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Sample records for dilute magnetic semiconductor

  1. Diluted magnetic semiconductors

    NASA Astrophysics Data System (ADS)

    Anderson, James R.

    1990-03-01

    Growth and physical properties of diluted magnetic semiconductors (DMS) were investigated. Growth included Bridgman, solid state recrystallization, and liquid phase epitaxy of Mercury(1-x)Manganese(x)Telluride and Mercury(1-x-y)Manganese(x)Cadmium(y)Telluride. Very uniform crystals were produced by solid state recrystallization. Physical properties studied included magnetization, optical response, and magnetotransport. From magnetization, the exchange interactions among magnetic ions have been deduced. Modulated spectroscopy gave details of the electronic structure of DMS and the quality of the material was indicated by the line widths. Magnetotransport, carried out in some cases to 30 T, showed a large negative magnetoresistance and subsequent increase. The Hg(1-x-y)Mn(x)Cd(y)Te has considerable promise for avalanche photodiodes between 1.2 and 1.8 micrometers.

  2. XAFS in dilute magnetic semiconductors.

    PubMed

    Sun, Zhihu; Yan, Wensheng; Yao, Tao; Liu, Qinghua; Xie, Yi; Wei, Shiqiang

    2013-10-14

    X-Ray absorption fine structure (XAFS) spectroscopy has experienced a rapid development in the last four decades and has proved to be a powerful structure characterization technique in the study of local environments in condensed matter. In this article, we first introduce the XAFS basic principles including theory, data analysis and experiment in some detail. Then we attempt to make a review on the applications of XAFS to the study of atomic and electronic structure in dilute magnetic semiconductor (DMS) systems. The power of XAFS in characterizing this interesting material system, such as determining the occupation sites and distribution of the dopants, detecting the presence of metal clusters or secondary phases, as well as identifying the defect types and dopant valence, will be illuminated by selected examples. This review should be of interest both to newcomers in the DMS field and to an interdisciplinary community of researchers working in synthesis, characterization and utilization of DMS materials. PMID:23884341

  3. XAFS in dilute magnetic semiconductors.

    PubMed

    Sun, Zhihu; Yan, Wensheng; Yao, Tao; Liu, Qinghua; Xie, Yi; Wei, Shiqiang

    2013-10-14

    X-Ray absorption fine structure (XAFS) spectroscopy has experienced a rapid development in the last four decades and has proved to be a powerful structure characterization technique in the study of local environments in condensed matter. In this article, we first introduce the XAFS basic principles including theory, data analysis and experiment in some detail. Then we attempt to make a review on the applications of XAFS to the study of atomic and electronic structure in dilute magnetic semiconductor (DMS) systems. The power of XAFS in characterizing this interesting material system, such as determining the occupation sites and distribution of the dopants, detecting the presence of metal clusters or secondary phases, as well as identifying the defect types and dopant valence, will be illuminated by selected examples. This review should be of interest both to newcomers in the DMS field and to an interdisciplinary community of researchers working in synthesis, characterization and utilization of DMS materials.

  4. Diluted magnetic semiconductor nanowires exhibiting magnetoresistance

    DOEpatents

    Yang, Peidong; Choi, Heonjin; Lee, Sangkwon; He, Rongrui; Zhang, Yanfeng; Kuykendal, Tevye; Pauzauskie, Peter

    2011-08-23

    A method for is disclosed for fabricating diluted magnetic semiconductor (DMS) nanowires by providing a catalyst-coated substrate and subjecting at least a portion of the substrate to a semiconductor, and dopant via chloride-based vapor transport to synthesize the nanowires. Using this novel chloride-based chemical vapor transport process, single crystalline diluted magnetic semiconductor nanowires Ga.sub.1-xMn.sub.xN (x=0.07) were synthesized. The nanowires, which have diameters of .about.10 nm to 100 nm and lengths of up to tens of micrometers, show ferromagnetism with Curie temperature above room temperature, and magnetoresistance up to 250 Kelvin.

  5. Diluted magnetic semiconductors with narrow band gaps

    NASA Astrophysics Data System (ADS)

    Gu, Bo; Maekawa, Sadamichi

    2016-10-01

    We propose a method to realize diluted magnetic semiconductors (DMSs) with p - and n -type carriers by choosing host semiconductors with a narrow band gap. By employing a combination of the density function theory and quantum Monte Carlo simulation, we demonstrate such semiconductors using Mn-doped BaZn2As2 , which has a band gap of 0.2 eV. In addition, we found a nontoxic DMS Mn-doped BaZn2Sb2 , of which the Curie temperature Tc is predicted to be higher than that of Mn-doped BaZn2As2 , the Tc of which was up to 230 K in a recent experiment.

  6. Diluted magnetic semiconductor superlattices and heterostructures

    NASA Astrophysics Data System (ADS)

    Datta, S.; Furdyna, J. K.; Gunshor, R. L.

    Diluted magnetic semiconductors (DMS) are mixed semiconducting crystals whose lattice is made up in part of substitutional magnetic ions. Cd 1-xMn xTe and Hg 1-xMn xTe are examples of such materials. Their structural and band parameters can be "tuned" by composition over a wide range. They can thus be exploited in situations completely similar to those involving Ga 1-xAl xAs. Using molecular beam epitaxy, we have grown Cd 1-xMn xTe superlattices with alternating Mn content, having up to 150 layers, with layer thickness ranging from 50 to 100 Å. The superlattice structure is clearly revealed by transmission electron microscopy and by zone-folding of the phonon spectrum observed in Raman scattering. Photoluminescence observed on Cd 1-xMn xTe superlattices is several orders of magnitude greater than that from a Cd 1-xMn xTe film with uniform Mn content, or from bulk Cd 1-xMn xTe specimens. The presence of localized magnetic moments in DMS results in a strong exchange interaction between these moments and band electrons. This in turn leads to gigantic Zeeman splittings of impurity states, exciton levels, Landau levels, and the bands themselves. Zeeman splittings as large as 20 meV (which in non-magnetic semiconductors would require unrealistic megagauss fields) are easily achieved in DMS in fields of several kilogauss. Since the magnitude of this exchange-induced splitting in DMS can be comparable to the binding energies and to the minigaps encountered in multiple quantum wells, DMS superlattices hold promise of a host of novel effects of both fundamental and applied interest.

  7. Terahertz radiation from magnetic excitations in diluted magnetic semiconductors.

    PubMed

    Rungsawang, R; Perez, F; Oustinov, D; Gómez, J; Kolkovsky, V; Karczewski, G; Wojtowicz, T; Madéo, J; Jukam, N; Dhillon, S; Tignon, J

    2013-04-26

    We probed, in the time domain, the THz electromagnetic radiation originating from spins in CdMnTe diluted magnetic semiconductor quantum wells containing high-mobility electron gas. Taking advantage of the efficient Raman generation process, the spin precession was induced by low power near-infrared pulses. We provide a full theoretical first-principles description of spin-wave generation, spin precession, and of emission of THz radiation. Our results open new perspectives for improved control of the direct coupling between spin and an electromagnetic field, e.g., by using semiconductor technology to insert the THz sources in cavities or pillars.

  8. EDITORIAL: Focus on Dilute Magnetic Semiconductors FOCUS ON DILUTE MAGNETIC SEMICONDUCTORS

    NASA Astrophysics Data System (ADS)

    Chambers, Scott A.; Gallagher, Bryan

    2008-05-01

    This focus issue of New Journal of Physics is devoted to the materials science of dilute magnetic semiconductors (DMS). A DMS is traditionally defined as a diamagnetic semiconductor doped with a few to several atomic per cent of some transition metal with unpaired d electrons. Several kinds of dopant-dopant interactions can in principle couple the dopant spins leading to a ferromagnetic ground state in a dilute magnetic system. These include superexchange, which occurs principally in oxides and only between dopants with one intervening oxygen, and double exchange, in which dopants of different formal charges exchange an electron. In both of these mechanisms, the ferromagnetic alignment is not critically dependent on free carriers in the host semiconductor because exchange occurs via bonds. A third mechanism, discovered in the last few years, involves electrons associated with lattice defects that can apparently couple dopant spins. This mechanism is not well understood. Finally, the most desirable mechanism is carrier-mediated exchange interaction in which the dopant spins are coupled by itinerant electrons or holes in the host semiconductor. This mechanism introduces a fundamental link between magnetic and electrical transport properties and offers the possibility of new spintronic functionalities. In particular electrical gate control of ferromagnetism and the use of spin polarized currents to carry signals for analog and digital applications. The spin light emitting diode is a prototypical device of this kind that has been extensively used to characterize the extent of spin polarization in the active light emitting semiconductor heterostructure. The prototypical carrier mediated ferromagnetic DMS is Mn-doped GaAs. This and closely related narrow gap III-V materials have been very extensively studied. Their properties are generally quite well understood and they have led to important insights into fundamental properties of ferromagnetic systems with strong spin

  9. Current density and state density in diluted magnetic semiconductor nanostructures

    NASA Astrophysics Data System (ADS)

    Pérez Merchancano, S. T.; Paredes Gutiérrez, H.; Zuñiga, J. A.

    2016-02-01

    We study in this paper the spin-polarized current density components in diluted magnetic semiconductor tunnelling diodes with different sample geometries. We calculate the resonant JxV and the density of states. The differential conductance curves are analyzed as functions of the applied voltage and the magnetic potential strength induced by the magnetic ions.

  10. Magnetization steps and bound magnetic polarons in diluted magnetic semiconductors

    NASA Astrophysics Data System (ADS)

    McCabe, Gao Hua

    1997-09-01

    Magnetization measurements and computer simulations were used to address several current problems in the area of the Diluted Magnetic Semiconductors (DMS). The method of Magnetization Steps (MSTs) was used to study Jahn-Teller Distortions in Zn1-xCrxTe, and exchange constants in Pb1-xEuxSe and Pb1- xEuxTe. Bound magnetic polarons in Cu2MnxZn1-xSnS4 were studied by conventional magnetometry. Jahn-Teller Distortions in cubic Zn1- xCrxTe were studied using MSTs. Possible Jahn- Teller Distortions in this material are along the three equivalent /langle 100/rangle axes. Energy states for the three distortion directions are equivalent at H = 0, but are different for finite H. The main issue is whether the populations of three possible distortions will vary with field, or remain frozen at their values in zero- field. The data showed that the populations of the distortions changed significantly. The dominant antiferomagnetic exchange constants J between Eu2+ ions in IV-VI Pb1- xEuxSe and Pb1-xEuxTe were determined using the MST method. Measurements were made at 0.6 K in fields up to 150 kOe. Supplementary data by our collaborators were taken at much lower temperatures. Simulations of various MSTs (from isolated Eu2+ ions, pairs of ions, and triplets) were performed to fit the experimental data. Because J is determined from the MSTs for pairs, the effects of other anisotropies and exchange interactions on these MSTs were considered. They were found to bring little change to the values of J. The exchange constants were J/kB = -0/24 ± 0.03 K for Ph 1-xEu xSe amd os J/KB = -0.264 ± 0.018 K for Ph1-xEuxTe. The dominant AF exchange constants were identified as J1, between nearest-neighbors, by comparing the experimental magnetization curves to the theoretical simulations using the single J model. The dominant antiferromagnetic exchange constants J between Eu2+ ions in IV-VI Pb1- xEuxSe and Pb1-xEuxTe were determined using the MST method. Measurements were made at 0.6 K in

  11. Uniform Doping in Quantum-Dots-Based Dilute Magnetic Semiconductor.

    PubMed

    Saha, Avijit; Shetty, Amitha; Pavan, A R; Chattopadhyay, Soma; Shibata, Tomohiro; Viswanatha, Ranjani

    2016-07-01

    Effective manipulation of magnetic spin within a semiconductor leading to a search for ferromagnets with semiconducting properties has evolved into an important field of dilute magnetic semiconductors (DMS). Although a lot of research is focused on understanding the still controversial origin of magnetism, efforts are also underway to develop new materials with higher magnetic temperatures for spintronics applications. However, so far, efforts toward quantum-dots(QDs)-based DMS materials are plagued with problems of phase separation, leading to nonuniform distribution of dopant ions. In this work, we have developed a strategy to synthesize highly crystalline, single-domain DMS system starting from a small magnetic core and allowing it to diffuse uniformly inside a thick CdS semiconductor matrix and achieve DMS QDs. X-ray absorption fine structure (XAFS) spectroscopy and energy-dispersive X-ray spectroscopy-scanning transmission electron microscopy (STEM-EDX) indicates the homogeneous distribution of magnetic impurities inside the semiconductor QDs leading to superior magnetic property. Further, the versatility of this technique was demonstrated by obtaining ultra large particles (∼60 nm) with uniform doping concentration as well as demonstrating the high quality magnetic response. PMID:27295453

  12. Uniform Doping in Quantum-Dots-Based Dilute Magnetic Semiconductor.

    PubMed

    Saha, Avijit; Shetty, Amitha; Pavan, A R; Chattopadhyay, Soma; Shibata, Tomohiro; Viswanatha, Ranjani

    2016-07-01

    Effective manipulation of magnetic spin within a semiconductor leading to a search for ferromagnets with semiconducting properties has evolved into an important field of dilute magnetic semiconductors (DMS). Although a lot of research is focused on understanding the still controversial origin of magnetism, efforts are also underway to develop new materials with higher magnetic temperatures for spintronics applications. However, so far, efforts toward quantum-dots(QDs)-based DMS materials are plagued with problems of phase separation, leading to nonuniform distribution of dopant ions. In this work, we have developed a strategy to synthesize highly crystalline, single-domain DMS system starting from a small magnetic core and allowing it to diffuse uniformly inside a thick CdS semiconductor matrix and achieve DMS QDs. X-ray absorption fine structure (XAFS) spectroscopy and energy-dispersive X-ray spectroscopy-scanning transmission electron microscopy (STEM-EDX) indicates the homogeneous distribution of magnetic impurities inside the semiconductor QDs leading to superior magnetic property. Further, the versatility of this technique was demonstrated by obtaining ultra large particles (∼60 nm) with uniform doping concentration as well as demonstrating the high quality magnetic response.

  13. Dilute Magnetic Semiconductors from Electrodeposited ZnO Nanowires

    SciTech Connect

    Athavan, Nadarajah; Konenkamp, R.

    2011-02-02

    We present experimental results on the magnetic properties of doped ZnO nanowires grown at 80 8C in electrodeposition. We show that impurities such as Al, Mn, Co, and Cu can be incorporated in the nanowires by adding the corresponding metal salts to the electrolyte solution. At concentration levels of a few atomic percent we find the impurity concentration in the solid to be approximately proportional to the precursor concentration in solution. ZnO nanowrires doped with Cu, Co, and Mn show superparamagnetic response at room temperature, while undoped and Al-doped wires show no discernible magnetic response. The results indicate that with Cu, Mn, and Co doping dilute magnetic semiconductors can be prepared.

  14. Scanning Hall probe microscopy of a diluted magnetic semiconductor

    SciTech Connect

    Kweon, Seongsoo; Samarth, Nitin; Lozanne, Alex de

    2009-05-01

    We have measured the micromagnetic properties of a diluted magnetic semiconductor as a function of temperature and applied field with a scanning Hall probe microscope built in our laboratory. The design philosophy for this microscope and some details are described. The samples analyzed in this work are Ga{sub 0.94}Mn{sub 0.06}As films grown by molecular beam epitaxy. We find that the magnetic domains are 2-4 mum wide and fairly stable with temperature. Magnetic clusters are observed above T{sub C}, which we ascribe to MnAs defects too small and sparse to be detected by a superconducting quantum interference device magnetometer.

  15. Spin-dependent shot noise in diluted magnetic semiconductor/semiconductor heterostructures with a nonmagnetic barrier

    NASA Astrophysics Data System (ADS)

    Wu, Shuang; Guo, Yong

    2014-05-01

    We investigate quantum size effect on the spin-dependent shot noise in the diluted magnetic semiconductor (DMS)/semiconductor heterostructure with a nonmagnetic semiconductor (NMS) barrier in the presence of external magnetic and electric fields. The results demonstrate that the NMS barrier plays a quite different role from the DMS layer in the electron transport process. It is found that spin-down shot noise shows relatively regular oscillations as the width of DMS layer increases, while the spin-up shot noise deceases monotonically. However, as the width of NMS layer increases, the spin-down shot noise displays irregular oscillations at first and then decreases while the spin-up shot noise decreases at a quite different rate. The results indicate that the shot noise can be used as a sensitive probe in detecting material type and its size.

  16. Spin selector based on periodic diluted-magnetic-semiconductor/nonmagnetic-barrier superlattices

    SciTech Connect

    Yang, Ping-Fan; Guo, Yong; Zhu, Rui

    2015-07-15

    We propose a spin selector based on periodic diluted-magnetic-semiconductor/nonmagnetic-barrier (DMS/NB) superlattices subjected to an external magnetic field. We find that the periodic DMS/NB superlattices can achieve 100% spin filtering over a dramatically broader range of incident energies than the diluted-magnetic-semiconductor/semiconductor (DMS/S) case studied previously. And the positions and widths of spin-filtering bands can be manipulated effectively by adjusting the geometric parameters of the system or the strength of external magnetic field. Such a compelling filtering feature stems from the introduction of nonmagnetic barrier and the spin-dependent giant Zeeman effect induced by the external magnetic field. We also find that the external electric field can exert a significant influence on the spin-polarized transport through the DMS/NB superlattices.

  17. New Models of Magnetic Interactions for Bound Magnetic Polarons in Dilute Magnetic Semiconductors

    NASA Astrophysics Data System (ADS)

    McIntyre, Cynthia R.

    The goal of the first part of this thesis is to develop a solvable model that better approximates the true exchange Hamiltonian of bound magnetic polarons (BMPs). The model replaces the single exchange constant (one-step) of the previous model by two exchange parameters (two-steps) of different coupling strengths. This formulation of the Hamiltonian breaks up some of the degeneracy of the one -step model. Determination of the relevant parameters is done using a Feynman (17) variational method. This method gives the optimal values for parameters in the model. A comparison of parameters, significant to the one-step model, using Feynman's variational method and a technique by Ryabchenko (14) will be presented. The second part of this thesis will focus on the effects of anisotropic exchange interaction, Dzyaloshinski (15) -Moriya (16) (DM) interaction, on the magnetization of the dilute magnetic semiconductors. Anisotropic exchange (DM) is the largest of the known non-spin conserving interactions. Because of its non-spin conserving property, anisotropic exchange is a probable mechanism for affecting the magnetization of Mn^{+2} pairs. Recent experimental research (22) on these materials has focused on the contribution of the DM interaction at the energy level crossings of Mn^{+2} pairs. We calculate the contribution of DM to the magnetization and compare to the linewidth of magnetization steps obtained from experiment. Also, we theoretically investigate the role of spin-lattice interactions on the relaxation of Mn^{+2} pairs and compare the theoretical time to the estimated experimental time (22). (Copies available exclusively from MIT Libraries, Rm. 14-0551, Cambridge, MA 02139-4307. Ph. 617-253-5668; Fax 617-253-1690.) (Abstract shortened with permission of school.).

  18. Tuning magnetic disorder in diluted magnetic semiconductors using high fields to 89 Tesla

    SciTech Connect

    Crooker, Scott A; Samarth, Nitin

    2008-01-01

    We describe recent and ongoing studies at the National High Magnetic Field Laboratory at Los Alamos using the new '100 Tesla Multi-Shot Magnet', which is presently delivering fields up to {approx}89 T during its commissioning. We discuss the first experiments performed in this magnet system, wherein the linewidth of low-temperature photoluminescence spectra was used to directly reveal the degree of magnetic alloy disorder 'seen' by excitons in single Zn{sub 0.80}Cd{sub 0.22}Mn{sub 0.08}Se quantum wells. The magnetic potential landscape in II-VI diluted magnetic semiconductors (DMS) is typically smoothed when the embedded Mn{sup 2+} spins align in an applied field. However, an important (but heretofore untested) prediction of current models of compositional disorder is that magnetic alloy fluctuations in many DMS compounds should increase again in very large magnetic fields approaching 100 T. We observed precisely this increase above {approx}70 T, in agreement with a simple model of magnetic alloy disorder.

  19. Exploration of oxide-based diluted magnetic semiconductors toward transparent spintronics

    NASA Astrophysics Data System (ADS)

    Fukumura, T.; Yamada, Y.; Toyosaki, H.; Hasegawa, T.; Koinuma, H.; Kawasaki, M.

    2004-02-01

    A review is given for the recent progress of research in the field of oxide-based diluted magnetic semiconductor (DMS), which was triggered by combinatorial discovery of transparent ferromagnet. The possible advantages of oxide semiconductor as a host of DMS are described in comparison with conventional compound semiconductors. Limits and problems for identifying novel ferromagnetic DMS are described in view of recent reports in this field. Several characterization techniques are proposed in order to eliminate unidentified ferromagnetism of oxide-based DMS unidentified ferromagnetic oxide (UFO). Perspectives and possible devices are also given.

  20. Magnetic properties of layered III-VI Diluted Magnetic Semiconductors (DMS)

    NASA Astrophysics Data System (ADS)

    Pekarek, Thomas; Miotkowski, I.; Ramdas, A. K.

    2015-03-01

    The new class of quasi-two-dimensional III-VI Diluted Magnetic Semiconductors (DMS) exhibits a rich collection of magnetic behavior. The Ga1-xMnxS system exhibits a 3-D spin-glass transition, which was unexpected given its four atom thick two dimensional structure. The best scaling fit was found for critical exponents (γ = 4.0, β = 0.8, and δ = 5.5) similar to the three dimensional Zn1-xMnxTe system. Ga1-xFexSe exhibits a prominent magnetic anisotropy over the temperature range from 10 to 400 K. Theoretical models for In1-xMnxSe, In1-xMnxS, and Ga1-xMnxS provide good agreement with experimental results over a wide range of temperatures and fields. The mechanism behind an unusually large thermal hysteresis (ΔT ~ 200 K) in In1-xMnxSe, which extends up to room temperature, is not completely understood at this time. Typically, thermal hysteresis in most materials has a ΔT ~ 20 K occurring well below room temperature. The host III-VI semiconductors themselves are among the best non-linear optical materials. This research was supported by the UNF Terry Presidential Professorship, the Florida Space Grant Consortium, A Purdue U. Academic Reinvestment Program, and by NSF Grant Nos. DMR-07-06593 and DMR-14-29428.

  1. Towards improved photovoltaic conversion using dilute magnetic semiconductors (abstract only)

    NASA Astrophysics Data System (ADS)

    Olsson, Pär; Guillemoles, J.-F.; Domain, C.

    2008-02-01

    Present photovoltaic devices, based on p/n junctions, are limited from first principles to maximal efficiencies of 31% (40% under full solar concentration; Shockley and Queisser 1961 J. Appl. Phys. 32 510). However, more innovative schemes may overcome the Shockley-Queisser limit since the theoretical maximal efficiency of solar energy conversion is higher than 85% (Harder and Würfel 2003 Semicond. Sci. Technol. 18 S151). To date, the only practical realization of such an innovative scheme has been multi-junction devices, which at present hold the world record for efficiency at nearly 41% at significant solar concentration (US DOE news site: http://www.energy.gov/news/4503.htm). It has been proposed that one could make use of the solar spectrum in much the same way as the multi-junction devices do but in a single cell, using impurity induced intermediate levels to create gaps of different sizes. This intermediate level semiconductor (ILSC) concept (Green and Wenham 1994 Appl. Phys. Lett. 65 2907; Luque and Martí1997 Phys. Rev. Lett. 78 5014) has a maximal efficiency similar to that of multi-junction devices but suffers from prohibitively large non-radiative recombination rates. We here propose to use a ferromagnetic impurity scheme in order to reduce the non-radiative recombination rates while maintaining the high theoretical maximum efficiency of the ILSC scheme, that is about 46%. Using density functional theory calculations, the electronic and energetic properties of transition metal impurities for a wide range of semiconductors have been analysed. Of the several hundred compounds studied, only a few fulfil the design criteria that we present here. As an example, wide gap AlP is one of the most promising compounds. It was found that inclusion of significant amounts of Mn in AlP induces band structures providing conversion efficiencies potentially close to the theoretical maximum, with an estimated Curie temperature reaching above 100 K.

  2. Degree of circular polarization in II-VI diluted magnetic semiconductor quantum dots

    NASA Astrophysics Data System (ADS)

    Rana, Shivani; Sen, Pratima; Sen, Pranay Kumar

    2012-07-01

    Degree of circular polarization (DCP) in II-VI diluted magnetic semiconductor quantum dots (QDs) has been studied analytically. Energy levels have been calculated using Luttinger-Kohn Hamiltonian and effective mass approximation. Effects due to application of externa magnetic field have been investigated, followed by calculation of transition dipole moment and DCP. Numerical estimates made for Mn-doped CdSe/ZnSe QDs show that DCP in undoped QDs is negligible while transition metal ion doping yields substantial polarization rotation (≈-2.20%) even at moderate magnetic fields (≈0.5T).

  3. Development of novel III-nitride-based dilute magnetic semiconductors for application in magnetic tunnel junctions

    NASA Astrophysics Data System (ADS)

    Wu, Stephen Y.

    The advances in the synthesis and characterization of novel dilute magnetic semiconductors (DMSs), AlxCr1-xN and GaxCr 1-xN, are described. This class of materials is essential for the advancement of semiconductor-based spintronics, an emerging area that combines the functionality of both the charge and the spin degree of freedom of an electron. If this can be realized, it could possibly lead to a new class of devices with enhanced capabilities. AlxCr1-xN and GaxCr1-xN thin films were gown by reactive molecular beam epitaxy (MBE). A thermochemistry approach was used in guiding and developing the growth of these DMSs. While an important goal was to achieve above room-temperature ferromagnetism, obtaining high crystal quality as well as maintaining its semiconducting properties is crucial for the integration of these films into devices. Under optimized conditions, the experimental data indicated that Al xCr1-xN and GaxCr1-xN exhibit ferromagnetism with Curie temperatures above 900 K, the highest Curie temperature reported to date. Although prior literature has suggested that ferromagnetism in these materials are partly due to ferromagnetic secondary phases, extensive structural characterization using x-ray diffraction and transmission electron microscopy indicate homogeneous single-phase epitaxial films. Angular-dependent channeling Rutherford backscattering spectroscopy was used to quantify the fraction of Cr atoms on substitutional, interstitial, and random lattice sites. Films grown at 775°C indicate that 90% of the Cr atoms are sitting on substitutional sites., whereas films grown at 825°C only had 17%. The effect of the Cr position in the III-N lattice was found to have a profound effect on the magnetic and electrical transport properties. The fabrication of magnetic tunnel junctions (MTJs) which utilize these DMSs were also investigated. Studies determining the feasibility of Ga xCr1-xN as a ferromagnetic electrode and AIN as a barrier material were carried

  4. Organic analogues of diluted magnetic semiconductors: bridging quantum chemistry to condensed matter physics

    NASA Astrophysics Data System (ADS)

    Furis, Madalina; Rawat, Naveen; Cherian, Judy G.; Wetherby, Anthony; Waterman, Rory; McGill, Stephen

    2015-09-01

    The selective coupling between polarized photons and electronic states in materials enables polarization-resolved spectroscopy studies of exchange interactions, spin dynamics, and collective magnetic behavior of conduction electrons in semiconductors. Here we report on Magnetic Circular Dichroism (MCD) studies of magnetic properties of electrons in crystalline thin films of small molecule organic semiconductors. Specifically, the focus was on the magnetic exchange interaction properties of d-shell ions (Cu2+, Co2+ and Mn2+) metal phthalocyanine (Pc) thin films that one may think of as organic analogues of diluted magnetic semiconductors (DMS). These films were deposited in-house using a recently developed pen-writing method that results in crystalline films with macroscopic long range ordering and improved electronic properties, ideally suited for spectroscopy techniques. Our experiments reveal that, in analogy to DMS, the extended π-orbitals of the Pc molecule mediate the spin exchange between highly localized d-like unpaired spins. We established that exchange mechanisms involve different electronic states in each species and/or hybridization between d-like orbitals and certain delocalized π-orbitals. Unprecedented 25T MCD and PL conducted in the unique 25T Split Florida HELIX magnet at the National High Magnetic Field Laboratory (NHMFL) will prove useful in probing these exchange interactions.

  5. Experimental studies of spin dependent phenomena in giant magnetoresistance (GMR) and dilute magnetic semiconductor (DMS) systems

    NASA Astrophysics Data System (ADS)

    Theodoropoulou, Nikoleta

    The dissertation consists of two research subjects; Giant Magnetoresistance (GMR) and Dilute Magnetic Semiconductors (DMS). Their common thread is the electronic spin. Both of these subjects are important components of the field of spintronics. In the first GMR study, using temperature-dependent magnetoresistance and magnetization measurements on Fe/Cr multilayers, we identified hysteretic and time-dependent behavior that denotes the presence of a glassy antiferromagnetic (GAF) phase. Pronounced irreversible behavior with logarithmic time dependence manifests itself below an identified "de Almeida and Thouless" (AT) line and confirms the important role of an underlying disordered magnetic domain structure stemming from inter- and intralayer dipolar couplings. Our identification of a field-independent spin-glass temperature associated with this GAF phase sets an energy scale (140K) below which interlayer exchange coupling (IEC) dominates. At room temperature, where the GMR effect is still robust, IEC plays only a minor role in forcing the antiparallel interlayer domain orientations that give rise to the high resistance state in zero magnetic fields. In the DMS study, by using the method of ion implantation to incorporate magnetic ions into a variety of semiconducting substrates, we investigated the nature of magnetism in magnetic semiconductor systems. The magnetic ions Mn, Fe, and Ni were implanted into each of the epitaxially grown semiconductors GaN, GaP, and SiC to achieve volume concentrations between 1 and 5 atomic %. The implanted samples were examined with both x-ray diffraction (XRD) and transmission electron microscopy (TEM) to characterize their microstructure (in most cases, no secondary phases were found) and with SQUID magnetometry to determine their magnetic properties (hysteresis, coercive fields, and differences between field-cooled (FC) and zero-field cooled (ZFC) magnetizations). We discovered room temperature ferromagnetism in p-GaP: C with high

  6. Direct probing of band-structure Berry phase in diluted magnetic semiconductors

    NASA Astrophysics Data System (ADS)

    Granada, M.; Lucot, D.; Giraud, R.; Lemaître, A.; Ulysse, C.; Waintal, X.; Faini, G.

    2015-06-01

    We report on experimental evidence of the Berry phase accumulated by the charge-carrier wave function in single-domain nanowires made from a (Ga, Mn)(As, P) diluted ferromagnetic semiconductor layer. Its signature on the mesoscopic transport measurements is revealed as unusual patterns in the magnetoconductance that are clearly distinguished from the universal conductance fluctuations. We show that these patterns appear in a magnetic field region where the magnetization rotates coherently and are related to a change in the band-structure Berry phase as the magnetization direction changes. They should thus be considered a band-structure Berry phase fingerprint of the effective magnetic monopoles in the momentum space. We argue that this is an efficient method to vary the band structure in a controlled way and to probe it directly. Hence, (Ga, Mn)As appears to be a very interesting test bench for new concepts based on this geometrical phase.

  7. Preparation of dilute magnetic semiconductor films by metalorganic chemical vapor deposition

    NASA Technical Reports Server (NTRS)

    Nouhi, Akbar (Inventor); Stirn, Richard J. (Inventor)

    1990-01-01

    A method for preparation of a dilute magnetic semiconductor (DMS) film is provided, wherein a Group II metal source, a Group VI metal source and a transition metal magnetic ion source are pyrolyzed in the reactor of a metalorganic chemical vapor deposition (MOCVD) system by contact with a heated substrate. As an example, the preparation of films of Cd.sub.1-x Mn.sub.x Te, wherein 0.ltoreq..times..ltoreq.0.7, on suitable substrates (e.g., GaAs) is described. As a source of manganese, tricarbonyl (methylcyclopentadienyl) maganese (TCPMn) is employed. To prevent TCPMn condensation during the introduction thereof int the reactor, the gas lines, valves and reactor tubes are heated. A thin-film solar cell of n-i-p structure, wherein the i-type layer comprises a DMS, is also described; the i-type layer is suitably prepared by MOCVD.

  8. Curie temperatures of cubic (Ga, Mn)N diluted magnetic semiconductors from the RKKY spin model.

    PubMed

    Zhu, Li-Fang; Liu, Bang-Gui

    2009-11-01

    We explore how much the RKKY spin interaction can contribute to the high-temperature ferromagnetism in cubic (Ga, Mn)N diluted magnetic semiconductors. The usual coupling constant is used and effective carriers are considered independent of doped magnetic atoms, as is shown experimentally. Our Monte Carlo simulated results show that maximal Curie temperature is reached at the optimal carrier concentration for a given Mn concentration, equaling 373 K for 5% Mn and 703 K for 8% Mn. Because such a Monte Carlo method does not overestimate transition temperatures, these calculations indicate that the RKKY spin interaction alone can yield high-enough Curie temperatures in cubic (Ga, Mn)N under optimized conditions.

  9. Magnetic Interactions in the Diluted Magnetic Semiconductor Mn_xGe_1-x

    NASA Astrophysics Data System (ADS)

    Erwin, Steven C.; Hellberg, C. Stephen

    2001-03-01

    Much current debate has focused on the origins of ferromagnetism in III-V magnetic semiconductors. Less attention has been paid to magnetically doped Group-IV semiconductors, although they have been predicted to have Curie temperatures of the same order [1]. We use density-functional theoretical (DFT) methods to study the electronic structure and magnetic interactions in Mn_xGe_1-x, the first such elemental magnetic semiconductor to be realized experimentally [2]. We use ordered supercells to simulate 6% Mn concentration, and calculate total energies within DFT for a variety of positional and magnetic arrangements of Mn at fixed concentration. We then fit these energies to a Heisenberg model to extract the spin coupling constants. The result is a strong but very short-ranged antiferromagnetic interaction between Mn atoms, and a weaker but longer-ranged ferromagnetic interaction. The ferromagnetic interaction dominates at all Mn-Mn distances beyond nearest neighbor. [1] T. Dietl et al., Science 287, 1019 (2000). [2] Y.D. Park, J. Mattson, A. Hanbicki, and B. Jonker (unpublished).

  10. Stabilization of Ferromagnetic States by Electron Doping in ZnO-Based Diluted Magnetic Semiconductors

    NASA Astrophysics Data System (ADS)

    Sato, Kazunori; Katayama-Yoshida, Hiroshi

    2001-03-01

    In order to investigate functionality of ZnO as a diluted magnetic semiconductor (DMS), we had studied the magnetism in ZnO doped with 3d transition metal atoms (TM) and showed that it was also a candidate for a new functional magnetic material [1]. In this paper, we develop our previous work and give detailed materials design with ZnO-based DMS based on ab initio calculations. The electronic structure of a TM-doped ZnO was calculated within the local density approximation by the Korringa-Kohn-Rostoker method combined with the coherent potential approximation. Total energies of Zn_1-xTM^\\uparrow_xO and Zn_1-xTM^\\uparrow_x/2TM^downarrow_x/2O, where up and down arrows mean the directions of respective atomic magnetic moments, were compared and appearance of the ferromagnetism was discussed. Effects of carrier doping to these systems were also considered. It was found that their magnetic states were controllable by changing the carrier density. In particular, ferromagnetic states were stabilized by electron doping in the case of Fe, Co or Ni doped ZnO. From the point of practical applications, it is favorable feature to realize high Curie temperature ferromagnet, because n-type ZnO is easily available. [1] K. Sato and H. Katayama-Yoshida, Jpn. J. Appl. Phys. 39 (2000) L555.

  11. Novel photoinduced phase transitions in transition metal oxides and diluted magnetic semiconductors

    PubMed Central

    2012-01-01

    Some transition metal oxides have frustrated electronic states under multiphase competition due to strongly correlated d electrons with spin, charge, and orbital degrees of freedom and exhibit drastic responses to external stimuli such as optical excitation. Here, we present photoemission studies on Pr0.55(Ca1 − ySry)0.45MnO3 (y = 0.25), SrTiO3, and Ti1 − xCoxO2 (x = 0.05, 0.10) under laser illumination and discuss electronic structural changes induced by optical excitation in these strongly correlated oxides. We discuss the novel photoinduced phase transitions in these transition metal oxides and diluted magnetic semiconductors on the basis of polaronic pictures such as orbital, ferromagnetic, and ferroelectric polarons. PMID:23092248

  12. Spin dependent transport in diluted magnetic semiconductor/superconductor tunnel junctions

    NASA Astrophysics Data System (ADS)

    Shokri, A. A.; Negarestani, S.

    2014-12-01

    A modification of Blonder-Tinkham-Klapwijk (BTK) model is proposed to describe transport properties of diluted magnetic semiconductor (DMS)/superconductor(SC)/DMS double tunneling junctions. Coherent spin-polarized transport is studied by taking into account the Andreev reflection on spatial variation of SC barrier parameters in the heterostructure. It is shown that the conductance spectrum exhibits an oscillatory behavior with quasi-particle energy, and the oscillation amplitude is reduced with increasing temperature. We also examine the dependence of tunneling magnetoresistance (TMR) on the barrier strength (κ) and spin polarization (P) of two DMS layers. Our results show that TMR decreases with increasing temperature and barrier strength, which may be useful in designing the nano spin-valve devices based on DMS and SC materials.

  13. The Effects of Inversion Asymmetry on Diluted Magnetic Semiconductors with the Zincblende Structure.

    NASA Astrophysics Data System (ADS)

    Nobel, Jan Alan

    The energy bands of a zincblende structure semiconductor in a magnetic field are modelled. The model is used to investigate the effects of the standard k cdot p parameters with exchange included on the energy bands of Hg_{rm 1-x}Mn _{rm x}Te and Hg _{rm 1-x}Mn _{rm x}Se in a magnetic field. The various parameters for the model are studied and the most influential parameters determined. The effect of these parameters on the periodicity, in inverse magnetic field, of the crossing of the Fermi energy with the magnetic energy bands is examined. The resulting periodicity is compared to experimental values determined from Shubnikov-de Hass (ShdH) data to verify that the presently accepted values of the standard parameters do reproduce this periodicity. The model also includes the parameters normally neglected in the standard k cdot p treatment, specifically one warping and four inversion asymmetry parameters (IAPs). The IAPs and warping are examined using 408 x 408 k cdot p matrices. This allows us to study the effects of the four IAPs individually as well as collectively on the ShdH oscillations in Hg_{0.975}Mn _{0.025}Se over the temperature range 1.40 K to 3.40 K. From this process, we are able to determine a new set of exchange parameters, alpha and beta, and for the first time, a set of inversion asymmetry parameters which demonstrate the temperature dependence of the ShdH oscillations in diluted magnetic semiconductors. We use this new set of parameters to determine the small k-space band structure, the Fermi surface, and the k_{rm z} effective mass ratio as a function of field for Hg_ {0.975}Mn_{0.025} Se. We further use these IAPs to calculate the semimetal to semiconductor transition, cyclotron mass ratios and effective Lande g-factors for Hg_{0.975 }Mn_{0.025}Se, Hg_{0.95}Mn_ {0.05}Te, and Hg_{0.94 }Mn_{0.06}Te. For Hg_{0.95}Mn_ {0.05}Te the calculated magnetic energy bands using IAPs are used to study the resulting ShdH frequencies at different Fermi energies

  14. Materials design of dilute magnetic semiconductors based on the control of spinodal decomposition

    NASA Astrophysics Data System (ADS)

    Sato, Kazunori

    2010-03-01

    Recently, spinodal decomposition phenomena attract much attention in the fabrication of dilute magnetic semiconductors (DMS). Many experimental results indicate that the magnetic properties of DMS are strongly affected by the occurrence of spinodal decomposition [1], thus people are now interested in controlling the magnetic properties of DMS by tuning the spinodal decomposition. In this talk, I will discuss spinodal decomposition in DMS based on the first-principles calculation. The electronic structure of DMS is calculated by using the Korringa-Kohn-Rostoker coherent potential approximation method. Based on the calculated mixing energy I will discuss phase diagrams of DMS systems and their chemical trends. By using the calculated chemical pair interactions between magnetic impurities in DMS, the self-organization of nano-structures in DMS of the nano-structures are simulated by using the Monte Carlo method. The simulation results indicate that we can control super-paramagnetic blocking temperature by optimizing the size of the nano-structures by changing the crystal growth condition [2]. Next, I will propose co-doping method to control solubility limit of magnetic impurities in DMS. From the total energy calculations, it is shown that the solubility of magnetic impurities is strongly enhanced under the existence of interstitial donors [2]. However, due to the compensation of holes by the co-dopants, the ferromagnetism is suppressed. Based on the kinetic Monte Carlo simulations, we propose low temperature annealing method to remove interstitial co-dopants for recovering the ferromagnetism. By combining the co-doping and the low temperature annealing, we can fabricate DMS with high concentration of magnetic impurities which should show high-Tc. This work is based on the collaboration with H. Fujii, L. Bergqvist, P. H. Dederichs and H. Katayama-Yoshida.[4pt] [1] A. Bonanni, Semicond. Sci. Technol. 22 (2007) R41.[0pt] [2] K. Sato et al., Rev. Mod. Phys. Phys

  15. MnxGe1-x dilute magnetic semiconductor studied by XAFS

    NASA Astrophysics Data System (ADS)

    Ye, Jian; Jiang, Yong; Liu, Qinghua; Sun, Yu; Pan, Zhiyun; Wei, Shiqiang

    2009-11-01

    Fluorescence X-ray absorption fine structure (XAFS) technique was used to investigate the local structures of the doped Mn in the MnxGe1-x dilute magnetic semiconductors (DMSs) with different Mn content (x=0.07, 0.25, 0.36) prepared by magnetron cosputtering method. The results indicate that for the sample with low Mn content (x=0.07), the Mn atoms are mainly incorporated into the lattice of Ge, and locate at the substitutional sites of Ge atoms with the ratio of 75%. With the Mn content increasing to 0.25 or higher, only part of Mn atoms enter the lattice of Ge and the others exist in the form of the Mn5Ge3 phase whose content increases with the doped Mn concentration. It is found that, in the Mn0.07Ge0.93 the bond length of the first (Mn-Ge) shell is RMn-Ge = 2.50 Å, which is bigger than the first (Ge-Ge) shell distance in Ge by about 0.05 Å. These results imply that local structure expansion is induced by dilute Mn substituting into Ge sites.

  16. Exploration of the new class of layered III-VI Diluted Magnetic Semiconductors (DMS)

    NASA Astrophysics Data System (ADS)

    Pekarek, Thomas; Miotkowski, I.; Ramdas, A. K.

    2014-03-01

    We have explored a new class of quasi-two-dimensional III-VI Diluted Magnetic Semiconductors (DMS) exhibiting a wide range of magnetic behavior. Several are good candidates for potential device applications. In In1-xMnxSe, we found a remarkably large thermal hysteresis (Delta T is approximately 200 K) extending up to room temperature. This is an important material because a typical thermal hysteresis in most materials has a Delta T approximately 20 K occurring well below room temperature. The thermal hysteresis is also seen in transport measurements for In1-xMnxSe. To date, we have found good agreement between experiment and theory for the 1st three III-VI DMS systems (In1-xMnxSe, In1-xMnxS, and Ga1-xMnxS). Ga1-xFexSe is unique amount the III-VI DMS exhibiting substantial magnetic anisotropy. In Ga1-xMnxS, we have found a spin glass transition and critical exponents (γ = 4.0, β = 0.8, and δ = 5.5) that are in agreement with the theory. We surprisingly found that the spin glass transition in the 2-D IIIVI DMS similar to spin glass in 3-D II-VI DMS. [This research was supported by the UNF Terry Presidential Professorship, a Purdue University Academic Reinvestment Program and by the National Science Foundation (NSF) Grant Nos. DMR-07-06593 and DMR-04-05082.

  17. Unraveling the nature of carrier-mediated ferromagnetism in diluted magnetic semiconductors

    NASA Astrophysics Data System (ADS)

    Bouzerar, Georges; Bouzerar, Richard

    2015-10-01

    After more than a decade of intensive research in the field of diluted magnetic semiconductors (DMS), the nature and origin of ferromagnetism, especially in III-V compounds, is still controversial. Many questions and open issues are under intensive debates. Why after so many years of investigations, Mn-doped GaAs remains the candidate with the highest Curie temperature among the broad family of III-V materials doped with transition metal (TM) impurities? How can one understand that these temperatures are almost two orders of magnitude larger than that of hole-doped (Zn,Mn)Te or (Cd,Mn)Se? Is there any intrinsic limitation or is there any hope to reach room-temperature ferromagnetism in the dilute regime? How can one explain the proximity of (Ga,Mn)As to the metal-insulator transition and the change from Ruderman-Kittel-Kasuya-Yosida (RKKY) couplings in II-VI compounds to double-exchange type in (Ga,Mn)N? In spite of the great success of density functional theory-based studies to provide accurately the critical temperatures in various compounds, till very lately a theory that provides a coherent picture and understanding of the underlying physics was still missing. Recently, within a minimal model, it has been possible to show that among the physical parameters, the key one is the position of the TM acceptor level. By tuning the value of that parameter, one is able to explain quantitatively both magnetic and transport properties in a broad family of DMS. We will see that this minimal model explains in particular the RKKY nature of the exchange in (Zn,Mn)Te/(Cd,Mn)Te and the double exchange type in (Ga,Mn)N and simultaneously the reason why (Ga,Mn)As exhibits the highest critical temperature among both II-VI and III-V DMS's. xml:lang="fr"

  18. Local atomic and magnetic structure of dilute magnetic semiconductor (Ba ,K ) (Zn,Mn ) 2As2

    NASA Astrophysics Data System (ADS)

    Frandsen, Benjamin A.; Gong, Zizhou; Terban, Maxwell W.; Banerjee, Soham; Chen, Bijuan; Jin, Changqing; Feygenson, Mikhail; Uemura, Yasutomo J.; Billinge, Simon J. L.

    2016-09-01

    We have studied the atomic and magnetic structure of the dilute ferromagnetic semiconductor system (Ba ,K )(Zn ,Mn )2As2 through atomic and magnetic pair distribution function analysis of temperature-dependent x-ray and neutron total scattering data. We detected a change in curvature of the temperature-dependent unit cell volume of the average tetragonal crystallographic structure at a temperature coinciding with the onset of ferromagnetic order. We also observed the existence of a well-defined local orthorhombic structure on a short length scale of ≲5 Å , resulting in a rather asymmetrical local environment of the Mn and As ions. Finally, the magnetic PDF revealed ferromagnetic alignment of Mn spins along the crystallographic c axis, with robust nearest-neighbor ferromagnetic correlations that exist even above the ferromagnetic ordering temperature. We discuss these results in the context of other experiments and theoretical studies on this system.

  19. Generation of diluted magnetic semiconductor nanostructures by pulsed laser ablation in liquid

    NASA Astrophysics Data System (ADS)

    Savchuk, Ol. A.; Savchuk, A. I.; Stolyarchuk, I. D.; Tkachuk, P. M.; Garasym, V. I.

    2015-11-01

    Results of study of two members of diluted magnetic semiconductor (DMS) family, namely Cd1-xMnxTe and Zn1-xMnxO, which are in form of micro- and nanoparticles generated by pulsed laser ablation in liquid medium (PLAL), have been presented. The structural analysis using X-ray diffraction (XRD) of nanocrystals indicated that Mn has entered the AIIBVI lattice without changing the crystal structure and systematically substituted the A2+ ions in the lattice. Atomic force microscopy (AFM) gives information about surface morphology of the formed nanostructures. The scanning electron microscopy (SEM) clearly illustrates flower-like particles of Zn1-xMnxO, which consist of nanosheets and nanoleaves with average thickness about (5-8) nm. Obviously, these nanoobjects are responsible for the observed blue shift of the absorption edge in DMS nanostructures. In magneto-optical Faraday rotation spectra of both Cd1-xMnxTe and Zn1-xMnxO nanostructures there were exhibited peculiarities associated with s,p-d spin exchange interactions and confinement effect. It was observed almost linear dependence of the Faraday rotation as function of magnetic field strength for nanoparticles in contrast to the dependence with saturation in bulk case.

  20. Study of the new diluted magnetic semiconductors based on the doping of iron-based superconductors

    NASA Astrophysics Data System (ADS)

    Zhang, Li; Feng, Shan; Li, Linxian; Wang, Shaolei; Li, Yuke

    Diluted magnetic semiconductors(DMSs) have attracted increasing attention because of their potential applications in spintronics. Recently, a series of new bulk DMS materialswere synthesized by doping in the 122 and 1111 phases of iron-based superconductors(Fe-SC), which sheds light on the DMS research[3]. In this report, we have synthesized two systems of 1111 phases of DMSs based on Fe-SC materials (La1-xSrx) (Ag0.925 Mn0.075) SO(x =0, 0.025, 0.05, 0.075 and 0.1) and (Y1-xSrx) (Cu0.925 Mn0.075) SO (x =0, 0.025, 0.05,0.075 and 0.1) by solid state method. The structure and electrical, magnetic and optical properties have been investigated by means of XRD, 4KCCS, MPMS, PL, UV-Vis and Raman technique, respectively. Some interesting phenomena are found (Such as the Curie temperature Tc and band-gap energy Eg change regularly with the dopants additon). The results are helpful to clarify the intrinsic mechanism of the DMSs, and will provide new insights on the fabrication and application of devices based on these materials. This work was supported by the National Science Foundation of China (Grant No 61376094). Li Zhang would like to acknowledge a scholarship Granted by China Scholarship Council (CSC-201408330028)

  1. Preparation of dilute magnetic semiconductor films by metalorganic chemical vapor deposition

    NASA Technical Reports Server (NTRS)

    Nouhi, Akbar (Inventor); Stirn, Richard J. (Inventor)

    1988-01-01

    A method for preparation of a dilute magnetic semiconductor (DMS) film is provided, in which a Group II metal source, a Group VI metal source and a transition metal magnetic ion source are pyrolyzed in the reactor of a metalorganic chemical vapor deposition (MOCVD) system by contact with a heated substrate. As an example, the preparation of films of Cd(sub 1-x)Mn(sub x)Te, in which 0 is less than or equal to x less than or equal to 0.7, on suitable substrates (e.g., GaAs) is described. As a source of manganese, tricarbonyl (methylcyclopentadienyl) manganese (TCPMn) is employed. To prevent TCPMn condensation during its introduction into the reactor, the gas lines, valves and reactor tubes are heated. A thin-film solar cell of n-i-p structure, in which the i-type layer comprises a DMS, is also described; the i-type layer is suitably prepared by MOCVD.

  2. First-Principles Study on Electronic Structure of TiO2-Based Dilute Magnetic Semiconductors

    NASA Astrophysics Data System (ADS)

    Kizaki, Hidetoshi; Toyoda, Masayuki; Sato, Kazunori; Katayama-Yoshida, Hiroshi

    2008-03-01

    We investigate the electronic structure in rutile-TiO2-based dilute magnetic semiconductors (DMS) within self-interaction- corrected local density approximation (SIC-LDA). These results are compared with those calculated within standard LDA. Although the calculated band-gap energy and energetic position of Ti 3d bands are different in the LDA and the SIC-LDA, half-metallic density of states is predicted in transition- metal-doped TiO2 for both methods. While the LDA calculations predict high-spin state only for Fe-doped one, in the SIC-LDA calculations high-spin state is realized in V-, Cr- and Mn-doped one and low-spin state is realized in Fe- and Co- doped one. However, the absorption and soft x-ray magnetic circular dichroism measurements in (Ti0.97, Co0.03)O2-δ indicate the Co^2+ high-spin state in the D2h-symmetry crystal field at the Ti site. These experimental results do not agree with our calculated results. We will discuss the origin of the discrepancy between the theoretical predictions and the experimental observations. In addition, we will discuss the ferromagnetism in TiO2-based DMS.

  3. Ultrafast spin dynamics in II-VI diluted magnetic semiconductors with spin-orbit interaction

    NASA Astrophysics Data System (ADS)

    Ungar, F.; Cygorek, M.; Tamborenea, P. I.; Axt, V. M.

    2015-05-01

    We study theoretically the ultrafast spin dynamics of II-VI diluted magnetic semiconductors in the presence of spin-orbit interaction. Our goal is to explore the interplay or competition between the exchange sd coupling and the spin-orbit interaction in both bulk and quantum-well systems. For bulk materials we concentrate on Zn1 -xMnxSe and take into account the Dresselhaus interaction, while for quantum wells we examine Hg1 -x -yMnxCdyTe systems with a strong Rashba coupling. Our calculations were performed with a recently developed formalism which incorporates electronic correlations beyond mean-field theory originating from the exchange sd coupling. For both bulk and quasi-two-dimensional systems we find that, by varying the system parameters within realistic ranges, either of the two interactions can be chosen to play a dominant role or they can compete on an equal footing with each other. The most notable effect of the spin-orbit interaction in both types of system is the appearance of strong oscillations where the exchange sd coupling by itself causes only an exponential decay of the mean electronic spin components. The mean-field approximation is also studied and an analytical interpretation is given as to why it shows a strong suppression of the spin-orbit-induced dephasing of the spin component parallel to the Mn magnetic field.

  4. Design of dilute magnetic semiconductors with room temperature ferromagnetism by controlling spinodal decompostion

    NASA Astrophysics Data System (ADS)

    Sato, Kazunori

    2008-03-01

    Owing to the recent development of the first-principles method for calculating magnetic properties of dilute magnetic semiconductors (DMS), it has been recognized that the magnetic percolation effect is disastrous to the high temperature ferromagnetism in DMS in particular for low concentrations [1]. The exchange interactions calculated from first-principles are strong for nearest neighbors, but those interactions are short ranged and can not play an important role for realizing high- TC because the solubility of magnetic impurities into DMS is too low to achieve magnetic percolation. To overcome this difficulty and realize room temperature ferromagnetism, we focus on the spinodal decomposition in DMS, and suggest that by controlling the spinodal decomposition high blocking temperature can be realized leading to ferromagnetic behaviour at high temperature [2]. We calculate electronic structure of DMS from first-principles by using the Korringa- Kohn-Rostoker coherent potential approximation (KKR-CPA) method. Then, chemical pair interactions and magnetic exchange interactions between magnetic are calculated. We use the Monte Carlo techniques to simulate spinodal decomposition of DMS and to estimate the magnetic properties of them [3]. The computer simulations for the magnetization process of the decomposition phases indicate that we can control super-paramagnetic blocking temperature by optimizing the size of the clusters by changing the crystal growth condition. This simulation suggests the material design of high blocking temperature DMS by controlling the spinodal decomposition [2].As another approach for realizing high-Tc DMS we propose co-doping method to increase solubility limit of transition metal impurities in DMS [4]. This work is based on the collaboration with H. Katayama-Yoshida and T. Fukushima. [1] L. Bergqvist et al, Phys. Rev. Lett. 93, 137202 (2004), K. Sato et al., Phys. Rev. B 70, 201202 (2004) [2] K. Sato et al., Jpn. J. Appl. Phys. 46, L682

  5. Ab initio description of the diluted magnetic semiconductor Ga1-xMnxAs: Ferromagnetism, electronic structure, and optical response

    NASA Astrophysics Data System (ADS)

    Craco, L.; Laad, M. S.; Müller-Hartmann, E.

    2003-12-01

    Motivated by a study of various experiments describing the electronic and magnetic properties of the diluted magnetic semiconductor Ga1-xMnxAs, we investigate its physical response in detail using a combination of first-principles band structure with methods based on dynamical mean field theory to incorporate strong, dynamical correlations, and intrinsic as well as extrinsic disorder in one single theoretical picture. We show how ferromagnetism is driven by double exchange (DE), in agreement with very recent observations, along with a good quantitative description of the details of the electronic structure, as probed by scanning tunneling microscopy and optical conductivity. Our results show how ferromagnetism can be driven by DE even in diluted magnetic semiconductors with small carrier concentration.

  6. Extended coherence length of spatially oscillating electron-spin polarization in dilute-magnetic-semiconductor quantum wells

    SciTech Connect

    Tsuchiya, Takuma

    2013-12-04

    We have investigated the possibility that the coherence length of spatially oscillating electron-spin polarization is improved in dilute magnetic semiconductors. In usual nonmagnetic quantum wells, the spin polarization of the electrons injected from a ferromagnetic source electrode oscillates spatially because of the spin precession due to spin-orbit effective magnetic fields, i.e., the Rashba and Dresselhaus fields. However, the polarization is damped within an oscillation period by the D’yakonov-Perel’ spin relaxation. In paramagnetic dilute magnetic semiconductors, impurity spin polarization is induced under the electron-spin polarization, and this impurity polarization influences the electron-spin precession and possibly improves the spatial electron-spin coherence. The validity of this effect is demonstrated by a numerical simulation for a CdMnTe quantum well.

  7. An X-ray standing wave study of the diluted magnetic semiconductor Ga(Mn)As

    NASA Astrophysics Data System (ADS)

    Nemsak, Slavomir; Kuo, Cheng-Tai; Schlueter, Christoph; Gehlmann, Mathias; Lin, Shih-Chieh; Doering, Sven; Eschbach, Markus; Mlynczak, Ewa; Plucinski, Lukasz; Borek, Stephan; Minar, Jan; Ohno, Hideo; Lee, Tien-Lin; Schneider, Claus M.; Fadley, Charles S.

    We have combined the recently developed techniques of soft x-ray standing-wave angle-resolved photoemission (SW-ARPES) [Gray et al., EPL 104, 17004 (2013)] and hard x-ray ARPES (HARPES) [Gray et al., Nature Mat. 11, 957 (2012)] so as to be able to use single-crystal Bragg reflection to create the SW [Thiess et al., Sol. St. Comm. 150, 553 (2010)], thus permitting the first measurements of momentum- and element- resolved bulk electronic structure. The strengths of the SW-HARPES method are demonstrated using the dilute magnetic semiconductor Ga(1 - x)MnxAs. A strong SW is generated by Bragg reflection of ca. 3 keV x-rays from the (111) planes of both undoped GaAs and Mn-doped thin films with x=0.05. Due to the uneven occupancy of (111) planes by either Ga(Mn) or As atoms, the element-specific band structure can be obtained with a help of the SW modulation in core levels. Apart from the site specific decomposition of the electronic structure, the SW measurements also confirmed a substitutional presence of Mn atoms at the Ga sites. This technique should be applicable to a broad range of complex materials.

  8. Magnetism and Transport in the Group-IV Dilute Magnetic Semiconductor Germanium(1-x) Manganese(x)

    NASA Astrophysics Data System (ADS)

    Dolph, Melissa Ann Commisso

    Dilute magnetic semiconductors (DMS) have gained interest over the past decade because of their potential applications in spintronics. DMS systems exhibit carriermediated ferromagnetism, a property which enables electric-field control over the magnetization. In this thesis, the DMS Ge1-xMn x was studied. Germanium (Ge) is a desirable semiconductor because of its high hole mobility and its compatibility with silicon. Manganese (Mn) was chosen for its exhibition of indirect ferromagnetic coupling. These properties are deemed necessary for the realization of a magnetic quantum-dot based device such as a magnetic spin switch. Ion implantation of Mn into Ge-on-insulator and molecular beam expitaxy (MBE) were two methods utilized to synthesize the studied Ge1-x Mnx thin films. Several of the Ge1-xMn x films were treated with rapid thermal annealing (RTA) or pulsed laser melting (PLM) in an attempt to improve the crystallinity and make more of the Mn ferromagnetically active. Of all the Ge1-xMn x systems studied, those that exhibited correlated magnetic and magneto-transport properties were those with hole concentrations on the order of 1019 --1020 holes/cm3. Although these systems exhibited robust magneto-transport properties, electric-field biasing proved ineffective at modulating the carrier concentration and ultimately the magnetization as monitored by the ordinary and anomalous Hall effects and the resistivity. The inefficiency of the electric gating was attributed to localized trap states which reside in the energy band gap of the defect-plagued Ge semiconductor. If crystallinity is a prerequisite for gatability, PLM may prove useful as it was found to restore the single crystal structure damaged during Mn implantation. However, PLM resulted in an undesirable segregation of Mn toward the surface of the film (as observed by secondary ion mass spectrometry (SIMS)); a decrease in the saturation magnetization after PLM was attributed to this segregation. The information

  9. Structure and magnetic properties of Co-doped ZnO dilute magnetic semiconductors synthesized via hydrothermal method

    NASA Astrophysics Data System (ADS)

    Ghosh, K.; Kahol, P. K.; Bhamidipati, S.; Das, N.; Khanra, S.; Wanekaya, A.; Delong, R.

    2012-07-01

    Using X-Ray Diffraction, Scanning Electron Microscopy, and Superconducting Quantum Interference Device magnetometer, detailed structural, morphological, and magnetic properties are reported on undoped and cobalt doped ZnO Dilute Magnetic Semiconductors, which were prepared by the hydrothermal method. Synthesis of undoped ZnO and cobalt-doped ZnO nanorods was carried out using aqueous solutions of Zn(NO3)2ṡ6H2O, Co(C2H3OO)2ṡ4H2O, and NH4OH as hydrolytic catalyst. Samples of different sizes and shapes were synthesized by varying process parameters such as solution molarity (0.05M, 0.15M, 0.3M, 0.5M), pH of the precursors in the range 8-11, growth temperature (100°-130°C), growth time (3-6 hrs), and annealing time. Optimum synthesis parameters to grow ZnO and cobalt-doped ZnO nanorods have been obtained. These nanorods show paramagnetic-like behavior. Our results do not indicate ferromagnetism behavior, unlike reported in thin films and nanocrystalline samples. The differences are likely due to the possible role of nanoparticle size, shape, and different oxygen vacancy concentrations.

  10. Quest for the perfect dilute magnetic semiconductor: Investigation of chromium-doped gallium(III) selenide on silicon

    NASA Astrophysics Data System (ADS)

    Yitamben, Esmeralda Nelly

    The potential for spin-based electronics (spintronics) to revolutionize silicon-based device structures requires development of new magnetic materials. The optimal room temperature ferromagnetic material should be both impedance and lattice matched to silicon. We have begun studies on a new class of silicon-compatible dilute magnetic semiconductors based on transition metal (TM) doped III-VI materials. These III-VI materials are of particular physics interest due to their intrinsic vacancies, since the resulting multiple incorporation sites for the transition metal may enable separate control of magnetic and electronic doping. This dissertation demonstrates that the inclusion of the transition metal Cr into the III-VI semiconductor Ga2Se3 leads to room-temperature ferromagnetism, semiconducting electronic states, and epitaxial thin films resembling pure Ga2Se3 on Si(001). This new material is definitely compatible with silicon up to several atomic percent Cr, laying the ground-work for incorporation of Cr-doped Ga2Se3 into the ever-present silicon technology. In this work, we investigate the magnetism, chemical composition, structure, morphology and solubility limit of a possible dilute magnetic semiconductor, namely Cr-doped Ga2Se 3, using magnetometry, x-ray photoemission spectroscopy (XPS), x-ray absorption fine structure (XAFS), scanning tunneling microscopy (STM), and scanning Auger microscopy (SAM). The ferromagnetism observed in this system could be linked to Cr occupying an octahedral site in a zincblende structure, as revealed by photoemission and XAFS. There is a strong correlation between the magnetism observed, the surface morphology and film thickness. We propose that this ferromagnetism is ultimately mediated by the presence of intrinsic vacancies within the zincblende Ga2Se3 structure, where the presence of a Cr in a locally-octahedral structure only happens because of vacancies, and the Cr-induced states at the top of the valence band overlap the Se

  11. Large positive magnetoresistance effects in the dilute magnetic semiconductor (Zn,Mn)Se in the regime of electron hopping

    SciTech Connect

    Jansson, F. Wiemer, M.; Gebhard, F.; Baranovskii, S. D.; Nenashev, A. V.; Petznick, S.; Klar, P. J.; Hetterich, M.

    2014-08-28

    Magnetoresistance in dilute magnetic semiconductors is studied in the hopping transport regime. Measurements performed on Cl-doped Zn{sub 1–x}Mn{sub x}Se with x < 8% are compared with simulation results obtained by a hopping transport model. The energy levels of the Cl donors are affected by the magnetization of Mn atoms in their vicinity via the s-d exchange interaction. Compositional disorder, in particular, the random distribution of magnetic atoms, leads to a magnetic-field induced broadening of the donor energy distribution. As the energy distribution broadens, the electron transport is hindered and a large positive contribution to the magnetoresistance arises. This broadening of the donor energy distribution is largely sufficient to account for the experimentally observed magnetoresistance effects in n-type (Zn,Mn)Se with donor concentrations below the metal–insulator transition.

  12. Robust Manipulation of Magnetism in Dilute Magnetic Semiconductor (Ga,Mn)As by Organic Molecules.

    PubMed

    Wang, Xiaolei; Wang, Hailong; Pan, Dong; Keiper, Timothy; Li, Lixia; Yu, Xuezhe; Lu, Jun; Lochner, Eric; von Molnár, Stephan; Xiong, Peng; Zhao, Jianhua

    2015-12-22

    Surface adsorption of organic molecules provides a new method for the robust manipulation of ferromagnetism in (Ga,Mn)As. Electron acceptor and donor molecules yield significant enhancement and suppression, respectively, of ferromagnetism with modulation of the Curie temperature spanning 36 K. Dip-pen nanolithography is employed to directly pattern monolayers on (Ga,Mn)As, which is presented as a novel pathway toward producing magnetic nanostructures.

  13. Anomalous hall effect in the (in,mn)sb dilute magnetic semiconductor.

    PubMed

    Mihály, G; Csontos, M; Bordács, S; Kézsmárki, I; Wojtowicz, T; Liu, X; Jankó, B; Furdyna, J K

    2008-03-14

    High magnetic field study of Hall resistivity in the ferromagnetic phase of (In,Mn)Sb allows one to separate its normal and anomalous components. We show that the anomalous Hall term is not proportional to the magnetization, and that it even changes sign as a function of magnetic field. We also show that the application of pressure modifies the scattering process, but does not influence the Hall effect. These observations suggest that the anomalous Hall effect in (In,Mn)Sb is an intrinsic property and supports the application of the Berry phase theory for (III,Mn)V semiconductors. We propose a phenomenological description of the anomalous Hall conductivity, based on a field-dependent relative shift of the heavy- and light-hole valence bands and the split-off band.

  14. The origin of ferromagnetic interaction between bound magnetic polarons in diluted magnetic semiconductors: A minimal model

    NASA Astrophysics Data System (ADS)

    Bednarski, Henryk

    2014-01-01

    We present a detailed analysis of the role of various interaction mechanisms contributing to the bound magnetic polaron (BMP) molecule Hamiltonian with the purpose of gaining an insight into the origin of the ferromagnetic interaction between BMPs. Explicitly, it appears that the BMP molecule Hamiltonian without interatomic direct exchange interaction does not lead to appearance of the parallel alignment of polaronic clouds in the lowest energy state even for large magnitudes of the polaronic exchange fields (up to ~65 meV in Cd0.95Mn0.05Se). Also, it appears that for the range of moderate values of polaronic exchange fields (16-25 meV in Cd0.95Mn0.05Se), the regular Hubbard BMP pair Hamiltonian must be supplemented with the direct interatomic (Heisenberg) exchange interaction to form a minimal model Hamiltonian of BMP molecule with the parallel alignment of the polaronic clouds in the lowest energy state.

  15. Magnetic field induced optical gain in a dilute nitride quaternary semiconductor quantum dot

    NASA Astrophysics Data System (ADS)

    Mageshwari, P. Uma; Peter, A. John; Lee, Chang Woo

    2016-10-01

    Effects of magnetic field strength on the electronic and optical properties are brought out in a Ga0.661In0.339N0.0554As0.9446/GaAs quantum dot for the applications of desired wavelength in opto-electronic devices. The band alignment is obtained using band anticrossing model and the model solid theory. The magnetic field dependent electron-heavy hole transition energies with the dot radius in a GaInNAs/GaAs quantum dot are investigated. The magnetic field induced oscillator strength as a function of dot radius is studied. The resonant peak values of optical absorption coefficients and the changes of refractive index with the application of magnetic field strength in a GaInNAs/GaAs quantum dot are obtained. The magnetic field induced threshold current density and the maximum optical gain are found in a GaInNAs/GaAs quantum dot. The results show that the optimum wavelength for fibre optical communication networks can be obtained with the variation of applied magnetic field strength and the outcomes may be useful for the design of efficient lasers based on the group III-N-V semiconductors.

  16. A sensitive and label-free photoelectrochemical aptasensor using Co-doped ZnO diluted magnetic semiconductor nanoparticles.

    PubMed

    Li, Hongbo; Qiao, Yunfei; Li, Jing; Fang, Hailin; Fan, Dahe; Wang, Wei

    2016-03-15

    Co-doped ZnO diluted magnetic semiconductor as a novel photoelectric beacon was first constructed for photoelectrochemical (PEC) aptasensor of acetamiprid. The fabricated PEC sensing is based on the specific binding of acetamiprid and its aptamer, which induces the decreasement of enhanced photocurrent produced by the electron donor of quercetin. Co(2+) doping has a beneficial effect in extending the band width of light absorption of ZnO into the visible region and to promote the separation of the photoinduced carriers due to the sp-d exchange interactions existing between the band electrons and the localized d electrons of Co(2+). The fabricated aptasensor was linear with the concentration of acetamiprid in the range of 0.5-800 nmolL(-1) with the detection limit of 0.18 nmolL(-1). The presence of same concentration of other conventional pesticides did not interfere in the detection of acetamiprid and the recovery is between 96.2% and 103.7%. This novel PEC aptasensor has good performances with high sensitivity, good selectivity, low cost and portable features. The strategy of Co-doped ZnO diluted magnetic semiconductor paves a new way to improve the performances of PEC aptasensor.

  17. A sensitive and label-free photoelectrochemical aptasensor using Co-doped ZnO diluted magnetic semiconductor nanoparticles.

    PubMed

    Li, Hongbo; Qiao, Yunfei; Li, Jing; Fang, Hailin; Fan, Dahe; Wang, Wei

    2016-03-15

    Co-doped ZnO diluted magnetic semiconductor as a novel photoelectric beacon was first constructed for photoelectrochemical (PEC) aptasensor of acetamiprid. The fabricated PEC sensing is based on the specific binding of acetamiprid and its aptamer, which induces the decreasement of enhanced photocurrent produced by the electron donor of quercetin. Co(2+) doping has a beneficial effect in extending the band width of light absorption of ZnO into the visible region and to promote the separation of the photoinduced carriers due to the sp-d exchange interactions existing between the band electrons and the localized d electrons of Co(2+). The fabricated aptasensor was linear with the concentration of acetamiprid in the range of 0.5-800 nmolL(-1) with the detection limit of 0.18 nmolL(-1). The presence of same concentration of other conventional pesticides did not interfere in the detection of acetamiprid and the recovery is between 96.2% and 103.7%. This novel PEC aptasensor has good performances with high sensitivity, good selectivity, low cost and portable features. The strategy of Co-doped ZnO diluted magnetic semiconductor paves a new way to improve the performances of PEC aptasensor. PMID:26436325

  18. Structural, optical, magnetic and photocatalytic properties of Co doped CuS diluted magnetic semiconductor nanoparticles

    NASA Astrophysics Data System (ADS)

    Sreelekha, N.; Subramanyam, K.; Amaranatha Reddy, D.; Murali, G.; Ramu, S.; Rahul Varma, K.; Vijayalakshmi, R. P.

    2016-08-01

    Pristine and Co doped covellite CuS nanoparticles were synthesized in aqueous solution by facile chemical co-precipitation method with Ethylene Diamine Tetra Acetic Acid (EDTA) as a stabilizing agent. EDAX measurements confirmed the presence of Co in the CuS host lattice. Hexagonal crystal structure of pure and Co doped CuS nanoparticles were authenticated by XRD patterns. TEM images indicated that sphere-shape of nanoparticles through a size ranging from 5 to 8 nm. The optical absorption edge moved to higher energies with increase in Co concentration as indicated by UV-vis spectroscopy. Magnetic measurements revealed that bare CuS sample show sign of diamagnetic character where as in Co doped nanoparticles augmentation of room temperature ferromagnetism was observed with increasing doping precursor concentrations. Photocatalytic performance of the pure and Co doped CuS nanoparticles were assessed by evaluating the degradation rate of rhodamine B solution under sun light irradiation. The 5% Co doped CuS nanoparticles provide evidence for high-quality photocatalytic activity.

  19. Structural stability at high pressure, electronic, and magnetic properties of BaFZnAs: A new candidate of host material of diluted magnetic semiconductors

    NASA Astrophysics Data System (ADS)

    Bi-Juan, Chen; Zheng, Deng; Xian-Cheng, Wang; Shao-Min, Feng; Zhen, Yuan; Si-Jia, Zhang; Qing-Qing, Liu; Chang-Qing, Jin

    2016-07-01

    The layered semiconductor BaFZnAs with the tetragonal ZrCuSiAs-type structure has been successfully synthesized. Both the in-situ high-pressure synchrotron x-ray diffraction and the high-pressure Raman scattering measurements demonstrate that the structure of BaFZnAs is stable under pressure up to 17.5 GPa at room temperature. The resistivity and the magnetic susceptibility data show that BaFZnAs is a non-magnetic semiconductor. BaFZnAs is recommended as a candidate of the host material of diluted magnetic semiconductor. Project supported by the National Natural Science Foundation of China and Project of Ministry of Science and Technology of China.

  20. First principles study of Fe in diamond: A diamond-based half metallic dilute magnetic semiconductor

    SciTech Connect

    Benecha, E. M.; Lombardi, E. B.

    2013-12-14

    Half-metallic ferromagnetic ordering in semiconductors, essential in the emerging field of spintronics for injection and transport of highly spin polarised currents, has up to now been considered mainly in III–V and II–VI materials. However, low Curie temperatures have limited implementation in room temperature device applications. We report ab initio Density Functional Theory calculations on the properties of Fe in diamond, considering the effects of lattice site, charge state, and Fermi level position. We show that the lattice sites and induced magnetic moments of Fe in diamond depend strongly on the Fermi level position and type of diamond co-doping, with Fe being energetically most favorable at the substitutional site in p-type and intrinsic diamond, while it is most stable at a divacancy site in n-type diamond. Fe induces spin polarized bands in the band gap, with strong hybridization between Fe-3d and C-2s,2p bands. We further consider Fe-Fe spin interactions in diamond and show that substitutional Fe{sup +1} in p-type diamond exhibits a half-metallic character, with a magnetic moment of 1.0 μ{sub B} per Fe atom and a large ferromagnetic stabilization energy of 33 meV, an order of magnitude larger than in other semiconductors, with correspondingly high Curie temperatures. These results, combined with diamond's unique properties, demonstrate that Fe doped p-type diamond is likely to be a highly suitable candidate material for spintronics applications.

  1. Effective equations for the precession dynamics of electron spins and electron-impurity correlations in diluted magnetic semiconductors

    NASA Astrophysics Data System (ADS)

    Cygorek, M.; Axt, V. M.

    2015-08-01

    Starting from a quantum kinetic theory for the spin dynamics in diluted magnetic semiconductors, we derive simplified equations that effectively describe the spin transfer between carriers and magnetic impurities for an arbitrary initial impurity magnetization. Taking the Markov limit of these effective equations, we obtain good quantitative agreement with the full quantum kinetic theory for the spin dynamics in bulk systems at high magnetic doping. In contrast, the standard rate description where the carrier-dopant interaction is treated according to Fermi’s golden rule, which involves the assumption of a short memory as well as a perturbative argument, has been shown previously to fail if the impurity magnetization is non-zero. The Markov limit of the effective equations is derived, assuming only a short memory, while higher order terms are still accounted for. These higher order terms represent the precession of the carrier-dopant correlations in the effective magnetic field due to the impurity spins. Numerical calculations show that the Markov limit of our effective equations reproduces the results of the full quantum kinetic theory very well. Furthermore, this limit allows for analytical solutions and for a physically transparent interpretation.

  2. Magnetopolaron effect in diluted semimagnetic semiconductors

    NASA Astrophysics Data System (ADS)

    Tarasov, Georgiy G.; Mazur, Yuri I.; Rakitin, Andrey S.; Lavoric, S. R.; Tomm, Jens W.; Hoerstel, W.

    1997-08-01

    Phonon-assisted self-trapping of free carrier is considered in diluted semimagnetics. It is shown that the binding energy of free magnetic polaron can be substantially larger when the 'spin-phonon' coupling is taken into account. For the particular case of 'soft' lattice dynamics the region of stability for hole-induced polaron can be promoted to the temperature of tenths of degrees and magnetic field of a few Tesla. The possible hybridized excitations with the partition of free magnetic polaron are discussed in semimagnetic semiconductors.

  3. Cd{sub 0.9375}Mn{sub 0.0625}S diluted magnetic semiconductor: A DFT study

    SciTech Connect

    Rani, Anita; Kaur, Kulwinder; Kumar, Ranjan

    2015-08-28

    We studied the spin polarized electronic band structures and magnetic properties of the diluted magnetic semiconductor Cd{sub 1-x}Mn{sub x}S in Zinc Blende phase (B3) with 0.0625 Mn by using ab initio method. The calculations were performed by using Density Functional Theory as implemented in the Spanish Initiative for Electronic Simulations with Thousands of Atoms code using local density approximation (LDA). Calculated electronic band structures and magnetic properties of Cd{sub 1-x}Mn{sub x}S are discussed in terms of contribution of Mn 3d{sup 5} 4s{sup 2}, Cd 4d{sup 10} 5s{sup 2}, S 3s{sup 2} 3p{sup 4} orbitals. The total magnetic moment is found to be 5.00 µb for Cd{sub 1−x}Mn{sub x}S at x=0.0625. This value indicate that Mn atom adds no hole carrier to the perfect CdS crystal. We found that Mn doped systems are ferromagnetic. Calculated results are in good agreement with previous studies.

  4. Review of recent efforts on the growth and characterization of nitride-based diluted magnetic semiconductors

    NASA Astrophysics Data System (ADS)

    Kane, Matthew H.; Strassburg, Martin; Asghar, Ali; Li, Nola; Fenwick, Will; Ferguson, Ian T.

    2006-02-01

    Wide bandgap nitrides and oxides have been heralded as a possible platform for future semiconductor spintronics applications based on the inherent compatibility of these materials with existing semiconductors as well as theoretical predictions of room temperature ferromagnetism. Experimental reports of room temperature ferromagnetism in these materials are complicated by disparate crystalline quality and phase purity in these materials, as well as conflicting theoretical predictions as to the nature of ferromagnetic behavior in this system. A complete understanding of these materials, and ultimately intelligent design of spintronic devices, will require an exploration of the relationship between the processing techniques, resulting transition metal atom configuration, defects, and electronic compensation as related to the structure, magnetic, and magneto-optical properties of this material. This work explores the growth and properties of Ga 1-xMn xN films by metalorganic chemical vapor deposition on cplane sapphire substrates with varying thickness, Mn concentration, and alloying elements. Homogenous Mn incorporation throughout the films was verified with Secondary Ion Mass Spectroscopy (SIMS), and no macroscopic second phases were detected using X-ray diffraction (XRD). SQUID and vibrating sample magnetometry measurements showed an apparent room temperature ferromagnetic hysteresis, whose strength can be altered considerably through annealing and introduction of either Si or Mg during the growth process. Three sets of Raman modes appeared to be sensitive to Mn incorporation. The intensities of a broad band around 300cm -1 and sharper modes near 669cm -1 increased with increasing Mn concentration. The rise of the former is attributed to a decrease in long-range lattice ordering for higher Mn concentration. The second mode is due to nitrogen vacancy-related local vibrational modes of the GaN host lattice. Si co-doped Ga 1-xMn xN results in shallow donor states in Ga

  5. Materials and device design with III-V and II-VI compound-based diluted magnetic semiconductors

    NASA Astrophysics Data System (ADS)

    Katayama-Yoshida, Hiroshi; Sato, Kazunori

    2002-03-01

    Since the discovery of the carrier induced ferromagnetism in (In, Mn)As and (Ga, Mn)As, diluted magnetic semiconductors (DMS) have been of much interest from the industrial viewpoint because of their potentiality as a new functional material (spintronics). In this paper, the magnetism in DMS is investigated based on the first principles calculations, and materials and device design with the DMS is proposed toward the spintronics. The electronic structure is calculated by the Korringa-Kohn-Rostoker method combined with the coherent potential approximation based on the local spin density approximation. We calculate the electronic structure of ferromagnetic and spin-glass DMS, and total energy difference between them is calculated to estimate whether the ferromagnetic state is stable or not. It is shown that V-, Cr- and Mn-doped III-V compounds, V- and Cr-doped II-VI compounds and Fe-, Co- and Ni-doped ZnO are promising candidates for a high-Curie temperature ferromagnet. A chemical trend in the ferromagnetism is well understood based on the double exchange mechanism [1]. Based upon this material design, some prototypes of the spintronics devices, such as a spin-FET, a photo-induced-magnetic memory and a coherent-spin-infection device, are proposed. [1] K. Sato and H. Katayama-Yoshida, Jpn. J. Appl. Phys. 39 (2000) L555, 40 (2001) L334, L485 and L651.

  6. Tunable electronic structure in dilute magnetic semiconductor Sr{sub 3}SnO/c-YSZ/Si (001) epitaxial heterostructures

    SciTech Connect

    Lee, Y. F.; Narayan, J.; Schwartz, J.

    2014-10-28

    We report a systematic study of the structural, physical, and chemical properties of epitaxial thin films of emerging dilute magnetic semiconductor (DMS) Sr{sub 3}SnO (SSO) integrated with Si (100) prepared by various post-growth annealing treatments. The transport properties of these films are primarily governed by oxygen vacancies and the results are explained with the variable-range hopping model. The increased oxygen vacancy concentration generated by post-growth vacuum annealing results in a shorter hopping distance and reduced hopping energy and Coulomb gap, leading to lower resistivity; oxygen annealing shows the opposite effects. The work function ranges from 4.54 to 4.02 eV and shows a negative linear relationship with oxygen vacancy concentration, accompanied by a 0.42 eV shift in the surface Fermi level. The transport and ultraviolet photoelectron spectroscopy probes agree quantitatively on measurement of the resistivity and surface electronic structure. The results provide a direct and consistent explanation that the property changes in the bulk and at the surface are primarily attributed to oxygen vacancies, which are believed to be the carriers in the SSO thin films. The ability to manipulate the work function and oxygen vacancy concentration in epitaxial DMS SSO thin films offers great potential for the development of spintronic devices.

  7. Effect of oxygen vacancy on half metallicity in Ni-doped CeO{sub 2} diluted magnetic semiconductor

    SciTech Connect

    Saini, Hardev S. Saini, G. S. S.; Singh, Mukhtiyar; Kashyap, Manish K.

    2015-05-15

    The electronic and magnetic properties of Ni-doped CeO{sub 2} diluted amgentic semiconductor (DMS) including the effect of oxygen vacancy (V{sub o}) with doping concentration, x = 0.125 have been calculated using FPLAPW method based on Density Functional Theory (DFT) as implemented in WIEN2k. In the present supercell approach, the XC potential was constructed using GGA+U formalism in which Coulomb correction is applied to standard GGA functional within the parameterization of Perdew-Burke-Ernzerhof (PBE). We have found that the ground state properties of bulk CeO{sub 2} compound have been modified significantly due to the substitution of Ni-dopant at the cation (Ce) site with/without V{sub O} and realized that the ferromagnetism in CeO{sub 2} remarkably depends on the V{sub o} concentrations. The presence of V{sub o}, in Ni-doped CeO{sub 2}, can leads to strong ferromagnetic coupling between the nearest neighboring Ni-ions and induces a HMF in this compound. Such ferromagnetic exchange coupling is mainly attributed to spin splitting of Ni-d states, via electrons trapped in V{sub o}. The HMF characteristics of Ni-doped CeO{sub 2} including V{sub o} makes it an ideal material for spintronic devices.

  8. Magnetic properties of the layered III-VI diluted magnetic semiconductor Ga1-xFexTe

    NASA Astrophysics Data System (ADS)

    Pekarek, T. M.; Edwards, P. S.; Olejniczak, T. L.; Lampropoulos, C.; Miotkowski, I.; Ramdas, A. K.

    2016-05-01

    Magnetic properties of single crystalline Ga1-xFexTe (x = 0.05) have been measured. GaTe and related layered III-VI semiconductors exhibit a rich collection of important properties for THz generation and detection. The magnetization versus field for an x = 0.05 sample deviates from the linear response seen previously in Ga1-xMnxSe and Ga1-xMnxS and reaches a maximum of 0.68 emu/g at 2 K in 7 T. The magnetization of Ga1-xFexTe saturates rapidly even at room temperature where the magnetization reaches 50% of saturation in a field of only 0.2 T. In 0.1 T at temperatures between 50 and 400 K, the magnetization drops to a roughly constant 0.22 emu/g. In 0 T, the magnetization drops to zero with no hysteresis present. The data is consistent with Van-Vleck paramagnetism combined with a pronounced crystalline anisotropy, which is similar to that observed for Ga1-xFexSe. Neither the broad thermal hysteresis observed from 100-300 K in In1-xMnxSe nor the spin-glass behavior observed around 10.9 K in Ga1-xMnxS are observed in Ga1-xFexTe. Single crystal x-ray diffraction data yield a rhombohedral space group bearing hexagonal axes, namely R3c. The unit cell dimensions were a = 5.01 Å, b = 5.01 Å, and c = 17.02 Å, with α = 90°, β = 90°, and γ = 120° giving a unit cell volume of 369 Å3.

  9. Resonant inelastic scattering in dilute magnetic semiconductors by x-ray fluorescence spectroscopy

    SciTech Connect

    Lawniczak-Jablonska, K. |; Jia, J.J.; Underwood, J.H.

    1997-04-01

    As modern, technologically important materials have become more complex, element specific techniques have become invaluable in studying the electronic structure of individual components from the system. Soft x-ray fluorescence (SXF) and absorption (SXA) spectroscopies provide a unique means of measuring element and angular momentum density of electron states, respectively, for the valence and conducting bands in complex materials. X-ray absorption and the decay through x-ray emission are generally assumed to be two independent one-photon processes. Recent studies, however have demonstrated that SXF excited near the absorption threshold generate an array of spectral features that depend on nature of materials, particularly on the localization of excited states in s and d-band solids and that these two processes can no be longer treated as independent. Resonant SXF offers thus the new way to study the dynamics of the distribution of electronic valence states in the presence of a hole which is bound to the electron low lying in the conduction band. This process can simulate the interaction between hole-electron pair in wide gap semiconductors. Therefore such studies can help in understanding of transport and optics phenomena in the wide gap semiconductors. The authors report the result of Mn and S L-resonant emission in Zn{sub 1{minus}x}Mn{sub x}S (with x=0.2 and 0.3) and MnS as the energy of exciting radiation is tuned across the Mn and S L{sub 3,2} absorption edge, along with the resonant excited spectra from elemental Mn as a reference.

  10. Carrier-impurity spin transfer dynamics in paramagnetic II-VI diluted magnetic semiconductors in the presence of a wave-vector-dependent magnetic field

    NASA Astrophysics Data System (ADS)

    Cygorek, M.; Tamborenea, P. I.; Axt, V. M.

    2016-05-01

    Quantum kinetic equations of motion for carrier and impurity spins in paramagnetic II-VI diluted magnetic semiconductors in a k -dependent effective magnetic field are derived, where the carrier-impurity correlations are taken into account. In the Markov limit, rates for the electron-impurity spin transfer can be derived for electron spins parallel and perpendicular to the impurity spins corresponding to measurable decay rates in Kerr experiments in Faraday and Voigt geometry. Our rigorous microscopic quantum kinetic treatment automatically accounts for the fact that, in an individual spin flip-flop scattering process, a spin flip of an electron is necessarily accompanied by a flop of an impurity spin in the opposite direction and the corresponding change of the impurity Zeeman energy influences the final energy of the electron after the scattering event. This shift in the electron energies after a spin flip-flop scattering process, which usually has been overlooked in the literature, turns out to be especially important in the case of extremely diluted magnetic semiconductors in an external magnetic field. As a specific example for a k -dependent effective magnetic field the effects of a Rashba field on the dynamics of the carrier-impurity correlations in a Hg1 -x -yCdyMnxTe quantum well are described. It is found that, although accounting for the Rashba interaction in the dynamics of the correlations leads to a modified k -space dynamics, the time evolution of the total carrier spin is not significantly influenced. Furthermore, a connection between the present theory and the description of collective carrier-impurity precession modes is presented.

  11. Investigation of transport and magnetic properties of SiC/Cu diluted magnetic semiconductor nano-multilayer films

    NASA Astrophysics Data System (ADS)

    Sun, Ning; Li, Chunjing; Fu, Yuting; Li, Yanghua; Bu, Dechong; An, Yukai; Liu, Jiwen

    2016-09-01

    The SiC/Cu nano-multilayer films were deposited on Si substrates using radio frequency and direct current alternative sputtering technique. In this paper, the transport and magnetic properties of the films were investigated. XRR shows the SiC/Cu periodical structures of the films. XRD confirms that the 3C-SiC crystal structure is formed in the films without heating substrates. The XPS indicates that the Cu atoms substitute for Si sites of the SiC lattice and exist in a mixed valance state of Cu+ and Cu2+. The best fitting for the plots of ln ρ versus T-1/4 using the combination of the Mott and the band gap VRH models suggests that the carriers in the films are strongly localized. The films have a typical semiconductor characteristic and an obvious room temperature ferromagnetism which should arise from the bond magnetic polarons. The maximum values of saturation magnetization and carrier concentration are up to 15.2 emu/cm3 and 1.86E + 22/cm3 respectively.

  12. Raman Scattering Studies in Dilute Magnetic Semiconductor Zn(1-x)Co(x)O

    NASA Technical Reports Server (NTRS)

    Samanta, K.; Bhattacharya, P.; Katiyar, R. S.; Iwamoto, W.; Pagiluso, P. G.; Rettori, C.

    2006-01-01

    Raman spectra of ZnO and Co substituted Zn1-xCoxO (ZCO) were carried out using the Raman microprobe system with an p.,+ ion laser source of 514.5 nm wavelength. The shift towards the lower frequency side of the nonpolar E210w mode and the broadening due to Co substitution in ZnO were analyzed using the phonon confinement model. The magnetic measurements showed ferromagnetic behavior with the maximum saturation magnetization (1.2micron Beta/ErCo) for 10% Co substitution, which decreased wi th at further increase in Co concentrations. The intensities of E1(LO) at 584 cm-1 and multiphonon modes at 540 cm-1 were increased with an increase in Co substitution. The additional Raman modes in ceramic targets of ZCO spectra for higher concentration of Co substitution (x=15%-20%) were identified to be due to the spinel ZnCo2O4 secondary phase.

  13. Quantum Oscillations and Galvanomagnetic Phenomena in the Dilute Magnetic Zerogap Semiconductor MERCURY(1 - Telluride.

    NASA Astrophysics Data System (ADS)

    Mani, Ramesh Ganapathi

    Transport properties and Shubnikov-deHaas oscillations have been investigated in a series of Hg(,1-x)Mn(,x)Te samples, 0.03 < x < 0.15, in magnetic fields up to 45 kOe. The transport properties were determined by measuring the Hall voltage and the magnetoresistance as a function of the magnetic field for temperatures, 1.5 K < T < 300 K, using the direct current technique. Shubnikov-deHaas oscillations were studied using field modulation techniques over the temperature range 1.5 K < T < 4.2 K. In a nearly gapless sample (x (TURN) 0.07) with a low ShdH frequency (F < 5 kOe), negative magnetoresistance was observed for temperatures T < 60 K. The onset of negative magnetoresistance was correlated with p-type behavior in the Hall voltage. The observation of two band conduction at the lowest temperatures suggests that the p-type behavior be associated with conduction within a resonant acceptor state and that the negative magnetoresistance is due to a change in the activation energy of the resonant acceptor state as a function of the magnetic field. An anomalous increase in the low field mobility was observed with decreasing temperature for T < 10 K. As the mechanism that limits the mobility at low temperatures is scattering due to charged impurity centers, we suggest that the anomaly is due to a reduction in the number of charged centers as the temperature is reduced. Beats were observed in the Shubnikov-deHaas oscillations as a function of the magnetic field. The beats were found to be temperature independent over the range 1.5 K < T < 4.2 K. The beats are ascribed to dissimilar Fermi surface cross-sectional areas for the spin-up and spin-down electrons due to the exchange interaction between the localized magnetic moment on the Mn('++) ions and the band electrons. Waveform analysis of the oscillatory patterns using the Best Recursive Fit was used to obtain the effective mass ratio and the Dingle temperature of the two ShdH components. The variation of the effective

  14. Moment enhancement in dilute magnetic semiconductors: MnxSi1-x with x = 0.1%

    SciTech Connect

    Shaughnessy, M; Fong, C Y; Snow, R; Liu, K; Pask, J E; Yang, L H

    2009-03-12

    The experimentally determined magnetic moments/Mn, M, in Mn{sub x}Si{sub 1-x} are considered, with particular attention to the case with 5.0 {micro}{sub B}/Mn, obtained for x = 0.1%. The existing theoretical M values for neutral Mn range from 2.83 to 3.78 {micro}B/Mn. To understand the observed M = 5.0 {micro}{sub B}/Mn, we investigated Mn{sub x}Si{sub 1-x} for a series of Mn concentrations and defect configurations using a first-principles density functional method. We find a structure in which the moment is enhanced. It has 5.0 {micro}B/Mn, the Mn at a substitutional site, and a Si at a second-neighbor interstitial site in a large unit cell. Subsequent analysis shows that the observed large moment can be understood as a consequence of the weakened d-p hybridization resulting from the introduction of the second-neighbor interstitial Si and substantial isolation of the Mn-second-neighbor Si complex at such concentrations.

  15. MBE growth and structural and magnetic properties of (In 1-yAl y) 1-xMn xAs-diluted magnetic semiconductors

    NASA Astrophysics Data System (ADS)

    Lee, W. N.; Chen, Y. F.; Huang, J. H.; Guo, X. J.; Kuo, C. T.; Ku, H. C.

    2006-04-01

    A series of quaternary-diluted magnetic semiconductors, (In 1-yAl y) 1-xMn xAs, have been successfully grown on InP substrates by low-temperature molecular beam epitaxy. The (In 0.52Al 0.48) 1-xMn xAs with x⩽0.11 were grown on a nearly lattice-matched In 0.52Al 0.48As buffer, while the (In 1-yAl y) 1-xMn xAs with a higher Mn content of 0.11< x⩽0.18 were grown on a graded 3-layer In 1-yAl yAs buffer structure. The results of transmission electron microscopy and double-crystal X-ray diffraction reveal that all (In 1-yAl y) 1-xMn xAs epilayers are single crystal with zincblende structure, and the lattice constant increases with increasing the Mn content. The magnetic measurements show that the (In 1-yAl y) 1-xMn xAs semiconductors exhibit a paramagnetic-like state for x⩽0.05 while a ferromagnetic state for x>0.05, and the Curie temperature of ferromagnetic (In 1-yAl y) 1-xMn xAs increases with increasing Mn content.

  16. μSR investigation of a new diluted magnetic semiconductor Li(Zn,Mn,Cu)As with Mn and Cu codoping at the same Zn sites

    NASA Astrophysics Data System (ADS)

    Guo, S. L.; Zhao, Y.; Man, H. Y.; Ding, C.; Gong, X.; Zhi, G. X.; Fu, L. C.; Gu, Y. L.; Frandsen, B. A.; Liu, L.; Cheung, S. C.; Munsie, T. J.; Wilson, M. N.; Cai, Y. P.; Luke, G. M.; Uemura, Y. J.; Ning, F. L.

    2016-09-01

    We report the successful synthesis and characterization of a new type I–II–V bulk form diluted magnetic semiconductor (DMS) Li(Zn,Mn,Cu)As, in which charge and spin doping are decoupled via (Cu,Zn) and (Mn,Zn) substitution at the same Zn sites. Ferromagnetic transition temperature up to  ∼33 K has been observed with a coercive field  ∼40 Oe for the 12.5% doping level. μSR measurements confirmed that the magnetic volume fraction reaches nearly 100% at 2 K, and the mechanism responsible for the ferromagnetic interaction in this system is the same as other bulk form DMSs.

  17. Diluted Magnetic Iv-Vi Compounds

    NASA Astrophysics Data System (ADS)

    Bauer, G.; Pascher, H.

    The following sections are included: * INTRODUCTION * MAGNETIC PROPERTIES * Susceptibility * High Field Magnetization * Spin Glass Phase * Free Carrier Induced Ferromagnetism * Magnetic Properties of Layered IV-VI Diluted Magnetic Semiconductors * CALCULATION OF LANDAU STATES: MEAN FIELD THEORY FOR IV-VI COMPOUNDS * MAGNETOTRANSPORT * OPTICAL INTERBAND TRANSITIONS * Photoluminescence Without Magnetic Field * Magnetooptical Interband Transitions * COHERENT RAMAN SCATTERING * Theory * Classical approach * Nonlinear susceptibility in semiconductors * Experimental Results and Discussion * Results: Pb1-xMnxTe * Results: Pb1-xEuxSe * Effective Electron and Hole g factors * FAR INFRARED SPECTROSCOPY * COMPARISON EXPERIMENT - MOLECULAR FIELD THEORY * Band and Exchange Parameters * Selection Rules * CONCLUSION * ACKNOWLEDGEMENTS * REFERENCES

  18. A first principles study of half-metallic ferromagnetism in In1-xTixP (x = 0.06) diluted magnetic semiconductor

    NASA Astrophysics Data System (ADS)

    Saini, Hardev S.; Singh, Mukhtiyar; Thakur, Jyoti; Saini, G. S. S.; Kashyap, Manish K.

    2016-05-01

    A first principles approach has been used to calculate the electronic and magnetic properties of In1-xTixP (x = 0.06) diluted magnetic semiconductor (DMS) compound. The calculations have been carried out using the highly precise all electron full potential Linear Augmented Plane Wave (FPLAPW) method within generalized gradient approximation (GGA) as exchange-correlation (XC) potentials. The estimated results show that the Ti-doping generate robust half metallic ferromagnetism with the 100% spin polarization at Fermi level (EF) in InP. Due to this peculiar property, the resultant compound behaves as true half-metallic ferromagnet which is best suited for spintronic applications. The total magnetic moments of this compound are mainly due to Ti-d states present at EF with almost negligible contribution from other atoms.

  19. La(Zn1-2xMnxCux)AsO: A 1111-type diluted magnetic semiconductor with manganese and copper codoping at Zn sites

    NASA Astrophysics Data System (ADS)

    Guo, Shengli; Zhao, Yao; Gong, Xin; Man, Huiyuan; Ding, Cui; Zhi, Guoxiang; Fu, Licheng; Gu, Yilun; Wang, Hangdong; Chen, Bin; Guo, Yang; Ning, F. L.

    2016-06-01

    We report the successful synthesis and characterization of a new layered diluted magnetic semiconductor (DMS) La(Zn,Mn,Cu)AsO which is isostructural to Fe-based “1111” superconductor. Mn and Cu are codoped into the same Zn sites to provide local moments and carriers, respectively. A ferromagnetic transition with the highest T C of ˜ 8 K has been observed for x = 0.150 from magnetization measurements. Iso-thermal magnetization plots show that the compound has a coercive field, ˜ 500 Oe, much smaller than that in (La,Ba)(Zn,Mn)AsO. The resistivity of all samples display semiconducting behavior with the doping level up to 15%.

  20. Isocrystalline core/shell synthesis of high quality II-VI diluted magnetic semiconductor quantum dots: ligand-field spectroscopic studies

    NASA Astrophysics Data System (ADS)

    Radovanovic, Pavle V.; Gamelin, Daniel R.

    2002-11-01

    Ligand field electronic absorption spectroscopy has been applied as a direct probe of Co2+ dopant ions in II-VI based diluted magnetic semiconductor quantum dots. Synthesis of Co2+-doped CdS (Co2+:CdS) quantum dots by simple coprecipitation in inverted micelle solutions has been found to yield predominantly surface bound dopant ions, which are unstable with respect to solvation in a coordinating solvent (pyridine). The solvation kinetics are biphasic, involving two transient intermediates. In contrast, Co2+ ions are doped much more isotropically in ZnS QDs, and this difference is attributed to the similar ionic radii of Co2+ and Zn2+ ions (0.74 Å), as opposed to Cd2+ ions (0.97 Å). We have developed an isocrystalline core/shell synthetic methodology that enables us to synthesize high quality internally doped Co2+:CdS quantum dots. The effect of Co2+ binding on the surface energies of CdS and ZnS quantum dots is discussed and related to the growth mechanism of diluted magnetic semiconductor quantum dots.

  1. Microstructures, magnetic and electric properties of diluted magnetic semiconductors InTe{sub 1−x} Fe{sub x} (Co{sub x})

    SciTech Connect

    El-Sayed, Karimat; Sedeek, K.; Heiba, Z.K.; Hantour, H.H.

    2013-06-01

    Highlights: ► The prepared InTe{sub 0.9}Fe{sub 0.1} was found to be ferromagnetic at room temperature and can be characterized as diluted magnetic semiconductors. ► The presence of staking faults, various types of defects, strained lattice, grain boundaries and the impurity of minor non-magnetic phase were suggested to participate in high temperature ferromagnetism. - Abstract: InTe compound doped by 10% of Fe or Co respectively was synthesized. X-ray diffraction (XRD), transmission electron microscope (TEM), scanning electron microscope (SEM), energy dispersive X-ray (EDX), vibrating sample magnetometer (VSM) and Kiethley electrometer were used for characterizing the prepared samples. XRD show the presence of InTe{sub 0.9}Fe{sub 0.1} or InTe{sub 0.9}Co{sub 0.1} together with minor In{sub 4}Te{sub 3} phase. InTe{sub 0.9}Fe{sub 0.1} is ferromagnetic with high Curie and high blocking temperature, while InTe{sub 0.9}Co{sub 0.1} is antiferromagnetic with two high Neels temperatures. σRT of InTe{sub 0.9}Fe{sub 0.1} and InTe{sub 0.9}Co{sub 0.1} are greater than those of InTe. The higher conductivity is due to the higher carrier's density obtained from the interaction of the sp-d orbitals, of the electric and magnetic system. The presence of In{sub 4}Te{sub 3} minor phase and different kinds of defects are taking major roles in the formation of high Tc ferromagnetism and antiferromagnetism.

  2. Structural, optical, and magnetic properties of Cu- and Ni-codoped CdO dilute magnetic nanocrystalline semiconductor: effect of hydrogen post-treatment

    NASA Astrophysics Data System (ADS)

    Dakhel, A. A.; Bououdina, M.

    2015-06-01

    Cadmium oxide codoped with Cu and Ni ions powders was synthesised by thermal co-decomposition of a mixture of cadmium, copper, and nickel acetylacetonates. The mass ratio of Cu/Cd was fixed, while the Ni/Cd mass ratio was varied systematically. The purpose of the present study is to prepare powders having room-temperature ferromagnetic (RT-FM) properties. X-ray fluorescence (XRF) and X-ray diffraction (XRD) confirm the purity and the formation of single nanocrystalline structure of the as-prepared powders. The energy bandgap of the as-prepared powders was found to vary slightly and then increases by 3.96-38.02 % after post-H2-treatment. Magnetic measurements reveal that all as-prepared doped CdO powders gained partial (RT-FM) properties. Furthermore, the created RT-FM is dependent on the Ni% doping level. After annealing under H2 gas, a strong enhancement of RT-FM was observed, especially for 1.2 % Ni-doping-level powder where the whole powder became ferromagnetic with coercivity, remanence, and saturation magnetisation of 249.2 Oe, 4.52 memu/g, and 14.57 memu/g, respectively, representing an increase by ~241.3, 1062, and 1700 %, respectively, in comparison with the as-prepared sample. Thus, it was proved, for the first time, the possibility of producing of codoped CdO with RT-FM, where the magnetic characteristics can be tailored by doping and post-treatment under H2 atmosphere, thus a new potential candidate for dilute magnetic semiconductor (DMS).

  3. Influence of Fe doping on the structural, optical and magnetic properties of ZnS diluted magnetic semiconductor

    NASA Astrophysics Data System (ADS)

    Saikia, D.; Raland, RD.; Borah, J. P.

    2016-09-01

    Fe doped ZnS nanoparticles with different concentrations of Fe, synthesized by microwave assisted co-precipitation method have been reported. The incorporation of Fe2+ and Fe3+ ions into ZnS lattice are confirmed by X-ray diffraction (XRD) and Electron Paramagnetic resonance (EPR) study. XRD and High Resolution Transmission electron Microscope (HRTEM) results confirm the phase purity of the samples and indicate a reduction of the particle size with increase in Fe concentration. EDAX analysis confirms the presence of Zn, S and Fe in the samples. A yellow-orange emission peak is observed in Photoluminescence (PL) spectra which exhibits the Characteristic 4T2 (4G)-6A1 (6S) transition of Fe3+ ion. The room temperature magnetic studies as analyzed from M-H curves were investigated from vibrating samples magnetometer (VSM) which shows a weak ferro and superparamagnetic like behavior in 1% and 3% Fe-doped ZnS nanocrystals, whereas; at 10% Fe-doping concentrations, antiferromagnetism behavior is achieved. The ZFC-FC measurement reveals that the blocking temperature of the nanoparticle is above the room temperature.

  4. Enhancement of two photon absorption with Ni doping in the dilute magnetic semiconductor ZnO crystalline nanorods

    SciTech Connect

    Rana, Amit Kumar; Kumar, Yogendra; Arjunan, M.S.; Sen, Somaditya; Shirage, Parasharam M. E-mail: paras.shirage@gmail.com; J, Aneesh; Adarsh, K. V.

    2015-12-07

    In this letter, we have investigated the third-order optical nonlinearities of high-quality Ni doped ZnO nanorods crystallized in wurtzite lattice, prepared by the wet chemical method. In our experiments, we found that the two photon absorption coefficient (β) increases by as much as 14 times, i.e., 7.6 ± 0.4 to 112 ± 6 cm/GW, when the Ni doping is increased from 0% to 10%. The substantial enhancement in β is discussed in terms of the bandgap scaling and Ni doping. Furthermore, we also show that the optical bandgap measured by UV-Vis and photoluminescence spectroscopies, continuously redshift with increasing Ni doping concentration. We envision that the strong nonlinear optical properties together with their dilute magnetic effects, they form an important class of materials for potential applications in magneto-optical and integrated optical chips.

  5. Enhancement of two photon absorption with Ni doping in the dilute magnetic semiconductor ZnO crystalline nanorods

    NASA Astrophysics Data System (ADS)

    Rana, Amit Kumar; J, Aneesh; Kumar, Yogendra; M. S, Arjunan; Adarsh, K. V.; Sen, Somaditya; Shirage, Parasharam M.

    2015-12-01

    In this letter, we have investigated the third-order optical nonlinearities of high-quality Ni doped ZnO nanorods crystallized in wurtzite lattice, prepared by the wet chemical method. In our experiments, we found that the two photon absorption coefficient (β) increases by as much as 14 times, i.e., 7.6 ± 0.4 to 112 ± 6 cm/GW, when the Ni doping is increased from 0% to 10%. The substantial enhancement in β is discussed in terms of the bandgap scaling and Ni doping. Furthermore, we also show that the optical bandgap measured by UV-Vis and photoluminescence spectroscopies, continuously redshift with increasing Ni doping concentration. We envision that the strong nonlinear optical properties together with their dilute magnetic effects, they form an important class of materials for potential applications in magneto-optical and integrated optical chips.

  6. Materials Design of CuAlO2-Based Dilute Magnetic Semiconductors by First-Principles Calculations and Monte Carlo Simulations

    NASA Astrophysics Data System (ADS)

    Kizaki, Hidetoshi; Sato, Kazunori; Katayama-Yoshida, Hiroshi

    2008-08-01

    In order to propose a new dilute magnetic semicoductors (DMS) other than II-VI and III-V semiconductor based DMS, magnetism of CuAlO2 based DMS is investigated by the Korringa-Kohn-Rostoker method combined with the coherent potential approximation within the local spin density approximation and Monte Carlo simulations (MCS). We found that effective exchange interactions (Jij) between magnetic ions are short-ranged and Jij's between magnetic ions in the same Cu-plane are ferromagnetic and ones between the different Cu-planes are nearly negligible in CuAlO2-based DMS. In comparison to this, Jij's between magnetic impurities occupied at Al-sites are slightly longer-ranged due to the stronger hybridization effect. According to MCS calculations, it is found that the value of the Curie temperature (TC) exceeds 80 K in (Cu,Fe)AlO2- and (Cu,Co)AlO2-DMS and that the TC is suppressed due to the strong percolation effect. This effect also appears in Cu(Al,TM)O2, where TM denote 3d-transition metal elements.

  7. (La1-xBax)(Zn1-xMnx)AsO: A two-dimensional 1111-type diluted magnetic semiconductor in bulk form

    NASA Astrophysics Data System (ADS)

    Ding, Cui; Man, Huiyuan; Qin, Chuan; Lu, Jicai; Sun, Yunlei; Wang, Quan; Yu, Biqiong; Feng, Chunmu; Goko, T.; Arguello, C. J.; Liu, L.; Frandsen, B. A.; Uemura, Y. J.; Wang, Hangdong; Luetkens, H.; Morenzoni, E.; Han, W.; Jin, C. Q.; Munsie, T.; Williams, T. J.; D'Ortenzio, R. M.; Medina, T.; Luke, G. M.; Imai, T.; Ning, F. L.

    2013-07-01

    We report the synthesis and characterization of a bulk diluted magnetic semiconductor (La1-xBax)(Zn1-xMnx)AsO (0 ⩽ x ⩽ 0.2) with a layered crystal structure identical to that of the 1111-type FeAs superconductors. No ferromagnetic order occurs with (Zn,Mn) substitution in the parent compound LaZnAsO without charge doping. Together with carrier doping via (La,Ba) substitution, a small amount of Mn substituting for Zn results in ferromagnetic order with TC up to ˜40 K, although the system remains semiconducting. Muon spin relaxation measurements confirm the development of ferromagnetic order in the entire volume, with the relationship between the internal field and TC consistent with the trend found in (Ga,Mn)As and the 111-type Li(Zn,Mn)As and the 122-type (Ba,K)(Zn,Mn)2As2 systems.

  8. Pressure effect on the magnetism of the diluted magnetic semiconductor (B a1 -xKx ) (Zn1-yM ny ) 2A s2 with independent spin and charge doping

    NASA Astrophysics Data System (ADS)

    Sun, F.; Li, N. N.; Chen, B. J.; Jia, Y. T.; Zhang, L. J.; Li, W. M.; Zhao, G. Q.; Xing, L. Y.; Fabbris, G.; Wang, Y. G.; Deng, Z.; Uemura, Y. J.; Mao, H. K.; Haskel, D.; Yang, W. G.; Jin, C. Q.

    2016-06-01

    We used x-ray magnetic circular dichroism (XMCD) to probe the ferromagnetic properties of As p -symmetric (4 p ) states in the recently synthesized diluted magnetic semiconductor (B a1 -xKx) (Zn1-yM ny) 2A s2 system under ambient- and high-pressure conditions. The As K -edge XMCD signal scales with the sample magnetization (dominated by Mn) and scales with the ferromagnetic ordering temperature T c , and hence it is representative of the bulk magnetization. The XMCD intensity gradually decreases upon compression and vanishes at around 25 GPa, indicating quenching of ferromagnetism at this pressure. Transport measurements show a concomitant increase in conductivity with pressure, leading to a nearly metallic state at about the same pressure where magnetic order collapses. High-pressure x-ray diffraction shows an absence of structural transitions to 40 GPa. The results indicate that the mobility of doped holes, probed by both transport and x-ray absorption spectroscopy (4 p band broadening), is intimately connected with the mechanism of magnetic ordering in this class of compounds and that its control using external pressure provides an alternative route for tuning the magnetic properties in diluted magnetic semiconductor materials.

  9. Correlation between morphology, chemical environment, and ferromagnetism in the intrinsic-vacancy dilute magnetic semiconductor Cr-doped Ga2Se3/Si(001)

    NASA Astrophysics Data System (ADS)

    Yitamben, E. N.; Lovejoy, T. C.; Pakhomov, A. B.; Heald, S. M.; Negusse, E.; Arena, D.; Ohuchi, F. S.; Olmstead, M. A.

    2011-01-01

    Chromium-doped gallium sesquiselenide, Cr:Ga2Se3, is a member of a new class of dilute magnetic semiconductors exploiting intrinsic vacancies in the host material. The correlation among room-temperature ferromagnetism, surface morphology, electronic structure, chromium concentration, and local chemical and structural environments in Cr:Ga2Se3 films grown epitaxially on silicon is investigated with magnetometry, scanning tunneling microscopy, photoemission spectroscopy, and x-ray absorption spectroscopy. Inclusion of a few percent chromium in Ga2Se3 results in laminar, semiconducting films that are ferromagnetic at room temperature with a magnetic moment ⩾4μB/Cr. The intrinsic-vacancy structure of defected-zinc-blende β-Ga2Se3 enables Cr incorporation in a locally octahedral site without disrupting long-range order, determined by x-ray absorption spectroscopy, as well as strong overlap between Cr 3d states and the Se 4p states lining the intrinsic-vacancy rows, observed with photoemission. The highest magnetic moment per Cr is observed near the solubility limit of roughly one Cr per three vacancies. At higher Cr concentrations, islanded, metallic films result, with a magnetic moment that depends strongly on surface morphology. The effective valence is Cr3+ in laminar films, with introduction of Cr0 upon islanding. A mechanism is proposed for laminar films whereby ordered intrinsic vacancies mediate ferromagnetism.

  10. Microstructural and Optical properties of transition metal (Cu) doped ZnO diluted magnetic semiconductor nano thin films fabricated by sol gel method

    NASA Astrophysics Data System (ADS)

    Ozturk, Ozgur; Asikuzun, Elif; Tasci, A. Tolga; Arda, Lutfi; Demirozu Senol, Sevim; Celik, Sukru; Terzioglu, Cabir

    Undoped and Cu (Copper) doped ZnO (Zn1-xCuxO) semiconductor thin films were produced by using sol-gel method. Cu was doped 1%, 2%, 3%, 4% and 5% ratio. Methanol and monoethanolamine (MEA) were used as solvent and stabilizer. In this study, the effect of Cu doping was investigated on microstructural and optical properties of ZnO DMS thin films. XRD, SEM, AFM and UV-VIS spectrometer measurements were performed for the microstructural and optical characterization. XRD, SEM and AFM results were showed that all of Cu doped ZnO based thin films have a hexagonal structure. The grain size of Cu doped ZnO thin films and morphology of surface were changed with increasing Cu doping. The optical transmittance of transition metal (Cu) doped ZnO thin films were decreased with doping. Keywords:Diluted Magnetic Semiconductor (DMS), Thin Film, Cu-doping, Bandgap Energy, ZnO. This research has been supported by the Kastamonu University Scientific Research Projects Coordination Department under the Grant No. KU-BAP-05/2015-12 and the Scientific and Technological Research Council of Turkey (TUBITAK) Project No. 114F259.

  11. Weak ferromagnetism and temperature dependent dielectric properties of Zn{sub 0.9}Ni{sub 0.1}O diluted magnetic semiconductor

    SciTech Connect

    Ahmed, Raju; Moslehuddin, A.S.M.; Mahmood, Zahid Hasan; Hossain, A.K.M. Akther

    2015-03-15

    Highlights: • Single phase wurtzite structure was confirmed from XRD analysis. • Weak ferromagnetic behaviour at room temperature. • Pure semiconducting properties confirmed from temperature dependent conductivity. • Smaller dielectric properties at higher frequency. • Possible potential application in high frequency spintronic devices. - Abstract: In this study the room temperature ferromagnetic behaviour and dielectric properties of ZnO based diluted magnetic semiconductor (DMS) have been investigated using nominal chemical composition Zn{sub 0.9}Ni{sub 0.1}O. The X-ray diffraction analysis confirmed formation of single phase hexagonal wurtzite structure. An increase in grain size with increasing sintering temperature was observed from scanning electron microscopy. Field dependent DC magnetization values indicated dominant paramagnetic ordering along with a slight ferromagnetic behaviour at room temperature. Frequency dependent complex initial permeability showed some positive values around 12 at room temperature. In dielectric measurement, an increasing trend of complex permittivity, loss tangent and ac conductivity with increasing temperature were observed. The temperature dependent dispersion curves of dielectric properties revealed clear relaxation at higher temperature. Frequency dependent ac conductivity was found to increase with frequency whereas complex permittivity and loss tangent showed an opposite trend.

  12. Rutile-type Co doped SnO2 diluted magnetic semiconductor nanoparticles: Structural, dielectric and ferromagnetic behavior

    NASA Astrophysics Data System (ADS)

    Mehraj, Sumaira; Shahnawaze Ansari, M.; Alimuddin

    2013-12-01

    Nanoparticles of basic composition Sn1-xCoxO2 (x=0.00, 0.01, 0.03, 0.05 and 0.1) were synthesized through the citrate-gel method and were characterized for structural properties using X-ray diffraction (XRD), Scanning electron microscopy (SEM), Energy dispersive X-ray spectroscopy (EDS) and Fourier transform infrared spectroscopy (FT-IR). XRD analysis of the powder samples sintered at 500 °C for 12 h showed single phase rutile type tetragonal structure and the crystallite size decreased as the cobalt content was increased. FT-IR spectrum displayed various bands that came due to fundamental overtones and combination of O-H, Sn-O and Sn-O-Sn entities. The effect of Co doping on the electrical and magnetic properties was studied using dielectric spectroscopy and vibrating sample magnetometer (VSM) at room temperature. The dielectric parameters (ε, tan δ and σac) show their maximum value for 10% Co doping. The dielectric loss shows anomalous behavior with frequency where it exhibits the Debye relaxation. The variation of dielectric properties and ac conductivity with frequency reveals that the dispersion is due to the Maxwell-Wagner type of interfacial polarization in general and hopping of charge between Sn2+ and Sn4+ as well as between Co2+ and Co3+ ions. The complex impedance analysis was used to separate the grain and grain boundary contributions in the system which shows that the conduction process in grown nanoparticles takes place predominantly through grain boundary volume. Hysteresis loops were observed clearly in M-H curves from 0.01 to 0.1% Co doped SnO2 samples. The saturation magnetization of the doped samples increased slightly with increase of Co concentration. However pure SnO2 displayed paramagnetism which vanished at higher values of magnetic field.

  13. Observation of Strong-Coupling Effects in a Diluted Magnetic Semiconductor Ga1-xFexN

    NASA Astrophysics Data System (ADS)

    Pacuski, W.; Kossacki, P.; Ferrand, D.; Golnik, A.; Cibert, J.; Wegscheider, M.; Navarro-Quezada, A.; Bonanni, A.; Kiecana, M.; Sawicki, M.; Dietl, T.

    2008-01-01

    The giant Zeeman splitting of free excitons is measured in Ga1-xFexN. Magneto-optical and magnetization data imply the ferromagnetic sign and a reduced magnitude of the effective p-d exchange energy governing the interaction between Fe3+ ions and holes in GaN, N0β(app)=+0.5±0.2eV. This finding corroborates the recent suggestion that the strong p-d hybridization specific to nitrides and oxides leads to significant renormalization of the valence band exchange splitting.

  14. D Haas-Van Alphen Oscillations in the Diluted Magnetic Semiconductor MERCURY(1-X)IRON(X)SELENIUM.

    NASA Astrophysics Data System (ADS)

    Miller, Michael Montgomery

    de Haas-van Alphen measurements are performed in oriented single crystals of Hg_{ rm 1-x}Fe_{rm x}Se in the range 0.0 <=q x <=q 0.05 for 0.5 < T < 4.2K for the magnetic field range 0.2 T < H < 1.0 T. These data can be interpreted in terms of a closed orbit magnetic breakdown model. The effect of Fe on the conduction band is explored in some detail. It is found that the presence of Fe lowers the Dingle temperature in a non-monotonic fashion, i.e., there is a minimum in the Dingle temperature for x ~ 0.001. This effect cannot be attributed to a gross modification of the band structure. Effective mass measurements are in good agreement with those expected for HgSe. However, the presence of Fe is seen to have a subtle effect on the band structure. The overall symmetry of the band structure may be modified by the addition of Fe. Furthermore, the presence of Fe tends to decrease the inversion asymmetry splitting of the conduction band as evidenced in the low-field beating.

  15. Enhanced Room Temperature Ferromagnetism by Fe Doping in Zn0.96Cu0.04O Diluted Magnetic Semiconductors

    NASA Astrophysics Data System (ADS)

    Muthukumaran, S.; Ashokkumar, M.

    2016-02-01

    Zn0.96- x Cu0.04Fe x O (0 ≤ x ≤ 0.04) nanoparticles synthesized via the sol-gel technique had a hexagonal wurtzite ZnO structure without any Fe/Cu-related secondary phases. The crystallite size was reduced from Fe = 0% (23 nm) to Fe = 4% (16 nm) due to the suppression of grain surface growth by foreign impurities. Doping of higher Fe concentrations into Zn-Cu-O suppressed the ultra-violet (UV) emission band and balanced the defect-related visible emissions. The decrease of the UV and green emission intensity ratio ( I UV/ I green) and the UV and blue emission intensity ratio ( I UV/ I blue) in photoluminescence spectra implied an increase of defect states with the increase of Fe concentrations. All the samples showed clear room temperature ferromagnetism. The saturation magnetization was increased by Fe co-doping which was attributed to the interaction between Fe-Fe ions. X-ray photoelectron spectra confirmed the absence of secondary phases like Fe3O4.

  16. Characteristic Behavior of ESR Linewidth in Cr-doped PbTe-based Diluted Magnetic Semiconductors in the Vicinity of Ferromagnetic Ordering Transition

    NASA Astrophysics Data System (ADS)

    Zvereva, E.; Savelieva, O.; Ibragimov, S.; Slyn'ko, E.; Slyn'ko, V.

    2011-12-01

    Here we report on magnetization (T = 1.8-400 K, B≤7 T) and X-band ESR study (f = 9.1-9.6 GHz, T = 90-450 K) for Pb1-yCryTe ferromagnetic semiconductor and two new PbTe-based semiconductors Pb1-x-ySnxCryTe and Pb1-x-yMgxCryTe in the vicinity of the transition to ferromagnetic state. It was found that these semiconductors demonstrate ferromagnetism at temperatures higher than room temperature. The Curie temperature TC varies in a wide range (150-390 K) depending on the matrix composition and chromium content. In the paramagnetic phase the ESR spectra show a single asymmetrical line of Dysonian shape due to skin effect, typical of conducting materials. Regardless of matrix composition the effective g-factor tends to the saturation value g = 2.08±0.02 and the linewidth is ΔB≈0.08 T at the highest temperature limit. Upon approaching TC from above g-factor slowly increases, while the linewidth falls approximately two times and passes through the minimum at T*≈1.2TC. In the vicinity of TC the ESR parameters show distinct anomalies, which were associated with presence of strong magnetic fluctuation at an onset of FM ordering.

  17. (Sr1-xNax)(Cd1-xMnx)2As2: A new charge and spin doping decoupled diluted magnetic semiconductors with CaAl2Si2-type structure

    NASA Astrophysics Data System (ADS)

    Chen, Bijuan; Deng, Zheng; Li, Wenmin; Gao, Moran; Li, Zhi; Zhao, Guoqiang; Yu, Shuang; Wang, Xiancheng; Liu, Qingqing; Jin, Changqing

    2016-08-01

    We report the synthesis and characterization of a new bulk diluted ferromagnetic semiconductor via Na and Mn co-doping in SrCd2As2 with a hexagonal CaAl2Si2-type structure. Together with carrier doping via (Sr,Na) substitution, spin doping via (Cd,Mn) substitution results in ferromagnetic order with Curie temperature of TC up to 13 K. Negative magnetoresistance is assigned to weak localization at low temperatures, where the magnetization of samples becomes saturated. The hexagonal structure of (Sr1-xNax)(Cd1-xMnx)2As2 can be acted as a promising candidate for spin manipulations owing to its relatively small coercive field of less than 24 Oe.

  18. Elimination of charge carrier trapping in diluted semiconductors

    NASA Astrophysics Data System (ADS)

    Abbaszadeh, D.; Kunz, A.; Wetzelaer, G. A. H.; Michels, J. J.; Crăciun, N. I.; Koynov, K.; Lieberwirth, I.; Blom, P. W. M.

    2016-06-01

    In 1962, Mark and Helfrich demonstrated that the current in a semiconductor containing traps is reduced by N/Ntr, with N the amount of transport sites, Nt the amount of traps and r a number that depends on the trap energy distribution. For r > 1, the possibility opens that trapping effects can be nearly eliminated when N and Nt are simultaneously reduced. Solution-processed conjugated polymers are an excellent model system to test this hypothesis, because they can be easily diluted by blending them with a high-bandgap semiconductor. We demonstrate that in conjugated polymer blends with 10% active semiconductor and 90% high-bandgap host, the typical strong electron trapping can be effectively eliminated. As a result we were able to fabricate polymer light-emitting diodes with balanced electron and hole transport and reduced non-radiative trap-assisted recombination, leading to a doubling of their efficiency at nearly ten times lower material costs.

  19. Cluster approach to dilute magnetism

    NASA Astrophysics Data System (ADS)

    Holvorcem, Paulo R. C.; Osório, Roberto

    1988-10-01

    A cluster algebra is developed for the definition of independent correlation functions in the cluster-variation method (CVM) for the spin-1 Ising model. A scheme is then introduced for the study of site-dilute spin- {1}/{2} Ising models by means of the CVM. The procedure regards the site-dilute spin- {1}/{2} model as the spin-1 model with additional constraints due to dilution. The Desjardins-Steinsvoll algortihm is used for the transformation of the CVM equations into a set of differential equations for the independent correlation functions with the inverse temperature as parameter. The evolution of the correlation functions with temperature and the behavior of response functions such as the specific heat and the susceptability are then obtained for any degree of dilution. As an introduction to this scheme, its detailed application is presented here for the simple case of the pair approximation.

  20. Low-temperature activation and deactivation of high-Curie-temperature ferromagnetism in a new diluted magnetic semiconductor: Ni2+-Doped SnO2

    SciTech Connect

    Archer, Paul I.; Radovanovic, Pavle; Heald, Steve M.; Gamelin, Daniel R.

    2005-10-19

    We report the synthesis of colloidal Ni2+-doped SnO2 (Ni2+:SnO2) nanocrystals and their characterization by electronic absorption, magnetic circular dichroism, X-ray absorption, magnetic susceptibility, scanning electron microscopy, and X-ray diffraction measurements. The Ni2+ dopants are found to occupy pseudo-octahedral Sn4+ cation sites of rutile SnO2 without local charge compensation. The paramagnetic nanocrystals exhibit robust high-TC ferromagnetism (Ms (300 K) = 0.8 μB/Ni2+) when spin-coated into films, attributed to the formation of interfacial fusion defects. Facile reversibility of the paramagnetic-to-ferromagnetic phase transition is also observed. This magnetic phase transition is studied as a function of temperature, time, and atmospheric composition, from which the barrier to ferromagnetic activation is estimated to be Ea = 1200 cm-1. This energy is associated with ligand mobility on the surfaces of the Ni2+:SnO2 nanocrystals. The phase transition is reversed under air but not under N2, from which the microscopic identity of the activating defect is proposed to be interfacial oxygen vacancies.

  1. Quantum Oscillations in the Transverse Magnetoresistance (shubnikov - de Haas Effect) and Electronic Conduction in the Diluted Magnetic Semiconductor MERCURY(1-X)IRON(X)SELENIDE.

    NASA Astrophysics Data System (ADS)

    Vaziri, Mojtaba

    A study of the quantum oscillations in the transverse magneto- resistance (Shubnikov-de Haas effect) in oriented single crystals of Hg(,1-x)Fe(,x)Se with x (LESSTHEQ) 0.06 has been made as a function of tempera- ture (1.3 K (LESSTHEQ) T (LESSTHEQ) 35K) and for magnetic fields less than 5 Tesla. Significant(, )differences in the temperature dependence of the amp- litude of the oscillations for magnetic fields oriented along 110 , 111 , and 001 have been observed. The analysis of the data for (')H// 110 provide evidence for spin dependent scattering of the conduction electrons. Lineshape fits to the data allow estimates for the difference Dingle temperature (delta)T(,D) and the exchange enhanced effective g-factor as a function of temperature and magnetic field. It is concluded that some Fe ions, when incorporated in a HgSe host, exist in a magnetically active state. This result indicates the presence of Fe('+3) in addition to the Fe('+2) that might normally be expected in this material. In addition the amplitude of these oscillations as a function of the magnet angle for two different planes of rotation for x = 0.03 and x = 0.05 have been measured. The results clearly show two sets of zeros in the amplitude of the fundamental harmonic with completely different angular dependences. Low field zeros (H < 1 Tesla) have been identified that have a similar angular dependence as those reported for HgSe. The position of the zeros can not be explained by the combination of two different signals which result from lack of the inversion symmetry in the zinc-blende structure of the lattice. A distinct set of high field zeros (H > 1 Tesla) have also been observed which exhibit a different angular dependence than the zeros formed in HgSe. Finally, the variation in the carrier concentration as function of annealing conditions in HgSe, Hg(,1-x)Mn(,x)Se, and Hg(,1-x)Fe(,x)Se has been studied. Our results show that the carrier concentration in Hg(,1-x)Fe(,x)Se system with x

  2. Effects of hydrogen annealing and codoping (Mn, Fe, Ni, Ga, Y) of nanocrystalline Cu-doped ZnO dilute magnetic semiconductor

    NASA Astrophysics Data System (ADS)

    Bououdina, Mohamed; Aziz Dakhel, Aqeel

    2015-01-01

    Zinc oxide (ZnO) codoped with Cu and M ions (M = Mn, Fe, Ni, Ga, Y) powders were synthesised by simultaneous thermal co-decomposition of a mixture of zinc and metal complexes. The synthesised chemical formula for the prepared solid solution is Zn0.97Cu0.01M0.02O. X-ray diffraction (XRD) analysis confirms the formation of single nanocrystalline structure of the as-prepared powders, thus, both Cu and M ions were incorporated into ZnO lattice forming solid solutions. Magnetic measurements reveal that all the as-synthesised doped ZnO powders gained partial (RT-FM) properties but with different strength and BH-behaviour depends on the nature of the doping (M). Furthermore, H2 post-treatment was subsequently carried out and it was found that the observed RT-FM is enhanced. Very interestingly, in case of Ni dopant, the whole powder becomes completely ferromagnetic with coercivity (Hc), remanence (Mr) and saturation magnetisation (Ms) of 133.6 Oe, 1.086 memu/g and 4.959 memu/g, respectively. The value of Ms was increased by ~ 95% in comparison with as-prepared.

  3. Photoemission and magnetic circular dichroism studies of magnetic semiconductors

    NASA Astrophysics Data System (ADS)

    Fujimori, Atsushi

    2005-03-01

    Recently, a series of novel ferromagnetic semiconductors have been synthesized using MBE and related techniques and have attracted much attention because of unknown mechanisms of carrier-induced ferromagnetism and potential applications as "spin electronics" devices. Some new materials show ferromagnetism even well above room temperature. Photoemission spectroscopy has been used to study the d orbitals of the dilute transition-metal atoms, mostly Mn, and their hybridization with the host band states [1]. Soft x-ray absorption spectroscopy (XAS) and magnetic circular dichroism (MCD) at the transition-metal 2p-3d absorption edges are useful techniques to study the valence and spin states of the transition-metal atoms. Furthermore, since MCD has different sensitivities to the ferromagnetic and paramagnetic components at different temperatures and magnetic fileds, if the sample is a mixture of ferromagnetic and non-ferromagnetic transition- metal atoms, it can be used to separate the two components and to study their electronic structures. In this talk, results are presented for the prototypical diluted ferromagnetic semiconductor Ga1-xMnxAs [2] and the room-temperature ferromagnets Zn1-xCoxO and Ti1-xCoxO2.I acknowledge collaboration with Y. Ishida, J.-I. Hwang, M. Kobayashi, Y. Takeda, Y. Saitoh, J. Okamoto, T. Okane, Y. Muramatsu, K. Mamiya, T. Koide, A. Tanaka, M. Tanaka, Hayashi, S. Ohya, T. Kondo, H. Munekata, H. Saeki, H. Tabata, T. Kawai, Y. Matsumoto, H. Koinuma, T. Fukumura and M. Kawasaki. This work was supported by a Grant-in-Aid for Scientific Research in Priority Area "Semiconductor nano-spintronics" (14076209) from MEXT, Japan.1. J. Okabayashi et al., Phys. Rev. B 64, 125304 (2001).2. A. Fujimori et al., J. Electron Spectrosc. Relat. Phenom., in press.

  4. Electronic structures and magnetic properties of a II-II-V based diluted magnetic semiconductor Ba 1‑x K x (Cd 1‑y Mn y )2 As 2 with decoupled charge and spin doping

    NASA Astrophysics Data System (ADS)

    Yang, Juntao; Luo, Shijun; Cheng, ZhenXiang; Wang, Xiaotian; Xiong, Yongchen; Amel, Laref

    2016-10-01

    By using the density functional theory within Perdew–Burke–Ernzerh of generalized gradient approximation, the electronic structures and magnetic properties of {{Ba}}1-x{K}x{({{Cd}}1-y{{Mn}}y)}2{{As}}2 system were investigated. Undoped compound {{BaCd}}2{{As}}2 is a semiconductor crystallized with a hexagonal {{CaAl}}2{{Si}}2‑type structure. After local moments doping via isovalent (Cd2+, Mn2+) substitutions, {Ba}{({{Cd}}1-y{{Mn}}y)}2{{As}}2 is antiferromagnetic system, which is attributed to the superexchange interactions between the Mn2+ ions in the high spin state. With itinerant holes introduced via off-stoichiometry (Ba2+, {{{K}}}+) substitutions, {{Ba}}1-x{K}x{({{Cd}}1-y{{Mn}}y)}2{{As}}2 system (except for the system doped with the most nearest neighbor Mn-Mn pair) changes from antiferromagnetic to ferromagnetic, resulted from the indirect exchange interactions based on p ‑ d exchange coupling between As 4p and Mn 3d orbitals. Moreover, hypothetical supercells {{Ba}}10{K}2{{Cd}}22{{Mn}}2{{As}}24 with different lattice parameters under mechanical compression and expansion were calculated to study the effect of itinerant holes on the Curie temperature. Our results reveal that the {{Ba}}1-x{K}x{({{Cd}}1-y{{Mn}}y)}2{{As}}2 system with small lattice has more holes amount and better holes mobility, leading to a higher Curie temperature for the {{CaAl}}2{{Si}}2-type structure DMSs.

  5. Dilute ferromagnetic semiconductors prepared by the combination of ion implantation with pulse laser melting

    NASA Astrophysics Data System (ADS)

    Zhou, Shengqiang

    2015-07-01

    Combining semiconducting and ferromagnetic properties, dilute ferromagnetic semiconductors (DFS) have been under intensive investigation for more than two decades. Mn doped III-V compound semiconductors have been regarded as the prototype of DFS from both experimental and theoretic investigations. The magnetic properties of III-V:Mn can be controlled by manipulating free carriers via electrical gating, as for controlling the electrical properties in conventional semiconductors. However, the preparation of DFS presents a big challenge due to the low solubility of Mn in semiconductors. Ion implantation followed by pulsed laser melting (II-PLM) provides an alternative to the widely used low-temperature molecular beam epitaxy (LT-MBE) approach. Both ion implantation and pulsed-laser melting occur far enough from thermodynamic equilibrium conditions. Ion implantation introduces enough dopants and the subsequent laser pulse deposit energy in the near-surface region to drive a rapid liquid-phase epitaxial growth. Here, we review the experimental study on preparation of III-V:Mn using II-PLM. We start with a brief description about the development of DFS and the physics behind II-PLM. Then we show that ferromagnetic GaMnAs and InMnAs films can be prepared by II-PLM and they show the same characteristics of LT-MBE grown samples. Going beyond LT-MBE, II-PLM is successful to bring two new members, GaMnP and InMnP, into the family of III-V:Mn DFS. Both GaMnP and InMnP films show the signature of DFS and an insulating behavior. At the end, we summarize the work done for Ge:Mn and Si:Mn using II-PLM and present suggestions for future investigations. The remarkable advantage of II-PLM approach is its versatility. In general, II-PLM can be utilized to prepare supersaturated alloys with mismatched components.

  6. Introducing and manipulating magnetic dopant exchange interactions in semiconductor nanowires

    NASA Astrophysics Data System (ADS)

    Hegde, Manu; Hosein, Ian D.; Sabergharesou, Tahereh; Farvid, Shokouh S.; Radovanovic, Pavle V.

    2013-09-01

    The ability to control both spin and charge degrees of freedom in semiconductor nanostructrures is at heart of spintronic and quantum information technologies. Magnetically-doped semiconductor nanowires have emerged as a promising platform for spintronics, which warrants the exploration of their synthesis, electronic structure, and magnetic properties. Here we demonstrate the preparation of manganese-doped GaN and SnO2 nanowires by chemical vapor deposition and solvothermal methods, respectively. The investigation of both systems by electron microscopy and x-ray absorption spectroscopy at ensemble and single nanowire levels indicates that manganese dopants exist in a dual oxidation state, Mn2+ and Mn3+, with Mn2+ being the majority species. X-ray magnetic circular dichroism studies of individual nanowires suggest ferromagnetic interactions of manganese dopants, and the nanowire orientation-dependent magnetization owing to the magnetocrystalline anisotropy. The results of these studies demonstrate quantitative determination of the dopant electronic structure at the molecular level, and allow for a prediction of the magnetic properties of diluted magnetic semiconductor nanowires based on their orientation and geometry.

  7. Lieb-Mattis ferrimagnetism in magnetic semiconductors

    NASA Astrophysics Data System (ADS)

    Kuzian, R. O.; Richter, J.; Kuz'min, M. D.; Hayn, R.

    2016-06-01

    We show the possibility of long-range ferrimagnetic ordering with a saturation magnetization of ˜1 μB per spin for arbitrarily low concentration of magnetic impurities in semiconductors, provided that the impurities form a superstructure satisfying the conditions of the Lieb-Mattis theorem. Explicit examples of such superstructures are given for the wurtzite lattice, and the temperature of ferrimagnetic transition is estimated from a high-temperature expansion. Exact diagonalization studies show that small fragments of the structure exhibit enhanced magnetic response and isotropic superparamagnetism at low temperatures. A quantum transition in a high magnetic field is considered and similar superstructures in cubic semiconductors are discussed as well.

  8. Diluted II-VI oxide semiconductors with multiple band gaps.

    PubMed

    Yu, K M; Walukiewicz, W; Wu, J; Shan, W; Beeman, J W; Scarpulla, M A; Dubon, O D; Becla, P

    2003-12-12

    We report the realization of a new mult-band-gap semiconductor. Zn(1-y)Mn(y)OxTe1-x alloys have been synthesized using the combination of oxygen ion implantation and pulsed laser melting. Incorporation of small quantities of isovalent oxygen leads to the formation of a narrow, oxygen-derived band of extended states located within the band gap of the Zn(1-y)Mn(y)Te host. When only 1.3% of Te atoms are replaced with oxygen in a Zn0.88Mn0.12Te crystal the resulting band structure consists of two direct band gaps with interband transitions at approximately 1.77 and 2.7 eV. This remarkable modification of the band structure is well described by the band anticrossing model. With multiple band gaps that fall within the solar energy spectrum, Zn(1-y)Mn(y)OxTe1-x is a material perfectly satisfying the conditions for single-junction photovoltaics with the potential for power conversion efficiencies surpassing 50%.

  9. New diluted ferromagnetic semiconductor with Curie temperature up to 180 K and isostructural to the '122' iron-based superconductors.

    PubMed

    Zhao, K; Deng, Z; Wang, X C; Han, W; Zhu, J L; Li, X; Liu, Q Q; Yu, R C; Goko, T; Frandsen, B; Liu, Lian; Ning, Fanlong; Uemura, Y J; Dabkowska, H; Luke, G M; Luetkens, H; Morenzoni, E; Dunsiger, S R; Senyshyn, A; Böni, P; Jin, C Q

    2013-01-01

    Diluted magnetic semiconductors have received much attention due to their potential applications for spintronics devices. A prototypical system (Ga,Mn)As has been widely studied since the 1990s. The simultaneous spin and charge doping via hetero-valent (Ga(3+),Mn(2+)) substitution, however, resulted in severely limited solubility without availability of bulk specimens. Here we report the synthesis of a new diluted magnetic semiconductor (Ba(1-x)K(x))(Zn(1-y)Mn(y))(2)As(2), which is isostructural to the 122 iron-based superconductors with the tetragonal ThCr(2)Si(2) (122) structure. Holes are doped via (Ba(2+), K(1+)) replacements, while spins via isovalent (Zn(2+),Mn(2+)) substitutions. Bulk samples with x=0.1-0.3 and y=0.05-0.15 exhibit ferromagnetic order with T(C) up to 180 K, which is comparable to the highest T(C) for (Ga,Mn)As and significantly enhanced from T(C) up to 50 K of the '111'-based Li(Zn,Mn)As. Moreover, ferromagnetic (Ba,K)(Zn,Mn)(2)As(2) shares the same 122 crystal structure with semiconducting BaZn(2)As(2), antiferromagnetic BaMn(2)As(2) and superconducting (Ba,K)Fe(2)As(2), which makes them promising for the development of multilayer functional devices.

  10. Defect-Rich Dopant-Free ZrO2 Nanostructures with Superior Dilute Ferromagnetic Semiconductor Properties.

    PubMed

    Rahman, Md Anisur; Rout, S; Thomas, Joseph P; McGillivray, Donald; Leung, Kam Tong

    2016-09-14

    Control of the spin degree of freedom of an electron has brought about a new era in spin-based applications, particularly spin-based electronics, with the potential to outperform the traditional charge-based semiconductor technology for data storage and information processing. However, the realization of functional spin-based devices for information processing remains elusive due to several fundamental challenges such as the low Curie temperature of group III-V and II-VI semiconductors (<200 K), and the low spin-injection efficiencies of existing III-V, II-VI, and transparent conductive oxide semiconductors in a multilayer device structure, which are caused by precipitation and migration of dopants from the host layer to the adjacent layers. Here, we use catalyst-assisted pulsed laser deposition to grow, for the first time, oxygen vacancy defect-rich, dopant-free ZrO2 nanostructures with high TC (700 K) and high magnetization (5.9 emu/g). The observed magnetization is significantly greater than both doped and defect-rich transparent conductive oxide nanomaterials reported to date. We also provide the first experimental evidence that it is the amounts and types of oxygen vacancy defects in, and not the phase of ZrO2 that control the ferromagnetic order in undoped ZrO2 nanostructures. To explain the origin of ferromagnetism in these ZrO2 nanostructures, we hypothesize a new defect-induced bound polaron model, which is generally applicable to other defect-rich, dopant-free transparent conductive oxide nanostructures. These results provide new insights into magnetic ordering in undoped dilute ferromagnetic semiconductor oxides and contribute to the design of exotic magnetic and novel multifunctional materials. PMID:27533277

  11. Defect-Rich Dopant-Free ZrO2 Nanostructures with Superior Dilute Ferromagnetic Semiconductor Properties.

    PubMed

    Rahman, Md Anisur; Rout, S; Thomas, Joseph P; McGillivray, Donald; Leung, Kam Tong

    2016-09-14

    Control of the spin degree of freedom of an electron has brought about a new era in spin-based applications, particularly spin-based electronics, with the potential to outperform the traditional charge-based semiconductor technology for data storage and information processing. However, the realization of functional spin-based devices for information processing remains elusive due to several fundamental challenges such as the low Curie temperature of group III-V and II-VI semiconductors (<200 K), and the low spin-injection efficiencies of existing III-V, II-VI, and transparent conductive oxide semiconductors in a multilayer device structure, which are caused by precipitation and migration of dopants from the host layer to the adjacent layers. Here, we use catalyst-assisted pulsed laser deposition to grow, for the first time, oxygen vacancy defect-rich, dopant-free ZrO2 nanostructures with high TC (700 K) and high magnetization (5.9 emu/g). The observed magnetization is significantly greater than both doped and defect-rich transparent conductive oxide nanomaterials reported to date. We also provide the first experimental evidence that it is the amounts and types of oxygen vacancy defects in, and not the phase of ZrO2 that control the ferromagnetic order in undoped ZrO2 nanostructures. To explain the origin of ferromagnetism in these ZrO2 nanostructures, we hypothesize a new defect-induced bound polaron model, which is generally applicable to other defect-rich, dopant-free transparent conductive oxide nanostructures. These results provide new insights into magnetic ordering in undoped dilute ferromagnetic semiconductor oxides and contribute to the design of exotic magnetic and novel multifunctional materials.

  12. (Magnetic properties of doped semiconductors)

    SciTech Connect

    Not Available

    1990-01-01

    Research continued on the transport behavior of doped semiconductors on both sides of the metal-insulator transition, and the approach to the transition from both the insulating and the metallic side. Work is described on magneto resistance of a series of metallic Si:B samples and CdSe. (CBS)

  13. Magnetization and Hysteresis of Dilute Magnetic-Oxide Nanoparticles

    NASA Astrophysics Data System (ADS)

    Skomski, Ralph; Balamurugan, B.; Sellmyer, D. J.

    2014-03-01

    Real-structure imperfections in dilute magnetic oxides tend to create small concentrations of local magnetic moments that are coupled by fairly long-range exchange interactions, mediated by p-electrons. The robustness of these interactions is caused by the strong overlap of the p orbitals, as contrasted to the much weaker interatomic exchange involving iron-series 3d electrons. The net exchange between defect moments can be positive or negative, which gives rise to spin structures with very small net moments. Similarly, the moments exhibit magnetocrystalline anisotropy, reinforced by electron hopping to and from 3d states and generally undergoing some random-anuisotropy averaging. Since the coercivity scales as 2K1/M and M is small, this creates pronounced and -- in thin films -- strongly anisotropic hysteresis loops. In finite systems with N moments, both K1 and M are reduced by a factor of order N1/2 due to random anisotropy and moment compensation, respectively, so that that typical coercivities are comparable to bulk magnets. Thermal activation readily randomizes the net moment of small oxide particles, so that the moment is easier to measure in compacted or aggregated particle ensembles. This research is supported by DOE (BES).

  14. Charge-controlled magnetism in colloidal doped semiconductor nanocrystals

    NASA Astrophysics Data System (ADS)

    Gamelin, Daniel

    2010-03-01

    Electrical control over the magnetic states of doped semiconductor nanostructures could enable new spin-based information processing technologies, but the relatively weak interactions between dopants and charge carriers have so far suggested that such gated magnetism will be limited to cryogenic temperatures. This talk will describe the observation of a large, reversible, room-temperature magnetic response to charge injection in free-standing colloidal ZnO nanocrystals doped with Mn(II) ions. Injected electrons are found to delocalize throughout the entire nanocrystal, and to activate new ferromagnetic Mn(II)-Mn(II) exchange interactions that are strong enough to overcome antiferromagnetic coupling between nearest-neighbor Mn(II) ions, making the full magnetic moments of all dopants observable upon charging. Removal of the electron causes the system to revert to its original form, allowing reversible charge-controlled manipulation of room-temperature nanocrystal magnetism. The physical properties of these charged, doped nanocrystals are directly analogous to those of bound magnetic poltroons (BMPs) postulated to underlie high-temperature ferromagnetic ordering in the bulk forms of this and related diluted magnetic oxides. This discovery of charge-controlled magnetism in free-standing colloidal nanocrystals that is large, reversible, and stable at room temperature presents new opportunities for fundamental studies and raises interesting possibilities for the development of spin-based information processing technologies from solution-processable semiconductor nanostructures. Related references: Ochsenbein, S. T.; Feng, Y.; Whitaker, K. M.; Badaeva, E.; Liu, W. K.; Li, X.; Gamelin, D. R., Nature Nanotechnology, 4, 681 (2009); Liu, W. K.; Whitaker, K. M.; Kittilstved, K. R.; Gamelin, D. R., J. Am. Chem. Soc., 128, 3910 (2006).

  15. Atomic-scale detection of magnetic impurity interactions in bulk semiconductors

    NASA Astrophysics Data System (ADS)

    Geisler, Benjamin; Kratzer, Peter

    2015-09-01

    We demonstrate on the basis of ab initio simulations how passivated semiconductor surfaces can be exploited to study bulklike interaction properties and wave functions of magnetic impurities on the atomic scale with conventional and spin-polarized scanning tunneling microscopy. By applying our approach to the case of 3 d transition metal impurities close to the H /Si (111 ) surface, we show exemplarily that their wave functions in Si are less extended than for Mn in GaAs, thus obstructing ferromagnetism in Si. Finally, we discuss possible applications of this method to other dilute magnetic semiconductors.

  16. Unreachable glass transition in dilute dipolar magnet.

    PubMed

    Biltmo, A; Henelius, P

    2012-01-01

    In magnetic systems the combined effects of disorder and frustration may cause the moments to freeze into a disordered state at a spin-glass transition. Recent experiments have shown that the rare earth compound LiHo(0.045)Y(0.955)F(4) freezes, but that the transition is unreachable because of dynamics that are 10(7) times slower than in ordinary spin-glass materials. This conclusion refutes earlier investigations reporting a speed-up of the dynamics into an exotic anti-glass phase caused by entanglement of quantum dipoles. Here we present a theory, backed by numerical simulations, which describes the material in terms of classical dipoles governed by Glauber dynamics. The dipoles freeze and we find that the ultra-slow dynamics are caused by rare, strongly ordered clusters, which give rise to a previously predicted, but hitherto unobserved, Griffths phase between the paramagnetic and spin-glass phases. In addition, the hyperfine interaction creates a high energy barrier to flipping the electronic spin, resulting in a clear signature in the dynamic correlation function.

  17. Unreachable glass transition in dilute dipolar magnet

    NASA Astrophysics Data System (ADS)

    Biltmo, A.; Henelius, P.

    2012-05-01

    In magnetic systems the combined effects of disorder and frustration may cause the moments to freeze into a disordered state at a spin-glass transition. Recent experiments have shown that the rare earth compound LiHo0.045Y0.955F4 freezes, but that the transition is unreachable because of dynamics that are 107 times slower than in ordinary spin-glass materials. This conclusion refutes earlier investigations reporting a speed-up of the dynamics into an exotic anti-glass phase caused by entanglement of quantum dipoles. Here we present a theory, backed by numerical simulations, which describes the material in terms of classical dipoles governed by Glauber dynamics. The dipoles freeze and we find that the ultra-slow dynamics are caused by rare, strongly ordered clusters, which give rise to a previously predicted, but hitherto unobserved, Griffths phase between the paramagnetic and spin-glass phases. In addition, the hyperfine interaction creates a high energy barrier to flipping the electronic spin, resulting in a clear signature in the dynamic correlation function.

  18. Semiconductor Crystal Growth in Static and Rotating Magnetic fields

    NASA Technical Reports Server (NTRS)

    Volz, Martin

    2004-01-01

    Magnetic fields have been applied during the growth of bulk semiconductor crystals to control the convective flow behavior of the melt. A static magnetic field established Lorentz forces which tend to reduce the convective intensity in the melt. At sufficiently high magnetic field strengths, a boundary layer is established ahead of the solid-liquid interface where mass transport is dominated by diffusion. This can have a significant effect on segregation behavior and can eliminate striations in grown crystals resulting from convective instabilities. Experiments on dilute (Ge:Ga) and solid solution (Ge-Si) semiconductor systems show a transition from a completely mixed convective state to a diffusion-controlled state between 0 and 5 Tesla. In HgCdTe, radial segregation approached the diffusion limited regime and the curvature of the solid-liquid interface was reduced by a factor of 3 during growth in magnetic fields in excess of 0.5 Tesla. Convection can also be controlled during growth at reduced gravitational levels. However, the direction of the residual steady-state acceleration vector can compromise this effect if it cannot be controlled. A magnetic field in reduced gravity can suppress disturbances caused by residual transverse accelerations and by random non-steady accelerations. Indeed, a joint program between NASA and the NHMFL resulted in the construction of a prototype spaceflight magnet for crystal growth applications. An alternative to the suppression of convection by static magnetic fields and reduced gravity is the imposition of controlled steady flow generated by rotating magnetic fields (RMF)'s. The potential benefits of an RMF include homogenization of the melt temperature and concentration distribution, and control of the solid-liquid interface shape. Adjusting the strength and frequency of the applied magnetic field allows tailoring of the resultant flow field. A limitation of RMF's is that they introduce deleterious instabilities above a

  19. Magnetoresistive properties of nanostructured magnetic metals, manganites, and magnetic semiconductors

    NASA Astrophysics Data System (ADS)

    Solin, N. I.; Romashev, L. N.; Naumov, S. V.; Saranin, A. A.; Zotov, A. V.; Olyanich, D. A.; Kotlyar, V. G.; Utas, O. A.

    2016-02-01

    We consider methods for controlling magnetoresistive parameters of magnetic metal superlattices, manganites, and magnetic semiconductors. By reducing the thickness of ferromagnetic layers in superlattices (e.g., Fe layers in Fe/Cr superlattices), it is possible to form superparamagnetic clustered-layered nanostructures with a magnetoresistance weakly depending on the direction of the external magnetic field, which is very important for applications of such type of materials. Producing Mn vacancies and additionally annealing lanthanum manganites in the oxygen atmosphere, it is possible to increase their magnetoresistance by more than four orders of magnitude. By changing the thickness of p- n junction in the structure of ferromagnetic semiconductors, their magnetoresistance can be increased by 2-3 orders of magnitude.

  20. Synthesis and Characterization of Co-doped ZnO Dilute Magnetic Semiconducting Nanorods

    NASA Astrophysics Data System (ADS)

    Das, N.; Khanra, S.; Bhamidipati, S.; Manivannan, K.; Kahol, P.; Ghosh, K.

    2012-02-01

    Transition-metal doped ZnO dilute magnetic semiconducting nanomaterials are considered as ideal systems for carrying out research in the field of spintronics as they can successfully combine magnetism and electronics in a single substance. ZnO is a wurtzite-type wide-bandgap semiconductor of the II-VI semiconductor group with band gap energy of 3.37 eV. Hydrothermal synthesis of undoped ZnO and Co-doped ZnO nanorods is carried out using aqueous solutions of Zn(NO3)2.6H2O, Co(C2H3OO)2.4 H2O, and using NH4OH as hydrolytic catalyst. Nanomaterials of different sizes and shapes were synthesized by varying the process parameters such as molarity (0.15M, 0.3M, 0.5M) and pH (8-11) of the precursors, growth temperature (130^oC), and annealing time during the hydrothermal Process. Structural, morphological, optical and magnetic properties are studied using various techniques such as XRD, SEM, UV-vis spectroscopy, and SQUID magnetometer. XRD and SEM studies reveal nanorods with hexagonal wurtzite structure with length in the range of 200 to 500 nm, and cross section in the range of 30 to 60 nm. Detailed structural, optical, and magnetic properties will be discussed in this presentation.

  1. Magnetic Damping of Solid Solution Semiconductor Alloys

    NASA Technical Reports Server (NTRS)

    Szofran, Frank R.; Benz, K. W.; Corell, Arne; Dold, Peter; Cobb, Sharon D.; Volz, Martin P.; Motakef, Shariar

    1998-01-01

    The objective of this study is to conduct the Earth-based research sufficient to successfully propose a flight experiment (1) to experimentally test the validity of the modeling predictions applicable to the magnetic damping of convective flows in conductive melts as this applies to the bulk growth of solid solution semiconducting materials in the reduced gravitational levels available in low Earth orbit and (2) to assess the effectiveness of steady magnetic fields in reducing the fluid flows occurring in these materials during space processing. To achieve the objectives of this investigation, we are carrying out a comprehensive program in the Bridgman and floating-zone configurations using the solid solution alloy system Ge-Si. This alloy system was chosen because it has been studied extensively in environments that have not simultaneously included both low gravity and an applied magnetic field. Also, all compositions have a high electrical conductivity, and the materials parameters permit high growth rates compared to many other commonly studied alloy semiconductors. An important supporting investigation is determining the role, if any, that thermoelectromagnetic convection (TEMC) plays during growth of these materials in a magnetic field. Some compositional anomalies observed by us in magnetic grown crystals can only be explained by TEMC; this has significant implications for the deployment of a Magnetic Damping Furnace in space. This effect will be especially important in solid solutions where the growth interface is, in general, neither isothermal nor isoconcentrational. It could be important in single melting point materials, also, if faceting takes place producing a non-isothermal interface.

  2. Angular dependent study on spin transport in magnetic semiconductor heterostructures with Dresselhaus spin-orbit interaction

    NASA Astrophysics Data System (ADS)

    Mirzanian, S. M.; Shokri, A. A.; Mikaili Agah, K.; Elahi, S. M.

    2015-09-01

    We investigate theoretically the effects of Dresselhaus spin-orbit coupling (DSOC) on the spin-dependent current and shot noise through II-VI diluted magnetic semiconductor/nonmagnetic semiconductor (DMS/NMS) barrier structures. The calculation of transmission probability is based on an effective mass quantum-mechanical approach in the presence of an external magnetic field applied along the growth direction of the junction and also applied voltage. We also study the dependence of spin-dependent properties on external magnetic field and relative angle between the magnetizations of two DMS layers in CdTe/CdMnTe heterostructures by including the DSOC effect. The results show that the DSOC has great different influence on transport properties of electrons with spin up and spin down in the considered system and this aspect may be utilized in designing new spintronics devices.

  3. Three-dimensional Heisenberg critical behavior in the highly disordered dilute ferromagnetic semiconductor (Ga,Mn)As

    NASA Astrophysics Data System (ADS)

    Wang, M.; Marshall, R. A.; Edmonds, K. W.; Rushforth, A. W.; Campion, R. P.; Gallagher, B. L.

    2016-05-01

    We present detailed studies of critical behavior in the strongly site-disordered dilute ferromagnetic semiconductor (Ga,Mn)As. (Ga,Mn)As has a low saturation magnetization and relatively strong magnetocrystalline anisotropy. This combination of properties inhibits domain formation, thus removing a principal experimental difficulty in determining the critical coefficients β and γ . We find that there are still a large number of problems to overcome in terms of measurement procedures and methods of analysis. In particular, the combined effects of disorder and inhomogeneity limit the accessible critical region. However, we find that accurate and reproducible values of the critical exponents β and γ can be obtained from Kouvel-Fisher plots of remanent magnetization and magnetic susceptibility for our (Ga,Mn)As samples. The values of β and γ obtained are consistent with those of the three-dimensional Heisenberg class, despite the very strong disorder present in this system, and they are inconsistent with mean field behavior. Log-log plots of M (H ) data for our samples are consistent with the three-dimensional Heisenberg value of the critical exponent δ , but accurate values of δ could not be obtained for our samples from these plots. We also find that accurate values of the critical exponent α could not be obtained by fitting to the measured temperature derivative of resistivity for our samples. We find that modified Arrott plots and scaling plots are not a practical way to determine the universality class or critical exponents, though they are found to be in better agreement with three-dimensional Heisenberg values than mean field values. Below the critical temperature range, we find that the magnetization shows power-law behavior down to a reduced temperature of t ˜0.5 , with a critical exponent β ˜0.4 , a value appreciably lower than the mean field value of β =0.5 . At lower temperatures, Bloch 3/2 law behavior is observed due to magnons.

  4. Multifractality in dilute magnetorheological fluids under an oscillating magnetic field.

    PubMed

    Moctezuma, R E; Arauz-Lara, J L; Donado, F

    2014-12-01

    A study of the multifractal characteristics of the structure formed by magnetic particles in a dilute magnetorheological fluid is presented. A quasi-two-dimensional magnetorheological fluid sample is simultaneously subjected to a static magnetic field and a sinusoidal magnetic field transverse to each other. We analyzed the singularity spectrum f(α) and the generalized dimension D(q) of the whole structure to characterize the distribution of the aggregates under several conditions of particle concentration, magnetic field intensities, and liquid viscosity. We also obtained the fractal dimension D(g), calculated from the radius of gyration of the chains, to describe the internal distribution of the particles. We present a thermodynamic interpretation of the multifractal analysis, and based on this, we discussed the characteristics of the structure formed by the particles and its relation with previous studies of the average chain length. We have found that this method is useful to quantitatively describe the structure of magnetorheological fluids, especially in systems with high particle concentration where the aggregates are more complex than simple chains or columns. PMID:25615089

  5. Integrated semiconductor-magnetic random access memory system

    NASA Technical Reports Server (NTRS)

    Katti, Romney R. (Inventor); Blaes, Brent R. (Inventor)

    2001-01-01

    The present disclosure describes a non-volatile magnetic random access memory (RAM) system having a semiconductor control circuit and a magnetic array element. The integrated magnetic RAM system uses CMOS control circuit to read and write data magnetoresistively. The system provides a fast access, non-volatile, radiation hard, high density RAM for high speed computing.

  6. Optimal doping control of magnetic semiconductors via subsurfactant epitaxy

    SciTech Connect

    Zeng, Changgan; Zhang, Zhenyu; van Benthem, Klaus; Chisholm, Matthew F; Weitering, Harm H

    2008-02-01

    Dilute magnetic semiconductors (DMS) with high ferromagnetic ordering temperatures (T{sub c}) have vast potential for advancing spin-based electronics or 'spintronics'. To date, achieving high-T{sub c} DMS typically required doping levels of order 5%. Such high doping levels inevitably compromise the structural homogeneity and carrier mobility of the DMS. Here, we establish 'subsurfactant epitaxy' as a novel kinetic pathway for synthesizing Mn-doped germanium with T{sub c} much higher than room temperature, at dramatically reduced doping levels. This is accomplished by optimal control of the diffusion kinetics of the dopant atoms near the growth front in two separate deposition steps. The first involves a submonolayer dose of Mn on Ge(100) at low temperature, which populates subsurface interstitial sites with Mn while suppressing lateral Mn diffusion and clustering. The second step involves epitaxial growth of Ge at elevated temperature, taking advantage of the strong floating ability of the interstitial Mn dopants towards the newly defined subsurface sites at the growth front. Most remarkably, the Mn dopants trapped inside the film are uniformly distributed at substitutional sites, and the resulting film exhibits ferromagnetism above 400 K at the nominal doping level of only 0.2%.

  7. Evolving Biomolecular Control and Assembly of Semiconductor and Magnetic Nanostructures

    NASA Astrophysics Data System (ADS)

    Belcher, Angela

    2003-03-01

    We are investigating the principles of natural biological molecular recognition in materials and developing new methods to pattern useful non-biological electronic and magnetic materials on new length scales. A peptide combinatorial approach has been employed to identify proteins that select for and specifically bind to inorganic structures such as semiconductor wafers and semiconductor and magnetic nanoparticles. This approach utilizes the inherent self-organizing, highly selective properties of biologically derived molecules. We are currently investigating peptide recognition and interaction with III-V and II-VI semiconductor materials and magnetic materials. These peptides are being used to grow nanoparticles and nanowires of specific crystallographic structure and orientation. Using these molecular interactions and specific nanoparticles, we are organizing organic/inorganic hybrid materials into supramolecular architectures.

  8. Ultrafast Control of Magnetism in Ferromagnetic Semiconductors via Photoexcited Transient Carriers

    SciTech Connect

    Cotoros, Ingrid A.

    2008-12-01

    The field of spintronics offers perspectives for seamless integration of coupled and inter-tunable electrical and magnetic properties in a single device. For integration of the spin degree of freedom with current electronic technology, new semiconductors are needed that show electrically-tunable magnetic properties at room temperature and above. Dilute magnetic semiconductors derived from III-V compounds, like GaMnAs and InMnAs, show coupled and tunable magnetic, transport, and optical properties, due to the fact that their ferromagnetism is hole-mediated. These unconventional materials are ideal systems for manipulating the magnetic order by changing the carrier polarization, population density, and energy band distribution of the complementary subsystem of holes. This is the main theme we cover in this thesis. In particular, we develop a unique setup by use of ultraviolet pump, near-infrared probe femtosecond laser pulses, that allows for magneto-optical Kerr effect (MOKE) spectroscopy experiments. We photo-excite transient carriers in our samples, and measure the induced transient magnetization dynamics. One set of experiments performed allowed us to observe for the first time enhancement of the ferromagnetic order in GaMnAs, on an ultrafast time scale of hundreds of picoseconds. The corresponding transient increase of Curie temperature (Tc, the temperature above which a ferromagnetic material loses its permanent magnetism) of about 1 K for our experimental conditions is a very promising result for potential spintronics applications, especially since it is seconded by observation of an ultrafast ferromagnetic to paramagnetic phase transition above Tc. In a different set of experiments, we "write" the magnetization in a particular orientation in the sample plane. Using an ultrafast scheme, we alter the distribution of holes in the system and detect signatures of the particular memory state in the subsequent magnetization dynamics, with unprecedented hundreds of

  9. TOPICAL REVIEW: Electrical magnetization reversal in ferromagnetic III V semiconductors

    NASA Astrophysics Data System (ADS)

    Chiba, D.; Matsukura, F.; Ohno, H.

    2006-07-01

    Introduction of a high concentration of manganese in III-V semiconductors, such as InAs and GaAs, results in carrier-induced ferromagnetism, which allows us to integrate ferromagnetism in nonmagnetic heterostructures and which modifies their magnetic properties through electric-field control of carrier concentration. The properties of ferromagnetism can in many cases be semi-quantitatively understood by the p-d Zener model, which is qualitatively different from conventional ferromagnetic metals. These ferromagnetic III-V semiconductors also offer the unique opportunity of examining spin-dependent phenomena observed so far only in metallic systems. Here, we review our experimental study on electrical manipulation of magnetization in these ferromagnetic III-V semiconductors. We first describe the results of electrically assisted magnetization reversal in ferromagnetic semiconductor (In, Mn)As field-effect transistor structures. The coercivity as well as ferromagnetic transition temperature can be controlled through the modification of carrier concentration by applied electric fields in a gated structure. We then present electrical magnetization reversal by spin-transfer torque exerted by spin-polarized currents at low threshold current density (~105 A cm-2) in (Ga, Mn)As-based magnetic tunnel junctions.

  10. Cobalt nanoparticles doped emaraldine salt of polyaniline: A promising room temperature magnetic semiconductor

    NASA Astrophysics Data System (ADS)

    Hatamie, Shadie; Kulkarni, M. V.; Kulkarni, S. D.; Ningthoujam, R. S.; Vatsa, R. K.; Kale, S. N.

    2010-12-01

    Incorporation of magnetic nanoparticles in polymers with organic functional groups working as semiconducting substrate is of immense interest in the field of dilute magnetic semiconductors (DMS) and spintronics. In this article we report on synthesis and evaluation of dilutely doped (0-10 wt%) cobalt nanoparticles in emaraldine salt (ES) of polyaniline in the presence of dodecyl benzene sulfonic acid (DBSA) and p-toluene sulfonic acid (p-TSA) using a sonochemical-assisted-reduction approach as a possible DMS candidate. The X-ray diffraction pattern and high resolution transmission electron microscopy (HRTEM) image show the ES to be polycrystalline, in which 10 nm sized Co nanoparticles get embedded in its FCC structural form. From Fourier transform infrared (FT-IR) and UV-visible (UV-vis) spectroscopy studies, it is predicted that cobalt particles get electrostatically bound to the specific SO3- ion sites of ES, thereby modifying torsional degrees of freedom of the system. The applied field dependent magnetization study shows that the sample exhibits hysteresis loop with a minimal doping of 3 wt% of Co nanoparticles and increases with the amount of Co nanoparticles in ES due to dipolar interaction. The electron transport data show that with increase in Co wt% there is a gradual shift from ohmic to non-ohmic response to the sample bias, accompanied by opening of electrical hysteresis and an increased resistance. The non-linear response of higher doped systems has been attributed to the combination of direct and Fowler-Nordheim tunneling phenomena in these systems. Persistence of optical and transport properties of the polymer, with an introduction of magnetic moment in the system, envisages the system to be a fine magnetic semiconductor.

  11. Ba(Zn1−2xMnxCux)2As2: A Bulk Form Diluted Ferromagnetic Semiconductor with Mn and Cu Codoping at Zn Sites

    PubMed Central

    Man, Huiyuan; Guo, Shengli; Sui, Yu; Guo, Yang; Chen, Bin; Wang, Hangdong; Ding, Cui; Ning, F.L.

    2015-01-01

    We report the synthesis and characterization of a bulk form diluted magnetic semiconductor Ba(Zn1−2xMnxCux)2As2 with the crystal structure identical to that of “122” family iron based superconductors and the antiferromagnet BaMn2As2. No ferromagnetic order occurs with (Zn, Mn) or (Zn, Cu) substitution in the parent compound BaZn2As2. Only when Zn is substituted by both Mn and Cu simultaneously, can the system undergo a ferromagnetic transition below TC ~ 70 K, followed by a magnetic glassy transition at Tf  ~ 35 K. AC susceptibility measurements for Ba(Zn0.75Mn0.125Cu0.125)2As2 reveal that Tf strongly depends on the applied frequency with and a DC magnetic field dependence of , demonstrating that a spin glass transition takes place at Tf. As large as −53% negative magnetoresistance has been observed in Ba(Zn1−2xMnxCux)2As2, enabling its possible application in memory devices. PMID:26492957

  12. Ba(Zn(1-2x)MnxCux)2As2: A Bulk Form Diluted Ferromagnetic Semiconductor with Mn and Cu Codoping at Zn Sites.

    PubMed

    Man, Huiyuan; Guo, Shengli; Sui, Yu; Guo, Yang; Chen, Bin; Wang, Hangdong; Ding, Cui; Ning, F L

    2015-10-23

    We report the synthesis and characterization of a bulk form diluted magnetic semiconductor Ba(Zn(1-2x)MnxCux)2As2 (0.025 ≤ x ≤ 0.2) with the crystal structure identical to that of "122" family iron based superconductors and the antiferromagnet BaMn2As2. No ferromagnetic order occurs with (Zn, Mn) or (Zn, Cu) substitution in the parent compound BaZn2As2. Only when Zn is substituted by both Mn and Cu simultaneously, can the system undergo a ferromagnetic transition below TC ~ 70 K, followed by a magnetic glassy transition at Tf  ~ 35 K. AC susceptibility measurements for Ba(Zn0.75Mn0.125Cu0.125)2As2 reveal that Tf strongly depends on the applied frequency with [formula in text] and a DC magnetic field dependence of [formula in text], demonstrating that a spin glass transition takes place at Tf. As large as -53% negative magnetoresistance has been observed in Ba(Zn(1-2x)MnxCux)2As2, enabling its possible application in memory devices.

  13. Ba(Zn1-2xMnxCux)2As2: A Bulk Form Diluted Ferromagnetic Semiconductor with Mn and Cu Codoping at Zn Sites

    NASA Astrophysics Data System (ADS)

    Man, Huiyuan; Guo, Shengli; Sui, Yu; Guo, Yang; Chen, Bin; Wang, Hangdong; Ding, Cui; Ning, F. L.

    2015-10-01

    We report the synthesis and characterization of a bulk form diluted magnetic semiconductor Ba(Zn1-2xMnxCux)2As2 with the crystal structure identical to that of “122” family iron based superconductors and the antiferromagnet BaMn2As2. No ferromagnetic order occurs with (Zn, Mn) or (Zn, Cu) substitution in the parent compound BaZn2As2. Only when Zn is substituted by both Mn and Cu simultaneously, can the system undergo a ferromagnetic transition below TC ~ 70 K, followed by a magnetic glassy transition at Tf  ~ 35 K. AC susceptibility measurements for Ba(Zn0.75Mn0.125Cu0.125)2As2 reveal that Tf strongly depends on the applied frequency with and a DC magnetic field dependence of , demonstrating that a spin glass transition takes place at Tf. As large as -53% negative magnetoresistance has been observed in Ba(Zn1-2xMnxCux)2As2, enabling its possible application in memory devices.

  14. Magnetic Damping of Solid Solution Semiconductor Alloys

    NASA Technical Reports Server (NTRS)

    Szofran, Frank R.; Benz, K. W.; Croell, Arne; Dold, Peter; Cobb, Sharon D.; Volz, Martin P.; Motakef, Shariar

    1999-01-01

    The objective of this study is to: (1) experimentally test the validity of the modeling predictions applicable to the magnetic damping of convective flows in electrically conductive melts as this applies to the bulk growth of solid solution semiconducting materials; and (2) assess the effectiveness of steady magnetic fields in reducing the fluid flows occurring in these materials during processing. To achieve the objectives of this investigation, we are carrying out a comprehensive program in the Bridgman and floating-zone configurations using the solid solution alloy system Ge-Si. This alloy system has been studied extensively in environments that have not simultaneously included both low gravity and an applied magnetic field. Also, all compositions have a high electrical conductivity, and the materials parameters permit reasonable growth rates. An important supporting investigation is determining the role, if any, that thermoelectromagnetic convection (TEMC) plays during growth of these materials in a magnetic field. TEMC has significant implications for the deployment of a Magnetic Damping Furnace in space. This effect will be especially important in solid solutions where the growth interface is, in general, neither isothermal nor isoconcentrational. It could be important in single melting point materials, also, if faceting takes place producing a non-isothermal interface. In conclusion, magnetic fields up to 5 Tesla are sufficient to eliminate time-dependent convection in silicon floating zones and possibly Bridgman growth of Ge-Si alloys. In both cases, steady convection appears to be more significant for mass transport than diffusion, even at 5 Tesla in the geometries used here. These results are corroborated in both growth configurations by calculations.

  15. Magnetic Semiconductor Quantum Wells in High Fields to 60 Tesla: Photoluminescence Linewidth Annealing at Magnetization Steps

    SciTech Connect

    Awschalom, D.D.; Crooker, S.A.; Lyo, S.K.; Rickel, D.G.; Samarth, N.

    1999-05-24

    Magnetic semiconductors offer a unique possibility for strongly tuning the intrinsic alloy disorder potential with applied magnetic field. We report the direct observation of a series of step-like reductions in the magnetic alloy disorder potential in single ZnSe/Zn(Cd,Mn)Se quantum wells between O and 60 Tesla. This disorder, measured through the linewidth of low temperature photoluminescence spectra drops abruptly at -19, 36, and 53 Tesla, in concert with observed magnetization steps. Conventional models of alloy disorder (developed for nonmagnetic semiconductors) reproduce the general shape of the data, but markedly underestimate the size of the linewidth reduction.

  16. Tailoring Magnetism in Bulk Semiconductors and Quantum Dots

    NASA Astrophysics Data System (ADS)

    Zutic, Igor

    2008-03-01

    Carrier-mediated magnetism in semiconductors shows important and potentially useful differences from their metallic counterparts [1]. For example, in magnetically doped semiconductors the change in carrier density induced by light or bias could be sufficient to turn the ferromagnetism on and off. However, there remain many important challenges to fully understand these materials. Our density functional theory study of Mn- doped II-IV-V2 chalcopyrites [2] reveals that variation of magnetic properties across 64 different materials cannot be explained by the dominant models of ferromagnetism in semiconductors. We observe no qualitative similarity with the suggested Curie temperature scaling with the inverse cube of the lattice constant [3]. In contrast to most of the theoretical studies, we explicitly include the temperature dependence of the carrier density and propose a model which permits analysis of the thermodynamic stability of the competing magnetic states [4]. As an example we analyze the stability of a possible reentrant ferromagnetic semiconductor and discuss the experimental support for this prediction. An increasing temperature leads to an increased carrier density such that the enhanced coupling between magnetic impurities results in the onset of ferromagnetism as temperature is raised. We also use the real space finite-temperature local spin density approximation to examine magnetically doped quantum dots in which the interplay of quantum confinement and strong Coulomb interactions can lead to novel possibilities to tailor magnetism. We reveal that, even at a fixed number of carriers, the gate induced changes in the screening [5] or deviations from isotropic quantum confinement [6] could allow for a reversible control of magnetism and switching between zero and finite magnetization. Such magnetic quantum dots could also provide versatile voltage-control of spin currents and spin filtering. The work done in collaboration with S. C. Erwin (Naval Research

  17. Serial dilution via surface energy trap-assisted magnetic droplet manipulation.

    PubMed

    Zhang, Yi; Shin, Dong Jin; Wang, Tza-Huei

    2013-12-21

    This paper demonstrates a facile method of generating precise serial dilutions in the form of droplets on an open surface platform. The method relies on the use of surface energy traps (SETs), etched areas of high surface energy on a Teflon coated glass substrate, to assist in the magnetic manipulation of droplets to meter and dispense liquid of defined volumes for the preparation of serial dilutions. The volume of the dispensed liquid can be precisely controlled by the size of the SETs, facilitating generation of concentration profiles of high linearity. We have applied this approach to the generation of serial dilutions of antibiotics for anti-microbial susceptibility testing (AST).

  18. Semiconductor Circuit Diagnostics By Magnetic Field Imaging

    NASA Astrophysics Data System (ADS)

    Venkatesan, T.

    2011-03-01

    At the forefront of IC technology development are 3D circuit technologies such as system-in-package (SiP), wafer-level-packaging (WLP), through-silicon-vias (TSV), stacked die approaches, flex packages, etc. They integrate multiple devices, many times stacking them in layers with complex, intricate and very long interconnections in significantly reduced area, in addition to an ever-increasing number of opaque layers.~ We could very well say that the near future looks like the perfect nightmare for the Failure Analysis (FA) engineer with localization of defects becoming a major challenge. Magnetic field imaging (MFI) allows the fields generated by the circuit currents to go through various packaging layers and be imaged. I will describe in this talk Magma, a scanning magnetic field imaging system based on a high temperature superconducting SQUID device based on YBa2Cu3O7- δ . The HTS SQUIDs used have a noise level of ~ 20 pT/ √ (Hz) and for typical scanning conditions, a field sensitivity of about 0.7 nT. While current shorts are imaged with spatial resolution, up to 3 micron (with peak localization) resistive opens can also be imaged and currently different strategies are being adapted for imaging opens with large working distances of 50-100s of microns. Higher spatial resolution (~ 250 nm) is obtained by the use of magneto-resistive devices as sensors though the working distance requirement is sever

  19. Magnetic instability in a dilute circular rarefaction wave

    SciTech Connect

    Dieckmann, M. E.; Sarri, G.; Borghesi, M.

    2012-12-15

    The growth of magnetic fields in the density gradient of a rarefaction wave has been observed in simulations and in laboratory experiments. The thermal anisotropy of the electrons, which gives rise to the magnetic instability, is maintained by the ambipolar electric field. This simple mechanism could be important for the magnetic field amplification in astrophysical jets or in the interstellar medium ahead of supernova remnant shocks. The acceleration of protons and the generation of a magnetic field by the rarefaction wave, which is fed by an expanding circular plasma cloud, is examined here in form of a 2D particle-in-cell simulation. The core of the plasma cloud is modeled by immobile charges, and the mobile protons form a small ring close to the cloud's surface. The number density of mobile protons is thus less than that of the electrons. The protons of the rarefaction wave are accelerated to 1/10 of the electron thermal speed, and the acceleration results in a thermal anisotropy of the electron distribution in the entire plasma cloud. The instability in the rarefaction wave is outrun by a TM wave, which grows in the dense core distribution, and its magnetic field expands into the rarefaction wave. This expansion drives a secondary TE wave.

  20. Simulation of the magnetization dynamics of diluted ferrofluids in medical applications.

    PubMed

    Rogge, Henrik; Erbe, Marlitt; Buzug, Thorsten M; Lüdtke-Buzug, Kerstin

    2013-12-01

    Ferrofluids, which are stable, colloidal suspensions of single-domain magnetic nanoparticles, have a large impact on medical technologies like magnetic particle imaging (MPI), magnetic resonance imaging (MRI) and hyperthermia. Here, computer simulations promise to improve our understanding of the versatile magnetization dynamics of diluted ferrofluids. A detailed algorithmic introduction into the simulation of diluted ferrofluids will be presented. The algorithm is based on Langevin equations and resolves the internal and the external rotation of the magnetic moment of the nanoparticles, i.e., the Néel and Brown diffusion. The derived set of stochastic differential equations are solved by a combination of an Euler and a Heun integrator and tested with respect to Boltzmann statistics. PMID:24163220

  1. Semiconductor Hall magnetometers for magnetic measurement of (In,Cr)As quantum dots

    NASA Astrophysics Data System (ADS)

    Kim, Joon-Il; Guan, T.; von Molnar, S.; Xiong, P.; Wang, S. L.; Wang, H. L.; Zhao, J. H.

    2014-03-01

    Recently, SQUID magnetometry measurements of MBE-grown self-assembled (In,Cr)As QDs showed magnetic hysteresis indicating possible existence of ferromagnetic ordering above 300 K. However, the temperature dependence of the remnant magnetization did not follow the standard Brillouin-like behavior, and the interpretation of the data and elucidation of the origin of the ferromagnetism in the QDs have been hindered by the large ensemble-averaged measurement. Measurements on small clusters or even individual QDs would facilitate a direct correlation of the measured magnetic properties with their structural and chemical characteristics, possibly enabling a definitive understanding of the origin of the ferromagnetism in the diluted magnetic semiconductor QDs. Towards this goal, we have fabricated integrated micro-Hall magnetometers based on high-mobility GaAs/AlGaAs 2DEG in order to facilitate static and dynamic magnetic measurements of the QDs via the Hall gradiometry technique. Integrated structures of (In,Cr)As QDs on top of a GaAs/AlGaAs heterostructure were grown entirely in situ by MBE. Micro-Hall magnetometer devices with six Hall-crosses were fabricated using photolithography and wet chemical etching. Using carefully calibrated selective chemical etching, all QDs were removed except those on three of the Hall-crosses so as to enable gradiometry measurement. Results of on-going measurements will be discussed. Work supported by NSF grants DMR-09008625 and DMR-1308613.

  2. Static Magnetic Fields in Semiconductor Floating-Zone Growth

    NASA Technical Reports Server (NTRS)

    Croll, Arne; Benz, K. W.

    1999-01-01

    Heat and mass transfer in semiconductor float-zone processing are strongly influenced by convective flows in the zone, originating from sources such as buoyancy convection, thermocapillary (Marangoni) convection, differential rotation, or radio frequency heating. Because semiconductor melts are conducting, flows can be damped by the use of static magnetic fields to influence the interface shape and the segregation of dopants and impurities. An important objective is often the suppression of time-dependent flows and the ensuing dopant striations. In RF-heated Si-FZ - crystals, fields up to O.STesla show some flattening of the interface curvature and a reduction of striation amplitudes. In radiation-heated (small-scale) SI-FZ crystals, fields of 0.2 - 0.5 Tesla already suppress the majority of the dopant striations. The uniformity of the radial segregation is often compromised by using a magnetic field, due to the directional nature of the damping. Transverse fields lead to an asymmetric interface shape and thus require crystal rotation (resulting in rotational dopant striations) to achieve a radially symmetric interface, whereas axial fields introduce a coring effect. A complete suppression of dopant striations and a reduction of the coring to insignificant values, combined with a shift of the axial segregation profile towards a more diffusion-limited case, are possible with axial static fields in excess of 1 Tesla. Strong static magnetic fields, however, can also lead to the appearance of thermoelectromagnetic convection, caused by the interaction of thermoelectric currents with the magnetic field.

  3. Analytical study of acoustically perturbed Brillouin active magnetized semiconductor plasma

    SciTech Connect

    Shukla, Arun; Jat, K. L.

    2015-07-31

    An analytical study of acoustically perturbed Brillouin active magnetized semiconductor plasma has been reported. In the present analytical investigation, the lattice displacement, acousto-optical polarization, susceptibility, acousto-optical gain constant arising due to the induced nonlinear current density and acousto-optical process are deduced in an acoustically perturbed Brillouin active magnetized semiconductor plasma using the hydrodynamical model of plasma and coupled mode scheme. The influence of wave number and magnetic field has been explored. The analysis has been applied to centrosymmetric crystal. Numerical estimates are made for n-type InSb crystal duly irradiated by a frequency doubled 10.6 µm CO{sub 2} laser. It is found that lattice displacement, susceptibility and acousto-optical gain increase linearly with incident wave number and applied dc magnetic field, while decrease with scattering angle. The gain also increases with electric amplitude of incident laser beam. Results are found to be well in agreement with available literature.

  4. Spin splitting anisotropy in single diluted magnetic nanowire heterostructures.

    PubMed

    Szymura, Małgorzata; Wojnar, Piotr; Kłopotowski, Łukasz; Suffczyński, Jan; Goryca, Mateusz; Smoleński, Tomasz; Kossacki, Piotr; Zaleszczyk, Wojciech; Wojciechowski, Tomasz; Karczewski, Grzegorz; Wojtowicz, Tomasz; Kossut, Jacek

    2015-03-11

    We study the impact of the nanowire shape anisotropy on the spin splitting of excitonic photoluminescence. The experiments are performed on individual ZnMnTe/ZnMgTe core/shell nanowires as well as on ZnTe/ZnMgTe core/shell nanowires containing optically active magnetic CdMnTe insertions. When the magnetic field is oriented parallel to the nanowire axis, the spin splitting is several times larger than for the perpendicular field. We interpret this pronounced anisotropy as an effect of mixing of valence band states arising from the strain present in the core/shell geometry. This interpretation is further supported by theoretical calculations which allow to reproduce experimental results.

  5. The synthesis and characterization of 1 1 1 1 type diluted ferromagnetic semiconductor (La(1-x)Ca(x))(Zn(1-x) Mn(x))AsO.

    PubMed

    Ding, Cui; Guo, Shengli; Zhao, Yao; Man, Huiyuan; Fu, Licheng; Gu, Yilun; Wang, Zhouyang; Liu, L; Frandsen, B A; Cheung, S; Uemura, Y J; Goko, T; Luetkens, H; Morenzoni, E; Zhao, Yang; Ning, F L

    2016-01-20

    We report the synthesis and characterization of a bulk form diluted magnetic semiconductor, (La(1-x)Ca(x))(Zn(1-y) Mn(y))AsO, with a layered crystal structure isostructural to that of the 1 1 1 1 type Fe-based high-temperature superconductor LaFeAsO and the antiferromagnetic LaMnAsO. With Ca and Mn codoping into LaZnAsO, the ferromagnetic ordering occurs below the Curie temperature T(c) ∼30 K. Taking advantage of the decoupled charge and spin doping, we investigate the influence of carrier concentration on the ferromagnetic ordering state. For a fixed Mn concentration of 10%, T(c) increases from 24 K to 30 K when the Ca concentration increases from 5% to 10%. Further increase of Ca concentration reduces both the coercive field and saturation moment. Muon spin relaxation measurements confirm the ferromagnetically ordered state, and clearly demonstrate that La(1-x)Ca(x))(Zn(1-y) Mn(y))AsO shares a common mechanism for the ferromagnetic exchange interaction with (Ga,Mn)As. Neutron scattering measurements show no structural transition in (La(0.90)Ca(0.10))(Zn(0.90)Mn(0.10)) AsO below 300 K. PMID:26679223

  6. Influence of external magnetic field and magnetic-site dilution on the magnetic dynamics of a one-dimensional Tb(III)-radical complex.

    PubMed

    Li, Leilei; Liu, Shuang; Li, Han; Shi, Wei; Cheng, Peng

    2015-07-11

    A new Tb(III)-radical chain complex was synthesized and characterized, which exhibited two separate relaxation processes. The influence of external magnetic field and magnetic-site dilution on the magnetic dynamics of a one-dimensional Tb(III)-radical complex was studied.

  7. Bipolar magnetic semiconductors: a new class of spintronics materials.

    PubMed

    Li, Xingxing; Wu, Xiaojun; Li, Zhenyu; Yang, Jinlong; Hou, J G

    2012-09-21

    Electrical control of spin polarization is very desirable in spintronics, since electric fields can be easily applied locally, in contrast to magnetic fields. Here, we propose a new concept of bipolar magnetic semiconductors (BMS) in which completely spin-polarized currents with reversible spin polarization can be created and controlled simply by applying a gate voltage. This is a result of the unique electronic structure of BMS, where the valence and conduction bands possess opposite spin polarization when approaching the Fermi level. BMS is thus expected to have potential for various applications. Our band structure and spin-polarized electronic transport calculations on semi-hydrogenated single-walled carbon nanotubes confirm the existence of BMS materials and demonstrate the electrical control of spin-polarization in them.

  8. Dynamics of Coulomb correlations in semiconductors in high magnetic fields

    SciTech Connect

    Fromer, Neil Alan

    2002-05-01

    Current theories have been successful in explaining many nonlinear optical experiments in undoped semiconductors. However, these theories require a ground state which is assumed to be uncorrelated. Strongly correlated systems of current interest, such as a two dimensional electron gas in a high magnetic field, cannot be explained in this manner because the correlations in the ground state and the low energy collective excitations cause a breakdown of the conventional techniques. We perform ultrafast time-resolved four-wave mixing on $n$-modulation doped quantum wells, which contain a quasi-two dimensional electron gas, in a large magnetic field, when only a single Landau level is excited and also when two levels are excited together. We find evidence for memory effects and as strong coupling between the Landau levels induced by the electron gas. We compare our results with simulations based on a new microscopic approach capable of treating the collective effects and correlations of the doped electrons, and find a good qualitative agreement. By looking at the individual contributions to the model, we determine that the unusual correlation effects seen in the experiments are caused by the scattering of photo-excited electron-hole pairs with the electron gas, leading to new excited states which are not present in undoped semiconductors, and also by exciton-exciton interactions mediated by the long-lived collective excitations of the electron gas, inter-Landau level magnetoplasmons.

  9. Magnetic Field Suppression of Flow in Semiconductor Melt

    NASA Technical Reports Server (NTRS)

    Fedoseyev, A. I.; Kansa, E. J.; Marin, C.; Volz, M. P.; Ostrogorsky, A. G.

    2000-01-01

    One of the most promising approaches for the reduction of convection during the crystal growth of conductive melts (semiconductor crystals) is the application of magnetic fields. Current technology allows the experimentation with very intense static fields (up to 80 KGauss) for which nearly convection free results are expected from simple scaling analysis in stabilized systems (vertical Bridgman method with axial magnetic field). However, controversial experimental results were obtained. The computational methods are, therefore, a fundamental tool in the understanding of the phenomena accounting during the solidification of semiconductor materials. Moreover, effects like the bending of the isomagnetic lines, different aspect ratios and misalignments between the direction of the gravity and magnetic field vectors can not be analyzed with analytical methods. The earliest numerical results showed controversial conclusions and are not able to explain the experimental results. Although the generated flows are extremely low, the computational task is a complicated because of the thin boundary layers. That is one of the reasons for the discrepancy in the results that numerical studies reported. Modeling of these magnetically damped crystal growth experiments requires advanced numerical methods. We used, for comparison, three different approaches to obtain the solution of the problem of thermal convection flows: (1) Spectral method in spectral superelement implementation, (2) Finite element method with regularization for boundary layers, (3) Multiquadric method, a novel method with global radial basis functions, that is proven to have exponential convergence. The results obtained by these three methods are presented for a wide region of Rayleigh and Hartman numbers. Comparison and discussion of accuracy, efficiency, reliability and agreement with experimental results will be presented as well.

  10. Magnetic anisotropy control in Ga1-x Mnx As magnetic semiconductors

    NASA Astrophysics Data System (ADS)

    Stagraczyński, S.; Jasiukiewicz, C.; Dugaev, V. K.; Berakdar, J.

    2016-08-01

    Using the six-band Kane model of the electron energy spectrum in the valence band of GaMnAs magnetic semiconductor we investigate the dependence of the crystalline magnetic anisotropy on the magnitude of magnetization and on the doping with holes. Our main focus is on the difference between two possible models related to the constraint on the total hole number or on the chemical potential. Our results show that the theoretical results for magnetic anisotropy can change dramatically with the use of different constraints.

  11. Polydispersity effects on the magnetization of diluted ferrofluids: a lognormal analysis

    NASA Astrophysics Data System (ADS)

    Wang, Xu-Fei; Shi, Li-Qun

    2010-10-01

    Based on a lognormal particle size distribution, this paper makes a model analysis on the polydispersity effects on the magnetization behaviour of diluted ferrofluids. Using a modified Langevin relationship for the lognormal dispersion, it first performs reduced calculations without material parameters. From the results, it is extrapolated that for the ferrofluid of lognormal polydispersion, in comparison with the corresponding monodispersion, the saturation magnetization is enhanced higher by the particle size distribution. It also indicates that in an equivalent magnetic field, the lognormally polydispersed ferrofluid is magnetically saturated faster than the corresponding monodispersion. Along the theoretical extrapolations, the polydispersity effects are evaluated for a typical ferrofluid of magnetite, with a dispersity of σ = 0.20. The results indicate that the lognormal polydispersity leads to a slight increase of the saturation magnetization, but a noticeable increase of the speed to reach the saturation value in an equivalent magnetic field.

  12. Random site dilution properties of frustrated magnets on a hierarchical lattice.

    PubMed

    Fortin, Jean-Yves

    2013-07-24

    We present a method to analyze the magnetic properties of frustrated Ising spin models on specific hierarchical lattices with random dilution. Disorder is induced by dilution and geometrical frustration rather than randomness in the internal couplings of the original Hamiltonian. The two-dimensional model presented here possesses a macroscopic entropy at zero temperature in the large size limit, very close to the Pauling estimate for spin-ice on the pyrochlore lattice, and a crossover towards a paramagnetic phase. The disorder due to dilution is taken into account by considering a replicated version of the recursion equations between partition functions at different lattice sizes. An analysis to first order in replica number allows a systematic reorganization of the disorder configurations, leading to a recurrence scheme. This method is numerically implemented to evaluate thermodynamical quantities such as specific heat and susceptibility in an external field.

  13. Sensing with magnetic dipolar resonances in semiconductor nanospheres.

    PubMed

    García-Cámara, Braulio; Gómez-Medina, Raquel; Sáenz, Juan José; Sepúlveda, Borja

    2013-10-01

    In this work we propose two novel sensing principles of detection that exploit the magnetic dipolar Mie resonance in high-refractive-index dielectric nanospheres. In particular, we theoretically investigate the spectral evolution of the extinction and scattering cross sections of these nanospheres as a function of the refractive index of the external medium (next). Unlike resonances in plasmonic nanospheres, the spectral position of magnetic resonances in high-refractive-index nanospheres barely shifts as next changes. Nevertheless, there is a drastic reduction in the extinction cross section of the nanospheres when next increases, especially in the magnetic dipolar spectral region, which is accompanied with remarkable variations in the radiation patterns. Thanks to these changes, we propose two new sensing parameters, which are based on the detection of: i) the intensity variations in the transmitted or backscattered radiation by the dielectric nanospheres at the magnetic dipole resonant frequency, and ii) the changes in the radiation pattern at the frequency that satisfies Kerker's condition of near-zero forward radiation. To optimize the sensitivity, we consider several semiconductor materials and particles sizes.

  14. Magnetite and magnetite/silver core/shell nanoparticles with diluted magnet-like behavior

    SciTech Connect

    Garza-Navarro, Marco; Gonzalez, Virgilio; Ortiz, Ubaldo; De la Rosa, Elder

    2010-01-15

    In the present work is reported the use of the biopolymer chitosan as template for the preparation of magnetite and magnetite/silver core/shell nanoparticles systems, following a two step procedure of magnetite nanoparticles in situ precipitation and subsequent silver ions reduction. The crystalline and morphological characteristics of both magnetite and magnetite/silver core/shell nanoparticles systems were analyzed by high resolution transmission electron microscopy (HRTEM) and nanobeam diffraction patterns (NBD). The results of these studies corroborate the core/shell morphology and the crystalline structure of the magnetite core and the silver shell. Moreover, magnetization temperature dependent, M(T), measurements show an unusual diluted magnetic behavior attributed to the dilution of the magnetic ordering in the magnetite and magnetite/silver core/shell nanoparticles systems. - Graphical abstract: Biopolymer chitosan was used as stabilization media to synthesize both magnetite and magnetite/silver core/shell nanoparticles. Results of HRTEM and NBD patterns confirm core/shell morphology of the obtained nanoparticles. It was found that the composites show diluted magnet-like behavior.

  15. Recent progress in magnetic iron oxide-semiconductor composite nanomaterials as promising photocatalysts

    NASA Astrophysics Data System (ADS)

    Wu, Wei; Changzhong Jiang, Affc; Roy, Vellaisamy A. L.

    2014-11-01

    Photocatalytic degradation of toxic organic pollutants is a challenging tasks in ecological and environmental protection. Recent research shows that the magnetic iron oxide-semiconductor composite photocatalytic system can effectively break through the bottleneck of single-component semiconductor oxides with low activity under visible light and the challenging recycling of the photocatalyst from the final products. With high reactivity in visible light, magnetic iron oxide-semiconductors can be exploited as an important magnetic recovery photocatalyst (MRP) with a bright future. On this regard, various composite structures, the charge-transfer mechanism and outstanding properties of magnetic iron oxide-semiconductor composite nanomaterials are sketched. The latest synthesis methods and recent progress in the photocatalytic applications of magnetic iron oxide-semiconductor composite nanomaterials are reviewed. The problems and challenges still need to be resolved and development strategies are discussed.

  16. Recent progress in magnetic iron oxide-semiconductor composite nanomaterials as promising photocatalysts.

    PubMed

    Wu, Wei; Changzhong Jiang; Roy, Vellaisamy A L

    2015-01-01

    Photocatalytic degradation of toxic organic pollutants is a challenging tasks in ecological and environmental protection. Recent research shows that the magnetic iron oxide-semiconductor composite photocatalytic system can effectively break through the bottleneck of single-component semiconductor oxides with low activity under visible light and the challenging recycling of the photocatalyst from the final products. With high reactivity in visible light, magnetic iron oxide-semiconductors can be exploited as an important magnetic recovery photocatalyst (MRP) with a bright future. On this regard, various composite structures, the charge-transfer mechanism and outstanding properties of magnetic iron oxide-semiconductor composite nanomaterials are sketched. The latest synthesis methods and recent progress in the photocatalytic applications of magnetic iron oxide-semiconductor composite nanomaterials are reviewed. The problems and challenges still need to be resolved and development strategies are discussed. PMID:25406760

  17. Transverse gradient diffusion in a polydisperse dilute suspension of magnetic spheres during sedimentation.

    PubMed

    Cunha, F R; Couto, H L G

    2008-05-21

    In this work we investigate the pair interaction of magnetic particles in a dilute polydisperse sedimenting suspension. The suspension is composed of magnetic spherical forms of different radii and densities immersed in a Newtonian fluid, settling due to the gravity. When in close contact, the particles may exert on each other a magnetic force due to a permanent magnetization. We restrict our attention to dispersions of micromagnetic composite with negligible Brownian motion. The calculations of the relative particle trajectories are based on direct computations of the hydrodynamic interactions among rigid spheres in the regime of low particle Reynolds number. Depending on the relative importance of the interparticle forces and gravity, the collisions may result in aggregation or simply in a breaking of the particle relative trajectory time reversibility. After summing over all possible encounters, the transverse self-diffusion and down-gradient diffusion coefficients that describe the cross-flow migration of the particles are calculated. Our calculation shows first evidence and the significance of the diffusion process arising from magnetic interactions in dilute non-Brownian suspensions. PMID:21694258

  18. Engineering Gilbert damping by dilute Gd doping in soft magnetic Fe thin films

    SciTech Connect

    Zhang, W. Jiang, S.; Sun, L.; Wang, Y. K.; Zhai, Y.; Wong, P. K. J.; Wang, K.; Jong, M. P. de; Wiel, W. G. van der; Laan, G. van der

    2014-05-07

    By analyzing the ferromagnetic resonance linewidth, we show that the Gilbert damping constant in soft magnetic Fe thin films can be enhanced by ∼6 times with Gd doping of up to 20%. At the same time, the magnetic easy axis remains in the film plane while the coercivity is strongly reduced after Gd inclusion. X-ray magnetic circular dichroism measurements reveal a strong increase in the orbital-to-spin moment ratio of Fe with increasing Gd concentration, in full agreement with the increase in the Gilbert damping obtained for these thin films. Combined with x-ray diffraction and vibrating sample magnetometry, the results demonstrate that the FeGd thin films with dilute Gd doping of up to 20% are promising candidates for spin-transfer-torque applications in soft magnetic devices, in which an enhanced damping is required.

  19. Tunable exchange bias in dilute magnetic alloys – chiral spin glasses

    PubMed Central

    Hudl, Matthias; Mathieu, Roland; Nordblad, Per

    2016-01-01

    A unidirectional anisotropy appears in field cooled samples of dilute magnetic alloys at temperatures well below the cusp temperature of the zero field cooled magnetization curve. Magnetization measurements on a Cu(13.5 at% Mn) sample show that this anisotropy is essentially temperature independent and acts on a temperature dependent excess magnetization, ΔM. The anisotropy can be partially or fully transferred from being locked to the direction of the cooling field at lower fields to becoming locked to the direction of ΔM at larger fields, thus instead appearing as a uniaxial anisotropy. This introduces a deceiving division of the anisotropy into a superposition of a unidirectional and a uniaxial part. This two faced nature of the anisotropy has been empirically scrutinized and concluded to originate from one and the same exchange mechanism: the Dzyaloshinsky-Moriya interaction. PMID:26817418

  20. Arbitrary magnetic field modulations to a semiconductor pump with two types of spin-orbit couplings

    NASA Astrophysics Data System (ADS)

    Yunchang, Xiao; Changyong, Zhu; Rixing, Wang

    2016-01-01

    Arbitrary magnetic field modulations to the semiconductor pump with both the Rashba and Dresselhaus spin-orbit couplings (SOC) are studied. The pump is driven by double time-dependent delta potentials, which are formed in the interfaces between the semiconductor region and two normal leads. Based on the Floquet scattering approach, our calculations show that various currents can be pumped by couplings of the magnetic fields and the SOCs. Pure spin currents modulated by the arbitrary magnetic fields are discussed in detail.

  1. Magnetoviscosity of dilute suspensions of magnetic ellipsoids obtained through rotational Brownian dynamics simulations.

    PubMed

    Sánchez, J H; Rinaldi, C

    2009-03-15

    The magnetic field dependent viscosity (magnetoviscosity) of dilute suspensions of magnetic tri-axial ellipsoidal particles suspended in a Newtonian fluid and under applied shear and magnetic fields was studied numerically. Brownian dynamics simulations were performed to compute the intrinsic magnetoviscosity of the suspension. Results are presented for the response of dilute suspensions of ellipsoidal particles to constant magnetic and shear flow fields. Suspensions of ellipsoidal particles show a significant effect of aspect ratio on the intrinsic magnetoviscosity of the suspension, and this effect is more pronounced as the aspect ratio becomes more extreme. The use of an effective rotational diffusion coefficient D(r,eff) collapses the normalized intrinsic magnetoviscosity of all suspensions to a master curve as a function of Péclet number with the Langevin parameter alpha=(mu(0)muH)/(k(B)T) as parameter, up to a critical value of alpha for which the results for suspensions of spherical particles deviate from those of suspensions of ellipsoids. This discrepancy is attributed to the action of the shear-torque on the ellipsoidal particles, which tends to orient these particles in the direction of maximum deformation of the simple shear flow, and which does not act on spherical particles. PMID:19100560

  2. Defect-induced magnetism: Test of dilute magnetism in Fe-doped hexagonal BaTiO3 single crystals

    NASA Astrophysics Data System (ADS)

    Chakraborty, Tanushree; Ray, Sugata; Itoh, Mitsuru

    2011-04-01

    Single crystalline Fe-doped hexagonal BaTiO3 samples with varying oxygen content are created by specifically intended post-growth annealing treatments, in order to check the influence of defects on the unusual high temperature ferromagnetism observed in this system. The various defects have been shown to play a crucial role in dilute magnetic systems and therefore, it is important to carry out this check for the Fe-doped BaTiO3 system also, in which unusual ferromagnetism was reported even in its bulk single crystalline form. The x-ray diffraction and dielectric studies carried out here have confirmed that the Fe doping of Ti is intrinsic, while the high resolution transmission electron microscopy (HRTEM) and x-ray photoemission spectroscopy (XPS) studies proved the absence of unwanted magnetic metal clusters in the sample. The transport studies show that the oxygen concentrations could be varied substantially by the thermal treatments. Finally, magnetization measurements on the samples demonstrated that ferromagnetism is stronger in samples with higher oxygen deficiency, which could interestingly be retreated under high oxygen atmosphere and reversibly be taken back to a lower magnetic state. The vacancy-induced ferromagnetism is further confirmed by EPR measurements, which is consistent with earlier studies and, consequently, put the doped BaTiO3 in the list of true dilute magnetic oxide (DMO) systems.

  3. Operation of superconducting magnet with dilution refrigerator insert in zero boil-off regime

    NASA Astrophysics Data System (ADS)

    Kirichek, O.; Down, R. B. E.; Kouzmenko, G.; Keeping, J.; Bunce, D.; Wotherspoon, R.; Bowden, Z. A.

    2010-10-01

    The combination of high magnetic field and ultra-low temperatures has proved to be indispensable for a broad range of condensed matter physics experiments. However problems with the global helium supply have raised significant concern about affordability of conventional cryogenic equipment. The latest developments in cryo-cooler technology offer a new generation of cryogenic systems in which the cryogen consumption can be significantly reduced and in some cases completely eliminated. We have demonstrated a new high magnetic field - ultra-low temperature neutron scattering sample environment system based on re-condensing technology. In our tests we have shown that the 9 T superconducting magnet, built for the ISIS facility, can be run with a dilution refrigerator insert in continuous zero boil-off regime without any additional cooling.

  4. On the self-organization of magnetic field and highly diluted matter in astrophysics

    NASA Astrophysics Data System (ADS)

    Berdichevsky, D. B.

    2015-12-01

    It is explored the self organization of matter and field in regions beyond our common reach on the surface of our planet and its atmospheric surroundings. This state of matter, which most basic property, the freezing in the magnetic field, see e.g., Chew et al, 1956, has proved to exist in the regions where robotic observations in the near and far space perform detailed observations of magnetic fields, and extreme dilute plasma (commonly about 1000 to 0.1 or less ionized particles per cubic cm). We present and discuss here simple hypotheses on the nature of what could be this state of magnetized matter which in the electron distribution shows a shape which often can successfully be described with a kappa distribution when inside a strongly magnetized transient, of the magnetic cloud kind, see e.g., Nieves Chinchilla and Figueroa-Viñas, 2008. This work is in many ways an extension of Alfven work on magnetized space plasmas, Alven, 1942. Chew, G.F., M.L., Goldberger, and F.E. Low, 1956, the Royal Soc. London, section Math & Phys Sc., 236, pp. 112. Nieves-Chinchilla, T., and A., Figueroa-Viñas, 2008, J. Geophys. Res., 113, A02105. Alfvén, H (1942). "Existence of electromagnetic-hydrodynamic waves". Nature 150: 405.. doi:10.1038/150405d0

  5. Electronic structure and magnetic properties of dilute U impurities in metals

    NASA Astrophysics Data System (ADS)

    Mohanta, S. K.; Cottenier, S.; Mishra, S. N.

    2016-05-01

    The electronic structure and magnetic moment of dilute U impurity in metallic hosts have been calculated from first principles. The calculations have been performed within local density approximation of the density functional theory using Augmented plane wave+local orbital (APW+lo) technique, taking account of spin-orbit coupling and Coulomb correlation through LDA+U approach. We present here our results for the local density of states, magnetic moment and hyperfine field calculated for an isolated U impurity embedded in hosts with sp-, d- and f-type conduction electrons. The results of our systematic study provide a comprehensive insight on the pressure dependence of 5f local magnetism in metallic systems. The unpolarized local density of states (LDOS), analyzed within the frame work of Stoner model suggest the occurrence of local moment for U in sp-elements, noble metals and f-block hosts like La, Ce, Lu and Th. In contrast, U is predicted to be nonmagnetic in most transition metal hosts except in Sc, Ti, Y, Zr, and Hf consistent with the results obtained from spin polarized calculation. The spin and orbital magnetic moments of U computed within the frame of LDA+U formalism show a scaling behavior with lattice compression. We have also computed the spin and orbital hyperfine fields and a detail analysis has been carried out. The host dependent trends for the magnetic moment, hyperfine field and 5f occupation reflect pressure induced change of electronic structure with U valency changing from 3+ to 4+ under lattice compression. In addition, we have made a detailed analysis of the impurity induced host spin polarization suggesting qualitatively different roles of f-band electrons on moment stability. The results presented in this work would be helpful towards understanding magnetism and spin fluctuation in U based alloys.

  6. Magnetism and Mn Clustering in (In,Mn)Sb Magnetic Semiconductors.

    PubMed

    Liu, Jindong; Hanson, Micah P; Peters, John A; Wessels, Bruce W

    2015-11-01

    Previously, high-temperature ferromagnetism with a Curie temperature in excess of 400 K was reported in the magnetic semiconductor (In,Mn)Sb films grown by metal-organic vapor phase epitaxy (MOVPE). To determine the role of Mn distribution on its magnetic properties, the Mn 2p core-level X-ray photoelectron spectroscopy (XPS) of (In,Mn)Sb films was measured. For films grown on an InSb substrate, Mn composition is spatially inhomogeneous and its concentration increases with increasing deposition temperature. Spin-orbit splitting energy of the Mn 2p core-level was found to increase with increasing Mn concentration. From the dependence of the measured spin-orbit splitting energy on the Mn concentration, evidence of atomic-scale Mn cluster formation was observed. The measured magnetic moment per Mn atom decreases from 3.0 μB/Mn to 1.8 μB/Mn with increasing Mn concentration, which is attributed to atomic-scale clusters that are ferromagnetic or ferrimagnetic. This detailed investigation gives an insight into the Mn distribution, phase composition and origin of magnetism in MOVPE-grown (In,Mn)Sb magnetic thin films.

  7. Electromagnetic waves reflection, transmission and absorption by graphene-magnetic semiconductor-graphene sandwich-structure in magnetic field: Faraday geometry

    NASA Astrophysics Data System (ADS)

    Kuzmin, Dmitry A.; Bychkov, Igor V.; Shavrov, Vladimir G.

    2014-11-01

    Electrodynamic properties of the graphene-magnetic semiconductor-graphene sandwich-structure have been investigated theoretically with taking into account the dissipation processes. Influence of graphene layers on electromagnetic waves propagation in graphene-semi-infinte magnetic semiconductor and graphene-magnetic semiconductor-graphene sandwich-structure has been analyzed. Frequency and field dependences of the reflectance, transmittance and absorbtance of electromagnetic waves by such structure have been calculated. The size effects associated with the thickness of the structure have been analyzed. The possibility of efficient control of electrodynamic properties of graphene-magnetic semiconductor-graphene sandwich-structure by an external magnetic field has been shown.

  8. Contribution of spin pairs to the magnetic response in a dilute dipolar ferromagnet

    NASA Astrophysics Data System (ADS)

    Gannarelli, C. M. S.; Silevitch, D. M.; Rosenbaum, T. F.; Aeppli, G.; Fisher, A. J.

    2012-07-01

    We simulate the dc magnetic response of the diluted dipolar-coupled Ising magnet LiHo0.045Y0.955F4 in a transverse field, using exact diagonalization of a two-spin Hamiltonian averaged over nearest-neighbor configurations. The pairwise model, incorporating hyperfine interactions, accounts for the observed drop-off in the longitudinal (c -axis) susceptibility with increasing transverse field; with the inclusion of a small tilt in the transverse field, it also accounts for the behavior of the off-diagonal magnetic susceptibility. The hyperfine interactions do not appear to lead to qualitative changes in the pair susceptibilities, although they do renormalize the crossover fields between different regimes. The comparison with experiment indicates that antiferromagnetic correlations are more important than anticipated based on simple pair statistics and our first-principles calculations of the pair response. This means that larger clusters will be needed for a full description of the reduction in the diagonal response at small transverse fields.

  9. Magnetic dilution in the cadmium-doped spin ladder compound Cdx Cu1 - x (quinoxaline) Br2

    NASA Astrophysics Data System (ADS)

    Keith, Brian; Landee, Chris; Turnbull, Mark

    2011-03-01

    Both Cu (quinoxaline) (Br2) and Cu (quinoxaline) (Cl2) are examples of molecule-based magnets where the CuX4 dimers are linked into ladders by quinoxaline molecules, where X is either Cl or Br. The rung exchange occurs through the bridging halides while the rail exchange occurs through the quinoxaline rings. Introducing random rung interactions into the system [ Cu (quinoxaline) (Br2)1-x (Cl2)x ] has caused the spin gap to close, in contrast with the gapped pure spin ladder parents. Crystal growth of non-magnetic-doped molecular magnets, CdxCu1 - x (2 , 3 - dimethylpyrazine)Br2 , have been performed for several values of the nominal conentration, x, and have been confirmed. The magnetizations and susceptibilities of the magnetically diluted ladder assemblage are presented along with a comparison of the effects of dilution from the pure case (x=0).

  10. Bistable Magnetism and Potential for Voltage-Induced Spin Crossover in Dilute Magnetic Ferroelectrics

    NASA Astrophysics Data System (ADS)

    Weston, L.; Cui, X. Y.; Ringer, S. P.; Stampfl, C.

    2015-06-01

    A first-principles investigation into the magnetic ferroelectric PbTi1 -xCoxO3 has revealed a bi-stable magnetic system with strong spin-lattice coupling. The local distortions induced by the low-spin to high-spin crossover are ferroelectric in nature, and are characterized by the displacement of the dopant ion with respect to the surrounding O6 octahedral cage. We demonstrate how this spin-lattice effect could mediate magnetoelectric coupling and possible electric field induced spin-crossover, indicating a promising route to voltage manipulation of isolated spins in a solid-state system.

  11. Semiconductor-halfmetal-metal transition and magnetism of bilayer graphene nanoribbons/hexagonal boron nitride heterostructure

    NASA Astrophysics Data System (ADS)

    Ilyasov, V. V.; Meshi, B. C.; Nguyen, V. C.; Ershov, I. V.; Nguyen, D. C.

    2014-12-01

    The paper presents the results of ab initio study of electronic structure modulation and edge magnetism in the antiferromagnetic (AF) bilayer zigzag graphene nanoribbons (AF-BZGNR)/hexagonal boron nitride (h-BN(0001)) semiconductor heterostructure induced with transverse external electric field (Eext) and nanomechanical compression (extension), performed within the framework of the density functional theory using Grimme's DFT(PBE)-D2 scheme. For the first time we established critical values of Eext and interlayer distance in the bilayer for the BZGNR/h-BN(0001) heterostructure providing for semiconductor-halfmetal-metal phase transition for one of the electron spin configurations. We discovered the effect of preserved local magnetic moment (0.3μB) of edge carbon atoms of the lower (buffer) graphene nanoribbon during nanomechanical uniaxial compression (or extension) of the BZGNR/h-BN(0001) semiconductor heterostructure. It has been demonstrated that magnetic properties of the AF-BZGNR/h-BN(0001) semiconductor heterostructure can be controlled using Eext. In particular, the local magnetic moment of edge carbon atoms decreases by 10% at a critical value of the positive potential. We have established that local magnetic moments and band gaps can be altered in a wide range using nanomechanical uniaxial compression and Eext, thus making the AF-BZGNR/h-BN(0001) semiconductor heterostructure potentially promising for nanosensors, spin filters, and spintronics applications.

  12. Proceedings of the 6th International Conference on Narrow Gap Semiconductors

    NASA Astrophysics Data System (ADS)

    Stradling, R. A.; Mullin, J. B.

    1992-07-01

    This proceedings includes papers in the following areas: novel growth and structures; dilute magnetic semiconductors; II-VI electronics, optics, and growth; III-V devices; magnetism and magneto-optics; dots and novel confinement; linear and nonlinear optics; and material properties of IV-VI semiconductors.

  13. Magnetic dilution and domain selection in the X Y pyrochlore antiferromagnet Er2Ti2O7

    NASA Astrophysics Data System (ADS)

    Gaudet, J.; Hallas, A. M.; Maharaj, D. D.; Buhariwalla, C. R. C.; Kermarrec, E.; Butch, N. P.; Munsie, T. J. S.; Dabkowska, H. A.; Luke, G. M.; Gaulin, B. D.

    2016-08-01

    Below TN=1.1 K, the X Y pyrochlore Er2Ti2O7 orders into a k =0 noncollinear, antiferromagnetic structure referred to as the ψ2 state. The magnetic order in Er2Ti2O7 is known to obey conventional three-dimensional (3D) percolation in the presence of magnetic dilution, and in that sense is robust to disorder. Recently, however, two theoretical studies have predicted that the ψ2 structure should be unstable to the formation of a related ψ3 magnetic structure in the presence of magnetic vacancies. To investigate these theories, we have carried out systematic elastic and inelastic neutron scattering studies of three single crystals of Er2 -xYxTi2O7 with x =0 (pure), 0.2 (10 %Y ) and 0.4 (20 % Y ), where magnetic Er3 + is substituted by nonmagnetic Y3 +. We find that the ψ2 ground state of pure Er2Ti2O7 is significantly affected by magnetic dilution. The characteristic domain selection associated with the ψ2 state, and the corresponding energy gap separating ψ2 from ψ3, vanish for Y3 + substitutions between 10 % Y and 20 % Y , far removed from the three-dimensional percolation threshold of ˜60 % Y . The resulting ground state for Er2Ti2O7 with magnetic dilutions from 20 % Y up to the percolation threshold is naturally interpreted as a frozen mosaic of ψ2 and ψ3 domains.

  14. Specific detection of unamplified mycobacterial DNA by use of fluorescent semiconductor quantum dots and magnetic beads.

    PubMed

    Gazouli, M; Liandris, E; Andreadou, M; Sechi, L A; Masala, S; Paccagnini, D; Ikonomopoulos, J

    2010-08-01

    Here we present the development of a specific DNA detection method using fluorescent semiconductor quantum dots (QDs) and magnetic beads (MBs) for fast detection of Mycobacterium spp., dispensing with the need for DNA amplification. Two biotinylated oligonucleotide probes were used to recognize and detect specific complementary mycobacterial target DNA through a sandwich hybridization reaction. Cadmium selenite QDs conjugated with streptavidin and species-specific probes were used to produce a fluorescent signal. MBs conjugated with streptavidin and a genus-specific probe were used to isolate and concentrate the DNA targets. The application of the proposed method to isolated bacteria produced the expected result in all cases. The minimum detection limit of the assay was defined as 12.5 ng of DNA diluted in a sample volume of 20 microl. In order to obtain an indication of the method's performance with clinical samples, we applied the optimized assay to the detection of Mycobacterium tuberculosis in DNA isolated from bronchoalveolar lavage specimens from patients with tuberculosis and Mycobacterium avium subsp. paratuberculosis in DNA isolated from feces and paraffin-embedded tissues in comparison with culture, Ziehl-Neelsen staining, and real-time PCR. The concordance of these methods compared to the proposed method with regard to positive and negative samples varied between 53.84% and 87.23% and between 84.61% and 100%, respectively. The overall accuracy of the QD assay compared to real-time PCR was 70 to 90% depending on the type of clinical material. The proposed diagnostic assay offers a simple, rapid, specific, and cost-effective method for direct detection and identification of mycobacterial DNA in clinical samples. PMID:20554817

  15. Influence of a magnetic field on the viscosity of a dilute gas consisting of linear molecules.

    PubMed

    Hellmann, Robert; Vesovic, Velisa

    2015-12-01

    The viscomagnetic effect for two linear molecules, N2 and CO2, has been calculated in the dilute-gas limit directly from the most accurate ab initio intermolecular potential energy surfaces presently available. The calculations were performed by means of the classical trajectory method in the temperature range from 70 K to 3000 K for N2 and 100 K to 2000 K for CO2, and agreement with the available experimental data is exceptionally good. Above room temperature, where no experimental data are available, the calculations provide the first quantitative information on the magnitude and the behavior of the viscomagnetic effect for these gases. In the presence of a magnetic field, the viscosities of nitrogen and carbon dioxide decrease by at most 0.3% and 0.7%, respectively. The results demonstrate that the viscomagnetic effect is dominated by the contribution of the jj¯ polarization at all temperatures, which shows that the alignment of the rotational axes of the molecules in the presence of a magnetic field is primarily responsible for the viscomagnetic effect.

  16. Room temperature magnetism and metal to semiconducting transition in dilute Fe doped Sb1-xSex semiconducting alloy thin films

    NASA Astrophysics Data System (ADS)

    Agrawal, Naveen; Sarkar, Mitesh; Chawda, Mukesh; Ganesan, V.; Bodas, Dhananjay

    2015-02-01

    The magnetism was observed in very dilute Fe doped alloy thin film Fe0.008Sb1-xSex, for x = 0.01 to 0.10. These thin films were grown on silicon substrate using thermal evaporation technique. Structural, electrical, optical, charge carrier concentration measurement, surface morphology and magnetic properties were observed using glancing incidence x-ray diffraction (GIXRD), four probe resistivity, photoluminescence, Hall measurement, atomic force microscopy (AFM) and magnetic force microscopy (MFM) techniques, respectively. No peaks of iron were seen in GIXRD. The resistivity results show that activation energy increases with increase in selenium (Se) concentration. The Arrhenius plot reveals metallic behavior below room temperature. The low temperature conduction is explained by variable range-hopping mechanism, which fits very well in the temperature range 150-300 K. The decrease in density of states has been observed with increasing selenium concentration (x = 0.01 to 0.10). There is a metal-to-semiconductor phase transition observed above room temperature. This transition temperature is Se concentration dependent. The particle size distribution ˜47-61 nm is evaluated using AFM images. These thin films exhibit ferromagnetic interactions at room temperature.

  17. Disorder-induced localization and itinerant magnetism in the Half-Heusler alloys and dilution studies of the beta-titanium tin and barium boride compounds

    NASA Astrophysics Data System (ADS)

    Drymiotis, Fivos

    We present experimental results of magnetization, resistance and specific heat, on single crystals of several Half Heusler alloys. In particular we focus on the 18 valence electrons TiCoSb and TiNiSn and their evolution from their non magnetic ground state to the metallic TiFeSb, VCoSb and TiCoSn. Contrary to previous experimental results we find the ground state of TiCoSb to be metallic but driven to semiconducting through disorder induced localization. In all samples studied we find that the semiconductor to metal transition occurs concurrently with a lattice parameter change. Ferromagnetic ordering appears to occur only if the Stoner criterion is satisfied and long range ordering occurs even in the presence of localizes states. The transport behavior of all samples depends on the dimensional ratio WB corresponding to the ratio of the extent of localization to the bandwidth. Experimental results are also presented on the beta-Ti 6Sn5 compound which according to magnetization and specific heat measurements is very close to ferromagnetic instability. Ferromagnetic ordering occurs after minute amounts of doping with certain elements (La, Ce, Pr, Sm, Co) on the Ti site. Large values of the critical temperatures are observed which do not scale with the dopant dilution concentration. Experimental evidence is also presented on the existence of a ferromagnetic ground state for BaB6 and La doped BaB6.

  18. Magneto-optical studies of magnetic and non-magnetic narrow-gap semiconductors

    NASA Astrophysics Data System (ADS)

    Khodaparast, Giti

    2005-03-01

    In light of the growing interest in spin-related phenomena and devices, there is now renewed interest in the science and engineering of narrow gap semiconductors. Narrow gap semiconductors (NGS) offer many unique features such as small effective masses, high intrinsic mobilities, large effective g- factors, and large spin-orbit coupling effects. This talk will discuss our recent magneto-optical studies on InSb quantum wells (QWs) and InMnAs ferromagnetic heterostructures. In InSb QWs, we observe spin-resolved cyclotron resonance (CR) caused by the non- parabolicity in conduction band and electron spin resonance in symmetric and asymmetric confinement potentials. The asymmetric wells exhibit a strong deviation in behavior from the symmetric wells at low magnetic fields with far more spin splitting than expected from the bulk g-factor of InSb. In InMnAs/GaSb we observe light and heavy hole CR peaks which demonstrate the existence of delocalized p-like carriers. In addition, In order to increase our understanding of the dynamics of carriers and spins, we performed time resolved measurements such as time- resolved CR spectroscopy on undoped InSb QWs and time-resolved magneto-optical Kerr effect on InMnAs/GaSb. Our results are important for understanding the electronic and magnetic states in NGS. This work was performed in collaboration with M. B. Santos and R. E. Doezema at the Univ. of Oklahoma, J. Wang and J. Kono at Rice Univ., H. Munekata at Tokyo Institute of Technology, C. J. Stanton at the Univ. of Florida, and Y. H. Matsuda and N. Miura at the Univ. of Tokyo.

  19. Magnetic anisotropy induced by crystal distortion in Ge{sub 1−x}Mn{sub x}Te/PbTe//KCl (001) ferromagnetic semiconductor layers

    SciTech Connect

    Knoff, W. Łusakowski, A.; Domagała, J. Z.; Minikayev, R.; Taliashvili, B.; Łusakowska, E.; Pieniążek, A.; Szczerbakow, A.; Story, T.

    2015-09-21

    Ferromagnetic resonance (FMR) study of magnetic anisotropy is presented for thin layers of IV-VI diluted magnetic semiconductor Ge{sub 1−x}Mn{sub x}Te with x = 0.14 grown by molecular beam epitaxy on KCl (001) substrate with a thin PbTe buffer. Analysis of the angular dependence of the FMR resonant field reveals that an easy magnetization axis is located near to the normal to the layer plane and is controlled by two crystal distortions present in these rhombohedral Ge{sub 1−x}Mn{sub x}Te layers: the ferroelectric distortion with the relative shift of cation and anion sub-lattices along the [111] crystal direction and the biaxial in-plane, compressive strain due to thermal mismatch.

  20. Physical Properties of Ni2GeO4 Spinel Perturbed by Magnetic Dilution and Applied Pressure

    NASA Astrophysics Data System (ADS)

    Korobanik, Jory; Razavi, Fereidoon

    2014-03-01

    Geometrically frustrated magnetic systems have yielded an interesting and rich playground for physicists. Recently, a new disordered low temperature state was discovered in the frustrated pyrochlore type Ho2Ti2O7 which is termed spin ice. This phase is the magnetic analog to water ice with local spin disorder replacing proton disorder. Geometric frustration arises when nearest neighbor exchange interactions cannot be simultaneously satisfied resulting in large macroscopic degeneracy. This has the effect of suppressing Neel ordering temperature. This work seeks to understand the effects of applied pressure and magnetic dilution to the frustrated spinel Ni2GeO4. The parent material undergoes two closely spaced ordering events at T1 = 12.1K and T2 = 11.4K. Upon dilution a downward shift in the ordering temperatures is observed with a destruction of the lower T2 transition. Heat capacity, AC and DC magnetometry are used to probe the changes in physical properties.

  1. Spin-polarized transport in inhomogeneous magnetic semiconductors: theory of magnetic/nonmagnetic p-n junctions.

    PubMed

    Zutić, Igor; Fabian, Jaroslav; Das Sarma, S

    2002-02-11

    A theory of spin-polarized transport in inhomogeneous magnetic semiconductors is developed and applied to magnetic/nonmagnetic p-n junctions. Several phenomena with possible spintronic applications are predicted, including spin-voltaic effect, spin valve effect, exponential and giant magnetoresistance. It is demonstrated that only nonequilibrium spin can be injected across the space-charge region of a p-n junction, so that there is no spin injection (or extraction) at low bias. PMID:11863835

  2. Magnetic coupling in ferromagnetic semiconductor (Ga,Mn)As/(Al,Ga,Mn)As bilayers

    NASA Astrophysics Data System (ADS)

    Wang, M.; Wadley, P.; Campion, R. P.; Rushforth, A. W.; Edmonds, K. W.; Gallagher, B. L.; Charlton, T. R.; Kinane, C. J.; Langridge, S.

    2015-08-01

    We report on a study of ferromagnetic semiconductor (Ga,Mn)As/(Al,Ga,Mn)As bilayers using magnetometry and polarized neutron reflectivity (PNR). From depth-resolved characterization of the magnetic structure obtained by PNR, we concluded that the (Ga,Mn)As and (Al,Ga,Mn)As layers have in-plane and perpendicular-to-plane magnetic easy axes, respectively, with weak interlayer coupling. Therefore, the layer magnetizations align perpendicular to each other under low magnetic fields and parallel at high fields.

  3. Magnetic coupling in ferromagnetic semiconductor (Ga,Mn)As/(Al,Ga,Mn)As bilayers

    SciTech Connect

    Wang, M.; Wadley, P.; Campion, R. P.; Rushforth, A. W.; Edmonds, K. W.; Gallagher, B. L.; Charlton, T. R.; Kinane, C. J.; Langridge, S.

    2015-08-07

    We report on a study of ferromagnetic semiconductor (Ga,Mn)As/(Al,Ga,Mn)As bilayers using magnetometry and polarized neutron reflectivity (PNR). From depth-resolved characterization of the magnetic structure obtained by PNR, we concluded that the (Ga,Mn)As and (Al,Ga,Mn)As layers have in-plane and perpendicular-to-plane magnetic easy axes, respectively, with weak interlayer coupling. Therefore, the layer magnetizations align perpendicular to each other under low magnetic fields and parallel at high fields.

  4. Origin and enhancement of spin polarized current in diluted magnetic oxides by oxygen vacancies

    NASA Astrophysics Data System (ADS)

    Chou, Hsiung; Yang, Kung-Shang; Tsao, Yao-Chung; Dwivedi, G. D.; Lin, Cheng-Pang; Sun, Shih-Jye; Lin, L. K.; Lee, S. F.

    2016-04-01

    Spin polarized current (SPC) is a crucial characteristic of diluted magnetic oxides due to the potential application of oxides in spintronic devices. However, most research has been focused on ferromagnetic properties rather than polarization of electric current, because direct measurements are difficult and the origin of SPC has yet to be fully understood. The method to increase the SPC percentage is beyond practical consideration at present. To address this problem, we focus on the role of oxygen vacancies (VO) on SPC, which are controlled by growing the Co-doped ZnO thin-films at room temperature in a reducing atmosphere [Ar + (1%-30%)H2]. We found that the conductivity increases with an increase of VO via two independent channels: the variable range hopping (VRH) within localized states and the itinerant transport in the conduction band. The point contact Andreev reflection measurements at 4.2 K, where the electric conduction is governed only by the VRH mechanism, prove that the current flowing in the VRH hopping channel is SPC. The percentage of SPC increases with the introduction of VO and increase in its concentration. The transport measurement shows that by manipulating VO, one can control the percentage of VRH hopping conduction such that it can even dominate room temperature conduction. The highest achieved SPC ratio at room temperature was 80%.

  5. Parametric distortion of the optical absorption edge of a magnetic semiconductor by a strong laser field

    SciTech Connect

    Nunes, O.A.C.

    1985-09-15

    The influence of a strong laser field on the optical absorption edge of a direct-gap magnetic semiconductor is considered. It is shown that as the strong laser intensity increases the absorption coefficient is modified so as to give rise to an absorption tail below the free-field forbidden gap. An application is made for the case of the EuO.

  6. Theoretical and experimental investigations of superconductivity. Amorphous semiconductors, superconductivity and magnetism

    NASA Technical Reports Server (NTRS)

    Cohen, M. H.

    1973-01-01

    The research activities from 1 March 1963 to 28 February 1973 are summarized. Major lectures are listed along with publications on superconductivity, superfluidity, electronic structures and Fermi surfaces of metals, optical spectra of solids, electronic structure of insulators and semiconductors, theory of magnetic metals, physics of surfaces, structures of metals, and molecular physics.

  7. Magnetic Field Applications in Semiconductor Crystal Growth and Metallurgy

    NASA Technical Reports Server (NTRS)

    Mazuruk, Konstantin; Ramachandran, Narayanan; Grugel, Richard; Curreri, Peter A. (Technical Monitor)

    2002-01-01

    The Traveling Magnetic Field (TMF) technique, recently proposed to control meridional flow in electrically conducting melts, is reviewed. In particular, the natural convection damping capability of this technique has been numerically demonstrated with the implication of significantly improving crystal quality. Advantages of the traveling magnetic field, in comparison to the more mature rotating magnetic field method, are discussed. Finally, results of experiments with mixing metallic alloys in long ampoules using TMF is presented

  8. Nuclear magnetic relaxation studies of semiconductor nanocrystals and solids

    SciTech Connect

    Sachleben, J. R.

    1993-09-01

    Semiconductor nanocrystals, small biomolecules, and {sup 13}C enriched solids were studied through the relaxation in NMR spectra. Surface structure of semiconductor nanocrystals (CdS) was deduced from high resolution {sup 1}H and {sup 13}C liquid state spectra of thiophenol ligands on the nanocrystal surfaces. The surface coverage by thiophenol was found to be low, being 5.6 and 26% for nanocrystal radii of 11.8 and 19.2 {angstrom}. Internal motion is estimated to be slow with a correlation time > 10{sup {minus}8} s{sup {minus}1}. The surface thiophenol ligands react to form a dithiophenol when the nanocrystals were subjected to O{sub 2} and ultraviolet. A method for measuring {sup 14}N-{sup 1}H J-couplings is demonstrated on pyridine and the peptide oxytocin; selective 2D T{sub 1} and T{sub 2} experiments are presented for measuring relaxation times in crowded spectra with overlapping peaks in 1D, but relaxation effects interfere. Possibility of carbon-carbon cross relaxation in {sup 13}C enriched solids is demonstrated by experiments on zinc acetate and L-alanine.

  9. Nuclear magnetic relaxation studies of semiconductor nanocrystals and solids

    NASA Astrophysics Data System (ADS)

    Sachleben, J. R.

    1993-09-01

    Semiconductor nanocrystals, small biomolecules, and C-13 enriched solids were studied through the relaxation in NMR spectra. Surface structure of semiconductor nanocrystals (CdS) was deduced from high resolution H-1 and C-13 liquid state spectra of thiophenol ligands on the nanocrystal surfaces. The surface coverage by thiophenol was found to be low, being 5.6 and 26% for nanocrystal radii of 11.8 and 19.2 angstrom. Internal motion is estimated to be slow with a correlation time greater than 10(exp -8) s(exp -1). The surface thiophenol ligands react to form a dithiophenol when the nanocrystals were subjected to O2 and ultraviolet. A method for measuring (N-14)-(H-1) J-couplings is demonstrated on pyridine and the peptide oxytocin; selective 2D T(sub 1) and T(sub 2) experiments are presented for measuring relaxation times in crowded spectra with overlapping peaks in 1D, but relaxation effects interfere. Possibility of carbon-carbon cross relaxation in C-13 enriched solids is demonstrated by experiments on zinc acetate and L-alanine.

  10. Technique for magnetic susceptibility determination in the highly doped semiconductors by electron spin resonance

    SciTech Connect

    Veinger, A. I.; Zabrodskii, A. G.; Tisnek, T. V.; Goloshchapov, S. I.; Semenikhin, P. V.

    2014-08-20

    A method for determining the magnetic susceptibility in the highly doped semiconductors is considered. It is suitable for the semiconductors near the metal - insulator transition when the conductivity changes very quickly with the temperature and the resonance line form distorts. A procedure that is based on double integration of the positive part of the derivative of the absorption line having a Dyson shape and takes into account the depth of the skin layer is described. Analysis is made for the example of arsenic-doped germanium samples at a rather high concentration corresponding to the insulator-metal phase transition.

  11. Spin noise explores local magnetic fields in a semiconductor

    PubMed Central

    Ryzhov, Ivan I.; Kozlov, Gleb G.; Smirnov, Dmitrii S.; Glazov, Mikhail M.; Efimov, Yurii P.; Eliseev, Sergei A.; Lovtcius, Viacheslav A.; Petrov, Vladimir V.; Kavokin, Kirill V.; Kavokin, Alexey V.; Zapasskii, Valerii S.

    2016-01-01

    Rapid development of spin noise spectroscopy of the last decade has led to a number of remarkable achievements in the fields of both magnetic resonance and optical spectroscopy. In this report, we demonstrate a new – magnetometric – potential of the spin noise spectroscopy and use it to study magnetic fields acting upon electron spin-system of an n-GaAs layer in a high-Q microcavity probed by elliptically polarized light. Along with the external magnetic field, applied to the sample, the spin noise spectrum revealed the Overhauser field created by optically oriented nuclei and an additional, previously unobserved, field arising in the presence of circularly polarized light. This “optical field” is directed along the light propagation axis, with its sign determined by sign of the light helicity. We show that this field results from the optical Stark effect in the field of the elliptically polarized light. This conclusion is supported by theoretical estimates. PMID:26882994

  12. Study on the oxygen vacancy redistribution and the mechanism of electrical manipulation of ferromagnetism in diluted magnetic oxides

    SciTech Connect

    Ren, Shuxia; Dong, Jingyu; Chen, Wei Zhang, Liyong; Guo, Jiajun; Zhang, Li; Zhao, Jing; Zhao, Xu

    2015-12-21

    Electrical manipulation of room temperature ferromagnetism (RTFM) has been observed in several kinds of transition metal doped diluted magnetic oxide films. We demonstrate using X-ray photoelectron spectroscopy that the redistribution of the oxygen vacancies in a film under an electric field plays a crucial role in the enhancement of the RTFM. Based on a detailed analysis of the X-ray photoelectron spectroscopy data for the oxygen vacancy distribution in different resistive states, a unified mechanism has been proposed. This work points out a new direction for improving the magnetic properties of these materials by controlling oxygen vacancies in the interior of the films.

  13. Magnetic Properties of Randomly Diluted Antiferromagnetic System: COBALT(P)MAGNESIUM(1-P)OXYGEN.

    NASA Astrophysics Data System (ADS)

    Kannan, Raman

    In this work, the effect of randomly diluting CoO (a fcc antiferromagnet with Neel temperature T _{rm N} = 289 K) with MgO has been investigated using temperature dependent dc magnetic susceptibility measurements. About twenty samples of Co _{rm p}Mg _{rm 1-p}O with p = 0.10, 0.13, 0.17, 0.22, 0.23, 0.31, 0.33, 0.36, 0.41, 0.46, 0.49, 0.53, 0.56, 0.60, 0.64, 0.70, 0.80 and 0.87, were investigated in the temperature range of 1.6 K to 300 K. These powder samples were prepared starting from the nitrates, Co(NO _3)_2cdot6H _2O and Mg(NO_3)_2 cdot6H_2O. The samples were characterized by magnetic measurements for the presence of ferromagnetic impurities, by X-ray diffraction technique for the determination of crystal structure and lattice constants, and by atomic absorption spectroscopy for the determination of the composition parameter p. The lattice constant is found to vary linearly with p, in accordance with Vegard's Law. The magnetic susceptibility, chi , measurements were carried out with a Faraday balance, employing Lewis coils. The samples were cooled either in zero field (zfc) or in a field of 50 Oe (fc) to the lowest temperature (1.6 K or 4.2 K), followed by chi measurements in 50 Oe with increasing temperatures. A Neel temperature T_{ rm N}, as determined by d(chi T)/dT, is observed for all p >=q 0.17. By extrapolation and by the behavior of the low temperature magnetization, it is determined that the percolation threshold p_{rm c} = 0.13 +/- 0.01. This is in agreement with the theoretical estimate of p_{ rm c} = 0.136 for fcc lattice with nn and nnn included. The variation of T_{ rm N} with p is non-linear for p < 0.6. However no theoretical variation of T _{rm N} vs p is available for fcc lattice with both nn and nnn interactions included. For the high temperature region (T > T_{rm N}), the data is fit to the Curie-Weiss law and the Curie-Weiss temperature theta(p), the molar and gram Curie constants C_{rm M}(p) and C_{rm g}(p) respectively and the effective

  14. Extremely large magnetoresistance and magnetic logic by coupling semiconductor nonlinear transport effect and anomalous Hall Effect

    NASA Astrophysics Data System (ADS)

    Zhang, Xiaozhong; Luo, Zhaochu

    Size limitation of silicon FET hinders the further scaling down of silicon based CPU. To solve this problem, spin based magnetic logic devices were proposed but almost all of them could not be realized experimentally except for NOT logic operation. A magnetic field controlled reconfigurable semiconductor logic using InSb was reported. However, InSb is very expensive and not compatible with the silicon technology. Based on our Si based magnetoresistance (MR) device, we developed a Si based reconfigurable magnetic logic device, which could do all four Boolean logic operations including AND, OR, NOR and NAND. By coupling nonlinear transport effect of semiconductor and anomalous Hall effect of magnetic material, we propose a PMA material based MR device with a remarkable non local MR of >20000 % at ~1 mT. Based on this MR device, we further developed a PMA material based magnetic logic device which could do all four Boolean logic operations. This makes it possible that magnetic material does both memory and logic. This may result in a memory-logic integrated system leading to a non von Neumann computer

  15. Optically Detected Magnetic Resonance and Thermal Activation Spectroscopy Study of Organic Semiconductors

    SciTech Connect

    Chang-Hwan Kim

    2003-12-12

    Organic electronic materials are a new class of emerging materials. Organic light emitting devices (OLEDs) are the most promising candidates for future flat panel display technologies. The photophysical characterization is the basic research step one must follow to understand this new class of materials and devices. The light emission properties are closely related to the transport properties of these materials. The objective of this dissertation is to probe the relation between transport and photophysical properties of organic semiconductors. The transport characteristics were evaluated by using thermally stimulated current and thermally stimulated luminescence techniques. The photoluminescence detected magnetic resonance and photoluminescence quantum yield studies provide valuable photophysical information on this class of materials. OLEDs are already in the market. However, detailed studies on the degradation mechanisms are still lacking. Since both optically detected magnetic resonance and thermal activation spectroscopy probe long-lived defect-related states in organic semiconductors, the combined study generates new insight on the OLED operation and degradation mechanisms.

  16. Room-temperature ferromagnetism in Zn{sub 1-x}Co{sub x}O magnetic semiconductors prepared by sputtering

    SciTech Connect

    Dinia, A.; Schmerber, G.; Meny, C.; Pierron-Bohnes, V.; Beaurepaire, E.

    2005-06-15

    We have used magnetron cosputtering to grow Zn{sub 1-x}Co{sub x}O magnetic dilute semiconductors. The growth has been performed on SiO{sub 2}/Si and Al{sub 2}O{sub 3}(0001) substrates. The Co concentration has been varied between 0.1 and 0.25 and the substrate temperature between room temperature and 600 deg. C. X-ray diffraction analysis has shown that for the films grown on Si substrates the structural quality of the film is improved by increasing the growth temperature and/or postgrowth annealing. The films are textured with c axis of the wurtzite structure along the growth direction. However, for the films grown on Al{sub 2}O{sub 3} substrate quasi-epitaxial films have been obtained for 600 deg. C substrate temperature. Magnetization measurements have shown that the ferromagnetism is directly correlated to the structural quality and appears by increasing the growth temperature and/or postgrowth annealing. Moreover, for the highly textured film a clear magnetic perpendicular anisotropy has been evidenced with the easy magnetization axis along the growth direction. To evidence the intrinsic nature of the ferromagnetism in the films, transmission optical measurements have been used. They show three absorption bands that are characteristics of d-d transitions of tetrahedrally coordinated Co{sup 2+}. This has been supported by nuclear magnetic resonance and magnetic thermal variation.

  17. Magnetic fields and the technology challenges they pose to beam-based equipment: a semiconductor perspective

    NASA Astrophysics Data System (ADS)

    Esqueda, Vincent; Montoya, Julian A.

    2005-08-01

    As semiconductor devices shrink in size to accommodate faster processing speeds, the need for higher resolution beam-based metrology equipment and beam-based writing equipment will increase. The electron and ion beams used within these types of equipment are sensitive to very small variations in magnetic force applied to the beam. This phenomenon results from changes in Alternating Current (AC) and Direct Current (DC) magnetic flux density at the beam column which causes deflections of the beam that can impact equipment performance. Currently the most sensitive beam-based microscope manufacturers require an ambient magnetic field environment that does not have variations that exceed 0.2 milli-Gauss (mG). Studies have shown that such low levels of magnetic flux density can be extremely difficult to achieve. As examples, scissor lifts, vehicles, metal chairs, and doors moving in time and space under typical use conditions can create distortions in the Earth's magnetic field that can exceed 0.2 mG at the beam column. In addition it is known that changes in the Earth's magnetic field caused by solar flares, earthquakes, and variations in the Earth's core itself all cause changes in the magnetic field that can exceed 0.2 mG. This paper will provide the reader with the basic understanding of the emerging problem, will discuss the environmental and facility level challenges associated in meeting such stringent magnetic field environments, will discuss some of the mitigation techniques used to address the problem, and will close by discussing needs for further research in this area to assure semiconductor and nanotechnology industries are pre-positioned for even more stringent magnetic field environmental requirements.

  18. Tuning the magnetic and structural phase transitions of PrFeAsO via Fe/Ru spin dilution

    SciTech Connect

    Yiu, Yuen; Bonfa, Pietro; Sanna, Samuele; De Renzi, Roberto; Caretta, Pietro; McGuire, Michael A; Huq, Ashfia; Nagler, Stephen E

    2014-01-01

    Neutron diffraction and muon spin relaxation measurements are used to obtain a detailed phase diagram of PrFe1{xRuxAsO. The isoelectronic substitution of Ru for Fe acts eectively as spin dilution, suppressing both the structural and magnetic phase transitions. The temperature, TS, of the tetragonal-orthorhombic structural phase transition decreases gradually as a function of x. Slightly below TS coherent precessions of the muon spin are observed corresponding to static magnetism, possibly re ecting a signicant magneto-elastic coupling in the FeAs layers. Short range order in both the Fe and Pr moments persists for higher levels of x. The static magnetic moments disappear at a concentration coincident with that expected for percolation of the J1 - J2 square lattice model.

  19. Detecting excitation and magnetization of individual dopants in a semiconductor two-dimensional electron gas

    NASA Astrophysics Data System (ADS)

    Wiebe, Jens

    2011-03-01

    Magnetic atoms doped into a semiconductor are the building blocks for bottom up spintronic and quantum logic devices. They also provide model systems for the investigation of fundamental effects. In order to correlate the dopant's atomic structure with its magnetism magnetically sensitive techniques with atomic resolution are a prerequisite. Here, I show electrical excitation and read-out [ 1 ] of single magnetic dopant associated spins in a two-dimensional electron gas (2DEG) confined to a semiconductor surface [ 2 ] using spin-resolved scanning tunneling spectroscopy [ 3 ] . I will review our real-space study of the quantum Hall transition in the 2DEG [ 2 ] and of the magnetic properties of the dopants [ 1 ] . Finally, I will demonstrate that the dopant serves as an atomic scale probe for local magnetometry of the 2DEG. This work was done in collaboration with A. A. Khajetoorians, B. Chillian, S. Schuwalow, F. Lechermann, K. Hashimoto, C. Sohrmann, T. Inaoka, F. Meier, Y. Hirayama, R. A. Römer, M. Morgenstern, and R. Wiesendanger. [ 1 ] A. A. Khajetoorians et al., Nature 467, 1084 (2010). [ 2 ] K. Hashimoto et al., Phys. Rev. Lett. 101, 256802 (2008). [ 3 ] J. Wiebe et al., Rev. Sci. Instrum. 75, 4871 (2004). We acknowledge financial support from ERC Advanced Grant ``FURORE'', by the DFG via SFB668 and GrK1286, and by the city of Hamburg via the cluster of excellence ``Nanospintronics''.

  20. Emergence of competing magnetic interactions induced by Ge doping in the semiconductor FeGa3

    NASA Astrophysics Data System (ADS)

    Alvarez-Quiceno, J. C.; Cabrera-Baez, M.; Ribeiro, R. A.; Avila, M. A.; Dalpian, G. M.; Osorio-Guillén, J. M.

    2016-07-01

    FeGa3 is an unusual intermetallic semiconductor that presents intriguing magnetic responses to the tuning of its electronic properties. When doped with Ge, the system evolves from diamagnetic to paramagnetic to ferromagnetic ground states that are not well understood. In this work, we have performed a joint theoretical and experimental study of FeGa3 -xGex using density functional theory and magnetic susceptibility measurements. For low Ge concentrations we observe the formation of localized moments on some Fe atoms and, as the dopant concentration increases, a more delocalized magnetic behavior emerges. The magnetic configuration strongly depends on the dopant distribution, leading even to the appearance of antiferromagnetic interactions in certain configurations.

  1. Tunable surface plasmon polaritons in metal-strip waveguides with magnetized semiconductor substrates in Voigt configuration

    NASA Astrophysics Data System (ADS)

    Mathew, Gishamol; Mathew, Vincent

    2012-05-01

    The properties of surface plasmon polaritons (SPPs) in a magnetically tunable strip waveguide geometry comprising of a metal film of finite width deposited on a magnetized semiconductor and covered by an isotropic dielectric material were studied in Voigt configuration. The method of lines was used to compute the dispersion relation of fundamental modes, and the dependence of the propagation constant on metal film dimensions, material parameters and biasing magnetic field was considered. The bounded SPPs are nonreciprocal with respect to the direction of the biasing magnetic field, producing a nonreciprocal phase shift of the order of 2-18 rad mm-1 at a wavelength of excitation 1.55 μm. Moreover, controlled propagation of SPP modes and their effective tuning are possible in this strip geometry, which enables the design and development of tunable optoelectronic devices.

  2. Unexpected Magnetic Semiconductor Behavior in Zigzag Phosphorene Nanoribbons Driven by Half-Filled One Dimensional Band

    PubMed Central

    Du, Yongping; Liu, Huimei; Xu, Bo; Sheng, Li; Yin, Jiang; Duan, Chun-Gang; Wan, Xiangang

    2015-01-01

    Phosphorene, as a novel two-dimensional material, has attracted a great interest due to its novel electronic structure. The pursuit of controlled magnetism in Phosphorene in particular has been persisting goal in this area. In this paper, an antiferromagnetic insulating state has been found in the zigzag phosphorene nanoribbons (ZPNRs) from the comprehensive density functional theory calculations. Comparing with other one-dimensional systems, the magnetism in ZPNRs display several surprising characteristics: (i) the magnetic moments are antiparallel arranged at each zigzag edge; (ii) the magnetism is quite stable in energy (about 29 meV/magnetic-ion) and the band gap is big (about 0.7 eV); (iii) the electronic and magnetic properties is almost independent on the width of nanoribbons; (iv) a moderate compressive strain will induce a magnetic to nonmagnetic as well as semiconductor to metal transition. All of these phenomena arise naturally due to one unique mechanism, namely the electronic instability induced by the half-filled one-dimensional bands which cross the Fermi level at around π/2a. The unusual electronic and magnetic properties in ZPNRs endow them possible potential for the applications in nanoelectronic devices. PMID:25747727

  3. Unexpected magnetic semiconductor behavior in zigzag phosphorene nanoribbons driven by half-filled one dimensional band.

    PubMed

    Du, Yongping; Liu, Huimei; Xu, Bo; Sheng, Li; Yin, Jiang; Duan, Chun-Gang; Wan, Xiangang

    2015-03-09

    Phosphorene, as a novel two-dimensional material, has attracted a great interest due to its novel electronic structure. The pursuit of controlled magnetism in Phosphorene in particular has been persisting goal in this area. In this paper, an antiferromagnetic insulating state has been found in the zigzag phosphorene nanoribbons (ZPNRs) from the comprehensive density functional theory calculations. Comparing with other one-dimensional systems, the magnetism in ZPNRs display several surprising characteristics: (i) the magnetic moments are antiparallel arranged at each zigzag edge; (ii) the magnetism is quite stable in energy (about 29 meV/magnetic-ion) and the band gap is big (about 0.7 eV); (iii) the electronic and magnetic properties is almost independent on the width of nanoribbons; (iv) a moderate compressive strain will induce a magnetic to nonmagnetic as well as semiconductor to metal transition. All of these phenomena arise naturally due to one unique mechanism, namely the electronic instability induced by the half-filled one-dimensional bands which cross the Fermi level at around π/2a. The unusual electronic and magnetic properties in ZPNRs endow them possible potential for the applications in nanoelectronic devices.

  4. Unexpected Magnetic Semiconductor Behavior in Zigzag Phosphorene Nanoribbons Driven by Half-Filled One Dimensional Band

    NASA Astrophysics Data System (ADS)

    Du, Yongping; Liu, Huimei; Xu, Bo; Sheng, Li; Yin, Jiang; Duan, Chun-Gang; Wan, Xiangang

    2015-03-01

    Phosphorene, as a novel two-dimensional material, has attracted a great interest due to its novel electronic structure. The pursuit of controlled magnetism in Phosphorene in particular has been persisting goal in this area. In this paper, an antiferromagnetic insulating state has been found in the zigzag phosphorene nanoribbons (ZPNRs) from the comprehensive density functional theory calculations. Comparing with other one-dimensional systems, the magnetism in ZPNRs display several surprising characteristics: (i) the magnetic moments are antiparallel arranged at each zigzag edge; (ii) the magnetism is quite stable in energy (about 29 meV/magnetic-ion) and the band gap is big (about 0.7 eV) (iii) the electronic and magnetic properties is almost independent on the width of nanoribbons; (iv) a moderate compressive strain will induce a magnetic to nonmagnetic as well as semiconductor to metal transition. All of these phenomena arise naturally due to one unique mechanism, namely the electronic instability induced by the half-filled one-dimensional bands which cross the Fermi level at around π/2a. The unusual electronic and magnetic properties in ZPNRs endow them possible potential for the applications in nanoelectronic devices.

  5. Unexpected magnetic semiconductor behavior in zigzag phosphorene nanoribbons driven by half-filled one dimensional band.

    PubMed

    Du, Yongping; Liu, Huimei; Xu, Bo; Sheng, Li; Yin, Jiang; Duan, Chun-Gang; Wan, Xiangang

    2015-01-01

    Phosphorene, as a novel two-dimensional material, has attracted a great interest due to its novel electronic structure. The pursuit of controlled magnetism in Phosphorene in particular has been persisting goal in this area. In this paper, an antiferromagnetic insulating state has been found in the zigzag phosphorene nanoribbons (ZPNRs) from the comprehensive density functional theory calculations. Comparing with other one-dimensional systems, the magnetism in ZPNRs display several surprising characteristics: (i) the magnetic moments are antiparallel arranged at each zigzag edge; (ii) the magnetism is quite stable in energy (about 29 meV/magnetic-ion) and the band gap is big (about 0.7 eV); (iii) the electronic and magnetic properties is almost independent on the width of nanoribbons; (iv) a moderate compressive strain will induce a magnetic to nonmagnetic as well as semiconductor to metal transition. All of these phenomena arise naturally due to one unique mechanism, namely the electronic instability induced by the half-filled one-dimensional bands which cross the Fermi level at around π/2a. The unusual electronic and magnetic properties in ZPNRs endow them possible potential for the applications in nanoelectronic devices. PMID:25747727

  6. Sensitizing solid state nuclear magnetic resonance of dilute nuclei by spin-diffusion assisted polarization transfers.

    PubMed

    Lupulescu, Adonis; Frydman, Lucio

    2011-10-01

    Recent years have witnessed efforts geared at increasing the sensitivity of NMR experiments, by relying on the suitable tailoring and exploitation of relaxation phenomena. These efforts have included the use of paramagnetic agents, enhanced (1)H-(1)H incoherent and coherent transfers processes in 2D liquid state spectroscopy, and homonuclear (13)C-(13)C spin diffusion effects in labeled solids. The present study examines some of the opportunities that could open when exploiting spontaneous (1)H-(1)H spin-diffusion processes, to enhance relaxation and to improve the sensitivity of dilute nuclei in solid state NMR measurements. It is shown that polarization transfer experiments executed under sufficiently fast magic-angle-spinning conditions, enable a selective polarization of the dilute low-γ spins by their immediate neighboring protons. Repolarization of the latter can then occur during the time involved in monitoring the signal emitted by the low-γ nuclei. The basic features involved in the resulting approach, and its potential to improve the effective sensitivity of solid state NMR measurements on dilute nuclei, are analyzed. Experimental tests witness the advantages that could reside from utilizing this kind of approach over conventional cross-polarization processes. These measurements also highlight a number of limitations that will have to be overcome for transforming selective polarization transfers of this kind into analytical methods of choice.

  7. Magnetic field control of the optical absorption in two-dimensional semiconductor rings

    NASA Astrophysics Data System (ADS)

    Olendski, Oleg; Barakat, Thabit

    2014-03-01

    Linear and nonlinear optical absorption coefficients of the two-dimensional semiconductor ring in the perpendicular magnetic field B are calculated within independent electron approximation. Characteristic feature of the energy spectrum are crossings of the levels with adjacent nonpositive magnetic quantum numbers m as the intensity B changes. It is shown that the absorption coefficient of the associated optical transition is drastically decreased at the fields corresponding to the crossing. Proposed model of the Volcano disc allows to get simple mathematical analytical results which allow clear physical interpretation. An interplay between positive linear and intensity-dependent negative cubic absorption coefficients is discussed; in particular, critical light intensity at which additional resonances appear in the total absorption dependence on the light frequency, is calculated as a function of the magnetic field and levels' broadening. Authors extend their appreciation to the Deanship of Scientific Research at King Saud University for funding this work through research group no RGP-VPP-217.

  8. Magnetic order in a frustrated two-dimensional atom lattice at a semiconductor surface.

    PubMed

    Li, Gang; Höpfner, Philipp; Schäfer, Jörg; Blumenstein, Christian; Meyer, Sebastian; Bostwick, Aaron; Rotenberg, Eli; Claessen, Ralph; Hanke, Werner

    2013-01-01

    Two-dimensional electron systems, as exploited for device applications, can lose their conducting properties because of local Coulomb repulsion, leading to a Mott-insulating state. In triangular geometries, any concomitant antiferromagnetic spin ordering can be prevented by geometric frustration, spurring speculations about 'melted' phases, known as spin liquid. Here we show that for a realization of a triangular electron system by epitaxial atom adsorption on a semiconductor, such spin disorder, however, does not appear. Our study compares the electron excitation spectra obtained from theoretical simulations of the correlated electron lattice with data from high-resolution photoemission. We find that an unusual row-wise antiferromagnetic spin alignment occurs that is reflected in the photoemission spectra as characteristic 'shadow bands' induced by the spin pattern. The magnetic order in a frustrated lattice of otherwise non-magnetic components emerges from longer-range electron hopping between the atoms. This finding can offer new ways of controlling magnetism on surfaces.

  9. Magnetic order in a frustrated two-dimensional atom lattice at a semiconductor surface.

    PubMed

    Li, Gang; Höpfner, Philipp; Schäfer, Jörg; Blumenstein, Christian; Meyer, Sebastian; Bostwick, Aaron; Rotenberg, Eli; Claessen, Ralph; Hanke, Werner

    2013-01-01

    Two-dimensional electron systems, as exploited for device applications, can lose their conducting properties because of local Coulomb repulsion, leading to a Mott-insulating state. In triangular geometries, any concomitant antiferromagnetic spin ordering can be prevented by geometric frustration, spurring speculations about 'melted' phases, known as spin liquid. Here we show that for a realization of a triangular electron system by epitaxial atom adsorption on a semiconductor, such spin disorder, however, does not appear. Our study compares the electron excitation spectra obtained from theoretical simulations of the correlated electron lattice with data from high-resolution photoemission. We find that an unusual row-wise antiferromagnetic spin alignment occurs that is reflected in the photoemission spectra as characteristic 'shadow bands' induced by the spin pattern. The magnetic order in a frustrated lattice of otherwise non-magnetic components emerges from longer-range electron hopping between the atoms. This finding can offer new ways of controlling magnetism on surfaces. PMID:23535641

  10. Semiconductor crystal growth in crossed electric and magnetic fields: Center Director's Discretionary Fund

    NASA Technical Reports Server (NTRS)

    Mazuruk, K.; Volz, M. P.

    1996-01-01

    A unique growth cell was designed in which crossed electric and magnetic fields could be separately or simultaneously applied during semiconductor crystal growth. A thermocouple was inserted into an InSb melt inside the growth cell to examine the temperature response of the fluid to applied electromagnetic fields. A static magnetic field suppressed time-dependent convection when a destabilizing thermal field was applied. The simultaneous application of electric and magnetic fields resulted in forced convection in the melt. The InSb ingots grown in the cell were polycrystalline. An InGaSb crystal, 0.5 cm in diameter and 23-cm long, was grown without electromagnetic fields applied. The axial composition results indicated that complete mixing in the melt occurred for this large aspect ratio.

  11. Monte Carlo simulations of the LiHoxY1-xF4 diluted dipolar magnet

    NASA Astrophysics Data System (ADS)

    Andresen, Juan Carlos; Schechter, Moshe; Katzgraber, Helmut G.

    2012-02-01

    Recent intriguing experimental results on LiHoxY1-xF4, a diluted dipolar magnet, along with new analytical insights, suggest that neither a mean-field treatment nor simulations using simplified versions of the underlying Hamiltonian adequately describe these materials. Not only does this imply that novel disordering mechanism might be present, it requires a detailed numerical analysis that incorporates all terms in the Hamiltonian. We present large-scale Monte Carlo simulations of the diluted dipolar magnet with competing interactions on a LiHo lattice with the inclusion of a random field term. For low concentrations of Ho atoms we reproduce the peculiar linear dependence of the transition temperature as a function of the random-field strength found in recent experimental results by Silevich et al. [Nature 448, 567 (2007)]. We then find a zero-temperature phase transition between the ferromagnetic and quasi-spin-glass phases, suggesting that it is the underlying spin-glass phase that dictates the above linear dependence of Tc on the random field. For large concentrations we recover the quadratic dependence of the critical temperature as a function of the random field strength.

  12. Magnetization dynamics down to a zero field in dilute (Cd,Mn)Te quantum wells.

    PubMed

    Goryca, M; Ferrand, D; Kossacki, P; Nawrocki, M; Pacuski, W; Maślana, W; Gaj, J A; Tatarenko, S; Cibert, J; Wojtowicz, T; Karczewski, G

    2009-01-30

    The evolution of the magnetization in (Cd,Mn)Te quantum wells after a short pulse of magnetic field was determined from the giant Zeeman shift of spectroscopic lines. The dynamics in the absence of a static magnetic field was found to be up to 3 orders of magnitude faster than that at 1 T. Hyperfine interaction and strain are mainly responsible for the fast decay. The influence of a hole gas is clearly visible: at zero field anisotropic holes stabilize the system of Mn ions, while in a magnetic field of 1 T they are known to speed up the decay by opening an additional relaxation channel.

  13. Models of Mass Transport During Microgravity Crystal Growth of Alloyed Semiconductors in a Magnetic Field

    NASA Technical Reports Server (NTRS)

    Ma, Nancy

    2003-01-01

    Alloyed semiconductor crystals, such as germanium-silicon (GeSi) and various II-VI alloyed crystals, are extremely important for optoelectronic devices. Currently, high-quality crystals of GeSi and of II-VI alloys can be grown by epitaxial processes, but the time required to grow a certain amount of single crystal is roughly 1,000 times longer than the time required for Bridgman growth from a melt. Recent rapid advances in optoelectronics have led to a great demand for more and larger crystals with fewer dislocations and other microdefects and with more uniform and controllable compositions. Currently, alloyed crystals grown by bulk methods have unacceptable levels of segregation in the composition of the crystal. Alloyed crystals are being grown by the Bridgman process in space in order to develop successful bulk-growth methods, with the hope that the technology will be equally successful on earth. Unfortunately some crystals grown in space still have unacceptable segregation, for example, due to residual accelerations. The application of a weak magnetic field during crystal growth in space may eliminate the undesirable segregation. Understanding and improving the bulk growth of alloyed semiconductors in microgravity is critically important. The purpose of this grant to to develop models of the unsteady species transport during the bulk growth of alloyed semiconductor crystals in the presence of a magnetic field in microgravity. The research supports experiments being conducted in the High Magnetic Field Solidification Facility at Marshall Space Flight Center (MSFC) and future experiments on the International Space Station.

  14. Magnetic filter apparatus and method for generating cold plasma in semiconductor processing

    DOEpatents

    Vella, M.C.

    1996-08-13

    Disclosed herein is a system and method for providing a plasma flood having a low electron temperature to a semiconductor target region during an ion implantation process. The plasma generator providing the plasma is coupled to a magnetic filter which allows ions and low energy electrons to pass therethrough while retaining captive the primary or high energy electrons. The ions and low energy electrons form a ``cold plasma`` which is diffused in the region of the process surface while the ion implantation process takes place. 15 figs.

  15. Material degradation of liquid organic semiconductors analyzed by nuclear magnetic resonance spectroscopy

    SciTech Connect

    Fukushima, Tatsuya; Yamamoto, Junichi; Fukuchi, Masashi; Kaji, Hironori; Hirata, Shuzo; Jung, Heo Hyo; Adachi, Chihaya; Hirata, Osamu; Shibano, Yuki

    2015-08-15

    Liquid organic light-emitting diodes (liquid OLEDs) are unique devices consisting only of liquid organic semiconductors in the active layer, and the device performances have been investigated recently. However, the device degradation, especially, the origin has been unknown. In this study, we show that material degradation occurs in liquid OLEDs, whose active layer is composed of carbazole with an ethylene glycol chain. Nuclear magnetic resonance (NMR) experiments clearly exhibit that the dimerization reaction of carbazole moiety occurs in the liquid OLEDs during driving the devices. In contrast, cleavages of the ethylene glycol chain are not detected within experimental error. The dimerization reaction is considered to be related to the device degradation.

  16. Determining Exchange Splitting in a Magnetic Semiconductor by Spin-Filter Tunneling

    SciTech Connect

    Santos, T. S.; Moodera, J. S.; Venkataraman, K.; Negusse, E.; Holroyd, J.; Dvorak, J.; Liberati, M.; Idzerda, Y. U.; Arenholz, E.

    2008-06-24

    A large exchange splitting of the conduction band in ultrathin films of the ferromagnetic semiconductor EuO was determined quantitatively, by using EuO as a tunnel barrier and fitting the current-voltage characteristics and temperature dependence to tunneling theory. This exchange splitting leads to different tunnel barrier heights for spin-up and spin-down electrons, and is large enough to produce a near fully spin-polarized current. Moreover, the magnetic properties of these ultrathin films (<6 nm) show a reduction in Curie temperature with decreasing thickness, in agreement with theoretical calculation [R. Schiller et al., Phys. Rev. Lett. 86, 3847 (2001)].

  17. On a few properties of very dilute matter frozen in space magnetic fields

    NASA Astrophysics Data System (ADS)

    Berdichevsky, D. B.; Schefers, K.

    2014-12-01

    For a case study, the flux-rope (FR) that passed Earth on June 2, 2014(1) (see also listing of magnetic clouds and their properties in the Wind SC MFI science team site at http://wind.gsfc.nasa.gov/mfi/mag_cloud_S1.html), we proceed to interpret plasma and magnetic field observations in the context of MHD. The observations used are 3s average interplanetary magnetic field (Wind/MFI instrument) and 3s plasma (Wind/SWE instruments) data(2). After identifying the observed correlation between electron density, temperature and pressure in the plasma frame of reference we proceed to establish the existence of a relationship between these plasma observables with the magnetic field pressure. By assuming ideal MHD conditions to be valid we proceed to confirm that the medium is diamagnetic, as is to be expected for the MHD state of matter and magnetic field which is assumed to be a superconducting medium. Additionally we infer the presence of magnetization work, as well as a few other constitutive properties of this state of matter. 1 Berdichevsky D. B., R. P. Lepping, and C. J. Farrugia, Geometric considerations of the evolution of magnetic flux ropes, Phys. Rev. E67, doi:10.1103/PhysRevE.036405. Lepping R. P. et al, A summary of Wind magnetic clouds for years 1995 - 2003: model-fitted parameters, associated errors and classifications, Ann. Geophysicae, 24, 215-245, 2006.2006 2 Ogilvie, K. W., et al, SWE, A comprehensive plasma instrument for the Wind spacecraft, Space Sci. Rev., 71, 55 - 77, 1995; Lepping R. P., et al , The Wind Magnetic Field Investigation, Space Sci. Rev., 71, 207 - 229, 1995.

  18. Rheology of a very dilute magnetic suspension with micro-structures of nanoparticles

    NASA Astrophysics Data System (ADS)

    Cunha, Francisco Ricardo; Rosa, Adriano Possebon; Dias, Nuno Jorge

    2016-01-01

    The main objective of this present paper is to measure the apparent viscosity of a magnetic suspension in the presence of particle agglomerates of different sizes for several applied magnetic fields, shear rates and particle volume fractions. A secondary goal is to investigate suspension microstructure transition, when subjected to a magnetic field. We show that an employed like virial expansion of two empirical coefficients based only on the experimental data gives a good quantitative description of the magnetorheological suspension effective viscosity up to particle volume fraction less than 0.01. The observed shear rate dependence viscosity is a direct consequence of the stretching, breaking particle structures of different sizes and shapes formed by the action of magnetic attractive force between the polarized particles as observed previously in the context of dense ferrofluids. We have identified even in the limit of a very small particle volume fraction a strong non-linear behavior of the examined suspension due to formation of suspended blobs-like aggregates of different sizes and anisotropic chains of particles. These structures are induced by the presence of an external magnetic field and particle-particle magnetic interactions. A histogram of the structure size distribution is also examined. The results of this paper are important to those who are interested on the magnetorheological suspensions.

  19. Energy spectrum of layered semiconductors in a magnetic field parallel to the layers: Voigt geometry

    NASA Astrophysics Data System (ADS)

    Yoo, K. H.; Ram-Mohan, L. R.

    2010-11-01

    The electronic band structure of zinc-blende layered semiconductor heterostructures is investigated theoretically in the presence of an in-plane magnetic field, a configuration we label as the Voigt geometry. We use a Lagrangian formulation for modeling the band structure in the individual layers within the kṡP model. This approach has been shown by us to provide the correct ordering of the derivatives appearing in the multiband description of Schrödinger’s equations for the envelope functions through the application of the principle of stationary action. Finite element modeling of the action integral provides a natural and efficient approach to the inclusion of in-plane magnetic fields in the energy-level analysis. Calculations for quantum wells and superlattices are presented, and the complex energy-level structure obtained for the layered structures.

  20. Spin-orbit dilution effects on the magnetism of frustrated spinel Ge(Co1-xMgx)2O4

    NASA Astrophysics Data System (ADS)

    Agata, Ryotaro; Takita, Shota; Ishikawa, Takashi; Watanabe, Tadataka

    2015-03-01

    We investigated magnetic properties of spinel oxides Ge(Co1-xMgx)2O4 with x = 0 ~ 0.5 to study the spin-orbit dilution effects on the magnetism of spin-orbit frustrated spinel GeCo2O4. We discovered that the magnetic moment per single Co2+ ion is decreased with increasing nonmagnetic Mg2+ concentration, which indicates the spin-orbit decoupling caused by the spin-orbit dilution. Additionally, small-amount substitution of Mg2+ for Co2+ causes the rapid increase of the positive Weiss temperature indicating the enhancement of ferromagnetic interactions, while the Mg2+ substitution suppresses the antiferromagnetic ordering resulting in the appearance of spin glass behavior. The present results suggest that the spin-orbit dilution causes the spin-orbit decoupling and the reinforcement of ferromagnetic frustration in GeCo2O4.

  1. Structural and magnetic properties of a prospective spin gapless semiconductor MnCrVAl

    NASA Astrophysics Data System (ADS)

    Huh, Y.; Gilbert, S.; Kharel, P.; Jin, Y.; Lukashev, P.; Valloppilly, S.; Sellmyer, D. J.

    Recently a new class of material, spin gapless semiconductors (SGS), has attracted much attention because of their potential for spintronic devices. We have synthesized a Heusler compound, MnCrVAl, which is theoretically predicted to exhibit SGS by arc melting, rapid quenching and thermal annealing. First principles calculations are employed to describe its structural, electronic and magnetic properties. X-ray diffraction indicates that the rapidly quenched samples crystallize in the disordered cubic structure. The crystal structure is stable against heat treatment up to 650oC. The samples show very small saturation magnetization, 0.3 emu/g, at room temperature under high magnetic field, 30 kOe. Above room temperature, the magnetization increases with increasing temperature undergoing a magnetic transition at 560oC, similar to an antiferromagnetic-to-paramagnetic transition. The prospect of this material for spintronic applications will be discussed. This research is supported by SDSU Academic/Scholarly Excellence Fund, and Research/Scholarship Support Fund. Research at UNL is supported by DOE (DE-FG02-04ER46152, synthesis, characterization), NSF (ECCS-1542182, facilities), and NRI.

  2. Tunable Acoustic Attenuation by Dilute Suspensions of Oblate-Spheroidal Ferromagnetic Particles Under an External Magnetic Field: An Experimental Study

    NASA Astrophysics Data System (ADS)

    Yuan, Wuhan; Shan, Jerry; Liu, Liping

    2015-11-01

    The microstructure of suspensions of spheroidal ferromagnetic particles with subwavelength size can be controlled by an external field, making it possible to develop novel broadband acoustic materials with anisotropic and tunable acoustic properties. In this study we experimentally show that dilute suspensions of nickel microflakes exhibit a 20% to 30% change in attenuation coefficient at MHz frequencies upon changing the direction of an external magnetic field, at particle volume fractions of only 0.5%. Further investigations are conducted to study the mechanism behind this anisotropy. The effects of particle aligning and chaining are analyzed with the aid of optical transmission measurements. By making comparison to suspensions of spherical particles, we show that the ellipsoidal shape of the nickel microflakes plays an important role in tunable acoustic properties of these suspensions.

  3. First principles density functional calculation of magnetic moment and hyperfine fields of dilute transition metal impurities in Gd host

    NASA Astrophysics Data System (ADS)

    Mohanta, S. K.; Mishra, S. N.; Srivastava, S. K.

    2014-04-01

    We present first principles calculations of electronic structure and magnetic properties of dilute transition metal (3d, 4d and 5d) impurities in a Gd host. The calculations have been performed within the density functional theory using the full potential linearized augmented plane wave technique and the GGA+U method. The spin and orbital contributions to the magnetic moment and the hyperfine fields have been computed. We find large magnetic moments for 3d (Ti-Co), 4d (Nb-Ru) and 5d (Ta-Os) impurities with magnitudes significantly different from the values estimated from earlier mean field calculation [J. Magn. Magn. Mater. 320 (2008) e446-e449]. The exchange interaction between the impurity and host Gd moments is found to be positive for early 3d elements (Sc-V) while in all other cases an anti-ferromagnetic coupling is observed. The trends for the magnetic moment and hyperfine field of d-impurities in Gd show qualitative difference with respect to their behavior in Fe, Co and Ni. The calculated total hyperfine field, in most cases, shows excellent agreement with the experimental results. A detailed analysis of the Fermi contact hyperfine field has been made, revealing striking differences for impurities having less or more than half filled d-shell. The impurity induced perturbations in host moments and the change in the global magnetization of the unit cell have also been computed. The variation within each of the d-series is found to correlate with the d-d hybridization strength between the impurity and host atoms.

  4. Dilute plasma coupling currents to a high voltage solar array in weak magnetic fields

    NASA Technical Reports Server (NTRS)

    Grier, N. T.

    1984-01-01

    The plasma coupling current to an approximately 2000 sq cm array was measured for externally biased positive and negative voltages on the array to 1000 V in applied magnetic field strengths from 0 to 0.93 G. The plasma density varied from 2,000 to 1.3 million electrons/cu cm. It was found that the magnetic field primarily increased the plasma coupling current for negative biases. For positive bias, the current could increase or decrease depending on the voltage, field strength, and plasma density. It was also found that the plasma coupling current was not very sensitive to how the plane of the array was oriented relative to the magnetic field.

  5. Ferromagnetism in diluted magnetic Zn-Co-doped CeO2-δ

    NASA Astrophysics Data System (ADS)

    Santos, T. S.; Folly, W. S. D.; Macêdo, M. A.

    2012-08-01

    Several oxides doped with transition metals can be used in spintronics devices due to their conductive and magnetic properties at room temperature. In this work, samples of Ce1-2xZnxCoxO2-δ were obtained by an alternative sol-gel proteic process for x=0.01, 0.05 and 0.1. The structural properties of samples were analyzed by XRD and Raman spectroscopy. Magnetization measurements revealed a ferromagnetic behavior at room temperature probably induced by oxygen vacancies.

  6. Pressure induced magnetic and semiconductor-metal phase transitions in Cr2MoO6

    NASA Astrophysics Data System (ADS)

    San-Dong, Guo

    2016-05-01

    We investigate magnetic ordering and electronic structures of Cr2MoO6 under hydrostatic pressure. To overcome the band gap problem, the modified Becke and Johnson exchange potential is used to investigate the electronic structures of Cr2MoO6. The insulating nature at the experimental crystal structure is produced, with a band gap of 1.04 eV, and the magnetic moment of the Cr atom is 2.50 μ B, compared to an experimental value of about 2.47 μ B. The calculated results show that an antiferromagnetic inter-bilayer coupling-ferromagnetic intra-bilayer coupling to a ferromagnetic inter-bilayer coupling-antiferromagnetic intra-bilayer coupling phase transition is produced with the pressure increasing. The magnetic phase transition is simultaneously accompanied by a semiconductor-metal phase transition. The magnetic phase transition can be explained by the Mo-O hybridization strength, and ferromagnetic coupling between two Cr atoms can be understood by empty Mo-d bands perturbing the nearest O-p orbital. Project supported by the Fundamental Research Funds for the Central Universities, China (Grant No. 2015XKMS073).

  7. Critical behaviors of transverse crystal field and bimodal magnetic field mixed spin Ising model with bond dilution or bond percolation threshold

    NASA Astrophysics Data System (ADS)

    Xu, C. Q.; Yan, S. L.

    2016-10-01

    Within the effective field theory, we investigate critical behaviors of transverse crystal field and bimodal magnetic field mixed spin-1/2 and spin-1 Ising model with bond dilution or percolation threshold on a simple cubic lattice. A-type double tricritical points and zigzag reentrant phenomenon can be found at pure bond and large bimodal magnetic field status. The ordered phase is impaired sharply due to bond dilution. The positive transverse crystal field can induce ordered phase at ordinary bond percolation threshold. The bimodal magnetic field can suppress the induced ordered phase and form a series of closed ordered regions. An extraordinary bond percolation threshold is determined, at which the induced ordered phase vanishes completely. The different effects of bimodal magnetic field and bond percolation threshold on induced ordered phase are discussed.

  8. Field and dilution effects on the magnetic relaxation behaviours of a 1D dysprosium(iii)-carboxylate chain built from chiral ligands.

    PubMed

    Han, Tian; Leng, Ji-Dong; Ding, You-Song; Wang, Yanyan; Zheng, Zhiping; Zheng, Yan-Zhen

    2015-08-14

    A one-dimensional dysprosium(iii)-carboxylate chain in which the Dy(III) ions sit in a pseudo D(2d)-symmetry environment is synthesized and shows different slow magnetic relaxation behaviours depending on the field and dilution effects. Besides, the chiral ligand introduces the additional functions of the Cotton effect and polarization for this compound. PMID:26159885

  9. Anomalous Hall effect in ferromagnetic semiconductors.

    PubMed

    Jungwirth, T; Niu, Qian; MacDonald, A H

    2002-05-20

    We present a theory of the anomalous Hall effect in ferromagnetic (III, Mn)V semiconductors. Our theory relates the anomalous Hall conductance of a homogeneous ferromagnet to the Berry phase acquired by a quasiparticle wave function upon traversing closed paths on the spin-split Fermi surface. The quantitative agreement between our theory and experimental data in both (In, Mn)As and (Ga, Mn)As systems suggests that this disorder independent contribution to the anomalous Hall conductivity dominates in diluted magnetic semiconductors. The success of this model for (III, Mn)V materials is unprecedented in the longstanding effort to understand origins of the anomalous Hall effect in itinerant ferromagnets.

  10. Towards a new class of heavy ion doped magnetic semiconductors for room temperature applications

    PubMed Central

    Lee, Juwon; Subramaniam, Nagarajan Ganapathi; Agnieszka Kowalik, Iwona; Nisar, Jawad; Lee, Jaechul; Kwon, Younghae; Lee, Jaechoon; Kang, Taewon; Peng, Xiangyang; Arvanitis, Dimitri; Ahuja, Rajeev

    2015-01-01

    The article presents, using Bi doped ZnO, an example of a heavy ion doped oxide semiconductor, highlighting a novel p-symmetry interaction of the electronic states to stabilize ferromagnetism. The study includes both ab initio theory and experiments, which yield clear evidence for above room temperature ferromagnetism. ZnBixO1−x thin films are grown using the pulsed laser deposition technique. The room temperature ferromagnetism finds its origin in the holes introduced by the Bi doping and the p-p coupling between Bi and the host atoms. A sizeable magnetic moment is measured by means of x-ray magnetic circular dichroism at the O K-edge, probing directly the spin polarization of the O(2p) states. This result is in agreement with the theoretical predictions and inductive magnetometry measurements. Ab initio calculations of the electronic and magnetic structure of ZnBixO1−x at various doping levels allow to trace the origin of the ferromagnetic character of this material. It appears, that the spin-orbit energy of the heavy ion Bi stabilizes the ferromagnetic phase. Thus, ZnBixO1−x doped with a heavy non-ferromagnetic element, such as Bi, is a credible example of a candidate material for a new class of compounds for spintronics applications, based on the spin polarization of the p states. PMID:26592564

  11. Magnetic order in a frustrated two-dimensional atom lattice at a semiconductor surface

    NASA Astrophysics Data System (ADS)

    Li, Gang; Höpfner, Philipp; Schäfer, Jörg; Blumenstein, Christian; Meyer, Sebastian; Bostwick, Aaron; Rotenberg, Eli; Claessen, Ralph; Hanke, Werner

    2013-03-01

    Two-dimensional electron systems, as exploited for device applications, can lose their conducting properties because of local Coulomb repulsion, leading to a Mott-insulating state. In triangular geometries, any concomitant antiferromagnetic spin ordering can be prevented by geometric frustration, spurring speculations about ‘melted’ phases, known as spin liquid. Here we show that for a realization of a triangular electron system by epitaxial atom adsorption on a semiconductor, such spin disorder, however, does not appear. Our study compares the electron excitation spectra obtained from theoretical simulations of the correlated electron lattice with data from high-resolution photoemission. We find that an unusual row-wise antiferromagnetic spin alignment occurs that is reflected in the photoemission spectra as characteristic ‘shadow bands’ induced by the spin pattern. The magnetic order in a frustrated lattice of otherwise non-magnetic components emerges from longer-range electron hopping between the atoms. This finding can offer new ways of controlling magnetism on surfaces.

  12. Spontaneous appearance of a low-dimensional magnetic electron system on semiconductor nanostructures

    NASA Astrophysics Data System (ADS)

    Sawada, Keisuke; Iwata, Jun-Ichi; Oshiyama, Atsushi

    2016-06-01

    We report on the large-scale density-functional calculations that show the emergence of the spin-polarized ground states in nanofacets self-organized on SiC (0001) surfaces. We first reveal that the nanofacet formed by bunching of single bilayer steps induces peculiar electron states localized at but extended along step edges, showing the flat-band characteristics. The electron states are of C-dangling-bond characters mixed with the back-bond character of neighboring edge Si atoms. We find that the resulting flat bands lead to the spin polarization near the step edges by H passivation of the terrace Si atoms. Interestingly, either ferromagnetic or antiferromagnetic chains appear along the step edges on the SiC nanofacet and the location of such magnetic chains can be controlled by manipulating the H passivation of atoms near the step edges. These findings open a possibility of the appearance of new magnetic functions on the covalent semiconductor surfaces without magnetic elements.

  13. Structural, magnetic, and transport properties of (Zn,V)Te semiconductors

    NASA Astrophysics Data System (ADS)

    Wang, Weigang; Ni, Chaoying; Zhu, Tao; Zhang, Huiwu; Xiao, John Q.

    2006-04-01

    Vanadium-doped ZnTe has been predicted to be one of the candidates for ferromagnetic semiconductors with a high Curie temperature [K. Sato and H. Katayama-Yoshida, Semicond. Sci. Technol. 17, 367 (2002)]. In this paper, we report the structural, magnetic, and transport properties of (Zn,V)Te films prepared by magnetron sputtering. Samples were fabricated on both GaAs and thermally oxidized silicon substrate at elevated temperature. Oriented sample (100) can be achieved on GaAs substrates and only polycrystalline samples are observed on Si substrates. X-ray diffraction (XRD) and transmission electron spectroscopy (TEM) show no magnetic precipitates in the (Zn,V)Te film. The magnetization measurement shows that the oriented sample is paramagnetic at 5 K, while films on Si substrate shows weak ferromagnetism at 5 K. The sign of magnetoresistance (MR=[R(H)-R(0)]/R(0)) gradually changes from negative to positive with temperature, and positive MR at high temperatures shows H2 dependence, indicating ordinary MR effect. It is believed the observed negative MR corresponds to the ferromagnetic ordering at lower temperature.

  14. Determining Exchange Splitting in a Magnetic Semiconductor by Spin-Filter Tunneling

    NASA Astrophysics Data System (ADS)

    Santos, T. S.; Moodera, J. S.; Raman, K. V.; Negusse, E.; Holroyd, J.; Dvorak, J.; Liberati, M.; Idzerda, Y. U.; Arenholz, E.

    2008-10-01

    A large exchange splitting of the conduction band in ultrathin films of the ferromagnetic semiconductor EuO was determined quantitatively, by using EuO as a tunnel barrier and fitting the current-voltage characteristics and temperature dependence to tunneling theory. This exchange splitting leads to different tunnel barrier heights for spin-up and spin-down electrons and is large enough to produce a near-fully spin-polarized current. Moreover, the magnetic properties of these ultrathin films (<6nm) show a reduction in Curie temperature with decreasing thickness, in agreement with theoretical calculation [R. Schiller , Phys. Rev. Lett. 86, 3847 (2001)PRLTAO0031-900710.1103/PhysRevLett.86.3847].

  15. Electric field control of spin splitting in III-V semiconductor quantum dots without magnetic field

    NASA Astrophysics Data System (ADS)

    Prabhakar, Sanjay; Melnik, Roderick

    2015-10-01

    We provide an alternative means of electric field control for spin manipulation in the absence of magnetic fields by transporting quantum dots adiabatically in the plane of two-dimensional electron gas. We show that the spin splitting energy of moving quantum dots is possible due to the presence of quasi-Hamiltonian that might be implemented to make the next generation spintronic devices of post CMOS technology. Such spin splitting energy is highly dependent on the material properties of semiconductor. It turns out that this energy is in the range of meV and can be further enhanced with increasing pulse frequency. In particular, we show that quantum oscillations in phonon mediated spin-flip behaviors can be observed. We also confirm that no oscillations in spin-flip behaviors can be observed for the pure Rashba or pure Dresselhaus cases.

  16. Terahertz radiation induced chaotic electron transport in semiconductor superlattices with a tilted magnetic field.

    PubMed

    Wang, C; Wang, F; Cao, J C

    2014-09-01

    Chaotic electron transport in semiconductor superlattice induced by terahertz electric field that is superimposed on a dc electric field along the superlattice axis are studied using the semiclassical motion equations including the effect of dissipation. A magnetic field that is tilted relative to the superlattice axis is also applied to the system. Numerical simulation shows that electrons in superlattice miniband exhibit complicate nonlinear oscillating modes with the influence of terahertz radiation. Transitions between frequency-locking and chaos via pattern forming bifurcations are observed with the varying of terahertz amplitude. It is found that the chaotic regions gradually contract as the dissipation increases. We attribute the appearance of complicate nonlinear oscillation in superlattice to the interaction between terahertz radiation and internal cooperative oscillating mode relative to Bloch oscillation and cyclotron oscillation. PMID:25273189

  17. Nonlinear optics response of semiconductor quantum wells under high magnetic fields

    SciTech Connect

    Chemla, D.S.

    1993-07-01

    Recent investigations on the nonlinear optical response of semiconductor quantum wells in a strong perpendicular magnetic field, H, are reviewed. After some introductory material the evolution of the linear optical properties of GaAs QW`s as a function of H is discussed; an examination is made of how the magneto-excitons (MX) extrapolate continuously between quasi-2D QW excitons (X) when H = 0, and pairs of Landau levels (LL) when H {yields} {infinity}. Next, femtosecond time resolved investigations of their nonlinear optical response are presented; the evolution of MX-MX interactions with increasing H is stressed. Finally, how, as the dimensionality is reduced by application of H, the number of scattering channels is limited and relaxation of electron-hole pairs is affected. How nonlinear optical spectroscopy can be exploited to access the relaxation of angular momentum within magneto-excitons is also discussed.

  18. Magnetic ordering in digital alloys of group-IV semiconductors with 3d-transition metals

    SciTech Connect

    Otrokov, M. M.; Tugushev, V. V.; Ernst, A.; Ostanin, S. A.; Kuznetsov, V. M.; Chulkov, E. V.

    2011-04-15

    The ab initio investigation of the magnetic ordering in digital alloys consisting of monolayers of 3d-transition metals Ti, V, Cr, Mn, Fe, Co, and Ni introduced into the Si, Ge, and Si{sub 0.5}Ge{sub 0.5} semiconductor hosts is reported. The calculations of the parameters of the exchange interactions and total-energy calculations indicate that the ferromagnetic order appears only in the manganese monolayers, whereas the antiferromagnetic order is more probable in V, Cr, and Fe monolayers, and Ti, Co, and Ni monolayers are nonmagnetic. The stability of the ferromagnetic phase in digital alloys containing manganese monolayers has been analyzed using the calculations of magnon spectra.

  19. Terahertz radiation induced chaotic electron transport in semiconductor superlattices with a tilted magnetic field

    SciTech Connect

    Wang, C. Wang, F.; Cao, J. C.

    2014-09-01

    Chaotic electron transport in semiconductor superlattice induced by terahertz electric field that is superimposed on a dc electric field along the superlattice axis are studied using the semiclassical motion equations including the effect of dissipation. A magnetic field that is tilted relative to the superlattice axis is also applied to the system. Numerical simulation shows that electrons in superlattice miniband exhibit complicate nonlinear oscillating modes with the influence of terahertz radiation. Transitions between frequency-locking and chaos via pattern forming bifurcations are observed with the varying of terahertz amplitude. It is found that the chaotic regions gradually contract as the dissipation increases. We attribute the appearance of complicate nonlinear oscillation in superlattice to the interaction between terahertz radiation and internal cooperative oscillating mode relative to Bloch oscillation and cyclotron oscillation.

  20. Structural and Magnetic Properties of Dilute Ca²⁺ Doped Iron Oxide Nanoparticles.

    PubMed

    Samar Layek; Rout, K; Mohapatra, M; Anand, S; Verma, H C

    2016-01-01

    Undoped and calcium substituted hematite (α-Fe₂O₃) nanoparticles are synthesized by surfactant-directed co-precipitation and post annealing method. The annealed nanoparticles were found to be in single phase in nature and crystallize in the rhombohedral structure with space group R3c as confirmed by Rietveld refinement of the X-ray diffraction (XRD) data. Average crystallite sizes are calculated to be 20 to 30 nm and 50 to 60 nm for the nanoparticles annealed at 400 and 600 °C respectively. Mössbauer spectra for all the nanoparticles could be fitted with a sextet corresponding to the single magnetic state of the iron atoms in its Fe³⁺ state in the hematite matrix. The FTIR and Raman spectra of all the samples correspond to specific modes of α-Fe₂O₃. UV-Vis spectra of annealed samples showed broad peaks in the range of 525-630 nm resulting from spin-forbidden ligand field transition together with the spin-flip transition among the 2t₂g states. The estimated band gap energies were in the range of 1.6 to 1.9 eV which are much lower than the reported values for nano hematite. From the room temperature magnetic hysteresis loop measurements, weak ferromagnetic behavior is observed in all undoped and Ca²⁺ doped hematite samples. Morin temperature (T(M)) is calculated to be 257 and 237 K for 1.45% doped samples with particle size 54 and 27 nm respectively. The sample with Ca content of 1.45 wt% when annealed at 400 °C showed that the particles were of different shapes which included both quasi spherical and rod shaped. On annealing the same sample at 600 °C, the nanorods collapsed to form bigger spherical and ellipsoidal particles. PMID:27398469

  1. PREFACE: 20th International Conference on the Application of High Magnetic Fields in Semiconductor Physics (HMF-20)

    NASA Astrophysics Data System (ADS)

    Faugeras, Clément; Orlita, Milan; Piot, Benjamin; Potemski, Marek

    2013-08-01

    The 20th International Conference on 'High Magnetic Fields in Semiconductor Physics' (HMF-20) was held on 22-27 July 2012, in Chamonix Mont Blanc, France, as a satellite meeting to the 31st International Conference on the Physics of Semiconductors. HMF-20 followed a series of biennial conferences, initiated by Gottfried Landwehr, in Wurzburg, Germany, in 1972. Primarily focused on 'semiconductors' and 'magnetic fields', the main topics of the conference have evolved with time and are now dominated by current themes related to the physics of low dimensional systems in conjunction with the application of magnetic fields. The list of HMF-20 topics included: quantum Hall effect phenomena, graphene and carbon nanotubes, quantum wells, dots and wires, bulk semiconductors, topological insulators and organic conductors, magneto-transport and magneto-spectroscopy, electron correlations and magnetic field driven phases, spin-dependent phenomena and non-equilibrium effects, as well as novel phenomena and new techniques in high magnetic fields. The HMF-20 conference gathered 200 participants from 23 different countries. It was organized by the Laboratoire National des Champs Magnétiques Intenses, Grenoble, France, and greatly sponsored by the European High Magnetic Field Laboratory under the EC-FP7 framework. The 21st edition of the HMF conference series will take place during the summer of 2014 in Florida, USA. We thank the participants who, through their presentations, convivial discussions, and the papers presented here, contributed to the success of HMF-20 and advancements in the physics related to the applications of high magnetic fields. Clément Faugeras, Milan Orlita, Benjamin Piot and Marek Potemski Laboratoire National des Champs Magnétiques Intenses CNRS/UJF/UPS/INSA, Grenoble France

  2. Measurement at microwave frequencies of the magnetic properties of small quantities of powdered or diluted samples

    NASA Astrophysics Data System (ADS)

    Pura, Jose Luis; Muñoz, José María; Alejos, Óscar; Hernández-Gómez, Pablo; Torres, Carlos

    2015-05-01

    Transmission line techniques are a convenient way to determine the electromagnetic properties of a variety of materials in the ranges of radio and microwave frequencies. Traditional methods based on the measurement of the four scattering parameters can be successfully replaced for the method presented here, in which no change in the geometry is needed, since two independent measurements are carried out, with and without an applied magnetic field. In addition, given the small size of the sample holder, the required amount of material can be drastically reduced, and allow the use of a lumped circuit model, then reducing the inherent difficulties associated with the use of distributed parameters. Even though this kind of model requires the involved wavelengths to be much larger than the size of the system, this requirement can be overcome as long as the tested materials have relative ɛ or μ lower than 100. Furthermore, the use of short-circuited transmission lines simplifies sample holding and systematizes the measurement process, which is an important target when dealing with measurements within the radio and microwave frequency ranges.

  3. Magnetically Suspended Linear Pulse Motor for Semiconductor Wafer Transfer in Vacuum Chamber

    NASA Technical Reports Server (NTRS)

    Moriyama, Shin-Ichi; Hiraki, Naoji; Watanabe, Katsuhide; Kanemitsu, Yoichi

    1996-01-01

    This paper describes a magnetically suspended linear pulse motor for a semiconductor wafer transfer robot in a vacuum chamber. The motor can drive a wafer transfer arm horizontally without mechanical contact. In the construction of the magnetic suspension system, four pairs of linear magnetic bearings for the lift control are used for the guidance control as well. This approach allows us to make the whole motor compact in size and light in weight. The tested motor consists of a double-sided stator and a transfer arm with a width of 50 mm and a total length of 700 mm. The arm, like a ladder in shape, is designed as the floating element with a tooth width of 4 mm (a tooth pitch of 8 mm). The mover mass is limited to about 1.6 kg by adopting such an arm structure, and the ratio of thrust to mover mass reaches to 3.2 N/kg under a broad air gap (1 mm) between the stator teeth and the mover teeth. The performance testing was carried out with a transfer distance less than 450 mm and a transfer speed less than 560 mm/s. The attitude of the arm was well controlled by the linear magnetic bearings with a combined use, and consequently the repeatability on the positioning of the arm reached to about 2 micron. In addition, the positioning accuracy was improved up to about 30 micron through a compensation of the 128-step wave current which was used for the micro-step drive with a step increment of 62.5 micron.

  4. Features of the electric-field distribution in anisotropic semiconductor wafers in a transverse magnetic field

    SciTech Connect

    Filippov, V. V.; Bormontov, E. N.

    2013-07-15

    A macroscopic model of the Hall effects and magnetoresistance in anisotropic semiconductor wafers is developed. The results obtained by solving the electrodynamic boundary problem allow the potential and eddy currents in anisotropic semiconductors to be calculated at different current-contact locations, depending on the parameters of the sample material's anisotropy. The results of this study are of great practical importance for investigating the physical properties of anisotropic semiconductors and simulating the electron-transport phenomena in devices based on anisotropic semiconductors.

  5. Semiconductor Nanostructures in High Magnetic Fields:. Recent Results at Hfml Nijmegen

    NASA Astrophysics Data System (ADS)

    Christianen, Peter C. M.

    A short overview of the current experimental facilities at the HFML Nijmegen, including an update on the planned development of a 45 T Hybrid magnet in conjunction with a Free Electron Laser, was presented. That was followed by a brief highlight of recent results on the high field physical properties of semiconductor nanostructures, such as quantum rings1 and dots,2 graphene3,4 and organic nanostructures.5 The majority of the talk was devoted to the investigation of negatively charged excitons (negative trions, two electrons bound to one hole) in semiconductor quantum wells in high magnetic fields. A comprehensive overview of photoluminescence (PL) experiments on GaAs and CdTe quantum wells (QWs) of variable well widths, containing a low density electron gas (2DEG) was presented. Particular interest was given to the magnetic field range where the ground state of negative trions is changing from a singlet (both electrons having opposite spin) to a triplet (parallel electron spins) state. Using polarized magneto-PL (excitation) and reflectivity spectroscopy we have identified (for both GaAs and CdTe QWs) the four typical excitonic peaks, usually denoted as the singlet, dark triplet and bright triplet trion peaks, as well as the neutral exciton peak. All peaks exhibit a pronounced dependence on polarization, 2DEG density and temperature. CdTe QWs exhibit all four peaks at the entire field range used (< 44 T), whereas the dark triplet emission disappears at high fields for GaAs QWs. We have determined the field strength at which the singlet-triplet crossover occurs for all QWs, which allows us to critically compare our experimental results with theoretical predictions. Remarkably, the actual singlet-triplet transition is hidden in GaAs QWs and a narrow (12 nm) CdTe QW. Since the PL emission energy equals the energy difference between the initial (trion) and final (electron) states, the PL lines themselves do not cross at the singlet-triplet crossover as a result of the

  6. Multifunctional semiconductor micro-Hall devices for magnetic, electric, and photo-detection

    SciTech Connect

    Gilbertson, A. M.; Cohen, L. F.; Sadeghi, Hatef; Lambert, C. J.; Panchal, V.; Kazakova, O.; Solin, S. A.

    2015-12-07

    We report the real-space voltage response of InSb/AlInSb micro-Hall devices to local photo-excitation, electric, and magnetic fields at room temperature using scanning probe microscopy. We show that the ultrafast generation of localised photocarriers results in conductance perturbations analogous to those produced by local electric fields. Experimental results are in good agreement with tight-binding transport calculations in the diffusive regime. The magnetic, photo, and charge sensitivity of a 2 μm wide probe are evaluated at a 10 μA bias current in the Johnson noise limit (valid at measurement frequencies > 10 kHz) to be, respectively, 500 nT/√Hz; 20 pW/√Hz (λ = 635 nm) comparable to commercial photoconductive detectors; and 0.05 e/√Hz comparable to that of single electron transistors. These results demonstrate the remarkably versatile sensing attributes of simple semiconductor micro-Hall devices that can be applied to a host of imaging and sensing applications.

  7. Novel effects of weak magnetic fields on post-implantation damage in semiconductors and superconducting ceramics

    NASA Astrophysics Data System (ADS)

    Khait, Yu. L.

    1996-08-01

    Novel experimentally verifiable and theoretically explained effects of weak static magnetic fields (WSMFs) acting during ion implantation of semiconductors and superconducting ceramics (SCC) at 300 K, moderate ion energies (e.g. 200-400 keV) and low dosage (e.g. 10 11-10 13 m -2) on the post-implantation radiation damage (PIRD) and material parameters are discussed. The WSMF of strength of H ≈ 1 kOe reduces, as previously reported, the PIRD in Hg 08Cd 02Te and InSb by factors of 2 and 1.54, respectively, and can increase the PIRD and change material parameters in SCCs. The WSMF effects on the radiation damage is a generic consequence of the kinetic electron-related theory of atomic rate processes in solids which shows that local electron transitions (LETs) in the nanometer vicinity of hopping atoms (defects) influence exponentially defect formation and migration rates. The magnetic field changing the LET number affects exponentially the rates of formation, migration and agglomeration of point defects and thus change the radiation damage.

  8. Multifunctional semiconductor micro-Hall devices for magnetic, electric, and photo-detection

    NASA Astrophysics Data System (ADS)

    Gilbertson, A. M.; Sadeghi, Hatef; Panchal, V.; Kazakova, O.; Lambert, C. J.; Solin, S. A.; Cohen, L. F.

    2015-12-01

    We report the real-space voltage response of InSb/AlInSb micro-Hall devices to local photo-excitation, electric, and magnetic fields at room temperature using scanning probe microscopy. We show that the ultrafast generation of localised photocarriers results in conductance perturbations analogous to those produced by local electric fields. Experimental results are in good agreement with tight-binding transport calculations in the diffusive regime. The magnetic, photo, and charge sensitivity of a 2 μm wide probe are evaluated at a 10 μA bias current in the Johnson noise limit (valid at measurement frequencies > 10 kHz) to be, respectively, 500 nT/√Hz; 20 pW/√Hz (λ = 635 nm) comparable to commercial photoconductive detectors; and 0.05 e/√Hz comparable to that of single electron transistors. These results demonstrate the remarkably versatile sensing attributes of simple semiconductor micro-Hall devices that can be applied to a host of imaging and sensing applications.

  9. Spin-lattice relaxation via quantum tunneling in diluted crystals of Fe4 single-molecule magnets

    NASA Astrophysics Data System (ADS)

    Repollés, A.; Cornia, A.; Luis, F.

    2014-02-01

    We investigate the dynamic susceptibility of Fe4 single-molecule magnets with integer spin (S =5) in the form of pure crystals as well as diluted in crystals of isostructural, but nonmagnetic, Ga4 clusters. Below approximately 1 K, the spin-lattice relaxation becomes dominated by a temperature-independent process. The spin-lattice relaxation time τ measured in this "quantum regime" is 12 orders of magnitude shorter than the characteristic time scale of direct phonon-induced processes but agrees with the relaxation times of pure (i.e., not assisted by phonons) spin tunneling events. The present results show that the latter phenomenon, despite conserving the energy of the ensemble of electronic and nuclear spins, drives the thermalization of electronic spins at very low temperatures. The spin-lattice relaxation time scales with the concentration of Fe4, thus suggesting that the main effect of dipolar interactions is to block tunneling. The data show therefore no evidence for the contribution of collective phonon emission processes, such as phonon superradiance, to the spin-lattice relaxation.

  10. Measurement of total body water in human infants using deuterium isotope dilution and nuclear magnetic resonance spectroscopy

    SciTech Connect

    Rebouche, C.J.; Pearson, G.A.; Serfass, R.E.; Roth, C.W.; Finley, J.W.

    1986-03-01

    Total body water (TBW) provides a useful measure of fat-free body mass. Deuterium (D) oxide isotope dilution is a useful method to determine TBW. Various techniques, including density, infrared absorption, mass spectrometry and gas chromatography have been employed to determine D enrichment in body fluids. Each of these methods requires extensive sample preparation (sublimation or distillation of the body fluid). The authors have employed nuclear magnetic resonance (NMR) spectroscopy to measure D enrichment in saliva and urine of human infants. No sample preparation was necessary. A standard (dg-t-butanol) was added to 0.5 ml of sample and D enrichment was measured using a JEOL FX-900 NMR spectrometer. Signal acquisition time was 4.7 min. Working range of D enrichment was 0.04-0.32 atom % D (corresponding to an oral dose of approximately 0.25-2.0 g D/sub 2/O/kg body weight). Coefficients of variation (c.v.) for saliva samples at 0.20 and 0.06 atom % enrichment were 1.97% and 4.78%, respectively. Mean (+/-SD) of TBW determinations for 6 infants was 58.5 +/- 5.4% of body weight (range 53-66%). Repeat measurements (3) of TBW for each infant at weekly intervals yielded a mean c.v. of 4.1% (n = 6). This method provides precise measurement of TBW without the extensive sample preparation requirements of previously-described methods.

  11. Effect of P-anion codoping on the Curie temperature of GaMnAs diluted magnetic semiconductors

    NASA Astrophysics Data System (ADS)

    Bouzerar, Richard; Máca, Frantisek; Kudrnovský, Josef; Bergqvist, Lars

    2010-07-01

    Recent measurements of GaMnAs alloy samples with a very small content of P atoms prepared by ion-implanted pulsed laser melting (II-PLM) [Phys. Rev. Lett. 101, 087203 (2008)10.1103/PhysRevLett.101.087203] have shown surprisingly low Curie temperature as compared to undoped samples. An explanation based on a possible metal-insulator transition at constant Mn doping was proposed based on a dramatic increase of the sample resistivity. However, no quantitative calculations supporting such a picture as concerns the Curie temperature were shown. We will present a parameter-free theory of the Curie temperature (TC) which assumes that possible defects due to the II-PLM such as, e.g., space inhomogeneities, vacancies, clustering, and also conventional compensating defects will reduce the sample hole concentration. Their effect was first qualitatively modeled in the framework of the rigid-band model by adjusting the system Fermi level due to the reduction of the carrier concentration which is considered as a parameter of the theory. In addition, the effect of possible conventional compensating defects, such as, e.g., As and P antisites or P and Mn interstitials was also investigated. TC ’s are calculated within the self-consistent local RPA (SCLRPA) and Monte Carlo (MC) simulations. We will demonstrate that a reasonable agreement of calculated and measured TC can be obtained for reduced hole concentrations which are known to exist in GaMnAs samples. As concerns possible specific defects, we have shown that P and Mn interstitials are particularly effective in the reduction of the sample Curie temperature.

  12. Electron - polar acoustical phonon interactions in nitride based diluted magnetic semiconductor quantum well via hot electron magnetotransport

    SciTech Connect

    Pandya, Ankur; Shinde, Satyam; Jha, Prafulla K.

    2015-05-15

    In this paper the hot electron transport properties like carrier energy and momentum scattering rates and electron energy loss rates are calculated via interactions of electrons with polar acoustical phonons for Mn doped BN quantum well in BN nanosheets via piezoelectric scattering and deformation potential mechanisms at low temperatures with high electric field. Electron energy loss rate increases with the electric field. It is observed that at low temperatures and for low electric field the phonon absorption is taking place whereas, for sufficient large electric field, phonon emission takes place. Under the piezoelectric (polar acoustical phonon) scattering mechanism, the carrier scattering rate decreases with the reduction of electric field at low temperatures wherein, the scattering rate variation with electric field is limited by a specific temperature beyond which there is no any impact of electric field on such scattering.

  13. Nanostructure and magnetic properties of the MnZnO system, a room temperature magnetic semiconductor?

    PubMed

    Costa-Krämer, J L; Briones, F; Fernández, J F; Caballero, A C; Villegas, M; Díaz, M; García, M A; Hernando, A

    2005-02-01

    The magnetic properties of the system MnZnO prepared by conventional ceramic procedures using ZnO and MnO(2) starting powders are studied and related to the nanostructure. Thermal treatment at 500 °C produces a ferromagnetic phase, although this temperature is not high enough to promote proper sintering; thus the thermally treated compact shows brittle characteristics of unreacted and poorly densified ceramic samples. Scanning electron microscopy and x-ray analysis reveal the appearance of a new phase, most probably related to the diffusion of Zn into MnO(2) oxide nanocrystals. The magnetic properties deviate considerably from what would be expected of an unreacted mixture of ZnO (diamagnetic) and MnO(2) particles (paramagnetic above 100 K and anti-ferromagnetic below that temperature), exhibiting a ferromagnetic like behaviour from 5 to 300 K and beyond mixed with a paramagnetic component. The ferromagnetic phase seems to be originated by diffusion at the nanoscale of Zn into MnO(2) grains. The Curie temperature of the ferromagnetic phase, once the paramagnetic component has been subtracted from the hysteresis loops, is measured to be 450 K. EPR resonance experiments from 100 to 600 K confirm a ferromagnetic to paramagnetic like transition above room temperature for these materials.

  14. Optically Detected Magnetic Resonance Studies on π-conjugated semiconductor systems

    SciTech Connect

    Chen, Ying

    2011-01-01

    Optically Detected Magnetic Resonance (ODMR) techniques were used to investigate the dynamics of excitons and charge carriers in π-conjugated organic semiconductors. Degradation behavior of the negative spin-1/2 electroluminescence-detected magnetic resonance (ELDMR) was observed in Alq3 devices. The increase in the resonance amplitude implies an increasing bipolaron formation during degradation, which might be the result of growth of charge traps in the device. The same behavior of the negative spin-1/2 ELDMR was observed in 2wt% Rubrene doped Tris(8-hydroxyquinolinato)aluminium (Alq3) devices. However, with increasing injection current, a positive spin-1/2 ELDMR, together with positive spin 1 triplet powder patterns at ΔmS=±1 and ΔmS=±2, emerges. Due to the similarities in the frequency dependences of single and double modulated ELDMR and the photoluminescence-detected magnetic resonance (PLDMR) results in poly[2-methoxy-5-(2 -ethyl-hexyloxy)-1,4-phenyl ene vinylene] (MEH-PPV) films, the mechanism for this positive spin-1/2 ELDMR was assigned to enhanced triplet-polaron quenching under resonance conditions. The ELDMR in rubrene doped Alq3 devices provides a path to investigate charge distribution in the device under operational conditions. Combining the results of several devices with different carrier blocking properties and the results from transient EL, it was concluded trions not only exist near buffer layer but also exist in the electron transport layer. This TPQ model can also be used to explain the positive spin-1/2 PLDMR in poly(3-hexylthiophene) (P3HT) films at low temperature and in MEH-PPV films at various temperatures up to room temperature. Through quantitative analysis, TE-polaron quenching (TPQ) model is shown having the ability to explain most behaviors of the positive spin-1/2 resonance. Photocurrent detected magnetic resonance (PCDMR) studies on MEH-PPV devices revealed a novel transient resonance signal. The signal

  15. Magnetic ground state of an individual Fe2+ ion in strained semiconductor nanostructure

    PubMed Central

    Smoleński, T.; Kazimierczuk, T.; Kobak, J.; Goryca, M.; Golnik, A.; Kossacki, P.; Pacuski, W.

    2016-01-01

    Single impurities with nonzero spin and multiple ground states offer a degree of freedom that can be utilized to store the quantum information. However, Fe2+ dopant is known for having a single nondegenerate ground state in the bulk host semiconductors and thus is of little use for spintronic applications. Here we show that the well-established picture of Fe2+ spin configuration can be modified by subjecting the Fe2+ ion to high strain, for example, produced by lattice mismatched epitaxial nanostructures. Our analysis reveals that high strain induces qualitative change in the ion energy spectrum and results in nearly doubly degenerate ground state with spin projection Sz=±2. We provide an experimental proof of this concept using a new system: a strained epitaxial quantum dot containing individual Fe2+ ion. Magnetic character of the Fe2+ ground state in a CdSe/ZnSe dot is revealed in photoluminescence experiments by exploiting a coupling between a confined exciton and the single-iron impurity. We also demonstrate that the Fe2+ spin can be oriented by spin-polarized excitons, which opens a possibility of using it as an optically controllable two-level system free of nuclear spin fluctuations. PMID:26818580

  16. High temperature magnetic order in Zn1-x Mn x SnSb2+MnSb nanocomposite ferromagnetic semiconductors

    NASA Astrophysics Data System (ADS)

    Kilanski, L.; Górska, M.; Ślawska-Waniewska, A.; Lewińska, S.; Szymczak, R.; Dynowska, E.; Podgórni, A.; Dobrowolski, W.; Ralević, U.; Gajić, R.; Romčević, N.; Fedorchenko, I. V.; Marenkin, S. F.

    2016-08-01

    We present studies of structural, magnetic, and electrical properties of Zn1-x Mn x SnSb2+MnSb nanocomposite ferromagnetic semiconductors with the average Mn-content, \\bar{x} , changing from 0.027 up to 0.138. The magnetic force microscope imaging done at room temperature shows the presence of a strong signal coming from MnSb clusters. Magnetic properties show the paramagnet-ferromagnet transition with the Curie temperature, T C, equal to about 522 K and the cluster-glass behavior with the transition temperature, T CG, equal to about 465 K, both related to MnSb clusters. The magnetotransport studies show that all investigated samples are p-type semiconductors with high hole concentration, p, changing from 1021 to 1022 cm-3. A large increase in the resistivity as a function of the magnetic field is observed at T  <  10 K and small magnetic fields, |B|<100 mT, for all the studied samples with a maximum amplitude of the magnetoresistance about 460% at T  =  1.4 K. The large increase in the resistivity is most probably caused by the appearance of the superconducting state in the samples at T  <  4.3 K.

  17. Simultaneous monitoring of singlet and triplet exciton variations in solid organic semiconductors driven by an external static magnetic field

    SciTech Connect

    Ding, Baofu Alameh, Kamal

    2014-07-07

    The research field of organic spintronics has remarkably and rapidly become a promising research area for delivering a range of high-performance devices, such as magnetic-field sensors, spin valves, and magnetically modulated organic light emitting devices (OLEDs). Plenty of microscopic physical and chemical models based on exciton or charge interactions have been proposed to explain organic magneto-optoelectronic phenomena. However, the simultaneous observation of singlet- and triplet-exciton variations in an external magnetic field is still unfeasible, preventing a thorough theoretical description of the spin dynamics in organic semiconductors. Here, we show that we can simultaneously observe variations of singlet excitons and triplet excitons in an external magnetic field, by designing an OLED structure employing a singlet-exciton filtering and detection layer in conjunction with a separate triplet-exciton detection layer. This OLED structure enables the observation of a Lorentzian and a non-Lorentzian line-shape magnetoresponse for singlet excitons and triplet excitons, respectively.

  18. Interfacial Properties of Organic Semiconductor-Inorganic Magnetic Oxide Hybrid Spintronic Systems Fabricated Using Pulsed Laser Deposition.

    PubMed

    Majumdar, Sayani; Grochowska, Katarzyna; Sawczak, Miroslaw; Śliwiński, Gerard; Huhtinen, Hannu; Dahl, Johnny; Tuominen, Marjukka; Laukkanen, Pekka; Majumdar, Himadri S

    2015-10-14

    We report fabrication of a hybrid organic semiconductor-inorganic complex oxide interface of rubrene and La0.67Sr0.33MnO3 (LSMO) for spintronic devices using pulsed laser deposition (PLD) and investigate the interface structure and chemical bonding-dependent magnetic properties. Our results demonstrate that with proper control of growth parameters, thin films of organic semiconductor rubrene can be deposited without any damage to the molecular structure. Rubrene, a widely used organic semiconductor with high charge-carrier mobility and spin diffusion length, when grown as thin films on amorphous and crystalline substrates such as SiO2-glass, indium-tin oxide (ITO), and LSMO by PLD at room temperature and a laser fluence of 0.19 J/cm2, reveals amorphous structure. The Raman spectra verify the signatures of both Ag and Bg Raman active modes of rubrene molecules. X-ray reflectivity measurements indicate a well-defined interface formation between surface-treated LSMO and rubrene, whereas X-ray photoelectron spectra indicate the signature of hybridization of the electronic states at this interface. Magnetic measurements show that the ferromagnetic property of the rubrene-LSMO interface improves by >230% compared to the pristine LSMO surface due to this proposed hybridization. Intentional disruption of the direct contact between LSMO and rubrene by insertion of a dielectric AlOx layer results in an observably decreased ferromagnetism. These experimental results demonstrate that by controlling the interface formation between organic semiconductor and half-metallic oxide thin films, it is possible to engineer the interface spin polarization properties. Results also confirm that by using PLD for consecutive growth of different layers, contamination-free interfaces can be obtained, and this finding is significant for the well-controlled and reproducible design of spin-polarized interfaces for future hybrid spintronics devices.

  19. Interfacial Properties of Organic Semiconductor-Inorganic Magnetic Oxide Hybrid Spintronic Systems Fabricated Using Pulsed Laser Deposition.

    PubMed

    Majumdar, Sayani; Grochowska, Katarzyna; Sawczak, Miroslaw; Śliwiński, Gerard; Huhtinen, Hannu; Dahl, Johnny; Tuominen, Marjukka; Laukkanen, Pekka; Majumdar, Himadri S

    2015-10-14

    We report fabrication of a hybrid organic semiconductor-inorganic complex oxide interface of rubrene and La0.67Sr0.33MnO3 (LSMO) for spintronic devices using pulsed laser deposition (PLD) and investigate the interface structure and chemical bonding-dependent magnetic properties. Our results demonstrate that with proper control of growth parameters, thin films of organic semiconductor rubrene can be deposited without any damage to the molecular structure. Rubrene, a widely used organic semiconductor with high charge-carrier mobility and spin diffusion length, when grown as thin films on amorphous and crystalline substrates such as SiO2-glass, indium-tin oxide (ITO), and LSMO by PLD at room temperature and a laser fluence of 0.19 J/cm2, reveals amorphous structure. The Raman spectra verify the signatures of both Ag and Bg Raman active modes of rubrene molecules. X-ray reflectivity measurements indicate a well-defined interface formation between surface-treated LSMO and rubrene, whereas X-ray photoelectron spectra indicate the signature of hybridization of the electronic states at this interface. Magnetic measurements show that the ferromagnetic property of the rubrene-LSMO interface improves by >230% compared to the pristine LSMO surface due to this proposed hybridization. Intentional disruption of the direct contact between LSMO and rubrene by insertion of a dielectric AlOx layer results in an observably decreased ferromagnetism. These experimental results demonstrate that by controlling the interface formation between organic semiconductor and half-metallic oxide thin films, it is possible to engineer the interface spin polarization properties. Results also confirm that by using PLD for consecutive growth of different layers, contamination-free interfaces can be obtained, and this finding is significant for the well-controlled and reproducible design of spin-polarized interfaces for future hybrid spintronics devices. PMID:26402298

  20. Anomalous D'yakonov-Perel' spin relaxation in semiconductor quantum wells under a strong magnetic field in the Voigt configuration

    NASA Astrophysics Data System (ADS)

    Zhou, Y.; Yu, T.; Wu, M. W.

    2013-06-01

    We report an anomalous scaling of the D’yakonov-Perel’ spin relaxation with the momentum relaxation in semiconductor quantum wells under a strong magnetic field in the Voigt configuration. We focus on the case in which the external magnetic field is perpendicular to the spin-orbit-coupling-induced effective magnetic field and its magnitude is much larger than the latter one. It is found that the longitudinal spin relaxation time is proportional to the momentum relaxation time even in the strong-scattering limit, indicating that the D’yakonov-Perel’ spin relaxation demonstrates Elliott-Yafet-like behavior. Moreover, the transverse spin relaxation time is proportional (inversely proportional) to the momentum relaxation time in the strong- (weak-) scattering limit, both in the opposite trends against the well-established conventional D’yakonov-Perel’ spin relaxation behaviors. We further demonstrate that all the above anomalous scaling relations come from the unique form of the effective inhomogeneous broadening.

  1. Berry phase mechanism of the anomalous Hall effect in a disordered two-dimensional magnetic semiconductor structure

    PubMed Central

    Oveshnikov, L. N.; Kulbachinskii, V. A.; Davydov, A. B.; Aronzon, B. A.; Rozhansky, I. V.; Averkiev, N. S.; Kugel, K. I.; Tripathi, V.

    2015-01-01

    The anomalous Hall effect (AHE) arises from the interplay of spin-orbit interactions and ferromagnetic order and is a potentially useful probe of electron spin polarization, especially in nanoscale systems where direct measurement is not feasible. While AHE is rather well-understood in metallic ferromagnets, much less is known about the relevance of different physical mechanisms governing AHE in insulators. As ferromagnetic insulators, but not metals, lend themselves to gate-control of electron spin polarization, understanding AHE in the insulating state is valuable from the point of view of spintronic applications. Among the mechanisms proposed in the literature for AHE in insulators, the one related to a geometric (Berry) phase effect has been elusive in past studies. The recent discovery of quantized AHE in magnetically doped topological insulators - essentially a Berry phase effect - provides strong additional motivation to undertake more careful search for geometric phase effects in AHE in the magnetic semiconductors. Here we report our experiments on the temperature and magnetic field dependences of AHE in insulating, strongly-disordered two-dimensional Mn delta-doped semiconductor heterostructures in the hopping regime. In particular, it is shown that at sufficiently low temperatures, the mechanism of AHE related to the Berry phase is favoured. PMID:26596472

  2. Berry phase mechanism of the anomalous Hall effect in a disordered two-dimensional magnetic semiconductor structure.

    SciTech Connect

    Oveshnikov, L. N.; Kulbachinskii, V. A.; Davydov, A. B.; Aronzon, B. A.; Rozhansky, I. V.; Averkiev, N. S.; Kugel, K. I.; Tripathi, V.

    2015-11-24

    In this study, the anomalous Hall effect (AHE) arises from the interplay of spin-orbit interactions and ferromagnetic order and is a potentially useful probe of electron spin polarization, especially in nanoscale systems where direct measurement is not feasible. While AHE is rather well-understood in metallic ferromagnets, much less is known about the relevance of different physical mechanisms governing AHE in insulators. As ferromagnetic insulators, but not metals, lend themselves to gatecontrol of electron spin polarization, understanding AHE in the insulating state is valuable from the point of view of spintronic applications. Among the mechanisms proposed in the literature for AHE in insulators, the one related to a geometric (Berry) phase effect has been elusive in past studies. The recent discovery of quantized AHE in magnetically doped topological insulators - essentially a Berry phase effect - provides strong additional motivation to undertake more careful search for geometric phase effects in AHE in the magnetic semiconductors. Here we report our experiments on the temperature and magnetic field dependences of AHE in insulating, strongly-disordered two-dimensional Mn delta-doped semiconductor heterostructures in the hopping regime. In particular, it is shown that at sufficiently low temperatures, the mechanism of AHE related to the Berry phase is favoured.

  3. Berry phase mechanism of the anomalous Hall effect in a disordered two-dimensional magnetic semiconductor structure.

    DOE PAGES

    Oveshnikov, L. N.; Kulbachinskii, V. A.; Davydov, A. B.; Aronzon, B. A.; Rozhansky, I. V.; Averkiev, N. S.; Kugel, K. I.; Tripathi, V.

    2015-11-24

    In this study, the anomalous Hall effect (AHE) arises from the interplay of spin-orbit interactions and ferromagnetic order and is a potentially useful probe of electron spin polarization, especially in nanoscale systems where direct measurement is not feasible. While AHE is rather well-understood in metallic ferromagnets, much less is known about the relevance of different physical mechanisms governing AHE in insulators. As ferromagnetic insulators, but not metals, lend themselves to gatecontrol of electron spin polarization, understanding AHE in the insulating state is valuable from the point of view of spintronic applications. Among the mechanisms proposed in the literature for AHEmore » in insulators, the one related to a geometric (Berry) phase effect has been elusive in past studies. The recent discovery of quantized AHE in magnetically doped topological insulators - essentially a Berry phase effect - provides strong additional motivation to undertake more careful search for geometric phase effects in AHE in the magnetic semiconductors. Here we report our experiments on the temperature and magnetic field dependences of AHE in insulating, strongly-disordered two-dimensional Mn delta-doped semiconductor heterostructures in the hopping regime. In particular, it is shown that at sufficiently low temperatures, the mechanism of AHE related to the Berry phase is favoured.« less

  4. Berry phase mechanism of the anomalous Hall effect in a disordered two-dimensional magnetic semiconductor structure.

    PubMed

    Oveshnikov, L N; Kulbachinskii, V A; Davydov, A B; Aronzon, B A; Rozhansky, I V; Averkiev, N S; Kugel, K I; Tripathi, V

    2015-01-01

    The anomalous Hall effect (AHE) arises from the interplay of spin-orbit interactions and ferromagnetic order and is a potentially useful probe of electron spin polarization, especially in nanoscale systems where direct measurement is not feasible. While AHE is rather well-understood in metallic ferromagnets, much less is known about the relevance of different physical mechanisms governing AHE in insulators. As ferromagnetic insulators, but not metals, lend themselves to gate-control of electron spin polarization, understanding AHE in the insulating state is valuable from the point of view of spintronic applications. Among the mechanisms proposed in the literature for AHE in insulators, the one related to a geometric (Berry) phase effect has been elusive in past studies. The recent discovery of quantized AHE in magnetically doped topological insulators - essentially a Berry phase effect - provides strong additional motivation to undertake more careful search for geometric phase effects in AHE in the magnetic semiconductors. Here we report our experiments on the temperature and magnetic field dependences of AHE in insulating, strongly-disordered two-dimensional Mn delta-doped semiconductor heterostructures in the hopping regime. In particular, it is shown that at sufficiently low temperatures, the mechanism of AHE related to the Berry phase is favoured. PMID:26596472

  5. Optical and Magnetic Resonance Studies of Defects in Iii-V Compound Semiconductors.

    NASA Astrophysics Data System (ADS)

    Sun, Honjiang

    This dissertation describes experimental studies of the basic properties of impurities and defects in III -V compound semiconductors, using a variety of optical and magnetic resonance techniques. The materials used include InP, GaP, and the Al-GaAs alloy. The methods of investigation include absorption, PL, laser spectroscopy, polarization, electron-irradiation, MCD, ODMR, and ODENDOR. The ODENDOR technique is used to investigate a phosphorus antisite-related defect in as-grown p-type GaP. The defect has been previously identified as arising from an excited S = 1 state via luminescence at ~ 1.1eV. It is established that the observed ODENDOR transitions arise from the M_{s} = 0 state, causing unusual magnetic field and orientation effects. Analysis to high-order perturbation theory and/or matrix diagonalization is required. Hyperfine interactions with the central P and several shells of both P and Ga neighbors are observed confirming that the defect has a P_{Ga}-Y_ {p} structure and that the electronic wave function is highly localized. Two antisite structures in InP have been observed and identified using ODENDOR investigation. One of these is the isolated P_{In} antisite previously studied in as-grown and electron-irradiated p-type InP. Another is the perturbed one observed only in electron-irradiated InP. The energy position of the P_sp{In}{+}/P_sp {In}{++}<=vel of the isolated antisite is estimated to be E_{V} + 1.1 +/- 0.05 eV and that of the P_sp{In}{0}/P _sp{In}{+}<=vel is estimated to be E_{V} + 1.39 +/- 0.01 eV. The dependence of the ODENDOR signals of the perturbed antisite on irradiation dose, detection wavelength, and illumination suggests that at least two slightly different such defects are present after the electron irradiation. Our results indicate that the defects are produced by the electron irradiation and are not initially present in the as-grown materials. In as-grown n-type InP:Sn, a broad (Delta B = 360G), structureless, and isotropic g = 1

  6. Proposal of a general scheme to obtain room-temperature spin polarization in asymmetric antiferromagnetic semiconductors

    NASA Astrophysics Data System (ADS)

    Li, Xingxing; Wu, Xiaojun; Li, Zhenyu; Yang, Jinlong

    2015-09-01

    Exploring magnetic semiconductors is one of the most important questions for spintronic applications. Although various solutions, such as dilute magnetic semiconductors, have been proposed, a practical spintronic device working at room temperature has not been realized. The key to address this issue is to find magnetic materials with both room-temperature magnetic ordering and large spin polarization around the Fermi energy level. Here, we predict a new concept of asymmetric antiferromagnetic (AFM) semiconductors (AAFMSs) with both features. The high temperature magnetic ordering originates from the AFM coupling between different transition metal ions with strong super-exchange interaction, whereas the large spin polarization around the Fermi energy level owes to d orbital mismatch among these ions. Through first-principles calculations, a family of double perovskites A2Cr M O6 (A =Ca ,Sr ,Ba , and M =Ru ,Os ) are predicted to be AAFMSs. This paper provides a way for developing spintronic devices working at room temperature.

  7. Suppression of spin transport in ferromagnet/oxide/semiconductor junctions by magnetic impurities in the tunnel barrier

    NASA Astrophysics Data System (ADS)

    Spiesser, Aurélie; Saito, Hidekazu; Yuasa, Shinji; Jansen, Ron

    2016-10-01

    We have studied how the insertion of sub-monolayer amounts of Mn impurities in the middle of the oxide tunnel barrier of Fe/GeO2 on p-type Ge affects the spin transport, using three-terminal Hanle measurements. Strikingly, the magnitude of the Hanle spin voltage is strongly reduced by increasing the amount of Mn dopants and is even completely absent for devices having an amount of Mn impurities equivalent to a 0.2-nm-thick layer. This demonstrates that magnetic impurities in the tunnel barrier are detrimental to the spin transport in ferromagnet/oxide/semiconductor junctions, and that the localized states associated with such magnetic impurities do not produce three-terminal Hanle spin signals.

  8. Investigation at the atomic scale of the Co spatial distribution in Zn(Co)O magnetic semiconductor oxide

    SciTech Connect

    Larde, R.; Talbot, E.; Vurpillot, F.; Pareige, P.; Schmerber, G.; Beaurepaire, E.; Dinia, A.; Pierron-Bohnes, V.

    2009-06-15

    A sputtered Zn{sub 0.95}Co{sub 0.05}O layer was chemically analyzed at the atomic scale in order to provide an accurate image of the distribution of Co atoms in the ZnO matrix. The investigation of the magnetic properties shows that the as-deposited Zn{sub 0.95}Co{sub 0.05}O is ferromagnetic at room temperature. Atom probe tomography reveals a homogeneous distribution of all chemical species in the layer and the absence of any Co clustering. This result proves that the ferromagnetic properties of this magnetic semiconductor cannot be attributed to a secondary phase or to metallic Co precipitates within the layer.

  9. Spin dynamics in p-doped semiconductor nanostructures subject to a magnetic field tilted from the Voigt geometry

    NASA Astrophysics Data System (ADS)

    Korzekwa, K.; Gradl, C.; Kugler, M.; Furthmeier, S.; Griesbeck, M.; Hirmer, M.; Schuh, D.; Wegscheider, W.; Kuhn, T.; Schüller, C.; Korn, T.; Machnikowski, P.

    2013-10-01

    We develop a theoretical description of the spin dynamics of resident holes in a p-doped semiconductor quantum well (QW) subject to a magnetic field slightly tilted from the Voigt geometry. We find the expressions for the signals measured in time-resolved Faraday rotation (TRFR) and resonant spin amplification (RSA) experiments and study their behavior for a range of system parameters. We find that an inversion of the RSA peaks can occur for long hole spin dephasing times and tilted magnetic fields. We verify the validity of our theoretical findings by performing a series of TRFR and RSA experiments on a p-modulation doped GaAs/Al0.3Ga0.7As single QW and showing that our model can reproduce experimentally observed signals.

  10. High accuracy NMR chemical shift corrected for bulk magnetization as a tool for structural elucidation of dilutable microemulsions. Part 1 - Proof of concept.

    PubMed

    Hoffman, Roy E; Darmon, Eliezer; Aserin, Abraham; Garti, Nissim

    2016-02-01

    In microemulsions, changes in droplet size and shape and possible transformations occur under various conditions. They are difficult to characterize by most analytical tools because of their nano-sized structure and dynamic nature. Several methods are usually combined to obtain reliable information, guiding the scientist in understanding their physical behavior. We felt that there is a need for a technique that complements those in use today in order to provide more information on the microemulsion behavior, mainly as a function of dilution with water. The improvement of NMR chemical shift measurements independent of bulk magnetization effects makes it possible to study the very weak intermolecular chemical shift effects. In the present study, we used NMR high resolution magic angle spinning to measure the chemical shift very accurately, free of bulk magnetization effects. The chemical shift of microemulsion components is measured as a function of the water content in order to validate the method in an interesting and promising, U-type dilutable microemulsion, which had been previously studied by a variety of techniques. Phase transition points of the microemulsion (O/W, bicontinuous, W/O) and changes in droplet shape were successfully detected using high-accuracy chemical shift measurements. We analyzed the results and found them to be compatible with the previous studies, paving the way for high-accuracy chemical shifts to be used for the study of other microemulsion systems. We detected two transition points along the water dilution line of the concentrate (reverse micelles) corresponding to the transition from swollen W/O nano-droplets to bicontinuous to the O/W droplets along with the changes in the droplets' sizes and shapes. The method seems to be in excellent agreement with other previously studied techniques and shows the advantage of this easy and valid technique.

  11. Néel-type skyrmion lattice with confined orientation in the polar magnetic semiconductor GaV4S8

    NASA Astrophysics Data System (ADS)

    Kézsmárki, I.; Bordács, S.; Milde, P.; Neuber, E.; Eng, L. M.; White, J. S.; Rønnow, H. M.; Dewhurst, C. D.; Mochizuki, M.; Yanai, K.; Nakamura, H.; Ehlers, D.; Tsurkan, V.; Loidl, A.

    2015-11-01

    Following the early prediction of the skyrmion lattice (SkL)--a periodic array of spin vortices--it has been observed recently in various magnetic crystals mostly with chiral structure. Although non-chiral but polar crystals with Cnv symmetry were identified as ideal SkL hosts in pioneering theoretical studies, this archetype of SkL has remained experimentally unexplored. Here, we report the discovery of a SkL in the polar magnetic semiconductor GaV4S8 with rhombohedral (C3v) symmetry and easy axis anisotropy. The SkL exists over an unusually broad temperature range compared with other bulk crystals and the orientation of the vortices is not controlled by the external magnetic field, but instead confined to the magnetic easy axis. Supporting theory attributes these unique features to a new Néel-type of SkL describable as a superposition of spin cycloids in contrast to the Bloch-type SkL in chiral magnets described in terms of spin helices.

  12. Magnetic domain structure study of a ferromagnetic semiconductor using a home-made low temperature scanning Hall probe microscope

    NASA Astrophysics Data System (ADS)

    Kweon, Seongsoo; de Lozanne, Alex; Samarth, Nitin

    2008-03-01

    GaMnAs is a ferromagnetic semiconductor actively studied for basic research and for the possibility of application to spintronic devices. To study the local magnetic properties of this material the magnetic force microscope (MFM) is too invasive (by affecting the domains in the sample) or not sensitive enough (due to the weak magnetization of the GaMnAs). We have therefore built a scanning Hall probe microscope (SHPM) to complement our MFM studies. We use a lock-in amplifier to supply a bias current of 1-10μA and to measure the Hall voltage. We calibrated this home-made SHPM with a computer hard disk sample. Comparing images of this sample obtained with MFM and SHPM we show that our home-made SHPM is operating well. We observed the domain structure of 30-nm thick Ga0.94Mn0.06As epilayer grown on a 700nm-thick In0.13Ga0.87As buffer covering a GaAs substrate. We will study the magnetic domain structure as a function of temperature with varying external magnetic fields.

  13. Newtype single-layer magnetic semiconductor in transition-metal dichalcogenides VX2 (X = S, Se and Te)

    PubMed Central

    Fuh, Huei-Ru; Chang, Ching-Ray; Wang, Yin-Kuo; Evans, Richard F. L.; Chantrell, Roy W.; Jeng, Horng-Tay

    2016-01-01

    We present a newtype 2-dimensional (2D) magnetic semiconductor based on transition-metal dichalcogenides VX2 (X = S, Se and Te) via first-principles calculations. The obtained indirect band gaps of monolayer VS2, VSe2, and VTe2 given from the generalized gradient approximation (GGA) are respectively 0.05, 0.22, and 0.20 eV, all with integer magnetic moments of 1.0 μB. The GGA plus on-site Coulomb interaction U (GGA + U) enhances the exchange splittings and raises the energy gap up to 0.38~0.65 eV. By adopting the GW approximation, we obtain converged G0W0 gaps of 1.3, 1.2, and 0.7 eV for VS2, VSe2, and VTe2 monolayers, respectively. They agree very well with our calculated HSE gaps of 1.1, 1.2, and 0.6 eV, respectively. The gap sizes as well as the metal-insulator transitions are tunable by applying the in-plane strain and/or changing the number of stacking layers. The Monte Carlo simulations illustrate very high Curie-temperatures of 292, 472, and 553 K for VS2, VSe2, and VTe2 monolayers, respectively. They are nearly or well beyond the room temperature. Combining the semiconducting energy gap, the 100% spin polarized valence and conduction bands, the room temperature TC, and the in-plane magnetic anisotropy together in a single layer VX2, this newtype 2D magnetic semiconductor shows great potential in future spintronics. PMID:27601195

  14. Newtype single-layer magnetic semiconductor in transition-metal dichalcogenides VX2 (X = S, Se and Te)

    NASA Astrophysics Data System (ADS)

    Fuh, Huei-Ru; Chang, Ching-Ray; Wang, Yin-Kuo; Evans, Richard F. L.; Chantrell, Roy W.; Jeng, Horng-Tay

    2016-09-01

    We present a newtype 2-dimensional (2D) magnetic semiconductor based on transition-metal dichalcogenides VX2 (X = S, Se and Te) via first-principles calculations. The obtained indirect band gaps of monolayer VS2, VSe2, and VTe2 given from the generalized gradient approximation (GGA) are respectively 0.05, 0.22, and 0.20 eV, all with integer magnetic moments of 1.0 μB. The GGA plus on-site Coulomb interaction U (GGA + U) enhances the exchange splittings and raises the energy gap up to 0.38~0.65 eV. By adopting the GW approximation, we obtain converged G0W0 gaps of 1.3, 1.2, and 0.7 eV for VS2, VSe2, and VTe2 monolayers, respectively. They agree very well with our calculated HSE gaps of 1.1, 1.2, and 0.6 eV, respectively. The gap sizes as well as the metal-insulator transitions are tunable by applying the in-plane strain and/or changing the number of stacking layers. The Monte Carlo simulations illustrate very high Curie-temperatures of 292, 472, and 553 K for VS2, VSe2, and VTe2 monolayers, respectively. They are nearly or well beyond the room temperature. Combining the semiconducting energy gap, the 100% spin polarized valence and conduction bands, the room temperature TC, and the in-plane magnetic anisotropy together in a single layer VX2, this newtype 2D magnetic semiconductor shows great potential in future spintronics.

  15. Newtype single-layer magnetic semiconductor in transition-metal dichalcogenides VX2 (X = S, Se and Te).

    PubMed

    Fuh, Huei-Ru; Chang, Ching-Ray; Wang, Yin-Kuo; Evans, Richard F L; Chantrell, Roy W; Jeng, Horng-Tay

    2016-01-01

    We present a newtype 2-dimensional (2D) magnetic semiconductor based on transition-metal dichalcogenides VX2 (X = S, Se and Te) via first-principles calculations. The obtained indirect band gaps of monolayer VS2, VSe2, and VTe2 given from the generalized gradient approximation (GGA) are respectively 0.05, 0.22, and 0.20 eV, all with integer magnetic moments of 1.0 μB. The GGA plus on-site Coulomb interaction U (GGA + U) enhances the exchange splittings and raises the energy gap up to 0.38~0.65 eV. By adopting the GW approximation, we obtain converged G0W0 gaps of 1.3, 1.2, and 0.7 eV for VS2, VSe2, and VTe2 monolayers, respectively. They agree very well with our calculated HSE gaps of 1.1, 1.2, and 0.6 eV, respectively. The gap sizes as well as the metal-insulator transitions are tunable by applying the in-plane strain and/or changing the number of stacking layers. The Monte Carlo simulations illustrate very high Curie-temperatures of 292, 472, and 553 K for VS2, VSe2, and VTe2 monolayers, respectively. They are nearly or well beyond the room temperature. Combining the semiconducting energy gap, the 100% spin polarized valence and conduction bands, the room temperature TC, and the in-plane magnetic anisotropy together in a single layer VX2, this newtype 2D magnetic semiconductor shows great potential in future spintronics. PMID:27601195

  16. Ferromagnets based on diamond-like semiconductors GaSb, InSb, Ge, and Si supersaturated with manganese or iron impurities during laser-plasma deposition

    SciTech Connect

    Demidov, E. S. Podol'skii, V. V.; Lesnikov, V. P.; Sapozhnikov, M. V.; Druzhnov, D. M.; Gusev, S. N.; Gribkov, B. A.; Filatov, D. O.; Stepanova, Yu. S.; Levchuk, S. A.

    2008-01-15

    Properties of thin (30-100 nm) layers of diluted magnetic semiconductors based on diamond-like compounds III-V (InSb and GaSb) and elemental semiconductors Ge and Si doped with 3d impurities of manganese and iron up to 15% were measured and discussed. The layers were grown by laser-plasma deposition onto heated single-crystal gallium arsenide or sapphire substrates. The ferromagnetism of layers with the Curie temperature up to 500 K appeared in observations of the ferromagnetic resonance, anomalous Hall effect, and magneto-optic Kerr effect. The carrier mobility of diluted magnetic semiconductors is a hundred times larger than that of the previously known highest temperature magnetic semiconductors, i.e., copper and chromium chalcogenides. The difference between changes in the magnetization with temperature in diluted semiconductors based on III-V, Ge, and Si was discussed. A complex structure of the ferromagnetic resonance spectrum in Si:Mn/GaAs was observed. The results of magnetic-force microscopy showed a weak correlation between the surface relief and magnetic inhomogeneity, which suggests that the ferromagnetism is caused by the 3d-impurity solid solution, rather than ferromagnetic phase inclusions.

  17. Dilution Confusion: Conventions for Defining a Dilution

    ERIC Educational Resources Information Center

    Fishel, Laurence A.

    2010-01-01

    Two conventions for preparing dilutions are used in clinical laboratories. The first convention defines an "a:b" dilution as "a" volumes of solution A plus "b" volumes of solution B. The second convention defines an "a:b" dilution as "a" volumes of solution A diluted into a final volume of "b". Use of the incorrect dilution convention could affect…

  18. Magnetic disorder in diluted FexM100-x granular thin films (M=Au, Ag, Cu; x < 10 at.%).

    PubMed

    Alba Venero, D; Fernández Barquín, L; Alonso, J; Fdez-Gubieda, M L; Rodríguez Fernández, L; Boada, R; Chaboy, J

    2013-07-10

    Nanogranular thin films of Fe7Au93, Fe7Ag93 and Fe9Cu91 have been sputtered onto Si(100) substrates with the aim of studying the magnetic interactions. X-ray diffraction shows a major noble metal matrix with broad peaks stemming from (111) textured fcc-Au, Ag and Cu. The noble metal forms a nanogranular environment, as confirmed by transmission electron microscopy, with mean particle sizes below 10 nm. The high magnetoresistance (>6%) reveals the existence of Fe nanoparticles. X-ray absorption near edge spectroscopy confirms the presence of a bcc-Fe atom arrangement and some dissolved Fe atoms in the matrix, and XMCD shows the polarization of Au by the Fe nanoparticles. DC-magnetization displays a field-dependent irreversibility produced by the freezing of magnetic nanoparticles into a superspin-glass state. The hysteresis loops remain unsaturated at 5 K and 45 kOe. The coercivity displays a sharp temperature decrease towards a minimum below 50 K, levelling off at higher values, reaching Hc = 200 Oe at 300 K. Annealing of FeAu results in a double-peak zero field cooled magnetization and a slight decrease of the coercivity. The interpretation of the results supports the presence of Fe nanoparticles embedded in the major noble matrix, with some diluted Fe atoms/clusters. PMID:23765439

  19. Heat-Treatment-Induced Switching of Magnetic States in the Doped Polar Semiconductor Ge1‑xMnxTe

    NASA Astrophysics Data System (ADS)

    Kriener, M.; Nakajima, T.; Kaneko, Y.; Kikkawa, A.; Yu, X. Z.; Endo, N.; Kato, K.; Takata, M.; Arima, T.; Tokura, Y.; Taguchi, Y.

    2016-05-01

    Cross-control of a material property - manipulation of a physical quantity (e.g., magnetisation) by a nonconjugate field (e.g., electrical field) – is a challenge in fundamental science and also important for technological device applications. It has been demonstrated that magnetic properties can be controlled by electrical and optical stimuli in various magnets. Here we find that heat-treatment allows the control over two competing magnetic phases in the Mn-doped polar semiconductor GeTe. The onset temperatures Tc of ferromagnetism vary at low Mn concentrations by a factor of five to six with a maximum Tc ≈ 180 K, depending on the selected phase. Analyses in terms of synchrotron x-ray diffraction and energy dispersive x-ray spectroscopy indicate a possible segregation of the Mn ions, which is responsible for the high-Tc phase. More importantly, we demonstrate that the two states can be switched back and forth repeatedly from either phase by changing the heat-treatment of a sample, thereby confirming magnetic phase-change-memory functionality.

  20. Heat-Treatment-Induced Switching of Magnetic States in the Doped Polar Semiconductor Ge1-xMnxTe.

    PubMed

    Kriener, M; Nakajima, T; Kaneko, Y; Kikkawa, A; Yu, X Z; Endo, N; Kato, K; Takata, M; Arima, T; Tokura, Y; Taguchi, Y

    2016-01-01

    Cross-control of a material property - manipulation of a physical quantity (e.g., magnetisation) by a nonconjugate field (e.g., electrical field) - is a challenge in fundamental science and also important for technological device applications. It has been demonstrated that magnetic properties can be controlled by electrical and optical stimuli in various magnets. Here we find that heat-treatment allows the control over two competing magnetic phases in the Mn-doped polar semiconductor GeTe. The onset temperatures Tc of ferromagnetism vary at low Mn concentrations by a factor of five to six with a maximum Tc ≈ 180 K, depending on the selected phase. Analyses in terms of synchrotron x-ray diffraction and energy dispersive x-ray spectroscopy indicate a possible segregation of the Mn ions, which is responsible for the high-Tc phase. More importantly, we demonstrate that the two states can be switched back and forth repeatedly from either phase by changing the heat-treatment of a sample, thereby confirming magnetic phase-change-memory functionality. PMID:27160657

  1. Heat-Treatment-Induced Switching of Magnetic States in the Doped Polar Semiconductor Ge1−xMnxTe

    PubMed Central

    Kriener, M.; Nakajima, T.; Kaneko, Y.; Kikkawa, A.; Yu, X. Z.; Endo, N.; Kato, K.; Takata, M.; Arima, T.; Tokura, Y.; Taguchi, Y.

    2016-01-01

    Cross-control of a material property - manipulation of a physical quantity (e.g., magnetisation) by a nonconjugate field (e.g., electrical field) – is a challenge in fundamental science and also important for technological device applications. It has been demonstrated that magnetic properties can be controlled by electrical and optical stimuli in various magnets. Here we find that heat-treatment allows the control over two competing magnetic phases in the Mn-doped polar semiconductor GeTe. The onset temperatures Tc of ferromagnetism vary at low Mn concentrations by a factor of five to six with a maximum Tc ≈ 180 K, depending on the selected phase. Analyses in terms of synchrotron x-ray diffraction and energy dispersive x-ray spectroscopy indicate a possible segregation of the Mn ions, which is responsible for the high-Tc phase. More importantly, we demonstrate that the two states can be switched back and forth repeatedly from either phase by changing the heat-treatment of a sample, thereby confirming magnetic phase-change-memory functionality. PMID:27160657

  2. Magnetization steps in a diluted Heisenberg antiferromagnetic chain: Theory and experiments on (CH3)4NMnxCd1-xCl3

    NASA Astrophysics Data System (ADS)

    Paduan-Filho, A.; Oliveira, N. F.; Bindilatti, V.; Foner, S.; Shapira, Y.

    2003-12-01

    A theory for the equilibrium low-temperature magnetization M of a diluted Heisenberg antiferromagnetic chain is presented. Only the nearest-neighbor (NN) exchange interaction is included, and the distribution of the magnetic ions is assumed to be random. Values of the magnetic fields Bi at the magnetization steps (MST’s) from finite chains with two to five spins (pairs, triplets, quartets, and quintets) are given for chains composed of spins S=5/2. The magnitudes of these MST’s as a function of the fraction, x, of cations that are magnetic are given for any S. An expression for the apparent saturation value of M is derived. The magnetization curve, M versus B, is calculated using the exact contributions of finite chains with one to five spins, and the “rise and ramp approximation” for longer chains. An expression for the low-temperature saturation magnetic field Bs(n) of a finite chain with n spins is given. Some nonequilibrium effects that occur in a rapidly changing B are also considered. Some of these result from the absence of thermal equilibrium within the sample itself, whereas others are caused by the absence of thermal equilibrium between the sample and its environment (e.g., liquid-helium bath). Specific nonequilibrium models based on earlier treatments of the phonon bottleneck, and of spin flips associated with cross relaxation and with level crossings (anticrossings), are discussed. Magnetization data on powders of TMMC diluted with cadmium [i.e., (CH3)4NMnxCd1-xCl3, with 0.16⩽x⩽0.50] were measured at 0.55 K in 18-T superconducting magnets. The field B1 at the first MST from pairs is used to determine the NN exchange constant J. This J/kB changes from -5.9 K to -6.5 K as x increases from 0.16 to 0.50. The magnetization curves obtained in the superconducting magnets are compared with simulations based on the equilibrium theory. A reasonably good agreement is found. Data for the differential susceptibility, dM/dB, were taken in pulsed magnetic

  3. Optical and magnetic studies of Zn1-2yNiyCoyO (y ≤ 0.05) degenerate semi-magnetic semiconductor

    NASA Astrophysics Data System (ADS)

    Thota, Subhash; Kumar, Jitendra

    2012-06-01

    Semi-magnetic semiconductors of type Zn1-2yNiyCoyO (0.001≤y≤0.05) have been synthesized by sol-gel process. The products exhibit wurtzite h.c.p structure similar to pure ZnO at low compositions although for y = 0.1 and beyond, ZnCo2O4 (cubic, a = 8.094Å, Z = 8) and NiO (hexagonal, a = 2.954Å, c = 7.236Å, Z = 3) emerge as secondary phases. The average crystallite size found to decrease with increase in dopant concentration (y); typical values being 76 and 12 nm for y = 0.001 and 0.5, respectively. The optical studies provide evidence for the occupancy of Zn2+ site with Co2+ or Ni2+ ion and depict blue shift amounting to increase in the energy band gap (Eg) from 3.29 to 3.72 eV with increase in the dopant content (y) from 0.001 to 0.05 which can be attributed to finite size and/or Burstein-Moss effect reported for degenerated semiconductors. The temperature dependent dc-magnetic susceptibility χ(T) data reveals ferrimagnetic ordering with Néel temperature (TN) ≈ 5-10 K. These results are in-line with the earlier findings of antiferromagnetic nature of Zn1-yCoyO and ferromagnetic ordering in Zn1-yNiyO system.

  4. Study of the oxygen vacancy influence on magnetic properties of Fe- and Co-doped SnO2 diluted alloys

    PubMed Central

    2012-01-01

    Transition-metal (TM)-doped diluted magnetic oxides (DMOs) have attracted attention from both experimental and theoretical points of view due to their potential use in spintronics towards new nanostructured devices and new technologies. In the present work, we study the magnetic properties of Sn0.96TM0.04O2 and Sn0.96TM0.04O1.98(VO)0.02, where TM = Fe and Co, focusing in particular in the role played by the presence of O vacancies nearby the TM. The calculated total energy as a function of the total magnetic moment per cell shows a magnetic metastability, corresponding to a ground state, respectively, with 2 and 1 μB/cell, for Fe and Co. Two metastable states, with 0 and 4 μB/cell were found for Fe, and a single value, 3 μB/cell, for Co. The spin-crossover energies (ES) were calculated. The values are ES0/2 = 107 meV and ES4/2 = 25 meV for Fe. For Co, ES3/1 = 36 meV. By creating O vacancies close to the TM site, we show that the metastablity and ES change. For iron, a new state appears, and the state with zero magnetic moment disappears. The ground state is 4 μB/cell instead of 2 μB/cell, and the energy ES2/4 is 30 meV. For cobalt, the ground state is then found with 3 μB/cell and the metastable state with 1 μB/cell. The spin-crossover energy ES1/3 is 21 meV. Our results suggest that these materials may be used in devices for spintronic applications that require different magnetization states. PMID:23020790

  5. Magnetization steps in the diluted Heisenberg layer materials ( CH3 NH3 )2 Mnx Cd1-x Cl4 : Equilibrium data at 0.6 K

    NASA Astrophysics Data System (ADS)

    Paduan-Filho, A.; Gratens, X.; Bindilatti, V.; Oliveira, N. F., Jr.; Shapira, Yaacov

    2005-08-01

    The magnetization M of (CH3NH3)2MnxCd1-xCl4 , with x from 0.025 up to 0.265, was measured at 0.6 K in a slowly varying magnetic field B up to 17 T. The exchange interaction in these strongly diluted planar magnetic materials is antiferromagnetic. The in-plane cation structure is well approximated by a square lattice. The observed qualitative features, listed in the order that they appear in increasing B , are as follows: a fast rise of M , starting at B=0 ; a magnetization plateau (plateau of “apparent saturation”); a large magnetization step (MST), attributed to nearest-neighbor (NN) pairs; a second magnetization plateau; another large MST from NN pairs; and a third plateau that is not completed below the highest available B . These features are expected from the NN cluster model presented in the preceding paper. The magnetic fields at the two MST’s give J1/kB=(-4.39±0.10)K for the NN exchange constant. This value is slightly lower than reported for the undiluted (x=1) member of this series, (CH3NH3)2MnCl4 . A smaller J1 when x⩽0.265 may be the result of an in-plane expansion with decreasing x , caused by the slightly larger Cd2+ ion compared to Mn2+ . Analysis of the initial rise of M at low B indicates the presence of weak interactions that are not included in the NN cluster model. This conclusion is consistent with the observation (to be reported later) of a weak exchange interaction with a neighbor that is more distant than a NN. The apparent saturation value Ms , at the first magnetization plateau, was determined for all seven samples. There is a fair agreement with the values expected from a random distribution of the Mn ions over all cation sites. The largest deviation is for samples with x⩾0.15 , where the measured Ms is somewhat higher. In the same samples the magnetization jump ΔM at the MST’s from NN pairs is somewhat smaller than for a random Mn distribution. A proposed explanation of the discrepancies for x⩾0.15 postulates that the

  6. SEMICONDUCTOR DEVICES MEMS magnetic field sensor based on silicon bridge structure

    NASA Astrophysics Data System (ADS)

    Guangtao, Du; Xiangdong, Chen; Qibin, Lin; Hui, Li; Huihui, Guo

    2010-10-01

    A MEMS piezoresistive magnetic field sensor based on a silicon bridge structure has been simulated and tested. The sensor consists of a silicon sensitivity diaphragm embedded with a piezoresistive Wheatstone bridge, and a ferromagnetic magnet adhered to the sensitivity diaphragm. When the sensor is subjected to an external magnetic field, the magnetic force bends the silicon sensitivity diaphragm, producing stress and resistors change of the Wheatstone bridge and the output voltage of the sensor. Good agreement is observed between the theory and measurement behavior of the magnetic field sensor. Experimental results demonstrate that the maximum sensitivity and minimum resolution are 48 m V/T and 160 μT, respectively, making this device suitable for strong magnetic field measurement. Research results indicate that the sensor repeatability and dynamic response time are about 0.66% and 150 ms, respectively.

  7. Evidence of dilute ferromagnetism in rare-earth doped yttrium aluminium garnet

    SciTech Connect

    Farr, Warrick G.; Goryachev, Maxim; Le Floch, Jean-Michel; Tobar, Michael E.; Bushev, Pavel

    2015-09-21

    This work demonstrates strong coupling regime between an erbium ion spin ensemble and microwave hybrid cavity-whispering gallery modes in a yttrium aluminium garnet dielectric crystal. Coupling strengths of 220 MHz and mode quality factors in excess of 10{sup 6} are demonstrated. Moreover, the magnetic response of high-Q modes demonstrates behaviour which is unusual for paramagnetic systems. This behaviour includes hysteresis and memory effects. Such qualitative change of the system's magnetic field response is interpreted as a phase transition of rare earth ion impurities. This phenomenon is similar to the phenomenon of dilute ferromagnetism in semiconductors. The clear temperature dependence of the phenomenon is demonstrated.

  8. Absence of exchange interaction between localized magnetic moments and conduction-electrons in diluted Er{sup 3+} gold-nanoparticles

    SciTech Connect

    Lesseux, G. G. Urbano, R. R.; Iwamoto, W.; García-Flores, A. F.; Rettori, C.

    2014-05-07

    The Electron Spin Resonance (ESR) of diluted Er{sup 3+} magnetic ions in Au nanoparticles (NPs) is reported. The NPs were synthesized by reducing chloro triphenyl-phosphine gold(I) and erbium(III) trifluoroacetate. The Er{sup 3+} g-value along with the observed hyperfine splitting indicate that the Er{sup 3+} impurities are in a local cubic symmetry. Furthermore, the Er{sup 3+} ESR spectra show that the exchange interaction between the 4f and the conduction electrons (ce) is absent or negligible in Au{sub 1–x}Er{sub x} NPs, in contrast to the ESR results in bulk Au{sub 1–x}Er{sub x}. Therefore, the nature of this interaction needs to be reexamined at the nano scale range.

  9. PwrSoC (integration of micro-magnetic inductors/transformers with active semiconductors) for more than Moore technologies

    NASA Astrophysics Data System (ADS)

    Mathuna, Cian Ó.; Wang, Ningning; Kulkarni, Santosh; Roy, Saibal

    2013-07-01

    This paper introduces the concept of power supply on chip (PwrSoC) which will enable the development of next-generation, functionally integrated, power management platforms with applications in dc-dc conversion, gate drives, isolated power transmission and ultimately, high granularity, on-chip, power management for mixed-signal, SOC chips. PwrSoC will integrate power passives with the power management IC, in a 3D stacked or monolithic form factor, thereby delivering the performance of a highefficiency dc-dc converter within the footprint of a low-efficiency linear regulator. A central element of the PwrSoC concept is the fabrication of power micro-magnetics on silicon to deliver micro-inductors and micro-transformers. The paper details the magnetics on silicon process which combines thin film magnetic core technology with electroplated copper conductors. Measured data for micro-inductors show inductance operation up to 20 MHz, footprints down to 0.5 mm2, efficiencies up to 93% and dc current carrying capability up to 600 mA. Measurements on micro-transformers show voltage gain of approximately - 1 dB at between 10 MHz and 30 MHz. Contribution to the Topical Issue “International Semiconductor Conference Dresden-Grenoble - ISCDG 2012”, Edited by Gérard Ghibaudo, Francis Balestra and Simon Deleonibus.

  10. Metal-oxide-semiconductor characterization of silicon surfaces thermally oxidized after reactive ion etching and magnetically enhanced reactive ion etching

    SciTech Connect

    Settlemyer, K.T. Jr.; Ruzyllo, J.; Hwang, D.K.

    1993-03-01

    In this study the performance of reactive ion etching (RIE) and magnetically enhanced reactive ion etching (MERIE) processes in pregate oxidation etching of the field oxide are compared. The comparison is carried out through metal-oxide-semiconductor (MOS) characterization of oxides and interfaces formed on etched silicon surfaces. The results revealed differences in the outcome of RIE and MERIE processes with the latter displaying overall superior characteristics. MERIE induced surface damage is shallower, and is mostly removed during oxide growth. RIE damage propagates deeper into the Si bulk and still influences the MOS devices even after the top Si layers are converted into the oxide. The results obtained emphasize the importance of adequate cleaning of silicon surfaces following RIE/MERIE processes. 5 refs., 4 figs.

  11. Propagation of electro-kinetic waves in magnetized GaN semiconductor with nano-sized ion colloids

    SciTech Connect

    Saxena, Ajay; Sharma, Giriraj; Jat, K. L.; Rishi, M. P.

    2015-07-31

    Based on hydrodynamic model of multi-component plasma, an analytical study on propagation of longitudinal electro-kinetic (LEK) waves in wurtzite and zincblende structures of GaN is carried out. Nano-sized ion colloids (NICs) are embedded in the sample by the technique of ion-implantation. The implanted NICs are considered massive by an order as compared to the host lattice points and do not participate in Based LEK perturbations. Though, the NICs are continuously bombarded by the electrons as well as the holes yet, the former acquires a net negative charge owing to relatively higher mobility of electrons and consequently results into depletion of electron density in the medium. It i s found that the presence of charged NICs significantly modifies the dispersion and amplification characteristics of LEK waves in magnetized GaN semiconductor plasma and their role becomes increasingly effective as the fraction of charge on them increases.

  12. Formation of the S  =  1 paramagnetic centers in the bond-diluted spin-gap magnet.

    PubMed

    Glazkov, V N; Krasnikova, Yu V; Hüvonen, D; Zheludev, A

    2016-05-25

    Electron spin resonance experiment reveals that non-magnetic bond doping of the spin-gap magnet (C4H12N2)Cu2Cl6 (abbreviated PHCC) results in the formation of S  =  1 paramagnetic centers that dominate low-temperature ESR response. We have followed evolution of this signal with doping impurity content and have found that the concentraion of these centers is quadratic over the impurity content. We also observe coexistence of the ESR responses from these local centers and from delocalized triplet excitations over a certain temperature range. PMID:27119200

  13. Micromachined vertical Hall magnetic field sensor in standard complementary metal oxide semiconductor technology

    NASA Astrophysics Data System (ADS)

    Paranjape, M.; Ristic, Lj.

    1992-06-01

    A novel 2D micromachined vertical Hall magnetic field sensor structure has been designed and fabricated using a commercially available 3 micron CMOS process. The device can detect two magnetic field components in the plane of the chip surface. The sensor exhibits a linear response and shows no cross-sensitivity between channels.

  14. Polarized x-ray spectroscopy of quaternary ferromagnetic semiconductor (Ga,Mn)(As,P)

    SciTech Connect

    Wadley, P.; Casiraghi, A.; Wang, M.; Edmonds, K.W.; Campion, R.P.; Rushforth, A.W.; Gallagher, B.L.; Staddon, C.R.; Laan, G. van der; Arenholz, E.

    2011-05-10

    X-ray magnetic circular dichroism (XMCD) is used to study the magnetic and electronic properties of the quaternary diluted magnetic semiconductor (Ga,Mn)(As,P) as a function of the P concentration y. A clear signature of the variation in strain, from compressive to tensile on increasing y, is observed in the angular dependence of the hybridized d{sup 5}-like Mn L{sub 2,3} XMCD spectra. The ferromagnetic transition temperature and magnetic moment per Mn ion both decrease steadily with increasing y.

  15. Magnetoamplification in a bipolar magnetic junction transistor.

    PubMed

    Rangaraju, N; Peters, J A; Wessels, B W

    2010-09-10

    We have demonstrated the first bipolar magnetic junction transistor using a dilute magnetic semiconductor. For an InMnAs p-n-p transistor magnetoamplification is observed at room temperature. The observed magnetoamplification is attributed to the magnetoresistance of the magnetic semiconductor InMnAs heterojunction. The magnetic field dependence of the transistor characteristics confirm that the magnetoamplification results from the junction magnetoresistance. To describe the experimentally observed transistor characteristics, we propose a modified Ebers-Moll model that includes a series magnetoresistance attributed to spin-selective conduction. The capability of magnetic field control of the amplification in an all-semiconductor transistor at room temperature potentially enables the creation of new computer logic architecture where the spin of the carriers is utilized.

  16. Room-temperature ferromagnetism observed in Nd-doped In2O3 dilute magnetic semiconducting nanowires

    NASA Astrophysics Data System (ADS)

    Lv, Zhanpeng; Zhang, Junran; Niu, Wei; Zhang, Minhao; Song, Li; Zhu, Hairong; Wang, Xuefeng

    2016-09-01

    Nd-doped In2O3 nanowires were fabricated by an Au-catalyzed chemical vapor deposition method. Nd atoms were successfully doped into the In2O3 host lattice structure, as revealed by energy dispersive x-ray spectroscopy, x-ray photoelectron spectroscopy, Raman spectroscopy, and x-ray diffraction. Robust room temperature ferromagnetism was observed in Nd-doped In2O3 nanowires, which was attributed to the long-range-mediated magnetization among Nd3+-vacancy complexes through percolation-bound magnetic polarons. Project supported by the National Natural Science Foundation of China (Grant No. 11274003), the Priority Academic Program Development of Jiangsu Higher Education Institutions, China, and the Fundamental Research Funds for the Central Universities, China.

  17. Magnetic ordering in the ultrapure site-diluted spin chain materials SrCu1 -xNixO2

    NASA Astrophysics Data System (ADS)

    Simutis, G.; Thede, M.; Saint-Martin, R.; Mohan, A.; Baines, C.; Guguchia, Z.; Khasanov, R.; Hess, C.; Revcolevschi, A.; Büchner, B.; Zheludev, A.

    2016-06-01

    The muon spin rotation technique is used to study magnetic ordering in ultrapure samples of SrCu1 -xNixO2 , an archetypical S =1 /2 antiferromagnetic Heisenberg chain system with a small number of S =1 defects. The ordered state in the parent compound is shown to be highly homogeneous, contrary to a previous report [M. Matsuda et al., Phys. Rev. B 55, R11953 (1997), 10.1103/PhysRevB.55.R11953]. Even a minute number of Ni impurities results in inhomogeneous order and a decrease of the transition temperature. At as little as 0.5 % Ni concentration, magnetic ordering is entirely suppressed. The results are compared to previous theoretical studies of weakly coupled spin chains with site defects.

  18. Enhancement of magnetic moment in ZnxFe3-xO4 thin films with dilute Zn substitution

    NASA Astrophysics Data System (ADS)

    Yuan, Honglei; Liu, Er; Yin, Yuli; Zhang, Wen; Wong, P. K. Johnny; Zheng, Jian-Guo; Huang, Zhaocong; Ou, Huiling; Zhai, Ya; Xu, Qingyu; Du, Jun; Zhai, Hongru

    2016-06-01

    Highly (111)-textured ZnxFe3-xO4 thin films were grown by pulsed laser deposition on silicon substrates. The spin and orbital magnetic moments of the ZnxFe3-xO4 thin films have been obtained by X-ray magnetic circular dichroism (XMCD) and sum rule analysis. The total magnetic moments thus extracted are in good agreement with the values obtained by vibrating sample magnetometer. Both the unquenched orbital moment and the ratio of orbital-to-spin moment first increase significantly with increasing Zn substitution at a low concentration range ( 0 ≤x ≤0.1 ), and then decrease at a higher concentration (x = 0.3). The underlying site-specific doping mechanisms involved here have been elucidated by detailed analysis of the XMCD of ZnxFe3-xO4 films. Our work demonstrates a practical means to manipulate the spin-orbit coupling in the ZnxFe3-xO4 thin films via Zn impurity doping.

  19. Magnetic-field-induced nonparabolicity of exciton dispersion in semiconductors with a nondegenerate valence band

    SciTech Connect

    Loginov, D. K. Chegodaev, A. D.

    2011-09-15

    The nonparabolicity of exciton dispersion due to the mixing of the ground and excited states of an exciton in an external magnetic field perpendicular to the direction of its motion is considered. A model describing this effect is proposed and the nonparabolicity for an exciton in a CdTe crystal is calculated. The magnetic-field induced exciton nonparabolicity is compared with the effect caused by the nonparabolicity of the electron energy dispersion in the conduction band.

  20. Magnetic forces and stationary electron flow in a three-terminal semiconductor quantum ring.

    PubMed

    Poniedziałek, M R; Szafran, B

    2010-06-01

    We study stationary electron flow through a three-terminal quantum ring and describe effects due to deflection of electron trajectories by classical magnetic forces. We demonstrate that generally at high magnetic field (B) the current is guided by magnetic forces to follow a classical path, which for B > 0 leads via the left arm of the ring to the left output terminal. The transport to the left output terminal is blocked for narrow windows of magnetic field for which the interference within the ring leads to formation of wavefunctions that are only weakly coupled to the output channel wavefunctions. These interference conditions are accompanied by injection of the current to the right arm of the ring and by appearance of sharp peaks of the transfer probability to the right output terminal. We find that these peaks at high magnetic field are attenuated by thermal widening of the transport window. We also demonstrate that the interference conditions that lead to their appearance vanish when elastic scattering within the ring is present. The clear effect of magnetic forces on the transfer probabilities disappears along with Aharonov-Bohm oscillations in a chaotic transport regime that is found for rings whose width is larger than the width of the channels.

  1. Electron Scattering on a Magnetic Skyrmion in the Nonadiabatic Approximation.

    PubMed

    Denisov, K S; Rozhansky, I V; Averkiev, N S; Lähderanta, E

    2016-07-01

    We present a theory of electron scattering on a magnetic Skyrmion for the case when the exchange interaction is moderate so that the adiabatic approximation and the Berry phase approach are not applicable. The theory explains the appearance of a topological Hall current in the systems with magnetic Skyrmions, the special importance of which is its applicability to dilute magnetic semiconductors with a weak exchange interaction. PMID:27447521

  2. A pH-responsive and magnetically separable dynamic system for efficient removal of highly dilute antibiotics in water.

    PubMed

    Liu, Wanpeng; Ma, Jianqing; Shen, Chensi; Wen, Yuezhong; Liu, Weiping

    2016-03-01

    In order to control the antibiotic-related crisis and reduce the negative impacts on the environment and human health, it is urgent to develop effective technologies to eliminate residual antibiotics in water. Herein, we successfully fabricated a novel, pH-responsive and magnetically separable dynamic system for micropollutant adsorption and oxidation degradation in graphene oxide (GO)/nanoscale zero-valent iron (nZVI) composite with macroscopic structure. The pH-responsive self-assembly behavior of GO/nZVI composite was explored. The macroscopic structure of GO/nZVI composite serves as an excellent adsorbent for antibiotic removal in water. The adsorption process is fast and highly efficient even in high salty and humic acid containing water under acid to neutral conditions. After removal antibiotics, GO/nZVI composite is conveniently separated by magnetic system and put into alkaline solution (pH > 9) for adsorbent regeneration. Interestingly, it is found that at pH > 9, GO/nZVI composite disassembles partly upon increasing pH values, leading to the elution of antibiotics for efficient antibiotics degradation by ozonization. More importantly, this pH-responsive GO/nZVI system exhibits high removal efficiency, high stability, reusability and easily separation, making it a promising method for treatment of water with micropollutants. PMID:26724436

  3. A pH-responsive and magnetically separable dynamic system for efficient removal of highly dilute antibiotics in water.

    PubMed

    Liu, Wanpeng; Ma, Jianqing; Shen, Chensi; Wen, Yuezhong; Liu, Weiping

    2016-03-01

    In order to control the antibiotic-related crisis and reduce the negative impacts on the environment and human health, it is urgent to develop effective technologies to eliminate residual antibiotics in water. Herein, we successfully fabricated a novel, pH-responsive and magnetically separable dynamic system for micropollutant adsorption and oxidation degradation in graphene oxide (GO)/nanoscale zero-valent iron (nZVI) composite with macroscopic structure. The pH-responsive self-assembly behavior of GO/nZVI composite was explored. The macroscopic structure of GO/nZVI composite serves as an excellent adsorbent for antibiotic removal in water. The adsorption process is fast and highly efficient even in high salty and humic acid containing water under acid to neutral conditions. After removal antibiotics, GO/nZVI composite is conveniently separated by magnetic system and put into alkaline solution (pH > 9) for adsorbent regeneration. Interestingly, it is found that at pH > 9, GO/nZVI composite disassembles partly upon increasing pH values, leading to the elution of antibiotics for efficient antibiotics degradation by ozonization. More importantly, this pH-responsive GO/nZVI system exhibits high removal efficiency, high stability, reusability and easily separation, making it a promising method for treatment of water with micropollutants.

  4. Using x-ray diffraction to identify precipitates in transition metal doped semiconductors

    NASA Astrophysics Data System (ADS)

    Zhou, Shengqiang; Potzger, K.; Talut, G.; von Borany, J.; Skorupa, W.; Helm, M.; Fassbender, J.

    2008-04-01

    In the past decade, room temperature ferromagnetism was often observed in transition metal doped semiconductors, which were claimed as diluted magnetic semiconductors (DMS). Nowadays intensive activities are devoted to clarify wether the observed ferromagnetism stems from carrier mediated magnetic impurities, ferromagnetic precipitates, or spinodal decomposition. In this paper, we have correlated the structural and magnetic properties of transition metal doped ZnO, TiO2, and Si, prepared by ion implantation. Crystalline precipitates, i.e., transition metal (Co, Ni) and Mn-silicide nanocrystals, are responsible for the magnetism. Additionally due to their orientation nature with respect to the host, these nanocrystals in some cases are not detectable by conventional x-ray diffraction (XRD). This nature results in the pitfall of using XRD to exclude magnetic precipitates in DMS materials.

  5. Zeeman effect and magnetic anomalies in narrow-gap semiconductor quantum dots

    NASA Astrophysics Data System (ADS)

    Prado, S. J.; Trallero-Giner, C.; López-Richard, V.; Alcalde, A. M.; Marques, G. E.

    2004-01-01

    We present a systematic theoretical study, based on the Kane-Weiler 8×8 k· p model, of the linear Zeeman splitting introduced by the interaction between the angular momentum and the magnetic field which can give a measure of the non-linear Zeeman effect associated with interband coupling and diamagnetic contributions. The conduction and valence bands g-factors are calculated for InSb spherical and semi-spherical quantum dots. The calculations of the g-factors showed an almost linear dependence, for the ground state, on the magnetic field. We have also found that the strong magnetic field dependence as well as the dependence on the dot size of the effective spin splitting can be unambiguously attributed to the strength of the inter-level mixing.

  6. Precise tuning of the Curie temperature of (Ga,Mn)As-based magnetic semiconductors by hole compensation: Support for valence-band ferromagnetism

    NASA Astrophysics Data System (ADS)

    Zhou, Shengqiang; Li, Lin; Yuan, Ye; Rushforth, A. W.; Chen, Lin; Wang, Yutian; Böttger, R.; Heller, R.; Zhao, Jianhua; Edmonds, K. W.; Campion, R. P.; Gallagher, B. L.; Timm, C.; Helm, M.

    2016-08-01

    For the prototype diluted ferromagnetic semiconductor (Ga,Mn)As, there is a fundamental concern about the electronic states near the Fermi level, i.e., whether the Fermi level resides in a well-separated impurity band derived from Mn doping (impurity-band model) or in the valence band that is already merged with the Mn-derived impurity band (valence-band model). We investigate this question by carefully shifting the Fermi level by means of carrier compensation. We use helium-ion implantation, a standard industry technology, to precisely compensate the hole doping of GaAs-based diluted ferromagnetic semiconductors while keeping the Mn concentration constant. We monitor the change of Curie temperature (TC) and conductivity. For a broad range of samples including (Ga,Mn)As and (Ga,Mn)(As,P) with various Mn and P concentrations, we observe a smooth decrease of TC with carrier compensation over a wide temperature range while the conduction is changed from metallic to insulating. The existence of TC below 10 K is also confirmed in heavily compensated samples. Our experimental results are naturally explained within the valence-band picture.

  7. Radiation and Magnetic Field Effects on New Semiconductor Power Devices for Hl-Lhc Experiments

    NASA Astrophysics Data System (ADS)

    Fiore, S.; Abbate, C.; Baccaro, S.; Busatto, G.; Citterio, M.; Iannuzzo, F.; Lanza, A.; Latorre, S.; Lazzaroni, M.; Sanseverino, A.; Velardi, F.

    2014-06-01

    The radiation hardness of commercial Silicon Carbide and Gallium Nitride power MOSFETs is presented in this paper, for Total Ionizing Dose effects and Single Event Effects, under γ, neutrons, protons and heavy ions. Similar tests are discussed for commercial DC-DC converters, also tested in operation under magnetic field.

  8. Structural disorder and magnetism in the spin-gapless semiconductor CoFeCrAl

    NASA Astrophysics Data System (ADS)

    Choudhary, Renu; Kharel, Parashu; Valloppilly, Shah R.; Jin, Yunlong; O'Connell, Andrew; Huh, Yung; Gilbert, Simeon; Kashyap, Arti; Sellmyer, D. J.; Skomski, Ralph

    2016-05-01

    Disordered CoFeCrAl and CoFeCrSi0.5Al0.5 alloys have been investigated experimentally and by first-principle calculations. The melt-spun and annealed samples all exhibit Heusler-type superlattice peaks, but the peak intensities indicate a substantial degree of B2-type chemical disorder. Si substitution reduces the degree of this disorder. Our theoretical analysis also considers several types of antisite disorder (Fe-Co, Fe-Cr, Co-Cr) in Y-ordered CoFeCrAl and partial substitution of Si for Al. The substitution transforms the spin-gapless semiconductor CoFeCrAl into a half-metallic ferrimagnet and increases the half-metallic band gap by 0.12 eV. Compared CoFeCrAl, the moment of CoFeCrSi0.5Al0.5 is predicted to increase from 2.01 μB to 2.50 μB per formula unit, in good agreement with experiment.

  9. Manipulable GMR Effect in a δ-Doped Magnetically Confined Semiconductor Heterostructure

    NASA Astrophysics Data System (ADS)

    Jiang, Ya-Qing; Lu, Mao-Wang; Huang, Xin-Hong; Yang, Shi-Peng; Tang, Qiang

    2016-06-01

    A giant magnetoresistance (GMR) device formed by depositing two parallel nanosized ferromagnetic strips on top of a semiconductor heterostructure has been proposed theoretically (Zhai et al. in Phys Rev B 66:125305, 2002). For the sake of manipulating its performance, we introduce a tunable δ-potential into this device with the help of atomic-layer doping techniques such as molecular beam epitaxy (MBE) or metal-organic chemical-vapor deposition. We investigate theoretically the impact of such δ-doping on the magnetoresistance ratio (MR) of the GMR device. We find that, although the δ-doping is embedded in the device, a considerable GMR effect still exists due to the significant difference in electronic transmission between parallel (P) and antiparallel (AP) configurations. Moreover, the calculated results show that the MR of the GMR device varies sensitively with the weight and/or position of the δ-doping. Thus, the GMR device can be controlled by changing the δ-doping to obtain an adjustable GMR device for magnetoelectronics applications.

  10. Spectroscopic study of partially-ordered semiconductor heterojunction under high pressure and high magnetic field

    SciTech Connect

    Yu, P.Y.; Martinez, G.; Zeman, J.; Uchida, K.

    2000-12-31

    Photoluminescence upconversion (PLU) is a phenomenon in which a sample emits photons with energy higher than that of the excitation photon. This effect has been observed in many materials including rare earth ions doped in insulating hosts and semiconductor heterostructures without using high power lasers as the excitation source. Recently, this effect has been observed also in partially CuPt-ordered GaInP{sub 2} epilayers grown on GaAs substrates. As a spectroscopic technique photoluminescence upconversion is particularly well suited for studying band alignment at heterojunction interface. The value of band-offset has been determined with meV precision using magneto-photoluminescence. Using the fact that the pressure coefficient of electrons in GaAs is higher than those in GaInP{sub 2} they have been able to manipulate the band-offset at the GaInP/GaAs interface. By converting the band-offset from Type I to Type II they were able to demonstrate that the efficiency of the upconversion process is greatly enhanced by a Type II band-offset.

  11. LDRD-LW Final Report: 07-LW-041 "Magnetism in Semiconductor Nanocrystals: New Physics at the Nanoscale"

    SciTech Connect

    Meulenberg, R W; Lee, J I; McCall, S K

    2009-10-19

    The work conducted in this project was conducted with the aim of identifying and understanding the origin and mechanisms of magnetic behavior in undoped semiconductor nanocrystals (NCs), specifically those composed of CdSe. It was anticipated that the successful completion of this task would have the effect of addressing and resolving significant controversy over this topic in the literature. Meanwhile, application of the resultant knowledge was expected to permit manipulation of the magnetic properties, particularly the strength of any magnetic effects, which is of potential relevance in a range of advanced technologies. More specifically, the project was designed and research conducted with the goal of addressing the following series of questions: (1) How does the magnitude of the magnetism in CdSe NCs change with the organic molecules used to passivate their surface the NC size? i.e. Is the magnetism an intrinsic effect in the nanocrystalline CdSe (as observed for Au NCs) or a surface termination driven effect? (2) What is the chemical (elemental) nature of the magnetism? i.e. Are the magnetic effects associated with the Cd atoms or the Se atoms or both? (3) What is/are the underlying mechanism(s)? (4) How can the magnetism be controlled for further applications? To achieve this goal, several experimental/technical milestones were identified to be fulfilled during the course of the research: (A) The preparation of well characterized CdSe NCs with varying surface termination (B) Establishing the extent of the magnetism of these NCs using magnetometry (particularly using superconducting interference device [SQUID]) (C) Establishing the chemical nature of the magnetism using x-ray magnetic circular dichroism (XMCD) - the element specific nature of the technique allows identification of the element responsible for the magnetism (D) Identification of the effect of surface termination on the empty densities of states (DOS) using x-ray absorption spectroscopy (XAS

  12. Semiconductor structure

    NASA Technical Reports Server (NTRS)

    Hovel, Harold J. (Inventor); Woodall, Jerry M. (Inventor)

    1979-01-01

    A technique for fabricating a semiconductor heterostructure by growth of a ternary semiconductor on a binary semiconductor substrate from a melt of the ternary semiconductor containing less than saturation of at least one common ingredient of both the binary and ternary semiconductors wherein in a single temperature step the binary semiconductor substrate is etched, a p-n junction with specific device characteristics is produced in the binary semiconductor substrate by diffusion of a dopant from the melt and a region of the ternary semiconductor of precise conductivity type and thickness is grown by virtue of a change in the melt characteristics when the etched binary semiconductor enters the melt.

  13. Novel room temperature ferromagnetic semiconductors

    SciTech Connect

    Gupta, Amita

    2004-06-01

    for Zn a 2+ state in the ZnO lattice. Ferromagnetic Resonance (FMR) technique is used to confirm the existence of ferromagnetic ordering at temperatures as high as 425K. The ab initio calculations were found to be consistent with the observation of ferromagnetism arising from fully polarized Mn 2+ state. The key to observed room temperature ferromagnetism in this system is the low temperature processing, which prevents formation of clusters, secondary phases and the host ZnO from becoming n-type. The electronic structure of the same Mn doped ZnO thin films studied using XAS, XES and RIXS, revealed a strong hybridization between Mn 3d and O 2p states, which is an important characteristic of a Dilute magnetic Semiconductor (DMS). It is shown that the various processing conditions like sintering temperature, dopant concentration and the properties of precursors used for making of DMS have a great influence on the final properties. Use of various experimental techniques to verify the physical properties, and to understand the mechanism involved to give rise to ferromagnetism is presented. Methods to improve the magnetic moment in Mn doped ZnO are also described. New promising DMS materials (such as Cu doped ZnO are explored). The demonstrated new capability to fabricate powder, pellets, and thin films of room temperature ferromagnetic semiconductors thus makes possible the realization of a wide range of complex elements for a variety of new multifunctional phenomena related to Spintronic devices as well as magneto-optic components.

  14. Entanglement and manipulation of the magnetic and spin–orbit order in multiferroic Rashba semiconductors

    PubMed Central

    Krempaský, J.; Muff, S.; Bisti, F.; Fanciulli, M.; Volfová, H.; Weber, A. P.; Pilet, N.; Warnicke, P.; Ebert, H.; Braun, J.; Bertran, F.; Volobuev, V. V.; Minár, J.; Springholz, G.; Dil, J. H.; Strocov, V. N.

    2016-01-01

    Entanglement of the spin–orbit and magnetic order in multiferroic materials bears a strong potential for engineering novel electronic and spintronic devices. Here, we explore the electron and spin structure of ferroelectric α-GeTe thin films doped with ferromagnetic Mn impurities to achieve its multiferroic functionality. We use bulk-sensitive soft-X-ray angle-resolved photoemission spectroscopy (SX-ARPES) to follow hybridization of the GeTe valence band with the Mn dopants. We observe a gradual opening of the Zeeman gap in the bulk Rashba bands around the Dirac point with increase of the Mn concentration, indicative of the ferromagnetic order, at persistent Rashba splitting. Furthermore, subtle details regarding the spin–orbit and magnetic order entanglement are deduced from spin-resolved ARPES measurements. We identify antiparallel orientation of the ferroelectric and ferromagnetic polarization, and altering of the Rashba-type spin helicity by magnetic switching. Our experimental results are supported by first-principles calculations of the electron and spin structure. PMID:27767052

  15. Raman spectra of Cu2BIICIV X4 VI magnetic quaternary semiconductor compounds with tetragonal stannite type structure

    NASA Astrophysics Data System (ADS)

    Rincón, C.; Quintero, M.; Power, Ch.; Moreno, E.; Quintero, E.; Henao, J. A.; Macías, M. A.; Morocoima, M.

    2015-05-01

    A comparative study of the Raman spectra of Cu2BIICIV S4 VI and Cu2BIICIV Se4 VI (where B = Mn or Fe) magnetic quaternary semiconductor compounds with stannite-type structure (I 4 ¯ 2m) has been done. Most of the fourteen Raman lines expected for these materials were observed in the spectra. The two strongest lines observed have been assigned to the IR inactive A11 and A12 stannite modes that originated from the motion of the S or Se anion around the Cu and CIV cations remaining at rest. The shift in the frequency of these two lines of about 150 cm-1 to lower energies observed in Cu2BIICIV Se4 VI compounds as compared to those in Cu2BIICIV S4 VI ones, can then be explained as due to the anion mass effect. Based on the fact that values of these frequencies depend mainly on anion mass and bond-stretching forces between nearest-neighbor atoms, the vibrational frequencies v ¯ (A12) and v ¯ (A12) of both modes for several Cu2BIICIV X4 VI stannite compounds (where X = S, Se, or Te) very close to the experimental data reported for these materials were calculated from a simple model that relates these stretching forces to the anion-cation bond-distances.

  16. Magnetically-tunable spin-selective positioning of wave functions in asymmetric semiconductor quantum structures

    NASA Astrophysics Data System (ADS)

    Lee, S.; Titova, L. V.; Furdyna, Jacek K.; Dobrowolska, M.

    2000-03-01

    It has been recently reported that the properties of self-organized CdSe quantum dots (QDs) on ZnSe change significantly when they are grown on ZnMnSe spacers separating CdSe form ZnSe.[1] To explore this effect futher, we have prepared a series of samples by depositing one monolayer (ML) of CdSe on ZnMnSe spacer layers of different thickness and different Mn concentration. The system is then capped with ZnSe. The band structure for this geometry results in an asymmetric quantum structure, where the 1 ML thick CdSe acts as a "well" between barriers comprised of ZnSe on side, and ZnMnSe on the other. When a magnetic field is applied, the Zeeman splitting of the band edges in ZnMnSe spacer moves the position of the wave function toward or away from the spacer, depending on spin orientation. Such spin-selective repositioning of the wave functions is fully confirmed by magnetic field dependence of ground state exciton transitions observed in PL. This work was supported by NSF Grant DMR 9705064. [1]C.S. Kim et.al., 9th International conference on II-VI compounds, Kyoto, Nov. 1-5, 1999.

  17. Separation of Contributions from the Ion Core and Free Charge Carriers to the Magnetic Susceptibility of an Anisotropic Semiconductor Bi2Te3-Sb2Te3 Crystal

    NASA Astrophysics Data System (ADS)

    Stepanov, N. P.; Nalivkin, V. Yu.

    2016-05-01

    A technique is presented, by which the magnetic susceptibility χ | G of the ion core of an anisotropic semiconductor Bi2Te3-Sb2Te3 crystal is determined from experimental data on the magnetic susceptibility χ ∥ and χ ⊥ obtained with allowance for the orientation of the magnetic field vector H with respect to the trigonal C3 axis of the crystal in accordance with the expression χ ∥/ χ ⊥ = ( χ ∥ eh + χ G )/( χ ⊥ eh + χ G ).In this expression, the value of the magnetic susceptibility of free charge carriers χ ∥ eh and χ ⊥ eh depending on their effective masses m ∥ * and m ⊥ * known from the experiment is calculated within the framework of the Pauli and Landau- Peierls approaches. The found value of χ | G for Bi2Te3-Sb2Te3 crystals is in good agreement with experimental data, as well as with the estimates obtained in the framework of the Larmor approach explaining, in particular, a linear dependence of the molar magnetic susceptibility on the number of electrons in the molecule observed for a large number of compounds. The proposed technique can be extended to other anisotropic semiconductors.

  18. High temperature magnetic order in Zn1‑x Mn x SnSb2+MnSb nanocomposite ferromagnetic semiconductors

    NASA Astrophysics Data System (ADS)

    Kilanski, L.; Górska, M.; Ślawska-Waniewska, A.; Lewińska, S.; Szymczak, R.; Dynowska, E.; Podgórni, A.; Dobrowolski, W.; Ralević, U.; Gajić, R.; Romčević, N.; Fedorchenko, I. V.; Marenkin, S. F.

    2016-08-01

    We present studies of structural, magnetic, and electrical properties of Zn1‑x Mn x SnSb2+MnSb nanocomposite ferromagnetic semiconductors with the average Mn-content, \\bar{x} , changing from 0.027 up to 0.138. The magnetic force microscope imaging done at room temperature shows the presence of a strong signal coming from MnSb clusters. Magnetic properties show the paramagnet-ferromagnet transition with the Curie temperature, T C, equal to about 522 K and the cluster-glass behavior with the transition temperature, T CG, equal to about 465 K, both related to MnSb clusters. The magnetotransport studies show that all investigated samples are p-type semiconductors with high hole concentration, p, changing from 1021 to 1022 cm‑3. A large increase in the resistivity as a function of the magnetic field is observed at T  <  10 K and small magnetic fields, |B|<100 mT, for all the studied samples with a maximum amplitude of the magnetoresistance about 460% at T  =  1.4 K. The large increase in the resistivity is most probably caused by the appearance of the superconducting state in the samples at T  <  4.3 K.

  19. Nonlinear Faraday effect in CdS semiconductor in an ultrahigh magnetic field

    SciTech Connect

    Druzhinin, V.V.; Tatsenko, O.M.; Bykov, A.I.

    1994-08-01

    A significant nonlinearity in the angle of rotation polarization plane was observed in CdS at wavelengths of 494 in the presence of high magnetic fields (0.5-5 MG). The onset significant nonlinearity also depended on sample temperature. An absorption study with probe wavelength of {approximately} 494 nm revealed an increase in optical transmission associated with a splitting of the conduction band. Dispersion, field and temperature curves indicate a low conduction electron mass m{sub e} = 0.3 m{sub o}. A numerical calculation and interpretation of the observed effects was carried out using band theory. The optical and magnetooptical properties of semiconducting crystals of CdS were studied, reviews of which are presented in [1,2]. This article describes joint American-Russian experiments to study the optical and magnetooptical properties of CdS in ultrahigh fields to {approximately} 7 MG.

  20. Thermodynamics of Dilute Solutions.

    ERIC Educational Resources Information Center

    Jancso, Gabor; Fenby, David V.

    1983-01-01

    Discusses principles and definitions related to the thermodynamics of dilute solutions. Topics considered include dilute solution, Gibbs-Duhem equation, reference systems (pure gases and gaseous mixtures, liquid mixtures, dilute solutions), real dilute solutions (focusing on solute and solvent), terminology, standard states, and reference systems.…

  1. Theory of optical spectra in a magnetic field in doped semiconductor quantum wells: Impurity-induced broadening and transitions

    NASA Astrophysics Data System (ADS)

    Lyo, S. K.

    1989-10-01

    The effect of carrier-impurity interactions on luminescence- and excitation-spectroscopy line shapes and the Landau-level spectral density in a strong quantizing magnetic field is examined in modulation-doped semiconductor quantum wells. The line-shape function is obtained by summing the ``ladder diagrams,'' extending our previous ``one-rung'' approximation. Apart from yielding a line broadening, the carrier-impurity interaction is found to induce off-diagonal transitions (ODT) (n-->n' n'≠n) between the Landau levels in the conduction and valence bands, breaking the usual n-->n selection rule. Here the first and second integers indicate the Landau quantum numbers in the conduction (valence) and valence (conduction) bands, respectively, for luminescence (excitation), for example, in an n-type system. The Landau-level spectral density (essential for obtaining the line-shape functions) is investigated by a self-consistent Born approximation which includes inter-Landau-level impurity scattering. The theory is applied to an n-type strained InxGa1-xAs/GaAs quantum well, where optical transitions arise between the conduction band and the strain-split in-plane ``light-hole'' band. For excitation spectra, the theory predicts that ODT introduce lines below the usual nF-->nF threshold transition as well as satellite lines between the usual main n-->n lines above the threshold (i.e., n>=nF). Here nF is the quantum number of the lowest-lying empty or partially filled conduction-band Landau level. The luminescence line shape is dominated by ODT 1, 2,...-->0 (in addition to the main 0-->0 transition) at low temperatures and by the usual n-->n transitions at high temperatures. The accuracy of the ``one-rung'' approximation is assessed.

  2. Long-lived emission in Mn doped CdS, ZnS, and ZnSe diluted magnetic semiconductor quantum dots

    NASA Astrophysics Data System (ADS)

    Proshchenko, Vitaly; Dahnovsky, Yuri

    2015-11-01

    Slow luminescence is studied in Mn doped CdS, ZnS, and ZnSe quantum dots. Because of the high degeneracy of Mn d-orbitals, we employ the multi-determinant SAC-CI computational method to determine the spin-forbidden transition from the 4T1 first excited to 6A1 ground state. We find that the transition energies for each material are in the excellent agreement with the experimental data. The computations reveal that the absorption spectra are independent of the presence of Mn impurities in quantum dots. The calculations show that the Mn impurity levels are located inside the QD gaps and the slow emission energies are independent of QD sizes. These features allow us to conclude that there are two luminescence peaks in the spectrum with fast (the higher energy) and slow (the lower energy) relaxations. In experiments sometimes the fast luminescence band disappears. This effect depends on Mn concentrations and a doping method. For different QD crystal structures the Mn-S (Se) bond lengths can vary. Therefore we find that the slow luminescence energy is very sensitive to a bond length. Indeed if we change the Mn-S bond length by 0.1 Å , the energy increases by 0.2 eV within the calculated range of bond lengths.

  3. High throughput fabrication of transition-metal-doped epitaxial ZnO thin films: A series of oxide-diluted magnetic semiconductors and their properties

    SciTech Connect

    Jin, Zhengwu; Fukumura, T.; Kawasaki, M.; Ando, K.; Saito, H.; Sekiguchi, T.; Yoo, Y. Z.; Murakami, M.; Matsumoto, Y.; Hasegawa, T.

    2001-06-11

    Combinatorial laser molecular-beam epitaxy method was employed to fabricate epitaxial ZnO thin films doped with all the 3d transition metal (TM) ions in a high throughput fashion. The solubility behavior of TM ions was discussed from the viewpoints of the ionic radius and valence state. The magneto-optical responses coincident with absorption spectra were observed for Mn- and Co-doped samples. Cathodoluminescence spectra were studied for Cr-, Mn-, Fe-, and Co-doped samples, among which Cr-doped ZnO showed two sharp peaks at 2.97 eV and 3.71 eV, respectively, at the expense of the exciton emission peak of pure ZnO at 3.25 eV. Different magnetoresistance behavior was observed for the samples codoped with n-type carriers. Ferromagnetism was not observed for Cr- to Cu-doped samples down to 3 K. {copyright} 2001 American Institute of Physics.

  4. Strain engineering of magnetic anisotropy: The epitaxial growth of cobalt-manganese-gallium Heusler alloy films on III-V semiconductors

    NASA Astrophysics Data System (ADS)

    Carr, David Michael

    This research is the first step towards manipulating thin film magnetic anisotropy through control of uniform epitaxial strain. Pseudomorphic Co 2MnGa films with thicknesses of 300 A have been grown on several III-V semiconductors to generate coherently-strained epitaxial films. Growth of Co2MnGa films at 200°C both directly on GaAs substrates and on thermodynamically stable Sc0.3Er0.7As interlayers resulted in similar physical and magnetic properties. The epitaxial strain generated an induced perpendicular anisotropy and magnetic stripe domains. This resulted in a reduced in-plane remnant magnetization, high coercivity, and a relatively low saturation field for the out-of-plane magnetization. For higher temperature growths, the interlayer was required to minimize interfacial reactions and maintain the magnetic properties of the films. When the growth temperature on the Sc0.3Er0.7As interlayers was increased from 0 to 400°C, the subsequent films had improved L21 atomic ordering, decreased out-of-plane lattice parameters, and enhanced strain-induced perpendicular anisotropy. Dramatic variations in the magnetic anisotropy were observed for films grown on different III-V semiconductors due to controlled strain-induced perpendicular anisotropy. For Co2MnGa films grown under tension on InP, the magnetization barely saturated out-of-plane with a field of 1.75 Tesla. These films displayed clear in-plane anisotropy and low coercivity switching. For films grown under compression on GaAs, the magnetization easily saturated out-of-plane with a field of a few thousand Oe. These films displayed no in-plane anisotropy in the hysteresis loops and had large coercivities. For comparison, bulk-like unstrained Co2MnGa films were grown on relaxed ErAs interlayers on InAs. These films displayed properties intermediate between films grown on GaAs and InP. Finally, growth of films on GaP resulted in partial relaxation, thereby reducing the induced perpendicular anisotropy and verifying

  5. Bicosomes: Bicelles in Dilute Systems

    PubMed Central

    Rodríguez, Gelen; Soria, Guadalupe; Coll, Elisenda; Rubio, Laia; Barbosa-Barros, Lucyanna; López-Iglesias, Carmen; Planas, Anna M.; Estelrich, Joan; de la Maza, Alfons; López, Olga

    2010-01-01

    Abstract Bicelles are discoidal phospholipid nanostructures at high lipid concentrations. Under dilute conditions, bicelles become larger and adopt a variety of morphologies. This work proposes a strategy to preserve the discoidal morphology of bicelles in environments with high water content. Bicelles were formed in concentrated conditions and subsequently encapsulated in liposomes. Later dilution of these new structures, called bicosomes, demonstrated that lipid vesicles were able to isolate and protect bicelles entrapped inside them from the medium. Characterization of systems before and after dilution by dynamic light-scattering spectroscopy and cryo-transmission electron microscopy showed that free bicelles changed in size and morphology, whereas encapsulated bicelles remained unaltered by the effect of dilution. Free and entrapped bicelles (containing the paramagnetic contrast agent gadodiamide) were injected into rat brain lateral ventricles. Coronal and sagittal visualization was performed by magnetic resonance imaging. Whereas rats injected with free bicelles did not survive the surgery, those injected with bicosomes did, and a hyperintensity effect due to gadodiamide was observed in the cerebrospinal fluid. These results indicate that bicosomes are a good means of preserving the morphology of bicelles under dilution conditions. PMID:20643066

  6. Theory of ferromagnetic (III,Mn)V semiconductors

    NASA Astrophysics Data System (ADS)

    Jungwirth, T.; Sinova, Jairo; Mašek, J.; Kučera, J.; MacDonald, A. H.

    2006-07-01

    The body of research on (III,Mn)V diluted magnetic semiconductors (DMSs) initiated during the 1990s has concentrated on three major fronts: (i) the microscopic origins and fundamental physics of the ferromagnetism that occurs in these systems, (ii) the materials science of growth and defects, and (iii) the development of spintronic devices with new functionalities. This article reviews the current status of the field, concentrating on the first two, more mature research directions. From the fundamental point of view, (Ga,Mn)As and several other (III,Mn)V DMSs are now regarded as textbook examples of a rare class of robust ferromagnets with dilute magnetic moments coupled by delocalized charge carriers. Both local moments and itinerant holes are provided by Mn, which makes the systems particularly favorable for realizing this unusual ordered state. Advances in growth and postgrowth-treatment techniques have played a central role in the field, often pushing the limits of dilute Mn-moment densities and the uniformity and purity of materials far beyond those allowed by equilibrium thermodynamics. In (III,Mn)V compounds, material quality and magnetic properties are intimately connected. This review focuses on the theoretical understanding of the origins of ferromagnetism and basic structural, magnetic, magnetotransport, and magneto-optical characteristics of simple (III,Mn)V epilayers, with the main emphasis on (Ga,Mn)As. Conclusions are arrived at based on an extensive literature covering results of complementary ab initio and effective Hamiltonian computational techniques, and on comparisons between theory and experiment. The applicability of ferromagnetic semiconductors in microelectronic technologies requires increasing Curie temperatures from the current record of 173K in (Ga,Mn)As epilayers to above room temperature. The issue of whether or not this is a realistic expectation for (III,Mn)V DMSs is a central question in the field and motivates many of the analyses

  7. Suppression of Zeeman splitting of the energy levels of exciton-polariton condensates in semiconductor microcavities in an external magnetic field.

    PubMed

    Walker, P; Liew, T C H; Sarkar, D; Durska, M; Love, A P D; Skolnick, M S; Roberts, J S; Shelykh, I A; Kavokin, A V; Krizhanovskii, D N

    2011-06-24

    A key property of equilibrium exciton-polariton condensates in semiconductor microcavities is the suppression of the Zeeman splitting under a magnetic field. By studying magnetophotoluminescence spectra from a GaAs microcavity, we show experimentally that a similar effect occurs in a nonequilibrium polariton condensate arising from polariton parametric scattering. In this case, the quenching of Zeeman splitting is related to a phase synchronization of spin-up and spin-down polarized polariton condensates caused by a nonlinear coupling via the coherent pump state.

  8. Magnetic field effects on the Rabi splitting and radiative decay rates of the exciton-polariton states in a semiconductor microcavity

    NASA Astrophysics Data System (ADS)

    Fenniche, H.; Jaziri, S.; Bennaceur, R.

    1998-12-01

    We study theoretically a particular type of semiconductor microcavity formed by a quantum well embedded inside it and the distributed Bragg reflectors presenting a gradual structure. We apply to this structure a static magnetic field along the growth direction. In the strong coupling regime between the confined exciton and cavity modes, we evaluate the polariton Rabi splitting corresponding to the two lowest lying exciton states: HH1-CB1 and HH2-CB2 as a function of the applied magnetic field. In high magnetic field and for distinct reflectivities, we find that the Rabi splitting magnitude of the HH2-CB2 exciton is close to the fundamental one (HH1-CB1). In the presence of the magnetic field, the polariton Rabi splitting can be obtained even in low reflectivity. The dispersion polariton radiative decay rates related to the two lowest lying exciton states: HH1-CB1 and HH2-CB2 are calculated for different magnetic field values. At k //=0 and in the weak coupling regime, the polariton radiative decay rates are evaluated for both the HH1-CB1 and HH2-CB2 excitons. We show that for the fundamental excitonic state, the magnetic field value which determines the transition from the weak to the strong coupling regime is different from the HH2-CB2 exciton state.

  9. Serial Dilution Simulation Lab

    ERIC Educational Resources Information Center

    Keler, Cynthia; Balutis, Tabitha; Bergen, Kim; Laudenslager, Bryanna; Rubino, Deanna

    2010-01-01

    Serial dilution is often a difficult concept for students to understand. In this short dry lab exercise, students perform serial dilutions using seed beads. This exercise helps students gain skill at performing dilutions without using reagents, bacterial cultures, or viral cultures, while being able to visualize the process.

  10. PREFACE: 19th International Conference on the Application of High Magnetic Fields in Semiconductor Physics and Nanotechnology (HMF-19)

    NASA Astrophysics Data System (ADS)

    Muraki, Koji; Takeyama, Shojiro

    2011-12-01

    This volume contains invited and contributed papers from the 19th International Conference on the Application of High Magnetic Fields in Semiconductor Physics and Nanotechnology (HMF-19) held in Fukuoka, Japan, from 1-6 August 2010. This conference was mainly sponsored by the Tokyo University-'Horiba International fund', which was donated by Dr Masao Horiba, the founder of Horiba Ltd. The scientific program of HMF-19 consisted of 37 invited talks, 24 contributed talks, and 83 posters, which is available from the conference homepage http://www.hmf19.iis.u-tokyo.ac.jp/index.html. Each manuscript submitted for publication in this volume has been independently reviewed. The Editor is very grateful to all the reviewers for their quick responses and helpful reports and to all the authors for their submissions and patience for the delay in the editorial process. Finally, the Editor would like to express his sincere gratitude to all the individuals involved in the conference organization and all the attendees, who made this conference so successful. Koji Muraki Conference photograph Committees Chair Conference chairS Takeyama(ISSP-UT) Conference secretary T Machida (IIS-UT) Program chair K Muraki (NTT) Local organizing chair K Oto (Chiba Univ.) Advisory Committee International Domestic L Brey (ES) T Ando (TIT) Z H Chen (CN) Y Hirayama (Tohoku Univ.) S Das Sarma (US) G Kido (NIMS) L Eaves (GB) N Miura (JP) J P Eisenstein (US) J Nitta (Tohoku Univ.) K Ensslin (CH) T Takamasu (NIMS) J Furdyna (US) G M Gusev (BR) I Kukushkin (RU) Z D Kvon (RU) G Landwehr (DE) J C Maan (NL) A H MacDonald (US) N F Oliveira Jr (BR) A Pinczuk (US) J C Portal (FR) A Sachrajda (CA) M K Sanyal(IN) R Stepniewski(PL) Program Committee Chair: K Muraki(NTT) International Domestic G Bauer (AU) H Ajiki (Osaka Univ.) G Boebinger (US) H Aoki (Hongo, UT) S Ivanov (RU) K Nomura (RIKEN) K von Klitzing (DE) T Okamoto (Hongo, UT) R Nicholas (GB) T Osada (ISSP-UT ) M Potemski (FR) N Studart (BR) U Zeitler (NL

  11. Exploration of Porphyrin-based Semiconductors for Negative Charge Transport Applications Using Synthetic, Spectroscopic, Potentiometric, Magnetic Resonance, and Computational Methods

    NASA Astrophysics Data System (ADS)

    Rawson, Jeffrey Scott

    Organic pi-conjugated materials are emerging as commercially relevant components in electronic applications that include transistors, light-emitting diodes, and solar cells. One requirement common to all of these functions is an aptitude for accepting and transmitting charges. It is generally agreed that the development of organic semiconductors that favor electrons as the majority carriers (n-type) lags behind the advances in hole transporting (p-type) materials. This shortcoming suggests that the design space for n-type materials is not yet well explored, presenting researchers with the opportunity to develop unconventional architectures. In this regard, it is worth noting that discrete molecular materials are demonstrating the potential to usurp the preeminent positions that pi-conjugated polymers have held in these areas of organic electronics research. This dissertation describes how an extraordinary class of molecules, meso-to-meso ethyne-bridged porphyrin arrays, has been bent to these new uses. Chapter one describes vis-NIR spectroscopic and magnetic resonance measurements revealing that these porphyrin arrays possess a remarkable aptitude for the delocalization of negative charge. In fact, the miniscule electron-lattice interactions exhibited in these rigid molecules allow them to host the most vast electron-polarons ever observed in a pi-conjugated material. Chapter two describes the development of an ethyne-bridged porphyrin-isoindigo hybrid chromophore that can take the place of fullerene derivatives in the conventional thin film solar cell architecture. Particularly noteworthy is the key role played by the 5,15-bis(heptafluoropropyl)porphyrin building block in the engineering of a chromophore that, gram for gram, is twice as absorptive as poly(3-hexyl)thiophene, exhibits a lower energy absorption onset than this polymer, and yet possesses a photoexcited singlet state sufficiently energetic to transfer a hole to this polymer. Chapter three describes

  12. Crossover between weak antilocalization and weak localization in a magnetically doped topological insulator.

    PubMed

    Liu, Minhao; Zhang, Jinsong; Chang, Cui-Zu; Zhang, Zuocheng; Feng, Xiao; Li, Kang; He, Ke; Wang, Li-li; Chen, Xi; Dai, Xi; Fang, Zhong; Xue, Qi-Kun; Ma, Xucun; Wang, Yayu

    2012-01-20

    We report transport studies on magnetically doped Bi(2)Se(3) topological insulator ultrathin films grown by molecular beam epitaxy. The magnetotransport behavior exhibits a systematic crossover between weak antilocalization and weak localization with the change of magnetic impurity concentration, temperature, and magnetic field. We show that the localization property is closely related to the magnetization of the sample, and the complex crossover is due to the transformation of Bi(2)Se(3) from a topological insulator to a topologically trivial dilute magnetic semiconductor driven by magnetic impurities. This work demonstrates an effective way to manipulate the quantum transport properties of the topological insulators by breaking time-reversal symmetry.

  13. An electrically detected magnetic resonance study of performance limiting defects in SiC metal oxide semiconductor field effect transistors

    NASA Astrophysics Data System (ADS)

    Cochrane, C. J.; Lenahan, P. M.; Lelis, A. J.

    2011-01-01

    In this study, we utilize electrically detected magnetic resonance (EDMR) techniques and electrical measurements to study defects in SiC based metal oxide semiconductor field effect transistors (MOSFETs). We compare results on a series of SiC MOSFETs prepared with significantly different processing parameters. The EDMR is detected through spin dependent recombination (SDR) in most cases. However, in some devices at a fairly high negative bias, the EDMR likely also involves spin dependent trap-assisted tunneling (SDT) between defects on both sides of the SiC/SiO2 interface. At least three different defects have been detected in the magnetic resonance measurements. The defects observed include two at the SiC/SiO2 interface or on the SiC side of the SiC/SiO2 interface: one is very likely a vacancy center with a distribution which extends into the bulk of the SiC and the other is likely a "dangling bond" defect. A third defect, located on the SiO2 side of the SiC/SiO2 interface, has a spectrum very similar to that previously reported for an oxygen deficient silicon coupled to a hydrogen atom. In nearly all cases, we observe a strong dominating single line EDMR spectrum with an isotropic g≈2.0027. In some samples, this strong central line is accompanied by two pairs of considerably weaker side peaks which we link to hyperfine interactions with nearby Si and C atoms. The pattern is physically reasonable for a silicon vacancy in SiC. We therefore tentatively assign it to a silicon vacancy or silicon vacancy associated defect in the SiC. In one set of devices with very high interface trap density we observe another dominating spectrum with g∥=2.0026 and g⊥=2.0010 with the symmetry axis coincident with the [0001] and nearly the SiC/SiO2 interface normal. We ascribe this EDMR spectrum to a "dangling bond" defect. A third EDMR spectrum shows up in some devices at a fairly large negative gate bias. The phase of this spectrum is quite consistently opposite to that of the

  14. Magnetically modulated laser-induced resistance effect observed in Metal-Oxide-Semiconductor structure of Cr/SiO(2)/Si.

    PubMed

    Xie, Xin; Liu, Shuai; Huang, Meizhen; Wang, Hui

    2015-09-21

    In this study, we report our finding of laser-induced resistance effect in metal-oxide-semiconductor (MOS) structure of Cr/SiO(2)/Si. Under the irradiation of a laser beam, the effect shows a large linear resistance change ratio of 92% with a spatial sensitivity of 0.79 MΩ/mm. In particular, by the application of an external magnetic field perpendicular to the Cr film, the resistance change ratio is increased to 110%. This effect is attributed to the Lorentz force acting on the photo-generated carriers in the inversion layer of MOS structures. The work suggests an approach for the development of new type magnetically modulated photoelectric devices.

  15. Quantum size effects on spin-transfer torque in a double barrier magnetic tunnel junction with a nonmagnetic-metal (semiconductor) spacer

    NASA Astrophysics Data System (ADS)

    Daqiq, Reza; Ghobadi, Nader

    2016-07-01

    We study the quantum size effects of an MgO-based double barrier magnetic tunnel junction with a nonmagnetic-metal (DBMTJ-NM) (semiconductor (DBMTJ-SC)) spacer on the charge current and the spin-transfer torque (STT) components using non-equilibrium Green's function (NEGF) formalism. The results show oscillatory behavior due to the resonant tunneling effect depending on the structure parameters. We find that the charge current and the STT components in the DBMTJ-SC demonstrate the magnitude enhancement in comparison with the DBMTJ-NM. The bias dependence of the STT components in a DBMTJ-NM shows different behavior in comparison with spin valves and conventional MTJs. Therefore, by choosing a specific SC spacer with suitable thickness in a DBMTJ the charge current and the STT components significantly increase so that one can design a device with high STT and faster magnetization switching.

  16. Magnetically modulated laser-induced resistance effect observed in Metal-Oxide-Semiconductor structure of Cr/SiO(2)/Si.

    PubMed

    Xie, Xin; Liu, Shuai; Huang, Meizhen; Wang, Hui

    2015-09-21

    In this study, we report our finding of laser-induced resistance effect in metal-oxide-semiconductor (MOS) structure of Cr/SiO(2)/Si. Under the irradiation of a laser beam, the effect shows a large linear resistance change ratio of 92% with a spatial sensitivity of 0.79 MΩ/mm. In particular, by the application of an external magnetic field perpendicular to the Cr film, the resistance change ratio is increased to 110%. This effect is attributed to the Lorentz force acting on the photo-generated carriers in the inversion layer of MOS structures. The work suggests an approach for the development of new type magnetically modulated photoelectric devices. PMID:26406634

  17. Enhanced photophysical properties of plasmonic magnetic metal-alloyed semiconductor heterostructure nanocrystals: a case study for the Ag@Ni/Zn1-xMgxO system.

    PubMed

    Paul, Sumana; Ghosh, Sirshendu; Saha, Manas; De, S K

    2016-05-14

    Understanding the effect of homovalent cation alloying in wide band gap ZnO and the formation of metal-semiconductor heterostructures is very important for maximisation of the photophysical properties of ZnO. Nearly monodisperse ZnO nanopyramid and Mg alloyed ZnO nanostructures have been successfully synthesized by one pot decomposition of metal stearate by using oleylamine both as activating and capping agent. The solid solubility of Mg(ii) ions in ZnO is limited to ∼30% without phase segregation. An interesting morphology change is found on increasing Mg alloying: from nanopyramids to self-assembled nanoflowers. The morphology change is explained by the oriented attachment process. The introduction of Mg into the ZnO matrix increases the band gap of the materials and also generates new zinc interstitial (Zni) and oxygen vacancy related defects. Plasmonic magnetic Ag@Ni core-shell (Ag as core and Ni as shell) nanocrystals are used as a seed material to synthesize Ag@Ni/Zn1-xMgxO complex heterostructures. Epitaxial growth is established between Ag(111) and ZnO(110) planes in the heterostructure. An epitaxial metal-semiconductor interface is very crucial for complete electron-hole (e-h) separation and enhancement of the exciton lifetime. The alloyed semiconductor-metal heterostructure is observed to be highly photocatalytically active for dye degradation as well as photodetection. Incorporation of magnetic Ni(0) makes the photocatalyst superparamagnetic at room temperature which is found to be helpful for catalyst regeneration. PMID:27113320

  18. Topological Hall effect and Berry phase in magnetic nanostructures.

    PubMed

    Bruno, P; Dugaev, V K; Taillefumier, M

    2004-08-27

    We discuss the anomalous Hall effect in a two-dimensional electron gas subject to a spatially varying magnetization. This topological Hall effect does not require any spin-orbit coupling and arises solely from Berry phase acquired by an electron moving in a smoothly varying magnetization. We propose an experiment with a structure containing 2D electrons or holes of diluted magnetic semiconductor subject to the stray field of a lattice of magnetic nanocylinders. The striking behavior predicted for such a system (of which all relevant parameters are well known) allows one to observe unambiguously the topological Hall effect and to distinguish it from other mechanisms. PMID:15447127

  19. Mesoporous metal and semiconductor nanowires and nanotubes

    NASA Astrophysics Data System (ADS)

    Luo, Hongmei

    self-assembly. As compared to the solid nanowires and nanotubes, those porous wires and tubes show higher coercivities. Such novel nanowires may provide a new platform for high-density information storage applications. We have studied the electrodeposition and magnetic properties of manganese doped zinc oxide films - diluted magnetic semiconductors, and found the materials show both of paramagnetism and ferromagnetism with Curie temperature of 39 K, after calcinations, the samples show paramagnetism and ferromagnetism with high coercivity of above 1 T and Curie temperature of 44 K.

  20. Microfluidic serial dilution ladder.

    PubMed

    Ahrar, Siavash; Hwang, Michelle; Duncan, Philip N; Hui, Elliot E

    2014-01-01

    Serial dilution is a fundamental procedure that is common to a large number of laboratory protocols. Automation of serial dilution is thus a valuable component for lab-on-a-chip systems. While a handful of different microfluidic strategies for serial dilution have been reported, approaches based on continuous flow mixing inherently consume larger amounts of sample volume and chip real estate. We employ valve-driven circulatory mixing to address these issues and also introduce a novel device structure to store each stage of the dilution process. The dilution strategy is based on sequentially mixing the rungs of a ladder structure. We demonstrate a 7-stage series of 1 : 1 dilutions with R(2) equal to 0.995 in an active device area of 1 cm(2).

  1. The mathematics of dilution.

    PubMed

    Chatterjee, Barun Kumar

    2014-04-01

    The major objection to homeopathic medicine is that the doses of medicine prescribed in some cases are too dilute for any active ingredient to be present. The medicines would hence be rendered inactive, necessitating novel explanations for the action. A further examination of dilution in the light of the Langmuir equation shows that homeopathic medicines may not be as dilute as a simplistic application of Avogadro's Principle suggests, due to surface effects.

  2. Magnetic-Polaron-Induced Enhancement of Surface Raman Scattering

    PubMed Central

    Shao, Qi; Liao, Fan; Ruotolo, Antonio

    2016-01-01

    The studies of the effects of magnetic field on surface enhanced Raman scattering (SERS) have been so far limited to the case of ferromagnetic/noble-metal, core/shell nano-particles, where the influence was always found to be negative. In this work, we investigate the influence of magnetic field on a diluted magnetic semiconductor/metal SERS system. Guided by three dimensional finite-difference time-domain simulations, a high efficient SERS substrate was obtained by diluting Mn into Au-capped ZnO, which results in an increase of the dielectric constant and, therefore, an enhancement of Raman signals. More remarkably, an increase of intensities as well as a reduction of the relative standard deviation (RSD) of Raman signals have been observed as a function of the external magnetic strength. We ascribe these positive influences to magnetic-field induced nucleation of bound magnetic polarons in the Mn doped ZnO. The combination of diluted magnetic semiconductors and SERS may open a new avenue for future magneto-optical applications. PMID:26754049

  3. Preparation and characterization of a novel hybrid magnetic semiconductor containing rare, one-dimensional mixed-iodide/chloride anion of lead(II)

    SciTech Connect

    Fan Leqing Wu Jihuai Huang Yunfang

    2007-12-15

    A new hybrid inorganic-organic magnetic semiconductor [Ni(bipy){sub 3}Pb{sub 2}I{sub 4.84}Cl{sub 1.16}.DMF]{sub n} (bipy=2,2'-bipyridine) containing novel one-dimensional mixed-halide anion of lead(II) was synthesized by reactions of PbI{sub 2}, NaI, NiCl{sub 2} and bipy in DMF solution, and structurally characterized by single-crystal X-ray diffraction. It crystallizes in the space group C2/c with a=29.260(8) A, b=15.602(4) A, c=23.695(6) A, {beta}=126.815({sup o}), Z=8, V=8660(4) A{sup 3} and consists of a magnetic cation [Ni(bipy){sub 3}]{sup 2+} in addition to one-dimensional mixed-halide anion, which is built up of face-sharing [PbX{sub 6}] octahedra. Of the seven crystallographically independent halide sites in this anion, one and five are occupied by Cl and I, respectively, the remaining one has mixed-iodide and -chloride occupancy. The title yellow compound has an optical bandgap of 2.59 eV, and the variable-temperature magnetic susceptibility measurement indicates paramagnetic behavior. - Graphical abstract: Based upon magnetic metal-organic complex as template, a novel one-dimensional haloplumbate containing mixed-halide anion has been successfully synthesized. Its structural characteristics, optical bandgap, magnetic and thermal properties are reported.

  4. A hybrid magnetic/complementary metal oxide semiconductor three-context memory bit cell for non-volatile circuit design

    NASA Astrophysics Data System (ADS)

    Jovanović, B.; Brum, R. M.; Torres, L.

    2014-04-01

    After decades of continued scaling to the beat of Moore's law, it now appears that conventional silicon based devices are approaching their physical limits. In today's deep-submicron nodes, a number of short-channel and quantum effects are emerging that affect the manufacturing process, as well as, the functionality of the microelectronic systems-on-chip. Spintronics devices that exploit both the intrinsic spin of the electron and its associated magnetic moment, in addition to its fundamental electronic charge, are promising solutions to circumvent these scaling threats. Being compatible with the CMOS technology, such devices offer a promising synergy of radiation immunity, infinite endurance, non-volatility, increased density, etc. In this paper, we present a hybrid (magnetic/CMOS) cell that is able to store and process data both electrically and magnetically. The cell is based on perpendicular spin-transfer torque magnetic tunnel junctions (STT-MTJs) and is suitable for use in magnetic random access memories and reprogrammable computing (non-volatile registers, processor cache memories, magnetic field-programmable gate arrays, etc). To demonstrate the potential our hybrid cell, we physically implemented a small hybrid memory block using 45 nm × 45 nm round MTJs for the magnetic part and 28 nm fully depleted silicon on insulator (FD-SOI) technology for the CMOS part. We also report the cells measured performances in terms of area, robustness, read/write speed and energy consumption.

  5. A hybrid magnetic/complementary metal oxide semiconductor three-context memory bit cell for non-volatile circuit design

    SciTech Connect

    Jovanović, B. E-mail: lionel.torres@lirmm.fr; Brum, R. M.; Torres, L.

    2014-04-07

    After decades of continued scaling to the beat of Moore's law, it now appears that conventional silicon based devices are approaching their physical limits. In today's deep-submicron nodes, a number of short-channel and quantum effects are emerging that affect the manufacturing process, as well as, the functionality of the microelectronic systems-on-chip. Spintronics devices that exploit both the intrinsic spin of the electron and its associated magnetic moment, in addition to its fundamental electronic charge, are promising solutions to circumvent these scaling threats. Being compatible with the CMOS technology, such devices offer a promising synergy of radiation immunity, infinite endurance, non-volatility, increased density, etc. In this paper, we present a hybrid (magnetic/CMOS) cell that is able to store and process data both electrically and magnetically. The cell is based on perpendicular spin-transfer torque magnetic tunnel junctions (STT-MTJs) and is suitable for use in magnetic random access memories and reprogrammable computing (non-volatile registers, processor cache memories, magnetic field-programmable gate arrays, etc). To demonstrate the potential our hybrid cell, we physically implemented a small hybrid memory block using 45 nm × 45 nm round MTJs for the magnetic part and 28 nm fully depleted silicon on insulator (FD-SOI) technology for the CMOS part. We also report the cells measured performances in terms of area, robustness, read/write speed and energy consumption.

  6. Semiconductor sensors

    NASA Technical Reports Server (NTRS)

    Gatos, Harry C. (Inventor); Lagowski, Jacek (Inventor)

    1977-01-01

    A semiconductor sensor adapted to detect with a high degree of sensitivity small magnitudes of a mechanical force, presence of traces of a gas or light. The sensor includes a high energy gap (i.e., .about. 1.0 electron volts) semiconductor wafer. Mechanical force is measured by employing a non-centrosymmetric material for the semiconductor. Distortion of the semiconductor by the force creates a contact potential difference (cpd) at the semiconductor surface, and this cpd is determined to give a measure of the force. When such a semiconductor is subjected to illumination with an energy less than the energy gap of the semiconductors, such illumination also creates a cpd at the surface. Detection of this cpd is employed to sense the illumination itself or, in a variation of the system, to detect a gas. When either a gas or light is to be detected and a crystal of a non-centrosymmetric material is employed, the presence of gas or light, in appropriate circumstances, results in a strain within the crystal which distorts the same and the distortion provides a mechanism for qualitative and quantitative evaluation of the gas or the light, as the case may be.

  7. Enhanced magnetic and photocatalytic properties of Bi2Fe4O9 semiconductor with large exposed (001) surface

    NASA Astrophysics Data System (ADS)

    Wu, Tianli; Liu, Lin; Pi, Mingyu; Zhang, Dingke; Chen, Shijian

    2016-07-01

    Magnetic photocatalysts have attracted an increasing attention for photodegradation of organic containments and easy recycling. In this work, magnetic, single-crystalline Bi2Fe4O9 samples have been synthesized through a facile hydrothermal process and the morphologies were modulated by adjusting the Bi3+/Fe3+ precursor molar ratio and NaOH concentration. The most well crystalline Bi2Fe4O9 nanoplates were formed by self-assembled anisotropic growth along the (001) plane, with large exposed (001) surface. The Bi2Fe4O9 nanoplates exhibit excellent photocatalytic degradation of rhodamine b (RhB) under visible light irradiation with the assistant of a small amount of H2O2. The excellent photocatalytic performance of the Bi2Fe4O9 nanoplates was ascribed to the lower recombination rate of the photogenerated electrons and holes on the (001) surface, which was confirmed by detecting the hydroxyl radicals. In addition, Bi2Fe4O9 samples exhibit morphology-dependent magnetic properties. The mechanisms of morphology-dependent magnetic, photoadsorbing and photocatalytic properties of Bi2Fe4O9 crystals are discussed systematically. The magnetic Bi2Fe4O9 photocatalyst allows efficient utilization of solar energy and possible catalyst recovery via magnetically-enhanced gravity separation.

  8. Trend of tunnel magnetoresistance and variation in threshold voltage for keeping data load robustness of metal–oxide–semiconductor/magnetic tunnel junction hybrid latches

    SciTech Connect

    Ohsawa, T.; Ikeda, S.; Hanyu, T.; Ohno, H.; Endoh, T.

    2014-05-07

    The robustness of data load of metal–oxide–semiconductor/magnetic tunnel junction (MOS/MTJ) hybrid latches at power-on is examined by using Monte Carlo simulation with the variations in magnetoresistances for MTJs and in threshold voltages for MOSFETs involved in 90 nm technology node. Three differential pair type spin-transfer-torque-magnetic random access memory cells (4T2MTJ, 6T2MTJ, and 8T2MTJ) are compared for their successful data load at power-on. It is found that the 4T2MTJ cell has the largest pass area in the shmoo plot in TMR ratio (tunnel magnetoresistance ratio) and V{sub dd} in which a whole 256 kb cell array can be powered-on successfully. The minimum TMR ratio for the 4T2MTJ in 0.9 V < V{sub dd} < 1.9 V is 140%, while the 6T2MTJ and the 8T2MTJ cells require TMR ratio larger than 170%.

  9. Mesoporous silica beads embedded with semiconductor quantum dots and iron oxide nanocrystals: dual-function microcarriers for optical encoding and magnetic separation.

    PubMed

    Sathe, Tushar R; Agrawal, Amit; Nie, Shuming

    2006-08-15

    Mesoporous beads are promising materials for embedding functional nanoparticles because of their nanometer-sized pores and large surface areas. Here we report the development of silica microbeads embedded with both semiconductor quantum dots (QD) and iron oxide (Fe3O4) nanocrystals as a new class of dual-function carriers for optical encoding and magnetic separation. The embedding (doping) process is carried out by either simultaneous or sequential addition of quantum dots and iron oxide (Fe3O4) nanocrystals in solution. The doping process is fast and quantitative, but the incorporated iron oxide strongly attenuates the signal intensity of QD fluorescence. We find that this attenuation is not due to conventional fluorescence quenching but is caused by the broad optical absorption spectrum of mixed-valence Fe3O4. For improved biocompatibility and reduced nonspecific binding, the encoded beads are further coated with amphiphilic polymers such as octylamine poly(acrylic acid). The results indicate that the polymer-coated beads are well suited for target capturing and enrichment, yielding magnetic separation efficiencies higher than 99%. By combining the multiplexing capability of QDs with the superparamagnetic properties of iron oxide nanocrystals, this class of encoded beads is expected to find broad applications in high-throughput and multiplexed biomolecular assays. PMID:16906704

  10. Monoclinic Cc-phase stabilization in magnetically diluted lead free Na1/2Bi1/2TiO3—Evolution of spin glass like behavior with enhanced ferroelectric and dielectric properties

    NASA Astrophysics Data System (ADS)

    Thangavelu, Karthik; Asthana, Saket

    2015-09-01

    The effect of magnetic cation substitution on the phase stabilization, ferroelectric, dielectric and magnetic properties of a lead free Na0.5Bi0.5TiO3 (NBT) system prepared by O2 atmosphere solid state sintering were studied extensively. Cobalt (Co) was chosen as the magnetic cation to substitute at the Ti-site of NBT with optimized 2.5 mol%. Rietveld analysis of x-ray diffraction data favours the monoclinic Cc phase stabilization strongly rather than the parent R3c phase. FE-SEM micrograph supports the single phase characteristics without phase segregation at the grain boundaries. The stabilized Cc space group was explained based on the collective local distortion effects due to spin-orbit stabilization at Co3+ and Co2+ functional centres. The phonon mode changes as observed in the TiO6 octahedral modes also support the Cc phase stabilization. The major Co3+-ion presence was revealed from corresponding crystal field transitions observed through solid state diffuse reflectance spectroscopy. The enhanced spontaneous polarization (Ps) from ≅38 μC cm-2 to 45 μC cm-2 could be due to the easy rotation of polarization vector along the {(1\\bar{1}0)}{{pc}} in Cc phase. An increase in static dielectric response (ɛ) from ɛ ≅ 42 to 60 along with enhanced diffusivity from γ ≅ 1.53 to 1.75 was observed. Magneto-thermal irreversibility and their magnetic field dependent ZFC/FC curves suggest the possibility of a spin glass like behaviour below 50 K. The monoclinic Cc phase stabilization as confirmed from structural studies was well correlated with the observed ferroic properties in magnetically diluted NBT.

  11. Resonantly enhanced spin-lattice relaxation of Mn2 + ions in diluted magnetic (Zn,Mn)Se/(Zn,Be)Se quantum wells

    NASA Astrophysics Data System (ADS)

    Debus, J.; Ivanov, V. Yu.; Ryabchenko, S. M.; Yakovlev, D. R.; Maksimov, A. A.; Semenov, Yu. G.; Braukmann, D.; Rautert, J.; Löw, U.; Godlewski, M.; Waag, A.; Bayer, M.

    2016-05-01

    The dynamics of spin-lattice relaxation in the magnetic Mn2 + ion system of (Zn,Mn)Se/(Zn,Be)Se quantum-well structures are studied using optical methods. Pronounced cusps are found in the giant Zeeman shift of the quantum-well exciton photoluminescence at specific magnetic fields below 10 T, when the Mn spin system is heated by photogenerated carriers. The spin-lattice relaxation time of the Mn ions is resonantly accelerated at the cusp magnetic fields. Our theoretical analysis demonstrates that a cusp occurs at a spin-level mixing of single Mn2 + ions and a quick-relaxing cluster of nearest-neighbor Mn ions, which can be described as intrinsic cross-relaxation resonance within the Mn spin system.

  12. Negative magnetophoresis in diluted ferrofluid flow.

    PubMed

    Hejazian, Majid; Nguyen, Nam-Trung

    2015-07-21

    We report magnetic manipulation of non-magnetic particles suspended in diluted ferrofluid. Diamagnetic particles were introduced into a circular chamber to study the extent of their deflection under the effect of a non-uniform magnetic field of a permanent magnet. Since ferrofluid is a paramagnetic medium, it also experiences a bulk magnetic force that in turn induces a secondary flow opposing the main hydrodynamic flow. Sheath flow rate, particle size, and magnetic field strength were varied to examine this complex behaviour. The combined effect of negative magnetophoresis and magnetically induced secondary flow leads to various operation regimes, which can potentially find applications in separation, trapping and mixing of diamagnetic particles such as cells in a microfluidic system. PMID:26054840

  13. Separating hyperfine from spin-orbit interactions in organic semiconductors by multi-octave magnetic resonance using coplanar waveguide microresonators

    NASA Astrophysics Data System (ADS)

    Joshi, G.; Miller, R.; Ogden, L.; Kavand, M.; Jamali, S.; Ambal, K.; Venkatesh, S.; Schurig, D.; Malissa, H.; Lupton, J. M.; Boehme, C.

    2016-09-01

    Separating the influence of hyperfine from spin-orbit interactions in spin-dependent carrier recombination and dissociation processes necessitates magnetic resonance spectroscopy over a wide range of frequencies. We have designed compact and versatile coplanar waveguide resonators for continuous-wave electrically detected magnetic resonance and tested these on organic light-emitting diodes. By exploiting both the fundamental and higher-harmonic modes of the resonators, we cover almost five octaves in resonance frequency within a single setup. The measurements with a common π-conjugated polymer as the active material reveal small but non-negligible effects of spin-orbit interactions, which give rise to a broadening of the magnetic resonance spectrum with increasing frequency.

  14. Magnetic Anisotropy and Magnetization Switching in Ferromagnetic GaMnAs

    NASA Astrophysics Data System (ADS)

    Limmer, W.; Daeubler, J.; Glunk, M.; Hummel, T.; Schoch, W.; Schwaiger, S.; Tabor, M.; Sauer, R.

    Characteristic features of diluted ferromagnetic semiconductors such as the anisotropic magnetoresistance or the spin polarization of charge carriers are intimately connected with a macroscopic magnetization. Since the orientation of the magnetization is controlled by magnetic anisotropy (MA), a detailed knowledge of this anisotropy is indispensable for the design of novel spintronic devices. In this article, angle-dependent magnetotransport is demonstrated to be an excellent tool for probing MA as an alternative to the standard ferromagnetic-resonance method. Moreover, its ability to trace the motion of the magnetization vector in a variable external magnetic field makes it ideally suitable for studying magnetization switching, a potential basic effect in future logical devices. The MA of a series of differently strained GaMnAs samples is analyzed by means of model calculations in a single-domain picture based on a series expansion of the resistivity tensor and a numerical minimization of the free enthalpy.

  15. Field-effect modulation of anomalous Hall effect in diluted ferromagnetic topological insulator epitaxial films

    NASA Astrophysics Data System (ADS)

    Chang, CuiZu; Liu, MinHao; Zhang, ZuoCheng; Wang, YaYu; He, Ke; Xue, QiKun

    2016-03-01

    High quality chromium (Cr) doped three-dimensional topological insulator (TI) Sb2Te3 films are grown via molecular beam epitaxy on heat-treated insulating SrTiO3 (111) substrates. We report that the Dirac surface states are insensitive to Cr doping, and a perfect robust long-range ferromagnetic order is unveiled in epitaxial Sb2- x Cr x Te3 films. The anomalous Hall effect is modulated by applying a bottom gate, contrary to the ferromagnetism in conventional diluted magnetic semiconductors (DMSs), here the coercivity field is not significantly changed with decreasing carrier density. Carrier-independent ferromagnetism heralds Sb2- x Cr x Te3 films as the base candidate TI material to realize the quantum anomalous Hall (QAH) effect. These results also indicate the potential of controlling anomalous Hall voltage in future TI-based magneto-electronics and spintronics.

  16. Size-dependent properties of semiconductor nanostructures

    NASA Astrophysics Data System (ADS)

    Kwak, Hyun Wook

    Doping is crucial to many potential applications of nanometer-sized semiconductors. Since their properties are strongly affected by both doping and quantum size effect, it is important to understand how dopants will influence its media under strong quantum confinement. In this dissertation, we will discuss the role of quantum confinement in the properties of nanometer-sized semiconductors doped with impurities. It is well-known that electronic and optical properties of nanometer-sized semiconductors can vary with size. We present size-dependent properties of lithium doped silicon and zinc oxide nanocrystals as examples. With the help of first-principles methods based on real space approach, we find that not only the size itself but also the chemical nature of the impurity is important to determine the properties of nanometer-sized semiconductors. We will also discuss size-induced magnetism in semiconductor nanostructures doped with non-magnetic impurities. From recent studies, it has been proposed that magnetic semiconductors can be designed by using non-magnetic defects, e.g., through the introduction of an extrinsic impurity atom that does not exhibit magnetism by itself. We examine this idea with silicon and zinc oxide nanostructures doped with impurities. We find that quantum size effect may induce magnetism in doped nanostructures. The evidence of the size-dependent magnetic properties offers a new perspective for the design of semiconductor-based spintronic materials.

  17. Investigation of local structural environments and room-temperature ferromagnetism in (Fe,Cu)-codoped In2O3 diluted magnetic oxide films.

    PubMed

    An, Yukai; Xing, Yaya; Pan, Fei; Wu, Zhonghua; Liu, Jiwen

    2016-05-11

    The local structural, optical, magnetic and transport properties of (In0.95-xFexCu0.05)2O3 (0.06 ≤ x ≤ 0.20) films deposited by RF-magnetron sputtering have been systemically studied by different experimental techniques. Detailed structural analyses using XRD, XPS, EXAFS and full multiple-scattering ab initio theoretical calculations of Fe K-edge XANES show that the (In0.95-xFexCu0.05)2O3 films have the same cubic bixbyite structure as pure In2O3. The doped Fe ions exist at both +2 and +3 oxidation states, substituting for the In(3+) sites in the In2O3 lattice and forming a FeIn + 2VO complex with the O vacancy in the first coordination shell of Fe. However, the co-doped Cu atoms are not incorporated into the In2O3 lattice and form the Cu metal clusters due to high ionization energy. UV-Vis measurements show that the optical band gap Eg decreases monotonically with the increase of Fe concentration, implying an increasing s-pd exchange interaction in the films. All the films display intrinsic room-temperature (RT) ferromagnetism and the saturated magnetization (Ms) increases monotonically with Fe doping. The temperature dependence of the resistivity data suggests the conduction mechanism of Mott variable-range hopping (VRH) at low temperature, confirming that the carriers are localized. It can be concluded that the observed RT ferromagnetism in the films originates from the overlapping of polarons mediated by oxygen vacancies based on the bound magnetic polaron (BMP) model. The variation of the localization effect of carriers with Fe doping can obviously adjust the magnetic exchange interaction in the (In0.95-xFexCu0.05)2O3 films. PMID:27139011

  18. Investigation of local structural environments and room-temperature ferromagnetism in (Fe,Cu)-codoped In2O3 diluted magnetic oxide films.

    PubMed

    An, Yukai; Xing, Yaya; Pan, Fei; Wu, Zhonghua; Liu, Jiwen

    2016-05-11

    The local structural, optical, magnetic and transport properties of (In0.95-xFexCu0.05)2O3 (0.06 ≤ x ≤ 0.20) films deposited by RF-magnetron sputtering have been systemically studied by different experimental techniques. Detailed structural analyses using XRD, XPS, EXAFS and full multiple-scattering ab initio theoretical calculations of Fe K-edge XANES show that the (In0.95-xFexCu0.05)2O3 films have the same cubic bixbyite structure as pure In2O3. The doped Fe ions exist at both +2 and +3 oxidation states, substituting for the In(3+) sites in the In2O3 lattice and forming a FeIn + 2VO complex with the O vacancy in the first coordination shell of Fe. However, the co-doped Cu atoms are not incorporated into the In2O3 lattice and form the Cu metal clusters due to high ionization energy. UV-Vis measurements show that the optical band gap Eg decreases monotonically with the increase of Fe concentration, implying an increasing s-pd exchange interaction in the films. All the films display intrinsic room-temperature (RT) ferromagnetism and the saturated magnetization (Ms) increases monotonically with Fe doping. The temperature dependence of the resistivity data suggests the conduction mechanism of Mott variable-range hopping (VRH) at low temperature, confirming that the carriers are localized. It can be concluded that the observed RT ferromagnetism in the films originates from the overlapping of polarons mediated by oxygen vacancies based on the bound magnetic polaron (BMP) model. The variation of the localization effect of carriers with Fe doping can obviously adjust the magnetic exchange interaction in the (In0.95-xFexCu0.05)2O3 films.

  19. Low temperature, high magnetic field investigations of the nature of magnetism in the molecular semiconductor β- cobalt phthalocyanine (C32H16CoN8)

    NASA Astrophysics Data System (ADS)

    Wang (王正君), Zhengjun; Lee, M.; Choi, E. S.; Poston, J.; Seehra, M. S.

    2016-06-01

    Results from detailed investigations of the magnetic properties of a powder sample of β-CoPc for the temperatures T=0.4 K to 300 K and in magnetic fields H up to 90 kOe are reported. X-ray diffraction confirmed the β-phase and scanning electron microscopy showed plate-like morphology of the sample. For T>3 K, the data of magnetic susceptibility χ vs. T fit the Curie-Weiss (CW) law yielding θ=-2.5 K, μ=2.16 μB per Co2+ and g=2.49 for spin S=1/2 of the low spin-state of Co2+. However for T<3 K, the χ vs. T data deviates from the CW law yielding a peak in χ at Tmax=1.9 K. It is shown that the χ vs. T data from 0.4 K to 300 K fits well with the predictions of the Bonner-Fisher (BF) model for S=1/2 Heisenberg linear chain antiferromagnet with the Co2+-Co2+ exchange J/kB = -1.5 K (Ĥ=-2J Σ Si•Si+1). The data of magnetization M vs. H at T=1 K agrees with the predictions of the BF model with J/kB=-1.5 K, yielding saturation magnetization MS=12.16 emu/g above 60 kOe corresponding to complete alignment of the spins.

  20. Fabrication and characterization of magnetically tunable metal-semiconductor schottky diode using barium hexaferrite thin film on gold

    NASA Astrophysics Data System (ADS)

    Kaur, Jotinder; Sharma, Vinay; Sharma, Vipul; Veerakumar, V.; Kuanr, Bijoy K.

    2016-05-01

    Barium Hexaferrite (BaM) is an extensively studied magnetic material due to its potential device application. In this paper, we study Schottky junction diodes fabricated using gold and BaM and demonstrate the function of a spintronic device. Gold (50 nm)/silicon substrate was used to grow the BaM thin films (100-150 nm) using pulsed laser deposition. I-V characteristics were measured on the Au/BaM structure sweeping the voltage from ±5 volts. The forward and reverse bias current-voltage curves show diode like rectifying characteristics. The threshold voltage decreases while the output current increases with increase in the applied external magnetic field showing that the I-V characteristics of the BaM based Schottky junction diodes can be tuned by external magnetic field. It is also demonstrated that, the fabricated Schottky diode can be used as a half-wave rectifier, which could operate at high frequencies in the range of 1 MHz compared to the regular p-n junction diodes, which rectify below 10 kHz. In addition, it is found that above 1 MHz, Au/BaM diode can work as a rectifier as well as a capacitor filter, making the average (dc) voltage much larger.

  1. Helium dilution refrigeration system

    DOEpatents

    Roach, Patrick R.; Gray, Kenneth E.

    1988-01-01

    A helium dilution refrigeration system operable over a limited time period, and recyclable for a next period of operation. The refrigeration system is compact with a self-contained pumping system and heaters for operation of the system. A mixing chamber contains .sup.3 He and .sup.4 He liquids which are precooled by a coupled container containing .sup.3 He liquid, enabling the phase separation of a .sup.3 He rich liquid phase from a dilute .sup.3 He-.sup.4 He liquid phase which leads to the final stage of a dilution cooling process for obtaining low temperatures. The mixing chamber and a still are coupled by a fluid line and are maintained at substantially the same level with the still cross sectional area being smaller than that of the mixing chamber. This configuration provides maximum cooling power and efficiency by the cooling period ending when the .sup.3 He liquid is depleted from the mixing chamber with the mixing chamber nearly empty of liquid helium, thus avoiding unnecessary and inefficient cooling of a large amount of the dilute .sup.3 He-.sup.4 He liquid phase.

  2. Helium dilution refrigeration system

    DOEpatents

    Roach, P.R.; Gray, K.E.

    1988-09-13

    A helium dilution refrigeration system operable over a limited time period, and recyclable for a next period of operation is disclosed. The refrigeration system is compact with a self-contained pumping system and heaters for operation of the system. A mixing chamber contains [sup 3]He and [sup 4]He liquids which are precooled by a coupled container containing [sup 3]He liquid, enabling the phase separation of a [sup 3]He rich liquid phase from a dilute [sup 3]He-[sup 4]He liquid phase which leads to the final stage of a dilution cooling process for obtaining low temperatures. The mixing chamber and a still are coupled by a fluid line and are maintained at substantially the same level with the still cross sectional area being smaller than that of the mixing chamber. This configuration provides maximum cooling power and efficiency by the cooling period ending when the [sup 3]He liquid is depleted from the mixing chamber with the mixing chamber nearly empty of liquid helium, thus avoiding unnecessary and inefficient cooling of a large amount of the dilute [sup 3]He-[sup 4]He liquid phase. 2 figs.

  3. Dilution, Concentration, and Flotation

    ERIC Educational Resources Information Center

    Liang, Ling; Schmuckler, Joseph S.

    2004-01-01

    As both classroom teaching practice and literature show, many students have difficulties learning science concepts such as density. Here are some investigations that identify the relationship between density and floating through experimenting with successive dilution of a liquid, or the systematic change of concentration of a saltwater solution.…

  4. Dilute Magnetic and Electronic Properties of MnxSc(1-x)N/ScN(001)/MgO(001) Films Grown by Molecular Beam Epitaxy

    NASA Astrophysics Data System (ADS)

    Constantin, Costel; Wang, Kangkang; Chinchore, Abhijit; Smith, Arthur; Chia, Han-Jong; Markert, John

    2009-03-01

    In this study, we report the magnetic and electronic properties of MnxSc(1-x)N films grown by molecular beam epitaxy. Recently, theoretical calculations predicted a Curie temperature above 350 K for ScN films with up to 20% Mn impurity concentrations[1]. The magnetic hysteresis data suggests ferromagnetic behavior for Mn0.03Sc0.97N and Mn0.15Sc0.85N films with Curie temperatures of 383 K and 361 K, respectively. Furthermore, the measured electron concentrations for the Mn0.03Sc0.97N and Mn0.15Sc0.85N films are 6.51x10^19 cm-3 and 6.17x10^19 cm-3, respectively. These measured carrier concentration agree well with the prediction of Herwadkar et al. that ferromagnetism above room temperature in MnxSc(1-x)N should be possible by keeping the electron concentration below 10^20 cm-3. This work is supported by: Seton Hall: University Research Council; Ohio University: DOE-BES Grant No. DE-FG02-06ER46317 and NSF Grant No. 0730257; and UT Austin: NSF Grant Nos. DMR-0605828 and DGE-0549417, Welch Foundation Grant No. F-1191. [1] A. Herwadkar (et al.), Phys. Rev. B 77, 134433 (2008).

  5. Magnetic dilution of the iron sublattice in CoFe{sub 2-x}Sc{sub x}O{sub 4} (0{<=}x{<=}1)

    SciTech Connect

    Lefevre, C.; Roulland, F.; Viart, N.; Greneche, J.M.; Pourroy, G.

    2010-11-15

    Substitution of Fe for Sc in CoFe{sub 2}O{sub 4} spinel structure is presented. All CoFe{sub 2-x}Sc{sub x}O{sub 4} compounds crystallize in the spinel type structure (space group Fd3-bar m). By using X-ray diffraction studies, magnetic measurements and in-field {sup 57}Fe Moessbauer spectrometry, the limit of substitution has been determined to be equal to x=0.56. An increase in the cell parameter and the strains and a decrease in the apparent crystallites size are observed. For x>0.3, a partial oxidation of cobalt is evidenced and Co{sup 3+} is stabilized in the structure. A ferromagnetic behavior has been observed for all investigated compounds. As x increases, the Curie temperature and the hyperfine fields decrease. Following the Stephenson model, the diminution of T{sub C} is ascribed to a decrease of the main J{sub AB} interaction. -- Graphical abstract: Evolution of the cell parameters, the magnetic properties and the Moessbauer spectra in CoFe{sub 2-r}Sc{sub r}O{sub 4} (0{<=}r{<=}1). Display Omitted

  6. Magnetism, Magnetic Materials and their Applications III - Proceedings of the III Latin American Workshop

    NASA Astrophysics Data System (ADS)

    Leccabue, F.; Sagredo, V.

    1996-08-01

    The Table of Contents for the full book PDF is as follows: * Preface * Section I: Fundamental, Techniques and Materials * Magnetism in finite size Ising aggregates * Magnetic anisotropy in thin films * Magnetocrystalline anisotropy in rare earth intermetallics * Ferromagnetism vs Kondo effect in normal and superconducting CeTyX4-y * Magnetic phase transition and magnetocrystalline anisotropy of rare-earth transition-metal alloys * Giant magnetoresistance and related effects in multilayer and granular magnetic materials for practical applications * Magnetic properties of dilute PdMn alloys * TbFe amorphous thin films. Structural, magnetic and magnetoelastic studies * Nanophase exchange coupled alloys with enhanced hard magnetic properties * Exchange interactions in ferrimagnetic rare earth-transition metal multilayers * Superparamagnetic relaxation in interacting γ-Fe2O3 particles * Magnetic circular X-ray dichroism * Non-frustrated domains in Ising lattices with competing interactions * Thermomagnetic and X-ray diffraction analysis of Nd3Fe29-xTix and (Nd1-xYx)3Fe27.3Ti1.7 alloys * Electron paramagnetic resonance above the ordering temperature in La1-xCaxMnO3+δ * Spin-polarisation at Cr/Fe and Mn/Fe interfaces * Interplay of segregation, phase separation and magnetism in cobalt-copper slabs * High temperature behaviour of amorphous and nanocrystalline soft magnetic materials * Preparation of magnetic oxide thin films * Magnetic interactions in enhanced-remanence permanent magnets * Section II: Poster Session : Fundamental, Techniques and Materials * Magnetic properties in inorganic materials * Thermoreflactance measurements on Cd1-xCoxSe magnetic semiconductors * Analytical solutions of the NCA equations for the Coqblin-Schrieffer model in the zero temperature limit * Magneto-structural and spectroscopic investigation of MnxCd1-xIn2Te4 solid solutions * Magnetic after-effect processes in barium hexagonal ferrites * Electron paramagnetic resonance in PtFe alloys

  7. Coupling between magnetic and optical properties of GaN:TM (TM: V, Cr, Mn, Fe, Co, Ni): First-principle study with LDA-SIC approximation

    NASA Astrophysics Data System (ADS)

    Salmani, El mehdi; Mounkachi, Omar; Ez-Zahraouy, Hamid; Benyoussef, Abdelilah; Hamedoun, Mohammed; Hlil, El kebir

    2013-11-01

    Electronic structure, magnetic and optical properties of GaN:TM (TM: V, Cr, Mn, Fe, Co, Ni), based dilute magnetic semiconductors (DMS), are investigated using first-principles calculations. The energy difference between the ferromagnetic and disorder local moment states has been evaluated. Moreover, the optical absorption spectra obtained by ab-initio calculations confirm the ferromagnetic stability based on the charge state of magnetic impurities. Our results show that the ferromagnetic state is stable when TM introduce simultaneously magnetic moment and intrinsic carriers in (Ga, TM)N. Some studied ferromagnetic DMS exhibit half-metallic behavior, which is suitable for spintronics applications.

  8. Dispersion serial dilution methods using the gradient diluter device.

    PubMed

    Walling, Leslie; Schulz, Craig; Johnson, Michael

    2012-12-01

    A solute aspirated into a prefilled tube of diluent undergoes a dilution effect known as dispersion. Traditionally the effects of dispersion have been considered a negative consequence of using liquid-filled fixed-tip liquid handlers. We present a novel device and technique that utilizes the effects of dispersion to the benefit of making dilutions. The device known as the Gradient Diluter extends the dilution range of practical serial dilutions to six orders of magnitude in final volumes as low as 10 μL. Presented are the device, dispersion methods, and validation tests using fluorescence detection of sulforhodamine and the high-performance liquid chromatography/ultraviolet detection of furosemide. In addition, a T-cell inhibition assay of a relevant downstream protein is used to demonstrate IC(50) curves made with the Gradient Diluter compare favorably with those generated by hand.

  9. Field-induced spin-flop in antiferromagnetic semiconductors with commensurate and incommensurate magnetic structures: Li2FeGeS4 (LIGS) and Li2FeSnS4 (LITS).

    PubMed

    Brant, Jacilynn A; dela Cruz, Clarina; Yao, Jinlei; Douvalis, Alexios P; Bakas, Thomas; Sorescu, Monica; Aitken, Jennifer A

    2014-12-01

    Li2FeGeS4 (LIGS) and Li2FeSnS4 (LITS), which are among the first magnetic semiconductors with the wurtz-kesterite structure, exhibit antiferromagnetism with TN ≈ 6 and 4 K, respectively. Both compounds undergo a conventional metamagnetic transition that is accompanied by a hysteresis; a reversible spin-flop transition is dominant. On the basis of constant-wavelength neutron powder diffraction data, we propose that LIGS and LITS exhibit collinear magnetic structures that are commensurate and incommensurate with propagation vectors km = [1/2, 1/2, 1/2] and [0, 0, 0.546(1)], respectively. The two compounds exhibit similar magnetic phase diagrams, as the critical fields are temperature-dependent. The nuclear structures of the bulk powder samples were verified using time-of-flight neutron powder diffraction along with synchrotron X-ray powder diffraction. (57)Fe and (119)Sn Mössbauer spectroscopy confirmed the presence of Fe(2+) and Sn(4+) as well as the number of crystallographically unique positions. LIGS and LITS are semiconductors with indirect and direct bandgaps of 1.42 and 1.86 eV, respectively, according to optical diffuse-reflectance UV-vis-NIR spectroscopy. PMID:25397682

  10. THE ANISOTROPIC TRANSPORT EFFECTS ON DILUTE PLASMAS

    SciTech Connect

    Devlen, Ebru

    2011-04-20

    We examine the linear stability analysis of a hot, dilute, and differentially rotating plasma by considering anisotropic transport effects. In dilute plasmas, the ion Larmor radius is small compared with its collisional mean free path. In this case, the transport of heat and momentum along the magnetic field lines becomes important. This paper presents a novel linear instability that may be more powerful and greater than ideal magnetothermal instability and ideal magnetorotational instability in the dilute astrophysical plasmas. This type of plasma is believed to be found in the intracluster medium (ICM) of galaxy clusters and radiatively ineffective accretion flows around black holes. We derive the dispersion relation of this instability and obtain the instability condition. There is at least one unstable mode that is independent of the temperature gradient direction for a helical magnetic field geometry. This novel instability is driven by the gyroviscosity coupled with differential rotation. Therefore, we call it gyroviscous-modified magnetorotational instability (GvMRI). We examine how the instability depends on signs of the temperature gradient and the gyroviscosity and also on the magnitude of the thermal frequency and on the values of the pitch angle. We provide a detailed physical interpretation of the obtained results. The GvMRI is applicable not only to the accretion flows and ICM but also to the transition region between cool dense gas and the hot low-density plasma in stellar coronae, accretion disks, and the multiphase interstellar medium because it is independent of the temperature gradient direction.

  11. Dilution jet mixing program

    NASA Technical Reports Server (NTRS)

    Srinivasan, R.; Coleman, E.; Johnson, K.

    1984-01-01

    Parametric tests were conducted to quantify the mixing of opposed rows of jets (two-sided injection) in a confined cross flow. Results show that jet penetrations for two sided injections are less than that for single-sided injections, but the jet spreading rates are faster for a given momentum ratio and orifice plate. Flow area convergence generally enhances mixing. Mixing characteristics with asymmetric and symmetric convergence are similar. For constant momentum ratio, the optimum S/H(0) with in-line injections is one half the optimum value for single sided injections. For staggered injections, the optimum S/H(0) is twice the optimum value for single-sided injection. The correlations developed predicted the temperature distributions within first order accuracy and provide a useful tool for predicting jet trajectory and temperature profiles in the dilution zone with two-sided injections.

  12. Electronic structures and magnetism for carbon doped CdSe: Modified Becke-Johnson density functional calculations

    NASA Astrophysics Data System (ADS)

    Fan, S. W.; Song, T.; Huang, X. N.; Yang, L.; Ding, L. J.; Pan, L. Q.

    2016-09-01

    Utilizing the full potential linearized augment plane wave method, the electronic structures and magnetism for carbon doped CdSe are investigated. Calculations show carbon substituting selenium could induce CdSe to be a diluted magnetic semiconductor. Single carbon dopant could induce 2.00 μB magnetic moment. Electronic structures show the long-range ferromagnetic coupling mainly originates from the p-d exchange-like p-p coupling interaction. Positive chemical pair interactions indicate carbon dopants would form homogeneous distribution in CdSe host. The formation energy implies the non-equilibrium fabricated technology is necessary during the samples fabricated.

  13. Lattice location and local magnetism of recoil implanted Fe impurities in wide and narrow band semiconductors CdTe, CdSe, and InSb: Experiment and theory

    SciTech Connect

    Mohanta, S. K.; Mishra, S. N.

    2014-05-07

    Employing the time differential perturbed angular distribution method, we have measured local susceptibility and spin relaxation rate of {sup 54}Fe nuclei implanted in III-V and II-VI semiconductors, CdTe, CdSe, and InSb. The magnetic response of Fe, identified to occupy the metal as well as the semi-metal atom sites, exhibit Curie-Weiss type susceptibility and Korringa like spin relaxation rate, revealing the existence of localized moments with small spin fluctuation temperature. The experimental results are supported by first principle electronic structure calculations performed within the frame work of density functional theory.

  14. Magnetism and anomalous Hall effect in Co-(La,Sr)TiO3

    NASA Astrophysics Data System (ADS)

    Zhang, S. X.; Yu, W.; Ogale, S. B.; Shinde, S. R.; Kundaliya, D. C.; Tse, Wang-Kong; Young, S. Y.; Higgins, J. S.; Salamanca-Riba, L. G.; Herrera, M.; Fu, L. F.; Browning, N. D.; Greene, R. L.; Venkatesan, T.

    2007-08-01

    A systematic study of the magnetic properties and the Hall effect was performed on pulsed laser deposited 5% cobalt doped (La,Sr)TiO3 thin films, especially grown at high substrate temperature. The system is found to be superparamagnetic in nature as evidenced by several protocols of magnetic measurements. Nevertheless, the anomalous Hall effect (AHE) is observed in the system, the profile of the measured Hall resistivity vs magnetic field being found to be identical to the magnetic hysteresis loops. This highlights the limitations of AHE as a tool to test the intrinsic nature of ferromagnetism in a diluted magnetic system, supporting our previous report for the Co:TiO2 case [S. R. Shinde , Phys. Rev. Lett. 92, 166601 (2004)]. It is believed that the magnetic clusters polarize nearby electrons and the nonzero polarization leads to a net transverse current because of the spin dependent scattering, which gives rise to the observed AHE. We found that the magnitude of the AHE signal observed in the current extrinsic diluted magnetic semiconductor (DMS) is much lower (by a few orders of magnitude) than that found in the intrinsic long range ferromagnetic ordered DMS, which raises the possibility for using this magnitude, rather than the occurrence of AHE, as a criterion for intrinsic or extrinsic diluted magnetic system.

  15. Electronic and magnetic behaviors of graphene with 5d series transition metal atom substitutions: A first-principles study

    NASA Astrophysics Data System (ADS)

    Sun, Minglei; Tang, Wencheng; Ren, Qingqiang; Zhao, Yiming; Wang, Sake; Yu, Jin; Du, Yanhui; Hao, Yitong

    2016-06-01

    The electronic structures and magnetic behaviors of graphene with 5d series transition metal atom substitutions are investigated by performing first-principles calculations. All the impurities are tightly bonded to single vacancy in a graphene sheet. The substitutions of La and Ta lead to Fermi level shifting to valence and conduction band, respectively. Both the two substitutions result in metallic properties. Moreover, the Hf, Os and Pt-substituted systems exhibit semiconductor properties, while the Re and Ir-substituted ones exhibit robust half-metallic properties. Interestingly, W-substituted system shows dilute magnetic semiconductor property. On the other hand, the substitution of Ta, W, Re and Ir induce 0.86 μB, 2 μB, 1 μB and 0.99 μB magnetic moment, respectively. Our studies demonstrate that the 5d series transition metal substituted graphene have potential applications in nanoelectronics, spintronics and magnetic storage devices.

  16. Magnetic properties after irradiation of 1:4 complexes consisting of CoX2, X=NCS⁻, Cl⁻, and NCO⁻, and phenylpyridyldiazomethane in dilute frozen solutions: axial ligand effect in heterospin single-molecule magnets.

    PubMed

    Karasawa, Satoru; Koga, Noboru

    2011-06-01

    The solutions of 1:4 complexes of Co(X)(2)(D1py)(4), X = Cl(-), and NCO(-) and D1py = phenylpyridyldiazomethane, were photolyzed under cryogenic conditions, and their magnetic properties were investigated by direct current (DC) and alternating current (AC) magneto/susceptometries. After irradiation, the resulting cobalt-carbene complexes, Co(X)(2)(C1py)(4), exhibited the behaviors of heterospin single-molecule magnets (SMMs) strongly depending on the axial ligands. In Co(X)(2)(C1py)(4): X = Cl(-) and NCO(-), the effective activation barriers, U(eff), for the reorientation of the magnetic moment and the resonant quantum tunneling time, τ(Q), characteristic to SMM properties were estimated to be 91 and 130 K, and 4 × 10(3) and 2 × 10(5) s, respectively. The τ(Q) of Co(NCS)(2)(C1py)(4) with U(eff) = 89 K was found to be 6 × 10(2) s. In Co(X)(2)(C1py)(4): X = Cl(-) and NCO(-), temperature-dependent hysteresis loops were also observed below the blocking temperature (T(B) = 3.2 and 4.8 K, respectively) and the coercive forces, H(c), of 7.0 and 20 kOe at 1.9 K, respectively, were obtained. In a series of 1:4 complexes of Co(X)(2)(C1py)(4), X = NCS(-), Cl(-), and NCO(-), the axial ligands strongly affected the heterospin SMM properties, and the NCO(-) ion having the large magnitude of the ligand-field splitting in a spectrochemical series, gave the largest U(eff) and H(c) and the longest τ(Q).

  17. Stress in dilute suspensions

    NASA Technical Reports Server (NTRS)

    Passman, Stephen L.

    1989-01-01

    Generally, two types of theory are used to describe the field equations for suspensions. The so-called postulated equations are based on the kinetic theory of mixtures, which logically should give reasonable equations for solutions. The basis for the use of such theory for suspensions is tenuous, though it at least gives a logical path for mathematical arguments. It has the disadvantage that it leads to a system of equations which is underdetermined, in a sense that can be made precise. On the other hand, the so-called averaging theory starts with a determined system, but the very process of averaging renders the resulting system underdetermined. A third type of theory is proposed in which the kinetic theory of gases is used to motivate continuum equations for the suspended particles. This entails an interpretation of the stress in the particles that is different from the usual one. Classical theory is used to describe the motion of the suspending medium. The result is a determined system for a dilute suspension. Extension of the theory to more concentrated systems is discussed.

  18. A review of thermal processing in the subsecond range: semiconductors and beyond

    NASA Astrophysics Data System (ADS)

    Rebohle, Lars; Prucnal, Slawomir; Skorupa, Wolfgang

    2016-10-01

    Thermal processing in the subsecond range comprises modern, non-equilibrium annealing techniques which allow various material modifications at the surface without affecting the bulk. Flash lamp annealing (FLA) is one of the most diverse methods for short-time annealing with applications ranging from the classical field of semiconductor doping to the treatment of polymers and flexible substrates. It still continues to extend its use to other material classes and applications, and is becoming of interest for an increasing number of users. In this review we present a short, but comprehensive and consistent picture of the current state-of-the-art of FLA, sometimes also called pulsed light sintering. In the first part we take a closer look at the physical and technological background, namely the electrical and optical specifications of flash lamps, the resulting temperature profiles, and the corresponding implications for process-relevant parameters such as reproducibility and homogeneity. The second part briefly considers the various applications of FLA, starting with the classical task of defect minimization and ultra-shallow junction formation in Si, followed by further applications in Si technology, namely in the fields of hyperdoping, crystallization of thin amorphous films, and photovoltaics. Subsequent chapters cover the topics of doping and crystallization in Ge and silicon carbide, doping of III-V semiconductors, diluted magnetic semiconductors, III-V nanocluster synthesis in Si, annealing of transparent conductive oxides and high-k materials, nanoclusters in dielectric matrices, and the use of FLA for flexible substrates.

  19. Structural and Magnetic Analysis of Nanocrystalline Lead Europium Sulfide (PbxEuyS)

    SciTech Connect

    Somarajan, Suseela; Harrison, Melissa A; Koktysh, Dmitry S.; He, Weidong; Stillwell, Ryan L; Harl, Bobby; Schmidt, Ben; Rogers, Bridget; Payzant, E Andrew; Dickerson, II, James H.

    2012-01-01

    The authors report the synthesis of nanocrystalline, alloyed PbEuS, a potentially important dilute magnetic semiconductor. The thermolysis of mixed precursors has been adapted for the formation of homogeneous alloyed nanocrystals. X-ray diffraction and magnetization measurements of ternary PbEuS nanocrystals provide convincing evidence that no phase separation occurs in these nanomaterials for europium concentrations up to x = 0.17. X-ray photoelectron spectroscopy provides the atomic composition for PbEuS alloy nanocrystals juxtaposed with the ratio of the starting precursors.

  20. Voltage-controlled spin selection in a magnetic resonant tunneling diode.

    PubMed

    Slobodskyy, A; Gould, C; Slobodskyy, T; Becker, C R; Schmidt, G; Molenkamp, L W

    2003-06-20

    We have fabricated all II-VI semiconductor resonant tunneling diodes based on the (Zn,Mn,Be)Se material system, containing dilute magnetic material in the quantum well, and studied their current-voltage characteristics. When subjected to an external magnetic field the resulting spin splitting of the levels in the quantum well leads to a splitting of the transmission resonance into two separate peaks. This is interpreted as evidence of tunneling transport through spin polarized levels, and could be the first step towards a voltage controlled spin filter.

  1. Voltage-controlled spin selection in a magnetic resonant tunneling diode.

    PubMed

    Slobodskyy, A; Gould, C; Slobodskyy, T; Becker, C R; Schmidt, G; Molenkamp, L W

    2003-06-20

    We have fabricated all II-VI semiconductor resonant tunneling diodes based on the (Zn,Mn,Be)Se material system, containing dilute magnetic material in the quantum well, and studied their current-voltage characteristics. When subjected to an external magnetic field the resulting spin splitting of the levels in the quantum well leads to a splitting of the transmission resonance into two separate peaks. This is interpreted as evidence of tunneling transport through spin polarized levels, and could be the first step towards a voltage controlled spin filter. PMID:12857209

  2. Characterization of the Dilute Ising Antiferromagnet

    SciTech Connect

    Wiener, T.

    2000-09-12

    A spin glass is a magnetic ground state in which ferromagnetic and antiferromagnetic exchange interactions compete, thereby creating frustration and a multidegenerate state with no long range order. An Ising system is a system where the spins are constrained to lie parallel or antiparallel to a primary axis. There has been much theoretical interest in the past ten years in the effects of applying a magnetic field transverse to the primary axis in an Ising spin glass at low temperatures and thus study phase transitions at the T=0 limit. The focus of this study is to search for and characterize a new Ising spin glass system. This is accomplished by site diluting yttrium for terbium in the crystalline material TbNi{sub 2}Ge{sub 2}. The first part of this work gives a brief overview of the physics of rare earth magnetism and an overview of experimental characteristics of spin glasses. This is followed by the methodology used to manufacture the large single crystals used in this study, as well as the measurement techniques used. Next, a summary of the results of magnetic measurements on across the dilution series from pure terbium to pure yttrium is presented. This is followed by detailed measurements on particular dilutions which demonstrate spin glass behavior. Pure TbNi{sub 2}Ge{sub 2} is an Ising antiferromagnet with a several distinct metamagnetic states below 17 K. As the terbium is alloyed with yttrium, these magnetic states are weakened in a consistent manner, as is seen in measurements of the transition temperatures and analysis of Curie-Weiss behavior at high temperature. At low concentrations of terbium, below 35%, long range order is no longer present and a spin-glass-like state emerges. This state is studied through various measurements, dc and ac susceptibility, resistivity, and specific heat. This magnetic behavior was then compared to that of other well characterized spin glasses. It is concluded that there is a region of concentration s for which a spin

  3. Optical sensor of magnetic fields

    DOEpatents

    Butler, M.A.; Martin, S.J.

    1986-03-25

    An optical magnetic field strength sensor for measuring the field strength of a magnetic field comprising a dilute magnetic semi-conductor probe having first and second ends, longitudinally positioned in the magnetic field for providing Faraday polarization rotation of light passing therethrough relative to the strength of the magnetic field. Light provided by a remote light source is propagated through an optical fiber coupler and a single optical fiber strand between the probe and the light source for providing a light path therebetween. A polarizer and an apparatus for rotating the polarization of the light is provided in the light path and a reflector is carried by the second end of the probe for reflecting the light back through the probe and thence through the polarizer to the optical coupler. A photo detector apparatus is operably connected to the optical coupler for detecting and measuring the intensity of the reflected light and comparing same to the light source intensity whereby the magnetic field strength may be calculated.

  4. Electronic and magnetic properties of second main-group and second sub-group metals substitution for Al in delafossite CuAlO2

    NASA Astrophysics Data System (ADS)

    Liu, Qi-Jun; Liu, Fu-Sheng; Liu, Zheng-Tang

    2015-07-01

    A systematic theoretical investigation has been carried out for the structural, electronic and magnetic properties of second main-group and second sub-group metals substitution for Al in delafossite CuAlO2 in the framework of density functional theory. The structural parameters and formation energies were calculated and discussed. The appearance of enhanced p-type conductivity after doping has been analyzed. Moreover, it is shown that all dopants have relatively large magnetic moments, but their ferromagnetic states are unstable, showing that their potential application in dilute magnetic semiconductors is not applicable.

  5. Indium oxide: A transparent, conducting ferromagnetic semiconductor for spintronic applications

    NASA Astrophysics Data System (ADS)

    Babu, S. Harinath; Kaleemulla, S.; Rao, N. Madhusudhana; Krishnamoorthi, C.

    2016-10-01

    The optical and electrical properties are the two important dimensions of Indium oxide and its derivatives (indium tin oxide) and were well studied to understand the origin of wide electronic band gap and high electrical conductivity at room temperature. In2O3 and its derivatives find many applications in electronic and optoelectronic domains based on the above properties. The recent discovery of ferromagnetism in In2O3 at room temperature become a third dimension and lead to intensive research on enhancement of ferromagnetic strength by various means such as dopants and synthesis protocols and extrinsic parameters. The research lead to enormous experimental data and theoretical models proliferation over the past one decade with diverse insights into the origin of ferromagnetism in In2O3 based dilute magnetic semiconductors. The experimental data and theoretical models of ferromagnetism in In2O3 has been thoroughly surveyed in the literature and compiled all the data and presented for easy of understanding in this review. We have identified best chemical composition, geometry and synthesis protocols for strongest ferromagnetic strength and suitable theoretical model of magnetism has been presented in this review.

  6. Band Coupling Model of Electron and Hole Mediated Ferromagnetism in Semiconductors: The Case of GaN

    SciTech Connect

    Wei, S. H.; Dalpian, G. M.

    2008-01-01

    Transition metal (TM) doped diluted magnetic semiconductors (DMSs) have many unique physical properties that can be used for magneto-optical and spintronic applications. The DMSs exhibit a wide range of magnetic ordering behavior. For example, Mn doped GaN can be either ferromagnetic or antiferromagnetic, depending on the Mn concentration, carrier density, or pressure. A unified band coupling model based on the p-d and d-d level repulsions between the TM and host elements are developed to explain the hole-induced ferromagnetism. We show that kinetic s-d coupling can be introduced through chemical ordering and strain, thus leading to electron-mediated ferromagnetism. Moreover, by using rare-earth elements (e.g., Gd) as magnetic dopants, the symmetry-allowed s-f coupling can also lead to a large splitting at the conduction band edge, producing electron-mediated ferromagnetism. Our model, therefore, provides a simple guideline for future band structure engineering of magnetic semiconductors.

  7. Dilution refrigeration for space applications

    NASA Technical Reports Server (NTRS)

    Israelsson, U. E.; Petrac, D.

    1990-01-01

    Dilution refrigerators are presently used routinely in ground based applications where temperatures below 0.3 K are required. The operation of a conventional dilution refrigerator depends critically on the presence of gravity. To operate a dilution refrigerator in space many technical difficulties must be overcome. Some of the anticipated difficulties are identified in this paper and possible solutions are described. A single cycle refrigerator is described conceptually that uses forces other than gravity to function and the stringent constraints imposed on the design by requiring the refrigerator to function on the earth without using gravity are elaborated upon.

  8. Chain Dynamics in a Dilute Magnetorheological Fluid

    NASA Technical Reports Server (NTRS)

    Liu, Jing; Hagenbuchle, Martin

    1996-01-01

    The structure, formation, and dynamics of dilute, mono-dispersive ferrofluid emulsions in an external magnetic field have been investigated using dynamic light scattering techniques. In the absence of the magnetic field, the emulsion particles are randomly distributed and behave like hard spheres in Brownian motion. An applied magnetic field induces a magnetic dipole moment in each particle. Dipolar interactions between particles align them into chains where correlation functions show two decay processes. The short-time decay shows the motion of straight chains as a whole where the apparent chain length increases with the applied magnetic field and the particle volume fraction. Good scaling results are obtained showing that the apparent chain length grows with time following a power law with exponent of 0.6 and depends on the applied field, particle volume fraction, and diffusion constant of the particles. The long-time decay in the correlation function shows oscillation when the chains reach a certain length with time and stiffness with threshold field This result shows that chains not only fluctuate, but move in a periodic motion with a frequency of 364 Hz at lambda = 15. It may suggest the existence of phonons. This work is the first step in the understanding of the structure formation, especially chain coarsening mechanism, of magnetorheological (MR) fluids at higher volume fractions.

  9. Intermittency in dilute granular flows

    NASA Astrophysics Data System (ADS)

    Guo, Wenxuan; Zhang, Qiang; Wylie, Jonathan J.

    2016-07-01

    In this letter, we show that dilute granular systems can exhibit a type of intermittency that has no analogue in gas dynamics. We consider a simple system in which a very dilute set of granular particles falls under gravity through a nozzle. This setting is analogous to the classical problem of high-speed nozzle flow in the study of compressible gases. It is well known that very dilute granular systems exhibit behavior qualitatively similar to gases, and that gas flowing through a nozzle does not exhibit intermittency. Nevertheless, we show that the intermittency in dilute granular nozzle flows can occur and corresponds to complicated transitions between supersonic and subsonic regimes. We also provide detailed explanations of the mechanism underlying this phenomenon.

  10. Magnetic circular dichroism in the hard X-ray range

    NASA Astrophysics Data System (ADS)

    Rogalev, A.; Wilhelm, F.

    2015-12-01

    An overview of X-ray magnetic circular dichroism (XMCD) spectroscopy in the hard X-ray range is presented. A short historical overview shows how this technique has evolved from the early days of X-ray physics to become a workhorse technique in the modern magnetism research As with all X-ray spectroscopies, XMCD has the advantage of being element specific. Interpretation of the spectra based on magneto-optical sum rules can provide unique information about spin and orbital moment carried by absorbing atom in both amplitude and direction, can infer magnetic interactions from element selective magnetization curves, can allow separation of magnetic and non-magnetic components in heterogeneous systems. The review details the technology currently available for XMCD measurements in the hard X-ray range referring to the ESRF beamline ID12 as an example. The strengths of hard X-ray magnetic circular dichroism technique are illustrated with a wide variety of representative examples, such as actinide based ferromagnets, paramagnetism in metals, pure metallic nanoparticles, exchange spring magnets, half metallic ferromagnets, magnetism at interfaces, and dilute magnetic semiconductors. In this way, we aim to encourage researchers from various scientific communities to consider XMCD as a tool to understanding the electronic and magnetic properties of their samples.

  11. 40 CFR 1065.240 - Dilution air and diluted exhaust flow meters.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... dilution system, you may use a laminar flow element, an ultrasonic flow meter, a subsonic venturi, a... § 1065.240 Dilution air and diluted exhaust flow meters. (a) Application. Use a diluted exhaust flow meter to determine instantaneous diluted exhaust flow rates or total diluted exhaust flow over a...

  12. DAVINCI: Dilute Aperture VIsible Nulling Coronagraphic Imager

    NASA Technical Reports Server (NTRS)

    Shao, Michael; Levine, B. M.; Vasisht, G.; Lane, B. F.; Woodruff, R.; Vasudevan, G.; Samuele, R.; Lloyd, C. A.; Clampin, M.; Lyon, R.; Guyon, O.

    2008-01-01

    This slide presentation gives an overview of DAVINCI (Dilute Aperture VIsible Nulling Coronagraphic Imager). The presentation also includes information about dilute aperture coronagraph, and lyot efficiency.

  13. 2010 Defects in Semiconductors GRC

    SciTech Connect

    Shengbai Zhang

    2011-01-06

    Continuing its tradition of excellence, this Gordon Conference will focus on research at the forefront of the field of defects in semiconductors. The conference will have a strong emphasis on the control of defects during growth and processing, as well as an emphasis on the development of novel defect detection methods and first-principles defect theories. Electronic, magnetic, and optical properties of bulk, thin film, and nanoscale semiconductors will be discussed in detail. In contrast to many conferences, which tend to focus on specific semiconductors, this conference will deal with point and extended defects in a broad range of electronic materials. This approach has proved to be extremely fruitful for advancing fundamental understanding in emerging materials such as wide-band-gap semiconductors, oxides, sp{sup 2} carbon based-materials, and photovoltaic/solar cell materials, and in understanding important defect phenomena such as doping bottleneck in nanostructures and the diffusion of defects and impurities. The program consists of about twenty invited talks and a number of contributed poster sessions. The emphasis should be on work which has yet to be published. The large amount of discussion time provides an ideal forum for dealing with topics that are new and/or controversial.

  14. Boron doping a semiconductor particle

    SciTech Connect

    Stevens, Gary Don; Reynolds, Jeffrey Scott; Brown, Louanne Kay

    1998-06-09

    A method (10,30) of boron doping a semiconductor particle using boric acid to obtain a p-type doped particle. Either silicon spheres or silicon powder is mixed with a diluted solution of boric acid having a predetermined concentration. The spheres are dried (16), with the boron film then being driven (18) into the sphere. A melt procedure mixes the driven boron uniformly throughout the sphere. In the case of silicon powder, the powder is metered out (38) into piles and melted/fused (40) with an optical furnace. Both processes obtain a p-type doped silicon sphere with desired resistivity. Boric acid is not a restricted chemical, is inexpensive, and does not pose any special shipping, handling, or disposal requirements.

  15. Boron doping a semiconductor particle

    SciTech Connect

    Stevens, G.D.; Reynolds, J.S.; Brown, L.K.

    1998-06-09

    A method of boron doping a semiconductor particle using boric acid to obtain a p-type doped particle. Either silicon spheres or silicon powder is mixed with a diluted solution of boric acid having a predetermined concentration. The spheres are dried, with the boron film then being driven into the sphere. A melt procedure mixes the driven boron uniformly throughout the sphere. In the case of silicon powder, the powder is metered out into piles and melted/fused with an optical furnace. Both processes obtain a p-type doped silicon sphere with desired resistivity. Boric acid is not a restricted chemical, is inexpensive, and does not pose any special shipping, handling, or disposal requirements. 2 figs.

  16. Phosphorus doping a semiconductor particle

    DOEpatents

    Stevens, G.D.; Reynolds, J.S.

    1999-07-20

    A method of phosphorus doping a semiconductor particle using ammonium phosphate is disclosed. A p-doped silicon sphere is mixed with a diluted solution of ammonium phosphate having a predetermined concentration. These spheres are dried with the phosphorus then being diffused into the sphere to create either a shallow or deep p-n junction. A good PSG glass layer is formed on the surface of the sphere during the diffusion process. A subsequent segregation anneal process is utilized to strip metal impurities from near the p-n junction into the glass layer. A subsequent HF strip procedure is then utilized to removed the PSG layer. Ammonium phosphate is not a restricted chemical, is inexpensive, and does not pose any special shipping, handling, or disposal requirement. 1 fig.

  17. Phosphorous doping a semiconductor particle

    DOEpatents

    Stevens, Gary Don; Reynolds, Jeffrey Scott

    1999-07-20

    A method (10) of phosphorus doping a semiconductor particle using ammonium phosphate. A p-doped silicon sphere is mixed with a diluted solution of ammonium phosphate having a predetermined concentration. These spheres are dried (16, 18), with the phosphorus then being diffused (20) into the sphere to create either a shallow or deep p-n junction. A good PSG glass layer is formed on the surface of the sphere during the diffusion process. A subsequent segregation anneal process is utilized to strip metal impurities from near the p-n junction into the glass layer. A subsequent HF strip procedure is then utilized to removed the PSG layer. Ammonium phosphate is not a restricted chemical, is inexpensive, and does not pose any special shipping, handling, or disposal requirement.

  18. Unique Static Magnetic and Dynamic Electromagnetic Behaviors in Titanium Nitride/Carbon Composites Driven by Defect Engineering.

    PubMed

    Gong, Chunhong; Meng, Hongjie; Zhao, Xiaowei; Zhang, Xuefeng; Yu, Laigui; Zhang, Jingwei; Zhang, Zhijun

    2016-01-01

    Recently, the defect-induced static magnetic behaviours of nanomaterials have been a cutting-edge issue in diluted magnetic semiconductor materials. However, the dynamic magnetic properties of nanomaterials are commonly ignored if their bulk counterparts are non-magnetic. In the present research, titanium nitride-carbon (TiN/C) nanocomposites were found to exhibit both static and dynamic magnetic properties that vary in the opposite trend. Moreover, novel unconventional electromagnetic resonance behaviour was demonstrated in TiN/C systems, and their permeability and permittivity show similar trend. This is challenging for the traditional understanding of electromagnetism and makes it possible to achieve an appropriate balance between the permeability and permittivity simultaneously in a simple system. Hopefully, the results could provide some valuable clues to revealing the magnetism and electromagnetism of nanostructures. PMID:26739853

  19. Unique Static Magnetic and Dynamic Electromagnetic Behaviors in Titanium Nitride/Carbon Composites Driven by Defect Engineering

    PubMed Central

    Gong, Chunhong; Meng, Hongjie; Zhao, Xiaowei; Zhang, Xuefeng; Yu, Laigui; Zhang, Jingwei; Zhang, Zhijun

    2016-01-01

    Recently, the defect-induced static magnetic behaviours of nanomaterials have been a cutting-edge issue in diluted magnetic semiconductor materials. However, the dynamic magnetic properties of nanomaterials are commonly ignored if their bulk counterparts are non-magnetic. In the present research, titanium nitride-carbon (TiN/C) nanocomposites were found to exhibit both static and dynamic magnetic properties that vary in the opposite trend. Moreover, novel unconventional electromagnetic resonance behaviour was demonstrated in TiN/C systems, and their permeability and permittivity show similar trend. This is challenging for the traditional understanding of electromagnetism and makes it possible to achieve an appropriate balance between the permeability and permittivity simultaneously in a simple system. Hopefully, the results could provide some valuable clues to revealing the magnetism and electromagnetism of nanostructures. PMID:26739853

  20. High field magnetotransport and point contact Andreev reflection measurements on CuCr{sub 2}Se{sub 4} and CuCr{sub 2}Se{sub 3}Br—Degenerate magnetic semiconductor single crystals

    SciTech Connect

    Borisov, K. Coey, J. M. D.; Stamenov, P.; Alaria, J.

    2014-05-07

    Single crystals of the metallically degenerate fully magnetic semiconductors CuCr{sub 2}Se{sub 4} and CuCr{sub 2}Se{sub 3}Br have been prepared by the Chemical Vapour Transport method, using either Se or Br as transport agents. The high-quality, millimetre-sized, octahedrally faceted, needle- and platelet-shaped crystals are characterised by means of high field magnetotransport (μ{sub 0}H≤ 14 T) and Point Contact Andreev Reflection. The relatively high spin polarisation observed |P|>0.56, together with the relatively low minority carrier effective mass of 0.25 m{sub e}, and long scattering time  10{sup −13} s, could poise these materials for integration in low- and close-to-room temperature minority injection bipolar heterojunction transistor demonstrations.

  1. Electronic and magnetic properties of 1T-HfS2 by doping transition-metal atoms

    NASA Astrophysics Data System (ADS)

    Zhao, Xu; Wang, Tianxing; Wang, Guangtao; Dai, Xianqi; Xia, Congxin; Yang, Lin

    2016-10-01

    We explored the electronic and magnetic properties of 1T-HfS2 doped by transition metal (TM) atom using the first-principles calculation. We doped the transition metal atoms from the IIIB to VIB groups in nonmagnetic 1T-HfS2. Numerical results show that the pristine 1T-HfS2 is a semiconductor with indirect gaps of 1.250 eV. Magnetism can be observed for V, Cr, Mn, Fe, Co, and Cu doping. The polarized charges mainly arise from the localized 3d electrons of the TM atom. The strong p-d hybridization was found between the 3d orbitals of TM and 3p orbitals of S. The substituted 1T-HfS2 can be a metal, semiconductor or half-metal. Analysis of the band structure and magnetic properties indicates that TM-doped HfS2 (TM = V, Fe, Cu) are promising systems to explore two-dimensional diluted magnetic semiconductors. The formation energy calculations also indicate that it is energetically favorable and relatively easier to incorporate transition metal atom into the HfS2 under S-rich experimental conditions. In contrast, V-doped HfS2 has relatively wide half-metallic gap and low formation energy. So V-doped 1T-HfS2 is ideal for spin injection, which is important for application in semiconductor spintronics.

  2. Unitary lens semiconductor device

    DOEpatents

    Lear, K.L.

    1997-05-27

    A unitary lens semiconductor device and method are disclosed. The unitary lens semiconductor device is provided with at least one semiconductor layer having a composition varying in the growth direction for unitarily forming one or more lenses in the semiconductor layer. Unitary lens semiconductor devices may be formed as light-processing devices such as microlenses, and as light-active devices such as light-emitting diodes, photodetectors, resonant-cavity light-emitting diodes, vertical-cavity surface-emitting lasers, and resonant cavity photodetectors. 9 figs.

  3. Unitary lens semiconductor device

    DOEpatents

    Lear, Kevin L.

    1997-01-01

    A unitary lens semiconductor device and method. The unitary lens semiconductor device is provided with at least one semiconductor layer having a composition varying in the growth direction for unitarily forming one or more lenses in the semiconductor layer. Unitary lens semiconductor devices may be formed as light-processing devices such as microlenses, and as light-active devices such as light-emitting diodes, photodetectors, resonant-cavity light-emitting diodes, vertical-cavity surface-emitting lasers, and resonant cavity photodetectors.

  4. Thermodynamics of a dilute XX chain in a field

    NASA Astrophysics Data System (ADS)

    Timonin, P. N.

    2016-06-01

    Gapless phases in ground states of low-dimensional quantum spin systems are rather ubiquitous. Their peculiarity is a remarkable sensitivity to external perturbations due to permanent criticality of such phases manifested by a slow (power-low) decay of pair correlations and the divergence of the corresponding susceptibility. A strong influence of various defects on the properties of the system in such a phase can then be expected. Here, we consider the influence of vacancies on the thermodynamics of the simplest quantum model with a gapless phase, the isotropic spin-1/2 XX chain. The existence of the exact solution of this model gives a unique opportunity to describe in detail the dramatic effect of dilution on the gapless phase—the appearance of an infinite series of quantum phase transitions resulting from level crossing under the variation of a longitudinal magnetic field. We calculate the jumps in the field dependences of the ground-state longitudinal magnetization, susceptibility, entropy, and specific heat appearing at these transitions and show that they result in a highly nonlinear temperature dependence of these parameters at low T. Also, the effect of enhancement of the magnetization and longitudinal correlations in the dilute chain is established. The changes of the pair spin correlators under dilution are also analyzed. The universality of the mechanism of the quantum transition generation suggests that similar effects of dilution can also be expected in gapless phases of other low-dimensional quantum spin systems.

  5. Dilution and the elusive baseline.

    PubMed

    Likens, Gene E; Buso, Donald C

    2012-04-17

    Knowledge of baseline conditions is critical for evaluating quantitatively the effect of human activities on environmental conditions, such as the impact of acid deposition. Efforts to restore ecosystems to prior, "pristine" condition require restoration targets, often based on some presumed or unknown baseline condition. Here, we show that rapid and relentless dilution of surface water chemistry is occurring in the White Mountains of New Hampshire, following decades of acid deposition. Extrapolating measured linear trends using a unique data set of up to 47 years, suggest that both precipitation and streamwater chemistry (r(2) >0.84 since 1985) in the Hubbard Brook Experimental Forest (HBEF) will approximate demineralized water within one to three decades. Because such dilute chemistry is unrealistic for surface waters, theoretical baseline compositions have been calculated for precipitation and streamwater: electrical conductivity of 3 and 5 μS/cm, base cation concentrations of 7 and 39 μeq/liter, acid-neutralizing capacity values of <1 and 14 μeq/liter, respectively; and pH 5.5 for both. Significantly large and rapid dilution of surface waters to values even more dilute than proposed for Pre-Industrial Revolution (PIR) conditions has important ecological, biogeochemical and water resource management implications, such as for the success of early reproductive stages of aquatic organisms.

  6. Dilution and the elusive baseline.

    PubMed

    Likens, Gene E; Buso, Donald C

    2012-04-17

    Knowledge of baseline conditions is critical for evaluating quantitatively the effect of human activities on environmental conditions, such as the impact of acid deposition. Efforts to restore ecosystems to prior, "pristine" condition require restoration targets, often based on some presumed or unknown baseline condition. Here, we show that rapid and relentless dilution of surface water chemistry is occurring in the White Mountains of New Hampshire, following decades of acid deposition. Extrapolating measured linear trends using a unique data set of up to 47 years, suggest that both precipitation and streamwater chemistry (r(2) >0.84 since 1985) in the Hubbard Brook Experimental Forest (HBEF) will approximate demineralized water within one to three decades. Because such dilute chemistry is unrealistic for surface waters, theoretical baseline compositions have been calculated for precipitation and streamwater: electrical conductivity of 3 and 5 μS/cm, base cation concentrations of 7 and 39 μeq/liter, acid-neutralizing capacity values of <1 and 14 μeq/liter, respectively; and pH 5.5 for both. Significantly large and rapid dilution of surface waters to values even more dilute than proposed for Pre-Industrial Revolution (PIR) conditions has important ecological, biogeochemical and water resource management implications, such as for the success of early reproductive stages of aquatic organisms. PMID:22455659

  7. Hydrogen effect on electronic and magnetic properties of Cd1-xMnxTe: Ab initio study

    NASA Astrophysics Data System (ADS)

    Larabi, A.; Merad, G.; Abdelaoui, I.; Sari, A.

    2016-07-01

    Hydrogen effect on electronic and magnetic properties of diluted magnetic semiconductor (DMS) Cd1-xMnxTe for x composition of 0.125 has been investigated using the projected augmented wave (PAW) based on density functional theory (DFT) formalism within the generalized gradient approximation (GGA). The results show that the Mn dopant is spin-polarized with magnetic moment of 4.189 μB per Mn atom at x≈0.125. The calculated formation energies indicate that the hydrogen is not stable in CdTe and the lowest energy position for H is at the Cd-Mn bond center in Cd0.875Mn0.125Te. We find also that the existence of interstitial hydrogen decreases the magnetic moment of Cd0.875Mn0.125Te diluted magnetic semiconductor. From the calculated density of state, we observed that the presence of hydrogen does not cause a change in electronic properties of Cd0.875Mn0.125Te.

  8. Crystallization of a dilute atomic dipolar condensate

    NASA Astrophysics Data System (ADS)

    Bisset, Russell; Blakie, Blair

    2016-05-01

    A recent experiment found that a dilute BEC of highly-magnetic dysprosium atoms may spontaneously break up into a crystal of droplets, a process reminiscent of the Rosensweig instability [ArXiv:1508.05007]. We dynamically simulate this scenario and find that the standard dipolar Gross-Pitaevskii equation (GPE) cannot explain such a droplet crystal. Indeed, the GPE predicts too much heating during the violent droplet formation, and a droplet lifetime that is much shorter than observed in the experiment. We investigate the requisite properties of the unknown stabilization mechanism, and find that an effective repulsive interaction with a higher order density dependence than the usual two-body interactions is required to quantitatively reproduce the experimental results.

  9. Structural, transport and optical properties of (La0.6Pr0.4)0.65Ca0.35MnO3 nanocrystals: a wide band-gap magnetic semiconductor.

    PubMed

    Kumar, Satyam; Dwivedi, G D; Kumar, Shiv; Mathur, R B; Saxena, U; Ghosh, A K; Joshi, Amish G; Yang, H D; Chatterjee, Sandip

    2015-02-21

    (La0.6Pr0.4)0.65Ca0.35MnO3 system has been synthesized via a sol-gel route at different sintering temperatures. Structural, transport and optical measurements have been carried out to investigate (La0.6Pr0.4)0.65Ca0.35MnO3 nanoparticles. Raman spectra show that Jahn-Teller distortion has been decreased due to the presence of Ca and Pr in A-site. Magnetic measurements provide a Curie temperature around 200 K and saturation magnetization (MS) of about 3.43μB/Mn at 5 K. X-ray photoemission spectroscopy study suggests that Mn exists in a dual oxidation state (Mn(3+) and Mn(4+)). Resistivity measurements suggest that charge-ordered states of Mn(3+) and Mn(4+), which might be influenced by the presence of Pr, have enhanced insulating behavior in (La0.6Pr0.4)0.65Ca0.35MnO3. Band gap estimated from UV-Vis spectroscopy measurements comes in the range of wide band gap semiconductors (∼3.5 eV); this makes (La0.6Pr0.4)0.65Ca0.35MnO3 a potential candidate for device application. PMID:25567084

  10. A hybrid magnetic/complementary metal oxide semiconductor process design kit for the design of low-power non-volatile logic circuits

    NASA Astrophysics Data System (ADS)

    Di Pendina, G.; Prenat, G.; Dieny, B.; Torki, K.

    2012-04-01

    Since the advent of the MOS transistor, the performance of microelectronic circuits has followed Moore's law, stating that their speed and density would double every 18 months. Today, this trend tends to get out of breath: the continuously decreasing size of devices and increasing operation frequency result in power consumption and heating issues. Among the solutions investigated to circumvent these limitations, the use of non-volatile devices appears particularly promising. It allows easing, for example, the power gating technique, which consists in cutting-off the power supply of inactive blocks without losing information, drastically reducing the standby power consumption. In this approach, the advantages of magnetic tunnel junctions (MTJs) compared with other non-volatile devices allow one to design hybrid CMOS/magnetic circuits with high performance and new functionalities. Designing such circuits requires integrating MTJs in standard microelectronics design suites. This is performed by means of a process design kit (PDK) for the hybrid CMOS/magnetic technology. We present here a full magnetic PDK, which contains a compact model of the MTJ for electrical simulation, technology files for layout and physical verifications, and standard cells for the design of complex logic circuits and which is compatible with standard design suites. This PDK allows designers to accurately and comfortably design high-performance hybrid CMOS/magnetic logic circuits in the same way as standard CMOS circuits.

  11. Voltage controlled magnetism in 3d transitional metals

    NASA Astrophysics Data System (ADS)

    Wang, Weigang

    2015-03-01

    Despite having attracted much attention in multiferroic materials and diluted magnetic semiconductors, the impact of an electric field on the magnetic properties remains largely unknown in 3d transitional ferromagnets (FMs) until recent years. A great deal of effort has been focused on the voltage-controlled magnetic anisotropy (VCMA) effect where the modulation of anisotropy field is understood by the change of electron density among different d orbitals of FMs in the presence of an electric field. Here we demonstrate another approach to alter the magnetism by electrically controlling the oxidation state of the 3d FM at the FM/oxide interface. The thin FM film sandwiched between a heavy metal layer and a gate oxide can be reversibly changed from an optimally-oxidized state with a strong perpendicular magnetic anisotropy to a metallic state with an in-plane magnetic anisotropy, or to a fully-oxidized state with nearly zero magnetization, depending on the polarity and time duration of the applied electric fields. This is a voltage controlled magnetism (VCM) effect, where both the saturation magnetization and anisotropy field of the 3d FM layer can be simultaneously controlled by voltage in a non-volatile fashion. We will also discuss the impact of this VCM effect on magnetic tunnel junctions and spin Hall switching experiments. This work, in collaboration with C. Bi, Y.H. Liu, T. Newhouse-Illige, M. Xu, M. Rosales, J.W. Freeland, O. Mryasov, S. Zhang, and S.G.E. te Velthuis, was supported in part by NSF (ECCS-1310338) and by C-SPIN, one of six centers of STARnet, a Semiconductor Research Corporation program, sponsored by MARCO and DARPA.

  12. Semiconductor ohmic contact

    NASA Technical Reports Server (NTRS)

    Hawrylo, Frank Zygmunt (Inventor); Kressel, Henry (Inventor)

    1977-01-01

    A semiconductor device has one surface of P type conductivity material having a wide energy bandgap and a large crystal lattice parameter. Applied to the P type surface of the semiconductor device is a degenerate region of semiconductor material, preferably a group III-V semiconductor material, having a narrower energy bandgap. The degenerate region is doped with tin to increase the crystal lattice of the region to more closely approximate the crystal lattice of the one surface of the semiconductor device. The degenerate region is compensatingly doped with a P type conductivity modifier. An electrical contact is applied to one surface of the degenerate region forming an ohmic contact with the semiconductor device.

  13. Electronic structure of magnetic semiconductor CdCr{sub 2}Te{sub 4}: A possible spin-dependent symmetry filter

    SciTech Connect

    Sims, H.; Butler, W. H.; Ramasamy, K.; Gupta, A.

    2013-11-04

    We present a theoretical investigation of the electronic and magnetic structure of spinel CdCr{sub 2}Te{sub 4} using density functional theory, its extensions via onsite Hubbard U interactions, and a screened-hybrid-functional exchange potential. We find that the ground state is semiconducting within the latter approach, and within this magnetic-semiconducting system, we compute the complex band structure, finding a slowly decaying evanescent Δ{sup ~}{sub 1} state possibly suitable for realizing a spin-dependent symmetry filter effect.

  14. First-principles study of the magnetism of Ni-doped MoS2 monolayer

    NASA Astrophysics Data System (ADS)

    Luo, Min; Hao Shen, Yu; Hao Chu, Jun

    2016-09-01

    The magnetic properties of Ni-doped monolayer MoS2 are investigated using the density function theory. The results show that two Ni-doped systems of the nearest-neighbor configuration are ferromagnetic. The p-d hybridization between the Ni dopant and its neighboring S atoms results in the splitting of energy levels near the Fermi energy. These results suggest the p-d hybridization mechanism for the magnetism of the Ni-doped MoS2 monolayer. The magnetic moment disappears with increasing Ni-Ni distance. Our studies predict the nearest two-Ni-doped MoS2 monolayers to be candidates for thin dilute magnetic semiconductors. Moreover, the formation energy calculations indicate that it would be easier to incorporate Ni atoms into a S-rich MoS2 monolayer in the experiment.

  15. Electronic and magnetic properties of Co doped MoS2 monolayer

    PubMed Central

    Wang, Yiren; Li, Sean; Yi, Jiabao

    2016-01-01

    First principle calculations are employed to calculate the electronic and magnetic properties of Co doped MoS2 by considering a variety of defects including all the possible defect complexes. The results indicate that pristine MoS2 is nonmagnetic. The materials with the existence of S vacancy or Mo vacancy alone are non-magnetic either. Further calculation demonstrates that Co substitution at Mo site leads to spin polarized state. Two substitutional CoMo defects tend to cluster and result in the non-magnetic behaviour. However, the existence of Mo vacancies leads to uniform distribution of Co dopants and it is energy favourable with ferromagnetic coupling, resulting in an intrinsic diluted magnetic semiconductor. PMID:27052641

  16. Semiconductor bridge (SCB) detonator

    DOEpatents

    Bickes, Jr., Robert W.; Grubelich, Mark C.

    1999-01-01

    The present invention is a low-energy detonator for high-density secondary-explosive materials initiated by a semiconductor bridge igniter that comprises a pair of electrically conductive lands connected by a semiconductor bridge. The semiconductor bridge is in operational or direct contact with the explosive material, whereby current flowing through the semiconductor bridge causes initiation of the explosive material. Header wires connected to the electrically-conductive lands and electrical feed-throughs of the header posts of explosive devices, are substantially coaxial to the direction of current flow through the SCB, i.e., substantially coaxial to the SCB length.

  17. Semiconductor bridge (SCB) detonator

    DOEpatents

    Bickes, R.W. Jr.; Grubelich, M.C.

    1999-01-19

    The present invention is a low-energy detonator for high-density secondary-explosive materials initiated by a semiconductor bridge (SCB) igniter that comprises a pair of electrically conductive lands connected by a semiconductor bridge. The semiconductor bridge is in operational or direct contact with the explosive material, whereby current flowing through the semiconductor bridge causes initiation of the explosive material. Header wires connected to the electrically-conductive lands and electrical feed-throughs of the header posts of explosive devices, are substantially coaxial to the direction of current flow through the SCB, i.e., substantially coaxial to the SCB length. 3 figs.

  18. Interconnected semiconductor devices

    DOEpatents

    Grimmer, Derrick P.; Paulson, Kenneth R.; Gilbert, James R.

    1990-10-23

    Semiconductor layer and conductive layer formed on a flexible substrate, divided into individual devices and interconnected with one another in series by interconnection layers and penetrating terminals.

  19. Understanding electronic systems in semiconductor quantum dots

    NASA Astrophysics Data System (ADS)

    Ciftja, Orion

    2013-11-01

    Systems of confined electrons are found everywhere in nature in the form of atoms where the orbiting electrons are confined by the Coulomb attraction of the nucleus. Advancement of nanotechnology has, however, provided us with an alternative way to confine electrons by using artificial confining potentials. A typical structure of this nature is the quantum dot, a nanoscale system which consists of few confined electrons. There are many types of quantum dots ranging from self-assembled to miniaturized semiconductor quantum dots. In this work we are interested in electrostatically confined semiconductor quantum dot systems where the electrostatic confining potential that traps the electrons is generated by external electrodes, doping, strain or other factors. A large number of semiconductor quantum dots of this type are fabricated by applying lithographically patterned gate electrodes or by etching on two-dimensional electron gases in semiconductor heterostructures. Because of this, the whole structure can be treated as a confined two-dimensional electron system. Quantum confinement profoundly affects the way in which electrons interact with each other, and external parameters such as a magnetic field. Since a magnetic field affects both the orbital and the spin motion of the electrons, the interplay between quantum confinement, electron-electron correlation effects and the magnetic field gives rise to very interesting physical phenomena. Thus, confined systems of electrons in a semiconductor quantum dot represent a unique opportunity to study fundamental quantum theories in a controllable atomic-like setup. In this work, we describe some common theoretical models which are used to study confined systems of electrons in a two-dimensional semiconductor quantum dot. The main emphasis of the work is to draw attention to important physical phenomena that arise in confined two-dimensional electron systems under various quantum regimes.

  20. Influence of temperature on spin polarization dynamics in dilute nitride semiconductors—Role of nonparamagnetic centers

    SciTech Connect

    Baranowski, M.; Misiewicz, J.

    2015-10-21

    We report theoretical studies of spin polarization dynamics in dilute nitride semiconductors. We develop a commonly used rate equation model [Lagarde et al., Phys. Status Solidi A 204, 208 (2007) and Kunold et al. Phys. Rev. B 83, 165202 (2011)] to take into account the influence of shallow localizing states on the temperature dependence of spin polarization dynamics and a spin filtering effect. Presented investigations show that the experimentally observed temperature dependence of a spin polarization lifetime in dilute nitrides can be related to the electron capture process by shallow localizing states without paramagnetic properties. This process reduces the efficiency of spin filtering effect by deep paramagnetic centers, especially at low temperatures.

  1. Influence of temperature on spin polarization dynamics in dilute nitride semiconductors—Role of nonparamagnetic centers

    NASA Astrophysics Data System (ADS)

    Baranowski, M.; Misiewicz, J.

    2015-10-01

    We report theoretical studies of spin polarization dynamics in dilute nitride semiconductors. We develop a commonly used rate equation model [Lagarde et al., Phys. Status Solidi A 204, 208 (2007) and Kunold et al. Phys. Rev. B 83, 165202 (2011)] to take into account the influence of shallow localizing states on the temperature dependence of spin polarization dynamics and a spin filtering effect. Presented investigations show that the experimentally observed temperature dependence of a spin polarization lifetime in dilute nitrides can be related to the electron capture process by shallow localizing states without paramagnetic properties. This process reduces the efficiency of spin filtering effect by deep paramagnetic centers, especially at low temperatures.

  2. The extrinsic hysteresis behavior of dilute binary ferrofluids.

    PubMed

    Lin, Lihua; Li, Jian; Lin, Yueqiang; Liu, Xiaodong; Chen, Longlong; Li, Junming; Li, Decai

    2014-10-01

    We report on the magnetization behavior of dilute binary ferrofluids based on γ-Fe(2)O(3)/Ni(2)O(3) composite nanoparticles (A particles), with diameter about 11 nm, and ferrihydrite (Fe(5)O(7)(OH) ・4H2O) nanoparticles (B particles), with diameter about 6 nm. The results show that for the binary ferrofluids with A-particle volume fraction φ(A) = 0.2% and B-particle volume fractions φ(B) = 0.1% and φ(B) = 0.6%, the magnetization curves exhibit quasi-magnetic hysteresis behavior. The demagnetizing curves coincide with the magnetizing curves at high fields. However, for single γ-Fe(2)O(3)/Ni(2)O(3) ferrofluids with φ(A) = 0.2% and binary ferrofluids with φ(A) = 0.2% and φ(B) = 1.0%, the magnetization curves do not behave in this way. Additionally, at high field (750 kA/m), the binary ferrofluid with φ(B) = 1.0% has the smallest magnetization. From the model-of-chain theory, the extrinsic hysteresis behavior of these samples is attributed to the field-induced effects of pre-existing A particle chains, which involve both Brownian rotation of the chains'moments and a Néel rotation of the particles' moments in the chains. The loss of magnetization for the ferrofluids with φ(B) = 1.0% is attributed to pre-existing ring-like A-particle aggregates. These magnetization behaviors of the dilute binary ferrofluids not only depend on features of the strongly magnetic A-particle system, but also modifications of the weaker magnetic B-particle system. PMID:25365919

  3. Science Notes: Dilution of a Weak Acid

    ERIC Educational Resources Information Center

    Talbot, Christopher; Wai, Chooi Khee

    2014-01-01

    This "Science note" arose out of practical work involving the dilution of ethanoic acid, the measurement of the pH of the diluted solutions and calculation of the acid dissociation constant, K[subscript a], for each diluted solution. The students expected the calculated values of K[subscript a] to be constant but they found that the…

  4. Synthesis of semiconductor nanoparticles.

    PubMed

    Chen, Xianfeng; Dobson, Peter J

    2012-01-01

    Here, we describe typical methods and provide detailed experimental protocols for synthesizing and processing various semiconductor nanoparticles which have potential application in biology and medicine. These include synthesis of binary semiconductor nanoparticles; core@shell nanoparticles and alloyed nanoparticles; size-selective precipitation to obtain monodisperse nanoparticles; and strategies for phase transfer of nanoparticles from organic solution to aqueous media. PMID:22791427

  5. Nonmonotonic residual entropy in diluted spin ice: A comparison between Monte Carlo simulations of diluted dipolar spin ice models and experimental results

    NASA Astrophysics Data System (ADS)

    Lin, T.; Ke, X.; Thesberg, M.; Schiffer, P.; Melko, R. G.; Gingras, M. J. P.

    2014-12-01

    Spin ice materials, such as Dy2Ti2O7 and Ho2Ti2O7 , are highly frustrated magnetic systems. Their low-temperature strongly correlated state can be mapped onto the proton disordered state of common water ice. As a result, spin ices display the same low-temperature residual Pauling entropy as water ice, at least in calorimetric experiments that are equilibrated over moderately long-time scales. It was found in a previous study [X. Ke et al., Phys. Rev. Lett. 99, 137203 (2007), 10.1103/PhysRevLett.99.137203] that, upon dilution of the magnetic rare-earth ions (Dy3 + and Ho3 +) by nonmagnetic yttrium (Y3 +) ions, the residual entropy depends nonmonotonically on the concentration of Y3 + ions. A quantitative description of the magnetic specific heat of site-diluted spin ice materials can be viewed as a further test aimed at validating the microscopic Hamiltonian description of these systems. In this work, we report results from Monte Carlo simulations of site-diluted microscopic dipolar spin ice models (DSIM) that account quantitatively for the experimental specific-heat measurements, and thus also for the residual entropy, as a function of dilution, for both Dy2 -xYxTi2O7 and Ho2 -xYxTi2O7 . The main features of the dilution physics displayed by the magnetic specific-heat data are quantitatively captured by the diluted DSIM up to 85% of the magnetic ions diluted (x =1.7 ). The previously reported departures in the residual entropy between Dy2 -xYxTi2O7 versus Ho2 -xYxTi2O7 , as well as with a site-dilution variant of Pauling's approximation, are thus rationalized through the site-diluted DSIM. We find for 90% (x =1.8 ) and 95% (x =1.9 ) of the magnetic ions diluted in Dy2 -xYxTi2O7 a significant discrepancy between the experimental and Monte Carlo specific-heat results. We discuss possible reasons for this disagreement.

  6. Reduction in the interface-states density of metal-oxide-semiconductor field-effect transistors fabricated on high-index Si (114) surfaces by using an external magnetic field

    SciTech Connect

    Molina, J. De La Hidalga, J.; Gutierrez, E.

    2014-08-14

    After fabrication of Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) devices on high-index silicon (114) surfaces, their threshold voltage (Vth) and interface-states density (Dit) characteristics were measured under the influence of an externally applied magnetic field of B = 6 μT at room temperature. The electron flow of the MOSFET's channel presents high anisotropy on Si (114), and this effect is enhanced by using an external magnetic field B, applied parallel to the Si (114) surface but perpendicular to the electron flow direction. This special configuration results in the channel electrons experiencing a Lorentzian force which pushes the electrons closer to the Si (114)-SiO{sub 2} interface and therefore to the special morphology of the Si (114) surface. Interestingly, Dit evaluation of n-type MOSFETs fabricated on Si (114) surfaces shows that the Si (114)-SiO{sub 2} interface is of high quality so that Dit as low as ∼10{sup 10 }cm{sup −2}·eV{sup −1} are obtained for MOSFETs with channels aligned at specific orientations. Additionally, using both a small positive Vds ≤ 100 mV and B = 6 μT, the former Dit is reduced by 35% in MOSFETs whose channels are aligned parallel to row-like nanostructures formed atop Si (114) surfaces (channels having a 90° rotation), whereas Dit is increased by 25% in MOSFETs whose channels are aligned perpendicular to these nanostructures (channels having a 0° rotation). From these results, the special morphology of a high-index Si (114) plane having nanochannels on its surface opens the possibility to reduce the electron-trapping characteristics of MOSFET devices having deep-submicron features and operating at very high frequencies.

  7. Resistance transition assisted geometry enhanced magnetoresistance in semiconductors

    SciTech Connect

    Luo, Zhaochu; Zhang, Xiaozhong

    2015-05-07

    Magnetoresistance (MR) reported in some non-magnetic semiconductors (particularly silicon) has triggered considerable interest owing to the large magnitude of the effect. Here, we showed that MR in lightly doped n-Si can be significantly enhanced by introducing two diodes and proper design of the carrier path [Wan, Nature 477, 304 (2011)]. We designed a geometrical enhanced magnetoresistance (GEMR) device whose room-temperature MR ratio reaching 30% at 0.065 T and 20 000% at 1.2 T, respectively, approaching the performance of commercial MR devices. The mechanism of this GEMR is: the diodes help to define a high resistive state (HRS) and a low resistive state (LRS) in device by their openness and closeness, respectively. The ratio of apparent resistance between HRS and LRS is determined by geometry of silicon wafer and electrodes. Magnetic field could induce a transition from LRS to HRS by reshaping potential and current distribution among silicon wafer, resulting in a giant enhancement of intrinsic MR. We expect that this GEMR could be also realized in other semiconductors. The combination of high sensitivity to low magnetic fields and large high-field response should make this device concept attractive to the magnetic field sensing industry. Moreover, because this MR device is based on a conventional silicon/semiconductor platform, it should be possible to integrate this MR device with existing silicon/semiconductor devices and so aid the development of silicon/semiconductor-based magnetoelectronics. Also combining MR devices and semiconducting devices in a single Si/semiconductor chip may lead to some novel devices with hybrid function, such as electric-magnetic-photonic properties. Our work demonstrates that the charge property of semiconductor can be used in the magnetic sensing industry, where the spin properties of magnetic materials play a role traditionally.

  8. Magnetoviscosity in dilute ferrofluids from rotational brownian dynamics simulations.

    PubMed

    Soto-Aquino, D; Rinaldi, C

    2010-10-01

    Ferrofluids are suspensions of magnetic nanoparticles which respond to imposed magnetic fields by changing their viscosity without losing their fluidity. Prior work on modeling the behavior of ferrofluids has focused on using phenomenological suspension-scale continuum equations. A disadvantage of this approach is the controversy surrounding the equation describing the rate of change of the ferrofluid magnetization, the so-called magnetization relaxation equation. In this contribution the viscosity of dilute suspensions of spherical magnetic nanoparticles suspended in a Newtonian fluid and under applied shear and constant magnetic fields is studied through rotational brownian dynamics simulations. Simulation results are compared with the predictions of suspension-scale models based on three magnetization relaxation equations. Excellent agreement is observed between simulation results and the predictions of an equation due to Martsenyuk, Raikher, and Shliomis. Good qualitative agreement is observed with predictions of other equations, although these models fail to accurately predict the magnitude and shear rate dependence of the magnetic-field-dependent effective viscosity. Finally, simulation results over a wide range of conditions are collapsed into master curves using a Mason number defined based on the balance of hydrodynamic and magnetic torques. PMID:21230393

  9. A comprehensive study of the magnetic, structural, and transport properties of the III-V ferromagnetic semiconductor InMnP

    SciTech Connect

    Khalid, M.; Hübner, R.; Baehtz, C.; Skorupa, W.; Zhou, Shengqiang; Gao, Kun; Helm, M.; Weschke, E.; Gordan, O.; Salvan, G.; Zahn, D. R. T.

    2015-01-28

    The manganese induced magnetic, electrical, and structural modification in InMnP epilayers, prepared by Mn ion implantation and pulsed laser annealing, are investigated in the following work. All samples exhibit clear hysteresis loops and strong spin polarization at the Fermi level. The degree of magnetization, the Curie temperature, and the spin polarization depend on the Mn concentration. The bright-field transmission electron micrographs show that InP samples become almost amorphous after Mn implantation but recrystallize after pulsed laser annealing. We did not observe an insulator-metal transition in InMnP up to a Mn concentration of 5 at. %. Instead all InMnP samples show insulating characteristics up to the lowest measured temperature. Magnetoresistance results obtained at low temperatures support the hopping conduction mechanism in InMnP. We find that the Mn impurity band remains detached from the valence band in InMnP up to 5 at. % Mn doping. Our findings indicate that the local environment of Mn ions in InP is similar to GaMnAs, GaMnP, and InMnAs; however, the electrical properties of these Mn implanted III-V compounds are different. This is one of the consequences of the different Mn binding energy in these compounds.

  10. Semiconductor sensor embedded microfluidic chip for protein biomarker detection using a bead-based immunoassay combined with deoxyribonucleic acid strand labeling.

    PubMed

    Lin, Yen-Heng; Peng, Po-Yu

    2015-04-15

    Two major issues need to be addressed in applying semiconductor biosensors to detecting proteins in immunoassays. First, the length of the antibody on the sensor surface surpasses the Debye lengths (approximately 1 nm, in normal ionic strength solution), preventing certain specifically bound proteins from being tightly attached to the sensor surface. Therefore, these proteins do not contribute to the sensor's surface potential change. Second, these proteins carry a small charge and can be easily affected by the pH of the surrounding solution. This study proposes a magnetic bead-based immunoassay using a secondary antibody to label negatively charged DNA fragments for signal amplification. An externally imposed magnetic force attaches the analyte tightly to the sensor surface, thereby effectively solving the problem of the analyte protein's distance to the sensor surface surpassing the Debye lengths. In addition, a normal ion intensity buffer can be used without dilution for the proposed method. Experiments revealed that the sensitivity can be improved by using a longer DNA fragment for labeling and smaller magnetic beads as solid support for the antibody. By using a 90 base pair DNA label, the signal was 15 times greater than that without labeling. In addition, by using a 120 nm magnetic bead, a minimum detection limit of 12.5 ng mL(-1) apolipoprotein A1 can be measured. Furthermore, this study integrates a semiconductor sensor with a microfluidic chip. With the help of microvalves and micromixers in the chip, the length of the mixing step for each immunoassay has been reduced from 1h to 20 min, and the sample volume has been reduced from 80 μL to 10 μL. In practice, a protein biomarker in a urinary bladder cancer patient's urine was successfully measured using this technique. This study provides a convenient and effective method to measure protein using a semiconductor sensor.

  11. Tuning magnetism by biaxial strain in native ZnO.

    PubMed

    Peng, Chengxiao; Wang, Yuanxu; Cheng, Zhenxiang; Zhang, Guangbiao; Wang, Chao; Yang, Gui

    2015-07-01

    Magnetic ZnO, one of the most important diluted magnetic semiconductors (DMS), has attracted great scientific interest because of its possible technological applications in optomagnetic devices. Magnetism in this material is usually delicately tuned by the doping level, dislocations, and local structures. The rational control of magnetism in ZnO is a highly attractive approach for practical applications. Here, the tuning effect of biaxial strain on the d(0) magnetism of native imperfect ZnO is demonstrated through first-principles calculations. Our calculation results show that strain conditions have little effect on the defect formation energy of Zn and O vacancies in ZnO, but they do affect the magnetism significantly. For a cation vacancy, increasing the compressive strain will obviously decrease its magnetic moment, while tensile strain cannot change the moment, which remains constant at 2 μB. For a singly charged anion vacancy, however, the dependence of the magnetic moment on strain is opposite to that of the Zn vacancy. Furthermore, the ferromagnetic state is always present, irrespective of the strain type, for ZnO with two zinc vacancies, 2VZns. A large tensile strain is favorable for improving the Curie temperature and realizing room temperature ferromagnetism for ZnO-based native semiconductors. For ZnO with two singly charged oxygen vacancies, 2Vs, no ferromagnetic ordering can be observed. Our work points the way to the rational design of materials beyond ZnO with novel non-intrinsic functionality by simply tuning the strain in a thin film form.

  12. Dilute Acid and Autohydrolysis Pretreatment

    NASA Astrophysics Data System (ADS)

    Yang, Bin; Wyman, Charles E.

    Exposure of cellulosic biomass to temperatures of about 120-210°C can remove most of the hemicellulose and produce cellulose-rich solids from which high glucose yields are possible with cellulase enzymes. Furthermore, the use of dilute sulfuric acid in this pretreatment operation can increase recovery of hemicellulose sugars substantially to about 85-95% of the maximum possible versus only about 65% if no acid is employed. The use of small-diameter tubes makes it possible to employ high solids concentrations similar to those preferred for commercial operations, with rapid heat-up, good temperature control, and accurate closure of material balances. Mixed reactors can be employed to pretreat larger amounts of biomass than possible in such small-diameter tubes, but solids concentrations are limited to about 15% or less to provide uniform temperatures. Pretreatment of large amounts of biomass at high solids concentrations is best carried out using direct steam injection and rapid pressure release, but closure of material balances in such “steam gun” devices is more difficult. Although flow of water alone or containing dilute acid is not practical commercially, such flow-through configurations provide valuable insight into biomass deconstruction kinetics not possible in the batch tubes, mixed reactors, or steam gun systems.

  13. A Microgravity Helium Dilution Cooler

    NASA Technical Reports Server (NTRS)

    Roach, Pat R.; Sperans, Joel (Technical Monitor)

    1994-01-01

    We are developing a He-3-He-4 dilution cooler to operate in microgravity. It uses charcoal adsorption pumps and heaters for its operation; it has no moving parts. It currently operates cyclically to well below 0.1 K and we have designed a version to operate continuously. We expect that the continuous version will be able to provide the long-duration cooling that many experiments need at temperatures down to 0.040 K. More importantly, such a dilution cooler could provide the precooling that enables the use of adiabatic demagnetization techniques that can reach temperatures below 0.001 K. At temperatures below 0.002 K many fascinating microgravity experiments on superfluid He-3 become possible. Among the possibilities are: research into a superfluid He-3 gyroscope, study of the nucleation of the B-phase of superfluid He-3 when the sample is floating out of contact with walls, study of the anisotropy of the surface tension of the B-phase, and NMR experiments on tiny free-floating clusters of superfluid He-3 atoms that should model the shell structure of nuclei.

  14. Semiconductor active plasmonics

    NASA Astrophysics Data System (ADS)

    Mendach, Stefan; Nötzel, Richard

    2013-12-01

    Plasmonics is a research area in nanophotonics attracting increasing interest due to the potential applications in sensing and detecting, sub-wavelength confinement of light, integrated circuits, and many others. In particular, when plasmonic structures such as metal nanostructures or highly doped semiconductor particles are combined with active semiconductor materials and nanostructures, novel exciting physics and applications arise. This special section on semiconductor active plasmonics covers several of the most important and complementary directions in the field. First is the modification of the optical properties of a semiconductor nanostructure due to the close proximity of a metallic film or nanostructure. These arise from the formation hybrid plasmon/exciton states and may lead to enhanced spontaneous emission rates, directional far field emission patterns, strong coupling phenomena, and many more. Second is the realization of sub-wavelength scale nanolasers by coupling a semiconductor gain medium with a plasmonic metallic cavity. Particular emphasis is given on the major technical challenges in the fabrication of these nanolasers, such as device patterning, surface passivation, and metal deposition. While the above topics address mainly active structures and devices operating in the visible or near-infrared wavelength region, in the third, the enhanced THz extinction by periodic arrays of semiconductor particles is discussed. This is based on the build-up of surface plasmon resonances in the doped semiconductor particles which can be resonantly coupled and widely tuned by the carrier density in the semiconductor. We believe these highly diverse aspects give insight into the wide variety of new physics and applications that semiconductor active plasmonics is offering. Finally, we would like to thank the IOP editorial staff, in particular Alice Malhador, for their support, and we would also like to thank the contributors for their efforts and participation

  15. Introduction to Semiconductor Devices

    NASA Astrophysics Data System (ADS)

    Brennan, Kevin F.

    2005-03-01

    This volume offers a solid foundation for understanding the most important devices used in the hottest areas of electronic engineering today, from semiconductor fundamentals to state-of-the-art semiconductor devices in the telecommunications and computing industries. Kevin Brennan describes future approaches to computing hardware and RF power amplifiers, and explains how emerging trends and system demands of computing and telecommunications systems influence the choice, design and operation of semiconductor devices. In addition, he covers MODFETs and MOSFETs, short channel effects, and the challenges faced by continuing miniaturization. His book is both an excellent senior/graduate text and a valuable reference for practicing engineers and researchers.

  16. Valence-state Model of Strain-dependent Mn L2,3 X-ray Magnetic Circular Dichroism from Ferromagnetic Semiconductors

    SciTech Connect

    van der Laan, G.; Edmonds, K. W.; Arenholz, E.; Farley, N. R. S.; Gallagher, B. L.

    2010-03-30

    We present a valence-state model to explain the characteristics of a recently observed pre-edge feature in Mn L{sub 3} x-ray magnetic circular dichroism (XMCD) of ferromagnetic (Ga,Mn)As and (Al,Ga,Mn)As thin films. The prepeak XMCD shows a uniaxial anisotropy, contrary to the cubic symmetry of the main structures induced by the crystalline electric field. Reversing the strain in the host lattice reverses the sign of the uniaxial anisotropy. With increasing carrier localization, the prepeak height increases, indicating an increasing 3d character of the hybridized holes. Hence, the feature is ascribed to transitions from the Mn 2p core level to unoccupied p-d hybridized valence states. The characteristics of the prepeak are readily reproduced by the model calculation taking into account the symmetry of the strain-, spin-orbit-, and exchange-split valence states around the zone center.

  17. Isotopically controlled semiconductors

    SciTech Connect

    Haller, E.E.

    2004-11-15

    A review of recent research involving isotopically controlled semiconductors is presented. Studies with isotopically enriched semiconductor structures experienced a dramatic expansion at the end of the Cold War when significant quantities of enriched isotopes of elements forming semiconductors became available for worldwide collaborations. Isotopes of an element differ in nuclear mass, may have different nuclear spins and undergo different nuclear reactions. Among the latter, the capture of thermal neutrons which can lead to neutron transmutation doping, can be considered the most important one for semiconductors. Experimental and theoretical research exploiting the differences in all the properties has been conducted and will be illustrated with selected examples. Manuel Cardona, the longtime editor-in-chief of Solid State Communications has been and continues to be one of the major contributors to this field of solid state physics and it is a great pleasure to dedicate this review to him.

  18. Desynchronization in diluted neural networks

    SciTech Connect

    Zillmer, Ruediger; Livi, Roberto; Politi, Antonio; Torcini, Alessandro

    2006-09-15

    The dynamical behavior of a weakly diluted fully inhibitory network of pulse-coupled spiking neurons is investigated. Upon increasing the coupling strength, a transition from regular to stochasticlike regime is observed. In the weak-coupling phase, a periodic dynamics is rapidly approached, with all neurons firing with the same rate and mutually phase locked. The strong-coupling phase is characterized by an irregular pattern, even though the maximum Lyapunov exponent is negative. The paradox is solved by drawing an analogy with the phenomenon of 'stable chaos', i.e., by observing that the stochasticlike behavior is 'limited' to an exponentially long (with the system size) transient. Remarkably, the transient dynamics turns out to be stationary.

  19. Band anticrossing in dilute nitrides

    SciTech Connect

    Shan, W.; Yu, K.M.; Walukiewicz, W.; Wu, J.; Ager III, J.W.; Haller, E.E.

    2003-12-23

    Alloying III-V compounds with small amounts of nitrogen leads to dramatic reduction of the fundamental band-gap energy in the resulting dilute nitride alloys. The effect originates from an anti-crossing interaction between the extended conduction-band states and localized N states. The interaction splits the conduction band into two nonparabolic subbands. The downward shift of the lower conduction subband edge is responsible for the N-induced reduction of the fundamental band-gap energy. The changes in the conduction band structure result in significant increase in electron effective mass and decrease in the electron mobility, and lead to a large enhance of the maximum doping level in GaInNAs doped with group VI donors. In addition, a striking asymmetry in the electrical activation of group IV and group VI donors can be attributed to mutual passivation process through formation of the nearest neighbor group-IV donor nitrogen pairs.

  20. SLM based semiconductor maskwriter

    NASA Astrophysics Data System (ADS)

    Diez, Steffen; Jehle, Achim

    2015-09-01

    The high-end semiconductor mask fabrication is dominated by e-beam technology. But still more than 50% of all semiconductor masks are produced by laser writers. The current laser writers are based on the same technology that was used 25 years ago. They are reliable and fast but not very economical. Heidelberg Instruments has developed a new economical and fast laser writer based on the latest technologies.

  1. An X- and Q-band Fe3+ EPR study of nanoparticles of magnetic semiconductor Zn1-xFexO

    NASA Astrophysics Data System (ADS)

    Misra, Sushil K.; Andronenko, S. I.; Thurber, A.; Punnoose, A.; Nalepa, A.

    2014-08-01

    EPR studies on two types of nanoparticles of Fe3+ doped, 0.1-10%, ZnO, NL and QJ, prepared using similar chemical hydrolysis methods, in diethylene glycol, and in denatured ethanol solutions, respectively, were carried out at X-band (~9.5 GHz) at 77 K and at Q-band (~34.0 GHz) at 10, 80, and 295 K. To interpret the experimental results, EPR spectra were simulated by exact diagonalization of the spin-Hamiltonian matrix to identify the Fe ions at different magnetically active sites in these samples. The simulation for NL samples revealed that they contained (i) Fe3+ ions, which substituted for Zn ions, the zero-field splitting (ZFS) parameter which has a large distribution over the sample due to oxygen vacancies in the second coordination sphere; (ii) EPR signal from surface oxygen defects; and (iii) ferromagnetically (FM) coupled Fe ions with concentration of Fe more than 1%. The EPR spectra for QJ samples are very different from those for NL samples, exhibiting only rather intense FM EPR lines. The FM and EPR spectra in NL and/or QJ samples are found to vary strongly with differences in the surface morphology of nanoparticles.

  2. Strained-bond semiconductors

    NASA Astrophysics Data System (ADS)

    Dow, John D.

    1994-05-01

    Theories of strained-bond semiconductors and superconductors have been developed that promise to have significant impact on future electronic devices of interest to the Air Force. These include: (1) development of a theory of high-temperature superconductivity based on the idea of strained-layer superlattices, (2) elucidation of the physics of doping in Type-2 semiconductor superlattices, which is now central to the development of high-speed field-effect transistors, (3) a theory of dimerization and reconstruction on (001) semiconductor surfaces, (4) theory of Mobius transforms as applied to physics and remote sensing, (5) new understanding of how defects affect the vibrational properties of semiconductors, (6) new methods of efficiently computing the trajectories of atoms in semiconductors by a priori molecular dynamics, (7) elucidation of the criteria affecting quantum-well luminescence from Si, (8) models of the effects of vacancies in large-gap Al(x)Ga(1-x)N alloys, (9) physics of rare-earth-doped silicon, (10) models of Co adsorption to silicon surfaces, (11) theories of how defects affect the properties of large band-gap superlattices, and (12) models of the effects of electronic structure on the properties of semiconductors.

  3. Dilution in single pass arc welds

    SciTech Connect

    DuPont, J.N.; Marder, A.R.

    1996-06-01

    A study was conducted on dilution of single pass arc welds of type 308 stainless steel filler metal deposited onto A36 carbon steel by the plasma arc welding (PAW), gas tungsten arc welding (GTAW), gas metal arc welding (GMAW), and submerged arc welding (SAW) processes. Knowledge of the arc and melting efficiency was used in a simple energy balance to develop an expression for dilution as a function of welding variables and thermophysical properties of the filler metal and substrate. Comparison of calculated and experimentally determined dilution values shows the approach provides reasonable predictions of dilution when the melting efficiency can be accurately predicted. The conditions under which such accuracy is obtained are discussed. A diagram is developed from the dilution equation which readily reveals the effect of processing parameters on dilution to aid in parameter optimization.

  4. Spin Splitting and Spin Current in Strained Bulk Semiconductors

    SciTech Connect

    Bernevig, B.Andrei; Zhang, Shou-Cheng; /Stanford U., Phys. Dept.

    2010-01-15

    We present a theory for two recent experiments in bulk strained semiconductors and show that a new, previously overlooked, strain spin-orbit coupling term may play a fundamental role. We propose simple experiments that could clarify the origin of strain-induced spin-orbit coupling terms in inversion asymmetric semiconductors. We predict that a uniform magnetization parallel to the electric field will be induced in the samples studied in for specific directions of the applied electric field. We also propose special geometries to detect spin currents in strained semiconductors.

  5. MAGNETS

    DOEpatents

    Hofacker, H.B.

    1958-09-23

    This patent relates to nmgnets used in a calutron and more particularly to means fur clamping an assembly of magnet coils and coil spacers into tightly assembled relation in a fluid-tight vessel. The magnet comprises windings made up of an assembly of alternate pan-cake type coils and spacers disposed in a fluid-tight vessel. At one end of the tank a plurality of clamping strips are held firmly against the assembly by adjustable bolts extending through the adjacent wall. The foregoing arrangement permits taking up any looseness which may develop in the assembly of coils and spacers.

  6. Raman spectra of Cu{sub 2}B{sup II}C{sup IV}X{sub 4}{sup VI} magnetic quaternary semiconductor compounds with tetragonal stannite type structure

    SciTech Connect

    Rincón, C. Quintero, M.; Power, Ch.; Moreno, E.; Quintero, E.; Morocoima, M.; Henao, J. A.; Macías, M. A.

    2015-05-28

    A comparative study of the Raman spectra of Cu{sub 2}B{sup II}C{sup IV}S{sub 4}{sup VI} and Cu{sub 2}B{sup II}C{sup IV}Se{sub 4}{sup VI}(where B = Mn or Fe) magnetic quaternary semiconductor compounds with stannite-type structure (I4{sup ¯}2m) has been done. Most of the fourteen Raman lines expected for these materials were observed in the spectra. The two strongest lines observed have been assigned to the IR inactive A{sub 1}{sup 1} and A{sub 1}{sup 2} stannite modes that originated from the motion of the S or Se anion around the Cu and C{sup IV} cations remaining at rest. The shift in the frequency of these two lines of about 150 cm{sup −1} to lower energies observed in Cu{sub 2}B{sup II}C{sup IV}Se{sub 4}{sup VI} compounds as compared to those in Cu{sub 2}B{sup II}C{sup IV}S{sub 4}{sup VI} ones, can then be explained as due to the anion mass effect. Based on the fact that values of these frequencies depend mainly on anion mass and bond-stretching forces between nearest-neighbor atoms, the vibrational frequencies v{sup ¯}(A{sub 1}{sup 2}) and v{sup ¯}(A{sub 1}{sup 2}) of both modes for several Cu{sub 2}B{sup II}C{sup IV}X{sub 4}{sup VI} stannite compounds (where X = S, Se, or Te) very close to the experimental data reported for these materials were calculated from a simple model that relates these stretching forces to the anion-cation bond-distances.

  7. Method of doping a semiconductor

    DOEpatents

    Yang, Chiang Y.; Rapp, Robert A.

    1983-01-01

    A method for doping semiconductor material. An interface is established between a solid electrolyte and a semiconductor to be doped. The electrolyte is chosen to be an ionic conductor of the selected impurity and the semiconductor material and electrolyte are jointly chosen so that any compound formed from the impurity and the semiconductor will have a free energy no lower than the electrolyte. A potential is then established across the interface so as to allow the impurity ions to diffuse into the semiconductor. In one embodiment the semiconductor and electrolyte may be heated so as to increase the diffusion coefficient.

  8. 40 CFR 1065.240 - Dilution air and diluted exhaust flow meters.

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... interval. You may use the difference between a diluted exhaust flow meter and a dilution air meter to.... We recommend that you use a diluted exhaust flow meter that meets the specifications in Table 1 of... verification in § 1065.307 and the calibration and verifications in § 1065.340 and § 1065.341. You may use...

  9. 40 CFR 1065.240 - Dilution air and diluted exhaust flow meters.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... interval. You may use the difference between a diluted exhaust flow meter and a dilution air meter to.... We recommend that you use a diluted exhaust flow meter that meets the specifications in Table 1 of... verification in § 1065.307 and the calibration and verifications in § 1065.340 and § 1065.341. You may use...

  10. 40 CFR 1065.240 - Dilution air and diluted exhaust flow meters.

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... interval. You may use the difference between a diluted exhaust flow meter and a dilution air meter to.... We recommend that you use a diluted exhaust flow meter that meets the specifications in Table 1 of... verification in § 1065.307 and the calibration and verifications in § 1065.340 and § 1065.341. You may use...

  11. 40 CFR 1065.240 - Dilution air and diluted exhaust flow meters.

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... interval. You may use the difference between a diluted exhaust flow meter and a dilution air meter to.... We recommend that you use a diluted exhaust flow meter that meets the specifications in Table 1 of... verification in § 1065.307 and the calibration and verifications in § 1065.340 and § 1065.341. You may use...

  12. Electrocoalescence based serial dilution of microfluidic droplets.

    PubMed

    Bhattacharjee, Biddut; Vanapalli, Siva A

    2014-07-01

    Dilution of microfluidic droplets where the concentration of a reagent is incrementally varied is a key operation in drop-based biological analysis. Here, we present an electrocoalescence based dilution scheme for droplets based on merging between moving and parked drops. We study the effects of fluidic and electrical parameters on the dilution process. Highly consistent coalescence and fine resolution in dilution factor are achieved with an AC signal as low as 10 V even though the electrodes are separated from the fluidic channel by insulator. We find that the amount of material exchange between the droplets per coalescence event is high for low capillary number. We also observe different types of coalescence depending on the flow and electrical parameters and discuss their influence on the rate of dilution. Overall, we find the key parameter governing the rate of dilution is the duration of coalescence between the moving and parked drop. The proposed design is simple incorporating the channel electrodes in the same layer as that of the fluidic channels. Our approach allows on-demand and controlled dilution of droplets and is simple enough to be useful for assays that require serial dilutions. The approach can also be useful for applications where there is a need to replace or wash fluid from stored drops.

  13. Electrocoalescence based serial dilution of microfluidic droplets

    PubMed Central

    Bhattacharjee, Biddut; Vanapalli, Siva A.

    2014-01-01

    Dilution of microfluidic droplets where the concentration of a reagent is incrementally varied is a key operation in drop-based biological analysis. Here, we present an electrocoalescence based dilution scheme for droplets based on merging between moving and parked drops. We study the effects of fluidic and electrical parameters on the dilution process. Highly consistent coalescence and fine resolution in dilution factor are achieved with an AC signal as low as 10 V even though the electrodes are separated from the fluidic channel by insulator. We find that the amount of material exchange between the droplets per coalescence event is high for low capillary number. We also observe different types of coalescence depending on the flow and electrical parameters and discuss their influence on the rate of dilution. Overall, we find the key parameter governing the rate of dilution is the duration of coalescence between the moving and parked drop. The proposed design is simple incorporating the channel electrodes in the same layer as that of the fluidic channels. Our approach allows on-demand and controlled dilution of droplets and is simple enough to be useful for assays that require serial dilutions. The approach can also be useful for applications where there is a need to replace or wash fluid from stored drops. PMID:25379096

  14. Search for ferromagnetic ordering in Pd doped wide band gap semiconductors GaN and ZnO

    NASA Astrophysics Data System (ADS)

    Kessler, P.; Müller, K.; Geruschke, T.; Timmers, H.; Byrne, A. P.; Vianden, R.

    2010-04-01

    GaN and ZnO are possible candidates for dilute magnetic semiconductors with Curie temperatures above room temperature. Doping with transition metals like Co, Mn or Fe could be a simple way to create such systems. The perturbed angular correlation (PAC) probe 100Pd/100Rh is isoelectronic to cobalt and therefore a perfect tool to investigate the incorporation of transition metals into these compounds as well as the influence of other impurities on internal magnetic fields. The (0001) and (10bar{1}10) surfaces of ZnO single crystals, freestanding GaN films, and GaN thin films (6 μm) on sapphire substrates were recoil-implanted with the 100Pd/100Rh probe. The probe was produced using the fusion evaporation reaction 92Zr(12C, 4n)100Pd at a beam energy of 69 MeV. Subsequently, the incorporation of the probe was studied by PAC spectroscopy during an isochronal annealing program. First results without and with an applied external magnetic field are indicative of a strongly disturbed lattice vicinity of Pd impurities in both hosts. No signs of spontaneous ferromagnetic ordering were observed.

  15. Photoinduced superconductivity in semiconductors

    NASA Astrophysics Data System (ADS)

    Goldstein, Garry; Aron, Camille; Chamon, Claudio

    2015-02-01

    We show that optically pumped semiconductors can exhibit superconductivity. We illustrate this phenomenon in the case of a two-band semiconductor tunnel-coupled to broad-band reservoirs and driven by a continuous wave laser. More realistically, we also show that superconductivity can be induced in a two-band semiconductor interacting with a broad-spectrum light source. We furthermore discuss the case of a three-band model in which the middle band replaces the broad-band reservoirs as the source of dissipation. In all three cases, we derive the simple conditions on the band structure, electron-electron interaction, and hybridization to the reservoirs that enable superconductivity. We compute the finite superconducting pairing and argue that the mechanism can be induced through both attractive and repulsive interactions and is robust to high temperatures.

  16. Superconductivity in doped semiconductors

    NASA Astrophysics Data System (ADS)

    Bustarret, E.

    2015-07-01

    A historical survey of the main normal and superconducting state properties of several semiconductors doped into superconductivity is proposed. This class of materials includes selenides, tellurides, oxides and column-IV semiconductors. Most of the experimental data point to a weak coupling pairing mechanism, probably phonon-mediated in the case of diamond, but probably not in the case of strontium titanate, these being the most intensively studied materials over the last decade. Despite promising theoretical predictions based on a conventional mechanism, the occurrence of critical temperatures significantly higher than 10 K has not been yet verified. However, the class provides an enticing playground for testing theories and devices alike.

  17. GUARD RING SEMICONDUCTOR JUNCTION

    DOEpatents

    Goulding, F.S.; Hansen, W.L.

    1963-12-01

    A semiconductor diode having a very low noise characteristic when used under reverse bias is described. Surface leakage currents, which in conventional diodes greatly contribute to noise, are prevented from mixing with the desired signal currents. A p-n junction is formed with a thin layer of heavily doped semiconductor material disposed on a lightly doped, physically thick base material. An annular groove cuts through the thin layer and into the base for a short distance, dividing the thin layer into a peripheral guard ring that encircles the central region. Noise signal currents are shunted through the guard ring, leaving the central region free from such currents. (AEC)

  18. Semiconductor laser diode

    SciTech Connect

    Amann, M.C.

    1982-09-28

    A semiconductor laser diode is disclosed with a connection electrode consisting of a chromium/gold alloy on a highly-doped gallium arsenide layer. The gallium arsenide layer is strip shaped and overlies a further lesser doped layer of gallium aluminum arsenide. The chromium/gold contact has a low-resistance junction only in the region of the more highly doped layer so that a strip shaped restriction of the current path occurs in the semiconductor body. Accordingly, a laser-active zone which is only strip-shaped is achieved.

  19. Semiconductor surface protection material

    NASA Technical Reports Server (NTRS)

    Packard, R. D. (Inventor)

    1973-01-01

    A method and a product for protecting semiconductor surfaces is disclosed. The protective coating material is prepared by heating a suitable protective resin with an organic solvent which is solid at room temperature and converting the resulting solution into sheets by a conventional casting operation. Pieces of such sheets of suitable shape and thickness are placed on the semiconductor areas to be coated and heat and vacuum are then applied to melt the sheet and to drive off the solvent and cure the resin. A uniform adherent coating, free of bubbles and other defects, is thus obtained exactly where it is desired.

  20. Phase transitions in pure and dilute thin ferromagnetic films

    NASA Astrophysics Data System (ADS)

    Korneta, W.; Pytel, Z.

    1983-10-01

    The mean-field model of a thin ferromagnetic film where the nearest-neighbor exchange coupling in surface layers can be different from that inside the film is considered. The phase diagram, equations for the second-order phase-transition lines, and the spontaneous magnetization profiles near the phase transitions are given. It is shown that there is no extra-ordinary transition in a thin film. If the thickness of the film tends to infinity the well-known results for the mean-field model of a semi-infinite ferromagnet are obtained. The generalization for disordered dilute thin ferromagnetic films and semi-infinite ferromagnets is also given.

  1. Tuning electronic and magnetic properties of blue phosphorene by doping Al, Si, As and Sb atom: A DFT calculation

    NASA Astrophysics Data System (ADS)

    Sun, Minglei; Hao, Yitong; Ren, Qingqiang; Zhao, Yiming; Du, Yanhui; Tang, Wencheng

    2016-09-01

    Using density functional theory computations, we systematically investigated the structural, electronic and magnetic properties of Al, Si, As and Sb doped blue phosphorene. The electronic properties of blue phosphorene can be effectively turned by substitutional doping. Especially, Al and Sb lead to an indirect-to-direct-gap transition. The interaction between the impurity and P atoms should be responsible for the transition. In addition, blue phosphorene can exhibit dilute magnetic semiconductor property with doping of Si impurity. The magnetic moment in Si-substituted blue phosphorene predominantly originates from the hybridization of Si-s pz and P-pz orbitals. These results provide many useful applications of blue phosphorene in electronics, optoelectronics and spintronics.

  2. Spin-glass behaviors in carrier polarity controlled Fe3-xTixO4 semiconductor thin films

    NASA Astrophysics Data System (ADS)

    Yamahara, H.; Seki, M.; Adachi, M.; Takahashi, M.; Nasu, H.; Horiba, K.; Kumigashira, H.; Tabata, H.

    2015-08-01

    Carrier-type control of spin-glass (cluster spin-glass) is studied in order to engineer basic magnetic semiconductor elements using the memory functions of spin-glass. A key of carrier-polarity control in magnetite is the valence engineering between Fe(II) and Fe(III) that is achieved by Ti(IV) substitution. Single phases of (001)-oriented Fe3-xTixO4 thin films have been obtained on spinel MgAl2O4 substrates by pulsed laser deposition. Thermoelectric power measurements reveal that Ti-rich films (x = 0.8) show p-type conduction, while Ti-poor films (x = 0.6-0.75) show n-type conduction. The systematic Fe(III) reduction to Fe(II) followed by Ti(IV) substitution in the octahedral sublattice is confirmed by the X-ray absorption spectra. All of the Fe3-xTixO4 films (x = 0.6-0.8) exhibit ferrimagnetism above room temperature. Next, the spin-glass behaviors of Ti-rich Fe2.2Ti0.8O4 film are studied, since this magnetically diluted system is expected to exhibit the spin-glass behaviors. The DC magnetization and AC susceptibility measurements for the Ti-rich Fe2.2Ti0.8O4 film reveal the presence of the spin glass phase. Thermal- and magnetic-field-history memory effects are observed and are attributed to the long time-decay nature of remanent magnetization. The detailed analysis of the time-dependent thermoremanent magnetization reveals the presence of the cluster spin glass state.

  3. Underestimation of access flow by ultrasound dilution flow measurements

    NASA Astrophysics Data System (ADS)

    Bos, Clemens; Smits, Johannes H. M.; Zijlstra, Jan J.; Blankestijn, Peter J.; Bakker, Chris J. G.; Viergever, Max A.

    2002-02-01

    For hemodialysis access surveillance, flow measurements are increasingly considered important because they identify accesses at risk of thrombosis. Usually these flow measurements are performed with the ultrasound dilution technique. In a previous patient study it was observed that the resulting flow values were systematically low as compared to magnetic resonance flow measurements, but a satisfactory explanation was lacking. In the present study, we will demonstrate by hemodynamic calculations and in vitro experiments that this discrepancy can be explained by a temporary reduction of the access flow rate, caused by the reversed needle configuration during ultrasound dilution flow measurements. In this configuration, blood is injected retrogressively at one needle and flow between the needles is increased, causing an increased dissipation of energy. The proposed explanation is subsequently confirmed in a patient with a loop graft, by measuring the blood velocity by Doppler ultrasound as a function of reversed dialyzer flow rate. Apart from the ultrasound dilution technique, these findings are applicable to other recently proposed methods for measuring access flow that employ the reversed needle configuration.

  4. Superconductivity in the ferromagnetic semiconductor samarium nitride

    NASA Astrophysics Data System (ADS)

    Anton, E.-M.; Granville, S.; Engel, A.; Chong, S. V.; Governale, M.; Zülicke, U.; Moghaddam, A. G.; Trodahl, H. J.; Natali, F.; Vézian, S.; Ruck, B. J.

    2016-07-01

    Conventional wisdom expects that making semiconductors ferromagnetic requires doping with magnetic ions and that superconductivity cannot coexist with magnetism. However, recent concerted efforts exploring new classes of materials have established that intrinsic ferromagnetic semiconductors exist and that certain types of strongly correlated metals can be ferromagnetic and superconducting at the same time. Here we show that the trifecta of semiconducting behavior, ferromagnetism, and superconductivity can be achieved in a single material. Samarium nitride (SmN) is a well-characterized intrinsic ferromagnetic semiconductor, hosting strongly spin-ordered 4 f electrons below a Curie temperature of 27 K. We have now observed that it also hosts a superconducting phase below 4 K when doped to electron concentrations above 1021cm-3 . The large exchange splitting of the conduction band in SmN favors equal-spin triplet pairing with p -wave symmetry. Significantly, superconductivity is enhanced in superlattices of gadolinium nitride (GdN) and SmN. An analysis of the robustness of such a superconducting phase against disorder leads to the conclusion that the 4 f bands are crucial for superconductivity, making SmN a heavy-fermion-type superconductor.

  5. Curved Two-Dimensional Electron Systems in Semiconductor Nanoscrolls

    NASA Astrophysics Data System (ADS)

    Peters, Karen; Mendach, Stefan; Hansen, Wolfgang

    The perfect control of strain and layer thickness in epitaxial semiconductor bilayers is employed to fabricate semiconductor nanoscrolls with precisely adjusted scroll diameter ranging between a few nanometers and several tens of microns. Furthermore, semiconductor heteroepitaxy allows us to incorporate quantum objects such as quantum wells, quantum dots, or modulation doped low-dimensional carrier systems into the nanoscrolls. In this review, we summarize techniques that we have developed to fabricate semiconductor nanoscrolls with well-defined location, orientation, geometry, and winding number. We focus on magneto-transport studies of curved two-dimensional electron systems in such nanoscrolls. An externally applied magnetic field results in a strongly modulated normal-to-surface component leading to magnetic barriers, reflection of edge channels, and local spin currents. The observations are compared to finite-element calculations and discussed on the basis of simple models taking into account the influence of a locally modulated state density on the conductivity. In particular, it is shown that the observations in high magnetic fields can be well described considering the transport in edge channels according to the Landauer-Büttiker model if additional magnetic field induced channels aligned along magnetic barriers are accounted for.

  6. Kansas Advanced Semiconductor Project

    SciTech Connect

    Baringer, P.; Bean, A.; Bolton, T.; Horton-Smith, G.; Maravin, Y.; Ratra, B.; Stanton, N.; von Toerne, E.; Wilson, G.

    2007-09-21

    KASP (Kansas Advanced Semiconductor Project) completed the new Layer 0 upgrade for D0, assumed key electronics projects for the US CMS project, finished important new physics measurements with the D0 experiment at Fermilab, made substantial contributions to detector studies for the proposed e+e- international linear collider (ILC), and advanced key initiatives in non-accelerator-based neutrino physics.

  7. Chemically Derivatized Semiconductor Photoelectrodes.

    ERIC Educational Resources Information Center

    Wrighton, Mark S.

    1983-01-01

    Deliberate modification of semiconductor photoelectrodes to improve durability and enhance rate of desirable interfacial redox processes is discussed for a variety of systems. Modification with molecular-based systems or with metals/metal oxides yields results indicating an important role for surface modification in devices for fundamental study…

  8. Amorphous semiconductor solar cell

    DOEpatents

    Dalal, Vikram L.

    1981-01-01

    A solar cell comprising a back electrical contact, amorphous silicon semiconductor base and junction layers and a top electrical contact includes in its manufacture the step of heat treating the physical junction between the base layer and junction layer to diffuse the dopant species at the physical junction into the base layer.

  9. Physics of Organic Semiconductors

    NASA Astrophysics Data System (ADS)

    Brütting, Wolfgang

    2004-05-01

    Organic semiconductors are of steadily growing interest as active components in electronics and optoelectronics. Due to their flexibility, low cost and ease-of-production they represent a valid alternative to conventional inorganic semiconductor technology in a number of applications, such as flat panel displays and illumination, plastic integrated circuits or solar energy conversion. Although first commercial applications of this technology are being realized nowadays, there is still the need for a deeper scientific understanding in order to achieve optimum device performance.This special issue of physica status solidi (a) tries to give an overview of our present-day knowledge of the physics behind organic semiconductor devices. Contributions from 17 international research groups cover various aspects of this field ranging from the growth of organic layers and crystals, their electronic properties at interfaces, their photophysics and electrical transport properties to the application of these materials in different devices like organic field-effect transistors, photovoltaic cells and organic light-emitting diodes.Putting together such a special issue one soon realizes that it is simply impossible to fully cover the whole area of organic semiconductors. Nevertheless, we hope that the reader will find the collection of topics in this issue useful for getting an up-to-date review of a field which is still developing very dynamically.

  10. Polarized light scattering from individual semiconductor nanowires

    NASA Astrophysics Data System (ADS)

    Wu, Jian

    This thesis addresses the light scattering, particularly Raman and Rayleigh scattering from quasi one dimensional semiconductor nanowires, such as Zn1-xMnxS and GaP nanowires. Many of the results stem from measurements of individual wires. Four original works are presented in the thesis: (1) The growth of diluted magnetic semiconductor (DMS) Zn1-xMnxS (0≤x<0.6) nanowires using a three-zone furnace and two solid sources is reported (Chapter 2.4). The vibrational properties of the DMS nanowires with different Zn/Mn ratios were studied by correlating their Raman scattering spectra with the composition and structure measured by x-Ray energy dispersive spectroscopy (XEDS) and selected area electron diffraction (SAD). We find that the transverse optical (TO) phonon band disappears at the lowest Mn concentrations, while the longitudinal optical (LO) phonon band position was found insensitive to x. Three additional Raman bands were observed between the ZnS q=0 TO and LO phonons when Mn atoms were present in the nanowires (Chapter 5); (2) Polarized Raman scattering on individual crystalline GaP nanowires with diameters 40 individual crystalline GaP nanowires with diameters 40semiconductor nanowires and furthermore, the antenna effects are essential to the analysis of all electro-optic effects in small diameter filaments (Chapter 7); (3) Results of polarized Rayleigh back-scattering studies are

  11. Parity lifetime of bound states in a proximitized semiconductor nanowire

    NASA Astrophysics Data System (ADS)

    Higginbotham, A. P.; Albrecht, S. M.; Kiršanskas, G.; Chang, W.; Kuemmeth, F.; Krogstrup, P.; Jespersen, T. S.; Nygård, J.; Flensberg, K.; Marcus, C. M.

    2015-12-01

    Quasiparticle excitations can compromise the performance of superconducting devices, causing high-frequency dissipation, decoherence in Josephson qubits, and braiding errors in proposed Majorana-based topological quantum computers. Quasiparticle dynamics have been studied in detail in metallic superconductors but remain relatively unexplored in semiconductor-superconductor structures, which are now being intensely pursued in the context of topological superconductivity. To this end, we use a system comprising a gate-confined semiconductor nanowire with an epitaxially grown superconductor layer, yielding an isolated, proximitized nanowire segment. We identify bound states in the semiconductor by means of bias spectroscopy, determine the characteristic temperatures and magnetic fields for quasiparticle excitations, and extract a parity lifetime (poisoning time) of the bound state in the semiconductor exceeding 10 ms.

  12. Anisotropic magnetoresistance in an antiferromagnetic semiconductor.

    PubMed

    Fina, I; Marti, X; Yi, D; Liu, J; Chu, J H; Rayan-Serrao, C; Suresha, S; Shick, A B; Zelezný, J; Jungwirth, T; Fontcuberta, J; Ramesh, R

    2014-01-01

    Recent studies in devices comprising metal antiferromagnets have demonstrated the feasibility of a novel spintronic concept in which spin-dependent phenomena are governed by an antiferromagnet instead of a ferromagnet. Here we report experimental observation of the anisotropic magnetoresistance in an antiferromagnetic semiconductor Sr2IrO4. Based on ab initio calculations, we associate the origin of the phenomenon with large anisotropies in the relativistic electronic structure. The antiferromagnet film is exchange coupled to a ferromagnet, which allows us to reorient the antiferromagnet spin-axis in applied magnetic fields via the exchange spring effect. We demonstrate that the semiconducting nature of our AFM electrode allows us to perform anisotropic magnetoresistance measurements in the current-perpendicular-to-plane geometry without introducing a tunnel barrier into the stack. Temperature-dependent measurements of the resistance and anisotropic magnetoresistance highlight the large, entangled tunabilities of the ordinary charge and spin-dependent transport in a spintronic device utilizing the antiferromagnet semiconductor.

  13. Optical orientation of hole magnetic polarons in (Cd,Mn)Te/(Cd,Mn,Mg)Te quantum wells

    NASA Astrophysics Data System (ADS)

    Zhukov, E. A.; Kusrayev, Yu. G.; Kavokin, K. V.; Yakovlev, D. R.; Debus, J.; Schwan, A.; Akimov, I. A.; Karczewski, G.; Wojtowicz, T.; Kossut, J.; Bayer, M.

    2016-06-01

    The optically induced spin polarization in (Cd,Mn)Te/(Cd,Mn,Mg)Te diluted-magnetic-semiconductor quantum wells is investigated by means of picosecond pump-probe Kerr rotation. At 1.8 K temperature, additionally to the oscillatory signals from photoexcited electrons and manganese spins precessing about an external magnetic field, a surprisingly long-lived (up to 60 ns) nonoscillating spin polarization is detected. This polarization is related to optical orientation of equilibrium magnetic polarons involving resident holes. The suggested mechanism for the optical orientation of the equilibrium magnetic polarons indicates that the detected polaron dynamics originates from unexcited magnetic polarons. The polaron spin dynamics is controlled by the anisotropic spin structure of the heavy hole resulting in a freezing of the polaron magnetic moment in one of the two stable states oriented along the structure growth axis. Spin relaxation between these states is prohibited by a potential barrier, which depends on temperature and magnetic field. The magnetic polaron relaxation is accelerated with increasing temperature and in magnetic field.

  14. Additional compound semiconductor nanowires for photonics

    NASA Astrophysics Data System (ADS)

    Ishikawa, F.

    2016-02-01

    GaAs related compound semiconductor heterostructures are one of the most developed materials for photonics. Those have realized various photonic devices with high efficiency, e. g., lasers, electro-optical modulators, and solar cells. To extend the functions of the materials system, diluted nitride and bismide has been paid attention over the past decade. They can largely decrease the band gap of the alloys, providing the greater tunability of band gap and strain status, eventually suppressing the non-radiative Auger recombinations. On the other hand, selective oxidation for AlGaAs is a vital technique for vertical surface emitting lasers. That enables precisely controlled oxides in the system, enabling the optical and electrical confinement, heat transfer, and mechanical robustness. We introduce the above functions into GaAs nanowires. GaAs/GaAsN core-shell nanowires showed clear redshift of the emitting wavelength toward infrared regime. Further, the introduction of N elongated the carrier lifetime at room temperature indicating the passivation of non-radiative surface recombinations. GaAs/GaAsBi nanowire shows the redshift with metamorphic surface morphology. Selective and whole oxidations of GaAs/AlGaAs core-shell nanowires produce semiconductor/oxide composite GaAs/AlGaOx and oxide GaOx/AlGaOx core-shell nanowires, respectively. Possibly sourced from nano-particle species, the oxide shell shows white luminescence. Those property should extend the functions of the nanowires for their application to photonics.

  15. Muon hyperfine fields in iron and its dilute alloys

    NASA Technical Reports Server (NTRS)

    Stronach, C. E.; Squire, K. R.; Arrott, A. S.; Patterson, B. D.; Heinrich, B.; Lankford, W. F.; Fiory, A. T.; Kossler, W. J.; Singh, J. J.

    1981-01-01

    The temperature dependence of the interstitial magnetic field, B, as determined by the rotation of the spin of the muon, has been measured for dilute polycrystalline iron alloys with Mo, Ti, and Nb additions over a temperature range of 240 to 633 K. In all cases the behaviors differ from one another and from the Fe(Al) alloys previously studied. B, which is negative with respect to the magnetization, is increased in magnitude by Al and Mo, and decreased greatly by Ti. The addition of Nb creates a two-phase alloy from which the role of heterogeneity and/or strain on B in iron can be assessed. If the temperature dependence of the hyperfine field extracted from B for Fe(Mo) alloys is interpreted on the model previously used to discuss the Fe(Al) data, then the muon must be attracted to the Mo atom while repelled by the Al atoms as the temperature decreases.

  16. High-throughput ab-initio dilute solute diffusion database

    PubMed Central

    Wu, Henry; Mayeshiba, Tam; Morgan, Dane

    2016-01-01

    We demonstrate automated generation of diffusion databases from high-throughput density functional theory (DFT) calculations. A total of more than 230 dilute solute diffusion systems in Mg, Al, Cu, Ni, Pd, and Pt host lattices have been determined using multi-frequency diffusion models. We apply a correction method for solute diffusion in alloys using experimental and simulated values of host self-diffusivity. We find good agreement with experimental solute diffusion data, obtaining a weighted activation barrier RMS error of 0.176 eV when excluding magnetic solutes in non-magnetic alloys. The compiled database is the largest collection of consistently calculated ab-initio solute diffusion data in the world. PMID:27434308

  17. Growth Mechanism and Some Properties of Cd1-xMnx Se Semimagnetic Semiconductor Thin Films

    NASA Astrophysics Data System (ADS)

    Karande, V. S.; Mane, S. H.; Pujari, V. B.; Deshmukh, Lalasaheb P.

    2003-11-01

    (Cd, Mn) Se dilute semiconductor or semimagnetic semiconductors have recently became the focus of intense research due to their interesting combination of magnetic and semiconducting properties, and are employed in a variety of devices including solar cells, gas sensors etc. A series of thin films of this material, Cd1 - xMnxSe (0 ≤ x ≤ 0.5), were therefore synthesized onto precleaned amorphous glass substrates using a solution growth technique. The sources of cadmium (Cd2+) and manganese (Mn2+) were aqueous solutions of cadmium sulphate and manganese sulphate, and selenium (Se2-) was extracted from a reflux of sodium selenosulphite. The different deposition parameters such as temperature, time of deposition, speed of mechanical churning, pH of the reaction mixture etc were optimized to yield good quality deposits. The as-grown samples were thin, relatively uniform, smooth and tightly adherent to the substrate support. The colour of the deposits changed from deep red-orange to yellowish-orange as the composition parameter, x, was varied from 0 to 0.5. The terminal layer thickness decreased with increasing value of, x. The optical energy gap decreased from 1.84 eV to 1.34 eV for the chang e of x from 0 to 0.5. The coefficient of optical absorption a is of the order of 104 - 105 cm-1 and the type of transition (m \\cong 0.5) is of the band-to-band direct type. The dc electrical conductivities were measured at room temperature and in the temperature range 300 K - 500 K. It was observed that the room temperature electrical conductivity increased with the composition parameter x up to 0.1, gradually decreasing thereafter. The thermo power measurements showed n-type conduction in these films.

  18. Molecular dissociation in dilute gas

    SciTech Connect

    Renfrow, S.N.; Duggan, J.L.; McDaniel, F.D. |

    1999-06-01

    The charge state distributions (CSD) produced during molecular dissociation are important to both Trace Element Accelerator Mass Spectrometry (TEAMS) and the ion implantation industry. The CSD of 1.3{endash}1.7 MeV SiN{sup +}, SiMg{sup +}, SiMn{sup +}, and SiZn{sup +} molecules have been measured for elements that do not form atomic negative ions (N, Mg, Mn, and Zn) using a NEC Tandem Pelletron accelerator. The molecules were produced in a Cs sputter negative ion source, accelerated, magnetically analyzed, and then passed through an N{sub 2} gas cell. The neutral and charged breakups where analyzed using an electrostatic deflector and measured with particle detectors. Equilibrium CSD were determined and comparisons made between molecular and atomic ion data. {copyright} {ital 1999 American Institute of Physics.}

  19. Calibration graphs in isotope dilution mass spectrometry.

    PubMed

    Pagliano, Enea; Mester, Zoltán; Meija, Juris

    2015-10-01

    Isotope-based quantitation is routinely employed in chemical measurements. Whereas most analysts seek for methods with linear theoretical response functions, a unique feature that distinguishes isotope dilution from many other analytical methods is the inherent possibility for a nonlinear theoretical response curve. Most implementations of isotope dilution calibration today either eliminate the nonlinearity by employing internal standards with markedly different molecular weight or they employ empirical polynomial fits. Here we show that the exact curvature of any isotope dilution curve can be obtained from three-parameter rational function, y = f(q) = (a0 + a1q)/(1 + a2q), known as the Padé[1,1] approximant. The use of this function allows eliminating an unnecessary source of error in isotope dilution analysis when faced with nonlinear calibration curves. In addition, fitting with Padé model can be done using linear least squares.

  20. Helium Dilution Cryocooler for Space Applications

    NASA Technical Reports Server (NTRS)

    Roach, Pat; Hogan, Robert (Technical Monitor)

    2001-01-01

    NASA's New Millenium Program Space Technology presents the Helium Dilution Cryocooler for Space Applications. The topics include: 1) Capability; 2) Applications; and 3) Advantages. This paper is in viewgraph form.

  1. Flux balance analysis accounting for metabolite dilution.

    PubMed

    Benyamini, Tomer; Folger, Ori; Ruppin, Eytan; Shlomi, Tomer

    2010-01-01

    Flux balance analysis is a common method for predicting steady-state flux distributions within metabolic networks, accounting for the growth demand for the synthesis of a predefined set of essential biomass precursors. Ignoring the growth demand for the synthesis of intermediate metabolites required for balancing their dilution leads flux balance analysis to false predictions in some cases. Here, we present metabolite dilution flux balance analysis, which addresses this problem, resulting in improved metabolic phenotype predictions. PMID:20398381

  2. Flux balance analysis accounting for metabolite dilution.

    PubMed

    Benyamini, Tomer; Folger, Ori; Ruppin, Eytan; Shlomi, Tomer

    2010-01-01

    Flux balance analysis is a common method for predicting steady-state flux distributions within metabolic networks, accounting for the growth demand for the synthesis of a predefined set of essential biomass precursors. Ignoring the growth demand for the synthesis of intermediate metabolites required for balancing their dilution leads flux balance analysis to false predictions in some cases. Here, we present metabolite dilution flux balance analysis, which addresses this problem, resulting in improved metabolic phenotype predictions.

  3. Estimation method for serial dilution experiments.

    PubMed

    Ben-David, Avishai; Davidson, Charles E

    2014-12-01

    Titration of microorganisms in infectious or environmental samples is a corner stone of quantitative microbiology. A simple method is presented to estimate the microbial counts obtained with the serial dilution technique for microorganisms that can grow on bacteriological media and develop into a colony. The number (concentration) of viable microbial organisms is estimated from a single dilution plate (assay) without a need for replicate plates. Our method selects the best agar plate with which to estimate the microbial counts, and takes into account the colony size and plate area that both contribute to the likelihood of miscounting the number of colonies on a plate. The estimate of the optimal count given by our method can be used to narrow the search for the best (optimal) dilution plate and saves time. The required inputs are the plate size, the microbial colony size, and the serial dilution factors. The proposed approach shows relative accuracy well within ±0.1log10 from data produced by computer simulations. The method maintains this accuracy even in the presence of dilution errors of up to 10% (for both the aliquot and diluent volumes), microbial counts between 10(4) and 10(12) colony-forming units, dilution ratios from 2 to 100, and plate size to colony size ratios between 6.25 to 200.

  4. Minimal Coital Dilution in Accra, Ghana

    PubMed Central

    Jenness, Samuel M.; Biney, Adriana A. E.; Ampofo, William Kwabena; Dodoo, F. Nii-Amoo; Cassels, Susan

    2015-01-01

    Background Coital dilution, the reduction in the coital frequency per partner when an additional ongoing partner is added, may reduce the transmission potential of partnership concurrency for HIV and other sexually transmitted infections. Empirical estimates of dilution, especially dilution of sexual acts unprotected by condoms, are needed to inform prevention research. Methods Sexually active adults in Accra, Ghana were recruited in a multi-stage household probability sample. Degree (number of ongoing partners), total acts, and unprotected acts were measured retrospectively for each month in the past year through an event-history calendar. Random effects negative binomial models estimated the association between degree and coital frequency. Results Compared to person-months with a single partner (monogamy), 2.06 times as many total acts and 1.94 times as many unprotected acts occurred in months with 2 partners. In months with 3 partners, 2.90 times as many total acts and 2.39 times as many unprotected acts occurred compared to monogamous months. Total acts but not unprotected acts also declined with partnership duration. Conclusions No dilution was observed for total acts with up to three concurrent partners, but a small amount of dilution was observed for unprotected acts for months with multiple concurrencies. This suggests moderate selective condom use in months with multiple concurrencies. The implications of the observed dilution for future HIV transmission must be investigated with mathematical models. PMID:25622062

  5. Gluconeogenesis from labeled carbon: estimating isotope dilution

    SciTech Connect

    Kelleher, J.K.

    1986-03-01

    To estimate the rate of gluconeogenesis from steady-state incorporation of labeled 3-carbon precursors into glucose, isotope dilution must be considered so that the rate of labeling of glucose can be quantitatively converted to the rate of gluconeogenesis. An expression for the value of this isotope dilution can be derived using mathematical techniques and a model of the tricarboxylic acid (TCA) cycle. The present investigation employs a more complex model than that used in previous studies. This model includes the following pathways that may affect the correction for isotope dilution: 1) flux of 3-carbon precursor to the oxaloacetate pool via acetyl-CoA and the TCA cycle; 2) flux of 4- or 5-carbon compounds into the TCA cycle; 3) reversible flux between oxaloacetate (OAA) and pyruvate and between OAA and fumarate; 4) incomplete equilibrium between OAA pools; and 5) isotope dilution of 3-carbon tracers between the experimentally measured pool and the precursor for the TCA-cycle OAA pool. Experimental tests are outlined which investigators can use to determine whether these pathways are significant in a specific steady-state system. The study indicated that flux through these five pathways can significantly affect the correction for isotope dilution. To correct for the effects of these pathways an alternative method for calculating isotope dilution is proposed using citrate to relate the specific activities of acetyl-CoA and OAA.

  6. EDITORIAL: Semiconductor lasers: the first fifty years Semiconductor lasers: the first fifty years

    NASA Astrophysics Data System (ADS)

    Calvez, S.; Adams, M. J.

    2012-09-01

    achievements in the June 1987 Special Issue of IEEE Journal of Quantum Electronics. The Millennium Issue of IEEE Journal of Selected Topics in Quantum Electronics presented a further set of articles on historical aspects of the subject as well as a 'snapshot' of current research in June 2000. It is not the intention here to duplicate any of this historical material that is already available, but rather to complement it with personal recollections from researchers who were involved in laser development in the USA, France, Russia and the UK. Hence, in addition to fascinating accounts of the discovery of the theoretical condition for stimulated emission from semiconductors and of the pioneering work at IBM, there are two complementary views of the laser research at the Lebedev Institute, and personal insights into the developments at STL and at Bell Laboratories. These are followed by an account of the scientific and technological connections between the early pioneering breakthroughs and the commercialisation of semiconductor laser products. Turning to the papers from today's researchers, there is coverage of many of the current 'hot' topics including quantum cascade lasers, mid-infrared lasers, high-power lasers, the exciting developments in understanding and exploiting the nonlinear dynamics of lasers, and photonic integrated circuits with extremely high communication data capacity, as well as reports of recent progress on laser materials such as dilute nitrides and bismides, photonic crystals, quantum dots and organic semiconductors. Thanks are due to Jarlath McKenna for sterling support from IOP Publishing and to Peter Blood for instigating this Special Issue and inviting us to serve as Guest Editors.

  7. 2012 DEFECTS IN SEMICONDUCTORS GORDON RESEARCH CONFERENCE, AUGUST 12-17, 2012

    SciTech Connect

    GLASER, EVAN

    2012-08-17

    The meeting shall strive to develop and further the fundamental understanding of defects and their roles in the structural, electronic, optical, and magnetic properties of bulk, thin film, and nanoscale semiconductors and device structures. Point and extended defects will be addressed in a broad range of electronic materials of particular current interest, including wide bandgap semiconductors, metal-oxides, carbon-based semiconductors (e.g., diamond, graphene, etc.), organic semiconductors, photovoltaic/solar cell materials, and others of similar interest. This interest includes novel defect detection/imaging techniques and advanced defect computational methods.

  8. Semiconductor radiation detector

    DOEpatents

    Patt, Bradley E.; Iwanczyk, Jan S.; Tull, Carolyn R.; Vilkelis, Gintas

    2002-01-01

    A semiconductor radiation detector is provided to detect x-ray and light photons. The entrance electrode is segmented by using variable doping concentrations. Further, the entrance electrode is physically segmented by inserting n+ regions between p+ regions. The p+ regions and the n+ regions are individually biased. The detector elements can be used in an array, and the p+ regions and the n+ regions can be biased by applying potential at a single point. The back side of the semiconductor radiation detector has an n+ anode for collecting created charges and a number of p+ cathodes. Biased n+ inserts can be placed between the p+ cathodes, and an internal resistor divider can be used to bias the n+ inserts as well as the p+ cathodes. A polysilicon spiral guard can be implemented surrounding the active area of the entrance electrode or surrounding an array of entrance electrodes.

  9. Semiconductor eutectic solar cell

    NASA Astrophysics Data System (ADS)

    Yue, A. S.; Yu, J. G.

    1986-12-01

    Two-phase semiconducting eutectics are potential device-materials. Of these, the SnSe-SnSe2 eutectic was chosen for studies in detail because it consists of multi-p/n-layers of SnSe and SnSe2 semiconductors. Since plasma frequency has not been detected in its infrared reflectance spectrum up to 40 micrometers of wavelength, it suggests that the SnSe-SnSe2 eutectic is a nondegenerate semiconductor. As-grown SnSe2 single crystals have hexagonal crystallographic structure and show n-type conductivity. Polycrystalline SnSe and SnSe2 films have been successfully prepared in vacuum using a close-space-vapor transport technique.

  10. Light amplification using semiconductors

    SciTech Connect

    Dupuis, R.D.

    1987-06-01

    During the summer of 1953, John von Neumann discussed his ideas concerning light amplification using semiconductors with Edward Teller. In September of that year, von Neumann sent a manuscript containing his ideas and calculations on this subject to Teller for his comments. To the best of our knowledge, von Neumann did not take time to work further on these ideas, and the manuscript remained unpublished. These previously unpublished writings of John von Neumann on the subject of light amplification in semiconductors are printed as a service to the laser community. While von Neumann's original manuscript and his letter to Teller are available to anyone who visits the Library of Congress, it is much more convenient to have this paper appear in an archival journal.

  11. High Temperature Superconductor/Semiconductor Hybrid Microwave Devices and Circuits

    NASA Technical Reports Server (NTRS)

    Romanofsky, Robert R.; Miranda, Felix A.

    1999-01-01

    Contents include following: film deposition technique; laser ablation; magnetron sputtering; sequential evaporation; microwave substrates; film characterization at microwave frequencies; complex conductivity; magnetic penetration depth; surface impedance; planar single-mode filters; small antennas; antenna arrays phase noise; tunable oscillations; hybrid superconductor/semiconductor receiver front ends; and noise modeling.

  12. Computational Nano-materials Design for Spin-Currents Control in Semiconductor Nano-spintronics

    NASA Astrophysics Data System (ADS)

    Katayama-Yoshida, Hiroshi; Fukushima, Tetsuya; Dinh, Van An; Sato, Kazunori

    2008-03-01

    We design the different exchange mechanism like Zener's double exchange, Zener's p-d exchange and super-exchange in dilute magnetic semiconductors (DMS) by ab initio calculations. We obtain a universal trend for the exchange interactions [1]. We show that self-organized spinodal nano-decomposition (Dairiseki- Phase) offers the functionality to have high Curie temperatures[2]. We show that spinodal nano-decomposition under layer-by-layer crystal growth condition (2D) leads to quasi-one dimensional nano-structures (Konbu-Phase) with highly anisotropic shape and high TC[2]. We design a spin-currents- controlled 100 Tera bits/icnh^2, Tera Hz switching, and non- volatile MRAM without Si-CMOS based on Konbu-Phase [2]. In addition to the conventional Peltier effect, we propose a colossal thermoelectric-cooling power based on the adiabatic spin-entropy expansion in a Konbu-Phase [3]. [1] B. Belhadaji et al., J. Phys.-Condens. Matter, 19 (2007) 436227. [2] H. Katayama-Yoshida et al., Phys. stat. sol. (a) 204 (2007) 15. [3] H. Katayama-Yoshida et al., Jpn. J. Appl. Phys. 46 (2007) L777.

  13. X-ray photoemission study of manganese thin films deposited on a layered semiconductor

    NASA Astrophysics Data System (ADS)

    Mirabella, F.; Parkinson, B. A.; Ghijsen, J.

    2004-02-01

    Germanium sulphide (GeS) and tin diselenide (SnSe2) present anisotropic properties due to their layered crystal structures. These crystals are composed of atomic layers interacting with each other by van der Waals forces only. Recently these materials have been used to prepare a new diluted magnetic semiconductor (DMS) by substituting some Ge or Sn atoms by manganese in the crystal lattice, forming Ge1-xMnxS and Sn1-xMnxSe2. To compare Mn behaviour within the layered crystals, Mn/GeS and Mn/SnSe2 thin films have been grown and investigated in situ by X-ray induced photoemission. Here is reported the XPS analysis of in situ grown Mn/SnSe2 for coverage ranging from sub-monolayer to thin films. The properties of these films were investigated from the structural and reactivity point of view. XPS measurements suggest that an Mn-Sn alloy is formed at the interface and that Mn atoms first deposit as an atomic netting pattern dictated by the typical structure of the SnSe2 (001) surface.

  14. Isotopically controlled semiconductors

    SciTech Connect

    Haller, Eugene E.

    2006-06-19

    The following article is an edited transcript based on the Turnbull Lecture given by Eugene E. Haller at the 2005 Materials Research Society Fall Meeting in Boston on November 29, 2005. The David Turnbull Lectureship is awarded to recognize the career of a scientist who has made outstanding contributions to understanding materials phenomena and properties through research, writing, and lecturing, as exemplified by the life work of David Turnbull. Haller was named the 2005 David Turnbull Lecturer for his 'pioneering achievements and leadership in establishing the field of isotopically engineered semiconductors; for outstanding contributions to materials growth, doping and diffusion; and for excellence in lecturing, writing, and fostering international collaborations'. The scientific interest, increased availability, and technological promise of highly enriched isotopes have led to a sharp rise in the number of experimental and theoretical studies with isotopically controlled semiconductor crystals. This article reviews results obtained with isotopically controlled semiconductor bulk and thin-film heterostructures. Isotopic composition affects several properties such as phonon energies, band structure, and lattice constant in subtle, but, for their physical understanding, significant ways. Large isotope-related effects are observed for thermal conductivity in local vibrational modes of impurities and after neutron transmutation doping. Spectacularly sharp photoluminescence lines have been observed in ultrapure, isotopically enriched silicon crystals. Isotope multilayer structures are especially well suited for simultaneous self- and dopant-diffusion studies. The absence of any chemical, mechanical, or electrical driving forces makes possible the study of an ideal random-walk problem. Isotopically controlled semiconductors may find applications in quantum computing, nanoscience, and spintronics.

  15. Tunable semiconductor lasers

    NASA Technical Reports Server (NTRS)

    Taghavi-Larigani, Shervin (Inventor); Vanzyl, Jakob J. (Inventor); Yariv, Amnon (Inventor)

    2006-01-01

    Tunable semiconductor lasers are disclosed requiring minimized coupling regions. Multiple laser embodiments employ ring resonators or ring resonator pairs using only a single coupling region with the gain medium are detailed. Tuning can be performed by changing the phase of the coupling coefficient between the gain medium and a ring resonator of the laser. Another embodiment provides a tunable laser including two Mach-Zehnder interferometers in series and a reflector coupled to a gain medium.

  16. Semiconductor Ion Implanters

    NASA Astrophysics Data System (ADS)

    MacKinnon, Barry A.; Ruffell, John P.

    2011-06-01

    In 1953 the Raytheon CK722 transistor was priced at 7.60. Based upon this, an Intel Xeon Quad Core processor containing 820,000,000 transistors should list at 6.2 billion! Particle accelerator technology plays an important part in the remarkable story of why that Intel product can be purchased today for a few hundred dollars. Most people of the mid twentieth century would be astonished at the ubiquity of semiconductors in the products we now buy and use every day. Though relatively expensive in the nineteen fifties they now exist in a wide range of items from high-end multicore microprocessors like the Intel product to disposable items containing `only' hundreds or thousands like RFID chips and talking greeting cards. This historical development has been fueled by continuous advancement of the several individual technologies involved in the production of semiconductor devices including Ion Implantation and the charged particle beamlines at the heart of implant machines. In the course of its 40 year development, the worldwide implanter industry has reached annual sales levels around 2B, installed thousands of dedicated machines and directly employs thousands of workers. It represents in all these measures, as much and possibly more than any other industrial application of particle accelerator technology. This presentation discusses the history of implanter development. It touches on some of the people involved and on some of the developmental changes and challenges imposed as the requirements of the semiconductor industry evolved.

  17. Semiconductor Ion Implanters

    SciTech Connect

    MacKinnon, Barry A.; Ruffell, John P.

    2011-06-01

    In 1953 the Raytheon CK722 transistor was priced at $7.60. Based upon this, an Intel Xeon Quad Core processor containing 820,000,000 transistors should list at $6.2 billion. Particle accelerator technology plays an important part in the remarkable story of why that Intel product can be purchased today for a few hundred dollars. Most people of the mid twentieth century would be astonished at the ubiquity of semiconductors in the products we now buy and use every day. Though relatively expensive in the nineteen fifties they now exist in a wide range of items from high-end multicore microprocessors like the Intel product to disposable items containing 'only' hundreds or thousands like RFID chips and talking greeting cards. This historical development has been fueled by continuous advancement of the several individual technologies involved in the production of semiconductor devices including Ion Implantation and the charged particle beamlines at the heart of implant machines. In the course of its 40 year development, the worldwide implanter industry has reached annual sales levels around $2B, installed thousands of dedicated machines and directly employs thousands of workers. It represents in all these measures, as much and possibly more than any other industrial application of particle accelerator technology. This presentation discusses the history of implanter development. It touches on some of the people involved and on some of the developmental changes and challenges imposed as the requirements of the semiconductor industry evolved.

  18. Synchronous semiconductor memory device

    SciTech Connect

    Onno, C.; Hirata, M.

    1989-11-21

    This patent describes a synchronous semiconductor memory device. It comprises: first latch means for latching a write command in synchronism with clock signal; second latch means for latching a write data in synchronism with the clock signal and for outputting two write process signals based on the write data latched thereby; pulse generating means for generating an internal write pulse signal based on the write command latched by the first latch means. The internal write pulse signal having a semiconductor memory device; write control means supplied with the internal write pulse signal and the write process signals for controlling write and read operations of the synchronous semiconductor memory device; memory means for storing the write data latched by the second latch means; and noise preventing means coupled to the second latch means and the write control means for supplying the write process signals to the write control means only in the write mode responsive to the internal write pulse signal and for setting the write process signals to fixed potentials during a time other than the write mode.

  19. Optical gain in 1.3-μm electrically driven dilute nitride VCSOAs

    PubMed Central

    2014-01-01

    We report the observation of room-temperature optical gain at 1.3 μm in electrically driven dilute nitride vertical cavity semiconductor optical amplifiers. The gain is calculated with respect to injected power for samples with and without a confinement aperture. At lower injected powers, a gain of almost 10 dB is observed in both samples. At injection powers over 5 nW, the gain is observed to decrease. For nearly all investigated power levels, the sample with confinement aperture gives slightly higher gain. PMID:24417791

  20. Mn concentration and quantum size effects on spin-polarized transport through CdMnTe based magnetic resonant tunneling diode.

    PubMed

    Mnasri, S; Abdi-Ben Nasrallahl, S; Sfina, N; Lazzari, J L; Saïd, M

    2012-11-01

    Theoretical studies on spin-dependent transport in magnetic tunneling diodes with giant Zeeman splitting of the valence band are carried out. The studied structure consists of two nonmagnetic layers CdMgTe separated by a diluted magnetic semiconductor barrier CdMnTe, the hole is surrounded by two p-doped CdTe layers. Based on the parabolic valence band effective mass approximation and the transfer matrix method, the magnetization and the current densities for holes with spin-up and spin-down are studied in terms of the Mn concentration, the well and barrier thicknesses as well as the voltage. It is found that, the current densities depend strongly on these parameters and by choosing suitable values; this structure can be a good spin filter. Such behaviors are originated from the enhancement and suppression in the spin-dependent resonant states. PMID:23421288