns fits the data well. The quantum efficiency was measured again at the end of the experiment to verify that the photocurrent predicted by the model (25.5 mA/sq. cm) agreed with the simulator-measured photocurrent after irradiation (25.7 mA/sq. cm).

Low temperature Zn diffusion for GaSb solar cell structures fabrication

NASA Technical Reports Server (NTRS)

Sulima, Oleg V.; Faleev, Nikolai N.; Kazantsev, Andrej B.; Mintairov, Alexander M.; Namazov, Ali

1995-01-01

Low temperature Zn diffusion in GaSb, where the minimum temperature was 450 C, was studied. The pseudo-closed box (PCB) method was used for Zn diffusion into GaAs, AlGaAs, InP, InGaAs and InGaAsP. The PCB method avoids the inconvenience of sealed ampoules and proved to be simple and reproducible. The special design of the boat for Zn diffusion ensured the uniformality of Zn vapor pressure across the wafer surface, and thus the uniformity of the p-GaSb layer depth. The p-GaSb layers were studied using Raman scattering spectroscopy and the x-ray rocking curve method. As for the postdiffusion processing, an anodic oxidation was used for a precise thinning of the diffused GaSb layers. The results show the applicability of the PCB method for the large-scale production of the GaSb structures for solar cells.

Wafer-scale self-organized InP nanopillars with controlled orientation for photovoltaic devices.

PubMed

Sanatinia, Reza; Berrier, Audrey; Dhaka, Veer; Perros, Alexander P; Huhtio, Teppo; Lipsanen, Harri; Anand, Srinivasan

2015-10-16

A unique wafer-scale self-organization process for generation of InP nanopillars is demonstrated, which is based on maskless ion-beam etching (IBE) of InP developed to obtain the nanopillars, where the height, shape, and orientation of the nanopillars can be varied by controlling the processing parameters. The fabricated InP nanopillars exhibit broadband suppression of the reflectance, 'black InP,' a property useful for solar cells. The realization of a conformal p-n junction for carrier collection, in the fabricated solar cells, is achieved by a metalorganic vapor phase epitaxy (MOVPE) overgrowth step on the fabricated pillars. The conformal overgrowth retains the broadband anti-reflection property of the InP nanopillars, indicating the feasibility of this technology for solar cells. Surface passivation of the formed InP nanopillars using sulfur-oleylamine solution resulted in improved solar-cell characteristics. An open-circuit voltage of 0.71 V and an increase of 0.13 V compared to the unpassivated device were achieved.

Optical properties of Zn-diffused InP layers for the planar-type InGaAs/InP photodetectors

NASA Astrophysics Data System (ADS)

Chen, Guifeng; Wang, Mengxue; Yang, Wenxian; Tan, Ming; Wu, Yuanyuan; Dai, Pan; Huang, Yuyang; Lu, Shulong

2017-12-01

Zn diffusion into InP was carried out ex-situ using a new Zn diffusion technique with zinc phosphorus particles placed around InP materials as zinc source in a semi-closed chamber formed by a modified diffusion furnace. The optical characteristics of the Zn-diffused InP layer for the planar-type InGaAs/InP PIN photodetectors grown by molecular beam epitaxy (MBE) has been investigated by photoluminescence (PL) measurements. The temperature-dependent PL spectrum of Zn-diffused InP samples at different diffusion temperatures showed that band-to-acceptor transition dominates the PL emission, which indicates that Zn was commendably diffused into InP layer as the acceptor. High quality Zn-diffused InP layer with typically smooth surface was obtained at 580 °C for 10 min. Furthermore, more interstitial Zn atoms were activated to act as acceptors after a rapid annealing process. Based on the above Zn-diffusion technique, a 50 μm planar-type InGaAs/InP PIN photodector device was fabricated and exhibited a low dark current of 7.73 pA under a reverse bias potential of -5 V and a high breakdown voltage of larger than 41 V (I < 10 μA). In addition, a high responsivity of 0.81 A/W at 1.31 μm and 0.97 A/W at 1.55 μm was obtained in the developed PIN photodetector. Project supported by the Key R&D Program of Jiangsu Province (No. BE2016085) , the National Natural Science Foundation of China (Nos. 61674051), and the External Cooperation Program of BIC, Chinese Academy of Sciences (No. 121E32KYSB20160071).

Diffusion length damage coefficient and annealing studies in proton-irradiated InP

NASA Technical Reports Server (NTRS)

Hakimzadeh, Roshanak; Vargas-Aburto, Carlos; Bailey, Sheila G.; Williams, Wendell

1993-01-01

We report on the measurement of the diffusion length damage coefficient (K(sub L)) and the annealing characteristics of the minority carrier diffusion length (L(sub n)) in Czochralski-grown zinc-doped indium phosphide (InP), with a carrier concentration of 1 x 10(exp l8) cm(exp -3). In measuring K(sub L) irradiations were made with 0.5 MeV protons with fluences ranging from 1 x 10(exp 11) to 3 x 10(exp 13) cm(exp -2). Pre- and post-irradiation electron-beam induced current (EBIC) measurements allowed for the extraction of L(sub n) from which K(sub L) was determined. In studying the annealing characteristics of L(sub n) irradiations were made with 2 MeV protons with fluence of 5 x 10(exp 13) cm(exp -2). Post-irradiation studies of L(sub n) with time at room temperature, and with minority carrier photoinjection and forward-bias injection were carried out. The results showed that recovery under Air Mass Zero (AMO) photoinjection was complete. L(sub n) was also found to recover under forward-bias injection, where recovery was found to depend on the value of the injection current. However, no recovery of L(sub n) after proton irradiation was observed with time at room temperature, in contrast to the behavior of 1 MeV electron-irradiated InP solar cells reported previously.

Summary of Workshop on InP: Status and Prospects

NASA Technical Reports Server (NTRS)

Walters, R. J.; Weinberg, I.

1994-01-01

The primary objective of most of the programs in InP solar cells is the development of the most radiation hard solar cell technology. In the workshop, it was generally agreed that the goal is a cell which displays high radiation tolerance in a radiation environment equivalent to a 1 MeV electron fluence of about 10(exp 16)/sq cm. Furthermore, it is desired that the radiation response of the cell be essentially flat out to this fluence - i.e. that the power output of the cell not decrease from its beginning of life (BOL) value in this radiation environment. It was also agreed in the workshop that the manufacturability of InP solar cells needs to be improved. In particular, since InP wafers are relatively dense and brittle, alternative substrates need to be developed. Research on hetero-epitaxial InP cells grown on Si, Ge, and GaAs substrates is currently underway. The ultimate goal is to develop hetero-epitaxial InP solar cells using a cheap, strong, and lightweight substrate.

Temperature coefficients and radiation induced DLTS spectra of MOCVD grown n(+)p InP solar cells

NASA Technical Reports Server (NTRS)

Walters, Robert J.; Statler, Richard L.; Summers, Geoffrey P.

1991-01-01

The effects of temperature and radiation on n(+)p InP solar cells and mesa diodes grown by metallorganic chemical vapor deposition (MOCVD) were studied. It was shown that MOCVD is capable of consistently producing good quality InP solar cells with Eff greater than 19 percent which display excellent radiation resistance due to minority carrier injection and thermal annealing. It was also shown that universal predictions of InP device performance based on measurements of a small group of test samples can be expected to be quite accurate, and that the degradation of an InP device due to any incident particle spectrum should be predictable from a measurement following a single low energy proton irradiation.

Performance, Defect Behavior and Carrier Enhancement in Low Energy, Proton Irradiated p(+)nn(+) InP Solar Cells

NASA Technical Reports Server (NTRS)

Weinberg, I.; Rybicki, G. C.; Vargas-Aburto, C.; Jain, R. K.; Scheiman, D.

1994-01-01

InP p(+)nn(+) cells, processed by MOCVD, were irradiated by 0.2 MeV protons and their performance and defect behavior observed to a maximum fluence of 10(exp 13)/sq cm. Their radiation induced degradation, over this fluence range, was considerably+less than observed for similarly irradiated, diffused junction n p InP cells. Significant degradation occurred in both the cell's emitter and base regions the least degradation occurring in the depletion region. A significant increase in series resistance occurs at the highest fluenc.e. Two majority carrier defect levels, E7 and E10, are observed by DLTS with activation energies at (E(sub C) - 0.39)eV and (E(sub C) - 0.74)eV respectively. The relative concentration of these defects differs considerably from that observed after 1 MeV electron irradiation. An increased carrier concentration in the cell's n-region was observed at the highest proton fluence, the change in carrier concentration being insignificant at the lower fluences. In agreement with previous results, for 1 and 1.5 MeV electron irradiated InP p(+)n junctions, the defect level E10 is attributed to a complex between zinc, diffused into the n-region from the zinc doped emitter, and a radiation induced defect. The latter is assumed to be either a phosphorus vacancy or interstitial. The increased, or enhanced carrier concentration is attributed to this complex acting as a donor.

Nonepitaxial Thin-Film InP for Scalable and Efficient Photocathodes.

PubMed

Hettick, Mark; Zheng, Maxwell; Lin, Yongjing; Sutter-Fella, Carolin M; Ager, Joel W; Javey, Ali

2015-06-18

To date, some of the highest performance photocathodes of a photoelectrochemical (PEC) cell have been shown with single-crystalline p-type InP wafers, exhibiting half-cell solar-to-hydrogen conversion efficiencies of over 14%. However, the high cost of single-crystalline InP wafers may present a challenge for future large-scale industrial deployment. Analogous to solar cells, a thin-film approach could address the cost challenges by utilizing the benefits of the InP material while decreasing the use of expensive materials and processes. Here, we demonstrate this approach, using the newly developed thin-film vapor-liquid-solid (TF-VLS) nonepitaxial growth method combined with an atomic-layer deposition protection process to create thin-film InP photocathodes with large grain size and high performance, in the first reported solar device configuration generated by materials grown with this technique. Current-voltage measurements show a photocurrent (29.4 mA/cm(2)) and onset potential (630 mV) approaching single-crystalline wafers and an overall power conversion efficiency of 11.6%, making TF-VLS InP a promising photocathode for scalable and efficient solar hydrogen generation.

Key factors limiting the open circuit voltage of n(+)pp(+) indium phosphide solar cells

NASA Technical Reports Server (NTRS)

Goradia, Chandra; Thesling, William; Weinberg, Irving

1991-01-01

Solar cells made from gallium arsenide (GaAs), with a room temperature bandgap of E(sub g) = 1.43 eV have exhibited the best measured open circuit voltage (V sub OC) of 1.05 V at 1 AMO, 25 C. The material InP is in many ways similar to GaAs. A simple calculation comparing InP to GaAs then shows that solar cells made from InP, with E(sub g) = 1.35 at 300 K, should exhibit the best measured (V sub OC) of approximately 950 mV at 1 AMO, 300 K. However, to date, the best measured V(sub OC) for InP solar cells made by any fabrication method is 899 mV at AM1.5, 25 C which would translate to 912 mV at 1 AMO, 25 C. The V(sub OC) of an n(+)pp(+) InP solar cell is governed by several factors. Of these, some factors, such as the thickness and doping of the emitter and base regions, are easily controlled and can be adjusted to desired values dictated by a good performance optimizing model. Such factors were not considered. There are other factors which also govern V(sub OC), and their values are not so easily controlled. The primary ones among these are (1) the indirect or Hall-Shockley-Read lifetimes in the various regions of the cell, (2) the low-doping intrinsic carrier concentration n(sub i) of the InP material, (3) the heavy doping factors in the emitter and BSF regions, and (4) the front surface recombination velocity S(sub F). The influence of these latter factors on the V(sub OC) of the n(+)pp(+) InP solar cell and the results were used to produce a near-optimum design of the n(+)pp(+) InP solar cell.

Recent developments in indium phosphide space solar cell research

NASA Technical Reports Server (NTRS)

Brinker, David J.; Weinberg, Irving

1987-01-01

Recent developments and progress in indium phosphide solar cell research for space application are reviewed. Indium phosphide homojunction cells were fabricated in both the n+p and p+n configurations with total area efficiencies of 17.9 and 15.9% (air mass 0 and 25 C) respectively. Organometallic chemical vapor deposition, liquid phase epitaxy, ion implantation and diffusion techniques were employed in InP cell fabrication. A theoretical model of a radiation tolerant, high efficiency homojunction cell was developed. A realistically attainable AMO efficiency of 20.5% was calculated using this model with emitter and base doping of 6 x 10 to the 17th power and 5 x 10 the the 16th power/cu cm respectively. Cells of both configurations were irradiated with 1 MeV electrons and 37 MeV protons. For both proton and electron irradiation, the n+p cells are more radiation resistant at higher fluences than the p+n cells. The first flight module of four InP cells was assembled for the Living Plume Shield III satellite.

A comparative study of performance parameters of n(+)-p InP solar cells made by closed-ampoule sulfur diffusion into Cd- and Zn-doped p-type InP substrates

NASA Technical Reports Server (NTRS)

Faur, Mircea; Faur, Maria; Goradia, Chandra; Goradia, Manju; Thomas, Ralph D.; Brinker, David J.; Fatemi, Navid S.; Honecy, Frank S.

1991-01-01

Preliminary results indicate that Cd-doped substrates are better candidates for achieving high efficiency solar cells fabricated by closed-ampoule sulfur (S) diffusion than Zn-doped substrates. The differences in performance parameters (i.e., 14.3 percent efficiency for Cd-doped vs. 11.83 percent in the case of Zn-doped substrates of comparable doping and etch pit densities) were explained in terms of a large increase in dislocation density as a result of S diffusion in the case of Zn-doped as compared to Cd-doped substrates. The In(x)S(y) and probably Zn(S) precipitates in the case of Zn-doped substrates, produce a dead layer which extends deep below the surface and strongly affects the performance parameters. It should be noted that the cells had an unoptimized single layer antireflective coating of SiO, a grid shadowing of 6.25 percent, and somewhat poor contacts, all contributing to a reduction in efficiency. It is believed that by reducing the external losses and further improvement in cell design, efficiencies approaching 17 percent at 1 AMO, 25 degrees should be possible for cells fabricated on these relatively high defect density Cd-doped substrates. Even higher efficiencies, 18 to 19 percent should be possible by using long-lifetime substrates and further improving front surface passivation. If solar cells fabricated on Cd-doped substrates turn out to have comparable radiation tolerance as those reported in the case of cells fabricated on Zn-doped substrates, then for certain space missions 18 to 19 percent efficient cells made by this method of fabrication would be viable.

Monolithic tandem solar cell

DOEpatents

Wanlass, Mark W.

1991-01-01

A single-crystal, monolithic, tandem, photovoltaic solar cell is described which includes (a) an InP substrate having upper and lower surfaces, (b) a first photoactive subcell on the upper surface of the InP substrate, and (c) a second photoactive subcell on the first subcell. The first photoactive subcell is GaInAsP of defined composition. The second subcell is InP. The two subcells are lattice matched. The solar cell can be provided as a two-terminal device or a three-terminal device.

Indium phosphide solar cell research in the United States: Comparison with non-photovoltaic sources

NASA Technical Reports Server (NTRS)

Weinberg, I.; Swartz, C. K.; Hart, R. E., Jr.

1989-01-01

Highlights of the InP solar cell research program are presented. Homojunction cells with efficiencies approaching 19 percent are demonstrated, while 17 percent is achieved for ITO/InP cells. The superior radiation resistance of the two latter cell configurations over both Si and GaAs cells has been shown. InP cells aboard the LIPS3 satellite show no degradation after more than a year in orbit. Computed array specific powers are used to compare the performance of an InP solar cell array to solar dynamic and nuclear systems.

Enhanced monolayer MoS2/InP heterostructure solar cells by graphene quantum dots

NASA Astrophysics Data System (ADS)

Wang, Peng; Lin, Shisheng; Ding, Guqiao; Li, Xiaoqiang; Wu, Zhiqian; Zhang, Shengjiao; Xu, Zhijuan; Xu, Sen; Lu, Yanghua; Xu, Wenli; Zheng, Zheyang

2016-04-01

We demonstrate significantly improved photovoltaic response of monolayer molybdenum disulfide (MoS2)/indium phosphide (InP) van der Waals heterostructure induced by graphene quantum dots (GQDs). Raman and photoluminescence measurements indicate that effective charge transfer takes place between GQDs and MoS2, which results in n-type doping of MoS2. The doping effect increases the barrier height at the MoS2/InP heterojunction, thus the averaged power conversion efficiency of MoS2/InP solar cells is improved from 2.1% to 4.1%. The light induced doping by GQD provides a feasible way for developing more efficient MoS2 based heterostructure solar cells.

Systems and methods for advanced ultra-high-performance InP solar cells

DOEpatents

Wanlass, Mark

2017-03-07

Systems and Methods for Advanced Ultra-High-Performance InP Solar Cells are provided. In one embodiment, an InP photovoltaic device comprises: a p-n junction absorber layer comprising at least one InP layer; a front surface confinement layer; and a back surface confinement layer; wherein either the front surface confinement layer or the back surface confinement layer forms part of a High-Low (HL) doping architecture; and wherein either the front surface confinement layer or the back surface confinement layer forms part of a heterointerface system architecture.

Limits to Maximum Absorption Length in Waveguide Photodiodes

DTIC Science & Technology

2011-04-13

InGaAsP to InGaAs graded layer (35 nm), a very thin undoped InGaAs absorber layer (20 nm), a p- InP cla~din~ layer (1 J.Lm, Zn = 1x1018 em·\\ a p- InP ...expected excess opticall_oss results from non-ideal coupling, excess waveguide scattering, Zn diffusion from the p-doped InP , larger than...waveguide scattering, Zn diffusion from the p-doped InP , n-doped region absorption, or a combination of the above. The SCOWPD has demonst:r:ated an

Electrochemical characterization of p(+)n and n(+)p diffused InP structures

NASA Technical Reports Server (NTRS)

Wilt, David M.; Faur, Maria; Faur, Mircea; Goradia, M.; Vargas-Aburto, Carlos

1993-01-01

The relatively well documented and widely used electrolytes for characterization and processing of Si and GaAs-related materials and structures by electrochemical methods are of little or no use with InP because the electrolytes presently used either dissolve the surface preferentially at the defect areas or form residual oxides and introduce a large density of surface states. Using an electrolyte which was newly developed for anodic dissolution of InP, and was named the 'FAP' electrolyte, accurate characterization of InP related structures including nature and density of surface states, defect density, and net majority carrier concentration, all as functions of depth was performed. A step-by-step optimization of n(+)p and p(+)n InP structures made by thermal diffusion was done using the electrochemical techniques, and resulted in high performance homojunction InP structures.

Potential for use of InP solar cells in the space radiation environment

NASA Technical Reports Server (NTRS)

Weinberg, I.; Swartz, C. K.; Hart, R. E., Jr.

1985-01-01

Indium phosphide solar cells were observed to have significantly higher radiation resistance than either GaAs or Si after exposure to 10 MeV proton irradiation data and previous 1 MeV electron data together with projected efficiencies for InP, it was found that these latter cells produced more output power than either GaAs or Si after specified fluences of 10 MeV protons and 1 MeV electrons. Estimates of expected performance in a proton dominated space orbit yielded much less degradation for InP when compared to the remaining two cell types. It was concluded that, with additional development to increase efficiency, InP solar cells would perform significantly better than either GaAs or Si in the space radiation environment.

High Efficiency InP Solar Cells from Low Toxicity Tertiarybutylphosphine

NASA Technical Reports Server (NTRS)

Hoffman, Richard W., Jr.; Fatemi, Navid S.; Wilt, David M.; Jenkins, Phillip P.; Brinker, David J.; Scheiman, David A.

1994-01-01

Large scale manufacture of phosphide based semiconductor devices by organo-metallic vapor phase epitaxy (OMVPE) typically requires the use of highly toxic phosphine. Advancements in phosphine substitutes have identified tertiarybutylphosphine (TBP) as an excellent precursor for OMVPE of InP. High quality undoped and doped InP films were grown using TBP and trimethylindium. Impurity doped InP films were achieved utilizing diethylzinc and silane for p and n type respectively. 16 percent efficient solar cells under air mass zero, one sun intensity were demonstrated with Voc of 871 mV and fill factor of 82.6 percent. It was shown that TBP could replace phosphine, without adversely affecting device quality, in OMVPE deposition of InP thus significantly reducing toxic gas exposure risk.

Indium phosphide solar cell research in the US: Comparison with nonphotovoltaic sources

NASA Technical Reports Server (NTRS)

Weinberg, I.; Swartz, C. K.; Hart, R. E., Jr.

1989-01-01

Highlights of the InP solar cell research program are presented. Homojunction cells with AMO efficiences approaching 19 percent were demonstrated while 17 percent was achieved for indium tin oxide (ITO)/InP cells. The superior radiation resistance of these latter two cell configurations over both Si and GaAs were demonstrated. InP cells on board the LIPS III satellite show no degradation after more than a year in orbit. Computer modeling calculations were directed toward radiation damage predictions and the specification of concentrator cell parameters. Computed array specific powers, for a specific orbit, are used to compare the performance of an InP solar cell array to solar dynamic and nuclear systems.

Comparative modeling of InP solar cell structures

NASA Technical Reports Server (NTRS)

Jain, R. K.; Weinberg, I.; Flood, D. J.

1991-01-01

The comparative modeling of p(+)n and n(+)p indium phosphide solar cell structures is studied using a numerical program PC-1D. The optimal design study has predicted that the p(+)n structure offers improved cell efficiencies as compared to n(+)p structure, due to higher open-circuit voltage. The various cell material and process parameters to achieve the maximum cell efficiencies are reported. The effect of some of the cell parameters on InP cell I-V characteristics was studied. The available radiation resistance data on n(+)p and p(+)p InP solar cells are also critically discussed.

Progress in p(+)n InP solar cells fabricated by thermal diffusion

NASA Technical Reports Server (NTRS)

Faur, Mircea; Faur, Maria; Flood, D. J.; Brinker, D. J.; Weinberg, I.; Fatemi, N. S.; Vargas-Aburto, Carlos; Goradia, C.; Goradia, Manju

1992-01-01

In SPRAT XI, we proposed that p(sup +)n diffused junction InP solar cells should exhibit a higher conversion efficiency than their n(sup +)p counterparts. This was mainly due to the fact that our p(sup +)n (Cd,S) cell structures consistently showed higher V (sub OC) values than our n(sup +)p (S,Cd) structures. The highest V(sub OC) obtained with the p(sup +)n (Cd,S) cell configuration was 860 mV, as compared to the highest V(sub OC) 840 mV obtained with the n(sup +)p (S,Cd) configuration (AMO, 25 C). In this work, we present the performance results of our most recent thermally diffused cells using the p(sup +)n (Cd,S) structure. We have been able to fabricate cells with V(sub OC) values approaching 880 mV. Our best cell with an unoptimized front contact grid design (GS greater than or equal to 10%) showed a conversion efficiency of 13.4% (AMO, 25 C) without an AR coating layer. The emitter surface was passivated by a -50A P rich oxide. Achievement of such high V(sub OC) values was primarily due to the fabrication of emitter surfaces, having EPD densities as low as 2E2 cm(sup -2) and N(sub a)N(sub d) of about 3E18 cm (sup -3). In addition, our preliminary investigation of p(sup +)n structures seem to suggest that Cd-doped emitter cells are more radiation resistant than Zn-doped emitter cells against both high energy electron and proton irradiation.

Performance of Ga(0.47)In(0.53)As cells over a range of proton energies

NASA Technical Reports Server (NTRS)

Weinberg, I.; Jain, R. K.; Vargasaburto, C.; Wilt, D. M.; Scheiman, D. A.

1995-01-01

Ga(0.47)In(0.53)As solar cells were processed by OMVPE and their characteristics determined at proton energies of 0.2, 0.5, and 3 MeV. Emphasis was on characteristics applicable to use of this cell as the low bandgap member of a monolithic, two terminal high efficiency InP/GaInAs cell. It was found that the radiation induced degradation in efficiency, I(sub SC), V(sub OC) and diffusion length increased with decreasing proton energy. When efficiency degradations were compared with InP it was observed that the present cells showed considerably more degradation over the entire energy range. Similar to InP, R(sub C), the carrier removal rate, decreased with increasing proton energy. However, numerical values for R(sub C) differed from those observed with InP. The difference is attributed to differing defect behavior between the two cell types. It was concluded that particular attention should be paid to the effects of low energy protons especially when the particle's track ends in one cell of the multibandgap device.

Monolithic tandem solar cell

DOEpatents

Wanlass, M.W.

1994-06-21

A single-crystal, monolithic, tandem, photovoltaic solar cell is described which includes (a) an InP substrate having upper and lower surfaces, (b) a first photoactive subcell on the upper surface of the InP substrate, (c) a second photoactive subcell on the first subcell; and (d) an optically transparent prismatic cover layer over the second subcell. The first photoactive subcell is GaInAsP of defined composition. The second subcell is InP. The two subcells are lattice matched. 9 figs.

Monolithic tandem solar cell

DOEpatents

Wanlass, Mark W.

1994-01-01

A single-crystal, monolithic, tandem, photovoltaic solar cell is described which includes (a) an InP substrate having upper and lower surfaces, (b) a first photoactive subcell on the upper surface of the InP substrate, (c) a second photoactive subcell on the first subcell; and (d) an optically transparent prismatic cover layer over the second subcell. The first photoactive subcell is GaInAsP of defined composition. The second subcell is InP. The two subcells are lattice matched.

Workshop on Heteroepitaxial InP Solar Cells

NASA Technical Reports Server (NTRS)

Weinberg, I.; Walters, R. W.

1993-01-01

In a generic sense, the justification for any sort of InP solar cell research applies, i.e. to take advantage of the inherently high radiation resistance and efficiency of InP solar cells. To be more specific, the approach is justified by its potential for significant cost reduction and the availability of greatly increased cell area afforded by substrates such as Si and Ge. The use of substrates, such as the latter two, would result in increased ruggedness, ease of handling, and improved manufacturability. The use of more rugged substrates would lead to a greatly increased capability for cell thinning leading to the desirable feature of reduced array weight.

Deposition of InP on Si Substrates for Monolithic Integration of Advanced Electronics

DTIC Science & Technology

1988-05-01

radiation resistance of InP has been demonstrated (in terms of solar cell experiments) to be quite superior to that of either GaAs or Si.( 1 , 2) In fact... photovoltaic p/n junction devices irradiated by I MeV electrons have been shown to almost totallv recover their electrical performance by annealing at...in the literature.(l5 2 2) The NTT group has succeeded in growing InP films directly on Si substrates and in fabricating solar cells (approximately 3

Low-Cost High-Efficiency Solar Cells with Wafer Bonding and Plasmonic Technologies

NASA Astrophysics Data System (ADS)

Tanake, Katsuaki

We fabricated a direct-bond interconnected multijunction solar cell, a two-terminal monolithic GaAs/InGaAs dual-junction cell, to demonstrate a proof-of-principle for the viability of direct wafer bonding for solar cell applications. The bonded interface is a metal-free n+GaAs/n +InP tunnel junction with highly conductive Ohmic contact suitable for solar cell applications overcoming the 4% lattice mismatch. The quantum efficiency spectrum for the bonded cell was quite similar to that for each of unbonded GaAs and InGaAs subcells. The bonded dual-junction cell open-circuit voltage was equal to the sum of the unbonded subcell open-circuit voltages, which indicates that the bonding process does not degrade the cell material quality since any generated crystal defects that act as recombination centers would reduce the open-circuit voltage. Also, the bonded interface has no significant carrier recombination rate to reduce the open circuit voltage. Engineered substrates consisting of thin films of InP on Si handle substrates (InP/Si substrates or epitaxial templates) have the potential to significantly reduce the cost and weight of compound semiconductor solar cells relative to those fabricated on bulk InP substrates. InGaAs solar cells on InP have superior performance to Ge cells at photon energies greater than 0.7 eV and the current record efficiency cell for 1 sun illumination was achieved using an InGaP/GaAs/InGaAs triple junction cell design with an InGaAs bottom cell. Thermophotovoltaic (TPV) cells from the InGaAsP-family of III-V materials grown epitaxially on InP substrates would also benefit from such an InP/Si substrate. Additionally, a proposed four-junction solar cell fabricated by joining subcells of InGaAs and InGaAsP grown on InP with subcells of GaAs and AlInGaP grown on GaAs through a wafer-bonded interconnect would enable the independent selection of the subcell band gaps from well developed materials grown on lattice matched substrates. Substitution of InP/Si substrates for bulk InP in the fabrication of such a four-junction solar cell could significantly reduce the substrate cost since the current prices for commercial InP substrates are much higher than those for Si substrates by two orders of magnitude. Direct heteroepitaxial growth of InP thin films on Si substrates has not produced the low dislocation-density high quality layers required for active InGaAs/InP in optoelectronic devices due to the ˜8% lattice mismatch between InP and Si. We successfully fabricated InP/Si substrates by He implantation of InP prior to bonding to a thermally oxidized Si substrate and annealing to exfoliate an InP thin film. The thickness of the exfoliated InP films was only 900 nm, which means hundreds of the InP/Si substrates could be prepared from a single InP wafer in principle. The photovoltaic current-voltage characteristics of the In0.53Ga0.47As cells fabricated on the wafer-bonded InP/Si substrates were comparable to those synthesized on commercially available epi-ready InP substrates, and had a ˜20% higher short-circuit current which we attribute to the high reflectivity of the InP/SiO2/Si bonding interface. This work provides an initial demonstration of wafer-bonded InP/Si substrates as an alternative to bulk InP substrates for solar cell applications. We have observed photocurrent enhancements up to 260% at 900 nm for a GaAs cell with a dense array of Ag nanoparticles with 150 nm diameter and 20 nm height deposited through porous alumina membranes by thermal evaporation on top of the cell, relative to reference GaAs cells with no metal nanoparticle array. This dramatic photocurrent enhancement is attributed to the effect of metal nanoparticles to scatter the incident light into photovoltaic layers with a wide range of angles to increase the optical path length in the absorber layer. GaAs solar cells with metallic structures at the bottom of the photovoltaic active layers, not only at the top, using semiconductor-metal direct bonding have been fabricated. These metallic back structures could incouple the incident light into surface plasmon mode propagating at the semiconductor/metal interface to increase the optical path, as well as simply act as back reflector, and we have observed significantly increased short-circuit current relative to reference cells without these metal components. (Abstract shortened by UMI.)

InP concentrator solar cells for space applications

NASA Technical Reports Server (NTRS)

Ward, J. S.; Wanlass, M. W.; Coutts, T. J.; Emery, K. A.

1991-01-01

The design, fabrication, and characterization of high-performance, n(+)/p InP shallow-homojunction (SHJ) concentrator solar cells is described. The InP device structures were grown by atmospheric-pressure metalorganic vapor phase epitaxy (APMOVPE). A preliminary assessment of the effects of grid collection distance and emitter sheet resistance on cell performance is presented. At concentration ratios of over 100, cells with AM0 efficiencies in excess of 21 percent at 25 C and 19 percent at 80 C are reported. These results indicate that high-efficiency InP concentrator cells can be fabricated using existing technologies. The performance of these cells as a function of temperature is discussed, and areas for future improvement are outlined.

InP solar cell with window layer

NASA Technical Reports Server (NTRS)

Jain, Raj K. (Inventor); Landis, Geoffrey A. (Inventor)

1994-01-01

The invention features a thin light transmissive layer of the ternary semiconductor indium aluminum arsenide (InAlAs) as a front surface passivation or 'window' layer for p-on-n InP solar cells. The window layers of the invention effectively reduce front surface recombination of the object semiconductors thereby increasing the efficiency of the cells.

Encapsulation and Implantation Studies of InP.

DTIC Science & Technology

1982-07-01

concluded that PSG encapsulation best preserves the initial characteristics of encapsulated InP during furnace anneals. ( t PL measurements indicate that...gradients in these zones than does Fe. Under typical annealing conditions for InP ( T > 700 C, t = 15-30 min) it is observed using SIMS that implanted 9Be...conditions for InP ( T > 700*C, t - 15-30 min) it is observed using SIMS that implanted 9Be is a rapid diffusant in SI InP. High dose (1015 cm -2

19.2% Efficient InP Heterojunction Solar Cell with Electron-Selective TiO2 Contact

PubMed Central

2015-01-01

We demonstrate an InP heterojunction solar cell employing an ultrathin layer (∼10 nm) of amorphous TiO2 deposited at 120 °C by atomic layer deposition as the transparent electron-selective contact. The TiO2 film selectively extracts minority electrons from the conduction band of p-type InP while blocking the majority holes due to the large valence band offset, enabling a high maximum open-circuit voltage of 785 mV. A hydrogen plasma treatment of the InP surface drastically improves the long-wavelength response of the device, resulting in a high short-circuit current density of 30.5 mA/cm2 and a high power conversion efficiency of 19.2%. PMID:25679010

19.2% Efficient InP Heterojunction Solar Cell with Electron-Selective TiO2 Contact.

PubMed

Yin, Xingtian; Battaglia, Corsin; Lin, Yongjing; Chen, Kevin; Hettick, Mark; Zheng, Maxwell; Chen, Cheng-Ying; Kiriya, Daisuke; Javey, Ali

2014-12-17

We demonstrate an InP heterojunction solar cell employing an ultrathin layer (∼10 nm) of amorphous TiO 2 deposited at 120 °C by atomic layer deposition as the transparent electron-selective contact. The TiO 2 film selectively extracts minority electrons from the conduction band of p-type InP while blocking the majority holes due to the large valence band offset, enabling a high maximum open-circuit voltage of 785 mV. A hydrogen plasma treatment of the InP surface drastically improves the long-wavelength response of the device, resulting in a high short-circuit current density of 30.5 mA/cm 2 and a high power conversion efficiency of 19.2%.

Hydrogen passivation of N(+)-P and P(+)-N heteroepitaxial InP solar cell structures

NASA Technical Reports Server (NTRS)

Chatterjee, Basab; Davis, William C.; Ringel, Steve A.; Hoffman, Richard, Jr.

1996-01-01

Dislocations and related point defect complexes caused by lattice mismatch currently limit the performance of heteroepitaxial InP cells by introducing shunting paths across the active junction and by the formation of deep traps within the base region. We have previously demonstrated that plasma hydrogenation is an effective and stable means to passivate the electrical activity of such defects in specially designed heteroepitaxial InP test structures to probe hydrogen passivation at typical base depths within a cell structure. In this work, we present our results on the hydrogen passivation of actual heteroepitaxial n-p and p-n InP cell structures grown on GaAs substrates by metalorganic chemical vapor deposition (MOCVD). We have found that a 2 hour exposure to a 13.56 MHz hydrogen plasma at 275 C reduces the deep level concentration in the base regions of both n(+)-p and p(+)-n heteroepitaxial InP cell structures from as-grown values of 5-7 x 10(exp 14) cm(exp -3), down to 3-5 x 10(exp 12) cm(exp -3). All dopants were successfully reactivated by a 400 C, 5 minute anneal with no detectable activation of deep levels. One to five analysis indicated a subsequent approximately 100 fold decrease in reverse leakage current at -1 volt reverse bias, and an improved built in voltage for the p(+)-n structures. In addition to being passivated, dislocations are also shown to participate in secondary interactions during hydrogenation. We find that the presence of dislocations enhances hydrogen diffusion into the cell structure, and lowers the apparent dissociation energy of Zn-H complexes from 1.19 eV for homoepitaxial Zn-doped InP to 1.12 eV for heteroepitaxial Zn-doped InP. This is explained by additional hydrogen trapping at dislocations subsequent to the reactivation of Zn dopants after hydrogenation.

Hydrogen Passivation of N(+)P and P(+)N Heteroepitaxial InP Solar Cell Structures

NASA Technical Reports Server (NTRS)

Chatterjee, B.; Davis, W. C.; Ringel, S. A.; Hoffman, R., Jr.

1995-01-01

Dislocations and related point defect complexes caused by lattice mismatch currently limit the performance of heteroepitaxial InP cells by introducing shunting paths across the active junction and by the formation of deep traps within the base region. We have previously demonstrated that plasma hydrogenation is an effective and stable means to passivate the electrical activity of such defects in specially designed heteroepitaxial InP test structures to probe hydrogen passivation at typical base depths within a cell structure. In this work, we present our results on the hydrogen passivation of actual heteroepitaxial n(+)p and p(+)n InP cell structures grown on GaAs substrates by metalorganic chemical vapor deposition (MOCVD). We have found that a 2 hour exposure to a 13.56 MHz hydrogen plasma at 275 C reduces the deep level concentration in the base regions of both n(+)p and p(+)n heteroepitaxial InP cell structures from as-grown values of 5 - 7 x 10(exp 14)/cc, down to 3 - 5 x 10(exp 12)/cc. All dopants were successfully reactivated by a 400 C, 5 minute anneal With no detectable activation of deep levels. I-V analysis indicated a subsequent approx. 100 fold decrease In reverse leakage current at -1 volt reverse bias, and an improved built in voltage for the p(+)n structures. ln addition to being passivated,dislocations are also shown to participate in secondary interactions during hydrogenation. We find that the presence of dislocations enhances hydrogen diffusion into the cell structure, and lowers the apparent dissociation energy of Zn-H complexes from 1.19 eV for homoepitaxial Zn-doped InP to 1.12 eV for heteroepitaxial Zn-doped InP. This is explained by additional hydrogen trapping at dislocations subsequent to the reactivation of Zn dopants after hydrogenation.

Indium Phosphide Window Layers for Indium Gallium Arsenide Solar Cells

NASA Technical Reports Server (NTRS)

Jain, Raj K.

2005-01-01

Window layers help in reducing the surface recombination at the emitter surface of the solar cells resulting in significant improvement in energy conversion efficiency. Indium gallium arsenide (In(x)Ga(1-x)As) and related materials based solar cells are quite promising for photovoltaic and thermophotovoltaic applications. The flexibility of the change in the bandgap energy and the growth of InGaAs on different substrates make this material very attractive for multi-bandgap energy, multi-junction solar cell approaches. The high efficiency and better radiation performance of the solar cell structures based on InGaAs make them suitable for space power applications. This work investigates the suitability of indium phosphide (InP) window layers for lattice-matched In(0.53)Ga(0.47)As (bandgap energy 0.74 eV) solar cells. We present the first data on the effects of the p-type InP window layer on p-on-n lattice-matched InGaAs solar cells. The modeled quantum efficiency results show a significant improvement in the blue region with the InP window. The bare InGaAs solar cell performance suffers due to high surface recombination velocity (10(exp 7) cm/s). The large band discontinuity at the InP/InGaAs heterojunction offers a great potential barrier to minority carriers. The calculated results demonstrate that the InP window layer effectively passivates the solar cell front surface, hence resulting in reduced surface recombination and therefore, significantly improving the performance of the InGaAs solar cell.

InP tunnel junction for InGaAs/InP tandem solar cells

NASA Technical Reports Server (NTRS)

Vilela, M. F.; Freundlich, A.; Bensaoula, A.; Medelci, N.; Renaud, P.

1995-01-01

Chemical beam epitaxy (CBE) has been shown to allow the growth of high quality materials with reproducible complex compositional and doping profiles. The main advantage of CBE compared to metalorganic chemical vapor deposition (MOCVD), the most popular technique for InP-based photovoltaic device fabrication, is the ability to grow high purity epilayers at much lower temperatures (450-530 C). We have previously shown that CBE is perfectly suited toward the fabrication of complex photovoltaic devices such as InP/InGaAs monolithically integrated tandem solar cells, because its low process temperature preserves the electrical characteristics of the InGaAs tunnel junction commonly used as an ohmic interconnect. In this work using CBE for the fabrication of optically transparent (with respect to the bottom cell) InP tunnel diodes is demonstrated. Epitaxial growth were performed in a Riber CBE 32 system using PH3 and TMIn as III and V precursors. Solid Be (p-type) and Si (n-type) have been used as doping sources, allowing doping levels up to 2 x 10(exp -19)/cu cm and 1 x 10(exp -19)/cu cm for n and p type respectively. The InP tunnel junction characteristics and the influence of the growth's conditions (temperature, growth rate) over its performance have been carefully investigated. InP p(++)/n(++) tunnel junction with peak current densities up to 1600 A/sq cm and maximum specific resistivities (V(sub p)/I(sub p) - peak voltage to peak current ratio) in the range of 10(exp -4) Omega-sq cm were obtained. The obtained peak current densities exceed the highest results previously reported for their lattice matched counterparts, In(0.53)Ga( 0.47)As and should allow the realization of improved minimal absorption losses in the interconnect InP/InGaAs tandem devices for Space applications. Owing to the low process temperature required for the top cell, these devices exhibit almost no degradation of its characteristics after the growth of subsequent thick InP layer suggesting minimal doping cross diffusion in the narrow space-charge region (approximately 1-5 nm) of the device. The fabrication of tandem devices using InP tunnel diodes as interconnect is in progress and will be reported at the conference.

High quality InP-on-Si for solar cell applications

NASA Technical Reports Server (NTRS)

Shellenbarger, Zane A.; Goodwin, Thomas A.; Collins, Sandra R.; Dinetta, Louis C.

1994-01-01

InP on Si solar cells combine the low-cost and high-strength of Si with the high efficiency and radiation tolerance of InP. The main obstacle in the growth of single crystal InP-on-Si is the high residual strain and high dislocation density of the heteroepitaxial InP films. The dislocations result from the large differences in lattice constant and thermal expansion mismatch of InP and Si. Adjusting the size and geometry of the growth area is one possible method of addressing this problem. In this work, we conducted a material quality study of liquid phase epitaxy overgrowth layers on selective area InP grown by a proprietary vapor phase epitaxy technique on Si. The relationship between growth area and dislocation density was quantified using etch pit density measurements. Material quality of the InP on Si improved both with reduced growth area and increased aspect ratio (length/width) of the selective area. Areas with etch pit density as low as 1.6 x 10(exp 4) sq cm were obtained. Assuming dislocation density is an order of magnitude greater than etch pit density, solar cells made with this material could achieve the maximum theoretical efficiency of 23% at AMO. Etch pit density dependence on the orientation of the selective areas on the substrate was also studied.

InP materials/cell fabrication

NASA Technical Reports Server (NTRS)

Coutts, T. J.

1987-01-01

The main points of discussion, conclusions and recommendations of a workshop on InP materials and cell fabrication are given. The importance of assessing the quality of p-Inp crystals supplied by different vendors, back contacts to solar cells, junction formation, energy conversion efficiency, testing for radiation resistance, and future develpments were among the topics discussed.

VLS growth of alternating InAsP/InP heterostructure nanowires for multiple-quantum-dot structures.

PubMed

Tateno, Kouta; Zhang, Guoqiang; Gotoh, Hideki; Sogawa, Tetsuomi

2012-06-13

We investigated the Au-assisted growth of alternating InAsP/InP heterostructures in wurtzite InP nanowires on InP(111)B substrates for constructing multiple-quantum-dot structures. Vertical InP nanowires without stacking faults were obtained at a high PH(3)/TMIn mole flow ratio of 300-1000. We found that the growth rate changed largely when approximately 40 min passed. Ten InAsP layers were inserted in the InP nanowire, and it was found that both the InP growth rate and the background As level increased after the As supply. We also grew the same structure using TBAs/TBP and could reduce the As level in the InP segments. A simulation using a finite-difference time-domain method suggests that the nanowire growth was dominated by the diffusion of the reaction species with long residence time on the surface. For TBAs/TBP, when the source gases were changed, the formed surface species showed a short diffusion length so as to reduce the As background after the InAsP growth.

19.2% Efficient InP Heterojunction Solar Cell with Electron-Selective TiO 2 Contact

DOE PAGES

Yin, Xingtian; Battaglia, Corsin; Lin, Yongjing; ...

2014-09-25

We demonstrate an InP heterojunction solar cell employing an ultrathin layer (~10 nm) of amorphous TiO 2 deposited at 120°C by atomic layer deposition as the transparent electron-selective contact. The TiO 2 film selectively extracts minority electrons from the conduction band of p-type InP while blocking the majority holes due to the large valence band offset, enabling a high maximum open-circuit voltage of 785 mV. Lastly, a hydrogen plasma treatment of the InP surface drastically improves the long-wavelength response of the device, resulting in a high short-circuit current density of 30.5 mA/cm 2 and a high power conversion efficiency ofmore » 19.2%.« less

Understanding InP Nanowire Array Solar Cell Performance by Nanoprobe-Enabled Single Nanowire Measurements.

PubMed

Otnes, Gaute; Barrigón, Enrique; Sundvall, Christian; Svensson, K Erik; Heurlin, Magnus; Siefer, Gerald; Samuelson, Lars; Åberg, Ingvar; Borgström, Magnus T

2018-05-09

III-V solar cells in the nanowire geometry might hold significant synthesis-cost and device-design advantages as compared to thin films and have shown impressive performance improvements in recent years. To continue this development there is a need for characterization techniques giving quick and reliable feedback for growth development. Further, characterization techniques which can improve understanding of the link between nanowire growth conditions, subsequent processing, and solar cell performance are desired. Here, we present the use of a nanoprobe system inside a scanning electron microscope to efficiently contact single nanowires and characterize them in terms of key parameters for solar cell performance. Specifically, we study single as-grown InP nanowires and use electron beam induced current characterization to understand the charge carrier collection properties, and dark current-voltage characteristics to understand the diode recombination characteristics. By correlating the single nanowire measurements to performance of fully processed nanowire array solar cells, we identify how the performance limiting parameters are related to growth and/or processing conditions. We use this understanding to achieve a more than 7-fold improvement in efficiency of our InP nanowire solar cells, grown from a different seed particle pattern than previously reported from our group. The best cell shows a certified efficiency of 15.0%; the highest reported value for a bottom-up synthesized InP nanowire solar cell. We believe the presented approach have significant potential to speed-up the development of nanowire solar cells, as well as other nanowire-based electronic/optoelectronic devices.

Potential for use of indium phosphide solar cells in the space radiation environment

NASA Technical Reports Server (NTRS)

Weinberg, I.; Swartz, C. K.; Hart, R. E., Jr.

1985-01-01

Indium phosphide solar cells were observed to have significantly higher radiation resistance than either GaAs or Si after exposure to 10 MeV proton irradiation data and previous 1 MeV electron data together with projected efficiencies for InP, it was found that these latter cells produced more output power than either GaAs or Si after specified fluences of 10 MeV protons and 1 MeV electrons. Estimates of expected performance in a proton dominated space orbit yielded much less degradation for InP when compared to the remaining two cell types. It was concluded that, with additional development to increase efficiency, InP solar cells would perform significantly better than either GaAs or Si in the space radiation environment.

Correlation of electron and proton irradiation-induced damage in InP solar cells

NASA Technical Reports Server (NTRS)

Walters, Robert J.; Summers, Geoffrey P.; Messenger, Scott R.; Burke, Edward A.

1996-01-01

The measured degradation of epitaxial shallow homojunction n(+)/p InP solar cells under 1 MeV electron irradiation is correlated with that measured under 3 MeV proton irradiation based on 'displacement damage dose'. The measured data is analyzed as a function of displacement damage dose from which an electron to proton dose equivalency ratio is determined which enables the electron and proton degradation data to be described by a single degradation curve. It is discussed how this single curve can be used to predict the cell degradation under irradiation by any particle energy. The degradation curve is used to compare the radiation response of InP and GaAs/Ge cells on an absolute damage energy scale. The comparison shows InP to be inherently more resistant to displacement damage deposition than the GaAs/Ge.

High Beginning-of-Life Efficiency p/n InP Solar Cells

NASA Technical Reports Server (NTRS)

Hoffman, Richard W., Jr.; Fatemi, Navid S.; Weizer, Victor G.; Jenkins, Phillip P.; Ringel, Steven A.; Scheiman, David A.; Wilt, David M.; Brinker, David J.

2004-01-01

We have achieved a new record efficiency of 17.6%, (AM0) for a p/n InP homo-epitaxy solar cell. In addition, we have eliminated a previously observed photo-degradation of cell performance, which was due to losses in J(sub sc). Cells soaked in AM0 spectrum at one-sun intensity for an hour showed no significant change in cell performance. We have discovered carrier passivation effects when using Zn as the p-type dopant in the OMVPE growth of InP and have found a method to avoid the unexpected effects which result from typical operation of OMVPE cell growth.

Engineering MoSx/Ti/InP Hybrid Photocathode for Improved Solar Hydrogen Production

NASA Astrophysics Data System (ADS)

Li, Qiang; Zheng, Maojun; Zhong, Miao; Ma, Liguo; Wang, Faze; Ma, Li; Shen, Wenzhong

2016-07-01

Due to its direct band gap of ~1.35 eV, appropriate energy band-edge positions, and low surface-recombination velocity, p-type InP has attracted considerable attention as a promising photocathode material for solar hydrogen generation. However, challenges remain with p-type InP for achieving high and stable photoelectrochemical (PEC) performances. Here, we demonstrate that surface modifications of InP photocathodes with Ti thin layers and amorphous MoSx nanoparticles can remarkably improve their PEC performances. A high photocurrent density with an improved PEC onset potential is obtained. Electrochemical impedance analyses reveal that the largely improved PEC performance of MoSx/Ti/InP is attributed to the reduced charge-transfer resistance and the increased band bending at the MoSx/Ti/InP/electrolyte interface. In addition, the MoSx/Ti/InP photocathodes function stably for PEC water reduction under continuous light illumination over 2 h. Our study demonstrates an effective approach to develop high-PEC-performance InP photocathodes towards stable solar hydrogen production.

Engineering MoSx/Ti/InP Hybrid Photocathode for Improved Solar Hydrogen Production

PubMed Central

Li, Qiang; Zheng, Maojun; Zhong, Miao; Ma, Liguo; Wang, Faze; Ma, Li; Shen, Wenzhong

2016-01-01

Due to its direct band gap of ~1.35 eV, appropriate energy band-edge positions, and low surface-recombination velocity, p-type InP has attracted considerable attention as a promising photocathode material for solar hydrogen generation. However, challenges remain with p-type InP for achieving high and stable photoelectrochemical (PEC) performances. Here, we demonstrate that surface modifications of InP photocathodes with Ti thin layers and amorphous MoSx nanoparticles can remarkably improve their PEC performances. A high photocurrent density with an improved PEC onset potential is obtained. Electrochemical impedance analyses reveal that the largely improved PEC performance of MoSx/Ti/InP is attributed to the reduced charge-transfer resistance and the increased band bending at the MoSx/Ti/InP/electrolyte interface. In addition, the MoSx/Ti/InP photocathodes function stably for PEC water reduction under continuous light illumination over 2 h. Our study demonstrates an effective approach to develop high-PEC-performance InP photocathodes towards stable solar hydrogen production. PMID:27431993

Engineering MoSx/Ti/InP Hybrid Photocathode for Improved Solar Hydrogen Production.

PubMed

Li, Qiang; Zheng, Maojun; Zhong, Miao; Ma, Liguo; Wang, Faze; Ma, Li; Shen, Wenzhong

2016-07-19

Due to its direct band gap of ~1.35 eV, appropriate energy band-edge positions, and low surface-recombination velocity, p-type InP has attracted considerable attention as a promising photocathode material for solar hydrogen generation. However, challenges remain with p-type InP for achieving high and stable photoelectrochemical (PEC) performances. Here, we demonstrate that surface modifications of InP photocathodes with Ti thin layers and amorphous MoSx nanoparticles can remarkably improve their PEC performances. A high photocurrent density with an improved PEC onset potential is obtained. Electrochemical impedance analyses reveal that the largely improved PEC performance of MoSx/Ti/InP is attributed to the reduced charge-transfer resistance and the increased band bending at the MoSx/Ti/InP/electrolyte interface. In addition, the MoSx/Ti/InP photocathodes function stably for PEC water reduction under continuous light illumination over 2 h. Our study demonstrates an effective approach to develop high-PEC-performance InP photocathodes towards stable solar hydrogen production.

Surface passivation of InP solar cells with InAlAs layers

NASA Technical Reports Server (NTRS)

Jain, Raj K.; Flood, Dennis J.; Landis, Geoffrey A.

1993-01-01

The efficiency of indium phosphide solar cells is limited by high values of surface recombination. The effect of a lattice-matched In(0.52)Al(0.48)As window layer material for InP solar cells, using the numerical code PC-1D is investigated. It was found that the use of InAlAs layer significantly enhances the p(+)n cell efficiency, while no appreciable improvement is seen for n(+)p cells. The conduction band energy discontinuity at the heterojunction helps in improving the surface recombination. An optimally designed InP cell efficiency improves from 15.4 percent to 23 percent AMO for a 10 nm thick InAlAs layer. The efficiency improvement reduces with increase in InAlAs layer thickness, due to light absorption in the window layer.

Effects of nitrogen incorporation in HfO(2) grown on InP by atomic layer deposition: an evolution in structural, chemical, and electrical characteristics.

PubMed

Kang, Yu-Seon; Kim, Dae-Kyoung; Kang, Hang-Kyu; Jeong, Kwang-Sik; Cho, Mann-Ho; Ko, Dae-Hong; Kim, Hyoungsub; Seo, Jung-Hye; Kim, Dong-Chan

2014-03-26

We investigated the effects of postnitridation on the structural characteristics and interfacial reactions of HfO2 thin films grown on InP by atomic layer deposition (ALD) as a function of film thickness. By postdeposition annealing under NH3 vapor (PDN) at 600 °C, an InN layer formed at the HfO2/InP interface, and ionized NHx was incorporated in the HfO2 film. We demonstrate that structural changes resulting from nitridation of HfO2/InP depend on the film thickness (i.e., a single-crystal interfacial layer of h-InN formed at thin (2 nm) HfO2/InP interfaces, whereas an amorphous InN layer formed at thick (>6 nm) HfO2/InP interfaces). Consequently, the tetragonal structure of HfO2 transformed into a mixture structure of tetragonal and monoclinic because the interfacial InN layer relieved interfacial strain between HfO2 and InP. During postdeposition annealing (PDA) in HfO2/InP at 600 °C, large numbers of oxidation states were generated as a result of interfacial reactions between interdiffused oxygen impurities and out-diffused InP substrate elements. However, in the case of the PDN of HfO2/InP structures at 600 °C, nitrogen incorporation in the HfO2 film effectively blocked the out-diffusion of atomic In and P, thus suppressing the formation of oxidation states. Accordingly, the number of interfacial defect states (Dit) within the band gap of InP was significantly reduced, which was also supported by DFT calculations. Interfacial InN in HfO2/InP increased the electron-barrier height to ∼0.6 eV, which led to low-leakage-current density in the gate voltage region over 2 V.

Diffusion length measurements in bulk and epitaxially grown 3-5 semiconductors using charge collection microscopy

NASA Technical Reports Server (NTRS)

Leon, R. P.

1987-01-01

Diffusion lengths and surface recombination velocities were measured in GaAs diodes and InP finished solar cells. The basic techniques used was charge collection microscopy also known as electron beam induced current (EBIC). The normalized currents and distances from the pn junction were read directly from the calibrated curves obtained while using the line scan mode in an SEM. These values were then equated to integral and infinite series expressions resulting from the solution of the diffusion equation with both extended generation and point generation functions. This expands previous work by examining both thin and thick samples. The surface recombination velocity was either treated as an unknown in a system of two equations, or measured directly using low e(-) beam accelerating voltages. These techniques give accurate results by accounting for the effects of surface recombination and the finite size of the generation volume.

An Efficient and Effective Design of InP Nanowires for Maximal Solar Energy Harvesting.

PubMed

Wu, Dan; Tang, Xiaohong; Wang, Kai; He, Zhubing; Li, Xianqiang

2017-11-25

Solar cells based on subwavelength-dimensions semiconductor nanowire (NW) arrays promise a comparable or better performance than their planar counterparts by taking the advantages of strong light coupling and light trapping. In this paper, we present an accurate and time-saving analytical design for optimal geometrical parameters of vertically aligned InP NWs for maximal solar energy absorption. Short-circuit current densities are calculated for each NW array with different geometrical dimensions under solar illumination. Optimal geometrical dimensions are quantitatively presented for single, double, and multiple diameters of the NW arrays arranged both squarely and hexagonal achieving the maximal short-circuit current density of 33.13 mA/cm 2 . At the same time, intensive finite-difference time-domain numerical simulations are performed to investigate the same NW arrays for the highest light absorption. Compared with time-consuming simulations and experimental results, the predicted maximal short-circuit current densities have tolerances of below 2.2% for all cases. These results unambiguously demonstrate that this analytical method provides a fast and accurate route to guide high performance InP NW-based solar cell design.

An Efficient and Effective Design of InP Nanowires for Maximal Solar Energy Harvesting

NASA Astrophysics Data System (ADS)

Wu, Dan; Tang, Xiaohong; Wang, Kai; He, Zhubing; Li, Xianqiang

2017-11-01

Solar cells based on subwavelength-dimensions semiconductor nanowire (NW) arrays promise a comparable or better performance than their planar counterparts by taking the advantages of strong light coupling and light trapping. In this paper, we present an accurate and time-saving analytical design for optimal geometrical parameters of vertically aligned InP NWs for maximal solar energy absorption. Short-circuit current densities are calculated for each NW array with different geometrical dimensions under solar illumination. Optimal geometrical dimensions are quantitatively presented for single, double, and multiple diameters of the NW arrays arranged both squarely and hexagonal achieving the maximal short-circuit current density of 33.13 mA/cm2. At the same time, intensive finite-difference time-domain numerical simulations are performed to investigate the same NW arrays for the highest light absorption. Compared with time-consuming simulations and experimental results, the predicted maximal short-circuit current densities have tolerances of below 2.2% for all cases. These results unambiguously demonstrate that this analytical method provides a fast and accurate route to guide high performance InP NW-based solar cell design.

Radiation effects in heteroepitaxial InP solar cells

NASA Technical Reports Server (NTRS)

Weinberg, I.; Curtis, H. B.; Swartz, C. K.; Brinker, D. J.; Vargas-Aburto, C.

1993-01-01

Heteroepitaxial InP solar cells, with GaAs substrates, were irradiated by 0.5 and 3 MeV protons and their performance, temperature dependency, and carrier removal rates determined as a function of fluence. The radiation resistance of the present cells was significantly greater than that of non-heteroepitaxial InP cells at both proton energies. A clear difference in the temperature dependency of V(sub oc), was observed between heteroepitaxial and homoepitaxial InP cells. The analytically predicted dependence of dV(sub oc)/dT on Voc was confirmed by the fluence dependence of these quantities. Carrier removal was observed to increase with decreasing proton energy. The results obtained for performance and temperature dependency were attributed to the high dislocation densities present in the heteroepitaxial cells while the energy dependence of carrier removal was attributed to the energy dependence of proton range.

Post deposition annealing effect on the properties of Al2O3/InP interface

NASA Astrophysics Data System (ADS)

Kim, Hogyoung; Kim, Dong Ha; Choi, Byung Joon

2018-02-01

Post deposition in-situ annealing effect on the interfacial and electrical properties of Au/Al2O3/n-InP junctions were investigated. With increasing the annealing time, both the barrier height and ideality factor changed slightly but the series resistance decreased significantly. Photoluminescence (PL) measurements showed that the intensities of both the near band edge (NBE) emission from InP and defect-related bands (DBs) from Al2O3 decreased with 30 min annealing. With increasing the annealing time, the diffusion of oxygen (indium) atoms into Al2O3/InP interface (into Al2O3 layer) occurred more significantly, giving rise to the increase of the interface state density. Therefore, the out-diffusion of oxygen atoms from Al2O3 during the annealing process should be controlled carefully to optimize the Al2O3/InP based devices.

Tunable absorption resonances in the ultraviolet for InP nanowire arrays.

PubMed

Aghaeipour, Mahtab; Anttu, Nicklas; Nylund, Gustav; Samuelson, Lars; Lehmann, Sebastian; Pistol, Mats-Erik

2014-11-17

The ability to tune the photon absorptance spectrum is an attracting way of tailoring the response of devices like photodetectors and solar cells. Here, we measure the reflectance spectra of InP substrates patterned with arrays of vertically standing InP nanowires. Using the reflectance spectra, we calculate and analyze the corresponding absorptance spectra of the nanowires. We show that we can tune absorption resonances for the nanowire arrays into the ultraviolet by decreasing the diameter of the nanowires. When we compare our measurements with electromagnetic modeling, we generally find good agreement. Interestingly, the remaining differences between modeled and measured spectra are attributed to a crystal-phase dependence in the refractive index of InP. Specifically, we find indication of significant differences in the refractive index between the modeled zinc-blende InP nanowires and the measured wurtzite InP nanowires in the ultraviolet. We believe that such crystal-phase dependent differences in the refractive index affect the possibility to excite optical resonances in the large wavelength range of 345 < λ < 390 nm. To support this claim, we investigated how resonances in nanostructures can be shifted in wavelength by geometrical tuning. We find that dispersion in the refractive index can dominate over geometrical tuning and stop the possibility for such shifting. Our results open the door for using crystal-phase engineering to optimize the absorption in InP nanowire-based solar cells and photodetectors.

Minority carrier diffusion length and edge surface-recombination velocity in InP

NASA Technical Reports Server (NTRS)

Hakimzadeh, Roshanak; Bailey, Sheila G.

1993-01-01

A scanning electron microscope was used to obtain the electron-beam-induced current (EBIC) profiles in InP specimens containing a Schottky barrier perpendicular to the scanned (edge) surface. An independent technique was used to measure the edge surface-recombination velocity. These values were used in a fit of the experimental EBIC data with a theoretical expression for normalized EBIC (Donolato, 1982) to obtain the electron (minority carrier) diffusion length.

Formation of vacancy-impurity complexes in heavily Zn-doped InP

NASA Astrophysics Data System (ADS)

Slotte, J.; Saarinen, K.; Salmi, A.; Simula, S.; Aavikko, R.; Hautojärvi, P.

2003-03-01

Positron annihilation spectroscopy has been applied to observe the spontaneous formation of vacancy-type defects by annealing of heavily Zn-doped InP at 500 700 K. The defect is identified as the VP-Zn pair by detecting the annihilation of positrons with core electrons. We conclude that the defect is formed through a diffusion process; a phosphorus vacancy migrates until trapped by a Zn impurity and forms a negatively charged VP-Zn pair. The kinetics of the diffusion process is investigated by measuring the average positron lifetime as a function of annealing time and by fitting a diffusion model to the experimental results. We deduce a migration energy of 1.8±0.2 eV for the phosphorus vacancy. Our results explain both the presence of native VP-Zn pairs in Zn-doped InP and their disappearance in post-growth annealings.

Non-destructive, ultra-low resistance, thermally stable contacts for use on shallow junction InP solar cells

NASA Technical Reports Server (NTRS)

Weizer, V. G.; Fatemi, N. S.; Korenyi-Both, A. L.

1993-01-01

Contact formation to InP is plagued by violent metal-semiconductor intermixing that takes place during the contact sintering process. Because of this the InP solar cell cannot be sintered after contact deposition. This results in cell contact resistances that are orders of magnitude higher than those that could be achieved if sintering could be performed in a non-destructive manner. We report here on a truly unique contact system involving Au and Ge, which is easily fabricated, which exhibits extremely low values of contact resistivity, and in which there is virtually no metal-semiconductor interdiffusion, even after extended sintering. We present a description of this contact system and suggest possible mechanisms to explain the observed behavior.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Menezes, S.; Bachmann, K.J.; Bedair, S.

Recently, the authors reported on electrodissolution and passivation phenomena on single crystal electrodes of the III-V compounds InP, InAs, InSb, GaP, GaAs, and GaSb in aqueous electrolytes. Considerable differences in the behavior are observed that are particularly pronounced in acid solutions. InAs and InP represent extreme cases: InAs does not passivate at pH about 0 except at very high current density (c.d.), but the films formed at high c.d. are too porous to prevent excessive surface corrosion. InP exhibits severe inhibition to anodic dissolution even in 4M HCl solution by the formation of a coherent film that can be removedmore » only by extensive cathodic reduction. Also, they reported previously on p-InP/V/sup 2 +/-V/sup 3 +/, 4M HCl/C solar cells that represent efficient EIS junctions (3). The function of this device is thus intimately linked to the passivation behavior of p-InP (1). A similar condition has been observed for p-InP-indium-tin oxide (ITO) solar cells that represent efficient SIS junctions (4) where the dielectric is a phosphorus oxide film of tunneling thickness. Investigations in InP /SUB y/ As/sub 1/- /SUB y/ /ITO solar cells show that the dielectric becomes porous at ygreater than or equal to 0.85. At higher P concentration, the solar power conversion efficiency peaks presumably because of a reduction in the dielectric film thickness, but at lower P concentrations, the solar cell characteristic degrades steeply. In this paper, the passivation and electrodissolution behavior of alloys at the InAs-InP pseudobinary that show complete solid solubility over the entire range of compositions InP /SUB y/ As/sub 1/- /SUB y/ , 0 less than or equal to y less than or equal to 1 is reported.« less

Optimized efficiency in InP nanowire solar cells with accurate 1D analysis

NASA Astrophysics Data System (ADS)

Chen, Yang; Kivisaari, Pyry; Pistol, Mats-Erik; Anttu, Nicklas

2018-01-01

Semiconductor nanowire arrays are a promising candidate for next generation solar cells due to enhanced absorption and reduced material consumption. However, to optimize their performance, time consuming three-dimensional (3D) opto-electronics modeling is usually performed. Here, we develop an accurate one-dimensional (1D) modeling method for the analysis. The 1D modeling is about 400 times faster than 3D modeling and allows direct application of concepts from planar pn-junctions on the analysis of nanowire solar cells. We show that the superposition principle can break down in InP nanowires due to strong surface recombination in the depletion region, giving rise to an IV-behavior similar to that with low shunt resistance. Importantly, we find that the open-circuit voltage of nanowire solar cells is typically limited by contact leakage. Therefore, to increase the efficiency, we have investigated the effect of high-bandgap GaP carrier-selective contact segments at the top and bottom of the InP nanowire and we find that GaP contact segments improve the solar cell efficiency. Next, we discuss the merit of p-i-n and p-n junction concepts in nanowire solar cells. With GaP carrier selective top and bottom contact segments in the InP nanowire array, we find that a p-n junction design is superior to a p-i-n junction design. We predict a best efficiency of 25% for a surface recombination velocity of 4500 cm s-1, corresponding to a non-radiative lifetime of 1 ns in p-n junction cells. The developed 1D model can be used for general modeling of axial p-n and p-i-n junctions in semiconductor nanowires. This includes also LED applications and we expect faster progress in device modeling using our method.

Optimized efficiency in InP nanowire solar cells with accurate 1D analysis.

PubMed

Chen, Yang; Kivisaari, Pyry; Pistol, Mats-Erik; Anttu, Nicklas

2018-01-26

Semiconductor nanowire arrays are a promising candidate for next generation solar cells due to enhanced absorption and reduced material consumption. However, to optimize their performance, time consuming three-dimensional (3D) opto-electronics modeling is usually performed. Here, we develop an accurate one-dimensional (1D) modeling method for the analysis. The 1D modeling is about 400 times faster than 3D modeling and allows direct application of concepts from planar pn-junctions on the analysis of nanowire solar cells. We show that the superposition principle can break down in InP nanowires due to strong surface recombination in the depletion region, giving rise to an IV-behavior similar to that with low shunt resistance. Importantly, we find that the open-circuit voltage of nanowire solar cells is typically limited by contact leakage. Therefore, to increase the efficiency, we have investigated the effect of high-bandgap GaP carrier-selective contact segments at the top and bottom of the InP nanowire and we find that GaP contact segments improve the solar cell efficiency. Next, we discuss the merit of p-i-n and p-n junction concepts in nanowire solar cells. With GaP carrier selective top and bottom contact segments in the InP nanowire array, we find that a p-n junction design is superior to a p-i-n junction design. We predict a best efficiency of 25% for a surface recombination velocity of 4500 cm s -1 , corresponding to a non-radiative lifetime of 1 ns in p-n junction cells. The developed 1D model can be used for general modeling of axial p-n and p-i-n junctions in semiconductor nanowires. This includes also LED applications and we expect faster progress in device modeling using our method.

Voc Degradation in TF-VLS Grown InP Solar Cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sun, Yubo; Sun, Xingshu; Johnston, Steve

2016-11-21

Here we consider two hypotheses to explain the open-circuit voltage (VOC) degradation observed in thin-film vapor-liquid-solid (TF-VLS) grown p-type InP photovoltaic cells: bandgap narrowing and local shunting. First, a bandgap (Eg) narrowing effect is hypothesized, based on the surface inhomogeneity of VLS InP captured by the photoluminescence (PL) image. The PL data was used to estimate a spatially-resolved active VOC across surface of the InP sample. Combining this data with the effective Jsc allowed an assessment of the I-V characteristics of individual unit cells. Next, an H-SPICE diode compact model was utilized to reproduce the I-V characteristics of the wholemore » sample. We find a good fit to the I-V performance of TF-VLS grown InP solar cell. Second, a local shunting effect was also considered as an alternative explanation of the VOC degradation effect. Again, PL image data was used, and small local shunt resistance was added in arbitrary elementary unit cells to represent certain dark spots seen in the PL image and dictate the VOC degradation occurred in the sample.« less

Impact of bacterial ice nucleating particles on weather predicted by a numerical weather prediction model

NASA Astrophysics Data System (ADS)

Sahyoun, Maher; Korsholm, Ulrik S.; Sørensen, Jens H.; Šantl-Temkiv, Tina; Finster, Kai; Gosewinkel, Ulrich; Nielsen, Niels W.

2017-12-01

Bacterial ice-nucleating particles (INP) have the ability to facilitate ice nucleation from super-cooled cloud droplets at temperatures just below the melting point. Bacterial INP have been detected in cloud water, precipitation, and dry air, hence they may have an impact on weather and climate. In modeling studies, the potential impact of bacteria on ice nucleation and precipitation formation on global scale is still uncertain due to their small concentration compared to other types of INP, i.e. dust. Those earlier studies did not account for the yet undetected high concentration of nanoscale fragments of bacterial INP, which may be found free or attached to soil dust in the atmosphere. In this study, we investigate the sensitivity of modeled cloud ice, precipitation and global solar radiation in different weather scenarios to changes in the fraction of cloud droplets containing bacterial INP, regardless of their size. For this purpose, a module that calculates the probability of ice nucleation as a function of ice nucleation rate and bacterial INP fraction was developed and implemented in a numerical weather prediction model. The threshold value for the fraction of cloud droplets containing bacterial INP needed to produce a 1% increase in cloud ice was determined at 10-5 to 10-4. We also found that increasing this fraction causes a perturbation in the forecast, leading to significant differences in cloud ice and smaller differences in convective and total precipitation and in net solar radiation reaching the surface. These effects were most pronounced in local convective events. Our results show that bacterial INP can be considered as a trigger factor for precipitation, but not an enhancement factor.

Ice nucleating particles measured during the laboratory and field intercomparisons FIN-2 and FIN-3 by the diffusion chamber FRIDGE

NASA Astrophysics Data System (ADS)

Weber, Daniel; Schrod, Jann; Curtius, Joachim; Haunold, Werner; Thomson, Erik; Bingemer, Heinz

2016-04-01

The measurement of atmospheric ice nucleating particles (INP) is still challenging. In the absence of easily applicable INP standards the intercomparison of different methods during collaborative laboratory and field workshops is a valuable tool that can shine light on the performance of individual methods for the measurement of INP [1]. FIN-2 was conducted in March 2015 at the AIDA facility in Karlsruhe as an intercomparison of mobile instruments for measuring INP [2]. FIN-3 was a field campaign at the Desert Research Institutes Storm Peak Laboratory in Colorado in September 2015 [3]. The FRankfurt Ice nucleation Deposition freezinG Experiment (FRIDGE) participated in both experiments. FRIDGE measures ice nucleating particles by electrostatic precipitation of aerosol particles onto Si-wafers in a collection unit, followed by activation, growth, and optical detection of ice crystals on the substrate in an isostatic diffusion chamber [4,5]. We will present and discuss results of our measurements of deposition/condensation INP and of immersion INP with FRIDGE during FIN-2 and FIN-3. Acknowledgements: The valuable contributions of the FIN organizers and their institutions, and of the FIN Workshop Science team are gratefully acknowledged. Our work was supported by Deutsche Forschungsgemeinschaft (DFG) under the Research Unit FOR 1525 (INUIT) and the EU FP7-ENV- 2013 BACCHUS project under Grant Agreement 603445.

Solar cells based on InP/GaP/Si structure

NASA Astrophysics Data System (ADS)

Kvitsiani, O.; Laperashvil, D.; Laperashvili, T.; Mikelashvili, V.

2016-10-01

Solar cells (SCs) based on III-V semiconductors are reviewed. Presented work emphases on the Solar Cells containing Quantum Dots (QDs) for next-generation photovoltaics. In this work the method of fabrication of InP QDs on III-V semiconductors is investigated. The original method of electrochemical deposition of metals: indium (In), gallium (Ga) and of alloys (InGa) on the surface of gallium phosphide (GaP), and mechanism of formation of InP QDs on GaP surface is presented. The possibilities of application of InP/GaP/Si structure as SC are discussed, and the challenges arising is also considered.

Effect of dislocations on properties of heteroepitaxial InP solar cells

NASA Technical Reports Server (NTRS)

Weinberg, I.; Swartz, C. K.; Curtis, H. B.; Brinker, D. J.; Jenkins, P.; Faur, M.

1991-01-01

The apparently unrelated phenomena of temperature dependency, carrier removal and photoluminescence are shown to be affected by the high dislocation densities present in heteroepitaxial InP solar cells. Using homoepitaxial InP cells as a baseline, it is found that the relatively high dislocation densities present in heteroepitaxial InP/GaAs cells lead to increased volumes of dVoc/dt and carrier removal rate and substantial decreases in photoluminescence spectral intensities. With respect to dVoc/dt, the observed effect is attributed to the tendency of dislocations to reduce Voc. Although the basic cause for the observed increase in carrier removal rate is unclear, it is speculated that the decreased photoluminescence intensity is attributable to defect levels introduced by dislocations in the heteroepitaxial cells.

Open-tube diffusion techniques for InP/LnGaAs heterojunctior bipolar transistors

NASA Astrophysics Data System (ADS)

Schuitemaker, P.; Houston, P. A.

1986-11-01

Open-tube diffusion techniques used between 450 and 600° C are described which involve the supply of diffusant from a vapour source (via a solution) and a solid evaporated metal source. Investigations of Zn into InP and InGaAs(P) have been undertaken using both sources. SIMS profile analyses show that in the case of the vapour source the profiles indicate a concentration-dependent diffusion coefficient while the solid source diffusions can be well described by a Gaussian-type profile. The usefulness of the vapour source method has been demonstrated in the fabrication of bipolar transistors which exhibit good d.c. characteristics. The solid source method is limited by the slow diffusion velocity and more gradual profile. The InGaAs(P)/InP materials system has important applications in optical communications and future high speed microwave and switching devices. Useful technologies allied to the introduction of impurities into Si by diffusion, have gradually been emerging for use in the III-V semiconductor family. Closed tube systems1 have been used in order to contain the volatile group V species and prevent surface erosion. In addition, simpler open tube systems2,3 have been developed that maintain a sufficient overpressure of the group V element. Zn and Cd p-dopants have been studied extensively because of the volatility and relatively large diffusion rates in III-V semiconductors. Opentube diffusion into both InP and InGaAs2-6 has been studied but little detail has appeared concerning InGaAs and InGaAsP. In this paper we describe a comprehensive study of the diffusion of Zn into InP and InGaAs(P) using both open-tube vapour source and a Au/Zn/Au evaporated solid source with SiNx acting both as a mask and also an encapsulant to prevent loss of Zn and decomposition of the substrate material. The techniques have been successfully applied to the fabrication of InP/lnGaAs heterojunction bipolar transistors which show good dc characteristics. Reference to InGaAs in the text implies the InP lattice-matched composition In0.53Ga0.47As.

Increased Optoelectronic Quality and Uniformity of Hydrogenated p-InP Thin Films

DOE PAGES

Wang, Hsin -Ping; Sutter-Fella, Carolin M.; Lobaccaro, Peter; ...

2016-06-08

The thin-film vapor–liquid–solid (TF-VLS) growth technique presents a promising route for high quality, scalable, and cost-effective InP thin films for optoelectronic devices. Toward this goal, careful optimization of material properties and device performance is of utmost interest. Here, we show that exposure of polycrystalline Zn-doped TF-VLS InP to a hydrogen plasma (in the following referred to as hydrogenation) results in improved optoelectronic quality as well as lateral optoelectronic uniformity. A combination of low temperature photoluminescence and transient photocurrent spectroscopy was used to analyze the energy position and relative density of defect states before and after hydrogenation. Notably, hydrogenation reduces themore » relative intragap defect density by 1 order of magnitude. As a metric to monitor lateral optoelectronic uniformity of polycrystalline TF-VLS InP, photoluminescence and electron beam induced current mapping reveal homogenization of the grain versus grain boundary upon hydrogenation. At the device level, we measured more than 260 TF-VLS InP solar cells before and after hydrogenation to verify the improved optoelectronic properties. Hydrogenation increased the average open-circuit voltage (V OC) of individual TF-VLS InP solar cells by up to 130 mV and reduced the variance in V OC for the analyzed devices.« less

Indium phosphide solar cells - Status and prospects for use in space

NASA Technical Reports Server (NTRS)

Weinberg, I.; Brinker, D. J.

1986-01-01

The current status of indium phosphide cell research is reviewed and state of the art efficiencies compared to those of GaAs and Si. It is shown that the radiation resistance of InP cells is superior to that of either GaAs or Si under 1 MeV electron and 10 MeV proton irradiation. Using lightweight blanket technology, a SEP array structure and projected cell efficiencies, array specific powers are obtained for all three cell types. Array performance is calculated as a function of time in orbit. The results indicate that arrays using InP cells can outperform those using GaAs or Si in orbits where radiation is a significant cell degradation factor. It is concluded that InP solar cells are excellent prospects for future use in the space radiation environment.

Thermally stable, low resistance contact systems for use with shallow junction p(+) nn(+) and n(+)pp(+) InP solar cells

NASA Technical Reports Server (NTRS)

Weizer, V. G.; Fatemi, N. S.; Hoffman, R. W.

1995-01-01

Two contact systems for use on shallow junction InP solar cells are described. The feature shared by these two contact systems is the absence of the metallurgical intermixing that normally takes place between the semiconductor and the contact metallization during the sintering process. The n(+)pp(+) cell contact system, consisting of a combination of Au and Ge, not only exhibits very low resistance in the as-fabricated state, but also yields post-sinter resistivity values of 1(exp -7) ohms-sq cm, with effectively no metal-InP interdiffusion. The n(+)pp(+)cell contact system, consisting of a combination of Ag and Zn, permits low resistance ohmic contact to be made directly to a shallow junction p/n InP device without harming the device itself during the contacting process.

Indium phosphide solar cells: status and prospects for use in space

NASA Technical Reports Server (NTRS)

Weinberg, I.; Brinker, D. J.

1986-01-01

The current status of indium phosphide cell research is reviewed and state of the art efficiencies compared to those of GaAs and Si. It is shown that the radiation resistance of InP cells is superior to that of either GaAs or Si under 1 MeV electron and 10 MeV proton irradiation. Using lightweight blanket technology, a SEP array structure and projected cell efficiencies, array specific powers are obtained for all three cell types. Array performance is calculated as a function of time in orbit. The results indicate that arrays using InP cells can outperform those using GaAs or Si in orbits where radiation is a significant cell degradation factor. It is concluded that InP solar cells are excellent prospects for future use in the space radiation environment.

Proceedings of the 12th Space Photovoltaic Research and Technology Conference (SPRAT 12)

NASA Technical Reports Server (NTRS)

1993-01-01

The Twelfth Space Photovoltaic Research and Technology conference was held at the NASA Lewis Research Center from 20 to 22 Oct. 1992. The papers and workshops presented in this volume report substantial progress in a variety of areas in space photovoltaics. Topics covered include: high efficiency GaAs and InP solar cells, GaAs/Ge cells as commercial items, flexible amorphous and thin film solar cells (in the early stages of pilot production), high efficiency multiple bandgap cells, laser power converters, solar cell and array technology, heteroepitaxial cells, betavoltaic energy conversion, and space radiation effects in InP cells. Space flight data on a variety of cells were also presented.

Structure, morphology and Raman and optical spectroscopic analysis of In1-xCuxP thin films grown by MOCVD technique for solar cell applications

NASA Astrophysics Data System (ADS)

Alshahrie, Ahmed; Juodkazis, S.; Al-Ghamdi, A. A.; Hafez, M.; Bronstein, L. M.

2017-10-01

Nanocrystalline In1-xCuxP thin films (0 ≤ x ≤ 0.5) have been deposited on quartz substrates by a Metal-Organic Chemical Vapor Deposition (MOCVD) technique. The effect of the copper ion content on the structural crystal lattice, morphology and optical behavior of the InP thin films was assessed using X-ray diffraction, scanning electron microscopy, atomic force microscopy, Raman spectroscopy and spectrophotometry. All films exhibited a crystalline cubic zinc blende structure, inferring the solubility of the Cu atoms in the InP crystal structure. The XRD patterns demonstrated that the inclusion of Cu atoms into the InP films forced the nanoparticles in the films to grow along the (1 1 1) direction. The AFM topography showed that the Cu ions reduce the surface roughness of deposited films. The Raman spectra of the deposited films contain the first and second order anti-stoke ΓTO, ΓLO, ΧLO + ΧTO, 2ΓTO, and ΓLO + ΓTO bands which are characteristic of the InP crystalline structure. The intensities of these bands decreased with increasing the content of the Cu atoms in the InP crystals implying the creation of a stacking fault density in the InP crystal structure. The In1-xCuxP thin films have shown high optical transparency of 90%. An increase of the optical band gap from 1.38 eV to 1.6 eV was assigned to the increase of the amount of Cu ions in the InP films. The In0.5Cu0.5P thin film exhibited remarkable optical conductivity with very low dissipation factor which makes it a promising buffer window for solar energy applications.

Effects of proton irradiation on the performance of InP/GaAs solar cells

NASA Technical Reports Server (NTRS)

Weinberg, Irving; Swartz, C. K.; Brinker, David J.; Wilt, D. M.

1991-01-01

InP solar cells are known to be more radiation resistant than either GaAs or Si. In addition, AMO total area efficiencies approaching 19 percent were attained for InP. However, the present high substrate cost presents a barrier to the eventual widespread use of InP cells in space. In addition, if cell thinning becomes desirable, their relative fragility presents a problem. For these reasons, the NASA Lewis Research Center has initiated a program, aimed at producing thin InP cells, by heteroepitaxial deposition of InP on cheaper, more durable substrates. To date, a short term feasibility study as Spire has resulted in cells processed from InP heteroepitaxially deposited on Si substrates with an intervening thin GaAs layer (InP/GaAs/Si) and cells produced from InP deposited on GaAs (InP/GaAs). As a result of this short study efficiencies of over 7 and 9 percent were achieved for InP/GaAs/Si and InP/GaAs respectively. Although these efficiencies are low, they represent a modest and encouraging starting point for a more intensive program. Obviously, when considering economy and mechanical strength, cells processed on silicon substrates are preferred. However, although the InP/GaAs cells are not the final desirable products of this program, their properties serve to highlight several roadblocks to be overcome in producing cells with the more desirable cost and strength properties. Hence, in the present case, the properties of the InP/GaAs cells before and after irradiation by 10 MeV protons are examined. A similar study of InP/GaAs/Si cells will be reported on at a later date.

Investigation of Low Cost Substrate Approaches for III-V Solar Cells

NASA Astrophysics Data System (ADS)

Lichty, Marlene Lydia

With the need for cleaner energy sources, which can displace fossil fuel, the solar cell industry is of particular interest due to the abundancy of the Sun. Silicon currently dominates terrestrial applications, but efficiency improvements have saturated. III-V based solar cells have reported the highest efficiencies, however, high costs due to substrates and fabrication processes have limited these devices to specialty applications, such as space. In order to reduce the cost associated with fabricating III-V semiconductor substrate material, two different approaches were taken in this work with a particular focus on making III-Vs more applicable outside of specialty applications, including InP, InAsnd Ge. Typical material characterization techniques were used to analyze the samples and processes studied in this thesis. The first process examined was the direct epitaxial growth of III-V materials by MOCVD on cheaper substrates. More specifically, the direct growth of InP and InAs on metal foils. A growth time study and surface coverage analysis was performed for the growth of InP. A characterization study was then conducted on the second process, the aluminum- induced crystallization of germanium to determine the effects this process had on the surface. Crystalline InP, InAs and Ge were successfully characterized in this work, and show promise for use in cheaper III-V alternatives to terrestrial energy solutions.

Correlation of electron and proton irradiation-induced damage in InP solar cells

NASA Technical Reports Server (NTRS)

Walters, Robert J.; Summers, Geoffrey P.; Messenger, Scott R.; Burke, Edward A.

1995-01-01

When determining the best solar cell technology for a particular space flight mission, accurate prediction of solar cell performance in a space radiation environment is essential. The current methodology used to make such predictions requires extensive experimental data measured under both electron and proton irradiation. Due to the rising cost of accelerators and irradiation facilities, such extensive data sets are expensive to obtain. Moreover, with the rapid development of novel cell designs, the necessary data are often not available. Therefore, a method for predicting cell degradation based on limited data is needed. Such a method has been developed at the Naval Research Laboratory based on damage correlation using 'displacement damage dose' which is the product of the non-ionizing energy loss (NIEL) and the particle fluence. Displacement damage dose is a direct analog of the ionization dose used to correlate the effects of ionizing radiations. In this method, the performance of a solar cell in a complex radiation environment can be predicted from data on a single proton energy and two electron energies, or one proton energy, one electron energy, and Co(exp 60) gammas. This method has been used to accurately predict the extensive data set measured by Anspaugh on GaAs/Ge solar cells under a wide range of electron and proton energies. In this paper, the method is applied to InP solar cells using data measured under 1 MeV electron and 3 MeV proton irradiations, and the calculations are shown to agree well with the measured data. In addition to providing accurate damage predictions, this method also provides a basis for quantitative comparisons of the performance of different cell technologies. The performance of the present InP cells is compared to that published for GaAs/Ge cells. The results show InP to be inherently more resistant to displacement energy deposition than GaAs/Ge.

Type-II InP quantum dots in wide-bandgap InGaP host for intermediate-band solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tayagaki, Takeshi, E-mail: tayagaki-t@aist.go.jp; Sugaya, Takeyoshi

2016-04-11

We demonstrate type-II quantum dots (QDs) with long carrier lifetimes in a wide-bandgap host as a promising candidate for intermediate-band solar cells. Type-II InP QDs are fabricated in a wide-bandgap InGaP host using molecular beam epitaxy. Time-resolved photoluminescence measurements reveal an extremely long carrier lifetime (i.e., greater than 30 ns). In addition, from temperature-dependent PL spectra, we find that the type-II InP QDs form a negligible valence band offset and conduction band offset of ΔE{sub c} ≈ 0.35 eV in the InGaP host. Such a type-II confinement potential for InP/InGaP QDs has a significant advantage for realizing efficient two-step photon absorption and suppressed carriermore » capture in QDs via Auger relaxation.« less

High brightness InP micropillars grown on silicon with Fermi level splitting larger than 1 eV.

PubMed

Tran, Thai-Truong D; Sun, Hao; Ng, Kar Wei; Ren, Fan; Li, Kun; Lu, Fanglu; Yablonovitch, Eli; Chang-Hasnain, Constance J

2014-06-11

The growth of III-V nanowires on silicon is a promising approach for low-cost, large-scale III-V photovoltaics. However, performances of III-V nanowire solar cells have not yet been as good as their bulk counterparts, as nanostructured light absorbers are fundamentally challenged by enhanced minority carriers surface recombination rates. The resulting nonradiative losses lead to significant reductions in the external spontaneous emission quantum yield, which, in turn, manifest as penalties in the open-circuit voltage. In this work, calibrated photoluminescence measurements are utilized to construct equivalent voltage-current characteristics relating illumination intensities to Fermi level splitting ΔF inside InP microillars. Under 1 sun, we show that splitting can exceed ΔF ∼ 0.90 eV in undoped pillars. This value can be increased to values of ΔF ∼ 0.95 eV by cleaning pillar surfaces in acidic etchants. Pillars with nanotextured surfaces can yield splitting of ΔF ∼ 0.90 eV, even though they exhibit high densities of stacking faults. Finally, by introducing n-dopants, ΔF of 1.07 eV can be achieved due to a wider bandgap energy in n-doped wurzite InP, the higher brightness of doped materials, and the extraordinarily low surface recombination velocity of InP. This is the highest reported value for InP materials grown on a silicon substrate. These results provide further evidence that InP micropillars on silicon could be a promising material for low-cost, large-scale solar cells with high efficiency.

Measurement of the minority carrier diffusion length and edge surface-recombination velocity in InP

NASA Technical Reports Server (NTRS)

Bailey, Sheila G.; Hakimzadeh, Roshanak

1993-01-01

A scanning electron microscope (SEM) was used to measure the electron (minority carrier) diffusion length (L(sub n)) and the edge surface-recombination velocity (V(sub s)) in zinc-doped Czochralski-grown InP wafers. Electron-beam-induced current (EBIC) profiles were obtained in specimens containing a Schottky barrier perpendicular to the scanned (edge) surface. An independent technique was used to measure V(sub s), and these values were used in a theoretical expression for normalized EBIC. A fit of the experimental data with this expression enabled us to determine L(sub n).

Ice Nucleation Activity of Black Carbon and Organic Aerosol Emitted from Biomass Burning

NASA Astrophysics Data System (ADS)

Rauker, A. M.; Schill, G. P.; Hill, T. C. J.; Levin, E. J.; DeMott, P. J.; Kreidenweis, S. M.

2017-12-01

Ice-nucleating particles (INPs) must be present in clouds warmer than approximately -36 °C for initial ice crystal formation to occur. Although rare, they modify the lifetime, albedo and precipitation rates of clouds. Black carbon (BC) particles are present in the upper troposphere, and have been implicated as possible INPs, but recent research has not led to a consensus on their importance as INPs. Biomass burning is known to be a source of INPs as well as a major contributor to BC concentrations. Preliminary research from both prescribed burns (Manhattan, Kanas) and wildfires (Boise, Idaho and Weldon, Colorado), using the Colorado State University Continuous Flow Diffusion Chamber (CSU-CFDC) coupled to a Single Particle Soot Photometer (SP2), suggest that BC contributed ≤ 10% to INP concentrations in biomass burning conditions. To evaluate the identity of non-BC as an INP, filters were collected downwind from the same prescribed burns and wildfires, and particles re-suspended in water were subjected to the immersion freezing method to quantify INP concentrations. The contributions of biological and total organic species to INP concentrations were determined through heat and hydrogen peroxide pre-treatments. Total INPs ranged from 0.88 - 31 L-1 air at -20 °C with 82 - 99 % of the INPs at that temperature being organic (i.e., deactivated by H2O2 digestion). Results are consistent with CSU-CFDC-SP2 derived rBC INP contributions from the same fires. The results from the study also support previous findings that prescribed burns and wildfires produce plumes enriched in INPs.

High temperature annealing of minority carrier traps in irradiated MOCVD n(+)p InP solar cell junctions

NASA Technical Reports Server (NTRS)

Messenger, S. R.; Walters, R. J.; Summers, G. P.

1993-01-01

Deep level transient spectroscopy was used to monitor thermal annealing of trapping centers in electron irradiated n(+)p InP junctions grown by metalorganic chemical vapor deposition, at temperatures ranging from 500 up to 650K. Special emphasis is given to the behavior of the minority carrier (electron) traps EA (0.24 eV), EC (0.12 eV), and ED (0.31 eV) which have received considerably less attention than the majority carrier (hole) traps H3, H4, and H5, although this work does extend the annealing behavior of the hole traps to higher temperatures than previously reported. It is found that H5 begins to anneal above 500K and is completely removed by 630K. The electron traps begin to anneal above 540K and are reduced to about half intensity by 630K. Although they each have slightly different annealing temperatures, EA, EC, and ED are all removed by 650K. A new hole trap called H3'(0.33 eV) grows as the other traps anneal and is the only trap remaining at 650K. This annealing behavior is much different than that reported for diffused junctions.

Development of InP solid state detector and liquid scintillator containing metal complex for measurement of pp/7Be solar neutrinos and neutrinoless double beta decay

NASA Astrophysics Data System (ADS)

Fukuda, Yoshiyuki; Moriyama, Shigetaka

2012-07-01

A large volume solid state detector using a semi-insulating Indium Phosphide (InP) wafer have been developed for measurement of pp/7Be solar neutrinos. Basic performance such as the charge collection efficiency and the energy resolution were measured by 60% and 20%, respectively. In order to detect two gammas (115keV and 497keV) from neutrino capture, we have designed hybrid detector which consist InP detector and liquid xenon scintillator for IPNOS experiment. New InP detector with thin electrode (Cr 50Å- Au 50Å). For another possibility, an organic liquid scintillator containing indium complex and zirconium complex were studied for a measurement of low energy solar neutrinos and neutrinosless double beta decay, respectively. Benzonitrile was chosen as a solvent because of good solubility for the quinolinolato complexes (2 wt%) and of good light yield for the scintillation induced by gamma-ray irradiation. The photo-luminescence emission spectra of InQ3 and ZrQ4 in benzonitrile was measured and liquid scintillator cocktail using InQ3 and ZrQ4 (50mg) in benzonitrile solutions (20 mL) with secondary scintillators with PPO (100mg) and POPOP (10mg) was made. The energy spectra of incident gammas were measured, and they are first results of the gamma-ray energy spectra using luminescent of metal complexes.

P/N InP solar cells on Ge wafers

NASA Technical Reports Server (NTRS)

Wojtczuk, Steven; Vernon, Stanley; Burke, Edward A.

1994-01-01

Indium phosphide (InP) P-on-N one-sun solar cells were epitaxially grown using a metalorganic chemical vapor deposition process on germanium (Ge) wafers. The motivation for this work is to replace expensive InP wafers, which are fragile and must be thick and therefore heavy, with less expensive Ge wafers, which are stronger, allowing use of thinner, lighter weight wafers. An intermediate InxGs1-xP grading layer starting as In(0.49)Ga(0.51) at the GaAs-coated Ge wafer surface and ending as InP at the top of the grading layer (backside of the InP cell) was used to attempt to bend some of the threading dislocations generated by lattice-mismatch between the Ge wafer and InP cell so they would be harmlessly confined in this grading layer. The best InP/Ge cell was independently measured by NASA-Lewis with a one-sun 25 C AMO efficiently measured by NASA-Lewis with a one-circuit photocurrent 22.6 mA/sq cm. We believe this is the first published report of an InP cell grown on a Ge wafer. Why get excited over a 9 percent InP/Ge cell? If we look at the cell weight and efficiency, a 9 percent InP cell on an 8 mil Ge wafer has about the same cell power density, 118 W/kg (BOL), as the best InP cell ever made, a 19 percent InP cell on an 18 mil InP wafer, because of the lighter Ge wafer weight. As cell panel materials become lighter, the cell weight becomes more important, and the advantage of lightweight cells to the panel power density becomes more important. In addition, although InP/Ge cells have a low beginning-of-life (BOL) efficiency due to dislocation defects, the InP/Ge cells are very radiation hard (end-of-life power similar to beginning-of-life). We have irradiated an InP/Ge cell with alpha particles to an equivalent fluence of 1.6 x 10(exp 16) 1 MeV electrons/sq cm and the efficiency is still 83 percent of its BOL value. At this fluence level, the power output of these InP/Ge cells matches the GaAs/Ge cell data tabulated in the JPL handbook. Data are presented indicating InP/Ge has more power output than GaAs/Ge cells at fluences in excess of this value.

Proceedings of the 12th Space Photovoltaic Research and Technology Conference (SPRAT 12)

DOE Office of Scientific and Technical Information (OSTI.GOV)

NONE

1993-05-01

The Twelfth Space Photovoltaic Research and Technology conference was held at the NASA Lewis Research Center from 20 to 22 Oct. 1992. The papers and workshops presented in this volume report substantial progress in a variety of areas in space photovoltaics. Topics covered include: high efficiency GaAs and InP solar cells, GaAs/Ge cells as commercial items, flexible amorphous and thin film solar cells (in the early stages of pilot production), high efficiency multiple bandgap cells, laser power converters, solar cell and array technology, heteroepitaxial cells, betavoltaic energy conversion, and space radiation effects in InP cells. Space flight data on amore » variety of cells were also presented. Separate abstracts have been prepared for articles from this report.« less

Unusual behavior of quiet-time zonal and vertical plasma drift velocities over Jicamarca during the recent extended solar minimum of 2008

NASA Astrophysics Data System (ADS)

Santos, Ângela M.; Abdu, Mangalathayil A.; Souza, Jonas R.; Batista, Inez S.; Sobral, José H. A.

2017-11-01

The influence of the recent deep and prolonged solar minimum on the daytime zonal and vertical plasma drift velocities during quiet time is investigated in this work. Analyzing the data obtained from incoherent scatter radar from Jicamarca (11.95° S, 76.87° W) we observe an anomalous behavior of the zonal plasma drift during June 2008 characterized by lower than usual daytime westward drift and its early afternoon reversal to eastward. As a case study the zonal drift observed on 24 June 2008 is modeled using a realistic low-latitude ionosphere simulated by the Sheffield University Plasmasphere-Ionosphere Model-INPE (SUPIM-INPE). The results show that an anomalously low zonal wind was mainly responsible for the observed anomalous behavior in the zonal drift. A comparative study of the vertical plasma drifts obtained from magnetometer data for some periods of maximum (2000-2002) and minimum solar activity (1998, 2008, 2010) phases reveal a considerable decrease on the E-region conductivity and the dynamo electric field during 2008. However, we believe that the contribution of these characteristics to the unusual behavior of the zonal plasma drift is significantly smaller than that arising from the anomalously low zonal wind. The SUPIM-INPE result of the critical frequency of the F layer (foF2) over Jicamarca suggested a lower radiation flux than that predicted by solar irradiance model (SOLAR2000) for June 2008.

High and low energy proton radiation damage in p/n InP MOCVD solar cells

NASA Technical Reports Server (NTRS)

Rybicki, George; Weinberg, Irving; Scheiman, Dave; Vargas-Aburto, Carlos

1995-01-01

InP p(+)nn(+) MOCVD solar cells were irradiated with 0.2 MeV and 10 MeV protons to a fluence of 10(exp 13)/sq cm. The degradation of power output, IV behavior, carrier concentration and defect concentration were observed at intermediate points throughout the irradiations. The 0.2 MeV proton irradiated solar cells suffered much greater and more rapid degradation in power output than those irradiated with 10 meV protons. The efficiency losses were accompanied by larger increases in the recombination currents in the 0.2 MeV proton irradiated solar cells. The low energy proton irradiations also had a larger impact on the series resistance of the solar cells. Despite the radiation induced damage, the carrier concentration in the base of the solar cells showed no reduction after 10 MeV or 0.2 MeV proton irradiations and even increased during irradiation with 0.2 MeV protons. In a DLTS study of the irradiated samples, the minority carrier defects H4 and H5 at E(v) + 0.33 and E(v) + 0.52 eV and the majority carrier defects E7 and E10 at E(c)- 0.39 and E(c)-0.74 eV, were observed. The defect introduction rates for the 0.2 MeV proton irradiations were about 20 times higher than for the 10 MeV proton irradiations. The defect E10, observed here after irradiation, has been shown to act as a donor in irradiated n-type InP and may be responsible for obscuring carrier removal. The results of this study are consistent with the much greater damage produced by low energy protons whose limited range causes them to stop in the active region of the solar cell.

Radiation resistance and comparative performance of ITO/InP and n/p InP homojunction solar cells

NASA Technical Reports Server (NTRS)

Weinberg, I.; Swartz, C. K.; Hart, R. E., Jr.; Coutts, T. J.

1988-01-01

The radiation resistance of ITO/InP cells processed by dc magnetron sputtering is compared to that of standard n/p InP and GaAs homojunction cells. After 20 MeV proton irradiations, it is found that the radiation resistance of the present ITO/InP cell is comparable to that of the n/p homojunction InP cell and that both InP cell types have radiation resistances significantly greater than GaAs. The relatively lower radiation resistance, observed at higher fluence, for the InP cell with the deepest junction depth, is attributed to losses in the cells emitter region. Diode parameters obtained from I sub sc - V sub oc plots, data from surface Raman spectrosocpy, and determinations of surface conductivity type are used to investigate the configuration of the ITO/InP cells. It is concluded that these latter cells are n/p homojunctions, the n-region consisting of a disordered layer at the oxide semiconductor.

Radiation resistance and comparative performance of ITO/InP and n/p InP homojunction solar cells

NASA Technical Reports Server (NTRS)

Weinberg, I.; Swartz, C. K.; Hart, R. E., Jr.; Coutts, T. J.

1988-01-01

The radiation resistance of ITO/InP cells processed by DC magnetron sputtering is compared to that of standard n/p InP and GaAs homojunction cells. After 20 MeV proton irradiations, it is found that the radiation resistance of the present ITO/InP cell is comparable to that of the n/p homojunction InP cell and that both InP cell types have radiation resistance significantly greater than GaAs. The relatively lower radiation resistance, observed at higher fluence, for the InP cell with the deepest junction depth, is attributed to losses in the cells emitter region. Diode parameters obtained from I sub sc - V sub oc plots, data from surface Raman spectroscopy, and determinations of surface conductivity types are used to investigate the configuration of the ITO/InP cells. It is concluded that thesee latter cells are n/p homojunctions, the n-region consisting of a disordered layer at the oxide semiconductor.

Wafer-Scale Integration of Inverted Nanopyramid Arrays for Advanced Light Trapping in Crystalline Silicon Thin Film Solar Cells.

PubMed

Zhou, Suqiong; Yang, Zhenhai; Gao, Pingqi; Li, Xiaofeng; Yang, Xi; Wang, Dan; He, Jian; Ying, Zhiqin; Ye, Jichun

2016-12-01

Crystalline silicon thin film (c-Si TF) solar cells with an active layer thickness of a few micrometers may provide a viable pathway for further sustainable development of photovoltaic technology, because of its potentials in cost reduction and high efficiency. However, the performance of such cells is largely constrained by the deteriorated light absorption of the ultrathin photoactive material. Here, we report an efficient light-trapping strategy in c-Si TFs (~20 μm in thickness) that utilizes two-dimensional (2D) arrays of inverted nanopyramid (INP) as surface texturing. Three types of INP arrays with typical periodicities of 300, 670, and 1400 nm, either on front, rear, or both surfaces of the c-Si TFs, are fabricated by scalable colloidal lithography and anisotropic wet etch technique. With the extra aid of antireflection coating, the sufficient optical absorption of 20-μm-thick c-Si with a double-sided 1400-nm INP arrays yields a photocurrent density of 39.86 mA/cm(2), which is about 76 % higher than the flat counterpart (22.63 mA/cm(2)) and is only 3 % lower than the value of Lambertian limit (41.10 mA/cm(2)). The novel surface texturing scheme with 2D INP arrays has the advantages of excellent antireflection and light-trapping capabilities, an inherent low parasitic surface area, a negligible surface damage, and a good compatibility for subsequent process steps, making it a good alternative for high-performance c-Si TF solar cells.

NASDA activities in space solar power system research, development and applications

NASA Technical Reports Server (NTRS)

Matsuda, Sumio; Yamamoto, Yasunari; Uesugi, Masato

1993-01-01

NASDA activities in solar cell research, development, and applications are described. First, current technologies for space solar cells such as Si, GaAs, and InP are reviewed. Second, future space solar cell technologies intended to be used on satellites of 21st century are discussed. Next, the flight data of solar cell monitor on ETS-V is shown. Finally, establishing the universal space solar cell calibration system is proposed.

Increased efficiency with surface texturing in ITO/InP solar cells

NASA Technical Reports Server (NTRS)

Jenkins, Phillip; Landis, Geoffrey A.; Fatemi, Navid; Li, Xiaonan; Scheiman, David; Bailey, Sheila

1992-01-01

Optimization of an InP solar cell with a V-grooved surface is discussed. Total internal reflection in the coverglass reduces surface reflection and can recover light reflected from the front metallization. Results from the first ITO/InP solar cells on low-angle V-grooved substrates are presented, showing a 5.8 percent increase in current.

Indium diffusion through high-k dielectrics in high-k/InP stacks

NASA Astrophysics Data System (ADS)

Dong, H.; Cabrera, W.; Galatage, R. V.; Santosh KC, Brennan, B.; Qin, X.; McDonnell, S.; Zhernokletov, D.; Hinkle, C. L.; Cho, K.; Chabal, Y. J.; Wallace, R. M.

2013-08-01

Evidence of indium diffusion through high-k dielectric (Al2O3 and HfO2) films grown on InP (100) by atomic layer deposition is observed by angle resolved X-ray photoelectron spectroscopy and low energy ion scattering spectroscopy. The analysis establishes that In-out diffusion occurs and results in the formation of a POx rich interface.

The Contribution of Black Carbon to Ice Nucleating Particle Concentrations from Prescribed Burns and Wildfires

NASA Astrophysics Data System (ADS)

Schill, G. P.; DeMott, P. J.; Suski, K. J.; Emerson, E. W.; Rauker, A. M.; Kodros, J.; Levin, E. J.; Hill, T. C. J.; Farmer, D.; Pierce, J. R.; Kreidenweis, S. M.

2017-12-01

Black carbon (BC) has been implicated as a potential immersion-mode ice nucleating particle (INP) because of its relative abundance in the upper troposphere. Furthermore, several field and aircraft measurements have observed positive correlations between BC and INP concentrations. Despite this, the efficiency of BC to act as an immersion-mode INP is poorly constrained. Indeed, previous results from laboratory studies are in conflict, with estimates of BC's impact on INP ranging from no impact to being efficient enough to rival the well-known INP mineral dust. It is, however, becoming clear that the ice nucleation activity of BC may depend on both its fuel type and combustion conditions. For example, previous work has shown that diesel exhaust BC is an extremely poor immersion-mode INP, but laboratory burns of biomass fuels indicate that BC can contribute up to 70% of all INP for some fuel types. Given these dependencies, we propose that sampling from real-world biomass burning sources would provide the most useful new information on the contribution of BC to atmospheric INP. In this work, we will present recent results looking at the sources of INP from prescribed burns and wildfires. To determine the specific contribution of refractory black carbon (rBC) to INP concentrations, we utilized a new technique that couples the Single Particle Soot Photometer (SP2) to the Colorado State University Continuous Flow Diffusion Chamber (CFDC). The SP2 utilizes laser-induced incandescence to quantify rBC mass on a particle-by-particle basis; in doing so, it also selectively destroys rBC particles by heating them to their vaporization temperature. Thus, the SP2 can be used as a selective pre-filter for rBC into the CFDC. Furthermore, we have also used a filter-based technique for measuring INP, the Ice Spectrometer, which can employ pretreatments such as heating and digestion by H2O2 to determine the contribution of heat-labile and organic particles, respectively.

The NASA Space Solar Cell Advanced Research Program

NASA Technical Reports Server (NTRS)

Flood, Dennis J.

1989-01-01

Two major requirements for space solar cells are high efficiency and survivability in the naturally occurring charged particle space radiation environment. Performance limits for silicon space cells are well understood. Advanced cells using GaAs and InP are under development to provide significantly improved capability for the future.

High and Low Energy Proton Radiation Damage in p/n InP MOCVD Solar Cells

NASA Technical Reports Server (NTRS)

Rybicki, George; Weinberg, Irv; Scheiman, Dave; Vargas-Aburto, Carlos; Uribe, Roberto

1995-01-01

InP p(+)/n/n(+) solar cells, fabricated by metal organic chemical vapor deposition, (MOCVD) were irradiated with 0.2 MeV and 10 MeV protons to a fluence of 10(exp 13)/sq cm. The power output degradation, IV behavior, carrier concentration and defect concentration were observed at intermediate points throughout the irradiations. The 0.2 MeV proton-irradiated solar cells suffered much greater and more rapid degradation in power output than those irradiated with 10 MeV protons. The efficiency losses were accompanied by larger increases in the recombination currents in the 0.2 MeV proton-irradiated solar cells. The low energy proton irradiations also had a larger impact on the series resistance of the solar cells. Despite the radiation induced damage, the carrier concentration in the base of the solar cells showed no reduction after 10 MeV or 0.2 MeV proton irradiations and even increased during irradiation with 0.2 MeV protons. In a deep level transient spectroscopy (DLTS) study of the irradiated samples, the minority carrier defects H4 and H5 at E(sub v) + 0.33 and E(sub v) + 0.52 eV and the majority carrier defects E7 and El0 at E(sub c) - 0.39 and E(sub c) - 0.74 eV, were observed. The defect introduction rates for the 0.2 MeV proton irradiations were about 20 times higher than for the 10 MeV proton irradiations. The defect El0, observed here after irradiation, has been shown to act as a donor in irradiated n-type InP and may be responsible for obscuring carrier removal. The results of this study are consistent with the much greater damage produced by low energy protons whose limited range causes them to stop in the active region of the solar cell.

Wurtzite-Phased InP Micropillars Grown on Silicon with Low Surface Recombination Velocity.

PubMed

Li, Kun; Ng, Kar Wei; Tran, Thai-Truong D; Sun, Hao; Lu, Fanglu; Chang-Hasnain, Connie J

2015-11-11

The direct growth of III-V nanostructures on silicon has shown great promise in the integration of optoelectronics with silicon-based technologies. Our previous work showed that scaling up nanostructures to microsize while maintaining high quality heterogeneous integration opens a pathway toward a complete photonic integrated circuit and high-efficiency cost-effective solar cells. In this paper, we present a thorough material study of novel metastable InP micropillars monolithically grown on silicon, focusing on two enabling aspects of this technology-the stress relaxation mechanism at the heterogeneous interface and the microstructure surface quality. Aberration-corrected transmission electron microscopy studies show that InP grows directly on silicon without any amorphous layer in between. A set of periodic dislocations was found at the heterointerface, relaxing the 8% lattice mismatch between InP and Si. Single crystalline InP therefore can grow on top of the fully relaxed template, yielding high-quality micropillars with diameters expanding beyond 1 μm. An interesting power-dependence trend of carrier recombination lifetimes was captured for these InP micropillars at room temperature, for the first time for micro/nanostructures. By simply combining internal quantum efficiency with carrier lifetime, we revealed the recombination dynamics of nonradiative and radiative portions separately. A very low surface recombination velocity of 1.1 × 10(3) cm/sec was obtained. In addition, we experimentally estimated the radiative recombination B coefficient of 2.0 × 10(-10) cm(3)/sec for pure wurtzite-phased InP. These values are comparable with those obtained from InP bulk. Exceeding the limits of conventional nanowires, our InP micropillars combine the strengths of both nanostructures and bulk materials and will provide an avenue in heterogeneous integration of III-V semiconductor materials onto silicon platforms.

Naval Research Laboratory's programs in advanced indium phosphide solar cell development

NASA Technical Reports Server (NTRS)

Summers, Geoffrey P.

1995-01-01

The Naval Research Laboratory has been involved in developing InP solar cell technology since 1988. The purpose of these programs was to produce advanced cells for use in very high radiation environments, either as a result of operating satellites in the Van Allen belts or for very long duration missions in other orbits. Richard Statler was technical representative on the first program, with Spire Corporation as the contractor, which eventually produced several hundred, high efficiency 2 x 2 sq cm single crystal InP cells. The shallow homojunction technology which was developed in this program enabled cells to be made with AMO, one sun efficiencies greater than 19%. Many of these cells have been flown on space experiments, including PASP Plus, which have confirmed the high radiation resistance of InP cells. NRL has also published widely on the radiation response of these cells and also on radiation-induced defect levels detected by DLTS, especially the work of Rob Walters and Scott Messenger. In 1990 NRL began another Navy-sponsored program with Tim Coutts and Mark Wanlass at the National Renewable Energy Laboratory (NREL), to develop a one sun, two terminal space version of the InP-InGaAs tandem junction cell being investigated at NREL for terrestrial applications. These cells were grown on InP substrates. Several cells with AM0, one sun efficiencies greater than 22% were produced. Two 2 x 2 sq cm cells were incorporated on the STRV lA/B solar cell experiment. These were the only two junction, tandem cells on the STRV experiment. The high cost and relative brittleness of InP wafers meant that if InP cell technology were to become a viable space power source, the superior radiation resistance of InP would have to be combined with a cheaper and more robust substrate. The main technical challenge was to overcome the effect of the dislocations produced by the lattice mismatch at the interface of the two materials. Over the last few years, NRL and Steve Wojtczuk at Spire have been developing a single junction InP on Si cell, in an ONR-sponsored SBIR program. Both cell polarities were investigated and the best efficiencies to date (approximately 13% on a 2 x 4 sq cm cell) were achieved with n/p cells. Earlier this year NRL began a program with ASEC to develop a two terminal InP-InGaAs tandem cell on a Ge substrate. RTI and NREL are subcontractors on this program. The results of an ONR-sponsored study of the potential market for InP/Si cells will be discussed. Also the technical status of both the InP/Si and the InP-InGaAs/Ge programs will be given. The technical challenges still remaining will be briefly described.

Polycrystalline indium phosphide on silicon by indium assisted growth in hydride vapor phase epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Metaferia, Wondwosen; Sun, Yan-Ting, E-mail: yasun@kth.se; Lourdudoss, Sebastian

2014-07-21

Polycrystalline InP was grown on Si(001) and Si(111) substrates by using indium (In) metal as a starting material in hydride vapor phase epitaxy (HVPE) reactor. In metal was deposited on silicon substrates by thermal evaporation technique. The deposited In resulted in islands of different size and was found to be polycrystalline in nature. Different growth experiments of growing InP were performed, and the growth mechanism was investigated. Atomic force microscopy and scanning electron microscopy for morphological investigation, Scanning Auger microscopy for surface and compositional analyses, powder X-ray diffraction for crystallinity, and micro photoluminescence for optical quality assessment were conducted. Itmore » is shown that the growth starts first by phosphidisation of the In islands to InP followed by subsequent selective deposition of InP in HVPE regardless of the Si substrate orientation. Polycrystalline InP of large grain size is achieved and the growth rate as high as 21 μm/h is obtained on both substrates. Sulfur doping of the polycrystalline InP was investigated by growing alternating layers of sulfur doped and unintentionally doped InP for equal interval of time. These layers could be delineated by stain etching showing that enough amount of sulfur can be incorporated. Grains of large lateral dimension up to 3 μm polycrystalline InP on Si with good morphological and optical quality is obtained. The process is generic and it can also be applied for the growth of other polycrystalline III–V semiconductor layers on low cost and flexible substrates for solar cell applications.« less

Novel Engineered Compound Semiconductor Heterostructures for Advanced Electronics Applications

DTIC Science & Technology

1992-06-22

and using an optimal 100 A set-back layer. This is an indication that carbon exhibits a low diffusivity in Ino.53GaO.47As films , too. Several issues...number of hydrocar- CC14 flow of 100 sccm. The p-type carrier concentration is bon sources has either not been successful, or has led to films highest...in InP by measuring the acceptor luminescence in undoped InP grown by LPE , PH3-VPE and LEC techniques and in intentionally doped material prepared by

Photovoltaic characteristics of n(+)pp(+) InP solar cells grown by OMVPE

NASA Technical Reports Server (NTRS)

Tyagi, S.; Singh, K.; Bhimnathwala, H.; Ghandhi, S. K.; Borrego, J. M.

1990-01-01

The photovoltaic characteristics of n(+)/p/p(+) homojunction InP solar cells fabricated by organometallic vapor-phase epitaxy (OMVPE) are described. The cells are characterized by I-V, C-V and quantum efficiency measurements, and simulations are used to obtain various device and material parameters. The I-V characteristics show a high recombination rate in the depletion region; this is shown to be independent of the impurity used. It is shown that cadmium is easier to use as an acceptor for the p base and p(+) buffer and is therefore beneficial. The high quantum efficiency of 98 percent at long wavelengths measured in these cells indicates a very good collection efficiency in the base. The short-wavelength quantum efficiency is poor, indicating a high surface recombination.

Performance, size, mass, and cost estimates for projected 1kW EOL Si, InP, and GaAs arrays

NASA Technical Reports Server (NTRS)

Slifer, Luther W., Jr.

1991-01-01

One method of evaluating the potential of emerging solar cell and array technologies is to compare their projected capabilities in space flight applications to those of established Si solar cells and arrays. Such an application-oriented comparison provides an integrated view of the elemental comparisons of efficiency, radiation resistance, temperature sensitivity, size, mass, and cost in combination. In addition, the assumptions necessary to make the comparisons provide insights helpful toward determining necessary areas of development or evaluation. Finally, as developments and evaluations progress, the results can be used in more precisely defining the overall potential of the new technologies in comparison to existing technologies. The projected capabilities of Si, InP, and GaAs cells and arrays are compared.

Building a Six-Junction Inverted Metamorphic Concentrator Solar Cell

DOE PAGES

Geisz, John F.; Steiner, Myles A.; Jain, Nikhil; ...

2017-12-20

We propose practical six-junction (6J) inverted metamorphic multijunction (IMM) concentrator solar cell designs with the potential to exceed 50% efficiency using moderately high quality junction materials. We demonstrate the top three junctions and their monolithic integration lattice matched to GaAs using 2.1-eV AlGaInP, 1.7-eV AlGaAs or GaInAsP, and 1.4-eV GaAs with external radiative efficiencies >0.1%. We demonstrate tunnel junctions with peak tunneling current >400 A/cm 2 that are transparent to <2.1-eV light. We compare the bottom three GaInAs(p) junctions with bandgaps of 1.2, 1.0, and 0.7 eV grown on InP and transparent metamorphic grades with low dislocation densities. The solutionmore » to an integration challenge resulting from Zn diffusion in the GaAs junction is illustrated in a five-junction IMM. Excellent 1-sun performance is demonstrated in a complete 6J IMM device with VOC = 5.15 V, and a promising pathway toward >50% efficiency at high concentrations is presented.« less

Building a Six-Junction Inverted Metamorphic Concentrator Solar Cell

DOE Office of Scientific and Technical Information (OSTI.GOV)

Geisz, John F.; Steiner, Myles A.; Jain, Nikhil

We propose practical six-junction (6J) inverted metamorphic multijunction (IMM) concentrator solar cell designs with the potential to exceed 50% efficiency using moderately high quality junction materials. We demonstrate the top three junctions and their monolithic integration lattice matched to GaAs using 2.1-eV AlGaInP, 1.7-eV AlGaAs or GaInAsP, and 1.4-eV GaAs with external radiative efficiencies >0.1%. We demonstrate tunnel junctions with peak tunneling current >400 A/cm 2 that are transparent to <2.1-eV light. We compare the bottom three GaInAs(p) junctions with bandgaps of 1.2, 1.0, and 0.7 eV grown on InP and transparent metamorphic grades with low dislocation densities. The solutionmore » to an integration challenge resulting from Zn diffusion in the GaAs junction is illustrated in a five-junction IMM. Excellent 1-sun performance is demonstrated in a complete 6J IMM device with VOC = 5.15 V, and a promising pathway toward >50% efficiency at high concentrations is presented.« less

Uncertainty in counting ice nucleating particles with continuous flow diffusion chambers

NASA Astrophysics Data System (ADS)

Garimella, Sarvesh; Rothenberg, Daniel A.; Wolf, Martin J.; David, Robert O.; Kanji, Zamin A.; Wang, Chien; Rösch, Michael; Cziczo, Daniel J.

2017-09-01

This study investigates the measurement of ice nucleating particle (INP) concentrations and sizing of crystals using continuous flow diffusion chambers (CFDCs). CFDCs have been deployed for decades to measure the formation of INPs under controlled humidity and temperature conditions in laboratory studies and by ambient aerosol populations. These measurements have, in turn, been used to construct parameterizations for use in models by relating the formation of ice crystals to state variables such as temperature and humidity as well as aerosol particle properties such as composition and number. We show here that assumptions of ideal instrument behavior are not supported by measurements made with a commercially available CFDC, the SPectrometer for Ice Nucleation (SPIN), and the instrument on which it is based, the Zurich Ice Nucleation Chamber (ZINC). Non-ideal instrument behavior, which is likely inherent to varying degrees in all CFDCs, is caused by exposure of particles to different humidities and/or temperatures than predicated from instrument theory of operation. This can result in a systematic, and variable, underestimation of reported INP concentrations. We find here variable correction factors from 1.5 to 9.5, consistent with previous literature values. We use a machine learning approach to show that non-ideality is most likely due to small-scale flow features where the aerosols are combined with sheath flows. Machine learning is also used to minimize the uncertainty in measured INP concentrations. We suggest that detailed measurement, on an instrument-by-instrument basis, be performed to characterize this uncertainty.

A unique approach to determine the ice nucleating potential of soot-containing aerosol from biomass combustion

NASA Astrophysics Data System (ADS)

Levin, E. J.; McMeeking, G. R.; McCluskey, C.; DeMott, P. J.; Kreidenweis, S. M.

2013-12-01

Ice nucleating particles (INP) play a crucial role in cloud and precipitation development in mixed phase clouds by catalyzing ice formation at temperatures warmer than -36 C. Despite their importance, however, there is still considerable uncertainty as to the sources and chemical nature of INP. Water insoluble particles such as mineral dust and certain biological aerosols have been shown to be efficient ice nuclei, and soot particles have also been suggested as potential INP. Biomass burning, such as wildfires and prescribed burning, is a large contributor to atmospheric soot concentrations, and could therefore be a potentially important source of INP. Both laboratory and field studies have detected enhanced INP concentrations in smoke plumes; however, the chemical composition of these INP is still uncertain as fires emit and loft a complex mixture of aerosol particles. In this work we employ a novel approach to selectively remove soot aerosol from the sample stream to determine the specific contribution of soot to INP concentrations. A number of commonly consumed biomass fuels were burned in the U.S. Forest Service combustion laboratory during the FLAME-4 (Fire Laboratory At Missoula Experiment - 4) study. Number concentrations of INP acting in the condensation and immersion freezing modes and total aerosol greater than 500 nm in diameter (N500) were measured using the Colorado State University Continuous Flow Diffusion Chamber (CFDC). To determine the contribution of soot to INP concentrations, the sample stream was passed through a Single Particle Soot Photometer (SP2; Droplet Measurement Technologies) which employs laser induced incandescence (LII) to detect soot containing particles and total soot mass. During LII, soot containing particles are vaporized and removed from the sample while non-soot containing particles pass through the instrument unaffected. By sampling the exhaust of the SP2 with the CFDC and alternately cycling laser power on and off we were able to estimate the contribution of soot to total INP. Reductions in both N500 and INP were observed when the laser power was on, indicating both the presence of soot in the total aerosol and the INP fraction of these particles. However, considerable variability was observed in the fraction of INP composed of soot-containing particles with a range from ~0 - 70% for the biomass types and combustion conditions examined.

Long-Term INP Measurements within the BACCHUS project

NASA Astrophysics Data System (ADS)

Schrod, Jann; Bingemer, Heinz; Curtius, Joachim

2016-04-01

The European research project BACCHUS (Impact of Biogenic versus Anthropogenic emissions on Clouds and Climate: towards a Holistic UnderStanding) studies the interactions between aerosols, clouds and the climate system, and tries to reconstruct pre-industrial aerosol and cloud conditions from data collected in pristine environments. The number concentration of Ice Nucleating Particles (INP) is an important, yet scarcely known parameter. As a partner of Work package 1 of BACCHUS we began in September 2014 to operate a globally spanned network of four INP sampling stations, which is the first of its kind. The stations are located at the ATTO observatory in the Brazilian Rainforest, the Caribbean Sea (Martinique), the Zeppelin Observatory at Svalbard in the Arctic, and in central Europe (Germany). Samples are collected routinely every day or every few days by electrostatic precipitation of aerosol particles onto Si substrates. The samples are stored in petri-slides, and shipped to our laboratory in Frankfurt, Germany. The number of ice nucleating particles on the substrate is analyzed in the isothermal static diffusion chamber FRIDGE by growing ice on the INP and photographing and counting the crystals. The measurements in the temperature range from -20°C to -30°C and relative humidities of 100-135% (with respect to ice) address primarily the deposition/condensation nucleation modes. Here we present INP and supporting aerosol data from this novel INP network for the first time.

Comparative measurements of ambient atmospheric concentrations of ice nucleating particles using multiple immersion freezing methods and a continuous flow diffusion chamber

NASA Astrophysics Data System (ADS)

DeMott, Paul J.; Hill, Thomas C. J.; Petters, Markus D.; Bertram, Allan K.; Tobo, Yutaka; Mason, Ryan H.; Suski, Kaitlyn J.; McCluskey, Christina S.; Levin, Ezra J. T.; Schill, Gregory P.; Boose, Yvonne; Rauker, Anne Marie; Miller, Anna J.; Zaragoza, Jake; Rocci, Katherine; Rothfuss, Nicholas E.; Taylor, Hans P.; Hader, John D.; Chou, Cedric; Huffman, J. Alex; Pöschl, Ulrich; Prenni, Anthony J.; Kreidenweis, Sonia M.

2017-09-01

A number of new measurement methods for ice nucleating particles (INPs) have been introduced in recent years, and it is important to address how these methods compare. Laboratory comparisons of instruments sampling major INP types are common, but few comparisons have occurred for ambient aerosol measurements exploring the utility, consistency and complementarity of different methods to cover the large dynamic range of INP concentrations that exists in the atmosphere. In this study, we assess the comparability of four offline immersion freezing measurement methods (Colorado State University ice spectrometer, IS; North Carolina State University cold stage, CS; National Institute for Polar Research Cryogenic Refrigerator Applied to Freezing Test, CRAFT; University of British Columbia micro-orifice uniform deposit impactor-droplet freezing technique, MOUDI-DFT) and an online method (continuous flow diffusion chamber, CFDC) used in a manner deemed to promote/maximize immersion freezing, for the detection of INPs in ambient aerosols at different locations and in different sampling scenarios. We also investigated the comparability of different aerosol collection methods used with offline immersion freezing instruments. Excellent agreement between all methods could be obtained for several cases of co-sampling with perfect temporal overlap. Even for sampling periods that were not fully equivalent, the deviations between atmospheric INP number concentrations measured with different methods were mostly less than 1 order of magnitude. In some cases, however, the deviations were larger and not explicable without sampling and measurement artifacts. Overall, the immersion freezing methods seem to effectively capture INPs that activate as single particles in the modestly supercooled temperature regime (> -20 °C), although more comparisons are needed in this temperature regime that is difficult to access with online methods. Relative to the CFDC method, three immersion freezing methods that disperse particles into a bulk liquid (IS, CS, CRAFT) exhibit a positive bias in measured INP number concentrations below -20 °C, increasing with decreasing temperature. This bias was present but much less pronounced for a method that condenses separate water droplets onto limited numbers of particles prior to cooling and freezing (MOUDI-DFT). Potential reasons for the observed differences are discussed, and further investigations proposed to elucidate the role of all factors involved.

A three solar cell system based on a self-supporting, transparent AlGaAs top solar cell

NASA Technical Reports Server (NTRS)

Negley, Gerald H.; Rhoads, Sandra L.; Terranova, Nancy E.; Mcneely, James B.; Barnett, Allen M.

1989-01-01

Development of a three solar cell stack can lead to practical efficiencies greater than 30 percent (1x,AM0). A theoretical efficiency limitation of 43.7 percent at AM0 and one sun is predicted by this model. Including expected losses, a practical system efficiency of 36.8 percent is anticipated. These calculations are based on a 1.93eV/1.43eV/0.89eV energy band gap combination. AlGaAs/GaAs/GaInAsP materials can be used with a six-terminal wiring configuration. The key issues for multijunction solar cells are the top and middle solar cell performance and the sub-bandgap transparency. AstroPower has developed a technique to fabricate AlGaAs solar cells on rugged, self-supporting, transparent AlGaAs substrates. Top solar cell efficiencies greater than 11 percent AM0 have been achieved. State-of-the-art GaAs or InP devices will be used for the middle solar cell. GaInAsP will be used to fabricate the bottom solar cell. This material is lattice-matched to InP and offers a wide range of bandgaps for optimization of the three solar cell stack. Liquid phase epitaxy is being used to grow the quaternary material. Initial solar cells have shown open-circuit voltages of 462 mV for a bandgap of 0.92eV. Design rules for the multijunction three solar cell stack are discussed. The progress in the development of the self-supporting AlGaAs top solar cell and the GaInAsP bottom solar cell is presented.

Uncertainty in counting ice nucleating particles with continuous flow diffusion chambers

DOE PAGES

Garimella, Sarvesh; Rothenberg, Daniel A.; Wolf, Martin J.; ...

2017-09-14

This study investigates the measurement of ice nucleating particle (INP) concentrations and sizing of crystals using continuous flow diffusion chambers (CFDCs). CFDCs have been deployed for decades to measure the formation of INPs under controlled humidity and temperature conditions in laboratory studies and by ambient aerosol populations. These measurements have, in turn, been used to construct parameterizations for use in models by relating the formation of ice crystals to state variables such as temperature and humidity as well as aerosol particle properties such as composition and number. We show here that assumptions of ideal instrument behavior are not supported by measurements mademore » with a commercially available CFDC, the SPectrometer for Ice Nucleation (SPIN), and the instrument on which it is based, the Zurich Ice Nucleation Chamber (ZINC). Non-ideal instrument behavior, which is likely inherent to varying degrees in all CFDCs, is caused by exposure of particles to different humidities and/or temperatures than predicated from instrument theory of operation. This can result in a systematic, and variable, underestimation of reported INP concentrations. Here we find here variable correction factors from 1.5 to 9.5, consistent with previous literature values. We use a machine learning approach to show that non-ideality is most likely due to small-scale flow features where the aerosols are combined with sheath flows. Machine learning is also used to minimize the uncertainty in measured INP concentrations. Finally, we suggest that detailed measurement, on an instrument-by-instrument basis, be performed to characterize this uncertainty.« less

Diameter Dependence of Planar Defects in InP Nanowires

PubMed Central

Wang, Fengyun; Wang, Chao; Wang, Yiqian; Zhang, Minghuan; Han, Zhenlian; Yip, SenPo; Shen, Lifan; Han, Ning; Pun, Edwin Y. B.; Ho, Johnny C.

2016-01-01

In this work, extensive characterization and complementary theoretical analysis have been carried out on Au-catalyzed InP nanowires in order to understand the planar defect formation as a function of nanowire diameter. From the detailed transmission electron microscopic measurements, the density of stacking faults and twin defects are found to monotonically decrease as the nanowire diameter is decreased to 10 nm, and the chemical analysis clearly indicates the drastic impact of In catalytic supersaturation in Au nanoparticles on the minimized planar defect formation in miniaturized nanowires. Specifically, during the chemical vapor deposition of InP nanowires, a significant amount of planar defects is created when the catalyst seed sizes are increased with the lower degree of In supersaturation as dictated by the Gibbs-Thomson effect, and an insufficient In diffusion (or Au-rich enhancement) would lead to a reduced and non-uniform In precipitation at the NW growing interface. The results presented here provide an insight into the fabrication of “bottom-up” InP NWs with minimized defect concentration which are suitable for various device applications. PMID:27616584

Diameter Dependence of Planar Defects in InP Nanowires.

PubMed

Wang, Fengyun; Wang, Chao; Wang, Yiqian; Zhang, Minghuan; Han, Zhenlian; Yip, SenPo; Shen, Lifan; Han, Ning; Pun, Edwin Y B; Ho, Johnny C

2016-09-12

In this work, extensive characterization and complementary theoretical analysis have been carried out on Au-catalyzed InP nanowires in order to understand the planar defect formation as a function of nanowire diameter. From the detailed transmission electron microscopic measurements, the density of stacking faults and twin defects are found to monotonically decrease as the nanowire diameter is decreased to 10 nm, and the chemical analysis clearly indicates the drastic impact of In catalytic supersaturation in Au nanoparticles on the minimized planar defect formation in miniaturized nanowires. Specifically, during the chemical vapor deposition of InP nanowires, a significant amount of planar defects is created when the catalyst seed sizes are increased with the lower degree of In supersaturation as dictated by the Gibbs-Thomson effect, and an insufficient In diffusion (or Au-rich enhancement) would lead to a reduced and non-uniform In precipitation at the NW growing interface. The results presented here provide an insight into the fabrication of "bottom-up" InP NWs with minimized defect concentration which are suitable for various device applications.

Thermal degradation of InP in open tube processing: deep-level photoluminescence

NASA Astrophysics Data System (ADS)

Banerjee, S.; Srivastava, A. K.; Arora, B. M.

1990-09-01

Thermal processing of InP at temperatures above 500 °C is indispensable in the growth and device fabrication of InGaAsP alloy semiconductors for optoelectronic and microwave applications. Incongruous loss of P at these temperatures creates native defects and their complexes. The presence of such defects modifies the electrical and optical properties of the material resulting in poor device performance. In addition, native defects play a significant role in dopant diffusion which is a topic of current interest. We have measured deep-level photoluminescence (PL) on undoped InP after heat treatments at 500 and 550 °C in an open-tube processing system in different protective environments of powder InP, and Sn-InP melt together with an InP cover. In this paper we shall present the PL results which have bearing on the question of defects. We find that (1) the Sn-InP melt provides better protection in preserving the overall luminescence in InP; (2) the deep-level PL related to defects has at least two components in the virgin samples, viz., MnIn, and band C, which is a native defect complex related to VP; (3) a new defect appears in samples heated in a P-deficient environment; and (4) the enhancement in the deep-level luminescence intensity after heat treatment can be attributed to the excess defect concentrations existing under nonequilibrium conditions of an open-tube processing environment.

Enhanced Photocatalytic Reduction of CO2 to CO through TiO2 Passivation of InP in Ionic Liquids.

PubMed

Zeng, Guangtong; Qiu, Jing; Hou, Bingya; Shi, Haotian; Lin, Yongjing; Hettick, Mark; Javey, Ali; Cronin, Stephen B

2015-09-21

A robust and reliable method for improving the photocatalytic performance of InP, which is one of the best known materials for solar photoconversion (i.e., solar cells). In this article, we report substantial improvements (up to 18×) in the photocatalytic yields for CO2 reduction to CO through the surface passivation of InP with TiO2 deposited by atomic layer deposition (ALD). Here, the main mechanisms of enhancement are the introduction of catalytically active sites and the formation of a pn-junction. Photoelectrochemical reactions were carried out in a nonaqueous solution consisting of ionic liquid, 1-ethyl-3-methylimidazolium tetrafluoroborate ([EMIM]BF4), dissolved in acetonitrile, which enables CO2 reduction with a Faradaic efficiency of 99% at an underpotential of +0.78 V. While the photocatalytic yield increases with the addition of the TiO2 layer, a corresponding drop in the photoluminescence intensity indicates the presence of catalytically active sites, which cause an increase in the electron-hole pair recombination rate. NMR spectra show that the [EMIM](+) ions in solution form an intermediate complex with CO2(-), thus lowering the energy barrier of this reaction. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

FFT-impedance spectroscopy analysis of the growth of magnetic metal nanowires in ultra-high aspect ratio InP membranes

NASA Astrophysics Data System (ADS)

Gerngross, M.-D.; Carstensen, J.; Föll, H.; Adelung, R.

2016-01-01

This paper reports on the characterization of the electrochemical growth process of magnetic nanowires in ultra-high-aspect ratio InP membranes via in situ fast Fourier transform impedance spectroscopy in a typical frequency range from 75 Hz to 18.5 kHz. The measured impedance data from the Ni, Co, and FeCo can be very well fitted using the same electric equivalent circuit consisting of a series resistance in serial connection to an RC-element and a Maxwell element. The impedance data clearly indicate the similarities in the growth behavior of Ni, Co and FeCo nanowires in ultra-high aspect ratio InP membranes—the beneficial impact of boric acid on the metal deposition in ultra-high aspect ratio membranes and the diffusion limitation of boric acid, as well as differences such as passivation or side reactions.

Observation of Spectral Diffusion in Crystals Using Single Impurity Molecules

DTIC Science & Technology

1990-10-31

from 12pentacene photophysical parameters including intersystem crossing . Apparently (and not surprisingly), the local pentacene environment this... pentacene molecules inp-terphenyl, both stable as well as spectrally diffusing single molecules can be observed. 20 DISTRIBUTION/AVAILABILITY OF ABSTRACT 121...with ultrathin sublimed crystals have removed this obstacle. For the case of pentacene impurities in crystals of p-terphenyl, we observe two radically

Recent Activities on the Embrace Space Weather Regional Warning Center: the New Space Weather Data Center

NASA Astrophysics Data System (ADS)

Denardini, Clezio Marcos; Dal Lago, Alisson; Mendes, Odim; Batista, Inez S.; SantAnna, Nilson; Gatto, Rubens; Takahashi, Hisao; Costa, D. Joaquim; Banik Padua, Marcelo; Campos Velho, Haroldo

2016-07-01

On August 2007 the National Institute for Space Research started a task force to develop and operate a space weather program, which is known by the acronyms Embrace that stands for the Portuguese statement "Estudo e Monitoramento BRAasileiro de Clima Espacial" Program (Brazilian Space Weather Study and Monitoring program). The mission of the Embrace/INPE program is to monitor the Solar-Terrestrial environment, the magnetosphere, the upper atmosphere and the ground induced currents to prevent effects on technological and economic activities. The Embrace/INPE system monitors the physical parameters of the Sun-Earth environment, such as Active Regions (AR) in the Sun and solar radiation by using radio telescope, Coronal Mass Ejection (CME) information by satellite and ground-based cosmic ray monitoring, geomagnetic activity by the magnetometer network, and ionospheric disturbance by ionospheric sounders and using data collected by four GPS receiver network, geomagnetic activity by a magnetometer network, and provides a forecasting for Total Electronic Content (TEC) - 24 hours ahead - using a version of the SUPIM model which assimilates the two latter data using nudging approach. Most of these physical parameters are daily published on the Brazilian space weather program web portal, related to the entire network sensors available. Regarding outreach, it has being published a daily bulletin in Portuguese and English with the status of the space weather environment on the Sun, the Interplanetary Medium and close to the Earth. Since December 2011, all these activities are carried out at the Embrace Headquarter, a building located at the INPE's main campus. Recently, a comprehensive data bank and an interface layer are under commissioning to allow an easy and direct access to all the space weather data collected by Embrace through the Embrace web Portal. The information being released encompasses data from: (a) the Embrace Digisonde Network (Embrace DigiNet) that monitors the ionospheric profiles in two equatorial sites and in two low latitude sites; (b) several solar radio telescopes to monitor solar activity (under development); (c) the matrix of the GNSS TEC map over South America; (d) the Embrace Airglow All-sky Imagers Network (Embrace GlowNet); and (d) the Embrace Magnetometer Network (Embrace Magnet), all of them in South America. Also, the system allows subscription to space weather alerts and reports. Contacting Author: C. M. Denardini (clezio.denardin@inpe.br)

Enhanced photovoltaic performance of an inclined nanowire array solar cell.

PubMed

Wu, Yao; Yan, Xin; Zhang, Xia; Ren, Xiaomin

2015-11-30

An innovative solar cell based on inclined p-i-n nanowire array is designed and analyzed. The results show that the inclined geometry can sufficiently increase the conversion efficiency of solar cells by enhancing the absorption of light in the active region. By tuning the nanowire array density, nanowire diameter, nanowire length, as well as the proportion of intrinsic region of the inclined nanowire solar cell, a remarkable efficiency in excess of 16% can be obtained in GaAs. Similar results have been obtained in InP and Si nanowire solar cells, demonstrating the universality of the performance enhancement of inclined nanowire arrays.

InP tunnel junctions for InP/InGaAs tandem solar cells

NASA Technical Reports Server (NTRS)

Vilela, Mauro F.; Freundlich, Alex; Renaud, P.; Medelci, N.; Bensaoula, A.

1996-01-01

We report, for the first time, an epitaxially grown InP p(+)/n(++) tunnel junction. A diode with peak current densities up to 1600 A/cm and maximum specific resistivities (Vp/Ip - peak voltage to peak current ratio) in the range of 10(exp -4)Omega cm(exp 2) is obtained. This peak current density is comparable to the highest results previously reported for lattice matched In(0.53)Ga(0.47)As tunnel junctions. Both results were obtained using chemical beam epitaxy (CBE). In this paper we discuss the electrical characteristics of these tunnel diodes and how the growth conditions influence them.

InP Tunnel Junctions for InP/InGaAs Tandem Solar Cells

NASA Technical Reports Server (NTRS)

Vilela, M. F.; Medelci, N.; Bensaoula, A.; Freundlich, A.; Renaud, P.

1995-01-01

We report, for the first time, an epitaxially grown InP p(+)/n(++) tunnel junction. A diode with peak current densities up to 1600 Al/sq cm and maximum specific resistivities (Vp/lp - peak voltage to peak current ratio) in the range of 10(exp -4)Om sq cm is obtained. This peak current density is comparable to the highest results previously reported for lattice matched In(0.53)Ga(0.47)As tunnel junctions. Both results were obtained using chemical beam epitaxy (CBE). In this paper we discuss the electrical characteristics of these tunnel diodes and how the growth conditions influence them.

AES, EELS and TRIM simulation method study of InP(100) subjected to Ar+, He+ and H+ ions bombardment.

NASA Astrophysics Data System (ADS)

Ghaffour, M.; Abdellaoui, A.; Bouslama, M.; Ouerdane, A.; Abidri, B.

2012-06-01

Auger Electron Spectroscopy (AES) and Electron Energy Loss Spectroscopy (EELS) have been performed in order to investigate the InP(100) surface subjected to ions bombardment. The InP(100) surface is always contaminated by carbon and oxygen revealed by C-KLL and O-KLL AES spectra recorded just after introduction of the sample in the UHV spectrometer chamber. The usually cleaning process of the surface is the bombardment by argon ions. However, even at low energy of ions beam (300 eV) indium clusters and phosphorus vacancies are usually formed on the surface. The aim of our study is to compare the behaviour of the surface when submitted to He+ or H+ ions bombardment. The helium ions accelerated at 500V voltage and for 45 mn allow removing contaminants but induces damaged and no stoichiometric surface. The proton ions were accelerated at low energy of 500 eV to bombard the InP surface at room temperature. The proton ions broke the In-P chemical bonds to induce the formation of In metal islands. Such a chemical reactivity between hydrogen and phosphorus led to form chemical species such as PH and PH3, which desorbed from the surface. The chemical susceptibly and the small size of H+ advantaged their diffusion into bulk. Since the experimental methods alone were not able to give us with accuracy the disturbed depth of the target by these ions. We associate to the AES and EELS spectroscopies, the TRIM (Transport and Range of Ions in Matter) simulation method in order to show the mechanism of interaction between Ar+, He+ or H+ ions and InP and determine the disturbed depth of the target by argon, helium or proton ions.

Far field emission profile of pure wurtzite InP nanowires

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bulgarini, Gabriele, E-mail: g.bulgarini@tudelft.nl; Reimer, Michael E.; Zwiller, Val

2014-11-10

We report on the far field emission profile of pure wurtzite InP nanowires in comparison to InP nanowires with predominantly zincblende crystal structure. The emission profile is measured on individual nanowires using Fourier microscopy. The most intense photoluminescence of wurtzite nanowires is collected at small angles with respect to the nanowire growth axis. In contrast, zincblende nanowires present a minimum of the collected light intensity in the direction of the nanowire growth. Results are explained by the orientation of electric dipoles responsible for the photoluminescence, which is different from wurtzite to zincblende. Wurtzite nanowires have dipoles oriented perpendicular to themore » nanowire growth direction, whereas zincblende nanowires have dipoles oriented along the nanowire axis. This interpretation is confirmed by both numerical simulations and polarization dependent photoluminescence spectroscopy. Knowledge of the dipole orientation in nanostructures is crucial for developing a wide range of photonic devices such as light-emitting diodes, photodetectors, and solar cells.« less

Ice-nucleating particle emissions from photochemically aged diesel and biodiesel exhaust

NASA Astrophysics Data System (ADS)

Schill, G. P.; Jathar, S. H.; Kodros, J. K.; Levin, E. J. T.; Galang, A. M.; Friedman, B.; Link, M. F.; Farmer, D. K.; Pierce, J. R.; Kreidenweis, S. M.; DeMott, P. J.

2016-05-01

Immersion-mode ice-nucleating particle (INP) concentrations from an off-road diesel engine were measured using a continuous-flow diffusion chamber at -30°C. Both petrodiesel and biodiesel were utilized, and the exhaust was aged up to 1.5 photochemically equivalent days using an oxidative flow reactor. We found that aged and unaged diesel exhaust of both fuels is not likely to contribute to atmospheric INP concentrations at mixed-phase cloud conditions. To explore this further, a new limit-of-detection parameterization for ice nucleation on diesel exhaust was developed. Using a global-chemical transport model, potential black carbon INP (INPBC) concentrations were determined using a current literature INPBC parameterization and the limit-of-detection parameterization. Model outputs indicate that the current literature parameterization likely overemphasizes INPBC concentrations, especially in the Northern Hemisphere. These results highlight the need to integrate new INPBC parameterizations into global climate models as generalized INPBC parameterizations are not valid for diesel exhaust.

Two-terminal monolithic InP-based tandem solar cells with tunneling intercell ohmic connections

NASA Technical Reports Server (NTRS)

Shen, C. C.; Chang, P. T.; Emery, K. A.

1991-01-01

A monolithic two-terminal InP/InGaAsP tandem solar cell was successfully fabricated. This tandem solar cell consists of a p/n InP homojunction top subcell and a 0.95 eV p/n InGaAsP homojunction bottom subcell. A patterned 0.95 eV n(+)/p(+) InGaAsP tunnel diode was employed as an intercell ohmic connection. The solar cell structure was prepared by two-step liquid phase epitaxial growth. Under one sun, AM1.5 global illumination, the best tandem cell delivered a conversion efficiency of 14.8 pct.

Junction characteristics of indium tin oxide/indium phosphide solar cells

NASA Astrophysics Data System (ADS)

Sheldon, P.; Ahrenkiel, R. K.; Hayes, R. E.; Russell, P. E.; Nottenburg, R. N.; Kazmerski, L. L.

Efficient indium tin oxide (ITO)/p-InP solar cells have been fabricated. Typical uncorrected efficiencies range from 9-12 percent at AM1 intensities. It is shown that deposition of ITO causes a semi-insulating layer at the InP surface as determined by C-V measurements. The thickness of this layer is approximately 750 A. We believe that this high resistivity region is due to surface accumulation of Fe at the ITO/InP interface.

Towards the Ultimate Multi-Junction Solar Cell using Transfer Printing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lumb, Matthew P.; Meitl, Matt; Schmieder, Kenneth J.

2016-11-21

Transfer printing is a uniquely enabling technology for the heterogeneous integration of III-V materials grown on dissimilar substrates. In this paper, we present experimental results for a mechanically stacked tandem cell using GaAs and GaSb-based materials capable of harvesting the entire solar spectrum with 44.5% efficiency. We also present the latest results toward developing an ultra-high performance heterogeneous cell, integrating materials grown on GaAs, InP and GaSb platforms.

Photoelectrochemistry of III-V epitaxial layers and nanowires for solar energy conversion

NASA Astrophysics Data System (ADS)

Parameshwaran, Vijay; Enck, Ryan; Chung, Roy; Kelley, Stephen; Sampath, Anand; Reed, Meredith; Xu, Xiaoqing; Clemens, Bruce

2017-05-01

III-V materials, which exhibit high absorption coefficients and charge carrier mobility, are ideal templates for solar energy conversion applications. This work describes the photoelectrochemistry research in several IIIV/electrolyte junctions as an enabler for device design for solar chemical reactions. By designing lattice-matched epitaxial growth of InGaP and GaP on GaAs and Si, respectively, extended depletion region electrodes achieve photovoltages which provide an additional boost to the underlying substrate photovoltage. The InGaP/GaAs and GaP/Si electrodes drive hydrogen evolution currents under aqueous conditions. By using nanowires of InN and InP under carefully controlled growth conditions, current and capacitance measurements are obtained to reveal the nature of the nanowire-electrolyte interface and how light is translated into photocurrent for InP and a photovoltage in InN. The materials system is expanded into the III-V nitride semiconductors, in which it is shown that varying the morphology of GaN on silicon yields insights to how the interface and light conversion is modulated as a basis for future designs. Current extensions of this work address growth and tuning of the III-V nitride electrodes with doping and polarization engineering for efficient coupling to solar-driven chemical reactions, and rapid-throughput methods for III-V nanomaterials synthesis in this materials space.

Electron-irradiated two-terminal, monolithic InP/Ga0.47In0.53As tandem solar cells and annealing of radiation damage

NASA Technical Reports Server (NTRS)

Cotal, H. L.; Walters, Robert J.; Summers, Geoffrey P.; Messenger, Scott R.

1994-01-01

Radiation damage results from two-terminal monolithic InP/Ga(0.47)In(0.53)As tandem solar cells subject to 1 MeV electron irradiation are presented. Efficiencies greater than 22 percent have been measured by the National Renewable Energy Laboratory from 2x2 sq cm cells at 1 sun, AMO (25 C). The short circuit current density, open circuit voltage and fill factor are found to tolerate the same amount of radiation at low fluences. At high fluence levels, slight differences are observed. Decreasing the base amount of radiation at the Ga(0.47)In(0.53)As bottomcell improved the radiation resistance of J(sub sc) dramatically. This is turn, extended the series current flow through the subcell substantially up to a fluence of 3x10(exp 15) cm(exp -2) compared to 3x10(exp 14) cm(exp -2), as observed previously. The degradation of the maximum power output form tandem device is comparable to that from shallow homojunction (SHJ) InP solar cells, and the mechanism responsible for such degradation is explained in terms of the radiation response of the component cells. Annealing studies revealed that the recovery of the tandem cell response is dictated by the annealing characteristics exhibited by SHJ InP solar cells.

Radiation and temperature effects in gallium arsenide, indium phosphide and silicon solar cells

NASA Technical Reports Server (NTRS)

Weinberg, I.; Swartz, C. K.; Hart, R. E., Jr.; Statler, R. L.

1987-01-01

The effects of radiation on performance are determined for both n(+)p and p(+)n GaAs and InP cells and for silicon n(+)p cells. It is found that the radiation resistance of InP is greater than that of both GaAs and Si under 1 MeV electron irradiation. For silicon, the observed decreased radiation resistance with decreased resistivity is attributed to the presence of a radiation induced boron-oxygen defect. Comparison of radiation damage in both p(+)n and n(+)p GaAs cells yields a decreased radiation resistance for the n(+)p cell attributable to increased series resistance, decreased shunt resistance, and relatively greater losses in the cell's p-region. For InP, the n(+)p configuration is found to have greater radiation resistance than the p(+)n cell. The increased loss in this latter cell is attributed to losses in the cell's emitter region. Temperature dependency results are interpreted using a theoretical relation for dVoc/cT which predicts that increased Voc should results in decreased numerical values for dPm/dT. The predicted correlation is observed for GaAs but not for InP a result which is attributed to variations in cell processing.

Radiation and temperature effects in gallium arsenide, indium phosphide, and silicon solar cells

NASA Technical Reports Server (NTRS)

Weinberg, I.; Swartz, C. K.; Hart, R. E., Jr.; Statler, R. L.

1987-01-01

The effects of radiation on performance are determined for both n+p and p+n GaAs and InP cells and for silicon n+p cells. It is found that the radiation resistance of InP is greater than that of both GaAs and Si under 1-MeV electron irradiation. For silicon, the observed decreased radiation resistance with decreased resistivity is attributed to the presence of a radiation-induced boron-oxygen defect. Comparison of radiation damage in both p+n and n+p GaAs cells yields a decreased radiation resistance for the n+p cell attributable to increased series resistance, decreased shunt resistance, and relatively greater losses in the cell's p-region. For InP, the n+p configuration is found to have greater radiation resistance than the p+n cell. The increased loss in this latter cell is attributed to losses in the cell's emitter region. Temperature dependency results are interpreted using a theoretical relation for dVoc/dT, which predicts that increased Voc should result in decreased numerical values for dPm/dT. The predicted correlation is observed for GaAs but not for InP, a result which is attributed to variations in cell processing.

Material growth and characterization for solid state devices

NASA Technical Reports Server (NTRS)

Stefanakos, E. K.; Collis, W. J.; Abul-Fadl, A.; Iyer, S.

1984-01-01

Manganese was used as the dopant for p-type InGaAs layers grown on semi-insulating (Fe-doped) and n-type (Sn-doped) InP substrates. Optical, electrical (Hall) and SIMS measurements were used to characterize the layers. Mn-diffusion into the substrate (during the growth of In GaAs) was observed only when Fe-doped substrates were used. Quaternary layers of two compositions corresponding to wavelengths (energy gaps) of approximated 1.52 micrometers were successfully grown at a constant temperature of 640 C and InP was grown in the temperature range of 640 C to 655 C. A study of the effect of pulses on the growth velocity of InP indicated no significant change as long as the average applied current was kept constant. A system for depositing films of Al2O3 by the pyrolysis of aluminum isopropoxide was designed and built. Deposited layers on Si were characterized with an ellipsometer and exhibited indices of refraction between 1.582 and 1.622 for films on the order of 3000 A thick. Undoped and p-type (Mn-doped) InGaAs epitaxial layers were also grown on Fe-doped InP substrates through windows in sputtered SiO2 (3200 A thick) layers.

Electrochemical growth of Co nanowires in ultra-high aspect ratio InP membranes: FFT-impedance spectroscopy of the growth process and magnetic properties.

PubMed

Gerngross, Mark-Daniel; Carstensen, Jürgen; Föll, Helmut

2014-01-01

The electrochemical growth of Co nanowires in ultra-high aspect ratio InP membranes has been investigated by fast Fourier transform-impedance spectroscopy (FFT-IS) in the frequency range from 75 Hz to 18.5 kHz. The impedance data could be fitted very well using an electric circuit equivalent model with a series resistance connected in series to a simple resistor-capacitor (RC) element and a Maxwell element. Based on the impedance data, the Co deposition in ultra-high aspect ratio InP membranes can be divided into two different Co deposition processes. The corresponding share of each process on the overall Co deposition can be determined directly from the transfer resistances of the two processes. The impedance data clearly show the beneficial impact of boric acid on the Co deposition and also indicate a diffusion limitation of boric acid in ultra-high aspect ratio InP membranes. The grown Co nanowires are polycrystalline with a very small grain size. They show a narrow hysteresis loop with a preferential orientation of the easy magnetization direction along the long nanowire axis due to the arising shape anisotropy of the Co nanowires.

Design and optimization of the plasmonic graphene/InP thin-film solar-cell structure

NASA Astrophysics Data System (ADS)

Nematpour, Abedin; Nikoufard, Mahmoud; Mehragha, Rouholla

2018-06-01

In this paper, a graphene/InP thin-film Schottky-junction solar cell with a periodic array of plasmonic back-reflector is proposed. In this structure, a single-layer graphene sheet is deposited on the surface of the InP to form a Schottky junction. Then, the layer stack of the proposed solar-cell is optimized to have a maximum optical absorption of 〈A W〉  =  0.985 (98.5%) and short-circuit current density of J sc  =  33.01 mA cm‑2.

Space Photovoltaic Research and Technology, 1989

NASA Technical Reports Server (NTRS)

1991-01-01

Remarkable progress on a wide variety of approaches in space photovoltaics, for both near and far term applications is reported. Papers were presented in a variety of technical areas, including multi-junction cell technology, GaAs and InP cells, system studies, cell and array development, and non-solar direct conversion. Five workshops were held to discuss the following topics: mechanical versus monolithic multi-junction cells; strategy in space flight experiments; non-solar direct conversion; indium phosphide cells; and space cell theory and modeling.

Effective Surface Passivation of InP Nanowires by Atomic-Layer-Deposited Al2O3 with POx Interlayer.

PubMed

Black, L E; Cavalli, A; Verheijen, M A; Haverkort, J E M; Bakkers, E P A M; Kessels, W M M

2017-10-11

III/V semiconductor nanostructures have significant potential in device applications, but effective surface passivation is critical due to their large surface-to-volume ratio. For InP such passivation has proven particularly difficult, with substantial depassivation generally observed following dielectric deposition on InP surfaces. We present a novel approach based on passivation with a phosphorus-rich interfacial oxide deposited using a low-temperature process, which is critical to avoid P-desorption. For this purpose we have chosen a PO x layer deposited in a plasma-assisted atomic layer deposition (ALD) system at room temperature. Since PO x is known to be hygroscopic and therefore unstable in atmosphere, we encapsulate this layer with a thin ALD Al 2 O 3 capping layer to form a PO x /Al 2 O 3 stack. This passivation scheme is capable of improving the photoluminescence (PL) efficiency of our state-of-the-art wurtzite (WZ) InP nanowires by a factor of ∼20 at low excitation. If we apply the rate equation analysis advocated by some authors, we derive a PL internal quantum efficiency (IQE) of 75% for our passivated wires at high excitation. Our results indicate that it is more reliable to calculate the IQE as the ratio of the integrated PL intensity at room temperature to that at 10 K. By this means we derive an IQE of 27% for the passivated wires at high excitation (>10 kW cm -2 ), which constitutes an unprecedented level of performance for undoped InP nanowires. This conclusion is supported by time-resolved PL decay lifetimes, which are also shown to be significantly higher than previously reported for similar wires. The passivation scheme displays excellent long-term stability (>7 months) and is additionally shown to substantially improve the thermal stability of InP surfaces (>300 °C), significantly expanding the temperature window for device processing. Such effective surface passivation is a key enabling technology for InP nanowire devices such as nanolasers and solar cells.

Effective Surface Passivation of InP Nanowires by Atomic-Layer-Deposited Al2O3 with POx Interlayer

PubMed Central

2017-01-01

III/V semiconductor nanostructures have significant potential in device applications, but effective surface passivation is critical due to their large surface-to-volume ratio. For InP such passivation has proven particularly difficult, with substantial depassivation generally observed following dielectric deposition on InP surfaces. We present a novel approach based on passivation with a phosphorus-rich interfacial oxide deposited using a low-temperature process, which is critical to avoid P-desorption. For this purpose we have chosen a POx layer deposited in a plasma-assisted atomic layer deposition (ALD) system at room temperature. Since POx is known to be hygroscopic and therefore unstable in atmosphere, we encapsulate this layer with a thin ALD Al2O3 capping layer to form a POx/Al2O3 stack. This passivation scheme is capable of improving the photoluminescence (PL) efficiency of our state-of-the-art wurtzite (WZ) InP nanowires by a factor of ∼20 at low excitation. If we apply the rate equation analysis advocated by some authors, we derive a PL internal quantum efficiency (IQE) of 75% for our passivated wires at high excitation. Our results indicate that it is more reliable to calculate the IQE as the ratio of the integrated PL intensity at room temperature to that at 10 K. By this means we derive an IQE of 27% for the passivated wires at high excitation (>10 kW cm–2), which constitutes an unprecedented level of performance for undoped InP nanowires. This conclusion is supported by time-resolved PL decay lifetimes, which are also shown to be significantly higher than previously reported for similar wires. The passivation scheme displays excellent long-term stability (>7 months) and is additionally shown to substantially improve the thermal stability of InP surfaces (>300 °C), significantly expanding the temperature window for device processing. Such effective surface passivation is a key enabling technology for InP nanowire devices such as nanolasers and solar cells. PMID:28885032

Ferroelectric behavior of Al substituted InP

NASA Astrophysics Data System (ADS)

Park, C. S.; Lee, S. J.; Kang, T. W.; Fu, D. J.

2006-12-01

InP:Al was grown by the liquid phase epitaxy method on InP (100)substrates. X-ray diffraction confirmed the epitaxial growth along (100) of AlInP. Photoluminescence spectra showed the evident effect of Al content. Ferroelectric characterization of the sample revealed a clear hysteresis in its polarization-voltage curves. The remnant polarization of InP:Al amounts to 1.99μC/cm2 at 300Hz, and it decreases with increasing temperature in a continuous and diffusive manner. Resistance measurement demonstrated a maximum resistance at 160°C, tentatively consistent with the transition temperature of remnant polarization. The ferroelectricity is accounted by the collective interaction between nuclei having the microscopic instability from the cation size difference in InP:Al.

Dilute phosphide nitride materials as photocathodes for electrochemical solar energy conversion

NASA Astrophysics Data System (ADS)

Parameshwaran, Vijay; Xu, Xiaoqing; Kang, Yangsen; Harris, James; Wong, H.-S. Philip; Clemens, Bruce

2013-03-01

Dilute nitride materials have been used in a variety of III-V photonic devices, but have not been significantly explored in photoelectrochemical applications. This work focuses on using dilute phosphide nitride materials of the form (Al,In)P1-xNx as photocathodes for the generation of hydrogen fuel from solar energy. Heteroepitaxial MOCVD growth of AlPN thin films on GaP yields high quality material with a direct bandgap energy of 2.218 eV. Aligned epitaxial growth of InP and GaP nanowires on InP and Si substrates, respectively, provides a template for designing nanostructured photocathodes over a large area. Electrochemical testing of a AlPN/GaP heterostructure electrode yields up to a sixfold increase in photocurrent enhancement under blue light illumination as compared to a GaP electrode. Additionally, the AlPN/GaP electrodes exhibit no degradation in performance after galvanostatic biasing over time. These results show that (Al,In)P1-xNx is a promising materials system for use in nanoscale photocathode structures.

MOMBE selective infill growth of InP:Si and InGaAs:Si and large area MOMBE regrowth

NASA Astrophysics Data System (ADS)

Schelhase, S.; Böttcher, J.; Gibis, R.; Künzel, H.; Paraskevopoulos, A.

1996-07-01

MOMBE selective infill growth (SIG) of silicon-doped InP and InGaAs was investigated by variation of the principal growth parameters, i.e. temperature, {V}/{III}- ratio and rate. Excellent surface morphology in conjunction with perfect selectivity and defect-free vertical interfaces between the grown layer and the etched substrate sidewall was achieved by an appropriate optimization of the selective growth conditions for InP as well as, for the first time, InGaAs. In the case of SIG of InP, smooth growth boundaries were obtained in the [01¯1] direction, whereas in the [01¯1¯] direction minor growth perturbations occur, which are related to a strong orientation dependent diffusion behavior of the growth species on the growth front. In the case of SIG of InGaAs, slight perturbations accompanied by facet formation at the edges of the selectively grown windows were observed. In the perspective of device application, homogeneous large area MOMBE InGaAs regrowth of the embedded structures was successfully achieved.

Using depolarization to quantify ice nucleating particle concentrations: a new method

NASA Astrophysics Data System (ADS)

Zenker, Jake; Collier, Kristen N.; Xu, Guanglang; Yang, Ping; Levin, Ezra J. T.; Suski, Kaitlyn J.; DeMott, Paul J.; Brooks, Sarah D.

2017-12-01

We have developed a new method to determine ice nucleating particle (INP) concentrations observed by the Texas A&M University continuous flow diffusion chamber (CFDC) under a wide range of operating conditions. In this study, we evaluate differences in particle optical properties detected by the Cloud and Aerosol Spectrometer with POLarization (CASPOL) to differentiate between ice crystals, droplets, and aerosols. The depolarization signal from the CASPOL instrument is used to determine the occurrence of water droplet breakthrough (WDBT) conditions in the CFDC. The standard procedure for determining INP concentration is to count all particles that have grown beyond a nominal size cutoff as ice crystals. During WDBT this procedure overestimates INP concentration, because large droplets are miscounted as ice crystals. Here we design a new analysis method based on depolarization ratio that can extend the range of operating conditions of the CFDC. The method agrees reasonably well with the traditional method under non-WDBT conditions with a mean percent error of ±32.1 %. Additionally, a comparison with the Colorado State University CFDC shows that the new analysis method can be used reliably during WDBT conditions.

Preliminary Design of the Brazilian's National Institute for Space Research Broadband Radiometer for Solar Observations

NASA Astrophysics Data System (ADS)

Berni, L. A.; Vieira, L. E. A.; Savonov, G. S.; Dal Lago, A.; Mendes, O.; Silva, M. R.; Guarnieri, F.; Sampaio, M.; Barbosa, M. J.; Vilas Boas, J. V.; Branco, R. H. F.; Nishimori, M.; Silva, L. A.; Carlesso, F.; Rodríguez Gómez, J. M.; Alves, L. R.; Vaz Castilho, B.; Santos, J.; Silva Paula, A.; Cardoso, F.

2017-10-01

The Total Solar Irradiance (TSI), which is the total radiation arriving at Earth's atmosphere from the Sun, is one of the most important forcing of the Earths climate. Measurements of the TSI have been made employing instruments on board several space-based platforms during the last four solar cycles. However, combining these measurements is still challenging due to the degradation of the sensor elements and the long-term stability of the electronics. Here we describe the preliminary efforts to design an absolute radiometer based on the principle of electrical substitution that is under development at Brazilian's National Institute for Space Research (INPE).

Enhanced EOS photovoltaic power system capability with InP solar cells

NASA Technical Reports Server (NTRS)

Bailey, Sheila G.; Weinberg, Irving; Flood, Dennis J.

1991-01-01

The Earth Observing System (EOS), which is part of the International Mission to Planet Earth, is NASA's main contribution to the Global Change Research Program which opens a new era in international cooperation to study the Earth's environment. Five large platforms are to be launched into polar orbit, two by NASA, two by ESA, and one by the Japanese. In such an orbit the radiation resistance of indium phosphide solar cells combined with the potential of utilizing five micron cell structures yields an increase of 10 percent in the payload capability. If further combined with the advanced photovoltaic solar array the payload savings approaches 12 percent.

Space Photovoltaic Research and Technology 1995

NASA Technical Reports Server (NTRS)

Landis, Geoffrey (Compiler)

1995-01-01

The Fourteenth Space Photovoltaic Research and Technology conference was held at the NASA Lewis Research Center from October 24-26, 1995. The abstracts presented in this volume report substantial progress in a variety of areas in space photovoltaics. Technical and review papers were presented in many areas, including high efficiency GaAs and InP solar cells, GaAs/Ge cells as commercial items, high efficiency multiple bandgap cells, solar cell and array technology, heteroepitaxial cells, thermophotovoltaic energy conversion, and space radiation effects. Space flight data on a variety of cells were also presented.

Space Photovoltaic Research and Technology 1995

NASA Technical Reports Server (NTRS)

Landis, Geoffrey (Compiler)

1996-01-01

The Fourteenth Space Photovoltaic Research and Technology conference was held at the NASA Lewis Research Center from October 24-26, 1995. The abstracts presented in this volume report substantial progress in a variety of areas in space photovoltaics. Technical and review papers were presented in many areas, including high efficiency GaAs and InP solar cells, GaAs/Ge cells as commercial items, high efficiency multiple bandgap cells, solar cell and array technology, heteroepitaxial cells, thermophotovoltaic energy conversion, and space radiation effects. Space flight data on a variety of cells were also presented.

Electrochemical Characterization of InP and GaAs Based Structures for Space Solar Cell Applications.

NASA Technical Reports Server (NTRS)

Faur, Maria; Faur, Mircea; Jenkins, Philip P.; Goradia, Manju; Wilt, David M.

1994-01-01

In this paper the emphasis is on accurate majority carrier concentration EC-V profiling of structures based on Indium Phosphide and Gallium Arsenide, using a newly developed electrolyte based on Hydrogen Flouride, Acetic Acid, Phosphoric Acid, 1-phenyl-2-propanamine and Ammonia Diflouride. Some preliminary data on the use of this electrolyte for determining the energy distribution of surface and deep states of these structures, applicable to fabrication process optimization and radiation induced defects studies of solar cells, are also provided.

Integrated, Flexible, High-efficiency Solar Cells: Epitaxial Lift-Off GaAs Solar Cells and Enabling Substrate Reuse

DTIC Science & Technology

2012-08-01

substrate cells. 3   GaAs CIGS CdTe α-SI Organic Trip. jun. Metam. C-Si Trip. Jun. Ge sub InP Power/Weight  Tradeoff...40   -  AR  coa<ng  ( ZnS /MgF2)150nm...AR  coa<ng  ( ZnS /MgF2)150nm                                      $5   -  HF

Chemical beam epitaxy for high efficiency photovoltaic devices

NASA Technical Reports Server (NTRS)

Bensaoula, A.; Freundlich, A.; Vilela, M. F.; Medelci, N.; Renaud, P.

1994-01-01

InP-based multijunction tandem solar cells show great promise for the conversion efficiency (eta) and high radiation resistance. InP and its related ternary and quanternary compound semiconductors such as InGaAs and InGaAsP offer desirable combinations for energy bandgap values which are very suitable for multijunction tandem solar cell applications. The monolithically integrated InP/In(0.53)Ga(0.47)As tandem solar cells are expected to reach efficiencies above 30 percent. Wanlass, et.al., have reported AMO efficiencies as high as 20.1% for two terminal cells fabricated using atmospheric-pressure metalorganic vapor phase epitaxy (APMOVPE). The main limitations in their technique are first related to the degradation of the intercell ohmic contact (IOC), in this case the In(0.53)Ga(0.47)As tunnel junction during the growth of the top InP subcell structure, and second to the current matching, often limited by the In(0.53)Ga(0.47)As bottom subcell. Chemical beam epitaxy (CBE) has been shown to allow the growth of high quality materials with reproducible complex compositional and doping profiles. The main advantage of CBE compared to metalorganic chemical vapor deposition (MOCVD), the most popular technique for InP-based photovoltaic device fabrication, is the ability to grow high purity epilayers at much lower temperatures (450 C - 530 C). In a recent report it was shown that cost-wise CBE is a breakthrough technology for photovoltaic (PV) solar energy progress in the energy conversion efficiency of InP-based solar cells fabricated using chemical beam epitaxy. This communication summarizes our recent results on PV devices and demonstrates the strength of this new technology.

Pathway to 50% efficient inverted metamorphic concentrator solar cells

NASA Astrophysics Data System (ADS)

Geisz, John F.; Steiner, Myles A.; Jain, Nikhil; Schulte, Kevin L.; France, Ryan M.; McMahon, William E.; Perl, Emmett E.; Horowitz, Kelsey A. W.; Friedman, Daniel J.

2017-09-01

Series-connected five (5J) and six junction (6J) concentrator solar cell strategies have the realistic potential to exceed 50% efficiency to enable low-cost CPV systems. We propose three strategies for developing a practical 6J device. We have overcome many of the challenges required to build such concentrator solar cell devices: We have developed 2.1 eV AlGaInP, 1.7 eV AlGaAs, and 1.7 eV GaInAsP junctions with external radiative efficiency greater than 0.1%. We have developed a transparent tunnel junction that absorbs minimal light intended for the second junction yet resists degradation under thermal load. We have developed metamorphic grades from the GaAs to the InP lattice constant that are transparent to sub-GaAs bandgap light. We have grown and compared low bandgap junctions (0.7eV - 1.2 eV) using metamorphic GaInAs, metamorphic GaInAsP, and GaInAsP lattice-matched to InP. And finally, we have demonstrated excellent performance in a high voltage, low current 4 junction inverted metamorphic device using 2.1, 1.7, 1.4, and 1.1 eV junctions with over 8.7 mA/cm2 one-sun current density that operates up to 1000 suns without tunnel junction failure.

Pathway to 50% Efficient Inverted Metamorphic Concentrator Solar Cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Geisz, John F; Steiner, Myles A; Jain, Nikhil

Series-connected five (5J) and six junction (6J) concentrator solar cell strategies have the realistic potential to exceed 50% efficiency to enable low-cost CPV systems. We propose three strategies for developing a practical 6J device. We have overcome many of the challenges required to build such concentrator solar cell devices: We have developed 2.1 eV AlGaInP, 1.7 eV AlGaAs, and 1.7 eV GaInAsP junctions with external radiative efficiency greater than 0.1%. We have developed a transparent tunnel junction that absorbs minimal light intended for the second junction yet resists degradation under thermal load. We have developed metamorphic grades from the GaAsmore » to the InP lattice constant that are transparent to sub-GaAs bandgap light. We have grown and compared low bandgap junctions (0.7eV - 1.2 eV) using metamorphic GaInAs, metamorphic GaInAsP, and GaInAsP lattice-matched to InP. And finally, we have demonstrated excellent performance in a high voltage, low current 4 junction inverted metamorphic device using 2.1, 1.7, 1.4, and 1.1 eV junctions with over 8.7 mA/cm2 one-sun current density that operates up to 1000 suns without tunnel junction failure.« less

High Radiation Resistance IMM Solar Cell

NASA Technical Reports Server (NTRS)

Pan, Noren

2015-01-01

Due to high launch costs, weight reduction is a key driver for the development of new solar cell technologies suitable for space applications. This project is developing a unique triple-junction inverted metamorphic multijunction (IMM) technology that enables the manufacture of very lightweight, low-cost InGaAsP-based multijunction solar cells. This IMM technology consists of indium (In) and phosphorous (P) solar cell active materials, which are designed to improve the radiation-resistant properties of the triple-junction solar cell while maintaining high efficiency. The intrinsic radiation hardness of InP materials makes them of great interest for building solar cells suitable for deployment in harsh radiation environments, such as medium Earth orbit and missions to the outer planets. NASA Glenn's recently developed epitaxial lift-off (ELO) process also will be applied to this new structure, which will enable the fabrication of the IMM structure without the substrate.

Effects of Plasma Hydrogenation on Trapping Properties of Dislocations in Heteroepitaxial InP/GaAs

NASA Technical Reports Server (NTRS)

Ringel, S. A.; Chatterjee, B.

1994-01-01

In previous work, we have demonstrated the effectiveness of a post-growth hydrogen plasma treatment for passivating the electrical activity of dislocations in metalorganic chemical vapor deposition (MOCVD) grown InP on GaAs substrates by a more than two order of magnitude reduction in deep level concentration and an improvement in reverse bias leakage current by a factor of approx. 20. These results make plasma hydrogenation an extremely promising technique for achieving high efficiency large area and light weight heteroepitaxial InP solar cells for space applications. In this work we investigate the carrier trapping process by dislocations in heteroepitaxial InP/GaAs and the role of hydrogen passivation on this process. It is shown that the charge trapping kinetics of dislocations after hydrogen passivation are significantly altered, approaching point defect-like behavior consistent with a transformation from a high concentration of dislocation-related defect bands within the InP bandgap to a low concentration of individual deep levels after hydrogen passivation. It is further shown that the "apparent" activation energies of dislocation related deep levels, before and after passivation, reduce by approx. 70 meV as DLTS fill pulse times are increased from 1 usec. to 1 msec. A model is proposed which explains these effects based on a reduction of Coulombic interaction between individual core sites along the dislocation cores by hydrogen incorporation. Knowledge of the trapping properties in these specific structures is important to develop optimum, low loss heteroepitaxial InP cells.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Garimella, Sarvesh; Rothenberg, Daniel A.; Wolf, Martin J.

This study investigates the measurement of ice nucleating particle (INP) concentrations and sizing of crystals using continuous flow diffusion chambers (CFDCs). CFDCs have been deployed for decades to measure the formation of INPs under controlled humidity and temperature conditions in laboratory studies and by ambient aerosol populations. These measurements have, in turn, been used to construct parameterizations for use in models by relating the formation of ice crystals to state variables such as temperature and humidity as well as aerosol particle properties such as composition and number. We show here that assumptions of ideal instrument behavior are not supported by measurements mademore » with a commercially available CFDC, the SPectrometer for Ice Nucleation (SPIN), and the instrument on which it is based, the Zurich Ice Nucleation Chamber (ZINC). Non-ideal instrument behavior, which is likely inherent to varying degrees in all CFDCs, is caused by exposure of particles to different humidities and/or temperatures than predicated from instrument theory of operation. This can result in a systematic, and variable, underestimation of reported INP concentrations. Here we find here variable correction factors from 1.5 to 9.5, consistent with previous literature values. We use a machine learning approach to show that non-ideality is most likely due to small-scale flow features where the aerosols are combined with sheath flows. Machine learning is also used to minimize the uncertainty in measured INP concentrations. Finally, we suggest that detailed measurement, on an instrument-by-instrument basis, be performed to characterize this uncertainty.« less

Enhanced broadband absorption in nanowire arrays with integrated Bragg reflectors

NASA Astrophysics Data System (ADS)

Aghaeipour, Mahtab; Pettersson, Håkan

2018-05-01

A near-unity unselective absorption spectrum is desirable for high-performance photovoltaics. Nanowire (NW) arrays are promising candidates for efficient solar cells due to nanophotonic absorption resonances in the solar spectrum. The absorption spectra, however, display undesired dips between the resonance peaks. To achieve improved unselective broadband absorption, we propose to enclose distributed Bragg reflectors (DBRs) in the bottom and top parts of indium phosphide (InP) NWs, respectively. We theoretically show that by enclosing only two periods of In0.56Ga0.44As/InP DBRs, an unselective 78% absorption efficiency (72% for NWs without DBRs) is obtained at normal incidence in the spectral range from 300 nm to 920 nm. Under oblique light incidence, the absorption efficiency is enhanced up to about 85% at an incidence angle of 50°. By increasing the number of DBR periods from two to five, the absorption efficiency is further enhanced up to 95% at normal incidence. In this work, we calculated optical spectra for InP NWs, but the results are expected to be valid for other direct band gap III-V semiconductor materials. We believe that our proposed idea of integrating DBRs in NWs offers great potential for high-performance photovoltaic applications.

Using depolarization to quantify ice nucleating particle concentrations: a new method

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zenker, Jake; Collier, Kristen N.; Xu, Guanglang

We have developed a new method to determine ice nucleating particle (INP) concentrations observed by the Texas A&M University continuous flow diffusion chamber (CFDC) under a wide range of operating conditions. In this study, we evaluate differences in particle optical properties detected by the Cloud and Aerosol Spectrometer with POLarization (CASPOL) to differentiate between ice crystals, droplets, and aerosols. The depolarization signal from the CASPOL instrument is used to determine the occurrence of water droplet breakthrough (WDBT) conditions in the CFDC. The standard procedure for determining INP concentration is to count all particles that have grown beyond a nominal sizemore » cutoff as ice crystals. During WDBT this procedure overestimates INP concentration, because large droplets are miscounted as ice crystals. Here we design a new analysis method based on depolarization ratio that can extend the range of operating conditions of the CFDC. The method agrees reasonably well with the traditional method under non-WDBT conditions with a mean percent error of ±32.1 %. Additionally, a comparison with the Colorado State University CFDC shows that the new analysis method can be used reliably during WDBT conditions.« less

Using depolarization to quantify ice nucleating particle concentrations: a new method

DOE PAGES

Zenker, Jake; Collier, Kristen N.; Xu, Guanglang; ...

2017-12-01

We have developed a new method to determine ice nucleating particle (INP) concentrations observed by the Texas A&M University continuous flow diffusion chamber (CFDC) under a wide range of operating conditions. In this study, we evaluate differences in particle optical properties detected by the Cloud and Aerosol Spectrometer with POLarization (CASPOL) to differentiate between ice crystals, droplets, and aerosols. The depolarization signal from the CASPOL instrument is used to determine the occurrence of water droplet breakthrough (WDBT) conditions in the CFDC. The standard procedure for determining INP concentration is to count all particles that have grown beyond a nominal sizemore » cutoff as ice crystals. During WDBT this procedure overestimates INP concentration, because large droplets are miscounted as ice crystals. Here we design a new analysis method based on depolarization ratio that can extend the range of operating conditions of the CFDC. The method agrees reasonably well with the traditional method under non-WDBT conditions with a mean percent error of ±32.1 %. Additionally, a comparison with the Colorado State University CFDC shows that the new analysis method can be used reliably during WDBT conditions.« less

Proceedings of the 14Th Space Photovoltaic Research and Technology Conference (SPRAT 14)

NASA Technical Reports Server (NTRS)

Landis, Geoffrey (Compiler)

1995-01-01

The Fourteenth Space Photovoltaic Research and Technology conference was held at the NASA Lewis Research Center from October 24-26, 1995. The abstracts presented in this volume report substantial progress in a variety of areas in space photovoltaics. Technical and review papers were presented in many areas, including high efficiency GaAs and InP solar cells, GaAs/Ge cells as commercial items, high efficiency multiple bandgap cells, solar cell and array technology, heteroepitaxial cells, thermophotovoltaic energy conversion, and space radiation effects. Space flight data on a variety of cells were also presented.

Formation of VP-Zn complexes in bulk InP(Zn) by migration of P vacancies from the (110) surface

NASA Astrophysics Data System (ADS)

Slotte, J.; Saarinen, K.; Ebert, Ph.

2006-05-01

We apply a combination of positron annihilation spectroscopy and scanning tunneling microscopy to show that thermally generated P vacancies diffuse from the InP surface toward the bulk. The defect observed in the bulk can be identified as a complex consisting of a P vacancy and a Zn impurity. We infer that this pair is formed when the diffusing positive P vacancy is trapped at the Zn dopant. A rough estimate for the migration energy of the P vacancy results in a value of 1.3eV .

Development of high-performance GaInAsP solar cells for tandem solar cell applications

NASA Technical Reports Server (NTRS)

Wanlass, M. W.; Ward, J. S.; Gessert, T. A.; Emery, K. A.; Horner, G. S.

1990-01-01

Recent results in the development of high-efficiency, low-bandgap GaInAsP solar cells epitaxially grown and lattice matched on InP substrates are presented. Such cells are intended to be used as optimum bottom cell components in tandem solar cells. Assuming that a GaAs-based top cell is used, computer simulation of the potential bottom cell performance as a function of the cell bandgap and incident spectrum indicates that two particular alloys are desirable: Ga0.47In0.53As (Eg = 0.75 eV) for space applications and Ga0.25In0.75As0.54P0.46 (Eg = 0.95 eV) for terrestrial applications. In each of these materials, solar cells with new record-level efficiencies have been fabricated. The efficiency boost available to tandem configurations from these low-bandgap cells is discussed.

InGaAs/InP solar cells for space application

NASA Technical Reports Server (NTRS)

Karlina, L. B.; Kazantsev, A. B.; Kozlovskii, V. V.; Mokina, I. A.; Shvarts, M. Z.

1995-01-01

The effects of irradiation of In(0.53)Ga(0.47)As/InP (InGaAs/InP) solar cells illuminated through a transparent InP substrate with 1 MeV electrons were measured. These solar cells were developed for bottom cells in tandem solar photovoltaic cell structures. Some InGaAs/InP heterostructures with four layers were grown by liquid phase epitaxy. The structure of the solar cells allowed lightly doped materials in n and p photoactive layers to be used. The base dopant levels ranged from 1.10(exp 17) to 5.10(exp 17) cm(exp -3). The open circuit voltage and the short circuit current were moderately degraded after irradiation with 10(exp 16) cm(exp-2) 1 MeV electrons. This behavior is explained in terms of the device structure and the n and p layer thicknesses.

A combined kick-out and dissociative diffusion mechanism of grown-in Be in InGaAs and InGaAsP. A new finite difference-Bairstow method for solution of the diffusion equations

DOE Office of Scientific and Technical Information (OSTI.GOV)

Koumetz, Serge D., E-mail: Serge.Koumetz@univ-rouen.fr; Martin, Patrick; Murray, Hugues

Experimental results on the diffusion of grown-in beryllium (Be) in indium gallium arsenide (In{sub 0.53}Ga{sub 0.47}As) and indium gallium arsenide phosphide (In{sub 0.73}Ga{sub 0.27}As{sub 0.58}P{sub 0.42}) gas source molecular beam epitaxy alloys lattice-matched to indium phosphide (InP) can be successfully explained in terms of a combined kick-out and dissociative diffusion mechanism, involving neutral Be interstitials (Be{sub i}{sup 0}), singly positively charged gallium (Ga), indium (In) self-interstitials (I{sub III}{sup +}) and singly positively charged Ga, In vacancies (V{sub III}{sup +}). A new numerical method of solution to the system of diffusion equations, based on the finite difference approximations and Bairstow's method,more » is proposed.« less

An InP/Si heterojunction photodiode fabricated by self-aligned corrugated epitaxial lateral overgrowth

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sun, Y. T., E-mail: yasun@kth.se; Omanakuttan, G.; Lourdudoss, S.

2015-05-25

An n-InP/p-Si heterojunction photodiode fabricated by corrugated epitaxial lateral overgrowth (CELOG) method is presented. N-InP/p-Si heterojunction has been achieved from a suitable pattern containing circular shaped openings in a triangular lattice on the InP seed layer on p-Si substrate and subsequent CELOG of completely coalesced n-InP. To avoid current path through the seed layer in the final photodiode, semi-insulating InP:Fe was grown with adequate thickness prior to n-InP growth in a low pressure hydride vapor phase epitaxy reactor. The n-InP/p-Si heterointerface was analyzed by scanning electron microscopy and Raman spectroscopy. Room temperature cross-sectional photoluminescence (PL) mapping illustrates the defect reductionmore » effect in InP grown on Si by CELOG method. The InP PL intensity measured above the InP/Si heterojunction is comparable to that of InP grown on a native planar substrate indicating low interface defect density of CELOG InP despite of 8% lattice mismatch with Si. The processed n-InP/p-Si heterojunction photodiodes show diode characteristics from the current-voltage (I-V) measurements with a dark current density of 0.324 mA/cm{sup 2} at a reverse voltage of −1 V. Under the illumination of AM1.5 conditions, the InP/Si heterojunction photodiode exhibited photovoltaic effect with an open circuit voltage of 180 mV, a short circuit current density of 1.89 mA/cm{sup 2}, an external quantum efficiency of 4.3%, and an internal quantum efficiency of 6.4%. This demonstration of epitaxially grown InP/Si heterojunction photodiode will open the door for low cost and high efficiency solar cells and photonic integration of III-Vs on silicon.« less

Effects of plasma hydrogenation on trapping properties of dislocations in heteroepitaxial InP/GaAs

NASA Technical Reports Server (NTRS)

Ringel, S. A.; Chatterjee, B.

1994-01-01

In previous work, we have demonstrated the effectiveness of a post-growth hydrogen plasma treatment for passivating the electrical activity of dislocations in metalorganic chemical vapor deposition (MOCVD) grown InP on GaAs substrates by a more than two order of magnitude reduction in deep level concentration and an improvement in reverse bias leakage current by a factor of approximately 20. These results make plasma hydrogenation an extremely promising technique for achieving high efficiency large area and light weight heteroepitaxial InP solar cells for space applications. In this work we investigate the carrier trapping process by dislocations in heteroepitaxial InP/GaAs and the role of hydrogen passivation on this process. It is shown that the charge trapping kinetics of dislocations after hydrogen passivation are significantly altered, approaching point defect-like behavior consistent with a transformation from a high concentration of dislocation-related defect bands within the InP bandgap to a low concentration of individual dislocation related deep levels, before and after passivation. It is further shown that the 'apparent' activation energies of dislocation related deep levels, before and after passivation, reduce by approximately 70 meV as DLTS fill pulse times are increased from 1 microsecond to 1 millisecond. A model is proposed which explains these effects based on a reduction of Coulombic interaction between individual core sites along the dislocation cores by hydrogen incorporation. Knowledge of the trapping properties in these specific structures is important to develop optimum, low loss heteroepitaxial InP cells.

Iron incorporation in InP layers using a ferrocene source in atmospheric pressure MOVPE

NASA Astrophysics Data System (ADS)

Robein, D.; Kazmierski, C.; Pougnet, A. M.; Rose, B.

1991-02-01

Iron incorporation into InP has been studied using an AP MOVPE method. A very good control of the iron doping has been obtained with a ferrocene diffusion cell source. Semi-insulating material with a resistivity as a high as 5 × 10 8 Ω cm has been measured on n-SI-n diodes with iron-doped 1 mum thick layers. A compensation activity of iron near 100% has been found. An iron incorporation activition energy of 2.5 eV has been determined below the solubility limit. The iron concentration was found to be proportional to the gas-phase ferrocene concentration and to follow an inverse square-root law under increasing phosphine flow. In order to explain the observed phenomena, an incorporation mechanism model is developed assuming a two-phosphorus vacancy— substitutional iron complex as the incorporated species.

Hydrogen Passivation of Interstitial Zn Defects in Heteroepitaxial InP Cell Structures and Influence on Device Characteristics

NASA Technical Reports Server (NTRS)

Ringel, S. A.; Chatterjee, B.

2004-01-01

Hydrogen passivation of heteroepitaxial InP solar cells is of recent interest for deactivation of dislocations and other defects caused by the cell/substrate lattice mismatch that currently limit the photovoltaic performance of these devices. In this paper we present strong evidence that, in addition to direct hydrogen-dislocation interactions, hydrogen forms complexes with the high concentration of interstitial Zn defects present within the p(+) Zn-doped emitter of MOCVD-grown heteroepitaxial InP devices, resulting in a dramatic increase of the forward bias turn-on voltage by as much as 280 mV, from 680 mV to 960 mV. This shift is reproducible and thermally reversible and no such effect is observed for either n(+)p structures or homoepitaxial p(+)n structures grown under identical conditions. A combination of photoluminescence (PL), electrochemical C-V dopant profiling, SIMS and I-V measurements were performed on a set of samples having undergone a matrix of hydrogenation and post-hydrogenation annealing conditions to investigate the source of this voltage enhancement and confirm the expected role of interstitial Zn and hydrogen. A precise correlation between all measurements is demonstrated which indicates that Zn interstitials within the p(+) emitter and their interaction with hydrogen are indeed responsible for this device behavior.

InP shallow-homojunction solar cells

NASA Technical Reports Server (NTRS)

Keavney, Christopher; Spitzer, Mark B.; Vernon, Stanley M.; Haven, Victor E.; Augustine, Godfrey

1989-01-01

Indium phosphide solar cells with very thin n-type emitters have been made by both ion implantation and metalorganic chemical vapor deposition. Air mass zero efficiencies as high as 18.8 percent (NASA measurement) have been achieved. Although calculations show that, as is the case with GaAs, a heterostructure is expected to be required for the highest efficiencies attainable, the material properties of InP give the shallow-homojunction structure a greater potential than in the case of GaAs. The best cells, which were those made by ion implantation, show open-circuit voltage (V sub oc) of 873 mV, short-circuit current of 357 A/sq m (35.7 mA/sq cm), and fill factor of 0.829. Improvements are anticipated in all three of these parameters. Internal quantum efficiency peaks at over 90 percent in the red end of the spectrum, but drops to 54 percent in the blue end. Other cells have achieved 74 percent in the blue end. Detailed modeling of the data indicates that a high front surface recombination velocity is responsible for the low blue response, that the carrier lifetime is high enough to allow good carrier collection from both the base and the emitter, and that the voltage is base-limited.

Potential high efficiency solar cells: Applications from space photovoltaic research

NASA Technical Reports Server (NTRS)

Flood, D. J.

1986-01-01

NASA involvement in photovoltaic energy conversion research development and applications spans over two decades of continuous progress. Solar cell research and development programs conducted by the Lewis Research Center's Photovoltaic Branch have produced a sound technology base not only for the space program, but for terrestrial applications as well. The fundamental goals which have guided the NASA photovoltaic program are to improve the efficiency and lifetime, and to reduce the mass and cost of photovoltaic energy conversion devices and arrays for use in space. The major efforts in the current Lewis program are on high efficiency, single crystal GaAs planar and concentrator cells, radiation hard InP cells, and superlattice solar cells. A brief historical perspective of accomplishments in high efficiency space solar cells will be given, and current work in all of the above categories will be described. The applicability of space cell research and technology to terrestrial photovoltaics will be discussed.

Ice nucleating particles from a large-scale sampling network: insight into geographic and temporal variability

NASA Astrophysics Data System (ADS)

Schrod, Jann; Weber, Daniel; Thomson, Erik S.; Pöhlker, Christopher; Saturno, Jorge; Artaxo, Paulo; Curtius, Joachim; Bingemer, Heinz

2017-04-01

The number concentration of ice nucleating particles (INP) is an important, yet under quantified atmospheric parameter. The temporal and geographic extent of observations worldwide remains relatively small, with many regions of the world (even whole continents and oceans), almost completely unrepresented by observational data. Measurements at pristine sites are particularly rare, but all the more valuable because such observations are necessary to estimate the pre-industrial baseline of aerosol and cloud related parameters that are needed to better understand the climate system and forecast future scenarios. As a partner of BACCHUS we began in September 2014 to operate an INP measurement network of four sampling stations, with a global geographic distribution. The stations are located at unique sites reaching from the Arctic to the equator: the Amazonian Tall Tower Observatory ATTO in Brazil, the Observatoire Volcanologique et Sismologique on the island of Martinique in the Caribbean Sea, the Zeppelin Observatory at Svalbard in the Norwegian Arctic and the Taunus Observatory near Frankfurt, Germany. Since 2014 samples were collected regularly by electrostatic precipitation of aerosol particles onto silicon substrates. The INP on the substrate are activated and analyzed in the isothermal static diffusion chamber FRIDGE at temperatures between -20°C and -30°C and relative humidity with respect to ice from 115 to 135%. Here we present data from the years 2015 and 2016 from this novel INP network and from selected campaign-based measurements from remote sites, including the Mt. Kenya GAW station. Acknowledgements The research leading to these results has received funding from the European Union's Seventh Framework Programme (FP7/2007-2013) project BACCHUS under grant agreement No 603445 and the Deutsche Forschungsgemeinschaft (DFG) under the Research Unit FOR 1525 (INUIT).

A review of indium phosphide space solar cell fabrication technology

NASA Technical Reports Server (NTRS)

Spitzer, M. B.; Dingle, B.; Dingle, J.; Morrison, R.

1990-01-01

A review of the status of InP cell efficiency and of approaches to the reduction of cell cost is presented. The use of heteroepitaxial techniques such as InP-on-GaAs and InP-on-Si is discussed along with the use of chemical and mechanical techniques for removal and recovery of the substrate. The efficiency ultimately obtainable with designs made possible by such an approach is calculated.

Influence of Diffused Solar Radiation on the Solar Concentrating System of a Plant Shoot Configuration

NASA Astrophysics Data System (ADS)

Obara, Shin'ya

Investigation of a plant shoot configuration is used to obtain valuable information concerning the received light system. Additionally, analysis results concerning a plant shoot configuration interaction with direct solar radiation were taken from a past study. However, in order to consider a plant shoot as a received sunlight system, it is necessary to understand the received light characteristics of both direct solar radiation and diffused solar radiation. Under a clear sky, the ratio of direct solar radiation to diffused solar radiation is large. However, under a clouded sky, the amount of diffused solar radiation becomes larger. Therefore, in this paper, we investigate the received light characteristics of a plant shoot configuration under the influence of diffused solar radiation. As a result, we clarify the relationship between the amount of diffused solar radiation and the amount of received light as a function of the characteristics of the plant shoot configuration. In order to obtain diffused solar radiation, it is necessary to correspond to the radiation of the multi-directions. In the analysis, the characteristic of the difference in arrangement of the top leaf and the other leaf was obtained. Therefore, in analysis, leaves other than the top were distributed in the wide range.

Method of forming thermally stable high-resistivity regions in n-type indium phosphide by oxygen implantation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Thompson, P.E.; Dietrich, H.B.

1985-12-12

Objects of this invention are: to form high-temperature stable isolation regions in InP; to provide InP wafers that allow greater flexibility in the design and fabrication of discrete devices; to provide new and improved InP semiconductor devices in n-type InP; to provide high-resisitivity isolation regions in InP; to extend the usefulness of damage-induced isolation in n-type InP by making possible processes in which the isolation implantation precedes the alloying of ohmic contacts; and to provide n-type InP substrates without unwanted conductive layers. The above and other object are realized by an InP wafer comprising a S.I. InP substrate; a n-typemore » InP active layer disposed on the substrate; and oxygen ion implanted isolation regions disposed in the active layer. The S.I. InP dopant may comprise either Fe or Cr.« less

Transport Imaging of Multi-Junction and CIGS Solar Cell Materials

DTIC Science & Technology

2011-12-01

solar cells start with the material charge transport parameters, namely the charge mobility, lifetime and diffusion length . It is the goal of...every solar cell manufacturer to maintain high carrier lifetime so as to realize long diffusion lengths . Long diffusion lengths ensure that the charges...Thus, being able to accurately determine the diffusion length of any solar cell material proves advantageous by providing insights

Self-organizing nanodot structures on InP surfaces evolving under low-energy ion irradiation: analysis of morphology and composition.

PubMed

Radny, Tobias; Gnaser, Hubert

2014-01-01

Surfaces of InP were bombarded by 1.9 keV Ar(+) ions under normal incidence. The total accumulated ion fluence Φ the samples were exposed to was varied from 1 × 10(17) cm(-2) to 3 × 10(18) cm(-2), and ion fluxes f of (0.4 - 2) × 10(14) cm(-2) s(-1) were used. The surface morphology resulting from these ion irradiations was examined by atomic force microscopy (AFM). Generally, nanodot structures are formed on the surface; their dimensions (diameter, height and separation), however, were found to depend critically on the specific bombardment conditions. As a function of ion fluence, the mean radius r, height h, and spacing l of the dots can be fitted by power-law dependences: r ∝ Φ(0.40), h ∝ Φ(0.48), and l ∝ Φ(0.19). In terms of ion flux, there appears to exist a distinct threshold: below f ~ (1.3 ± 0.2) × 10(14) cm(-2) s(-1), no ordering of the dots exists and their size is comparatively small; above that value of f, the height and radius of the dots becomes substantially larger (h ~ 40 nm and r ~ 50 nm). This finding possibly indicates that surface diffusion processes could be important. In order to determine possible local compositional changes in these nanostructures induced by ion impact, selected samples were prepared for atom probe tomography (APT). The results indicate that APT can provide analytical information on the composition of individual InP nanodots. By means of 3D APT data, the surface region of such nanodots evolving under ion bombardment could be examined with atomic spatial resolution. At the InP surface, the values of the In/P concentration ratio are distinctly higher over a distance of approximately 1 nm and amount to 1.3 to 1.7.

Evidence for a Biological Control on Emissions of Marine Ice Nucleating Particles: Laboratory, Field and Modeling Results

NASA Astrophysics Data System (ADS)

McCluskey, Christina Song

Laboratory, field, and modeling studies were used to (1) confirm the hypothesized source of marine ice nucleating particle (INP) emissions associated with marine organic aerosol that arises from elevated oceanic biological productivity; (2) identify marine INP compositions and their activation temperatures; (3) determine the natural abundances and variability of the number concentrations of marine INPs (nINPs); and (4) evaluate the current best model estimates of marine INPs against new observations. Observations of seawater biology, aerosol composition and ice nucleation ability of bulk seawater, the sea surface microlayer (upper 50 mum of the ocean surface), and laboratory-generated sea spray aerosol (SSA) during simulated phytoplankton blooms revealed that emissions of INPs active at temperatures warmer than -22°C increased during the decay of two phytoplankton blooms. Enrichment of organic matter in the sea surface microlayer and its subsequent control on transferring organic material into the aerosol phase was found to be an important factor in the release of INPs from the ocean surface. Integration of all size and compositional analyses led to two proposed classes of marine INPs: (A) ice nucleation active molecules and (B) ice nucleation active intact or fragmented microbes (e.g., diatoms or bacteria). To investigate marine INPs present in nature, several field campaigns were carried out over oceans and at two remote coastal sites. Regarding their abundance and variability, the number concentrations of ice nucleating particles, nINPs, active at temperatures warmer than -30 °C, ranged over three or more orders of magnitude at any particular temperature for samples collected in the marine boundary layer during six research voyages over the Pacific Ocean, spanning 70°S to 60°N over various seasons. nINPs were greater and more variable in the Northern Hemisphere compared to the Southern Hemisphere. Factors that contributed to this variability were investigated in detail at a North Atlantic Ocean coastal site (Mace Head Research Station, MHD) and over the Southern Ocean (SO). At MHD, normalizing observations by aerosol surface area and limiting measurements to pristine marine air masses narrowed the variability in nINPs. That subset of data was used to develop a parameterization for INPs in pristine sea spray organic aerosol over the North Atlantic Ocean. Higher n INPs active at temperatures warmer than -22°C were observed in pristine SSA during a period that was influenced by organic aerosol arising from offshore biological activity. The INPs observed during this event comprised ice nucleation active microbes (marine INP class B), which were distinct from other marine organic INPs at MHD. These observations indicate that further research is required to incorporate the microbe INP type into parameterizations. Measurements of INPs in the SO marine boundary layer aerosol and in seawater samples were the first in this region in over four decades. Observed nINPs were a factor of 100 lower than those historical measurements. nINPs observed over the SO were less variable than MHD and INP composition included refractory, heat-stable organic (marine INP class A), and heat-labile materials (marine INP class B). These data serve as new observational constraints on nINPs and their sources and compositions that can be applied to evaluate numerical modeling studies. The database from this work was used in an exploratory study to evaluate current modeling approaches for predicting marine INPs. Simulations with the atmospheric component (CAM5) of the Department of Energy Community Earth System Model with implementation of a physically-based parameterization for sea spray organic aerosol were conducted for the MHD and SO study periods. Modeled aerosol mass, number and composition were used as input for two marine INP parameterizations that have been developed since the beginning of this work (circa 2014). Findings indicated that, for INPs active at -15°C during the MHD study period, observed nINPs were bounded by estimates derived from the two marine INP parameterizations. Periods with discrepancies between modeled estimates and observed nINPs were explained by observational evidence that different classes of marine INPs were present at MHD, further supporting the need for additional studies regarding the emissions of different marine INP classes. Different INP types (e.g., marine organic, mineral dust) are active at different temperatures and the observations from this work clearly indicate that organic aerosol is an important factor for determining marine nINPs. Thus, further evaluation of these parameterizations for INPs active at a range of temperatures (0 to -27°C) and against measurements over the Southern Ocean, where sea spray organic aerosol production may be quite different from other regions, will be conducted in the future with these simulations. This deeper analysis may reveal underlying limitations of the parameterizations and provide insights on how to further refine numerical representations of INPs. (Abstract shortened by ProQuest.).

Glass diffusion source for constraining BSF region of a solar cell

DOEpatents

Lesk, I.A.; Pryor, R.A.; Coleman, M.G.

1982-08-27

The present invention is directed to a method of fabricating a solar cell comprising simultaneous diffusion of the p and n dopant materials into the solar cell substrate. The simultaneous diffusion process is preceded by deposition of a capping layer impervious to doping by thermal diffusion processes.

Development of a unique laboratory standard: Indium gallium arsenide detector for the 500-1700 nm spectral region

NASA Technical Reports Server (NTRS)

1987-01-01

A planar (5 mm diameter) indium gallium arsenide detector having a high (greater than 50 pct) quantum efficiency from the visible into the infrared spectrum (500 to 1700 nm) was fabricated. Quantum efficiencies as high as 37 pct at 510 nm, 58 pct at 820 nm and 62 pct at 1300 nm and 1550 nm were measured. A planar InP/InGaAs detector structure was also fabricated using vapor phase epitaxy to grow device structures with 0, 0.2, 0.4 and 0.6 micrometer thick InP caps. Quantum efficiency was studied as a function of cap thickness. Conventional detector structures were also used by completely etching off the InP cap after zinc diffusion. Calibrated quantum efficiencies were measured. Best results were obtained with devices whose caps were completely removed by etching. Certain problems still remain with these detectors including non-uniform shunt resistance, reproducibility, contact resistance and narrow band anti-reflection coatings.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Garimella, Sarvesh; Kristensen, Thomas Bjerring; Ignatius, Karolina

The SPectrometer for Ice Nuclei (SPIN) is a commercially available ice nucleating particle (INP) counter manufactured by Droplet Measurement Technologies in Boulder, CO. The SPIN is a continuous flow diffusion chamber with parallel plate geometry based on the Zurich Ice Nucleation Chamber and the Portable Ice Nucleation Chamber. This study presents a standard description for using the SPIN instrument and also highlights methods to analyze measurements in more advanced ways. It characterizes and describes the behavior of the SPIN chamber, reports data from laboratory measurements, and quantifies uncertainties associated with the measurements. Experiments with ammonium sulfate are used to investigatemore » homogeneous freezing of deliquesced haze droplets and droplet breakthrough. Experiments with kaolinite, NX illite, and silver iodide are used to investigate heterogeneous ice nucleation. SPIN nucleation results are compared to those from the literature. A machine learning approach for analyzing depolarization data from the SPIN optical particle counter is also presented (as an advanced use). Altogether, we report that the SPIN is able to reproduce previous INP counter measurements.« less

MODIS Solar Diffuser Attenuation Screen Modeling Results

NASA Technical Reports Server (NTRS)

Waluschka, Eugene; Xuong, Xiaoxiong; Guenther, Bruce; Barnes, William

2004-01-01

On-orbit calibration of the reflected solar bands on the EOS Moderate Resolution Imaging Spectroradiometer (MODIS) is accomplished by have the instrument view a high reflectance diffuse surface illuminated by the sun. For some of the spectral bands this proves to be much too bright a signal that results in the saturation of detectors designed for measuring low reflectance (ocean) surfaces signals. A mechanical attenuation device in the form of a pin hole screen is used to reduce the signals to calibrate these bands. The sensor response to solar illumination of the SD with and without the attenuation screen in place will be presented. The MODIS detector response to the solar diffuser is smooth when the attenuation screen is absent, but has structures up to a few percent when the attenuation screen is present. This structure corresponds to non-uniform illumination from the solar diffuser. Each pin hole produces a pin-hole image of the sun on the solar diffuser, and there are very many pin hole images of the sun on the solar diffuser for each MODIS detector. Even though there are very many pin-hole images of the sun on the solar diffuser, it is no longer perfectly uniformly illuminated. This non-uniformly illuminated solar diffuser produces intensity variation on the focal planes. The results of a very detailed simulation will be discussed which show how the illumination of the focal plane changes as a result of the attenuation, and the impacts on the calibration will be discussed.

Single-crystalline cubic structured InP nanosprings

NASA Astrophysics Data System (ADS)

Shen, G. Z.; Bando, Y.; Zhi, C. Y.; Yuan, X. L.; Sekiguchi, T.; Golberg, D.

2006-06-01

Cubic structured nanosprings, InP nanosprings, have been synthesized via a simple thermochemical process using InP and ZnS as the source materials. Each InP nanospring is formed by rolling up a single InP nanobelt with the growth direction along the ⟨111⟩ orientation. The formation of these novel nanostructures is mainly attributed to the minimization of the electrostatic energy due to the polar charges on the ±(002) side surfaces of cubic InP. Cathodoluminescence properties were also studied, which reveal that the InP nanosprings have three emission bands centered at ˜736, ˜920, and ˜980nm.

Use of Advanced Solar Cells for Commercial Communication Satellites

NASA Technical Reports Server (NTRS)

Bailey, Sheila G.; Landis, Geoffrey A.

1995-01-01

The current generation of communications satellites are located primarily in geosynchronous Earth orbit (GEO). Over the next decade, however, a new generation of communications satellites will be built and launched, designed to provide a world-wide interconnection of portable telephones. For this mission, the satellites must be positioned in lower polar and near-polar orbits. To provide complete coverage, large numbers of satellites will be required. Because the required number of satellites decreases as the orbital altitude is increased, fewer satellites would be required if the orbit chosen were raised from low to intermediate orbit. However, in intermediate orbits, satellites encounter significant radiation due to trapped electrons and protons. Radiation tolerant solar cells may be necessary to make such satellites feasible. We analyze the amount of radiation encountered in low and intermediate polar orbits at altitudes of interest to next-generation communication satellites, calculate the expected degradation for silicon, GaAs, and InP solar cells, and show that the lifetimes can be significantly increased by use of advanced solar cells.

Use of advanced solar cells for commerical communication satellites

NASA Astrophysics Data System (ADS)

Landis, Geoffrey A.; Bailey, Sheila G.

1995-01-01

The current generation of communications satellites are located primarily in geosynchronous Earth orbit (GEO). Over the next decade, however, a new generation of communications satellites will be built and launched, designed to provide a world-wide interconnection of portable telephones. For this mission, the satellites must be positioned in lower polar- and near-polar orbits. To provide complete coverage, large numbers of satellites will be required. Because of the required number of satellites decreases as the orbital altitude is increased, fewer satellites would be required if the orbit chosen were raised from Low to intermediate orbit. However, in intermediate orbits, satellites encounter significant radiation due to trapped electrons and protons. Radiation tolerant solar cells may be necessary to make such satellites feasible. We analyze the amount of radiation encountered in low and intermediate polar orbits at altitudes of interest to next-generation communication satellites, calculate the expected degradation for silicon, GaAs, and InP solar cells, and show that the lifetimes can be significantly increased by use of advanced solar cells.

Use of advanced solar cells for commercial communication satellites

NASA Astrophysics Data System (ADS)

Bailey, Sheila G.; Landis, Geoffrey A.

1995-03-01

The current generation of communications satellites are located primarily in geosynchronous Earth orbit (GEO). Over the next decade, however, a new generation of communications satellites will be built and launched, designed to provide a world-wide interconnection of portable telephones. For this mission, the satellites must be positioned in lower polar and near-polar orbits. To provide complete coverage, large numbers of satellites will be required. Because the required number of satellites decreases as the orbital altitude is increased, fewer satellites would be required if the orbit chosen were raised from low to intermediate orbit. However, in intermediate orbits, satellites encounter significant radiation due to trapped electrons and protons. Radiation tolerant solar cells may be necessary to make such satellites feasible. We analyze the amount of radiation encountered in low and intermediate polar orbits at altitudes of interest to next-generation communication satellites, calculate the expected degradation for silicon, GaAs, and InP solar cells, and show that the lifetimes can be significantly increased by use of advanced solar cells.

Electron and proton damage on InGaAs solar cells having an InP window layer

NASA Technical Reports Server (NTRS)

Messenger, Scott R.; Cotal, Hector L.; Walters, Robert J.; Summers, Geoffrey P.

1995-01-01

As part of a continuing program to determine the space radiation resistance of InP/ln(0.53)Ga(0.47)As tandem solar cells, n/p In(0.53)Ga(0. 47)As solar cells fabricated by RTI were irradiated with 1 MeV electrons and with 3 MeV protons. The cells were grown with a 3 micron n-lnP window layer to mimic the top cell in the tandem cell configuration for both AMO solar absorption and radiation effects. The results have been plotted against 'displacement damage dose' which is the product of the nonionizing energy loss (NIEL) and the particle fluence. A characteristic radiation damage curve can then be obtained for predicting the effect of all particles and energies. AMO, 1 sun solar illumination IV measurements were performed on the irradiated InGaAs solar cells and a characteristic radiation degradation curve was obtained using the solar cell conversion efficiency as the model parameter. Also presented are data comparing the radiation response of both n/p and p/n (fabricated by NREL) InGaAs solar cells as a function of base doping concentration. For the solar cell efficiency, the radiation degradation was found to be independent of the sample polarity for the same base doping concentration.

Nickel-Phosphorous Development for Total Solar Irradiance Measurement

NASA Astrophysics Data System (ADS)

Carlesso, F.; Berni, L. A.; Vieira, L. E. A.; Savonov, G. S.; Nishimori, M.; Dal Lago, A.; Miranda, E.

2017-10-01

The development of an absolute radiometer instrument is currently a effort at INPE for TSI measurements. In this work, we describe the development of black Ni-P coatings for TSI radiometers absorptive cavities. We present a study of the surface blackening process and the relationships between morphological structure, chemical composition and coating absorption. Ni-P deposits with different phosphorous content were obtained by electroless techniques on aluminum substrates with a thin zincate layer. Appropriate phosphorus composition and etching parameters process produce low reflectance black coatings.

SeaWiFS long-term solar diffuser reflectance trend analysis

NASA Astrophysics Data System (ADS)

Eplee, Robert E., Jr.; Patt, Frederick S.; Barnes, Robert A.; McClain, Charles R.

2006-08-01

The NASA Ocean Biology Processing Group's Calibration and Validation (Cal/Val) Team implemented daily solar calibrations of SeaWiFS to look for step-function changes in the instrument response and has used these calibrations to supplement the monthly lunar calibrations in monitoring the radiometric stability of SeaWiFS during its first year of on-orbit operations. The Team has undertaken an analysis of the mission-long solar calibration time series, with the lunar-derived radiometric corrections over time applied, to assess the long-term degradation of the solar diffuser reflectance over nine years on orbit. The SeaWiFS diffuser is an aluminum plate coated with YB71 paint. The bidirectional reflectance distribution function of the diffuser was not fully characterized before launch, so the Cal/Val Team has implemented a regression of the solar incidence angles and the drift in the node of the satellite's orbit against the diffuser time series to correct for solar incidence angle effects. An exponential function with a time constant of 200 days yields the best fit to the diffuser time series. The decrease in diffuser reflectance over the mission is wavelength-dependent, ranging from 9% in the blue (412 nm) to 5% in the red and near infrared (670-865 nm). The degradation of diffuser reflctance is similar to that observed for SeaWiFS radiometric response itself from lunar calibration time series for bands 1-5 (412-555 nm), though the magnitude of the change is four times larger for the diffuser. Evidently, the same optical degradation process has affected both the telescope optics and the solar diffuser in the blue and green. The Cal/Val Team has developed a methodology for computing the signal-to-noise ratio (SNR) for SeaWiFS on orbit from the diffuser time series. The on-orbit change in the SNR for each band over the nine-year mission is less than 7%. The on-orbit performance of the SeaWiFS solar diffuser should offer insight into the long-term on-orbit performance of solar diffusers on other instruments, such as MODIS, VIIRS, and ABI.

Discrete Optimization in Chemical Space Reference Manual

DTIC Science & Technology

2012-10-01

ChemGroup . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 346 6.3 vanilla -rings.inp...Examples: carbazoles.inp, and vanilla -rings.inp. 4.8.2 Constructor & Destructor Documentation 4.8.2.1 ChemGroup::ChemGroup () 4.8.2.2 ChemGroup::ChemGroup...also: carbazoles.inp and vanilla -rings.inp in the examples section. Read the connector. Read the connector. 4.9.2.6 ChemIdent::ChemIdent (istream & in

TP53INP1 is a novel p73 target gene that induces cell cycle arrest and cell death by modulating p73 transcriptional activity.

PubMed

Tomasini, Richard; Seux, Mylène; Nowak, Jonathan; Bontemps, Caroline; Carrier, Alice; Dagorn, Jean-Charles; Pébusque, Marie-Josèphe; Iovanna, Juan L; Dusetti, Nelson J

2005-12-08

TP53INP1 is an alternatively spliced gene encoding two nuclear protein isoforms (TP53INP1alpha and TP53INP1beta), whose transcription is activated by p53. When overexpressed, both isoforms induce cell cycle arrest in G1 and enhance p53-mediated apoptosis. TP53INP1s also interact with the p53 gene and regulate p53 transcriptional activity. We report here that TP53INP1 expression is induced during experimental acute pancreatitis in p53-/- mice and in cisplatin-treated p53-/- mouse embryo fibroblasts (MEFs). We demonstrate that ectopic expression of p73, a p53 homologue, leads to TP53INP1 induction in p53-deficient cells. In turn, TP53INP1s alters the transactivation capacity of p73 on several p53-target genes, including TP53INP1 itself, demonstrating a functional association between p73 and TP53INP1s. Also, when overexpressed in p53-deficient cells, TP53INP1s inhibit cell growth and promote cell death as assessed by cell cycle analysis and colony formation assays. Finally, we show that TP53INP1s potentiate the capacity of p73 to inhibit cell growth, that effect being prevented when the p53 mutant R175H is expressed or when p73 expression is blocked by a siRNA. These results suggest that TP53INP1s are functionally associated with p73 to regulate cell cycle progression and apoptosis, independently from p53.

Intraoperative clinical assessment and pressure measurements of sentinel lymph nodes in breast cancer.

PubMed

Nathanson, S David; Shah, Rupen; Chitale, Dhananjay A; Mahan, Meredith

2014-01-01

Clinicians have long regarded firm enlarged axillary nodes as suspicious for metastasis, and this has been confirmed to represent increased pressure in sentinel lymph nodes (SLN) in vivo in breast cancer. We hypothesized that measuring intranodal pressure (INP) in the operating room would correlate with metastasis size and be more sensitive than clinical observation. Intranodal pressure mmHg was measured in SLNs #1 and #2 (N = 134 and 32) in 122 patients with T1/2 cN0 and 6 controls (T0) (8 bilateral). Clinical "Level of Suspicion" (LOS) was: 0 = benign; 1 = slightly suspicious; 2 = obvious metastasis. Statistical analysis was performed to compare INP, LOS, and SLN metastasis size mm. Sentinel lymph nodes met size correlated with INP (r = 0.65; p < 0.001). INP was 22.0 ± 1.3 mmHg in 35 SLNs with metastases compared with 9.3 ± 0.7 mmHg in 132 without (p < 0.001). Six groups created by combining LOS 0, 1, and 2 with INP >17 or ≤17 mmHg showed a significant (p < 0.001) correlation with SLN histology; sensitivity and specificity for LOS = 2/INP >17 mmHg = 100 % at predicting metastases; LOS = 0/INP ≤17 mmHg most often correct at predicting negative nodes (sensitivity 50 %, specificity 92.9 %, positive predictive value 55 %, negative predictive value 90.7 %). INP was better than LOS at predicting positive nodes in eight patients where INP was >17 mmHg. INP and LOS correlated significantly (p < 0.001). Clinical suspicion of metastasis correlated well with INP particularly at predicting macrometastases. INP was slightly better at predicting micrometastases. Measurement of INP may be valuable adjunct when performing SLN biopsy when further axillary surgery is contemplated.

Brazilian Decimetre Array (Phase-1): Initial solar observations

NASA Astrophysics Data System (ADS)

Ramesh, R.; Sawant, H. S.; Cecatto, J. R.; Faria, C.; Fernandes, F. C. R.; Kathiravan, C.; Suryanarayana, G. S.

An East-West one-dimensional radio interferometer array consisting of 5 parabolic dish antennas has been set-up at Cachoeira Paulista, Brazil (Longitude: 45°0'20″W, Latitude: 22°41'19″S) for observations of Sun and some of the strong sidereal sources by the Instituto Nacional de Pesquisas Espaciais (INPE), Brazil. This is Phase-1 of the proposed Brazilian Decimetre Array (BDA) and can be operated at any frequency in the range 1.2-1.7 GHz. The instrument is functional since November 2004 onwards at 1.6 GHz. The angular and temporal resolution at the above frequency range are ˜3' and 100 ms, respectively. We present here the initial solar observations carried out with this array.

Correlation of total, diffuse, and direct solar radiation

NASA Technical Reports Server (NTRS)

Buyco, E. H.; Namkoong, D.

1977-01-01

Present requirements for realistic solar energy system evaluations necessitate a comprehensive body of solar-radition data. The data should include both diffuse and direct solar radiation as well as their total on an hourly (or shorter) basis. In general, however, only the total solar radiation values were recorded. This report presents a correlation that relates the diffuse component of an hourly total solar radiation value to the total radiation ratio of the maximum value attainable. The data used were taken at the Blue Hill Observatory in Milton, Massachusetts, for the period 1952. The relation - in the form of the data plots - can be used in situations in which only the hourly total radiation data are available but the diffuse component is desired.

InP/ZnSe/ZnS core-multishell quantum dots for improved luminescence efficiency

NASA Astrophysics Data System (ADS)

Greco, Tonino; Ippen, Christian; Wedel, Armin

2012-04-01

Semiconductor quantum dots (QDs) exhibit unique optical properties like size-tunable emission color, narrow emission peak, and high luminescence efficiency. QDs are therefore investigated towards their application in light-emitting devices (QLEDs), solar cells, and for bio-imaging purposes. In most cases QDs made from cadmium compounds like CdS, CdSe or CdTe are studied because of their facile and reliable synthesis. However, due to the toxicity of Cd compounds and the corresponding regulation (e.g. RoHS directive in Europe) these materials are not feasible for customer applications. Indium phosphide is considered to be the most promising alternative because of the similar band gap (InP 1.35 eV, CdSe 1.73 eV). InP QDs do not yet reach the quality of CdSe QDs, especially in terms of photoluminescence quantum yield and peak width. Typically, QDs are coated with another semiconductor material of wider band gap, often ZnS, to passivate surface defects and thus improve luminescence efficiency. Concerning CdSe QDs, multishell coatings like CdSe/CdS/ZnS or CdSe/ZnSe/ZnS have been shown to be advantageous due to the improved compatibility of lattice constants. Here we present a method to improve the luminescence efficiency of InP QDs by coating a ZnSe/ZnS multishell instead of a ZnS single shell. ZnSe exhibits an intermediate lattice constant of 5.67 Å between those of InP (5.87 Å) and ZnS (5.41 Å) and thus acts as a wetting layer. As a result, InP/ZnSe/ZnS is introduced as a new core-shell quantum dot material which shows improved photoluminescence quantum yield (up to 75 %) compared to the conventional InP/ZnS system.

The Drosophila Sp8 transcription factor Buttonhead prevents premature differentiation of intermediate neural progenitors

PubMed Central

Xie, Yonggang; Li, Xiaosu; Zhang, Xian; Mei, Shaolin; Li, Hongyu; Urso, Andreacarola; Zhu, Sijun

2014-01-01

Intermediate neural progenitor cells (INPs) need to avoid differentiation and cell cycle exit while maintaining restricted developmental potential, but mechanisms preventing differentiation and cell cycle exit of INPs are not well understood. In this study, we report that the Drosophila homolog of mammalian Sp8 transcription factor Buttonhead (Btd) prevents premature differentiation and cell cycle exit of INPs in Drosophila larval type II neuroblast (NB) lineages. We show that the loss of Btd leads to elimination of mature INPs due to premature differentiation of INPs into terminally dividing ganglion mother cells. We provide evidence to demonstrate that Btd prevents the premature differentiation by suppressing the expression of the homeodomain protein Prospero in immature INPs. We further show that Btd functions cooperatively with the Ets transcription factor Pointed P1 to promote the generation of INPs. Thus, our work reveals a critical mechanism that prevents premature differentiation and cell cycle exit of Drosophila INPs. DOI: http://dx.doi.org/10.7554/eLife.03596.001 PMID:25285448

Application of an online-coupled regional climate model, WRF-CAM5, over East Asia for examination of ice nucleation schemes. Part II. Sensitivity to heterogeneous ice nucleation parameterizations and dust emissions

DOE PAGES

Zhang, Yang; Chen, Ying; Fan, Jiwen; ...

2015-09-14

Aerosol particles can affect cloud microphysical properties by serving as ice nuclei (IN). Large uncertainties exist in the ice nucleation parameterizations (INPs) used in current climate models. In this Part II paper, to examine the sensitivity of the model predictions to different heterogeneous INPs, WRF-CAM5 simulation using the INP of Niemand et al. (N12) [1] is conducted over East Asia for two full years, 2006 and 2011, and compared with simulation using the INP of Meyers et al. (M92) [2], which is the original INP used in CAM5. M92 calculates the nucleated ice particle concentration as a function of icemore » supersaturation, while N12 represents the nucleated ice particle concentration as a function of temperature and the number concentrations and surface areas of dust particles. Compared to M92, the WRF-CAM5 simulation with N12 produces significantly higher nucleated ice crystal number concentrations (ICNCs) in the northern domain where dust sources are located, leading to significantly higher cloud ice number and mass concentrations and ice water path, but the opposite is true in the southern domain where temperatures and moistures play a more important role in ice formation. Overall, the simulation with N12 gives lower downward shortwave radiation but higher downward longwave radiation, cloud liquid water path, cloud droplet number concentrations, and cloud optical depth. The increase in cloud optical depth and the decrease in downward solar flux result in a stronger shortwave and longwave cloud forcing, and decreases temperature at 2-m and precipitation. Changes in temperature and radiation lower surface concentrations of OH, O₃, SO₄²⁻, and PM 2.5, but increase surface concentrations of CO, NO₂, and SO₂ over most of the domain. By acting as cloud condensation nuclei (CCN) and IN, dust particles have different impacts on cloud water and ice number concentrations, radiation, and temperature at 2-m and precipitation depending on whether the dominant role of dust is CCN or IN. These results indicate the importance of the heterogeneous ice nucleation treatments and dust emissions in accurately simulating regional climate and air quality.« less

Application of an online-coupled regional climate model, WRF-CAM5, over East Asia for examination of ice nucleation schemes. Part II. Sensitivity to heterogeneous ice nucleation parameterizations and dust emissions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Yang; Chen, Ying; Fan, Jiwen

Aerosol particles can affect cloud microphysical properties by serving as ice nuclei (IN). Large uncertainties exist in the ice nucleation parameterizations (INPs) used in current climate models. In this Part II paper, to examine the sensitivity of the model predictions to different heterogeneous INPs, WRF-CAM5 simulation using the INP of Niemand et al. (N12) [1] is conducted over East Asia for two full years, 2006 and 2011, and compared with simulation using the INP of Meyers et al. (M92) [2], which is the original INP used in CAM5. M92 calculates the nucleated ice particle concentration as a function of icemore » supersaturation, while N12 represents the nucleated ice particle concentration as a function of temperature and the number concentrations and surface areas of dust particles. Compared to M92, the WRF-CAM5 simulation with N12 produces significantly higher nucleated ice crystal number concentrations (ICNCs) in the northern domain where dust sources are located, leading to significantly higher cloud ice number and mass concentrations and ice water path, but the opposite is true in the southern domain where temperatures and moistures play a more important role in ice formation. Overall, the simulation with N12 gives lower downward shortwave radiation but higher downward longwave radiation, cloud liquid water path, cloud droplet number concentrations, and cloud optical depth. The increase in cloud optical depth and the decrease in downward solar flux result in a stronger shortwave and longwave cloud forcing, and decreases temperature at 2-m and precipitation. Changes in temperature and radiation lower surface concentrations of OH, O₃, SO₄²⁻, and PM 2.5, but increase surface concentrations of CO, NO₂, and SO₂ over most of the domain. By acting as cloud condensation nuclei (CCN) and IN, dust particles have different impacts on cloud water and ice number concentrations, radiation, and temperature at 2-m and precipitation depending on whether the dominant role of dust is CCN or IN. These results indicate the importance of the heterogeneous ice nucleation treatments and dust emissions in accurately simulating regional climate and air quality.« less

Application of an Online-Coupled Regional Climate Model, WRF-CAM5, over East Asia for Examination of Ice Nucleation Schemes: Part II. Sensitivity to Heterogeneous Ice Nucleation Parameterizations and Dust Emissions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Yang; Chen, Ying; Fan, Jiwen

Aerosol particles can affect cloud microphysical properties by serving as ice nuclei (IN). Large uncertainties exist in the ice nucleation parameterizations (INPs) used in current climate models. In this Part II paper, to examine the sensitivity of the model predictions to different heterogeneous INPs, WRF-CAM5 simulation using the INP of Niemand et al. (N12) [1] is conducted over East Asia for two full years, 2006 and 2011, and compared with simulation using the INP of Meyers et al. (M92) [2], which is the original INP used in CAM5. M92 calculates the nucleated ice particle concentration as a function of icemore » supersaturation, while N12 represents the nucleated ice particle concentration as a function of temperature and the number concentrations and surface areas of dust particles. Compared to M92, the WRF-CAM5 simulation with N12 produces significantly higher nucleated ice crystal number concentrations (ICNCs) in the northern domain where dust sources are located, leading to significantly higher cloud ice number and mass concentrations and ice water path, but the opposite is true in the southern domain where temperatures and moistures play a more important role in ice formation. Overall, the simulation with N12 gives lower downward shortwave radiation but higher downward longwave radiation, cloud liquid water path, cloud droplet number concentrations, and cloud optical depth. The increase in cloud optical depth and the decrease in downward solar flux result in a stronger shortwave and longwave cloud forcing, and decreases temperature at 2-m and precipitation. Changes in temperature and radiation lower surface concentrations of OH, O 3, SO 4 2-, and PM2.5, but increase surface concentrations of CO, NO 2, and SO 2 over most of the domain. By acting as cloud condensation nuclei (CCN) and IN, dust particles have different impacts on cloud water and ice number concentrations, radiation, and temperature at 2-m and precipitation depending on whether the dominant role of dust is CCN or IN. These results indicate the importance of the heterogeneous ice nucleation treatments and dust emissions in accurately simulating regional climate and air quality.« less

MODIS Solar Diffuser: Modelled and Actual Performance

NASA Technical Reports Server (NTRS)

Waluschka, Eugene; Xiong, Xiao-Xiong; Esposito, Joe; Wang, Xin-Dong; Krebs, Carolyn (Technical Monitor)

2001-01-01

The Moderate Resolution Imaging Spectroradiometer (MODIS) instrument's solar diffuser is used in its radiometric calibration for the reflective solar bands (VIS, NTR, and SWIR) ranging from 0.41 to 2.1 micron. The sun illuminates the solar diffuser either directly or through a attenuation screen. The attenuation screen consists of a regular array of pin holes. The attenuated illumination pattern on the solar diffuser is not uniform, but consists of a multitude of pin-hole images of the sun. This non-uniform illumination produces small, but noticeable radiometric effects. A description of the computer model used to simulate the effects of the attenuation screen is given and the predictions of the model are compared with actual, on-orbit, calibration measurements.

InP/Ga0.47In0.53As monolithic, two-junction, three-terminal tandem solar cells

NASA Technical Reports Server (NTRS)

Wanlaas, M. W.; Gessert, T. A.; Horner, G. S.; Emery, K. A.; Coutts, T. J.

1991-01-01

The work presented has focussed on increasing the efficiency of InP-based solar cells through the development of a high-performance InP/Ga(0.47)In(0.53)As two-junction, three-terminal monolithic tandem cell. Such a tandem is particularly suited to space applications where a radiation-hard top cell (i.e., InP) is required. Furthermore, the InP/Ga(0.47)In(0.53)As materials system is lattice matched and offers a top cell/bottom cell bandgap differential (0.60 eV at 300 K) suitable for high tandem cell efficiencies under AMO illumination. A three-terminal configuration was chosen since it allows for independent power collection from each subcell in the monolithic stack, thus minimizing the adverse impact of radiation damage on the overall tandem efficiency. Realistic computer modeling calculations predict an efficiency boost of 7 to 11 percent from the Ga(0.47)In(0.53)As bottom cell under AMO illumination (25 C) for concentration ratios in the 1 to 1000 range. Thus, practical AMO efficiencies of 25 to 32 percent appear possible with the InP/Ga(0.47)In(0.53)As tandem cell. Prototype n/p/n InP/Ga(0.47)In(0.53)As monolithic tandem cells were fabricated and tested successfully. Using an aperture to define the illuminated areas, efficiency measurements performed on a non-optimized device under standard global illumination conditions (25 C) with no antireflection coating (ARC) give 12.2 percent for the InP top cell and 3.2 percent for the Ga(0.47)In(0.53)As bottom cell, yielding an overall tandem efficiency of 15.4 percent. With an ARC, the tandem efficiency could reach approximately 22 percent global and approximately 20 percent AMO. Additional details regarding the performance of individual InP and Ga(0.47)In(0.53)As component cells, fabrication and operation of complete tandem cells and methods for improving the tandem cell performance, are also discussed.

A high-coverage nanoparticle monolayer for the fabrication of a subwavelength structure on InP substrates.

PubMed

Kim, Dae-Seon; Park, Min-Su; Jang, Jae-Hyung

2011-08-01

Subwavelength structures (SWSs) were fabricated on the Indium Phosphide (InP) substrate by utilizing the confined convective self-assembly (CCSA) method followed by reactive ion etching (RIE). The surface condition of the InP substrate was changed by depositing a 30-nm-thick SiO2 layer and subsequently treating the surface with O2 plasma to achieve better surface coverage. The surface coverage of nanoparticle monolayer reached 90% by using O2 plasma-treated SiO2/InP substrate among three kinds of starting substrates such as the bare InP, SiO2/InP and O2 plasma-treated SiO2/InP substrate. A nanoparticle monolayer consisting of polystyrene spheres with diameter of 300 nm was used as an etch mask for transferring a two-dimensional periodic pattern onto the InP substrate. The fabricated conical SWS with an aspect ratio of 1.25 on the O2 plasma-treated SiO2/InP substrate exhibited the lowest reflectance. The average reflectance of the conical SWS was 5.84% in a spectral range between 200 and 900 nm under the normal incident angle.

Peptides for functionalization of InP semiconductors.

PubMed

Estephan, Elias; Saab, Marie-belle; Larroque, Christian; Martin, Marta; Olsson, Fredrik; Lourdudoss, Sebastian; Gergely, Csilla

2009-09-15

The challenge is to achieve high specificity in molecular sensing by proper functionalization of micro/nano-structured semiconductors by peptides that reveal specific recognition for these structures. Here we report on surface modification of the InP semiconductors by adhesion peptides produced by the phage display technique. An M13 bacteriophage library has been used to screen 10(10) different peptides against the InP(001) and the InP(111) surfaces to finally isolate specific peptides for each orientation of the InP. MALDI-TOF/TOF mass spectrometry has been employed to study real affinity of the peptide towards the InP surfaces. The peptides serve for controlled placement of biotin onto InP to bind then streptavidin. Our Atomic Force Microscopy study revealed a total surface coverage of molecules when the InP surface was functionalized by its specific biotinylated peptide (YAIKGPSHFRPS). Finally, fluorescence microscopy has been employed to demonstrate the preferential attachment of the peptide onto a micro-patterned InP surface. Use of substrate specific peptides could present an alternative solution for the problems encountered in the actually existing sensing methods and molecular self-assembly due to the unwanted unspecific interactions.

TP53INP2/DOR, a mediator of cell autophagy, promotes rDNA transcription via facilitating the assembly of the POLR1/RNA polymerase I preinitiation complex at rDNA promoters.

PubMed

Xu, Yinfeng; Wan, Wei; Shou, Xin; Huang, Rui; You, Zhiyuan; Shou, Yanhong; Wang, Lingling; Zhou, Tianhua; Liu, Wei

2016-07-02

Cells control their metabolism through modulating the anabolic and catabolic pathways. TP53INP2/DOR (tumor protein p53 inducible nuclear protein 2), participates in cell catabolism by serving as a promoter of autophagy. Here we uncover a novel function of TP53INP2 in protein synthesis, a major biosynthetic and energy-consuming anabolic process. TP53INP2 localizes to the nucleolus through its nucleolar localization signal (NoLS) located at the C-terminal domain. Chromatin immunoprecipitation (ChIP) assays detected an association of TP53INP2 with the ribosomal DNA (rDNA), when exclusion of TP53INP2 from the nucleolus repressed rDNA promoter activity and the production of ribosomal RNA (rRNA) and proteins. The removal of TP53INP2 also impaired the association of the POLR1/RNA polymerase I preinitiation complex (PIC) with rDNA. Further, TP53INP2 interacts directly with POLR1 PIC, and is required for the assembly of the complex. These data indicate that TP53INP2 promotes ribosome biogenesis through facilitating rRNA synthesis at the nucleolus, suggesting a dual role of TP53INP2 in cell metabolism, assisting anabolism on the nucleolus, and stimulating catabolism off the nucleolus.

Mecanismes fondamentaux et dynamique d'interdiffusion dans les boites quantiques auto-assemblees InAs/InP

NASA Astrophysics Data System (ADS)

Dion, Carolyne

This thesis contributes both to the understanding of the fundamental mechanisms driving the intermixing process in the InAs/InP quantum dot (QD) system and to the development of effective intermixing techniques for the integration of these structures into the next generations of optoelectronic devices for optical telecommunications. More specifically, we study the interdiffusion occurring (i) during heterostructure growth and ( ii) under thermal annealing in structures subjected to grown-in defects (GID) introduced into epitaxial layer during growth at reduced temperatures, or damage created by low-energy phosphorus ion implantation (LEII). Interdiffusion is probed using photoluminescence (PL) spectroscopy in conjunction with calculations of optical transition energies obtained from a tight-binding model. These investigations are completed by structural analyses using transmission electron microscopy (TEM). The characterization of the self-assembled QDs produced from the heteroepitaxy of pure InAs on InP reveals that the structures are significantly interdiffused. All structures in a given sample have the same phosphorus concentration, with [P] varying from 6 to 10% depending on growth conditions. We suggest that such substantial P incorporation into InAs during heteroepitaxy results from the surface As/P exchange process as well as strain-driven alloying. We show that GID and LEII-mediated intermixing techniques are both promising for spatially selective band gap tuning of InAs/InP QDs, producing lower annealing temperature threshold for detectable PL modification and PL blueshifts up to ˜ 270 meV. Upon annealing, PL spectra from standard and GID samples exhibit progressive blueshifts without bandwidth broadening. In contrast, PL spectra from LEII samples show the rise of a high energy peak superimposed to the original spectrum, leading to an apparent overall blueshift with significant bandwidth broadening. On the other hand, as confirmed by TEM, the QD shape is found to convert from a truncated pyramid in the as-grown state into either a dome or double-convex lens in annealed GID and LEII samples, respectively. Based on the evolution of PL characteristics and QDs morphology, we demonstrate that thermally-induced intermixing and GID-enhanced intermixing are governed by the transport of group-V interstitials emanating from the InP epilayer, while LEII-enhanced intermixing is dominated by the motion of group-V vacancies released by the implantation damage. Finally, we determine the diffusion coefficients corresponding to these two atomistic diffusion mechanisms. Keywords: Semiconductors, InAs, InP, quantum dots, diffusion, intermixing, photoluminescence, transmission electron microscopy.

Surface photovoltage method extended to silicon solar cell junction

NASA Technical Reports Server (NTRS)

Wang, E. Y.; Baraona, C. R.; Brandhorst, H. W., Jr.

1974-01-01

The conventional surface photovoltage (SPV) method is extended to the measurement of the minority carrier diffusion length in diffused semiconductor junctions of the type used in a silicon solar cell. The minority carrier diffusion values obtained by the SPV method agree well with those obtained by the X-ray method. Agreement within experimental error is also obtained between the minority carrier diffusion lengths in solar cell diffusion junctions and in the same materials with n-regions removed by etching, when the SPV method was used in the measurements.

SeaWiFS long-term solar diffuser reflectance and sensor noise analyses.

PubMed

Eplee, Robert E; Patt, Frederick S; Barnes, Robert A; McClain, Charles R

2007-02-10

The NASA Ocean Biology Processing Group's Calibration and Validation (Cal/Val) team has undertaken an analysis of the mission-long Sea-Viewing Wide Field-of-View Sensor (SeaWiFS) solar calibration time series to assess the long-term degradation of the solar diffuser reflectance over 9 years on orbit. The SeaWiFS diffuser is an aluminum plate coated with YB71 paint. The bidirectional reflectance distribution function of the diffuser was not fully characterized before launch, so the Cal/Val team has implemented a regression of the solar incidence angles and the drift in the node of the satellite's orbit against the diffuser time series to correct for solar incidence angle effects. An exponential function with a time constant of 200 days yields the best fit to the diffuser time series. The decrease in diffuser reflectance over the mission is wavelength dependent, ranging from 9% in the blue (412 nm) to 5% in the red and near infrared (670-865 nm). The Cal/Val team has developed a methodology for computing the signal-to-noise ratio (SNR) for SeaWiFS on orbit from the diffuser time series corrected for both the varying solar incidence angles and the diffuser reflectance degradation. A sensor noise model is used to compare on-orbit SNRs computed for radiances reflected from the diffuser with prelaunch SNRs measured at typical radiances specified for the instrument. To within the uncertainties in the measurements, the SNRs for SeaWiFS have not changed over the mission. The on-orbit performance of the SeaWiFS solar diffuser should offer insight into the long-term on-orbit performance of solar diffusers on other instruments, such as the Moderate-Resolution Imaging Spectrometer [currently flying on the Earth Observing System (EOS) Terra and Aqua satellites], the Visible and Infrared Radiometer Suite [scheduled to fly on the NASA National Polar-orbiting Operational Environmental Satellite System (NPOESS) and NPOESS Preparatory Project (NPP) satellites] and the Advanced Baseline Imager [scheduled to fly on the National Oceanic and Atmospheric Administration Geostationary Environmental Operational Satellite Series R (GOES-R) satellites].

SeaWiFS long-term solar diffuser reflectance and sensor noise analyses

DOE Office of Scientific and Technical Information (OSTI.GOV)

Eplee, Robert E. Jr.; Patt, Frederick S.; Barnes, Robert A.

The NASA Ocean Biology Processing Group's Calibration and Validation(Cal/Val) team has undertaken an analysis of the mission-long Sea-Viewing Wide Field-of-View Sensor (SeaWiFS)solar calibration time series to assess the long-term degradation of the solar diffuser reflectance over 9 years on orbit. The SeaWiFS diffuser is an aluminum plate coated with YB71 paint. The bidirectional reflectance distribution function of the diffuser was not fully characterized before launch,so the Cal/Val team has implemented a regression of the solar incidence angles and the drift in the node of the satellite's orbit against the diffuser time series to correct for solar incidence angle effects. Anmore » exponential function with a time constant of 200 days yields the best fit to the diffuser time series.The decrease in diffuser reflectance over the mission is wavelength dependent,ranging from 9% in the blue(412 nm) to 5% in the red and near infrared(670-865 nm). The Cal/Val team has developed a methodology for computing the signal-to-noise ratio (SNR) for SeaWiFS on orbit from the diffuser time series corrected for both the varying solar incidence angles and the diffuser reflectance degradation. A sensor noise model is used to compare on-orbit SNRs computed for radiances reflected from the diffuser with prelaunch SNRs measured at typical radiances specified for the instrument. To within the uncertainties in the measurements, the SNRs for SeaWiFS have not changed over the mission. The on-orbit performance of the SeaWiFS solar diffuser should offer insight into the long-term on-orbit performance of solar diffusers on other instruments, such as the Moderate-Resolution Imaging Spectrometer [currently flying on the Earth Observing System (EOS) Terra and Aqua satellites], the Visible and Infrared Radiometer Suite [scheduled to fly on the NASA National Polar-orbiting Operational Environmental Satellite System (NPOESS) and NPOESS Preparatory Project (NPP) satellites] and the Advanced Baseline Imager [scheduled to fly on the National Oceanic and Atmospheric Administration Geostationary Environmental Operational Satellite Series R (GOES-R) satellites].« less

SeaWiFS long-term solar diffuser reflectance and sensor noise analyses

NASA Astrophysics Data System (ADS)

Eplee, Robert E., Jr.; Patt, Frederick S.; Barnes, Robert A.; McClain, Charles R.

2007-02-01

The NASA Ocean Biology Processing Group's Calibration and Validation (Cal/Val) team has undertaken an analysis of the mission-long Sea-Viewing Wide Field-of-View Sensor (SeaWiFS) solar calibration time series to assess the long-term degradation of the solar diffuser reflectance over 9 years on orbit. The SeaWiFS diffuser is an aluminum plate coated with YB71 paint. The bidirectional reflectance distribution function of the diffuser was not fully characterized before launch, so the Cal/Val team has implemented a regression of the solar incidence angles and the drift in the node of the satellite's orbit against the diffuser time series to correct for solar incidence angle effects. An exponential function with a time constant of 200 days yields the best fit to the diffuser time series. The decrease in diffuser reflectance over the mission is wavelength dependent, ranging from 9% in the blue (412 nm) to 5% in the red and near infrared (670-865 nm). The Cal/Val team has developed a methodology for computing the signal-to-noise ratio (SNR) for SeaWiFS on orbit from the diffuser time series corrected for both the varying solar incidence angles and the diffuser reflectance degradation. A sensor noise model is used to compare on-orbit SNRs computed for radiances reflected from the diffuser with prelaunch SNRs measured at typical radiances specified for the instrument. To within the uncertainties in the measurements, the SNRs for SeaWiFS have not changed over the mission. The on-orbit performance of the SeaWiFS solar diffuser should offer insight into the long-term on-orbit performance of solar diffusers on other instruments, such as the Moderate-Resolution Imaging Spectrometer [currently flying on the Earth Observing System (EOS) Terra and Aqua satellites], the Visible and Infrared Radiometer Suite [scheduled to fly on the NASA National Polar-orbiting Operational Environmental Satellite System (NPOESS) and NPOESS Preparatory Project (NPP) satellites] and the Advanced Baseline Imager [scheduled to fly on the National Oceanic and Atmospheric Administration Geostationary Environmental Operational Satellite Series R (GOES-R) satellites].

Analysis of direct to diffuse partitioning of global solar irradiance at the radiometric station in Badajoz (Spain)

NASA Astrophysics Data System (ADS)

Sanchez, G.; Cancillo, M. L.; Serrano, A.

2010-09-01

This study is aimed at the analysis of the partitioning of global solar irradiance into its direct and diffuse components at the radiometric station in Badajoz (Spain). The detailed knowledge of the solar radiation field is of increasing interest in Southern Europe due to its use as renewable energy. In particular, the knowledge of the solar radiation partitioning into direct and diffuse radiation has become a major demand for the design and suitable orientation of solar panels in solar power plants. In this study the first measurements of solar diffuse irradiance performed in the radiometric station in Badajoz (Spain) are presented and analyzed in the framework of the partitioning of solar global radiation. Thus, solar global and diffuse irradiance were measured at one-minute basis from 23 November 2009 to 31 March 2010. Solar irradiances were measured by two Kipp&Zonen CMP11 pyranometers, using a Kipp&Zonen CM121 shadow ring for the measurements of solar diffuse irradiance. Diffuse measurements were corrected from the solid angle hidden by the ring and direct irradiance was calculated as the difference between global and diffuse measurements. Irradiance was obtained from the pyranomenters by applying calibration coefficients obtained in an inter-comparison campaign performed at INTA/El Arenosillo, in Huelva (Spain), last September 2009. There, calibration coefficients were calculated using as a reference a CMP11 pyranometer which had been previously calibrated by the Physikalisch-Meteorologisches Observatorium Davos/World Radiation Centre in Switzerland. In order to study the partitioning of the solar radiation, the global and diffuse irradiances have been analyzed for three typical different sky conditions: cloud-free, broken clouds and overcast. Particular days within the period of study have been selected by visual inspection. Along with the analysis of the global and diffuse irradiances themselves, ratios of these irradiances to the downward irradiance at the top of the atmosphere have also been analyzed. Several interesting features have been found. It is particularly worth to note the decreasing relative contribution of the direct component to the global irradiance as the solar zenith angle increases, due to a longer path crossed within the atmosphere. In broken clouds and overcast conditions, the diffuse component becomes the major contribution to the irradiance being the high-frequency variability the main difference between both type of cases. While in overcast conditions the global irradiance remains remarkably low, under broken clouds the global irradiance shows a very high variability frequently reaching values higher than the irradiance at the top of the atmosphere, due to multi-reflection phenomenon. The present study contributes to a better knowledge of the radiation field and its partitioning, involving original high-frequency measurements.

Positron transport studies at the Au - (InP:Fe) interface

NASA Astrophysics Data System (ADS)

Au, H. L.; Lee, T. C.; Beling, C. D.; Fung, S.

1996-03-01

Positron mobility and lifetime measurements have been carried out on semi-insulating Fe-doped InP samples with Au contacts used for electric field application. The lifetime measurements, with electric fields directed towards the Au - InP:Fe interface, reveal no component associated with interfacial open-volume sites and thus give no evidence of any positron mobility. The mobility measurements, made using the Doppler-shifted annihilation radiation technique, however, reveal a temperature independent positron mobility of about 0953-8984/8/10/012/img1 in the range 150 - 300 K. These observations, together with results from I - V analysis, are discussed with reference to two possible band-bending schemes. The first, which requires an ionized shallow donor region adjacent to the Au - InP interface, seems less plausible on a number of grounds. In the second, however, an 0953-8984/8/10/012/img2 negative space charge produces an adverse diffusion barrier for positrons approaching the interface together with a non-uniform electric field in the samples capable of explaining the observed mobility results.

The SPectrometer for Ice Nuclei (SPIN): An instrument to investigate ice nucleation

DOE PAGES

Garimella, Sarvesh; Kristensen, Thomas Bjerring; Ignatius, Karolina; ...

2016-07-06

The SPectrometer for Ice Nuclei (SPIN) is a commercially available ice nucleating particle (INP) counter manufactured by Droplet Measurement Technologies in Boulder, CO. The SPIN is a continuous flow diffusion chamber with parallel plate geometry based on the Zurich Ice Nucleation Chamber and the Portable Ice Nucleation Chamber. This study presents a standard description for using the SPIN instrument and also highlights methods to analyze measurements in more advanced ways. It characterizes and describes the behavior of the SPIN chamber, reports data from laboratory measurements, and quantifies uncertainties associated with the measurements. Experiments with ammonium sulfate are used to investigatemore » homogeneous freezing of deliquesced haze droplets and droplet breakthrough. Experiments with kaolinite, NX illite, and silver iodide are used to investigate heterogeneous ice nucleation. SPIN nucleation results are compared to those from the literature. A machine learning approach for analyzing depolarization data from the SPIN optical particle counter is also presented (as an advanced use). Altogether, we report that the SPIN is able to reproduce previous INP counter measurements.« less

Effect of sulfur passivation on the InP surface prior to plasma-enhanced chemical vapor deposition of SiNx

NASA Astrophysics Data System (ADS)

Tang, Hengjing; Wu, Xiaoli; Xu, Qinfei; Liu, Hongyang; Zhang, Kefeng; Wang, Yang; He, Xiangrong; Li, Xue; Gong, Hai Mei

2008-03-01

The fabrication of Au/SiNx/InP metal-insulator-semiconductor (MIS) diodes has been achieved by depositing a layer of SiNx on the (NH4)2Sx-treated n-InP. The SiNx layer was deposited at 200 °C using plasma-enhanced chemical vapor deposition (PECVD). The effect of passivation on the InP surface before and after annealing was evaluated by current-voltage (I-V) and capacitance-voltage (C-V) measurements, and Auger electron spectroscopy (AES) analysis was used to investigate the depth profiles of several atoms. The results indicate that the SiNx passivation layer exhibits good insulative characteristics. The annealing process causes distinct inter-diffusion in the SiNx/InP interface and contributes to the decrease of the fixed charge density and minimum interface state density, which are 1.96 × 1012 cm-2 and 7.41 × 1011 cm-2 eV-1, respectively. A 256 × 1 InP/InGaAs/InP heterojunction photodiode, fabricated with sulfidation and SiNx passivation layer, has good response uniformity.

Recent results from advanced research on space solar cells at NASA

NASA Technical Reports Server (NTRS)

Flood, Dennis J.

1990-01-01

The NASA program in space photovoltaic research and development encompasses a wide range of emerging options for future space power systems, and includes both cell and array technology development. The long range goals are to develop technology capable of achieving 300 W/kg for planar arrays, and 300 W/sq m for concentrator arrays. InP and GaAs planar and concentrator cell technologies are under investigation for their potential high efficiency and good radiation resistance. The Advanced Photovoltaic Solar Array (APSA) program is a near term effort aimed at demonstrating 130 W/kg beginning of life specific power using thin (62 pm) silicon cells. It is intended to be technology transparent to future high efficiency cells and provides the baseline for development of the 300 W/kg array.

Measurement of excitation functions and analysis of isomeric population in some reactions induced by proton on natural indium at low energy

NASA Astrophysics Data System (ADS)

Muhammed Shan, P. T.; Musthafa, M. M.; Najmunnisa, T.; Mohamed Aslam, P.; Rajesh, K. K.; Hajara, K.; Surendran, P.; Nair, J. P.; Shanbagh, Anil; Ghugre, S.

2018-06-01

The excitation functions for reaction residues populated via 115In(p , p) 115 mIn, 115In(p , pn) 114 mIn, 115In(p , p 2 n) 113 mIn, 113In(p , p) 113 mIn, 115In(p , nα) 111 mCd, 115In(p , 3 n) 113Sn and 113In(p , n) 113Sn channels were measured over the proton energy range of 8-22 MeV using stacked foil activation technique. Theoretical analysis of the data were performed within the framework of two statistical model codes EMPIRE-3.2 and TALYS-1.8. Isomeric cross section ratio for isomeric pairs m,g 115In, m,g 114In, m,g 113In, 113Sn m,g and m,g 111Cd were determined for the first time. The dependence of isomeric cross section ratio on various factors are analysed.

Enhanced light output from the nano-patterned InP semiconductor substrate through the nanoporous alumina mask.

PubMed

Jung, Mi; Kim, Jae Hun; Lee, Seok; Jang, Byung Jin; Lee, Woo Young; Oh, Yoo-Mi; Park, Sun-Woo; Woo, Deokha

2012-07-01

A significant enhancement in the light output from nano-patterned InP substrate covered with a nanoporous alumina mask was observed. A uniform nanohole array on an InP semiconductor substrate was fabricated by inductively coupled plasma reactive ion etching (ICP-RIE), using the nanoporous alumina mask as a shadow mask. The light output property of the semiconductor substrate was investigated via photoluminescence (PL) intensity measurement. The InP substrate with a nanohole array showed a more enhanced PL intensity compared with the raw InP substrate without a nanohole structure. After ICP-RIE etching, the light output from the nanoporous InP substrate covered with a nanoporous alumina mask showed fourfold enhanced PL intensity compared with the raw InP substrate. These results can be used as a prospective method for increasing the light output efficiency of optoelectronic devices.

Electron guns and collectors developed at INP for electron cooling devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sharapa, A.N.; Shemyakin, A.V.

1997-09-01

Institute of Nuclear Physics (INP) has a rich experience in designing electron guns and collectors for electron cooling devices. This paper is a review of the experience of several INP research groups in this field. Some results obtained at INP for systems without a guiding magnetic field are also discussed.

Ice-nucleating particles in Canadian Arctic sea-surface microlayer and bulk seawater

NASA Astrophysics Data System (ADS)

Irish, Victoria E.; Elizondo, Pablo; Chen, Jessie; Chou, Cédric; Charette, Joannie; Lizotte, Martine; Ladino, Luis A.; Wilson, Theodore W.; Gosselin, Michel; Murray, Benjamin J.; Polishchuk, Elena; Abbatt, Jonathan P. D.; Miller, Lisa A.; Bertram, Allan K.

2017-09-01

The sea-surface microlayer and bulk seawater can contain ice-nucleating particles (INPs) and these INPs can be emitted into the atmosphere. Our current understanding of the properties, concentrations, and spatial and temporal distributions of INPs in the microlayer and bulk seawater is limited. In this study we investigate the concentrations and properties of INPs in microlayer and bulk seawater samples collected in the Canadian Arctic during the summer of 2014. INPs were ubiquitous in the microlayer and bulk seawater with freezing temperatures in the immersion mode as high as -14 °C. A strong negative correlation (R = -0. 7, p = 0. 02) was observed between salinity and freezing temperatures (after correction for freezing depression by the salts). One possible explanation is that INPs were associated with melting sea ice. Heat and filtration treatments of the samples show that the INPs were likely heat-labile biological materials with sizes between 0.02 and 0.2 µm in diameter, consistent with previous measurements off the coast of North America and near Greenland in the Arctic. The concentrations of INPs in the microlayer and bulk seawater were consistent with previous measurements at several other locations off the coast of North America. However, our average microlayer concentration was lower than previous observations made near Greenland in the Arctic. This difference could not be explained by chlorophyll a concentrations derived from satellite measurements. In addition, previous studies found significant INP enrichment in the microlayer, relative to bulk seawater, which we did not observe in this study. While further studies are needed to understand these differences, we confirm that there is a source of INP in the microlayer and bulk seawater in the Canadian Arctic that may be important for atmospheric INP concentrations.

DOR/Tp53inp2 and Tp53inp1 constitute a metazoan gene family encoding dual regulators of autophagy and transcription.

PubMed

Sancho, Ana; Duran, Jordi; García-España, Antonio; Mauvezin, Caroline; Alemu, Endalkachew A; Lamark, Trond; Macias, Maria J; DeSalle, Rob; Royo, Miriam; Sala, David; Chicote, Javier U; Palacín, Manuel; Johansen, Terje; Zorzano, Antonio

2012-01-01

Human DOR/TP53INP2 displays a unique bifunctional role as a modulator of autophagy and gene transcription. However, the domains or regions of DOR that participate in those functions have not been identified. Here we have performed structure/function analyses of DOR guided by identification of conserved regions in the DOR gene family by phylogenetic reconstructions. We show that DOR is present in metazoan species. Invertebrates harbor only one gene, DOR/Tp53inp2, and in the common ancestor of vertebrates Tp53inp1 may have arisen by gene duplication. In keeping with these data, we show that human TP53INP1 regulates autophagy and that different DOR/TP53INP2 and TP53INP1 proteins display transcriptional activity. The use of molecular evolutionary information has been instrumental to determine the regions that participate in DOR functions. DOR and TP53INP1 proteins share two highly conserved regions (region 1, aa residues 28-42; region 2, 66-112 in human DOR). Mutation of conserved hydrophobic residues in region 1 of DOR (that are part of a nuclear export signal, NES) reduces transcriptional activity, and blocks nuclear exit and autophagic activity under autophagy-activated conditions. We also identify a functional and conserved LC3-interacting motif (LIR) in region 1 of DOR and TP53INP1 proteins. Mutation of conserved acidic residues in region 2 of DOR reduces transcriptional activity, impairs nuclear exit in response to autophagy activation, and disrupts autophagy. Taken together, our data reveal DOR and TP53INP1 as dual regulators of transcription and autophagy, and identify two conserved regions in the DOR family that concentrate multiple functions crucial for autophagy and transcription.

DOR/Tp53inp2 and Tp53inp1 Constitute a Metazoan Gene Family Encoding Dual Regulators of Autophagy and Transcription

PubMed Central

Sancho, Ana; Duran, Jordi; García-España, Antonio; Mauvezin, Caroline; Alemu, Endalkachew A.; Lamark, Trond; Macias, Maria J.; DeSalle, Rob; Royo, Miriam; Sala, David; Chicote, Javier U.; Palacín, Manuel; Johansen, Terje; Zorzano, Antonio

2012-01-01

Human DOR/TP53INP2 displays a unique bifunctional role as a modulator of autophagy and gene transcription. However, the domains or regions of DOR that participate in those functions have not been identified. Here we have performed structure/function analyses of DOR guided by identification of conserved regions in the DOR gene family by phylogenetic reconstructions. We show that DOR is present in metazoan species. Invertebrates harbor only one gene, DOR/Tp53inp2, and in the common ancestor of vertebrates Tp53inp1 may have arisen by gene duplication. In keeping with these data, we show that human TP53INP1 regulates autophagy and that different DOR/TP53INP2 and TP53INP1 proteins display transcriptional activity. The use of molecular evolutionary information has been instrumental to determine the regions that participate in DOR functions. DOR and TP53INP1 proteins share two highly conserved regions (region 1, aa residues 28–42; region 2, 66–112 in human DOR). Mutation of conserved hydrophobic residues in region 1 of DOR (that are part of a nuclear export signal, NES) reduces transcriptional activity, and blocks nuclear exit and autophagic activity under autophagy-activated conditions. We also identify a functional and conserved LC3-interacting motif (LIR) in region 1 of DOR and TP53INP1 proteins. Mutation of conserved acidic residues in region 2 of DOR reduces transcriptional activity, impairs nuclear exit in response to autophagy activation, and disrupts autophagy. Taken together, our data reveal DOR and TP53INP1 as dual regulators of transcription and autophagy, and identify two conserved regions in the DOR family that concentrate multiple functions crucial for autophagy and transcription. PMID:22470510

DOE Office of Scientific and Technical Information (OSTI.GOV)

DeMott, Paul J; Hill, Thomas CJ

Measurements were sought to evaluate a hypotheses that sea-spray-sourced ice-nucleating particles (INPs) are of biological origin and represent a distinctly different INP population in comparison to long-range-transported desert or urban and regional land-sourced INP, and that the layering of marine within other aerosol layers feeding orographic storms over the mountains of California and the Western United States thereby leads to common and quantifiable scenarios that influence precipitation over the region. Aerosol collections on the National Oceanic and Atmospheric Administration (NOAA) research vessel (RV) Ronald H. Brown, for subsequent processing of INP immersion freezing activation temperature spectra and composition analyses, addedmore » a valuable measurement component to the ARM Cloud Aerosol Precipitation Experiment (ACAPEX) and related CalWater2 (NOAA) studies for use in parameterizing and modeling the impacts of marine boundary layer and other aerosols on climate and radiation via aerosol indirect effects on mixed-phase clouds. Twenty-five nominally 24-hour collections were made and have been processed for immersion freezing INP number concentrations versus temperature in the mixed-phase cloud temperature regime from -10 to -27°C. The similarity of INP number concentrations compared to typical marine boundary layer values attributed to sea-spray aerosols was noted. Nevertheless, variability of INP concentrations of up to 50 times was noted at individual temperatures over the course of the study. A particular analysis possible with this data set is to examine INP budgets over oceans inside versus outside of atmospheric river conditions. These INP measurements supplemented multiple airborne INP measurements on the ARM Aerial Facility (AAF), and others on the ground during ACAPEX and CalWater2, to provide extensive spatial and temporal analyses of INP immersion freezing spectra during winter storm periods. Future analyses will use thermal sensitivity to examine INP compositions as organic versus inorganic in these marine boundary layer samples. Data set integration is occurring under funding from an Atmospheric System Research (ASR) proposal.« less

Progress Towards Identifying and Quantifying the Organic Ice Nucleating Particles in Soils and Aerosols

NASA Astrophysics Data System (ADS)

Hill, T. C. J.; DeMott, P. J.; Fröhlich-Nowoisky, J.; Tobo, Y.; Suski, K. J.; Levin, E. J.; Kreidenweis, S. M.; Franc, G. D.

2014-12-01

Soil and plant surfaces emit ice nucleating particles (INP) to the atmosphere, especially when disturbed by wind, harvesting, rain or fire. Organic (biogenic) INP are abundant in most soils and dominate the population that nucleate >-15°C. For example, the sandy topsoil of sagebrush shrubland, a widespread ecotype prone to wind erosion after fire, contains ~106 organic INP g-1 at -6°C. The relevance of organic INP may also extend to colder temperatures than previously thought: Particles of soil organic matter (SOM) have been shown to be more important than mineral particles for the ice nucleating ability of agricultural soil dusts to -34°C. While the abundance of ice nucleation active (INA) bacteria on plants has been established, the identity of the organic INP in and emitted by soils remains a 40-year-old mystery. The need to understand their production and release is highlighted by recent findings that INA bacteria (measured with qPCR) account for few, if any, of the warm-temperature organic INP that predominate in boundary layer aerosols and snow; organic INP lofted with soil dusts seem a likely source. The complexity of SOM hinders its investigation. It contains decomposing plant materials, a diverse microbial and microfaunal community, humus, and inert organic matter. All are biochemically complex and all may contain ice nucleating constituents, either by design or by chance. Indeed the smoothness of the INP temperature spectra of soils is indicative of numerous, overlapping distributions of INP. We report recent progress in identifying and quantifying the organic INP in soils and boundary layer aerosols representative of West Central U.S. ecosystems, and how their characteristics may affect their dispersal. Chemical, enzymatic and DNA-based tests were used to assess contributions of INP from plant tissues, INA bacteria, INA fungi, organic crystals, monolayers of aliphatic alcohols, carbohydrates, and humic substances, while heat- and peroxide-based tests were used to estimate total organic INP abundance.

Isoelectronic co-doping

DOEpatents

Mascarenhas, Angelo

2004-11-09

Isoelectronic co-doping of semiconductor compounds and alloys with deep acceptors and deep donors is used to decrease bandgap, to increase concentration of the dopant constituents in the resulting alloys, and to increase carrier mobilities lifetimes. Group III-V compounds and alloys, such as GaAs and GaP, are isoelectronically co-doped with, for example, N and Bi, to customize solar cells, thermal voltaic cells, light emitting diodes, photodetectors, and lasers on GaP, InP, GaAs, Ge, and Si substrates. Isoelectronically co-doped Group II-VI compounds and alloys are also included.

Sources of organic ice nucleating particles in soils

NASA Astrophysics Data System (ADS)

Hill, Tom C. J.; DeMott, Paul J.; Tobo, Yutaka; Fröhlich-Nowoisky, Janine; Moffett, Bruce F.; Franc, Gary D.; Kreidenweis, Sonia M.

2016-06-01

Soil organic matter (SOM) may be a significant source of atmospheric ice nucleating particles (INPs), especially of those active > -15 °C. However, due to both a lack of investigations and the complexity of the SOM itself, the identities of these INPs remain unknown. To more comprehensively characterize organic INPs we tested locally representative soils in Wyoming and Colorado for total organic INPs, INPs in the heat-labile fraction, ice nucleating (IN) bacteria, IN fungi, IN fulvic and humic acids, IN plant tissue, and ice nucleation by monolayers of aliphatic alcohols. All soils contained ≈ 106 to ≈ 5 × 107 INPs g-1 dry soil active at -10 °C. Removal of SOM with H2O2 removed ≥ 99 % of INPs active > -18 °C (the limit of testing), while heating of soil suspensions to 105 °C showed that labile INPs increasingly predominated > -12 °C and comprised ≥ 90 % of INPs active > -9 °C. Papain protease, which inactivates IN proteins produced by the fungus Mortierella alpina, common in the region's soils, lowered INPs active at ≥ -11 °C by ≥ 75 % in two arable soils and in sagebrush shrubland soil. By contrast, lysozyme, which digests bacterial cell walls, only reduced INPs active at ≥ -7.5 or ≥ -6 °C, depending on the soil. The known IN bacteria were not detected in any soil, using PCR for the ina gene that codes for the active protein. We directly isolated and photographed two INPs from soil, using repeated cycles of freeze testing and subdivision of droplets of dilute soil suspensions; they were complex and apparently organic entities. Ice nucleation activity was not affected by digestion of Proteinase K-susceptible proteins or the removal of entities composed of fulvic and humic acids, sterols, or aliphatic alcohol monolayers. Organic INPs active colder than -10 to -12 °C were resistant to all investigations other than heat, oxidation with H2O2, and, for some, digestion with papain. They may originate from decomposing plant material, microbial biomass, and/or the humin component of the SOM. In the case of the latter then they are most likely to be a carbohydrate. Reflecting the diversity of the SOM itself, soil INPs have a range of sources which occur with differing relative abundances.

Influence of the Solar Cycle on Turbulence Properties and Cosmic-Ray Diffusion

NASA Astrophysics Data System (ADS)

Zhao, L.-L.; Adhikari, L.; Zank, G. P.; Hu, Q.; Feng, X. S.

2018-04-01

The solar cycle dependence of various turbulence quantities and cosmic-ray (CR) diffusion coefficients is investigated by using OMNI 1 minute resolution data over 22 years. We employ Elsässer variables z ± to calculate the magnetic field turbulence energy and correlation lengths for both the inwardly and outwardly directed interplanetary magnetic field (IMF). We present the temporal evolution of both large-scale solar wind (SW) plasma variables and small-scale magnetic fluctuations. Based on these observed quantities, we study the influence of solar activity on CR parallel and perpendicular diffusion using quasi-linear theory and nonlinear guiding center theory, respectively. We also evaluate the radial evolution of the CR diffusion coefficients by using the boundary conditions for different solar activity levels. We find that in the ecliptic plane at 1 au (1), the large-scale SW temperature T, velocity V sw, Alfvén speed V A , and IMF magnitude B 0 are positively related to solar activity; (2) the fluctuating magnetic energy density < {{z}+/- }2> , residual energy E D , and corresponding correlation functions all have an obvious solar cycle dependence. The residual energy E D is always negative, which indicates that the energy in magnetic fluctuations is larger than the energy in kinetic fluctuations, especially at solar maximum; (3) the correlation length λ for magnetic fluctuations does not show significant solar cycle variation; (4) the temporally varying shear source of turbulence, which is most important in the inner heliosphere, depends on the solar cycle; (5) small-scale fluctuations may not depend on the direction of the background magnetic field; and (6) high levels of SW fluctuations will increase CR perpendicular diffusion and decrease CR parallel diffusion, but this trend can be masked if the background IMF changes in concert with turbulence in response to solar activity. These results provide quantitative inputs for both turbulence transport models and CR diffusion models, and also provide valuable insight into the long-term modulation of CRs in the heliosphere.

Experimental determination of the reference plane of shaped diffusers by solar ultraviolet measurements.

PubMed

Gröbner, Julian; Blumthaler, Mario

2007-01-01

The optical reference plane of a J1002 shaped dome diffuser from CMS-Schreder was determined using direct normal spectral solar UV irradiance measurements relative to a flat Teflon diffuser. The spectroradiometers were calibrated relative to the same irradiance standard. The optical reference plane of the shaped J1002 diffuser is 5.3 mm behind the top of the dome with an uncertainty of 1.0 mm. Solar UV irradiance measurements based on a lamp calibration using the top of the dome as the reference will overestimate the global solar irradiance by 2.1% for the usual calibration distance of 500 mm.

Comparison of modeled and typical meteorological year. Diffuse, direct, and tilted solar radiation values with measured data in a cloudy climate: Seattle-Tacoma data

DOE Office of Scientific and Technical Information (OSTI.GOV)

Straub, D.; Baylon, D.; Smith, O.

1980-01-01

Four commonly used solar radiation models that determine the diffuse and direct components of the solar radiation on a horizontal surface are compared against measured data to determine their predictive and modeling applicability. The John Hay model is determined to underpredict the diffuse and the Pereira/Rabl model to overpredict the diffuse radiation. The daily Liu and Jordan correlation and the hourly Boes correlation are shown to be better predictors.

High-Efficiency Nanowire Solar Cells with Omnidirectionally Enhanced Absorption Due to Self-Aligned Indium-Tin-Oxide Mie Scatterers.

PubMed

van Dam, Dick; van Hoof, Niels J J; Cui, Yingchao; van Veldhoven, Peter J; Bakkers, Erik P A M; Gómez Rivas, Jaime; Haverkort, Jos E M

2016-12-27

Photovoltaic cells based on arrays of semiconductor nanowires promise efficiencies comparable or even better than their planar counterparts with much less material. One reason for the high efficiencies is their large absorption cross section, but until recently the photocurrent has been limited to less than 70% of the theoretical maximum. Here we enhance the absorption in indium phosphide (InP) nanowire solar cells by employing broadband forward scattering of self-aligned nanoparticles on top of the transparent top contact layer. This results in a nanowire solar cell with a photovoltaic conversion efficiency of 17.8% and a short-circuit current of 29.3 mA/cm 2 under 1 sun illumination, which is the highest reported so far for nanowire solar cells and among the highest reported for III-V solar cells. We also measure the angle-dependent photocurrent, using time-reversed Fourier microscopy, and demonstrate a broadband and omnidirectional absorption enhancement for unpolarized light up to 60° with a wavelength average of 12% due to Mie scattering. These results unambiguously demonstrate the potential of semiconductor nanowires as nanostructures for the next generation of photovoltaic devices.

Modeling of high efficiency solar cells under laser pulse for power beaming applications

NASA Technical Reports Server (NTRS)

Jain, Raj K.; Landis, Geoffrey A.

1994-01-01

Solar cells have been used to convert sunlight to electrical energy for many years and also offer great potential for non-solar energy conversion applications. Their greatly improved performance under monochromatic light compared to sunlight, makes them suitable as photovoltaic (PV) receivers in laser power beaming applications. Laser beamed power to a PV array receiver could provide power to satellites, an orbital transfer vehicle, or a lunar base. Gallium arsenide (GaAs) and indium phosphide (InP) solar cells have calculated efficiencies of more than 50 percent under continuous illumination at the optimum wavelength. Currently high power free-electron lasers are being developed which operate in pulsed conditions. Understanding cell behavior under a laser pulse is important in the selection of the solar cell material and the laser. An experiment by NAsA lewis and JPL at the AVLIS laser facility in Livermore, CA presented experimental data on cell performance under pulsed laser illumination. Reference 5 contains an overview of technical issues concerning the use of solar cells for laser power conversion, written before the experiments were performed. As the experimental results showed, the actual effects of pulsed operation are more complicated. Reference 6 discusses simulations of the output of GaAs concentrator solar cells under pulsed laser illumination. The present paper continues this work, and compares the output of Si and GaAs solar cells.

Sea spray aerosol as a unique source of ice nucleating particles.

PubMed

DeMott, Paul J; Hill, Thomas C J; McCluskey, Christina S; Prather, Kimberly A; Collins, Douglas B; Sullivan, Ryan C; Ruppel, Matthew J; Mason, Ryan H; Irish, Victoria E; Lee, Taehyoung; Hwang, Chung Yeon; Rhee, Tae Siek; Snider, Jefferson R; McMeeking, Gavin R; Dhaniyala, Suresh; Lewis, Ernie R; Wentzell, Jeremy J B; Abbatt, Jonathan; Lee, Christopher; Sultana, Camille M; Ault, Andrew P; Axson, Jessica L; Diaz Martinez, Myrelis; Venero, Ingrid; Santos-Figueroa, Gilmarie; Stokes, M Dale; Deane, Grant B; Mayol-Bracero, Olga L; Grassian, Vicki H; Bertram, Timothy H; Bertram, Allan K; Moffett, Bruce F; Franc, Gary D

2016-05-24

Ice nucleating particles (INPs) are vital for ice initiation in, and precipitation from, mixed-phase clouds. A source of INPs from oceans within sea spray aerosol (SSA) emissions has been suggested in previous studies but remained unconfirmed. Here, we show that INPs are emitted using real wave breaking in a laboratory flume to produce SSA. The number concentrations of INPs from laboratory-generated SSA, when normalized to typical total aerosol number concentrations in the marine boundary layer, agree well with measurements from diverse regions over the oceans. Data in the present study are also in accord with previously published INP measurements made over remote ocean regions. INP number concentrations active within liquid water droplets increase exponentially in number with a decrease in temperature below 0 °C, averaging an order of magnitude increase per 5 °C interval. The plausibility of a strong increase in SSA INP emissions in association with phytoplankton blooms is also shown in laboratory simulations. Nevertheless, INP number concentrations, or active site densities approximated using "dry" geometric SSA surface areas, are a few orders of magnitude lower than corresponding concentrations or site densities in the surface boundary layer over continental regions. These findings have important implications for cloud radiative forcing and precipitation within low-level and midlevel marine clouds unaffected by continental INP sources, such as may occur over the Southern Ocean.

Sea spray aerosol as a unique source of ice nucleating particles

PubMed Central

DeMott, Paul J.; Hill, Thomas C. J.; McCluskey, Christina S.; Prather, Kimberly A.; Ruppel, Matthew J.; Mason, Ryan H.; Irish, Victoria E.; Lee, Taehyoung; Hwang, Chung Yeon; Snider, Jefferson R.; McMeeking, Gavin R.; Dhaniyala, Suresh; Lewis, Ernie R.; Wentzell, Jeremy J. B.; Abbatt, Jonathan; Lee, Christopher; Sultana, Camille M.; Ault, Andrew P.; Axson, Jessica L.; Diaz Martinez, Myrelis; Venero, Ingrid; Santos-Figueroa, Gilmarie; Stokes, M. Dale; Deane, Grant B.; Mayol-Bracero, Olga L.; Grassian, Vicki H.; Bertram, Timothy H.; Bertram, Allan K.; Moffett, Bruce F.; Franc, Gary D.

2016-01-01

Ice nucleating particles (INPs) are vital for ice initiation in, and precipitation from, mixed-phase clouds. A source of INPs from oceans within sea spray aerosol (SSA) emissions has been suggested in previous studies but remained unconfirmed. Here, we show that INPs are emitted using real wave breaking in a laboratory flume to produce SSA. The number concentrations of INPs from laboratory-generated SSA, when normalized to typical total aerosol number concentrations in the marine boundary layer, agree well with measurements from diverse regions over the oceans. Data in the present study are also in accord with previously published INP measurements made over remote ocean regions. INP number concentrations active within liquid water droplets increase exponentially in number with a decrease in temperature below 0 °C, averaging an order of magnitude increase per 5 °C interval. The plausibility of a strong increase in SSA INP emissions in association with phytoplankton blooms is also shown in laboratory simulations. Nevertheless, INP number concentrations, or active site densities approximated using “dry” geometric SSA surface areas, are a few orders of magnitude lower than corresponding concentrations or site densities in the surface boundary layer over continental regions. These findings have important implications for cloud radiative forcing and precipitation within low-level and midlevel marine clouds unaffected by continental INP sources, such as may occur over the Southern Ocean. PMID:26699469

Ice Nucleating Particles around the world - a global review

NASA Astrophysics Data System (ADS)

Kanji, Zamin A.; Atkinson, James; Sierau, Berko; Lohmann, Ulrike

2017-04-01

In the atmosphere the formation of new ice particles at temperatures above -36 °C is due to a subset of aerosol called Ice Nucleating Particles (INP). However, the spatial and temporal evolution of such particles is poorly understood. Current modelling of INP is attempting to estimate the sources and transport of INP, but is hampered by the availability and convenience of INP observations. As part of the EU FP7 project impact of Biogenic versus Anthropogenic emissions on Clouds and Climate: towards a Holistic UnderStanding (BACCHUS), historical and contemporary observations of INP have been collated into a database (http://www.bacchus-env.eu/in/) and are reviewed here. Outside of Europe and North America the coverage of measurements is sparse, especially for modern day climate - in many areas the only measurements available are from the mid-20th century. As well as an overview of all the data in the database, correlations with several accompanying variables are presented. For example, immersion freezing INP seem to be negatively correlated with altitude, whereas CFDC based condensation freezing INP show no height correlation. An initial global parameterisation of INP concentrations taking into account freezing temperature and relative humidity for use in modelling is provided.

Ice nucleation active particles are efficiently removed by precipitating clouds.

PubMed

Stopelli, Emiliano; Conen, Franz; Morris, Cindy E; Herrmann, Erik; Bukowiecki, Nicolas; Alewell, Christine

2015-11-10

Ice nucleation in cold clouds is a decisive step in the formation of rain and snow. Observations and modelling suggest that variations in the concentrations of ice nucleating particles (INPs) affect timing, location and amount of precipitation. A quantitative description of the abundance and variability of INPs is crucial to assess and predict their influence on precipitation. Here we used the hydrological indicator δ(18)O to derive the fraction of water vapour lost from precipitating clouds and correlated it with the abundance of INPs in freshly fallen snow. Results show that the number of INPs active at temperatures ≥ -10 °C (INPs-10) halves for every 10% of vapour lost through precipitation. Particles of similar size (>0.5 μm) halve in number for only every 20% of vapour lost, suggesting effective microphysical processing of INPs during precipitation. We show that INPs active at moderate supercooling are rapidly depleted by precipitating clouds, limiting their impact on subsequent rainfall development in time and space.

Unit cell parameters of wurtzite InP nanowires determined by x-ray diffraction.

PubMed

Kriegner, D; Wintersberger, E; Kawaguchi, K; Wallentin, J; Borgström, M T; Stangl, J

2011-10-21

High resolution x-ray diffraction is used to study the structural properties of the wurtzite polytype of InP nanowires. Wurtzite InP nanowires are grown by metal-organic vapor phase epitaxy using S-doping. From the evaluation of the Bragg peak position we determine the lattice parameters of the wurtzite InP nanowires. The unit cell dimensions are found to differ from the ones expected from geometric conversion of the cubic bulk InP lattice constant. The atomic distances along the c direction are increased whereas the atomic spacing in the a direction is reduced in comparison to the corresponding distances in the zinc-blende phase. Using core/shell nanowires with a thin core and thick nominally intrinsic shells we are able to determine the lattice parameters of wurtzite InP with a negligible influence of the S-doping due to the much larger volume in the shell. The determined material properties will enable the ab initio calculation of electronic and optical properties of wurtzite InP nanowires.

Approaching conversion limit with all-dielectric solar cell reflectors.

PubMed

Fu, Sze Ming; Lai, Yi-Chun; Tseng, Chi Wei; Yan, Sheng Lun; Zhong, Yan Kai; Shen, Chang-Hong; Shieh, Jia-Min; Li, Yu-Ren; Cheng, Huang-Chung; Chi, Gou-chung; Yu, Peichen; Lin, Albert

2015-02-09

Metallic back reflectors has been used for thin-film and wafer-based solar cells for very long time. Nonetheless, the metallic mirrors might not be the best choices for photovoltaics. In this work, we show that solar cells with all-dielectric reflectors can surpass the best-configured metal-backed devices. Theoretical and experimental results all show that superior large-angle light scattering capability can be achieved by the diffuse medium reflectors, and the solar cell J-V enhancement is higher for solar cells using all-dielectric reflectors. Specifically, the measured diffused scattering efficiency (D.S.E.) of a diffuse medium reflector is >0.8 for the light trapping spectral range (600nm-1000nm), and the measured reflectance of a diffuse medium can be as high as silver if the geometry of embedded titanium oxide(TiO(2)) nanoparticles is optimized. Moreover, the diffuse medium reflectors have the additional advantage of room-temperature processing, low cost, and very high throughput. We believe that using all-dielectric solar cell reflectors is a way to approach the thermodynamic conversion limit by completely excluding metallic dissipation.

Long periods (1 -10 mHz) geomagnetic pulsations variation with solar cycle in South Atlantic Magnetic Anomaly

NASA Astrophysics Data System (ADS)

Rigon Silva, Willian; Schuch, Nelson Jorge; Guimarães Dutra, Severino Luiz; Babulal Trivedi, Nalin; Claudir da Silva, Andirlei; Souza Savian, Fernando; Ronan Coelho Stekel, Tardelli; de Siqueira, Josemar; Espindola Antunes, Cassio

The occurrence and intensity of the geomagnetic pulsations Pc-5 (2-7 mHz) and its relationship with the solar cycle in the South Atlantic Magnetic Anomaly -SAMA is presented. The study of geomagnetic pulsations is important to help the understanding of the physical processes that occurs in the magnetosphere region and help to predict geomagnetic storms. The fluxgate mag-netometers H, D and Z, three axis geomagnetic field data from the Southern Space Observatory -SSO/CRS/INPE -MCT, São Martinho da Serra (29.42° S, 53.87° W, 480m a.s.l.), RS, Brasil, a were analyzed and correlated with the solar wind parameters (speed, density and temperature) from the ACE and SOHO satellites. A digital filtering to enhance the 2-7 mHz geomagnetic pulsations was used. Five quiet days and five perturbed days in the solar minimum and in the solar maximum were selected for this analysis. The days were chosen based on the IAGA definition and on the Bartels Musical Diagrams (Kp index) for 2001 (solar maximum) and 2008 (solar minimum). The biggest Pc-5 amplitude averages differences between the H-component is 78,35 nT for the perturbed days and 1,60nT for the quiet days during the solar maximum. For perturbed days the average amplitude during the solar minimum is 8,32 nT, confirming a direct solar cycle influence in the geomagnetic pulsations intensity for long periods.

State Space Consistency and Differentiability Conditions for a Class of Causal Dynamical Input-Output Systems

DTIC Science & Technology

2008-01-01

1 0 MX i1; ;in=1 f i1; ; inp (1; ; n)ui1(t 1) uin(t n)d1; ; dn : The above sum is taken over all combinations without...repeating; hence, there are Mn terms. Such an operator is unchanged if the kernels f i1; ; inp , all p and n are symmetrized. The sym- metrized kernel...of f i1; ; inp , denoted by ef i1; ; inp , is de�ned by ef i1; ; inp (1; ; n) = 1n!X f i(1); ;i(n) p ((1); ; (n

New mounting improves solar-cell efficiency

NASA Technical Reports Server (NTRS)

Shepard, N. F., Jr.

1980-01-01

Method boosts output by about 20 percent by trapping and redirecting solar radiation without increasing module depth. Mounted solar-cell array is covered with internally reflecting plate. Plate is attached to each cell by transparent adhesive, and space between cells is covered with layer of diffusely reflecting material. Solar energy falling on space between cells is diffused and reflected internally by plate until it is reflected onto solar cell.

Recent advances in the ITO/InP solar cell

NASA Technical Reports Server (NTRS)

Gessert, T. A.; Li, X.; Wanlass, M. W.; Coutts, T. J.

1991-01-01

It was demonstrated that Indium Tin Oxide (ITO)/InP solar cells can now be made on as-received p(-) bulk substrates which are of nearly equal quality to those which could previously only be made on epitaxially grown p(-) InP base layers. Although this advancement is due in part to both increases in substrate quality and a better understanding of back contact formation, it appears that the passivation/compensation effects resulting from having H2 in the sputtering gas tends to reduce significantly the performance differences previously observed between these two substrates. It is shown that since high efficiency ITO/InP cells can be made from as-received substrates, and since the type conversion process is not highly spatially dependent, large area ITO/InP cells (4 sq cm) with efficiencies approaching 17 percent (Global) can be made. Furthermore, the measured open circuit voltages (V sub OC) and quantum efficiencies (QEs) from these large cells suggest that, when they are processed using optimum grid designs, the efficiencies will be nearly equal to that of the smaller cells thus far produced. It has been shown, through comparative experiments involving ITO/InP and IO/InP cells, that Sn may not be the major cause of type conversion of the InP surface and thus further implies that the ITO may not be an essential element in this type of device. Specifically, very efficient photovoltaic solar cells were made by sputtering (Sn free) In2O3 showing that type conversion and subsequent junction formation will occur even in the absence of the sputtered SN species. The result suggests that sputter damage may indeed be the important mechanism(s) of type conversion. Finally, an initial study of the stability of the ITO/InP cell done over the course of about one year has indicated that the J(sub SC) (short circuit current) and the fill factor (FF) are measurably stable within experimental certainty.

The acute effects of lower limb intermittent negative pressure on foot macro- and microcirculation in patients with peripheral arterial disease.

PubMed

Sundby, Øyvind Heiberg; Høiseth, Lars Øivind; Mathiesen, Iacob; Weedon-Fekjær, Harald; Sundhagen, Jon O; Hisdal, Jonny

2017-01-01

Intermittent negative pressure (INP) applied to the lower leg and foot increases foot perfusion in healthy volunteers. The aim of the present study was to describe the effects of INP to the lower leg and foot on foot macro- and microcirculation in patients with lower extremity peripheral arterial disease (PAD). In this experimental study, we analyzed foot circulation during INP in 20 patients [median (range): 75 (63-84yrs)] with PAD. One leg was placed inside an air-tight vacuum chamber connected to an INP-generator. During application of INP (alternating 10s of -40mmHg/7s of atmospheric pressure), we continuously recorded blood flow velocity in a distal foot artery (ultrasound Doppler), skin blood flow on the pulp of the first toes (laser Doppler), heart rate (ECG), and systemic blood pressure (Finometer). After a 5-min baseline sequence (no pressure), a 10-min INP sequence was applied, followed by 5-min post-INP (no pressure). To compare and quantify blood flow fluctuations between sequences, we calculated cumulative up-and-down fluctuations in arterial blood flow velocity per minute. Onset of INP induced an increase in arterial flow velocity and skin blood flow. Peak blood flow velocity was reached 3s after the onset of negative pressure, and increased 46% [(95% CI 36-57), P<0.001] above baseline. Peak skin blood flow was reached 2s after the onset of negative pressure, and increased 89% (95% CI 48-130), P<0.001) above baseline. Cumulative fluctuations per minute were significantly higher during INP-sequences compared to baseline [21 (95% CI 12-30)cm/s/min to 41 (95% CI 32-51)cm/s/min, P<0.001]. Mean INP blood flow velocity increased significantly ~12% above mean baseline blood flow velocity [(6.7 (95% CI 5.2-8.3)cm/s to 7.5 (95% CI 5.9-9.1)cm/s, P = 0.03)]. INP increases foot macro- and microcirculatory flow pulsatility in patients with PAD. Additionally, application of INP resulted in increased mean arterial blood flow velocity.

The acute effects of lower limb intermittent negative pressure on foot macro- and microcirculation in patients with peripheral arterial disease

PubMed Central

Høiseth, Lars Øivind; Mathiesen, Iacob; Weedon-Fekjær, Harald; Sundhagen, Jon O.; Hisdal, Jonny

2017-01-01

Background Intermittent negative pressure (INP) applied to the lower leg and foot increases foot perfusion in healthy volunteers. The aim of the present study was to describe the effects of INP to the lower leg and foot on foot macro- and microcirculation in patients with lower extremity peripheral arterial disease (PAD). Methods In this experimental study, we analyzed foot circulation during INP in 20 patients [median (range): 75 (63-84yrs)] with PAD. One leg was placed inside an air-tight vacuum chamber connected to an INP-generator. During application of INP (alternating 10s of -40mmHg/7s of atmospheric pressure), we continuously recorded blood flow velocity in a distal foot artery (ultrasound Doppler), skin blood flow on the pulp of the first toes (laser Doppler), heart rate (ECG), and systemic blood pressure (Finometer). After a 5-min baseline sequence (no pressure), a 10-min INP sequence was applied, followed by 5-min post-INP (no pressure). To compare and quantify blood flow fluctuations between sequences, we calculated cumulative up-and-down fluctuations in arterial blood flow velocity per minute. Results Onset of INP induced an increase in arterial flow velocity and skin blood flow. Peak blood flow velocity was reached 3s after the onset of negative pressure, and increased 46% [(95% CI 36–57), P<0.001] above baseline. Peak skin blood flow was reached 2s after the onset of negative pressure, and increased 89% (95% CI 48–130), P<0.001) above baseline. Cumulative fluctuations per minute were significantly higher during INP-sequences compared to baseline [21 (95% CI 12–30)cm/s/min to 41 (95% CI 32–51)cm/s/min, P<0.001]. Mean INP blood flow velocity increased significantly ~12% above mean baseline blood flow velocity [(6.7 (95% CI 5.2–8.3)cm/s to 7.5 (95% CI 5.9–9.1)cm/s, P = 0.03)]. Conclusion INP increases foot macro- and microcirculatory flow pulsatility in patients with PAD. Additionally, application of INP resulted in increased mean arterial blood flow velocity. PMID:28591174

Contribution of feldspar and marine organic aerosols to global ice nucleating particle concentrations

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vergara-Temprado, Jesús; Murray, Benjamin J.; Wilson, Theodore W.

Ice-nucleating particles (INPs) are known to affect the amount of ice in mixed-phase clouds, thereby influencing many of their properties. The atmospheric INP concentration changes by orders of magnitude from terrestrial to marine environments, which typically contain much lower concentrations. Many modelling studies use parameterizations for heterogeneous ice nucleation and cloud ice processes that do not account for this difference because they were developed based on INP measurements made predominantly in terrestrial environments without considering the aerosol composition. Errors in the assumed INP concentration will influence the simulated amount of ice in mixed-phase clouds, leading to errors in top-of-atmosphere radiativemore » flux and ultimately the climate sensitivity of the model. Here we develop a global model of INP concentrations relevant for mixed-phase clouds based on laboratory and field measurements of ice nucleation by K-feldspar (an ice-active component of desert dust) and marine organic aerosols (from sea spray). The simulated global distribution of INP concentrations based on these two species agrees much better with currently available ambient measurements than when INP concentrations are assumed to depend only on temperature or particle size. Underestimation of INP concentrations in some terrestrial locations may be due to the neglect of INPs from other terrestrial sources. Our model indicates that, on a monthly average basis, desert dusts dominate the contribution to the INP population over much of the world, but marine organics become increasingly important over remote oceans and they dominate over the Southern Ocean. However, day-to-day variability is important. Because desert dust aerosol tends to be sporadic, marine organic aerosols dominate the INP population on many days per month over much of the mid- and high-latitude Northern Hemisphere. This study advances our understanding of which aerosol species need to be included in order to adequately describe the global and regional distribution of INPs in models, which will guide ice nucleation researchers on where to focus future laboratory and field work.« less

Direct-to-diffuse UV Solar Irradiance Ratio for a UV rotating Shadowband Spectroradiometer and a UV Multi-filter Rotating Shadowband Radiometer

NASA Astrophysics Data System (ADS)

Lantz, K.; Kiedron, P.; Petropavlovskikh, I.; Michalsky, J.; Slusser, J.

2008-12-01

. Two spectroradiometers reside that measure direct and diffuse UV solar irradiance are located at the Table Mountain Test Facility, 8 km north of Boulder, CO. The UV- Rotating Shadowband Spectrograph (UV-RSS) measures diffuse and direct solar irradiance from 290 - 400 nm. The UV Multi-Filter Rotating Shadowband Radiometer (UV-MFRSR) measures diffuse and direct solar irradiance in seven 2-nm wide bands, i.e. 300, 305, 311, 317, 325, and 368 nm. The purpose of the work is to compare radiative transfer model calculations (TUV) with the results from the UV-Rotating Shadowband Spectroradiometer (UV-RSS) and the UV-MFRSR to estimate direct-to-diffuse solar irradiance ratios (DDR) that are used to evaluate the possibility of retrieving aerosol single scattering albedo (SSA) under a variety of atmospheric conditions: large and small aerosol loading, large and small surface albedo. For the radiative transfer calculations, total ozone measurements are obtained from a collocated Brewer spectrophotometer.

Ice nucleating particles in the high Arctic at the beginning of the melt season

NASA Astrophysics Data System (ADS)

Hartmann, M.; Gong, X.; Van Pinxteren, M.; Welti, A.; Zeppenfeld, S.; Herrmann, H.; Stratmann, F.

2017-12-01

Ice nucleating particles (INPs) initiate the ice crystal formation in persistent Arctic mixed-phase clouds and are important for the formation of precipitation, which affects the radiative properties of the Arctic pack ice as well as the radiative properties of clouds. Sources of Arctic INP have been suggested to be local emissions from the marine boundary and long-range transport. To what extent local marine sources contribute to the INP population or if the majority of INPs originate from long-range transport is not yet known. Ship-based INP measurements in the PASCAL framework are reported. The field campaign took place from May 24 to July 20 2017 around and north of Svalbard (up to 84°N, between 0° and 35°E) onboard the RV Polarstern. INP concentrations were determined applying in-situ measurements (DMT Spectrometer for Ice Nuclei, SPIN) and offline filter techniques (filter sampling on both quartz fiber and polycarbonate filters with subsequent analysis of filter pieces and water suspension from particles collected on filters by means of immersion freezing experiments on cold stage setups). Additionally the compartments sea-surface micro layer (SML), bulk sea water, snow, sea ice and fog water were sampled and their ice nucleation potential quantified, also utilizing cold stages. The measurements yield comprehensive picture of the spatial and temporal distribution of INPs around Svalbard for the different compartments. The dependence of the INP concentration on meteorological conditions (e.g. wind speed) and the geographical situation (sea ice cover, distance to the ice edge) are investigated. Potential sources of INP are identified by the comparison of INP concentrations in the compartments and by back trajectory analysis.

Measurement of Ice-nucleating Particles over the Western North Pacific, Bering Sea, and Arctic Ocean during a R/V Mirai Cruise in 2016

NASA Astrophysics Data System (ADS)

Murata, K.; Tobo, Y.; Taketani, F.; Miyakawa, T.; Kanaya, Y.

2017-12-01

Measurement of ice-nucleating particles (INPs) was performed using aerosol samples collected during a cruise of R/V Mirai across the western North Pacific, Bering Sea, and Arctic Ocean from August to October, 2016. We used the National Institute of Polar Research Cryogenic Refrigerator Applied to Freezing Test (NIPR-CRAFT) device to examine the immersion freezing efficiency of the collected aerosols in the temperature range of -25°C to 0°C and measured the number concentration of atmospheric INPs. The INP concentrations varied over about three orders of magnitude during the cruise. Over the Arctic Ocean (i.e., >70°N), the INPs were <0.08 L-1. In comparison with the Arctic Ocean, INPs were abundant over the Bering Sea and western North Pacific; 0.03-5.5 L-1 during the first half leg and 0.3-41 L-1 during the returning leg. According to on-board measurement of black carbon concentrations and model simulations, extremely high concentrations of INPs during the returning leg would be attributed to transport of smoke from fires in Siberia. Different INP concentrations during the cruise indicates that INPs in marine air can vary dramatically in response to long-range transport of continental aerosols, such as smoke, in addition to local emissions from the sea surface. The observed concentrations of INPs were reasonably well expressed by power law fits with the number concentration of fluorescent biological aerosol particles simultaneously measured with a Waveband Integrated Bioaerosol Sensor (WIBS-4) during the cruise, which suggests that biological aerosol particles may play a role in determining INP populations in the marine air of this case.

The Role of Education and Training Programs in the Commercialization and Diffusion of Solar Energy Technologies.

ERIC Educational Resources Information Center

Burns, Barbara; And Others

The solar energy labor force is analyzed by identifying the importance of education and training in the commercialization and diffusion of solar technologies, discussing issues for planning and analysis of solar education and training efforts, and illustrating the range of programs and courses presently available. Four general perspectives are…

Exploring the effective photon management by InP nanoparticles: Broadband light absorption enhancement of InP/In{sub 0.53}Ga{sub 0.47}As/InP thin-film photodetectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fu, Dong; Zhu, Xi; Li, Jian

2015-05-28

High-index dielectric and semiconductor nanoparticles with the characteristics of low absorption loss and strong scattering have attracted more and more attention for improving performance of thin-film photovoltaic devices. In this paper, we focus our attention on InP nanoparticles and study the influence of the substrate and the geometrical configurations on their scattering properties. We demonstrate that, compared with the InP sphere, the InP cylinder has higher coupling efficiency due to the stronger interactions between the optical mode in the nanoparticle and its induced mirror image in the substrate. Moreover, we propose novel thin-film InGaAs photodetectors integrated with the periodically arrangedmore » InP nanoparticles on the substrate. Broadband light absorption enhancement is achieved over the wavelength range between 1.0 μm and 1.7 μm. The highest average absorption enhancement of 59.7% is realized for the photodetector with the optimized cylinder InP nanoparticles. These outstanding characteristics attribute to the preferentially forward scattering of single InP nanoparticle along with the effective coupling of incident light into the guided modes through the collective diffraction effect of InP nanoparticles array.« less

Mechanisms limiting the performance of large grain polycrystalline silicon solar cells

NASA Technical Reports Server (NTRS)

Culik, J. S.; Alexander, P.; Dumas, K. A.; Wohlgemuth, J. W.

1984-01-01

The open-circuit voltage and short-circuit current of large-grain (1 to 10 mm grain diameter) polycrystalline silicon solar cells is determined by the minority-carrier diffusion length within the bulk of the grains. This was demonstrated by irradiating polycrystalline and single-crystal (Czochralski) silicon solar cells with 1 MeV electrons to reduce their bulk lifetime. The variation of short-circuit current with minority-carrier diffusion length for the polycrystalline solar cells is identical to that of the single-crystal solar cells. The open-circuit voltage versus short-circuit current characteristic of the polycrystalline solar cells for reduced diffusion lengths is also identical to that of the single-crystal solar cells. The open-circuit voltage of the polycrystalline solar cells is a strong function of quasi-neutral (bulk) recombination, and is reduced only slightly, if at all, by grain-boundary recombination.

Terahertz Difference-Frequency Quantum Cascade Laser Sources on Silicon

DTIC Science & Technology

2016-12-22

temperature. The introduction of the Cherenkov waveguide scheme in these devices grown on semi- insulating InP substrates enabled generation of tens...room temperature, a factor of 5 improvement over the best reference devices on a native semi- insulating InP substrate. © 2016 Optical Society of America...implementation of the Cherenkov emission scheme [10]. Cherenkov THz DFG-QCLs reported so far use a semi- insulating (SI) InP substrate. SI InP

Young's Modulus of Wurtzite and Zinc Blende InP Nanowires.

PubMed

Dunaevskiy, Mikhail; Geydt, Pavel; Lähderanta, Erkki; Alekseev, Prokhor; Haggrén, Tuomas; Kakko, Joona-Pekko; Jiang, Hua; Lipsanen, Harri

2017-06-14

The Young's modulus of thin conical InP nanowires with either wurtzite or mixed "zinc blende/wurtzite" structures was measured. It has been shown that the value of Young's modulus obtained for wurtzite InP nanowires (E [0001] = 130 ± 30 GPa) was similar to the theoretically predicted value for the wurtzite InP material (E [0001] = 120 ± 10 GPa). The Young's modulus of mixed "zinc blende/wurtzite" InP nanowires (E [111] = 65 ± 10 GPa) appeared to be 40% less than the theoretically predicted value for the zinc blende InP material (E [111] = 110 GPa). An advanced method for measuring the Young's modulus of thin and flexible nanostructures is proposed. It consists of measuring the flexibility (the inverse of stiffness) profiles 1/k(x) by the scanning probe microscopy with precise control of loading force in nanonewton range followed by simulations.

Band Offsets and Interfacial Properties of HfAlO Gate Dielectric Grown on InP by Atomic Layer Deposition.

PubMed

Yang, Lifeng; Wang, Tao; Zou, Ying; Lu, Hong-Liang

2017-12-01

X-ray photoelectron spectroscopy and high-resolution transmission electron microscopy have been used to determine interfacial properties of HfO 2 and HfAlO gate dielectrics grown on InP by atomic layer deposition. An undesirable interfacial InP x O y layer is easily formed at the HfO 2 /InP interface, which can severely degrade the electrical performance. However, an abrupt interface can be achieved when the growth of the HfAlO dielectric on InP starts with an ultrathin Al 2 O 3 layer. The valence and conduction band offsets for HfAlO/InP heterojunctions have been determined to be 1.87 ± 0.1 and 2.83 ± 0.1 eV, respectively. These advantages make HfAlO a potential dielectric for InP MOSFETs.

Variability of Solar Radiation under Cloud-Free Skies in China: The Role of Aerosols

NASA Technical Reports Server (NTRS)

Qian, Yun; Wang, Weiguo; Leung, L. ruby; Kaiser, Dale P.

2007-01-01

In this study, we analyzed long-term surface global and diffuse solar radiation, aerosol single scattering albedo (SSA), and relative humidity (RH) from China. Our analysis reveals that much of China experienced significant decreases in global solar radiation (GSR) and increases in diffuse solar radiation under cloud-free skies between the 1960s and 1980s. With RH and aerosol SSA being rather constant during that time period, we suggest that the increasing aerosol loading from emission of pollutants is responsible for the observed reduced GSR and increased diffuse radiation in cloud-free skies. Although pollutant emissions continue to increase after the 1980s, the increment of aerosol SSA since 1980s can partly explain the transition of GSR from a decreasing trend to no apparent trend around that time. Preliminary analysis is also provided on the potential role of RH in affecting the global and diffuse solar radiation reaching the earth surface.

Diffusion engineering of ions and charge carriers for stable efficient perovskite solar cells

NASA Astrophysics Data System (ADS)

Bi, Enbing; Chen, Han; Xie, Fengxian; Wu, Yongzhen; Chen, Wei; Su, Yanjie; Islam, Ashraful; Grätzel, Michael; Yang, Xudong; Han, Liyuan

2017-06-01

Long-term stability is crucial for the future application of perovskite solar cells, a promising low-cost photovoltaic technology that has rapidly advanced in the recent years. Here, we designed a nanostructured carbon layer to suppress the diffusion of ions/molecules within perovskite solar cells, an important degradation process in the device. Furthermore, this nanocarbon layer benefited the diffusion of electron charge carriers to enable a high-energy conversion efficiency. Finally, the efficiency on a perovskite solar cell with an aperture area of 1.02 cm2, after a thermal aging test at 85 °C for over 500 h, or light soaking for 1,000 h, was stable of over 15% during the entire test. The present diffusion engineering of ions/molecules and photo generated charges paves a way to realizing long-term stable and highly efficient perovskite solar cells.

Use of the Single Particle Soot Photometer (SP2) as a pre-filter for ice nucleation measurements: effect of particle mixing state and determination of SP2 conditions to fully vaporize refractory black carbon

NASA Astrophysics Data System (ADS)

Schill, Gregory P.; DeMott, Paul J.; Levin, Ezra J. T.; Kreidenweis, Sonia M.

2018-05-01

Ice nucleation is a fundamental atmospheric process that impacts precipitation, cloud lifetimes, and climate. Challenges remain to identify and quantify the compositions and sources of ice-nucleating particles (INPs). Assessment of the role of black carbon (BC) as an INP is particularly important due to its anthropogenic sources and abundance at upper-tropospheric cloud levels. The role of BC as an INP, however, is unclear. This is, in part, driven by a lack of techniques that directly determine the contribution of refractory BC (rBC) to INP concentrations. One previously developed technique to measure this contribution uses the Single Particle Soot Photometer (SP2) as a pre-filter to an online ice-nucleating particle counter. In this technique, rBC particles are selectively heated to their vaporization temperature in the SP2 cavity by a 1064 nm laser. From previous work, however, it is unclear under what SP2 conditions, if any, the original rBC particles were fully vaporized. Furthermore, previous work also left questions about the effect of the SP2 laser on the ice-nucleating properties of several INP proxies and their mixtures with rBC.To answer these questions, we sampled the exhaust of an SP2 with a Scanning Mobility Particle Sizer and a Continuous Flow Diffusion Chamber. Using Aquadag® as an rBC proxy, the effect of several SP2 instrument parameters on the size distribution and physical properties of particles in rBC SP2 exhaust were explored. We found that a high SP2 laser power (930 nW/(220 nm PSL)) is required to fully vaporize a ˜ 0.76 fg rBC particle. We also found that the exhaust particle size distribution is minimally affected by the SP2 sheath-to-sample ratio; the size of the original rBC particle, however, greatly influences the size distribution of the SP2 exhaust. The effect of the SP2 laser on the ice nucleation efficiency of Snomax®, NX-illite, and Suwannee River Fulvic Acid was studied; these particles acted as proxies for biological, illite-rich mineral dust, and brown carbon INPs, respectively. The original size distribution and ice nucleation efficiency of all non-rBC proxies were unaffected by the SP2 laser. Furthermore, the ice nucleation efficiencies of all proxies were not affected when externally mixed with rBC. These proxies, however, always show a reduction in ice-nucleating ability when internally mixed with rBC. We end this work with recommendations for users who wish to use the SP2 as a pre-filter to remove large rBC particles from an aerosol stream.

Light Absorbers and Catalysts for Solar to Fuel Conversion

NASA Astrophysics Data System (ADS)

Kornienko, Nikolay I.

Increasing fossil fuel consumption and the resulting consequences to the environment has propelled research into means of utilizing alternative, clean energy sources. Solar power is among the most promising of renewable energy sources but must be converted into an energy dense medium such as chemical bonds to render it useful for transport and energy storage. Photoelectrochemistry (PEC), the splitting of water into oxygen and hydrogen fuel or reducing CO 2 to hydrocarbon fuels via sunlight is a promising approach towards this goal. Photoelectrochemical systems are comprised of several components, including light absorbers and catalysts. These parts must all synergistically function in a working device. Therefore, the continual development of each component is crucial for the overall goal. For PEC systems to be practical for large scale use, the must be efficient, stable, and composed of cost effective components. To this end, my work focused on the development of light absorbing and catalyst components of PEC solar to fuel converting systems. In the direction of light absorbers, I focused of utilizing Indium Phosphide (InP) nanowires (NWs) as photocathodes. I first developed synthetic techniques for InP NW solution phase and vapor phase growth. Next, I developed light absorbing photocathodes from my InP NWs towards PEC water splitting cells. I studied cobalt sulfide (CoSx) as an earth abundant catalyst for the reductive hydrogen evolution half reaction. Using in situ spectroscopic techniques, I elucidated the active structure of this catalyst and offered clues to its high activity. In addition to hydrogen evolution catalysts, I established a new generation of earth abundant catalysts for CO2 reduction to CO fuel/chemical feedstock. I first worked with molecularly tunable homogeneous catalysts that exhibited high selectivity for CO2 reduction in non-aqueous media. Next, in order to retain molecular tunability while achieving stability and efficiency in aqueous solvents, I aimed to heterogenize a class of molecular porphyrin catalysts into a 3D mesoscopic porous catalytic structure in the form of a metal-organic framework (MOF). To do so, I initially developed a growth for thin film MOFs that were embedded with catalytic groups in their linkers. Next, I utilized these thin film MOFs grown on conductive substrates and functionalized with cobalt porphyrin units as 3D porous CO2 reduction catalysts. This new class of catalyst exhibited high efficiency, selectivity, and stability in neutral pH aqueous electrolytes. Finally, as a last chapter of my work, I explored hybrid inorganic/biological CO2 reduction pathways. Specifically, I used time-resolved spectroscopic and biochemical techniques to investigate charge transfer pathways from light absorber to CO2-derived acetate in acetogenic self-sensitized bacteria.

Sea spray aerosol as a unique source of ice nucleating particles

DOE PAGES

DeMott, Paul J.; Hill, Thomas C. J.; McCluskey, Christina S.; ...

2016-05-24

Ice nucleating particles (INPs) are vital for ice initiation in, and precipitation from, mixed-phase clouds. A source of INPs from oceans within sea spray aerosol (SSA) emissions has been suggested in previous studies but remained unconfirmed. Here, we show that INPs are emitted using real wave breaking in a laboratory flume to produce SSA. The number concentrations of INPs from laboratory-generated SSA, when normalized to typical total aerosol number concentrations in the marine boundary layer, agree well with measurements from diverse regions over the oceans. In addition, data in the present study are also in accord with previously published INPmore » measurements made over remote ocean regions. INP number concentrations active within liquid water droplets increase exponentially in number with a decrease in temperature below 0°C, averaging an order of magnitude increase per 5°C interval. The plausibility of a strong increase in SSA INP emissions in association with phytoplankton blooms is also shown in laboratory simulations. Nevertheless, INP number concentrations, or active site densities approximated using “dry” geometric SSA surface areas, are a few orders of magnitude lower than corresponding concentrations or site densities in the surface boundary layer over continental regions. Lastly, these findings have important implications for cloud radiative forcing and precipitation within low-level and midlevel marine clouds unaffected by continental INP sources, such as may occur over the Southern Ocean.« less

Ice nucleating particle concentration during a combustion aerosol event

NASA Astrophysics Data System (ADS)

Adams, Mike; O'Sullivan, Daniel; Porter, Grace; Sanchez-Marroquin, Alberto; Tarn, Mark; Harrison, Alex; McQuaid, Jim; Murray, Benjamin

2017-04-01

The formation of ice in supercooled clouds is important for cloud radiative properties, their lifetime and the formation of precipitation. Cloud water droplets can supercool to below -33oC, but in the presence of Ice Nucleating Particles (INPs) freezing can be initiated at much higher temperatures. The concentration of atmospheric aerosols that are active as INPs depends on a number of factors, such as temperature and aerosol composition and concentration. However, our knowledge of which aerosol types serve as INPs is limited. For example, there has been much discussion over whether aerosol from combustion processes are important as INP. This is significant because combustion aerosol have increased in concentration dramatically since pre-industrial times and therefore have the potential to exert a significant anthropogenic impact on clouds and climate. In this study we made measurements of INP concentrations in Leeds over a specific combustion aerosol event in order to test if there was a correlation between INP concentrations and combustion aerosol. The combustion aerosol event was on the 5th November which is a major bonfire and firework event celebrated throughout the UK. During the event we observed a factor of five increase in aerosol and a factor of 10 increase in black carbon, but observed no significant increase in INP concentration. This implies that black carbon and combustion aerosol did not compete with the background INP during this event.

Inventory of File gdas1.t06z.sfluxgrbf06.grib2

Science.gov Websites

hour ave Visible Diffuse Downward Solar Flux [W/m^2] 036 surface NBDSF 0-6 hour ave Near IR Beam Downward Solar Flux [W/m^2] 037 surface NDDSF 0-6 hour ave Near IR Diffuse Downward Solar Flux [W/m^2] 038

Inventory of File gfs.t06z.sfluxgrbf06.grib2

Science.gov Websites

hour ave Visible Diffuse Downward Solar Flux [W/m^2] 036 surface NBDSF 0-6 hour ave Near IR Beam Downward Solar Flux [W/m^2] 037 surface NDDSF 0-6 hour ave Near IR Diffuse Downward Solar Flux [W/m^2] 038

Optical investigation of InAs quantum dashes grown on InP(0 0 1) vicinal substrate

NASA Astrophysics Data System (ADS)

Besahraoui, F.; Bouslama, M.; Saidi, F.; Bouzaiene, L.; Hadj Alouane, M. H.; Maaref, H.; Chauvin, N.; Gendry, M.; Lounis, Z.; Ghaffour, M.

2014-01-01

We investigate with photoluminescence (PL) measurements the optoelectronic properties of self-organized InAs quantum dots (QDs) grown on nominal InP(0 0 1) substrate. InAs/InP(0 0 1) QDs are grown by Molecular Beam Epitaxy (MBE) method with optimized conditions in Stranski-Krastanov regime. A lateral coupling behavior was shown by photoluminescence spectroscopy. This phenomena is considered as a degradation source of the optoelectronic properties of InAs/InP(0 0 1) QDs used in lasers applications. In order to overcome this disadvantage behavior, we have studied the optical properties of InAs quantum islands (QIs) grown on vicinal InP(0 0 1) with 2° off miscut angle toward the [1 1 0] direction. From Polarized Photoluminescence (PPL) measurements, we have deduced that InAs quantum nanostructures have quantum dashes (QDas) form elongated in [1-10] direction. From excitation density PL measurements, we have evidenced that the different observed PL peaks are attributed to the emission of InAs QDas of different size. The lateral coupling behavior is completely eliminated in the case of this sample. The temperature-dependent PL measurements show a good thermal stability and an emission wavelength at room temperature around 1.55 μm of the vicinal sample. All these properties prove that this sample possess favorable characteristics for microlasers based devices functioning at room temperature and for optical telecommunication with long range weapon. The broad emission range observed at 300 K of the vicinal sample gives the possibility to use it as an active zone in solar cells and in infrared photodectectors of high optical gain and excellent sensitivity on a wide energy range.

Interfacial charge separation and recombination in InP and quasi-type II InP/CdS core/shell quantum dot-molecular acceptor complexes.

PubMed

Wu, Kaifeng; Song, Nianhui; Liu, Zheng; Zhu, Haiming; Rodríguez-Córdoba, William; Lian, Tianquan

2013-08-15

Recent studies of group II-VI colloidal semiconductor heterostuctures, such as CdSe/CdS core/shell quantum dots (QDs) or dot-in-rod nanorods, show that type II and quasi-type II band alignment can facilitate electron transfer and slow down charge recombination in QD-molecular electron acceptor complexes. To explore the general applicability of this wave function engineering approach for controlling charge transfer properties, we investigate exciton relaxation and dissociation dynamics in InP (a group III-V semiconductor) and InP/CdS core/shell (a heterostructure beween group III-V and II-VI semiconductors) QDs by transient absorption spectroscopy. We show that InP/CdS QDs exhibit a quasi-type II band alignment with the 1S electron delocalized throughout the core and shell and the 1S hole confined in the InP core. In InP-methylviologen (MV(2+)) complexes, excitons in the QD can be dissociated by ultrafast electron transfer to MV(2+) from the 1S electron level (with an average time constant of 11.4 ps) as well as 1P and higher electron levels (with a time constant of 0.39 ps), which is followed by charge recombination to regenerate the complex in its ground state (with an average time constant of 47.1 ns). In comparison, InP/CdS-MV(2+) complexes show similar ultrafast charge separation and 5-fold slower charge recombination rates, consistent with the quasi-type II band alignment in these heterostructures. This result demonstrates that wave function engineering in nanoheterostructures of group III-V and II-VI semiconductors provides a promising approach for optimizing their light harvesting and charge separation for solar energy conversion applications.

Thermodynamic and Dynamic Aspects of Ice Nucleation

NASA Technical Reports Server (NTRS)

Barahona, Donifan

2018-01-01

It is known that ice nucleating particles (INP) immersed within supercooled droplets promote the formation of ice. Common theoretical models used to represent this process assume that the immersed particle lowers the work of ice nucleation without significantly affecting the dynamics of water in the vicinity of the particle. This is contrary to evidence showing that immersed surfaces significantly affect the viscosity and diffusivity of vicinal water. To study how this may affect ice formation this work introduces a model linking the ice nucleation rate to the modification of the dynamics and thermodynamics of vicinal water by immersed particles. It is shown that INP that significantly reduce the work of ice nucleation also pose strong limitations to the growth of the nascent ice germs. This leads to the onset of a new ice nucleation regime, called spinodal ice nucleation, where the dynamics of ice germ growth instead of the ice germ size determines the nucleation rate. Nucleation in this regime is characterized by an enhanced sensitivity to particle area and cooling rate. Comparison of the predicted ice nucleation rate against experimental measurements for a diverse set of species relevant to cloud formation suggests that spinodal ice nucleation may be common in nature.

Modeling of InP metalorganic chemical vapor deposition

NASA Technical Reports Server (NTRS)

Black, Linda R.; Clark, Ivan O.; Kui, J.; Jesser, William A.

1991-01-01

The growth of InP by metalorganic chemical vapor deposition (MOCVD) in a horizontal reactor is being modeled with a commercially available computational fluid dynamics modeling code. The mathematical treatment of the MOCVD process has four primary areas of concern: 1) transport phenomena, 2) chemistry, 3) boundary conditions, and 4) numerical solution methods. The transport processes involved in CVD are described by conservation of total mass, momentum, energy, and atomic species. Momentum conservation is described by a generalized form of the Navier-Stokes equation for a Newtonian fluid and laminar flow. The effect of Soret diffusion on the transport of particular chemical species and on the predicted deposition rate is examined. Both gas-phase and surface chemical reactions are employed in the model. Boundary conditions are specified at the inlet and walls of the reactor for temperature, fluid flow and chemical species. The coupled set of equations described above is solved by a finite difference method over a nonuniform rectilinear grid in both two and three dimensions. The results of the 2-D computational model is presented for gravity levels of zero- and one-g. The predicted growth rates at one-g are compared to measured growth rates on fused silica substrates.

Laser doping of boron-doped Si paste for high-efficiency silicon solar cells

NASA Astrophysics Data System (ADS)

Tomizawa, Yuka; Imamura, Tetsuya; Soeda, Masaya; Ikeda, Yoshinori; Shiro, Takashi

2015-08-01

Boron laser doping (LD) is a promising technology for high-efficiency solar cells such as p-type passivated locally diffused solar cells and n-type Si-wafer-based solar cells. We produced a printable phosphorus- or boron-doped Si paste (NanoGram® Si paste/ink) for use as a diffuser in the LD process. We used the boron LD process to fabricate high-efficiency passivated emitter and rear locally diffused (PERL) solar cells. PERL solar cells on Czochralski Si (Cz-Si) wafers yielded a maximum efficiency of 19.7%, whereas the efficiency of a reference cell was 18.5%. Fill factors above 79% and open circuit voltages above 655 mV were measured. We found that the boron-doped area effectively performs as a local boron back surface field (BSF). The characteristics of the solar cell formed using NanoGram® Si paste/ink were better than those of the reference cell.

Near Field Imaging of Gallium Nitride Nanowires for Characterization of Minority Carrier Diffusion

DTIC Science & Technology

2009-12-01

diffusion length in nanowires is critical to potential applications in solar cells , spectroscopic sensing, and/or lasers and light emitting diodes (LED...technique has been successfully demonstrated with thin film solar cell materials [4, 5]. In these experiments, the diffusion length was measured using a...minority carrier diffusion length . This technique has been used in the near-field collection mode to image the diffusion of holes in n-type GaN

Landscape-precipitation feedback mediated by ice nuclei: an example from the Arctic

NASA Astrophysics Data System (ADS)

Stopelli, Emiliano; Conen, Franz; Zimmermann, Lukas; Morris, Cindy; Alewell, Christine

2016-04-01

The Arctic is one of the regions on Earth which are particularly sensitive to the effects of climate change. One of the largest uncertainties in describing climate and climate change is constituted by the characterisation of the behaviour of clouds. Specifically in the Arctic region there is a low abundance of cloud condensation nuclei (CCN) resulting in low droplet concentrations in clouds. Ice nucleating particles (INPs) in the atmosphere promote the aggregation of water molecules into ice, increasing the chance for precipitation. Therefore, a change in the absolute abundance of INPs and their relative presence compared to CCN is expected to have strong impacts on climate in the Arctic in terms of the radiative budget and of precipitation. In July 2015 we sampled particles from air at Haldde Observatory, Norway (69° 55'45" N, 22° 48'30" E, 905 m a.s.l.) on PM10 filters. We determined the number of INPs active at moderate supercooling temperatures (≥ -15 ° C, INPs-15) by immersion freezing. To identify potential sources of airborne INPs we also collected samples of soil from a highland and decaying leaf litter. Air masses passing over the land were enriched in INPs-15, with concentrations twice to three times larger than those found in air masses directly coming from the Barents Sea. Ice nucleation spectra suggest that it is mainly litter which accounts for this enrichment in INPs-15. This example helps elucidating the feedback linking landscapes and atmosphere mediated by INPs in the frame of climate change. While the snow coverage is progressively reducing in the Arctic, areas with decaying leaf litter and vegetation that are exposed to wind and grazing are expected to increase, resulting into a larger abundance of INPs in the local atmosphere. This increase in airborne INPs can promote a change in the freezing of clouds, with impact on the lifetime and on the radiative properties of clouds, and ultimately on the occurrence of precipitation in the Arctic region.

Characterization of Ice Nucleating Particles at the Western US Coast

NASA Astrophysics Data System (ADS)

Rocci, K.; McCluskey, C. S.; Hill, T. C. J.; DeMott, P. J.; Kreidenweis, S. M.

2015-12-01

In temperate climates, ice nucleating particles (INPs) are vital for precipitation initiation. Because INPs may affect precipitation efficiency, and thereby the supply of water resources, it is paramount to have a clear understanding of both natural and anthropogenic sources of INPs. This is especially important to understand in California where drought continues to be a major problem. The CalWater 2015 field campaign, which took place in California from January 15 - March 9, 2015, included comprehensive characterizations of aerosols and their ice nucleating ability via ground-, air-, and ship-based measurements. As part of this campaign, we characterized and analyzed the intra-air mass differences of INPs at a coastal site (Bodega Bay) using immersion freezing measurements of particles collected on filters. Aerosol filters collected throughout the campaign were characterized by their loading and dominant type using meteorology, aerosol size distributions, aerosol composition, and trace gas concentration data. Samples contained a variety of aerosol influences, including biomass burning, nitrogen pollution, sulfur pollution, and sea spray. This study had a particular focus on the INP activity spectra of sea spray aerosol (SSA). We used the online aerosol data to infer variations in SSA types and heat-treated specific samples to look for the presence of heat-labile biological INPs. Furthermore, we ran the NOAA HYSPLIT model to obtain back trajectories for samples dominated by SSA. We found that air masses dominated by distinct terrestrial source types are not well distinguished by their INP number concentrations. However, we did see significantly higher (up to 5000-fold) INP number concentrations in SSA samples taken at the coast compared with number concentrations in samples obtained over open ocean. This difference could be attributable to differences in overall aerosol abundance, which will be evaluated in future studies. Overall, our findings suggest that an ocean-specific INP parameterization is needed for oceanic emissions and that terrestrial INP sources strongly impact the ice nucleating ability of marine boundary air.

Study by AES, EELS Spectroscopy of electron Irradiation on InP and InPO4/InP in comparison with Monte Carlo simulation

NASA Astrophysics Data System (ADS)

Lounis, Z.; Bouslama, M.; Hamaida, K.; Jardin, C.; Abdellaoui, A.; Ouerdane, A.; Ghaffour, M.; Berrouachedi, N.

2012-02-01

We give the great interest to characterise the InP and InPO4/InP submitted to electron beam irradiation owing to the Auger Electron Spectroscopy (AES) associated to both methods Electron Energy Loss Spectroscopy (EELS). The incident electron produces breaking of (In-P) chemical bonds. The electron beam even acts to stimulate oxidation of InP surface involving on the top layers. Other, the oxide InPO4 developed on InP does appear very sensitive to the irradiation due to electron beam shown by the monitoring of EELS spectra recorded versus the irradiated times of the surface. There appears a new oxide thought to be In2O3. We give the simulation methods Casino (Carlo simulation of electron trajectory in solids) for determination with accuracy the loss energy of backscattered electrons and compared with reports results have been obtained with EELS Spectroscopy. These techniques of spectroscopy alone do not be able to verify the affected depth during interaction process. So, using this simulation method, we determine the interaction of electrons in the matter.

L-Myo-inositol 1-phosphate synthase in the aquatic fern Azolla filiculoides.

PubMed

Benaroya, Rony Oren; Zamski, Eli; Tel-Or, Elisha

2004-02-01

L-Myo-inositol 1-phosphate synthase (INPS EC 5.5.1.4) catalyzes the conversion of D-glucose 6-phosphate to L-myo-inositol 1-phosphate. INPS is a key enzyme involved in the biosynthesis of phytate which is a common form of stored phosphates in higher plants. The present study monitored the increase of INPS expression in Azolla filiculoides resulting from exposure to inorganic phosphates, metals and salt stress. The expression of INPS was significantly higher in Azolla plants that were grown in rich mineral growth medium than those maintained on nutritional growth medium. The expression of INPS protein and corresponding mRNA increased in plants cultured in minimal nutritional growth medium when phosphate or Zn2+, Cd2+ and NaCl were added to the growth medium. When employing rich mineral growth medium, INPS protein content increased with the addition of Zn2+, but decreased in the presence of Cd2+ and NaCl. These results indicated that accumulation of phytate in Azolla is a result of the intensified expression of INPS protein and mRNA, and its regulation may be primarily derived by the uptake of inorganic phosphate, and Zn2+, Cd2+ or NaCl.

Approaches to solar cell design for pulsed laser power receivers

NASA Technical Reports Server (NTRS)

Jain, Raj K.; Landis, Geoffrey A.

1993-01-01

Using a laser to beam power from Earth to a photovoltaic receiver in space could be a technology with applications to many space missions. Extremely high average-power lasers would be required in a wavelength range of 700-1000 nm. However, high-power lasers inherently operate in a pulsed format. Existing solar cells are not well designed to respond to pulsed incident power. To better understand cell response to pulsed illumination at high intensity, the PC-1D finite-element computer model was used to analyze the response of solar cells to continuous and pulsed laser illumination. Over 50 percent efficiency was calculated for both InP and GaAs cells under steady-state illumination near the optimum wavelength. The time-dependent response of a high-efficiency GaAs concentrator cell to a laser pulse was modeled, and the effect of laser intensity, wavelength, and bias point was studied. Three main effects decrease the efficiency of a solar cell under pulsed laser illumination: series resistance, L-C 'ringing' with the output circuit, and current limiting due to the output inductance. The problems can be solved either by changing the pulse shape or designing a solar cell to accept the pulsed input. Cell design possibilities discussed are a high-efficiency, light-trapping silicon cell, and a monolithic, low-inductance GaAs cell.

Modeling Suomi-NPP VIIRS Solar Diffuser Degradation due to Space Radiation

NASA Astrophysics Data System (ADS)

Shao, X.; Cao, C.

2014-12-01

The Visible Infrared Imaging Radiometer Suite (VIIRS) onboard Suomi-NPP uses a solar diffuser (SD) as on-board radiometric calibrator for the reflective solar band (RSB) calibration. Solar diffuser is made of Spectralon (one type of fluoropolymer) and was chosen because of its controlled reflectance in the VIS-NIR-SWIR region and its near-Lambertian reflectance profile. Spectralon is known to degrade in reflectance at the blue end of the spectrum due to exposure to space radiations such as solar UV radiation and energetic protons. These space radiations can modify the Spectralon surface through breaking C-C and C-F bonds and scissioning or cross linking the polymer, which causes the surface roughness and degrades its reflectance. VIIRS uses a SDSM (Solar Diffuser Stability Monitor) to monitor the change in the Solar Diffuser reflectance in the 0.4 - 0.94 um wavelength range and provide a correction to the calibration constants. The H factor derived from SDSM reveals that reflectance of 0.4 to 0.6um channels of VIIRS degrades faster than the reflectance of longer wavelength RSB channels. A model is developed to derive characteristic parameters such as mean SD surface roughness height and autocovariance length of SD surface roughness from the long term spectral degradation of SD reflectance as monitored by SDSM. These two parameters are trended to assess development of surface roughness of the SD over the operation period of VIIRS.

A ratioing radiometer for use with a solar diffuser. [to monitor in-flight calibration of satellite sensors

NASA Technical Reports Server (NTRS)

Palmer, James M.; Slater, Philip N.

1991-01-01

The use of an on-board solar diffuser has been proposed to monitor the in-flight calibration of satellite sensors. This paper presents the preliminary specifications and design for a ratioing radiometer, to be used to determine the change in radiance of the solar diffuser. The issues involved in spectral channel selection are discussed and the effects of stray light are presented. An error analysis showing the benefit of the ratioing radiometer is included.

Characterization and Performance of the Suomi-NPP VIIRS Solar Diffuser Stability Monitor

NASA Technical Reports Server (NTRS)

Fulbright, Jon P.; Ning, Lei; Kwofu, Chiang; Xiaoxiong, Xiong

2012-01-01

We describe the on-orbit characterization and performance of the Solar Diffuser Stability Monitor (SDSM) on-board Suomi-NPP/VIIRS. This description includes the observing procedure of each SDSM event, the algorithms used to generate the Solar Diffuser degradation corrective factors, and the results for the mission to date. We will also compare the performance of the VIIRS SDSM and SD to the similar components operating on the MODIS instrument on the EOS Terra and Aqua satellites

Sub-4 nm PtZn Intermetallic Nanoparticles for Enhanced Mass and Specific Activities in Catalytic Electrooxidation Reaction

DOE PAGES

Qi, Zhiyuan; Xiao, Chaoxian; Liu, Cong; ...

2017-03-08

Atomically ordered intermetallic nanoparticles (iNPs) have sparked considerable interest in fuel cell applications by virtue of their exceptional electronic and structural properties. However, the synthesis of small iNPs in a controllable manner remains a formidable challenge because of the high temperature generally required in the formation of intermetallic phases. Here in this paper we report a general method for the synthesis of PtZn iNPs (3.2 ± 0.4 nm) on multiwalled carbon nanotubes (MWNT) via a facile and capping agent free strategy using a sacrificial mesoporous silica (mSiO 2) shell. The as-prepared PtZn iNPs exhibited ca. 10 times higher mass activitymore » in both acidic and basic solution toward the methanol oxidation reaction (MOR) compared to larger PtZn iNPs synthesized on MWNT without the mSiO 2 shell. Density functional theory (DFT) calculations predict that PtZn systems go through a “non-CO” pathway for MOR because of the stabilization of the OH* intermediate by Zn atoms, while a pure Pt system forms highly stable COH* and CO* intermediates, leading to catalyst deactivation. Experimental studies on the origin of the backward oxidation peak of MOR coincide well with DFT predictions. Moreover, the calculations demonstrate that MOR on smaller PtZn iNPs is energetically more favorable than larger iNPs, due to their high density of corner sites and lower-lying energetic pathway. Therefore, smaller PtZn iNPs not only increase the number but also enhance the activity of the active sites in MOR compared with larger ones. This work opens a new avenue for the synthesis of small iNPs with more undercoordinated and enhanced active sites for fuel cell applications.« less

Two-Step Nucleation and Growth of InP Quantum Dots via Magic-Sized Cluster Intermediates

DOE PAGES

Gary, Dylan C.; Terban, Maxwell W.; Billinge, Simon J. L.; ...

2015-01-30

We report on the role of magic-sized clusters (MSCs) as key intermediates in the synthesis of indium phosphide quantum dots (InP QDs) from molecular precursors. These observations suggest that previous efforts to control nucleation and growth by tuning precursor reactivity have been undermined by formation of these kinetically persistent MSCs prior to QD formation. The thermal stability of InP MSCs is influenced by the presence of exogenous bases as well as choice of the anionic ligand set. Addition of a primary amine, a common additive in previous InP QD syntheses, to carboxylate terminated MSCs was found to bypass the formationmore » of MSCs, allowing for homogeneous growth of InP QDs through a continuum of isolable sizes. Substitution of the carboxylate ligand set for a phosphonate ligand set increased the thermal stability of one particular InP MSC to 400°C. The structure and optical properties of the MSCs with both carboxylate and phosphonate ligand sets were studied by UV-Vis absorption spectroscopy, powder XRD analysis, and solution ³¹P{¹H} and ¹H NMR spectroscopy. Finally, the carboxylate terminated MSCs were identified as effective single source precursors (SSPs) for the synthesis of high quality InP QDs. Employing InP MSCs as SSPs for QDs effectively decouples the formation of MSCs from the subsequent second nucleation event and growth of InP QDs. The concentration dependence of this SSP reaction, as well as the shape uniformity of particles observed by TEM suggests that the stepwise growth from MSCs directly to QDs proceeds via a second nucleation event rather than an aggregative growth mechanism.« less

Sub-4 nm PtZn Intermetallic Nanoparticles for Enhanced Mass and Specific Activities in Catalytic Electrooxidation Reaction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Qi, Zhiyuan; Xiao, Chaoxian; Liu, Cong

2017-03-22

Atomically ordered intermetallic nanoparticles (iNPs) have sparked considerable interest in fuel cell applications by virtue of their exceptional electronic and structural properties. However, the synthesis of small iNPs in a controllable manner remains a formidable challenge because of the high temperature generally required in the formation of intermetallic phases. Here we report a general method for the synthesis of PtZn. iNPs (3.2 +/- 0.4 nm) on multiwalled carbon nanotubes (MWNT) via a facile and capping agent free strategy using a sacrificial mesoporous silica (mSiO(2)) shell. The as-prepared PtZn iNPs exhibited ca. 10 times higher mass activity in both acidic andmore » basic solution toward the methanol oxidation reaction (MOR) compared to larger PtZn iNPs synthesized on MWNT without the mSiO2 shell. Density functional theory (DFT) calculations predict that PtZn systems go through a "non-CO" pathway for MOR because of the stabilization of the OH* intermediate by Zn atoms, while a pure Pt system forms highly stable COH* and CO* intermediates, leading to catalyst deactivation. Experimental studies on the origin of the backward oxidation peak of MOR coincide well with DFT predictions. Moreover, the calculations demonstrate that MOR on smaller PtZn iNPs is energetically more favorable than larger iNPs, due to their high density of corner sites and lower-lying energetic pathway. Therefore, smaller PtZn iNPs not only increase the number but also enhance the activity of the active sites in MOR compared with larger ones. This work opens a new avenue for the synthesis of small iNPs with more undercoordinated and enhanced active sites for fuel cell applications.« less

Predicting the abundance of ice nucleating particles of biological origin in precipitation

NASA Astrophysics Data System (ADS)

Stopelli, Emiliano; Conen, Franz; Morris, Cindy; Alewell, Christine

2016-04-01

Ice nucleation is a key step for the formation of precipitation on Earth. Ice nucleating particles (INPs) of biological origin catalyse the freezing of supercooled cloud droplets at temperatures warmer than -12 ° C. In order to understand the effective role of these INPs in conditioning precipitation, it is of primary importance to describe and predict their variability in the atmosphere. Over the course of two years, 14 sampling campaigns in precipitating clouds were conducted at the High Altitude Research Station Jungfraujoch, in the Swiss Alps, at 3580 m a.s.l. A total of 106 freshly fallen snow samples were analysed immediately on site for the concentration of INPs active at -8 ° C (INPs-8) by immersion freezing. Values of INPs-8 ranged from 0.21 to 434ṡml-1. Environmental parameters (like temperature of the air, wind speed, the stable oxygen ratio δ18O of snow, the number of particles larger than 0.5 μm) were used as independent variables to build a set of multiple linear regression models to describe and predict the observed variations of INPs-8 over time. The model providing the best results was based on fV (the fraction of remaining vapour in precipitating clouds, derived from δ18O) and on wind speed. It indicates that a coincidence of strong atmospheric turbulence and little prior precipitation from a cloud coincides with large concentrations of INPs-8. These conditions can be frequently encountered when air masses are suddenly forced to rise, for instance by the passage of a cold front, where also meteorological conditions are favourable to the onset of precipitation. To obtain more information on the presence of INPs-8 of biological origin and their relative composition, a set of precipitation samples were progressively filtered through different meshes (5 μm, 1.2 μm, 0.22 μm) followed by heating (40 ° C and 80 ° C). Almost all ice nucleating activity is lost after heating at 80 ° C, and a significant part of INPs-8 is sensitive to warming at 40 ° C. This indicates that the INPs-8 we measured are of biological origin and can be readily denatured. Still, each sample presents a specific distribution of the sizes of INPs-8, suggesting that INPs-8in environmental samples are a mix of molecules and cells either freely floating in the atmosphere or clumped or attached to mineral and soil particles. The abundance of bacterial cells and the presence of culturable Pseudomonas syringae were studied as well. Just a minor fraction of the INPs-8 is potentially due to bacterial cells or living P. syringae, indicating that the majority of INPs-8 measured in environmental samples may be therefore made of molecules released or detached from organisms.

THE SPATIO-TEMPORAL EVOLUTION OF SOLAR FLARES OBSERVED WITH AIA/SDO: FRACTAL DIFFUSION, SUB-DIFFUSION, OR LOGISTIC GROWTH?

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aschwanden, Markus J., E-mail: aschwanden@lmsal.com

2012-09-20

We explore the spatio-temporal evolution of solar flares by fitting a radial expansion model r(t) that consists of an exponentially growing acceleration phase, followed by a deceleration phase that is parameterized by the generalized diffusion function r(t){proportional_to}{kappa}(t - t{sub 1}){sup {beta}/2}, which includes the logistic growth limit ({beta} = 0), sub-diffusion ({beta} = 0-1), classical diffusion ({beta} = 1), super-diffusion ({beta} = 1-2), and the linear expansion limit ({beta} = 2). We analyze all M- and X-class flares observed with Geostationary Operational Environmental Satellite and Atmospheric Imaging Assembly/Solar Dynamics Observatory (SDO) during the first two years of the SDO mission,more » amounting to 155 events. We find that most flares operate in the sub-diffusive regime ({beta} = 0.53 {+-} 0.27), which we interpret in terms of anisotropic chain reactions of intermittent magnetic reconnection episodes in a low plasma-{beta} corona. We find a mean propagation speed of v = 15 {+-} 12 km s{sup -1}, with maximum speeds of v{sub max} = 80 {+-} 85 km s{sup -1} per flare, which is substantially slower than the sonic speeds expected for thermal diffusion of flare plasmas. The diffusive characteristics established here (for the first time for solar flares) is consistent with the fractal-diffusive self-organized criticality model, which predicted diffusive transport merely based on cellular automaton simulations.« less

Ultralow surface recombination velocity in InP nanowires probed by terahertz spectroscopy.

PubMed

Joyce, Hannah J; Wong-Leung, Jennifer; Yong, Chaw-Keong; Docherty, Callum J; Paiman, Suriati; Gao, Qiang; Tan, H Hoe; Jagadish, Chennupati; Lloyd-Hughes, James; Herz, Laura M; Johnston, Michael B

2012-10-10

Using transient terahertz photoconductivity measurements, we have made noncontact, room temperature measurements of the ultrafast charge carrier dynamics in InP nanowires. InP nanowires exhibited a very long photoconductivity lifetime of over 1 ns, and carrier lifetimes were remarkably insensitive to surface states despite the large nanowire surface area-to-volume ratio. An exceptionally low surface recombination velocity (170 cm/s) was recorded at room temperature. These results suggest that InP nanowires are prime candidates for optoelectronic devices, particularly photovoltaic devices, without the need for surface passivation. We found that the carrier mobility is not limited by nanowire diameter but is strongly limited by the presence of planar crystallographic defects such as stacking faults in these predominantly wurtzite nanowires. These findings show the great potential of very narrow InP nanowires for electronic devices but indicate that improvements in the crystallographic uniformity of InP nanowires will be critical for future nanowire device engineering.

Recent progress in high-output-voltage silicon solar cells

NASA Technical Reports Server (NTRS)

Muelenberg, A.; Arndt, R. A.; Allison, J. F.; Weizer, V.

1980-01-01

The status of the technology associated with the development of high output voltage silicon solar cells is reported. The energy conversion efficiency of a double diffusion process is compared to that of a single diffusion process. The efficiency of a 0.1 ohm/cm solar cell is characterized both before and after covering.

Helium diffusion in the sun

NASA Technical Reports Server (NTRS)

Bahcall, J. N.; Pinsonneault, M. H.

1992-01-01

We calculate improved standard solar models using the new Livermore (OPAL) opacity tables, an accurate (exportable) nuclear energy generation routine which takes account of recent measurements and analyses, and the recent Anders-Grevesse determination of heavy element abundances. We also evaluate directly the effect of the diffusion of helium with respect to hydrogen on the calculated neutrino fluxes, on the primordial solar helium abundance, and on the depth of the convective zone. Helium diffusion increases the predicted event rates by about 0.8 SNU, or 11 percent of the total rate, in the chlorine solar neutrino experiment, by about 3.5 SNU, or 3 percent, in the gallium solar neutrino experiments, and by about 12 percent in the Kamiokande and SNO solar neutrino experiments. The best standard solar model including helium diffusion and the most accurate nuclear parameters, element abundances, and radiative opacity predicts a value of 8.0 SNU +/- 3.0 SNU for the C1-37 experiment and 132 +21/-17 SNU for the Ga - 71 experiment, where the uncertainties include 3 sigma errors for all measured input parameters.

Calibration of passive remote observing optical and microwave instrumentation; Proceedings of the Meeting, Orlando, FL, Apr. 3-5, 1991

NASA Technical Reports Server (NTRS)

Guenther, Bruce W. (Editor)

1991-01-01

Various papers on the calibration of passive remote observing optical and microwave instrumentation are presented. Individual topics addressed include: on-board calibration device for a wide field-of-view instrument, calibration for the medium-resolution imaging spectrometer, cryogenic radiometers and intensity-stabilized lasers for EOS radiometric calibrations, radiometric stability of the Shuttle-borne solar backscatter ultraviolet spectrometer, ratioing radiometer for use with a solar diffuser, requirements of a solar diffuser and measurements of some candidate materials, reflectance stability analysis of Spectralon diffuse calibration panels, stray light effects on calibrations using a solar diffuser, radiometric calibration of SPOT 23 HRVs, surface and aerosol models for use in radiative transfer codes. Also addressed are: calibrated intercepts for solar radiometers used in remote sensor calibration, radiometric calibration of an airborne multispectral scanner, in-flight calibration of a helicopter-mounted Daedalus multispectral scanner, technique for improving the calibration of large-area sphere sources, remote colorimetry and its applications, spatial sampling errors for a satellite-borne scanning radiometer, calibration of EOS multispectral imaging sensors and solar irradiance variability.

Application of semiconductor diffusants to solar cells by screen printing

NASA Technical Reports Server (NTRS)

Evans, J. C., Jr.; Brandhorst, H. W., Jr.; Mazaris, G. A.; Scudder, L. R. (Inventor)

1978-01-01

Diffusants were applied onto semiconductor solar cell substrates, using screen printing techniques. The method was applicable to square and rectangular cells and can be used to apply dopants of opposite types to the front and back of the substrate. Then, simultaneous diffusion of both dopants can be performed with a single furnace pass.

Simultaneous junction formation

NASA Technical Reports Server (NTRS)

Campbell, R. B.

1984-01-01

High-risk, high-payoff improvements to a baseline process sequence of simultaneous junction formation of silicon solar cells are discussed. The feasibility of simultaneously forming front and back junctions of solar cells using liquid dopants on dendritic web silicon was studied. Simultaneous diffusion was compared to sequential diffusion. A belt furnace for the diffusion process was tested.

Semiconductor structural damage attendant to contact formation in III-V solar cells

NASA Technical Reports Server (NTRS)

Fatemi, Navid S.; Weizer, Victor G.

1991-01-01

In order to keep the resistive losses in solar cells to a minimum, it is often necessary for the ohmic contacts to be heat treated to lower the metal-semiconductor contact resistivity to acceptable values. Sintering of the contacts, however can result in extensive mechanical damage of the semiconductor surface under the metallization. An investigation of the detailed mechanisms involved in the process of contact formation during heat treatment may control the structural damage incurred by the semiconductor surface to acceptable levels, while achieving the desired values of contact resistivity for the ohmic contacts. The reaction kinetics of sintered gold contacts to InP were determined. It was found that the Au-InP interaction involves three consecutive stages marked by distinct color changes observed on the surface of the Au, and that each stage is governed by a different mechanism. A detailed description of these mechanisms and options to control them are presented.

Single-nanowire, low-bandgap hot carrier solar cells with tunable open-circuit voltage

NASA Astrophysics Data System (ADS)

Limpert, Steven; Burke, Adam; Chen, I.-Ju; Anttu, Nicklas; Lehmann, Sebastian; Fahlvik, Sofia; Bremner, Stephen; Conibeer, Gavin; Thelander, Claes; Pistol, Mats-Erik; Linke, Heiner

2017-10-01

Compared to traditional pn-junction photovoltaics, hot carrier solar cells offer potentially higher efficiency by extracting work from the kinetic energy of photogenerated ‘hot carriers’ before they cool to the lattice temperature. Hot carrier solar cells have been demonstrated in high-bandgap ferroelectric insulators and GaAs/AlGaAs heterostructures, but so far not in low-bandgap materials, where the potential efficiency gain is highest. Recently, a high open-circuit voltage was demonstrated in an illuminated wurtzite InAs nanowire with a low bandgap of 0.39 eV, and was interpreted in terms of a photothermoelectric effect. Here, we point out that this device is a hot carrier solar cell and discuss its performance in those terms. In the demonstrated devices, InP heterostructures are used as energy filters in order to thermoelectrically harvest the energy of hot electrons photogenerated in InAs absorber segments. The obtained photovoltage depends on the heterostructure design of the energy filter and is therefore tunable. By using a high-resistance, thermionic barrier, an open-circuit voltage is obtained that is in excess of the Shockley-Queisser limit. These results provide generalizable insight into how to realize high voltage hot carrier solar cells in low-bandgap materials, and therefore are a step towards the demonstration of higher efficiency hot carrier solar cells.

Analysis of tellurium as n-type dopant in GaInP: Doping, diffusion, memory effect and surfactant properties

NASA Astrophysics Data System (ADS)

García, I.; Rey-Stolle, I.; Galiana, B.; Algora, C.

2007-01-01

The use of tellurium as n-type dopant for GaAs and InP has several advantages, including a high incorporation efficiency, the very high doping levels achievable and a low diffusion coefficient. However, its use to dope Ga xIn 1-xP is not straightforward, since it shows several problems like a remarkable memory effect and an acute inertia of the material to become Te-doped, which gives rise to gradual doping profiles. In this paper, all these phenomena are studied and quantified using secondary ion mass spectroscopy (SIMS) and electrochemical CV profiling (ECV) measurements. Concerning the gradual doping profiles, their origin is linked to the interaction of Te and In in the gas phase and on the growth surface. A phenomenological explanation is given for this effect although the exact physical processes behind remain to be defined.

Triple and Quadruple Junctions Thermophotovoltaic Devices Lattice Matched to InP

NASA Technical Reports Server (NTRS)

Bhusal, L.; Freundlich, A.

2007-01-01

Thermophotovoltaic (TPV) conversion of IR radiation emanating from a radioisotope heat source is under consideration for deep space exploration. Ideally, for radiator temperatures of interest, the TPV cell must convert efficiently photons in the 0.4-0.7 eV spectral range. Best experimental data for single junction cells are obtained for lattice-mismatched 0.55 eV InGaAs based devices. It was suggested, that a tandem InGaAs based TPV cell made by monolithically combining two or more lattice mismatched InGaAs subcells on InP would result in a sizeable efficiency improvement. However, from a practical standpoint the implementation of more than two subcells with lattice mismatch systems will require extremely thick graded layers (defect filtering systems) to accommodate the lattice mismatch between the sub-cells and could detrimentally affect the recycling of the unused IR energy to the emitter. A buffer structure, consisting of various InPAs layers, is incorporated to accommodate the lattice mismatch between the high and low bandgap subcells. There are evidences that the presence of the buffer structure may generate defects, which could extend down to the underlying InGaAs layer. The unusual large band gap lowering observed in GaAs(1-x)N(x) with low nitrogen fraction [1] has sparked a new interest in the development of dilute nitrogen containing III-V semiconductors for long-wavelength optoelectronic devices (e.g. IR lasers, detector, solar cells) [2-7]. Lattice matched Ga1-yInyNxAs1-x on InP has recently been investigated for the potential use in the mid-infrared device applications [8], and it could be a strong candidate for the applications in TPV devices. This novel quaternary alloy allows the tuning of the band gap from 1.42 eV to below 1 eV on GaAs and band gap as low as 0.6eV when strained to InP, but it has its own limitations. To achieve such a low band gap using the quaternary Ga1-yInyNxAs1-x, either it needs to be strained on InP, which creates further complications due to the creation of defects and short life of the device or to introduce high content of indium, which again is found problematic due to the difficulties in diluting nitrogen in the presence of high indium [9]. An availability of material of proper band gap and lattice matching on InP are important issues for the development of TPV devices to perform better. To address those issues, recently we have shown that by adjusting the thickness of individual sublayers and the nitrogen composition, strain balanced GaAs(1-x)N(x)/InAs(1-y)N(y) superlattice can be designed to be both lattice matched to InP and have an effective bandgap in the desirable 0.4- 0.7eV range [10,11]. Theoretically the already reduced band gap of GaAs(1-x)N(x), due to the nitrogen effects, can be further reduced by subjecting it to a biaxial tensile strain, for example, by fabricating pseudomorphically strained layers on commonly available InP substrates. While such an approach in principle could allow access to smaller band gap (longer wavelength), only a few atomic monolayers of the material can be grown due to the large lattice mismatch between GaAs(1-x)N(x) and InP (approx.3.8-4.8 % for x<0.05, 300K). This limitation can be avoided using the principle of strain balancing [12], by introducing the alternating layers of InAs(1-y)N(y) with opposite strain (approx.2.4-3.1% for x<0.05, 300K) in combination with GaAs(1-x)N(x). Therefore, even an infinite pseudomorphically strained superlattice thickness can be realized from a sequence of GaAs(1-x)N(x) and InAs(1-y)N(y) layers if the thickness of each layer is kept below the threshold for its lattice relaxation

Computing diffuse fraction of global horizontal solar radiation: A model comparison.

PubMed

Dervishi, Sokol; Mahdavi, Ardeshir

2012-06-01

For simulation-based prediction of buildings' energy use or expected gains from building-integrated solar energy systems, information on both direct and diffuse component of solar radiation is necessary. Available measured data are, however, typically restricted to global horizontal irradiance. There have been thus many efforts in the past to develop algorithms for the derivation of the diffuse fraction of solar irradiance. In this context, the present paper compares eight models for estimating diffuse fraction of irradiance based on a database of measured irradiance from Vienna, Austria. These models generally involve mathematical formulations with multiple coefficients whose values are typically valid for a specific location. Subsequent to a first comparison of these eight models, three better performing models were selected for a more detailed analysis. Thereby, the coefficients of the models were modified to account for Vienna data. The results suggest that some models can provide relatively reliable estimations of the diffuse fractions of the global irradiance. The calibration procedure could only slightly improve the models' performance.

InP nanopore arrays for photoelectrochemical hydrogen generation.

PubMed

Li, Qiang; Zheng, Maojun; Zhang, Bin; Zhu, Changqing; Wang, Faze; Song, Jingnan; Zhong, Miao; Ma, Li; Shen, Wenzhong

2016-02-19

We report a facile and large-scale fabrication of highly ordered one-dimensional (1D) indium phosphide (InP) nanopore arrays (NPs) and their application as photoelectrodes for photoelectrochemical (PEC) hydrogen production. These InP NPs exhibit superior PEC performance due to their excellent light-trapping characteristics, high-quality 1D conducting channels and large surface areas. The photocurrent density of optimized InP NPs is 8.9 times higher than that of planar counterpart at an applied potential of +0.3 V versus RHE under AM 1.5G illumination (100 mW cm(-2)). In addition, the onset potential of InP NPs exhibits 105 mV of cathodic shift relative to planar control. The superior performance of the nanoporous samples is further explained by Mott-Schottky and electrochemical impedance spectroscopy ananlysis.

Improving drug accumulation and photothermal efficacy in tumor depending on size of ICG loaded lipid-polymer nanoparticles.

PubMed

Zhao, Pengfei; Zheng, Mingbin; Yue, Caixia; Luo, Zhenyu; Gong, Ping; Gao, Guanhui; Sheng, Zonghai; Zheng, Cuifang; Cai, Lintao

2014-07-01

A key challenge to strengthen anti-tumor efficacy is to improve drug accumulation in tumors through size control. To explore the biodistribution and tumor accumulation of nanoparticles, we developed indocyanine green (ICG) loaded poly (lactic-co-glycolic acid) (PLGA) -lecithin-polyethylene glycol (PEG) core-shell nanoparticles (INPs) with 39 nm, 68 nm and 116 nm via single-step nanoprecipitation. These INPs exhibited good monodispersity, excellent fluorescence and size stability, and enhanced temperature response after laser irradiation. Through cell uptake and photothermal efficiency in vitro, we demonstrated that 39 nm INPs were more easily be absorbed by pancreatic carcinoma tumor cells (BxPC-3) and showed better photothermal damage than that of 68 nm and 116 nm size of INPs. Simultaneously, the fluorescence of INPs offered a real-time imaging monitor for subcellular locating and in vivo metabolic distribution. Near-infrared imaging in vivo and photothermal therapy illustrated that 68 nm INPs showed the strongest efficiency to suppress tumor growth due to abundant accumulation in BxPC-3 xenograft tumor model. The findings revealed that a nontoxic, size-dependent, theranostic INPs model was built for in vivo cancer imaging and photothermal therapy without adverse effect. Copyright © 2014 Elsevier Ltd. All rights reserved.

Different growth regimes in InP nanowire growth mediated by Ag nanoparticles.

PubMed

Oliveira, D S; Zavarize, M; Tizei, L H G; Walls, M; Ospina, C A; Iikawa, F; Ugarte, D; Cotta, M A

2017-12-15

We report on the existence of two different regimes in one-step Ag-seeded InP nanowire growth. The vapor-liquid-solid-mechanism is present at larger In precursor flows and temperatures, ∼500 °C, yielding high aspect ratio and pure wurtzite InP nanowires with a semi-spherical metal particle at the thin apex. Periodic diameter oscillations can be achieved under extreme In supersaturations at this temperature range, showing the presence of a liquid catalyst. However, under lower temperatures and In precursor flows, large diameter InP nanowires with mixed wurtzite/zincblende segments are obtained, similarly to In-assisted growth. Chemical composition analysis suggest that In-rich droplet formation is catalyzed at the substrate surface via Ag nanoparticles; this process might be facilitated by the sulfur contamination detected in these nanoparticles. Furthermore, part of the original Ag nanoparticle remains solid and is embedded inside the actual catalyst, providing an in situ method to switch growth mechanisms upon changing In precursor flow. Nevertheless, our Ag-seeded InP nanowires exhibit overall optical emission spectra consistent with the observed structural properties and similar to Au-catalyzed InP nanowires. We thus show that Ag nanoparticles may be a suitable replacement for Au in InP nanowire growth.

Primary Results from the Measurement of Nature Ice Nuclear Particles during 2017 Spring in Beijing, China

NASA Astrophysics Data System (ADS)

Che, Y.; Dang, J.; Fang, W.; Qian, Y.

2017-12-01

The ice nuclear particles (INPs) play a critical role in weather modification in mixed-phase clouds (MPCs) because ice can influence the supercooled liquid water content through the Wegener-Bergeron-Findeisen process. The fundamental desire to understand ice nucleation is the same as when such research began in earnest more than 60 years ago while the first cloud seeding activity began and enhanced from the last decade by climate change researches. The primary INPs sources, both from natural and anthropogenic, may be change a lot for decades. The purpose of this paper is to get the new background information of INPs and comparing with historical data. The INPs concentrations were observed twice a day(9:00 am and 14:00 pm) in Beijing from Mar. 20 to Apr. 19, 2017 using the 5 Litters Bigg's mixing cloud chamber. The method, time and sites of the observation are basically the same with the experiment at year 1963, 1995 and 1996. Compared with the previous observations, the observed activation temperature -10° is added, besides the -15°, -20°, -25°, -30°. The results show that the INPs concentrations at the different activation temperatures have good consistency trend as diurnal variation. This is consistent with the observations in 1963, 1995 and 1996. The INPs concentrations in this observation are higher than the result in 1963, but obviously lower than 1995 and 1996. It shows that natural changes and human activities in the past 20 years did not significantly increase the INPs concentration. During the observation period, there were weak precipitations in four days (Mar. 20, Mar. 22, Mar. 23, Mar.24), the INPs concentrations tended to decrease in the intermittent precipitation from Mar. 20 to Mar. 25. This shows that the precipitations have effect on the removal of ice nuclei. The visibility sensor was also synchronized observed in the work. There was clearly an inverse correlation between INPs concentration and visibility with the diurnal variation. The correlation coefficient between INPs concentration at -25° and visibility is -0.51. Fog-haze weather has occurred many times during the observation period. And in the no precipitation weather, the visibility is directly affected by the severity of fog-haze. The result shows that the more severe fog-haze, the higher INPs concentration.

Automation and heat transfer characterization of immersion mode spectroscopy for analysis of ice nucleating particles

NASA Astrophysics Data System (ADS)

Beall, Charlotte M.; Stokes, M. Dale; Hill, Thomas C.; DeMott, Paul J.; DeWald, Jesse T.; Prather, Kimberly A.

2017-07-01

Ice nucleating particles (INPs) influence cloud properties and can affect the overall precipitation efficiency. Developing a parameterization of INPs in global climate models has proven challenging. More INP measurements - including studies of their spatial distribution, sources and sinks, and fundamental freezing mechanisms - must be conducted in order to further improve INP parameterizations. In this paper, an immersion mode INP measurement technique is modified and automated using a software-controlled, real-time image stream designed to leverage optical changes of water droplets to detect freezing events. For the first time, heat transfer properties of the INP measurement technique are characterized using a finite-element-analysis-based heat transfer simulation to improve accuracy of INP freezing temperature measurement. The heat transfer simulation is proposed as a tool that could be used to explain the sources of bias in temperature measurements in INP measurement techniques and ultimately explain the observed discrepancies in measured INP freezing temperatures between different instruments. The simulation results show that a difference of +8.4 °C between the well base temperature and the headspace gas results in an up to 0.6 °C stratification of the aliquot, whereas a difference of +4.2 °C or less results in a thermally homogenous water volume within the error of the thermal probe, ±0.2 °C. The results also show that there is a strong temperature gradient in the immediate vicinity of the aliquot, such that without careful placement of temperature probes, or characterization of heat transfer properties of the water and cooling environment, INP measurements can be biased toward colder temperatures. Based on a modified immersion mode technique, the Automated Ice Spectrometer (AIS), measurements of the standard test dust illite NX are reported and compared against six other immersion mode droplet assay techniques featured in Hiranuma et al. (2015) that used wet suspensions. AIS measurements of illite NX INP freezing temperatures compare reasonably with others, falling within the 5 °C spread in reported spectra. The AIS as well as its characterization of heat transfer properties allows higher confidence in accuracy of freezing temperature measurement, allows higher throughput of sample analysis, and enables disentanglement of the effects of heat transfer rates on sample volumes from time dependence of ice nucleation.

Theoretical Determination of Optimal Material Parameters for ZnCdTe/ZnCdSe Quantum Dot Intermediate Band Solar Cells

NASA Astrophysics Data System (ADS)

Imperato, C. M.; Ranepura, G. A.; Deych, L. I.; Kuskovsky, I. L.

2018-03-01

Intermediate band solar cells (IBSCs) are designed to enhance the photovoltaic efficiency significantly over that of a single-junction solar cell as determined by the Shockley-Queisser limit. In this work we present calculations to determine parameters of type-II Zn1-xCdxTe/Zn1-yCdySe quantum dots (QDs) grown on the InP substrate suitable for IBSCs. The calculations are done via the self-consistent variational method, accounting for the disk form of the QDs, presence of the strained ZnSe interfacial layer, and under conditions of a strain-free device structure. We show that to achieve the required parameters relatively thick QDs are required. Barriers must contain Cd concentration in the range of 35-44%, while Cd concentration in QD can vary widely from 0% to 70%, depending on their thickness to achieve the intermediate band energies in the range of 0.50-0.73 eV. It is also shown that the results are weakly dependent on the barrier thickness.

Forward-biased current annealing of radiation degraded indium phosphide and gallium arsenide solar cells

NASA Technical Reports Server (NTRS)

Michael, Sherif; Cypranowski, Corinne; Anspaugh, Bruce

1990-01-01

The preliminary results of a novel approach to low-temperature annealing of previously irradiated indium phosphide and gallium arsenide solar cells are reported. The technique is based on forward-biased current annealing. The two types of III-V solar cells were irradiated with 1-MeV electrons to a fluence level of (1-10) x 10 to the 14th electrons/sq cm. Several annealing attempts were made, varying all conditions. Optimum annealing was achieved when cells were injected with minority currents at a constant 90 C. The current density for each type of cell was also determined. Significant recovery of degraded parameters was achieved in both cases. However, the InP cell recovery notably exceeded the recovery in GaAs cells. The recovery is thought to be caused by current-stimulated reordering of the radiator-induced displacement damage. Both types of cell were then subjected to several cycles of irradiation and annealing. The results were also very promising. The significant recovery of degraded cell parameters at low temperature might play a major role in considerably extending the end of life of future spacecraft.

Atmosphere-biosphere exchange of CO2 and O3 in the Central Amazon Forest

NASA Technical Reports Server (NTRS)

Fan, Song-Miao; Wofsy, Steven C.; Bakwin, Peter S.; Jacob, Daniel J.; Fitzjarrald, David R.

1990-01-01

An eddy correlation measurement of O3 deposition and CO2 exchange at a level 10 m above the canopy of the Amazon forest, conducted as part of the NASA/INPE ABLE2b mission during the wet season of 1987, is presented. It was found that the ecosystem exchange of CO2 undergoes a well-defined diurnal variation driven by the input of solar radiation. A curvilinear relationship was found between solar irradiance and uptake of CO2, with net CO2 uptake at a given solar irradiance equal to rates observed over forests in other climate zones. The carbon balance of the system appeared sensitive to cloud cover on the time scale of the experiment, suggesting that global carbon storage might be affected by changes in insolation associated with tropical climate fluctuations. The forest was found to be an efficient sink for O3 during the day, and evidence indicates that the Amazon forests could be a significant sink for global ozone during the nine-month wet period and that deforestation could dramatically alter O3 budgets.

Optimization and development of solar power system under diffused sunlight condition in rural areas with supercapacitor integration

NASA Astrophysics Data System (ADS)

Castelino, Roystan V.; Jana, Suman; Kumhar, Rajesh; Singh, Niraj K.

2018-04-01

The simulation and hardware based experiment in this presented paper shows a possibility of increasing the reliability of solar power under diffused condition by using super capacitor module. This experimental setup can be used in those areas where the sun light is intermittent and under the diffused radiation condition. Due to diffused radiation, solar PV cells operate very poorly, but by using this setup the power efficiency can be increased greatly. Sometimes dependent numerical models are used to measure the voltage and current response of the hardware setup in MATLAB Simulink based environment. To convert the scattered solar radiation to electricity using the conventional solar PV module, batteries have to be linked with the rapid charging or discharging device like super capacitor module. The conventional method consists of a charging circuit, which dumps the power if the voltage is below certain voltage level, but this circuit utilizes the entire power even if the voltage is low under diffused sun light conditions. There is no power dumped in this circuit. The efficiency and viability of this labscale experimental setup can be examined with further experiment and industrial model.

Utilising shade to optimize UV exposure for vitamin D

NASA Astrophysics Data System (ADS)

Turnbull, D. J.; Parisi, A. V.

2008-01-01

Numerous studies have stated that humans need to utilise full sun radiation, at certain times of the day, to assist the body in synthesising the required levels of vitamin D3. The time needed to be spent in the full sun depends on a number of factors, for example, age, skin type, latitude, solar zenith angle. Current Australian guidelines suggest exposure to approximately 1/6 to 1/3 of a minimum erythemal dose (MED), depending on age, would be appropriate to provide adequate vitamin D3 levels. The aim of the study was to determine the exposure times to diffuse solar UV to receive exposures of 1/6 and 1/3 MED for a changing solar zenith angle in order to assess the possible role that diffuse UV (scattered radiation) may play in vitamin D3 effective UV exposures (UVD3). Diffuse and global erythemal UV measurements were conducted at five minute intervals over a twelve month period for a solar zenith angle range of 4° to 80° at a latitude of 27.6° S. For diffuse UV exposures of 1/6 and 1/3 MED, solar zenith angles smaller than 60° and 50° respectively can be utilised for exposure times of less than 10 min. Spectral measurements showed that, for a solar zenith angle of 40°, the UVA (315-400 nm) in the diffuse component of the solar UV is reduced by approximately 62% compared to the UVA in the global UV, whereas UVD3 wavelengths are only reduced by approximately 43%. At certain latitudes, diffuse UV under shade may play an important role in providing the human body with adequate levels of UVD3 (290-330 nm) radiation without experiencing the high levels of damaging UVA observed in full sun.

Utilising shade to optimize UV exposure for vitamin D

NASA Astrophysics Data System (ADS)

Turnbull, D. J.; Parisi, A. V.

2008-06-01

Numerous studies have stated that humans need to utilise full sun radiation, at certain times of the day, to assist the body in synthesising the required levels of vitamin D3. The time needed to be spent in the full sun depends on a number of factors, for example, age, skin type, latitude, solar zenith angle. Current Australian guidelines suggest exposure to approximately 1/6 to 1/3 of a minimum erythemal dose (MED), depending on age, would be appropriate to provide adequate vitamin D3 levels. The aim of the study was to determine the exposure times to diffuse solar UV to receive exposures of 1/6 and 1/3 MED for a changing solar zenith angle in order to assess the possible role that diffuse UV (scattered radiation) may play in vitamin D3 effective UV exposures (UVD3). Diffuse and global erythemal UV measurements were conducted at five minute intervals over a twelve month period for a solar zenith angle range of 4° to 80° at a latitude of 27.6° S. For a diffuse UV exposure of 1/3 MED, solar zenith angles smaller than approximately 50° can be utilised for exposure times of less than 10 min. Spectral measurements showed that, for a solar zenith angle of 40°, the UVA (315-400 nm) in the diffuse component of the solar UV is reduced by approximately 62% compared to the UVA in the global UV, whereas UVD3 wavelengths are only reduced by approximately 43%. At certain latitudes, diffuse UV under shade may play an important role in providing the human body with adequate levels of UVD3 (290-315 nm) radiation without experiencing the high levels of UVA observed in full sun.

Ga originated kink-and-tail Zn diffusion profiles in InGaAsP and InGaAlAs alloys during MOVPE regrowth

NASA Astrophysics Data System (ADS)

Kitatani, T.; Okamoto, K.; Uchida, K.; Tanaka, S.

2017-12-01

We investigated the diffusion characteristics of Zn in ternary and quaternary alloys of InGaAsP and InGaAlAs, which are important materials in long-wavelength optical communication devices. The measured Zn diffusion profiles of InGaAs, InGaAsP, and InGaAlAs showed kink-and-tail shapes in which Zn concentration fell abruptly at first and then decreased slowly, whereas those of InP and InAlAs showed only abrupt decreases. Thus, only Ga-containing alloys had tail-like profiles. Since this tail was well described by the group-V vacancy related defect model, we deduced that its mechanism is closely related with group-V vacancies in Ga-related bonds such as GaP or GaAs. Furthermore, we demonstrated the possibility that many more group-V vacancies originated from GaP bonds than from GaAs bonds, indicating the difficulty in crystal growth of high quality alloys that have GaP components.

Incorporating photon recycling into the analytical drift-diffusion model of high efficiency solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lumb, Matthew P.; Naval Research Laboratory, Washington, DC 20375; Steiner, Myles A.

The analytical drift-diffusion formalism is able to accurately simulate a wide range of solar cell architectures and was recently extended to include those with back surface reflectors. However, as solar cells approach the limits of material quality, photon recycling effects become increasingly important in predicting the behavior of these cells. In particular, the minority carrier diffusion length is significantly affected by the photon recycling, with consequences for the solar cell performance. In this paper, we outline an approach to account for photon recycling in the analytical Hovel model and compare analytical model predictions to GaAs-based experimental devices operating close tomore » the fundamental efficiency limit.« less

Brain tumor specifies intermediate progenitor cell identity by attenuating β-catenin/Armadillo activity

PubMed Central

Komori, Hideyuki; Xiao, Qi; McCartney, Brooke M.; Lee, Cheng-Yu

2014-01-01

During asymmetric stem cell division, both the daughter stem cell and the presumptive intermediate progenitor cell inherit cytoplasm from their parental stem cell. Thus, proper specification of intermediate progenitor cell identity requires an efficient mechanism to rapidly extinguish the activity of self-renewal factors, but the mechanisms remain unknown in most stem cell lineages. During asymmetric division of a type II neural stem cell (neuroblast) in the Drosophila larval brain, the Brain tumor (Brat) protein segregates unequally into the immature intermediate neural progenitor (INP), where it specifies INP identity by attenuating the function of the self-renewal factor Klumpfuss (Klu), but the mechanisms are not understood. Here, we report that Brat specifies INP identity through its N-terminal B-boxes via a novel mechanism that is independent of asymmetric protein segregation. Brat-mediated specification of INP identity is critically dependent on the function of the Wnt destruction complex, which attenuates the activity of β-catenin/Armadillo (Arm) in immature INPs. Aberrantly increasing Arm activity in immature INPs further exacerbates the defects in the specification of INP identity and enhances the supernumerary neuroblast mutant phenotype in brat mutant brains. By contrast, reducing Arm activity in immature INPs suppresses supernumerary neuroblast formation in brat mutant brains. Finally, reducing Arm activity also strongly suppresses supernumerary neuroblasts induced by overexpression of klu. Thus, the Brat-dependent mechanism extinguishes the function of the self-renewal factor Klu in the presumptive intermediate progenitor cell by attenuating Arm activity, balancing stem cell maintenance and progenitor cell specification. PMID:24257623

InP HEMT Integrated Circuits for Submillimeter Wave Radiometers in Earth Remote Sensing

NASA Technical Reports Server (NTRS)

Deal, William R.; Chattopadhyay, Goutam

2012-01-01

The operating frequency of InP integrated circuits has pushed well into the Submillimeter Wave frequency band, with amplification reported as high as 670 GHz. This paper provides an overview of current performance and potential application of InP HEMT to Submillimeter Wave radiometers for earth remote sensing.

Hydrazine-Assisted Formation of Indium Phosphide (InP)-Based Nanowires and Core-Shell Composites

PubMed Central

Patzke, Greta R.; Kontic, Roman; Shiolashvili, Zeinab; Makhatadze, Nino; Jishiashvili, David

2012-01-01

Indium phosphide nanowires (InP NWs) are accessible at 440 °C from a novel vapor phase deposition approach from crystalline InP sources in hydrazine atmospheres containing 3 mol % H2O. Uniform zinc blende (ZB) InP NWs with diameters around 20 nm and lengths up to several tens of micrometers are preferably deposited on Si substrates. InP particle sizes further increase with the deposition temperature. The straightforward protocol was extended on the one-step formation of new core-shell InP–Ga NWs from mixed InP/Ga source materials. Composite nanocables with diameters below 20 nm and shells of amorphous gallium oxide are obtained at low deposition temperatures around 350 °C. Furthermore, InP/Zn sources afford InP NWs with amorphous Zn/P/O-coatings at slightly higher temperatures (400 °C) from analogous setups. At 450 °C, the smooth outer layer of InP-Zn NWs is transformed into bead-shaped coatings. The novel combinations of the key semiconductor InP with isotropic insulator shell materials open up interesting application perspectives in nanoelectronics. PMID:28809296

Epitaxial growth of high quality InP on Si substrates: The role of InAs/InP quantum dots as effective dislocation filters

NASA Astrophysics Data System (ADS)

Shi, Bei; Li, Qiang; Lau, Kei May

2018-05-01

Monolithic integration of InP on a Si platform ideally facilitates on-chip light sources in silicon photonic applications. In addition to the well-developed hybrid bonding techniques, the direct epitaxy method is spawning as a more strategic and potentially cost-effective approach to monolithically integrate InP-based telecom lasers. To minimize the unwanted defects within the InP crystal, we explore multiple InAs/InP quantum dots as dislocation filters. The high quality InP buffer is thus obtained, and the dislocation filtering effects of the quantum dots are directly examined via both plan-view and cross-sectional transmission electron microscopy, along with room-temperature photoluminescence. The defect density on the InP surface was reduced to 3 × 108/cm2, providing an improved optical property of active photonic devices on Si substrates. This work offers a novel solution to advance large-scale integration of InP on Si, which is beneficial to silicon-based long-wavelength lasers in telecommunications.

Carrier thermalization dynamics in single zincblende and wurtzite InP Nanowires.

PubMed

Wang, Yuda; Jackson, Howard E; Smith, Leigh M; Burgess, Tim; Paiman, Suriati; Gao, Qiang; Tan, Hark Hoe; Jagadish, Chennupati

2014-12-10

Using transient Rayleigh scattering (TRS) measurements, we obtain photoexcited carrier thermalization dynamics for both zincblende (ZB) and wurtzite (WZ) InP single nanowires (NW) with picosecond resolution. A phenomenological fitting model based on direct band-to-band transition theory is developed to extract the electron-hole-plasma density and temperature as a function of time from TRS measurements of single nanowires, which have complex valence band structures. We find that the thermalization dynamics of hot carriers depends strongly on material (GaAs NW vs InP NW) and less strongly on crystal structure (ZB vs WZ). The thermalization dynamics of ZB and WZ InP NWs are similar. But a comparison of the thermalization dynamics in ZB and WZ InP NWs with ZB GaAs NWs reveals more than an order of magnitude slower relaxation for the InP NWs. We interpret these results as reflecting their distinctive phonon band structures that lead to different hot phonon effects. Knowledge of hot carrier thermalization dynamics is an essential component for effective incorporation of nanowire materials into electronic devices.

Hydrazine-Assisted Formation of Indium Phosphide (InP)-Based Nanowires and Core-Shell Composites.

PubMed

Patzke, Greta R; Kontic, Roman; Shiolashvili, Zeinab; Makhatadze, Nino; Jishiashvili, David

2012-12-27

Indium phosphide nanowires (InP NWs) are accessible at 440 °C from a novel vapor phase deposition approach from crystalline InP sources in hydrazine atmospheres containing 3 mol % H₂O. Uniform zinc blende (ZB) InP NWs with diameters around 20 nm and lengths up to several tens of micrometers are preferably deposited on Si substrates. InP particle sizes further increase with the deposition temperature. The straightforward protocol was extended on the one-step formation of new core-shell InP-Ga NWs from mixed InP/Ga source materials. Composite nanocables with diameters below 20 nm and shells of amorphous gallium oxide are obtained at low deposition temperatures around 350 °C. Furthermore, InP/Zn sources afford InP NWs with amorphous Zn/P/O-coatings at slightly higher temperatures (400 °C) from analogous setups. At 450 °C, the smooth outer layer of InP-Zn NWs is transformed into bead-shaped coatings. The novel combinations of the key semiconductor InP with isotropic insulator shell materials open up interesting application perspectives in nanoelectronics.

Single n+-i-n+ InP nanowires for highly sensitive terahertz detection.

PubMed

Peng, Kun; Parkinson, Patrick; Gao, Qian; Boland, Jessica L; Li, Ziyuan; Wang, Fan; Mokkapati, Sudha; Fu, Lan; Johnston, Michael B; Tan, Hark Hoe; Jagadish, Chennupati

2017-03-24

Developing single-nanowire terahertz (THz) electronics and employing them as sub-wavelength components for highly-integrated THz time-domain spectroscopy (THz-TDS) applications is a promising approach to achieve future low-cost, highly integrable and high-resolution THz tools, which are desirable in many areas spanning from security, industry, environmental monitoring and medical diagnostics to fundamental science. In this work, we present the design and growth of n + -i-n + InP nanowires. The axial doping profile of the n + -i-n + InP nanowires has been calibrated and characterized using combined optical and electrical approaches to achieve nanowire devices with low contact resistances, on which the highly-sensitive InP single-nanowire photoconductive THz detectors have been demonstrated. While the n + -i-n + InP nanowire detector has a only pA-level response current, it has a 2.5 times improved signal-to-noise ratio compared with the undoped InP nanowire detector and is comparable to traditional bulk THz detectors. This performance indicates a promising path to nanowire-based THz electronics for future commercial applications.

Ice nucleation by soil dust compared to desert dust aerosols

NASA Astrophysics Data System (ADS)

Moehler, O.; Steinke, I.; Ullrich, R.; Höhler, K.; Schiebel, T.; Hoose, C.; Funk, R.

2015-12-01

A minor fraction of atmospheric aerosol particles, so-called ice-nucleating particles (INPs), initiates the formation of the ice phase in tropospheric clouds and thereby markedly influences the Earth's weather and climate systems. Whether an aerosol particle acts as an INP depends on its size, morphology and chemical compositions. The INP fraction of certain aerosol types also strongly depends on the temperature and the relative humidity. Because both desert dust and soil dust aerosols typically comprise a variety of different particles, it is difficult to assess and predict their contribution to the atmospheric INP abundance. This requires both accurate modelling of the sources and atmospheric distribution of atmospheric dust components and detailed investigations of their ice nucleation activities. The latter can be achieved in laboratory experiments and parameterized for use in weather and climate models as a function of temperature and particle surface area, a parameter called ice-nucleation active site (INAS) density. Concerning ice nucleation activity studies, the soil dust is of particular interest because it contains a significant fraction of organics and biological components, both with the potential for contributing to the atmospheric INP abundance at relatively high temperatures compared to mineral components. First laboratory ice nucleation experiments with a few soil dust samples indicated their INP fraction to be comparable or slightly enhanced to that of desert dust. We have used the AIDA (Aerosol Interaction and Dynamics in the Atmosphere) cloud simulation chamber to study the immersion freezing ability of four different arable soil dusts, sampled in Germany, China and Argentina. For temperatures higher than about -20°C, we found the INP fraction of aerosols generated from these samples by a dry dispersion technique to be significantly higher compared to various desert dust aerosols also investigated in AIDA experiments. In this contribution, we will summarize the experimental results, introduce related INP parameterizations for use in weather and climate models, and briefly discuss possible reasons for the discrepancy between the INP fraction of desert and soil dust aerosols.

Sinterless Fabrication Of Contact Pads On InP Devices

NASA Technical Reports Server (NTRS)

Weizer, Victor G.; Fatemi, Navid S.; Korenyi-Both, Andras L.

1995-01-01

Research has shown that with proper choice of material, low-resistance contact pads deposited on solar cells and other devices by improved technique that does not involve sintering. Research directed at understanding mechanisms involved in contact-sintering process has resulted in identification of special group of materials that includes phosphides of gold, silver, and nickel; specifically, Au(2)P(3), AgP(2), and Ni(3)P. Incorporation of phosphide interlayer substantially reduces resistivity between gold current-carrying layer and indium phosphide substrate. Further research indicated only very thin interlayer of any of these compounds needed to obtain low contact resistance, without subjecting contact to destructive sintering process.

InP (Indium Phosphide): Into the future

NASA Technical Reports Server (NTRS)

Brandhorst, Henry W., Jr.

1989-01-01

Major industry is beginning to be devoted to indium phosphide and its potential applications. Key to these applications are high speed and radiation tolerance; however the high cost of indium phosphide may be an inhibitor to progress. The broad applicability of indium phosphide to many devices will be discussed with an emphasis on photovoltaics. Major attention is devoted to radiation tolerance and means of reducing cost of devices. Some of the approaches applicable to solar cells may also be relevant to other devices. The intent is to display the impact of visionary leadership in the field and enable the directions and broad applicability of indium phosphide.

Solar energy distribution over Egypt using cloudiness from Meteosat photos

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mosalam Shaltout, M.A.; Hassen, A.H.

1990-01-01

In Egypt, there are 10 ground stations for measuring the global solar radiation, and five stations for measuring the diffuse solar radiation. Every day at noon, the Meteorological Authority in Cairo receives three photographs of cloudiness over Egypt from the Meteosat satellite, one in the visible, and two in the infra-red bands (10.5-12.5 {mu}m) and (5.7-7.1 {mu}m). The monthly average cloudiness for 24 sites over Egypt are measured and calculated from Meteosat observations during the period 1985-1986. Correlation analysis between the cloudiness observed by Meteosat and global solar radiation measured from the ground stations is carried out. It is foundmore » that, the correlation coefficients are about 0.90 for the simple linear regression, and increase for the second and third degree regressions. Also, the correlation coefficients for the cloudiness with the diffuse solar radiation are about 0.80 for the simple linear regression, and increase for the second and third degree regression. Models and empirical relations for estimating the global and diffuse solar radiation from Meteosat cloudiness data over Egypt are deduced and tested. Seasonal maps for the global and diffuse radiation over Egypt are carried out.« less

Research on gallium arsenide diffused junction solar cells

NASA Technical Reports Server (NTRS)

Borrego, J. M.; Ghandi, S. K.

1984-01-01

The feasibility of using bulk GaAs for the fabrication of diffused junction solar cells was determined. The effects of thermal processing of GaAs was studied, and the quality of starting bulk GaAs for this purpose was assessed. These cells are to be made by open tube diffusion techniques, and are to be tested for photovoltaic response under AMO conditions.

[Managment system in safety and health at work organization. An Italian example in public sector: Inps].

PubMed

Di Loreto, G; Felicioli, G

2010-01-01

The Istituto Nazionale della Previdenza Sociale (Inps) is one of the biggest Public Sector organizations in Italy; about 30.000 people work in his structures. Fifteen years ago, Inps launched a long term project with the objective to create a complex and efficient safety and health at work organization. Italian law contemplates a specific kind of physician working on safety and health at work, called "Medico competente", and 85 Inps's physicians work also as "Medico competente". This work describes how IT improved coordination and efficiency in this occupational health's management system.

PLEURAL EFFECTS OF INDIUM PHOSPHIDE IN B6C3F1 MICE: NONFIBROUS PARTICULATE INDUCED PLEURAL FIBROSIS

PubMed Central

Kirby, Patrick J.; Shines, Cassandra J.; Taylor, Genie J.; Bousquet, Ronald W.; Price, Herman C.; Everitt, Jeffrey I.; Morgan, Daniel L.

2010-01-01

The mechanism(s) by which chronic inhalation of indium phosphide (InP) particles causes pleural fibrosis is not known. Few studies of InP pleural toxicity have been conducted because of the challenges in conducting particulate inhalation exposures, and because the pleural lesions developed slowly over the 2-year inhalation study. The authors investigated whether InP (1 mg/kg) administered by a single oropharyngeal aspiration would cause pleural fibrosis in male B6C3F1 mice. By 28 days after treatment, protein and lactate dehydrogenase (LDH) were significantly increased in bronchoalveolar lavage fluid (BALF), but were unchanged in pleural lavage fluid (PLF). A pronounced pleural effusion characterized by significant increases in cytokines and a 3.7-fold increase in cell number was detected 28 days after InP treatment. Aspiration of soluble InCl3 caused a similar delayed pleural effusion; however, other soluble metals, insoluble particles, and fibers did not. The effusion caused by InP was accompanied by areas of pleural thickening and inflammation at day 28, and by pleural fibrosis at day 98. Aspiration of InP produced pleural fibrosis that was histologically similar to lesions caused by chronic inhalation exposure, and in a shorter time period. This oropharyngeal aspiration model was used to provide an initial characterization of the progression of pleural lesions caused by InP. PMID:19995279

Growth of InAs/InP core-shell nanowires with various pure crystal structures.

PubMed

Gorji Ghalamestani, Sepideh; Heurlin, Magnus; Wernersson, Lars-Erik; Lehmann, Sebastian; Dick, Kimberly A

2012-07-20

We have studied the epitaxial growth of an InP shell on various pure InAs core nanowire crystal structures by metal-organic vapor phase epitaxy. The InP shell is grown on wurtzite (WZ), zinc-blende (ZB), and {111}- and {110}-type faceted ZB twin-plane superlattice (TSL) structures by tuning the InP shell growth parameters and controlling the shell thickness. The growth results, particularly on the WZ nanowires, show that homogeneous InP shell growth is promoted at relatively high temperatures (∼500 °C), but that the InAs nanowires decompose under the applied conditions. In order to protect the InAs core nanowires from decomposition, a short protective InP segment is first grown axially at lower temperatures (420-460 °C), before commencing the radial growth at a higher temperature. Further studies revealed that the InP radial growth rate is significantly higher on the ZB and TSL nanowires compared to WZ counterparts, and shows a strong anisotropy in polar directions. As a result, thin shells were obtained during low temperature InP growth on ZB structures, while a higher temperature was used to obtain uniform thick shells. In addition, a schematic growth model is suggested to explain the basic processes occurring during the shell growth on the TSL crystal structures.

Single-particle characterization of ice-nucleating particles and ice particles residuals sampled by three different techniques

NASA Astrophysics Data System (ADS)

Kandler, Konrad; Worringen, Annette; Benker, Nathalie; Dirsch, Thomas; Mertes, Stephan; Schenk, Ludwig; Kästner, Udo; Frank, Fabian; Nillius, Björn; Bundke, Ulrich; Rose, Diana; Curtius, Joachim; Kupiszewski, Piotr; Weingartner, Ernest; Vochezer, Paul; Schneider, Johannes; Schmidt, Susan; Weinbruch, Stephan; Ebert, Martin

2015-04-01

During January/February 2013, at the High Alpine Research Station Jungfraujoch a measurement campaign was carried out, which was centered on atmospheric ice-nucleating particles (INP) and ice particle residuals (IPR). Three different techniques for separation of INP and IPR from the non-ice-active particles are compared. The Ice Selective Inlet (ISI) and the Ice Counterflow Virtual Impactor (Ice-CVI) sample ice particles from mixed phase clouds and allow for the analysis of the residuals. The combination of the Fast Ice Nucleus Chamber (FINCH) and the Ice Nuclei Pumped Counterflow Virtual Impactor (IN-PCVI) provides ice-activating conditions to aerosol particles and extracts the activated INP for analysis. Collected particles were analyzed by scanning electron microscopy and energy-dispersive X-ray microanalysis to determine size, chemical composition and mixing state. All INP/IPR-separating techniques had considerable abundances (median 20 - 70 %) of instrumental contamination artifacts (ISI: Si-O spheres, probably calibration aerosol; Ice-CVI: Al-O particles; FINCH+IN-PCVI: steel particles). Also, potential sampling artifacts (e.g., pure soluble material) occurred with a median abundance of < 20 %. While these could be explained as IPR by ice break-up, for INP their IN-ability pathway is less clear. After removal of the contamination artifacts, silicates and Ca-rich particles, carbonaceous material and metal oxides were the major INP/IPR particle types separated by all three techniques. Soot was a minor contributor. Lead was detected in less than 10 % of the particles, of which the majority were internal mixtures with other particle types. Sea-salt and sulfates were identified by all three methods as INP/IPR. Most samples showed a maximum of the INP/IPR size distribution at 400 nm geometric diameter. In a few cases, a second super-micron maximum was identified. Soot/carbonaceous material and metal oxides were present mainly in the submicron range. ISI and FINCH yielded silicates and Ca-rich particles mainly with diameters above 1 µm, while the Ice-CVI also separated many submicron IPR. As strictly parallel sampling could not be performed, a part of the discrepancies between the different techniques may result from variations in meteorological conditions and subsequent INP/IPR composition. The observed differences in the particle group abundances as well as in the mixing state of INP/IPR express the need for further studies to better understand the influence of the separating techniques on the INP/IPR chemical composition.

Radiation tolerance of low resistivity, high voltage silicon solar cells

NASA Technical Reports Server (NTRS)

Weizer, V. G.; Weinberg, I.; Swartz, C. K.

1984-01-01

The radiation tolerance of the following three low resistivity, high voltage silicon solar cells was investigated: (1) the COMSAT MSD (multi-step diffused) cell, (2) the MinMIS cell, and (3) the MIND cell. A description of these solar cells is given along with drawings of their configurations. The diffusion length damage coefficients for the cells were calculated and presented. Solar cell spectral response was also discussed. Cells of the MinMIS type were judged to be unsuitable for use in the space radiation environment.

Characterization of MODIS and SeaWiFS Solar Diffuser On-Orbit Degradation

NASA Technical Reports Server (NTRS)

Xiong, X.; Eplee, R. E., Jr.; Sun, J.; Patt, F. S.; Angal, A.; McClain, C. R.

2009-01-01

MODIS has 20 reflective solar bands (RSB), covering the VIS, NIR, and SWIR spectral regions. They are calibrated on-orbit using a solar diffuser (SD) panel, made of space-grade Spectralon. The SD bi-directional reflectance factor (BRF) was characterized pre-launch by the instrument vendor reference to the NIST reflectance standard. Its on-orbit degradation is tracked by an on-board solar diffuser stability monitor (SDSM). The SeaWifS on-orbit calibration strategy uses monthly lunar observations to monitor the long-term radiometric stability of the instrument and applies daily observations of its solar diffuser (an aluminum plate coated with YB71 paint) to track the short-term changes in the instrument response. This paper provides an overview of MODIS and SeaWiFS SD observations, applications, and approaches used to track their on-orbit degradations. Results from sensors are presented with emphasis on the spectral dependence and temporal trends of the SD degradation. Lessons and challenges from the use of SD for sensor on-orbit calibration are also discussed.

Earmuff restricts progenitor cell potential by attenuating the competence to respond to self-renewal factors.

PubMed

Janssens, Derek H; Komori, Hideyuki; Grbac, Daniel; Chen, Keng; Koe, Chwee Tat; Wang, Hongyan; Lee, Cheng-Yu

2014-03-01

Despite expressing stem cell self-renewal factors, intermediate progenitor cells possess restricted developmental potential, which allows them to give rise exclusively to differentiated progeny rather than stem cell progeny. Failure to restrict the developmental potential can allow intermediate progenitor cells to revert into aberrant stem cells that might contribute to tumorigenesis. Insight into stable restriction of the developmental potential in intermediate progenitor cells could improve our understanding of the development and growth of tumors, but the mechanisms involved remain largely unknown. Intermediate neural progenitors (INPs), generated by type II neural stem cells (neuroblasts) in fly larval brains, provide an in vivo model for investigating the mechanisms that stably restrict the developmental potential of intermediate progenitor cells. Here, we report that the transcriptional repressor protein Earmuff (Erm) functions temporally after Brain tumor (Brat) and Numb to restrict the developmental potential of uncommitted (immature) INPs. Consistently, endogenous Erm is detected in immature INPs but undetectable in INPs. Erm-dependent restriction of the developmental potential in immature INPs leads to attenuated competence to respond to all known neuroblast self-renewal factors in INPs. We also identified that the BAP chromatin-remodeling complex probably functions cooperatively with Erm to restrict the developmental potential of immature INPs. Together, these data led us to conclude that the Erm-BAP-dependent mechanism stably restricts the developmental potential of immature INPs by attenuating their genomic responses to stem cell self-renewal factors. We propose that restriction of developmental potential by the Erm-BAP-dependent mechanism functionally distinguishes intermediate progenitor cells from stem cells, ensuring the generation of differentiated cells and preventing the formation of progenitor cell-derived tumor-initiating stem cells.

Application of intermittent negative pressure on the lower extremity and its effect on macro- and microcirculation in the foot of healthy volunteers.

PubMed

Sundby, Øyvind H; Høiseth, Lars Øivind; Mathiesen, Iacob; Jørgensen, Jørgen J; Weedon-Fekjær, Harald; Hisdal, Jonny

2016-09-01

Intermittent negative pressure (INP) applied to the lower leg and foot may increase peripheral circulation. However, it is not clear how different patterns of INP affect macro- and microcirculation in the foot. The aim of this study was therefore to determine the effect of different patterns of negative pressure on foot perfusion in healthy volunteers. We hypothesized that short periods with INP would elicit an increase in foot perfusion compared to no negative pressure. In 23 healthy volunteers, we continuously recorded blood flow velocity in a distal foot artery, skin blood flow, heart rate, and blood pressure during application of different patterns of negative pressure (-40 mmHg) to the lower leg. Each participant had their right leg inside an airtight chamber connected to an INP generator. After a baseline period at atmospheric pressure, we applied four different 120 sec sequences with either constant negative pressure or different INP patterns, in a randomized order. The results showed corresponding fluctuations in blood flow velocity and skin blood flow throughout the INP sequences. Blood flow velocity reached a maximum at 4 sec after the onset of negative pressure (average 44% increase above baseline, P < 0.001). Skin blood flow and skin temperature increased during all INP sequences (P < 0.001). During constant negative pressure, average blood flow velocity, skin blood flow, and skin temperature decreased (P < 0.001). In conclusion, we observed increased foot perfusion in healthy volunteers after the application of INP on the lower limb. © 2016 The Authors. Physiological Reports published by Wiley Periodicals, Inc. on behalf of the American Physiological Society and The Physiological Society.

Pushing indium phosphide quantum dot emission deeper into the near infrared

NASA Astrophysics Data System (ADS)

Saeboe, A. M.; Kays, J.; Mahler, A. H.; Dennis, A. M.

2018-02-01

Cadmium-free near infrared (NIR) emitting quantum dots (QDs) have significant potential for multiplexed tissue-depth imaging applications in the first optical tissue window (i.e., 650 - 900 nm). Indium phosphide (InP) chemistry provides one of the more promising cadmium-free options for biomedical imaging, but the full tunability of this material has not yet been achieved. Specifically, InP QD emission has been tuned from 480 - 730 nm in previous literature reports, but examples of samples emitting from 730 nm to the InP bulk bandgap limit of 925 nm are lacking. We hypothesize that by generating inverted structures comprising ZnSe/InP/ZnS in a core/shell/shell heterostructure, optical emission from the InP shell can be tuned by changing the InP shell thickness, including pushing deeper into the NIR than current InP QDs. Colloidal synthesis methods including hot injection precipitation of the ZnSe core and a modified successive ion layer adsorption and reaction (SILAR) method for stepwise shell deposition were used to promote growth of core/shell/shell materials with varying thicknesses of the InP shell. By controlling the number of injections of indium and phosphorous precursor material, the emission peak was tuned from 515 nm to 845 nm (2.41 - 1.47 eV) with consistent full width half maximum (FWHM) values of the emission peak 0.32 eV. To confer water solubility, the nanoparticles were encapsulated in PEGylated phospholipid micelles, and multiplexing of NIR-emitting InP QDs was demonstrated using an IVIS imaging system. These materials show potential for multiplexed imaging of targeted QD contrast agents in the first optical tissue window.

Addressing the ice nucleating abilities of marine aerosol: A combination of deposition mode laboratory and field measurements

NASA Astrophysics Data System (ADS)

Ladino, L. A.; Yakobi-Hancock, J. D.; Kilthau, W. P.; Mason, R. H.; Si, M.; Li, J.; Miller, L. A.; Schiller, C. L.; Huffman, J. A.; Aller, J. Y.; Knopf, D. A.; Bertram, A. K.; Abbatt, J. P. D.

2016-05-01

This study addresses, through two types of experiments, the potential for the oceans to act as a source of atmospheric ice-nucleating particles (INPs). The INP concentration via deposition mode nucleation was measured in situ at a coastal site in British Columbia in August 2013. The INP concentration at conditions relevant to cirrus clouds (i.e., -40 °C and relative humidity with respect to ice, RHice = 139%) ranged from 0.2 L-1 to 3.3 L-1. Correlations of the INP concentrations with levels of anthropogenic tracers (i.e., CO, SO2, NOx, and black carbon) and numbers of fluorescent particles do not indicate a significant influence from anthropogenic sources or submicron bioaerosols, respectively. Additionally, the INPs measured in the deposition mode showed a poor correlation with the concentration of particles with sizes larger than 500 nm, which is in contrast with observations made in the immersion freezing mode. To investigate the nature of particles that could have acted as deposition INP, laboratory experiments with potential marine aerosol particles were conducted under the ice-nucleating conditions used in the field. At -40 °C, no deposition activity was observed with salt aerosol particles (sodium chloride and two forms of commercial sea salt: Sigma-Aldrich and Instant Ocean), particles composed of a commercial source of natural organic matter (Suwannee River humic material), or particle mixtures of sea salt and humic material. In contrast, exudates from three phytoplankton (Thalassiosira pseudonana, Nanochloris atomus, and Emiliania huxleyi) and one marine bacterium (Vibrio harveyi) exhibited INP activity at low RHice values, down to below 110%. This suggests that the INPs measured at the field site were of marine biological origins, although we cannot rule out other sources, including mineral dust.

The effect of diffusion induced lattice stress on the open-circuit voltage in silicon solar cells

NASA Technical Reports Server (NTRS)

Weizer, V. G.; Godlewski, M. P.

1984-01-01

It is demonstrated that diffusion induced stresses in low resistivity silicon solar cells can significantly reduce both the open-circuit voltage and collection efficiency. The degradation mechanism involves stress induced changes in both the minority carrier mobility and the diffusion length. Thermal recovery characteristics indicate that the stresses are relieved at higher temperatures by divacancy flow (silicon self diffusion). The level of residual stress in as-fabricated cells was found to be negligible in the cells tested.

Optical and structural properties of 100 MeV Fe{sup 9+} ion irradiated InP

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dubey, R. L., E-mail: radhekrishna.dubey@xaviers.edu; Department of Physics, University of Mumbai, Mumbai-400 032; Dubey, S. K.

2016-05-06

Single crystal InP samples were irradiated with 100 MeV Fe{sup 9+} ions for ion fluences 1x10{sup 12} and 1x10{sup 13} cm{sup −2}. Optical properties of irradiated InP was investigated by Spectroscopic Ellipsometry and UV-VIS-NIR spectroscopy. The optical parameters like, refractive index, extinction coefficient, absorption coefficient is found to be fluence dependent near the surface as well as near the projected range. Small change in the optical parameters near the surface region as investigated by Spectroscopic Ellipsometry indicatesthat the surfaces of irradiated InP are similar to non-irradiated InP. This is also supported by RBS/C measurements. The UV-VIS-NIR study revealed the decrease inmore » the band gap and increase in the defect concentration in the irradiated sample as a result of nuclear energy loss.« less

Neutronic, steady-state, and transient analyses for the Kazakhstan VVR-K reactor with LEU fuel: ANL independent verification results

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hanan, Nelson A.; Garner, Patrick L.

Calculations have been performed for steady state and postulated transients in the VVR-K reactor at the Institute of Nuclear Physics (INP), Kazakhstan. (The reactor designation in Cyrillic is BBP-K; transliterating characters to English gives VVR-K but translating words gives WWR-K.) These calculations have been performed at the request of staff of the INP who are performing similar calculations. The selection of the transients considered started during working meetings and email correspondence between Argonne National Laboratory (ANL) and INP staff. In the end the transient were defined by the INP staff. Calculations were performed for the fresh low-enriched uranium (LEU) coremore » and for four subsequent cores as beryllium is added to maintain critically during the first 15 cycles. These calculations have been performed independently from those being performed by INP and serve as one step in the verification process.« less

Separation of Electric Fields Into Potential and Inductive Parts, and Implications for Radial Diffusion

NASA Astrophysics Data System (ADS)

Chan, A. A.; Ilie, R.; Elkington, S. R.; Albert, J.; Huie, W.

2017-12-01

It has been traditional to separate radiation belt radial-diffusion coefficients into two contributions: an "electrostatic" diffusion coefficient, which is assumed to be due to a potential (non-inductive) electric field, and an "electromagnetic" diffusion coefficient , which is assumed to be due to the combined effect of an inductive electric field and the corresponding time-dependent magnetic field. One difficulty in implementing this separation when using magnetospheric fields obtained from measurements, or from MHD simulations, is that only the total electric field is given; the separation of the electric field into potential and inductive parts is not readily available. In this work we separate the electric field using a numerical method based on the Helmholtz decomposition of the total motional electric field calculated by the BATS-R-US MHD code. The inner boundary for the electric potential is based on the Ridley Ionospheric Model solution and we assume floating boundary conditions in the solar wind. Using different idealized solar wind drivers, including a solar wind density that is oscillating at a single frequency or with a broad spectrum of frequencies, we calculate potential and inductive electric fields, electric and magnetic power spectral densities, and corresponding radial diffusion coefficients. Simulations driven by idealized solar wind conditions show a clear separation of the potential and inductive contributions to the power spectral densities and diffusion coefficients. Simulations with more realistic solar wind drivers are underway to better assess the use of electrostatic and electromagnetic diffusion coefficients in understanding ULF wave-particle interactions in Earth's radiation belts.

Using Microporous Polytetrafluoroethylene Thin Sheets as a Flexible Solar Diffuser to Minimize Sunlight Glint to Cameras in Space

NASA Technical Reports Server (NTRS)

Choi, Michael K.

2016-01-01

An innovative design of using microporous PTFE thin sheets as a solar diffuser for MLI blankets or mechanical structure has been developed. It minimizes sunlight or stray-light glint to cameras when it is incident on these components in space. A microporous black PTFE thin sheet solar diffuser has been qualified for flight at NASA GSFC and installed to the TAGSAM arm MLI, OCAMS PolyCam sunshade MLI and SamCam motor riser MLI in the NASA OSIRIS-REx mission to meet the SamCam camera BRDF requirement.

Using microporous polytetrafluoroethylene thin sheets as a flexible solar diffuser to minimize sunlight glint to cameras in space

NASA Astrophysics Data System (ADS)

Choi, Michael K.

2016-09-01

An innovative design of using microporous PTFE thin sheets as a solar diffuser for MLI blankets or mechanical structure has been developed. It minimizes sunlight or stray-light glint to cameras when it is incident on these components in space. A microporous black PTFE thin sheet solar diffuser has been qualified for flight at NASA GSFC and installed to the TAGSAM arm MLI, OCAMS PolyCam sunshade MLI and SamCam motor riser MLI in the NASA OSIRIS-REx mission to meet the SamCam camera BRDF requirement.

Proposed suitable electron reflector layer materials for thin-film CuIn1-xGaxSe2 solar cells

NASA Astrophysics Data System (ADS)

Sharbati, Samaneh; Gharibshahian, Iman; Orouji, Ali A.

2018-01-01

This paper investigates the electrical properties of electron reflector layer to survey materials as an electron reflector (ER) for chalcopyrite CuInGaSe solar cells. The purpose is optimizing the conduction-band and valence-band offsets at ER layer/CIGS junction that can effectively reduce the electron recombination near the back contact. In this work, an initial device model based on an experimental solar cell is established, then the properties of a solar cell with electron reflector layer are physically analyzed. The electron reflector layer numerically applied to baseline model of thin-film CIGS cell fabricated by ZSW (efficiency = 20.3%). The improvement of efficiency is achievable by electron reflector layer materials with Eg > 1.3 eV and -0.3 < Δχ < 0.7, depends on bandgap. Our simulations examine various electron reflector layer materials and conclude the most suitable electron reflector layer for this real CIGS solar cells. ZnSnP2, CdSiAs2, GaAs, CdTe, Cu2ZnSnS4, InP, CuO, Pb10Ag3Sb11S28, CuIn5S8, SnS, PbCuSbS3, Cu3AsS4 as well as CuIn1-xGaxSe (x > 0.5) are efficient electron reflector layer materials, so the potential improvement in efficiency obtained relative gain of 5%.

Consequences of using nonlinear particle trajectories to compute spatial diffusion coefficients. [for cosmic ray propagation in interstellar and interplanetary space

NASA Technical Reports Server (NTRS)

Goldstein, M. L.

1977-01-01

In a study of cosmic ray propagation in interstellar and interplanetary space, a perturbed orbit resonant scattering theory for pitch angle diffusion in a slab model of magnetostatic turbulence is slightly generalized and used to compute the diffusion coefficient for spatial propagation parallel to the mean magnetic field. This diffusion coefficient has been useful for describing the solar modulation of the galactic cosmic rays, and for explaining the diffusive phase in solar flares in which the initial anisotropy of the particle distribution decays to isotropy.

Magnetic Turbulence, Fast Magnetic Field line Diffusion and Small Magnetic Structures in the Solar Wind

NASA Astrophysics Data System (ADS)

Zimbardo, G.; Pommois, P.; Veltri, P.

2003-09-01

The influence of magnetic turbulence on magnetic field line diffusion has been known since the early days of space and plasma physics. However, the importance of ``stochastic diffusion'' for energetic particles has been challenged on the basis of the fact that sharp gradients of either energetic particles or ion composition are often observed in the solar wind. Here we show that fast transverse field line and particle diffusion can coexist with small magnetic structures, sharp gradients, and with long lived magnetic flux tubes. We show, by means of a numerical realization of three dimensional magnetic turbulence and by use of the concepts of deterministic chaos and turbulent transport, that turbulent diffusion is different from Gaussian diffusion, and that transport can be inhomogeneous even if turbulence homogeneously fills the heliosphere. Several diagnostics of field line transport and flux tube evolution are shown, and the size of small magnetic structures in the solar wind, like gradient scales and flux tube thickness, are estimated and compared to the observations.

Brazil's remote sensing activities in the Eighties

NASA Technical Reports Server (NTRS)

Raupp, M. A.; Pereiradacunha, R.; Novaes, R. A.

1985-01-01

Most of the remote sensing activities in Brazil have been conducted by the Institute for Space Research (INPE). This report describes briefly INPE's activities in remote sensing in the last years. INPE has been engaged in research (e.g., radiance studies), development (e.g., CCD-scanners, image processing devices) and applications (e.g., crop survey, land use, mineral resources, etc.) of remote sensing. INPE is also responsible for the operation (data reception and processing) of the LANDSATs and meteorological satellites. Data acquisition activities include the development of CCD-Camera to be deployed on board the space shuttle and the construction of a remote sensing satellite.

High ESD Breakdown-Voltage InP HBT Transimpedance Amplifier IC for Optical Video Distribution Systems

NASA Astrophysics Data System (ADS)

Sano, Kimikazu; Nagatani, Munehiko; Mutoh, Miwa; Murata, Koichi

This paper is a report on a high ESD breakdown-voltage InP HBT transimpedance amplifier IC for optical video distribution systems. To make ESD breakdown-voltage higher, we designed ESD protection circuits integrated in the TIA IC using base-collector/base-emitter diodes of InP HBTs and resistors. These components for ESD protection circuits have already existed in the employed InP HBT IC process, so no process modifications were needed. Furthermore, to meet requirements for use in optical video distribution systems, we studied circuit design techniques to obtain a good input-output linearity and a low-noise characteristic. Fabricated InP HBT TIA IC exhibited high human-body-model ESD breakdown voltages (±1000V for power supply terminals, ±200V for high-speed input/output terminals), good input-output linearity (less than 2.9-% duty-cycle-distortion), and low noise characteristic (10.7pA/√Hz averaged input-referred noise current density) with a -3-dB-down higher frequency of 6.9GHz. To the best of our knowledge, this paper is the first literature describing InP ICs with high ESD-breakdown voltages.

3D hybrid integrated lasers for silicon photonics

NASA Astrophysics Data System (ADS)

Song, B.; Pinna, S.; Liu, Y.; Megalini, L.; Klamkin, J.

2018-02-01

A novel 3D hybrid integration platform combines group III-V materials and silicon photonics to yield high-performance lasers is presented. This platform is based on flip-chip bonding and vertical optical coupling integration. In this work, indium phosphide (InP) devices with monolithic vertical total internal reflection turning mirrors were bonded to active silicon photonic circuits containing vertical grating couplers. Greater than 2 mW of optical power was coupled into a silicon waveguide from an InP laser. The InP devices can also be bonded directly to the silicon substrate, providing an efficient path for heat dissipation owing to the higher thermal conductance of silicon compared to InP. Lasers realized with this technique demonstrated a thermal impedance as low as 6.2°C/W, allowing for high efficiency and operation at high temperature. InP reflective semiconductor optical amplifiers were also integrated with 3D hybrid integration to form integrated external cavity lasers. These lasers demonstrated a wavelength tuning range of 30 nm, relative intensity noise lower than -135 dB/Hz and laser linewidth of 1.5 MHz. This platform is promising for integration of InP lasers and photonic integrated circuits on silicon photonics.

Tailoring the optical characteristics of microsized InP nanoneedles directly grown on silicon.

PubMed

Li, Kun; Sun, Hao; Ren, Fan; Ng, Kar Wei; Tran, Thai-Truong D; Chen, Roger; Chang-Hasnain, Connie J

2014-01-08

Nanoscale self-assembly offers a pathway to realize heterogeneous integration of III-V materials on silicon. However, for III-V nanowires directly grown on silicon, dislocation-free single-crystal quality could only be attained below certain critical dimensions. We recently reported a new approach that overcomes this size constraint, demonstrating the growth of single-crystal InGaAs/GaAs and InP nanoneedles with the base diameters exceeding 1 μm. Here, we report distinct optical characteristics of InP nanoneedles which are varied from mostly zincblende, zincblende/wurtzite-mixed, to pure wurtzite crystalline phase. We achieved, for the first time, pure single-crystal wurtzite-phase InP nanoneedles grown on silicon with bandgaps of 80 meV larger than that of zincblende-phase InP. Being able to attain excellent material quality while scaling up in size promises outstanding device performance of these nanoneedles. At room temperature, a high internal quantum efficiency of 25% and optically pumped lasing are demonstrated for single nanoneedle as-grown on silicon substrate. Recombination dynamics proves the excellent surface quality of the InP nanoneedles, which paves the way toward achieving multijunction photovoltaic cells, long-wavelength heterostructure lasers, and advanced photonic integrated circuits.

Quantifying losses and thermodynamic limits in nanophotonic solar cells

NASA Astrophysics Data System (ADS)

Mann, Sander A.; Oener, Sebastian Z.; Cavalli, Alessandro; Haverkort, Jos E. M.; Bakkers, Erik P. A. M.; Garnett, Erik C.

2016-12-01

Nanophotonic engineering shows great potential for photovoltaics: the record conversion efficiencies of nanowire solar cells are increasing rapidly and the record open-circuit voltages are becoming comparable to the records for planar equivalents. Furthermore, it has been suggested that certain nanophotonic effects can reduce costs and increase efficiencies with respect to planar solar cells. These effects are particularly pronounced in single-nanowire devices, where two out of the three dimensions are subwavelength. Single-nanowire devices thus provide an ideal platform to study how nanophotonics affects photovoltaics. However, for these devices the standard definition of power conversion efficiency no longer applies, because the nanowire can absorb light from an area much larger than its own size. Additionally, the thermodynamic limit on the photovoltage is unknown a priori and may be very different from that of a planar solar cell. This complicates the characterization and optimization of these devices. Here, we analyse an InP single-nanowire solar cell using intrinsic metrics to place its performance on an absolute thermodynamic scale and pinpoint performance loss mechanisms. To determine these metrics we have developed an integrating sphere microscopy set-up that enables simultaneous and spatially resolved quantitative absorption, internal quantum efficiency (IQE) and photoluminescence quantum yield (PLQY) measurements. For our record single-nanowire solar cell, we measure a photocurrent collection efficiency of >90% and an open-circuit voltage of 850 mV, which is 73% of the thermodynamic limit (1.16 V).

Design review of the Brazilian Experimental Solar Telescope

NASA Astrophysics Data System (ADS)

Dal Lago, A.; Vieira, L. E. A.; Albuquerque, B.; Castilho, B.; Guarnieri, F. L.; Cardoso, F. R.; Guerrero, G.; Rodríguez, J. M.; Santos, J.; Costa, J. E. R.; Palacios, J.; da Silva, L.; Alves, L. R.; Costa, L. L.; Sampaio, M.; Dias Silveira, M. V.; Domingues, M. O.; Rockenbach, M.; Aquino, M. C. O.; Soares, M. C. R.; Barbosa, M. J.; Mendes, O., Jr.; Jauer, P. R.; Branco, R.; Dallaqua, R.; Stekel, T. R. C.; Pinto, T. S. N.; Menconi, V. E.; Souza, V. M. C. E. S.; Gonzalez, W.; Rigozo, N.

2015-12-01

The Brazilian's National Institute for Space Research (INPE), in collaboration with the Engineering School of Lorena/University of São Paulo (EEL/USP), the Federal University of Minas Gerais (UFMG), and the Brazilian's National Laboratory for Astrophysics (LNA), is developing a solar vector magnetograph and visible-light imager to study solar processes through observations of the solar surface magnetic field. The Brazilian Experimental Solar Telescope is designed to obtain full disk magnetic field and line-of-sight velocity observations in the photosphere. Here we discuss the system requirements and the first design review of the instrument. The instrument is composed by a Ritchey-Chrétien telescope with a 500 mm aperture and 4000 mm focal length. LCD polarization modulators will be employed for the polarization analysis and a tuning Fabry-Perot filter for the wavelength scanning near the Fe II 630.25 nm line. Two large field-of-view, high-resolution 5.5 megapixel sCMOS cameras will be employed as sensors. Additionally, we describe the project management and system engineering approaches employed in this project. As the magnetic field anchored at the solar surface produces most of the structures and energetic events in the upper solar atmosphere and significantly influences the heliosphere, the development of this instrument plays an important role in advancing scientific knowledge in this field. In particular, the Brazilian's Space Weather program will benefit most from the development of this technology. We expect that this project will be the starting point to establish a strong research program on Solar Physics in Brazil. Our main aim is to progressively acquire the know-how to build state-of-art solar vector magnetograph and visible-light imagers for space-based platforms.

Diffusion lengths of silicon solar cells from luminescence images

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wuerfel, P.; Trupke, T.; Puzzer, T.

A method for spatially resolved measurement of the minority carrier diffusion length in silicon wafers and in silicon solar cells is introduced. The method, which is based on measuring the ratio of two luminescence images taken with two different spectral filters, is applicable, in principle, to both photoluminescence and electroluminescence measurements and is demonstrated experimentally by electroluminescence measurements on a multicrystalline silicon solar cell. Good agreement is observed with the diffusion length distribution obtained from a spectrally resolved light beam induced current map. In contrast to the determination of diffusion lengths from one single luminescence image, the method proposed heremore » gives absolute values of the diffusion length and, in comparison, it is much less sensitive to lateral voltage variations across the cell area as caused by local variations of the series resistance. It is also shown that measuring the ratio of two luminescence images allows distinguishing shunts or surface defects from bulk defects.« less

Mass properties survey of solar array technologies

NASA Technical Reports Server (NTRS)

Kraus, Robert

1991-01-01

An overview of the technologies, electrical performance, and mass characteristics of many of the presently available and the more advanced developmental space solar array technologies is presented. Qualitative trends and quantitative mass estimates as total array output power is increased from 1 kW to 5 kW at End of Life (EOL) from a single wing are shown. The array technologies are part of a database supporting an ongoing solar power subsystem model development for top level subsystem and technology analyses. The model is used to estimate the overall electrical and thermal performance of the complete subsystem, and then calculate the mass and volume of the array, batteries, power management, and thermal control elements as an initial sizing. The array types considered here include planar rigid panel designs, flexible and rigid fold-out planar arrays, and two concentrator designs, one with one critical axis and the other with two critical axes. Solar cell technologies of Si, GaAs, and InP were included in the analyses. Comparisons were made at the array level; hinges, booms, harnesses, support structures, power transfer, and launch retention mountings were included. It is important to note that the results presented are approximations, and in some cases revised or modified performance and mass estimates of specific designs.

Latitude-dependent delay in the responses of the equatorial electrojet and Sq currents to X-class solar flares

NASA Astrophysics Data System (ADS)

Nogueira, Paulo A. B.; Abdu, Mangalathayil A.; Souza, Jonas R.; Denardini, Clezio M.; Barbosa Neto, Paulo F.; Serra de Souza da Costa, João P.; Silva, Ana P. M.

2018-01-01

We have analyzed low-latitude ionospheric current responses to two intense (X-class) solar flares that occurred on 13 May 2013 and 11 March 2015. Sudden intensifications, in response to solar flare radiation impulses, in the Sq and equatorial electrojet (EEJ) currents, as detected by magnetometers over equatorial and low-latitude sites in South America, are studied. In particular we show for the first time that a 5 to 8 min time delay is present in the peak effect in the EEJ, with respect that of Sq current outside the magnetic equator, in response to the flare radiation enhancement. The Sq current intensification peaks close to the flare X-ray peak, while the EEJ peak occurs 5 to 8 min later. We have used the Sheffield University Plasmasphere-Ionosphere Model at National Institute for Space Research (SUPIM-INPE) to simulate the E-region conductivity enhancement as caused by the flare enhanced solar extreme ultraviolet (EUV) and soft X-rays flux. We propose that the flare-induced enhancement in neutral wind occurring with a time delay (with respect to the flare radiation) could be responsible for a delayed zonal electric field disturbance driving the EEJ, in which the Cowling conductivity offers enhanced sensitivity to the driving zonal electric field.

A Babcock-Leighton Solar Dynamo Model with Multi-cellular Meridional Circulation in Advection- and Diffusion-dominated Regimes

NASA Astrophysics Data System (ADS)

Belucz, Bernadett; Dikpati, Mausumi; Forgács-Dajka, Emese

2015-06-01

Babcock-Leighton type-solar dynamo models with single-celled meridional circulation are successful in reproducing many solar cycle features. Recent observations and theoretical models of meridional circulation do not indicate a single-celled flow pattern. We examine the role of complex multi-cellular circulation patterns in a Babcock-Leighton solar dynamo in advection- and diffusion-dominated regimes. We show from simulations that the presence of a weak, second, high-latitude reverse cell speeds up the cycle and slightly enhances the poleward branch in the butterfly diagram, whereas the presence of a second cell in depth reverses the tilt of the butterfly wing to an antisolar type. A butterfly diagram constructed from the middle of convection zone yields a solar-like pattern, but this may be difficult to realize in the Sun because of magnetic buoyancy effects. Each of the above cases behaves similarly in higher and lower magnetic diffusivity regimes. However, our dynamo with a meridional circulation containing four cells in latitude behaves distinctly differently in the two regimes, producing solar-like butterfly diagrams with fast cycles in the higher diffusivity regime, and complex branches in butterfly diagrams in the lower diffusivity regime. We also find that dynamo solutions for a four-celled pattern, two in radius and two in latitude, prefer to quickly relax to quadrupolar parity if the bottom flow speed is strong enough, of similar order of magnitude as the surface flow speed.

A BABCOCK–LEIGHTON SOLAR DYNAMO MODEL WITH MULTI-CELLULAR MERIDIONAL CIRCULATION IN ADVECTION- AND DIFFUSION-DOMINATED REGIMES

DOE Office of Scientific and Technical Information (OSTI.GOV)

Belucz, Bernadett; Forgács-Dajka, Emese; Dikpati, Mausumi, E-mail: bbelucz@astro.elte.hu, E-mail: dikpati@ucar.edu

Babcock–Leighton type-solar dynamo models with single-celled meridional circulation are successful in reproducing many solar cycle features. Recent observations and theoretical models of meridional circulation do not indicate a single-celled flow pattern. We examine the role of complex multi-cellular circulation patterns in a Babcock–Leighton solar dynamo in advection- and diffusion-dominated regimes. We show from simulations that the presence of a weak, second, high-latitude reverse cell speeds up the cycle and slightly enhances the poleward branch in the butterfly diagram, whereas the presence of a second cell in depth reverses the tilt of the butterfly wing to an antisolar type. A butterflymore » diagram constructed from the middle of convection zone yields a solar-like pattern, but this may be difficult to realize in the Sun because of magnetic buoyancy effects. Each of the above cases behaves similarly in higher and lower magnetic diffusivity regimes. However, our dynamo with a meridional circulation containing four cells in latitude behaves distinctly differently in the two regimes, producing solar-like butterfly diagrams with fast cycles in the higher diffusivity regime, and complex branches in butterfly diagrams in the lower diffusivity regime. We also find that dynamo solutions for a four-celled pattern, two in radius and two in latitude, prefer to quickly relax to quadrupolar parity if the bottom flow speed is strong enough, of similar order of magnitude as the surface flow speed.« less

On the usage of classical nucleation theory in quantification of the impact of bacterial INP on weather and climate

NASA Astrophysics Data System (ADS)

Sahyoun, Maher; Wex, Heike; Gosewinkel, Ulrich; Šantl-Temkiv, Tina; Nielsen, Niels W.; Finster, Kai; Sørensen, Jens H.; Stratmann, Frank; Korsholm, Ulrik S.

2016-08-01

Bacterial ice-nucleating particles (INP) are present in the atmosphere and efficient in heterogeneous ice-nucleation at temperatures up to -2 °C in mixed-phase clouds. However, due to their low emission rates, their climatic impact was considered insignificant in previous modeling studies. In view of uncertainties about the actual atmospheric emission rates and concentrations of bacterial INP, it is important to re-investigate the threshold fraction of cloud droplets containing bacterial INP for a pronounced effect on ice-nucleation, by using a suitable parameterization that describes the ice-nucleation process by bacterial INP properly. Therefore, we compared two heterogeneous ice-nucleation rate parameterizations, denoted CH08 and HOO10 herein, both of which are based on classical-nucleation-theory and measurements, and use similar equations, but different parameters, to an empirical parameterization, denoted HAR13 herein, which considers implicitly the number of bacterial INP. All parameterizations were used to calculate the ice-nucleation probability offline. HAR13 and HOO10 were implemented and tested in a one-dimensional version of a weather-forecast-model in two meteorological cases. Ice-nucleation-probabilities based on HAR13 and CH08 were similar, in spite of their different derivation, and were higher than those based on HOO10. This study shows the importance of the method of parameterization and of the input variable, number of bacterial INP, for accurately assessing their role in meteorological and climatic processes.

Protective capping and surface passivation of III-V nanowires by atomic layer deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dhaka, Veer, E-mail: veer.dhaka@aalto.fi; Perros, Alexander; Kakko, Joona-Pekko

2016-01-15

Low temperature (∼200 °C) grown atomic layer deposition (ALD) films of AlN, TiN, Al{sub 2}O{sub 3}, GaN, and TiO{sub 2} were tested for protective capping and surface passivation of bottom-up grown III-V (GaAs and InP) nanowires (NWs), and top-down fabricated InP nanopillars. For as-grown GaAs NWs, only the AlN material passivated the GaAs surface as measured by photoluminescence (PL) at low temperatures (15K), and the best passivation was achieved with a few monolayer thick (2Å) film. For InP NWs, the best passivation (∼2x enhancement in room-temperature PL) was achieved with a capping of 2nm thick Al{sub 2}O{sub 3}. All othermore » ALD capping layers resulted in a de-passivation effect and possible damage to the InP surface. Top-down fabricated InP nanopillars show similar passivation effects as InP NWs. In particular, capping with a 2 nm thick Al{sub 2}O{sub 3} layer increased the carrier decay time from 251 ps (as-etched nanopillars) to about 525 ps. Tests after six months ageing reveal that the capped nanostructures retain their optical properties. Overall, capping of GaAs and InP NWs with high-k dielectrics AlN and Al{sub 2}O{sub 3} provides moderate surface passivation as well as long term protection from oxidation and environmental attack.« less

Understanding Coupling of Global and Diffuse Solar Radiation with Climatic Variability

NASA Astrophysics Data System (ADS)

Hamdan, Lubna

Global solar radiation data is very important for wide variety of applications and scientific studies. However, this data is not readily available because of the cost of measuring equipment and the tedious maintenance and calibration requirements. Wide variety of models have been introduced by researchers to estimate and/or predict the global solar radiations and its components (direct and diffuse radiation) using other readily obtainable atmospheric parameters. The goal of this research is to understand the coupling of global and diffuse solar radiation with climatic variability, by investigating the relationships between these radiations and atmospheric parameters. For this purpose, we applied multilinear regression analysis on the data of National Solar Radiation Database 1991--2010 Update. The analysis showed that the main atmospheric parameters that affect the amount of global radiation received on earth's surface are cloud cover and relative humidity. Global radiation correlates negatively with both variables. Linear models are excellent approximations for the relationship between atmospheric parameters and global radiation. A linear model with the predictors total cloud cover, relative humidity, and extraterrestrial radiation is able to explain around 98% of the variability in global radiation. For diffuse radiation, the analysis showed that the main atmospheric parameters that affect the amount received on earth's surface are cloud cover and aerosol optical depth. Diffuse radiation correlates positively with both variables. Linear models are very good approximations for the relationship between atmospheric parameters and diffuse radiation. A linear model with the predictors total cloud cover, aerosol optical depth, and extraterrestrial radiation is able to explain around 91% of the variability in diffuse radiation. Prediction analysis showed that the linear models we fitted were able to predict diffuse radiation with efficiency of test adjusted R2 values equal to 0.93, using the data of total cloud cover, aerosol optical depth, relative humidity and extraterrestrial radiation. However, for prediction purposes, using nonlinear terms or nonlinear models might enhance the prediction of diffuse radiation.

Low cost solar array project. Cell and module formation research area. Process research of non-CZ silicon material

NASA Technical Reports Server (NTRS)

1983-01-01

Liquid diffusion masks and liquid dopants to replace the more expensive CVD SiO2 mask and gaseous diffusion processes were investigated. Silicon pellets were prepared in the silicon shot tower; and solar cells were fabricated using web grown where the pellets were used as a replenishment material. Verification runs were made using the boron dopant and liquid diffusion mask materials. The average of cells produced in these runs was 13%. The relationship of sheet resistivity, temperature, gas flows, and gas composition for the diffusion of the P-8 liquid phosphorus solution was investigated. Solar cells processed from web grown from Si shot material were evaluated, and results qualified the use of the material produced in the shot tower for web furnace feed stock.

Scalable InP integrated wavelength selector based on binary search.

PubMed

Calabretta, Nicola; Stabile, Ripalta; Albores-Mejia, Aaron; Williams, Kevin A; Dorren, Harm J S

2011-10-01

We present an InP monolithically integrated wavelength selector that implements a binary search for selecting one from N modulated wavelengths. The InP chip requires only log(2)N optical filters and log(2)N optical switches. Experimental results show nanosecond reconfiguration and error-free wavelength selection of four modulated wavelengths with 2 dB of power penalty. © 2011 Optical Society of America

Development of the Smart Weapons Operability Enhancement Interim Thermal Model

DTIC Science & Technology

1991-03-11

Absorptivity HFOL Vegetation Height (cm) (b.) hiveg.inp High Vegetation Parameters for VEGGIE 0.70 1.0 0.85 0.96 50.00 (c.) mnedveg.inp Medium Vegetation...Parameters for VEGGIE 0.40 1.0 0.85 0.96 100.00 (d.) grass.inp Grassland Parameters for VEGGIE 0.50 1.0 0.98 0.80 50.00 66 Table B-8. Input Records in

Preferentially etched epitaxial liftoff of InP material

NASA Technical Reports Server (NTRS)

Bailey, Sheila G. (Inventor); Wilt, David M. (Inventor); Deangelo, Frank L. (Inventor)

1995-01-01

The present invention is directed toward a method of removing epitaxial substrates from host substrates. A sacrificial release layer of ternary material is placed on the substrate. A layer of InP is then placed on the ternary material. Afterward a layer of wax is applied to the InP layer to apply compressive force and an etchant material is used to remove the sacrificial release layer.

Preferentially Etched Epitaxial Liftoff of InP Material

NASA Technical Reports Server (NTRS)

Bailey, Sheila G. (Inventor); Wilt, David M. (Inventor); DeAngelo, Frank L. (Inventor)

1997-01-01

The present invention is directed toward a method of removing epitaxial substrates from host substrates. A sacrificial release layer of ternary material is placed on the substrate. A layer of InP is then placed on the ternary material. Afterward a layer of wax is applied to the InP layer to apply compressive force and an etchant material is used to remove the sacrificial release layer.

When is an INP not an INP?

NASA Astrophysics Data System (ADS)

Simpson, Emma; Connolly, Paul; McFiggans, Gordon

2016-04-01

Processes such as precipitation and radiation depend on the concentration and size of different hydrometeors within clouds therefore it is important to accurately predict them in weather and climate models. A large fraction of clouds present in our atmosphere are mixed phase; contain both liquid and ice particles. The number of drops and ice crystals present in mixed phase clouds strongly depends on the size distribution of aerosols. Cloud condensation nuclei (CCN), a subset of atmospheric aerosol particles, are required for liquid drops to form in the atmosphere. These particles are ubiquitous in the atmosphere. To nucleate ice particles in mixed phase clouds ice nucleating particles (INP) are required. These particles are rarer than CCN. Here we investigate the case where CCN and INPs are in direct competition with each other for water vapour within a cloud. Focusing on the immersion and condensation modes of freezing (where an INP must be immersed within a liquid drop before it can freeze) we show that the presence of CCN can suppress the formation of ice. CCN are more hydrophilic than IN and as such are better able to compete for water vapour than, typically insoluble, INPs. Therefore water is more likely to condense onto a CCN than INP, leaving the INP without enough condensed water on it to be able to freeze in the immersion or condensation mode. The magnitude of this suppression effect strongly depends on a currently unconstrained quantity. Here we refer to this quantity as the critical mass of condensed water required for freezing, Mwc. Mwc is the threshold amount of water that must be condensed onto a INP before it can freeze in the immersion or condensation mode. Using the detailed cloud parcel model, Aerosol-Cloud-Precipiation-Interaction Model (ACPIM), developed at the University of Manchester we show that if only a small amount of water is required for freezing there is little suppression effect and if a large amount of water is required there is a large suppression effect. In this poster possible ways to constrain Mwc are discussed as well as conditions where the suppression effect is likely to be greatest. Key Words: Clouds, aerosol, CCN, IN, modelling

Insights Regarding Ice Nucleating Particle Measurement Capabilities from Laboratory and Field Measurements During the Fifth International Ice Nucleation Workshop

NASA Astrophysics Data System (ADS)

DeMott, P. J.; Mohler, O.; Cziczo, D. J.; Hiranuma, N.; Brooks, S. D.; Petters, M.

2017-12-01

Improvement in the ability to quantify the role of aerosols in primary ice formation in clouds is vital to improving prediction of natural and anthropogenic impacts on cold cloud properties and reducing uncertainties in climate predictions. A host of common and new methods for quantifying the atmospheric abundance of ice nucleating particles (INPs) have recently been developed. To realize the utility of such data for numerical model parameterization development and validation, it is important to understand similarities, differences, and biases in different methods. To achieve this goal, it is common to challenge instruments with a range of aerosol types in laboratory studies. Only a few comparisons have occurred in atmospheric situations. This presentation highlights comparisons made in laboratory and field phases of the Fifth International Ice Nucleation workshop (FIN) during 2015. The FIN-2 laboratory workshop was conducted at the AIDA facility of the Karlsruhe Institute of Technology, involving nine real-time INP instruments and several sampling methods for wet suspensions and filter collection and resuspension for INP measurements. The FIN-3 atmospheric activity was conducted at the Desert Research Institute's Storm Peak Laboratory (SPL), with a reduced set of participants. Lessons and insights were gained during analyses of data from both workshops regarding the capabilities and comparability of present ice nucleation measurement systems. The FIN-2 and FIN-3 results show typical one order of magnitude agreement within basic measurement types and overall for characterizing the concentrations (over several orders of magnitude dynamic range from -5 to -35 C) of a variety of INP types and ambient INPs active in the immersion-freezing mode. Discrepancies are least for lab sampling of natural soil particle INPs and greatest for materials with steep d[INP]/dT functions, such as K-feldspar or bacterial INPs processed warmer than -8 C. Varied reasons and implications for atmospheric measurements will be discussed. FIN-3 ambient studies also showed correspondence for the first time between online and offline assessment of the contrasting INP concentrations active in deposition and immersion freezing (much higher numbers) regimes. Major contributions from the FIN participant teams are acknowledged.

[The Detection of Ultra-Broadband Terahertz Spectroscopy of InP Wafer by Using Coherent Heterodyne Time-Domain Spectrometer].

PubMed

Zhang, Liang-liang; Zhang, Rui; Xu, Xiao-yan; Zhang, Cun-lin

2016-02-01

Indium Phosphide (InP) has attracted great physical interest because of its unique characteristics and is indispensable to both optical and electronic devices. However, the optical property of InP in the terahertz range (0. 110 THz) has not yet been fully characterized and systematically studied. The former researches about the properties of InP concentrated on the terahertz frequency between 0.1 and 4 THz. The terahertz optical properties of the InP in the range of 4-10 THz are still missing. It is fairly necessary to fully understand its properties in the entire terahertz range, which results in a better utilization as efficient terahertz devices. In this paper, we study the optical properties of undoped (100) InP wafer in the ultra-broad terahertz frequency range (0.5-18 THz) by using air-biased-coherent-detection (ABCD) system, enabling the coherent detection of terahertz wave in gases, which leads to a significant improvement on the dynamic range and sensitivity of the system. The advantage of this method is broad frequency bandwidth from 0.2 up to 18 THz which is only mainly limited by laser pulse duration since it uses ionized air as terahertz emitter and detector instead of using an electric optical crystal or photoconductive antenna. The terahertz pulse passing through the InP wafer is delayed regarding to the reference pulse and has much lower amplitude. In addition, the frequency spectrum amplitude of the terahertz sample signal drops to the noise floor level from 6.7 to 12.1 THz. At the same time InP wafer is opaque at the frequencies spanning from 6.7 to 12.1 THz. In the frequency regions of 0.8-6.7 and 12.1-18 THz it has relativemy low absorption coefficient. Meanwhile, the refractive index increases monotonously in the 0.8-6.7 THz region and 12.1-18 THz region. These findings will contribute to the design of InP based on nonlinear terahertz devices.

Lateral spreading of Au contacts on InP

NASA Technical Reports Server (NTRS)

Fatemi, Navid S.; Weizer, Victor G.

1990-01-01

The contact spreading phenomenon observed when small area Au contacts on InP are annealed at temperatures above about 400 C was investigated. It was found that the rapid lateral expansion of the contact metallization which consumes large quantities of InP during growth is closely related to the third stage in the series of solid state reactions that occur between InP and Au, i.e., to the Au3In-to-Au9In4 transition. Detailed descriptions are presented of both the spreading process and the Au3In-to-Au9In4 transition along with arguments that the two processes are manifestations of the same basic phenomenon.

Graphene enhanced field emission from InP nanocrystals.

PubMed

Iemmo, L; Di Bartolomeo, A; Giubileo, F; Luongo, G; Passacantando, M; Niu, G; Hatami, F; Skibitzki, O; Schroeder, T

2017-12-08

We report the observation of field emission (FE) from InP nanocrystals (NCs) epitaxially grown on an array of p-Si nanotips. We prove that FE can be enhanced by covering the InP NCs with graphene. The measurements are performed inside a scanning electron microscope chamber with a nano-controlled W-thread used as an anode. We analyze the FE by Fowler-Nordheim theory and find that the field enhancement factor increases monotonically with the spacing between the anode and the cathode. We also show that InP/p-Si junction has a rectifying behavior, while graphene on InP creates an ohmic contact. Understanding the fundamentals of such nanojunctions is key for applications in nanoelectronics.

Graphene enhanced field emission from InP nanocrystals

NASA Astrophysics Data System (ADS)

Iemmo, L.; Di Bartolomeo, A.; Giubileo, F.; Luongo, G.; Passacantando, M.; Niu, G.; Hatami, F.; Skibitzki, O.; Schroeder, T.

2017-12-01

We report the observation of field emission (FE) from InP nanocrystals (NCs) epitaxially grown on an array of p-Si nanotips. We prove that FE can be enhanced by covering the InP NCs with graphene. The measurements are performed inside a scanning electron microscope chamber with a nano-controlled W-thread used as an anode. We analyze the FE by Fowler-Nordheim theory and find that the field enhancement factor increases monotonically with the spacing between the anode and the cathode. We also show that InP/p-Si junction has a rectifying behavior, while graphene on InP creates an ohmic contact. Understanding the fundamentals of such nanojunctions is key for applications in nanoelectronics.

Process research of non-cz silicon material. Low cost solar array project, cell and module formation research area

NASA Technical Reports Server (NTRS)

1982-01-01

Liquid diffusion masks and liquid applied dopants to replace the CVD Silox masking and gaseous diffusion operations specified for forming junctions in the Westinghouse baseline process sequence for producing solar cells from dendritic web silicon were investigated.

Removal of uranium (VI) from aqueous systems by nanoscale zero-valent iron particles suspended in carboxy-methyl cellulose

NASA Astrophysics Data System (ADS)

Popescu (Hoştuc), Ioana-Carmen; Filip, Petru; Humelnicu, Doina; Humelnicu, Ionel; Scott, Thomas Bligh; Crane, Richard Andrew

2013-11-01

Carboxy-methyl-cellulose (CMC), a common "delivery vehicle" for the subsurface deployment of iron nanoparticles (INP) has been tested in the current work for the removal of aqueous uranium from synthetic water samples. A comparison of the removal of aqueous uranium from solutions using carboxy-methyl-cellulose with and without iron nanoparticles (CMC-INP and CMC, respectively) was tested over a 48 h reaction period. Analysis of liquid samples using spectrophotometry determined a maximum sorption capacity of uranium, Qmax, of 185.18 mg/g and 322.58 mg/g for CMC and CMC-INP respectively, providing strong evidence of an independent aqueous uranium removal ability exhibited by CMC. The results point out that CMC provides an additional capacity for aqueous uranium removal. Further tests are required to determine whether similar behaviour will be observed for other aqueous contaminant species and if the presence of CMC within a INP slurry inhibits or aids the reactivity, reductive capacity and affinity of INP for aqueous contaminant removal.

Terahertz-radiation generation in low-temperature InGaAs epitaxial films on (100) and (411) InP substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Galiev, G. B., E-mail: galiev-galib@mail.ru; Grekhov, M. M.; Kitaeva, G. Kh.

2017-03-15

The spectrum and waveforms of broadband terahertz-radiation pulses generated by low-temperature In{sub 0.53}Ga{sub 0.47}As epitaxial films under femtosecond laser pumping are investigated by terahertz time-resolved spectroscopy. The In{sub 0.53}Ga{sub 0.47}As films are fabricated by molecular-beam epitaxy at a temperature of 200°C under different arsenic pressures on (100)-oriented InP substrates and, for the first time, on (411)A InP substrates. The surface morphology of the samples is studied by atomic-force microscopy and the structural quality is established by high-resolution X-ray diffraction analysis. It is found that the amplitude of terahertz radiation from the LT-InGaAs layers on the (411)A InP substrates exceeds thatmore » from similar layers formed on the (100) InP substrates by a factor of 3–5.« less

Effect of Zinc Incorporation on the Performance of Red Light Emitting InP Core Nanocrystals.

PubMed

Xi, Lifei; Cho, Deok-Yong; Besmehn, Astrid; Duchamp, Martial; Grützmacher, Detlev; Lam, Yeng Ming; Kardynał, Beata E

2016-09-06

This report presents a systematic study on the effect of zinc (Zn) carboxylate precursor on the structural and optical properties of red light emitting InP nanocrystals (NCs). NC cores were assessed using X-ray photoelectron spectroscopy (XPS), X-ray absorption spectroscopy (XAS), energy-dispersive X-ray spectroscopy (EDX), and high-resolution transmission electron microscopy (HRTEM). When moderate Zn:In ratios in the reaction pot were used, the incorporation of Zn in InP was insufficient to change the crystal structure or band gap of the NCs, but photoluminescence quantum yield (PLQY) increased dramatically compared with pure InP NCs. Zn was found to incorporate mostly in the phosphate layer on the NCs. PL, PLQY, and time-resolved PL (TRPL) show that Zn carboxylates added to the precursors during NC cores facilitate the synthesis of high-quality InP NCs by suppressing nonradiative and sub-band-gap recombination, and the effect is visible also after a ZnS shell is grown on the cores.

Reverse Current Characteristics of InP Gunn Diodes for W-Band Waveguide Applications.

PubMed

Kim, Hyun-Seok; Heo, Jun-Woo; Chol, Seok-Gyu; Ko, Dong-Sik; Rhee, Jin-Koo

2015-07-01

InP is considered as the most promising material for millimeter-wave laser-diode applications owing to its superior noise performance and wide operating frequency range of 75-110 GHz. In this study, we demonstrate the fabrication of InP Gunn diodes with a current-limiting structure using rapid thermal annealing to modulate the potential height formed between an n-type InP active layer and a cathode contact. We also explore the reverse current characteristics of the InP Gunn diodes. Experimental results indicate a maximum anode current and an oscillation frequency of 200 mA and 93.53 GHz, respectively. The current-voltage characteristics are modeled by considering the Schottky and ohmic contacts, work function variations, negative differential resistance (NDR), and tunneling effect. Although no direct indication of the NDR is observed, the simulation results match the measured data well. The modeling results show that the NDR effect is always present but is masked because of electron emission across the shallow Schottky barrier.

Oxidation of InP nanowires: a first principles molecular dynamics study.

PubMed

Berwanger, Mailing; Schoenhalz, Aline L; Dos Santos, Cláudia L; Piquini, Paulo

2016-11-16

InP nanowires are candidates for optoelectronic applications, and as protective capping layers of III-V core-shell nanowires. Their surfaces are oxidized under ambient conditions which affects the nanowire physical properties. The majority of theoretical studies of InP nanowires, however, do not take into account the oxide layer at their surfaces. In this work we use first principles molecular dynamics electronic structure calculations to study the first steps in the oxidation process of a non-saturated InP nanowire surface as well as the properties of an already oxidized surface of an InP nanowire. Our calculations show that the O 2 molecules dissociate through several mechanisms, resulting in incorporation of O atoms into the surface layers. The results confirm the experimental observation that the oxidized layers become amorphous but the non-oxidized core layers remain crystalline. Oxygen related bonds at the oxidized layers introduce defective levels at the band gap region, with greater contributions from defects involving In-O and P-O bonds.

Photosensitization of InP/ZnS quantum dots for anti-cancer and anti-microbial applications

NASA Astrophysics Data System (ADS)

Nadeau, Jay; Chibli, Hicham; Carlini, Lina

2012-03-01

Cadmium-free quantum dots (QDs), such as those made from InP, show similar optical properties to those containing toxic heavy metals and thus provide a promising alternative for imaging and therapeutics. The band gap of InP is similar to that of CdTe, so photosensitization of InP QDs with porphyrins or other dyes should lead to generation of reactive oxygen species, useful for targeted destruction of malignant cells or pathogenic bacteria. Here we show the results of measurements of singlet oxygen and superoxide generation from InP QDs with single and double ZnS shells compared with CdTe and CdSe/ZnS. Reactive oxygen species are measured using colorimetric or fluorescent reporter assays and spin-trap electron paramagnetic resonance (EPR) spectroscopy. We find that the size of the InP QDs and the thickness of the ZnS shell both strongly influence ROS generation. These results suggest future approaches to the design of therapeutic nanoparticles.

Acquisition of a High Performance Computer Cluster for Materials Research and Education

DTIC Science & Technology

2015-04-17

separation in all-organic and hybrid organic- inorganic solar cells. The outcome of the project 1. REPORT DATE (DD-MM-YYYY) 4. TITLE AND SUBTITLE 13...diffusion and interfacial charge separation in all-organic and hybrid organic- inorganic solar cells. The outcome of the project is the development...simulations to predict charge carrier mobilities, exciton diffusion and interfacial charge separation in all- organic and hybrid organic- inorganic solar

Local effects of partly-cloudy skies on solar and emitted radiation

NASA Technical Reports Server (NTRS)

Whitney, D. A.; Venable, D. D.

1982-01-01

A computer automated data acquisition system for atmospheric emittance, and global solar, downwelled diffuse solar, and direct solar irradiances is discussed. Hourly-integrated global solar and atmospheric emitted radiances were measured continuously from February 1981 and hourly-integrated diffuse solar and direct solar irradiances were measured continuously from October 1981. One-minute integrated data are available for each of these components from February 1982. The results of the correlation of global insolation with fractional cloud cover for the first year's data set. A February data set, composed of one-minute integrated global insolation and direct solar irradiance, cloud cover fractions, meteorological data from nearby weather stations, and GOES East satellite radiometric data, was collected to test the theoretical model of satellite radiometric data correlation and develop the cloud dependence for the local measurement site.

The potential impact of multidimesional geriatric assessment in the social security system.

PubMed

Corbi, Graziamaria; Ambrosino, Immacolata; Massari, Marco; De Lucia, Onofrio; Simplicio, Sirio; Dragone, Michele; Paolisso, Giuseppe; Piccioni, Massimo; Ferrara, Nicola; Campobasso, Carlo Pietro

2018-01-12

To evaluate the efficacy of multidimensional geriatric assessment (MGA/CGA) in patients over 65 years old in predicting the release of the accompaniment allowance (AA) indemnity by a Local Medico-Legal Committee (MLC-NHS) and by the National Institute of Social Security Committee (MLC-INPS). In a longitudinal observational study, 200 Italian elder citizens requesting AA were first evaluated by MLC-NHS and later by MLC-INPS. Only MLC-INPS performed a MGA/CGA (including SPMSQ, Barthel Index, GDS-SF, and CIRS). This report was written according to the STROBE guidelines. The data analysis was performed on January 2016. The evaluation by the MLC-NHS and by the MLC-INPS was in agreement in 66% of cases. In the 28%, the AA benefit was recognized by the MLC-NHS, but not by the MLC-INPS. By the multivariate analysis, the best predictors of the AA release, by the MLC-NHS, were represented by gender and the Barthel Index score. The presence of carcinoma, the Barthel Index score, and the SPMQ score were the best predictors for the AA release by MLC-INPS. MGA/CGA could be useful in saving financial resources reducing the risk of incorrect indemnity release. It can improve the accuracy of the impairment assessment in social security system.

Impact of P/In flux ratio and epilayer thickness on faceting for nanoscale selective area growth of InP by molecular beam epitaxy.

PubMed

Fahed, M; Desplanque, L; Coinon, C; Troadec, D; Wallart, X

2015-07-24

The impact of the P/In flux ratio and the deposited thickness on the faceting of InP nanostructures selectively grown by molecular beam epitaxy (MBE) is reported. Homoepitaxial growth of InP is performed inside 200 nm wide stripe openings oriented either along a [110] or [1-10] azimuth in a 10 nm thick SiO2 film deposited on an InP(001) substrate. When varying the P/In flux ratio, no major shape differences are observed for [1-10]-oriented apertures. On the other hand, the InP nanostructure cross sections strongly evolve for [110]-oriented apertures for which (111)B facets are more prominent and (001) ones shrink for large P/In flux ratio values. These results show that the growth conditions allow tailoring the nanocrystal shape. They are discussed in the framework of the equilibrium crystal shape model using existing theoretical calculations of the surface energies of different low-index InP surfaces as a function of the phosphorus chemical potential, directly related to the P/In ratio. Experimental observations strongly suggest that the relative (111)A surface energy is probably smaller than the calculated value. We also discuss the evolution of the nanostructure shape with the InP-deposited thickness.

Assembly of phosphide nanocrystals into porous networks: formation of InP gels and aerogels.

PubMed

Hitihami-Mudiyanselage, Asha; Senevirathne, Keerthi; Brock, Stephanie L

2013-02-26

The applicability of sol-gel nanoparticle assembly routes, previously employed for metal chalcogenides, to phosphides is reported for the case of InP. Two different sizes (3.5 and 6.0 nm) of InP nanoparticles were synthesized by solution-phase arrested precipitation, capped with thiolate ligands, and oxidized with H₂O₂ or O₂/light to induce gel formation. The gels were aged, solvent-exchanged, and then supercritically dried to obtain aerogels with both meso- (2-50 nm) and macropores (>50 nm) and accessible surface areas of ∼200 m²/g. Aerogels showed higher band gap values relative to precursor nanoparticles, suggesting that during the process of assembling nanoparticles into 3D architectures, particle size reduction may have taken place. In contrast to metal chalcogenide gelation, InP gels did not form using tetranitromethane, a non-oxygen-transferring oxidant. The requirement of an oxygen-transferring oxidant, combined with X-ray photoelectron spectroscopy data showing oxidized phosphorus, suggests gelation is occurring due to condensation of phosphorus oxoanionic moieties generated at the interfaces. The ability to link discrete InP nanoparticles into a 3D porous network while maintaining quantum confinement is expected to facilitate exploitation of nanostructured InP in solid-state devices.

Photoluminescence study of as-grown vertically standing wurtzite InP nanowire ensembles.

PubMed

Iqbal, Azhar; Beech, Jason P; Anttu, Nicklas; Pistol, Mats-Erik; Samuelson, Lars; Borgström, Magnus T; Yartsev, Arkady

2013-03-22

We demonstrate a method that enables the study of photoluminescence of as-grown nanowires on a native substrate by non-destructively suppressing the contribution of substrate photoluminescence. This is achieved by using polarized photo-excitation and photoluminescence and by making an appropriate choice of incident angle of both excitation beam and photoluminescence collection direction. Using TE-polarized excitation at a wavelength of 488 nm at an incident angle of ∼70° we suppress the InP substrate photoluminescence relative to that of the InP nanowires by about 80 times. Consequently, the photoluminescence originating from the nanowires becomes comparable to and easily distinguishable from the substrate photoluminescence. The measured photoluminescence, which peaks at photon energies of ∼1.35 eV and ∼1.49 eV, corresponds to the InP substrate with zinc-blende crystal structure and to the InP nanowires with wurtzite crystal structure, respectively. The photoluminescence quantum yield of the nanowires was found to be ∼20 times lower than that of the InP substrate. The nanowires, grown vertically in a random ensemble, neither exhibit substantial emission polarization selectivity to the axis of the nanowires nor follow excitation polarization preferences observed previously for a single nanowire.

Perturbation of bacterial ice nucleation activity by a grass antifreeze protein.

PubMed

Tomalty, Heather E; Walker, Virginia K

2014-09-26

Certain plant-associating bacteria produce ice nucleation proteins (INPs) which allow the crystallization of water at high subzero temperatures. Many of these microbes are considered plant pathogens since the formed ice can damage tissues, allowing access to nutrients. Intriguingly, certain plants that host these bacteria synthesize antifreeze proteins (AFPs). Once freezing has occurred, plant AFPs likely function to inhibit the growth of large damaging ice crystals. However, we postulated that such AFPs might also serve as defensive mechanisms against bacterial-mediated ice nucleation. Recombinant AFP derived from the perennial ryegrass Lolium perenne (LpAFP) was combined with INP preparations originating from the grass epiphyte, Pseudomonas syringae. The presence of INPs had no effect on AFP activity, including thermal hysteresis and ice recrystallization inhibition. Strikingly, the ice nucleation point of the INP was depressed up to 1.9°C in the presence of LpAFP, but a recombinant fish AFP did not lower the INP-imposed freezing point. Assays with mutant LpAFPs and the visualization of bacterially-displayed fluorescent plant AFP suggest that INP and LpAFP can interact. Thus, we postulate that in addition to controlling ice growth, plant AFPs may also function as a defensive strategy against the damaging effects of ice-nucleating bacteria. Crown Copyright © 2014. Published by Elsevier Inc. All rights reserved.

Particle acceleration at shocks in the inner heliosphere

NASA Astrophysics Data System (ADS)

Parker, Linda Neergaard

This dissertation describes a study of particle acceleration at shocks via the diffusive shock acceleration mechanism. Results for particle acceleration at both quasi-parallel and quasi-perpendicular shocks are presented to address the question of whether there are sufficient particles in the solar wind thermal core, modeled as either a Maxwellian or kappa- distribution, to account for the observed accelerated spectrum. Results of accelerating the theoretical upstream distribution are compared to energetic observations at 1 AU. It is shown that the particle distribution in the solar wind thermal core is sufficient to explain the accelerated particle spectrum downstream of the shock, although the shape of the downstream distribution in some cases does not follow completely the theory of diffusive shock acceleration, indicating possible additional processes at work in the shock for these cases. Results show good to excellent agreement between the theoretical and observed spectral index for one third to one half of both quasi-parallel and quasi-perpendicular shocks studied herein. Coronal mass ejections occurring during periods of high solar activity surrounding solar maximum can produce shocks in excess of 3-8 shocks per day. During solar minimum, diffusive shock acceleration at shocks can generally be understood on the basis of single independent shocks and no other shock necessarily influences the diffusive shock acceleration mechanism. In this sense, diffusive shock acceleration during solar minimum may be regarded as Markovian. By contrast, diffusive shock acceleration of particles at periods of high solar activity (e.g. solar maximum) see frequent, closely spaced shocks that include the effects of particle acceleration at preceding and following shocks. Therefore, diffusive shock acceleration of particles at solar maximum cannot be modeled on the basis of diffusive shock acceleration as a single, independent shock and the process is essentially non-Markovian. A multiple shock model is developed based in part on the box model of (Protheroe and Stanev, 1998; Moraal and Axford, 1983; Ball and Kirk, 1992; Drury et al. 1999) that accelerates particles at multiple shocks and decompresses the particles between shocks via two methods. The first method of decompression is based on the that used by Melrose and Pope (1993), which adiabatically decompresses particles between shocks. The second method solves the cosmic ray transport equation and adiabatically decompresses between shocks and includes the loss of particles through convection and diffusion. The transport method allows for the inclusion of a temporal variability and thus allows for a more representative frequency distribution of shocks. The transport method of decompression and loss is used to accelerate particles at seventy-three shocks in a thirty day time period. Comparisons with observations taken at 1 AU during the same time period are encouraging as the model is able to reproduce the observed amplitude of the accelerated particles and in part the variability. This work provides the basis for developing more sophisticated models that can be applied to a suite of observations

A numerical model for charge transport and energy conversion of perovskite solar cells.

PubMed

Zhou, Yecheng; Gray-Weale, Angus

2016-02-14

Based on the continuity equations and Poisson's equation, we developed a numerical model for perovskite solar cells. Due to different working mechanisms, the model for perovskite solar cells differs from that of silicon solar cells and Dye Sensitized Solar Cells. The output voltage and current are calculated differently, and in a manner suited in particular to perovskite organohalides. We report a test of our equations against experiment with good agreement. Using this numerical model, it was found that performances of solar cells increase with charge carrier's lifetimes, mobilities and diffusion lengths. The open circuit voltage (Voc) of a solar cell is dependent on light intensities, and charge carrier lifetimes. Diffusion length and light intensity determine the saturated current (Jsc). Additionally, three possible guidelines for the design and fabrication of perovskite solar cells are suggested by our calculations. Lastly, we argue that concentrator perovskite solar cells are promising.

Characterization and first results of an ice nucleating particle measurement system based on counterflow virtual impactor technique

NASA Astrophysics Data System (ADS)

Schenk, L. P.; Mertes, S.; Kästner, U.; Frank, F.; Nillius, B.; Bundke, U.; Rose, D.; Schmidt, S.; Schneider, J.; Worringen, A.; Kandler, K.; Bukowiecki, N.; Ebert, M.; Curtius, J.; Stratmann, F.

2014-10-01

A specific instrument combination was developed to achieve a better microphysical and chemical characterization of atmospheric aerosol particles that have the potential to act as ice nucleating particles (INP). For this purpose a pumped counterflow virtual impactor system called IN-PCVI was set up and characterized to separate ice particles that had been activated on INP in the Fast Ice Nucleus Chamber (FINCH) from interstitial, non-activated particles. This coupled setup consisting of FINCH (ice particle activation and counting), IN-PCVI (INP separation and preparation), and further aerosol instrumentation (INP characterization) had been developed for the application in field experiments. The separated INP were characterized on-line with regard to their total number concentration, number size distribution and chemical composition, especially with the Aircraft-based Laser Ablation Aerosol Mass Spectrometer ALABAMA. Moreover, impactor samples for electron microscopy were taken. Due to the coupling the IN-PCVI had to be operated with different flow settings than known from literature, which required a further characterization of its cut-off-behavior. Taking the changed cut-off-behavior into account, the INP number concentration measured by the IN-PCVI system was in good agreement with the one detected by the FINCH optics for water saturation ratios up to 1.01 (ice saturation ratios between 1.21-1.34 and temperatures between -18 and -26 °C). First field results of INP properties are presented which were gained during the INUIT-JFJ/CLACE 2013 campaign at the high altitude research station Jungfraujoch in the Bernese Alps, Switzerland (3580 m a.s.l.).

The Governance of Indigenous Natural Products in Namibia: A Policy Network Analysis.

PubMed

Ndeinoma, Albertina; Wiersum, K Freerk; Arts, Bas

2018-01-09

At the end of the 20th century, optimism existed that non-timber forest products (NTFPs) can form an integral part in conservation and development strategies. However, there is limited knowledge on how the different stakeholders could relate to the state or to each other in promoting commercialization of NTFPs. Applying the policy network as an analytical framework, we investigated the structural patterns of actor relations in the governance structure of indigenous natural products (INPs) in Namibia, to understand the implications of such relations on INP policy process. The findings indicate that the INP policy network in Namibia is multi-dimensional, consisting of the Indigenous Plant Task Team (IPTT)-the key governance structure for resource mobilization and information sharing; and functional relations which serve specific roles in the INP value chain. The existing relations have facilitated policy development particularly for heavily regulated species, such as devil's claw; but for other species, only incremental changes are observed in terms of small-scale processing facilities for value addition and exclusive purchase agreements for sustainable sourcing of INPs. Participation of primary producers, private actors and quality standardization bodies is limited in INPs governance structures, which narrow the scope of information sharing. Consequently, despite that the IPTT has fostered publicly funded explorative pilot projects, ranging from production to marketing of INPs, there are no clear guidelines how these projects results can be transferred to private entities for possible commercialization. Further collaboration and information sharing is needed to guide public sector relations with the private entities and cooperatives.

Optically enhanced photon recycling in mechanically stacked multijunction solar cells

DOE PAGES

Steiner, Myles A.; Geisz, John F.; Ward, J. Scott; ...

2015-11-09

Multijunction solar cells can be fabricated by mechanically bonding together component cells that are grown separately. Here, we present four-junction four-terminal mechanical stacks composed of GaInP/GaAs tandems grown on GaAs substrates and GaInAsP/GaInAs tandems grown on InP substrates. The component cells were bonded together with a low-index transparent epoxy that acts as an angularly selective reflector to the GaAs bandedge luminescence, while simultaneously transmitting nearly all of the subbandgap light. As determined by electroluminescence measurements and optical modeling, the GaAs subcell demonstrates a higher internal radiative limit and, thus, higher subcell voltage, compared with GaAs subcells without the epoxy reflector.more » The best cells demonstrate 38.8 ± 1.0% efficiency under the global spectrum at 1000 W/m 2 and ~ 42% under the direct spectrum at ~100 suns. As a result, eliminating the series resistance is the key challenge for further improving the concentrator cells.« less

Separation of ice crystals from interstitial aerosol particles using virtual impaction at the Fifth International Ice Nucleation Workshop FIN-3

NASA Astrophysics Data System (ADS)

Roesch, M.; Garimella, S.; Roesch, C.; Zawadowicz, M. A.; Katich, J. M.; Froyd, K. D.; Cziczo, D. J.

2016-12-01

In this study, a parallel-plate ice chamber, the SPectrometer for Ice Nuclei (SPIN, DMT Inc.) was combined with a pumped counterflow virtual impactor (PCVI, BMI Inc.) to separate ice crystals from interstitial aerosol particles by their aerodynamic size. These measurements were part of the FIN-3 workshop, which took place in fall 2015 at Storm Peak Laboratory (SPL), a high altitude mountain top facility (3220 m m.s.l.) in the Rocky Mountains. The investigated particles were sampled from ambient air and were exposed to cirrus-like conditions inside SPIN (-40°C, 130% RHice). Previous SPIN experiments under these conditions showed that ice crystals were found to be in the super-micron range. Connected to the outlet of the ice chamber, the PCVI was adjusted to separate all particulates aerodynamically larger than 3.5 micrometer to the sample flow while smaller ones were rejected and removed by a pump flow. Using this technique reduces the number of interstitial aerosol particles, which could bias subsequent ice nucleating particle (INP) analysis. Downstream of the PCVI, the separated ice crystals were evaporated and the flow with the remaining INPs was split up to a particle analysis by laser mass spectrometry (PALMS) instrument a laser aerosol spectrometer (LAS, TSI Inc.) and a single particle soot photometer (SP2, DMT Inc.). Based on the sample flow and the resolution of the measured particle data, the lowest concentration threshold for the SP2 instrument was 294 INP L-1 and for the LAS instrument 60 INP L-1. Applying these thresholds as filters to the measured PALMS time series 944 valid INP spectra using the SP2 threshold and 445 valid INP spectra using the LAS threshold were identified. A sensitivity study determining the number of good INP spectra as a function of the filter threshold concentration showed a two-phase linear growth when increasing the threshold concentration showing a breakpoint around 100 INP L-1.

Spatial and temporal distributions of ice nucleating particles during the Atmospheric Radiation Measurement (ARM) Cloud Aerosol Precipitation Experiment (ACAPEX)

NASA Astrophysics Data System (ADS)

Levin, E. J.; DeMott, P. J.; Suski, K. J.; Boose, Y.; Hill, T. C. J.; McCluskey, C. S.; Schill, G. P.; Duncan, D.; Al-Mashat, H.; Prather, K. A.; Sedlacek, A. J., III; Tomlinson, J. M.; Mei, F.; Hubbe, J. M.; Pekour, M. S.; Leung, L. R.; Kreidenweis, S. M.

2016-12-01

California is currently under drought conditions and changes in precipitation due to future climate change scenarios are uncertain. Thus, understanding the controlling factors for precipitation in this region, and having the capability to accurately model these scenarios, is important. A crucial area in understanding precipitation is in the interplay between atmospheric moisture and aerosols. Specifically, ice nucleation in clouds is an important process controlling precipitation formation. A major component of CA's yearly precipitation comes from wintertime atmospheric river (AR) events which were the focus of the 2015 Atmospheric Radiation Measurement (ARM) Cloud Aerosol Precipitation Experiment (ACAPEX) and CalWater 2 campaigns. These two campaigns provided sampling platforms on four aircraft, including the ARM Aerial Facility G-1, as well as the NOAA Ron Brown research vessel and at a ground station at Bodega Bay, CA. Measurements of ice nucleating particles (INPs) were made with the Colorado State University (CSU) Continuous Flow Diffusion Chamber (CFDC) aboard the G-1 and at Bodega Bay, and using aerosol filter collections on these platforms as well as the Ron Brown for post-processing via immersion freezing in the CSU Ice Spectrometer. Aerosol composition was measured aboard the G-1 with the Aerosol Time-of-Flight Mass Spectrometer (ATOFMS). Both the CFDC and ATOFMS sampled off of an isokinetic inlet when flying in clear air and a counter-flow virtual impactor in clouds to capture ice crystal and cloud droplet residuals. In this presentation we present ice nucleating particle concentrations before, during and after an AR event from air, ground and ocean-based measurements. We also examine INP concentration variability in orographic clouds and in clear air at altitude along the Sierra Nevada range, in the marine boundary layer and through the Central Valley, and relate these INP measurements to other aerosol physical and chemical properties.

Hybrid solar cells based on dc magnetron sputtered films of n-ITO on APMOVPE grown p-InP

NASA Technical Reports Server (NTRS)

Coutts, T. J.; Li, X.; Wanlass, M. W.; Emery, K. A.; Gessert, T. A.

1988-01-01

Hybrid indium-tin-oxide (ITO)/InP solar cells are discussed. The cells are constructed by dc magnetron sputter deposition of ITO onto high-quality InP films grown by atmospheric pressure metal-organic vapor-phase epitaxy (APMOVPE). A record efficiency of 18.9 percent, measured under standard Solar Energy Research Institute reporting conditions, has been obtained. The p-InP surface is shown to be type converted, principally by the ITO, but with the extent of conversion being modified by the nature of the sputtering gas. The deposition process, in itself, is not responsible for the type conversion. Dark currents have been suppressed by more than three orders of magnitude by the addition of hydrogen to the sputtering gas during deposition of a thin (5 nm) interface layer. Without this layer, and using only the more usual argon/oxygen mixture, the devices had poorer efficiencies and were unstable. A discussion of associated quantum efficiencies and capacitance/voltage measurements is also presented from which it is concluded that further improvements in efficiency will result from better control over the type-conversion process.

VizieR Online Data Catalog: Solar wind 3D magnetohydrodynamic simulation (Chhiber+, 2017)

NASA Astrophysics Data System (ADS)

Chhiber, R.; Subedi, P.; Usmanov, A. V.; Matthaeus, W. H.; Ruffolo, D.; Goldstein, M. L.; Parashar, T. N.

2017-08-01

We use a three-dimensional magnetohydrodynamic simulation of the solar wind to calculate cosmic-ray diffusion coefficients throughout the inner heliosphere (2Rȯ-3au). The simulation resolves large-scale solar wind flow, which is coupled to small-scale fluctuations through a turbulence model. Simulation results specify background solar wind fields and turbulence parameters, which are used to compute diffusion coefficients and study their behavior in the inner heliosphere. The parallel mean free path (mfp) is evaluated using quasi-linear theory, while the perpendicular mfp is determined from nonlinear guiding center theory with the random ballistic interpretation. Several runs examine varying turbulent energy and different solar source dipole tilts. We find that for most of the inner heliosphere, the radial mfp is dominated by diffusion parallel to the mean magnetic field; the parallel mfp remains at least an order of magnitude larger than the perpendicular mfp, except in the heliospheric current sheet, where the perpendicular mfp may be a few times larger than the parallel mfp. In the ecliptic region, the perpendicular mfp may influence the radial mfp at heliocentric distances larger than 1.5au; our estimations of the parallel mfp in the ecliptic region at 1 au agree well with the Palmer "consensus" range of 0.08-0.3au. Solar activity increases perpendicular diffusion and reduces parallel diffusion. The parallel mfp mostly varies with rigidity (P) as P.33, and the perpendicular mfp is weakly dependent on P. The mfps are weakly influenced by the choice of long-wavelength power spectra. (2 data files).

MODIS Solar Diffuser On-orbit Performance

NASA Technical Reports Server (NTRS)

Xiong, Xiaoxiong; Chen, H.; Choi, T.; Sun, J.; Angal, A.

2008-01-01

MODIS is a key instrument for the NASA Earth Observing System (EOS), currently operated on both the Terra and Aqua missions. Each MODIS instrument has 20 reflective solar bands (RSBs) and 16 thermal emissive bands (TEBs). MODIS RSB on-orbit calibration is reflectance based using an on-board solar diffuser (SD). The SD bi-directional reflectance factors (BRFs) were characterized pre-launch using reference diffuser samples, which are traceable to NIST reflectance standards. The SD BRF on-orbit degradation (or change) is tracked by another onboard device, called the solar diffuser stability monitor (SDSM). The SDSM is operated during each scheduled SD calibration event, making alternate observations of direct sunlight and the diffusely reflected sunlight from the SD. The time series of the ratios of SDSM's SD view to its Sun view provide SD degradation information. This paper presents and compares the Terra and Aqua MODIS SD on-orbit performance. Results show that the SD on-orbit degradation depends on the amount of solar exposure of the SD plate. In addition, it is strongly wavelengthdependent, with a larger degradation rate at shorter wavelengths. For Terra MODIS, an SD door anomaly occurred in May 2003 that led to a decision to fix the door permanently at an "open" position. Since then, the SD degradation rate has significantly increased due to more frequent solar exposure. As expected, the SD on-orbit performance directly impacts the RSB calibration performance. The lessons learned from MODIS on-orbit calibration will provide useful insights into the development and operation of future SD calibration systems.

Precipitation and Release of Solar Energetic Particles from the Solar Coronal Magnetic Field

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Ming; Zhao, Lulu, E-mail: mzhang@fit.edu

Most solar energetic particles (SEPs) are produced in the corona. They propagate through complex coronal magnetic fields subject to scattering and diffusion across the averaged field lines by turbulence. We examine the behaviors of particle transport using a stochastic 3D focused transport simulation in a potential field source surface model of coronal magnetic field. The model is applied to an SEP event on 2010 February 7. We study three scenarios of particle injection at (i) the compact solar flare site, (ii) the coronal mass ejection (CME) shock, and (iii) the EUV wave near the surface. The majority of particles injectedmore » on open field lines are able to escape the corona. We found that none of our models can explain the observations of wide longitudinal SEP spread without perpendicular diffusion. If the perpendicular diffusion is about 10% of what is derived from the random walk of field lines at the rate of supergranular diffusion, particles injected at the compact solar flare site can spread to a wide range of longitude and latitude, very similar to the behavior of particles injected at a large CME shock. Stronger pitch-angle scattering results in a little more lateral spread by holding the particles in the corona for longer periods of time. Some injected particles eventually end up precipitating onto the solar surface. Even with a very small perpendicular diffusion, the pattern of the particle precipitation can be quite complicated depending on the detailed small-scale coronal magnetic field structures, which could be seen with future sensitive gamma-ray telescopes.« less

Precipitation and Release of Solar Energetic Particles from the Solar Coronal Magnetic Field

NASA Astrophysics Data System (ADS)

Zhang, Ming; Zhao, Lulu

2017-09-01

Most solar energetic particles (SEPs) are produced in the corona. They propagate through complex coronal magnetic fields subject to scattering and diffusion across the averaged field lines by turbulence. We examine the behaviors of particle transport using a stochastic 3D focused transport simulation in a potential field source surface model of coronal magnetic field. The model is applied to an SEP event on 2010 February 7. We study three scenarios of particle injection at (I) the compact solar flare site, (II) the coronal mass ejection (CME) shock, and (III) the EUV wave near the surface. The majority of particles injected on open field lines are able to escape the corona. We found that none of our models can explain the observations of wide longitudinal SEP spread without perpendicular diffusion. If the perpendicular diffusion is about 10% of what is derived from the random walk of field lines at the rate of supergranular diffusion, particles injected at the compact solar flare site can spread to a wide range of longitude and latitude, very similar to the behavior of particles injected at a large CME shock. Stronger pitch-angle scattering results in a little more lateral spread by holding the particles in the corona for longer periods of time. Some injected particles eventually end up precipitating onto the solar surface. Even with a very small perpendicular diffusion, the pattern of the particle precipitation can be quite complicated depending on the detailed small-scale coronal magnetic field structures, which could be seen with future sensitive gamma-ray telescopes.

Ice nucleating particles in the Saharan Air Layer

NASA Astrophysics Data System (ADS)

Boose, Yvonne; Sierau, Berko; García, M. Isabel; Rodríguez, Sergio; Alastuey, Andrés; Linke, Claudia; Schnaiter, Martin; Kupiszewski, Piotr; Kanji, Zamin A.; Lohmann, Ulrike

2016-07-01

This study aims at quantifying the ice nucleation properties of desert dust in the Saharan Air Layer (SAL), the warm, dry and dust-laden layer that expands from North Africa to the Americas. By measuring close to the dust's emission source, before aging processes during the transatlantic advection potentially modify the dust properties, the study fills a gap between in situ measurements of dust ice nucleating particles (INPs) far away from the Sahara and laboratory studies of ground-collected soil. Two months of online INP concentration measurements are presented, which were part of the two CALIMA campaigns at the Izaña observatory in Tenerife, Spain (2373 m a.s.l.), in the summers of 2013 and 2014. INP concentrations were measured in the deposition and condensation mode at temperatures between 233 and 253 K with the Portable Ice Nucleation Chamber (PINC). Additional aerosol information such as bulk chemical composition, concentration of fluorescent biological particles as well as the particle size distribution was used to investigate observed variations in the INP concentration. The concentration of INPs was found to range between 0.2 std L-1 in the deposition mode and up to 2500 std L-1 in the condensation mode at 240 K. It correlates well with the abundance of aluminum, iron, magnesium and manganese (R: 0.43-0.67) and less with that of calcium, sodium or carbonate. These observations are consistent with earlier results from laboratory studies which showed a higher ice nucleation efficiency of certain feldspar and clay minerals compared to other types of mineral dust. We find that an increase of ammonium sulfate, linked to anthropogenic emissions in upwind distant anthropogenic sources, mixed with the desert dust has a small positive effect on the condensation mode INP per dust mass ratio but no effect on the deposition mode INP. Furthermore, the relative abundance of biological particles was found to be significantly higher in INPs compared to the ambient aerosol. Overall, this suggests that atmospheric aging processes in the SAL can lead to an increase in ice nucleation ability of mineral dust from the Sahara. INP concentrations predicted with two common parameterization schemes, which were derived mostly from atmospheric measurements far away from the Sahara but influenced by Asian and Saharan dust, were found to be higher based on the aerosol load than we observed in the SAL, further suggesting aging effects of INPs in the SAL.

Formation and Diffusion of Metal Impurities in Perovskite Solar Cell Material CH 3NH 3PbI 3 : Implications on Solar Cell Degradation and Choice of Electrode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ming, Wenmei; Yang, Dongwen; Li, Tianshu

Solar cells based on methylammonium lead triiodide (MAPbI 3) have shown remarkable progress in recent years and have demonstrated efficiencies greater than 20%. However, the long-term stability of MAPbI 3-based solar cells has yet to be achieved. Besides the well-known chemical and thermal instabilities, significant native ion migration in lead halide perovskites leads to current–voltage hysteresis and photoinduced phase segregation. Recently, it is further revealed that, despite having excellent chemical stability, the Au electrode can cause serious solar cell degradation due to Au diffusion into MAPbI 3. In addition to Au, many other metals have been used as electrodes inmore » MAPbI 3 solar cells. However, how the external metal impurities introduced by electrodes affect the long-term stability of MAPbI 3 solar cells has rarely been studied. A comprehensive study of formation energetics and diffusion dynamics of a number of noble and transition metal impurities (Au, Ag, Cu, Cr, Mo, W, Co, Ni, Pd) in MAPbI 3 based on first-principles calculations is reported herein. The results uncover important general trends of impurity formation and diffusion in MAPbI 3 and provide useful guidance for identifying the optimal metal electrodes that do not introduce electrically active impurity defects in MAPbI 3 while having low resistivities and suitable work functions for carrier extraction.« less

Formation and Diffusion of Metal Impurities in Perovskite Solar Cell Material CH3NH3PbI3: Implications on Solar Cell Degradation and Choice of Electrode.

PubMed

Ming, Wenmei; Yang, Dongwen; Li, Tianshu; Zhang, Lijun; Du, Mao-Hua

2018-02-01

Solar cells based on methylammonium lead triiodide (MAPbI 3 ) have shown remarkable progress in recent years and have demonstrated efficiencies greater than 20%. However, the long-term stability of MAPbI 3 -based solar cells has yet to be achieved. Besides the well-known chemical and thermal instabilities, significant native ion migration in lead halide perovskites leads to current-voltage hysteresis and photoinduced phase segregation. Recently, it is further revealed that, despite having excellent chemical stability, the Au electrode can cause serious solar cell degradation due to Au diffusion into MAPbI 3 . In addition to Au, many other metals have been used as electrodes in MAPbI 3 solar cells. However, how the external metal impurities introduced by electrodes affect the long-term stability of MAPbI 3 solar cells has rarely been studied. A comprehensive study of formation energetics and diffusion dynamics of a number of noble and transition metal impurities (Au, Ag, Cu, Cr, Mo, W, Co, Ni, Pd) in MAPbI 3 based on first-principles calculations is reported herein. The results uncover important general trends of impurity formation and diffusion in MAPbI 3 and provide useful guidance for identifying the optimal metal electrodes that do not introduce electrically active impurity defects in MAPbI 3 while having low resistivities and suitable work functions for carrier extraction.

Formation and Diffusion of Metal Impurities in Perovskite Solar Cell Material CH 3NH 3PbI 3 : Implications on Solar Cell Degradation and Choice of Electrode

DOE PAGES

Ming, Wenmei; Yang, Dongwen; Li, Tianshu; ...

2017-12-27

Solar cells based on methylammonium lead triiodide (MAPbI 3) have shown remarkable progress in recent years and have demonstrated efficiencies greater than 20%. However, the long-term stability of MAPbI 3-based solar cells has yet to be achieved. Besides the well-known chemical and thermal instabilities, significant native ion migration in lead halide perovskites leads to current–voltage hysteresis and photoinduced phase segregation. Recently, it is further revealed that, despite having excellent chemical stability, the Au electrode can cause serious solar cell degradation due to Au diffusion into MAPbI 3. In addition to Au, many other metals have been used as electrodes inmore » MAPbI 3 solar cells. However, how the external metal impurities introduced by electrodes affect the long-term stability of MAPbI 3 solar cells has rarely been studied. A comprehensive study of formation energetics and diffusion dynamics of a number of noble and transition metal impurities (Au, Ag, Cu, Cr, Mo, W, Co, Ni, Pd) in MAPbI 3 based on first-principles calculations is reported herein. The results uncover important general trends of impurity formation and diffusion in MAPbI 3 and provide useful guidance for identifying the optimal metal electrodes that do not introduce electrically active impurity defects in MAPbI 3 while having low resistivities and suitable work functions for carrier extraction.« less

Formation and Diffusion of Metal Impurities in Perovskite Solar Cell Material CH3NH3PbI3: Implications on Solar Cell Degradation and Choice of Electrode

PubMed Central

Ming, Wenmei; Yang, Dongwen; Li, Tianshu

2017-01-01

Abstract Solar cells based on methylammonium lead triiodide (MAPbI3) have shown remarkable progress in recent years and have demonstrated efficiencies greater than 20%. However, the long‐term stability of MAPbI3‐based solar cells has yet to be achieved. Besides the well‐known chemical and thermal instabilities, significant native ion migration in lead halide perovskites leads to current–voltage hysteresis and photoinduced phase segregation. Recently, it is further revealed that, despite having excellent chemical stability, the Au electrode can cause serious solar cell degradation due to Au diffusion into MAPbI3. In addition to Au, many other metals have been used as electrodes in MAPbI3 solar cells. However, how the external metal impurities introduced by electrodes affect the long‐term stability of MAPbI3 solar cells has rarely been studied. A comprehensive study of formation energetics and diffusion dynamics of a number of noble and transition metal impurities (Au, Ag, Cu, Cr, Mo, W, Co, Ni, Pd) in MAPbI3 based on first‐principles calculations is reported herein. The results uncover important general trends of impurity formation and diffusion in MAPbI3 and provide useful guidance for identifying the optimal metal electrodes that do not introduce electrically active impurity defects in MAPbI3 while having low resistivities and suitable work functions for carrier extraction. PMID:29610728

The role of marine organic ice nuclei in a global climate model

NASA Astrophysics Data System (ADS)

Hummel, Matthias; Egill Kristjansson, Jon

2016-04-01

Ice particle concentrations are a key parameter for cold clouds, exerting a strong influence on cloud lifetime, precipitation release, and the cloud radiative effect. The availability of ice-nucleating particles (INPs) and the temperature range in which they become activated determine the rate of ice formation in clouds (Hoose und Möhler, 2012). Particles from marine sources may contribute to ice formation in clouds, as they are abundant in the atmosphere and some of them have been found to be ice-nucleating active, but the extent of their influence on clouds is not known (Wilson et al., 2015). Wilson et al. (2015) collected marine INPs from the sea surface microlayer and analyzed their ice nucleation efficiency with a cold stage. Even in cirrus clouds, marine INPs may play a role, as their ice nucleation surface site density as a function of RHice at -40° C has been shown to be larger than for mineral dusts (ATD, kaolinite, and feldspar). In this study, we test the influence of marine organic aerosols on clouds via immersion freezing with the earth system model NorESM2 (Version 2 of the Norwegian Earth System Model; Bentsen et al., 2013). The model is based on the Community Earth System Model (CESM1.2) and its atmospheric part (CAM5 Oslo) is based on the Community Atmosphere Model (CAM5.3). The parameterization of ice nucleation of marine INPs is expressed as an exponential function of temperature multiplied by the total organic content. Marine organic aerosols are part of the sea spray aerosol and are ejected during bubble bursting. INPs are associated with exudates or other macromolecules mainly from diatoms. Hence, their concentration is related to the sea salt aerosols in the model simulation. Our first results indicate that the high marine INP concentrations at around 850 hPa occur at high latitudes. These regions have low mineral dust concentrations, which might increase the influence of marine INP on clouds. However, they do not coincide with regions of high winds and therefore large sea spray aerosol concentrations, contrary to model simulations in Wilson et al. (2015) with the global aerosol process model (GLOMAP), but are shifted further polewards. Therefore, marine INP concentrations strongly depend on temperature and do not necessarily coincide with large sea spray concentrations. At mid-latitudes, marine INP concentrations rank below dust INP by at least one order of magnitude. Further, this presentation will describe the influence of marine INP on cloud properties and give an estimate of the cloud radiative effect of marine INP. Bentsen, M., I. Bethke, et al. (2013): The Norwegian Earth System Model, NorESM1-M - Part 1: Description and basic evaluation of the physical climate, Geosci. Model Dev. 6(3): 687-720. Hoose, C. und O. Möhler (2012): Heterogeneous ice nucleation on atmospheric aerosols: a review of results from laboratory experiments, Atmos. Chem. Phys. 12(20): 9817-9854. Wilson, T. W., L. A. Ladino, et al. (2015): A marine biogenic source of atmospheric ice-nucleating particles, Nature 525(7568): 234-238.

Single-particle characterization of ice-nucleating particles and ice particle residuals sampled by three different techniques

NASA Astrophysics Data System (ADS)

Worringen, A.; Kandler, K.; Benker, N.; Dirsch, T.; Mertes, S.; Schenk, L.; Kästner, U.; Frank, F.; Nillius, B.; Bundke, U.; Rose, D.; Curtius, J.; Kupiszewski, P.; Weingartner, E.; Vochezer, P.; Schneider, J.; Schmidt, S.; Weinbruch, S.; Ebert, M.

2015-04-01

In the present work, three different techniques to separate ice-nucleating particles (INPs) as well as ice particle residuals (IPRs) from non-ice-active particles are compared. The Ice Selective Inlet (ISI) and the Ice Counterflow Virtual Impactor (Ice-CVI) sample ice particles from mixed-phase clouds and allow after evaporation in the instrument for the analysis of the residuals. The Fast Ice Nucleus Chamber (FINCH) coupled with the Ice Nuclei Pumped Counterflow Virtual Impactor (IN-PCVI) provides ice-activating conditions to aerosol particles and extracts the activated particles for analysis. The instruments were run during a joint field campaign which took place in January and February 2013 at the High Alpine Research Station Jungfraujoch (Switzerland). INPs and IPRs were analyzed offline by scanning electron microscopy and energy-dispersive X-ray microanalysis to determine their size, chemical composition and mixing state. Online analysis of the size and chemical composition of INP activated in FINCH was performed by laser ablation mass spectrometry. With all three INP/IPR separation techniques high abundances (median 20-70%) of instrumental contamination artifacts were observed (ISI: Si-O spheres, probably calibration aerosol; Ice-CVI: Al-O particles; FINCH + IN-PCVI: steel particles). After removal of the instrumental contamination particles, silicates, Ca-rich particles, carbonaceous material and metal oxides were the major INP/IPR particle types obtained by all three techniques. In addition, considerable amounts (median abundance mostly a few percent) of soluble material (e.g., sea salt, sulfates) were observed. As these soluble particles are often not expected to act as INP/IPR, we consider them as potential measurement artifacts. Minor types of INP/IPR include soot and Pb-bearing particles. The Pb-bearing particles are mainly present as an internal mixture with other particle types. Most samples showed a maximum of the INP/IPR size distribution at 200-400 nm in geometric diameter. In a few cases, a second supermicron maximum was identified. Soot/carbonaceous material and metal oxides were present mainly in the sub-micrometer range. Silicates and Ca-rich particles were mainly found with diameters above 1 μm (using ISI and FINCH), in contrast to the Ice-CVI which also sampled many submicron particles of both groups. Due to changing meteorological conditions, the INP/IPR composition was highly variable if different samples were compared. Thus, the observed discrepancies between the different separation techniques may partly result from the non-parallel sampling. The differences of the particle group relative number abundance as well as the mixing state of INP/IPR clearly demonstrate the need of further studies to better understand the influence of the separation techniques on the INP/IPR chemical composition. Also, it must be concluded that the abundance of contamination artifacts in the separated INP and IPR is generally large and should be corrected for, emphasizing the need for the accompanying chemical measurements. Thus, further work is needed to allow for routine operation of the three separation techniques investigated.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Guo, X.; Florinski, V.

We present a new model that couples galactic cosmic-ray (GCR) propagation with magnetic turbulence transport and the MHD background evolution in the heliosphere. The model is applied to the problem of the formation of corotating interaction regions (CIRs) during the last solar minimum from the period between 2007 and 2009. The numerical model simultaneously calculates the large-scale supersonic solar wind properties and its small-scale turbulent content from 0.3 au to the termination shock. Cosmic rays are then transported through the background, and thus computed, with diffusion coefficients derived from the solar wind turbulent properties, using a stochastic Parker approach. Ourmore » results demonstrate that GCR variations depend on the ratio of diffusion coefficients in the fast and slow solar winds. Stream interfaces inside the CIRs always lead to depressions of the GCR intensity. On the other hand, heliospheric current sheet (HCS) crossings do not appreciably affect GCR intensities in the model, which is consistent with the two observations under quiet solar wind conditions. Therefore, variations in diffusion coefficients associated with CIR stream interfaces are more important for GCR propagation than the drift effects of the HCS during a negative solar minimum.« less

Measurement and modeling of solar irradiance components on horizontal and tilted planes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Padovan, Andrea; Col, Davide del

2010-12-15

In this work new measurements of global and diffuse solar irradiance on the horizontal plane and global irradiance on planes tilted at 20 and 30 oriented due South and at 45 and 65 oriented due East are used to discuss the modeling of solar radiation. Irradiance data are collected in Padova (45.4 N, 11.9 E, 12 m above sea level), Italy. Some diffuse fraction correlations have been selected to model the hourly diffuse radiation on the horizontal plane. The comparison with the present experimental data shows that their prediction accuracy strongly depends on the sky characteristics. The hourly irradiance measurementsmore » taken on the tilted planes are compared with the estimations given by one isotropic and three anisotropic transposition models. The use of an anisotropic model, based on a physical description of the diffuse radiation, provides a much better accuracy, especially when measurements of the diffuse irradiance on the horizontal plane are not available and thus transposition models have to be applied in combination with a diffuse fraction correlation. This is particularly significant for the planes oriented away from South. (author)« less

Resolving the Origin of the Diffuse Soft X-ray Background

NASA Technical Reports Server (NTRS)

Smith, Randall K.; Foster, Adam R.; Edgar, Ricard J.; Brickhouse, Nancy S.; Sanders, Wilton T.

2012-01-01

In January 1993, the Diffuse X-ray Spectrometer (DXS) measured the first high-resolution spectrum of the diffuse soft X-ray background between 44-80A. A line-dominated spectrum characteristic of a 10(exp 6)K collisionally ionized plasma' was expected but while the observed spectrum was clearly line-dominated, no model would fit. Then in 2003 the Cosmic Hot Interstellar Plasma Spectrometer (CHIPS) launched and observed the diffuse extreme-ultraviolet (EUV) spectrum between 90- 265A. Although many emission lines were again expected; only Fe IX at 171.1A was detected. The discovery of X-rays from comets led to the realization that heavy ions (Z=6-28) in the solar wind will emit soft X-rays as the ions interact via charge exchange with neutral atoms in the heliosphere and geocorona. Using a new model for solar wind charge exchange (SWCX) emission, we show that the diffuse soft X-ray background can be understood as a combination of emission from charge exchange onto the slow and fast solar wind together with a more distant and diffuse hot (10(exp 6)K) plasma.

InP Heterojunction Bipolar Transistor Amplifiers to 255 GHz

NASA Technical Reports Server (NTRS)

Radisic, Vesna; Sawdai, Donald; Scott, Dennis; Deal, William; Dang, Linh; Li, Danny; Cavus, Abdullah; To, Richard; Lai, Richard

2009-01-01

Two single-stage InP heterojunction bipolar transistor (HBT) amplifiers operate at 184 and 255 GHz, using Northrop Grumman Corporation s InP HBT MMIC (monolithic microwave integrated circuit) technology. At the time of this reporting, these are reported to be the highest HBT amplifiers ever created. The purpose of the amplifier design is to evaluate the technology capability for high-frequency designs and verify the model for future development work.

Band gap and band offset of (GaIn)(PSb) lattice matched to InP

NASA Astrophysics Data System (ADS)

Köhler, F.; Böhm, G.; Meyer, R.; Amann, M.-C.

2005-07-01

Metastable (GaxIn1-x)(PySb1-y) layers were grown on (001) InP substrates by gas source molecular beam epitaxy. Low-temperature photoluminescence spectroscopy was applied to these heterostructures and revealed spatially indirect band-to-band recombination of electrons localized in the InP with holes in the (GaxIn1-x)(PySb1-y). In addition, samples with layer thicknesses larger than 100nm showed direct PL across the band gap of (GaxIn1-x)(PySb1-y). Band-gap energies and band offset energies of (GaxIn1-x)(PySb1-y) relative to InP were derived from these PL data. A strong bowing parameter was observed.

Dielectric properties of semi-insulating Fe-doped InP in the terahertz spectral region.

PubMed

Alyabyeva, L N; Zhukova, E S; Belkin, M A; Gorshunov, B P

2017-08-04

We report the values and the spectral dependence of the real and imaginary parts of the dielectric permittivity of semi-insulating Fe-doped InP crystalline wafers in the 2-700 cm -1 (0.06-21 THz) spectral region at room temperature. The data shows a number of absorption bands that are assigned to one- and two-phonon and impurity-related absorption processes. Unlike the previous studies of undoped or low-doped InP material, our data unveil the dielectric properties of InP that are not screened by strong free-carrier absorption and will be useful for designing a wide variety of InP-based electronic and photonic devices operating in the terahertz spectral range.

Preliminary Results on Design and Implementation of a Solar Radiation Monitoring System

PubMed Central

Balan, Mugur C.; Damian, Mihai; Jäntschi, Lorentz

2008-01-01

The paper presents a solar radiation monitoring system, using two scientific pyranometers and an on-line computer home-made data acquisition system. The first pyranometer measures the global solar radiation and the other one, which is shaded, measure the diffuse radiation. The values of total and diffuse solar radiation are continuously stored into a database on a server. Original software was created for data acquisition and interrogation of the created system. The server application acquires the data from pyranometers and stores it into a database with a baud rate of one record at 50 seconds. The client-server application queries the database and provides descriptive statistics. A web interface allow to any user to define the including criteria and to obtain the results. In terms of results, the system is able to provide direct, diffuse and total radiation intensities as time series. Our client-server application computes also derivate heats. The ability of the system to evaluate the local solar energy potential is highlighted. PMID:27879746

Selective emitter solar cell formation by NH3 plasma nitridation and single diffusion

NASA Astrophysics Data System (ADS)

Wu, Yung-Hsien; Chen, Lun-Lun; Wu, Jia-Rong; Wu, Min-Lin

2010-01-01

A new and simple process for fabricating a selective emitter solar cell has been proposed. Lightly and heavily doped emitters could be concurrently formed after a single POCl3 diffusion step through the selective formation of SiNx, which serves as the diffusion barrier and can be grown by NH3 plasma nitridation of the Si surface. The desired phosphorus depth profile for the lightly and heavily doped region verifies the eligibility of this process. From the electrical characterization, the selective emitter solar cell fabricated by this process manifests a higher absolute conversion efficiency than a conventional one by 0.5%. It is the enhanced response to the short wavelength light and the reduced surface recombination that causes the considerable improvement in conversion efficiency which is beneficial to further hold the competitive advantage for solar cell manufacturers. Most importantly, the proposed process can be fully integrated into the conventional solar cell process in a mass-production laboratory.

Processes for producing low cost, high efficiency silicon solar cells

DOEpatents

Rohatgi, Ajeet; Chen, Zhizhang; Doshi, Parag

1996-01-01

Processes which utilize rapid thermal processing (RTP) are provided for inexpensively producing high efficiency silicon solar cells. The RTP processes preserve minority carrier bulk lifetime .tau. and permit selective adjustment of the depth of the diffused regions, including emitter and back surface field (bsf), within the silicon substrate. Silicon solar cell efficiencies of 16.9% have been achieved. In a first RTP process, an RTP step is utilized to simultaneously diffuse phosphorus and aluminum into the front and back surfaces, respectively, of a silicon substrate. Moreover, an in situ controlled cooling procedure preserves the carrier bulk lifetime .tau. and permits selective adjustment of the depth of the diffused regions. In a second RTP process, both simultaneous diffusion of the phosphorus and aluminum as well as annealing of the front and back contacts are accomplished during the RTP step. In a third RTP process, the RTP step accomplishes simultaneous diffusion of the phosphorus and aluminum, annealing of the contacts, and annealing of a double-layer antireflection/passivation coating SiN/SiO.sub.x.

Laser processing of solar cells with anti-reflective coating

DOEpatents

Harley, Gabriel; Smith, David D.; Dennis, Tim; Waldhauer, Ann; Kim, Taeseok; Cousins, Peter John

2016-02-16

Contact holes of solar cells are formed by laser ablation to accommodate various solar cell designs. Use of a laser to form the contact holes is facilitated by replacing films formed on the diffusion regions with a film that has substantially uniform thickness. Contact holes may be formed to deep diffusion regions to increase the laser ablation process margins. The laser configuration may be tailored to form contact holes through dielectric films of varying thicknesses.

Photonic Devices Based on Surface and Composition-Engineered Infrared Colloidal Nanocrystals

DTIC Science & Technology

2012-01-27

NQD/P3HT solar cells , the need for submicron-phase-separated polymer-NQD blends is therefore expressed by the limiting exciton diffusion length ...P3HT:PbSe are very critical in designing the PM-HJ solar cells : The thickness of P3HT should approximate to the thickness of exciton diffuse length in... cells , luminescent solar concentrators, light emitting diodes, lasers, photonic crystals, CdSe, PbSe, Germanium Jian Xu Pennsylvania State University

Analysis and evalaution in the production process and equipment area of the low-cost solar array project. [including modifying gaseous diffusion and using ion implantation

NASA Technical Reports Server (NTRS)

Goldman, H.; Wolf, M.

1979-01-01

The manufacturing methods for photovoltaic solar energy utilization are assessed. Economic and technical data on the current front junction formation processes of gaseous diffusion and ion implantation are presented. Future proposals, including modifying gaseous diffusion and using ion implantation, to decrease the cost of junction formation are studied. Technology developments in current processes and an economic evaluation of the processes are included.

Solar Energy Evolution and Diffusion Studies Webinars | Solar Research |

Science.gov Websites

video Download the transcript Agent-based Models of How Segregation and Peer Effects Influence Solar PV to estimate the relative influence of peer effects, cognitive factors, and economic factors in solar

Flat-plate solar array project process development area: Process research of non-CZ silicon material

NASA Technical Reports Server (NTRS)

Campbell, R. B.

1986-01-01

Several different techniques to simultaneously diffuse the front and back junctions in dendritic web silicon were investigated. A successful simultaneous diffusion reduces the cost of the solar cell by reducing the number of processing steps, the amount of capital equipment, and the labor cost. The three techniques studied were: (1) simultaneous diffusion at standard temperatures and times using a tube type diffusion furnace or a belt furnace; (2) diffusion using excimer laser drive-in; and (3) simultaneous diffusion at high temperature and short times using a pulse of high intensity light as the heat source. The use of an excimer laser and high temperature short time diffusion experiment were both more successful than the diffusion at standard temperature and times. The three techniques are described in detail and a cost analysis of the more successful techniques is provided.

Single-particle characterization of ice-nucleating particles and ice particle residuals sampled by three different techniques

NASA Astrophysics Data System (ADS)

Worringen, A.; Kandler, K.; Benker, N.; Dirsch, T.; Weinbruch, S.; Mertes, S.; Schenk, L.; Kästner, U.; Frank, F.; Nillius, B.; Bundke, U.; Rose, D.; Curtius, J.; Kupiszewski, P.; Weingartner, E.; Schneider, J.; Schmidt, S.; Ebert, M.

2014-09-01

In the present work, three different techniques are used to separate ice-nucleating particles (INP) and ice particle residuals (IPR) from non-ice-active particles: the Ice Selective Inlet (ISI) and the Ice Counterflow Virtual Impactor (Ice-CVI), which sample ice particles from mixed phase clouds and allow for the analysis of the residuals, as well as the combination of the Fast Ice Nucleus Chamber (FINCH) and the Ice Nuclei Pumped Virtual Impactor (IN-PCVI), which provides ice-activating conditions to aerosol particles and extracts the activated ones for analysis. The collected particles were analyzed by scanning electron microscopy and energy-dispersive X-ray microanalysis to determine their size, chemical composition and mixing state. Samples were taken during January/February 2013 at the High Alpine Research Station Jungfraujoch. All INP/IPR-separating techniques had considerable abundances (median 20-70%) of contamination artifacts (ISI: Si-O spheres, probably calibration aerosol; Ice-CVI: Al-O particles; FINCH + IN-PCVI: steel particles). Also, potential measurement artifacts (soluble material) occurred (median abundance < 20%). After removal of the contamination particles, silicates and Ca-rich particles, carbonaceous material and metal oxides were the major INP/IPR particle types separated by all three techniques. Minor types include soot and Pb-bearing particles. Sea-salt and sulfates were identified by all three methods as INP/IPR. Lead was identified in less than 10% of the INP/IPR. It was mainly present as an internal mixture with other particle types, but also external lead-rich particles were found. Most samples showed a maximum of the INP/IPR size distribution at 400 nm geometric diameter. In a few cases, a second super-micron maximum was identified. Soot/carbonaceous material and metal oxides were present mainly in the submicron range. ISI and FINCH yielded silicates and Ca-rich particles mainly with diameters above 1 μm, while the Ice-CVI also sampled many submicron particles. Probably owing to the different meteorological conditions, the INP/IPR composition was highly variable on a sample to sample basis. Thus, some part of the discrepancies between the different techniques may result from the (unavoidable) non-parallel sampling. The observed differences of the particles group abundances as well as the mixing state of INP/IPR point to the need of further studies to better understand the influence of the separating techniques on the INP/IPR chemical composition.

CFS Products

Science.gov Websites

vddsf.xx.YYYYMMDDHH.daily.grb2 Not Available CFS Near IR Diffuse Downward Solar Flux Filename Inventory Available CFS Near IR Diffuse Downward Solar Flux Filename Inventory nddsf.xx.YYYYMMDDHH.daily.grb2 6hrly Image of NCEP logo For questions related to this website, send mail to Web Manager. NCEP/NCO Production

InP on SOI devices for optical communication and optical network on chip

NASA Astrophysics Data System (ADS)

Fedeli, J.-M.; Ben Bakir, B.; Olivier, N.; Grosse, Ph.; Grenouillet, L.; Augendre, E.; Phillippe, P.; Gilbert, K.; Bordel, D.; Harduin, J.

2011-01-01

For about ten years, we have been developing InP on Si devices under different projects focusing first on μlasers then on semicompact lasers. For aiming the integration on a CMOS circuit and for thermal issue, we relied on SiO2 direct bonding of InP unpatterned materials. After the chemical removal of the InP substrate, the heterostructures lie on top of silicon waveguides of an SOI wafer with a separation of about 100nm. Different lasers or photodetectors have been achieved for off-chip optical communication and for intra-chip optical communication within an optical network. For high performance computing with high speed communication between cores, we developed InP microdisk lasers that are coupled to silicon waveguide and produced 100μW of optical power and that can be directly modulated up to 5G at different wavelengths. The optical network is based on wavelength selective circuits with ring resonators. InGaAs photodetectors are evanescently coupled to the silicon waveguide with an efficiency of 0.8A/W. The fabrication has been demonstrated at 200mm wafer scale in a microelectronics clean room for CMOS compatibility. For off-chip communication, silicon on InP evanescent laser have been realized with an innovative design where the cavity is defined in silicon and the gain localized in the QW of bonded InP hererostructure. The investigated devices operate at continuous wave regime with room temperature threshold current below 100 mA, the side mode suppression ratio is as high as 20dB, and the fibercoupled output power is {7mW. Direct modulation can be achieved with already 6G operation.

Ice nucleating particles over the Eastern Mediterranean measured by unmanned aircraft systems

NASA Astrophysics Data System (ADS)

Schrod, Jann; Weber, Daniel; Drücke, Jaqueline; Keleshis, Christos; Pikridas, Michael; Ebert, Martin; Cvetković, Bojan; Nickovic, Slobodan; Marinou, Eleni; Baars, Holger; Ansmann, Albert; Vrekoussis, Mihalis; Mihalopoulos, Nikos; Sciare, Jean; Curtius, Joachim; Bingemer, Heinz G.

2017-04-01

During an intensive field campaign on aerosol, clouds, and ice nucleation in the Eastern Mediterranean in April 2016, we measured the abundance of ice nucleating particles (INPs) in the lower troposphere from unmanned aircraft systems (UASs). Aerosol samples were collected by miniaturized electrostatic precipitators onboard the UASs at altitudes up to 2.5 km. The number of INPs in these samples, which are active in the deposition and condensation modes at temperatures from -20 to -30 °C, were analyzed immediately after collection on site using the ice nucleus counter FRIDGE (FRankfurt Ice nucleation Deposition freezinG Experiment). During the 1-month campaign, we encountered a series of Saharan dust plumes that traveled at several kilometers' altitude. Here we present INP data from 42 individual flights, together with aerosol number concentrations, observations of lidar backscattering, dust concentrations derived by the dust transport model DREAM (Dust Regional Atmospheric Model), and results from scanning electron microscopy. The effect of the dust plumes is reflected by the coincidence of INPs with the particulate matter (PM), the lidar signal, and the predicted dust mass of the model. This suggests that mineral dust or a constituent related to dust was a major contributor to the ice nucleating properties of the aerosol. Peak concentrations of above 100 INPs std L-1 were measured at -30 °C. The INP concentration in elevated plumes was on average a factor of 10 higher than at ground level. Since desert dust is transported for long distances over wide areas of the globe predominantly at several kilometers' altitude, we conclude that INP measurements at ground level may be of limited significance for the situation at the level of cloud formation.

Macrophage Solubilization and Cytotoxicity of Indium-Containing Particles as in vitro Correlates to Pulmonary Toxicity in vivo

PubMed Central

Gwinn, William M.; Qu, Wei; Bousquet, Ronald W.; Price, Herman; Shines, Cassandra J.; Taylor, Genie J.; Waalkes, Michael P.; Morgan, Daniel L.

2015-01-01

Macrophage-solubilized indium-containing particles (ICPs) were previously shown in vitro to be cytotoxic. In this study, we compared macrophage solubilization and cytotoxicity of indium phosphide (InP) and indium-tin oxide (ITO) with similar particle diameters (∼1.5 µm) and then determined if relative differences in these in vitro parameters correlated with pulmonary toxicity in vivo. RAW 264.7 macrophages were treated with InP or ITO particles and cytotoxicity was assayed at 24 h. Ionic indium was measured in 24 h culture supernatants. Macrophage cytotoxicity and particle solubilization in vitro were much greater for InP compared with ITO. To correlate changes in vivo, B6C3F1 mice were treated with InP or ITO by oropharyngeal aspiration. On Days 14 and 28, bronchoalveolar lavage (BAL) and pleural lavage (PL) fluids were collected and assayed for total leukocytes. Cell differentials, lactate dehydrogenase activity, and protein levels were also measured in BAL. All lavage parameters were greatly increased in mice treated with InP compared with ITO. These data suggest that macrophage solubilization and cytotoxicity of some ICPs in vitro are capable of predicting pulmonary toxicity in vivo. In addition, these differences in toxicity were observed despite the two particulate compounds containing similar amounts of indium suggesting that solubilization, not total indium content, better reflects the toxic potential of some ICPs. Soluble InCl3 was shown to be more cytotoxic than InP to macrophages and lung epithelial cells in vitro further suggesting that ionic indium is the primary cytotoxic component of InP. PMID:25527823

An Investigation into III-V Compounds to Reach 20% Efficiency with Minimum Cell Thickness in Ultrathin-Film Solar Cells

NASA Astrophysics Data System (ADS)

Haque, K. A. S. M. Ehteshamul; Galib, Md. Mehedi Hassan

2013-10-01

III-V single-junction solar cells have already achieved very high efficiency levels. However, their use in terrestrial applications is limited by the high fabrication cost. High-efficiency, ultrathin-film solar cells can effectively solve this problem, as their material requirement is minimum. This work presents a comparison among several III-V compounds that have high optical absorption capability as well as optimum bandgap (around 1.4 eV) for use as solar cell absorbers. The aim is to observe and compare the ability of these materials to reach a target efficiency level of 20% with minimum possible cell thickness. The solar cell considered has an n-type ZnSe window layer, an n-type Al0.1Ga0.9As emitter layer, and a p-type Ga0.5In0.5P back surface field (BSF) layer. Ge is used as the substrate. In the initial design, a p-type InP base was sandwiched between the emitter and the BSF layer, and the design parameters for the device were optimized by analyzing the simulation outcomes with ADEPT/F, a one-dimensional (1D) simulation tool. Then, the minimum cell thickness that achieves 20% efficiency was determined by observing the efficiency variation with cell thickness. Afterwards, the base material was changed to a few other selected III-V compounds, and for each case, the minimum cell thickness was determined in a similar manner. Finally, these cell thickness values were compared and analyzed to identify more effective base layer materials for III-V single-junction solar cells.

Self-Catalyzed Growth and Characterization of In(As)P Nanowires on InP(111)B Using Metal-Organic Chemical Vapor Deposition.

PubMed

Park, Jeung Hun; Pozuelo, Marta; Setiawan, Bunga P D; Chung, Choong-Heui

2016-12-01

We report the growth of vertical <111>-oriented InAs x P1-x (0.11 ≤ x ≤ 0.27) nanowires via metal-organic chemical vapor deposition in the presence of indium droplets as catalysts on InP(111)B substrates at 375 °C. Trimethylindium, tertiarybutylphosphine, and tertiarybutylarsine are used as the precursors, corresponding to P/In and As/In molar ratios of 29 and 0.01, respectively. The as-grown nanowire growth morphologies, crystallinity, composition, and optical characteristics are determined using a combination of scanning and transmission electron microscopies, electron diffraction, and X-ray photoelectron, energy dispersive X-ray, and Raman spectroscopies. We find that the InAs x P1-x nanowires are tapered with narrow tops, wider bases, and In-rich In-As alloy tips, characteristic of vapor-liquid-solid process. The wires exhibit a mixture of zinc blende and wurtzite crystal structures and a high density of structural defects such as stacking faults and twins. Our results suggest that the incorporation of As into InP wires decreases with increasing substrate temperature. The Raman spectra obtained from the In(As)P nanowires reveal a red-shift and lower intensity of longitudinal optical mode relative to both InP nanowires and InP(111)B bulk, due to the incorporation of As into the InP matrix.

Nano-composites for water remediation: a review.

PubMed

Tesh, Sarah J; Scott, Thomas B

2014-09-17

As global populations continue to increase, the pressure on water supplies will inevitably intensify. Consequently the international need for more efficient and cost effective water remediation technologies will also rise. The introduction of nano-technology into the industry may represent a significant advancement and zero-valent iron nano-particles (INPs) have been thoroughly studied for potential remediation applications. However, the application of water dispersed INP suspensions is limited and somewhat contentious on the grounds of safety, whilst INP reaction mechanisms, transport properties and ecotoxicity are areas still under investigation. Theoretically, the development of nano-composites containing INPs to overcome these issues provides the logical next step for developing nano-materials that are better suited to wide application across the water industry. This review provides an overview of the range of static, bulk nano-composites containing INPs being developed, whilst highlighting the limitations of individual solutions, overall classes of technology, and lack of comparative testing for nano-composites. The review discusses what further developments are needed to optimize nano-composite water remediation systems to subsequently achieve commercial maturity. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Fabrication and magnetic properties of granular Co/porous InP nanocomposite materials

PubMed Central

2011-01-01

A novel Co/InP magnetic semiconductor nanocomposite was fabricated by electrodeposition magnetic Co nanoparticles into n-type porous InP templates in ethanol solution of cobalt chloride. The content or particle size of Co particles embedded in porous InP increased with increasing deposition time. Co particles had uniform distribution over pore sidewall surface of InP template, which was different from that of ceramic template and may open up new branch of fabrication of nanocomposites. The magnetism of such Co/InP nanocomposites can be gradually tuned from diamagnetism to ferromagnetism by increasing the deposition time of Co. Magnetic anisotropy of this Co/InP nanocomposite with magnetization easy axis along the axis of InP square channel was well realized by the competition between shape anisotropy and magnetocrystalline anisotropy. Such Co/InP nanocomposites with adjustable magnetism may have potential applications in future in the field of spin electronics. PACS: 61.46. +w · 72.80.Tm · 81.05.Rm · 75.75. +a · 82.45.Aa PMID:21711809

InP and InAs nanowires hetero- and homojunctions: energetic stability and electronic properties.

PubMed

Dionízio Moreira, M; Venezuela, P; Miwa, R H

2010-07-16

We performed an ab initio total energy investigation, within the density functional theory, of the energetic stability and the electronic properties of hydrogenated InAs/InP nanowire (NW) heterojunctions, as well as InAs and InP homojunctions composed of different structural arrangements, zinc-blend (zb) and wurtzite (w). For InAs/InP NW heterojunctions our results indicate that w and zb NW heterojunctions are quite similar, energetically, for thin NWs. We also examined the robustness of the abrupt interface through an atomic <--> swap at the InAs/InP interface. Our results support the formation of abrupt (non-abrupt) interfaces in w (zb) InAs/InP heterojunctions. Concerning InAs/InP NW-SLs, our results indicate a type-I band alignment, with the energy barrier at the InP layers, in accordance with experimental works. For InAs or InP zb/w homojunctions, we also found a type-I band alignment for thin NWs, however, on increasing the NW diameter both InAs and InP homojunctions exhibit a type-II band alignment.

Fabrication and magnetic properties of granular Co/porous InP nanocomposite materials.

PubMed

Zhou, Tao; Cheng, Dandan; Zheng, Maojun; Ma, Li; Shen, Wenzhong

2011-03-31

A novel Co/InP magnetic semiconductor nanocomposite was fabricated by electrodeposition magnetic Co nanoparticles into n-type porous InP templates in ethanol solution of cobalt chloride. The content or particle size of Co particles embedded in porous InP increased with increasing deposition time. Co particles had uniform distribution over pore sidewall surface of InP template, which was different from that of ceramic template and may open up new branch of fabrication of nanocomposites. The magnetism of such Co/InP nanocomposites can be gradually tuned from diamagnetism to ferromagnetism by increasing the deposition time of Co. Magnetic anisotropy of this Co/InP nanocomposite with magnetization easy axis along the axis of InP square channel was well realized by the competition between shape anisotropy and magnetocrystalline anisotropy. Such Co/InP nanocomposites with adjustable magnetism may have potential applications in future in the field of spin electronics.PACS: 61.46. +w · 72.80.Tm · 81.05.Rm · 75.75. +a · 82.45.Aa.

High resolution electrolyte for thinning InP by anodic dissolution and its applications to EC-V profiling, defect revealing and surface passivation

NASA Technical Reports Server (NTRS)

Faur, Maria; Faur, Mircea; Weinberg, Irving; Goradia, Manju; Vargas, Carlos

1991-01-01

An extensive experimental study was conducted using various electrolytes in an effort to find an appropriate electrolyte for anodic dissolution of InP. From the analysis of electrochemical characteristics in the dark and under different illumination levels, x ray photoelectron spectroscopy and SEM/Nomarski inspection of the surfaces, it was determined that the anodic dissolution of InP front surface layers by FAP electrolyte is a very good choice for rendering smooth surfaces, free of oxides and contaminants and with good electrical characteristics. The FAP electrolyte, based on HF, CH3COOH, and H2O2 appears to be inherently superior to previously reported electrolytes for performing accurate EC-V profiling of InP at current densities of up to 0.3 mA/sq cm. It can also be used for accurate electrochemical revealing of either precipitates or dislocation density with application to EPD mapping as a function of depth, and for defect revealing of multilayer InP structures at any depth and/or at the interfaces.

Laser process and corresponding structures for fabrication of solar cells with shunt prevention dielectric

DOE Office of Scientific and Technical Information (OSTI.GOV)

Harley, Gabriel; Smith, David D.; Dennis, Tim

Contact holes of solar cells are formed by laser ablation to accommodate various solar cell designs. Use of a laser to form the contact holes is facilitated by replacing films formed on the diffusion regions with a film that has substantially uniform thickness. Contact holes may be formed to deep diffusion regions to increase the laser ablation process margins. The laser configuration may be tailored to form contact holes through dielectric films of varying thicknesses.

Application of the MOS-C-V technique to determine impurity concentrations and surface parameters on the diffused face of silicon solar cells

NASA Technical Reports Server (NTRS)

Weinberg, I.

1975-01-01

The feasibility of using the MOS C-V technique to obtain information regarding impurity and surface state concentrations on the diffused face of silicon solar cells with Ta2O5 coatings is studied. Results indicate that the MOS C-V technique yields useful information concerning surface parameters which contribute to the high, efficiency limiting, surface recombination velocities on the n+ surface of silicon solar cells.

Process and structures for fabrication of solar cells with laser ablation steps to form contact holes

DOEpatents

Harley, Gabriel; Smith, David D; Dennis, Tim; Waldhauer, Ann; Kim, Taeseok; Cousins, Peter John

2013-11-19

Contact holes of solar cells are formed by laser ablation to accomodate various solar cell designs. Use of a laser to form the contact holes is facilitated by replacing films formed on the diffusion regions with a film that has substantially uniform thickness. Contact holes may be formed to deep diffusion regions to increase the laser ablation process margins. The laser configuration may be tailored to form contact holes through dielectric films of varying thickness.

Low cost solar array project cell and module formation research area: Process research of non-CZ silicon material

NASA Technical Reports Server (NTRS)

1981-01-01

Liquid diffusion masks and liquid applied dopants to replace the CVD Silox masking and gaseous diffusion operations specified for forming junctions in the Westinghouse baseline process sequence for producing solar cells from dendritic web silicon were investigated. The baseline diffusion masking and drive processes were compared with those involving direct liquid applications to the dendritic web silicon strips. Attempts were made to control the number of variables by subjecting dendritic web strips cut from a single web crystal to both types of operations. Data generated reinforced earlier conclusions that efficiency levels at least as high as those achieved with the baseline back junction formation process can be achieved using liquid diffusion masks and liquid dopants. The deliveries of dendritic web sheet material and solar cells specified by the current contract were made as scheduled.

Diffused junction p(+)-n solar cells in bulk GaAs. II - Device characterization and modelling

NASA Technical Reports Server (NTRS)

Keeney, R.; Sundaram, L. M. G.; Rode, H.; Bhat, I.; Ghandhi, S. K.; Borrego, J. M.

1984-01-01

The photovoltaic characteristics of p(+)-n junction solar cells fabricated on bulk GaAs by an open tube diffusion technique are presented in detail. Quantum efficiency measurements were analyzed and compared to computer simulations of the cell structure in order to determine material parameters such as diffusion length, surface recombination velocity and junction depth. From the results obtained it is projected that proper optimization of the cell parameters can increase the efficiency of the cells to close to 20 percent.

A method for optimizing the cosine response of solar UV diffusers

NASA Astrophysics Data System (ADS)

Pulli, Tomi; Kärhä, Petri; Ikonen, Erkki

2013-07-01

Instruments measuring global solar ultraviolet (UV) irradiance at the surface of the Earth need to collect radiation from the entire hemisphere. Entrance optics with angular response as close as possible to the ideal cosine response are necessary to perform these measurements accurately. Typically, the cosine response is obtained using a transmitting diffuser. We have developed an efficient method based on a Monte Carlo algorithm to simulate radiation transport in the solar UV diffuser assembly. The algorithm takes into account propagation, absorption, and scattering of the radiation inside the diffuser material. The effects of the inner sidewalls of the diffuser housing, the shadow ring, and the protective weather dome are also accounted for. The software implementation of the algorithm is highly optimized: a simulation of 109 photons takes approximately 10 to 15 min to complete on a typical high-end PC. The results of the simulations agree well with the measured angular responses, indicating that the algorithm can be used to guide the diffuser design process. Cost savings can be obtained when simulations are carried out before diffuser fabrication as compared to a purely trial-and-error-based diffuser optimization. The algorithm was used to optimize two types of detectors, one with a planar diffuser and the other with a spherically shaped diffuser. The integrated cosine errors—which indicate the relative measurement error caused by the nonideal angular response under isotropic sky radiance—of these two detectors were calculated to be f2=1.4% and 0.66%, respectively.

Low temperature InP /Si wafer bonding using boride treated surface

NASA Astrophysics Data System (ADS)

Huang, Hui; Ren, Xiaomin; Wang, Wenjuan; Song, Hailan; Wang, Qi; Cai, Shiwei; Huang, Yongqing

2007-04-01

An approach for InP /Si wafer bonding based on boride-solution treatment was presented. The bonding energy is higher than the InP fracture energy by annealing at 280°C. An In0.53Ga0.47As/InP multiple-quantum-well (MQW) structure grown on InP was transferred onto Si substrate via the bonding process. X-ray diffraction and photoluminescence reveal that crystal quality of the bonded MQW was preserved. A thin B2O3-POx-SiO2 oxide layer of about 28nm thick at the bonding interface was detected. X-ray photoelectron spectroscopy and Raman analyses indicate that the formation of oxygen bridging bonds by boride treatment is responsible for the strong fusion obtained at such low temperature.

Determination of the spin orbit coupling and crystal field splitting in wurtzite InP by polarization resolved photoluminescence

NASA Astrophysics Data System (ADS)

Chauvin, Nicolas; Mavel, Amaury; Jaffal, Ali; Patriarche, Gilles; Gendry, Michel

2018-02-01

Excitation photoluminescence spectroscopy is usually used to extract the crystal field splitting (ΔCR) and spin orbit coupling (ΔSO) parameters of wurtzite (Wz) InP nanowires (NWs). However, the equations expressing the valence band splitting are symmetric with respect to these two parameters, and a choice ΔCR > ΔSO or ΔCR < ΔSO has to be taken into account in order to assign the numerical values. To solve this issue, polarization resolved micro-photoluminescence was performed on vertically aligned and untapered Wz InP NWs grown on silicon. The experimental results combined with a theoretical model and finite difference time domain calculations allow us to conclude that ΔCR > ΔSO in Wz InP.

Time-resolved photoluminescence measurements of InP/ZnS quantum dots

NASA Astrophysics Data System (ADS)

Thi Thuy, Pham; Thi Dieu Thuy, Ung; Chi, Tran Thi Kim; Phuong, Le Quang; Liem, Nguyen Quang; Li, Liang; Reiss, Peter

2009-09-01

This paper reports the results on the time-resolved photoluminescence study of InP/ZnS core/shell quantum dots. The ZnS shell played a decisive role to passivate imperfections on the surface of InP quantum dots, consequently giving rise to a strong enhancement of the photoluminescence from the InP core. Under appropriate excitation conditions, not only the emission from the InP core but also that from the ZnS shell was observed. The emission peak in InP core quantum dots varied as a function of quantum dots size, ranging in the 600 - 700 nm region; while the ZnS shell showed emission in the blue region around 470 nm, which is interpreted as resulting from defects in ZnS.

Analysis of Al diffusion processes in TiN barrier layers for the application in silicon solar cell metallization

NASA Astrophysics Data System (ADS)

Kumm, J.; Samadi, H.; Chacko, R. V.; Hartmann, P.; Wolf, A.

2016-07-01

An evaporated Al layer is known as an excellent rear metallization for highly efficient solar cells, but suffers from incompatibility with a common solder process. To enable solar cell-interconnection and module integration, in this work the Al layer is complemented with a solder stack of TiN/Ti/Ag or TiN/NiV/Ag, in which the TiN layer acts as an Al diffusion barrier. X-ray photoelectron spectroscopy measurements prove that diffusion of Al through the stack and the formation of an Al2O3 layer on the stack's surface are responsible for a loss of solderability after a strong post-metallization anneal, which is often mandatory to improve contact resistance and passivation quality. An optimization of the reactive TiN sputter process results in a densification of the TiN layer, which improves its barrier quality against Al diffusion. However, measurements with X-ray diffraction and scanning electron microscopy show that small grains with vertical grain boundaries persist, which still offer fast diffusion paths. Therefore, the concept of stuffing is introduced. By incorporating oxygen into the grain boundaries of the sputtered TiN layer, Al diffusion is strongly reduced as confirmed by secondary ion mass spectroscopy profiles. A quantitative analysis reveals a one order of magnitude lower Al diffusion coefficient for stuffed TiN layers. This metallization system maintains its solderability even after strong post-metallization annealing at 425 °C for 15 min. This paper thus presents an industrially feasible, conventionally solderable, and long-term stable metallization scheme for highly efficient silicon solar cells.

The solar ultraviolet B radiation protection provided by shading devices with regard to its diffuse component.

PubMed

Kudish, Avraham I; Harari, Marco; Evseev, Efim G

2011-10-01

The composition of the incident solar global ultraviolet B (UVB) radiation with regard to its beam and diffuse radiation fractions is highly relevant with regard to outdoor sun protection. This is especially true with respect to sun protection during leisure-time outdoor sun exposure at the shore and pools, where people tend to escape the sun under shade trees or different types of shading devices, e.g., umbrellas, overhangs, etc., believing they offer protection from the erythemal solar radiation. The degree of sun protection offered by such devices is directly related to the composition of the solar global UVB radiation, i.e., its beam and diffuse fractions. The composition of the incident solar global UVB radiation can be determined by measuring the global UVB (using Solar Light Co. Inc., Model 501A UV-Biometer) and either of its components. The beam component of the UVB radiation was determined by measuring the normal incidence beam radiation using a prototype, tracking instrument consisting of a Solar Light Co. Inc. Model 501A UV-Biometer mounted on an Eppley Solar Tracker Model St-1. The horizontal beam component of the global UVB radiation was calculated from the measured normal incidence using a simple geometric correlation and the diffuse component is determined as the difference between global and horizontal beam radiations. Horizontal and vertical surfaces positioned under a horizontal overhang/sunshade or an umbrella are not fully protected from exposure to solar global UVB radiation. They can receive a significant fraction of the UVB radiation, depending on their location beneath the shading device, the umbrella radius and the albedo (reflectance) of the surrounding ground surface in the case of a vertical surface. Shading devices such as an umbrella or horizontal overhang/shade provide relief from the solar global radiation and do block the solar global UVB radiation to some extent; nevertheless, a significant fraction of the solar global UVB radiation does penetrate this supposedly 'protective or comfort zone'. As a result, it is imperative to either apply sunscreen or cover up the exposed body surfaces even when under such shading devices. © 2011 John Wiley & Sons A/S.

DOE Office of Scientific and Technical Information (OSTI.GOV)

DeMott, PJ; Suski, KJ; Hill, TCJ

The first ever ice nucleating particle (INP) measurements to be collected at the Southern Great Plains site were made during a period from late April to June 2014, as a trial for possible longer-term measurements at the site. These measurements will also be used to lay the foundation for understanding and parameterizing (for cloud resolving modeling) the sources of these climatically important aerosols as well as to augment the existing database containing this knowledge. Siting the measurements during the spring was intended to capture INP sources in or to this region from plant, soil, dust transported over long distances, biomassmore » burning, and pollution aerosols at a time when they may influence warm-season convective clouds and precipitation. Data have been archived of real-time measurements of INP number concentrations as a function of processing conditions (temperature and relative humidity) during 18 days of sampling that spanned two distinctly different weather situations: a warm, dry and windy period with regional dust and biomass burning influences in early May, and a cooler period of frequent precipitation during early June. Precipitation delayed winter wheat harvesting, preventing intended sampling during that perturbation on atmospheric aerosols. INP concentrations were highest and most variable at all temperatures in the dry period, where we attribute the INP activity primarily to soil dust emissions. Additional offline INP analyses are underway to extend the characterization of INP to cover the entire mixed phase cloud regime from -5°C to -35°C during the full study. Initial comparisons between methods on four days show good agreement and excellent future promise. The additional offline immersion freezing data will be archived as soon as completed under separate funding. Analyses of additional specialized studies for specific attribution of INP to biological and smoke sources are continuing via the National Science Foundation and National Aeronautics and Space Administration funding that helped support instrumentation used for the measurements described herein. Aerosol Observing System aerosol data will be vital to the interpretation and parameterization of results as part of analyses for publications in preparation.« less

Measurements of ice nucleating particle concentrations at 242 K in the free troposphere

NASA Astrophysics Data System (ADS)

Lacher, L.; Lohmann, U.; Boose, Y.; Zipori, A.; Herrmann, E.; Bukowiecki, N.; Steinbacher, M.; Gute, E.; Kanji, Z. A.

2017-12-01

Clouds containing ice play an important role in the Earth's system, but some fundamental knowledge on their formation and further development is still missing. The phase change from vapor or liquid to ice in the atmosphere can occur heterogeneously in the presence of ice nucleating particles (INPs) at temperatures warmer, and supersaturations lower than required for homogeneous freezing. Only a small fraction of particles in an environment relevant for the occurrence of ice- and mixed-phase clouds are INPs, and their identification and quantification remains challenging. We measure INP concentrations with the ETH Horizontal Ice Nucleation Chamber (HINC) at the High Altitude Research Station Jungfraujoch (JFJ) during several field campaigns in different seasons and years. The measurements are performed at 242 K and above water saturation, representing ice- and mixed-phase clouds conditions. Due to its elevation of 3580 m a.s.l. the site encounters mostly free tropospheric conditions, and is influenced by boundary layer injections up to 80% of the time in summer. JFJ regularly encounters Saharan dust events and receives air masses of marine origin, which can both occur within the free troposphere. Our measurements show that INP concentrations in the free troposphere do not follow a seasonal cycle. They are remarkably constant, with concentrations from 0.5 - 8 L-1 (interquartile range), which compares well to measurements performed under the same conditions at another location within the free troposphere, the Izaña Atmospheric Research Station in Tenerife. At JFJ, correlations with parameters of physical properties of ambient particles, meteorology and air mass characteristics do not show a single best estimator to predict INP concentrations, emphasizing the complexity of ice nucleation in the free troposphere. Increases in INP concentrations of a temporary nature were observed in the free troposphere during Saharan dust events and marine air mass influence, which indicate the potential role of mineral dust and marine aerosol to the INP population. However, average free tropospheric INP concentrations are not sensitive to these transient high numbers suggesting their overall contribution may be minor for seasonal or annual trends.

Fabrication of multijunction high voltage concentrator solar cells by integrated circuit technology

NASA Technical Reports Server (NTRS)

Valco, G. J.; Kapoor, V. J.; Evans, J. C., Jr.; Chai, A.-T.

1981-01-01

Standard integrated circuit technology has been developed for the design and fabrication of planar multijunction (PMJ) solar cell chips. Each 1 cm x 1 cm solar chip consisted of six n(+)/p, back contacted, internally series interconnected unit cells. These high open circuit voltage solar cells were fabricated on 2 ohm-cm, p-type 75 microns thick, silicon substrates. A five photomask level process employing contact photolithography was used to pattern for boron diffusions, phorphorus diffusions, and contact metallization. Fabricated devices demonstrated an open circuit voltage of 3.6 volts and a short circuit current of 90 mA at 80 AMl suns. An equivalent circuit model of the planar multi-junction solar cell was developed.

Thin n-i-p silicon solar cell

NASA Technical Reports Server (NTRS)

Meulenberg, A., Jr.; Allison, J. F.; Arndt, R. A.

1980-01-01

A space solar cell concept which combines high cell output with low diffusion length damage coefficients is presented for the purpose of reducing solar cell susceptibility to degradation from the radiation environment. High resistivity n-i-p silicon solar cells ranging from upward of 83 micron-cm were exposed to AM0 ultraviolet illumination. It is shown that high resistivity cells act as extrinsic devices under dark conditions and as intrinsic devices under AM0 illumination. Resistive losses in thin n-i-p cells are found to be comparable to those in low resistivity cells. Present voltage limitations appear to be due to generation and recombination in the diffused regions.

Solar System Connections to the Organic Material In the ISM

NASA Technical Reports Server (NTRS)

Pendleton, Yvonne J.

2003-01-01

The organic component of the interstellar medium (ISM) has relevance to the formation of the early solar nebula, since our solar system formed out of ISM material. Comparisons of near infrared spectra of the diffuse ISM dust with those of primitive solar system bodies (such as comets and meteorites) show a remarkable similarity, suggesting that perhaps some of the interstellar organic material made its way, unaltered, into our solar system. Tracing the interstellar organic material is necessary to understand how these materials may be important links in the development of prebiotic phenomena. Studies of the ISM reveal that the organic refractory component of the diffuse ISM is largely hydrocarbon in nature, possessing little N or O, with carbon distributed between the aromatic and aliphatic forms. There is a strong similarity in the near IR spectra of the diffuse ISM (the 3.4 micron hydrocarbon bands) and those seen in the Murchison and Orgueil meteorites, however, detailed comparisons at longer wavelengths reveal critical dissimilarities. Here we will present comparisons and discussion of relevant spectra. As we continue to explore, we will gain insight into the connection between planetesimals in the solar system and chemistry in the dusty space between the stars.

Leipzig Ice Nucleation chamber Comparison (LINC): intercomparison of four online ice nucleation counters

NASA Astrophysics Data System (ADS)

Burkert-Kohn, Monika; Wex, Heike; Welti, André; Hartmann, Susan; Grawe, Sarah; Hellner, Lisa; Herenz, Paul; Atkinson, James D.; Stratmann, Frank; Kanji, Zamin A.

2017-09-01

Ice crystal formation in atmospheric clouds has a strong effect on precipitation, cloud lifetime, cloud radiative properties, and thus the global energy budget. Primary ice formation above 235 K is initiated by nucleation on seed aerosol particles called ice-nucleating particles (INPs). Instruments that measure the ice-nucleating potential of aerosol particles in the atmosphere need to be able to accurately quantify ambient INP concentrations. In the last decade several instruments have been developed to investigate the ice-nucleating properties of aerosol particles and to measure ambient INP concentrations. Therefore, there is a need for intercomparisons to ensure instrument differences are not interpreted as scientific findings.In this study, we intercompare the results from parallel measurements using four online ice nucleation chambers. Seven different aerosol types are tested including untreated and acid-treated mineral dusts (microcline, which is a K-feldspar, and kaolinite), as well as birch pollen washing waters. Experiments exploring heterogeneous ice nucleation above and below water saturation are performed to cover the whole range of atmospherically relevant thermodynamic conditions that can be investigated with the intercompared chambers. The Leipzig Aerosol Cloud Interaction Simulator (LACIS) and the Portable Immersion Mode Cooling chAmber coupled to the Portable Ice Nucleation Chamber (PIMCA-PINC) performed measurements in the immersion freezing mode. Additionally, two continuous-flow diffusion chambers (CFDCs) PINC and the Spectrometer for Ice Nuclei (SPIN) are used to perform measurements below and just above water saturation, nominally presenting deposition nucleation and condensation freezing.The results of LACIS and PIMCA-PINC agree well over the whole range of measured frozen fractions (FFs) and temperature. In general PINC and SPIN compare well and the observed differences are explained by the ice crystal growth and different residence times in the chamber. To study the mechanisms responsible for the ice nucleation in the four instruments, the FF (from LACIS and PIMCA-PINC) and the activated fraction, AF (from PINC and SPIN), are compared. Measured FFs are on the order of a factor of 3 higher than AFs, but are not consistent for all aerosol types and temperatures investigated. It is shown that measurements from CFDCs cannot be assumed to produce the same results as those instruments exclusively measuring immersion freezing. Instead, the need to apply a scaling factor to CFDCs operating above water saturation has to be considered to allow comparison with immersion freezing devices. Our results provide further awareness of factors such as the importance of dispersion methods and the quality of particle size selection for intercomparing online INP counters.

REVIEW OF INDEPENDENT NURSE PRESCRIBING IN A PAEDIATRIC CYSTIC FIBROSIS (CF) AND RESPIRATORY POPULATION.

PubMed

Chana, Gabis; Tabberner, Michelle; Nixon, Wendy; Frost, Sue; Barrett, Leslie; Desai, Maya; Paskin, Lucy

2016-09-01

With pressures on junior doctors' availability in the NHS, non-medical prescribing is topical. Independent Nurse Prescribers (INPs) can prescribe any licensed medicine for any medical condition within their level of competence.1 An audit was undertaken of the four INPs employed by the Respiratory Department evaluating current prescribing practices. The requirement for this audit was identified by the multidisciplinary team (MDT) and Trust approval was obtained. A data collection form was designed capturing patient demographics and full details of prescribed items.Over a 3 month period (August to October 2014) outpatient cystic fibrosis (CF) and respiratory prescriptions were studied using cluster sampling. Over a 6 week period prescription requests by CF INPs faxed to General Practitioners (GPs) were reviewed. INPs also prescribe via telephone, documenting advice on trust forms; these were preliminarily audited. All data was analysed using Microsoft Excel. Legality of prescriptions and adherence to national and local guidelines were evaluated. Reference keys were used to designate non-adherence post-application of exclusion criteria. A total of 77 outpatient prescriptions (45 CF and 32 respiratory) were completed by the 4 INPs, containing 122 items (72 CF and 50 respiratory). Of the CF prescribed items 21 were oral antibiotics (29%). Respiratory INPs mainly prescribed 14 inhaler devices (28%) and 12 inhaled bronchodilators (24%).All INP prescriptions met legal requirements. Basic details of medicinal products (drug name and dose) were documented for all items. A key finding was that duration/quantity was not indicated for 27 (54%) respiratory items.After applying exclusion criteria, of the CF prescribed items, 56/59 (95%) adhered to national guidelines and 47/66 (71%) followed local guidelines. The leading reason for not following local guidelines was not documenting allergy status. Of the respiratory prescribed items, 34 (100%) adhered to national guidelines and 31/32 (97%) followed local guidelines.A total of 33 faxes (with 38 items) were completed and 35 items (92%) were oral antibiotics. Drug name, dose and frequency were stated for all items. From the faxed items, 38 (100%) adhered to national guidelines and 32/33 (97%) followed local guidelines.Over 5 days, CF INPs provided telephone advice for 12 patients. Of these, 6 patients had respiratory exacerbation. Telephone advice led to faxes being sent to GPs for 9 patients. This was preliminary data with a re-audit planned after amendment of trust form. Overall INP prescribing was found to be safe and effective. This review enabled education of the respiratory team of prescribing practices via a local audit meeting. The positive contribution that INPs provide to patient care was highlighted as they improve the patient journey and support the MDT. The demand for INP prescribing in particular with CF has provided opportunity for a pharmacist prescriber to join the CF MDT. It is recommended medical and pharmacist prescribing to be reviewed. Published by the BMJ Publishing Group Limited. For permission to use (where not already granted under a licence) please go to http://www.bmj.com/company/products-services/rights-and-licensing/

Photovoltaic Performance and Interface Behaviors of Cu(In,Ga)Se2 Solar Cells with a Sputtered-Zn(O,S) Buffer Layer by High-Temperature Annealing.

PubMed

Wi, Jae-Hyung; Kim, Tae Gun; Kim, Jeong Won; Lee, Woo-Jung; Cho, Dae-Hyung; Han, Won Seok; Chung, Yong-Duck

2015-08-12

We selected a sputtered-Zn(O,S) film as a buffer material and fabricated a Cu(In,Ga)Se2 (CIGS) solar cell for use in monolithic tandem solar cells. A thermally stable buffer layer was required because it should withstand heat treatment during processing of top cell. Postannealing treatment was performed on a CIGS solar cell in vacuum at temperatures from 300-500 °C to examine its thermal stability. Serious device degradation particularly in VOC was observed, which was due to the diffusion of thermally activated constituent elements. The elements In and Ga tend to out-diffuse to the top surface of the CIGS, while Zn diffuses into the interface of Zn(O,S)/CIGS. Such rearrangement of atomic fractions modifies the local energy band gap and band alignment at the interface. The notch-shape induced at the interface after postannealing could function as an electrical trap during electron transport, which would result in the reduction of solar cell efficiency.

Formation of nanogaps in InAs nanowires by selectively etching embedded InP segments.

PubMed

Schukfeh, M I; Storm, K; Hansen, A; Thelander, C; Hinze, P; Beyer, A; Weimann, T; Samuelson, L; Tornow, M

2014-11-21

We present a method to fabricate nanometer scale gaps within InAs nanowires by selectively etching InAs/InP heterostructure nanowires. We used vapor-liquid-solid grown InAs nanowires with embedded InP segments of 10-60 nm length and developed an etching recipe to selectively remove the InP segment. A photo-assisted wet etching process in a mixture of acetic acid and hydrobromic acid gave high selectivity, with accurate removal of InP segments down to 20 nm, leaving the InAs wire largely unattacked, as verified using scanning electron and transmission electron microscopy. The obtained nanogaps in InAs wires have potential as semiconducting electrodes to investigate electronic transport in nanoscale objects. We demonstrate this functionality by dielectrophoretically trapping 30 nm diameter gold nanoparticles into the gap.

An improved large signal model of InP HEMTs

NASA Astrophysics Data System (ADS)

Li, Tianhao; Li, Wenjun; Liu, Jun

2018-05-01

An improved large signal model for InP HEMTs is proposed in this paper. The channel current and charge model equations are constructed based on the Angelov model equations. Both the equations for channel current and gate charge models were all continuous and high order drivable, and the proposed gate charge model satisfied the charge conservation. For the strong leakage induced barrier reduction effect of InP HEMTs, the Angelov current model equations are improved. The channel current model could fit DC performance of devices. A 2 × 25 μm × 70 nm InP HEMT device is used to demonstrate the extraction and validation of the model, in which the model has predicted the DC I–V, C–V and bias related S parameters accurately. Project supported by the National Natural Science Foundation of China (No. 61331006).

Low-Temperature epitaxial growth of InGaAs films on InP(100) and InP(411) A substrates

NASA Astrophysics Data System (ADS)

Galiev, G. B.; Klimova, E. A.; Pushkarev, S. S.; Klochkov, A. N.; Trunkin, I. N.; Vasiliev, A. L.; Maltsev, P. P.

2017-07-01

The structural and electrical characteristics of In0.53Ga0.47As epitaxial films, grown in the low-temperature mode on InP substrates with (100) and (411) A crystallographic orientations at flow ratios of As4 molecules and In and Ga atoms of γ = 29 and 90, have been comprehensively studied. The use of InP(411) A substrates is shown to increase the probability of forming two-dimensional defects (twins, stacking faults, dislocations, and grain boundaries), thus reducing the mobility of free electrons, and AsGa point defects, which act as donors and increase the free-electron concentration. An increase in γ from 29 to 90 leads to transformation of single-crystal InGaAs films grown on (100) and (411) A substrates into polycrystalline ones.

Structural, electronic and magnetic properties of metal thiophosphate InPS4

NASA Astrophysics Data System (ADS)

Rajpoot, Priyanka; Nayak, Vikas; Kumari, Meena; Yadav, Priya; Nautiyal, Shashank; Verma, U. P.

2017-05-01

The non-centrosymmetric crystal, InPS4, has been investigated by means of density functional theory (DFT). In this paper we have calculated the structural parameters, electronic band structures, density of states plot and magnetic properties using full potential linearized augmented plane wave (FP-LAPW) method. The exchange correlation has been solved employing the generalised gradient approximation due to Perdew-Burke-Ernzerhof. The calculations are performed both without spin as well as spin polarized. The results show that InPS4 is an indirect band gap semiconductor with (N-Г) energy gap of 2.32eV (without spin) and 1.86eV in spin up and down channels.The obtained lattice parameters and energy gap agree well with the experimental results. Our reported magnetic moment results show that the property of InPS4is nonmagnetic.

Development of lithium diffused radiation resistant solar cells, part 2

NASA Technical Reports Server (NTRS)

Payne, P. R.; Somberg, H.

1971-01-01

The work performed to investigate the effect of various process parameters on the performance of lithium doped P/N solar cells is described. Effort was concentrated in four main areas: (1) the starting material, (2) the boron diffusion, (3) the lithium diffusion, and (4) the contact system. Investigation of starting material primarily involved comparison of crucible grown silicon (high oxygen content) and Lopex silicon (low oxygen content). In addition, the effect of varying growing parameters of crucible grown silicon on lithium cell output was also examined. The objective of the boron diffusion studies was to obtain a diffusion process which produced high efficiency cells with minimal silicon stressing and could be scaled up to process 100 or more cells per diffusion. Contact studies included investigating sintering of the TiAg contacts and evaluation of the contact integrity.

Biological particles capable of triggering ice nucleation in the atmosphere

NASA Astrophysics Data System (ADS)

Felgitsch, Laura; Bichler, Magdalena; Vogel, André; Häusler, Thomas; Grothe, Hinrich

2016-04-01

Ice-nucleating particles (INPs) have a huge impact on atmospheric processes, since they can trigger ice cloud formation. In general, ice clouds interfere with the radiation balance of planet Earth effectively at high altitudes. Since ambient matter of biological origin tends to have rather large aerodynamic diameters, it exhibits a fast sinking velocity and can only reach limited altitudes. Therefore, research focused on materials found in higher quantities in the upper atmosphere. However, recent findings indicate that the role of biological INPs has been underestimated in the past. In 2012 Pummer and colleagues found that the INPs from birch pollen can be washed off and constitute of macromolecules in the size-range of a few nanometres. With such a small diameter, they show a much longer life span in the upper atmosphere than expected. Further, Huffman and colleagues showed in 2013 a burst of biological INPs over woodlands triggered by rain events, which matches the finding of Pummer et al. well. Plants originating from the northern timberline experience harsh conditions with night frost even during the warm seasons. To prevent frost damages, those plants developed coping mechanisms. Many plant species, which are domestic in cold weather zones, exhibit ice nucleation activity. Therefore, it is important to examine those plants to understand the scale at which biological INPs can be emitted. For the presented results we focus on two types of samples: Berries and tree pollen. Both belong to plants domestic at the northern timberline. With our results we are able to show that INPs are spread vastly throughout different species. Furthermore, all those INPs show certain similarities to each other, most importantly, all of the found INPs seem to be associated to macromolecules in the nano-particulate size range. We examined the INPs from birch pollen more closely. Results indicate that proteins play a major role. Pummer, B., Bauer, H., Bernardi, J., Bleicher, S., Grothe, H.; Suspendable macromolecules are responsible for ice nucleation activity of birch and conifer pollen; Atmos. Chem. Phys., 12, 2541 - 2550, 2012. Huffman J.A., Prenni A.J., DeMott P.J., Pöhlker C., Mason R.H., Robinson N.H., Frohlich-Nowoisky J., Tobo Y., Després V.R., Garcia E., Gochis D.J., Harris E., Müller-Germann I., Ruzene C., Schmer B., Sinha B., Day D.A., Andreae M.O., Jimenez J.L., Gallagher M., Kreidenweis S.M., Bertram A.K., Pöschl U., High Concentrations of Biological Aerosol Particles and Ice Nuclei During and After Rain; Atmos. Chem. Phys. Vol. 13; pp 6151-6164, 2013.

The Horizontal Ice Nucleation Chamber (HINC): INP measurements at conditions relevant for mixed-phase clouds at the High Altitude Research Station Jungfraujoch

NASA Astrophysics Data System (ADS)

Lacher, Larissa; Lohmann, Ulrike; Boose, Yvonne; Zipori, Assaf; Herrmann, Erik; Bukowiecki, Nicolas; Steinbacher, Martin; Kanji, Zamin A.

2017-12-01

In this work we describe the Horizontal Ice Nucleation Chamber (HINC) as a new instrument to measure ambient ice-nucleating particle (INP) concentrations for conditions relevant to mixed-phase clouds. Laboratory verification and validation experiments confirm the accuracy of the thermodynamic conditions of temperature (T) and relative humidity (RH) in HINC with uncertainties in T of ±0.4 K and in RH with respect to water (RHw) of ±1.5 %, which translates into an uncertainty in RH with respect to ice (RHi) of ±3.0 % at T > 235 K. For further validation of HINC as a field instrument, two measurement campaigns were conducted in winters 2015 and 2016 at the High Altitude Research Station Jungfraujoch (JFJ; Switzerland, 3580 m a. s. l. ) to sample ambient INPs. During winters 2015 and 2016 the site encountered free-tropospheric conditions 92 and 79 % of the time, respectively. We measured INP concentrations at 242 K at water-subsaturated conditions (RHw = 94 %), relevant for the formation of ice clouds, and in the water-supersaturated regime (RHw = 104 %) to represent ice formation occurring under mixed-phase cloud conditions. In winters 2015 and 2016 the median INP concentrations at RHw = 94 % was below the minimum detectable concentration. At RHw = 104 %, INP concentrations were an order of magnitude higher, with median concentrations in winter 2015 of 2.8 per standard liter (std L-1; normalized to standard T of 273 K and pressure, p, of 1013 hPa) and 4.7 std L-1 in winter 2016. The measurements are in agreement with previous winter measurements obtained with the Portable Ice Nucleation Chamber (PINC) of 2.2 std L-1 at the same location. During winter 2015, two events caused the INP concentrations at RHw = 104 % to significantly increase above the campaign average. First, an increase to 72.1 std L-1 was measured during an event influenced by marine air, arriving at the JFJ from the North Sea and the Norwegian Sea. The contribution from anthropogenic or other sources can thereby not be ruled out. Second, INP concentrations up to 146.2 std L-1 were observed during a Saharan dust event. To our knowledge this is the first time that a clear enrichment in ambient INP concentration in remote regions of the atmosphere is observed during a time of marine air mass influence, suggesting the importance of marine particles on ice nucleation in the free troposphere.

Growing InGaAs quasi-quantum wires inside semi-rhombic shaped planar InP nanowires on exact (001) silicon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Han, Yu; Li, Qiang; Lau, Kei May, E-mail: eekmlau@ust.hk

We report InGaAs quasi-quantum wires embedded in planar InP nanowires grown on (001) silicon emitting in the 1550 nm communication band. An array of highly ordered InP nanowire with semi-rhombic cross-section was obtained in pre-defined silicon V-grooves through selective-area hetero-epitaxy. The 8% lattice mismatch between InP and Si was accommodated by an ultra-thin stacking disordered InP/GaAs nucleation layer. X-ray diffraction and transmission electron microscope characterizations suggest excellent crystalline quality of the nanowires. By exploiting the morphological evolution of the InP and a self-limiting growth process in the V-grooves, we grew embedded InGaAs quantum-wells and quasi-quantum-wires with tunable shape and position. Roommore » temperature analysis reveals substantially improved photoluminescence in the quasi-quantum wires as compared to the quantum-well reference, due to the reduced intrusion defects and enhanced quantum confinement. These results show great promise for integration of III-V based long wavelength nanowire lasers on the well-established (001) Si platform.« less

A Novel Approach To Improve the Efficiency of Block Freeze Concentration Using Ice Nucleation Proteins with Altered Ice Morphology.

PubMed

Jin, Jue; Yurkow, Edward J; Adler, Derek; Lee, Tung-Ching

2017-03-22

Freeze concentration is a separation process with high success in product quality. The remaining challenge is to achieve high efficiency with low cost. This study aims to evaluate the potential of using ice nucleation proteins (INPs) as an effective method to improve the efficiency of block freeze concentration while also exploring the related mechanism of ice morphology. Our results show that INPs are able to significantly improve the efficiency of block freeze concentration in a desalination model. Using this experimental system, we estimate that approximately 50% of the energy cost can be saved by the inclusion of INPs in desalination cycles while still meeting the EPA standard of drinking water (<500 ppm). Our investigative tools for ice morphology include optical microscopy and X-ray computed tomography imaging analysis. Their use indicates that INPs promote the development of a lamellar structured ice matrix with larger hydraulic diameters, which facilitates brine drainage and contains less brine entrapment as compared to control samples. These results suggest great potential for applying INPs to develop an energy-saving freeze concentration method via the alteration of ice morphology.

Using Ice Nucleating Particles to Enable Desublimation on Chilled Substrates

NASA Astrophysics Data System (ADS)

O'Brien, Julia; Failor, Kevin; Bisbano, Caitlin; Mulroe, Megan; Nath, Saurabh; Vinatzer, Boris; Boreyko, Jonathan

2017-11-01

On a subfreezing surface, nucleating embryos usually form as supercooled condensate that later freeze into ice, as opposed to desublimation. Ice nucleating particles (INPs) have been widely used to freeze existing water; however, nobody has studied how they might affect the initial mode of nucleation. Here, we show that INPs deposited on a substrate can switch the mode of embryo nucleation to desublimation, rather than supercooled condensation. Deposition was achieved by evaporating a water droplet containing INPs on a hydrophobic silicon wafer. A Peltier stage was used to cool the wafer down inside of a controlled humidity chamber, such that the desired set point temperature correlated with the dew point and onset of nucleation. Beneath a critical surface temperature, microscopy indicated that desublimation occurred on the circular patch of deposited INPs, compared to supercooled condensation outside the circle. The hydrophobic surface was then patterned with hydrophilic stripe arrays, which facilitated the deposition of stripes of INPs via the same evaporation method. The resulting array of desublimating ice stripes created dry zones free of condensation or frost in the intermediate areas, as the hygroscopic ice stripes served as overlapping humidity sinks.

Facile synthesis of uniform large-sized InP nanocrystal quantum dots using tris(tert-butyldimethylsilyl)phosphine

PubMed Central

2012-01-01

Colloidal III-V semiconductor nanocrystal quantum dots [NQDs] have attracted interest because they have reduced toxicity compared with II-VI compounds. However, the study and application of III-V semiconductor nanocrystals are limited by difficulties in their synthesis. In particular, it is difficult to control nucleation because the molecular bonds in III-V semiconductors are highly covalent. A synthetic approach of InP NQDs was presented using newly synthesized organometallic phosphorus [P] precursors with different functional moieties while preserving the P-Si bond. Introducing bulky side chains in our study improved the stability while facilitating InP formation with strong confinement at a readily low temperature regime (210°C to 300°C). Further shell coating with ZnS resulted in highly luminescent core-shell materials. The design and synthesis of P precursors for high-quality InP NQDs were conducted for the first time, and we were able to control the nucleation by varying the reactivity of P precursors, therefore achieving uniform large-sized InP NQDs. This opens the way for the large-scale production of high-quality Cd-free nanocrystal quantum dots. PMID:22289352

Fabrication of p(+)-n junction GaAs solar cells by a novel method

NASA Technical Reports Server (NTRS)

Ghandhi, S. K.; Mathur, G.; Rode, H.; Borrego, J. M.

1984-01-01

A novel method for making p(+)-n diffused junction GaAs solar cells, with the formation of a diffusion source, an anti-reflective coating, and a protective cover glass in a single chemical-vapor deposition operation is discussed. Consideration is given to device fabrication and to solar-cell characteristics. The advantages of the technique are that the number of process steps is kept to an absolute minimum, the fabrication procedure is low-cost, and the GaAs surface is protected during the entire operation.

The measurement and analysis of normal incidence solar UVB radiation and its application to the photoclimatherapy protocol for psoriasis at the Dead Sea, Israel.

PubMed

Kudish, Avraham I; Harari, Marco; Evseev, Efim G

2011-01-01

The broad-band normal incidence UVB beam radiation has been measured at Neve Zohar, Dead Sea basin, using a prototype tracking instrument composed of a Model 501A UV-Biometer mounted on an Eppley Solar Tracker Model St-1. The diffuse and beam fraction of the solar global UVB radiation have been determined using the concurrently measured solar global UVB radiation. The diffuse fraction was observed to exceed 80% throughout the year. The application of the results of these measurements to the possible revision of the photoclimatherapy protocol for psoriasis patients at the Dead Sea medical spas is now under investigation. The suggested revision would enable the sun-exposure treatment protocol to take advantage of the very high diffuse fraction by allowing the patient to receive the daily dose of UVB radiation without direct exposure to the sun, viz. receive the diffuse UVB radiation under a sunshade. This would require an increase in sun-exposure time intervals, as the UVB radiation intensity beneath a sunshade is less than that on an exposed surface. © 2010 The Authors. Photochemistry and Photobiology © 2010 The American Society of Photobiology.

Comparative radiation resistance, temperature dependence and performance of diffused junction indium phosphide solar cells

NASA Technical Reports Server (NTRS)

Weinberg, I.; Swartz, C. K.; Hart, R. E., Jr.; Ghandhi, S. K.; Borrego, J. M.

1987-01-01

Indium phosphide solar cells whose p-n junctions were processed by the open tube capped diffusion and by the closed tube uncapped diffusion of sulfur into Czochralski-grown p-type substrates are compared. Differences found in radiation resistance were attributed to the effects of increased base dopant concentration. Both sets of cells showed superior radiation resistance to that of gallium arsenide cells, in agreement with previous results. No correlation was, however, found between the open-circuit voltage and the temperature dependence of the maximum power.

Back-junction back-contact n-type silicon solar cell with diffused boron emitter locally blocked by implanted phosphorus

DOE Office of Scientific and Technical Information (OSTI.GOV)

Müller, Ralph, E-mail: ralph.mueller@ise.fraunhofer.de; Schrof, Julian; Reichel, Christian

2014-09-08

The highest energy conversion efficiencies in the field of silicon-based photovoltaics have been achieved with back-junction back-contact (BJBC) silicon solar cells by several companies and research groups. One of the most complex parts of this cell structure is the fabrication of the locally doped p- and n-type regions, both on the back side of the solar cell. In this work, we introduce a process sequence based on a synergistic use of ion implantation and furnace diffusion. This sequence enables the formation of all doped regions for a BJBC silicon solar cell in only three processing steps. We observed that implantedmore » phosphorus can block the diffusion of boron atoms into the silicon substrate by nearly three orders of magnitude. Thus, locally implanted phosphorus can be used as an in-situ mask for a subsequent boron diffusion which simultaneously anneals the implanted phosphorus and forms the boron emitter. BJBC silicon solar cells produced with such an easy-to-fabricate process achieved conversion efficiencies of up to 21.7%. An open-circuit voltage of 674 mV and a fill factor of 80.6% prove that there is no significant recombination at the sharp transition between the highly doped emitter and the highly doped back surface field at the device level.« less

Ionospheric Irregularities at Mars Probed by MARSIS Topside Sounding

NASA Astrophysics Data System (ADS)

Harada, Y.; Gurnett, D. A.; Kopf, A. J.; Halekas, J. S.; Ruhunusiri, S.

2018-01-01

The upper ionosphere of Mars contains a variety of perturbations driven by solar wind forcing from above and upward propagating atmospheric waves from below. Here we explore the global distribution and variability of ionospheric irregularities around the exobase at Mars by analyzing topside sounding data from the Mars Advanced Radar for Subsurface and Ionosphere Sounding (MARSIS) instrument on board Mars Express. As irregular structure gives rise to off-vertical echoes with excess propagation time, the diffuseness of ionospheric echo traces can be used as a diagnostic tool for perturbed reflection surfaces. The observed properties of diffuse echoes above unmagnetized regions suggest that ionospheric irregularities with horizontal wavelengths of tens to hundreds of kilometers are particularly enhanced in the winter hemisphere and at high solar zenith angles. Given the known inverse dependence of neutral gravity wave amplitudes on the background atmospheric temperature, the ionospheric irregularities probed by MARSIS are most likely associated with plasma perturbations driven by atmospheric gravity waves. Though extreme events with unusually diffuse echoes are more frequently observed for high solar wind dynamic pressures during some time intervals, the vast majority of the diffuse echo events are unaffected by varying solar wind conditions, implying limited influence of solar wind forcing on the generation of ionospheric irregularities. Combination of remote and in situ measurements of ionospheric irregularities would offer the opportunity for a better understanding of the ionospheric dynamics at Mars.

Analysis of Al diffusion processes in TiN barrier layers for the application in silicon solar cell metallization

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kumm, J.; Samadi, H.; Chacko, R. V.

An evaporated Al layer is known as an excellent rear metallization for highly efficient solar cells, but suffers from incompatibility with a common solder process. To enable solar cell-interconnection and module integration, in this work the Al layer is complemented with a solder stack of TiN/Ti/Ag or TiN/NiV/Ag, in which the TiN layer acts as an Al diffusion barrier. X-ray photoelectron spectroscopy measurements prove that diffusion of Al through the stack and the formation of an Al{sub 2}O{sub 3} layer on the stack's surface are responsible for a loss of solderability after a strong post-metallization anneal, which is often mandatorymore » to improve contact resistance and passivation quality. An optimization of the reactive TiN sputter process results in a densification of the TiN layer, which improves its barrier quality against Al diffusion. However, measurements with X-ray diffraction and scanning electron microscopy show that small grains with vertical grain boundaries persist, which still offer fast diffusion paths. Therefore, the concept of stuffing is introduced. By incorporating oxygen into the grain boundaries of the sputtered TiN layer, Al diffusion is strongly reduced as confirmed by secondary ion mass spectroscopy profiles. A quantitative analysis reveals a one order of magnitude lower Al diffusion coefficient for stuffed TiN layers. This metallization system maintains its solderability even after strong post-metallization annealing at 425 °C for 15 min. This paper thus presents an industrially feasible, conventionally solderable, and long-term stable metallization scheme for highly efficient silicon solar cells.« less

Lidar Ice nuclei estimates and how they relate with airborne in-situ measurements

NASA Astrophysics Data System (ADS)

Marinou, Eleni; Amiridis, Vassilis; Ansmann, Albert; Nenes, Athanasios; Balis, Dimitris; Schrod, Jann; Binietoglou, Ioannis; Solomos, Stavros; Mamali, Dimitra; Engelmann, Ronny; Baars, Holger; Kottas, Michael; Tsekeri, Alexandra; Proestakis, Emmanouil; Kokkalis, Panagiotis; Goloub, Philippe; Cvetkovic, Bojan; Nichovic, Slobodan; Mamouri, Rodanthi; Pikridas, Michael; Stavroulas, Iasonas; Keleshis, Christos; Sciare, Jean

2018-04-01

By means of available ice nucleating particle (INP) parameterization schemes we compute profiles of dust INP number concentration utilizing Polly-XT and CALIPSO lidar observations during the INUIT-BACCHUS-ACTRIS 2016 campaign. The polarization-lidar photometer networking (POLIPHON) method is used to separate dust and non-dust aerosol backscatter, extinction, mass concentration, particle number concentration (for particles with radius > 250 nm) and surface area concentration. The INP final products are compared with aerosol samples collected from unmanned aircraft systems (UAS) and analyzed using the ice nucleus counter FRIDGE.

Operational training for the mission operations at the Brazilian National Institute for Space Research (INPE)

NASA Technical Reports Server (NTRS)

Rozenfeld, Pawel

1993-01-01

This paper describes the selection and training process of satellite controllers and data network operators performed at INPE's Satellite Tracking and Control Center in order to prepare them for the mission operations of the INPE's first (SCD1) satellite. An overview of the ground control system and SCD1 architecture and mission is given. Different training phases are described, taking into account that the applicants had no previous knowledge of space operations requiring, therefore, a training which started from the basics.

Atmospheric scattering corrections to solar radiometry

NASA Technical Reports Server (NTRS)

Box, M. A.; Deepak, A.

1979-01-01

Whenever a solar radiometer is used to measure direct solar radiation, some diffuse sky radiation invariably enters the detector's field of view along with the direct beam. Therefore, the atmospheric optical depth obtained by the use of Bouguer's transmission law (also called Beer-Lambert's law), that is valid only for direct radiation, needs to be corrected by taking account of the scattered radiation. This paper discusses the correction factors needed to account for the diffuse (i,e., singly and multiply scattered) radiation and the algorithms developed for retrieving aerosol size distribution from such measurements. For a radiometer with a small field of view (half-cone angle of less than 5 deg) and relatively clear skies (optical depths less than 0.4), it is shown that the total diffuse contribution represents approximately 1% of the total intensity.

Developments toward an 18% efficient silicon solar cell

NASA Technical Reports Server (NTRS)

Meulenberg, A., Jr.

1983-01-01

Limitations to increased open-circuit voltage were identified and experimentally verified for 0.1 ohm-cm solar cells with heavily doped emitters. After major reduction in the dark current contribution from the metal-silicon interface of the grid contacts, the surface recombination velocity of the oxide-silicon interface of shallow junction solar cells is the limiting factor. In deep junction solar cells, where the junction field does not aid surface collection, the emitter bulk is the limiting factor. Singly-diffused, shallow junction cells have been fabricated with open circuit voltages in excess of 645 mV. Double-diffusion shallow and deep junctions cells have displayed voltages above 650 mV. MIS solar cells formed on 0.1 ohm-cm substrates have exibited the lowest dark currents produced in the course of the contract work.

Predicting efficiency of solar cells based on transparent conducting electrodes

NASA Astrophysics Data System (ADS)

Kumar, Ankush

2017-01-01

Efficiency of a solar cell is directly correlated with the performance of its transparent conducting electrodes (TCEs) which dictates its two core processes, viz., absorption and collection efficiencies. Emerging designs of a TCE involve active networks of carbon nanotubes, silver nanowires and various template-based techniques providing diverse structures; here, voids are transparent for optical transmittance while the conducting network acts as a charge collector. However, it is still not well understood as to which kind of network structure leads to an optimum solar cell performance; therefore, mostly an arbitrary network is chosen as a solar cell electrode. Herein, we propose a new generic approach for understanding the role of TCEs in determining the solar cell efficiency based on analysis of shadowing and recombination losses. A random network of wires encloses void regions of different sizes and shapes which permit light transmission; two terms, void fraction and equivalent radius, are defined to represent the TCE transmittance and wire spacings, respectively. The approach has been applied to various literature examples and their solar cell performance has been compared. To obtain high-efficiency solar cells, optimum density of the wires and their aspect ratio as well as active layer thickness are calculated. Our findings show that a TCE well suitable for one solar cell may not be suitable for another. For high diffusion length based solar cells, the void fraction of the network should be low while for low diffusion length based solar cells, the equivalent radius should be lower. The network with less wire spacing compared to the diffusion length behaves similar to continuous film based TCEs (such as indium tin oxide). The present work will be useful for architectural as well as material engineering of transparent electrodes for improvisation of solar cell performance.

TURBULENCE IN THE SOLAR WIND MEASURED WITH COMET TAIL TEST PARTICLES

DOE Office of Scientific and Technical Information (OSTI.GOV)

DeForest, C. E.; Howard, T. A.; Matthaeus, W. H.

2015-10-20

By analyzing the motions of test particles observed remotely in the tail of Comet Encke, we demonstrate that the solar wind undergoes turbulent processing enroute from the Sun to the Earth and that the kinetic energy entrained in the large-scale turbulence is sufficient to explain the well-known anomalous heating of the solar wind. Using the heliospheric imaging (HI-1) camera on board NASA's STEREO-A spacecraft, we have observed an ensemble of compact features in the comet tail as they became entrained in the solar wind near 0.4 AU. We find that the features are useful as test particles, via mean-motion analysismore » and a forward model of pickup dynamics. Using population analysis of the ensemble's relative motion, we find a regime of random-walk diffusion in the solar wind, followed, on larger scales, by a surprising regime of semiconfinement that we attribute to turbulent eddies in the solar wind. The entrained kinetic energy of the turbulent motions represents a sufficient energy reservoir to heat the solar wind to observed temperatures at 1 AU. We determine the Lagrangian-frame diffusion coefficient in the diffusive regime, derive upper limits for the small scale coherence length of solar wind turbulence, compare our results to existing Eulerian-frame measurements, and compare the turbulent velocity with the size of the observed eddies extrapolated to 1 AU. We conclude that the slow solar wind is fully mixed by turbulence on scales corresponding to a 1–2 hr crossing time at Earth; and that solar wind variability on timescales shorter than 1–2 hr is therefore dominated by turbulent processing rather than by direct solar effects.« less

Impact of aerosols on solar energy production - Scenarios from the Sahel Zone

NASA Astrophysics Data System (ADS)

Neher, Ina; Meilinger, Stefanie; Crewell, Susanne

2017-04-01

Solar energy is one option to serve the rising global energy demand with low environmental impact. Building an energy system with a considerable share of solar power requires long-term investment and a careful investigation of potential sites. Therefore, understanding the impacts from varying regionally and locally determined meteorological conditions on solar energy production will influence energy yield projections. Aerosols reduce global solar radiation due to absorption and scattering and therewith solar energy yields. Depending on aerosol size distribution they reduce the direct component of the solar radiation and modify the direction of the diffuse component compared to standard atmospheric conditions without aerosols. The aerosol size distribution and composition in the atmosphere is highly variable due to meteorological and land surface conditions. A quantitative assessment of aerosol effects on solar power yields and its relation to land use change is of particular interest for developing countries countries when analyzing the potential of local power production. This study aims to identify the effect of atmospheric aerosols in three different land use regimes, namely desert, urban/polluted and maritime on the tilted plane of photovoltaic energy modules. Here we focus on the Sahel zone, i.e. Niamey, Niger (13.5 N;2.1 E), located at the edge of the Sahara where also detailed measurements of the atmospheric state are available over the year 2006. Guided by observations a model chain is used to determine power yields. The atmospheric aerosol composition will be defined by using the Optical Properties of Aerosols and Clouds (OPAC) library. Direct and diffuse radiation (up- and downward component) are then calculated by the radiative transfer model libRadtran which allows to calculate the diffuse component of the radiance from different azimuth and zenith angles. Then the diffuse radiance will be analytically transformed to an east, south and west facing module with different tilting angles (between 0° and 45°) from each direction and compared to the tilted diffuse radiation derived by the Perez-model (Loutzenhiser et al. 2007) which is widely used in the photovoltaic community. This will allow an assessment how well standard approaches work in tropical region under various aerosol conditions including strong dust outbreaks from the Sahara. This presentation will introduce the modeling chain to assess solar power yields for different photovoltaic modules in the Sahel zone and address their relative dependence on aerosol conditions.

Dynamics of Solar Energetic Particles in the Presence of a Shock Wave

NASA Astrophysics Data System (ADS)

Timofeev, V. E.; Petukhov, Ivan; Petukhov, Stanislav; Starodubtsev, Sergei

2003-07-01

From the analysis of problem solutions on the solar energetic particle propagation in the presence of a plane shock wave described by the diffusion convective transport equation, the condition and manifestations for the influence of a shock wave on the SEP propagation in the solar wind have been determined. Solar energetic particles (SEP) in gradual events are generated by shock waves (see, for example, [1] and references there). The SEP generation region is limited, on the whole, by the solar corona. Proton fluxes of 470 MeV to 21 GeV energies, a maximum of which occur at a time when the shock in the atmosphere of the Sun reaches heights equal to 5 10 solar radii [2] indicate to it. It is also confirmed by the significant advancing of the occurrence time of maximum in the SEP intensity with kinetic energies more than 10 MeV relative to the shock front arrival moment to Earth's orbit. model calculations for the particles acceleration by the diffusive mechanism in conditions, typical for the solar corona, show that the time taken to pass the solar atmosphere by the shock is quite sufficient to form the particle spectrum corresponding to the SEP characteristics observed [3,4]. Lee and Ryan [5] investigated the problem of SEP gradual event generation, propagation and confirmed the close association between the diffusive acceleration mechanism and SEP events. The absence of depending of particle diffusion coefficients on the energy is a lack of this model. As an extension of preceding investigations, in this work the temporal dynamics of the particle spectrum in the presence of a plane shock for diffusion coefficients depending on the particle energy and also their change in time is studied. The SEP event from a moment of arising of a shock to a moment of it's arrival on the Earth's orbit can be divided on two stages: the first stage (duration is ˜ 1 hour) is a generation of SEP in the solar corona, the second stage (duration is ˜ 1 day) is a propagation in interplanetary space in the presence of a shock. Here we consider the second stage only which as believed to be began with the injection of the particle spectrum formed during the first stage.

The Sun is a plasma diffuser that sorts atoms by mass

DOE Office of Scientific and Technical Information (OSTI.GOV)

Manuel, O., E-mail: omatumr@yahoo.com; Kamat, S. A.; Mozina, M.

2006-11-15

The Sun is a plasma diffuser that selectively moves light elements like H and He and the lighter isotopes of each element to its surface. The Sun formed on the collapsed core of a supernova (SN) and is composed mostly of elements made near the SN core (Fe, O, Ni, Si, and S), like the rocky planets and ordinary meteorites. Neutron emission from the central neutron star triggers a series of reactions that generate solar luminosity, solar neutrinos, solar mass fractionation, and an outpouring of hydrogen in the solar wind. Mass fractionation seems to have operated in the parent starmore » and likely occurs in other stars as well.« less

INPE LANDSAT-D thematic mapper computer compatible tape format specification

NASA Technical Reports Server (NTRS)

Parada, N. D. J. (Principal Investigator); Desouza, R. C. M.

1982-01-01

The format of the computer compatible tapes (CCT) which contain Thematic Mapper (TM) imagery data acquired from the LANDSAT D and D Prime satellites by the INSTITUTO DE PERSQUISAS ESPACIALS (CNPq-INPE/BRAZIL) is defined.

Recent progress of Spectrolab high-efficiency space solar cells

NASA Astrophysics Data System (ADS)

Law, Daniel C.; Boisvert, J. C.; Rehder, E. M.; Chiu, P. T.; Mesropian, S.; Woo, R. L.; Liu, X. Q.; Hong, W. D.; Fetzer, C. M.; Singer, S. B.; Bhusari, D. M.; Edmondson, K. M.; Zakaria, A.; Jun, B.; Krut, D. D.; King, R. R.; Sharma, S. K.; Karam, N. H.

2013-09-01

Recent progress in III-V multijunction space solar cell has led to Spectrolab's GaInP/GaAs/Ge triple-junction, XTJ, cells with average 1-sun efficiency of 29% (AM0, 28°C) for cell size ranging from 59 to 72-cm2. High-efficiency inverted metamorphic (IMM) multijunction cells are developed as the next space solar cell architecture. Spectrolab's large-area IMM3J and IMM4J cells have achieved 33% and 34% 1-sun, AM0 efficiencies, respectively. The IMM3J and the IMM4J cells have both demonstrated normalized power retention of 0.86 at 5x1014 e-/cm2 fluence and 0.83 and 0.82 at 1x1015 e-/cm2 fluence post 1-MeV electron radiation, respectively. The IMM cells were further assembled into coverglass-interconnect-cell (CIC) strings and affixed to typical rigid aluminum honeycomb panels for thermal cycling characterization. Preliminary temperature cycling data of two coupons populated with IMM cell strings showed no performance degradation. Spectrolab has also developed semiconductor bonded technology (SBT) where highperformance component subcells were grown on GaAs and InP substrates separately then bonded directly to form the final multijunction cells. Large-area SBT 5-junction cells have achieved a 35.1% efficiency under 1-sun, AM0 condition.

On the role of ice-nucleating aerosol in the formation of ice particles in tropical mesoscale convective systems

NASA Astrophysics Data System (ADS)

Ladino, Luis A.; Korolev, Alexei; Heckman, Ivan; Wolde, Mengistu; Fridlind, Ann M.; Ackerman, Andrew S.

2017-02-01

Over the decades, the cloud physics community has debated the nature and role of aerosol particles in ice initiation. The present study shows that the measured concentration of ice crystals in tropical mesoscale convective systems exceeds the concentration of ice nucleating particles (INPs) by several orders of magnitude. The concentration of INPs was assessed from the measured aerosol particle concentration in the size range of 0.5 to 1 µm. The observations from this study suggest that primary ice crystals formed on INPs make only a minor contribution to the total concentration of ice crystals in tropical mesoscale convective systems. This is found by comparing the predicted INP number concentrations with in situ ice particle number concentrations. The obtained measurements suggest that ice multiplication is the likely explanation for the observed high concentrations of ice crystals in this type of convective system.

Control of morphology and crystal purity of InP nanowires by variation of phosphine flux during selective area MOMBE

NASA Astrophysics Data System (ADS)

Kelrich, A.; Dubrovskii, V. G.; Calahorra, Y.; Cohen, S.; Ritter, D.

2015-02-01

We present experimental results showing how the growth rate, morphology and crystal structure of Au-catalyzed InP nanowires (NWs) fabricated by selective area metal organic molecular beam epitaxy can be tuned by the growth parameters: temperature and phosphine flux. The InP NWs with 20-65 nm diameters are grown at temperatures of 420 and 480 °C with the PH3 flow varying from 1 to 9 sccm. The NW tapering is suppressed at a higher temperature, while pure wurtzite crystal structure is preferred at higher phosphine flows. Therefore, by combining high temperature and high phosphine flux, we are able to fabricate non-tapered and stacking fault-free InP NWs with the quality that other methods rarely achieve. We also develop a model for NW growth and crystal structure which explains fairly well the observed experimental tendencies.

On the role of ice-nucleating aerosol in the formation of ice particles in tropical mesoscale convective systems

PubMed Central

Ladino, Luis A.; Korolev, Alexei; Heckman, Ivan; Wolde, Mengistu; Fridlind, Ann M.; Ackerman, Andrew S.

2018-01-01

Over decades, the cloud physics community has debated the nature and role of aerosol particles in ice initiation. The present study shows that the measured concentration of ice crystals in tropical mesoscale convective systems exceeds the concentration of ice nucleating particles (INPs) by several orders of magnitude. The concentration of INPs was assessed from the measured aerosol particles concentration in the size range of 0.5 to 1 µm. The observations from this study suggest that primary ice crystals formed on INPs make only a minor contribution to the total concentration of ice crystals in tropical mesoscale convective systems. This is found by comparing the predicted INP number concentrations with in-situ ice particle number concentrations. The obtained measurements suggest that ice multiplication is the likely explanation for the observed high concentrations of ice crystals in this type of convective system. PMID:29551842

Fabrication of InP-pentacene inorganic-organic hybrid heterojunction using MOCVD grown InP for photodetector application

NASA Astrophysics Data System (ADS)

Sarkar, Kalyan Jyoti; Pal, B.; Banerji, P.

2018-04-01

We fabricated inorganic-organic hybrid heterojunction between indium phosphide (InP) and pentacene for photodetector application. InP layer was grown on n-Si substrate by atmospheric pressure metal organic chemical vapour deposition (MOCVD) technique. Morphological properties of InP and pentacene thin film were characterized by atomic force microscopy (AFM). Current-voltage characteristics were investigated in dark and under illumination condition at room temperature. During illumination, different wavelengths of visible and infrared light source were employed to perform the electrical measurement. Enhancement of photocurrent was observed with decreasing in wavelength of incident photo radiation. Ideality factor was found to be 1.92. High rectification ratio of 225 was found at ± 3 V in presence of infrared light source. This study provides new insights of inorganic-organic hybrid heterojunction for broadband photoresponse in visible to near infrared (IR) region under low reverse bias condition.

High performance InP JFETs grown by MOCVD using tertiarybutylphosphine

NASA Astrophysics Data System (ADS)

Hashemi, M. M.; Shealy, J. B.; Corvini, P. J.; Denbaars, S. P.; Mishra, U. K.

1994-02-01

Indium phosphide channel junction field effect transistors were fabricated by metalorganic chemical vapor deposition using tertiarybulylphosphine (TBP) as the alternative source for phosphine. At growth temperatures of 600°C, InP with specular surface morphology and mobilities as high as 61000 cm2/V s at 77Khas been achieved using trimethylindium and TBP. To improve device isolation, pinch-off characteristics, and output transconductance, we employ a high resistivity (1 × 108 Ω-cm) semi-insulating InP buffer layer using ferrocene as the Fe-dopant. Devices with gate lengths of 1 urn exhibit very high extrinsic transconductance of 130 mS/mm, gate-drain breakdown voltage exceeding 20 V, maximum current density of >450 mA/mm with record high fT and fmax of 15 GHz and 35 GHz, respectively. These results indicate: that InP JFETs are promising electronic devices for microwave power amplification, and that TBP is capable of device quality materials.

Indium phosphide nanowires and their applications in optoelectronic devices.

PubMed

Zafar, Fateen; Iqbal, Azhar

2016-03-01

Group IIIA phosphide nanocrystalline semiconductors are of great interest among the important inorganic materials because of their large direct band gaps and fundamental physical properties. Their physical properties are exploited for various potential applications in high-speed digital circuits, microwave and optoelectronic devices. Compared to II-VI and I-VII semiconductors, the IIIA phosphides have a high degree of covalent bonding, a less ionic character and larger exciton diameters. In the present review, the work done on synthesis of III-V indium phosphide (InP) nanowires (NWs) using vapour- and solution-phase approaches has been discussed. Doping and core-shell structure formation of InP NWs and their sensitization using higher band gap semiconductor quantum dots is also reported. In the later section of this review, InP NW-polymer hybrid material is highlighted in view of its application as photodiodes. Lastly, a summary and several different perspectives on the use of InP NWs are discussed.

Inverse metal-assisted chemical etching produces smooth high aspect ratio InP nanostructures.

PubMed

Kim, Seung Hyun; Mohseni, Parsian K; Song, Yi; Ishihara, Tatsumi; Li, Xiuling

2015-01-14

Creating high aspect ratio (AR) nanostructures by top-down fabrication without surface damage remains challenging for III-V semiconductors. Here, we demonstrate uniform, array-based InP nanostructures with lateral dimensions as small as sub-20 nm and AR > 35 using inverse metal-assisted chemical etching (I-MacEtch) in hydrogen peroxide (H2O2) and sulfuric acid (H2SO4), a purely solution-based yet anisotropic etching method. The mechanism of I-MacEtch, in contrast to regular MacEtch, is explored through surface characterization. Unique to I-MacEtch, the sidewall etching profile is remarkably smooth, independent of metal pattern edge roughness. The capability of this simple method to create various InP nanostructures, including high AR fins, can potentially enable the aggressive scaling of InP based transistors and optoelectronic devices with better performance and at lower cost than conventional etching methods.

Energetic Particles from Outside our Solar System Increase Artist Concept

NASA Image and Video Library

2011-12-16

This artist concept shows NASA Voyager 1 spacecraft in a new region at the edge of our solar system where the amount of high-energy particles diffusing into our solar system from outside has increased.

Calibration procedure of Hukseflux SR25 to Establish the Diffuse Reference for the Outdoor Broadband Radiometer Calibration

DOE Office of Scientific and Technical Information (OSTI.GOV)

Reda, Ibrahim M.; Andreas, Afshin M.

2017-08-01

Accurate pyranometer calibrations, traceable to internationally recognized standards, are critical for solar irradiance measurements. One calibration method is the component summation method, where the pyranometers are calibrated outdoors under clear sky conditions, and the reference global solar irradiance is calculated as the sum of two reference components, the diffuse horizontal and subtended beam solar irradiances. The beam component is measured with pyrheliometers traceable to the World Radiometric Reference, while there is no internationally recognized reference for the diffuse component. In the absence of such a reference, we present a method to consistently calibrate pyranometers for measuring the diffuse component. Themore » method is based on using a modified shade/unshade method and a pyranometer with less than 0.5 W/m2 thermal offset. The calibration result shows that the responsivity of Hukseflux SR25 pyranometer equals 10.98 uV/(W/m2) with +/-0.86 percent uncertainty.« less

Silica-sol-based spin-coating barrier layer against phosphorous diffusion for crystalline silicon solar cells

PubMed Central

2014-01-01

The phosphorus barrier layers at the doping procedure of silicon wafers were fabricated using a spin-coating method with a mixture of silica-sol and tetramethylammonium hydroxide, which can be formed at the rear surface prior to the front phosphorus spin-on-demand (SOD) diffusion and directly annealed simultaneously with the front phosphorus layer. The optimization of coating thickness was obtained by changing the applied spin-coating speed; from 2,000 to 8,000 rpm. The CZ-Si p-type silicon solar cells were fabricated with/without using the rear silica-sol layer after taking the sheet resistance measurements, SIMS analysis, and SEM measurements of the silica-sol material evaluations into consideration. For the fabrication of solar cells, a spin-coating phosphorus source was used to form the n+ emitter and was then diffused at 930°C for 35 min. The out-gas diffusion of phosphorus could be completely prevented by spin-coated silica-sol film placed on the rear side of the wafers coated prior to the diffusion process. A roughly 2% improvement in the conversion efficiency was observed when silica-sol was utilized during the phosphorus diffusion step. These results can suggest that the silica-sol material can be an attractive candidate for low-cost and easily applicable spin-coating barrier for any masking purpose involving phosphorus diffusion. PMID:25520602

Silica-sol-based spin-coating barrier layer against phosphorous diffusion for crystalline silicon solar cells.

PubMed

Uzum, Abdullah; Fukatsu, Ken; Kanda, Hiroyuki; Kimura, Yutaka; Tanimoto, Kenji; Yoshinaga, Seiya; Jiang, Yunjian; Ishikawa, Yasuaki; Uraoka, Yukiharu; Ito, Seigo

2014-01-01

The phosphorus barrier layers at the doping procedure of silicon wafers were fabricated using a spin-coating method with a mixture of silica-sol and tetramethylammonium hydroxide, which can be formed at the rear surface prior to the front phosphorus spin-on-demand (SOD) diffusion and directly annealed simultaneously with the front phosphorus layer. The optimization of coating thickness was obtained by changing the applied spin-coating speed; from 2,000 to 8,000 rpm. The CZ-Si p-type silicon solar cells were fabricated with/without using the rear silica-sol layer after taking the sheet resistance measurements, SIMS analysis, and SEM measurements of the silica-sol material evaluations into consideration. For the fabrication of solar cells, a spin-coating phosphorus source was used to form the n(+) emitter and was then diffused at 930°C for 35 min. The out-gas diffusion of phosphorus could be completely prevented by spin-coated silica-sol film placed on the rear side of the wafers coated prior to the diffusion process. A roughly 2% improvement in the conversion efficiency was observed when silica-sol was utilized during the phosphorus diffusion step. These results can suggest that the silica-sol material can be an attractive candidate for low-cost and easily applicable spin-coating barrier for any masking purpose involving phosphorus diffusion.

InGaAs/GaAsSb Type-II superlattice based photodiodes for short wave infrared detection

NASA Astrophysics Data System (ADS)

Uliel, Y.; Cohen-Elias, D.; Sicron, N.; Grimberg, I.; Snapi, N.; Paltiel, Y.; Katz, M.

2017-08-01

Short Wave Infra-Red (SWIR) photodetectors operating above the response cutoff of InGaAs- based detectors (1.7-2.5 μm) are required for both defense and civil applications. Type II Super-Lattices (T2SL) were recently proposed For near- room temperature SWIR detection as a possible system enabling bandgap adjustment in the required range. The work presented here focuses on a T2SL with alternating nano-layers of InGaAs and GaAsSb lattice-matched to an InP substrate. A near room temperature SWIR cutoff of 2.4 μm was measured. Electrical junctions were realized using Zn diffusion p-doping process. We realized and studied both mesa- and selective diffusion- based p-i-n photodiodes. Dark currents of mesa-based devices were 1.5 mA/cm2 and 32 μA/cm2 at 300 and 230 K respectively. Dark currents were reduced to 1.2 mA/cm2 and 12 μA/cm2 respectively by utilizing the selective diffusion process. The effect of operating voltage is discussed. At 300 K the quantum efficiency was up to 40% at 2.18 μm in mesa devices. D∗ was 1.7 ×1010cm ·√{Hz } /W at 2 μm.

Methods to Estimate Solar Radiation Dosimetry in Coral Reefs Using Remote Sensed, Modeled, and in Situ Data.

EPA Science Inventory

Solar irradiance has been increasingly recognized as an important determinant of bleaching in coral reefs, but measurements of solar radiation exposure within coral reefs have been relatively limited. Solar irradiance and diffuse down welling attenuation coefficients (Kd, m-1) we...

Atomistic investigations on the mechanical properties and fracture mechanisms of indium phosphide nanowires.

PubMed

Pial, Turash Haque; Rakib, Tawfiqur; Mojumder, Satyajit; Motalab, Mohammad; Akanda, M A Salam

2018-03-28

The mechanical properties of indium phosphide (InP) nanowires are an emerging issue due to the promising applications of these nanowires in nanoelectromechanical and microelectromechanical devices. In this study, molecular dynamics simulations of zincblende (ZB) and wurtzite (WZ) crystal structured InP nanowires (NWs) are presented under uniaxial tension at varying sizes and temperatures. It is observed that the tensile strengths of both types of NWs show inverse relationships with temperature, but are independent of the size of the nanowires. Moreover, applied load causes brittle fracture by nucleating cleavage on ZB and WZ NWs. When the tensile load is applied along the [001] direction, the direction of the cleavage planes of ZB NWs changes with temperature. It is found that the {111} planes are the cleavage planes at lower temperatures; on the other hand, the {110} cleavage planes are activated at elevated temperatures. In the case of WZ NWs, fracture of the material is observed to occur by cleaving along the (0001) plane irrespective of temperature when the tensile load is applied along the [0001] direction. Furthermore, the WZ NWs of InP show considerably higher strength than their ZB counterparts. Finally, the impact of strain rate on the failure behavior of InP NWs is also studied, and higher fracture strengths and strains at higher strain rates are found. With increasing strain rate, the number of cleavages also increases in the NWs. This paper also provides in-depth understanding of the failure behavior of InP NWs, which will aid the design of efficient InP NWs-based devices.

Use of Ice-Nucleating Proteins To Improve the Performance of Freeze-Thaw Valves in Microfluidic Devices.

PubMed

Gaiteri, Joseph C; Henley, W Hampton; Siegfried, Nathan A; Linz, Thomas H; Ramsey, J Michael

2017-06-06

Currently, reliable valving on integrated microfluidic devices fabricated from rigid materials is confined to expensive and complex methods. Freeze-thaw valves (FTVs) can provide a low cost, low complexity valving mechanism, but reliable implementation of them has been greatly hindered by the lack of ice nucleation sites within the valve body's small volume. Work to date has required very low temperatures (on the order of -40 °C or colder) to induce freezing without nucleation sites, making FTVs impractical due to instrument engineering challenges. Here, we report the use of ice-nucleating proteins (INPs) to induce ice formation at relatively warm temperatures in microfluidic devices. Microfluidic channels were filled with buffers containing femtomolar INP concentrations from Pseudomonas syringae. The channels were cooled externally with simple, small-footprint Peltier thermoelectric coolers (TECs), and the times required for channel freezing (valve closure) and thawing (valve opening) were measured. Under optimized conditions in plastic chips, INPs made sub-10 s actuations possible at TEC temperatures as warm as -13 °C. Additionally, INPs were found to have no discernible inhibitory effects in model enzyme-linked immunosorbent assays or polymerase chain reactions, indicating their compatibility with microfluidic systems that incorporate these widely used bioassays. FTVs with INPs provide a much needed reliable valving scheme for rigid plastic devices with low complexity, low cost, and no moving parts on the device or instrument. The reduction in freeze time, accessible actuation temperatures, chemical compatibility, and low complexity make the implementation of compact INP-based FTV arrays practical and attractive for the control of integrated biochemical assays.