The Pierce-diode approximation to the single-emitter plasma diode

NASA Astrophysics Data System (ADS)

Ender, A. Ya.; Kuhn, S.; Kuznetsov, V. I.

2006-11-01

The possibility of modeling fast processes in the collisionless single-emitter plasma diode (Knudsen diode with surface ionization, KDSI) by means of the Pierce-diode is studied. The KDSI is of practical importance in that it is an almost exact model of thermionic energy converters (TICs) in the collisionless regime and can also be used to model low-density Q-machines. At high temperatures, the Knudsen TIC comes close to the efficiency of the Carnot cycle and hence is the most promising converter of thermal to electric energy. TICs can be applied as component parts in high-temperature electronics. It is shown that normalizations must be chosen appropriately in order to compare the plasma characteristics of the two models: the KDSI and the Pierce-diode. A linear eigenmode theory of the KDSI is developed. For both nonlinear time-independent states and linear eigenmodes without electron reflection, excellent agreement is found between the analytical potential distributions for the Pierce-diode and the corresponding numerical ones for the KDSI. For the states with electron reflection, the agreement is satisfactory in a qualitative sense. A full classification of states of both diodes for the regimes with and without electron reflection is presented. The effect of the thermal spread in electron velocities on the potential distributions and the (ɛ,η) diagrams is analyzed. Generally speaking, the methodology developed is usefully applicable to a variety of systems in which the electrons have beam-like distributions.

The Pierce-diode approximation to the single-emitter plasma diode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ender, A. Ya.; Kuhn, S.; Kuznetsov, V. I.

2006-11-15

The possibility of modeling fast processes in the collisionless single-emitter plasma diode (Knudsen diode with surface ionization, KDSI) by means of the Pierce-diode is studied. The KDSI is of practical importance in that it is an almost exact model of thermionic energy converters (TICs) in the collisionless regime and can also be used to model low-density Q-machines. At high temperatures, the Knudsen TIC comes close to the efficiency of the Carnot cycle and hence is the most promising converter of thermal to electric energy. TICs can be applied as component parts in high-temperature electronics. It is shown that normalizations mustmore » be chosen appropriately in order to compare the plasma characteristics of the two models: the KDSI and the Pierce-diode. A linear eigenmode theory of the KDSI is developed. For both nonlinear time-independent states and linear eigenmodes without electron reflection, excellent agreement is found between the analytical potential distributions for the Pierce-diode and the corresponding numerical ones for the KDSI. For the states with electron reflection, the agreement is satisfactory in a qualitative sense. A full classification of states of both diodes for the regimes with and without electron reflection is presented. The effect of the thermal spread in electron velocities on the potential distributions and the ({epsilon},{eta}) diagrams is analyzed. Generally speaking, the methodology developed is usefully applicable to a variety of systems in which the electrons have beam-like distributions.« less

Analysis of different forward current-voltage behaviours of Al implanted 4H-SiC vertical p-i-n diodes

NASA Astrophysics Data System (ADS)

Megherbi, M. L.; Pezzimenti, F.; Dehimi, L.; Rao, S.; Della Corte, F. G.

2015-07-01

In this work different experimental current-voltage behaviours of several Al implanted 4H-SiC p-i-n diodes are investigated by means of numerical simulations in a wide range of currents and temperatures. Some devices for which recombination and tunneling are the dominant current processes at all biases are classified as "leaky" diodes. The well behaved diodes, instead, show good rectifying characteristics with a current conduction due to tunneling below 1.7 V, recombination between 1.7 V and 2.5 V, and diffusion processes above 2.5 V. At higher current regimes, a series resistance in excess of 1 mΩ cm2 becomes the main current limiting factor. Depending on the relative weight between the contact resistances and the internal diode resistance, different temperature dependencies of the current are obtained. A good agreement between numerical and measured data is achieved employing temperature-dependent carrier lifetime and mobility as fitting parameters.

Numerical simulations of the charged-particle flow dynamics for sources with a curved emission surface

NASA Astrophysics Data System (ADS)

Altsybeyev, V. V.

2016-12-01

The implementation of numerical methods for studying the dynamics of particle flows produced by pulsed sources is discussed. A particle tracking method with so-called gun iteration for simulations of beam dynamics is used. For the space charge limited emission problem, we suggest a Gauss law emission model for precise current-density calculation in the case of a curvilinear emitter. The results of numerical simulations of particle-flow formation for cylindrical bipolar diode and for diode with elliptical emitter are presented.

Poster - 16: Time-resolved diode dosimetry for in vivo proton therapy range verification: calibration through numerical modeling

DOE Office of Scientific and Technical Information (OSTI.GOV)

Toltz, Allison; Hoesl, Michaela; Schuemann, Jan

Purpose: A method to refine the implementation of an in vivo, adaptive proton therapy range verification methodology was investigated. Simulation experiments and in-phantom measurements were compared to validate the calibration procedure of a time-resolved diode dosimetry technique. Methods: A silicon diode array system has been developed and experimentally tested in phantom for passively scattered proton beam range verification by correlating properties of the detector signal to the water equivalent path length (WEPL). The implementation of this system requires a set of calibration measurements to establish a beam-specific diode response to WEPL fit for the selected ‘scout’ beam in a solidmore » water phantom. This process is both tedious, as it necessitates a separate set of measurements for every ‘scout’ beam that may be appropriate to the clinical case, as well as inconvenient due to limited access to the clinical beamline. The diode response to WEPL relationship for a given ‘scout’ beam may be determined within a simulation environment, facilitating the applicability of this dosimetry technique. Measurements for three ‘scout’ beams were compared against simulated detector response with Monte Carlo methods using the Tool for Particle Simulation (TOPAS). Results: Detector response in water equivalent plastic was successfully validated against simulation for spread out Bragg peaks of range 10 cm, 15 cm, and 21 cm (168 MeV, 177 MeV, and 210 MeV) with adjusted R{sup 2} of 0.998. Conclusion: Feasibility has been shown for performing calibration of detector response for a given ‘scout’ beam through simulation for the time resolved diode dosimetry technique.« less

Numerical analysis of the reverse blocking enhancement in High-K passivation AlGaN/GaN Schottky barrier diodes with gated edge termination

NASA Astrophysics Data System (ADS)

Bai, Zhiyuan; Du, Jiangfeng; Xin, Qi; Li, Ruonan; Yu, Qi

2018-02-01

We conducted a numerical analysis on high-K dielectric passivated AlGaN/GaN Schottky barrier diodes (HPG-SBDs) with a gated edge termination (GET). The reverse blocking characteristics were significantly enhanced without the stimulation of any parasitic effect by varying the dielectric thickness dge under the GET, thickness TP, and dielectric constant εr of the high-K passivation layer. The leakage current was reduced by increasing εr and decreasing dge. The breakdown voltage of the device was enhanced by increasing εr and TP. The highest breakdown voltage of 970 V and the lowest leakage current of 0.5 nA/mm were achieved under the conditions of εr = 80, TP = 800 nm, and dge = 10 nm. C-V simulation revealed that the HPG-SBDs induced no parasitic capacitance by comparing the integrated charges of the devices with different high-K dielectrics and different dge.

Electrolyte diodes with weak acids and bases. I. Theory and an approximate analytical solution.

PubMed

Iván, Kristóf; Simon, Péter L; Wittmann, Mária; Noszticzius, Zoltán

2005-10-22

Until now acid-base diodes and transistors applied strong mineral acids and bases exclusively. In this work properties of electrolyte diodes with weak electrolytes are studied and compared with those of diodes with strong ones to show the advantages of weak acids and bases in these applications. The theoretical model is a one dimensional piece of gel containing fixed ionizable groups and connecting reservoirs of an acid and a base. The electric current flowing through the gel is measured as a function of the applied voltage. The steady-state current-voltage characteristic (CVC) of such a gel looks like that of a diode under these conditions. Results of our theoretical, numerical, and experimental investigations are reported in two parts. In this first, theoretical part governing equations necessary to calculate the steady-state CVC of a reverse-biased electrolyte diode are presented together with an approximate analytical solution of this reaction-diffusion-ionic migration problem. The applied approximations are quasielectroneutrality and quasiequilibrium. It is shown that the gel can be divided into an alkaline and an acidic zone separated by a middle weakly acidic region. As a further approximation it is assumed that the ionization of the fixed acidic groups is complete in the alkaline zone and that it is completely suppressed in the acidic one. The general solution given here describes the CVC and the potential and ionic concentration profiles of diodes applying either strong or weak electrolytes. It is proven that previous formulas valid for a strong acid-strong base diode can be regarded as a special case of the more general formulas presented here.

Operation of a high impedance applied-B extraction ion diode on the SABRE positive polarity linear induction accelerator

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hanson, D.L.; Cuneo, M.E.; McKay, P.F.

We present results from initial experiments with a high impedance applied-B extraction diode on the SABRE ten stage linear induction accelerator (6.7 MV, 300 kA). We have demonstrated efficient coupling of power from the accelerator through an extended MITL (Magnetically Insulated Transmission Line) into a high intensity ion beam. Both MITL electron flow in the diode region and ion diode behavior, including ion source turn-on, virtual cathode formation and evolution, enhancement delay, and ion coupling efficiency, are strongly influenced by the geometry of the diode insulating magnetic field. For our present diode electrode geometry, electrons from the diode feed stronglymore » influence the evolution of the virtual cathode. Both experimental data and particle-in-cell numerical simulations show that uniform insulation of these feed electrons is required for uniform ion emission and efficient diode operation.« less

Towards diode-pumped mid-infrared praseodymium-ytterbium-doped fluoride fiber lasers

NASA Astrophysics Data System (ADS)

Woodward, R. I.; Hudson, D. D.; Jackson, S. D.

2018-02-01

We explore the potential of a new mid-infrared laser transition in praseodymium-doped fluoride fiber for emission around 3.4 μm, which can be conveniently pumped by 0.975 μm diodes via ytterbium sensitizer co-doping. Optimal cavity designs are determined through spectroscopic measurements and numerical modeling, suggesting that practical diode-pumped watt-level mid-infrared fiber sources beyond 3 μm could be achieved.

Widely tunable (PbSn)Te lasers using etched cavities for mass production. [for infrared spectroscopic applications

NASA Technical Reports Server (NTRS)

Miller, M. D.

1980-01-01

Lead salt diode lasers are being used increasingly as tunable sources of monochromatic infrared radiation in a variety of spectroscopic systems. These devices are particularly useful, both in the laboratory and in the field, because of their high spectral brightness (compared to thermal sources) and wide spectral coverage (compared to line-tunable gas lasers). While the primary commercial application of these lasers has been for ultrahigh resolution laboratory spectroscopy, there are numerous systems applications, including laser absorbtion pollution monitors and laser heterodyne radiometers, for which diode lasers have great potential utility. Problem areas related to the wider use of these components are identified. Among these are total tuning range, mode control, and high fabrication cost. A fabrication technique which specifically addresses the problems of tuning range and cost, and which also has potential application for mode control, is reported.

Hole injection and electron overflow improvement in InGaN/GaN light-emitting diodes by a tapered AlGaN electron blocking layer.

PubMed

Lin, Bing-Chen; Chen, Kuo-Ju; Wang, Chao-Hsun; Chiu, Ching-Hsueh; Lan, Yu-Pin; Lin, Chien-Chung; Lee, Po-Tsung; Shih, Min-Hsiung; Kuo, Yen-Kuang; Kuo, Hao-Chung

2014-01-13

A tapered AlGaN electron blocking layer with step-graded aluminum composition is analyzed in nitride-based blue light-emitting diode (LED) numerically and experimentally. The energy band diagrams, electrostatic fields, carrier concentration, electron current density profiles, and hole transmitting probability are investigated. The simulation results demonstrated that such tapered structure can effectively enhance the hole injection efficiency as well as the electron confinement. Consequently, the LED with a tapered EBL grown by metal-organic chemical vapor deposition exhibits reduced efficiency droop behavior of 29% as compared with 44% for original LED, which reflects the improvement in hole injection and electron overflow in our design.

An analytical-numerical approach for parameter determination of a five-parameter single-diode model of photovoltaic cells and modules

NASA Astrophysics Data System (ADS)

Hejri, Mohammad; Mokhtari, Hossein; Azizian, Mohammad Reza; Söder, Lennart

2016-04-01

Parameter extraction of the five-parameter single-diode model of solar cells and modules from experimental data is a challenging problem. These parameters are evaluated from a set of nonlinear equations that cannot be solved analytically. On the other hand, a numerical solution of such equations needs a suitable initial guess to converge to a solution. This paper presents a new set of approximate analytical solutions for the parameters of a five-parameter single-diode model of photovoltaic (PV) cells and modules. The proposed solutions provide a good initial point which guarantees numerical analysis convergence. The proposed technique needs only a few data from the PV current-voltage characteristics, i.e. open circuit voltage Voc, short circuit current Isc and maximum power point current and voltage Im; Vm making it a fast and low cost parameter determination technique. The accuracy of the presented theoretical I-V curves is verified by experimental data.

Doping concentration effect on performance of single QW double-heterostructure InGaN/AlGaN light emitting diode

NASA Astrophysics Data System (ADS)

Halim, N. Syafira Abdul; Wahid, M. Halim A.; Hambali, N. Azura M. Ahmad; Rashid, Shanise; Shahimin, Mukhzeer M.

2017-11-01

Light emitting diode (LED) employed a numerous applications such as displaying information, communication, sensing, illumination and lighting. In this paper, InGaN/AlGaN based on one quantum well (1QW) light emitting diode (LED) is modeled and studied numerically by using COMSOL Multiphysics 5.1 version. We have selected In0.06Ga0.94N as the active layer with thickness 50nm sandwiched between 0.15μm thick layers of p and n-type Al0.15Ga0.85N of cladding layers. We investigated an effect of doping concentration on InGaN/AlGaN double heterostructure of light-emitting diode (LED). Thus, energy levels, carrier concentration, electron concentration and forward voltage (IV) are extracted from the simulation results. As the doping concentration is increasing, the performance of threshold voltage, Vth on one quantum well (1QW) is also increases from 2.8V to 3.1V.

Spin polarization of {sup 87}Rb atoms with ultranarrow linewidth diode laser: Numerical simulation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Z. G.; Interdisciplinary Center of Quantum Information, National University of Defense Technology, Changsha, 410073; College of Science, National University of Defense Technology, Changsha, 410073

2016-08-15

In order to polarize {sup 87}Rb vapor effectively with ultranarrow linewidth diode laser, we studied the polarization as a function of some parameters including buffer gas pressure and laser power. Moreover, we also discussed the methods which split or modulate the diode laser frequency so as to pump the two ground hyperfine levels efficiently. We obtained some useful results through numerical simulation. If the buffer gas pressure is so high that the hyperfine structure is unresolved, the polarization is insensitive to laser frequency at peak absorption point so frequency splitting and frequency modulation methods do not show improvement. At lowmore » pressure and laser power large enough, where the hyperfine structure is clearly resolved, frequency splitting and frequency modulation methods can increase polarization effectively. For laser diodes, frequency modulation is easily realized with current modulation, so this method is attractive since it does not add any other components in the pumping laser system.« less

Stability and Physical Accuracy Analysis of the Numerical Solutions to Wigner-Poisson Modeling of Resonant Tunneling Diodes

DTIC Science & Technology

2013-03-22

discrete Wigner function is periodic in momentum space. The periodicity follows from the Fourier transform of the density matrix. The inverse...resonant-tunneling diode . The Green function method has been one of alternatives. Another alternative was to utilize the Wigner function . The Wigner ... function approach to the simulation of a resonant-tunneling diode offers many advantages. In the limit of the classical physics the Wigner equation

High brightness laser-diode device emitting 160 watts from a 100 μm/NA 0.22 fiber.

PubMed

Yu, Junhong; Guo, Linui; Wu, Hualing; Wang, Zhao; Tan, Hao; Gao, Songxin; Wu, Deyong; Zhang, Kai

2015-11-10

A practical method of achieving a high-brightness and high-power fiber-coupled laser-diode device is demonstrated both by experiment and ZEMAX software simulation, which is obtained by a beam transformation system, free-space beam combining, and polarization beam combining based on a mini-bar laser-diode chip. Using this method, fiber-coupled laser-diode module output power from the multimode fiber with 100 μm core diameter and 0.22 numerical aperture (NA) could reach 174 W, with equalizing brightness of 14.2  MW/(cm2·sr). By this method, much wider applications of fiber-coupled laser-diodes are anticipated.

Ultra-high brightness wavelength-stabilized kW-class fiber coupled diode laser

NASA Astrophysics Data System (ADS)

Huang, Robin K.; Chann, Bien; Glenn, John D.

2011-03-01

TeraDiode has produced a fiber-coupled direct diode laser with a power level of 1,040 W from a 200 μm core diameter, 0.18 numerical aperture (NA) output fiber at a single center wavelength. This was achieved with a novel beam combining and shaping technique using COTS diode lasers. The fiber-coupled output corresponds to a Beam Parameter Product (BPP) of 18 mm-mrad and is the lowest BPP kW-class direct diode laser yet reported. The laser has been used to demonstrate laser cutting and welding of steel sheet metal up to 6.65 mm thick. Further advances of these ultra-bright lasers are also projected.

Non-reciprocal geometric wave diode by engineering asymmetric shapes of nonlinear materials.

PubMed

Li, Nianbei; Ren, Jie

2014-08-29

Unidirectional nonreciprocal transport is at the heart of many fundamental problems and applications in both science and technology. Here we study the novel design of wave diode devices by engineering asymmetric shapes of nonlinear materials to realize the function of non-reciprocal wave propagations. We first show analytical results revealing that both nonlinearity and asymmetry are necessary to induce such non-reciprocal (asymmetric) wave propagations. Detailed numerical simulations are further performed for a more realistic geometric wave diode model with typical asymmetric shape, where good non-reciprocal wave diode effect is demonstrated. Finally, we discuss the scalability of geometric wave diodes. The results open a flexible way for designing wave diodes efficiently simply through shape engineering of nonlinear materials, which may find broad implications in controlling energy, mass and information transports.

Extremely high-brightness kW-class fiber coupled diode lasers with wavelength stabilization

NASA Astrophysics Data System (ADS)

Huang, Robin K.; Chann, Bien; Glenn, John D.

2011-06-01

TeraDiode has produced ultra-high brightness fiber-coupled direct diode lasers. A fiber-coupled direct diode laser with a power level of 1,040 W from a 200 μm core diameter, 0.18 numerical aperture (NA) output fiber at a single center wavelength was demonstrated. This was achieved with a novel beam combining and shaping technique using COTS diode lasers. The fiber-coupled output corresponds to a Beam Parameter Product (BPP) of 18 mm-mrad and is the lowest BPP kW-class direct diode laser yet reported. The laser has been used to demonstrate laser cutting and welding of steel sheet metal up to 6.65 mm thick. Higher brightness fiber-coupled diode lasers, including a module with 418 W of power coupled to a 100 μm, 0.15 NA fiber, have also been demonstrated.

Numerical simulations of novel high-power high-brightness diode laser structures

NASA Astrophysics Data System (ADS)

Boucke, Konstantin; Rogg, Joseph; Kelemen, Marc T.; Poprawe, Reinhart; Weimann, Guenter

2001-07-01

One of the key topics in today's semiconductor laser development activities is to increase the brightness of high-power diode lasers. Although structures showing an increased brightness have been developed specific draw-backs of these structures lead to a still strong demand for investigation of alternative concepts. Especially for the investigation of basically novel structures easy-to-use and fast simulation tools are essential to avoid unnecessary, cost and time consuming experiments. A diode laser simulation tool based on finite difference representations of the Helmholtz equation in 'wide-angle' approximation and the carrier diffusion equation has been developed. An optimized numerical algorithm leads to short execution times of a few seconds per resonator round-trip on a standard PC. After each round-trip characteristics like optical output power, beam profile and beam parameters are calculated. A graphical user interface allows online monitoring of the simulation results. The simulation tool is used to investigate a novel high-power, high-brightness diode laser structure, the so-called 'Z-Structure'. In this structure an increased brightness is achieved by reducing the divergency angle of the beam by angular filtering: The round trip path of the beam is two times folded using internal total reflection at surfaces defined by a small index step in the semiconductor material, forming a stretched 'Z'. The sharp decrease of the reflectivity for angles of incidence above the angle of total reflection leads to a narrowing of the angular spectrum of the beam. The simulations of the 'Z-Structure' indicate an increase of the beam quality by a factor of five to ten compared to standard broad-area lasers.

In Situ Chemical Modification of Schottky Barrier in Solution-Processed Zinc Tin Oxide Diode.

PubMed

Son, Youngbae; Li, Jiabo; Peterson, Rebecca L

2016-09-14

Here we present a novel in situ chemical modification process to form vertical Schottky diodes using palladium (Pd) rectifying bottom contacts, amorphous zinc tin oxide (Zn-Sn-O) semiconductor made via acetate-based solution process, and molybdenum top ohmic contacts. Using X-ray photoelectron spectroscopy depth profiling, we show that oxygen plasma treatment of Pd creates a PdOx interface layer, which is then reduced back to metallic Pd by in situ reactions during Zn-Sn-O film annealing. The plasma treatment ensures an oxygen-rich environment in the semiconductor near the Schottky barrier, reducing the level of oxygen-deficiency-related defects and improving the rectifying contact. Using this process, we achieve diodes with high forward current density exceeding 10(3)A cm(-2) at 1 V, rectification ratios of >10(2), and ideality factors of around 1.9. The measured diode current-voltage characteristics are compared to numerical simulations of thermionic field emission with sub-bandgap states in the semiconductor, which we attribute to spatial variations in metal stoichiometry of amorphous Zn-Sn-O. To the best of our knowledge, this is the first demonstration of vertical Schottky diodes using solution-processed amorphous metal oxide semiconductor. Furthermore, the in situ chemical modification method developed here can be adapted to tune interface properties in many other oxide devices.

Numerical aperture limits on efficient ball lens coupling of laser diodes to single-mode fibers with defocus to balance spherical aberration

NASA Technical Reports Server (NTRS)

Wilson, R. Gale

1994-01-01

The potential capabilities and limitations of single ball lenses for coupling laser diode radiation to single-mode optical fibers have been analyzed; parameters important to optical communications were specifically considered. These parameters included coupling efficiency, effective numerical apertures, lens radius, lens refractive index, wavelength, magnification in imaging the laser diode on the fiber, and defocus to counterbalance spherical aberration of the lens. Limiting numerical apertures in object and image space were determined under the constraint that the lens perform to the Rayleigh criterion of 0.25-wavelength (Strehl ratio = 0.80). The spherical aberration-defocus balance to provide an optical path difference of 0.25 wavelength units was shown to define a constant coupling efficiency (i.e., 0.56). The relative numerical aperture capabilities of the ball lens were determined for a set of wavelengths and associated fiber-core diameters of particular interest for single-mode fiber-optic communication. The results support general continuing efforts in the optical fiber communications industry to improve coupling links within such systems with emphasis on manufacturing simplicity, system packaging flexibility, relaxation of assembly alignment tolerances, cost reduction of opto-electronic components and long term reliability and stability.

Numerical analysis of high-power broad-area laser diode with improved heat sinking structure using epitaxial liftoff technique

NASA Astrophysics Data System (ADS)

Kim, Younghyun; Sung, Yunsu; Yang, Jung-Tack; Choi, Woo-Young

2018-02-01

The characteristics of high-power broad-area laser diodes with the improved heat sinking structure are numerically analyzed by a technology computer-aided design based self-consistent electro-thermal-optical simulation. The high-power laser diodes consist of a separate confinement heterostructure of a compressively strained InGaAsP quantum well and GaInP optical cavity layers, and a 100-μm-wide rib and a 2000-μm long cavity. In order to overcome the performance deteriorations of high-power laser diodes caused by self-heating such as thermal rollover and thermal blooming, we propose the high-power broad-area laser diode with improved heat-sinking structure, which another effective heat-sinking path toward the substrate side is added by removing a bulk substrate. It is possible to obtain by removing a 400-μm-thick GaAs substrate with an AlAs sacrificial layer utilizing well-known epitaxial liftoff techniques. In this study, we present the performance improvement of the high-power laser diode with the heat-sinking structure by suppressing thermal effects. It is found that the lateral far-field angle as well as quantum well temperature is expected to be improved by the proposed heat-sinking structure which is required for high beam quality and optical output power, respectively.

Noise and loss in balanced and subharmonically pumped mixers. I - Theory. II - Application

NASA Technical Reports Server (NTRS)

Kerr, A. R.

1979-01-01

The theory of noise and frequency conversion for two-diode balanced and subharmonically pumped mixers is presented. The analysis is based on the equivalent circuit of the Schottky diode, having nonlinear capacitance, series resistance, and shot and thermal noise. Expressions for the conversion loss, noise temperature, and input and output impedances are determined in a form suitable for numerical analysis. In Part II, the application of the theory to practical mixers is demonstrated, and the properties of some two-diode mixers are examined. The subharmonically pumped mixer is found to be much more strongly affected by the loop inductance than the balanced mixer, and the ideal two-diode mixer using exponential diodes has a multiport noise-equivalent network (attenuator) similar to that of the ideal single-diode mixer. It is concluded that the theory can be extended to mixers with more than two diodes and will be useful for their design and analysis, provided a suitable nonlinear analysis is available to determine the diode waveforms.

Non-Reciprocal Geometric Wave Diode by Engineering Asymmetric Shapes of Nonlinear Materials

PubMed Central

Li, Nianbei; Ren, Jie

2014-01-01

Unidirectional nonreciprocal transport is at the heart of many fundamental problems and applications in both science and technology. Here we study the novel design of wave diode devices by engineering asymmetric shapes of nonlinear materials to realize the function of non-reciprocal wave propagations. We first show analytical results revealing that both nonlinearity and asymmetry are necessary to induce such non-reciprocal (asymmetric) wave propagations. Detailed numerical simulations are further performed for a more realistic geometric wave diode model with typical asymmetric shape, where good non-reciprocal wave diode effect is demonstrated. Finally, we discuss the scalability of geometric wave diodes. The results open a flexible way for designing wave diodes efficiently simply through shape engineering of nonlinear materials, which may find broad implications in controlling energy, mass and information transports. PMID:25169668

Thermal sensing of cryogenic wind tunnel model surfaces Evaluation of silicon diodes

NASA Technical Reports Server (NTRS)

Daryabeigi, K.; Ash, R. L.; Dillon-Townes, L. A.

1986-01-01

Different sensors and installation techniques for surface temperature measurement of cryogenic wind tunnel models were investigated. Silicon diodes were selected for further consideration because of their good inherent accuracy. Their average absolute temperature deviation in comparison tests with standard platinum resistance thermometers was found to be 0.2 K in the range from 125 to 273 K. Subsurface temperature measurement was selected as the installation technique in order to minimize aerodynamic interference. Temperature distortion caused by an embedded silicon diode was studied numerically.

Thermal sensing of cryogenic wind tunnel model surfaces - Evaluation of silicon diodes

NASA Technical Reports Server (NTRS)

Daryabeigi, Kamran; Ash, Robert L.; Dillon-Townes, Lawrence A.

1986-01-01

Different sensors and installation techniques for surface temperature measurement of cryogenic wind tunnel models were investigated. Silicon diodes were selected for further consideration because of their good inherent accuracy. Their average absolute temperature deviation in comparison tests with standard platinum resistance thermometers was found to be 0.2 K in the range from 125 to 273 K. Subsurface temperature measurement was selected as the installation technique in order to minimize aerodynamic interference. Temperature distortion caused by an embedded silicon diode was studied numerically.

Study and optimization of negative polarity rod pinch diode as flash radiography source at 4.5 MV

DOE Office of Scientific and Technical Information (OSTI.GOV)

Etchessahar, Bertrand; Bicrel, Beatrice; Cassany, Bruno

2012-09-15

The negative polarity rod pinch diode (NPRPD) is a potential millimeter spot size radiography source for high voltage generators (4 to 8 MV) [Cooperstein et al., 'Considerations of rod-pinch diode operation in negative polarity for radiography,' in Proceedings of the 14th IEEE Pulsed Power Conference, 2003, pp. 975-978]. The NPRPD consists of a small diameter (few mm) cylindrical anode extending from the front end of the vacuum cell through a thin annular cathode, held by a central conductor. The polarity has been inverted when compared to the original rod pinch diode [Cooperstein et al., 'Theoretical modeling and experimental characterization ofmore » a rod-pinch diode,' Phys. Plasmas 8(10), 4618-4636 (2001)] in order to take advantage from the maximal x-ray emission toward the anode holder at such a voltage [Swanekamp et al., 'Evaluation of self-magnetically pinched diodes up to 10 MV as high resolution flash X-ray sources,' IEEE Trans. Plasma Sci. 32(5), 2004-2016 (2004). We have studied this diode at 4.5 MV, driven by the ASTERIX generator [Raboisson et al., 'ASTERIX, a high intensity X-ray generator,' in Proceedings of the 7th IEEE Pulsed Power Conference, 1989, pp. 567-570.]. This generator, made up of a capacitor bank and a Blumlein line, was initially designed to test the behavior of electronic devices under irradiation. In our experiments, the vacuum diode has been modified in order to set up flash a radiographic diode [Etchessahar et al., 'Negative polarity rod pinch diode experiments on the ASTERIX generator,' in Conference Records-Abstracts, 37th IEEE International Conference on Plasma Science, 2010]. The experiments and numerical simulations presented here allowed the observation and analysis of various physical phenomena associated with the diode operation. Also, the influence of several experimental parameters, such as cathode and anode diameters, materials and surface states, was examined. In order to achieve the most comprehensive characterization of the diode, both optical and x-ray diagnostics were used, including high speed multi-image ICCD (intensified CCD) cameras, streak camera, dosimeters, spot size measurements, and pinhole cameras. A set of new results have been obtained through this study. The plasma emission from the anode and cathode surfaces and its expansion appear to be critical for the diode functioning. Also, for the first time, potential sources of diode instability were identified. Finally, an optimal and stable diode configuration was found with the following parameters: 52 rad at 1 m (in Al) and 2.2 mm spot size.« less

885-nm Pumped Ceramic Nd:YAG Master Oscillator Power Amplifier Laser System

NASA Technical Reports Server (NTRS)

Yu, Anthony

2012-01-01

The performance of a traditional diode pumped solid-state laser that is typically pumped with 808-nm laser diode array (LDA) and crystalline Nd:YAG was improved by using 885-nm LDAs and ceramic Nd:YAG. The advantage is lower quantum defect, which will improve the thermal loading on laser gain medium, resulting in a higher-performance laser. The use of ceramic Nd:YAG allows a higher Nd dopant level that will make up the lower absorption at the 885-nm wavelength on Nd:YAG. When compared to traditional 808-nm pump, 885-nm diodes will have 30% less thermal load (or wasted heat) and will thus see a similar percentage improvement in the overall laser efficiency. In order to provide a more efficient laser system for future flight missions that require the use of low-repetition- rate (1% Nd. To make certain that the absorption at 885 nm is on the same par as the 808-nm diode, the Nd:YAG material needs to be doped with higher concentration of Nd. Ceramic Nd:YAG is the only material that can be tailored to specific needs.

Far field beam pattern of one MW combined beam of laser diode array amplifiers for space power transmission

NASA Technical Reports Server (NTRS)

Kwon, Jin H.; Lee, Ja H.

1989-01-01

The far-field beam pattern and the power-collection efficiency are calculated for a multistage laser-diode-array amplifier consisting of about 200,000 5-W laser diode arrays with random distributions of phase and orientation errors and random diode failures. From the numerical calculation it is found that the far-field beam pattern is little affected by random failures of up to 20 percent of the laser diodes with reference of 80 percent receiving efficiency in the center spot. The random differences in phases among laser diodes due to probable manufacturing errors is allowed to about 0.2 times the wavelength. The maximum allowable orientation error is about 20 percent of the diffraction angle of a single laser diode aperture (about 1 cm). The preliminary results indicate that the amplifier could be used for space beam-power transmission with an efficiency of about 80 percent for a moderate-size (3-m-diameter) receiver placed at a distance of less than 50,000 km.

Power generation in random diode arrays

NASA Astrophysics Data System (ADS)

Shvydka, Diana; Karpov, V. G.

2005-03-01

We discuss nonlinear disordered systems, random diode arrays (RDAs), which can represent such objects as large-area photovoltaics and ion channels of biological membranes. Our numerical modeling has revealed several interesting properties of RDAs. In particular, the geometrical distribution of nonuniformities across a RDA has only a minor effect on its integral characteristics determined by RDA parameter statistics. In the meantime, the dispersion of integral characteristics vs system size exhibits a nontrivial scaling dependence. Our theoretical interpretation here remains limited and is based on the picture of eddy currents flowing through weak diodes in the RDA.

Single-frequency Ince-Gaussian mode operations of laser-diode-pumped microchip solid-state lasers.

PubMed

Ohtomo, Takayuki; Kamikariya, Koji; Otsuka, Kenju; Chu, Shu-Chun

2007-08-20

Various single-frequency Ince-Gaussian mode oscillations have been achieved in laser-diode-pumped microchip solid-state lasers, including LiNdP(4)O(12) (LNP) and Nd:GdVO(4), by adjusting the azimuthal symmetry of the short laser resonator. Ince-Gaussian modes formed by astigmatic pumping have been reproduced by numerical simulation.

Diode Lasers used in Plastic Welding and Selective Laser Soldering - Applications and Products

NASA Astrophysics Data System (ADS)

Reinl, S.

Aside from conventional welding methods, laser welding of plastics has established itself as a proven bonding method. The component-conserving and clean process offers numerous advantages and enables welding of sensitive assemblies in automotive, electronic, medical, human care, food packaging and consumer electronics markets. Diode lasers are established since years within plastic welding applications. Also, soft soldering using laser radiation is becoming more and more significant in the field of direct diode laser applications. Fast power controllability combined with a contactless temperature measurement to minimize thermal damage make the diode laser an ideal tool for this application. These advantages come in to full effect when soldering of increasingly small parts in temperature sensitive environments is necessary.

Remotely powered distributed microfluidic pumps and mixers based on miniature diodes.

PubMed

Chang, Suk Tai; Beaumont, Erin; Petsev, Dimiter N; Velev, Orlin D

2008-01-01

We demonstrate new principles of microfluidic pumping and mixing by electronic components integrated into a microfluidic chip. The miniature diodes embedded into the microchannel walls rectify the voltage induced between their electrodes from an external alternating electric field. The resulting electroosmotic flows, developed in the vicinity of the diode surfaces, were utilized for pumping or mixing of the fluid in the microfluidic channel. The flow velocity of liquid pumped by the diodes facing in the same direction linearly increased with the magnitude of the applied voltage and the pumping direction could be controlled by the pH of the solutions. The transverse flow driven by the localized electroosmotic flux between diodes oriented oppositely on the microchannel was used in microfluidic mixers. The experimental results were interpreted by numerical simulations of the electrohydrodynamic flows. The techniques may be used in novel actively controlled microfluidic-electronic chips.

Quantum-dot light-emitting diodes utilizing CdSe /ZnS nanocrystals embedded in TiO2 thin film

NASA Astrophysics Data System (ADS)

Kang, Seung-Hee; Kumar, Ch. Kiran; Lee, Zonghoon; Kim, Kyung-Hyun; Huh, Chul; Kim, Eui-Tae

2008-11-01

Quantum-dot (QD) light-emitting diodes (LEDs) are demonstrated on Si wafers by embedding core-shell CdSe /ZnS nanocrystals in TiO2 thin films via plasma-enhanced metallorganic chemical vapor deposition. The n-TiO2/QDs /p-Si LED devices show typical p-n diode current-voltage and efficient electroluminescence characteristics, which are critically affected by the removal of QD surface ligands. The TiO2/QDs /Si system we presented can offer promising Si-based optoelectronic and electronic device applications utilizing numerous nanocrystals synthesized by colloidal solution chemistry.

INTERNATIONAL CONFERENCE ON SEMICONDUCTOR INJECTION LASERS SELCO-87: Pulsations of light emitted by laser diodes

NASA Astrophysics Data System (ADS)

Enders, P.

1988-11-01

A system of three simple rate equations, derived from equations describing the excess heating near the front face of a resonator, is used as a model of the appearance of spontaneous (self-sustained) pulsations of light emitted by injection lasers. The rate equations are considered as an almost conservative system and the limit cycle is calculated for the system. The good agreement with numerical results favors our approximation, compared with other approximate calculations.

Polarization spectroscopy of atomic erbium in a hollow cathode lamp

NASA Astrophysics Data System (ADS)

Ang'ong'a, Jackson; Gadway, Bryce

2018-02-01

In this work we perform polarization spectroscopy of erbium atoms in a hollow cathode lamp (HCL). We review the theory behind Doppler-free polarization spectroscopy, theoretically model the expected erbium polarization spectra, and compare the numerically calculated spectra to our experimental data. We further analyze the dependence of the measured spectra on the HCL current and the peak intensities of our pump and probe lasers to determine conditions. Applications include wavelength stabilization of diode laser radiation to the 400.91 nm erbium transition.

Small field detector correction factors kQclin,Qmsr (fclin,fmsr) for silicon-diode and diamond detectors with circular 6 MV fields derived using both empirical and numerical methods.

PubMed

O'Brien, D J; León-Vintró, L; McClean, B

2016-01-01

The use of radiotherapy fields smaller than 3 cm in diameter has resulted in the need for accurate detector correction factors for small field dosimetry. However, published factors do not always agree and errors introduced by biased reference detectors, inaccurate Monte Carlo models, or experimental errors can be difficult to distinguish. The aim of this study was to provide a robust set of detector-correction factors for a range of detectors using numerical, empirical, and semiempirical techniques under the same conditions and to examine the consistency of these factors between techniques. Empirical detector correction factors were derived based on small field output factor measurements for circular field sizes from 3.1 to 0.3 cm in diameter performed with a 6 MV beam. A PTW 60019 microDiamond detector was used as the reference dosimeter. Numerical detector correction factors for the same fields were derived based on calculations from a geant4 Monte Carlo model of the detectors and the Linac treatment head. Semiempirical detector correction factors were derived from the empirical output factors and the numerical dose-to-water calculations. The PTW 60019 microDiamond was found to over-respond at small field sizes resulting in a bias in the empirical detector correction factors. The over-response was similar in magnitude to that of the unshielded diode. Good agreement was generally found between semiempirical and numerical detector correction factors except for the PTW 60016 Diode P, where the numerical values showed a greater over-response than the semiempirical values by a factor of 3.7% for a 1.1 cm diameter field and higher for smaller fields. Detector correction factors based solely on empirical measurement or numerical calculation are subject to potential bias. A semiempirical approach, combining both empirical and numerical data, provided the most reliable results.

Suppression of electron overflow in 370-nm InGaN/AlGaN ultraviolet light emitting diodes with different insertion layer thicknesses

NASA Astrophysics Data System (ADS)

Wang, C. K.; Wang, Y. W.; Chiou, Y. Z.; Chang, S. H.; Jheng, J. S.; Chang, S. P.; Chang, S. J.

2017-06-01

In this study, the properties of 370-nm InGaN/AlGaN ultraviolet light emitting diodes (UV LEDs) with different thicknesses of un-doped Al0.3Ga0.7N insertion layer (IL) between the last quantum barrier and electron blocking layer (EBL) have been numerically simulated by Advance Physical Model of Semiconductor Devices (APSYS). The results show that the LEDs using the high Al composition IL can effectively improve the efficiency droop, light output power, and internal quantum efficiency (IQE) compared to the original structure. The improvements of the optical properties are mainly attributed to the energy band discontinuity and offset created by IL, which increase the potential barrier height of conduction band to suppress the electron overflow from the active region to the p-side layer.

Monolithic stacked blue light-emitting diodes with polarization-enhanced tunnel junctions.

PubMed

Kuo, Yen-Kuang; Shih, Ya-Hsuan; Chang, Jih-Yuan; Lai, Wei-Chih; Liu, Heng; Chen, Fang-Ming; Lee, Ming-Lun; Sheu, Jinn-Kong

2017-08-07

Monolithic stacked InGaN light-emitting diode (LED) connected by a polarization-enhanced GaN/AlN-based tunnel junction is demonstrated experimentally in this study. The typical stacked LEDs exhibit 80% enhancement in output power compared with conventional single LEDs because of the repeated use of electrons and holes for photon generation. The typical operation voltage of stacked LEDs is higher than twice the operation voltage of single LEDs. This high operation voltage can be attributed to the non-optimal tunneling junction in stacked LEDs. In addition to the analyses of experimental results, theoretical analysis of different schemes of tunnel junctions, including diagrams of energy bands, diagrams of electric fields, and current-voltage relation curves, are investigated using numerical simulation. The results shown in this paper demonstrate the feasibility in developing cost-effective and highly efficient tunnel-junction LEDs.

Application of Gaussian beam ray-equivalent model and back-propagation artificial neural network in laser diode fast axis collimator assembly.

PubMed

Yu, Hao; Rossi, Giammarco; Braglia, Andrea; Perrone, Guido

2016-08-10

The paper presents the development of a tool based on a back-propagation artificial neural network to assist in the accurate positioning of the lenses used to collimate the beam from semiconductor laser diodes along the so-called fast axis. After training using a Gaussian beam ray-equivalent model, the network is capable of indicating the tilt, decenter, and defocus of such lenses from the measured field distribution, so the operator can determine the errors with respect to the actual lens position and optimize the diode assembly procedure. An experimental validation using a typical configuration exploited in multi-emitter diode module assembly and fast axis collimating lenses with different focal lengths and numerical apertures is reported.

Research on atmospheric CO2 remote sensing with open-path tunable diode laser absorption spectroscopy and comparison methods

NASA Astrophysics Data System (ADS)

Xin, Fengxin; Guo, Jinjia; Sun, Jiayun; Li, Jie; Zhao, Chaofang; Liu, Zhishen

2017-06-01

An open-path atmospheric CO2 measurement system was built based on tunable diode laser absorption spectroscopy (TDLAS). The CO2 absorption line near 2 μm was selected, measuring the atmospheric CO2 with direct absorption spectroscopy and carrying on the comparative experiment with multipoint measuring instruments of the open-path. The detection limit of the TDLAS system is 1.94×10-6. The calibration experiment of three AZ-7752 handheld CO2 measuring instruments was carried out with the Los Gatos Research gas analyzer. The consistency of the results was good, and the handheld instrument could be used in the TDLAS system after numerical calibration. With the contrast of three AZ-7752 and their averages, the correlation coefficients are 0.8828, 0.9004, 0.9079, and 0.9393 respectively, which shows that the open-path TDLAS has the best correlation with the average of three AZ-7752 and measures the concentration of atmospheric CO2 accurately. Multipoint measurement provides a convenient comparative method for open-path TDLAS.

Dynamical regimes and intracavity propagation delay in external cavity semiconductor diode lasers

NASA Astrophysics Data System (ADS)

Jayaprasath, E.; Sivaprakasam, S.

2017-11-01

Intracavity propagation delay, a delay introduced by a semiconductor diode laser, is found to significantly influence synchronization of multiple semiconductor diode lasers, operated either in stable or in chaotic regime. Two diode lasers coupled in unidirectional scheme is considered in this numerical study. A diode laser subjected to an optical feedback, also called an external cavity diode laser, acts as the transmitter laser (TL). A solitary diode laser acts as the receiver laser (RL). The optical output of the TL is coupled to the RL and laser operating parameters are optimized to achieve synchronization in their output intensities. The time-of-flight between the TL and RL introduces an intercavity time delay in the dynamics of RL. In addition to this, an intracavity propagation delay arises as the TL's field propagated within the RL. This intracavity propagation delay is evaluated by cross-correlation analysis between the output intensities of the lasers. The intracavity propagation delay is found to increase as the external cavity feedback rate of TL is increased, while an increment in the injection rate between the two lasers resulted in a reduction of intracavity propagation delay.

Composite Material Aircraft Electromagnetic Properties and Design Guidelines

DTIC Science & Technology

1981-01-01

Diode Characteristics for IN914 Diode at 220 MHz 7-6 7.5 Characteristics of a 2N2369A Transitor With and Without RF Interference on the Collector Lead...Analylsi Miser Reiponse Model Adjacent Channel Interference Summary 7. STATISTICAL AND NUMERICAL I. PROPAGATION MODELS ANALYSIS MASTER PROPAGATION SYSTEM...Propagation System lIPS) Simsulationst Smorothe Curve Smooth Earth (SCSIS) Oemtralltzd File Statistics Analyzer (Q63) flislance Free Space Spherical Raflectiot

Route to broadband chaos in a chaotic laser diode subject to optical injection.

PubMed

Wang, An-Bang; Wang, Yun-Cai; Wang, Juan-Fen

2009-04-15

We experimentally and numerically demonstrate a route to bandwidth-enhanced chaos that is induced by an additional optical injection for a chaotic laser diode with optical feedback. The measured and calculated optical spectra consistently reveal that the mechanism of bandwidth enhancement is the interaction between the injection and chaotic laser field via beating. The bandwidth can be maximized only when the injected light is detuned into the edge of the optical spectrum of the chaotic laser field and the beating frequency exceeds the original bandwidth. The simulated dynamics maps indicate that 20 GHz broadband chaos can be obtained by commonly used laser diodes.

Prospective study of the 532 nm laser (KTP) versus diode laser 980 nm in the resection of hyperplastic lesions of the oral cavity

PubMed Central

Bargiela-Pérez, Patricia; González-Merchán, Jorge; Díaz-Sánchez, Rosa; Serrera-Figallo, Maria-Angeles; Volland, Gerd; Joergens, Martin; Gutiérrez-Pérez, Jose-Luis

2018-01-01

Background The aim of this study is to evaluate the resection of hyperplastic lesions on the buccal mucosa comparing the 532nm laser (KTP), versus diode 980nm laser, considering pain, scarring, inflammation and drug consumption that occurred postoperatively with each lasers. Material and Methods A prospective study of consecutive series of 20 patients in two groups that presents hyperplastic lesions on the buccal mucosa. The choice of the KTP laser or diode 980nm laser for the surgery was made randomly. The power used was 1.5W in both groups in a continuous wave mode with a 320 μm optical fiber. Parameters of pain, scarring, inflammation and consumption of drugs were recorded by a Numerical Rating Scale and evaluated postoperatively. These recordings were made the day of the surgery, 24 hours after, 14 and 28 days after. Results Pain and inflammation was light - moderate. The consumption of paracetamol was somewhat higher in the diode 980nm laser versus the KTP laser after 24 hours, although data was not statistically significant; significant differences were found after 28 days in regards to pain (p = 0.023) and inflammation (p = 0.023), but always in the absence parameter so we find no pain in both lasers. Scarring in the two types of laser showed no differences along the visits, with not detected scar retractable. Conclusions Although there is a slight histological difference regarding the KTP laser in the oral soft tissues for clinical use, both wavelengths are very suitable for excision of oral fibroma. Key words:Laser surgery, Laser therapy, oral surgery, soft tissue, 980 nm diode laser, 532 nm KTP laser. PMID:29274158

Simultaneous measurement of 2-dimensional H2O concentration and temperature distribution in premixed methane/air flame using TDLAS-based tomography technology

NASA Astrophysics Data System (ADS)

Wang, Fei; Wu, Qi; Huang, Qunxing; Zhang, Haidan; Yan, Jianhua; Cen, Kefa

2015-07-01

An innovative tomographic method using tunable diode laser absorption spectroscopy (TDLAS) and algebraic reconstruction technique (ART) is presented in this paper for detecting two-dimensional distribution of H2O concentration and temperature in a premixed flame. The collimated laser beam emitted from a low cost diode laser module was delicately split into 24 sub-beams passing through the flame from different angles and the acquired laser absorption signals were used to retrieve flame temperature and H2O concentration simultaneously. The efficiency of the proposed reconstruction system and the effect of measurement noise were numerically evaluated. The temperature and H2O concentration in flat methane/air premixed flames under three different equivalence ratios were experimentally measured and reconstruction results were compared with model calculations. Numerical assessments indicate that the TDLAS tomographic system is capable for temperature and H2O concentration profiles detecting even the noise strength reaches 3% of absorption signal. Experimental results under different combustion conditions are well demonstrated along the vertical direction and the distribution profiles are in good agreement with model calculation. The proposed method exhibits great potential for 2-D or 3-D combustion diagnostics including non-uniform flames.

Wave-packet rectification in nonlinear electronic systems: A tunable Aharonov-Bohm diode

PubMed Central

Li, Yunyun; Zhou, Jun; Marchesoni, Fabio; Li, Baowen

2014-01-01

Rectification of electron wave-packets propagating along a quasi-one dimensional chain is commonly achieved via the simultaneous action of nonlinearity and longitudinal asymmetry, both confined to a limited portion of the chain termed wave diode. However, it is conceivable that, in the presence of an external magnetic field, spatial asymmetry perpendicular to the direction of propagation suffices to ensure rectification. This is the case of a nonlinear ring-shaped lattice with different upper and lower halves (diode), which is attached to two elastic chains (leads). The resulting device is mirror symmetric with respect to the ring vertical axis, but mirror asymmetric with respect to the chain direction. Wave propagation along the two diode paths can be modeled for simplicity by a discrete Schrödinger equation with cubic nonlinearities. Numerical simulations demonstrate that, thanks to the Aharonov-Bohm effect, such a diode can be operated by tuning the magnetic flux across the ring. PMID:24691462

Coexistence of multiple bifurcation modes in memristive diode-bridge-based canonical Chua's circuit

NASA Astrophysics Data System (ADS)

Bao, Bocheng; Xu, Li; Wu, Zhimin; Chen, Mo; Wu, Huagan

2018-07-01

Based on a memristive diode bridge cascaded with series resistor and inductor filter, a modified memristive canonical Chua's circuit is presented in this paper. With the modelling of the memristive circuit, a normalised system model is built. Stability analyses of the equilibrium points are performed and bifurcation behaviours are investigated by numerical simulations and hardware experiments. Most extraordinary in the memristive circuit is that within a parameter region, coexisting phenomenon of multiple bifurcation modes is emerged under six sets of different initial values, resulting in the coexistence of four sets of topologically different and disconnected attractors. These coexisting attractors are easily captured by repeatedly switching on and off the circuit power supplies, which well verify the numerical simulations.

Beam shaping of laser diode radiation by waveguides with arbitrary cladding geometry written with fs-laser radiation.

PubMed

Beckmann, Dennis; Schnitzler, Daniel; Schaefer, Dagmar; Gottmann, Jens; Kelbassa, Ingomar

2011-12-05

Waveguides with arbitrary cross sections are written in the volume of Al(2)O(3)-crystals using tightly focused femtosecond laser radiation. Utilizing a scanning system with large numerical aperture, complex cladding geometries are realized with a precision around 0.5 µm and a scanning speed up to 100 mm/s. Individual beam and mode shaping of laser diode radiation is demonstrated by varying the design of the waveguide cladding. The influence of the writing parameters on the waveguide properties are investigated resulting in a numerical aperture of the waveguides in the range of 0.1. This direct laser writing technique enables optical devices which could possibly replace bulky beam shaping setups with an integrated solution.

Enhanced Thermionic Emission and Low 1/f Noise in Exfoliated Graphene/GaN Schottky Barrier Diode.

PubMed

Kumar, Ashutosh; Kashid, Ranjit; Ghosh, Arindam; Kumar, Vikram; Singh, Rajendra

2016-03-01

Temperature-dependent electrical transport characteristics of exfoliated graphene/GaN Schottky diodes are investigated and compared with conventional Ni/GaN Schottky diodes. The ideality factor of graphene/GaN and Ni/GaN diodes are measured to be 1.33 and 1.51, respectively, which is suggestive of comparatively higher thermionic emission current in graphene/GaN diode. The barrier height values for graphene/GaN diode obtained using thermionic emission model and Richardson plots are found to be 0.60 and 0.72 eV, respectively, which are higher than predicted barrier height ∼0.40 eV as per the Schottky-Mott model. The higher barrier height is attributed to hole doping of graphene due to graphene-Au interaction which shifts the Fermi level in graphene by ∼0.3 eV. The magnitude of flicker noise of graphene/GaN Schottky diode increases up to 175 K followed by its decrease at higher temperatures. This indicates that diffusion currents and barrier inhomogeneities dominate the electronic transport at lower and higher temperatures, respectively. The exfoliated graphene/GaN diode is found to have lower level of barrier inhomogeneities than conventional Ni/GaN diode, as well as earlier reported graphene/GaN diode fabricated using chemical vapor deposited graphene. The lesser barrier inhomogeneities in graphene/GaN diode results in lower flicker noise by 2 orders of magnitude as compared to Ni/GaN diode. Enhanced thermionic emission current, lower level of inhomogeneities, and reduced flicker noise suggests that graphene-GaN Schottky diodes may have the underlying trend for replacing metal-GaN Schottky diodes.

A randomised controlled trial of coblation, diode laser and cold dissection in paediatric tonsillectomy.

PubMed

Elbadawey, M R; Hegazy, H M; Eltahan, A E; Powell, J

2015-11-01

This study aimed to compare the efficacy of diode laser, coblation and cold dissection tonsillectomy in paediatric patients. A total of 120 patients aged 10-15 years with recurrent tonsillitis were recruited. Participants were prospectively randomised to diode laser, coblation or cold dissection tonsillectomy. Operative time and blood loss were recorded. Pain was recorded on a Wong-Baker FACES(®) pain scale. The operative time (10 ± 0.99 minutes), blood loss (20 ± 0.85 ml) and pain were significantly lower with coblation tonsillectomy than with cold dissection tonsillectomy (20 ± 1.0 minutes and 30 ± 1.0 ml; p = 0.0001) and diode laser tonsillectomy (15 ± 0.83 minutes and 25 ± 0.83 ml; p = 0.0001). Diode laser tonsillectomy had a shorter operative time (p = 0.0001) and less blood loss (p = 0.001) compared with cold dissection tonsillectomy. However, at post-operative day seven, the diode laser tonsillectomy group had significantly higher pain scores compared with the cold dissection (p = 0.042) and coblation (p = 0.04) tonsillectomy groups. Both coblation and diode laser tonsillectomy are associated with significantly reduced blood loss and shorter operative times compared with cold dissection tonsillectomy. However, we advocate coblation tonsillectomy because of the lower post-operative pain scores compared with diode laser and cold dissection tonsillectomy.

On-chip optical diode based on silicon photonic crystal heterojunctions.

PubMed

Wang, Chen; Zhou, Chang-Zhu; Li, Zhi-Yuan

2011-12-19

Optical isolation is a long pursued object with fundamental difficulty in integrated photonics. As a step towards this goal, we demonstrate the design, fabrication, and characterization of on-chip wavelength-scale optical diodes that are made from the heterojunction between two different silicon two-dimensional square-lattice photonic crystal slabs with directional bandgap mismatch and different mode transitions. The measured transmission spectra show considerable unidirectional transmission behavior, in good agreement with numerical simulations. The experimental realization of on-chip optical diodes with wavelength-scale size using all-dielectric, passive, and linear silicon photonic crystal structures may help to construct on-chip optical logical devices without nonlinearity or magnetism, and would open up a road towards photonic computers.

[Measurement of cardiac output by thermodilution with a diode as a temperature sensor].

PubMed

Díaz Fernández, A; Benítez, D; Sánchez Tello, G; Márquez, L A

1979-01-01

An area integrator for the thermodilution curve in cardiac output measurement is described. A new temperature sensor is used, a diode with some advantages over the thermistor normally used. The main advantages are: easy calibration and replacement, and broad range of linearity. The cardiac output values obtained in dog with the integrator follow a linear relationship with those of the flowmeter. In simultaneous measurements the correlation is R = 0.96. Using a diode as temperature sensor a modification of the Steward Hamilton equation (used for thermistor) is necessary. With this new equation a monogram is performed to calculate the cardiac output from the area given by the numerical integrator.

Trap-assisted tunneling in InGaN/GaN single-quantum-well light-emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Auf der Maur, M., E-mail: auf.der.maur@ing.uniroma2.it; Di Carlo, A.; Galler, B.

Based on numerical simulation and comparison with measured current characteristics, we show that the current in InGaN/GaN single-quantum-well light-emitting diodes at low forward bias can be accurately described by a standard trap-assisted tunneling model. The qualitative and quantitative differences in the current characteristics of devices with different emission wavelengths are demonstrated to be correlated in a physically consistent way with the tunneling model parameters.

Numerical and experimental determination of weld pool shape during high-power diode laser welding

NASA Astrophysics Data System (ADS)

Klimpel, Andrzej; Lisiecki, Aleksander; Szymanski, Andrzej; Hoult, Anthony P.

2003-10-01

In this paper, results of investigations on the shape of weld pool during High Power Diode Laser (HPDL) welding are presented. The results of tests showed that the shape of weld pool and mechanism of laser welding with a rectangular pattern of 808 nm laser radiation differs distinctly from previous laser welding mechanisms. For all power densities the conduction mode welds were observed and weld pool geometry depends significantly on the welding parameters.

CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES: Research on reverse recovery characteristics of SiGeC p-i-n diodes

NASA Astrophysics Data System (ADS)

Gao, Yong; Liu, Jing; Yang, Yuan

2008-12-01

This paper analyses the reverse recovery characteristics and mechanism of SiGeC p-i-n diodes. Based on the integrated systems engineering (ISE) data, the critical physical models of SiGeC diodes are proposed. Based on hetero-junction band gap engineering, the softness factor increases over six times, reverse recovery time is over 30% short and there is a 20% decrease in peak reverse recovery current for SiGeC diodes with 20% of germanium and 0.5% of carbon, compared to Si diodes. Those advantages of SiGeC p-i-n diodes are more obvious at high temperature. Compared to lifetime control, SiGeC technique is more suitable for improving diode properties and the tradeoff between reverse recovery time and forward voltage drop can be easily achieved in SiGeC diodes. Furthermore, the high thermal-stability of SiGeC diodes reduces the costs of further process steps and offers more freedoms to device design.

Modulation of distributed feedback (DFB) laser diode with the autonomous Chua's circuit: Theory and experiment

NASA Astrophysics Data System (ADS)

Talla Mbé, Jimmi Hervé; Woafo, Paul

2018-03-01

We report on a simple way to generate complex optical waveforms with very cheap and accessible equipments. The general idea consists in modulating a laser diode with an autonomous electronic oscillator, and in the case of this study, we use a distributed feedback (DFB) laser diode pumped with an electronic Chua's circuit. Based on the adiabatic P-I characteristics of the laser diode at low frequencies, we show that when the total pump is greater than the laser threshold, it is possible to convert the electrical waveforms of the Chua's circuit into optical carriers. But, if that is not the case, the on-off dynamical behavior of the laser permits to obtain many other optical waveform signals, mainly pulses. Our numerical results are consistent with experimental measurements. The work presents the advantage of extending the range of possible chaotic dynamics of the laser diodes in the time domains (millisecond) where it is not usually expected with conventional modulation techniques. Moreover, this new technique of laser diodes modulation brings a general benefit in the physical equipment, reduces their cost and congestion so that, it can constitute a step towards photonic integrated circuits.

High efficiency and broadband acoustic diodes

NASA Astrophysics Data System (ADS)

Fu, Congyi; Wang, Bohan; Zhao, Tianfei; Chen, C. Q.

2018-01-01

Energy transmission efficiency and working bandwidth are the two major factors limiting the application of current acoustic diodes (ADs). This letter presents a design of high efficiency and broadband acoustic diodes composed of a nonlinear frequency converter and a linear wave filter. The converter consists of two masses connected by a bilinear spring with asymmetric tension and compression stiffness. The wave filter is a linear mass-spring lattice (sonic crystal). Both numerical simulation and experiment show that the energy transmission efficiency of the acoustic diode can be improved by as much as two orders of magnitude, reaching about 61%. Moreover, the primary working band width of the AD is about two times of the cut-off frequency of the sonic crystal filter. The cut-off frequency dependent working band of the AD implies that the developed AD can be scaled up or down from macro-scale to micro- and nano-scale.

Short-wavelength InAlGaAs/AlGaAs quantum dot superluminescent diodes

NASA Astrophysics Data System (ADS)

Liang, De-Chun; An, Qi; Jin, Peng; Li, Xin-Kun; Wei, Heng; Wu, Ju; Wang, Zhan-Guo

2011-10-01

This paper reports the fabrication of J-shaped bent-waveguide superluminescent diodes utilizing an InAlGaAs/AlGaAs quantum dot active region. The emission spectrum of the device is centred at 884 nm with a full width at half maximum of 37 nm and an output power of 18 mW. By incorporating an Al composition into the quantum dot active region, short-wavelength superluminescent diode devices can be obtained. An intersection was found for the light power-injection current curves measured from the straight-waveguide facet and the bent-waveguide facet, respectively. The result is attributed to the conjunct effects of the gain and the additional loss of the bent waveguide. A numerical simulation is performed to verify the qualitative explanation. It is shown that bent waveguide loss is an important factor that affects the output power of J-shaped superluminescent diode devices.

Short-Term Audiological Results of Diode Laser in Comparison with Manual Perforation in Stapes Surgery

PubMed Central

Hamerschmidt, Rogerio; Saab, Stephanie Sbizera; Carvalho, Bettina; Carmo, Carolina do

2018-01-01

Introduction  Diode laser is a new alternative in stapes surgery for otosclerosis. The present study is the first to compare the short-term results of the surgery performed using diode laser to those obtained through the conventional fenestration technique. Objective  To use audiometry to establish a comparative analysis between the functional results obtained through surgery for otosclerosis using diode laser and the conventional technique. Method  Audiometric evaluation of 12 patients submitted to stapes surgery for otosclerosis, using diode laser or conventional fenestration by needle and drills, between 2014 and 2015. Each group was composed of 6 patients. Pre and post-operative measures were compared for three months in both groups. The speech recognition threshold, the air and bone conduction threshold, as well as the gap between them at 500 Hz, 1 KHz, 2 KHz and 4 KHz were measured. Results  Significant difference in bone conduction and SRT was observed when compared post- and preoperative results in the diode group. However diode and conventional technique groups presented significant differences in air conduction and air-bone gap, suggesting that both can provide functional improvement. Conclusion  Laser stapedotomy is a safe technique with good results. Both laser surgery and the conventional technique have improved the hearing of patients with a discreet advantage for the diode laser. Further prospective and randomized clinical trials are required to disclose all possible benefits of the stapes surgery using diode laser. PMID:29619098

Short-Term Audiological Results of Diode Laser in Comparison with Manual Perforation in Stapes Surgery.

PubMed

Hamerschmidt, Rogerio; Saab, Stephanie Sbizera; Carvalho, Bettina; Carmo, Carolina do

2018-04-01

Introduction  Diode laser is a new alternative in stapes surgery for otosclerosis. The present study is the first to compare the short-term results of the surgery performed using diode laser to those obtained through the conventional fenestration technique. Objective  To use audiometry to establish a comparative analysis between the functional results obtained through surgery for otosclerosis using diode laser and the conventional technique. Method  Audiometric evaluation of 12 patients submitted to stapes surgery for otosclerosis, using diode laser or conventional fenestration by needle and drills, between 2014 and 2015. Each group was composed of 6 patients. Pre and post-operative measures were compared for three months in both groups. The speech recognition threshold, the air and bone conduction threshold, as well as the gap between them at 500 Hz, 1 KHz, 2 KHz and 4 KHz were measured. Results  Significant difference in bone conduction and SRT was observed when compared post- and preoperative results in the diode group. However diode and conventional technique groups presented significant differences in air conduction and air-bone gap, suggesting that both can provide functional improvement. Conclusion  Laser stapedotomy is a safe technique with good results. Both laser surgery and the conventional technique have improved the hearing of patients with a discreet advantage for the diode laser. Further prospective and randomized clinical trials are required to disclose all possible benefits of the stapes surgery using diode laser.

Alternating InGaN barriers with GaN barriers for enhancing optical performance in InGaN light-emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Yujue; Zeng, Yiping, E-mail: ypzeng@semi.ac.cn

2015-01-21

InGaN-based light-emitting diodes (LEDs) with some specific designs on the quantum barrier layers by alternating InGaN barriers with GaN barriers are proposed and studied numerically. In the proposed structure, simulation results show that the carriers are widely dispersed in the multi-quantum well active region, and the radiative recombination rate is efficiently improved and the electron leakage is suppressed accordingly, due to the appropriate band engineering. The internal quantum efficiency and light-output power are thus markedly enhanced and the efficiency droop is smaller, compared to the original structures with GaN barriers or InGaN barriers. Moreover, the gradually decrease of indium compositionmore » in the alternating quantum barriers can further promote the LED performance because of the more uniform carrier distribution, which provides us a simple but highly effective approach for high-performance LED applications.« less

Employment of single-diode model to elucidate the variations in photovoltaic parameters under different electrical and thermal conditions

PubMed Central

Hameed, Shilan S.; Aziz, Fakhra; Sulaiman, Khaulah; Ahmad, Zubair

2017-01-01

In this research work, numerical simulations are performed to correlate the photovoltaic parameters with various internal and external factors influencing the performance of solar cells. Single-diode modeling approach is utilized for this purpose and theoretical investigations are compared with the reported experimental evidences for organic and inorganic solar cells at various electrical and thermal conditions. Electrical parameters include parasitic resistances (Rs and Rp) and ideality factor (n), while thermal parameters can be defined by the cells temperature (T). A comprehensive analysis concerning broad spectral variations in the short circuit current (Isc), open circuit voltage (Voc), fill factor (FF) and efficiency (η) is presented and discussed. It was generally concluded that there exists a good agreement between the simulated results and experimental findings. Nevertheless, the controversial consequence of temperature impact on the performance of organic solar cells necessitates the development of a complementary model which is capable of well simulating the temperature impact on these devices performance. PMID:28793325

Optimising the efficiency of pulsed diode pumped Yb:YAG laser amplifiers for ns pulse generation.

PubMed

Ertel, K; Banerjee, S; Mason, P D; Phillips, P J; Siebold, M; Hernandez-Gomez, C; Collier, J C

2011-12-19

We present a numerical model of a pulsed, diode-pumped Yb:YAG laser amplifier for the generation of high energy ns-pulses. This model is used to explore how optical-to-optical efficiency depends on factors such as pump duration, pump spectrum, pump intensity, doping concentration, and operating temperature. We put special emphasis on finding ways to achieve high efficiency within the practical limitations imposed by real-world laser systems, such as limited pump brightness and limited damage fluence. We show that a particularly advantageous way of improving efficiency within those constraints is operation at cryogenic temperature. Based on the numerical findings we present a concept for a scalable amplifier based on an end-pumped, cryogenic, gas-cooled multi-slab architecture.

A numerical study on the charge transport in TPD/Alq3-based organic light emitting diodes.

PubMed

Kim, K S; Hwang, Y W; Lee, H G; Won, T Y

2014-08-01

We report our simulation study on the charge transport characteristic of the multi-layer structure for organic light emitting diodes (OLEDs). We performed a numerical simulation on a multilayer structure comprising a hole transport layer (HTL), an emission layer (EML), and an electron transport layer (ETL) between both electrodes. The material of the HTL is TPD (N,N'-Bis (3-methylphenyl)-N,N'-bis(phenyl) benzidine), and the ETL includes Alq3 (Tris (8-hyroxyquinolinato) aluminium). Here, we investigated the parameters such as recombination rates which influence the efficiency of the charge transport between layers in bilayer OLEDs. We also analyzed a transient response during the turn on/off period and the carrier transport in accordance with the variation of the injection barrier and applied voltage. In addition, our numerical simulation revealed that the insertion of the EML affects the photonic characteristics in bilayer structure and also the efficiency due to the difference in the internal barrier height.

Film Reviews

ERIC Educational Resources Information Center

Dowling, John, Ed.

1976-01-01

Reviews five instructional films on: P-N junctions; crystal diodes; nuclear fusion research; Schlieren photography; and the energy crisis; including discussions of solar, nuclear, and fossil fuel energy. Also lists numerous other available films. (MLH)

Improvement of carrier injection symmetry and quantum efficiency in InGaN light-emitting diodes with Mg delta-doped barriers

NASA Astrophysics Data System (ADS)

Zhang, F.; Can, N.; Hafiz, S.; Monavarian, M.; Das, S.; Avrutin, V.; Özgür, Ü.; Morkoç, H.

2015-05-01

The effect of δ-doping of In0.06Ga0.94N barriers with Mg on the quantum efficiency of blue light-emitting-diodes (LEDs) with active regions composed of 6 (hex) 3-nm In0.15Ga0.85N is investigated. Compared to the reference sample, δ-doping of the first barrier on the n-side of the LED structure improves the peak external quantum efficiency (EQE) by 20%, owing to the increased hole concentration in the wells adjacent to the n-side, as confirmed by numerical simulations of carrier distributions across the active region. Doping the second barrier, in addition to the first one, did not further enhance the EQE, which likely indicates compensation of improved hole injection by degradation of the active region quality due to Mg doping. Both LEDs with Mg δ-doped barriers effectively suppress the drop of efficiency at high injection when compared to the reference sample, and the onset of EQE peak roll-off shifts from ˜80 A/cm2 in the reference LED to ˜120 A/cm2 in the LEDs with Mg δ-doped barriers.

Diode laser-induced tissue effects: in vitro tissue model study and in vivo evaluation of wound healing following non-contact application.

PubMed

Havel, Miriam; Betz, Christian S; Leunig, Andreas; Sroka, Ronald

2014-08-01

The basic difference between the various common medical laser systems is the wavelength of the emitted light, leading to altered light-tissue interactions due to the optical parameters of the tissue. This study examines laser induced tissue effects in an in vitro tissue model using 1,470 nm diode laser compared to our standard practice for endonasal applications (940 nm diode laser) under standardised and reproducible conditions. Additionally, in vivo induced tissue effects following non-contact application with focus on mucosal healing were investigated in a controlled intra-individual design in patients treated for hypertrophy of nasal turbinate. A certified diode laser system emitting the light of λ = 1470 nm was evaluated with regards to its tissue effects (ablation, coagulation) in an in vitro setup on porcine liver and turkey muscle tissue model. To achieve comparable macroscopic tissue effects the laser fibres (600 µm core diameter) were fixed to a computer controlled stepper motor and the laser light was applied in a reproducible procedure under constant conditions. For the in vivo evaluation, 20 patients with nasal obstruction due to hyperplasia of inferior nasal turbinates were included in this prospective randomised double-blinded comparative trial. The endoscopic controlled endonasal application of λ = 1470 nm on the one and λ = 940 nm on the other side, both in 'non-contact' mode, was carried out as an outpatient procedure under local anaesthesia. The postoperative wound healing process (mucosal swelling, scab formation, bleeding, infection) was endoscopically documented and assessed by an independent physician. In the experimental setup, the 1,470 nm laser diode system proved to be efficient in inducing tissue effects in non-contact mode with a reduced energy factor of 5-10 for highly perfused liver tissue to 10-20 for muscle tissue as compared to the 940 nm diode laser system. In the in vivo evaluation scab formation following laser surgery as assessed clinically on endonasal endoscopy was significantly reduced on 1,470 nm treated site compared to 940 nm diode laser treated site. Diode laser system (1,470 nm) induces efficient tissue effects compared to 940 nm diode laser system as shown in the tissue model experiment. From the clinical point of view, the healing process following non-contact diode laser application revealed to be improved using 1,470 nm diode laser compared to our standard diode laser practise with 940 nm. © 2014 Wiley Periodicals, Inc.

Design of 6 kw fiber-coupled system for semiconductor laser

NASA Astrophysics Data System (ADS)

Wu, Yulong; Dong, Zhiyong; Chen, Yongqi; Qi, Yunfei; Ding, Lushuang; Zhao, Pengfei; Zou, Yonggang; Xu, Li; Lin, Xuechun

2016-10-01

In this paper, we present the design of a 6 kW fiber-coupled laser diode system by using ZEMAX, and power scaling and fiber coupling techniques for high-power laser diode stacks were introduced in detail. Beams emitted from eight laser diode stacks comprised of four 960 W stacks with center wavelength of 938 nm and four 960 W stacks with center wavelength of 976 nm are combined and coupled into a standard fiber with a core diameter of 800 μm and numerical aperture of 0.22. Simulative result shows that the final power came out of the fiber could reach 6283.9 W, the fiber-coupling efficiency is 87%, and the brightness is 8.2 MW/ (cm2·sr).

Can small field diode correction factors be applied universally?

PubMed

Liu, Paul Z Y; Suchowerska, Natalka; McKenzie, David R

2014-09-01

Diode detectors are commonly used in dosimetry, but have been reported to over-respond in small fields. Diode correction factors have been reported in the literature. The purpose of this study is to determine whether correction factors for a given diode type can be universally applied over a range of irradiation conditions including beams of different qualities. A mathematical relation of diode over-response as a function of the field size was developed using previously published experimental data in which diodes were compared to an air core scintillation dosimeter. Correction factors calculated from the mathematical relation were then compared those available in the literature. The mathematical relation established between diode over-response and the field size was found to predict the measured diode correction factors for fields between 5 and 30 mm in width. The average deviation between measured and predicted over-response was 0.32% for IBA SFD and PTW Type E diodes. Diode over-response was found to be not strongly dependent on the type of linac, the method of collimation or the measurement depth. The mathematical relation was found to agree with published diode correction factors derived from Monte Carlo simulations and measurements, indicating that correction factors are robust in their transportability between different radiation beams. Copyright © 2014. Published by Elsevier Ireland Ltd.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bian, Lei, E-mail: bianlei@pku.edu.cn; Pang, Gang, E-mail: 1517191281@qq.com; Tang, Shaoqiang, E-mail: maotang@pku.edu.cn

For the Schrödinger–Poisson system, we propose an ALmost EXact (ALEX) boundary condition to treat accurately the numerical boundaries. Being local in both space and time, the ALEX boundary conditions are demonstrated to be effective in suppressing spurious numerical reflections. Together with the Crank–Nicolson scheme, we simulate a resonant tunneling diode. The algorithm produces numerical results in excellent agreement with those in Mennemann et al. [1], yet at a much reduced complexity. Primary peaks in wave function profile appear as a consequence of quantum resonance, and should be considered in selecting the cut-off wave number for numerical simulations.

Construction of a Visible Diode Laser Source for Free Radical Photochemistry and Spectroscopy Experiments

NASA Technical Reports Server (NTRS)

Newman, Bronjelyn; Halpern, Joshua B.

1997-01-01

Tunable diode lasers are reliable sources of narrow-band light and comparatively cheap. Optical feedback simplifies frequency tuning of the laser diodes. We are building an inexpensive diode laser system incorporating optical feedback from a diffraction grating. The external optical cavity can be used with lasers that emit between 2 and 100 mW, and will also work if they are pulsed, although this will significantly degrade the bandwidth. The diode laser output power and bandwidth are comparable to CW dye lasers used in kinetics and dynamics experiments. However, their cost and maintenance will be much less as will alignment time. We intend to use the diode lasers to investigate CN and C2 kinetics as well as to study dissociation dynamics of atmospherically important molecules.

Comparison of the effect of diode laser versus intense pulsed light in axillary hair removal.

PubMed

Ormiga, Patricia; Ishida, Cleide Eiko; Boechat, Alvaro; Ramos-E-Silva, Marcia

2014-10-01

Devices such as diode laser and intense pulsed light (IPL) are in constant development aiming at permanent hair removal, but there are few comparative studies between these technologies. The objective was to comparatively assess axillary hair removal performed by diode laser and IPL and to obtain parameters of referred pain and evolution response for each method. A comparative prospective, double-blind, and randomized study of axillary hair removal performed by the diode laser and IPL was conducted in 21 females. Six sessions were held with application of the diode laser in one axilla and the IPL in the other, with intervals of 30 days and follow-up of 6 months after the last session. Clinical photographs and digital dermoscopy for hair counts in predefined and fixed fields of the treated areas were performed before, 2 weeks after the sixth session, and 6 months after the end of treatment. A questionnaire to assess the pain was applied. The number of hair shafts was significantly reduced with the diode laser and IPL. The diode laser was more effective, although more painful than the IPL. No serious, adverse, or permanent effects were observed with both technologies. Both diode laser and the IPL are effective, safe, and able to produce lasting results in axillary hair removal.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Altsybeyev, V.V., E-mail: v.altsybeev@spbu.ru; Ponomarev, V.A.

The particle tracking method with a so-called gun iteration for modeling the space charge is discussed in the following paper. We suggest to apply the emission model based on the Gauss's law for the calculation of the space charge limited current density distribution using considered method. Based on the presented emission model we have developed a numerical algorithm for this calculations. This approach allows us to perform accurate and low time consumpting numerical simulations for different vacuum sources with the curved emitting surfaces and also in the presence of additional physical effects such as bipolar flows and backscattered electrons. Themore » results of the simulations of the cylindrical diode and diode with elliptical emitter with the use of axysimmetric coordinates are presented. The high efficiency and accuracy of the suggested approach are confirmed by the obtained results and comparisons with the analytical solutions.« less

Electrical and carrier transport properties of the Au/Y2O3/n-GaN metal-insulator-semiconductor (MIS) diode with rare-earth oxide interlayer

NASA Astrophysics Data System (ADS)

Venkata Prasad, C.; Rajagopal Reddy, V.; Choi, Chel-Jong

2017-04-01

The electrical and transport properties of rare-earth Y2O3 on n-type GaN with Au electrode have been investigated by current-voltage and capacitance-voltage techniques at room temperature. The Au/Y2O3/n-GaN metal-insulator-semiconductor (MIS) diode shows a good rectification behavior compared to the Au/n-GaN metal-semiconductor (MS) diode. Statistical analysis showed that a mean barrier height (BH) and ideality factor are 0.78 eV and 1.93, and 0.96 eV and 2.09 for the Au/n-GaN MS and Au/Y2O3/n-GaN MIS diodes, respectively. Results indicate that the high BH is obtained for the MIS diode compared to the MS diode. The BH, ideality factor and series resistance are also estimated by Cheung's function and Norde method. From the forward current-voltage data, the interface state density ( N SS) is estimated for both the MS and MIS Schottky diodes, and found that the estimated N SS is lower for the MIS diode compared to the MS diode. The results reveal that the introduction of Y2O3 interlayer facilitated the reduction of N SS of the Au/n-GaN interface. Experimental results suggest that the Poole-Frenkel emission is a dominant conduction mechanism in the reverse bias region of both Au/n-GaN MS and Au/Y2O3/n-GaN MIS diodes.

Modification of electrical properties of Au/n-type InP Schottky diode with a high-k Ba0.6Sr0.4TiO3 interlayer

NASA Astrophysics Data System (ADS)

Thapaswini, P. Prabhu; Padma, R.; Balaram, N.; Bindu, B.; Rajagopal Reddy, V.

2016-05-01

Au/Ba0.6Sr0.4TiO3 (BST)/n-InP metal/insulator/semiconductor (MIS) Schottky diodes have been analyzed by current-voltage (I-V) and capacitance-voltage (C-V) measurements. The surface morphology of the BST films on InP is fairly smooth. The Au/BST/n-InP MIS Schottky diode shows better rectification ratio and low leakage current compared to the conventional Au/n-InP metal-semiconductor (MS) Schottky diode. Higher barrier height is achieved for the MIS Schottky diode compared to the MS Schottky diode. The Norde and Cheung's methods are employed to determine the barrier height, ideality factor and series resistance. The interface state density (NSS) is determined from the forward bias I-V data for both the MS and MIS Schottky diodes. Results reveal that the NSS of the MIS Schottky diode is lower than that of the MS Schottky diode. The Poole-Frenkel emission is found dominating the reverse current in both Au/n-InP MS and Au/BST/n-InP MIS Schottky diodes, indicating the presence of structural defects and trap levels in the dielectric film.

Fabrication and optimization of a whiskerless Schottky barrier diode for submillimeter wave applications

NASA Technical Reports Server (NTRS)

Bishop, W.; Mattauch, R. J.

1990-01-01

The following accomplishments were made towards the goal of an optimized whiskerless diode chip for submillimeter wavelength applications. (1) Surface channel whiskerless diode structure was developed which offers excellent DC and RF characteristics, reduced shunt capacitance and simplified fabrication compared to mesa and proton isolated structures. (2) Reliable fabrication technology was developed for the surface channel structure. The new anode plating technology is a major improvement. (3) DC and RF characterization of the surface channel diode was compared with whisker contacted diodes. This data indicates electrical performance as good as the best reported for similar whisker contacted devices. (4) Additional batches of surface channel diodes were fabricated with excellent I-V and reduced shunt capacitance. (5) Large scale capacitance modelinng was done for the planar diode structure. This work revealed the importance of removing the substrate gallium arsenide for absolute minimum pad capacitance. (6) A surface channel diode was developed on quartz substrate and this substrate was completely removed after diode mounting for minimum parasitic capacitance. This work continues with the goal of producing excellent quality submillimeter wavelength planar diodes which satisfy the requirements of easy handling and robustness. These devices will allow the routine implementation of Schottky receivers into space-based applications at frequencies as high as 1 THz, and, in the future, beyond.

Use of high-power diode lasers for hardening and thermal conduction welding of metals

NASA Astrophysics Data System (ADS)

Klocke, Fritz; Demmer, Axel; Zaboklicki, A.

1997-08-01

CO2 and Nd:YAG high power lasers have become established as machining tools in industrial manufacturing over the last few years. The most important advantages compared to conventional processing techniques lie in the absence of forces introduced by the laser into the workpiece and in the simple arid highly accurate control in terms ofpositioning and timing making the laser a universally applicable, wear-free and extremely flexible tool /1,2/. The laser can be utilised costeffectively in numerous manufacturing processes but there are also further applications for the laser which produce excellent results from a technical point of view, but are not justified in terms of cost. The extensive use of lasers, particularly in small companies and workshops, is hindered by two main reasons: the complexity and size ofthe laser source and plant and the high investment costs /3/. A new generation of lasers, the high power diode lasers (HDL), combines high performance with a compact design, making the laser a cheap and easy to use tool with many applications /3,4,5,6/. In the diode laser, the laser beam is generated by a microelectronic diode which transforms electrical energy directly into laser energy. Diode lasers with low power outputs have, for some time, been making their mark in our everyday lives: they are used in CD players, laser printers and scanners at cash tills. Modern telecommunications would be impossible without these lasers which enable information to be transmitted in the form oflight impulses through optical fibres. They can also be found in compact precision measurement instrumentation - range fmders, interferometers and pollutant analysis devices /3,6/. In the field of material processing, the first applications ofthe laser, such as for soldering, inscribing, surface hardening and plastic or heat conduction welding, will exceed the limits ofthe relatively low performance output currently available. The diode laser has a shorter wavelength than the CO2 and Nd:YAG lasers making it more favourable in terms ofthe absorption behaviour ofthe laser beam - an advantage that will soon have a significant effect on the range of its applications.

Characterization of resonant tunneling diodes for microwave and millimeter-wave detection

NASA Technical Reports Server (NTRS)

Mehdi, I.; East, J. R.; Haddad, G. I.

1991-01-01

The authors report on the direct detection capabilities of resonant tunneling diodes in the 10-100 GHz range. An open circuit voltage sensitivity of 1750 mV/mW (in Ka-band) was measured. This is higher than the sensitivity of comparatively based commercially available solid-state detectors. The detector properties are a strong function of diode bias and the measured tangential signal sensitivity (-32 dBm at Ka-band with 1-MHz bandwidth) and the dynamic range (25 dB) of the diode are smaller compared to other solid-state detectors.

Improvement in reduced-mode (REM) diodes enable 315 W from 105-μm 0.15-NA fiber-coupled modules

NASA Astrophysics Data System (ADS)

Kanskar, M.; Bao, L.; Chen, Z.; Dawson, D.; DeVito, M.; Dong, W.; Grimshaw, M.; Guan, X.; Hemenway, M.; Martinsen, R.; Urbanek, W.; Zhang, S.

2018-02-01

High-power, high-brightness diode lasers have been pursued for many applications including fiber laser pumping, materials processing, solid-state laser pumping, and consumer electronics manufacturing. In particular, 915 nm - and 976 nm diodes are of interest as diode pumps for the kilowatt CW fiber lasers. As a result, there have been many technical thrusts for driving the diode lasers to have both high power and high brightness to achieve high-performance and reduced manufacturing costs. This paper presents our continued progress in the development of high brightness fiber-coupled product platform, nLIGHT element®. In the past decade, the power coupled into a single 105 μm and 0.15 NA fiber has increased by over a factor of ten through improved diode laser brightness and the development of techniques for efficiently coupling multiple emitters. In this paper, we demonstrate further brightness improvement and power-scaling enabled by both the rise in chip brightness/power and the increase in number of chips coupled into a given numerical aperture. We report a new chip technology using x-REM design with brightness as high as 4.3 W/mm-mrad at a BPP of 3 mm-mrad. We also report record 315 W output from a 2×12 nLIGHT element with 105 μm diameter fiber using x-REM diodes and these diodes will allow next generation of fiber-coupled product capable of 250W output power from 105 μm/0.15 NA beam at 915 nm.

New alternatives for laser vaporization of the prostate: experimental evaluation of a 980-, 1,318- and 1,470-nm diode laser device.

PubMed

Wezel, Felix; Wendt-Nordahl, Gunnar; Huck, Nina; Bach, Thorsten; Weiss, Christel; Michel, Maurice Stephan; Häcker, Axel

2010-04-01

Several diode laser systems were introduced in recent years for the minimal-invasive surgical therapy of benign prostate enlargement. We investigated the ablation capacities, hemostatic properties and extend of tissue necrosis of different diode lasers at wavelengths of 980, 1,318 and 1,470 nm and compared the results to the 120 W GreenLight HPS laser. The laser devices were evaluated in an ex vivo model using isolated porcine kidneys. The weight difference of the porcine kidneys after 10 min of laser vaporization defined the amount of ablated tissue. Blood loss was measured in blood-perfused kidneys following laser vaporization. Histological examination was performed to assess the tissue effects. The side-firing 980 and 1,470 nm diode lasers displayed similar ablative capacities compared to the GreenLight HPS laser (n.s.). The 1,318-nm laser, equipped with a bare-ended fiber, reached a higher ablation rate compared to the other laser devices (each P < 0.05). A calculated 'output power efficiency per watt' revealed that the 1,318-nm laser with a bare-ended fiber reached the highest rate compared to the side-firing devices (each P < 0.0001). All three diode lasers showed superior hemostatic properties compared to the GreenLight HPS laser (each P < 0.01). The extend of morphological tissue necrosis was 4.62 mm (1,318 nm), 1.30 mm (1,470 nm), 4.18 mm (980 nm) and 0.84 mm (GreenLight HPS laser), respectively. The diode lasers offered similar ablative capacities and improved hemostatic properties compared to the 120 W GreenLight HPS laser in this experimental ex vivo setting. The higher tissue penetration of the diode lasers compared to the GreenLight HPS laser may explain improved hemostasis.

Coexistence of Multiple Attractors in an Active Diode Pair Based Chua’s Circuit

NASA Astrophysics Data System (ADS)

Bao, Bocheng; Wu, Huagan; Xu, Li; Chen, Mo; Hu, Wen

This paper focuses on the coexistence of multiple attractors in an active diode pair based Chua’s circuit with smooth nonlinearity. With dimensionless equations, dynamical properties, including boundness of system orbits and stability distributions of two nonzero equilibrium points, are investigated, and complex coexisting behaviors of multiple kinds of disconnected attractors of stable point attractors, limit cycles and chaotic attractors are numerically revealed. The results show that unlike the classical Chua’s circuit, the proposed circuit has two stable nonzero node-foci for the specified circuit parameters, thereby resulting in the emergence of multistability phenomenon. Based on two general impedance converters, the active diode pair based Chua’s circuit with an adjustable inductor and an adjustable capacitor is made in hardware, from which coexisting multiple attractors are conveniently captured.

Characterization of quantum well laser diodes for application within the AMRDEC HWIL facilities

NASA Astrophysics Data System (ADS)

Saylor, Daniel A.; Bender, Matt; Cantey, Thomas M.; Beasley, D. B.; Buford, Jim A.

2004-08-01

The U.S. Army's Research, Development, and Engineering Command's (RDECOM) Aviation and Missile Research, Development, and Engineering Center (AMRDEC) provides Hardware-in-the-Loop (HWIL) test support to numerous tactical and theatre missile programs. Critical to the successful execution of these tests is the state-of-the-art technologies employed in the visible and infrared scene projector systems. This paper describes the results of characterizations tests performed on new mid-wave infrared (MWIR) quantum well laser diodes recently provided to AMRDEC by the Naval Research Labs and Sarnoff Industries. These lasers provide a +10X imrovement in MWIR output over the previous technology of lead-salt laser diodes. Performance data on output power, linearity, and solid-angle coverage are presented. A discussion of the laser packages is also provided.

Light extraction in planar light-emitting diode with nonuniform current injection: model and simulation.

PubMed

Khmyrova, Irina; Watanabe, Norikazu; Kholopova, Julia; Kovalchuk, Anatoly; Shapoval, Sergei

2014-07-20

We develop an analytical and numerical model for performing simulation of light extraction through the planar output interface of the light-emitting diodes (LEDs) with nonuniform current injection. Spatial nonuniformity of injected current is a peculiar feature of the LEDs in which top metal electrode is patterned as a mesh in order to enhance the output power of light extracted through the top surface. Basic features of the model are the bi-plane computation domain, related to other areas of numerical grid (NG) cells in these two planes, representation of light-generating layer by an ensemble of point light sources, numerical "collection" of light photons from the area limited by acceptance circle and adjustment of NG-cell areas in the computation procedure by the angle-tuned aperture function. The developed model and procedure are used to simulate spatial distributions of the output optical power as well as the total output power at different mesh pitches. The proposed model and simulation strategy can be very efficient in evaluation of the output optical performance of LEDs with periodical or symmetrical configuration of the electrodes.

Mass removal modes in the laser ablation of silicon by a Q-switched diode-pumped solid-state laser (DPSSL)

NASA Astrophysics Data System (ADS)

Lim, Daniel J.; Ki, Hyungson; Mazumder, Jyoti

2006-06-01

A fundamental study on the Q-switched diode-pumped solid-state laser interaction with silicon was performed both experimentally and numerically. Single pulse drilling experiments were conducted on N-type silicon wafers by varying the laser intensity from 108-109 W cm-2 to investigate how the mass removal mechanism changes depending on the laser intensity. Hole width and depth were measured and surface morphology was studied using scanning electron microscopy. For the numerical model study, Ki et al's self-consistent continuous-wave laser drilling model (2001 J. Phys. D: Appl. Phys. 34 364-72) was modified to treat the solidification phenomenon between successive laser pulses. The model has the capabilities of simulating major interaction physics, such as melt flow, heat transfer, evaporation, homogeneous boiling, multiple reflections and surface evolution. This study presents some interesting results on how the mass removal mode changes as the laser intensity increases.

Application of Gauss's law space-charge limited emission model in iterative particle tracking method

NASA Astrophysics Data System (ADS)

Altsybeyev, V. V.; Ponomarev, V. A.

2016-11-01

The particle tracking method with a so-called gun iteration for modeling the space charge is discussed in the following paper. We suggest to apply the emission model based on the Gauss's law for the calculation of the space charge limited current density distribution using considered method. Based on the presented emission model we have developed a numerical algorithm for this calculations. This approach allows us to perform accurate and low time consumpting numerical simulations for different vacuum sources with the curved emitting surfaces and also in the presence of additional physical effects such as bipolar flows and backscattered electrons. The results of the simulations of the cylindrical diode and diode with elliptical emitter with the use of axysimmetric coordinates are presented. The high efficiency and accuracy of the suggested approach are confirmed by the obtained results and comparisons with the analytical solutions.

The Numerical Simulation of the Nanosecond Switching of a p-SOS Diode

NASA Astrophysics Data System (ADS)

Podolska, N. I.; Lyublinskiy, A. G.; Grekhov, I. V.

2017-12-01

Abrupt high-density reverse current interruption has been numerically simulated for switching from forward to reverse bias in a silicon p + P 0 n + structure ( p-SOS diode). It has been shown that the current interruption in this structure occurs as a result of the formation of two dynamic domains of a strong electric field in regions in which the free carrier concentration substantially exceeds the concentration of the doping impurity. The first domain is formed in the n + region at the n + P 0 junction, while the second domain is formed in the P 0 region at the interface with the p + layer. The second domain expands much faster, and this domain mainly determines the current interruption rate. Good agreement is achieved between the simulation results and the experimental data when the actual electric circuit determining the electron-hole plasma pumping in and out is accurately taken into account.

Numerical Study on Recombination Efficiency at 4,4'-Bis(2,2'-diphenylvinyl)-1,1'-spirobiphenyl/Tris(8-quinolinolato)aluminium Interface in Organic Light Emitting Diodes

NASA Astrophysics Data System (ADS)

Hwang, Young Wook; Kim, Kwang Sik; Won, Tae Young

2013-10-01

In this paper, we report our numerical study on the electrical and optical properties of the organic light emitting diodes (OLEDs) devices with n-doped layer, which is inserted for the purpose of reducing the interface barrier height between the cathode and the electron transport layer (ETL). We performed finite element method (FEM) simulation on OLEDs in order to understand the transport behavior of carriers, recombination kinetics, and emission property. Our model includes Poisson's equation, continuity equation to account for behavior of electrons and holes and exciton continuity/transfer equation to account for recombination of carriers. We employ the multilayer structure which consists of indium tin oxide (ITO); 2,2',7,7'-tetrakis(N,N-diphenylamine)-9,9'-spirobi-fluorene (S-TAD); 4,4'-bis(2,2'-diphenylvinyl)-1,1'-spirobiphenyl (S-DPVBi); tris(8-quinolinolato)aluminium (Alq3); calcium (Ca).

The Effects of Diode Laser Therapy as an Adjunct to Scaling and Root Planing in the Treatment of Aggressive Periodontitis: A 1-Year Randomized Controlled Clinical Trial.

PubMed

Matarese, Giovanni; Ramaglia, Luca; Cicciù, Marco; Cordasco, Giancarlo; Isola, Gaetano

2017-12-01

The aim of this study was to investigate and compare the clinical, microbial, and inflammatory effects of a diode laser as an adjunct to scaling and root planing (SRP) versus SRP alone for the treatment of generalized aggressive periodontitis (GAgP). Using a split-mouth design, 31 patients with GAgP were enrolled in the study. The maxillary right and left quadrants were randomly assigned to SRP+diode laser or SRP alone. Patients were examined on a regular basis for clinical, microbiological, and inflammatory mediator changes over a 1-year period. Clinical attachment level (CAL) was the primary outcome variable chosen. In addition, subgingival biofilm samples and gingival crevicular fluid (GCF) inflammatory mediators were analyzed at each follow-up session. Compared to baseline, both treatments demonstrated an improvement in periodontal parameters at 1 year. However, SRP+diode laser produced a significant improvement in probing depth (PD; 2.56 ± 0.44 vs. 3.36 ± 0.51 mm, p < 0.05) and CAL (3.47 ± 0.25 vs. 4.11 ± 0.26 mm, p < 0.05) values compared to SRP alone. Similarly, in the SRP+diode laser group, the bacteria of orange complex group were significantly reduced at 30 and 60 days compared to SRP alone. Moreover, SRP+diode laser determined a reduction in mean GCF level of interleukin (IL)-1β and IL-1β/IL-10 ratio at 15 and 30 days compared to SRP alone (p < 0.05). At 1 year, SRP+diode laser yielded a significant reduction in some clinical parameters, while microbial and inflammatory mediator changes were not significantly reduced compared to SRP alone.

SU-E-T-376: Evaluation of a New Stereotactic Diode for Small Field Dosimetry

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kralik, J; Kosterin, P; Mooij, R

2015-06-15

Purpose: To evaluate the performance of a new stereotactic diode for dosimetry of small photon fields. Methods: A new stereotactic diode, consisting of an unshielded p-type silicon chip, and with improved radiation hardness energy dependence was recently developed (IBA Dosimetry, Schwarzenbruch, Germany). The diode has an active volume of 0.6 mm dia. x 0.02 mm thick. Two new diodes were evaluated, one which was pre-irradiated to 100kGy with 10 MeV electrons and another which received no prior irradiation. Sensitivity, stability, reproducibility, and linearity as a function of dose were assessed. Beam profiles and small field output factors were measured onmore » a CyberKnife (CK) and compared with measurements using two commercially available diodes. Results: The new diodes exhibit linear behavior (within 0.6%) over a dose range 0.02 – 50 Gy; a commercially available device exhibits excursions of up to 4% over the same range. The sensitivity is 4.1 and 3.8 nC/Gy for the un-irradiated and pre-irradiated diodes, respectively. When irradiated with 150 Gy in dose increments of 5, 20 and 35 Gy, both new diodes provide a stable response within 0.5%. Output factors measured with the two new diodes are identical and compare favorably with other commercially available diodes and published data. Similarly, no differences in measured field size or penumbra were observed among the devices tested. Conclusion: The new diodes show excellent stability and sensitivity. The beam characterization in terms of output factors and beam profiles is consistent with that obtained with commercially available diodes.« less

Subpicosecond thin-disk laser oscillator with pulse energies of up to 25.9 microjoules by use of an active multipass geometry.

PubMed

Neuhaus, Joerg; Bauer, Dominik; Zhang, Jing; Killi, Alexander; Kleinbauer, Jochen; Kumkar, Malte; Weiler, Sascha; Guina, Mircea; Sutter, Dirk H; Dekorsy, Thomas

2008-12-08

The pulse shaping dynamics of a diode-pumped laser oscillator with active multipass cell was studied experimentally and numerically. We demonstrate the generation of high energy subpicosecond pulses with a pulse energy of up to 25.9 microJ at a pulse duration of 928 fs directly from a thin-disk laser oscillator. These results are achieved by employing a selfimaging active multipass geometry operated in ambient atmosphere. Stable single pulse operation has been obtained with an average output power in excess of 76 W and at a repetition rate of 2.93 MHz. Self starting passive mode locking was accomplished using a semiconductor saturable absorber mirror. The experimental results are compared with numerical simulations, showing good agreement including the appearance of Kelly sidebands. Furthermore, a modified soliton-area theorem for approximating the pulse duration is presented. (c) 2008 Optical Society of America

The Role of Helium Metastable States in Radio-Frequency Helium-Oxygen Atmospheric Pressure Plasma Jets: Measurement and Numerical Simulation

NASA Astrophysics Data System (ADS)

Niemi, Kari; Waskoenig, Jochen; Sadeghi, Nader; Gans, Timo; O'Connell, Deborah

2011-10-01

Absolute densities of metastable He atoms were measured line-of sight integrated along the plasma channel of a capacitively-coupled radio-frequency driven atmospheric pressure plasma jet operated in helium oxygen mixtures by tunable diode-laser absorption spectroscopy. Dependencies of the He metastable density with oxygen admixtures up to 1 percent were investigated. Results are compared to a 1-d numerical simulation, which includes a semi-kinetical treatment of the electron dynamics and the complex plasma chemistry (20 species, 184 reactions), and very good agreement is found. The main formation mechanisms for the helium metastables are identified and analyzed, including their pronounced spatio-temporal dynamics. Penning ionization through helium metastables is found to be significant for plasma sustainment, while it is revealed that helium metastables are not an important energy carrying species into the jet effluent and therefore will not play a direct role in remote surface treatments.

Comparative evaluation of diode laser ablation and surgical stripping technique for gingival depigmentation: A clinical and immunohistochemical study.

PubMed

Bakutra, Gaurav; Shankarapillai, Rajesh; Mathur, Lalit; Manohar, Balaji

2017-01-01

There are various treatment modalities to remove the black patches of melanin pigmentation. The aim of the study is to clinically compare the diode laser ablation and surgical stripping technique for gingival depigmentation and to evaluate their effect on the histological changes in melanocyte activity. A total of 40 sites of 20 patients with bilateral melanin hyperpigmentation were treated with the surgical stripping and diode laser ablation technique. Change in Hedin index score, change in area of pigmentation using image analyzing software, pain perception, patient preference of treatment were recorded. All 40 sites were selected for immunohistochemical analysis using HMB-45 immunohistochemical marker. At 12 months post-operative visit, in all sites, repigmentation was observed with different grades of Hedin index. Paired t -test, analysis of variance, and Chi-square tests were used for statistical analysis. Repigmentation in surgical stripping is significantly lesser compared to laser ablation. Lesser numbers of melanocytes were found on immunohistological examination at 12 months postoperatively. Comparison for patient preference and pain indices give statistically significant values for diode laser techniques. Gingival hyperpigmentation is effectively managed by diode laser ablation technique and surgical stripping method. In this study, surgical stripping technique found to be better compared to diode laser ablation.

Comparative evaluation of diode laser ablation and surgical stripping technique for gingival depigmentation: A clinical and immunohistochemical study

PubMed Central

Bakutra, Gaurav; Shankarapillai, Rajesh; Mathur, Lalit; Manohar, Balaji

2017-01-01

Introduction: There are various treatment modalities to remove the black patches of melanin pigmentation. The aim of the study is to clinically compare the diode laser ablation and surgical stripping technique for gingival depigmentation and to evaluate their effect on the histological changes in melanocyte activity. Materials and Methods: A total of 40 sites of 20 patients with bilateral melanin hyperpigmentation were treated with the surgical stripping and diode laser ablation technique. Change in Hedin index score, change in area of pigmentation using image analyzing software, pain perception, patient preference of treatment were recorded. All 40 sites were selected for immunohistochemical analysis using HMB-45 immunohistochemical marker. Results: At 12 months post-operative visit, in all sites, repigmentation was observed with different grades of Hedin index. Paired t-test, analysis of variance, and Chi-square tests were used for statistical analysis. Repigmentation in surgical stripping is significantly lesser compared to laser ablation. Lesser numbers of melanocytes were found on immunohistological examination at 12 months postoperatively. Comparison for patient preference and pain indices give statistically significant values for diode laser techniques. Conclusion: Gingival hyperpigmentation is effectively managed by diode laser ablation technique and surgical stripping method. In this study, surgical stripping technique found to be better compared to diode laser ablation. PMID:28539864

Comparing the 810nm diode laser with conventional surgery in orthodontic soft tissue procedures.

PubMed

Ize-Iyamu, I N; Saheeb, B D; Edetanlen, B E

2013-09-01

To compare the use of the 810nm diode laser with conventional surgery in the management of soft tissue mucogingival problems associated with orthodontic treatment. Orthodontic patients requiring different soft tissue surgical procedures were randomly assigned to receive conventional surgery or soft tissue diode laser, (wavelength 810 nm). Parameters documented include the type of anaesthesia used, intra and post operative pain, bleeding, the use of scalpel and sutures. The chi-squared test was used to test for significance at 95% confidence level. Probability values (p-values) less than 0.05 were regarded as significant. Only 2(16.7%) of the procedures carried out with the soft tissue laser required infiltration anaesthesia compared to 10 (90.9%) with conventional surgery and this was significant (P<0.001). Post operative pain was significantly reduced in all cases treated with the diode laser (P<0.001). There was also a significant difference (P<0.05) in post operative bleeding in all cases treated with the diode laser. No sutures were used in all soft tissue cases managed with the diode laser and this was significant (P<0.001). There was no statistically significant difference in treatment time in the use of the laser compared with conventional surgery. Orthodontic patients treated with the diode laser required less infiltration anaesthesia, had reduced bleeding during and after surgery, rapid postoperative haemostasis, elimination of the need for sutures and an improved postoperative comfort and healing.

Effect of uniaxial stress on electroluminescence, valence band modification, optical gain, and polarization modes in tensile strained p-AlGaAs/GaAsP/n-AlGaAs laser diode structures: Numerical calculations and experimental results

NASA Astrophysics Data System (ADS)

Bogdanov, E. V.; Minina, N. Ya.; Tomm, J. W.; Kissel, H.

2012-11-01

The effects of uniaxial compression in [110] direction on energy-band structures, heavy and light hole mixing, optical matrix elements, and gain in laser diodes with "light hole up" configuration of valence band levels in GaAsP quantum wells with different widths and phosphorus contents are numerically calculated. The development of light and heavy hole mixing caused by symmetry lowering and converging behavior of light and heavy hole levels in such quantum wells under uniaxial compression is displayed. The light or heavy hole nature of each level is established for all considered values of uniaxial stress. The results of optical gain calculations for TM and TE polarization modes show that uniaxial compression leads to a significant increase of the TE mode and a minor decrease of the TM mode. Electroluminescence experiments were performed under uniaxial compression up to 5 kbar at 77 K on a model laser diode structure (p-AlxGa1-xAs/GaAs1-yPy/n-AlxGa1-xAs) with y = 0.16 and a quantum well width of 14 nm. They reveal a maximum blue shift of 27 meV of the electroluminescence spectra that is well described by the calculated change of the optical gap and the increase of the intensity being referred to a TE mode enhancement. Numerical calculations and electroluminescence data indicate that uniaxial compression may be used for a moderate wavelength and TM/TE intensity ratio tuning.

A pulsated weak-resonant-cavity laser diode with transient wavelength scanning and tracking for injection-locked RZ transmission.

PubMed

Lin, Gong-Ru; Chi, Yu-Chieh; Liao, Yu-Sheng; Kuo, Hao-Chung; Liao, Zhi-Wang; Wang, Hai-Lin; Lin, Gong-Cheng

2012-06-18

By spectrally slicing a single longitudinal-mode from a master weak-resonant-cavity Fabry-Perot laser diode with transient wavelength scanning and tracking functions, the broadened self-injection-locking of a slave weak-resonant-cavity Fabry-Perot laser diode is demonstrated to achieve bi-directional transmission in a 200-GHz array-waveguide-grating channelized dense-wavelength-division-multiplexing passive optical network system. Both the down- and up-stream slave weak-resonant-cavity Fabry-Perot laser diodes are non-return-to-zero modulated below threshold and coherently injection-locked to deliver the pulsed carrier for 25-km bi-directional 2.5 Gbits/s return-to-zero transmission. The master weak-resonant-cavity Fabry-Perot laser diode is gain-switched at near threshold condition and delivers an optical coherent pulse-train with its mode linewidth broadened from 0.2 to 0.8 nm by transient wavelength scanning, which facilitates the broadband injection-locking of the slave weak-resonant-cavity Fabry-Perot laser diodes with a threshold current reducing by 10 mA. Such a transient wavelength scanning induced spectral broadening greatly releases the limitation on wavelength injection-locking range required for the slave weak-resonant-cavity Fabry-Perot laser diode. The theoretical modeling and numerical simulation on the wavelength scanning and tracking effects of the master and slave weak-resonant-cavity Fabry-Perot laser diodes are performed. The receiving power sensitivity for back-to-back transmission at bit-error-rate <10(-10) is -25.6 dBm, and the power penalty added after 25-km transmission is less than 2 dB for all 16 channels.

Stacked Device of Polymer Light-Emitting Diode Driven by Metal-Base Organic Transistor

NASA Astrophysics Data System (ADS)

Yoneda, Kazuhiro; Nakayama, Ken-ichi; Yokoyama, Masaaki

2008-02-01

We fabricated a new light-emitting device that combined a polymer light-emitting diode (PLED) and a vertical-type metal-base organic transistor (MBOT) through a floating electrode. By employing a layered floating electrode of Mg:Ag/Au, the MBOT on the PLED was operated successfully and a current amplification factor of approximately 20 was observed. The PLED luminescence exceeding 100 cd/m2 can be modulated using the MBOT with a low base voltage (2.8 V) and VCC (8 V). The emission contrast (on/off ratio) was improved with insertion of an insulating layer under the base, and the cut-off frequency was estimated to be 8 kHz. This device is expected to be a promising driving system of organic light-emitting diode (OLED), realizing low voltage and high numerical aperture.

Flexible deep-ultraviolet light-emitting diodes for significant improvement of quantum efficiencies by external bending

NASA Astrophysics Data System (ADS)

Shervin, Shahab; Oh, Seung Kyu; Park, Hyun Jung; Lee, Keon-Hwa; Asadirad, Mojtaba; Kim, Seung-Hwan; Kim, Jeomoh; Pouladi, Sara; Lee, Sung-Nam; Li, Xiaohang; Kwak, Joon Seop; Ryou, Jae-Hyun

2018-03-01

We report a new route to improve quantum efficiencies of AlGaN-based deep-ultraviolet light-emitting diodes (DUV LEDs) using mechanical flexibility of recently developed bendable thin-film structures. Numerical studies show that electronic band structures of AlGaN heterostructures and resulting optical and electrical characteristics of the devices can be significantly modified by external bending through active control of piezoelectric polarization. Internal quantum efficiency is enhanced higher than three times, when the DUV LEDs are moderately bent with concave curvatures. Furthermore, an efficiency droop at high injection currents is mitigated and turn-on voltage of diodes decreases with the same bending condition. The concept of bendable DUV LEDs with a controlled external strain can provide a new path for high-output-power and high-efficiency devices.

Schlieren with a laser diode source

NASA Technical Reports Server (NTRS)

Burner, A. W.; Franke, J. M.

1981-01-01

The use of a laser diode as a light source for a schlieren system designed to study phase objects such as a wind-tunnel flow is explored. A laser diode schlieren photograph and a white light schlieren photograph (zirconium arc source) are presented for comparison. The laser diode has increased sensitivity, compared with light schlieren, without appreciable image degradiation, and is an acceptable source for schlieren flow visualization.

Photovoltaic module bypass diode encapsulation

NASA Technical Reports Server (NTRS)

Shepard, N. J., Jr.

1983-01-01

The design and processing techniques necessary to incorporate bypass diodes within the module encapsulant are presented. The Semicon PN junction diode cells were selected. Diode junction to heat spreader thermal resistance measurements, performed on a variety of mounted diode chip types and sizes, have yielded values which are consistently below 1 deg C per watt, but show some instability when thermally cycled over the temperature range from -40 to 150 deg C. Three representative experimental modules, each incorporating integral bypass diode/heat spreader assemblies of various sizes, were designed. Thermal testing of these modules enabled the formulation of a recommended heat spreader plate sizing relationship. The production cost of three encapsulated bypass diode/heat spreader assemblies were compared with similarly rated externally mounted packaged diodes. It is concluded that, when proper designed and installed, these bypass diode devices will improve the overall reliability of a terrestrial array over a 20 year design lifetime.

Continued improvement in reduced-mode (REM) diodes enable 272 W from 105 μm 0.15 NA beam

NASA Astrophysics Data System (ADS)

Kanskar, M.; Bao, L.; Chen, Z.; Dawson, D.; DeVito, M.; Dong, W.; Grimshaw, M.; Guan, X.; Hemenway, M.; Martinsen, R.; Urbanek, W.; Zhang, S.

2017-02-01

High-power, high-brightness diode lasers from 8xx nm to 9xx nm have been pursued in many applications including fiber laser pumping, materials processing, solid-state laser pumping, and consumer electronics manufacturing. In particular, 915 nm - 976 nm diodes are of interest as diode pumps for the kilowatt CW fiber lasers. Thus, there have been many technical efforts on driving the diode lasers to have both high power and high brightness to achieve high-performance and reduced manufacturing costs. This paper presents our continued progress in the development of high brightness fiber-coupled product platform, elementTM. In the past decade, the amount of power coupled into a single 105 μm and 0.15 NA fiber has increased by over a factor of ten through improved diode laser brilliance and the development of techniques for efficiently coupling multiple emitters into a single fiber. In this paper, we demonstrate the further brightness improvement and power-scaling enabled by both the rise in chip brightness/power and the increase in number of chips coupled into a given numerical aperture. We report a new x-REM design with brightness as high as 4.3 W/mm-mrad at a BPP of 3 mm-mrad. We also report the record 272W from a 2×9 elementTM with 105 μm/0.15 NA beam using x-REM diodes and a new product introduction at 200W output power from 105 μm/0.15 NA beam at 915 nm.

Comparative Study of Diode Laser Versus Neodymium-Yttrium Aluminum: Garnet Laser Versus Intense Pulsed Light for the Treatment of Hirsutism.

PubMed

Puri, Neerja

2015-01-01

Lasers are widely used for the treatment of hirsutism. But the choice of the right laser for the right skin type is very important. Before starting with laser therapy, it is important to assess the skin type, the fluence, the pulse duration and the type of laser to be used. To compare the efficacy and side effects of Diode laser, Neodymium-yttrium aluminum - garnet (Nd: YAG) laser and intense pulsed light (IPL) on 30 female patients of hirsutism. Thirty female patients with hirsutism were selected for a randomised controlled study. The patients were divided into three groups of 10 patients each. In group I patients diode laser was used, in group II patients long pulsed Nd: YAG laser was used and in group III, IPL was used. The patients were evaluated and result graded according to a 4-point scale as excellent, >75% reduction; good, 50-75% reduction; fair; 25-50% reduction; and poor, <25% reduction in hair density. It was seen that the percentage of hair reduction after two sessions of treatment was maximum (40%) in the diode laser group, followed by 35% hair reduction in the Nd: Yag laser group and 10% hair reduction in the IPL group. The percentage of hair reduction after four sessions of treatment was maximum (64%) in the diode laser group, followed by 62% hair reduction in the Nd: Yag laser group and 48% hair reduction in the IPL group. The percentage of hair reduction after eight sessions of treatment was maximum (92%) in the diode laser group, followed by 90% hair reduction in the Nd: YAG group and 70% hair reduction in the IPL group. To conclude for the Indian skin with dark hairs, the diode laser still stands the test of time. But, since the diode laser has a narrow margin of safety, proper pre and post-procedure cooling is recommended. Although, the side effects of Nd: YAG laser are less as compared to the diode laser, it is less efficacious as compared to the diode laser.

Comparative Study of Diode Laser Versus Neodymium-Yttrium Aluminum: Garnet Laser Versus Intense Pulsed Light for the Treatment of Hirsutism

PubMed Central

Puri, Neerja

2015-01-01

Introduction: Lasers are widely used for the treatment of hirsutism. But the choice of the right laser for the right skin type is very important. Before starting with laser therapy, it is important to assess the skin type, the fluence, the pulse duration and the type of laser to be used. Aims: To compare the efficacy and side effects of Diode laser, Neodymium-yttrium aluminum — garnet (Nd: YAG) laser and intense pulsed light (IPL) on 30 female patients of hirsutism. Materials and Methods: Thirty female patients with hirsutism were selected for a randomised controlled study. The patients were divided into three groups of 10 patients each. In group I patients diode laser was used, in group II patients long pulsed Nd: YAG laser was used and in group III, IPL was used. The patients were evaluated and result graded according to a 4-point scale as excellent, >75% reduction; good, 50-75% reduction; fair; 25-50% reduction; and poor, <25% reduction in hair density. Results: It was seen that the percentage of hair reduction after two sessions of treatment was maximum (40%) in the diode laser group, followed by 35% hair reduction in the Nd: Yag laser group and 10% hair reduction in the IPL group. The percentage of hair reduction after four sessions of treatment was maximum (64%) in the diode laser group, followed by 62% hair reduction in the Nd: Yag laser group and 48% hair reduction in the IPL group. The percentage of hair reduction after eight sessions of treatment was maximum (92%) in the diode laser group, followed by 90% hair reduction in the Nd: YAG group and 70% hair reduction in the IPL group. Conclusions: To conclude for the Indian skin with dark hairs, the diode laser still stands the test of time. But, since the diode laser has a narrow margin of safety, proper pre and post-procedure cooling is recommended. Although, the side effects of Nd: YAG laser are less as compared to the diode laser, it is less efficacious as compared to the diode laser. PMID:26157309

Near-field phase-change recording using a GaN laser diode

NASA Astrophysics Data System (ADS)

Kishima, Koichiro; Ichimura, Isao; Yamamoto, Kenji; Osato, Kiyoshi; Kuroda, Yuji; Iida, Atsushi; Saito, Kimihiro

2000-09-01

We developed a 1.5-Numerical-Aperture optical setup using a GaN blue-violet laser diode. We used a 1.0 mm-diameter super-hemispherical solid immersion lens, and optimized a phase-change disk structure including the cover layer by the method of MTF simulation. The disk surface was polished by tape burnishing technique. An eye-pattern of (1-7)-coded data at the linear density of 80 nm/bit was demonstrated on the phase-change disk below a 50 nm gap height, which was realized through our air-gap servo mechanism.

Microchip solid-state cylindrical vector lasers with orthogonally polarized dual laser-diode end pumping.

PubMed

Otsuka, Kenju; Chu, Shu-Chun

2013-05-01

We report a simple method for generating cylindrical vector beams directly from laser-diode (LD)-pumped microchip solid-state lasers by using dual end-pumping beams. Radially as well as azimuthally polarized vector field emissions have been generated from the common c-cut Nd:GdVO4 laser cavity merely by controlling the focus positions of orthogonally polarized LD off-axis pump beams. Hyperbolically polarized vector fields have also been observed, in which the cylindrical symmetry of vector fields is broken. Experimental results have been well reproduced by numerical simulations.

Analysis and design of fiber-coupled high-power laser diode array

NASA Astrophysics Data System (ADS)

Zhou, Chongxi; Liu, Yinhui; Xie, Weimin; Du, Chunlei

2003-11-01

A conclusion that a single conventional optical system could not realize fiber coupled high-power laser diode array is drawn based on the BPP of laser beam. According to the parameters of coupled fiber, a method to couple LDA beams into a single multi-mode fiber including beams collimating, shaping, focusing and coupling is present. The divergence angles after collimating are calculated and analyzed; the shape equation of the collimating micro-lenses array is deprived. The focusing lens is designed. A fiber coupled LDA result with the core diameter of 800 um and numeric aperture of 0.37 is gotten.

Spectral perturbations from silicon diode detector encapsulation and shielding in photon fields.

PubMed

Eklund, Karin; Ahnesjö, Anders

2010-11-01

Silicon diodes are widely used as detectors for relative dose measurements in radiotherapy. The common manufacturing practice is to encapsulate the diodes in plastic for protection and to facilitate mounting in scanning devices. Diodes intended for use in photon fields commonly also have a shield of a high atomic number material (usually tungsten) integrated into the encapsulation to selectively absorb low-energy photons to which silicon diodes would otherwise over-response. However, new response models based on cavity theories and spectra calculations have been proposed for direct correction of the readout from unshielded (e.g., "electron") diodes used in photon fields. This raises the question whether it is correct to assume that the spectrum in a water phantom at the location of the detector cavity is not perturbed by the detector encapsulation materials. The aim of this work is to investigate the spectral effects of typical encapsulations, including shielding, used for clinical diodes. The effects of detector encapsulation of an unshielded and a shielded commercial diode on the spectra at the detector cavity location are studied through Monte Carlo simulations with PENELOPE-2005. Variance reduction based on correlated sampling is applied to reduce the CPU time needed for the simulations. The use of correlated sampling is found to be efficient and to not introduce any significant bias to the results. Compared to reference spectra calculated in water, the encapsulation for an unshielded diode is demonstrated to not perturb the spectrum, while a tungsten shielded diode caused not only the desired decrease in low-energy scattered photons but also a large increase of the primary electron fluence. Measurements with a shielded diode in a 6 MV photon beam proved that the shielding does not completely remove the field-size dependence of the detector response caused by the over-response from low-energy photons. Response factors of a properly corrected unshielded diode were shown to give comparable, or better, results than the traditionally used shielded diode. Spectra calculated for photon fields in water can be directly used for modeling the response of unshielded silicon diodes with plastic encapsulations. Unshielded diodes used together with appropriate corrections can replace shielded diodes in photon dose measurements.

[Laservaporization of the prostate: current status of the greenlight and diode laser].

PubMed

Rieken, M; Bachmann, A; Gratzke, C

2013-03-01

In the last decade laser vaporization of the prostate has emerged as a safe and effective alternative to transurethral resection of the prostate (TURP). This was facilitated in particular by the introduction of photoselective vaporization of the prostate (PVP) with a 532 nm 80 W KTP laser in 2002. Prospective randomized trials comparing PVP and TURP with a maximum follow-up of 3 years mostly demonstrated comparable functional results. Cohort studies showed a safe application of PVP in patients under oral anticoagulation and with large prostates. Systems from various manufacturers with different maximum power output and wavelengths are now available for diode laser vaporization of the prostate. Prospective randomized trials comparing diode lasers and TURP are not yet available. In cohort studies and comparative studies PVP diode lasers are characterized by excellent hemostatic properties but functional results vary greatly with some studies reporting high reoperation rates.

Comparative evaluation of photoablative efficacy of erbium: yttrium-aluminium-garnet and diode laser for the treatment of gingival hyperpigmentation. A randomized split-mouth clinical trial.

PubMed

Giannelli, Marco; Formigli, Lucia; Bani, Daniele

2014-04-01

The use of lasers in periodontology is a matter of debate, mainly because of the lack of consensual therapeutic protocols. In this randomized, split-mouth trial, the clinical efficacy of two different photoablative dental lasers, erbium:yttrium-aluminum-garnet (Er:YAG) and diode, for the treatment of gingival hyperpigmentation is compared. Twenty-one patients requiring treatment for mild-to-severe gingival hyperpigmentation were enrolled. Maxillary or mandibular left or right quadrants were randomly subjected to photoablative deepithelialization with either Er:YAG or diode laser. Masked clinical assessments of each laser quadrant were made at admission and days 7, 30, and 180 postoperatively by an independent observer. Histologic examination was performed before and soon after treatment and 6 months after irradiation. Patients also compiled a subjective evaluation questionnaire. Both diode and Er:YAG lasers gave excellent results in gingival hyperpigmentation. However, Er:YAG laser induced deeper gingival tissue injury than diode laser, as judged by bleeding at surgery, delayed healing, and histopathologic analysis. The use of diode laser showed additional advantages compared to Er:YAG in terms of less postoperative discomfort and pain. This study highlights the efficacy of diode laser for photoablative deepithelialization of hyperpigmented gingiva. It is suggested that this laser can represent an effective and safe therapeutic option for gingival photoablation.

Greatly improved 3C-SiC p-n junction diodes grown by chemical vapor deposition

NASA Technical Reports Server (NTRS)

Neudeck, Philip G.; Larkin, David J.; Starr, Jonathan E.; Powell, J. A.; Salupo, Carl S.; Matus, Lawrence G.

1993-01-01

This paper reports the fabrication and initial electrical characterization of greatly improved 3C-SiC (beta-SiC) p-n junction diodes. These diodes, which were grown on commercially available 6H-SiC substrates by chemical vapor deposition, demonstrate rectification to -200 V at room temperature, representing a fourfold improvement in reported 3C-SiC diode blocking voltage. The reverse leakage currents and saturation current densities measured on these diodes also show significant improvement compared to previously reported 3C-SiC p-n junction diodes. When placed under sufficient forward bias, the diodes emit significantly bright green-yellow light. These results should lead to substantial advancements in 3C-SiC transistor performance.

Modeling and characterization of field-enhanced corona discharge in ozone-generator diode

NASA Astrophysics Data System (ADS)

Patil, Jagadish G.; Vijayan, T.

2010-02-01

Electric field enhanced corona plasma discharge in ozone generator diode of axial symmetry has been investigated and characterized in theory. The cathode K of diode is made of a large number of sharpened nozzles arranged on various radial planes on the axial mast and pervaded in oxygen gas inside the anode cup A, produces high fields over MV/m and aids in the formation of a corona plume of dense ozone cloud over the cathode surface. An r-z finite difference scheme has been devised and employed to numerically determine the potential and electric field distributions inside the diode. The analyses of cathode emissions revealed a field emission domain conformed to modified Child-Langmuir diode-current. Passage of higher currents (over μA) in shorter A-K gaps d gave rise to cathode heated plasma extending from the corona to Saha regimes depending on local temperature. Plasma densities of order 102-106 m-3 are predicted in these. For larger d however, currents are smaller and heating negligible and a negative corona favoring ozone formation is attained. High ozone yields about 20 per cent of oxygen input is predicted in this domain. The generator so developed will be applied to various important applications such as, purification of ambient air /drinking water, ozone therapy, and so on.

Modeling the effect of heatsink performance in high-peak-power laser-diode-bar pump sources for solid-state lasers 011 011

DOE Office of Scientific and Technical Information (OSTI.GOV)

Honea, E.C., LLNL

We derive approximate expressions for transient output power and wavelength chirp of high- peak-power laser-diode bars assuming one-dimensional heat flow and linear temperature dependences for chirp and efficiency. The model is derived for pulse durations, 10 < {tau} < 1000 ps, typically used for diode-pumped solid-state lasers and is in good agreement with experimental data for Si heatsink mounted 940 nm laser-diode bars operating at 100 W/cm. The analytic expressions are more flexible and easily used than the results of operating point dependent numerical modeling. In addition, the analytic expressions used here can be integrated to describe the energy permore » unit wavelength for a given pulse duration, initial emission bandwidth and heatsink material. We find that the figure-of-merit for a heatsink material in this application is ({rho}C{sub p}K) where {rho}C{sub p} is the volumetric heat capacity and K is the thermal conductivity. As an example of the utility of the derived expressions, we determine an effective absorption coefficient as a function of pump pulse duration for a diode-pumped solid-state laser utilizing Yb:Sr{sub 5}(PO{sub 4}){sub 3}F (Yb:S-FAP) as the gain medium.« less

Side-pumping combiner for high-power fiber laser based on tandem pumping

NASA Astrophysics Data System (ADS)

Gu, Yanran; Lei, Chengmin; Liu, Jun; Li, Ruixian; Liu, Le; Xiao, Hu; Chen, Zilun

2017-11-01

We investigate a (2+1)×1 side-pumping combiner numerically and experimentally for high-power fiber laser based on tandem pumping for the first time. The influence of taper ratio and launch mode on the 1018-nm pump coupling efficiency and the leakage power into the coating of the signal fiber (LPC) is analyzed numerically. A side-pumping combiner is developed successfully by tapered-fused splicing technique based on the numerical analysis, consisting of two pump fibers (220/242 μm, NA=0.22) and a signal fiber (40/400 μm, NA=0.06/0.46). The total 1018-nm pump efficiency of the combiner is 98.1%, and the signal light insertion loss is <3%. The results show that, compared with laser diodes pumping, the combiner appears to have a better LPC performance and power handling capability when using 1018-nm fiber as the pump light. Meanwhile, an all-fiber MOPA laser based on tandem pumping with 1080-nm output of 2533 W and the slope efficiency of 82.8% is achieved based on the home-made combiner.

Holographic injection locking of a broad area laser diode via a photorefractive thin-film device.

PubMed

van Voorst, P D; de Wit, M R; Offerhaus, H L; Tay, S; Thomas, J; Peyghambarian, N; Boller, K-J

2007-12-24

We demonstrate locking of a high power broad area laser diode to a single frequency using holographic feedback from a photorefractive polymer thin-film device for the first time. A four-wave mixing setup is used to generate feedback for the broad area diode at the wavelength of the single frequency source (Ti:Sapphire laser) while the spatial distribution adapts to the preferred profile of the broad area diode. The result is an injection-locked broad area diode emitting with a linewidth comparable to the Ti:Sapphire laser.

Investigation of silicide-induced-dopant-activation for steep tunnel junction in tunnel field effect transistor (TFET)

NASA Astrophysics Data System (ADS)

Kim, Sihyun; Kwon, Dae Woong; Park, Euyhwan; Lee, Junil; Lee, Roongbin; Lee, Jong-Ho; Park, Byung-Gook

2018-02-01

Numerous researches for making steep tunnel junction within tunnel field-effect transistor (TFET) have been conducted. One of the ways to make an abrupt junction is source/drain silicidation, which uses the phenomenon often called silicide-induced-dopant-segregation. It is revealed that the silicide process not only helps dopants to pile up adjacent to the metal-silicon alloy, also induces the dopant activation, thereby making it possible to avoid additional high temperature process. In this report, the availability of dopant activation induced by metal silicide process was thoroughly investigated by diode measurement and device simulation. Metal-silicon (MS) diodes having p+ and n+ silicon formed on the p- substrate exhibit the characteristics of ohmic and pn diodes respectively, for both the samples with and without high temperature annealing. The device simulation for TFETs with dopant-segregated source was also conducted, which verified enhanced DC performance.

Nanoparticle embedded p-type electrodes for GaN-based flip-chip light emitting diodes.

PubMed

Kwak, Joon Seop; Song, J O; Seong, T Y; Kim, B I; Cho, J; Sone, C; Park, Y

2006-11-01

We have investigated high-quality ohmic contacts for flip-chip light emitting diodes using Zn-Ni nanoparticles/Ag schemes. The Zn-Ni nanoparticles/Ag contacts produce specific contact resistances of 10(-5)-10(-6) omegacm2 when annealed at temperatures of 330-530 degrees C for 1 min in air ambient, which are much better than those obtained from the Ag contacts. It is shown that blue InGaN/GaN multi-quantum well light emitting diodes fabricated with the annealed Zn-Ni nanoparticles/Ag contacts give much lower forward-bias voltages at 20 mA compared with those of the multi-quantum well light emitting diodes made with the as-deposited Ag contacts. It is further presented that the multi-quantum well light emitting diodes made with the Zn-Ni nanoparticles/Ag contacts show similar output power compared to those fabricated with the Ag contact layers.

A comparative evaluation: Oral leukoplakia surgical management using diode laser, CO2 laser, and cryosurgery.

PubMed

Natekar, Madhukar; Raghuveer, Hosahallli-Puttaiah; Rayapati, Dilip-Kumar; Shobha, Eshwara-Singh; Prashanth, Nagesh-Tavane; Rangan, Vinod; Panicker, Archana G

2017-06-01

The comparatively evaluate the three surgical treatment modalities namely cryosurgery, diode and CO2 laser surgery in terms of healing outcomes on the day of surgery, first and second week post operatively and recurrence at the end of 18 months was assessed. Thirty selected patients were divided randomly into three groups. Each group comprising of ten patients were subjected to one of the three modalities of treatment namely cryosurgery, diode laser or CO2 laser surgery for ablation of OL. Obtained data was analyzed using mainly using Chi-square and Anova tests. Study showed statistical significant differences (p > 0.05) for evaluation parameters like pain, edema and scar. The parameters like infection, recurrence, bleeding showed no statistical significance. Pain was significantly higher in CO2 laser surgery group as compared with diode laser group. There was no recurrence observed at the end of the 6 months follow up period in all the three study groups. Observations from the study highlights that all three surgical modalities used in this study were effective for treatment of OL, and the overall summation of the results of the study showed that laser therapy (CO2 and Diode) seems to offer better clinically significant results than cryotherapy. Key words: Oral premalignant lesion, leukoplakia, cryosurgery, CO2 laser surgery, diode laser surgery.

Investigation on emission characteristics of metal-ceramic cathode applied to industrial X-ray diode.

PubMed

Xun, Ma; Jianqiang, Yuan; Hongwei, Liu; Hongtao, Li; Lingyun, Wang; Ping, Jiang

2016-06-01

The industrial x-ray diode with high impedance configuration is usually adopted to generate repetitive x-ray, but its performance would be worsened due to lower electric field on the cathode of diode when a voltage of several hundreds of kV is applied. To improve its performance, a novel metal-ceramic cathode is proposed in this paper. Key factors (width, relative permittivity of ceramic, and so on) affecting electric field distribution on triple points are analyzed by electrostatic field calculation program, so as to optimize the design of this novel cathode. Experiments are done to study the characteristics including emission current of cathode, diode voltage duration, diode mean dynamic impedance, and diode impedance drop velocity within diode power duration. The results show that metal-ceramic cathode could improve diode performance by enhancing emission current and stabling impedance; the impedance drop velocity of diode with spoke-shaped metal-ceramic cathode was reduced to -5 Ω ns(-1) within diode power duration, comparing to -15 Ω ns(-1) with metal foil cathode.

Calibration and Data Retrieval Algorithms for the NASA Langley/Ames Diode Laser Hygrometer for the NASA Trace-P Mission

NASA Technical Reports Server (NTRS)

Podolske, James R.; Sachse, Glen W.; Diskin, Glenn S.; Hipskino, R. Stephen (Technical Monitor)

2002-01-01

This paper describes the procedures and algorithms for the laboratory calibration and the field data retrieval of the NASA Langley / Ames Diode Laser Hygrometer as implemented during the NASA Trace-P mission during February to April 2000. The calibration is based on a NIST traceable dewpoint hygrometer using relatively high humidity and short pathlength. Two water lines of widely different strengths are used to increase the dynamic range of the instrument in the course of a flight. The laboratory results are incorporated into a numerical model of the second harmonic spectrum for each of the two spectral window regions using spectroscopic parameters from the HITRAN database and other sources, allowing water vapor retrieval at upper tropospheric and lower stratospheric temperatures and humidity levels. The data retrieval algorithm is simple, numerically stable, and accurate. A comparison with other water vapor instruments on board the NASA DC-8 and ER-2 aircraft is presented.

Numerical study on electronic and optical properties of organic light emitting diodes.

PubMed

Kim, Kwangsik; Hwang, Youngwook; Won, Taeyoung

2013-08-01

In this paper, we present a finite element method (FEM) study of space charge effects in organic light emitting diodes. Our model includes a Gaussian density of states to account for the energetic disorder in organic semiconductors and the Fermi-Dirac statistics to account for the charge hopping process between uncorrelated sites. The physical model cover all the key physical processes in OLEDs, namely charge injection, transport and recombination, exciton diffusion, transfer and decay as well as light coupling, and thin-film-optics. The exciton model includes generation, diffusion, and energy transfer as well as annihilation. We assumed that the light emission originates from oscillating and thus embodied as excitons and embedded in a stack of multilayer. The out-coupled emission spectrum has been numerically calculated as a function of viewing angle, polarization, and dipole orientation. We discuss the accumulation of charges at internal interfaces and their signature in the transient response as well as the electric field distribution.

Resonant tunneling assisted propagation and amplification of plasmons in high electron mobility transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bhardwaj, Shubhendu; Sensale-Rodriguez, Berardi; Xing, Huili Grace

A rigorous theoretical and computational model is developed for the plasma-wave propagation in high electron mobility transistor structures with electron injection from a resonant tunneling diode at the gate. We discuss the conditions in which low-loss and sustainable plasmon modes can be supported in such structures. The developed analytical model is used to derive the dispersion relation for these plasmon-modes. A non-linear full-wave-hydrodynamic numerical solver is also developed using a finite difference time domain algorithm. The developed analytical solutions are validated via the numerical solution. We also verify previous observations that were based on a simplified transmission line model. Itmore » is shown that at high levels of negative differential conductance, plasmon amplification is indeed possible. The proposed rigorous models can enable accurate design and optimization of practical resonant tunnel diode-based plasma-wave devices for terahertz sources, mixers, and detectors, by allowing a precise representation of their coupling when integrated with other electromagnetic structures.« less

Robotic radiosurgery system patient-specific QA for extracranial treatments using the planar ion chamber array and the cylindrical diode array.

PubMed

Lin, Mu-Han; Veltchev, Iavor; Koren, Sion; Ma, Charlie; Li, Jinsgeng

2015-07-08

Robotic radiosurgery system has been increasingly employed for extracranial treatments. This work is aimed to study the feasibility of a cylindrical diode array and a planar ion chamber array for patient-specific QA with this robotic radiosurgery system and compare their performance. Fiducial markers were implanted in both systems to enable image-based setup. An in-house program was developed to postprocess the movie file of the measurements and apply the beam-by-beam angular corrections for both systems. The impact of noncoplanar delivery was then assessed by evaluating the angles created by the incident beams with respect to the two detector arrangements and cross-comparing the planned dose distribution to the measured ones with/without the angular corrections. The sensitivity of detecting the translational (1-3 mm) and the rotational (1°-3°) delivery errors were also evaluated for both systems. Six extracranial patient plans (PTV 7-137 cm³) were measured with these two systems and compared with the calculated doses. The plan dose distributions were calculated with ray-tracing and the Monte Carlo (MC) method, respectively. With 0.8 by 0.8 mm² diodes, the output factors measured with the cylindrical diode array agree better with the commissioning data. The maximum angular correction for a given beam is 8.2% for the planar ion chamber array and 2.4% for the cylindrical diode array. The two systems demonstrate a comparable sensitivity of detecting the translational targeting errors, while the cylindrical diode array is more sensitive to the rotational targeting error. The MC method is necessary for dose calculations in the cylindrical diode array phantom because the ray-tracing algorithm fails to handle the high-Z diodes and the acrylic phantom. For all the patient plans, the cylindrical diode array/ planar ion chamber array demonstrate 100% / > 92% (3%/3 mm) and > 96% / ~ 80% (2%/2 mm) passing rates. The feasibility of using both systems for robotic radiosurgery system patient-specific QA has been demonstrated. For gamma evaluation, 2%/2 mm criteria for cylindrical diode array and 3%/3 mm criteria for planar ion chamber array are suggested. The customized angular correction is necessary as proven by the improved passing rate, especially with the planar ion chamber array system.

Inferior turbinate reduction: Diode laser or conventional partial turbinectomy?

PubMed

Doreyawar, Venkatesh; Gadag, Raveendra P; Manjunath, Dandi Narasaiah; Javali, Shivalingappa B; Maradi, Nagaraj; Shetty, Deekshit

2018-01-01

Hypertrophy of the inferior nasal turbinate is one of the most common causes of nasal obstruction. The diode laser has proven to be as effective as other lasers for this indication. Our objective was to study various outcomes associated with the use of the diode laser, such as improvements in nasal obstruction and postoperative pain, reduction in intraoperative bleeding, and rapidity of healing. A nonrandomized, controlled trial was conducted in which outcomes were compared between diode laser turbinate reduction (LTR) and conventional partial inferior turbinectomy (PIT) in 60 patients, 30 who underwent LTR and 30 who underwent PIT. The improvement in nasal obstruction was measured postoperatively up to 6 months. Intraoperative bleeding was measured and postoperative pain scores were assessed each day up to the fifth postoperative day. Rapidity of healing was evaluated until 6 months postoperatively. Subjective relief of nasal obstruction occurred in 90.8% of the LTR group and 65% of the PIT group at 6 months (p < 0.05). Pain scores were significantly higher until 5 days postoperatively in the PIT group compared with the LTR group (p = 0.0001). Intraoperative bleeding mean scores (ml) were 8.03 in the LTR group and 23.29 in the PIT group (p = 0.00001). Healing was faster in the LTR group at a mean of 3.03 weeks compared with 6.33 weeks in the PIT group (p = 0.00001). Outcomes with the diode laser were better and diode LTR caused less morbidity compared with the conventional technique.

Efficient Ho:LuLiF4 laser diode-pumped at 1.15 μm.

PubMed

Wang, Sheng-Li; Huang, Chong-Yuan; Zhao, Cheng-Chun; Li, Hong-Qiang; Tang, Yu-Long; Yang, Nan; Zhang, Shuai-Yi; Hang, Yin; Xu, Jian-Qiu

2013-07-15

We report the first laser operation based on Ho(3+)-doped LuLiF(4) single crystal, which is directly pumped with 1.15-μm laser diode (LD). Based on the numerical model, it is found that the "two-for-one" effect induced by the cross-relaxation plays an important role for the laser efficiency. The maximum continuous wave (CW) output power of 1.4 W is produced with a beam propagation factor of M(2) ~2 at the lasing wavelength of 2.066 μm. The slope efficiency of 29% with respect to absorbed power is obtained.

The Multidisk Diode-Pumped High Power Yb:YAG Laser Amplifier of High-Intensity Laser System with 1 kHz Repetition Rate

NASA Astrophysics Data System (ADS)

Kuptsov, G. V.; Petrov, V. V.; Petrov, V. A.; Laptev, A. V.; Kirpichnikov, A. V.; Pestryakov, E. V.

2018-04-01

The source of instabilities in the multidisk diode-pumped high power Yb:YAG laser amplifier with cryogenic closed-loop cooling in the laser amplification channel of the high-intensity laser system with 1 kHz repetition rate was determined. Dissected copper mounts were designed and used to suppress instabilities and to achieve repeatability of the system. The equilibrium temperature dependency of the active elements on average power was measured. The seed laser for the multidisk amplifier was numerically simulated and designed to allow one to increase pulses output energy after the amplifier up to 500 mJ.

Effects of laser-assisted lipolysis on nipple-areola complex.

PubMed

Sönmez Ergün, Selma; Kayan, Reşit Burak; Güleş, Mustafa Ekrem; Kuzu, İsmail Melih

2017-08-01

Gynecomastia, as a most common benign condition, represents itself as the enlargement of the male breast and also nipple-areola complex as the severity of the condition increases. With this study, we aimed to clarify the effects of 980-nm diode laser on nipple-areola complex (NAC). Although numerous open techniques have been described to correct gynecomastia, nowadays trends have shifted to minimally invasive techniques such as laser-assisted lipolysis (LAL). A total of 25 patients with bilateral gynecomastia treated with LAL by using a 980-nm diode laser. The resultant contour and reduced size of the complex were satisfactory. LAL leads to significant reduction of the size of NAC.

Analytical model for thermal lensing and spherical aberration in diode side-pumped Nd:YAG laser rod having Gaussian pump profile

NASA Astrophysics Data System (ADS)

M, H. Moghtader Dindarlu; M Kavosh, Tehrani; H, Saghafifar; A, Maleki

2015-12-01

In this paper, according to the temperature and strain distribution obtained by considering the Gaussian pump profile and dependence of physical properties on temperature, we derive an analytical model for refractive index variations of the diode side-pumped Nd:YAG laser rod. Then we evaluate this model by numerical solution and our maximum relative errors are 5% and 10% for variations caused by thermo-optical and thermo-mechanical effects; respectively. Finally, we present an analytical model for calculating the focal length of the thermal lens and spherical aberration. This model is evaluated by experimental results.

Computational diffraction tomographic microscopy with transport of intensity equation using a light-emitting diode array

NASA Astrophysics Data System (ADS)

Li, Jiaji; Chen, Qian; Zhang, Jialin; Zuo, Chao

2017-10-01

Optical diffraction tomography (ODT) is an effective label-free technique for quantitatively refractive index imaging, which enables long-term monitoring of the internal three-dimensional (3D) structures and molecular composition of biological cells with minimal perturbation. However, existing optical tomographic methods generally rely on interferometric configuration for phase measurement and sophisticated mechanical systems for sample rotation or beam scanning. Thereby, the measurement is suspect to phase error coming from the coherent speckle, environmental vibrations, and mechanical error during data acquisition process. To overcome these limitations, we present a new ODT technique based on non-interferometric phase retrieval and programmable illumination emitting from a light-emitting diode (LED) array. The experimental system is built based on a traditional bright field microscope, with the light source replaced by a programmable LED array, which provides angle-variable quasi-monochromatic illumination with an angular coverage of +/-37 degrees in both x and y directions (corresponding to an illumination numerical aperture of ˜ 0.6). Transport of intensity equation (TIE) is utilized to recover the phase at different illumination angles, and the refractive index distribution is reconstructed based on the ODT framework under first Rytov approximation. The missing-cone problem in ODT is addressed by using the iterative non-negative constraint algorithm, and the misalignment of the LED array is further numerically corrected to improve the accuracy of refractive index quantification. Experiments on polystyrene beads and thick biological specimens show that the proposed approach allows accurate refractive index reconstruction while greatly reduced the system complexity and environmental sensitivity compared to conventional interferometric ODT approaches.

Optical diffraction tomography microscopy with transport of intensity equation using a light-emitting diode array

NASA Astrophysics Data System (ADS)

Li, Jiaji; Chen, Qian; Zhang, Jialin; Zhang, Zhao; Zhang, Yan; Zuo, Chao

2017-08-01

Optical diffraction tomography (ODT) is an effective label-free technique for quantitatively refractive index imaging, which enables long-term monitoring of the internal three-dimensional (3D) structures and molecular composition of biological cells with minimal perturbation. However, existing optical tomographic methods generally rely on interferometric configuration for phase measurement and sophisticated mechanical systems for sample rotation or beam scanning. Thereby, the measurement is suspect to phase error coming from the coherent speckle, environmental vibrations, and mechanical error during data acquisition process. To overcome these limitations, we present a new ODT technique based on non-interferometric phase retrieval and programmable illumination emitting from a light-emitting diode (LED) array. The experimental system is built based on a traditional bright field microscope, with the light source replaced by a programmable LED array, which provides angle-variable quasi-monochromatic illumination with an angular coverage of ±37 degrees in both x and y directions (corresponding to an illumination numerical aperture of ∼0.6). Transport of intensity equation (TIE) is utilized to recover the phase at different illumination angles, and the refractive index distribution is reconstructed based on the ODT framework under first Rytov approximation. The missing-cone problem in ODT is addressed by using the iterative non-negative constraint algorithm, and the misalignment of the LED array is further numerically corrected to improve the accuracy of refractive index quantification. Experiments on polystyrene beads and thick biological specimens show that the proposed approach allows accurate refractive index reconstruction while greatly reduced the system complexity and environmental sensitivity compared to conventional interferometric ODT approaches.

Light-Output Enhancement of GaN-Based Light-Emitting Diodes with Three-Dimensional Backside Reflectors Patterned by Microscale Cone Array

PubMed Central

Hu, Jinyong; Wang, Hong

2014-01-01

Three-dimensional (3D) backside reflector, compared with flat reflectors, can improve the probability of finding the escape cone for reflecting lights and thus enhance the light-extraction efficiency (LEE) for GaN-based light-emitting diode (LED) chips. A triangle-lattice of microscale SiO2 cone array followed by a 16-pair Ti3O5/SiO2 distributed Bragg reflector (16-DBR) was proposed to be attached on the backside of sapphire substrate, and the light-output enhancement was demonstrated by numerical simulation and experiments. The LED chips with flat reflectors or 3D reflectors were simulated using Monte Carlo ray tracing method. It is shown that the LEE increases as the reflectivity of backside reflector increases, and the light-output can be significantly improved by 3D reflectors compared to flat counterparts. It can also be observed that the LEE decreases as the refractive index of the cone material increases. The 3D 16-DBR patterned by microscale SiO2 cone array benefits large enhancement of LEE. This microscale pattern was prepared by standard photolithography and wet-etching technique. Measurement results show that the 3D 16-DBR can provide 12.1% enhancement of wall-plug efficiency, which is consistent with the simulated value of 11.73% for the enhancement of LEE. PMID:25133262

[Characterization of a diode system for in vivo dosimetry with electron beams].

PubMed

Ragona, R; Rossetti, V; Lucio, F; Anglesio, S; Giglioli, F R

2001-10-01

Current quality assurance regulation stresses the basic role of in vivo dosimetry. Our study evaluates the usefulness and reliability of semiconductor diodes in determining the electron absorbed dose. P-type EDE semiconductor detectors were irradiated with electron beams of different energies produced by a CGR Saturn Therac 20. The diode and ionization chamber response were compared, and effect of energy value, collimator opening, source skin distance and gantry angle on diode response was studied. Measurements show a maximum increment of about 20% in diode response increasing the beam energy (6-20 MeV). The response also increases with: collimator opening, reaching 5% with field sizes larger than 10x10 cm2 (with the exception of 20 MeV energy); SSD increase (with a maximum of 8% for 20 MeV); transversal gantry incidence, compared with the diode longitudinal axis; it does not affect the response in the interval of +/- 45 degrees. Absorbed dose attenuation at dmax, due to the presence of diode on the axis of the beam as a function of electron energy was also determined : the maximum attenuation value is 15% in 6 MeV electron beams. A dose calculation algorithm, taking into account diode response dependence was outlined. In vivo dosimetry was performed in 92 fields for 80 patients, with an agreement of +/-4 % (1 SD) between prescribed and measured dose. It is possible to use the EDE semiconductor detectors on a quality control program of dose delivery for electron beam therapy, but particular attention should be paid to the beam incidence angle and diode dose attenuation.

Progress on single barrier varactors for submillimeter wave power generation

NASA Technical Reports Server (NTRS)

Nilsen, Svein M.; Groenqvist, Hans; Hjelmgren, Hans; Rydberg, Anders; Kollberg, Erik L.

1992-01-01

Theoretical work on Single Barrier Varactor (SBV) diodes, indicate that the efficiency for a multiplier has a maximum for a considerably smaller capacitance variation than previously thought. The theoretical calculations are performed, both with a simple theoretical model and a complete computer simulation using the method of harmonic balance. Modeling of the SBV is carried out in two steps. First, the semiconductor transport equations are solved simultaneously using a finite difference scheme in one dimension. Secondly, the calculated I-V, and C-V characteristics are input to a multiplier simulator which calculates the optimum impedances, and output powers at the frequencies of interest. Multiple barrier varactors can also be modeled in this way. Several examples on how to design the semiconductor layers to obtain certain characteristics are given. The calculated conversion efficiencies of the modeled structures, in a multiplier circuit, are also presented. Computer simulations for a case study of a 750 GHz multiplier show that InAs diodes perform favorably compared to GaAs diodes. InAs and InGaAs SBV diodes have been fabricated and their current vs. voltage characteristics are presented. In the InAs diode, was the large bandgap semiconductor AlSb used as barrier. The InGaAs diode was grown lattice matched to an InP substrate with InAlAs as a barrier material. The current density is greatly reduced for these two material combinations, compared to that of GaAs/AlGaAs SBV diodes. GaAs based diodes can be biased to higher voltages than InAs diodes.

Silicon diodes as an alternative to diamond detectors for depth dose curves and profile measurements of photon and electron radiation.

PubMed

Scherf, Christian; Peter, Christiane; Moog, Jussi; Licher, Jörg; Kara, Eugen; Zink, Klemens; Rödel, Claus; Ramm, Ulla

2009-08-01

Depth dose curves and lateral dose profiles should correspond to relative dose to water in any measured point, what can be more or less satisfied with different detectors. Diamond as detector material has similar dosimetric properties like water. Silicon diodes and ionization chambers are also commonly used to acquire dose profiles. The authors compared dose profiles measured in an MP3 water phantom with a diamond detector 60003, unshielded and shielded silicon diodes 60008 and 60012 and a 0.125-cm(3) thimble chamber 233642 (PTW, Freiburg, Germany) for 6- and 25-MV photons. Electron beams of 6, 12 and 18 MeV were investigated with the diamond detector, the unshielded diode and a Markus chamber 23343. The unshielded diode revealed relative dose differences at the water surface below +10% for 6-MV and +4% for 25-MV photons compared to the diamond data. These values decreased to less than 1% within the first millimeters of water depth. The shielded diode was only required to obtain correct data of the fall-off zones for photon beams larger than 10 x 10 cm(2) because of important contributions of low-energy scattered photons. For electron radiation the largest relative dose difference of -2% was observed with the unshielded silicon diode for 6 MeV within the build-up zone. Spatial resolutions were always best with the small voluminous silicon diodes. Relative dose profiles obtained with the two silicon diodes have the same degree of accuracy as with the diamond detector.

A WENO-solver combined with adaptive momentum discretization for the Wigner transport equation and its application to resonant tunneling diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dorda, Antonius, E-mail: dorda@tugraz.at; Schürrer, Ferdinand, E-mail: ferdinand.schuerrer@tugraz.at

2015-03-01

We present a novel numerical scheme for the deterministic solution of the Wigner transport equation, especially suited to deal with situations in which strong quantum effects are present. The unique feature of the algorithm is the expansion of the Wigner function in local basis functions, similar to finite element or finite volume methods. This procedure yields a discretization of the pseudo-differential operator that conserves the particle density on arbitrarily chosen grids. The high flexibility in refining the grid spacing together with the weighted essentially non-oscillatory (WENO) scheme for the advection term allows for an accurate and well-resolved simulation of themore » phase space dynamics. A resonant tunneling diode is considered as test case and a detailed convergence study is given by comparing the results to a non-equilibrium Green's functions calculation. The impact of the considered domain size and of the grid spacing is analyzed. The obtained convergence of the results towards a quasi-exact agreement of the steady state Wigner and Green's functions computations demonstrates the accuracy of the scheme, as well as the high flexibility to adjust to different physical situations.« less

Numerical Analysis of the Temperature Impact on Performance of GaN-Based 460-nm Light-Emitting Diode.

PubMed

Tawfik, Wael Z; Lee, June Key

2018-03-01

The influence of temperature on the characteristics of a GaN-based 460-nm light-emitting diode (LED) prepared on sapphire substrate was simulated using the SiLENSe and SpeCLED software programs. High temperatures impose negative effects on the performance of GaN-based LEDs. As the temperature increases, electrons acquire higher thermal energies, and therefore LEDs may suffer more from high-current loss mechanisms, which in turn causes a reduction in the radiative recombination rate in the active region. The internal quantum efficiency was reduced by about 24% at a current density of 35 A/cm2, and the electroluminescence spectral peak wavelength was redshifted. The LED operated at 260 K and exhibited its highest light output power of ~317.5 mW at a maximum injection current of 350 mA, compared to 212.2 mW for an LED operated at 400 K. However, increasing temperature does not cause a droop in efficiency under high injection conditions. The peak efficiency at 1 mA of injection current decreases more rapidly by ~15% with increasing temperature from 260 to 400 K than the efficiency at high injection current of 350 mA by ~11%.

A WENO-solver combined with adaptive momentum discretization for the Wigner transport equation and its application to resonant tunneling diodes

PubMed Central

Dorda, Antonius; Schürrer, Ferdinand

2015-01-01

We present a novel numerical scheme for the deterministic solution of the Wigner transport equation, especially suited to deal with situations in which strong quantum effects are present. The unique feature of the algorithm is the expansion of the Wigner function in local basis functions, similar to finite element or finite volume methods. This procedure yields a discretization of the pseudo-differential operator that conserves the particle density on arbitrarily chosen grids. The high flexibility in refining the grid spacing together with the weighted essentially non-oscillatory (WENO) scheme for the advection term allows for an accurate and well-resolved simulation of the phase space dynamics. A resonant tunneling diode is considered as test case and a detailed convergence study is given by comparing the results to a non-equilibrium Green's functions calculation. The impact of the considered domain size and of the grid spacing is analyzed. The obtained convergence of the results towards a quasi-exact agreement of the steady state Wigner and Green's functions computations demonstrates the accuracy of the scheme, as well as the high flexibility to adjust to different physical situations. PMID:25892748

Advances in 750 nm VECSELs (Conference Presentation)

NASA Astrophysics Data System (ADS)

Saarinen, Esa J.; Ranta, Sanna; Lyytikäinen, Jari; Saarela, Antti; Sirbu, Alexei; Iakovlev, Vladimir; Kapon, Eli; Guina, Mircea

2017-03-01

Lasers operating in the transmission window of tissue at wavelengths between 700 and 800 nm are needed in numerous medical and biomedical applications, including photodynamic therapy and fluorescence microscopy. However, the performance of diode lasers in this spectral range is limited by the lack of appropriate compound semiconductors. Here, we review our recent research on 750 nm VECSELs. Two approaches to reaching the 750 nm wavelength will be discussed. The first approach relies on intra-cavity frequency doubling a wafer-fused 1500 nm VECSEL. The VECSEL gain chip comprises a GaAs-based DBR and an InP-based gain section, which allows for optical pumping with low-cost commercial diodes at 980 nm. With this scheme we have achieved watt-level output powers and tuning of the laser wavelength over a 40 nm band at around 750 nm. The second approach is direct emission at 750 nm using the AlGaAs/GaAs material system. In this approach visible wavelengths are required for optical pumping. However, the consequent higher costs compared to pumping at 980 nm are mitigated by the more compact laser setup and prospects of doubling the frequency to the ultraviolet range.

A WENO-solver combined with adaptive momentum discretization for the Wigner transport equation and its application to resonant tunneling diodes.

PubMed

Dorda, Antonius; Schürrer, Ferdinand

2015-03-01

We present a novel numerical scheme for the deterministic solution of the Wigner transport equation, especially suited to deal with situations in which strong quantum effects are present. The unique feature of the algorithm is the expansion of the Wigner function in local basis functions, similar to finite element or finite volume methods. This procedure yields a discretization of the pseudo-differential operator that conserves the particle density on arbitrarily chosen grids. The high flexibility in refining the grid spacing together with the weighted essentially non-oscillatory (WENO) scheme for the advection term allows for an accurate and well-resolved simulation of the phase space dynamics. A resonant tunneling diode is considered as test case and a detailed convergence study is given by comparing the results to a non-equilibrium Green's functions calculation. The impact of the considered domain size and of the grid spacing is analyzed. The obtained convergence of the results towards a quasi-exact agreement of the steady state Wigner and Green's functions computations demonstrates the accuracy of the scheme, as well as the high flexibility to adjust to different physical situations.

Integrated digital metamaterials enables ultra-compact optical diodes

DOE PAGES

Shen, Bing; Polson, Randy; Menon, Rajesh

2015-01-01

We applied nonlinear optimization to design integrated digital metamaterials in silicon for unidirectional energy flow. Two devices, one for each polarization state, were designed, fabricated, and characterized. Both devices offer comparable or higher transmission efficiencies and extinction ratios, are easier to fabricate, exhibit larger bandwidths and are more tolerant to fabrication errors, when compared to alternatives. Furthermore, each device footprint is only 3μm × 3μm, which is the smallest optical diode ever reported. To illustrate the versatility of digital metamaterials, we also designed a polarization-independent optical diode.

Effects of Parasitic Reactance on Lattice Circuit Slotline Switch

NASA Technical Reports Server (NTRS)

Ponchak, George E.

2016-01-01

A slotline lattice switch has recently been proposed and demonstrated. In that paper, ideal diode characteristics were assumed. In this paper, the effects of parasitic reactances, due to the diode and the wire bonds that connect it to the circuit, are investigated. The switch is compared to a traditional slotline switch with a single diode across the slot.

High-efficiency, low-temperature cesium diodes with lanthanum-hexaboride electrodes

NASA Technical Reports Server (NTRS)

Morris, J. F.

1974-01-01

Lanthanum hexaboride electrodes in 1700 K cesium diodes may triple power outputs compared with those demonstrated for nuclear thermionic space applications. Still greater relative gains seem possible for emitters below 1700 K. Further improvements in cesium diode performance should result from the lower collector temperatures allowed for earth and low power space duties. Decreased temperatures will lessen thermal transport losses that attend thermionic conversion mechanisms. Such advantages will add to those from collector Carnot and electrode effects. If plasma ignition difficulties impede diode temperature reductions, recycling small fractions of the output power could provide ionization. So high efficiency, low temperature cesium diodes with lanthanum hexaboride electrodes appear feasible.

New laser materials for laser diode pumping

NASA Technical Reports Server (NTRS)

Jenssen, H. P.

1990-01-01

The potential advantages of laser diode pumped solid state lasers are many with high overall efficiency being the most important. In order to realize these advantages, the solid state laser material needs to be optimized for diode laser pumping and for the particular application. In the case of the Nd laser, materials with a longer upper level radiative lifetime are desirable. This is because the laser diode is fundamentally a cw source, and to obtain high energy storage, a long integration time is necessary. Fluoride crystals are investigated as host materials for the Nd laser and also for IR laser transitions in other rare earths, such as the 2 micron Ho laser and the 3 micron Er laser. The approach is to investigate both known crystals, such as BaY2F8, as well as new crystals such as NaYF8. Emphasis is on the growth and spectroscopy of BaY2F8. These two efforts are parallel efforts. The growth effort is aimed at establishing conditions for obtaining large, high quality boules for laser samples. This requires numerous experimental growth runs; however, from these runs, samples suitable for spectroscopy become available.

A practical optical-resolution photoacoustic microscopy prototype using a 300 mW visible laser diode

NASA Astrophysics Data System (ADS)

Zeng, Lvming; Piao, Zhonglie; Huang, Shenghai; Jia, Wangcun; Chen, Zhongping

2016-03-01

Optical-resolution photoacoustic microscopy (OR-PAM) is an emerging technique for microvasculature imaging at high spatial resolution and contrast. In this work, we present a practical visible laser-diode-based OR-PAM (LD-OR-PAM) prototype for vasculature imaging, which has the desirable properties of being portable, low-cost, and label-free. The prototype employs a 300 mW pulsed laser diode in a 3.8 mm diameter package, emitting 174 ns pulses at 405 +/- 5 nm wavelength and a pulse energy of 52 nJ. An aspheric objective with a numerical aperture of 0.60 is used to achieve microscope optical illumination. The laser diode excitation has a compact size of 4.5 × 1.8 × 1.8 cm3 assembled with a cooling block. The lateral resolution was tested to be 0.95 μm on ~7 μm carbon fibers. The subcutaneous microvasculature on a mouse back was label-free imaged ex vivo, which demonstrates the potential of the LD-OR-PAM prototype for in vivo imaging skin chromosphores such as hemoglobin. Our ultimate aim is to provide a practical and affordable OR-PAM system as a routine instrument for standard clinical applications.

Characterisation of temperature dependent parameters of multi-quantum well (MQW) Ti/Au/n-AlGaAs/n-GaAs/n-AlGaAs Schottky diodes

NASA Astrophysics Data System (ADS)

Filali, Walid; Sengouga, Nouredine; Oussalah, Slimane; Mari, Riaz H.; Jameel, Dler; Al Saqri, Noor Alhuda; Aziz, Mohsin; Taylor, David; Henini, Mohamed

2017-11-01

Forward and reverse current-voltage (Isbnd V) of Ti/Au/n-Al0.33Ga0.67As/n-GaAs/n-Al0.33Ga0.67As multi-quantum well (MQW) Schottky diodes were measured over a range of temperatures from 20 to 400 K by a step of 20 K. The Schottky diodes parameters were then extracted from these characteristics. The Cheung method is used for this purpose, assuming a thermionic conduction mechanism. The extracted ideality factor decrease with increasing temperatures. But their values at low temperatures were found to be unrealistic. In order to explain this uncertainty, three assumptions were explored. Firstly an assumed inhomogeneous barrier height gave better parameters especially the Richardson constant but the ideality factor is still unrealistic at low temperatures. Secondly, by using numerical simulation, it was demonstrated that defects including interface states are not responsible for the apparent unrealistic Schottky diode parameters. The third assumption is the tunnelling mechanism through the barrier in the low temperature range. At these lower temperatures, the tunnelling mechanism was more suitable to explain the extracted parameters values.

A comparison of temperature profile depending on skin types for laser hair removal therapy.

PubMed

Kim, Tae-Hoon; Lee, Gwi-Won; Youn, Jong-In

2014-11-01

Although numerous lasers with different wavelengths are available for laser hair removal, their use in individuals with dark-pigmented skin remains a challenge. The present study aims to develop a numerical heat diffusion model considering skin types over various wavelengths. This numerical mode uses Pennes approximation to represent heat from metabolism, blood perfusion and an external heating source. The heat diffusion model is experimentally validated by using agar-based skin tissue phantoms. Diode lasers with four different wavelengths were used with two antithetical skin models. The pulse width and beam spot size were set to 200 ms and 1 cm(2), respectively. Temperature distribution along the hair structure and skin tissue was examined to determine both thermal confinement and heat transfer to the hair follicle. Experimental results are well matched with the numerical results. The results show that for the light skin model, thermal confinement is well achieved over various wavelengths, and treatment efficacy is expected to be better at a shorter wavelength. Otherwise, for the dark skin model, thermal confinement is poorly achieved as the wavelength decreases (<808 nm) and the temperature gap between the hair tip and the hair root is significantly large compared with the light skin model, which may lead to adverse effects. We believe that the developed numerical model will help to establish optimal laser parameters for different individuals during laser hair removal.

Numerical simulation of optical and electronic properties for multilayer organic light-emitting diodes and its application in engineering education

NASA Astrophysics Data System (ADS)

Chang, Shu-Hsuan; Chang, Yung-Cheng; Yang, Cheng-Hong; Chen, Jun-Rong; Kuo, Yen-Kuang

2006-02-01

Organic light-emitting diodes (OLEDs) have been extensively developed in the past few years. The OLED displays have advantages over other displays, such as CRT, LCD, and PDP in thickness, weight, brightness, response time, viewing angle, contrast, driving power, flexibility, and capability of self-emission. In this work, the optical and electronic properties of multilayer OLED devices are numerically studied with an APSYS (Advanced Physical Model of Semiconductor Devices) simulation program. Specifically, the emission and absorption spectra of the Alq 3, DCM, PBD, and SA light-emitting layers, and energy band diagrams, electron-hole recombination rates, and current-voltage characteristics of the simulated OLED devices, typically with a multilayer structure of metal/Alq 3/EML/TPD/ITO constructed by Lim et al., are investigated and compared to the experimental results. The physical models utilized in this work are similar to those presented by Ruhstaller et al. and Hoffmann et al. The simulated results indicate that the emission spectra of the Alq 3, DCM, PBD, and SA light-emitting layers obtained in this study are in good agreement with those obtained experimentally by Zugang et al. Optimization of the optical and electronic performance of the multilayer OLED devices are attempted. In order to further promote the research results, the whole numerical simulation process for optimizing the design of OLED devices has been applied to a project-based course of OLED device design to enhance the students' skills in photonics device design at the Graduate Institute of Photonics of National Changhua University of Education in Taiwan. In the meantime, the effectiveness of the course has been proved by various assessments. The application of the results is a useful point of reference for the research on photonics device design and engineering education. Therefore, it proffers a synthetic effect between innovation and practical application.

Comparative study of the bactericidal effects of indocyanine green- and methyl aminolevulinate-based photodynamic therapy on Propionibacterium acnes as a new treatment for acne.

PubMed

Choi, Seung-Hwan; Seo, Jeong-Wan; Kim, Ki-Ho

2018-05-03

Acne vulgaris is one of the most common dermatological problems, and its therapeutic options include topical and systemic retinoids and antibiotics. However, increase in problems associated with acne treatment, such as side-effects from conventional agents and bacterial resistance to antibiotics, has led to greater use of photodynamic therapy. The purpose of this study was to compare the bactericidal effects of indocyanine green- and methyl aminolevulinate-based photodynamic therapy on Propionibacterium acnes. P. acnes were cultured under anaerobic conditions; then they were divided into three groups (control, treated with indocyanine green and treated with methyl aminolevulinate) and illuminated with different lights (630-nm light-emitting diode, 805-nm diode laser and 830-nm light-emitting diode). The bactericidal effects were evaluated by comparing each group's colony-forming units. The cultured P. acnes were killed with an 805-nm diode laser and 830-nm light-emitting diode in the indocyanine green group. No bactericidal effects of methyl aminolevulinate-based photodynamic therapy were identified. The clinical efficacy of indocyanine green-based photodynamic therapy in 21 patients was retrospectively analyzed. The Korean Acne Grading System was used to evaluate treatment efficacy, which was significantly decreased after treatment. The difference in the efficacy of the 805-nm diode laser and 830-nm light-emitting diode was not statistically significant. Although the methyl aminolevulinate-based photodynamic therapy showed no bactericidal effect, the indocyanine green-based photodynamic therapy has bactericidal effect and clinical efficacy. © 2018 Japanese Dermatological Association.

GreenLight HPS laser 120-W versus diode laser 200-W vaporization of the prostate: comparative clinical experience.

PubMed

Chiang, Po Hui; Chen, Chien Hsu; Kang, Chih Hsiung; Chuang, Yao Chi

2010-09-01

We present our clinical experiences of two recently introduced vaporization laser systems: the GreenLight High Performance System (HPS) laser (532 nm, 120 W) and the Diolas LFD diode laser (980 nm, 200 W). Two laser systems were evaluated to compare their clinical results for the treatment of benign prostatic hyperplasia (BPH). Patients were treated using either the GreenLight HPS laser (n = 84) or the diode laser (n = 55) in a prospective randomized study. The data of International Prostate Symptom Score (IPSS), maximum flow rate (Q(max)), post-void residual urine (PVR), and quality of life score (Qols) were recorded at baseline, 1-, 6-, and 12-month follow-ups. The prostate volume and prostate-specific antigen (PSA) level were assessed at baseline and 6-month follow-up. All complications were also recorded. There was a statistically significant difference in IPSS, Q(max), PVR, and QoLs in each laser group at the 1-, 6-, and 12-month follow-ups compared with baseline. There was no statistical significant difference in any of these parameters at any follow-up interval between each group. The diode laser demonstrates superior hemostatic properties compared with the GreenLight HPS laser. Postoperative incontinence and postoperative irritative symptoms are more pronounced (P < 0.05) after diode laser prostatectomy. Higher incidence of dysuria with sloughing tissues and epididymitis (P < 0.05) is noted after diode laser prostatectomy. Other complications were comparable for both procedures. Although both lasers can improve subjective and objective parameters of BPH, both can produce undesired effects. The search for the ideal vaporization laser to treat BPH still continues. 2010 Wiley-Liss, Inc.

Asymmetric anode and cathode extraction structure fast recovery diode

NASA Astrophysics Data System (ADS)

Xie, Jiaqiang; Ma, Li; Gao, Yong

2018-05-01

This paper presents an asymmetric anode structure and cathode extraction fast and soft recovery diode. The device anode is partial-heavily doped and partial-lightly doped. The P+ region is introduced into the cathode. Firstly, the characteristics of the diode are simulated and analyzed. Secondly, the diode was fabricated and its characteristics were tested. The experimental results are in good agreement with the simulation results. The results show that, compared with the P–i–N diode, although the forward conduction characteristic of the diode is declined, the reverse recovery peak current is reduced by 47%, the reverse recovery time is shortened by 20% and the softness factor is doubled. In addition, the breakdown voltage is increased by 10%. Project supported by the National Natural Science Foundation of China (No. 51177133).

Comparison of high speed DI-LIGBT structures

NASA Astrophysics Data System (ADS)

Sunkavalli, Ravishankar; Baliga, B. Jayant

1997-12-01

The performance of the DI segmented collector (SC)-LIGBT is compared to the collector shorted (CS)-LIGBT. The SC-LIGBT allows for adjusting the tradeoff between switching speed and on-state voltage drop by simply changing the P+ collector segment width during device layout. In contrast to previously reported junction isolated (JI) devices, the DI SC-LIGBT was observed to have a turnoff speed similar to the CS-LIGBT with a higher forward drop than the conventional LIGBT. The on-state performance of the integral diodes of the SC-LIGBTs was found to be superior to the integral diode of the CS-LIGBT. The integral diodes of both the CS and the SC-LIGBTs were found to have much superior switching characteristics compared to a lateral PiN diode at the expense of a higher on-state voltage drop. Thus, the superior switching characteristics of the integral diode in the SC-LIGBT complements its fast switching behavior making this device attractive for compact, high frequency, high efficient, power ICs.

Comparison of the ablation ability of nucleus pulposus after 1,064 nm Nd:YAG laser and 980 nm diode laser radiation.

PubMed

Yin, Jian; Han, Zhengfeng; Guo, Baofeng; Guo, Han; Zhang, Tongtong; Zeng, Yanjun; Ren, Longxi

2015-07-01

To compare the ablation ability of nucleus pulposus after 1,064 nm Nd:YAG laser and 980 nm diode laser radiation. Goat spine specimen (GSS) was radiated using Nd:YAG laser and 980 nm diode laser and then divided into five groups based on the final energy--200, 400, 600, 800 and 1,000 J groups. The ablation quality of nucleus pulposus after radiation was recorded. The ablation quality of GSS was greater at higher radiation energies in both lasers. When compared at the same energy level, the ablation quality of GSS was greater in 980 nm diode laser than in 1,064 nm Nd:YAG laser. Statistical significance was observed in 200 and 400 J groups (P < 0.05) and in 600, 800 and 1,000 J groups (P < 0.01). Radiation with 980 nm diode laser showed better ablation ability than 1,064 nm Nd:YAG laser.

CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES: A super junction SiGe low-loss fast switching power diode

NASA Astrophysics Data System (ADS)

Ma, Li; Gao, Yong

2009-01-01

This paper proposes a novel super junction (SJ) SiGe switching power diode which has a columnar structure of alternating p- and n- doped pillar substituting conventional n- base region and has far thinner strained SiGe p+ layer to overcome the drawbacks of existing Si switching power diode. The SJ SiGe diode can achieve low specific on-resistance, high breakdown voltages and fast switching speed. The results indicate that the forward voltage drop of SJ SiGe diode is much lower than that of conventional Si power diode when the operating current densities do not exceed 1000 A/cm2, which is very good for getting lower operating loss. The forward voltage drop of the Si diode is 0.66 V whereas that of the SJ SiGe diode is only 0.52 V at operating current density of 10 A/cm2. The breakdown voltages are 203 V for the former and 235 V for the latter. Compared with the conventional Si power diode, the reverse recovery time of SJ SiGe diode with 20 per cent Ge content is shortened by above a half and the peak reverse current is reduced by over 15%. The SJ SiGe diode can remarkably improve the characteristics of power diode by combining the merits of both SJ structure and SiGe material.

Performance and Transient Behavior of Vertically Integrated Thin-film Silicon Sensors

PubMed Central

Wyrsch, Nicolas; Choong, Gregory; Miazza, Clément; Ballif, Christophe

2008-01-01

Vertical integration of amorphous hydrogenated silicon diodes on CMOS readout chips offers several advantages compared to standard CMOS imagers in terms of sensitivity, dynamic range and dark current while at the same time introducing some undesired transient effects leading to image lag. Performance of such sensors is here reported and their transient behaviour is analysed and compared to the one of corresponding amorphous silicon test diodes deposited on glass. The measurements are further compared to simulations for a deeper investigation. The long time constant observed in dark or photocurrent decay is found to be rather independent of the density of defects present in the intrinsic layer of the amorphous silicon diode. PMID:27873778

Comparison of the Antibacterial Effect of 810 nm Diode Laser and Photodynamic Therapy in Reducing the Microbial Flora of Root Canal in Endodontic Retreatment in Patients With Periradicular Lesions.

PubMed

Asnaashari, Mohammad; Godiny, Mostafa; Azari-Marhabi, Saranaz; Tabatabaei, Fahimeh Sadat; Barati, Maryam

2016-01-01

The aim of this study was to compare the antibacterial efficacy of diode laser 810nm and photodynamic therapy (PDT) in reducing bacterial microflora in endodontic retreatment of teeth with periradicular lesion. In this in vivo clinical trial, 20 patients who needed endodontic retreatment were selected. After conventional chemo mechanical preparation of root canals, microbiological samples were taken with sterile paper point (PP), held in thioglycollate broth, and then were transferred to the microbiological lab. In the first group, PDT with methylene blue (MB) and diode laser (810 nm, 0.2 W, 40 seconds) was performed and in the second group diode laser (810 nm, 1.2 W, 30 seconds) was irradiated. Then second samples were taken from all canals. CFU/ml amounts showed statistically significant reduction in both groups (P < 0.001). CFU/ml amounts were compared between the two groups and there was no statistical difference. PDT and diode laser 810 nm irradiation are effective methods for root canal disinfection. PDT is a suitable alternative for diode laser 810 nm irradiation, because of lower thermal risk on root dentin.

Vertical GaN merged PiN Schottky diode with a breakdown voltage of 2 kV

NASA Astrophysics Data System (ADS)

Hayashida, Tetsuro; Nanjo, Takuma; Furukawa, Akihiko; Yamamuka, Mikio

2017-06-01

In this study, we successfully fabricated vertical GaN merged PiN Schottky (MPS) diodes and comparatively investigated the cyclic p-GaN width (W p) dependence of their electrical characteristics, including turn-on voltage and reverse leakage current. The MPS diodes with W p of more than 6 µm can turn on at around 3 V. Increasing W p can suppress the reverse leakage current. Moreover, the vertical GaN MPS diode with the breakdown voltage of 2 kV was realized for the first time.

Roles of V-shaped pits on the improvement of quantum efficiency in InGaN/GaN multiple quantum well light-emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Quan, Zhijue, E-mail: quanzhijue@ncu.edu.cn; Wang, Li, E-mail: wl@ncu.edu.cn; Zheng, Changda

2014-11-14

The roles of V-shaped pits on the improvement of quantum efficiency in InGaN/GaN multiple quantum well (MQW) light-emitting diodes are investigated by numerical simulation. The simulation results show that V-shaped pits cannot only screen dislocations, but also play an important role on promoting hole injection into the MQWs. It is revealed that the injection of holes into the MQW via the sidewalls of the V-shaped pits is easier than via the flat region, due to the lower polarization charge densities in the sidewall structure with lower In concentration and (10–11)-oriented semi-polar facets.

Stochastic approach and fluctuation theorem for charge transport in diodes

NASA Astrophysics Data System (ADS)

Gu, Jiayin; Gaspard, Pierre

2018-05-01

A stochastic approach for charge transport in diodes is developed in consistency with the laws of electricity, thermodynamics, and microreversibility. In this approach, the electron and hole densities are ruled by diffusion-reaction stochastic partial differential equations and the electric field generated by the charges is determined with the Poisson equation. These equations are discretized in space for the numerical simulations of the mean density profiles, the mean electric potential, and the current-voltage characteristics. Moreover, the full counting statistics of the carrier current and the measured total current including the contribution of the displacement current are investigated. On the basis of local detailed balance, the fluctuation theorem is shown to hold for both currents.

Semipolar III-nitride laser diodes with zinc oxide cladding.

PubMed

Myzaferi, Anisa; Reading, Arthur H; Farrell, Robert M; Cohen, Daniel A; Nakamura, Shuji; DenBaars, Steven P

2017-07-24

Incorporating transparent conducting oxide (TCO) top cladding layers into III-nitride laser diodes (LDs) improves device design by reducing the growth time and temperature of the p-type layers. We investigate using ZnO instead of ITO as the top cladding TCO of a semipolar (202¯1) III-nitride LD. Numerical modeling indicates that replacing ITO with ZnO reduces the internal loss in a TCO clad LD due to the lower optical absorption in ZnO. Lasing was achieved at 453 nm with a threshold current density of 8.6 kA/cm 2 and a threshold voltage of 10.3 V in a semipolar (202¯1) III-nitride LD with ZnO top cladding.

High-yield transfer printing of metal-insulator-metal nanodiodes.

PubMed

Bareiss, Mario; Ante, Frederik; Kälblein, Daniel; Jegert, Gunther; Jirauschek, Christian; Scarpa, Giuseppe; Fabel, Bernhard; Nelson, Edward M; Timp, Gregory; Zschieschang, Ute; Klauk, Hagen; Porod, Wolfgang; Lugli, Paolo

2012-03-27

Nanoscale metal-insulator-metal (MIM) diodes represent important devices in the fields of electronic circuits, detectors, communication, and energy, as their cutoff frequencies may extend into the "gap" between the electronic microwave range and the optical long-wave infrared regime. In this paper, we present a nanotransfer printing method, which allows the efficient and simultaneous fabrication of large-scale arrays of MIM nanodiode stacks, thus offering the possibility of low-cost mass production. In previous work, we have demonstrated the successful transfer and electrical characterization of macroscopic structures. Here, we demonstrate for the first time the fabrication of several millions of nanoscale diodes with a single transfer-printing step using a temperature-enhanced process. The electrical characterization of individual MIM nanodiodes was performed using a conductive atomic force microscope (AFM) setup. Our analysis shows that the tunneling current is the dominant conduction mechanism, and the electrical measurement data agree well with experimental data on previously fabricated microscale diodes and numerical simulations. © 2012 American Chemical Society

Transurethral vaporesection of prostate: diode laser or thulium laser?

PubMed

Tan, Xinji; Zhang, Xiaobo; Li, Dongjie; Chen, Xiong; Dai, Yuanqing; Gu, Jie; Chen, Mingquan; Hu, Sheng; Bai, Yao; Ning, Yu

2018-05-01

This study compared the safety and effectiveness of the diode laser and thulium laser during prostate transurethral vaporesection for treating benign prostate hyperplasia (BPH). We retrospectively analyzed 205 patients with BPH who underwent a diode laser or thulium laser technique for prostate transurethral vaporesection from June 2016 to June 2017 and who were followed up for 3 months. Baseline characteristics of the patients, perioperative data, postoperative outcomes, and complications were compared. We also assessed the International Prostate Symptom Score (IPSS), quality of life (QoL), maximum flow rate (Q max ), average flow rate (AFR), and postvoid residual volume (PVR) at 1 and 3 months postoperatively to evaluate the functional improvement of each group. There were no significant differences between the diode laser and thulium laser groups related to age, prostate volume, operative time, postoperative hospital stays, hospitalization costs, or perioperative data. The catheterization time was 3.5 ± 0.8 days for the diode laser group and 4.7 ± 1.8 days for the thulium laser group (p < 0.05). Each group had dramatic improvements in IPSS, QoL, Q max , AFR, and PVR compared with the preoperative values (p < 0.05), although there were no significant differences between the two groups. Use of both diode laser and thulium laser contributes to safe, effective transurethral vaporesection in patients with symptomatic BPH. Diode laser, however, is better than thulium laser for prostate transurethral vaporesection because of its shorter catheterization time. The choice of surgical approach is more important than the choice of laser types during clinical decision making for transurethral laser prostatectomy.

Peripheral dose measurements with diode and thermoluminescence dosimeters for intensity modulated radiotherapy delivered with conventional and un-conventional linear accelerator

PubMed Central

Kinhikar, Rajesh; Gamre, Poonam; Tambe, Chandrashekhar; Kadam, Sudarshan; Biju, George; Suryaprakash; Magai, C. S.; Dhote, Dipak; Shrivastava, Shyam; Deshpande, Deepak

2013-01-01

The objective of this paper was to measure the peripheral dose (PD) with diode and thermoluminescence dosimeter (TLD) for intensity modulated radiotherapy (IMRT) with linear accelerator (conventional LINAC), and tomotherapy (novel LINAC). Ten patients each were selected from Trilogy dual-energy and from Hi-Art II tomotherapy. Two diodes were kept at 20 and 25 cm from treatment field edge. TLDs (LiF:MgTi) were also kept at same distance. TLDs were also kept at 5, 10, and 15 cm from field edge. The TLDs were read with REXON reader. The readings at the respective distance were recorded for both diode and TLD. The PD was estimated by taking the ratio of measured dose at the particular distance to the prescription dose. PD was then compared with diode and TLD for LINAC and tomotherapy. Mean PD for LINAC with TLD and diode was 2.52 cGy (SD 0.69), 2.07 cGy (SD 0.88) at 20 cm, respectively, while at 25 cm, it was 1.94 cGy (SD 0.58) and 1.5 cGy (SD 0.75), respectively. Mean PD for tomotherapy with TLD and diode was 1.681 cGy SD 0.53) and 1.58 (SD 0.44) at 20 cm, respectively. The PD was 1.24 cGy (SD 0.42) and 1.088 cGy (SD 0.35) at 25 cm, respectively, for tomotherapy. Overall, PD from tomotherapy was found lower than LINAC by the factor of 1.2-1.5. PD measurement is essential to find out the potential of secondary cancer. PD for both (conventional LINAC) and novel LINACs (tomotherapy) were measured and compared with each other. The comparison of the values for PD presented in this work and those published in the literature is difficult because of the different experimental conditions. The diode and TLD readings were reproducible and both the detector readings were comparable. PMID:23531765

A new cryogenic diode thermometer

NASA Astrophysics Data System (ADS)

Courts, S. S.; Swinehart, P. R.; Yeager, C. J.

2002-05-01

While the introduction of yet another cryogenic diode thermometer is not earth shattering, a new diode thermometer, the DT-600 series, recently introduced by Lake Shore Cryotronics, possesses three features that make it unique among commercial diode thermometers. First, these diodes have been probed at the chip level, allowing for the availability of a bare chip thermometer matching a standard curve-an important feature in situations where real estate is at a premium (IR detectors), or where in-situ calibration is difficult. Second, the thermometry industry has assumed that interchangeability should be best at low temperatures. Thus, good interchangeability at room temperatures implies a very good interchangeability at cryogenic temperature, resulting in a premium priced sensor. The DT-600 series diode thermometer is available in an interchangeability band comparable to platinum RTDs with the added advantage of interchangeability to 2 K. Third, and most important, the DT-600 series diode does not exhibit an instability in the I-V characteristic in the 8 K to 20 K temperature range that is observed in other commercial diode thermometer devices [1]. This paper presents performance characteristics for the DT-600 series diode thermometer along with a comparison of I-V curves for this device and other commercial diode thermometers exhibiting an I-V instability.

Microwave noise measurements on double barrier resonant tunneling diodes

NASA Astrophysics Data System (ADS)

Kwaspen, J. J. M.; Heyker, H. C.; Demarteau, J. I. M.; Vanderoer, T. G.

1990-12-01

Double Barrier Resonant Tunneling (DBRT) diodes have nonlinear current voltage characteristics with Negative Differential Resistance (NDR) regions. Biased in one of these NDR regions, the DBRT diode can be used for microwave amplification purposes, so knowledge of the diode's noise behavior is important from a physics point of view. Two noise parameter measurement methods were developed in which the DBRT diode is used in a reflection amplifier configuration with circulator to transform the active one port device into an active two port with separate input and output ports. The Noise Figure (NF) of the DBRT diode must be deembedded from the NF of the reflection amplifier. An equation for the NF of the DBRT diode is derived. Two different measurement methods are used. A (complicated) more exact method uses the measured S parameters of the actual circulator and accounts for reflections at the noise source, NF meter and DBRT diode. A mathematically simple method (three versions) uses only scalar data collected by the NF meter. The results from these two methods are compared and they coincide well.

Comparative scanning electron microscope analysis of diode laser and desensitizing toothpastes for evaluation of efficacy of dentinal tubular occlusion.

PubMed

Reddy, Guntakala Vikram; Akula, Sushma; Malgikar, Suryakanth; Babu, Palaparthy Raja; Reddy, Gooty Jagadish; Josephin, Johnson Juliet

2017-01-01

The present study aims to evaluate the efficacy of diode laser alone and in combination with desensitizing toothpastes in occluding dentinal tubules (both partially occluded and completely occluded tubules) by scanning electron microscope (SEM). Fifty human teeth were extracted, cervical cavities were prepared and etched with 17% ethylenediaminetetraacetic acid, and smear layer was removed to expose the tubules. The teeth were divided into five groups: Group I - Application of NovaMin-formulated toothpaste, Group II - Application of Pro-Argin ™ -formulated toothpaste, Group III - Application of diode laser in noncontact mode, Group IV - NovaMin-formulated toothpaste followed by laser irradiation, and Group V - Pro-Argin ™ -formulated toothpaste followed by laser irradiation. After treatment, quantitative analysis of occluded dentinal tubules was done by SEM analysis. The mean values of percentages of total occlusion of dentinal tubules in Groups I, II, III, IV, and V were 92.73% ± 1.38, 90.67% ± 1.86, 96.57% ± 0.64, 97.3% ± 0.68, and 96.9% ± 6.08, respectively. Addition of diode laser (Groups III, IV, and V) yielded a significant occlusion of the dentinal tubules when compared to desensitizing toothpastes alone (Groups I and II). Diode laser (Group III) has shown more efficacy in occluding dentinal tubules when compared with desensitizing toothpastes which was statistically significant ( P < 0.05). Among the five groups, NovaMin + diode laser (Group IV) showed the highest percentage of occluded dentinal tubules.

GreenLight laser vs diode laser vaporization of the prostate: 3-year results of a prospective nonrandomized study.

PubMed

Guo, Sanwei; Müller, Georg; Bonkat, Gernot; Püschel, Heike; Gasser, Thomas; Bachmann, Alexander; Rieken, Malte

2015-04-01

Laser vaporization of the prostate is one of the alternatives to transurethral resection of the prostate. Short-term studies report a comparable outcome after laser vaporization with the 532 nm 120-W GreenLight high-performance system (HPS) laser and the 980 nm 200 W high-intensity diode (diode) laser. In this study, we analyzed the intermediate-term results of both techniques. From January 2007 to January 2008, 112 consecutive patients with symptomatic benign prostate enlargement were nonrandomly assigned to treatment with the GreenLight laser or the diode laser. Perioperative parameters, postoperative functional outcome, complications, and the reoperation rate at 3 years were analyzed. Improvement of voiding symptoms (International Prostate Symptom Score, quality-of-life) and micturition parameters (maximum flow rate, postvoid residual volume) showed no significant difference between the HPS group and the diode group. A significantly higher reoperation rate was observed in the diode group in comparison to the HPS group (37.5% vs 8.9%, p=0.0003) due to obstructive necrotic tissue (16.1% vs 0%, p=0.0018), bladder neck stricture (16.1% vs 1.8%, p=0.008), and persisting or recurrent adenoma (5.4% vs 7.1%, p=0.70), respectively. Both lasers lead to comparable improvement of voiding parameters and micturition symptoms. Treatment with the 200 W diode laser led to a significantly higher reoperation rate, which might be attributed to a higher degree of coagulation necrosis. Thus, a careful clinical application of this diode laser type is warranted.

Polarization/Spatial Combining of Laser-Diode Pump Beams

NASA Technical Reports Server (NTRS)

Gelsinger, Paul; Liu, Duncan

2008-01-01

A breadboard version of an optical beam combiner is depicted which make it possible to use the outputs of any or all of four multimode laser diodes to pump a non-planar ring oscillator (NPRO) laser. The output of each laser diode has a single-mode profile in the meridional plane containing an axis denoted the 'fast' axis and a narrower multimode profile in the orthogonal meridional plane, which contains an axis denoted the 'slow' axis and a narrower multimode profile in the orthogonal meridional plane, which contains an axis denoted the 'slow' axis. One of the purposes served by the beam-combining optics is to reduce the fast-axis numerical aperture (NA) of the laser-diode output to match the NA of the optical fiber. Along the slow axis, the unmodified laser-diode NA is already well matched to the fiber optic NA, so no further slow-axis beam shaping is needed. In this beam combiner, the laser-diode outputs are collimated by aspherical lenses, then half-wave plates and polarizing beam splitters are used to combine the four collimated beams into two beams. Spatial combination of the two beams and coupling into the optical fiber is effected by use of anamorphic prisms, mirrors, and a focusing lens. The anamorphic prisms are critical elements in the NA-matching scheme, in that they reduce the fast-axis beam width to 1/6 of its original values. Inasmuch as no slow-axis beam shaping is needed, the collimating and focusing lenses are matched for 1:1 iumaging. Because these lenses are well corrected for infinite conjugates the combiner offers diffraction-limited performance along both the fast and slow axes.

Electrical characteristics of TMAH-surface treated Ni/Au/Al2O3/GaN MIS Schottky structures

NASA Astrophysics Data System (ADS)

Reddy, M. Siva Pratap; Lee, Jung-Hee; Jang, Ja-Soon

2014-03-01

The electrical characteristics and reverse leakage mechanisms of tetramethylammonium hydroxide (TMAH) surface-treated Ni/Au/Al2O3/GaN metal-insulator-semiconductor (MIS) diodes were investigated by using the current-voltage ( I-V) and capacitance-voltage ( C-V) characteristics. The MIS diode was formed on n-GaN after etching the AlGaN in the AlGaN/GaN heterostructures. The TMAH-treated MIS diode showed better Schottky characteristics with a lower ideality factor, higher barrier height and lower reverse leakage current compared to the TMAH-free MIS diode. In addition, the TMAH-free MIS diodes exhibited a transition from Poole-Frenkel emission at low voltages to Schottky emission at high voltages, whereas the TMAH-treated MIS diodes showed Schottky emission over the entire voltage range. Reasonable mechanisms for the improved device-performance characteristics in the TMAH-treated MIS diode are discussed in terms of the decreased interface state density or traps associated with an oxide material and the reduced tunneling probability.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Guo, Yao; Huang, Yang; Wang, Junxi

In this work, a novel carrier concentration adjusting insertion layer for InGaN/GaN multiple quantum wells light-emitting diodes was proposed to mitigate the efficiency droop and improve optical output properties at high current density. The band diagrams and carrier distributions were investigated numerically and experimentally. The results indicate that due to the newly formed electron barrier and the adjusted built-in field near the active region, the hole injection has been improved and a better radiative recombination can be achieved. Compared to the conventional LED, the light output power of our new structure with the carrier concentration adjusting layers is enhanced bymore » 127% at 350 mA , while the efficiency only droops to be 88.2% of its peak efficiency.« less

Electro-Thermal Simulation Studies of SiC Junction Diodes Containing Screw Dislocations Under High Reverse-Bias Operation

NASA Technical Reports Server (NTRS)

Joshi, R. P.

2001-01-01

The objective of this work was to conduct a modeling study of SiC P-N junction diodes operating under high reverse biased conditions. Analytical models and numerical simulation capabilities were to be developed for self-consistent electro-thermal analysis of the diode current-voltage (I-V) characteristics. Data from GRC indicate that screw dislocations are unavoidable in large area SiC devices, and lead to changes in the SiC diode electrical response characteristics under high field conditions. For example, device instability and failures linked to internal current filamentation have been observed. The physical origin of these processes is not well understood, and quantitative projections of the electrical behavior under high field and temperature conditions are lacking. Thermal calculations for SiC devices have not been reported in the literature either. So estimates or projections of peak device temperatures and power limitations do not exist. This numerical study and simulation analysis was aimed at resolving some of the above issues. The following tasks were successfully accomplished: (1) Development of physically based models using one- and two-dimensional drift-diffusion theory for the transport behavior and I-V characteristics; (2) One- and two-dimensional heat flow to account for internal device heating. This led to calculations of the internal temperature profiles, which in turn, were used to update the electrical transport parameters for a self-consistent analysis. The temperature profiles and the peak values were thus obtainable for a given device operating condition; (3) Inclusion of traps assumed to model the presence of internal screw dislocations running along the longitudinal direction; (4) Predictions of the operating characteristics with and without heating as a function of applied bias with and without traps. Both one and two-dimensional cases were implemented; (5) Assessment of device stability based on the operating characteristics. The presence of internal non-uniformities, particularly filamentary structures, was probed and demonstrated; (6) Cause and physical origins of filamentary behavior and unstable I-V characteristics were made transparent; (7) It was demonstrated that diodes containing defects would be more prone to thermal breakdown associated with the temperature dependent decrease in the thermal conductivity; and (8) Finally, negative differential resistance (S-shaped NDR) which can potential lead to device instability and filamentary behavior was shown to occur for diodes containing a line of defects such as could be associated with a screw dislocation line.

Investigation of p-type depletion doping for InGaN/GaN-based light-emitting diodes

NASA Astrophysics Data System (ADS)

Zhang, Yiping; Zhang, Zi-Hui; Tan, Swee Tiam; Hernandez-Martinez, Pedro Ludwig; Zhu, Binbin; Lu, Shunpeng; Kang, Xue Jun; Sun, Xiao Wei; Demir, Hilmi Volkan

2017-01-01

Due to the limitation of the hole injection, p-type doping is essential to improve the performance of InGaN/GaN multiple quantum well light-emitting diodes (LEDs). In this work, we propose and show a depletion-region Mg-doping method. Here we systematically analyze the effectiveness of different Mg-doping profiles ranging from the electron blocking layer to the active region. Numerical computations show that the Mg-doping decreases the valence band barrier for holes and thus enhances the hole transportation. The proposed depletion-region Mg-doping approach also increases the barrier height for electrons, which leads to a reduced electron overflow, while increasing the hole concentration in the p-GaN layer. Experimentally measured external quantum efficiency indicates that Mg-doping position is vitally important. The doping in or adjacent to the quantum well degrades the LED performance due to Mg diffusion, increasing the corresponding nonradiative recombination, which is well supported by the measured carrier lifetimes. The experimental results are well numerically reproduced by modifying the nonradiative recombination lifetimes, which further validate the effectiveness of our approach.

Test apparatus for locating shorts during assembly of electrical buses

NASA Technical Reports Server (NTRS)

Deboo, G. J.; Devine, D. L. (Inventor)

1981-01-01

A test apparatus is described for locating electrical shorts that is especially suited for use while an electrical circuit is being fabricated or assembled. A ring counter derives input pulses from a square wave oscillator. The outputs of the counter are fed through transistors to an array of light emitting diodes. Each diode is connected to an electrical conductor, such as a bus bar, that is to be tested. In the absence of a short between the electrical conductors the diodes are sequentially illuminated. When a short occurs, a comparator/multivibrator circuit triggers an alarm and stops the oscillator and the sequential energization of the diodes. The two diodes that remain illuminated identify the electrical conductors that are shorted.

Investigation on a radiation tolerant betavoltaic battery based on Schottky barrier diode.

PubMed

Liu, Yebing; Hu, Rui; Yang, Yuqing; Wang, Guanquan; Luo, Shunzhong; Liu, Ning

2012-03-01

An Au-Si Schottky barrier diode was studied as the energy conversion device of betavoltaic batteries. Its electrical performance under radiation of Ni-63 and H-3 sources and radiation degradation under Am-241 were investigated and compared with those of the p-n junction. The results show that the Schottky diode had a higher I(sc) and harder radiation tolerance but lower V(oc) than the p-n junction. The results indicated that the Schottky diode can be a promising candidate for energy conversion of betavoltaic batteries. Copyright © 2011 Elsevier Ltd. All rights reserved.

The advances and characteristics of high-power diode laser materials processing

NASA Astrophysics Data System (ADS)

Li, Lin

2000-10-01

This paper presents a review of the direct applications of high-power diode lasers for materials processing including soldering, surface modification (hardening, cladding, glazing and wetting modifications), welding, scribing, sheet metal bending, marking, engraving, paint stripping, powder sintering, synthesis, brazing and machining. The specific advantages and disadvantages of diode laser materials processing are compared with CO 2, Nd:YAG and excimer lasers. An effort is made to identify the fundamental differences in their beam/material interaction characteristics and materials behaviour. Also an appraisal of the future prospects of the high-power diode lasers for materials processing is given.

Effects of 980 diode laser treatment combined with scaling and root planing on periodontal pockets in chronic periodontitis patients

NASA Astrophysics Data System (ADS)

Fallah, Alireza

2010-02-01

Objective: This study compared the effect of 980 Diode laser + scaling and root planing (SRP) versus SRP alone in the treatment of chronic periodontitis. Method: 21 healthy patients with moderate periodontitis with a probing depth of at least 5mm were included in the study. A total of 42 sites were treated during 6weeks with a combination of 980 Diode laser and SRP (21 sites) or SRP alone (21 sites). The gingival index (GI), probing pocket depth (PPD) and bleeding on probing (BOP) were examined at the baseline and after 6 weeks after the start of treatment. Results: Both groups showed statistically significant improvements in GI, BOP and PPD after treatment. The results also showed significant improvement from laser+ SRP group to SRP alone group. Conclusion: The present data suggest that treatment of chronic periodontitis with either 980 Diode laser + SRP or SRP alone results in statistically significant improvements in the clinical parameters. The combination of 980 Diode laser irradiation in the gingival sulcus and SRP, was significantly better as compared to SRP alone.

Role of diode lasers in oro-facial pain management.

PubMed

Javed, F; Kellesarian, S V; Romanos, G E

2017-01-01

With the increasing use of low level laser therapy (LLLT) in clinical dentistry, the aim of the present study was to assess the effectiveness of diode lasers in the management of orofacial pain. Indexed databases were searched without language and time restrictions up to and including July 2016 using different combinations of the following key words: oral, low level laser therapy, dental, pain, diode lasers, discomfort and analgesia. From the literature reviewed it is evident that LLLT is effective compared to traditional procedures in the management of oro-facial pain associated to soft tissue and hard tissue conditions such as premalignant lesions, gingival conditions and dental extractions. However, it remains to be determined which particular wavelength will produce the more favorable and predictable outcome in terms of pain reduction. It is highly recommended that further randomized control trials with well-defined control groups should be performed to determine the precise wavelengths of the diode lasers for the management of oro-facial pain. Within the limits of the present review, it is concluded that diode lasers therapy is more effective in the management of oro-facial pain compared to traditional procedures.

Microwave-signal generation in a planar Gunn diode with radiation exposure taken into account

DOE Office of Scientific and Technical Information (OSTI.GOV)

Obolenskaya, E. S., E-mail: bess009@mail.ru, E-mail: obolensk@rf.unn.ru; Tarasova, E. A.; Churin, A. Yu.

2016-12-15

Microwave-signal generation in planar Gunn diodes with a two-dimensional electron gas, in which we previously studied steady-state electron transport, is theoretically studied. The applicability of a control electrode similar to a field-effect transistor gate to control the parameters of the output diode microwave signal is considered. The results of physical-topological modeling of semiconductor structures with different diode active-region structures, i.e., without a quantum well, with one and two quantum wells separated by a potential barrier, are compared. The calculated results are compared with our previous experimental data on recording Gunn generation in a Schottky-gate field-effect transistor. It is theoretically andmore » experimentally shown that the power of the signal generated by the planar Gunn diode with a quantum well and a control electrode is sufficient to implement monolithic integrated circuits of different functionalities. It is theoretically and experimentally shown that the use of a control electrode on account of the introduction of corrective feedback allows a significant increase in the radiation resistance of a microwave generator with Schottky-gate field-effect transistors.« less

Comparison of the Antibacterial Effect of 810 nm Diode Laser and Photodynamic Therapy in Reducing the Microbial Flora of Root Canal in Endodontic Retreatment in Patients With Periradicular Lesions

PubMed Central

Asnaashari, Mohammad; Godiny, Mostafa; Azari-Marhabi, Saranaz; Tabatabaei, Fahimeh Sadat; Barati, Maryam

2016-01-01

Introduction: The aim of this study was to compare the antibacterial efficacy of diode laser 810nm and photodynamic therapy (PDT) in reducing bacterial microflora in endodontic retreatment of teeth with periradicular lesion. Methods: In this in vivo clinical trial, 20 patients who needed endodontic retreatment were selected. After conventional chemo mechanical preparation of root canals, microbiological samples were taken with sterile paper point (PP), held in thioglycollate broth, and then were transferred to the microbiological lab. In the first group, PDT with methylene blue (MB) and diode laser (810 nm, 0.2 W, 40 seconds) was performed and in the second group diode laser (810 nm, 1.2 W, 30 seconds) was irradiated. Then second samples were taken from all canals. Results: CFU/ml amounts showed statistically significant reduction in both groups (P < 0.001). CFU/ml amounts were compared between the two groups and there was no statistical difference. Conclusion: PDT and diode laser 810 nm irradiation are effective methods for root canal disinfection. PDT is a suitable alternative for diode laser 810 nm irradiation, because of lower thermal risk on root dentin. PMID:27330705

Advanced wave field sensing using computational shear interferometry

NASA Astrophysics Data System (ADS)

Falldorf, Claas; Agour, Mostafa; Bergmann, Ralf B.

2014-07-01

In this publication we give a brief introduction into the field of Computational Shear Interferometry (CoSI), which allows for determining arbitrary wave fields from a set of shear interferograms. We discuss limitations of the method with respect to the coherence of the underlying wave field and present various numerical methods to recover it from its sheared representations. Finally, we show experimental results on Digital Holography of objects with rough surface using a fiber coupled light emitting diode and quantitative phase contrast imaging as well as numerical refocusing in Differential Interference Contrast (DIC) microscopy.

Researching the 915 nm high-power and high-brightness semiconductor laser single chip coupling module

NASA Astrophysics Data System (ADS)

Wang, Xin; Wang, Cuiluan; Wu, Xia; Zhu, Lingni; Jing, Hongqi; Ma, Xiaoyu; Liu, Suping

2017-02-01

Based on the high-speed development of the fiber laser in recent years, the development of researching 915 nm semiconductor laser as main pumping sources of the fiber laser is at a high speed. Because the beam quality of the laser diode is very poor, the 915 nm laser diode is generally based on optical fiber coupling module to output the laser. Using the beam-shaping and fiber-coupling technology to improve the quality of output beam light, we present a kind of high-power and high-brightness semiconductor laser module, which can output 13.22 W through the optical fiber. Based on 915 nm GaAs semiconductor laser diode which has output power of 13.91 W, we describe a thoroughly detailed procedure for reshaping the beam output from the semiconductor laser diode and coupling the beam into the optical fiber of which the core diameter is 105 μm and the numerical aperture is 0.18. We get 13.22 W from the output fiber of the module at 14.5 A, the coupling efficiency of the whole module is 95.03% and the brightness is 1.5 MW/cm2 -str. The output power of the single chip semiconductor laser module achieves the advanced level in the domestic use.

Adjunctive Non-Surgical Therapy of Inflamed Periodontal Pockets During Maintenance Therapy Using Diode Laser: A Randomized Clinical Trial.

PubMed

Nguyen, Naomi-Trang; Byarlay, Matthew R; Reinhardt, Richard A; Marx, David B; Meinberg, Trudy A; Kaldahl, Wayne B

2015-10-01

Numerous studies have documented the clinical outcomes of laser therapy for untreated periodontitis, but very few have reported on lasers treating inflamed pockets during maintenance therapy. The aim of this study is to compare the effectiveness of scaling and root planing (SRP) plus the adjunctive use of diode laser therapy to SRP alone on changes in the clinical parameters of disease and on the gingival crevicular fluid (GCF) inflammatory mediator interleukin-1β (IL-1β) in patients receiving regular periodontal maintenance therapy. This single-masked and randomized, controlled, prospective study includes 22 patients receiving regular periodontal maintenance therapy who had one or more periodontal sites with a probing depth (PD) ≥ 5 mm with bleeding on probing (BOP). Fifty-six sites were treated with SRP and adjunctive laser therapy (SRP + L). Fifty-eight sites were treated with SRP alone. Clinical parameters, including PD, clinical attachment level (CAL), and BOP, and GCF IL-1β levels were measured immediately before treatment (baseline) and 3 months after treatment. Sites treated with SRP + L and SRP alone resulted in statistically significant reductions in PD and BOP and gains in CAL. These changes were not significantly different between the two therapies. Similarly, differences in GCF IL-1β levels between SRP + L and SRP alone were not statistically significant. In periodontal maintenance patients, SRP + L did not enhance clinical outcomes compared to SRP alone in the treatment of inflamed sites with ≥ 5 mm PD.

Experimental and computational investigation of graphene/SAMs/n-Si Schottky diodes

NASA Astrophysics Data System (ADS)

Aydin, H.; Bacaksiz, C.; Yagmurcukardes, N.; Karakaya, C.; Mermer, O.; Can, M.; Senger, R. T.; Sahin, H.; Selamet, Y.

2018-01-01

We have investigated the effect of two different self-assembled monolayers (SAMs) on electrical characteristics of bilayer graphene (BLG)/n-Si Schottky diodes. Novel 4″bis(diphenylamino)-1, 1‧:3″-terphenyl-5‧ carboxylic acids (TPA) and 4,4-di-9H-carbazol-9-yl-1,1‧:3‧1‧-terphenyl-5‧ carboxylic acid (CAR) aromatic SAMs have been used to modify n-Si surfaces. Cyclic voltammetry (CV) and Kelvin probe force microscopy (KPFM) results have been evaluated to verify the modification of n-Si surface. The current-voltage (I-V) characteristics of bare and SAMs modified devices show rectification behaviour verifying a Schottky junction at the interface. The ideality factors (n) from ln(I)-V dependences were determined as 2.13, 1.96 and 2.07 for BLG/n-Si, BLG/TPA/n-Si and BLG/CAR/n-Si Schottky diodes, respectively. In addition, Schottky barrier height (SBH) and series resistance (Rs) of SAMs modified diodes were decreased compared to bare diode due to the formation of a compatible interface between graphene and Si as well as π-π interaction between aromatic SAMs and graphene. The CAR-based device exhibits better diode characteristic compared to the TPA-based device. Computational simulations show that the BLG/CAR system exhibits smaller energy-level-differences than the BLG/TPA, which supports the experimental findings of a lower Schottky barrier and series resistance in BLG/CAR diode.

A New Approach for the Treatment of Lateral Periodontal Cysts with an 810-nm Diode Laser.

PubMed

Isola, Gaetano; Matarese, Giovanni; Lo Giudice, Giuseppe; Briguglio, Francesco; Alibrandi, Angela; Crupi, Andrea; Cordasco, Giancarlo; Ramaglia, Luca

The aim of this study was to test whether the combination of diode laser therapy and surgical treatment for a lateral periodontal cyst (LPC) would result in greater clinical improvement compared with surgery alone. A total of 18 patients with LPCs were assessed for eligibility for this study. At baseline, each patient was randomly allocated to one of two regimens: diode laser plus surgery (test group) or traditional surgical treatment alone (control group). Healing parameters were assessed at 7 to 21 days to monitor short-term complications, and periodontal parameters were assessed at 3, 6, and 12 months to evaluate long-term healing. The test group demonstrated highly significant differences in both the short-term and long-term parameters compared with the control group. This study showed that diode laser treatment results in a shorter wound-healing period and could be considered valuable for the surgical treatment of LPCs.

Novel five-state latch using double-peak negative differential resistance and standard ternary inverter

NASA Astrophysics Data System (ADS)

Shin, Sunhae; Rok Kim, Kyung

2016-04-01

We propose complement double-peak negative differential resistance (NDR) devices with ultrahigh peak-to-valley current ratio (PVCR) over 106 by combining tunnel diode with conventional CMOS and its compact five-state latch circuit by introducing standard ternary inverter (STI). At the “high”-state of STI, n-type NDR device (tunnel diode with nMOS) has 1st NDR characteristics with 1st peak and valley by band-to-band tunneling (BTBT) and trap-assisted tunneling (TAT), whereas p-type NDR device (tunnel diode with pMOS) has second NDR characteristics from the suppression of diode current by off-state MOSFET. The “intermediate”-state of STI permits double-peak NDR device to operate five-state latch with only four transistors, which has 33% area reduction compared with that of binary inverter and 57% bit-density reduction compared with binary latch.

Inkjet Printing of Organic Light-Emitting Diodes Based on Alcohol-Soluble Polyfluorenes

NASA Astrophysics Data System (ADS)

Odod, A. V.; Gadirov, R. M.; Solodova, T. A.; Kurtsevich, A. E.; Il'gach, D. M.; Yakimanskii, A. V.; Burtman, V.; Kopylova, T. N.

2018-04-01

Ink compositions for inkjet printing based on poly(9.9-dioctylfluorene) and its alcohol-soluble analog are created. Current-voltage, brightness-voltage, and spectral characteristics are compared for one- and twolayer polymer structures of organic light-emitting diodes. It is shown that the efficiency of the alcohol-soluble polyfluorene analog is higher compared to poly(9.9-dioctylfluorene), and the possibility of viscosity optimization is higher compared to aromatic chlorinated solvents.

Speckle reduction in laser projection displays through angle and wavelength diversity.

PubMed

Tran, Trinh-Thi-Kim; Svensen, Øyvind; Chen, Xuyuan; Akram, Muhammad Nadeem

2016-02-20

Speckle is the main obstacle for the use of laser light sources in projection technology. This paper focuses on speckle suppression by the reduction of temporal coherence which is provided by the broadband laser light. The investigation of the effect of laser spectrum width and multiple lasers on speckle contrast is discussed. A broader spectrum width of the laser light is attained by the use of multiple semiconductor laser diodes of the broad area type. Measurements of speckle contrast with and without angle diversity are performed for two and four laser diodes. The measurement of speckle contrast for a single laser diode is also presented for comparison. The experimental results show that multiple laser diodes provide lower speckle contrast as compared to a single laser diode. In addition, it is also shown in this paper that the wavelength distribution of independent laser diodes has an effect on speckle contrast. Two different types of blue laser diodes, Nichia NUB802T and Nichia NUB801E, which have slightly different central wavelengths, were used for the measurements. Four laser diodes with a combination of two types of laser diodes offer better speckle contrast reduction than four laser diodes of the same type due to an effective broader spectrum. Additional speckle contrast reduction is achieved through the angle diversity by using a dynamic deformable mirror.

Novel 755-nm diode laser vs. conventional 755-nm scanned alexandrite laser: Side-by-side comparison pilot study for thorax and axillary hair removal.

PubMed

Paasch, Uwe; Wagner, Justinus A; Paasch, Hartmut W

2015-01-01

Alexandrite (755 nm) and diode lasers (800-810 nm) are commonly used for hair removal. The alexandrite laser technology is somewhat cumbersome whereas new diode lasers are more robust. Recently, alexandrite-like 755 nm wavelength diodes became available. To compare the efficacy, tolerability, and subject satisfaction of a 755 nm diode laser operated in conventional (HR) and non-conventional in-motion (SHR) modes with a conventional scanned alexandrite 755 nm laser for chest and axillary hair removal. A prospective, single-center, proof of principle study was designed to evaluate the safety, efficacy and handling of a 755 nm diode laser system in comparison to a standard alexandrite 755 nm scanning hair removal laser. The new 755 nm diode is suitable to be used in SHR and HR mode and has been tested for its safety, efficacy and handling in a volunteer with success. Overall, both systems showed a high efficacy in hair reduction (88.8% 755 nm diode laser vs. 77.7% 755 nm alexandrite laser). Also, during the study period, no severe adverse effects were reported. The new 755 nm diode laser is as effective and safe as the traditional 755 nm alexandrite laser. Additionally, treatment with the 755 nm diode laser with HR and SHR modes was found to be less painful.

Combinational light emitting diode-high frequency focused ultrasound treatment for HeLa cell.

PubMed

Choe, Se-Woon; Park, Kitae; Park, Chulwoo; Ryu, Jaemyung; Choi, Hojong

2017-12-01

Light sources such as laser and light emitting diode or ultrasound devices have been widely used for cancer therapy and regenerative medicines, since they are more cost-effective and less harmful than radiation therapy, chemotherapy or magnetic treatment. Compared to laser and low intensity ultrasound techniques, light emitting diode and high frequency focused ultrasound shows enhanced therapeutic effects, especially for small tumors. We propose combinational light emitting diode-high frequency focused ultrasound treatment for human cervical cancer HeLa cells. Individual red, green, and blue light emitting diode light only, high frequency focused ultrasound only, or light emitting diode light combined with high frequency focused ultrasound treatments were applied in order to characterize the responses of HeLa cells. Cell density exposed by blue light emitting diode light combined with high frequency focused ultrasound (2.19 ± 0.58%) was much lower than that of cells exposed by red and green light emitting diode lights (81.71 ± 9.92% and 61.81 ± 4.09%), blue light emitting diode light (11.19 ± 2.51%) or high frequency focused ultrasound only (9.72 ± 1.04%). We believe that the proposed combinational blue light emitting diode-high frequency focused ultrasound treatment could have therapeutic benefits to alleviate cancer cell proliferation.

Controlled feasibility trial comparing the use of 1470nm and 940nm diode laser for the treatment of hyperplastic inferior nasal turbinates

NASA Astrophysics Data System (ADS)

Sroka, Ronald; Havel, Miriam; Leunig, Andreas; Betz, Christian S.

2012-02-01

Introduction: So far various laser systems have been used for volume reduction of hyperplastic nasal turbinates. In case of endonasal application, fiber controlled diode lasers are preferred due to reasons of cost and practicability. The aim of this clinical study was to compare the coagulative tissue effects using either λ=1470nm vs. λ=940nm emitting lasers in treatment of hyperplastic inferior nasal turbinates in an intraindividual manner. Patients and methods: This prospective, randomized, double-blind, clinical feasibility trial included 20 patients suffering from hyperplastic inferior nasal turbinates. In each case, one nasal cavity was treated using 1470nm laser at 4- 5W, the other one with 940nm laser at 12W. Treatment was performed endoscopically controlled in non-contact mode. Clinical presentation and patients symptoms were documented preoperatively and on day 1, 3, 7, 14 and 21 postoperatively using rhinomanometry, standardized questionnaires including SNOT 20 GAV (German adapted version), and separate endoscopic examination respectively. Results: None of the patients showed infections, hemorrhages or other complications occurred intra- or postoperatively. The mean operation time was significantly shorter using the 1470nm diode laser as compared to the 940nm laser, thus lower energy was applied. There was a significant reduction of nasal obstruction on day 21 postoperatively compared to the preoperative condition on both sides regardless of the laser system used. Evaluation of the SNOT-Scores as assessed before and three weeks after surgery showed significant subjective improvements. Conclusion: Compared with standard application of 940nm diode laser, 1470nm diode laser application provides an equivalent tissue reduction in shorter operation time using less total energy and a comparable relief of nasal obstruction postoperatively.

Comparative scanning electron microscope analysis of diode laser and desensitizing toothpastes for evaluation of efficacy of dentinal tubular occlusion

PubMed Central

Reddy, Guntakala Vikram; Akula, Sushma; Malgikar, Suryakanth; Babu, Palaparthy Raja; Reddy, Gooty Jagadish; Josephin, Johnson Juliet

2017-01-01

Background: The present study aims to evaluate the efficacy of diode laser alone and in combination with desensitizing toothpastes in occluding dentinal tubules (both partially occluded and completely occluded tubules) by scanning electron microscope (SEM). Materials and Methods: Fifty human teeth were extracted, cervical cavities were prepared and etched with 17% ethylenediaminetetraacetic acid, and smear layer was removed to expose the tubules. The teeth were divided into five groups: Group I – Application of NovaMin-formulated toothpaste, Group II – Application of Pro-Argin™-formulated toothpaste, Group III – Application of diode laser in noncontact mode, Group IV – NovaMin-formulated toothpaste followed by laser irradiation, and Group V – Pro-Argin™-formulated toothpaste followed by laser irradiation. After treatment, quantitative analysis of occluded dentinal tubules was done by SEM analysis. Results: The mean values of percentages of total occlusion of dentinal tubules in Groups I, II, III, IV, and V were 92.73% ± 1.38, 90.67% ± 1.86, 96.57% ± 0.64, 97.3% ± 0.68, and 96.9% ± 6.08, respectively. Addition of diode laser (Groups III, IV, and V) yielded a significant occlusion of the dentinal tubules when compared to desensitizing toothpastes alone (Groups I and II). Conclusion: Diode laser (Group III) has shown more efficacy in occluding dentinal tubules when compared with desensitizing toothpastes which was statistically significant (P < 0.05). Among the five groups, NovaMin + diode laser (Group IV) showed the highest percentage of occluded dentinal tubules. PMID:29398853

Investigation on efficiency declines due to spectral overlap between LDAs pump and laser medium in high power double face pumped slab laser

NASA Astrophysics Data System (ADS)

Lang, Ye; Chen, Yanzhong; Liao, Lifen; Guo, Guangyan; He, Jianguo; Fan, Zhongwei

2018-03-01

In high power diode lasers, the input cooling water temperature would affect both output power and output spectrum. In double face pumped slab laser, the spectrum of two laser diode arrays (LDAs) must be optimized for efficiency reason. The spectrum mismatch of two LDAs would result in energy storing decline. In this work, thermal induced efficiency decline due to spectral overlap between high power LDAs and laser medium was investigated. A numerical model was developed to describe the energy storing variation with changing LDAs cooling water temperature and configuration (series/parallel connected). A confirmatory experiment was conducted using a double face pumped slab module. The experiment results show good agreements with simulations.

Light-modulating pressure sensor with integrated flexible organic light-emitting diode.

PubMed

Cheneler, D; Vervaeke, M; Thienpont, H

2014-05-01

Organic light-emitting diodes (OLEDs) are used almost exclusively for display purposes. Even when implemented as a sensing component, it is rarely in a manner that exploits the possible compliance of the OLED. Here it is shown that OLEDs can be integrated into compliant mechanical micro-devices making a new range of applications possible. A light-modulating pressure sensor is considered, whereby the OLED is integrated with a silicon membrane. It is shown that such devices have potential and advantages over current measurement techniques. An analytical model has been developed that calculates the response of the device. Ray tracing numerical simulations verify the theory and show that the design can be optimized to maximize the resolution of the sensor.

Enhanced hole transport in InGaN/GaN multiple quantum well light-emitting diodes with a p-type doped quantum barrier.

PubMed

Ji, Yun; Zhang, Zi-Hui; Tan, Swee Tiam; Ju, Zhen Gang; Kyaw, Zabu; Hasanov, Namig; Liu, Wei; Sun, Xiao Wei; Demir, Hilmi Volkan

2013-01-15

We study hole transport behavior of InGaN/GaN light-emitting diodes with the dual wavelength emission method. It is found that at low injection levels, light emission is mainly from quantum wells near p-GaN, indicating that hole transport depth is limited in the active region. Emission from deeper wells only occurs under high current injection. However, with Mg-doped quantum barriers, holes penetrate deeper within the active region even under low injection, increasing the radiative recombination. Moreover, the improved hole transport leads to reduced forward voltage and enhanced light generation. This is also verified by numerical analysis of hole distribution and energy band structure.

Diode Laser Ear Piercing: A Novel Technique.

PubMed

Suseela, Bibilash Babu; Babu, Preethitha; Chittoria, Ravi Kumar; Mohapatra, Devi Prasad

2016-01-01

Earlobe piercing is a common office room procedure done by a plastic surgeon. Various methods of ear piercing have been described. In this article, we describe a novel method of laser ear piercing using the diode laser. An 18-year-old female patient underwent an ear piercing using a diode laser with a power of 2.0 W in continuous mode after topical local anaesthetic and pre-cooling. The diode laser was fast, safe, easy to use and highly effective way of ear piercing. The advantages we noticed while using the diode laser over conventional methods were more precision, minimal trauma with less chances of hypertrophy and keloids, no bleeding with coagulation effect of laser, less time taken compared to conventional method and less chance of infection due to thermal heat effect of laser.

A new fabrication technique for back-to-back varactor diodes

NASA Technical Reports Server (NTRS)

Smith, R. Peter; Choudhury, Debabani; Martin, Suzanne; Frerking, Margaret A.; Liu, John K.; Grunthaner, Frank A.

1992-01-01

A new varactor diode process has been developed in which much of the processing is done from the back of an extremely thin semiconductor wafer laminated to a low-dielectric substrate. Back-to-back BNN diodes were fabricated with this technique; excellent DC and low-frequency capacitance measurements were obtained. Advantages of the new technique relative to other techniques include greatly reduced frontside wafer damage from exposure to process chemicals, improved capability to integrate devices (e.g. for antenna patterns, transmission lines, or wafer-scale grids), and higher line yield. BNN diodes fabricated with this technique exhibit approximately the expected capacitance-voltage characteristics while showing leakage currents under 10 mA at voltages three times that needed to deplete the varactor. This leakage is many orders of magnitude better than comparable Schottky diodes.

Five-year comparative study on conventional and laser-assisted therapy of periimplantitis and periodontitis

NASA Astrophysics Data System (ADS)

Bach, Georg; Neckel, Claus P.

2000-03-01

Numerous groups have recommended the use of the diode laser to decontaminate infected root and implant surfaces. The aim of this study was to show the outcome after laser assisted and conventional therapy of periimplantitis and periodontitis administering approved treatment protocols. Between 1994 and 1999 a total of 50 patients with periimplantitis (20) and periodontitis (30) were treated in two groups each. Clinical, microbiological and radiographic evaluation was performed before and 6, 12, 24, 36, 48 and 60 months after treatment. In addition to the conventional treatment protocol, flap surgery, the tooth or implant surface was decontaminated with a 810 nm diode laser using 1 Watt output for 20 sec (CW mode). All accessible surfaces were decontaminated at the follow up dates. In the periimplantitis group recurrence of the marker bacteria was higher and faster over time for the conventionally operated patients. Also the clinical and radiographic reevaluation showed significantly better results. The laser group of the periodontitis patients also showed significantly better outcome in terms of clinical evaluation, microbiological counts, radiographic evaluation and tooth loss. In comparison to other long term studies our results for the conventional therapy were adequate, the laser assisted therapy brought up significantly better and reproducible results.

Numerical study on exciton transport and light emission for organic light emitting diodes with an emission layer.

PubMed

Kim, K S; Hwang, Y W; Won, T Y

2013-12-01

This paper reports the results of a numerical study on carrier injection and exciton transport in an organic light emitting diode (OLED) structure based on tris (8-hydroxyquinolinato) aluminum (Alq3). Because charge accumulation at the interfaces between the emission layer (EML) and transport layer are believed to increase the recombination rate, which also increases the exciton density, a numerical study was performed on the effect of inserting an EML in the bilayer structure. In the first case considered, the lowest unoccupied molecular orbital (LUMO) of the EML was aligned with the LUMO of the hole transport layer (HTL), whereas the highest occupied molecular orbital (HOMO) of the EML was aligned with the HOMO of the electron transport layer (ETL). In the second case, the LUMO of the EML was aligned with the LUMO of the ETL and the HOMO of the EML was aligned with the HOMO of the HTL. In case of a charge-blocking device, most of the recombination appeared to occur at both edges of the EML because the electric field exhibited a peak in these areas. On the other hand, in the case of the charge-confining device, the electric field was confined at the interface between the EML and ETL. This paper also discussed the effect of the insertion of a doping layer as transport layer.

High-performance noncontact thermal diode via asymmetric nanostructures

NASA Astrophysics Data System (ADS)

Shen, Jiadong; Liu, Xianglei; He, Huan; Wu, Weitao; Liu, Baoan

2018-05-01

Electric diodes, though laying the foundation of modern electronics and information processing industries, suffer from ineffectiveness and even failure at high temperatures. Thermal diodes are promising alternatives to relieve above limitations, but usually possess low rectification ratios, and how to obtain a high-performance thermal rectification effect is still an open question. This paper proposes an efficient contactless thermal diode based on the near-field thermal radiation of asymmetric doped silicon nanostructures. The rectification ratio computed via exact scattering theories is demonstrated to be as high as 10 at a nanoscale gap distance and period, outperforming the counterpart flat-plate diode by more than one order of magnitude. This extraordinary performance mainly lies in the higher forward and lower reverse radiative heat flux within the low frequency band compared with the counterpart flat-plate diode, which is caused by a lower loss and smaller cut-off wavevector of nanostructures for the forward and reversed scheme, respectively. This work opens new routes to realize high performance thermal diodes, and may have wide applications in efficient thermal computing, thermal information processing, and thermal management.

Efficient and bright organic light-emitting diodes on single-layer graphene electrodes

NASA Astrophysics Data System (ADS)

Li, Ning; Oida, Satoshi; Tulevski, George S.; Han, Shu-Jen; Hannon, James B.; Sadana, Devendra K.; Chen, Tze-Chiang

2013-08-01

Organic light-emitting diodes are emerging as leading technologies for both high quality display and lighting. However, the transparent conductive electrode used in the current organic light-emitting diode technologies increases the overall cost and has limited bendability for future flexible applications. Here we use single-layer graphene as an alternative flexible transparent conductor, yielding white organic light-emitting diodes with brightness and efficiency sufficient for general lighting. The performance improvement is attributed to the device structure, which allows direct hole injection from the single-layer graphene anode into the light-emitting layers, reducing carrier trapping induced efficiency roll-off. By employing a light out-coupling structure, phosphorescent green organic light-emitting diodes exhibit external quantum efficiency >60%, while phosphorescent white organic light-emitting diodes exhibit external quantum efficiency >45% at 10,000 cd m-2 with colour rendering index of 85. The power efficiency of white organic light-emitting diodes reaches 80 lm W-1 at 3,000 cd m-2, comparable to the most efficient lighting technologies.

Low-cost/high-efficiency lasers for medical applications in the 14XX-nm regime

NASA Astrophysics Data System (ADS)

Callahan, J. J.; McIntyre, E.; Rafferty, C.; Yanushefski, L.; Bean, D. M.

2011-03-01

Laser therapy is becoming an increasingly popular method of treating numerous dermatological conditions. The widespread use of these devices is often limited by the cost and size. Low cost, portable lasers would expand the laser market further into homes, general practitioners, dermatologists, plastic surgeons, and 3rd world countries. There are numerous light devices currently on the market for hair removal and growth, acne reduction, and wrinkles. These devices are varied, from LEDs to intense pulsed light (IPL) to lasers. One particular disease is leishmaniasis, caused by a parasite carried by sand flies, most often occurring in third world countries. While there are drug therapies available, they sometimes require hospitalization for several days and are very expensive. An RF device has been FDA approved for treatment of leishmaniasis, but costs about $20,000 which is too expensive for widespread use. Since the method is heating the lesion, the same affect could be achieved using an infrared laser. Diode lasers have the capability to be produced in mass quantity for low costs, as shown by the ubiquity of diode lasers in the telecom industry and household appliances. Unfortunately, many diode lasers suffer from poor efficiency, particularly in wavelengths for dermatology. Advances are being made to improve wall plug efficiency of lasers to reduce waste heat and increase output power. In this paper, those efforts being made to develop manufacturing partners to lower the cost while increasing the production volume of long wavelength lasers will be discussed along with performance data and clinical results.

Experimental investigation of factors limiting slow axis beam quality in 9xx nm high power broad area diode lasers

NASA Astrophysics Data System (ADS)

Winterfeldt, M.; Crump, P.; Wenzel, H.; Erbert, G.; Tränkle, G.

2014-08-01

GaAs-based broad-area diode lasers are needed with improved lateral beam parameter product (BPPlat) at high power. An experimental study of the factors limiting BPPlat is therefore presented, using extreme double-asymmetric (EDAS) vertical structures emitting at 910 nm. Continuous wave, pulsed and polarization-resolved measurements are presented and compared to thermal simulation. The importance of thermal and packaging-induced effects is determined by comparing junction -up and -down devices. Process factors are clarified by comparing diodes with and without index-guiding trenches. We show that in all cases studied, BPPlat is limited by a non-thermal BPP ground-level and a thermal BPP, which depends linearly on self-heating. Measurements as a function of pulse width confirm that self-heating rather than bias-level dominates. Diodes without trenches show low BPP ground-level, and a thermal BPP which depends strongly on mounting, due to changes in the temperature profile. The additional lateral guiding in diodes with trenches strongly increases the BPP ground-level, but optically isolates the stripe from the device edges, suppressing the influence of the thermal profile, leading to a BPP-slope that is low and independent of mounting. Trenches are also shown to initiate strain fields that cause parasitic TM-polarized emission with large BPPlat, whose influence on total BPPlat remains small, provided the overall polarization purity is >95%.

Monte Carlo study of si diode response in electron beams.

PubMed

Wang, Lilie L W; Rogers, David W O

2007-05-01

Silicon semiconductor diodes measure almost the same depth-dose distributions in both photon and electron beams as those measured by ion chambers. A recent study in ion chamber dosimetry has suggested that the wall correction factor for a parallel-plate ion chamber in electron beams changes with depth by as much as 6%. To investigate diode detector response with respect to depth, a silicon diode model is constructed and the water/silicon dose ratio at various depths in electron beams is calculated using EGSnrc. The results indicate that, for this particular diode model, the diode response per unit water dose (or water/diode dose ratio) in both 6 and 18 MeV electron beams is flat within 2% versus depth, from near the phantom surface to the depth of R50 (with calculation uncertainty <0.3%). This suggests that there must be some other correction factors for ion chambers that counter-balance the large wall correction factor at depth in electron beams. In addition, the beam quality and field-size dependence of the diode model are also calculated. The results show that the water/diode dose ratio remains constant within 2% over the electron energy range from 6 to 18 MeV. The water/diode dose ratio does not depend on field size as long as the incident electron beam is broad and the electron energy is high. However, for a very small beam size (1 X 1 cm(2)) and low electron energy (6 MeV), the water/diode dose ratio may decrease by more than 2% compared to that of a broad beam.

All-optical analog comparator.

PubMed

Li, Pu; Yi, Xiaogang; Liu, Xianglian; Zhao, Dongliang; Zhao, Yongpeng; Wang, Yuncai

2016-08-23

An analog comparator is one of the core units in all-optical analog-to-digital conversion (AO-ADC) systems, which digitizes different amplitude levels into two levels of logical '1' or '0' by comparing with a defined decision threshold. Although various outstanding photonic ADC approaches have been reported, almost all of them necessitate an electrical comparator to carry out this binarization. The use of an electrical comparator is in contradiction to the aim of developing all-optical devices. In this work, we propose a new concept of an all-optical analog comparator and numerically demonstrate an implementation based on a quarter-wavelength-shifted distributed feedback laser diode (QWS DFB-LD) with multiple quantum well (MQW) structures. Our results show that the all-optical comparator is very well suited for true AO-ADCs, enabling the whole digital conversion from an analog optical signal (continuous-time signal or discrete pulse signal) to a binary representation totally in the optical domain. In particular, this all-optical analog comparator possesses a low threshold power (several mW), high extinction ratio (up to 40 dB), fast operation rate (of the order of tens of Gb/s) and a step-like transfer function.

All-optical analog comparator

PubMed Central

Li, Pu; Yi, Xiaogang; Liu, Xianglian; Zhao, Dongliang; Zhao, Yongpeng; Wang, Yuncai

2016-01-01

An analog comparator is one of the core units in all-optical analog-to-digital conversion (AO-ADC) systems, which digitizes different amplitude levels into two levels of logical ‘1’ or ‘0’ by comparing with a defined decision threshold. Although various outstanding photonic ADC approaches have been reported, almost all of them necessitate an electrical comparator to carry out this binarization. The use of an electrical comparator is in contradiction to the aim of developing all-optical devices. In this work, we propose a new concept of an all-optical analog comparator and numerically demonstrate an implementation based on a quarter-wavelength-shifted distributed feedback laser diode (QWS DFB-LD) with multiple quantum well (MQW) structures. Our results show that the all-optical comparator is very well suited for true AO-ADCs, enabling the whole digital conversion from an analog optical signal (continuous-time signal or discrete pulse signal) to a binary representation totally in the optical domain. In particular, this all-optical analog comparator possesses a low threshold power (several mW), high extinction ratio (up to 40 dB), fast operation rate (of the order of tens of Gb/s) and a step-like transfer function. PMID:27550874

All-optical analog comparator

NASA Astrophysics Data System (ADS)

Li, Pu; Yi, Xiaogang; Liu, Xianglian; Zhao, Dongliang; Zhao, Yongpeng; Wang, Yuncai

2016-08-01

An analog comparator is one of the core units in all-optical analog-to-digital conversion (AO-ADC) systems, which digitizes different amplitude levels into two levels of logical ‘1’ or ‘0’ by comparing with a defined decision threshold. Although various outstanding photonic ADC approaches have been reported, almost all of them necessitate an electrical comparator to carry out this binarization. The use of an electrical comparator is in contradiction to the aim of developing all-optical devices. In this work, we propose a new concept of an all-optical analog comparator and numerically demonstrate an implementation based on a quarter-wavelength-shifted distributed feedback laser diode (QWS DFB-LD) with multiple quantum well (MQW) structures. Our results show that the all-optical comparator is very well suited for true AO-ADCs, enabling the whole digital conversion from an analog optical signal (continuous-time signal or discrete pulse signal) to a binary representation totally in the optical domain. In particular, this all-optical analog comparator possesses a low threshold power (several mW), high extinction ratio (up to 40 dB), fast operation rate (of the order of tens of Gb/s) and a step-like transfer function.

Evaluation of antimicrobial and thermal effects of diode laser on root canal dentin.

PubMed

Kıvanc, B H; Arısu, H D; Sağlam, B C; Akça, G; Gürel, M A; Görgül, G

2017-12-01

The aim of this study was to evaluate the antimicrobial effects of diode laser and temperature rise on the root surface during application. Thirty-six teeth were chemomechanically prepared and irrigated with 2.5% sodium hypochlorite and 17% ethylenediaminetetraacetic acid, and then autoclaved and incubated with a suspension of Enterococcus faecalis. The specimens were randomly divided into three groups (n = 12): Group 1, irradiated by diode laser at 1.2 W; Group 2, irradiated by diode laser at 2 W; and Group 3, irradiated by diode laser at 3 W. The grown bacteria were counted and the mean numbers of the each test tube were determined. The temperature was measured on the external apical third of the root during laser application. The mean values of results for each group were compared using one-way analysis of variance and Tukey test. No significant difference was obtained among the test groups in terms of the colony counts (P > 0.05). According to the temperature changes, there was a significant difference between groups (P < 0.05). Temperature rises were 16.79°C, 10.20°C, and 6.25°C in Group 3, Group 2, and Group 1, respectively. Diode laser irradiation with 1.2 W demonstrated comparable performance with 2 W and 3 W power sets for elimination of E. faecalis from root canal with less temperature rise.

Direct diode lasers and their advantages for materials processing and other applications

NASA Astrophysics Data System (ADS)

Fritsche, Haro; Ferrario, Fabio; Koch, Ralf; Kruschke, Bastian; Pahl, Ulrich; Pflueger, Silke; Grohe, Andreas; Gries, Wolfgang; Eibl, Florian; Kohl, Stefanie; Dobler, Michael

2015-03-01

The brightness of diode lasers is improving continuously and has recently started to approach the level of some solid state lasers. The main technology drivers over the last decade were improvements of the diode laser output power and divergence, enhanced optical stacking techniques and system design, and most recently dense spectral combining. Power densities at the work piece exceed 1 MW/cm2 with commercially available industrial focus optics. These power densities are sufficient for cutting and welding as well as ablation. Single emitter based diode laser systems further offer the advantage of fast current modulation due their lower drive current compared to diode bars. Direct diode lasers may not be able to compete with other technologies as fiber or CO2-lasers in terms of maximum power or beam quality. But diode lasers offer a range of features that are not possible to implement in a classical laser. We present an overview of those features that will make the direct diode laser a very valuable addition in the near future, especially for the materials processing market. As the brightness of diode lasers is constantly improving, BPP of less than 5mm*mrad have been reported with multikW output power. Especially single emitter-based diode lasers further offer the advantage of very fast current modulation due to their low drive current and therefore low drive voltage. State of the art diode drivers are already demonstrated with pulse durations of <10μs and repetition rates can be adjusted continuously from several kHz up to cw mode while addressing power levels from 0-100%. By combining trigger signals with analog modulations nearly any kind of pulse form can be realized. Diode lasers also offer a wide, adaptable range of wavelengths, and wavelength stabilization. We report a line width of less than 0.1nm while the wavelength stability is in the range of MHz which is comparable to solid state lasers. In terms of applications, especially our (broad) wavelength combining technology for power scaling opens the window to new processes of cutting or welding and process control. Fast power modulation through direct current control allows pulses of several microseconds with hundreds of watts average power. Spot sizes of less than 100 μm are obtained at the work piece. Such a diode system allows materials processing with a pulse parameter range that is hardly addressed by any other laser system. High productivity material ablation with cost effective lasers is enabled. The wide variety of wavelengths, high brightness, fast power modulation and high efficiency of diode lasers results in a strong pull of existing markets, but also spurs the development of a wide variety of new applications.

Bactericidal effect of visible light in the presence of erythrosine on Porphyromonas gingivalis and Fusobacterium nucleatum compared with diode laser, an in vitro study.

PubMed

Habiboallah, Ghanbari; Mahdi, Zakeri; Mahbobeh, Naderi Nasab; Mina, Zareian Jahromi; Sina, Faghihi; Majid, Zakeri

2014-12-27

Recently, photodynamic therapy (PDT) has been introduced as a new modality in oral bacterial decontamination. Besides, the ability of laser irradiation in the presence of photosensitizing agent to lethal effect on oral bacteria is well documented. Current research aims to evaluate the effect of photodynamic killing of visible blue light in the presence of plaque disclosing agent erythrosine as photosensitizer on Porphyromonas gingivalis associated with periodontal bone loss and Fusobacterium nucleatum associated with soft tissue inflammation, comparing with the near-infrared diode laser. Standard suspension of P. gingivalis and F. nucleatum were exposed to Light Emitting Diode (LED) (440-480 nm) used to photopolymerize composite resine dental restoration in combination with erythrosine (22 µm) up to 5 minutes. Bacterial sample were also exposed to a near-infrared diode laser (wavelength, 830 nm), using identical irradiation parameters for comparison. Bacterial samples from each treatment groups (radiation-only group, erythrosine-only group and light or laser with erythrosine group) were subcultured onto the surface of agar plates. Survival of these bacteria was determined by counting the number of colony forming units (CFU) after incubation. Exposure to visible blue light and diode laser in conjugation with erythrosine significantly reduced both species examined viability, whereas erythrosine-treated samples exposed to visible light suggested a statically meaningful differences comparing to diode laser. In addition, bactericidal effect of visible light or diode laser alone on P. gingivalis as black-pigmented bacteria possess endogenous porphyrins was noticeably. Our result suggested that visible blue light source in the presence of plaque disclosing agent erythrosine could can be consider as potential approach of PDT to kill the main gram-negative periodontal pathogens. From a clinical standpoint, this regimen could be established as an additional minimally invasive antibacterial treatment of plaque induced periodontal pathologies.

Design of high breakdown voltage vertical GaN p-n diodes with high-K/low-K compound dielectric structure for power electronics applications

NASA Astrophysics Data System (ADS)

Du, Jiangfeng; Li, Zhenchao; Liu, Dong; Bai, Zhiyuan; Liu, Yang; Yu, Qi

2017-11-01

In this work, a vertical GaN p-n diode with a high-K/low-K compound dielectric structure (GaN CD-VGD) is proposed and designed to achieve a record high breakdown voltage (BV) with a low specific on-resistance (Ron,sp). By introducing compound dielectric structure, the electric field near the p-n junction interface is suppressed due to the effects of high-K passivation layer, and a new electric field peak is induced into the n-type drift region, because of a discontinuity of electrical field at the interface of high-K and low-K layer. Therefore the distribution of electric field in GaN p-n diode becomes more uniform and an enhancement of breakdown voltage can be achieved. Numerical simulations demonstrate that GaN CD-VGD with a BV of 10650 V and a Ron,sp of 14.3 mΩ cm2, resulting in a record high figure-of-merit of 8 GW/cm2.

Human papilloma virus lesions of the oral cavity: healing and relapse after treatment with 810-980 nm diode laser.

PubMed

Angiero, Francesca; Buccianti, Alberto; Parma, Luisa; Crippa, Rolando

2015-02-01

This study evaluated the therapeutic efficacy of laser therapy in treating oral human papilloma virus (HPV) lesions. In particular, mode of action, healing, postoperative patient compliance, visual numeric scale (VNS) pain index, and recurrence were analyzed. During 2001-2012, in 170 patients (80 women and 90 men), 174 intraoral and lip HPV lesions were detected and excised by diode laser of different wavelengths (810-980 nm), with an average power of 2.1 W, in continuous wave mode, using 300 to 320 μm optical fibers. In most cases (95.4%), complete healing occurred in the first 30 days. There were no adverse effects and all patients were carefully followed up until complete healing occurred, documenting any complications. There was only one recurrence, which was later treated successfully; the mean VNS pain score was below one. In treating HPV lesions, the diode laser is not only a valuable tool for their eradication but especially it reduces relapses, thanks to the characteristics of the laser light.

Carbon Nanotube Self-Gating Diode and Application in Integrated Circuits.

PubMed

Si, Jia; Liu, Lijun; Wang, Fanglin; Zhang, Zhiyong; Peng, Lian-Mao

2016-07-26

A nano self-gating diode (SGD) based on nanoscale semiconducting material is proposed, simulated, and realized on semiconducting carbon nanotubes (CNTs) through a doping-free fabrication process. The relationships between the performance and material/structural parameters of the SGD are explored through numerical simulation and verified by experiment results. Based on these results, performance optimization strategy is outlined, and high performance CNT SGDs are fabricated and demonstrated to surpass other published CNT diodes. In particular the CNT SGD exhibits high rectifier factor of up to 1.4 × 10(6) while retains large on-state current. Benefiting from high yield and stability, CNT SGDs are used for constructing logic and analog integrated circuits. Two kinds of basic digital gates (AND and OR) have been realized on chip through using CNT SGDs and on-chip Ti wire resistances, and a full wave rectifier circuit has been demonstrated through using two CNT SGDs. Although demonstrated here using CNT SGDs, this device structure may in principle be implemented using other semiconducting nanomaterials, to provide ideas and building blocks for electronic applications based on nanoscale materials.

Transition times between the extremum points of the current–voltage characteristic of a resonant tunneling diode with hysteresis

DOE Office of Scientific and Technical Information (OSTI.GOV)

Grishakov, K. S., E-mail: ksgrishakov@yahoo.com; Elesin, V. F.

A numerical solution to the problem of transient processes in a resonant tunneling diode featuring a current–voltage characteristic with hysteresis is found for the first time in the context of a coherent model (based on the coupled Schrödinger and Poisson equations) taking into account the Fermi distribution of electrons. The transitions from the high-current to the low-current state and vice versa, which result from the existence of hysteresis and are of great practical importance for ultrafast switches based on resonant tunneling diodes, are studied in detail. It is shown that the transition times for such processes initiated by the applicationmore » of a small voltage can significantly exceed the characteristic time ℏ/Γ (where G is the width of the resonance level). It is established for the first time that the transition time can be reduced and made as short as the characteristic time ℏ/Γ by applying a sufficiently high voltage. For the parameters of the resonant-tunnelingdiode structure considered in this study, the required voltage is about 0.01 V.« less

Design of a broadband reciprocal optical diode in multimode silicon waveguide by partial depth etching

NASA Astrophysics Data System (ADS)

Zhu, Danfeng; Zhang, Jinqiannan; Ye, Han; Yu, Zhongyuan; Liu, Yumin

2018-07-01

We propose a design of reciprocal optical diode based on asymmetric spatial mode conversion in multimode silicon waveguide on the silicon-on-insulator platform. The design possesses large bandwidth, high contrast ratio and high fabrication tolerance. The forward even-to-odd mode conversion and backward blockade of even mode are achieved by partial depth etching in the functional region. Simulated by three-dimension finite-difference time-domain method, the forward transmission efficiency is about -2.05 dB while the backward transmission efficiency is only -22.68 dB, reaching a highest contrast ratio of 0.983 at the wavelength of 1550 nm. The operational bandwidth is up to 200 nm (from 1450 nm to 1650 nm) with contrast ratio higher than 0.911. The numerical analysis also demonstrates that the proposed optical diode possesses high tolerance for geometry parameter errors which may be introduced in fabrication. The design based on partial depth etching is compatible with CMOS process and is expected to contribute to the silicon-based all-optical circuits.

Patient perceptions and clinical efficacy of labial frenectomies using diode laser versus conventional techniques.

PubMed

Uraz, A; Çetiner, F D; Cula, S; Guler, B; Oztoprak, S

2018-06-01

The aim of present study was to compare the keratinized gingival tissue measurements, degree of subjective complaints and functional complications of using an 980nm diode laser versus a scalpel for labial frenectomies. Thirty-six patients requiring labial frenectomies, between 14 and 51 years old, were randomly assigned to either scalpel or diode laser treatments. The soft tissue measurements, including the keratinized gingiva width (KGW), attached gingiva width (AGW) and attached gingiva thickness (AGT), were recorded before surgery, immediately after, one week later and one, three and six months after surgery. In addition, the functional complications and the morbidity (level of pain, swelling and redness) were evaluated during the first postoperative week using a visual analog scale (VAS). We determined statistically significant gains in the KGW, AGW and AGT after surgery in both groups; however, there was no significant difference between the study groups. The VAS scores indicated that the patients treated with a diode laser had less discomfort and functional complications compare with scalpel surgery. The results described above show that diode laser surgery offers a safe, impressive alternative for labial frenectomies that are comfortable for the patients. Copyright © 2018 Elsevier Masson SAS. All rights reserved.

Diode Laser for Laryngeal Surgery: a Systematic Review.

PubMed

Arroyo, Helena Hotz; Neri, Larissa; Fussuma, Carina Yuri; Imamura, Rui

2016-04-01

Introduction The diode laser has been frequently used in the management of laryngeal disorders. The portability and functional diversity of this tool make it a reasonable alternative to conventional lasers. However, whether diode laser has been applied in transoral laser microsurgery, the ideal parameters, outcomes, and adverse effects remain unclear. Objective The main objective of this systematic review is to provide a reliable evaluation of the use of diode laser in laryngeal diseases, trying to clarify its ideal parameters in the larynx, as well as its outcomes and complications. Data Synthesis We included eleven studies in the final analysis. From the included articles, we collected data on patient and lesion characteristics, treatment (diode laser's parameters used in surgery), and outcomes related to the laser surgery performed. Only two studies were prospective and there were no randomized controlled trials. Most of the evidence suggests that the diode laser can be a useful tool for treatment of different pathologies in the larynx. In this sense, the parameters must be set depending on the goal (vaporization, section, or coagulation) and the clinical problem. The literature lacks studies on the ideal parameters of the diode laser in laryngeal surgery. The available data indicate that diode laser is a useful tool that should be considered in laryngeal surgeries. Thus, large, well-designed studies correlated with diode compared with other lasers are needed to better estimate its effects.

Diode Laser for Laryngeal Surgery: a Systematic Review

PubMed Central

Arroyo, Helena Hotz; Neri, Larissa; Fussuma, Carina Yuri; Imamura, Rui

2016-01-01

Introduction The diode laser has been frequently used in the management of laryngeal disorders. The portability and functional diversity of this tool make it a reasonable alternative to conventional lasers. However, whether diode laser has been applied in transoral laser microsurgery, the ideal parameters, outcomes, and adverse effects remain unclear. Objective The main objective of this systematic review is to provide a reliable evaluation of the use of diode laser in laryngeal diseases, trying to clarify its ideal parameters in the larynx, as well as its outcomes and complications. Data Synthesis We included eleven studies in the final analysis. From the included articles, we collected data on patient and lesion characteristics, treatment (diode laser's parameters used in surgery), and outcomes related to the laser surgery performed. Only two studies were prospective and there were no randomized controlled trials. Most of the evidence suggests that the diode laser can be a useful tool for treatment of different pathologies in the larynx. In this sense, the parameters must be set depending on the goal (vaporization, section, or coagulation) and the clinical problem. Conclusion: The literature lacks studies on the ideal parameters of the diode laser in laryngeal surgery. The available data indicate that diode laser is a useful tool that should be considered in laryngeal surgeries. Thus, large, well-designed studies correlated with diode compared with other lasers are needed to better estimate its effects. PMID:27096024

Improving Reliability of High Power Quasi-CW Laser Diode Arrays for Pumping Solid State Lasers

NASA Technical Reports Server (NTRS)

Amzajerdian, Farzin; Meadows, Byron L.; Baker, Nathaniel R.; Barnes, Bruce W.; Baggott, Renee S.; Lockard, George E.; Singh, Upendra N.; Kavaya, Michael J.

2005-01-01

Most Lidar applications rely on moderate to high power solid state lasers to generate the required transmitted pulses. However, the reliability of solid state lasers, which can operate autonomously over long periods, is constrained by their laser diode pump arrays. Thermal cycling of the active regions is considered the primary reason for rapid degradation of the quasi-CW high power laser diode arrays, and the excessive temperature rise is the leading suspect in premature failure. The thermal issues of laser diode arrays are even more drastic for 2-micron solid state lasers which require considerably longer pump pulses compared to the more commonly used pump arrays for 1-micron lasers. This paper describes several advanced packaging techniques being employed for more efficient heat removal from the active regions of the laser diode bars. Experimental results for several high power laser diode array devices will be reported and their performance when operated at long pulsewidths of about 1msec will be described.

Improved ultraviolet emission performance from polarization-engineered n-ZnO/p-GaN heterojunction diode

NASA Astrophysics Data System (ADS)

Jiang, Junyan; Zhang, Yuantao; Chi, Chen; Shi, Zhifeng; Yan, Long; Li, Pengchong; Zhang, Baolin; Du, Guotong

2016-02-01

O-polar ZnO films were grown on N-polar p-GaN/sapphire substrates by photo-assisted metal-organic chemical vapor deposition, and further heterojunction light-emitting diodes based O-polar n-ZnO/N-polar p-GaN were proposed and fabricated. It is experimentally demonstrated that the interface polarization of O-polar n-ZnO/N-polar p-GaN heterojunction can shift the location of the depletion region from the interface deep into the ZnO side. When a forward bias is applied to the proposed diode, a strong and high-purity ultraviolet emission located at 385 nm can be observed. Compared with conventional Zn-polar n-ZnO/Ga-polar p-GaN heterostructure diode, the ultraviolet emission intensity of the proposed heterojunction diode is greatly enhanced due to the presence of polarization-induced inversion layer at the ZnO side of the heterojunction interface. This work provides an innovative path for the design and development of ZnO-based ultraviolet diode.

A 17 GHz molecular rectifier

PubMed Central

Trasobares, J.; Vuillaume, D.; Théron, D.; Clément, N.

2016-01-01

Molecular electronics originally proposed that small molecules sandwiched between electrodes would accomplish electronic functions and enable ultimate scaling to be reached. However, so far, functional molecular devices have only been demonstrated at low frequency. Here, we demonstrate molecular diodes operating up to 17.8 GHz. Direct current and radio frequency (RF) properties were simultaneously measured on a large array of molecular junctions composed of gold nanocrystal electrodes, ferrocenyl undecanethiol molecules and the tip of an interferometric scanning microwave microscope. The present nanometre-scale molecular diodes offer a current density increase by several orders of magnitude compared with that of micrometre-scale molecular diodes, allowing RF operation. The measured S11 parameters show a diode rectification ratio of 12 dB which is linked to the rectification behaviour of the direct current conductance. From the RF measurements, we extrapolate a cut-off frequency of 520 GHz. A comparison with the silicon RF-Schottky diodes, architecture suggests that the RF-molecular diodes are extremely attractive for scaling and high-frequency operation. PMID:27694833

Characterization and Modeling Analysis for Metal-Semiconductor-Metal GaAs Diodes with Pd/SiO2 Mixture Electrode

PubMed Central

Tan, Shih-Wei; Lai, Shih-Wen

2012-01-01

Characterization and modeling of metal-semiconductor-metal (MSM) GaAs diodes using to evaporate SiO2 and Pd simultaneously as a mixture electrode (called M-MSM diodes) compared with similar to evaporate Pd as the electrode (called Pd-MSM diodes) were reported. The barrier height (φ b) and the Richardson constant (A*) were carried out for the thermionic-emission process to describe well the current transport for Pd-MSM diodes in the consideration of the carrier over the metal-semiconductor barrier. In addition, in the consideration of the carrier over both the metal-semiconductor barrier and the insulator-semiconductor barrier simultaneously, thus the thermionic-emission process can be used to describe well the current transport for M-MSM diodes. Furthermore, in the higher applied voltage, the carrier recombination will be taken into discussion. Besides, a composite-current (CC) model is developed to evidence the concepts. Our calculated results are in good agreement with the experimental ones. PMID:23226352

Comparison of Three E-Beam Techniques for Electric Field Imaging and Carrier Diffusion Length Measurement on the Same Nanowires.

PubMed

Donatini, F; de Luna Bugallo, Andres; Tchoulfian, Pierre; Chicot, Gauthier; Sartel, Corinne; Sallet, Vincent; Pernot, Julien

2016-05-11

Whereas nanowire (NW)-based devices offer numerous advantages compared to bulk ones, their performances are frequently limited by an incomplete understanding of their properties where surface effect should be carefully considered. Here, we demonstrate the ability to spatially map the electric field and determine the exciton diffusion length in NW by using an electron beam as the single excitation source. This approach is performed on numerous single ZnO NW Schottky diodes whose NW radius vary from 42.5 to 175 nm. The dominant impact of the surface on the NW properties is revealed through the comparison of three different physical quantities recorded on the same NW: electron-beam induced current, cathodoluminescence, and secondary electron signal. Indeed, the space charge region near the Schottky contact exhibits an unusual linear variation with reverse bias whatever the NW radius. On the contrary, the exciton diffusion length is shown to be controlled by the NW radius through surface recombination. This systematic comparison performed on a single ZnO NW demonstrates the power of these complementary techniques in understanding NW properties.

The role of helium metastable states in radio-frequency driven helium-oxygen atmospheric pressure plasma jets: measurement and numerical simulation

NASA Astrophysics Data System (ADS)

Niemi, K.; Waskoenig, J.; Sadeghi, N.; Gans, T.; O'Connell, D.

2011-10-01

Absolute densities of metastable He(23S1) atoms were measured line-of-sight integrated along the discharge channel of a capacitively coupled radio-frequency driven atmospheric pressure plasma jet operated in technologically relevant helium-oxygen mixtures by tunable diode-laser absorption spectroscopy. The dependences of the He(23S1) density in the homogeneous-glow-like α-mode plasma with oxygen admixtures up to 1% were investigated. The results are compared with a one-dimensional numerical simulation, which includes a semi-kinetical treatment of the pronounced electron dynamics and the complex plasma chemistry (in total 20 species and 184 reactions). Very good agreement between measurement and simulation is found. The main formation mechanisms for metastable helium atoms are identified and analyzed, including their pronounced spatio-temporal dynamics. Penning ionization through helium metastables is found to be significant for plasma sustainment, while it is revealed that helium metastables are not an important energy carrying species into the jet effluent and therefore will not play a direct role in remote surface treatments.

Characterization of diode-laser stacks for high-energy-class solid state lasers

NASA Astrophysics Data System (ADS)

Pilar, Jan; Sikocinski, Pawel; Pranowicz, Alina; Divoky, Martin; Crump, P.; Staske, R.; Lucianetti, Antonio; Mocek, Tomas

2014-03-01

In this work, we present a comparative study of high power diode stacks produced by world's leading manufacturers such as DILAS, Jenoptik, and Quantel. The diode-laser stacks are characterized by central wavelength around 939 nm, duty cycle of 1 %, and maximum repetition rate of 10 Hz. The characterization includes peak power, electrical-to-optical efficiency, central wavelength and full width at half maximum (FWHM) as a function of diode current and cooling temperature. A cross-check of measurements performed at HiLASE-IoP and Ferdinand-Braun-Institut (FBH) shows very good agreement between the results. Our study reveals also the presence of discontinuities in the spectra of two diode stacks. We consider the results presented here a valuable tool to optimize pump sources for ultra-high average power lasers, including laser fusion facilities.

Long-term efficacy of linear-scanning 808 nm diode laser for hair removal compared to a scanned alexandrite laser.

PubMed

Grunewald, Sonja; Bodendorf, Marc Oliver; Zygouris, Alexander; Simon, Jan Christoph; Paasch, Uwe

2014-01-01

Alexandrite and diode lasers are commonly used for hair removal. To date, the available spot sizes and repetition rates are defining factors in terms of penetration depth, treatment speed, and efficacy. Still, larger treatment areas and faster systems are desirable. To compare the efficacy, tolerability, and subject satisfaction of a continuously linear-scanning 808 nm diode laser with an alexandrite 755 nm laser for axillary hair removal. A total of 31 adults with skin types I-IV received 6 treatments at 4-week intervals with a 755 nm alexandrite laser (right axilla) and a continuously linear-scanning 808 nm diode laser (left axilla). Axillary hair density was assessed using a computerized hair detection system. There was a significant reduction in axillary hair after the 6th treatment (P < 0.05) on both sides (left, 808 nm: hair clearance of 72.16%; right, 755 nm: hair clearance of 71.30%). The difference in reduction between the two lasers was not significant, but both were persistant at 18 months follow-up (left: hair clearance of 73.71%; right: hair clearance of 71.90%). Erythema and perifollicular edema were more common after alexandrite laser treatment, but all side effects were transient. While 62.50% of patients reported more pain in response to treatment with the new diode laser, all patients rated treatment with either laser tolerable. Treatment with either the alexandrite or the linear-scanning diode laser results in significant, comparable, persistent (at least 18 months) axillary hair reduction among individuals with skin types I-IV. © 2013 Wiley Periodicals, Inc.

Design and experimental testing of air slab caps which convert commercial electron diodes into dual purpose, correction-free diodes for small field dosimetry.

PubMed

Charles, P H; Cranmer-Sargison, G; Thwaites, D I; Kairn, T; Crowe, S B; Pedrazzini, G; Aland, T; Kenny, J; Langton, C M; Trapp, J V

2014-10-01

Two diodes which do not require correction factors for small field relative output measurements are designed and validated using experimental methodology. This was achieved by adding an air layer above the active volume of the diode detectors, which canceled out the increase in response of the diodes in small fields relative to standard field sizes. Due to the increased density of silicon and other components within a diode, additional electrons are created. In very small fields, a very small air gap acts as an effective filter of electrons with a high angle of incidence. The aim was to design a diode that balanced these perturbations to give a response similar to a water-only geometry. Three thicknesses of air were placed at the proximal end of a PTW 60017 electron diode (PTWe) using an adjustable "air cap". A set of output ratios (ORDet (fclin) ) for square field sizes of side length down to 5 mm was measured using each air thickness and compared to ORDet (fclin) measured using an IBA stereotactic field diode (SFD). kQclin,Qmsr (fclin,fmsr) was transferred from the SFD to the PTWe diode and plotted as a function of air gap thickness for each field size. This enabled the optimal air gap thickness to be obtained by observing which thickness of air was required such that kQclin,Qmsr (fclin,fmsr) was equal to 1.00 at all field sizes. A similar procedure was used to find the optimal air thickness required to make a modified Sun Nuclear EDGE detector (EDGEe) which is "correction-free" in small field relative dosimetry. In addition, the feasibility of experimentally transferring kQclin,Qmsr (fclin,fmsr) values from the SFD to unknown diodes was tested by comparing the experimentally transferred kQclin,Qmsr (fclin,fmsr) values for unmodified PTWe and EDGEe diodes to Monte Carlo simulated values. 1.0 mm of air was required to make the PTWe diode correction-free. This modified diode (PTWeair) produced output factors equivalent to those in water at all field sizes (5-50 mm). The optimal air thickness required for the EDGEe diode was found to be 0.6 mm. The modified diode (EDGEeair) produced output factors equivalent to those in water, except at field sizes of 8 and 10 mm where it measured approximately 2% greater than the relative dose to water. The experimentally calculated kQclin,Qmsr (fclin,fmsr) for both the PTWe and the EDGEe diodes (without air) matched Monte Carlo simulated results, thus proving that it is feasible to transfer kQclin,Qmsr (fclin,fmsr) from one commercially available detector to another using experimental methods and the recommended experimental setup. It is possible to create a diode which does not require corrections for small field output factor measurements. This has been performed and verified experimentally. The ability of a detector to be "correction-free" depends strongly on its design and composition. A nonwater-equivalent detector can only be "correction-free" if competing perturbations of the beam cancel out at all field sizes. This should not be confused with true water equivalency of a detector.

A two-stage series diode for intense large-area moderate pulsed X rays production.

PubMed

Lai, Dingguo; Qiu, Mengtong; Xu, Qifu; Su, Zhaofeng; Li, Mo; Ren, Shuqing; Huang, Zhongliang

2017-01-01

This paper presents a method for moderate pulsed X rays produced by a series diode, which can be driven by high voltage pulse to generate intense large-area uniform sub-100-keV X rays. A two stage series diode was designed for Flash-II accelerator and experimentally investigated. A compact support system of floating converter/cathode was invented, the extra cathode is floating electrically and mechanically, by withdrawing three support pins several milliseconds before a diode electrical pulse. A double ring cathode was developed to improve the surface electric field and emission stability. The cathode radii and diode separation gap were optimized to enhance the uniformity of X rays and coincidence of the two diode voltages based on the simulation and theoretical calculation. The experimental results show that the two stage series diode can work stably under 700 kV and 300 kA, the average energy of X rays is 86 keV, and the dose is about 296 rad(Si) over 615 cm 2 area with uniformity 2:1 at 5 cm from the last converter. Compared with the single diode, the average X rays' energy reduces from 132 keV to 88 keV, and the proportion of sub-100-keV photons increases from 39% to 69%.

A study on the steady-state solutions of a Bursian diode in the presence of transverse magnetic field, when the electrons of the injected beam are turned back partially or totally

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pramanik, Sourav; Chakrabarti, Nikhil; Kuznetsov, V. I.

2015-11-15

The properties of a steady-state planar vacuum diode driven by a cold electron beam have been investigated in the presence of an external transverse magnetic field, employing both the Eulerian and the Lagrangian formalism. With the help of a numerical scheme, the features of the steady-state solutions have been explored in the Eulerian frame, particularly for the case that corresponds to the potential distributions with a virtual cathode. However, exact analytical formulae for the potential and velocity profiles within the inter-electrode region have been derived with the Lagrangian description. In contrast to the previous work [Phys. Plasmas 22, 042110 (2015)],more » here we have emphasized the situation when electrons are reflected back to the emitter by the magnetic field. Both partial and complete reflection of the electrons due to the magnetic field have been taken into account. Using the emitter electric field as a characteristic parameter, steady-state solutions have been evaluated for specific values of diode length, applied voltage, and magnetic field strength. It has been shown that, due to the inclusion of the magnetic field, a new region of non-unique solutions appears. An external magnetic field seems to have a profound effect in controlling fast electronic switches based on the Bursian diode.« less

Self-Pinched Transport Theory for the SABRE Ion Diode

NASA Astrophysics Data System (ADS)

Welch, Dale R.; Olson, Craig L.; Hanson, David L.

1997-05-01

In anticipation of a 90 kA 4 MV SABRE ion diode experiment, we have been examining self-pinch transport of ions for application to ion-driven inertial confinement fusion. The Li^+3 beam will exit the diode with a 30-40 mradian divergence and a shallow focusing angle of 75 mradians. The beam is annular with an 4.6-cm inner radius and a 6.8-cm outer radius. Self-pinch theory and simulation predict that large residual currents are possible in 2-20 mtorr argon gas. The simulations suggest that ≈ 50 kA of Li particle current is necessary to contain the beam's transverse momentum. Some non-ideal effects include large beam divergence, large focusing angle and beam annularity. To address these problems, we have been studying the benefits of beam conditioning in the focus region between the diode and the self pinch region after the beam has reached a small radius. We have found some benefit from including a passive conical structure and a low-pressure gas. A significant lens effect can be attained using only the beam fields in vacuum or a low pressure gas. In this configuration, a large focusing force, that keeps the ions off an inner cone and outer wall as the beam converges, has been calculated using the numerical simulation code uc(iprop.) Results from integrated simulation of the condition cell and self-pinch region look encouraging.

Water Vapor Sensors Go Sky-High to Assure Aircraft Safety

NASA Technical Reports Server (NTRS)

2006-01-01

JPL used a special tunable diode laser, which NASA scientists could tune to different wavelengths, like a radio being tuned to different frequencies, to accurately target specific molecules and detect small traces of gas. This tunable diode laser was designed to emit near-infrared light at wavelengths absorbed by the gas or gases being detected. The light energy being absorbed by the target gas is related to the molecules present. This is usually measured in parts per million or parts per billion. Multiple measurements are made every second, making the system quick to respond to variations in the target gas. NASA scientists developed this technology as part of the 1999 Mars Polar Lander mission to explore the possibility of life-giving elements on Mars. NASA has since used the tunable diode laser-based gas sensor on aircraft and on balloons to successfully study weather and climate, global warming, emissions from aircraft, and numerous other areas where chemical gas analysis is needed. SpectraSensors, Inc., was formed in 1999 as a spinoff company of JPL, to commercialize tunable diode laser-based analyzers for industrial gas-sensing applications (Spinoff 2000). Now, the San Dimas, California-based firm has come back to the market with a new product featuring the NASA-developed instrument for atmospheric monitoring. This instrument is now helping aircraft avoid hazardous weather conditions and enabling the National Weather Service to provide more accurate weather forecasts.

Low-cost 420nm blue laser diode for tissue cutting and hemostasis

NASA Astrophysics Data System (ADS)

Linden, Kurt J.

2016-03-01

This paper describes the use of a 420 nm blue laser diode for possible surgery and hemostasis. The optical absorption of blood-containing tissue is strongly determined by the absorption characteristics of blood. Blood is primarily comprised of plasma (yellowish extracellular fluid that is approximately 95% water by volume) and formed elements: red blood cells (RBCs), white blood cells (WBCs) and platelets. The RBCs (hemoglobin) are the most numerous, and due to the spectral absorption characteristics of hemoglobin, the optical absorption of blood has a strong relative maximum value in the 420 nm blue region of the optical spectrum. Small, low-cost laser diodes emitting at 420 nm with tens of watts of continuous wave (CW) optical power are becoming commercially available. Experiments on the use of such laser diodes for tissue cutting with simultaneous hemostasis were carried out and are here described. It was found that 1 mm deep x 1 mm wide cuts can be achieved in red meat at a focused laser power level of 3 W moving at a velocity of ~ 1 mm/s. The peripheral necrosis and thermal damage zone extended over a width of approximately 0.5 mm adjacent to the cuts. Preliminary hemostasis experiments were carried out with fresh equine blood in Tygon tubing, where it was demonstrated that cauterization can occur in regions of intentional partial tubing puncture.

Fabrication and electrical characterizations of graphene nanocomposite thin film based heterojunction diode

NASA Astrophysics Data System (ADS)

Rahim, Ishrat; Shah, Mutabar; Iqbal, Mahmood; Wahab, Fazal; Khan, Afzal; Khan, Shah Haider

2017-11-01

The use of graphene in electronic devices is becoming attractive due to its inherent scalability and is thus well suited for flexible electronic devices. Here we present the electrical characterization of heterojunction diode, based on the nanocomposite of graphene (G) with silver nanoparticles (Ag NPs), at room temperature. The diode was fabricated by depositing nanocomposite on the n-Si substrate. The current - voltage (I - V) characteristic of the fabricated junction shows rectifying behavior similar to a Schottky junction. The junction parameters such as ideality factor (n), series resistance (Rs), and barrier height (ϕb) has been extracted, using various methods, from the experimentally obtained I - V data. The measured values of n, Rs and ϕb are 3.86, 45 Ω and 0.367 eV, respectively, as calculated from the I - V curve. The numerical values of these parameters calculated by different methods are in good agreement with each other showing the consistency of the applied calculating techniques. The conduction mechanism of the fabricated diode seems to have been dominated by the Trap Charge Limited Conduction (TCLC) behavior. The energy distribution of interface states density determined from forward bias I - V characteristic shows an exponential decrease with bias from 27 × 1013 cm-2 eV-1 at (Ec - 0.345) eV to 3 × 1013 cm-2 eV-1at (Ec - 0.398) eV.

Experimental effective intensity of steady and flashing light emitting diodes for aircraft anti-collision lighting.

DOT National Transportation Integrated Search

2013-08-01

Research was conducted to determine the effective intensity of flashing lights that incorporate light-emitting diodes (LEDs). LEDs require less power and have the ability to flash without the addition of moving parts. Compared with incandescent bulbs...

Evidence of low injection efficiency for implanted p-emitters in bipolar 4H-SiC high-voltage diodes

NASA Astrophysics Data System (ADS)

Matthus, Christian D.; Huerner, Andreas; Erlbacher, Tobias; Bauer, Anton J.; Frey, Lothar

2018-06-01

In this study, the influence of the emitter efficiency on the forward current-voltage characteristics, especially the conductivity modulation of bipolar SiC-diodes was analyzed. It was determined that the emitter efficiency of p-emitters formed by ion implantation is significantly lower compared to p-emitters formed by epitaxy. In contrast to comparable studies, experimental approach was arranged that the influence of the quality of the drift-layer or the thickness of the emitter on the conductivity modulation could be excluded for the fabricated bipolar SiC-diodes of this work. Thus, it can be established that the lower emitter injection efficiency is mainly caused by the reduced electron lifetime in p-emitters formed by ion implantation. Therefore, a significant enhancement of the electron lifetime in implanted p-emitters is mandatory for e.g. SiC-MPS-diodes where the functionality of the devices depends significantly on the injection efficiency.

Radiative flux from a planar multiple point source within a cylindrical enclosure reaching a coaxial circular plane

NASA Astrophysics Data System (ADS)

Tryka, Stanislaw

2007-04-01

A general formula and some special integral formulas were presented for calculating radiative fluxes incident on a circular plane from a planar multiple point source within a coaxial cylindrical enclosure perpendicular to the source. These formula were obtained for radiation propagating in a homogeneous isotropic medium assuming that the lateral surface of the enclosure completely absorbs the incident radiation. Exemplary results were computed numerically and illustrated with three-dimensional surface plots. The formulas presented are suitable for determining fluxes of radiation reaching planar circular detectors, collectors or other planar circular elements from systems of laser diodes, light emitting diodes and fiber lamps within cylindrical enclosures, as well as small biological emitters (bacteria, fungi, yeast, etc.) distributed on planar bases of open nontransparent cylindrical containers.

Enhancing the performance of blue GaN-based light emitting diodes with double electron blocking layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Guo, Yao; Liang, Meng; Fu, Jiajia

2015-03-15

In this work, novel double Electron Blocking Layers for InGaN/GaN multiple quantum wells light-emitting diodes were proposed to mitigate the efficiency droop at high current density. The band diagram and carriers distributions were investigated numerically. The results indicate that due to a newly formed holes stack in the p-GaN near the active region, the hole injection has been improved and an uniform carriers distribution can be achieved. As a result, in our new structure with double Electron Blocking Layers, the efficiency droop has been reduced to 15.5 % in comparison with 57.3 % for the LED with AlGaN EBL atmore » the current density of 100 A/cm{sup 2}.« less

Design of 150W, 105-μm, 0.22NA, fiber coupled laser diode module by ZEMAX

NASA Astrophysics Data System (ADS)

Qi, Yunfei; Zhao, Pengfei; Chen, Qing; Wu, Yulong; Chen, Yongqi; Zou, Yonggang; Lin, Xuechun

2016-10-01

We represent a design of a high brightness, fiber coupled diode laser module based on 16 single emitters at 915nm. The module can produce more than 150 Watts output power from a standard fiber with core diameter of 105μm and numerical aperture (NA) of 0.22. To achieve a high power and high brightness laser beam, the spatial beam combination and polarization beam combination are used to combine output of 16 single emitters into a single beam, and then an aspheric lens is used to couple the combined beam into an optical fiber. The simulation show that the total coupling efficiency is more than 95% and the highest brightness is estimated to be 11MW/ (cm2*sr).

Pencil-like mm-size electron beams produced with linear inductive voltage adders

NASA Astrophysics Data System (ADS)

Mazarakis, M. G.; Poukey, J. W.; Rovang, D. C.; Maenchen, J. E.; Cordova, S. R.; Menge, P. R.; Pepping, R.; Bennett, L.; Mikkelson, K.; Smith, D. L.; Halbleib, J.; Stygar, W. A.; Welch, D. R.

1997-02-01

We present the design, analysis, and results of the high brightness electron beam experiments currently under investigation at Sandia National Laboratories. The anticipated beam parameters are the following: energy 12 MeV, current 35-40 kA, rms radius 0.5 mm, and pulse duration 40 ns full width at half-maximum. The accelerator is SABRE, a pulsed linear inductive voltage adder modified to higher impedance, and the electron source is a magnetically immersed foilless electron diode. 20-30 T solenoidal magnets are required to insulate the diode and contain the beam to its extremely small-sized (1 mm) envelope. These experiments are designed to push the technology to produce the highest possible electron current in a submillimeter radius beam. Design, numerical simulations, and experimental results are presented.

A new analytical compact model for two-dimensional finger photodiodes

NASA Astrophysics Data System (ADS)

Naeve, T.; Hohenbild, M.; Seegebrecht, P.

2008-02-01

A new physically based circuit simulation model for finger photodiodes has been proposed. The approach is based on the solution of transport and continuity equation for generated carriers within the two-dimensional structure. As an example we present results of a diode consisting of N+-fingers located in a P-well on top of a N-type buried layer integrated in a P-type silicon substrate (N+/PW/NBL/Psub finger photodiode). The model is capable to predict the sensitivity of the diode in a wide spectral range very accurately. The structure under consideration was fabricated in an industrial 0.6 μm BiCMOS process. The good agreement of simulated sensitivity data with results of measurements and numerical simulations demonstrate the high quality of our model.

Quantum mechanical modeling the emission pattern and polarization of nanoscale light emitting diodes.

PubMed

Wang, Rulin; Zhang, Yu; Bi, Fuzhen; Frauenheim, Thomas; Chen, GuanHua; Yam, ChiYung

2016-07-21

Understanding of the electroluminescence (EL) mechanism in optoelectronic devices is imperative for further optimization of their efficiency and effectiveness. Here, a quantum mechanical approach is formulated for modeling the EL processes in nanoscale light emitting diodes (LED). Based on non-equilibrium Green's function quantum transport equations, interactions with the electromagnetic vacuum environment are included to describe electrically driven light emission in the devices. The presented framework is illustrated by numerical simulations of a silicon nanowire LED device. EL spectra of the nanowire device under different bias voltages are obtained and, more importantly, the radiation pattern and polarization of optical emission can be determined using the current approach. This work is an important step forward towards atomistic quantum mechanical modeling of the electrically induced optical response in nanoscale systems.

Entrance dose measurements for in‐vivo diode dosimetry: Comparison of correction factors for two types of commercial silicon diode detectors

PubMed Central

Zhu, X. R.

2000-01-01

Silicon diode dosimeters have been used routinely for in‐vivo dosimetry. Despite their popularity, an appropriate implementation of an in‐vivo dosimetry program using diode detectors remains a challenge for clinical physicists. One common approach is to relate the diode readout to the entrance dose, that is, dose to the reference depth of maximum dose such as dmax for the 10×10 cm2 field. Various correction factors are needed in order to properly infer the entrance dose from the diode readout, depending on field sizes, target‐to‐surface distances (TSD), and accessories (such as wedges and compensate filters). In some clinical practices, however, no correction factor is used. In this case, a diode‐dosimeter‐based in‐vivo dosimetry program may not serve the purpose effectively; that is, to provide an overall check of the dosimetry procedure. In this paper, we provide a formula to relate the diode readout to the entrance dose. Correction factors for TSD, field size, and wedges used in this formula are also clearly defined. Two types of commercial diode detectors, ISORAD (n‐type) and the newly available QED (p‐type) (Sun Nuclear Corporation), are studied. We compared correction factors for TSDs, field sizes, and wedges. Our results are consistent with the theory of radiation damage of silicon diodes. Radiation damage has been shown to be more serious for n‐type than for p‐type detectors. In general, both types of diode dosimeters require correction factors depending on beam energy, TSD, field size, and wedge. The magnitudes of corrections for QED (p‐type) diodes are smaller than ISORAD detectors. PACS number(s): 87.66.–a, 87.52.–g PMID:11674824

Building block diode laser concept for high brightness laser output in the kW range and its applications

NASA Astrophysics Data System (ADS)

Ferrario, Fabio; Fritsche, Haro; Grohe, Andreas; Hagen, Thomas; Kern, Holger; Koch, Ralf; Kruschke, Bastian; Reich, Axel; Sanftleben, Dennis; Steger, Ronny; Wallendorf, Till; Gries, Wolfgang

2016-03-01

The modular concept of DirectPhotonics laser systems is a big advantage regarding its manufacturability, serviceability as well as reproducibility. By sticking to identical base components an economic production allows to serve as many applications as possible while keeping the product variations minimal. The modular laser design is based on single emitters and various combining technics. In a first step we accept a reduction of the very high brightness of the single emitters by vertical stacking several diodes in fast axis. This can be theoretically done until the combined fast axis beam quality is on a comparable level as the individual diodes slow axis beam quality without loosing overall beam performance after fiber coupling. Those stacked individual emitters can be wavelength stabilized by an external resonator, providing the very same feedback to each of those laser diodes which leads to an output power of about 100 W with BPP of <3.5 mm*mrad (FA) and <5 mm*mrad (SA). In the next steps, further power scaling is accomplished by polarization and wavelength multiplexing yielding high optical efficiencies of more than 80% and resulting in a building block module with about 500 W launched into a 100 μm fiber with 0.15 NA. Higher power levels can be achieved by stacking those building blocks using the very same dense spectral combing technique up to multi kW Systems without further reduction of the BPP. The 500 W building blocks are consequently designed in a way that they feature a high flexibility with regard to their emitting wavelength bandwidth. Therefore, new wavelengths can be implemented by only exchanging parts and without any additional change of the production process. This design principal theoretically offers the option to adapt the wavelength of those blocks to any applications, from UV, visible into the far IR as long as there are any diodes commercially available. This opens numerous additional applications like laser pumping, scientific applications, materials processing such as cutting and welding of copper aluminum or steel and also medical application. Typical operating at wavelengths in the 9XX nm range, these systems are designed for and mainly used in cutting and welding applications, but adapted wavelength ranges such as 793 nm and 1530 nm are also offered. Around 15XX nm the diodes are already successfully used for resonant pumping of Erbium lasers [1]. Furthermore, the fully integrated electronic concept allows addressing further applications, as due to short lead lengths it is capable of generating very short μs pulses up to cw mode operation by simple software commands.

Thermal characterization of gallium nitride p-i-n diodes

NASA Astrophysics Data System (ADS)

Dallas, J.; Pavlidis, G.; Chatterjee, B.; Lundh, J. S.; Ji, M.; Kim, J.; Kao, T.; Detchprohm, T.; Dupuis, R. D.; Shen, S.; Graham, S.; Choi, S.

2018-02-01

In this study, various thermal characterization techniques and multi-physics modeling were applied to understand the thermal characteristics of GaN vertical and quasi-vertical power diodes. Optical thermography techniques typically used for lateral GaN device temperature assessment including infrared thermography, thermoreflectance thermal imaging, and Raman thermometry were applied to GaN p-i-n diodes to determine if each technique is capable of providing insight into the thermal characteristics of vertical devices. Of these techniques, thermoreflectance thermal imaging and nanoparticle assisted Raman thermometry proved to yield accurate results and are the preferred methods of thermal characterization of vertical GaN diodes. Along with this, steady state and transient thermoreflectance measurements were performed on vertical and quasi-vertical GaN p-i-n diodes employing GaN and Sapphire substrates, respectively. Electro-thermal modeling was performed to validate measurement results and to demonstrate the effect of current crowding on the thermal response of quasi-vertical diodes. In terms of mitigating the self-heating effect, both the steady state and transient measurements demonstrated the superiority of the tested GaN-on-GaN vertical diode compared to the tested GaN-on-Sapphire quasi-vertical structure.

Low absorption loss p-AlGaN superlattice cladding layer for current-injection deep ultraviolet laser diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Martens, M.; Kuhn, C.; Ziffer, E.

2016-04-11

Current injection into AlGaN-based laser diode structures with high aluminum mole fractions for deep ultraviolet emission is investigated. The electrical characteristics of laser diode structures with different p-AlGaN short period superlattice (SPSL) cladding layers with various aluminum mole fractions are compared. The heterostructures contain all elements that are needed for a current-injection laser diode including cladding and waveguide layers as well as an AlGaN quantum well active region emitting near 270 nm. We found that with increasing aluminum content in the p-AlGaN cladding, the diode turn-on voltage increases, while the series resistance slightly decreases. By introducing an SPSL instead of bulkmore » layers, the operating voltage is significantly reduced. A gain guided broad area laser diode structure with transparent p-Al{sub 0.70}Ga{sub 0.30}N waveguide layers and a transparent p-cladding with an average aluminum content of 81% was designed for strong confinement of the transverse optical mode and low optical losses. Using an optimized SPSL, this diode could sustain current densities of more than 4.5 kA/cm{sup 2}.« less

Silicon Carbide Diodes Performance Characterization at High Temperatures

NASA Technical Reports Server (NTRS)

Lebron-Velilla, Ramon C.; Schwarze, Gene E.; Gardner, Brent G.; Adams, Jerry

2004-01-01

NASA Glenn Research center's Electrical Systems Development branch is working to demonstrate and test the advantages of Silicon Carbide (SiC) devices in actual power electronics applications. The first step in this pursuit is to obtain commercially available SiC Schottky diodes and to individually test them under both static and dynamic conditions, and then compare them with current state of the art silicon Schottky and ultra fast p-n diodes of similar voltage and current ratings. This presentation covers the results of electrical tests performed at NASA Glenn. Steady state forward and reverse current-volt (I-V) curves were generated for each device to compare performance and to measure their forward voltage drop at rated current, as well as the reverse leakage current at rated voltage. In addition, the devices were individually connected as freewheeling diodes in a Buck (step down) DC to DC converter to test their reverse recovery characteristics and compare their transient performance in a typical converter application. Both static and transient characterization tests were performed at temperatures ranging from 25 C to 300 C, in order to test and demonstrate the advantages of SiC over Silicon at high temperatures.

Various vibration modes in a silicon ring resonator driven by p–n diode actuators formed in the lateral direction

NASA Astrophysics Data System (ADS)

Tsushima, Takafumi; Asahi, Yoichi; Tanigawa, Hiroshi; Furutsuka, Takashi; Suzuki, Kenichiro

2018-06-01

In this paper, we describe p–n diode actuators that are formed in the lateral direction on resonators. Because previously reported p–n diode actuators, which were driven by a force parallel to the electrostatic force induced in a p–n diode, were fabricated in the perpendicular direction to the surface, the fabrication process to satisfy the requirement of realizing a p–n junction set in the middle of the plate thickness has been difficult. The resonators in this work are driven by p–n diodes formed in the lateral direction, making the process easy. We have fabricated a silicon ring resonator that has in-plane vibration using p–n–p and n–p–n diode actuators formed in the lateral direction. First, we consider a space charge model that can sufficiently accurately describe the force induced in p–n diode actuators and compare it with the capacitance model used in most computer simulations. Then, we show that multiplying the vibration amplitude calculated by computer simulation by the modification coefficient of 4/3 provides the vibration amplitude in the p–n diode actuators. Good agreement of the theory with experimental results of the in-plane vibration measured for silicon ring resonators is obtained. The computer simulation is very useful for evaluating various vibration modes in resonators driven by the p–n diode actuators. The small amplitude of the p–n diode actuator measured in this work is expected to increase greatly with increased doping of the actuator.

The Effect of Diode Laser With Different Parameters on Root Fracture During Irrigation Procedure.

PubMed

Karataş, Ertuğrul; Arslan, Hakan; Topçuoğlu, Hüseyin Sinan; Yılmaz, Cenk Burak; Yeter, Kübra Yesildal; Ayrancı, Leyla Benan

2016-06-01

The aim of this study is to compare the effect of a single diode laser application and agitation of EDTA with diode laser with different parameters at different time intervals on root fracture. Ninety mandibular incisors were instrumented except the negative control group. The specimens were divided randomly into 10 groups according to final irrigation procedure: (G1) non-instrumented; (G2) distilled water; (G3) 15% EDTA; (G4) ultrasonically agitated EDTA; (G5) single 1.5W/100 Hz Diode laser; (G6) single 3W/100 Hz Diode laser; (G7) 1.5W/100 Hz Diode laser agitation of EDTA for 20 s; (G8) 1.5W/100 Hz Diode laser agitation of EDTA for 40 s; (G9) 3W/100 Hz Diode laser agitation of EDTA for 20 s; and (G10) 3W/100 Hz Diode laser agitation of EDTA for 40 s. The specimens were filled, mounted in acrylic resin, and compression strength test was performed on each specimen. Statistical analysis was carried out using one way ANOVA and Tukey's post hoc tests (P = 0.05). The statistical analysis revealed that there were statistically significant differences among the groups (P < 0.05). Laser-agitated irrigation with a 3W/100 Hz Diode laser for both 20 s and 40 s decreased the fracture resistance of teeth. Copyright © 2015 International Center for Artificial Organs and Transplantation and Wiley Periodicals, Inc.

Prostate volume did not affect voiding function improvements in diode laser enucleation of the prostate.

PubMed

Yang, Stephen Shei-Dei; Hsieh, Cheng-Hsing; Chiang, I-Ni; Lin, Chia-Da; Chang, Shang-Jen

2013-03-01

We compared safety and surgical outcomes in patients with different prostate sizes treated with diode laser enucleation of the prostate. From 2008 to 2012 consecutive patients with benign prostatic obstruction undergoing diode laser prostate enucleation at our institution were enrolled for analysis. A single surgeon performed diode laser prostate enucleation with an end firing, continuous wave diode laser (980 nm). Based on preoperative prostate volume on transrectal ultrasound, patients were stratified into 2 groups, including group 1-65 with less than 60 ml and group 2-55 with 60 ml or greater. Baseline and perioperative characteristics, and postoperative surgical outcomes were compared between the 2 groups. A total of 120 men with a mean ± SD age of 70.2 ± 9.0 years were enrolled for analysis. Compared with group 1 patients, those in group 2 had larger mean total prostate volume (85.0 ± 24.6 vs 40.9 ± 10.8 ml), longer mean operative time (117.7 ± 48.2 vs 60.7 ± 25.0 minutes), higher mean retrieved prostate weight (37.3 ± 16.1 vs 12.5 ± 7.3 gm) and a higher mean tissue retrieval ratio (74.4% ± 22.2% vs 58.8% ± 23.2%, p <0.01). There was no significant difference in the postoperative hemoglobin decrease in the 2 groups (median 0.5 vs 0.9 mg/dl, p = 0.11). The rate of temporary postoperative urinary retention after Foley catheter removal was significantly lower in group 2 (15.4% vs 3.6%, p = 0.04). Postoperative improvements in the peak flow rate, post-void residual urine volume and International Prostate Symptom Score were comparable in the 2 groups. Although patients with a larger prostate required significantly longer operative time and laser energy, voiding function improvements and surgical complication rates of diode laser prostate enucleation were comparable in patients with a larger vs smaller prostate. Copyright © 2013 American Urological Association Education and Research, Inc. Published by Elsevier Inc. All rights reserved.

Performance tradeoff between lateral and interdigitated doping patterns for high speed carrier-depletion based silicon modulators.

PubMed

Yu, Hui; Pantouvaki, Marianna; Van Campenhout, Joris; Korn, Dietmar; Komorowska, Katarzyna; Dumon, Pieter; Li, Yanlu; Verheyen, Peter; Absil, Philippe; Alloatti, Luca; Hillerkuss, David; Leuthold, Juerg; Baets, Roel; Bogaerts, Wim

2012-06-04

Carrier-depletion based silicon modulators with lateral and interdigitated PN junctions are compared systematically on the same fabrication platform. The interdigitated diode is shown to outperform the lateral diode in achieving a low VπLπ of 0.62 V∙cm with comparable propagation loss at the expense of a higher depletion capacitance. The low VπLπ of the interdigitated PN junction is employed to demonstrate 10 Gbit/s modulation with 7.5 dB extinction ration from a 500 µm long device whose static insertion loss is 2.8 dB. In addition, up to 40 Gbit/s modulation is demonstrated for a 3 mm long device comprising a lateral diode and a co-designed traveling wave electrode.

n-ZnO/p-GaN heterojunction light-emitting diodes featuring a buried polarization-induced tunneling junction

NASA Astrophysics Data System (ADS)

Li, Ling; Zhang, Yuantao; Yan, Long; Jiang, Junyan; Han, Xu; Deng, Gaoqiang; Chi, Chen; Song, Junfeng

2016-12-01

n-ZnO/p-GaN heterojunction light-emitting diodes with a p-GaN/Al0.1Ga0.9N/n+-GaN polarization-induced tunneling junction (PITJ) were fabricated by metal-organic chemical vapor deposition. An intense and sharp ultraviolet emission centered at ˜396 nm was observed under forward bias. Compared with the n-ZnO/p-GaN reference diode without PITJ, the light intensity of the proposed diode is increased by ˜1.4-folds due to the improved current spreading. More importantly, the studied diode operates continuously for eight hours with the decay of only ˜3.5% under 20 mA, suggesting a remarkable operating stability. The results demonstrate the feasibility of using PITJ as hole injection layer for high-performance ZnO-based light-emitting devices.

Optoelectronic properties of hybrid diodes based on vanadyl-phthalocyanine and zinc oxide

NASA Astrophysics Data System (ADS)

Kiran, M. Raveendra; Ulla, Hidayath; Satyanarayan, M. N.; Umesh, G.

2017-12-01

We report an investigation of the optoelectronic properties of a hybrid p-n diode device fabricated using ZnO film prepared by sol-gel technique on which a VOPc organic film is deposited by vacuum evaporation. The charge transport properties of devices having the configurations ITO/ZnO/Al and ITO/ZnO/VOPc/MoO3/Al were investigated at different annealing temperatures (150 °C, 250 °C, 350 °C and 450 °C) by Impedance Spectroscopy (IS). The structural, morphological, optical and electrical properties were also studied at different annealing temperatures. The parameters related to the ITO/ZnO and ZnO/VOPc interfaces such as ideality factor (n), barrier height (qϕB) and rectification ratio (RR) of the diodes were determined from current density-voltage (J-V) characteristics. IS measurements suggest that the large photocurrent generated is due to the decrease in bulk resistance of the device on account of the generation of electron-hole pairs in the organic active layer when exposed to light. The RR and the photocurrent responsivity (Rph) values obtained from the J-V characteristics compare well with those obtained from the IS measurements. It was observed that the absolute value of Rph (470 mA/W) for the p-n diode with ZnO annealed at 350 °C is high compared to that of diodes with different ZnO annealing temperatures. These values also agree well with the values obtained for p-n diodes of other phthalocyanines. Our studies clearly demonstrate that a p-n diode with ZnO film annealed at 350 °C exhibits much better optoelectronic characteristics on account of increased grain size, improved charge injection due to the reduction of barrier height and hence higher (up to 5 orders) charge carrier mobility.

In Vitro Comparison of the Effects of Diode Laser and CO2 Laser on Topical Fluoride Uptake in Primary Teeth

PubMed Central

Bahrololoomi, Zahra; Sorouri, Milad

2015-01-01

Objectives: Fluoride therapy is important for control and prevention of dental caries. Laser irradiation can increase fluoride uptake especially when combined with topical fluoride application. The objective of this study was to compare the effects of CO2 and diode lasers on enamel fluoride uptake in primary teeth. Materials and Methods: Forty human primary molars were randomly assigned to four groups (n=10). The roots were removed and the crowns were sectioned mesiodistally into buccal and lingual halves as the experimental and control groups. All samples were treated with 5% sodium fluoride (NaF) varnish. The experimental samples in the four groups were irradiated with 5 or 7W diode or 1 or 2W CO2 laser for 15 seconds and were compared with the controls in terms of fluoride uptake, which was determined using an ion selective electrode after acid dissolution of the specimens. Data were analyzed by SPSS version 16 using ANOVA treating the control measurements as covariates. Results: The estimated amount of fluoride uptake was 59.5± 16.31 ppm, 66.5± 14.9 ppm, 78.6± 12.43 ppm and 90.4± 11.51 ppm for 5W and 7 W diode and 1W and 2 W CO2 lasers, respectively, which were significantly greater than the values in the conventional topical fluoridation group (P<0.005). There were no significant differences between 7W diode laser and 1W CO2 laser, 5W and 7W diode laser, or 1W and 2W CO2 laser in this regard. Conclusion: The results showed that enamel surface irradiation by CO2 and diode lasers increases the fluoride uptake. PMID:27123018

In Vitro Comparison of the Effects of Diode Laser and CO2 Laser on Topical Fluoride Uptake in Primary Teeth.

PubMed

Bahrololoomi, Zahra; Fotuhi Ardakani, Faezeh; Sorouri, Milad

2015-08-01

Fluoride therapy is important for control and prevention of dental caries. Laser irradiation can increase fluoride uptake especially when combined with topical fluoride application. The objective of this study was to compare the effects of CO2 and diode lasers on enamel fluoride uptake in primary teeth. Forty human primary molars were randomly assigned to four groups (n=10). The roots were removed and the crowns were sectioned mesiodistally into buccal and lingual halves as the experimental and control groups. All samples were treated with 5% sodium fluoride (NaF) varnish. The experimental samples in the four groups were irradiated with 5 or 7W diode or 1 or 2W CO2 laser for 15 seconds and were compared with the controls in terms of fluoride uptake, which was determined using an ion selective electrode after acid dissolution of the specimens. Data were analyzed by SPSS version 16 using ANOVA treating the control measurements as covariates. The estimated amount of fluoride uptake was 59.5± 16.31 ppm, 66.5± 14.9 ppm, 78.6± 12.43 ppm and 90.4± 11.51 ppm for 5W and 7 W diode and 1W and 2 W CO2 lasers, respectively, which were significantly greater than the values in the conventional topical fluoridation group (P<0.005). There were no significant differences between 7W diode laser and 1W CO2 laser, 5W and 7W diode laser, or 1W and 2W CO2 laser in this regard. The results showed that enamel surface irradiation by CO2 and diode lasers increases the fluoride uptake.

Comparative clinical evaluation of the immediate and late analgesic effect of GaAlAs diode lasers of 830 and 660 nm in the treatment of dentine pain: preliminary results

NASA Astrophysics Data System (ADS)

Ladalardo, Thereza C.; Mangabeira Albernaz, Pedro L.; Brugnera, Aldo, Jr.; Zanin, Fatima A. A.; Siqueira, Jose T.; Pinheiro, Antonio L. B.

2002-06-01

In this comparative clinical study, we aimed at evaluating the immediate and late analgesic effect of GaAlAs diode lasers of 660 nm and 830 nm in treatment of dentine pain. We used GaAlAs diode lasers of 660 nm and 830 nm with 35 mW, continuous wave emission, spot size 1 mm2 and a dosage of 4 joules/cm2 applied to the cervical dentine surface. In total 4 treatment sessions were performed at intervals of 7 days in a period of 4 consecutive weeks. A total of 40 teeth treated were divided into two groups comprising 20 teeth each: one group irradiated with a 660 nm wavelength laser, and the other one with a 830 nm wavelength laser. By means of a quantitative visual analogue scale (V.A.S.), we measured the sensitive responses to cold stimulus pre- treatment, and at a follow-up period of 15 and 30 minutes post-treatment in both groups in order to evaluate the immediate analgesic effect. The late effect was evaluated at a follow-up period of 15 and 30 days. Using the GaAlAs diode laser of 660 nm wavelength resulted in better levels of dentine desensitization, at both immediate and late analgesic effect analysis compared with the use of the GaAlAs diode laser of 830 nm wavelength.

Diode laser (980 nm) vaporization in comparison with transurethral resection of the prostate for benign prostatic hyperplasia: randomized clinical trial with 2-year follow-up.

PubMed

Razzaghi, Mohammad Reza; Mazloomfard, Mohammad Mohsen; Mokhtarpour, Hooman; Moeini, Aida

2014-09-01

To compare outcomes of diode laser vaporization of prostate with transurethral resection of the prostate (TURP) as a gold-standard treatment. A total number of 115 patients with benign prostatic hyperplasia underwent TURP and 980-nm diode vaporization of prostate in a balanced randomization (1:1) from 2010 to 2012 and were followed up for 24 months. Baseline characteristics of the patients, perioperative data, and postoperative outcomes were compared. The primary end point of the study was assessing the values of International Prostate Symptom Score (IPSS), and maximum flow rate (Qmax) to predict the functional improvement of each group. The trial is registered at http://www.irct.ir (number IRCT201202138146N3). The mean age (± standard deviation) of the patients was 68.2 ± 7.8 years in TURP and 68.5 ± 8.8 in diode groups. In TURP and diode groups, the operation time was 54.9 ± 15.3 vs 60.6 ± 22.6 minutes (P = .14), Foley catheterization time was 88.9 ± 22.5 vs 20.1 ± 4.6 hours (P = .0001) and postoperative hospital stay was 59.9 ± 14.4 vs 25.8 ± 9.2 hours (P = .0001) respectively. Outcome with regard to increase in Qmax, decrease in IPSS, and decrease in postvoid residual urine volume showed a dramatic improvement in both groups during the first 6 months. In the TURP group, the values of IPSS and Qmax were respectively lower and higher than diode patients at 12 and 24 months of follow-up. According to our study, diode laser vaporization (980 nm) offers a safe and feasible procedure in the management of patients with symptomatic benign prostatic hypertrophy; however, at longer follow-up the functional outcome of diode laser vaporization has been less efficient than TURP. Copyright © 2014 Elsevier Inc. All rights reserved.

CO2 and diode laser for excisional biopsies of oral mucosal lesions. A pilot study evaluating clinical and histopathological parameters.

PubMed

Suter, Valérie G A; Altermatt, Hans Jörg; Sendi, Pedram; Mettraux, Gérald; Bornstein, Michael M

2010-01-01

The present pilot study evaluates the histopathological characteristics and suitability of CO2 and diode lasers for performing excisional biopsies in the buccal mucosa with special emphasis on the extent of the thermal damage zone created. 15 patients agreed to undergo surgical removal of their fibrous hyperplasias with a laser. These patients were randomly assigned to one diode or two CO2 laser groups. The CO2 laser was used in a continuous wave mode (cw) with a power of 5 W (Watts), and in a pulsed char-free mode (cf). Power settings for the diode laser were 5.12 W in a pulsed mode. The thermal damage zone of the three lasers and intraoperative and postoperative complications were assessed and compared. The collateral thermal damage zone on the borders of the excisional biopsies was significantly smaller with the CO, laser for both settings tested compared to the diode laser regarding values in pm or histopathological index scores. The only intraoperative complication encountered was bleeding, which had to be controlled with electrocauterization. No postoperative complications occurred in any of the three groups. The CO2 laser seems to be appropriate for excisional biopsies of benign oral mucosal lesions. The CO2 laser offers clear advantages in terms of smaller thermal damage zones over the diode laser. More study participants are needed to demonstrate potential differences between the two different CO2 laser settings tested.

Comparison of effects of diode laser and CO2 laser on human teeth and their usefulness in topical fluoridation.

PubMed

González-Rodríguez, Alberto; de Dios López-González, Juan; del Castillo, Juan de Dios Luna; Villalba-Moreno, Juan

2011-05-01

Various authors have reported more effective fluoridation from the use of lasers combined with topical fluoride than from conventional topical fluoridation. Besides the beneficial effect of lasers in reducing the acid solubility of an enamel surface, they can also increase the uptake of fluoride. The study objectives were to compare the action of CO(2) and GaAlAs diode lasers on dental enamel and their effects on pulp temperature and enamel fluoride uptake. Different groups of selected enamel surfaces were treated with amine fluoride and irradiated with CO(2) laser at an energy power of 1 or 2 W or with diode laser at 5 or 7 W for 15 s each and compared to enamel surfaces without treatment or topical fluoridated. Samples were examined by means of environmental scanning electron microscopy (ESEM). Surfaces of all enamel samples were then acid-etched, measuring the amount of fluoride deposited on the enamel by using a selective ion electrode. Other enamel surfaces selected under the same conditions were irradiated as described above, measuring the increase in pulp temperature with a thermocouple wire. Fluorination with CO(2) laser at 1 W and diode laser at 7 W produced a significantly greater fluoride uptake on enamel (89 ± 18 mg/l) and (77 ± 17 mg/l) versus topical fluoridation alone (58 ± 7 mg/l) and no treatment (20 ± 1 mg/l). Diode laser at 5 W produced a lesser alteration of the enamel surface compared to CO(2) laser at 1 W, but greater pulp safety was provided by CO(2) laser (ΔT° 1.60° ± 0.5) than by diode laser (ΔT° 3.16° ± 0.6). Diode laser at 7 W and CO(2) laser at 2 W both caused alterations on enamel surfaces, but great pulp safety was again obtained with CO(2) (ΔT° 4.44° ± 0.60) than with diode (ΔT° 5.25° ± 0.55). Our study demonstrates that CO(2) and diode laser irradiation of the enamel surface can both increase fluoride uptake; however, laser energy parameters must be carefully controlled in order to limit increases in pulpal temperature and alterations to the enamel surface.

High-power diode laser versus electrocautery surgery on human papillomavirus lesion treatment.

PubMed

Baeder, Fernando Martins; Santos, Maria Teresa Botti R; Pelino, Jose Eduardo Pelizon; Duarte, Danilo Antonio; Genovese, Walter Joao

2012-05-01

The use of high-power lasers has facilitated and improved human papillomavirus (HPV) treatment protocols and has also become very popular in recent years. This application has been more frequently used in hospitals, especially in gynecology. The present study aimed to evaluate the effects of high-power diode laser to remove oral lesions caused by HPV and the consequent effects on virus load following the wound tissue healing process compared with one of the most conventional surgical techniques involving electrocautery. Surgeries were performed on 5 patients who had 2 distinct lesions caused by HPV. All patients were submitted to both electrocautery and high-power diode laser. Following a 20-day period, when the area was healed, sample material was collected through curettage for virus load quantitative analysis.Observation verified the presence of virus in all the samples; however, surgeries performed with the laser also revealed a significant reduction in virus load per cell compared with those performed with electrocautery. The ease when handling the diode laser, because of the flexibility of its fibers and precision of its energy delivery system, provides high-accuracy surgery, which facilitates the treatment of large and/or multifocal lesions. The use of high-power diode laser is more effective in treatment protocols of lesions caused by HPV.

Fundamental and subharmonic excitation for an oscillator with several tunneling diodes in series

NASA Technical Reports Server (NTRS)

Boric-Lubecke, Olga; Pan, Dee-Son; Itoh, Tatsuo

1995-01-01

Connecting several tunneling diodes in series shows promise as a method for increasing the output power of these devices as millimeter-wave oscillators. However, due to the negative differential resistance (NDR) region in the dc I-V curve of a single tunneling diode, a circuit using several devices connected in series, and biased simultaneously in the NDR region, is dc unstable. Because of this instability, an oscillator with several tunneling diodes in series has a demanding excitation condition. Excitation using an externally applied RF signal is one approach to solving this problem. This is experimentally demonstrated using an RF source, both with frequency close to as well as with frequency considerably lower than the oscillation frequency. Excitation by an RF (radio frequency) source with a frequency as low as one sixth of the oscillation frequency was demonstrated in a proof-of-principle experiment at 2 GHz, for an oscillator with two tunnel diodes connected in series. Strong harmonics of the oscillation signal were generated as a result of the highly nonlinear dc I-V curve of the tunnel diode and a large signal oscillator design. Third harmonic output power comparable to that of the fundamental was observed in one oscillator circuit. If submillimeter wave resonant-tunneling diodes (RTD's) are used instead of tunnel diodes, this harmonic output may be useful for generating signals at frequencies well into the terahertz range.

Simulations of Large-Area Electron Beam Diodes

NASA Astrophysics Data System (ADS)

Swanekamp, S. B.; Friedman, M.; Ludeking, L.; Smithe, D.; Obenschain, S. P.

1999-11-01

Large area electron beam diodes are typically used to pump the amplifiers of KrF lasers. Simulations of large-area electron beam diodes using the particle-in-cell code MAGIC3D have shown the electron flow in the diode to be unstable. Since this instability can potentially produce a non-uniform current and energy distribution in the hibachi structure and lasing medium it can be detrimental to laser efficiency. These results are similar to simulations performed using the ISIS code.(M.E. Jones and V.A. Thomas, Proceedings of the 8^th) International Conference on High-Power Particle Beams, 665 (1990). We have identified the instability as the so called ``transit-time" instability(C.K. Birdsall and W.B. Bridges, Electrodynamics of Diode Regions), (Academic Press, New York, 1966).^,(T.M. Antonsen, W.H. Miner, E. Ott, and A.T. Drobot, Phys. Fluids 27), 1257 (1984). and have investigated the role of the applied magnetic field and diode geometry. Experiments are underway to characterize the instability on the Nike KrF laser system and will be compared to simulation. Also some possible ways to mitigate the instability will be presented.

Theoretical study on the thermal and optical features of a diode side-pumped alkali laser

NASA Astrophysics Data System (ADS)

Han, Juhong; Liu, Xiaoxu; Wang, Hongyuan; Cai, He; An, Guofei; Zhang, Wei; Wang, You

2018-03-01

As one of the most hopeful candidates to achieve high power performances, a diode-pumped alkali laser (DPAL) has attracted a lot of attention in the last decade. Comparing with a diode end-pumped alkali laser (DEPAL), a diode side-pumped alkali laser (DSPAL) has great potentiality to realize an even-higher output of alkali lasers. However, there are few related researching studies concern DSPAL. In this paper, we introduce a theoretical model to investigate the physical features of a double-directions side-pumped alkali laser. The distributions of the population density, temperature, and absorption power at the cross section of a vapor cell are systematically studied. The analyses should be valuable for design of a steady high-powered DPAL.

High-power fiber-coupled 100W visible spectrum diode lasers for display applications

NASA Astrophysics Data System (ADS)

Unger, Andreas; Küster, Matthias; Köhler, Bernd; Biesenbach, Jens

2013-02-01

Diode lasers in the blue and red spectral range are the most promising light sources for upcoming high-brightness digital projectors in cinemas and large venue displays. They combine improved efficiency, longer lifetime and a greatly improved color space compared to traditional xenon light sources. In this paper we report on high-power visible diode laser sources to serve the demands of this emerging market. A unique electro-optical platform enables scalable fiber coupled sources at 638 nm with an output power of up to 100 W from a 400 μm NA0.22 fiber. For the blue diode laser we demonstrate scalable sources from 5 W to 100 W from a 400 μm NA0.22 fiber.

Comparison of a novel high-power blue diode laser (λ=442 nm) with Ho:YAG (λ=2100 nm), Tm fiber (λ=1940 nm), and KTP (λ=532 nm) lasers for soft tissue ablation

NASA Astrophysics Data System (ADS)

Vinnichenko, Victoriya; Kovalenko, Anastasiya; Arkhipova, Valeriya; Yaroslavsky, Ilya; Altshuler, Gregory; Gapontsev, Valentin

2018-02-01

Three lasers were directly compared, including the Ho:YAG laser (λ = 2100 nm), Tm fiber laser (λ = 1940 nm) operating in 3 different modes (CW, regular pulse, and super pulse), and blue diode laser (λ = 442 nm) for vaporization and coagulation efficiency for treating blood-rich soft tissues, ex vivo, in a porcine kidney model at quasi-contact cutting in water. In addition, experimental results were compared with published data on performance of KTP laser (λ = 532 nm) at similar experimental settings (Power = 60 W and cutting speed = 2 mm/s). Tm fiber laser in pulsed mode and blue laser produced highest vaporization rates of 3.7 and 3.4 mm3/s, respectively. Tm fiber laser (in both CW and pulsed modes) also produced the largest coagulation zone among the laser sources tested. A carbonization zone was observed for Tm fiber laser in CW and pulsed modes, as well as for the blue diode laser. Tm fiber laser in super-pulse mode and Ho:YAG laser both resulted in irregular coagulation zones without carbonization. Comparison with known data for KTP laser revealed that tissue effects of the blue laser are similar to that of the KTP laser. These results suggest that the combination of the two lasers (Tm fiber and blue diode) in one system may achieve high cutting efficiency and optimal coagulation for hemostasis during surgical treatment. Ex vivo testing of the combined system revealed feasibility of this approach. The combination of the CW Tm fiber laser (120W) and the blue diode laser (60W) emitting through a combination tip were compared with CW 120 W Tm fiber laser alone and 120 W Ho:YAG laser. Vaporization rates measured 34, 28, and 6 mm3/s, and coagulation zones measured 0.6, 1.3, and 1.7 mm, respectively. A carbonization zone was only observed with CW Tm fiber laser. The vaporization rate of combined CW Tm fiber laser / blue diode laser was comparable to published data for KTP laser for equivalent total power. Thus, high-power blue diode laser, Tm fiber laser, and their combination may provide an alternative to conventional Ho:YAG and KTP lasers for applications in urology and other surgical fields.

Model for Generation of Neutrons in a Compact Diode with Laser-Plasma Anode and Suppression of Electron Conduction Using a Permanent Cylindrical Magnet

NASA Astrophysics Data System (ADS)

Shikanov, A. E.; Vovchenko, E. D.; Kozlovskii, K. I.; Rashchikov, V. I.; Shatokhin, V. L.

2018-04-01

A model for acceleration of deuterons and generation of neutrons in a compact laser-plasma diode with electron isolation using magnetic field generated by a hollow cylindrical permanent magnet is presented. Experimental and computer-simulated neutron yields are compared for the diode structure under study. An accelerating neutron tube with a relatively high neutron generation efficiency can be constructed using suppression of electron conduction with the aid of a magnet placed in the vacuum volume.

Thermal characterization of GaN-based laser diodes by forward-voltage method

NASA Astrophysics Data System (ADS)

Feng, M. X.; Zhang, S. M.; Jiang, D. S.; Liu, J. P.; Wang, H.; Zeng, C.; Li, Z. C.; Wang, H. B.; Wang, F.; Yang, H.

2012-05-01

An expression of the relation between junction temperature and forward voltage common for both GaN-based laser diodes (LDs) and light emitting diodes is derived. By the expression, the junction temperature of GaN-based LDs emitting at 405 nm was measured at different injection current and compared with the result of micro-Raman spectroscopy, showing that the expression is reasonable. In addition, the activation energy of Mg in AlGaN/GaN superlattice layers is obtained based on the temperature dependence of forward voltage.

Functionalized graphene/silicon chemi-diode H₂ sensor with tunable sensitivity.

PubMed

Uddin, Md Ahsan; Singh, Amol Kumar; Sudarshan, Tangali S; Koley, Goutam

2014-03-28

A reverse bias tunable Pd- and Pt-functionalized graphene/Si heterostructure Schottky diode H2 sensor has been demonstrated. Compared to the graphene chemiresistor sensor, the chemi-diode sensor offers more than one order of magnitude higher sensitivity as the molecular adsorption induced Schottky barrier height change causes the heterojunction current to vary exponentially in reverse bias. The reverse bias operation also enables low power consumption, as well as modulation of the atomically thin graphene's Fermi level, leading to tunable sensitivity and detection of H₂ down to the sub-ppm range.

Power MOSFET-diode-based limiter for high-frequency ultrasound systems.

PubMed

Choi, Hojong; Kim, Min Gon; Cummins, Thomas M; Hwang, Jae Youn; Shung, K Kirk

2014-10-01

The purpose of the limiter circuits used in the ultrasound imaging systems is to pass low-voltage echo signals generated by ultrasonic transducers while preventing high-voltage short pulses transmitted by pulsers from damaging front-end circuits. Resistor-diode-based limiters (a 50 Ω resistor with a single cross-coupled diode pair) have been widely used in pulse-echo measurement and imaging system applications due to their low cost and simple architecture. However, resistor-diode-based limiters may not be suited for high-frequency ultrasound transducer applications since they produce large signal conduction losses at higher frequencies. Therefore, we propose a new limiter architecture utilizing power MOSFETs, which we call a power MOSFET-diode-based limiter. The performance of a power MOSFET-diode-based limiter was evaluated with respect to insertion loss (IL), total harmonic distortion (THD), and response time (RT). We compared these results with those of three other conventional limiter designs and showed that the power MOSFET-diode-based limiter offers the lowest IL (-1.33 dB) and fastest RT (0.10 µs) with the lowest suppressed output voltage (3.47 Vp-p) among all the limiters at 70 MHz. A pulse-echo test was performed to determine how the new limiter affected the sensitivity and bandwidth of the transducer. We found that the sensitivity and bandwidth of the transducer were 130% and 129% greater, respectively, when combined with the new power MOSFET-diode-based limiter versus the resistor-diode-based limiter. Therefore, these results demonstrate that the power MOSFET-diode-based limiter is capable of producing lower signal attenuation than the three conventional limiter designs at higher frequency operation. © The Author(s) 2014.

Alleviation of efficiency droop in InGaN/GaN multiple quantum well light-emitting diodes with trapezoidal quantum barriers

NASA Astrophysics Data System (ADS)

Kim, Sang-Jo; Lee, Kwang Jae; Park, Seong-Ju

2018-06-01

We numerically investigated the effects of trapezoidal quantum barriers (QBs) on efficiency droop in InGaN/GaN multiple quantum well (MQW) light-emitting diodes (LEDs). Simulations showed that the electrostatic field in QWs of LEDs with trapezoidal barriers is reduced because of the reduced sheet charge density at the QW-QB interface caused by the thin GaN layer in trapezoidal QBs. Additionally, the InGaN grading region in trapezoidal QBs suppresses hot carrier transport and this enhances efficient carrier injection into the QWs. The electroluminescence intensity of an LED with trapezoidal QBs is increased by 10.2% and 6.7% at 245 A cm‑2 when compared with the intensities of LEDs with square-type GaN barriers and multilayer barriers, respectively. The internal quantum efficiency (IQE) droop of an LED with trapezoidal QBs is 16% at 300 A cm‑2, while LEDs with square-type GaN barriers and multilayer barriers have IQE droop of 31% and 24%, respectively. This IQE droop alleviation in LEDs with trapezoidal QBs is attributed to the reduced energy band bending, efficient hole injection, and more uniform hole distribution in the MQWs that results from reduction of the piezoelectric field by the trapezoidal QBs. These results indicate that the trapezoidal QB in MQWs is promising for enhanced efficiency in high-power GaN-based LEDs.

Effect of inserting a hole injection layer in organic light-emitting diodes: A numerical approach

NASA Astrophysics Data System (ADS)

Lee, Hyeongi; Hwang, Youngwook; Won, Taeyoung

2015-01-01

For investigating the effect of inserting a hole injection layer (HIL), we carried out a computational study concerning organic light-emitting diodes (OLEDs) that had a thin CuPc layer as the hole injection layer. We used S-TAD (2, 2', 7, 7'-tetrakis-(N, Ndiphenylamino)-9, 9-spirobifluoren) for the hole transfer layer, S-DPVBi (4, 4'-bis (2, 2'-diphenylvinyl)-1, 1'-spirobiphenyl) for the emission layer and Alq3 (Tris (8-hyroxyquinolinato) aluminium) for the electron transfer layer. This tri-layer device was compared with four-layer devices. To this tri-layer device, we added a thin CuPc layer, which had a 5.3 eV highest occupied molecular orbital (HOMO) level and a 3.8 eV lowest unoccupied molecular orbital (LUMO) level, as a hole injection layer, and we chose this device for Device A. Also, we varied the LUMO level or the HOMO level of the thin CuPc layer. These two devices were identified as Device C and Device D, respectively. In this paper, we simulated the carrier injection, transport and recombination in these four devices. Thereby, we showed the effect of the HIL, and we demonstrated that the characteristics of these devices were improved by adding a thin layer of CuPc between the anode and the HTL.

Design and construction of a novel 1H/19F double-tuned coil system using PIN-diode switches at 9.4T.

PubMed

Choi, Chang-Hoon; Hong, Suk-Min; Ha, YongHyun; Shah, N Jon

2017-06-01

A double-tuned 1 H/ 19 F coil using PIN-diode switches was developed and its performance evaluated. The is a key difference from the previous developments being that this design used a PIN-diode switch in series with an additionally inserted inductor in parallel to one of the capacitors on the loop. The probe was adjusted to 19 F when the reverse bias voltage was applied (PIN-diode OFF), whilst it was switched to 1 H when forward current was flowing (PIN-diode ON). S-parameters and Q-factors of single- and double-tuned coils were examined and compared with/without a phantom on the bench. Imaging experiments were carried out on a 9.4T preclinical scanner. All coils were tuned at resonance frequencies and matched well. It is shown that the Q-ratio and SNR of double-tuned coil at 19 F frequency are nearly as good as those of a single-tuned coil. Since the operating frequency was tuned to 19 F when the PIN-diodes were turned off, losses due to PIN-diodes were substantially lower resulting in the provision of excellent image quality of X-nuclei. Copyright © 2017 Elsevier Inc. All rights reserved.

Modeling and Simulation of a 5.8kV SiC PiN Diode for Inductive Pulsed Plasma Thruster Applications

NASA Technical Reports Server (NTRS)

Toftul, Alexandra; Hudgins, Jerry L.; Polzin, Kurt A.; Martin, Adam K.

2014-01-01

Current ringing in an Inductive Pulsed Plasma Thruster (IPPT) can lead to reduced energy efficiency, excess heating, and wear on circuit components such as capacitors and solid state devices. Clamping off the current using a fast turn-off power diode is an effective way to reduce current ringing and increase energy efficiency. A diode with a shorter reverse recovery time will allow the least amount of current to ring back through the circuit, as well as minimize switching losses. The reverse recovery response of a new 5.8 kilovolt SiC PiN diode from Cree, Inc. in the IPPT plasma drive circuit is investigated using a physicsbased Simulink model, and compared with that of a 5SDF 02D6004 5.5 kilovolt fast-switching Si diode from ABB. Parameter extraction was carried out for each diode using both datasheet specifications and experimental waveforms, in order to most accurately adapt the model to the specific device. Further experimental data will be discussed using a flat-plate IPPT developed at NASA Marshall Space Flight Center and used to verify the simulation results. A final quantitative measure of circuit efficiency will be described for both the Si and SiC diode configuration.

Fabrication and characterization of magnetically tunable metal-semiconductor schottky diode using barium hexaferrite thin film on gold

NASA Astrophysics Data System (ADS)

Kaur, Jotinder; Sharma, Vinay; Sharma, Vipul; Veerakumar, V.; Kuanr, Bijoy K.

2016-05-01

Barium Hexaferrite (BaM) is an extensively studied magnetic material due to its potential device application. In this paper, we study Schottky junction diodes fabricated using gold and BaM and demonstrate the function of a spintronic device. Gold (50 nm)/silicon substrate was used to grow the BaM thin films (100-150 nm) using pulsed laser deposition. I-V characteristics were measured on the Au/BaM structure sweeping the voltage from ±5 volts. The forward and reverse bias current-voltage curves show diode like rectifying characteristics. The threshold voltage decreases while the output current increases with increase in the applied external magnetic field showing that the I-V characteristics of the BaM based Schottky junction diodes can be tuned by external magnetic field. It is also demonstrated that, the fabricated Schottky diode can be used as a half-wave rectifier, which could operate at high frequencies in the range of 1 MHz compared to the regular p-n junction diodes, which rectify below 10 kHz. In addition, it is found that above 1 MHz, Au/BaM diode can work as a rectifier as well as a capacitor filter, making the average (dc) voltage much larger.

Laser deposition of resonant silicon nanoparticles on perovskite for photoluminescence enhancement

NASA Astrophysics Data System (ADS)

Tiguntseva, E. Y.; Zalogina, A. S.; Milichko, V. A.; Zuev, D. A.; Omelyanovich, M. M.; Ishteev, A.; Cerdan Pasaran, A.; Haroldson, R.; Makarov, S. V.; Zakhidov, A. A.

2017-11-01

Hybrid lead halide perovskite based optoelectronics is a promising area of modern technologies yielding excellent characteristics of light emitting diodes and lasers as well as high efficiencies of photovoltaic devices. However, the efficiency of perovskite based devices hold a potential of further improvement. Here we demonstrate high photoluminescence efficiency of perovskites thin films via deposition of resonant silicon nanoparticles on their surface. The deposited nanoparticles have a number of advances over their plasmonic counterparts, which were applied in previous studies. We show experimentally the increase of photoluminescence of perovskite film with the silicon nanoparticles by 150 % as compared to the film without the nanoparticles. The results are supported by numerical calculations. Our results pave the way to high throughput implementation of low loss resonant nanoparticles in order to create highly effective perovskite based optoelectronic devices.

Turbidimetric method for the determination of particle sizes in polypropylene/clay-composites during extrusion.

PubMed

Becker, Wolfgang; Guschin, Viktor; Mikonsaari, Irma; Teipel, Ulrich; Kölle, Sabine; Weiss, Patrick

2017-01-01

Nanocomposites with polypropylene as matrix material and nanoclay as filler were produced in a double twin screw extruder. The extrusion was monitored with a spectrometer in the visible and near-infrared spectral region with a diode array spectrometer. Two probes were installed at the end at the extruder die and the transmission spectra were measured during the extrusion. After measuring the transmission spectra and converting into turbidity units, the particle distribution density was calculated via numerical linear equation system. The distribution density function shows either a bimodal or mono modal shape in dependence of the processing parameters like screw speed, dosage, and concentration of the nanoclays. The method was verified with SEM measurements which yield comparable results. The method is suitable for industrial in-line processing monitoring of particle radii and dispersion process, respectively.

Self-excited oscillation and monostable operation of a bistable light emitting diode (BILED)

NASA Astrophysics Data System (ADS)

Okumura, K.; Ogawa, Y.; Ito, H.; Inaba, H.

1983-07-01

A new simple opto-electronic bistable device has been obtained by combining a light emitting diode (LED) and a photodetector (PD) with electronic feedback using a broad bandpass filter. This has interesting dynamic characteristics which are expected to have such various applications as optical oscillators, optical pulse generators and optical pulsewidth modulators. The dynamic characteristics are represented by second-order nonlinear differential equations. In the analyses of these nonlinear systems, instead of numerical analyses with a computer, an approximate analytical method devised for this purpose has been used. This method has been used for investigating the characteristics of the proposed device quantitatively. These include the frequency of oscillations, pulsewidths and hysteresis. The results of the analyses agree approximately with experimentally observed values, thus the dynamic characteristics of the proposed device can be explained.

Suppression of electron leakage in 808 nm laser diodes with asymmetric waveguide layer

NASA Astrophysics Data System (ADS)

Xiang, Li; Degang, Zhao; Desheng, Jiang; Ping, Chen; Zongshun, Liu; Jianjun, Zhu; Ming, Shi; Danmei, Zhao; Wei, Liu

2016-01-01

Electron leakage in GaAs-based separately confined heterostructure 808 nm laser diodes (SCH LDs) has a serious influence on device performance. Here, in order to reduce the energy of electrons injected into the quantum well (QW), an AlGaAs interlayer with a smaller Al component is added between the active region and the n-side waveguide. Numerical device simulation reveals that when the Al-composition of the AlGaAs interlayer and its thickness are properly elected, the electron leakage is remarkably depressed and the characteristics of LDs are improved, owing to the reduction of injected electron energy and the improvement of QW capture efficiency. Project supported by the National Natural Science Foundation of China (Nos. 61377020, 61376089, 61223005, 61176126) and the National Science Fund for Distinguished Young Scholars (No. 60925017).

INTERNATIONAL CONFERENCE ON SEMICONDUCTOR INJECTION LASERS SELCO-87: Calculation of the temperature distribution in ridged-waveguide laser diodes

NASA Astrophysics Data System (ADS)

Piprek, J.; Nürnberg, R.

1988-11-01

A numerical solution is obtained of the steady-state heat conduction equation for InGaAsP/InP ridge-waveguide lasers (λ = 1.3 μm) soldered upside down to a heat sink. Two-dimensional temperature distributions perpendicular to the ridge are obtained. It is assumed that the heat sources inside such a laser are the active region and the contact at the top of the ridge. An increase in the temperature of the junction and the corresponding thermal resistance of a laser chip and solder are calculated for several sets of laser parameters. The results indicate that the thermal properties are particularly sensitive to the width of the ridge and the thickness of the solder. The results obtained should be useful in thermal optimization of ridge-waveguide laser diodes.

Theoretical and experimental study of a laser-diode-pumped actively Q-switched Yb:NaY(WO4)2 laser with acoustic-optic modulator

NASA Astrophysics Data System (ADS)

Zhang, Haikun; Xia, Wei; Song, Peng; Wang, Jing; Li, Xin

2018-03-01

A laser-diode-pumped actively Q-switched Yb:NaY(WO4)2 laser operating at around 1040 nm is presented for the first time with acoustic-optic modulator. The dependence of pulse width on incident pump power for different pulse repetition rates is measured. By considering the Guassian spatial distribution of the intracavity photon density and the initial population-inversion density as well as the longitudinal distribution of the photon density along the cavity axis and the turn off time of the acoustic-optic Q-switch, the coupled equations of the actively Q-switched Yb:NaY(WO4)2 laser are given. The coupled rate equations are used to simulate the Q-switched process of laser, and the numerical solutions agree with the experimental results.

Boundary conditions on the plasma emitter surface in the presence of a particle counter flow: I. Ion emitter

DOE Office of Scientific and Technical Information (OSTI.GOV)

Astrelin, V. T., E-mail: V.T.Astrelin@inp.nsk.su; Kotelnikov, I. A.

Emission of positively charged ions from a plasma emitter irradiated by a counterpropagating electron beam is studied theoretically. A bipolar diode with a plasma emitter in which the ion temperature is lower than the electron temperature and the counter electron flow is extracted from the ion collector is calculated in the one-dimensional model. An analog of Bohm’s criterion for ion emission in the presence of a counterpropagating electron beam is derived. The limiting density of the counterpropagating beam in a bipolar diode operating in the space-charge-limited-emission regime is calculated. The full set of boundary conditions on the plasma emitter surfacemore » that are required for operation of the high-current optics module in numerical codes used to simulate charged particle sources is formulated.« less

Effects of two-step Mg doping in p-GaN on efficiency characteristics of InGaN blue light-emitting diodes without AlGaN electron-blocking layers

NASA Astrophysics Data System (ADS)

Ryu, Han-Youl; Lee, Jong-Moo

2013-05-01

A light-emitting diode (LED) structure containing p-type GaN layers with two-step Mg doping profiles is proposed to achieve high-efficiency performance in InGaN-based blue LEDs without any AlGaN electron-blocking-layer structures. Photoluminescence and electroluminescence (EL) measurement results show that, as the hole concentration in the p-GaN interlayer between active region and the p-GaN layer increases, defect-related nonradiative recombination increases, while the electron current leakage decreases. Under a certain hole-concentration condition in the p-GaN interlayer, the electron leakage and active region degradation are optimized so that high EL efficiency can be achieved. The measured efficiency characteristics are analyzed and interpreted using numerical simulations.

Practical UAV Optical Sensor Bench with Minimal Adjustability

NASA Technical Reports Server (NTRS)

Pilgrim, Jeffrey; Gonzales, Paula

2013-01-01

A multiple-pass optical platform eliminates essentially all optical alignment degrees of freedom, save one. A four-pass absorption spectrometer architecture is made rigid by firmly mounting dielectric-coated mirror prisms with no alignment capability to the platform. The laser diode beam is collimated by a small, custom-developed lens, which has only a rotational degree of freedom along the standard optical "z" axis. This degree is itself eliminated by adhesive after laser collimation. Only one degree of freedom is preserved by allowing the laser diode chip and mount subassembly to move relative to the collimating lens by using over-sized mounting holes. This allows full 360 deg motion of a few millimeters relative to the lens, which, due to the high numerical aperture of the lens, provides wide directional steering of the collimated laser beam.

Advanced optical manufacturing and testing; Proceedings of the Meeting, San Diego, CA, July 9-11, 1990

NASA Astrophysics Data System (ADS)

Sanger, Gregory M.; Reid, Paul B.; Baker, Lionel R.

1990-11-01

Consideration is given to advanced optical fabrication, profilometry and thin films, and metrology. Particular attention is given to automation for optics manufacturing, 3D contouring on a numerically controlled grinder, laser-scanning lens configurations, a noncontact precision measurement system, novel noncontact profiler design for measuring synchrotron radiation mirrors, laser-diode technologies for in-process metrology, measurements of X-ray reflectivities of Au-coatings at several energies, platinum coating of an X-ray mirror for SR lithography, a Hilbert transform algorithm for fringe-pattern analysis, structural error sources during fabrication of the AXAF optical elements, an in-process mirror figure qualification procedure for large deformable mirrors, interferometric evaluation of lenslet arrays for 2D phase-locked laser diode sources, and manufacturing and metrology tooling for the solar-A soft X-ray telescope.

Status and summary of laser energy conversion. [for space power transmission systems

NASA Technical Reports Server (NTRS)

Lee, G.

1978-01-01

This paper presents a survey of the status of laser energy converters. Since the inception of these devices in the early 1970's, significant advances have been made in understanding the basic conversion processes. Numerous theoretical and experimental studies have indicated that laser energy can be converted at wavelengths from the ultraviolet to the far-infrared. These converters can be classified into five general categories: photovoltaics, heat engines, thermoelectronic, optical diode, and photochemical. The conversion can be directly into electricity (such as the photovoltaic, thermoelectronic, and optical diode) or it can go through an intermediate stage of conversion to mechanical energy, as in the heat engines. The photochemical converters result in storable energy such as hydrogen. Projected conversion efficiencies range from about 30% for the photochemical to nearly 75% for the heat engines.

Miniaturized power limiter metasurface based on Fano-type resonance and Babinet principle.

PubMed

Loo, Y L; Wang, H G; Zhang, H; Ong, C K

2016-09-05

In this work, we present a miniaturize power limiter, a device with size smaller than that required by the working frequency, made of coupled self-complementary electric inductive-capacitive (CELC) resonator and original electric inductive-capacitive (ELC) structure. We also make use of Babinet principle to ensure both CELC and ELC are resonating at the same frequency. The CELC structure is loaded with a Schottky diode to achieve the effect of a nonlinear power limiter. The constructive interference of CELC and ELC structure produces a new Fano-type resonance peak at a lower frequency. The Fano peak is sharp and able to concentrate electric field at a region between the inner and outer metallic patch of the metastructure, hence enhancing the nonlinear properties of the loaded diode. The Fano peak enhances the maximum isolation of the power limiter due to the local field enhancement at where the diode is loaded. Numerical simulation and experiment are conducted in the S-band frequency to verify the power limiting effect of the device designed and to discuss the formation of Fano peak. The power limiter designed has a maximum isolation of 8.4 dB and a 3-dB isolation bandwidth of 6%.

Antibacterial Activity of Diode Laser and Sodium Hypochlorite in Enterococcus Faecalis-Contaminated Root Canals.

PubMed

Sohrabi, Khosrow; Sooratgar, Aidin; Zolfagharnasab, Kaveh; Kharazifard, Mohammad Javad; Afkhami, Farzaneh

2016-01-01

The aim of the present in vitro study was to evaluate the disinfection ability of 980-nm diode laser in comparison with sodium hypochlorite (NaOCl) as a common root canal irrigant in canals infected with Enterococcus faecalis (E. faecalis). The root canals of 18 extracted single-rooted premolars were prepared by rotary system. After decoronation, the roots were autoclaved. One specimen was chosen for the negative control, and the remaining teeth were incubated with E. faecalis suspension for two weeks. Subsequently, one specimen was selected as the positive control and the remaining samples were divided into two groups (n=8). The samples of the first group were irrigated with 5.25% NaOCl and the second group were treated with a 980-nm diode laser. Microbial samples were taken from the root canals and bacterial cultivation was carried out. The average value and the standard deviation of colony-forming units (CFU) of each specimen were measured using descriptive statistics. The student's t-test was used to compare the reduction in CFU in each group. The equality of variance of CFU was measured by the Levene's test. NaOCl resulted in 99.87% removal of the bacteria and showed significantly more antibacterial effect compared to the 980-nm diode laser which led to 96.56% bacterial reduction (P<0.05). Although 5.25% NaOCl seems to reduce E. faecalis more effectively, the diode laser also reduced the bacterial count. Therefore a 980-nm diode laser could be considered as a complementary disinfection method in root canal treatment.

Comparative clinical evaluation of gallium-aluminum-arsenide diode laser and potassium nitrate in treating dentinal hypersensitivity.

PubMed

Tevatia, Siddharth; Khatri, Vivek; Sharma, Nikhil; Dodwad, Vidya

2017-01-01

Dentinal hypersensitivity (DH) is a chronic disorder in which patients report sharp and acute pain to a variety of stimuli. Till date, a standardized procedure to treat DH is missing, though several alternative treatment strategies have been designed, including laser therapies. The aim of the study was to treat DH with minimum chemical concentration and least laser energy level with longer follow-up period. One hundred and twenty patients were randomly divided into four groups: (i) Group 1-5% potassium nitrate (KNO 3 ); (ii) Group 2 - gallium-aluminum-arsenide diode laser (62.2 J/cm 2 , wavelength - 980 nm, noncontact pulse mode, and power wattage - 0.5 W); (iii) Group 3 - combined 5% KNO 3 and the diode laser; and (iv) Group 4 - placebo (control). The visual analog scale (VAS) scores were recorded, analyzed, and compared to tactile stimuli, cold water, and air blast tests at different intervals for 6 weeks. Synergistic use of 5% KNO 3 and diode laser (Group 3) significantly reduced the DH pain, which was almost negligible after 6 th week (97%-99% of the pain was reported to be relieved) and showed promising results than any other studied groups. Further, the diode laser (Group 2) showed better results than 5% KNO 3 (Group 1). One-way ANOVA and Bonferroni correction post hoc test revealed the combination of groups with significant differences in the mean VAS scores at the different interval of time ( P < 0.01). Convincingly, the combined application of 5% KNO 3 with the diode laser can be recommended for treating DH patients.

A carbon nanotube optical rectenna

NASA Astrophysics Data System (ADS)

Sharma, Asha; Singh, Virendra; Bougher, Thomas L.; Cola, Baratunde A.

2015-12-01

An optical rectenna—a device that directly converts free-propagating electromagnetic waves at optical frequencies to direct current—was first proposed over 40 years ago, yet this concept has not been demonstrated experimentally due to fabrication challenges at the nanoscale. Realizing an optical rectenna requires that an antenna be coupled to a diode that operates on the order of 1 PHz (switching speed on the order of 1 fs). Diodes operating at these frequencies are feasible if their capacitance is on the order of a few attofarads, but they remain extremely difficult to fabricate and to reliably couple to a nanoscale antenna. Here we demonstrate an optical rectenna by engineering metal-insulator-metal tunnel diodes, with a junction capacitance of ˜2 aF, at the tip of vertically aligned multiwalled carbon nanotubes (˜10 nm in diameter), which act as the antenna. Upon irradiation with visible and infrared light, we measure a d.c. open-circuit voltage and a short-circuit current that appear to be due to a rectification process (we account for a very small but quantifiable contribution from thermal effects). In contrast to recent reports of photodetection based on hot electron decay in a plasmonic nanoscale antenna, a coherent optical antenna field appears to be rectified directly in our devices, consistent with rectenna theory. Finally, power rectification is observed under simulated solar illumination, and there is no detectable change in diode performance after numerous current-voltage scans between 5 and 77 °C, indicating a potential for robust operation.

Pulsed x-ray generator for commercial gas lasers

NASA Astrophysics Data System (ADS)

Bollanti, S.; Bonfigli, F.; Di Lazzaro, P.; Flora, F.; Giordano, G.; Letardi, T.; Murra, D.; Schina, G.; Zheng, C. E.

2001-10-01

We have designed and tested a 1-m-long x-ray diode based on innovative plasma cathodes, which exploit commercial spark plugs as electron emitters. Based on the results of a numerical study, we optimized both diode geometry (e.g., the angle between anode and cathode surfaces, the thickness of the Al window) and electrical circuitry (e.g., the capacitance in series to each spark plug, the peak voltage of the anode) of our x-ray generator. The overall result is a simple and efficient circuitry, giving a total diode current in excess of 2.1 kA with a breakdown voltage of 70 kV, which generates a 50 ns rise-time x-ray pulse with a spatially averaged dosage of up to 6×10-4 Gy when using a Pb-wrapped anode. The double-diode x-ray generator was operated for 1.5×106 shots at a repetition rate of up to 30 Hz, and the lifetime test was interrupted without any fault. During the lifetime test, it was not necessary to adjust any working parameter. At the end of the lifetime test, the x-ray emission uniformity was better than 80% along the longitudinal axis. This x-ray generator has a lifetime, reliability, and cost fitting the requirements of industrial users. Among the broad range of potential applications, this x-ray generator is particularly suitable to ionize discharge pumped gas lasers, like TEA CO2 and excimer lasers, including those operated by x-ray triggered discharges.

A carbon nanotube optical rectenna.

PubMed

Sharma, Asha; Singh, Virendra; Bougher, Thomas L; Cola, Baratunde A

2015-12-01

An optical rectenna--a device that directly converts free-propagating electromagnetic waves at optical frequencies to direct current--was first proposed over 40 years ago, yet this concept has not been demonstrated experimentally due to fabrication challenges at the nanoscale. Realizing an optical rectenna requires that an antenna be coupled to a diode that operates on the order of 1 PHz (switching speed on the order of 1 fs). Diodes operating at these frequencies are feasible if their capacitance is on the order of a few attofarads, but they remain extremely difficult to fabricate and to reliably couple to a nanoscale antenna. Here we demonstrate an optical rectenna by engineering metal-insulator-metal tunnel diodes, with a junction capacitance of ∼2 aF, at the tip of vertically aligned multiwalled carbon nanotubes (∼10 nm in diameter), which act as the antenna. Upon irradiation with visible and infrared light, we measure a d.c. open-circuit voltage and a short-circuit current that appear to be due to a rectification process (we account for a very small but quantifiable contribution from thermal effects). In contrast to recent reports of photodetection based on hot electron decay in a plasmonic nanoscale antenna, a coherent optical antenna field appears to be rectified directly in our devices, consistent with rectenna theory. Finally, power rectification is observed under simulated solar illumination, and there is no detectable change in diode performance after numerous current-voltage scans between 5 and 77 °C, indicating a potential for robust operation.

Fixed, low radiant exposure vs. incremental radiant exposure approach for diode laser hair reduction: a randomized, split axilla, comparative single-blinded trial.

PubMed

Pavlović, M D; Adamič, M; Nenadić, D

2015-12-01

Diode lasers are the most commonly used treatment modalities for unwanted hair reduction. Only a few controlled clinical trials but not a single randomized controlled trial (RCT) compared the impact of various laser parameters, especially radiant exposure, onto efficacy, tolerability and safety of laser hair reduction. To compare the safety, tolerability and mid-term efficacy of fixed, low and incremental radiant exposures of diode lasers (800 nm) for axillary hair removal, we conducted an intrapatient, left-to-right, patient- and assessor-blinded and controlled trial. Diode laser (800 nm) treatments were evaluated in 39 study participants (skin type II-III) with unwanted axillary hairs. Randomization and allocation to split axilla treatments were carried out by a web-based randomization tool. Six treatments were performed at 4- to 6-week intervals with study subjects blinded to the type of treatment. Final assessment of hair reduction was conducted 6 months after the last treatment by means of blinded 4-point clinical scale using photographs. The primary endpoint was reduction in hair growth, and secondary endpoints were patient-rated tolerability and satisfaction with the treatment, treatment-related pain and adverse effects. Excellent reduction in axillary hairs (≥ 76%) at 6-month follow-up visit after receiving fixed, low and incremental radiant exposure diode laser treatments was obtained in 59% and 67% of study participants respectively (Z value: 1.342, P = 0.180). Patients reported lower visual analogue scale (VAS) pain score on the fixed (4.26) than on the incremental radiant exposure side (5.64) (P < 0.0003). The only side-effect was mild and transient erythema. Subjects better tolerated the fixed, low radiant exposure protocol (P = 0.03). The majority of the study participants were satisfied with both treatments. Both low and incremental radiant exposures produced similar hair reduction and high and comparable patient satisfaction. However, low radiant exposure diode laser treatments were less painful and better tolerated. © 2015 European Academy of Dermatology and Venereology.

Intraindividual comparison of 1,470 nm diode laser versus carbon dioxide laser for tonsillotomy: a prospective, randomized, double blind, controlled feasibility trial.

PubMed

Havel, Miriam; Sroka, Ronald; Englert, Elsa; Stelter, Klaus; Leunig, Andreas; Betz, Christian S

2012-09-01

The need for reduction of post-tonsillectomy hemorrhage has led to promotion of tonsillotomy techniques for tonsil tissue reduction in obstructive tonsillar hypertrophy. This trial compares ablative tissue effects using 1,470 nm diode laser and carbon dioxide laser for tonsillotomy in an intraindividual design. 21 children aged 3-13 years (mean age 6.3 years) underwent laser tonsillotomy for obstructive tonsillar hypertrophy in this double blind, prospective, randomized, clinical feasibility trial. In each of the blinded patients, tonsillotomy was performed using fiber guided 1,470 nm diode laser (contact mode, 15 W power) on the one side and carbon dioxide laser (12 W power) on the other side. An independent, blinded physician documented clinical presentation and patients' symptoms preoperatively and on Days 1, 3, 7, 14, and 21 post-operatively using standardized questionnaire including VAS for each side separately. The mean duration of operative treatment was 2.7 min using 1,470 nm laser and 4.9 min using carbon dioxide laser respectively. Intraoperative bleeding and the frequency of bipolar forceps use for intraoperative bleeding control was significantly less using 1,470 nm diode laser system. There was no difference in post-operative pain scores between the carbon dioxide laser treated and the 1,470 nm fiber guided diode laser treated side. No infections, hemorrhages or other complications occurred in the course of the 3 weeks post-operative period. A fiber-guided 1,470 nm diode laser system offers an efficient and safe method for tonsillotomy as treatment of obstructive tonsillar hypertrophy. Compared to our standard practice (carbon dioxide laser), 1,470 nm laser application provides comparable tissue ablation effects with less intraoperative bleeding and shorter operation time. Copyright © 2012 Wiley Periodicals, Inc.

Enhancement of breakdown voltage for fully-vertical GaN-on-Si p-n diode by using strained layer superlattice as drift layer

NASA Astrophysics Data System (ADS)

Mase, Suguru; Hamada, Takeaki; Freedsman, Joseph J.; Egawa, Takashi

2018-06-01

We have demonstrated a vertical GaN-on-Si p-n diode with breakdown voltage (BV) as high as 839 V by using a low Si-doped strained layer superlattice (SLS). The p-n vertical diode fabricated by using the n‑-SLS layer as a part of the drift layer showed a remarkable enhancement in BV, when compared with the conventional n‑-GaN drift layer of similar thickness. The vertical GaN-on-Si p-n diodes with 2.3 μm-thick n‑-GaN drift layer and 3.0 μm-thick n‑-SLS layer exhibited a differential on-resistance of 4.0 Ω · cm2 and a BV of 839 V.

Thermal investigation on high power dfb broad area lasers at 975 nm, with 60% efficiency

NASA Astrophysics Data System (ADS)

Mostallino, R.; Garcia, M.; Deshayes, Y.; Larrue, A.; Robert, Y.; Vinet, E.; Bechou, L.; Lecomte, M.; Parillaud, O.; Krakowski, M.

2016-03-01

The demand of high power diode lasers in the range of 910-980nm is regularly growing. This kind of device for many applications, such as fiber laser pumping [1], material processing [1], solid-state laser pumping [1], defense and medical/dental. The key role of this device lies in the efficiency (𝜂𝐸) of converting input electrical power into output optical power. The high value of 𝜂𝐸 allows high power level and reduces the need in heat dissipation. The requirement of wavelength stabilization with temperature is more obvious in the case of multimode 975nm diode lasers used for pumping Yb, Er and Yb/Er co-doped solid-state lasers, due to the narrow absorption line close to this wavelength. Such spectral width property (<1 nm), combined with wavelength thermal stabilization (0.07 𝑛𝑚 • °𝐶-1), provided by a uniform distributed feedback grating (DFB) introduced by etching and re-growth process techniques, is achievable in high power diode lasers using optical feedback. This paper reports on the development of the diode laser structure and the process techniques required to write the gratings taking into account of the thermal dissipation and optical performances. Performances are particularly determined in terms of experimental electro-optical characterizations. One of the main objectives is to determine the thermal resistance of the complete assembly to ensure the mastering of the diode laser temperature for operating condition. The classical approach to determine junction temperature is based on the infrared thermal camera, the spectral measurement and the pulse electrical method. In our case, we base our measurement on the spectral measurement but this approach is not well adapted to the high power diodes laser studied. We develop a new measurement based on the pulse electrical method and using the T3STERequipment. This method is well known for electronic devices and LEDs but is weakly developed for the high power diodes laser. This crucial measurement compared to spectral one is critical for understand the thermal management of diode laser device and improve the structure based on design for reliability. To have a perfect relation between structure, and their modification, and temperature, FEM simulations are performed using COMSOL software. In this case, we can understand the impact of structure on the isothermal distribution and then reveal the sensitive zones in the diode laser. To validate the simulation, we compare the simulation results to the experimental one and develop an analytical model to determine the different contributions of the thermal heating. This paper reports on the development laser structure and the process techniques required to write the gratings. Performances are particularly characterized in terms of experimental electro-optical characterization and spectral response. The extraction of thermal resistance (Rth) is particularly difficult, because of the implicit low value (Rth ≈ 2𝐾/𝑊) and the multimodal nature of the diode laser. In such a context, thermal resistance has been measured using a dedicated equipment namely T3STER©. The results have been compared with those given by the well-known technique achieved from the spectrum of the diode laser (central wavelength variations vs temperature) that is more difficult to apply for multimodal diodes laser. The last section deals with thermal simulations based on finite elements method (FEM) modeling in order to estimate junction temperature . This study represent a significant part of the general Design for Reliability (DfR) effort carried out on such devices to produce efficient and reliable high power devices at the industrial level.

Electrical properties of epitaxial 3C- and 6H-SiC p-n junction diodes produced side-by-side on 6H-SiC substrates

NASA Technical Reports Server (NTRS)

Neudeck, Philip G.; Larkin, David J.; Starr, Jonathan E.; Powell, J. Anthony; Salupo, Carl S.; Matus, Lawrence G.

1994-01-01

3C-SiC (beta-SiC) and 6H-SiC p-n junction diodes have been fabricated in regions of both 3C-SiC and 6H-SiC epitaxial layers which were grown side-by-side on low-tilt-angle 6H-SiC substrates via a chemical vapor deposition (CVD) process. Several runs of diodes exhibiting state-of-the-art electrical characteristics were produced, and performance characteristics were measured and compared as a function of doping, temperature, and polytype. The first 3C-SiC diodes which rectify to reverse voltages in excess of 300 V were characterized, representing a six-fold blocking voltage improvement over experimental 3C-SiC diodes produced by previous techniques. When placed under sufficient forward bias, the 3C-SiC diodes emit significantly bright green-yellow light while the 6H-SiC diodes emit in the blue-violet. The 6H-SiC p-n junction diodes represent the first reported high-quality 6H-SiC devices to be grown by CVD on very low-tilt-angle (less than 0.5 deg off the (0001) silicon face) 6H substrates. The reverse leakage current of a 200 micron diameter circular device at 1100 V reverse bias was less than 20 nA at room temperature, and excellent rectification characteristics were demonstrated at the peak characterization temperature of 400 C.

Experimental research on time-resolved evolution of cathode plasma expansion velocity in a long pulsed magnetically insulated coaxial diode

NASA Astrophysics Data System (ADS)

Zhu, Danni; Zhang, Jun; Zhong, Huihuang; Ge, Xingjun; Gao, Jingming

2018-02-01

Unlike planar diodes, separate research of the axial and radial plasma expansion velocities is difficult for magnetically insulated coaxial diodes. Time-resolved electrical diagnostic which is based on the voltage-ampere characteristics has been employed to study the temporal evolution of the axial and radial cathode plasma expansion velocities in a long pulsed magnetically insulated coaxial diode. Different from a planar diode with a "U" shaped profile of temporal velocity evolution, the temporal evolution trend of the axial expansion velocity is proved to be a "V" shaped profile. Apart from the suppression on the radial expansion velocity, the strong magnetic field is also conducive to slowing down the axial expansion velocity. Compared with the ordinary graphite cathode, the carbon velvet and graphite composite cathode showed superior characteristics as judged by the low plasma expansion velocity and long-term electrical stability as a promising result for applications where long-pulsed and reliable operation at high power is required.

Modeling and simulation of the shading effect on the performance of a photovoltaic module in the presence of the bypass diode.

NASA Astrophysics Data System (ADS)

Zebiri, Mohamed; Mediouni, Mohamed; Idadoub, Hicham

2018-05-01

In photovoltaic renewable energy production systems where production is dependent on weather conditions, maintaining production at a suitable level is more than essential. The shading effect in photovoltaic panels affects the production of electrical energy by reducing it or even causing the destruction of some or all of the panels. To circumvent this problem, among the solutions proposed in the literature we find the use of by-pass diode and anti-return diode to minimize these consequences.In this paper we present a simulation under Matlab-Simulink of the shading effect and we compare the current voltages characteristics (I-V) and power voltage (P-V) of a photovoltaic system for different irradiations in the presence and absence of diode by -pass. For modeling, we will use the diode model and the Lambert W-function to solve the implicit equation of the output current. This method allows you to analyze the performance of a panel at different shading levels.

Solid Sampling with a Diode Laser for Portable Ambient Mass Spectrometry

PubMed Central

2017-01-01

A hand-held diode laser is implemented for solid sampling in portable ambient mass spectrometry (MS). Specifically, a pseudocontinuous wave battery-powered surgical laser diode is employed for portable laser diode thermal desorption (LDTD) at 940 nm and compared with nanosecond pulsed laser ablation at 2940 nm. Postionization is achieved in both cases using atmospheric pressure photoionization (APPI). The laser ablation atmospheric pressure photoionization (LAAPPI) and LDTD-APPI mass spectra of sage leaves (Salvia officinalis) using a field-deployable quadrupole ion trap MS display many similar ion peaks, as do the mass spectra of membrane grown biofilms of Pseudomonas aeruginosa. These results indicate that LDTD-APPI method should be useful for in-field sampling of plant and microbial communities, for example, by portable ambient MS. The feasibility of many portable MS applications is facilitated by the availability of relatively low cost, portable, battery-powered diode lasers. LDTD could also be coupled with plasma- or electrospray-based ionization for the analysis of a variety of solid samples. PMID:28632988

Solid Sampling with a Diode Laser for Portable Ambient Mass Spectrometry.

PubMed

Yung, Yeni P; Wickramasinghe, Raveendra; Vaikkinen, Anu; Kauppila, Tiina J; Veryovkin, Igor V; Hanley, Luke

2017-07-18

A hand-held diode laser is implemented for solid sampling in portable ambient mass spectrometry (MS). Specifically, a pseudocontinuous wave battery-powered surgical laser diode is employed for portable laser diode thermal desorption (LDTD) at 940 nm and compared with nanosecond pulsed laser ablation at 2940 nm. Postionization is achieved in both cases using atmospheric pressure photoionization (APPI). The laser ablation atmospheric pressure photoionization (LAAPPI) and LDTD-APPI mass spectra of sage leaves (Salvia officinalis) using a field-deployable quadrupole ion trap MS display many similar ion peaks, as do the mass spectra of membrane grown biofilms of Pseudomonas aeruginosa. These results indicate that LDTD-APPI method should be useful for in-field sampling of plant and microbial communities, for example, by portable ambient MS. The feasibility of many portable MS applications is facilitated by the availability of relatively low cost, portable, battery-powered diode lasers. LDTD could also be coupled with plasma- or electrospray-based ionization for the analysis of a variety of solid samples.

Efficacy and safety of a diode laser in second-stage implant surgery: a comparative study.

PubMed

El-Kholey, K E

2014-05-01

For more than a decade, peri-implant tissues have been treated with soft tissue lasers to create a bloodless flap for implant placement and to uncover implants with minimal bleeding, trauma, and anaesthesia. This study was designed to assess if dental implant uncovering is possible with a diode laser without anaesthesia, and to compare its performance with traditional cold scalpel surgery. Thirty patients with a total of 45 completely osseointegrated implants participated in this study. Patients were divided into two groups. For the study group, second-stage implant surgery was done with a 970nm diode laser. For the control group, the implants were exposed with a surgical blade. Certain parameters were used for evaluation of the two techniques. The use of the diode laser obviated the need for local anaesthesia; there was a significant difference between the two groups regarding the need for anaesthesia (P<0.0001). However, there were no significant differences between the two techniques regarding duration of surgery, postoperative pain, time for healing, and success of the implants. The diode laser can be used effectively for second-stage implant surgery, providing both the dentist and the patient with additional advantages over the conventional methods used for implant exposure. Copyright © 2013 International Association of Oral and Maxillofacial Surgeons. Published by Elsevier Ltd. All rights reserved.

SUBTHRESHOLD MICROPULSE DIODE LASER VERSUS CONVENTIONAL LASER PHOTOCOAGULATION FOR DIABETIC MACULAR EDEMA: A Meta-Analysis of Randomized Controlled Trials.

PubMed

Chen, Guohai; Tzekov, Radouil; Li, Wensheng; Jiang, Fangzheng; Mao, Sihong; Tong, Yuhua

2016-11-01

To evaluate the relative efficacy of subthreshold micropulse diode laser versus conventional laser photocoagulation for the treatment of diabetic macular edema. A comprehensive literature search was conducted to find relevant randomized controlled trials (RCTs). Efficacy estimates were determined by comparing weighted mean differences of the mean change of best-corrected visual acuity and central macular thickness from baseline. Six RCTs were selected for this meta-analysis, including 398 eyes (203 eyes in the subthreshold micropulse diode laser group and 195 eyes in the conventional laser group). Subthreshold micropulse diode laser was superior to conventional laser in terms of mean change of logMAR best-corrected visual acuity at 3, 9, and 12 months after treatment (P = 0.02; P = 0.04, and P = 0.03, respectively), and it showed a similar trend at 6 months (P = 0.05). Although, there was no significant difference in terms of mean change in central macular thickness from baseline to 3, 6, 9, or 12 months (P = 0.80; P = 0.20; P = 0.88, and P = 0.86, respectively). Subthreshold micropulse diode laser treatment resulted in better visual acuity compared with conventional laser, although the differences before 12 months are likely to be too small to be of clinical relevance and may be dependent on baseline best-corrected visual acuity. The two types of treatment seem to have similar anatomical outcome.

Generation conditions of CW Diode Laser Sustained Plasma

NASA Astrophysics Data System (ADS)

Nishimoto, Koji; Matsui, Makoto; Ono, Takahiro

2016-09-01

Laser sustained plasma was generated using 1 kW class continuous wave diode laser. The laser beam was focused on the seed plasma generated by arc discharge in 1 MPa xenon lamp. The diode laser has advantages of high energy conversion efficiency of 80%, ease of maintenance, compact size and availability of conventional quartz based optics. Therefore, it has a prospect of further development compared with conventional CO2 laser. In this study, variation of the plasma shape caused by laser power is observed and also temperature distribution in the direction of plasma radius is measured by optical emission spectroscopy.

Stimulated emission in quantum well laser diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Blood, P.

1989-07-03

We observe that stimulated emission from inhomogeneously pumped quantum well laser diodes is shifted down in energy compared with the subband transition energy. Measured spontaneous emission spectra show that this stimulated emission is due to band-to-band transitions shifted by renormalization at high injected carrier densities, and we suggest that this same mechanism explains reported observations of stimulated emission from inhomogeneously photopumped structures which previously have been interpreted as evidence for longitudinal optic (LO) phonon participation. We show that LO phonon participation cannot account for the photon energy of stimulated emission from conventional homogeneously pumped quantum well laser diodes.

InGaP alpha voltaic batteries: Synthesis, modeling, and radiation tolerance

NASA Astrophysics Data System (ADS)

Cress, Cory D.; Landi, Brian J.; Raffaelle, Ryne P.; Wilt, David M.

2006-12-01

The viability of InGaP diodes coupled with α-particle sources as radioisotope power supplies is investigated both theoretically and experimentally. The electrical power output of epitaxially grown InGaP p-type/n-type (p/n) junction diodes coupled with Am241 and Po210 α-particle sources was measured. A theoretical model was developed that determines the α-particle energy deposition profile within an InGaP diode when irradiated by an omnidirectional α-particle source. The results of the model illustrate the dramatic influence the radiation source/diode configuration has on the α-particle energy deposition profile within a device. Progress has been shown towards increasing the radiation tolerance of the InGaP devices, which included utilizing an intrinsic region and reducing the junction thickness. Introduction of the intrinsic region within a conventional n /p diode to form a n-type/intrinsic/p-type diode enabled the device to withstand a ten times greater fluence of 4.2MeV α particles before decreasing to 50% of its original power output under simulated air mass zero illumination, when compared to an abrupt junction device with the same active region thickness.

Comparison of Alexandrite and Diode Lasers for Hair Removal in Dark and Medium Skin: Which is Better?

PubMed Central

Mustafa, Farhad Hamad; Jaafar, Mohamad Suhimi; Ismail, Asaad Hamid; Mutter, Kussay Nugamesh

2014-01-01

Introduction: To improve laser hair removal (LHR) for dark skin, the fluence rate reaching the hair follicle in LHR is important. This paper presents the results of a comparative study examining the function of wavelength on dark skin types using 755 nm alexandrite and 810 nm diode lasers. Methods: The structure of the skin was created using a realistic skin model by the Advanced Systems Analysis Program. Result: In this study, the alexandrite laser (755 nm) and diode laser (810 nm) beam–skin tissue interactions were simulated. The simulation results for both lasers differed. The transmission ratio of the diode laser to the dark skin dermis was approximately 4% more than that of the alexandrite laser for the same skin type. For the diode laser at skin depth z = 0.67 mm, the average transmission ratios of both samples were 36% and 27.5%, but those for the alexandrite laser at the same skin depth were 32% and 25%. Conclusion: Both lasers were suitable in LHR for dark skin types, but the diode laser was better than the alexandrite laser because the former could penetrate deeper into the dermis layer. PMID:25653820

Comparison of Alexandrite and Diode Lasers for Hair Removal in Dark and Medium Skin: Which is Better?

PubMed

Mustafa, Farhad Hamad; Jaafar, Mohamad Suhimi; Ismail, Asaad Hamid; Mutter, Kussay Nugamesh

2014-01-01

To improve laser hair removal (LHR) for dark skin, the fluence rate reaching the hair follicle in LHR is important. This paper presents the results of a comparative study examining the function of wavelength on dark skin types using 755 nm alexandrite and 810 nm diode lasers. The structure of the skin was created using a realistic skin model by the Advanced Systems Analysis Program. In this study, the alexandrite laser (755 nm) and diode laser (810 nm) beam-skin tissue interactions were simulated. The simulation results for both lasers differed. The transmission ratio of the diode laser to the dark skin dermis was approximately 4% more than that of the alexandrite laser for the same skin type. For the diode laser at skin depth z = 0.67 mm, the average transmission ratios of both samples were 36% and 27.5%, but those for the alexandrite laser at the same skin depth were 32% and 25%. Both lasers were suitable in LHR for dark skin types, but the diode laser was better than the alexandrite laser because the former could penetrate deeper into the dermis layer.

Self-tuning method for monitoring the density of a gas vapor component using a tunable laser

DOEpatents

Hagans, Karla; Berzins, Leon; Galkowski, Joseph; Seng, Rita

1996-01-01

The present invention relates to a vapor density monitor and laser atomic absorption spectroscopy method for highly accurate, continuous monitoring of vapor densities, composition, flow velocity, internal and kinetic temperatures and constituent distributions. The vapor density monitor employs a diode laser, preferably of an external cavity design. By using a diode laser, the vapor density monitor is significantly less expensive and more reliable than prior art vapor density monitoring devices. In addition, the compact size of diode lasers enables the vapor density monitor to be portable. According to the method of the present invention, the density of a component of a gas vapor is calculated by tuning the diode laser to a frequency at which the amount of light absorbed by the component is at a minimum or a maximum within about 50 MHz of that frequency. Laser light from the diode laser is then transmitted at the determined frequency across a predetermined pathlength of the gas vapor. By comparing the amount of light transmitted by the diode laser to the amount of light transmitted after the laser light passes through the gas vapor, the density of the component can be determined using Beer's law.

Self-tuning method for monitoring the density of a gas vapor component using a tunable laser

DOEpatents

Hagans, K.; Berzins, L.; Galkowski, J.; Seng, R.

1996-08-27

The present invention relates to a vapor density monitor and laser atomic absorption spectroscopy method for highly accurate, continuous monitoring of vapor densities, composition, flow velocity, internal and kinetic temperatures and constituent distributions. The vapor density monitor employs a diode laser, preferably of an external cavity design. By using a diode laser, the vapor density monitor is significantly less expensive and more reliable than prior art vapor density monitoring devices. In addition, the compact size of diode lasers enables the vapor density monitor to be portable. According to the method of the present invention, the density of a component of a gas vapor is calculated by tuning the diode laser to a frequency at which the amount of light absorbed by the component is at a minimum or a maximum within about 50 MHz of that frequency. Laser light from the diode laser is then transmitted at the determined frequency across a predetermined pathlength of the gas vapor. By comparing the amount of light transmitted by the diode laser to the amount of light transmitted after the laser light passes through the gas vapor, the density of the component can be determined using Beer`s law. 6 figs.

High power diode lasers emitting from 639 nm to 690 nm

NASA Astrophysics Data System (ADS)

Bao, L.; Grimshaw, M.; DeVito, M.; Kanskar, M.; Dong, W.; Guan, X.; Zhang, S.; Patterson, J.; Dickerson, P.; Kennedy, K.; Li, S.; Haden, J.; Martinsen, R.

2014-03-01

There is increasing market demand for high power reliable red lasers for display and cinema applications. Due to the fundamental material system limit at this wavelength range, red diode lasers have lower efficiency and are more temperature sensitive, compared to 790-980 nm diode lasers. In terms of reliability, red lasers are also more sensitive to catastrophic optical mirror damage (COMD) due to the higher photon energy. Thus developing higher power-reliable red lasers is very challenging. This paper will present nLIGHT's released red products from 639 nm to 690nm, with established high performance and long-term reliability. These single emitter diode lasers can work as stand-alone singleemitter units or efficiently integrate into our compact, passively-cooled Pearl™ fiber-coupled module architectures for higher output power and improved reliability. In order to further improve power and reliability, new chip optimizations have been focused on improving epitaxial design/growth, chip configuration/processing and optical facet passivation. Initial optimization has demonstrated promising results for 639 nm diode lasers to be reliably rated at 1.5 W and 690nm diode lasers to be reliably rated at 4.0 W. Accelerated life-test has started and further design optimization are underway.

Evaluation of the dosimetric properties of a diode detector for small field proton radiosurgery

PubMed Central

Teran, Anthony V.; Slater, Jerry D.; Slater, James M.; Wroe, Andrew J.

2015-01-01

The small fields and sharp gradients typically encountered in proton radiosurgery require high spatial resolution dosimetric measurements, especially below 1–2 cm diameters. Radiochromic film provides high resolution, but requires postprocessing and special handling. Promising alternatives are diode detectors with small sensitive volumes (SV) that are capable of high resolution and real‐time dose acquisition. In this study we evaluated the PTW PR60020 proton dosimetry diode using radiation fields and beam energies relevant to radiosurgery applications. Energies of 127 and 157 MeV (9.7 to 15 cm range) and initial diameters of 8, 10, 12, and 20 mm were delivered using single‐stage scattering and four modulations (0, 15, 30, and 60 mm) to a water tank in our treatment room. Depth dose and beam profile data were compared with PTW Markus N23343 ionization chamber, EBT2 Gafchromic film, and Monte Carlo simulations. Transverse dose profiles were measured using the diode in "edge‐on" orientation or EBT2 film. Diode response was linear with respect to dose, uniform with dose rate, and showed an orientation‐dependent (i.e., beam parallel to, or perpendicular to, detector axis) response of less than 1%. Diode vs. Markus depth‐dose profiles, as well as Markus relative dose ratio vs. simulated dose‐weighted average lineal energy plots, suggest that any LET‐dependent diode response is negligible from particle entrance up to the very distal portion of the SOBP for the energies tested. Finally, while not possible with the ionization chamber due to partial volume effects, accurate diode depth‐dose measurements of 8, 10, and 12 mm diameter beams were obtained compared to Monte Carlo simulations. Because of the small SV that allows measurements without partial volume effects and the capability of submillimeter resolution (in edge‐on orientation) that is crucial for small fields and high‐dose gradients (e.g., penumbra, distal edge), as well as negligible LET dependence over nearly the full the SOBP, the PTW proton diode proved to be a useful high‐resolution, real‐time metrology device for small proton field radiation measurements such as would be encountered in radiosurgery applications. PACS numbers: 87.56.‐v, 87.56.jf, 87.56.Fc PMID:26699554

Evaluation of the dosimetric properties of a diode detector for small field proton radiosurgery.

PubMed

McAuley, Grant A; Teran, Anthony V; Slater, Jerry D; Slater, James M; Wroe, Andrew J

2015-11-08

The small fields and sharp gradients typically encountered in proton radiosurgery require high spatial resolution dosimetric measurements, especially below 1-2 cm diameters. Radiochromic film provides high resolution, but requires postprocessing and special handling. Promising alternatives are diode detectors with small sensitive volumes (SV) that are capable of high resolution and real-time dose acquisition. In this study we evaluated the PTW PR60020 proton dosimetry diode using radiation fields and beam energies relevant to radiosurgery applications. Energies of 127 and 157 MeV (9.7 to 15 cm range) and initial diameters of 8, 10, 12, and 20mm were delivered using single-stage scattering and four modulations (0, 15, 30, and 60mm) to a water tank in our treatment room. Depth dose and beam profile data were compared with PTW Markus N23343 ionization chamber, EBT2 Gafchromic film, and Monte Carlo simulations. Transverse dose profiles were measured using the diode in "edge-on" orientation or EBT2 film. Diode response was linear with respect to dose, uniform with dose rate, and showed an orientation-dependent (i.e., beam parallel to, or perpendicular to, detector axis) response of less than 1%. Diodevs. Markus depth-dose profiles, as well as Markus relative dose ratio vs. simulated dose-weighted average lineal energy plots, suggest that any LET-dependent diode response is negligible from particle entrance up to the very distal portion of the SOBP for the energies tested. Finally, while not possible with the ionization chamber due to partial volume effects, accurate diode depth-dose measurements of 8, 10, and 12 mm diameter beams were obtained compared to Monte Carlo simulations. Because of the small SV that allows measurements without partial volume effects and the capability of submillimeter resolution (in edge-on orientation) that is crucial for small fields and high-dose gradients (e.g., penumbra, distal edge), as well as negligible LET dependence over nearly the full the SOBP, the PTW proton diode proved to be a useful high-resolution, real-time metrology device for small proton field radiation measurements such as would be encountered in radiosurgery applications.

Diode-pumped DUV cw all-solid-state laser to replace argon ion lasers

NASA Astrophysics Data System (ADS)

Zanger, Ekhard; Liu, B.; Gries, Wolfgang

2000-04-01

The slim series DELTATRAINTM-worldwide the first integrated cw diode-pumped all-solid-state DUV laser at 266 nm with a compact, slim design-has been developed. The slim design minimizes the DUV DPSSL footprint and thus greatly facilitates the replacement of commonly used gas ion lasers, including these with intra-cavity frequency doubling, in numerous industrial and scientific applications. Such a replacement will result in an operation cost reduction by several thousands US$DLR each year for one unit. Owing to its unique geometry-invariant frequency doubling cavity- based on the LAS patent-pending DeltaConcept architecture- this DUV laser provides excellent beam-pointing stability of <2 (mu) rad/ degree(s)C and power stability of <2%. The newest design of the cavity block has adopted a cemented resonator with each component positioned precisely inside a compact monolithic metal block. The automatic and precise crystal shifter ensures long operation lifetime of > 5000 hours of whole 266 nm laser. The microprocessor controlled power supply provides an automatic control of the whole 266 nm laser, making this DUV laser a hands-off system which can meet tough requirements posed by numerous industrial and scientific applications. It will replace the commonplace ion laser as the future DUV laser of choice.

Role of diode lasers (800-980 nm) as adjuncts to scaling and root planing in the treatment of chronic periodontitis: a systematic review.

PubMed

Qadri, Talat; Javed, Fawad; Johannsen, Gunnar; Gustafsson, Anders

2015-11-01

The purpose of this study was to systematically review currently available evidence regarding the role of diode lasers (810-980 nm) as adjuncts to scaling and root planing (SRP) in the treatment of chronic periodontitis (CP). Mechanical instrumentation of periodontal tissues followed by diode laser application leads to complete removal of pocket epithelium compared with conventional SRP. To address the focused question "Is SRP with adjunct diode lasers (810-980 nm) therapy more effective in the treatment of CP than when CP is treated by SRP alone?" databases were searched using the following key words: chronic periodontitis, diode laser, surgical, AND scaling and root planing, periodontal diseases, periodontal therapy, AND periodontal treatment. Original studies were included. Letters to the editor, case reports, commentaries, and reviews were excluded. Ten clinical studies were included. In all studies, patients were systemically healthy, and cigarette smokers were included in two studies. In five studies, SRP plus diode laser application was more effective in the treatment of CP than SRP, and three studies showed no difference. In two studies, there was a moderate reduction in periodontal inflammation using SRP plus diode laser. The diameter of optic fiber, laser wavelengths, power, pulse repetition rate, and duration of laser exposure ranged between 300 μm and 2 mm, 810-980 nm, 0.8-2.5 W, 10-60 Hz, and 10-100 ms, respectively. In CP patients with probing depths ≤5 mm, diode lasers, SRP plus diode laser (800-980 nm) is more effective in the treatment of CP than when SRP is used alone.

Numerical Modeling of Fluorescence Emission Energy Dispersion in Luminescent Solar Concentrator

NASA Astrophysics Data System (ADS)

Li, Lanfang; Sheng, Xing; Rogers, John; Nuzzo, Ralph

2013-03-01

We present a numerical modeling method and the corresponding experimental results, to address fluorescence emission dispersion for applications such as luminescent solar concentrator and light emitting diode color correction. Previously established modeling methods utilized a statistic-thermodynamic theory (Kenard-Stepnov etc.) that required a thorough understanding of the free energy landscape of the fluorophores. Some more recent work used an empirical approximation of the measured emission energy dispersion profile without considering anti-Stokes shifting during absorption and emission. In this work we present a technique for modeling fluorescence absorption and emission that utilizes the experimentally measured spectrum and approximates the observable Frank-Condon vibronic states as a continuum and takes into account thermodynamic energy relaxation by allowing thermal fluctuations. This new approximation method relaxes the requirement for knowledge of the fluorophore system and reduces demand on computing resources while still capturing the essence of physical process. We present simulation results of the energy distribution of emitted photons and compare them with experimental results with good agreement in terms of peak red-shift and intensity attenuation in a luminescent solar concentrator. This work is supported by the DOE `Light-Material Interactions in Energy Conversion' Energy Frontier Research Center under grant DE-SC0001293.

SU-F-T-582: Small Field Dosimetry in Radiosurgery Collimators with a Stealth Chamber

DOE Office of Scientific and Technical Information (OSTI.GOV)

Azcona, J; Barbes, B

2016-06-15

Purpose: The extraction of a reference signal for measuring small fields in scanning mode can be problematic. In this work we describe the use of a transmission chamber in small field dosimetry for radiosurgery collimators and compare TMR curves obtained with stereotactic diode and microionization chamber. Methods: Four radiosurgery cones of diameters 5, 10, 12.5, and 15mm supplied by Elekta Medical were commissioned in a 6MV FFF beam from an Elekta Versa linac. A transmission chamber manufactured by IBA (Stealth chamber) was attached to the lower part of the collimators and used for PDD and profile measurements in scanning modemore » with a Scanditronix stereotactic diode. It was also used for centering the stereotactic diode in the water tank to measure TMR and output factors, by integrating the signal. TMR measurements for all collimators and the OF for the largest collimator were also acquired on a polystyrene PTW 29672 phantom with a PTW PinPoint 3D chamber 0.016 cm3 volume. Results: Measured TMR with diode and microionization chamber agreed very well with differences larger than 1% only for depths above 15cm, except the smaller collimator, for which differences were always smaller than 2%. Calculated TMR were significantly different (up to 7%) from measured TMR. The differences are attributed to the change in response of the diode with depth, because the effective field aperture varies with depth. Furthermore, neglecting the ratio of phantom-scatter factors in the conversion formula also contributes to this difference. OF measured with diode and chamber showed a difference of 3.5%. Conclusion: The transmission chamber overcomes the problem of extracting a reference signal and is of great help for small field commissioning. Calculating TMR from PDD is strongly discouraged. Good agreement was found when comparing measurements of TMR with stereotactic diode in water with measurements with microionization chamber in polystyrene.« less

Novel power MOSFET-based expander for high frequency ultrasound systems.

PubMed

Choi, Hojong; Shung, K Kirk

2014-01-01

The function of an expander is to obstruct the noise signal transmitted by the pulser so that it does not pass into the transducer or receive electronics, where it can produce undesirable ring-down in an ultrasound imaging application. The most common type is a diode-based expander, which is essentially a simple diode-pair, is widely used in pulse-echo measurements and imaging applications because of its simple architecture. However, diode-based expanders may degrade the performance of ultrasonic transducers and electronic components on the receiving and transmitting sides of the ultrasound systems, respectively. Since they are non-linear devices, they cause excessive signal attenuation and noise at higher frequencies and voltages. In this paper, a new type of expander that utilizes power MOSFET components, which we call a power MOSFET-based expander, is introduced and evaluated for use in high frequency ultrasound imaging systems. The performance of a power MOSFET-based expander was evaluated relative to a diode-based expander by comparing the noise figure (NF), insertion loss (IL), total harmonic distortion (THD), response time (RT), electrical impedance (EI) and dynamic power consumption (DPC). The results showed that the power MOSFET-based expander provided better NF (0.76 dB), IL (-0.3 dB) and THD (-62.9 dB), and faster RT (82 ns) than did the diode-based expander (NF (2.6 dB), IL (-1.4 dB), THD (-56.0 dB) and RT (119 ns)) at 70 MHz. The -6 dB bandwidth and the peak-to-peak voltage of the echo signal received by the transducer using the power MOSFET-based expander improved by 17.4% and 240% compared to the diode-based expander, respectively. The new power MOSFET-based expander was shown to yield lower NF, IL and THD, faster RT and lower ring down than the diode-based expander at the expense of higher dynamic power consumption. Copyright © 2013 Elsevier B.V. All rights reserved.

Novel Power MOSFET-Based Expander for High Frequency Ultrasound Systems

PubMed Central

Choi, Hojong; Shung, K. Kirk

2014-01-01

The function of an expander is to obstruct the noise signal transmitted by the pulser so that it does not pass into the transducer or receive electronics, where it can produce undesirable ring-down in an ultrasound imaging application. The most common type is a diode-based expander, which is essentially a simple diode-pair, is widely used in pulse-echo measurements and imaging applications because of its simple architecture. However, diode-based expanders may degrade the performance of ultrasonic transducers and electronic components on the receiving and transmitting sides of the ultrasound systems, respectively. Since they are non-linear devices, they cause excessive signal attenuation and noise at higher frequencies and voltages. In this paper, a new type of expander that utilizes power MOSFET components, which we call a power MOSFET-based expander, is introduced and evaluated for use in high frequency ultrasound imaging systems. The performance of a power MOSFET-based expander was evaluated relative to a diode-based expander by comparing the noise figure (NF), insertion loss (IL), total harmonic distortion (THD), response time (RT), electrical impedance (EI) and dynamic power consumption (DPC). The results showed that the power MOSFET-based expander provided better NF (0.76 dB), IL (-0.3 dB) and THD (-62.9 dB), and faster RT (82 ns) than did the diode-based expander (NF (2.6 dB), IL (-1.4 dB), THD (-56.0 dB) and RT (119 ns)) at 70 MHz. The -6 dB bandwidth and the peak-to-peak voltage of the echo signal received by the transducer using the power MOSFET-based expander improved by 17.4 % and 240 % compared to the diode-based expander, respectively. The new power MOSFET-based expander was shown to yield lower NF, IL and THD, faster RT and lower ring down than the diode-based expander at the expense of higher dynamic power consumption. PMID:23835308

Lead Halide Perovskite Photovoltaic as a Model p-i-n Diode.

PubMed

Miyano, Kenjiro; Tripathi, Neeti; Yanagida, Masatoshi; Shirai, Yasuhiro

2016-02-16

The lead halide perovskite photovoltaic cells, especially the iodide compound CH3NH3PbI3 family, exhibited enormous progress in the energy conversion efficiency in the past few years. Although the first attempt to use the perovskite was as a sensitizer in a dye-sensitized solar cell, it has been recognized at the early stage of the development that the working of the perovskite photovoltaics is akin to that of the inorganic thin film solar cells. In fact, theoretically perovskite is always treated as an ordinary direct band gap semiconductor and hence the perovskite photovoltaics as a p-i-n diode. Despite this recognition, research effort along this line of thought is still in pieces and incomplete. Different measurements have been applied to different types of devices (different not only in the materials but also in the cell structures), making it difficult to have a coherent picture. To make the situation worse, the perovskite photovoltaics have been plagued by the irreproducible optoelectronic properties, most notably the sweep direction dependent current-voltage relationship, the hysteresis problem. Under such circumstances, it is naturally very difficult to analyze the data. Therefore, we set out to make hysteresis-free samples and apply time-tested models and numerical tools developed in the field of inorganic semiconductors. A series of electrical measurements have been performed on one type of CH3NH3PbI3 photovoltaic cells, in which a special attention was paid to ensure that their electronic reproducibility was better than the fitting error in the numerical analysis. The data can be quantitatively explained in terms of the established models of inorganic semiconductors: current/voltage relationship can be very well described by a two-diode model, while impedance spectroscopy revealed the presence of a thick intrinsic layer with the help of a numerical solver, SCAPS, developed for thin film solar cell analysis. These results point to that CH3NH3PbI3 is an ideal intrinsic semiconductor, which happens to be very robust against accidental doping, and that the perovskite photovoltaic cell is in fact a model p-i-n diode. The analytical methods and diagnostic tools available in the inorganic semiconductor PV cells are useful and should be fully exploited in the effort of improving the efficiency. One outstanding question is why the perovskite stays intrinsic. Considering the defects and impurities that must abound in the perovskite layers formed by the spin-coating process, for example, there must be physicochemical mechanism keeping it from being doped. This may be related to the special band structure making up the band gap in this ionic solid. Understanding the mechanism may open a door for the wider utility of this class of solid.

Evaluation of a silicon 5 MHz p–n diode actuator with a laterally vibrating extensional mode

NASA Astrophysics Data System (ADS)

Miyazaki, Fumito; Baba, Kazuki; Tanigawa, Hiroshi; Furutsuka, Takashi; Suzuki, Kenichiro

2018-05-01

In this paper, we describe p–n diode actuators that are laterally driven by the force induced in a depletion layer. The previously reported p–n diode actuators have been vertically driven. Because the resonant frequency depends on the thickness of the vibrating plate, the integration of resonators with different frequencies on a chip has been difficult. The resonators in this work are driven laterally by using length-extensional vibration. We have developed a compact model based on an analytical expression, in which p–n diode actuators are driven by the forces induced by the spread of the depletion layer. The deflection generated by the p–n diode actuators was proportional to the ratio of the depletion layer width to the resonator thickness as well as the position of the p–n junction. Good agreement of experimental results with the theory was confirmed by comparing the measured values for silicon p–n diode rectangular-plate actuators fabricated using a silicon-on-insulator (SOI) substrate. The displacement amplitude of the actuators was proportional to the DC bias, while the resonant frequency was independent of the DC bias. The latter characteristic is very different from that of widely used electrostatic actuators. Although the amplitude of the actuator measured in this work was very small, it is expected that the amplitude will increase greatly by increasing the doping of the p–n diode actuators.

Modulating dual-wavelength multiple quantum wells in white light emitting diodes to suppress efficiency droop and improve color rendering index

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhao, Yukun; Wang, Shuai; Zheng, Min

2015-10-14

In this paper, gallium nitride (GaN) based white light-emitting diodes (WLEDs) with modulated quantities of blue (In{sub 0.15}Ga{sub 0.85}N) quantum wells (QWs) and cyan QWs (In{sub 0.18}Ga{sub 0.82}N) in multiple QW (MQW) structures have been investigated numerically and experimentally. It is demonstrated that the optical performance of LEDs is sensitive to the quantities of cyan QWs in dual-wavelength MQW structures. Compared to the LEDs with respective 0, 4, and 8 cyan QWs (12 QWs in total), the optical performance of the sample with 6 cyan QWs is the best. The deterioration of the optical performance in the sample with lessmore » (4 pairs) cyan QWs or more (8 pairs) cyan QWs than 6 cyan QWs may be ascribed to weakened reservoir effect or more defects induced. Compared to conventional blue LEDs (12 blue QWs), the sample with 6 cyan QWs could effectively suppress the efficiency droop (the experimental droop ratio decreases from 50.3% to 39.5% at 80 A/cm{sup 2}) and significantly improve the color rendering index (CRI, increases from 66.4 to 77.0) simultaneously. We attribute the droop suppression to the strengthened reservoir effect and carrier confinement of deeper QWs (higher indium composition) incorporated in the dual-wavelength MQW structures, which lead to the better hole spreading and enhanced radiative recombination. Meanwhile, the remarkable experimental CRI improvement may result from the wider full-width at half-maximum of electroluminescence spectra and higher cyan intensity in WLED chips with dual-wavelength MQW structures.« less

High current density Esaki tunnel diodes based on GaSb-InAsSb heterostructure nanowires.

PubMed

Ganjipour, Bahram; Dey, Anil W; Borg, B Mattias; Ek, Martin; Pistol, Mats-Erik; Dick, Kimberly A; Wernersson, Lars-Erik; Thelander, Claes

2011-10-12

We present electrical characterization of broken gap GaSb-InAsSb nanowire heterojunctions. Esaki diode characteristics with maximum reverse current of 1750 kA/cm(2) at 0.50 V, maximum peak current of 67 kA/cm(2) at 0.11 V, and peak-to-valley ratio (PVR) of 2.1 are obtained at room temperature. The reverse current density is comparable to that of state-of-the-art tunnel diodes based on heavily doped p-n junctions. However, the GaSb-InAsSb diodes investigated in this work do not rely on heavy doping, which permits studies of transport mechanisms in simple transistor structures processed with high-κ gate dielectrics and top-gates. Such processing results in devices with improved PVR (3.5) and stability of the electrical properties.

Diode laser operating on an atomic transition limited by an isotope ⁸⁷Rb Faraday filter at 780 nm.

PubMed

Tao, Zhiming; Hong, Yelong; Luo, Bin; Chen, Jingbiao; Guo, Hong

2015-09-15

We demonstrate an extended cavity Faraday laser system using an antireflection-coated laser diode as the gain medium and the isotope (87)Rb Faraday anomalous dispersion optical filter (FADOF) as the frequency selective device. Using this method, the laser wavelength works stably at the highest transmission peak of the isotope (87)Rb FADOF over the laser diode current from 55 to 140 mA and the temperature from 15°C to 35°C. Neither the current nor the temperature of the laser diode has significant influence on the output frequency. Compared with previous extended cavity laser systems operating at frequencies irrelevant to spectacular atomic transition lines, the laser system realized here provides a stable laser source with the frequency operating on atomic transitions for many practical applications.

Millimeter distance effects of surface plasmon polaritons in electroformed Al-Al2O3-Ag diodes

NASA Astrophysics Data System (ADS)

Hickmott, T. W.

2017-02-01

Electroforming of metal-insulator-metal diodes is a soft dielectric breakdown that changes the high resistance of as-prepared diodes to a low resistance state. Electroforming of Al-Al2O3-metal diodes with anodic Al2O3 results in voltage-controlled negative resistance in the current-voltage (I-V) characteristics, electroluminescence (EL), and electron emission into vacuum (EM). EL is due to electrons injected at the Al-Al2O3 interface combining with radiative defects in Al2O3. Surface plasmon polaritons (SPPs) are electromagnetic waves that can be excited by photons or electrons. SPPs are confined to a metal-dielectric interface, cause large electric fields in the metal and dielectric, and have ranges of micrometers. The temperature dependence of I-V curves, EL, and EM of a group of electroformed Al-Al2O3-Ag diodes with Al2O3 thicknesses between 12 nm and 20 nm, group A, was measured between 200 K and 300 K. After a sequence of temperature measurements, the Al-Al2O3-Ag diodes, the Al-Al2O3 regions between diodes, and portions of the Ag on the glass region that provides contacts to the diodes are darkened. The range of darkening is >7 mm in a diode with 12 nm of Al2O3 and 2.0-3.5 mm in diodes with Al2O3 thicknesses between 14 nm and 20 nm. Darkening is attributed to the occurrence of SPPs generated by EL photons at the Ag-Al2O3 and Al-Al2O3 interfaces. The results are compared to a second group of Al-Al2O3-Ag diodes with identical Al2O3 thicknesses, group B, that were prepared in the same way as the diodes of group A except for a difference in the deposition of Al films for the two groups. Al-Al2O3-Ag diodes of group B exhibit enhanced EL, which is attributed to spontaneous emission of recombination centers in Al2O3 being enhanced by large electromagnetic fields that are due to SPPs that are generated by EL photons.

Comparative clinical evaluation of gallium-aluminum-arsenide diode laser and potassium nitrate in treating dentinal hypersensitivity

PubMed Central

Tevatia, Siddharth; Khatri, Vivek; Sharma, Nikhil; Dodwad, Vidya

2017-01-01

Context: Dentinal hypersensitivity (DH) is a chronic disorder in which patients report sharp and acute pain to a variety of stimuli. Till date, a standardized procedure to treat DH is missing, though several alternative treatment strategies have been designed, including laser therapies. Aim: The aim of the study was to treat DH with minimum chemical concentration and least laser energy level with longer follow-up period. Materials and Methods: One hundred and twenty patients were randomly divided into four groups: (i) Group 1-5% potassium nitrate (KNO3); (ii) Group 2 - gallium-aluminum-arsenide diode laser (62.2 J/cm2, wavelength - 980 nm, noncontact pulse mode, and power wattage - 0.5 W); (iii) Group 3 - combined 5% KNO3 and the diode laser; and (iv) Group 4 - placebo (control). The visual analog scale (VAS) scores were recorded, analyzed, and compared to tactile stimuli, cold water, and air blast tests at different intervals for 6 weeks. Results: Synergistic use of 5% KNO3 and diode laser (Group 3) significantly reduced the DH pain, which was almost negligible after 6th week (97%–99% of the pain was reported to be relieved) and showed promising results than any other studied groups. Further, the diode laser (Group 2) showed better results than 5% KNO3 (Group 1). One-way ANOVA and Bonferroni correction post hoc test revealed the combination of groups with significant differences in the mean VAS scores at the different interval of time (P < 0.01). Conclusions: Convincingly, the combined application of 5% KNO3 with the diode laser can be recommended for treating DH patients. PMID:29491586

Comparison between single-diode low-level laser therapy (LLLT) and LED multi-diode (cluster) therapy (LEDT) applications before high-intensity exercise.

PubMed

Leal Junior, Ernesto Cesar Pinto; Lopes-Martins, Rodrigo Alvaro Brandão; Baroni, Bruno Manfredini; De Marchi, Thiago; Rossi, Rafael Paolo; Grosselli, Douglas; Generosi, Rafael Abeche; de Godoi, Vanessa; Basso, Maira; Mancalossi, José Luis; Bjordal, Jan Magnus

2009-08-01

There is anecdotal evidence that low-level laser therapy (LLLT) may affect the development of muscular fatigue, minor muscle damage, and recovery after heavy exercises. Although manufacturers claim that cluster probes (LEDT) maybe more effective than single-diode lasers in clinical settings, there is a lack of head-to-head comparisons in controlled trials. This study was designed to compare the effect of single-diode LLLT and cluster LEDT before heavy exercise. This was a randomized, placebo-controlled, double-blind cross-over study. Young male volleyball players (n = 8) were enrolled and asked to perform three Wingate cycle tests after 4 x 30 sec LLLT or LEDT pretreatment of the rectus femoris muscle with either (1) an active LEDT cluster-probe (660/850 nm, 10/30 mW), (2) a placebo cluster-probe with no output, and (3) a single-diode 810-nm 200-mW laser. The active LEDT group had significantly decreased post-exercise creatine kinase (CK) levels (-18.88 +/- 41.48 U/L), compared to the placebo cluster group (26.88 +/- 15.18 U/L) (p < 0.05) and the active single-diode laser group (43.38 +/- 32.90 U/L) (p < 0.01). None of the pre-exercise LLLT or LEDT protocols enhanced performance on the Wingate tests or reduced post-exercise blood lactate levels. However, a non-significant tendency toward lower post-exercise blood lactate levels in the treated groups should be explored further. In this experimental set-up, only the active LEDT probe decreased post-exercise CK levels after the Wingate cycle test. Neither performance nor blood lactate levels were significantly affected by this protocol of pre-exercise LEDT or LLLT.

Time-and-space resolved comparison of plasma expansion velocities in high-power diodes with velvet cathodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang Jie; Shu Ting; Fan Yuwei

2013-01-28

Time-and-space resolved comparison of the expansion velocities of plasmas in the planar diode with cathodes made of carbon velvet and polymer velvet has been performed. The diode was powered by a 200 kV, 110 ns pulse, and the peak current density was nearly 477 A/cm{sup 2}. A four-channel high speed framing camera (HSFC) was used to observe the formation and subsequent movement of the cathode plasmas. More accurate and valuable information about the two-dimensional (radial and axial) velocity components of the cathode plasmas was also acquired by utilizing the digital image processing methods. Additionally, the perveance model based on themore » Child-Langmuir law was used to calculate the expansion velocities of the diode plasmas from voltage and current profiles. Results from the two diagnostics were compared. Comparing the average values of the radial and axial velocity components indicated that the former was much larger than the latter during the initial period of the current. It was also found that the radial velocity of the carbon velvet cathode (190 cm/{mu}s) was much larger than that (90 cm/{mu}s) of the polymer velvet cathode. Moreover, the average values of both the radial and axial velocity components of the carbon velvet cathode were typically in the range of 2.5 {+-} 1.5 cm/{mu}s, which were smaller than that of the polymer velvet cathode during the current flattop. These results, together with the comparison of calculated values from the perveance model, indicated that the diode with carbon velvet cathode was more robust as compared with the polymer velvet cathode for the same electron current densities.« less

Study on constant-step stress accelerated life tests in white organic light-emitting diodes.

PubMed

Zhang, J P; Liu, C; Chen, X; Cheng, G L; Zhou, A X

2014-11-01

In order to obtain reliability information for a white organic light-emitting diode (OLED), two constant and one step stress tests were conducted with its working current increased. The Weibull function was applied to describe the OLED life distribution, and the maximum likelihood estimation (MLE) and its iterative flow chart were used to calculate shape and scale parameters. Furthermore, the accelerated life equation was determined using the least squares method, a Kolmogorov-Smirnov test was performed to assess if the white OLED life follows a Weibull distribution, and self-developed software was used to predict the average and the median lifetimes of the OLED. The numerical results indicate that white OLED life conforms to a Weibull distribution, and that the accelerated life equation completely satisfies the inverse power law. The estimated life of a white OLED may provide significant guidelines for its manufacturers and customers. Copyright © 2014 John Wiley & Sons, Ltd.

A hole accelerator for InGaN/GaN light-emitting diodes

NASA Astrophysics Data System (ADS)

Zhang, Zi-Hui; Liu, Wei; Tan, Swee Tiam; Ji, Yun; Wang, Liancheng; Zhu, Binbin; Zhang, Yiping; Lu, Shunpeng; Zhang, Xueliang; Hasanov, Namig; Sun, Xiao Wei; Demir, Hilmi Volkan

2014-10-01

The quantum efficiency of InGaN/GaN light-emitting diodes (LEDs) has been significantly limited by the insufficient hole injection, and this is caused by the inefficient p-type doping and the low hole mobility. The low hole mobility makes the holes less energetic, which hinders the hole injection into the multiple quantum wells (MQWs) especially when a p-type AlGaN electron blocking layer (EBL) is adopted. In this work, we report a hole accelerator to accelerate the holes so that the holes can obtain adequate kinetic energy, travel across the p-type EBL, and then enter the MQWs more efficiently and smoothly. In addition to the numerical study, the effectiveness of the hole accelerator is experimentally shown through achieving improved optical output power and reduced efficiency droop for the proposed InGaN/GaN LED.

Maximizing ion current rectification in a bipolar conical nanopore fluidic diode using optimum junction location.

PubMed

Singh, Kunwar Pal

2016-10-12

The ion current rectification has been obtained as a function of the location of a heterojunction in a bipolar conical nanopore fluidic diode for different parameters to determine the junction location for maximum ion current rectification using numerical simulations. Forward current peaks for a specific location of the junction and reverse current decreases with the junction location due to a change in ion enrichment/depletion in the pore. The optimum location of the heterojunction shifts towards the tip with base/tip diameter and surface charge density, and towards the base with the electrolyte concentration. The optimum location of the heterojunction has been approximated by an equation as a function of pore length, base/tip diameter, surface charge density and electrolyte concentration. The study is useful to design a rectifier with maximum ion current rectification for practical purposes.

Design of 20 W fiber-coupled green laser diode by Zemax

NASA Astrophysics Data System (ADS)

Qi, Yunfei; Zhao, Pengfei; Wu, Yulong; Chen, Yongqi; Zou, Yonggang

2017-09-01

We represent a design of a 20 W, fiber-coupled diode laser module based on 26 single emitters at 520 nm. The module can produce more than 20 W output power from a standard fiber with core diameter of 400 μm and numerical aperture (NA) of 0.22. To achieve a 20 W laser beam, the spatial beam combination and polarization beam combination by polarization beam splitter are used to combine output of 26 single emitters into a single beam, and then an aspheric lens is used to couple the combined beam into an optical fiber. The simulation shows that the total coupling efficiency is more than 95%. Project supported by the National Key R& D Program of China (No. 2016YFB0402105), the Key Deployment Program of the Chinese Academy of Sciences (No. KGZD-SW-T01-2), and the National Natural Science Foundation of China (No. 61404135).

Airborne Measurements of Formaldehyde Employing a Tunable Diode Laser Absorption Spectrometer During TRACE-P

NASA Technical Reports Server (NTRS)

Fried, Alan; Drummond, James

2003-01-01

This final report summarizes the progress achieved over the entire 3-year proposal period including two extensions spanning 1 year. These activities include: 1) Preparation for and participation in the NASA 2001 TRACE-P campaign using our airborne tunable diode laser system to acquire measurements of formaldehyde (CH2O); 2) Comprehensive data analysis and data submittal to the NASA archive; 3) Follow up data interpretation working with NASA modelers to place our ambient CH2O measurements into a broader photochemical context; 4) Publication of numerous JGR papers using this data; 5) Extensive follow up laboratory tests on the selectivity and efficiency of our CH20 scrubbing system; and 6) An extensive follow up effort to assess and study the mechanical stability of our entire optical system, particularly the multipass absorption cell, with aircraft changes in cabin pressure.

Moth eye-inspired anti-reflective surfaces for improved IR optical systems & visible LEDs fabricated with colloidal lithography and etching.

PubMed

Chan, Lesley W; Morse, Daniel E; Gordon, Michael J

2018-05-08

Near- and sub-wavelength photonic structures are used by numerous organisms (e.g. insects, cephalopods, fish, birds) to create vivid and often dynamically-tunable colors, as well as create, manipulate, or capture light for vision, communication, crypsis, photosynthesis, and defense. This review introduces the physics of moth eye (ME)-like, biomimetic nanostructures and discusses their application to reduce optical losses and improve efficiency of various optoelectronic devices, including photodetectors, photovoltaics, imagers, and light emitting diodes. Light-matter interactions at structured and heterogeneous surfaces over different length scales are discussed, as are the various methods used to create ME-inspired surfaces. Special interest is placed on a simple, scalable, and tunable method, namely colloidal lithography with plasma dry etching, to fabricate ME-inspired nanostructures in a vast suite of materials. Anti-reflective surfaces and coatings for IR devices and enhancing light extraction from visible light emitting diodes are highlighted.

Safety and efficacy of low fluence, high repetition rate versus high fluence, low repetition rate 810-nm diode laser for axillary hair removal in Chinese women.

PubMed

Li, Wenhai; Liu, Chengyi; Chen, Zhou; Cai, Lin; Zhou, Cheng; Xu, Qianxi; Li, Houmin; Zhang, Jianzhong

2016-11-01

High-fluence diode lasers with contact cooling have emerged as the gold standard to remove unwanted hair. Lowering the energy should result in less pain and could theoretically affect the efficacy of the therapy. To compare the safety and efficacy of a low fluence high repetition rate 810-nm diode laser to those of a high fluence, low repetition rate diode laser for permanent axillary hair removal in Chinese women. Ninety-two Chinese women received four axillae laser hair removal treatments at 4-week intervals using the low fluence, high repetition rate 810-nm diode laser in super hair removal (SHR) mode on one side and the high fluence, low repetition rate diode laser in hair removal (HR) mode on the other side. Hair counts were done at each follow-up visit and 6-month follow-up after the final laser treatment using a "Hi Quality Hair Analysis Program System"; the immediate pain score after each treatment session was recorded by a visual analog scale. The overall median reduction of hair was 90.2% with the 810-nm diode laser in SHR mode and 87% with the same laser in HR mode at 6-month follow-up. The median pain scores in SHR mode and in HR mode were 2.75 and 6.75, respectively. Low fluence, high repetition rate diode laser can efficiently remove unwanted hair but also significantly improve tolerability and reduce adverse events during the course of treatment.

Effects of continuous wave and fractionated diode laser on human fibroblast cancer and dermal normal cells by zinc phthalocyanine in photodynamic therapy: A comparative study.

PubMed

Navaeipour, Farzaneh; Afsharan, Hadi; Tajalli, Habib; Mollabashi, Mahmood; Ranjbari, Farideh; Montaseri, Azadeh; Rashidi, Mohammad-Reza

2016-08-01

In this experimental study, cancer and normal cells behavior during an in vitro photodynamic therapy (PDT) under exposure of continuous wave (CW) and fractionated mode of laser with different irradiation power and time intervals was compared and investigated. At the first, human fibroblast cancer cell line (SW 872) and human dermal normal (HFFF2) cell line were incubated with different concentrations of zinc phthalocyanine (ZnPc), as a PDT drug. The cells, then, were irradiated with a 675nm diode laser and the cell viability was evaluated using MTT assay. Under optimized conditions, the viability of the cancer cells was eventually reduced to 3.23% and 13.17%, and that of normal cells was decreased to 20.83% and 36.23% using CW and fractionated diode lasers, respectively. In general, the ratio of ZnPc LD50 values for the normal cells to the cancer cells with CW laser was much higher than that of the fractionated laser. Subsequently, cancer cells in comparison with normal ones were found to be more sensitive toward the photodynamic damage induced by ZnPc. In addition, treatment with CW laser was found to be more effective against the cancer cells with a lower toxicity to the normal cells compared with the fractionated diode laser. Copyright © 2016 Elsevier B.V. All rights reserved.

Diode laser surgery versus scalpel surgery in the treatment of fibrous hyperplasia: a randomized clinical trial.

PubMed

Amaral, M B F; de Ávila, J M S; Abreu, M H G; Mesquita, R A

2015-11-01

Fibrous hyperplasia is treated by surgical incision using a scalpel, together with removal of the source of chronic trauma. However, scalpel techniques do not provide the haemostasis that is necessary when dealing with highly vascular tissues. Diode laser surgery can be used in the management of oral tissues due to its high absorption by water and haemoglobin, and has provided good results in both periodontal surgery and oral lesions. The aim of the present study was to compare the effects of diode laser surgery to those of the conventional technique in patients with fibrous hyperplasia. A randomized clinical trial was performed in which surgical and postoperative evaluations were analyzed. On comparison of the laser-treated (study group) patients to those treated with a scalpel (control group), significant differences were observed in the duration of surgery and the use of analgesic medications. Over a 3-week period, clinical healing of the postoperative wound was significantly faster in the control group as compared to the study group. In conclusion, diode laser surgery proved to be more effective and less invasive when compared to scalpel surgery in the management of fibrous hyperplasia. However, wound healing proved to be faster when using scalpel surgery. Copyright © 2015 International Association of Oral and Maxillofacial Surgeons. Published by Elsevier Ltd. All rights reserved.

Comparative study of two intraoral laser techniques for soft tissue surgery

NASA Astrophysics Data System (ADS)

Swick, Michael D.; Richter, Alexander

2003-06-01

Historically, 810nm has been the predominant wavelength used for intraoral surgery, when diode lasers have been discussed, due to their large numbers in the market place. The techniques used intraorally with the 810nm diode have been relatively similar in most cases. Low powers, 1 or 2 watts, using continuous wave, are employed. The purpose of this study is to compare the thermal damage of the technique of using continuous wave at low powers, to using higher powers with a pulse mode and water for coolant, with the 980nm diode wavelength. During the study the laser fiber was held immobile eliminating surgical manipulation as an error. The resultant histology proves, while the volume of vaporization dramatically increases, thus giving the clinician the ability to reduce the time for destructive conduction of excess heat for a given procedure, the amount of coagulation actually decreases in width and depth. As an added benefit charring, which has been implicated in delayed healing is virtually eliminated. This evidence, coupled with excellent clinical results, lends validity to the use of pulsed higher powers and water coolant for the 980nm diode laser.

Efficient single-mode operation of a cladding-pumped ytterbium-doped helical-core fiber laser.

PubMed

Wang, P; Cooper, L J; Sahu, J K; Clarkson, W A

2006-01-15

A novel approach to achieving robust single-spatial-mode operation of cladding-pumped fiber lasers with multimode cores is reported. The approach is based on the use of a fiber geometry in which the core has a helical trajectory within the inner cladding to suppress laser oscillation on higher-order modes. In a preliminary proof-of-principle study, efficient single-mode operation of a cladding-pumped ytterbium-doped helical-core fiber laser with a 30 microm diameter core and a numerical aperture of 0.087 has been demonstrated. The laser yielded 60.4 W of output at 1043 nm in a beam with M2 < 1.4 for 92.6 W launched pump power from a diode stack at 976 nm. The slope efficiency at pump powers well above threshold was approximately 84%, which compares favorably with the slope efficiencies achievable with conventional straight-core Yb-doped double-clad fiber lasers.

SU-E-P-34: Dose Perturbation Caused by Sun Nuclear QED Diode When Used for Very Small Electron Fields

DOE Office of Scientific and Technical Information (OSTI.GOV)

Klash, S; Steinman, J; Stanley, T

2015-06-15

Purpose: Diodes are utilized by radiotherapy departments to help verify that treatment fields are being delivered correctly to the patient. Some treatment fields utilize electron beams along with a cerrobend cutout to shape the beam to the area to be treated. Cerrobend cutouts can sometimes be very small < 2×2-cm2. Some published work has addressed diode perturbation for cutout sizes down to 1.5-cm, this work addresses the diode perturbation of the Sun Nuclear QEDTM diode for cutouts as small as 0.5-cm in diameter. Methods: Measurements were taken with an A16 Exradin micro-chamber in Solid Water to 100-cm SSD. Dmax wasmore » determined for each cutout using various amounts of Solid Water in 1–2 mm increments to account for the dmax shifting in small fields. The diode was placed on top of the solid water to 100-cm SSD in the center of the cutout. Measurements were taken with no diode for comparison. The cutouts ranged in diameter from 0.5-cm to 5.0-cm and included the open 6×6 insert. Measurements were made for energies 6, 9, 12, 15,&18 MeV. Results: For 6 MeV, the percent dose reduction from the diode in the cutout field compared to the field without the diode ranged from 35% to 25% as a function of cutout size. For higher energies, this percentage decreased and generally was 25% to 15%. It was observed that dmax shifts significantly upstream for very small cutouts (<2-cm diameter) to less than 1 cm for all energies. Conclusion: The presence of diodes in small electron fields is enough to cause significant dose perturbation to the target volume. It is recommended that diodes for very small electron fields be used sparingly or possibly with a dose correction per treatment fraction(s), if the total projected delivered dose is going to be significantly different from that prescribed by the physician.« less

Performance of the K+ ion diode in the 2 MV injector for heavy ion fusion

NASA Astrophysics Data System (ADS)

Bieniosek, F. M.; Henestroza, E.; Kwan, J. W.

2002-02-01

Heavy ion beam inertial fusion driver concepts depend on the availability and performance of high-brightness high-current ion sources. Surface ionization sources have relatively low current density but high brightness because of the low temperature of the emitted ions. We have measured the beam profiles at the exit of the injector diode, and compared the measured profiles with EGUN and WARP-3D predictions. Spherical aberrations are significant in this large aspect ratio diode. We discuss the measured and calculated beam size and beam profiles, the effect of aberrations, quality of vacuum, and secondary electron distributions on the beam profile.

Antiferromagnetic spin current rectifier

NASA Astrophysics Data System (ADS)

Khymyn, Roman; Tiberkevich, Vasil; Slavin, Andrei

2017-05-01

It is shown theoretically, that an antiferromagnetic dielectric with bi-axial anisotropy, such as NiO, can be used for the rectification of linearly-polarized AC spin current. The AC spin current excites two evanescent modes in the antiferromagnet, which, in turn, create DC spin current flowing back through the antiferromagnetic surface. Spin diode based on this effect can be used in future spintronic devices as direct detector of spin current in the millimeter- and submillimeter-wave bands. The sensitivity of such a spin diode is comparable to the sensitivity of modern electric Schottky diodes and lies in the range 102-103 V/W for 30 ×30 nm2 structure.

Design Considerations for Heavily-Doped Cryogenic Schottky Diode Varactor Multipliers

NASA Technical Reports Server (NTRS)

Schlecht, E.; Maiwald, F.; Chattopadhyay, G.; Martin, S.; Mehdi, I.

2001-01-01

Diode modeling for Schottky varactor frequency multipliers above 500 GHz is presented with special emphasis placed on simple models and fitted equations for rapid circuit design. Temperature- and doping-dependent mobility, resistivity, and avalanche current multiplication and breakdown are presented. Next is a discussion of static junction current, including the effects of tunneling as well as thermionic emission. These results have been compared to detailed measurements made down to 80 K on diodes fabricated at JPL, followed by a discussion of the effect on multiplier efficiency. Finally, a simple model of current saturation in the undepleted active layer suitable for inclusion in harmonic balance simulators is derived.

Clinical application of a new 0.63- to 0.65-μm pulse diode laser in treating ear, throat, and nose diseases in adults and children

NASA Astrophysics Data System (ADS)

Nasedkin, Alexy N.; Pletnev, A. S.

2001-04-01

An investigation was made of applying a pulsed diode laser emitting at the wavelengths of 0.63 to 0.65 micrometers to treat various otolaryngological diseases, such as rhinosinusitis, acute rhinitis, vasomotor rhinitis, allergic rhinitis, the illness of the lymphoid ring, adenoiditis, chronic tonsillitis, pharyngitis, and catarrhal and suppurative otitis. The therapeutic effect produced by the pulsed diode laser was compared with that of conventional therapeutic lasers. It was found that the pulsed low-intensity laser radiation in the red spectrum region offered a number of advantages over conventional laser therapeutic techniques.

Fabrication and characterization of n-ZnO nanonails array/p(+)-GaN heterojunction diode.

PubMed

Zhu, G Y; Chen, G F; Li, J T; Shi, Z L; Lin, Y; Ding, T; Xu, X Y; Dai, J; Xu, C X

2012-10-01

A novel heterojunctional structure of n-ZnO nanonails array/p(+)-GaN light-emitting diode was fabricated by Chemical Vapor Deposition method. A broad electroluminescence spectrum shows two peaks centered at 435 nm and 478 nm at room temperature, respectively. By comparing the photoluminescence and electroluminescence spectra, together with analyzing the energy band structure of heterojunction light emitting diode, it suggested that the electroluminescence peak located at 435 nm originates from Mg acceptor level of p(+)-GaN layer, whereas the electroluminescence peak located at 478 nm originates from the defects of n-ZnO nanonails array.

Laser diode initiated detonators for space applications

NASA Technical Reports Server (NTRS)

Ewick, David W.; Graham, J. A.; Hawley, J. D.

1993-01-01

Ensign Bickford Aerospace Company (EBAC) has over ten years of experience in the design and development of laser ordnance systems. Recent efforts have focused on the development of laser diode ordnance systems for space applications. Because the laser initiated detonators contain only insensitive secondary explosives, a high degree of system safety is achieved. Typical performance characteristics of a laser diode initiated detonator are described in this paper, including all-fire level, function time, and output. A finite difference model used at EBAC to predict detonator performance, is described and calculated results are compared to experimental data. Finally, the use of statistically designed experiments to evaluate performance of laser initiated detonators is discussed.

A Preliminary In Vitro Study on the Efficacy of High-Power Photodynamic Therapy (HLLT): Comparison between Pulsed Diode Lasers and Superpulsed Diode Lasers and Impact of Hydrogen Peroxide with Controlled Stabilization

PubMed Central

Baldoni, Marco; Ghisalberti, Carlo Angelo; Paiusco, Alessio

2016-01-01

Aim. In periodontology lasers have been suggested for the photodynamic therapy (PDT): such therapy can be defined as the inactivation of cells, microorganisms, or molecules induced by light and not by heat. The aim of this study was to evaluate results of PDT using a 980 nm diode laser (Wiser Doctor Smile, Lambda SPA, Italy) combined with hydrogen peroxide, comparing a pulsed diode laser (LI) activity to a high-frequency superpulsed diode laser (LII). Materials and Methods. Primary fibroblasts and keratinocytes cell lines, isolated from human dermis, were irradiated every 48 h for 10 days using LI and LII combined with SiOxyL+ ™ Solution (hydrogen peroxide (HP) stabilized with a glycerol phosphate complex). Two days after the last irradiation, the treated cultures were analyzed by flow cytofluorometry (FACS) and western blotting to quantify keratin 5 and keratin 8 with monoclonal antibodies reactive to cytokeratin 5 and cytokeratin 8. Antimicrobial activity was also evaluated. Results. Both experimental models show the superiority of LII against LI. In parallel, stabilized HP provided better results in the regeneration test in respect to common HP, while the biocidal activity remains comparable. Conclusion. The use of high-frequency lasers combined with stabilized hydrogen peroxide can provide optimal results for a substantial decrease of bacterial count combined with a maximal biostimulation induction of soft tissues and osteogenesis. PMID:27631000

A Preliminary In Vitro Study on the Efficacy of High-Power Photodynamic Therapy (HLLT): Comparison between Pulsed Diode Lasers and Superpulsed Diode Lasers and Impact of Hydrogen Peroxide with Controlled Stabilization.

PubMed

Caccianiga, Gianluigi; Baldoni, Marco; Ghisalberti, Carlo Angelo; Paiusco, Alessio

2016-01-01

Aim. In periodontology lasers have been suggested for the photodynamic therapy (PDT): such therapy can be defined as the inactivation of cells, microorganisms, or molecules induced by light and not by heat. The aim of this study was to evaluate results of PDT using a 980 nm diode laser (Wiser Doctor Smile, Lambda SPA, Italy) combined with hydrogen peroxide, comparing a pulsed diode laser (LI) activity to a high-frequency superpulsed diode laser (LII). Materials and Methods. Primary fibroblasts and keratinocytes cell lines, isolated from human dermis, were irradiated every 48 h for 10 days using LI and LII combined with SiOxyL(+) ™ Solution (hydrogen peroxide (HP) stabilized with a glycerol phosphate complex). Two days after the last irradiation, the treated cultures were analyzed by flow cytofluorometry (FACS) and western blotting to quantify keratin 5 and keratin 8 with monoclonal antibodies reactive to cytokeratin 5 and cytokeratin 8. Antimicrobial activity was also evaluated. Results. Both experimental models show the superiority of LII against LI. In parallel, stabilized HP provided better results in the regeneration test in respect to common HP, while the biocidal activity remains comparable. Conclusion. The use of high-frequency lasers combined with stabilized hydrogen peroxide can provide optimal results for a substantial decrease of bacterial count combined with a maximal biostimulation induction of soft tissues and osteogenesis.

Comparative use of CO₂ laser, diode laser and monopolar electrocautery for resection of the soft palate in dogs with brachycephalic airway obstructive syndrome.

PubMed

Dunié-Mérigot, A; Bouvy, B; Poncet, C

2010-10-30

Clinical results, complications and the outcome of using either a carbon dioxide (CO₂) laser, diode laser or electrocautery (ELEC) for resection of the soft palate with an extended palatoplasty technique in brachycephalic dogs with upper airway obstructive syndrome were compared. Dogs were randomly allocated into three groups (n=20 in each group): ELEC, diode and CO₂ groups. The palatoplasty was made at the rostral aspect of the tonsils. A respiratory clinical score, ranging from 0 (normal) to 4 (cyanosis), was attributed to each dog before surgery and at 0 hours, 24 hours, two weeks and six months after surgery. A favourable outcome was defined as a one point or greater decrease in score 24 hours after surgery. The proportion of dogs with a favourable outcome was significantly higher in the CO₂ (n=15) and ELEC groups (n=15) in comparison with the diode group (n=7) (OR=5.6, 95 per cent confidence interval 1.4 to 21.9). Surgical time was significantly shorter (P<0.001; mean [sd] 510 [178] seconds), and bleeding was less common (P<0.001; 30 per cent of cases) in the CO₂ group. Complications were most frequent with the diode group (two cases of death and two cases of tracheostomy). The final outcome for all groups (n=57) was considered excellent in 79 per cent of cases and was considered good in 21 per cent.

Diester Molecules for Organic-Based Electrical and Photoelectrical Devices

NASA Astrophysics Data System (ADS)

Topal, Giray; Tombak, Ahmet; Yigitalp, Esref; Batibay, Derya; Kilicoglu, Tahsin; Ocak, Yusuf Selim

2017-07-01

Diester derivatives of terephthalic acid molecules were synthesized according to the literature. Au/Diester derivatives/ n-Si organic-inorganic (OI) heterojunction-type devices were fabricated, and the current-voltage ( I- V) characteristics of the devices have been investigated at room temperature. I- V characteristics demonstrated that all diodes had excellent rectification properties. Primary diode parameters such as series resistance and barrier height were extracted by using semi-log I- V plots and Norde methods, and were compared. It was seen that there was a substantial agreement between results obtained from two methods. Calculated barrier height values were about the same with 0.02-eV differences that were attributed to the series resistance. Ideality factors, which show how the diode closes to ideal diodes, were also extracted from semi-log I- V plots. Thus, the modification of the Au/ n-Si diode potential barrier was accomplished using diester derivatives as an interlayer. The I- V measurements were repeated to characterize the devices at 100 mW/cm2 illumination intensity with the help of a solar simulator with an AM1.5G filter.

The determination of modified barrier heights in Ti/GaN nano-Schottky diodes at high temperature.

PubMed

Lee, Seung-Yong; Kim, Tae-Hong; Chol, Nam-Kyu; Seong, Han-Kyu; Choi, Heon-Jin; Ahn, Byung-Guk; Lee, Sang-Kwon

2008-10-01

We have investigated the size-effect of the nano-Schottky diodes on the electrical transport properties and the temperature-dependent current transport mechanism in a metal-semiconductor nanowire junction (a Ti/GaN nano-Schottky diode) using current-voltage characterization in the range of 300-423 K. We found that the modified mean Schottky barrier height (SBH) was approximately 0.7 eV with a standard deviation of approximately 0.14 V using a Gaussian distribution model of the barrier heights. The slightly high value of the modified mean SBH (approximately 0.11 eV) compared to the results from the thin-film based Ti/GaN Schottky diodes could be due to an additional oxide layer at the interface between the Ti and GaN nanowires. Moreover, we found that the abnormal behavior of the barrier heights and the ideality factors in a Ti/GaN nano-Schottky diode at a temperature below 423 K could be explained by a combination of the enhancement of the tunneling current and a model with a Gaussian distribution of the barrier heights.

Temperature dependent electrical characterization of organic Schottky diode based on thick MgPc films

NASA Astrophysics Data System (ADS)

Singh, J.; Sharma, R. K.; Sule, U. S.; Goutam, U. K.; Gupta, Jagannath; Gadkari, S. C.

2017-07-01

Magnesium phthalocyanine (MgPc) based Schottky diode on indium tin oxide (ITO) substrate was fabricated by thermal evaporation method. The dark current voltage characteristics of the prepared ITO-MgPc-Al heterojunction Schottky diode were measured at different temperatures. The diode showed the non-ideal rectification behavior under forward and reverse bias conditions with a rectification ratio (RR) of 56 at  ±1 V at room temperature. Under forward bias, thermionic emission and space charge limited conduction (SCLC) were found to be the dominant conduction mechanisms at low (below 0.6 V) and high voltages (above 0.6 V) respectively. Under reverse bias conditions, Poole-Frenkel (field assisted thermal detrapping of carriers) was the dominant conduction mechanism. Three different approaches namely, I-V plots, Norde and Cheung methods were used to determine the diode parameters including ideality factor (n), barrier height (Φb), series resistance (R s) and were compared. SCLC mechanism showed that the trap concentration is 5.52  ×  1022 m-3 and it lies at 0.46 eV above the valence band edge.

Application of AXUV diode detectors at ASDEX Upgrade

NASA Astrophysics Data System (ADS)

Bernert, M.; Eich, T.; Burckhart, A.; Fuchs, J. C.; Giannone, L.; Kallenbach, A.; McDermott, R. M.; Sieglin, B.

2014-03-01

In the ASDEX Upgrade tokamak, a radiation measurement for a wide spectral range, based on semiconductor detectors, with 256 lines of sight and a time resolution of 5μs was recently installed. In combination with the foil based bolometry, it is now possible to estimate the absolutely calibrated radiated power of the plasma on fast timescales. This work introduces this diagnostic based on AXUV (Absolute eXtended UltraViolet) n-on-p diodes made by International Radiation Detectors, Inc. The measurement and the degradation of the diodes in a tokamak environment is shown. Even though the AXUV diodes are developed to have a constant sensitivity for all photon energies (1 eV-8 keV), degradation leads to a photon energy dependence of the sensitivity. The foil bolometry, which is restricted to a time resolution of less than 1 kHz, offers a basis for a time dependent calibration of the diodes. The measurements of the quasi-calibrated diodes are compared with the foil bolometry and found to be accurate on the kHz time scale. Therefore, it is assumed, that the corrected values are also valid for the highest time resolution (200 kHz). With this improved diagnostic setup, the radiation induced by edge localized modes is analyzed on fast timescales.

Integration of high power laser diodes with microoptical components in a compact pumping source for visible fiber laser

NASA Astrophysics Data System (ADS)

Goering, Rolf; Hoefer, Bernd; Kraeplin, Anke; Schreiber, Peter; Kley, Ernst-Bernhard; Schmeisser, Volkmar

1999-04-01

A novel technique, the so-called skew ray imaging concept, has been developed for beam transformation of high power diode laser bars. It leads to beam circularization with optimum brightness conservation. This concept uses two key microoptical components: a fast axis collimator microlens (FAC) of high isoplanatism and a special array of beam deflecting elements, the number of which corresponds to the single emitter number of the diode laser. Using this concept of skew ray imaging in a modified form, prototypes of pumping sources for visible fiber laser have been developed and built up. Several watts of optical power have been focused into a small spot of 25 micrometers with a numerical aperture of 0.35. GRIN cylindrical microlenses with 0.1 mm focal length and diffractive blazed gratings as redirector have been used. The grating periods of the redirector sections have been between 8 and 100 (mu) M. They have been produced by e-beam direct writing in resist. After optimization of the fabrication process the diffraction efficiencies of al sections have been beyond 86 percent with good reproducibility. Special techniques have been sued for system integration. The FAC microlenses have been attached to a copper lens holder with a subsequent gluing process of the holder to the laser diode heatsink. A UV-curable adhesive with extremely low shrinkage has been selected. The redirector element has been integrated with an additional possibility for lateral adjustment in order to compensate minor residual walk-off effects of the microlens when the laser power is varied from zero to maximum. A very compact pumping source of 3 inches X 1 inch X 1 inch dimensions has been realized with 5 W optical power in the desired spot. First diode pumped fiber laser operation in the visible has been demonstrated with this source.

External cavity diode laser setup with two interference filters

NASA Astrophysics Data System (ADS)

Martin, Alexander; Baus, Patrick; Birkl, Gerhard

2016-12-01

We present an external cavity diode laser setup using two identical, commercially available interference filters operated in the blue wavelength range around 450 nm. The combination of the two filters decreases the transmission width, while increasing the edge steepness without a significant reduction in peak transmittance. Due to the broad spectral transmission of these interference filters compared to the internal mode spacing of blue laser diodes, an additional locking scheme, based on Hänsch-Couillaud locking to a cavity, has been added to improve the stability. The laser is stabilized to a line in the tellurium spectrum via saturation spectroscopy, and single-frequency operation for a duration of two days is demonstrated by monitoring the error signal of the lock and the piezo drive compensating the length change of the external resonator due to air pressure variations. Additionally, transmission curves of the filters and the spectra of a sample of diodes are given.

Correlation between microstructure and thermionic electron emission from Os-Ru thin films on dispenser cathodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Swartzentruber, Phillip D.; John Balk, Thomas, E-mail: john.balk@uky.edu; Effgen, Michael P.

2014-07-01

Osmium-ruthenium films with different microstructures were deposited onto dispenser cathodes and subjected to 1000 h of close-spaced diode testing. Tailored microstructures were achieved by applying substrate biasing during deposition, and these were evaluated with scanning electron microscopy, x-ray diffraction, and energy dispersive x-ray spectroscopy before and after close-spaced diode testing. Knee temperatures determined from the close-spaced diode test data were used to evaluate cathode performance. Cathodes with a large (10-11) Os-Ru film texture possessed comparatively low knee temperatures. Furthermore, a low knee temperature correlated with a low effective work function as calculated from the close-spaced diode data. It is proposedmore » that the formation of strong (10-11) texture is responsible for the superior performance of the cathode with a multilayered Os-Ru coating.« less

Polarization-enhanced InGaN/GaN-based hybrid tunnel junction contacts to GaN p-n diodes and InGaN LEDs

NASA Astrophysics Data System (ADS)

Mughal, Asad J.; Young, Erin C.; Alhassan, Abdullah I.; Back, Joonho; Nakamura, Shuji; Speck, James S.; DenBaars, Steven P.

2017-12-01

Improved turn-on voltages and reduced series resistances were realized by depositing highly Si-doped n-type GaN using molecular beam epitaxy on polarization-enhanced p-type InGaN contact layers grown using metal-organic chemical vapor deposition. We compared the effects of different Si doping concentrations and the addition of p-type InGaN on the forward voltages of p-n diodes and light-emitting diodes, and found that increasing the Si concentrations from 1.9 × 1020 to 4.6 × 1020 cm-3 and including a highly doped p-type InGaN at the junction both contributed to reductions in the depletion width, the series resistance of 4.2 × 10-3-3.4 × 10-3 Ω·cm2, and the turn-on voltages of the diodes.

Modeling and Simulation of Capacitance-Voltage Characteristics of a Nitride GaAs Schottky Diode

NASA Astrophysics Data System (ADS)

Ziane, Abderrezzaq; Amrani, Mohammed; Benamara, Zineb; Rabehi, Abdelaziz

2018-06-01

A nitride GaAs Schottky diode has been fabricated by the nitridation of GaAs substrates using a radio frequency discharge nitrogen plasma source with a layer thickness of approximately 0.7 nm of GaN. The capacitance-voltage (C-V) characteristics of the Au/GaN/GaAs structure were investigated at room temperature for different frequencies, ranging from 1 kHz to 1 MHz. The C-V measurements for the Au/GaN/GaAs Schottky diode were found to be strongly dependent on the bias voltage and the frequency. The capacitance curves depict an anomalous peak and a negative capacitance phenomenon, indicating the presence of continuous interface state density behavior. A numerical drift-diffusion model based on the Scharfetter-Gummel algorithm was elaborated to solve a system composed of the Poisson and continuities equations. In this model, we take into account the continuous interface state density, and we have considered exponential and Gaussian distributions of trap states in the band gap. The effects of the GaAs doping concentration and the trap state density are discussed. We deduce the shape and values of the trap states, then we validate the developed model by fitting the computed C-V curves with experimental measurements at low frequency.

Improving the Stability of Metal Halide Perovskite Materials and Light-Emitting Diodes.

PubMed

Cho, Himchan; Kim, Young-Hoon; Wolf, Christoph; Lee, Hyeon-Dong; Lee, Tae-Woo

2018-01-25

Metal halide perovskites (MHPs) have numerous advantages as light emitters such as high photoluminescence quantum efficiency with a direct bandgap, very narrow emission linewidth, high charge-carrier mobility, low energetic disorder, solution processability, simple color tuning, and low material cost. Based on these advantages, MHPs have recently shown unprecedented radical progress (maximum current efficiency from 0.3 to 42.9 cd A -1 ) in the field of light-emitting diodes. However, perovskite light-emitting diodes (PeLEDs) suffer from intrinsic instability of MHP materials and instability arising from the operation of the PeLEDs. Recently, many researchers have devoted efforts to overcome these instabilities. Here, the origins of the instability in PeLEDs are reviewed by categorizing it into two types: instability of (i) the MHP materials and (ii) the constituent layers and interfaces in PeLED devices. Then, the strategies to improve the stability of MHP materials and PeLEDs are critically reviewed, such as A-site cation engineering, Ruddlesden-Popper phase, suppression of ion migration with additives and blocking layers, fabrication of uniform bulk polycrystalline MHP layers, and fabrication of stable MHP nanoparticles. Based on this review of recent advances, future research directions and an outlook of PeLEDs for display applications are suggested. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Modeling and performance analysis of an all-optical photonic microwave filter in the frequency range of 0.01-15 GHz

NASA Astrophysics Data System (ADS)

Aguayo-Rodríguez, Gustavo; Zaldívar-Huerta, Ignacio E.; Rodríguez-Asomoza, Jorge; García-Juárez, Alejandro; Alonso-Rubio, Paul

2010-01-01

The generation, distribution and processing of microwave signals in the optical domain is a topic of research due to many advantages such as low loss, light weight, broadband width, and immunity to electromagnetic interference. In this sense, a novel all-optical microwave photonic filter scheme is proposed and experimentally demonstrated in the frequency range of 0.01-15.0 GHz. A microwave signal generated by optical mixing drives the microwave photonic filter. Basically, photonic filter is composed by a multimode laser diode, an integrated Mach- Zehnder intensity modulator, and 28.3-Km of single-mode standard fiber. Frequency response of the microwave photonic filter depends of the emission spectral characteristics of the multimode laser diode, the physical length of the single-mode standard fiber, and the chromatic dispersion factor associated to this type of fiber. Frequency response of the photonic filter is composed of a low-pass band centered at zero frequency, and several band-pass lobes located periodically on the microwave frequency range. Experimental results are compared by means of numerical simulations in Matlab exhibiting a small deviation in the frequency range of 0.01-5.0 GHz. However, this deviation is more evident when higher frequencies are reached. In this paper, we evaluate the causes of this deviation in the range of 5.0-15.0 GHz analyzing the parameters involved in the frequency response. This analysis permits to improve the performance of the photonic microwave filter to higher frequencies.

Using memory-efficient algorithm for large-scale time-domain modeling of surface plasmon polaritons propagation in organic light emitting diodes

NASA Astrophysics Data System (ADS)

Zakirov, Andrey; Belousov, Sergei; Valuev, Ilya; Levchenko, Vadim; Perepelkina, Anastasia; Zempo, Yasunari

2017-10-01

We demonstrate an efficient approach to numerical modeling of optical properties of large-scale structures with typical dimensions much greater than the wavelength of light. For this purpose, we use the finite-difference time-domain (FDTD) method enhanced with a memory efficient Locally Recursive non-Locally Asynchronous (LRnLA) algorithm called DiamondTorre and implemented for General Purpose Graphical Processing Units (GPGPU) architecture. We apply our approach to simulation of optical properties of organic light emitting diodes (OLEDs), which is an essential step in the process of designing OLEDs with improved efficiency. Specifically, we consider a problem of excitation and propagation of surface plasmon polaritons (SPPs) in a typical OLED, which is a challenging task given that SPP decay length can be about two orders of magnitude greater than the wavelength of excitation. We show that with our approach it is possible to extend the simulated volume size sufficiently so that SPP decay dynamics is accounted for. We further consider an OLED with periodically corrugated metallic cathode and show how the SPP decay length can be greatly reduced due to scattering off the corrugation. Ultimately, we compare the performance of our algorithm to the conventional FDTD and demonstrate that our approach can efficiently be used for large-scale FDTD simulations with the use of only a single GPGPU-powered workstation, which is not practically feasible with the conventional FDTD.

Effect of radiant heat on conventional glass ionomer cements during setting by using a blue light diode laser system (445 nm).

PubMed

Dionysopoulos, Dimitrios; Tolidis, Kosmas; Strakas, Dimitrios; Gerasimou, Paris; Sfeikos, Thrasyvoulos; Gutknecht, Norbert

2017-04-01

The aim of this in vitro study was to evaluate the effect of radiant heat on surface hardness of three conventional glass ionomer cements (GICs) by using a blue diode laser system (445 nm) and a light-emitting diode (LED) unit. Additionally, the safety of the laser treatment was evaluated. Thirty disk-shaped specimens were prepared of each tested GIC (Equia Fil, Ketac Universal Aplicap and Riva Self Cure). The experimental groups (n = 10) of the study were as follows: group 1 was the control group of the study; in group 2, the specimens were irradiated for 60 s at the top surface using a LED light-curing unit; and in group 3, the specimens were irradiated for 60 s at the top surface using a blue light diode laser system (445 nm). Statistical analysis was performed using one-way ANOVA and Tukey post-hoc tests at a level of significance of a = 0.05. Radiant heat treatments, with both laser and LED devices, increased surface hardness (p < 0.05) but in different extent. Blue diode laser treatment was seemed to be more effective compared to LED treatment. There were no alterations in surface morphology or chemical composition after laser treatment. The tested radiant heat treatment with a blue diode laser may be advantageous for the longevity of GIC restorations. The safety of the use of blue diode laser for this application was confirmed.

An intraocular micro light-emitting diode device for endo-illumination during pars plana vitrectomy.

PubMed

Koelbl, Philipp S; Lingenfelder, Christian; Spraul, Christoph W; Kampmeier, Juergen; Koch, Frank Hj; Kim, Yong Keun; Hessling, Martin

2018-03-01

Development of a new, fiber-free, single-use endo-illuminator for pars plana vitrectomy as a replacement for fiber-based systems with external light sources. The hand-guided intraocularly placed white micro light-emitting diode is evaluated for its illumination properties and potential photochemical and thermal hazards. A micro light-emitting diode was used to develop a single-use intraocular illumination system. The light-source-on-tip device was implemented in a prototype with 23G trocar compatible outer diameter of 0.6 mm. The experimental testing was performed on porcine eyes. All calculations of possible photochemical and thermal hazards during the application of the intraocular micro light-emitting diode were calculated according to DIN EN ISO 15007-2: 2014. The endo-illuminator generated a homogeneous and bright illumination of the intraocular space. The color impression was physiologic and natural. Contrary to initial apprehension, the possible risk caused by inserting a light-emitting diode into the intraocular vitreous was much smaller when compared to conventional fiber-based illumination systems. The photochemical and thermal hazards allowed a continuous exposure time to the retina of at least 4.7 h. This first intraocular light source showed that a light-emitting diode can be introduced into the eye. The system can be built as single-use illumination system. This light-source-on-tip light-emitting diode-endo-illumination combines a chandelier wide-angle illumination with an adjustable endo-illuminator.

Comparative evaluation of antimicrobial effects of Er:YAG, diode, and CO₂ lasers on titanium discs: an experimental study.

PubMed

Tosun, Emre; Tasar, Ferda; Strauss, Robert; Kıvanc, Dolunay Gulmez; Ungor, Cem

2012-05-01

This study examined carbon dioxide (CO(2); 10,600 nm), diode (808 nm), and erbium (Er):yttrium-aluminum-garnet (YAG; 2,940 nm) laser applications on Staphylococcus aureus contaminated, sandblasted, large-grit, acid-etched surface titanium discs and performed a comparative evaluation of the obtained bactericidal effects and the applicability of these effects in clinical practice. This study was carried out in 5 main groups: Er:YAG laser in very short pulse (VSP) emission mode, Er:YAG laser in short pulse (SP) emission mode, diode laser with a 320-nm fiber optic diode laser with an R24-B handpiece, and CO(2) laser. After laser irradiation, dilutions were spread on sheep blood agar plates and, after an incubation period of 24 hours, colony-forming units were counted and compared with the control group, and the bactericidal activity was assessed in relation to the colony counts. The CO(2) laser eliminated 100% of the bacteria at 6 W, 20 Hz, and a 10-ms exposure time/pulse with a 10-second application period (0.8-mm spot size). The continuous-wave diode laser eliminated 97% of the bacteria at 1 W using a 10-second application with a 320-μm optic fiber, 100% of the bacteria were killed with a 1-W, 10-second continuous-wave application with an R14-B handpiece. The Er:YAG laser eliminated 100% of the bacteria at 90 mJ and 10 Hz using a 10-second application in a superpulse mode (300-ms exposure time/pulse). The Er:YAG laser also eliminated 99% to 100% of the bacteria in VSP mode at 90 mJ and 10 Hz with a 10-second application. The results of this study show that a complete, or near complete, elimination of surface bacteria on titanium surfaces can be accomplished in vitro using a CO(2), diode, or Er:YAG laser as long as appropriate parameters are used. Copyright © 2012 American Association of Oral and Maxillofacial Surgeons. All rights reserved.

Diode laser-assisted endoscopic dacryocystorhinostomy: a comparison of three different combinations of adjunctive procedures.

PubMed

Dogan, Remzi; Meric, Aysenur; Ozsütcü, Mustafa; Yenigun, Alper

2013-08-01

Chronic dacryocystitis is a frequently encountered condition which can be corrected by dacryocystorhinostomy. Today, the diode laser is increasingly put to use in such corrective operations. This study aims to answer the questions of which adjunctive procedures and which combinations of such procedures are necessary and effective in securing more successful outcomes in diode laser dacryocystorhinostomy. This prospective randomized study included eighty patients (13 male, 67 female) who underwent dacryocystorhinostomy in our hospital during the 2 year period of January 2009-January 2011. The patients were selected consecutively and were randomly allocated to three groups. Group 1 (30): diode laser + mitomycin C + silicone intubation; Group 2 (27): diode laser + silicone intubation; Group 3 (23): diode laser + mitomycin C. All patients were evaluated postoperatively on day 1, week 1, and on the 1st, 3rd, 6th, 12th, 18th, and 24th months. The postoperative evaluation consisted of preoperative and postoperative ostium measurements, recording postoperative complications, and calculating and comparing success rates and operative times. The mean ages of the patients were 63.4 for Group 1, 60.7 for Group 2, and 61.8 for Group 3. No statistically significant difference was found among the groups regarding pre- and postoperative ostium measurements. The success rates were 84.3, 80, and 76.9 % for Groups 1, 2, and 3, respectively. Complications noted in Group 1 were restenosis (3), premature silicone tube loss (1), development of granulation tissue (3), synechia (2), infection (2), and hemorrhage (3). Those for Group 2 were restenosis (5), premature tube loss (2), granulation (8), synechia (6), infection (3), and hemorrhage (4). Group 3 had 6 cases with stenosis, 5 with granulation, 3 with infection, 6 with synechia, and 5 with hemorrhage. The operative times of the groups were 25.5, 15.3, and 18.1 min, respectively, for Group 1, 2, and 3. All three groups had statistically significant differences regarding the duration of surgery, with p < 0.001, p < 0.001, and p = 0.002 for Group 1 and 2, Group 1 and 3, and Group 2 and 3, respectively. Our study showed that when diode laser DCR was combined with bicanalicular silicone intubation and intraoperative mitomycin C application, those adjunctive procedures, while increasing operative time, enhanced the success rate and diminished complications as compared to diode laser plus intubation and/or diode laser plus mitomycin C.

Ablation of dentin by irradiation of violet diode laser

NASA Astrophysics Data System (ADS)

Hatayama, H.; Kato, J.; Akashi, G.; Hirai, Y.; Inoue, A.

2006-02-01

Several lasers have been used for clinical treatment in dentistry. Among them, diode lasers are attractive because of their compactness compared with other laser sources. Near-infrared diode lasers have been practically used for cutting soft tissues. Because they penetrate deep to soft tissues, they cause sufficiently thick coagulation layer. However, they aren't suitable for removal of carious dentin because absorption by components in dentin is low. Recently, a violet diode laser with a wavelength of 405nm has been developed. It will be effective for cavity preparation because dentin contains about 20% of collagen whose absorption coefficient at a violet wavelength is larger than that at a near-infrared wavelength. In this paper, we examined cutting performance of the violet diode laser for dentin. To our knowledge, there have been no previous reports on application of a violet laser to dentin ablation. Bovine teeth were irradiated by continuous wave violet diode laser with output powers in a range from 0.4W to 2.4W. The beam diameter on the sample was about 270μm and an irradiation time was one second. We obtained the crater ablated at more than an output power of 0.8W. The depth of crater ranged from 20μm at 0.8W to 90μm at 2.4W. Furthermore, the beam spot with an output power of 1.7W was scanned at a speed of 1mm/second corresponding to movement of a dentist's hand in clinical treatment. Grooves with the depth of more than 50μm were also obtained. From these findings, the violet diode laser has good potential for cavity preparation. Therefore, the violet diode laser may become an effective tool for cavity preparation.

To compare the gingival melanin repigmentation after diode laser application and surgical removal.

PubMed

Mahajan, Gaurav; Kaur, Harjit; Jain, Sanjeev; Kaur, Navnit; Sehgal, Navneet Kaur; Gautam, Aditi

2017-01-01

The aim of the present study is to compare the gingival melanin repigmentation after diode laser application and surgical removal done by scraping with Kirkland knife. This study was a randomized split-mouth study where 10 patients presenting with unattractive, diffuse, dark brown to black gingival discoloration on the facial aspect of the maxillary gingiva were treated by diode laser application and surgical removal and followed up for 3-, 6-, and 9-month intervals. The results showed a statistically significant difference in repigmentation between the groups at the interval of 3 months ( P = 0.040), but the difference was statistically not significant at 6 months ( P = 0.118) and 9 months ( P = 0.146). On surgically treated sites, all cases showed repigmentation of the gingiva, but in laser treated, there were two individuals which did not show repigmentation of the gingiva even at the end of 9-month observation time. The incidence of repigmentation was slightly less in laser-treated sites as compared to surgical depigmentation although the difference was statistically significant only up to 3 months.

SU-E-T-260: Pediatric Total Body Irradiation Calculations and In-Vivo Dosimetry Using Diodes and OSLD's

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chungbin, S; Fatyga, M

Purpose: To verify that a photon total body irradiation (TBI) calculation method scales properly from adult to pediatric dimensions and to determine TBI in-vivo dosimetry correction factors for diodes and optically stimulated luminescent dosimeters (OSLD's). Methods: TBI technique used is 400 SAD 18 MV opposed laterals with beam spoiler. Water bags are used to supplement narrower lateral dimensions for patient treatments. To verify that dose calculations scale properly with decreasing dimensions, CAX doses were measured and compared to calculations for different rectangular phantom geometries: (L=length(cm), H=height(cm), d=depth(cm)): L(30)xH(30) (d=3-25), L(30)xH(12)(d=2–20), L(13)xH(13) (d=5–13), L(30)x(H=10–40) d=15, L(30–150) x H(10) (d=15). In infantmore » geometry, measured off axis “leg” dose (L(30)xH(2.5–10.6), d=7)) was compared to CAX (“body” L(30)xH(10)(d=7) adjacent to “leg”). Entrance and exit doses were measured with surface diodes, diodes with buildup, OSLD's, as well as ion chambers for comparison. Correction factors ((ion chamber CAX dose)/(in vivo dose)) were calculated for surface diodes, diodes with buildup, OSLD's, and ion chamber. Results: All rectangular phantom measurements agree with calculated within 2.5%. For L(30)xH(30), L(30)xH(12), L(13)xH(13), L(30)x(H=10–40) and L(30–80)xH(10) agreement was within 1%. For the infant geometry, the ratio of leg dose to CAX varies from 0.956 (h=2.5) to 0.995 (h=10.6). The range of in-vivo dosimetry entrance+exit to CAX dose correction factors varied by dosimeter (diode: 0.883–1.015, surface diode: 1.008–1.214, ion chamber: 0.924–1.084, OSLD: 0.920–1.106). Conclusion: TBI calculations scaled properly to pediatric dimensions. In-vivo dosimetry with various detectors demonstrated similar trends with different magnitudes. OSLD measurements agreed well with ion chamber measurements.« less

Design of compact freeform lens for application specific Light-Emitting Diode packaging.

PubMed

Wang, Kai; Chen, Fei; Liu, Zongyuan; Luo, Xiaobing; Liu, Sheng

2010-01-18

Application specific LED packaging (ASLP) is an emerging technology for high performance LED lighting. We introduced a practical design method of compact freeform lens for extended sources used in ASLP. A new ASLP for road lighting was successfully obtained by integrating a polycarbonate compact freeform lens of small form factor with traditional LED packaging. Optical performance of the ASLP was investigated by both numerical simulation based on Monte Carlo ray tracing method and experiments. Results demonstrated that, comparing with traditional LED module integrated with secondary optics, the ASLP had advantages of much smaller size in volume (approximately 1/8), higher system lumen efficiency (approximately 8.1%), lower cost and more convenience for customers to design and assembly, enabling possible much wider applications of LED for general road lighting. Tolerance analyses were also conducted. Installation errors of horizontal and vertical deviations had more effects on the shape and uniformity of radiation pattern compared with rotational deviation. The tolerances of horizontal, vertical and rotational deviations of this lens were 0.11 mm, 0.14 mm and 2.4 degrees respectively, which were acceptable in engineering.

Near-infrared diode laser based spectroscopic detection of ammonia: a comparative study of photoacoustic and direct optical absorption methods

NASA Technical Reports Server (NTRS)

Bozoki, Zoltan; Mohacsi, Arpad; Szabo, Gabor; Bor, Zsolt; Erdelyi, Miklos; Chen, Weidong; Tittel, Frank K.

2002-01-01

A photoacoustic spectroscopic (PAS) and a direct optical absorption spectroscopic (OAS) gas sensor, both using continuous-wave room-temperature diode lasers operating at 1531.8 nm, were compared on the basis of ammonia detection. Excellent linear correlation between the detector signals of the two systems was found. Although the physical properties and the mode of operation of both sensors were significantly different, their performances were found to be remarkably similar, with a sub-ppm level minimum detectable concentration of ammonia and a fast response time in the range of a few minutes.

Nonlinearity-dependent asymmetric transmission in a sawtooth photonic lattice with defects

NASA Astrophysics Data System (ADS)

Ji, Kaiwen; Qi, Xinyuan; Li, Shasha; Han, Kun; Wen, Zengrun; Zhang, Guoquan; Bai, Jintao

2018-04-01

We study both theoretically and numerically the asymetric transmission of a Gaussian beam in a two-dimensional nonlinear sawtooth lattice with two defects. The results show that quasi-total reflection, asymmetric propagation and asymmetric reflection can all be achieved in such a system by adjusting the input intensity, the magnitude of defects and the number of nonlinear waveguides. This study may provide a new way to realize an optical switch and optical diode.

Efficacy of Conventional Laser Irradiation Versus a New Method for Gingival Depigmentation (Sieve Method): A Clinical Trial.

PubMed

Houshmand, Behzad; Janbakhsh, Noushin; Khalilian, Fatemeh; Talebi Ardakani, Mohammad Reza

2017-01-01

Introduction: Diode laser irradiation has recently shown promising results for treatment of gingival pigmentation. This study sought to compare the efficacy of 2 diode laser irradiation protocols for treatment of gingival pigmentations, namely the conventional method and the sieve method. Methods: In this split-mouth clinical trial, 15 patients with gingival pigmentation were selected and their pigmentation intensity was determined using Dummett's oral pigmentation index (DOPI) in different dental regions. Diode laser (980 nm wavelength and 2 W power) was irradiated through a stipple pattern (sieve method) and conventionally in the other side of the mouth. Level of pain and satisfaction with the outcome (both patient and periodontist) were measured using a 0-10 visual analog scale (VAS) for both methods. Patients were followed up at 2 weeks, one month and 3 months. Pigmentation levels were compared using repeated measures of analysis of variance (ANOVA). The difference in level of pain and satisfaction between the 2 groups was analyzed by sample t test and general estimate equation model. Results: No significant differences were found regarding the reduction of pigmentation scores and pain and scores between the 2 groups. The difference in satisfaction with the results at the three time points was significant in both conventional and sieve methods in patients ( P = 0.001) and periodontists ( P = 0.015). Conclusion: Diode laser irradiation in both methods successfully eliminated gingival pigmentations. The sieve method was comparable to conventional technique, offering no additional advantage.

Diode Laser Clinical Efficacy and Mini-Invasivity in Surgical Exposure of Impacted Teeth.

PubMed

Migliario, Mario; Rizzi, Manuela; Lucchina, Alberta Greco; Renò, Filippo

2016-11-01

The gold standard to arrange impacted teeth in the dental arch is represented by a surgical approach followed by orthodontic traction force application. In the literature, many surgical approaches are proposed to reach such a scope. The aim of the present study is to demonstrate how laser technique could positively assist surgical approaches.Study population was composed by 16 patients undergoing orthodontic treatment of 20 impacted teeth. In 10 patients (population A) surgical exposure of the impacted teeth was performed using a 980 nm diode laser, while in the other 10 patients (population B), surgical incision was performed using a traditional lancet.Only 3 patients of the population A needed local anesthesia for surgical procedure while the remaining 7 patients reported only faint pain during surgery. Two patients referred postsurgical pain (numerical rating scale average value = 2) and needed to take analgesics. None of the patients showed other postsurgical side effects (bleeding, edema).All population B patients needed infiltrative anesthesia and referred postsurgical pain (numerical rating scale average value >4) treated with analgesics. Moreover, in such population, 4 patients referred lips edema while 4 showed bleeding and 6 needed surgical sutures of soft tissues.The lack of side effects of laser surgical approach to expose impacted teeth must persuade dental practitioners to choose such a clinical approach to closed surgical approach every time it is possible.

Comparative study on cw mode versus pulsed mode in AlGaAs-diode lasers

NASA Astrophysics Data System (ADS)

Neckel, Claus P.

2001-04-01

In the last six years AlGaAs-Diodelasers have become more and more popular. Due to their small size, their good electro-optical coupling and delicate glass fibers this type of laser fits into most dental offices. The first diode lasers and still most of the devices still on the market work in a continuos wave mode or in a gated mode up to 50 Hz. Using this setting high temperatures in the tissue are inevitable. In this randomized study we tried to evaluate the difference in clinical cutting efficiency, post operative outcome and the histological findings of the excisional biopsies using a new diode laser Ora-laser Jet 20.

Oxygen measurement by multimode diode lasers employing gas correlation spectroscopy.

PubMed

Lou, Xiutao; Somesfalean, Gabriel; Chen, Bin; Zhang, Zhiguo

2009-02-10

Multimode diode laser (MDL)-based correlation spectroscopy (COSPEC) was used to measure oxygen in ambient air, thereby employing a diode laser (DL) having an emission spectrum that overlaps the oxygen absorption lines of the A band. A sensitivity of 700 ppm m was achieved with good accuracy (2%) and linearity (R(2)=0.999). For comparison, measurements of ambient oxygen were also performed by tunable DL absorption spectroscopy (TDLAS) technique employing a vertical cavity surface emitting laser. We demonstrate that, despite slightly degraded sensitivity, the MDL-based COSPEC-based oxygen sensor has the advantages of high stability, low cost, ease-of-use, and relaxed requirements in component selection and instrument buildup compared with the TDLAS-based instrument.

Experimental diode laser-assisted microvascular anastomosis.

PubMed

Reali, U M; Gelli, R; Giannotti, V; Gori, F; Pratesi, R; Pini, R

1993-05-01

An experimental study to evaluate a diode-laser approach to microvascular end-to-end anastomoses is reported. Studies were carried out on the femoral arteries and veins of Wistar rats, and effective welding of vessel tissue was obtained at low laser power, by enhancing laser absorption with indocyanine green (Cardio-green) solution. The histologic and surgical effects of this laser technique were examined and compared with those of conventional microvascular sutured anastomoses.

Light-emitting diode-based multiwavelength diffuse optical tomography system guided by ultrasound

PubMed Central

Yuan, Guangqian; Alqasemi, Umar; Chen, Aaron; Yang, Yi; Zhu, Quing

2014-01-01

Abstract. Laser diodes are widely used in diffuse optical tomography (DOT) systems but are typically expensive and fragile, while light-emitting diodes (LEDs) are cheaper and are also available in the near-infrared (NIR) range with adequate output power for imaging deeply seated targets. In this study, we introduce a new low-cost DOT system using LEDs of four wavelengths in the NIR spectrum as light sources. The LEDs were modulated at 20 kHz to avoid ambient light. The LEDs were distributed on a hand-held probe and a printed circuit board was mounted at the back of the probe to separately provide switching and driving current to each LED. Ten optical fibers were used to couple the reflected light to 10 parallel photomultiplier tube detectors. A commercial ultrasound system provided simultaneous images of target location and size to guide the image reconstruction. A frequency-domain (FD) laser-diode-based system with ultrasound guidance was also used to compare the results obtained from those of the LED-based system. Results of absorbers embedded in intralipid and inhomogeneous tissue phantoms have demonstrated that the LED-based system provides a comparable quantification accuracy of targets to the FD system and has the potential to image deep targets such as breast lesions. PMID:25473884

Ambient diode laser desorption dielectric barrier discharge ionization mass spectrometry of nonvolatile chemicals.

PubMed

Gilbert-López, Bienvenida; Schilling, Michael; Ahlmann, Norman; Michels, Antje; Hayen, Heiko; Molina-Díaz, Antonio; García-Reyes, Juan F; Franzke, Joachim

2013-03-19

In this work, the combined use of desorption by a continuous wave near-infrared diode laser and ionization by a dielectric barrier discharge-based probe (laser desorption dielectric barrier discharge ionization mass spectrometry (LD-DBDI-MS)) is presented as an ambient ionization method for the mass spectrometric detection of nonvolatile chemicals on surfaces. A separation of desorption and ionization processes could be verified. The use of the diode laser is motivated by its low cost, ease of use, and small size. To achieve an efficient desorption, the glass substrates are coated at the back side with a black point (target point, where the sample is deposited) in order to absorb the energy offered by the diode laser radiation. Subsequent ionization is accomplished by a helium plasmajet generated in the dielectric barrier discharge source. Examples on the application of this approach are shown in both positive and negative ionization modes. A wide variety of multiclass species with low vapor pressure were tested including pesticides, pharmaceuticals and explosives (reserpine, roxithromycin, propazine, prochloraz, spinosad, ampicillin, dicloxacillin, enrofloxacin, tetracycline, oxytetracycline, erythromycin, spinosad, cyclo-1,3,5,7-tetramethylene tetranitrate (HMX), and cyclo-1,3,5-trimethylene trinitramine (RDX)). A comparative evaluation revealed that the use of the laser is advantageous, compared to just heating the substrate surface.

Outpatient hysteroscopic polypectomy: bipolar energy system (Versapoint®) versus diode laser - randomized clinical trial.

PubMed

Lara-Domínguez, Maria D; Arjona-Berral, Jose E; Dios-Palomares, Rafaela; Castelo-Branco, Camil

2016-01-01

To compare the resection of endometrial polyps with two different devices: the Versapoint biopolar electrode and the Diode Laser. One hundred and two patients diagnosed with endometrial polyps were randomly assigned to undergo hysteroscopic polypectomy: one group (n = 52) performed with Versapoint bipolar electrode through a 5Fr working channel and the other group with Biolitec Diode Laser (n = 50) using a specific fiber for polyps in a 7Fr working channel. All cases were managed on an outpatient basis, without anesthesia and using a rigid 30(o) hysteroscope and saline solution as a distention medium. Complete resection rate, operative time, complications, intraoperative pain and relapse rate after three months. Intraoperative pain and polyp resection time was similar in both groups. Upon second look hysteroscopy at 3-month, a higher percentage of women of the Versapoint group presented polyp relapse (32.6 versus 2.2%, p = 0.001). Elimination of the polyp after incomplete resection was higher in the Laser group. A significantly higher number of patients in the Laser group considered the procedure to be highly recommendable (p = 0.02). Polypectomy with Diode Laser resulted in fewer relapses and a higher procedure satisfaction rate as compared to Versapoint.

High-Fluence Light-Emitting Diode-Generated Red Light Modulates the Transforming Growth Factor-Beta Pathway in Human Skin Fibroblasts.

PubMed

Mamalis, Andrew; Jagdeo, Jared

2018-05-24

Skin fibrosis is a significant medical problem with limited available treatment modalities. The key cellular characteristics include increased fibroblast proliferation, collagen production, and transforming growth factor-beta (TGF-B)/SMAD pathway signaling. The authors have previously shown that high-fluence light-emitting diode red light (HF-LED-RL) decreases cellular proliferation and collagen production. Herein, the authors investigate the ability of HF-LED-RL to modulate the TGF-B/SMAD pathway. Normal human dermal fibroblasts were cultured and irradiated with a commercially available hand-held LED array. After irradiation, cell lysates were collected and levels of pSMAD2, TGF-Beta 1, and TGF-Beta I receptor were measured using Western blot. High-fluence light-emitting diode red light decreased TGF-Beta 1 ligand (TGF-B1) levels after irradiation. 320 J/cm HF-LED-RL resulted in 59% TGF-B1 and 640 J/cm HF-LED-RL resulted in 54% TGF-B1, relative to controls. 640 J/cm HF-LED-RL resulted in 62% pSMAD2 0 hours after irradiation, 65% pSMAD2 2 hours after irradiation, and 95% 4 hours after irradiation, compared with matched controls. High-fluence light-emitting diode red light resulted in no significant difference in transforming growth factor-beta receptor I levels compared with matched controls. Skin fibrosis is a significant medical problem with limited available treatment modalities. Light-emitting diode-generated red light is a safe, economic, and noninvasive modality that has a body of in vitro evidence supporting the reduction of key cellular characteristics associated with skin fibrosis.

Clinical Evaluation of Hair Removal Using an 810 nm Diode Laser With a Novel Scanning Device.

PubMed

Courtney, Erin; Goldberg, David J

2016-11-01

Diode lasers are often considered as the gold standard preference for hair removal due to the deep penetration and ef- fective targeting of the hair follicle. A wide variety of diode lasers are available, which can differ in terms of their parameters (such as fluence, pulse duration, repetition rate, scanner, and cooling). The objective of the study was to evaluate the safety and ef cacy of hair removal with an 810 nm novel scanning diode laser, up to six months after last treatment. A scanning 810 nm diode laser was used for axillary hair removal of 14 female patients who received 3 treatments, 4-6 weeks apart. Follow-up on hair count was conducted 3 and 6 months after last treatment and compared to baseline hair count. No unexpected or signi cant adverse events were recorded. An average hair count reduction of 72.8% after 3 months and 67.6% 6 months after the last treatment is demonstrated. The examined 810 nm diode laser was proven to be safe and effective for hair removal. Results were sustained for 6 months after last treatment. Longer follow-up data are followed for further substantiation of the clinical effect. Scanning technology can provide for potentially faster and safer treatments. J Drugs Dermatol. 2016;15(11):1330-1333..

Generation of 3.5 W of diffraction-limited green light from SHG of a single tapered diode laser in a cascade of nonlinear crystals

NASA Astrophysics Data System (ADS)

Hansen, Anders K.; Jensen, Ole B.; Sumpf, Bernd; Erbert, Götz; Unterhuber, Angelika; Drexler, Wolfgang; Andersen, Peter E.; Petersen, Paul Michael

2014-02-01

Many applications, e.g., within biomedicine stand to benefit greatly from the development of diode laser-based multi- Watt efficient compact green laser sources. The low power of existing diode lasers in the green area (about 100 mW) means that the most promising approach remains nonlinear frequency conversion of infrared tapered diode lasers. Here, we describe the generation of 3.5 W of diffraction-limited green light from SHG of a single tapered diode laser, itself yielding 10 W at 1063 nm. This SHG is performed in single pass through a cascade of two PPMgO:LN crystals with re-focusing and dispersion compensating optics between the two nonlinear crystals. In the low-power limit, such a cascade of two crystals has the theoretical potential for generation of four times as much power as a single crystal without adding significantly to the complexity of the system. The experimentally achieved power of 3.5 W corresponds to a power enhancement greater than 2 compared to SHG in each of the crystals individually and is the highest visible output power generated by frequency conversion of a single diode laser. Such laser sources provide the necessary pump power for biophotonics applications, such as optical coherence tomography or multimodal imaging devices, e.g., FTCARS-OCT, based on a strongly pumped ultrafast Ti:Sapphire laser.

Delayed avalanche breakdown of high-voltage silicon diodes: Various structures exhibit different picosecond-range switching behavior

NASA Astrophysics Data System (ADS)

Brylevskiy, Viktor; Smirnova, Irina; Gutkin, Andrej; Brunkov, Pavel; Rodin, Pavel; Grekhov, Igor

2017-11-01

We present a comparative study of silicon high-voltage diodes exhibiting the effect of delayed superfast impact-ionization breakdown. The effect manifests itself in a sustainable picosecond-range transient from the blocking to the conducting state and occurs when a steep voltage ramp is applied to the p+-n-n+ diode in the reverse direction. Nine groups of diodes with graded and abrupt pn-junctions have been specially fabricated for this study by different techniques from different Si substrates. Additionally, in two groups of these structures, the lifetime of nonequilibrium carriers was intentionally reduced by electron irradiation. All diodes have identical geometrical parameters and similar stationary breakdown voltages. Our experimental setup allows measuring both device voltage and current during the kilovolt switching with time resolution better than 50 ps. Although all devices are capable of forming a front with kilovolt amplitude and 100 ps risetime in the in-series load, the structures with graded pn-junctions have anomalously large residual voltage. The Deep Level Transient Spectroscopy study of all diode structures has been performed in order to evaluate the effect of deep centers on device performance. It was found that the presence of deep-level electron traps negatively correlates with parameters of superfast switching, whereas a large concentration of recombination centers created by electron irradiation has virtually no influence on switching characteristics.

4H-SiC p i n diodes grown by sublimation epitaxy in vacuum (SEV) and their application as microwave diodes

NASA Astrophysics Data System (ADS)

Camara, N.; Zekentes, K.; Zelenin, V. V.; Abramov, P. L.; Kirillov, A. V.; Romanov, L. P.; Boltovets, N. S.; Krivutsa, V. A.; Thuaire, A.; Bano, E.; Tsoi, E.; Lebedev, A. A.

2008-02-01

Sublimation epitaxy under vacuum (SEV) was investigated as a method for growing 4H-SiC epitaxial structures for p-i-n diode fabrication. The SEV-grown 4H-SiC material was investigated with scanning electron microscopy (SEM), atomic force microscopy (AFM), x-ray diffraction, photo-luminescence spectroscopy (PL), cathodo-luminescence (CL) spectroscopy, photocurrent method for carrier diffusion length determination, electro-luminescence microscopy (EL), deep level transient spectroscopy (DLTS), C-V profiling and Hall-effect measurements. When possible, the same investigation techniques were used in parallel with similar layers grown by chemical vapour deposition (CVD) epitaxy and the physical properties of the two kind of epitaxied layers were compared. p-i-n diodes were fabricated in parallel on SEV and CVD-grown layers and showed close electrical performances in dc mode in term of capacitance, resistance and transient time switching, despite the lower mobility and the diffusion length of the SEV-grown layers. X-band microwave switches based on the SEV-grown p-i-n diodes have been demonstrated with insertion loss lower than 4 dB and an isolation higher than 17 dB. These single-pole single-throw (SPST) switches were able to handle a pulsed power up to 1800 W in isolation mode, similar to the value obtained with switches incorporating diodes with CVD-grown layers.

Temperature-Dependent and Gate-Tunable Rectification in a Black Phosphorus/WS2 van der Waals Heterojunction Diode.

PubMed

Dastgeer, Ghulam; Khan, Muhammad Farooq; Nazir, Ghazanfar; Afzal, Amir Muhammad; Aftab, Sikandar; Naqvi, Bilal Abbas; Cha, Janghwan; Min, Kyung-Ah; Jamil, Yasir; Jung, Jongwan; Hong, Suklyun; Eom, Jonghwa

2018-04-18

Heterostructures comprising two-dimensional (2D) semiconductors fabricated by individual stacking exhibit interesting characteristics owing to their 2D nature and atomically sharp interface. As an emerging 2D material, black phosphorus (BP) nanosheets have drawn much attention because of their small band gap semiconductor characteristics along with high mobility. Stacking structures composed of p-type BP and n-type transition metal dichalcogenides can produce an atomically sharp interface with van der Waals interaction which leads to p-n diode functionality. In this study, for the first time, we fabricated a heterojunction p-n diode composed of BP and WS 2 . The rectification effects are examined for monolayer, bilayer, trilayer, and multilayer WS 2 flakes in our BP/WS 2 van der Waals heterojunction diodes and also verified by density function theory calculations. We report superior functionalities as compared to other van der Waals heterojunction, such as efficient gate-dependent static rectification of 2.6 × 10 4 , temperature dependence, thickness dependence of rectification, and ideality factor of the device. The temperature dependence of Zener breakdown voltage and avalanche breakdown voltage were analyzed in the same device. Additionally, superior optoelectronic characteristics such as photoresponsivity of 500 mA/W and external quantum efficiency of 103% are achieved in the BP/WS 2 van der Waals p-n diode, which is unprecedented for BP/transition metal dichalcogenides heterostructures. The BP/WS 2 van der Waals p-n diodes have a profound potential to fabricate rectifiers, solar cells, and photovoltaic diodes in 2D semiconductor electronics and optoelectronics.

Little evidence for the use of diode lasers as an adjunct to non-surgical periodontal therapy.

PubMed

Dederich, Douglas N

2015-03-01

Medline, PubMed, the Cochrane Central Register of Controlled Trials (CENTRAL) and Embase databases. Randomised controlled trials (RCTs) using thermal diode lasers as an adjunct to non-surgical conventional periodontal initial therapy conducted in patients ≥18 years old written in English or Dutch were considered. Study assessment data extraction and quality assessment was carried out independently by two reviewers. The main outcome variables were probing pocket depth (PPD) and clinical attachment loss (CAL), but plaque scores (PS), bleeding scores (BS) and the Gingival Index (GI) were also considered. Meta-analysis was carried out using a random effects model. Nine studies involving 247 patients were included. Seven studies were of split mouth design and two were parallel group studies. The study designs showed considerable heterogeneity and follow up ranged from six weeks to six months. Meta-analysis found no significant effect on PPD, CAL and PS. There was however a significant effect for GI and BS favouring adjunctive use of the diode laser. The collective evidence regarding adjunctive use of the diode laser with SRP indicates that the combined treatment provides an effect comparable to that of SRP alone. With respect to BS the results showed a small but significant effect favouring the diode laser, however, the clinical relevance of this difference remains uncertainStandard . This systematic review questions the adjunctive use of diode laser with traditional mechanical modalities of periodontal therapy in patients with periodontitis. The strength of the recommendation for the adjunctive use of the diode laser is considered to be 'moderate' for changes in PPD and CAL.

IMPATT Diodes Based on 〈111〉, 〈100〉, and 〈110〉 Oriented GaAs: A Comparative Study to Search the Best Orientation for Millimeter-Wave Atmospheric Windows

PubMed Central

Banerjee, Bhadrani; Tripathi, Anvita; Das, Adrija; Singh, Kumari Alka; Banerjee, J. P.

2015-01-01

The authors have carried out the large-signal (L-S) simulation of double-drift region (DDR) impact avalanche transit time (IMPATT) diodes based on 〈111〉, 〈100〉, and 〈110〉 oriented GaAs. A nonsinusoidal voltage excited (NSVE) L-S simulation technique is used to investigate both the static and L-S performance of the above-mentioned devices designed to operate at millimeter-wave (mm-wave) atmospheric window frequencies, such as 35, 94, 140, and 220 GHz. Results show that 〈111〉 oriented GaAs diodes are capable of delivering maximum RF power with highest DC to RF conversion efficiency up to 94 GHz; however, the L-S performance of 〈110〉 oriented GaAs diodes exceeds their other counterparts while the frequency of operation increases above 94 GHz. The results presented in this paper will be helpful for the future experimentalists to choose the GaAs substrate of appropriate orientation to fabricate DDR GaAs IMPATT diodes at mm-wave frequencies. PMID:27347524

Update on the use of diode laser in the management of benign prostate obstruction in 2014.

PubMed

Lusuardi, Lukas; Mitterberger, Michael; Hruby, Stephan; Kunit, Thomas; Kloss, Birgit; Engelhardt, Paul F; Sieberer, Manuela; Janetschek, Günter

2015-04-01

To determine the status quo in respect of various diode lasers and present the techniques in use, their results and complications. We assess how these compare with transurethral resection of the prostate and other types of laser in randomized controlled trials (RCTs). When adequate RCTs were not available, case studies and reports were evaluated. Laser for the treatment of benign prostatic hyperplasia (BPH) has aroused the interest and curiosity of urologists as well as patients. The patient associates the term laser with a successful and modern procedure. The journey that started with coagulative necrosis of prostatic adenoma based on neodymium: yttrium-aluminum-garnet (Nd:YAG) laser has culminated in endoscopic "enucleation" with holmium laser. Diode laser is being used in urology for about 10 years now. Various techniques have been employed to relieve bladder outlet obstruction due to BPH. The diode laser scenario is marked by a diversity of surgical techniques and wavelengths. We summarize the current published literature in respect of functional results and complications. More randomized controlled studies are needed to determine the position and the ideal technique of diode laser treatment for BPH.

Inverse design of an ultra-compact broadband optical diode based on asymmetric spatial mode conversion

PubMed Central

Callewaert, Francois; Butun, Serkan; Li, Zhongyang; Aydin, Koray

2016-01-01

The objective-first inverse-design algorithm is used to design an ultra-compact optical diode. Based on silicon and air only, this optical diode relies on asymmetric spatial mode conversion between the left and right ports. The first even mode incident from the left port is transmitted to the right port after being converted into an odd mode. On the other hand, same mode incident from the right port is reflected back by the optical diode dielectric structure. The convergence and performance of the algorithm are studied, along with a transform method that converts continuous permittivity medium into a binary material design. The optimal device is studied with full-wave electromagnetic simulations to compare its behavior under right and left incidences, in 2D and 3D settings as well. A parametric study is designed to understand the impact of the design space size and initial conditions on the optimized devices performance. A broadband optical diode behavior is observed after optimization, with a large rejection ratio between the two transmission directions. This illustrates the potential of the objective-first inverse-design method to design ultra-compact broadband photonic devices. PMID:27586852

New Analysis and Design of a RF Rectifier for RFID and Implantable Devices

PubMed Central

Liu, Dong-Sheng; Li, Feng-Bo; Zou, Xue-Cheng; Liu, Yao; Hui, Xue-Mei; Tao, Xiong-Fei

2011-01-01

New design and optimization of charge pump rectifiers using diode-connected MOS transistors is presented in this paper. An analysis of the output voltage and Power Conversion Efficiency (PCE) is given to guide and evaluate the new design. A novel diode-connected MOS transistor for UHF rectifiers is presented and optimized, and a high efficiency N-stage charge pump rectifier based on this new diode-connected MOS transistor is designed and fabricated in a SMIC 0.18-μm 2P3M CMOS embedded EEPROM process. The new diode achieves 315 mV turn-on voltage and 415 nA reverse saturation leakage current. Compared with the traditional rectifier, the one based on the proposed diode-connected MOS has higher PCE, higher output voltage and smaller ripple coefficient. When the RF input is a 900-MHz sinusoid signal with the power ranging from −15 dBm to −4 dBm, PCEs of the charge pump rectifier with only 3-stage are more than 30%, and the maximum output voltage is 5.5 V, and its ripple coefficients are less than 1%. Therefore, the rectifier is especially suitableto passive UHF RFID tag IC and implantable devices. PMID:22163968

New analysis and design of a RF rectifier for RFID and implantable devices.

PubMed

Liu, Dong-Sheng; Li, Feng-Bo; Zou, Xue-Cheng; Liu, Yao; Hui, Xue-Mei; Tao, Xiong-Fei

2011-01-01

New design and optimization of charge pump rectifiers using diode-connected MOS transistors is presented in this paper. An analysis of the output voltage and Power Conversion Efficiency (PCE) is given to guide and evaluate the new design. A novel diode-connected MOS transistor for UHF rectifiers is presented and optimized, and a high efficiency N-stage charge pump rectifier based on this new diode-connected MOS transistor is designed and fabricated in a SMIC 0.18-μm 2P3M CMOS embedded EEPROM process. The new diode achieves 315 mV turn-on voltage and 415 nA reverse saturation leakage current. Compared with the traditional rectifier, the one based on the proposed diode-connected MOS has higher PCE, higher output voltage and smaller ripple coefficient. When the RF input is a 900-MHz sinusoid signal with the power ranging from -15 dBm to -4 dBm, PCEs of the charge pump rectifier with only 3-stage are more than 30%, and the maximum output voltage is 5.5 V, and its ripple coefficients are less than 1%. Therefore, the rectifier is especially suitable to passive UHF RFID tag IC and implantable devices.

Investigating and Optimizing Carrier Transport, Carrier Distribution, and Efficiency Droop in GaN-based Light-emitting Diodes

NASA Astrophysics Data System (ADS)

Zhu, Di

2011-12-01

The recent tremendous boost in the number and diversity of applications for light-emitting diodes (LEDs) indicates the emergence of the next-generation lighting and illumination technology. The rapidly improving LED technology is becoming increasingly viable especially for high-power applications. However, the greatest roadblock before finally breaching the main defensive position of conventional fluorescent and incandescent lamps still remains: GaN-based LEDs encounter a significant decrease in efficiency as the drive current increases, and this phenomenon is known as the efficiency droop. This dissertation focuses on uncovering the physical cause of efficiency droop in GaN-based LEDs and looks for solutions to it. GaN-based multiple-quantum-well (MQW) LEDs usually have abnormally high diode-ideality factors. Investigating the origin of the high diode-ideality factors could help to better understand the carrier transport in the LED MQW active region. We investigate the ideality factors of GaInN LEDs with different numbers of doped quantum barriers (QBs). Consistent with the theory, a decrease of the ideality factor as well as a reduction in forward voltage is found with increasing number of doped QBs. Experimental and simulation results indicate that the band profiles of QBs in the active region have a significant impact on the carrier transport mechanism, and the unipolar heterojunctions inside the active region play an important role in determining the diode-ideality factor. This dissertation will discuss several mechanisms leading to electron leakage which could be responsible for the efficiency droop. We show that the inefficient electron capture, the electron-attracting properties of polarized EBL, the inherent asymmetry in electron and hole transport and the inefficient EBL p-doping at high Al contents severely limit the ability to confine electrons to the MQWs. We demonstrate GaInN LEDs employing tailored Si doping in the QBs with strongly enhanced high-current efficiency and reduced efficiency droop. Compared with 4-QB-doped LEDs, 1-QB-doped LEDs show a 37.5% increase in light-output power at high currents. Consistent with the measurements, simulation shows a shift of radiative recombination among the MQWs and a reduced electron leakage current into the p-type GaN when fewer QBs are doped. The results can be attributed to a more symmetric carrier transport and uniform carrier distribution which help to reduce electron leakage and thus reduce the efficiency droop. In this dissertation, artificial evolution is introduced to the LED optimization process which combines a genetic algorithm (GA) and device-simulation software. We show that this approach is capable of generating novel concepts in designing and optimizing LED devices. Application of the GA to the QB-doping in the MQWs yields optimized structures which is consistent with the tailored QB doping experiments. Application of the GA to the EBL region suggests a novel structure with an inverted sheet charge at the spacer-EBL interface. The resulting repulsion of electrons can significantly reduce electron leakage and enhance the efficiency. Finally, dual-wavelength LEDs, which have two types of quantum wells (QWs) emitting at two different wavelengths, are experimentally characterized and compared with numerical simulations. These dual-wavelength LEDs allow us to determine which QW emits most of the light. An experimental observation and a quantitative analysis of the radiative recombination shift within the MQW active region are obtained. In addition, an injection-current dependence of the radiative recombination shift is predicted by numerical simulations and indeed observed in dual-wavelength LEDs. This injection-current dependence of the radiative recombination distribution can be explained very well by incorporating quantum-mechanical tunneling of carriers into and through the QBs into to the classical drift-diffusion model. In summary, using the LEDs with tailored QB doping and dual-wavelength LEDs, we investigate the origin of the high diode-ideality factor of LEDs and gain insight on the control of carrier transport, carrier distribution, and radiative recombination in the LED MQW active region. Our results provide solid evidence on the effectiveness of the GA in the LED device optimization process. In addition, the innovative EBL structure optimized by the GA sheds light on further paths for the optimization of LED design. Our results are the starting point of applying artificial evolution to practical semiconductor devices, opening new perspectives for complex semiconductor device optimization and enabling breakthroughs in high-performance LED design.

High-brightness power delivery for fiber laser pumping: simulation and measurement of low-NA fiber guiding

NASA Astrophysics Data System (ADS)

Yanson, Dan; Levy, Moshe; Peleg, Ophir; Rappaport, Noam; Shamay, Moshe; Dahan, Nir; Klumel, Genady; Berk, Yuri; Baskin, Ilya

2015-02-01

Fiber laser manufacturers demand high-brightness laser diode pumps delivering optical pump energy in both a compact fiber core and narrow angular content. A pump delivery fiber of a 105 μm core and 0.22 numerical aperture (NA) is typically used, where the fiber NA is under-filled to ease the launch of laser diode emission into the fiber and make the fiber tolerant to bending. At SCD, we have developed multi-emitter fiber-coupled pump modules that deliver 50 W output from a 105 μm, 0.15 NA fiber at 915, 950 and 976 nm wavelengths enabling low-NA power delivery to a customer's fiber laser network. In this work, we address the challenges of coupling and propagating high optical powers from laser diode sources in weakly guiding step-index multimode fibers. We present simulations of light propagation inside the low-NA multimode fiber for different launch conditions and fiber bend diameters using a ray-racing tool and demonstrate how these affect the injection of light into cladding-bounded modes. The mode filling at launch and source NA directly limit the bend radius at which the fiber can be coiled. Experimentally, we measure the fiber bend loss using our 50 W fiber-coupled module and establish a critical bend diameter in agreement with our simulation results. We also employ thermal imaging to investigate fiber heating caused by macro-bends and angled cleaving. The low mode filling of the 0.15 NA fiber by our brightness-enhanced laser diodes allows it to be coiled with diameters down to 70 mm at full operating power despite the low NA and further eliminates the need for mode-stripping at fiber combiners and splices downstream from our pump modules.

Outcomes after 1.9-microm diode laser-assisted anastomosis in reconstructive microsurgery: results in 27 patients.

PubMed

Leclère, Franck M P; Schoofs, Michel; Buys, Bruno; Mordon, Serge R

2010-04-01

Microvascular surgery has become an important method for reconstructing surgical defects resulting from trauma, tumors, or burns. The most important factor for successful free flap transfer is a well-executed anastomosis. This study was performed to review the authors' experience with a 1.9-microm diode laser in microsurgery, with special attention to outcomes and performance of the technique. Between January of 2005 and December of 2007, 27 patients underwent microsurgery with a 1.9-microm diode laser at the authors' institute. The patients had a mean age of 31 years (range, 2 to 59 years); 14 patients were women and 13 patients were men. This technique was used for digital replantations (n = 2) and for free flap transfer (n = 27). Causes of the defects were trauma (n = 14), tumor (n = 9), congenital (n = 2), burn (n = 1), infection (n = 1), arthritis (n = 1), and dog bite (n = 1). Laser-assisted microvascular anastomosis was performed with a 1.9-microm diode laser after placement of equidistant stitches. The following parameters were used: spot size, 400 microm; power, 125 mW; time depending on vessel size (0.8 to 1.8 mm); and fluence varying from 70 to 200 J/cm. Three surgical revisions following hematoma and one rupture of the arterial anastomosis leading to a free deep inferior epigastric perforator flap necrosis resulting from high-dose radiotherapy before surgery occurred after laser-assisted microvascular anastomosis, accounting for an overall success rate of 96.6 percent. This study reports the numerous benefits of the technique: easier performance of vascular anastomosis with difficult access, decrease of reperfusion bleeding and complications, and a short learning curve.

Theory and simulation of electron beam dynamics in the AWE superswarf magnetically immersed diode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Oliver, B.V.; Welch, D.R.; Olson, C.L.

1999-07-01

Results from numerical simulation and analytic theory of magnetically immersed diode behavior on the United Kingdom's Atomic Weapons Establishment (AWE) Superswarf accelerator are presented. The immersed diode consists of a cylindrical needle point cathode immersed in a strong {approximately}10--20 T solenoidal magnetic field. The anode-cathode (A-K) accelerating gap is held at vacuum and is {approximately}5--10 cm in length, with the anode/target located at the mid-plane of the solenoid. Typical accelerator parameters are 5--6 MeV and 40 kA. Ions emitted from the anode target stream toward the cathode and interact strongly with the electron beam. Collective oscillations between the beam electronsmore » and counter-streaming ions are driven unstable and results in a corkscrew rotation of the beam, yielding a time-integrated spot size substantially larger than that expected from single particle motion. This magnetized ion-hose instability is three dimensional. On the other hand, beam transverse temperature variations, although slightly enhanced in 3D, are primarily due to changes in the effective potential at the cathode (a combination of both the electrostatic and vector potential) and are manifest in 2D. Simulation studies examining spot and dose variation with varying cathode diameter and A-K gap distance are presented and confirm the above mentioned trends. Conclusions are that the diode current is determined by standard di-polar space-charge limited emissions, the minimum beam spot-size is limited by the ion-hose instability saturation amplitude, and the beam transverse temperature at the target is a function of the initial conditions on the cathode. Comparison to existing data will also be presented.« less

Characterization of a new unshielded diode for small field dosimetry under flattening filter free beams.

PubMed

Reggiori, Giacomo; Mancosu, Pietro; Suchowerska, Natalka; Lobefalo, Francesca; Stravato, Antonella; Tomatis, Stefano; Scorsetti, Marta

2016-02-01

To characterize the performance of a new unshielded silicon diode (Razor-IBA) for dose measurements in small flattening filter free beams. The Razor has an active volume of 0.6 mm in diameter and 20 µm in length. The detector response stability in measured dose, dose rate, dose per pulse, and dark current were evaluated. The detector response in square fields (0.6-5.0 cm) was determined using PDD curves, axial beam profiles and output ratios. The performances were compared to that of the previously available SFD-IBA and PFD-IBA diodes. The Razor short term stability relative to the SFD was much improved (<±0.1% after 1.2 kGy). The linearity was <±1% (0.05-30 Gy range) and the dose rate dependence was <±0.5% (4-24 Gy/min range). The dose per pulse dependence was <±0.7% (0.08-0.21 cGy/pulse range). The PDDs measured with Razor and PFD differed <1%. A larger dark current was observed with increase in dose (0.0025 pA/Gy) compared to the SFD (0.0002 pA/Gy). This characteristic is attributed to an increased concentration of recombination centers. The beam profile showed good agreement with the SFD. Penumbra differences were <±0.3 mm relative to PFD, with a slight overestimation of the tails (<1%), due to the absence of diode shielding. Output ratios were in good agreement for fields up to 5 × 5 cm(2) (<1%). The Razor diode has the same spatial resolution and performance reliability as its predecessor (SFD), but exhibits the additional advantage of improved stability. These features make the Razor diode detector a good candidate for small field dosimetry. Copyright © 2016 Associazione Italiana di Fisica Medica. Published by Elsevier Ltd. All rights reserved.

Clinical Evaluation of Nd:YAG and 685-nm Diode Laser Therapy for Desensitization of Teeth with Gingival Recession

PubMed Central

Canakci, Varol; Ozdemir, Atilla; Kaya, Yavuz

2009-01-01

Abstract Objectives: The aim of this study was to evaluate the effectiveness of two types of lasers, the Nd:YAG laser and the 685-nm diode laser, as dentin desensitizers as well as both the immediate and late therapeutic effects on teeth with gingival recession. Materials and Methods: The study was conducted on 56 teeth in 14 patients with Miller's class 1 and 2 gingival recession with clinically elicitable dentin hypersensitivity (DH). The patients were divided into two groups: a Nd:YAG-laser-treated group and a 685-nm diode laser-treated group. DH was assessed by means of an air stimulus, and a visual analog scale (VAS) was used to measure DH. The selected teeth in the two groups received laser therapy for three sessions. Teeth subjected to Nd:YAG-laser treatment were irradiated at 1 W and 10 Hz for 60 sec at 1064 nm, and those receiving 685-nm diode laser treatment were irradiated at 25 mW and 9 Hz for 100 sec. Results: Significant reductions in DH occurred at all time points measured during the three treatment sessions in both treatment groups. Comparing the means of the responses in the three treatment sessions for the two groups revealed that the Nd:YAG laser group had a higher degree of desensitization compared to the other group (p < 0.01). The immediate and late therapeutic effects of the Nd:YAG laser were more evident than those of the 685-nm diode laser. Conclusions: Both of these lasers can be used to reduce DH without adverse effects. Desensitization of teeth with gingival recession with the Nd:YAG laser was more effective than with the diode laser. The Nd:YAG laser appears to be a promising new tool for successfully reducing DH. PMID:19281413

SU-E-T-485: In Vivo Dosimetry with EBT3 Radiochromic Films for TBI Treatments

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lozares, S; Gracia, M; Olasolo, J

2015-06-15

Purpose: Total body irradiation (TBI) is a technique that requires special equipment to control “in vivo” the dose to the patient because it is a complex technique performed in extraordinary conditions. There are several devices to perform this task (diodes, TLDs, ionization chambers, MOSFET). In this paper we study the possibility of performing these measurements with radiochromic films EBT3 properly calibrated. This method has been compared to the PTW diodes system for TBI. Methods: Once made the TC to the patients, we measured different thicknesses of the relevant areas of the body (head, neck, chest with or without arms, umbilicusmore » area, knees and ankles); for each of these thicknesses we measured dose rate (cGy / UM) in RW3 phantom, in TBI conditions, with ionization chamber in the center; in turn, the input diode and the output of each configuration is placed to assign dose to each set of diodes. Movie calibration is performed according to manufacturer’s recommendations but TBI conditions. The dose at the center of each thickness compared to a linear interpolation of the dose at the entrance and exit, resulting in an adequate approximation. Finally in each session for each patient put a piece of film (2×2 cm2) at the entrance and another at the exit in each area, obtaining these readings and interpolating the estimated center dose, as with the diodes. Results: These results show a greater homogeneity in the distribution for use with film and validate the use of the same for this task and, if necessary, to avoid purchasing diode group if they have not. Conclusion: By using radiochromic films for this technique gives us a proper calculation of the dose received by the patient in the absence of other methods, or gives us a second additional track that already used normally.« less

Comparative Evaluation of Efficacy of Iontophoresis with 0.33% Sodium Fluoride Gel and Diode Laser Alone on Occlusion of Dentinal Tubules

PubMed Central

Varma, Siddhartha; Suragimath, Girish; Abbayya, Keshava; Zope, Sameer Anil; Kale, Vishwajeet

2017-01-01

Introduction Dentinal Hypersensitivity (DH) is one of the most commonly encountered clinical problems. Literature reveals no specific therapy to satisfactorily eliminate dentinal hypersensitivity. Aim The aim of this study was to assess and compare the efficacy of iontophoresis with 0.33% Sodium Fluoride (NaF) gel and diode laser alone in dentinal tubule occlusion. Materials and Methods This in vitro study included 20 teeth with intact root surfaces unaltered by extraction procedure for specimen preparation. Each tooth was cleaned, air dried and cut into three sections. Total 60 sections were prepared (30 longitudinal and 30 transverse sections), which were acid etched. In control group, no treatment was carried. In iontophoresis treatment group, samples were inserted into a foam tray containing 0.33 % NaF Gel and subjected to 1.5 mA output current for three minutes. In laser treatment group, specimens were lased with 980 nm diode laser at 0.5 W/PW (62.2J /cm2) in a noncontact mode for 30 seconds. Specimens were evaluated under Scanning Electron Microscope (SEM) at 10KV to 20KV under x 2000, x5000 magnification for surface characteristics and patency of dentinal tubules. Total number of tubules visible, open, completely and partially occluded were recorded in each microphotograph and compared. Results On comparison, laser group showed the least number of open tubules i.e., 130 (31.1%) followed by iontophoresis group, 155 (51.32%) and control group 417 (100%). Conclusion Diode laser application provided better results as compared to iontophoresis on occlusion of dentinal tubules. Hence, it can be used to treat the patients with DH. PMID:28969290

Comparative Evaluation of Efficacy of Iontophoresis with 0.33% Sodium Fluoride Gel and Diode Laser Alone on Occlusion of Dentinal Tubules.

PubMed

Patil, Anup Raghunath; Varma, Siddhartha; Suragimath, Girish; Abbayya, Keshava; Zope, Sameer Anil; Kale, Vishwajeet

2017-08-01

Dentinal Hypersensitivity (DH) is one of the most commonly encountered clinical problems. Literature reveals no specific therapy to satisfactorily eliminate dentinal hypersensitivity. The aim of this study was to assess and compare the efficacy of iontophoresis with 0.33% Sodium Fluoride (NaF) gel and diode laser alone in dentinal tubule occlusion. This in vitro study included 20 teeth with intact root surfaces unaltered by extraction procedure for specimen preparation. Each tooth was cleaned, air dried and cut into three sections. Total 60 sections were prepared (30 longitudinal and 30 transverse sections), which were acid etched. In control group, no treatment was carried. In iontophoresis treatment group, samples were inserted into a foam tray containing 0.33 % NaF Gel and subjected to 1.5 mA output current for three minutes. In laser treatment group, specimens were lased with 980 nm diode laser at 0.5 W/PW (62.2J /cm 2 ) in a noncontact mode for 30 seconds. Specimens were evaluated under Scanning Electron Microscope (SEM) at 10KV to 20KV under x 2000, x5000 magnification for surface characteristics and patency of dentinal tubules. Total number of tubules visible, open, completely and partially occluded were recorded in each microphotograph and compared. On comparison, laser group showed the least number of open tubules i.e., 130 (31.1%) followed by iontophoresis group, 155 (51.32%) and control group 417 (100%). Diode laser application provided better results as compared to iontophoresis on occlusion of dentinal tubules. Hence, it can be used to treat the patients with DH.

Comparative clinical study using laser and LED-therapy for orofacial pain relief: dentin hypersensitivity and cervicogenic headache

NASA Astrophysics Data System (ADS)

Lizarelli, Rosane F. Z.; Pizzo, Renata C. A.; Florez, Fernando L. E.; Grecco, Clovis; Speciali, Jose G.; Bagnato, Vanderlei S.

2015-06-01

Considering several clinical situations, low intensity laser therapy has been widely applied in pain relief or analgesia mechanism. With the advent of new LED-based (light emitting diode) light sources, the need of further clinical experiments aiming to compare the effectiveness among them is paramount. The LED system therapeutic use can be denominated as LEDT - Light Emitting Diode Therapy. This study proposed two clinical evaluations of pain relief effect: to dentin hypersensitivity and to cervicogenic headache using different sources of lasers (low and high intensity) and light emitting diodes (LEDs), one emitting at the spectral band of red (630+/- 5nm) and the other one at infrared band (880+/- 5nm). Two different clinical studies were performed and presented interesting results. Considering dentin hypersensitivity, red and infrared led were so effective than the control group (high intensity laser system); by the other side, considering cervicogenic headache, control group (infrared laser) was the best treatment in comparison to red and infrared led system.

Evaluation of temperature change during antimicrobial photodynamic therapy with two different photosensitizers in dental caries.

PubMed

Mirzaie, Mansoreh; Yassini, Esmael; Ashnagar, Sajjad; Hadadi, Azadeh; Chiniforush, Nasim

2016-06-01

Many attempts have been made in elimination of bacteria in infected and demineralized dentin to not only provide efficient bactericidal potential, but to have minimal damage for tooth structure. The aim of this study was to assess the temperature change during aPDT with ICG and TBO compared with conventional Diode laser irradiation. 48 premolar teeth which were selected for this study. A class I cavity was drilled in each teeth, with dimensions of 2mm width, 4mm length and depth of 2.5-3.5mm, providing a dentinal wall of approximately 0.5mm for pulp chamber. Then teeth were randomly allocated in 4 experimental groups (n=12); Group 1: TBO+LED, Group 2: ICG+Diode Laser, Group 3: Diode laser with output power of 0.5W, Group 4: Diode laser with output power of 1W. Thermocouple device was held by experimenter hand and the sensor was in pulp chamber of the teeth. Heat generated during irradiation was reported on LCD screen by NUX Plus software. Repeated measure ANOVA was used in order to compare the temperature before and after laser application. Tukey HSD was used to compare the results between groups. Temperature was risen for about 0.54±0.05°C for group 1, 1.67±0.14°C for group 2, 4.21±0.83°C for group 3, and 4. 50±0.32°C for group 4. The difference between group 1 & 2, 1 & 3 and 1 & 4 was significant (p<0.0001). According to results of this study, Diode (with or without photosensitizer- 0.5 and 1W) can be safely used as alternative approach for disinfection after caries removal in thermal point of view. Copyright © 2016. Published by Elsevier B.V.

TU-F-BRE-08: Significant Variations in Measured Small Cone Output Factor for FFF Beams

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sudhyadhom, A; Ma, L; Kirby, N

2014-06-15

Purpose: To evaluate the measurement accuracy of several dosimeters for small cone output factors in two SRS/SBRT dedicated systems with Flattening Filter Free (FFF) beams: a Varian TrueBeam STx (TB) and an Accuray CyberKnife VSI (CK). Output factors (OFs) were measured for both machines and for CK, compared against a Monte Carlo model. Methods: Dose measurements were taken using three different FFF beams (TB 6XFFF, TB 10XFFF, and CK 6XFFF). Three commonly used types of dosimeters were examined in this work: a micro-ion chamber (Exradin A16), two shielded diodes (PTW TN60008 and PTW TN60017), and radiochromic film (Gafchromic EBT2). Measuredmore » OFs from these dosimeters were compared with each other and OFs measured with an Exradin W1 scintillator. Monte Carlo determined correction factors for the CK beam for the micro-ion chamber and diodes were applied to the respective OF measurements and compared against scintillator measured OFs corrected for volume averaging. Results: OFs measured for the smallest fields using the micro-ion chamber, diodes, scintillator, and film varied substantially (with up to a 16% difference between dosimeters). Micro-ion chamber and film OF measurements were up to 9% and 10%, respectively, lower than scintillator measurements for the smallest fields. OF measurements by diode were up to 6% greater than scintillator measurements for the smallest fields. With correction factors, the micro-ion chamber and diode measured OFs showed good agreement with scintillator measured OFs for the CK 6XFFF beam (within 3% and 1.5%, respectively). Conclusion: Uncorrected small field OFs vary significantly with dosimeter. The accuracy of scintillator measurements for small field OFs may be greater than the other dosimeters studied in this work (when uncorrected). Measurements involving EBT2 film may Result in lower accuracy for smaller fields (less than 10mm). Care should be taken in the choice of the dosimeter used for small field OF measurements.« less

Characterization and Modeling of Electrical Response of Electrode Catalyzed Reactions in AIGaN/GaN-Based Gas Sensors

NASA Astrophysics Data System (ADS)

Melby, Jacob H.

AlGaN/GaN high electron mobility transistors (HEMT) and AlGaN/GaN diodes have promise for use as hydrogen and hydrocarbon sensors for a variety of industrial, military, and commercial applications. These semiconductor-based sensors have a number of advantages over other sensor technologies, such as the ability to operate at high temperatures, in corrosive environments, or under ionizing radiation. The high sensitivity of these devices to hydrogen-containing gases is associated with polarization differences within the AlGaN/GaN heterostructure that give rise to the formation of a two-dimensional electron gas (2DEG); exposure of the device to hydrogen changes the density of the 2DEG, which can be detected in a HEMT or diode structure. Although sensitivity to a range of gases has been reported, the factors that influence the behavior of the sensors are not well studied. The overarching goals of the research that follows were to determine how gas exposure conditions affect sensor behavior, to characterize and model the relationship between the electrical response of the sensors and the external gaseous environment, and to investigate the effects of using different metal catalysts on sensor behavior. The heterostructures used in this work were grown via metalorganic vapor phase epitaxy (MOVPE). Schottky diode and transistor devices employing platinum-group (Pd, Pt, Rh, Ir, Ru, and Os) catalysts were fabricated to allow electrical sensitivity in the presence of hydrogen and hydrogen containing gases. The generation of atomic hydrogen on the catalyst surface results in the rapid formation of hydrogen dipoles at the metal-semiconductor interface, which produces a measurable electronic response. The electrical response of Pt-gated HEMT-based sensors were measured in a flowing gaseous stream consisting of hydrogen in a pure nitrogen diluent at ambient and elevated temperatures. The transistors exhibited excellent transfer characteristics for temperatures ranging from 25°C to 125°C. The absolute current change was measured as a function of hydrogen concentration and compared with simulated curves based on the Langmuir isotherm and four other modified isotherms at a sensor temperature of 125°C. The sensor response was found to monotonically increase for a wide range of hydrogen concentrations (500 ppb to 5 vol%). It was found that the Langmuir isotherm, which treats all hydrogen binding sites as equivalent, was inadequate to describe the sensor response. A simple two-state model involving two distinct hydrogen binding states that have previously been observed in surface studies was found to adequately describe the response of these sensors from 500 ppb to 5 vol% hydrogen in nitrogen. Other modified Langmuir models were also analyzed and compared with the two-state model. While the models based on modified isotherms all yielded good fits to the data, the simpler two-state model (based upon a weakly bound and strongly bound hydrogen atom) and the Sips model (with distribution of states skewed towards higher binding energies) more closely match results from surface studies of dissociative desorption of hydrogen on Pt. Either of these models should therefore serve as a reasonable foundation for understanding and modeling the response of AlGaN/GaN-based hydrogen sensors with Pt catalysts. The electrical response of a Pt-gated HEMT-based sensor was also measured in a flowing gaseous stream consisting of hydrogen in air at elevated temperatures. The sensor response was found to monotonically increase for a narrow range of hydrogen pressures (1000 ppm to 4 vol%). Oxygen is found to decrease sensor response magnitude and increase the sensor response time. A modified Langmuir isotherm was found to adequately describe the influence of oxygen on a Pt-gated HEMT-based sensor under a narrow range of conditions. Additional sensor measurements were conducted on AlGaN/GaN diode sensors employing a variety of platinum-group catalysts. The influence of oxygen on the sensor response was found to be highly dependent upon the chemistry of hydrogen-oxygen interaction on the catalyst interface. A sensor diode array was fabricated using a ternary Pdx CuyAu1-x-y composition spread alloy catalyst and tested in a flowing gaseous stream consisting of pure hydrogen in nitrogen at room temperature. The resulting diode sensitivity was mapped as a function of composition and revealed intriguing hot spots of hydrogen sensitivity. Numerous technological challenges prevented further exploration of the ternary alloy spread; however, the preliminary results of this structure suggest that a reduction in hydrogen binding energy on the surface can result in a substantial increase in hydrogen dipoles at the metal semiconductor interface. Sensitivity to methane and ethylene was demonstrated using AlGaN/GaN-based sensors. Detection of methane and ethylene require elevated temperatures to break the C-H bond and produce atomic hydrogen. The sensor response is significantly more complicated than hydrogen and not always well-behaved with respect to temperature and time. XPS measurements conducted at CMU indicate a buildup of carbon on the platinum surface upon hydrocarbon exposure, trending toward a saturated carbon content. Lastly, operation of a diode sensor was examined in-situ under high hydrostatic pressure (2000psi) in both pure water and helium. Numerous stability issues were addressed in the course of these experiments. The steady-state influence of hydrostatic pressures on the diode sensor was found to be negligible in the absence of hydrogen. Hydrogen sensitivity was demonstrated in pure water with a hydrogen overpressure for devices employing an epoxy membrane. The same diode device failed to detect a large methane overpressure in water at room temperature and water at 80°C.

High repetition-rate Q-switched and intracavity doubled diode-pumped Nd:YAG laser

NASA Technical Reports Server (NTRS)

Hemmati, Hamid; Lesh, James R.

1992-01-01

A Nd:YAG laser was end pumped with 2.2 W of continuous-wave (CW) diode laser output. Efficient operation of the laser at high repetition rates was emphasized. This laser provides 890 mW of TEM00 CW output at 1064 nm, and 340 mW of 532 nm average power at a Q-switched repetition rate of 25 kHz. Experimental data are compared with analysis.

Thermally evaporated hybrid perovskite for hetero-structured green light-emitting diodes

NASA Astrophysics Data System (ADS)

Mariano, Fabrizio; Listorti, Andrea; Rizzo, Aurora; Colella, Silvia; Gigli, Giuseppe; Mazzeo, Marco

2017-10-01

Thermal evaporation of green-light emitting perovskite (MaPbBr3) films is reported. Morphological studies show that a soft thermal treatment is needed to induce an outstanding crystal growth and film organization. Hetero-structured light-emitting diodes, embedding as-deposited and annealed MAPbBr3 films as active layers, are fabricated and their performances are compared, highlighting that the perovskite evolution is strongly dependent on the growing substrate, too.

Highly Efficient Perovskite-Quantum-Dot Light-Emitting Diodes by Surface Engineering.

PubMed

Pan, Jun; Quan, Li Na; Zhao, Yongbiao; Peng, Wei; Murali, Banavoth; Sarmah, Smritakshi P; Yuan, Mingjian; Sinatra, Lutfan; Alyami, Noktan M; Liu, Jiakai; Yassitepe, Emre; Yang, Zhenyu; Voznyy, Oleksandr; Comin, Riccardo; Hedhili, Mohamed N; Mohammed, Omar F; Lu, Zheng Hong; Kim, Dong Ha; Sargent, Edward H; Bakr, Osman M

2016-10-01

A two-step ligand-exchange strategy is developed, in which the long-carbon- chain ligands on all-inorganic perovskite (CsPbX 3 , X = Br, Cl) quantum dots (QDs) are replaced with halide-ion-pair ligands. Green and blue light-emitting diodes made from the halide-ion-pair-capped quantum dots exhibit high external quantum efficiencies compared with the untreated QDs. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Design and experimental testing of air slab caps which convert commercial electron diodes into dual purpose, correction-free diodes for small field dosimetry

DOE Office of Scientific and Technical Information (OSTI.GOV)

Charles, P. H., E-mail: paulcharles111@gmail.com; Cranmer-Sargison, G.; Thwaites, D. I.

2014-10-15

Purpose: Two diodes which do not require correction factors for small field relative output measurements are designed and validated using experimental methodology. This was achieved by adding an air layer above the active volume of the diode detectors, which canceled out the increase in response of the diodes in small fields relative to standard field sizes. Methods: Due to the increased density of silicon and other components within a diode, additional electrons are created. In very small fields, a very small air gap acts as an effective filter of electrons with a high angle of incidence. The aim was tomore » design a diode that balanced these perturbations to give a response similar to a water-only geometry. Three thicknesses of air were placed at the proximal end of a PTW 60017 electron diode (PTWe) using an adjustable “air cap”. A set of output ratios (OR{sub Det}{sup f{sub c}{sub l}{sub i}{sub n}}) for square field sizes of side length down to 5 mm was measured using each air thickness and compared to OR{sub Det}{sup f{sub c}{sub l}{sub i}{sub n}} measured using an IBA stereotactic field diode (SFD). k{sub Q{sub c{sub l{sub i{sub n,Q{sub m{sub s{sub r}{sup f{sub c}{sub l}{sub i}{sub n},f{sub m}{sub s}{sub r}}}}}}}}} was transferred from the SFD to the PTWe diode and plotted as a function of air gap thickness for each field size. This enabled the optimal air gap thickness to be obtained by observing which thickness of air was required such that k{sub Q{sub c{sub l{sub i{sub n,Q{sub m{sub s{sub r}{sup f{sub c}{sub l}{sub i}{sub n},f{sub m}{sub s}{sub r}}}}}}}}} was equal to 1.00 at all field sizes. A similar procedure was used to find the optimal air thickness required to make a modified Sun Nuclear EDGE detector (EDGEe) which is “correction-free” in small field relative dosimetry. In addition, the feasibility of experimentally transferring k{sub Q{sub c{sub l{sub i{sub n,Q{sub m{sub s{sub r}{sup f{sub c}{sub l}{sub i}{sub n},f{sub m}{sub s}{sub r}}}}}}}}} values from the SFD to unknown diodes was tested by comparing the experimentally transferred k{sub Q{sub c{sub l{sub i{sub n,Q{sub m{sub s{sub r}{sup f{sub c}{sub l}{sub i}{sub n},f{sub m}{sub s}{sub r}}}}}}}}} values for unmodified PTWe and EDGEe diodes to Monte Carlo simulated values. Results: 1.0 mm of air was required to make the PTWe diode correction-free. This modified diode (PTWe{sub air}) produced output factors equivalent to those in water at all field sizes (5–50 mm). The optimal air thickness required for the EDGEe diode was found to be 0.6 mm. The modified diode (EDGEe{sub air}) produced output factors equivalent to those in water, except at field sizes of 8 and 10 mm where it measured approximately 2% greater than the relative dose to water. The experimentally calculated k{sub Q{sub c{sub l{sub i{sub n,Q{sub m{sub s{sub r}{sup f{sub c}{sub l}{sub i}{sub n},f{sub m}{sub s}{sub r}}}}}}}}} for both the PTWe and the EDGEe diodes (without air) matched Monte Carlo simulated results, thus proving that it is feasible to transfer k{sub Q{sub c{sub l{sub i{sub n,Q{sub m{sub s{sub r}{sup f{sub c}{sub l}{sub i}{sub n},f{sub m}{sub s}{sub r}}}}}}}}} from one commercially available detector to another using experimental methods and the recommended experimental setup. Conclusions: It is possible to create a diode which does not require corrections for small field output factor measurements. This has been performed and verified experimentally. The ability of a detector to be “correction-free” depends strongly on its design and composition. A nonwater-equivalent detector can only be “correction-free” if competing perturbations of the beam cancel out at all field sizes. This should not be confused with true water equivalency of a detector.« less

Design and fabrication of two kind of SOI-based EA-type VOAs

NASA Astrophysics Data System (ADS)

Yuan, Pei; Wang, Yue; Wu, Yuanda; An, Junming; Hu, Xiongwei

2018-06-01

SOI-based variable optical attenuators based on electro-absorption mechanism are demonstrated in this paper. Two different doping structures are adopted to realize the attenuation: a structure with a single lateral p-i-n diode and a structure with several lateral p-i-n diodes connected in series. The VOAs with lateral p-i-n diodes connected in series (series VOA) can greatly improve the device attenuation efficiency compared to VOAs with a single lateral p-i-n diode structure (single VOA), which is verified by the experimental results that the attenuation efficiency of the series VOA and the single VOA is 3.76 dB/mA and 0.189 dB/mA respectively. The corresponding power consumption at 20 dB attenuation is 202 mW (series VOA) and 424 mW (single VOA) respectively. The raise time is 34.5 ns (single VOA) and 45.5 ns (series VOA), and the fall time is 37 ns (single VOA) and 48.5 ns (series VOA).

Research and Development of Silicon Carbide (SiC) Junction Recovery Diodes for Picosecond Range, High Power Opening Switches

NASA Astrophysics Data System (ADS)

Grekhov, Igor V.

2002-07-01

This report results from a contract tasking Ioffe Institute as follows: The purpose of the proposed project is to develop, fabricate, test, and characterize silicon carbide power semiconductor opening switches operating in the picosecond range of switch time. Special SiC diode structures will be fabricated and investigated, including Junction Recovery Diodes (JRD). The operation of such diodes is founded on the superfast recovery of the junction's blocking ability after switching the device from forward to reverse bias conditions. Our estimations show that the parameters of JRD devices can be substantially improved in case of SiC devices, compared to both Si and GaAs capabilities. We expect i) to increase the speed of switch operation, the specific commutated power, and the operation frequency repetition; ii) to reduce the weight and size of pulse devices; and iii) to achieve better reliability of the devices due to the unique thermal conductivity and radiation hardness of SiC.

A novel high-resolution chaotic lidar with optical injection to chaotic laser diode

NASA Astrophysics Data System (ADS)

Wang, Yun-cai; Wang, An-bang

2008-03-01

A novel chaotic lidar with high resolution is proposed and studied theoretically. In chaotic lidar system, the chaotic laser emitted from chaotic laser diode is split into two beams: the probe and the reference light. The ranging is achieved by correlating the reference waveform with the delayed probe waveform backscattered from the target. In chaotic lidar systems presented previously, the chaotic signal source is laser diode with optical feedback or with optical injection by another one. The ranging resolution is limited by the bandwidth of chaotic laser which determined by the configuration of chaotic signal source. We proposed a novel chaotic lidar which ranging resolution is enhanced significantly by external optical injected chaotic laser diode. With the bandwidth-enhanced chaotic laser, the range resolution of the chaotic lidar system with optical injection is roughly two times compared with that of without optical injection. The resolution increases with injection strength increasing in a certain frequency detuning range.

The potential of ill-nitride laser diodes for solid-state lighting [Advantages of III-Nitride Laser Diodes in Solid-State Lighting

DOE PAGES

Wierer, Jonathan; Tsao, Jeffrey Y.

2014-09-01

III-nitride laser diodes (LDs) are an interesting light source for solid-state lighting (SSL). Modelling of LDs is performed to reveal the potential advantages over traditionally used light-emitting diodes (LEDs). The first, and most notable, advantage is LDs have higher efficiency at higher currents when compared to LEDs. This is because Auger recombination that causes efficiency droop can no longer grow after laser threshold. Second, the same phosphor-converted methods used with LEDs can also be used with LDs to produce white light with similar color rendering and color temperature. Third, producing white light from direct emitters is equally challenging for bothmore » LEDs and LDs, with neither source having a direct advantage. Lastly, the LD emission is directional and can be more readily captured and focused, leading to the possibility of novel and more compact luminaires. These advantages make LDs a compelling source for future SSL.« less

Three-Dimensional Computed Tomography as a Method for Finding Die Attach Voids in Diodes

NASA Technical Reports Server (NTRS)

Brahm, E. N.; Rolin, T. D.

2010-01-01

NASA analyzes electrical, electronic, and electromechanical (EEE) parts used in space vehicles to understand failure modes of these components. The diode is an EEE part critical to NASA missions that can fail due to excessive voiding in the die attach. Metallography, one established method for studying the die attach, is a time-intensive, destructive, and equivocal process whereby mechanical grinding of the diodes is performed to reveal voiding in the die attach. Problems such as die attach pull-out tend to complicate results and can lead to erroneous conclusions. The objective of this study is to determine if three-dimensional computed tomography (3DCT), a nondestructive technique, is a viable alternative to metallography for detecting die attach voiding. The die attach voiding in two- dimensional planes created from 3DCT scans was compared to several physical cross sections of the same diode to determine if the 3DCT scan accurately recreates die attach volumetric variability

Monolithically integrated active optical devices. [with application in optical communication

NASA Technical Reports Server (NTRS)

Ballantyne, J.; Wagner, D. K.; Kushner, B.; Wojtzcuk, S.

1981-01-01

Considerations relevant to the monolithic integration of optical detectors, lasers, and modulators with high speed amplifiers are discussed. Some design considerations for representative subsystems in the GaAs-AlGaAs and GaInAs-InP materials systems are described. Results of a detailed numerical design of an electro-optical birefringent filter for monolithic integration with a laser diode is described, and early experimental results on monolithic integration of broadband MESFET amplifiers with photoconductive detectors are reported.

Simulation of a Diode Pumped Alkali Laser; a Three Level Numerical Approach

DTIC Science & Technology

2010-03-01

The model will be developed to aid in the research and design of new DPAL systems. A DPAL is a relatively new type of laser which relies on laser...DPAL system to the fidelity required to perform testing and investigation of new systems without the creation of an experimental apparatus. Hence, to...1 26.24 * 10-9 H*Lewis Hz*L; A32@85D = 0; A32@87D = 0; III. Parameters Printed by Mathematica for Students 65 III. Parameters A. Enviromental

Silicon Based Mid Infrared SiGeSn Heterostructure Emitters and Detectors

DTIC Science & Technology

2016-05-16

have investigated the surface plasmon enhancement of the GeSn p-i-n photodiode using gold metal nanostructures. We have conducted numerical...simulation of the plasmonic structure of 2D nano-hole array to tune the surface plasmon resonance into the absorption range of the GeSn active layer. Such a...diode can indeed be enhanced with the plasmonic structure on top. Within the time span of this project, we have completed one iteration of the process

Single diode laser sensor for wide-range H2O temperature measurements.

PubMed

Gharavi, Mohammadreza; Buckley, Steven G

2004-04-01

A single diode laser absorption sensor (near 1477 nm) useful for simultaneous temperature and H2O concentration measurements is developed. The diode laser tunes approximately 1.2 cm(-1) over three H2O absorption transitions in each measurement. The line strengths of the transitions are measured over a temperature range from 468 to 977 K, based on high-resolution absorption measurements in a heated static cell. The results indicate that the selected transitions are suitable for sensitive temperature measurements in atmospheric pressure combustion systems using absorption line ratios. Comparing the results with HITRAN 96 data, it appears that these transitions will be sensitive over a wide range of temperatures (450-2000 K), suggesting applicability for combustion measurements.

Role of the electron blocking layer in the graded-index separate confinement heterostructure nitride laser diodes

NASA Astrophysics Data System (ADS)

Bojarska, Agata; Goss, Jakub; Stanczyk, Szymon; Makarowa, Irina; Schiavon, Dario; Czernecki, Robert; Suski, Tadeusz; Perlin, Piotr

2018-04-01

In this work, we investigate the role of the electron blocking layer (EBL) in laser diodes based on a graded index separate confinement heterostructure. We compare two sets of devices with very different EBL aluminum composition (3% and 12%) and design (graded and superlattice). The results of electro-optical characterization of these laser diodes reveal surprisingly modest role of electron blocking layer composition in determination of the threshold current and the differential efficiency values. However, EBL structure influences the operating voltage, which is decreased for devices with lower EBL and superlattice EBL. We observe also the differences in the thermal stability of devices - characteristic temperature is lower for lasers with 3% Al in EBL.

Influence of surface oxides on hydrogen-sensitive Pd:GaN Schottky diodes

NASA Astrophysics Data System (ADS)

Weidemann, O.; Hermann, M.; Steinhoff, G.; Wingbrant, H.; Lloyd Spetz, A.; Stutzmann, M.; Eickhoff, M.

2003-07-01

The hydrogen response of Pd:GaN Schottky diodes, prepared by in situ and ex situ deposition of catalytic Pd Schottky contacts on Si-doped GaN layers is compared. Ex situ fabricated devices show a sensitivity towards molecular hydrogen, which is about 50 times higher than for in situ deposited diodes. From the analysis of these results, we conclude that adsorption sites for atomic hydrogen in Pd:GaN sensors are provided by an oxidic intermediate layer. In addition, in situ deposited Pd Schottky contacts reveal lower barrier heights and drastically higher reverse currents. We suggest that the passivation of the GaN surface before ex situ deposition of Pd also results in quenching of leakage paths caused by structural defects.

A new OLED SPICE model for pixel circuit simulation in OLED-on-silicon microdisplay design

NASA Astrophysics Data System (ADS)

Bohua, Zhao; Ran, Huang; Jianhui, Bu; Yinxue, Lü; Yiqi, Wang; Fei, Ma; Guohua, Xie; Zhensong, Zhang; Huan, Du; Jiajun, Luo; Zhengsheng, Han; Yi, Zhao

2012-07-01

A new equivalent circuit model of organic-light-emitting-diode (OLED) is proposed. As the single-diode model is able to approximate OLED behavior as well as the multiple-diode model, the new model will be built based on it. In order to make sure that the experimental and simulated data are in good agreement, the constant resistor is exchanged for an exponential resistor in the new model. Compared with the measured data and the results of the other two OLED SPICE models, the simulated I—V characteristics of the new model match the measured data much better. This new model can be directly incorporated into an SPICE circuit simulator and presents good accuracy over the whole operating voltage.

An overview of self-switching diode rectifiers using green materials

NASA Astrophysics Data System (ADS)

Kasjoo, Shahrir Rizal; Zailan, Zarimawaty; Zakaria, Nor Farhani; Isa, Muammar Mohamad; Arshad, Mohd Khairuddin Md; Taking, Sanna

2017-09-01

A unipolar two-terminal nanodevice, known as the self-switching diode (SSD), has recently been demonstrated as a room-temperature rectifier at microwave and terahertz frequencies due to its nonlinear current-voltage characteristic. The planar architecture of SSD not only makes the fabrication process of the device faster, simpler and at a lower cost when compared with other rectifying diodes, but also allows the use of various materials to realize and fabricate SSDs. This includes the utilization of `green' materials such as organic and graphene thin films for environmental sustainability. This paper reviews the properties of current `green' SSD rectifiers with respect to their operating frequencies and rectifying performances, including responsivity and noise-equivalent power of the devices, along with the applications.

Microgravity Diode Laser Spectroscopy Measurements in a Reacting Vortex Ring

NASA Technical Reports Server (NTRS)

Chen, Shin-Juh; Dahm, Werner J. A.; Silver, Joel A.; Piltch, Nancy D.; VanderWal, R. (Technical Monitor)

2001-01-01

The technique of Diode Laser Spectroscopy (DLS) with wavelength modulation is utilized to measure the concentration of methane in reacting vortex rings under microgravity conditions. From the measured concentration of methane, other major species such as water, carbon dioxide, nitrogen, and oxygen can be easily computed under the assumption of equilibrium chemistry with an iterative method called ITAC (Iterative Temperature with Assumed Chemistry). The conserved scalar approach in modelling the coupling between fluid dynamics and combustion is utilized to represent the unknown variables in terms of the mixture fraction and scalar dissipation rate in conjunction with ITAC. Post-processing of the DLS and the method used to compute the species concentration are discussed. From the flame luminosity results, ring circulation appears to increase the fuel consumption rate inside the reacting vortex ring and the flame height for cases with similar fuel volumes but different ring circulations. The concentrations of methane, water, and carbon dioxide agree well with available results from numerical simulations.

Electrical Current Leakage and Open-Core Threading Dislocations in AlGaN-Based Deep Ultraviolet Light-Emitting Diodes.

DOE PAGES

Moseley, Michael William; Allerman, Andrew A.; Crawford, Mary H.; ...

2014-08-04

Electrical current transport through leakage paths in AlGaN-based deep ultraviolet (DUV) lightemitting diodes (LEDs) and their effect on LED performance are investigated. Open-core threading dislocations, or nanopipes, are found to conduct current through nominally insulating Al0.7Ga0.3N layers and limit the performance of DUV-LEDs. A defect-sensitive phosphoric acid etch reveals these opencore threading dislocations in the form of large, micron-scale hexagonal etch pits visible with optical microscopy, while closed-core screw-, edge-, and mixed-type threading dislocations are represented by smaller and more numerous nanometer-scale pits visible by atomic-force microscopy. The electrical and optical performances of DUV-LEDs fabricated on similar Si-doped Al0.7Ga0.3N templatesmore » are found to have a strong correlation to the density of these nanopipes, despite their small fraction (<0.1% in this study) of the total density of threading dislocations.« less

Simple phenomenological modeling of transition-region capacitance of forward-biased p-n junction diodes and transistor diodes

NASA Technical Reports Server (NTRS)

Lindholm, F. A.

1982-01-01

The derivation of a simple expression for the capacitance C(V) associated with the transition region of a p-n junction under a forward bias is derived by phenomenological reasoning. The treatment of C(V) is based on the conventional Shockley equations, and simpler expressions for C(V) result that are in general accord with the previous analytical and numerical results. C(V) consists of two components resulting from changes in majority carrier concentration and from free hole and electron accumulation in the space-charge region. The space-charge region is conceived as the intrinsic region of an n-i-p structure for a space-charge region markedly wider than the extrinsic Debye lengths at its edges. This region is excited in the sense that the forward bias creates hole and electron densities orders of magnitude larger than those in equilibrium. The recent Shirts-Gordon (1979) modeling of the space-charge region using a dielectric response function is contrasted with the more conventional Schottky-Shockley modeling.

Compact millijoule diode-seeded two-stage fiber master oscillator power amplifier using a multipass and forward pumping scheme.

PubMed

Lai, Po-Yen; Chang, Chun-Lin; Huang, Sheng-Lung; Chen, Shih-Hung

2018-05-01

The multipass scheme for a diode-seeded fiber master oscillator power amplifier with a nanojoule-to-millijoule output energy level at a repetition rate of <100  kHz is numerically analyzed for comparison to an experimental benchmark. For a 6/125 single-mode preamplifier with a small input energy (<1  nJ), there is a significant improvement in the output energy from 0.7% to 80% and 95% of the maximum extractable energy using the double-pass and four-pass schemes, respectively. For a 30/250 large-mode-area power amplifier using the double-pass and forward pumping scheme, the required input energy is decreased from 100 μJ to 18 μJ for millijoule energy extraction with accompanying Stokes waves of less than 10% of the total energy. The system based on the full master oscillator power amplifier configuration with an output energy exceeding millijoule level can be optimally simplified to two stages for commercialization.

Influence of InGaN sub-quantum-well on performance of InAlN/GaN/InAlN resonant tunneling diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Haoran; Yang, Lin'an, E-mail: layang@xidian.edu.cn; Hao, Yue

The resonant tunneling mechanism of the GaN based resonant tunneling diode (RTD) with an InGaN sub-quantum-well has been investigated by means of numerical simulation. At resonant-state, Electrons in the InGaN/InAlN/GaN/InAlN RTD tunnel from the emitter region through the aligned discrete energy levels in the InGaN sub-quantum-well and GaN main-quantum-well into the collector region. The implantation of the InGaN sub-quantum-well alters the dominant transport mechanism, increase the transmission coefficient and give rise to the peak current and peak-to-valley current ratio. We also demonstrate that the most pronounced negative-differential-resistance characteristic can be achieved by choosing appropriately the In composition of In{sub x}Ga{submore » 1−x}N at around x = 0.06.« less

Laser diode side-pumped Nd:YVO4 microchip laser with film-etched microcavity mirrors.

PubMed

Li, Jiyang; Niu, Yanxiong; Chen, Sanbin; Tan, Yidong

2017-10-01

Microchip lasers are applied as the light sources on various occasions with the end-pumping scheme. However, the vibration, the temperature drift, or the mechanical deformation of the pumping light in laser diodes in the end-pumping scheme will lead to instability in the microchip laser output, which causes errors and malfunctioning in the optic systems. In this paper, the side-pumping scheme is applied for improving the disturbance-resisting ability of the microchip laser. The transverse mode and the frequency purity of the laser output are tested. To ensure unicity in the frequency of the laser output, numerical simulations based on Fresnel-Kirchhoff diffraction theory are conducted on the parameters of the microchip laser cavity. Film-etching technique is applied to restrain the area of the film and form the microcavity mirrors. The laser output with microcavity mirrors is ensured to be in single frequency and with good beam quality, which is significant in the applications of microchip lasers as the light sources in optical systems.

High efficiency all-optical plasmonic diode based on a nonlinear side-coupled waveguide-cavity structure with broken symmetry

NASA Astrophysics Data System (ADS)

Liang, Hong-Qin; Liu, Bin; Hu, Jin-Feng; He, Xing-Dao

2018-05-01

An all-optical plasmonic diode, comprising a metal-insulator-metal waveguide coupled with a stub cavity, is proposed based on a nonlinear Fano structure. The key technique used is to break structural spatial symmetry by a simple reflector layer in the waveguide. The spatial asymmetry of the structure gives rise to the nonreciprocity of coupling efficiencies between the Fano cavity and waveguides on both sides of the reflector layer, leading to a nonreciprocal nonlinear response. Transmission properties and dynamic responses are numerically simulated and investigated by the nonlinear finite-difference time-domain method. In the proposed structure, high-efficiency nonreciprocal transmission can be achieved with a low power threshold and an ultrafast response time (subpicosecond level). A high maximum transmittance of 89.3% and an ultra-high transmission contrast ratio of 99.6% can also be obtained. The device can be flexibly adjusted for working wavebands by altering the stub cavity length.

Solution of the hydrodynamic device model using high-order non-oscillatory shock capturing algorithms. [for junction diodes simulation

NASA Technical Reports Server (NTRS)

Fatemi, Emad; Osher, Stanley; Jerome, Joseph

1991-01-01

A micron n+ - n - n+ silicon diode is simulated via the hydrodynamic model for carrier transport. The numerical algorithms employed are for the non-steady case, and a limiting process is used to reach steady state. The simulation employs shock capturing algorithms, and indeed shocks, or very rapid transition regimes, are observed in the transient case for the coupled system, consisting of the potential equation and the conservation equations describing charge, momentum, and energy transfer for the electron carriers. These algorithms, termed essentially nonoscillatory, were successfully applied in other contexts to model the flow in gas dynamics, magnetohydrodynamics, and other physical situations involving the conservation laws in fluid mechanics. The method here is first order in time, but the use of small time steps allows for good accuracy. Runge-Kutta methods allow one to achieve higher accuracy in time if desired. The spatial accuracy is of high order in regions of smoothness.

Fast physical-random number generation using laser diode's frequency noise: influence of frequency discriminator

NASA Astrophysics Data System (ADS)

Matsumoto, Kouhei; Kasuya, Yuki; Yumoto, Mitsuki; Arai, Hideaki; Sato, Takashi; Sakamoto, Shuichi; Ohkawa, Masashi; Ohdaira, Yasuo

2018-02-01

Not so long ago, pseudo random numbers generated by numerical formulae were considered to be adequate for encrypting important data-files, because of the time needed to decode them. With today's ultra high-speed processors, however, this is no longer true. So, in order to thwart ever-more advanced attempts to breach our system's protections, cryptologists have devised a method that is considered to be virtually impossible to decode, and uses what is a limitless number of physical random numbers. This research describes a method, whereby laser diode's frequency noise generate a large quantities of physical random numbers. Using two types of photo detectors (APD and PIN-PD), we tested the abilities of two types of lasers (FP-LD and VCSEL) to generate random numbers. In all instances, an etalon served as frequency discriminator, the examination pass rates were determined using NIST FIPS140-2 test at each bit, and the Random Number Generation (RNG) speed was noted.

Determination of the Maximum Temperature in a Non-Uniform Hot Zone by Line-of-Site Absorption Spectroscopy with a Single Diode Laser.

PubMed

Liger, Vladimir V; Mironenko, Vladimir R; Kuritsyn, Yurii A; Bolshov, Mikhail A

2018-05-17

A new algorithm for the estimation of the maximum temperature in a non-uniform hot zone by a sensor based on absorption spectrometry with a diode laser is developed. The algorithm is based on the fitting of the absorption spectrum with a test molecule in a non-uniform zone by linear combination of two single temperature spectra simulated using spectroscopic databases. The proposed algorithm allows one to better estimate the maximum temperature of a non-uniform zone and can be useful if only the maximum temperature rather than a precise temperature profile is of primary interest. The efficiency and specificity of the algorithm are demonstrated in numerical experiments and experimentally proven using an optical cell with two sections. Temperatures and water vapor concentrations could be independently regulated in both sections. The best fitting was found using a correlation technique. A distributed feedback (DFB) diode laser in the spectral range around 1.343 µm was used in the experiments. Because of the significant differences between the temperature dependences of the experimental and theoretical absorption spectra in the temperature range 300⁻1200 K, a database was constructed using experimentally detected single temperature spectra. Using the developed algorithm the maximum temperature in the two-section cell was estimated with accuracy better than 30 K.

Optical spectroscopy and diode-pumped laser characteristics of codoped Tm-Ho:YLF and Tm-Ho:BaYF: a comparative analysis

NASA Astrophysics Data System (ADS)

Cornacchia, F.; Sani, E.; Toncelli, A.; Tonelli, M.; Marano, M.; Taccheo, S.; Galzerano, G.; Laporta, P.

Single crystals of monoclinic BaY2F8 and tetragonal LiYF4 codoped with the same Tm3+ and Ho3+ concentrations were successfully grown by the Czochralski method. Here we present a comparative analysis of the two hosts including spectroscopic characterization and cw diode-pumped laser experiments in the 2-μm wavelength region at room temperature. The main differences between the two hosts are a lower slope efficiency associated with a much wider tuning range (2005-2094 nm) of BaY2F8 with respect to LiYF4.

In−Vitro and In−Vivo Noise Analysis for Optical Neural Recording

PubMed Central

Foust, Amanda J.; Schei, Jennifer L.; Rojas, Manuel J.; Rector, David M.

2008-01-01

Laser diodes (LD) are commonly used for optical neural recordings in chronically recorded animals and humans, primarily due to their brightness and small size. However, noise introduced by LDs may counteract the benefits of brightness when compared to low−noise light emitting diodes (LEDs). To understand noise sources in optical recordings, we systematically compared instrument and physiological noise profiles in two recording paradigms. A better understanding of noise sources will help improve optical recordings and make them more practical with fewer averages. We stimulated lobster nerves and rat cortex, then compared the root mean square (RMS) noise and signal−to−noise ratios (SNRs) of data obtained with LED, superluminescent diode (SLD) and LD illumination for different numbers of averages. The LED data exhibited significantly higher SNRs in fewer averages than LD data in all recordings. In the absence of tissue, LED noise increased linearly with intensity, while LD noise increased sharply in the transition to lasing and settled to noise levels significantly higher than the LED’s, suggesting that speckle noise contributed to the LD’s higher noise and lower SNRs. Our data recommend low coherence and portable light sources for in−vivo chronic neural recording applications. PMID:19021365

Comparison of Refractive Error Changes in Retinopathy of Prematurity Patients Treated with Diode and Red Lasers.

PubMed

Roohipoor, Ramak; Karkhaneh, Reza; Riazi Esfahani, Mohammad; Alipour, Fateme; Haghighat, Mahtab; Ebrahimiadib, Nazanin; Zarei, Mohammad; Mehrdad, Ramin

2016-01-01

To compare refractive error changes in retinopathy of prematurity (ROP) patients treated with diode and red lasers. A randomized double-masked clinical trial was performed, and infants with threshold or prethreshold type 1 ROP were assigned to red or diode laser groups. Gestational age, birth weight, pretreatment cycloplegic refraction, time of treatment, disease stage, zone and disease severity were recorded. Patients received either red or diode laser treatment and were regularly followed up for retina assessment and refraction. The information at month 12 of corrected age was considered for comparison. One hundred and fifty eyes of 75 infants were enrolled in the study. Seventy-four eyes received diode and 76 red laser therapy. The mean gestational age and birth weight of the infants were 28.6 ± 3.2 weeks and 1,441 ± 491 g, respectively. The mean baseline refractive error was +2.3 ± 1.7 dpt. Posttreatment refraction showed a significant myopic shift (mean 2.6 ± 2.0 dpt) with significant difference between the two groups (p < 0.001). There was a greater myopic shift among children with zone I and diode laser treatment (mean 6.00 dpt) and a lesser shift among children with zone II and red laser treatment (mean 1.12 dpt). The linear regression model, using the generalized estimating equation method, showed that the type of laser used has a significant effect on myopic shift even after adjustment for other variables. Myopic shift in laser-treated ROP patients is related to the type of laser used and the involved zone. Red laser seems to cause less myopic shift than diode laser, and those with zone I involvement have a greater myopic shift than those with ROP in zone II. © 2016 S. Karger AG, Basel.

AlGaInN laser diode technology for defence, security and sensing applications

NASA Astrophysics Data System (ADS)

Najda, Stephen P.; Perlin, Piotr; Suski, Tadek; Marona, Lucja; Boćkowski, Mike; Leszczyński, Mike; Wisniewski, Przemek; Czernecki, Robert; Kucharski, Robert; Targowski, Grzegorz; Watson, Scott; Kelly, Antony E.

2014-10-01

The latest developments in AlGaInN laser diode technology are reviewed for defence, security and sensing applications. The AlGaInN material system allows for laser diodes to be fabricated over a very wide range of wavelengths from u.v., i.e, 380nm, to the visible, i.e., 530nm, by tuning the indium content of the laser GaInN quantum well. Advantages of using Plasma assisted MBE (PAMBE) compared to more conventional MOCVD epitaxy to grow AlGaInN laser structures are highlighted. Ridge waveguide laser diode structures are fabricated to achieve single mode operation with optical powers of <100mW in the 400-420nm wavelength range that are suitable for telecom applications. Visible light communications at high frequency (up to 2.5 Gbit/s) using a directly modulated 422nm Gallium-nitride (GaN) blue laser diode is reported. High power operation of AlGaInN laser diodes is demonstrated with a single chip, AlGaInN laser diode `mini-array' with a common p-contact configuration at powers up to 2.5W cw at 410nm. Low defectivity and highly uniform GaN substrates allow arrays and bars of nitride lasers to be fabricated. GaN laser bars of up to 5mm with 20 emitters, mounted in a CS mount package, give optical powers up to 4W cw at ~410nm with a common contact configuration. An alternative package configuration for AlGaInN laser arrays allows for each individual laser to be individually addressable allowing complex free-space and/or fibre optic system integration within a very small form-factor.or.

Generating a high brightness multi-kilowatt laser by dense spectral combination of VBG stabilized single emitter laser diodes

NASA Astrophysics Data System (ADS)

Fritsche, H.; Koch, Ralf; Krusche, B.; Ferrario, F.; Grohe, Andreas; Pflueger, S.; Gries, W.

2014-05-01

Generating high power laser radiation with diode lasers is commonly realized by geometrical stacking of diode bars, which results in high output power but poor beam parameter product (BPP). The accessible brightness in this approach is limited by the fill factor, both in slow and fast axis. By using a geometry that accesses the BPP of the individual diodes, generating a multi kilowatt diode laser with a BPP comparable to fiber lasers is possible. We will demonstrate such a modular approach for generating multi kilowatt lasers by combining single emitter diode lasers. Single emitter diodes have advantages over bars, mainly a simplified cooling, better reliability and a higher brightness per emitter. Additionally, because single emitters can be arranged in many different geometries, they allow building laser modules where the brightness of the single emitters is preserved. In order to maintain the high brightness of the single emitter we developed a modular laser design which uses single emitters in a staircase arrangement, then coupling two of those bases with polarization combination which is our basic module. Those modules generate up to 160 W with a BPP better than 7.5 mm*mrad. For further power scaling wavelength stabilization is crucial. The wavelength is stabilized with only one Volume Bragg Grating (VBG) in front of a base providing the very same feedback to all of the laser diodes. This results in a bandwidth of < 0.5 nm and a wavelength stability of better than 250 MHz over one hour. Dense spectral combination with dichroic mirrors and narrow channel spacing allows us to combine multiple wavelength channels, resulting in a 2 kW laser module with a BPP better than 7.5 mm*mrad, which can easily coupled into a 100 μm fiber and 0.15 NA.

Combined photoablative and photodynamic diode laser therapy as an adjunct to non-surgical periodontal treatment: a randomized split-mouth clinical trial.

PubMed

Giannelli, Marco; Formigli, Lucia; Lorenzini, Luca; Bani, Daniele

2012-10-01

Comparing the efficacy of photoablative and photodynamic diode laser in adjunct to scaling -root planing (SRP) and SRP alone for the treatment of chronic periodontitis. Twenty-six patients were studied. Maxillary left or right quadrants were randomly assigned to sham-laser treatment + SRP or laser + SRP. This consisted of photoablative intra/extra-pocket de-epithelization with diode laser (λ = 810 nm), followed by single SRP and multiple photodynamic treatments (once weekly, 4-10 applications, mean ± SD: 3.7 ± 2.4) using diode laser (λ = 635 nm) and 0.3% methylene blue as photosensitizer. The patients were monitored at days 0 and 365 by clinical assessment (probing depth, PD; clinical attachment level, CAL; bleeding on probing, BOP) and at days 0, 15, 30, 45, 60, 75, 90, 365 by cytofluorescence analysis of gingival exfoliative samples taken in proximity of the teeth to be treated (polymorphonuclear leukocytes, PMN; red blood cells, RBC; damaged epithelial cells, DEC; bacteria). At day 365, compared with the control quadrants, the laser + SRP therapy yielded a significant (p < 0.001) reduction in PD (-1.9 mm), CAL (-1.7 mm) and BOP (-33.2% bleeding sites), as well as in bacterial contamination - especially spirochetes - and PMN and RBC shedding in the gingival samples (p < 0.001). Diode laser treatment (photoablation followed by multiple photodynamic cycles) adjunctive to conventional SRP improves healing in chronic periodontitis patients. © 2012 John Wiley & Sons A/S.

Schottky barrier parameters and structural properties of rapidly annealed Zr Schottky electrode on p-type GaN

NASA Astrophysics Data System (ADS)

Rajagopal Reddy, V.; Asha, B.; Choi, Chel-Jong

2017-06-01

The Schottky barrier junction parameters and structural properties of Zr/p-GaN Schottky diode are explored at various annealing temperatures. Experimental analysis showed that the barrier height (BH) of the Zr/p-GaN Schottky diode increases with annealing at 400 °C (0.92 eV (I-V)/1.09 eV (C-V)) compared to the as-deposited one (0.83 eV (I-V)/0.93 eV (C-V)). However, the BH decreases after annealing at 500 °C. Also, at different annealing temperatures, the series resistance and BH are assessed by Cheung's functions and their values compared. Further, the interface state density (N SS) of the diode decreases after annealing at 400 °C and then somewhat rises upon annealing at 500 °C. Analysis reveals that the maximum BH is obtained at 400 °C, and thus the optimum annealing temperature is 400 °C for the diode. The XPS and XRD analysis revealed that the increase in BH may be attributed to the creation of Zr-N phases with increasing annealing up to 400 °C. The BH reduces for the diode annealed at 500 °C, which may be due to the formation of Ga-Zr phases at the junction. The AFM measurements reveal that the overall surface roughness of the Zr film is quite smooth during rapid annealing process. Project supported by the R&D Program for Industrial Core Technology (No. 10045216) and the Transfer Machine Specialized Lighting Core Technology Development Professional Manpower Training Project (No. N0001363) Funded by the Ministry of Trade, Industry and Energy (MOTIE), Republic of Korea.

Comparison of symmetric and asymmetric double quantum well extended-cavity diode lasers for broadband passive mode-locking at 780  nm.

PubMed

Christopher, Heike; Kovalchuk, Evgeny V; Wenzel, Hans; Bugge, Frank; Weyers, Markus; Wicht, Andreas; Peters, Achim; Tränkle, Günther

2017-07-01

We present a compact, mode-locked diode laser system designed to emit a frequency comb in the wavelength range around 780 nm. We compare the mode-locking performance of symmetric and asymmetric double quantum well ridge-waveguide diode laser chips in an extended-cavity diode laser configuration. By reverse biasing a short section of the diode laser chip, passive mode-locking at 3.4 GHz is achieved. Employing an asymmetric double quantum well allows for generation of a mode-locked optical spectrum spanning more than 15 nm (full width at -20  dB) while the symmetric double quantum well device only provides a bandwidth of ∼2.7  nm (full width at -20  dB). Analysis of the RF noise characteristics of the pulse repetition rate shows an RF linewidth of about 7 kHz (full width at half-maximum) and of at most 530 Hz (full width at half-maximum) for the asymmetric and symmetric double quantum well devices, respectively. Investigation of the frequency noise power spectral density at the pulse repetition rate shows a white noise floor of approximately 2100  Hz 2 /Hz and of at most 170  Hz 2 /Hz for the diode laser employing the asymmetric and symmetric double quantum well structures, respectively. The pulse width is less than 10 ps for both devices.

High speed, mask-less, laser controlled deposition of microscale tungsten tracks using 405 nm wavelength diode laser

NASA Astrophysics Data System (ADS)

Ten, Jyi Sheuan; Sparkes, Martin; O'Neill, William

2017-02-01

A rapid, mask-less deposition technique for the deposition of conductive tracks to nano- and micro-devices has been developed. The process uses a 405 nm wavelength laser diode for the direct deposition of tungsten tracks on silicon substrates via laser assisted chemical vapour deposition. Unlike lithographic processes this technique is single step and does not require chemical masks that may contaminate the substrate. To demonstrate the process, tungsten was deposited from tungsten hexacarbonyl precursors to produce conductive tracks with widths of 1.7-28 μm and heights of 0.05-35 μm at laser scan speeds up to 40 μm/s. The highest volumetric deposition rate achieved is 1×104 μm3/s, three orders of magnitude higher than that of focused ion beam deposition and on par with a 515 nm wavelength argon ion laser previously reported as the laser source. The microstructure and elemental composition of the deposits are comparable to that of largearea chemical vapour deposition methods using the same chemical precursor. The contact resistance and track resistance of the deposits has been measured using the transfer length method to be 205 μΩ cm. The deposition temperature has been estimated at 334 °C from a laser heat transfer model accounting for temperature dependent optical and physical properties of the substrate. The peak temperatures achieved on silicon and other substrates are higher than the thermal dissociation temperature of numerous precursors, indicating that this technique can also be used to deposit other materials such as gold and platinum on various substrates.

Solution-processed multilayer polymer light-emitting diode without intermixing

NASA Astrophysics Data System (ADS)

Kasparek, C.; Blom, P. W. M.

2017-01-01

The intermixing of two emissive layers in a four-layer solution-processed polymeric light-emitting diode with a hole injection, two emissive layers, and one hole-blocking layer is investigated. The relative emission of both emissive layers is measured and compared to a calculated recombination profile across the device using drift-diffusion simulations. A good agreement between the measured and calculated relative emission was found, supporting that there is no intermixing in the two emissive materials.

Accurate diode behavioral model with reverse recovery

NASA Astrophysics Data System (ADS)

Banáš, Stanislav; Divín, Jan; Dobeš, Josef; Paňko, Václav

2018-01-01

This paper deals with the comprehensive behavioral model of p-n junction diode containing reverse recovery effect, applicable to all standard SPICE simulators supporting Verilog-A language. The model has been successfully used in several production designs, which require its full complexity, robustness and set of tuning parameters comparable with standard compact SPICE diode model. The model is like standard compact model scalable with area and temperature and can be used as a stand-alone diode or as a part of more complex device macro-model, e.g. LDMOS, JFET, bipolar transistor. The paper briefly presents the state of the art followed by the chapter describing the model development and achieved solutions. During precise model verification some of them were found non-robust or poorly converging and replaced by more robust solutions, demonstrated in the paper. The measurement results of different technologies and different devices compared with a simulation using the new behavioral model are presented as the model validation. The comparison of model validation in time and frequency domains demonstrates that the implemented reverse recovery effect with correctly extracted parameters improves the model simulation results not only in switching from ON to OFF state, which is often published, but also its impedance/admittance frequency dependency in GHz range. Finally the model parameter extraction and the comparison with SPICE compact models containing reverse recovery effect is presented.

SU-G-201-17: Verification of Dose Distributions From High-Dose-Rate Brachytherapy Ir-192 Source Using a Multiple-Array-Diode-Detector (MapCheck2)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Harpool, K; De La Fuente Herman, T; Ahmad, S

Purpose: To investigate quantitatively the accuracy of dose distributions for the Ir-192 high-dose-rate (HDR) brachytherapy source calculated by the Brachytherapy-Planning system (BPS) and measured using a multiple-array-diode-detector in a heterogeneous medium. Methods: A two-dimensional diode-array-detector system (MapCheck2) was scanned with a catheter and the CT-images were loaded into the Varian-Brachytherapy-Planning which uses TG-43-formalism for dose calculation. Treatment plans were calculated for different combinations of one dwell-position and varying irradiation times and different-dwell positions and fixed irradiation time with the source placed 12mm from the diode-array plane. The calculated dose distributions were compared to the measured doses with MapCheck2 delivered bymore » an Ir-192-source from a Nucletron-Microselectron-V2-remote-after-loader. The linearity of MapCheck2 was tested for a range of dwell-times (2–600 seconds). The angular effect was tested with 30 seconds irradiation delivered to the central-diode and then moving the source away in increments of 10mm. Results: Large differences were found between calculated and measured dose distributions. These differences are mainly due to absence of heterogeneity in the dose calculation and diode-artifacts in the measurements. The dose differences between measured and calculated due to heterogeneity ranged from 5%–12% depending on the position of the source relative to the diodes in MapCheck2 and different heterogeneities in the beam path. The linearity test of the diode-detector showed 3.98%, 2.61%, and 2.27% over-response at short irradiation times of 2, 5, and 10 seconds, respectively, and within 2% for 20 to 600 seconds (p-value=0.05) which depends strongly on MapCheck2 noise. The angular dependency was more pronounced at acute angles ranging up to 34% at 5.7 degrees. Conclusion: Large deviations between measured and calculated dose distributions for HDR-brachytherapy with Ir-192 may be improved when considering medium heterogeneity and dose-artifact of the diodes. This study demonstrates that multiple-array-diode-detectors provide practical and accurate dosimeter to verify doses delivered from the brachytherapy Ir-192-source.« less

Bright infrared quantum-dot light-emitting diodes through inter-dot spacing control.

PubMed

Sun, Liangfeng; Choi, Joshua J; Stachnik, David; Bartnik, Adam C; Hyun, Byung-Ryool; Malliaras, George G; Hanrath, Tobias; Wise, Frank W

2012-05-06

Infrared light-emitting diodes are currently fabricated from direct-gap semiconductors using epitaxy, which makes them expensive and difficult to integrate with other materials. Light-emitting diodes based on colloidal semiconductor quantum dots, on the other hand, can be solution-processed at low cost, and can be directly integrated with silicon. However, so far, exciton dissociation and recombination have not been well controlled in these devices, and this has limited their performance. Here, by tuning the distance between adjacent PbS quantum dots, we fabricate thin-film quantum-dot light-emitting diodes that operate at infrared wavelengths with radiances (6.4 W sr(-1) m(-2)) eight times higher and external quantum efficiencies (2.0%) two times higher than the highest values previously reported. The distance between adjacent dots is tuned over a range of 1.3 nm by varying the lengths of the linker molecules from three to eight CH(2) groups, which allows us to achieve the optimum balance between charge injection and radiative exciton recombination. The electroluminescent powers of the best devices are comparable to those produced by commercial InGaAsP light-emitting diodes. By varying the size of the quantum dots, we can tune the emission wavelengths between 800 and 1,850 nm.

11-kW direct diode laser system with homogenized 55 × 20 mm2 Top-Hat intensity distribution

NASA Astrophysics Data System (ADS)

Köhler, Bernd; Noeske, Axel; Kindervater, Tobias; Wessollek, Armin; Brand, Thomas; Biesenbach, Jens

2007-02-01

In comparison with other laser systems diode lasers are characterized by a unique overall efficiency, a small footprint and high reliability. However, one major drawback of direct diode laser systems is the inhomogeneous intensity distribution in the far field. Furthermore the output power of current commercially available systems is limited to about 6 kW. We report on a diode laser system with 11 kW output power at a single wavelength of 940 nm aiming for customer specific large area treatment. To the best of our knowledge this is the highest output power reported so far for a direct diode laser system. In addition to the high output power the intensity distribution of the laser beam is homogenized in both axes leading to a 55 x 20 mm2 Top-Hat intensity profile at a working distance of 400 mm. Homogeneity of the intensity distribution is better than 90%. The intensity in the focal plane is 1 kW/cm2. We will present a detailed characterization of the laser system, including measurements of power, power stability and intensity distribution of the homogenized laser beam. In addition we will compare the experimental data with the results of non-sequential raytracing simulations.

Subsurface optical stimulation of rat prostate cavernous nerves using a continuous wave, single mode, 1490 nm diode laser

NASA Astrophysics Data System (ADS)

Tozburun, Serhat; Stahl, Charlotte S. D.; Hutchens, Thomas C.; Lagoda, Gwen A.; Burnett, Arthur L.; Fried, Nathaniel M.

2013-03-01

Successful identification of the cavernous nerves (CN's) during radical prostatectomy requires detection of the CN's through a thin layer of overlying fascia. This study explores the 1490 nm infrared (IR) diode laser wavelength for rapid and deep subsurface CN stimulation in a rat model, in vivo. A 150-mW, 1490-nm diode laser providing an optical penetration depth of 520 μm was used to stimulate the CN's in 8 rats through a single mode fiber optic probe with 1-mm-diameter spot and 15 s irradiation time. Successful ONS was judged by an intracavernous pressure response (ICP) in the rat penis. Subsurface ONS at 1490 nm was also compared with previous studies using 1455 and 1550 nm IR diode laser wavelengths. ONS was observed through fascia layers up to 380 μm thick using an incident laser power of 50 mW. ICP response times as short as 4.6 +/- 0.2 s were recorded using higher laser powers bust still below the nerve damage threshold. The 1490-nm diode laser represents a compact, low cost, high power, and high quality infrared light source for use in ONS. This wavelength provides deeper optical penetration than 1455 nm and more rapid and efficient nerve stimulation than 1550 nm.

Numerical and experimental investigation of GaN-based flip-chip light-emitting diodes with highly reflective Ag/TiW and ITO/DBR Ohmic contacts.

PubMed

Zhou, Shengjun; Liu, Xingtong; Gao, Yilin; Liu, Yingce; Liu, Mengling; Liu, Zongyuan; Gui, Chengqun; Liu, Sheng

2017-10-30

We demonstrate two types of GaN-based flip-chip light-emitting diodes (FCLEDs) with highly reflective Ag/TiW and indium-tin oxide (ITO)/distributed Bragg reflector (DBR) p-type Ohmic contacts. We show that a direct Ohmic contact to p-GaN layer using pure Ag is obtained when annealed at 600°C in N 2 ambient. A TiW diffusion barrier layer covered onto Ag is used to suppress the agglomeration of Ag and thus maintain high reflectance of Ag during high temperature annealing process. We develop a strip-shaped SiO 2 current blocking layer beneath the ITO/DBR to alleviate current crowding occurring in FCLED with ITO/DBR. Owing to negligibly small spreading resistance of Ag, however, our combined numerical and experimental results show that the FCLED with Ag/TiW has a more favorable current spreading uniformity in comparison to the FCLED with ITO/DBR. As a result, the light output power of FCLED with Ag/TiW is 7.5% higher than that of FCLED with ITO/DBR at 350 mA. The maximum output power of the FCLED with Ag/TiW obtained at 305.6 A/cm 2 is 29.3% larger than that of the FCLED with ITO/DBR obtained at 278.9 A/cm 2 . The improvement appears to be due to the enhanced current spreading and higher optical reflectance provided by the Ag/TiW.

The impact of water vapor diodes on soil water redistribution

NASA Astrophysics Data System (ADS)

Wang, Zhuangji; Ankeny, Mark; Horton, Robert

2017-09-01

Diurnal soil temperature fluctuations are the prime cause for subsurface water vapor fluxes. In arid and semi-arid areas, water vapor flux is the dominant means of soil water redistribution. The directions of water vapor flux shift from upward to downward diurnally following the variations of the soil thermal gradient. A water vapor diode (WVD), acting as a check valve, allows water vapor flux in one direction but heat flux in both directions. By installing a subsurface WVD, it is possible to impose direction-controlled vapor fluxes, and WVDs can be used to accumulate or remove water in particular soil layers. The egg carton shape, with pores situated at selected peaks and valleys, is a possible design for WVDs. In this study, we provide the concept and the properties of the ideal WVDs, and we discuss four WVD configurations to control soil water redistribution. Numerical simulation is used to evaluate the impacts of the ideal WVDs. The results indicate that WVDs can increase local water contents by at least 0.1 m3m-3 in a silt loam. For a fixed initial water and thermal condition, the effect of WVDs is related to the deployment depth and distance between two consecutive WVDs. WVDs can be used to manipulate soil water redistribution and accumulate water at specific depths to support plant growth. The numerical simulation results indicate the potential effectiveness of the ideal WVDs, and field tests should be performed to determine their function under specific soil conditions.

Characterization of Si p-i-n diode for scanning transmission ion microanalysis of biological samples

NASA Astrophysics Data System (ADS)

Devès, G.; Matsuyama, S.; Barbotteau, Y.; Ishii, K.; Ortega, R.

2006-05-01

The performance of a silicon p-i-n diode (Hamamatsu S1223-01) for the detection of charged particles was investigated and compared with the response of a standard passivated implanted planar silicon (PIPS) detector. The photodiode was characterized by ion beam induced charge collection with a micrometer spatial resolution using proton and alpha particle beams in the 1-3MeV energy range. Results indicate that homogeneity, energy resolution, and reproducibility of detection of charged particles enable the use of the low cost silicon p-i-n device as a replacement of conventional PIPS detector during scanning transmission ion microanalysis experiments. The Si p-i-n diode detection setup was successfully applied to scanning transmission ion microscopy determination of subcellular compartments on human cancer cultured cells.

Optimized Biasing of Pump Laser Diodes in a Highly Reliable Metrology Source for Long-Duration Space Missions

NASA Technical Reports Server (NTRS)

Poberezhskiy, Ilya; Chang, Daniel; Erlig, Hernan

2011-01-01

Non Planar Ring Oscillator (NPRO) lasers are highly attractive for metrology applications. NPRO reliability for prolonged space missions is limited by reliability of 808 nm pump diodes. Combined laser farm aging parameter allows comparing different bias approaches. Monte-Carlo software developed to calculate the reliability of laser pump architecture, perform parameter sensitivity studies To meet stringent Space Interferometry Mission (SIM) Lite lifetime reliability / output power requirements, we developed a single-mode Laser Pump Module architecture that: (1) provides 2 W of power at 808 nm with >99.7% reliability for 5.5 years (2) consists of 37 de-rated diode lasers operating at -5C, with outputs combined in a very low loss 37x1 all-fiber coupler

Coupled particle-in-cell and Monte Carlo transport modeling of intense radiographic sources

NASA Astrophysics Data System (ADS)

Rose, D. V.; Welch, D. R.; Oliver, B. V.; Clark, R. E.; Johnson, D. L.; Maenchen, J. E.; Menge, P. R.; Olson, C. L.; Rovang, D. C.

2002-03-01

Dose-rate calculations for intense electron-beam diodes using particle-in-cell (PIC) simulations along with Monte Carlo electron/photon transport calculations are presented. The electromagnetic PIC simulations are used to model the dynamic operation of the rod-pinch and immersed-B diodes. These simulations include algorithms for tracking electron scattering and energy loss in dense materials. The positions and momenta of photons created in these materials are recorded and separate Monte Carlo calculations are used to transport the photons to determine the dose in far-field detectors. These combined calculations are used to determine radiographer equations (dose scaling as a function of diode current and voltage) that are compared directly with measured dose rates obtained on the SABRE generator at Sandia National Laboratories.

Theoretical and experimental aspects of laser cutting with a direct diode laser

NASA Astrophysics Data System (ADS)

Costa Rodrigues, G.; Pencinovsky, J.; Cuypers, M.; Duflou, J. R.

2014-10-01

Recent developments in beam coupling techniques have made it possible to scale up the power of diode lasers with a laser beam quality suitable for laser cutting of metal sheets. In this paper a prototype of a Direct Diode Laser (DDL) source (BPP of 22 mm-mrad) is analyzed in terms of efficiency and cut performance and compared with two established technologies, CO2 and fiber lasers. An analytical model based on absorption calculations is used to predict the performance of the studied laser source with a good agreement with experimental results. Furthermore results of fusion cutting of stainless steel and aluminium alloys as well as oxygen cutting of structural steel are presented, demonstrating that industrial relevant cutting speeds with high cutting quality can now be achieved with DDL.

Improvement of electroluminescence performance by integration of ZnO nanowires and single-crystalline films on ZnO/GaN heterojunction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shi, Zhifeng; Zhang, Yuantao, E-mail: zhangyt@jlu.edu.cn; Cui, Xijun

2014-03-31

Heterojunction light-emitting diodes based on n-ZnO nanowires/ZnO single-crystalline films/p-GaN structure have been demonstrated for an improved electroluminescence performance. A highly efficient ultraviolet emission was observed under forward bias. Compared with conventional n-ZnO/p-GaN structure, high internal quantum efficiency and light extraction efficiency were simultaneously considered in the proposed diode. In addition, the diode can work continuously for ∼10 h with only a slight degradation in harsh environments, indicating its good reliability and application prospect in the future. This route opens possibilities for the development of advanced nanoscale devices in which the advantages of ZnO single-crystalline films and nanostructures can be integrated together.

Two-step tomographic reconstructions of temperature and species concentration in a flame based on laser absorption measurements with a rotation platform

NASA Astrophysics Data System (ADS)

Xia, Huihui; Kan, Ruifeng; Xu, Zhenyu; He, Yabai; Liu, Jianguo; Chen, Bing; Yang, Chenguang; Yao, Lu; Wei, Min; Zhang, Guangle

2017-03-01

We present a system for accurate tomographic reconstruction of the combustion temperature and H2O vapor concentration of a flame based on laser absorption measurements, in combination with an innovative two-step algebraic reconstruction technique. A total of 11 collimated laser beams generated from outputs of fiber-coupled diode lasers formed a two-dimensional 5 × 6 orthogonal beam grids and measured at two H2O absorption transitions (7154.354/7154.353 cm-1 and 7467.769 cm-1). The measurement system was designed on a rotation platform to achieve a two-folder improvement in spatial resolution. Numerical simulation showed that the proposed two-step algebraic reconstruction technique for temperature and concentration, respectively, greatly improved the reconstruction accuracy of species concentration when compared with a traditional calculation. Experimental results demonstrated the good performances of the measurement system and the two-step reconstruction technique for applications such as flame monitoring and combustion diagnosis.

A comprehensive metabolite profiling of Isatis tinctoria leaf extracts.

PubMed

Mohn, Tobias; Plitzko, Inken; Hamburger, Matthias

2009-05-01

A broad-based characterisation of a pharmacologically active dichloromethane extract from Isatis tinctoria leaves was carried out. For a comprehensive picture we also included the polar constituents of I. tinctoria (MeOH extract) and for comparative purposes, the taxonomically closely related plant I. indigotica. Diode array detector, evaporative light scattering detector, atmospheric pressure chemical ionisation and electrospray ionisation mass spectrometry, and electrospray ionisation time-of-flight mass spectrometry detectors were used in parallel to ensure a wide coverage of secondary metabolites with highly diverging analytical properties. Off-line microprobe nuclear magnetic resonance spectroscopy after peak purification by semi-preparative high-pressure liquid chromatography served for structure elucidation of some minor constituents. More than 65 compounds belonging to various structural classes such as alkaloids, flavonoids, fatty acids, porphyrins, lignans, carotenoids, glucosinolates and cyclohexenones were unambiguously identified, and tentative structures were proposed for additional compounds. Numerous compounds were identified for the first time in the genus Isatis, and an indolic alkaloid was discovered.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhao, Yukun; Solid-State Lighting Engineering Research Center, Xi'an Jiaotong University, Xi'an, Shaanxi 710049; Department of Electrical Engineering and Electronics, University of Liverpool, Liverpool L69 3GJ

Size-tunable bimetallic bowtie nanoantennas have been utilized to suppress the efficiency roll-off characteristics in organic light-emitting diodes (OLEDs) using both the numerical and experimental approaches. The resonant range can be widened by the strong dual-atomic couplings in bimetallic bowtie nanoantennas. Compared with the green OLED with conventional bowtie nanoantennas at a high current density of 800 mA/cm{sup 2}, the measured efficiency roll-off ratio of the OLED with size-modulated bowtie nanoantennas is decreased from 53.2% to 41.8%, and the measured current efficiency is enhanced by 29.9%. When the size-modulated bowtie nanoantennas are utilized in blue phosphorescent OLEDs, the experimental roll-off ratio ismore » suppressed from 43.6% to 25.9% at 250 mA/cm{sup 2}, and the measured current efficiency is also enhanced significantly. It is proposed that the efficiency roll-off suppression is mainly related to the enhanced localized surface plasmon effect, which leads to a shorter radiative lifetime.« less

Large Work Function Modulation of Monolayer MoS2 by Ambient Gases.

PubMed

Lee, Si Young; Kim, Un Jeong; Chung, JaeGwan; Nam, Honggi; Jeong, Hye Yun; Han, Gang Hee; Kim, Hyun; Oh, Hye Min; Lee, Hyangsook; Kim, Hyochul; Roh, Young-Geun; Kim, Jineun; Hwang, Sung Woo; Park, Yeonsang; Lee, Young Hee

2016-06-28

Although two-dimensional monolayer transition-metal dichalcogenides reveal numerous unique features that are inaccessible in bulk materials, their intrinsic properties are often obscured by environmental effects. Among them, work function, which is the energy required to extract an electron from a material to vacuum, is one critical parameter in electronic/optoelectronic devices. Here, we report a large work function modulation in MoS2 via ambient gases. The work function was measured by an in situ Kelvin probe technique and further confirmed by ultraviolet photoemission spectroscopy and theoretical calculations. A measured work function of 4.04 eV in vacuum was converted to 4.47 eV with O2 exposure, which is comparable with a large variation in graphene. The homojunction diode by partially passivating a transistor reveals an ideal junction with an ideality factor of almost one and perfect electrical reversibility. The estimated depletion width obtained from photocurrent mapping was ∼200 nm, which is much narrower than bulk semiconductors.

Dynamics of a high-current relativistic electron beam

DOE Office of Scientific and Technical Information (OSTI.GOV)

Strelkov, P. S., E-mail: strelkov@fpl.gpi.ru; Tarakanov, V. P., E-mail: karat@gmail.ru; Ivanov, I. E., E-mail: iei@fpl.gpi.ru

2015-06-15

The dynamics of a high-current relativistic electron beam is studied experimentally and by numerical simulation. The beam is formed in a magnetically insulated diode with a transverse-blade explosive-emission cathode. It is found experimentally that the radius of a 500-keV beam with a current of 2 kA and duration of 500 ns decreases with time during the beam current pulse. The same effect was observed in numerical simulations. This effect is explained by a change in the shape of the cathode plasma during the current pulse, which, according to calculations, leads to a change in the beam parameters, such as themore » electron pitch angle and the spread over the longitudinal electron momentum. These parameters are hard to measure experimentally; however, the time evolution of the radial profile of the beam current density, which can be measured reliably, coincides with the simulation results. This allows one to expect that the behavior of the other beam parameters also agrees with numerical simulations.« less

Efficient solution of the Wigner-Liouville equation using a spectral decomposition of the force field

NASA Astrophysics Data System (ADS)

Van de Put, Maarten L.; Sorée, Bart; Magnus, Wim

2017-12-01

The Wigner-Liouville equation is reformulated using a spectral decomposition of the classical force field instead of the potential energy. The latter is shown to simplify the Wigner-Liouville kernel both conceptually and numerically as the spectral force Wigner-Liouville equation avoids the numerical evaluation of the highly oscillatory Wigner kernel which is nonlocal in both position and momentum. The quantum mechanical evolution is instead governed by a term local in space and non-local in momentum, where the non-locality in momentum has only a limited range. An interpretation of the time evolution in terms of two processes is presented; a classical evolution under the influence of the averaged driving field, and a probability-preserving quantum-mechanical generation and annihilation term. Using the inherent stability and reduced complexity, a direct deterministic numerical implementation using Chebyshev and Fourier pseudo-spectral methods is detailed. For the purpose of illustration, we present results for the time-evolution of a one-dimensional resonant tunneling diode driven out of equilibrium.

Numerical study of the generation of runaway electrons in a gas diode with a hot channel

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lisenkov, V. V., E-mail: lisenkov@iep.uran.ru; Ural Federal University, 19 Mira St., Ekaterinburg 620002; Shklyaev, V. A., E-mail: shklyaev@to.hcei.tsc.ru

2015-11-15

A new method for increasing the efficiency of runaway electron beam generation in atmospheric pressure gas media has been suggested and theoretically proved. The method consists of creating a hot region (e.g., a spark channel or a laser plume) with a decreased numerical density of gas molecules (N) near the cathode. In this method, the ratio E/N (E—electric field strength) is increased by decreasing N instead of increasing E, as has been done in the past. The numerical model that is used allows the simultaneous calculation of the formation of a subnanosecond gas discharge and the generation of runaway electronsmore » in gas media. The calculations have demonstrated the possibility of obtaining current pulses of runaway electrons with amplitudes of hundred of amperes and durations of more than 100 ps. The influence of the hot channel geometry on the parameters of the generated beam has been investigated.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chang, Y. L., E-mail: yilu.chang@mail.utoronto.ca; Gong, S., E-mail: sgong@chem.utoronto.ca; White, R.

We have demonstrated high-efficiency greenish-blue phosphorescent organic light-emitting diodes (PHOLEDs) based on a dimesitylboryl-functionalized C^N chelate Pt(II) phosphor, Pt(m-Bptrz)(t-Bu-pytrz-Me). Using a high triplet energy platform and optimized double emissive zone device architecture results in greenish-blue PHOLEDs that exhibit an external quantum efficiency of 24.0% and a power efficiency of 55.8 lm/W. This record high performance is comparable with that of the state-of-the-art Ir-based sky-blue organic light-emitting diodes.

Improved diode performance of Ag nanoparticle dispersed Er doped In2O3 film

NASA Astrophysics Data System (ADS)

Ghosh, Anupam; Dwivedi, Shyam Murli Manohar Dhar; Chakrabartty, Shubhro; Mondal, Aniruddha

2018-04-01

Ag nanoparticle(NP) dispersedEr doped In2O3 film was prepared by sol-gel method followed by thermal evaporation cum glancing angle deposition technique. The Schottky contact based devicecontaining Ag NPs shows ideality factor of ˜180 at 10 K and ˜5 at 300 K, which is lesser as compared to the device that does not contain Ag NPs. The lower ideality factor value all over the temperature range makes the diode more reliable.

Investigation of diode-pumped 2.8- mu m laser performance in Er:BaY2F8

NASA Astrophysics Data System (ADS)

Pollnau, M.; Lüthy, W.; Weber, H. P.; Jensen, T.; Huber, G.; Cassanho, A.; Jenssen, H. P.; McFarlane, R. A.

1996-01-01

Laser operation at 2.8 mu m in BaY2F 8 with erbium concentrations of 7.5% and 20% is investigated under laser-diode pumping at 967 nm. Output powers as high as 250 mW and slope efficiencies as high as 24% are obtained. Results are comparable with those of Er3+ : LiYF4 under the same pump conditions. Slope efficiencies above 30% are predicted for optimized erbium concentrations.

Semiconductor-Insulator-Semiconductor Diode Consisting of Monolayer MoS2, h-BN, and GaN Heterostructure.

PubMed

Jeong, Hyun; Bang, Seungho; Oh, Hye Min; Jeong, Hyeon Jun; An, Sung-Jin; Han, Gang Hee; Kim, Hyun; Kim, Ki Kang; Park, Jin Cheol; Lee, Young Hee; Lerondel, Gilles; Jeong, Mun Seok

2015-10-27

We propose a semiconductor-insulator-semiconductor (SIS) heterojunction diode consisting of monolayer (1-L) MoS2, hexagonal boron nitride (h-BN), and epitaxial p-GaN that can be applied to high-performance nanoscale optoelectronics. The layered materials of 1-L MoS2 and h-BN, grown by chemical vapor deposition, were vertically stacked by a wet-transfer method on a p-GaN layer. The final structure was verified by confocal photoluminescence and Raman spectroscopy. Current-voltage (I-V) measurements were conducted to compare the device performance with that of a more classical p-n structure. In both structures (the p-n and SIS heterojunction diode), clear current-rectifying characteristics were observed. In particular, a current and threshold voltage were obtained for the SIS structure that was higher compared to that of the p-n structure. This indicated that tunneling is the predominant carrier transport mechanism. In addition, the photoresponse of the SIS structure induced by the illumination of visible light was observed by photocurrent measurements.

Comparative study of blue laser diode driven cerium-doped single crystal phosphors in application of high-power lighting and display technologies

NASA Astrophysics Data System (ADS)

Balci, Mustafa H.; Chen, Fan; Cunbul, A. Burak; Svensen, Øyvind; Akram, M. Nadeem; Chen, Xuyuan

2018-02-01

Cerium-doped single crystals (Ce:LuAG, Ce:YAG, Ce:GAGG, Ce:GdYAG) have been investigated as stationary phosphor candidates for blue laser driven solid-state lighting without heat sink. The luminous properties of the single crystals are superior compared to the commercial ceramic powder phosphor wheels (Ce3+: Y3Al5O12). The high-power blue laser diode driven temperature increase of the crystals versus quantum efficiency is experimentally measured and discussed. We have carried out realistic measurements at high excitation power levels and at high temperatures. Limitation of phosphors as stationary sources is determined for commercial usage. The measurements were done without any heat sink to see the relative comparison of SCPs in the worst-case scenarios. The results indicate that Gd and Ga addition decreases the luminescence quenching temperature. Based on their superior properties, these single crystals can serve as potential phosphor candidates for high-power blue diode laser driven picture projectors for the green and red channels.

Comparative and quantitative analysis of white light-emitting diodes and other lamps used for home illumination

NASA Astrophysics Data System (ADS)

Rubinger, Rero Marques; da Silva, Edna Raimunda; Pinto, Daniel Zaroni; Rubinger, Carla Patrícia Lacerda; Oliveira, Adhimar Flávio; da Costa Bortoni, Edson

2015-01-01

We compared the photometric and radiometric quantities in the visible, ultraviolet, and infrared spectra of white light-emitting diodes (LEDs), incandescent light bulbs and a compact fluorescent lamp used for home illumination. The color-rendering index and efficiency-related quantities were also used as auxiliary tools in this comparison. LEDs have a better performance in all aspects except for the color-rendering index, which is better with an incandescent light bulb. Compact fluorescent lamps presented results that, to our knowledge, do not justify their substitution for the incandescent light bulb. The main contribution of this work is an approach based on fundamental quantities to evaluate LEDs and other light sources.

Microcavity organic light-emitting diodes for strongly directed pure red, green, and blue emissions

NASA Astrophysics Data System (ADS)

Tokito, Shizuo; Tsutsui, Tetsuo; Taga, Yasunori

1999-09-01

In this article we demonstrate strongly directed pure red, green, and blue emissions in the organic light-emitting diodes (OLEDs) with a planar microcavity defined by a pair of dielectric mirror and a metal mirror. By careful control of the cavity mode and the position of the resonance wavelength, the strong directionality in the forward direction as well as the spectral narrowing and the intensity enhancement are realized in the microcavity OLEDs. The intensity enhancements at the resonance wavelength are 1.5-5 compared to the noncavity OLEDs, and the chromaticity coordinates of the emission colors are the ideal primary colors. The experimental results are compared to theoretically calculated ones.

Low Profile Tunable Dipole Antennas Using BST Varactors for Biomedical Applications

NASA Technical Reports Server (NTRS)

Cure, David; Weller, Thomas; Price, Tony; Miranda, Felix A.

2013-01-01

In this presentation a 2.4 GHz low profile (lambda45) tunable dipole antenna is evaluated in the presence of a human core model (HCM) body phantom. The antenna uses a frequency selective surface (FSS) with interdigital barium strontium titanate (BST) varactor-tuned unit cells and its performance is compared to a similar low profile antenna that uses an FSS with semiconductor varactor diodes. The measured data of the antenna demonstrate tunability from 2.2 GHz to 2.55 GHz in free space and impedance match improvement in the presence of a HCM at different distances. This antenna has smaller size, lower cost and less weight compared to the semiconductor varactor diode counterpart.

Low Profile Tunable Dipole Antenna Using BST Varactors for Biomedical Applications

NASA Technical Reports Server (NTRS)

Cure, David; Weller, Thomas M.; Miranda, Felix A.; Price, Tony

2013-01-01

In this paper a 2.4 GHz low profile (lambda/47) tunable dipole antenna is evaluated in the presence of a human core model (HCM) body phantom. The antenna uses a frequency selective surface (FSS) with interdigital barium strontium titanate (BST) varactor-tuned unit cells and its performance is compared to a similar low profile antenna that uses an FSS with semiconductor varactor diodes. The measured data of the antenna demonstrate tunability from 2.2 GHz to 2.55 GHz in free space and impedance match improvement in the presence of a HCM at different distances. This antenna has smaller size, lower cost and less weight compared to the semiconductor varactor diode counterpart.

Development of a silicon diode detector for skin dosimetry in radiotherapy.

PubMed

Vicoroski, Nikolina; Espinoza, Anthony; Duncan, Mitchell; Oborn, Bradley M; Carolan, Martin; Metcalfe, Peter; Menichelli, David; Perevertaylo, Vladimir L; Lerch, Michael L F; Rosenfeld, Anatoly B; Petasecca, Marco

2017-10-01

The aim of in vivo skin dosimetry was to measure the absorbed dose to the skin during radiotherapy, when treatment planning calculations cannot be relied on. It is of particularly importance in hypo-fractionated stereotactic modalities, where excessive dose can lead to severe skin toxicity. Currently, commercial diodes for such applications are with water equivalent depths ranging from 0.5 to 0.8 mm. In this study, we investigate a new detector for skin dosimetry based on a silicon epitaxial diode, referred to as the skin diode. The skin diode is manufactured on a thin epitaxial layer and packaged using the "drop-in" technology. It was characterized in terms of percentage depth dose, dose linearity, and dose rate dependence, and benchmarked against the Attix ionization chamber. The response of the skin diode in the build-up region of the percentage depth dose (PDD) curve of a 6 MV clinical photon beam was investigated. Geant4 radiation transport simulations were used to model the PDD in order to estimate the water equivalent measurement depth (WED) of the skin diode. Measured output factors using the skin diode were compared with the MOSkin detector and EBT3 film at 10 cm depth and at surface at isocenter of a water equivalent phantom. The intrinsic angular response of the skin diode was also quantified in charge particle equilibrium conditions (CPE) and at the surface of a solid water phantom. Finally, the radiation hardness of the skin diode up to an accumulated dose of 80 kGy using photons from a Co-60 gamma source was evaluated. The PDD curve measured with the skin diode was within 0.5% agreement of the equivalent Geant4 simulated curve. When placed at the phantom surface, the WED of the skin diode was estimated to be 0.075 ± 0.005 mm from Geant4 simulations and was confirmed using the response of a corrected Attix ionization chamber placed at water equivalent depth of 0.075 mm, with the measurement agreement to within 0.3%. The output factor measurements at 10 cm depth were within 2% of those measured with film and the MOSkin detector down to a field size of 2 × 2 cm 2 . The dose-response for all detector samples was linear and with a repeatability within 0.2%. The skin diode intrinsic angular response showed a maximum deviation of 8% at 90 degrees and from 0 to 60 degree is less than 5%. The radiation sensitivity reduced by 25% after an accumulated dose of 20 kGy but after was found to stabilize. At 60 kGy total accumulated dose the response was within 2% of that measured at 20 kGy total accumulated dose. This work characterizes an innovative detector for in vivo and real-time skin dose measurements that is based on an epitaxial silicon diode combined with the Centre for Medical Radiation Physics (CMRP) "drop-in" packaging technology. The skin diode proved to have a water equivalent depth of measurement of 0.075 ± 0.005 mm and the ability to measure doses accurately relative to reference detectors. © 2017 American Association of Physicists in Medicine.

Tunable diode lasers application for fully automated absolute measurements of CO and CO2 concentrations in human breath

NASA Astrophysics Data System (ADS)

Moskalenko, Konstantin L.; Sobolev, Nikolai V.; Adamovskay, Inna A.; Stepanov, Eugene V.; Nadezhdinskii, Alexander I.; McKenna-Lawlor, Susan

1994-01-01

Measurements of carbon monoxide and carbon dioxide concentrations by registration of high resolution absorption spectra are described. A fully automated diode laser system developed to simultaneously measure CO and CO2, with sensitivity for CO up to 50 ppb and CO2 up to 0.1 vol%, is described. Calculation of CO and CO2 concentrations was carried out on the base of a priori date on strength and broadening coefficients of detected absorption lines. Test procedures of such diode laser systems are described. Possible reasons affected on accuracy and reliability of obtained data (e.g., the value of diode lasers spontaneous radiation, the stability of CO content in a cell, etc.) for absolute and relative calibration procedure are discussed. The physiological level of CO concentration in the breath of non smokers and smokers under different ambient conditions of CO concentrations in the atmosphere (in Moscow and in Maynooth) are compared. Recent results on statistical studies of the behavior of CO concentrations as a function of breath holding time are represented.

13CO2/12CO2 ratio analysis in exhaled air by lead-salt tunable diode lasers for noninvasive diagnostics in gastroenterology

NASA Astrophysics Data System (ADS)

Stepanov, Eugene V.; Zyrianov, Pavel V.; Miliaev, Valerii A.; Selivanov, Yurii G.; Chizhevskii, Eugene G.; Os'kina, Svetlana; Ivashkin, Vladimir T.; Nikitina, Elena I.

1999-07-01

An analyzer of 13CO2/12CO2 ratio in exhaled air based on lead-salt tunable diode lasers is presented. High accuracy of the carbon isotope ratio detection in exhaled carbon dioxide was achieved with help of very simple optical schematics. It was based on the use of MBE laser diodes operating in pulse mode and on recording the resonance CO2 absorption at 4.2 micrometers . Special fast acquisition electronics and software were applied for spectral data collection and processing. Developed laser system was tested in a clinical train aimed to assessment eradication efficiency in therapy of gastritis associated with Helicobacter pylori infection. Data on the 13C-urea breath test used for P.pylori detection and obtained with tunable diode lasers in the course of the trail was compared with the results of Mass-Spectroscopy analysis and histology observations. The analyzer can be used also for 13CO2/12CO2 ratio detection in exhalation to perform gastroenterology breath test based on using other compounds labeled with stable isotopes.

P-n junction diodes with polarization induced p-type graded InxGa1-xN layer

NASA Astrophysics Data System (ADS)

Enatsu, Yuuki; Gupta, Chirag; Keller, Stacia; Nakamura, Shuji; Mishra, Umesh K.

2017-10-01

In this study, p-n junction diodes with polarization induced p-type layer are demonstrated on Ga polar (0001) bulk GaN substrates. A quasi-p-type region is obtained by linearly grading the indium composition in un-doped InxGa1-xN layers from 0% to 5%, taking advantage of the piezoelectric and spontaneous polarization fields which exist in group III-nitride heterostructures grown in the typical (0001) or c-direction. The un-doped graded InxGa1-xN layers needed to be capped with a thin Mg-doped InxGa1-xN layer to make good ohmic contacts and to reduce the on-resistance of the p-n diodes. The Pol-p-n junction diodes exhibited similar characteristics compared to reference samples with traditional p-GaN:Mg layers. A rise in breakdown voltage from 30 to 110 V was observed when the thickness of the graded InGaN layer was increased from 100 to 600 nm at the same grade composition.

Increasing Electrochemiluminescence Intensity of a Wireless Electrode Array Chip by Thousands of Times Using a Diode for Sensitive Visual Detection by a Digital Camera.

PubMed

Qi, Liming; Xia, Yong; Qi, Wenjing; Gao, Wenyue; Wu, Fengxia; Xu, Guobao

2016-01-19

Both a wireless electrochemiluminescence (ECL) electrode microarray chip and the dramatic increase in ECL by embedding a diode in an electromagnetic receiver coil have been first reported. The newly designed device consists of a chip and a transmitter. The chip has an electromagnetic receiver coil, a mini-diode, and a gold electrode array. The mini-diode can rectify alternating current into direct current and thus enhance ECL intensities by 18 thousand times, enabling a sensitive visual detection using common cameras or smart phones as low cost detectors. The detection limit of hydrogen peroxide using a digital camera is comparable to that using photomultiplier tube (PMT)-based detectors. Coupled with a PMT-based detector, the device can detect luminol with higher sensitivity with linear ranges from 10 nM to 1 mM. Because of the advantages including high sensitivity, high throughput, low cost, high portability, and simplicity, it is promising in point of care testing, drug screening, and high throughput analysis.

Treatment of inflammatory facial acne vulgaris in Chinese patients with the 1450-nm diode laser: a pilot study

NASA Astrophysics Data System (ADS)

Liu, Huaxu; Dang, Yongyan; Wang, Zhan; Ma, Li; Ren, Qiushi

2007-02-01

The 1450-nm diode laser has been found to be effective for the treatment of inflammatory acne in USA, Europe and Japan. However, there is no report on its efficacy in Chinese acne vulgaris patients. We conduct this pilot study to evaluate the efficacy and safety of the 1450-nm diode laser in the treatment of inflammatory facial acne vulgaris in Chinese patients. Nineteen patients with inflammatory facial acne were treated with the 1450-nm diode laser at 4- to 6-week intervals. Clinical photographs and lesion counts were obtained at baseline and after each treatment. Subjective evaluation of response to treatment and pain was assessed using a questionnaire. In our study, clinical improvement was seen in all patients and was generally dramatic. Lesion counts decreased 34% after one treatment (p<0.01), 56% after two treatments (p<0.01), and 81% after three treatments (p<0.01). However, the treatment-related pain was comparatively hard to be tolerated in Chinese patitents, and the other main adverse effect was the hyper-pigmentation after treatments (36.84%, 7/19).

[Photodynamic therapy of dysplasias and early carcinomas in Barrett esophagus with a diode laser system--a pilot study].

PubMed

Zöpf, T; Rosenbaum, A; Apel, D; Jakobs, R; Arnold, J C; Riemann, J F

2001-04-15

Photodynamic therapy (PDT) of dysplasia and early cancer of the esophagus could show good results in the potential of ablation. Unfortunately, the existing expensive and temperamental dye laser systems foiled a broad clinical use. In this pilot study, we investigated the feasibility of an inexpensive and maintenance-free diode laser system for PDT of dysplasia and early cancer in Barrett's esophagus. Eight patients with Barrett's esophagus and/or early cancer were treated. As light source we used a diode laser system with a maximum power output of 2 W and a wavelength of 633 +/- 3 nm. One patient was treated initially with Photosan-3, seven patients received 5-aminolevulinic acid. In all patients we could achieve reduction in length and/or histologically proven downgrading. In three quarters of the patients, complete eradication of adenocarcinoma could be attained. Columnar-lined metaplastic epithelium could also be completely eradicated. PDT using a diode laser system is comparably effective in Barrett's esophagus/early cancer as PDT with dye laser systems. PDT is a gentle and effective technique with little side effects.

Dislocation blocking by AlGaN hot electron injecting layer in the epitaxial growth of GaN terahertz Gunn diode

NASA Astrophysics Data System (ADS)

Li, Liang; Yang, Lin'an; Zhang, Jincheng; Hao, Yue

2013-09-01

This paper reports an efficient method to improve the crystal quality of GaN Gunn diode with AlGaN hot electron injecting layer (HEI). An evident reduction of screw dislocation and edge dislocation densities is achieved by the strain management and the enhanced lateral growth in high temperature grown AlGaN HEI layer. Compared with the top hot electron injecting layer (THEI) structure, the bottom hot electron injecting layer (BHEI) structure enhances the crystal quality of transit region due to the growth sequence modulation of HEI layer. A high Hall mobility of 2934 cm2/Vs at 77 K, a nearly flat downtrend of Hall mobility at the temperature ranging from 300 to 573 K, a low intensity of ratio of yellow luminescence band to band edge emission, a narrow band edge emission line-width, and a smooth surface morphology are observed for the BHEI structural epitaxy of Gunn diode, which indicates that AlGaN BHEI structure is a promising candidate for fabrication of GaN Gunn diodes in terahertz regime.

Comparative study of I- V methods to extract Au/FePc/p-Si Schottky barrier diode parameters

NASA Astrophysics Data System (ADS)

Oruç, Çiğdem; Altındal, Ahmet

2018-01-01

So far, various methods have been proposed to extract the Schottky diode parameters from measured current-voltage characteristics. In this work, Schottky barrier diode with structure of Au/2(3),9(10),16(17),23(24)-tetra(4-(4-methoxyphenyl)-8-methylcoumarin-7 oxy) phthalocyaninatoiron(II) (FePc)/p-Si was fabricated and current-voltage measurements were carried out on it. In addition, current-voltage measurements were also performed on Au/p-Si structure, without FePc, to clarify the influence of the presence of an interface layer on the device performance. The measured current-voltage characteristics indicate that the interface properties of a Schottky barrier diode can be controlled by the presence of an organic interface layer. It is found that the room temperature barrier height of Au/FePc/p-Si structure is larger than that of the Au/p-Si structure. The obtained forward bias current-voltage characteristics of the Au/FePc/p-Si device was analysed by five different analytical methods. It is found that the extracted values of SBD parameters strongly depends on the method used.

Characterization of a n+3C/n−4H SiC heterojunction diode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Minamisawa, R. A.; Mihaila, A.; Farkas, I.

We report on the fabrication of n + 3C/n-4H SiC heterojunction diodes (HJDs) potentially promising the ultimate thermal stability of the junction. The diodes were systematically analyzed by TEM, X-ray diffraction, AFM, and secondary ion mass spectroscopy, indicating the formation of epitaxial 3C-SiC crystal on top of 4H-SiC substrate with continuous interface, low surface roughness, and up to ∼7 × 10{sup 17 }cm{sup −3} dopant impurity concentration. The conduction band off-set is about 1 V as extracted from CV measurements, while the valence bands of both SiC polytypes are aligned. The HJDs feature opening voltage of 1.65 V, consistent with the barrier height of about 1.5 eV extractedmore » from CV measurement. We finally compare the electrical results of the n + 3C/n-4H SiC heterojunction diodes with those featuring Si and Ge doped anodes in order to evaluate current challenges involved in the fabrication of such devices.« less

Advantages of III-nitride laser diodes in solid-state lighting: Advantages of III-nitride laser diodes in solid-state lighting

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wierer, Jonathan J.; Tsao, Jeffrey Y.

2015-01-14

III-nitride laser diodes (LDs) are an interesting light source for solid-state lighting (SSL). Modelling of LDs is performed to reveal the potential advantages over traditionally used light-emitting diodes (LEDs). The first, and most notable, advantage is LDs have higher efficiency at higher currents when compared to LEDs. This is because Auger recombination that causes efficiency droop can no longer grow after laser threshold. Second, the same phosphor-converted methods used with LEDs can also be used with LDs to produce white light with similar color rendering and color temperature. Third, producing white light from color mixed emitters is equally challenging formore » both LEDs and LDs, with neither source having a direct advantage. Fourth, the LD emission is directional and can be more readily captured and focused, leading to the possibility of novel and more compact luminaires. Finally, the smaller area and higher current density operation of LDs provides them with a potential cost advantage over LEDs. These advantages make LDs a compelling source for future SSL.« less

Four-Pass Coupler for Laser-Diode-Pumped Solid-State Laser

NASA Technical Reports Server (NTRS)

Coyle, Donald B.

2008-01-01

A four-pass optical coupler affords increased (in comparison with related prior two-pass optical couplers) utilization of light generated by a laser diode in side pumping of a solid-state laser slab. The original application for which this coupler was conceived involves a neodymium-doped yttrium aluminum garnet (Nd:YAG) crystal slab, which, when pumped by a row of laser diodes at a wavelength of 809 nm, lases at a wavelength of 1,064 nm. Heretofore, typically, a thin laser slab has been pumped in two passes, the second pass occurring by virtue of reflection of pump light from a highly reflective thin film on the side opposite the side through which the pump light enters. In two-pass pumping, a Nd:YAG slab having a thickness of 2 mm (which is typical) absorbs about 84 percent of the 809-nm pump light power, leaving about 16 percent of the pump light power to travel back toward the laser diodes. This unused power can cause localized heating of the laser diodes, thereby reducing their lifetimes. Moreover, if the slab is thinner than 2 mm, then even more unused power travels back toward the laser diodes. The four-pass optical coupler captures most of this unused pump light and sends it back to the laser slab for two more passes. As a result, the slab absorbs more pump light, as though it were twice as thick. The gain and laser cavity beam quality of a smaller laser slab in conjunction with this optical coupler can thus be made comparable to those of a larger two-pass-pumped laser slab.

Comparing the effect of diode laser against acyclovir cream for the treatment of herpes labialis.

PubMed

Honarmand, Marieh; Farhadmollashahi, Leila; Vosoughirahbar, Ehsan

2017-06-01

Recently alternative therapies such as the use of diode laser therapy have been introduced for recurrent herpes labial infection. The aim of this study was to evaluate the effectiveness of diode laser for treatment of recurrent herpes labialis. This was single-blind randomized clinical trial to evaluate the efficacy of diode laser for the treatment of recurrent herpes labial. In total, 60 patients whit recurrent herpes simplex labialis were selected and randomly divided in to three groups. 20 patients received treatment whit diode laser (at a wavelength of 870 nm, energy density 4.5 j/cm2), 20 patients were treated with acyclovir cream 5%, 20 patients received treatment with laser-off (placebo). The end point was lesions crusting. Data analyzed by Tukey HSD Test and One-way ANOVA (at a significance level of 0.05) in SPSS-20 software. The mean length of recovery time (day) in the laser, off laser, and acyclovir groups was 2.20±0.41, 4.30±1.03, and 3.4±1.142, respectively. There is a significant difference between three groups in this regard ( P <0.0001). The mean duration of pain (day) was 1.35±0.74, 2.65±1.27, and 2.30±0.92 for laser, off laser, and acyclovir groups, respectively ( P <0.0001). Treatment with diode laser reduced the length of recovery time and pain severity faster than treatment with acyclovir cream. Key words: Recurrent herpes labial, Acyclovir, Low level laser therapy.

Characteristics of a large vacuum wave precursor on the SABRE voltage adder MITL and extraction ion diode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cuneo, M.E.; Hanson, D.L.; Menge, P.R.

SABRE (Sandia Accelerator and Beam Research Experiment) is a ten-cavity linear induction magnetically insulated voltage adder (6 MV, 300 kA) operated in positive polarity to investigate issues relevant to ion beam production and propagation for inertial confinement fusion. The voltage adder section is coupled to an applied-B extraction ion diode via a long coaxial output transmission line. Observations indicate that the power propagates in a vacuum wave prior to electron emission. After the electron emission threshold is reached, power propagates in a magnetically insulated wave. The precursor is observed to have a dominant impact on he turn-on, impedance history, andmore » beam characteristics of applied-B ion diodes since the precursor voltage is large enough to cause electron emission at the diode from both the cathode feed and cathode tips. The amplitude of the precursor at the load (3--4.5 MV) is a significant fraction of the maximum load voltage (5--6 MV) because (1) the transmission line gaps ( {approx} 9 cm at output) and therefore impedances are relatively large, and hence the electric field threshold for electron emission (200 to 300 kV/cm) is not reached until well into the power pulse rise time; and (2) the rapidly falling forward wave and diode impedance reduces the ratio of main pulse voltage to precursor voltage. Experimental voltage and current data from the transmission line and the ion diode will be presented and compared with TWOQUICK (2-D electromagnetic PIC code) simulations and analytic models.« less