Science.gov

Sample records for dilute magnetic semiconductor

  1. Diluted magnetic semiconductor nanowires exhibiting magnetoresistance

    DOEpatents

    Yang, Peidong; Choi, Heonjin; Lee, Sangkwon; He, Rongrui; Zhang, Yanfeng; Kuykendal, Tevye; Pauzauskie, Peter

    2011-08-23

    A method for is disclosed for fabricating diluted magnetic semiconductor (DMS) nanowires by providing a catalyst-coated substrate and subjecting at least a portion of the substrate to a semiconductor, and dopant via chloride-based vapor transport to synthesize the nanowires. Using this novel chloride-based chemical vapor transport process, single crystalline diluted magnetic semiconductor nanowires Ga.sub.1-xMn.sub.xN (x=0.07) were synthesized. The nanowires, which have diameters of .about.10 nm to 100 nm and lengths of up to tens of micrometers, show ferromagnetism with Curie temperature above room temperature, and magnetoresistance up to 250 Kelvin.

  2. Terahertz radiation from magnetic excitations in diluted magnetic semiconductors.

    PubMed

    Rungsawang, R; Perez, F; Oustinov, D; Gómez, J; Kolkovsky, V; Karczewski, G; Wojtowicz, T; Madéo, J; Jukam, N; Dhillon, S; Tignon, J

    2013-04-26

    We probed, in the time domain, the THz electromagnetic radiation originating from spins in CdMnTe diluted magnetic semiconductor quantum wells containing high-mobility electron gas. Taking advantage of the efficient Raman generation process, the spin precession was induced by low power near-infrared pulses. We provide a full theoretical first-principles description of spin-wave generation, spin precession, and of emission of THz radiation. Our results open new perspectives for improved control of the direct coupling between spin and an electromagnetic field, e.g., by using semiconductor technology to insert the THz sources in cavities or pillars.

  3. EDITORIAL: Focus on Dilute Magnetic Semiconductors FOCUS ON DILUTE MAGNETIC SEMICONDUCTORS

    NASA Astrophysics Data System (ADS)

    Chambers, Scott A.; Gallagher, Bryan

    2008-05-01

    This focus issue of New Journal of Physics is devoted to the materials science of dilute magnetic semiconductors (DMS). A DMS is traditionally defined as a diamagnetic semiconductor doped with a few to several atomic per cent of some transition metal with unpaired d electrons. Several kinds of dopant-dopant interactions can in principle couple the dopant spins leading to a ferromagnetic ground state in a dilute magnetic system. These include superexchange, which occurs principally in oxides and only between dopants with one intervening oxygen, and double exchange, in which dopants of different formal charges exchange an electron. In both of these mechanisms, the ferromagnetic alignment is not critically dependent on free carriers in the host semiconductor because exchange occurs via bonds. A third mechanism, discovered in the last few years, involves electrons associated with lattice defects that can apparently couple dopant spins. This mechanism is not well understood. Finally, the most desirable mechanism is carrier-mediated exchange interaction in which the dopant spins are coupled by itinerant electrons or holes in the host semiconductor. This mechanism introduces a fundamental link between magnetic and electrical transport properties and offers the possibility of new spintronic functionalities. In particular electrical gate control of ferromagnetism and the use of spin polarized currents to carry signals for analog and digital applications. The spin light emitting diode is a prototypical device of this kind that has been extensively used to characterize the extent of spin polarization in the active light emitting semiconductor heterostructure. The prototypical carrier mediated ferromagnetic DMS is Mn-doped GaAs. This and closely related narrow gap III-V materials have been very extensively studied. Their properties are generally quite well understood and they have led to important insights into fundamental properties of ferromagnetic systems with strong spin

  4. Orbital magnetization in dilute ferromagnetic semiconductors

    NASA Astrophysics Data System (ADS)

    Śliwa, Cezary; Dietl, Tomasz

    2014-07-01

    The relationship between the modern and classical Landau's approach to carrier orbital magnetization is studied theoretically within the envelope function approximation, taking ferromagnetic (Ga,Mn)As as an example. It is shown that while the evaluation of hole magnetization within the modern theory does not require information on the band structure in a magnetic field, the number of basis wave functions must be much larger than in the Landau approach to achieve the same quantitative accuracy. A numerically efficient method is proposed, which takes advantages of these two theoretical schemes. The computed magnitude of orbital magnetization is in accord with experimental values obtained by x-ray magnetic circular dichroism in (III,Mn)V compounds. The direct effect of the magnetic field on the hole spectrum is studied too, and employed to interpret a dependence of the Coulomb blockade maxima on the magnetic field in a single electron transistor with a (Ga,Mn)As gate.

  5. XPS Study of Some Dilute Magnetic Semiconductors

    NASA Astrophysics Data System (ADS)

    Singhal, R. K.; Sharma, S. C.; Jakhar, N.

    2011-10-01

    In search for room temperature ferromagnetism (RTFM) in nominally doped oxides like ZnO, CeO2, TiO2 etc., several research attempts have been made in recent years. Unfortunately, these could not reach definite conclusions owing to controversial reports and the mechanism of FM ordering continues to remain illusive. We have synthesized Cr and Ni doped (5% each) ZnO bulk samples and studied their structural, electronic and magnetic properties. The magnetization and x-ray photoelectron spectroscopic (XPS) studies on these samples are presented and the electronic structure findings are correlated with magnetic properties.

  6. Uniform Doping in Quantum-Dots-Based Dilute Magnetic Semiconductor.

    PubMed

    Saha, Avijit; Shetty, Amitha; Pavan, A R; Chattopadhyay, Soma; Shibata, Tomohiro; Viswanatha, Ranjani

    2016-07-07

    Effective manipulation of magnetic spin within a semiconductor leading to a search for ferromagnets with semiconducting properties has evolved into an important field of dilute magnetic semiconductors (DMS). Although a lot of research is focused on understanding the still controversial origin of magnetism, efforts are also underway to develop new materials with higher magnetic temperatures for spintronics applications. However, so far, efforts toward quantum-dots(QDs)-based DMS materials are plagued with problems of phase separation, leading to nonuniform distribution of dopant ions. In this work, we have developed a strategy to synthesize highly crystalline, single-domain DMS system starting from a small magnetic core and allowing it to diffuse uniformly inside a thick CdS semiconductor matrix and achieve DMS QDs. X-ray absorption fine structure (XAFS) spectroscopy and energy-dispersive X-ray spectroscopy-scanning transmission electron microscopy (STEM-EDX) indicates the homogeneous distribution of magnetic impurities inside the semiconductor QDs leading to superior magnetic property. Further, the versatility of this technique was demonstrated by obtaining ultra large particles (∼60 nm) with uniform doping concentration as well as demonstrating the high quality magnetic response.

  7. Scanning Hall probe microscopy of a diluted magnetic semiconductor

    SciTech Connect

    Kweon, Seongsoo; Samarth, Nitin; Lozanne, Alex de

    2009-05-01

    We have measured the micromagnetic properties of a diluted magnetic semiconductor as a function of temperature and applied field with a scanning Hall probe microscope built in our laboratory. The design philosophy for this microscope and some details are described. The samples analyzed in this work are Ga{sub 0.94}Mn{sub 0.06}As films grown by molecular beam epitaxy. We find that the magnetic domains are 2-4 mum wide and fairly stable with temperature. Magnetic clusters are observed above T{sub C}, which we ascribe to MnAs defects too small and sparse to be detected by a superconducting quantum interference device magnetometer.

  8. Dilute Magnetic Semiconductors from Electrodeposited ZnO Nanowires

    SciTech Connect

    Athavan, Nadarajah; Konenkamp, R.

    2011-02-02

    We present experimental results on the magnetic properties of doped ZnO nanowires grown at 80 8C in electrodeposition. We show that impurities such as Al, Mn, Co, and Cu can be incorporated in the nanowires by adding the corresponding metal salts to the electrolyte solution. At concentration levels of a few atomic percent we find the impurity concentration in the solid to be approximately proportional to the precursor concentration in solution. ZnO nanowrires doped with Cu, Co, and Mn show superparamagnetic response at room temperature, while undoped and Al-doped wires show no discernible magnetic response. The results indicate that with Cu, Mn, and Co doping dilute magnetic semiconductors can be prepared.

  9. Magnetic Exchange Interactions in Long Range Ordered Diluted Organometallic Semiconductors

    NASA Astrophysics Data System (ADS)

    Rawat, Naveen; Manning, Lane; Furis, Madalina

    2015-03-01

    Exchange Interactions in diluted organometallic crystalline thin films of Phthalocyanines made of a mixture of organo-soluble derivatives of metal-free (H2Pc) molecule and MnPc is investigated. The tuning of optical and magnetic properties in organometallics is driven by their emergence in optoelectronic applications involving flexible electronics. Thin films with metal to metal-free Pc ratios ranging from 1: 1 to 1:10 were fabricated using solution processing that produces macroscopic grains. In the case of Mn-Pc, our previos measurements showed enhanced hybridization of ligand π-electronic states with the Mn d-orbitals as well as indirect exchange interaction similar to that of RKKY type exchange. The evolution of Zeeman splitting of specific MCD-active states resulted in enhanced effective π-electrons g-factors, analogous to diluted magnetic semiconductors (DMS) systems. Recent Variable temperature Magnetic Circular Dichroism (VTVH-MCD) measurements has now revealed that the exchange interaction is Antiferromagnetic. Recent MCD data for mixed derivatives will be presented along with their temperature dependance that further probes this exchange interaction. NSF award 1056589

  10. EPR and Ferromagnetism in Diluted Magnetic Semiconductor Quantum Wells

    NASA Astrophysics Data System (ADS)

    König, Jürgen; MacDonald, Allan H.

    2003-08-01

    Motivated by recent measurements of electron paramagnetic resonance spectra in modulation-doped CdMnTe quantum wells [

    F. J. Teran et al., Phys. Rev. Lett.PRLTAO0031-9007 91, 077201 (2003)
    ], we develop a theory of collective spin excitations in quasi-two-dimensional diluted magnetic semiconductors. Our theory explains the anomalously large Knight shift found in these experiments as a consequence of collective coupling between Mn-ion local moments and itinerant-electron spins. We use this theory to discuss the physics of ferromagnetism in (II,Mn)VI quantum wells and to speculate on the temperature at which it is likely to be observed in n-type modulation-doped systems.

  11. Realizing ferromagnetic coupling in diluted magnetic semiconductor quantum dots.

    PubMed

    Yan, Wensheng; Liu, Qinghua; Wang, Chao; Yang, Xiaoyu; Yao, Tao; He, Jingfu; Sun, Zhihu; Pan, Zhiyun; Hu, Fengchun; Wu, Ziyu; Xie, Zhi; Wei, Shiqiang

    2014-01-22

    Manipulating the ferromagnetic interactions in diluted magnetic semiconductor quantum dots (DMSQDs) is a central theme to the development of next-generation spin-based information technologies, but this remains a great challenge because of the intrinsic antiferromagnetic coupling between impurity ions therein. Here, we propose an effective approach capable of activating ferromagnetic exchange in ZnO-based DMSQDs, by virtue of a core/shell structure that engineers the energy level of the magnetic impurity 3d levels relative to the band edge. This idea has been successfully applied to Zn(0.96)Co(0.04)O DMSQDs covered by a shell of ZnS or Ag2S. First-principles calculations further indicate that covering a ZnS shell around the Co-doped ZnO core drives a transition of antiferromagnetic-to-ferromagnetic interaction, which occurs within an effective depth of 1.2 nm underneath the surface in the core. This design opens up new possibility for effective manipulation of exchange interactions in doped oxide nanostructures for future spintronics applications.

  12. Charge and Spin Transport in Dilute Magnetic Semiconductors

    SciTech Connect

    Ullrich, Carsten A.

    2009-07-23

    This proposal to the DOE outlines a three-year plan of research in theoretical and computational condensed-matter physics, with the aim of developing a microscopic theory for charge and spin dynamics in disordered materials with magnetic impurities. Important representatives of this class of materials are the dilute magnetic semiconductors (DMS), which have attracted great attention as a promising basis for spintronics devices. There is an intense experimental effort underway to study the transport properties of ferromagnetic DMS such as (Ga,Mn)As, and a number of interesting features have emerged: negative magnetoresistance, anomalous Hall effect, non-Drude dynamical conductivity, and resistivity maxima at the Curie temperature. Available theories have been able to account for some of these features, but at present we are still far away from a systematic microscopic understanding of transport in DMS. We propose to address this challenge by developing a theory of charge and spin dynamics based on a combination of the memory-function formalism and time-dependent density functional theory. This approach will be capable of dealing with two important issues: (a) the strong degree of correlated disorder in DMS, close to the localization transition (which invalidates the usual relaxation-time approximation to the Boltzmann equation), (b) the essentially unknown role of dynamical many-body effects such as spin Coulomb drag. We will calculate static and dynamical conductivities in DMS as functions of magnetic order and carrier density, which will advance our understanding of recent transport and infrared absorption measurements. Furthermore, we will study collective plasmon excitations in DMS (3D, 2D and quantum wells), whose linewidths could constitute a new experimental probe of the correlation of disorder, many-body effects and charge and spin dynamics in these materials.

  13. Magnetic Field Modulated Photoreflectance Study of the Electron Effective Mass in Dilute Nitride Semiconductors

    SciTech Connect

    Mori, N.; Hiejima, K.; Kubo, H.; Patane, A.; Eaves, L.

    2011-12-23

    Magnetic field modulated photoreflectance measurements are performed on the dilute nitride semiconductor Ga(AsN) in quantizing magnetic fields. From the measured cyclotron energies, the conduction band effective mass and its dependence on the nitrogen content are determined. The effective mass is found to become significantly heavier in samples with high nitrogen composition (>0.1%).

  14. Spin selector based on periodic diluted-magnetic-semiconductor/nonmagnetic-barrier superlattices

    SciTech Connect

    Yang, Ping-Fan; Guo, Yong; Zhu, Rui

    2015-07-15

    We propose a spin selector based on periodic diluted-magnetic-semiconductor/nonmagnetic-barrier (DMS/NB) superlattices subjected to an external magnetic field. We find that the periodic DMS/NB superlattices can achieve 100% spin filtering over a dramatically broader range of incident energies than the diluted-magnetic-semiconductor/semiconductor (DMS/S) case studied previously. And the positions and widths of spin-filtering bands can be manipulated effectively by adjusting the geometric parameters of the system or the strength of external magnetic field. Such a compelling filtering feature stems from the introduction of nonmagnetic barrier and the spin-dependent giant Zeeman effect induced by the external magnetic field. We also find that the external electric field can exert a significant influence on the spin-polarized transport through the DMS/NB superlattices.

  15. Electronic structure theory of wide gap dilute magnetic semiconductors

    NASA Astrophysics Data System (ADS)

    Ye, Linhui; Freeman, A. J.

    2007-03-01

    The recent exciting reports that wide gap semiconductors, most notably ZnO, TiO2 and GaN, when doped with transition metal elements, may have Tc's that are higher than room temperature have attracted great interest. When interpreted with care, highly precise first principles FLAPW calculations such as used here, are now providing insights into the nature of their strong ferromagnetism (FM). Here, we present an analysis to the electronic structures of several typical wide gap DMS's and illustrate how first principles calculations can lead to correct predictions of their magnetic properties for both Cr:TiO2 and Mn:GaN. The results demonstrate the importance of defect compensation in the determination of the magnetism. A comparison between Mn:ZnO and Co:ZnO highlights the fundamental difference in their electronic structures which explains why their FM is dependent on carriers of different polarity. Correct predictions of their magnetism are found to be due to the correct treatment of the LDA band gap problem. Finally, we provide semi-quantitative discussions of Co doped TiO2, and illustrate why it is highly non- trivial to fully explain its FM based on first principles calculations. E.Wimmer,H.Krakauer,M.Weinert,A.J.Freeman, PRB 24, 864(1981)

  16. Spin-dependent tunneling time in periodic diluted-magnetic-semiconductor/nonmagnetic-barrier superlattices

    SciTech Connect

    Yang, Ping-Fan; Guo, Yong

    2016-02-01

    We investigate the tunneling time (dwell time) in periodic diluted-magnetic-semiconductor/nonmagnetic-barrier (DMS/NB) superlattices subjected to an external magnetic field. It is found that spin-dependent resonant bands form in the spectra of dwell time, which can be effectively manipulated by not only the external magnetic field but also the geometric parameters of the system. Moreover, an intuitive semiclassical delay is defined to illustrate the behavior of the dwell time, and the former one is shown to be the result of “smoothing out” the latter one. We also find that the dwell time in diluted-magnetic-semiconductor/semiconductor superlattices behaves surprisingly different from the DMS/NB case, especially for spin-down electrons.

  17. Hall effect in gallium manganese arsenide-diluted magnetic semiconductors

    NASA Astrophysics Data System (ADS)

    Ruzmetov, Dmitry A.

    A series of GaMnAs samples with various Mn concentrations and thicknesses is extensively studied in this thesis. The influence of annealing on the magnetic, lattice, and electron transport properties of GaMnAs is investigated. X-ray analysis allowed the lattice constants and the strains due to the lattice mismatch between the GaMnAs film and a GaAs substrate for each sample to be determined. Magnetometric measurements confirm the expected anisotropic ferromagnetic characteristics of these semiconductors, and the measured magnetization in hard and easy axis directions indicates that only around 40% of Mn ions contribute to the ferromagnetism. As a result of the study of the electron transport in GaMnAs at high temperatures, we found that the anomalous contribution to the Hall resistivity dominates over the ordinary contribution up to 380 K in our samples. The measured Hall coefficient of metallic samples with low Mn content above the Curie temperature (TC) can be fit with a model that takes into account the ordinary and anomalous contributions to the Hall resistivity. According to our model, the spontaneous Hall coefficient (RS) in our samples is proportional to the square of the longitudinal resistivity above TC, which corresponds to a temperature-independent Hall conductivity, and we checked for one sample that this form of RS holds also at the liquid He temperature. This indicates that the physical mechanism responsible for the anomalous Hall effect (AHE) remains unchanged in the transition from ferromagnetic to paramagnetic phases of the semiconductor. It is found that the temperature dependence of the AHE above TC can be described except for RS(T) with the Curie-Weiss law for the paramagnetic susceptibility with the inclusion of a small, negative, temperature and Mn content independent correction to the susceptibility, which may originate from the diamagnetism of the GaAs matrix. The good agreement between the measured and fitting Hall data suggests that the

  18. Study of magnetism in dilute magnetic semiconductors based on III-V nitrides

    NASA Astrophysics Data System (ADS)

    Rajaram, Rekha

    Spin based electronics, commonly referred to as "spintronics", seeks to expand the functionalities of microelectronic devices by introducing the ability to manipulate the carrier's spin, in addition to or instead of its charge. Key steps in spintronic devices include the injection, manipulation and detection of the carrier's spin. Metal-based spintronic devices such as spin valves have already found applications in high capacity hard disk drive read heads and have potential in non-volatile solid state memories. However, in order to realize the full potential of spintronics, spin manipulation must be introduced into semiconductor devices. This in turn, requires the development of magnetic semiconductors. Dilute magnetic semiconductors (DMS) are a class of magnetic semiconductors in which a fraction of the cations are substitutionally replaced by magnetic ions. The exchange interaction between the spin of the dopant atoms and the carriers in the semiconductor host is expected to bring about global ferromagnetic order in the entire lattice in these materials. The search for novel DMS candidates has been driven by two cardinal requirements - a material system with well-developed growth technology, and a high Curie temperature. In this work, we have investigated the growth and characteristics of one such promising candidate, transition-metal doped InN. InN films were deposited on c-sapphire substrates by molecular beam epitaxy, employing GaN underlayers to reduce the lattice mismatch between the film and substrate. The films were doped from 0.1-6% Cr with no noticeable trace of crystalline secondary phases detected by X-ray diffraction. However, Mn-doping led to segregation of manganese nitride. Hall effect measurements revealed n-type behavior in both undoped as well as Cr-doped films. A magnetic hysteresis, with a small remanence and coercivity was observed in Cr:InN up to room temperature, confirming long-range magnetic order in this material. X-ray magnetic circular

  19. Tuning magnetic disorder in diluted magnetic semiconductors using high fields to 89 Tesla

    SciTech Connect

    Crooker, Scott A; Samarth, Nitin

    2008-01-01

    We describe recent and ongoing studies at the National High Magnetic Field Laboratory at Los Alamos using the new '100 Tesla Multi-Shot Magnet', which is presently delivering fields up to {approx}89 T during its commissioning. We discuss the first experiments performed in this magnet system, wherein the linewidth of low-temperature photoluminescence spectra was used to directly reveal the degree of magnetic alloy disorder 'seen' by excitons in single Zn{sub 0.80}Cd{sub 0.22}Mn{sub 0.08}Se quantum wells. The magnetic potential landscape in II-VI diluted magnetic semiconductors (DMS) is typically smoothed when the embedded Mn{sup 2+} spins align in an applied field. However, an important (but heretofore untested) prediction of current models of compositional disorder is that magnetic alloy fluctuations in many DMS compounds should increase again in very large magnetic fields approaching 100 T. We observed precisely this increase above {approx}70 T, in agreement with a simple model of magnetic alloy disorder.

  20. Exploration of oxide-based diluted magnetic semiconductors toward transparent spintronics

    NASA Astrophysics Data System (ADS)

    Fukumura, T.; Yamada, Y.; Toyosaki, H.; Hasegawa, T.; Koinuma, H.; Kawasaki, M.

    2004-02-01

    A review is given for the recent progress of research in the field of oxide-based diluted magnetic semiconductor (DMS), which was triggered by combinatorial discovery of transparent ferromagnet. The possible advantages of oxide semiconductor as a host of DMS are described in comparison with conventional compound semiconductors. Limits and problems for identifying novel ferromagnetic DMS are described in view of recent reports in this field. Several characterization techniques are proposed in order to eliminate unidentified ferromagnetism of oxide-based DMS unidentified ferromagnetic oxide (UFO). Perspectives and possible devices are also given.

  1. Low temperature nano-spin filtering using a diluted magnetic semiconductor core-shell quantum dot

    NASA Astrophysics Data System (ADS)

    Chattopadhyay, Saikat; Sen, Pratima; Andrews, Joshep Thomas; Sen, Pranay Kumar

    2014-07-01

    The spin polarized electron transport properties and spin polarized tunneling current have been investigated analytically in a diluted magnetic semiconductor core-shell quantum dot in the presence of applied electric and magnetic fields. Assuming the electron wave function to satisfy WKB approximation, the electron energy eigenvalues have been calculated. The spin polarized tunneling current and the spin dependent tunneling coefficient are obtained by taking into account the exchange interaction and Zeeman splitting. Numerical estimates made for a specific diluted magnetic semiconductor, viz., Zn1-xMnxSe/ZnS core-shell quantum dot establishes the possibility of a nano-spin filter for a particular biasing voltage and applied magnetic field. Influence of applied voltage on spin polarized electron transport has been investigated in a CSQD.

  2. Spin-Induced Optical Phenomena in Diluted Magnetic Semiconductors

    NASA Astrophysics Data System (ADS)

    Takeyama, Shojiro

    The following sections are included: * INTRODUCTION * GENERAL FEATURES * Materials * Crystal Structures * Band Structure at ěc{k}≃ 0 * sp-d Exchange Interaction * Magnetic Properties and Parameters * Magnetization Steps due to Nearest-Neighbor Spin Pairs * The Physical Origin of the sp-d Exchange Constants * OPTICAL RESPONSE OF THE LOW-DIMENSIONAL DMSs * Anisotropy of the Zeeman Effect in Two-Dimensional DMSs * Magneto-Optical Method of Interface Characterization * MAGNETIC POLARONS * Bound Magnetic Polarons * Free Magnetic Polarons * OPTICAL OBSERVATION OF MAGNETIC POLARONS * A Selective Excitation Photoluminescence Study * Optical Survey of Free Magnetic Polarons * Two-Dimensional Exciton Free Magnetic Polarons * SUMMARY * REFERENCES

  3. Magnetic properties of layered III-VI Diluted Magnetic Semiconductors (DMS)

    NASA Astrophysics Data System (ADS)

    Pekarek, Thomas; Miotkowski, I.; Ramdas, A. K.

    2015-03-01

    The new class of quasi-two-dimensional III-VI Diluted Magnetic Semiconductors (DMS) exhibits a rich collection of magnetic behavior. The Ga1-xMnxS system exhibits a 3-D spin-glass transition, which was unexpected given its four atom thick two dimensional structure. The best scaling fit was found for critical exponents (γ = 4.0, β = 0.8, and δ = 5.5) similar to the three dimensional Zn1-xMnxTe system. Ga1-xFexSe exhibits a prominent magnetic anisotropy over the temperature range from 10 to 400 K. Theoretical models for In1-xMnxSe, In1-xMnxS, and Ga1-xMnxS provide good agreement with experimental results over a wide range of temperatures and fields. The mechanism behind an unusually large thermal hysteresis (ΔT ~ 200 K) in In1-xMnxSe, which extends up to room temperature, is not completely understood at this time. Typically, thermal hysteresis in most materials has a ΔT ~ 20 K occurring well below room temperature. The host III-VI semiconductors themselves are among the best non-linear optical materials. This research was supported by the UNF Terry Presidential Professorship, the Florida Space Grant Consortium, A Purdue U. Academic Reinvestment Program, and by NSF Grant Nos. DMR-07-06593 and DMR-14-29428.

  4. Structural, morphological and magnetic analysis of Cd-Co-S dilute magnetic semiconductor nanofilms

    NASA Astrophysics Data System (ADS)

    Kumar, Suresh; Negi, N. S.; Katyal, S. C.; Sharma, Pankaj; Sharma, Vineet

    2014-10-01

    Cd1-xCoxS dilute magnetic semiconductor nanofilms (0≤x≤0.08 at%) deposited by chemical bath deposition have been investigated using grazing angle x-ray diffraction, atomic force microscopy and vibrating sample magnetometer. The introduction of Co2+ ions in CdS structure induces structural disorders and hence, results in degradation of crystallinity. The crystallite size, interplanar spacing and lattice parameter ratio decrease with increasing Co2+ concentration in CdS. The diamagnetic state of CdS disappears with increase in Co concentration and films with x>0.02 exhibit ferromagnetism. This may be explained in terms of the spin-orbit interactions and Co2+ ion induced the lattice defects and phase separation.

  5. Alloyed Mn-Cu-In-S nanocrystals: a new type of diluted magnetic semiconductor quantum dots

    NASA Astrophysics Data System (ADS)

    Liu, Qinghui; Deng, Ruiping; Ji, Xiangling; Pan, Daocheng

    2012-06-01

    A new type of Mn-Cu-In-S diluted magnetic semiconductor quantum dots was synthesized and reported for the first time. The quantum dots, with no highly toxic elements, not only show the same classic diluted magnetic behavior as Mn-doped CdSe, but also exhibit tunable luminescent properties in a relatively large window from 542 to 648 nm. An absolute photoluminescence quantum yield up to 20% was obtained after the shell growth of ZnS. This kind of magnetic/luminescent bi-functional Mn-Cu-In-S/ZnS core/shell quantum dot might serve as promising nanoprobes for use in dual-mode optical and magnetic resonance imaging techniques.

  6. Preparation, Characterization, Electrical and Magnetic Properties of Mn-Doped Dilute Magnetic Semiconductors

    NASA Astrophysics Data System (ADS)

    Malik, Samiksha; Mohite, Komal; Naik, Pranav; Tangsali, R. B.

    2016-10-01

    Nanoparticle dilute magnetic semiconductors (DMS) are becoming increasingly important due to their possible applications in spintronics, an emerging field where the conduction process in the materials is a spin-based process. Nanoparticles of Mn-doped ZnO (DMS) material with general formula Zn1-xMnxO (x=0.05,0.15,0.2) were prepared by opting single stage combustion synthesis process. The samples characterized, exhibited formation of monophasic nanoparticles of the sample with average particle size ranging between 17 nm to 23 nm. The calculations of energy bandgap made from UV absorption spectra showed variation of the bandgap from 2.18 eV to 2.32 eV. The magnetic measurements (VSM) made on the samples confirmed formation of a single diamagnetic (Zn0.95Mn0.05O) and two namely (Zn0.85Mn0.15O) (Zn0.8Mn0.2O) paramagnetic samples. It is interesting to see that all the three magnetic profiles exhibit hysteresis type behavior both in diamagnetic form and paramagnetic form. The resistivity of the samples was of the order of 1010 Ohm-cm (Ω-cm) at lower temperatures. Temperature-dependent resistivity curves exhibited peaking behavior for all the three samples which is very interesting. Temperature-dependent thermo-power profiles give an indication of n-type semiconductor behavior with significantly deep and broad minima around 100∘C which becomes sharper for sample with higher Mn concentration.

  7. Monte Carlo simulations of diluted magnetic semiconductors using ab initio exchange parameters.

    PubMed

    Nayak, S K; Ogura, M; Hucht, A; Akai, H; Entel, P

    2009-02-11

    Co doped ZnO (Zn(1-x)Co(x)O) is studied as a prototype material for transition metal doped II-VI diluted magnetic semiconductors (DMSs) from first-principles and Monte Carlo simulations. The exchange interactions are calculated using the Korringa-Kohn-Rostoker (KKR) Green's function method. The exchange coupling constants thus obtained are treated in the classical Heisenberg model and the magnetic phase transitions are studied by the Monte Carlo technique. Our results show that the defect free substitutional DMSs of Zn(1-x)Co(x)O do not sustain magnetization at low concentration. At high concentration, we find layered magnetic structures. Ferromagnetism, with Curie temperature below room temperature, is stable at intermediate Co concentrations. First-principles studies with the generalized gradient approximation (GGA) and the GGA together with the Hubbard U are discussed with respect to structural and electronic properties of ZnO.

  8. Domain walls in the (Ga,Mn)as diluted magnetic semiconductor.

    PubMed

    Sugawara, Akira; Kasai, H; Tonomura, A; Brown, P D; Campion, R P; Edmonds, K W; Gallagher, B L; Zemen, J; Jungwirth, T

    2008-02-01

    We report experimental and theoretical studies of magnetic domain walls in an in-plane magnetized (Ga,Mn)As dilute moment ferromagnetic semiconductor. Our high-resolution electron holography technique provides direct images of domain wall magnetization profiles. The experiments are interpreted based on microscopic calculations of the micromagnetic parameters and Landau-Lifshitz-Gilbert simulations. We find that the competition of uniaxial and biaxial magnetocrystalline anisotropies in the film is directly reflected in orientation dependent wall widths, ranging from approximately 40 to 120 nm. The domain walls are of the Néel type and evolve from near-90 degrees walls at low temperatures to large angle [11[over ]0]-oriented walls and small angle [110]-oriented walls at higher temperatures.

  9. Spin-polarization effects in homogeneous and non-homogeneous diluted magnetic semiconductor heterostructures.

    PubMed

    Rodrigues, Sara C P; Sipahi, Guilherme M; Scolfaro, Luísa M R; da Silva, Eronides F

    2010-09-17

    Spin polarization is a key characteristic in developing spintronic devices. Diluted magnetic heterostructures (DMH), where subsequent layers of conventional and diluted magnetic semiconductors (DMS) are alternate, are one of the possible ways to obtain it. Si being the basis of modern electronics, Si or other group-IV DMH can be used to build spintronic devices directly integrated with conventional ones. In this work we study the physical properties and the spin-polarization effects of p-type DMH based in group-IV semiconductors (Si, Ge, SiGe, and SiC), by performing self-consistent [Formula: see text] calculations in the local spin density approximation. We show that high spin polarization can be maintained in these structures below certain values of the carrier concentrations. Full spin polarization is attained in the low carrier concentration regime for carrier concentrations in the DMS layer up to approximately 2.0 x 10(19) cm(-3) for Si and up to approximately 6.0 x 10(19) cm(-3) for SiC. Partial, but still important spin polarization can be achieved for all studied group-IV DMH, with the exception of Ge for carrier concentrations up to 6.0 x 10(19) cm(-3). The role played by the effective masses and the energy splitting of the spin-orbit split-off hole bands is also discussed throughout the paper.

  10. Preparation of dilute magnetic semiconductor films by metalorganic chemical vapor deposition

    NASA Technical Reports Server (NTRS)

    Nouhi, Akbar (Inventor); Stirn, Richard J. (Inventor)

    1990-01-01

    A method for preparation of a dilute magnetic semiconductor (DMS) film is provided, wherein a Group II metal source, a Group VI metal source and a transition metal magnetic ion source are pyrolyzed in the reactor of a metalorganic chemical vapor deposition (MOCVD) system by contact with a heated substrate. As an example, the preparation of films of Cd.sub.1-x Mn.sub.x Te, wherein 0.ltoreq..times..ltoreq.0.7, on suitable substrates (e.g., GaAs) is described. As a source of manganese, tricarbonyl (methylcyclopentadienyl) maganese (TCPMn) is employed. To prevent TCPMn condensation during the introduction thereof int the reactor, the gas lines, valves and reactor tubes are heated. A thin-film solar cell of n-i-p structure, wherein the i-type layer comprises a DMS, is also described; the i-type layer is suitably prepared by MOCVD.

  11. Cd0.9375Mn0.0625S diluted magnetic semiconductor: A DFT study

    NASA Astrophysics Data System (ADS)

    Rani, Anita; Kaur, Kulwinder; Kumar, Ranjan

    2015-08-01

    We studied the spin polarized electronic band structures and magnetic properties of the diluted magnetic semiconductor Cd1-xMnxS in Zinc Blende phase (B3) with 0.0625 Mn by using ab initio method. The calculations were performed by using Density Functional Theory as implemented in the Spanish Initiative for Electronic Simulations with Thousands of Atoms code using local density approximation (LDA). Calculated electronic band structures and magnetic properties of Cd1-xMnxS are discussed in terms of contribution of Mn 3d5 4s2, Cd 4d10 5s2, S 3s2 3p4 orbitals. The total magnetic moment is found to be 5.00 µb for Cd1-xMnxS at x=0.0625. This value indicate that Mn atom adds no hole carrier to the perfect CdS crystal. We found that Mn doped systems are ferromagnetic. Calculated results are in good agreement with previous studies.

  12. Exploration of the new class of layered III-VI Diluted Magnetic Semiconductors (DMS)

    NASA Astrophysics Data System (ADS)

    Pekarek, Thomas; Miotkowski, I.; Ramdas, A. K.

    2014-03-01

    We have explored a new class of quasi-two-dimensional III-VI Diluted Magnetic Semiconductors (DMS) exhibiting a wide range of magnetic behavior. Several are good candidates for potential device applications. In In1-xMnxSe, we found a remarkably large thermal hysteresis (Delta T is approximately 200 K) extending up to room temperature. This is an important material because a typical thermal hysteresis in most materials has a Delta T approximately 20 K occurring well below room temperature. The thermal hysteresis is also seen in transport measurements for In1-xMnxSe. To date, we have found good agreement between experiment and theory for the 1st three III-VI DMS systems (In1-xMnxSe, In1-xMnxS, and Ga1-xMnxS). Ga1-xFexSe is unique amount the III-VI DMS exhibiting substantial magnetic anisotropy. In Ga1-xMnxS, we have found a spin glass transition and critical exponents (γ = 4.0, β = 0.8, and δ = 5.5) that are in agreement with the theory. We surprisingly found that the spin glass transition in the 2-D IIIVI DMS similar to spin glass in 3-D II-VI DMS. [This research was supported by the UNF Terry Presidential Professorship, a Purdue University Academic Reinvestment Program and by the National Science Foundation (NSF) Grant Nos. DMR-07-06593 and DMR-04-05082.

  13. X-ray magnetic dichroism in (Zn,Mn)O diluted magnetic semiconductors: First-principles calculations

    NASA Astrophysics Data System (ADS)

    Antonov, V. N.; Bekenov, L. V.; Mazur, D. V.; Germash, L. P.

    2012-06-01

    The electronic structure of (Zn,Mn)O diluted magnetic semiconductors was investigated theoretically from first principles by using the fully-relativistic Dirac linear muffin-tin orbital band structure method with the local spin-density approximation (LSDA) and the LSDA+ U approach. The X-ray magnetic circular dichroism (XMCD) spectra at the Mn, Zn, and O K and Mn L 2,3 edges were investigated theoretically from first principles. The origin of the XMCD spectra in these compounds was examined. The effect of oxygen vacancy atoms was found to be crucial for the X-ray magnetic dichroism at the Mn L 2,3 edges. The calculated results are compared with available experimental data.

  14. Local atomic and magnetic structure of dilute magnetic semiconductor (Ba,K)(Zn,Mn)2As2

    DOE PAGES

    Frandsen, Benjamin A.; Gong, Zizhou; Terban, Maxwell W.; ...

    2016-09-06

    We studied the atomic and magnetic structure of the dilute ferromagnetic semiconductor system (Ba,K)(Zn,Mn)2As2 through atomic and magnetic pair distribution function analysis of temperature-dependent x-ray and neutron total scattering data. Furthermore, we detected a change in curvature of the temperature-dependent unit cell volume of the average tetragonal crystallographic structure at a temperature coinciding with the onset of ferromagnetic order. We also observed the existence of a well-defined local orthorhombic structure on a short length scale of ≲5Å, resulting in a rather asymmetrical local environment of the Mn and As ions. Finally, the magnetic PDF revealed ferromagnetic alignment of Mn spinsmore » along the crystallographic c axis, with robust nearest-neighbor ferromagnetic correlations that exist even above the ferromagnetic ordering temperature. Finally, we discuss these results in the context of other experiments and theoretical studies on this system.« less

  15. Unraveling the nature of carrier-mediated ferromagnetism in diluted magnetic semiconductors

    NASA Astrophysics Data System (ADS)

    Bouzerar, Georges; Bouzerar, Richard

    2015-10-01

    After more than a decade of intensive research in the field of diluted magnetic semiconductors (DMS), the nature and origin of ferromagnetism, especially in III-V compounds, is still controversial. Many questions and open issues are under intensive debates. Why after so many years of investigations, Mn-doped GaAs remains the candidate with the highest Curie temperature among the broad family of III-V materials doped with transition metal (TM) impurities? How can one understand that these temperatures are almost two orders of magnitude larger than that of hole-doped (Zn,Mn)Te or (Cd,Mn)Se? Is there any intrinsic limitation or is there any hope to reach room-temperature ferromagnetism in the dilute regime? How can one explain the proximity of (Ga,Mn)As to the metal-insulator transition and the change from Ruderman-Kittel-Kasuya-Yosida (RKKY) couplings in II-VI compounds to double-exchange type in (Ga,Mn)N? In spite of the great success of density functional theory-based studies to provide accurately the critical temperatures in various compounds, till very lately a theory that provides a coherent picture and understanding of the underlying physics was still missing. Recently, within a minimal model, it has been possible to show that among the physical parameters, the key one is the position of the TM acceptor level. By tuning the value of that parameter, one is able to explain quantitatively both magnetic and transport properties in a broad family of DMS. We will see that this minimal model explains in particular the RKKY nature of the exchange in (Zn,Mn)Te/(Cd,Mn)Te and the double exchange type in (Ga,Mn)N and simultaneously the reason why (Ga,Mn)As exhibits the highest critical temperature among both II-VI and III-V DMS's.

  16. Generation of diluted magnetic semiconductor nanostructures by pulsed laser ablation in liquid

    NASA Astrophysics Data System (ADS)

    Savchuk, Ol. A.; Savchuk, A. I.; Stolyarchuk, I. D.; Tkachuk, P. M.; Garasym, V. I.

    2015-11-01

    Results of study of two members of diluted magnetic semiconductor (DMS) family, namely Cd1-xMnxTe and Zn1-xMnxO, which are in form of micro- and nanoparticles generated by pulsed laser ablation in liquid medium (PLAL), have been presented. The structural analysis using X-ray diffraction (XRD) of nanocrystals indicated that Mn has entered the AIIBVI lattice without changing the crystal structure and systematically substituted the A2+ ions in the lattice. Atomic force microscopy (AFM) gives information about surface morphology of the formed nanostructures. The scanning electron microscopy (SEM) clearly illustrates flower-like particles of Zn1-xMnxO, which consist of nanosheets and nanoleaves with average thickness about (5-8) nm. Obviously, these nanoobjects are responsible for the observed blue shift of the absorption edge in DMS nanostructures. In magneto-optical Faraday rotation spectra of both Cd1-xMnxTe and Zn1-xMnxO nanostructures there were exhibited peculiarities associated with s,p-d spin exchange interactions and confinement effect. It was observed almost linear dependence of the Faraday rotation as function of magnetic field strength for nanoparticles in contrast to the dependence with saturation in bulk case.

  17. Preparation of dilute magnetic semiconductor films by metalorganic chemical vapor deposition

    NASA Technical Reports Server (NTRS)

    Nouhi, Akbar (Inventor); Stirn, Richard J. (Inventor)

    1988-01-01

    A method for preparation of a dilute magnetic semiconductor (DMS) film is provided, in which a Group II metal source, a Group VI metal source and a transition metal magnetic ion source are pyrolyzed in the reactor of a metalorganic chemical vapor deposition (MOCVD) system by contact with a heated substrate. As an example, the preparation of films of Cd(sub 1-x)Mn(sub x)Te, in which 0 is less than or equal to x less than or equal to 0.7, on suitable substrates (e.g., GaAs) is described. As a source of manganese, tricarbonyl (methylcyclopentadienyl) manganese (TCPMn) is employed. To prevent TCPMn condensation during its introduction into the reactor, the gas lines, valves and reactor tubes are heated. A thin-film solar cell of n-i-p structure, in which the i-type layer comprises a DMS, is also described; the i-type layer is suitably prepared by MOCVD.

  18. Synthesis and characterization of Mn-doped ZnO diluted magnetic semiconductors

    NASA Astrophysics Data System (ADS)

    Abdel-Galil, A.; Balboul, M. R.; Sharaf, A.

    2015-11-01

    In the present work undoped and Mn doped ZnO nanoparticles (ZnO:Mn), diluted magnetic semiconductors, were successfully synthesized by the sol-gel method at room temperature. The morphology of ZnO nanoparticles constituted by flower-like structures with hexagonal morphologies that changed significantly after the incorporation of Mn. Rietveld refinements results showed that Mn ions are successfully doped into ZnO matrix without altering its wurtzite phase. Meanwhile, Raman spectroscopy analyses confirm the wurtzite structure of undoped ZnO and ZnO:Mn nanoparticles. The lattice parameters increase with increasing Mn content due to the large ionic radius of Mn2+ compared to that of Zn2+. Electron spin resonance measurements were performed to gain information about oxidation state and site occupancy of the magnetic Mn ions in the ZnO lattice. Moreover, UV-vis absorption spectra have been utilized to calculate the optical band gap of the undoped ZnO and ZnO:Mn nanoparticles before and after different γ-irradiation doses. The band gap of ZnO:Mn (2%) is 2.62 eV which is noticeably smaller than the 3.26 eV of undoped ZnO. The thermal decomposition properties of the prepared nanoparticle samples were also studied using simultaneous Thermogravimetric analysis in temperature range from 30 to 500 °C.

  19. Ab initio description of the diluted magnetic semiconductor Ga1-xMnxAs: Ferromagnetism, electronic structure, and optical response

    NASA Astrophysics Data System (ADS)

    Craco, L.; Laad, M. S.; Müller-Hartmann, E.

    2003-12-01

    Motivated by a study of various experiments describing the electronic and magnetic properties of the diluted magnetic semiconductor Ga1-xMnxAs, we investigate its physical response in detail using a combination of first-principles band structure with methods based on dynamical mean field theory to incorporate strong, dynamical correlations, and intrinsic as well as extrinsic disorder in one single theoretical picture. We show how ferromagnetism is driven by double exchange (DE), in agreement with very recent observations, along with a good quantitative description of the details of the electronic structure, as probed by scanning tunneling microscopy and optical conductivity. Our results show how ferromagnetism can be driven by DE even in diluted magnetic semiconductors with small carrier concentration.

  20. Extended coherence length of spatially oscillating electron-spin polarization in dilute-magnetic-semiconductor quantum wells

    SciTech Connect

    Tsuchiya, Takuma

    2013-12-04

    We have investigated the possibility that the coherence length of spatially oscillating electron-spin polarization is improved in dilute magnetic semiconductors. In usual nonmagnetic quantum wells, the spin polarization of the electrons injected from a ferromagnetic source electrode oscillates spatially because of the spin precession due to spin-orbit effective magnetic fields, i.e., the Rashba and Dresselhaus fields. However, the polarization is damped within an oscillation period by the D’yakonov-Perel’ spin relaxation. In paramagnetic dilute magnetic semiconductors, impurity spin polarization is induced under the electron-spin polarization, and this impurity polarization influences the electron-spin precession and possibly improves the spatial electron-spin coherence. The validity of this effect is demonstrated by a numerical simulation for a CdMnTe quantum well.

  1. Half-metallic diluted antiferromagnetic semiconductors.

    PubMed

    Akai, H; Ogura, M

    2006-07-14

    The possibility of half-metallic antiferromagnetism, a special case of ferrimagnetism with a compensated magnetization, in the diluted magnetic semiconductors is highlighted on the basis of the first-principles electronic structure calculation. As typical examples, the electrical and magnetic properties of II-VI compound semiconductors doped with 3d transition metal ion pairs--(V, Co) and (Fe, Cr)--are discussed.

  2. Crossover from impurity to valence band in diluted magnetic semiconductors: Role of Coulomb attraction by acceptors

    SciTech Connect

    Popescu, Florentin; Sen, Cengiz; Dagotto, Elbio R; Moreo, Adriana

    2007-01-01

    The crossover between an impurity band (IB) and a valence band (VB) regime as a function of the magnetic impurity concentration in a model for diluted magnetic semiconductors (DMSs) is studied systematically by taking into consideration the Coulomb attraction between the carriers and the magnetic impurities. The density of states and the ferromagnetic transition temperature of a spin-fermion model applied to DMSs are evaluated using dynamical mean-field theory and Monte Carlo (MC) calculations. It is shown that the addition of a square-well-like attractive potential can generate an IB at small enough Mn doping x for values of the p-d exchange J that are not strong enough to generate one by themselves. We observe that the IB merges with the VB when x>=xc where xc is a function of J and the Coulomb strength V. Using MC simulations, we demonstrate that the range of the Coulomb attraction plays an important role. While the on-site attraction, which has been used in previous numerical simulations, effectively renormalizes J for all values of x, an unphysical result, a nearest-neighbor range attraction renormalizes J only at very low dopings, i.e., until the bound holes wave functions start to overlap. Thus, our results indicate that the Coulomb attraction can be neglected to study Mn-doped GaSb, GaAs, and GaP in the relevant doping regimes, but it should be included in the case of Mn-doped GaN, which is expected to be in the IB regime.

  3. Intrinsic ferromagnetic properties in Cr-doped ZnO diluted magnetic semiconductors

    SciTech Connect

    Liu Yang; Yang Yanting; Yang Jinghai; Guan Qingfeng; Liu Huilian; Yang Lili; Zhang Yongjun; Wang Yaxin; Wei Maobin; Liu Xiaoyan; Fei Lianhua; Cheng Xin

    2011-05-15

    The Cr-doped zinc oxide (Zn{sub 1-x}Cr{sub x}O, 0{<=}x{<=}0.08) diluted magnetic semiconductors have been synthesized successfully by the sol-gel method. Investigations on magnetic, optical and structural properties of the produced samples have been done. Energy dispersive spectroscopy (EDS) shows the existence of Cr ion in the Cr-doped ZnO. The results of X-ray diffraction (XRD), the transmission electron microscope (TEM), X-ray photoelectron spectroscopy (XPS) and X-ray absorption fine structure (XAFS) indicate that the Cr ions are at least partially substitutionally incorporated into the crystal lattice of ZnO. The produced samples show good high-T{sub c} (Curie temperature) ferromagnetism (FM) in Cr-doped ZnO nanoparticles with Cr concentration of less than 5 at%. The results of photoluminescence (PL) further testify that FM is an intrinsic property of the Cr-doped ZnO nanoparticles. And the occurrence of FM should mainly contribute to the Cr doping. -- Graphical Abstract: As can be seen from the magnetic hysteresis loops of Zn{sub 1-x}Cr{sub x}O (x=0.01, 0.03, 0.05, and 0.08) at room temperature under 10 KOe, the samples show good high-T{sub c} ferromagnetism with Cr concentration of less than 5 at%. Display Omitted Highlights: {yields} Zn{sub 1-x}Cr{sub x}O(0{<=}x{<=}0.08) nanoparticles are successfully synthesized by sol-gel method. {yields} The Cr ions are substitutionally incorporated into the crystal lattice of ZnO. {yields} The Cr-doped ZnO nanoparticles show good high-T{sub c} ferromagnetism. {yields} The ferromagnetism is an intrinsic property of the Cr-doped ZnO nanoparticles.

  4. Hubbard U calculations for gap states in dilute magnetic semiconductors.

    PubMed

    Fukushima, T; Katayama-Yoshida, H; Sato, K; Bihlmayer, G; Mavropoulos, P; Bauer, D S G; Zeller, R; Dederichs, P H

    2014-07-09

    On the basis of constrained density functional theory, we present ab initio calculations for the Hubbard U parameter of transition metal impurities in dilute magnetic semiconductors, choosing Mn in GaN as an example. The calculations are performed by two methods: (i) the Korringa-Kohn-Rostoker (KKR) Green function method for a single Mn impurity in GaN and (ii) the full-potential linearized augmented plane-wave (FLAPW) method for a large supercell of GaN with a single Mn impurity in each cell. By changing the occupancy of the majority t2 gap state of Mn, we determine the U parameter either from the total energy differences E(N + 1) and E(N - 1) of the (N ± 1)-electron excited states with respect to the ground state energy E(N), or by using the single-particle energies for n(0) ± 1/2 occupancies around the charge-neutral occupancy n0 (Janak's transition state model). The two methods give nearly identical results. Moreover the values calculated by the supercell method agree quite well with the Green function values. We point out an important difference between the 'global' U parameter calculated using Janak's theorem and the 'local' U of the Hubbard model.

  5. Optical properties of diluted magnetic semiconductor Cu:ZnS quantum dots

    NASA Astrophysics Data System (ADS)

    Imam, N. G.; Bakr Mohamed, Mohamed

    2014-09-01

    Herein quantum dots (QDs) of diluted magnetic semiconductor Cu:ZnS have been synthesized via a simple chemical synthesis method. A single phase solid solution is formed up to x = 0.1 which confirmed by using X-ray diffraction. Crystal structure and microstructure analyses were performed by Rietveld refinement. Photoluminescence (PL) emission spectra were recorded for pure and Cu doped ZnS QDs excited at 268 and 228 nm respectively. PL emission and excitation spectra were investigated in different wavelength regions within the range of 200-900 nm. PL results in the range of 220-300 nm emission band reveals that the band gap of pure ZnS QDs is about 4.43 eV which greater than that of bulk ZnS (3.7 eV). The band gap of Cu:ZnS QDs is tunable with Cu content (x) as well as the crystalline size, and it is peaked around 4.47 eV. PL emission in the range of 350-650 nm exhibits a green fluorescence band peaking around 552 nm for pure ZnS QDs, which confirms the characteristic feature of Zn2+ as luminescent centers in the lattice, while blue emission bands peaked around 471 nm for Cu:ZnS QDs that is attributed to the transition of electrons from conduction band of ZnS to the Cu impurity level. The blue shift of the absorption peak directly reflects the effect of quantum confinement. The PL results have been supported by X-ray phase analysis, high-resolution electron microscopy (HRTEM and SEM), compositional evaluation (EDX) and magnetic measurements (VSM).

  6. Room-temperature decay and light reactivation of high-Tc ferromagnetism in an oxide-diluted magnetic semiconductor.

    PubMed

    Pan, Dengyu; Wan, Jianguo; Xu, Guoliang; Lv, Liya; Wu, Yujie; Min, Han; Liu, Junming; Wang, Guanghou

    2006-10-04

    We present a novel route for manipulation of the ferromagnetic order in Co-doped TiO2 using UV laser irradiation. The ferromagnetic order of the nanocrystal films decays with aging in air at room temperature, which can be reactivated and enhanced by UV irradiation, whereas the coercive force reduces with irradiation time. Photoinduced trapped electrons were suggested to induce the ferromagnetic order. We believe that light manipulation is a general method for tuning the magnetic properties of oxide-based diluted magnetic semiconductors, which can find practical applications in future integrated magneto-optical nanoelectronics.

  7. CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES: A Green's function model for ferromagnetism and spin excitations of (Ga, Mn)As diluted magnetic semiconductors

    NASA Astrophysics Data System (ADS)

    Liu, Gui-Bin; Liu, Bang-Gui

    2009-11-01

    We study (Ga, Mn)As diluted magnetic semiconductors in terms of the Ruderman-Kittel-Kasuya-Yosida quantum spin model in Green's function approach. Random distributions of the magnetic atoms are treated by using an analytical average of magnetic configurations. Average magnetic moments and spin excitation spectra as functions of temperature can be obtained by solving self-consistent equations, and the Curie temperature TC is given explicitly. TC is proportional to magnetic atomic concentration, and there exists a maximum for TC as a function of carrier concentration. Applied to (Ga, Mn)As, the theoretical results are consistent with experiment and the experimental TC can be obtained with reasonable parameters. This modelling can also be applied to other diluted magnetic semiconductors.

  8. Origin and control of ferromagnetism in dilute magnetic semiconductors and oxides (invited)

    NASA Astrophysics Data System (ADS)

    Dietl, Tomasz

    2008-04-01

    The author reviews the present understanding of the hole-mediated ferromagnetism in magnetically doped semiconductors and oxides as well as the origin of high temperature ferromagnetism in materials containing no valence band holes. It is argued that in these systems spinodal decomposition into regions with a large and a small concentration of magnetic component takes place. This self-organized assembling of magnetic nanocrystals can be controlled by codoping and growth conditions. Functionalities of these multicomponent systems are described together with prospects for their applications in spintronics, nanoelectronics, photonics, plasmonics, and thermoelectrics.

  9. Large positive magnetoresistance effects in the dilute magnetic semiconductor (Zn,Mn)Se in the regime of electron hopping

    SciTech Connect

    Jansson, F. Wiemer, M.; Gebhard, F.; Baranovskii, S. D.; Nenashev, A. V.; Petznick, S.; Klar, P. J.; Hetterich, M.

    2014-08-28

    Magnetoresistance in dilute magnetic semiconductors is studied in the hopping transport regime. Measurements performed on Cl-doped Zn{sub 1–x}Mn{sub x}Se with x < 8% are compared with simulation results obtained by a hopping transport model. The energy levels of the Cl donors are affected by the magnetization of Mn atoms in their vicinity via the s-d exchange interaction. Compositional disorder, in particular, the random distribution of magnetic atoms, leads to a magnetic-field induced broadening of the donor energy distribution. As the energy distribution broadens, the electron transport is hindered and a large positive contribution to the magnetoresistance arises. This broadening of the donor energy distribution is largely sufficient to account for the experimentally observed magnetoresistance effects in n-type (Zn,Mn)Se with donor concentrations below the metal–insulator transition.

  10. A new diluted magnetic semiconductor: The half-metallic ferromagnet CoTi1-xFexSb

    NASA Astrophysics Data System (ADS)

    Balke, Benjamin; Kroth, Kristian; Fecher, Gerhard H.; Felser, Claudia

    2008-04-01

    C1b compounds with 18 valence electrons are semiconducting. It will be shown that doping with electrons results in half-metallic ferromagnets, similar to the case of diluted semiconductors. CoTiSb is known to be a semiconducting C1b compound. Doping by Fe is expected to result in ferromagnetic order. It was found that Ti can be replaced by up to about 10% Fe while its crystal structure still remains C1b, which was proved by x-ray powder diffraction. Superconducting quantum interference device magnetometry revealed a magnetic moment of 0.32μB/unit cell at 5K.

  11. Excitations and magnetization density distribution in the dilute ferromagnetic semiconductor Yb14MnSb11

    NASA Astrophysics Data System (ADS)

    Stone, M. B.; Garlea, V. O.; Gillon, B.; Cousson, A.; Christianson, A. D.; Lumsden, M. D.; Nagler, S. E.; Mandrus, D.; Sales, B. C.

    2017-01-01

    Yb14MnSb11 is a rare example of a Kondo lattice compound with ferromagnetic dominated RKKY interactions. As a ferromagnetic semiconductor with Tc≈53 K, it is also a potential compound for exploration of spintronic devices. Here we describe measurements which answer remaining questions regarding the energy scales of the exchange interactions, the valence, and the magnetization density distribution in this system. We find that the system consists of RKKY exchange coupled Mn2 + sites with nearest and next nearest exchange interactions dominating the magnetic spectrum with no significant magnetization density localized on other atomic sites. The extended spread of a negative magnetization around each of the Mn ions supports a Kondo screening cloud scenario for Yb14MnSb11 .

  12. New Fluoride-arsenide Diluted Magnetic Semiconductor (Ba,K)F(Zn,Mn)As with Independent Spin and Charge Doping

    NASA Astrophysics Data System (ADS)

    Chen, Bijuan; Deng, Zheng; Li, Wenmin; Gao, Moran; Liu, Qingqing; Gu, C. Z.; Hu, F. X.; Shen, B. G.; Frandsen, Benjamin; Cheung, Sky; Lian, Liu; Uemura, Yasutomo J.; Ding, Cui; Guo, Shengli; Ning, Fanlong; Munsie, Timothy J. S.; Wilson, Murray Neff; Cai, Yipeng; Luke, Graeme; Guguchia, Zurab; Yonezawa, Shingo; Li, Zhi; Jin, Changqing

    2016-11-01

    We report the discovery of a new fluoride-arsenide bulk diluted magnetic semiconductor (Ba,K)F(Zn,Mn)As with the tetragonal ZrCuSiAs-type structure which is identical to that of the “1111” iron-based superconductors. The joint hole doping via (Ba,K) substitution & spin doping via (Zn,Mn) substitution results in ferromagnetic order with Curie temperature up to 30 K and demonstrates that the ferromagnetic interactions between the localized spins are mediated by the carriers. Muon spin relaxation measurements confirm the intrinsic nature of the long range magnetic order in the entire volume in the ferromagnetic phase. This is the first time that a diluted magnetic semiconductor with decoupled spin and charge doping is achieved in a fluoride compound. Comparing to the isostructure oxide counterpart of LaOZnSb, the fluoride DMS (Ba,K)F(Zn,Mn)As shows much improved semiconductive behavior that would be benefit for further application developments.

  13. New Fluoride-arsenide Diluted Magnetic Semiconductor (Ba,K)F(Zn,Mn)As with Independent Spin and Charge Doping

    PubMed Central

    Chen, Bijuan; Deng, Zheng; Li, Wenmin; Gao, Moran; Liu, Qingqing; Gu, C. Z.; Hu, F. X.; Shen, B. G.; Frandsen, Benjamin; Cheung, Sky; Lian, Liu; Uemura, Yasutomo J.; Ding, Cui; Guo, Shengli; Ning, Fanlong; Munsie, Timothy J. S.; Wilson, Murray Neff; Cai, Yipeng; Luke, Graeme; Guguchia, Zurab; Yonezawa, Shingo; Li, Zhi; Jin, Changqing

    2016-01-01

    We report the discovery of a new fluoride-arsenide bulk diluted magnetic semiconductor (Ba,K)F(Zn,Mn)As with the tetragonal ZrCuSiAs-type structure which is identical to that of the “1111” iron-based superconductors. The joint hole doping via (Ba,K) substitution & spin doping via (Zn,Mn) substitution results in ferromagnetic order with Curie temperature up to 30 K and demonstrates that the ferromagnetic interactions between the localized spins are mediated by the carriers. Muon spin relaxation measurements confirm the intrinsic nature of the long range magnetic order in the entire volume in the ferromagnetic phase. This is the first time that a diluted magnetic semiconductor with decoupled spin and charge doping is achieved in a fluoride compound. Comparing to the isostructure oxide counterpart of LaOZnSb, the fluoride DMS (Ba,K)F(Zn,Mn)As shows much improved semiconductive behavior that would be benefit for further application developments. PMID:27874044

  14. New Fluoride-arsenide Diluted Magnetic Semiconductor (Ba,K)F(Zn,Mn)As with Independent Spin and Charge Doping.

    PubMed

    Chen, Bijuan; Deng, Zheng; Li, Wenmin; Gao, Moran; Liu, Qingqing; Gu, C Z; Hu, F X; Shen, B G; Frandsen, Benjamin; Cheung, Sky; Lian, Liu; Uemura, Yasutomo J; Ding, Cui; Guo, Shengli; Ning, Fanlong; Munsie, Timothy J S; Wilson, Murray Neff; Cai, Yipeng; Luke, Graeme; Guguchia, Zurab; Yonezawa, Shingo; Li, Zhi; Jin, Changqing

    2016-11-22

    We report the discovery of a new fluoride-arsenide bulk diluted magnetic semiconductor (Ba,K)F(Zn,Mn)As with the tetragonal ZrCuSiAs-type structure which is identical to that of the "1111" iron-based superconductors. The joint hole doping via (Ba,K) substitution &spin doping via (Zn,Mn) substitution results in ferromagnetic order with Curie temperature up to 30 K and demonstrates that the ferromagnetic interactions between the localized spins are mediated by the carriers. Muon spin relaxation measurements confirm the intrinsic nature of the long range magnetic order in the entire volume in the ferromagnetic phase. This is the first time that a diluted magnetic semiconductor with decoupled spin and charge doping is achieved in a fluoride compound. Comparing to the isostructure oxide counterpart of LaOZnSb, the fluoride DMS (Ba,K)F(Zn,Mn)As shows much improved semiconductive behavior that would be benefit for further application developments.

  15. Robust Manipulation of Magnetism in Dilute Magnetic Semiconductor (Ga,Mn)As by Organic Molecules.

    PubMed

    Wang, Xiaolei; Wang, Hailong; Pan, Dong; Keiper, Timothy; Li, Lixia; Yu, Xuezhe; Lu, Jun; Lochner, Eric; von Molnár, Stephan; Xiong, Peng; Zhao, Jianhua

    2015-12-22

    Surface adsorption of organic molecules provides a new method for the robust manipulation of ferromagnetism in (Ga,Mn)As. Electron acceptor and donor molecules yield significant enhancement and suppression, respectively, of ferromagnetism with modulation of the Curie temperature spanning 36 K. Dip-pen nanolithography is employed to directly pattern monolayers on (Ga,Mn)As, which is presented as a novel pathway toward producing magnetic nanostructures.

  16. A sensitive and label-free photoelectrochemical aptasensor using Co-doped ZnO diluted magnetic semiconductor nanoparticles.

    PubMed

    Li, Hongbo; Qiao, Yunfei; Li, Jing; Fang, Hailin; Fan, Dahe; Wang, Wei

    2016-03-15

    Co-doped ZnO diluted magnetic semiconductor as a novel photoelectric beacon was first constructed for photoelectrochemical (PEC) aptasensor of acetamiprid. The fabricated PEC sensing is based on the specific binding of acetamiprid and its aptamer, which induces the decreasement of enhanced photocurrent produced by the electron donor of quercetin. Co(2+) doping has a beneficial effect in extending the band width of light absorption of ZnO into the visible region and to promote the separation of the photoinduced carriers due to the sp-d exchange interactions existing between the band electrons and the localized d electrons of Co(2+). The fabricated aptasensor was linear with the concentration of acetamiprid in the range of 0.5-800 nmolL(-1) with the detection limit of 0.18 nmolL(-1). The presence of same concentration of other conventional pesticides did not interfere in the detection of acetamiprid and the recovery is between 96.2% and 103.7%. This novel PEC aptasensor has good performances with high sensitivity, good selectivity, low cost and portable features. The strategy of Co-doped ZnO diluted magnetic semiconductor paves a new way to improve the performances of PEC aptasensor.

  17. Magnetic field induced optical gain in a dilute nitride quaternary semiconductor quantum dot

    NASA Astrophysics Data System (ADS)

    Mageshwari, P. Uma; Peter, A. John; Lee, Chang Woo

    2016-10-01

    Effects of magnetic field strength on the electronic and optical properties are brought out in a Ga0.661In0.339N0.0554As0.9446/GaAs quantum dot for the applications of desired wavelength in opto-electronic devices. The band alignment is obtained using band anticrossing model and the model solid theory. The magnetic field dependent electron-heavy hole transition energies with the dot radius in a GaInNAs/GaAs quantum dot are investigated. The magnetic field induced oscillator strength as a function of dot radius is studied. The resonant peak values of optical absorption coefficients and the changes of refractive index with the application of magnetic field strength in a GaInNAs/GaAs quantum dot are obtained. The magnetic field induced threshold current density and the maximum optical gain are found in a GaInNAs/GaAs quantum dot. The results show that the optimum wavelength for fibre optical communication networks can be obtained with the variation of applied magnetic field strength and the outcomes may be useful for the design of efficient lasers based on the group III-N-V semiconductors.

  18. Structural, optical, magnetic and photocatalytic properties of Co doped CuS diluted magnetic semiconductor nanoparticles

    NASA Astrophysics Data System (ADS)

    Sreelekha, N.; Subramanyam, K.; Amaranatha Reddy, D.; Murali, G.; Ramu, S.; Rahul Varma, K.; Vijayalakshmi, R. P.

    2016-08-01

    Pristine and Co doped covellite CuS nanoparticles were synthesized in aqueous solution by facile chemical co-precipitation method with Ethylene Diamine Tetra Acetic Acid (EDTA) as a stabilizing agent. EDAX measurements confirmed the presence of Co in the CuS host lattice. Hexagonal crystal structure of pure and Co doped CuS nanoparticles were authenticated by XRD patterns. TEM images indicated that sphere-shape of nanoparticles through a size ranging from 5 to 8 nm. The optical absorption edge moved to higher energies with increase in Co concentration as indicated by UV-vis spectroscopy. Magnetic measurements revealed that bare CuS sample show sign of diamagnetic character where as in Co doped nanoparticles augmentation of room temperature ferromagnetism was observed with increasing doping precursor concentrations. Photocatalytic performance of the pure and Co doped CuS nanoparticles were assessed by evaluating the degradation rate of rhodamine B solution under sun light irradiation. The 5% Co doped CuS nanoparticles provide evidence for high-quality photocatalytic activity.

  19. Influence of nonmagnetic impurity scattering on spin dynamics in diluted magnetic semiconductors

    NASA Astrophysics Data System (ADS)

    Cygorek, M.; Ungar, F.; Tamborenea, P. I.; Axt, V. M.

    2017-01-01

    The doping of semiconductors with magnetic impurities gives rise not only to a spin-spin interaction between quasifree carriers and magnetic impurities but also to a local spin-independent disorder potential for the carriers. Based on a quantum kinetic theory for the carrier and impurity density matrices as well as the magnetic and nonmagnetic carrier-impurity correlations, the influence of the nonmagnetic scattering potential on the spin dynamics in DMS after optical excitation with circularly polarized light is investigated using the example of Mn-doped CdTe. It is shown that non-Markovian effects, which are predicted in calculations where only the magnetic carrier-impurity interaction is accounted for, can be strongly suppressed in the presence of nonmagnetic impurity scattering. This effect can be traced back to a significant redistribution of carriers in k -space which is enabled by the build-up of large carrier-impurity correlation energies. A comparison with the Markov limit of the quantum kinetic theory shows that, in the presence of an external magnetic field parallel to the initial carrier polarization, the asymptotic value of the spin polarization at long times is significantly different in the quantum kinetic and the Markovian calculations. This effect can also be attributed to the formation of strong correlations, which invalidates the semiclassical Markovian picture and it is stronger when the nonmagnetic carrier-impurity interaction is accounted for. In an external magnetic field perpendicular to the initial carrier spin, the correlations are also responsible for a renormalization of the carrier spin precession frequency. Considering only the magnetic carrier-impurity interaction, a significant renormalization is predicted for a very limited set of material parameters and excitation conditions. Accounting also for the nonmagnetic interaction, a relevant renormalization of the precession frequency is found to be more ubiquitous.

  20. Cobalt doped titanium dioxide, a possible candidate for dilute magnetic semiconductor

    NASA Astrophysics Data System (ADS)

    Rumaiz, Abdul K.

    Semiconductor spintronics is a promising new area of research where both the spin and transport of mobile charge carriers are manipulated in a quest to make faster electronic devices. The most important challenge in this exciting field is the integration of spintronics into conventional semiconductor devices. This requires a successful fabrication of a room temperature ferromagnetic semiconductor into which we can effectively generate and inject spin-polarized currents. In the first part of this study, it is our goal to investigate the structural, magnetic, transport, and electronic properties of Co doped and undoped TiO 2 thin films synthesized by pulsed laser deposition (PLD). For that purpose, TiO2 was doped with different Co concentrations and the role of oxygen vacancies in determining the structural, magnetic, and electronic properties wad studied. Four different doping levels (starting target composition 1,2,3 and 6%) of Co in TiO2 films have been prepared. All the targets for laser ablation were prepared by standard solid-state route. In each doping level, different vacancy levels are also investigated by ablating the films under two different oxygen partial pressures. All the samples prepared have shown room temperature ferromagnetism. Crystal structure, transport, and magnetic properties of CoxTi1-xO2-delta (0 ≤ x ≤ 0.06) thin films are investigated and are found to have a strong dependence on the oxygen partial pressure. X-Ray Diffraction (XRD) data reveal the presence of mixed phase material containing both anatase and rutile. However, these phases intertransform with the change in the oxygen partial pressure during the growth of the films. Both X-ray Photoemission Spectroscopy (XPS) and X-ray Absorption Near Edge Spectroscopy (XANES) confirm the oxidation state of Co as +2, suggesting a well-substituted Co in the TiO2 matrix. In addition to that, the asymmetry in the O 1s core level peak also suggests the presence of oxygen vacancies. The transport

  1. First principles study of Fe in diamond: A diamond-based half metallic dilute magnetic semiconductor

    SciTech Connect

    Benecha, E. M.; Lombardi, E. B.

    2013-12-14

    Half-metallic ferromagnetic ordering in semiconductors, essential in the emerging field of spintronics for injection and transport of highly spin polarised currents, has up to now been considered mainly in III–V and II–VI materials. However, low Curie temperatures have limited implementation in room temperature device applications. We report ab initio Density Functional Theory calculations on the properties of Fe in diamond, considering the effects of lattice site, charge state, and Fermi level position. We show that the lattice sites and induced magnetic moments of Fe in diamond depend strongly on the Fermi level position and type of diamond co-doping, with Fe being energetically most favorable at the substitutional site in p-type and intrinsic diamond, while it is most stable at a divacancy site in n-type diamond. Fe induces spin polarized bands in the band gap, with strong hybridization between Fe-3d and C-2s,2p bands. We further consider Fe-Fe spin interactions in diamond and show that substitutional Fe{sup +1} in p-type diamond exhibits a half-metallic character, with a magnetic moment of 1.0 μ{sub B} per Fe atom and a large ferromagnetic stabilization energy of 33 meV, an order of magnitude larger than in other semiconductors, with correspondingly high Curie temperatures. These results, combined with diamond's unique properties, demonstrate that Fe doped p-type diamond is likely to be a highly suitable candidate material for spintronics applications.

  2. Effective equations for the precession dynamics of electron spins and electron-impurity correlations in diluted magnetic semiconductors

    NASA Astrophysics Data System (ADS)

    Cygorek, M.; Axt, V. M.

    2015-08-01

    Starting from a quantum kinetic theory for the spin dynamics in diluted magnetic semiconductors, we derive simplified equations that effectively describe the spin transfer between carriers and magnetic impurities for an arbitrary initial impurity magnetization. Taking the Markov limit of these effective equations, we obtain good quantitative agreement with the full quantum kinetic theory for the spin dynamics in bulk systems at high magnetic doping. In contrast, the standard rate description where the carrier-dopant interaction is treated according to Fermi’s golden rule, which involves the assumption of a short memory as well as a perturbative argument, has been shown previously to fail if the impurity magnetization is non-zero. The Markov limit of the effective equations is derived, assuming only a short memory, while higher order terms are still accounted for. These higher order terms represent the precession of the carrier-dopant correlations in the effective magnetic field due to the impurity spins. Numerical calculations show that the Markov limit of our effective equations reproduces the results of the full quantum kinetic theory very well. Furthermore, this limit allows for analytical solutions and for a physically transparent interpretation.

  3. ZnMnO diluted magnetic semiconductor nanoparticles: Synthesis by laser ablation in liquids, optical and magneto-optical properties

    NASA Astrophysics Data System (ADS)

    Savchuk, A. I.; Perrone, A.; Lorusso, A.; Stolyarchuk, I. D.; Savchuk, O. A.; Shporta, O. A.

    2014-05-01

    Nanoparticles of ZnO and Zn1-xMnxO were synthesized by pulsed laser ablation in liquid medium (PLAL). Metal zinc target was used for preparing of pure ZnO nanostructures and Zn1-xMnxO ceramic plates served for preparing of ternary nanoparticles. As synthesized nanomaterials are characterized using scanning electron microscopy (SEM), energy dispersive spectroscopy analysis (EDS), atomic force microscopy (AFM), UV-vis absorption, photoluminescence and Faraday rotation spectroscopy. SEM images showed a well-defined flower-like nanostructures. Absorption edge of Zn0.95Mn0.05O nanoparticles in colloid solution exhibits blue shift due to confinement effect. The observed photoluminescence peaks are attributed to the band-edge transitions and vacancies or defects. The Faraday rotation as a function of photon energy demonstrates behavior typical for diluted magnetic semiconductors (DMSs) in paramagnetic state.

  4. Cd{sub 0.9375}Mn{sub 0.0625}S diluted magnetic semiconductor: A DFT study

    SciTech Connect

    Rani, Anita; Kaur, Kulwinder; Kumar, Ranjan

    2015-08-28

    We studied the spin polarized electronic band structures and magnetic properties of the diluted magnetic semiconductor Cd{sub 1-x}Mn{sub x}S in Zinc Blende phase (B3) with 0.0625 Mn by using ab initio method. The calculations were performed by using Density Functional Theory as implemented in the Spanish Initiative for Electronic Simulations with Thousands of Atoms code using local density approximation (LDA). Calculated electronic band structures and magnetic properties of Cd{sub 1-x}Mn{sub x}S are discussed in terms of contribution of Mn 3d{sup 5} 4s{sup 2}, Cd 4d{sup 10} 5s{sup 2}, S 3s{sup 2} 3p{sup 4} orbitals. The total magnetic moment is found to be 5.00 µb for Cd{sub 1−x}Mn{sub x}S at x=0.0625. This value indicate that Mn atom adds no hole carrier to the perfect CdS crystal. We found that Mn doped systems are ferromagnetic. Calculated results are in good agreement with previous studies.

  5. Li(Zn,Co,Mn)As: A bulk form diluted magnetic semiconductor with Co and Mn co-doping at Zn sites

    NASA Astrophysics Data System (ADS)

    Chen, Bijuan; Deng, Zheng; Li, Wenmin; Gao, Moran; Zhao, Jianfa; Zhao, Guoqiang; Yu, Shuang; Wang, Xiancheng; Liu, Qingqing; Jin, Changqing

    2016-11-01

    We report the synthesis and characterization of a series of bulk forms of diluted magnetic semiconductors Li(Zn1-x-yCoxMny)As with a crystal structure close to that of III-V diluted magnetic semiconductor (Ga,Mn)As. No ferromagnetic order occurs with single (Zn,Co) or (Zn, Mn) substitution in the parent compound LiZnAs. Only with co-doped Co and Mn ferromagnetic ordering can occur at the Curie temperature ˜40 K. The maximum saturation moment of the this system reached to 2.17 μB /Mn , which is comparable to that of Li (Zn,Mn)As. It is the first time that a diluted magnetic semiconductor with co-doping Co and Mn into Zn sites is achieved in "111" LiZnAs system, which could be utilized to investigate the basic science of ferromagnetism in diluted magnetic semiconductors. In addition, ferromagnetic Li(Zn,Co,Mn)As, antiferromagnetic LiMnAs, and superconducting LiFeAs share square lattice at As layers, which may enable the development of novel heterojunction devices in the future.

  6. Effect of oxygen vacancy on half metallicity in Ni-doped CeO{sub 2} diluted magnetic semiconductor

    SciTech Connect

    Saini, Hardev S. Saini, G. S. S.; Singh, Mukhtiyar; Kashyap, Manish K.

    2015-05-15

    The electronic and magnetic properties of Ni-doped CeO{sub 2} diluted amgentic semiconductor (DMS) including the effect of oxygen vacancy (V{sub o}) with doping concentration, x = 0.125 have been calculated using FPLAPW method based on Density Functional Theory (DFT) as implemented in WIEN2k. In the present supercell approach, the XC potential was constructed using GGA+U formalism in which Coulomb correction is applied to standard GGA functional within the parameterization of Perdew-Burke-Ernzerhof (PBE). We have found that the ground state properties of bulk CeO{sub 2} compound have been modified significantly due to the substitution of Ni-dopant at the cation (Ce) site with/without V{sub O} and realized that the ferromagnetism in CeO{sub 2} remarkably depends on the V{sub o} concentrations. The presence of V{sub o}, in Ni-doped CeO{sub 2}, can leads to strong ferromagnetic coupling between the nearest neighboring Ni-ions and induces a HMF in this compound. Such ferromagnetic exchange coupling is mainly attributed to spin splitting of Ni-d states, via electrons trapped in V{sub o}. The HMF characteristics of Ni-doped CeO{sub 2} including V{sub o} makes it an ideal material for spintronic devices.

  7. Tunable electronic structure in dilute magnetic semiconductor Sr{sub 3}SnO/c-YSZ/Si (001) epitaxial heterostructures

    SciTech Connect

    Lee, Y. F.; Narayan, J.; Schwartz, J.

    2014-10-28

    We report a systematic study of the structural, physical, and chemical properties of epitaxial thin films of emerging dilute magnetic semiconductor (DMS) Sr{sub 3}SnO (SSO) integrated with Si (100) prepared by various post-growth annealing treatments. The transport properties of these films are primarily governed by oxygen vacancies and the results are explained with the variable-range hopping model. The increased oxygen vacancy concentration generated by post-growth vacuum annealing results in a shorter hopping distance and reduced hopping energy and Coulomb gap, leading to lower resistivity; oxygen annealing shows the opposite effects. The work function ranges from 4.54 to 4.02 eV and shows a negative linear relationship with oxygen vacancy concentration, accompanied by a 0.42 eV shift in the surface Fermi level. The transport and ultraviolet photoelectron spectroscopy probes agree quantitatively on measurement of the resistivity and surface electronic structure. The results provide a direct and consistent explanation that the property changes in the bulk and at the surface are primarily attributed to oxygen vacancies, which are believed to be the carriers in the SSO thin films. The ability to manipulate the work function and oxygen vacancy concentration in epitaxial DMS SSO thin films offers great potential for the development of spintronic devices.

  8. Magnetic properties of the layered III-VI diluted magnetic semiconductor Ga1-xFexTe

    NASA Astrophysics Data System (ADS)

    Pekarek, T. M.; Edwards, P. S.; Olejniczak, T. L.; Lampropoulos, C.; Miotkowski, I.; Ramdas, A. K.

    2016-05-01

    Magnetic properties of single crystalline Ga1-xFexTe (x = 0.05) have been measured. GaTe and related layered III-VI semiconductors exhibit a rich collection of important properties for THz generation and detection. The magnetization versus field for an x = 0.05 sample deviates from the linear response seen previously in Ga1-xMnxSe and Ga1-xMnxS and reaches a maximum of 0.68 emu/g at 2 K in 7 T. The magnetization of Ga1-xFexTe saturates rapidly even at room temperature where the magnetization reaches 50% of saturation in a field of only 0.2 T. In 0.1 T at temperatures between 50 and 400 K, the magnetization drops to a roughly constant 0.22 emu/g. In 0 T, the magnetization drops to zero with no hysteresis present. The data is consistent with Van-Vleck paramagnetism combined with a pronounced crystalline anisotropy, which is similar to that observed for Ga1-xFexSe. Neither the broad thermal hysteresis observed from 100-300 K in In1-xMnxSe nor the spin-glass behavior observed around 10.9 K in Ga1-xMnxS are observed in Ga1-xFexTe. Single crystal x-ray diffraction data yield a rhombohedral space group bearing hexagonal axes, namely R3c. The unit cell dimensions were a = 5.01 Å, b = 5.01 Å, and c = 17.02 Å, with α = 90°, β = 90°, and γ = 120° giving a unit cell volume of 369 Å3.

  9. Resonant inelastic scattering in dilute magnetic semiconductors by x-ray fluorescence spectroscopy

    SciTech Connect

    Lawniczak-Jablonska, K. |; Jia, J.J.; Underwood, J.H.

    1997-04-01

    As modern, technologically important materials have become more complex, element specific techniques have become invaluable in studying the electronic structure of individual components from the system. Soft x-ray fluorescence (SXF) and absorption (SXA) spectroscopies provide a unique means of measuring element and angular momentum density of electron states, respectively, for the valence and conducting bands in complex materials. X-ray absorption and the decay through x-ray emission are generally assumed to be two independent one-photon processes. Recent studies, however have demonstrated that SXF excited near the absorption threshold generate an array of spectral features that depend on nature of materials, particularly on the localization of excited states in s and d-band solids and that these two processes can no be longer treated as independent. Resonant SXF offers thus the new way to study the dynamics of the distribution of electronic valence states in the presence of a hole which is bound to the electron low lying in the conduction band. This process can simulate the interaction between hole-electron pair in wide gap semiconductors. Therefore such studies can help in understanding of transport and optics phenomena in the wide gap semiconductors. The authors report the result of Mn and S L-resonant emission in Zn{sub 1{minus}x}Mn{sub x}S (with x=0.2 and 0.3) and MnS as the energy of exciting radiation is tuned across the Mn and S L{sub 3,2} absorption edge, along with the resonant excited spectra from elemental Mn as a reference.

  10. Diluted magnetic semiconductors based on II-VI, III-VI, and IV-VI compounds

    NASA Astrophysics Data System (ADS)

    Lashkarev, G. V.; Sichkovskiyi, V. I.; Radchenko, M. V.; Karpina, V. A.; Butorin, P. E.; Dmitriev, O. I.; Lazorenko, V. I.; Slyn'ko, E. I.; Lytvyn, P. M.; Jakiela, R.; Knoff, W.; Story, T.; Aleshkevych, P.

    2009-01-01

    Chemical and phase composition, magnetic susceptibility, SIMS, magnetic force microscopy, and neutron diffraction data for Ge1-x-ySnxMnyTe, InSe⟨Mn⟩, and ZnO⟨Co, Mn⟩ single crystals are investigated over a wide range of temperatures and magnetic fields. For Ge1-x-ySnxMnyTe the existence of ferromagnetic (FM) ordering with a Curie temperature TC˜50K, due to an indirect exchange interaction between Mn ions via the degenerate hole gas, is established. It is shown that at T <50K the ferromagnetic regions of the crystal form a spin-glass phase. In InSe⟨Mn⟩ it is found that hysteresis loops of the magnetic moment M(H ) are observed up to 350K. They attest to the existence of ferromagnetic ordering, which is apparently due to ferromagnetic clusters in which a superexchange of the Mn ions via the Se anions is proposed, and to an indirect interaction via the 2D electron gas. At T <70K a period doubling of the magnetic sublattice of α-MnSe second-phase inclusions is observed, and their distribution in the layered structure of the InSe⟨Mn⟩ host matrix has a regular character, forming a self-organized FM/AFM superlattice. In ZnO⟨Co, Mn⟩ the temperature dependence of M obeys a Curie law. When the solubility limit of Co in ZnO is exceeded, hysteresis loops are observed as a consequence of the appearance of a ferromagnetic second phase. In ZnO⟨Mn⟩ samples and also in some ZnO⟨Co⟩ samples with Co content below the solubility limit an antiferromagnetic (AFM) interaction takes place.

  11. Raman Scattering Studies in Dilute Magnetic Semiconductor Zn(1-x)Co(x)O

    NASA Technical Reports Server (NTRS)

    Samanta, K.; Bhattacharya, P.; Katiyar, R. S.; Iwamoto, W.; Pagiluso, P. G.; Rettori, C.

    2006-01-01

    Raman spectra of ZnO and Co substituted Zn1-xCoxO (ZCO) were carried out using the Raman microprobe system with an p.,+ ion laser source of 514.5 nm wavelength. The shift towards the lower frequency side of the nonpolar E210w mode and the broadening due to Co substitution in ZnO were analyzed using the phonon confinement model. The magnetic measurements showed ferromagnetic behavior with the maximum saturation magnetization (1.2micron Beta/ErCo) for 10% Co substitution, which decreased wi th at further increase in Co concentrations. The intensities of E1(LO) at 584 cm-1 and multiphonon modes at 540 cm-1 were increased with an increase in Co substitution. The additional Raman modes in ceramic targets of ZCO spectra for higher concentration of Co substitution (x=15%-20%) were identified to be due to the spinel ZnCo2O4 secondary phase.

  12. Chemical trend of exchange coupling in II-VI diluted magnetic semiconductors

    NASA Astrophysics Data System (ADS)

    Chanier, Thomas; Hayn, Roland; Virot, François

    2010-03-01

    We present an ab-initio study of the magnetic couplings in Mn- and Co-doped II-VI DMS ZnA (A=O,S,Se,Te). We show the necessity of taking into account the strong electron correlation on the transition metal (TM) 3d level to reproduce correctly the experimental chemical trend. Within the LSDA+U (local spin density approximation with a Hubbard-type correction to TM 3d electrons), we find (i) the d-d exchange couplings between nearest-neighbor magnetic ions to be antiferromagnetic (AFM) of the order of -1 meV and (ii) the sp-d exchange constants between magnetic ions and conduction (valence) band electrons (holes) Nα (Nβ) to be FM (AFM) of the order of 0.1 eV (-1 eV). In ZnMnO and ZnCoO, the strong p-d hybridisation leads to the presence of a bound state above the valence band, the failure of the commonly-used Larson perturbation theory formulae for p-d and d-d exchange interactions [1] and prevents high-Tc ferromagnetism [2]. [1] B. Larson et al. , PRB 37, 4137 (1988) [2] T. Chanier et al. , PRB 79, 205204 (2009)

  13. Dilute ferromagnetic semiconductors: Physics and spintronic structures

    NASA Astrophysics Data System (ADS)

    Dietl, Tomasz; Ohno, Hideo

    2014-01-01

    This review compiles results of experimental and theoretical studies on thin films and quantum structures of semiconductors with randomly distributed Mn ions, which exhibit spintronic functionalities associated with collective ferromagnetic spin ordering. Properties of p-type Mn-containing III-V as well as II-VI, IV-VI, V2-VI3, I-II-V, and elemental group IV semiconductors are described, paying particular attention to the most thoroughly investigated system (Ga,Mn)As that supports the hole-mediated ferromagnetic order up to 190 K for the net concentration of Mn spins below 10%. Multilayer structures showing efficient spin injection and spin-related magnetotransport properties as well as enabling magnetization manipulation by strain, light, electric fields, and spin currents are presented together with their impact on metal spintronics. The challenging interplay between magnetic and electronic properties in topologically trivial and nontrivial systems is described, emphasizing the entangled roles of disorder and correlation at the carrier localization boundary. Finally, the case of dilute magnetic insulators is considered, such as (Ga,Mn)N, where low-temperature spin ordering is driven by short-ranged superexchange that is ferromagnetic for certain charge states of magnetic impurities.

  14. Femtosecond optical characterization and applications in cadmium(manganese) telluride diluted magnetic semiconductors

    NASA Astrophysics Data System (ADS)

    Wang, Daozhi

    This thesis is devoted to the optical characterization of Cd(Mn)Te single crystals. I present the studies of free-carrier dynamics and generation and detection of coherent acoustic phonons (CAPS) using time-resolved femtosecond pump-probe spectroscopy. The giant Faraday effect and ultrafast responsivity of Cd(Mn)Te to sub-picosecond electromagnetic transients are also demonstrated and discussed in detail. The first, few-picosecond-long electronic process after the initial optical excitation exhibits very distinct characteristic dependence on the excitation condition, and in case of Cd(Mn)Te, it has been attributed to the collective effects of band filling, band renormalization, and two-photon absorption. A closed-form, analytic expression for the differential reflectivity induced by the CAPs is derived based on the propagating-strain-pulse model and it accounts very well for our experimental observations. The accurate values of the Mn concentration and longitudinal sound velocity nu s in Cd(Mn)Te were obtained by fitting the data of the refractive index dependence on the probe wavelength to the Schubert model. In Cd 0.91Mn0.09Te, nus was found to be 3.6x103 m/s. Our comparison studies from the one-color and two-color experiments reveal that the intrinsic phonon lifetime in Cd(Mn)Te was at least on the order of nanoseconds, and the observed exponential damping of the CAP oscillations was due to the finite absorption depth of the probe light. Optically-induced electronic stress has been demonstrated to be the main generation mechanism of CAPs. We also present the giant Faraday effect in the Cd(Mn)Te and the spectra of the Verdet constant, which is mainly due to the exchange interaction between the Mn ions and band electrons. The spectral characteristics of the Verdet constant in Cd(Mn)Te exhibit very unique features compared to that in pure semiconductors. In our time-resolved sampling experiments at the room temperature, the response of the Cd(Mn)Te, particularly

  15. Synthesis and characterization of three-dimensional transition metal ions doped zinc oxide based dilute magnetic semiconductor thin films

    NASA Astrophysics Data System (ADS)

    Samanta, Kousik

    Dilute magnetic semiconductors (DMS), especially 3d-transition metal (TM) doped ZnO based DMS materials are the most promising candidates for optoelectronics and spintronics applications; e.g. in spin light emitting diode (SLED), spin transistors, and spin field effect transistors (SFET), etc. In the present dissertation, thin films of Zn1-xTMxO (TM = Co2+, Cu2+, and Mn2+) were grown on (0001) oriented Al2O3 substrates by pulsed laser deposition (PLD) technique. The films were highly c-axis oriented, nearly single crystalline, and defects free for a limited concentration of the dilution of transition metal ions. In particular, we have obtained single crystalline phases of Zn1-xTMxO thin films for up to 10, 3, and 5 stoichiometric percentages of Co2+, Cu2+, and Mn2+ respectively. Raman micro-probe system was used to understand the structural and lattice dynamical properties at different physical conditions. The confinement of optical phonons in the disorder lattice was explained by alloy potential fluctuation (APF) using a spatial correlation (SC) model. The detailed analysis of the optical phonon behavior in disorder lattice confirmed the substitution of the transition metal ions in Zn 2+ site of the ZnO host lattice. The secondary phases of ZnCo 2O4, CuO, and ZnMn2O4 were detected in higher Co, Cu, and Mn doped ZnO thin films respectively; where as, XRD did not detect these secondary phases in the same samples. Room temperature ferromagnetism was observed in Co2+ and Cu2+ ions doped ZnO thin films with maximum saturation magnetization (Ms) of 1.0 and 0.76 muB respectively. The origin of the observed ferromagnetism in Zn1-xCoxO thin films was tested by the controlled introduction of shallow donors (Al) in Zn0.9-x Co0.1O:Alx (x = 0.005 and 0.01) thin films. The saturation magnetization for the 10% Co-doped ZnO (1.0 muB /Co) at 300K reduced (˜0.25 muB/Co) due to Al doping. The observed ferromagnetism and the reduction due to Al doping can be explained by the Bound

  16. Structural, optical, and magnetic properties of Cu- and Ni-codoped CdO dilute magnetic nanocrystalline semiconductor: effect of hydrogen post-treatment

    NASA Astrophysics Data System (ADS)

    Dakhel, A. A.; Bououdina, M.

    2015-06-01

    Cadmium oxide codoped with Cu and Ni ions powders was synthesised by thermal co-decomposition of a mixture of cadmium, copper, and nickel acetylacetonates. The mass ratio of Cu/Cd was fixed, while the Ni/Cd mass ratio was varied systematically. The purpose of the present study is to prepare powders having room-temperature ferromagnetic (RT-FM) properties. X-ray fluorescence (XRF) and X-ray diffraction (XRD) confirm the purity and the formation of single nanocrystalline structure of the as-prepared powders. The energy bandgap of the as-prepared powders was found to vary slightly and then increases by 3.96-38.02 % after post-H2-treatment. Magnetic measurements reveal that all as-prepared doped CdO powders gained partial (RT-FM) properties. Furthermore, the created RT-FM is dependent on the Ni% doping level. After annealing under H2 gas, a strong enhancement of RT-FM was observed, especially for 1.2 % Ni-doping-level powder where the whole powder became ferromagnetic with coercivity, remanence, and saturation magnetisation of 249.2 Oe, 4.52 memu/g, and 14.57 memu/g, respectively, representing an increase by ~241.3, 1062, and 1700 %, respectively, in comparison with the as-prepared sample. Thus, it was proved, for the first time, the possibility of producing of codoped CdO with RT-FM, where the magnetic characteristics can be tailored by doping and post-treatment under H2 atmosphere, thus a new potential candidate for dilute magnetic semiconductor (DMS).

  17. Microstructures, magnetic and electric properties of diluted magnetic semiconductors InTe{sub 1−x} Fe{sub x} (Co{sub x})

    SciTech Connect

    El-Sayed, Karimat; Sedeek, K.; Heiba, Z.K.; Hantour, H.H.

    2013-06-01

    Highlights: ► The prepared InTe{sub 0.9}Fe{sub 0.1} was found to be ferromagnetic at room temperature and can be characterized as diluted magnetic semiconductors. ► The presence of staking faults, various types of defects, strained lattice, grain boundaries and the impurity of minor non-magnetic phase were suggested to participate in high temperature ferromagnetism. - Abstract: InTe compound doped by 10% of Fe or Co respectively was synthesized. X-ray diffraction (XRD), transmission electron microscope (TEM), scanning electron microscope (SEM), energy dispersive X-ray (EDX), vibrating sample magnetometer (VSM) and Kiethley electrometer were used for characterizing the prepared samples. XRD show the presence of InTe{sub 0.9}Fe{sub 0.1} or InTe{sub 0.9}Co{sub 0.1} together with minor In{sub 4}Te{sub 3} phase. InTe{sub 0.9}Fe{sub 0.1} is ferromagnetic with high Curie and high blocking temperature, while InTe{sub 0.9}Co{sub 0.1} is antiferromagnetic with two high Neels temperatures. σRT of InTe{sub 0.9}Fe{sub 0.1} and InTe{sub 0.9}Co{sub 0.1} are greater than those of InTe. The higher conductivity is due to the higher carrier's density obtained from the interaction of the sp-d orbitals, of the electric and magnetic system. The presence of In{sub 4}Te{sub 3} minor phase and different kinds of defects are taking major roles in the formation of high Tc ferromagnetism and antiferromagnetism.

  18. Influence of Fe doping on the structural, optical and magnetic properties of ZnS diluted magnetic semiconductor

    NASA Astrophysics Data System (ADS)

    Saikia, D.; Raland, RD.; Borah, J. P.

    2016-09-01

    Fe doped ZnS nanoparticles with different concentrations of Fe, synthesized by microwave assisted co-precipitation method have been reported. The incorporation of Fe2+ and Fe3+ ions into ZnS lattice are confirmed by X-ray diffraction (XRD) and Electron Paramagnetic resonance (EPR) study. XRD and High Resolution Transmission electron Microscope (HRTEM) results confirm the phase purity of the samples and indicate a reduction of the particle size with increase in Fe concentration. EDAX analysis confirms the presence of Zn, S and Fe in the samples. A yellow-orange emission peak is observed in Photoluminescence (PL) spectra which exhibits the Characteristic 4T2 (4G)-6A1 (6S) transition of Fe3+ ion. The room temperature magnetic studies as analyzed from M-H curves were investigated from vibrating samples magnetometer (VSM) which shows a weak ferro and superparamagnetic like behavior in 1% and 3% Fe-doped ZnS nanocrystals, whereas; at 10% Fe-doping concentrations, antiferromagnetism behavior is achieved. The ZFC-FC measurement reveals that the blocking temperature of the nanoparticle is above the room temperature.

  19. Enhancement of two photon absorption with Ni doping in the dilute magnetic semiconductor ZnO crystalline nanorods

    NASA Astrophysics Data System (ADS)

    Rana, Amit Kumar; J, Aneesh; Kumar, Yogendra; M. S, Arjunan; Adarsh, K. V.; Sen, Somaditya; Shirage, Parasharam M.

    2015-12-01

    In this letter, we have investigated the third-order optical nonlinearities of high-quality Ni doped ZnO nanorods crystallized in wurtzite lattice, prepared by the wet chemical method. In our experiments, we found that the two photon absorption coefficient (β) increases by as much as 14 times, i.e., 7.6 ± 0.4 to 112 ± 6 cm/GW, when the Ni doping is increased from 0% to 10%. The substantial enhancement in β is discussed in terms of the bandgap scaling and Ni doping. Furthermore, we also show that the optical bandgap measured by UV-Vis and photoluminescence spectroscopies, continuously redshift with increasing Ni doping concentration. We envision that the strong nonlinear optical properties together with their dilute magnetic effects, they form an important class of materials for potential applications in magneto-optical and integrated optical chips.

  20. Enhancement of two photon absorption with Ni doping in the dilute magnetic semiconductor ZnO crystalline nanorods

    SciTech Connect

    Rana, Amit Kumar; Kumar, Yogendra; Arjunan, M.S.; Sen, Somaditya; Shirage, Parasharam M. E-mail: paras.shirage@gmail.com; J, Aneesh; Adarsh, K. V.

    2015-12-07

    In this letter, we have investigated the third-order optical nonlinearities of high-quality Ni doped ZnO nanorods crystallized in wurtzite lattice, prepared by the wet chemical method. In our experiments, we found that the two photon absorption coefficient (β) increases by as much as 14 times, i.e., 7.6 ± 0.4 to 112 ± 6 cm/GW, when the Ni doping is increased from 0% to 10%. The substantial enhancement in β is discussed in terms of the bandgap scaling and Ni doping. Furthermore, we also show that the optical bandgap measured by UV-Vis and photoluminescence spectroscopies, continuously redshift with increasing Ni doping concentration. We envision that the strong nonlinear optical properties together with their dilute magnetic effects, they form an important class of materials for potential applications in magneto-optical and integrated optical chips.

  1. Exchange couplings for Mn ions in CdTe: Validity of spin models for dilute magnetic II-VI semiconductors

    NASA Astrophysics Data System (ADS)

    Linneweber, Thorben; Bünemann, Jörg; Löw, Ute; Gebhard, Florian; Anders, Frithjof

    2017-01-01

    We employ density-functional theory (DFT) in the generalized gradient approximation (GGA) and its extensions GGA +U and GGA+Gutzwiller to calculate the magnetic exchange couplings between pairs of Mn ions substituting Cd in a CdTe crystal at very small doping. DFT(GGA) overestimates the exchange couplings by a factor of 3 because it underestimates the charge-transfer gap in Mn-doped II-VI semiconductors. Fixing the nearest-neighbor coupling J1 to its experimental value in GGA +U , in GGA+Gutzwiller, or by a simple scaling of the DFT(GGA) results provides acceptable values for the exchange couplings at second-, third-, and fourth-neighbor distances in Cd(Mn)Te, Zn(Mn)Te, Zn(Mn)Se, and Zn(Mn)S. In particular, we recover the experimentally observed relation J4>J2,J3 . The filling of the Mn 3 d shell is not integer, which puts the underlying Heisenberg description into question. However, using a few-ion toy model the picture of a slightly extended local moment emerges so that an integer 3 d -shell filling is not a prerequisite for equidistant magnetization plateaus, as seen in experiment.

  2. Band-edge exciton transitions in (Ga 1- xMn x)N diluted magnetic semiconductor films with above room temperature ferromagnetic transition

    NASA Astrophysics Data System (ADS)

    Jeon, H. C.; Kang, T. W.; Kim, T. W.; Cho, Y. H.

    2006-06-01

    (Ga 1- xMn x)N thin films grown on GaN buffer layers by using molecular beam epitaxy were investigated with the goal of producing diluted magnetic semiconductors (DMSs) with band-edge exciton transitions for applications in optomagnetic devices. The magnetization curve as a function of the magnetic field at 5 K indicated that ferromagnetism existed in the (Ga 1- xMn x)N thin films, and the magnetization curve as a function of the temperature showed that the ferromagnetic transition temperature of the (Ga 1- xMn x)N thin film was above room temperature. Photoluminescence and photoluminescence excitation spectra showed that band-edge exciton transitions in (Ga 1- xMn x)N thin films appeared. These results indicate that the (Ga 1- xMn x)N DMSs with a magnetic single phase hold promise for potential applications in spin optoelectronic devices in the blue region of the spectrum.

  3. Microstructural and Optical properties of transition metal (Cu) doped ZnO diluted magnetic semiconductor nano thin films fabricated by sol gel method

    NASA Astrophysics Data System (ADS)

    Ozturk, Ozgur; Asikuzun, Elif; Tasci, A. Tolga; Arda, Lutfi; Demirozu Senol, Sevim; Celik, Sukru; Terzioglu, Cabir

    Undoped and Cu (Copper) doped ZnO (Zn1-xCuxO) semiconductor thin films were produced by using sol-gel method. Cu was doped 1%, 2%, 3%, 4% and 5% ratio. Methanol and monoethanolamine (MEA) were used as solvent and stabilizer. In this study, the effect of Cu doping was investigated on microstructural and optical properties of ZnO DMS thin films. XRD, SEM, AFM and UV-VIS spectrometer measurements were performed for the microstructural and optical characterization. XRD, SEM and AFM results were showed that all of Cu doped ZnO based thin films have a hexagonal structure. The grain size of Cu doped ZnO thin films and morphology of surface were changed with increasing Cu doping. The optical transmittance of transition metal (Cu) doped ZnO thin films were decreased with doping. Keywords:Diluted Magnetic Semiconductor (DMS), Thin Film, Cu-doping, Bandgap Energy, ZnO. This research has been supported by the Kastamonu University Scientific Research Projects Coordination Department under the Grant No. KU-BAP-05/2015-12 and the Scientific and Technological Research Council of Turkey (TUBITAK) Project No. 114F259.

  4. K and Mn co-doped BaCd{sub 2}As{sub 2}: A hexagonal structured bulk diluted magnetic semiconductor with large magnetoresistance

    SciTech Connect

    Yang, Xiaojun; Zhang, Pan; Jiang, Hao; Luo, Yongkang; Chen, Qian; Feng, Chunmu; Tao, Qian; Cao, Guanghan; Xu, Zhu-An; Li, Yuke; Cao, Chao; Dai, Jianhui

    2013-12-14

    A bulk diluted magnetic semiconductor was found in the K and Mn co-doped BaCd{sub 2}As{sub 2} system. Different from recently reported tetragonal ThCr{sub 2}Si{sub 2}-structured II-II-V based (Ba,K)(Zn,Mn){sub 2}As{sub 2}, the Ba{sub 1−y}K{sub y}Cd{sub 2−x}Mn{sub x}As{sub 2} system has a hexagonal CaAl{sub 2}Si{sub 2}-type structure with the Cd{sub 2}As{sub 2} layer forming a honeycomb-like network. The Mn concentration reaches up to x ∼ 0.4. Magnetization measurements show that the samples undergo ferromagnetic transitions with Curie temperature up to 16 K. With low coercive field of less than 10 Oe and large magnetoresistance of about −70%, the hexagonal structured Ba{sub 1−y}K{sub y}Cd{sub 2−x}Mn{sub x}As{sub 2} can be served as a promising candidate for spin manipulations.

  5. Generalized gradient calculations of magneto-electronic properties for diluted magnetic semiconductors ZnMnS and ZnMnSe

    NASA Astrophysics Data System (ADS)

    Méçabih, S.; Benguerine, K.; Benosman, N.; Abbar, B.; Bouhafs, B.

    2008-10-01

    Using the first-principles method, we investigate the electronic and magnetic properties of the diluted magnetic semiconductors Zn 1-xMn xS and Zn 1-xMn xSe with 25% of Mn. The calculations are performed by a developed full-potential augmented plane wave plus local orbitals (FP-L/APW+lo) method within the spin density functional theory. As exchange-correlation potential we used the new generalized gradient approximation GGA form. Structural properties are determined from the total energy calculations. We show that the cohesive energy of ZnMnS and ZnMnSe exceeds that of the parent elements ZnS and ZnSe. We discuss the electronic structures, total and partial densities of states and local moments. We have calculated the Mn 3d spin-exchange splitting energies Δ x( d), which reflect the effective potential of the majority and the minority spin. From the charge spin densities calculations, we study the nature of the bonding and the effect of the Mn 3d states on these densities. Furthermore, we found that p-d hybridization reduces the local moment of Mn from its free space value of 5.0 μB.

  6. Weak ferromagnetism and temperature dependent dielectric properties of Zn{sub 0.9}Ni{sub 0.1}O diluted magnetic semiconductor

    SciTech Connect

    Ahmed, Raju; Moslehuddin, A.S.M.; Mahmood, Zahid Hasan; Hossain, A.K.M. Akther

    2015-03-15

    Highlights: • Single phase wurtzite structure was confirmed from XRD analysis. • Weak ferromagnetic behaviour at room temperature. • Pure semiconducting properties confirmed from temperature dependent conductivity. • Smaller dielectric properties at higher frequency. • Possible potential application in high frequency spintronic devices. - Abstract: In this study the room temperature ferromagnetic behaviour and dielectric properties of ZnO based diluted magnetic semiconductor (DMS) have been investigated using nominal chemical composition Zn{sub 0.9}Ni{sub 0.1}O. The X-ray diffraction analysis confirmed formation of single phase hexagonal wurtzite structure. An increase in grain size with increasing sintering temperature was observed from scanning electron microscopy. Field dependent DC magnetization values indicated dominant paramagnetic ordering along with a slight ferromagnetic behaviour at room temperature. Frequency dependent complex initial permeability showed some positive values around 12 at room temperature. In dielectric measurement, an increasing trend of complex permittivity, loss tangent and ac conductivity with increasing temperature were observed. The temperature dependent dispersion curves of dielectric properties revealed clear relaxation at higher temperature. Frequency dependent ac conductivity was found to increase with frequency whereas complex permittivity and loss tangent showed an opposite trend.

  7. Energy states, transport, and magnetotransport in diluted magnetic semiconductor (Ga, Mn)As with quantum well InGaAs.

    PubMed

    Shchurova, L Yu; Kulbachinskii, V A

    2011-03-01

    We investigate energy levels, thermodynamic, transport and magnetotransport properties of holes in GaAs structure with quantum well InGaAs delta-doped by C and Mn. We present self-consistent calculations for energy levels in the quantum well for different degrees of ionization of Mn impurity. The magnetoresistance of holes in the quantum well is calculated. We explain observed negative magnetoresistance by the reduction of spin-flip scattering on magnetic ions due to aligning of spins with magnetic field.

  8. Rutile-type Co doped SnO2 diluted magnetic semiconductor nanoparticles: Structural, dielectric and ferromagnetic behavior

    NASA Astrophysics Data System (ADS)

    Mehraj, Sumaira; Shahnawaze Ansari, M.; Alimuddin

    2013-12-01

    Nanoparticles of basic composition Sn1-xCoxO2 (x=0.00, 0.01, 0.03, 0.05 and 0.1) were synthesized through the citrate-gel method and were characterized for structural properties using X-ray diffraction (XRD), Scanning electron microscopy (SEM), Energy dispersive X-ray spectroscopy (EDS) and Fourier transform infrared spectroscopy (FT-IR). XRD analysis of the powder samples sintered at 500 °C for 12 h showed single phase rutile type tetragonal structure and the crystallite size decreased as the cobalt content was increased. FT-IR spectrum displayed various bands that came due to fundamental overtones and combination of O-H, Sn-O and Sn-O-Sn entities. The effect of Co doping on the electrical and magnetic properties was studied using dielectric spectroscopy and vibrating sample magnetometer (VSM) at room temperature. The dielectric parameters (ε, tan δ and σac) show their maximum value for 10% Co doping. The dielectric loss shows anomalous behavior with frequency where it exhibits the Debye relaxation. The variation of dielectric properties and ac conductivity with frequency reveals that the dispersion is due to the Maxwell-Wagner type of interfacial polarization in general and hopping of charge between Sn2+ and Sn4+ as well as between Co2+ and Co3+ ions. The complex impedance analysis was used to separate the grain and grain boundary contributions in the system which shows that the conduction process in grown nanoparticles takes place predominantly through grain boundary volume. Hysteresis loops were observed clearly in M-H curves from 0.01 to 0.1% Co doped SnO2 samples. The saturation magnetization of the doped samples increased slightly with increase of Co concentration. However pure SnO2 displayed paramagnetism which vanished at higher values of magnetic field.

  9. The effects of group-I elements co-doping with Mn in ZnO dilute magnetic semiconductor

    NASA Astrophysics Data System (ADS)

    Zhang, Liqiang; Zhang, Yinzhu; Ye, Zhizhen; Lu, Jianguo; Lu, Bin; He, Bo

    2012-06-01

    Mn-Li codoped ZnO (Zn(Mn,Li)O), Mn-Na codoped ZnO (Zn(Mn,Na)O), and Mn-K codoped ZnO (Zn(Mn,K)O) thin films were deposited on quartz substrates by pulsed laser deposition. The doping effects of group-I elements (e.g., Li, Na, and K) on the structural, magnetic, and optical properties of the Mn doped ZnO (ZnMnO) films were discussed. X-ray diffraction and K-edge x-ray absorption near-edge structure measurements revealed that all the films showed a hexagonal wurtzite ZnO structure, and no other clusters, precipitates, or second phases were detected. Zn(Mn,Na)O and Zn(Mn,Li)O films showed a weak p-type conductivity, while the Zn(Mn,K)O film appeared a highly resistivity. The saturation magnetization of Zn(Mn,Na)O and Zn(Mn,Li)O films was 1.2 and 0.18 μB/Mn, respectively. The hole-related defects, induced by doping with a low content of Li or Na, contributed to the room temperature ferromagnetism in the ZnMnO system.

  10. Local structure analysis of diluted magnetic semiconductor Co and Al co-doped ZnO nanoparticles

    SciTech Connect

    Hyodo, K.; Morimoto, S.; Yamazaki, T.; Ishikawa, T.; Ichiyanagi, Y.; Utsumi, J.

    2016-02-01

    In this study, Co and Al ions co-doped ZnO nanoparticles (Zn(Al, Co)O NPs) were prepared by our original chemical preparation method. The obtained samples prepared by this method, were encapsulated in amorphous SiO{sub 2}. X-ray diffraction (XRD) results showed Zn(Al, Co)O NPs had a single-phase nature with hexagonal wurtzite structure. These particle sizes could be controlled to be approximately 30 nm. We investigate the effect that the increase in the carrier has on the magnetization by doping Al to Co-doped ZnO NPs. The local structures were qualitatively analyzed using X-ray absorption fine structure (XAFS) measurements.

  11. Ab initio calculation and analysis of the properties of digital magnetic heterostructures and diluted magnetic semiconductors of IV and III-V groups

    NASA Astrophysics Data System (ADS)

    Uspenskii, Yu. A.; Kulatov, E. T.

    2009-04-01

    We present the first-principles calculations of digital magnetic heterostructures Si/M, Ge/M. GaAs/M, GaSb/M, GaN/M and GaN/M (50%) with M=Cr, Mn, Fe, and Co. The interaction between magnetic dopants results in a wide spin-polarized two-dimensional band inside the gap. It is found that beginning occupation of the minority-spin band greatly increases the energy of the ferromagnetic (FM) state and leads, as a rule, to the antiferromagnetic (AFM) spin ordering. This mechanism causes transition to the AFM state, when interaction between magnetic atoms is too strong, and defines the optimum of Curie temperature as a function of transition element concentration in magnetic layers.

  12. Atomically thin dilute magnetism in Co-doped phosphorene

    NASA Astrophysics Data System (ADS)

    Seixas, L.; Carvalho, A.; Castro Neto, A. H.

    2015-04-01

    Two-dimensional dilute magnetic semiconductors can provide fundamental insights into the very nature of magnetic order and their manipulation through electron and hole doping. Besides the fundamental interest, due to the possibility of control of charge density, they can be extremely important in spintronics applications such as spin valve and spin-based transistors. In this paper, we studied a two-dimensional dilute magnetic semiconductor consisting of a phosphorene monolayer doped with cobalt atoms in substitutional and interstitial defects. We show that these defects can be stabilized and are electrically active. Furthermore, by including holes or electrons by a potential gate, the exchange interaction and magnetic order can be engineered, and may even induce a ferromagnetic-to-antiferromagnetic phase transition in p -doped phosphorene. At a Co concentration of 2.7%, we estimate a Curie temperature of TCMF A=466 K in the mean-field approximation.

  13. Electronic bandstructure of semiconductor dilute bismide structures

    NASA Astrophysics Data System (ADS)

    Erucar, T.; Nutku, F.; Donmez, O.; Erol, A.

    2017-02-01

    In this work electronic band structure of dilute bismide GaAs/GaAs1-xBix quantum well structures with 1.8% and 3.75% bismuth compositions have been investigated both experimentally and theoretically. Photoluminescence (PL) measurements reveal that effective bandgap of the samples decreases approximately 65 meV per bismuth concentration. Temperature dependence of the effective bandgap is obtained to be higher for the sample with higher bismuth concentration. Moreover, both asymmetric characteristic at the low energy tail of the PL and full width at half maximum (FWHM) of PL peak increase with increasing bismuth composition as a result of increased Bi related defects located above valence band (VB). In order to explain composition dependence of the effective bandgap quantitatively, valence band anti-crossing (VBAC) model is used. Bismuth composition and temperature dependence of effective bandgap in a quantum well structure is modeled by solving Schrödinger equation and compared with experimental PL data.

  14. Calculated electronic structures and Néel temperatures of half-metallic diluted antiferromagnetic semiconductors.

    PubMed

    Ogura, M; Takahashi, C; Akai, H

    2007-09-12

    The possibility of half-metallic diluted antiferromagnetic semiconductors of II-VI compounds is investigated on the basis of first-principles electronic structure calculation. The electronic structures of ZnS, ZnSe, ZnO, CdS and CdSe doped with two kinds of 3d transition metal ions are calculated using the Korringa-Kohn-Rostoker (KKR) method and their magnetic transition temperatures are determined using a cluster-type approximation. It is predicted that II-VI compound semiconductors doped with two kinds of magnetic ions might be good candidates for half-metallic antiferromagnets.

  15. (Ba1-xKx)(Cu2-xMnx)Se2: A copper-based bulk form diluted magnetic semiconductor with orthorhombic BaCu2S2-type structure

    NASA Astrophysics Data System (ADS)

    Guo, Shengli; Man, Huiyuan; Gong, Xin; Ding, Cui; Zhao, Yao; Chen, Bin; Guo, Yang; Wang, Hangdong; Ning, F. L.

    2016-02-01

    A new copper-based bulk form diluted magnetic semiconductor (DMS) (Ba1-xKx)(Cu2-xMnx)Se2 (x=0.075, 0.10, 0.125, and 0.15) with TC ∼18 K has been synthesized. K substitution for Ba introduces hole-type carriers, while Mn substitution for Cu provides local spins. Different from previous reported DMSs, this material crystallizes into orthorhombic BaCu2S2-type crystal structure. No ferromagnetism is observed when only doping Mn, and clear ferromagnetic transition and hysteresis loop have been observed as K and Mn are codoped into the parent compound BaCu2Se2.

  16. Hole doping and pressure effects on the II-II-V-based diluted magnetic semiconductor (B a1 -xKx ) (Zn1-yM ny ) 2A s2

    NASA Astrophysics Data System (ADS)

    Sun, F.; Zhao, G. Q.; Escanhoela, C. A.; Chen, B. J.; Kou, R. H.; Wang, Y. G.; Xiao, Y. M.; Chow, P.; Mao, H. K.; Haskel, D.; Yang, W. G.; Jin, C. Q.

    2017-03-01

    We investigate doping- and pressure-induced changes in the electronic state of Mn 3 d and As 4 p orbitals in II-II-V-based diluted magnetic semiconductor (B a1 -xKx ) (Zn1-yM ny ) 2A s2 to shed light into the mechanism of indirect exchange interactions leading to high ferromagnetic ordering temperature (T c =230 K in optimally doped samples). A suite of x-ray spectroscopy experiments (emission, absorption, and dichroism) show that the emergence and further enhancement of ferromagnetic interactions with increased hole doping into the As 4 p band is accompanied by a decrease in local 3 d spin density at Mn sites. This is a result of increasing Mn 3 d -As 4 p hybridization with hole doping, which enhances indirect exchange interactions between Mn dopants and gives rise to induced magnetic polarization in As 4 p states. On the contrary, application of pressure suppresses exchange interactions. While Mn K β emission spectra show a weak response of 3 d states to pressure, clear As 4 p band broadening (hole delocalization) is observed under pressure, ultimately leading to loss of ferromagnetism concomitant with a semiconductor to metal transition. The pressure response of As 4 p and Mn 3 d states is intimately connected with the evolution of the As-As interlayer distance and the geometry of the MnA s4 tetrahedral units, which we probed with x-ray diffraction. Our results indicate that hole doping increases the degree of covalency between the anion (As) p states and cation (Mn) d states in the MnA s4 tetrahedron, a crucial ingredient to promote indirect exchange interactions between Mn dopants and high T c ferromagnetism. The instability of ferromagnetism and semiconducting states against pressure is mainly dictated by delocalization of anion p states.

  17. On exchange interaction between shallow impurity centers in diluted semiconductors.

    NASA Astrophysics Data System (ADS)

    Krotkov, Pavel; Gor'kov, Lev

    2003-03-01

    We generalize the method developed in [1,2] to obtain asymptotically exact expressions for the exchange splitting in semiconductors of the levels of carriers localized on shallow impurities at small impurity concentrations (large inter-center separations). Our approach takes into account degeneracy inherent to shallow centers in most semiconductors. We also consider the effects of spin-orbital interaction and of an external magnetic field. [1] L.P. Gor'kov and L.P. Pitaevskii, Dokl. Akad. Nauk SSSR 151, 822 (1963) [Sov. Phys. Dokl. 8, 788 (1964)]. [2] C. Herring and M. Flicker, Phys. Rev. 134, A362 (1964)].

  18. Structural and Optical properties of Er doped ZnO diluted magnetic semiconductor nano thin films produced by sol gel method

    NASA Astrophysics Data System (ADS)

    Tasci, A. Tolga; Ozturk, Ozgur; Asikuzun, Elif; Arda, Lutfi; Celik, Sukru; Terzioglu, Cabir

    Undoped and Er doped ZnO (Zn1-xErxO) transparent semiconductor thin films were coated using sol-gel method on non-alkali glass. Erbium was doped 1%, 2%, 3%, 4% and 5% ratio. Methanol and monoethanolamine were used as solvent and stabilizer. In this study, the effect of Er doping was examined on the structural and optical properties of ZnO DMS thin films. XRD, SEM and UV-VIS-NIR spectrometer measurements were performed for the structural and optical characterization. XRD results showed that, all of Er doped ZnO thin films have a hexagonal structure. The optical transmittance of rare earth element (Er) doped ZnO thin films were increased. The Er doped ZnO thin films showed high transparency (>84) in the visible region (400-700 nm). This research has been supported by the Kastamonu University Scientific Research Projects Coordination Department under the Grant No. KUBAP-03/2013-41 and the Scientific and Technological Research Council of Turkey (TUBITAK) Project No. 114F259.

  19. Local atomic and magnetic structure of dilute magnetic semiconductor (Ba,K)(Zn,Mn)2As2

    SciTech Connect

    Frandsen, Benjamin A.; Gong, Zizhou; Terban, Maxwell W.; Banerjee, Soham; Chen, Bijuan; Jin, Changqing; Feygenson, Mikhail; Uemura, Yasutomo J.; Billinge, Simon J. L.

    2016-09-06

    We studied the atomic and magnetic structure of the dilute ferromagnetic semiconductor system (Ba,K)(Zn,Mn)2As2 through atomic and magnetic pair distribution function analysis of temperature-dependent x-ray and neutron total scattering data. Furthermore, we detected a change in curvature of the temperature-dependent unit cell volume of the average tetragonal crystallographic structure at a temperature coinciding with the onset of ferromagnetic order. We also observed the existence of a well-defined local orthorhombic structure on a short length scale of ≲5Å, resulting in a rather asymmetrical local environment of the Mn and As ions. Finally, the magnetic PDF revealed ferromagnetic alignment of Mn spins along the crystallographic c axis, with robust nearest-neighbor ferromagnetic correlations that exist even above the ferromagnetic ordering temperature. Finally, we discuss these results in the context of other experiments and theoretical studies on this system.

  20. Effects of hydrogen annealing and codoping (Mn, Fe, Ni, Ga, Y) of nanocrystalline Cu-doped ZnO dilute magnetic semiconductor

    NASA Astrophysics Data System (ADS)

    Bououdina, Mohamed; Aziz Dakhel, Aqeel

    2015-01-01

    Zinc oxide (ZnO) codoped with Cu and M ions (M = Mn, Fe, Ni, Ga, Y) powders were synthesised by simultaneous thermal co-decomposition of a mixture of zinc and metal complexes. The synthesised chemical formula for the prepared solid solution is Zn0.97Cu0.01M0.02O. X-ray diffraction (XRD) analysis confirms the formation of single nanocrystalline structure of the as-prepared powders, thus, both Cu and M ions were incorporated into ZnO lattice forming solid solutions. Magnetic measurements reveal that all the as-synthesised doped ZnO powders gained partial (RT-FM) properties but with different strength and BH-behaviour depends on the nature of the doping (M). Furthermore, H2 post-treatment was subsequently carried out and it was found that the observed RT-FM is enhanced. Very interestingly, in case of Ni dopant, the whole powder becomes completely ferromagnetic with coercivity (Hc), remanence (Mr) and saturation magnetisation (Ms) of 133.6 Oe, 1.086 memu/g and 4.959 memu/g, respectively. The value of Ms was increased by ~ 95% in comparison with as-prepared.

  1. Optical and transport studies of magnetic semiconductors

    NASA Astrophysics Data System (ADS)

    Shen, Shaoping

    In this thesis, various studies of magneto-transport and magneto-optical effects in III-V and II-V magnetic semiconductors are presented. The magneo-transport study involved the investigation of the anomalous Hall effect (AHE) in (Ga,Mn)As epilayers with low Mn concentration, grown in ultra-high vacuum molecular beam epitaxy (UHV MBE) chamber. Experiments were carried out in National High Magnetic Field Laboratory (NHMFL) on a series of samples with same Mn concentrations (x = 1.4%) but with various Be co-doping levels. We observed a sublinear relationship between the transverse resistivity rhoxy and the longitudinal resistivity rhoxx with a scaling factor n = 0.5, which has not been predicted theoretically. We also investigated the magneto-optical and magnetic properties of two quaternary diluted magnetic semiconductor (DMS) alloys, Cd1- x-yMnxCryTe and Cd1-x-yMnxCo yTe grown by the vertical Bridgman method, with a fixed Mn concentration x ˜ 0.37 and, respectively, with concentrations of Cr in the range 0 < y < 0.07 and Co in the range 0 < y < 0.009. The introduction of Cr and Co leads to very different behaviors, including the occurrence of ferromagnetic order in the case of Cd1-x-yMn xCryTe and several interesting optical transitions for Cd1-x-yMn xCoyTe. We discuss the possible origins of these observed behaviors. Last, we focused on DMS based nano-structures. Magnetic circular dichroism (MCD) studies have been carried out on a series of 1.4 nm thick CdSe:Mn nano-ribbons synthesized via colloidal chemical route. MCD spectra have been used for investigating the Zeeman splitting in these one-dimensional (1D) quantum confined diluted magnetic semiconductor nanostructures. In all samples, a strong MCD signal was found at about 2.9 eV due to a large Zeeman splitting of the exciton confined in the nano-ribbon. The Zeeman splitting is a result of strong sp-d exchange interaction between the electronic holes of the nano-ribbons and localized magnetic moment of Mn2

  2. Efficient photocatalytic degradation of rhodamine-B by Fe doped CuS diluted magnetic semiconductor nanoparticles under the simulated sunlight irradiation

    NASA Astrophysics Data System (ADS)

    Sreelekha, N.; Subramanyam, K.; Amaranatha Reddy, D.; Murali, G.; Rahul Varma, K.; Vijayalakshmi, R. P.

    2016-12-01

    The present work is planned for a simple, inexpensive and efficient approach for the synthesis of Cu1-xFexS (x = 0.00, 0.01, 0.03, 0.05 and 0.07) nanoparticles via simplistic chemical co-precipitation route by using ethylene diamine tetra acetic acid (EDTA) as a capping molecules. As synthesized nanoparticles were used as competent catalysts for degradation of rhodamine-B organic dye pollutant. The properties of prepared samples were analyzed with energy dispersive analysis of X-rays (EDAX), X-ray diffraction (XRD), transmission electron microscopy (TEM), UV-visible optical absorption spectroscopy, Fourier transform infrared (FTIR) spectra, Raman spectra and vibrating sample magnetometer (VSM). EDAX spectra corroborated the existence of Fe in prepared nanoparticles within close proximity to stoichiometric ratio. XRD, FTIR and Raman patterns affirmed that configuration of single phase hexagonal crystal structure as that of (P63/mmc) CuS, without impurity crystals. The average particle size estimated by TEM scrutiny is in the assortment of 5-10 nm. UV-visible optical absorption measurements showed that band gap narrowing with increasing the Fe doping concentration. VSM measurements revealed that 3% Fe doped CuS nanoparticles exhibited strong ferromagnetism at room temperature and changeover of magnetic signs from ferromagnetic to the paramagnetic nature with increasing the Fe doping concentration in CuS host lattice. Among all Fe doped CuS nanoparticles, 3% Fe inclusion CuS sample shows better photocatalytic performance in decomposition of RhB compared with the pristine CuS. Thus as synthesized Cu0·97Fe0·03S nanocatalysts are tremendously realistic compounds for photocatalytic fictionalization in the direction of organic dye degradation under visible light.

  3. Percolation quantum phase transitions in diluted magnets.

    PubMed

    Vojta, Thomas; Schmalian, Jörg

    2005-12-02

    We show that the interplay of geometric criticality and quantum fluctuations leads to a novel universality class for the percolation quantum phase transition in diluted magnets. All critical exponents involving dynamical correlations are different from the classical percolation values, but in two dimensions they can nonetheless be determined exactly. We develop a complete scaling theory of this transition, and we relate it to recent experiments in La2Cu(1-p)(Zn,Mg)(p)O4. Our results are also relevant for disordered interacting boson systems.

  4. Photoemission and magnetic circular dichroism studies of magnetic semiconductors

    NASA Astrophysics Data System (ADS)

    Fujimori, Atsushi

    2005-03-01

    Recently, a series of novel ferromagnetic semiconductors have been synthesized using MBE and related techniques and have attracted much attention because of unknown mechanisms of carrier-induced ferromagnetism and potential applications as "spin electronics" devices. Some new materials show ferromagnetism even well above room temperature. Photoemission spectroscopy has been used to study the d orbitals of the dilute transition-metal atoms, mostly Mn, and their hybridization with the host band states [1]. Soft x-ray absorption spectroscopy (XAS) and magnetic circular dichroism (MCD) at the transition-metal 2p-3d absorption edges are useful techniques to study the valence and spin states of the transition-metal atoms. Furthermore, since MCD has different sensitivities to the ferromagnetic and paramagnetic components at different temperatures and magnetic fileds, if the sample is a mixture of ferromagnetic and non-ferromagnetic transition- metal atoms, it can be used to separate the two components and to study their electronic structures. In this talk, results are presented for the prototypical diluted ferromagnetic semiconductor Ga1-xMnxAs [2] and the room-temperature ferromagnets Zn1-xCoxO and Ti1-xCoxO2.I acknowledge collaboration with Y. Ishida, J.-I. Hwang, M. Kobayashi, Y. Takeda, Y. Saitoh, J. Okamoto, T. Okane, Y. Muramatsu, K. Mamiya, T. Koide, A. Tanaka, M. Tanaka, Hayashi, S. Ohya, T. Kondo, H. Munekata, H. Saeki, H. Tabata, T. Kawai, Y. Matsumoto, H. Koinuma, T. Fukumura and M. Kawasaki. This work was supported by a Grant-in-Aid for Scientific Research in Priority Area "Semiconductor nano-spintronics" (14076209) from MEXT, Japan.1. J. Okabayashi et al., Phys. Rev. B 64, 125304 (2001).2. A. Fujimori et al., J. Electron Spectrosc. Relat. Phenom., in press.

  5. Dilute ferromagnetic semiconductors prepared by the combination of ion implantation with pulse laser melting

    NASA Astrophysics Data System (ADS)

    Zhou, Shengqiang

    2015-07-01

    Combining semiconducting and ferromagnetic properties, dilute ferromagnetic semiconductors (DFS) have been under intensive investigation for more than two decades. Mn doped III-V compound semiconductors have been regarded as the prototype of DFS from both experimental and theoretic investigations. The magnetic properties of III-V:Mn can be controlled by manipulating free carriers via electrical gating, as for controlling the electrical properties in conventional semiconductors. However, the preparation of DFS presents a big challenge due to the low solubility of Mn in semiconductors. Ion implantation followed by pulsed laser melting (II-PLM) provides an alternative to the widely used low-temperature molecular beam epitaxy (LT-MBE) approach. Both ion implantation and pulsed-laser melting occur far enough from thermodynamic equilibrium conditions. Ion implantation introduces enough dopants and the subsequent laser pulse deposit energy in the near-surface region to drive a rapid liquid-phase epitaxial growth. Here, we review the experimental study on preparation of III-V:Mn using II-PLM. We start with a brief description about the development of DFS and the physics behind II-PLM. Then we show that ferromagnetic GaMnAs and InMnAs films can be prepared by II-PLM and they show the same characteristics of LT-MBE grown samples. Going beyond LT-MBE, II-PLM is successful to bring two new members, GaMnP and InMnP, into the family of III-V:Mn DFS. Both GaMnP and InMnP films show the signature of DFS and an insulating behavior. At the end, we summarize the work done for Ge:Mn and Si:Mn using II-PLM and present suggestions for future investigations. The remarkable advantage of II-PLM approach is its versatility. In general, II-PLM can be utilized to prepare supersaturated alloys with mismatched components.

  6. Polaronic trapping in magnetic semiconductors

    NASA Astrophysics Data System (ADS)

    Raebiger, Hannes

    2012-02-01

    GaN doped with iron is an interesting candidate material for magnetic semiconductors, as p-d coupling between the localized Fe-d and extended N-p hole states is expected to facilitate long-range ferromagnetic alignment of the Fe spins [1]. This picture of extended states in GaN:Fe, however, falls apart due to a polaronic localization of the hole carriers nearby the Fe impurities. To elucidate the carrier localization in GaN:Fe and related iron doped III-V semiconductors, I present a systematic study using self-interaction corrected density-functional calculations [2]. These calculations predict three distinct scenarios. (i) Some systems do sustain extended host-like hole states, (ii) some exhibit polaronic trapping, (iii) and some exhibit carrier trapping at Fe-d orbitals. These behaviors are described in detail to give an insight as to how to distinguish them experimentally. I thank T. Fujita, C. Echeverria-Arrondo, and A. Ayuela for their collaboration.[4pt] [1] T. Dietl et al, Science, 287, 1019 (2000).[0pt] [2] S. Lany and A. Zunger, Phys. Rev. B, 80, 085202 (2009).

  7. A room-temperature magnetic semiconductor from a ferromagnetic metallic glass

    NASA Astrophysics Data System (ADS)

    Liu, Wenjian; Zhang, Hongxia; Shi, Jin-An; Wang, Zhongchang; Song, Cheng; Wang, Xiangrong; Lu, Siyuan; Zhou, Xiangjun; Gu, Lin; Louzguine-Luzgin, Dmitri V.; Chen, Mingwei; Yao, Kefu; Chen, Na

    2016-12-01

    Emerging for future spintronic/electronic applications, magnetic semiconductors have stimulated intense interest due to their promises for new functionalities and device concepts. So far, the so-called diluted magnetic semiconductors attract many attentions, yet it remains challenging to increase their Curie temperatures above room temperature, particularly those based on III-V semiconductors. In contrast to the concept of doping magnetic elements into conventional semiconductors to make diluted magnetic semiconductors, here we propose to oxidize originally ferromagnetic metals/alloys to form new species of magnetic semiconductors. We introduce oxygen into a ferromagnetic metallic glass to form a Co28.6Fe12.4Ta4.3B8.7O46 magnetic semiconductor with a Curie temperature above 600 K. The demonstration of p-n heterojunctions and electric field control of the room-temperature ferromagnetism in this material reflects its p-type semiconducting character, with a mobility of 0.1 cm2 V-1 s-1. Our findings may pave a new way to realize high Curie temperature magnetic semiconductors with unusual multifunctionalities.

  8. A room-temperature magnetic semiconductor from a ferromagnetic metallic glass

    PubMed Central

    Liu, Wenjian; Zhang, Hongxia; Shi, Jin-an; Wang, Zhongchang; Song, Cheng; Wang, Xiangrong; Lu, Siyuan; Zhou, Xiangjun; Gu, Lin; Louzguine-Luzgin, Dmitri V.; Chen, Mingwei; Yao, Kefu; Chen, Na

    2016-01-01

    Emerging for future spintronic/electronic applications, magnetic semiconductors have stimulated intense interest due to their promises for new functionalities and device concepts. So far, the so-called diluted magnetic semiconductors attract many attentions, yet it remains challenging to increase their Curie temperatures above room temperature, particularly those based on III–V semiconductors. In contrast to the concept of doping magnetic elements into conventional semiconductors to make diluted magnetic semiconductors, here we propose to oxidize originally ferromagnetic metals/alloys to form new species of magnetic semiconductors. We introduce oxygen into a ferromagnetic metallic glass to form a Co28.6Fe12.4Ta4.3B8.7O46 magnetic semiconductor with a Curie temperature above 600 K. The demonstration of p–n heterojunctions and electric field control of the room-temperature ferromagnetism in this material reflects its p-type semiconducting character, with a mobility of 0.1 cm2 V−1 s−1. Our findings may pave a new way to realize high Curie temperature magnetic semiconductors with unusual multifunctionalities. PMID:27929059

  9. Lieb-Mattis ferrimagnetism in magnetic semiconductors

    NASA Astrophysics Data System (ADS)

    Kuzian, R. O.; Richter, J.; Kuz'min, M. D.; Hayn, R.

    2016-06-01

    We show the possibility of long-range ferrimagnetic ordering with a saturation magnetization of ˜1 μB per spin for arbitrarily low concentration of magnetic impurities in semiconductors, provided that the impurities form a superstructure satisfying the conditions of the Lieb-Mattis theorem. Explicit examples of such superstructures are given for the wurtzite lattice, and the temperature of ferrimagnetic transition is estimated from a high-temperature expansion. Exact diagonalization studies show that small fragments of the structure exhibit enhanced magnetic response and isotropic superparamagnetism at low temperatures. A quantum transition in a high magnetic field is considered and similar superstructures in cubic semiconductors are discussed as well.

  10. Engineering Dilute Nitride Semiconductor Alloys for Intermediate Band Solar Cells

    NASA Astrophysics Data System (ADS)

    Luce, Alexander Vallejo

    The growth and characterization of GaAs nanowires and GaNPAs thin-films is discussed within the context of finding a material system that is suitable as an intermediate band solar cell (IBSC) absorber. The IBSC is an attractive concept proposed to exceed the Shockley-Queisser detailed balance limit for photovoltaic efficiency. These solar cells have an additional intermediate band, allowing for the absorption of below bandgap photons, thus resulting in an increase in photocurrent and higher efficiency. Suitable materials systems for the implementation of the IBSC concept, however, are presently lacking. Recent work on the highly-mismatched alloy (HMA) GaAsN has shown that the unique features of the electronic band structure demonstrate optical activity of three energy bands and have led to the realization of a proof-of-concept IBSC. GaAsN, however, is not without shortcomings. Another HMA material, GaNPAs, which offers a wide range of bandgap tunability and is better matched to the solar spectrum is proposed. This work covers the optical characterization of both GaAs nanowires and GaAsPN using traditional visible-light semiconductor characterization techniques including optical absorption spectroscopy, photo-modulated reflectance, steady-state photoluminescence, and spectral photoconductivity. Additionally, photovoltaic devices based on GaNPAs are demonstrated and assessed as potential IBSCs.

  11. Magnetization and Hysteresis of Dilute Magnetic-Oxide Nanoparticles

    NASA Astrophysics Data System (ADS)

    Skomski, Ralph; Balamurugan, B.; Sellmyer, D. J.

    2014-03-01

    Real-structure imperfections in dilute magnetic oxides tend to create small concentrations of local magnetic moments that are coupled by fairly long-range exchange interactions, mediated by p-electrons. The robustness of these interactions is caused by the strong overlap of the p orbitals, as contrasted to the much weaker interatomic exchange involving iron-series 3d electrons. The net exchange between defect moments can be positive or negative, which gives rise to spin structures with very small net moments. Similarly, the moments exhibit magnetocrystalline anisotropy, reinforced by electron hopping to and from 3d states and generally undergoing some random-anuisotropy averaging. Since the coercivity scales as 2K1/M and M is small, this creates pronounced and -- in thin films -- strongly anisotropic hysteresis loops. In finite systems with N moments, both K1 and M are reduced by a factor of order N1/2 due to random anisotropy and moment compensation, respectively, so that that typical coercivities are comparable to bulk magnets. Thermal activation readily randomizes the net moment of small oxide particles, so that the moment is easier to measure in compacted or aggregated particle ensembles. This research is supported by DOE (BES).

  12. (Magnetic properties of doped semiconductors)

    SciTech Connect

    Not Available

    1990-01-01

    Research continued on the transport behavior of doped semiconductors on both sides of the metal-insulator transition, and the approach to the transition from both the insulating and the metallic side. Work is described on magneto resistance of a series of metallic Si:B samples and CdSe. (CBS)

  13. Magnetic and Electrical Properties of Ferromagnetic Semiconductors,

    DTIC Science & Technology

    magnetism and of the mechanism of the electronic conductivity of ferromagnetic semiconductors in connection with their chemical composition and crystalline ... structure . The basic groups of oxide compounds of 4f- and 3d-transition metals with maximum spin values were selected for the studies in this work. The

  14. The criterion of magnetism in semiconductor nanoobjects

    NASA Astrophysics Data System (ADS)

    Uspenskii, Yu. A.; Tikhonov, E. V.; Matsko, N. L.

    2015-06-01

    The Stoner criterion is known as a useful tool predicting the ferromagnetic state (FM) in metals. This criterion is not applied to nanoobjects, because of their discrete electron spectrum. In our paper we consider a generalization of this criterion, which can be applied to magnetism in semiconductor nanoobjects. To derive it, we compare total energies of the FM and non-magnetic states using many-body perturbation theory. The derived criterion has compact form and may be useful for prediction of ferromagnetism in nanoobjects. To check its precision, we performed first-principle calculations of several semiconductor nanoobjects in the FM and non-magnetic states and compared their results with predicted ones.

  15. DFT calculations of magnetic anisotropy energy of Ge(1-x)Mn(x)Te ferromagnetic semiconductor.

    PubMed

    Łusakowski, A; Bogusławski, P; Story, T

    2015-06-10

    Density functional theory (DFT) calculations of the energy of magnetic anisotropy for diluted ferromagnetic semiconductor Ge(1-x)Mn(x)Te were performed using OpenMX package with fully relativistic pseudopotentials. The influence of hole concentration and magnetic ion neighbourhood on magnetic anisotropy energy is presented. Analysis of microscopic mechanism of magnetic anisotropy is provided, in particular the role of spin-orbit coupling, spin polarization and spatial changes of electron density are discussed. The calculations are in accordance with the experimental observation of perpendicular magnetic anisotropy in rhombohedral Ge(1-x)Mn(x)Te (1 1 1) thin layers.

  16. DFT calculations of magnetic anisotropy energy of Ge1-xMnxTe ferromagnetic semiconductor

    NASA Astrophysics Data System (ADS)

    Łusakowski, A.; Bogusławski, P.; Story, T.

    2015-06-01

    Density functional theory (DFT) calculations of the energy of magnetic anisotropy for diluted ferromagnetic semiconductor Ge1-xMnxTe were performed using OpenMX package with fully relativistic pseudopotentials. The influence of hole concentration and magnetic ion neighbourhood on magnetic anisotropy energy is presented. Analysis of microscopic mechanism of magnetic anisotropy is provided, in particular the role of spin-orbit coupling, spin polarization and spatial changes of electron density are discussed. The calculations are in accordance with the experimental observation of perpendicular magnetic anisotropy in rhombohedral Ge1-xMnxTe (1 1 1) thin layers.

  17. Semiconductor Crystal Growth in Static and Rotating Magnetic fields

    NASA Technical Reports Server (NTRS)

    Volz, Martin

    2004-01-01

    Magnetic fields have been applied during the growth of bulk semiconductor crystals to control the convective flow behavior of the melt. A static magnetic field established Lorentz forces which tend to reduce the convective intensity in the melt. At sufficiently high magnetic field strengths, a boundary layer is established ahead of the solid-liquid interface where mass transport is dominated by diffusion. This can have a significant effect on segregation behavior and can eliminate striations in grown crystals resulting from convective instabilities. Experiments on dilute (Ge:Ga) and solid solution (Ge-Si) semiconductor systems show a transition from a completely mixed convective state to a diffusion-controlled state between 0 and 5 Tesla. In HgCdTe, radial segregation approached the diffusion limited regime and the curvature of the solid-liquid interface was reduced by a factor of 3 during growth in magnetic fields in excess of 0.5 Tesla. Convection can also be controlled during growth at reduced gravitational levels. However, the direction of the residual steady-state acceleration vector can compromise this effect if it cannot be controlled. A magnetic field in reduced gravity can suppress disturbances caused by residual transverse accelerations and by random non-steady accelerations. Indeed, a joint program between NASA and the NHMFL resulted in the construction of a prototype spaceflight magnet for crystal growth applications. An alternative to the suppression of convection by static magnetic fields and reduced gravity is the imposition of controlled steady flow generated by rotating magnetic fields (RMF)'s. The potential benefits of an RMF include homogenization of the melt temperature and concentration distribution, and control of the solid-liquid interface shape. Adjusting the strength and frequency of the applied magnetic field allows tailoring of the resultant flow field. A limitation of RMF's is that they introduce deleterious instabilities above a

  18. Instability of Homogeneous State in Magnetic Semiconductors

    NASA Astrophysics Data System (ADS)

    Sinkkonen, J.; Kuivalainen, P.; Stubb, T.

    1982-06-01

    The instability of the homogeneous state in a ferromagnetic semiconductor is studied. The electronic part of the free energy is determined using Thomas-Fermi statistical model and the magnetic part is calculated by the molecular field approximation including the RKKY-interaction. The inhomogeneity consists of a small magnetically polarized region with a high electron density surrounded by a less polarized positively charged depletion layer. The inhomogeneous state is found to be stable in a relatively broad temperature range around the Curie temperature at low and intermediate doping densities. The stability range shrinks in an applied magnetic field. At fields exceeding about 3 T or at doping densities larger than 1021 cm-3 the inhomogeneous state is no more stable.

  19. Optically pumped nuclear magnetic resonance of semiconductors.

    PubMed

    Hayes, Sophia E; Mui, Stacy; Ramaswamy, Kannan

    2008-02-07

    Optically pumped NMR (OPNMR) of direct gap and indirect gap semiconductors has been an area of active research interest, motivated by both basic science and technological perspectives. Proposals to enhance and to spatially localize nuclear polarization have stimulated interest in this area. Recent progress in OPNMR has focused on exploring the experimental parameter space in order to elucidate details of the underlying photophysics of optical pumping phenomena. The focus of this review is on recent studies of bulk samples of GaAs and InP, namely, the photon energy dependence, the magnetic field dependence, and the phase dependence of OPNMR resonances. Models for the development of nuclear polarization are discussed.

  20. First-principles calculation on dilute magnetic alloys in zinc blend crystal structure

    NASA Astrophysics Data System (ADS)

    Ullah, Hamid; Inayat, Kalsoom; Khan, S. A.; Mohammad, S.; Ali, A.; Alahmed, Z. A.; Reshak, A. H.

    2015-07-01

    Ab-initio calculations are performed to investigate the structural, electronic and magnetic properties of spin-polarized diluted magnetic alloys in zinc blende structure. The first-principles study is carried out on Mn doped III-V semiconductors. The calculated band structures, electronic properties and magnetic properties of Ga1-xMnxX (X=P, As) compounds reveal that Ga0.75Mn0.25P is half metallic turned to be metallic with increasing x to 0.5 and 0.75, whereas substitute P by As cause to maintain the half-metallicity nature in both of Ga0.75Mn0.25As and Ga0.5Mn0.5As and tune Ga0.25Mn0.75As to be metallic. Calculated total magnetic moments and the robustness of half-metallicity of Ga0.75Mn0.25P, Ga0.75Mn0.25As and Ga0.5Mn0.5As with respect to the variation in lattice parameters are also discussed. The predicted theoretical evidence shows that some Mn-doped III-V semiconductors can be effectively used in spintronic devices.

  1. Effects of a semiconductor matrix on the band anticrossing in dilute group II-VI oxides

    NASA Astrophysics Data System (ADS)

    Wełna, M.; Kudrawiec, R.; Nabetani, Y.; Tanaka, T.; Jaquez, M.; Dubon, O. D.; Yu, K. M.; Walukiewicz, W.

    2015-08-01

    The effect of a semiconductor matrix on the band anticrossing interaction is studied for four different dilute-oxide material systems: ZnSO, ZnSeO, ZnTeO, and ZnCdTeO. The choice of host material allows for independent control of the energy separation between the conduction band edge and the O energy level as well as the coupling parameter. The transition energies measured by photoreflectance and optical absorption are well explained by the band anticrossing model with the coupling parameter increasing from 1.35 eV for ZnSO to 2.8 eV for ZnTeO and showing approximately linear dependence on the electronegativity difference between O and the host anion.

  2. Magnetic Damping of Solid Solution Semiconductor Alloys

    NASA Technical Reports Server (NTRS)

    Szofran, Frank R.; Benz, K. W.; Corell, Arne; Dold, Peter; Cobb, Sharon D.; Volz, Martin P.; Motakef, Shariar

    1998-01-01

    The objective of this study is to conduct the Earth-based research sufficient to successfully propose a flight experiment (1) to experimentally test the validity of the modeling predictions applicable to the magnetic damping of convective flows in conductive melts as this applies to the bulk growth of solid solution semiconducting materials in the reduced gravitational levels available in low Earth orbit and (2) to assess the effectiveness of steady magnetic fields in reducing the fluid flows occurring in these materials during space processing. To achieve the objectives of this investigation, we are carrying out a comprehensive program in the Bridgman and floating-zone configurations using the solid solution alloy system Ge-Si. This alloy system was chosen because it has been studied extensively in environments that have not simultaneously included both low gravity and an applied magnetic field. Also, all compositions have a high electrical conductivity, and the materials parameters permit high growth rates compared to many other commonly studied alloy semiconductors. An important supporting investigation is determining the role, if any, that thermoelectromagnetic convection (TEMC) plays during growth of these materials in a magnetic field. Some compositional anomalies observed by us in magnetic grown crystals can only be explained by TEMC; this has significant implications for the deployment of a Magnetic Damping Furnace in space. This effect will be especially important in solid solutions where the growth interface is, in general, neither isothermal nor isoconcentrational. It could be important in single melting point materials, also, if faceting takes place producing a non-isothermal interface.

  3. X-ray absorption and diffraction study of II VI dilute oxide semiconductor alloy epilayers

    NASA Astrophysics Data System (ADS)

    Boscherini, F.; Malvestuto, M.; Ciatto, G.; D'Acapito, F.; Bisognin, G.; DeSalvador, D.; Berti, M.; Felici, M.; Polimeni, A.; Nabetani, Y.

    2007-11-01

    Dilute oxide semiconductor alloys obtained by adding oxygen to a II-VI binary compound are of potential applicative interest for blue-light emitters in which the oxygen content could be used to tune the band gap. Moreover, their properties can be usefully compared to the more thoroughly studied dilute nitrides in order to gain insight into the common mechanisms which give rise to their highly non-linear physical properties. Recently, it has been possible to deposit ZnSeO and ZnSeOS epilayers on GaAs(001), which exhibit a red-shift of the band gap and giant optical bowing. In order to provide a structural basis for an understanding of their physical properties, we have performed a study of a set of ZnSeO and ZnSeOS epilayers on GaAs by high resolution x-ray diffraction and x-ray absorption fine structure. We have found that the strain goes from compressive to tensile with increasing O and S concentration and that, while all epilayers are never found to be pseudomorphic, the ternary ones exhibit a low relaxed fraction if compared to the ZnSe/GaAs sample. O K-edge x-ray absorption near edge spectra and corresponding simulations within the full multiple-scattering regime show that O is substitutionally incorporated in the host lattice. Zn and Se K-edge extended x-ray absorption fine structure detect the formation of Zn-O and Zn-S bonds; the analysis of these spectra within multiple-scattering theory has allowed us to measure the local structural parameters. The value of Zn-Se bond length is found to be in agreement with estimates based on models of local distortions in strained and relaxed epilayers; an increase of the mean-square relative displacement is detected at high O and S concentration and is related to both intrinsic and extrinsic factors.

  4. Integrated semiconductor-magnetic random access memory system

    NASA Technical Reports Server (NTRS)

    Katti, Romney R. (Inventor); Blaes, Brent R. (Inventor)

    2001-01-01

    The present disclosure describes a non-volatile magnetic random access memory (RAM) system having a semiconductor control circuit and a magnetic array element. The integrated magnetic RAM system uses CMOS control circuit to read and write data magnetoresistively. The system provides a fast access, non-volatile, radiation hard, high density RAM for high speed computing.

  5. Self-bound droplets of a dilute magnetic quantum liquid

    NASA Astrophysics Data System (ADS)

    Schmitt, Matthias; Wenzel, Matthias; Böttcher, Fabian; Ferrier-Barbut, Igor; Pfau, Tilman

    2016-11-01

    Self-bound many-body systems are formed through a balance of attractive and repulsive forces and occur in many physical scenarios. Liquid droplets are an example of a self-bound system, formed by a balance of the mutual attractive and repulsive forces that derive from different components of the inter-particle potential. It has been suggested that self-bound ensembles of ultracold atoms should exist for atom number densities that are 108 times lower than in a helium droplet, which is formed from a dense quantum liquid. However, such ensembles have been elusive up to now because they require forces other than the usual zero-range contact interaction, which is either attractive or repulsive but never both. On the basis of the recent finding that an unstable bosonic dipolar gas can be stabilized by a repulsive many-body term, it was predicted that three-dimensional self-bound quantum droplets of magnetic atoms should exist. Here we report the observation of such droplets in a trap-free levitation field. We find that this dilute magnetic quantum liquid requires a minimum, critical number of atoms, below which the liquid evaporates into an expanding gas as a result of the quantum pressure of the individual constituents. Consequently, around this critical atom number we observe an interaction-driven phase transition between a gas and a self-bound liquid in the quantum degenerate regime with ultracold atoms. These droplets are the dilute counterpart of strongly correlated self-bound systems such as atomic nuclei and helium droplets.

  6. Self-bound droplets of a dilute magnetic quantum liquid.

    PubMed

    Schmitt, Matthias; Wenzel, Matthias; Böttcher, Fabian; Ferrier-Barbut, Igor; Pfau, Tilman

    2016-11-10

    Self-bound many-body systems are formed through a balance of attractive and repulsive forces and occur in many physical scenarios. Liquid droplets are an example of a self-bound system, formed by a balance of the mutual attractive and repulsive forces that derive from different components of the inter-particle potential. It has been suggested that self-bound ensembles of ultracold atoms should exist for atom number densities that are 10(8) times lower than in a helium droplet, which is formed from a dense quantum liquid. However, such ensembles have been elusive up to now because they require forces other than the usual zero-range contact interaction, which is either attractive or repulsive but never both. On the basis of the recent finding that an unstable bosonic dipolar gas can be stabilized by a repulsive many-body term, it was predicted that three-dimensional self-bound quantum droplets of magnetic atoms should exist. Here we report the observation of such droplets in a trap-free levitation field. We find that this dilute magnetic quantum liquid requires a minimum, critical number of atoms, below which the liquid evaporates into an expanding gas as a result of the quantum pressure of the individual constituents. Consequently, around this critical atom number we observe an interaction-driven phase transition between a gas and a self-bound liquid in the quantum degenerate regime with ultracold atoms. These droplets are the dilute counterpart of strongly correlated self-bound systems such as atomic nuclei and helium droplets.

  7. Dilution

    PubMed Central

    Lavie, Nilli; Torralbo, Ana

    2010-01-01

    Load theory of attention proposes that distractor processing is reduced in tasks with high perceptual load that exhaust attentional capacity within task-relevant processing. In contrast, tasks of low perceptual load leave spare capacity that spills over, resulting in the perception of task-irrelevant, potentially distracting stimuli. Tsal and Benoni (2010) find that distractor response competition effects can be reduced under conditions with a high search set size but low perceptual load (due to a singleton color target). They claim that the usual effect of search set size on distractor processing is not due to attentional load but instead attribute this to lower level visual interference. Here, we propose an account for their findings within load theory. We argue that in tasks of low perceptual load but high set size, an irrelevant distractor competes with the search nontargets for remaining capacity. Thus, distractor processing is reduced under conditions in which the search nontargets receive the spillover of capacity instead of the irrelevant distractor. We report a new experiment testing this prediction. Our new results demonstrate that, when peripheral distractor processing is reduced, it is the search nontargets nearest to the target that are perceived instead. Our findings provide new evidence for the spare capacity spillover hypothesis made by load theory and rule out accounts in terms of lower level visual interference (or mere “dilution”) for cases of reduced distractor processing under low load in displays of high set size. We also discuss additional evidence that discounts the viability of Tsal and Benoni's dilution account as an alternative to perceptual load. PMID:21133554

  8. Optimal doping control of magnetic semiconductors via subsurfactant epitaxy

    SciTech Connect

    Zeng, Changgan; Zhang, Zhenyu; van Benthem, Klaus; Chisholm, Matthew F; Weitering, Harm H

    2008-02-01

    Dilute magnetic semiconductors (DMS) with high ferromagnetic ordering temperatures (T{sub c}) have vast potential for advancing spin-based electronics or 'spintronics'. To date, achieving high-T{sub c} DMS typically required doping levels of order 5%. Such high doping levels inevitably compromise the structural homogeneity and carrier mobility of the DMS. Here, we establish 'subsurfactant epitaxy' as a novel kinetic pathway for synthesizing Mn-doped germanium with T{sub c} much higher than room temperature, at dramatically reduced doping levels. This is accomplished by optimal control of the diffusion kinetics of the dopant atoms near the growth front in two separate deposition steps. The first involves a submonolayer dose of Mn on Ge(100) at low temperature, which populates subsurface interstitial sites with Mn while suppressing lateral Mn diffusion and clustering. The second step involves epitaxial growth of Ge at elevated temperature, taking advantage of the strong floating ability of the interstitial Mn dopants towards the newly defined subsurface sites at the growth front. Most remarkably, the Mn dopants trapped inside the film are uniformly distributed at substitutional sites, and the resulting film exhibits ferromagnetism above 400 K at the nominal doping level of only 0.2%.

  9. Mechanism for strong magnetoelectric coupling in dilute magnetic ferroelectrics

    NASA Astrophysics Data System (ADS)

    Weston, L.; Cui, X. Y.; Ringer, S. P.; Stampfl, C.

    2016-11-01

    The manipulation of atomic-scale magnetization is important from both a fundamental and a practical perspective. Using first-principles density-functional-theory calculations within the hybrid functional approach, we systematically study spin-lattice coupling effects for isolated 3 d4-3 d7 transition-metal dopants in a nonmagnetic, ferroelectric PbTiO3 host material. When present at the B-site, a low-spin (or intermediate-spin) to high-spin crossover induces marked ferroelectric-like distortions in the local geometry, characterized by a shift of the dopant ion with respect to the surrounding O6 octahedral cage. The origins of this microscopic multiferroic effect are discussed in terms of the pseudo-Jahn-Teller theory for ferroelectricity. The possibility to exploit this phenomenon to achieve strong magnetoelectric coupling, including controlled spin switching, is also investigated. These results provide a further understanding of ferroelectricity and multiferroicity in perovskite oxides, and they suggest a possible pathway to manipulate single atomic spins in semiconductor solid solutions.

  10. Ultrafast Control of Magnetism in Ferromagnetic Semiconductors via Photoexcited Transient Carriers

    SciTech Connect

    Cotoros, Ingrid A.

    2008-12-01

    The field of spintronics offers perspectives for seamless integration of coupled and inter-tunable electrical and magnetic properties in a single device. For integration of the spin degree of freedom with current electronic technology, new semiconductors are needed that show electrically-tunable magnetic properties at room temperature and above. Dilute magnetic semiconductors derived from III-V compounds, like GaMnAs and InMnAs, show coupled and tunable magnetic, transport, and optical properties, due to the fact that their ferromagnetism is hole-mediated. These unconventional materials are ideal systems for manipulating the magnetic order by changing the carrier polarization, population density, and energy band distribution of the complementary subsystem of holes. This is the main theme we cover in this thesis. In particular, we develop a unique setup by use of ultraviolet pump, near-infrared probe femtosecond laser pulses, that allows for magneto-optical Kerr effect (MOKE) spectroscopy experiments. We photo-excite transient carriers in our samples, and measure the induced transient magnetization dynamics. One set of experiments performed allowed us to observe for the first time enhancement of the ferromagnetic order in GaMnAs, on an ultrafast time scale of hundreds of picoseconds. The corresponding transient increase of Curie temperature (Tc, the temperature above which a ferromagnetic material loses its permanent magnetism) of about 1 K for our experimental conditions is a very promising result for potential spintronics applications, especially since it is seconded by observation of an ultrafast ferromagnetic to paramagnetic phase transition above Tc. In a different set of experiments, we "write" the magnetization in a particular orientation in the sample plane. Using an ultrafast scheme, we alter the distribution of holes in the system and detect signatures of the particular memory state in the subsequent magnetization dynamics, with unprecedented hundreds of

  11. CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES: Orbital magnetization in semiconductors

    NASA Astrophysics Data System (ADS)

    Fang, Cheng; Wang, Zhi-Gang; Li, Shu-Shen; Zhang, Ping

    2009-12-01

    This paper theoretically investigates the orbital magnetization of electron-doped (n-type) semiconductor heterostructures and of hole-doped (p-type) bulk semiconductors, which are respectively described by a two-dimensional electron/hole Hamiltonian with both the included Rashba spin-orbit coupling and Zeeman splitting terms. It is the Zeeman splitting, rather than the Rashba spin-orbit coupling, that destroys the time-reversal symmetry of the semiconductor systems and results in nontrivial orbital magnetization. The results show that the magnitude of the orbital magnetization per hole and the Hall conductance in the p-type bulk semiconductors are about 10-2-10-1 effective Bohr magneton and 10-1-1 e2/h, respectively. However, the orbital magnetization per electron and the Hall conductance in the n-type semiconductor heterostructures are too small to be easily observed in experiment.

  12. Hybrid magnetic/semiconductor spintronic materials and devices

    NASA Astrophysics Data System (ADS)

    Xu, Y. B.; Ahmad, E.; Claydon, J. S.; Lu, Y. X.; Hassan, S. S. A.; Will, I. G.; Cantor, B.

    2006-09-01

    We report our experimental studies of different kinds of magnetic/semiconductor hybrid materials and devices highly promising for the next generation spintronics. The epitaxial Fe films on three III-V Semiconductor surfaces, In xGa 1-xAs(1 0 0), x=0, 1, 0.2, show a uniaxial magnetic anisotropy in the ultrathin region. This suggests that both interface bonding and the magnetoelastic effect control magnetic anisotropy. We demonstrate the epitaxial growth of new hybrid spintronic structures, namely, Fe 3O 4/GaAs and Fe 3O 4/MgO/GaAs, where the magnetic oxide has both high Curie temperature and high spin polarisation. Both the magnetisation loops and magneto-resistance curves of Fe 3O 4/GaAs were found to be dominated by a strong uniaxial magnetic anisotropy. We have also fabricated a novel vertical hybrid spin device, i.e. Co(15 ML)/GaAs(50 nm, n-type)/Al 0.3Ga 0.7As(200 nm, n-type)/FeNi(30 nm) and observed for the first time a change of the magneto-resistance up to 12% by direct transport measurements, which demonstrated large spin injection and the feasibility to fabricate the spin-transistors capable of operating at room temperatures by using magnetic/semiconductor hybrid materials.

  13. Ba(Zn1−2xMnxCux)2As2: A Bulk Form Diluted Ferromagnetic Semiconductor with Mn and Cu Codoping at Zn Sites

    PubMed Central

    Man, Huiyuan; Guo, Shengli; Sui, Yu; Guo, Yang; Chen, Bin; Wang, Hangdong; Ding, Cui; Ning, F.L.

    2015-01-01

    We report the synthesis and characterization of a bulk form diluted magnetic semiconductor Ba(Zn1−2xMnxCux)2As2 with the crystal structure identical to that of “122” family iron based superconductors and the antiferromagnet BaMn2As2. No ferromagnetic order occurs with (Zn, Mn) or (Zn, Cu) substitution in the parent compound BaZn2As2. Only when Zn is substituted by both Mn and Cu simultaneously, can the system undergo a ferromagnetic transition below TC ~ 70 K, followed by a magnetic glassy transition at Tf  ~ 35 K. AC susceptibility measurements for Ba(Zn0.75Mn0.125Cu0.125)2As2 reveal that Tf strongly depends on the applied frequency with and a DC magnetic field dependence of , demonstrating that a spin glass transition takes place at Tf. As large as −53% negative magnetoresistance has been observed in Ba(Zn1−2xMnxCux)2As2, enabling its possible application in memory devices. PMID:26492957

  14. Stretching magnetism with an electric field in a nitride semiconductor

    NASA Astrophysics Data System (ADS)

    Sztenkiel, D.; Foltyn, M.; Mazur, G. P.; Adhikari, R.; Kosiel, K.; Gas, K.; Zgirski, M.; Kruszka, R.; Jakiela, R.; Li, Tian; Piotrowska, A.; Bonanni, A.; Sawicki, M.; Dietl, T.

    2016-10-01

    The significant inversion symmetry breaking specific to wurtzite semiconductors, and the associated spontaneous electrical polarization, lead to outstanding features such as high density of carriers at the GaN/(Al,Ga)N interface--exploited in high-power/high-frequency electronics--and piezoelectric capabilities serving for nanodrives, sensors and energy harvesting devices. Here we show that the multifunctionality of nitride semiconductors encompasses also a magnetoelectric effect allowing to control the magnetization by an electric field. We first demonstrate that doping of GaN by Mn results in a semi-insulating material apt to sustain electric fields as high as 5 MV cm-1. Having such a material we find experimentally that the inverse piezoelectric effect controls the magnitude of the single-ion magnetic anisotropy specific to Mn3+ ions in GaN. The corresponding changes in the magnetization can be quantitatively described by a theory developed here.

  15. Stretching magnetism with an electric field in a nitride semiconductor

    PubMed Central

    Sztenkiel, D.; Foltyn, M.; Mazur, G. P.; Adhikari, R.; Kosiel, K.; Gas, K.; Zgirski, M.; Kruszka, R.; Jakiela, R.; Li, Tian; Piotrowska, A.; Bonanni, A.; Sawicki, M.; Dietl, T.

    2016-01-01

    The significant inversion symmetry breaking specific to wurtzite semiconductors, and the associated spontaneous electrical polarization, lead to outstanding features such as high density of carriers at the GaN/(Al,Ga)N interface—exploited in high-power/high-frequency electronics—and piezoelectric capabilities serving for nanodrives, sensors and energy harvesting devices. Here we show that the multifunctionality of nitride semiconductors encompasses also a magnetoelectric effect allowing to control the magnetization by an electric field. We first demonstrate that doping of GaN by Mn results in a semi-insulating material apt to sustain electric fields as high as 5 MV cm−1. Having such a material we find experimentally that the inverse piezoelectric effect controls the magnitude of the single-ion magnetic anisotropy specific to Mn3+ ions in GaN. The corresponding changes in the magnetization can be quantitatively described by a theory developed here. PMID:27782126

  16. Magnetic Damping of Solid Solution Semiconductor Alloys

    NASA Technical Reports Server (NTRS)

    Szofran, Frank R.; Benz, K. W.; Croell, Arne; Dold, Peter; Cobb, Sharon D.; Volz, Martin P.; Motakef, Shariar

    1999-01-01

    The objective of this study is to: (1) experimentally test the validity of the modeling predictions applicable to the magnetic damping of convective flows in electrically conductive melts as this applies to the bulk growth of solid solution semiconducting materials; and (2) assess the effectiveness of steady magnetic fields in reducing the fluid flows occurring in these materials during processing. To achieve the objectives of this investigation, we are carrying out a comprehensive program in the Bridgman and floating-zone configurations using the solid solution alloy system Ge-Si. This alloy system has been studied extensively in environments that have not simultaneously included both low gravity and an applied magnetic field. Also, all compositions have a high electrical conductivity, and the materials parameters permit reasonable growth rates. An important supporting investigation is determining the role, if any, that thermoelectromagnetic convection (TEMC) plays during growth of these materials in a magnetic field. TEMC has significant implications for the deployment of a Magnetic Damping Furnace in space. This effect will be especially important in solid solutions where the growth interface is, in general, neither isothermal nor isoconcentrational. It could be important in single melting point materials, also, if faceting takes place producing a non-isothermal interface. In conclusion, magnetic fields up to 5 Tesla are sufficient to eliminate time-dependent convection in silicon floating zones and possibly Bridgman growth of Ge-Si alloys. In both cases, steady convection appears to be more significant for mass transport than diffusion, even at 5 Tesla in the geometries used here. These results are corroborated in both growth configurations by calculations.

  17. Magnetic Semiconductor Quantum Wells in High Fields to 60 Tesla: Photoluminescence Linewidth Annealing at Magnetization Steps

    SciTech Connect

    Awschalom, D.D.; Crooker, S.A.; Lyo, S.K.; Rickel, D.G.; Samarth, N.

    1999-05-24

    Magnetic semiconductors offer a unique possibility for strongly tuning the intrinsic alloy disorder potential with applied magnetic field. We report the direct observation of a series of step-like reductions in the magnetic alloy disorder potential in single ZnSe/Zn(Cd,Mn)Se quantum wells between O and 60 Tesla. This disorder, measured through the linewidth of low temperature photoluminescence spectra drops abruptly at -19, 36, and 53 Tesla, in concert with observed magnetization steps. Conventional models of alloy disorder (developed for nonmagnetic semiconductors) reproduce the general shape of the data, but markedly underestimate the size of the linewidth reduction.

  18. Reentrant ferromagnetism and its stability in magnetic semiconductors

    NASA Astrophysics Data System (ADS)

    Zutic, Igor; Erwin, Steven; Petukhov, Andre

    2007-03-01

    The magnetization of a ferromagnetic material normally decays monotonically with increasing temperature. Here we demonstrate theoretically the possibility of quite different behavior: reentrant ferromagnetism in semiconductors [1]. Reentrant magnetism can arise in semiconductors because as the temperature rises, the resulting higher concentration of thermally excited carriers can enhance the exchange coupling between magnetic impurities. This opens the possibility of materials exhibiting a transition from the low-temperature paramagnetic phase, in which carriers are frozen out, to a ferromagnetic phase at higher temperature. Thus, in the absence of other ferromagnetic mechanisms there will be two critical temperatures, Tc1 < Tc2, describing para-to-ferromagnetic and ferro-to-paramagnetic transitions, respectively. Here we determine the phase diagram and the stability of reentrant ferromagnetism within a self-consistent description in which the spin-splitting in both carrier bands is included [2]. We discuss the implications of our findings for transport measurements in magnetic semiconductors, and suggest several candidate materials in which reentrant ferromagnetism might be observable. [1] I. Zuti'c, A. Petukhov, S. C. Erwin, preprint. [2] I. Zuti'c, J. Fabian, S. C. Erwin, Phys. Rev. Lett. 97, 026602 (2006).

  19. (Ca,Na)(Zn,Mn){sub 2}As{sub 2}: A new spin and charge doping decoupled diluted ferromagnetic semiconductor

    SciTech Connect

    Zhao, K.; Chen, B. J.; Deng, Z.; Zhao, G. Q.; Zhu, J. L.; Liu, Q. Q.; Wang, X. C.; Han, W.; Frandsen, B.; Liu, L.; Cheung, S.; Uemura, Y. J.; Ning, F. L.; Munsie, T. J. S.; Medina, T.; Luke, G. M.; Carlo, J. P.; Munevar, J.; Zhang, G. M.; Jin, C. Q.

    2014-10-28

    Here, we report the successful synthesis of a spin- and charge-decoupled diluted magnetic semiconductor (DMS) (Ca,Na)(Zn,Mn){sub 2}As{sub 2}, crystallizing into the hexagonal CaAl{sub 2}Si{sub 2} structure. The compound shows a ferromagnetic transition with a Curie temperature up to 33 K with 10% Na doping, which gives rise to carrier density of n{sub p} ∼ 10{sup 20 }cm{sup −3}. The new DMS is a soft magnetic material with H{sub C} < 400 Oe. The anomalous Hall effect is observed below the ferromagnetic ordering temperature. With increasing Mn doping, ferromagnetic order is accompanied by an interaction between the local spin and mobile charge, giving rise to a minimum in resistivity at low temperatures and localizing the conduction electrons. The system provides an ideal platform for studying the interaction of the local spins and conduction electrons.

  20. Serial dilution via surface energy trap-assisted magnetic droplet manipulation.

    PubMed

    Zhang, Yi; Shin, Dong Jin; Wang, Tza-Huei

    2013-12-21

    This paper demonstrates a facile method of generating precise serial dilutions in the form of droplets on an open surface platform. The method relies on the use of surface energy traps (SETs), etched areas of high surface energy on a Teflon coated glass substrate, to assist in the magnetic manipulation of droplets to meter and dispense liquid of defined volumes for the preparation of serial dilutions. The volume of the dispensed liquid can be precisely controlled by the size of the SETs, facilitating generation of concentration profiles of high linearity. We have applied this approach to the generation of serial dilutions of antibiotics for anti-microbial susceptibility testing (AST).

  1. X-ray Characterization of Oxide-based Magnetic Semiconductors

    NASA Astrophysics Data System (ADS)

    Idzerda, Yves

    2008-05-01

    Although the evidence for magnetic semiconductors (not simply semiconductors which are ferromagnetic) is compelling, there is much uncertainty in the mechanism for the polarization of the carriers, suggesting that it must be quite novel. Recent experimental evidence suggests that this mechanism is similar to the polaron percolation theory proposed by Kaminski and Das Sarma,ootnotetextKaminski and S. Das Sarma, Physical Review Letters 88, 247202 (2002). which was recently applied specifically to doped oxides by Coey et al.ootnotetextJ. M. D. Coey, M. Venkatesan, and C. B. Fitzgerald, Nature Materials 4, 173 (2005). where the ferromagnetism is driven by the percolation of polarons generated by defects or dopants. We have used X-ray absorption spectroscopy at the L-edges and K-edges for low concentrations transition metal (TM) doped magnetic oxides (including TiO2, La1-xSrxO3, HfO2, and In2O3). We have found that in most cases, the transition metal assumes a valence consistent with being at a substitutional, and not interstitial site. We have also measured the X-ray Magnetic Circular Dichroism spectra. Although these materials show strong bulk magnetization, we are unable to detect a robust dichroism feature associated with magnetic elements in the host semiconductor. In the cases where a dichroism signal was observed, it was very weak and could be ascribed to a distinct ferromagnetic phase (TM metal cluster, TM oxide particulate, etc.) separate from the host material. This fascinating absence of a dichroic signal and its significant substantiation of important features of the polaron percolation model may help to finally resolve the issue of ferromagnetism in magnetically doped oxides.

  2. Magnetic effect on hopping rate of electrons in organic semiconductors

    NASA Astrophysics Data System (ADS)

    Zhao, Junqing; Wang, Ting; Zhang, Meisheng; Zhang, Ningyu; Pang, Yantao; Li, Luyan; Ji, Yanju; Zhuang, Shidong; Mao, Jinhua; Wang, Huilin

    2013-10-01

    Considering effects of molecular vibration (ω0), hyperfine interaction (J), spin energy split, spin flip, and spin entanglement (η) of electron with nucleus on the hopping rate of electrons in organic semiconductors, we establish a model to calculate organic magnetoresistance (OMAR) within magnetic field B of 1 T. The results show that the effect of spin energy split is minimal, ω0 influences the gradient of OMAR to B in high field, J influences the OMAR in low field, the spin flip shows impact mainly in low field, η affects OMAR throughout the considered magnetic field and turns the high-field OMAR from positive to negative value.

  3. Semiconductor Circuit Diagnostics By Magnetic Field Imaging

    NASA Astrophysics Data System (ADS)

    Venkatesan, T.

    2011-03-01

    At the forefront of IC technology development are 3D circuit technologies such as system-in-package (SiP), wafer-level-packaging (WLP), through-silicon-vias (TSV), stacked die approaches, flex packages, etc. They integrate multiple devices, many times stacking them in layers with complex, intricate and very long interconnections in significantly reduced area, in addition to an ever-increasing number of opaque layers.~ We could very well say that the near future looks like the perfect nightmare for the Failure Analysis (FA) engineer with localization of defects becoming a major challenge. Magnetic field imaging (MFI) allows the fields generated by the circuit currents to go through various packaging layers and be imaged. I will describe in this talk Magma, a scanning magnetic field imaging system based on a high temperature superconducting SQUID device based on YBa2Cu3O7- δ . The HTS SQUIDs used have a noise level of ~ 20 pT/ √ (Hz) and for typical scanning conditions, a field sensitivity of about 0.7 nT. While current shorts are imaged with spatial resolution, up to 3 micron (with peak localization) resistive opens can also be imaged and currently different strategies are being adapted for imaging opens with large working distances of 50-100s of microns. Higher spatial resolution (~ 250 nm) is obtained by the use of magneto-resistive devices as sensors though the working distance requirement is sever

  4. Magnetically engineered semiconductor quantum dots as multimodal imaging probes.

    PubMed

    Jing, Lihong; Ding, Ke; Kershaw, Stephen V; Kempson, Ivan M; Rogach, Andrey L; Gao, Mingyuan

    2014-10-08

    Light-emitting semiconductor quantum dots (QDs) combined with magnetic resonance imaging contrast agents within a single nanoparticle platform are considered to perform as multimodal imaging probes in biomedical research and related clinical applications. The principles of their rational design are outlined and contemporary synthetic strategies are reviewed (heterocrystalline growth; co-encapsulation or assembly of preformed QDs and magnetic nanoparticles; conjugation of magnetic chelates onto QDs; and doping of QDs with transition metal ions), identifying the strengths and weaknesses of different approaches. Some of the opportunities and benefits that arise through in vivo imaging using these dual-mode probes are highlighted where tumor location and delineation is demonstrated in both MRI and fluorescence modality. Work on the toxicological assessments of QD/magnetic nanoparticles is also reviewed, along with progress in reducing their toxicological side effects for eventual clinical use. The review concludes with an outlook for future biomedical imaging and the identification of key challenges in reaching clinical applications.

  5. Flexible magnetic filaments under the influence of external magnetic fields in the limit of infinite dilution.

    PubMed

    Cerdà, Joan J; Sánchez, Pedro A; Lüsebrink, Daniel; Kantorovich, Sofia; Sintes, Tomàs

    2016-05-14

    In the present work we use Langevin dynamics computer simulations to understand how the presence of a constant external magnetic field modifies the conformational phase diagram of magnetic filaments in the limit of infinite dilution. We have considered the filaments immersed in either a good (non-sticky filaments) or a poor (Stockmayer polymers) solvent. It has been found that in the presence of an applied field, filaments turn out to be much more susceptible to parameters such as temperature and solvent conditions. Filaments owe this increased susceptibility to the fact that the external magnetic field tends to level the free energy landscape as compared to the zero-field case. The field induces equalization in the free energy of competing conformational states that were separated by large energy differences in the zero-field limit. In this new scenario multistability arises, and manifests itself in the existence of broad regions in the phase diagram where two or more equilibrium configurations coexist. The existence of multistability greatly enhances the possibility of tuning the properties of the filament.

  6. Magnetic instability in a dilute circular rarefaction wave

    SciTech Connect

    Dieckmann, M. E.; Sarri, G.; Borghesi, M.

    2012-12-15

    The growth of magnetic fields in the density gradient of a rarefaction wave has been observed in simulations and in laboratory experiments. The thermal anisotropy of the electrons, which gives rise to the magnetic instability, is maintained by the ambipolar electric field. This simple mechanism could be important for the magnetic field amplification in astrophysical jets or in the interstellar medium ahead of supernova remnant shocks. The acceleration of protons and the generation of a magnetic field by the rarefaction wave, which is fed by an expanding circular plasma cloud, is examined here in form of a 2D particle-in-cell simulation. The core of the plasma cloud is modeled by immobile charges, and the mobile protons form a small ring close to the cloud's surface. The number density of mobile protons is thus less than that of the electrons. The protons of the rarefaction wave are accelerated to 1/10 of the electron thermal speed, and the acceleration results in a thermal anisotropy of the electron distribution in the entire plasma cloud. The instability in the rarefaction wave is outrun by a TM wave, which grows in the dense core distribution, and its magnetic field expands into the rarefaction wave. This expansion drives a secondary TE wave.

  7. Site dilution in SrRuO3: effects on structural and magnetic properties

    NASA Astrophysics Data System (ADS)

    Gupta, Renu; Pramanik, A. K.

    2017-03-01

    We have investigated the effect of site dilution with substitution of nonmagnetic element in SrRu1‑x Ti x O3 (x  ⩽  0.7). The nature of ferromagnetic state in SrRuO3 is believed to be of itinerant type with transition temperature {{T}\\text{c}}∼ 162 K. Crystallographically, SrRuO3 has a distorted orthorhombic structure. Substitution of \\text{T}{{\\text{i}}+4} (3d 0) for Ru+4 (4d 4), however, does not introduce significant structural modification due to their matching ionic radii. This substitution, on the other hand, is expected to tune the electronic correlation effect and the d electron density in the system. With Ti substitution, we find that magnetic moment and Curie temperature decreases but T c remains unchanged which has been attributed to opposite tuning of electron correlation effect and density of states within the framework of itinerant ferromagnetism. The estimated critical exponent (β) related to magnetization implies a mean-field type of magnetic nature in SrRuO3. The value of β further increases with x which is understood from the dilution effect of magnetic lattice. The system evolves to exhibit Griffiths phase like behavior above T c which is usually realized in diluted ferromagnet following local moment model of magnetism. Our detail analysis of magnetization data indicates that magnetic state in SrRuO3 has contribution from both itinerant and local moment model of magnetism.

  8. Analytical study of acoustically perturbed Brillouin active magnetized semiconductor plasma

    SciTech Connect

    Shukla, Arun; Jat, K. L.

    2015-07-31

    An analytical study of acoustically perturbed Brillouin active magnetized semiconductor plasma has been reported. In the present analytical investigation, the lattice displacement, acousto-optical polarization, susceptibility, acousto-optical gain constant arising due to the induced nonlinear current density and acousto-optical process are deduced in an acoustically perturbed Brillouin active magnetized semiconductor plasma using the hydrodynamical model of plasma and coupled mode scheme. The influence of wave number and magnetic field has been explored. The analysis has been applied to centrosymmetric crystal. Numerical estimates are made for n-type InSb crystal duly irradiated by a frequency doubled 10.6 µm CO{sub 2} laser. It is found that lattice displacement, susceptibility and acousto-optical gain increase linearly with incident wave number and applied dc magnetic field, while decrease with scattering angle. The gain also increases with electric amplitude of incident laser beam. Results are found to be well in agreement with available literature.

  9. Static Magnetic Fields in Semiconductor Floating-Zone Growth

    NASA Technical Reports Server (NTRS)

    Croll, Arne; Benz, K. W.

    1999-01-01

    Heat and mass transfer in semiconductor float-zone processing are strongly influenced by convective flows in the zone, originating from sources such as buoyancy convection, thermocapillary (Marangoni) convection, differential rotation, or radio frequency heating. Because semiconductor melts are conducting, flows can be damped by the use of static magnetic fields to influence the interface shape and the segregation of dopants and impurities. An important objective is often the suppression of time-dependent flows and the ensuing dopant striations. In RF-heated Si-FZ - crystals, fields up to O.STesla show some flattening of the interface curvature and a reduction of striation amplitudes. In radiation-heated (small-scale) SI-FZ crystals, fields of 0.2 - 0.5 Tesla already suppress the majority of the dopant striations. The uniformity of the radial segregation is often compromised by using a magnetic field, due to the directional nature of the damping. Transverse fields lead to an asymmetric interface shape and thus require crystal rotation (resulting in rotational dopant striations) to achieve a radially symmetric interface, whereas axial fields introduce a coring effect. A complete suppression of dopant striations and a reduction of the coring to insignificant values, combined with a shift of the axial segregation profile towards a more diffusion-limited case, are possible with axial static fields in excess of 1 Tesla. Strong static magnetic fields, however, can also lead to the appearance of thermoelectromagnetic convection, caused by the interaction of thermoelectric currents with the magnetic field.

  10. Unusual electronic transport and magnetism in titanium oxide based semiconductors and metals

    NASA Astrophysics Data System (ADS)

    Zhang, Shixiong

    The main objective of this thesis was to explore the structural, electrical, magnetic and optical properties of titanium based novel oxide thin films, such as transparent conducting oxides (TCOs) and diluted magnetic semiconductors (DMSs), so as to be able to realize optoelectronics and spintronics applications. I demonstrated that niobium doped titanium dioxide (TiO2) in its epitaxial anatase phase grown at certain condition is an intrinsic transparent conducting oxide, with both its conductivity and transparency comparable to that of the commercial transparent electrode In-Sn-O being widely used in current optoelectronic devices. I investigated the growth parameter dependence of structure and conductivity of this material. It was found that the growth temperature is a crucial parameter for the structural quality as well as the electron mobility, while the oxygen partial pressure is essential for the conduction electron concentration. The excellent conductivity of niobium doped TiO2 should be attributed to the extremely high solubility of niobium in the TiO2 matrix as well as a very shallow donor level created in the TiO2 band gap. I investigated several important oxide based DMS systems, such as niobium and cobalt dual doped TiO2, transition metal (TM) element doped SrTiO3 etc. I found that niobium dual doping is an effective way to introduce carriers into the classical Co: TiO2 system, which provides the feasibility of studying the RKKY interaction in this system by chemical doping. Our detailed characterization of TM doped SrTiO3 questioned the intrinsic nature of the ferromagnetism observed by other groups. By a systematic study of Hall effect on superparamagnetic Co-(La,Sr)TiO 3 thin films, I was able to demonstrate that the magnitude of the anomalous Hall effect is a way to distinguish between intrinsic and extrinsic DMS. A Kondo effect was observed in niobium doped TiO2 grown at certain condition. The origin of magnetic moments in this system was suggested

  11. Contribution to the Theory of Magnetoelectric Effect in Magnetic Semiconductors

    NASA Astrophysics Data System (ADS)

    Kuivalainen, P.; Sinkkonen, J.; Stubb, T.

    1980-01-01

    A generation of a d.c. electric field at ferromagnetic resonance or the magnetoelectric effect in magnetic semiconductors is studied theoretically in the whole magnon wave vector space. The magnetoelectric effect in the classical regime kl < 1 and contributions of different electron-magnon interactions to the magnon drag effect in the quantum regime kl > 1 are calculated. All the calculated static electric fields are compared with experimental results. At low-microwave power levels the non-linear electrodynamic interaction due to a mixing of the oscillating magnetization (k = 0) and the induced electric field seems to dominate the magnetoelectric effect. In some cases the classical drag effect may also be significant. At sufficiently high power levels the quantum mechanical magnon drag can make the largest contribution. It is shown that in the magnon drag effect the induced static electric field is proportional to the damping coefficient of magnons.

  12. Bipolar magnetic semiconductors: a new class of spintronics materials.

    PubMed

    Li, Xingxing; Wu, Xiaojun; Li, Zhenyu; Yang, Jinlong; Hou, J G

    2012-09-21

    Electrical control of spin polarization is very desirable in spintronics, since electric fields can be easily applied locally, in contrast to magnetic fields. Here, we propose a new concept of bipolar magnetic semiconductors (BMS) in which completely spin-polarized currents with reversible spin polarization can be created and controlled simply by applying a gate voltage. This is a result of the unique electronic structure of BMS, where the valence and conduction bands possess opposite spin polarization when approaching the Fermi level. BMS is thus expected to have potential for various applications. Our band structure and spin-polarized electronic transport calculations on semi-hydrogenated single-walled carbon nanotubes confirm the existence of BMS materials and demonstrate the electrical control of spin-polarization in them.

  13. Correlation of nanoscale structure with electronic and magnetic properties in semiconductor materials

    NASA Astrophysics Data System (ADS)

    He, Li

    The goal of this research is to correlate individual nanostructures with their electronic and magnetic properties. Three classes of semiconductor materials and nanostructures were investigated: nanowires, dilute magnetic semiconductors, and quantum dots. First, we fabricated electrical contact to free-standing nanowires using focused ion beam (FIB)-induced deposition and achieved ohmic contact between GaP nanowires and FIB-deposited Pt. Ion irradiation was found to change the nanowire resistance, presumably through the generation of electrical active defects. Based on the finding that ion beam induces deposition outside the direct impact area, a new fabrication method for nanowire core-shell structures was developed by creating an annular direct deposition pattern around the nanowire. We also developed a new nanowire transmission electron microscopy (TEM) sample preparation method that enabled the free-standing nanowires to be individually studied in the TEM. Distribution of Pt and Si elements in the deposited layers was confirmed by x-ray energy dispersive spectroscopy and electron energy filtered imaging (elemental mapping). The indirect deposition mechanism is attributed to the interaction of secondary electrons generated from the primary ion impact area with the deposition precursor absorbed at the nanowire surface. The calculated secondary electron flux distribution matched well with the variation of deposition thickness along the nanowire length and with the pattern radius. The second part of this work employed Mn implantation in Ge with subsequent rapid thermal annealing or TEM in-situ annealing to study the correlation between structure and magnetic properties in Ge:Mn magnetic semiconductor materials. Implantation at 75°C with dual Mn doses (2.4x10 15/cm2 at 170 keV, followed by 5.6x10 15/cm2 at 60 keV) produced an amorphous Ge film containing Mn-rich clusters. Its magnetic properties indicated dispersion of ferromagnetic regions in a non-magnetic matrix

  14. Dynamics of Coulomb correlations in semiconductors in high magnetic fields

    SciTech Connect

    Fromer, Neil Alan

    2002-01-01

    Current theories have been successful in explaining many nonlinear optical experiments in undoped semiconductors. However, these theories require a ground state which is assumed to be uncorrelated. Strongly correlated systems of current interest, such as a two dimensional electron gas in a high magnetic field, cannot be explained in this manner because the correlations in the ground state and the low energy collective excitations cause a breakdown of the conventional techniques. We perform ultrafast time-resolved four-wave mixing on $n$-modulation doped quantum wells, which contain a quasi-two dimensional electron gas, in a large magnetic field, when only a single Landau level is excited and also when two levels are excited together. We find evidence for memory effects and as strong coupling between the Landau levels induced by the electron gas. We compare our results with simulations based on a new microscopic approach capable of treating the collective effects and correlations of the doped electrons, and find a good qualitative agreement. By looking at the individual contributions to the model, we determine that the unusual correlation effects seen in the experiments are caused by the scattering of photo-excited electron-hole pairs with the electron gas, leading to new excited states which are not present in undoped semiconductors, and also by exciton-exciton interactions mediated by the long-lived collective excitations of the electron gas, inter-Landau level magnetoplasmons.

  15. Magnetic Counterpart of Persistent Photoconductivity in Narrow-Gap Semiconductors

    NASA Astrophysics Data System (ADS)

    Vasil'ev, Alexander; Voloshok, Tatyana; Warchulska, Jolanta; Kageyama, Hiroshi

    2001-08-01

    At low temperatures, some ionic, covalent and mixed bonding compounds, as well as semiconducting heterostructures and quantum wells exhibit persistent photoconductivity. This term is used to describe the striking phenomenon in which the conductivity of these compounds and/or structures is observed to be greatly enhanced by visible or infrared illumination and the low resistance state is maintained for a long time after switching off the illumination. To describe this effect in variously doped ionic-covalent semiconductors, models of repulsive barriers for both electron emission and capture were introduced based primarily on the assumption of dopants displacement in the host's crystal lattice. Here we report on the magnetic counterpart of this phenomenon, which however does not exactly meet the expectations based on transport measurements. It was found that the magnetic response of AIVBVI narrow-gap semiconductors doped with CIII impurities possesses features of both relaxation phenomena and light-induced phase transition. Exposure of PbTe:Ga, PbTe:In and Pb0.75Sn0.25Te:In single crystals to white-light illumination at low temperatures resulted initially in an increase of the diamagnetic response and then in the appearance of a sharp paramagnetic peak upon heating.

  16. Magnetic Field Suppression of Flow in Semiconductor Melt

    NASA Technical Reports Server (NTRS)

    Fedoseyev, A. I.; Kansa, E. J.; Marin, C.; Volz, M. P.; Ostrogorsky, A. G.

    2000-01-01

    One of the most promising approaches for the reduction of convection during the crystal growth of conductive melts (semiconductor crystals) is the application of magnetic fields. Current technology allows the experimentation with very intense static fields (up to 80 KGauss) for which nearly convection free results are expected from simple scaling analysis in stabilized systems (vertical Bridgman method with axial magnetic field). However, controversial experimental results were obtained. The computational methods are, therefore, a fundamental tool in the understanding of the phenomena accounting during the solidification of semiconductor materials. Moreover, effects like the bending of the isomagnetic lines, different aspect ratios and misalignments between the direction of the gravity and magnetic field vectors can not be analyzed with analytical methods. The earliest numerical results showed controversial conclusions and are not able to explain the experimental results. Although the generated flows are extremely low, the computational task is a complicated because of the thin boundary layers. That is one of the reasons for the discrepancy in the results that numerical studies reported. Modeling of these magnetically damped crystal growth experiments requires advanced numerical methods. We used, for comparison, three different approaches to obtain the solution of the problem of thermal convection flows: (1) Spectral method in spectral superelement implementation, (2) Finite element method with regularization for boundary layers, (3) Multiquadric method, a novel method with global radial basis functions, that is proven to have exponential convergence. The results obtained by these three methods are presented for a wide region of Rayleigh and Hartman numbers. Comparison and discussion of accuracy, efficiency, reliability and agreement with experimental results will be presented as well.

  17. Dephasing by extremely dilute magnetic impurities revealed by Aharonov-Bohm oscillations.

    PubMed

    Pierre, F; Birge, Norman O

    2002-11-11

    We have probed the magnetic field dependence of the electron phase coherence time tau(phi) by measuring the Aharonov-Bohm conductance oscillations of mesoscopic Cu rings. Whereas tau(phi) determined from the low-field magnetoresistance saturates below 1 K, the amplitude of Aharonov-Bohm h/e oscillations increases strongly on a magnetic field scale proportional to the temperature. This provides strong evidence that a likely explanation for the frequently observed saturation of tau(phi) at low temperature in weakly disordered metallic thin films is the presence of extremely dilute magnetic impurities.

  18. Random site dilution properties of frustrated magnets on a hierarchical lattice.

    PubMed

    Fortin, Jean-Yves

    2013-07-24

    We present a method to analyze the magnetic properties of frustrated Ising spin models on specific hierarchical lattices with random dilution. Disorder is induced by dilution and geometrical frustration rather than randomness in the internal couplings of the original Hamiltonian. The two-dimensional model presented here possesses a macroscopic entropy at zero temperature in the large size limit, very close to the Pauling estimate for spin-ice on the pyrochlore lattice, and a crossover towards a paramagnetic phase. The disorder due to dilution is taken into account by considering a replicated version of the recursion equations between partition functions at different lattice sizes. An analysis to first order in replica number allows a systematic reorganization of the disorder configurations, leading to a recurrence scheme. This method is numerically implemented to evaluate thermodynamical quantities such as specific heat and susceptibility in an external field.

  19. Magnetite and magnetite/silver core/shell nanoparticles with diluted magnet-like behavior

    SciTech Connect

    Garza-Navarro, Marco; Gonzalez, Virgilio; Ortiz, Ubaldo; De la Rosa, Elder

    2010-01-15

    In the present work is reported the use of the biopolymer chitosan as template for the preparation of magnetite and magnetite/silver core/shell nanoparticles systems, following a two step procedure of magnetite nanoparticles in situ precipitation and subsequent silver ions reduction. The crystalline and morphological characteristics of both magnetite and magnetite/silver core/shell nanoparticles systems were analyzed by high resolution transmission electron microscopy (HRTEM) and nanobeam diffraction patterns (NBD). The results of these studies corroborate the core/shell morphology and the crystalline structure of the magnetite core and the silver shell. Moreover, magnetization temperature dependent, M(T), measurements show an unusual diluted magnetic behavior attributed to the dilution of the magnetic ordering in the magnetite and magnetite/silver core/shell nanoparticles systems. - Graphical abstract: Biopolymer chitosan was used as stabilization media to synthesize both magnetite and magnetite/silver core/shell nanoparticles. Results of HRTEM and NBD patterns confirm core/shell morphology of the obtained nanoparticles. It was found that the composites show diluted magnet-like behavior.

  20. Recent progress in magnetic iron oxide-semiconductor composite nanomaterials as promising photocatalysts

    NASA Astrophysics Data System (ADS)

    Wu, Wei; Changzhong Jiang, Affc; Roy, Vellaisamy A. L.

    2014-11-01

    Photocatalytic degradation of toxic organic pollutants is a challenging tasks in ecological and environmental protection. Recent research shows that the magnetic iron oxide-semiconductor composite photocatalytic system can effectively break through the bottleneck of single-component semiconductor oxides with low activity under visible light and the challenging recycling of the photocatalyst from the final products. With high reactivity in visible light, magnetic iron oxide-semiconductors can be exploited as an important magnetic recovery photocatalyst (MRP) with a bright future. On this regard, various composite structures, the charge-transfer mechanism and outstanding properties of magnetic iron oxide-semiconductor composite nanomaterials are sketched. The latest synthesis methods and recent progress in the photocatalytic applications of magnetic iron oxide-semiconductor composite nanomaterials are reviewed. The problems and challenges still need to be resolved and development strategies are discussed.

  1. Optical spectroscopy of novel semiconductors in high magnetic fields

    NASA Astrophysics Data System (ADS)

    Ludwig, Jonathan

    Understanding new quantum phenomena and properties of new materials is the foundation of condensed matter physics. One can mention celebrated examples of integer and fractional quantum Hall effect, Aharonov-Bohm quantum interference effects, inventions of heterostructures and superlattices, and a recent discover of Dirac-like quasiparticles in atomically thin 2D crystals. Here we employ optical spectroscopy combined with large magnetic field and low temperatures to probe the electronic structure of several novel semiconductor materials. The discovery of graphene has opened the door to the study of other 2D materials. Here we focus on a new family of semiconducting layered 2D materials known as transition metal dichalcogenides (TMDs), which have recently emerged as a new class of direct bandgap 2D semiconductors with two degenerate, but non-equality valleys at the +K and -K points in the Brillouin zone. Due to the broken inversion symmetry in monolayer TMDs, this valley degree of freedom can be selectively addressed by optical helicity, opening the possibility for valleytronic and optoelectronic applications. By performing valley selective photoluminescence measurements on TMDs we demonstrate the lifting of the valley degeneracy and valley polarization in an applied perpendicular magnetic field. One of the most remarkable properties of graphene is its linear dispersion. Once relegated only to the realm of theoretical exploration, the past ten years has seen an explosion in the realization of new Dirac-like materials in condensed matter systems. One of the most important of these new Dirac-like materials is HgTe quantum wells (QWs). Here, we report on Landau level spectroscopy studies of a series of HgTe QWs grown near or at the critical well thickness, where the band gap ?vanishes. We observe a square root B dependence for the energy of the dominant cyclotron resonance (CR) transition over the broad range of magnetic fields, characteristic of Dirac fermions. While

  2. Dilution-induced slow magnetic relaxation and anomalous hysteresis in trigonal prismatic dysprosium(III) and uranium(III) complexes.

    PubMed

    Meihaus, Katie R; Rinehart, Jeffrey D; Long, Jeffrey R

    2011-09-05

    Magnetically dilute samples of complexes Dy(H(2)BPz(Me2)(2))(3) (1) and U(H(2)BPz(2))(3) (3) were prepared through cocrystallization with diamagnetic Y(H(2)BPz(Me2)(2))(3) (2) and Y(H(2)BPz(2))(3). Alternating current (ac) susceptibility measurements performed on these samples reveal magnetic relaxation behavior drastically different from their concentrated counterparts. For concentrated 1, slow magnetic relaxation is not observed under zero or applied dc fields of several hundred Oersteds. However, a 1:65 (Dy:Y) molar dilution results in a nonzero out-of-phase component to the magnetic susceptibility under zero applied dc field, characteristic of a single-molecule magnet. The highest dilution of 3 (1:90, U:Y) yields a relaxation barrier U(eff) = 16 cm(-1), double that of the concentrated sample. These combined results highlight the impact of intermolecular interactions in mononuclear single-molecule magnets possessing a highly anisotropic metal center. Finally, dilution elucidates the previously observed secondary relaxation process for concentrated 3. This process is slowed down drastically upon a 1:1 molar dilution, leading to butterfly magnetic hysteresis at temperatures as high as 3 K. The disappearance of this process for higher dilutions reveals it to be relaxation dictated by short-range intermolecular interactions, and it stands as the first direct example of an intermolecular relaxation process competing with single-molecule-based slow magnetic relaxation.

  3. Transverse gradient diffusion in a polydisperse dilute suspension of magnetic spheres during sedimentation.

    PubMed

    Cunha, F R; Couto, H L G

    2008-05-21

    In this work we investigate the pair interaction of magnetic particles in a dilute polydisperse sedimenting suspension. The suspension is composed of magnetic spherical forms of different radii and densities immersed in a Newtonian fluid, settling due to the gravity. When in close contact, the particles may exert on each other a magnetic force due to a permanent magnetization. We restrict our attention to dispersions of micromagnetic composite with negligible Brownian motion. The calculations of the relative particle trajectories are based on direct computations of the hydrodynamic interactions among rigid spheres in the regime of low particle Reynolds number. Depending on the relative importance of the interparticle forces and gravity, the collisions may result in aggregation or simply in a breaking of the particle relative trajectory time reversibility. After summing over all possible encounters, the transverse self-diffusion and down-gradient diffusion coefficients that describe the cross-flow migration of the particles are calculated. Our calculation shows first evidence and the significance of the diffusion process arising from magnetic interactions in dilute non-Brownian suspensions.

  4. Structural Electronic and Magnetic Properties of Semiconductor Interfaces

    NASA Astrophysics Data System (ADS)

    Continenza, Alessandra

    1990-01-01

    This work is focussed on the structural, electronic and magnetic properties of semiconductor interfaces. The issues and the interest involved in these particular systems are various and have engaged both the scientific and the technological community for more than three decades. The technological interest toward semiconductors is obviously related to device applications while the scientific interest is mainly focussed on the understanding of some characteristic properties, such as potential barriers, carrier properties and band gaps, and how these can be modified by changing different external factors, such as epitaxial growth, strain effects, junctions and doping. A complete knowledge and understanding of these complex issues is, in fact, the basic requirement necessary in order to achieve the ability to "tune" basic properties "at will" and designing the "ad hoc" material for each different device application. We have performed a study of the magnetic, structural and electronic properties of a few particular examples of semiconductor interfaces and heterojunctions namely, rm Fe_{n}/(ZnSe)_ {m}, rm(InAs)_{n }/(InP)_{n} and rm( alpha-Sn)_{n}/(CdTe)_{n }, using the all-electron full-potential linearized augmented plane wave (FLAPW) method. Together with a study of the interface properties, we present results of calculations performed on all the pure constituents, in order to provide comparisons and to better understand how the bulk properties are modified by the interface. In particular, we have analyzed how the properties of these structures can be tailored by changing quantities such as the superlattice periodicity, the epitaxial strain and the interface morphology. We found that the relevance of these factors changes depending on the particular material under study and that it is possible, indeed, to model the characteristics electronic and transport properties of each structure by properly tuning the growth conditions. Our results are in very good agreement with

  5. Engineering Gilbert damping by dilute Gd doping in soft magnetic Fe thin films

    SciTech Connect

    Zhang, W. Jiang, S.; Sun, L.; Wang, Y. K.; Zhai, Y.; Wong, P. K. J.; Wang, K.; Jong, M. P. de; Wiel, W. G. van der; Laan, G. van der

    2014-05-07

    By analyzing the ferromagnetic resonance linewidth, we show that the Gilbert damping constant in soft magnetic Fe thin films can be enhanced by ∼6 times with Gd doping of up to 20%. At the same time, the magnetic easy axis remains in the film plane while the coercivity is strongly reduced after Gd inclusion. X-ray magnetic circular dichroism measurements reveal a strong increase in the orbital-to-spin moment ratio of Fe with increasing Gd concentration, in full agreement with the increase in the Gilbert damping obtained for these thin films. Combined with x-ray diffraction and vibrating sample magnetometry, the results demonstrate that the FeGd thin films with dilute Gd doping of up to 20% are promising candidates for spin-transfer-torque applications in soft magnetic devices, in which an enhanced damping is required.

  6. Magnetic properties of Zn-substituted Co-Ge-Fe-O ferrites near the dilution limit

    NASA Astrophysics Data System (ADS)

    Nogués, J.; Puig, T.; Jotania, R. B.; Upadhyay, R. V.; Kulkarni, R. G.; Rao, K. V.

    1991-09-01

    The magnetic properties of Co-doped spinel system Co 1.4- xZn xGe 0.4Fe 1.2O 4 ( x = 0.4, 0.5, 0.6) have been investigated through Mössbauer spectroscopy, ac susceptibility and dc-magnetization measurements. In these alloys the A-sublattice has been diluted to below the percolation threshold and hence ferrimagnetic long range order cannot be retained. The observation of the (i) 57Fe Mössbauer data, (ii) broad peaks in the real component of the ac-susceptibility χ( T), (iii) similar temperature dependencies for χ' and χ″ and (iv) irreversibility of magnetization during field cooling leads to a picture of local spin canting structure in this system. At high magnetic fields these systems behave as highly anisotropic ferrimagnets.

  7. Tunable exchange bias in dilute magnetic alloys – chiral spin glasses

    PubMed Central

    Hudl, Matthias; Mathieu, Roland; Nordblad, Per

    2016-01-01

    A unidirectional anisotropy appears in field cooled samples of dilute magnetic alloys at temperatures well below the cusp temperature of the zero field cooled magnetization curve. Magnetization measurements on a Cu(13.5 at% Mn) sample show that this anisotropy is essentially temperature independent and acts on a temperature dependent excess magnetization, ΔM. The anisotropy can be partially or fully transferred from being locked to the direction of the cooling field at lower fields to becoming locked to the direction of ΔM at larger fields, thus instead appearing as a uniaxial anisotropy. This introduces a deceiving division of the anisotropy into a superposition of a unidirectional and a uniaxial part. This two faced nature of the anisotropy has been empirically scrutinized and concluded to originate from one and the same exchange mechanism: the Dzyaloshinsky-Moriya interaction. PMID:26817418

  8. A comparison study of Co and Cu doped MgO diluted magnetic thin films

    NASA Astrophysics Data System (ADS)

    Sarıtaş, S.; ćakıcı, T.; Muǧlu, G. Merhan; Kundakcı, M.; Yıldırım, M.

    2017-02-01

    Transition metal-doped MgO diluted magnetic thin films are appropriate candidates for spintronic applications and designing magnetic devices and sensors. Therefore, MgO:Co and MgO:Cu films were deposited on glass substrates by Chemical Spray Pyrolysis (CSP) method different thin film deposition parameters. Deposited different transition metal doped MgO thin films were compared in terms of optic and structural properties. Comparison optic analysis of the films was investigated spectral absorption and transmittance measurements by UV-Vis double beam spectrophotometer technique. Comparison structural analysis of the thin films was examined by using XRD, Raman Analysis, SEM, EDX and AFM techniques. The transition metal-doped; MgO:Co and MgO:Cu thin films maybe have potential applications in spintronics and magnetic data storage.

  9. Structural evolution of dilute magnetic (Sn,Mn)Se films grown by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Kanzyuba, Vasily; Dong, Sining; Liu, Xinyu; Li, Xiang; Rouvimov, Sergei; Okuno, Hanako; Mariette, Henri; Zhang, Xueqiang; Ptasinska, Sylwia; Tracy, Brian D.; Smith, David J.; Dobrowolska, Margaret; Furdyna, Jacek K.

    2017-02-01

    We describe the structural evolution of dilute magnetic (Sn,Mn)Se films grown by molecular beam epitaxy on GaAs (111) substrates, as revealed by transmission electron microscopy, X-ray diffraction, and X-ray photoelectron spectroscopy. When the Mn concentration is increased, the lattice of the ternary (Sn,Mn)Se films evolves quasi-coherently from a SnSe2 two-dimensional (2D) crystal structure into a more complex quasi-2D lattice rearrangement, ultimately transforming into the magnetically concentrated antiferromagnetic MnSe 3D rock-salt structure as Mn approaches 50 at. % of this material. These structural transformations are expected to underlie the evolution of magnetic properties of this ternary system reported earlier in the literature.

  10. Sol-gel synthesis and dilute magnetism of nano MgO powder doped with Fe

    NASA Astrophysics Data System (ADS)

    Nomura, Kiyoshi; Taya, Souichirou; Okazawa, Atsushi; Kojima, Norimichi

    2014-04-01

    Mg oxides doped with 1 % 57Fe were prepared by a sol-gel method, and annealed at various temperatures. Nano-size Mg oxides were characterized by Mössbauer spectrometry, magnetization and XRD measurements. The crystalline size of MgO increases with increase of annealing temperature. Samples annealed at 600 °C and 800 °C gave only doublet peaks of paramagnetic Fe3+ in Mössbauer spectra although Fe3+ doping into MgO induced a distorted structure and showed weak ferromagnetism. It is considered that the magnetic property is due to defect induced magnetism by doping Fe3+ into MgO. For a sample heated at 1000 °C, it is found from low temperature Mössbauer spectra that Fe3+ species are located at the core and shell of fine MgFe2O4 grains and diluted in MgO matrix.

  11. On the self-organization of magnetic field and highly diluted matter in astrophysics

    NASA Astrophysics Data System (ADS)

    Berdichevsky, D. B.

    2015-12-01

    It is explored the self organization of matter and field in regions beyond our common reach on the surface of our planet and its atmospheric surroundings. This state of matter, which most basic property, the freezing in the magnetic field, see e.g., Chew et al, 1956, has proved to exist in the regions where robotic observations in the near and far space perform detailed observations of magnetic fields, and extreme dilute plasma (commonly about 1000 to 0.1 or less ionized particles per cubic cm). We present and discuss here simple hypotheses on the nature of what could be this state of magnetized matter which in the electron distribution shows a shape which often can successfully be described with a kappa distribution when inside a strongly magnetized transient, of the magnetic cloud kind, see e.g., Nieves Chinchilla and Figueroa-Viñas, 2008. This work is in many ways an extension of Alfven work on magnetized space plasmas, Alven, 1942. Chew, G.F., M.L., Goldberger, and F.E. Low, 1956, the Royal Soc. London, section Math & Phys Sc., 236, pp. 112. Nieves-Chinchilla, T., and A., Figueroa-Viñas, 2008, J. Geophys. Res., 113, A02105. Alfvén, H (1942). "Existence of electromagnetic-hydrodynamic waves". Nature 150: 405.. doi:10.1038/150405d0

  12. Concentration dependence of the wings of a dipole-broadened magnetic resonance line in magnetically diluted lattices

    NASA Astrophysics Data System (ADS)

    Zobov, V. E.; Kucherov, M. M.

    2017-01-01

    The singularities of the time autocorrelation functions (ACFs) of magnetically diluted spin systems with dipole-dipole interaction (DDI), which determine the high-frequency asymptotics of autocorrelation functions and the wings of a magnetic resonance line, are studied. Using the self-consistent fluctuating local field approximation, nonlinear equations are derived for autocorrelation functions averaged over the independent random arrangement of spins (magnetic atoms) in a diamagnetic lattice with different spin concentrations. The equations take into account the specificity of the dipole-dipole interaction. First, due to its axial symmetry in a strong static magnetic field, the autocorrelation functions of longitudinal and transverse spin components are described by different equations. Second, the long-range type of the dipole-dipole interaction is taken into account by separating contributions into the local field from distant and near spins. The recurrent equations are obtained for the expansion coefficients of autocorrelation functions in power series in time. From them, the numerical value of the coordinate of the nearest singularity of the autocorrelation function is found on the imaginary time axis, which is equal to the radius of convergence of these expansions. It is shown that in the strong dilution case, the logarithmic concentration dependence of the coordinate of the singularity is observed, which is caused by the presence of a cluster of near spins whose fraction is small but contribution to the modulation frequency is large. As an example a silicon crystal with different 29Si concentrations in magnetic fields directed along three crystallographic axes is considered.

  13. Crossing and anti-crossing effects of polaritons in a magnetic-semiconductor superlattice influenced by an external magnetic field

    NASA Astrophysics Data System (ADS)

    Tuz, Vladimir R.; Fesenko, Volodymyr I.; Fedorin, Illia V.; Sun, Hong-Bo; Shulga, Valeriy M.

    2017-03-01

    Crossing and anti-crossing effects in dispersion characteristics of both bulk and surface polaritons in a magnetic-semiconductor superlattice influenced by an external static magnetic field being in the Faraday geometry are discussed. The bulk polaritons are classified as eigenwaves with right-handed and left-handed elliptically polarized states, whereas the surface polaritons are considered as hybrid modes having a predominant effect of either magnetic or semiconductor subsystem, and distinctions in dispersion characteristics of such polaritons are revealed involving the concept of critical points.

  14. Electronic structure and magnetic properties of dilute U impurities in metals

    NASA Astrophysics Data System (ADS)

    Mohanta, S. K.; Cottenier, S.; Mishra, S. N.

    2016-05-01

    The electronic structure and magnetic moment of dilute U impurity in metallic hosts have been calculated from first principles. The calculations have been performed within local density approximation of the density functional theory using Augmented plane wave+local orbital (APW+lo) technique, taking account of spin-orbit coupling and Coulomb correlation through LDA+U approach. We present here our results for the local density of states, magnetic moment and hyperfine field calculated for an isolated U impurity embedded in hosts with sp-, d- and f-type conduction electrons. The results of our systematic study provide a comprehensive insight on the pressure dependence of 5f local magnetism in metallic systems. The unpolarized local density of states (LDOS), analyzed within the frame work of Stoner model suggest the occurrence of local moment for U in sp-elements, noble metals and f-block hosts like La, Ce, Lu and Th. In contrast, U is predicted to be nonmagnetic in most transition metal hosts except in Sc, Ti, Y, Zr, and Hf consistent with the results obtained from spin polarized calculation. The spin and orbital magnetic moments of U computed within the frame of LDA+U formalism show a scaling behavior with lattice compression. We have also computed the spin and orbital hyperfine fields and a detail analysis has been carried out. The host dependent trends for the magnetic moment, hyperfine field and 5f occupation reflect pressure induced change of electronic structure with U valency changing from 3+ to 4+ under lattice compression. In addition, we have made a detailed analysis of the impurity induced host spin polarization suggesting qualitatively different roles of f-band electrons on moment stability. The results presented in this work would be helpful towards understanding magnetism and spin fluctuation in U based alloys.

  15. Tunable acoustic attenuation in dilute suspensions of subwavelength, non-spherical magnetic particles

    NASA Astrophysics Data System (ADS)

    Yuan, W.; Liu, L.; Shan, J. W.

    2017-01-01

    The microstructure (e.g., particle orientation and chaining) of suspensions of non-spherical ferromagnetic particles can be controlled by an external field, potentially making it possible to tune the acoustic properties of the suspension. Here, we experimentally demonstrate that dilute suspensions of subwavelength-sized oblate-spheroidal nickel particles exhibit up to a 35% change in attenuation coefficient at MHz frequencies upon changing the direction of an external magnetic field, for particle volume fractions of only 0.5%. Comparison is made to suspensions of spherical particles, in which the attenuation is smaller and nearly isotropic. Optical transmission measurements and analysis of the characteristic timescales of particle alignment and chaining are also performed to investigate the reasons for this acoustic anisotropy. The alignment of the oblate-spheroidal particles is found to be the dominant mechanism for the anisotropic and tunable acoustic attenuation of these suspensions.

  16. Magnetic dilution and domain selection in the X Y pyrochlore antiferromagnet Er2Ti2O7

    NASA Astrophysics Data System (ADS)

    Gaudet, J.; Hallas, A. M.; Maharaj, D. D.; Buhariwalla, C. R. C.; Kermarrec, E.; Butch, N. P.; Munsie, T. J. S.; Dabkowska, H. A.; Luke, G. M.; Gaulin, B. D.

    2016-08-01

    Below TN=1.1 K, the X Y pyrochlore Er2Ti2O7 orders into a k =0 noncollinear, antiferromagnetic structure referred to as the ψ2 state. The magnetic order in Er2Ti2O7 is known to obey conventional three-dimensional (3D) percolation in the presence of magnetic dilution, and in that sense is robust to disorder. Recently, however, two theoretical studies have predicted that the ψ2 structure should be unstable to the formation of a related ψ3 magnetic structure in the presence of magnetic vacancies. To investigate these theories, we have carried out systematic elastic and inelastic neutron scattering studies of three single crystals of Er2 -xYxTi2O7 with x =0 (pure), 0.2 (10 %Y ) and 0.4 (20 % Y ), where magnetic Er3 + is substituted by nonmagnetic Y3 +. We find that the ψ2 ground state of pure Er2Ti2O7 is significantly affected by magnetic dilution. The characteristic domain selection associated with the ψ2 state, and the corresponding energy gap separating ψ2 from ψ3, vanish for Y3 + substitutions between 10 % Y and 20 % Y , far removed from the three-dimensional percolation threshold of ˜60 % Y . The resulting ground state for Er2Ti2O7 with magnetic dilutions from 20 % Y up to the percolation threshold is naturally interpreted as a frozen mosaic of ψ2 and ψ3 domains.

  17. Magneto-optical studies of magnetic and non-magnetic narrow-gap semiconductors

    NASA Astrophysics Data System (ADS)

    Khodaparast, Giti

    2005-03-01

    In light of the growing interest in spin-related phenomena and devices, there is now renewed interest in the science and engineering of narrow gap semiconductors. Narrow gap semiconductors (NGS) offer many unique features such as small effective masses, high intrinsic mobilities, large effective g- factors, and large spin-orbit coupling effects. This talk will discuss our recent magneto-optical studies on InSb quantum wells (QWs) and InMnAs ferromagnetic heterostructures. In InSb QWs, we observe spin-resolved cyclotron resonance (CR) caused by the non- parabolicity in conduction band and electron spin resonance in symmetric and asymmetric confinement potentials. The asymmetric wells exhibit a strong deviation in behavior from the symmetric wells at low magnetic fields with far more spin splitting than expected from the bulk g-factor of InSb. In InMnAs/GaSb we observe light and heavy hole CR peaks which demonstrate the existence of delocalized p-like carriers. In addition, In order to increase our understanding of the dynamics of carriers and spins, we performed time resolved measurements such as time- resolved CR spectroscopy on undoped InSb QWs and time-resolved magneto-optical Kerr effect on InMnAs/GaSb. Our results are important for understanding the electronic and magnetic states in NGS. This work was performed in collaboration with M. B. Santos and R. E. Doezema at the Univ. of Oklahoma, J. Wang and J. Kono at Rice Univ., H. Munekata at Tokyo Institute of Technology, C. J. Stanton at the Univ. of Florida, and Y. H. Matsuda and N. Miura at the Univ. of Tokyo.

  18. DARPA-URI Consortium Meetings on Submicron Heterostructures of Diluted Magnetic Semiconductors.

    DTIC Science & Technology

    1987-01-01

    Mn.S and Cdl-_xMn.Se", Solid State Commun. 62, 235 (1987). - 16- 29. A.K. Arora and A.K. Ramdas, "Resonance Raman Scattering from Defects in CdSe ", Phys...Telluride by a Modified Horizontal Bridgman Technique" (to be published in the Proceedings of the 1986 MRS Symposium on Infrared Detectors and Sources). 124...Giles and J.F. Schet- zina, "Growth and Characterization of High Quality, Low Defect, Subgrain Free Cadmium Telluride by a Modified Horizontal Bridgman

  19. Diluted magnetic semiconductors formed by an ion implantation and pulsed-laser melting

    SciTech Connect

    Scarpulla, M.A.; Daud, U.; Yu, K.M.; Monteiro, O.; Liliental-Weber; Zakharov, D.; Walukiewicz, W.; Dubon, O.D.

    2003-07-23

    Using ion implantation followed by pulsed-laser melting (PLM), we have synthesized ferromagnetic films of Ga{sub 1-x}Mn{sub x}As. Ion-channeling experiments reveal that these films are single crystalline and have high Mn substitutionality while variable temperature resistivity measurements reveal the strong Mn-hole interactions characteristic of carrier-mediated ferromagnetism in homogeneous DMS's. We have observed Curie temperatures (T{sub C}'s) of approximately 80 K for films with substitutional Mn concentrations of x=0.04. The use of n-type counter doping as a means of increasing Mn substitutionality and T{sub c} is explored by co-implantation of Mn and Te into GaAs. In Ga{sub 1-x}Mn{sub x}P samples synthesized using our technique, the implanted layer regrows as an epitaxial single crystal capped by a highly defective surface layer. These samples display ferromagnetism with T{sub c} {approx} 23 K.

  20. Field-effect transistors fabricated from diluted magnetic semiconductor colloidal nanowires

    NASA Astrophysics Data System (ADS)

    Li, Zhen; Du, Ai Jun; Sun, Qiao; Aljada, Muhsen; Zhu, Zhong Hua; Lu, Gao Qing (Max)

    2012-02-01

    Field-effect transistors (FETs) fabricated from undoped and Co2+-doped CdSe colloidal nanowires show typical n-channel transistor behaviour with gate effect. Exposed to microscope light, a 10 times current enhancement is observed in the doped nanowire-based devices due to the significant modification of the electronic structure of CdSe nanowires induced by Co2+-doping, which is revealed by theoretical calculations from spin-polarized plane-wave density functional theory.Field-effect transistors (FETs) fabricated from undoped and Co2+-doped CdSe colloidal nanowires show typical n-channel transistor behaviour with gate effect. Exposed to microscope light, a 10 times current enhancement is observed in the doped nanowire-based devices due to the significant modification of the electronic structure of CdSe nanowires induced by Co2+-doping, which is revealed by theoretical calculations from spin-polarized plane-wave density functional theory. Z. Li gratefully acknowledges the support from Queensland Smart Futures Fellowship, UQ early-career-research grant and UQ new staff research startup grant. Support from the Australian Research Council (through its centres program) to the ARC Centre of Excellence for Functional Nanomaterials is also gratefully acknowledged.

  1. Field-effect transistors fabricated from diluted magnetic semiconductor colloidal nanowires.

    PubMed

    Li, Zhen; Du, Ai Jun; Sun, Qiao; Aljada, Muhsen; Zhu, Zhong Hua; Lu, Gao Qing Max

    2012-02-21

    Field-effect transistors (FETs) fabricated from undoped and Co(2+)-doped CdSe colloidal nanowires show typical n-channel transistor behaviour with gate effect. Exposed to microscope light, a 10 times current enhancement is observed in the doped nanowire-based devices due to the significant modification of the electronic structure of CdSe nanowires induced by Co(2+)-doping, which is revealed by theoretical calculations from spin-polarized plane-wave density functional theory.

  2. Temperature quenching of intracenter luminescence of Mn2+ ions in diluted magnetic semiconductors

    NASA Astrophysics Data System (ADS)

    Agekyan, V. F.; Serov, A. Yu.; Filosofov, N. G.; Shtrom, I. V.; Karczewski, G.

    2016-10-01

    The temperature dependence of the spectral composition and intensity of intracenter luminescence of the Mn2+ 3d shell and the temperature dependence of the luminescence excitation spectra in an epitaxial layer of Cd0.2Mn0.8Te at different levels of optical excitation are investigated. It is found that in the crystals of type II1- x Mn x VI with a high concentration of manganese, the characteristics of intracenter luminescence of Mn2+ depend on the efficiency of excitation migration over manganese ions. Under migration conditions, the luminescence quantum yield is determined by the cooperative effect (up-conversion).

  3. Boron and Nitrogen Doped Single walled Carbon Nanotubes as Possible Dilute Magnetic Semiconductors

    PubMed Central

    2007-01-01

    The structure of single walled armchair and zig-zag carbon nanotubes having 70 atoms and two carbons replaced by boron or nitrogen is obtained at minium energy using HF/6-31G* molecular orbital theory. The calculations show that the ground state of the zig-zag tubes is a triplet state while for the armchair tubes it is a singlet. In the zig-zag tubes the density of states at the Fermi level is greater for the spin down states compared to the spin up state indicating that the doped tubes could be ferromagnetic.

  4. Magnetic anisotropy induced by crystal distortion in Ge{sub 1−x}Mn{sub x}Te/PbTe//KCl (001) ferromagnetic semiconductor layers

    SciTech Connect

    Knoff, W. Łusakowski, A.; Domagała, J. Z.; Minikayev, R.; Taliashvili, B.; Łusakowska, E.; Pieniążek, A.; Szczerbakow, A.; Story, T.

    2015-09-21

    Ferromagnetic resonance (FMR) study of magnetic anisotropy is presented for thin layers of IV-VI diluted magnetic semiconductor Ge{sub 1−x}Mn{sub x}Te with x = 0.14 grown by molecular beam epitaxy on KCl (001) substrate with a thin PbTe buffer. Analysis of the angular dependence of the FMR resonant field reveals that an easy magnetization axis is located near to the normal to the layer plane and is controlled by two crystal distortions present in these rhombohedral Ge{sub 1−x}Mn{sub x}Te layers: the ferroelectric distortion with the relative shift of cation and anion sub-lattices along the [111] crystal direction and the biaxial in-plane, compressive strain due to thermal mismatch.

  5. Chemical order and magnetic behavior of Fe-dilute fcc Fe-Pd nanoparticles

    NASA Astrophysics Data System (ADS)

    Guirado-López, R. A.; Desjonquères, M. C.; Spanjaard, D.

    2006-08-01

    The chemical order and magnetic behavior of Fe-dilute fcc Fe-Pd nanoparticles are theoretically investigated using many-body potentials derived in the framework of the generalized second moment approximation (SMA) and self-consistent spin-polarized tight-binding electronic structure calculations, respectively. The SMA total energy calculations reveal that surface sites and the core region are not favorable positions for the Fe impurities and that they prefer to accumulate in the subsurface region of the particles, showing a very strong tendency to separate. However, additional contrasting atomic configurations close in energy are also found which could imply the coexistence in real samples of several Fe-Pd nanoparticles with a well-defined composition, but having different chemical orderings. Magnetic properties are first investigated for a single Fe impurity in bulk Pd, allowing an extension of the polarization cloud around the Fe atom much larger than in an ab initio calculation. The results are in good agreement with experiments and serve as a reference to identify surface and size effects in FePd nanoparticles. Nanoparticles containing from 135 to 561 atoms with up to three Fe substitutional impurities are then investigated, as well as more concentrated ( ≃10% Fe content) shell structures. The extension and magnetic structure of the Fe-induced polarization cloud is studied in detail as a function of the size, surface termination, and the precise location and number of the iron impurities in the particles. The local electronic structure at the Pd sites located at the outermost atomic shell is considerably perturbed by the subsurface position of the Fe atoms and could modify the catalytic properties of palladium nanoparticles. Finally, we show that the value of the orbital-to-spin ratio in our Fe-Pd clusters is very sensitive to the changes in the internal position of the Fe impurities, a result that suggests that x-ray magnetic circular dichroism experiments

  6. Anti-site-induced diverse diluted magnetism in LiMgPdSb-type CoMnTiSi alloy

    NASA Astrophysics Data System (ADS)

    Lin, T. T.; Dai, X. F.; Guo, R. K.; Cheng, Z. X.; Wang, L. Y.; Wang, X. T.; Liu, G. D.

    2017-02-01

    The effect of three kinds of anti-site disorder to electronic structure and magnetic properties of the LiMgPdSb-type CoMnTiSi alloy are investigated. It was found the Mn-Ti anti-site disorder can induce the diluted magnetism in CoMnTiSi matrix. The magnetic structure has an oscillation between the ferromagnetic and antiferromagnetic states with the different degree of Mn-Ti anti-site disorder. Two novel characteristics: the diluted antiferromagnetic half-metallicity and the diluted zero-gap half-metallity are found in the different degree range of the Mn-Ti anti-site disorder. The Co-Mn and Co-Ti anti-site disorder have little effect on the magnetic properties. The width of energy gap and the intensity of DOS at the Fermi level can be adjusted by the degree of Co-Mn or Co-Ti anti-site disorder. The independent control to the carrier concentration and magnetization can be realized by introducing the different anti-site disorder.

  7. Anti-site-induced diverse diluted magnetism in LiMgPdSb-type CoMnTiSi alloy.

    PubMed

    Lin, T T; Dai, X F; Guo, R K; Cheng, Z X; Wang, L Y; Wang, X T; Liu, G D

    2017-02-07

    The effect of three kinds of anti-site disorder to electronic structure and magnetic properties of the LiMgPdSb-type CoMnTiSi alloy are investigated. It was found the Mn-Ti anti-site disorder can induce the diluted magnetism in CoMnTiSi matrix. The magnetic structure has an oscillation between the ferromagnetic and antiferromagnetic states with the different degree of Mn-Ti anti-site disorder. Two novel characteristics: the diluted antiferromagnetic half-metallicity and the diluted zero-gap half-metallity are found in the different degree range of the Mn-Ti anti-site disorder. The Co-Mn and Co-Ti anti-site disorder have little effect on the magnetic properties. The width of energy gap and the intensity of DOS at the Fermi level can be adjusted by the degree of Co-Mn or Co-Ti anti-site disorder. The independent control to the carrier concentration and magnetization can be realized by introducing the different anti-site disorder.

  8. Anti-site-induced diverse diluted magnetism in LiMgPdSb-type CoMnTiSi alloy

    PubMed Central

    Lin, T. T.; Dai, X. F.; Guo, R. K.; Cheng, Z. X.; Wang, L. Y.; Wang, X. T.; Liu, G. D.

    2017-01-01

    The effect of three kinds of anti-site disorder to electronic structure and magnetic properties of the LiMgPdSb-type CoMnTiSi alloy are investigated. It was found the Mn-Ti anti-site disorder can induce the diluted magnetism in CoMnTiSi matrix. The magnetic structure has an oscillation between the ferromagnetic and antiferromagnetic states with the different degree of Mn-Ti anti-site disorder. Two novel characteristics: the diluted antiferromagnetic half-metallicity and the diluted zero-gap half-metallity are found in the different degree range of the Mn-Ti anti-site disorder. The Co-Mn and Co-Ti anti-site disorder have little effect on the magnetic properties. The width of energy gap and the intensity of DOS at the Fermi level can be adjusted by the degree of Co-Mn or Co-Ti anti-site disorder. The independent control to the carrier concentration and magnetization can be realized by introducing the different anti-site disorder. PMID:28169311

  9. Nonreciprocal propagation of surface plasmon mode guided through graphene layer on magnetized semiconductor

    NASA Astrophysics Data System (ADS)

    Bhagyaraj, C.; Mathew, Vincent

    2017-01-01

    This paper discusses the nonreciprocal effect induced by magnetized semiconductor substrate on surface plasmon mode guided through monolayer graphene. Dispersion relation for the fundamental antisymmetric mode is derived analytically. Nonreciprocal propagation characteristics of fundamental mode is studied as a function of wavelength, graphene layer chemical potential and biasing magnetic field. Fundamental mode exhibits appreciable nonreciprocal dispersion for transversal magnetization of semiconductor substrate in midinfrared and terahertz frequencies. Cutoff wavelength for backward propagating mode is observed above 2.5 T of external biasing field. Cutoff wavelength is found to be decreasing with increase in the biasing magnetic field and cladding index, also identified to be independent of graphene layer chemical potential. Proposed waveguide structure suggests the possibility of realizing one way propagating plasmonic waveguides with widely tunable guiding characteristics and related functional devices such as isolators, modulators, phase shifters and switches for integrated photonic circuits.

  10. Magnetic coupling in ferromagnetic semiconductor (Ga,Mn)As/(Al,Ga,Mn)As bilayers

    SciTech Connect

    Wang, M.; Wadley, P.; Campion, R. P.; Rushforth, A. W.; Edmonds, K. W.; Gallagher, B. L.; Charlton, T. R.; Kinane, C. J.; Langridge, S.

    2015-08-07

    We report on a study of ferromagnetic semiconductor (Ga,Mn)As/(Al,Ga,Mn)As bilayers using magnetometry and polarized neutron reflectivity (PNR). From depth-resolved characterization of the magnetic structure obtained by PNR, we concluded that the (Ga,Mn)As and (Al,Ga,Mn)As layers have in-plane and perpendicular-to-plane magnetic easy axes, respectively, with weak interlayer coupling. Therefore, the layer magnetizations align perpendicular to each other under low magnetic fields and parallel at high fields.

  11. Sodalite-like rare-earth carbonates: a study of structural transformation and diluted magnetism.

    PubMed

    Wang, Yanyan; Han, Tian; Ding, You-Song; Zheng, Zhiping; Zheng, Yan-Zhen

    2016-01-21

    A series of novel rare earth carbonates, RE3(OH)6(CO3)Cl (RE = Dy, Er, Y), with sodalite-like (SOD-like) zeolite topologies have been successfully synthesized by introducing an appropriate amount of CO3(2-) from NaCO3 or atmospheric carbon dioxide as a template. Single-crystal X-ray diffraction reveals that the structure consists of the RE3(OH)6(3+) cationic framework with a SOD-like topology built from vertex-sharing [RE4(μ3-OH)4] cubes. The CO3(2-) anions seal the 6-ring opening and Cl(-) anions situated in the channels to achieve charge balance. After calcination at 370 °C, the compound RE3(OH)6(CO3)Cl in situ transforms into a new phase formulated as RE3O4Cl. Interestingly, the structure of RE3O4Cl represents a new SOD-like open framework, associated with the removal of the CO3(2-) from RE3(OH)6(CO3)Cl. The samples are characterized by thermogravimetric analysis (TGA), elemental analysis, X-ray photoelectron spectroscopy and magnetic studies. Furthermore, single-molecule magnet behaviours can be observed for the diluted samples of Dy0.0068Y2.9932(OH)6(CO3)Cl and Dy0.0068Y2.9932O4Cl with a Dy/Y molar ratio of up to 1/440 as well as Er0.19Y2.81(OH)6(CO3)Cl with an Er/Y ratio of 1/15, showing dominant single-ion effects.

  12. Theoretical and experimental investigations of superconductivity. Amorphous semiconductors, superconductivity and magnetism

    NASA Technical Reports Server (NTRS)

    Cohen, M. H.

    1973-01-01

    The research activities from 1 March 1963 to 28 February 1973 are summarized. Major lectures are listed along with publications on superconductivity, superfluidity, electronic structures and Fermi surfaces of metals, optical spectra of solids, electronic structure of insulators and semiconductors, theory of magnetic metals, physics of surfaces, structures of metals, and molecular physics.

  13. Parametric distortion of the optical absorption edge of a magnetic semiconductor by a strong laser field

    SciTech Connect

    Nunes, O.A.C.

    1985-09-15

    The influence of a strong laser field on the optical absorption edge of a direct-gap magnetic semiconductor is considered. It is shown that as the strong laser intensity increases the absorption coefficient is modified so as to give rise to an absorption tail below the free-field forbidden gap. An application is made for the case of the EuO.

  14. Magnetic Field Applications in Semiconductor Crystal Growth and Metallurgy

    NASA Technical Reports Server (NTRS)

    Mazuruk, Konstantin; Ramachandran, Narayanan; Grugel, Richard; Curreri, Peter A. (Technical Monitor)

    2002-01-01

    The Traveling Magnetic Field (TMF) technique, recently proposed to control meridional flow in electrically conducting melts, is reviewed. In particular, the natural convection damping capability of this technique has been numerically demonstrated with the implication of significantly improving crystal quality. Advantages of the traveling magnetic field, in comparison to the more mature rotating magnetic field method, are discussed. Finally, results of experiments with mixing metallic alloys in long ampoules using TMF is presented

  15. Influence of spin correlations on band structure of magnetic semiconductors

    NASA Astrophysics Data System (ADS)

    Sinkkonen, J.

    1981-06-01

    A perturbation treatment of the s-f interaction in ferromagnetic semiconductors is presented. The many-spin correlation functions are expressed in terms of connected correlation functions which are constructed by the meanfield theory. For the self-energy an integral equation is obtained which includes correlation effects. The method of calculation is closely connected with the coherent-potential approximation. As an application the density of states is shown in various cases by allowing the bandwidth to vary from broad- to narrow-band regime. The calculation is limited to the paramagnetic phase. Correlation effects are seen as temperature-dependent changes in the density of states.

  16. Nuclear magnetic relaxation studies of semiconductor nanocrystals and solids

    NASA Astrophysics Data System (ADS)

    Sachleben, J. R.

    1993-09-01

    Semiconductor nanocrystals, small biomolecules, and C-13 enriched solids were studied through the relaxation in NMR spectra. Surface structure of semiconductor nanocrystals (CdS) was deduced from high resolution H-1 and C-13 liquid state spectra of thiophenol ligands on the nanocrystal surfaces. The surface coverage by thiophenol was found to be low, being 5.6 and 26% for nanocrystal radii of 11.8 and 19.2 angstrom. Internal motion is estimated to be slow with a correlation time greater than 10(exp -8) s(exp -1). The surface thiophenol ligands react to form a dithiophenol when the nanocrystals were subjected to O2 and ultraviolet. A method for measuring (N-14)-(H-1) J-couplings is demonstrated on pyridine and the peptide oxytocin; selective 2D T(sub 1) and T(sub 2) experiments are presented for measuring relaxation times in crowded spectra with overlapping peaks in 1D, but relaxation effects interfere. Possibility of carbon-carbon cross relaxation in C-13 enriched solids is demonstrated by experiments on zinc acetate and L-alanine.

  17. Nuclear magnetic relaxation studies of semiconductor nanocrystals and solids

    SciTech Connect

    Sachleben, Joseph Robert

    1993-09-01

    Semiconductor nanocrystals, small biomolecules, and 13C enriched solids were studied through the relaxation in NMR spectra. Surface structure of semiconductor nanocrystals (CdS) was deduced from high resolution 1H and 13C liquid state spectra of thiophenol ligands on the nanocrystal surfaces. The surface coverage by thiophenol was found to be low, being 5.6 and 26% for nanocrystal radii of 11.8 and 19.2 Å. Internal motion is estimated to be slow with a correlation time > 10-8 s-1. The surface thiophenol ligands react to form a dithiophenol when the nanocrystals were subjected to O2 and ultraviolet. A method for measuring 14N-1H J-couplings is demonstrated on pyridine and the peptide oxytocin; selective 2D T1 and T2 experiments are presented for measuring relaxation times in crowded spectra with overlapping peaks in 1D, but relaxation effects interfere. Possibility of carbon-carbon cross relaxation in 13C enriched solids is demonstrated by experiments on zinc acetate and L-alanine.

  18. Technique for magnetic susceptibility determination in the highly doped semiconductors by electron spin resonance

    SciTech Connect

    Veinger, A. I.; Zabrodskii, A. G.; Tisnek, T. V.; Goloshchapov, S. I.; Semenikhin, P. V.

    2014-08-20

    A method for determining the magnetic susceptibility in the highly doped semiconductors is considered. It is suitable for the semiconductors near the metal - insulator transition when the conductivity changes very quickly with the temperature and the resonance line form distorts. A procedure that is based on double integration of the positive part of the derivative of the absorption line having a Dyson shape and takes into account the depth of the skin layer is described. Analysis is made for the example of arsenic-doped germanium samples at a rather high concentration corresponding to the insulator-metal phase transition.

  19. Nonequilibrium nuclear polarization and induced hyperfine and dipolar magnetic fields in semiconductor nanostructures

    NASA Astrophysics Data System (ADS)

    Ţifrea, Ionel; Flatté, Michael E.

    2011-10-01

    We investigate the dynamic nuclear polarization (DNP) caused by hyperfine coupling between nonequilibrium electronic spins and nuclear spins in semiconductor nanostructures. We derive the time and position dependence of the resulting hyperfine and dipolar magnetic fields. In GaAs quantum wells the induced nuclear spin polarization greatly exceeds the polarization of the electronic system that causes the DNP. The induced magnetic fields vary between tens of tesla for the electronic hyperfine field acting on nuclei, to hundreds of gauss for the nuclear hyperfine field acting on electrons, to a few gauss for the induced nuclear dipolar fields that act on both nuclei and electrons. The field strengths should be measurable via optically induced nuclear magnetic resonance or time-resolved Faraday rotation experiments. We discuss the implications of our calculations for low-dimensional semiconductor nanostructures.

  20. Anomalous Magnetic Field Dependence of Charge Carrier Density in Ferromagnetic Semiconductors

    NASA Astrophysics Data System (ADS)

    Kuivalainen, P.; Sinkkonen, J.; Stubb, T.

    1980-01-01

    This paper reports calculations of temperature and magnetic field dependent thermal and optical activation energies of a shallow donor state and the energy of the conduction band edge in a ferromagnetic semiconductor. The formation of the bound magnetic polaron (BMP), i.e., a magnetically polarized cluster associated with the donor electron, is taken into account. The solution of a set of coupled equations for the energy of a donor electron and for the local non-uniform magnetization around the donor center indicates that the activation energies have their maxima near the Curie temperature and decrease with the application of a magnetic field. This decrease leads to a strong magnetic field dependence of the charge carrier density nc explains well the giant negative magnetoresistance of EuSe observed experimentally at low temperatures.

  1. Magnetoreflection spectroscopy of monolayer transition-metal dichalcogenide semiconductors in pulsed magnetic fields

    DOE PAGES

    Stier, Andreas V.; McCreary, Kathleen M.; Jonker, Berend T.; ...

    2016-05-13

    The authors describe recent experimental efforts to perform polarization-resolved optical spectroscopy of monolayer transition-metal dichalcogenide semiconductors in very large pulsed magnetic fields to 65 T. The experimental setup and technical challenges are discussed in detail, and temperature-dependent magnetoreflection spectra from atomically thin tungsten disulphide are presented. The data clearly reveal not only the valley Zeeman effect in these two-dimensional semiconductors but also the small quadratic exciton diamagnetic shift from which the very small exciton size can be directly inferred. Lastly, the authors present model calculations that demonstrate how the measured diamagnetic shifts can be used to constrain estimates of themore » exciton binding energy in this new family of monolayer semiconductors.« less

  2. Magnetoreflection spectroscopy of monolayer transition-metal dichalcogenide semiconductors in pulsed magnetic fields

    SciTech Connect

    Stier, Andreas V.; McCreary, Kathleen M.; Jonker, Berend T.; Kono, Junichiro; Crooker, Scott A.

    2016-05-13

    The authors describe recent experimental efforts to perform polarization-resolved optical spectroscopy of monolayer transition-metal dichalcogenide semiconductors in very large pulsed magnetic fields to 65 T. The experimental setup and technical challenges are discussed in detail, and temperature-dependent magnetoreflection spectra from atomically thin tungsten disulphide are presented. The data clearly reveal not only the valley Zeeman effect in these two-dimensional semiconductors but also the small quadratic exciton diamagnetic shift from which the very small exciton size can be directly inferred. Lastly, the authors present model calculations that demonstrate how the measured diamagnetic shifts can be used to constrain estimates of the exciton binding energy in this new family of monolayer semiconductors.

  3. Study on the oxygen vacancy redistribution and the mechanism of electrical manipulation of ferromagnetism in diluted magnetic oxides

    SciTech Connect

    Ren, Shuxia; Dong, Jingyu; Chen, Wei Zhang, Liyong; Guo, Jiajun; Zhang, Li; Zhao, Jing; Zhao, Xu

    2015-12-21

    Electrical manipulation of room temperature ferromagnetism (RTFM) has been observed in several kinds of transition metal doped diluted magnetic oxide films. We demonstrate using X-ray photoelectron spectroscopy that the redistribution of the oxygen vacancies in a film under an electric field plays a crucial role in the enhancement of the RTFM. Based on a detailed analysis of the X-ray photoelectron spectroscopy data for the oxygen vacancy distribution in different resistive states, a unified mechanism has been proposed. This work points out a new direction for improving the magnetic properties of these materials by controlling oxygen vacancies in the interior of the films.

  4. Magnetic properties of multiferroics-semiconductors Eu1-xCexMn2O5

    NASA Astrophysics Data System (ADS)

    Sanina, V. A.; Golovenchits, E. I.; Zalesskii, V. G.; Scheglov, M. P.

    2011-11-01

    Studies of magnetization, magnetoresistance, and magnetic oscillations in semiconductor-multiferroics Eu1-xCexMn2O5 (x = 0.2-0.25) (ECMO) at temperatures ranging from 5 to 350 K in magnetic fields up to 6 T are presented. It is shown that phase separation and charge carrier self-organization in the crystals give rise to a layered superstructure perpendicular to the c axis. An effect of magnetic field cycling on the superstructure, magnetization, and magnetoresistance is demonstrated. X-ray diffraction studies of ECMO demonstrating the effect of magnetic field on the superstructure are presented. The de Haas-van Alphen magnetization oscillations in high magnetic fields and the temperature-induced magnetic oscillations in a fixed magnetic field are observed at low temperatures. Below 10 K the quantum corrections to magnetization due to the weak charge carrier localization in 2D superlattice layers occur. It is shown that at all the temperatures the Eu1-xCexMn2O5 magnetic state is dictated by superparamagnetism of isolated ferromagnetic domains.

  5. Spin noise explores local magnetic fields in a semiconductor

    NASA Astrophysics Data System (ADS)

    Ryzhov, Ivan I.; Kozlov, Gleb G.; Smirnov, Dmitrii S.; Glazov, Mikhail M.; Efimov, Yurii P.; Eliseev, Sergei A.; Lovtcius, Viacheslav A.; Petrov, Vladimir V.; Kavokin, Kirill V.; Kavokin, Alexey V.; Zapasskii, Valerii S.

    2016-02-01

    Rapid development of spin noise spectroscopy of the last decade has led to a number of remarkable achievements in the fields of both magnetic resonance and optical spectroscopy. In this report, we demonstrate a new – magnetometric – potential of the spin noise spectroscopy and use it to study magnetic fields acting upon electron spin-system of an n-GaAs layer in a high-Q microcavity probed by elliptically polarized light. Along with the external magnetic field, applied to the sample, the spin noise spectrum revealed the Overhauser field created by optically oriented nuclei and an additional, previously unobserved, field arising in the presence of circularly polarized light. This “optical field” is directed along the light propagation axis, with its sign determined by sign of the light helicity. We show that this field results from the optical Stark effect in the field of the elliptically polarized light. This conclusion is supported by theoretical estimates.

  6. Spin noise explores local magnetic fields in a semiconductor

    PubMed Central

    Ryzhov, Ivan I.; Kozlov, Gleb G.; Smirnov, Dmitrii S.; Glazov, Mikhail M.; Efimov, Yurii P.; Eliseev, Sergei A.; Lovtcius, Viacheslav A.; Petrov, Vladimir V.; Kavokin, Kirill V.; Kavokin, Alexey V.; Zapasskii, Valerii S.

    2016-01-01

    Rapid development of spin noise spectroscopy of the last decade has led to a number of remarkable achievements in the fields of both magnetic resonance and optical spectroscopy. In this report, we demonstrate a new – magnetometric – potential of the spin noise spectroscopy and use it to study magnetic fields acting upon electron spin-system of an n-GaAs layer in a high-Q microcavity probed by elliptically polarized light. Along with the external magnetic field, applied to the sample, the spin noise spectrum revealed the Overhauser field created by optically oriented nuclei and an additional, previously unobserved, field arising in the presence of circularly polarized light. This “optical field” is directed along the light propagation axis, with its sign determined by sign of the light helicity. We show that this field results from the optical Stark effect in the field of the elliptically polarized light. This conclusion is supported by theoretical estimates. PMID:26882994

  7. Extremely large magnetoresistance and magnetic logic by coupling semiconductor nonlinear transport effect and anomalous Hall Effect

    NASA Astrophysics Data System (ADS)

    Zhang, Xiaozhong; Luo, Zhaochu

    Size limitation of silicon FET hinders the further scaling down of silicon based CPU. To solve this problem, spin based magnetic logic devices were proposed but almost all of them could not be realized experimentally except for NOT logic operation. A magnetic field controlled reconfigurable semiconductor logic using InSb was reported. However, InSb is very expensive and not compatible with the silicon technology. Based on our Si based magnetoresistance (MR) device, we developed a Si based reconfigurable magnetic logic device, which could do all four Boolean logic operations including AND, OR, NOR and NAND. By coupling nonlinear transport effect of semiconductor and anomalous Hall effect of magnetic material, we propose a PMA material based MR device with a remarkable non local MR of >20000 % at ~1 mT. Based on this MR device, we further developed a PMA material based magnetic logic device which could do all four Boolean logic operations. This makes it possible that magnetic material does both memory and logic. This may result in a memory-logic integrated system leading to a non von Neumann computer

  8. Optically Detected Magnetic Resonance and Thermal Activation Spectroscopy Study of Organic Semiconductors

    SciTech Connect

    Kim, Chang-Hwan

    2003-01-01

    Organic electronic materials are a new class of emerging materials. Organic light emitting devices (OLEDs) are the most promising candidates for future flat panel display technologies. The photophysical characterization is the basic research step one must follow to understand this new class of materials and devices. The light emission properties are closely related to the transport properties of these materials. The objective of this dissertation is to probe the relation between transport and photophysical properties of organic semiconductors. The transport characteristics were evaluated by using thermally stimulated current and thermally stimulated luminescence techniques. The photoluminescence detected magnetic resonance and photoluminescence quantum yield studies provide valuable photophysical information on this class of materials. OLEDs are already in the market. However, detailed studies on the degradation mechanisms are still lacking. Since both optically detected magnetic resonance and thermal activation spectroscopy probe long-lived defect-related states in organic semiconductors, the combined study generates new insight on the OLED operation and degradation mechanisms.

  9. Nanoscale Measurements of Magnetism & Spin Coherence in Semiconductors

    DTIC Science & Technology

    2016-06-14

    characterize spin information on the atomic scale. In particular, we have developed the capability to perform spin polarized STM reliably using a vector...ferromangnetism in atomic chains of Fe and demonstrated that spin-orbit coupling at the surface of Pb can be detected with spin-polarized STM...on the atomic scale. In particular, we have developed the capability to perform spin polarized STM reliably using a vector magnet STM system and have

  10. Biofunctionalization of anisotropic nanocrystalline semiconductor-magnetic heterostructures.

    PubMed

    Depalo, Nicoletta; Carrieri, Pasquale; Comparelli, Roberto; Striccoli, Marinella; Agostiano, Angela; Bertinetti, Luca; Innocenti, Claudia; Sangregorio, Claudio; Curri, M Lucia

    2011-06-07

    Asymmetric binary nanocrystals (BNCs) formed by a spherical γ-Fe(2)O(3) magnetic domain epitaxially grown onto a lateral facet of a rodlike anatase TiO(2) nanorod have been functionalized with PEG-terminated phospholipids, resulting in a micellar system that enables the BNC dispersion in aqueous solution. The further processability of the obtained water-soluble BNC including PEG lipid micelles and their use in bioconjugation experiments has been successfully demonstrated by covalently binding to bovine serum albumin (BSA). The whole process has also been preliminarily performed on spherical iron oxide nanocrystals (NCs) and TiO(2) nanorods (NRs), which form single structural units in the heterostructures. Each step has been thoroughly monitored by using optical, structural, and electrophoretic techniques. In addition, an investigation of the magnetic behavior of the iron oxide NCs and BNCs, before and after incorporation into PEG lipid micelles and subsequently bioconjugation, has been carried out, revealing that the magnetic characteristics are mostly retained. The proposed approach to achieving water-soluble anisotropic BNCs and their bioconjugates has a large potential in catalysis and biomedicine and offers key functional building blocks for biosensor applications.

  11. Excimer laser induced diffusion in magnetic semiconductor quantum wells

    NASA Astrophysics Data System (ADS)

    Howari, H.; Sands, D.; Nicholls, J. E.; Hogg, J. H. C.; Stirner, T.; Hagston, W. E.

    2000-08-01

    Studies of pulsed laser annealing (PLA) of CdTe/CdMnTe quantum well structures are made in order to examine depth dependent effects in laser irradiated semiconductors. Since diffusion coefficients are strongly dependent on the temperature, depth resolution is achieved because the diffusion of Mn from the barriers into the quantum wells is depth dependent. Multiple quantum well (MQW) structures of CdTe/CdMnTe were annealed with single pulses from an XeCl laser at 308 nm. At a threshold of 90 mJ cm-2 two new emission bands are observed that are attributed to the diffusion of Mn from barrier layers to QWs. The diffusion associated with these bands, measured as the integrated product of the diffusion constant and time, is found to be 300 and 30 Å2. Calculations of the temperature, reached within the surface following PLA, using an analytical solution of the heat diffusion equation coupled with known high temperature diffusion coefficients predict the diffusion to decrease by one order of magnitude within one period at the top of the MQW stack. It is suggested that at the threshold surface melting occurs and that these emission bands arise from the QWs immediately beneath the melt front. The diffusion of Mn ions into the QWs is confirmed by magneto-optical data. A further emission band occurs at this same threshold with a Mn concentration above that of the concentration in the barrier layers of the MQW stack. This emission is attributed tentatively to the segregation of the Mn ion within the molten region following recrystallization.

  12. Room-temperature ferromagnetism in Zn{sub 1-x}Co{sub x}O magnetic semiconductors prepared by sputtering

    SciTech Connect

    Dinia, A.; Schmerber, G.; Meny, C.; Pierron-Bohnes, V.; Beaurepaire, E.

    2005-06-15

    We have used magnetron cosputtering to grow Zn{sub 1-x}Co{sub x}O magnetic dilute semiconductors. The growth has been performed on SiO{sub 2}/Si and Al{sub 2}O{sub 3}(0001) substrates. The Co concentration has been varied between 0.1 and 0.25 and the substrate temperature between room temperature and 600 deg. C. X-ray diffraction analysis has shown that for the films grown on Si substrates the structural quality of the film is improved by increasing the growth temperature and/or postgrowth annealing. The films are textured with c axis of the wurtzite structure along the growth direction. However, for the films grown on Al{sub 2}O{sub 3} substrate quasi-epitaxial films have been obtained for 600 deg. C substrate temperature. Magnetization measurements have shown that the ferromagnetism is directly correlated to the structural quality and appears by increasing the growth temperature and/or postgrowth annealing. Moreover, for the highly textured film a clear magnetic perpendicular anisotropy has been evidenced with the easy magnetization axis along the growth direction. To evidence the intrinsic nature of the ferromagnetism in the films, transmission optical measurements have been used. They show three absorption bands that are characteristics of d-d transitions of tetrahedrally coordinated Co{sup 2+}. This has been supported by nuclear magnetic resonance and magnetic thermal variation.

  13. Magnetic field effect in non-magnetic organic semiconductor thin film devices and its applications

    NASA Astrophysics Data System (ADS)

    Mermer, Omer

    Organic pi-conjugated materials have been used to manufacture devices such as organic light-emitting diodes (OLEDs), photovoltaic cells and field-effect transistors. Recently there has been growing interest in spin and magnetic field effects in these materials. In this thesis, I report on the discovery and experimental characterization of a large and intriguing magnetoresistance effect, which we dubbed organic magnetoresistance (OMAR), in various pi-conjugated polymer and small molecular OLEDs. OMAR may find application in magnetic field sensors in OLED interactive displays (patent pending). We discovered OMAR originally in devices made from the pi-conjugated polymer polyfluorene. We found ≈ 10% magnetoresistance at 10 mT fields at room temperature. The effect is independent of the field direction, and is only weakly temperature dependent. We show that OMAR is a bulk effect related to the majority carrier transport. Studying polymer films with different amount of disorder we found that low disorder/large mobility is not a necessary prerequisite for large OMAR response. We also studied a possible interrelation between spin-orbit coupling and the OMAR effect in platinum-containing polymers. We found that spin-orbit coupling has apparently little effect on OMAR. A large OMAR effect was also observed in devices made from the prototypical small molecule, Alq3 that is similar in size to that in the polyfluorene devices. Our study shows that the basic properties are equivalent to polymer devices. To the best of our knowledge, OMAR is not adequately described by any of the magnetoresistance mechanisms known to date. A future explanation for this effect may lead to a breakthrough in the scientific understanding of organic semiconductors. In a largely unrelated effort, we also modelled spin-dependent exciton formation in OLEDs. Our work leads to the following picture of exciton formation: Since the triplet exciton states lie lower in energy than singlets, more phonons must

  14. Ferromagnetism of magnetic semiconductors: Zhang-Rice limit

    NASA Astrophysics Data System (ADS)

    Dietl, T.; Matsukura, F.; Ohno, H.

    2002-07-01

    It is suggested that p-d hybridization contributes significantly to the hole binding energy Eb of Mn acceptors in III-V compounds, leading in an extreme case to the formation of Zhang-Rice-like small magnetic polarons. The model explains both the strong increase of Eb and the evolution of a Mn spin-resonance spectrum with the magnitude of valence-band offsets. The high Curie temperature above room temperature is shown to be in accordance with the mean-field Zener model.

  15. Detecting excitation and magnetization of individual dopants in a semiconductor two-dimensional electron gas

    NASA Astrophysics Data System (ADS)

    Wiebe, Jens

    2011-03-01

    Magnetic atoms doped into a semiconductor are the building blocks for bottom up spintronic and quantum logic devices. They also provide model systems for the investigation of fundamental effects. In order to correlate the dopant's atomic structure with its magnetism magnetically sensitive techniques with atomic resolution are a prerequisite. Here, I show electrical excitation and read-out [ 1 ] of single magnetic dopant associated spins in a two-dimensional electron gas (2DEG) confined to a semiconductor surface [ 2 ] using spin-resolved scanning tunneling spectroscopy [ 3 ] . I will review our real-space study of the quantum Hall transition in the 2DEG [ 2 ] and of the magnetic properties of the dopants [ 1 ] . Finally, I will demonstrate that the dopant serves as an atomic scale probe for local magnetometry of the 2DEG. This work was done in collaboration with A. A. Khajetoorians, B. Chillian, S. Schuwalow, F. Lechermann, K. Hashimoto, C. Sohrmann, T. Inaoka, F. Meier, Y. Hirayama, R. A. Römer, M. Morgenstern, and R. Wiesendanger. [ 1 ] A. A. Khajetoorians et al., Nature 467, 1084 (2010). [ 2 ] K. Hashimoto et al., Phys. Rev. Lett. 101, 256802 (2008). [ 3 ] J. Wiebe et al., Rev. Sci. Instrum. 75, 4871 (2004). We acknowledge financial support from ERC Advanced Grant ``FURORE'', by the DFG via SFB668 and GrK1286, and by the city of Hamburg via the cluster of excellence ``Nanospintronics''.

  16. Coexistence of bulk and surface polaritons in a magnetic-semiconductor superlattice influenced by a transverse magnetic field

    NASA Astrophysics Data System (ADS)

    Tuz, Vladimir R.; Fesenko, Volodymyr I.; Fedorin, Illia V.; Sun, Hong-Bo; Han, Wei

    2017-03-01

    It is demonstrated that the effect of coexistence of bulk and surface polaritons within the same frequency band and the wavevector space can be achieved in a magnetic-semiconductor superlattice, providing a conscious choice of characteristic resonant frequencies and material fractions of the structure's underlying components as well as geometry of the external static magnetic field. The study is based on the effective medium theory, which is involved to calculate dispersion characteristics of the long-wavelength electromagnetic modes of ordinary and extraordinary bulk polaritons, and hybrid surface polaritons with dominant longitudinal component of either magnetic (HE) or electric (EH) field derived via averaged expressions with respect to the effective constitutive parameters of the superlattice.

  17. Magnetic susceptibility of Dirac fermions, Bi-Sb alloys, interacting Bloch fermions, dilute nonmagnetic alloys, and Kondo alloys

    NASA Astrophysics Data System (ADS)

    Buot, Felix A.; Otadoy, Roland E. S.; Rivero, Karla B.

    2017-03-01

    Wide ranging interest in Dirac Hamiltonian is due to the emergence of novel materials, namely, graphene, topological insulators and superconductors, the newly-discovered Weyl semimetals, and still actively-sought after Majorana fermions in real materials. We give a brief review of the relativistic Dirac quantum mechanics and its impact in the developments of modern physics. The quantum band dynamics of Dirac Hamiltonian is crucial in resolving the giant diamagnetism of bismuth and Bi-Sb alloys. Quantitative agreement of the theory with the experiments on Bi-Sb alloys has been achieved, and physically meaningful contributions to the diamagnetism has been identified. We also treat relativistic Dirac fermion as an interband dynamics in uniform magnetic fields. For the interacting Bloch electrons, the role of translation symmetry for calculating the magnetic susceptibility avoids any approximation to second order in the field. The expressions for magnetic susceptibility of dilute nonmagnetic alloys give a firm theoretical foundation of the empirical formulas used in fitting experimental results. The unified treatment of all the above calculations is based on the lattice Weyl-Wigner formulation of discrete phase-space quantum mechanics. For completeness, the magnetic susceptibility of Kondo alloys is also given since Dirac fermions in conduction band and magnetic impurities exhibit Kondo effect.

  18. Unraveling the temperature and voltage dependence of magnetic field effects in organic semiconductors

    NASA Astrophysics Data System (ADS)

    Janssen, Paul; Wouters, Steinar H. W.; Cox, Matthijs; Koopmans, Bert

    2013-11-01

    In recent years, it was discovered that the current through an organic semiconductor, sandwiched between two non-magnetic electrodes, can be changed significantly by applying a small magnetic field. This surprisingly large magnetoresistance effect, often dubbed as organic magnetoresistance (OMAR), has puzzled the young field of organic spintronics during the last decade. Here, we present a detailed study on the voltage and temperature dependence of OMAR, aiming to unravel the lineshapes of the magnetic field effects and thereby gain a deeper fundamental understanding of the underlying microscopic mechanism. Using a full quantitative analysis of the lineshapes, we are able to extract all linewidth parameters and the voltage and temperature dependencies are explained with a recently proposed trion mechanism. Moreover, explicit microscopic simulations show a qualitative agreement to the experimental results.

  19. Magnetic order in a frustrated two-dimensional atom lattice at a semiconductor surface.

    PubMed

    Li, Gang; Höpfner, Philipp; Schäfer, Jörg; Blumenstein, Christian; Meyer, Sebastian; Bostwick, Aaron; Rotenberg, Eli; Claessen, Ralph; Hanke, Werner

    2013-01-01

    Two-dimensional electron systems, as exploited for device applications, can lose their conducting properties because of local Coulomb repulsion, leading to a Mott-insulating state. In triangular geometries, any concomitant antiferromagnetic spin ordering can be prevented by geometric frustration, spurring speculations about 'melted' phases, known as spin liquid. Here we show that for a realization of a triangular electron system by epitaxial atom adsorption on a semiconductor, such spin disorder, however, does not appear. Our study compares the electron excitation spectra obtained from theoretical simulations of the correlated electron lattice with data from high-resolution photoemission. We find that an unusual row-wise antiferromagnetic spin alignment occurs that is reflected in the photoemission spectra as characteristic 'shadow bands' induced by the spin pattern. The magnetic order in a frustrated lattice of otherwise non-magnetic components emerges from longer-range electron hopping between the atoms. This finding can offer new ways of controlling magnetism on surfaces.

  20. Semiconductor crystal growth in crossed electric and magnetic fields: Center Director's Discretionary Fund

    NASA Technical Reports Server (NTRS)

    Mazuruk, K.; Volz, M. P.

    1996-01-01

    A unique growth cell was designed in which crossed electric and magnetic fields could be separately or simultaneously applied during semiconductor crystal growth. A thermocouple was inserted into an InSb melt inside the growth cell to examine the temperature response of the fluid to applied electromagnetic fields. A static magnetic field suppressed time-dependent convection when a destabilizing thermal field was applied. The simultaneous application of electric and magnetic fields resulted in forced convection in the melt. The InSb ingots grown in the cell were polycrystalline. An InGaSb crystal, 0.5 cm in diameter and 23-cm long, was grown without electromagnetic fields applied. The axial composition results indicated that complete mixing in the melt occurred for this large aspect ratio.

  1. Models of Mass Transport During Microgravity Crystal Growth of Alloyed Semiconductors in a Magnetic Field

    NASA Technical Reports Server (NTRS)

    Ma, Nancy

    2003-01-01

    Alloyed semiconductor crystals, such as germanium-silicon (GeSi) and various II-VI alloyed crystals, are extremely important for optoelectronic devices. Currently, high-quality crystals of GeSi and of II-VI alloys can be grown by epitaxial processes, but the time required to grow a certain amount of single crystal is roughly 1,000 times longer than the time required for Bridgman growth from a melt. Recent rapid advances in optoelectronics have led to a great demand for more and larger crystals with fewer dislocations and other microdefects and with more uniform and controllable compositions. Currently, alloyed crystals grown by bulk methods have unacceptable levels of segregation in the composition of the crystal. Alloyed crystals are being grown by the Bridgman process in space in order to develop successful bulk-growth methods, with the hope that the technology will be equally successful on earth. Unfortunately some crystals grown in space still have unacceptable segregation, for example, due to residual accelerations. The application of a weak magnetic field during crystal growth in space may eliminate the undesirable segregation. Understanding and improving the bulk growth of alloyed semiconductors in microgravity is critically important. The purpose of this grant to to develop models of the unsteady species transport during the bulk growth of alloyed semiconductor crystals in the presence of a magnetic field in microgravity. The research supports experiments being conducted in the High Magnetic Field Solidification Facility at Marshall Space Flight Center (MSFC) and future experiments on the International Space Station.

  2. Hydrogenated bilayer wurtzite SiC nanofilms: a two-dimensional bipolar magnetic semiconductor material.

    PubMed

    Yuan, Long; Li, Zhenyu; Yang, Jinlong

    2013-01-14

    Recently, a new kind of spintronics material, bipolar magnetic semiconductors (BMS), has been proposed. The spin polarization of BMS can be conveniently controlled by a gate voltage, which makes it very attractive in device engineering. Now, the main challenge is finding more BMS materials. In this article, we propose that hydrogenated wurtzite SiC nanofilm is a two-dimensional BMS material. Its BMS character is very robust under the effect of strain, substrate or even a strong electric field. The proposed two-dimensional BMS material paves the way to use this promising new material in an integrated circuit.

  3. Magnetic filter apparatus and method for generating cold plasma in semiconductor processing

    DOEpatents

    Vella, M.C.

    1996-08-13

    Disclosed herein is a system and method for providing a plasma flood having a low electron temperature to a semiconductor target region during an ion implantation process. The plasma generator providing the plasma is coupled to a magnetic filter which allows ions and low energy electrons to pass therethrough while retaining captive the primary or high energy electrons. The ions and low energy electrons form a ``cold plasma`` which is diffused in the region of the process surface while the ion implantation process takes place. 15 figs.

  4. Structural Disorder and Magnetism in the Spin-Gapless Semiconductor CoFeCrAl

    DTIC Science & Technology

    2016-08-24

    semiconductor CoFeCrAl into a half- metallic ferrimagnet and increases the half- metallic band gap by 0.12 eV. Compared CoFeCrAl, the moment of...magnets. However, Si addition improves the degree of Heusler ordering and changes the electronic structure from a SGS to a half- metal with increased...total moment per relaxed unit cell are 1.71 µB (I), –0.60 µB (II), and 1.05 µB (III). None of the disordered CoFeCrAl structures is energetically

  5. Material degradation of liquid organic semiconductors analyzed by nuclear magnetic resonance spectroscopy

    SciTech Connect

    Fukushima, Tatsuya; Yamamoto, Junichi; Fukuchi, Masashi; Kaji, Hironori; Hirata, Shuzo; Jung, Heo Hyo; Adachi, Chihaya; Hirata, Osamu; Shibano, Yuki

    2015-08-15

    Liquid organic light-emitting diodes (liquid OLEDs) are unique devices consisting only of liquid organic semiconductors in the active layer, and the device performances have been investigated recently. However, the device degradation, especially, the origin has been unknown. In this study, we show that material degradation occurs in liquid OLEDs, whose active layer is composed of carbazole with an ethylene glycol chain. Nuclear magnetic resonance (NMR) experiments clearly exhibit that the dimerization reaction of carbazole moiety occurs in the liquid OLEDs during driving the devices. In contrast, cleavages of the ethylene glycol chain are not detected within experimental error. The dimerization reaction is considered to be related to the device degradation.

  6. Exciting transition metal doped dilute magnetic thin films: MgO:Er and ZnO:Er

    NASA Astrophysics Data System (ADS)

    Ćakıcı, T.; Sarıtaş, S.; Muǧlu, G. Merhan; Yıldırım, M.

    2017-02-01

    Erbium doped MgO and doped ZnO thin films have reasonably important properties applications in spintronic devices. These films were synthesized on glass substrates by Chemical Spray Pyrolysis (CSP) method. In the literature there has been almost no report on preparation of MgO:Er dilute magnetic thin films by means of CSP. Because doped thin films show different magnetic behaviors, depending upon the type of magnetic material ions, concentration of them, synthesis route and experimental conditions, synthesized MgO:Er and ZnO:Er films were compared to thin film properties. Optical analyses of the synthesized thin films were examined spectral absorption and transmittance measurements by UV-Vis double beam spectrophotometer technique. Structural analysis of the thin films was examined by using XRD, Raman Analysis, FE-SEM, EDX and AFM techniques. Also, magnetic properties of the MgO:Er and ZnO:Er films were investigated by vibrating sample magnetometer (VSM) which show that diamagnetic behavior of the MgO:Er thin film and ferromagnetic (FM) behavior of the ZnO:Er film were is formed.

  7. In-plane magnetic anisotropy and temperature dependence of switching field in (Ga, Mn) as ferromagnetic semiconductors.

    PubMed

    Kamara, S; Terki, F; Dumas, R; Dehbaoui, M; Sadowski, J; Galéra, R M; Tran, Q-H; Charar, S

    2012-06-01

    We explore the magnetic anisotropy of GaMnAs ferromagnetic semiconductor by Planar Hall Effect (PHE) measurements. Using low magnitude of applied magnetic field (i.e., when the magnitude H is smaller than both cubic Hc and uniaxial Hu anisotropy field), we have observed various shapes of applied magnetic field direction dependence of Planar Hall Resistance (PHR). In particular, in two regions of temperature. At T < Tc/2, the "square-shape" signal and at T > Tc/2 the "zigzag-shape" signal of PHR. They reflect different magnetic anisotropy and provide information about magnetization reversal process in GaMnAs ferromagnetic semiconductor. The theoretical model calculation of PHR based on the free energy density reproduces well the experimental data. We report also the temperature dependence of anisotropy constants and magnetization orientations. The transition of easy axis from biaxial to uniaxiale axes has been observed and confirmed by SQUID measurements.

  8. On a few properties of very dilute matter frozen in space magnetic fields

    NASA Astrophysics Data System (ADS)

    Berdichevsky, D. B.; Schefers, K.

    2014-12-01

    For a case study, the flux-rope (FR) that passed Earth on June 2, 2014(1) (see also listing of magnetic clouds and their properties in the Wind SC MFI science team site at http://wind.gsfc.nasa.gov/mfi/mag_cloud_S1.html), we proceed to interpret plasma and magnetic field observations in the context of MHD. The observations used are 3s average interplanetary magnetic field (Wind/MFI instrument) and 3s plasma (Wind/SWE instruments) data(2). After identifying the observed correlation between electron density, temperature and pressure in the plasma frame of reference we proceed to establish the existence of a relationship between these plasma observables with the magnetic field pressure. By assuming ideal MHD conditions to be valid we proceed to confirm that the medium is diamagnetic, as is to be expected for the MHD state of matter and magnetic field which is assumed to be a superconducting medium. Additionally we infer the presence of magnetization work, as well as a few other constitutive properties of this state of matter. 1 Berdichevsky D. B., R. P. Lepping, and C. J. Farrugia, Geometric considerations of the evolution of magnetic flux ropes, Phys. Rev. E67, doi:10.1103/PhysRevE.036405. Lepping R. P. et al, A summary of Wind magnetic clouds for years 1995 - 2003: model-fitted parameters, associated errors and classifications, Ann. Geophysicae, 24, 215-245, 2006.2006 2 Ogilvie, K. W., et al, SWE, A comprehensive plasma instrument for the Wind spacecraft, Space Sci. Rev., 71, 55 - 77, 1995; Lepping R. P., et al , The Wind Magnetic Field Investigation, Space Sci. Rev., 71, 207 - 229, 1995.

  9. Spin-orbit dilution effects on the magnetism of frustrated spinel Ge(Co1-xMgx)2O4

    NASA Astrophysics Data System (ADS)

    Agata, Ryotaro; Takita, Shota; Ishikawa, Takashi; Watanabe, Tadataka

    2015-03-01

    We investigated magnetic properties of spinel oxides Ge(Co1-xMgx)2O4 with x = 0 ~ 0.5 to study the spin-orbit dilution effects on the magnetism of spin-orbit frustrated spinel GeCo2O4. We discovered that the magnetic moment per single Co2+ ion is decreased with increasing nonmagnetic Mg2+ concentration, which indicates the spin-orbit decoupling caused by the spin-orbit dilution. Additionally, small-amount substitution of Mg2+ for Co2+ causes the rapid increase of the positive Weiss temperature indicating the enhancement of ferromagnetic interactions, while the Mg2+ substitution suppresses the antiferromagnetic ordering resulting in the appearance of spin glass behavior. The present results suggest that the spin-orbit dilution causes the spin-orbit decoupling and the reinforcement of ferromagnetic frustration in GeCo2O4.

  10. Rheology of a very dilute magnetic suspension with micro-structures of nanoparticles

    NASA Astrophysics Data System (ADS)

    Cunha, Francisco Ricardo; Rosa, Adriano Possebon; Dias, Nuno Jorge

    2016-01-01

    The main objective of this present paper is to measure the apparent viscosity of a magnetic suspension in the presence of particle agglomerates of different sizes for several applied magnetic fields, shear rates and particle volume fractions. A secondary goal is to investigate suspension microstructure transition, when subjected to a magnetic field. We show that an employed like virial expansion of two empirical coefficients based only on the experimental data gives a good quantitative description of the magnetorheological suspension effective viscosity up to particle volume fraction less than 0.01. The observed shear rate dependence viscosity is a direct consequence of the stretching, breaking particle structures of different sizes and shapes formed by the action of magnetic attractive force between the polarized particles as observed previously in the context of dense ferrofluids. We have identified even in the limit of a very small particle volume fraction a strong non-linear behavior of the examined suspension due to formation of suspended blobs-like aggregates of different sizes and anisotropic chains of particles. These structures are induced by the presence of an external magnetic field and particle-particle magnetic interactions. A histogram of the structure size distribution is also examined. The results of this paper are important to those who are interested on the magnetorheological suspensions.

  11. Magnetism in alkali-metal-doped wurtzite semiconductor materials controlled by strain engineering

    NASA Astrophysics Data System (ADS)

    Guo, J. H.; Li, T. H.; Liu, L. Z.; Hu, F. R.

    2016-09-01

    The study of the magnetism and optical properties of semiconductor materials by defect engineering has attracted much attention because of their potential uses in spintronic and optoelectronic devices. In this paper, first-principle calculations discloses that cationic vacancy formation energy of the doped wurtzite materials can be sharply decreased due to alkali metal dopants and shows that their magnetic properties strongly depend on defect and doping concentration. This effect can be ascribed to the volume change induced by foreign elements doped into the host system and atomic population's difference. The symmetric deformation induced by biaxial strain can further regulate this behavior. Our results suggest that the formation of cationic vacancy can be tailored by strain engineering and dopants incorporation.

  12. Weak magnetic field superconductor resistive sensors in comparison with semiconductor and magnetoresistive sensors

    NASA Astrophysics Data System (ADS)

    Ichkitidze, L. P.

    2007-09-01

    Weak magnetic field superconductor resistive sensors are fabricated and compared with various known types of the magnetoresistive and semiconductor sensors. The magnetically sensitive characteristics of the sensors are analyzed at room temperature and liquid-nitrogen temperature. Their resolution by the magnetic field δ B and by the magnetic flux δ ϕ are unsatisfactory, namely, δ B ⩾ 3 nT and δ ϕ ⩾ 10 ϕ0. Thick films of the ceramic HTS material of the composition Bi-2223 were fabricated, for which the magnetic sensitivity S ∼ 44 V/T, δ B ∼ 2 nT, and δ ϕ ∼ 3 ϕ0 are realized. It is shown that the value of S of the film increases significantly due to the size effect. This effect is taken into account, and the expected characteristics are presented, namely, S ⩾ 1000 V/T, δ B ⩽ 0.01 nT, δ ϕ ⩽ 0.002 ϕ0, and the dynamic measurement range ⩾150 dB.

  13. Magnetization studies of II-VI semiconductor columnar quantum dots with type-II band alignment

    NASA Astrophysics Data System (ADS)

    Eginligil, M.; Sellers, I. R.; McCombe, B. D.; Chou, W.-C.; Kuskovsky, I. L.

    2009-03-01

    We report SQUID magnetization measurements of MBE-grown type-II, II-VI semiconductor quantum dot (QD) samples, with and without Mn incorporation. In all samples, the easy axis is out-of-plane, possibly due to columnar QD formation that arises from strain interaction between adjacent thin dot-containing layers. In addition, both types of QDs display a non-zero spontaneous magnetic ordering at 300 K. One set of samples consists of five-layers of (Zn,Mn)Te/ZnSe with a nominal (Zn,Mn)Te thickness of 3 nm, and ZnSe spacer thickness of 5 nm and 20 nm. These magnetic QD samples show magnetization vs. temperature behavior that can be interpreted in terms of two independent FM phases characterized by transition temperatures TC1 < TC2. A sample containing no Mn consists of 130 ZnTe/ZnSe layers, which forms Zn(Se,Te) QD layers separated by ZnSe spacers. Evidence of ferromagnetism is also seen in this structure, but the spontaneous magnetization is much weaker. For this sample only one phase is seen with TC above 300 K. Results will be discussed in terms of magneto-polaronic effects and defect-level induced ferromagnetism.

  14. Magnetism in the p-type Monolayer II-VI semiconductors SrS and SrSe

    PubMed Central

    Lin, Heng-Fu; Lau, Woon-Ming; Zhao, Jijun

    2017-01-01

    Using density functional theory calculations, we study the electronic and magnetic properties of the p-type monolayer II-VI semiconductors SrX (X = S,Se). The pristine SrS and SrSe monolayers are large band gap semiconductor with a very flat band in the top valence band. Upon injecting hole uniformly, ferromagnetism emerges in those system in a large range of hole density. By varying hole density, the systems also show complicated phases transition among nonmagnetic semiconductor, half metal, magnetic semiconductor, and nonmagnetic metal. Furthermore, after introducing p-type dopants in SrS and SrSe via substitutionary inserting P (or As) dopants at the S (or Se) sites, local magnetic moments are formed around the substitutional sites. The local magnetic moments are stable with the ferromagnetic order with appreciable Curie temperature. The ferromagnetism originates from the instability of the electronic states in SrS and SrSe with the large density of states at the valence band edge, which demonstrates a useful strategy for realizing the ferromagnetism in the two dimensional semiconductors. PMID:28378761

  15. Itinerant ferromagnetism in a Fermi gas with contact interaction: Magnetic properties in a dilute Hubbard model

    SciTech Connect

    Chang Chiachen; Zhang Shiwei; Ceperley, David M.

    2010-12-15

    Ground-state properties of the repulsive Hubbard model on a cubic lattice are investigated by means of the auxiliary-field quantum Monte Carlo method. We focus on low-density systems with varying on-site interaction U/t, as a model relevant to recent experiments on itinerant ferromagnetism in a dilute Fermi gas with contact interaction. Twist-average boundary conditions are used to eliminate open-shell effects and large lattice sizes are studied to reduce finite-size effects. The sign problem is controlled by a generalized constrained path approximation. We find no ferromagnetic phase transition in this model. The ground-state correlations are consistent with those of a paramagnetic Fermi liquid.

  16. Contrasting magnetism in dilute and supersaturated cobalt-fullerene mixture films

    NASA Astrophysics Data System (ADS)

    Lavrentiev, V.; Stupakov, A.; Pokorný, J.; Lavrentieva, I.; Vacik, J.; Dejneka, A.; Barchuk, M.; Čapková, P.

    2015-08-01

    The combination of cobalt with nanocarbons promises hybrid nanostructures that are ideal for the development of memory storage and spin-transfer electronics. Here, we report a dramatic effect of composition on the magnetic properties of the Co x C60 mixtures, whose nanostructure was organized upon simultaneous deposition and sequential exposure to air. We assert a critical change in the mixture’s organization yielding either the composite nanostructure as array of the Co/CoO core-shell nanoparticles (NPs) in the C60-based matrix at a high content of Co (a supersaturated mixture or SSM) or a coexistence of fcc-C60 and CoaC60 fulleride when the Co content x is lower than some critical value {{x}\\text{c}} (an ultradilute mixture or UDM). Magnetization of the SSM composite exhibits a superparamagnetic effect caused by the small Co/CoO NPs. Similar magnetization of the UDM with x=0.7 revealed a stable ferromagnetism and evidenced the formation of a magnetic Co2C60 fulleride. Phase composition in the UDM and SSM films was verified with the XRD and Raman spectra. The UDM and SSM films reveal great difference in content of the remaining oxygen which implies easy diffusion of O2 molecules within the C60-based phases and their splitting at the Co NP surface followed by formation of CoO shells. The results obtained indicate controlled access to a variety of promising Co-C60 magnetic nanostructures.

  17. Magnetic field effects in organic semiconductors and their applications in displays

    NASA Astrophysics Data System (ADS)

    Veeraraghavan, Govindarajan

    Organic semiconductors have been widely expected to replace inorganic semiconductors in the field of display electronics since the advent of organic light emitting diodes (OLEDs). Organic pi-conjugated materials have also been used to manufacture photovoltaic cells and field-effect transistors. Recent years have seen a surge in interest in the magnetotransport properties of these materials because they show great potential for such applications as magnetic field sensors and spintronics devices. In this thesis, I experimentally characterize a large magnetoresistance effect, which was recently discovered at the University of Iowa and was dubbed organic magnetoresistance (OMAR). We focus on two materials that show particularly great promise; one a macromolecular polymer called polyfluorene, the other a prototypical small molecule called Alq3. Building on the work of a prior student; in this thesis I report on the magnetic field dependence of current, photocurrent and electroluminescence in OLEDs made from Alq3 and polyfluorene. We provide a comprehensive overview of all these three types of magnetic field effects. In particular, we show that they are all caused by the same mechanism, in contrast to some claims by others. To the best of our knowledge, the mechanism causing OMAR and the other magnetic field effects is currently not known with certainty. Moreover, we show that experiments in bipolar, electroluminescent devices do not allow determination whether the mechanism acts on the carrier density or carrier mobility. This is a crucial gap in knowledge since it makes any attempt of explaining it ambiguous. As a remedy, we performed magnetoresistance measurements in hole-only polyfluorene devices and show that the mechanism acts on the carrier mobility rather than carrier recombination. We present an outline of a possible explanation which will be studied in more detail in another thesis. In my thesis I focus on possible applications of OMAR. I present the design

  18. Ferromagnetism in diluted magnetic Zn-Co-doped CeO2-δ

    NASA Astrophysics Data System (ADS)

    Santos, T. S.; Folly, W. S. D.; Macêdo, M. A.

    2012-08-01

    Several oxides doped with transition metals can be used in spintronics devices due to their conductive and magnetic properties at room temperature. In this work, samples of Ce1-2xZnxCoxO2-δ were obtained by an alternative sol-gel proteic process for x=0.01, 0.05 and 0.1. The structural properties of samples were analyzed by XRD and Raman spectroscopy. Magnetization measurements revealed a ferromagnetic behavior at room temperature probably induced by oxygen vacancies.

  19. Technical note: Evaluating nuclear magnetic resonance spectroscopy for determining body composition in Holstein dairy calves using deuterium oxide dilution methods.

    PubMed

    Chapman, C E; Wilkinson, P Stone; Murphy, M R; Erickson, P S

    2017-04-01

    Deuterium oxide (D2O) dilution methods have been used to assess body composition in live animals. Estimated body water content can be used to predict body fat and protein, and thus, the amount of energy reserves. It is an alternative method to direct chemical analysis and considered a noninvasive technique that is economical and repeatable. Deuterium oxide use is considered easy, safe, and accurate; however, the traditional methods of analyzing D2O are expensive, tedious, and time consuming. The objective of this study was to evaluate the potential for using nuclear magnetic resonance spectroscopy (NMR) to determine body composition in Holstein dairy heifers. Nuclear magnetic resonance is less expensive and requires minutes to calculate the percentage of D2O in the blood. This study used 24 newborn dairy heifer calves blocked by birth and randomly assigned to 1 of 3 treatments: (1) 446 g dry matter (DM) of a conventional milk replacer (MR) [CON; 20% crude protein (CP), 20% fat], (2) 669 g DM of a moderately high protein MR (MOD; 26% CP, 18% fat), or (3) 892 g DM of a moderately high protein MR (aggressive, AGG; 26% CP, 18% fat). All calves had free-choice access to starter and water. Both MR and starter were medicated with decoquinate. During weaning (d 43 to 49), the morning MR feeding ceased. On d 50, all MR feedings ended but starter and water intakes were continuously recorded until d 56. When calves were 50 d of age, a baseline blood sample was taken followed by injection of 300 mg of D2O/kg of body weight in sterile physiological saline (0.9%). The syringes containing the D2O in physiological saline were weighed before and after administration to record the actual dose of D2O injected gravimetrically. After injection, the D2O was allowed to equilibrate with body water for 1 h. Six blood samples were taken over 6 d (1/d) at 1630 h to estimate the dilution of the tracer. The plasma was aspirated and stored at -20°C until further D2O analysis. This new method

  20. Accurate measurements of electric quadrupole hyperfine interactions of very dilute spins in magnetic solids

    NASA Astrophysics Data System (ADS)

    Chaplin, D. H.; Hutchison, W. D.; Prandolini, M. J.; Bowden, G. J.

    1998-01-01

    The application of double and triple resonance techniques to enhance signals in quadrupole interaction — nuclear magnetic resonance on oriented nuclei spectroscopy, is illustrated for the antiferromagnet ( 54Mn)MnBr 2-4H 2O. Unusual shifts of the quadrupolar split, higher order, ν ±2, ±1 subresonance, comparable to the NMRON linewidth, are observed and explained.

  1. The effects of Peltier marking on semiconductor growth in a magnetic field

    NASA Astrophysics Data System (ADS)

    Sellers, Cheryl Casper

    This research represents a model for three dimensional semiconductor growth in a vertical Bridgman process within an externally applied magnetic field with the additional effects of Peltier marking. The magnetic field is strong enough that inertial effects can be neglected and that viscous effects are confined to boundary layers. The objective of this research is a first step in the development of a method to accurately predict the distribution of dopants and species in the melt after a current pulse with a given duration and strength, with a given magnetic field and with a given crystal-melt interface shape. The first model involves an asymptotic solution to provide physical clarification of the flow. In both models the crystal/melt interface is modeled as fr=3r2 where 3≪1 . The first model incorporates a variable, a which ranges from 0.25 to 1.0. The second model involves an analytical solution with an arbitrary Ha and a≪1 . These models show the how the azimuthal velocity varies with increasing Ha and how the stream function varies in the meridional problem. This gives insight into how the dopant is mixed during the crystal growth process. The results demonstrate that current pulses with relatively weak magnetic fields and modest interface curvature can lead to very strong mixing in the melt.

  2. Strong magnetic coupling in a magnetically dilute f-electron insulator: A dysprosium boron-cluster compound

    NASA Astrophysics Data System (ADS)

    Mori, T.; Sahara, R.; Kawazoe, Y.; Yubuta, K.; Shishido, T.; Grin, Y.

    2013-05-01

    Unexpectedly strong magnetic coupling is observed in boride insulators containing the B12 icosahedra as a structural unit. We have successfully synthesized Dy0.74B22C2N, which takes the RB22C2N-type crystal structure. The Dy phase was previously thought to not be possible to form. Spin glass-like behavior was observed with a broad peak in the zero field cooled (ZFC) magnetic susceptibility at T ˜ 44 K, while a large divergence for ZFC and field cooled (FC) curves is observed. The Curie-Weiss constant is determined to be θ =-43.9 K, and this system is indicated to have the strongest magnetic coupling ever observed for any rare earth boride insulator. Electronic structure and chemical bonding calculations were also made. Conventional mechanisms for f-electron magnetism cannot explain the strong coupling observed, which further indicates that the B12 icosahedra is functioning as a novel mediator of magnetic interaction.

  3. Magnetism at the Interface of Magnetic Oxide and Nonmagnetic Semiconductor Quantum Dots.

    PubMed

    Saha, Avijit; Viswanatha, Ranjani

    2017-03-28

    Engineering interfaces specifically in quantum dot (QD) heterostructures provide several prospects for developing multifunctional building block materials. Precise control over internal structure by chemical synthesis offers a combination of different properties in QDs and allows us to study their fundamental properties, depending on their structure. Herein, we studied the interface of magnetic/nonmagnetic Fe3O4/CdS QD heterostructures. In this work, we demonstrate the decrease in the size of the magnetic core due to annealing at high temperature by the decrease in saturation magnetization and blocking temperature. Furthermore, surprisingly, in a prominently optically active and magnetically inactive material such as CdS, we observe the presence of substantial exchange bias in spite of the nonmagnetic nature of CdS QDs. The presence of exchange bias was proven by the increase in magnetic anisotropy as well as the presence of exchange bias field (HE) during the field-cooled magnetic measurements. This exchange coupling was eventually traced to the in situ formation of a thin antiferromagnetic FeS layer at the interface. This is verified by the study of Fe local structure using X-ray absorption fine structure spectroscopy, demonstrating the importance of interface engineering in QDs.

  4. CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES: Spin Polaron in a Diluted Parabolic Magnetic Quantum Well

    NASA Astrophysics Data System (ADS)

    Peter, A. John; Zheng, Jin-Liang

    2010-04-01

    Theoretical investigations of spin polaron in a quantum well in the spin doping superlattice systems Cd1 - xin Mn1 - xout Te/Cd1 - xout Mnxout Te are presented in this paper. A variational procedure within the effective mass approximation is employed in the presence of magnetic held to calculate the donor ionization energy. Spin polaronic shifts are estimated using a mean held theory. The results show that the donor binding energy (i) Increases with the reduction in well sizes (ii) Decreases with the magnetic held is increased for a given well width (iii) Increases to a maximum value at 90 Å and then decreases as the size of the well increases beyond 90 Å and (iv) Spin polaronic shifts to the donor binding energy not only decrease in a magnetic held but also with the well width. The results are compared with the existing available literature.

  5. Fabrication and characterization of a diluted magnetic semiconducting TM co-doped Al:ZnO (TM=Co, Ni) thin films by sol-gel spin coating method.

    PubMed

    Siddheswaran, R; Mangalaraja, R V; Tijerina, Eduardo P; Menchaca, J-Luis; Meléndrez, M F; Avila, Ricardo E; Jeyanthi, C Esther; Gomez, M E

    2013-04-01

    Effect of transition metal oxides (TM=Co and Ni) co-doping on the crystallinity, surface morphology, grain growth and magnetic properties of nanostructure Al:ZnO thin films has been studied for diluted magnetic semiconductor applications. Al:ZnO thin films were fabricated by sol-gel spin coating on p-type Si (100) substrates. Fabrication of hexagonal wurtzite TM co-doped Al:ZnO thin films having thickness 2μm was successfully achieved. The Raman spectra of the TM co-doped Al:ZnO thin films showed a broad vibrational mode in the range 520-540cm(-1) due to crystal defects created co-doping elements in the ZnO host lattice. Scanning electron microscopy (SEM) revealed that the films are composed of uniform size, polycrystalline dense ZnO particles with defect free, smooth surfaces. The surface roughness was further verified with atomic force microscopy (AFM). The energy dispersive X-ray spectroscopic analysis (EDX) confirmed the stoichiometric compositions of the TM co-doped Al:ZnO films. The magnetic measurements exhibited that the Co, Al:ZnO and Ni, Al:ZnO thin films were ferromagnetic at room temperature.

  6. Luminescence, Plasmonic and Magnetic Properties of Doped Semiconductor Nanocrystals: Current Developments and Future Prospects.

    PubMed

    Pradhan, Narayan; Adhikari, Samrat Das; Nag, Angshuman; Sarma, D D

    2017-02-02

    Introducing few atoms of impurities or dopants in semiconductor nanocrystals can drastically alter the existing or even introduce new properties. For example, mid-gap states created by doping tremendously affect photocatalytic activities and surface controlled redox reactions, generate new emission centres, show thermometric optical switching, make suitable FRET donors by enhancing the excited state lifetime and also create localized surface plasmon resonance induced low energy absorption. In addition, researchers have more recently started focusing their attention on doped nanocrystals as an important and alternative material for solar energy conversion in order to meet the current demand for renewable energy. Moreover, electrical as well as magnetic properties of the host are also strongly altered on doping. These dopant-induced beneficial changes in material properties suggest that doped nanocrystals with proper selections of dopant-host pairs may be helpful for generating designer materials for a wide range of current technological needs. Such exciting properties related to various aspects of doping a variety of semiconductor nanocrystals are summarized and reported in this mini review.

  7. Magnetic order in a frustrated two-dimensional atom lattice at a semiconductor surface

    NASA Astrophysics Data System (ADS)

    Li, Gang; Höpfner, Philipp; Schäfer, Jörg; Blumenstein, Christian; Meyer, Sebastian; Bostwick, Aaron; Rotenberg, Eli; Claessen, Ralph; Hanke, Werner

    2013-03-01

    Two-dimensional electron systems, as exploited for device applications, can lose their conducting properties because of local Coulomb repulsion, leading to a Mott-insulating state. In triangular geometries, any concomitant antiferromagnetic spin ordering can be prevented by geometric frustration, spurring speculations about ‘melted’ phases, known as spin liquid. Here we show that for a realization of a triangular electron system by epitaxial atom adsorption on a semiconductor, such spin disorder, however, does not appear. Our study compares the electron excitation spectra obtained from theoretical simulations of the correlated electron lattice with data from high-resolution photoemission. We find that an unusual row-wise antiferromagnetic spin alignment occurs that is reflected in the photoemission spectra as characteristic ‘shadow bands’ induced by the spin pattern. The magnetic order in a frustrated lattice of otherwise non-magnetic components emerges from longer-range electron hopping between the atoms. This finding can offer new ways of controlling magnetism on surfaces.

  8. Large anomalous Hall effect in a silicon-based magnetic semiconductor.

    PubMed

    Manyala, Ncholu; Sidis, Yvan; DiTusa, John F; Aeppli, Gabriel; Young, David P; Fisk, Zachary

    2004-04-01

    Magnetic semiconductors are attracting great interest because of their potential use for spintronics, a new technology that merges electronics with the manipulation of conduction electron spins. (GaMn)As and (GaMn)N have recently emerged as the most popular materials for this new technology, and although their Curie temperatures are rising towards room temperature, these materials can only be fabricated in thin-film form, are heavily defective, and are not obviously compatible with Si. We show here that it is productive to consider transition metal monosilicides as potential alternatives. In particular, we report the discovery that the bulk metallic magnets derived from doping the narrow-gap insulator FeSi with Co share the very high anomalous Hall conductance of (GaMn)As, while displaying Curie temperatures as high as 53 K. Our work opens up a new arena for spintronics, involving a bulk material based only on transition metals and Si, which displays large magnetic-field effects on its electrical properties.

  9. Towards a new class of heavy ion doped magnetic semiconductors for room temperature applications

    PubMed Central

    Lee, Juwon; Subramaniam, Nagarajan Ganapathi; Agnieszka Kowalik, Iwona; Nisar, Jawad; Lee, Jaechul; Kwon, Younghae; Lee, Jaechoon; Kang, Taewon; Peng, Xiangyang; Arvanitis, Dimitri; Ahuja, Rajeev

    2015-01-01

    The article presents, using Bi doped ZnO, an example of a heavy ion doped oxide semiconductor, highlighting a novel p-symmetry interaction of the electronic states to stabilize ferromagnetism. The study includes both ab initio theory and experiments, which yield clear evidence for above room temperature ferromagnetism. ZnBixO1−x thin films are grown using the pulsed laser deposition technique. The room temperature ferromagnetism finds its origin in the holes introduced by the Bi doping and the p-p coupling between Bi and the host atoms. A sizeable magnetic moment is measured by means of x-ray magnetic circular dichroism at the O K-edge, probing directly the spin polarization of the O(2p) states. This result is in agreement with the theoretical predictions and inductive magnetometry measurements. Ab initio calculations of the electronic and magnetic structure of ZnBixO1−x at various doping levels allow to trace the origin of the ferromagnetic character of this material. It appears, that the spin-orbit energy of the heavy ion Bi stabilizes the ferromagnetic phase. Thus, ZnBixO1−x doped with a heavy non-ferromagnetic element, such as Bi, is a credible example of a candidate material for a new class of compounds for spintronics applications, based on the spin polarization of the p states. PMID:26592564

  10. Towards a new class of heavy ion doped magnetic semiconductors for room temperature applications

    NASA Astrophysics Data System (ADS)

    Lee, Juwon; Subramaniam, Nagarajan Ganapathi; Agnieszka Kowalik, Iwona; Nisar, Jawad; Lee, Jaechul; Kwon, Younghae; Lee, Jaechoon; Kang, Taewon; Peng, Xiangyang; Arvanitis, Dimitri; Ahuja, Rajeev

    2015-11-01

    The article presents, using Bi doped ZnO, an example of a heavy ion doped oxide semiconductor, highlighting a novel p-symmetry interaction of the electronic states to stabilize ferromagnetism. The study includes both ab initio theory and experiments, which yield clear evidence for above room temperature ferromagnetism. ZnBixO1-x thin films are grown using the pulsed laser deposition technique. The room temperature ferromagnetism finds its origin in the holes introduced by the Bi doping and the p-p coupling between Bi and the host atoms. A sizeable magnetic moment is measured by means of x-ray magnetic circular dichroism at the O K-edge, probing directly the spin polarization of the O(2p) states. This result is in agreement with the theoretical predictions and inductive magnetometry measurements. Ab initio calculations of the electronic and magnetic structure of ZnBixO1-x at various doping levels allow to trace the origin of the ferromagnetic character of this material. It appears, that the spin-orbit energy of the heavy ion Bi stabilizes the ferromagnetic phase. Thus, ZnBixO1-x doped with a heavy non-ferromagnetic element, such as Bi, is a credible example of a candidate material for a new class of compounds for spintronics applications, based on the spin polarization of the p states.

  11. Electric field control of spin splitting in III-V semiconductor quantum dots without magnetic field

    NASA Astrophysics Data System (ADS)

    Prabhakar, Sanjay; Melnik, Roderick

    2015-10-01

    We provide an alternative means of electric field control for spin manipulation in the absence of magnetic fields by transporting quantum dots adiabatically in the plane of two-dimensional electron gas. We show that the spin splitting energy of moving quantum dots is possible due to the presence of quasi-Hamiltonian that might be implemented to make the next generation spintronic devices of post CMOS technology. Such spin splitting energy is highly dependent on the material properties of semiconductor. It turns out that this energy is in the range of meV and can be further enhanced with increasing pulse frequency. In particular, we show that quantum oscillations in phonon mediated spin-flip behaviors can be observed. We also confirm that no oscillations in spin-flip behaviors can be observed for the pure Rashba or pure Dresselhaus cases.

  12. Terahertz radiation induced chaotic electron transport in semiconductor superlattices with a tilted magnetic field

    SciTech Connect

    Wang, C. Wang, F.; Cao, J. C.

    2014-09-01

    Chaotic electron transport in semiconductor superlattice induced by terahertz electric field that is superimposed on a dc electric field along the superlattice axis are studied using the semiclassical motion equations including the effect of dissipation. A magnetic field that is tilted relative to the superlattice axis is also applied to the system. Numerical simulation shows that electrons in superlattice miniband exhibit complicate nonlinear oscillating modes with the influence of terahertz radiation. Transitions between frequency-locking and chaos via pattern forming bifurcations are observed with the varying of terahertz amplitude. It is found that the chaotic regions gradually contract as the dissipation increases. We attribute the appearance of complicate nonlinear oscillation in superlattice to the interaction between terahertz radiation and internal cooperative oscillating mode relative to Bloch oscillation and cyclotron oscillation.

  13. Nonlinear optics response of semiconductor quantum wells under high magnetic fields

    SciTech Connect

    Chemla, D.S.

    1993-07-01

    Recent investigations on the nonlinear optical response of semiconductor quantum wells in a strong perpendicular magnetic field, H, are reviewed. After some introductory material the evolution of the linear optical properties of GaAs QW`s as a function of H is discussed; an examination is made of how the magneto-excitons (MX) extrapolate continuously between quasi-2D QW excitons (X) when H = 0, and pairs of Landau levels (LL) when H {yields} {infinity}. Next, femtosecond time resolved investigations of their nonlinear optical response are presented; the evolution of MX-MX interactions with increasing H is stressed. Finally, how, as the dimensionality is reduced by application of H, the number of scattering channels is limited and relaxation of electron-hole pairs is affected. How nonlinear optical spectroscopy can be exploited to access the relaxation of angular momentum within magneto-excitons is also discussed.

  14. First-principles calculations of Seebeck coefficients in a magnetic semiconductor CuFeS2

    NASA Astrophysics Data System (ADS)

    Takaki, Hirokazu; Kobayashi, Kazuaki; Shimono, Masato; Kobayashi, Nobuhiko; Hirose, Kenji; Tsujii, Naohito; Mori, Takao

    2017-02-01

    We analyze the Seebeck coefficients of a magnetic semiconductor CuFeS2 using first-principles calculation methods based on density functional theory. The calculated temperature dependence of the Seebeck coefficient in the antiferromagnetic phase reproduces a distinctive behavior in a bulk CuFeS2, such as a peak structure at a low temperature and weak temperature dependence around room temperature. In doped systems, almost linear temperature dependence appears. Despite not including any effect beyond the conventional spin density functional theory in our calculations, the calculated results agree qualitatively with the experimental results. These agreements indicate that the behavior of the Seebeck coefficients in CuFeS2 is mainly determined by its electronic structure.

  15. Structural and Magnetic Properties of Dilute Ca²⁺ Doped Iron Oxide Nanoparticles.

    PubMed

    Samar Layek; Rout, K; Mohapatra, M; Anand, S; Verma, H C

    2016-01-01

    Undoped and calcium substituted hematite (α-Fe₂O₃) nanoparticles are synthesized by surfactant-directed co-precipitation and post annealing method. The annealed nanoparticles were found to be in single phase in nature and crystallize in the rhombohedral structure with space group R3c as confirmed by Rietveld refinement of the X-ray diffraction (XRD) data. Average crystallite sizes are calculated to be 20 to 30 nm and 50 to 60 nm for the nanoparticles annealed at 400 and 600 °C respectively. Mössbauer spectra for all the nanoparticles could be fitted with a sextet corresponding to the single magnetic state of the iron atoms in its Fe³⁺ state in the hematite matrix. The FTIR and Raman spectra of all the samples correspond to specific modes of α-Fe₂O₃. UV-Vis spectra of annealed samples showed broad peaks in the range of 525-630 nm resulting from spin-forbidden ligand field transition together with the spin-flip transition among the 2t₂g states. The estimated band gap energies were in the range of 1.6 to 1.9 eV which are much lower than the reported values for nano hematite. From the room temperature magnetic hysteresis loop measurements, weak ferromagnetic behavior is observed in all undoped and Ca²⁺ doped hematite samples. Morin temperature (T(M)) is calculated to be 257 and 237 K for 1.45% doped samples with particle size 54 and 27 nm respectively. The sample with Ca content of 1.45 wt% when annealed at 400 °C showed that the particles were of different shapes which included both quasi spherical and rod shaped. On annealing the same sample at 600 °C, the nanorods collapsed to form bigger spherical and ellipsoidal particles.

  16. Magnetically Suspended Linear Pulse Motor for Semiconductor Wafer Transfer in Vacuum Chamber

    NASA Technical Reports Server (NTRS)

    Moriyama, Shin-Ichi; Hiraki, Naoji; Watanabe, Katsuhide; Kanemitsu, Yoichi

    1996-01-01

    This paper describes a magnetically suspended linear pulse motor for a semiconductor wafer transfer robot in a vacuum chamber. The motor can drive a wafer transfer arm horizontally without mechanical contact. In the construction of the magnetic suspension system, four pairs of linear magnetic bearings for the lift control are used for the guidance control as well. This approach allows us to make the whole motor compact in size and light in weight. The tested motor consists of a double-sided stator and a transfer arm with a width of 50 mm and a total length of 700 mm. The arm, like a ladder in shape, is designed as the floating element with a tooth width of 4 mm (a tooth pitch of 8 mm). The mover mass is limited to about 1.6 kg by adopting such an arm structure, and the ratio of thrust to mover mass reaches to 3.2 N/kg under a broad air gap (1 mm) between the stator teeth and the mover teeth. The performance testing was carried out with a transfer distance less than 450 mm and a transfer speed less than 560 mm/s. The attitude of the arm was well controlled by the linear magnetic bearings with a combined use, and consequently the repeatability on the positioning of the arm reached to about 2 micron. In addition, the positioning accuracy was improved up to about 30 micron through a compensation of the 128-step wave current which was used for the micro-step drive with a step increment of 62.5 micron.

  17. Remote sensing of sample temperatures in nuclear magnetic resonance using photoluminescence of semiconductor quantum dots.

    PubMed

    Tycko, Robert

    2014-07-01

    Knowledge of sample temperatures during nuclear magnetic resonance (NMR) measurements is important for acquisition of optimal NMR data and proper interpretation of the data. Sample temperatures can be difficult to measure accurately for a variety of reasons, especially because it is generally not possible to make direct contact to the NMR sample during the measurements. Here I show that sample temperatures during magic-angle spinning (MAS) NMR measurements can be determined from temperature-dependent photoluminescence signals of semiconductor quantum dots that are deposited in a thin film on the outer surface of the MAS rotor, using a simple optical fiber-based setup to excite and collect photoluminescence. The accuracy and precision of such temperature measurements can be better than ±5K over a temperature range that extends from approximately 50K (-223°C) to well above 310K (37°C). Importantly, quantum dot photoluminescence can be monitored continuously while NMR measurements are in progress. While this technique is likely to be particularly valuable in low-temperature MAS NMR experiments, including experiments involving dynamic nuclear polarization, it may also be useful in high-temperature MAS NMR and other forms of magnetic resonance.

  18. Multifunctional semiconductor micro-Hall devices for magnetic, electric, and photo-detection

    SciTech Connect

    Gilbertson, A. M.; Cohen, L. F.; Sadeghi, Hatef; Lambert, C. J.; Panchal, V.; Kazakova, O.; Solin, S. A.

    2015-12-07

    We report the real-space voltage response of InSb/AlInSb micro-Hall devices to local photo-excitation, electric, and magnetic fields at room temperature using scanning probe microscopy. We show that the ultrafast generation of localised photocarriers results in conductance perturbations analogous to those produced by local electric fields. Experimental results are in good agreement with tight-binding transport calculations in the diffusive regime. The magnetic, photo, and charge sensitivity of a 2 μm wide probe are evaluated at a 10 μA bias current in the Johnson noise limit (valid at measurement frequencies > 10 kHz) to be, respectively, 500 nT/√Hz; 20 pW/√Hz (λ = 635 nm) comparable to commercial photoconductive detectors; and 0.05 e/√Hz comparable to that of single electron transistors. These results demonstrate the remarkably versatile sensing attributes of simple semiconductor micro-Hall devices that can be applied to a host of imaging and sensing applications.

  19. Remote sensing of sample temperatures in nuclear magnetic resonance using photoluminescence of semiconductor quantum dots

    PubMed Central

    Tycko, Robert

    2014-01-01

    Knowledge of sample temperatures during nuclear magnetic resonance (NMR) measurements is important for acquisition of optimal NMR data and proper interpretation of the data. Sample temperatures can be difficult to measure accurately for a variety of reasons, especially because it is generally not possible to make direct contact to the NMR sample during the measurements. Here I show that sample temperatures during magic-angle spinning (MAS) NMR measurements can be determined from temperature-dependent photoluminescence signals of semiconductor quantum dots that are deposited in a thin film on the outer surface of the MAS rotor, using a simple optical fiber-based setup to excite and collect photoluminescence. The accuracy and precision of such temperature measurements can be better than ±5 K over a temperature range that extends from approximately 50 K (−223° C) to well above 310 K (37° C). Importantly, quantum dot photoluminescence can be monitored continuously while NMR measurements are in progress. While this technique is likely to be particularly valuable in low-temperature MAS NMR experiments, including experiments involving dynamic nuclear polarization, it may also be useful in high-temperature MAS NMR and other forms of magnetic resonance. PMID:24859817

  20. Multifunctional semiconductor micro-Hall devices for magnetic, electric, and photo-detection

    NASA Astrophysics Data System (ADS)

    Gilbertson, A. M.; Sadeghi, Hatef; Panchal, V.; Kazakova, O.; Lambert, C. J.; Solin, S. A.; Cohen, L. F.

    2015-12-01

    We report the real-space voltage response of InSb/AlInSb micro-Hall devices to local photo-excitation, electric, and magnetic fields at room temperature using scanning probe microscopy. We show that the ultrafast generation of localised photocarriers results in conductance perturbations analogous to those produced by local electric fields. Experimental results are in good agreement with tight-binding transport calculations in the diffusive regime. The magnetic, photo, and charge sensitivity of a 2 μm wide probe are evaluated at a 10 μA bias current in the Johnson noise limit (valid at measurement frequencies > 10 kHz) to be, respectively, 500 nT/√Hz; 20 pW/√Hz (λ = 635 nm) comparable to commercial photoconductive detectors; and 0.05 e/√Hz comparable to that of single electron transistors. These results demonstrate the remarkably versatile sensing attributes of simple semiconductor micro-Hall devices that can be applied to a host of imaging and sensing applications.

  1. The influence of a Pb surfactant on the magnetism of dilute Si1-xMnx films

    NASA Astrophysics Data System (ADS)

    Kahwaji, S.; Bowman, W.; Robertson, M. D.; Monchesky, T. L.

    2013-02-01

    We investigated the effect of Pb surfactant on the growth mode and magnetism of dilute Si1-xMnx thin films grown by molecular beam epitaxy. We find that the nanocolumns that form in Pb-free samples are paramagnetic with a small saturation moment that drops with increasing Mn concentration. On the contrary, samples grown with 2 monolayers of Pb contain MnSi1.7 nanorods that lie in the plane of the films. Although the saturation moment of these samples also drops rapidly with increasing Mn concentration, it is as high as 0.65 μB/Mn. At the lowest Mn concentration (x = 0.5%), the samples grown with a Pb surfactant exhibit two ferromagnetic transitions at the Curie temperatures TC1≈40 K and TC2>400 K. While the transition at TC1 is consistent with the Curie temperature of bulk MnSi1.7 crystals, TC2 is possibly due to a second phase resulting from Mn in the Si matrix.

  2. Absence of localized-spin magnetic scattering in the narrow-gap semiconductor FeSb2

    SciTech Connect

    Zaliznyak, Igor; Savici, Andrei T; Garlea, Vasile O; Hu, Rongwei; Petrovic, C

    2011-01-01

    We report inelastic neutron scattering measurements aimed at investigating the origin of the temperature-induced paramagnetism in the narrow-gap semiconductor FeSb2. We find that inelastic response for energies up to 60 meV and at temperatures ~ 4.2 K, ~ 300 K and ~ 550 K is consistent with scattering by the lattice phonon excitations. Hence, we observe no evidence for a well-defined magnetic excitation corresponding to transitions between the non-magnetic ground state and states of magnetic multiplet in the localized spin picture. However, a broad magnetic scattering continuum in the 15 meV to 35 meV energy range is not ruled out by our data. Our findings make description in terms of the localized Fe magnetic states unlikely and suggest that paramagnetic susceptibility of itinerant electrons is at the origin of the temperature-induced magnetism in FeSb2.

  3. Zinc oxide based diluted magnetic semiconductor nanoparticles: Synthesis by laser ablation in liquids, microstructural and optical properties

    SciTech Connect

    Savchuk, Andriy I.; Stolyarchuk, Ihor D.; Savchuk, Oleksandr A.; Makoviy, Vitaliy V.; Smolinsky, Mykhailo M.; Shporta, Oleksandra A.; Perrone, Alessio

    2013-12-04

    Nanoparticles of ZnO and ZnO doped with transition metals (Mn, Co) were synthesized by laser ablation in liquid medium. Scanning electron microscopy (SEM) showed formation of nanostructures with different shapes. Atomic force microscopy (AFM) gives information about surface morphology of the formed nanostructures. Absorption edge of ZnO, ZnO:Mn and ZnO:Co colloidal nanoparticles exhibits blue shift due to confinement effect. In photoluminescence spectra three peaks are attributed to the band-edge transitions and defect states. The Faraday rotation in ZnO:Mn nanoparticles gives evidence for paramagnetic behavior at room temperature.

  4. Electron - polar acoustical phonon interactions in nitride based diluted magnetic semiconductor quantum well via hot electron magnetotransport

    SciTech Connect

    Pandya, Ankur; Shinde, Satyam; Jha, Prafulla K.

    2015-05-15

    In this paper the hot electron transport properties like carrier energy and momentum scattering rates and electron energy loss rates are calculated via interactions of electrons with polar acoustical phonons for Mn doped BN quantum well in BN nanosheets via piezoelectric scattering and deformation potential mechanisms at low temperatures with high electric field. Electron energy loss rate increases with the electric field. It is observed that at low temperatures and for low electric field the phonon absorption is taking place whereas, for sufficient large electric field, phonon emission takes place. Under the piezoelectric (polar acoustical phonon) scattering mechanism, the carrier scattering rate decreases with the reduction of electric field at low temperatures wherein, the scattering rate variation with electric field is limited by a specific temperature beyond which there is no any impact of electric field on such scattering.

  5. Generation of spin polarized currents with coherent trapping in magnetic semiconductors

    NASA Astrophysics Data System (ADS)

    Pereira, Pedro H.; Bezerra, Anibal T.; Farinas, Paulo F.; Maialle, Marcelo Z.; Degani, Marcos H.; Studart, Nelson

    2017-04-01

    A semiconductor heterostructure consisting of two quantum wells, one of them magnetically doped, is proposed for the generation of spin currents by two lasers tuned at the resonances formed between two lowest energy states (1 and 2) and the continuum (3), which are set by design to be in a Λ like configuration. By numerically simulating the proposed structure under the action of the laser fields, we are able to observe the formation of a quasi-dark state near the resonance. The structure’s design has been idealized as to place state 2 in the magnetically doped quantum-well, where a constant magnetic field breaks the electronic spin degeneracy, leading to the giant Zeeman splitting. This ensures that only one of the electronic spins is driven into a dark resonance, thus blocking it from escaping the system. The other spin is free to escape, so that a spin polarized photocurrent is generated. The polarization can be switched by changing the frequency of the controlling laser. Since this kind of trapping is based on quantum interference, the switching times are expected to be fast. In our simulation, we do not simplify the structure down to level modeling, rather we simulate the full structure under time dependent oscillating laser fields and then identify the signatures that indicate a three-level like behavior. We based our search for the structure on real doping parameters found in real materials used in the literature, however the idea relies on the potential profiles studied, and the presence of the giant splitting, regardless of the underlying material that may be used.

  6. Temperature and magnetic field tunability of composite metamaterials containing spherical semiconductor particles in far-infrared and terahertz regimes

    NASA Astrophysics Data System (ADS)

    Panahpour, Ali; Latifi, Hamid

    2010-12-01

    The effect of temperature and dc magnetic field variations on effective electromagnetic parameters of metamaterials (MTMs) containing spherical semiconductor particles is studied theoretically. The effect of temperature is taken into account through its influence on semiconductor carrier density and mobility. The effect of dc magnetic field is included using an extension of the Mie theory, describing the interaction of a plane wave with a gyrotropic sphere. The effective parameters such as relative permittivity and permeability are calculated by proper application of the Maxwell Garnett (MG) theory and its extensions to quasi-static condition and multi-phase structures. Based on these theories, the temperature and dc magnetic field tunability of three different MTM structures is investigated. First a single phase medium is considered which contains spherical semiconductor particles of one kind, randomly dispersed in a dielectric host. Then two multi-phase structures containing (a) two kinds of spherical semiconductor particles or (b) spherical particles with core-shell topology are investigated. The two multi-phase MTM structures can exhibit negative index of refraction in far-infrared spectral region. The measure of the temperature and dc magnetic field tunability of effective parameters such as relative permittivity and refractive index of the structures is evaluated and it is shown specifically that the real part of refractive index can be tuned to get negative, zero or positive values in far-IR or THz regimes, but the imaginary part of the index and the Figure of Merit (FOM) are also quite sensitive to the temperature and magnetic field variations. The tunable MTMs can find new applications in THz devices such as switches, tunable mirrors, isolators, converters, polarizers, filters and phase shifters.

  7. Optically Detected Magnetic Resonance Studies on π-conjugated semiconductor systems

    SciTech Connect

    Chen, Ying

    2011-01-01

    Optically Detected Magnetic Resonance (ODMR) techniques were used to investigate the dynamics of excitons and charge carriers in π-conjugated organic semiconductors. Degradation behavior of the negative spin-1/2 electroluminescence-detected magnetic resonance (ELDMR) was observed in Alq3 devices. The increase in the resonance amplitude implies an increasing bipolaron formation during degradation, which might be the result of growth of charge traps in the device. The same behavior of the negative spin-1/2 ELDMR was observed in 2wt% Rubrene doped Tris(8-hydroxyquinolinato)aluminium (Alq3) devices. However, with increasing injection current, a positive spin-1/2 ELDMR, together with positive spin 1 triplet powder patterns at ΔmS=±1 and ΔmS=±2, emerges. Due to the similarities in the frequency dependences of single and double modulated ELDMR and the photoluminescence-detected magnetic resonance (PLDMR) results in poly[2-methoxy-5-(2 -ethyl-hexyloxy)-1,4-phenyl ene vinylene] (MEH-PPV) films, the mechanism for this positive spin-1/2 ELDMR was assigned to enhanced triplet-polaron quenching under resonance conditions. The ELDMR in rubrene doped Alq3 devices provides a path to investigate charge distribution in the device under operational conditions. Combining the results of several devices with different carrier blocking properties and the results from transient EL, it was concluded trions not only exist near buffer layer but also exist in the electron transport layer. This TPQ model can also be used to explain the positive spin-1/2 PLDMR in poly(3-hexylthiophene) (P3HT) films at low temperature and in MEH-PPV films at various temperatures up to room temperature. Through quantitative analysis, TE-polaron quenching (TPQ) model is shown having the ability to explain most behaviors of the positive spin-1/2 resonance. Photocurrent detected magnetic resonance (PCDMR) studies on MEH-PPV devices revealed a novel transient resonance signal. The signal

  8. Magnetic ground state of an individual Fe2+ ion in strained semiconductor nanostructure

    PubMed Central

    Smoleński, T.; Kazimierczuk, T.; Kobak, J.; Goryca, M.; Golnik, A.; Kossacki, P.; Pacuski, W.

    2016-01-01

    Single impurities with nonzero spin and multiple ground states offer a degree of freedom that can be utilized to store the quantum information. However, Fe2+ dopant is known for having a single nondegenerate ground state in the bulk host semiconductors and thus is of little use for spintronic applications. Here we show that the well-established picture of Fe2+ spin configuration can be modified by subjecting the Fe2+ ion to high strain, for example, produced by lattice mismatched epitaxial nanostructures. Our analysis reveals that high strain induces qualitative change in the ion energy spectrum and results in nearly doubly degenerate ground state with spin projection Sz=±2. We provide an experimental proof of this concept using a new system: a strained epitaxial quantum dot containing individual Fe2+ ion. Magnetic character of the Fe2+ ground state in a CdSe/ZnSe dot is revealed in photoluminescence experiments by exploiting a coupling between a confined exciton and the single-iron impurity. We also demonstrate that the Fe2+ spin can be oriented by spin-polarized excitons, which opens a possibility of using it as an optically controllable two-level system free of nuclear spin fluctuations. PMID:26818580

  9. Magnetic ground state of an individual Fe2+ ion in strained semiconductor nanostructure

    NASA Astrophysics Data System (ADS)

    Smoleński, T.; Kazimierczuk, T.; Kobak, J.; Goryca, M.; Golnik, A.; Kossacki, P.; Pacuski, W.

    2016-01-01

    Single impurities with nonzero spin and multiple ground states offer a degree of freedom that can be utilized to store the quantum information. However, Fe2+ dopant is known for having a single nondegenerate ground state in the bulk host semiconductors and thus is of little use for spintronic applications. Here we show that the well-established picture of Fe2+ spin configuration can be modified by subjecting the Fe2+ ion to high strain, for example, produced by lattice mismatched epitaxial nanostructures. Our analysis reveals that high strain induces qualitative change in the ion energy spectrum and results in nearly doubly degenerate ground state with spin projection Sz=+/-2. We provide an experimental proof of this concept using a new system: a strained epitaxial quantum dot containing individual Fe2+ ion. Magnetic character of the Fe2+ ground state in a CdSe/ZnSe dot is revealed in photoluminescence experiments by exploiting a coupling between a confined exciton and the single-iron impurity. We also demonstrate that the Fe2+ spin can be oriented by spin-polarized excitons, which opens a possibility of using it as an optically controllable two-level system free of nuclear spin fluctuations.

  10. Nanogranular metallic Fe oxygen deficient TiO2-δ composite films: a room temperature, highly carrier polarized magnetic semiconductor

    NASA Astrophysics Data System (ADS)

    Yoon, S. D.; Widom, A.; Miller, K. E.; McHenry, M. E.; Vittoria, C.; Harris, V. G.

    2008-05-01

    Nanogranular metallic iron (Fe) and titanium dioxide (TiO2-δ) were sequentially deposited on (100) lanthanum aluminate (LaAlO3) substrates in a low oxygen chamber pressure using a pulsed laser ablation deposition (PLD) technique. By sequential deposition, ≈10 nm diameter metallic Fe spherical grains were suspended within a TiO2-δ matrix. The films show ferromagnetic behavior with a saturation magnetization of 3100 G at room temperature. Our estimate of the saturation magnetization based on the size and distribution of the Fe spheres agreed with the measured value. The film composite structure was characterized as a p-type magnetic semiconductor at 300 K with a carrier density of the order of ≈1022 cm-3. The hole carriers were excited at the interface between the nanogranular Fe and TiO2-δ matrix, similar to holes excited in the metal/n-type semiconductor interface commonly observed in metal-oxide-semiconductor (MOS) devices. From the large anomalous Hall effect measured in these films, we observed that the holes at the interface were strongly spin polarized. Structure and magnetotransport properties suggested that these PLD films have potential spintronics applications.

  11. High temperature magnetic order in Zn1-x Mn x SnSb2+MnSb nanocomposite ferromagnetic semiconductors

    NASA Astrophysics Data System (ADS)

    Kilanski, L.; Górska, M.; Ślawska-Waniewska, A.; Lewińska, S.; Szymczak, R.; Dynowska, E.; Podgórni, A.; Dobrowolski, W.; Ralević, U.; Gajić, R.; Romčević, N.; Fedorchenko, I. V.; Marenkin, S. F.

    2016-08-01

    We present studies of structural, magnetic, and electrical properties of Zn1-x Mn x SnSb2+MnSb nanocomposite ferromagnetic semiconductors with the average Mn-content, \\bar{x} , changing from 0.027 up to 0.138. The magnetic force microscope imaging done at room temperature shows the presence of a strong signal coming from MnSb clusters. Magnetic properties show the paramagnet-ferromagnet transition with the Curie temperature, T C, equal to about 522 K and the cluster-glass behavior with the transition temperature, T CG, equal to about 465 K, both related to MnSb clusters. The magnetotransport studies show that all investigated samples are p-type semiconductors with high hole concentration, p, changing from 1021 to 1022 cm-3. A large increase in the resistivity as a function of the magnetic field is observed at T  <  10 K and small magnetic fields, |B|<100 mT, for all the studied samples with a maximum amplitude of the magnetoresistance about 460% at T  =  1.4 K. The large increase in the resistivity is most probably caused by the appearance of the superconducting state in the samples at T  <  4.3 K.

  12. Effects of crossed electric and magnetic fields on the interband optical absorption spectra of variably spaced semiconductor superlattices

    NASA Astrophysics Data System (ADS)

    Zuleta, J. N.; Reyes-Gómez, E.

    2016-05-01

    The interband optical absorption spectra of a GaAs-Ga1-xAlxAs variably spaced semiconductor superlattice under crossed in-plane magnetic and growth-direction applied electric fields are theoretically investigated. The electronic structure, transition strengths and interband absorption coefficients are analyzed within the weak and strong magnetic-field regimes. A dramatic quenching of the absorption coefficient is observed, in the weak magnetic-field regime, as the applied electric field is increased, in good agreement with previous experimental measurements performed in a similar system under growth-direction applied electric fields. A decrease of the resonant tunneling in the superlattice is also theoretically obtained in the strong magnetic-field regime. Moreover, in this case, we found an interband absorption coefficient weakly dependent on the applied electric field. Present theoretical results suggest that an in-plane magnetic field may be used to tune the optical properties of variably spaced semiconductor superlattices, with possible future applications in solar cells and magneto-optical devices.

  13. Simultaneous monitoring of singlet and triplet exciton variations in solid organic semiconductors driven by an external static magnetic field

    SciTech Connect

    Ding, Baofu Alameh, Kamal

    2014-07-07

    The research field of organic spintronics has remarkably and rapidly become a promising research area for delivering a range of high-performance devices, such as magnetic-field sensors, spin valves, and magnetically modulated organic light emitting devices (OLEDs). Plenty of microscopic physical and chemical models based on exciton or charge interactions have been proposed to explain organic magneto-optoelectronic phenomena. However, the simultaneous observation of singlet- and triplet-exciton variations in an external magnetic field is still unfeasible, preventing a thorough theoretical description of the spin dynamics in organic semiconductors. Here, we show that we can simultaneously observe variations of singlet excitons and triplet excitons in an external magnetic field, by designing an OLED structure employing a singlet-exciton filtering and detection layer in conjunction with a separate triplet-exciton detection layer. This OLED structure enables the observation of a Lorentzian and a non-Lorentzian line-shape magnetoresponse for singlet excitons and triplet excitons, respectively.

  14. Magnetic properties and critical behavior of the pure and diluted two-dimensional weak ferromagnet (CH3NH3)2Mn1-xCdxCl4

    NASA Astrophysics Data System (ADS)

    Paduan-Filho, A.; Becerra, C. C.

    2002-05-01

    The compound (CH3NH3)2MnCl4 had for a long time been considered a good example of a quasi-two-dimensional Heisenberg antiferromagnet, however, it is a weak ferromagnet with a nearly quadratic layer structure. In this work we measure the magnetization of (CH3NH3)2MnCl4 and the diluted with cadmium compound (CH3NH3)2Mn0.95Cd0.05Cl4. The Néel temperature for the pure sample was determined as TN=44.75 K and a weak-ferromagnetic moment was observed within the nearly quadratic layer (perpendicular to the easy axis). From the measured weak magnetic moment, we estimate a canting angle for the sublattices magnetizations θ˜0.07° from the easy axis. The overall temperature dependence of the weak magnetic moment is the same as that previously measured for the sublattice magnetization in neutron diffraction experiments (as expected). However, close to TN the critical exponent β of the magnetization changes from β1=0.17±0.02 [0.01<(1-T/TN)<0.1] to β2=0.23±0.02 [0.001<(1-T/TN)<0.01] in the immediate neighborhood of TN. In the diluted compound (TN=41.0±0.5 K) and below 0.9TN the magnetization due to the weak component follows the same behavior found for the pure system but closer to TN an almost linear dependence of the magnetization with temperature is observed.

  15. Coherent control and detection of spin qubits in semiconductor with magnetic field engineering

    NASA Astrophysics Data System (ADS)

    Tokura, Yasuhiro

    2012-02-01

    Electrical control and detection of the spin qubits in semiconductor quantum dots (QDs) are among the major rapidly progressing fields for possible implementation of scalable quantum information processing. Coherent control of one-[1-3] and two-[4,5] spin qubits by electrical means had been demonstrated with various approaches. We have used an engineered magnetic field structure realized with proximal micro-magnets to transduce the spin and charge degrees of freedom and to selectively address one of the two spins [3]. We have demonstrated an all-electrical two-qubit gate consisting of single-spin rotations and interdot spin exchange in double QDs. A partially entangled output state is obtained by the application of the two-qubit gate to an initial, uncorrelated state. Our calculations taking into account of the nuclear spin fluctuation show the degree of entanglement. Non-uniform magnetic field also enables spin selective photon-assisted tunneling in double QDs, which then constitutes non-demolition spin read-out system in combination with a near-by charge detector [6]. [4pt] In collaboration with R. Brunner, Inst. of Phys., Montanuniversitaet Leoben, 8700, Austria, M. Pioro-Ladrière, D'ep. de Phys., Universit'e de Sherbrooke, Sherbrooke, Qu'ebec, J1K-2R1, Canada, T. Kubo, Y. -S. Shin, T. Obata, and S. Tarucha, ICORP-JST and Dep. of Appl. Phys., Univ. of Tokyo, Hongo, Bunkyo-ku, Tokyo, 113-8656, Japan.[4pt] [1] F. H. Koppens, et al., Nature 442, 766 (2006).[0pt] [2] K. C. Nowack, et al., Science 318, 1430 (2007).[0pt] [3] M. Pioro-Ladrière, et al., Nature Physics 4, 776 (2008).[0pt] [4] J. R. Petta, et al., Science 309, 2180 (2005).[0pt] [5] R. Brunner, et al., Phys. Rev. Lett. 107, 146801 (2011).[0pt] [6] Y. -S. Shin, et al., Phys. Rev. Lett. 104, 046802 (2010).

  16. Interfacial Properties of Organic Semiconductor-Inorganic Magnetic Oxide Hybrid Spintronic Systems Fabricated Using Pulsed Laser Deposition.

    PubMed

    Majumdar, Sayani; Grochowska, Katarzyna; Sawczak, Miroslaw; Śliwiński, Gerard; Huhtinen, Hannu; Dahl, Johnny; Tuominen, Marjukka; Laukkanen, Pekka; Majumdar, Himadri S

    2015-10-14

    We report fabrication of a hybrid organic semiconductor-inorganic complex oxide interface of rubrene and La0.67Sr0.33MnO3 (LSMO) for spintronic devices using pulsed laser deposition (PLD) and investigate the interface structure and chemical bonding-dependent magnetic properties. Our results demonstrate that with proper control of growth parameters, thin films of organic semiconductor rubrene can be deposited without any damage to the molecular structure. Rubrene, a widely used organic semiconductor with high charge-carrier mobility and spin diffusion length, when grown as thin films on amorphous and crystalline substrates such as SiO2-glass, indium-tin oxide (ITO), and LSMO by PLD at room temperature and a laser fluence of 0.19 J/cm2, reveals amorphous structure. The Raman spectra verify the signatures of both Ag and Bg Raman active modes of rubrene molecules. X-ray reflectivity measurements indicate a well-defined interface formation between surface-treated LSMO and rubrene, whereas X-ray photoelectron spectra indicate the signature of hybridization of the electronic states at this interface. Magnetic measurements show that the ferromagnetic property of the rubrene-LSMO interface improves by >230% compared to the pristine LSMO surface due to this proposed hybridization. Intentional disruption of the direct contact between LSMO and rubrene by insertion of a dielectric AlOx layer results in an observably decreased ferromagnetism. These experimental results demonstrate that by controlling the interface formation between organic semiconductor and half-metallic oxide thin films, it is possible to engineer the interface spin polarization properties. Results also confirm that by using PLD for consecutive growth of different layers, contamination-free interfaces can be obtained, and this finding is significant for the well-controlled and reproducible design of spin-polarized interfaces for future hybrid spintronics devices.

  17. Berry phase mechanism of the anomalous Hall effect in a disordered two-dimensional magnetic semiconductor structure

    PubMed Central

    Oveshnikov, L. N.; Kulbachinskii, V. A.; Davydov, A. B.; Aronzon, B. A.; Rozhansky, I. V.; Averkiev, N. S.; Kugel, K. I.; Tripathi, V.

    2015-01-01

    The anomalous Hall effect (AHE) arises from the interplay of spin-orbit interactions and ferromagnetic order and is a potentially useful probe of electron spin polarization, especially in nanoscale systems where direct measurement is not feasible. While AHE is rather well-understood in metallic ferromagnets, much less is known about the relevance of different physical mechanisms governing AHE in insulators. As ferromagnetic insulators, but not metals, lend themselves to gate-control of electron spin polarization, understanding AHE in the insulating state is valuable from the point of view of spintronic applications. Among the mechanisms proposed in the literature for AHE in insulators, the one related to a geometric (Berry) phase effect has been elusive in past studies. The recent discovery of quantized AHE in magnetically doped topological insulators - essentially a Berry phase effect - provides strong additional motivation to undertake more careful search for geometric phase effects in AHE in the magnetic semiconductors. Here we report our experiments on the temperature and magnetic field dependences of AHE in insulating, strongly-disordered two-dimensional Mn delta-doped semiconductor heterostructures in the hopping regime. In particular, it is shown that at sufficiently low temperatures, the mechanism of AHE related to the Berry phase is favoured. PMID:26596472

  18. Berry phase mechanism of the anomalous Hall effect in a disordered two-dimensional magnetic semiconductor structure.

    DOE PAGES

    Oveshnikov, L. N.; Kulbachinskii, V. A.; Davydov, A. B.; ...

    2015-11-24

    In this study, the anomalous Hall effect (AHE) arises from the interplay of spin-orbit interactions and ferromagnetic order and is a potentially useful probe of electron spin polarization, especially in nanoscale systems where direct measurement is not feasible. While AHE is rather well-understood in metallic ferromagnets, much less is known about the relevance of different physical mechanisms governing AHE in insulators. As ferromagnetic insulators, but not metals, lend themselves to gatecontrol of electron spin polarization, understanding AHE in the insulating state is valuable from the point of view of spintronic applications. Among the mechanisms proposed in the literature for AHEmore » in insulators, the one related to a geometric (Berry) phase effect has been elusive in past studies. The recent discovery of quantized AHE in magnetically doped topological insulators - essentially a Berry phase effect - provides strong additional motivation to undertake more careful search for geometric phase effects in AHE in the magnetic semiconductors. Here we report our experiments on the temperature and magnetic field dependences of AHE in insulating, strongly-disordered two-dimensional Mn delta-doped semiconductor heterostructures in the hopping regime. In particular, it is shown that at sufficiently low temperatures, the mechanism of AHE related to the Berry phase is favoured.« less

  19. Berry phase mechanism of the anomalous Hall effect in a disordered two-dimensional magnetic semiconductor structure.

    SciTech Connect

    Oveshnikov, L. N.; Kulbachinskii, V. A.; Davydov, A. B.; Aronzon, B. A.; Rozhansky, I. V.; Averkiev, N. S.; Kugel, K. I.; Tripathi, V.

    2015-11-24

    In this study, the anomalous Hall effect (AHE) arises from the interplay of spin-orbit interactions and ferromagnetic order and is a potentially useful probe of electron spin polarization, especially in nanoscale systems where direct measurement is not feasible. While AHE is rather well-understood in metallic ferromagnets, much less is known about the relevance of different physical mechanisms governing AHE in insulators. As ferromagnetic insulators, but not metals, lend themselves to gatecontrol of electron spin polarization, understanding AHE in the insulating state is valuable from the point of view of spintronic applications. Among the mechanisms proposed in the literature for AHE in insulators, the one related to a geometric (Berry) phase effect has been elusive in past studies. The recent discovery of quantized AHE in magnetically doped topological insulators - essentially a Berry phase effect - provides strong additional motivation to undertake more careful search for geometric phase effects in AHE in the magnetic semiconductors. Here we report our experiments on the temperature and magnetic field dependences of AHE in insulating, strongly-disordered two-dimensional Mn delta-doped semiconductor heterostructures in the hopping regime. In particular, it is shown that at sufficiently low temperatures, the mechanism of AHE related to the Berry phase is favoured.

  20. The role of iron(II) dilution in the magnetic and photomagnetic properties of the series [Fe(x)Zn(1-x)(bpp)₂](NCSe)₂.

    PubMed

    Baldé, Chérif; Desplanches, Cédric; Le Gac, Fréderic; Guionneau, Philippe; Létard, Jean-François

    2014-06-07

    The effects of metal dilution on the spin-crossover behavior of iron(II) in the mixed crystal series [Fe(x)Zn(1-x)(bpp)2](NCSe)2 (bpp = 2,6-bis(pyrazol-3-yl)pyridine) have been studied using magnetic susceptibility, photomagnetism and diffuse reflectivity measurements. For each mixed-crystal system, the thermal spin transition temperature, T(1/2), and the relaxation temperature of the photo-induced high-spin state, T(LIESST), have been systematically determined. It appears that T(1/2) decreases with the metal dilution while T(LIESST) remains unchanged. Dilution also tends to decrease the hysteresis width and smooth the transition curves. These effects were discussed first qualitatively and then quantitatively on the basis of a kinetic study governing the photo-induced back conversion taking into account the relative sizes of Zn(II) and Fe(II) ions. Interestingly, single crystals were obtained for [Fe(0.6)Zn(0.4)(bpp)2](NCSe)2 allowing the X-ray diffraction crystal-structure determination.

  1. High accuracy NMR chemical shift corrected for bulk magnetization as a tool for structural elucidation of microemulsions. Part 2 - Anionic and nonionic dilutable microemulsions.

    PubMed

    Hoffman, Roy E; Darmon, Eliezer; Aserin, Abraham; Garti, Nissim

    2016-02-01

    In our previous report we suggested a new analytical tool, high accuracy NMR chemical shift corrected for bulk magnetization as a supplementary tool to study structural transitions and droplet size and shape of dilutable microemulsions. The aim of this study was to show the generality of this technique and to demonstrate that in almost any type of microemulsion this technique provides additional valuable structural information. The analysis made by the technique adds to the elucidation of some structural aspects that could not be clearly determined by other classical techniques. Therefore, in this part we are extending the study to three additional systems differing in the type of oil phase (toluene and cyclohexane), the nature of the surfactants (anionic and nonionic), and other microemulsion characteristics. We studied sodium dodecyl sulfate (SDS)-based anionic microemulsions with different oils and a nonionic microemulsion based on Tween 20 as the surfactant and toluene as the oil phase. All the microemulsions were fully dilutable with water. We found that the change in the slope of chemical shift against dilution reflects phase transition points of the microemulsion (O/W, bicontinuous, W/O). Chemical shift changes were clearly observed with the transition between spherical and non-spherical (wormlike, etc.) droplet shapes. We compared the interaction of cyclohexane and toluene and used the anisotropic effect of toluene's ring current to determine its preferred orientation relative to SDS. Chemical shifts of the microemulsion components are therefore a useful addition to the arsenal of techniques for characterizing microemulsions.

  2. Characterization of the electronic properties of magnetic and semiconductor devices using scanning probe techniques

    NASA Astrophysics Data System (ADS)

    Schaadt, Daniel Maria

    In the first part of this dissertation, scanning probe techniques are used in the study of localized charge deposition and subsequent transport in Co nanoclusters embedded in a SiO2 matrix are presented, and the application of this material in a hybrid magneto-electronic device for magnetic field sensing is described. Co nanoclusters are charged by applying a bias voltage pulse between a conductive tip and the sample, and electrostatic force microscopy is used to image charged areas. An exponential decay in the peak charge density is observed with decay times dependent on the nominal Co film thickness and on the sign of the deposited charge. The results are interpreted as a consequence of Coulomb-blockade effects. This study leads to the design of a hybrid magneto-electronic device, in which Co nanoclusters embedded in SiO2 are incorporated into the gate of a Si metal-oxide-semiconductor field-effect transistor. Current flow through the Co nanoclusters leads to a buildup of electronic charge within the gate, and consequently to a transistor threshold voltage shift that varies with applied external magnetic field. The shift in threshold voltage results in an exponential change in subthreshold current and a quadratic change in saturation current. A detailed analysis of the device operation is presented. The second part of this dissertation focuses on the characterization of electronic properties of GaN-based heterostructure devices. Scanning capacitance microscopy (SCM) and spectroscopy (SCS) are used to investigate lateral variations in the transistor threshold voltage and the frequency-dependent response of surface charges and of charge in the two-dimensional electron gas (2DEG). The technique is described in detail, electrostatic simulations performed to study the influence of the probe tip geometry on the measured dC/dV spectra are presented, and the limitations of the SCS technique in a variety of applications are evaluated. Features in SCM images and maps of

  3. Suppression of spin transport in ferromagnet/oxide/semiconductor junctions by magnetic impurities in the tunnel barrier

    NASA Astrophysics Data System (ADS)

    Spiesser, Aurélie; Saito, Hidekazu; Yuasa, Shinji; Jansen, Ron

    2016-10-01

    We have studied how the insertion of sub-monolayer amounts of Mn impurities in the middle of the oxide tunnel barrier of Fe/GeO2 on p-type Ge affects the spin transport, using three-terminal Hanle measurements. Strikingly, the magnitude of the Hanle spin voltage is strongly reduced by increasing the amount of Mn dopants and is even completely absent for devices having an amount of Mn impurities equivalent to a 0.2-nm-thick layer. This demonstrates that magnetic impurities in the tunnel barrier are detrimental to the spin transport in ferromagnet/oxide/semiconductor junctions, and that the localized states associated with such magnetic impurities do not produce three-terminal Hanle spin signals.

  4. Investigation at the atomic scale of the Co spatial distribution in Zn(Co)O magnetic semiconductor oxide

    SciTech Connect

    Larde, R.; Talbot, E.; Vurpillot, F.; Pareige, P.; Schmerber, G.; Beaurepaire, E.; Dinia, A.; Pierron-Bohnes, V.

    2009-06-15

    A sputtered Zn{sub 0.95}Co{sub 0.05}O layer was chemically analyzed at the atomic scale in order to provide an accurate image of the distribution of Co atoms in the ZnO matrix. The investigation of the magnetic properties shows that the as-deposited Zn{sub 0.95}Co{sub 0.05}O is ferromagnetic at room temperature. Atom probe tomography reveals a homogeneous distribution of all chemical species in the layer and the absence of any Co clustering. This result proves that the ferromagnetic properties of this magnetic semiconductor cannot be attributed to a secondary phase or to metallic Co precipitates within the layer.

  5. Effects of magnetic site disorder of the 1-D Ising spin chain compounds Ca3(Co,Mn)2O6 with dilute doping

    NASA Astrophysics Data System (ADS)

    Casas, Brian; Lampen, Paula; Phan, Manh-Huong; Srikanth, Hariharan; Kovak, Jozef; Skorvanek, Ivan

    2015-03-01

    The spin chain compound Ca3Co2O6 has been extensively studied due to a number of unusual properties originating from geometrically frustrated Ising-like spin chains arranged in a triangular lattice. These quasi one dimensional structures provide an ideal environment to study dilute magnetic disorder in spin-glass like systems. Disorder controlled via chemical doping has been observed to weaken the spin glass behavior and disrupt a number of metamagnetic transitions found in pristine Ca3Co2O6. We report a systematic study of the effects of dilute Mn doping (x = 0.05 - 0.50) in Ca3Co2-xMnxO6 synthesized via a sol-gel method. Detailed AC and DC magnetization measurements performed on a SQUID magnetometer reveal the suppression of the step-like metamagnetic transitions by a doping of x = 0.25. The relaxation time is found to decrease with increasing Mn content, showing the destruction of the spin-glass like behavior. Our observations yield new insight into the role of site disorder on the glassy behavior in spin chain systems. Research was supported by the U.S. Department of Energy, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering under Award No. DE-FG02-07ER46438.

  6. Design and performance of an ultra-high vacuum scanning tunneling microscope operating at dilution refrigerator temperatures and high magnetic fields.

    PubMed

    Misra, S; Zhou, B B; Drozdov, I K; Seo, J; Urban, L; Gyenis, A; Kingsley, S C J; Jones, H; Yazdani, A

    2013-10-01

    We describe the construction and performance of a scanning tunneling microscope capable of taking maps of the tunneling density of states with sub-atomic spatial resolution at dilution refrigerator temperatures and high (14 T) magnetic fields. The fully ultra-high vacuum system features visual access to a two-sample microscope stage at the end of a bottom-loading dilution refrigerator, which facilitates the transfer of in situ prepared tips and samples. The two-sample stage enables location of the best area of the sample under study and extends the experiment lifetime. The successful thermal anchoring of the microscope, described in detail, is confirmed through a base temperature reading of 20 mK, along with a measured electron temperature of 250 mK. Atomically resolved images, along with complementary vibration measurements, are presented to confirm the effectiveness of the vibration isolation scheme in this instrument. Finally, we demonstrate that the microscope is capable of the same level of performance as typical machines with more modest refrigeration by measuring spectroscopic maps at base temperature both at zero field and in an applied magnetic field.

  7. Design and performance of an ultra-high vacuum scanning tunneling microscope operating at dilution refrigerator temperatures and high magnetic fields

    NASA Astrophysics Data System (ADS)

    Misra, S.; Zhou, B. B.; Drozdov, I. K.; Seo, J.; Urban, L.; Gyenis, A.; Kingsley, S. C. J.; Jones, H.; Yazdani, A.

    2013-10-01

    We describe the construction and performance of a scanning tunneling microscope capable of taking maps of the tunneling density of states with sub-atomic spatial resolution at dilution refrigerator temperatures and high (14 T) magnetic fields. The fully ultra-high vacuum system features visual access to a two-sample microscope stage at the end of a bottom-loading dilution refrigerator, which facilitates the transfer of in situ prepared tips and samples. The two-sample stage enables location of the best area of the sample under study and extends the experiment lifetime. The successful thermal anchoring of the microscope, described in detail, is confirmed through a base temperature reading of 20 mK, along with a measured electron temperature of 250 mK. Atomically resolved images, along with complementary vibration measurements, are presented to confirm the effectiveness of the vibration isolation scheme in this instrument. Finally, we demonstrate that the microscope is capable of the same level of performance as typical machines with more modest refrigeration by measuring spectroscopic maps at base temperature both at zero field and in an applied magnetic field.

  8. Fe Substitution Effect on the High-Field Magnetization in the Kondo Semiconductor CeRu2Al10

    NASA Astrophysics Data System (ADS)

    Kondo, Akihiro; Kindo, Koichi; Nohara, Hiroki; Nakamura, Michio; Tanida, Hiroshi; Sera, Masafumi; Nishioka, Takashi

    2017-02-01

    The magnetization of the Fe substitution system in the Kondo semiconductor CeRu2Al10 was measured in high magnetic fields of up to 72 T with the magnetic field (H) along the a-axis. The magnetization curve indicates that the critical field from the antiferromagnetic (AFM) phase to the paramagnetic one (Hcp) shows an increase from ˜51 (x = 0) to ˜60 T (x = 0.7) owing to the Fe substitution. The Fe concentration dependence of Hcp is similar to that of the magnitude of the energy of the spin gap. The degree of the concave H dependence of the magnetization curve, which is the characteristic feature for H ∥ a in CeT2Al10 (T = Ru, Os), is not strongly enhanced by the Fe substitution. This may be due to the suppression of the strong anisotropy of the hybridization between the conduction band and the localized 4f shell along the a-axis. These results reveal that the spin gap of the present system consists of at least two components, the gap due to the spin (Kondo) singlet formation and the anisotropy gap of the AF magnon.

  9. Magnetic domain structure study of a ferromagnetic semiconductor using a home-made low temperature scanning Hall probe microscope

    NASA Astrophysics Data System (ADS)

    Kweon, Seongsoo; de Lozanne, Alex; Samarth, Nitin

    2008-03-01

    GaMnAs is a ferromagnetic semiconductor actively studied for basic research and for the possibility of application to spintronic devices. To study the local magnetic properties of this material the magnetic force microscope (MFM) is too invasive (by affecting the domains in the sample) or not sensitive enough (due to the weak magnetization of the GaMnAs). We have therefore built a scanning Hall probe microscope (SHPM) to complement our MFM studies. We use a lock-in amplifier to supply a bias current of 1-10μA and to measure the Hall voltage. We calibrated this home-made SHPM with a computer hard disk sample. Comparing images of this sample obtained with MFM and SHPM we show that our home-made SHPM is operating well. We observed the domain structure of 30-nm thick Ga0.94Mn0.06As epilayer grown on a 700nm-thick In0.13Ga0.87As buffer covering a GaAs substrate. We will study the magnetic domain structure as a function of temperature with varying external magnetic fields.

  10. Ferromagnets based on diamond-like semiconductors GaSb, InSb, Ge, and Si supersaturated with manganese or iron impurities during laser-plasma deposition

    SciTech Connect

    Demidov, E. S.; Podol'skii, V. V.; Lesnikov, V. P.; Sapozhnikov, M. V.; Druzhnov, D. M.; Gusev, S. N.; Gribkov, B. A.; Filatov, D. O.; Stepanova, Yu. S.; Levchuk, S. A.

    2008-01-15

    Properties of thin (30-100 nm) layers of diluted magnetic semiconductors based on diamond-like compounds III-V (InSb and GaSb) and elemental semiconductors Ge and Si doped with 3d impurities of manganese and iron up to 15% were measured and discussed. The layers were grown by laser-plasma deposition onto heated single-crystal gallium arsenide or sapphire substrates. The ferromagnetism of layers with the Curie temperature up to 500 K appeared in observations of the ferromagnetic resonance, anomalous Hall effect, and magneto-optic Kerr effect. The carrier mobility of diluted magnetic semiconductors is a hundred times larger than that of the previously known highest temperature magnetic semiconductors, i.e., copper and chromium chalcogenides. The difference between changes in the magnetization with temperature in diluted semiconductors based on III-V, Ge, and Si was discussed. A complex structure of the ferromagnetic resonance spectrum in Si:Mn/GaAs was observed. The results of magnetic-force microscopy showed a weak correlation between the surface relief and magnetic inhomogeneity, which suggests that the ferromagnetism is caused by the 3d-impurity solid solution, rather than ferromagnetic phase inclusions.

  11. Newtype single-layer magnetic semiconductor in transition-metal dichalcogenides VX2 (X = S, Se and Te)

    PubMed Central

    Fuh, Huei-Ru; Chang, Ching-Ray; Wang, Yin-Kuo; Evans, Richard F. L.; Chantrell, Roy W.; Jeng, Horng-Tay

    2016-01-01

    We present a newtype 2-dimensional (2D) magnetic semiconductor based on transition-metal dichalcogenides VX2 (X = S, Se and Te) via first-principles calculations. The obtained indirect band gaps of monolayer VS2, VSe2, and VTe2 given from the generalized gradient approximation (GGA) are respectively 0.05, 0.22, and 0.20 eV, all with integer magnetic moments of 1.0 μB. The GGA plus on-site Coulomb interaction U (GGA + U) enhances the exchange splittings and raises the energy gap up to 0.38~0.65 eV. By adopting the GW approximation, we obtain converged G0W0 gaps of 1.3, 1.2, and 0.7 eV for VS2, VSe2, and VTe2 monolayers, respectively. They agree very well with our calculated HSE gaps of 1.1, 1.2, and 0.6 eV, respectively. The gap sizes as well as the metal-insulator transitions are tunable by applying the in-plane strain and/or changing the number of stacking layers. The Monte Carlo simulations illustrate very high Curie-temperatures of 292, 472, and 553 K for VS2, VSe2, and VTe2 monolayers, respectively. They are nearly or well beyond the room temperature. Combining the semiconducting energy gap, the 100% spin polarized valence and conduction bands, the room temperature TC, and the in-plane magnetic anisotropy together in a single layer VX2, this newtype 2D magnetic semiconductor shows great potential in future spintronics. PMID:27601195

  12. Dilution Confusion: Conventions for Defining a Dilution

    ERIC Educational Resources Information Center

    Fishel, Laurence A.

    2010-01-01

    Two conventions for preparing dilutions are used in clinical laboratories. The first convention defines an "a:b" dilution as "a" volumes of solution A plus "b" volumes of solution B. The second convention defines an "a:b" dilution as "a" volumes of solution A diluted into a final volume of "b". Use of the incorrect dilution convention could affect…

  13. Ab initio studies of magnetic anisotropy energy in highly Co-doped ZnO

    NASA Astrophysics Data System (ADS)

    Łusakowski, A.; Szuszkiewicz, W.

    2017-03-01

    Density functional theory (DFT) calculations of the energy of magnetic anisotropy for diluted magnetic semiconductor (Zn,Co)O were performed using OpenMX package with fully relativistic pseudopotentials. The analysis of the band spin-orbit interaction and the magnetic ion's surrounding on magnetic anisotropy have been provided. As a result, the calculations show that the magnetic anisotropy in (Zn,Co)O solid solution, mainly of the single ion anisotropy type has been caused by Co ions.

  14. Magnetic disorder in diluted FexM100-x granular thin films (M=Au, Ag, Cu; x < 10 at.%).

    PubMed

    Alba Venero, D; Fernández Barquín, L; Alonso, J; Fdez-Gubieda, M L; Rodríguez Fernández, L; Boada, R; Chaboy, J

    2013-07-10

    Nanogranular thin films of Fe7Au93, Fe7Ag93 and Fe9Cu91 have been sputtered onto Si(100) substrates with the aim of studying the magnetic interactions. X-ray diffraction shows a major noble metal matrix with broad peaks stemming from (111) textured fcc-Au, Ag and Cu. The noble metal forms a nanogranular environment, as confirmed by transmission electron microscopy, with mean particle sizes below 10 nm. The high magnetoresistance (>6%) reveals the existence of Fe nanoparticles. X-ray absorption near edge spectroscopy confirms the presence of a bcc-Fe atom arrangement and some dissolved Fe atoms in the matrix, and XMCD shows the polarization of Au by the Fe nanoparticles. DC-magnetization displays a field-dependent irreversibility produced by the freezing of magnetic nanoparticles into a superspin-glass state. The hysteresis loops remain unsaturated at 5 K and 45 kOe. The coercivity displays a sharp temperature decrease towards a minimum below 50 K, levelling off at higher values, reaching Hc = 200 Oe at 300 K. Annealing of FeAu results in a double-peak zero field cooled magnetization and a slight decrease of the coercivity. The interpretation of the results supports the presence of Fe nanoparticles embedded in the major noble matrix, with some diluted Fe atoms/clusters.

  15. Heat-Treatment-Induced Switching of Magnetic States in the Doped Polar Semiconductor Ge1‑xMnxTe

    NASA Astrophysics Data System (ADS)

    Kriener, M.; Nakajima, T.; Kaneko, Y.; Kikkawa, A.; Yu, X. Z.; Endo, N.; Kato, K.; Takata, M.; Arima, T.; Tokura, Y.; Taguchi, Y.

    2016-05-01

    Cross-control of a material property - manipulation of a physical quantity (e.g., magnetisation) by a nonconjugate field (e.g., electrical field) – is a challenge in fundamental science and also important for technological device applications. It has been demonstrated that magnetic properties can be controlled by electrical and optical stimuli in various magnets. Here we find that heat-treatment allows the control over two competing magnetic phases in the Mn-doped polar semiconductor GeTe. The onset temperatures Tc of ferromagnetism vary at low Mn concentrations by a factor of five to six with a maximum Tc ≈ 180 K, depending on the selected phase. Analyses in terms of synchrotron x-ray diffraction and energy dispersive x-ray spectroscopy indicate a possible segregation of the Mn ions, which is responsible for the high-Tc phase. More importantly, we demonstrate that the two states can be switched back and forth repeatedly from either phase by changing the heat-treatment of a sample, thereby confirming magnetic phase-change-memory functionality.

  16. Heat-Treatment-Induced Switching of Magnetic States in the Doped Polar Semiconductor Ge1−xMnxTe

    PubMed Central

    Kriener, M.; Nakajima, T.; Kaneko, Y.; Kikkawa, A.; Yu, X. Z.; Endo, N.; Kato, K.; Takata, M.; Arima, T.; Tokura, Y.; Taguchi, Y.

    2016-01-01

    Cross-control of a material property - manipulation of a physical quantity (e.g., magnetisation) by a nonconjugate field (e.g., electrical field) – is a challenge in fundamental science and also important for technological device applications. It has been demonstrated that magnetic properties can be controlled by electrical and optical stimuli in various magnets. Here we find that heat-treatment allows the control over two competing magnetic phases in the Mn-doped polar semiconductor GeTe. The onset temperatures Tc of ferromagnetism vary at low Mn concentrations by a factor of five to six with a maximum Tc ≈ 180 K, depending on the selected phase. Analyses in terms of synchrotron x-ray diffraction and energy dispersive x-ray spectroscopy indicate a possible segregation of the Mn ions, which is responsible for the high-Tc phase. More importantly, we demonstrate that the two states can be switched back and forth repeatedly from either phase by changing the heat-treatment of a sample, thereby confirming magnetic phase-change-memory functionality. PMID:27160657

  17. Experimental equipment and procedure for the investigation of semiconductors galvanomagnetic properties in pulsed magnetic fields (in Ukrainian)

    NASA Astrophysics Data System (ADS)

    Savitsky, V. G.; Storchun, P. E.

    Experimental equipment and procedure for the investigation of semiconductors galvanomagnetic properties in pulsed magnetic fields are presented. The experimental equipment consists of the pulsed magnetic field generation system with the amplitude (B_{max}) up to 20T and a data-recording unit. The compensation of pickup noise-voltage induced by the pulsed magnetic field is originaly realized by compensating coils with the variable effective area. The analog amplifiers unit and the integrator that are a part of the data-recording unit form two measuring channels respectively. The output voltage from these channels are switched by the electronic analog commutator to the input of high-speed ADC in the program preset order. The results of analog-to-digital conversion (12 bits+one overflow bit) and channel number (3 bits) are then entered into RAM (2048×16bits) and respectively transmitted to the personal computer when the experiment is completed. The ADC high-speed performance allows for 2048 measurements during 2-2.5 periods of the magnetic field oscillation.}

  18. Theory of fine structure of correlated exciton states in self-assembled semiconductor quantum dots in a magnetic field

    NASA Astrophysics Data System (ADS)

    Trojnar, Anna H.; Kadantsev, Eugene S.; Korkusiński, Marek; Hawrylak, Pawel

    2011-12-01

    A theory of the fine structure of correlated exciton states in self-assembled parabolic semiconductor quantum dots in a magnetic field perpendicular to the quantum dot plane is presented. The correlated exciton wave function is expanded in configurations consisting of products of electron and heavy-hole 2D harmonic oscillator states (HO) in a magnetic field and the electron spin Sz=±1/2 and a heavy-hole spin τz=±3/2 states. Analytical expressions for the short- and long-range electron-hole exchange Coulomb interaction matrix elements are derived in the HO and spin basis for arbitrary magnetic field. This allows the incorporation of short- and long-range electron-hole exchange, direct electron-hole interaction, and quantum dot anisotropy in the exact diagonalization of the exciton Hamiltonian. The fine structure of ground and excited correlated exciton states as a function of a number of confined shells, quantum dot anisotropy, and magnetic field is obtained using exact diagonalization of the many-body Hamiltonian. The effects of correlations are shown to significantly affect the energy splitting of the two bright exciton states.

  19. Effects of Dy sub lattice dilution on transport and magnetic properties in Dy1-xKxMnO3

    NASA Astrophysics Data System (ADS)

    Yadagiri, K.; Nithya, R.; Shukla, Neeraj; Satya, A. T.

    2017-03-01

    Interaction of multiple oxidation states of manganese ions with rare earth ions in manganites leads to the observation of various magnetic ground states. To understand the effect of average ionic size on electrical conductivity and magnetic ground state properties in Dy1-xKxMnO3 (x=0.0, 0.1, 0.2 & 0.3), we have investigated electron transport as a function of temperature and magnetic properties as a function of temperature, frequency and magnetic field of these compounds. Although mixed valent manganese ions can facilitate a double exchange interaction via oxygen ion leading to a ferromagnetic metallic ground state, no insulator-metal transition was detected. On the other hand, in the compounds with x=0.0 to 0.2, transport properties suggested an adiabatic small polaron hopping conduction mechanism. However, x=0.3 compound followed a variable range hopping conduction. Temperature variation of magnetization data exhibited three different types of transitions involving Mn and Dy ions. The bifurcation between zero field cooled and field cooled magnetization data was observed in all the compounds. Field-dependent magnetization of all the compounds showed hysteresis loops for temperatures less than 10 K. Although large irreversibility between zero field cooled and field cooled magnetization data was observed with a peak for x=0.3, the peak temperatures did not alter with frequency ruling out the possibility of spin glass behavior. The presence of hysteresis loops and lack of saturation magnetization implied the simultaneous presence of ferromagnetic and antiferromagnetic exchange interactions well within the antiferromagnetic ordering of Mn ions.

  20. CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES: Study of Squeezed Excitons in Polar Semiconductors

    NASA Astrophysics Data System (ADS)

    Yin, Miao; Cheng, Ze; Wu, Zi-Xia; Ping, Yun-Xia

    2009-03-01

    Some properties of excitons in polar semiconductors are studied theoretically by means of squeezed state variational approach. This method makes it possible to consider bilinear terms of the phonon operators as well as linear terms arising from the Lee-Low-Pines (LLP)-like transformation. The exciton ground state energy and binding energy are calculated numerically. It is shown that the squeezing effect is significant in the case of strong exciton-phonon coupling region.

  1. Evidence of dilute ferromagnetism in rare-earth doped yttrium aluminium garnet

    SciTech Connect

    Farr, Warrick G.; Goryachev, Maxim; Le Floch, Jean-Michel; Tobar, Michael E.; Bushev, Pavel

    2015-09-21

    This work demonstrates strong coupling regime between an erbium ion spin ensemble and microwave hybrid cavity-whispering gallery modes in a yttrium aluminium garnet dielectric crystal. Coupling strengths of 220 MHz and mode quality factors in excess of 10{sup 6} are demonstrated. Moreover, the magnetic response of high-Q modes demonstrates behaviour which is unusual for paramagnetic systems. This behaviour includes hysteresis and memory effects. Such qualitative change of the system's magnetic field response is interpreted as a phase transition of rare earth ion impurities. This phenomenon is similar to the phenomenon of dilute ferromagnetism in semiconductors. The clear temperature dependence of the phenomenon is demonstrated.

  2. Cyclotron Splittings in the Plasmon Resonances of Electronically Doped Semiconductor Nanocrystals Probed by Magnetic Circular Dichroism Spectroscopy.

    PubMed

    Hartstein, Kimberly H; Schimpf, Alina M; Salvador, Michael; Gamelin, Daniel R

    2017-04-10

    A fundamental understanding of the rich electronic structures of electronically doped semiconductor nanocrystals is vital for assessing the utility of these materials for future applications from solar cells to redox catalysis. Here, we examine the use of magnetic circular dichroism (MCD) spectroscopy to probe the infrared localized surface plasmon resonances of p-Cu2-xSe, n-ZnO, and tin-doped In2O3 (n-ITO) nanocrystals. We demonstrate that the MCD spectra of these nanocrystals can be analyzed by invoking classical cyclotron motions of their excess charge carriers, with experimental MCD signs conveying the carrier types (n or p) and experimental MCD intensities conveying the cyclotron splitting magnitudes. The experimental cyclotron splittings can then be used to quantify carrier effective masses (m*), with results that agree with bulk in most cases. MCD spectroscopy thus offers a unique measure of m* in free-standing colloidal semiconductor nanocrystals, raising new opportunities to investigate the influence of various other synthetic or environmental parameters on this fundamentally important electronic property.

  3. Anomalous magnetic phase diagrams in the site-diluted Heisenberg antiferromagnets, A2Fe1- xInxCl5.H2O (A = Rb, K)

    NASA Astrophysics Data System (ADS)

    Campo, Javier; Palacio, Fernando; Morón, M. Carmen; Becerra, Carlos C.; Paduan-Filho, Armando

    1999-06-01

    The effect of the substitution of diamagnetic ions for paramagnetic ones in the magnetic phase diagrams of the low-anisotropy antiferromagnets A2Fe1-xInxCl5.H2O (A = Rb,K) is investigated. In the region where the spin-flop (SF) transition occurs, the consequences of dilution are manifested as the appearance of a structure of secondary transition lines and a substantial enhancement of the transition width. In the SF region a multiple-peak structure is observed in the ac susceptibility measurements which is associated with the secondary transition lines. This behaviour is discussed in terms of several mechanisms proposed previously. When the sample is cooled in applied fields below HSF(T) we observe the presence of a remanent magnetization (Mr) in the antiferromagnetic (AF) phase. Such magnetization was previously found in these solid solutions at very low fields (a few Oe). Here we also find that Mr follows a temperature dependence that is independent of the concentration x and is the same for the K and Rb derivatives.

  4. Absence of exchange interaction between localized magnetic moments and conduction-electrons in diluted Er{sup 3+} gold-nanoparticles

    SciTech Connect

    Lesseux, G. G. Urbano, R. R.; Iwamoto, W.; García-Flores, A. F.; Rettori, C.

    2014-05-07

    The Electron Spin Resonance (ESR) of diluted Er{sup 3+} magnetic ions in Au nanoparticles (NPs) is reported. The NPs were synthesized by reducing chloro triphenyl-phosphine gold(I) and erbium(III) trifluoroacetate. The Er{sup 3+} g-value along with the observed hyperfine splitting indicate that the Er{sup 3+} impurities are in a local cubic symmetry. Furthermore, the Er{sup 3+} ESR spectra show that the exchange interaction between the 4f and the conduction electrons (ce) is absent or negligible in Au{sub 1–x}Er{sub x} NPs, in contrast to the ESR results in bulk Au{sub 1–x}Er{sub x}. Therefore, the nature of this interaction needs to be reexamined at the nano scale range.

  5. Electrical Control of Magnetic Dynamics in Hybrid Metal-Semiconductor Systems

    DTIC Science & Technology

    2014-07-25

    C. Ralph, R. A. Buhrman. Central role of domain wall depinning for perpendicular magnetization switching driven by spin torque from the spin Hall...Tunnel magnetoresistance and spin torque switching in MgO-based magnetic tunnel junctions with a Co/Ni multilayer electrode, Applied Physics...out that the giant SHE explained previously-mysterious results from other groups concerning current-driven magnetic domain wall motion. (The

  6. PwrSoC (integration of micro-magnetic inductors/transformers with active semiconductors) for more than Moore technologies

    NASA Astrophysics Data System (ADS)

    Mathuna, Cian Ó.; Wang, Ningning; Kulkarni, Santosh; Roy, Saibal

    2013-07-01

    This paper introduces the concept of power supply on chip (PwrSoC) which will enable the development of next-generation, functionally integrated, power management platforms with applications in dc-dc conversion, gate drives, isolated power transmission and ultimately, high granularity, on-chip, power management for mixed-signal, SOC chips. PwrSoC will integrate power passives with the power management IC, in a 3D stacked or monolithic form factor, thereby delivering the performance of a highefficiency dc-dc converter within the footprint of a low-efficiency linear regulator. A central element of the PwrSoC concept is the fabrication of power micro-magnetics on silicon to deliver micro-inductors and micro-transformers. The paper details the magnetics on silicon process which combines thin film magnetic core technology with electroplated copper conductors. Measured data for micro-inductors show inductance operation up to 20 MHz, footprints down to 0.5 mm2, efficiencies up to 93% and dc current carrying capability up to 600 mA. Measurements on micro-transformers show voltage gain of approximately - 1 dB at between 10 MHz and 30 MHz. Contribution to the Topical Issue “International Semiconductor Conference Dresden-Grenoble - ISCDG 2012”, Edited by Gérard Ghibaudo, Francis Balestra and Simon Deleonibus.

  7. Propagation of electro-kinetic waves in magnetized GaN semiconductor with nano-sized ion colloids

    SciTech Connect

    Saxena, Ajay; Sharma, Giriraj; Jat, K. L.; Rishi, M. P.

    2015-07-31

    Based on hydrodynamic model of multi-component plasma, an analytical study on propagation of longitudinal electro-kinetic (LEK) waves in wurtzite and zincblende structures of GaN is carried out. Nano-sized ion colloids (NICs) are embedded in the sample by the technique of ion-implantation. The implanted NICs are considered massive by an order as compared to the host lattice points and do not participate in Based LEK perturbations. Though, the NICs are continuously bombarded by the electrons as well as the holes yet, the former acquires a net negative charge owing to relatively higher mobility of electrons and consequently results into depletion of electron density in the medium. It i s found that the presence of charged NICs significantly modifies the dispersion and amplification characteristics of LEK waves in magnetized GaN semiconductor plasma and their role becomes increasingly effective as the fraction of charge on them increases.

  8. Magnetoamplification in a bipolar magnetic junction transistor.

    PubMed

    Rangaraju, N; Peters, J A; Wessels, B W

    2010-09-10

    We have demonstrated the first bipolar magnetic junction transistor using a dilute magnetic semiconductor. For an InMnAs p-n-p transistor magnetoamplification is observed at room temperature. The observed magnetoamplification is attributed to the magnetoresistance of the magnetic semiconductor InMnAs heterojunction. The magnetic field dependence of the transistor characteristics confirm that the magnetoamplification results from the junction magnetoresistance. To describe the experimentally observed transistor characteristics, we propose a modified Ebers-Moll model that includes a series magnetoresistance attributed to spin-selective conduction. The capability of magnetic field control of the amplification in an all-semiconductor transistor at room temperature potentially enables the creation of new computer logic architecture where the spin of the carriers is utilized.

  9. Synthesis and Characterization of Novel Magnetic Heusler Semiconductors for Device and Materials Applications

    NASA Astrophysics Data System (ADS)

    Jamer, Michelle E.

    Spintronic devices for magnetic memory applications control the magnetic properties of the materials by manipulating the spin and magnetic moment of the electrons. Present devices use ferromagnetic materials that have magnetic fringing fields that interfere with other components of the device. The main focus of this research is investigating low-moment ferrimagnetic inverse Heusler materials that could be used in spintronic devices thereby eliminating the external fringing magnetic field. The challenge of this research is that while hundreds of inverse Heusler materials have been predicted for possible uses in devices, many of these compounds have a positive formation energy indicating that they are not likely to form and will decompose into other compounds. The magnetic and structural properties of several inverse Heusler systems were studied. X-ray diffraction was used to determine the phase and ordering of the crystal structure. SQUID magnetometry and X-ray magnetic circular dichroism determined the bulk magnetic properties and the atom-specific magnetic moments. This thesis outlines the first synthesis of Heusler-type V3Al, which was discovered to be an antiferromagnet. Cr2CoAl was found to exist in a Heusler phase with antiferromagnetically coupled Cr and Co atomic moments. In addition, Mn2CoAl, Cr2CoGa, and Mn3Al were grown as thin films on desorbed GaAs substrates by molecular beam epitaxy. This thesis demonstrated the successful synthesis and characterization of several Heusler compounds that could be used in future devices. These are the seminal results of inverse Heusler synthesis, which are proposed in devices such as spin-FETs and nonvolatile magnetic memory.

  10. Room-temperature ferromagnetism observed in Nd-doped In2O3 dilute magnetic semiconducting nanowires

    NASA Astrophysics Data System (ADS)

    Lv, Zhanpeng; Zhang, Junran; Niu, Wei; Zhang, Minhao; Song, Li; Zhu, Hairong; Wang, Xuefeng

    2016-09-01

    Nd-doped In2O3 nanowires were fabricated by an Au-catalyzed chemical vapor deposition method. Nd atoms were successfully doped into the In2O3 host lattice structure, as revealed by energy dispersive x-ray spectroscopy, x-ray photoelectron spectroscopy, Raman spectroscopy, and x-ray diffraction. Robust room temperature ferromagnetism was observed in Nd-doped In2O3 nanowires, which was attributed to the long-range-mediated magnetization among Nd3+-vacancy complexes through percolation-bound magnetic polarons. Project supported by the National Natural Science Foundation of China (Grant No. 11274003), the Priority Academic Program Development of Jiangsu Higher Education Institutions, China, and the Fundamental Research Funds for the Central Universities, China.

  11. Magnetic ordering in the ultrapure site-diluted spin chain materials SrCu1 -xNixO2

    NASA Astrophysics Data System (ADS)

    Simutis, G.; Thede, M.; Saint-Martin, R.; Mohan, A.; Baines, C.; Guguchia, Z.; Khasanov, R.; Hess, C.; Revcolevschi, A.; Büchner, B.; Zheludev, A.

    2016-06-01

    The muon spin rotation technique is used to study magnetic ordering in ultrapure samples of SrCu1 -xNixO2 , an archetypical S =1 /2 antiferromagnetic Heisenberg chain system with a small number of S =1 defects. The ordered state in the parent compound is shown to be highly homogeneous, contrary to a previous report [M. Matsuda et al., Phys. Rev. B 55, R11953 (1997), 10.1103/PhysRevB.55.R11953]. Even a minute number of Ni impurities results in inhomogeneous order and a decrease of the transition temperature. At as little as 0.5 % Ni concentration, magnetic ordering is entirely suppressed. The results are compared to previous theoretical studies of weakly coupled spin chains with site defects.

  12. Magnetic and transport properties of the ferromagnetic semiconductor heterostructures (In,Mn)As/(Ga,Al)Sb

    NASA Astrophysics Data System (ADS)

    Oiwa, A.; Endo, A.; Katsumoto, S.; Iye, Y.; Ohno, H.; Munekata, H.

    1999-02-01

    We have investigated the magnetic and transport properties of (In,Mn)As thin films grown on a (Ga,Al)Sb layer. Strong perpendicular magnetic anisotropy is observed for the (In,Mn)As layer, the thickness of which is less than the critical value required for relaxation of lattice-mismatch-induced strain. The anomalous Hall coefficient is found to be approximately proportional to the square of resistivity in the low-field region. Large negative magnetoresistance is found to occur over a magnetic field range significantly wider than that for the ferromagnetic hysteresis loop.

  13. TiO2 and SnO2 magnetic nanocomposites: influence of semiconductors and synthetic methods on photoactivity.

    PubMed

    Mourão, Henrique A J L; Ribeiro, Caue

    2011-09-01

    A number of reports have been published on use of TiO2 in thin films, magnetic nanocomposites, or heterostructures such as TiO2/Ag and TiO2/SnO2, as catalysts for water decontamination. Hence, semiconductor materials such as SnO2, associated with TiO2 in such nanocomposites, should be assessed in depth for such applications, especially those involving complex structures, such as magnetic photocatalytic nanocomposites. The present study describes the synthesis, characterization and testing of the photocatalytic potential of TiO2 or SnO2 magnetic nanocomposites obtained by the polymeric precursor and the hydrolytic sol-gel methods. The nanocomposites TiO2/CoFe2O4 and SnO2/CoFe2O4 were synthesized from polymeric precursors while TiO2/Fe3O4 and SnO2/Fe3O4 were synthesized by the hydrolytic sol-gel method. The materials were characterized by X-ray diffraction (XRD), scanning electron microscopy (FEG/SEM) and transmission electron microscopy (TEM). The photocatalytic potentials were evaluated by rhodamine B dye photodegradation under UV-C radiation. Compared to SnO2, the nanocomposites with a coating of TiO2 were found to show better photocatalytic activity, but the SnO2 magnetic nanocomposites showed some photocatalytic activity, even though SnO2 is reported to be inactive for these purposes. As for the synthesis method, the nanocomposites obtained from polymeric precursors had smaller surface areas, but higher photocatalytic activity, than those obtained by the hydrolytic sol-gel method. This observation was attributed to the higher crystallinity and a more active surface resulting from calcination of the polymeric precursor material.

  14. Bio-inactivation of human malignant cells through highly responsive diluted colloidal suspension of functionalized magnetic iron oxide nanoparticles

    NASA Astrophysics Data System (ADS)

    Ferreira, Roberta V.; Silva-Caldeira, Priscila P.; Pereira-Maia, Elene C.; Fabris, José D.; Cavalcante, Luis Carlos D.; Ardisson, José D.; Domingues, Rosana Z.

    2016-04-01

    Magnetic fluids, more specifically aqueous colloidal suspensions containing certain magnetic nanoparticles (MNPs), have recently been gaining special interest due to their potential use in clinical treatments of cancerous formations in mammalians. The technological application arises mainly from their hyperthermic behavior, which means that the nanoparticles dissipate heat upon being exposed to an alternating magnetic field (AMF). If the temperature is raised to slightly above 43 °C, cancer cells are functionally inactivated or killed; however, normal cells tend to survive under those same conditions, entirely maintaining their bioactivity. Recent in vitro studies have revealed that under simultaneous exposure to an AMF and magnetic nanoparticles, certain lines of cancer cells are bio-inactivated even without experiencing a significant temperature increase. This non-thermal effect is cell specific, indicating that MNPs, under alternating magnetic fields, may effectively kill cancer cells under conditions that were previously thought to be implausible, considering that the temperature does not increase more than 5 °C, which is also true in cases for which the concentration of MNPs is too low. To experimentally test for this effect, this study focused on the feasibility of inducing K562 cell death using an AMF and aqueous suspensions containing very low concentrations of MNPs. The assay was designed for a ferrofluid containing magnetite nanoparticles, which were obtained through the co-precipitation method and were functionalized with citric acid; the particles had an average diameter of 10 ± 2 nm and a mean hydrodynamic diameter of approximately 40 nm. Experiments were first performed to test for the ability of the ferrofluid to release heat under an AMF. The results show that for concentrations ranging from 2.5 to 1.0 × 103 mg L-1, the maximum temperature increase was actually less than 2 °C. However, the in vitro test results from K562 cells and suspensions

  15. Electron Scattering on a Magnetic Skyrmion in the Nonadiabatic Approximation.

    PubMed

    Denisov, K S; Rozhansky, I V; Averkiev, N S; Lähderanta, E

    2016-07-08

    We present a theory of electron scattering on a magnetic Skyrmion for the case when the exchange interaction is moderate so that the adiabatic approximation and the Berry phase approach are not applicable. The theory explains the appearance of a topological Hall current in the systems with magnetic Skyrmions, the special importance of which is its applicability to dilute magnetic semiconductors with a weak exchange interaction.

  16. Preparation of one-dimensional diluted magnetic semiconducting Cr0.046Zn0.954O and properties tuning with H2 atmospheric annealing

    NASA Astrophysics Data System (ADS)

    Li, Jian-Min; Zeng, Xian-Lin

    2017-02-01

    Cr0.046Zn0.954O nanowires (NWs) were synthesized by electrospinning and treated with different atmosphere (O2 and H2) annealings. Our work demonstrates that not all the oxygen vacancies can really contribute to the ferromagnetism of cationic Cr3+-doped ZnO (Cr0.046Zn0.954O) electrospun NWs. The photoluminescence measurements show that the single positively charged oxygen vacancy (i.e., Vo+ or F+ centers (Fc)) bound defect states are quite stable in Cr0.046Zn0.954O NWs. Upon hydrogen-annealing, the specifically deep-level defect Fc was annihilated; thus, an electron transfer may occur from shallow donor H+ (e-) to deep donor Fc. An electron paramagnetic resonance signal at g ˜2.0583 was found in the Cr0.046Zn0.954O NWs, which is responsible for Cr3+-Fc complex formation, and a weak broad signal at g ˜15.5807 is considered as another paramagnetic center of Cr-Cr impurity pairs generated in the H2-annealed Cr0.046Zn0.954O NWs. The hydrogen-annealing offers an easier way to Fc engineering where a precise control of magnetic properties of diluted magnetic semiconducting oxide NWs is sought.

  17. Using x-ray diffraction to identify precipitates in transition metal doped semiconductors

    NASA Astrophysics Data System (ADS)

    Zhou, Shengqiang; Potzger, K.; Talut, G.; von Borany, J.; Skorupa, W.; Helm, M.; Fassbender, J.

    2008-04-01

    In the past decade, room temperature ferromagnetism was often observed in transition metal doped semiconductors, which were claimed as diluted magnetic semiconductors (DMS). Nowadays intensive activities are devoted to clarify wether the observed ferromagnetism stems from carrier mediated magnetic impurities, ferromagnetic precipitates, or spinodal decomposition. In this paper, we have correlated the structural and magnetic properties of transition metal doped ZnO, TiO2, and Si, prepared by ion implantation. Crystalline precipitates, i.e., transition metal (Co, Ni) and Mn-silicide nanocrystals, are responsible for the magnetism. Additionally due to their orientation nature with respect to the host, these nanocrystals in some cases are not detectable by conventional x-ray diffraction (XRD). This nature results in the pitfall of using XRD to exclude magnetic precipitates in DMS materials.

  18. Magnetic-resonance investigation of the ordering in randomly-site-diluted antiferromagnets: KMnF3: Mg

    NASA Astrophysics Data System (ADS)

    D'Ariano, G.; Borsa, F.

    1982-12-01

    Measurements of 19F NMR in a series of polycrystalline mixed paramagnetic compounds KMnxMg1-xF3 with x varying over the whole concentration range have been performed as a function of temperature. The paramagnetic shift and the linewidth and relaxation time of the three NMR lines corresponding to those distinct classes of 19F nuclei that have different numbers of nearest-neighbor magnetic ions were measured as the temperature approaches the transition temperature. The paramagnetic shifts of fluorine nuclei having one and two nearest-neighbor Mn ions compare well with the predictions of a simple random-molecular-field approximation (RMFA). It is shown that the substitution of Mn with Mg modifies locally the nuclear-electron transferred hfs interaction by about 20%. The linewidth of the two lines increases drastically as TN is approached. The attempt to explain the data by utilizing Moriya's theory rescaled in the RMFA framework fails completely, indicating that the dynamic effects should be treated in real space. The antiferromagnetic ordering was monitored by measuring the rf susceptibility in zero external magnetic field. It is found that the antiferromagnetic transition is broadened by the concentration gradients present in the samples. The average transition temperature was determined as a function of the average concentration, and the results are compared with the theoretical predictions of recent calculations. Good agreement is found if one takes into account the concentration dependence of the exchange coupling constant.

  19. Magnetic dynamics of dilute iron nano-clusters in silver films from Mössbauer spectroscopy and muon spin rotation

    NASA Astrophysics Data System (ADS)

    Herrera, W. T.; Dinola, I.; Baggio-Saitovitch, E.; Kraken, M.; Litterst, F. J.

    2011-11-01

    A silver film containing nanometer size clusters of iron (nominal conc. 1 at%) has been studied by Mössbauer spectroscopy and Low-Energy Muon Spin Rotation. Below about 20 K spin glass freezing due to interparticle interactions is found from both methods. Whereas Mössbauer spectra are insensitive to the fast fluctuations of cluster moments above spin glass freezing temperature, muon spin rotation in magnetic fields applied perpendicular to the polarized muon spins allows tracing the fluctuations of superparamagnetic moments. The temperature dependence of the damping of the muon spin rotation signal shows Arrhenius behavior between 10 to 100 K. Depending on the assumed shape of damping the activation energy of superparamagnetic fluctuations of cluster moments ranges between about 20 K · k B and 40 K · k B . Above about 120 K muon spin depolarization indicates diffusion and trapping of muons.

  20. Structural and magnetic properties of nanoclusters formed in III-V semiconductors

    NASA Astrophysics Data System (ADS)

    Lawniczak-Jablonska, Krystyna; Wolska, Anna; Klepka, Marcin T.

    2016-05-01

    Studies of X-ray magnetic circular dichroism (XMCD) were performed for a set of GaMnAs films with different Mn concentrations priory and after high temperature annealing (500 and 600 oC). After thermal treatment, GaMnAs samples with zinc blende structure and MnAs hexagonal nano-clusters were formed. In most of the samples, both types of clusters were detected by EXAFS studies. Dependence of the orbital and the spin moments on magnetic field were calculated from XMCD data by applying the sum rule. It was shown that both moments were much larger for MnAs nano-clusters. When these inclusions are formed even in a small amount, they dominate the XMCD signal. Interestingly, in some of samples the zinc blende GaMnAs nano-clusters were observed at a surface while in the bulk of hexagonal MnAs. Therefore, the location of magnetic ions in the host matrix is crucial for their magnetic properties. This unique information can be provided by XAS and XMCD.

  1. Manipulable GMR Effect in a δ-Doped Magnetically Confined Semiconductor Heterostructure

    NASA Astrophysics Data System (ADS)

    Jiang, Ya-Qing; Lu, Mao-Wang; Huang, Xin-Hong; Yang, Shi-Peng; Tang, Qiang

    2016-06-01

    A giant magnetoresistance (GMR) device formed by depositing two parallel nanosized ferromagnetic strips on top of a semiconductor heterostructure has been proposed theoretically (Zhai et al. in Phys Rev B 66:125305, 2002). For the sake of manipulating its performance, we introduce a tunable δ-potential into this device with the help of atomic-layer doping techniques such as molecular beam epitaxy (MBE) or metal-organic chemical-vapor deposition. We investigate theoretically the impact of such δ-doping on the magnetoresistance ratio (MR) of the GMR device. We find that, although the δ-doping is embedded in the device, a considerable GMR effect still exists due to the significant difference in electronic transmission between parallel (P) and antiparallel (AP) configurations. Moreover, the calculated results show that the MR of the GMR device varies sensitively with the weight and/or position of the δ-doping. Thus, the GMR device can be controlled by changing the δ-doping to obtain an adjustable GMR device for magnetoelectronics applications.

  2. LDRD-LW Final Report: 07-LW-041 "Magnetism in Semiconductor Nanocrystals: New Physics at the Nanoscale"

    SciTech Connect

    Meulenberg, R W; Lee, J I; McCall, S K

    2009-10-19

    The work conducted in this project was conducted with the aim of identifying and understanding the origin and mechanisms of magnetic behavior in undoped semiconductor nanocrystals (NCs), specifically those composed of CdSe. It was anticipated that the successful completion of this task would have the effect of addressing and resolving significant controversy over this topic in the literature. Meanwhile, application of the resultant knowledge was expected to permit manipulation of the magnetic properties, particularly the strength of any magnetic effects, which is of potential relevance in a range of advanced technologies. More specifically, the project was designed and research conducted with the goal of addressing the following series of questions: (1) How does the magnitude of the magnetism in CdSe NCs change with the organic molecules used to passivate their surface the NC size? i.e. Is the magnetism an intrinsic effect in the nanocrystalline CdSe (as observed for Au NCs) or a surface termination driven effect? (2) What is the chemical (elemental) nature of the magnetism? i.e. Are the magnetic effects associated with the Cd atoms or the Se atoms or both? (3) What is/are the underlying mechanism(s)? (4) How can the magnetism be controlled for further applications? To achieve this goal, several experimental/technical milestones were identified to be fulfilled during the course of the research: (A) The preparation of well characterized CdSe NCs with varying surface termination (B) Establishing the extent of the magnetism of these NCs using magnetometry (particularly using superconducting interference device [SQUID]) (C) Establishing the chemical nature of the magnetism using x-ray magnetic circular dichroism (XMCD) - the element specific nature of the technique allows identification of the element responsible for the magnetism (D) Identification of the effect of surface termination on the empty densities of states (DOS) using x-ray absorption spectroscopy (XAS

  3. Effect of magnesium substitution on the magnetic properties of diluted magnetic spinels Ni1-xMgxFe2O4

    NASA Astrophysics Data System (ADS)

    Salmi, S.; El Azhari, M.; El Grini, A.; Hourmatallah, A.; Benzakour, N.; Bouslykhane, K.; Marzouk, A.

    2017-03-01

    The magnetic properties of Ni-Mg ferrites with compositions Ni1-xMgxFe2O4, have been studied using the mean field theory and high temperature series expansion theory (HTSE), extrapolated with the Padé approximants method. The nearest neighbour super-exchange interactions for intra-sites and inter-sites of the Ni-Mg ferrites in the range 0 ≤ x ≤ 1 have been computed using the distribution method of magnetic cations. The transition temperature TC is calculated as a function of Mg concentration. The critical exponent associated with the magnetic susceptibility was then deduced. The obtained results are in good agreement with experimental results and critical exponent values are consistent with those suggested by the universality hypothesis.

  4. Novel room temperature ferromagnetic semiconductors

    SciTech Connect

    Gupta, Amita

    2004-06-01

    for Zn a 2+ state in the ZnO lattice. Ferromagnetic Resonance (FMR) technique is used to confirm the existence of ferromagnetic ordering at temperatures as high as 425K. The ab initio calculations were found to be consistent with the observation of ferromagnetism arising from fully polarized Mn 2+ state. The key to observed room temperature ferromagnetism in this system is the low temperature processing, which prevents formation of clusters, secondary phases and the host ZnO from becoming n-type. The electronic structure of the same Mn doped ZnO thin films studied using XAS, XES and RIXS, revealed a strong hybridization between Mn 3d and O 2p states, which is an important characteristic of a Dilute magnetic Semiconductor (DMS). It is shown that the various processing conditions like sintering temperature, dopant concentration and the properties of precursors used for making of DMS have a great influence on the final properties. Use of various experimental techniques to verify the physical properties, and to understand the mechanism involved to give rise to ferromagnetism is presented. Methods to improve the magnetic moment in Mn doped ZnO are also described. New promising DMS materials (such as Cu doped ZnO are explored). The demonstrated new capability to fabricate powder, pellets, and thin films of room temperature ferromagnetic semiconductors thus makes possible the realization of a wide range of complex elements for a variety of new multifunctional phenomena related to Spintronic devices as well as magneto-optic components.

  5. Semiconductor heterostructure

    NASA Technical Reports Server (NTRS)

    Hovel, Harold John (Inventor); Woodall, Jerry MacPherson (Inventor)

    1978-01-01

    A technique for fabricating a semiconductor heterostructure by growth of a ternary semiconductor on a binary semiconductor substrate from a melt of the ternary semiconductor containing less than saturation of at least one common ingredient of both the binary and ternary semiconductors wherein in a single temperature step the binary semiconductor substrate is etched, a p-n junction with specific device characteristics is produced in the binary semiconductor substrate by diffusion of a dopant from the melt and a region of the ternary semiconductor of precise conductivity type and thickness is grown by virtue of a change in the melt characteristics when the etched binary semiconductor enters the melt.

  6. Semiconductor structure

    NASA Technical Reports Server (NTRS)

    Hovel, Harold J. (Inventor); Woodall, Jerry M. (Inventor)

    1979-01-01

    A technique for fabricating a semiconductor heterostructure by growth of a ternary semiconductor on a binary semiconductor substrate from a melt of the ternary semiconductor containing less than saturation of at least one common ingredient of both the binary and ternary semiconductors wherein in a single temperature step the binary semiconductor substrate is etched, a p-n junction with specific device characteristics is produced in the binary semiconductor substrate by diffusion of a dopant from the melt and a region of the ternary semiconductor of precise conductivity type and thickness is grown by virtue of a change in the melt characteristics when the etched binary semiconductor enters the melt.

  7. Origins of large light induced voltage in magnetic tunnel junctions grown on semiconductor substrates

    SciTech Connect

    Xu, Y.; Lin, W.; Petit-Watelot, S.; Hehn, M.; Rinnert, H.; Lu, Y.; Montaigne, F.; Lacour, D.; Andrieu, S.; Mangin, S.

    2016-01-14

    Recently, the study of interactions between electron spins and heat currents has given rise to the field of “Spin Caloritronics”. Experimental studies of these interactions have shown a possibility to combine the use of heat and light to power magnetic tunnel junction (MTJ) devices. Here we present a careful study of an MTJ device on Si substrate that can be powered entirely by light. We analyze the influence of the material properties, device geometry, and laser characteristics on the electric response of the sample. We demonstrate that by engineering the MTJ and its electrical contact, a large photovoltage reaching 100 mV can be generated. This voltage originates from the Si substrate and depends on the MTJ magnetic configuration. Finally, we discuss the origin of the photo-voltage in terms of Seebeck and photovoltaic effects.

  8. Impacts of coulomb interactions on the magnetic responses of excitonic complexes in single semiconductor nanostructures.

    PubMed

    Chang, Wen-Hao; Lin, Chia-Hsien; Fu, Ying-Jhe; Lin, Ta-Chun; Lin, Hsuan; Cheng, Shuen-Jen; Lin, Sheng-Di; Lee, Chien-Ping

    2010-01-21

    We report on the diamagnetic responses of different exciton complexes in single InAs/GaAs self-assembled quantum dots (QDs) and quantum rings (QRs). For QDs, the imbalanced magnetic responses of inter-particle Coulomb interactions play a crucial role in the diamagnetic shifts of excitons (X), biexcitons (XX), and positive trions (X-). For negative trions (X-) in QDs, anomalous magnetic responses are observed, which cannot be described by the conventional quadratic energy shift with the magnetic field. The anomalous behavior is attributed to the apparent change in the electron wave function extent after photon emission due to the strong Coulomb attraction by the hole in its initial state. In QRs, the diamagnetic responses of X and XX also show different behaviors. Unlike QDs, the diamagnetic shift of XX in QRs is considerably larger than that of X. The inherent structural asymmetry combined with the inter-particle Coulomb interactions makes the wave function distribution of XX very different from that of X in QRs. Our results suggest that the phase coherence of XX in QRs may survive from the wave function localization due to the structural asymmetry or imperfections.

  9. Entanglement and manipulation of the magnetic and spin-orbit order in multiferroic Rashba semiconductors

    NASA Astrophysics Data System (ADS)

    Krempaský, J.; Muff, S.; Bisti, F.; Fanciulli, M.; Volfová, H.; Weber, A. P.; Pilet, N.; Warnicke, P.; Ebert, H.; Braun, J.; Bertran, F.; Volobuev, V. V.; Minár, J.; Springholz, G.; Dil, J. H.; Strocov, V. N.

    2016-10-01

    Entanglement of the spin-orbit and magnetic order in multiferroic materials bears a strong potential for engineering novel electronic and spintronic devices. Here, we explore the electron and spin structure of ferroelectric α-GeTe thin films doped with ferromagnetic Mn impurities to achieve its multiferroic functionality. We use bulk-sensitive soft-X-ray angle-resolved photoemission spectroscopy (SX-ARPES) to follow hybridization of the GeTe valence band with the Mn dopants. We observe a gradual opening of the Zeeman gap in the bulk Rashba bands around the Dirac point with increase of the Mn concentration, indicative of the ferromagnetic order, at persistent Rashba splitting. Furthermore, subtle details regarding the spin-orbit and magnetic order entanglement are deduced from spin-resolved ARPES measurements. We identify antiparallel orientation of the ferroelectric and ferromagnetic polarization, and altering of the Rashba-type spin helicity by magnetic switching. Our experimental results are supported by first-principles calculations of the electron and spin structure.

  10. Entanglement and manipulation of the magnetic and spin–orbit order in multiferroic Rashba semiconductors

    PubMed Central

    Krempaský, J.; Muff, S.; Bisti, F.; Fanciulli, M.; Volfová, H.; Weber, A. P.; Pilet, N.; Warnicke, P.; Ebert, H.; Braun, J.; Bertran, F.; Volobuev, V. V.; Minár, J.; Springholz, G.; Dil, J. H.; Strocov, V. N.

    2016-01-01

    Entanglement of the spin–orbit and magnetic order in multiferroic materials bears a strong potential for engineering novel electronic and spintronic devices. Here, we explore the electron and spin structure of ferroelectric α-GeTe thin films doped with ferromagnetic Mn impurities to achieve its multiferroic functionality. We use bulk-sensitive soft-X-ray angle-resolved photoemission spectroscopy (SX-ARPES) to follow hybridization of the GeTe valence band with the Mn dopants. We observe a gradual opening of the Zeeman gap in the bulk Rashba bands around the Dirac point with increase of the Mn concentration, indicative of the ferromagnetic order, at persistent Rashba splitting. Furthermore, subtle details regarding the spin–orbit and magnetic order entanglement are deduced from spin-resolved ARPES measurements. We identify antiparallel orientation of the ferroelectric and ferromagnetic polarization, and altering of the Rashba-type spin helicity by magnetic switching. Our experimental results are supported by first-principles calculations of the electron and spin structure. PMID:27767052

  11. Magnetic field influence on the transient photoresistivity of defect-induced magnetic ZnO films

    NASA Astrophysics Data System (ADS)

    Zapata, C.; Khalid, M.; Simonelli, G.; Villafuerte, M.; Heluani, S. P.; Esquinazi, P.

    2011-09-01

    Magnetic field dependent photoresistivity was measured at 280 K in ZnO ferromagnetic films grown on r-plane Al2O3 under a N2 atmosphere. A correlation between the negative magneto photoresistivity and the existence of defect-induced magnetic order was found. The effect of magnetic field on the transient photoresistivity is to slow down the recombination process enhancing the photocarriers density. The experimental results demonstrate the possibility of tuning photocarriers life time using magnetic field in diluted magnetic semiconductors.

  12. New magnetic semiconductors CuCr1.5+xSb0.5-xS4 (0<=x<=0.3)

    NASA Astrophysics Data System (ADS)

    Saifullaeva, Dilaram; Solieva, Shahlo; Muminov, Asamat

    2002-11-01

    New compounds with spinel structure CuCr1.5+xSb0.5-xS4(0<=x<=0.3) were obtained and studied in detail. All the compounds are non-degenerate semiconductores. The compounds (0<=x<=0.1) were found to have the magnetic properties characteristic for antiferromagnets. Compounds (0.2<=x<=0.3) have a spontaneous magnetization, with the Curie point of the compound with x=0.3, Tc = 334 K, being higher than room temperature. The re-entrant spin glass transition is observed in the compounds with x=0.17;0.2)

  13. Electronic structure of Fe-doped In2O3 magnetic semiconductor with oxygen vacancies: Evidence for F-center mediated exchange interaction

    NASA Astrophysics Data System (ADS)

    Hu, Shu-jun; Yan, Shi-shen; Lin, Xue-ling; Yao, Xin-xin; Chen, Yan-xue; Liu, Guo-lei; Mei, Liang-mo

    2007-12-01

    Based on the first-principles calculations, the electronic structure and magnetic properties of Fe-doped In2O3 were theoretically investigated. The presence of the predominating defects in oxide, i.e., oxygen vacancies, can lead to strong ferromagnetic coupling between the nearest neighboring Fe cations. Spin density and band-projected charge distribution in the vicinity of the oxygen vacancies reveal that the ferromagnetic exchange is mediated by the donor impurity state, which mainly consists of Fe :3d and Fe :4s electrons trapped in oxygen vacancies. Such results provide direct evidence for the F-center mediated exchange interaction in oxide-based magnetic semiconductors.

  14. Semiconductor/Piezoelectrics Hybrid Heterostructures with Highly Effective Gate-Tunable Electrotransport and Magnetic Behaviors.

    PubMed

    Chen, Lei; Zhao, Wei-Yao; Wang, Jing; Gao, Guan-Yin; Zhang, Jin-Xing; Wang, Yu; Li, Xiao-Min; Cao, Shi-Xun; Li, Xiao-Guang; Luo, Hao-Su; Zheng, Ren-Kui

    2016-10-12

    We report the epitaxial growth of oxygen deficient titanium dioxide thin films on 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (PMN-PT) single crystals and realized highly effective in situ electrostatic manipulation of electrotransport and magnetism of TiO2-δ films via gate voltages. Upon the polarization switching in the PMN-PT, the carrier density of the TiO2-δ film could be reversibly modified, resulting in a large nonvolatile resistivity modulation by ∼51% at T = 300 K, approximately 4-12 times larger than that of other transition-metal oxide film/PMN-PT structures. By taking advantage of in situ manipulation of the carrier density via gate voltages, we found that competition between the trap of electrons by the Ti(3+)-VO pairs and that by the positive polarization charges at the interface results in a significant resistivity relaxation upon the polarization switching, and revealed that magnetization is inversely correlated with the carrier density of the TiO2-δ film. Such hybrid structures combining materials with dissimilar functionalities may have potential applications in multifunctional devices which can take advantage of the useful and unique properties of both materials.

  15. Pressure Dependent Magnetoluminescence of Semiconductor Quantum Wells in CW and Pulsed Magnetic Fields

    NASA Astrophysics Data System (ADS)

    Jones, E. D.; Kim, Y.; Perry, C. H.; Tozer, S.; Rickel, D. G.

    1996-03-01

    We report on low-temperature pressure dependent magnetoluminescence measurements of a In_0.2Ga_0.8As/GaAs 80Åwide n-type single-strained-quantum well in cw (max 18T) and pulsed (max 60T) magnetic fields using a miniture diamond anvil cell. Landau level shifts were studied at 4 and 76 K with pressures ranging from ambient to about 40 kbar. The nc = 0 to nv = 0 Landau level transition was linear in magnetic field for all pressures, but there is evidence of a slope change for fields of about 20T. The pressure coefficients of the bandgap energy are the expected 9-10 meV/kbar. Also observed was the Γ-X pressure induced transition between the InGaAs Γ-point and the GaAs barrier X-point at the highest pressures. The pressure dependence of the conduction- and valence-band masses will also be discussed.

  16. Characterization of Co distribution in ZnO by x-ray magnetic circular dichroism

    NASA Astrophysics Data System (ADS)

    Zhang, Y.; Wang, Z.; Cao, J. X.

    2013-05-01

    We analyze the electronic and magnetic properties of the various atomic arrangements of Zn1-xCoxO with x = 10% using K-edge x-ray absorption and magnetic circular dichroism spectra from both measurements and first principle calculations. Significantly, the K-edge spectroscopic features of Co are highly sensitive to the local atomic arrangement, and thus can be used as a powerful tool to investigate structural properties of dilute magnetic semiconductors. We clearly showed that defects such as interstitial Co and O vacancy near to substitutional Co are present in the 10% Co doped ZnO sample. The magnetic ordering of ZnO-based diluted magnetic semiconductors is strongly correlated with the presence of oxygen vacancies. Finally, we elucidated the origin of the X-ray magnetic circular dichroism signals.

  17. Time-resolved spin-dependent processes in magnetic field effects in organic semiconductors

    NASA Astrophysics Data System (ADS)

    Peng, Qiming; Li, Xianjie; Li, Feng

    2012-12-01

    We investigated the time-resolved magnetic field effects (MFEs) in tri-(8-hydroxyquinoline)-aluminum (Alq3) based organic light-emitting diodes (OLEDs) through the transient electroluminescence (EL) method. The values of magneto-electroluminescence (MEL) decrease with the time, and the decreasing slope is proportional to the driving voltage. Specifically, negative MELs are seen when the driving voltage is high enough (V > 11 V). We propose a model to elucidate the spin-dependent processes and theoretically simulate the time-resolved MELs. In particular, this dynamic analysis of time-resolved MELs reveals that the intersystem crossing between singlet and triplet electron-hole pairs and the triplet-triplet annihilation are responsible for the time-resolved MELs at the beginning and enduring periods of the pulse, respectively.

  18. Thermodynamics of Dilute Solutions.

    ERIC Educational Resources Information Center

    Jancso, Gabor; Fenby, David V.

    1983-01-01

    Discusses principles and definitions related to the thermodynamics of dilute solutions. Topics considered include dilute solution, Gibbs-Duhem equation, reference systems (pure gases and gaseous mixtures, liquid mixtures, dilute solutions), real dilute solutions (focusing on solute and solvent), terminology, standard states, and reference systems.…

  19. CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES: Spin-Polarized Carriers Injection from Ferromagnetic Metal into Organic Semiconductor

    NASA Astrophysics Data System (ADS)

    Qiao, Shi-Zhu; Zhao, Jun-Qing; Jia, Zhen-Feng; Zhang, Tian-You

    2010-10-01

    Charge carriers in organic semiconductor are different from that of traditional inorganic semiconductor. Based on three-current model, considering electrical field effect, we present a theoretical model to discuss spin-polarized injection from ferromagnetic electrode into organic semiconductor by analyzing electrochemical potential both in ferromagnetic electrode and organic semiconductors. The calculated result of this model shows effects of electrode's spin polarization, equilibrium value of polarons ratio, interfacial conductance, bulk conductivity of materials and electrical field. It is found that we could get decent spin polarization with common ferromagnetic electrode by increasing equilibrium value of polarons ratio. We also find that large and matched bulk conductivity of organic semiconductor and electrode, small spin-dependent interfacial conductance, and enough large electrical field are critical factors for increasing spin polarization.

  20. Magnetic diffuse scattering

    SciTech Connect

    Cable, J.W.

    1987-01-01

    The diffuse scattering of neutrons from magnetic materials provides unique and important information regarding the spatial correlations of the atoms and the spins. Such measurements have been extensively applied to magnetically ordered systems, such as the ferromagnetic binary alloys, for which the observed correlations describe the magnetic moment fluctuations associated with local environment effects. With the advent of polarization analysis, these techniques are increasingly being applied to study disordered paramagnetic systems such as the spin-glasses and the diluted magnetic semiconductors. The spin-pair correlations obtained are essential in understanding the exchange interactions of such systems. In this paper, we describe recent neutron diffuse scattering results on the atom-pair and spin-pair correlations in some of these disordered magnetic systems. 56 refs.

  1. Properties of II-VI Semiconductors: Bulk Crystals, Epitaxial Films, Quantum Well Structures, and Dilute Magnetic Systems. Materials Research Society Symposium Proceedings. Volume 161

    DTIC Science & Technology

    1990-11-21

    BULK CdTe P.M. AMIRTHARAJ AND N.K. DHAR U.S. Army Center for Night Vision and Electro-Optics Fort Belvoir, VA-22060 ABSTRACT The native defects...those that contain exposed surfaces. ACKNOWLEDGEMENT The authors wish to acknowledge Mr. Philip R. Boyd of the U.S. Army Center for Night Vision and...del IPN. Apdo. Postal 14-740, 07000 Mexico, D. F. +Departamento de Fisica del Instituto de Ciencias, Universidad Aut6noma de Puebla , Apdo. Postal J-48

  2. Morphological variations of Mn-doped ZnO dilute magnetic semiconductors thin films grown by succesive ionic layer by adsorption reaction method.

    PubMed

    Balamurali, Subramanian; Chandramohan, Rathinam; Karunakaran, Marimuthu; Mahalingam, Thayan; Parameswaran, Padmanaban; Suryamurthy, Nagamani; Sukumar, Arcod Anandhakrishnan

    2013-07-01

    Transparent conducting Mn-doped ZnO thin films have been prepared by successive ionic layer by adsorption reaction (SILAR) method. The deposition conditions have been optimized based on their structure and on the formation of smoothness, adherence, and stoichiometry. The results of the studies by X-ray diffraction, scanning electron microscope (SEM), reveal the varieties of structural and morphological modifications feasible with SILAR method. The X-ray diffraction patterns confirm that the ZnO:Mn has wurtzite structure. The interesting morphological variations with dopant concentration are observed and discussed. The films' quality is comparable with those grown with physical methods and is suitable for spintronic applications.

  3. Dilutions Made Easy.

    ERIC Educational Resources Information Center

    Kamin, Lawrence

    1996-01-01

    Presents problems appropriate for high school and college students that highlight dilution methods. Promotes an understanding of dilution methods in order to prevent the unnecessary waste of chemicals and glassware in biology laboratories. (JRH)

  4. Suppression of Zeeman splitting of the energy levels of exciton-polariton condensates in semiconductor microcavities in an external magnetic field.

    PubMed

    Walker, P; Liew, T C H; Sarkar, D; Durska, M; Love, A P D; Skolnick, M S; Roberts, J S; Shelykh, I A; Kavokin, A V; Krizhanovskii, D N

    2011-06-24

    A key property of equilibrium exciton-polariton condensates in semiconductor microcavities is the suppression of the Zeeman splitting under a magnetic field. By studying magnetophotoluminescence spectra from a GaAs microcavity, we show experimentally that a similar effect occurs in a nonequilibrium polariton condensate arising from polariton parametric scattering. In this case, the quenching of Zeeman splitting is related to a phase synchronization of spin-up and spin-down polarized polariton condensates caused by a nonlinear coupling via the coherent pump state.

  5. Improvement of charge-pumping electrically detected magnetic resonance and its application to silicon metal-oxide-semiconductor field-effect transistor

    NASA Astrophysics Data System (ADS)

    Hori, Masahiro; Tsuchiya, Toshiaki; Ono, Yukinori

    2017-01-01

    Charge-pumping electrically detected magnetic resonance (CP EDMR), or EDMR in the CP mode, is improved and applied to a silicon metal-oxide-semiconductor field-effect transistor (MOSFET). Real-time monitoring of the CP process reveals that high-frequency transient currents are an obstacle to signal amplification for EDMR. Therefore, we introduce cutoff circuitry, leading to a detection limit for the number of spins as low as 103 for Si MOS interface defects. With this improved method, we demonstrate that CP EDMR inherits one of the most important features of the CP method: the gate control of the energy window of the detectable interface defects for spectroscopy.

  6. Serial Dilution Simulation Lab

    ERIC Educational Resources Information Center

    Keler, Cynthia; Balutis, Tabitha; Bergen, Kim; Laudenslager, Bryanna; Rubino, Deanna

    2010-01-01

    Serial dilution is often a difficult concept for students to understand. In this short dry lab exercise, students perform serial dilutions using seed beads. This exercise helps students gain skill at performing dilutions without using reagents, bacterial cultures, or viral cultures, while being able to visualize the process.

  7. Exploration of Porphyrin-based Semiconductors for Negative Charge Transport Applications Using Synthetic, Spectroscopic, Potentiometric, Magnetic Resonance, and Computational Methods

    NASA Astrophysics Data System (ADS)

    Rawson, Jeffrey Scott

    Organic pi-conjugated materials are emerging as commercially relevant components in electronic applications that include transistors, light-emitting diodes, and solar cells. One requirement common to all of these functions is an aptitude for accepting and transmitting charges. It is generally agreed that the development of organic semiconductors that favor electrons as the majority carriers (n-type) lags behind the advances in hole transporting (p-type) materials. This shortcoming suggests that the design space for n-type materials is not yet well explored, presenting researchers with the opportunity to develop unconventional architectures. In this regard, it is worth noting that discrete molecular materials are demonstrating the potential to usurp the preeminent positions that pi-conjugated polymers have held in these areas of organic electronics research. This dissertation describes how an extraordinary class of molecules, meso-to-meso ethyne-bridged porphyrin arrays, has been bent to these new uses. Chapter one describes vis-NIR spectroscopic and magnetic resonance measurements revealing that these porphyrin arrays possess a remarkable aptitude for the delocalization of negative charge. In fact, the miniscule electron-lattice interactions exhibited in these rigid molecules allow them to host the most vast electron-polarons ever observed in a pi-conjugated material. Chapter two describes the development of an ethyne-bridged porphyrin-isoindigo hybrid chromophore that can take the place of fullerene derivatives in the conventional thin film solar cell architecture. Particularly noteworthy is the key role played by the 5,15-bis(heptafluoropropyl)porphyrin building block in the engineering of a chromophore that, gram for gram, is twice as absorptive as poly(3-hexyl)thiophene, exhibits a lower energy absorption onset than this polymer, and yet possesses a photoexcited singlet state sufficiently energetic to transfer a hole to this polymer. Chapter three describes

  8. PREFACE: 19th International Conference on the Application of High Magnetic Fields in Semiconductor Physics and Nanotechnology (HMF-19)

    NASA Astrophysics Data System (ADS)

    Muraki, Koji; Takeyama, Shojiro

    2011-12-01

    This volume contains invited and contributed papers from the 19th International Conference on the Application of High Magnetic Fields in Semiconductor Physics and Nanotechnology (HMF-19) held in Fukuoka, Japan, from 1-6 August 2010. This conference was mainly sponsored by the Tokyo University-'Horiba International fund', which was donated by Dr Masao Horiba, the founder of Horiba Ltd. The scientific program of HMF-19 consisted of 37 invited talks, 24 contributed talks, and 83 posters, which is available from the conference homepage http://www.hmf19.iis.u-tokyo.ac.jp/index.html. Each manuscript submitted for publication in this volume has been independently reviewed. The Editor is very grateful to all the reviewers for their quick responses and helpful reports and to all the authors for their submissions and patience for the delay in the editorial process. Finally, the Editor would like to express his sincere gratitude to all the individuals involved in the conference organization and all the attendees, who made this conference so successful. Koji Muraki Conference photograph Committees Chair Conference chairS Takeyama(ISSP-UT) Conference secretary T Machida (IIS-UT) Program chair K Muraki (NTT) Local organizing chair K Oto (Chiba Univ.) Advisory Committee International Domestic L Brey (ES) T Ando (TIT) Z H Chen (CN) Y Hirayama (Tohoku Univ.) S Das Sarma (US) G Kido (NIMS) L Eaves (GB) N Miura (JP) J P Eisenstein (US) J Nitta (Tohoku Univ.) K Ensslin (CH) T Takamasu (NIMS) J Furdyna (US) G M Gusev (BR) I Kukushkin (RU) Z D Kvon (RU) G Landwehr (DE) J C Maan (NL) A H MacDonald (US) N F Oliveira Jr (BR) A Pinczuk (US) J C Portal (FR) A Sachrajda (CA) M K Sanyal(IN) R Stepniewski(PL) Program Committee Chair: K Muraki(NTT) International Domestic G Bauer (AU) H Ajiki (Osaka Univ.) G Boebinger (US) H Aoki (Hongo, UT) S Ivanov (RU) K Nomura (RIKEN) K von Klitzing (DE) T Okamoto (Hongo, UT) R Nicholas (GB) T Osada (ISSP-UT ) M Potemski (FR) N Studart (BR) U Zeitler (NL

  9. Magneto-optical Faraday rotation of semiconductor nanoparticles embedded in dielectric matrices.

    PubMed

    Savchuk, Andriy I; Stolyarchuk, Ihor D; Makoviy, Vitaliy V; Savchuk, Oleksandr A

    2014-04-01

    Faraday rotation has been studied for CdS, CdTe, and CdS:Mn semiconductor nanoparticles synthesized by colloidal chemistry methods. Additionally these materials were prepared in a form of semiconductor nanoparticles embedded in polyvinyl alcohol films. Transmission electron microscopy and atomic force microscopy analyses served as confirmation of nanocrystallinity and estimation of the average size of the nanoparticles. Spectral dependence of the Faraday rotation for the studied nanocrystals and nanocomposites is correlated with a blueshift of the absorption edge due to the confinement effect in zero-dimensional structures. Faraday rotation spectra and their temperature behavior in Mn-doped nanocrystals demonstrates peculiarities, which are associated with s, p-d exchange interaction between Mn²⁺ ions and band carriers in diluted magnetic semiconductor nanostructures.

  10. Tailoring Magnetism in Quantum Dots

    NASA Astrophysics Data System (ADS)

    Zutic, Igor; Abolfath, Ramin; Hawrylak, Pawel

    2007-03-01

    We study magnetism in magnetically doped quantum dots as a function of particle numbers, temperature, confining potential, and the strength of Coulomb interaction screening. We show that magnetism can be tailored by controlling the electron-electron Coulomb interaction, even without changing the number of particles. The interplay of strong Coulomb interactions and quantum confinement leads to enhanced inhomogeneous magnetization which persists at substantially higher temperatures than in the non-interacting case or in the bulk-like dilute magnetic semiconductors. We predict a series of electronic spin transitions which arise from the competition between the many-body gap and magnetic thermal fluctuations. Cond-mat/0612489. [1] R. Abolfath, P. Hawrylak, I. Zuti'c, preprint.

  11. Quantum size effects on spin-transfer torque in a double barrier magnetic tunnel junction with a nonmagnetic-metal (semiconductor) spacer

    NASA Astrophysics Data System (ADS)

    Daqiq, Reza; Ghobadi, Nader

    2016-07-01

    We study the quantum size effects of an MgO-based double barrier magnetic tunnel junction with a nonmagnetic-metal (DBMTJ-NM) (semiconductor (DBMTJ-SC)) spacer on the charge current and the spin-transfer torque (STT) components using non-equilibrium Green's function (NEGF) formalism. The results show oscillatory behavior due to the resonant tunneling effect depending on the structure parameters. We find that the charge current and the STT components in the DBMTJ-SC demonstrate the magnitude enhancement in comparison with the DBMTJ-NM. The bias dependence of the STT components in a DBMTJ-NM shows different behavior in comparison with spin valves and conventional MTJs. Therefore, by choosing a specific SC spacer with suitable thickness in a DBMTJ the charge current and the STT components significantly increase so that one can design a device with high STT and faster magnetization switching.

  12. Magnetically modulated laser-induced resistance effect observed in Metal-Oxide-Semiconductor structure of Cr/SiO(2)/Si.

    PubMed

    Xie, Xin; Liu, Shuai; Huang, Meizhen; Wang, Hui

    2015-09-21

    In this study, we report our finding of laser-induced resistance effect in metal-oxide-semiconductor (MOS) structure of Cr/SiO(2)/Si. Under the irradiation of a laser beam, the effect shows a large linear resistance change ratio of 92% with a spatial sensitivity of 0.79 MΩ/mm. In particular, by the application of an external magnetic field perpendicular to the Cr film, the resistance change ratio is increased to 110%. This effect is attributed to the Lorentz force acting on the photo-generated carriers in the inversion layer of MOS structures. The work suggests an approach for the development of new type magnetically modulated photoelectric devices.

  13. Enhanced photophysical properties of plasmonic magnetic metal-alloyed semiconductor heterostructure nanocrystals: a case study for the Ag@Ni/Zn1-xMgxO system.

    PubMed

    Paul, Sumana; Ghosh, Sirshendu; Saha, Manas; De, S K

    2016-05-14

    Understanding the effect of homovalent cation alloying in wide band gap ZnO and the formation of metal-semiconductor heterostructures is very important for maximisation of the photophysical properties of ZnO. Nearly monodisperse ZnO nanopyramid and Mg alloyed ZnO nanostructures have been successfully synthesized by one pot decomposition of metal stearate by using oleylamine both as activating and capping agent. The solid solubility of Mg(ii) ions in ZnO is limited to ∼30% without phase segregation. An interesting morphology change is found on increasing Mg alloying: from nanopyramids to self-assembled nanoflowers. The morphology change is explained by the oriented attachment process. The introduction of Mg into the ZnO matrix increases the band gap of the materials and also generates new zinc interstitial (Zni) and oxygen vacancy related defects. Plasmonic magnetic Ag@Ni core-shell (Ag as core and Ni as shell) nanocrystals are used as a seed material to synthesize Ag@Ni/Zn1-xMgxO complex heterostructures. Epitaxial growth is established between Ag(111) and ZnO(110) planes in the heterostructure. An epitaxial metal-semiconductor interface is very crucial for complete electron-hole (e-h) separation and enhancement of the exciton lifetime. The alloyed semiconductor-metal heterostructure is observed to be highly photocatalytically active for dye degradation as well as photodetection. Incorporation of magnetic Ni(0) makes the photocatalyst superparamagnetic at room temperature which is found to be helpful for catalyst regeneration.

  14. Realisation of magnetically and atomically abrupt half-metal/semiconductor interface: Co2FeSi0.5Al0.5/Ge(111).

    PubMed

    Nedelkoski, Zlatko; Kuerbanjiang, Balati; Glover, Stephanie E; Sanchez, Ana M; Kepaptsoglou, Demie; Ghasemi, Arsham; Burrows, Christopher W; Yamada, Shinya; Hamaya, Kohei; Ramasse, Quentin M; Hasnip, Philip J; Hase, Thomas; Bell, Gavin R; Hirohata, Atsufumi; Lazarov, Vlado K

    2016-11-21

    Halfmetal-semiconductor interfaces are crucial for hybrid spintronic devices. Atomically sharp interfaces with high spin polarisation are required for efficient spin injection. In this work we show that thin film of half-metallic full Heusler alloy Co2FeSi0.5Al0.5 with uniform thickness and B2 ordering can form structurally abrupt interface with Ge(111). Atomic resolution energy dispersive X-ray spectroscopy reveals that there is a small outdiffusion of Ge into specific atomic planes of the Co2FeSi0.5Al0.5 film, limited to a very narrow 1 nm interface region. First-principles calculations show that this selective outdiffusion along the Fe-Si/Al atomic planes does not change the magnetic moment of the film up to the very interface. Polarized neutron reflectivity, x-ray reflectivity and aberration-corrected electron microscopy confirm that this interface is both magnetically and structurally abrupt. Finally, using first-principles calculations we show that this experimentally realised interface structure, terminated by Co-Ge bonds, preserves the high spin polarization at the Co2FeSi0.5Al0.5/Ge interface, hence can be used as a model to study spin injection from half-metals into semiconductors.

  15. Realisation of magnetically and atomically abrupt half-metal/semiconductor interface: Co2FeSi0.5Al0.5/Ge(111)

    NASA Astrophysics Data System (ADS)

    Nedelkoski, Zlatko; Kuerbanjiang, Balati; Glover, Stephanie E.; Sanchez, Ana M.; Kepaptsoglou, Demie; Ghasemi, Arsham; Burrows, Christopher W.; Yamada, Shinya; Hamaya, Kohei; Ramasse, Quentin M.; Hasnip, Philip J.; Hase, Thomas; Bell, Gavin R.; Hirohata, Atsufumi; Lazarov, Vlado K.

    2016-11-01

    Halfmetal-semiconductor interfaces are crucial for hybrid spintronic devices. Atomically sharp interfaces with high spin polarisation are required for efficient spin injection. In this work we show that thin film of half-metallic full Heusler alloy Co2FeSi0.5Al0.5 with uniform thickness and B2 ordering can form structurally abrupt interface with Ge(111). Atomic resolution energy dispersive X-ray spectroscopy reveals that there is a small outdiffusion of Ge into specific atomic planes of the Co2FeSi0.5Al0.5 film, limited to a very narrow 1 nm interface region. First-principles calculations show that this selective outdiffusion along the Fe-Si/Al atomic planes does not change the magnetic moment of the film up to the very interface. Polarized neutron reflectivity, x-ray reflectivity and aberration-corrected electron microscopy confirm that this interface is both magnetically and structurally abrupt. Finally, using first-principles calculations we show that this experimentally realised interface structure, terminated by Co-Ge bonds, preserves the high spin polarization at the Co2FeSi0.5Al0.5/Ge interface, hence can be used as a model to study spin injection from half-metals into semiconductors.

  16. Realisation of magnetically and atomically abrupt half-metal/semiconductor interface: Co2FeSi0.5Al0.5/Ge(111)

    PubMed Central

    Nedelkoski, Zlatko; Kuerbanjiang, Balati; Glover, Stephanie E.; Sanchez, Ana M.; Kepaptsoglou, Demie; Ghasemi, Arsham; Burrows, Christopher W.; Yamada, Shinya; Hamaya, Kohei; Ramasse, Quentin M.; Hasnip, Philip J.; Hase, Thomas; Bell, Gavin R.; Hirohata, Atsufumi; Lazarov, Vlado K.

    2016-01-01

    Halfmetal-semiconductor interfaces are crucial for hybrid spintronic devices. Atomically sharp interfaces with high spin polarisation are required for efficient spin injection. In this work we show that thin film of half-metallic full Heusler alloy Co2FeSi0.5Al0.5 with uniform thickness and B2 ordering can form structurally abrupt interface with Ge(111). Atomic resolution energy dispersive X-ray spectroscopy reveals that there is a small outdiffusion of Ge into specific atomic planes of the Co2FeSi0.5Al0.5 film, limited to a very narrow 1 nm interface region. First-principles calculations show that this selective outdiffusion along the Fe-Si/Al atomic planes does not change the magnetic moment of the film up to the very interface. Polarized neutron reflectivity, x-ray reflectivity and aberration-corrected electron microscopy confirm that this interface is both magnetically and structurally abrupt. Finally, using first-principles calculations we show that this experimentally realised interface structure, terminated by Co-Ge bonds, preserves the high spin polarization at the Co2FeSi0.5Al0.5/Ge interface, hence can be used as a model to study spin injection from half-metals into semiconductors. PMID:27869132

  17. Microfluidic serial dilution ladder.

    PubMed

    Ahrar, Siavash; Hwang, Michelle; Duncan, Philip N; Hui, Elliot E

    2014-01-07

    Serial dilution is a fundamental procedure that is common to a large number of laboratory protocols. Automation of serial dilution is thus a valuable component for lab-on-a-chip systems. While a handful of different microfluidic strategies for serial dilution have been reported, approaches based on continuous flow mixing inherently consume larger amounts of sample volume and chip real estate. We employ valve-driven circulatory mixing to address these issues and also introduce a novel device structure to store each stage of the dilution process. The dilution strategy is based on sequentially mixing the rungs of a ladder structure. We demonstrate a 7-stage series of 1 : 1 dilutions with R(2) equal to 0.995 in an active device area of 1 cm(2).

  18. Magnetic-Polaron-Induced Enhancement of Surface Raman Scattering

    PubMed Central

    Shao, Qi; Liao, Fan; Ruotolo, Antonio

    2016-01-01

    The studies of the effects of magnetic field on surface enhanced Raman scattering (SERS) have been so far limited to the case of ferromagnetic/noble-metal, core/shell nano-particles, where the influence was always found to be negative. In this work, we investigate the influence of magnetic field on a diluted magnetic semiconductor/metal SERS system. Guided by three dimensional finite-difference time-domain simulations, a high efficient SERS substrate was obtained by diluting Mn into Au-capped ZnO, which results in an increase of the dielectric constant and, therefore, an enhancement of Raman signals. More remarkably, an increase of intensities as well as a reduction of the relative standard deviation (RSD) of Raman signals have been observed as a function of the external magnetic strength. We ascribe these positive influences to magnetic-field induced nucleation of bound magnetic polarons in the Mn doped ZnO. The combination of diluted magnetic semiconductors and SERS may open a new avenue for future magneto-optical applications. PMID:26754049

  19. Nanomechanical measurement of magnetostriction and magnetic anisotropy in (Ga,Mn)As.

    PubMed

    Masmanidis, S C; Tang, H X; Myers, E B; Li, Mo; De Greve, K; Vermeulen, G; Van Roy, W; Roukes, M L

    2005-10-28

    A GaMnAs nanoelectromechanical resonator is used to obtain the first measurement of magnetostriction in a dilute magnetic semiconductor. Resonance frequency shifts induced by field-dependent magnetoelastic stress are used to simultaneously map the magnetostriction and magnetic anisotropy constants over a wide range of temperatures. Owing to the central role of carriers in controlling ferromagnetic interactions in this material, the results appear to provide insight into a unique form of magnetoelastic behavior mediated by holes.

  20. The mathematics of dilution.

    PubMed

    Chatterjee, Barun Kumar

    2014-04-01

    The major objection to homeopathic medicine is that the doses of medicine prescribed in some cases are too dilute for any active ingredient to be present. The medicines would hence be rendered inactive, necessitating novel explanations for the action. A further examination of dilution in the light of the Langmuir equation shows that homeopathic medicines may not be as dilute as a simplistic application of Avogadro's Principle suggests, due to surface effects.

  1. The realization of half-metal and spin-semiconductor for metal adatoms on arsenene

    NASA Astrophysics Data System (ADS)

    Li, Geng; Zhao, Yinchang; Zeng, Shuming; Ni, Jun

    2016-12-01

    First-principles calculations have been performed to study the adsorption of 15 different metal adatoms on silicenelike arsenene. The adsorption energies, geometries, density of states, dipole moments, work functions, net magnetic moments and Bader charges transferred from adatoms to arsenene sheet are calculated. All of the 15 metal adatoms on arsenene have binding energies larger than cohesive energies of the bulk metal, implying that stable adsorbates can be formed. As a result of the localized states originating from adatoms, the adsorption systems show a rich variety of electronic properties, such as metal, half-metal, semiconducting, and spin-semiconducting behaviors. The Co doped arsenene displays a half-metal property. The adsorption of Cu, Ag, and Au turns semiconducting arsenene into a narrow gap spin-semiconductor. These results indicate potential applications of functionalizations of silicenelike arsenene with metal adatoms, in particular for spintronics and dilute magnetic semiconductor materials.

  2. First-principles calculations of exchange interactions, spin waves, and temperature dependence of magnetization in inverse-Heusler-based spin gapless semiconductors

    NASA Astrophysics Data System (ADS)

    Jakobsson, A.; Mavropoulos, P.; Şaşıoǧlu, E.; Blügel, S.; Ležaić, M.; Sanyal, B.; Galanakis, I.

    2015-05-01

    Employing first-principles electronic-structure calculations in conjunction with the frozen-magnon method, we calculate exchange interactions, spin-wave dispersion, and spin-wave stiffness constants in inverse-Heusler-based spin gapless semiconductor (SGS) compounds Mn2CoAl , Ti2MnAl , Cr2ZnSi , Ti2CoSi , and Ti2VAs . We find that their magnetic behavior is similar to the half-metallic ferromagnetic full-Heusler alloys, i.e., the intersublattice exchange interactions play an essential role in the formation of the magnetic ground state and in determining the Curie temperature Tc. All compounds, except Ti2CoSi , possess a ferrimagnetic ground state. Due to the finite energy gap in one spin channel, the exchange interactions decay sharply with the distance, and hence magnetism of these SGSs can be described considering only nearest- and next-nearest-neighbor exchange interactions. The calculated spin-wave dispersion curves are typical for ferrimagnets and ferromagnets. The spin-wave stiffness constants turn out to be larger than those of the elementary 3 d ferromagnets. Calculated exchange parameters are used as input to determine the temperature dependence of the magnetization and Tc of the SGSs. We find that the Tc of all compounds is much above the room temperature. The calculated magnetization curve for Mn2CoAl as well as the Curie temperature are in very good agreement with available experimental data. This study is expected to pave the way for a deeper understanding of the magnetic properties of the inverse-Heusler-based SGSs and enhance the interest in these materials for application in spintronic and magnetoelectronic devices.

  3. Electronic and magnetic properties of Mn-doped WSe2 monolayer under strain

    NASA Astrophysics Data System (ADS)

    Xin, Qianqian; Zhao, Xu; Wang, Tianxing

    2017-04-01

    Electronic and magnetic properties of Mn-doped WSe2 monolyer subject to isotropic strain are investigated using the first-principles methods based on the density functional theory. Our results indicate that Mn-doped WSe2 monolayer is a magnetic semiconductor nanomaterial with strong spontaneous magnetism without strain and the total magnetic moment of Mn-doped system is 1.038μB. We applied strain to Mn-doped WSe2 monolayer from -10% to 10%. The doped system transforms from magnetic semiconductor to half-metallic material from -10% to -2% compressive strain and from 2% to 6% tensile strain. The largest half-metallic gap is 0.450 eV at -2% compressive strain. The doped system shows metal property from 7% to 10%. Its maximum magnetic moment comes to 1.181μB at 6% tensile strain. However, the magnetic moment of system decreases to zero sharply when tensile strain arrived at 7%. Strain changes the redistribution of charges and arises to the magnetic effect. The coupling between the 3d orbital of Mn atom, 5d orbital of W atom and 4p orbital of Se atom is analyzed to explain the strong strain effect on the magnetic properties. Our studies predict Mn-doped WSe2 monolayers under strain to be candidates for thin dilute magnetic semiconductors, which is important for application in semiconductor spintronics.

  4. Voltage control of magnetocrystalline anisotropy in ferromagnetic-semiconductor-piezoelectric hybrid structures

    NASA Astrophysics Data System (ADS)

    Rushforth, A. W.; de Ranieri, E.; Zemen, J.; Wunderlich, J.; Edmonds, K. W.; King, C. S.; Ahmad, E.; Campion, R. P.; Foxon, C. T.; Gallagher, B. L.; Výborný, K.; Kučera, J.; Jungwirth, T.

    2008-08-01

    We demonstrate voltage control of the magnetic anisotropy of a (Ga,Mn)As device bonded to a piezoelectric transducer. The application of a uniaxial strain leads to a large reorientation of the magnetic easy axis, which is detected by anisotropic magnetoresistance measurements. Calculations based on the mean-field kinetic-exchange model of (Ga,Mn)As provide a microscopic understanding of the measured effect. The reported smooth voltage control of the uniaxial in-plane anisotropy, electrically induced magnetization switching, and detection of unconventional crystalline components of the anisotropic magnetoresistance illustrate the generic utility of our multiferroic system in providing device functionalities and in the research of micromagnetic and magnetotransport phenomena in diluted magnetic semiconductors.

  5. A hybrid magnetic/complementary metal oxide semiconductor three-context memory bit cell for non-volatile circuit design

    SciTech Connect

    Jovanović, B. E-mail: lionel.torres@lirmm.fr; Brum, R. M.; Torres, L.

    2014-04-07

    After decades of continued scaling to the beat of Moore's law, it now appears that conventional silicon based devices are approaching their physical limits. In today's deep-submicron nodes, a number of short-channel and quantum effects are emerging that affect the manufacturing process, as well as, the functionality of the microelectronic systems-on-chip. Spintronics devices that exploit both the intrinsic spin of the electron and its associated magnetic moment, in addition to its fundamental electronic charge, are promising solutions to circumvent these scaling threats. Being compatible with the CMOS technology, such devices offer a promising synergy of radiation immunity, infinite endurance, non-volatility, increased density, etc. In this paper, we present a hybrid (magnetic/CMOS) cell that is able to store and process data both electrically and magnetically. The cell is based on perpendicular spin-transfer torque magnetic tunnel junctions (STT-MTJs) and is suitable for use in magnetic random access memories and reprogrammable computing (non-volatile registers, processor cache memories, magnetic field-programmable gate arrays, etc). To demonstrate the potential our hybrid cell, we physically implemented a small hybrid memory block using 45 nm × 45 nm round MTJs for the magnetic part and 28 nm fully depleted silicon on insulator (FD-SOI) technology for the CMOS part. We also report the cells measured performances in terms of area, robustness, read/write speed and energy consumption.

  6. Semiconductor sensors

    NASA Technical Reports Server (NTRS)

    Gatos, Harry C. (Inventor); Lagowski, Jacek (Inventor)

    1977-01-01

    A semiconductor sensor adapted to detect with a high degree of sensitivity small magnitudes of a mechanical force, presence of traces of a gas or light. The sensor includes a high energy gap (i.e., .about. 1.0 electron volts) semiconductor wafer. Mechanical force is measured by employing a non-centrosymmetric material for the semiconductor. Distortion of the semiconductor by the force creates a contact potential difference (cpd) at the semiconductor surface, and this cpd is determined to give a measure of the force. When such a semiconductor is subjected to illumination with an energy less than the energy gap of the semiconductors, such illumination also creates a cpd at the surface. Detection of this cpd is employed to sense the illumination itself or, in a variation of the system, to detect a gas. When either a gas or light is to be detected and a crystal of a non-centrosymmetric material is employed, the presence of gas or light, in appropriate circumstances, results in a strain within the crystal which distorts the same and the distortion provides a mechanism for qualitative and quantitative evaluation of the gas or the light, as the case may be.

  7. Semiconductor photoelectrochemistry

    NASA Technical Reports Server (NTRS)

    Buoncristiani, A. M.; Byvik, C. E.

    1983-01-01

    Semiconductor photoelectrochemical reactions are investigated. A model of the charge transport processes in the semiconductor, based on semiconductor device theory, is presented. It incorporates the nonlinear processes characterizing the diffusion and reaction of charge carriers in the semiconductor. The model is used to study conditions limiting useful energy conversion, specifically the saturation of current flow due to high light intensity. Numerical results describing charge distributions in the semiconductor and its effects on the electrolyte are obtained. Experimental results include: an estimate rate at which a semiconductor photoelectrode is capable of converting electromagnetic energy into chemical energy; the effect of cell temperature on the efficiency; a method for determining the point of zero zeta potential for macroscopic semiconductor samples; a technique using platinized titanium dioxide powders and ultraviolet radiation to produce chlorine, bromine, and iodine from solutions containing their respective ions; the photoelectrochemical properties of a class of layered compounds called transition metal thiophosphates; and a technique used to produce high conversion efficiency from laser radiation to chemical energy.

  8. Enhanced magnetic and photocatalytic properties of Bi2Fe4O9 semiconductor with large exposed (001) surface

    NASA Astrophysics Data System (ADS)

    Wu, Tianli; Liu, Lin; Pi, Mingyu; Zhang, Dingke; Chen, Shijian

    2016-07-01

    Magnetic photocatalysts have attracted an increasing attention for photodegradation of organic containments and easy recycling. In this work, magnetic, single-crystalline Bi2Fe4O9 samples have been synthesized through a facile hydrothermal process and the morphologies were modulated by adjusting the Bi3+/Fe3+ precursor molar ratio and NaOH concentration. The most well crystalline Bi2Fe4O9 nanoplates were formed by self-assembled anisotropic growth along the (001) plane, with large exposed (001) surface. The Bi2Fe4O9 nanoplates exhibit excellent photocatalytic degradation of rhodamine b (RhB) under visible light irradiation with the assistant of a small amount of H2O2. The excellent photocatalytic performance of the Bi2Fe4O9 nanoplates was ascribed to the lower recombination rate of the photogenerated electrons and holes on the (001) surface, which was confirmed by detecting the hydroxyl radicals. In addition, Bi2Fe4O9 samples exhibit morphology-dependent magnetic properties. The mechanisms of morphology-dependent magnetic, photoadsorbing and photocatalytic properties of Bi2Fe4O9 crystals are discussed systematically. The magnetic Bi2Fe4O9 photocatalyst allows efficient utilization of solar energy and possible catalyst recovery via magnetically-enhanced gravity separation.

  9. Mesoporous silica beads embedded with semiconductor quantum dots and iron oxide nanocrystals: dual-function microcarriers for optical encoding and magnetic separation.

    PubMed

    Sathe, Tushar R; Agrawal, Amit; Nie, Shuming

    2006-08-15

    Mesoporous beads are promising materials for embedding functional nanoparticles because of their nanometer-sized pores and large surface areas. Here we report the development of silica microbeads embedded with both semiconductor quantum dots (QD) and iron oxide (Fe3O4) nanocrystals as a new class of dual-function carriers for optical encoding and magnetic separation. The embedding (doping) process is carried out by either simultaneous or sequential addition of quantum dots and iron oxide (Fe3O4) nanocrystals in solution. The doping process is fast and quantitative, but the incorporated iron oxide strongly attenuates the signal intensity of QD fluorescence. We find that this attenuation is not due to conventional fluorescence quenching but is caused by the broad optical absorption spectrum of mixed-valence Fe3O4. For improved biocompatibility and reduced nonspecific binding, the encoded beads are further coated with amphiphilic polymers such as octylamine poly(acrylic acid). The results indicate that the polymer-coated beads are well suited for target capturing and enrichment, yielding magnetic separation efficiencies higher than 99%. By combining the multiplexing capability of QDs with the superparamagnetic properties of iron oxide nanocrystals, this class of encoded beads is expected to find broad applications in high-throughput and multiplexed biomolecular assays.

  10. Trend of tunnel magnetoresistance and variation in threshold voltage for keeping data load robustness of metal–oxide–semiconductor/magnetic tunnel junction hybrid latches

    SciTech Connect

    Ohsawa, T.; Ikeda, S.; Hanyu, T.; Ohno, H.; Endoh, T.

    2014-05-07

    The robustness of data load of metal–oxide–semiconductor/magnetic tunnel junction (MOS/MTJ) hybrid latches at power-on is examined by using Monte Carlo simulation with the variations in magnetoresistances for MTJs and in threshold voltages for MOSFETs involved in 90 nm technology node. Three differential pair type spin-transfer-torque-magnetic random access memory cells (4T2MTJ, 6T2MTJ, and 8T2MTJ) are compared for their successful data load at power-on. It is found that the 4T2MTJ cell has the largest pass area in the shmoo plot in TMR ratio (tunnel magnetoresistance ratio) and V{sub dd} in which a whole 256 kb cell array can be powered-on successfully. The minimum TMR ratio for the 4T2MTJ in 0.9 V < V{sub dd} < 1.9 V is 140%, while the 6T2MTJ and the 8T2MTJ cells require TMR ratio larger than 170%.

  11. Effects of sintering temperature variation on microstructure and magnetic nature of Al diluted La0.7Ca0.3MnO3

    NASA Astrophysics Data System (ADS)

    Kumar, Manish; Choudhary, R. J.; Phase, D. M.

    2013-02-01

    The samples of La0.7Ca0.3Mn1-XAlXO3 (X=0,0.05,0.15) are synthesized at two different sintering temperature 1200°C and 1400°C. The phase purity of the samples is analyzed using x-ray diffraction measurements. The microstructural evolution for different sintering temperatures is carefully tracked using scanning electron microscope (SEM). Increase in grain size with increasing sintering temperature is well identified in SEM images. Variation in the magnetic nature of the samples sintered at different temperature is seen in temperature dependent magnetization M(T) measurements. M(T) results reveal that Al doped samples show strong dependence of their magnetic behavior on sintering temperature as compared to undoped La0.7Ca0.3MnO3.

  12. Negative magnetophoresis in diluted ferrofluid flow.

    PubMed

    Hejazian, Majid; Nguyen, Nam-Trung

    2015-07-21

    We report magnetic manipulation of non-magnetic particles suspended in diluted ferrofluid. Diamagnetic particles were introduced into a circular chamber to study the extent of their deflection under the effect of a non-uniform magnetic field of a permanent magnet. Since ferrofluid is a paramagnetic medium, it also experiences a bulk magnetic force that in turn induces a secondary flow opposing the main hydrodynamic flow. Sheath flow rate, particle size, and magnetic field strength were varied to examine this complex behaviour. The combined effect of negative magnetophoresis and magnetically induced secondary flow leads to various operation regimes, which can potentially find applications in separation, trapping and mixing of diamagnetic particles such as cells in a microfluidic system.

  13. Separating hyperfine from spin-orbit interactions in organic semiconductors by multi-octave magnetic resonance using coplanar waveguide microresonators

    NASA Astrophysics Data System (ADS)

    Joshi, G.; Miller, R.; Ogden, L.; Kavand, M.; Jamali, S.; Ambal, K.; Venkatesh, S.; Schurig, D.; Malissa, H.; Lupton, J. M.; Boehme, C.

    2016-09-01

    Separating the influence of hyperfine from spin-orbit interactions in spin-dependent carrier recombination and dissociation processes necessitates magnetic resonance spectroscopy over a wide range of frequencies. We have designed compact and versatile coplanar waveguide resonators for continuous-wave electrically detected magnetic resonance and tested these on organic light-emitting diodes. By exploiting both the fundamental and higher-harmonic modes of the resonators, we cover almost five octaves in resonance frequency within a single setup. The measurements with a common π-conjugated polymer as the active material reveal small but non-negligible effects of spin-orbit interactions, which give rise to a broadening of the magnetic resonance spectrum with increasing frequency.

  14. Microfluidic serial dilution circuit.

    PubMed

    Paegel, Brian M; Grover, William H; Skelley, Alison M; Mathies, Richard A; Joyce, Gerald F

    2006-11-01

    In vitro evolution of RNA molecules requires a method for executing many consecutive serial dilutions. To solve this problem, a microfluidic circuit has been fabricated in a three-layer glass-PDMS-glass device. The 400-nL serial dilution circuit contains five integrated membrane valves: three two-way valves arranged in a loop to drive cyclic mixing of the diluent and carryover, and two bus valves to control fluidic access to the circuit through input and output channels. By varying the valve placement in the circuit, carryover fractions from 0.04 to 0.2 were obtained. Each dilution process, which is composed of a diluent flush cycle followed by a mixing cycle, is carried out with no pipeting, and a sample volume of 400 nL is sufficient for conducting an arbitrary number of serial dilutions. Mixing is precisely controlled by changing the cyclic pumping rate, with a minimum mixing time of 22 s. This microfluidic circuit is generally applicable for integrating automated serial dilution and sample preparation in almost any microfluidic architecture.

  15. Structural, electronic, vibrational and dielectric properties of selected high-shape K semiconductor oxides

    NASA Astrophysics Data System (ADS)

    Scolfaro, L. M. R.; Leite Alves, H. W.; Borges, P. D.; Garcia, J. C.; da Silva, E. F., Jr.

    2014-10-01

    The semiconductor oxides SnO2, HfO2, ZrO2, TiO2 and SrTiO3 are interesting materials for applications as high-K dielectric gate materials in silicon-based devices and spintronics, among others. Here we review our theoretical work about the structural, electronic and vibrational properties of these oxides in their most stable structural phases, including dielectric properties as derived from the electronic structure taking into account the lattice contribution. Finally, we address the recent role played by the presence of transition metal atoms in semiconductor oxides, considering in particular SnO2 as an example in forming diluted magnetic alloys.

  16. Growth and structural analysis of diluted magnetic oxide Co-doped CeO 2-δ films deposited on Si and SrTiO 3 (1 0 0)

    NASA Astrophysics Data System (ADS)

    Zheng, Y.; Vodungbo, B.; Vidal, F.; Selmane, M.; Demaille, D.

    2008-07-01

    The diluted magnetic oxide, Co-doped CeO 2-δ, displays ferromagnetism at room temperature [A. Tiwari, V.M. Bhosle, S. Ramachandran, N. Sudhakar, J. Narayan, S. Budak, A. Gupta, Appl. Phys. Lett. 88 (2006) 142511; B. Vodungbo, Y. Zheng, F. Vidal, D. Demaille, V.H. Etgens, D.H. Mosca, Appl. Phys. Lett. 90 (2007) 062510]. For this study, Co-doped CeO 2-δ thin films were grown on silicon and SrTiO 3 substrates by pulsed laser deposition. Their structure was analyzed using X-ray diffraction and transmission electron microscopy. On native silicon wafer, the films are textured. The preferential orientation is CeO 2 (1 0 0) for a growth under oxygen ambient (0.05 mbar) and CeO 2 (1 1 1) for a growth under vacuum (10 -6 mbar). When a buffer layer of CeO 2 is previously deposited under oxygen ambient, the films adopt the CeO 2 (1 0 0) preferential orientation, even if subsequent growth is carried out under vacuum. On SrTiO 3 (1 0 0), the films are epitaxied under oxygen ambient or under vacuum with an oxygen-grown CeO 2 buffer layer. In epitaxial films grown under vacuum, increasing contents of Co atoms (below 7%) induce an expansion of the CeO 2 unit cell and a decrease of crystalline order. The relationship between the structural order and the magnetic behaviour, in particular the magnetic anisotropy, is discussed. The present study suggests that the ferromagnetic behaviour is not related to grain boundaries and that the epitaxy strains are not responsible for the magnetic anisotropy. This strongly supports a ferromagnetism related to point defects (oxygen vacancies) in Co-doped CeO 2-δ films.

  17. Low temperature, high magnetic field investigations of the nature of magnetism in the molecular semiconductor β- cobalt phthalocyanine (C32H16CoN8)

    NASA Astrophysics Data System (ADS)

    Wang (王正君), Zhengjun; Lee, M.; Choi, E. S.; Poston, J.; Seehra, M. S.

    2016-06-01

    Results from detailed investigations of the magnetic properties of a powder sample of β-CoPc for the temperatures T=0.4 K to 300 K and in magnetic fields H up to 90 kOe are reported. X-ray diffraction confirmed the β-phase and scanning electron microscopy showed plate-like morphology of the sample. For T>3 K, the data of magnetic susceptibility χ vs. T fit the Curie-Weiss (CW) law yielding θ=-2.5 K, μ=2.16 μB per Co2+ and g=2.49 for spin S=1/2 of the low spin-state of Co2+. However for T<3 K, the χ vs. T data deviates from the CW law yielding a peak in χ at Tmax=1.9 K. It is shown that the χ vs. T data from 0.4 K to 300 K fits well with the predictions of the Bonner-Fisher (BF) model for S=1/2 Heisenberg linear chain antiferromagnet with the Co2+-Co2+ exchange J/kB = -1.5 K (Ĥ=-2J Σ Si•Si+1). The data of magnetization M vs. H at T=1 K agrees with the predictions of the BF model with J/kB=-1.5 K, yielding saturation magnetization MS=12.16 emu/g above 60 kOe corresponding to complete alignment of the spins.

  18. Magnetic studies reveal near-perfect paramagnetism in the molecular semiconductor vanadyl phthalocyanine (C32H16N8VO)

    NASA Astrophysics Data System (ADS)

    Wang, Zhengjun; Pi, Li; Seehra, Mohindar S.; Bindra, Jasleen; van Tol, Hans; Dalal, Naresh S.

    2017-01-01

    Temperature (0.5-300 K) and magnetic field (H up to 90 kOe) dependences of the magnetization (M) of a powder sample of vanadyl phthalocyanine (VOPc) having the Phase II-triclinic structure are measured and analyzed. The data of χ = M/H vs. T measured in H = 1 kOe fit the modified Curie-Weiss (CW) law, χ = χo+C/(T-θ), with C = 6.266×10-4 emuK/gOe, θ = -0.1 K and χo = -9.3×10-7 emu/gOe. The Curie constant C yields magnetic moment μ = 1.704 μB, S = 1/2, and g = 1.967 characteristic of VO2+. The magnitude of θ = -0.1 K signifying very weak inter-ion antiferromagnetic exchange coupling is supported by the analysis of the variable frequency (9.8-336 GHz) electron paramagnetic resonance data. The isothermal data of M vs. H at ten temperatures between 0.5 K and 300 K when plotted as M vs. H/(T+0.1) collapses on to a single curve given by M = Motanh {gμBH/[2kB(T+0.1)]} with Mo = NgμBS = 9.48 emu/g expected for S = 1/2 system, thus signifying near perfect paramagnetism in VOPc.

  19. Fabrication and characterization of magnetically tunable metal-semiconductor schottky diode using barium hexaferrite thin film on gold

    NASA Astrophysics Data System (ADS)

    Kaur, Jotinder; Sharma, Vinay; Sharma, Vipul; Veerakumar, V.; Kuanr, Bijoy K.

    2016-05-01

    Barium Hexaferrite (BaM) is an extensively studied magnetic material due to its potential device application. In this paper, we study Schottky junction diodes fabricated using gold and BaM and demonstrate the function of a spintronic device. Gold (50 nm)/silicon substrate was used to grow the BaM thin films (100-150 nm) using pulsed laser deposition. I-V characteristics were measured on the Au/BaM structure sweeping the voltage from ±5 volts. The forward and reverse bias current-voltage curves show diode like rectifying characteristics. The threshold voltage decreases while the output current increases with increase in the applied external magnetic field showing that the I-V characteristics of the BaM based Schottky junction diodes can be tuned by external magnetic field. It is also demonstrated that, the fabricated Schottky diode can be used as a half-wave rectifier, which could operate at high frequencies in the range of 1 MHz compared to the regular p-n junction diodes, which rectify below 10 kHz. In addition, it is found that above 1 MHz, Au/BaM diode can work as a rectifier as well as a capacitor filter, making the average (dc) voltage much larger.

  20. Helium dilution refrigeration system

    DOEpatents

    Roach, P.R.; Gray, K.E.

    1988-09-13

    A helium dilution refrigeration system operable over a limited time period, and recyclable for a next period of operation is disclosed. The refrigeration system is compact with a self-contained pumping system and heaters for operation of the system. A mixing chamber contains [sup 3]He and [sup 4]He liquids which are precooled by a coupled container containing [sup 3]He liquid, enabling the phase separation of a [sup 3]He rich liquid phase from a dilute [sup 3]He-[sup 4]He liquid phase which leads to the final stage of a dilution cooling process for obtaining low temperatures. The mixing chamber and a still are coupled by a fluid line and are maintained at substantially the same level with the still cross sectional area being smaller than that of the mixing chamber. This configuration provides maximum cooling power and efficiency by the cooling period ending when the [sup 3]He liquid is depleted from the mixing chamber with the mixing chamber nearly empty of liquid helium, thus avoiding unnecessary and inefficient cooling of a large amount of the dilute [sup 3]He-[sup 4]He liquid phase. 2 figs.

  1. Helium dilution refrigeration system

    DOEpatents

    Roach, Patrick R.; Gray, Kenneth E.

    1988-01-01

    A helium dilution refrigeration system operable over a limited time period, and recyclable for a next period of operation. The refrigeration system is compact with a self-contained pumping system and heaters for operation of the system. A mixing chamber contains .sup.3 He and .sup.4 He liquids which are precooled by a coupled container containing .sup.3 He liquid, enabling the phase separation of a .sup.3 He rich liquid phase from a dilute .sup.3 He-.sup.4 He liquid phase which leads to the final stage of a dilution cooling process for obtaining low temperatures. The mixing chamber and a still are coupled by a fluid line and are maintained at substantially the same level with the still cross sectional area being smaller than that of the mixing chamber. This configuration provides maximum cooling power and efficiency by the cooling period ending when the .sup.3 He liquid is depleted from the mixing chamber with the mixing chamber nearly empty of liquid helium, thus avoiding unnecessary and inefficient cooling of a large amount of the dilute .sup.3 He-.sup.4 He liquid phase.

  2. Dilution Zone Mixing

    NASA Technical Reports Server (NTRS)

    Holdeman, J. D.

    1983-01-01

    Studies to characterize dilution zone mixing; experiments on the effects of free-stream turbulence on a jet in crossflow; and the development of an interactive computer code for the analysis of the mixing of jets with a confined crossflow are reviewed.

  3. Dilution, Concentration, and Flotation

    ERIC Educational Resources Information Center

    Liang, Ling; Schmuckler, Joseph S.

    2004-01-01

    As both classroom teaching practice and literature show, many students have difficulties learning science concepts such as density. Here are some investigations that identify the relationship between density and floating through experimenting with successive dilution of a liquid, or the systematic change of concentration of a saltwater solution.…

  4. Magnetic dilution of the iron sublattice in CoFe{sub 2-x}Sc{sub x}O{sub 4} (0{<=}x{<=}1)

    SciTech Connect

    Lefevre, C.; Roulland, F.; Viart, N.; Greneche, J.M.; Pourroy, G.

    2010-11-15

    Substitution of Fe for Sc in CoFe{sub 2}O{sub 4} spinel structure is presented. All CoFe{sub 2-x}Sc{sub x}O{sub 4} compounds crystallize in the spinel type structure (space group Fd3-bar m). By using X-ray diffraction studies, magnetic measurements and in-field {sup 57}Fe Moessbauer spectrometry, the limit of substitution has been determined to be equal to x=0.56. An increase in the cell parameter and the strains and a decrease in the apparent crystallites size are observed. For x>0.3, a partial oxidation of cobalt is evidenced and Co{sup 3+} is stabilized in the structure. A ferromagnetic behavior has been observed for all investigated compounds. As x increases, the Curie temperature and the hyperfine fields decrease. Following the Stephenson model, the diminution of T{sub C} is ascribed to a decrease of the main J{sub AB} interaction. -- Graphical abstract: Evolution of the cell parameters, the magnetic properties and the Moessbauer spectra in CoFe{sub 2-r}Sc{sub r}O{sub 4} (0{<=}r{<=}1). Display Omitted

  5. Magnetism, half-metallicity and electrical transport properties of V- and Cr-doped semiconductor SnTe: A theoretical study

    SciTech Connect

    Liu, Y.; Bose, S. K.; Kudrnovský, J.

    2013-12-07

    This work presents results for the electronic structure, magnetic properties, and electrical resistivity of the semiconductor SnTe doped with 3d transition metals V and Cr. From the standpoint of potential application in spintronics, we look for half-metallic states and analyze their properties in both rock salt and zinc blende structures using ab initio electronic structure methods. In both cases, it is the Sn-sublattice that is doped with the transition metals, as has been the case with experiments performed so far. We find four half-metallic compounds at their optimized cell volumes. Results of exchange interactions and the Curie temperature are presented and analyzed for all the relevant cases. Resistivity calculation based on Kubo-Greenwood formalism shows that the resistivities of these alloys due to transition metal doping of the Sn-sublattice may vary, in most cases, from typical liquid metal or metallic glass value to 2–3 times higher. 25% V-doping of the Sn-sublattice in the rock salt structure gives a very high resistivity, which can be traced to high values of the lattice parameter resulting in drastically reduced hopping or diffusivity of the states at the Fermi level.

  6. Modeling of ferromagnetic semiconductor devices for spintronics

    NASA Astrophysics Data System (ADS)

    Lebedeva, N.; Kuivalainen, P.

    2003-06-01

    We develop physical models for magnetic semiconductor devices, where a part of the device structure consists of a ferromagnetic semiconductor layer. First we calculate the effect of the exchange interaction between the charge carrier spins and the spins of the localized magnetic electrons on the electronic states, recombination processes, and charge transport in ferromagnetic semiconductors such as (Ga,Mn)As. Taking into account, e.g., the splitting of the conduction and valence bands due to the exchange interaction, we model the electrical characteristics of the basic magnetic semiconductor devices such as Schottky diodes consisting of a nonmagnetic metal/ferromagnetic semiconductor interface, pn diodes consisting of a ferromagnetic/nonmagnetic junction and bipolar transistors having a ferromagnetic emitter. The models predict that at temperatures close to the Curie temperature TC the electrical properties of the magnetic semiconductor devices become strongly dependent on the average spin polarization of the magnetic atoms. A feature in the models is that many device parameters such as diffusion lengths or potential barriers become spin dependent in magnetic semiconductor devices. In a ferromagnetic Schottky diode the sensitivity of the device current I to the external magnetic field may be as large as (∂I/∂B)I-1≈1/T at temperatures close to TC. In a ferromagnetic pn diode both the ideal and recombination currents become magnetic field dependent. In a ferromagnetic bipolar transistor the current gain shows the same sensitivity to the spin polarization as the dc current in the ferromagnetic pn diodes. According to our model calculations optimal structures showing the largest magnetization dependence of the electrical characteristics in III-V ferromagnetic semiconductor devices would be those where the magnetic side of the junction is of n type.

  7. Magnetism, Magnetic Materials and their Applications III - Proceedings of the III Latin American Workshop

    NASA Astrophysics Data System (ADS)

    Leccabue, F.; Sagredo, V.

    1996-08-01

    The Table of Contents for the full book PDF is as follows: * Preface * Section I: Fundamental, Techniques and Materials * Magnetism in finite size Ising aggregates * Magnetic anisotropy in thin films * Magnetocrystalline anisotropy in rare earth intermetallics * Ferromagnetism vs Kondo effect in normal and superconducting CeTyX4-y * Magnetic phase transition and magnetocrystalline anisotropy of rare-earth transition-metal alloys * Giant magnetoresistance and related effects in multilayer and granular magnetic materials for practical applications * Magnetic properties of dilute PdMn alloys * TbFe amorphous thin films. Structural, magnetic and magnetoelastic studies * Nanophase exchange coupled alloys with enhanced hard magnetic properties * Exchange interactions in ferrimagnetic rare earth-transition metal multilayers * Superparamagnetic relaxation in interacting γ-Fe2O3 particles * Magnetic circular X-ray dichroism * Non-frustrated domains in Ising lattices with competing interactions * Thermomagnetic and X-ray diffraction analysis of Nd3Fe29-xTix and (Nd1-xYx)3Fe27.3Ti1.7 alloys * Electron paramagnetic resonance above the ordering temperature in La1-xCaxMnO3+δ * Spin-polarisation at Cr/Fe and Mn/Fe interfaces * Interplay of segregation, phase separation and magnetism in cobalt-copper slabs * High temperature behaviour of amorphous and nanocrystalline soft magnetic materials * Preparation of magnetic oxide thin films * Magnetic interactions in enhanced-remanence permanent magnets * Section II: Poster Session : Fundamental, Techniques and Materials * Magnetic properties in inorganic materials * Thermoreflactance measurements on Cd1-xCoxSe magnetic semiconductors * Analytical solutions of the NCA equations for the Coqblin-Schrieffer model in the zero temperature limit * Magneto-structural and spectroscopic investigation of MnxCd1-xIn2Te4 solid solutions * Magnetic after-effect processes in barium hexagonal ferrites * Electron paramagnetic resonance in PtFe alloys

  8. Automatic diluter for bacteriological samples.

    PubMed Central

    Trinel, P A; Bleuze, P; Leroy, G; Moschetto, Y; Leclerc, H

    1983-01-01

    The described apparatus, carrying 190 tubes, allows automatic and aseptic dilution of liquid or suspended-solid samples. Serial 10-fold dilutions are programmable from 10(-1) to 10(-9) and are carried out in glass tubes with screw caps and split silicone septa. Dilution assays performed with strains of Escherichia coli and Bacillus stearothermophilus permitted efficient conditions for sterilization of the needle to be defined and showed that the automatic dilutions were as accurate and as reproducible as the most rigorous conventional dilutions. Images PMID:6338826

  9. High-κ GdTixOy sensing membrane-based electrolyte-insulator-semiconductor with magnetic nanoparticles as enzyme carriers for protein contamination-free glucose biosensing.

    PubMed

    Wu, Min-Hsien; Yang, Hung-Wei; Hua, Mu-Yi; Peng, Yen-Bo; Pan, Tung-Ming

    2013-09-15

    This paper reports an electrolyte-insulator-semiconductor (EIS) device featuring a novel high-κ GdTixOy sensing membrane for high-performance pH sensing and glucose biosensing. The effect of the annealing temperature (700, 800, or 900°C) on the sensing properties of the GdTixOy membranes was investigated. The GdTixOy EIS device annealed at 900°C exhibited the greatest pH sensing performance, including the highest sensitivity (62.12mV/pH), the smallest hysteresis voltage (5mV), and the lowest drift rate (0.4mV/h), presumably because of its well-crystallized GdTixOy structure. To overcome the problems typically encountered during the practical application of biosensors (e.g., protein adsorption; preservation of enzymatic activity), we employed Fe3O4-based magnetic nanoparticles (MNPs) as enzyme carriers. The adsorption of serum protein on the unmodified sensing membrane led to poor EIS-based pH sensing (r(2)=0.71); the performance was greatly improved, however, after attaching the MNPs to the sensing membrane, thereby blocking protein adsorption significantly (by 98%) and allowing excellent pH sensing (r(2)=0.99). Moreover, we prepared a hybrid configuration of the proposed GdTixOy membrane-EIS, with magnetically attached glucose oxidase-immobilized MNPs, for glucose biosensing. The use of MNPs as enzyme carriers effectively preserved the enzymatic activity of glucose oxidase, with 45.3% of the original enzymatic activity retained after 120h of storage at 4°C (compared with complete loss of the free enzyme's activity under the same storage conditions). In addition, the proposed biosensor exhibited superior detection sensitivity of 11.03mV/mM relative to that (8.17mV/mM) obtained using the conventional enzyme immobilization method. Finally, we established the accuracy of the proposed method for blood glucose measurement; gratifyingly, blood glucose detection was comparable with the high-sensitivity glucose quantification obtained using a commercial glucose assay

  10. Magnet-in-the-Semiconductor Nanomaterials: High Electron Mobility in All-Inorganic Arrays of FePt/CdSe and FePt/CdS Core-Shell Heterostructures.

    PubMed

    Son, Jae Sung; Lee, Jong-Soo; Shevchenko, Elena V; Talapin, Dmitri V

    2013-06-06

    We report a colloidal synthesis and electrical and magnetotransport properties of multifunctional "magnet-in-the-semiconductor" nanostructures composed of FePt core and CdSe or CdS shell. Thin films of all-inorganic FePt/CdSe and FePt/CdS core-shell nanostructures capped with In2Se4(2-) molecular chalcogenide (MCC) ligands exhibited n-type charge transport with high field-effect electron mobility of 3.4 and 0.02 cm(2)/V·s, respectively. These nanostructures also showed a negative magnetoresistance characteristic for spin-dependent tunneling. We discuss the mechanism of charge transport and gating in the arrays of metal/semiconductor core-shell nanostructures.

  11. Dispersion serial dilution methods using the gradient diluter device.

    PubMed

    Walling, Leslie; Schulz, Craig; Johnson, Michael

    2012-12-01

    A solute aspirated into a prefilled tube of diluent undergoes a dilution effect known as dispersion. Traditionally the effects of dispersion have been considered a negative consequence of using liquid-filled fixed-tip liquid handlers. We present a novel device and technique that utilizes the effects of dispersion to the benefit of making dilutions. The device known as the Gradient Diluter extends the dilution range of practical serial dilutions to six orders of magnitude in final volumes as low as 10 μL. Presented are the device, dispersion methods, and validation tests using fluorescence detection of sulforhodamine and the high-performance liquid chromatography/ultraviolet detection of furosemide. In addition, a T-cell inhibition assay of a relevant downstream protein is used to demonstrate IC(50) curves made with the Gradient Diluter compare favorably with those generated by hand.

  12. Carrier-dependent magnetic anisotropy of cobalt doped titanium dioxide

    PubMed Central

    Shao, Bin; Feng, Min; Zuo, Xu

    2014-01-01

    Using first-principles calculations, we predict that the magnetic anisotropy energy of Co-doped TiO2 sensitively depends on carrier accumulation. This magnetoelectric phenomenon provides a potential route to a direct manipulation of the magnetization direction in diluted magnetic semiconductor by external electric-fields. We calculate the band structures and reveal the origin of the carrier-dependent magnetic anisotropy energy in k-space. It is shown that the carrier accumulation shifts the Fermi energy, and consequently, regulates the competing contributions to the magnetic anisotropy energy. The calculations provide an insight to understanding this magnetoelectric phenomenon, and a straightforward way to search prospective materials for electrically controllable spin direction of carriers. PMID:25510846

  13. Production and distribution of dilute species in semiconducting materials

    SciTech Connect

    James, Ralph B.; Camarda, Giuseppe; Bolotnikov, Aleksey E.; Hossain, Anwar; Yang, Ge; Kim, Kihyun

    2016-09-06

    Technologies are described effective to implement systems and methods of producing a material. The methods comprise receiving a tertiary semiconductor sample with a dilute species. The sample has two ends. The first end of the sample includes a first concentration of the dilute species lower than a second concentration of the dilute species in the second end of the sample. The method further comprises heating the sample in a chamber. The chamber has a first zone and a second zone. The first zone having a first temperature higher than a second temperature in the second zone. The sample is orientated such that the first end is in the first zone and the second end is in the second zone.

  14. Planning a serial dilution test with multiple dilutions.

    PubMed

    Blodgett, Robert J

    2009-06-01

    The dilutions used in a serial dilution test determine which concentrations it can estimate well. Two criteria help to select how many and which dilutions to use. The first criterion is a low probability of outcomes with either all growth or all non-growth tubes at the concentrations of interest. The second criterion considers how far the estimated concentration (MPN) is likely to be from the actual concentration.

  15. Ab-initio study of structural, electronic and magnetic properties of CdTe doped transition metal Co

    NASA Astrophysics Data System (ADS)

    Zitouni, A.; Bentata, Samir; Benstaali, W.; Abbar, B.

    2014-07-01

    The full potential linear augmented plane wave (FPLAPW) based on density-functional theory (DFT) is employed to study the structural, electronic and magnetic properties of transition metal Co doped CdTe. We have analyzed the structural parameters, charge and spin densities, total and partial densities of states within the generalized gradient approximation (GGA). The results show a Half-Metallic Dilute Magnetic Semiconductors (HM-DMS) character with an important magnetic moment. The results obtained, make the CoxCd1-xTe a potential promising candidate for application in spintronics.

  16. Dilution jet mixing program

    NASA Technical Reports Server (NTRS)

    Srinivasan, R.; Coleman, E.; Johnson, K.

    1984-01-01

    Parametric tests were conducted to quantify the mixing of opposed rows of jets (two-sided injection) in a confined cross flow. Results show that jet penetrations for two sided injections are less than that for single-sided injections, but the jet spreading rates are faster for a given momentum ratio and orifice plate. Flow area convergence generally enhances mixing. Mixing characteristics with asymmetric and symmetric convergence are similar. For constant momentum ratio, the optimum S/H(0) with in-line injections is one half the optimum value for single sided injections. For staggered injections, the optimum S/H(0) is twice the optimum value for single-sided injection. The correlations developed predicted the temperature distributions within first order accuracy and provide a useful tool for predicting jet trajectory and temperature profiles in the dilution zone with two-sided injections.

  17. Lattice location and local magnetism of recoil implanted Fe impurities in wide and narrow band semiconductors CdTe, CdSe, and InSb: Experiment and theory

    SciTech Connect

    Mohanta, S. K.; Mishra, S. N.

    2014-05-07

    Employing the time differential perturbed angular distribution method, we have measured local susceptibility and spin relaxation rate of {sup 54}Fe nuclei implanted in III-V and II-VI semiconductors, CdTe, CdSe, and InSb. The magnetic response of Fe, identified to occupy the metal as well as the semi-metal atom sites, exhibit Curie-Weiss type susceptibility and Korringa like spin relaxation rate, revealing the existence of localized moments with small spin fluctuation temperature. The experimental results are supported by first principle electronic structure calculations performed within the frame work of density functional theory.

  18. Diamagnetic excitons in semiconductors (Review)

    NASA Astrophysics Data System (ADS)

    Seisyan, R. P.

    2016-05-01

    Optical properties of semiconductor crystals in the presence of a high magnetic field have been considered. The field turn-on gives rise to oscillations of the optical-absorption edge or, more specifically, the formation of a complex absorption spectrum with a periodic structure, referred to as the spectrum of "diamagnetic excitons." Such spectra appear a source of the most accurate knowledge about the band structure of semiconductors. Moreover, these spectra can be used for simulating the low-dimensional state in semiconductors and possible interpretation of the emission spectra of neutron stars. The proposed analytical review is based on extensive experimental and theoretical data contained mostly in cited original works of the author with colleagues.

  19. Possible Room-Temperature Ferromagnetism in Self-Assembled Ensembles of Paramagnetic and Diamagnetic Molecular Semiconductors.

    PubMed

    Dhara, Barun; Tarafder, Kartick; Jha, Plawan K; Panja, Soumendra N; Nair, Sunil; Oppeneer, Peter M; Ballav, Nirmalya

    2016-12-15

    Owing to long spin-relaxation time and chemically customizable physical properties, molecule-based semiconductor materials like metal-phthalocyanines offer promising alternatives to conventional dilute magnetic semiconductors/oxides (DMSs/DMOs) to achieve room-temperature (RT) ferromagnetism. However, air-stable molecule-based materials exhibiting both semiconductivity and magnetic-order at RT have so far remained elusive. We present here the concept of supramolecular arrangement to accomplish possibly RT ferromagnetism. Specifically, we observe a clear hysteresis-loop (Hc ≈ 120 Oe) at 300 K in the magnetization versus field (M-H) plot of the self-assembled ensembles of diamagnetic Zn-phthalocyanine having peripheral F atoms (ZnFPc; S = 0) and paramagnetic Fe-phthalocyanine having peripehral H atoms (FePc; S = 1). Tauc plot of the self-assembled FePc···ZnFPc ensembles showed an optical band gap of ∼1.05 eV and temperature-dependent current-voltage (I-V) studies suggest semiconducting characteristics in the material. Using DFT+U quantum-chemical calculations, we reveal the origin of such unusual ferromagnetic exchange-interaction in the supramolecular FePc···ZnFPc system.

  20. Electric-field controlled ferromagnetism in MnGe magnetic quantum dots.

    PubMed

    Xiu, Faxian; Wang, Yong; Zou, Jin; Wang, Kang L

    2011-01-01

    Electric-field control of ferromagnetism in magnetic semiconductors at room temperature has been actively pursued as one of the important approaches to realize practical spintronics and non-volatile logic devices. While Mn-doped III-V semiconductors were considered as potential candidates for achieving this controllability, the search for an ideal material with high Curie temperature (T(c)>300 K) and controllable ferromagnetism at room temperature has continued for nearly a decade. Among various dilute magnetic semiconductors (DMSs), materials derived from group IV elements such as Si and Ge are the ideal candidates for such materials due to their excellent compatibility with the conventional complementary metal-oxide-semiconductor (CMOS) technology. Here, we review recent reports on the development of high-Curie temperature Mn(0.05)Ge(0.95) quantum dots (QDs) and successfully demonstrate electric-field control of ferromagnetism in the Mn(0.05)Ge(0.95) quantum dots up to 300 K. Upon the application of gate-bias to a metal-oxide-semiconductor (MOS) capacitor, the ferromagnetism of the channel layer (i.e. the Mn(0.05)Ge(0.95) quantum dots) was modulated as a function of the hole concentration. Finally, a theoretical model based upon the formation of magnetic polarons has been proposed to explain the observed field controlled ferromagnetism.

  1. Stress in dilute suspensions

    NASA Technical Reports Server (NTRS)

    Passman, Stephen L.

    1989-01-01

    Generally, two types of theory are used to describe the field equations for suspensions. The so-called postulated equations are based on the kinetic theory of mixtures, which logically should give reasonable equations for solutions. The basis for the use of such theory for suspensions is tenuous, though it at least gives a logical path for mathematical arguments. It has the disadvantage that it leads to a system of equations which is underdetermined, in a sense that can be made precise. On the other hand, the so-called averaging theory starts with a determined system, but the very process of averaging renders the resulting system underdetermined. A third type of theory is proposed in which the kinetic theory of gases is used to motivate continuum equations for the suspended particles. This entails an interpretation of the stress in the particles that is different from the usual one. Classical theory is used to describe the motion of the suspending medium. The result is a determined system for a dilute suspension. Extension of the theory to more concentrated systems is discussed.

  2. Voltage-controlled spin selection in a magnetic resonant tunneling diode.

    PubMed

    Slobodskyy, A; Gould, C; Slobodskyy, T; Becker, C R; Schmidt, G; Molenkamp, L W

    2003-06-20

    We have fabricated all II-VI semiconductor resonant tunneling diodes based on the (Zn,Mn,Be)Se material system, containing dilute magnetic material in the quantum well, and studied their current-voltage characteristics. When subjected to an external magnetic field the resulting spin splitting of the levels in the quantum well leads to a splitting of the transmission resonance into two separate peaks. This is interpreted as evidence of tunneling transport through spin polarized levels, and could be the first step towards a voltage controlled spin filter.

  3. Structural and Magnetic Analysis of Nanocrystalline Lead Europium Sulfide (PbxEuyS)

    SciTech Connect

    Somarajan, Suseela; Harrison, Melissa A; Koktysh, Dmitry S.; He, Weidong; Stillwell, Ryan L; Harl, Bobby; Schmidt, Ben; Rogers, Bridget; Payzant, E Andrew; Dickerson, II, James H.

    2012-01-01

    The authors report the synthesis of nanocrystalline, alloyed PbEuS, a potentially important dilute magnetic semiconductor. The thermolysis of mixed precursors has been adapted for the formation of homogeneous alloyed nanocrystals. X-ray diffraction and magnetization measurements of ternary PbEuS nanocrystals provide convincing evidence that no phase separation occurs in these nanomaterials for europium concentrations up to x = 0.17. X-ray photoelectron spectroscopy provides the atomic composition for PbEuS alloy nanocrystals juxtaposed with the ratio of the starting precursors.

  4. A review of thermal processing in the subsecond range: semiconductors and beyond

    NASA Astrophysics Data System (ADS)

    Rebohle, Lars; Prucnal, Slawomir; Skorupa, Wolfgang

    2016-10-01

    Thermal processing in the subsecond range comprises modern, non-equilibrium annealing techniques which allow various material modifications at the surface without affecting the bulk. Flash lamp annealing (FLA) is one of the most diverse methods for short-time annealing with applications ranging from the classical field of semiconductor doping to the treatment of polymers and flexible substrates. It still continues to extend its use to other material classes and applications, and is becoming of interest for an increasing number of users. In this review we present a short, but comprehensive and consistent picture of the current state-of-the-art of FLA, sometimes also called pulsed light sintering. In the first part we take a closer look at the physical and technological background, namely the electrical and optical specifications of flash lamps, the resulting temperature profiles, and the corresponding implications for process-relevant parameters such as reproducibility and homogeneity. The second part briefly considers the various applications of FLA, starting with the classical task of defect minimization and ultra-shallow junction formation in Si, followed by further applications in Si technology, namely in the fields of hyperdoping, crystallization of thin amorphous films, and photovoltaics. Subsequent chapters cover the topics of doping and crystallization in Ge and silicon carbide, doping of III-V semiconductors, diluted magnetic semiconductors, III-V nanocluster synthesis in Si, annealing of transparent conductive oxides and high-k materials, nanoclusters in dielectric matrices, and the use of FLA for flexible substrates.

  5. Hydrogen in ferromagnetic semiconductors for planar spintronics

    NASA Astrophysics Data System (ADS)

    Farshchi, Rouin

    This dissertation documents the use of hydrogen for controlling electrical and magnetic properties of ferromagnetic semiconductors, particularly GaMnAs. With minimal structural perturbation, hydrogen forms complexes with Mn acceptors and renders them neutral, thereby substantially increasing electrical resistivity and removing ferromagnetism. A major finding presented herein is that laser annealing can be used to controllably dissociate the Mn-H complexes and restore ferromagnetism. Structural, electrical, and magnetic effects of the laser activation process are thoroughly explored through experiments and numerical modeling. Local laser activation with tightly-focused ultra-short laser pulses allows for high-resolution direct-writing of ferromagnetic patterns in semiconductors, introducing a new paradigm for device design. Prospects for laser formation of high-temperature phases in ferromagnetic semiconductors are investigated. Finally, several device concepts incorporating the laser activation process are discussed as building blocks towards planar all-semiconductor spintronics.

  6. Optical sensor of magnetic fields

    DOEpatents

    Butler, M.A.; Martin, S.J.

    1986-03-25

    An optical magnetic field strength sensor for measuring the field strength of a magnetic field comprising a dilute magnetic semi-conductor probe having first and second ends, longitudinally positioned in the magnetic field for providing Faraday polarization rotation of light passing therethrough relative to the strength of the magnetic field. Light provided by a remote light source is propagated through an optical fiber coupler and a single optical fiber strand between the probe and the light source for providing a light path therebetween. A polarizer and an apparatus for rotating the polarization of the light is provided in the light path and a reflector is carried by the second end of the probe for reflecting the light back through the probe and thence through the polarizer to the optical coupler. A photo detector apparatus is operably connected to the optical coupler for detecting and measuring the intensity of the reflected light and comparing same to the light source intensity whereby the magnetic field strength may be calculated.

  7. Intrinsic spin dynamics in semiconductor quantum dots

    NASA Astrophysics Data System (ADS)

    Valín-Rodríguez, Manuel

    2005-12-01

    We investigate the characteristic spin dynamics corresponding to semiconductor quantum dots within the multiband envelope function approximation (EFA). By numerically solving an 8 × 8 k·p Hamiltonian we treat systems based on different III-V semiconductor materials. It is shown that, even in the absence of an applied magnetic field, these systems show intrinsic spin dynamics governed by intraband and interband transitions leading to characteristic spin frequencies ranging from THz to optical frequencies.

  8. Etching Of Semiconductor Wafer Edges

    DOEpatents

    Kardauskas, Michael J.; Piwczyk, Bernhard P.

    2003-12-09

    A novel method of etching a plurality of semiconductor wafers is provided which comprises assembling said plurality of wafers in a stack, and subjecting said stack of wafers to dry etching using a relatively high density plasma which is produced at atmospheric pressure. The plasma is focused magnetically and said stack is rotated so as to expose successive edge portions of said wafers to said plasma.

  9. Lasing in subwavelength semiconductor nanopatches

    NASA Astrophysics Data System (ADS)

    Lakhani, Amit M.; Yu, Kyoungsik; Wu, Ming C.

    2011-01-01

    Subwavelength semiconductor nanopatch lasers were analyzed, fabricated and characterized. Lasing was achieved in cylindrical and rectangular metallodielectric nanopatch geometries. The two smallest moderate quality factor modes of cylindrical cavities, the 'electric-' and 'magnetic-' dipole-like modes, successfully lased with physical volumes as small as 0.75 (λ0/n)3. Polarization control in nanopatch geometries is successfully demonstrated in anisotropic rectangular nanopatch structures.

  10. Dilution refrigeration for space applications

    NASA Technical Reports Server (NTRS)

    Israelsson, U. E.; Petrac, D.

    1990-01-01

    Dilution refrigerators are presently used routinely in ground based applications where temperatures below 0.3 K are required. The operation of a conventional dilution refrigerator depends critically on the presence of gravity. To operate a dilution refrigerator in space many technical difficulties must be overcome. Some of the anticipated difficulties are identified in this paper and possible solutions are described. A single cycle refrigerator is described conceptually that uses forces other than gravity to function and the stringent constraints imposed on the design by requiring the refrigerator to function on the earth without using gravity are elaborated upon.

  11. Chain Dynamics in a Dilute Magnetorheological Fluid

    NASA Technical Reports Server (NTRS)

    Liu, Jing; Hagenbuchle, Martin

    1996-01-01

    The structure, formation, and dynamics of dilute, mono-dispersive ferrofluid emulsions in an external magnetic field have been investigated using dynamic light scattering techniques. In the absence of the magnetic field, the emulsion particles are randomly distributed and behave like hard spheres in Brownian motion. An applied magnetic field induces a magnetic dipole moment in each particle. Dipolar interactions between particles align them into chains where correlation functions show two decay processes. The short-time decay shows the motion of straight chains as a whole where the apparent chain length increases with the applied magnetic field and the particle volume fraction. Good scaling results are obtained showing that the apparent chain length grows with time following a power law with exponent of 0.6 and depends on the applied field, particle volume fraction, and diffusion constant of the particles. The long-time decay in the correlation function shows oscillation when the chains reach a certain length with time and stiffness with threshold field This result shows that chains not only fluctuate, but move in a periodic motion with a frequency of 364 Hz at lambda = 15. It may suggest the existence of phonons. This work is the first step in the understanding of the structure formation, especially chain coarsening mechanism, of magnetorheological (MR) fluids at higher volume fractions.

  12. Magnetic circular dichroism in the hard X-ray range

    NASA Astrophysics Data System (ADS)

    Rogalev, A.; Wilhelm, F.

    2015-12-01

    An overview of X-ray magnetic circular dichroism (XMCD) spectroscopy in the hard X-ray range is presented. A short historical overview shows how this technique has evolved from the early days of X-ray physics to become a workhorse technique in the modern magnetism research As with all X-ray spectroscopies, XMCD has the advantage of being element specific. Interpretation of the spectra based on magneto-optical sum rules can provide unique information about spin and orbital moment carried by absorbing atom in both amplitude and direction, can infer magnetic interactions from element selective magnetization curves, can allow separation of magnetic and non-magnetic components in heterogeneous systems. The review details the technology currently available for XMCD measurements in the hard X-ray range referring to the ESRF beamline ID12 as an example. The strengths of hard X-ray magnetic circular dichroism technique are illustrated with a wide variety of representative examples, such as actinide based ferromagnets, paramagnetism in metals, pure metallic nanoparticles, exchange spring magnets, half metallic ferromagnets, magnetism at interfaces, and dilute magnetic semiconductors. In this way, we aim to encourage researchers from various scientific communities to consider XMCD as a tool to understanding the electronic and magnetic properties of their samples.

  13. Ferromagnetism at room temperature with a large magnetic moment in anatase V-doped TiO2 thin films

    NASA Astrophysics Data System (ADS)

    Hong, Nguyen Hoa; Sakai, Joe; Hassini, Awatef

    2004-04-01

    V-doped TiO2 thin films were grown by laser ablation on LaAlO3 substrates. In the chosen range of the growth conditions, all V:TiO2 films have an anatase structure and exhibit semiconducting and ferromagnetic behaviors at room temperature. V:TiO2 films have a giant magnetic moment and they seem to be far better ferromagnetic than Co/Fe/Ni-doped TiO2 films. This study has proved that a few percent of V substituting for Ti in TiO2 can result in a potential diluted magnetic semiconductor.

  14. High temperature ferromagnetism with a giant magnetic moment in transparent co-doped SnO(2-delta).

    PubMed

    Ogale, S B; Choudhary, R J; Buban, J P; Lofland, S E; Shinde, S R; Kale, S N; Kulkarni, V N; Higgins, J; Lanci, C; Simpson, J R; Browning, N D; Das Sarma, S; Drew, H D; Greene, R L; Venkatesan, T

    2003-08-15

    The occurrence of room temperature ferromagnetism is demonstrated in pulsed laser deposited thin films of Sn(1-x)Co(x)O(2-delta) (x<0.3). Interestingly, films of Sn(0.95)Co(0.05)O(2-delta) grown on R-plane sapphire not only exhibit ferromagnetism with a Curie temperature close to 650 K, but also a giant magnetic moment of 7.5+/-0.5 micro(B)/Co, not yet reported in any diluted magnetic semiconductor system. The films are semiconducting and optically highly transparent.

  15. Unique Static Magnetic and Dynamic Electromagnetic Behaviors in Titanium Nitride/Carbon Composites Driven by Defect Engineering

    PubMed Central

    Gong, Chunhong; Meng, Hongjie; Zhao, Xiaowei; Zhang, Xuefeng; Yu, Laigui; Zhang, Jingwei; Zhang, Zhijun

    2016-01-01

    Recently, the defect-induced static magnetic behaviours of nanomaterials have been a cutting-edge issue in diluted magnetic semiconductor materials. However, the dynamic magnetic properties of nanomaterials are commonly ignored if their bulk counterparts are non-magnetic. In the present research, titanium nitride-carbon (TiN/C) nanocomposites were found to exhibit both static and dynamic magnetic properties that vary in the opposite trend. Moreover, novel unconventional electromagnetic resonance behaviour was demonstrated in TiN/C systems, and their permeability and permittivity show similar trend. This is challenging for the traditional understanding of electromagnetism and makes it possible to achieve an appropriate balance between the permeability and permittivity simultaneously in a simple system. Hopefully, the results could provide some valuable clues to revealing the magnetism and electromagnetism of nanostructures. PMID:26739853

  16. Magnetic polaron on dangling-bond spins in CdSe colloidal nanocrystals.

    PubMed

    Biadala, Louis; Shornikova, Elena V; Rodina, Anna V; Yakovlev, Dmitri R; Siebers, Benjamin; Aubert, Tangi; Nasilowski, Michel; Hens, Zeger; Dubertret, Benoit; Efros, Alexander L; Bayer, Manfred

    2017-03-13

    Non-magnetic colloidal nanostructures can demonstrate magnetic properties typical for diluted magnetic semiconductors because the spins of dangling bonds at their surface can act as the localized spins of magnetic ions. Here we report the observation of dangling-bond magnetic polarons (DBMPs) in 2.8-nm diameter CdSe colloidal nanocrystals (NCs). The DBMP binding energy of 7 meV is measured from the spectral shift of the emission lines under selective laser excitation. The polaron formation at low temperatures occurs by optical orientation of the dangling-bond spins (DBSs) that result from dangling-bond-assisted radiative recombination of spin-forbidden dark excitons. Modelling of the temperature dependence of the DBMP-binding energy and emission intensity shows that the DBMP is composed of a dark exciton and about 60 DBSs. The exchange integral of one DBS with the electron confined in the NC is ∼0.12 meV.

  17. Quantum oscillations in magnetically doped colloidal nanocrystals.

    PubMed

    Ochsenbein, Stefan T; Gamelin, Daniel R

    2011-02-01

    Progress in the synthesis of colloidal quantum dots has recently provided access to entirely new forms of diluted magnetic semiconductors, some of which may find use in quantum computation. The usefulness of a spin qubit is defined by its Rabi frequency, which determines the operation time, and its coherence time, which sets the error correction window. However, the spin dynamics of magnetic impurity ions in colloidal doped quantum dots remain entirely unexplored. Here, we use pulsed electron paramagnetic resonance spectroscopy to demonstrate long spin coherence times of ∼0.9 µs in colloidal ZnO quantum dots containing the paramagnetic dopant Mn(2+), as well as Rabi oscillations with frequencies ranging between 2 and 20 MHz depending on microwave power. We also observe electron spin echo envelope modulations of the Mn(2+) signal due to hyperfine coupling with protons outside the quantum dots, a situation unique to the colloidal form of quantum dots, and not observed to date.

  18. Boron doping a semiconductor particle

    DOEpatents

    Stevens, Gary Don; Reynolds, Jeffrey Scott; Brown, Louanne Kay

    1998-06-09

    A method (10,30) of boron doping a semiconductor particle using boric acid to obtain a p-type doped particle. Either silicon spheres or silicon powder is mixed with a diluted solution of boric acid having a predetermined concentration. The spheres are dried (16), with the boron film then being driven (18) into the sphere. A melt procedure mixes the driven boron uniformly throughout the sphere. In the case of silicon powder, the powder is metered out (38) into piles and melted/fused (40) with an optical furnace. Both processes obtain a p-type doped silicon sphere with desired resistivity. Boric acid is not a restricted chemical, is inexpensive, and does not pose any special shipping, handling, or disposal requirements.

  19. Boron doping a semiconductor particle

    DOEpatents

    Stevens, G.D.; Reynolds, J.S.; Brown, L.K.

    1998-06-09

    A method of boron doping a semiconductor particle using boric acid to obtain a p-type doped particle. Either silicon spheres or silicon powder is mixed with a diluted solution of boric acid having a predetermined concentration. The spheres are dried, with the boron film then being driven into the sphere. A melt procedure mixes the driven boron uniformly throughout the sphere. In the case of silicon powder, the powder is metered out into piles and melted/fused with an optical furnace. Both processes obtain a p-type doped silicon sphere with desired resistivity. Boric acid is not a restricted chemical, is inexpensive, and does not pose any special shipping, handling, or disposal requirements. 2 figs.

  20. Phosphorous doping a semiconductor particle

    DOEpatents

    Stevens, Gary Don; Reynolds, Jeffrey Scott

    1999-07-20

    A method (10) of phosphorus doping a semiconductor particle using ammonium phosphate. A p-doped silicon sphere is mixed with a diluted solution of ammonium phosphate having a predetermined concentration. These spheres are dried (16, 18), with the phosphorus then being diffused (20) into the sphere to create either a shallow or deep p-n junction. A good PSG glass layer is formed on the surface of the sphere during the diffusion process. A subsequent segregation anneal process is utilized to strip metal impurities from near the p-n junction into the glass layer. A subsequent HF strip procedure is then utilized to removed the PSG layer. Ammonium phosphate is not a restricted chemical, is inexpensive, and does not pose any special shipping, handling, or disposal requirement.

  1. Phosphorus doping a semiconductor particle

    DOEpatents

    Stevens, G.D.; Reynolds, J.S.

    1999-07-20

    A method of phosphorus doping a semiconductor particle using ammonium phosphate is disclosed. A p-doped silicon sphere is mixed with a diluted solution of ammonium phosphate having a predetermined concentration. These spheres are dried with the phosphorus then being diffused into the sphere to create either a shallow or deep p-n junction. A good PSG glass layer is formed on the surface of the sphere during the diffusion process. A subsequent segregation anneal process is utilized to strip metal impurities from near the p-n junction into the glass layer. A subsequent HF strip procedure is then utilized to removed the PSG layer. Ammonium phosphate is not a restricted chemical, is inexpensive, and does not pose any special shipping, handling, or disposal requirement. 1 fig.

  2. High field magnetotransport and point contact Andreev reflection measurements on CuCr{sub 2}Se{sub 4} and CuCr{sub 2}Se{sub 3}Br—Degenerate magnetic semiconductor single crystals

    SciTech Connect

    Borisov, K. Coey, J. M. D.; Stamenov, P.; Alaria, J.

    2014-05-07

    Single crystals of the metallically degenerate fully magnetic semiconductors CuCr{sub 2}Se{sub 4} and CuCr{sub 2}Se{sub 3}Br have been prepared by the Chemical Vapour Transport method, using either Se or Br as transport agents. The high-quality, millimetre-sized, octahedrally faceted, needle- and platelet-shaped crystals are characterised by means of high field magnetotransport (μ{sub 0}H≤ 14 T) and Point Contact Andreev Reflection. The relatively high spin polarisation observed |P|>0.56, together with the relatively low minority carrier effective mass of 0.25 m{sub e}, and long scattering time  10{sup −13} s, could poise these materials for integration in low- and close-to-room temperature minority injection bipolar heterojunction transistor demonstrations.

  3. Photoelectrosynthesis at semiconductor electrodes

    SciTech Connect

    Nozik, A. J.

    1980-12-01

    The general principles of photoelectrochemistry and photoelectrosynthesis are reviewed and some new developments in photoelectrosynthesis are discussed. Topics include energetics of semiconductor-electrolyte interfaces(band-edge unpinning); hot carrier injection at illuminated semiconductor-electrolyte junctions; derivatized semiconductor electrodes; particulate photoelectrochemical systems; layered compounds and other new materials; and dye sensitization. (WHK)

  4. Fabrication and optical studies of semiconductor quantum well structures

    NASA Astrophysics Data System (ADS)

    Chang, Huicheng

    In an effort to investigate modulation doping and 2-dimensional electron gas in wide gap semiconductors and diluted magnetic semiconductors, we carried out systematic studies of n-type modulation doped ZnSe/Zn0.86Cd0.14Se and ZnSe/Zn0.825Cd 0.14Mn0.035Se single quantum well structures. The roles of spacers between doped barriers and undoped wells, as well as doping levels with regard to screening of excitons, were investigated. Low temperature photoluminescence studies were performed under magnetic fields up to 30 tesla. In the presence of a magnetic field, distinct features evolved from the broad luminescence band. These are attributed to interband transitions between electrons occupying Landau levels to photoexcited holes. An analysis of the Landau-level occupation as a function of magnetic field yields the electron sheet density. Modulation doping was also studied in the context of lasing characteristics, such as doping the barriers in the active region of ZnSe/ZnCdSe quantum well laser structures. With the aid of n-type modulation doping, the optical gain (∝ (fc - fv)) enhanced by the modifications of the Fermi-Dirac distribution functions for electrons and holes in the conduction and valence bands. Resulting threshold conditions were obtained to be 1/2 ˜ 1/3 of those without modulation doping in the active regions. The biexcitonic stimulated emission, ˜10 meV below the main excitonic emission, was also observed in undoped samples, but not in the modulation doped structures due to the instability of excitons caused by the two dimensional electron gas in the well. We also studied the lasing modes in broad-area, equilateral triangular laser cavities, which take advantage of total internal reflection at the cleaved facets of the cavity for circulating modes. A new approach is proposed to study optical modes in equilateral triangular cavities in an analytical form. The modes were obtained by examining the simplest optical paths inside the cavity, which yields

  5. Electronic and magnetic properties of 1T-HfS2 by doping transition-metal atoms

    NASA Astrophysics Data System (ADS)

    Zhao, Xu; Wang, Tianxing; Wang, Guangtao; Dai, Xianqi; Xia, Congxin; Yang, Lin

    2016-10-01

    We explored the electronic and magnetic properties of 1T-HfS2 doped by transition metal (TM) atom using the first-principles calculation. We doped the transition metal atoms from the IIIB to VIB groups in nonmagnetic 1T-HfS2. Numerical results show that the pristine 1T-HfS2 is a semiconductor with indirect gaps of 1.250 eV. Magnetism can be observed for V, Cr, Mn, Fe, Co, and Cu doping. The polarized charges mainly arise from the localized 3d electrons of the TM atom. The strong p-d hybridization was found between the 3d orbitals of TM and 3p orbitals of S. The substituted 1T-HfS2 can be a metal, semiconductor or half-metal. Analysis of the band structure and magnetic properties indicates that TM-doped HfS2 (TM = V, Fe, Cu) are promising systems to explore two-dimensional diluted magnetic semiconductors. The formation energy calculations also indicate that it is energetically favorable and relatively easier to incorporate transition metal atom into the HfS2 under S-rich experimental conditions. In contrast, V-doped HfS2 has relatively wide half-metallic gap and low formation energy. So V-doped 1T-HfS2 is ideal for spin injection, which is important for application in semiconductor spintronics.

  6. Low-temperature effects of resonance electronic states at transition-element impurities in the kinetic, magnetic, and acoustic properties of semiconductors

    NASA Astrophysics Data System (ADS)

    Okulov, V. I.; Govorkova, T. E.; Gudkov, V. V.; Zhevstovskikh, I. V.; Korolyev, A. V.; Lonchakov, A. T.; Okulova, K. A.; Pamyatnykh, E. A.; Paranchich, S. Yu.

    2007-02-01

    New research results on phenomena due to the existence of electronic resonance energy levels and hybridized states at impurities of transition elements in semiconductors are presented. The data show that the thermal conductivity and ultrasonic parameters of mercury selenide containing iron impurities have resonance anomalies due to the influence of these impurities. A consistent and detailed interpretation is offered for the set of observed effects of hybridized states in mercury selenide with iron impurities. The proposed interpretation of the data obtained on other systems is discussed.

  7. Squeezing of phonoritons in semiconductors

    NASA Astrophysics Data System (ADS)

    Huong, N. Q.; Hau, N. N.; Birman, J. L.

    2007-12-01

    If a semiconductor sample is illuminated by hight-intensity electro-magnetic radiation near the resonance, the occupation number of polaritons in the same mode is large and the interaction between polaritons and phonons become very important. This interaction leads to the formation of a new kind of elementary excitation called phonoriton, which actually is a coherent superposition of excitons, photons, and longitudinal acoustic phonons under Brillouin scattering of an intense polariton. The phonoritons have been studied theoretically and experimentally and have been found in Cu2O. In this work we discuss the squeezing of phonoritons inside semiconductors from a theoretical point of view. We found the squeezed states, or so called 'low-noise' states- the states of reduced quantum noise with reducing effect of vacuum fluctuation, for phonoritons. It shows that the phonoritons are intrinsically squeezed. From our results we also have the possibility to tune the squeeze amplitude, what is important both theoretically and experimentally.

  8. Biomathematical modeling for diluted drugs.

    PubMed

    Chattopadhyay, S

    2003-07-01

    Several workers have proven that succussed ultra high dilution of a drug molecule in water or alcoholic medium, even exceeding Avogadro number, can bring forth noticeable physiological changes of an organism. Homeopathic drugs are prepared by dissolving such drug ingredients in distilled water and then the solution is centesimally diluted serially by ethanol. A mathematical model has been proposed by the present worker, which explains why the drug does not become non-molecular even in ultra-high dilution. This is due to loss of homogeneity in the solution, caused by increase of dielectric constant of the medium during the process of potentization. Facilitated binding of the drug molecules with minute physiologically important protein factors may be the cause of visible physiological alterations.

  9. Thermodynamics of a dilute XX chain in a field

    NASA Astrophysics Data System (ADS)

    Timonin, P. N.

    2016-06-01

    Gapless phases in ground states of low-dimensional quantum spin systems are rather ubiquitous. Their peculiarity is a remarkable sensitivity to external perturbations due to permanent criticality of such phases manifested by a slow (power-low) decay of pair correlations and the divergence of the corresponding susceptibility. A strong influence of various defects on the properties of the system in such a phase can then be expected. Here, we consider the influence of vacancies on the thermodynamics of the simplest quantum model with a gapless phase, the isotropic spin-1/2 XX chain. The existence of the exact solution of this model gives a unique opportunity to describe in detail the dramatic effect of dilution on the gapless phase—the appearance of an infinite series of quantum phase transitions resulting from level crossing under the variation of a longitudinal magnetic field. We calculate the jumps in the field dependences of the ground-state longitudinal magnetization, susceptibility, entropy, and specific heat appearing at these transitions and show that they result in a highly nonlinear temperature dependence of these parameters at low T. Also, the effect of enhancement of the magnetization and longitudinal correlations in the dilute chain is established. The changes of the pair spin correlators under dilution are also analyzed. The universality of the mechanism of the quantum transition generation suggests that similar effects of dilution can also be expected in gapless phases of other low-dimensional quantum spin systems.

  10. Unitary lens semiconductor device

    DOEpatents

    Lear, K.L.

    1997-05-27

    A unitary lens semiconductor device and method are disclosed. The unitary lens semiconductor device is provided with at least one semiconductor layer having a composition varying in the growth direction for unitarily forming one or more lenses in the semiconductor layer. Unitary lens semiconductor devices may be formed as light-processing devices such as microlenses, and as light-active devices such as light-emitting diodes, photodetectors, resonant-cavity light-emitting diodes, vertical-cavity surface-emitting lasers, and resonant cavity photodetectors. 9 figs.

  11. Unitary lens semiconductor device

    DOEpatents

    Lear, Kevin L.

    1997-01-01

    A unitary lens semiconductor device and method. The unitary lens semiconductor device is provided with at least one semiconductor layer having a composition varying in the growth direction for unitarily forming one or more lenses in the semiconductor layer. Unitary lens semiconductor devices may be formed as light-processing devices such as microlenses, and as light-active devices such as light-emitting diodes, photodetectors, resonant-cavity light-emitting diodes, vertical-cavity surface-emitting lasers, and resonant cavity photodetectors.

  12. Defect-induced magnetism in SiC probed by nuclear magnetic resonance

    NASA Astrophysics Data System (ADS)

    Zhang, Z. T.; Dmytriieva, D.; Molatta, S.; Wosnitza, J.; Wang, Yutian; Helm, M.; Zhou, Shengqiang; Kühne, H.

    2017-02-01

    We give evidence for intrinsic defect-induced bulk paramagnetism in SiC by means of 13C and 29Si nuclear magnetic resonance (NMR) spectroscopy. The temperature dependence of the internal dipole-field distribution, probed by the spin part of the NMR Knight shift and the spectral linewidth, follows the Curie law and scales very well with the macroscopic dc susceptibility. In order to quantitatively analyze the NMR spectra, a microscopic model based on dipole-dipole interactions was developed. The very good agreement between these simulations and the NMR data establishes a direct relation between the frequency distribution of the spectral intensity and the corresponding real-space volumes of nuclear spins. The presented approach by NMR can be applied to a variety of similar materials and, thus, opens a new avenue for the microscopic exploration and exploitation of diluted bulk magnetism in semiconductors.

  13. Dilution and the elusive baseline.

    PubMed

    Likens, Gene E; Buso, Donald C

    2012-04-17

    Knowledge of baseline conditions is critical for evaluating quantitatively the effect of human activities on environmental conditions, such as the impact of acid deposition. Efforts to restore ecosystems to prior, "pristine" condition require restoration targets, often based on some presumed or unknown baseline condition. Here, we show that rapid and relentless dilution of surface water chemistry is occurring in the White Mountains of New Hampshire, following decades of acid deposition. Extrapolating measured linear trends using a unique data set of up to 47 years, suggest that both precipitation and streamwater chemistry (r(2) >0.84 since 1985) in the Hubbard Brook Experimental Forest (HBEF) will approximate demineralized water within one to three decades. Because such dilute chemistry is unrealistic for surface waters, theoretical baseline compositions have been calculated for precipitation and streamwater: electrical conductivity of 3 and 5 μS/cm, base cation concentrations of 7 and 39 μeq/liter, acid-neutralizing capacity values of <1 and 14 μeq/liter, respectively; and pH 5.5 for both. Significantly large and rapid dilution of surface waters to values even more dilute than proposed for Pre-Industrial Revolution (PIR) conditions has important ecological, biogeochemical and water resource management implications, such as for the success of early reproductive stages of aquatic organisms.

  14. 40 CFR 1065.240 - Dilution air and diluted exhaust flow meters.

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ...) AIR POLLUTION CONTROLS ENGINE-TESTING PROCEDURES Measurement Instruments Flow-Related Measurements § 1065.240 Dilution air and diluted exhaust flow meters. (a) Application. Use a diluted exhaust flow... 40 Protection of Environment 33 2014-07-01 2014-07-01 false Dilution air and diluted exhaust...

  15. 40 CFR 1065.240 - Dilution air and diluted exhaust flow meters.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ...) AIR POLLUTION CONTROLS ENGINE-TESTING PROCEDURES Measurement Instruments Flow-Related Measurements § 1065.240 Dilution air and diluted exhaust flow meters. (a) Application. Use a diluted exhaust flow... 40 Protection of Environment 32 2010-07-01 2010-07-01 false Dilution air and diluted exhaust...

  16. 40 CFR 1065.240 - Dilution air and diluted exhaust flow meters.

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ...) AIR POLLUTION CONTROLS ENGINE-TESTING PROCEDURES Measurement Instruments Flow-Related Measurements § 1065.240 Dilution air and diluted exhaust flow meters. (a) Application. Use a diluted exhaust flow... 40 Protection of Environment 34 2012-07-01 2012-07-01 false Dilution air and diluted exhaust...

  17. 40 CFR 1065.240 - Dilution air and diluted exhaust flow meters.

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ...) AIR POLLUTION CONTROLS ENGINE-TESTING PROCEDURES Measurement Instruments Flow-Related Measurements § 1065.240 Dilution air and diluted exhaust flow meters. (a) Application. Use a diluted exhaust flow... 40 Protection of Environment 34 2013-07-01 2013-07-01 false Dilution air and diluted exhaust...

  18. 40 CFR 1065.240 - Dilution air and diluted exhaust flow meters.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ...) AIR POLLUTION CONTROLS ENGINE-TESTING PROCEDURES Measurement Instruments Flow-Related Measurements § 1065.240 Dilution air and diluted exhaust flow meters. (a) Application. Use a diluted exhaust flow... 40 Protection of Environment 33 2011-07-01 2011-07-01 false Dilution air and diluted exhaust...

  19. Voltage controlled magnetism in 3d transitional metals

    NASA Astrophysics Data System (ADS)

    Wang, Weigang

    2015-03-01

    Despite having attracted much attention in multiferroic materials and diluted magnetic semiconductors, the impact of an electric field on the magnetic properties remains largely unknown in 3d transitional ferromagnets (FMs) until recent years. A great deal of effort has been focused on the voltage-controlled magnetic anisotropy (VCMA) effect where the modulation of anisotropy field is understood by the change of electron density among different d orbitals of FMs in the presence of an electric field. Here we demonstrate another approach to alter the magnetism by electrically controlling the oxidation state of the 3d FM at the FM/oxide interface. The thin FM film sandwiched between a heavy metal layer and a gate oxide can be reversibly changed from an optimally-oxidized state with a strong perpendicular magnetic anisotropy to a metallic state with an in-plane magnetic anisotropy, or to a fully-oxidized state with nearly zero magnetization, depending on the polarity and time duration of the applied electric fields. This is a voltage controlled magnetism (VCM) effect, where both the saturation magnetization and anisotropy field of the 3d FM layer can be simultaneously controlled by voltage in a non-volatile fashion. We will also discuss the impact of this VCM effect on magnetic tunnel junctions and spin Hall switching experiments. This work, in collaboration with C. Bi, Y.H. Liu, T. Newhouse-Illige, M. Xu, M. Rosales, J.W. Freeland, O. Mryasov, S. Zhang, and S.G.E. te Velthuis, was supported in part by NSF (ECCS-1310338) and by C-SPIN, one of six centers of STARnet, a Semiconductor Research Corporation program, sponsored by MARCO and DARPA.

  20. CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES: Intraband dynamics and terahertz emission in biased semiconductor superlattices coupled to double far-infrared pulses

    NASA Astrophysics Data System (ADS)

    Li, Min; Mi, Xian-Wu

    2009-12-01

    This paper studies both the intraband polarization and terahertz emission of a semiconductor superlattice in combined dc and ac electric fields by using the superposition of two identical time delayed and phase shifted optical pulses. By adjusting the delay between these two optical pulses, our results show that the intraband polarization is sensitive to the time delay. The peak values appear again for the terahertz emission intensity due to the superposition of two optical pulses. The emission lines of terahertz blueshift and redshift in different ac electric fields and dynamic localization appears. The emission lines of THz only appear to blueshift when the biased superlattice is driven by a single optical pulse. Due to excitonic dynamic localization, the terahertz emission intensity decays with time in different dc and ac electric fields. These are features of this superlattice which distinguish it from a superlattice generated by a single optical pulse to drive it.

  1. Hot Electron Emission in Semiconductors.

    DTIC Science & Technology

    2014-09-26

    Second Interim Report Hot Electron Emission in Semiconductors Jan. 85 - June 85 6. PERFORMING ORG. REPORT NUMBER 7. AUTHOR(s) 6. CONTRACT OR GRANT NUMBER(a...KEY WORDS (Continue on reverse side Jf necessary and identify by block number) " -novel tunable FIR sources) • hot electron emission in GaAs/GaAlAs...heterostructures)" -,/ " streaming of hot carriers in crossed electric and magnetic fields ABST’AACr C-rrhmus- m .wr. efe it rewo-- .rv d identify by

  2. Electronic and magnetic properties of Co doped MoS2 monolayer

    PubMed Central

    Wang, Yiren; Li, Sean; Yi, Jiabao

    2016-01-01

    First principle calculations are employed to calculate the electronic and magnetic properties of Co doped MoS2 by considering a variety of defects including all the possible defect complexes. The results indicate that pristine MoS2 is nonmagnetic. The materials with the existence of S vacancy or Mo vacancy alone are non-magnetic either. Further calculation demonstrates that Co substitution at Mo site leads to spin polarized state. Two substitutional CoMo defects tend to cluster and result in the non-magnetic behaviour. However, the existence of Mo vacancies leads to uniform distribution of Co dopants and it is energy favourable with ferromagnetic coupling, resulting in an intrinsic diluted magnetic semiconductor. PMID:27052641

  3. Inhomogeneous magnetism in the doped kagome lattice of LaCuO2.66

    SciTech Connect

    Julien, M.-H.; Simonet, V; Canals, B.; Garlea, Vasile O; Bordet, Pierre; Darie, Celine

    2013-01-01

    The hole-doped kagome lattice of Cu2+ ions in LaCuO2.66 was investigated by nuclear quadrupole resonance (NQR), electron spin resonance (ESR), electrical resistivity, bulk magnetization and specific heat measurements. For temperatures above 180 K, the spin and charge properties show an activated behavior suggestive of a narrow-gap semiconductor. At lower temperatures, the results indicate an insulating ground state which may or may not be charge ordered. While the frustrated spins in remaining patches of the original kagome lattice might not be directly detected here, the observation of coexisting non-magnetic sites, free spins and frozen moments reveals an intrinsically inhomogeneous magnetism. Numerical simulations of a 1/3-diluted kagome lattice rationalize this magnetic state in terms of a heterogeneous distribution of cluster sizes and morphologies near the site-percolation threshold.

  4. A hybrid magnetic/complementary metal oxide semiconductor process design kit for the design of low-power non-volatile logic circuits

    NASA Astrophysics Data System (ADS)

    Di Pendina, G.; Prenat, G.; Dieny, B.; Torki, K.

    2012-04-01

    Since the advent of the MOS transistor, the performance of microelectronic circuits has followed Moore's law, stating that their speed and density would double every 18 months. Today, this trend tends to get out of breath: the continuously decreasing size of devices and increasing operation frequency result in power consumption and heating issues. Among the solutions investigated to circumvent these limitations, the use of non-volatile devices appears particularly promising. It allows easing, for example, the power gating technique, which consists in cutting-off the power supply of inactive blocks without losing information, drastically reducing the standby power consumption. In this approach, the advantages of magnetic tunnel junctions (MTJs) compared with other non-volatile devices allow one to design hybrid CMOS/magnetic circuits with high performance and new functionalities. Designing such circuits requires integrating MTJs in standard microelectronics design suites. This is performed by means of a process design kit (PDK) for the hybrid CMOS/magnetic technology. We present here a full magnetic PDK, which contains a compact model of the MTJ for electrical simulation, technology files for layout and physical verifications, and standard cells for the design of complex logic circuits and which is compatible with standard design suites. This PDK allows designers to accurately and comfortably design high-performance hybrid CMOS/magnetic logic circuits in the same way as standard CMOS circuits.

  5. Magnetic ordering of the antiferromagnet Cu2MnSnS4 from magnetization and neutron-scattering measurements

    NASA Astrophysics Data System (ADS)

    Fries, T.; Shapira, Y.; Palacio, Fernando; Morón, M. Carmen; McIntyre, Garry J.; Kershaw, R.; Wold, A.; McNiff, E. J., Jr.

    1997-09-01

    Magnetization and neutron-diffraction measurements were performed on a single crystal of Cu2MnSnS4. This quartenary magnetic semiconductor has the stannite structure (derived from the zinc-blende structure which is common to many II-VI dilute magnetic semiconductors), and it orders antiferromagnetically at low temperature. The neutron data for the nuclear structure confirm that the space group is I4¯2m. Both the neutron and magnetization data give TN=8.8 K for the Néel temperature. The neutron data show a collinear antiferromagnetic (AF) structure with a propagation vector k=[1/2,0,1/2], in agreement with earlier neutron data on a powder. However, the deduced angle θ between the spin axis and the crystallographic c direction is between 6° and 16°, in contrast to the earlier value of 40°. The magnetization curve at T<magnetic anisotropy gives an anisotropy field HA≅2 kOe. At high magnetic fields the magnetization curve at T<dilute magnetic semiconductors (DMS's). The much weaker antiferromagnetic interactions are expected from the difference in the crystal structures (stannite versus zinc-blende). A more surprising result is that the exchange constant which controls the AF order below TN is not between Mn ions with the smallest separation. This result contrasts with a prediction made for the related II-VI DMS, according to which the exchange constants decrease rapidly with distance.

  6. Coherent spectroscopy of semiconductors.

    PubMed

    Cundiff, Steven T

    2008-03-31

    The coherent optical response of semiconductors has been the subject of substantial research over the last couple of decades. The interest has been motivated by unique aspects of the interaction between light and semiconductors that are revealed by coherent techniques. The ability to probe the dynamics of charge carriers has been a significant driver. This paper presents a review of selected results in coherent optical spectroscopy of semiconductors.

  7. Semiconductor microcavity lasers

    SciTech Connect

    Gourley, P.L.; Wendt, J.R.; Vawter, G.A.; Warren, M.E.; Brennan, T.M.; Hammons, B.E.

    1994-02-01

    New kinds of semiconductor microcavity lasers are being created by modern semiconductor technologies like molecular beam epitaxy and electron beam lithography. These new microcavities exploit 3-dimensional architectures possible with epitaxial layering and surface patterning. The physical properties of these microcavities are intimately related to the geometry imposed on the semiconductor materials. Among these microcavities are surface-emitting structures which have many useful properties for commercial purposes. This paper reviews the basic physics of these microstructured lasers.

  8. Semiconductor bridge (SCB) detonator

    DOEpatents

    Bickes, Jr., Robert W.; Grubelich, Mark C.

    1999-01-01

    The present invention is a low-energy detonator for high-density secondary-explosive materials initiated by a semiconductor bridge igniter that comprises a pair of electrically conductive lands connected by a semiconductor bridge. The semiconductor bridge is in operational or direct contact with the explosive material, whereby current flowing through the semiconductor bridge causes initiation of the explosive material. Header wires connected to the electrically-conductive lands and electrical feed-throughs of the header posts of explosive devices, are substantially coaxial to the direction of current flow through the SCB, i.e., substantially coaxial to the SCB length.

  9. Semiconductor bridge (SCB) detonator

    DOEpatents

    Bickes, R.W. Jr.; Grubelich, M.C.

    1999-01-19

    The present invention is a low-energy detonator for high-density secondary-explosive materials initiated by a semiconductor bridge (SCB) igniter that comprises a pair of electrically conductive lands connected by a semiconductor bridge. The semiconductor bridge is in operational or direct contact with the explosive material, whereby current flowing through the semiconductor bridge causes initiation of the explosive material. Header wires connected to the electrically-conductive lands and electrical feed-throughs of the header posts of explosive devices, are substantially coaxial to the direction of current flow through the SCB, i.e., substantially coaxial to the SCB length. 3 figs.

  10. Interconnected semiconductor devices

    DOEpatents

    Grimmer, Derrick P.; Paulson, Kenneth R.; Gilbert, James R.

    1990-10-23

    Semiconductor layer and conductive layer formed on a flexible substrate, divided into individual devices and interconnected with one another in series by interconnection layers and penetrating terminals.

  11. Influence of temperature on spin polarization dynamics in dilute nitride semiconductors—Role of nonparamagnetic centers

    SciTech Connect

    Baranowski, M.; Misiewicz, J.

    2015-10-21

    We report theoretical studies of spin polarization dynamics in dilute nitride semiconductors. We develop a commonly used rate equation model [Lagarde et al., Phys. Status Solidi A 204, 208 (2007) and Kunold et al. Phys. Rev. B 83, 165202 (2011)] to take into account the influence of shallow localizing states on the temperature dependence of spin polarization dynamics and a spin filtering effect. Presented investigations show that the experimentally observed temperature dependence of a spin polarization lifetime in dilute nitrides can be related to the electron capture process by shallow localizing states without paramagnetic properties. This process reduces the efficiency of spin filtering effect by deep paramagnetic centers, especially at low temperatures.

  12. Signature effects of spin clustering and distribution of spin couplings on magnetization behaviour in Ni-Fe-Mo and Ni-Fe-W alloys.

    PubMed

    Banerjee, Mitali; Singh, Avinash; Majumdar, A K; Nigam, A K

    2011-08-03

    Spontaneous magnetization as a function of temperature is investigated for a number of disordered Ni-Fe-Mo and Ni-Fe-W alloys using superconducting quantum interference device magnetometry, with a focus on the low-T behaviour as well as the critical exponents associated with the magnetic phase transition. While the low-T magnetization is found to be well described by Bloch's T(3/2) law, extraordinary enhancements of the spin-wave parameter B and the reduced coefficient B(3/2) = BT(C)(3/2) are observed with increasing Fe dilution as compared to conventional 3d ferromagnets, whereas the critical amplitudes are found to decrease systematically. Recent locally self-consistent calculations of finite-temperature spin dynamics in a generic diluted magnet provide an understanding in terms of two distinct energy scales associated with weakly coupled bulk spins in the ferromagnetic matrix and strongly coupled cluster spins. In view of the similar behaviour observed in diluted magnetic semiconductors and other ferromagnetic alloys, it is proposed that these distinctive features corresponding to the three important temperature regimes provide macroscopic indicators of signature effects of spin clustering on the magnetization behaviour in disordered ferromagnets.

  13. Ferromagnetic resonance in a dilute suspension of uniaxial superparamagnetic particles

    NASA Astrophysics Data System (ADS)

    Poperechny, I. S.; Raikher, Yu. L.; Stepanov, V. I.

    2017-02-01

    A consistent theory of ferromagnetic resonance in a dilute suspension of superparamagnetic particles with uniaxial anisotropy of arbitrary strength is presented. The developed approach is used for studying the high-frequency response of a magnetic fluid at different temperatures. It is shown that in a certain temperature interval the absorption line splits into two components. The width of this interval is essentially dependent on the magnitude of the particle anisotropy.

  14. Science Notes: Dilution of a Weak Acid

    ERIC Educational Resources Information Center

    Talbot, Christopher; Wai, Chooi Khee

    2014-01-01

    This "Science note" arose out of practical work involving the dilution of ethanoic acid, the measurement of the pH of the diluted solutions and calculation of the acid dissociation constant, K[subscript a], for each diluted solution. The students expected the calculated values of K[subscript a] to be constant but they found that the…

  15. Molecular Semiconductors: An Introduction

    NASA Astrophysics Data System (ADS)

    de Mello, John; Halls, Jonathan James Michael

    2005-10-01

    Introducing the fundamental ideas and concepts behind organic semiconductors, this book provides a clear impression of the broad range of research activities currently underway. Aimed specifically at new entrant doctoral students from a wide variety of backgrounds, including chemistry, physics, electrical engineering and materials science, it also represents an ideal companion text to undergraduate courses in organic semiconductors.

  16. Reduction in the interface-states density of metal-oxide-semiconductor field-effect transistors fabricated on high-index Si (114) surfaces by using an external magnetic field

    SciTech Connect

    Molina, J. De La Hidalga, J.; Gutierrez, E.

    2014-08-14

    After fabrication of Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) devices on high-index silicon (114) surfaces, their threshold voltage (Vth) and interface-states density (Dit) characteristics were measured under the influence of an externally applied magnetic field of B = 6 μT at room temperature. The electron flow of the MOSFET's channel presents high anisotropy on Si (114), and this effect is enhanced by using an external magnetic field B, applied parallel to the Si (114) surface but perpendicular to the electron flow direction. This special configuration results in the channel electrons experiencing a Lorentzian force which pushes the electrons closer to the Si (114)-SiO{sub 2} interface and therefore to the special morphology of the Si (114) surface. Interestingly, Dit evaluation of n-type MOSFETs fabricated on Si (114) surfaces shows that the Si (114)-SiO{sub 2} interface is of high quality so that Dit as low as ∼10{sup 10 }cm{sup −2}·eV{sup −1} are obtained for MOSFETs with channels aligned at specific orientations. Additionally, using both a small positive Vds ≤ 100 mV and B = 6 μT, the former Dit is reduced by 35% in MOSFETs whose channels are aligned parallel to row-like nanostructures formed atop Si (114) surfaces (channels having a 90° rotation), whereas Dit is increased by 25% in MOSFETs whose channels are aligned perpendicular to these nanostructures (channels having a 0° rotation). From these results, the special morphology of a high-index Si (114) plane having nanochannels on its surface opens the possibility to reduce the electron-trapping characteristics of MOSFET devices having deep-submicron features and operating at very high frequencies.

  17. Resistance transition assisted geometry enhanced magnetoresistance in semiconductors

    SciTech Connect

    Luo, Zhaochu; Zhang, Xiaozhong

    2015-05-07

    Magnetoresistance (MR) reported in some non-magnetic semiconductors (particularly silicon) has triggered considerable interest owing to the large magnitude of the effect. Here, we showed that MR in lightly doped n-Si can be significantly enhanced by introducing two diodes and proper design of the carrier path [Wan, Nature 477, 304 (2011)]. We designed a geometrical enhanced magnetoresistance (GEMR) device whose room-temperature MR ratio reaching 30% at 0.065 T and 20 000% at 1.2 T, respectively, approaching the performance of commercial MR devices. The mechanism of this GEMR is: the diodes help to define a high resistive state (HRS) and a low resistive state (LRS) in device by their openness and closeness, respectively. The ratio of apparent resistance between HRS and LRS is determined by geometry of silicon wafer and electrodes. Magnetic field could induce a transition from LRS to HRS by reshaping potential and current distribution among silicon wafer, resulting in a giant enhancement of intrinsic MR. We expect that this GEMR could be also realized in other semiconductors. The combination of high sensitivity to low magnetic fields and large high-field response should make this device concept attractive to the magnetic field sensing industry. Moreover, because this MR device is based on a conventional silicon/semiconductor platform, it should be possible to integrate this MR device with existing silicon/semiconductor devices and so aid the development of silicon/semiconductor-based magnetoelectronics. Also combining MR devices and semiconducting devices in a single Si/semiconductor chip may lead to some novel devices with hybrid function, such as electric-magnetic-photonic properties. Our work demonstrates that the charge property of semiconductor can be used in the magnetic sensing industry, where the spin properties of magnetic materials play a role traditionally.

  18. Tuning magnetism by biaxial strain in native ZnO.

    PubMed

    Peng, Chengxiao; Wang, Yuanxu; Cheng, Zhenxiang; Zhang, Guangbiao; Wang, Chao; Yang, Gui

    2015-07-07

    Magnetic ZnO, one of the most important diluted magnetic semiconductors (DMS), has attracted great scientific interest because of its possible technological applications in optomagnetic devices. Magnetism in this material is usually delicately tuned by the doping level, dislocations, and local structures. The rational control of magnetism in ZnO is a highly attractive approach for practical applications. Here, the tuning effect of biaxial strain on the d(0) magnetism of native imperfect ZnO is demonstrated through first-principles calculations. Our calculation results show that strain conditions have little effect on the defect formation energy of Zn and O vacancies in ZnO, but they do affect the magnetism significantly. For a cation vacancy, increasing the compressive strain will obviously decrease its magnetic moment, while tensile strain cannot change the moment, which remains constant at 2 μB. For a singly charged anion vacancy, however, the dependence of the magnetic moment on strain is opposite to that of the Zn vacancy. Furthermore, the ferromagnetic state is always present, irrespective of the strain type, for ZnO with two zinc vacancies, 2VZns. A large tensile strain is favorable for improving the Curie temperature and realizing room temperature ferromagnetism for ZnO-based native semiconductors. For ZnO with two singly charged oxygen vacancies, 2Vs, no ferromagnetic ordering can be observed. Our work points the way to the rational design of materials beyond ZnO with novel non-intrinsic functionality by simply tuning the strain in a thin film form.

  19. Semiconductor sensor embedded microfluidic chip for protein biomarker detection using a bead-based immunoassay combined with deoxyribonucleic acid strand labeling.

    PubMed

    Lin, Yen-Heng; Peng, Po-Yu

    2015-04-15

    Two major issues need to be addressed in applying semiconductor biosensors to detecting proteins in immunoassays. First, the length of the antibody on the sensor surface surpasses the Debye lengths (approximately 1 nm, in normal ionic strength solution), preventing certain specifically bound proteins from being tightly attached to the sensor surface. Therefore, these proteins do not contribute to the sensor's surface potential change. Second, these proteins carry a small charge and can be easily affected by the pH of the surrounding solution. This study proposes a magnetic bead-based immunoassay using a secondary antibody to label negatively charged DNA fragments for signal amplification. An externally imposed magnetic force attaches the analyte tightly to the sensor surface, thereby effectively solving the problem of the analyte protein's distance to the sensor surface surpassing the Debye lengths. In addition, a normal ion intensity buffer can be used without dilution for the proposed method. Experiments revealed that the sensitivity can be improved by using a longer DNA fragment for labeling and smaller magnetic beads as solid support for the antibody. By using a 90 base pair DNA label, the signal was 15 times greater than that without labeling. In addition, by using a 120 nm magnetic bead, a minimum detection limit of 12.5 ng mL(-1) apolipoprotein A1 can be measured. Furthermore, this study integrates a semiconductor sensor with a microfluidic chip. With the help of microvalves and micromixers in the chip, the length of the mixing step for each immunoassay has been reduced from 1h to 20 min, and the sample volume has been reduced from 80 μL to 10 μL. In practice, a protein biomarker in a urinary bladder cancer patient's urine was successfully measured using this technique. This study provides a convenient and effective method to measure protein using a semiconductor sensor.

  20. Anomalous Magnetoresistance Phenomena in Organic Semiconductors

    NASA Astrophysics Data System (ADS)

    Bergeson, Jeremy D.; Lincoln, Derek M.; Shima Edelstein, Ruth; Prigodin, Vladimir N.; Epstein, Arthur J.

    2006-03-01

    We report magnetoresistance (MR) phenomena with temperature and bias dependence in organic semiconductor thin films with either nonmagnetic or magnetic contacts through high field reaching 9T. For nonmagnetic organic thin films such as Alq3 we find a low field MR up to 15%. A similar magnetic field effect has been reported earlier^1 but, as noted, the mechanism remains unclear. We propose a model of the anomalous MR where charge transport is space-charge limited. The current is determined by the e-h recombination rate. The recombination rate is field dependent, analogous to the chemical yield for radical pairs^2. Using an organic- based magnetic semiconductor^3, V[TCNE]x, and Co as magnetic contacts, with a nonmagnetic organic semiconductor (α-6T) leads to an order-of-magnitude broader zero-centered MR peak superimposed on a spin-valve effect. Possible origins of this broader MR will be discussed. 1. Francis, et al., New J. Phys. 6 185 (2004); Frankevich, et al., Phys. Rev. B 53 4498 (1996) 2. Steiner and Ulrich, Chem. Rev. 89 51 (1989) 3. Pokhodnya, et al., Adv. Mater. 12 410 (2000); Prigodin, et al., Adv. Mater. 14 1230 (2002); Shima Edelstein, et al., Mater. Res. Soc. Symp. Proc. 871E I7.3 (2005)

  1. A comprehensive study of the magnetic, structural, and transport properties of the III-V ferromagnetic semiconductor InMnP

    SciTech Connect

    Khalid, M.; Hübner, R.; Baehtz, C.; Skorupa, W.; Zhou, Shengqiang; Gao, Kun; Helm, M.; Weschke, E.; Gordan, O.; Salvan, G.; Zahn, D. R. T.

    2015-01-28

    The manganese induced magnetic, electrical, and structural modification in InMnP epilayers, prepared by Mn ion implantation and pulsed laser annealing, are investigated in the following work. All samples exhibit clear hysteresis loops and strong spin polarization at the Fermi level. The degree of magnetization, the Curie temperature, and the spin polarization depend on the Mn concentration. The bright-field transmission electron micrographs show that InP samples become almost amorphous after Mn implantation but recrystallize after pulsed laser annealing. We did not observe an insulator-metal transition in InMnP up to a Mn concentration of 5 at. %. Instead all InMnP samples show insulating characteristics up to the lowest measured temperature. Magnetoresistance results obtained at low temperatures support the hopping conduction mechanism in InMnP. We find that the Mn impurity band remains detached from the valence band in InMnP up to 5 at. % Mn doping. Our findings indicate that the local environment of Mn ions in InP is similar to GaMnAs, GaMnP, and InMnAs; however, the electrical properties of these Mn implanted III-V compounds are different. This is one of the consequences of the different Mn binding energy in these compounds.

  2. A Microgravity Helium Dilution Cooler

    NASA Technical Reports Server (NTRS)

    Roach, Pat R.; Sperans, Joel (Technical Monitor)

    1994-01-01

    We are developing a He-3-He-4 dilution cooler to operate in microgravity. It uses charcoal adsorption pumps and heaters for its operation; it has no moving parts. It currently operates cyclically to well below 0.1 K and we have designed a version to operate continuously. We expect that the continuous version will be able to provide the long-duration cooling that many experiments need at temperatures down to 0.040 K. More importantly, such a dilution cooler could provide the precooling that enables the use of adiabatic demagnetization techniques that can reach temperatures below 0.001 K. At temperatures below 0.002 K many fascinating microgravity experiments on superfluid He-3 become possible. Among the possibilities are: research into a superfluid He-3 gyroscope, study of the nucleation of the B-phase of superfluid He-3 when the sample is floating out of contact with walls, study of the anisotropy of the surface tension of the B-phase, and NMR experiments on tiny free-floating clusters of superfluid He-3 atoms that should model the shell structure of nuclei.

  3. Valence-state Model of Strain-dependent Mn L2,3 X-ray Magnetic Circular Dichroism from Ferromagnetic Semiconductors

    SciTech Connect

    van der Laan, G.; Edmonds, K. W.; Arenholz, E.; Farley, N. R. S.; Gallagher, B. L.

    2010-03-30

    We present a valence-state model to explain the characteristics of a recently observed pre-edge feature in Mn L{sub 3} x-ray magnetic circular dichroism (XMCD) of ferromagnetic (Ga,Mn)As and (Al,Ga,Mn)As thin films. The prepeak XMCD shows a uniaxial anisotropy, contrary to the cubic symmetry of the main structures induced by the crystalline electric field. Reversing the strain in the host lattice reverses the sign of the uniaxial anisotropy. With increasing carrier localization, the prepeak height increases, indicating an increasing 3d character of the hybridized holes. Hence, the feature is ascribed to transitions from the Mn 2p core level to unoccupied p-d hybridized valence states. The characteristics of the prepeak are readily reproduced by the model calculation taking into account the symmetry of the strain-, spin-orbit-, and exchange-split valence states around the zone center.

  4. Effect of Ga doping and point defect on magnetism of ZnO

    NASA Astrophysics Data System (ADS)

    Hou, Qingyu; Zhao, Chunwang; Jia, Xiaofang; Qu, Lingfeng

    2017-02-01

    The combined influence mechanism of Ga doping and Zn vacancy or O vacancy on magnetism of ZnO is studied using the first-principle calculation. The coexistence of Ga doping and Zn vacancy can achieve a Curie temperature higher than room temperature and the Ga doped ZnO system is a p-type diluted degenerate semiconductor with metalized ferromagnetism. The magnetism of the doping system of Ga doping and Zn vacancy is mainly contributed by double-exchange interaction through the holes of Zn vacancy taking carrier as medium. However, the system of Ga doping and O vacancy is non-magnetic. In the coexistence of Ga doping and Zn vacancy or O vacancy, a close relative distance between doping and vacancy will reduce the formation energy of the doping system but increase the easiness of doping and vacancy, as well as enhance the stability of the doping system.

  5. Structure Dependence of Magnetic Properties for Annealed GaMnN Films Grown by MOCVD

    NASA Astrophysics Data System (ADS)

    Jiang, Xian-Zhe; Yang, Xue-Lin; Ji, Cheng; Xing, Hai-Ying; Yang, Zhi-Jian; Wang, Cun-Da; Yu, Tong-Jun; Zhang, Guo-Yi

    2014-06-01

    GaMnN/GaN multilayers and conventional GaMnN single layers are grown by metal-organic chemical vapor deposition. Both kinds of samples show room-temperature ferromagnetism. After thermal annealing, the sample with GaMnN/GaN multilayer structure displays a larger coercivity and better thermal stability compared to the GaMnN single layer. The annealing effects on VGa related defects are observed from photoluminescence measurements. Moreover, a different magnetic behavior is also found in the annealed GaMnN films grown on different (n-type GaN and p-type GaN) templates. These kinds of structure-dependent magnetic behaviors indicate that defects or carriers transformation introduced during annealing may have important effects on the electronic structure of Mn ions and on the ferromagnetism. Our work may be helpful for further understanding the origin of ferromagnetism in GaN-based diluted magnetic semiconductors.

  6. Growth and Magnetic Properties of Mn-doped Germanium near the Kinetic Solubility Limit

    SciTech Connect

    Ozer, Mustafa M; Thompson, James R; Weitering, Harm H

    2012-01-01

    Growth of high-quality dilute magnetic semiconductor (DMS) material is often compromised by the low solubility of magnetic dopants, leading to formation of precipitates. Here, we explore the feasibility of growing precipitate-free Mn-doped Ge at doping levels near the kinetic solubility limit. Ge:Mn DMS films were grown at low temperature so as to minimize precipitate formation. Meanwhile, epitaxial quality was maintained by employing a very low growth rate. The magnetic properties of these lightly doped films exhibit both interesting contrasts and similarities with those of heavily-doped DMS reported in the literature, indicating that the substitutional Mn contents are very similar. Films grown at 95 degree C are free of intermetallic precipitates, offering useful opportunities for studying the fundamentals of carrier mediated exchange and metal insulator transitions without complications arising from precipitate formation.

  7. Quantum transport in carbon nanotube field effect transistors in high magnetic fields

    NASA Astrophysics Data System (ADS)

    Stephens, Jeffrey Dale

    The dissertation is a study of data taken from carbon nanotube field effect transistors (CNTFET). The data presented was taken at two locations, University of Pennsylvania in Philadelphia, PA and at Lehigh University in Bethlehem, PA. The samples are exposed to very low temperature using dilution refrigerator techniques and placed in high magnetic fields using a superconducting magnet. One of the main focuses will be on the effect an external magnetic field can produce on the transport properties of a CNTFET. Particular attention will be paid to the Kondo effect and Coulomb blockade phenomena. Comparisons are drawn between the observed behavior of the samples studied and with published works on carbon nanotube electronics and traditional semiconductor quantum dots.

  8. Structural, electronic and magnetic properties of 3d metal trioxide clusters-doped monolayer graphene: A first-principles study

    NASA Astrophysics Data System (ADS)

    Rafique, Muhammad; Shuai, Yong; Tan, He-Ping; Hassan, Muhammad

    2017-03-01

    We present first-principles density-functional calculations for the structural, electronic and magnetic properties of monolayer graphene doped with 3d (Ti, V, Cr, Fe, Co, Mn and Ni) metal trioxide TMO3 halogen clusters. In this paper we used two approaches for 3d metal trioxide clusters (i) TMO3 halogen cluster was embedded in monolayer graphene substituting four carbon (C) atoms (ii) three C atoms were substituted by three oxygen (O) atoms in one graphene ring and TM atom was adsorbed at the hollow site of O atoms substituted graphene ring. All the impurities were tightly bonded in the graphene ring. In first case of TMO3 doped graphene layer, the bond length between Csbnd O atom was reduced and bond length between TM-O atom was increased. In case of Cr, Fe, Co and Ni atoms substitution in between the O atoms, leads to Fermi level shifting to conduction band thereby causing the Dirac cone to move into valence band, however a band gap appears at high symmetric K-point. In case of TiO3 and VO3 substitution, system exhibits semiconductor properties. Interestingly, TiO3-substituted system shows dilute magnetic semiconductor behavior with 2.00 μB magnetic moment. On the other hand, the substitution of CoO3, CrO3, FeO3 and MnO3 induced 1.015 μB, 2.347 μB, 2.084 μB and 3.584 μB magnetic moment, respectively. In second case of O atoms doped in graphene and TM atoms adsorbed at the hollow site, the O atom bulges out of graphene plane and bond length between TM-O atom is increased. After TM atoms adsorption at the O substituted graphene ring the Fermi level (EF) shifts into conduction band. In case of Cr and Ni adsorption, system displays indirect band gap semiconductor properties with 0.0 μB magnetic moment. Co adsorption exhibits dilute magnetic semiconductor behavior producing 0.916 μB magnetic moment. Fe, Mn, Ti and V adsorption introduces band gap at high symmetric K-point also inducing 1.54 μB, 0.9909 μB, 1.912 μB, and 0.98 μB magnetic moments, respectively

  9. MAGNETS

    DOEpatents

    Hofacker, H.B.

    1958-09-23

    This patent relates to nmgnets used in a calutron and more particularly to means fur clamping an assembly of magnet coils and coil spacers into tightly assembled relation in a fluid-tight vessel. The magnet comprises windings made up of an assembly of alternate pan-cake type coils and spacers disposed in a fluid-tight vessel. At one end of the tank a plurality of clamping strips are held firmly against the assembly by adjustable bolts extending through the adjacent wall. The foregoing arrangement permits taking up any looseness which may develop in the assembly of coils and spacers.

  10. Semiconductor Solar Superabsorbers

    PubMed Central

    Yu, Yiling; Huang, Lujun; Cao, Linyou

    2014-01-01

    Understanding the maximal enhancement of solar absorption in semiconductor materials by light trapping promises the development of affordable solar cells. However, the conventional Lambertian limit is only valid for idealized material systems with weak absorption, and cannot hold for the typical semiconductor materials used in solar cells due to the substantial absorption of these materials. Herein we theoretically demonstrate the maximal solar absorption enhancement for semiconductor materials and elucidate the general design principle for light trapping structures to approach the theoretical maximum. By following the principles, we design a practical light trapping structure that can enable an ultrathin layer of semiconductor materials, for instance, 10 nm thick a-Si, absorb > 90% sunlight above the bandgap. The design has active materials with one order of magnitude less volume than any of the existing solar light trapping designs in literature. This work points towards the development of ultimate solar light trapping techniques. PMID:24531211

  11. Isotopically controlled semiconductors

    SciTech Connect

    Haller, E.E.

    2004-11-15

    A review of recent research involving isotopically controlled semiconductors is presented. Studies with isotopically enriched semiconductor structures experienced a dramatic expansion at the end of the Cold War when significant quantities of enriched isotopes of elements forming semiconductors became available for worldwide collaborations. Isotopes of an element differ in nuclear mass, may have different nuclear spins and undergo different nuclear reactions. Among the latter, the capture of thermal neutrons which can lead to neutron transmutation doping, can be considered the most important one for semiconductors. Experimental and theoretical research exploiting the differences in all the properties has been conducted and will be illustrated with selected examples. Manuel Cardona, the longtime editor-in-chief of Solid State Communications has been and continues to be one of the major contributors to this field of solid state physics and it is a great pleasure to dedicate this review to him.

  12. Desynchronization in diluted neural networks.

    PubMed

    Zillmer, Rüdiger; Livi, Roberto; Politi, Antonio; Torcini, Alessandro

    2006-09-01

    The dynamical behavior of a weakly diluted fully inhibitory network of pulse-coupled spiking neurons is investigated. Upon increasing the coupling strength, a transition from regular to stochasticlike regime is observed. In the weak-coupling phase, a periodic dynamics is rapidly approached, with all neurons firing with the same rate and mutually phase locked. The strong-coupling phase is characterized by an irregular pattern, even though the maximum Lyapunov exponent is negative. The paradox is solved by drawing an analogy with the phenomenon of "stable chaos," i.e., by observing that the stochasticlike behavior is "limited" to an exponentially long (with the system size) transient. Remarkably, the transient dynamics turns out to be stationary.

  13. Band anticrossing in dilute nitrides

    SciTech Connect

    Shan, W.; Yu, K.M.; Walukiewicz, W.; Wu, J.; Ager III, J.W.; Haller, E.E.

    2003-12-23

    Alloying III-V compounds with small amounts of nitrogen leads to dramatic reduction of the fundamental band-gap energy in the resulting dilute nitride alloys. The effect originates from an anti-crossing interaction between the extended conduction-band states and localized N states. The interaction splits the conduction band into two nonparabolic subbands. The downward shift of the lower conduction subband edge is responsible for the N-induced reduction of the fundamental band-gap energy. The changes in the conduction band structure result in significant increase in electron effective mass and decrease in the electron mobility, and lead to a large enhance of the maximum doping level in GaInNAs doped with group VI donors. In addition, a striking asymmetry in the electrical activation of group IV and group VI donors can be attributed to mutual passivation process through formation of the nearest neighbor group-IV donor nitrogen pairs.

  14. Semiconductor Nanocrystal Photonics

    DTIC Science & Technology

    2005-08-31

    D. Krauss, C. B. Poitras, and M. Lipson, " Energy transfer between colloidal semiconductor quantum dots in an optical microcavity," (submitted, 2006...Phys. Lett. 82, 4032 (2003). J. J. Peterson and T. D. Krauss, "Fluorescence Spectroscopy of Single Lead Sulfide Quantum Dots ," Nano Lett. (in press...Guo, Xiaowei Teng, Hong Yang, Todd D. Krauss, Carl B. Poitras, and Michal Lipson, "Enhanced Energy Transfer between Colloidal Semiconductor Quantum

  15. SILICON CARBIDE FOR SEMICONDUCTORS

    DTIC Science & Technology

    This state-of-the-art survey on silicon carbide for semiconductors includes a bibliography of the most important references published as of the end...of 1964. The various methods used for growing silicon carbide single crystals are reviewed, as well as their properties and devices fabricated from...them. The fact that the state of-the-art of silicon carbide semiconductors is not further advanced may be attributed to the difficulties of growing

  16. Critical dynamics of cluster algorithms in the dilute Ising model

    NASA Astrophysics Data System (ADS)

    Hennecke, M.; Heyken, U.

    1993-08-01

    Autocorrelation times for thermodynamic quantities at T C are calculated from Monte Carlo simulations of the site-diluted simple cubic Ising model, using the Swendsen-Wang and Wolff cluster algorithms. Our results show that for these algorithms the autocorrelation times decrease when reducing the concentration of magnetic sites from 100% down to 40%. This is of crucial importance when estimating static properties of the model, since the variances of these estimators increase with autocorrelation time. The dynamical critical exponents are calculated for both algorithms, observing pronounced finite-size effects in the energy autocorrelation data for the algorithm of Wolff. We conclude that, when applied to the dilute Ising model, cluster algorithms become even more effective than local algorithms, for which increasing autocorrelation times are expected.

  17. EDITORIAL: Oxide semiconductors

    NASA Astrophysics Data System (ADS)

    Kawasaki, M.; Makino, T.

    2005-04-01

    growth of p-type layers, ferromagnetic behaviour in transition-metal doped oxide is also fuelling renewed interest from the spintronic point of view. Since some of the related reports remain controversial, a critical discussion of the magnetic properties of these doped oxides is made by Fukumura et al. Before the observation of electro-luminescence from the ZnO p-n homojunction reported by Tsukazaki et al (2005 Nature Mater. 4 42), the afore-mentioned advantages have been explored and exploited by alternative methods, such as heteroepitaxy in which p-n heterostructures can be obtained by depositing n-type ZnO films on other p-type oxides while still utilizing ZnO as their active layer. Researchers in Hosono's group observed the high-intensity band-edge emission from such heterostructures for the first time (Ohta H et al 2000 Appl. Phys. Lett. 77 475). They have also successfully extended their research fields to the development of a transparent oxide transistor based on homologous compounds, which is reviewed by Kamiya and Hosono in this special issue. As can be seen from these demonstrations, the advantage of oxides is, of course, based on the fact that many elements in the periodic table can form compounds with oxygen. Since the discovery of high-temperature superconductors, these multi-component oxides have exploited the new field known as the science of strongly correlated-electron materials, whose recent progress is reviewed by Inoue. Although the collection of papers included in this special issue covers a good cross-section of the development of oxide semiconductors and correlated-electron oxides to date, this is not meant to be exhaustive. There are a number of unavoidable omissions, such as theoretical studies except for some theoretical predictions on the room-temperature Bose-Einstein condensation of exciton-polaritons found in the article by Chichibu et al. We hope this issue promotes further development of this exciting field. The guest editors would like to

  18. First principles DFT study of ferromagnetism in SnO{sub 2} induced by doped group 1A and 2A non-magnetic elements X (X=Li, Na, K, Be, Mg, Ca)

    SciTech Connect

    Chakraborty, Brahmananda Ramaniah, Lavanya M.

    2014-04-24

    Transition metal - free - ferromagnetism in diluted magnetic semiconductors (DMS) is of much current interest in the search for more efficient DMS materials for spintronic applications. Here, we report the results of our first principles density functional theory (DFT) study on impurity - induced ferromagnetism in non-magnetic SnO{sub 2} by a non-magnetic impurity. The impurities considered are sp-type of group 1A and 2A elements X (X = Li, Na, K, Be, Mg, Ca). Even a single atom of the group 1A elements makes the system magnetic, whereas for the group 2A elements Ca and Mg, a higher doping is required to induce ferromagnetism. For all the elements studied, the magnetic moment appears to increase with the doping concentration, at least at certain impurity separations, which is a positive indicator for practical applications.

  19. Raman spectra of Cu{sub 2}B{sup II}C{sup IV}X{sub 4}{sup VI} magnetic quaternary semiconductor compounds with tetragonal stannite type structure

    SciTech Connect

    Rincón, C. Quintero, M.; Power, Ch.; Moreno, E.; Quintero, E.; Morocoima, M.; Henao, J. A.; Macías, M. A.

    2015-05-28

    A comparative study of the Raman spectra of Cu{sub 2}B{sup II}C{sup IV}S{sub 4}{sup VI} and Cu{sub 2}B{sup II}C{sup IV}Se{sub 4}{sup VI}(where B = Mn or Fe) magnetic quaternary semiconductor compounds with stannite-type structure (I4{sup ¯}2m) has been done. Most of the fourteen Raman lines expected for these materials were observed in the spectra. The two strongest lines observed have been assigned to the IR inactive A{sub 1}{sup 1} and A{sub 1}{sup 2} stannite modes that originated from the motion of the S or Se anion around the Cu and C{sup IV} cations remaining at rest. The shift in the frequency of these two lines of about 150 cm{sup −1} to lower energies observed in Cu{sub 2}B{sup II}C{sup IV}Se{sub 4}{sup VI} compounds as compared to those in Cu{sub 2}B{sup II}C{sup IV}S{sub 4}{sup VI} ones, can then be explained as due to the anion mass effect. Based on the fact that values of these frequencies depend mainly on anion mass and bond-stretching forces between nearest-neighbor atoms, the vibrational frequencies v{sup ¯}(A{sub 1}{sup 2}) and v{sup ¯}(A{sub 1}{sup 2}) of both modes for several Cu{sub 2}B{sup II}C{sup IV}X{sub 4}{sup VI} stannite compounds (where X = S, Se, or Te) very close to the experimental data reported for these materials were calculated from a simple model that relates these stretching forces to the anion-cation bond-distances.

  20. Method of doping a semiconductor

    DOEpatents

    Yang, Chiang Y.; Rapp, Robert A.

    1983-01-01

    A method for doping semiconductor material. An interface is established between a solid electrolyte and a semiconductor to be doped. The electrolyte is chosen to be an ionic conductor of the selected impurity and the semiconductor material and electrolyte are jointly chosen so that any compound formed from the impurity and the semiconductor will have a free energy no lower than the electrolyte. A potential is then established across the interface so as to allow the impurity ions to diffuse into the semiconductor. In one embodiment the semiconductor and electrolyte may be heated so as to increase the diffusion coefficient.

  1. Electrocoalescence based serial dilution of microfluidic droplets.

    PubMed

    Bhattacharjee, Biddut; Vanapalli, Siva A

    2014-07-01

    Dilution of microfluidic droplets where the concentration of a reagent is incrementally varied is a key operation in drop-based biological analysis. Here, we present an electrocoalescence based dilution scheme for droplets based on merging between moving and parked drops. We study the effects of fluidic and electrical parameters on the dilution process. Highly consistent coalescence and fine resolution in dilution factor are achieved with an AC signal as low as 10 V even though the electrodes are separated from the fluidic channel by insulator. We find that the amount of material exchange between the droplets per coalescence event is high for low capillary number. We also observe different types of coalescence depending on the flow and electrical parameters and discuss their influence on the rate of dilution. Overall, we find the key parameter governing the rate of dilution is the duration of coalescence between the moving and parked drop. The proposed design is simple incorporating the channel electrodes in the same layer as that of the fluidic channels. Our approach allows on-demand and controlled dilution of droplets and is simple enough to be useful for assays that require serial dilutions. The approach can also be useful for applications where there is a need to replace or wash fluid from stored drops.

  2. Electrocoalescence based serial dilution of microfluidic droplets

    PubMed Central

    Bhattacharjee, Biddut; Vanapalli, Siva A.

    2014-01-01

    Dilution of microfluidic droplets where the concentration of a reagent is incrementally varied is a key operation in drop-based biological analysis. Here, we present an electrocoalescence based dilution scheme for droplets based on merging between moving and parked drops. We study the effects of fluidic and electrical parameters on the dilution process. Highly consistent coalescence and fine resolution in dilution factor are achieved with an AC signal as low as 10 V even though the electrodes are separated from the fluidic channel by insulator. We find that the amount of material exchange between the droplets per coalescence event is high for low capillary number. We also observe different types of coalescence depending on the flow and electrical parameters and discuss their influence on the rate of dilution. Overall, we find the key parameter governing the rate of dilution is the duration of coalescence between the moving and parked drop. The proposed design is simple incorporating the channel electrodes in the same layer as that of the fluidic channels. Our approach allows on-demand and controlled dilution of droplets and is simple enough to be useful for assays that require serial dilutions. The approach can also be useful for applications where there is a need to replace or wash fluid from stored drops. PMID:25379096

  3. Composition-tunable alloyed semiconductor nanocrystals.

    PubMed

    Regulacio, Michelle D; Han, Ming-Yong

    2010-05-18

    related to these interesting nanoalloys. In particular, colloidal semiconductor nanoalloys that exhibit composition-dependent magnetic properties have yet to be reported. Further studies of the alloying mechanism are also needed to develop improved synthetic strategies for the preparation of these alloyed nanomaterials.

  4. Magnetic performance of orthorhombic Mn35Ge35Te30 nanocrystals

    NASA Astrophysics Data System (ADS)

    Mahdy, Iman A.

    2017-01-01

    Nanocrystalline antiferromagnetic Mn35Ge35Te30 diluted magnetic semiconductors powder syntheses by the conventional direct reaction of pure metals. Nanocrystalline nature of the prepared sample confirmed using various techniques, where x-Ray diffraction (XRD) and atomic force microscope (AFM) measurements shows ~96 nm particle size, while transmission electron microscope (TEM) shows 92 nm particle size. XRD analysis show orthorhombic symmetry with lattice parameters a=7.386611±(0.0066) Å, b=8.962502±(0.0090) Å and c=7.027349±(0.0040) Å. Electron Spin resonance (ESR) show a broad asymmetric line whereas the remnant Mn2+ six-hyperfine lines are broadened within |+1/2>→|-1/2> line according to high anisotropy; calculated Landé g-factor is 2.047. Vibrating sample magnetometer (VSM) analysis, field-moment characteristics revealed a hysteresis loop with small coercive field indicating that Mn35Ge35Te30 is a soft magnetic material. Moreover, hysteresis measurements at different temperatures show increasing magnetization with increasing temperature up to 150 K followed by decreased with increasing temperature up to 300 K. This behavior indicated to the antiferromagnetic nature of the prepared nanocrystalline materials. Magnetic moment - temperature measurements show Néel temperature TN=172.6 K. Magnetic force microscope revealed magnetic domains as a result of interaction between magnetic dipole moments of magnetic cantilever and pressed powder.

  5. Diluted manganese on the bond-centered site in germanium

    SciTech Connect

    Decoster, S.; Vantomme, A.; Cottenier, S.; Wahl, U.; Correia, J. G.; Pereira, L. M. C.; Lacasta, C.; Da Silva, M. R.

    2010-10-11

    The functional properties of Mn-doped Ge depend to large extent on the lattice location of the Mn impurities. Here, we present a lattice location study of implanted diluted Mn by means of electron emission channeling. Surprisingly, in addition to the expected substitutional lattice position, a large fraction of the Mn impurities occupies the bond-centered site. Corroborated by ab initio calculations, the bond-centered Mn is related to Mn-vacancy complexes. These unexpected results call for a reassessment of the theoretical studies on the electrical and magnetic behavior of Mn-doped Ge, hereby including the possible role of Mn-vacancy complexes.

  6. Spin-glass behaviors in carrier polarity controlled Fe3-xTixO4 semiconductor thin films

    NASA Astrophysics Data System (ADS)

    Yamahara, H.; Seki, M.; Adachi, M.; Takahashi, M.; Nasu, H.; Horiba, K.; Kumigashira, H.; Tabata, H.

    2015-08-01

    Carrier-type control of spin-glass (cluster spin-glass) is studied in order to engineer basic magnetic semiconductor elements using the memory functions of spin-glass. A key of carrier-polarity control in magnetite is the valence engineering between Fe(II) and Fe(III) that is achieved by Ti(IV) substitution. Single phases of (001)-oriented Fe3-xTixO4 thin films have been obtained on spinel MgAl2O4 substrates by pulsed laser deposition. Thermoelectric power measurements reveal that Ti-rich films (x = 0.8) show p-type conduction, while Ti-poor films (x = 0.6-0.75) show n-type conduction. The systematic Fe(III) reduction to Fe(II) followed by Ti(IV) substitution in the octahedral sublattice is confirmed by the X-ray absorption spectra. All of the Fe3-xTixO4 films (x = 0.6-0.8) exhibit ferrimagnetism above room temperature. Next, the spin-glass behaviors of Ti-rich Fe2.2Ti0.8O4 film are studied, since this magnetically diluted system is expected to exhibit the spin-glass behaviors. The DC magnetization and AC susceptibility measurements for the Ti-rich Fe2.2Ti0.8O4 film reveal the presence of the spin glass phase. Thermal- and magnetic-field-history memory effects are observed and are attributed to the long time-decay nature of remanent magnetization. The detailed analysis of the time-dependent thermoremanent magnetization reveals the presence of the cluster spin glass state.

  7. Semiconductor surface protection material

    NASA Technical Reports Server (NTRS)

    Packard, R. D. (Inventor)

    1973-01-01

    A method and a product for protecting semiconductor surfaces is disclosed. The protective coating material is prepared by heating a suitable protective resin with an organic solvent which is solid at room temperature and converting the resulting solution into sheets by a conventional casting operation. Pieces of such sheets of suitable shape and thickness are placed on the semiconductor areas to be coated and heat and vacuum are then applied to melt the sheet and to drive off the solvent and cure the resin. A uniform adherent coating, free of bubbles and other defects, is thus obtained exactly where it is desired.

  8. Quantum Transport in Semiconductors

    DTIC Science & Technology

    1991-10-01

    SRS i 91 4. TITLE AND SUBTITLE Quantum Transport in Semiconductors 5. FUNDING NUMBER söMtos-rizk-ooss 6. AUTHOR(S) D. K. Ferry ©fte ELECTE...OF ABSTRACT UL NSN 7540-01-280-5500 O 1 9 Standard Form 298 (Rev. 2-89) Presented by ANSI Std «9-18 298-102 Final Report Quantum Transport in... Quantum Transport in Semiconductor Devices This final report describes a program of research investigating quantum effects which become important in

  9. GUARD RING SEMICONDUCTOR JUNCTION

    DOEpatents

    Goulding, F.S.; Hansen, W.L.

    1963-12-01

    A semiconductor diode having a very low noise characteristic when used under reverse bias is described. Surface leakage currents, which in conventional diodes greatly contribute to noise, are prevented from mixing with the desired signal currents. A p-n junction is formed with a thin layer of heavily doped semiconductor material disposed on a lightly doped, physically thick base material. An annular groove cuts through the thin layer and into the base for a short distance, dividing the thin layer into a peripheral guard ring that encircles the central region. Noise signal currents are shunted through the guard ring, leaving the central region free from such currents. (AEC)

  10. New unorthodox semiconductor devices

    NASA Astrophysics Data System (ADS)

    Board, K.

    1985-12-01

    A range of new semiconductor devices, including a number of structures which rely entirely upon new phenomena, are discussed. Unipolar two-terminal devices, including impurity-controlled barriers and graded composition barriers, are considered, as are new transistor structures, including the hot-electron camel transistor, the planar-doped barrier transistor, the thermionic emission transistor, and the permeable base transistor. Regenerative switching devices are addressed, including the metal-tunnel insulator-semiconductor switch, the polysilicon switch, MIS, and MISIM switching structures, and the triangular-barrier switch. Heterostructure devices are covered, including the heterojunction bipolar transistor, the selectively doped heterojunction transistor, heterojunction lasers, and quantum-well structures.

  11. Underestimation of access flow by ultrasound dilution flow measurements

    NASA Astrophysics Data System (ADS)

    Bos, Clemens; Smits, Johannes H. M.; Zijlstra, Jan J.; Blankestijn, Peter J.; Bakker, Chris J. G.; Viergever, Max A.

    2002-02-01

    For hemodialysis access surveillance, flow measurements are increasingly considered important because they identify accesses at risk of thrombosis. Usually these flow measurements are performed with the ultrasound dilution technique. In a previous patient study it was observed that the resulting flow values were systematically low as compared to magnetic resonance flow measurements, but a satisfactory explanation was lacking. In the present study, we will demonstrate by hemodynamic calculations and in vitro experiments that this discrepancy can be explained by a temporary reduction of the access flow rate, caused by the reversed needle configuration during ultrasound dilution flow measurements. In this configuration, blood is injected retrogressively at one needle and flow between the needles is increased, causing an increased dissipation of energy. The proposed explanation is subsequently confirmed in a patient with a loop graft, by measuring the blood velocity by Doppler ultrasound as a function of reversed dialyzer flow rate. Apart from the ultrasound dilution technique, these findings are applicable to other recently proposed methods for measuring access flow that employ the reversed needle configuration.

  12. Superconductivity in the ferromagnetic semiconductor samarium nitride

    NASA Astrophysics Data System (ADS)

    Anton, E.-M.; Granville, S.; Engel, A.; Chong, S. V.; Governale, M.; Zülicke, U.; Moghaddam, A. G.; Trodahl, H. J.; Natali, F.; Vézian, S.; Ruck, B. J.

    2016-07-01

    Conventional wisdom expects that making semiconductors ferromagnetic requires doping with magnetic ions and that superconductivity cannot coexist with magnetism. However, recent concerted efforts exploring new classes of materials have established that intrinsic ferromagnetic semiconductors exist and that certain types of strongly correlated metals can be ferromagnetic and superconducting at the same time. Here we show that the trifecta of semiconducting behavior, ferromagnetism, and superconductivity can be achieved in a single material. Samarium nitride (SmN) is a well-characterized intrinsic ferromagnetic semiconductor, hosting strongly spin-ordered 4 f electrons below a Curie temperature of 27 K. We have now observed that it also hosts a superconducting phase below 4 K when doped to electron concentrations above 1021cm-3 . The large exchange splitting of the conduction band in SmN favors equal-spin triplet pairing with p -wave symmetry. Significantly, superconductivity is enhanced in superlattices of gadolinium nitride (GdN) and SmN. An analysis of the robustness of such a superconducting phase against disorder leads to the conclusion that the 4 f bands are crucial for superconductivity, making SmN a heavy-fermion-type superconductor.

  13. 32nd International Conference on the Physics of Semiconductors

    SciTech Connect

    Chelikowsky, James

    2016-10-17

    The International Conference on the Physics of Semiconductors (ICPS) continues a series of biennial conferences that began in the 1950's. ICPS is the premier meeting for reporting all aspects of semiconductor physics including electronic, structural, optical, magnetic and transport properties with an emphasis on new materials and their applications. The meeting will reflect the state of art in the semiconductor physics field and will serve as a forum where scholars, researchers, and specialists can interact to discuss future research directions and technological advancements. The conference typically draws 1,000 international physicists, scientists, and students. This is one of the largest science meetings on semiconductors and related materials to be held in the United States.

  14. Kansas Advanced Semiconductor Project

    SciTech Connect

    Baringer, P.; Bean, A.; Bolton, T.; Horton-Smith, G.; Maravin, Y.; Ratra, B.; Stanton, N.; von Toerne, E.; Wilson, G.

    2007-09-21

    KASP (Kansas Advanced Semiconductor Project) completed the new Layer 0 upgrade for D0, assumed key electronics projects for the US CMS project, finished important new physics measurements with the D0 experiment at Fermilab, made substantial contributions to detector studies for the proposed e+e- international linear collider (ILC), and advanced key initiatives in non-accelerator-based neutrino physics.

  15. Chemically Derivatized Semiconductor Photoelectrodes.

    ERIC Educational Resources Information Center

    Wrighton, Mark S.

    1983-01-01

    Deliberate modification of semiconductor photoelectrodes to improve durability and enhance rate of desirable interfacial redox processes is discussed for a variety of systems. Modification with molecular-based systems or with metals/metal oxides yields results indicating an important role for surface modification in devices for fundamental study…

  16. Physics of Organic Semiconductors

    NASA Astrophysics Data System (ADS)

    Brütting, Wolfgang

    2004-05-01

    Organic semiconductors are of steadily growing interest as active components in electronics and optoelectronics. Due to their flexibility, low cost and ease-of-production they represent a valid alternative to conventional inorganic semiconductor technology in a number of applications, such as flat panel displays and illumination, plastic integrated circuits or solar energy conversion. Although first commercial applications of this technology are being realized nowadays, there is still the need for a deeper scientific understanding in order to achieve optimum device performance.This special issue of physica status solidi (a) tries to give an overview of our present-day knowledge of the physics behind organic semiconductor devices. Contributions from 17 international research groups cover various aspects of this field ranging from the growth of organic layers and crystals, their electronic properties at interfaces, their photophysics and electrical transport properties to the application of these materials in different devices like organic field-effect transistors, photovoltaic cells and organic light-emitting diodes.Putting together such a special issue one soon realizes that it is simply impossible to fully cover the whole area of organic semiconductors. Nevertheless, we hope that the reader will find the collection of topics in this issue useful for getting an up-to-date review of a field which is still developing very dynamically.

  17. Magnetization and Raman scattering studies of (Co,Mn) codoped ZnO nanoparticles

    NASA Astrophysics Data System (ADS)

    Duan, L. B.; Rao, G. H.; Wang, Y. C.; Yu, J.; Wang, T.

    2008-07-01

    Single-phase (Co,Mn) codoped ZnO nanoparticles were synthesized by an autocombustion method. Hysteresis loop was observed at 300 K for the sample Zn0.98Co0.01Mn0.01O with a low coercivity (40±5 Oe). Temperature dependence of magnetization rules out the possibility of superparamagnetism or spin-glass behavior. Raman scattering studies manifested that there might exist a defect annihilation arising from the (Co,Mn) codoped into ZnO host lattice. As the ferromagnetism of diluted magnetic semiconductors is closely related to the dopant-defect hybridization, the ferromagnetic ordering was significantly enhanced in the sample Zn0.98Co0.01Mn0.01O by the (Co,Mn) codoping, in comparison to the Zn0.99Co0.01O and Zn0.99Mn0.01O fabricated by the same method.

  18. Misconceptions of Emergent Semiconductor Phenomena

    NASA Astrophysics Data System (ADS)

    Nelson, Katherine G.

    The semiconductor field of Photovoltaics (PV) has experienced tremendous growth, requiring curricula to consider ways to promote student success. One major barrier to success students may face when learning PV is the development of misconceptions. The purpose of this work was to determine the presence and prevalence of misconceptions students may have for three PV semiconductor phenomena; Diffusion, Drift and Excitation. These phenomena are emergent, a class of phenomena that have certain characteristics. In emergent phenomena, the individual entities in the phenomena interact and aggregate to form a self-organizing pattern that can be observed at a higher level. Learners develop a different type of misconception for these phenomena, an emergent misconception. Participants (N=41) completed a written protocol. The pilot study utilized half of these protocols (n = 20) to determine the presence of both general and emergent misconceptions for the three phenomena. Once the presence of both general and emergent misconceptions was confirmed, all protocols (N=41) were analyzed to determine the presence and prevalence of general and emergent misconceptions, and to note any relationships among these misconceptions (full study). Through written protocol analysis of participants' responses, numerous codes emerged from the data for both general and emergent misconceptions. General and emergent misconceptions were found in 80% and 55% of participants' responses, respectively. General misconceptions indicated limited understandings of chemical bonding, electricity and magnetism, energy, and the nature of science. Participants also described the phenomena using teleological, predictable, and causal traits, indicating participants had misconceptions regarding the emergent aspects of the phenomena. For both general and emergent misconceptions, relationships were observed between similar misconceptions within and across the three phenomena, and differences in misconceptions were

  19. High-throughput ab-initio dilute solute diffusion database

    NASA Astrophysics Data System (ADS)

    Wu, Henry; Mayeshiba, Tam; Morgan, Dane

    2016-07-01

    We demonstrate automated generation of diffusion databases from high-throughput density functional theory (DFT) calculations. A total of more than 230 dilute solute diffusion systems in Mg, Al, Cu, Ni, Pd, and Pt host lattices have been determined using multi-frequency diffusion models. We apply a correction method for solute diffusion in alloys using experimental and simulated values of host self-diffusivity. We find good agreement with experimental solute diffusion data, obtaining a weighted activation barrier RMS error of 0.176 eV when excluding magnetic solutes in non-magnetic alloys. The compiled database is the largest collection of consistently calculated ab-initio solute diffusion data in the world.

  20. Additional compound semiconductor nanowires for photonics

    NASA Astrophysics Data System (ADS)

    Ishikawa, F.

    2016-02-01

    GaAs related compound semiconductor heterostructures are one of the most developed materials for photonics. Those have realized various photonic devices with high efficiency, e. g., lasers, electro-optical modulators, and solar cells. To extend the functions of the materials system, diluted nitride and bismide has been paid attention over the past decade. They can largely decrease the band gap of the alloys, providing the greater tunability of band gap and strain status, eventually suppressing the non-radiative Auger recombinations. On the other hand, selective oxidation for AlGaAs is a vital technique for vertical surface emitting lasers. That enables precisely controlled oxides in the system, enabling the optical and electrical confinement, heat transfer, and mechanical robustness. We introduce the above functions into GaAs nanowires. GaAs/GaAsN core-shell nanowires showed clear redshift of the emitting wavelength toward infrared regime. Further, the introduction of N elongated the carrier lifetime at room temperature indicating the passivation of non-radiative surface recombinations. GaAs/GaAsBi nanowire shows the redshift with metamorphic surface morphology. Selective and whole oxidations of GaAs/AlGaAs core-shell nanowires produce semiconductor/oxide composite GaAs/AlGaOx and oxide GaOx/AlGaOx core-shell nanowires, respectively. Possibly sourced from nano-particle species, the oxide shell shows white luminescence. Those property should extend the functions of the nanowires for their application to photonics.