Investigation of significantly high barrier height in Cu/GaN Schottky diode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Garg, Manjari, E-mail: meghagarg142@gmail.com; Kumar, Ashutosh; Singh, R.

2016-01-15

Current-voltage (I-V) measurements combined with analytical calculations have been used to explain mechanisms for forward-bias current flow in Copper (Cu) Schottky diodes fabricated on Gallium Nitride (GaN) epitaxial films. An ideality factor of 1.7 was found at room temperature (RT), which indicated deviation from thermionic emission (TE) mechanism for current flow in the Schottky diode. Instead the current transport was better explained using the thermionic field-emission (TFE) mechanism. A high barrier height of 1.19 eV was obtained at room temperature. X-ray photoelectron spectroscopy (XPS) was used to investigate the plausible reason for observing Schottky barrier height (SBH) that is significantlymore » higher than as predicted by the Schottky-Mott model for Cu/GaN diodes. XPS measurements revealed the presence of an ultrathin cuprous oxide (Cu{sub 2}O) layer at the interface between Cu and GaN. With Cu{sub 2}O acting as a degenerate p-type semiconductor with high work function of 5.36 eV, a high barrier height of 1.19 eV is obtained for the Cu/Cu{sub 2}O/GaN Schottky diode. Moreover, the ideality factor and barrier height were found to be temperature dependent, implying spatial inhomogeneity of barrier height at the metal semiconductor interface.« less

Bulk unipolar diodes formed in GaAs by ion implantation

NASA Astrophysics Data System (ADS)

Hutchinson, S.; Kelly, M. J.; Gwilliam, R.; Sealy, B. J.; Carr, M.

1999-01-01

In an attempt to emulate epitaxially manufactured semiconductor multilayers for microwave device applications, we have produced a camel diode structure in GaAs for the first time, using the tail of a Mg + implant into a molecular beam epitaxially grown n +-n --n + structure. Using a range of ion energies and doses, samples are observed to exhibit bulk unipolar diode characteristics. With low dose and energy, a diode with barrier height of ˜0.8 V and ideality factor ˜1.25 is achieved. 'Punch through' diode characteristics are obtained at high ion dose and energy, some with knee voltages in excess of 7 V.

Interface state density distribution in Au/n-ZnO nanorods Schottky diodes

NASA Astrophysics Data System (ADS)

Faraz, S. M.; Willander, M.; Wahab, Q.

2012-04-01

Interface states density (NSS) distribution is extracted in Au/ ZnO Schottky diodes. Nanorods of ZnO are grown on silver (Ag) using aqueous chemical growth (ACG) technique. Well aligned hexagonal-shaped vertical nanorods of a mean diameter of 300 - 450 nm and 1.3 -1.9 μm high are revealed in SEM. Gold (Au) Schottky contacts of thickness 60 nm and 1.5mm diameter were evaporated. For electrical characterization of Schottky diodes current-voltage (I-V) and capacitance-Voltage (C-V) measurements are performed. The diodes exhibited a typical non-linear rectifying behavior with a barrier height of 0.62eV and ideality factor of 4.3. Possible reasons for low barrier height and high ideality factor have been addressed. Series resistance (RS) has been calculated from forward I-V characteristics using Chueng's function. The density of interfacial states (NSS) below the conduction band (EC-ESS) is extracted using I-V and C-V measured values. A decrease in interface states density (NSS) is observed from 3.74 × 1011 - 7.98 × 1010 eV-1 cm-2 from 0.30eV - 0.61eV below the conduction band edge.

Characterisation of temperature dependent parameters of multi-quantum well (MQW) Ti/Au/n-AlGaAs/n-GaAs/n-AlGaAs Schottky diodes

NASA Astrophysics Data System (ADS)

Filali, Walid; Sengouga, Nouredine; Oussalah, Slimane; Mari, Riaz H.; Jameel, Dler; Al Saqri, Noor Alhuda; Aziz, Mohsin; Taylor, David; Henini, Mohamed

2017-11-01

Forward and reverse current-voltage (Isbnd V) of Ti/Au/n-Al0.33Ga0.67As/n-GaAs/n-Al0.33Ga0.67As multi-quantum well (MQW) Schottky diodes were measured over a range of temperatures from 20 to 400 K by a step of 20 K. The Schottky diodes parameters were then extracted from these characteristics. The Cheung method is used for this purpose, assuming a thermionic conduction mechanism. The extracted ideality factor decrease with increasing temperatures. But their values at low temperatures were found to be unrealistic. In order to explain this uncertainty, three assumptions were explored. Firstly an assumed inhomogeneous barrier height gave better parameters especially the Richardson constant but the ideality factor is still unrealistic at low temperatures. Secondly, by using numerical simulation, it was demonstrated that defects including interface states are not responsible for the apparent unrealistic Schottky diode parameters. The third assumption is the tunnelling mechanism through the barrier in the low temperature range. At these lower temperatures, the tunnelling mechanism was more suitable to explain the extracted parameters values.

Diester Molecules for Organic-Based Electrical and Photoelectrical Devices

NASA Astrophysics Data System (ADS)

Topal, Giray; Tombak, Ahmet; Yigitalp, Esref; Batibay, Derya; Kilicoglu, Tahsin; Ocak, Yusuf Selim

2017-07-01

Diester derivatives of terephthalic acid molecules were synthesized according to the literature. Au/Diester derivatives/ n-Si organic-inorganic (OI) heterojunction-type devices were fabricated, and the current-voltage ( I- V) characteristics of the devices have been investigated at room temperature. I- V characteristics demonstrated that all diodes had excellent rectification properties. Primary diode parameters such as series resistance and barrier height were extracted by using semi-log I- V plots and Norde methods, and were compared. It was seen that there was a substantial agreement between results obtained from two methods. Calculated barrier height values were about the same with 0.02-eV differences that were attributed to the series resistance. Ideality factors, which show how the diode closes to ideal diodes, were also extracted from semi-log I- V plots. Thus, the modification of the Au/ n-Si diode potential barrier was accomplished using diester derivatives as an interlayer. The I- V measurements were repeated to characterize the devices at 100 mW/cm2 illumination intensity with the help of a solar simulator with an AM1.5G filter.

Temperature dependent electrical characterization of organic Schottky diode based on thick MgPc films

NASA Astrophysics Data System (ADS)

Singh, J.; Sharma, R. K.; Sule, U. S.; Goutam, U. K.; Gupta, Jagannath; Gadkari, S. C.

2017-07-01

Magnesium phthalocyanine (MgPc) based Schottky diode on indium tin oxide (ITO) substrate was fabricated by thermal evaporation method. The dark current voltage characteristics of the prepared ITO-MgPc-Al heterojunction Schottky diode were measured at different temperatures. The diode showed the non-ideal rectification behavior under forward and reverse bias conditions with a rectification ratio (RR) of 56 at  ±1 V at room temperature. Under forward bias, thermionic emission and space charge limited conduction (SCLC) were found to be the dominant conduction mechanisms at low (below 0.6 V) and high voltages (above 0.6 V) respectively. Under reverse bias conditions, Poole-Frenkel (field assisted thermal detrapping of carriers) was the dominant conduction mechanism. Three different approaches namely, I-V plots, Norde and Cheung methods were used to determine the diode parameters including ideality factor (n), barrier height (Φb), series resistance (R s) and were compared. SCLC mechanism showed that the trap concentration is 5.52  ×  1022 m-3 and it lies at 0.46 eV above the valence band edge.

A concentration-independent micro/nanofluidic active diode using an asymmetric ion concentration polarization layer.

PubMed

Lee, Hyekyung; Kim, Junsuk; Kim, Hyeonsoo; Kim, Ho-Young; Lee, Hyomin; Kim, Sung Jae

2017-08-24

Over the past decade, nanofluidic diodes that rectify ionic currents (i.e. greater current in one direction than in the opposite direction) have drawn significant attention in biomolecular sensing, switching and energy harvesting devices. To obtain current rectification, conventional nanofluidic diodes have utilized complex nanoscale asymmetry such as nanochannel geometry, surface charge density, and reservoir concentration. Avoiding the use of sophisticated nano-asymmetry, micro/nanofluidic diodes using microscale asymmetry have been recently introduced; however, their diodic performance is still impeded by (i) low (even absent) rectification effects at physiological concentrations over 100 mM and strong dependency on the bulk concentration, and (ii) the fact that they possess only passive predefined rectification factors. Here, we demonstrated a new class of micro/nanofluidic diode with an ideal perm-selective nanoporous membrane based on ion concentration polarization (ICP) phenomenon. Thin side-microchannels installed near a nanojunction served as mitigators of the amplified electrokinetic flows generated by ICP and induced convective salt transfer to the nanoporous membrane, leading to actively controlled micro-scale asymmetry. Using this device, current rectifications were successfully demonstrated in a wide range of electrolytic concentrations (10 -5 M to 3 M) as a function of the fluidic resistance of the side-microchannels. Noteworthily, it was confirmed that the rectification factors were independent from the bulk concentration due to the ideal perm-selectivity. Moreover, the rectification of the presenting diode was actively controlled by adjusting the external convective flows, while that of the previous diode was passively determined by invariant nanoscale asymmetry.

Enhanced diode characteristics of organic solar cell with silanized fluorine doped tin oxide electrode

NASA Astrophysics Data System (ADS)

Sachdeva, Sheenam; Sharma, Sameeksha; Singh, Devinder; Tripathi, S. K.

2018-05-01

To investigate the diode characteristics of organic solar cell based on the planar heterojunction of 4,4'- cyclohexylidenebis[N,N-bis(4-methylphenyl)benzenamine] (TAPC) and fullerene (C70), we report the use of silanized fluorine-doped tin oxide (FTO) anode with N1-(3-trimethoxysilylpropyl)diethyltriamine (DETA) forming monolayer. The use of silanized FTO results in the decrease of saturation current density and diode ideality factor of the device. Such silanized FTO anode is found to enhance the material quality and improve the device properties.

Correlation between morphological defects, electron beam-induced current imaging, and the electrical properties of 4H-SiC Schottky diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Y.; Ali, G.N.; Mikhov, M.K.

2005-01-01

Defects in SiC degrade the electrical properties and yield of devices made from this material. This article examines morphological defects in 4H-SiC and defects visible in electron beam-induced current (EBIC) images and their effects on the electrical characteristics of Schottky diodes. Optical Nomarski microscopy and atomic force microscopy were used to observe the morphological defects, which are classified into 26 types based on appearance alone. Forward and reverse current-voltage characteristics were used to extract barrier heights, ideality factors, and breakdown voltages. Barrier heights decrease about linearly with increasing ideality factor, which is explained by discrete patches of low barrier heightmore » within the main contact. Barrier height, ideality, and breakdown voltage all degrade with increasing device diameter, suggesting that discrete defects are responsible. Electroluminescence was observed under reverse bias from microplasmas associated with defects containing micropipes. EBIC measurements reveal several types of features corresponding to recombination centers. The density of dark spots observed by EBIC correlates strongly with ideality factor and barrier height. Most morphological defects do not affect the reverse characteristics when no micropipes are present, but lower the barrier height and worsen the ideality factor. However, certain multiple-tailed defects, irregularly shaped defects and triangular defects with 3C inclusions substantially degrade both breakdown voltage and barrier height, and account for most of the bad devices that do not contain micropipes. Micropipes in these wafers are also frequently found to be of Type II, which do not run parallel to the c axis.« less

Correlation Between Morphological Defects, Electron Beam Induced Current Imaging, and the Electrical Properties of 4H-SiC Schottky Diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang,Y.; Ali, G.; Mikhov, M.

2005-01-01

Defects in SiC degrade the electrical properties and yield of devices made from this material. This article examines morphological defects in 4H-SiC and defects visible in electron beam-induced current (EBIC) images and their effects on the electrical characteristics of Schottky diodes. Optical Nomarski microscopy and atomic force microscopy were used to observe the morphological defects, which are classified into 26 types based on appearance alone. Forward and reverse current-voltage characteristics were used to extract barrier heights, ideality factors, and breakdown voltages. Barrier heights decrease about linearly with increasing ideality factor, which is explained by discrete patches of low barrier heightmore » within the main contact. Barrier height, ideality, and breakdown voltage all degrade with increasing device diameter, suggesting that discrete defects are responsible. Electroluminescence was observed under reverse bias from microplasmas associated with defects containing micropipes. EBIC measurements reveal several types of features corresponding to recombination centers. The density of dark spots observed by EBIC correlates strongly with ideality factor and barrier height. Most morphological defects do not affect the reverse characteristics when no micropipes are present, but lower the barrier height and worsen the ideality factor. However, certain multiple-tailed defects, irregularly shaped defects and triangular defects with 3C inclusions substantially degrade both breakdown voltage and barrier height, and account for most of the bad devices that do not contain micropipes. Micropipes in these wafers are also frequently found to be of Type II, which do not run parallel to the c axis.« less

Organic-inorganic Au/PVP/ZnO/Si/Al semiconductor heterojunction characteristics

NASA Astrophysics Data System (ADS)

Mokhtari, H.; Benhaliliba, M.

2017-11-01

The paper reports the fabrication and characterization of a novel Au/PVP/ZnO/Si/Al semiconductor heterojunction (HJ) diode. Both inorganic n type ZnO and organic polyvinyl pyrrolidone (PVP) layers have grown by sol-gel spin-coating route at 2000 rpm. The front and back metallic contacts are thermally evaporated in a vacuum at pressure of 10-6 Torr having a diameter of 1.5 mm and a thickness of 250 nm. The detailed analysis of the forward and reverse bias current-voltage characteristics has been provided. Consequently, many electronic parameters, such as ideality factor, rectification coefficient, carrier concentration, series resistance, are then extracted. Based upon our results a non-ideal diode behavior is revealed and ideality factor exceeds the unity (n > 4). A high rectifying (~4.6 × 10 4) device is demonstrated. According to Cheung-Cheung and Norde calculation models, the barrier height and series resitance are respectively of 0.57 eV and 30 kΩ. Ohmic and space charge limited current (SCLC) conduction mechanisms are demonstrated. Such devices will find applications as solar cell, photodiode and photoconductor.

Fabrication and characterization of Ga-doped ZnO / Si heterojunction nanodiodes

NASA Astrophysics Data System (ADS)

Akgul, Guvenc; Akgul, Funda Aksoy

2017-02-01

In this study, temperature-dependent electrical properties of n-type Ga-doped ZnO thin film / p-type Si nanowire heterojunction diodes were reported. Metal-assisted chemical etching (MACE) process was performed to fabricate Si nanowires. Ga-doped ZnO films were then deposited onto nanowires through chemical bath deposition (CBD) technique to build three-dimensional nanowire-based heterojunction diodes. Fabricated devices revealed significant diode characteristics in the temperature range of 220 - 360 K. Electrical measurements shown that diodes had a well-defined rectifying behavior with a good rectification ratio of 103 ±3 V at room temperature. Ideality factor (n) were changed from 2.2 to 1.2 with increasing temperature.

Gate Modulation of Graphene-ZnO Nanowire Schottky Diode.

PubMed

Liu, Ren; You, Xu-Chen; Fu, Xue-Wen; Lin, Fang; Meng, Jie; Yu, Da-Peng; Liao, Zhi-Min

2015-05-06

Graphene-semiconductor interface is important for the applications in electronic and optoelectronic devices. Here we report the modulation of the electric transport properties of graphene/ZnO nanowire Schottky diode by gate voltage (Vg). The ideality factor of the graphene/ZnO nanowire Schottky diode is ~1.7, and the Schottky barrier height is ~0.28 eV without external Vg. The Schottky barrier height is sensitive to Vg due to the variation of Fermi level of graphene. The barrier height increases quickly with sweeping Vg towards the negative value, while decreases slowly towards the positive Vg. Our results are helpful to understand the fundamental mechanism of the electric transport in graphene-semiconductor Schottky diode.

High performance Schottky diodes based on indium-gallium-zinc-oxide

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Jiawei; Song, Aimin, E-mail: A.Song@manchester.ac.uk; Xin, Qian

Indium-gallium-zinc-oxide (IGZO) Schottky diodes exhibit excellent performance in comparison with conventional devices used in future flexible high frequency electronics. In this work, a high performance Pt IGZO Schottky diode was presented by using a new fabrication process. An argon/oxygen mixture gas was introduced during the deposition of the Pt layer to reduce the oxygen deficiency at the Schottky interface. The diode showed a high barrier height of 0.92 eV and a low ideality factor of 1.36 from the current–voltage characteristics. Even the radius of the active area was 0.1 mm, and the diode showed a cut-off frequency of 6 MHz in themore » rectifier circuit. Using the diode as a demodulator, a potential application was also demonstrated in this work.« less

Organic/Inorganic Hybrid p-n Junction with PEDOT Nanoparticles for Light-Emitting Diode

NASA Astrophysics Data System (ADS)

Kim, M. S.; Jin, S. M.; Cho, M. Y.; Choi, H. Y.; Kim, G. S.; Jeon, S. M.; Yim, K. G.; Kim, H. G.; Shim, K. B.; Kang, B. K.; Kim, Y.; Lee, D. Y.; Kim, J. S.; Kim, J. S.; Leem, J. Y.

2011-12-01

A heavily Si-doped GaN/polymer hybrid structure with p-type poly(3,4-ethylene-dioxythiophene):beta-1,3-glucan (PEDOT nanoparticle) interface layer has been fabricated. The Si-doped GaN thin film with carrier concentration of 1×1019 cm-3 was grown by metal-organic chemical vapor deposition (MOCVD). The PEDOT nanoparticle with various sizes ranging from 60 to 120 nm was synthesized via a miniemulsion polymerization process. The electrical conductivity of the PEDOT nanoparticle is less than 1.2 S/cm. The current-voltage (I-V) characteristic of the hybrid structure shows diode-like behavior. The I-V characteristic was examined in the framework of the thermionic emission model. The ideality factor and barrier height of the hybrid structure were obtained as 5.6 and 0.41 eV, respectively. The value of ideality factor is decreased by inserting the PEDOT nanoparticle interface layer.

Electrical parameters of Au/n-GaN and Pt/n-GaN Schottky diodes

NASA Astrophysics Data System (ADS)

Kadaoui, Mustapha Amine; Bouiadjra, Wadi Bachir; Saidane, Abdelkader; Belahsene, Sofiane; Ramdane, Abderrahim

2015-06-01

Electrical properties of Si-doped GaN epitaxial layers, grown on a c-plane sapphire substrate by MOCVD to form Schottky diodes with Gold (Au) and platinum (Pt) and using Ti/Al/Au as Ohmic contact, are investigated. Characterization was performed through I-V and C-V-f measurements at room temperature. Schottky barrier height (Φb), ideality factor (n), and series resistance (Rs) were extracted from forward I-V characteriztics using Cheung and Lien methods. Φb, doping concentration (Nd) and Rs frequency dependence were extracted from C-V-f characteriztics. Pt/n-GaN shows a non-linear behavior with a barrier height of 0.63 eV, an ideality factor of 2.3, and series resistance of 63 Ω. Au/n-GaN behaves like two diodes in parallel with two barrier heights of (0.83 and 0.9 eV), two ideality factors of (5.8 and 3.18) and two series resistance of (10.6 and 68 Ω). Interface state properties in both samples have been investigated taking into account the bias dependence of the effective barrier height. The amount of stimulated traps along the energy-gap at the interface increases with voltage bias, which increases NSS exponentially from 4.24 ṡ 1013 to 3.67 ṡ 1014 eV-1 cm-2 in the range (Ec - 0.17) to (Ec - 0.61) eV for Pt/n-GaN, and from 2.3 ṡ 1013 to 1.14 ṡ 1014 eV-1 cm-2, in the range (Ec - 0.31) to (Ec - 0.82) eV for Au/n-GaN. The values of interface states density and series resistance for both samples are found to decrease with increasing frequency. Peak intensity was a measure of active interface states. C-V-f results confirm the model of the Schottky diode with a native interfacial insulator layer along the space charge region.

Electronic Characterization of Au/DNA/ITO Metal-Semiconductor-Metal Diode and Its Application as a Radiation Sensor.

PubMed

Al-Ta'ii, Hassan Maktuff Jaber; Periasamy, Vengadesh; Amin, Yusoff Mohd

2016-01-01

Deoxyribonucleic acid or DNA molecules expressed as double-stranded (DSS) negatively charged polymer plays a significant role in electronic states of metal/silicon semiconductor structures. Electrical parameters of an Au/DNA/ITO device prepared using self-assembly method was studied by using current-voltage (I-V) characteristic measurements under alpha bombardment at room temperature. The results were analyzed using conventional thermionic emission model, Cheung and Cheung's method and Norde's technique to estimate the barrier height, ideality factor, series resistance and Richardson constant of the Au/DNA/ITO structure. Besides demonstrating a strongly rectifying (diode) characteristic, it was also observed that orderly fluctuations occur in various electrical parameters of the Schottky structure. Increasing alpha radiation effectively influences the series resistance, while the barrier height, ideality factor and interface state density parameters respond linearly. Barrier height determined from I-V measurements were calculated at 0.7284 eV for non-radiated, increasing to about 0.7883 eV in 0.036 Gy showing an increase for all doses. We also demonstrate the hypersensitivity phenomena effect by studying the relationship between the series resistance for the three methods, the ideality factor and low-dose radiation. Based on the results, sensitive alpha particle detectors can be realized using Au/DNA/ITO Schottky junction sensor.

Electronic Characterization of Au/DNA/ITO Metal-Semiconductor-Metal Diode and Its Application as a Radiation Sensor

PubMed Central

Al-Ta’ii, Hassan Maktuff Jaber; Periasamy, Vengadesh; Amin, Yusoff Mohd

2016-01-01

Deoxyribonucleic acid or DNA molecules expressed as double-stranded (DSS) negatively charged polymer plays a significant role in electronic states of metal/silicon semiconductor structures. Electrical parameters of an Au/DNA/ITO device prepared using self-assembly method was studied by using current–voltage (I-V) characteristic measurements under alpha bombardment at room temperature. The results were analyzed using conventional thermionic emission model, Cheung and Cheung’s method and Norde’s technique to estimate the barrier height, ideality factor, series resistance and Richardson constant of the Au/DNA/ITO structure. Besides demonstrating a strongly rectifying (diode) characteristic, it was also observed that orderly fluctuations occur in various electrical parameters of the Schottky structure. Increasing alpha radiation effectively influences the series resistance, while the barrier height, ideality factor and interface state density parameters respond linearly. Barrier height determined from I–V measurements were calculated at 0.7284 eV for non-radiated, increasing to about 0.7883 eV in 0.036 Gy showing an increase for all doses. We also demonstrate the hypersensitivity phenomena effect by studying the relationship between the series resistance for the three methods, the ideality factor and low-dose radiation. Based on the results, sensitive alpha particle detectors can be realized using Au/DNA/ITO Schottky junction sensor. PMID:26799703

Temperature dependent electrical characterisation of Pt/HfO{sub 2}/n-GaN metal-insulator-semiconductor (MIS) Schottky diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shetty, Arjun, E-mail: arjun@ece.iisc.ernet.in; Vinoy, K. J.; Roul, Basanta

2015-09-15

This paper reports an improvement in Pt/n-GaN metal-semiconductor (MS) Schottky diode characteristics by the introduction of a layer of HfO{sub 2} (5 nm) between the metal and semiconductor interface. The resulting Pt/HfO{sub 2}/n-GaN metal-insulator-semiconductor (MIS) Schottky diode showed an increase in rectification ratio from 35.9 to 98.9(@ 2V), increase in barrier height (0.52 eV to 0.63eV) and a reduction in ideality factor (2.1 to 1.3) as compared to the MS Schottky. Epitaxial n-type GaN films of thickness 300nm were grown using plasma assisted molecular beam epitaxy (PAMBE). The crystalline and optical qualities of the films were confirmed using high resolutionmore » X-ray diffraction and photoluminescence measurements. Metal-semiconductor (Pt/n-GaN) and metal-insulator-semiconductor (Pt/HfO{sub 2}/n-GaN) Schottky diodes were fabricated. To gain further understanding of the Pt/HfO{sub 2}/GaN interface, I-V characterisation was carried out on the MIS Schottky diode over a temperature range of 150 K to 370 K. The barrier height was found to increase (0.3 eV to 0.79 eV) and the ideality factor decreased (3.6 to 1.2) with increase in temperature from 150 K to 370 K. This temperature dependence was attributed to the inhomogeneous nature of the contact and the explanation was validated by fitting the experimental data into a Gaussian distribution of barrier heights.« less

Electrical characteristics of TMAH-surface treated Ni/Au/Al2O3/GaN MIS Schottky structures

NASA Astrophysics Data System (ADS)

Reddy, M. Siva Pratap; Lee, Jung-Hee; Jang, Ja-Soon

2014-03-01

The electrical characteristics and reverse leakage mechanisms of tetramethylammonium hydroxide (TMAH) surface-treated Ni/Au/Al2O3/GaN metal-insulator-semiconductor (MIS) diodes were investigated by using the current-voltage ( I-V) and capacitance-voltage ( C-V) characteristics. The MIS diode was formed on n-GaN after etching the AlGaN in the AlGaN/GaN heterostructures. The TMAH-treated MIS diode showed better Schottky characteristics with a lower ideality factor, higher barrier height and lower reverse leakage current compared to the TMAH-free MIS diode. In addition, the TMAH-free MIS diodes exhibited a transition from Poole-Frenkel emission at low voltages to Schottky emission at high voltages, whereas the TMAH-treated MIS diodes showed Schottky emission over the entire voltage range. Reasonable mechanisms for the improved device-performance characteristics in the TMAH-treated MIS diode are discussed in terms of the decreased interface state density or traps associated with an oxide material and the reduced tunneling probability.

Fabrication and characterization of 8.87 THz schottky barrier mixer diodes for mixer

NASA Astrophysics Data System (ADS)

Wang, Wenjie; Li, Qian; An, Ning; Tong, Xiaodong; Zeng, Jianping

2018-04-01

In this paper we report on the fabrication and characterization of GaAs-based THz schottky barrier mixer diodes. Considering the analyzed results as well as fabrication cost and complexity, a group of trade-off parameters was determined. Electron-beam lithography and air-bridge technique have been used to obtain schottky diodes with a cut off frequency of 8.87 THz. Equivalent values of series resistance, ideal factor and junction capacitance of 10.2 (1) Ω, 1.14 (0.03) and 1.76(0.03) respectively have been measured for 0.7um diameter anode devices by DC and RF measurements. The schottky barrier diodes fabrication process is fully planar and very suitable for integration in THz frequency multiplier and mixer circuits. THz Schottky barrier diodes based on such technology with 2 μm diameter anodes have been tested at 1.6 THz in a sub-harmonic mixer.

TCAD simulation for alpha-particle spectroscopy using SIC Schottky diode.

PubMed

Das, Achintya; Duttagupta, Siddhartha P

2015-12-01

There is a growing requirement of alpha spectroscopy in the fields context of environmental radioactive contamination, nuclear waste management, site decommissioning and decontamination. Although silicon-based alpha-particle detection technology is mature, high leakage current, low displacement threshold and radiation hardness limits the operation of the detector in harsh environments. Silicon carbide (SiC) is considered to be excellent material for radiation detection application due to its high band gap, high displacement threshold and high thermal conductivity. In this report, an alpha-particle-induced electron-hole pair generation model for a reverse-biased n-type SiC Schottky diode has been proposed and verified using technology computer aided design (TCAD) simulations. First, the forward-biased I-V characteristics were studied to determine the diode ideality factor and compared with published experimental data. The ideality factor was found to be in the range of 1.4-1.7 for a corresponding temperature range of 300-500 K. Next, the energy-dependent, alpha-particle-induced EHP generation model parameters were optimised using transport of ions in matter (TRIM) simulation. Finally, the transient pulses generated due to alpha-particle bombardment were analysed for (1) different diode temperatures (300-500 K), (2) different incident alpha-particle energies (1-5 MeV), (3) different reverse bias voltages of the 4H-SiC-based Schottky diode (-50 to -250 V) and (4) different angles of incidence of the alpha particle (0°-70°).The above model can be extended to other (wide band-gap semiconductor) device technologies useful for radiation-sensing application. © The Author 2015. Published by Oxford University Press. All rights reserved. For Permissions, please email: journals.permissions@oup.com.

Diode Laser for Laryngeal Surgery: a Systematic Review.

PubMed

Arroyo, Helena Hotz; Neri, Larissa; Fussuma, Carina Yuri; Imamura, Rui

2016-04-01

Introduction The diode laser has been frequently used in the management of laryngeal disorders. The portability and functional diversity of this tool make it a reasonable alternative to conventional lasers. However, whether diode laser has been applied in transoral laser microsurgery, the ideal parameters, outcomes, and adverse effects remain unclear. Objective The main objective of this systematic review is to provide a reliable evaluation of the use of diode laser in laryngeal diseases, trying to clarify its ideal parameters in the larynx, as well as its outcomes and complications. Data Synthesis We included eleven studies in the final analysis. From the included articles, we collected data on patient and lesion characteristics, treatment (diode laser's parameters used in surgery), and outcomes related to the laser surgery performed. Only two studies were prospective and there were no randomized controlled trials. Most of the evidence suggests that the diode laser can be a useful tool for treatment of different pathologies in the larynx. In this sense, the parameters must be set depending on the goal (vaporization, section, or coagulation) and the clinical problem. The literature lacks studies on the ideal parameters of the diode laser in laryngeal surgery. The available data indicate that diode laser is a useful tool that should be considered in laryngeal surgeries. Thus, large, well-designed studies correlated with diode compared with other lasers are needed to better estimate its effects.

Diode Laser for Laryngeal Surgery: a Systematic Review

PubMed Central

Arroyo, Helena Hotz; Neri, Larissa; Fussuma, Carina Yuri; Imamura, Rui

2016-01-01

Introduction The diode laser has been frequently used in the management of laryngeal disorders. The portability and functional diversity of this tool make it a reasonable alternative to conventional lasers. However, whether diode laser has been applied in transoral laser microsurgery, the ideal parameters, outcomes, and adverse effects remain unclear. Objective The main objective of this systematic review is to provide a reliable evaluation of the use of diode laser in laryngeal diseases, trying to clarify its ideal parameters in the larynx, as well as its outcomes and complications. Data Synthesis We included eleven studies in the final analysis. From the included articles, we collected data on patient and lesion characteristics, treatment (diode laser's parameters used in surgery), and outcomes related to the laser surgery performed. Only two studies were prospective and there were no randomized controlled trials. Most of the evidence suggests that the diode laser can be a useful tool for treatment of different pathologies in the larynx. In this sense, the parameters must be set depending on the goal (vaporization, section, or coagulation) and the clinical problem. Conclusion: The literature lacks studies on the ideal parameters of the diode laser in laryngeal surgery. The available data indicate that diode laser is a useful tool that should be considered in laryngeal surgeries. Thus, large, well-designed studies correlated with diode compared with other lasers are needed to better estimate its effects. PMID:27096024

In situ current-voltage characterization of swift heavy ion irradiated Au/n-GaAs Schottky diode at low temperature

NASA Astrophysics Data System (ADS)

Singh, R.; Arora, S. K.; Singh, J. P.; Kanjilal, D.

A Au/n-GaAs(100) Schottky diode was irradiated at 80 K by a 180 MeV Ag-107(14+) ion beam. In situ current-voltage (I--V) characterization of the diode was performed at various irradiation fluences ranging from 1x10(10) to 1x10(13) ions cm(-2) . The semiconductor was heavily doped (carrier concentration=1x10(18) cm(-3)), hence thermionic field emission was assumed to be the dominant current transport mechanism in the diode. Systematic variations in various parameters of the Schottky diode like characteristic energy E-0 , ideality factor n , reverse saturation current I-S , flatband barrier height Phi(bf) and reverse leakage current I-R have been observed with respect to the irradiation fluence. The nuclear and electronic energy losses of the swift heavy ion affect the interface state density at the metal-semiconductor interface resulting in observed variations in Schottky diode parameters.

Colloidal quantum dot active layers for light emitting diodes

NASA Astrophysics Data System (ADS)

Pagan, Jennifer G.; Stokes, Edward B.; Patel, Kinnari; Burkhart, Casey C.; Ahrens, Michael T.; Barletta, Philip T.; O'Steen, Mark

2006-07-01

In this paper the preliminary results of incorporating a novel active layer into a GaN light emitting diode (LED) are discussed. Integration of colloidal CdSe quantum dots into a GaN LED active layer is demonstrated. Properties of p-type Mg doped overgrowth GaN are examined via circular transmission line method (CTLM). Effects on surface roughness due to the active layer incorporation are examined using atomic force microscopy (AFM). Electroluminescence of LED test structures is reported, and an ideality factor of n = 1.6 is demonstrated.

Dye based photodiodes for solar energy applications

NASA Astrophysics Data System (ADS)

Mensah-Darkwa, K.; Ocaya, R.; Dere, A.; Al-Sehemi, Abdullah G.; Al-Ghamdi, Ahmed A.; Soylu, M.; Gupta, R. K.; Yakuphanoglu, F.

2017-10-01

Coumarin (CO) doped methylene blue (MB) organic photo-devices were fabricated. The CO-doped MB (0.00, 0.01, 0.03, 0.05, 0.1 wt% CO) were coated onto the surface of a p-type Si substrate by drop casting method. Some electrical parameters of the devices have been examined by current-voltage ( I- V), capacitance-voltage ( C- V), and conductance-voltage ( G- V) measurements. The fabricated devices had excellent rectifying properties. The diode exhibits a non-ideal diode behavior due to the series resistance and interface layer. The ideality factor, the barrier height, and the series resistance values of the diode as a function of doping and light illumination have been estimated using modified Cheung-Cheung and Norde's method. The highest I photo/ I dark photosensitivity of 5606 was observed for the diode having 0.01 CO doping at 100 mW/cm2 under -3 V. Furthermore, change of capacitance and conductance measurements with frequency is related to the existence of interface states. A maximum power conversion efficiency of 2.4% is estimated for the fabricated devices. The results reveal that coumarin-doped methylene blue/ p-Si heterojunction can be used as a photodiode in optoelectronic applications. It is also usable in low-power photovoltaic applications.

Electrical characterization of ZnO/NiO p-n junction prepared by the sol-gel method

NASA Astrophysics Data System (ADS)

Merih Akyuzlu, A.; Dagdelen, Fethi; Gultek, Ahmet; Hendi, A. A.; Yakuphanoglu, Fahrettin

2017-04-01

ZnO and NiO films were synthesized on fluourine-doped tin oxide (FTO) glass substrate by the sol-gel method. The surface morphology of the films was investigated by atomic force microscopy. The optical band gaps of the ZnO and NiO films were found to be 3.198 and 3.827eV, respectively. A ZnO/NiO p-n junction diode was prepared and electrical charge transport mechanism of the diode was analyzed using thermionic emission and Norde functions. The ideality factor, barrier height and series resistance of the diode were determined to be 6.46, 1.036eV and 39.1 M {Ω} , respectively. The obtained results indicate that ZnO/NiO p-n junction can be used as transparent diode for optic communications.

Fabrication of p-Si/n-ZnO:Al heterojunction diode and determination of electrical parameters

NASA Astrophysics Data System (ADS)

Ilican, Saliha; Gorgun, Kamuran; Aksoy, Seval; Caglar, Yasemin; Caglar, Mujdat

2018-03-01

We present a fundamental experimental study of a microwave assisted chemical bath deposition (MW-CBD) method for Al doped ZnO films. Field emission scanning electron microscopy (FESEM) and X-ray diffraction (XRD) spectroscopy were used to analyze the microstructures and crystalline structures of these films, respectively. The p-Si/n-ZnO:Al heterojunction diodes were fabricated. The current-voltage (I-V) characteristics of these diodes were measured at room temperature. The important electrical parameters such as series resistance, the ideality factor and the barrier height were determined by performing plots from the forward bias I-V characteristics using different methods. The obtained results indicate that Al doping improve the electrical properties of the p-Si/n-ZnO diode. The best rectification properties were observed in the p-Si/n-ZnO:5%Al heterojunction diode, so only capacitance-voltage (C-V) measurements of this diode were taken. Electrical parameter values such as series resistance, the built-in potential and the acceptor concentration calculated for this heterojunction diode.

Accuracy of expressions for the fill factor of a solar cell in terms of open-circuit voltage and ideality factor

NASA Astrophysics Data System (ADS)

Leilaeioun, Mehdi; Holman, Zachary C.

2016-09-01

An approximate expression proposed by Green predicts the maximum obtainable fill factor (FF) of a solar cell from its open-circuit voltage (Voc). The expression was originally suggested for silicon solar cells that behave according to a single-diode model and, in addition to Voc, it requires an ideality factor as input. It is now commonly applied to silicon cells by assuming a unity ideality factor—even when the cells are not in low injection—as well as to non-silicon cells. Here, we evaluate the accuracy of the expression in several cases. In particular, we calculate the recombination-limited FF and Voc of hypothetical silicon solar cells from simulated lifetime curves, and compare the exact FF to that obtained with the approximate expression using assumed ideality factors. Considering cells with a variety of recombination mechanisms, wafer doping densities, and photogenerated current densities reveals the range of conditions under which the approximate expression can safely be used. We find that the expression is unable to predict FF generally: For a typical silicon solar cell under one-sun illumination, the error is approximately 6% absolute with an assumed ideality factor of 1. Use of the expression should thus be restricted to cells under very low or very high injection.

Noise and loss in balanced and subharmonically pumped mixers. I - Theory. II - Application

NASA Technical Reports Server (NTRS)

Kerr, A. R.

1979-01-01

The theory of noise and frequency conversion for two-diode balanced and subharmonically pumped mixers is presented. The analysis is based on the equivalent circuit of the Schottky diode, having nonlinear capacitance, series resistance, and shot and thermal noise. Expressions for the conversion loss, noise temperature, and input and output impedances are determined in a form suitable for numerical analysis. In Part II, the application of the theory to practical mixers is demonstrated, and the properties of some two-diode mixers are examined. The subharmonically pumped mixer is found to be much more strongly affected by the loop inductance than the balanced mixer, and the ideal two-diode mixer using exponential diodes has a multiport noise-equivalent network (attenuator) similar to that of the ideal single-diode mixer. It is concluded that the theory can be extended to mixers with more than two diodes and will be useful for their design and analysis, provided a suitable nonlinear analysis is available to determine the diode waveforms.

Temperature dependent current transport of Pd/ZnO nanowire Schottky diodes

NASA Astrophysics Data System (ADS)

Gayen, R. N.; Bhattacharyya, S. R.; Jana, P.

2014-09-01

Zinc oxide (ZnO) nanowire based Schottky barrier diodes are fabricated by depositing Pd metal contact on top of vertically well-aligned ZnO nanowire arrays. A vertical array of ZnO nanowires on indium tin oxide (ITO) coated glass substrates is synthesized by hybrid wet chemical route. Scanning electron microscopy (SEM), x-ray diffraction (XRD) and x-ray photoelectron spectroscopy (XPS) measurement confirm the formation of stoichiometric well-aligned hexagonal (h-ZnO) nanowire arrays with wurtzite structure. Temperature dependent current-voltage (I-V) measurements on palladium-ZnO (Pd/ZnO) nanowire Schottky junctions in the temperature range 303-383 K exhibit excellent rectifying character. From these nonlinear I-V plots, different electrical parameters of diode-like reverse saturation current, barrier height and ideality factor are determined as a function of temperature assuming pure thermionic emission model. The ideality factor is found to decrease while the barrier height increases with the increase in temperature. The series resistance values calculated from Cheung’s functions also show temperature dependency. Such behavior can be attributed to the presence of defects that traps carriers, and barrier height inhomogeneity at the interface of the barrier junction. After barrier height inhomogeneity correction, considering a Gaussian distributed barrier height fluctuation across the Pd/ZnO interface, the estimated values of mean barrier height and modified Richardson constant are more closely matched to the theoretically predicted value for Pd/ZnO Schottky barrier diodes. The variation of density of interface states as a function of interface state energy is also calculated.

Modification of electrical properties of Au/n-type InP Schottky diode with a high-k Ba0.6Sr0.4TiO3 interlayer

NASA Astrophysics Data System (ADS)

Thapaswini, P. Prabhu; Padma, R.; Balaram, N.; Bindu, B.; Rajagopal Reddy, V.

2016-05-01

Au/Ba0.6Sr0.4TiO3 (BST)/n-InP metal/insulator/semiconductor (MIS) Schottky diodes have been analyzed by current-voltage (I-V) and capacitance-voltage (C-V) measurements. The surface morphology of the BST films on InP is fairly smooth. The Au/BST/n-InP MIS Schottky diode shows better rectification ratio and low leakage current compared to the conventional Au/n-InP metal-semiconductor (MS) Schottky diode. Higher barrier height is achieved for the MIS Schottky diode compared to the MS Schottky diode. The Norde and Cheung's methods are employed to determine the barrier height, ideality factor and series resistance. The interface state density (NSS) is determined from the forward bias I-V data for both the MS and MIS Schottky diodes. Results reveal that the NSS of the MIS Schottky diode is lower than that of the MS Schottky diode. The Poole-Frenkel emission is found dominating the reverse current in both Au/n-InP MS and Au/BST/n-InP MIS Schottky diodes, indicating the presence of structural defects and trap levels in the dielectric film.

InGaAs/InP heteroepitaxial Schottky barrier diodes for terahertz applications

NASA Technical Reports Server (NTRS)

Bhapkar, Udayan V.; Li, Yongjun; Mattauch, Robert J.

1992-01-01

This paper explores the feasibility of planar, sub-harmonically pumped, anti-parallel InGaAs/InP heteroepitaxial Schottky diodes for terahertz applications. We present calculations of the (I-V) characteristics of such diodes using a numerical model that considers tunneling. We also present noise and conversion loss predictions of diode mixers operated at 500 GHz, and obtained from a multi-port mixer analysis, using the I-V characteristics predicted by our model. Our calculations indicate that InGaAs/InP heteroepitaxial Schottky barrier diodes are expected to have an I-V characteristic with an ideality factor comparable to that of GaAs Schottky diodes. However, the reverse saturation current of InGaAs/InP diodes is expected to be much greater than that of GaAs diodes. These predictions are confirmed by experiment. The mixer analyses predict that sub-harmonically pumped anti-parallel InGaAs/InP diode mixers are expected to offer a 2 dB greater conversion loss and a somewhat higher single sideband noise temperature than their GaAs counterparts. More importantly, the InGaAs/InP devices are predicted to require only one-tenth of the local oscillator power required by similar GaAs diodes.

Temperature Dependence Of Current-Voltage Characteristics Of Au/p-GaAsN Schottky Barrier Diodes, With Small N Content

NASA Astrophysics Data System (ADS)

Rangel-Kuoppa, Victor-Tapio; Reentilä, Outi; Sopanen, Markku; Lipsanen, Harri

2011-12-01

The temperature dependent current-voltage (IVT) measurements on Au Schottky barrier diodes made on intrinsically p-type GaAs1-xNx were carried out. Three samples with small N content (x = 0.5%, 0.7% and 1%) were studied. The temperature range was 10-320 K. All contacts were found to be of Schottky type. The ideality factor and the apparent barrier height calculated by using thermionic emission (TE) theory show a strong temperature dependence. The current voltage (IV) curves are fitted based on the TE theory, yielding a zero-bias carrier height (ΦB0) and a ideality factor (n) that decrease and increase with decreasing temperature, respectively. The linear fitting of ΦB0 vs n and its subsequent evaluation for n = 1 give a zero-bias ΦB0 in the order of 0.35-0.4 eV. From the reverse-bias IV study, it is found that the experimental carrier density (NA) values increase with increasing temperature and are in agreement with the intrinsic carrier concentration for GaAs.

Modeling of Schottky barrier diode characteristics on heteroepitaxial β-gallium oxide thin films

NASA Astrophysics Data System (ADS)

Splith, Daniel; Müller, Stefan; von Wenckstern, Holger; Grundmann, Marius

2018-02-01

When investigating Schottky contacts on heteroepitaxial β-Ga2O3 thin films, several non-idealities are observed in the current voltage characteristics, which cannot be accounted for with the standard diode current models. In this article, we therefore employed a model for the rigorous calculation of the diode currents in order to understand the origin of this non-idealities. Using the model and a few parameters determined from the measurements, we were able to simulate the characteristics with good agreement to the measured data for temperatures between 30 °C and 150 °C. Fitting of the simulated curves to the measured curves allows a deeper insight into the microscopic origins of said non-idealities.

Annealing dependence on flexible p-CuGaO2/n-ZnO heterojunction diode deposited by RF sputtering method

NASA Astrophysics Data System (ADS)

Li Lam, Mui; Hafiz Abu Bakar, Muhammad; Lam, Wai Yip; Alias, Afishah; Rahman, Abu Bakar Abd; Anuar Mohamad, Khairul; Uesugi, Katsuhiro

2017-11-01

In this work, p-CuGaO2/n-ZnO heterojunction diodes were deposited by RF powered sputtering method on polyethylene terephthalate (PETP, PET) substrates. Structural, morphology, optical and electrical properties of CuGaO2/ZnO heterojunction was investigated as a function of annealing duration. The structural properties show the ZnO films (002) peak were stronger at the range of 34° while CuGaO2 (015) peak is not visible at 44°. The surface morphology revealed that RMS roughness become smoother as the annealing duration increase to 30 minutes and become rougher as the annealing duration is increased to 60 minutes. The optical properties of CuGaO2/ZnO heterojunction diode at 30 minutes exhibit approximately 75% optical transmittance in the invisible region. The diodes exhibited a rectifying characteristic and the maximum forward current was observed for the diode annealed for 30 minutes. The diodes show an ideality factor range from 43.69 to 71.29 and turn on voltage between 0.75 V and 1.05 V.

Heterojunction p-Cu2O/n-Ga2O3 diode with high breakdown voltage

NASA Astrophysics Data System (ADS)

Watahiki, Tatsuro; Yuda, Yohei; Furukawa, Akihiko; Yamamuka, Mikio; Takiguchi, Yuki; Miyajima, Shinsuke

2017-11-01

Heterojunction p-Cu2O/n-β-Ga2O3 diodes were fabricated on an epitaxially grown β-Ga2O3(001) layer. The reverse breakdown voltage of these p-n diodes reached 1.49 kV with a specific on-resistance of 8.2 mΩ cm2. The leakage current of the p-n diodes was lower than that of the Schottky barrier diode due to the higher barrier height against the electron. The ideality factor of the p-n diode was 1.31. It indicated that some portion of the recombination current at the interface contributed to the forward current, but the diffusion current was the dominant. The forward current more than 100 A/cm2 indicated the lower conduction band offset at the hetero-interface between Cu2O and Ga2O3 layers than that predicted from the bulk properties, resulting in such a high forward current without limitation. These results open the possibility of advanced device structures for wide bandgap Ga2O3 to achieve higher breakdown voltage and lower on-resistance.

Temperature dependent I-V characteristics of an Au/n-GaAs Schottky diode analyzed using Tung’s model

NASA Astrophysics Data System (ADS)

Korucu, Demet; Turut, Abdulmecit; Efeoglu, Hasan

2013-04-01

The current-voltage (I-V) characteristics of Au/n-GaAs contacts prepared with photolithography technique have been measured in the temperature range of 80-320 K. The ideality factor and barrier height (BH) values have remained almost unchanged between 1.04 and 1.10 and at a value of about 0.79 eV at temperatures above 200 K, respectively. Therefore, the ideality factor values near unity say that the experimental I-V data are almost independent of the sample temperature, that is, contacts have shown excellent Schottky diode behavior above 200 K. An abnormal decrease in the experimental BH Φb and an increase in the ideality factor with a decrease in temperature have been observed below 200 K. This behavior has been attributed to the barrier inhomogeneity by assuming a Gaussian distribution of nanometer-sized patches with low BH at the metal-semiconductor interface. The barrier inhomogeneity assumption is also confirmed by the linear relationship between the BH and the ideality factor. According to Tung’s barrier inhomogeneity model, it has been seen that the value of σT=7.41×10-5 cm2/3 V1/3from ideality factor versus (kT)-1 curve is in close agreement with σT=7.95×10-5 cm2/3 V1/3 value from the Φeff versus (2kT)-1 curve in the range of 80-200 K. The modified Richardson ln(J0/T2)-(qσT)2(Vb/η)2/3/[2(kT)2] versus (kT)-1 plot, from Tung’s Model, has given a Richardson constant value of 8.47 A cm-2 K-2which is in very close agreement with the known value of 8.16 A cm-2 K-2 for n-type GaAs; considering the effective patch area which is significantly lower than the entire geometric area of the Schottky contact, in temperature range of 80-200 K. Thus, it has been concluded that the use of Tung’s lateral inhomogeneity model is more appropriate to interpret the temperature-dependent I-V characteristics in the Schottky contacts.

Combined electrical and resonant optical excitation characterization of multi-quantum well InGaN-based light-emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Presa, S., E-mail: silvino.presa@tyndall.ie; School of Engineering, University College Cork, Cork; Maaskant, P. P.

We present a comprehensive study of the emission spectra and electrical characteristics of InGaN/GaN multi-quantum well light-emitting diode (LED) structures under resonant optical pumping and varying electrical bias. A 5 quantum well LED with a thin well (1.5 nm) and a relatively thick barrier (6.6 nm) shows strong bias-dependent properties in the emission spectra, poor photovoltaic carrier escape under forward bias and an increase in effective resistance when compared with a 10 quantum well LED with a thin (4 nm) barrier. These properties are due to a strong piezoelectric field in the well and associated reduced field in the thickermore » barrier. We compare the voltage ideality factors for the LEDs under electrical injection, light emission with current, photovoltaic mode (PV) and photoluminescence (PL) emission. The PV and PL methods provide similar values for the ideality which are lower than for the resistance-limited electrical method. Under optical pumping the presence of an n-type InGaN underlayer in a commercial LED sample is shown to act as a second photovoltaic source reducing the photovoltage and the extracted ideality factor to less than 1. The use of photovoltaic measurements together with bias-dependent spectrally resolved luminescence is a powerful method to provide valuable insights into the dynamics of GaN LEDs.« less

Temperature dependence of current-and capacitance-voltage characteristics of an Au/4H-SiC Schottky diode

NASA Astrophysics Data System (ADS)

Gülnahar, Murat

2014-12-01

In this study, the current-voltage (I-V) and capacitance-voltage (C-V) measurements of an Au/4H-SiC Schottky diode are characterized as a function of the temperature in 50-300 K temperature range. The experimental parameters such as ideality factor and apparent barrier height presents to be strongly temperature dependent, that is, the ideality factor increases and the apparent barrier height decreases with decreasing temperature, whereas the barrier height values increase with the temperature for C-V data. Likewise, the Richardson plot deviates at low temperatures. These anomaly behaviors observed for Au/4H-SiC are attributed to Schottky barrier inhomogeneities. The barrier anomaly which relates to interface of Au/4H-SiC is also confirmed by the C-V measurements versus the frequency measured in 300 K and it is interpreted by both Tung's lateral inhomogeneity model and multi-Gaussian distribution approach. The values of the weighting coefficients, standard deviations and mean barrier height are calculated for each distribution region of Au/4H-SiC using the multi-Gaussian distribution approach. In addition, the total effective area of the patches NAe is obtained at separate temperatures and as a result, it is expressed that the low barrier regions influence meaningfully to the current transport at the junction. The homogeneous barrier height value is calculated from the correlation between the ideality factor and barrier height and it is noted that the values of standard deviation from ideality factor versus q/3kT curve are in close agreement with the values obtained from the barrier height versus q/2kT variation. As a result, it can be concluded that the temperature dependent electrical characteristics of Au/4H-SiC can be successfully commented on the basis of the thermionic emission theory with both models.

Comparison of nickel, cobalt, palladium, and tungsten Schottky contacts on n-4H-silicon carbide

NASA Astrophysics Data System (ADS)

Gora, V. E.; Chawanda, A.; Nyamhere, C.; Auret, F. D.; Mazunga, F.; Jaure, T.; Chibaya, B.; Omotoso, E.; Danga, H. T.; Tunhuma, S. M.

2018-04-01

We have investigated the current-voltage (I-V) characteristics of nickel (Ni), cobalt (Co), tungsten (W) and palladium (Pd) Schottky contacts on n-type 4H-SiC in the 300-800 K temperature range. Results extracted from I-V measurements of Schottky barrier diodes showed that barrier height (ФBo) and ideality factor (n) were strongly dependent on temperature. Schottky barrier heights for contacts of all the metals showed an increase with temperature between 300 K and 800 K. This was attributed to barrier inhomogeneities at the interface between the metal and the semiconductor, which resulted in a distribution of barrier heights at the interface. Ideality factors of Ni, Co and Pd decreased from 1.6 to 1.0 and for W the ideality factor decreased from 1.1 to 1.0 when the temperature was increased from 300 K to 800 K respectively. The device parameters were compared to assess advantages and disadvantages of the metals for envisaged applications.

Electrical Investigation of Nanostructured Fe2O3/p-Si Heterojunction Diode Fabricated Using the Sol-Gel Technique

NASA Astrophysics Data System (ADS)

Mansour, Shehab A.; Ibrahim, Mervat M.

2017-11-01

Iron oxide (α-Fe2O3) nanocrystals have been synthesized via the sol-gel technique. The structural and morphological features of these nanocrystals were studied using x-ray diffraction, Fourier transform-infrared spectroscopy and transmission electron microscopy. Colloidal solution of synthesized α-Fe2O3 (hematite) was spin-coated onto a single-crystal p-type silicon (p-Si) wafer to fabricate a heterojunction diode with Mansourconfiguration Ag/Fe2O3/p-Si/Al. This diode was electrically characterized at room temperature using current-voltage (I-V) characteristics in the voltage range from -9 V to +9 V. The fabricated diode showed a good rectification behavior with a rectification factor 1.115 × 102 at 6 V. The junction parameters such as ideality factor, barrier height, series resistance and shunt resistance are determined using conventional I-V characteristics. For low forward voltage, the conduction mechanism is dominated by the defect-assisted tunneling process with conventional electron-hole recombination. However, at higher voltage, I-V ohmic and space charge-limited current conduction was became less effective with the contribution of the trapped-charge-limited current at the highest voltage range.

The determination of modified barrier heights in Ti/GaN nano-Schottky diodes at high temperature.

PubMed

Lee, Seung-Yong; Kim, Tae-Hong; Chol, Nam-Kyu; Seong, Han-Kyu; Choi, Heon-Jin; Ahn, Byung-Guk; Lee, Sang-Kwon

2008-10-01

We have investigated the size-effect of the nano-Schottky diodes on the electrical transport properties and the temperature-dependent current transport mechanism in a metal-semiconductor nanowire junction (a Ti/GaN nano-Schottky diode) using current-voltage characterization in the range of 300-423 K. We found that the modified mean Schottky barrier height (SBH) was approximately 0.7 eV with a standard deviation of approximately 0.14 V using a Gaussian distribution model of the barrier heights. The slightly high value of the modified mean SBH (approximately 0.11 eV) compared to the results from the thin-film based Ti/GaN Schottky diodes could be due to an additional oxide layer at the interface between the Ti and GaN nanowires. Moreover, we found that the abnormal behavior of the barrier heights and the ideality factors in a Ti/GaN nano-Schottky diode at a temperature below 423 K could be explained by a combination of the enhancement of the tunneling current and a model with a Gaussian distribution of the barrier heights.

Investigating and Optimizing Carrier Transport, Carrier Distribution, and Efficiency Droop in GaN-based Light-emitting Diodes

NASA Astrophysics Data System (ADS)

Zhu, Di

2011-12-01

The recent tremendous boost in the number and diversity of applications for light-emitting diodes (LEDs) indicates the emergence of the next-generation lighting and illumination technology. The rapidly improving LED technology is becoming increasingly viable especially for high-power applications. However, the greatest roadblock before finally breaching the main defensive position of conventional fluorescent and incandescent lamps still remains: GaN-based LEDs encounter a significant decrease in efficiency as the drive current increases, and this phenomenon is known as the efficiency droop. This dissertation focuses on uncovering the physical cause of efficiency droop in GaN-based LEDs and looks for solutions to it. GaN-based multiple-quantum-well (MQW) LEDs usually have abnormally high diode-ideality factors. Investigating the origin of the high diode-ideality factors could help to better understand the carrier transport in the LED MQW active region. We investigate the ideality factors of GaInN LEDs with different numbers of doped quantum barriers (QBs). Consistent with the theory, a decrease of the ideality factor as well as a reduction in forward voltage is found with increasing number of doped QBs. Experimental and simulation results indicate that the band profiles of QBs in the active region have a significant impact on the carrier transport mechanism, and the unipolar heterojunctions inside the active region play an important role in determining the diode-ideality factor. This dissertation will discuss several mechanisms leading to electron leakage which could be responsible for the efficiency droop. We show that the inefficient electron capture, the electron-attracting properties of polarized EBL, the inherent asymmetry in electron and hole transport and the inefficient EBL p-doping at high Al contents severely limit the ability to confine electrons to the MQWs. We demonstrate GaInN LEDs employing tailored Si doping in the QBs with strongly enhanced high-current efficiency and reduced efficiency droop. Compared with 4-QB-doped LEDs, 1-QB-doped LEDs show a 37.5% increase in light-output power at high currents. Consistent with the measurements, simulation shows a shift of radiative recombination among the MQWs and a reduced electron leakage current into the p-type GaN when fewer QBs are doped. The results can be attributed to a more symmetric carrier transport and uniform carrier distribution which help to reduce electron leakage and thus reduce the efficiency droop. In this dissertation, artificial evolution is introduced to the LED optimization process which combines a genetic algorithm (GA) and device-simulation software. We show that this approach is capable of generating novel concepts in designing and optimizing LED devices. Application of the GA to the QB-doping in the MQWs yields optimized structures which is consistent with the tailored QB doping experiments. Application of the GA to the EBL region suggests a novel structure with an inverted sheet charge at the spacer-EBL interface. The resulting repulsion of electrons can significantly reduce electron leakage and enhance the efficiency. Finally, dual-wavelength LEDs, which have two types of quantum wells (QWs) emitting at two different wavelengths, are experimentally characterized and compared with numerical simulations. These dual-wavelength LEDs allow us to determine which QW emits most of the light. An experimental observation and a quantitative analysis of the radiative recombination shift within the MQW active region are obtained. In addition, an injection-current dependence of the radiative recombination shift is predicted by numerical simulations and indeed observed in dual-wavelength LEDs. This injection-current dependence of the radiative recombination distribution can be explained very well by incorporating quantum-mechanical tunneling of carriers into and through the QBs into to the classical drift-diffusion model. In summary, using the LEDs with tailored QB doping and dual-wavelength LEDs, we investigate the origin of the high diode-ideality factor of LEDs and gain insight on the control of carrier transport, carrier distribution, and radiative recombination in the LED MQW active region. Our results provide solid evidence on the effectiveness of the GA in the LED device optimization process. In addition, the innovative EBL structure optimized by the GA sheds light on further paths for the optimization of LED design. Our results are the starting point of applying artificial evolution to practical semiconductor devices, opening new perspectives for complex semiconductor device optimization and enabling breakthroughs in high-performance LED design.

Effects of deposition temperature on the electrical properties of Ti/SiC Schottky barrier diodes

NASA Astrophysics Data System (ADS)

Oder, Tom N.; Kundeti, Krishna C.; Borucki, Nicholas; Isukapati, Sundar B.

2017-12-01

Ti Schottky contacts were deposited on n-type 4H-SiC at different temperatures ranging from 28 oC to 900 oC using a magnetron sputtering deposition system to fabricate Schottky barrier diodes. Post deposition annealing at 500 oC for up to 60 hours in vacuum was carried to further improve the contact properties. Optimum barrier height of 1.13 eV and ideality factor of 1.04 was obtained in contacts deposited at 200 oC and annealed for 60 hours. Under a reverse voltage bias of 400 V, the average leakage current on these set of diodes was 6.6 x 10-8 A. Based on the x-ray diffraction analysis, TiC, Ti5Si3 and Ti3SiC2 were formed at the Ti/SiC interface. These results could be beneficial to improving the performance of 4H-SiC Schottky diodes for high power and high temperature applications.

Transparent CH{sub 3}NH{sub 3}SnCl{sub 3}/Al-ZnO p-n heterojunction diode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kumar, Sunil, E-mail: skbgudha@gmail.com; Ansari, Mohd Zubair; Khare, Neeraj

2016-05-23

A p-type Organic inorganic tin chloride (CH{sub 3}NH{sub 3}SnCl{sub 3}) perovskite thin film has been synthesized by solution method. An n-type 1% Al doped ZnO (AZO) film has been deposited on FTO substrate by ultrasonic assisted chemical vapor deposition technique. A transparent CH{sub 3}NH{sub 3}SnCl{sub 3}/AZO p-n heterojunction diode has been fabricated by spin coating technique. CH{sub 3}NH{sub 3}SnCl{sub 3}/AZO p-n heterojunction shows 75% transparency in the visible region. I-V characteristic of CH{sub 3}NH{sub 3}SnCl{sub 3}/AZO p-n heterojunction shows rectifying behavior of the diode. The diode parameters calculated as ideality factor η=2.754 and barrier height Φ= 0.76 eV. The resultmore » demonstrates the potentiality of CH{sub 3}NH{sub 3}SnCl{sub 3}/AZO p-n heterojunction for transparent electronics.« less

Coupling Two-Dimensional MoTe2 and InGaZnO Thin-Film Materials for Hybrid PN Junction and CMOS Inverters.

PubMed

Lee, Han Sol; Choi, Kyunghee; Kim, Jin Sung; Yu, Sanghyuck; Ko, Kyeong Rok; Im, Seongil

2017-05-10

We report the fabrication of hybrid PN junction diode and complementary (CMOS) inverters, where 2D p-type MoTe 2 and n-type thin film InGaZnO (IGZO) are coupled for each device process. IGZO thin film was initially patterned by conventional photolithography either for n-type material in a PN diode or for n-channel of top-gate field-effect transistors (FET) in CMOS inverter. The hybrid PN junction diode shows a good ideality factor of 1.57 and quite a high ON/OFF rectification ratio of ∼3 × 10 4 . Under photons, our hybrid PN diode appeared somewhat stable only responding to high-energy photons of blue and ultraviolet. Our 2D nanosheet-oxide film hybrid CMOS inverter exhibits voltage gains as high as ∼40 at 5 V, low power consumption less than around a few nW at 1 V, and ∼200 μs switching dynamics.

Enhanced Thermionic Emission and Low 1/f Noise in Exfoliated Graphene/GaN Schottky Barrier Diode.

PubMed

Kumar, Ashutosh; Kashid, Ranjit; Ghosh, Arindam; Kumar, Vikram; Singh, Rajendra

2016-03-01

Temperature-dependent electrical transport characteristics of exfoliated graphene/GaN Schottky diodes are investigated and compared with conventional Ni/GaN Schottky diodes. The ideality factor of graphene/GaN and Ni/GaN diodes are measured to be 1.33 and 1.51, respectively, which is suggestive of comparatively higher thermionic emission current in graphene/GaN diode. The barrier height values for graphene/GaN diode obtained using thermionic emission model and Richardson plots are found to be 0.60 and 0.72 eV, respectively, which are higher than predicted barrier height ∼0.40 eV as per the Schottky-Mott model. The higher barrier height is attributed to hole doping of graphene due to graphene-Au interaction which shifts the Fermi level in graphene by ∼0.3 eV. The magnitude of flicker noise of graphene/GaN Schottky diode increases up to 175 K followed by its decrease at higher temperatures. This indicates that diffusion currents and barrier inhomogeneities dominate the electronic transport at lower and higher temperatures, respectively. The exfoliated graphene/GaN diode is found to have lower level of barrier inhomogeneities than conventional Ni/GaN diode, as well as earlier reported graphene/GaN diode fabricated using chemical vapor deposited graphene. The lesser barrier inhomogeneities in graphene/GaN diode results in lower flicker noise by 2 orders of magnitude as compared to Ni/GaN diode. Enhanced thermionic emission current, lower level of inhomogeneities, and reduced flicker noise suggests that graphene-GaN Schottky diodes may have the underlying trend for replacing metal-GaN Schottky diodes.

CURRENT-VOLTAGE CHARACTERISTICS OF THERMALLY ANNEALED Ni/n-GaAs SCHOTTKY CONTACTS

NASA Astrophysics Data System (ADS)

Yildirim, Nezir; Turut, Abdulmecit; Dogan, Hulya

The Schottky barrier type Ni/n-GaAs contacts fabricated by us were thermally annealed at 600∘C and 700∘C for 1min. The apparent barrier height Φap and ideality factor of the diodes were calculated from the forward bias current-voltage characteristic in 60-320K range. The Φap values for the nonannealed and 600∘C and 700∘C annealed diodes were obtained as 0.80, 0.81 and 0.67eV at 300K, respectively. Thus, it has been concluded that the reduced barrier due to the thermal annealing at 700∘C promises some device applications. The current preferentially flows through the lowest barrier height (BH) with the temperature due to the BH inhomogeneities. Therefore, it was seen that the Φap versus (2kT)‑1 plots for the nonannealed and annealed diodes showed the linear behavior according to Gaussian distributions.

Growth and Characterization of CuO Nanostructures on Si for the Fabrication of CuO/p-Si Schottky Diodes

PubMed Central

Çetinkaya, S.; Çetinkara, H. A.; Bayansal, F.; Kahraman, S.

2013-01-01

CuO interlayers in the CuO/p-Si Schottky diodes were fabricated by using CBD and sol-gel methods. Deposited CuO layers were characterized by SEM and XRD techniques. From the SEM images, it was seen that the film grown by CBD method is denser than the film grown by sol-gel method. This result is compatible with XRD results which show that the crystallization in CBD method is higher than it is in sol-gel method. For the electrical investigations, current-voltage characteristics of the diodes have been studied at room temperature. Conventional I-V and Norde's methods were used in order to determine the ideality factor, barrier height, and series resistance values. It was seen that the morphological and structural analysis are compatible with the results of electrical investigations. PMID:23766670

Understanding Pt-ZnO:In Schottky nanocontacts by conductive atomic force microscopy

NASA Astrophysics Data System (ADS)

Chirakkara, Saraswathi; Choudhury, Palash Roy; Nanda, K. K.; Krupanidhi, S. B.

2016-04-01

Undoped and In doped ZnO (IZO) thin films are grown on Pt coated silicon substrates Pt/Si by pulsed laser deposition to fabricate Pt/ZnO:In Schottky diodes. The Schottky diodes were investigated by conventional two-probe current-voltage (I-V) measurements and by the I-V spectroscopy tool of conductive atomic force microscopy (C-AFM). The large deviation of the ideality factor from unity and the temperature dependent Schottky barrier heights (SBHs) obtained from the conventional method imply the presence of inhomogeneous interfaces. The inhomogeneity of SBHs is confirmed by C-AFM. Interestingly, the I-V curves at different points are found to be different, and the SBHs deduced from the point diodes reveal inhomogeneity at the nanoscale at the metal-semiconductor interface. A reduction in SBH and turn-on voltage along with enhancement in forward current are observed with increasing indium concentration.

Simplified and quick electrical modeling for dye sensitized solar cells: An experimental and theoretical investigation

NASA Astrophysics Data System (ADS)

de Andrade, Rocelito Lopes; de Oliveira, Matheus Costa; Kohlrausch, Emerson Cristofer; Santos, Marcos José Leite

2018-05-01

This work presents a new and simple method for determining IPH (current source dependent on luminance), I0 (reverse saturation current), n (ideality factor), RP and RS, (parallel and series resistance) to build an electrical model for dye sensitized solar cells (DSSCs). The electrical circuit parameters used in the simulation and to generate theoretical curves for the single diode electrical model were extracted from I-V curves of assembled DSSCs. Model validation was performed by assembling five different types of DSSCs and evaluating the following parameters: effect of a TiO2 blocking/adhesive layer, thickness of the TiO2 layer and the presence of a light scattering layer. In addition, irradiance, temperature, series and parallel resistance, ideality factor and reverse saturation current were simulated.

Effects of Parasitic Reactance on Lattice Circuit Slotline Switch

NASA Technical Reports Server (NTRS)

Ponchak, George E.

2016-01-01

A slotline lattice switch has recently been proposed and demonstrated. In that paper, ideal diode characteristics were assumed. In this paper, the effects of parasitic reactances, due to the diode and the wire bonds that connect it to the circuit, are investigated. The switch is compared to a traditional slotline switch with a single diode across the slot.

Development and fabrication of improved Schottky power diodes, phases I and II

NASA Technical Reports Server (NTRS)

Cordes, L. F.; Garfinkle, M.; Taft, E. A.

1974-01-01

Reproducible methods for the fabrication of silicon Schottky diodes were developed for the metals tungsten, aluminum, conventional platinum silicide and low temperature platinum silicide. Barrier heights and barrier lowering were measured permitting the accurate prediction of ideal forward and reverse diode performance. Processing procedures were developed which permit the fabrication of large area (approximately 1 sqcm) mesa-geometry power Schottky diodes with forward and reverse characteristics that approach theoretical values.

The optical characterization of organometallic complex thin films by spectroscopic ellipsometry and photovoltaic diode application

DOE Office of Scientific and Technical Information (OSTI.GOV)

Özaydın, C.; Güllü, Ö., E-mail: omergullu@gmail.com; Pakma, O.

2016-05-15

Highlights: • Optical properties and thickness of the A novel organometallic complex (OMC) film were investigated by spectroscopic ellipsometry (SE). • Au/OMC/n-Si metal/interlayer/semiconductor (MIS) diode has been fabricated • This paper presents the I–V analysis of Au/OMC/n-Si MIS diode. • Current–voltage and photovoltaic properties of the diode were investigated. - Abstract: In this work, organometallic complex (OMC) films have been deposited onto glass or silicon substrates by spin coating technique and their photovoltaic application potential has been investigated. Optical properties and thickness of the film have been investigated by spectroscopic ellipsometry (SE). Also, transmittance spectrum has been taken by UV/vismore » spectrophotometer. The optical method has been used to determine the band gap value of the films. Also, Au/OMC/n-Si metal/interlayer/semiconductor (MIS) diode has been fabricated. Current–voltage and photovoltaic properties of the structure were investigated. The ideality factor (n) and barrier height (Φ{sub b}) values of the diode were found to be 2.89 and 0.79 eV, respectively. The device shows photovoltaic behavior with a maximum open-circuit voltage of 396 mV and a short circuit current of 33.8 μA under 300 W light.« less

A transparent diode with high rectifying ratio using amorphous indium-gallium-zinc oxide/SiN{sub x} coupled junction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Choi, Myung-Jea; Kim, Myeong-Ho; Choi, Duck-Kyun, E-mail: duck@hanyang.ac.kr

2015-08-03

We introduce a transparent diode that shows both high rectifying ratio and low leakage current at process temperature below 250 °C. This device is clearly distinguished from all previous transparent diodes in that the rectifying behavior results from the junction between a semiconductor (amorphous indium-gallium-zinc oxide (a-IGZO)) and insulator (SiN{sub x}). We systematically study the properties of each junction within the device structure and demonstrate that the a-IGZO/SiN{sub x} junction is the source of the outstanding rectification. The electrical characteristics of this transparent diode are: 2.8 A/cm{sup 2} on-current density measured at −7 V; lower than 7.3 × 10{sup −9} A/cm{sup 2} off-currentmore » density; 2.53 ideality factor; and high rectifying ratio of 10{sup 8}–10{sup 9}. Furthermore, the diode structure has a transmittance of over 80% across the visible light range. The operating principle of the indium-tin oxide (ITO)/a-IGZO/SiN{sub x}/ITO device was examined with an aid of the energy band diagram and we propose a preliminary model for the rectifying behavior. Finally, we suggest further directions for research on this transparent diode.« less

Electrical and optical characteristics of n-Zno/p-GaN hetero-junction diode fabricated by ultra-high vacuum sputter.

PubMed

Cho, Seong Gook; Lee, Dong Uk; Kim, Eun Kyu

2013-09-01

We investigated the electrical and optical properties of n-ZnO/p-GaN hetero-junction diode fabricated by an ultra-high vacuum radio frequency magnetron sputter. A physical relationship between the rotation rate during deposition process and post annealing conditions after deposited ZnO layer on p-GaN layer was discussed. When the rotation rates during deposition process of n-ZnO layer were 5 rpm and 15 rpm, the full width at half maximum of photoluminescence spectra of ZnO layer on the p-GaN layer was about 106 and 133 meV, respectively. Also, the ratio of deep level emission to near band edge emission was dramatically increased as increasing the rotation rate from 5 to 15 rpm. The n-ZnO/p-GaN hetero-junction diode grown at 5 rpm has a higher ratio of forward to reverse currents than the diode grown at 15 rpm. Also, the 600 degrees C-annealed diodes with 5 rpm showed good rectifying behavior with the barrier height of 0.74 eV, the ideality factor of 12.2, and the forward to reverse current ratio of 614 at +/- 8 V.

Flexible amorphous silicon PIN diode x-ray detectors

NASA Astrophysics Data System (ADS)

Marrs, Michael; Bawolek, Edward; Smith, Joseph T.; Raupp, Gregory B.; Morton, David

2013-05-01

A low temperature amorphous silicon (a-Si) thin film transistor (TFT) and amorphous silicon PIN photodiode technology for flexible passive pixel detector arrays has been developed using active matrix display technology. The flexible detector arrays can be conformed to non-planar surfaces with the potential to detect x-rays or other radiation with an appropriate conversion layer. The thin, lightweight, and robust backplanes may enable the use of highly portable x-ray detectors for use in the battlefield or in remote locations. We have fabricated detector arrays up to 200 millimeters along the diagonal on a Gen II (370 mm x 470 mm rectangular substrate) using plasma enhanced chemical vapor deposition (PECVD) a-Si as the active layer and PECVD silicon nitride (SiN) as the gate dielectric and passivation. The a-Si based TFTs exhibited an effective saturation mobility of 0.7 cm2/V-s, which is adequate for most sensing applications. The PIN diode material was fabricated using a low stress amorphous silicon (a-Si) PECVD process. The PIN diode dark current was 1.7 pA/mm2, the diode ideality factor was 1.36, and the diode fill factor was 0.73. We report on the critical steps in the evolution of the backplane process from qualification of the low temperature (180°C) TFT and PIN diode process on the 150 mm pilot line, the transfer of the process to flexible plastic substrates, and finally a discussion and demonstration of the scale-up to the Gen II (370 x 470 mm) panel scale pilot line.

New approach to the design of Schottky barrier diodes for THz mixers

NASA Technical Reports Server (NTRS)

Jelenski, A.; Grueb, A.; Krozer, V.; Hartnagel, H. L.

1992-01-01

Near-ideal GaAs Schottky barrier diodes especially designed for mixing applications in the THz frequency range are presented. A diode fabrication process for submicron diodes with near-ideal electrical and noise characteristics is described. This process is based on the electrolytic pulse etching of GaAs in combination with an in-situ platinum plating for the formation of the Schottky contacts. Schottky barrier diodes with a diameter of 1 micron fabricated by the process have already shown excellent results in a 650 GHz waveguide mixer at room temperature. A conversion loss of 7.5 dB and a mixer noise temperature of less than 2000 K have been obtained at an intermediate frequency of 4 GHz. The optimization of the diode structure and the technology was possible due to the development of a generalized Schottky barrier diode model which is valid also at high current densities. The common diode design and optimization is discussed on the basis of the classical theory. However, the conventional fomulas are valid only in a limited forward bias range corresponding to currents much smaller than the operating currents under submillimeter mixing conditions. The generalized new model takes into account not only the phenomena occurring at the junction such as current dependent recombination and drift/diffusion velocities, but also mobility and electron temperature variations in the undepleted epi-layer. Calculated diode I/V and noise characteristics are in excellent agreement with the measured values. Thus, the model offers the possibility of optimizing the diode structure and predicting the diode performance under mixing conditions at THz frequencies.

A theoretical study on hot charge-transfer states and dimensional effects of organic photocells based on an ideal diode model.

PubMed

Shimazaki, Tomomi; Nakajima, Takahito

2017-05-21

This paper discusses an ideal diode model with hot charge-transfer (CT) states to analyze the power conversion efficiency of an organic photocell. A free carrier generation mechanism via sunlight in an organic photocell consists of four microscopic processes: photon absorption, exciton dissociation, CT, and charge separation. The hot CT state effect has been actively investigated to understand the charge separation process. We previously reported a theoretical method to calculate the efficiency of the charge separation process via a hot CT state (T. Shimazaki et al., Phys. Chem. Chem. Phys., 2015, 17, 12538 and J. Chem. Phys., 2016, 144, 234906). In this paper, we integrate the simulation method into the ideal photocell diode model and calculate several properties such as short circuit current, open circuit voltage, and power conversion efficiency. Our results highlight that utilizing the dimensional (entropy) effect together with the hot CT state can play an essential role in developing more efficient organic photocell devices.

Characterization of WB/SiC Schottky Barrier Diodes Using I-V-T Method

NASA Astrophysics Data System (ADS)

Aldridge, James; Oder, Tom

2009-04-01

The importance of silicon carbide (SiC) semiconductor for high temperature and high power microelectronic device applications has long been established. We have fabricated SiC Schottky barrier diodes using tungsten boride (WB) as the Schottky contact. The diodes were characterized using the current-voltage-temperature method. The sample was mounted on a heated stage and the temperature varied from about 25 ^oC to 300 ^oC at intervals of 25 ^oC. From the Richardson's plot, we obtained an energy barrier height of 0.96 eV and a Richardson's constant of 71.2 AK-1cm-2. Using the modified Richardson's plot, we obtained a barrier height of 1.01 eV. From the variation of the ideality factor and the temperature, we determined a characteristic energy of 0.02 eV to 0.04 eV across the range of the measurement temperature. This implies that thermionic emission is dominant in the low measurement temperature range. Our results confirm the excellent thermal stability of WB/SiC Schottky barrier diodes.

p-n Junction Diodes Fabricated on Si-Si/Ge Heteroepitaxial Films

NASA Technical Reports Server (NTRS)

Das, K.; Mazumder, M. D. A.; Hall, H.; Alterovitz, Samuel A. (Technical Monitor)

2000-01-01

A set of photolithographic masks was designed for the fabrication of diodes in the Si-Si/Ge material system. Fabrication was performed on samples obtained from two different wafers: (1) a complete HBT structure with an n (Si emitter), p (Si/Ge base), and an n/n+ (Si collector/sub-collector) deposited epitaxially (MBE) on a high resistivity p-Si substrate, (2) an HBT structure where epitaxial growth was terminated after the p-type base (Si/Ge) layer deposition. Two different process runs were attempted for the fabrication of Si-Si/Ge (n-p) and Si/Ge-Si (p-n) junction diodes formed between the emitter-base and base-collector layers, respectively, of the Si-Si/Ge-Si HBT structure. One of the processes employed a plasma etching step to expose the p-layer in the structure (1) and to expose the e-layer in structure (2). The Contact metallization used for these diodes was a Cu-based metallization scheme that was developed during the first year of the grant. The plasma-etched base-collector diodes on structure (2) exhibited well-behaved diode-like characteristics. However, the plasma-etched emitter-base diodes demonstrated back-to-back diode characteristics. These back-to back characteristics were probably due to complete etching of the base-layer, yielding a p-n-p diode. The deep implantation process yielded rectifying diodes with asymmetric forward and reverse characteristics. The ideality factor of these diodes were between 1.6 -2.1, indicating that the quality of the MBE grown epitaxial films was not sufficiently high, and also incomplete annealing of the implantation damage. Further study will be conducted on CVD grown films, which are expected to have higher epitaxial quality.

Employment of single-diode model to elucidate the variations in photovoltaic parameters under different electrical and thermal conditions

PubMed Central

Hameed, Shilan S.; Aziz, Fakhra; Sulaiman, Khaulah; Ahmad, Zubair

2017-01-01

In this research work, numerical simulations are performed to correlate the photovoltaic parameters with various internal and external factors influencing the performance of solar cells. Single-diode modeling approach is utilized for this purpose and theoretical investigations are compared with the reported experimental evidences for organic and inorganic solar cells at various electrical and thermal conditions. Electrical parameters include parasitic resistances (Rs and Rp) and ideality factor (n), while thermal parameters can be defined by the cells temperature (T). A comprehensive analysis concerning broad spectral variations in the short circuit current (Isc), open circuit voltage (Voc), fill factor (FF) and efficiency (η) is presented and discussed. It was generally concluded that there exists a good agreement between the simulated results and experimental findings. Nevertheless, the controversial consequence of temperature impact on the performance of organic solar cells necessitates the development of a complementary model which is capable of well simulating the temperature impact on these devices performance. PMID:28793325

Flexible IGZO Schottky diodes on paper

NASA Astrophysics Data System (ADS)

Kaczmarski, Jakub; Borysiewicz, Michał A.; Piskorski, Krzysztof; Wzorek, Marek; Kozubal, Maciej; Kamińska, Eliana

2018-01-01

With the development of novel device applications, e.g. in the field of robust and recyclable paper electronics, came an increased demand for the understanding and control of IGZO Schottky contact properties. In this work, a fabrication and characterization of flexible Ru-Si-O/IGZO Schottky barriers on paper is presented. It is found that an oxygen-rich atomic composition and microstructure of Ru-Si-O containing randomly oriented Ru inclusions with diameter of 3-5 nm embedded in an amorphous SiO2 matrix are effective in preventing interfacial reactions in the contact region, allowing to avoid pre-treatment of the semiconductor surface and fabricate reliable diodes at room temperature characterized by Schottky barrier height and ideality factor equal 0.79 eV and 2.13, respectively.

Electronic transport and Schottky barrier heights of p-type CuAlO2 Schottky diodes

NASA Astrophysics Data System (ADS)

Lin, Yow-Jon; Luo, Jie; Hung, Hao-Che

2013-05-01

A CuAlO2 Schottky diode was fabricated and investigated using current density-voltage (J-V) and capacitance-voltage (C-V) methods. It is shown that the barrier height (qϕB) determined from J-V measurements is lower than that determined from C-V measurements and qϕB determined from C-V measurements is close to the Schottky limit. This is due to a combined effect of the image-force lowering and tunneling. Time domain measurements provide evidence of the domination of electron trapping with long-second lifetime in CuAlO2. Carrier capture and emission from charge traps may lead to the increased probability of tunneling, increasing the ideality factor.

One-step direct transfer of pristine single-walled carbon nanotubes for functional nanoelectronics.

PubMed

Wu, Chung Chiang; Liu, Chang Hua; Zhong, Zhaohui

2010-03-10

We report a one-step direct transfer technique for the fabrication of functional nanoelectronic devices using pristine single-walled carbon nanotubes (SWNTs). Suspended SWNTs grown by the chemical vapor deposition (CVD) method are aligned and directly transferred onto prepatterned device electrodes at ambient temperature. Using this technique, we successfully fabricated SWNT electromechanical resonators with gate-tunable resonance frequencies. A fully suspended SWNT p-n diode has also been demonstrated with the diode ideality factor equal to 1. Our method eliminates the organic residues on SWNTs resulting from conventional lithography and solution processing. The results open up opportunities for the fundamental study of electron transport physics in ultraclean SWNTs and for room temperature fabrication of novel functional devices based on pristine SWNTs.

Nonpolar p-GaN/n-Si heterojunction diode characteristics: a comparison between ensemble and single nanowire devices

NASA Astrophysics Data System (ADS)

Patsha, Avinash; Pandian, Ramanathaswamy; Dhara, Sandip; Tyagi, A. K.

2015-10-01

The electrical and photodiode characteristics of ensemble and single p-GaN nanowire and n-Si heterojunction devices were studied. Ideality factor of the single nanowire p-GaN/n-Si device was found to be about three times lower compared to that of the ensemble nanowire device. Apart from the deep-level traps in p-GaN nanowires, defect states due to inhomogeneity in Mg dopants in the ensemble nanowire device are attributed to the origin of the high ideality factor. Photovoltaic mode of the ensemble nanowire device showed an improvement in the fill-factors up to 60% over the single nanowire device with fill-factors up to 30%. Responsivity of the single nanowire device in the photoconducting mode was found to be enhanced by five orders, at 470 nm. The enhanced photoresponse of the single nanowire device also confirms the photoconduction due to defect states in p-GaN nanowires.

Probing photo-carrier collection efficiencies of individual silicon nanowire diodes on a wafer substrate.

PubMed

Schmitt, S W; Brönstrup, G; Shalev, G; Srivastava, S K; Bashouti, M Y; Döhler, G H; Christiansen, S H

2014-07-21

Vertically aligned silicon nanowire (SiNW) diodes are promising candidates for the integration into various opto-electronic device concepts for e.g. sensing or solar energy conversion. Individual SiNW p-n diodes have intensively been studied, but to date an assessment of their device performance once integrated on a silicon substrate has not been made. We show that using a scanning electron microscope (SEM) equipped with a nano-manipulator and an optical fiber feed-through for tunable (wavelength, power using a tunable laser source) sample illumination, the dark and illuminated current-voltage (I-V) curve of individual SiNW diodes on the substrate wafer can be measured. Surprisingly, the I-V-curve of the serially coupled system composed of SiNW/wafers is accurately described by an equivalent circuit model of a single diode and diode parameters like series and shunting resistivity, diode ideality factor and photocurrent can be retrieved from a fit. We show that the photo-carrier collection efficiency (PCE) of the integrated diode illuminated with variable wavelength and intensity light directly gives insight into the quality of the device design at the nanoscale. We find that the PCE decreases for high light intensities and photocurrent densities, due to the fact that considerable amounts of photo-excited carriers generated within the substrate lead to a decrease in shunting resistivity of the SiNW diode and deteriorate its rectification. The PCE decreases systematically for smaller wavelengths of visible light, showing the possibility of monitoring the effectiveness of the SiNW device surface passivation using the shown measurement technique. The integrated device was pre-characterized using secondary ion mass spectrometry (SIMS), TCAD simulations and electron beam induced current (EBIC) measurements to validate the properties of the characterized material at the single SiNW diode level.

Experimental and computational investigation of graphene/SAMs/n-Si Schottky diodes

NASA Astrophysics Data System (ADS)

Aydin, H.; Bacaksiz, C.; Yagmurcukardes, N.; Karakaya, C.; Mermer, O.; Can, M.; Senger, R. T.; Sahin, H.; Selamet, Y.

2018-01-01

We have investigated the effect of two different self-assembled monolayers (SAMs) on electrical characteristics of bilayer graphene (BLG)/n-Si Schottky diodes. Novel 4″bis(diphenylamino)-1, 1‧:3″-terphenyl-5‧ carboxylic acids (TPA) and 4,4-di-9H-carbazol-9-yl-1,1‧:3‧1‧-terphenyl-5‧ carboxylic acid (CAR) aromatic SAMs have been used to modify n-Si surfaces. Cyclic voltammetry (CV) and Kelvin probe force microscopy (KPFM) results have been evaluated to verify the modification of n-Si surface. The current-voltage (I-V) characteristics of bare and SAMs modified devices show rectification behaviour verifying a Schottky junction at the interface. The ideality factors (n) from ln(I)-V dependences were determined as 2.13, 1.96 and 2.07 for BLG/n-Si, BLG/TPA/n-Si and BLG/CAR/n-Si Schottky diodes, respectively. In addition, Schottky barrier height (SBH) and series resistance (Rs) of SAMs modified diodes were decreased compared to bare diode due to the formation of a compatible interface between graphene and Si as well as π-π interaction between aromatic SAMs and graphene. The CAR-based device exhibits better diode characteristic compared to the TPA-based device. Computational simulations show that the BLG/CAR system exhibits smaller energy-level-differences than the BLG/TPA, which supports the experimental findings of a lower Schottky barrier and series resistance in BLG/CAR diode.

Low-frequency noise properties in Pt-indium gallium zinc oxide Schottky diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Jiawei; Zhang, Linqing; Ma, Xiaochen

2015-08-31

The low-frequency noise properties of Pt-indium gallium zinc oxide (IGZO) Schottky diodes at different forward biases are investigated. The IGZO layer and Pt contact were deposited by RF sputtering at room temperature. The diode showed an ideality factor of 1.2 and a barrier height of 0.94 eV. The current noise spectral density exhibited 1/f behavior at low frequencies. The analysis of the current dependency of the noise spectral density revealed that for the as-deposited diode, the noise followed Luo's mobility and diffusivity fluctuation model in the thermionic-emission-limited region and Hooge's empirical theory in the series-resistance-limited region. A low Hooge's constant ofmore » 1.4 × 10{sup −9} was found in the space-charge region. In the series-resistance-limited region, the Hooge's constant was 2.2 × 10{sup −5}. After annealing, the diode showed degradation in the electrical performance. The interface-trap-induced noise dominated the noise spectrum. By using the random walk model, the interface-trap density was obtained to be 3.6 × 10{sup 15 }eV{sup −1 }cm{sup −2}. This work provides a quantitative approach to analyze the properties of Pt-IGZO interfacial layers. These low noise properties are a prerequisite to the use of IGZO Schottky diodes in switch elements in memory devices, photosensors, and mixer diodes.« less

Temperature-Dependent Electrical Properties and Carrier Transport Mechanisms of TMAH-Treated Ni/Au/Al2O3/GaN MIS Diode

NASA Astrophysics Data System (ADS)

Reddy, M. Siva Pratap; Puneetha, Peddathimula; Reddy, V. Rajagopal; Lee, Jung-Hee; Jeong, Seong-Hoon; Park, Chinho

2016-11-01

The temperature-dependent electrical properties and carrier transport mechanisms of tetramethylammonium hydroxide (TMAH)-treated Ni/Au/Al2O3/GaN metal-insulator-semiconductor (MIS) diodes have been investigated by current-voltage ( I- V) and capacitance-voltage ( C- V) measurements. The experimental results reveal that the barrier height ( I- V) increases whereas the ideality factor decreases with increasing temperature. The TMAH-treated Ni/Au/Al2O3/GaN MIS diode showed nonideal behaviors which indicate the presence of a nonuniform distribution of interface states ( N SS) and effect of series resistance ( R S). The obtained R S and N SS were found to decrease with increasing temperature. Furthermore, it was found that different transport mechanisms dominated in the TMAH-treated Ni/Au/Al2O3/GaN MIS diode. At 150 K to 250 K, Poole-Frenkel emission (PFE) was found to be responsible for the reverse leakage, while Schottky emission (SE) was the dominant mechanism at high electric fields in the temperature range from 300 K to 400 K. Feasible energy band diagrams and possible carrier transport mechanisms for the TMAH-treated Ni/Au/Al2O3/GaN MIS diode are discussed based on PFE and SE.

Differential Depletion Capacitance Approximation Analysis Under DC Voltage for Air-Exposed Cu/n-Si Schottky Diodes

NASA Astrophysics Data System (ADS)

Korkut, A.

It is well known that the semiconductor surface is easily oxidized by air-media in time. This work studieds the characterization of Schottky diodes and changes in depletion capacitance, which is caused by air exposure of a group of Cu/n-Si/Al Schottky diodes. First, data for current-voltage and capacitance-voltage were a Ren, and then ideality factor, barrier height, built-in potential (Vbi), donor concentration and Fermi level, interfacial oxide thickness, interface state density were calculated. It is seen that depletion capacitance was calculate; whereafter built-in potential played an important role in Schottky diodes characteristic. Built-in potential directly affects the characteristic of Schottky diodes and a turning point occurs. In case of forward and reverse bias, depletion capacitance versus voltage graphics are matched, but in an opposite direction. In case of forward bias, differential depletion capacitance begins from minus values, it is raised to first Vbi, then reduced to second Vbi under the minus condition. And it sharply gones up to positive apex, then sharply falls down to near zero, but it takes positive values depending on DC voltage. In case of reverse bias, differential depletion capacitance takes to small positive values. In other respects, we see that depletion characteristics change considerably under DC voltage.

Modeling Emerging Solar Cell Materials and Devices

NASA Astrophysics Data System (ADS)

Thongprong, Non

Organic photovoltaics (OPVs) and perovskite solar cells are emerging classes of solar cell that are promising for clean energy alternatives to fossil fuels. Understanding fundamental physics of these materials is crucial for improving their energy conversion efficiencies and promoting them to practical applications. Current density-voltage (JV) curves; which are important indicators of OPV efficiency, have direct connections to many fundamental properties of solar cells. They can be described by the Shockley diode equation, resulting in fitting parameters; series and parallel resistance (Rs and Rp), diode saturation current ( J0) and ideality factor (n). However, the Shockley equation was developed specifically for inorganic p-n junction diodes, so it lacks physical meanings when it is applied to OPVs. Hence, the puRposes of this work are to understand the fundamental physics of OPVs and to develop new diode equations in the same form as the Shockley equation that are based on OPV physics. We develop a numerical drift-diffusion simulation model to study bilayer OPVs, which will be called the drift-diffusion for bilayer interface (DD-BI) model. The model solves Poisson, drift-diffusion and current-continuity equations self-consistently for charge densities and potential profiles of a bilayer device with an organic heterojunction interface described by the GWWF model. We also derive new diode equations that have JV curves consistent with the DD-BI model and thus will be called self-consistent diode (SCD) equations. Using the DD-BI and the SCD model allows us to understand working principles of bilayer OPVs and physical definitions of the Shockley parameters. Due to low carrier mobilities in OPVs, space charge accumulation is common especially near the interface and electrodes. Hence, quasi-Fermi levels (i.e. chemical potentials), which depend on charge densities, are modified around the interface, resulting in a splitting of quasi-Fermi levels that works as a driving potential for the heterojunction diode. This brings about the meaning of R s as the resistance that gives rise to the diode voltage equal to the interface quasi-Fermi level splitting instead of the voltage between the electrodes. Quasi-Fermi levels that drop near the electrodes because of unmatched electrode work functions or due to charge injection can also increase Rs. Furthermore, we are able to study dissociation and recombination rates of bound charge pairs across the interface (i.e. polaron pairs or PPs) and arrive at the physical meaning of Rp as recombination resistance of PPs. In the dark, PP density is very low, so Rp is possibly caused by a tunneling leakage current at the interface. Ideality factors are parameters that depend on the split of quasi-Fermi levels and the ratio of recombination rate to recombination rate at equilibrium. Even though they are related to trap characteristics as normally understood, their relations are complicated and careful inte Rpretations of fitted ideality factors are needed. Our models are successfully applied to actual devices, and useful physics can be deduced, for example differences between the Shockley parameters under dark and illumination conditions. Another puRpose of this thesis is to study electronic properties of CsSnBr3 perovskite and processes of growing the perovskite film using an epitaxy technique. Calculation results using density functional theory reveal that a CsSnBr3 film that is grown on a NaCl(100) substrate can undergo a phase transition to CsSn 2Br5, which is a wide-bandgap semiconductor material. Actual mechanisms of the transition and the interface between CsSnBr3 and CsSn2Br5are interesting for future studies.

Epitaxial lift-off of electrodeposited single-crystal gold foils for flexible electronics

NASA Astrophysics Data System (ADS)

Mahenderkar, Naveen K.; Chen, Qingzhi; Liu, Ying-Chau; Duchild, Alexander R.; Hofheins, Seth; Chason, Eric; Switzer, Jay A.

2017-03-01

We introduce a simple and inexpensive procedure for epitaxial lift-off of wafer-size flexible and transparent foils of single-crystal gold using silicon as a template. Lateral electrochemical undergrowth of a sacrificial SiOx layer was achieved by photoelectrochemically oxidizing silicon under light irradiation. A 28-nanometer-thick gold foil with a sheet resistance of 7 ohms per square showed only a 4% increase in resistance after 4000 bending cycles. A flexible organic light-emitting diode based on tris(bipyridyl)ruthenium(II) that was spin-coated on a foil exploited the transmittance and flexibility of the gold foil. Cuprous oxide as an inorganic semiconductor that was epitaxially electrodeposited onto the gold foils exhibited a diode quality factor n of 1.6 (where n = 1.0 for an ideal diode), compared with a value of 3.1 for a polycrystalline deposit. Zinc oxide nanowires electrodeposited epitaxially on a gold foil also showed flexibility, with the nanowires intact up to 500 bending cycles.

Laterally inhomogeneous barrier analysis of cu/n-gap/al schottky devices

NASA Astrophysics Data System (ADS)

Çınar Demir, K.; Coşkun, C.; Kurudirek, S. V.; Öz, S.; Aydoğan, Ş.; Biber, M.

2016-04-01

In this study, we examined the electrical parameters of Cu/n-GaP/Al Schottky structures at room temperature and examined the electrical characterization of these devices depending on and Capacitance-Voltage (C-V) and Current-Voltage (I-V) measurements. A statistical study on the experimental ideality factor (n) and BHs(barrier heights) values of the devices was stated. The n and BHs of all contacts have been determined from the electrical characteristics. Even though all of the diodes were conformably prepared, there was a diode-todiode variation: the effective BHs changed from 0.988-0.07 to 1.216-0.07 eV, and the n from 1.01-0.299 to 2.16-0.299. The yielded results show that the mean electrical parameters of Schottky devices are different from one diode to another, even if they are identically prepared. It can be axplained that the lower BHs usher with the higher n values owing to inhomogeneities.

Thin Film Differential Photosensor for Reduction of Temperature Effects in Lab-on-Chip Applications.

PubMed

de Cesare, Giampiero; Carpentiero, Matteo; Nascetti, Augusto; Caputo, Domenico

2016-02-20

This paper presents a thin film structure suitable for low-level radiation measurements in lab-on-chip systems that are subject to thermal treatments of the analyte and/or to large temperature variations. The device is the series connection of two amorphous silicon/amorphous silicon carbide heterojunctions designed to perform differential current measurements. The two diodes experience the same temperature, while only one is exposed to the incident radiation. Under these conditions, temperature and light are the common and differential mode signals, respectively. A proper electrical connection reads the differential current of the two diodes (ideally the photocurrent) as the output signal. The experimental characterization shows the benefits of the differential structure in minimizing the temperature effects with respect to a single diode operation. In particular, when the temperature varies from 23 to 50 °C, the proposed device shows a common mode rejection ratio up to 24 dB and reduces of a factor of three the error in detecting very low-intensity light signals.

Thin Film Differential Photosensor for Reduction of Temperature Effects in Lab-on-Chip Applications

PubMed Central

de Cesare, Giampiero; Carpentiero, Matteo; Nascetti, Augusto; Caputo, Domenico

2016-01-01

This paper presents a thin film structure suitable for low-level radiation measurements in lab-on-chip systems that are subject to thermal treatments of the analyte and/or to large temperature variations. The device is the series connection of two amorphous silicon/amorphous silicon carbide heterojunctions designed to perform differential current measurements. The two diodes experience the same temperature, while only one is exposed to the incident radiation. Under these conditions, temperature and light are the common and differential mode signals, respectively. A proper electrical connection reads the differential current of the two diodes (ideally the photocurrent) as the output signal. The experimental characterization shows the benefits of the differential structure in minimizing the temperature effects with respect to a single diode operation. In particular, when the temperature varies from 23 to 50 °C, the proposed device shows a common mode rejection ratio up to 24 dB and reduces of a factor of three the error in detecting very low-intensity light signals. PMID:26907292

Electrical characterization of Au/quercetin/n-Si heterojunction diode and optical analysis of quercetin thin film

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tombak, Ahmet, E-mail: tahmet@yahoo.com; Özaydin, C.; Boğa, M.

2016-03-25

Quercetin (3,5,7,3’,4’-pentahydroxyflavone, QE), one of the most widely distributed flavonoids in fruits and vegetables, has been reported to possess a wide variety of biological effects, including anti-oxidative, anti-inflammatory, anti-apoptosis, hepatoprotective, renoprotective and neuroprotective effects. In this study organic-inorganic junctions were fabricated by forming quercetin complex thin film using spin coating technique on n-Si and evaporating Au metal on the film. Optical properties of quercetin thin film were studied with the help of spectrophotometer. The current-voltage (I-V) characteristic of Au/quercetin/n-Si heterojunction diode was investigated at room temperature in dark. Some basic parameters of the diode such as ideality factor, rectification ratio,more » barrier height, series resistance and shunt resistance were calculated using dark current-voltage measurement. It was also seen that the device had good sensitivity to the light under 40-100 mW/cm{sup 2} illumination conditions.« less

Zinc Oxide-Based Schottky Diode Prepared Using Radio-Frequency Magnetron Cosputtering System

NASA Astrophysics Data System (ADS)

Lai, Bo-Ting; Lee, Ching-Ting; Hong, Jhen-Dong; Yao, Shiau-Lu; Liu, Day-Shan

2010-08-01

The rectifying property of a zinc oxide (ZnO)-based Schottky diode prepared using a radio-frequency (rf) magnetron cosputtering system was improved by enhancing the cosputtered ZnO crystal quality, thereby optimizing the ohmic contact resistance and compensating the Schottky contact surface states. An undoped ZnO layer with a high c-axis orientation and a low internal residual stress was achieved using a postannealing treatment. A homogeneous n-type ZnO-indium tin oxide (ITO) cosputtered film was deposited onto the undoped ZnO layer to optimize the ohmic contact behavior to the Al electrode. The Schottky contact surface of the undoped ZnO layer to the Ni/Au electrode was passivated using an oxygen plasma treatment. Owing to the compensation of the native oxygen vacancies (VO) on the undoped ZnO surface, the leakage current markedly decreased and subsequently led to a quality Schottky diode performance with an ideality factor of 1.23 and a Schottky barrier height of 0.82 eV.

Reconfigurable p-n junction diodes and the photovoltaic effect in exfoliated MoS{sub 2} films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sutar, Surajit; Agnihotri, Pratik; Comfort, Everett

2014-03-24

Realizing basic semiconductor devices such as p-n junctions are necessary for developing thin-film and optoelectronic technologies in emerging planar materials such as MoS{sub 2}. In this work, electrostatic doping by buried gates is used to study the electronic and optoelectronic properties of p-n junctions in exfoliated MoS{sub 2} flakes. Creating a controllable doping gradient across the device leads to the observation of the photovoltaic effect in monolayer and bilayer MoS{sub 2} flakes. For thicker flakes, strong ambipolar conduction enables realization of fully reconfigurable p-n junction diodes with rectifying current-voltage characteristics, and diode ideality factors as low as 1.6. The spectralmore » response of the photovoltaic effect shows signatures of the predicted band gap transitions. For the first excitonic transition, a shift of >4{sub kB}T is observed between monolayer and bulk devices, indicating a thickness-dependence of the excitonic coulomb interaction.« less

Effects of surface morphology on the optical and electrical properties of Schottky diodes of CBD deposited ZnO nanostructures

NASA Astrophysics Data System (ADS)

Mwankemwa, Benard S.; Akinkuade, Shadrach; Maabong, Kelebogile; Nel, Jackie M.; Diale, Mmantsae

2018-04-01

We report on effect of surface morphology on the optical and electrical properties of chemical bath deposited Zinc oxide (ZnO) nanostructures. ZnO nanostructures were deposited on the seeded conducting indium doped tin oxide substrate positioned in three different directions in the growth solution. Field emission scanning electron microscopy was used to evaluate the morphological properties of the synthesized nanostructures and revealed that the positioning of the substrate in the growth solution affects the surface morphology of the nanostructures. The optical absorbance, photoluminescence and Raman spectroscopy of the resulting nanostructures are discussed. The electrical characterization of the Schottky diode such as barrier height, ideality factor, rectification ratios, reverse saturation current and series resistance were found to depend on the nanostructures morphology. In addition, current transport mechanism in the higher forward bias of the Schottky diode was studied and space charge limited current was found to be the dominant transport mechanism in all samples.

Forward-bias diode parameters, electronic noise, and photoresponse of graphene/silicon Schottky junctions with an interfacial native oxide layer

NASA Astrophysics Data System (ADS)

An, Yanbin; Behnam, Ashkan; Pop, Eric; Bosman, Gijs; Ural, Ant

2015-09-01

Metal-semiconductor Schottky junction devices composed of chemical vapor deposition grown monolayer graphene on p-type silicon substrates are fabricated and characterized. Important diode parameters, such as the Schottky barrier height, ideality factor, and series resistance, are extracted from forward bias current-voltage characteristics using a previously established method modified to take into account the interfacial native oxide layer present at the graphene/silicon junction. It is found that the ideality factor can be substantially increased by the presence of the interfacial oxide layer. Furthermore, low frequency noise of graphene/silicon Schottky junctions under both forward and reverse bias is characterized. The noise is found to be 1/f dominated and the shot noise contribution is found to be negligible. The dependence of the 1/f noise on the forward and reverse current is also investigated. Finally, the photoresponse of graphene/silicon Schottky junctions is studied. The devices exhibit a peak responsivity of around 0.13 A/W and an external quantum efficiency higher than 25%. From the photoresponse and noise measurements, the bandwidth is extracted to be ˜1 kHz and the normalized detectivity is calculated to be 1.2 ×109 cm Hz1/2 W-1. These results provide important insights for the future integration of graphene with silicon device technology.

Calculation of the Electronic Parameters of an Al/DNA/p-Si Schottky Barrier Diode Influenced by Alpha Radiation

PubMed Central

Al-Ta’ii, Hassan Maktuff Jaber; Amin, Yusoff Mohd; Periasamy, Vengadesh

2015-01-01

Many types of materials such as inorganic semiconductors have been employed as detectors for nuclear radiation, the importance of which has increased significantly due to recent nuclear catastrophes. Despite the many advantages of this type of materials, the ability to measure direct cellular or biological responses to radiation might improve detector sensitivity. In this context, semiconducting organic materials such as deoxyribonucleic acid or DNA have been studied in recent years. This was established by studying the varying electronic properties of DNA-metal or semiconductor junctions when exposed to radiation. In this work, we investigated the electronics of aluminium (Al)/DNA/silicon (Si) rectifying junctions using their current-voltage (I-V) characteristics when exposed to alpha radiation. Diode parameters such as ideality factor, barrier height and series resistance were determined for different irradiation times. The observed results show significant changes with exposure time or total dosage received. An increased deviation from ideal diode conditions (7.2 to 18.0) was observed when they were bombarded with alpha particles for up to 40 min. Using the conventional technique, barrier height values were observed to generally increase after 2, 6, 10, 20 and 30 min of radiation. The same trend was seen in the values of the series resistance (0.5889–1.423 Ω for 2–8 min). These changes in the electronic properties of the DNA/Si junctions could therefore be utilized in the construction of sensitive alpha particle detectors. PMID:25730484

Temperature dependent electrical properties of rare-earth metal Er Schottky contact on p-type InP

NASA Astrophysics Data System (ADS)

Rao, L. Dasaradha; Reddy, N. Ramesha; Kumar, A. Ashok; Reddy, V. Rajagopal

2013-06-01

The current-voltage (I-V) characteristics of the Er/p-InP Schottky barrier diodes (SBDs) have been investigated in the temperature range of 300-400K in steps of 25K. The electrical parameters such as ideality factor (n) and zero-bias barrier height (Φbo) are found to be strongly temperature dependent. It is observed that ΦI-V decreases whereas n increases with decreasing temperature. The series resistance is also calculated from the forward I-V characteristics of Er/p-InP SBD and it is found to be strongly dependent on temperature. Further, the temperature dependence of energy distribution of interface state density (NSS) profiles is determined from the forward I-V measurements by taking into account the bias dependence of the effective barrier height and ideality factor. It is observed that the NSS values increase with a decrease in temperature.

Proton irradiation effects on gallium nitride-based devices

NASA Astrophysics Data System (ADS)

Karmarkar, Aditya P.

Proton radiation effects on state-of-the-art gallium nitride-based devices were studied using Schottky diodes and high electron-mobility transistors. The device degradation was studied over a wide range of proton fluences. This study allowed for a correlation between proton irradiation effects between different types of devices and enhanced the understanding of the mechanisms responsible for radiation damage in GaN-based devices. Proton irradiation causes reduced carrier concentration and increased series resistance and ideality factor in Schottky diodes. 1.0-MeV protons cause greater degradation than 1.8-MeV protons because of their higher non-ionizing energy loss. The displacement damage in Schottky diodes recovers during annealing. High electron-mobility transistors exhibit extremely high radiation tolerance, continuing to perform up to a fluence of ˜1014 cm-2 of 1.8-MeV protons. Proton irradiation creates defect complexes in the thin-film structure. Decreased sheet carrier mobility due to increased carrier scattering and decreased sheet carrier density due to carrier removal by the defect centers are the primary damage mechanisms. Interface disorder at either the Schottky or the Ohmic contact plays a relatively unimportant part in overall device degradation in both Schottky diodes and high electron-mobility transistors.

Temperature-Dependent and Gate-Tunable Rectification in a Black Phosphorus/WS2 van der Waals Heterojunction Diode.

PubMed

Dastgeer, Ghulam; Khan, Muhammad Farooq; Nazir, Ghazanfar; Afzal, Amir Muhammad; Aftab, Sikandar; Naqvi, Bilal Abbas; Cha, Janghwan; Min, Kyung-Ah; Jamil, Yasir; Jung, Jongwan; Hong, Suklyun; Eom, Jonghwa

2018-04-18

Heterostructures comprising two-dimensional (2D) semiconductors fabricated by individual stacking exhibit interesting characteristics owing to their 2D nature and atomically sharp interface. As an emerging 2D material, black phosphorus (BP) nanosheets have drawn much attention because of their small band gap semiconductor characteristics along with high mobility. Stacking structures composed of p-type BP and n-type transition metal dichalcogenides can produce an atomically sharp interface with van der Waals interaction which leads to p-n diode functionality. In this study, for the first time, we fabricated a heterojunction p-n diode composed of BP and WS 2 . The rectification effects are examined for monolayer, bilayer, trilayer, and multilayer WS 2 flakes in our BP/WS 2 van der Waals heterojunction diodes and also verified by density function theory calculations. We report superior functionalities as compared to other van der Waals heterojunction, such as efficient gate-dependent static rectification of 2.6 × 10 4 , temperature dependence, thickness dependence of rectification, and ideality factor of the device. The temperature dependence of Zener breakdown voltage and avalanche breakdown voltage were analyzed in the same device. Additionally, superior optoelectronic characteristics such as photoresponsivity of 500 mA/W and external quantum efficiency of 103% are achieved in the BP/WS 2 van der Waals p-n diode, which is unprecedented for BP/transition metal dichalcogenides heterostructures. The BP/WS 2 van der Waals p-n diodes have a profound potential to fabricate rectifiers, solar cells, and photovoltaic diodes in 2D semiconductor electronics and optoelectronics.

Single In x Ga1-x As nanowire/p-Si heterojunction based nano-rectifier diode.

PubMed

Sarkar, K; Palit, M; Guhathakurata, S; Chattopadhyay, S; Banerji, P

2017-09-20

Nanoscale power supply units will be indispensable for fabricating next generation smart nanoelectronic integrated circuits. Fabrication of nanoscale rectifier circuits on a Si platform is required for integrating nanoelectronic devices with on-chip power supply units. In the present study, a nanorectifier diode based on a single standalone In x Ga 1-x As nanowire/p-Si (111) heterojunction fabricated by metal organic chemical vapor deposition technique has been studied. The nanoheterojunction diodes have shown good rectification and fast switching characteristics. The rectification characteristics of the nanoheterojunction have been demonstrated by different standard waveforms of sinusoidal, square, sawtooth and triangular for two different frequencies of 1 and 0.1 Hz. Reverse recovery time of around 150 ms has been observed in all wave response. A half wave rectifier circuit with a simple capacitor filter has been assembled with this nanoheterojunction diode which provides 12% output efficiency. The transport of carriers through the heterojunction is investigated. The interface states density of the nanoheterojunction has also been determined. Occurrence of output waveforms incommensurate with the input is attributed to higher series resistance of the diode which is further explained considering the dimension of p-side and n-side of the junction. The sudden change of ideality factor after 1.7 V bias is attributed to recombination through interface states in space charge region. Low interface states density as well as high rectification ratio makes this heterojunction diode a promising candidate for future nanoscale electronics.

Transport and Junction Physics of Semiconductor-Metal Eutectic Composites

DTIC Science & Technology

1988-06-01

eutectic junction and includes the method for making contacts as well as current-voltage (I-V), capacitance- voltage (C-V), and electron-beam-induced current...junction was performed with another RTA at 8000C to 9000C for 10 s. This technique also worked well to provide the necessary ohmic contact. The necessary...solid state diffusion of Ta and Si. The diode is well behaved, with an ideality factor n = 1.10 ± 0.05. Deviation from the straight line forward

The millimeter wave super-Schottky diode detector

NASA Technical Reports Server (NTRS)

Silver, A. H.; Pedersen, R. J.; Mccoll, M.; Dickman, R. L.; Wilson, W. J.

1981-01-01

The 31 and 92 GHz measurements of the superconductor-Schottky diode extended to millimeter wavelengths by a redesign of the semiconductor interface are reported. Diodes were fabricated by pulse electroplating Pb on 2 x 10 to the 19th/cu cm p-Ga-As etched with HCl; a thin Au overplate is deposited to protect the Pb film from degradation and to improve its lifetime. The noise performance was almost ideal at 31 and 92 GHz; it was concluded that this diode is a quantum-limited-detector at 31 GHz, with excessive parasitic losses at 92 GHz.

Laser Velocimeter for Studies of Microgravity Combustion Flowfields

NASA Technical Reports Server (NTRS)

Varghese, P. L.; Jagodzinski, J.

2001-01-01

We are currently developing a velocimeter based on modulated filtered Rayleigh scattering (MFRS), utilizing diode lasers to make measurements in an unseeded gas or flame. MFRS is a novel variation of filtered Rayleigh scattering, utilizing modulation absorption spectroscopy to detect a strong absorption of a weak Rayleigh scattered signal. A rubidium (Rb) vapor filter is used to provide the relatively strong absorption and semiconductor diode lasers generate the relatively weak Rayleigh scattered signal. Alkali metal vapors have a high optical depth at modest vapor pressures, and their narrow linewidth is ideally suited for high-resolution velocimetry; the compact, rugged construction of diode lasers makes them ideally suited for microgravity experimentation. Molecular Rayleigh scattering of laser light simplifies flow measurements as it obviates the complications of flow-seeding. The MFRS velocimeter should offer an attractive alternative to comparable systems, providing a relatively inexpensive means of measuring velocity in unseeded flows and flames.

Shot-noise in resistive-diode mixers and the attenuator noise model

NASA Technical Reports Server (NTRS)

Kerr, A. R.

1979-01-01

The representation of a pumped exponential diode, operating as a mixer, by an equivalent lossy network, is reexamined. It is shown that the model is correct provided the network has ports for all sideband frequencies at which (real) power flow can occur between the diode and its embedding. The temperature of the equivalent network is eta/2 times the physical temperature of the diode. The model is valid only if the series resistance and nonlinear capacitance of the diode are negligible. Expressions are derived for the input and output noise temperature and the noise-temperature ratio of ideal mixers. Some common beliefs concerning noise-figure and noise-temperature ratio are shown to be incorrect.

Electroluminescence and Photocurrent Generation from Atomically Sharp WSe2/MoS2 Heterojunction p–n Diodes

PubMed Central

2015-01-01

The p–n diodes represent the most fundamental device building blocks for diverse optoelectronic functions, but are difficult to achieve in atomically thin transition metal dichalcogenides (TMDs) due to the challenges in selectively doping them into p- or n-type semiconductors. Here, we demonstrate that an atomically thin and sharp heterojunction p–n diode can be created by vertically stacking p-type monolayer tungsten diselenide (WSe2) and n-type few-layer molybdenum disulfide (MoS2). Electrical measurements of the vertically staked WSe2/MoS2 heterojunctions reveal excellent current rectification behavior with an ideality factor of 1.2. Photocurrent mapping shows rapid photoresponse over the entire overlapping region with a highest external quantum efficiency up to 12%. Electroluminescence studies show prominent band edge excitonic emission and strikingly enhanced hot-electron luminescence. A systematic investigation shows distinct layer-number dependent emission characteristics and reveals important insight about the origin of hot-electron luminescence and the nature of electron–orbital interaction in TMDs. We believe that these atomically thin heterojunction p–n diodes represent an interesting system for probing the fundamental electro-optical properties in TMDs and can open up a new pathway to novel optoelectronic devices such as atomically thin photodetectors, photovoltaics, as well as spin- and valley-polarized light emitting diodes, on-chip lasers. PMID:25157588

In Situ Chemical Modification of Schottky Barrier in Solution-Processed Zinc Tin Oxide Diode.

PubMed

Son, Youngbae; Li, Jiabo; Peterson, Rebecca L

2016-09-14

Here we present a novel in situ chemical modification process to form vertical Schottky diodes using palladium (Pd) rectifying bottom contacts, amorphous zinc tin oxide (Zn-Sn-O) semiconductor made via acetate-based solution process, and molybdenum top ohmic contacts. Using X-ray photoelectron spectroscopy depth profiling, we show that oxygen plasma treatment of Pd creates a PdOx interface layer, which is then reduced back to metallic Pd by in situ reactions during Zn-Sn-O film annealing. The plasma treatment ensures an oxygen-rich environment in the semiconductor near the Schottky barrier, reducing the level of oxygen-deficiency-related defects and improving the rectifying contact. Using this process, we achieve diodes with high forward current density exceeding 10(3)A cm(-2) at 1 V, rectification ratios of >10(2), and ideality factors of around 1.9. The measured diode current-voltage characteristics are compared to numerical simulations of thermionic field emission with sub-bandgap states in the semiconductor, which we attribute to spatial variations in metal stoichiometry of amorphous Zn-Sn-O. To the best of our knowledge, this is the first demonstration of vertical Schottky diodes using solution-processed amorphous metal oxide semiconductor. Furthermore, the in situ chemical modification method developed here can be adapted to tune interface properties in many other oxide devices.

Temperature dependent electrical properties of pulse laser deposited Au/Ni/β-(AlGa)2O3 Schottky diode

NASA Astrophysics Data System (ADS)

Feng, Qian; Feng, Zhaoqing; Hu, Zhuangzhuang; Xing, Xiangyu; Yan, Guangshuo; Zhang, Jincheng; Xu, Yongkuan; Lian, Xiaozheng; Hao, Yue

2018-02-01

We have demonstrated the epitaxial growth of a β-(Al0.08Ga0.92)2O3 film on a β-Ga2O3 (010) substrate through pulsed laser deposition. The temperature-dependent electrical characteristics of Au/Ni/β-(Al0.08Ga0.92)2O3 Schottky diodes were investigated in the temperature range of 300-573 K, using thermionic emission theory to calculate the Schottky diode parameters. The barrier height ϕb was found to increase, while the ideality factor n and the series resistance Rs were found to decrease with increasing temperatures. The calculated values of ϕb and n varied from 0.81 eV and 2.29 at 300 K to 1.02 eV and 1.65 at 573 K. The temperature-dependent I-V characteristics of the Schottky diode have shown the Gaussian distribution, yielding a mean barrier height of 1.23 eV and a standard deviation of 0.147 V, respectively. A modified Richardson plot of ln (Is /T2 )-(q2σs2 /2 k2T2 ) versus q/2kT gives ϕb 0 ¯ and A* as 1.24 eV and 44.3 A cm-2 K-2, showing the promise of Ni/β-(AlGa)2O3 as a Schottky diode rectifier.

Photovoltaic Grid-Connected Modeling and Characterization Based on Experimental Results.

PubMed

Humada, Ali M; Hojabri, Mojgan; Sulaiman, Mohd Herwan Bin; Hamada, Hussein M; Ahmed, Mushtaq N

2016-01-01

A grid-connected photovoltaic (PV) system operates under fluctuated weather condition has been modeled and characterized based on specific test bed. A mathematical model of a small-scale PV system has been developed mainly for residential usage, and the potential results have been simulated. The proposed PV model based on three PV parameters, which are the photocurrent, IL, the reverse diode saturation current, Io, the ideality factor of diode, n. Accuracy of the proposed model and its parameters evaluated based on different benchmarks. The results showed that the proposed model fitting the experimental results with high accuracy compare to the other models, as well as the I-V characteristic curve. The results of this study can be considered valuable in terms of the installation of a grid-connected PV system in fluctuated climatic conditions.

Photovoltaic Grid-Connected Modeling and Characterization Based on Experimental Results

PubMed Central

Humada, Ali M.; Hojabri, Mojgan; Sulaiman, Mohd Herwan Bin; Hamada, Hussein M.; Ahmed, Mushtaq N.

2016-01-01

A grid-connected photovoltaic (PV) system operates under fluctuated weather condition has been modeled and characterized based on specific test bed. A mathematical model of a small-scale PV system has been developed mainly for residential usage, and the potential results have been simulated. The proposed PV model based on three PV parameters, which are the photocurrent, IL, the reverse diode saturation current, Io, the ideality factor of diode, n. Accuracy of the proposed model and its parameters evaluated based on different benchmarks. The results showed that the proposed model fitting the experimental results with high accuracy compare to the other models, as well as the I-V characteristic curve. The results of this study can be considered valuable in terms of the installation of a grid-connected PV system in fluctuated climatic conditions. PMID:27035575

Temperature dependence of electrical characteristics of Pt/GaN Schottky diode fabricated by UHV e-beam evaporation.

PubMed

Kumar, Ashish; Arafin, Shamsul; Amann, Markus Christian; Singh, Rajendra

2013-11-15

Temperature-dependent electrical characterization of Pt/n-GaN Schottky barrier diodes prepared by ultra high vacuum evaporation has been done. Analysis has been made to determine the origin of the anomalous temperature dependence of the Schottky barrier height, the ideality factor, and the Richardson constant calculated from the I-V-T characteristics. Variable-temperature Hall effect measurements have been carried out to understand charge transport at low temperature. The modified activation energy plot from the barrier inhomogeneity model has given the value of 32.2 A/(cm2 K2) for the Richardson constant A** in the temperature range 200 to 380 K which is close to the known value of 26.4A/(cm2 K2) for n-type GaN.

Determination of small field synthetic single-crystal diamond detector correction factors for CyberKnife, Leksell Gamma Knife Perfexion and linear accelerator.

PubMed

Veselsky, T; Novotny, J; Pastykova, V; Koniarova, I

2017-12-01

The aim of this study was to determine small field correction factors for a synthetic single-crystal diamond detector (PTW microDiamond) for routine use in clinical dosimetric measurements. Correction factors following small field Alfonso formalism were calculated by comparison of PTW microDiamond measured ratio M Qclin fclin /M Qmsr fmsr with Monte Carlo (MC) based field output factors Ω Qclin,Qmsr fclin,fmsr determined using Dosimetry Diode E or with MC simulation itself. Diode measurements were used for the CyberKnife and Varian Clinac 2100C/D linear accelerator. PTW microDiamond correction factors for Leksell Gamma Knife (LGK) were derived using MC simulated reference values from the manufacturer. PTW microDiamond correction factors for CyberKnife field sizes 25-5 mm were mostly smaller than 1% (except for 2.9% for 5 mm Iris field and 1.4% for 7.5 mm fixed cone field). The correction of 0.1% and 2.0% for 8 mm and 4 mm collimators, respectively, needed to be applied to PTW microDiamond measurements for LGK Perfexion. Finally, PTW microDiamond M Qclin fclin /M Qmsr fmsr for the linear accelerator varied from MC corrected Dosimetry Diode data by less than 0.5% (except for 1 × 1 cm 2 field size with 1.3% deviation). Regarding low resulting correction factor values, the PTW microDiamond detector may be considered an almost ideal tool for relative small field dosimetry in a large variety of stereotactic and radiosurgery treatment devices. Copyright © 2017 Associazione Italiana di Fisica Medica. Published by Elsevier Ltd. All rights reserved.

Laterally stacked Schottky diodes for infrared sensor applications

NASA Technical Reports Server (NTRS)

Lin, True-Lon (Inventor)

1991-01-01

Laterally stacked Schottky diodes for infrared sensor applications are fabricated utilizing porous silicon having pores. A Schottky metal contract is formed in the pores, such as by electroplating. The sensors may be integrated with silicon circuits on the same chip with a high quantum efficiency, which is ideal for IR focal plane array applications due to uniformity and reproducibility.

Anomalous charge storage exponents of organic bulk heterojunction solar cells.

NASA Astrophysics Data System (ADS)

Nair, Pradeep; Dwivedi, Raaz; Kumar, Goutam; Dept of Electrical Engineering, IIT Bombay Team

2013-03-01

Organic bulk heterojunction (BHJ) devices are increasingly being researched for low cost solar energy conversion. The efficiency of such solar cells is dictated by various recombination processes involved. While it is well known that the ideality factor and hence the charge storage exponents of conventional PN junction diodes are influenced by the recombination processes, the same aspects are not so well understood for organic solar cells. While dark currents of such devices typically show an ideality factor of 1 (after correcting for shunt resistance effects, if any), surprisingly, a wide range of charge storage exponents for such devices are reported in literature alluding to apparent concentration dependence for bi-molecular recombination rates. In this manuscript we critically analyze the role of bi-molecular recombination processes on charge storage exponents of organic solar cells. Our results indicate that the charge storage exponents are fundamentally influenced by the electrostatics and recombination processes and can be correlated to the dark current ideality factors. We believe that our findings are novel, and advance the state-of the art understanding on various recombination processes that dictate the performance limits of organic solar cells. The authors would like to thank the Centre of Excellence in Nanoelectronics (CEN) and the National Centre for Photovoltaic Research and Education (NCPRE), IIT Bombay for computational and financial support

Comparative Aging Study of Organic Solar Cells Utilizing Polyaniline and PEDOT:PSS as Hole Transport Layers.

PubMed

Abdulrazzaq, Omar; Bourdo, Shawn E; Woo, Myungwu; Saini, Viney; Berry, Brian C; Ghosh, Anindya; Biris, Alexandru S

2015-12-23

The aging effect on P3HT:PCBM organic solar cells was investigated with camphorsulfonic doped polyaniline (PANI:CSA) or poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) ( PSS) used as the hole transport layer (HTL). The cells were encapsulated and exposed to a continuous normal atmosphere on a dark shelf and then characterized intermittently for more than two years. The photovoltaic results revealed that the cells with PSS HTL showed better initial results than the cells with PANI:CSA HTL. Over time, PSS-based cells exhibited faster degradation than PANI:CSA-based cells, where the average efficiency of six cells dropped to zero in less than one and a half years. On the other hand, PANI:CSA-based cells exhibited a much more stable performance with an average efficiency drop of only 15% of their initial values after one and a half years and 63% after two years. A single-diode model was utilized to fit the experimental data with the theoretical curve to extract the diode parameters, such as the ideality factor, to explain the effect of aging on the diode's performance.

Capacitance and conductance-frequency characteristics of In-pSi Schottky barrier diode

NASA Astrophysics Data System (ADS)

Dhimmar, J. M.; Desai, H. N.; Modi, B. P.

2015-06-01

The Schottky barrier height (SBH) values have been calculated by using the reverse bias capacitance-voltage (C-V) characteristics at temperature range of 120-360K. The forward bias capacitance-frequency (C-f) and conductance- frequency (G-f) measurement of In-pSi SBD have been carried out from 0-1.0 V with a step up 0.05 V whereby the energy distribution of the interface state has been determined from the forward bias I-V data taking the bias dependence of the effective barrier height and series resistance (RS) into account. The high value of ideality factor (n=2.12) was attributing to high density of interface states and interfacial oxide layer at metal semiconductor interface. The interface state density (NSS) shows a decrease with bias from bottom of conduction band toward the mid gap. In order to examine frequency dependence NSS, RS, C-V and G(ω)/ω-f measurement of the diode were performed at room temperature in the frequency range of 100Hz-100KHz. Experimental result confirmed that there is an influence in the electrical characteristic of Schottky diode.

n-ZnO/p-4H-SiC diode: Structural, electrical, and photoresponse characteristics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Guziewicz, M., E-mail: margu@ite.waw.pl; Jung, W.; Schifano, R.

Epitaxial n-type ZnO film has been grown, on a commercial 5 μm thick p-type 4H-SiC(00.1) Al doped epilayer, by atomic layer deposition. A full width at half maximum of the ZnO 00.2 diffraction peak rocking curve of 0.34°{sup  }± 0.02° has been measured. Diodes formed on the n-ZnO/p-4H-SiC heterostructure show rectifying behavior with a forward to reverse current ratio at the level of 10{sup 9} at ±4 V, a leakage current density of ∼6 × 10{sup −8} A/cm{sup 2}, and a low ideality factor equal to 1.17 ± 0.04. In addition, the diodes exhibit selective photoresponse with a maximum at 367 nm, and with a current increasemore » of ∼10{sup 3} under illuminations with respect to the dark value, which makes such devices prospective candidates for ultraviolet light sensors.« less

Fabrication of the heterojunction diode from Y-doped ZnO thin films on p-Si substrates by sol-gel method

NASA Astrophysics Data System (ADS)

Sharma, Sanjeev K.; Singh, Satendra Pal; Kim, Deuk Young

2018-02-01

The heterojunction diode of yttrium-doped ZnO (YZO) thin films was fabricated on p-Si(100) substrates by sol-gel method. The post-annealing process was performed at 600 °C in vacuum for a short time (3 min) to prevent inter-diffusion of Zn, Y, and Si atoms. X-ray diffraction (XRD) pattern of as-grown and annealed (600 °C in vacuum) films showed the preferred orientation along the c-axis (002) regardless of dopant concentrations. The uniform surface microstructure and the absence of other metal/oxide peaks in XRD pattern confirmed the excellence of films. The increasing bandgap and carrier concentration of YZO thin films were interpreted by the BM shift, that is, the Fermi level moves towards the conduction band edge. The current-voltage characteristics of the heterojunction diode, In/n-ZnO/p-Si/Al, showed a rectification behavior. The turn-on voltage and ideality factor of n-ZnO/p-Si and n-YZO/p-Si were observed to be 3.47 V, 2.61 V, and 1.97, 1.89, respectively. Y-dopant in ZnO thin films provided more donor electrons caused the shifting of Fermi-energy level towards the conduction band and strengthen the interest for heterojunction diodes.

The Influence of High-Energy Electrons Irradiation on Surface of n-GaP and on Au/n-GaP/Al Schottky Barrier Diode

NASA Astrophysics Data System (ADS)

Demir, K. Çinar; Kurudirek, S. V.; Oz, S.; Biber, M.; Aydoğan, Ş.; Şahin, Y.; Coşkun, C.

We fabricated 25 Au/n-GaP/Al Schottky devices and investigated the influence of high electron irradiation, which has 12MeV on the devices, at room temperature. The X-ray diffraction patterns, scanning electron microscopic images and Raman spectra of a gallium phosphide (GaP) semiconductor before and after electron irradiation have been analyzed. Furthermore, some electrical measurements of the devices were carried out through the current-voltage (I-V) and capacitance-voltage (C-V) measurements. From the I-V characteristics, experimental ideality factor n and barrier height Φ values of these Schottky diodes have been determined before and after irradiation, respectively. The results have also been analyzed statically, and a gauss distribution has been obtained. The built-in potential Vbi, barrier height Φ, Fermi level EF and donor concentration Nd values have been determined from the reverse bias C-V and C-2-V curves of Au/n-GaP/Al Schottky barrier diodes at 100kHz before and after 12MeV electron irradiation. Furthermore, we obtained the series resistance values of Au/n-GaP/Al Schottky barrier diodes with the help of different methods. Experimental results confirmed that the electrical characterization of the device changed with the electron irradiation.

Optoelectronic properties of hybrid diodes based on vanadyl-phthalocyanine and zinc oxide

NASA Astrophysics Data System (ADS)

Kiran, M. Raveendra; Ulla, Hidayath; Satyanarayan, M. N.; Umesh, G.

2017-12-01

We report an investigation of the optoelectronic properties of a hybrid p-n diode device fabricated using ZnO film prepared by sol-gel technique on which a VOPc organic film is deposited by vacuum evaporation. The charge transport properties of devices having the configurations ITO/ZnO/Al and ITO/ZnO/VOPc/MoO3/Al were investigated at different annealing temperatures (150 °C, 250 °C, 350 °C and 450 °C) by Impedance Spectroscopy (IS). The structural, morphological, optical and electrical properties were also studied at different annealing temperatures. The parameters related to the ITO/ZnO and ZnO/VOPc interfaces such as ideality factor (n), barrier height (qϕB) and rectification ratio (RR) of the diodes were determined from current density-voltage (J-V) characteristics. IS measurements suggest that the large photocurrent generated is due to the decrease in bulk resistance of the device on account of the generation of electron-hole pairs in the organic active layer when exposed to light. The RR and the photocurrent responsivity (Rph) values obtained from the J-V characteristics compare well with those obtained from the IS measurements. It was observed that the absolute value of Rph (470 mA/W) for the p-n diode with ZnO annealed at 350 °C is high compared to that of diodes with different ZnO annealing temperatures. These values also agree well with the values obtained for p-n diodes of other phthalocyanines. Our studies clearly demonstrate that a p-n diode with ZnO film annealed at 350 °C exhibits much better optoelectronic characteristics on account of increased grain size, improved charge injection due to the reduction of barrier height and hence higher (up to 5 orders) charge carrier mobility.

Multifunctional hybrid diode: Study of photoresponse, high responsivity, and charge injection mechanisms

NASA Astrophysics Data System (ADS)

Singh, Jitendra; Singh, R. G.; Gautam, Subodh K.; Singh, Fouran

2018-05-01

A multifunctional hybrid heterojunction diode is developed on porous silicon and its current density-voltage characteristics reveal a good rectification ratio along with other superior parameters such as ideality factor, barrier height and series resistance. The diode also functions as an efficient photodiode to manifest high photosensitivity with high responsivity under illumination with broadband solar light, UV light, and green light. The diode is also carefully scrutinized for its sensitivity and repeatability over many cycles under UV and green light and is found to have a quick response and extremely fast recovery times. The notable responsivity is attributed to the generation of high density of excitons in the depletion region by the absorption of incident photons and their separation by an internal electric field besides an additional photocurrent due to the charging of polymer chains. The mechanisms of generation, injection and transport of charge carriers are explained by developing a schematic energy band diagram. The transport phenomenon of carriers is further investigated from room temperature down to a very low temperature of 10 K. An Arrhenius plot is made to determine the Richardson constant. Various diode parameters as mentioned above are also determined and the dominance of the transport mechanism of charge carriers in different temperature regimes such as diffusion across the junction and/or quantum tunneling through the barriers are explained. The developed multifunction heterojunction hybrid diodes have implications for highly sensitive photodiodes in the UV and visible range of electromagnetic spectrum that can be very promising for efficient optoelectronic devices.

Low-Temperature Electrical Characteristics of Si-Based Device with New Tetrakis NiPc-SNS Active Layer

NASA Astrophysics Data System (ADS)

Yavuz, Arzu Büyükyağci; Carbas, Buket Bezgın; Sönmezoğlu, Savaş; Soylu, Murat

2016-01-01

A new tetrakis 4-(2,5-di-2-thiophen-2-yl-pyrrol-1-yl)-substituted nickel phthalocyanine (NiPc-SNS) has been synthesized. This synthesized NiPc-SNS thin film was deposited on p-type Si substrate using the spin coating method (SCM) to fabricate a NiPc-SNS/ p-Si heterojunction diode. The temperature-dependent electrical characteristics of the NiPc-SNS/ p-Si heterojunction with good rectifying behavior were investigated by current-voltage ( I- V) measurements between 50 K and 300 K. The results indicate that the ideality factor decreases while the barrier height increases with increasing temperature. The barrier inhomogeneity across the NiPc-SNS/ p-Si heterojunction reveals a Gaussian distribution at low temperatures. These results provide further evidence of the more complicated mechanisms occurring in this heterojunction. Based on these findings, NiPc-SNS/ p-Si junction diodes are feasible for use in low-temperature applications.

Trap-mediated electronic transport properties of gate-tunable pentacene/MoS2 p-n heterojunction diodes

PubMed Central

Kim, Jae-Keun; Cho, Kyungjune; Kim, Tae-Young; Pak, Jinsu; Jang, Jingon; Song, Younggul; Kim, Youngrok; Choi, Barbara Yuri; Chung, Seungjun; Hong, Woong-Ki; Lee, Takhee

2016-01-01

We investigated the trap-mediated electronic transport properties of pentacene/molybdenum disulphide (MoS2) p-n heterojunction devices. We observed that the hybrid p-n heterojunctions were gate-tunable and were strongly affected by trap-assisted tunnelling through the van der Waals gap at the heterojunction interfaces between MoS2 and pentacene. The pentacene/MoS2 p-n heterojunction diodes had gate-tunable high ideality factor, which resulted from trap-mediated conduction nature of devices. From the temperature-variable current-voltage measurement, a space-charge-limited conduction and a variable range hopping conduction at a low temperature were suggested as the gate-tunable charge transport characteristics of these hybrid p-n heterojunctions. Our study provides a better understanding of the trap-mediated electronic transport properties in organic/2-dimensional material hybrid heterojunction devices. PMID:27829663

Trap-mediated electronic transport properties of gate-tunable pentacene/MoS2 p-n heterojunction diodes

NASA Astrophysics Data System (ADS)

Kim, Jae-Keun; Cho, Kyungjune; Kim, Tae-Young; Pak, Jinsu; Jang, Jingon; Song, Younggul; Kim, Youngrok; Choi, Barbara Yuri; Chung, Seungjun; Hong, Woong-Ki; Lee, Takhee

2016-11-01

We investigated the trap-mediated electronic transport properties of pentacene/molybdenum disulphide (MoS2) p-n heterojunction devices. We observed that the hybrid p-n heterojunctions were gate-tunable and were strongly affected by trap-assisted tunnelling through the van der Waals gap at the heterojunction interfaces between MoS2 and pentacene. The pentacene/MoS2 p-n heterojunction diodes had gate-tunable high ideality factor, which resulted from trap-mediated conduction nature of devices. From the temperature-variable current-voltage measurement, a space-charge-limited conduction and a variable range hopping conduction at a low temperature were suggested as the gate-tunable charge transport characteristics of these hybrid p-n heterojunctions. Our study provides a better understanding of the trap-mediated electronic transport properties in organic/2-dimensional material hybrid heterojunction devices.

Trap-mediated electronic transport properties of gate-tunable pentacene/MoS2 p-n heterojunction diodes.

PubMed

Kim, Jae-Keun; Cho, Kyungjune; Kim, Tae-Young; Pak, Jinsu; Jang, Jingon; Song, Younggul; Kim, Youngrok; Choi, Barbara Yuri; Chung, Seungjun; Hong, Woong-Ki; Lee, Takhee

2016-11-10

We investigated the trap-mediated electronic transport properties of pentacene/molybdenum disulphide (MoS 2 ) p-n heterojunction devices. We observed that the hybrid p-n heterojunctions were gate-tunable and were strongly affected by trap-assisted tunnelling through the van der Waals gap at the heterojunction interfaces between MoS 2 and pentacene. The pentacene/MoS 2 p-n heterojunction diodes had gate-tunable high ideality factor, which resulted from trap-mediated conduction nature of devices. From the temperature-variable current-voltage measurement, a space-charge-limited conduction and a variable range hopping conduction at a low temperature were suggested as the gate-tunable charge transport characteristics of these hybrid p-n heterojunctions. Our study provides a better understanding of the trap-mediated electronic transport properties in organic/2-dimensional material hybrid heterojunction devices.

Electrical properties of III-Nitride LEDs: Recombination-based injection model and theoretical limits to electrical efficiency and electroluminescent cooling

DOE Office of Scientific and Technical Information (OSTI.GOV)

David, Aurelien, E-mail: adavid@soraa.com; Hurni, Christophe A.; Young, Nathan G.

The current-voltage characteristic and ideality factor of III-Nitride quantum well light-emitting diodes (LEDs) grown on bulk GaN substrates are investigated. At operating temperature, these electrical properties exhibit a simple behavior. A model in which only active-region recombinations have a contribution to the LED current is found to account for experimental results. The limit of LED electrical efficiency is discussed based on the model and on thermodynamic arguments, and implications for electroluminescent cooling are examined.

Power blue and green laser diodes and their applications

NASA Astrophysics Data System (ADS)

Hager, Thomas; Strauß, Uwe; Eichler, Christoph; Vierheilig, Clemens; Tautz, Sönke; Brüderl, Georg; Stojetz, Bernhard; Wurm, Teresa; Avramescu, Adrian; Somers, André; Ristic, Jelena; Gerhard, Sven; Lell, Alfred; Morgott, Stefan; Mehl, Oliver

2013-03-01

InGaN based green laser diodes with output powers up to 50mW are now well established for variety of applications ranging from leveling to special lighting effects and mobile projection of 12lm brightness. In future the highest market potential for visible single mode profile lasers might be laser projection of 20lm. Therefore direct green single-mode laser diodes with higher power are required. We found that self heating was the limiting factor for higher current operation. We present power-current characteristics of improved R and D samples with up to 200mW in cw-operation. An optical output power of 100mW is reached at 215mA, a current level which is suitable for long term operation. Blue InGaN laser diodes are also the ideal source for phosphor based generation of green light sources of high luminance. We present a light engine based on LARP (Laser Activated Remote Phosphor) which can be used in business projectors of several thousand lumens on screen. We discuss the advantages of a laser based systems in comparison with LED light engines. LARP requires highly efficient blue power laser diodes with output power above 1W. Future market penetration of LARP will require lower costs. Therefore we studied new designs for higher powers levels. R and D chips with power-current characteristics up to 4W in continuous wave operation on C-mount at 25°C are presented.

Construction and evaluation of high-quality n-ZnO nanorod/p-diamond heterojunctions.

PubMed

Wang, C D; Jha, S K; Chen, Z H; Ng, T W; Liu, Y K; Yuen, M F; Lu, Z Z; Kwok, S Y; Zapien, J A; Bello, I; Lee, C S; Zhang, W J

2012-06-01

Vertically-aligned ZnO nanorods (NRs) arrays were synthesized by a low-temperature solution method on boron-doped diamond (BDD) films. The morphology, growth direction, and crystallinity of the ZnO NRs were studied by scanning electron microscopy, X-ray diffraction and cathodoluminescence. Electrical characterization of the ZnO NR/BBD heterostructures revealed characteristic p-n junction properties with an on/off ratio of about 50 at +/- 4 V and a small reverse leakage current approximately 1 microA. Moreover, the junctions showed an ideality factor around 1.0 at a low forward voltage from 0 to 0.3 V and about 2.1 for an increased voltage ranging from 1.2 to 3.0 V, being consistent with that of an ideal diode according to the Sah-Noyce-Shockley theory.

Current transport and capacitance-voltage characteristics of an n-PbTe/p-GaP heterojunction prepared using the electron beam deposition technique

NASA Astrophysics Data System (ADS)

Nasr, Mahmoud; El Radaf, I. M.; Mansour, A. M.

2018-04-01

In this study, a crystalline n-PbTe/p-GaP heterojunction was fabricated using the electron beam deposition technique. The structural properties of the prepared heterojunction were examined by X-ray diffraction and scanning electron microscopy. The dark current-voltage characteristics of the heterojunction were investigated at different temperatures ranging from 298 to 398 K. The rectification factor, series resistance, shunt resistance, diode ideality factor, and effective barrier height (ϕb) were determined. The photovoltaic parameters were identified based on the current density-voltage characteristics under illumination. The capacitance-voltage characteristics showed that the junction was abrupt in nature.

Hybrid Cu(2)O diode with orientation-controlled C(60) polycrystal.

PubMed

Izaki, Masanobu; Saito, Takamasa; Ohata, Tatsuya; Murata, Kazufumi; Fariza, Binti Mohamad; Sasano, Junji; Shinagawa, Tsutomu; Watase, Seiji

2012-07-25

We report on a hybrid diode composed of a 2.1 eV bandgap p-cupric oxide (Cu2O) semiconductor and fullerene (C60) layer with a face-centered cubic configuration. The hybrid diode has been constructed by electrodeposition of the 500 nm thick Cu2O layer in a basic aqueous solution containing a copper acetate hydrate and lactic acid followed by a vacuum evaporation of the 50 nm thick C60 layer at the evaporation rate from 0.25 to 1.0 Å/s. The C60 layers prepared by the evaporation possessed a face-centered cubic configuration with the lattice constant of 14.19 A, and the preferred orientation changed from random to (111) plane with decrease in the C60 evaporation rate from 1.0 to 0.25 Å/s. The hybrid p-Cu2O/C60 diode showed a rectification feature regardless of the C60 evaporation rate, and both the rectification ratio and forward current density improved with decrease in the C60 evaporation rate. The excellent rectification with the ideality factor of approximately 1 was obtained for the 500 nm thick (111)-Cu2O/50 nm thick (111)-fcc-C60/bathocuproine (BCP) diode at the C60 evaporation rate of 0.25 Å /s. The hybrid Cu2O/C60 diode prepared by stacking the C60 layer at the evaporation rate of 0.25 Å/s revealed the photovoltaic performance of 8.7 × 10(-6)% in conversion efficiency under AM1.5 illumination, and the conversion efficiency changed depending on the C60 evaporation rate.

On electrical and interfacial properties of iron and platinum Schottky barrier diodes on (111) n-type Si0.65Ge0.35

NASA Astrophysics Data System (ADS)

Hamri, D.; Teffahi, A.; Djeghlouf, A.; Chalabi, D.; Saidane, A.

2018-04-01

Current-voltage (I-V), capacitance-voltage-frequency (C-V-f) and conductance-voltage-frequency (G/ω-V-f) characteristics of Molecular Beam Epitaxy (MBE)-deposited Fe/n-Si0.65Ge0.35 (FM1) and Pt/n-Si0.65Ge0.35(PM2) (111) orientated Schottky barrier diodes (SBDs) have been investigated at room-temperature. Barrier height (ΦB0), ideality factor (n) and series resistance (RS) were extracted. Dominant current conduction mechanisms were determined. They revealed that Poole-Frenkel-type conduction mechanism dominated reverse current. Differences in shunt resistance confirmed the difference found in leakage current. Under forward bias, quasi-ohmic conduction is found at low voltage regions and space charge-limited conduction (SCLC) at higher voltage regions for both SBDs. Density of interface states (NSS) indicated a difference in interface reactivity. Distribution profiles of series resistance (RS) with bias gives a peak in depletion region at low-frequencies that disappears with increasing frequencies. These results show that interface states density and series resistance of Schottky diodes are important parameters that strongly influence electrical properties of FM1 and PM2 structures.

Electrical and NO2 sensing characteristics of Pd/ZnO nanoparticles based Schottky diode at room temperature

NASA Astrophysics Data System (ADS)

Chandra, Lalit; Sahu, Praveen Kumar; Dwivedi, R.; Mishra, V. N.

2017-12-01

The present work deals with Pd/ZnO nanoparticles based Schottky diode for detection of NO2 at room temperature (298 K). To fabricate Pd/ZnO Schottky diode, zinc oxide (ZnO) nanoparticles (NPs) based film was developed on glass substrate using sol-gel spin coating process. Subsequently; Pd was deposited on ZnO using thermal evaporation technique. The structural properties of developed ZnO film were studied using energy dispersive x-ray spectroscopy (EDS), x-ray diffraction (XRD) and field emission scanning electron microscopy (FE-SEM). The particles size of the developed film was in range of ~25 to ~110 nm. The response of fabricated Pd/ZnO Schottky diode was studied upon exposure to NO2 in terms of change in I-V characteristics. The magnitude of barrier height and ideality factor has been evaluated with concentration of NO2 ranging from 10 to 50 ppm. The developed sensor has good sensitivity of ~45.2%, with fast response and recovery time; 67 s and 250 s respectively for 50 ppm concentration of NO2 with excellent repeatability. The obtained results have been explained in terms of surface and subsurface adsorption of NO2 on Pd, subsequently dissociation of NO2 and its diffusion, which creates dipole moment at the Pd/ZnO interface.

Effects of Post Annealing on I-V-T Characteristics of (Ni/Au)/Al0.09Ga0.91N Schottky Barrier Diodes

NASA Astrophysics Data System (ADS)

Akkaya, Abdullah; Ayyıldız, Enise

2016-04-01

Post annealing is a simple, effective and suitable method for improving the diode parameters, especially when the used chemically stable substrates like Si, III-N and ternary alloys. In our work, we were applied this method to (Ni/Au)/Al0.09Ga0.91N Schottky Barrier Diodes (SBDs) and investigated by temperature-dependent current-voltage (I-V-T) characteristics at optimum conditions. Optimum annealing temperature was 600°C, which it’s determined with respect to have a highest barrier height value. The temperature-dependent electrical characteristics of the annealed at 600°C (Ni/Au)/Al0.09Ga0.91N SBDs were investigated in the wide temperature range of 95-315K. The diode parameters such as ideality factor (n) and Schottky barrier height (Vb0) were obtained to be strongly temperature dependent. The observed variation in Vb0 and n can be attributed to the spatial barrier inhomogeneities in Schottky barrier height by assuming a triple Gaussian distribution (TGD) of barrier heights (BHs) at 95-145K, 145-230K and 230-315K. The modified Richardson plots and T0 analysis was performed to provide an experimental Richardson constants and bias coefficients of the mean barrier height. Furthermore, the chemical composition of the contacts was examined by the XPS depth profile analysis.

Fabrication and electrical characterizations of graphene nanocomposite thin film based heterojunction diode

NASA Astrophysics Data System (ADS)

Rahim, Ishrat; Shah, Mutabar; Iqbal, Mahmood; Wahab, Fazal; Khan, Afzal; Khan, Shah Haider

2017-11-01

The use of graphene in electronic devices is becoming attractive due to its inherent scalability and is thus well suited for flexible electronic devices. Here we present the electrical characterization of heterojunction diode, based on the nanocomposite of graphene (G) with silver nanoparticles (Ag NPs), at room temperature. The diode was fabricated by depositing nanocomposite on the n-Si substrate. The current - voltage (I - V) characteristic of the fabricated junction shows rectifying behavior similar to a Schottky junction. The junction parameters such as ideality factor (n), series resistance (Rs), and barrier height (ϕb) has been extracted, using various methods, from the experimentally obtained I - V data. The measured values of n, Rs and ϕb are 3.86, 45 Ω and 0.367 eV, respectively, as calculated from the I - V curve. The numerical values of these parameters calculated by different methods are in good agreement with each other showing the consistency of the applied calculating techniques. The conduction mechanism of the fabricated diode seems to have been dominated by the Trap Charge Limited Conduction (TCLC) behavior. The energy distribution of interface states density determined from forward bias I - V characteristic shows an exponential decrease with bias from 27 × 1013 cm-2 eV-1 at (Ec - 0.345) eV to 3 × 1013 cm-2 eV-1at (Ec - 0.398) eV.

Diode Lasers used in Plastic Welding and Selective Laser Soldering - Applications and Products

NASA Astrophysics Data System (ADS)

Reinl, S.

Aside from conventional welding methods, laser welding of plastics has established itself as a proven bonding method. The component-conserving and clean process offers numerous advantages and enables welding of sensitive assemblies in automotive, electronic, medical, human care, food packaging and consumer electronics markets. Diode lasers are established since years within plastic welding applications. Also, soft soldering using laser radiation is becoming more and more significant in the field of direct diode laser applications. Fast power controllability combined with a contactless temperature measurement to minimize thermal damage make the diode laser an ideal tool for this application. These advantages come in to full effect when soldering of increasingly small parts in temperature sensitive environments is necessary.

Vertical nanowire heterojunction devices based on a clean Si/Ge interface.

PubMed

Chen, Lin; Fung, Wayne Y; Lu, Wei

2013-01-01

Different vertical nanowire heterojunction devices were fabricated and tested based on vertical Ge nanowires grown epitaxially at low temperatures on (111) Si substrates with a sharp and clean Si/Ge interface. The nearly ideal Si/Ge heterojuctions with controlled and abrupt doping profiles were verified through material analysis and electrical characterizations. In the nSi/pGe heterojunction diode, an ideality factor of 1.16, subpicoampere reverse saturation current, and rectifying ratio of 10(6) were obtained, while the n+Si/p+Ge structure leads to Esaki tunnel diodes with a high peak tunneling current of 4.57 kA/cm(2) and negative differential resistance at room temperature. The large valence band discontinuity between the Ge and Si in the nanowire heterojunctions was further verified in the p+Si/pGe structure, which shows a rectifying behavior instead of an Ohmic contact and raises an important issue in making Ohmic contacts to heterogeneously integrated materials. A raised Si/Ge structure was further developed using a self-aligned etch process, allowing greater freedom in device design for applications such as the tunneling field-effect transistor (TFET). All measurement data can be well-explained and fitted with theoretical models with known bulk properties, suggesting that the Si/Ge nanowire system offers a very clean heterojunction interface with low defect density, and holds great potential as a platform for future high-density and high-performance electronics.

Schottky barrier parameters and low frequency noise characteristics of graphene-germanium Schottky barrier diode

NASA Astrophysics Data System (ADS)

Khurelbaatar, Zagarzusem; Kil, Yeon-Ho; Shim, Kyu-Hwan; Cho, Hyunjin; Kim, Myung-Jong; Lee, Sung-Nam; Jeong, Jae-chan; Hong, Hyobong; Choi, Chel-Jong

2016-03-01

We investigated the electrical properties of chemical vapor deposition-grown monolayer graphene/n-type germanium (Ge) Schottky barrier diodes (SBD) using current-voltage (I-V) characteristics and low frequency noise measurements. The Schottky barrier parameters of graphene/n-type Ge SBDs, such as Schottky barrier height (VB), ideality factor (n), and series resistance (Rs), were extracted using the forward I-V and Cheung's methods. The VB and n extracted from the forward ln(I)-V plot were found to be 0.63 eV and 1.78, respectively. In contrast, from Cheung method, the VB and n were calculated to be 0.53 eV and 1.76, respectively. Such a discrepancy between the values of VB calculated from the forward I-V and Cheung's methods indicated a deviation from the ideal thermionic emission of graphene/n-type Ge SBD associated with the voltage drop across graphene. The low frequency noise measurements performed at the frequencies in the range of 10 Hz-1 kHz showed that the graphene/n-type Ge SBD had 1/f γ frequency dependence, with γ ranging from 1.09 to 1.12, regardless of applied forward biases. Similar to forward-biased SBDs operating in the thermionic emission mode, the current noise power spectral density of graphene/n-type Ge SBD was linearly proportional to the forward current.

Electrical and photoresponse properties of vacuum deposited Si/Al:ZnSe and Bi:ZnTe/Al:ZnSe photodiodes

NASA Astrophysics Data System (ADS)

Rao, Gowrish K.

2017-04-01

The paper reports fabrication and characterization of Bi:ZnTe/Al:ZnSe and Si/Al:ZnSe thin film photodiodes. The characteristics of the devices were studied under dark and illuminated conditions. The normalized spectral response, speed of photoresponse and variation of photocurrent with power density were studied in detail. Many vital parameters, such as diode ideality factor, barrier height, the thickness of the depletion region, trap depth, rise and decay times of photocurrent, were determined. Conduction mechanism in the photodiodes is discussed with the help of widely accepted theoretical models.

Observation and discussion of avalanche electroluminescence in GaN p-n diodes offering a breakdown electric field of 3 MV cm‑1

NASA Astrophysics Data System (ADS)

Mandal, S.; Kanathila, M. B.; Pynn, C. D.; Li, W.; Gao, J.; Margalith, T.; Laurent, M. A.; Chowdhury, S.

2018-06-01

We report on the first observation of avalanche electroluminescence resulting from band-to-band recombination (BTBR) of electron hole pairs at the breakdown limit of Gallium Nitride p-n diodes grown homo-epitaxially on single crystalline GaN substrates. The diodes demonstrated a near ideal breakdown electric field of 3 MV cm‑1 with electroluminescence (EL) demonstrating sharp peaks of emission energies near and at the band gap of GaN. The high critical electric field, near the material limit of GaN, was achieved by generating a smooth curved mesa edge with low plasma damage, using etch engineering without any use of field termination. The superior material quality was critical for such a near-ideal performance. An electric field of 3 MV cm‑1 recorded at the breakdown resulted in impact ionization, confirmed by a positive temperature dependence of the breakdown voltage. The spectral data provided evidence of BTBR of electron hole pairs that were generated by avalanche carrier multiplication in the depletion region.

Electromechanical Characterization of Single GaN Nanobelt Probed with Conductive Atomic Force Microscope

NASA Astrophysics Data System (ADS)

Yan, X. Y.; Peng, J. F.; Yan, S. A.; Zheng, X. J.

2018-04-01

The electromechanical characterization of the field effect transistor based on a single GaN nanobelt was performed under different loading forces by using a conductive atomic force microscope (C-AFM), and the effective Schottky barrier height (SBH) and ideality factor are simulated by the thermionic emission model. From 2-D current image, the high value of the current always appears on the nanobelt edge with the increase of the loading force less than 15 nN. The localized (I-V) characteristic reveals a typical rectifying property, and the current significantly increases with the loading force at the range of 10-190 nN. The ideality factor is simulated as 9.8 within the scope of GaN nano-Schottky diode unity (6.5-18), therefore the thermionic emission current is dominant in the electrical transport of the GaN-tip Schottky junction. The SBH is changed through the piezoelectric effect induced by the loading force, and it is attributed to the enhanced current. Furthermore, a single GaN nanobelt has a high mechanical-induced current ratio that could be made use of in a nanoelectromechanical switch.

Electromechanical Characterization of Single GaN Nanobelt Probed with Conductive Atomic Force Microscope

NASA Astrophysics Data System (ADS)

Yan, X. Y.; Peng, J. F.; Yan, S. A.; Zheng, X. J.

2018-07-01

The electromechanical characterization of the field effect transistor based on a single GaN nanobelt was performed under different loading forces by using a conductive atomic force microscope (C-AFM), and the effective Schottky barrier height (SBH) and ideality factor are simulated by the thermionic emission model. From 2-D current image, the high value of the current always appears on the nanobelt edge with the increase of the loading force less than 15 nN. The localized ( I- V) characteristic reveals a typical rectifying property, and the current significantly increases with the loading force at the range of 10-190 nN. The ideality factor is simulated as 9.8 within the scope of GaN nano-Schottky diode unity (6.5-18), therefore the thermionic emission current is dominant in the electrical transport of the GaN-tip Schottky junction. The SBH is changed through the piezoelectric effect induced by the loading force, and it is attributed to the enhanced current. Furthermore, a single GaN nanobelt has a high mechanical-induced current ratio that could be made use of in a nanoelectromechanical switch.

Structural, electrical and photovoltaic properties of CoS/Si heterojunction prepared by spray pyrolysis

NASA Astrophysics Data System (ADS)

El Radaf, I. M.; Nasr, Mahmoud; Mansour, A. M.

2018-01-01

Au/p-CoS/n-Si/Al heterojunction device was fabricated by spray pyrolysis technique. The structural and morphological features were examined by x-ray diffraction, scanning electron microscope and energy dispersive x-ray analysis. The capacitance-voltage characteristics of the prepared heterojunction were analyzed at room temperature in the dark. The current-voltage characteristics were examined under dark and different incident light intensities 20-100 mW cm-2. The rectification ratio, series resistance, shunt resistance, diode ideality factor and the effective barrier height were determined at dark and illumination conditions. The photovoltaic parameters such as short circuit current density, open circuit voltage, fill factor and power conversion efficiency were calculated at different incident light intensities.

Temperature-Dependent Electrical Characteristics of Au/Si3N4/4H n-SiC MIS Diode

NASA Astrophysics Data System (ADS)

Yigiterol, F.; Güllü, H. H.; Bayraklı, Ö.; Yıldız, D. E.

2018-03-01

Electrical characteristics of the Au/Si3N4/4H n-SiC metal-insulator-semiconductor (MIS) diode were investigated under the temperature, T , interval of 160-400 K using current-voltage (I-V), capacitance-voltage ( C {-} V ) and conductance-voltage ( G/ω {-} V ) measurements. Firstly, the Schottky diode parameters as zero-bias barrier height ( Φ_{B0} ) and ideality factor ( n ) were calculated according to the thermionic emission (TE) from forward bias I-V analysis in the whole working T . Experimental results showed that the values of Φ_{B0} were in increasing behavior with increasing T while n values decreased with inverse proportionality in n versus Φ_{{{{B}}0}} plot. Therefore, the non-ideal I-V behavior with inhomogeneous barrier height (BH) formation has been discussed under the assumption of Gaussian distribution (GD). From the GD of BHs, the mean BH was found to be about 1.40 eV with 0.1697 standard deviation and the modified Richardson constant A^{*} of this diode was obtained as 141.65 A/cm2 K2 in good agreement with the literature (the theoretical value of A^{*} is 137.21 A/cm2 K2). The relationship between Φ_{B0} and n showed an abnormal I-V behavior depending on T , and it was modeled by TE theory with GD of BH due to the effect in inhomogeneous BH at the interface. Secondly, according to Cheung's model, series resistance, R_{{S}} values were calculated in the T range of 160-400 K and these values were found to decrease with increasing T . Finally, the density of interface states, D_{{it}} was calculated and the T dependence of energy distribution of D_{{it}} profiles determined the forward I {-} V measurements by taking into account the bias dependence of the effective BH, Φ_{{e}} and n . D_{{it}} were also calculated according to the Hill-Coleman method from C {-} V and G/ω {-} V analysis. Furthermore, the variation of D_{{it}} as a function of frequency, f and T were determined.

A high speed PE-ALD ZnO Schottky diode rectifier with low interface-state density

NASA Astrophysics Data System (ADS)

Jin, Jidong; Zhang, Jiawei; Shaw, Andrew; Kudina, Valeriya N.; Mitrovic, Ivona Z.; Wrench, Jacqueline S.; Chalker, Paul R.; Balocco, Claudio; Song, Aimin; Hall, Steve

2018-02-01

Zinc oxide (ZnO) has recently attracted attention for its potential application to high speed electronics. In this work, a high speed Schottky diode rectifier was fabricated based on a ZnO thin film deposited by plasma-enhanced atomic layer deposition and a PtOx Schottky contact deposited by reactive radio-frequency sputtering. The rectifier shows an ideality factor of 1.31, an effective barrier height of 0.79 eV, a rectification ratio of 1.17  ×  107, and cut-off frequency as high as 550 MHz. Low frequency noise measurements reveal that the rectifier has a low interface-state density of 5.13  ×  1012 cm-2 eV-1, and the noise is dominated by the mechanism of a random walk of electrons at the PtO x /ZnO interface. The work shows that the rectifier can be used for both noise sensitive and high frequency electronics applications.

Two-diode behavior in metal-ferroelectric-semiconductor structures with bismuth titanate interfacial layer

NASA Astrophysics Data System (ADS)

Durmuş, Perihan; Altindal, Şemsettin

2017-10-01

In this study, electrical parameters of the Al/Bi4Ti3O12/p-Si metal-ferroelectric-semiconductor (MFS) structure and their temperature dependence were investigated using current-voltage (I-V) data measured between 120 K and 300 K. Semi-logarithmic I-V plots of the structure revealed that fabricated structure presents two-diode behavior that leads to two sets of ideality factor, reverse saturation current and zero-bias barrier height (BH) values. Obtained results of these parameters suggest that current conduction mechanism (CCM) deviates strongly from thermionic emission theory particularly at low temperatures. High values of interface states and nkT/q-kT/q plot supported the idea of deviation from thermionic emission. In addition, ln(I)-ln(V) plots suggested that CCM varies from one bias region to another and depends on temperature as well. Series resistance values were calculated using Ohm’s law and Cheungs’ functions, and they decreased drastically with increasing temperature.

A new structural approach for uniform sub-micrometer anode metallization of planar THz Schottky components

NASA Astrophysics Data System (ADS)

Cojocari, O.; Mottet, B.; Rodriguez-Girones, M.; Biber, S.; Marchand, L.; Schmidt, L.-P.; Hartnagel, H. L.

2004-03-01

This paper presents the evaluation of a Schottky contact technology based on electrochemical metal deposition. The results of a long-term systematic investigation and optimization of the anode formation process to improve the yield and performance of Schottky-based GaAs mixer diodes are detailed. Surface preparation prior to the Schottky-metal deposition and anode metallization as previously optimized for whisker-contacted diodes are successfully transferred to the fabrication of planar structures. This uses an auxiliary honeycomb array of anode-like structures called 'dummy anodes', which are processed simultaneously with the real anodes and then removed in the later technological processes. Consequently, the scattering of planar diodes electrical parameters is significantly reduced and the yield of the fabrication process increases from about 5% up to about 50%. Very good dc characteristics such as series resistance (Rs) below 8 OHgr, ideality factor (eegr) below 1.2 and saturation current (Isat) of the order of 10-17A are achieved for the anode diameter as small as 1 µm. An excellent IF-noise figure of 250 K at 4.8 GHz up to 280 K at 2.1 GHz with current bias up to 3 mA is obtained for non-cooled THz mixer planar diodes. The use of this technological approach has enabled the extraction of statistically significant data which have been used to characterize the criticality of each step of the fabrication process on the device performance.

Vertical transport in isotype InAlN/GaN dipole induced diodes grown by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Fireman, M. N.; Li, Haoran; Keller, Stacia; Mishra, Umesh K.; Speck, James S.

2017-05-01

InAlN dipole diodes were developed and fabricated on both (0001) Ga-Face and (" separators="| 000 1 ¯) N-face oriented GaN on sapphire templates by molecular beam epitaxy. The orientation and direction of the InAlN polarization dipole are functions of the substrate orientation and composition, respectively. Special consideration was taken to minimize growth differences and impurity uptake during growth on these orientations of opposite polarity. Comparison of devices on similarly grown structures with In compositions in excess of 50% reveals that dipole diodes shows poorer forward bias performance and exhibited an increase in reverse bias leakage, regardless of orientation. Similarly, (0001) Ga-face oriented InAlN at a lowered 40% In composition had poor device characteristics, namely, the absence of expected exponential turn on in forward bias. By contrast, at In compositions close to 40%, (" separators="| 000 1 ¯) N-face oriented InAlN devices had excellent performance, with over five orders of magnitude of rectification and extracted barrier heights of 0.53- 0.62 eV; these values are in close agreement with simulation. Extracted ideality factors ranging from 1.08 to 1.38 on these devices are further evidence of their optimal performance. Further discussion focuses on the growth and orientation conditions that may lead to this discrepancy yet emphasizes that with proper design and growth strategy, the rectifying dipole diodes can be achieved with InAlN nitride dipole layers.

Humidity influenced capacitance and resistance of an Al/DNA/Al Schottky diode irradiated by alpha particles

PubMed Central

Al-Ta’ii, Hassan Maktuff Jaber; Amin, Yusoff Mohd; Periasamy, Vengadesh

2016-01-01

Deoxyribonucleic acid or DNA based sensors, especially as humidity and alpha particle sensors have become quite popular in recent times due to flexible and highly optimizable nature of this fundamental biomaterial. Application of DNA electronics allow for more sensitive, accurate and effective sensors to be developed and fabricated. In this work, we examined the effect of different humidity conditions on the capacitive and resistive response of Aluminum (Al)/DNA/Al Schottky barrier structure when bombarded by time-dependent dosages of alpha particles. Based on current-voltage profiles, which demonstrated rectifying behaviours, Schottky diode parameters such as ideality factor, barrier height and series resistance was calculated. Results observed generally pointed towards a decrease in the resistance value from the pristine to the radiated structures. It was also demonstrated that under the effect of humidity, the capacitance of the DNA thin film increased from 0.05894 to 92.736 nF, with rising relative humidity level. We also observed the occurrence of the hypersensitivity phenomena after alpha irradiation between 2 to 4 min by observing a drop in the series resistance, crucial in the study of DNA damage and repair mechanisms. These observations may also suggest the exciting possibility of utilizing Al/DNA/Al Schottky diodes as potentially sensitive humidity sensors. PMID:27160654

Junctionless Diode Enabled by Self-Bias Effect of Ion Gel in Single-Layer MoS2 Device.

PubMed

Khan, Muhammad Atif; Rathi, Servin; Park, Jinwoo; Lim, Dongsuk; Lee, Yoontae; Yun, Sun Jin; Youn, Doo-Hyeb; Kim, Gil-Ho

2017-08-16

The self-biasing effects of ion gel from source and drain electrodes on electrical characteristics of single layer and few layer molybdenum disulfide (MoS 2 ) field-effect transistor (FET) have been studied. The self-biasing effect of ion gel is tested for two different configurations, covered and open, where ion gel is in contact with either one or both, source and drain electrodes, respectively. In open configuration, the linear output characteristics of the pristine device becomes nonlinear and on-off ratio drops by 3 orders of magnitude due to the increase in "off" current for both single and few layer MoS 2 FETs. However, the covered configuration results in a highly asymmetric output characteristics with a rectification of around 10 3 and an ideality factor of 1.9. This diode like behavior has been attributed to the reduction of Schottky barrier width by the electric field of self-biased ion gel, which enables an efficient injection of electrons by tunneling at metal-MoS 2 interface. Finally, finite element method based simulations are carried out and the simulated results matches well in principle with the experimental analysis. These self-biased diodes can perform a crucial role in the development of high-frequency optoelectronic and valleytronic devices.

Can small field diode correction factors be applied universally?

PubMed

Liu, Paul Z Y; Suchowerska, Natalka; McKenzie, David R

2014-09-01

Diode detectors are commonly used in dosimetry, but have been reported to over-respond in small fields. Diode correction factors have been reported in the literature. The purpose of this study is to determine whether correction factors for a given diode type can be universally applied over a range of irradiation conditions including beams of different qualities. A mathematical relation of diode over-response as a function of the field size was developed using previously published experimental data in which diodes were compared to an air core scintillation dosimeter. Correction factors calculated from the mathematical relation were then compared those available in the literature. The mathematical relation established between diode over-response and the field size was found to predict the measured diode correction factors for fields between 5 and 30 mm in width. The average deviation between measured and predicted over-response was 0.32% for IBA SFD and PTW Type E diodes. Diode over-response was found to be not strongly dependent on the type of linac, the method of collimation or the measurement depth. The mathematical relation was found to agree with published diode correction factors derived from Monte Carlo simulations and measurements, indicating that correction factors are robust in their transportability between different radiation beams. Copyright © 2014. Published by Elsevier Ireland Ltd.

Influence of temperature on Al/p-CuInAlSe2 thin-film Schottky diodes

NASA Astrophysics Data System (ADS)

Parihar, Usha; Ray, Jaymin; Panchal, C. J.; Padha, Naresh

2016-06-01

Al/p-CuInAlSe2 Schottky diodes were fabricated using the optimized thin layers of CuInAlSe2 semiconductor. These diodes were used to study their temperature-dependent current-voltage (I-V) and capacitance-voltage (C-V) analysis over a wide range of 233-353 K. Based on these measurements, diode parameters such as ideality factor ( η), barrier height (ϕbo) and series resistance ( R s) were determined from the downward curvature of I-V characteristics using Cheung and Cheung method. The extracted parameters were found to be strongly temperature dependent; ϕbo increases, while η and R s decrease with increasing temperature. This behavior of ϕbo and η with change in temperature has been explained on the basis of barrier inhomogeneities over the MS interface by assuming a Gaussian distribution (GD) of the ϕbo at the interface. GD of barrier height (BH) was confirmed from apparent BH (ϕap) versus q/2 kT plot, and the values of the mean BH and standard deviation (σs) obtained from this plot at zero bias were found to be 1.02 and 0.14 eV, respectively. Also, a modified ln ( {J_{{s}} /T2 } ) - q2 σ_{{s}}2 /2k2 T2 versus q/ kT plot for Al/p-CuInAlSe2 Schottky diodes according to the GD gives ϕbo and Richardson constant ( A ** ) as 1.01 eV and 26 Acm-2 K-2, respectively. The Richardson constant value of 26 Acm-2 K-2 is very close to the theoretical value of 30 Acm-2 K-2. The discrepancy between BHs obtained from I-V and C-V measurements has also been interpreted.

Random laser illumination: an ideal source for biomedical polarization imaging?

NASA Astrophysics Data System (ADS)

Carvalho, Mariana T.; Lotay, Amrit S.; Kenny, Fiona M.; Girkin, John M.; Gomes, Anderson S. L.

2016-03-01

Imaging applications increasingly require light sources with high spectral density (power over spectral bandwidth. This has led in many cases to the replacement of conventional thermal light sources with bright light-emitting diodes (LEDs), lasers and superluminescent diodes. Although lasers and superluminescent diodes appear to be ideal light sources due to their narrow bandwidth and power, however, in the case of full-field imaging, their spatial coherence leads to coherent artefacts, such as speckle, that corrupt the image. LEDs, in contrast, have lower spatial coherence and thus seem the natural choice, but they have low spectral density. Random Lasers are an unconventional type of laser that can be engineered to provide low spatial coherence with high spectral density. These characteristics makes them potential sources for biological imaging applications where specific absorption and reflection are the characteristics required for state of the art imaging. In this work, a Random Laser (RL) is used to demonstrate speckle-free full-field imaging for polarization-dependent imaging in an epi-illumination configuration. We compare LED and RL illumination analysing the resulting images demonstrating that the RL illumination produces an imaging system with higher performance (image quality and spectral density) than that provided by LEDs.

Modeling of the Electric Characteristics of Solar Cells

NASA Astrophysics Data System (ADS)

Logan, Benjamin; Tzolov, Marian

The purpose of a solar cell is to covert solar energy, through means of photovoltaic action, into a sustainable electrical current that produces usable electricity. The electrical characteristics of solar cells can be modeled to better understand how they function. As an electrical device, solar cells can be conveniently represented as an equivalent electrical circuit with an ideal diode, ideal current source for the photovoltaic action, a shunt resistor for recombination, a resistor in series to account for contact resistance, and a resistor modeling external power consumption. The values of these elements have been modified to model dark and illumination states. Fitting the model to the experimental current voltage characteristics allows to determine the values of the equivalent circuit elements. Comparing values of open circuit voltage, short circuit current, and shunt resistor can determine factors such as the amount of recombination to diagnose problems in solar cells. The many measurable quantities of a solar cell's characteristics give guidance for the design when they are related with microscopic processes.

Large Work Function Modulation of Monolayer MoS2 by Ambient Gases.

PubMed

Lee, Si Young; Kim, Un Jeong; Chung, JaeGwan; Nam, Honggi; Jeong, Hye Yun; Han, Gang Hee; Kim, Hyun; Oh, Hye Min; Lee, Hyangsook; Kim, Hyochul; Roh, Young-Geun; Kim, Jineun; Hwang, Sung Woo; Park, Yeonsang; Lee, Young Hee

2016-06-28

Although two-dimensional monolayer transition-metal dichalcogenides reveal numerous unique features that are inaccessible in bulk materials, their intrinsic properties are often obscured by environmental effects. Among them, work function, which is the energy required to extract an electron from a material to vacuum, is one critical parameter in electronic/optoelectronic devices. Here, we report a large work function modulation in MoS2 via ambient gases. The work function was measured by an in situ Kelvin probe technique and further confirmed by ultraviolet photoemission spectroscopy and theoretical calculations. A measured work function of 4.04 eV in vacuum was converted to 4.47 eV with O2 exposure, which is comparable with a large variation in graphene. The homojunction diode by partially passivating a transistor reveals an ideal junction with an ideality factor of almost one and perfect electrical reversibility. The estimated depletion width obtained from photocurrent mapping was ∼200 nm, which is much narrower than bulk semiconductors.

Exploiting absorption-induced self-heating in solar cells (Conference Presentation)

NASA Astrophysics Data System (ADS)

Ullbrich, Sascha; Fischer, Axel; Erdenebileg, Enkhtur; Koerner, Christian; Reineke, Sebastian; Leo, Karl; Vandewal, Koen

2017-04-01

Absorption of light inevitably leads to a self-heating of each type of solar cell, either due to the excess energy of absorbed photons or non-radiative recombination of charge carriers. Although the effect of temperature on solar cell parameters such as the open-circuit voltage are well known, it is often ignored in Suns-Voc measurements [1]. This measurement technique enables direct access to the diode ideality factor without an influence by series resistance. A frequently seen decrease of the ideality factor or a saturation of the open-circuit voltage at high illumination intensities is often attributed solely to surface recombination [2], the shape of the density of states (DOS) [3], or the quality of the back contact in inorganic solar cells [4]. In this work, we present an analytical model for taking into account absorption induced self-heating in Suns-Voc measurements and validate it for various solar cell technologies such as small molecule organic solar cells, perovskite solar cells, and inorganic solar cells. Furthermore, with an adapted Suns-Voc technique, we are able to not only correctly determine the ideality factor, but also the relevant energy gap of the solar cell, which is especially of interest in the field of novel solar cell technologies. [1] R.A. Sinton and A. Cuevas, EU PVSEC, 1152-1155 (2000) [2] K. Tvingstedt and C. Deibel, Adv. Energy Mater. 6, 1502230 (2016) [3] T. Kirchartz and J. Nelson, Phys. Rev. B 86, 165201 (2012) [4] S. Glunz, J. Nekarda, H. Maeckel et al., EU PVSEC, 849-853 (2007)

Low-temperature performance of semiconducting asymmetric nanochannel diodes

NASA Astrophysics Data System (ADS)

Akbas, Y.; Savich, G. R.; Jukna, A.; Plecenik, T.; Ďurina, P.; Plecenik, A.; Wicks, G. W.; Sobolewski, Roman

2017-10-01

We present our studies on fabrication and electrical and optical characterization of semiconducting asymmetric nanochannel diodes (ANCDs), focusing mainly on the temperature dependence of their current-voltage (I-V) characteristics in the range from room temperature to 77 K. These measurements enable us to elucidate the electron transport mechanism in a nanochannel. Our test devices were fabricated in a GaAs/AlGaAs heterostructure with a two-dimensional electron gas layer and were patterned using electron-beam lithography. The 250-nm-wide, 70-nm-deep trenches that define the nanochannel were ion-beam etched using the photoresist as a mask, so the resulting nanostructure consisted of approximately ten ANCDs connected in parallel with 2-µm-long, 230-nm-wide nanochannels. The ANCD I-V curves collected in the dark exhibited nonlinear, diode-type behavior at all tested temperatures. Their forward-biased regions were fitted to the classical diode equation with a thermionic barrier, with the ideality factor n and the saturation current as fitting parameters. We have obtained very good fits, but with n as large as ˜50, suggesting that there must be a substantial voltage drop likely at the contact pads. The thermionic energy barrier was determined to be 56 meV at high temperatures. We have also observed that under optical illumination our ANCDs at low temperatures exhibited, at low illumination powers, a very strong photoresponse enhancement that exceeded that at room temperature. At 78 K, the responsivity was of the order of 104 A/W at the nW-level light excitation.

Electrical properties of Schottky barrier diodes fabricated on (001) β-Ga2O3 substrates with crystal defects

NASA Astrophysics Data System (ADS)

Oshima, Takayoshi; Hashiguchi, Akihiro; Moribayashi, Tomoya; Koshi, Kimiyoshi; Sasaki, Kohei; Kuramata, Akito; Ueda, Osamu; Oishi, Toshiyuki; Kasu, Makoto

2017-08-01

The electrical properties of Schottky barrier diodes (SBDs) on a (001) β-Ga2O3 substrate were characterized and correlated with wet etching-revealed crystal defects below the corresponding Schottky contacts. The etching process revealed etched grooves and etched pits, indicating the presence of line-shaped voids and small defects near the surface, respectively. The electrical properties (i.e., leakage currents, ideality factor, and barrier height) exhibited almost no correlation with the density of the line-shaped voids. This very weak correlation was reasonable considering the parallel positional relation between the line-shaped voids extending along the [010] direction and the (001) basal plane in which the voids are rarely exposed on the initial surface in contact with the Schottky metals. The distribution of small defects and SBDs with unusually large leakage currents showed similar patterns on the substrate, suggesting that these defects were responsible for the onset of fatal leak paths. These results will encourage studies on crystal defect management of (001) β-Ga2O3 substrates for the fabrication of devices with enhanced performance using these substrates.

Characterization of a SiC MIS Schottky diode as RBS particle detector

NASA Astrophysics Data System (ADS)

Kaufmann, I. R.; Pick, A. C.; Pereira, M. B.; Boudinov, H. I.

2018-02-01

A 4H-SiC Schottky diode was investigated as a particle detector for Rutherford Backscattering Spectroscopy (RBS) experiment. The device was fabricated on a commercial 4H-SiC epitaxial n-type layer grown onto a 4H-SiC n+ type substrate wafer doped with nitrogen. Hafnium oxide with thickness of 1 nm was deposited by Atomic Layer Deposition and 10 nm of Ni were deposited by sputtering to form the Ni/HfO2/4H-SiC MIS Schottky structure. Current-Voltage curves with variable temperature were measured to extract the real Schottky Barrier Height (0.32 V) and ideality factor values (1.15). Reverse current and Capacitance-Voltage measurements were performed on the 4H-SiC detector and compared to a commercial Si barrier detector acquired from ORTEC. RBS data for four alpha energies (1, 1.5, 2 and 2.5 MeV) were collected from an Au/Si sample using the fabricated SiC and the commercial Si detectors simultaneously. The energy resolution for the fabricated detector was estimated to be between 75 and 80 keV.

Photon Reabsorption in Mixed CsPbCl3:CsPbI3 Perovskite Nanocrystal Films for Light-Emitting Diodes

PubMed Central

2017-01-01

Cesium lead halide nanocrystals, CsPbX3 (X = Cl, Br, I), exhibit photoluminescence quantum efficiencies approaching 100% without the core–shell structures usually used in conventional semiconductor nanocrystals. These high photoluminescence efficiencies make these crystals ideal candidates for light-emitting diodes (LEDs). However, because of the large surface area to volume ratio, halogen exchange between perovskite nanocrystals of different compositions occurs rapidly, which is one of the limiting factors for white-light applications requiring a mixture of different crystal compositions to achieve a broad emission spectrum. Here, we use mixtures of chloride and iodide CsPbX3 (X = Cl, I) perovskite nanocrystals where anion exchange is significantly reduced. We investigate samples containing mixtures of perovskite nanocrystals with different compositions and study the resulting optical and electrical interactions. We report excitation transfer from CsPbCl3 to CsPbI3 in solution and within a poly(methyl methacrylate) matrix via photon reabsorption, which also occurs in electrically excited crystals in bulk heterojunction LEDs. PMID:28316756

Modeling of hysteretic Schottky diode-like conduction in Pt/BiFeO3/SrRuO3 switches

NASA Astrophysics Data System (ADS)

Miranda, E.; Jiménez, D.; Tsurumaki-Fukuchi, A.; Blasco, J.; Yamada, H.; Suñé, J.; Sawa, A.

2014-08-01

The hysteresis current-voltage (I-V) loops in Pt/BiFeO3/SrRuO3 structures are simulated using a Schottky diode-like conduction model with sigmoidally varying parameters, including series resistance correction and barrier lowering. The evolution of the system is represented by a vector in a 3D parameter space describing a closed trajectory with stationary states. It is shown that the hysteretic behavior is not only the result of a Schottky barrier height (SBH) variation arising from the BiFeO3 polarization reversal but also a consequence of the potential drop distribution across the device. The SBH modulation is found to be remarkably lower (<0.07 eV) than previously reported (>0.5 eV). It is also shown that the p-type semiconducting nature of BiFeO3 can explain the large ideality factors (>6) required to simulate the I-V curves as well as the highly asymmetric set and reset voltages (4.7 V and -1.9 V) exhibited by our devices.

Study of the characteristics current-voltage and capacitance-voltage in nitride GaAs Schottky diode

NASA Astrophysics Data System (ADS)

Rabehi, Abdelaziz; Amrani, Mohamed; Benamara, Zineb; Akkal, Boudali; Hatem-Kacha, Arslane; Robert-Goumet, Christine; Monier, Guillaume; Gruzza, Bernard

2015-10-01

This article reports the study of Au/GaN/GaAs Schottky diodes, where the thin GaN film is prepared by nitridation of GaAs substrates with thicknesses of 0.7 and 0.8 nm. The resulting GaN sample with thickness 0.8 nm is then treated with an annealing operation (heating to 620 °C) to improve the current transport. The current-voltage (I-V) and capacitance-voltage (C-V) of the Au/GaN/GaAs structures were investigated at room temperature. In fact, the I-V characteristics show that the annealed sample has low series resistance (Rs) and ideality factor (n) (63 Ω, 2.27 respectively) when compared to the values obtained in the untreated sample (1.83 kΩ, 3.31 respectively). The formation of the GaN layer on the gallium arsenide surface is investigated through calculation of the interface state density NSS with and without the presence of series resistance Rs. The value of the interface state density NSS(E) close to the mid-gap was estimated to be in the order of 4.7×1012 cm-2 eV-1 and 1.02× 1013 cm-2 eV-1 with and without the annealing operation, respectively. However, nitridation with the annealing operation at 620 °C improves the electrical properties of the resultant Schottky diode.

An all-perovskite p-n junction based on transparent conducting p -La 1-x Sr x CrO 3 epitaxial layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Du, Yingge; Li, Chen; Zhang, Kelvin H. L.

2017-08-07

Transparent, conducting p -La 1-x Sr x CrO 3 epitaxial layers were deposited on Nb-doped SrTiO 3(001) by oxygen-assisted molecular beam epitaxy to form structurally coherent p-n junctions. X-ray photoelectron spectroscopy reveals a type II or “staggered” band alignment, with valence and conduction band offsets of 2.0 eV and 0.9 eV, respectively. Diodes fabricated from these heterojunctions exhibit rectifying behavior, and the I-V characteristics are different from those for traditional semiconductor p-n junctions. A rather large ideality factor is ascribed to the complex nature of the interface.

Rectifying properties of p-GaN nanowires and an n-silicon heterojunction vertical diode.

PubMed

Manna, Sujit; Ashok, Vishal D; De, S K

2010-12-01

The heterojunction of a Pd-doped p-GaN nanowire and n-Si (100) is fabricated vertically by the vapor-liquid-solid method. The average diameter of the nanowire is 40 nm. The vertical junction reveals a significantly high rectification ratio of 10(3) at 5 V, a moderate ideality factor of ∼2, and a high breakdown voltage of ∼40 V. The charge transport across the p-n junction is dominated by the electron-hole recombination process. The voltage dependence of capacitance indicates a graded-type junction. The resistance of the junction decreases with an increase in the bias voltage confirmed by impedance measurements.

SEMICONDUCTOR TECHNOLOGY: SBH adjustment characteristic of the dopant segregation process for NiSi/n-Si SJDs

NASA Astrophysics Data System (ADS)

Haiping, Shang; Qiuxia, Xu

2010-05-01

By means of analyzing the I-V characteristic curve of NiSi/n-Si Schottky junction diodes (NiSi/n-Si SJDs), abstracting the effective Schottky barrier height (varphiB, eff) and the ideal factor of NiSi/n-Si SJDs and measuring the sheet resistance of NiSi films (RNiSi), we study the effects of different dopant segregation process parameters, including impurity implantation dose, segregation annealing temperature and segregation annealing time, on the varphiB, eff of NiSi/n-Si SJDs and the resistance characteristic of NiSi films. In addition, the changing rules of varphiB, eff and RNiSi are discussed.

Suns-VOC characteristics of high performance kesterite solar cells

NASA Astrophysics Data System (ADS)

Gunawan, Oki; Gokmen, Tayfun; Mitzi, David B.

2014-08-01

Low open circuit voltage (VOC) has been recognized as the number one problem in the current generation of Cu2ZnSn(Se,S)4 (CZTSSe) solar cells. We report high light intensity and low temperature Suns-VOC measurement in high performance CZTSSe devices. The Suns-VOC curves exhibit bending at high light intensity, which points to several prospective VOC limiting mechanisms that could impact the VOC, even at 1 sun for lower performing samples. These VOC limiting mechanisms include low bulk conductivity (because of low hole density or low mobility), bulk or interface defects, including tail states, and a non-ohmic back contact for low carrier density CZTSSe. The non-ohmic back contact problem can be detected by Suns-VOC measurements with different monochromatic illuminations. These limiting factors may also contribute to an artificially lower JSC-VOC diode ideality factor.

Synergetic electrode architecture for efficient graphene-based flexible organic light-emitting diodes

PubMed Central

Lee, Jaeho; Han, Tae-Hee; Park, Min-Ho; Jung, Dae Yool; Seo, Jeongmin; Seo, Hong-Kyu; Cho, Hyunsu; Kim, Eunhye; Chung, Jin; Choi, Sung-Yool; Kim, Taek-Soo; Lee, Tae-Woo; Yoo, Seunghyup

2016-01-01

Graphene-based organic light-emitting diodes (OLEDs) have recently emerged as a key element essential in next-generation displays and lighting, mainly due to their promise for highly flexible light sources. However, their efficiency has been, at best, similar to that of conventional, indium tin oxide-based counterparts. We here propose an ideal electrode structure based on a synergetic interplay of high-index TiO2 layers and low-index hole-injection layers sandwiching graphene electrodes, which results in an ideal situation where enhancement by cavity resonance is maximized yet loss to surface plasmon polariton is mitigated. The proposed approach leads to OLEDs exhibiting ultrahigh external quantum efficiency of 40.8 and 62.1% (64.7 and 103% with a half-ball lens) for single- and multi-junction devices, respectively. The OLEDs made on plastics with those electrodes are repeatedly bendable at a radius of 2.3 mm, partly due to the TiO2 layers withstanding flexural strain up to 4% via crack-deflection toughening. PMID:27250743

Synergetic electrode architecture for efficient graphene-based flexible organic light-emitting diodes.

PubMed

Lee, Jaeho; Han, Tae-Hee; Park, Min-Ho; Jung, Dae Yool; Seo, Jeongmin; Seo, Hong-Kyu; Cho, Hyunsu; Kim, Eunhye; Chung, Jin; Choi, Sung-Yool; Kim, Taek-Soo; Lee, Tae-Woo; Yoo, Seunghyup

2016-06-02

Graphene-based organic light-emitting diodes (OLEDs) have recently emerged as a key element essential in next-generation displays and lighting, mainly due to their promise for highly flexible light sources. However, their efficiency has been, at best, similar to that of conventional, indium tin oxide-based counterparts. We here propose an ideal electrode structure based on a synergetic interplay of high-index TiO2 layers and low-index hole-injection layers sandwiching graphene electrodes, which results in an ideal situation where enhancement by cavity resonance is maximized yet loss to surface plasmon polariton is mitigated. The proposed approach leads to OLEDs exhibiting ultrahigh external quantum efficiency of 40.8 and 62.1% (64.7 and 103% with a half-ball lens) for single- and multi-junction devices, respectively. The OLEDs made on plastics with those electrodes are repeatedly bendable at a radius of 2.3 mm, partly due to the TiO2 layers withstanding flexural strain up to 4% via crack-deflection toughening.

Zn doping induced conductivity transformation in NiO films for realization of p-n homo junction diode

NASA Astrophysics Data System (ADS)

Dewan, Sheetal; Tomar, Monika; Tandon, R. P.; Gupta, Vinay

2017-06-01

Mixed transition metal oxide, zinc doped NiO, Z n x N i 1 - x O (x = 0, 0.01, 0.02, 0.05, and 0.10), thin films have been fabricated by the RF magnetron sputtering technique in an oxygen deficit ambience at a growth temperature of 400 °C. The present report highlights the effect of Zn doping in NiO thin films on its structural, optical, and electrical properties. Optical transmission enhancement and band gap engineering in a-axis oriented NiO films have been demonstrated via Zn substitution. Hall effect measurements of the prepared samples revealed a transition from p-type to n-type conductivity in NiO at 2% Zn doping. A NiO based transparent p-n homojunction diode has been fabricated successfully, and the conduction mechanism dominating the diode properties is reported in detail. Current-voltage (I-V) characteristics of the homojunction diode are found to obey the Space Charge Limited Conduction mechanism with non-ideal square law behaviour.

Entrance dose measurements for in‐vivo diode dosimetry: Comparison of correction factors for two types of commercial silicon diode detectors

PubMed Central

Zhu, X. R.

2000-01-01

Silicon diode dosimeters have been used routinely for in‐vivo dosimetry. Despite their popularity, an appropriate implementation of an in‐vivo dosimetry program using diode detectors remains a challenge for clinical physicists. One common approach is to relate the diode readout to the entrance dose, that is, dose to the reference depth of maximum dose such as dmax for the 10×10 cm2 field. Various correction factors are needed in order to properly infer the entrance dose from the diode readout, depending on field sizes, target‐to‐surface distances (TSD), and accessories (such as wedges and compensate filters). In some clinical practices, however, no correction factor is used. In this case, a diode‐dosimeter‐based in‐vivo dosimetry program may not serve the purpose effectively; that is, to provide an overall check of the dosimetry procedure. In this paper, we provide a formula to relate the diode readout to the entrance dose. Correction factors for TSD, field size, and wedges used in this formula are also clearly defined. Two types of commercial diode detectors, ISORAD (n‐type) and the newly available QED (p‐type) (Sun Nuclear Corporation), are studied. We compared correction factors for TSDs, field sizes, and wedges. Our results are consistent with the theory of radiation damage of silicon diodes. Radiation damage has been shown to be more serious for n‐type than for p‐type detectors. In general, both types of diode dosimeters require correction factors depending on beam energy, TSD, field size, and wedge. The magnitudes of corrections for QED (p‐type) diodes are smaller than ISORAD detectors. PACS number(s): 87.66.–a, 87.52.–g PMID:11674824

Optimized hydrogen sensing characteristic of Pd/ZnO nanoparticles based Schottky diode on glass substrate

NASA Astrophysics Data System (ADS)

Chandra, Lalit; Sahu, Praveen Kumar; Dwivedi, R.; Mishra, V. N.

2017-10-01

The present work deals with the development of the Pd/ZnO naoparticles based sensor for detection of hydrogen (H2) gas at relatively low temperature (75-110 °C). Pd/ZnO Schottky diode was fabricated by ZnO nanoparticles based thin film on glass substrate using sol-gel spin coating technique. These ZnO nanoparticles have been characterized by x-ray diffraction (XRD), atomic force microscopy (AFM), energy dispersive x-ray spectroscope (EDS), and field emission scanning electron microscope (FE-SEM) which reveals the ZnO film having particles size in the range of ~25 to ~110 nm with ~52.73 nm surface roughness. Gas dependent diode parameters such as barrier height and ideality factor have been evaluated upon exposure of H2 gas concentration in the range from 200-2000 ppm over the temperature range from 75 to 110 °C. The sensitivity of the Pd/ZnO sensor has been studied in terms of change in diode forward current upon exposure to H2 gas. Experimental result shows the optimized sensitivity ~246.22% for H2 concentration of 2000 ppm at temperature 90 °C. The hydrogen sensing mechanism has been explained by surface and subsurface adsorption of H2 molecules on Pd surface; subsequently, dissociation of H2 molecules into H  +  H atoms and diffusion to trap sites (oxygen ions) available on ZnO surface, resulting in formation of dipole moments at Pd/ZnO interface. The variation in the sensitivity, response and recovery time with temperature of Pd/ZnO sensor has also been studied.

Schottky barrier diode based on β-Ga2O3 (100) single crystal substrate and its temperature-dependent electrical characteristics

NASA Astrophysics Data System (ADS)

He, Qiming; Mu, Wenxiang; Dong, Hang; Long, Shibing; Jia, Zhitai; Lv, Hangbing; Liu, Qi; Tang, Minghua; Tao, Xutang; Liu, Ming

2017-02-01

The Pt/β-Ga2O3 Schottky barrier diode and its temperature-dependent current-voltage characteristics were investigated for power device application. The edge-defined film-fed growth (EFG) technique was utilized to grow the (100)-oriented β-Ga2O3 single crystal substrate that shows good crystal quality characterized by X-ray diffraction and high resolution transmission electron microscope. Ohmic and Schottky electrodes were fabricated by depositing Ti and Pt metals on the two surfaces, respectively. Through the current-voltage (I-V) measurement under different temperature and the thermionic emission modeling, the fabricated Pt/β-Ga2O3 Schottky diode was found to show good performances at room temperature, including rectification ratio of 1010, ideality factor (n) of 1.1, Schottky barrier height (ΦB) of 1.39 eV, threshold voltage (Vbi) of 1.07 V, ON-resistance (RON) of 12.5 mΩ.cm2, forward current density at 2 V (J@2V) of 56 A/cm2, and saturation current density (J0) of 2 × 10-16 A/cm2. The effective donor concentration Nd - Na was calculated to be about 2.3 × 1014 cm3. Good temperature dependent performance was also found in the device. The Schottky barrier height was estimated to be about 1.3 eV-1.39 eV at temperatures ranging from room temperature to 150 °C. With increasing temperature, parameters such as RON and J@2V become better, proving that the diode can work well at high temperature. The EFG grown β-Ga2O3 single crystal is a promising material to be used in the power devices.

Monolayer graphene/SiC Schottky barrier diodes with improved barrier height uniformity as a sensing platform for the detection of heavy metals

PubMed Central

Eriksson, Jens; Khranovskyy, Volodymyr; Iakimov, Tihomir; Lloyd Spetz, Anita; Yakimova, Rositsa

2016-01-01

A vertical diode structure comprising homogeneous monolayer epitaxial graphene on silicon carbide is fabricated by thermal decomposition of a Si-face 4H-SiC wafer in argon atmosphere. Current–voltage characteristics of the graphene/SiC Schottky junction were analyzed by applying the thermionic-emission theory. Extracted values of the Schottky barrier height and the ideality factor are found to be 0.4879 ± 0.013 eV and 1.01803 ± 0.0049, respectively. Deviations of these parameters from average values are smaller than those of previously observed literature data, thereby implying uniformity of the Schottky barrier height over the whole diode area, a stable rectifying behaviour and a good quality of ohmic palladium–graphene contacts. Keeping in mind the strong sensitivity of graphene to analytes we propose the possibility to use the graphene/SiC Schottky diode as a sensing platform for the recognition of toxic heavy metals. Using density functional theory (DFT) calculations we gain insight into the nature of the interaction of cadmium, mercury and lead with graphene as well as estimate the work function and the Schottky barrier height of the graphene/SiC structure before and after applying heavy metals to the sensing material. A shift of the I–V characteristics of the graphene/SiC-based sensor has been proposed as an indicator of presence of the heavy metals. Since the calculations suggested the strongest charge transfer between Pb and graphene, the proposed sensing platform was characterized by good selectivity towards lead atoms and slight interferences from cadmium and mercury. The dependence of the sensitivity parameters on the concentration of Cd, Hg and Pb is studied and discussed. PMID:28144530

Monolayer graphene/SiC Schottky barrier diodes with improved barrier height uniformity as a sensing platform for the detection of heavy metals.

PubMed

Shtepliuk, Ivan; Eriksson, Jens; Khranovskyy, Volodymyr; Iakimov, Tihomir; Lloyd Spetz, Anita; Yakimova, Rositsa

2016-01-01

A vertical diode structure comprising homogeneous monolayer epitaxial graphene on silicon carbide is fabricated by thermal decomposition of a Si-face 4H-SiC wafer in argon atmosphere. Current-voltage characteristics of the graphene/SiC Schottky junction were analyzed by applying the thermionic-emission theory. Extracted values of the Schottky barrier height and the ideality factor are found to be 0.4879 ± 0.013 eV and 1.01803 ± 0.0049, respectively. Deviations of these parameters from average values are smaller than those of previously observed literature data, thereby implying uniformity of the Schottky barrier height over the whole diode area, a stable rectifying behaviour and a good quality of ohmic palladium-graphene contacts. Keeping in mind the strong sensitivity of graphene to analytes we propose the possibility to use the graphene/SiC Schottky diode as a sensing platform for the recognition of toxic heavy metals. Using density functional theory (DFT) calculations we gain insight into the nature of the interaction of cadmium, mercury and lead with graphene as well as estimate the work function and the Schottky barrier height of the graphene/SiC structure before and after applying heavy metals to the sensing material. A shift of the I - V characteristics of the graphene/SiC-based sensor has been proposed as an indicator of presence of the heavy metals. Since the calculations suggested the strongest charge transfer between Pb and graphene, the proposed sensing platform was characterized by good selectivity towards lead atoms and slight interferences from cadmium and mercury. The dependence of the sensitivity parameters on the concentration of Cd, Hg and Pb is studied and discussed.

Next generation diode lasers with enhanced brightness

NASA Astrophysics Data System (ADS)

Ried, S.; Rauch, S.; Irmler, L.; Rikels, J.; Killi, A.; Papastathopoulos, E.; Sarailou, E.; Zimer, H.

2018-02-01

High-power diode lasers are nowadays well established manufacturing tools in high power materials processing, mainly for tactile welding, surface treatment and cladding applications. Typical beam parameter products (BPP) of such lasers range from 30 to 50 mm·mrad at several kilowatts of output power. TRUMPF offers a product line of diode lasers to its customers ranging from 150 W up to 6 kW of output power. These diode lasers combine high reliability with small footprint and high efficiency. However, up to now these lasers are limited in brightness due to the commonly used spatial and coarse spectral beam combining techniques. Recently diode lasers with enhanced brightness have been presented by use of dense wavelength multiplexing (DWM). In this paper we report on TRUMPF's diode lasers utilizing DWM. We demonstrate a 2 kW and a 4 kW system ideally suited for fine welding and scanner welding applications. The typical laser efficiency is in the range of 50%. The system offers plug and play exchange of the fiber beam delivery cable, multiple optical outputs and integrated cooling in a very compact package. An advanced control system offers flexible integration in any customer's shop floor environment and includes industry 4.0 capabilities (e.g. condition monitoring and predictive maintenance).

Substrate bias induced synthesis of flowered-like bunched carbon nanotube directly on bulk nickel

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bisht, Atul; Academy of Scientific and Innovative Research; Chockalingam, S.

2016-02-15

Highlights: • Flowered-like bunched MWCNTs have been synthesized by MW PECVD technique. • Effect of substrate bias on the properties of MWCNT has been studied. • Minimum E{sub T} = 1.9 V/μm with β = 4770 has been obtained in the film deposited at −350 V. - Abstract: This paper reports the effect of substrate bias on the multiwalled carbon nanotube (MWCNT) deposited on nickel foil by microwave plasma enhanced chemical vapor deposition technique. The MWCNTs have been characterized by the scanning electron microscopy (SEM), high resolution transmission electron microscopy (HRTEM), Raman spectroscopy, field emission and current–voltage characteristic of themore » heterojunction diode. The SEM images exhibit unique hierarchical flowered-like bunched and conformally coated MWCNTs. Substrate bias induced ion bombardment helps in the enhancement of hydrocarbon dissociation and is responsible for flowered-like MWCNTs growth. The HRTEM micrographs show the base growth mechanism for MWCNTs. The value of turn on field for emission decreases from 5.5 to 1.9 V/μm and field enhancement factor increases from 927 to 4770, respectively, with the increase of substrate bias. The diode ideality factor of CNT/ n-Si heterojunction is evaluated as 2.4 and the on/off current ratio is found to be 7 at ±2 V, respectively.« less

The synthesis of SrTiO3 nanocubes and the analysis of nearly ideal diode application of Ni/SrTiO3 nanocubes/n-Si heterojunctions

NASA Astrophysics Data System (ADS)

Bilal Taşyürek, Lütfi; Sevim, Melike; Çaldıran, Zakir; Aydogan, Sakir; Metin, Önder

2018-01-01

A perovskite type of strontium titanate (SrTiO3) nanocubes (NCs) were synthesized by using a hydrothermal process and the thin films of these NCs were deposited on an n-type silicon wafer by spin coating technique. As-synthesized SrTiO3 NCs were characterized by transmission electron microscope, scanning electron microscope, energy dispersive x-ray, x-ray diffraction and Raman spectroscopy. After evaporation of 12 Ni dots on the SrTiO3 NCs thin films deposited on n-Si, the Ni/SrTiO3 NCs/n-Si heterojunction devices were fabricated for the first time. The ideality factors of the twelve fabricated devices were vary from 1.05 to 1.22 and the barrier height values varied from 0.64 to 0.68 eV. Furthermore, since all devices yielded similar characteristics, only the current-voltage and the capacitance-voltage of one selected device (named H1) were investigated in detailed. The series resistance of this device was calculated as 96 Ω.

Update on the use of diode laser in the management of benign prostate obstruction in 2014.

PubMed

Lusuardi, Lukas; Mitterberger, Michael; Hruby, Stephan; Kunit, Thomas; Kloss, Birgit; Engelhardt, Paul F; Sieberer, Manuela; Janetschek, Günter

2015-04-01

To determine the status quo in respect of various diode lasers and present the techniques in use, their results and complications. We assess how these compare with transurethral resection of the prostate and other types of laser in randomized controlled trials (RCTs). When adequate RCTs were not available, case studies and reports were evaluated. Laser for the treatment of benign prostatic hyperplasia (BPH) has aroused the interest and curiosity of urologists as well as patients. The patient associates the term laser with a successful and modern procedure. The journey that started with coagulative necrosis of prostatic adenoma based on neodymium: yttrium-aluminum-garnet (Nd:YAG) laser has culminated in endoscopic "enucleation" with holmium laser. Diode laser is being used in urology for about 10 years now. Various techniques have been employed to relieve bladder outlet obstruction due to BPH. The diode laser scenario is marked by a diversity of surgical techniques and wavelengths. We summarize the current published literature in respect of functional results and complications. More randomized controlled studies are needed to determine the position and the ideal technique of diode laser treatment for BPH.

Study and modeling of the transport mechanism in a semi insulating GaAs Schottky diode

NASA Astrophysics Data System (ADS)

Resfa, A.; Smahi, Bourzig Y.; Menezla, Brahimi. R.

2012-09-01

The current through a metal-semiconductor junction is mainly due to the majority carriers. Three distinctly different mechanisms exist in a Schottky diode: diffusion of carriers from the semiconductor into the metal, thermionic emission-diffusion (TED) of carriers across the Schottky barrier and quantum-mechanical tunneling through the barrier. The insulating layer converts the MS device in an MIS device and has a strong influence on its current-voltage (I-V) and the parameters of a Schottky barrier from 3.7 to 15 eV. There are several possible reasons for the error that causes a deviation of the ideal behavior of Schottky diodes with and without an interfacial insulator layer. These include the particular distribution of interface states, the series resistance, bias voltage and temperature. The GaAs and its large concentration values of trap centers will participate in an increase of the process of thermionic electrons and holes, which will in turn the IV characteristic of the diode, and an overflow maximum value [NT = 3 × 1020] is obtained. The I-V characteristics of Schottky diodes are in the hypothesis of a parabolic summit.

Influence of interface inhomogeneities in thin-film Schottky diodes

NASA Astrophysics Data System (ADS)

Wilson, Joshua; Zhang, Jiawei; Li, Yunpeng; Wang, Yiming; Xin, Qian; Song, Aimin

2017-11-01

The scalability of thin-film transistors has been well documented, but there have been very few investigations into the effects of device scalability in Schottky diodes. Indium-gallium-zinc-oxide (IGZO) Schottky diodes were fabricated with IGZO thicknesses of 50, 150, and 250 nm. Despite the same IGZO-Pt interface and Schottky barrier being formed in all devices, reducing the IGZO thickness caused a dramatic deterioration of the current-voltage characteristics, most notably increasing the reverse current by nearly five orders of magnitude. Furthermore, the forward characteristics display an increase in the ideality factor and a reduction in the barrier height. The origins of this phenomenon have been elucidated using device simulations. First, when the semiconductor layer is fully depleted, the electric field increases with the reducing thickness, leading to an increased diffusion current. However, the effects of diffusion only offer a small contribution to the huge variations in reverse current seen in the experiments. To fully explain this effect, the role of inhomogeneities in the Schottky barrier height has been considered. Contributions from lower barrier regions (LBRs) are found to dominate the reverse current. The conduction band minimum below these LBRs is strongly dependent upon thickness and bias, leading to reverse current variations as large as several orders of magnitude. Finally, it is demonstrated that the thickness dependence of the reverse current is exacerbated as the magnitude of the inhomogeneities is increased and alleviated in the limit where the LBRs are large enough not to be influenced by the adjacent higher barrier regions.

Composite CuFe1 - xSnxO2/p-type silicon photodiodes

NASA Astrophysics Data System (ADS)

Al-Sehemi, Abdullah G.; Mensah-Darkwa, K.; Al-Ghamdi, Ahmed A.; Soylu, M.; Gupta, R. K.; Yakuphanoglu, F.

2017-06-01

CuFe1 - xSnxO2 composite thin film/p-type silicon diodes were prepared on substrate by sol-gel method (x = 0.00, 0.01, 0.03, 0.05, 0.07). The structure of CuFe1 - xSnxO2 composite thin films was studied using XRD analysis and films exhibited amorphous behavior. The elemental compositions and surface morphology of the films were characterized using SEM and EDX. EDX results confirmed the presence of the compositional elements. The optical band gap of CuFe1 - xSnxO2 composite thin films was determined using the optic spectra. The optical band gaps of the CuFe1 - xSnxO2 composite thin films were calculated using optical data and were found to be 3.75, 3.78, 3.80, 3.85 and 3.83 eV for x = 0.00, 0.01, 0.03, 0.05 and 0.07, respectively. The photoresponse and electrical properties of the Al/CuFe1 - xSnxO2/p-Si/Al diode were studied. The barrier height and ideality factor were determined to be averagely 0.67 eV and 2.6, respectively. The electrical and photoresponse characteristics of the diodes have been investigated under dark and solar light illuminations, respectively. The interface states were used to explain the results obtained in present study. CuFe1 - xSnxO2 photodiodes exhibited a high photoresponsivity to be used in optoelectronic applications.

Characterization of the inhomogeneous barrier distribution in a Pt/(100)β-Ga2O3 Schottky diode via its temperature-dependent electrical properties

NASA Astrophysics Data System (ADS)

Jian, Guangzhong; He, Qiming; Mu, Wenxiang; Fu, Bo; Dong, Hang; Qin, Yuan; Zhang, Ying; Xue, Huiwen; Long, Shibing; Jia, Zhitai; Lv, Hangbing; Liu, Qi; Tao, Xutang; Liu, Ming

2018-01-01

β-Ga2O3 is an ultra-wide bandgap semiconductor with applications in power electronic devices. Revealing the transport characteristics of β-Ga2O3 devices at various temperatures is important for improving device performance and reliability. In this study, we fabricated a Pt/β-Ga2O3 Schottky barrier diode with good performance characteristics, such as a low ON-resistance, high forward current, and a large rectification ratio. Its temperature-dependent current-voltage and capacitance-voltage characteristics were measured at various temperatures. The characteristic diode parameters were derived using thermionic emission theory. The ideality factor n was found to decrease from 2.57 to 1.16 while the zero-bias barrier height Φb0 increased from 0.47 V to 1.00 V when the temperature was increased from 125 K to 350 K. This was explained by the Gaussian distribution of barrier height inhomogeneity. The mean barrier height Φ ¯ b0 = 1.27 V and zero-bias standard deviation σ0 = 0.13 V were obtained. A modified Richardson plot gave a Richardson constant A* of 36.02 A.cm-2.K-2, which is close to the theoretical value of 41.11 A.cm-2.K-2. The differences between the barrier heights determined using the capacitance-voltage and current-voltage curves were also in line with the Gaussian distribution of barrier height inhomogeneity.

Accurate expressions for solar cell fill factors including series and shunt resistances

NASA Astrophysics Data System (ADS)

Green, Martin A.

2016-02-01

Together with open-circuit voltage and short-circuit current, fill factor is a key solar cell parameter. In their classic paper on limiting efficiency, Shockley and Queisser first investigated this factor's analytical properties showing, for ideal cells, it could be expressed implicitly in terms of the maximum power point voltage. Subsequently, fill factors usually have been calculated iteratively from such implicit expressions or from analytical approximations. In the absence of detrimental series and shunt resistances, analytical fill factor expressions have recently been published in terms of the Lambert W function available in most mathematical computing software. Using a recently identified perturbative relationship, exact expressions in terms of this function are derived in technically interesting cases when both series and shunt resistances are present but have limited impact, allowing a better understanding of their effect individually and in combination. Approximate expressions for arbitrary shunt and series resistances are then deduced, which are significantly more accurate than any previously published. A method based on the insights developed is also reported for deducing one-diode fits to experimental data.

Electrical properties and interface state energy distributions of Cr/n-Si Schottky barrier diode

NASA Astrophysics Data System (ADS)

Karataş, Şükrü; Yildirim, Nezir; Türüt, Abdülmecit

2013-12-01

In this study, the electrical characteristics of the Cr/n-type Si (MS) Schottky barrier diode have been investigated by the current-voltage (I-V) and capacitance-voltage (C-V) measurements at 300 K temperature. Using the thermionic emission theory, the values of ideality factor and the barrier height have been obtained to be 1.22, 0.71 and 1.01, 0.83 eV, from the results of the I-V and C-V measurements, respectively. The barrier height (Φb) and the series resistance (RS) obtained from Norde’s function have been compared with those obtained from Cheung functions, and a good agreement between the results of both methods was seen. The interface state density (NSS) calculated without the RS is obtained to be increasing exponentially with bias from 2.40 × 1012 cm-2 eV-1 in (EC-0.623) eV to 1.94 × 1014 cm-2 eV-1 in (EC-0.495) eV, also, the NSS obtained taking into account the RS has increased exponentially with bias from 2.07 × 1012 cm-2 eV-1 to 1.47 × 1014 cm-2 eV-1 in the same interval.

Morphology, stoichiometry, and crystal structure control via post-annealing for Pt-ZnO nanograin Schottky barrier interfaces

NASA Astrophysics Data System (ADS)

Chan, Yuet Ching; Yu, Jerry; Ho, Derek

2018-06-01

Nanointerfaces have attracted intensive research effort for advanced electronics due to their unique and tunable semiconducting properties made possible by metal-contacted oxide structures at the nanoscale. Although much work has been on the adjustment of fabrication parameters to achieve high-quality interfaces, little work has experimentally obtained the various correlations between material parameters and Schottky barrier electronic properties to accurately probe the underlying phenomenon. In this work, we investigate the control of Pt-ZnO nanograin interfaces properties by thermal annealing. Specifically, we quantitatively analyze the correlation between material parameters (such as surface morphology, crystallographic structure, and stoichiometry) and Schottky diode parameters (Schottky barrier height, ideality factor, and contact resistance). Results revealed strong dependencies of Schottky barrier characteristics on oxygen vacancies, surface roughness, grain density, d-spacing, and crystallite size. I-V-T data shows that annealing at 600 °C produces a nanograin based interface with the most rectifying diode characteristics. These dependencies, which have not been previously reported holistically, highlight the close relationship between material properties and Schottky barrier characteristics, and are instrumental for the performance optimization of nanostructured metal-semiconductor interfaces in advanced electronic devices.

Extraction of depth-dependent perturbation factors for silicon diodes using a plastic scintillation detector.

PubMed

Lacroix, Frederic; Guillot, Mathieu; McEwen, Malcolm; Gingras, Luc; Beaulieu, Luc

2011-10-01

This work presents the experimental extraction of the perturbation factor in megavoltage electron beams for three models of silicon diodes (IBA Dosimetry, EFD and SFD, and the PTW 60012 unshielded) using a plastic scintillation detector (PSD). The authors used a single scanning PSD mounted on a high-precision scanning tank to measure depth-dose curves in 6-, 12-, and 18-MeV clinical electron beams. They also measured depth-dose curves using the IBA Dosimetry, EFD and SFD, and the PTW 60012 unshielded diodes. The authors used the depth-dose curves measured with the PSD as a perturbation-free reference to extract the perturbation factors of the diodes. The authors found that the perturbation factors for the diodes increased substantially with depth, especially for low-energy electron beams. The experimental results show the same trend as published Monte Carlo simulation results for the EFD diode; however, the perturbations measured experimentally were greater. They found that using an effective point of measurement (EPOM) placed slightly away from the source reduced the variation of perturbation factors with depth and that the optimal EPOM appears to be energy dependent. The manufacturer recommended EPOM appears to be incorrect at low electron energy (6 MeV). In addition, the perturbation factors for diodes may be greater than predicted by Monte Carlo simulations.

Limitations of silicon diodes for clinical electron dosimetry.

PubMed

Song, Haijun; Ahmad, Munir; Deng, Jun; Chen, Zhe; Yue, Ning J; Nath, Ravinder

2006-01-01

This work investigates the relevance of several factors affecting the response of silicon diode dosemeters in depth-dose scans of electron beams. These factors are electron energy, instantaneous dose rate, dose per pulse, photon/electron dose ratio and electron scattering angle (directional response). Data from the literature and our own experiments indicate that the impact of these factors may be up to +/-15%. Thus, the different factors would have to cancel out perfectly at all depths in order to produce true depth-dose curves. There are reports of good agreement between depth-doses measured with diodes and ionisation chambers. However, our measurements with a Scantronix electron field detector (EFD) diode and with a plane-parallel ionisation chamber show discrepancies both in the build-up and in the low-dose regions, with a ratio up to 1.4. Moreover, the absolute sensitivity of two diodes of the same EFD model was found to differ by a factor of 3, and this ratio was not constant but changed with depth between 5 and 15% in the low-dose regions of some clinical electron beams. Owing to these inhomogeneities among diodes even of the same model, corrections for each factor would have to be diode-specific and beam-specific. All these corrections would have to be determined using parallel plane chambers, as recommended by AAPM TG-25, which would be unrealistic in clinical practice. Our conclusion is that in general diodes are not reliable in the measurement of depth-dose curves of clinical electron beams.

Low-pressure CVD-grown β-Ga2O3 bevel-field-plated Schottky barrier diodes

NASA Astrophysics Data System (ADS)

Joishi, Chandan; Rafique, Subrina; Xia, Zhanbo; Han, Lu; Krishnamoorthy, Sriram; Zhang, Yuewei; Lodha, Saurabh; Zhao, Hongping; Rajan, Siddharth

2018-03-01

We report (010)-oriented β-Ga2O3 bevel-field-plated mesa Schottky barrier diodes grown by low-pressure chemical vapor deposition (LPCVD) using a solid Ga precursor and O2 and SiCl4 sources. Schottky diodes with good ideality and low reverse leakage were realized on the epitaxial material. Edge termination using beveled field plates yielded a breakdown voltage of -190 V, and maximum vertical electric fields of 4.2 MV/cm in the center and 5.9 MV/cm at the edge were estimated, with extrinsic R ON of 3.9 mΩ·cm2 and extracted intrinsic R ON of 0.023 mΩ·cm2. The reported results demonstrate the high quality of homoepitaxial LPCVD-grown β-Ga2O3 thin films for vertical power electronics applications, and show that this growth method is promising for future β-Ga2O3 technology.

Ideal solar cell equation in the presence of photon recycling

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lan, Dongchen, E-mail: d.lan@unsw.edu.au; Green, Martin A., E-mail: m.green@unsw.edu.au

Previous derivations of the ideal solar cell equation based on Shockley's p-n junction diode theory implicitly assume negligible effects of photon recycling. This paper derives the equation in the presence of photon recycling that modifies the values of dark saturation and light-generated currents, using an approach applicable to arbitrary three-dimensional geometries with arbitrary doping profile and variable band gap. The work also corrects an error in previous work and proves the validity of the reciprocity theorem for charge collection in such a more general case with the previously neglected junction depletion region included.

Carbon Nanotubes for Space Photovoltaic Applications

NASA Technical Reports Server (NTRS)

Efstathiadis, Harry; Haldar, Pradeep; Landi, Brian J.; Denno, Patrick L.; DiLeo, Roberta A.; VanDerveer, William; Raffaelle, Ryne P.

2007-01-01

Carbon nanotubes (CNTs) can be envisioned as an individual graphene sheet rolled into a seamless cylinder (single-walled, SWNT), or concentric sheets as in the case of a multi-walled carbon nanotube (MWNT) (1). The role-up vector will determine the hexagonal arrangement and "chirality" of the graphene sheet, which will establish the nanotube to be metallic or semiconducting. The optoelectronic properties will depend directly on this chiral angle and the diameter of the SWNT, with semiconductor types exhibiting a band gap energy (2). Characteristic of MWNTs are the concentric graphene layers spaced 0.34 nm apart, with diameters from 10-200 nm and lengths up to hundreds of microns (2). In the case of SWNTs, the diameters range from 0.4 - 2 nm and lengths have been reported up to 1.5 cm (3). SWNTs have the distinguishable property of "bundling" together due to van der Waal's attractions to form "ropes." A comparison of these different structural types is shown in Figure 1. The use of SWNTS in space photovoltaic (PV) applications is attractive for a variety of reasons. Carbon nanotubes as a class of materials exhibit unprecedented optical, electrical, mechanical properties, with the added benefit of being nanoscale in size which fosters ideal interaction in nanomaterial-based devices like polymeric solar cells. The optical bandgap of semiconducting SWNTs can be varied from approx. 0.4 - 1.5 eV, with this property being inversely proportional to the nanotube diameter. Recent work at GE Global Research has shown where a single nanotube device can behave as an "ideal" pn diode (5). The SWNT was bridged over a SiO2 channel between Mo contacts and exhibited an ideality factor of 1, based on a fit of the current-voltage data using the diode equation. The measured PV efficiency under a 0.8 eV monochromatic illumination showed a power conversion efficiency of 0.2 %. However, the projected efficiency of these junctions is estimated to be > 5 %, especially when one considers the enhanced absorption (from nanotubes whose bandgap is tailored to illumination) and electromagnetic coupling in a network of nanotubes.

Schottky x-ray detectors based on a bulk β-Ga2O3 substrate

NASA Astrophysics Data System (ADS)

Lu, Xing; Zhou, Leidang; Chen, Liang; Ouyang, Xiaoping; Liu, Bo; Xu, Jun; Tang, Huili

2018-03-01

β-Ga2O3 Schottky barrier diodes (SBDs) have been fabricated on a bulk (100) β-Ga2O3 substrate and tested as X-ray detectors in this study. The devices exhibited good rectification properties, such as a high rectification ratio and a close-to-unity ideality factor. A high photo-to-dark current ratio exceeding 800 was achieved for X-ray detection, which was mainly attributed to the low reverse leakage current in the β-Ga2O3 SBDs. Furthermore, transient response of the β-Ga2O3 X-ray detectors was investigated, and two different detection mechanisms, photovoltaic and photoconductive, were identified. The results imply the great potential of β-Ga2O3 based devices for X-ray detection.

Development and optimization of a diode laser for photodynamic therapy.

PubMed

Lim, Hyun Soo

2011-01-01

This study demonstrated the development of a laser system for cancer treatment with photodynamic therapy (PDT) based on a 635 nm laser diode. In order to optimize efficacy in PDT, the ideal laser system should deliver a homogeneous nondivergent light energy with a variable spot size and specific wavelength at a stable output power. We developed a digital laser beam controller using the constant current method to protect the laser diode resonator from the current spikes and other fluctuations, and electrical faults. To improve the PDT effects, the laser system should deliver stable laser energy in continuous wave (CW), burst mode and super burst mode, with variable irradiation times depending on the tumor type and condition. The experimental results showed the diode laser system described herein was eminently suitable for PDT. The laser beam was homogeneous without diverging and the output power increased stably and in a linear manner from 10 mW to 1500 mW according to the increasing input current. Variation between the set and delivered output was less than 7%. The diode laser system developed by the author for use in PDT was compact, user-friendly, and delivered a stable and easily adjustable output power at a specific wavelength and user-set emission modes.

Development and optimization of a diode laser for photodynamic therapy

PubMed Central

Lim, Hyun Soo

2011-01-01

Background and Aims: This study demonstrated the development of a laser system for cancer treatment with photodynamic therapy (PDT) based on a 635 nm laser diode. In order to optimize efficacy in PDT, the ideal laser system should deliver a homogeneous nondivergent light energy with a variable spot size and specific wavelength at a stable output power. Materials and Methods: We developed a digital laser beam controller using the constant current method to protect the laser diode resonator from the current spikes and other fluctuations, and electrical faults. To improve the PDT effects, the laser system should deliver stable laser energy in continuous wave (CW), burst mode and super burst mode, with variable irradiation times depending on the tumor type and condition. Results and Comments: The experimental results showed the diode laser system described herein was eminently suitable for PDT. The laser beam was homogeneous without diverging and the output power increased stably and in a linear manner from 10 mW to 1500 mW according to the increasing input current. Variation between the set and delivered output was less than 7%. Conclusions: The diode laser system developed by the author for use in PDT was compact, user-friendly, and delivered a stable and easily adjustable output power at a specific wavelength and user-set emission modes. PMID:24155529

A diode laser-based velocimeter providing point measurements in unseeded flows using modulated filtered Rayleigh scattering (MFRS)

NASA Astrophysics Data System (ADS)

Jagodzinski, Jeremy James

2007-12-01

The development to date of a diode-laser based velocimeter providing point-velocity-measurements in unseeded flows using molecular Rayleigh scattering is discussed. The velocimeter is based on modulated filtered Rayleigh scattering (MFRS), a novel variation of filtered Rayleigh scattering (FRS), utilizing modulated absorption spectroscopy techniques to detect a strong absorption of a relatively weak Rayleigh scattered signal. A rubidium (Rb) vapor filter is used to provide the relatively strong absorption; alkali metal vapors have a high optical depth at modest vapor pressures, and their narrow linewidth is ideally suited for high-resolution velocimetry. Semiconductor diode lasers are used to generate the relatively weak Rayleigh scattered signal; due to their compact, rugged construction diode lasers are ideally suited for the environmental extremes encountered in many experiments. The MFRS technique utilizes the frequency-tuning capability of diode lasers to implement a homodyne detection scheme using lock-in amplifiers. The optical frequency of the diode-based laser system used to interrogate the flow is rapidly modulated about a reference frequency in the D2-line of Rb. The frequency modulation is imposed on the Rayleigh scattered light that is collected from the probe volume in the flow under investigation. The collected frequency modulating Rayleigh scattered light is transmitted through a Rb vapor filter before being detected. The detected modulated absorption signal is fed to two lock-in amplifers synchronized with the modulation frequency of the source laser. High levels of background rejection are attained since the lock-ins are both frequency and phase selective. The two lock-in amplifiers extract different Fourier components of the detected modulated absorption signal, which are ratioed to provide an intensity normalized frequency dependent signal from a single detector. A Doppler frequency shift in the collected Rayleigh scattered light due to a change in the velocity of the flow under investigation results in a change in the detected modulated absorption signal. This change in the detected signal provides a quantifiable measure of the Doppler frequency shift, and hence the velocity in the probe volume, provided that the laser source exhibits acceptable levels of frequency stability (determined by the magnitude of the velocities being measured). An extended cavity diode laser (ECDL) in the Littrow configuration provides frequency tunable, relatively narrow-linewidth lasing for the MFRS velocimeter. Frequency stabilization of the ECDL is provided by a proportional-integral-differential (PID) controller based on an error signal in the reference arm of the experiment. The optical power of the Littrow laser source is amplified by an antireflection coated (AR coated) broad stripe diode laser. The single-mode, frequency-modulatable, frequency-stable O(50 mW) of optical power provided by this extended cavity diode laser master oscillator power amplifier (ECDL-MOPA) system provided sufficient scattering signal from a condensing jet of CO2 to implement the MFRS technique in the frequency-locked mode of operation.

Spectral characteristics of light sources for S-cone stimulation.

PubMed

Schlegelmilch, F; Nolte, R; Schellhorn, K; Husar, P; Henning, G; Tornow, R P

2002-11-01

Electrophysiological investigations of the short-wavelength sensitive pathway of the human eye require the use of a suitable light source as a S-cone stimulator. Different light sources with their spectral distribution properties were investigated and compared with the ideal S-cone stimulator. First, the theoretical background of the calculation of relative cone energy absorption from the spectral distribution function of the light source is summarized. From the results of the calculation, the photometric properties of the ideal S-cone stimulator will be derived. The calculation procedure was applied to virtual light sources (computer generated spectral distribution functions with different medium wavelengths and spectrum widths) and to real light sources (blue and green light emitting diodes, blue phosphor of CRT-monitor, multimedia projector, LCD monitor and notebook display). The calculated relative cone absorbencies are compared to the conditions of an ideal S-cone stimulator. Monochromatic light sources with wavelengths of less than 456 nm are close to the conditions of an ideal S-cone stimulator. Spectrum widths up to 21 nm do not affect the S-cone activation significantly (S-cone activation change < 0.2%). Blue light emitting diodes with peak wavelength at 448 nm and spectrum bandwidth of 25 nm are very useful for S-cone stimulation (S-cone activation approximately 95%). A suitable display for S-cone stimulation is the Trinitron computer monitor (S-cone activation approximately 87%). The multimedia projector has a S-cone activation up to 91%, but their spectral distribution properties depends on the selected intensity. LCD monitor and notebook displays have a lower S-cone activation (< or = 74%). Carefully selecting the blue light source for S-cone stimulation can reduce the unwanted L-and M-cone activation down to 4% for M-cones and 1.5% for L-cones.

SU-E-T-376: Evaluation of a New Stereotactic Diode for Small Field Dosimetry

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kralik, J; Kosterin, P; Mooij, R

2015-06-15

Purpose: To evaluate the performance of a new stereotactic diode for dosimetry of small photon fields. Methods: A new stereotactic diode, consisting of an unshielded p-type silicon chip, and with improved radiation hardness energy dependence was recently developed (IBA Dosimetry, Schwarzenbruch, Germany). The diode has an active volume of 0.6 mm dia. x 0.02 mm thick. Two new diodes were evaluated, one which was pre-irradiated to 100kGy with 10 MeV electrons and another which received no prior irradiation. Sensitivity, stability, reproducibility, and linearity as a function of dose were assessed. Beam profiles and small field output factors were measured onmore » a CyberKnife (CK) and compared with measurements using two commercially available diodes. Results: The new diodes exhibit linear behavior (within 0.6%) over a dose range 0.02 – 50 Gy; a commercially available device exhibits excursions of up to 4% over the same range. The sensitivity is 4.1 and 3.8 nC/Gy for the un-irradiated and pre-irradiated diodes, respectively. When irradiated with 150 Gy in dose increments of 5, 20 and 35 Gy, both new diodes provide a stable response within 0.5%. Output factors measured with the two new diodes are identical and compare favorably with other commercially available diodes and published data. Similarly, no differences in measured field size or penumbra were observed among the devices tested. Conclusion: The new diodes show excellent stability and sensitivity. The beam characterization in terms of output factors and beam profiles is consistent with that obtained with commercially available diodes.« less

Microcavity organic light-emitting diodes for strongly directed pure red, green, and blue emissions

NASA Astrophysics Data System (ADS)

Tokito, Shizuo; Tsutsui, Tetsuo; Taga, Yasunori

1999-09-01

In this article we demonstrate strongly directed pure red, green, and blue emissions in the organic light-emitting diodes (OLEDs) with a planar microcavity defined by a pair of dielectric mirror and a metal mirror. By careful control of the cavity mode and the position of the resonance wavelength, the strong directionality in the forward direction as well as the spectral narrowing and the intensity enhancement are realized in the microcavity OLEDs. The intensity enhancements at the resonance wavelength are 1.5-5 compared to the noncavity OLEDs, and the chromaticity coordinates of the emission colors are the ideal primary colors. The experimental results are compared to theoretically calculated ones.

Phase-front measurements of an injection-locked AlGaAs laser-diode array

NASA Technical Reports Server (NTRS)

Cornwell, Donald M., Jr.; Rall, Jonathan A. R.; Abshire, James B.

1989-01-01

The phase-front quality of the primary spatial lobe emitted from an injection-locked gain-guided AlGaAs laser-diode array is measured by using an equal-path, phase-shifting Mach-Zehnder interferometer. Root-mean-square phase errors of 0.037 + or - 0.003 wave are measured for the single spatial lobe, which contained 240-mW cw output power in a single longitudinal mode. This phase-front quality corresponds to a Strehl ratio of S = 0.947, which results in a 0.23-dB power loss from the single lobe's ideal diffraction-limited power. These values are comparable with those measured for single-stripe index-guided AlGaAs lasers.

Electrical characterization of the temperature dependence in CdTe/CdS heterojunctions deposited in-situ by pulsed laser deposition

NASA Astrophysics Data System (ADS)

Avila-Avendano, Jesus; Quevedo-Lopez, Manuel; Young, Chadwin

2018-02-01

The I-V and C-V characteristics of CdTe/CdS heterojunctions deposited in-situ by Pulsed Laser Deposition (PLD) were evaluated. In-situ deposition enables the study of the CdTe/CdS interface by avoiding potential impurities at the surface and interface as a consequence of exposure to air. The I-V and C-V characteristics of the resulting junctions were obtained at different temperatures, ranging from room temperature to 150 °C, where the saturation current (from 10-8 to 10-4 A/cm2), ideality factor (between 1 and 2), series resistance (from 102 to 105 Ω), built-in potential (0.66-0.7 V), rectification factor (˜106), and carrier concentration (˜1016 cm-3) were obtained. The current-voltage temperature dependence study indicates that thermionic emission is the main transport mechanism at the CdTe/CdS interface. This study also demonstrated that the built-in potential (Vbi) calculated using a thermionic emission model is more accurate than that calculated using C-V extrapolation since C-V plots showed a Vbi shift as a function of frequency. Although CdTe/CdS is widely used for photovoltaic applications, the parameters evaluated in this work indicate that CdTe/CdS heterojunctions could be used as rectifying diodes and junction field effect transistors (JFETs). JFETs require a low PN diode saturation current, as demonstrated for the CdTe/CdS junction studied here.

Monte Carlo-based diode design for correction-less small field dosimetry.

PubMed

Charles, P H; Crowe, S B; Kairn, T; Knight, R T; Hill, B; Kenny, J; Langton, C M; Trapp, J V

2013-07-07

Due to their small collecting volume, diodes are commonly used in small field dosimetry. However, the relative sensitivity of a diode increases with decreasing small field size. Conversely, small air gaps have been shown to cause a significant decrease in the sensitivity of a detector as the field size is decreased. Therefore, this study uses Monte Carlo simulations to look at introducing air upstream to diodes such that they measure with a constant sensitivity across all field sizes in small field dosimetry. Varying thicknesses of air were introduced onto the upstream end of two commercial diodes (PTW 60016 photon diode and PTW 60017 electron diode), as well as a theoretical unenclosed silicon chip using field sizes as small as 5 mm × 5 mm. The metric D(w,Q)/D(Det,Q) used in this study represents the ratio of the dose to a point of water to the dose to the diode active volume, for a particular field size and location. The optimal thickness of air required to provide a constant sensitivity across all small field sizes was found by plotting D(w,Q)/D(Det,Q) as a function of introduced air gap size for various field sizes, and finding the intersection point of these plots. That is, the point at which D(w,Q)/D(Det,Q) was constant for all field sizes was found. The optimal thickness of air was calculated to be 3.3, 1.15 and 0.10 mm for the photon diode, electron diode and unenclosed silicon chip, respectively. The variation in these results was due to the different design of each detector. When calculated with the new diode design incorporating the upstream air gap, k(f(clin),f(msr))(Q(clin),Q(msr)) was equal to unity to within statistical uncertainty (0.5%) for all three diodes. Cross-axis profile measurements were also improved with the new detector design. The upstream air gap could be implanted on the commercial diodes via a cap consisting of the air cavity surrounded by water equivalent material. The results for the unclosed silicon chip show that an ideal small field dosimetry diode could be created by using a silicon chip with a small amount of air above it.

Monte Carlo study of si diode response in electron beams.

PubMed

Wang, Lilie L W; Rogers, David W O

2007-05-01

Silicon semiconductor diodes measure almost the same depth-dose distributions in both photon and electron beams as those measured by ion chambers. A recent study in ion chamber dosimetry has suggested that the wall correction factor for a parallel-plate ion chamber in electron beams changes with depth by as much as 6%. To investigate diode detector response with respect to depth, a silicon diode model is constructed and the water/silicon dose ratio at various depths in electron beams is calculated using EGSnrc. The results indicate that, for this particular diode model, the diode response per unit water dose (or water/diode dose ratio) in both 6 and 18 MeV electron beams is flat within 2% versus depth, from near the phantom surface to the depth of R50 (with calculation uncertainty <0.3%). This suggests that there must be some other correction factors for ion chambers that counter-balance the large wall correction factor at depth in electron beams. In addition, the beam quality and field-size dependence of the diode model are also calculated. The results show that the water/diode dose ratio remains constant within 2% over the electron energy range from 6 to 18 MeV. The water/diode dose ratio does not depend on field size as long as the incident electron beam is broad and the electron energy is high. However, for a very small beam size (1 X 1 cm(2)) and low electron energy (6 MeV), the water/diode dose ratio may decrease by more than 2% compared to that of a broad beam.

Effects of fluorine incorporation into β-Ga2O3

NASA Astrophysics Data System (ADS)

Yang, Jiangcheng; Fares, Chaker; Ren, F.; Sharma, Ribhu; Patrick, Erin; Law, Mark E.; Pearton, S. J.; Kuramata, Akito

2018-04-01

β-Ga2O3 rectifiers fabricated on lightly doped epitaxial layers on bulk substrates were exposed to CF4 plasmas. This produced a significant decrease in Schottky barrier height relative to unexposed control diodes (0.68 eV compared to 1.22 eV) and degradation in ideality factor (2.95 versus 1.01 for the control diodes). High levels of F (>1022 cm-3) were detected in the near-surface region by Secondary Ion Mass Spectrometry. The diffusion of fluorine into the Ga2O3 was thermally activated with an activation energy of 1.24 eV. Subsequent annealing in the range 350-400 °C brought recovery of the diode characteristics and an increase in barrier height to a value larger than in the unexposed control diodes (1.36 eV). Approximately 70% of the initial F was removed from the Ga2O3 by 400 °C, with the surface outgas rate also being thermally activated with an activation energy of 1.23 eV. Very good fits to the experimental data were obtained by integrating physics of the outdiffusion mechanisms into the Florida Object Oriented Process Simulator code and assuming that the outgas rate from the surface was mediated through fluorine molecule formation. The fluorine molecule forward reaction rate had an activation energy of 1.24 eV, while the reversal rate of this reaction had an activation energy of 0.34 eV. The net carrier density in the drift region of the rectifiers decreased after CF4 exposure and annealing at 400 °C. The data are consistent with a model in which near-surface plasma-induced damage creates degraded Schottky barrier characteristics, but as the samples are annealed, this damage is removed, leaving the compensation effect of Si donors by F- ions. The barrier lowering and then enhancement are due to the interplay between surface defects and the chemical effects of the fluorine.

The impact of water vapor diodes on soil water redistribution

NASA Astrophysics Data System (ADS)

Wang, Zhuangji; Ankeny, Mark; Horton, Robert

2017-09-01

Diurnal soil temperature fluctuations are the prime cause for subsurface water vapor fluxes. In arid and semi-arid areas, water vapor flux is the dominant means of soil water redistribution. The directions of water vapor flux shift from upward to downward diurnally following the variations of the soil thermal gradient. A water vapor diode (WVD), acting as a check valve, allows water vapor flux in one direction but heat flux in both directions. By installing a subsurface WVD, it is possible to impose direction-controlled vapor fluxes, and WVDs can be used to accumulate or remove water in particular soil layers. The egg carton shape, with pores situated at selected peaks and valleys, is a possible design for WVDs. In this study, we provide the concept and the properties of the ideal WVDs, and we discuss four WVD configurations to control soil water redistribution. Numerical simulation is used to evaluate the impacts of the ideal WVDs. The results indicate that WVDs can increase local water contents by at least 0.1 m3m-3 in a silt loam. For a fixed initial water and thermal condition, the effect of WVDs is related to the deployment depth and distance between two consecutive WVDs. WVDs can be used to manipulate soil water redistribution and accumulate water at specific depths to support plant growth. The numerical simulation results indicate the potential effectiveness of the ideal WVDs, and field tests should be performed to determine their function under specific soil conditions.

Organic semiconductor photodiode based on indigo carmine/n-Si for optoelectronic applications

NASA Astrophysics Data System (ADS)

Ganesh, V.; Manthrammel, M. Aslam; Shkir, Mohd.; Yahia, I. S.; Zahran, H. Y.; Yakuphanoglu, F.; AlFaify, S.

2018-06-01

The fabrication of indigo carmine/n-Si photodiode has been done, and a robust dark and photocurrent-voltage ( I- V), capacitance vs. voltage ( C-V) and conductance vs. voltage ( G-V) studies were done over a wide range of applied voltage and frequencies. The surface morphology was assessed by atomic force microscope (AFM), and the grain size was measured to be about 66 nm. The reverse current increased with both increasing illumination intensity and bias potential, whereas the forward current increased exponentially with bias potential. The responsivity value was also calculated. Barrier height and ideality factor of diode were estimated through a log (I) vs log (V) plot, and obtained to be 0.843 and 4.75 eV, respectively. The Vbi values are found between 0.95 and 1.2V for frequencies ranging between 100 kHz and 1 MHz. The value of R s is found to be lower at higher frequencies which may be due to a certain distribution of localized interface states. A strong frequency and voltage dependency were observed for interface states density N ss in the present indigo carmine/n-Si photodiode, and this explained the observed capacitance and resistance variation with frequency. These results suggest that the fabricated diode has the potential to be applied in optoelectronic devices.

Schottky barrier height of Ni to β-(AlxGa1-x)2O3 with different compositions grown by plasma-assisted molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Ahmadi, Elaheh; Oshima, Yuichi; Wu, Feng; Speck, James S.

2017-03-01

Coherent β-(AlxGa1-x)2O3 films (x = 0, 0.038, 0.084, 0.164) were grown successfully on a Sn-doped β-Ga2O3 (010) substrate using plasma-assisted molecular beam epitaxy. Atom probe tomography, transmission electron microscopy, and high resolution x-ray diffraction were used to verify the alloy composition and high quality of the films. Schottky diodes were then fabricated using Ni as the Schottky metal. Capacitance-voltage measurements revealed a very low (<7 × 1015 cm-3) free charge density in the nominally undoped films. The barrier height and ideality factor were estimated by current-voltage (I-V) measurements performed at temperatures varying from 300 K to 500 K on the Schottky diodes. These measurements revealed that the apparent Schottky barrier height could have similar values for different compositions of β-(AlxGa1-x)2O3. We believe this is attributed to the lateral fluctuation in the alloy’s composition. This results in a lateral variation in the barrier height. Therefore, the average Schottky barrier height extracted from I-V measurements could be similar for β-(AlxGa1-x)2O3 films with different compositions.

UV/ozone assisted local graphene (p)/ZnO(n) heterojunctions as a nanodiode rectifier

NASA Astrophysics Data System (ADS)

Sahatiya, Parikshit; Badhulika, Sushmee

2016-07-01

Here we report the fabrication of a novel graphene/ZnO nanodiode by UV/ozone assisted oxidation of graphene and demonstrate its application as a half-wave rectifier to generate DC voltage. The method involves the use of electrospinning for one-step in situ synthesis and alignment of single Gr/ZnO nanocomposite across metal electrodes. On subsequent UV illumination, graphene oxidizes, which induces p type doping and ZnO being an n type semiconductor, thus resulting in the formation of a nanodiode. The as-fabricated device shows strong non-linear current-voltage characteristic similar to that of conventional semiconductor p-n junction diodes. Excellent rectifying behavior with a rectification ratio of ~103 was observed and the nanodiodes were found to exhibit long-term repeatability in their performance. Ideality factor and barrier height, as calculated by the thermionic emission model, were found to be 1.6 and 0.504 eV respectively. Due to the fact that diodes are the basic building blocks in the electronics and semiconductor industry, the successful fabrication of these nanodiodes based on UV assisted p type doping of graphene indicates that this approach can be used for developing highly scalable and efficient components for nanoelectronics, such as rectifiers and logic gates that find applications in numerous fields.

Van der Waals MoS2/VO2 heterostructure junction with tunable rectifier behavior and efficient photoresponse.

PubMed

Oliva, Nicoló; Casu, Emanuele Andrea; Yan, Chen; Krammer, Anna; Rosca, Teodor; Magrez, Arnaud; Stolichnov, Igor; Schueler, Andreas; Martin, Olivier J F; Ionescu, Adrian Mihai

2017-10-27

Junctions between n-type semiconductors of different electron affinity show rectification if the junction is abrupt enough. With the advent of 2D materials, we are able to realize thin van der Waals (vdW) heterostructures based on a large diversity of materials. In parallel, strongly correlated functional oxides have emerged, having the ability to show reversible insulator-to-metal (IMT) phase transition by collapsing their electronic bandgap under a certain external stimulus. Here, we report for the first time the electronic and optoelectronic characterization of ultra-thin n-n heterojunctions fabricated using deterministic assembly of multilayer molybdenum disulphide (MoS 2 ) on a phase transition material, vanadium dioxide (VO 2 ). The vdW MoS 2 /VO 2 heterojunction combines the excellent blocking capability of an n-n junction with a high conductivity in on-state, and it can be turned into a Schottky rectifier at high applied voltage or at temperatures higher than 68 °C, exploiting the metal state of VO 2 . We report tunable diode-like current rectification with a good diode ideality factor of 1.75 and excellent conductance swing of 120 mV/dec. Finally, we demonstrate unique tunable photosensitivity and excellent junction photoresponse in the 500/650 nm wavelength range.

Observation of reflected waves on the SABRE positive polarity inductive adder MITL

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cuneo, M.E.; Poukey, J.W.; Mendel, C.W.

We are studying the coupling of extraction applied-B ion diodes to Magnetically Insulated Transmission Line (MITLs) on the SABRE (Sandia Accelerator and Beam Research Experiment, 6 MV, 300 kA) positive polarity inductive voltage adder. Our goal is to determine conditions under which efficient coupling occurs. The best total power efficiency for an ideal ion diode load (i.e., without parasitic losses) is obtained by maximizing the product of cathode current and gap voltage. MITLs require that the load impedance be undermatched to the self-limited line operating impedance for efficient transfer of power to ion diodes, independent of transit time isolation, andmore » even in the case of multiple cathode system with significant vacuum electron flow. We observe that this undermatched condition results in a reflected wave which decreases the line voltage and gap electron sheath current, and increases the anode and cathode current in a time-dependent way. The MITL diode coupling is determined by the flow impedance at the adder exit. We also show that the flow impedance increases along the extension MITL on SABRE. Experimental measurements of current and peak voltage are compared to analytical models and TWOQUICK 2.5-D PIC code simulations.« less

High performance incandescent lighting using a selective emitter and nanophotonic filters

NASA Astrophysics Data System (ADS)

Leroy, Arny; Bhatia, Bikram; Wilke, Kyle; Ilic, Ognjen; Soljačić, Marin; Wang, Evelyn N.

2017-09-01

Previous approaches for improving the efficiency of incandescent light bulbs (ILBs) have relied on tailoring the emitted spectrum using cold-side interference filters that reflect the infrared energy back to the emitter while transmitting the visible light. While this approach has, in theory, potential to surpass light-emitting diodes (LEDs) in terms of luminous efficiency while conserving the excellent color rendering index (CRI) inherent to ILBs, challenges such as low view factor between the emitter and filter, high emitter (>2800 K) and filter temperatures and emitter evaporation have significantly limited the maximum efficiency. In this work, we first analyze the effect of non-idealities in the cold-side filter, the emitter and the view factor on the luminous efficiency. Second, we theoretically and experimentally demonstrate that the loss in efficiency associated with low view factors can be minimized by using a selective emitter (e.g., high emissivity in the visible and low emissivity in the infrared) with a filter. Finally, we discuss the challenges in achieving a high performance and long-lasting incandescent light source including the emitter and filter thermal stability as well as emitter evaporation.

Harmonic balance optimization of terahertz Schottky diode multipliers using an advanced device model

NASA Technical Reports Server (NTRS)

Schlecht, E. T.; Chattopadhyay, G.; Maestrini, A.; Pukala, D.; Gill, J.; Mehdi, I.

2002-01-01

Substantial proress has been made recently in the advancement of solid state terahertz sources using chains of Schottky diode frequency multipliers. We have developed a harmonic balance simulator and corresponding diode model that incorporates many other factors participating in the diode behavior.

Planar doped barrier subharmonic mixers

NASA Technical Reports Server (NTRS)

Lee, T. H.; East, J. R.; Haddad, G. I.

1992-01-01

The Planar Doped Barrier (PDB) diode is a device consisting of a p(+) doping spike between two intrinsic layers and n(+) ohmic contacts. This device has the advantages of controllable barrier height, diode capacitance and forward to reverse current ratio. A symmetrically designed PDB has an anti-symmetric current vs. voltage characteristic and is ideal for use as millimeter wave subharmonic mixers. We have fabricated such devices with barrier heights of 0.3, 0.5 and 0.7 volts from GaAs and InGaAs using a multijunction honeycomb structure with junction diameters between one and ten microns. Initial RF measurements are encouraging. The 0.7 volt barrier height 4 micron GaAs devices were tested as subharmonic mixers at 202 GHz with an IF frequency of 1 GHz and had 18 dB of conversion loss. The estimated mismatch loss was 7 dB and was due to higher diode capacitance. The LO frequency was 100.5 GHz and the pump power was 8 mW.

A linear diode array (JFD-5) for match line in vivo dosimetry in photon and electron beams; evaluation for a chest wall irradiation technique.

PubMed

Essers, M; van Battum, L; Heijmen, B J

2001-11-01

In vivo dosimetry using thermoluminiscence detectors (TLD) is routinely performed in our institution to determine dose inhomogeneities in the match line region during chest wall irradiation. However, TLDs have some drawbacks: online in vivo dosimetry cannot be performed; generally, doses delivered by the contributing fields are not measured separately; measurement analysis is time consuming. To overcome these problems, the Joined Field Detector (JFD-5), a detector for match line in vivo dosimetry based on diodes, has been developed. This detector and its characteristics are presented. The JFD-5 is a linear array of 5 p-type diodes. The middle three diodes, used to measure the dose in the match line region, are positioned at 5-mm intervals. The outer two diodes, positioned at 3-cm distance from the central diode, are used to measure the dose in the two contributing fields. For three JFD-5 detectors, calibration factors for different energies, and sensitivity correction factors for non-standard field sizes, patient skin temperature, and oblique incidence have been determined. The accuracy of penumbra and match line dose measurements has been determined in phantom studies and in vivo. Calibration factors differ significantly between diodes and between photon and electron beams. However, conversion factors between energies can be applied. The correction factor for temperature is 0.35%/ degrees C, and for oblique incidence 2% at maximum. The penumbra measured with the JFD-5 agrees well with film and linear diode array measurements. JFD-5 in vivo match line dosimetry reproducibility was 2.0% (1 SD) while the agreement with TLD was 0.999+/-0.023 (1 SD). The JFD-5 can be used for accurate, reproducible, and fast on-line match line in vivo dosimetry.

Correction of measured Gamma-Knife output factors for angular dependence of diode detectors and PinPoint ionization chamber.

PubMed

Hršak, Hrvoje; Majer, Marija; Grego, Timor; Bibić, Juraj; Heinrich, Zdravko

2014-12-01

Dosimetry for Gamma-Knife requires detectors with high spatial resolution and minimal angular dependence of response. Angular dependence and end effect time for p-type silicon detectors (PTW Diode P and Diode E) and PTW PinPoint ionization chamber were measured with Gamma-Knife beams. Weighted angular dependence correction factors were calculated for each detector. The Gamma-Knife output factors were corrected for angular dependence and end effect time. For Gamma-Knife beams angle range of 84°-54°. Diode P shows considerable angular dependence of 9% and 8% for the 18 mm and 14, 8, 4 mm collimator, respectively. For Diode E this dependence is about 4% for all collimators. PinPoint ionization chamber shows angular dependence of less than 3% for 18, 14 and 8 mm helmet and 10% for 4 mm collimator due to volumetric averaging effect in a small photon beam. Corrected output factors for 14 mm helmet are in very good agreement (within ±0.3%) with published data and values recommended by vendor (Elekta AB, Stockholm, Sweden). For the 8 mm collimator diodes are still in good agreement with recommended values (within ±0.6%), while PinPoint gives 3% less value. For the 4 mm helmet Diodes P and E show over-response of 2.8% and 1.8%, respectively. For PinPoint chamber output factor of 4 mm collimator is 25% lower than Elekta value which is generally not consequence of angular dependence, but of volumetric averaging effect and lack of lateral electronic equilibrium. Diodes P and E represent good choice for Gamma-Knife dosimetry. Copyright © 2014 Associazione Italiana di Fisica Medica. Published by Elsevier Ltd. All rights reserved.

Electrical Characterization of Graphite/InP Schottky Diodes by I-V-T and C-V Methods

NASA Astrophysics Data System (ADS)

Tiagulskyi, Stanislav; Yatskiv, Roman; Grym, Jan

2018-02-01

A rectifying junction was prepared by casting a drop of colloidal graphite on the surface of an InP substrate. The electrophysical properties of graphite/InP junctions were investigated in a wide temperature range. Temperature-dependent I-V characteristics of the graphite/InP junctions are explained by the thermionic emission mechanism. The Schottky barrier height (SBH) and the ideality factor were found to be 0.9 eV and 1.47, respectively. The large value of the SBH and its weak temperature dependence are explained by lateral homogeneity of the junction, which is related to the structure of the graphite layer. The moderate disagreement between the current-voltage and capacitance-voltage measurements is attributed to the formation of interfacial native oxide film on the InP surface.

Effects of light quality on the accumulation of phytochemicals in vegetables produced in controlled environments: a review.

PubMed

Bian, Zhong Hua; Yang, Qi Chang; Liu, Wen Ke

2015-03-30

Phytochemicals in vegetables are important for human health, and their biosynthesis, metabolism and accumulation are affected by environmental factors. Light condition (light quality, light intensity and photoperiod) is one of the most important environmental variables in regulating vegetable growth, development and phytochemical accumulation, particularly for vegetables produced in controlled environments. With the development of light-emitting diode (LED) technology, the regulation of light environments has become increasingly feasible for the provision of ideal light quality, intensity and photoperiod for protected facilities. In this review, the effects of light quality regulation on phytochemical accumulation in vegetables produced in controlled environments are identified, highlighting the research progress and advantages of LED technology as a light environment regulation tool for modifying phytochemical accumulation in vegetables. © 2014 Society of Chemical Industry.

Design, fabrication and characterization of an a-Si:H-based UV detector for sunburn applications

NASA Astrophysics Data System (ADS)

Bayat, Khadijeh; Vygranenko, Yuriy; Sazonov, Andrei; Farrokh-Baroughi, Mahdi

2006-12-01

A thin-film a-Si:H pin detector was developed for selective detection of UVA (320-400 nm) radiation. In order for the fabrication technology to be transferable onto flexible substrates, all of the processing steps were conducted at temperatures less than 125 °C. The measured saturation current as low as 2 pA cm-2 and the ideality factor of 1.47 show that the pin diodes have a good quality i-layer as well as p-i and n-i interfaces. The film thicknesses were optimized to suppress the detector sensitivity in the visible spectral range, and the peak of spectral response was observed at 410 nm. The selectivity estimated from the ratio of the photocurrent generated by UVA absorption to the total photocurrent is 21%.

Single-photon emitting diode in silicon carbide.

PubMed

Lohrmann, A; Iwamoto, N; Bodrog, Z; Castelletto, S; Ohshima, T; Karle, T J; Gali, A; Prawer, S; McCallum, J C; Johnson, B C

2015-07-23

Electrically driven single-photon emitting devices have immediate applications in quantum cryptography, quantum computation and single-photon metrology. Mature device fabrication protocols and the recent observations of single defect systems with quantum functionalities make silicon carbide an ideal material to build such devices. Here, we demonstrate the fabrication of bright single-photon emitting diodes. The electrically driven emitters display fully polarized output, superior photon statistics (with a count rate of >300 kHz) and stability in both continuous and pulsed modes, all at room temperature. The atomic origin of the single-photon source is proposed. These results provide a foundation for the large scale integration of single-photon sources into a broad range of applications, such as quantum cryptography or linear optics quantum computing.

Chronic Inflammatory Gingival Overgrowths: Laser Gingivectomy & Gingivoplasty

PubMed Central

Shankar, B Shiva; T, Ramadevi; S, Neetha M; Reddy, P Sunil Kumar; Saritha, G; Reddy, J Muralinath

2013-01-01

It is quite common to note chronic inflammatory Gingival overgrowths during and/or post orthodontic treatment. Sometimes the overgrowths may even potentially complicate and/or interrupt orthodontic treatment. With the introduction of soft tissue lasers these problems can now be addressed more easily. Amongst many LASERS now available in Dentistry DIODE LASERS seem to be most ideal for orthodontic soft tissue applications. As newer treatments herald into minimally invasive techniques, DIODE LASERS are becoming more promising both in patient satisfaction and dentist satisfaction. How to cite this article: Shankar BS, Ramadevi T, Neetha M S, Reddy P S K, Saritha G, Reddy J M. Chronic Inflammatory Gingival Overgrowths: Laser Gingivectomy & Gingivoplasty. J Int Oral Health 2013; 5(1):83-87. PMID:24155582

Simulative research on the anode plasma dynamics in the high-power electron beam diode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cai, Dan; Liu, Lie; Ju, Jin-Chuan

2015-07-15

Anode plasma generated by electron beams could limit the electrical pulse-length, modify the impedance and stability of diode, and affect the generator to diode power coupling. In this paper, a particle-in-cell code is used to study the dynamics of anode plasma in the high-power electron beam diode. The effect of gas type, dynamic characteristic of ions on the diode operation with bipolar flow model are presented. With anode plasma appearing, the amplitude of diode current is increased due to charge neutralizations of electron flow. The lever of neutralization can be expressed using saturation factor. At same pressure of the anodemore » gas layer, the saturation factor of CO{sub 2} is bigger than the H{sub 2}O vapor, namely, the generation rate of C{sup +} ions is larger than the H{sup +} ions at the same pressure. The transition time of ions in the anode-cathode gap could be used to estimate the time of diode current maximum.« less

Properties of homoepitaxial 4H-SiC and characteristics of Ti/4H-SiC Schottky barrier diodes

NASA Astrophysics Data System (ADS)

Chen, G.; Li, Z. Y.; Bai, S.; Han, P.

2008-02-01

This paper describes the properties of the homoepitaxial 4H-SiC layer, the fabrication and electrical parameters of Ti/4H-SiC Schottky barrier diode (SBD). The 4H-SiC epitaxial layers, grown on the commercially available 8°off-oriented Si-face(0001) single-crystal 4H-SiC wafers, have been performed at 1550~1600°C by using the step controlled epitaxy with low pressure chemical vapor deposition. X-ray diffraction measurement result indicates the single crystal nature of the epilayer, and Raman spectrum shows the typical 4H-SiC feature peaks. When the off-oriented angle of substrate is 8°, the epitaxial growth perfectly replicates the substrate's polytype. High quality 4H-SiC epilayer has been generated on the 4H-SiC substrate. Ti/4H-SiC SBDs with blocking voltage 1kV have been made on an undoped epilayer with 12um in thick and 3×10 15cm -3 in carrier density. The ideality factor n=1.16 and the effective barrier height φ e=0.9V of the Ti/4H-SiC SBDs are measured with method of forward density-voltage (J-V). The diode rectification ratio of forward to reverse (defined at +/-1V) is over 10 7 at room temperature. By using B + implantation, an amorphous layer as the edge termination is formed. The SBDs have on-state current density of 200A/cm2 at a forward voltage drop of about 2V. The specific on-resistance for the rectifier is found to be as 6.6mΩ•cm2.

Extension of the ADC Charge-Collection Model to Include Multiple Junctions

NASA Technical Reports Server (NTRS)

Edmonds, Larry D.

2011-01-01

The ADC model is a charge-collection model derived for simple p-n junction silicon diodes having a single reverse-biased p-n junction at one end and an ideal substrate contact at the other end. The present paper extends the model to include multiple junctions, and the goal is to estimate how collected charge is shared by the different junctions.

Topological Insulator Bi2Se3/Si-Nanowire-Based p-n Junction Diode for High-Performance Near-Infrared Photodetector.

PubMed

Das, Biswajit; Das, Nirmalya S; Sarkar, Samrat; Chatterjee, Biplab K; Chattopadhyay, Kalyan K

2017-07-12

Chemically derived topological insulator Bi 2 Se 3 nanoflake/Si nanowire (SiNWs) heterojunctions were fabricated employing all eco-friendly cost-effective chemical route for the first time. X-ray diffraction studies confirmed proper phase formation of Bi 2 Se 3 nanoflakes. The morphological features of the individual components and time-evolved hybrid structures were studied using field emission scanning electron microscope. High resolution transmission electron microscopic studies were performed to investigate the actual nature of junction whereas elemental distributions at junction, along with overall stoichiometry of the samples were analyzed using energy dispersive X-ray studies. Temperature dependent current-voltage characteristics and variation of barrier height and ideality factor was studied between 50 and 300 K. An increase in barrier height and decrease in the ideality factor were observed with increasing temperature for the sample. The rectification ratio (I + /I - ) for SiNWs substrate over pristine Si substrate under dark and near-infrared (NIR) irradiation of 890 nm was found to be 3.63 and 10.44, respectively. Furthermore, opto-electrical characterizations were performed for different light power intensities and highest photo responsivity and detectivity were determined to be 934.1 A/W and 2.30 × 10 13 Jones, respectively. Those values are appreciably higher than previous reports for topological insulator based devices. Thus, this work establishes a hybrid system based on topological insulator Bi 2 Se 3 nanoflake and Si nanowire as the newest efficient candidate for advanced optoelectronic materials.

Systematic error of diode thermometer.

PubMed

Iskrenovic, Predrag S

2009-08-01

Semiconductor diodes are often used for measuring temperatures. The forward voltage across a diode decreases, approximately linearly, with the increase in temperature. The applied method is mainly the simplest one. A constant direct current flows through the diode, and voltage is measured at diode terminals. The direct current that flows through the diode, putting it into operating mode, heats up the diode. The increase in temperature of the diode-sensor, i.e., the systematic error due to self-heating, depends on the intensity of current predominantly and also on other factors. The results of systematic error measurements due to heating up by the forward-bias current have been presented in this paper. The measurements were made at several diodes over a wide range of bias current intensity.

Functionalized Graphitic Carbon Nitride for Metal-free, Flexible and Rewritable Nonvolatile Memory Device via Direct Laser-Writing

NASA Astrophysics Data System (ADS)

Zhao, Fei; Cheng, Huhu; Hu, Yue; Song, Long; Zhang, Zhipan; Jiang, Lan; Qu, Liangti

2014-07-01

Graphitic carbon nitride nanosheet (g-C3N4-NS) has layered structure similar with graphene nanosheet and presents unusual physicochemical properties due to the s-triazine fragments. But their electronic and electrochemical applications are limited by the relatively poor conductivity. The current work provides the first example that atomically thick g-C3N4-NSs are the ideal candidate as the active insulator layer with tunable conductivity for achieving the high performance memory devices with electrical bistability. Unlike in conventional memory diodes, the g-C3N4-NSs based devices combined with graphene layer electrodes are flexible, metal-free and low cost. The functionalized g-C3N4-NSs exhibit desirable dispersibility and dielectricity which support the all-solution fabrication and high performance of the memory diodes. Moreover, the flexible memory diodes are conveniently fabricated through the fast laser writing process on graphene oxide/g-C3N4-NSs/graphene oxide thin film. The obtained devices not only have the nonvolatile electrical bistability with great retention and endurance, but also show the rewritable memory effect with a reliable ON/OFF ratio of up to 105, which is the highest among all the metal-free flexible memory diodes reported so far, and even higher than those of metal-containing devices.

Characterisation of flash X-ray source generated by Kali-1000 Pulse Power System

NASA Astrophysics Data System (ADS)

Satyanarayana, N.; Durga Prasada Rao, A.; Mittal, K. C.

2016-02-01

The electron beam-driven Rod Pinch Diode (RPD) is presently fielded on KALI-1000 Pulse Power System at Bhabha Atomic Research Centre, Visakhapatnam and is a leading candidate for future flash X-ray radiographic sources. The diode is capable of producing less than 2-mm radiation spot sizes and greater than 350 milli rads of dose measured at 1 m from the X-ray source. KALI-1000 Pulse Power Source is capable of delivering up to 600 kV using a Tesla Transformer with Demineralized Insulated Transmission Line (DITL), the diode typically operates between 250-330 kV . Since the radiation dose has a power-law dependence on diode voltage, this limits the dose production on KALI-1000 system. Radiation dose with angular variation is measured using thermoluminescent detectors (TLD's) and the X-ray spot size is measured using pin hole arrangement with image plate (IP) to obtain the time-integrated source profile as well as a time-resolved spot diagnostic. An X-ray pinhole camera was used to pick out where the energetic e-beam connects to the anode. Ideally the diode should function such that the radiation is emitted from the tip. The camera was mounted perpendicular to the machine's axis to view the radiation from the tip. Comparison of the spot sizes of the X-ray sources obtained by the pin hole and rolled edge arrangements was carried and results obtained by both the techniques are with in ± 10% of the average values.

Study and modeling of the transport mechanism in a Schottky diode on the basis of a GaAs semiinsulator

NASA Astrophysics Data System (ADS)

Resfa, A.; Smahi, Bourzig Y.; Menezla, Brahimi R.

2011-12-01

The current through a metal—semiconductor junction is mainly due to the majority carriers. Three distinctly different mechanisms exist in a Schottky diode: diffusion of the semiconductor carriers in metal, thermionic emission-diffusion (TED) of carriers through a Schottky gate, and a mechanical quantum that pierces a tunnel through the gate. The system was solved by using a coupled Poisson—Boltzmann algorithm. Schottky BH is defined as the difference in energy between the Fermi level and the metal band carrier majority of the metal—semiconductor junction to the semiconductor contacts. The insulating layer converts the MS device in an MIS device and has a strong influence on its current—voltage (I—V) and the parameters of a Schottky barrier from 3.7 to 15 eV. There are several possible reasons for the error that causes a deviation of the ideal behaviour of Schottky diodes with and without an interfacial insulator layer. These include the particular distribution of interface states, the series resistance, bias voltage and temperature. The GaAs and its large concentration values of trap centers will participate in an increase in the process of thermionic electrons and holes, which will in turn act on the I—V characteristic of the diode, and an overflow maximum value [NT = 3 × 1020] is obtained. The I—V characteristics of Schottky diodes are in the hypothesis of a parabolic summit.

Seeing laser scalpel: a novel monolithic high-power diode pumped Tm:YAG laser system at 2.02 μm with double-clad fiber combined OCT

NASA Astrophysics Data System (ADS)

Messner, Manuel; Heinrich, Arne; Hagen, Clemens; Unterrainer, Karl

2017-02-01

We report on a novel monolithic high-power diode pumped Tm:YAG laser at 2.02 μm. The pulsed laser generates average output power and pulse energy of beyond 90W and 900mJ in 400 μs pulses, respectively. This wavelength allows usage of standard fused silica fibers and optics, a price competitive solution for minimally-invasive endoscopic surgery. Recent developments in double-clad fiber combiners enable a rugged delivery system for the laser and the OCT ideal for a seeing laser scalpel. This gives the possibility to detect in-depth underlying tissue not yet ablated by the laser in a 2D or 3D fashion with micrometer resolution.

Transparent active matrix organic light-emitting diode displays driven by nanowire transistor circuitry.

PubMed

Ju, Sanghyun; Li, Jianfeng; Liu, Jun; Chen, Po-Chiang; Ha, Young-Geun; Ishikawa, Fumiaki; Chang, Hsiaokang; Zhou, Chongwu; Facchetti, Antonio; Janes, David B; Marks, Tobin J

2008-04-01

Optically transparent, mechanically flexible displays are attractive for next-generation visual technologies and portable electronics. In principle, organic light-emitting diodes (OLEDs) satisfy key requirements for this application-transparency, lightweight, flexibility, and low-temperature fabrication. However, to realize transparent, flexible active-matrix OLED (AMOLED) displays requires suitable thin-film transistor (TFT) drive electronics. Nanowire transistors (NWTs) are ideal candidates for this role due to their outstanding electrical characteristics, potential for compact size, fast switching, low-temperature fabrication, and transparency. Here we report the first demonstration of AMOLED displays driven exclusively by NW electronics and show that such displays can be optically transparent. The displays use pixel dimensions suitable for hand-held applications, exhibit 300 cd/m2 brightness, and are fabricated at temperatures suitable for integration on plastic substrates.

Investigation of CuInSe2 nanowire arrays with core-shell structure electrodeposited at various duty cycles into anodic alumina templates

NASA Astrophysics Data System (ADS)

Cheng, Yu-Song; Wang, Na-Fu; Tsai, Yu-Zen; Lin, Jia-Jun; Houng, Mau-Phon

2017-02-01

Copper indium selenide (CuInSe2) nanowire (NW) arrays were prepared at various electrolyte duty cycles by filling anodic alumina templates through the pulsed electrodeposition technique. X-ray diffraction and scanning electron microscopy (SEM) images showed that the nucleation mechanism of CuInSe2 NW arrays was affected by the electrodeposition duty cycle. Moreover, SEM images showed that the diameter and length of the NWs were 80 nm and 2 μm, respectively. Furthermore, PEDOT/CuInSe2 NW core-shell arrays were fabricated using surfactant-modified CuInSe2 NW surfaces showing the lotus effect. Transmission electron microscopy images confirmed that a core-shell structure was achieved. Current-voltage plots revealed that the CuInSe2 NW arrays were p-type semiconductors; moreover, the core-shell structure improved the diode ideality factor from 3.91 to 2.63.

Superconducting micro-resonator arrays with ideal frequency spacing

NASA Astrophysics Data System (ADS)

Liu, X.; Guo, W.; Wang, Y.; Dai, M.; Wei, L. F.; Dober, B.; McKenney, C. M.; Hilton, G. C.; Hubmayr, J.; Austermann, J. E.; Ullom, J. N.; Gao, J.; Vissers, M. R.

2017-12-01

We present a wafer trimming technique for producing superconducting micro-resonator arrays with highly uniform frequency spacing. With the light-emitting diode mapper technique demonstrated previously, we first map the measured resonance frequencies to the physical resonators. Then, we fine-tune each resonator's frequency by lithographically trimming a small length, calculated from the deviation of the measured frequency from its design value, from the interdigitated capacitor. We demonstrate this technique on a 127-resonator array made from titanium-nitride and show that the uniformity of frequency spacing is greatly improved. The array yield in terms of frequency collisions improves from 84% to 97%, while the quality factors and noise properties are unaffected. The wafer trimming technique provides an easy-to-implement tool to improve the yield and multiplexing density of large resonator arrays, which is important for various applications in photon detection and quantum computing.

The controlled growth of graphene nanowalls on Si for Schottky photodetector

NASA Astrophysics Data System (ADS)

Zhou, Quan; Liu, Xiangzhi; Zhang, Enliang; Luo, Shi; Shen, Jun; Wang, Yuefeng; Wei, Dapeng

2017-12-01

Schottky diode with directly-grown graphene on silicon substrate has advantage of clean junction interface, promising for photodetectors with high-speed and low noise. In this report, we carefully studied the influence of growth parameters on the junction quality and photoresponse of graphene nanowalls (GNWs)-based Schottky photodetectors. We found that shorter growth time is critical for lower dark current, but at the same time higher photocurrent. The influence of growth parameters was attributed to the defect density of various growth time, which results in different degrees of surface absorption for H2O/O2 molecules and P-type doping level. Raman characterization and vacuum annealing treatment were carried out to confirm the regulation mechanism. Meanwhile, the release of thermal stress also makes the ideality factor η of thinner sample better than the thicker. Our results are important for the response improvement of photodetectors with graphene-Si schottky junction.

Electrical Properties of a p-n Heterojunction of Li-Doped NiO and Al-Doped ZnO for Thermoelectrics

NASA Astrophysics Data System (ADS)

Desissa, Temesgen D.; Schrade, Matthias; Norby, Truls

2018-06-01

The electrical properties of a p-n heterojunction of polycrystalline p-type Ni0.98Li0.02O and n-type Zn0.98Al0.02O have been investigated for potential applications in high-temperature oxide-based thermoelectric generators without metallic interconnects. Current-voltage characteristics of the junction were measured in a two-electrode setup in ambient air at 500-1000°C. The resistance and rectification of the junction decreased with increasing temperature. A non-ideal Shockley diode model was used to fit the measured current-voltage data in order to extract characteristic parameters of the junction, such as area-specific series resistance R s and parallel shunt resistance R p, non-ideality factor, and the saturation current density. R s and R p decreased exponentially with temperature, with activation energies of 0.4 ± 0.1 eV and 1.1 ± 0.2 eV, respectively. The interface resistance of the direct p-n junction studied here is as such too high for practical applications in thermoelectrics. However, it is demonstrated that it can be reduced by an order of magnitude by using a composite of the individual materials at the interface, yielding a large effective contact area.

In-Situ Analysis System for Correlated Electron Heterostructures

DTIC Science & Technology

2014-11-20

semiconductor materials and elemental metals. Specifically, films must be pristine and ideally remain intact during analytical procedure [1]. In addition...involves a rather complex engineering design described below. A laser heater ! (a) ! (b) ! 1 Figure 1. (a) An empty Neocera’s sample holder rack...the center of the analytical chamber. (fiber-coupled, high-power 808 nm diode laser JOLD -100-CPXF-2P, Jenoptik), is free of such limitations because

GreenLight HPS laser 120-W versus diode laser 200-W vaporization of the prostate: comparative clinical experience.

PubMed

Chiang, Po Hui; Chen, Chien Hsu; Kang, Chih Hsiung; Chuang, Yao Chi

2010-09-01

We present our clinical experiences of two recently introduced vaporization laser systems: the GreenLight High Performance System (HPS) laser (532 nm, 120 W) and the Diolas LFD diode laser (980 nm, 200 W). Two laser systems were evaluated to compare their clinical results for the treatment of benign prostatic hyperplasia (BPH). Patients were treated using either the GreenLight HPS laser (n = 84) or the diode laser (n = 55) in a prospective randomized study. The data of International Prostate Symptom Score (IPSS), maximum flow rate (Q(max)), post-void residual urine (PVR), and quality of life score (Qols) were recorded at baseline, 1-, 6-, and 12-month follow-ups. The prostate volume and prostate-specific antigen (PSA) level were assessed at baseline and 6-month follow-up. All complications were also recorded. There was a statistically significant difference in IPSS, Q(max), PVR, and QoLs in each laser group at the 1-, 6-, and 12-month follow-ups compared with baseline. There was no statistical significant difference in any of these parameters at any follow-up interval between each group. The diode laser demonstrates superior hemostatic properties compared with the GreenLight HPS laser. Postoperative incontinence and postoperative irritative symptoms are more pronounced (P < 0.05) after diode laser prostatectomy. Higher incidence of dysuria with sloughing tissues and epididymitis (P < 0.05) is noted after diode laser prostatectomy. Other complications were comparable for both procedures. Although both lasers can improve subjective and objective parameters of BPH, both can produce undesired effects. The search for the ideal vaporization laser to treat BPH still continues. 2010 Wiley-Liss, Inc.

Measuring the Electronic Properties of DNA-Specific Schottky Diodes Towards Detecting and Identifying Basidiomycetes DNA

PubMed Central

Periasamy, Vengadesh; Rizan, Nastaran; Al-Ta’ii, Hassan Maktuff Jaber; Tan, Yee Shin; Tajuddin, Hairul Annuar; Iwamoto, Mitsumasa

2016-01-01

The discovery of semiconducting behavior of deoxyribonucleic acid (DNA) has resulted in a large number of literatures in the study of DNA electronics. Sequence-specific electronic response provides a platform towards understanding charge transfer mechanism and therefore the electronic properties of DNA. It is possible to utilize these characteristic properties to identify/detect DNA. In this current work, we demonstrate a novel method of DNA-based identification of basidiomycetes using current-voltage (I-V) profiles obtained from DNA-specific Schottky barrier diodes. Electronic properties such as ideality factor, barrier height, shunt resistance, series resistance, turn-on voltage, knee-voltage, breakdown voltage and breakdown current were calculated and used to quantify the identification process as compared to morphological and molecular characterization techniques. The use of these techniques is necessary in order to study biodiversity, but sometimes it can be misleading and unreliable and is not sufficiently useful for the identification of fungi genera. Many of these methods have failed when it comes to identification of closely related species of certain genus like Pleurotus. Our electronics profiles, both in the negative and positive bias regions were however found to be highly characteristic according to the base-pair sequences. We believe that this simple, low-cost and practical method could be useful towards identifying and detecting DNA in biotechnology and pathology. PMID:27435636

Measuring the Electronic Properties of DNA-Specific Schottky Diodes Towards Detecting and Identifying Basidiomycetes DNA

NASA Astrophysics Data System (ADS)

Periasamy, Vengadesh; Rizan, Nastaran; Al-Ta'Ii, Hassan Maktuff Jaber; Tan, Yee Shin; Tajuddin, Hairul Annuar; Iwamoto, Mitsumasa

2016-07-01

The discovery of semiconducting behavior of deoxyribonucleic acid (DNA) has resulted in a large number of literatures in the study of DNA electronics. Sequence-specific electronic response provides a platform towards understanding charge transfer mechanism and therefore the electronic properties of DNA. It is possible to utilize these characteristic properties to identify/detect DNA. In this current work, we demonstrate a novel method of DNA-based identification of basidiomycetes using current-voltage (I-V) profiles obtained from DNA-specific Schottky barrier diodes. Electronic properties such as ideality factor, barrier height, shunt resistance, series resistance, turn-on voltage, knee-voltage, breakdown voltage and breakdown current were calculated and used to quantify the identification process as compared to morphological and molecular characterization techniques. The use of these techniques is necessary in order to study biodiversity, but sometimes it can be misleading and unreliable and is not sufficiently useful for the identification of fungi genera. Many of these methods have failed when it comes to identification of closely related species of certain genus like Pleurotus. Our electronics profiles, both in the negative and positive bias regions were however found to be highly characteristic according to the base-pair sequences. We believe that this simple, low-cost and practical method could be useful towards identifying and detecting DNA in biotechnology and pathology.

Research on the electrical characteristics of the Pt/CdS Schottky diode

NASA Astrophysics Data System (ADS)

Ding, Jia-xin; Zhang, Xiang-feng; Yao, Guansheng

2013-08-01

With the development of technology, the demand for semiconductor ultraviolet detector is increasing day by day. Compared with the traditional infrared detector in missile guidance, ultraviolet/infrared dual-color detection can significantly improve the anti-interference ability of the missile. According to the need of missile guidance and other areas of the application of ultraviolet detector, the paper introduces a manufacture of the CdS Schottky barrier ultraviolet detector. By using the radio frequency magnetron sputtering technology, a Pt thin film layer is sputtered on CdS basement to form a Schottky contact firstly. Then the indium ohmic contact electrode is fabricated by thermal evaporation method, and eventually a Pt/CdS/In Schottky diode is formed. The I-V characteristic of the device was tested at room temperature, its zero bias current and open circuit voltage is -0.578nA and 130mV, respectively. Test results show that the the Schottky contact has been formed between Pt and CdS. The device has good rectifying characteristics. According to the thermionic emission theory, the I-V curve fitting analysis of the device was studied under the condition of small voltage. The ideality factor and Schottky barrier height is 1.89 and 0.61eV, respectively. The normalized spectral responsivity at zero bias has been tested. The device has peak responsivity at 500nm, and it cutoff at 510nm.

High performance unipolar MoTe2 field effect transistors enabled by doping and Al2O3 capping

NASA Astrophysics Data System (ADS)

Qu, Deshun; Liu, Xiaochi; Ahmed, Faisal; Yoo, Won Jong

We carry out the first systematic experiment on carrier type modulation of MoTe2 FET in this work. unipolar p- and n-type MoTe2 FETs with 105 and 106 on-off ratios are achieved through rapid thermal annealing (RTA) and Benzyl Viologen (BV) doping respectively. By varying the vacuum level in RTA chamber before annealing and BV dopant concentration, annealing condition, both hole and electron doping concentration can be modulated in a wide range from slight doping to degenerate like doping. Furthermore, Al2O3 is deposited onto the device surfaces for the mobility engineering. Hole and electron mobilities are improved to 62 cm2/Vs and 82 cm2/Vs respectively after Al2O3 capping; they are among the highest carrier mobilities of MoTe2 transistors ever obtained. A lateral homogeneous MoTe2 p-n diode is fabricated combining the electron and hole doping techniques, the device displays excellent diode properties with a high rectification ratio of 104 at 0 gate bias and an ideality factor of 1.2. This work was supported by the Global Research Laboratory and Global Frontier R&D Programs at the Center for Hybrid Interface Materials, both funded by the Ministry of Science, ICT & Future Planning via the National Research Foundation of Korea (NRF).

Calibration of entrance dose measurement for an in vivo dosimetry programme.

PubMed

Ding, W; Patterson, W; Tremethick, L; Joseph, D

1995-11-01

An increasing number of cancer treatment centres are using in vivo dosimetry as a quality assurance tool for verifying dosimetry as either the entrance or exit surface of the patient undergoing external beam radiotherapy. Equipment is usually limited to either thermoluminescent dosimeters (TLD) or semiconductor detectors such as p-type diodes. The semiconductor detector is more popular than the TLD due to the major advantage of real time analysis of the actual dose delivered. If a discrepancy is observed between the calculated and the measured entrance dose, it is possible to eliminate several likely sources of errors by immediately verifying all treatment parameters. Five Scanditronix EDP-10 p-type diodes were investigated to determine their calibration and relevant correction factors for entrance dose measurements using a Victoreen White Water-RW3 tissue equivalent phantom and a 6 MV photon beam from a Varian Clinac 2100C linear accelerator. Correction factors were determined for individual diodes for the following parameters: source to surface distance (SSD), collimator size, wedge, plate (tray) and temperature. The directional dependence of diode response was also investigated. The SSD correction factor (CSSD) was found to increase by approximately 3% over the range of SSD from 80 to 130 cm. The correction factor for collimator size (Cfield) also varied by approximately 3% between 5 x 5 and 40 x 40 cm2. The wedge correction factor (Cwedge) and plate correction factor (Cplate) were found to be a function of collimator size. Over the range of measurement, these factors varied by a maximum of 1 and 1.5%, respectively. The Cplate variation between the solid and the drilled plates under the same irradiation conditions was a maximum of 2.4%. The diode sensitivity demonstrated an increase with temperature. A maximum of 2.5% variation for the directional dependence of diode response was observed for angle of +/- 60 degrees. In conclusion, in vivo dosimetry is an important and reliable method for checking the dose delivered to the patient. Preclinical calibration and determination of the relevant correction factors for each diode are essential in order to achieve a high accuracy of dose delivered to the patient.

Self-contained sub-millimeter wave rectifying antenna integrated circuit

NASA Technical Reports Server (NTRS)

Siegel, Peter H. (Inventor)

2004-01-01

The invention is embodied in a monolithic semiconductor integrated circuit in which is formed an antenna, such as a slot dipole antenna, connected across a rectifying diode. In the preferred embodiment, the antenna is tuned to received an electromagnetic wave of about 2500 GHz so that the device is on the order of a wavelength in size, or about 200 microns across and 30 microns thick. This size is ideal for mounting on a microdevice such as a microrobot for example. The antenna is endowed with high gain in the direction of the incident radiation by providing a quarter-wavelength (30 microns) thick resonant cavity below the antenna, the cavity being formed as part of the monolithic integrated circuit. Preferably, the integrated circuit consists of a thin gallium arsenide membrane overlying the resonant cavity and supporting an epitaxial Gallium Arsenide semiconductor layer. The rectifying diode is a Schottky diode formed in the GaAs semiconductor layer and having an area that is a very small fraction of the wavelength of the 2500 GHz incident radiation. The cavity provides high forward gain in the antenna and isolation from surrounding structure.

Small field out-put factors comparison between ion chambers and diode dedectors for different photon energies

NASA Astrophysics Data System (ADS)

Tas, B.; Durmus, I. F.

2018-02-01

To compare small fields out-put factors of linear accelerator by using different ion chambers and diode dedectors for different photon energies. We measured small fields (1×1 to 5×5 cm2) out-put factors by using IBA® cc003 nano chamber, cc01 Razor, cc01, cc04, cc13, fc65 ion chambers and SFD, Razor diode dedectors for 6MV, 10MV, 15MV, 6MV FFF and 10MV FFF energies. We determined the most compatible out-put factors between ion chamber and diode dedector by using cc003 nano ion chamber for 1×1cm2 field size. We determined less than %2 dose difference between cc003 nano chamber, cc01 Razor, cc01, cc04 and cc13 ion chambers from 2×2 to 5×5 cm2. We determined %12±2 and %13±1 underestimate doses by using cc01 and cc13 ion chambers, also we determined %57±2 underesimate dose by using fc65 ion chamber's than razor diode for 1×1 cm2 field size. These results show that we shouldn't measure out-put factors of 1×1 cm2 field size by using cc01, cc13 and fc65 ion chambers. The dose difference between SFD and Razor diodes were determined less than %1.5. If we would like to use ion chambers for ≤1×1cm2 field size out-put measurement, we should use correction factor while commisionning linear accelerator. Otherwise we could determine underestimate dose by using ion chambers.

Innovative Facet Passivation for High-Brightness Laser Diodes

DTIC Science & Technology

2016-02-05

and anti-reflection (AR) coatings are deposited after cleaving. Edge- emitting laser diodes emit very high optical powers from small emission areas, as...SECURITY CLASSIFICATION OF: The objective of this effort is to increase the power of low fill-factor (20%) laser diode (LD) bars from the present...2012 16-Nov-2015 Approved for Public Release; Distribution Unlimited Final Report: Innovative Facet Passivation for High-Brightness Laser Diodes The

Design and experimental testing of air slab caps which convert commercial electron diodes into dual purpose, correction-free diodes for small field dosimetry.

PubMed

Charles, P H; Cranmer-Sargison, G; Thwaites, D I; Kairn, T; Crowe, S B; Pedrazzini, G; Aland, T; Kenny, J; Langton, C M; Trapp, J V

2014-10-01

Two diodes which do not require correction factors for small field relative output measurements are designed and validated using experimental methodology. This was achieved by adding an air layer above the active volume of the diode detectors, which canceled out the increase in response of the diodes in small fields relative to standard field sizes. Due to the increased density of silicon and other components within a diode, additional electrons are created. In very small fields, a very small air gap acts as an effective filter of electrons with a high angle of incidence. The aim was to design a diode that balanced these perturbations to give a response similar to a water-only geometry. Three thicknesses of air were placed at the proximal end of a PTW 60017 electron diode (PTWe) using an adjustable "air cap". A set of output ratios (ORDet (fclin) ) for square field sizes of side length down to 5 mm was measured using each air thickness and compared to ORDet (fclin) measured using an IBA stereotactic field diode (SFD). kQclin,Qmsr (fclin,fmsr) was transferred from the SFD to the PTWe diode and plotted as a function of air gap thickness for each field size. This enabled the optimal air gap thickness to be obtained by observing which thickness of air was required such that kQclin,Qmsr (fclin,fmsr) was equal to 1.00 at all field sizes. A similar procedure was used to find the optimal air thickness required to make a modified Sun Nuclear EDGE detector (EDGEe) which is "correction-free" in small field relative dosimetry. In addition, the feasibility of experimentally transferring kQclin,Qmsr (fclin,fmsr) values from the SFD to unknown diodes was tested by comparing the experimentally transferred kQclin,Qmsr (fclin,fmsr) values for unmodified PTWe and EDGEe diodes to Monte Carlo simulated values. 1.0 mm of air was required to make the PTWe diode correction-free. This modified diode (PTWeair) produced output factors equivalent to those in water at all field sizes (5-50 mm). The optimal air thickness required for the EDGEe diode was found to be 0.6 mm. The modified diode (EDGEeair) produced output factors equivalent to those in water, except at field sizes of 8 and 10 mm where it measured approximately 2% greater than the relative dose to water. The experimentally calculated kQclin,Qmsr (fclin,fmsr) for both the PTWe and the EDGEe diodes (without air) matched Monte Carlo simulated results, thus proving that it is feasible to transfer kQclin,Qmsr (fclin,fmsr) from one commercially available detector to another using experimental methods and the recommended experimental setup. It is possible to create a diode which does not require corrections for small field output factor measurements. This has been performed and verified experimentally. The ability of a detector to be "correction-free" depends strongly on its design and composition. A nonwater-equivalent detector can only be "correction-free" if competing perturbations of the beam cancel out at all field sizes. This should not be confused with true water equivalency of a detector.

An Optical Fiber Communication System Based on Coherent Modulation. Part 1.

DTIC Science & Technology

1985-06-01

the’ local oscillator signal. In the receiver the two signals are recombined optically using a single mode fiber coupler or a beam splitter , and the...Fig. 2. Design of practical systems may imply the use of non - ideal laser diodes. In a cooperation with British Telecom Research Labora- tories we...frequency stabilisation *the transmission fiber - *injection locking of semiconductor lasers *the coherent receiver Our next target is complete design

Quantum thermal diode based on two interacting spinlike systems under different excitations.

PubMed

Ordonez-Miranda, Jose; Ezzahri, Younès; Joulain, Karl

2017-02-01

We demonstrate that two interacting spinlike systems characterized by different excitation frequencies and coupled to a thermal bath each, can be used as a quantum thermal diode capable of efficiently rectifying the heat current. This is done by deriving analytical expressions for both the heat current and rectification factor of the diode, based on the solution of a master equation for the density matrix. Higher rectification factors are obtained for lower heat currents, whose magnitude takes their maximum values for a given interaction coupling proportional to the temperature of the hotter thermal bath. It is shown that the rectification ability of the diode increases with the excitation frequencies difference, which drives the asymmetry of the heat current, when the temperatures of the thermal baths are inverted. Furthermore, explicit conditions for the optimization of the rectification factor and heat current are explicitly found.

Highly reliable high-power AlGaAs/GaAs 808 nm diode laser bars

NASA Astrophysics Data System (ADS)

Hülsewede, R.; Schulze, H.; Sebastian, J.; Schröder, D.; Meusel, J.; Hennig, P.

2007-02-01

There are strong demands at the market to increase power and reliability for 808 nm diode laser bars. Responding to this JENOPTIK Diode Lab GmbH developed high performance 808 nm diode laser bars in the AlGaAs/GaAs material system with special emphasis to high power operation and long term stability. Optimization of the epitaxy structure and improvements in the diode laser bar design results in very high slope efficiency of >1.2 W/A, low threshold current and small beam divergence in slow axis direction. Including low serial resistance the overall wall plug efficiency is up to 65% for our 20%, 30% and 50% filling factor 10 mm diode laser bars. With the JENOPTIK Diode Lab cleaving and coating technique the maximum output power is 205 W in CW operation and 377 W in QCW operation (200 μs, 2% duty cycle) for bars with 50% filling factor. These bars mounted on micro channel cooled package are showing a very high reliability of >15.000 h. Mounted on conductive cooled package high power operation at 100 W is demonstrated for more than 5000h.

Extracting random numbers from quantum tunnelling through a single diode.

PubMed

Bernardo-Gavito, Ramón; Bagci, Ibrahim Ethem; Roberts, Jonathan; Sexton, James; Astbury, Benjamin; Shokeir, Hamzah; McGrath, Thomas; Noori, Yasir J; Woodhead, Christopher S; Missous, Mohamed; Roedig, Utz; Young, Robert J

2017-12-19

Random number generation is crucial in many aspects of everyday life, as online security and privacy depend ultimately on the quality of random numbers. Many current implementations are based on pseudo-random number generators, but information security requires true random numbers for sensitive applications like key generation in banking, defence or even social media. True random number generators are systems whose outputs cannot be determined, even if their internal structure and response history are known. Sources of quantum noise are thus ideal for this application due to their intrinsic uncertainty. In this work, we propose using resonant tunnelling diodes as practical true random number generators based on a quantum mechanical effect. The output of the proposed devices can be directly used as a random stream of bits or can be further distilled using randomness extraction algorithms, depending on the application.

Feasibility of 3D printed air slab diode caps for small field dosimetry.

PubMed

Perrett, Benjamin; Charles, Paul; Markwell, Tim; Kairn, Tanya; Crowe, Scott

2017-09-01

Commercial diode detectors used for small field dosimetry introduce a field-size-dependent over-response relative to an ideal, water-equivalent dosimeter due to high density components in the body of the detector. An air gap above the detector introduces a field-size-dependent under-response, and can be used to offset the field-size-dependent detector over-response. Other groups have reported experimental validation of caps containing air gaps for use with several types of diodes in small fields. This paper examines two designs for 3D printed diode air caps for the stereotactic field diode (SFD)-a cap containing a sealed air cavity, and a cap with an air cavity at the face of the SFD. Monte Carlo simulations of both designs were performed to determine dimensions for an air cavity to introduce the desired dosimetric correction. Various parameter changes were also simulated to estimate the dosimetric uncertainties introduced by 3D printing. Cap layer dimensions, cap density changes due to 3D printing, and unwanted air gaps were considered. For the sealed design the optimal air gap size for water-equivalent cap material was 0.6 mm, which increased to 1.0 mm when acrylonitrile butadiene styrene in the cap was simulated. The unsealed design had less variation, a 0.4 mm air gap is optimal in both situations. Unwanted air pockets in the bore of the cap and density changes introduced by the 3D printing process can potentially introduce significant dosimetric effects. These effects may be limited by using fine print resolutions and minimising the volume of cap material.

Influence of different approaches for dynamical performance optimization of monolithic passive colliding-pulse mode-locked laser diodes emitting around 850 nm

NASA Astrophysics Data System (ADS)

Prziwarka, T.; Klehr, A.; Wenzel, H.; Fricke, J.; Bugge, F.; Weyers, M.; Knigge, A.; Tränkle, G.

2018-02-01

Monolithic laser diodes which generate short infrared pulses in the picosecond and sub-picosecond ranges with high peak power are ideal sources for many applications like e.g. THz-time-domain spectroscopy (TDS) scanning systems. The achievable THz bandwidth is limited by the length of the optical pulses. Due to the fact that colliding-pulse mode locking (CPM) leads to the shortest pulses which could reached by passive mode locking, we experimentally investigated in detail the dynamical and electro optical performance of InGaAsP based quantum well CPM laser diodes with well-established vertical layer structures. Simple design modifications whose implementation is technically easy were realized. Improvements of the device performance in terms of pulse duration, output power, and noise properties are presented in dependence on the different adaptions. From the results we extract an optimized configuration with which we have reached pulses with durations of ≍1.5 ps, a peak power of > 1 W and a pulse-to-pulse timing jitter < 200 fs. The laser diodes emit pulses at a wavelength around 850 nm with a repetition frequency of ≍ 12.4 GHz and could be used as pump source for GaAs antennas to generate THz-radiation. Approaches for reducing pulse width, increasing output power, and improving noise performance are described.

Self-Pinched Transport Theory for the SABRE Ion Diode

NASA Astrophysics Data System (ADS)

Welch, Dale R.; Olson, Craig L.; Hanson, David L.

1997-05-01

In anticipation of a 90 kA 4 MV SABRE ion diode experiment, we have been examining self-pinch transport of ions for application to ion-driven inertial confinement fusion. The Li^+3 beam will exit the diode with a 30-40 mradian divergence and a shallow focusing angle of 75 mradians. The beam is annular with an 4.6-cm inner radius and a 6.8-cm outer radius. Self-pinch theory and simulation predict that large residual currents are possible in 2-20 mtorr argon gas. The simulations suggest that ≈ 50 kA of Li particle current is necessary to contain the beam's transverse momentum. Some non-ideal effects include large beam divergence, large focusing angle and beam annularity. To address these problems, we have been studying the benefits of beam conditioning in the focus region between the diode and the self pinch region after the beam has reached a small radius. We have found some benefit from including a passive conical structure and a low-pressure gas. A significant lens effect can be attained using only the beam fields in vacuum or a low pressure gas. In this configuration, a large focusing force, that keeps the ions off an inner cone and outer wall as the beam converges, has been calculated using the numerical simulation code uc(iprop.) Results from integrated simulation of the condition cell and self-pinch region look encouraging.

Functionalized Graphitic Carbon Nitride for Metal-free, Flexible and Rewritable Nonvolatile Memory Device via Direct Laser-Writing

PubMed Central

Zhao, Fei; Cheng, Huhu; Hu, Yue; Song, Long; Zhang, Zhipan; Jiang, Lan; Qu, Liangti

2014-01-01

Graphitic carbon nitride nanosheet (g-C3N4-NS) has layered structure similar with graphene nanosheet and presents unusual physicochemical properties due to the s-triazine fragments. But their electronic and electrochemical applications are limited by the relatively poor conductivity. The current work provides the first example that atomically thick g-C3N4-NSs are the ideal candidate as the active insulator layer with tunable conductivity for achieving the high performance memory devices with electrical bistability. Unlike in conventional memory diodes, the g-C3N4-NSs based devices combined with graphene layer electrodes are flexible, metal-free and low cost. The functionalized g-C3N4-NSs exhibit desirable dispersibility and dielectricity which support the all-solution fabrication and high performance of the memory diodes. Moreover, the flexible memory diodes are conveniently fabricated through the fast laser writing process on graphene oxide/g-C3N4-NSs/graphene oxide thin film. The obtained devices not only have the nonvolatile electrical bistability with great retention and endurance, but also show the rewritable memory effect with a reliable ON/OFF ratio of up to 105, which is the highest among all the metal-free flexible memory diodes reported so far, and even higher than those of metal-containing devices. PMID:25073687

CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES: Research on reverse recovery characteristics of SiGeC p-i-n diodes

NASA Astrophysics Data System (ADS)

Gao, Yong; Liu, Jing; Yang, Yuan

2008-12-01

This paper analyses the reverse recovery characteristics and mechanism of SiGeC p-i-n diodes. Based on the integrated systems engineering (ISE) data, the critical physical models of SiGeC diodes are proposed. Based on hetero-junction band gap engineering, the softness factor increases over six times, reverse recovery time is over 30% short and there is a 20% decrease in peak reverse recovery current for SiGeC diodes with 20% of germanium and 0.5% of carbon, compared to Si diodes. Those advantages of SiGeC p-i-n diodes are more obvious at high temperature. Compared to lifetime control, SiGeC technique is more suitable for improving diode properties and the tradeoff between reverse recovery time and forward voltage drop can be easily achieved in SiGeC diodes. Furthermore, the high thermal-stability of SiGeC diodes reduces the costs of further process steps and offers more freedoms to device design.

Investigation on emission characteristics of metal-ceramic cathode applied to industrial X-ray diode.

PubMed

Xun, Ma; Jianqiang, Yuan; Hongwei, Liu; Hongtao, Li; Lingyun, Wang; Ping, Jiang

2016-06-01

The industrial x-ray diode with high impedance configuration is usually adopted to generate repetitive x-ray, but its performance would be worsened due to lower electric field on the cathode of diode when a voltage of several hundreds of kV is applied. To improve its performance, a novel metal-ceramic cathode is proposed in this paper. Key factors (width, relative permittivity of ceramic, and so on) affecting electric field distribution on triple points are analyzed by electrostatic field calculation program, so as to optimize the design of this novel cathode. Experiments are done to study the characteristics including emission current of cathode, diode voltage duration, diode mean dynamic impedance, and diode impedance drop velocity within diode power duration. The results show that metal-ceramic cathode could improve diode performance by enhancing emission current and stabling impedance; the impedance drop velocity of diode with spoke-shaped metal-ceramic cathode was reduced to -5 Ω ns(-1) within diode power duration, comparing to -15 Ω ns(-1) with metal foil cathode.

Calculation of DSSC parameters based on ZnO nanorod/TiO2 mesoporous photoanode

NASA Astrophysics Data System (ADS)

Safriani, L.; Nurrida, A.; Mulyana, C.; Susilawati, T.; Bahtiar, A.; Aprilia, A.

2017-07-01

Photoanode of dye sensitized solar cell (DSSC) plays an important role as electron transport media to accept photogenerated electron from excited state of dye. There are several physical properties that are required from photoanode of DSSC. It should be highly transparent, have large surface area, has a conduction band lower than LUMO of dye molecule, has high charge carrier mobility and finally has a good stability in redox electrolyte process. In this work, DSSC with structure FTO/ZnO nanorod/TiO2 mesoporous/Ru-dye/gel electrolyte/ Pt/FTO has been fabricated. In order to modified the structures of photoanode, ZnO nanorod was grown on aluminium doped ZnO seed layer by variation concentration of Al (0 wt%, 0.5 wt% and 1.0 wt%). Zinc nitrate hexahydrate and hexamethylenetetramine used as raw materials for ZnO nanorod growth solution and deposited by self-assembly methods on FTO/Al doped ZnO seed layer. It is then followed by deposition of titania (TiO2) paste by screen printing methods. DSSC parameters i.e. ideally factor (n), series resistance (RS ), and shunt resistance (RSH ) was derived from current density-voltage (I-V) curve using the simplify equation of ideal diode model. The influences of ZnO photoanode structures to the solar cell performance will be completely discussed.

Tandem organic light-emitting diodes with KBH4 doped 9,10-bis(3-(pyridin-3-yl)phenyl) anthracene connected to the charge generation layer.

PubMed

Duan, Lian; Tsuboi, Taiju; Qiu, Yong; Li, Yanrui; Zhang, Guohui

2012-06-18

Tandem organic light emitting diodes (OLEDs) are ideal for lighting applications due to their low working current density at high brightness. In this work, we have studied an efficient electron transporting layer of KBH(4) doped 9,10-bis(3-(pyridin-3-yl)phenyl)anthracene (DPyPA) which is located adjacent to charge generation layer of MoO(3)/NPB. The excellent transporting property of the DPyPA:KBH(4) layer helps the tandem OLED to achieve a lower voltage than the tandem device with the widely used tris-(8-hydroxyquinoline)aluminum:Li. For the tandem white OLED with a fluorescent blue unit and a phosphorescent yellow unit, we've achieved a high current efficiency of 75 cd/A, which can be further improved to 120 cd/A by attaching a diffuser layer.

Zinc Sulphide Overlayer Two-Dimensional Photonic Crystal for Enhanced Extraction of Light from a Micro Cavity Light-Emitting Diode

NASA Astrophysics Data System (ADS)

Mastro, Michael A.; Kim, Chul Soo; Kim, Mijin; Caldwell, Josh; Holm, Ron T.; Vurgaftman, Igor; Kim, Jihyun; Eddy, Charles R., Jr.; Meyer, Jerry R.

2008-10-01

A two-dimensional (2D) ZnS photonic crystal was deposited on the surface of a one-dimensional (1D) III-nitride micro cavity light-emitting diode (LED), to intermix the light extraction features of both structures (1D+2D). The deposition of an ideal micro-cavity optical thickness of ≈λ/2 is impractical for III-nitride LEDs, and in realistic multi-mode devices a large fraction of the light is lost to internal refraction as guided light. Therefore, a 2D photonic crystal on the surface of the LED was used to diffract and thus redirect this guided light out of the semiconductor over several hundred microns. Additionally, the employment of a post-epitaxy ZnS 2D photonic crystal avoided the typical etching into the GaN:Mg contact layer, a procedure which can cause damage to the near surface.

Non-Toxic Gold Nanoclusters for Solution-Processed White Light-Emitting Diodes.

PubMed

Chao, Yu-Chiang; Cheng, Kai-Ping; Lin, Ching-Yi; Chang, Yu-Li; Ko, Yi-Yun; Hou, Tzu-Yin; Huang, Cheng-Yi; Chang, Walter H; Lin, Cheng-An J

2018-06-11

Solution-processed optoelectronic devices are attractive because of the potential low-cost fabrication and the compatibility with flexible substrate. However, the utilization of toxic elements such as lead and cadmium in current optoelectronic devices on the basis of colloidal quantum dots raises environmental concerns. Here we demonstrate that white-light-emitting diodes can be achieved by utilizing non-toxic and environment-friendly gold nanoclusters. Yellow-light-emitting gold nanoclusters were synthesized and capped with trioctylphosphine. These gold nanoclusters were then blended with the blue-light-emitting organic host materials to form the emissive layer. A current efficiency of 0.13 cd/A was achieved. The Commission Internationale de l'Eclairage chromaticity coordinates of (0.27, 0.33) were obtained from our experimental analysis, which is quite close to the ideal pure white emission coordinates (0.33, 0.33). Potential applications include innovative lighting devices and monitor backlight.

Design and simulation of a novel high-efficiency cooling heat-sink structure using fluid-thermodynamics

NASA Astrophysics Data System (ADS)

Hongqi, Jing; Li, Zhong; Yuxi, Ni; Junjie, Zhang; Suping, Liu; Xiaoyu, Ma

2015-10-01

A novel high-efficiency cooling mini-channel heat-sink structure has been designed to meet the package technology demands of high power density laser diode array stacks. Thermal and water flowing characteristics have been simulated using the Ansys-Fluent software. Owing to the increased effective cooling area, this mini-channel heat-sink structure has a better cooling effect when compared with the traditional macro-channel heat-sinks. Owing to the lower flow velocity in this novel high efficient cooling structure, the chillers' water-pressure requirement is reduced. Meanwhile, the machining process of this high-efficiency cooling mini-channel heat-sink structure is simple and the cost is relatively low, it also has advantages in terms of high durability and long lifetime. This heat-sink is an ideal choice for the package of high power density laser diode array stacks. Project supported by the Defense Industrial Technology Development Program (No. B1320133033).

Multi-LED parallel transmission for long distance underwater VLC system with one SPAD receiver

NASA Astrophysics Data System (ADS)

Wang, Chao; Yu, Hong-Yi; Zhu, Yi-Jun; Wang, Tao; Ji, Ya-Wei

2018-03-01

In this paper, a multiple light emitting diode (LED) chips parallel transmission (Multi-LED-PT) scheme for underwater visible light communication system with one photon-counting single photon avalanche diode (SPAD) receiver is proposed. As the lamp always consists of multi-LED chips, the data rate could be improved when we drive these multi-LED chips parallel by using the interleaver-division-multiplexing technique. For each chip, the on-off-keying modulation is used to reduce the influence of clipping. Then a serial successive interference cancellation detection algorithm based on ideal Poisson photon-counting channel by the SPAD is proposed. Finally, compared to the SPAD-based direct current-biased optical orthogonal frequency division multiplexing system, the proposed Multi-LED-PT system could improve the error-rate performance and anti-nonlinearity performance significantly under the effects of absorption, scattering and weak turbulence-induced channel fading together.

Effect of nickel diffusion and oxygen behavior on heterojunction Schottky diodes of Au/NiO/ZnO with a NiO interlayer prepared by radio-frequency magnetron sputtering

NASA Astrophysics Data System (ADS)

Hwang, Jun-Dar; Chen, Hsin-Yu; Chen, Yu-Huang; Ho, Ting-Hsiu

2018-07-01

The rectifying characteristic of Au/ZnO Schottky diodes (SDs) was remarkably improved by introducing a NiO layer in-between the Au and ZnO layers. Compared with the Au/ZnO SDs, the introduction of the NiO layer significantly enhanced the rectification ratio from 1.38 to 1300, and reduced the ideality factor from 5.78 to 2.14. The NiO and ZnO layers were deposited on an indium-tin-oxide/glass substrate by radio-frequency magnetron sputtering. Secondary ion mass spectroscopy showed that Ni atoms diffused from NiO to ZnO, leading to a graded distribution of Ni in ZnO. X-ray diffraction demonstrated that the diffusion of Ni atoms increased the grain size and electron concentration of ZnO. X-ray photoelectron spectroscopy showed that the interstitial oxygen (Oi) atoms in NiO and ZnO compensated the oxygen vacancies (OV) at the NiO/ZnO interface; the amount of OV was significantly reduced, while Oi vanished at the interface. The band diagram revealed a potential drop in the bulk ZnO, owing to the graded distribution of Ni in ZnO, which accelerated the carriers, collected by the outer circuit. The carriers at the NiO/ZnO interface easily crossed over the barrier height, instead of being recombined by OV, owing to the lower amount of OV at the interface.

Distributed Bragg reflector tapered diode lasers emitting more than 10 W at 1154 nm

NASA Astrophysics Data System (ADS)

Feise, D.; Bugge, F.; Matalla, M.; Thies, A.; Ressel, P.; Blume, G.; Hofmann, J.; Paschke, K.

2018-02-01

Distributed Bragg reflector tapered diode lasers (DBR-TPL) emitting at 1154 nm are ideal light sources to be implemented into medical devices and hand-held tools for treatment in dermatology and ophthalmology at 577 nm due to their high spectral radiance enabling second harmonic generation from near infrared to yellow. In this work, we present DBR-TPLs which are able to emit more than 10 W in continuous-wave operation with a narrow spectral emission at 1154 nm and a very good beam quality providing excellent spectral radiance. The investigated DBRTPLs are based on three different epitaxial structures with varying vertical far field angles of 35°, 26°, and 17°. To optimize the coupling efficiency into non-linear crystals we studied DBR-TPL with a vertical far field angle of approx. 17° based on an asymmetrical super large optical cavity epitaxial structure. At a pump current of 18 A these devices are able to emit more than 9 W at 25°C and nearly 11 W at 10°C. The spectral emission is very narrow (ΔλFWHM = 18 pm) and single mode over the entire current range. While the beam quality factor M2 according to the 1/e2-level remains 1.1, the M2 according to second order moments deteriorates when the laser is pumped with higher currents. Therefore, the power content in the central lobe increases somewhat less rapidly than the total power.

Fabrication of n-ZnO/ p-Si (100) and n-ZnO:Al/ p-Si (100) Heterostructures and Study of Current-Voltage, Capacitance-Voltage and Room-Temperature Photoluminescence

NASA Astrophysics Data System (ADS)

Shah, M. A. H.; Khan, M. K. R.; Tanveer Karim, A. M. M.; Rahman, M. M.; Kamruzzaman, M.

2018-01-01

Heterojunction diodes of n-ZnO/ p-Si (100) and n-ZnO:Al/ p-Si (100) were fabricated by spray pyrolysis technique. X-ray diffraction (XRD), energy dispersive x-ray spectroscopy (EDX), and field emission scanning electron microscopy (FESEM) were used to characterize the as-prepared samples. The XRD pattern indicates the hexagonal wurzite structure of zinc oxide (ZnO) and Al-doped ZnO (AZO) thin films grown on Si (100) substrate. The compositional analysis by EDX indicates the presence of Al in the AZO structure. The FESEM image indicates the smooth and compact surface of the heterostructures. The current-voltage characteristics of the heterojunction confirm the rectifying diode behavior at different temperatures and illumination intensities. For low forward bias voltage, the ideality factors were determined to be 1.24 and 1.38 for un-doped and Al-doped heterostructures at room temperature (RT), respectively, which indicates the good diode characteristics. The capacitance-voltage response of the heterojunctions was studied for different oscillation frequencies. From the 1/ C 2- V plot, the junction built-in potentials were found 0.30 V and 0.40 V for un-doped and Al-doped junctions at RT, respectively. The differences in built-in potential for different heterojunctions indicate the different interface state densities of the junctions. From the RT photoluminescence (PL) spectrum of the n-ZnO/ p-Si (100) heterostructure, an intense main peak at near band edge (NBE) 378 nm (3.28 eV) and weak deep-level emissions (DLE) centered at 436 nm (2.84 eV) and 412 nm (3.00 eV) were observed. The NBE emission is attributed to the radiative recombination of the free and bound excitons and the DLE results from the radiative recombination through deep level defects.

Current transport in Pd2Si/n-Si(100) Schottky barrier diodes at low temperatures

NASA Astrophysics Data System (ADS)

Chand, Subhash; Kumar, Jitendra

1996-08-01

The forward current-voltage ( I V) characteristics of Pd2Si/n-Si(100) Schottky barrier diodes are shown to follow the Thermionic Emission-Diffusion (TED) mechanism in the temperature range of 52-295 K. The evaluation of the experimental I V data reveals a decrease of the zero-bias barrier height (ϕ b0) and an increase of the ideality factor (η) with decreasing temperature. Further, the changes in ϕ b0 and η become quite significant below 148 K. It is demonstrated that the findings cannot be explained on the basis of tunneling, generation-recombination and/or image force lowering. Also, the concepts of flat band barrier height and “ T 0-effect” fail to account for the temperature dependence of the barrier parameters. The 1n( I s / T 2) vs 1/ T plot exhibits nonlinearity below 185 K with the linear portion corresponding to an activat ion energy of 0.64 eV, a value smaller than the zero-bias barrier height energy (0.735 eV) of Pd2Si/n-Si Schottky diodes. Similarly, the value of the effective Richardson constant A** turns out to be 1.17 × 104 A m-2 K-2 against the theoretical value of 1.12 × 106 A m-2 K-2. Finally, it is demonstrated that the observed trends result due to barrier height inhomogeneities prevailing at the interface which, in turn, cause extra current such that the I V characteristics continue to remain consistent with the TED process even at low temperatures. The inhomogeneities are believed to have a Gaussian distribution with a mean barrier height of 0.80 V and a standard deviation of 0.05 V at zero-bias. Also, the effect of bias is shown to homogenize barrier heights at a slightly higher mean value.

A Monte Carlo and experimental investigation of the dosimetric behavior of low- and medium-perturbation diodes used for entrance in vivo dosimetry in megavoltage photon beams.

PubMed

Mosleh-Shirazi, Mohammad Amin; Karbasi, Sareh; Shahbazi-Gahrouei, Daryoush; Monadi, Shahram

2012-11-08

Full buildup diodes can cause significant dose perturbation if they are used on most or all of radiotherapy fractions. Given the importance of frequent in vivo measurements in complex treatments, using thin buildup (low-perturbation) diodes instead is gathering interest. However, such diodes are strictly unsuitable for high-energy photons; therefore, their use requires evaluation and careful measurement of correction factors (CFs). There is little published data on such factors for low-perturbation diodes, and none on diode characterization for 9 MV X-rays. We report on MCNP4c Monte Carlo models of low-perturbation (EDD5) and medium-perturbation (EDP10) diodes, and a comparison of source-to-surface distance, field size, temperature, and orientation CFs for cobalt-60 and 9 MV beams. Most of the simulation results were within 4% of the measurements. The results suggest against the use of the EDD5 in axial angles beyond ± 50° and exceeding the range 0° to +50° tilt angle at 9 MV. Outside these ranges, although the EDD5 can be used for accurate in vivo dosimetry at 9 MV, its CF variations were found to be 1.5-7.1 times larger than the EDP10 and, therefore, should be applied carefully. Finally, the MCNP diode models are sufficiently reliable tools for independent verification of potentially inaccurate measurements.

Safety Eye Protection through Use of Fast Acting Optical Switching.

DTIC Science & Technology

1984-01-01

media in which the inhomegeneity is on the order of the wavelength of visible light . At present there are not obvious ideal solutions based simply upon...transitions due to short range diffusion; and (4) inhomogeneous media in which the Inhomegeneity is on the order of the wavelength of visible light At...gallium arsenide diode (850 to 905nm), pulsed ruby (694.3nm), helium-neon (632.8nm) and doubled Nd:YAG (532nm). In the near future iodine (1315nm

Ideal Channel Field Effect Transistors

DTIC Science & Technology

2010-03-01

well as on /?-GaAs/w-GaAs homojunctions grown by molecular beam epitaxy (MBE). The diode I-Vs at reverse bias are plotted below. The measured breakdown...transistors and composite channel InAlAs/InGaAs/lnP/InAlAs high electron mobility transistors ( HEMTs ), which have taken the full advantage of the matched...result in a large number of dislocations in GaAs films epitaxially grown on wurtzite GaN. In this work, we have successfully integrated GaAs with GaN

Asymmetric anode and cathode extraction structure fast recovery diode

NASA Astrophysics Data System (ADS)

Xie, Jiaqiang; Ma, Li; Gao, Yong

2018-05-01

This paper presents an asymmetric anode structure and cathode extraction fast and soft recovery diode. The device anode is partial-heavily doped and partial-lightly doped. The P+ region is introduced into the cathode. Firstly, the characteristics of the diode are simulated and analyzed. Secondly, the diode was fabricated and its characteristics were tested. The experimental results are in good agreement with the simulation results. The results show that, compared with the P–i–N diode, although the forward conduction characteristic of the diode is declined, the reverse recovery peak current is reduced by 47%, the reverse recovery time is shortened by 20% and the softness factor is doubled. In addition, the breakdown voltage is increased by 10%. Project supported by the National Natural Science Foundation of China (No. 51177133).

Pronounced Photovoltaic Response from Multilayered Transition-Metal Dichalcogenides PN-Junctions.

PubMed

Memaran, Shahriar; Pradhan, Nihar R; Lu, Zhengguang; Rhodes, Daniel; Ludwig, Jonathan; Zhou, Qiong; Ogunsolu, Omotola; Ajayan, Pulickel M; Smirnov, Dmitry; Fernández-Domínguez, Antonio I; García-Vidal, Francisco J; Balicas, Luis

2015-11-11

Transition metal dichalcogenides (TMDs) are layered semiconductors with indirect band gaps comparable to Si. These compounds can be grown in large area, while their gap(s) can be tuned by changing their chemical composition or by applying a gate voltage. The experimental evidence collected so far points toward a strong interaction with light, which contrasts with the small photovoltaic efficiencies η ≤ 1% extracted from bulk crystals or exfoliated monolayers. Here, we evaluate the potential of these compounds by studying the photovoltaic response of electrostatically generated PN-junctions composed of approximately 10 atomic layers of MoSe2 stacked onto the dielectric h-BN. In addition to ideal diode-like response, we find that these junctions can yield, under AM-1.5 illumination, photovoltaic efficiencies η exceeding 14%, with fill factors of ~70%. Given the available strategies for increasing η such as gap tuning, improving the quality of the electrical contacts, or the fabrication of tandem cells, our study suggests a remarkable potential for photovoltaic applications based on TMDs.

Local uniqueness solution of illuminated solar cell intrinsic electrical parameters.

PubMed

Jarray, Abdennaceur; Abdelkrim, Mahdi; Bouchiba, Mohamed; Boukricha, Abderrahman

2014-01-01

Starting from an electrical dissipative illuminated one-diode solar cell with a given model data at room temperature (I sc , V oc , R s0 , R sh0 , I max ); we present under physical considerations a specific mathematical method (using the Lambert function) for unique determination of the intrinsic electrical parameters (n, I s , I ph , R s , R sh ). This work proves that for a given arbitrary fixed shunt resistance R sh , the saturation current I S and the ideality factor n are uniquely determined as a function of the photocurrent I ph , and the series resistance R s . The correspondence under the cited physical considerations: R s does not exceed ]0, 20[Ω and n is between ]0, 3[ and I ph and I s are arbitrary positive [Formula: see text] , is biunivocal. This study concludes that for both considered solar cells, the five intrinsic electrical parameters that were determined numerically are unique.

Determination of diffusion coefficient in disordered organic semiconductors

NASA Astrophysics Data System (ADS)

Rani, Varsha; Sharma, Akanksha; Ghosh, Subhasis

2016-05-01

Charge carrier transport in organic semiconductors is dominated by positional and energetic disorder in Gaussian density of states (GDOS) and is characterized by hopping through localized states. Due to the immobilization of charge carriers in these localized states, significant non-uniform carrier distribution exists, resulting diffusive transport. A simple, nevertheless powerful technique to determine diffusion coefficient D in disordered organic semiconductors has been presented. Diffusion coefficients of charge carriers in two technologically important organic molecular semiconductors, Pentacene and copper phthalocyanine (CuPc) have been measured from current-voltage (J-V) characteristics of Al/Pentacene/Au and Al/CuPc/Au based Schottky diodes. Ideality factor g and carrier mobility μ have been calculated from the exponential and space charge limited region respectively of J-V characteristics. Classical Einstein relation is not valid in organic semiconductors due to energetic disorders in DOS. Using generalized Einstein relation, diffusion coefficients have been obtained to be 1.31×10-6 and 1.73×10-7 cm2/s for Pentacene and CuPc respectively.

Fabrication and characterization of a CuO/ITO heterojunction with a graphene transparent electrode

NASA Astrophysics Data System (ADS)

Mageshwari, K.; Han, Sanghoo; Park, Jinsub

2016-05-01

In this paper, we investigate the electrical properties of a CuO-ITO heterojunction diode with the use of a graphene transparent electrode by current-voltage (I-V) characteristics. CuO thin films were deposited onto an ITO substrate by a simple sol-gel spin coating method and annealed at 500 °C. The x-ray diffraction pattern of the CuO thin films revealed the polycrystalline nature of CuO and exhibited a monoclinic crystal structure. FESEM images showed a uniform and densely packed particulate morphology. The optical band gap of CuO thin films estimated using UV-vis absorption spectra was found to be 2.50 eV. The I-V characteristics of the fabricated CuO-ITO heterojunction showed a well-defined rectifying behavior with improved electrical properties after the insertion of graphene. The electronic parameters of the heterostructure such as barrier height, ideality factor and series resistance were determined from the I-V measurements, and the possible current transport mechanism was discussed.

Investigation of mode partition noise in Fabry-Perot laser diode

NASA Astrophysics Data System (ADS)

Guo, Qingyi; Deng, Lanxin; Mu, Jianwei; Li, Xun; Huang, Wei-Ping

2014-09-01

Passive optical network (PON) is considered as the most appealing access network architecture in terms of cost-effectiveness, bandwidth management flexibility, scalability and durability. And to further reduce the cost per subscriber, a Fabry-Perot (FP) laser diode is preferred as the transmitter at the optical network units (ONUs) because of its lower cost compared to distributed feedback (DFB) laser diode. However, the mode partition noise (MPN) associated with the multi-longitudinal-mode FP laser diode becomes the limiting factor in the network. This paper studies the MPN characteristics of the FP laser diode using the time-domain simulation of noise-driven multi-mode laser rate equation. The probability density functions are calculated for each longitudinal mode. The paper focuses on the investigation of the k-factor, which is a simple yet important measure of the noise power, but is usually taken as a fitted or assumed value in the penalty calculations. In this paper, the sources of the k-factor are studied with simulation, including the intrinsic source of the laser Langevin noise, and the extrinsic source of the bit pattern. The photon waveforms are shown under four simulation conditions for regular or random bit pattern, and with or without Langevin noise. The k-factors contributed by those sources are studied with a variety of bias current and modulation current. Simulation results are illustrated in figures, and show that the contribution of Langevin noise to the k-factor is larger than that of the random bit pattern, and is more dominant at lower bias current or higher modulation current.

Commissioning a p-type silicon diode for use in clinical electron beams.

PubMed

Eveling, J N; Morgan, A M; Pitchford, W G

1999-01-01

Commissioning measurements were carried out on a p-type silicon diode detector for use in patient monitoring in high energy electron beams. Characteristics specific to the diode were examined. The variation in diode sensitivity with dose per pulse was found to be less than 1% over a range 0.069-0.237 mGy/pulse. The diode exhibited a sensitivity variation with accumulated dose of 10% per kGy and a sensitivity variation with surface temperature of 0.26%/degree C. The dependence of the diode response on the direction of the incident electron beam was investigated. Results were found to exceed the manufacturer's specifications. Output factors measured with the diode agree to within 1.5% of those measured with an NACP-02 air ionization chamber. The detector showed a variation in response with energy of 0.8% over the energy range 4-15 MeV. Prior to introducing the diode into clinical use, an assessment of beam perturbation directly behind the diode was made. The maximum reduction in local dose directly behind the diode at a depth of 1.0 cm below the surface was approximately 13% at 4 and 15 MeV.

Respiratory complications after diode-laser-assisted tonsillotomy.

PubMed

Fischer, Miloš; Horn, Iris-Susanne; Quante, Mirja; Merkenschlager, Andreas; Schnoor, Jörg; Kaisers, Udo X; Dietz, Andreas; Kluba, Karsten

2014-08-01

Children with certain risk factors, such as comorbidities or severe obstructive sleep apnea syndrome (OSAS) are known to require extended postoperative monitoring after adenotonsillectomy. However, there are no recommendations available for diode-laser-assisted tonsillotomy. A retrospective chart review of 96 children who underwent diode-laser-assisted tonsillotomy (07/2011-06/2013) was performed. Data for general and sleep apnea history, power of the applied diode-laser (λ = 940 nm), anesthesia parameters, the presence of postoperative respiratory complications and postoperative healing were evaluated. After initially uncomplicated diode-laser-assisted tonsillotomy, an adjustment of post-anesthesia care was necessary in 16 of 96 patients due to respiratory failure. Respiratory complications were more frequent in younger children (3.1 vs. 4.0 years, p = 0.049, 95 % CI -1.7952 to -0.0048) and in children who suffered from nocturnal apneas (OR = 5.00, p < 0.01, 95 % CI 1.4780-16.9152) or who suffered from relevant comorbidities (OR = 4.84, p < 0.01, 95 % CI 1.5202-15.4091). Moreover, a diode-laser power higher than 13 W could be identified as a risk factor for the occurrence of a postoperative oropharyngeal edema (OR = 3.45, p < 0.01, 95 % CI 1.3924-8.5602). Postoperative respiratory complications should not be underestimated in children with sleep-disordered breathing (SDB). Therefore, children with SDB, children with comorbidities or children younger than 3 years should be considered "at risk" and children with confirmed moderate to severe OSAS should be referred to a PICU following diode-laser-assisted tonsillotomy. We recommend a reduced diode-laser power (<13 W) to reduce oropharyngeal edema.

A Monte Carlo and experimental investigation of the dosimetric behavior of low‐ and medium‐perturbation diodes used for entrance in vivo dosimetry in megavoltage photon beams

PubMed Central

Mosleh‐Shirazi, Mohammad Amin; Shahbazi‐Gahrouei, Daryoush; Monadi, Shahram

2012-01-01

Full buildup diodes can cause significant dose perturbation if they are used on most or all of radiotherapy fractions. Given the importance of frequent in vivo measurements in complex treatments, using thin buildup (low‐perturbation) diodes instead is gathering interest. However, such diodes are strictly unsuitable for high‐energy photons; therefore, their use requires evaluation and careful measurement of correction factors (CFs). There is little published data on such factors for low‐perturbation diodes, and none on diode characterization for 9 MV X‐rays. We report on MCNP4c Monte Carlo models of low‐perturbation (EDD5) and medium‐perturbation (EDP10) diodes, and a comparison of source‐to‐surface distance, field size, temperature, and orientation CFs for cobalt‐60 and 9 MV beams. Most of the simulation results were within 4% of the measurements. The results suggest against the use of the EDD5 in axial angles beyond ±50° and exceeding the range 0° to +50° tilt angle at 9 MV. Outside these ranges, although the EDD5 can be used for accurate in vivo dosimetry at 9 MV, its CF variations were found to be 1.5–7.1 times larger than the EDP10 and, therefore, should be applied carefully. Finally, the MCNP diode models are sufficiently reliable tools for independent verification of potentially inaccurate measurements. PACS numbers: 87.10.Rt; 87.50.cm; 87.55.km; 87.56.Fc PMID:23149783

Advancements in high-power high-brightness laser bars and single emitters for pumping and direct diode application

NASA Astrophysics Data System (ADS)

An, Haiyan; Jiang, Ching-Long J.; Xiong, Yihan; Zhang, Qiang; Inyang, Aloysius; Felder, Jason; Lewin, Alexander; Roff, Robert; Heinemann, Stefan; Schmidt, Berthold; Treusch, Georg

2015-03-01

We have continuously optimized high fill factor bar and packaging design to increase power and efficiency for thin disc laser system pump application. On the other hand, low fill factor bars packaged on the same direct copper bonded (DCB) cooling platform are used to build multi-kilowatt direct diode laser systems. We have also optimized the single emitter designs for fiber laser pump applications. In this paper, we will give an overview of our recent advances in high power high brightness laser bars and single emitters for pumping and direct diode application. We will present 300W bar development results for our next generation thin disk laser pump source. We will also show recent improvements on slow axis beam quality of low fill factor bar and its application on performance improvement of 4-5 kW TruDiode laser system with BPP of 30 mm*mrad from a 600 μm fiber. Performance and reliability results of single emitter for multiemitter fiber laser pump source will be presented as well.

Implementation of in vivo Dosimetry with Isorad{sup TM} Semiconductor Diodes in Radiotherapy Treatments of the Pelvis

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rodriguez, Miguel L.; Abrego, Eladio; Pineda, Amalia

2008-04-01

This report describes the results obtained with the Isorad{sup TM} (Red) semiconductor detectors for implementing an in vivo dosimetry program in patients subject to radiotherapy treatment of the pelvis. Four n-type semiconductor diodes were studied to characterize them for the application. The diode calibration consisted of establishing reading-to-dose conversion factors in reference conditions and a set of correction factors accounting for deviations of the diode response in comparison to that of an ion chamber. Treatments of the pelvis were performed by using an isocentric 'box' technique employing a beam of 18 MV with the shape of the fields defined bymore » a multileaf collimator. The method of Rizzotti-Leunen was used to assess the dose at the isocenter based on measurements of the in vivo dose at the entrance and at the exit of each radiation field. The in vivo dose was evaluated for a population of 80 patients. The diodes exhibit good characteristics for their use in in vivo dosimetry; however, the high attenuation of the beam ({approx}12% at 5.0-cm depth) produced, and some important correction factors, must be taken into account. The correction factors determined, including the source-to-surface factor, were within a range of {+-}4%. The frequency histograms of the relative difference between the expected and measured doses at the entrance, the exit, and the isocenter, have mean values and standard deviations of -0.09% (2.18%), 0.77% (2.73%), and -0.11% (1.76%), respectively. The method implemented has proven to be very useful in the assessment of the in vivo dose in this kind of treatment.« less

Guidelines on the implementation of diode in vivo dosimetry programs for photon and electron external beam therapy.

PubMed

Alecu, R; Loomis, T; Alecu, J; Ochran, T

1999-01-01

Semiconductor diodes offer many advantages for clinical dosimetry: high sensitivity, real-time readout, simple instrumentation, robustness and air pressure independence. The feasibility and usefulness of in vivo dosimetry with diodes has been shown by numerous publications, but very few, if any, refer to the utilization of diodes in electron beam dosimetry. The purpose of this paper is to present our methods for implementing an effective IVD program for external beam therapy with photons and electrons and to evaluate a new type of diodes. Methods of deciding on reasonable action levels along with calibration procedures, established according to the type of measurements intended to be performed and the action limits, are discussed. Correction factors to account for nonreference clinical conditions for new types of diodes (designed for photon and electron beams) are presented and compared with those required by older models commercially available. The possibilities and limitations of each type of diode are presented, emphasizing the importance of using the appropriate diode for each task and energy range.

1950-nm diode laser-assisted microanastomoses (LAMA): an innovative surgical tool for hand surgery emergencies.

PubMed

Leclère, Franck Marie; Schoofs, Michel; Vogt, Peter; Casoli, Vincent; Mordon, Serge

2015-05-01

Based on previous observations, the 1950-nm diode laser seems to be an ideal wavelength for laser microvascular anastomoses. The data presented here, part of a larger ongoing study, assess its use in emergency hand surgery. Between 2011 and 2014, 11 patients were operated on for hand trauma with laser-assisted microanastomoses (LAMA) and prospectively analysed. LAMA was performed with a 1950-nm diode laser after placement of equidistant stitches. For vessel size <1.5 mm, the following laser parameters were used: spot size 400 μm, five spots for each wall, power 125 mW, and arterial/venous fluence 100/90 J/cm(2) (spot duration 1/0.9 s). Mean operating time for arterial and venous microanastomoses was 7.3 ± 1.4 and 8.7 ± 1.0 min, respectively. Three anastomoses required a secondary laser application. Arterial and venous patency rates were 100 % at the time of surgery. The success rate for the 11 procedures assessed clinically and with the Doppler was 100 %. The technique is compared to the current literature. The 1950-nm LAMA is a reliable tool with excellent results in emergency hand surgery. The system is very compact and transportable for utilization in the emergency operating room.

Self-Aligned van der Waals Heterojunction Diodes and Transistors.

PubMed

Sangwan, Vinod K; Beck, Megan E; Henning, Alex; Luo, Jiajia; Bergeron, Hadallia; Kang, Junmo; Balla, Itamar; Inbar, Hadass; Lauhon, Lincoln J; Hersam, Mark C

2018-02-14

A general self-aligned fabrication scheme is reported here for a diverse class of electronic devices based on van der Waals materials and heterojunctions. In particular, self-alignment enables the fabrication of source-gated transistors in monolayer MoS 2 with near-ideal current saturation characteristics and channel lengths down to 135 nm. Furthermore, self-alignment of van der Waals p-n heterojunction diodes achieves complete electrostatic control of both the p-type and n-type constituent semiconductors in a dual-gated geometry, resulting in gate-tunable mean and variance of antiambipolar Gaussian characteristics. Through finite-element device simulations, the operating principles of source-gated transistors and dual-gated antiambipolar devices are elucidated, thus providing design rules for additional devices that employ self-aligned geometries. For example, the versatility of this scheme is demonstrated via contact-doped MoS 2 homojunction diodes and mixed-dimensional heterojunctions based on organic semiconductors. The scalability of this approach is also shown by fabricating self-aligned short-channel transistors with subdiffraction channel lengths in the range of 150-800 nm using photolithography on large-area MoS 2 films grown by chemical vapor deposition. Overall, this self-aligned fabrication method represents an important step toward the scalable integration of van der Waals heterojunction devices into more sophisticated circuits and systems.

Experimental investigation of factors limiting slow axis beam quality in 9xx nm high power broad area diode lasers

NASA Astrophysics Data System (ADS)

Winterfeldt, M.; Crump, P.; Wenzel, H.; Erbert, G.; Tränkle, G.

2014-08-01

GaAs-based broad-area diode lasers are needed with improved lateral beam parameter product (BPPlat) at high power. An experimental study of the factors limiting BPPlat is therefore presented, using extreme double-asymmetric (EDAS) vertical structures emitting at 910 nm. Continuous wave, pulsed and polarization-resolved measurements are presented and compared to thermal simulation. The importance of thermal and packaging-induced effects is determined by comparing junction -up and -down devices. Process factors are clarified by comparing diodes with and without index-guiding trenches. We show that in all cases studied, BPPlat is limited by a non-thermal BPP ground-level and a thermal BPP, which depends linearly on self-heating. Measurements as a function of pulse width confirm that self-heating rather than bias-level dominates. Diodes without trenches show low BPP ground-level, and a thermal BPP which depends strongly on mounting, due to changes in the temperature profile. The additional lateral guiding in diodes with trenches strongly increases the BPP ground-level, but optically isolates the stripe from the device edges, suppressing the influence of the thermal profile, leading to a BPP-slope that is low and independent of mounting. Trenches are also shown to initiate strain fields that cause parasitic TM-polarized emission with large BPPlat, whose influence on total BPPlat remains small, provided the overall polarization purity is >95%.

Combatant Eye Protection: An Introduction to the Blue Light Hazard

DTIC Science & Technology

2015-12-01

visible solar radiation (i.e., blue light ), as well as from light - emitting diode (LED)-generated radiant energy remains a questionable factor under...Garcia, M., Picaud, S., Attia D. 2011. Light - emitting diodes (LED) for domestic lighting : Any risks for the eye?. Progress in retinal and eye research...C., Sliney, D. H., Rollag, M., D., Hanifin, J. P., and Brainard, G. C. 2011. Blue light from light - emitting diodes elicits a dose-dependent

Polymer-metal hybrid transparent electrodes for flexible electronics

NASA Astrophysics Data System (ADS)

Kang, Hongkyu; Jung, Suhyun; Jeong, Soyeong; Kim, Geunjin; Lee, Kwanghee

2015-03-01

Despite nearly two decades of research, the absence of ideal flexible and transparent electrodes has been the largest obstacle in realizing flexible and printable electronics for future technologies. Here we report the fabrication of ‘polymer-metal hybrid electrodes’ with high-performance properties, including a bending radius <1 mm, a visible-range transmittance>95% and a sheet resistance <10 Ω sq-1. These features arise from a surface modification of the plastic substrates using an amine-containing nonconjugated polyelectrolyte, which provides ideal metal-nucleation sites with a surface-density on the atomic scale, in combination with the successive deposition of a facile anti-reflective coating using a conducting polymer. The hybrid electrodes are fully functional as universal electrodes for high-end flexible electronic applications, such as polymer solar cells that exhibit a high power conversion efficiency of 10% and polymer light-emitting diodes that can outperform those based on transparent conducting oxides.

Polymer-metal hybrid transparent electrodes for flexible electronics

PubMed Central

Kang, Hongkyu; Jung, Suhyun; Jeong, Soyeong; Kim, Geunjin; Lee, Kwanghee

2015-01-01

Despite nearly two decades of research, the absence of ideal flexible and transparent electrodes has been the largest obstacle in realizing flexible and printable electronics for future technologies. Here we report the fabrication of ‘polymer-metal hybrid electrodes’ with high-performance properties, including a bending radius <1 mm, a visible-range transmittance>95% and a sheet resistance <10 Ω sq−1. These features arise from a surface modification of the plastic substrates using an amine-containing nonconjugated polyelectrolyte, which provides ideal metal-nucleation sites with a surface-density on the atomic scale, in combination with the successive deposition of a facile anti-reflective coating using a conducting polymer. The hybrid electrodes are fully functional as universal electrodes for high-end flexible electronic applications, such as polymer solar cells that exhibit a high power conversion efficiency of 10% and polymer light-emitting diodes that can outperform those based on transparent conducting oxides. PMID:25790133

Effect of nickel diffusion and oxygen behavior on heterojunction Schottky diodes of Au/NiO/ZnO with a NiO interlayer prepared by radio-frequency magnetron sputtering.

PubMed

Hwang, Jun-Dar; Chen, Hsin-Yu; Chen, Yu-Hung; Ho, Ting-Hsiu

2018-05-03

The rectifying characteristic of Au/ZnO Schottky diodes (SDs) was remarkably improved by introducing a NiO layer in-between the Au and ZnO layers. Compared with the Au/ZnO SDs, the introduction of the NiO layer significantly enhanced the rectification ratio from 1.38 to 1,300, and reduced the ideality factor from 5.78 to 2.14. The NiO and ZnO layers were deposited on an indium-tin-oxide/glass substrate by radio-frequency magnetron sputtering. Secondary ion mass spectroscopy showed that Ni atoms diffused from NiO to ZnO, leading to a graded distribution of Ni in ZnO. X-ray diffraction demonstrated that the diffusion of Ni atoms increased the grain size and electron concentration of ZnO. X-ray photoelectron spectroscopy showed that the interstitial oxygen (Oi) atoms in NiO and ZnO compensated the oxygen vacancies (OV) at the NiO/ZnO interface; the amount of OV was significantly reduced, while Oi vanished at the interface. The band diagram revealed a potential drop in the bulk ZnO, owing to the graded distribution of Ni in ZnO, which accelerated the carriers, collected by the outer circuit. The carriers at the NiO/ZnO interface easily crossed over the barrier height, instead of being recombined by OV, owing to the lower amount of OV at the interface. © 2018 IOP Publishing Ltd.

Light-extraction enhancement for light-emitting diodes: a firefly-inspired structure refined by the genetic algorithm

NASA Astrophysics Data System (ADS)

Bay, Annick; Mayer, Alexandre

2014-09-01

The efficiency of light-emitting diodes (LED) has increased significantly over the past few years, but the overall efficiency is still limited by total internal reflections due to the high dielectric-constant contrast between the incident and emergent media. The bioluminescent organ of fireflies gave incentive for light-extraction enhance-ment studies. A specific factory-roof shaped structure was shown, by means of light-propagation simulations and measurements, to enhance light extraction significantly. In order to achieve a similar effect for light-emitting diodes, the structure needs to be adapted to the specific set-up of LEDs. In this context simulations were carried out to determine the best geometrical parameters. In the present work, the search for a geometry that maximizes the extraction of light has been conducted by using a genetic algorithm. The idealized structure considered previously was generalized to a broader variety of shapes. The genetic algorithm makes it possible to search simultaneously over a wider range of parameters. It is also significantly less time-consuming than the previous approach that was based on a systematic scan on parameters. The results of the genetic algorithm show that (1) the calculations can be performed in a smaller amount of time and (2) the light extraction can be enhanced even more significantly by using optimal parameters determined by the genetic algorithm for the generalized structure. The combination of the genetic algorithm with the Rigorous Coupled Waves Analysis method constitutes a strong simulation tool, which provides us with adapted designs for enhancing light extraction from light-emitting diodes.

Thermoelectric Devices Cool, Power Electronics

NASA Technical Reports Server (NTRS)

2009-01-01

Nextreme Thermal Solutions Inc., based in Research Triangle Park, North Carolina, licensed thermoelectric technology from NASA s Jet Propulsion Laboratory. This has allowed the company to develop cutting edge, thin-film thermoelectric coolers that effective remove heat generated by increasingly powerful and tightly packed microchip components. These solid-state coolers are ideal solutions for applications like microprocessors, laser diodes, LEDs, and even potentially for cooling the human body. Nextreme s NASA technology has also enabled the invention of thermoelectric generators capable of powering technologies like medical implants and wireless sensor networks.

Metal oxide induced charge transfer doping and band alignment of graphene electrodes for efficient organic light emitting diodes.

PubMed

Meyer, Jens; Kidambi, Piran R; Bayer, Bernhard C; Weijtens, Christ; Kuhn, Anton; Centeno, Alba; Pesquera, Amaia; Zurutuza, Amaia; Robertson, John; Hofmann, Stephan

2014-06-20

The interface structure of graphene with thermally evaporated metal oxide layers, in particular molybdenum trioxide (MoO3), is studied combining photoemission spectroscopy, sheet resistance measurements and organic light emitting diode (OLED) characterization. Thin (<5 nm) MoO3 layers give rise to an 1.9 eV large interface dipole and a downwards bending of the MoO3 conduction band towards the Fermi level of graphene, leading to a near ideal alignment of the transport levels. The surface charge transfer manifests itself also as strong and stable p-type doping of the graphene layers, with the Fermi level downshifted by 0.25 eV and sheet resistance values consistently below 50 Ω/sq for few-layer graphene films. The combination of stable doping and highly efficient charge extraction/injection allows the demonstration of simplified graphene-based OLED device stacks with efficiencies exceeding those of standard ITO reference devices.

Single-crystal phosphors for high-brightness white LEDs/LDs

NASA Astrophysics Data System (ADS)

Víllora, Encarnación G.; Arjoca, Stelian; Inomata, Daisuke; Shimamura, Kiyoshi

2016-03-01

White light-emitting diodes (wLEDs) are the new environmental friendly sources for general lighting purposes. For applications requiring a high-brightness, current wLEDs present overheating problems, which drastically decrease their emission efficiency, color quality and lifetime. This work gives an overview of the recent investigations on single-crystal phosphors (SCPs), which are proposed as novel alternative to conventional ceramic powder phosphors (CPPs). This totally new approach takes advantage of the superior properties of single-crystals in comparison with ceramic materials. SCPs exhibit an outstanding conversion efficiency and thermal stability up to 300°C. Furthermore, compared with encapsulated CPPs, SCPs possess a superior thermal conductivity, so that generated heat can be released efficiently. The conjunction of all these characteristics results in a low temperature rise of SCPs even under high blue irradiances, where conventional CPPs are overheated or even burned. Therefore, SCPs represent the ideal, long-demanded all-inorganic phosphors for high-brightness white light sources, especially those involving the use of high-density laser-diode beams.

Clinical system for non-invasive in situ monitoring of gases in the human paranasal sinuses.

PubMed

Lewander, Märta; Guan, Zuguang; Svanberg, Katarina; Svanberg, Sune; Svensson, Tomas

2009-06-22

We present a portable system for non-invasive, simultaneous sensing of molecular oxygen (O(2)) and water vapor (H(2)O) in the human paranasal cavities. The system is based on high-resolution tunable diode laser spectroscopy (TDLAS) and digital wavelength modulation spectroscopy (dWMS). Since optical interference and non-ideal tuning of the diode lasers render signal processing complex, we focus on Fourier analysis of dWMS signals and procedures for removal of background signals. Clinical data are presented, and exhibit a significant improvement in signal-to-noise with respect to earlier work. The in situ detection limit, in terms of absorption fraction, is about 5x10(-5) for oxygen and 5x10(-4) for water vapor, but varies between patients due to differences in light attenuation. In addition, we discuss the use of water vapor as a reference in quantification of in situ oxygen concentration in detail. In particular, light propagation aspects are investigated by employing photon time-of-flight spectroscopy.

Modeling of light-emitting diode wavefronts for the optimization of transmission holograms.

PubMed

Karthaus, Daniela; Giehl, Markus; Sandfuchs, Oliver; Sinzinger, Stefan

2017-06-20

The objective of applying transmission holograms in automotive headlamp systems requires the adaptation of holograms to divergent and polychromatic light sources like light-emitting diodes (LEDs). In this paper, four different options to describe the scalar light waves emitted by a typical automotive LED are regarded. This includes a new approach to determine the LED's wavefront from interferometric measurements. Computer-generated holograms are designed considering the different LED approximations and recorded into a photopolymer. The holograms are reconstructed with the LED and the resulting images are analyzed to evaluate the quality of the wave descriptions. In this paper, we show that our presented new approach leads to better results in comparison to other wave descriptions. The enhancement is evaluated by the correlation between reconstructed and ideal images. In contrast to the next best approximation, a spherical wave, the correlation coefficient increased by 0.18% at 532 nm, 1.69% at 590 nm, and 0.75% at 620 nm.

Fabrication of n-ZnO:Al/p-Si(100) heterojunction diode and its characterization

NASA Astrophysics Data System (ADS)

Parvathy Venu, M.; Dharmaprakash, S. M.; Byrappa, K.

2018-04-01

Aluminum doped ZnO (n-ZnO:Al) nanostructured thin films were grown on ZnO seed layer coated p-Si(100) substrate employing hydrothermal technique. X-ray diffraction pattern revealed that the ZnO:Al film possess hexagonal wurtzite structure with preferential orientation along (002) direction. Photoluminescence of the sample displayed near band edge emission peak in the ultra-violet region and defect level emission peak in the visible region. The as grown thin film was used in the fabrication of n-ZnO:Al/p-Si heterojunction diode and the room temperature current-voltage (I-V) and capacitance-voltage (C-V) characteristics were studied. The heterojunction exhibited fairly good rectification with an ideality of 2.49 and reverse saturation current of 2 nA. The barrier height was found to be 0.668 eV from the I-V measurements. The C-V measurements showed a decrease in the capacitance of the heterojunction with an increase in the reverse bias voltage.

Surface cleaning techniques and efficient B-field profiles for lithium ion sources on extraction ion diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cuneo, M.E.; Menge, P.R.; Hanson, D.L.

Application of ion beams to Inertial Confinement Fusion requires efficient production, transport and focusing of an intense, low microdivergence beam of an appropriate range ion. At Sandia, the authors are studying the production of lithium ion beams in extraction applied-B ion diodes on the SABRE accelerator (5 MV, 250 kA). Evidence on both SABRE (1 TW) and PBFA-II (20 TW) indicates that the lithium beam turns off and is replaced by a beam of mostly protons and carbon, possibly due to electron thermal and stimulated desorption of hydrocarbon surface contamination with subsequent avalanche ionization. Turn-off of the lithium beam ismore » accompanied by rapid impedance collapse. Surface cleaning techniques are being developed to reduce beam contamination, increase the total lithium energy and reduce the rate of diode impedance collapse. Application of surface cleaning techniques has increased the production of lithium from passive LiF sources by a factor of 2. Improved diode electric and magnetic field profiles have increased the diode efficiency and production of lithium by a factor of 5, without surface cleaning. Work is ongoing to combine these two advances which are discussed here.« less

Dry etching, surface passivation and capping processes for antimonide based photodetectors

NASA Astrophysics Data System (ADS)

Dutta, Partha; Langer, Jeffery; Bhagwat, Vinay; Juneja, Jasbir

2005-05-01

III-V antimonide based devices suffer from leakage currents. Surface passivation and subsequent capping of the surfaces are absolutely essential for any practical applicability of antimonide based devices. The quest for a suitable surface passivation technology is still on. In this paper, we will present some of the promising recent developments in this area based on dry etching of GaSb based homojunction photodiodes structures followed by various passivation and capping schemes. We have developed a damage-free, universal dry etching recipe based on unique ratios of Cl2/BCl3/CH4/Ar/H2 in ECR plasma. This novel dry plasma process etches all III-V compounds at different rates with minimal damage to the side walls. In GaSb based photodiodes, an order of magnitude lower leakage current, improved ideality factor and higher responsivity has been demonstrated using this recipe compared to widely used Cl2/Ar and wet chemical etch recipes. The dynamic zero bias resistance-area product of the Cl2/BCl3/CH4/Ar/H2 etched diodes (830 Ω cm2) is higher than the Cl2/Ar (300 Ω cm2) and wet etched (330 Ω cm2) diodes. Ammonium sulfide has been known to passivate surfaces of III-V compounds. In GaSb photodiodes, the leakage current density reduces by a factor of 3 upon sulfur passivation using ammonium sulfide. However, device performance degrades over a period of time in the absence of any capping or protective layer. Silicon Nitride has been used as a cap layer by various researchers. We have found that by using silicon nitride caps, the devices exhibit higher leakage than unpassivated devices probably due to plasma damage during SiNx deposition. We have experimented with various polymers for capping material. It has been observed that ammonium sulfide passivation when combined with parylene capping layer (150 Å), devices retain their improved performance for over 4 months.

An analysis of the ArcCHECK-MR diode array's performance for ViewRay quality assurance.

PubMed

Ellefson, Steven T; Culberson, Wesley S; Bednarz, Bryan P; DeWerd, Larry A; Bayouth, John E

2017-07-01

The ArcCHECK-MR diode array utilizes a correction system with a virtual inclinometer to correct the angular response dependencies of the diodes. However, this correction system cannot be applied to measurements on the ViewRay MR-IGRT system due to the virtual inclinometer's incompatibility with the ViewRay's multiple simultaneous beams. Additionally, the ArcCHECK's current correction factors were determined without magnetic field effects taken into account. In the course of performing ViewRay IMRT quality assurance with the ArcCHECK, measurements were observed to be consistently higher than the ViewRay TPS predictions. The goals of this study were to quantify the observed discrepancies and test whether applying the current factors improves the ArcCHECK's accuracy for measurements on the ViewRay. Gamma and frequency analysis were performed on 19 ViewRay patient plans. Ion chamber measurements were performed at a subset of diode locations using a PMMA phantom with the same dimensions as the ArcCHECK. A new method for applying directionally dependent factors utilizing beam information from the ViewRay TPS was developed in order to analyze the current ArcCHECK correction factors. To test the current factors, nine ViewRay plans were altered to be delivered with only a single simultaneous beam and were measured with the ArcCHECK. The current correction factors were applied using both the new and current methods. The new method was also used to apply corrections to the original 19 ViewRay plans. It was found the ArcCHECK systematically reports doses higher than those actually delivered by the ViewRay. Application of the current correction factors by either method did not consistently improve measurement accuracy. As dose deposition and diode response have both been shown to change under the influence of a magnetic field, it can be concluded the current ArcCHECK correction factors are invalid and/or inadequate to correct measurements on the ViewRay system. © 2017 The Authors. Journal of Applied Clinical Medical Physics published by Wiley Periodicals, Inc. on behalf of American Association of Physicists in Medicine.

M-I-S solar cell - Theory and experimental results

NASA Technical Reports Server (NTRS)

Childs, R.; Fortuna, J.; Geneczko, J.; Fonash, S. J.

1976-01-01

The paper presents an operating-mode analysis of an MIS solar cell and discusses the advantages which can arise as a result of the use of transport control, field shaping (increased n factor), and zero bias barrier height modification. It is noted that for an n-type semiconductor, it is relatively easy to obtain an enhanced n factor using acceptor-like states without an increase in diode saturation current, the converse being true for p-type semiconductors. Several MIS configurations are examined: an acceptor-like, localized state configuration producing field shaping and no change in diode saturation current, and acceptor-like localized configurations producing field shaping, with a decrease of diode saturation current, in one case, and an increase in the other.

Volume Bragg grating improves characteristic of resonantly diode-pumped Er:YAG, 1.65-μm DPSSL

NASA Astrophysics Data System (ADS)

Kudryashov, Igor; Garbuzov, Dmitri; Dubinskii, Mark

2007-02-01

Significant performance improvement of the Er(0.5%):YAG diode pumped solid state laser (DPSSL) has been achieved by pump diode spectral narrowing via implementation of external volumetric Bragg grating (VBG). Without spectral narrowing, with a pump path length of 15 mm, only 37% of 1532 nm pump was absorbed. After the VBG spectral narrowing, the absorption of the pumping radiation increased to 62%. As a result, the incident power threshold was reduced by a factor of 2.5; the efficiency increased by a factor of 1.7, resulting in a slope efficiency of ~23%. A maximum of 51 W of CW power was obtained versus 31 W without the pump spectrum narrowing.

Influence of the anisotropy on the performance of D-band SiC IMPATT diodes

NASA Astrophysics Data System (ADS)

Chen, Qing; Yang, Lin'an; Wang, Shulong; Zhang, Yue; Dai, Yang; Hao, Yue

2015-03-01

Numerical simulation has been made to predict the RF performance of <0001> direction and <> direction p+/n/n-/n+ (single drift region) 4H silicon carbide (4H-SiC) impact-ionization-avalanche-transit-time (IMPATT) diodes for operation at D-band frequencies. We observed that the output performance of 4H-SiC IMPATT diode is sensitive to the crystal direction of the one-dimensional current flow. The simulation results show that <0001> direction 4H-SiC IMPATT diode provides larger breakdown voltage for its lower electron and hole ionization rates and higher dc-to-rf conversion efficiency (η) for its higher ratio of drift zone voltage drop (VD) to breakdown voltage (VB) compared with those for <> direction 4H-SiC IMPATT diode, which lead to higher-millimeter-wave power output for <0001> direction 4H-SiC IMPATT compared to <> direction. However, the quality factor Q for the <> direction 4H-SiC IMPATT diode is lower than that of <0001> direction, which implies that the <> direction 4H-SiC IMPATT diode exhibits better stability and higher growth rate of microwave oscillation compared with <0001> direction 4H-SiC IMPATT diode.

Deriving detector-specific correction factors for rectangular small fields using a scintillator detector.

PubMed

Qin, Yujiao; Zhong, Hualiang; Wen, Ning; Snyder, Karen; Huang, Yimei; Chetty, Indrin J

2016-11-08

The goal of this study was to investigate small field output factors (OFs) for flat-tening filter-free (FFF) beams on a dedicated stereotactic linear accelerator-based system. From this data, the collimator exchange effect was quantified, and detector-specific correction factors were generated. Output factors for 16 jaw-collimated small fields (from 0.5 to 2 cm) were measured using five different detectors including an ion chamber (CC01), a stereotactic field diode (SFD), a diode detector (Edge), Gafchromic film (EBT3), and a plastic scintillator detector (PSD, W1). Chamber, diodes, and PSD measurements were performed in a Wellhofer water tank, while films were irradiated in solid water at 100 cm source-to-surface distance and 10 cm depth. The collimator exchange effect was quantified for rectangular fields. Monte Carlo (MC) simulations of the measured configurations were also performed using the EGSnrc/DOSXYZnrc code. Output factors measured by the PSD and verified against film and MC calculations were chosen as the benchmark measurements. Compared with plastic scintillator detector (PSD), the small volume ion chamber (CC01) underestimated output factors by an average of -1.0% ± 4.9% (max. = -11.7% for 0.5 × 0.5 cm2 square field). The stereotactic diode (SFD) overestimated output factors by 2.5% ± 0.4% (max. = 3.3% for 0.5 × 1 cm2 rectangular field). The other diode detector (Edge) also overestimated the OFs by an average of 4.2% ± 0.9% (max. = 6.0% for 1 × 1 cm2 square field). Gafchromic film (EBT3) measure-ments and MC calculations agreed with the scintillator detector measurements within 0.6% ± 1.8% and 1.2% ± 1.5%, respectively. Across all the X and Y jaw combinations, the average collimator exchange effect was computed: 1.4% ± 1.1% (CC01), 5.8% ± 5.4% (SFD), 5.1% ± 4.8% (Edge diode), 3.5% ± 5.0% (Monte Carlo), 3.8% ± 4.7% (film), and 5.5% ± 5.1% (PSD). Small field detectors should be used with caution with a clear understanding of their behaviors, especially for FFF beams and small, elongated fields. The scintillator detector exhibited good agreement against Gafchromic film measurements and MC simulations over the range of field sizes studied. The collimator exchange effect was found to be impor-tant at these small field sizes. Detector-specific correction factors were computed using the scintillator measurements as the benchmark. © 2016 The Authors.

Cardiovascular health in Brazilian state capitals 1.

PubMed

Matozinhos, Fernanda Penido; Felisbino-Mendes, Mariana Santos; Gomes, Crizian Saar; Jansen, Ann Kristine; Machado, Ísis Eloah; Lana, Francisco Carlos Félix; Malta, Deborah Carvalho; Velaquez-Melendez, Gustavo

2017-10-19

to estimate the prevalence of ideal cardiovascular health indicators in the Brazilian population, according to gender, age, education and region of residence. cross-sectional study that used data from 41,134 participants of the Surveillance System of Risk and Protective Factors for Chronic Diseases by Telephone Survey (Vigitel). The ideal cardiovascular health assessment considers four behavioral factors: not smoking; body mass index less than 25 kg/m2; practicing physical activity, eating fruits and vegetables five or more times per day; and two clinical factors (no diagnosis of diabetes or hypertension). The sum of factors at ideal levels results in a score ranging from zero (worse cardiovascular health) to six (ideal cardiovascular health). considering the six factors, only 3.4% of the studied population presented ideal levels of cardiovascular health, with the majority of participants (57.6%) presenting three or four ideal factors. Women had higher prevalence of ideal cardiovascular health (3.8% versus 2.9% for men) (p < 0.0001). the findings of this study are consistent with the elevated risk of mortality from cardiovascular disease, observed in the Brazilian population. This may contribute to a better understanding of the scenario of cardiovascular health in the urban population of the country.

A quasioptically stabilized resonant-tunneling-diode oscillator for the millimeter- and submillimeter-wave regions

NASA Technical Reports Server (NTRS)

Brown, Elliott R.; Parker, Christopher D.; Molvar, Karen M.; Stephan, Karl D.

1992-01-01

A semiconfocal open-cavity resonator has been used to stabilize a resonant-tunneling-diode waveguide oscillator at frequencies near 100 GHz. The high quality factor of the open cavity resulted in a linewidth of approximately 10 kHz at 10 dB below the peak, which is about 100 times narrower than the linewidth of an unstabilized waveguide oscillator. This technique is well suited for resonant-tunneling-diode oscillators in the submillimeter-wave region.

Effects of nuclear radiation on a high-reliability silicon power diode. 4: Analysis of reverse bias characteristics

NASA Technical Reports Server (NTRS)

Been, J. F.

1973-01-01

The effects of nuclear radiation on the reverse bias electrical characteristics of one hundred silicon power diodes were investigated. On a percentage basis, the changes in reverse currents were large but, due to very low initial values, this electrical characteristic was not the limiting factor in use of these diodes. These changes were interpreted in terms of decreasing minority carrier lifetimes as related to generation-recombination currents. The magnitudes of reverse voltage breakdown were unaffected by irradiation.

2.1 μm high-power laser diode beam combining(Conference Presentation)

NASA Astrophysics Data System (ADS)

Berrou, Antoine P. C.; Elder, Ian F.; Lamb, Robert A.; Esser, M. J. Daniel

2016-10-01

Laser power and brightness scaling, in "eye safe" atmospheric transmission windows, is driving laser system research and development. High power lasers with good beam quality, at wavelength around 2.1 µm, are necessary for optical countermeasure applications. For such applications, focusing on efficiency and compactness of the system is mandatory. In order to cope with these requirements, one must consider the use of laser diodes which emit directly in the desired spectral region. The challenge for these diodes is to maintain a good beam quality factor as the output power increases. 2 µm diodes with excellent beam quality in both axes are available with output powers of 100 mW. Therefore, in order to reach multi-watt of average output power, broad-area single emitters and beam combining becomes relevant. Different solutions have been implemented in the 1.9 to 2 µm wavelength range, one of which is to stack multiple emitter bars reaching more than one hundred watt, while another is a fibre coupled diode module. The beam propagation factor of these systems is too high for long atmospheric propagation applications. Here we describe preliminary results on non-coherent beam combining of 2.1 µm high power Fabry-Perot GaSb laser diodes supplied by Brolis Semiconductors Ltd. First we evaluated single mode diodes (143 mW) with good beam quality (M2 < 1.5 for slow axis and < 1.1 for fast axis). Then we characterized broad-area single emitter diodes (808 mW) with an electrical-to-optical efficiency of 19 %. The emitter width was 90 µm with a cavity length of 1.5 mm. In our experiments we found that the slow axis multimode output beam consisted of two symmetric lobes with a total full width at half maximum (FWHM) divergence angle of 25 degrees, corresponding to a calculated beam quality factor of M2 = 25. The fast axis divergence was specified to be 44 degrees, with an expected beam quality factor close to the diffraction limit, which informed our selection of collimation lenses used in the experiment. We evaluated two broadband (1.8 - 3 µm) AR coated Geltech aspheric lenses with focal lengths of 1.87 mm and 4 mm, with numerical apertures of 0.85 and 0.56, respectively, as an initial collimation lens, followed by an additional cylindrical lens of focal length 100 mm for fully collimating the slow axis. Using D-shaped gold-coated mirrors, multiple single emitter beams are stacked in the fast axis direction with the objective that the combined beam has a beam propagation factor in the stacking direction close to the beam propagation factor of the slow axis of a single emitter, e.g. M2 of 20 to 25 in both axes. We further found that the output beam of a single emitter is highly linearly polarized along the slow axis, making it feasible to implement polarization beam combining techniques to increase the beam power by a factor two while maintaining the same beam quality. Along with full beam characterization, a power scaling strategy towards a multi-watt output power beam combining laser system will be presented.

A solar photovoltaic system with ideal efficiency close to the theoretical limit.

PubMed

Zhao, Yuan; Sheng, Ming-Yu; Zhou, Wei-Xi; Shen, Yan; Hu, Er-Tao; Chen, Jian-Bo; Xu, Min; Zheng, Yu-Xiang; Lee, Young-Pak; Lynch, David W; Chen, Liang-Yao

2012-01-02

In order to overcome some physical limits, a solar system consisting of five single-junction photocells with four optical filters is studied. The four filters divide the solar spectrum into five spectral regions. Each single-junction photocell with the highest photovoltaic efficiency in a narrower spectral region is chosen to optimally fit into the bandwidth of that spectral region. Under the condition of solar radiation ranging from 2.4 SUN to 3.8 SUN (AM1.5G), the measured peak efficiency under 2.8 SUN radiation reaches about 35.6%, corresponding to an ideal efficiency of about 42.7%, achieved for the photocell system with a perfect diode structure. Based on the detailed-balance model, the calculated theoretical efficiency limit for the system consisting of 5 single-junction photocells can be about 52.9% under 2.8 SUN (AM1.5G) radiation, implying that the ratio of the highest photovoltaic conversion efficiency for the ideal photodiode structure to the theoretical efficiency limit can reach about 80.7%. The results of this work will provide a way to further enhance the photovoltaic conversion efficiency for solar cell systems in future applications.

Robust adhesive precision bonding in automated assembly cells

NASA Astrophysics Data System (ADS)

Müller, Tobias; Haag, Sebastian; Bastuck, Thomas; Gisler, Thomas; Moser, Hansruedi; Uusimaa, Petteri; Axt, Christoph; Brecher, Christian

2014-03-01

Diode lasers are gaining importance, making their way to higher output powers along with improved BPP. The assembly of micro-optics for diode laser systems goes along with the highest requirements regarding assembly precision. Assembly costs for micro-optics are driven by the requirements regarding alignment in a submicron and the corresponding challenges induced by adhesive bonding. For micro-optic assembly tasks a major challenge in adhesive bonding at highest precision level is the fact, that the bonding process is irreversible. Accordingly, the first bonding attempt needs to be successful. Today's UV-curing adhesives inherit shrinkage effects crucial for submicron tolerances of e.g. FACs. The impact of the shrinkage effects can be tackled by a suitable bonding area design, such as minimal adhesive gaps and an adapted shrinkage offset value for the specific assembly parameters. Compensating shrinkage effects is difficult, as the shrinkage of UV-curing adhesives is not constant between two different lots and varies even over the storage period even under ideal circumstances as first test results indicate. An up-to-date characterization of the adhesive appears necessary for maximum precision in optics assembly to reach highest output yields, minimal tolerances and ideal beamshaping results. Therefore, a measurement setup to precisely determine the up-to-date level of shrinkage has been setup. The goal is to provide necessary information on current shrinkage to the operator or assembly cell to adjust the compensation offset on a daily basis. Impacts of this information are expected to be an improved beam shaping result and a first-time-right production.

Hsp70 and ceramide release by diode laser-treated mouse skin cells in vivo

NASA Astrophysics Data System (ADS)

Sokolovskii, G. S.; Onikienko, S. B.; Zemlyanoi, A. V.; Soboleva, K. K.; Pikhtin, N. A.; Tarasov, I. S.; Guzova, I. V.; Margulis, B. A.

2014-12-01

We report experimental study of generation of extracellular heat shock proteins (Hsp70) and ceramides under pulsed irradiation by quantum-well laser diodes. Our results are of great promise for applications in practical medicine such as protection against biopathogenes and abiotic stress factor challenges.

Design and experimental testing of air slab caps which convert commercial electron diodes into dual purpose, correction-free diodes for small field dosimetry

DOE Office of Scientific and Technical Information (OSTI.GOV)

Charles, P. H., E-mail: paulcharles111@gmail.com; Cranmer-Sargison, G.; Thwaites, D. I.

2014-10-15

Purpose: Two diodes which do not require correction factors for small field relative output measurements are designed and validated using experimental methodology. This was achieved by adding an air layer above the active volume of the diode detectors, which canceled out the increase in response of the diodes in small fields relative to standard field sizes. Methods: Due to the increased density of silicon and other components within a diode, additional electrons are created. In very small fields, a very small air gap acts as an effective filter of electrons with a high angle of incidence. The aim was tomore » design a diode that balanced these perturbations to give a response similar to a water-only geometry. Three thicknesses of air were placed at the proximal end of a PTW 60017 electron diode (PTWe) using an adjustable “air cap”. A set of output ratios (OR{sub Det}{sup f{sub c}{sub l}{sub i}{sub n}}) for square field sizes of side length down to 5 mm was measured using each air thickness and compared to OR{sub Det}{sup f{sub c}{sub l}{sub i}{sub n}} measured using an IBA stereotactic field diode (SFD). k{sub Q{sub c{sub l{sub i{sub n,Q{sub m{sub s{sub r}{sup f{sub c}{sub l}{sub i}{sub n},f{sub m}{sub s}{sub r}}}}}}}}} was transferred from the SFD to the PTWe diode and plotted as a function of air gap thickness for each field size. This enabled the optimal air gap thickness to be obtained by observing which thickness of air was required such that k{sub Q{sub c{sub l{sub i{sub n,Q{sub m{sub s{sub r}{sup f{sub c}{sub l}{sub i}{sub n},f{sub m}{sub s}{sub r}}}}}}}}} was equal to 1.00 at all field sizes. A similar procedure was used to find the optimal air thickness required to make a modified Sun Nuclear EDGE detector (EDGEe) which is “correction-free” in small field relative dosimetry. In addition, the feasibility of experimentally transferring k{sub Q{sub c{sub l{sub i{sub n,Q{sub m{sub s{sub r}{sup f{sub c}{sub l}{sub i}{sub n},f{sub m}{sub s}{sub r}}}}}}}}} values from the SFD to unknown diodes was tested by comparing the experimentally transferred k{sub Q{sub c{sub l{sub i{sub n,Q{sub m{sub s{sub r}{sup f{sub c}{sub l}{sub i}{sub n},f{sub m}{sub s}{sub r}}}}}}}}} values for unmodified PTWe and EDGEe diodes to Monte Carlo simulated values. Results: 1.0 mm of air was required to make the PTWe diode correction-free. This modified diode (PTWe{sub air}) produced output factors equivalent to those in water at all field sizes (5–50 mm). The optimal air thickness required for the EDGEe diode was found to be 0.6 mm. The modified diode (EDGEe{sub air}) produced output factors equivalent to those in water, except at field sizes of 8 and 10 mm where it measured approximately 2% greater than the relative dose to water. The experimentally calculated k{sub Q{sub c{sub l{sub i{sub n,Q{sub m{sub s{sub r}{sup f{sub c}{sub l}{sub i}{sub n},f{sub m}{sub s}{sub r}}}}}}}}} for both the PTWe and the EDGEe diodes (without air) matched Monte Carlo simulated results, thus proving that it is feasible to transfer k{sub Q{sub c{sub l{sub i{sub n,Q{sub m{sub s{sub r}{sup f{sub c}{sub l}{sub i}{sub n},f{sub m}{sub s}{sub r}}}}}}}}} from one commercially available detector to another using experimental methods and the recommended experimental setup. Conclusions: It is possible to create a diode which does not require corrections for small field output factor measurements. This has been performed and verified experimentally. The ability of a detector to be “correction-free” depends strongly on its design and composition. A nonwater-equivalent detector can only be “correction-free” if competing perturbations of the beam cancel out at all field sizes. This should not be confused with true water equivalency of a detector.« less

Analysis of electrical properties of heterojunction based on ZnIn2Se4

NASA Astrophysics Data System (ADS)

Attia, A. A.; Ali, H. A. M.; Salem, G. F.; Ismail, M. I.; Al-Harbi, F. F.

2017-04-01

Heterojunction of n-ZnIn2Se4/p-Si was fabricated using thermal evaporation of ZnIn2Se4 thin films of thickness 473 nm onto p-Si substrate at room temperature. The characteristics of current-voltage (I-V) for n-ZnIn2Se4/p-Si heterojunction were investigated at different temperatures ranged from 308 K to 363 K. The junction parameters namely are; rectification ratio (RR), series resistance (Rs), shunt resistance (Rsh) and diode ideality factor (n) were calculated from the analysis of I-V curves. The forward current showed two conduction mechanisms operating, which were the thermionic emission and the single trap space charge limited current in low (0 ≤ V ≤ 0.5 V) and high (V ≥ 0.7 V) ranges of voltage, respectively. The reverse current was due to the generation through Si rather than the ZnIn2Se4 film. The built-in voltage and the width of the depletion region were determined from the capacitance-voltage (C-V) measurements. The photovoltaic characteristics of the junction were also studied through the (I-V) measurements under illumination of 40 mW/cm2. The cell parameters; the short-circuit current, the open-circuit voltage and the fill factor were estimated at room temperature.

Performance of RF sputtered p-Si/n-ZnO nanoparticle thin film heterojunction diodes in high temperature environment

NASA Astrophysics Data System (ADS)

Singh, Satyendra Kumar; Hazra, Purnima

2017-04-01

In this article, temperature-dependent current-voltage characteristics of n-ZnO/p-Si nanoparticle thin film heterojunction diode grown by RF sputtering technique are analyzed in the temperature range of 300-433 k to investigate the performance of the device in high temperature environment. The microstructural, morphological, optical and temptrature dependent electrical properties of as-grown nanoparticle thin film were characterized by X-ray diffractometer (XRD), atomic force microscopy (AFM), field emmision scanning electron microscopy (FESEM), energy-dispersive X-ray spectroscopy (EDX), variable angle ellipsometer and semiconductor device analyzer. XRD spectra of as-grown ZnO films are exhibited that highly c-axis oriented ZnO nanostructures are grown on p- Si〈100〉 substrate whereas AFM and FESEM images confirm the homogeneous deposition of ZnO nanoparticles on surface of Si substratewith minimum roughness.The optical propertiesof as-grown ZnO nanoparticles have been measured in the spectral range of 300-800 nm using variable angle ellipsometer.To measure electrical parameters of the device prototype in the temperature range of room temperature (300 K) to 433 K, large area ohmic contacts were fabricated on both side of the ZnO/Si heterostructure. From the current-voltage charcteristics of ZnO/Si heterojunction device, it is observed that the device exhibits rectifing nature at room temperature. However, with increase in temperature, reverse saturation current and barrier height are found to increase, whereas ideality factor is started decreasing. This phenomenon confirms that barrier inhomogeneities are present at the interface of ZnO/Si heterojunction, as a result of lattice constant and thermal coefficient mismatch between Si and ZnO. Therefore, a modified value of Richardson constant [33.06 Acm-2K-2] has been extracted from the temperature-dependent electrical characteristics after assuming the Gaussian distribution of special barrier height inhomogeneities across the Si/ZnO interface which is close to its theoretical value [32 Acm-2K-2]. This result indicates that regardless of presence of barrier height inmogeneities, ZnO/Si heterojunction diode still hasability to perform well in high temperature environment.

Effect of interface layer on the performance of high power diode laser arrays

NASA Astrophysics Data System (ADS)

Zhang, Pu; Wang, Jingwei; Xiong, Lingling; Li, Xiaoning; Hou, Dong; Liu, Xingsheng

2015-02-01

Packaging is an important part of high power diode laser (HPLD) development and has become one of the key factors affecting the performance of high power diode lasers. In the package structure of HPLD, the interface layer of die bonding has significant effects on the thermal behavior of high power diode laser packages and most degradations and failures in high power diode laser packages are directly related to the interface layer. In this work, the effects of interface layer on the performance of high power diode laser array were studied numerically by modeling and experimentally. Firstly, numerical simulations using finite element method (FEM) were conducted to analyze the effects of voids in the interface layer on the temperature rise in active region of diode laser array. The correlation between junction temperature rise and voids was analyzed. According to the numerical simulation results, it was found that the local temperature rise of active region originated from the voids in the solder layer will lead to wavelength shift of some emitters. Secondly, the effects of solder interface layer on the spectrum properties of high power diode laser array were studied. It showed that the spectrum shape of diode laser array appeared "right shoulder" or "multi-peaks", which were related to the voids in the solder interface layer. Finally, "void-free" techniques were developed to minimize the voids in the solder interface layer and achieve high power diode lasers with better optical-electrical performances.

TU-F-BRE-08: Significant Variations in Measured Small Cone Output Factor for FFF Beams

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sudhyadhom, A; Ma, L; Kirby, N

2014-06-15

Purpose: To evaluate the measurement accuracy of several dosimeters for small cone output factors in two SRS/SBRT dedicated systems with Flattening Filter Free (FFF) beams: a Varian TrueBeam STx (TB) and an Accuray CyberKnife VSI (CK). Output factors (OFs) were measured for both machines and for CK, compared against a Monte Carlo model. Methods: Dose measurements were taken using three different FFF beams (TB 6XFFF, TB 10XFFF, and CK 6XFFF). Three commonly used types of dosimeters were examined in this work: a micro-ion chamber (Exradin A16), two shielded diodes (PTW TN60008 and PTW TN60017), and radiochromic film (Gafchromic EBT2). Measuredmore » OFs from these dosimeters were compared with each other and OFs measured with an Exradin W1 scintillator. Monte Carlo determined correction factors for the CK beam for the micro-ion chamber and diodes were applied to the respective OF measurements and compared against scintillator measured OFs corrected for volume averaging. Results: OFs measured for the smallest fields using the micro-ion chamber, diodes, scintillator, and film varied substantially (with up to a 16% difference between dosimeters). Micro-ion chamber and film OF measurements were up to 9% and 10%, respectively, lower than scintillator measurements for the smallest fields. OF measurements by diode were up to 6% greater than scintillator measurements for the smallest fields. With correction factors, the micro-ion chamber and diode measured OFs showed good agreement with scintillator measured OFs for the CK 6XFFF beam (within 3% and 1.5%, respectively). Conclusion: Uncorrected small field OFs vary significantly with dosimeter. The accuracy of scintillator measurements for small field OFs may be greater than the other dosimeters studied in this work (when uncorrected). Measurements involving EBT2 film may Result in lower accuracy for smaller fields (less than 10mm). Care should be taken in the choice of the dosimeter used for small field OF measurements.« less

Next generation DIRCM for 2.1-2.3 micron wavelength based on direct-diode GaSb technology

NASA Astrophysics Data System (ADS)

Dvinelis, Edgaras; Naujokaitė, Greta; Greibus, Mindaugas; Trinkūnas, Augustinas; Vizbaras, Kristijonas; Vizbaras, Augustinas

2018-02-01

Continuous advances in low-cost MANPAD heat-seeking missile technology over the past 50 years remains the number one hostile threat to airborne platforms globally responsible for over 60 % of casualties. Laser based directional countermeasure (DIRCM) technology have been deployed to counter the threat. Ideally, a laser based DIRCM system must involve a number of lasers emitting at different spectral bands mimicking the spectral signature of the airborne platform. Up to now, near and mid infrared spectral bands have been covered with semiconductor laser technology and only SWIR band remained with bulky fiber laser technology. Recent technology developments on direct-diode GaSb laser technology at Brolis Semiconductors offer a replacement for the fiber laser source leading to significant improvements by few orders of magnitude in weight, footprint, efficiency and cost. We demonstrate that with careful engineering, several multimode emitters can be combined to provide a directional laser beam with radiant intensity from 10 kW/sr to 60 kW/sr in an ultra-compact hermetic package with weight < 30 g and overall efficiency of 15 % in the 2.1- 2.3 micron spectral band offering 150 times improvement in efficiency and reduction in footprint. We will discuss present results, challenges and future developments for such next-generation integrated direct diode DIRCM modules for SWIR band.

Analysis of the Electrical Properties of an Electron Injection Layer in Alq3-Based Organic Light Emitting Diodes.

PubMed

Kim, Soonkon; Choi, Pyungho; Kim, Sangsub; Park, Hyoungsun; Baek, Dohyun; Kim, Sangsoo; Choi, Byoungdeog

2016-05-01

We investigated the carrier transfer and luminescence characteristics of organic light emitting diodes (OLEDs) with structure ITO/HAT-CN/NPB/Alq3/Al, ITO/HAT-CN/NPB/Alq3/Liq/Al, and ITO/HAT-CN/NPB/Alq3/LiF/A. The performance of the OLED device is improved by inserting an electron injection layer (EIL), which induces lowering of the electron injection barrier. We also investigated the electrical transport behaviors of p-Si/Alq3/Al, p-Si/Alq3/Liq/Al, and p-Si/Alq3/LiF/Al Schottky diodes, by using current-voltage (L-V) and capacitance-voltage (C-V) characterization methods. The parameters of diode quality factor n and barrier height φ(b) were dependent on the interlayer materials between Alq3 and Al. The barrier heights φ(b) were 0.59, 0.49, and 0.45 eV, respectively, and the diode quality factors n were 1.34, 1.31, and 1.30, respectively, obtained from the I-V characteristics. The built in potentials V(bi) were 0.41, 0.42, and 0.42 eV, respectively, obtained from the C-V characteristics. In this experiment, Liq and LiF thin film layers improved the carrier transport behaviors by increasing electron injection from Al to Alq3, and the LiF schottky diode showed better I-V performance than the Liq schottky diode. We confirmed that a Liq or LiF thin film inter-layer governs electron and hole transport at the Al/Alq3 interface, and has an important role in determining the electrical properties of OLED devices.

Shunt resistance and saturation current determination in CdTe and CIGS solar cells. Part 2: application to experimental IV measurements and comparison with other methods

NASA Astrophysics Data System (ADS)

Rangel-Kuoppa, Victor-Tapio; Albor-Aguilera, María-de-Lourdes; Hérnandez-Vásquez, César; Flores-Márquez, José-Manuel; Jiménez-Olarte, Daniel; Sastré-Hernández, Jorge; González-Trujillo, Miguel-Ángel; Contreras-Puente, Gerardo-Silverio

2018-04-01

In this Part 2 of this series of articles, the procedure proposed in Part 1, namely a new parameter extraction technique of the shunt resistance (R sh ) and saturation current (I sat ) of a current-voltage (I-V) measurement of a solar cell, within the one-diode model, is applied to CdS-CdTe and CIGS-CdS solar cells. First, the Cheung method is used to obtain the series resistance (R s ) and the ideality factor n. Afterwards, procedures A and B proposed in Part 1 are used to obtain R sh and I sat . The procedure is compared with two other commonly used procedures. Better accuracy on the simulated I-V curves used with the parameters extracted by our method is obtained. Also, the integral percentage errors from the simulated I-V curves using the method proposed in this study are one order of magnitude smaller compared with the integral percentage errors using the other two methods.

Shunt resistance and saturation current determination in CdTe and CIGS solar cells. Part 1: a new theoretical procedure and comparison with other methodologies

NASA Astrophysics Data System (ADS)

Rangel-Kuoppa, Victor-Tapio; Albor-Aguilera, María-de-Lourdes; Hérnandez-Vásquez, César; Flores-Márquez, José-Manuel; González-Trujillo, Miguel-Ángel; Contreras-Puente, Gerardo-Silverio

2018-04-01

A new proposal for the extraction of the shunt resistance (R sh ) and saturation current (I sat ) of a current-voltage (I-V) measurement of a solar cell, within the one-diode model, is given. First, the Cheung method is extended to obtain the series resistance (R s ), the ideality factor (n) and an upper limit for I sat . In this article which is Part 1 of two parts, two procedures are proposed to obtain fitting values for R sh and I sat within some voltage range. These two procedures are used in two simulated I-V curves (one in darkness and the other one under illumination) to recover the known solar cell parameters R sh , R s , n, I sat and the light current I lig and test its accuracy. The method is compared with two different common parameter extraction methods. These three procedures are used and compared in Part 2 in the I-V curves of CdS-CdTe and CIGS-CdS solar cells.

Improved GaSb surfaces using a (NH4)2S/(NH4)2S04 solution

NASA Astrophysics Data System (ADS)

Murape, D. M.; Eassa, N.; Nyamhere, C.; Neethling, J. H.; Betz, R.; Coetsee, E.; Swart, H. C.; Botha, J. R.; Venter, A.

2012-05-01

Bulk (1 0 0) n-GaSb surfaces have been treated with a sulphur based solution ((NH4)2S/(NH4)2SO4) to which sulphur has been added, not previously reported for the passivation of GaSb surfaces. Au/n-GaSb Schottky barrier diodes (SBDs) fabricated on the treated material show significant improvement compared to that of the similar SBDs on the as-received material as evidenced by the lower ideality factor (n), higher barrier height (ϕb) and lower contact resistance obtained. Additionally, the reverse leakage current, although not saturating, has been reduced by almost an order of magnitude at -0.2 V. The sample surfaces were studied by scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS). The native oxide, Sb-O, present on the as-received material is effectively removed on treating with ([(NH4)2S/(NH4)2SO4]+S) and (NH4)2S. Analysis of the as-received surface by XPS, prior to and after argon sputtering, suggests that the native oxide layer is ≤8.5 nm.

Investigation of Defects Origin in p-Type Si for Solar Applications

NASA Astrophysics Data System (ADS)

Gwóźdź, Katarzyna; Placzek-Popko, Ewa; Mikosza, Maciej; Zielony, Eunika; Pietruszka, Rafal; Kopalko, Krzysztof; Godlewski, Marek

2017-07-01

In order to improve the efficiency of a solar cell based on silicon, one must find a compromise between its price and crystalline quality. That is precisely why the knowledge of defects present in the material is of primary importance. This paper studies the defects in commercially available cheap Schottky titanium/gold silicon wafers. The electrical properties of the diodes were defined by using current-voltage and capacitance-voltage measurements. Low series resistance and ideality factor are proofs of the good quality of the sample. The concentration of the acceptors is in accordance with the manufacturer's specifications. Deep level transient spectroscopy measurements were used to identify the defects. Three hole traps were found with activation energies equal to 0.093 eV, 0.379 eV, and 0.535 eV. Comparing the values with the available literature, the defects were determined as connected to the presence of iron interstitials in the silicon. The quality of the silicon wafer seems good enough to use it as a substrate for the solar cell heterojunctions.

Growth and characterization of metamorphic InAs/GaSb tunnel heterojunction on GaAs by molecular beam epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Jheng-Sin; Clavel, Michael B.; Hudait, Mantu K., E-mail: mantu.hudait@vt.edu

The structural, morphological, optical, and electrical transport characteristics of a metamorphic, broken-gap InAs/GaSb p-i-n tunnel diode structure, grown by molecular beam epitaxy on GaAs, were demonstrated. Precise shutter sequences were implemented for the strain-balanced InAs/GaSb active layer growth on GaAs, as corroborated by high-resolution X-ray analysis. Cross-sectional transmission electron microscopy and detailed micrograph analysis demonstrated strain relaxation primarily via the formation of 90° Lomer misfit dislocations (MDs) exhibiting a 5.6 nm spacing and intermittent 60° MDs at the GaSb/GaAs heterointerface, which was further supported by a minimal lattice tilt of 180 arc sec observed during X-ray analysis. Selective area diffraction and Fastmore » Fourier Transform patterns confirmed the full relaxation of the GaSb buffer layer and quasi-ideal, strain-balanced InAs/GaSb heteroepitaxy. Temperature-dependent photoluminescence measurements demonstrated the optical band gap of the GaSb layer. Strong optical signal at room temperature from this structure supports a high-quality material synthesis. Current–voltage characteristics of fabricated InAs/GaSb p-i-n tunnel diodes measured at 77 K and 290 K demonstrated two bias-dependent transport mechanisms. The Shockley–Read–Hall generation–recombination mechanism at low bias and band-to-band tunneling transport at high bias confirmed the p-i-n tunnel diode operation. This elucidated the importance of defect control in metamorphic InAs/GaSb tunnel diodes for the implementation of low-voltage and high-performance tunnel field effect transistor applications.« less

A Metamaterial-Inspired Approach to RF Energy Harvesting

NASA Astrophysics Data System (ADS)

Fowler, Clayton; Zhou, Jiangfeng

2016-03-01

We demonstrate an RF energy harvesting rectenna design based on a metamaterial perfect absorber (MPA). With the embedded Schottky diodes, the rectenna converts captured RF energy to DC currents. The Fabry-Perot cavity resonance of the MPA greatly improves the amount of energy captured and hence improves the rectification efficiency. Furthermore, the FP resonance exhibits a high Q-factor and significantly increases the voltage across the Schottky diodes. This leads to a factor of 16 improvement of RF-DC conversion efficiency at ambient intensity level.

A Metamaterial-Inspired Approach to RF Energy Harvesting

NASA Astrophysics Data System (ADS)

Fowler, Clayton; Zhou, Jiangfeng

We demonstrate an RF energy harvesting rectenna design based on a metamaterial perfect absorber (MPA). With the embedded Schottky diodes, the rectenna converts captured RF energy to DC currents. The Fabry-Perot cavity resonance of the MPA greatly improves the amount of energy captured and hence improves the rectification efficiency. Furthermore, the FP resonance exhibits high Q-factor and significantly increases the voltage across the Schottky diodes. This leads to a factor of 16 improvement of RF-DC conversion efficiency at ambient intensity level.

120W, NA_0.15 fiber coupled LD module with 125-μm clad/NA 0.22 fiber by spatial coupling method

NASA Astrophysics Data System (ADS)

Ishige, Yuta; Kaji, Eisaku; Katayama, Etsuji; Ohki, Yutaka; Gajdátsy, Gábor; Cserteg, András.

2018-02-01

We have fabricated a fiber coupled semiconductor laser diode module by means of spatial beam combining of single emitter broad area semiconductor laser diode chips in the 9xx nm band. In the spatial beam multiplexing method, the numerical aperture of the output light from the optical fiber increases by increasing the number of laser diodes coupled into the fiber. To reduce it, we have tried the approach to improving assembly process technology. As a result, we could fabricate laser diode modules having a light output power of 120W or more and 95% power within NA of 0.15 or less from a single optical fiber with 125-μm cladding diameter. Furthermore, we have obtained that the laser diode module maintaining high coupling efficiency can be realized even around the fill factor of 0.95. This has been achieved by improving the optical alignment method regarding the fast axis stack pitch of the laser diodes in the laser diode module. Therefore, without using techniques such as polarization combining and wavelength combining, high output power was realized while keeping small numerical aperture. This contributes to a reduction in unit price per light output power of the pumping laser diode module.

SU-E-T-260: Pediatric Total Body Irradiation Calculations and In-Vivo Dosimetry Using Diodes and OSLD's

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chungbin, S; Fatyga, M

Purpose: To verify that a photon total body irradiation (TBI) calculation method scales properly from adult to pediatric dimensions and to determine TBI in-vivo dosimetry correction factors for diodes and optically stimulated luminescent dosimeters (OSLD's). Methods: TBI technique used is 400 SAD 18 MV opposed laterals with beam spoiler. Water bags are used to supplement narrower lateral dimensions for patient treatments. To verify that dose calculations scale properly with decreasing dimensions, CAX doses were measured and compared to calculations for different rectangular phantom geometries: (L=length(cm), H=height(cm), d=depth(cm)): L(30)xH(30) (d=3-25), L(30)xH(12)(d=2–20), L(13)xH(13) (d=5–13), L(30)x(H=10–40) d=15, L(30–150) x H(10) (d=15). In infantmore » geometry, measured off axis “leg” dose (L(30)xH(2.5–10.6), d=7)) was compared to CAX (“body” L(30)xH(10)(d=7) adjacent to “leg”). Entrance and exit doses were measured with surface diodes, diodes with buildup, OSLD's, as well as ion chambers for comparison. Correction factors ((ion chamber CAX dose)/(in vivo dose)) were calculated for surface diodes, diodes with buildup, OSLD's, and ion chamber. Results: All rectangular phantom measurements agree with calculated within 2.5%. For L(30)xH(30), L(30)xH(12), L(13)xH(13), L(30)x(H=10–40) and L(30–80)xH(10) agreement was within 1%. For the infant geometry, the ratio of leg dose to CAX varies from 0.956 (h=2.5) to 0.995 (h=10.6). The range of in-vivo dosimetry entrance+exit to CAX dose correction factors varied by dosimeter (diode: 0.883–1.015, surface diode: 1.008–1.214, ion chamber: 0.924–1.084, OSLD: 0.920–1.106). Conclusion: TBI calculations scaled properly to pediatric dimensions. In-vivo dosimetry with various detectors demonstrated similar trends with different magnitudes. OSLD measurements agreed well with ion chamber measurements.« less

Spectral perturbations from silicon diode detector encapsulation and shielding in photon fields.

PubMed

Eklund, Karin; Ahnesjö, Anders

2010-11-01

Silicon diodes are widely used as detectors for relative dose measurements in radiotherapy. The common manufacturing practice is to encapsulate the diodes in plastic for protection and to facilitate mounting in scanning devices. Diodes intended for use in photon fields commonly also have a shield of a high atomic number material (usually tungsten) integrated into the encapsulation to selectively absorb low-energy photons to which silicon diodes would otherwise over-response. However, new response models based on cavity theories and spectra calculations have been proposed for direct correction of the readout from unshielded (e.g., "electron") diodes used in photon fields. This raises the question whether it is correct to assume that the spectrum in a water phantom at the location of the detector cavity is not perturbed by the detector encapsulation materials. The aim of this work is to investigate the spectral effects of typical encapsulations, including shielding, used for clinical diodes. The effects of detector encapsulation of an unshielded and a shielded commercial diode on the spectra at the detector cavity location are studied through Monte Carlo simulations with PENELOPE-2005. Variance reduction based on correlated sampling is applied to reduce the CPU time needed for the simulations. The use of correlated sampling is found to be efficient and to not introduce any significant bias to the results. Compared to reference spectra calculated in water, the encapsulation for an unshielded diode is demonstrated to not perturb the spectrum, while a tungsten shielded diode caused not only the desired decrease in low-energy scattered photons but also a large increase of the primary electron fluence. Measurements with a shielded diode in a 6 MV photon beam proved that the shielding does not completely remove the field-size dependence of the detector response caused by the over-response from low-energy photons. Response factors of a properly corrected unshielded diode were shown to give comparable, or better, results than the traditionally used shielded diode. Spectra calculated for photon fields in water can be directly used for modeling the response of unshielded silicon diodes with plastic encapsulations. Unshielded diodes used together with appropriate corrections can replace shielded diodes in photon dose measurements.

Dynamic response of a fiber-optic ring resonator: Analysis with influences of light-source parameters

NASA Astrophysics Data System (ADS)

Seraji, Faramarz E.

2009-03-01

In practice, dynamic behavior of fiber-optic ring resonator (FORR) appears as a detrimental factor to influence the transmission response of the FORR. This paper presents dynamic response analysis of the FORR by considering phase modulation of the FORR loop and sinewave modulation of input signal applied to the FORR from a laser diode. The analysis investigates the influences of modulation frequency and amplitude modulation index of laser diode, loop delay time of the FORR, phase angle between FM and AM response of laser diode, and laser diode line-width on dynamic response of the FORR. The analysis shows that the transient response of the FORR strongly depends on the product of modulation frequency and loop delay time, coupling and transmission coefficients of the FORR. The analyses presented here may have applications in optical systems employing an FORR with a laser diode source.

Frequency-doubled DBR-tapered diode laser for direct pumping of Ti:sapphire lasers generating sub-20 fs pulses.

PubMed

Müller, André; Jensen, Ole Bjarlin; Unterhuber, Angelika; Le, Tuan; Stingl, Andreas; Hasler, Karl-Heinz; Sumpf, Bernd; Erbert, Götz; Andersen, Peter E; Petersen, Paul Michael

2011-06-20

For the first time a single-pass frequency doubled DBR-tapered diode laser suitable for pumping Ti:sapphire lasers generating ultrashort pulses is demonstrated. The maximum output powers achieved when pumping the Ti:sapphire laser are 110 mW (CW) and 82 mW (mode-locked) respectively at 1.2 W of pump power. This corresponds to a reduction in optical conversion efficiencies to 75% of the values achieved with a commercial diode pumped solid-state laser. However, the superior electro-optical efficiency of the diode laser improves the overall efficiency of the Ti:sapphire laser by a factor > 2. The optical spectrum emitted by the Ti:sapphire laser when pumped with our diode laser shows a spectral width of 112 nm (FWHM). Based on autocorrelation measurements, pulse widths of less than 20 fs can therefore be expected.

High-Fluence Light-Emitting Diode-Generated Red Light Modulates the Transforming Growth Factor-Beta Pathway in Human Skin Fibroblasts.

PubMed

Mamalis, Andrew; Jagdeo, Jared

2018-05-24

Skin fibrosis is a significant medical problem with limited available treatment modalities. The key cellular characteristics include increased fibroblast proliferation, collagen production, and transforming growth factor-beta (TGF-B)/SMAD pathway signaling. The authors have previously shown that high-fluence light-emitting diode red light (HF-LED-RL) decreases cellular proliferation and collagen production. Herein, the authors investigate the ability of HF-LED-RL to modulate the TGF-B/SMAD pathway. Normal human dermal fibroblasts were cultured and irradiated with a commercially available hand-held LED array. After irradiation, cell lysates were collected and levels of pSMAD2, TGF-Beta 1, and TGF-Beta I receptor were measured using Western blot. High-fluence light-emitting diode red light decreased TGF-Beta 1 ligand (TGF-B1) levels after irradiation. 320 J/cm HF-LED-RL resulted in 59% TGF-B1 and 640 J/cm HF-LED-RL resulted in 54% TGF-B1, relative to controls. 640 J/cm HF-LED-RL resulted in 62% pSMAD2 0 hours after irradiation, 65% pSMAD2 2 hours after irradiation, and 95% 4 hours after irradiation, compared with matched controls. High-fluence light-emitting diode red light resulted in no significant difference in transforming growth factor-beta receptor I levels compared with matched controls. Skin fibrosis is a significant medical problem with limited available treatment modalities. Light-emitting diode-generated red light is a safe, economic, and noninvasive modality that has a body of in vitro evidence supporting the reduction of key cellular characteristics associated with skin fibrosis.

A new single crystal diamond dosimeter for small beam: comparison with different commercial active detectors.

PubMed

Marsolat, F; Tromson, D; Tranchant, N; Pomorski, M; Le Roy, M; Donois, M; Moignau, F; Ostrowsky, A; De Carlan, L; Bassinet, C; Huet, C; Derreumaux, S; Chea, M; Cristina, K; Boisserie, G; Bergonzo, P

2013-11-07

Recent developments of new therapy techniques using small photon beams, such as stereotactic radiotherapy, require suitable detectors to determine the delivered dose with a high accuracy. The dosimeter has to be as close as possible to tissue equivalence and to exhibit a small detection volume compared to the size of the irradiation field, because of the lack of lateral electronic equilibrium in small beam. Characteristics of single crystal diamond (tissue equivalent material Z = 6, high density) make it an ideal candidate to fulfil most of small beam dosimetry requirements. A commercially available Element Six electronic grade synthetic diamond was used to develop a single crystal diamond dosimeter (SCDDo) with a small detection volume (0.165 mm(3)). Long term stability was studied by irradiating the SCDDo in a (60)Co beam over 14 h. A good stability (deviation less than ± 0.1%) was observed. Repeatability, dose linearity, dose rate dependence and energy dependence were studied in a 10 × 10 cm(2) beam produced by a Varian Clinac 2100 C linear accelerator. SCDDo lateral dose profile, depth dose curve and output factor (OF) measurements were performed for small photon beams with a micro multileaf collimator m3 (BrainLab) attached to the linac. This study is focused on the comparison of SCDDo measurements to those obtained with different commercially available active detectors: an unshielded silicon diode (PTW 60017), a shielded silicon diode (Sun Nuclear EDGE), a PinPoint ionization chamber (PTW 31014) and two natural diamond detectors (PTW 60003). SCDDo presents an excellent spatial resolution for dose profile measurements, due to its small detection volume. Low energy dependence (variation of 1.2% between 6 and 18 MV photon beam) and low dose rate dependence of the SCDDo (variation of 1% between 0.53 and 2.64 Gy min(-1)) are obtained, explaining the good agreement between the SCDDo and the efficient unshielded diode (PTW 60017) in depth dose curve measurements. For field sizes ranging from 0.6 × 0.6 to 10 × 10 cm(2), OFs obtained with the SCDDo are between the OFs measured with the PinPoint ionization chamber and the Sun Nuclear EDGE diode that are known to respectively underestimate and overestimate OF values in small beam, due to the large detection volume of the chamber and the non-water equivalence of both detectors.

Characterization of an in vivo diode dosimetry system for clinical use

PubMed Central

Huang, Kai; Bice, William S.; Hidalgo‐Salvatierra, Oscar

2003-01-01

An in vivo dosimetry system that uses p‐type semiconductor diodes with buildup caps was characterized for clinical use on accelerators ranging in energy from 4 to 18 MV. The dose per pulse dependence was investigated. This was done by altering the source‐surface distance, field size, and wedge for photons. The off‐axis correction and effect of changing repetition rate were also investigated. A model was developed to fit the measured two‐dimensional diode correction factors. PACS number(s): 87.66.–a, 87.52.–g PMID:12777148

Progress in integrated-circuit horn antennas for receiver applications. Part 2: A 90 GHz quasi-integrated horn antenna receiver

NASA Technical Reports Server (NTRS)

Ali-Ahmad, Walid Y.; Eleftheriades, George V.; Rebeiz, Gabriel M.

1992-01-01

A receiver belonging to the family of integrated planar receivers has been developed at 90 GHz. It consists of a planar Schottky-diode placed at the feed of a dipole-probe suspended inside an integrated horn antenna. The measured planar mixer single-sideband conversion loss at 91.2 GHz (LO) with a 200 MHz IF frequency is 8.3dB plus or minus 0.3dB. The low cost of fabrication and simplicity of this design makes it ideal for millimeter and submillimeter-wave receivers.

Compact collimators designed with a modified point approximation for light-emitting diodes

NASA Astrophysics Data System (ADS)

Luo, Tao; Wang, Gang

2017-09-01

We present a novel freeform lens design method for an application to LED collimating illumination. The method is derived from a basic geometric-optics analysis and construction approach. By using this method, a compact collimated lenses with Aspect Ratio = 0.219 is presented. Moreover, the utility efficiency (UE) inside the angle defined by ideal concentrator hypothesis with different lens-to-LED size ratios for both this lens and TIR lens are presented. A prototype of the collimator lens is also made to verify the practical performance of the lens, which has light distribution very compatible with the simulation results.

Hands-on work fine-tunes X-band PIN-diode duplexer

NASA Astrophysics Data System (ADS)

Schneider, P.

1985-06-01

Computer-aided design (CAD) programs for fabricating PIN-diode duplexers are useful in avoiding time-consuming cut-and-try techniques. Nevertheless, to attain minimum insertion loss, only experimentation yields the optimum microstrip circuitry. A PIN-diode duplexer, consisting of two SPST PIN-diode switches and a pair of 3-dB Lange microstrip couplers, designed for an X-band transmit/receive module exemplifies what is possible when computer-derived designs and experimentation are used together. Differences between the measured and computer-generated figures for insertion loss can be attributed to several factors not included in the CAD program - for example, radiation and connector losses. Mechanical tolerances of the microstrip PC board and variations in the SMA connector-to-microstrip transition contribute to the discrepancy.

Graphene, conducting polymer and their composites as transparent and current spreading electrode in GaN solar cells

NASA Astrophysics Data System (ADS)

Mahala, Pramila; Kumar, Ajay; Nayak, Sasmita; Behura, Sanjay; Dhanavantri, Chenna; Jani, Omkar

2016-04-01

Understanding the physics of charge carrier transport at graphene/p-GaN interface is critical for achieving efficient device functionality. Currently, the graphene/p-GaN interface is being explored as light emitting diodes, however this interface can be probed as a potential photovoltaic cell. We report the intimate interfacing of mechanically exfoliated graphene (EG), conducting polymer (PEDOT:PSS) and composite of reduced graphene oxide (rGO) and PEDOT:PSS with a wide band gap p-GaN layer. To explore their potential in energy harvesting, three heterojunction devices such as: (i) EG/p-GaN/sapphire, (ii) PEDOT:PSS/p-GaN/sapphire and (iii) PEDOT:PSS(rGO)/p-GaN/sapphire are designed and their photovoltaic characteristics are examined. It is interesting to observe that the EG/p-GaN/sapphire solar cell exhibits high open-circuit voltage of 0.545 V with low ideality factor and reverse saturation current. However, improved short circuit current density (13.7 mA/cm2) is noticed for PEDOT:PSS/p-GaN/sapphire solar cell because of enhanced conductivity accompanied by high transmittance for PEDOT:PSS. Further, the low series resistance for PEDOT:PSS(rGO)/p-GaN/sapphire is observed suggesting that the PEDOT:PSS and rGO composite is well dispersed and exhibits low interfacial resistances with p-GaN. The present investigation leverages the potential of graphene, conducting polymer and their composites as dual capability of (a) transparent and current spreading electrode and (b) an active top layer to make an intimate contact with wide bandgap p-type GaN for possible prospect towards high performance diodes, switches and solar cells.

Relative dosimetry with an MR-linac: Response of ion chambers, diamond, and diode detectors for off-axis, depth dose, and output factor measurements.

PubMed

O'Brien, Daniel J; Dolan, James; Pencea, Stefan; Schupp, Nicholas; Sawakuchi, Gabriel O

2018-02-01

The purpose of this study was to acquire beam data for an MR-linac, with and without a 1.5 T magnetic field, by using a variety of commercially available detectors to assess their relative response in the magnetic field. The impact of the magnetic field on the measured dose distribution was also assessed. An MR-safe 3D scanning water phantom was used to measure output factors, depth dose curves, and off-axis profiles for various depths and for field sizes between 2 × 2 cm 2 and 22 × 22 cm 2 for an Elekta MR-linac beam with the orthogonal 1.5 T magnetic field on or off. An on-board MV portal imaging system was used to ensure that the reproducibility of the detector position, both with and without the magnetic field, was within 0.1 mm. The detectors used included ionization chambers with large, medium, and small sensitive volumes; a diamond detector; a shielded diode; and an unshielded diode. The offset of the effective point of measurement of the ionization chambers was found to be reduced by at least half for each chamber in the direction parallel with the beam. A lateral shift of similar magnitude was also introduced to the chambers' effective point of measurement toward the average direction of the Lorentz force. A similar lateral shift (but in the opposite direction) was also observed for the diamond and diode detectors. The measured lateral shift in the dose distribution was independent of depth and field size for each detector for fields between 2 × 2 cm 2 and 10 × 10 cm 2 . The shielded diode significantly misrepresented the dose distribution in the lateral direction perpendicular to the magnetic field, making it seem more symmetric. The percentage depth dose was generally found to be lower with the magnetic field than without, but this difference was reduced as field size increased. The depth of maximum dose showed little dependence on field size in the presence of the magnetic field, with values from 1.2 cm to 1.3 cm between the 2 × 2 cm 2 and 22 × 22 cm 2 fields. Output factors measured in the magnetic field at the center of the beam profile produced a larger spread of values between detectors for fields smaller than 10 × 10 cm 2 (with a spread of 2% at 3 × 3 cm 2 ). The spread of values was more consistent when the output factors were measured at the point of peak intensity of the lateral dose distribution instead (except for the shielded diode which differed by up to 2% depending on field size). The magnetic field of the MR-linac alters the effective point of measurement of ionization chambers, shifting it both downstream and laterally. Shielded diodes produce incorrect and misleading dose profiles. The output factor measured at the point of peak intensity in the lateral dose distribution is more robust than the conventional output factor (measured at central axis). Diodes are not recommended for output factor measurements in the magnetic field. © 2017 American Association of Physicists in Medicine.

Modeling silicon diode energy response factors for use in therapeutic photon beams.

PubMed

Eklund, Karin; Ahnesjö, Anders

2009-10-21

Silicon diodes have good spatial resolution, which makes them advantageous over ionization chambers for dosimetry in fields with high dose gradients. However, silicon diodes overrespond to low-energy photons, that are more abundant in scatter which increase with large fields and larger depths. We present a cavity-theory-based model for a general response function for silicon detectors at arbitrary positions within photon fields. The model uses photon and electron spectra calculated from fluence pencil kernels. The incident photons are treated according to their energy through a bipartition of the primary beam photon spectrum into low- and high-energy components. Primary electrons from the high-energy component are treated according to Spencer-Attix cavity theory. Low-energy primary photons together with all scattered photons are treated according to large cavity theory supplemented with an energy-dependent factor K(E) to compensate for energy variations in the electron equilibrium. The depth variation of the response for an unshielded silicon detector has been calculated for 5 x 5 cm(2), 10 x 10 cm(2) and 20 x 20 cm(2) fields in 6 and 15 MV beams and compared with measurements showing that our model calculates response factors with deviations less than 0.6%. An alternative method is also proposed, where we show that one can use a correlation with the scatter factor to determine the detector response of silicon diodes with an error of less than 3% in 6 MV and 15 MV photon beams.

Characterization technique for inhomogeneous 4H-SiC Schottky contacts: A practical model for high temperature behavior

NASA Astrophysics Data System (ADS)

Brezeanu, G.; Pristavu, G.; Draghici, F.; Badila, M.; Pascu, R.

2017-08-01

In this paper, a characterization technique for 4H-SiC Schottky diodes with varying levels of metal-semiconductor contact inhomogeneity is proposed. A macro-model, suitable for high-temperature evaluation of SiC Schottky contacts, with discrete barrier height non-uniformity, is introduced in order to determine the temperature interval and bias domain where electrical behavior of the devices can be described by the thermionic emission theory (has a quasi-ideal performance). A minimal set of parameters, the effective barrier height and peff, the non-uniformity factor, is associated. Model-extracted parameters are discussed in comparison with literature-reported results based on existing inhomogeneity approaches, in terms of complexity and physical relevance. Special consideration was given to models based on a Gaussian distribution of barrier heights on the contact surface. The proposed methodology is validated by electrical characterization of nickel silicide Schottky contacts on silicon carbide (4H-SiC), where a discrete barrier distribution can be considered. The same method is applied to inhomogeneous Pt/4H-SiC contacts. The forward characteristics measured at different temperatures are accurately reproduced using this inhomogeneous barrier model. A quasi-ideal behavior is identified for intervals spanning 200 °C for all measured Schottky samples, with Ni and Pt contact metals. A predictable exponential current-voltage variation over at least 2 orders of magnitude is also proven, with a stable barrier height and effective area for temperatures up to 400 °C. This application-oriented characterization technique is confirmed by using model parameters to fit a SiC-Schottky high temperature sensor's response.

Spin-based single-photon transistor, dynamic random access memory, diodes, and routers in semiconductors

NASA Astrophysics Data System (ADS)

Hu, C. Y.

2016-12-01

The realization of quantum computers and quantum Internet requires not only quantum gates and quantum memories, but also transistors at single-photon levels to control the flow of information encoded on single photons. Single-photon transistor (SPT) is an optical transistor in the quantum limit, which uses a single photon to open or block a photonic channel. In sharp contrast to all previous SPT proposals which are based on single-photon nonlinearities, here I present a design for a high-gain and high-speed (up to THz) SPT based on a linear optical effect: giant circular birefringence induced by a single spin in a double-sided optical microcavity. A gate photon sets the spin state via projective measurement and controls the light propagation in the optical channel. This spin-cavity transistor can be directly configured as diodes, routers, DRAM units, switches, modulators, etc. Due to the duality as quantum gate and transistor, the spin-cavity unit provides a solid-state platform ideal for future Internet: a mixture of all-optical Internet with quantum Internet.

Highly Efficient Solution-Processed Deep-Red Organic Light-Emitting Diodes Based on an Exciplex Host Composed of a Hole Transporter and a Bipolar Host.

PubMed

Huang, Manli; Jiang, Bei; Xie, Guohua; Yang, Chuluo

2017-10-19

With the aim to achieve highly efficient deep-red emission, we introduced an exciplex forming cohost, 4,4',4″-tris(3-methylphenylphenylamino)triphenylamine (m-MTDATA): 2,5-bis(2-(9H-carbazol-9-yl)phenyl)-1,3,4-oxadiazole (o-CzOXD) (1:1). Due to the efficient triplet up-conversion processes upon the exciplex forming cohost, excellent performances of the devices were achieved with deep-red emission. Using the heteroleptic iridium complexes as the guest dopants, the solution-processed deep-red phosphorescent organic light-emitting diodes (PhOLEDs) with the iridium(III) bis(6-(4-(tert-butyl)phenyl)phenanthridine)acetylacetonate [(TP-BQ) 2 Ir(acac)]-based phosphorescent emitter exhibited an electroluminescent peak at 656 nm and a maximum external quantum efficiency (EQE) of 11.9%, which is 6.6 times that of the device based on the guest emitter doped in the polymer-based cohost. The unique exciplex with a typical hole transporter and a bipolar material is ideal and universal for hosting the red PhOLEDs and tremendously improves the device performances.

Dead layer on silicon p-i-n diode charged-particle detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wall, B. L.; Amsbaugh, John F.; Beglarian, A.

Abstract Semiconductor detectors in general have a dead layer at their surfaces that is either a result of natural or induced passivation, or is formed during the process of making a contact. Charged particles passing through this region produce ionization that is incompletely collected and recorded, which leads to departures from the ideal in both energy deposition and resolution. The silicon p-i-n diode used in the KATRIN neutrinomass experiment has such a dead layer. We have constructed a detailed Monte Carlo model for the passage of electrons from vacuum into a silicon detector, and compared the measured energy spectra tomore » the predicted ones for a range of energies from 12 to 20 keV. The comparison provides experimental evidence that a substantial fraction of the ionization produced in the "dead" layer evidently escapes by discussion, with 46% being collected in the depletion zone and the balance being neutralized at the contact or by bulk recombination. The most elementary model of a thinner dead layer from which no charge is collected is strongly disfavored.« less

Diffraction-limited 577 nm true-yellow laser by frequency doubling of a tapered diode laser

NASA Astrophysics Data System (ADS)

Christensen, Mathias; Vilera, Mariafernanda; Noordegraaf, Danny; Hansen, Anders K.; Buß, Thomas; Jensen, Ole B.; Skovgaard, Peter M. W.

2018-02-01

A wide range of laser medical treatments are based on coagulation of blood by absorption of the laser radiation. It has, therefore, always been a goal of these treatments to maximize the ratio of absorption in the blood to that in the surrounding tissue. For this purpose lasers at 577 nm are ideal since this wavelength is at the peak of the absorption in oxygenated hemoglobin. Furthermore, 577 nm has a lower absorption in melanin when compared to green wavelengths (515 - 532 nm), giving it an advantage when treating at greater penetration depth. Here we present a laser system based on frequency doubling of an 1154 nm Distributed Bragg Reflector (DBR) tapered diode laser, emitting 1.1 W of single frequency and diffraction limited yellow light at 577 nm, corresponding to a conversion efficiency of 30.5%. The frequency doubling is performed in a single pass configuration using a cascade of two bulk non-linear crystals. The system is power stabilized over 10 hours with a standard deviation of 0.13% and the relative intensity noise is measured to be 0.064 % rms.

Study on a discal TEM-TE{sub 11} mode converter loaded high-efficiency magnetically insulated transmission line oscillator

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Xiaoping, E-mail: zhangxiaoping@nudt.edu.cn; Yuan, Chengwei; Li, Yangmei

2015-12-15

An integrative high power microwave device is proposed, which consists of a high-efficiency L-band Magnetically Insulated Transmission Line Oscillator (MILO) and a discal TEM–TE{sub 11} mode converter. The MILO with a shrunken load composed of a step-like cathode and a ladder-like beam collector can generate a 1.58 GHz, 5.7 GW microwave with the efficiency of 20.8% at the diode voltage of 560 kV in simulation. The discal converter utilizes a pair of sectorial two-double radial waveguides and a pair of sectorial cross section waveguides to adjust the phase-difference and realizes the mode conversion in a length of less than halfmore » wavelength at 1.58 GHz. In the preliminary experiment, the proposed device generates over 2 GW, 1.575 GHz microwave with the pulse duration of over 50 ns in a 420 kV diode voltage; the corresponding efficiency is 14.9%; the radiation pattern is the ideal TE{sub 11} mode.« less

Design and construction of a novel 1H/19F double-tuned coil system using PIN-diode switches at 9.4T.

PubMed

Choi, Chang-Hoon; Hong, Suk-Min; Ha, YongHyun; Shah, N Jon

2017-06-01

A double-tuned 1 H/ 19 F coil using PIN-diode switches was developed and its performance evaluated. The is a key difference from the previous developments being that this design used a PIN-diode switch in series with an additionally inserted inductor in parallel to one of the capacitors on the loop. The probe was adjusted to 19 F when the reverse bias voltage was applied (PIN-diode OFF), whilst it was switched to 1 H when forward current was flowing (PIN-diode ON). S-parameters and Q-factors of single- and double-tuned coils were examined and compared with/without a phantom on the bench. Imaging experiments were carried out on a 9.4T preclinical scanner. All coils were tuned at resonance frequencies and matched well. It is shown that the Q-ratio and SNR of double-tuned coil at 19 F frequency are nearly as good as those of a single-tuned coil. Since the operating frequency was tuned to 19 F when the PIN-diodes were turned off, losses due to PIN-diodes were substantially lower resulting in the provision of excellent image quality of X-nuclei. Copyright © 2017 Elsevier Inc. All rights reserved.

Ideal cardiovascular health and psychosocial risk factors among Finnish female municipal workers.

PubMed

Veromaa, Veera; Kautiainen, Hannu; Saxen, Ulla; Malmberg-Ceder, Kirsi; Bergman, Elina; Korhonen, Päivi E

2017-02-01

Ideal cardiovascular health has been defined by the American Heart Association as the absence of disease and the presence of seven key health factors and behaviours. However, little is known about the mental aspects associated with ideal cardiovascular health metrics. The objective of this study was to assess the relationships between psychosocial risk factors and ideal cardiovascular health metrics among Finnish women at municipal work units. A cross-sectional study was conducted in Finland among 732 female employees (mean±SD age 48±10 years) from ten work units in 2014. Ideal cardiovascular health metrics were evaluated with a physical examination, laboratory tests, medical history and self-administrated questionnaires. Psychosocial risk factors (social isolation, stress, depressive symptoms, anxiety, hostility and type D personality) were assessed with core questions as suggested by the European Society of Cardiology. The prevalence of having 5-7 ideal cardiovascular health metrics was 183 (25.0%), of whom 54.1% had at least one psychosocial risk factor. Anxiety (31.3%), work stress (30.7%) and type D personality (26.1%) were the most prevalent of the psychosocial risk factors. The prevalence of depressive symptoms ( p<0.001) and type D personality ( p=0.049) decreased linearly according to the sum of ideal cardiovascular health metrics after adjustment for age and years of education. Even women with good cardiovascular health are affected by psychosocial risk factors at municipal work units. Although the association is possibly bidirectional, screening and treating depression and dealing with type D personality might be crucial in improving cardiovascular health among women.

Analysis of different forward current-voltage behaviours of Al implanted 4H-SiC vertical p-i-n diodes

NASA Astrophysics Data System (ADS)

Megherbi, M. L.; Pezzimenti, F.; Dehimi, L.; Rao, S.; Della Corte, F. G.

2015-07-01

In this work different experimental current-voltage behaviours of several Al implanted 4H-SiC p-i-n diodes are investigated by means of numerical simulations in a wide range of currents and temperatures. Some devices for which recombination and tunneling are the dominant current processes at all biases are classified as "leaky" diodes. The well behaved diodes, instead, show good rectifying characteristics with a current conduction due to tunneling below 1.7 V, recombination between 1.7 V and 2.5 V, and diffusion processes above 2.5 V. At higher current regimes, a series resistance in excess of 1 mΩ cm2 becomes the main current limiting factor. Depending on the relative weight between the contact resistances and the internal diode resistance, different temperature dependencies of the current are obtained. A good agreement between numerical and measured data is achieved employing temperature-dependent carrier lifetime and mobility as fitting parameters.

100W high-brightness multi-emitter laser pump

NASA Astrophysics Data System (ADS)

Duesterberg, Richard; Xu, Lei; Skidmore, Jay A.; Guo, James; Cheng, Jane; Du, Jihua; Johnson, Brad; Vecht, David L.; Guerin, Nicolas; Huang, Benlih; Yin, Dongliang; Cheng, Peter; Raju, Reddy; Lee, Kong Weng; Cai, Jason; Rossin, Victor; Zucker, Erik P.

2011-03-01

We report results of a spatially-multiplexed broad area laser diode platform designed for efficient pumping of fiber lasers or direct-diode systems. Optical output power in excess of 100W from a 105μm core, 0.15NA fiber is demonstrated with high coupling efficiency. The compact form factor and low thermal resistance enable tight packing densities needed for kW-class fiber laser systems. Broad area laser diodes have been optimized to reduce near- and far-field performance and prevent blooming without sacrificing other electro-optic parameters. With proper lens optimization this produces ~5% increase in coupling / wall plug efficiency for our design. In addition to performance characteristics, an update on long term reliability testing of 9XX nm broad area laser diode is provided that continues to show no wear out under high acceleration. Under nominal operating conditions of 12W ex-facet power at 25C, the diode mean time to failure (MTTF) is forecast to be ~ 480 kh.

1THz synchronous tuning of two optical synthesizers

NASA Astrophysics Data System (ADS)

Neuhaus, Rudolf; Rohde, Felix; Benkler, Erik; Puppe, Thomas; Raab, Christoph; Unterreitmayer, Reinhard; Zach, Armin; Telle, Harald R.; Stuhler, Jürgen

2016-04-01

Single-frequency optical synthesizers (SFOS) provide an optical field with arbitrarily adjustable frequency and phase which is phase-coherently linked to a reference signal. Ideally, they combine the spectral resolution of narrow linewidth frequency stabilized lasers with the broad spectral coverage of frequency combs in a tunable fashion. In state-of-the-art SFOSs tuning across comb lines requires comb line order switching,1, 2 which imposes technical overhead with problems like forbidden frequency gaps or strong phase glitches. Conventional tunable lasers often tune over only tens of GHz before mode-hops occur. Here, we present a novel type of SFOSs, which relies on a serrodyne technique with conditional flyback,3 shifting the carrier frequency of the employed frequency comb without an intrusion into the comb generator. It utilizes a new continuously tunable diode laser that tunes mode-hop-free across the full gain spectrum of the integrated laser diode. We investigate the tuning behavior of two identical SFOSs that share a common reference, by comparing the phases of their output signals. Previously, we achieved phase-stable and cycle-slip free frequency tuning over 28.1 GHz with a maximum zero-to-peak phase deviation of 62 mrad4 when sharing a common comb generator. With the new continuously tunable lasers, the SFOSs tune synchronously across nearly 17800 comb lines (1 THz). The tuning range in this approach can be extended to the full bandwidth of the frequency comb and the 110 nm mode-hop-free tuning range of the diode laser.

Compact 2100 nm laser diode module for next-generation DIRCM

NASA Astrophysics Data System (ADS)

Dvinelis, Edgaras; Greibus, Mindaugas; TrinkÅ«nas, Augustinas; NaujokaitÄ--, Greta; Vizbaras, Augustinas; Vizbaras, Dominykas; Vizbaras, Kristijonas

2017-10-01

Compact high-power 2100 nm laser diode module for next-generation directional infrared countermeasure (DIRCM) systems is presented. Next-generation DIRCM systems require compact, light-weight and robust laser modules which could provide intense IR light emission capable of disrupting the tracking sensor of heat-seeking missile. Currently used solid-state and fiber laser solutions for mid-IR band are bulky and heavy making them difficult to implement in smaller form-factor DIRCM systems. Recent development of GaSb laser diode technology greatly improved optical output powers and efficiencies of laser diodes working in 1900 - 2450 nm band [1] while also maintaining very attractive size, weight, power consumption and cost characteristics. 2100 nm laser diode module presented in this work performance is based on high-efficiency broad emitting area GaSb laser diode technology. Each laser diode emitter is able to provide 1 W of CW output optical power with working point efficiency up to 20% at temperature of 20 °C. For output beam collimation custom designed fast-axis collimator and slow-axis collimator lenses were used. These lenses were actively aligned and attached using UV epoxy curing. Total 2 emitters stacked vertically were used in 2100 nm laser diode module. Final optical output power of the module goes up to 2 W at temperature of 20 °C. Total dimensions of the laser diode module are 35 x 25 x 16 mm (L x W x H) with a weight of 28 grams. Finally output beam is bore-sighted to mechanical axes of the module housing allowing for easy integration into next-generation DIRCM systems.

SU-F-T-582: Small Field Dosimetry in Radiosurgery Collimators with a Stealth Chamber

DOE Office of Scientific and Technical Information (OSTI.GOV)

Azcona, J; Barbes, B

2016-06-15

Purpose: The extraction of a reference signal for measuring small fields in scanning mode can be problematic. In this work we describe the use of a transmission chamber in small field dosimetry for radiosurgery collimators and compare TMR curves obtained with stereotactic diode and microionization chamber. Methods: Four radiosurgery cones of diameters 5, 10, 12.5, and 15mm supplied by Elekta Medical were commissioned in a 6MV FFF beam from an Elekta Versa linac. A transmission chamber manufactured by IBA (Stealth chamber) was attached to the lower part of the collimators and used for PDD and profile measurements in scanning modemore » with a Scanditronix stereotactic diode. It was also used for centering the stereotactic diode in the water tank to measure TMR and output factors, by integrating the signal. TMR measurements for all collimators and the OF for the largest collimator were also acquired on a polystyrene PTW 29672 phantom with a PTW PinPoint 3D chamber 0.016 cm3 volume. Results: Measured TMR with diode and microionization chamber agreed very well with differences larger than 1% only for depths above 15cm, except the smaller collimator, for which differences were always smaller than 2%. Calculated TMR were significantly different (up to 7%) from measured TMR. The differences are attributed to the change in response of the diode with depth, because the effective field aperture varies with depth. Furthermore, neglecting the ratio of phantom-scatter factors in the conversion formula also contributes to this difference. OF measured with diode and chamber showed a difference of 3.5%. Conclusion: The transmission chamber overcomes the problem of extracting a reference signal and is of great help for small field commissioning. Calculating TMR from PDD is strongly discouraged. Good agreement was found when comparing measurements of TMR with stereotactic diode in water with measurements with microionization chamber in polystyrene.« less

SU-F-T-490: Separating Effects Influencing Detector Response in Small MV Photon Fields

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wegener, S; Sauer, O

2016-06-15

Purpose: Different detector properties influence their responses especially in field sizes below the lateral electron range. Due to the finite active volume, the detector density and electron perturbation at other structural parts, the response factor is in general field size dependent. We aimed to visualize and separate the main effects contributing to detector behavior for a variety of detector types. This was achieved in an experimental setup, shielding the field center. Thus, effects caused by scattered radiation could be examined separately. Methods: Signal ratios for field sizes down to 8 mm (SSD 90 cm, water depth 10 cm) of amore » 6MV beam from a Siemens Primus LINAC were recorded with several detectors: PTW microDiamond and PinPoint ionization chamber, shielded diodes (PTW P-60008, IBA PFD and SNC Edge) and unshielded diodes (PTW E-60012 and IBA SFD). Measurements were carried out in open fields and with an aluminum pole of 4 mm diameter as a central block. The geometric volume effect was calculated from profiles obtained with Gafchromic EBT3 film, evaluated using FilmQA Pro software (Ashland, USA). Results: Volume corrections were 1.7% at maximum. After correction, in small open fields, unshielded diodes showed a lower response than the diamond, i.e. diamond detector over-response seems to be higher than that for unshielded diodes. Beneath the block, this behavior was amplified by a factor of 2. For the shielded diodes, the overresponse for small open fields could be confirmed. However their lateral response behavior was strongly type dependent, e.g. the signal ratio dropped from 1.02 to 0.98 for the P-60008 diode. Conclusion: The lateral detector response was experimentally examined. Detector volume and density alone do not fully account for the field size dependence of detector response. Detector construction details play a major role, especially for shielded diodes.« less

Current from a nano-gap hyperbolic diode using shape-factors: Theory

NASA Astrophysics Data System (ADS)

Jensen, Kevin L.; Shiffler, Donald A.; Peckerar, Martin; Harris, John R.; Petillo, John J.

2017-08-01

Quantum tunneling by field emission from nanoscale features or sharp field emission structures for which the anode-cathode gap is nanometers in scale ("nano diodes") experience strong deviations from the planar image charge lowered tunneling barrier used in the Murphy and Good formulation of the Fowler-Nordheim equation. These deviations alter the prediction of total current from a curved surface. Modifications to the emission barrier are modeled using a hyperbolic (prolate spheroidal) geometry to determine the trajectories along which the Gamow factor in a WKB-like treatment is undertaken; a quadratic equivalent potential is determined, and a method of shape factors is used to evaluate the corrected total current from a protrusion or wedge geometry.

Cumulative effect of psychosocial factors in youth on ideal cardiovascular health in adulthood: the Cardiovascular Risk in Young Finns Study.

PubMed

Pulkki-Råback, Laura; Elovainio, Marko; Hakulinen, Christian; Lipsanen, Jari; Hintsanen, Mirka; Jokela, Markus; Kubzansky, Laura D; Hintsa, Taina; Serlachius, Anna; Laitinen, Tomi T; Laitinen, Tomi; Pahkala, Katja; Mikkilä, Vera; Nevalainen, Jaakko; Hutri-Kähönen, Nina; Juonala, Markus; Viikari, Jorma; Raitakari, Olli T; Keltikangas-Järvinen, Liisa

2015-01-20

The American Heart Association has defined a new metric of ideal cardiovascular health as part of its 2020 Impact Goals. We examined whether psychosocial factors in youth predict ideal cardiovascular health in adulthood. Participants were 477 men and 612 women from the nationwide Cardiovascular Risk in Young Finns Study. Psychosocial factors were measured from cohorts 3 to 18 years of age at the baseline of the study, and ideal cardiovascular health was examined 27 years later in adulthood. The summary measure of psychosocial factors in youth comprised socioeconomic factors, emotional factors, parental health behaviors, stressful events, self-regulation of the child, and social adjustment of the child. There was a positive association between a higher number of favorable psychosocial factors in youth and greater ideal cardiovascular health index in adulthood (β=0.16; P<0.001) that persisted after adjustment for age, sex, medication use, and cardiovascular risk factors in childhood (β=0.15; P<0.001). The association was monotonic, suggesting that each increment in favorable psychosocial factors was associated with improvement in cardiovascular health. Of the specific psychosocial factors, a favorable socioeconomic environment (β=0.12; P<0.001) and participants' self-regulatory behavior (β=0.07; P=0.004) were the strongest predictors of ideal cardiovascular health in adulthood. The findings suggest a dose-response association between favorable psychosocial factors in youth and cardiovascular health in adulthood, as defined by the American Heart Association metrics. The effect seems to persist throughout the range of cardiovascular health, potentially shifting the population distribution of cardiovascular health rather than simply having effects in a high-risk population. © 2015 American Heart Association, Inc.

Development of a silicon diode detector for skin dosimetry in radiotherapy.

PubMed

Vicoroski, Nikolina; Espinoza, Anthony; Duncan, Mitchell; Oborn, Bradley M; Carolan, Martin; Metcalfe, Peter; Menichelli, David; Perevertaylo, Vladimir L; Lerch, Michael L F; Rosenfeld, Anatoly B; Petasecca, Marco

2017-10-01

The aim of in vivo skin dosimetry was to measure the absorbed dose to the skin during radiotherapy, when treatment planning calculations cannot be relied on. It is of particularly importance in hypo-fractionated stereotactic modalities, where excessive dose can lead to severe skin toxicity. Currently, commercial diodes for such applications are with water equivalent depths ranging from 0.5 to 0.8 mm. In this study, we investigate a new detector for skin dosimetry based on a silicon epitaxial diode, referred to as the skin diode. The skin diode is manufactured on a thin epitaxial layer and packaged using the "drop-in" technology. It was characterized in terms of percentage depth dose, dose linearity, and dose rate dependence, and benchmarked against the Attix ionization chamber. The response of the skin diode in the build-up region of the percentage depth dose (PDD) curve of a 6 MV clinical photon beam was investigated. Geant4 radiation transport simulations were used to model the PDD in order to estimate the water equivalent measurement depth (WED) of the skin diode. Measured output factors using the skin diode were compared with the MOSkin detector and EBT3 film at 10 cm depth and at surface at isocenter of a water equivalent phantom. The intrinsic angular response of the skin diode was also quantified in charge particle equilibrium conditions (CPE) and at the surface of a solid water phantom. Finally, the radiation hardness of the skin diode up to an accumulated dose of 80 kGy using photons from a Co-60 gamma source was evaluated. The PDD curve measured with the skin diode was within 0.5% agreement of the equivalent Geant4 simulated curve. When placed at the phantom surface, the WED of the skin diode was estimated to be 0.075 ± 0.005 mm from Geant4 simulations and was confirmed using the response of a corrected Attix ionization chamber placed at water equivalent depth of 0.075 mm, with the measurement agreement to within 0.3%. The output factor measurements at 10 cm depth were within 2% of those measured with film and the MOSkin detector down to a field size of 2 × 2 cm 2 . The dose-response for all detector samples was linear and with a repeatability within 0.2%. The skin diode intrinsic angular response showed a maximum deviation of 8% at 90 degrees and from 0 to 60 degree is less than 5%. The radiation sensitivity reduced by 25% after an accumulated dose of 20 kGy but after was found to stabilize. At 60 kGy total accumulated dose the response was within 2% of that measured at 20 kGy total accumulated dose. This work characterizes an innovative detector for in vivo and real-time skin dose measurements that is based on an epitaxial silicon diode combined with the Centre for Medical Radiation Physics (CMRP) "drop-in" packaging technology. The skin diode proved to have a water equivalent depth of measurement of 0.075 ± 0.005 mm and the ability to measure doses accurately relative to reference detectors. © 2017 American Association of Physicists in Medicine.

Prevalence of ideal cardiovascular health in European adolescents: The HELENA study.

PubMed

Henriksson, Pontus; Henriksson, Hanna; Gracia-Marco, Luis; Labayen, Idoia; Ortega, Francisco B; Huybrechts, Inge; España-Romero, Vanesa; Manios, Yannis; Widhalm, Kurt; Dallongeville, Jean; González-Gross, Marcela; Marcos, Ascensión; Moreno, Luis A; Castillo, Manuel J; Ruiz, Jonatan R

2017-08-01

The ideal cardiovascular health (iCVH) construct consists of 4 health behaviours and 3 health factors and is strongly related to later cardiovascular disease. However, the prevalence of iCVH in European adolescents is currently unknown. The Healthy Lifestyle in Europe by Nutrition in Adolescence (HELENA) study is a cross-sectional, multicentre study conducted in 9 European countries during 2006-2007 and included 3528 adolescents (1683 boys and 1845 girls) between 12.5 and 17.5years of age. Status (ideal vs. non-ideal) for the health behaviours (smoking status, body mass index, physical activity and diet) and health factors (total cholesterol, blood pressure and fasting glucose) were determined. Overall, the prevalence of ideal health behaviours was low; non-smoking (60.9% ideal), body mass index (76.8%), physical activity (62.1%), and diet (1.7%). The prevalence of ideal health factors was; total cholesterol (65.8%), blood pressure (62.0%) and plasma glucose (88.8%). The low prevalence of iCVH behaviours, especially diet and physical activity, identified in European adolescents is likely to influence later cardiovascular health which strongly motivates efforts to increase ideal health behaviours in this population. Copyright © 2017 Elsevier B.V. All rights reserved.

Exciton confinement in organic dendrimer quantum wells for opto-electronic applications

NASA Astrophysics Data System (ADS)

Lupton, J. M.; Samuel, I. D. W.; Burn, P. L.; Mukamel, S.

2002-01-01

Organic dendrimers are a fascinating new class of materials for opto-electronic applications. We present coupled electronic oscillator calculations on novel nanoscale conjugated dendrimers for use in organic light-emitting diodes. Strong confinement of excitations at the center of the dendrimers is observed, which accounts for the dependence of intermolecular interactions and charge transport on the degree of branching of the dendrimer. The calculated absorption spectra are in excellent agreement with the measured data and show that benzene rings are shared between excitations on the linear segments of the hyperbranched molecules. The coupled electronic oscillator approach is ideally suited to treat large dendritic molecules.

Regenerative memory in time-delayed neuromorphic photonic resonators

NASA Astrophysics Data System (ADS)

Romeira, B.; Avó, R.; Figueiredo, José M. L.; Barland, S.; Javaloyes, J.

2016-01-01

We investigate a photonic regenerative memory based upon a neuromorphic oscillator with a delayed self-feedback (autaptic) connection. We disclose the existence of a unique temporal response characteristic of localized structures enabling an ideal support for bits in an optical buffer memory for storage and reshaping of data information. We link our experimental implementation, based upon a nanoscale nonlinear resonant tunneling diode driving a laser, to the paradigm of neuronal activity, the FitzHugh-Nagumo model with delayed feedback. This proof-of-concept photonic regenerative memory might constitute a building block for a new class of neuron-inspired photonic memories that can handle high bit-rate optical signals.

Heat switch technology for cryogenic thermal management

NASA Astrophysics Data System (ADS)

Shu, Q. S.; Demko, J. A.; E Fesmire, J.

2017-12-01

Systematic review is given of development of novel heat switches at cryogenic temperatures that alternatively provide high thermal connection or ideal thermal isolation to the cold mass. These cryogenic heat switches are widely applied in a variety of unique superconducting systems and critical space applications. The following types of heat switch devices are discussed: 1) magnetic levitation suspension, 2) shape memory alloys, 3) differential thermal expansion, 4) helium or hydrogen gap-gap, 5) superconducting, 6) piezoelectric, 7) cryogenic diode, 8) magneto-resistive, and 9) mechanical demountable connections. Advantages and limitations of different cryogenic heat switches are examined along with the outlook for future thermal management solutions in materials and cryogenic designs.

Does Media Literacy Mitigate Risk for Reduced Body Satisfaction Following Exposure to Thin-Ideal Media?

PubMed

McLean, Siân A; Paxton, Susan J; Wertheim, Eleanor H

2016-08-01

Exposure to thin-ideal media can contribute to increased body dissatisfaction in adolescent girls. Understanding the factors that may prevent or exacerbate the negative effects of media exposure on body dissatisfaction is important to facilitate prevention of these problems. This study evaluated the effects of exposure to thin-ideal media images on body image in three instructional set experimental conditions: appearance comparison, peer norms, and control. An important aim was to examine baseline levels of media literacy as a protective factor and trait thin-ideal internalization and trait upward appearance comparison as risk factors. Early adolescent girls (N = 246) completed baseline measures and 1 week later viewed thin-ideal media images, before and after which they rated their state body satisfaction. Participants in the appearance comparison instruction but not peer norms instruction condition had significantly reduced body satisfaction. Media literacy, particularly high levels of critical thinking, mitigated the negative effects of trait thin-ideal internalization and trait upward appearance comparison on body satisfaction outcomes. These findings provide evidence for the role of media literacy as a protective factor against the negative effects on body satisfaction of exposure to thin-ideal media images, and also provide evidence to support the development and implementation of media literacy-based body image interventions.

Assessment of factors regulating the thermal lens profile and lateral brightness in high power diode lasers

NASA Astrophysics Data System (ADS)

Rieprich, J.; Winterfeldt, M.; Tomm, J.; Kernke, R.; Crump, P.

2017-02-01

The lateral beam parameter product, BPPlat, and resulting lateral brightness of GaAs-based high-power broad-area diode lasers is strongly influenced by the thermal lens profile. We present latest progress in efforts using FEM simulation to interpret how variation in chip construction influences the thermal lens profile, itself determined experimentally using thermography (thermal camera). Important factors are shown to include the vertical (epitaxial) structure, the properties of the submount and the transition between chip and submount, whose behavior is shown to be consistent with the presence of a significant thermal barrier.

Efficient thermal diode with ballistic spacer

NASA Astrophysics Data System (ADS)

Chen, Shunda; Donadio, Davide; Benenti, Giuliano; Casati, Giulio

2018-03-01

Thermal rectification is of importance not only for fundamental physics, but also for potential applications in thermal manipulations and thermal management. However, thermal rectification effect usually decays rapidly with system size. Here, we show that a mass-graded system, with two diffusive leads separated by a ballistic spacer, can exhibit large thermal rectification effect, with the rectification factor independent of system size. The underlying mechanism is explained in terms of the effective size-independent thermal gradient and the match or mismatch of the phonon bands. We also show the robustness of the thermal diode upon variation of the model's parameters. Our finding suggests a promising way for designing realistic efficient thermal diodes.

Off-axis spectral beam combining of Bragg reflection waveguide photonic crystal diode lasers

NASA Astrophysics Data System (ADS)

Sun, Fangyuan; Wang, Lijie; Zhao, Yufei; Hou, Guanyu; Shu, Shili; Zhang, Jun; Peng, Hangyu; Tian, Sicong; Tong, Cunzhu; Wang, Lijun

2018-06-01

The spectral beam combining (SBC) of Bragg reflection waveguide photonic crystal (BRW-PC) diode lasers was studied for the first time. An off-axis feedback system was constructed using a stripe mirror and a spatial filter to control beam quality in the external cavity. It was found that the BRW-PC diode lasers with a low divergence and a circular beam provided a simplified and cost-effective SBC. The off-axis feedback broke the beam quality limit of a single element, and an M 2 factor of 3.8 times lower than that of a single emitter in the slow axis was demonstrated.

Small field detector correction factors: effects of the flattening filter for Elekta and Varian linear accelerators

PubMed Central

Liu, Paul Z.Y.; Lee, Christopher; McKenzie, David R.; Suchowerska, Natalka

2016-01-01

Flattening filter‐free (FFF) beams are becoming the preferred beam type for stereotactic radiosurgery (SRS) and stereotactic ablative radiation therapy (SABR), as they enable an increase in dose rate and a decrease in treatment time. This work assesses the effects of the flattening filter on small field output factors for 6 MV beams generated by both Elekta and Varian linear accelerators, and determines differences between detector response in flattened (FF) and FFF beams. Relative output factors were measured with a range of detectors (diodes, ionization chambers, radiochromic film, and microDiamond) and referenced to the relative output factors measured with an air core fiber optic dosimeter (FOD), a scintillation dosimeter developed at Chris O'Brien Lifehouse, Sydney. Small field correction factors were generated for both FF and FFF beams. Diode measured detector response was compared with a recently published mathematical relation to predict diode response corrections in small fields. The effect of flattening filter removal on detector response was quantified using a ratio of relative detector responses in FFF and FF fields for the same field size. The removal of the flattening filter was found to have a small but measurable effect on ionization chamber response with maximum deviations of less than ±0.9% across all field sizes measured. Solid‐state detectors showed an increased dependence on the flattening filter of up to ±1.6%. Measured diode response was within ±1.1% of the published mathematical relation for all fields up to 30 mm, independent of linac type and presence or absence of a flattening filter. For 6 MV beams, detector correction factors between FFF and FF beams are interchangeable for a linac between FF and FFF modes, providing that an additional uncertainty of up to ±1.6% is accepted. PACS number(s): 87.55.km, 87.56.bd, 87.56.Da PMID:27167280

Neurotrophic keratitis after transscleral diode laser cyclophotocoagulation.

PubMed

Fernández-Vega González, Á; Barraquer Compte, R I; Cárcamo Martínez, A L; Torrico Delgadillo, M; de la Paz, M F

2016-07-01

To study the relationship between treatment with diode laser transscleral cyclophotocoagulation and development a neurotrophic keratitis due to the damage of the sensitive corneal innervation. A study was conducted on 5 eyes of 5 patients who were treated with diode laser transscleral cyclophotocoagulation and soon developed neurotrophic ulcers. Personal characteristics of the patients were collected, as well as refraction and risk factors for corneal hypoesthesia, and the parameters of the laser used in the surgery. It was found that the 5 patients had predisposing factors of corneal hypoesthesia prior to surgery (chronic use of topical beta blockers, surgery with corneal incisions, diabetes mellitus, or corneal dystrophies); however none had developed neurotrophic keratitis until the cyclophotocoagulation was performed. It also showed that 4 of them were highly myopic, and they all were treated with high laser parameters (with an average of 2880 mW for 3s at an average surface of 275°), triggering neurotrophic ulcers between 10 and 35 days after surgery. Neurotrophic keratitis is a rare complication that can occur after diode laser transscleral cyclophotocoagulation, secondary to the damage of the long ciliary nerves. The emergence of this disorder can be triggered by the existence of previous risk factors, including high myopia, thus it is important to respect the recommended treatment parameters to prevent the development of this disorder. Copyright © 2015 Sociedad Española de Oftalmología. Published by Elsevier España, S.L.U. All rights reserved.

Highly Sensitive Switchable Heterojunction Photodiode Based on Epitaxial Bi2FeCrO6 Multiferroic Thin Films.

PubMed

Huang, Wei; Chakrabartty, Joyprokash; Harnagea, Catalin; Gedamu, Dawit; Ka, Ibrahima; Chaker, Mohamed; Rosei, Federico; Nechache, Riad

2018-04-18

Perovskite multiferroic oxides are promising materials for the realization of sensitive and switchable photodiodes because of their favorable band gap (<3.0 eV), high absorption coefficient, and tunable internal ferroelectric (FE) polarization. A high-speed switchable photodiode based on multiferroic Bi 2 FeCrO 6 (BFCO)/SrRuO 3 (SRO)-layered heterojunction was fabricated by pulsed laser deposition. The heterojunction photodiode exhibits a large ideality factor ( n = ∼5.0) and a response time as fast as 68 ms, thanks to the effective charge carrier transport and collection at the BFCO/SRO interface. The diode can switch direction when the electric polarization is reversed by an external voltage pulse. The time-resolved photoluminescence decay of the device measured at ∼500 nm demonstrates an ultrafast charge transfer (lifetime = ∼6.4 ns) in BFCO/SRO heteroepitaxial structures. The estimated responsivity value at 500 nm and zero bias is 0.38 mA W -1 , which is so far the highest reported for any FE thin film photodiode. Our work highlights the huge potential for using multiferroic oxides to fabricate highly sensitive and switchable photodiodes.

Optical Properties and Junction Characteristics of 6-(5-Bromothiohen-2-yl)-2,3-Dihydro-1-Methyl-3-Oxo-2-Phenyl-1 H-Pyrazolo[4,3-b]Pyridine-5-Carbonitrile Films

NASA Astrophysics Data System (ADS)

Zedan, I. T.; El-Taweel, F. M. A.; Abu El-Enein, R. A. N.; Nawar, H. H.; El-Menyawy, E. M.

2016-11-01

In this study, 6-(5-bromothiohen-2-yl)-2,3-dihydro-1-methyl-3-oxo-2-phenyl-1 H-pyrazolo[4,3-b]pyridine-5-carbonitrile (BDPC) powder was synthesized. BDPC powder showed a polycrystalline structure, whereas the thermally evaporated films had an amorphous structure. The optical parameters such as absorption coefficient and refractive index were calculated in the spectral range 200-500 nm. Spectral distribution analysis of the absorption coefficient revealed that the films had an indirect band transitions with energy gaps of 2.57 eV and 3.5 eV. According to the single oscillator model, the oscillation energy, dispersion energy, and dielectric constant were estimated. The room-temperature current-voltage characteristics of the fabricated Au/BDPC/p-Si/Al heterojunction showed diode-like behavior. The ideality factor, the barrier height and series resistance were determined based on thermionic emission theory and Norde's function. At reverse bias, the current was interpreted in terms of the Schottky and pool-Frenkle effects in low and high voltages, respectively. The built-in voltage, carrier concentration and barrier height were obtained using capacitance-voltage characteristics.

Association between cumulative social risk and ideal cardiovascular health in US adults: NHANES 1999-2006.

PubMed

Caleyachetty, Rishi; Echouffo-Tcheugui, Justin B; Muennig, Peter; Zhu, Wenyi; Muntner, Paul; Shimbo, Daichi

2015-07-15

The American Heart Association developed the Life's Simple 7 metric for defining cardiovascular health. Little is known about the association of co-occurring social risk factors on ideal cardiovascular health. Using data on 11,467 adults aged ≥25 years from the National Health and Nutrition Examination Survey 1999-2006, we examined the association between cumulative social risk and ideal cardiovascular health in US adults. A cumulative risk score (range 0 to 3 or 4) was created by summing four social risk factors (low family income, low education level, minority race, and single-living status). Ideal levels for each component in Life's Simple 7 (blood pressure, cholesterol, glucose, BMI, smoking, physical activity, and diet) were used to create an ideal Life's Simple 7 score [0-1 (low), 2, 3, 4, and 5-7 (high)]. Adults with low income (odds ratio [OR]=0.30 [95% CI 0.23-0.39]), low education [0.22 (0.16-0.28)], who are non-white (0.44 [0.36-0.54]) and single-living [0.79 (0.67-0.95)] were less likely to have 5-7 versus 0 ideal Life's Simple 7 scores after adjustment for age and sex. Adults were less likely to attain 5-7 versus 0 ideal Life's Simple 7 scores as exposure to the number of social risk factors increased [OR (95% CI) of 0.58 (0.49-0.68); 0.27 (0.21-0.35); and 0.19 (0.14-0.27) for cumulative social risk scores of 1, 2, and 3 or 4, respectively, each versus 0]. US adults with an increasing number of socially risk factors, were progressively less likely to attain ideal levels of cardiovascular health factors. Copyright © 2015 Elsevier Ireland Ltd. All rights reserved.

Thermal imaging of high power diode lasers subject to back-irradiance

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, C.; Pipe, K. P.; Cao, C.

In this study, CCD-based thermoreflectance imaging and finite element modeling are used to study the two-dimensional (2D) temperature profile of a junction-down broad-area diode laser facet subject to back-irradiance. By determining the temperature rise in the active region (ΔΤAR) at different diode laser optical powers, back-irradiance reflectance levels, and back-irradiance spot locations, we find that ΔΤAR increases by nearly a factor of three when the back-irradiance spot is centered in the absorbing substrate approximately 5 μm away from the active region, a distance roughly equal to half of the back-irradiance spot FWHM (9 μm). This corroborates prior work studying themore » relationship between the back-irradiance spot location and catastrophic optical damage, suggesting a strong thermal basis for reduced laser lifetime in the presence of back-irradiance for diode lasers fabricated on absorbing substrates.« less

High efficiency and broadband acoustic diodes

NASA Astrophysics Data System (ADS)

Fu, Congyi; Wang, Bohan; Zhao, Tianfei; Chen, C. Q.

2018-01-01

Energy transmission efficiency and working bandwidth are the two major factors limiting the application of current acoustic diodes (ADs). This letter presents a design of high efficiency and broadband acoustic diodes composed of a nonlinear frequency converter and a linear wave filter. The converter consists of two masses connected by a bilinear spring with asymmetric tension and compression stiffness. The wave filter is a linear mass-spring lattice (sonic crystal). Both numerical simulation and experiment show that the energy transmission efficiency of the acoustic diode can be improved by as much as two orders of magnitude, reaching about 61%. Moreover, the primary working band width of the AD is about two times of the cut-off frequency of the sonic crystal filter. The cut-off frequency dependent working band of the AD implies that the developed AD can be scaled up or down from macro-scale to micro- and nano-scale.

Thermal imaging of high power diode lasers subject to back-irradiance

DOE PAGES

Li, C.; Pipe, K. P.; Cao, C.; ...

2018-03-07

In this study, CCD-based thermoreflectance imaging and finite element modeling are used to study the two-dimensional (2D) temperature profile of a junction-down broad-area diode laser facet subject to back-irradiance. By determining the temperature rise in the active region (ΔΤAR) at different diode laser optical powers, back-irradiance reflectance levels, and back-irradiance spot locations, we find that ΔΤAR increases by nearly a factor of three when the back-irradiance spot is centered in the absorbing substrate approximately 5 μm away from the active region, a distance roughly equal to half of the back-irradiance spot FWHM (9 μm). This corroborates prior work studying themore » relationship between the back-irradiance spot location and catastrophic optical damage, suggesting a strong thermal basis for reduced laser lifetime in the presence of back-irradiance for diode lasers fabricated on absorbing substrates.« less

Short-wavelength InAlGaAs/AlGaAs quantum dot superluminescent diodes

NASA Astrophysics Data System (ADS)

Liang, De-Chun; An, Qi; Jin, Peng; Li, Xin-Kun; Wei, Heng; Wu, Ju; Wang, Zhan-Guo

2011-10-01

This paper reports the fabrication of J-shaped bent-waveguide superluminescent diodes utilizing an InAlGaAs/AlGaAs quantum dot active region. The emission spectrum of the device is centred at 884 nm with a full width at half maximum of 37 nm and an output power of 18 mW. By incorporating an Al composition into the quantum dot active region, short-wavelength superluminescent diode devices can be obtained. An intersection was found for the light power-injection current curves measured from the straight-waveguide facet and the bent-waveguide facet, respectively. The result is attributed to the conjunct effects of the gain and the additional loss of the bent waveguide. A numerical simulation is performed to verify the qualitative explanation. It is shown that bent waveguide loss is an important factor that affects the output power of J-shaped superluminescent diode devices.

Thermal imaging of high power diode lasers subject to back-irradiance

NASA Astrophysics Data System (ADS)

Li, C.; Pipe, K. P.; Cao, C.; Thiagarajan, P.; Deri, R. J.; Leisher, P. O.

2018-03-01

CCD-based thermoreflectance imaging and finite element modeling are used to study the two-dimensional (2D) temperature profile of a junction-down broad-area diode laser facet subject to back-irradiance. By determining the temperature rise in the active region (ΔΤAR) at different diode laser optical powers, back-irradiance reflectance levels, and back-irradiance spot locations, we find that ΔΤAR increases by nearly a factor of three when the back-irradiance spot is centered in the absorbing substrate approximately 5 μm away from the active region, a distance roughly equal to half of the back-irradiance spot FWHM (9 μm). This corroborates prior work studying the relationship between the back-irradiance spot location and catastrophic optical damage, suggesting a strong thermal basis for reduced laser lifetime in the presence of back-irradiance for diode lasers fabricated on absorbing substrates.

Improvement in reduced-mode (REM) diodes enable 315 W from 105-μm 0.15-NA fiber-coupled modules

NASA Astrophysics Data System (ADS)

Kanskar, M.; Bao, L.; Chen, Z.; Dawson, D.; DeVito, M.; Dong, W.; Grimshaw, M.; Guan, X.; Hemenway, M.; Martinsen, R.; Urbanek, W.; Zhang, S.

2018-02-01

High-power, high-brightness diode lasers have been pursued for many applications including fiber laser pumping, materials processing, solid-state laser pumping, and consumer electronics manufacturing. In particular, 915 nm - and 976 nm diodes are of interest as diode pumps for the kilowatt CW fiber lasers. As a result, there have been many technical thrusts for driving the diode lasers to have both high power and high brightness to achieve high-performance and reduced manufacturing costs. This paper presents our continued progress in the development of high brightness fiber-coupled product platform, nLIGHT element®. In the past decade, the power coupled into a single 105 μm and 0.15 NA fiber has increased by over a factor of ten through improved diode laser brightness and the development of techniques for efficiently coupling multiple emitters. In this paper, we demonstrate further brightness improvement and power-scaling enabled by both the rise in chip brightness/power and the increase in number of chips coupled into a given numerical aperture. We report a new chip technology using x-REM design with brightness as high as 4.3 W/mm-mrad at a BPP of 3 mm-mrad. We also report record 315 W output from a 2×12 nLIGHT element with 105 μm diameter fiber using x-REM diodes and these diodes will allow next generation of fiber-coupled product capable of 250W output power from 105 μm/0.15 NA beam at 915 nm.

Genetic and environmental influences on thin-ideal internalization.

PubMed

Suisman, Jessica L; O'Connor, Shannon M; Sperry, Steffanie; Thompson, J Kevin; Keel, Pamela K; Burt, S Alexandra; Neale, Michael; Boker, Steven; Sisk, Cheryl; Klump, Kelly L

2012-12-01

Current research on the etiology of thin-ideal internalization focuses on psychosocial influences (e.g., media exposure). The possibility that genetic influences also account for variance in thin-ideal internalization has never been directly examined. This study used a twin design to estimate genetic effects on thin-ideal internalization and examine if environmental influences are primarily shared or nonshared in origin. Participants were 343 postpubertal female twins (ages: 12-22 years; M = 17.61) from the Michigan State University Twin Registry. Thin-ideal internalization was assessed using the Sociocultural Attitudes toward Appearance Questionnaire-3. Twin modeling suggested significant additive genetic and nonshared environmental influences on thin-ideal internalization. Shared environmental influences were small and non-significant. Although prior research focused on psychosocial factors, genetic influences on thin-ideal internalization were significant and moderate in magnitude. Research is needed to investigate possible interplay between genetic and nonshared environmental factors in the development of thin-ideal internalization. Copyright © 2012 Wiley Periodicals, Inc.

Dosimetric characteristics of a new unshielded silicon diode and its application in clinical photon and electron beams.

PubMed

Griessbach, Irmgard; Lapp, Markus; Bohsung, Jörg; Gademann, Günther; Harder, Dietrich

2005-12-01

Shielded p-silicon diodes, frequently applied in general photon-beam dosimetry, show certain imperfections when applied in the small photon fields occurring in stereotactic or intensity modulated radiotherapy (IMRT), in electron beams and in the buildup region of photon beam dose distributions. Using as a study object the shielded p-silicon diode PTW 60008, well known for its reliable performance in general photon dosimetry, we have identified these imperfections as effects of electron scattering at the metallic parts of the shielding. In order to overcome these difficulties a new, unshielded diode PTW 60012 has been designed and manufactured by PTW Freiburg. By comparison with reference detectors, such as thimble and plane-parallel ionization chambers and a diamond detector, we could show the absence of these imperfections. An excellent performance of the new unshielded diode for the special dosimetric tasks in small photon fields, electron beams and build-up regions of photon beams has been observed. The new diode also has an improved angular response. However, due to its over-response to low-energy scattered photons, its recommended range of use does not include output factor measurements in large photon fields, although this effect can be compensated by a thin auxiliary lead shield.

Latest developments in resonantly diode-pumped Er:YAG lasers

NASA Astrophysics Data System (ADS)

Kudryashov, Igor; Garbuzov, Dmitri; Dubinskii, Mark

2007-04-01

Significant performance improvement of the Er(0.5%):YAG diode pumped solid state laser (DPSSL) has been achieved by pump diode spectral narrowing via implementation of an external volumetric Bragg grating (VBG). Without spectral narrowing, with a pump path length of 15 mm, only 37% of 1532 nm pump was absorbed. After the VBG spectral narrowing, the absorption of the pumping radiation increased to 62 - 70%. As a result, the incident power threshold was reduced by a factor of 2.5, and the efficiency increased by a factor of 1.7, resulting in a slope efficiency of ~23 - 30%. A maximum of 51 W of CW power was obtained versus 31 W without the pump spectrum narrowing. More than 180 mJ QCW pulse output energy was obtained in a stable-unstable resonator configuration with a beam quality of M2 = 1.3 in the stable direction and M2 = 1.1 in the unstable direction. The measured slope efficiency was 0.138 J/J with a threshold energy of 0.91 J.

Temperature dependent simulation of diamond depleted Schottky PIN diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hathwar, Raghuraj; Dutta, Maitreya; Chowdhury, Srabanti

2016-06-14

Diamond is considered as an ideal material for high field and high power devices due to its high breakdown field, high lightly doped carrier mobility, and high thermal conductivity. The modeling and simulation of diamond devices are therefore important to predict the performances of diamond based devices. In this context, we use Silvaco{sup ®} Atlas, a drift-diffusion based commercial software, to model diamond based power devices. The models used in Atlas were modified to account for both variable range and nearest neighbor hopping transport in the impurity bands associated with high activation energies for boron doped and phosphorus doped diamond.more » The models were fit to experimentally reported resistivity data over a wide range of doping concentrations and temperatures. We compare to recent data on depleted diamond Schottky PIN diodes demonstrating low turn-on voltages and high reverse breakdown voltages, which could be useful for high power rectifying applications due to the low turn-on voltage enabling high forward current densities. Three dimensional simulations of the depleted Schottky PIN diamond devices were performed and the results are verified with experimental data at different operating temperatures.« less

Laser diode pumped, erbium-doped, solid state laser with high slope efficiency

NASA Astrophysics Data System (ADS)

Esterowitz, Leon; Allen, R.; Kintz, G.

1989-10-01

A laser and method for producing a laser emission at a wavelength of substantially 2.8 microns is disclosed. In a preferred embodiment of the invention, the laser comprises laser diode means for emitting a pump beam at a preselected wavelength; and a crystal having a preselected host material doped with a predetermined percent concentration of erbium activator ions sufficient to produce a laser emission at substantially 2.8 microns at a slope efficiency of at least 5 percent, but preferrably 10 percent, when the crystal is pumped by the pump beam. It is well known that the human body is comprised of approximately 70 percent water, with various human tissues containing about 60 to 90 percent of water, and bone and cartilage containing about 30 to 40 percent of water. Since the 2.8 micron wavelength has a substantially maximum absorption in water, this 2.8 micron wavelength is the ideal wavelength to use for a large variety of medical laser applications on the human body. A 2.8 micron wavelength laser could be used for precise surgery in such exemplary applications as brain surgery, neurosurgery, eye surgery, plastic surgery, burn treatment, and the removal of malignancies.

Blocking Energy-Loss Pathways for Ideal Fluorescent Organic Light-Emitting Diodes with Thermally Activated Delayed Fluorescent Sensitizers.

PubMed

Zhang, Dongdong; Song, Xiaozeng; Cai, Minghan; Duan, Lian

2018-02-01

Organic light-emitting diodes (OLEDs) based on thermally activated delayed fluorescence-sensitized fluorescence (TSF) offer the possibility of attaining an ultimate high efficiency with low roll-off utilizing noble-metal free, easy-to-synthesize, pure organic fluorescent emitters. However, the performances of TSF-OLEDs are still unsatisfactory. Here, TSF-OLEDs with breakthrough efficiencies even at high brightnesses by suppressing the competitive deactivation processes, including direct charge recombination on conventional fluorescent dopants (CFDs) and Dexter energy transfer from the host to the CFDs, are demonstrated. On the one hand, electronically inert terminal-substituents are introduced to protect the electronically active core of the CFDs; on the other hand, delicate device structures are designed to provide multiple energy-funneling paths. As a result, unprecedentedly high maximum external quantum efficiency/power efficiency of 24%/71.4 lm W -1 in a green TSF-OLED are demonstrated, which remain at 22.6%/52.3 lm W -1 even at a high luminance of 5000 cd m -2 . The work unlocks the potential of TSF-OLEDs, paving the way toward practical applications. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Chiral photonic crystals with an anisotropic defect layer.

PubMed

Gevorgyan, A H; Harutyunyan, M Z

2007-09-01

In the present paper we consider some properties of defect modes in chiral photonic crystals with an anisotropic defect layer. We solved the problem by Ambartsumian's layer addition method. We investigated the influence of the defect layer thickness variation and its location in the chiral photonic crystal (CPC) and also its optical axes orientation, as well as of CPC thickness variation on defect mode properties. Variations of the optical thickness of the defect layer have its impact on the defect mode linewidth and the light accumulation in the defect. We obtain that CPCs lose their base property at certain defect layer thicknesses; namely, they lose their diffraction reflection dependence on light polarization. We also show that the circular polarization handedness changes from right-handed to left-handed if the defect layer location is changed, and therefore, such systems can be used to create sources of elliptically polarized light with tunable ellipticity. Some nonreciprocity properties of such systems are investigated, too. In particular, it is also shown that such a system can work as a practically ideal wide band optical diode for circularly polarized incident light provided the defect layer thickness is properly chosen, and it can work as a narrow band diode at small defect layer thicknesses.

Global Model for Asymmetric, Diode-Type Dual Frequency Capacitive Discharge

NASA Astrophysics Data System (ADS)

Kim, Jisoo; Lieberman, M. A.; Lichtenberg, A. J.

2003-10-01

Dual frequency capacitive reactors can have desirable properties for dielectric etch: low cost, robust uniformity over large areas, and control of dissociation. In the ideal case, the high frequency power controls the plasma density (ion flux) and the low frequency voltage controls the ion bombarding energy. Typical operating conditions are: discharge radius 15-30 cm, length 1-3 cm, pressure 30-200 mTorr, high frequency 27.1-160 MHz, low frequency 2-13.6 MHz, and powers of 500-3000 W for both high and low frequencies. The decoupling of the high and low frequencies is an important feature of dual frequency capacitive discharges. In this work, we describe a global (volume-averaged) model having different top and bottom plate areas that incorporates particle balance, and ohmic and stochastic heating for high and low frequencies. The model is used to obtain the decoupling of high and low frequencies and to investigate limitations to ideal decoupling. Support provided by Lam Research, NSF Grant ECS-0139956, California industries, and UC-SMART Contract SM99-10051.

Optically-Switched Resonant Tunneling Diodes for Space-Based Optical Communication Applications

NASA Technical Reports Server (NTRS)

Moise, T. S.; Kao, Y. -C.; Jovanovic, D.; Sotirelis, P.

1995-01-01

We are developing a new type of digital photo-receiver that has the potential to perform high speed optical-to-electronic conversion with a factor of 10 reduction in component count and power dissipation. In this paper, we describe the room-temperature photo-induced switching of this InP-based device which consists of an InGaAs/AlAs resonant tunneling diode integrated with an InGaAs absorber layer. When illuminated at an irradiance of greater than 5 Wcm(exp -2) using 1.3 micromillimeter radiation, the resonant tunneling diode switches from a high-conductance to a low-conductance electrical state and exhibits a voltage swing of up to 800 mV.

Determination of the effective refractive index spectrum of a quantum-well semiconductor laser diode from the measured modal gain spectrum

NASA Astrophysics Data System (ADS)

Wu, Linzhang; Tian, Wei; Gao, Feng

2004-09-01

This paper presents a self-consistent method to directly determine the effective refractive-index spectrum of a semiconductor quantum-well (QW) laser diode from the measured modal gain spectrum for a given current. The dispersion spectra of the optical waveguide confinement factor and the strongly carrier-density-dependent refractive index of the QW active layer of the test laser are also accurately obtained. The experimental result from a single QW GaInP/AlGaInP laser diode, which has 6 nm thick compressively strained Ga0.4InP active layer sandwiched by two 80 nm thick Al0.33GaInP, is presented.

Evaluation of the Gafchromic{sup Registered-Sign} EBT2 film for the dosimetry of radiosurgical beams

DOE Office of Scientific and Technical Information (OSTI.GOV)

Larraga-Gutierrez, Jose M.; Garcia-Hernandez, Diana; Garcia-Garduno, Olivia A.

2012-10-15

Purpose: Radiosurgery uses small fields and high-radiation doses to treat intra- and extracranial lesions in a single session. The lack of a lateral electronic equilibrium and the presence of high-dose gradients in these fields are challenges for adequate measurements. The availability of radiation detectors with the high spatial resolution required is restricted to only a few. Stereotactic diodes and EBT radiochromic films have been demonstrated to be good detectors for small-beam dosimetry. Because the stereotactic diode is the standard measurement for the dosimetry of radiosurgical beams, the goal of this work was to perform measurements with the radiochromic film Gafchromic{supmore » Registered-Sign} EBT2 and compare its results with a stereotactic diode. Methods: Total scatter factors, tissue maximum, and off-axis ratios from a 6 MV small photon beams were measured using EBT2 radiochromic film in a water phantom. The film-measured data were evaluated by comparing it with the data measured with a stereotactic field diode (IBA-Dosimetry). Results: The film and diode measurements had excellent agreement. The differences between the detectors were less than or equal to 2.0% for the tissue maximum and the off-axis ratios. However, for the total scatter factors, there were significant differences, up to 4.9% (relative to the reference field), for field sizes less than 1.0 cm. Conclusions: This work found that the Gafchromic{sup Registered-Sign} EBT2 film is adequate for small photon beam measurements, particularly for tissue maximum and off-axis ratios. However, careful attention must be taken when measuring output factors of small beams below 1.0 cm due to the film's energy dependence. The measurement differences may be attributable to the film's active layer composition because EBT2 incorporates higher Z elements (i.e., bromide and potassium), hence revealing a potential energy dependence for the dosimetry of small photon beams.« less

Expansion-matched passively cooled heatsinks with low thermal resistance for high-power diode laser bars

NASA Astrophysics Data System (ADS)

Leers, Michael; Scholz, Christian; Boucke, Konstantin; Poprawe, Reinhart

2006-02-01

The lifetime of high-power diode lasers, which are cooled by standard copper heatsinks, is limited. The reasons are the aging of the indium solder normally employed as well as the mechanical stress caused by the mismatch between the copper heatsink (16 - 17ppm/K) and the GaAs diode laser bars (6 - 7.5 ppm/K). For micro - channel heatsinks corrosion and erosion of the micro channels limit the lifetime additionally. The different thermal behavior and the resulting stress cannot be compensated totally by the solder. Expansion matched heatsink materials like tungsten-copper or aluminum nitride reduce this stress. A further possible solution is a combination of copper and molybdenum layers, but all these materials have a high thermal resistance in common. For high-power electronic or low cost medical applications novel materials like copper/carbon compound, compound diamond or high-conductivity ceramics were developed during recent years. Based on these novel materials, passively cooled heatsinks are designed, and thermal and mechanical simulations are performed to check their properties. The expansion of the heatsink and the induced mechanical stress between laser bar and heatsink are the main tasks for the simulations. A comparison of the simulation with experimental results for different material combinations illustrates the advantages and disadvantages of the different approaches. Together with the boundary conditions the ideal applications for packaging with these materials are defined. The goal of the development of passively-cooled expansion-matched heatsinks has to be a long-term reliability of several 10.000h and a thermal resistance below 1 K/W.

A comment on the dependence of LED’s efficiency on the junction ideality factor

NASA Astrophysics Data System (ADS)

Sethi, Anubhav; Gupta, Yashika; Arun, P.

2018-05-01

P–n junctions form the basic building blocks for any semiconductor device. Therefore, the complete understanding of the junction characteristics is very important. Although being a widely discussed topic in electronics, there are still some gaps such as finding the value and significance of the junction ideality factor, that needs to be addressed. In this article we have discussed the problems faced while extracting the ideality factor from the I–V characteristics of a p–n LED and its significance in device performance.

Sidewall GaAs tunnel junctions fabricated using molecular layer epitaxy

PubMed Central

Ohno, Takeo; Oyama, Yutaka

2012-01-01

In this article we review the fundamental properties and applications of sidewall GaAs tunnel junctions. Heavily impurity-doped GaAs epitaxial layers were prepared using molecular layer epitaxy (MLE), in which intermittent injections of precursors in ultrahigh vacuum were applied, and sidewall tunnel junctions were fabricated using a combination of device mesa wet etching of the GaAs MLE layer and low-temperature area-selective regrowth. The fabricated tunnel junctions on the GaAs sidewall with normal mesa orientation showed a record peak current density of 35 000 A cm-2. They can potentially be used as terahertz devices such as a tunnel injection transit time effect diode or an ideal static induction transistor. PMID:27877466

Novel hole transport materials for organic light emitting devices

NASA Astrophysics Data System (ADS)

Shi, Jianmin; Forsythe, Eric; Morton, David

2008-08-01

Organic electronic devices generally have a layered structure with organic materials sandwiched between an anode and a cathode, such organic electronic devices of organic light-emitting diode (OLED), organic photovoltaic (OPV), organic thin-film transistor (OTFT). There are many advantages of these organic electronic devices as compared to silicon-based devices. However, one of key challenge for an organic electronic device is to minimize the charge injection barrier from electrodes to organic materials and improve the charge transport mobility. In order to overcome these circumstances, there are many approaches including, designing organic materials with minimum energy barriers and improving charge transport mobility. Ideally organic materials or complex with Ohmic contact will be the most desired.

Solid-state X-band Combiner Study

NASA Technical Reports Server (NTRS)

Pitzalis, O., Jr.; Russell, K. J.

1979-01-01

The feasibility of developing solid-state amplifiers at 4 and 10 GHz for application in spacecraft altimeters was studied. Bipolar-transistor, field-effect-transistor, and Impatt-diode amplifier designs based on 1980 solid-state technology are investigated. Several output power levels of the pulsed, low-duty-factor amplifiers are considered at each frequency. Proposed transistor and diode amplifier designs are illustrated in block diagrams. Projections of size, weight, and primary power requirements are given for each design.

SU-F-T-322: A Comparison of Two Si Detectors for in Vivo Dosimetry

DOE Office of Scientific and Technical Information (OSTI.GOV)

Talarico, O; Krylova, T; Lebedenko, I

Purpose: To compare two types of semiconductor detectors for in vivo dosimetry by their dependence from various parameters in different conditions. Methods: QED yellow (Sun Nuclear) and EDP (Scanditronix) Si detectors were radiated by a Varian Clinac 2300 ix with 6 and 18 MV energies. 10 cm thickness water equivalent phantom consisted of 30×30 cm{sup 2} squared plates was used for experiments. Dose dependencies for different beam angles (0 – 180°), field size (3–40 cm), dose (50 – 300 MU), and dose rates (50 – 300 MU/min) were obtained and calibrated with Standard Farmer chamber (PTW). Results: Reproducibility, linearity, dosemore » rate, angular dependence, and field size dependence were obtained for QED and EDP. They show no dose-rate dependence in available clinical dose rate range (100–600 MU/min). Both diodes have linear dependence with increasing the dose. Therefore even in case of high radiation therapy (including total body irradiation) it is not necessary to apply an additional correction during in vivo dosimetry. The diodes have different behavior for angular and field size dependencies. QED diode showed that dose value is stable for beam angles from 0 to 60°, for 60–180° correction factor has to be applied for each beam angle during in vivo measurements. For EDP diode dose value is sensitive to beam angle in whole range of angles. Conclusion: The study shows that QED diode is more suitable for in vivo dosimetry due to dose value independence from incident beam angle in the range 0–60°. There is no need in correction factors for increasing of dose and dose rate for both diodes. The next step will be to carry out measurements in non-standard conditions of total body irradiation. After this modeling of these experiments with Monte Carlo simulation for comparison calculated and obtained data is planned.« less

Measurement of Total Scatter Factor for Stereotactic Cones with Plastic Scintillation Detector

PubMed Central

Chaudhari, Suresh H; Dobhal, Rishabh; Kinhikar, Rajesh A.; Kadam, Sudarshan S.; Deshpande, Deepak D.

2017-01-01

Advanced radiotherapy modalities such as stereotactic radiosurgery (SRS) and image-guided radiotherapy may employ very small beam apertures for accurate localized high dose to target. Accurate measurement of small radiation fields is a well-known challenge for many dosimeters. The purpose of this study was to measure total scatter factors for stereotactic cones with plastic scintillation detector and its comparison against diode detector and theoretical estimates. Measurements were performed on Novalis Tx™ linear accelerator for 6MV SRS beam with stereotactic cones of diameter 6 mm, 7.5 mm, 10 mm, 12.5 mm, and 15 mm. The advantage of plastic scintillator detector is in its energy dependence. The total scatter factor was measured in water at the depth of dose maximum. Total scatter factor with plastic scintillation detector was determined by normalizing the readings to field size of 10 cm × 10 cm. To overcome energy dependence of diode detector for the determination of scatter factor with diode detector, daisy chaining method was used. The plastic scintillator detector was calibrated against the ionization chamber, and the reproducibility in the measured doses was found to be within ± 1%. Total scatter factor measured with plastic scintillation detector was 0.728 ± 0.3, 0.783 ± 0.05, 0.866 ± 0.55, 0.885 ± 0.5, and 0.910 ± 0.06 for cone sizes of 6 mm, 7.5 mm, 10 mm, 12.5 mm, and 15 mm, respectively. Total scatter factor measured with diode detector was 0.733 ± 0.03, 0.782 ± 0.02, 0.834 ± 0.07, 0.854 ± 0.02, and 0.872 ± 0.02 for cone sizes of 6 mm, 7.5 mm, 10 mm, 12.5 mm, and 15 mm, respectively. The variation in the measurement of total scatter factor with published Monte Carlo data was found to be −1.3%, 1.9%, −0.4%, and 0.4% for cone sizes of 7.5 mm, 10 mm, 12.5 mm, and 15 mm, respectively. We conclude that total scatter factor measurements for stereotactic cones can be adequately carried out with a plastic scintillation detector. Our results show a high level of consistency within our data and compared well with published data. PMID:28405102

Measurement of Total Scatter Factor for Stereotactic Cones with Plastic Scintillation Detector.

PubMed

Chaudhari, Suresh H; Dobhal, Rishabh; Kinhikar, Rajesh A; Kadam, Sudarshan S; Deshpande, Deepak D

2017-01-01

Advanced radiotherapy modalities such as stereotactic radiosurgery (SRS) and image-guided radiotherapy may employ very small beam apertures for accurate localized high dose to target. Accurate measurement of small radiation fields is a well-known challenge for many dosimeters. The purpose of this study was to measure total scatter factors for stereotactic cones with plastic scintillation detector and its comparison against diode detector and theoretical estimates. Measurements were performed on Novalis Tx ™ linear accelerator for 6MV SRS beam with stereotactic cones of diameter 6 mm, 7.5 mm, 10 mm, 12.5 mm, and 15 mm. The advantage of plastic scintillator detector is in its energy dependence. The total scatter factor was measured in water at the depth of dose maximum. Total scatter factor with plastic scintillation detector was determined by normalizing the readings to field size of 10 cm × 10 cm. To overcome energy dependence of diode detector for the determination of scatter factor with diode detector, daisy chaining method was used. The plastic scintillator detector was calibrated against the ionization chamber, and the reproducibility in the measured doses was found to be within ± 1%. Total scatter factor measured with plastic scintillation detector was 0.728 ± 0.3, 0.783 ± 0.05, 0.866 ± 0.55, 0.885 ± 0.5, and 0.910 ± 0.06 for cone sizes of 6 mm, 7.5 mm, 10 mm, 12.5 mm, and 15 mm, respectively. Total scatter factor measured with diode detector was 0.733 ± 0.03, 0.782 ± 0.02, 0.834 ± 0.07, 0.854 ± 0.02, and 0.872 ± 0.02 for cone sizes of 6 mm, 7.5 mm, 10 mm, 12.5 mm, and 15 mm, respectively. The variation in the measurement of total scatter factor with published Monte Carlo data was found to be -1.3%, 1.9%, -0.4%, and 0.4% for cone sizes of 7.5 mm, 10 mm, 12.5 mm, and 15 mm, respectively. We conclude that total scatter factor measurements for stereotactic cones can be adequately carried out with a plastic scintillation detector. Our results show a high level of consistency within our data and compared well with published data.

Small field detector correction factors kQclin,Qmsr (fclin,fmsr) for silicon-diode and diamond detectors with circular 6 MV fields derived using both empirical and numerical methods.

PubMed

O'Brien, D J; León-Vintró, L; McClean, B

2016-01-01

The use of radiotherapy fields smaller than 3 cm in diameter has resulted in the need for accurate detector correction factors for small field dosimetry. However, published factors do not always agree and errors introduced by biased reference detectors, inaccurate Monte Carlo models, or experimental errors can be difficult to distinguish. The aim of this study was to provide a robust set of detector-correction factors for a range of detectors using numerical, empirical, and semiempirical techniques under the same conditions and to examine the consistency of these factors between techniques. Empirical detector correction factors were derived based on small field output factor measurements for circular field sizes from 3.1 to 0.3 cm in diameter performed with a 6 MV beam. A PTW 60019 microDiamond detector was used as the reference dosimeter. Numerical detector correction factors for the same fields were derived based on calculations from a geant4 Monte Carlo model of the detectors and the Linac treatment head. Semiempirical detector correction factors were derived from the empirical output factors and the numerical dose-to-water calculations. The PTW 60019 microDiamond was found to over-respond at small field sizes resulting in a bias in the empirical detector correction factors. The over-response was similar in magnitude to that of the unshielded diode. Good agreement was generally found between semiempirical and numerical detector correction factors except for the PTW 60016 Diode P, where the numerical values showed a greater over-response than the semiempirical values by a factor of 3.7% for a 1.1 cm diameter field and higher for smaller fields. Detector correction factors based solely on empirical measurement or numerical calculation are subject to potential bias. A semiempirical approach, combining both empirical and numerical data, provided the most reliable results.

Value-based HR practices, i-deals and clinical error control with CSR as a moderator.

PubMed

Luu, Tuan; Rowley, Chris; Siengthai, Sununta; Thanh Thao, Vo

2017-05-08

Purpose Notwithstanding the rising magnitude of system factors in patient safety improvement, "human factors" such as idiosyncratic deals (i-deals) which also contribute to the adjustment of system deficiencies should not be neglected. The purpose of this paper is to investigate the role of value-based HR practices in catalyzing i-deals, which then influence clinical error control. The research further examines the moderating role of corporate social responsibility (CSR) on the effect of value-based HR practices on i-deals. Design/methodology/approach The data were collected from middle-level clinicians from hospitals in the Vietnam context. Findings The research results confirmed the effect chain from value-based HR practices through i-deals to clinical error control with CSR as a moderator. Originality/value The HRM literature is expanded through enlisting i-deals and clinical error control as the outcomes of HR practices.

Competitiveness as a moderator of the relation between appearance-related factors and disordered eating behaviors.

PubMed

Schleien, Jenna L; Bardone-Cone, Anna M

2016-06-01

The present study examined competitiveness as a moderator of the relationships between appearance-related factors (i.e., thin-ideal internalization, appearance contingent self-worth) and disordered eating behaviors (i.e., dieting, excessive exercise). Participants were 441 undergraduate females for cross-sectional analyses, with 237 also contributing data longitudinally, 1 year later. Results showed that, in a model including thin-ideal internalization and appearance contingent self-worth and their interactions with competitiveness, thin-ideal internalization (but not appearance contingent self-worth) interacted with competitiveness to identify concurrent levels of both dieting and excessive exercise. Individuals high in both thin-ideal internalization and competitiveness exhibited the highest levels of concurrent dieting and excessive exercise. After controlling for baseline levels of the dependent variables, neither appearance-related factor interacted with competitiveness to predict dieting or excessive exercise. These findings suggest that individuals who are both competitive and accept and strive to achieve the thin ideal may be at risk for disordered eating behaviors. Copyright © 2016 Elsevier Ltd. All rights reserved.

760nm: a new laser diode wavelength for hair removal modules

NASA Astrophysics Data System (ADS)

Wölz, Martin; Zorn, Martin; Pietrzak, Agnieszka; Kindsvater, Alex; Meusel, Jens; Hülsewede, Ralf; Sebastian, Jürgen

2015-02-01

A new high-power semiconductor laser diode module, emitting at 760 nm is introduced. This wavelength permits optimum treatment results for fair skin individuals, as demonstrated by the use of Alexandrite lasers in dermatology. Hair removal applications benefit from the industry-standard diode laser design utilizing highly efficient, portable and light-weight construction. We show the performance of a tap-water-cooled encapsulated laser diode stack with a window for use in dermatological hand-pieces. The stack design takes into account the pulse lengths required for selectivity in heating the hair follicle vs. the skin. Super-long pulse durations place the hair removal laser between industry-standard CW and QCW applications. The new 760 nm laser diode bars are 30% fill factor devices with 1.5 mm long resonator cavities. At CW operation, these units provide 40 W of optical power at 43 A with wall-plug-efficiency greater than 50%. The maximum output power before COMD is 90 W. Lifetime measurements starting at 40 W show an optical power loss of 20% after about 3000 h. The hair removal modules are available in 1x3, 1x8 and 2x8 bar configurations.

Diode pumped Nd:YAG laser development

NASA Technical Reports Server (NTRS)

Reno, C. W.; Herzog, D. G.

1976-01-01

A low power Nd:YAG laser was constructed which employs GaAs injection lasers as a pump source. Power outputs of 125 mW TEM CW with the rod at 250 K and the pump at 180 K were achieved for 45 W input power to the pump source. Operation of the laser, with array and laser at a common heat sink temperature of 250 K, was inhibited by difficulties in constructing long-life GaAs LOC laser arrays. Tests verified pumping with output power of 20 to 30 mW with rod and pump at 250 K. Although life tests with single LOC GaAs diodes were somewhat encouraging (with single diodes operating as long as 9000 hours without degradation), failures of single diodes in arrays continue to occur, and 50 percent power is lost in a few hundred hours at 1 percent duty factor. Because of the large recent advances in the state of the art of CW room temperature AlGaAs diodes, their demonstrated lifetimes of greater than 5,000 hours, and their inherent advantages for this task, it is recommended that these sources be used for further CW YAG injection laser pumping work.

Electromagnetic diode based on photonic crystal cavity with embedded highly dispersive meta-interface

NASA Astrophysics Data System (ADS)

Chen, Yongqiang; Dong, Lijuan; Xu, Xiaohu; Jiang, Jun; Shi, Yunlong

2017-12-01

In this paper, we propose a scheme for subwavelength electromagnetic diodes by employing a photonic crystal (PC) cavity with embedded electromagnetically induced-transparency (EIT)-like highly dispersive meta-interface. A nonreciprocal response, with 21.5 dB transmission light contrast and 12.3 dBm working power, is conceptually demonstrated in a microstrip transmission line system with asymmetric absorption and nonlinear medium inclusion. Such high-contrast transmission and relatively low-threshold diode action stem from the composite PC-EIT mechanism. This mechanism not only possesses a large quality factor and strong localization of fields but also does not enlarge the device volume and drastically reduce transmittance. Our findings should be beneficial for the design of new and practical metamaterial-enabled nonlinear devices.

Socioeconomic status and parenting during adolescence in relation to ideal cardiovascular health in Black and White men.

PubMed

Matthews, Karen A; Boylan, Jennifer M; Jakubowski, Karen P; Cundiff, Jenny M; Lee, Laisze; Pardini, Dustin A; Jennings, J Richard

2017-07-01

American Heart Association (AHA) developed a new metric to evaluate ideal cardiovascular health based on optimal levels of 7 cardiovascular risk factors and health behaviors. We evaluated the relationships of parenting characteristics and academic achievement in adolescence in relation to ideal cardiovascular health in midlife men. We measured cardiovascular risk factors in 171 Black and 136 White men and their ideal cardiovascular health score was constructed based on AHA guidelines. When the participants were 13-16 years old, annual measures of parent-child communication, positive relationship, parental monitoring, family cohesion, boys' involvement in family activities, and academic achievement were recorded and averaged. Confirmatory factor analysis of adolescent parenting measures revealed a single Parenting Composite. Multiple linear regressions showed a significant Race by Parenting Composite interaction term, β = -.19, p = .03; better parenting was significantly related to more ideal cardiovascular health in Blacks only, β = -.23, p = .004, which remained after adjustments for adolescent and adult socioeconomic status (SES). Academic achievement was related to ideal cardiovascular health, β = -.13, but was no longer significant after controls for adult SES. Adult SES was a strong correlate of ideal cardiovascular health in Black and White men. Black men exposed to positive parenting during adolescence had more ideal cardiovascular health based on AHA guidelines. Improving academic achievement in adolescence may indirectly benefit adult cardiovascular health through improving adult SES. This is the first study of adolescent family predictors of the extent of ideal cardiovascular health. (PsycINFO Database Record (c) 2017 APA, all rights reserved).

Handgrip Strength and Ideal Cardiovascular Health among Colombian Children and Adolescents.

PubMed

Ramírez-Vélez, Robinson; Tordecilla-Sanders, Alejandra; Correa-Bautista, Jorge Enrique; Peterson, Mark D; Garcia-Hermoso, Antonio

2016-12-01

To evaluate the association between handgrip strength and ideal cardiovascular health (CVH) in Colombian children and adolescents. During the 2014-2015 school years, we examined a cross-sectional component of the FUPRECOL (Association for Muscular Strength with Early Manifestation of Cardiovascular Disease Risk Factors among Colombian Children and Adolescents) study. Participants included 1199 (n = 627 boys) youths from Bogota (Colombia). Handgrip strength was measured with a standard adjustable hand held dynamometer and expressed relative to body mass (handgrip/body mass) and as absolute values in kilograms. Ideal CVH, as defined by the American Heart Association, was determined as meeting ideal levels of the following components: 4 behaviors (smoking status, body mass index, cardiorespiratory fitness, and diet) and 3 factors (total cholesterol, blood pressure, and glucose). Higher levels of handgrip strength (both absolute and relative values) were associated with a higher frequency of ideal CVH metrics in both sexes (P for trend ≤ .001). Also, higher levels of handgrip strength were associated with a greater number of ideal health behaviors (P for trend < .001 in both boys and girls), and with a higher number of ideal health factors in boys (P for trend < .001). Finally, levels of handgrip strength were similar between ideal versus nonideal glucose or total cholesterol groups in girls. Handgrip strength was strongly associated with ideal CVH in Colombian children and adolescents, and thus supports the relevance of early targeted interventions to promote strength adaptation and preservation as part of primordial prevention. Copyright © 2016 Elsevier Inc. All rights reserved.

Effect of Mg doping in ZnO buffer layer on ZnO thin film devices for electronic applications

NASA Astrophysics Data System (ADS)

Giri, Pushpa; Chakrabarti, P.

2016-05-01

Zinc Oxide (ZnO) thin films have been grown on p-silicon (Si) substrate using magnesium doped ZnO (Mg: ZnO) buffer layer by radio-frequency (RF) sputtering method. In this paper, we have optimized the concentration of Mg (0-5 atomic percent (at. %)) ZnO buffer layer to examine its effect on ZnO thin film based devices for electronic and optoelectronic applications. The crystalline nature, morphology and topography of the surface of the thin film have been characterized. The optical as well as electrical properties of the active ZnO film can be tailored by varying the concentration of Mg in the buffer layer. The crystallite size in the active ZnO thin film was found to increase with the Mg concentration in the buffer layer in the range of 0-3 at. % and subsequently decrease with increasing Mg atom concentration in the ZnO. The same was verified by the surface morphology and topography studies carried out with scanning electron microscope (SEM) and atomic electron microscopy (AFM) respectively. The reflectance in the visible region was measured to be less than 80% and found to decrease with increase in Mg concentration from 0 to 3 at. % in the buffer region. The optical bandgap was initially found to increase from 3.02 eV to 3.74 eV by increasing the Mg content from 0 to 3 at. % but subsequently decreases and drops down to 3.43 eV for a concentration of 5 at. %. The study of an Au:Pd/ZnO Schottky diode reveals that for optimum doping of the buffer layer the device exhibits superior rectifying behavior. The barrier height, ideality factor, rectification ratio, reverse saturation current and series resistance of the Schottky diode were extracted from the measured current voltage (I-V) characteristics.

Study on electrical properties of metal/GaSb junctions using metal-GaSb alloys

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nishi, Koichi, E-mail: nishi@mosfet.t.u-tokyo.ac.jp; Yokoyama, Masafumi; Kim, Sanghyeon

2014-01-21

We study the metal-GaSb alloy formation, the structural properties and the electrical characteristics of the metal-alloy/GaSb diodes by employing metal materials such as Ni, Pd, Co, Ti, Al, and Ta, in order to clarify metals suitable for GaSb p-channel metal-oxide-semiconductor field-effect transistors (pMOSFETs) as metal-GaSb alloy source/drain (S/D). It is found that Ni, Pd, Co, and Ti can form alloy with GaSb by rapid thermal annealing at 250, 250, 350, and 450 °C, respectively. The Ni-GaSb and Pd-GaSb alloy formation temperature of 250 °C is lower than the conventional dopant activation annealing for ion implantation, which enable us to lower the processmore » temperature. The alloy layers show lower sheet resistance (R{sub Sheet}) than that of p{sup +}-GaSb layer formed by ion implantation and activation annealing. We also study the electrical characteristics of the metal-alloy/GaSb junctions. The alloy/n-GaSb contact has large Schottky barrier height (ϕ{sub B}) for electrons, ∼0.6 eV, and low ϕ{sub B} for holes, ∼0.2 eV, which enable us to realize high on/off ratio in pMOSFETs. We have found that the Ni-GaSb/GaSb Schottky junction shows the best electrical characteristics with ideal factor (n) of 1.1 and on-current/off-current ratio (I{sub on}/I{sub off}) of ∼10{sup 4} among the metal-GaSb alloy/GaSb junctions evaluated in the present study. These electrical properties are also superior to those of a p{sup +}-n diode fabricated by Be ion implantation with activation annealing at 350 °C. As a result, the Ni-GaSb alloy can be regarded as one of the best materials to realize metal S/D in GaSb pMOSFETs.« less

Cumulative effect of reproductive factors on ideal cardiovascular health in postmenopausal women: a cross-sectional study in central south China.

PubMed

Cao, Xia; Zhou, Jiansong; Yuan, Hong; Chen, Zhiheng

2015-12-21

The American Heart Association developed the Life's Simple 7 metric for defining cardiovascular health. Little is known, however, whether co-occurring reproductive factors, which affects endogenous oestrogen levels during a woman's life, also influences ideal cardiovascular health in postmenopausal women. Using data on a cross-sectional study with a convenience sample of 1,625 postmenopausal women (median age, 60.0 years) in a medical health checkup program at a general hospital in central south China 2013-2014, we examined the association between cumulative reproductive risk and ideal cardiovascular health in postmenopausal women. A cumulative risk score (range 0 to 4) was created by summing four reproductive risk factors (age at menarche, age at menopause, number of children, and pregnancy losses) present in each individual from binary variables in which 0 stands for favorable and 1 for less-than-favorable level. Ideal levels for each component in Life's Simple 7 (blood pressure, cholesterol, glucose, BMI, smoking, physical activity, and diet) were used to create an ideal Life's Simple 7 score [0-1 (low), 2, 3, 4, 5 and 6-7 (high)]. Participants with earlier age at menarche (odds ratio [OR] =0.42 [95 % CI 0.26-0.48]), earlier age at menopause [0.46 (0.32-0.58)], who have more than three children (0.42 [0.38-0.56]) and have history of pregnancy losses [0.76 (0.66-0.92)] were more likely to attain low (0-1) ideal Life's Simple 7 after adjustment for age. Participants were more likely to attain low (0-1) ideal Life's Simple 7 as exposure to the number of reproductive risk factors increased [OR (95 % CI) of 0.52 (0.42-0.66), 0.22 (0.16-0.26), and 0.16 (0.12-0.22) for cumulative reproductive risk scores of 1, 2, and 3 or 4, respectively, each versus 0]. The postmenopausal Chinese women with an increasing number of reproductive risk factors were progressively less likely to attain ideal levels of cardiovascular health factors.

High sensitivity detection of trace gases at atmospheric pressure using tunable diode lasers

NASA Technical Reports Server (NTRS)

Reid, J.; Sinclair, R. L.; Grant, W. B.; Menzies, R. T.

1985-01-01

A detailed study of the detection of trace gases at atmospheric pressure using tunable diode lasers is described. The influence of multipass cells, retroreflectors and topographical targets is examined. The minimum detectable infrared absorption ranges from 0.1 percent for a pathlength of 1.2 km to 0.01 percent over short pathlengths. The factors which limit this sensitivity are discussed, and the techniques are illustrated by monitoring atmospehric CO2 and CH4.

Suppression of the Transit -Time Instability in Large-Area Electron Beam Diodes

NASA Astrophysics Data System (ADS)

Myers, Matthew C.; Friedman, Moshe; Swanekamp, Stephen B.; Chan, Lop-Yung; Ludeking, Larry; Sethian, John D.

2002-12-01

Experiment, theory, and simulation have shown that large-area electron-beam diodes are susceptible to the transit-time instability. The instability modulates the electron beam spatially and temporally, producing a wide spread in electron energy and momentum distributions. The result is gross inefficiency in beam generation and propagation. Simulations indicate that a periodic, slotted cathode structure that is loaded with resistive elements may be used to eliminate the instability. Such a cathode has been fielded on one of the two opposing 60 cm × 200 cm diodes on the NIKE KrF laser at the Naval Research Laboratory. These diodes typically deliver 600 kV, 500 kA, 250 ns electron beams to the laser cell in an external magnetic field of 0.2 T. We conclude that the slotted cathode suppressed the transit-time instability such that the RF power was reduced by a factor of 9 and that electron transmission efficiency into the laser gas was improved by more than 50%.

Continued improvement in reduced-mode (REM) diodes enable 272 W from 105 μm 0.15 NA beam

NASA Astrophysics Data System (ADS)

Kanskar, M.; Bao, L.; Chen, Z.; Dawson, D.; DeVito, M.; Dong, W.; Grimshaw, M.; Guan, X.; Hemenway, M.; Martinsen, R.; Urbanek, W.; Zhang, S.

2017-02-01

High-power, high-brightness diode lasers from 8xx nm to 9xx nm have been pursued in many applications including fiber laser pumping, materials processing, solid-state laser pumping, and consumer electronics manufacturing. In particular, 915 nm - 976 nm diodes are of interest as diode pumps for the kilowatt CW fiber lasers. Thus, there have been many technical efforts on driving the diode lasers to have both high power and high brightness to achieve high-performance and reduced manufacturing costs. This paper presents our continued progress in the development of high brightness fiber-coupled product platform, elementTM. In the past decade, the amount of power coupled into a single 105 μm and 0.15 NA fiber has increased by over a factor of ten through improved diode laser brilliance and the development of techniques for efficiently coupling multiple emitters into a single fiber. In this paper, we demonstrate the further brightness improvement and power-scaling enabled by both the rise in chip brightness/power and the increase in number of chips coupled into a given numerical aperture. We report a new x-REM design with brightness as high as 4.3 W/mm-mrad at a BPP of 3 mm-mrad. We also report the record 272W from a 2×9 elementTM with 105 μm/0.15 NA beam using x-REM diodes and a new product introduction at 200W output power from 105 μm/0.15 NA beam at 915 nm.

On the output factor measurements of the CyberKnife iris collimator small fields: Experimental determination of the k{sub Q{sub c{sub l{sub i{sub n,Q{sub m{sub s{sub r}{sup f{sub c}{sub l}{sub i}{sub n},f{sub m}{sub s}{sub r}}}}}}}}} correction factors for microchamber and diode detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pantelis, E.; Moutsatsos, A.; Zourari, K.

Purpose: To measure the output factors (OFs) of the small fields formed by the variable aperture collimator system (iris) of a CyberKnife (CK) robotic radiosurgery system, and determine the k{sub Q{sub c{sub l{sub i{sub n,Q{sub m{sub s{sub r}{sup f{sub c}{sub l}{sub i}{sub n},f{sub m}{sub s}{sub r}}}}}}}}} correction factors for a microchamber and four diode detectors. Methods: OF measurements were performed using a PTW PinPoint 31014 microchamber, four diode detectors (PTW-60017, -60012, -60008, and the SunNuclear EDGE detector), TLD-100 microcubes, alanine dosimeters, EBT films, and polymer gels for the 5 mm, 7.5 mm, 10 mm, 12.5 mm, and 15 mm irismore » collimators at 650 mm, 800 mm, and 1000 mm source to detector distance (SDD). The alanine OF measurements were corrected for volume averaging effects using the 3D dose distributions registered in polymer gel dosimeters. k{sub Q{sub c{sub l{sub i{sub n,Q{sub m{sub s{sub r}{sup f{sub c}{sub l}{sub i}{sub n},f{sub m}{sub s}{sub r}}}}}}}}} correction factors for the PinPoint microchamber and the diode dosimeters were calculated through comparison against corresponding polymer gel, EBT, alanine, and TLD results. Results: Experimental OF results are presented for the array of dosimetric systems used. The PinPoint microchamber was found to underestimate small field OFs, and a k{sub Q{sub c{sub l{sub i{sub n,Q{sub m{sub s{sub r}{sup f{sub c}{sub l}{sub i}{sub n},f{sub m}{sub s}{sub r}}}}}}}}} correction factor ranging from 1.127 {+-} 0.022 (for the 5 mm iris collimator) to 1.004 {+-} 0.010 (for the 15 mm iris collimator) was determined at the reference SDD of 800 mm. The PinPoint k{sub Q{sub c{sub l{sub i{sub n,Q{sub m{sub s{sub r}{sup f{sub c}{sub l}{sub i}{sub n},f{sub m}{sub s}{sub r}}}}}}}}} correction factor was also found to increase with decreasing SDD; k{sub Q{sub c{sub l{sub i{sub n,Q{sub m{sub s{sub r}{sup f{sub c}{sub l}{sub i}{sub n},f{sub m}{sub s}{sub r}}}}}}}}} values equal to 1.220 {+-} 0.028 and 1.077 {+-} 0.016 were obtained for the 5 mm iris collimator at 650 mm and 1000 mm SDD, respectively. On the contrary, diode detectors were found to overestimate small field OFs and a correction factor equal to 0.973 {+-} 0.006, 0.954 {+-} 0.006, 0.937 {+-} 0.007, and 0.964 {+-} 0.006 was measured for the PTW-60017, -60012, -60008 and the EDGE diode detectors, respectively, for the 5 mm iris collimator at 800 mm SDD. The corresponding correction factors for the 15 mm iris collimator were found equal to 0.997 {+-} 0.010, 0.994 {+-} 0.009, 0.988 {+-} 0.010, and 0.986 {+-} 0.010, respectively. No correlation of the diode k{sub Q{sub c{sub l{sub i{sub n,Q{sub m{sub s{sub r}{sup f{sub c}{sub l}{sub i}{sub n},f{sub m}{sub s}{sub r}}}}}}}}} correction factors with SDD was observed. Conclusions: This work demonstrates an experimental procedure for the determination of the k{sub Q{sub c{sub l{sub i{sub n,Q{sub m{sub s{sub r}{sup f{sub c}{sub l}{sub i}{sub n},f{sub m}{sub s}{sub r}}}}}}}}} correction factors required to obtain small field OF results of increased accuracy.« less

Design of thin InGaAsN(Sb) n-i-p junctions for use in four-junction concentrating photovoltaic devices

NASA Astrophysics Data System (ADS)

Wilkins, Matthew M.; Gupta, James; Jaouad, Abdelatif; Bouzazi, Boussairi; Fafard, Simon; Boucherif, Abderraouf; Valdivia, Christopher E.; Arès, Richard; Aimez, Vincent; Schriemer, Henry P.; Hinzer, Karin

2017-04-01

Four-junction solar cells for space and terrestrial applications require a junction with a band gap of ˜1 eV for optimal performance. InGaAsN or InGaAsN(Sb) dilute nitride junctions have been demonstrated for this purpose, but in achieving the 14 mA/cm2 short-circuit current needed to match typical GaInP and GaAs junctions, the open-circuit voltage (VOC) and fill factor of these junctions are compromised. In multijunction devices incorporating materials with short diffusion lengths, we study the use of thin junctions to minimize sensitivity to varying material quality and ensure adequate transmission into lower junctions. An n-i-p device with 0.65-μm absorber thickness has sufficient short-circuit current, however, it relies less heavily on field-aided collection than a device with a 1-μm absorber. Our standard cell fabrication process, which includes a rapid thermal anneal of the contacts, yields a significant improvement in diffusion length and device performance. By optimizing a four-junction cell around a smaller 1-sun short-circuit current of 12.5 mA/cm2, we produced an InGaAsN(Sb) junction with open-circuit voltage of 0.44 V at 1000 suns (1 sun=100 mW/cm2), diode ideality factor of 1.4, and sufficient light transmission to allow >12.5 mA/cm2 in all four subcells.

The photovoltaic impact of atomic layer deposited TiO2 interfacial layer on Si-based photodiodes

NASA Astrophysics Data System (ADS)

Karabulut, Abdulkerim; Orak, İkram; Türüt, Abdulmecit

2018-06-01

In present work, photocurrent, current-voltage (I-V) and capacitance/conductance-voltage-frequency (C/G-V-f) measurements were analyzed for the photodiode and diode parameters of Al/TiO2/p-Si structure. The TiO2 thin film structure was deposited on p-Si by using atomic layer deposition technique (ALD) and its thickness was about 10 nm. The surface morphology of TiO2 coated on p-Si structure was observed via atomic force microscope (AFM). Barrier height (Φb) and ideality factor (n) values of device were found to be 0.80 eV, 0.70 eV, 0.56 eV and 1.04, 2.24, 10.27 under dark, 10 and 100 mW/cm2, respectively. Some photodiodes parameters such as fill factor (FF), power efficiency (%η), open circuit voltage (Voc), short circuit current (Isc) were obtained from I-V measurement under different light intensity. FF and η were accounted 49.2, 39,0 and 0.05, 0.45 under 10 and 100 mW/cm2 light power intensity, respectively. C-2-V graph was plotted from C-V-f measurements and zero bias voltage (V0), donor concentration (Nd), Fermi energy (EF), barrier height (Φb) and maximum electric field (Em) were determined from C-2-V data for different frequencies. The electrical and photocurrent values demonstrated that it can be used for photodiode, photo detector and photo sensing applications.

Fill-factor improvement of Si CMOS single-photon avalanche diode detector arrays by integration of diffractive microlens arrays.

PubMed

Intermite, Giuseppe; McCarthy, Aongus; Warburton, Ryan E; Ren, Ximing; Villa, Federica; Lussana, Rudi; Waddie, Andrew J; Taghizadeh, Mohammad R; Tosi, Alberto; Zappa, Franco; Buller, Gerald S

2015-12-28

Single-photon avalanche diode (SPAD) detector arrays generally suffer from having a low fill-factor, in which the photo-sensitive area of each pixel is small compared to the overall area of the pixel. This paper describes the integration of different configurations of high efficiency diffractive optical microlens arrays onto a 32 × 32 SPAD array, fabricated using a 0.35 µm CMOS technology process. The characterization of SPAD arrays with integrated microlens arrays is reported over the spectral range of 500-900 nm, and a range of f-numbers from f/2 to f/22. We report an average concentration factor of 15 measured for the entire SPAD array with integrated microlens array. The integrated SPAD and microlens array demonstrated a very high uniformity in overall efficiency.

Note: Fully integrated active quenching circuit achieving 100 MHz count rate with custom technology single photon avalanche diodes.

PubMed

Acconcia, G; Labanca, I; Rech, I; Gulinatti, A; Ghioni, M

2017-02-01

The minimization of Single Photon Avalanche Diodes (SPADs) dead time is a key factor to speed up photon counting and timing measurements. We present a fully integrated Active Quenching Circuit (AQC) able to provide a count rate as high as 100 MHz with custom technology SPAD detectors. The AQC can also operate the new red enhanced SPAD and provide the timing information with a timing jitter Full Width at Half Maximum (FWHM) as low as 160 ps.

Ultra-low input power long-wavelength GaSb type-I laser diodes at 2.7-3.0 μm

NASA Astrophysics Data System (ADS)

Vizbaras, Augustinas; Greibus, Mindaugas; Dvinelis, Edgaras; Trinkūnas, Augustinas; Kovalenkovas, Deividas; Šimonytė, Ieva; Vizbaras, Kristijonas

2014-02-01

Mid-infrared spectral region (2-4 μm) is gaining significant attention recently due to the presence of numerous enabling applications in the field of gas sensing, medical, environmental and defense applications. Major requirement for these applications is the availability of laser sources in this spectral window. Type-I GaSb-based laser diodes are ideal candidates for these applications being compact, electrically pumped, power efficient and able to operate at room temperature in continuous-wave. Moreover, due to the nature of type-I transition; these devices have a characteristic low operation voltage, typically below 1 V, resulting in low power consumption, and high-temperature of operation. In this work, we present recent progress of 2.7 μm - 3.0 μm wavelength single-spatial mode GaSb type-I laser diode development at Brolis Semiconductors. Experimental device structures were grown by solid-source multi-wafer MBE, consisting of an active region with 2 compressively strained (~1.3 %-1.5 %) GaInAsSb quantum wells with GaSb barriers for 2.7 μm devices and quinternary AlGaInAsSb barriers for 3.0 μm devices. Epi-wafers were processed into a narrow-ridge (2-4 μm) devices and mounted p-side up on CuW heatsink. Devices exhibited very low CW threshold powers of < 100 mW, and single spatial mode (TE00) operation with room-temperature output powers up to 40 mW in CW mode. Operating voltage was as low as 1.2 V at 1.2 A. As-cleaved devices worked CW up to 50 deg C.

SU-E-T-370: Measurement of Conical Cone Output Factors for the Varian Edge Linear Accelerator

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, H; Kim, J; Gordon, J

Purpose: To quantify the impact of detector type, SSD/depth, and intermediate reference on conical cone output factor (OF) measurements for the Varian Edge linac. Methods: OF's for 4, 5, 7.5, 10, 12.5, 15, and 17.5 mm diameter cones relative to 10cmx10cm field were measured for the 6X FFF and 10X FFF energies, with jaws set to 5cmx5cm. Measurements were performed with an Edge diode (0.8mmx0.8mmx0.03mm WxLxT), stereotatic diode SFD, photon diode, CC01 and pinpoint chambers (2mm diameter for both). 95cm SSD/5cm depth were used in a water tank. For the measurement with diodes, OF's were cross-referred to CC13 ion chambermore » measurements with 3cmx3cm field, as recommended, to help mitigate the energy variation in diode response with field size. Results were compared to the representative data from Varian measured with Edge detector. With SFD, OF's at 98.5cm SSD/1.5cm depth and 90cm SSD/10cm depth were also measured. Results: OF's measured with the Edge detector matched within 1.3% (max diff) with the representative data from Varian. For the SFD, OF's matched within 1.3% for the 4, 5 and 17.5 mm cones and within 3.7% for the other cones. OF's with photon diode were within 1.3% except for the 4 and 5 mm cones where they were 8.1% and 3.7%, respectively. OF's for the CC01 and pinpoint chamber deviated up to 36% and 44%, respectively for the 4 mm cone. OF's after intermediate reference with 3cmx3cm field changed by 3.7% for SFD, 0.8% for photon diode, and 0.6% for Edge detector. OF's at 98.5cm SSD/1.5cm depth were 10.8% higher than that at 95cm SSD/5cm depth, and OF's at 90cm SSD/1.5cm depth were 7.5% lower. Conclusion: OF's measured with the Edge detector appear to be reliable. CC01 and pinpoint chambers do not appear suitable for measuring the small cone OF's. SSD/depth affects OF measurements significantly.« less

Diode laser-induced tissue effects: in vitro tissue model study and in vivo evaluation of wound healing following non-contact application.

PubMed

Havel, Miriam; Betz, Christian S; Leunig, Andreas; Sroka, Ronald

2014-08-01

The basic difference between the various common medical laser systems is the wavelength of the emitted light, leading to altered light-tissue interactions due to the optical parameters of the tissue. This study examines laser induced tissue effects in an in vitro tissue model using 1,470 nm diode laser compared to our standard practice for endonasal applications (940 nm diode laser) under standardised and reproducible conditions. Additionally, in vivo induced tissue effects following non-contact application with focus on mucosal healing were investigated in a controlled intra-individual design in patients treated for hypertrophy of nasal turbinate. A certified diode laser system emitting the light of λ = 1470 nm was evaluated with regards to its tissue effects (ablation, coagulation) in an in vitro setup on porcine liver and turkey muscle tissue model. To achieve comparable macroscopic tissue effects the laser fibres (600 µm core diameter) were fixed to a computer controlled stepper motor and the laser light was applied in a reproducible procedure under constant conditions. For the in vivo evaluation, 20 patients with nasal obstruction due to hyperplasia of inferior nasal turbinates were included in this prospective randomised double-blinded comparative trial. The endoscopic controlled endonasal application of λ = 1470 nm on the one and λ = 940 nm on the other side, both in 'non-contact' mode, was carried out as an outpatient procedure under local anaesthesia. The postoperative wound healing process (mucosal swelling, scab formation, bleeding, infection) was endoscopically documented and assessed by an independent physician. In the experimental setup, the 1,470 nm laser diode system proved to be efficient in inducing tissue effects in non-contact mode with a reduced energy factor of 5-10 for highly perfused liver tissue to 10-20 for muscle tissue as compared to the 940 nm diode laser system. In the in vivo evaluation scab formation following laser surgery as assessed clinically on endonasal endoscopy was significantly reduced on 1,470 nm treated site compared to 940 nm diode laser treated site. Diode laser system (1,470 nm) induces efficient tissue effects compared to 940 nm diode laser system as shown in the tissue model experiment. From the clinical point of view, the healing process following non-contact diode laser application revealed to be improved using 1,470 nm diode laser compared to our standard diode laser practise with 940 nm. © 2014 Wiley Periodicals, Inc.

Electric field distribution and current emission in a miniaturized geometrical diode

NASA Astrophysics Data System (ADS)

Lin, Jinpu; Wong, Patrick Y.; Yang, Penglu; Lau, Y. Y.; Tang, W.; Zhang, Peng

2017-06-01

We study the electric field distribution and current emission in a miniaturized geometrical diode. Using Schwarz-Christoffel transformation, we calculate exactly the electric field inside a finite vacuum cathode-anode (A-K) gap with a single trapezoid protrusion on one of the electrode surfaces. It is found that there is a strong field enhancement on both electrodes near the protrusion, when the ratio of the A-K gap distance to the protrusion height d /h <2. The calculations are spot checked against COMSOL simulations. We calculate the effective field enhancement factor for the field emission current, by integrating the local Fowler-Nordheim current density along the electrode surfaces. We systematically examine the electric field enhancement and the current rectification of the miniaturized geometrical diode for various geometric dimensions and applied electric fields.

Management of a Recurrent Pyogenic Granuloma of the Hard Palate with Diode Laser: A Case Report.

PubMed

Hasanoglu Erbasar, Güzin Neda; Senguven, Burcu; Gultekin, Sibel Elif; Cetiner, Sedat

2016-01-01

Pyogenic granuloma (PG) is a prevalent inflammatory hyperplasia of skin and oral mucosa which is often caused by constant low-grade local irritation, traumatic injury or hormonal factors. In many cases, gingival irritation and inflammation due to poor oral hygiene are precipitating factors. Oral PG occurs predominantly on the gingiva, but it is also encountered on the lips, tongue, buccal mucosa and rarely on the hard palate. Although surgical excision is the first choice of treatment, many other treatment modalities could be counted such as cryosurgery, sodium tetradecyl sulfate sclerotherapy, intralesional steroids, flash lamp pulsed dye laser, neodymium-doped yttrium aluminium garnet (Nd:YAG) laser, carbon dioxide (CO2) laser, erbium-doped yttrium aluminum garnet (Er:YAG) lasers and diode laser have been suggested. After surgical excision recurrence occurs up to 16% of these lesions. It is believed that recurrence ensues as a result of incomplete excision, failure to eliminate etiologic factors or repeated trauma. A 50-year-old female was referred to the Department of Oral Surgery, Gazi University, School of Dentistry, complaining of a swelling and growth on the right side of the hard palate for four months. Patient reported a similar growth in the same area about two years earlier, which had turned out to be a PG by histopathology. The treatment plan included surgical excision of the lesion using diode laser. The patient reported no pain after the surgery. She was discharged with a prescription of chlorhexidine mouthwash and necessary post-operative instructions. At 7 days follow up visit, immediate recurrence of the lesion was observed, and it was excised by diode laser with 2 mm margins at its clinical periphery, to a depth up to the periosteum, by the same operator. No recurrence or scarring was observed in 14 months follow-up. Although diode laser is a secure and efficient technique for the treatment of intraoral PG, in order to minimize its recurrence, the lesion should be excised with a wider margin down to the periosteum or to the causing agent. Also due to its high recurrence rate, long-term follow-up is recommended.

Temperature-dependent electrical characteristics and carrier transport mechanism of p-Cu2ZnSnS4/n-GaN heterojunctions

NASA Astrophysics Data System (ADS)

Niteesh Reddy, Varra; Reddy, M. Siva Pratap; Gunasekhar, K. R.; Lee, Jung-Hee

2018-04-01

This work explores the temperature-dependent electrical characteristics and carrier transport mechanism of Au/p-Cu2ZnSnS4/n-type GaN heterojunction (HJ) diodes with a CZTS interlayer. The electrical characteristics were examined by current-voltage-temperature, turn-on voltage-temperature and series resistance-temperature in the high-temperature range of 300-420 K. It is observed that an exponential decrease in the series resistance ( R S) and increase in the ideality factor ( n) and barrier height ( ϕ b) with increase in temperature. The thermal coefficient ( K j) is determined to be - 1.3 mV K-1 at ≥ 300 K. The effective ϕ b is determined to be 1.21 eV. This obtained barrier height is consistent with the theoretical one. The characteristic temperature ( T 0) resulting from the Cheung's functions [d V/d(ln I) vs. I and H( I) vs. I], is seen that there is good agreement between the T 0 values from both Cheung's functions. The relevant carrier transport mechanisms of Au/p-CZTS/n-type GaN HJ are explained based on the thermally decreased energy band gap of n-type GaN layers, thermally activated deep donors and increased further activated shallow donors.

Effect of the hexagonal phase interlayer on rectification properties of boron nitride heterojunctions to silicon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Teii, K., E-mail: teii@asem.kyushu-u.ac.jp; Ito, H.; Katayama, N.

2015-02-07

Rectification properties of boron nitride/silicon p-n heterojunction diodes fabricated under low-energy ion impact by plasma-enhanced chemical vapor deposition are studied in terms of the resistive sp{sup 2}-bonded boron nitride (sp{sup 2}BN) interlayer. A two-step biasing technique is developed to control the fraction of cubic boron nitride (cBN) phase and, hence, the thickness of the sp{sup 2}BN interlayer in the films. The rectification ratio at room temperature is increased up to the order of 10{sup 4} at ±10 V of biasing with increasing the sp{sup 2}BN thickness up to around 130 nm due to suppression of the reverse leakage current. The variation ofmore » the ideality factor in the low bias region is related to the interface disorders and defects, not to the sp{sup 2}BN thickness. The forward current follows the Frenkel-Poole emission model in the sp{sup 2}BN interlayer at relatively high fields when the anomalous effect is assumed. The transport of the minority carriers for reverse current is strongly limited by the high bulk resistance of the thick sp{sup 2}BN interlayer, while that of the major carriers for forward current is much less affected.« less

2D Ruddlesden-Popper Perovskites Microring Laser Array.

PubMed

Zhang, Haihua; Liao, Qing; Wu, Yishi; Zhang, Zhaoyi; Gao, Qinggang; Liu, Peng; Li, Meili; Yao, Jiannian; Fu, Hongbing

2018-04-01

3D organic-inorganic hybrid perovskites have featured high gain coefficients through the electron-hole plasma stimulated emission mechanism, while their 2D counterparts of Ruddlesden-Popper perovskites (RPPs) exhibit strongly bound electron-hole pairs (excitons) at room temperature. High-performance solar cells and light-emitting diodes (LEDs) are reported based on 2D RPPs, whereas light-amplification devices remain largely unexplored. Here, it is demonstrated that ultrafast energy transfer along cascade quantum well (QW) structures in 2D RPPs concentrates photogenerated carriers on the lowest-bandgap QW state, at which population inversion can be readily established enabling room-temperature amplified spontaneous emission and lasing. Gain coefficients measured for 2D RPP thin-films (≈100 nm in thickness) are found about at least four times larger than those for their 3D counterparts. High-density large-area microring arrays of 2D RPPs are fabricated as whispering-gallery-mode lasers, which exhibit high quality factor (Q ≈ 2600), identical optical modes, and similarly low lasing thresholds, allowing them to be ignited simultaneously as a laser array. The findings reveal that 2D RPPs are excellent solution-processed gain materials potentially for achieving electrically driven lasers and ideally for on-chip integration of nanophotonics. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Synthesis and Characterization of Methylammonium Lead Iodide Perovskite and its Application in Planar Hetero-junction Devices

NASA Astrophysics Data System (ADS)

Upadhyaya, Aditi; Mohan Singh Negi, Chandra; Yadav, Anjali; Gupta, Saral K.; Singh Verma, Ajay

2018-06-01

The present paper reports on the synthesis and characterization of methylammonium lead iodide perovskite thin film and its applications in heterojunction devices. Perovskite thin films were deposited by a simple spin-coating method using a precursor solution including methyl ammonium iodide and lead iodide onto a glass substrate. The surface morphology study via field emission scanning electron microscopy of the perovskite thin film shows complete surface coverage on glass substrate with negligible pin-holes. UV–visible spectroscopy study revealed a broad absorption range and the exhibition of a band-gap of 1.6 eV. The dark current-voltage (I–V) characteristics of all the devices under study show rectifying behaviour similar to the Schottky diode. Various device parameters such as ideality factor and barrier height are extracted from the I–V curve. At low voltages the devices exhibit Ohmic behaviour, trap free space charge limited conduction governs the charge transport at an intermediate voltage range, while at much higher voltages the devices show trap controlled space charge limited conduction. Furthermore, impedance spectroscopy measurements enable us to extract the various internal parameters of the devices. Correlations between these parameters and I–V characteristics are discussed. The different capacitive process arising in the devices was discussed using the capacitance versus frequency curve.

Hybrid graphene/silicon Schottky photodiode with intrinsic gating effect

NASA Astrophysics Data System (ADS)

Di Bartolomeo, Antonio; Luongo, Giuseppe; Giubileo, Filippo; Funicello, Nicola; Niu, Gang; Schroeder, Thomas; Lisker, Marco; Lupina, Grzegorz

2017-06-01

We propose a hybrid device consisting of a graphene/silicon (Gr/Si) Schottky diode in parallel with a Gr/SiO2/Si capacitor for high-performance photodetection. The device, fabricated by transfer of commercial graphene on low-doped n-type Si substrate, achieves a photoresponse as high as 3 \\text{A} {{\\text{W}}-1} and a normalized detectivity higher than 3.5× {{10}12} \\text{cm} \\text{H}{{\\text{z}}1/2} {{\\text{W}}-1} in the visible range. It exhibits a photocurrent exceeding the forward current because photo-generated minority carriers, accumulated at Si/SiO2 interface of the Gr/SiO2/Si capacitor, diffuse to the Gr/Si junction. We show that the same mechanism, when due to thermally generated carriers, although usually neglected or disregarded, causes the increased leakage often measured in Gr/Si heterojunctions. We perform extensive I-V and C-V characterization at different temperatures and we measure a zero-bias Schottky barrier height of 0.52 eV at room temperature, as well as an effective Richardson constant A **  =  4× {{10}-5} \\text{A} \\text{c}{{\\text{m}}-2} {{\\text{K}}-2} and an ideality factor n≈ 3.6 , explained by a thin (<1 nm) oxide layer at the Gr/Si interface.

Measurement of Beta Particles Induced Electron-Hole Pairs Recombination in Depletion Region of GaAs PN Junction

NASA Astrophysics Data System (ADS)

Chen, Hai-Yang; Jiang, Lan; Li, Da-Rang

2011-05-01

PN junctions and schottky diodes are widely employed as electron-hole pair collectors in electron beam induced current (EBIC) techniques and betavoltaic batteries, in which the recombination in depletion regions is ignored. We measured the beta particles induced electron-hole pairs recombination in the depletion region of a GaAs P+PN+ junction, based on comparisons between measured short currents and ideal values. The results show that only 20% electron-hole pairs in the depletion can be collected, causing the short current. This indicates an electron-hole pair diffusion length of 0.2μm in the depletion region. Hence, it is necessary to evaluate the recombination in the EBIC techniques and betavoltaic design.

Simulate different environments TDLAS On the analysis of the test signal strength

NASA Astrophysics Data System (ADS)

Li, Xin; Zhou, Tao; Jia, Xiaodong

2014-12-01

TDLAS system is the use of the wavelength tuning characteristics of the laser diode, for detecting the absorption spectrum of the gas absorption line. Detecting the gas space, temperature, pressure and flow rate and concentration. The use of laboratory techniques TDLAS gas detection, experimental simulation engine combustion water vapor and smoke. using an optical lens system receives the signal acquisition and signal interference test analysis. Analog water vapor and smoke in two different environments in the sample pool interference. In both experiments environmental interference gas absorption in the optical signal acquisition, signal amplitude variation analysis, and records related to the signal data. In order to study site conditions in the engine combustion process for signal acquisition provides an ideal experimental data .

Stability of DIII-D high-performance, negative central shear discharges

DOE PAGES

Hanson, Jeremy M.; Berkery, John W.; Bialek, James M.; ...

2017-03-20

Tokamak plasma experiments on the DIII-D device demonstrate high-performance, negative central shear (NCS) equilibria with enhanced stability when the minimum safety factor q min exceeds 2, qualitatively confirming theoretical predictions of favorable stability in the NCS regime. The discharges exhibit good confinement with an L-mode enhancement factor H 89 = 2.5, and are ultimately limited by the ideal-wall external kink stability boundary as predicted by ideal MHD theory, as long as tearing mode (TM) locking events, resistive wall modes (RWMs), and internal kink modes are properly avoided or controlled. Although the discharges exhibit rotating TMs, locking events are avoided asmore » long as a threshold minimum safety factor value q min > 2 is maintained. Fast timescale magnetic feedback control ameliorates RWM activity, expanding the stable operating space and allowing access to β N values approaching the ideal-wall limit. Quickly growing and rotating instabilities consistent with internal kink mode dynamics are encountered when the ideal-wall limit is reached. The RWM events largely occur between the no- and ideal-wall pressure limits predicted by ideal MHD. However, evaluating kinetic contributions to the RWM dispersion relation results in a prediction of passive stability in this regime due to high plasma rotation. In addition, the ideal MHD stability analysis predicts that the ideal-wall limit can be further increased to β N > 4 by broadening the current profile. Furthermore, this path toward improved stability has the potential advantage of being compatible with the bootstrap-dominated equilibria envisioned for advanced tokamak (AT) fusion reactors.« less

Stability of DIII-D high-performance, negative central shear discharges

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hanson, Jeremy M.; Berkery, John W.; Bialek, James M.

Tokamak plasma experiments on the DIII-D device demonstrate high-performance, negative central shear (NCS) equilibria with enhanced stability when the minimum safety factor q min exceeds 2, qualitatively confirming theoretical predictions of favorable stability in the NCS regime. The discharges exhibit good confinement with an L-mode enhancement factor H 89 = 2.5, and are ultimately limited by the ideal-wall external kink stability boundary as predicted by ideal MHD theory, as long as tearing mode (TM) locking events, resistive wall modes (RWMs), and internal kink modes are properly avoided or controlled. Although the discharges exhibit rotating TMs, locking events are avoided asmore » long as a threshold minimum safety factor value q min > 2 is maintained. Fast timescale magnetic feedback control ameliorates RWM activity, expanding the stable operating space and allowing access to β N values approaching the ideal-wall limit. Quickly growing and rotating instabilities consistent with internal kink mode dynamics are encountered when the ideal-wall limit is reached. The RWM events largely occur between the no- and ideal-wall pressure limits predicted by ideal MHD. However, evaluating kinetic contributions to the RWM dispersion relation results in a prediction of passive stability in this regime due to high plasma rotation. In addition, the ideal MHD stability analysis predicts that the ideal-wall limit can be further increased to β N > 4 by broadening the current profile. Furthermore, this path toward improved stability has the potential advantage of being compatible with the bootstrap-dominated equilibria envisioned for advanced tokamak (AT) fusion reactors.« less

AlGaInN laser diode technology and systems for defence and security applications

NASA Astrophysics Data System (ADS)

Najda, Stephen P.; Perlin, Piotr; Suski, Tadek; Marona, Lujca; Boćkowski, Mike; Leszczyński, Mike; Wisniewski, Przemek; Czernecki, Robert; Kucharski, Robert; Targowski, Grzegorz; Watson, Scott; Kelly, Antony E.

2015-10-01

AlGaInN laser diodes is an emerging technology for defence and security applications such as underwater communications and sensing, atomic clocks and quantum information. The AlGaInN material system allows for laser diodes to be fabricated over a very wide range of wavelengths from u.v., ~380nm, to the visible ~530nm, by tuning the indium content of the laser GaInN quantum well. Thus AlGaInN laser diode technology is a key enabler for the development of new disruptive system level applications in displays, telecom, defence and other industries. Ridge waveguide laser diodes are fabricated to achieve single mode operation with optical powers up to 100mW with the 400-440nm wavelength range with high reliability. Visible free-space and underwater communication at frequencies up to 2.5GHz is reported using a directly modulated 422nm GaN laser diode. Low defectivity and highly uniform GaN substrates allow arrays and bars to be fabricated. High power operation operation of AlGaInN laser bars with up to 20 emitters have been demonstrated at optical powers up to 4W in a CS package with common contact configuration. An alternative package configuration for AlGaInN laser arrays allows for each individual laser to be individually addressable allowing complex free-space or optical fibre system integration with a very small form-factor.

Determination of the KQclinfclin,Qmsr fmsr correction factors for detectors used with an 800 MU/min CyberKnife(®) system equipped with fixed collimators and a study of detector response to small photon beams using a Monte Carlo method.

PubMed

Moignier, C; Huet, C; Makovicka, L

2014-07-01

In a previous work, output ratio (ORdet) measurements were performed for the 800 MU/min CyberKnife(®) at the Oscar Lambret Center (COL, France) using several commercially available detectors as well as using two passive dosimeters (EBT2 radiochromic film and micro-LiF TLD-700). The primary aim of the present work was to determine by Monte Carlo calculations the output factor in water (OFMC,w) and the [Formula: see text] correction factors. The secondary aim was to study the detector response in small beams using Monte Carlo simulation. The LINAC head of the CyberKnife(®) was modeled using the PENELOPE Monte Carlo code system. The primary electron beam was modeled using a monoenergetic source with a radial gaussian distribution. The model was adjusted by comparisons between calculated and measured lateral profiles and tissue-phantom ratios obtained with the largest field. In addition, the PTW 60016 and 60017 diodes, PTW 60003 diamond, and micro-LiF were modeled. Output ratios with modeled detectors (ORMC,det) and OFMC,w were calculated and compared to measurements, in order to validate the model for smallest fields and to calculate [Formula: see text] correction factors, respectively. For the study of the influence of detector characteristics on their response in small beams; first, the impact of the atomic composition and the mass density of silicon, LiF, and diamond materials were investigated; second, the material, the volume averaging, and the coating effects of detecting material on the detector responses were estimated. Finally, the influence of the size of silicon chip on diode response was investigated. Looking at measurement ratios (uncorrected output factors) compared to the OFMC,w, the PTW 60016, 60017 and Sun Nuclear EDGE diodes systematically over-responded (about +6% for the 5 mm field), whereas the PTW 31014 Pinpoint chamber systematically under-responded (about -12% for the 5 mm field). ORdet measured with the SFD diode and PTW 60003 diamond detectors were in good agreement with OFMC,w except for the 5 mm field size (about -7.5% for the diamond and +3% for the SFD). A good agreement with OFMC,w was obtained with the EBT2 film and micro-LiF dosimeters (deviation less than 1.4% for all fields investigated). [Formula: see text] correction factors for several detectors used in this work have been calculated. The impact of atomic composition on the dosimetric response of detectors was found to be insignificant, unlike the mass density and size of the detecting material. The results obtained with the passive dosimeters showed that they can be used for small beam OF measurements without correction factors. The study of detector response showed that ORdet is depending on the mass density, the volume averaging, and the coating effects of the detecting material. Each effect was quantified for the PTW 60016 and 60017 diodes, the micro-LiF, and the PTW 60003 diamond detectors. None of the active detectors used in this work can be recommended as a reference for small field dosimetry, but an improved diode detector with a smaller silicon chip coated with tissue-equivalent material is anticipated (by simulation) to be a reliable small field dosimetric detector in a nonequilibrium field.

AlGaInN laser diode technology for defence, security and sensing applications

NASA Astrophysics Data System (ADS)

Najda, Stephen P.; Perlin, Piotr; Suski, Tadek; Marona, Lucja; Boćkowski, Mike; Leszczyński, Mike; Wisniewski, Przemek; Czernecki, Robert; Kucharski, Robert; Targowski, Grzegorz; Watson, Scott; Kelly, Antony E.

2014-10-01

The latest developments in AlGaInN laser diode technology are reviewed for defence, security and sensing applications. The AlGaInN material system allows for laser diodes to be fabricated over a very wide range of wavelengths from u.v., i.e, 380nm, to the visible, i.e., 530nm, by tuning the indium content of the laser GaInN quantum well. Advantages of using Plasma assisted MBE (PAMBE) compared to more conventional MOCVD epitaxy to grow AlGaInN laser structures are highlighted. Ridge waveguide laser diode structures are fabricated to achieve single mode operation with optical powers of <100mW in the 400-420nm wavelength range that are suitable for telecom applications. Visible light communications at high frequency (up to 2.5 Gbit/s) using a directly modulated 422nm Gallium-nitride (GaN) blue laser diode is reported. High power operation of AlGaInN laser diodes is demonstrated with a single chip, AlGaInN laser diode `mini-array' with a common p-contact configuration at powers up to 2.5W cw at 410nm. Low defectivity and highly uniform GaN substrates allow arrays and bars of nitride lasers to be fabricated. GaN laser bars of up to 5mm with 20 emitters, mounted in a CS mount package, give optical powers up to 4W cw at ~410nm with a common contact configuration. An alternative package configuration for AlGaInN laser arrays allows for each individual laser to be individually addressable allowing complex free-space and/or fibre optic system integration within a very small form-factor.or.

Luminescence properties of Dy 3+ -doped Li 2 SrSiO 4 for NUV-excited white LEDs

NASA Astrophysics Data System (ADS)

You, Panli; Yin, Guangfu; Chen, Xianchun; Yue, Bo; Huang, Zhongbing; Liao, Xiaoming; Yao, Yadong

2011-09-01

A series of single-phase full color phosphors, Dy 3+-doped Li 2SrSiO 4 was synthesized by a solid-state reaction method. The phase of the as-prepared powders was measured by X-ray diffraction pattern (XRD) and the chemical composition was characterized using energy dispersive spectroscopy (EDS). The luminescent properties of Li 2SrSiO 4:Dy 3+ were systematically investigated by concentration quenching, decay behavior and thermal stability measurements. The results suggested that the emission intensity of the Li 2SrSiO 4:Dy 3+ was much stronger than that of Li 2SrSiO 4:Eu 2+. It was worth to mention that Li 2SrSiO 4:Dy 3+ phosphor possessed excellent thermal stability for use in light-emitting diodes (LEDs) and the emission intensity measured at 300 °C was only decreased 8% comparing with that measured at room temperature. Furthermore, the Commission International del'Eclairage (CIE) chromaticity coordinates of Li 2SrSiO 4:Dy 3+ moved toward the ideal white light coordinates (0.33, 0.33). All results demonstrated that Li 2SrSiO 4:Dy 3+ might be a potential phosphor for NUV-based white light-emitting diodes.

Phosphor-Free InGaN White Light Emitting Diodes Using Flip-Chip Technology

PubMed Central

Li, Ying-Chang; Chang, Liann-Be; Chen, Hou-Jen; Yen, Chia-Yi; Pan, Ke-Wei; Huang, Bohr-Ran; Kuo, Wen-Yu; Chow, Lee; Zhou, Dan; Popko, Ewa

2017-01-01

Monolithic phosphor-free two-color gallium nitride (GaN)-based white light emitting diodes (LED) have the potential to replace current phosphor-based GaN white LEDs due to their low cost and long life cycle. Unfortunately, the growth of high indium content indium gallium nitride (InGaN)/GaN quantum dot and reported LED’s color rendering index (CRI) are still problematic. Here, we use flip-chip technology to fabricate an upside down monolithic two-color phosphor-free LED with four grown layers of high indium quantum dots on top of the three grown layers of lower indium quantum wells separated by a GaN tunneling barrier layer. The photoluminescence (PL) and electroluminescence (EL) spectra of this white LED reveal a broad spectrum ranging from 475 to 675 nm which is close to an ideal white-light source. The corresponding color temperature and color rendering index (CRI) of the fabricated white LED, operated at 350, 500, and 750 mA, are comparable to that of the conventional phosphor-based LEDs. Insights of the epitaxial structure and the transport mechanism were revealed through the TEM and temperature dependent PL and EL measurements. Our results show true potential in the Epi-ready GaN white LEDs for future solid state lighting applications. PMID:28772792

Increasing the effective absorption of Eu3+-doped luminescent materials towards practical light emitting diodes for illumination applications

NASA Astrophysics Data System (ADS)

van de Haar, Marie Anne; Werner, Jan; Kratz, Nadja; Hilgerink, Tom; Tachikirt, Mohamed; Honold, Jürgen; Krames, Michael R.

2018-03-01

White light emitting diodes (LEDs) composed of a blue LED and a green/yellow downconverter material (phosphor) can be very efficient, but the color is often not considered very pleasant. Although the color rendering can be improved by adding a second, red-emitting phosphor, this generally results in significantly reduced efficacy of the device due to the broad emission of available conventional red-emitting phosphors. Trivalent europium is well-known for its characteristic narrow-band emission in the red region, with little radiation outside the eye sensitivity area, making it an ideal candidate for enabling high color quality as well as a high lumen equivalent of radiation from a spectrum point of view. However, a thorough study of the practical potential and challenges of Eu3+ as a red emitter for white LEDs has remained elusive so far due to the low excitation probability in the blue spectral range which is often even considered a fundamental limitation. Here, we show that the absorption in the blue region can be brought into an interesting regime for white LEDs and show that it is possible to increase both the color rendering and efficacy simultaneously using Eu3+ as a red emitter, compared to warm white LEDs comprising conventional materials.

Magnetic field induced suppression of the forward bias current in Bi2Se3/Si Schottky barrier diodes

NASA Astrophysics Data System (ADS)

Jin, Haoming; Hebard, Arthur

Schottky diodes formed by van der Waals bonding between freshly cleaved flakes of the topological insulator Bi2Se3 and doped silicon substrates show electrical characteristics in good agreement with thermionic emission theory. The motivation is to use magnetic fields to modulate the conductance of the topologically protected conducting surface state. This surface state in close proximity to the semiconductor surface may play an important role in determining the nature of the Schottky barrier. Current-voltage (I-V) and capacitance-voltage (C-V) characteristics were obtained for temperatures in the range 50-300 K and magnetic fields, both perpendicular and parallel to the interface, as high as 7 T. The I-V curve shows more than 6 decades linearity on semi-logarithmic plots, allowing extraction of parameters such as ideality (η), zero-voltage Schottky barrier height (SBH), and series resistance (Rs). In forward bias we observe a field-induced decrease in current which becomes increasingly more pronounced at higher voltages and lower temperature, and is found to be correlated with changes in Rs rather than other barrier parameters. A comparison of changes in Rs in both field direction will be made with magnetoresistance in Bi2Se3 transport measurement. The work is supported by NSF through DMR 1305783.

Treatment decisions and the impact of adverse events before and during extended endocrine therapy in postmenopausal early breast cancer.

PubMed

Blok, Erik J; Kroep, Judith R; Meershoek-Klein Kranenbarg, Elma; Duijm-de Carpentier, Marjolijn; Putter, Hein; Liefers, Gerrit-Jan; Nortier, Johan W R; Rutgers, Emiel J Th; Seynaeve, Caroline M; van de Velde, Cornelis J H

2018-05-01

Extended endocrine therapy beyond 5 years for postmenopausal breast cancer has been studied within multiple phase III trials. Treatment compliance in these trials is generally poor. In this analysis, we aimed to determine factors that were associated with participation in the phase III Investigation on the Duration of Extended Adjuvant Letrozole (IDEAL) trial and with early treatment discontinuation, and how this influenced survival outcome. In the IDEAL trial, postmenopausal patients were randomised between 2.5 or 5 years of extended letrozole, after completing 5 years of endocrine therapy for hormone receptor-positive early breast cancer. A subgroup of this population participated earlier in the Tamoxifen Exemestane Adjuvant Multinational trial (5 years of exemestane or 2.5 years of tamoxifen followed by exemestane as primary adjuvant therapy) in which we explored which factors were determinative for enrolment in the IDEAL study. In the IDEAL cohort, we evaluated which factors predicted for early treatment discontinuation and the effect of early treatment discontinuation on disease-free survival (DFS). Nodal status, younger age and adjuvant chemotherapy were significantly associated with higher enrolment in the IDEAL trial. In the IDEAL cohort, adverse events (AEs), the type of primary endocrine therapy and the interval between primary and extended therapy were associated with early treatment discontinuation. Among the reported AEs, depressive feelings (56%) were most frequently associated with early treatment discontinuation. Early treatment discontinuation was not associated with worse DFS (hazard ratio [HR] = 1.02, 95% confidence interval = 0.76-1.37). In this analysis, we found that risk factors were most strongly associated enrolment in the IDEAL trial. In contrast, patient experiences were the most significant factors leading to early treatment discontinuation, with no effect on DFS. Copyright © 2018 Elsevier Ltd. All rights reserved.

Peripheral dose measurements with diode and thermoluminescence dosimeters for intensity modulated radiotherapy delivered with conventional and un-conventional linear accelerator

PubMed Central

Kinhikar, Rajesh; Gamre, Poonam; Tambe, Chandrashekhar; Kadam, Sudarshan; Biju, George; Suryaprakash; Magai, C. S.; Dhote, Dipak; Shrivastava, Shyam; Deshpande, Deepak

2013-01-01

The objective of this paper was to measure the peripheral dose (PD) with diode and thermoluminescence dosimeter (TLD) for intensity modulated radiotherapy (IMRT) with linear accelerator (conventional LINAC), and tomotherapy (novel LINAC). Ten patients each were selected from Trilogy dual-energy and from Hi-Art II tomotherapy. Two diodes were kept at 20 and 25 cm from treatment field edge. TLDs (LiF:MgTi) were also kept at same distance. TLDs were also kept at 5, 10, and 15 cm from field edge. The TLDs were read with REXON reader. The readings at the respective distance were recorded for both diode and TLD. The PD was estimated by taking the ratio of measured dose at the particular distance to the prescription dose. PD was then compared with diode and TLD for LINAC and tomotherapy. Mean PD for LINAC with TLD and diode was 2.52 cGy (SD 0.69), 2.07 cGy (SD 0.88) at 20 cm, respectively, while at 25 cm, it was 1.94 cGy (SD 0.58) and 1.5 cGy (SD 0.75), respectively. Mean PD for tomotherapy with TLD and diode was 1.681 cGy SD 0.53) and 1.58 (SD 0.44) at 20 cm, respectively. The PD was 1.24 cGy (SD 0.42) and 1.088 cGy (SD 0.35) at 25 cm, respectively, for tomotherapy. Overall, PD from tomotherapy was found lower than LINAC by the factor of 1.2-1.5. PD measurement is essential to find out the potential of secondary cancer. PD for both (conventional LINAC) and novel LINACs (tomotherapy) were measured and compared with each other. The comparison of the values for PD presented in this work and those published in the literature is difficult because of the different experimental conditions. The diode and TLD readings were reproducible and both the detector readings were comparable. PMID:23531765

Generating a high brightness multi-kilowatt laser by dense spectral combination of VBG stabilized single emitter laser diodes

NASA Astrophysics Data System (ADS)

Fritsche, H.; Koch, Ralf; Krusche, B.; Ferrario, F.; Grohe, Andreas; Pflueger, S.; Gries, W.

2014-05-01

Generating high power laser radiation with diode lasers is commonly realized by geometrical stacking of diode bars, which results in high output power but poor beam parameter product (BPP). The accessible brightness in this approach is limited by the fill factor, both in slow and fast axis. By using a geometry that accesses the BPP of the individual diodes, generating a multi kilowatt diode laser with a BPP comparable to fiber lasers is possible. We will demonstrate such a modular approach for generating multi kilowatt lasers by combining single emitter diode lasers. Single emitter diodes have advantages over bars, mainly a simplified cooling, better reliability and a higher brightness per emitter. Additionally, because single emitters can be arranged in many different geometries, they allow building laser modules where the brightness of the single emitters is preserved. In order to maintain the high brightness of the single emitter we developed a modular laser design which uses single emitters in a staircase arrangement, then coupling two of those bases with polarization combination which is our basic module. Those modules generate up to 160 W with a BPP better than 7.5 mm*mrad. For further power scaling wavelength stabilization is crucial. The wavelength is stabilized with only one Volume Bragg Grating (VBG) in front of a base providing the very same feedback to all of the laser diodes. This results in a bandwidth of < 0.5 nm and a wavelength stability of better than 250 MHz over one hour. Dense spectral combination with dichroic mirrors and narrow channel spacing allows us to combine multiple wavelength channels, resulting in a 2 kW laser module with a BPP better than 7.5 mm*mrad, which can easily coupled into a 100 μm fiber and 0.15 NA.

Versatile Indolocarbazole-Isomer Derivatives as Highly Emissive Emitters and Ideal Hosts for Thermally Activated Delayed Fluorescent OLEDs with Alleviated Efficiency Roll-Off.

PubMed

Zhang, Dongdong; Song, Xiaozeng; Cai, Minghan; Kaji, Hironori; Duan, Lian

2018-02-01

Maintaining high efficiency at high brightness levels is an exigent challenge for real-world applications of thermally activated delayed fluorescent organic light-emitting diodes (TADF-OLEDs). Here, versatile indolocarbazole-isomer derivatives are developed as highly emissive emitters and ideal hosts for TADF-OLEDs to alleviate efficiency roll-off. It is observed that photophysical and electronic properties of these compounds can be well modulated by varying the indolocarbazole isomers. A photoluminescence quantum yield (η PL ) approaching unity and a maximum external quantum efficiency (EQE max ) of 25.1% are obtained for the emitter with indolo[3,2-a]carbazolyl subunit. Remarkably, record-high EQE/power efficiency of 26.2%/69.7 lm W -1 at the brightness level of 5000 cd m -2 with a voltage of only 3.74 V are also obtained using the same isomer as the host in a green TADF-OLED. It is evident that TADF hosts with high η PL values, fast reverse intersystem crossing processes, and balanced charge transport properties may open the path toward roll-off-free TADF-OLEDs. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Atomic Step Formation on Sapphire Surface in Ultra-precision Manufacturing

PubMed Central

Wang, Rongrong; Guo, Dan; Xie, Guoxin; Pan, Guoshun

2016-01-01

Surfaces with controlled atomic step structures as substrates are highly relevant to desirable performances of materials grown on them, such as light emitting diode (LED) epitaxial layers, nanotubes and nanoribbons. However, very limited attention has been paid to the step formation in manufacturing process. In the present work, investigations have been conducted into this step formation mechanism on the sapphire c (0001) surface by using both experiments and simulations. The step evolutions at different stages in the polishing process were investigated with atomic force microscopy (AFM) and high resolution transmission electron microscopy (HRTEM). The simulation of idealized steps was constructed theoretically on the basis of experimental results. It was found that (1) the subtle atomic structures (e.g., steps with different sawteeth, as well as steps with straight and zigzag edges), (2) the periodicity and (3) the degree of order of the steps were all dependent on surface composition and miscut direction (step edge direction). A comparison between experimental results and idealized step models of different surface compositions has been made. It has been found that the structure on the polished surface was in accordance with some surface compositions (the model of single-atom steps: Al steps or O steps). PMID:27444267

Atomic Step Formation on Sapphire Surface in Ultra-precision Manufacturing

NASA Astrophysics Data System (ADS)

Wang, Rongrong; Guo, Dan; Xie, Guoxin; Pan, Guoshun

2016-07-01

Surfaces with controlled atomic step structures as substrates are highly relevant to desirable performances of materials grown on them, such as light emitting diode (LED) epitaxial layers, nanotubes and nanoribbons. However, very limited attention has been paid to the step formation in manufacturing process. In the present work, investigations have been conducted into this step formation mechanism on the sapphire c (0001) surface by using both experiments and simulations. The step evolutions at different stages in the polishing process were investigated with atomic force microscopy (AFM) and high resolution transmission electron microscopy (HRTEM). The simulation of idealized steps was constructed theoretically on the basis of experimental results. It was found that (1) the subtle atomic structures (e.g., steps with different sawteeth, as well as steps with straight and zigzag edges), (2) the periodicity and (3) the degree of order of the steps were all dependent on surface composition and miscut direction (step edge direction). A comparison between experimental results and idealized step models of different surface compositions has been made. It has been found that the structure on the polished surface was in accordance with some surface compositions (the model of single-atom steps: Al steps or O steps).

New dual-curvature microlens array with a high fill-factor for organic light emitting diode modules

NASA Astrophysics Data System (ADS)

Lin, Tsung-Hung; Yang, Hsiharng; Chao, Ching-Kong; Shui, Hung-Chi

2013-09-01

A new method for fabricating a novel dual-curvature microlens array with a high fill-factor using proximity printing in a lithography process is reported. The lens shapes include dual-curvature, which is a novel shape composed of triangles and hexagons. We utilized UV proximity printing by controlling a printing gap between the mask and substrate. The designed high density microlens array pattern can fabricate a dual-curvature microlens array with a high fill-factor in a photoresist material. It is due to the UV light diffraction which deflects away from the aperture edges and produces a certain exposure in the photoresist material outside the aperture edges. A dual-curvature microlens array with a height ratio of 0.48 can boost axial luminance up to 22%. Therefore, the novel dual-curvature microlens array offers an economical solution for increasing the luminance of organic light emitting diodes.

Photon number amplification/duplication through parametric conversion

NASA Technical Reports Server (NTRS)

Dariano, G. M.; Macchiavello, C.; Paris, M.

1993-01-01

The performance of parametric conversion in achieving number amplification and duplication is analyzed. It is shown that the effective maximum gains G(sub *) remain well below their integer ideal values, even for large signals. Correspondingly, one has output Fano factors F(sub *) which are increasing functions of the input photon number. On the other hand, in the inverse (deamplifier/recombiner) operating mode quasi-ideal gains G(sub *) and small factors F(sub *) approximately equal to 10 percent are obtained. Output noise and non-ideal gains are ascribed to spontaneous parametric emission.

Solid state neutron dosimeter for space applications

NASA Technical Reports Server (NTRS)

Entine, Gerald; Nagargar, Vivek; Sharif, Daud

1990-01-01

Personnel engaged in space flight are exposed to significant flux of high energy neutrons arising from both primary and secondary sources of ionizing radiation. Presently, there exist no compact neutron sensor capable of being integrated in a flight instrument to provide real time measurement of this radiation flux. A proposal was made to construct such an instrument using special PIN silicon diode which has the property of being insensitive to the other forms of ionizing radiation. Studies were performed to determine the design and construction of a better reading system to allow the PIN diode to be read with high precision. The physics of the device was studied, especially with respect to those factors which affect the sensitivity and reproducibility of the neutron response. This information was then used to develop methods to achieve high sensitivity at low neutron doses. The feasibility was shown of enhancing the PIN diode sensitivity to make possible the measurement of the low doses of neutrons encountered in space flights. The new PIN diode will make possible the development of a very compact, accurate, personal neutron dosimeter.

Advanced chip designs and novel cooling techniques for brightness scaling of industrial, high power diode laser bars

NASA Astrophysics Data System (ADS)

Heinemann, S.; McDougall, S. D.; Ryu, G.; Zhao, L.; Liu, X.; Holy, C.; Jiang, C.-L.; Modak, P.; Xiong, Y.; Vethake, T.; Strohmaier, S. G.; Schmidt, B.; Zimer, H.

2018-02-01

The advance of high power semiconductor diode laser technology is driven by the rapidly growing industrial laser market, with such high power solid state laser systems requiring ever more reliable diode sources with higher brightness and efficiency at lower cost. In this paper we report simulation and experimental data demonstrating most recent progress in high brightness semiconductor laser bars for industrial applications. The advancements are in three principle areas: vertical laser chip epitaxy design, lateral laser chip current injection control, and chip cooling technology. With such improvements, we demonstrate disk laser pump laser bars with output power over 250W with 60% efficiency at the operating current. Ion implantation was investigated for improved current confinement. Initial lifetime tests show excellent reliability. For direct diode applications <1 um smile and >96% polarization are additional requirements. Double sided cooling deploying hard solder and optimized laser design enable single emitter performance also for high fill factor bars and allow further power scaling to more than 350W with 65% peak efficiency with less than 8 degrees slow axis divergence and high polarization.

Robotic radiosurgery system patient-specific QA for extracranial treatments using the planar ion chamber array and the cylindrical diode array.

PubMed

Lin, Mu-Han; Veltchev, Iavor; Koren, Sion; Ma, Charlie; Li, Jinsgeng

2015-07-08

Robotic radiosurgery system has been increasingly employed for extracranial treatments. This work is aimed to study the feasibility of a cylindrical diode array and a planar ion chamber array for patient-specific QA with this robotic radiosurgery system and compare their performance. Fiducial markers were implanted in both systems to enable image-based setup. An in-house program was developed to postprocess the movie file of the measurements and apply the beam-by-beam angular corrections for both systems. The impact of noncoplanar delivery was then assessed by evaluating the angles created by the incident beams with respect to the two detector arrangements and cross-comparing the planned dose distribution to the measured ones with/without the angular corrections. The sensitivity of detecting the translational (1-3 mm) and the rotational (1°-3°) delivery errors were also evaluated for both systems. Six extracranial patient plans (PTV 7-137 cm³) were measured with these two systems and compared with the calculated doses. The plan dose distributions were calculated with ray-tracing and the Monte Carlo (MC) method, respectively. With 0.8 by 0.8 mm² diodes, the output factors measured with the cylindrical diode array agree better with the commissioning data. The maximum angular correction for a given beam is 8.2% for the planar ion chamber array and 2.4% for the cylindrical diode array. The two systems demonstrate a comparable sensitivity of detecting the translational targeting errors, while the cylindrical diode array is more sensitive to the rotational targeting error. The MC method is necessary for dose calculations in the cylindrical diode array phantom because the ray-tracing algorithm fails to handle the high-Z diodes and the acrylic phantom. For all the patient plans, the cylindrical diode array/ planar ion chamber array demonstrate 100% / > 92% (3%/3 mm) and > 96% / ~ 80% (2%/2 mm) passing rates. The feasibility of using both systems for robotic radiosurgery system patient-specific QA has been demonstrated. For gamma evaluation, 2%/2 mm criteria for cylindrical diode array and 3%/3 mm criteria for planar ion chamber array are suggested. The customized angular correction is necessary as proven by the improved passing rate, especially with the planar ion chamber array system.

Genetic and environmental influences on thin-ideal internalization across puberty and preadolescent, adolescent, and young adult development.

PubMed

Suisman, Jessica L; Thompson, J Kevin; Keel, Pamela K; Burt, S Alexandra; Neale, Michael; Boker, Steven; Sisk, Cheryl; Klump, Kelly L

2014-11-01

Mean-levels of thin-ideal internalization increase during adolescence and pubertal development, but it is unknown whether these phenotypic changes correspond to developmental changes in etiological (i.e., genetic and environmental) risk. Given the limited knowledge on risk for thin-ideal internalization, research is needed to guide the identification of specific types of risk factors during critical developmental periods. The present twin study examined genetic and environmental influences on thin-ideal internalization across adolescent and pubertal development. Participants were 1,064 female twins (ages 8-25 years) from the Michigan State University Twin Registry. Thin-ideal internalization and pubertal development were assessed using self-report questionnaires. Twin moderation models were used to examine if age and/or pubertal development moderate genetic and environmental influences on thin-ideal internalization. Phenotypic analyses indicated significant increases in thin-ideal internalization across age and pubertal development. Twin models suggested no significant differences in etiologic effects across development. Nonshared environmental influences were most important in the etiology of thin-ideal internalization, with genetic, shared environmental, and nonshared environmental accounting for approximately 8%, 15%, and 72%, respectively, of the total variance. Despite mean-level increases in thin-ideal internalization across development, the relative influence of genetic versus environmental risk did not differ significantly across age or pubertal groups. The majority of variance in thin-ideal internalization was accounted for by environmental factors, suggesting that mean-level increases in thin-ideal internalization may reflect increases in the magnitude/strength of environmental risk across this period. Replication is needed, particularly with longitudinal designs that assess thin-ideal internalization across key developmental phases. © 2014 Wiley Periodicals, Inc.

Genetic and Environmental Influences on Thin-Ideal Internalization across Puberty and Pre-Adolescent, Adolescent, and Young Adult Development

PubMed Central

Suisman, Jessica L.; Thompson, J. Kevin; Keel, Pamela K.; Burt, S. Alexandra; Neale, Michael; Boker, Steven; Sisk, Cheryl; Klump, Kelly L.

2014-01-01

Objective Mean-levels of thin-ideal internalization increase during adolescence and pubertal development, but it is unknown whether these phenotypic changes correspond to developmental changes in etiological (i.e., genetic and environmental) risk. Given the limited knowledge on risk for thin-ideal internalization, research is needed to guide the identification of specific types of risk factors during critical developmental periods. The present twin study examined genetic and environmental influences on thin-ideal internalization across adolescent and pubertal development. Method Participants were 1,064 female twins (ages 8–25 years) from the Michigan State University Twin Registry. Thin-ideal internalization and pubertal development were assessed using self-report questionnaires. Twin moderation models were used to examine if age and/or pubertal development moderate genetic and environmental influences on thin-ideal internalization. Results Phenotypic analyses indicated significant increases in thin-ideal internalization across age and pubertal development. Twin models suggested no significant differences in etiologic effects across development. Nonshared environmental influences were most important in the etiology of thin-ideal internalization, with genetic, shared environmental, and nonshared environmental accounting for approximately 8%, 15%, and 72%, respectively, of the total variance. Discussion Despite mean-level increases in thin-ideal internalization across development, the relative influence of genetic versus environmental risk did not differ significantly across age or pubertal groups. The majority of variance in thin-ideal internalization was accounted for by environmental factors, suggesting that mean-level increases in thin-ideal internalization may reflect increases in the magnitude/strength of environmental risk across this period. Replication is needed, particularly with longitudinal designs that assess thin-ideal internalization across key developmental phases. PMID:24962440

Spectra of surface plasmon polariton enhanced electroluminescence from electroformed Al-Al{sub 2}O{sub 3}-Ag diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hickmott, T. W.

Narrow band-pass filters have been used to measure the spectral distribution of electroluminescent photons with energies between 1.8 eV and 3.0 eV from electroformed Al-Al{sub 2}O{sub 3}-Ag diodes with anodic Al{sub 2}O{sub 3} thicknesses between 12 nm and 18 nm. Electroforming of metal-insulator-metal (MIM) diodes is a non-destructive dielectric breakdown that results in a conducting channel in the insulator and changes the initial high resistance of the MIM diode to a low resistance state. It is a critical step in the development of resistive-switching memories that utilize MIM diodes as the active element. Electroforming of Al-Al{sub 2}O{sub 3}-Ag diodes in vacuum results in voltage-controlledmore » negative resistance (VCNR) in the current-voltage (I-V) characteristics. Electroluminescence (EL) and electron emission into vacuum (EM) develop simultaneously with the current increase that results in VCNR in the I-V characteristics. EL is due to recombination of electrons injected at the Al-Al{sub 2}O{sub 3} interface with radiative defect centers in Al{sub 2}O{sub 3}. Measurements of EL photons between 1.8 eV and 3.0 eV using a wide band-pass filter showed that EL intensity is exponentially dependent on Al{sub 2}O{sub 3} thickness for Al-Al{sub 2}O{sub 3}-Ag diodes between 12 nm and 20 nm thick. Enhanced El intensity in the thinnest diodes is attributed to an increase in the spontaneous emission rate of recombination centers due to high electromagnetic fields generated in Al{sub 2}O{sub 3} when EL photons interact with electrons in Ag or Al to form surface plasmon polaritons at the Al{sub 2}O{sub 3}-Ag or Al{sub 2}O{sub 3}-Al interface. El intensity is a maximum at 2.0–2.2 eV for Al-Al{sub 2}O{sub 3}-Ag diodes with Al{sub 2}O{sub 3} thicknesses between 12 nm and 18 nm. EL in diodes with 12 nm or 14 nm of Al{sub 2}O{sub 3} is enhanced by factors of 8–10 over EL from a diode with 18 nm of Al{sub 2}O{sub 3}. The extent of EL enhancement in the thinnest diodes can vary significantly between samples. A narrow band of recombination centers was found in one Al-Al{sub 2}O{sub 3}-Ag diode with 12 nm of Al{sub 2}O{sub 3}; it had EL intensity 100 times greater at 2.15 eV than the diode with 18 nm of Al{sub 2}O{sub 3}. EL intensity for photons with energies greater than 2.6 eV is nearly the same for all diodes.« less

Manipulation of the electroluminescence of organic light-emitting diodes via fringe fields from patterned magnetic domains

NASA Astrophysics Data System (ADS)

Harmon, N. J.; Wohlgenannt, M.; Flatté, M. E.

2016-12-01

We predict very large changes in the room-temperature electroluminescence of thermally-activated delayed fluorescence organic light emitting diodes near patterned ferromagnetic films. These effects exceed the changes in a uniform magnetic field by as much as a factor of two. We describe optimal ferromagnetic film patterns for enhancing the electroluminescence. A full theory of the spin-mixing processes in exciplex recombination and how they are affected by hyperfine fields, spin-orbit effects, and ferromagnetic fringe field effects is introduced. These spin-mixing processes are used to describe the effect of magnetic domain structures on the luminescence in various regimes. This provides a method of enhancing light emission rates from exciplexes and also a means of efficiently coupling information encoded in the magnetic domains to organic light emitting diode emission.

Manipulation of the electroluminescence of organic light-emitting diodes via fringe fields from patterned magnetic domains

DOE Office of Scientific and Technical Information (OSTI.GOV)

Harmon, N. J.; Wohlgenannt, M.; Flatté, M. E.

We predict very large changes in the room-temperature electroluminescence of thermally-activated delayed fluorescence organic light emitting diodes near patterned ferromagnetic films. These effects exceed the changes in a uniform magnetic field by as much as a factor of two. We describe optimal ferromagnetic film patterns for enhancing the electroluminescence. A full theory of the spin-mixing processes in exciplex recombination and how they are affected by hyperfine fields, spin-orbit effects, and ferromagnetic fringe field effects is introduced. These spin-mixing processes are used to describe the effect of magnetic domain structures on the luminescence in various regimes. This provides a method ofmore » enhancing light emission rates from exciplexes and also a means of efficiently coupling information encoded in the magnetic domains to organic light emitting diode emission« less

Manipulation of the electroluminescence of organic light-emitting diodes via fringe fields from patterned magnetic domains

DOE PAGES

Harmon, N. J.; Wohlgenannt, M.; Flatté, M. E.

2016-12-12

We predict very large changes in the room-temperature electroluminescence of thermally-activated delayed fluorescence organic light emitting diodes near patterned ferromagnetic films. These effects exceed the changes in a uniform magnetic field by as much as a factor of two. We describe optimal ferromagnetic film patterns for enhancing the electroluminescence. A full theory of the spin-mixing processes in exciplex recombination and how they are affected by hyperfine fields, spin-orbit effects, and ferromagnetic fringe field effects is introduced. These spin-mixing processes are used to describe the effect of magnetic domain structures on the luminescence in various regimes. This provides a method ofmore » enhancing light emission rates from exciplexes and also a means of efficiently coupling information encoded in the magnetic domains to organic light emitting diode emission« less

Continuous-wave laser operation at 743 and 753 nm based on a diode-pumped c-cut Pr:YAlO3 crystal

NASA Astrophysics Data System (ADS)

Lin, Xiuji; Huang, Xiaoxu; Liu, Bin; Xu, Bin; Xu, Huiying; Cai, Zhiping; Xu, Xiaodong; Li, Dongzhen; Liu, Jian; Xu, Jun

2018-02-01

We report on blue-diode-pumped continuous-wave Pr:YAlO3 (YAP) crystal lasers. Using a b-cut sample, a maximum output power of 181 mW is achieved at ∼747 nm with slope efficiency of 12.7% with respect to the absorbed power. Using a c-cut sample, a dual-wavelength laser at ∼743 and ∼753 nm is obtained with a total maximum output power of 72 mW by using the blue diode pumping, for the first time to our knowledge. These laser emissions are all linearly polarized and M2 factors of these output laser beams are also measured. YAP is experimentally verified to be one of effective oxide hosts for Pr-doped visible laser operation besides its fluoride counterparts.

Stacked Device of Polymer Light-Emitting Diode Driven by Metal-Base Organic Transistor

NASA Astrophysics Data System (ADS)

Yoneda, Kazuhiro; Nakayama, Ken-ichi; Yokoyama, Masaaki

2008-02-01

We fabricated a new light-emitting device that combined a polymer light-emitting diode (PLED) and a vertical-type metal-base organic transistor (MBOT) through a floating electrode. By employing a layered floating electrode of Mg:Ag/Au, the MBOT on the PLED was operated successfully and a current amplification factor of approximately 20 was observed. The PLED luminescence exceeding 100 cd/m2 can be modulated using the MBOT with a low base voltage (2.8 V) and VCC (8 V). The emission contrast (on/off ratio) was improved with insertion of an insulating layer under the base, and the cut-off frequency was estimated to be 8 kHz. This device is expected to be a promising driving system of organic light-emitting diode (OLED), realizing low voltage and high numerical aperture.

Monte Carlo and experimental determination of correction factors for gamma knife perfexion small field dosimetry measurements

NASA Astrophysics Data System (ADS)

Zoros, E.; Moutsatsos, A.; Pappas, E. P.; Georgiou, E.; Kollias, G.; Karaiskos, P.; Pantelis, E.

2017-09-01

Detector-, field size- and machine-specific correction factors are required for precise dosimetry measurements in small and non-standard photon fields. In this work, Monte Carlo (MC) simulation techniques were used to calculate the k{{Qmsr},{{Q}0}}{{fmsr},{{f}ref}} and k{{Qclin},{{Q}msr}}{{fclin},{{f}msr}} correction factors for a series of ionization chambers, a synthetic microDiamond and diode dosimeters, used for reference and/or output factor (OF) measurements in the Gamma Knife Perfexion photon fields. Calculations were performed for the solid water (SW) and ABS plastic phantoms, as well as for a water phantom of the same geometry. MC calculations for the k{{Qclin},{{Q}msr}}{{fclin},{{f}msr}} correction factors in SW were compared against corresponding experimental results for a subset of ionization chambers and diode detectors. Reference experimental OF data were obtained through the weighted average of corresponding measurements using TLDs, EBT-2 films and alanine pellets. k{{Qmsr},{{Q}0}}{{fmsr},{{f}ref}} values close to unity (within 1%) were calculated for most of ionization chambers in water. Greater corrections of up to 6.0% were observed for chambers with relatively large air-cavity dimensions and steel central electrode. A phantom correction of 1.006 and 1.024 (breaking down to 1.014 from the ABS sphere and 1.010 from the accompanying ABS phantom adapter) were calculated for the SW and ABS phantoms, respectively, adding up to k{{Qmsr},{{Q}0}}{{fmsr},{{f}ref}} corrections in water. Both measurements and MC calculations for the diode and microDiamond detectors resulted in lower than unit k{{Qclin},{{Q}msr}}{{fclin},{{f}msr}} correction factors, due to their denser sensitive volume and encapsulation materials. In comparison, higher than unit k{{Qclin},{{Q}msr}}{{fclin},{{f}msr}} results for the ionization chambers suggested field size depended dose underestimations (being significant for the 4 mm field), with magnitude depending on the combination of contradicting phenomena associated with volume averaging and electron fluence perturbations. Finally, the presence of 0.5 mm air-gap between the diodes’ frontal surface and their phantom-inserts may considerably influence OF measurements, reaching 4.6% for the Razor diode.

LASER RESENSITIZATION OF MEDICALLY UNRESPONSIVE NEOVASCULAR AGE-RELATED MACULAR DEGENERATION: Efficacy and Implications.

PubMed

Luttrull, Jeffrey K; Chang, David B; Margolis, Benjamin W L; Dorin, Giorgio; Luttrull, David K

2015-06-01

Drug tolerance is the most common cause of treatment failure in neovascular age-related macular degeneration. "Low-intensity/high-density" subthreshold diode micropulse laser (SDM) has been reported effective for a number of retinal disorders without adverse effects. It has been proposed that SDM normalizes retinal pigment epithelial function. On this basis, it has been postulated that SDM treatment might restore responsiveness to anti-vascular endothelial growth factor drugs in drug-tolerant eyes. Subthreshold diode micropulse laser treatment was performed in consecutive eyes unresponsive to all anti-vascular endothelial growth factor drugs, including at least three consecutive ineffective aflibercept injections. Monthly aflibercept was resumed 1 month after SDM treatment. Thirteen eyes of 12 patients, aged 73 to 97 years (average, 84 years), receiving 16 to 67 (average, 34) anti-vascular endothelial growth factor injections before SDM treatment were included and followed for 3 months to 7 months (average, 5 months) after SDM treatment. After SDM treatment and resumption of aflibercept, 92% (12 of 13) of eyes improved, with complete resolution of macular exudation in 69% (9 of 13). Visual acuity remained unchanged. Central and maximum macular thicknesses significantly improved. Subthreshold diode micropulse laser treatment restored drug response in drug-tolerant eyes with neovascular age-related macular degeneration. Based on these findings, a theory of SDM action is proposed, suggesting a wider role for SDM as retinal reparative/protective therapy.

Cognitive Distortions Associated with Imagination of the Thin Ideal: Validation of the Thought-Shape Fusion Body Questionnaire (TSF-B)

PubMed Central

Wyssen, Andrea; Debbeler, Luka J.; Meyer, Andrea H.; Coelho, Jennifer S.; Humbel, Nadine; Schuck, Kathrin; Lennertz, Julia; Messerli-Bürgy, Nadine; Biedert, Esther; Trier, Stephan N.; Isenschmid, Bettina; Milos, Gabriella; Whinyates, Katherina; Schneider, Silvia; Munsch, Simone

2017-01-01

Thought-shape fusion (TSF) describes the experience of body-related cognitive distortions associated with eating disorder (ED) pathology. In the laboratory TSF has been activated by thoughts about fattening/forbidden foods and thin ideals. This study aims at validating a questionnaire to assess the trait susceptibility to TSF (i.e., body-related cognitive distortions) associated with the imagination of thin ideals, and developing an adapted version of the original TSF trait questionnaire, the Thought-Shape Fusion Body Questionnaire (TSF-B). Healthy control women (HC, n = 317) and women diagnosed with subthreshold and clinical EDs (n = 243) completed an online-questionnaire. The factor structure of the TSF-B questionnaire was examined using exploratory (EFA) and subsequent confirmatory factor analysis (CFA). EFA pointed to a two-factor solution, confirmed by CFA. Subscale 1 was named Imagination of thin ideals, containing five items referring to the imagination of female thin ideals. Subscale 2 was named Striving for own thin ideal, with seven items about pursuing/abandoning attempts to reach one’s own thin ideal. The total scale and both subscales showed good convergent validity, excellent reliability, and good ability to discriminate between individuals with subthreshold/clinical EDs and HCs. Results indicate that cognitive distortions are also related to the imagination of thin ideals, and are associated with ED pathology. With two subscales, the TSF-B trait questionnaire appropriately measures this construct. Future studies should clarify whether TSF-B is predictive for the development and course of EDs. Assessing cognitive distortions with the TSF-B questionnaire could improve understanding of EDs and stimulate the development of cognitively oriented interventions. Clinical Trial Registration Number: DRKS-ID: DRKS00005709. PMID:29312059

Stability of DIII-D high-performance, negative central shear discharges

NASA Astrophysics Data System (ADS)

Hanson, J. M.; Berkery, J. W.; Bialek, J.; Clement, M.; Ferron, J. R.; Garofalo, A. M.; Holcomb, C. T.; La Haye, R. J.; Lanctot, M. J.; Luce, T. C.; Navratil, G. A.; Olofsson, K. E. J.; Strait, E. J.; Turco, F.; Turnbull, A. D.

2017-05-01

Tokamak plasma experiments on the DIII-D device (Luxon et al 2005 Fusion Sci. Tech. 48 807) demonstrate high-performance, negative central shear (NCS) equilibria with enhanced stability when the minimum safety factor {{q}\\text{min}} exceeds 2, qualitatively confirming theoretical predictions of favorable stability in the NCS regime. The discharges exhibit good confinement with an L-mode enhancement factor H 89  =  2.5, and are ultimately limited by the ideal-wall external kink stability boundary as predicted by ideal MHD theory, as long as tearing mode (TM) locking events, resistive wall modes (RWMs), and internal kink modes are properly avoided or controlled. Although the discharges exhibit rotating TMs, locking events are avoided as long as a threshold minimum safety factor value {{q}\\text{min}}>2 is maintained. Fast timescale magnetic feedback control ameliorates RWM activity, expanding the stable operating space and allowing access to {β\\text{N}} values approaching the ideal-wall limit. Quickly growing and rotating instabilities consistent with internal kink mode dynamics are encountered when the ideal-wall limit is reached. The RWM events largely occur between the no- and ideal-wall pressure limits predicted by ideal MHD. However, evaluating kinetic contributions to the RWM dispersion relation results in a prediction of passive stability in this regime due to high plasma rotation. In addition, the ideal MHD stability analysis predicts that the ideal-wall limit can be further increased to {β\\text{N}}>4 by broadening the current profile. This path toward improved stability has the potential advantage of being compatible with the bootstrap-dominated equilibria envisioned for advanced tokamak (AT) fusion reactors.

Pulsed and cw laser oscillations in LiF:F-2 color center crystal under laser diode pumping.

PubMed

Basiev, Tasoltan T; Vassiliev, Sergey V; Konjushkin, Vasily A; Gapontsev, Valentin P

2006-07-15

Continuous-wave laser oscillations in LiF:F-2 crystal optically pumped by a laser diode at 970 nm were demonstrated for what is believed to be the first time. The slope efficiency of 14% and conversion efficiency of 5.5% were achieved for 80 micros pump pulse duration and 5 Hz pulse repetition rate. An efficiency twice as low was measured at a 6.25 kHz pulse repetition rate (50% off-duty factor) and in cw mode of laser operation.

Optical design of tunnel lighting with white light-emitting diodes.

PubMed

Tsai, Ming-Shiou; Lee, Xuan-Hao; Lo, Yi-Chien; Sun, Ching-Cherng

2014-10-10

This paper presents a tunnel lighting design consisting of a cluster light-emitting diode and a free-form lens. Most of the energy emitted from the proposed luminaire is transmitted onto the surface of the road in front of drivers, and the probability that that energy is emitted directly into drivers' eyes is low. Compared with traditional fluorescent lamps, the proposed luminaire, of which the optical utilization factor, optical efficiency, and uniformity are, respectively, 44%, 92.5%, and 0.72, exhibits favorable performance in energy saving, glare reduction, and traffic safety.

Effect of a Dissonance-Based Prevention Program on Risk for Eating Disorder Onset in the Context of Eating Disorder Risk Factors

PubMed Central

Rohde, Paul; Gau, Jeff; Shaw, Heather

2013-01-01

Test (a) whether a dissonance-based eating disorder prevention program that reduces thin-ideal internalization mitigates the effects of risk factors for eating disorder onset and (b) whether the risk factors moderate the effects of this intervention on risk for eating disorder onset, to place the effects of this intervention within the context of established risk factors. Female adolescents (N=481) with body image concerns were randomized to the dissonance-based program, healthy weight control program, expressive writing control condition, or assessment-only control condition. Denial of costs of pursuing the thin-ideal was the most potent risk factor for eating disorder onset during the 3-year follow-up (OR=5.0). The dissonance program mitigated the effect of this risk factor. For participants who did not deny costs of pursuing the thin-ideal, emotional eating and externalizing symptoms increased risk for eating disorder onset. Negative affect attenuated the effects of each of the active interventions in this trial. Results imply that this brief prevention program offsets the risk conveyed by the most potent risk factor for eating disorder onset in this sample, implicate three vulnerability pathways to eating pathology involving thin-ideal pursuit, emotional eating, and externalizing symptoms, and suggest that negative affect mitigates the effects of eating disorder prevention programs. PMID:21975593

A study on the steady-state solutions of a relativistic Bursian diode in the presence of a transverse magnetic field

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pramanik, Sourav; Chakrabarti, Nikhil; Kuznetsov, V. I.

2016-08-15

A comprehensive study on the steady states of a planar vacuum diode driven by a cold relativistic electron beam in the presence of an external transverse magnetic field is presented. The regimes, where no electrons are turned around by the external magnetic field and where they are reflected back to the emitter by the magnetic field, are both considered in a generalized way. The problem is solved by two methods: with the Euler and the Lagrange formulation. Taking non-relativistic limit, the solutions are compared with the similar ones which were obtained for the Bursian diode with a non-relativistic electron beammore » in previous work [Pramanik et al., Phys. Plasmas 22, 112108 (2015)]. It is shown that, at a moderate value of the relativistic factor of the injected beam, the region of the ambiguous solutions located to the right of the SCL bifurcation point (space charge limit) in the non-relativistic regime disappears. In addition, the dependencies of the characteristic bifurcation points and the transmitted current on the Larmor frequency as well as on the relativistic factor are explored.« less

Influences of wide-angle and multi-beam interference on the chromaticity and efficiency of top-emitting white organic light-emitting diodes

NASA Astrophysics Data System (ADS)

Deng, Lingling; Zhou, Hongwei; Chen, Shufen; Shi, Hongying; Liu, Bin; Wang, Lianhui; Huang, Wei

2015-02-01

Wide-angle interference (WI) and multi-beam interference (MI) in microcavity are analyzed separately to improve chromaticity and efficiency of the top-emitting white organic light-emitting diodes (TWOLEDs). A classic electromagnetic theory is used to calculate the resonance intensities of WI and MI in top-emitting organic light-emitting diodes (TOLEDs) with influence factors (e.g., electrodes and exciton locations) being considered. The role of WI on the performances of TOLEDs is revealed through using δ-doping technology and comparing blue and red EML positions in top-emitting and bottom-emitting devices. The blue light intensity significantly increases and the chromaticity of TWOLEDs is further improved with the use of enhanced WI (the blue emitting layer moving towards the reflective electrode) in the case of a weak MI. In addition, the effect of the thicknesses of light output layer and carrier transport layers on WI and MI are also investigated. Apart from the microcavity effect, other factors, e.g., carrier balance and carrier recombination regions are considered to obtain TWOLEDs with high efficiency and improved chromaticity near white light equal-energy point.

Influences of wide-angle and multi-beam interference on the chromaticity and efficiency of top-emitting white organic light-emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Deng, Lingling; Zhou, Hongwei; Chen, Shufen, E-mail: iamsfchen@njupt.edu.cn

Wide-angle interference (WI) and multi-beam interference (MI) in microcavity are analyzed separately to improve chromaticity and efficiency of the top-emitting white organic light-emitting diodes (TWOLEDs). A classic electromagnetic theory is used to calculate the resonance intensities of WI and MI in top-emitting organic light-emitting diodes (TOLEDs) with influence factors (e.g., electrodes and exciton locations) being considered. The role of WI on the performances of TOLEDs is revealed through using δ-doping technology and comparing blue and red EML positions in top-emitting and bottom-emitting devices. The blue light intensity significantly increases and the chromaticity of TWOLEDs is further improved with the usemore » of enhanced WI (the blue emitting layer moving towards the reflective electrode) in the case of a weak MI. In addition, the effect of the thicknesses of light output layer and carrier transport layers on WI and MI are also investigated. Apart from the microcavity effect, other factors, e.g., carrier balance and carrier recombination regions are considered to obtain TWOLEDs with high efficiency and improved chromaticity near white light equal-energy point.« less

Ideal MHD stability and performance of ITER steady-state scenarios with ITBs

NASA Astrophysics Data System (ADS)

Poli, F. M.; Kessel, C. E.; Chance, M. S.; Jardin, S. C.; Manickam, J.

2012-06-01

Non-inductive steady-state scenarios on ITER will need to operate with internal transport barriers (ITBs) in order to reach adequate fusion gain at typical currents of 9 MA. The large pressure gradients at the location of the internal barrier are conducive to the development of ideal MHD instabilities that may limit the plasma performance and may lead to plasma disruptions. Fully non-inductive scenario simulations with five combinations of heating and current drive sources are presented in this work, with plasma currents in the range 7-10 MA. For each configuration the linear, ideal MHD stability is analysed for variations of the Greenwald fraction and of the pressure peaking factor around the operating point, aiming at defining an operational space for stable, steady-state operations at optimized performance. It is shown that plasmas with lower hybrid heating and current drive maintain the minimum safety factor above 1.5, which is desirable in steady-state operations to avoid neoclassical tearing modes. Operating with moderate ITBs at 2/3 of the minor radius, these plasmas have a minimum safety factor above 2, are ideal MHD stable and reach Q ≳ 5 operating above the ideal no-wall limit.

Sociocultural pressures, thin-ideal internalization, self-objectification, and body dissatisfaction: could feminist beliefs be a moderating factor?

PubMed

Myers, Taryn A; Crowther, Janis H

2007-09-01

Theory and research suggest that sociocultural pressures, thin-ideal internalization, and self-objectification are associated with body dissatisfaction, while feminist beliefs may serve a protective function. This research examined thin-ideal internalization and self-objectification as mediators and feminist beliefs as a moderator in the relationship between sociocultural pressures to meet the thin-ideal and body dissatisfaction. Female undergraduate volunteers (N=195) completed self-report measures assessing sociocultural influences, feminist beliefs, thin-ideal internalization, self-objectification, and body dissatisfaction. Multisample structural equation modeling showed that feminist beliefs moderate the relationship between media awareness and thin-ideal internalization, but not the relationship between social influence and thin-ideal internalization. Research and clinical implications of these findings are discussed.

Demographic Factors Influencing Selection of an Ideal Graduate Institution: A Literature Review with Recommendations for Implementation

ERIC Educational Resources Information Center

Lei, Simon A.; Chuang, Ning-Kuang

2010-01-01

Choosing a graduate (masters and doctoral) program of study at an ideal institution is probably one of the most important decisions students and their family will make. The graduate college selection involves identifying the most critical academic and non-academic factors, and weighing their importance against the large quantity of choices…

Sharp Truncation of an Electric Field: An Idealized Model that Warrants Caution

NASA Astrophysics Data System (ADS)

Tu, Hong; Zhu, Jiongming

2016-03-01

In physics, idealized models are often used to simplify complex situations. The motivation of the idealization is to make the real complex system tractable by adopting certain simplifications. In this treatment some unnecessary, negligible aspects are stripped away (so-called Aristotelian idealization), or some deliberate distortions are involved (so-called Galilean idealization). The most important principle in using an idealized model is to make sure that all the neglected aspects do not affect our analysis or result. Point charges, rigid bodies, simple pendulums, frictionless planes, and isolated systems are all frequently used idealized models. However, when they are applied to certain uncommon models, extra precautions should be taken. The possibilities and necessities of adopting the idealizations have to be considered carefully. Sometimes some factors neglected or ignored in the idealization could completely change the result, even make the treatment unphysical and conclusions unscientific.

SU-C-304-07: Are Small Field Detector Correction Factors Strongly Dependent On Machine-Specific Characteristics?

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mathew, D; Tanny, S; Parsai, E

2015-06-15

Purpose: The current small field dosimetry formalism utilizes quality correction factors to compensate for the difference in detector response relative to dose deposited in water. The correction factors are defined on a machine-specific basis for each beam quality and detector combination. Some research has suggested that the correction factors may only be weakly dependent on machine-to-machine variations, allowing for determinations of class-specific correction factors for various accelerator models. This research examines the differences in small field correction factors for three detectors across two Varian Truebeam accelerators to determine the correction factor dependence on machine-specific characteristics. Methods: Output factors were measuredmore » on two Varian Truebeam accelerators for equivalently tuned 6 MV and 6 FFF beams. Measurements were obtained using a commercial plastic scintillation detector (PSD), two ion chambers, and a diode detector. Measurements were made at a depth of 10 cm with an SSD of 100 cm for jaw-defined field sizes ranging from 3×3 cm{sup 2} to 0.6×0.6 cm{sup 2}, normalized to values at 5×5cm{sup 2}. Correction factors for each field on each machine were calculated as the ratio of the detector response to the PSD response. Percent change of correction factors for the chambers are presented relative to the primary machine. Results: The Exradin A26 demonstrates a difference of 9% for 6×6mm{sup 2} fields in both the 6FFF and 6MV beams. The A16 chamber demonstrates a 5%, and 3% difference in 6FFF and 6MV fields at the same field size respectively. The Edge diode exhibits less than 1.5% difference across both evaluated energies. Field sizes larger than 1.4×1.4cm2 demonstrated less than 1% difference for all detectors. Conclusion: Preliminary results suggest that class-specific correction may not be appropriate for micro-ionization chamber. For diode systems, the correction factor was substantially similar and may be useful for class-specific reference conditions.« less

Properties of a commercial PTW-60019 synthetic diamond detector for the dosimetry of small radiotherapy beams.

PubMed

Lárraga-Gutiérrez, José Manuel; Ballesteros-Zebadúa, Paola; Rodríguez-Ponce, Miguel; García-Garduño, Olivia Amanda; de la Cruz, Olga Olinca Galván

2015-01-21

A CVD based radiation detector has recently become commercially available from the manufacturer PTW-Freiburg (Germany). This detector has a sensitive volume of 0.004 mm(3), a nominal sensitivity of 1 nC Gy(-1) and operates at 0 V. Unlike natural diamond based detectors, the CVD diamond detector reports a low dose rate dependence. The dosimetric properties investigated in this work were dose rate, angular dependence and detector sensitivity and linearity. Also, percentage depth dose, off-axis dose profiles and total scatter ratios were measured and compared against equivalent measurements performed with a stereotactic diode. A Monte Carlo simulation was carried out to estimate the CVD small beam correction factors for a 6 MV photon beam. The small beam correction factors were compared with those obtained from stereotactic diode and ionization chambers in the same irradiation conditions The experimental measurements were performed in 6 and 15 MV photon beams with the following square field sizes: 10 × 10, 5 × 5, 4 × 4, 3 × 3, 2 × 2, 1.5 × 1.5, 1 × 1 and 0.5 × 0.5 cm. The CVD detector showed an excellent signal stability (<0.2%) and linearity, negligible dose rate dependence (<0.2%) and lower response angular dependence. The percentage depth dose and off-axis dose profiles measurements were comparable (within 1%) to the measurements performed with ionization chamber and diode in both conventional and small radiotherapy beams. For the 0.5 × 0.5 cm, the measurements performed with the CVD detector showed a partial volume effect for all the dosimetric quantities measured. The Monte Carlo simulation showed that the small beam correction factors were close to unity (within 1.0%) for field sizes ≥1 cm. The synthetic diamond detector had high linearity, low angular and negligible dose rate dependence, and its response was energy independent within 1% for field sizes from 1.0 to 5.0 cm. This work provides new data showing the performance of the CVD detector compared against a high spatial resolution diode. It also presents a comparison of the CVD small beam correction factors with those of diode and ionization chamber for a 6 MV photon beam.

Application of spherical diodes for megavoltage photon beams dosimetry.

PubMed

Barbés, Benigno; Azcona, Juan D; Burguete, Javier; Martí-Climent, Josep M

2014-01-01

External beam radiation therapy (EBRT) usually uses heterogeneous dose distributions in a given volume. Designing detectors for quality control of these treatments is still a developing subject. The size of the detectors should be small to enhance spatial resolution and ensure low perturbation of the beam. A high uniformity in angular response is also a very important feature in a detector, because it has to measure radiation coming from all the directions of the space. It is also convenient that detectors are inexpensive and robust, especially to perform in vivo measurements. The purpose of this work is to introduce a new detector for measuring megavoltage photon beams and to assess its performance to measure relative dose in EBRT. The detector studied in this work was designed as a spherical photodiode (1.8 mm in diameter). The change in response of the spherical diodes is measured regarding the angle of incidence, cumulated irradiation, and instantaneous dose rate (or dose per pulse). Additionally, total scatter factors for large and small fields (between 1 × 1 cm(2) and 20 × 20 cm(2)) are evaluated and compared with the results obtained from some commercially available ionization chambers and planar diodes. Additionally, the over-response to low energy scattered photons in large fields is investigated using a shielding layer. The spherical diode studied in this work produces a high signal (150 nC/Gy for photons of nominal energy of 15 MV and 160 for 6 MV, after 12 kGy) and its angular dependence is lower than that of planar diodes: less than 5% between maximum and minimum in all directions, and 2% around one of the axis. It also has a moderated variation with accumulated dose (about 1.5%/kGy for 15 MV photons and 0.7%/kGy for 6 MV, after 12 kGy) and a low variation with dose per pulse (± 0.4%), and its behavior is similar to commercial diodes in total scatter factor measurements. The measurements of relative dose using the spherical diode described in this work show its feasibility for the dosimetry of megavoltage photon beams. A particularly important feature is its good angular response in the MV range. They would be good candidates for in vivo dosimetry, and quality assurance of VMAT and tomotherapy, and other modalities with beams irradiating from multiple orientations, such as Cyberknife and ViewRay, with minor modifications.

Controlled carrier screening in p-n NiO/GaN piezoelectric generators by an Al2O3 insertion layer

NASA Astrophysics Data System (ADS)

Johar, Muhammad Ali; Jeong, Dae Kyung; Afifi Hassan, Mostafa; Kang, Jin-Ho; Ha, Jun-Seok; Key Lee, June; Ryu, Sang-Wan

2017-12-01

The performance of a piezoelectric generator (PG) depends significantly on the internal screening process inside the device. As piezoelectric charges appear on both ends of the piezoelectric crystal, internal screening starts to decrease the piezoelectric bias. Therefore, the piezoelectric energy generated by external stress is not fully utilized by external circuit, which is the most challenging aspect of high-efficiency PGs. In this work, the internal screening effect of a NiO/GaN p-n PG was analyzed and controlled with an Al2O3 insertion layer. Internal screening in the p-n diode PG was categorized into free-carrier screening in neutral regions and junction screening due to charge drift across the junction. It was observed that junction screening could be significantly suppressed by inserting an Al2O3 layer and that effect was dominant in a leaky diode PG. With this implementation, the piezoelectric bias of the NiO/GaN PG was improved by a factor of ~100 for high-leakage diodes and a factor of ~1.6 for low-leakage diodes. Consequently, NiO/Al2O3/GaN PGs under a stress of 5 MPa provided a piezoelectric bias of 12.1 V and a current density of 2.25 µA cm-2. The incorporation of a highly resistive Al2O3 layer between p-NiO and n-GaN layers in NiO/GaN heterojunctions provides an efficient means of improving the piezoelectric performance by controlling the internal screening of the piezoelectric field.

Development and optimization of a miniaturized fiber-optic photoplethysmographic sensor

NASA Astrophysics Data System (ADS)

Morley, Aisha; Davenport, John J.; Hickey, Michelle; Phillips, Justin P.

2017-11-01

Photoplethysmography (PPG) is a widely used technique for measuring blood oxygen saturation, commonly using an external pulse oximeter applied to a finger, toe, or earlobe. Previous research has demonstrated the utility of direct monitoring of the oxygen saturation of internal organs, using optical fibers to transmit light between the photodiode/light emitting diode and internal site. However, little research into the optimization and standardization of such a probe has yet been carried out. This research establishes the relationship between fiber separation distance and PPG signal, and between fiber core width and PPG signal. An ideal setup is suggested: 1000-μm fibers at a separation distance of 3 to 3.5 mm, which was found to produce signals around 0.35 V in amplitude with a low variation coefficient.

Precision improvement of frequency-modulated continuous-wave laser ranging system with two auxiliary interferometers

NASA Astrophysics Data System (ADS)

Shi, Guang; Wang, Wen; Zhang, Fumin

2018-03-01

The measurement precision of frequency-modulated continuous-wave (FMCW) laser distance measurement should be proportional to the scanning range of the tunable laser. However, the commercial external cavity diode laser (ECDL) is not an ideal tunable laser source in practical applications. Due to the unavoidable mode hopping and scanning nonlinearity of the ECDL, the measurement precision of FMCW laser distance measurements can be substantially affected. Therefore, an FMCW laser ranging system with two auxiliary interferometers is proposed in this paper. Moreover, to eliminate the effects of ECDL, the frequency-sampling method and mode hopping influence suppression method are employed. Compared with a fringe counting interferometer, this FMCW laser ranging system has a measuring error of ± 20 μm at the distance of 5.8 m.

K-line spectra from tungsten heated by an intense pulsed electron beam.

PubMed

Pereira, N R; Weber, B V; Apruzese, J P; Mosher, D; Schumer, J W; Seely, J F; Szabo, C I; Boyer, C N; Stephanakis, S J; Hudson, L T

2010-10-01

The plasma-filled rod-pinch diode (PFRP) is an intense source of x-rays ideal for radiography of dense objects. In the PRFP megavoltage electrons from a pulsed discharge concentrate at the pointed end of a 1 mm diameter tapered tungsten rod. Ionization of this plasma might increase the energy of tungsten's Kα(1) fluorescence line, at 59.3182 keV, enough for the difference to be observed by a high-resolution Cauchois transmission crystal spectrograph. When the PFRP's intense hard bremsstrahlung is suppressed by the proper shielding, such an instrument gives excellent fluorescence spectra, albeit with as yet insufficient resolution to see any effect of tungsten's ionization. Higher resolution is possible with various straightforward upgrades that are feasible thanks to the radiation's high intensity.

Thermoresponsive scattering coating for smart white LEDs.

PubMed

Bauer, Jurica; Verbunt, Paul P C; Lin, Wan-Yu; Han, Yang; Van, My-Phung; Cornelissen, Hugo J; Yu, Joan J H; Bastiaansen, Cees W M; Broer, Dirk J

2014-12-15

White light emitting diode (LED) systems, capable of lowering the color temperature of emitted light on dimming, have been reported in the literature. These systems all use multiple color LEDs and complex control circuitry. Here we present a novel responsive lighting system based on a single white light emitting LED and a thermoresponsive scattering coating. The coated LED automatically emits light of lower correlated color temperature (CCT) when the power is reduced. We also present results on the use of multiple phosphors in the white light LED allowing for the emission of warm white light in the range between 2900 K and 4150 K, and with a chromaticity complying with the ANSI standards (C78.377). This responsive warm white light LED-system with close-to-ideal emission characteristics is highly interesting for the lighting industry.

Compact and portable multiline UV and visible Raman lasers in hydrogen-filled HC-PCF.

PubMed

Wang, Y Y; Couny, F; Light, P S; Mangan, B J; Benabid, F

2010-04-15

We report on the realization of compact UV visible multiline Raman lasers based on two types of hydrogen-filled hollow-core photonic crystal fiber. The first, with a large pitch Kagome lattice structure, offers a broad spectral coverage from near IR through to the much sought after yellow, deep-blue and UV, whereas the other, based on photonic bandgap guidance, presents a pump conversion concentrated in the visible region. The high Raman efficiency achieved through these fibers allows for compact, portable diode-pumped solid-state lasers to be used as pumps. Each discrete component of this laser system exhibits a spectral density several orders of magnitude larger than what is achieved with supercontinuum sources and a narrow linewidth, making it an ideal candidate for forensics and biomedical applications.

Full-color OLED on silicon microdisplay

NASA Astrophysics Data System (ADS)

Ghosh, Amalkumar P.

2002-02-01

eMagin has developed numerous enhancements to organic light emitting diode (OLED) technology, including a unique, up- emitting structure for OLED-on-silicon microdisplay devices. Recently, eMagin has fabricated full color SVGA+ resolution OLED microdisplays on silicon, with over 1.5 million color elements. The display is based on white light emission from OLED followed by LCD-type red, green and blue color filters. The color filters are patterned directly on OLED devices following suitable thin film encapsulation and the drive circuits are built directly on single crystal silicon. The resultant color OLED technology, with hits high efficiency, high brightness, and low power consumption, is ideally suited for near to the eye applications such as wearable PCS, wireless Internet applications and mobile phone, portable DVD viewers, digital cameras and other emerging applications.

The design and characterization of a digital optical breast cancer imaging system.

PubMed

Flexman, Molly L; Li, Yang; Bur, Andres M; Fong, Christopher J; Masciotti, James M; Al Abdi, Rabah; Barbour, Randall L; Hielscher, Andreas H

2008-01-01

Optical imaging has the potential to play a major role in breast cancer screening and diagnosis due to its ability to image cancer characteristics such as angiogenesis and hypoxia. A promising approach to evaluate and quantify these characteristics is to perform dynamic imaging studies in which one monitors the hemodynamic response to an external stimulus, such as a valsalva maneuver. It has been shown that the response to such stimuli shows MARKED differences between cancerous and healthy tissues. The fast imaging rates and large dynamic range of digital devices makes them ideal for this type of imaging studies. Here we present a digital optical tomography system designed specifically for dynamic breast imaging. The instrument uses laser diodes at 4 different near-infrared wavelengths with 32 sources and 128 silicon photodiode detectors.

Avalanche photo diodes in the observatory environment: lucky imaging at 1-2.5 microns

NASA Astrophysics Data System (ADS)

Vaccarella, A.; Sharp, R.; Ellis, M.; Singh, S.; Bloxham, G.; Bouchez, A.; Conan, R.; Boz, R.; Bundy, D.; Davies, J.; Espeland, B.; Hart, J.; Herrald, N.; Ireland, M.; Jacoby, G.; Nielsen, J.; Vest, C.; Young, P.; Fordham, B.; Zovaro, A.

2016-08-01

The recent availability of large format near-infrared detectors with sub-election readout noise is revolutionizing our approach to wavefront sensing for adaptive optics. However, as with all near-infrared detector technologies, challenges exist in moving from the comfort of the laboratory test-bench into the harsh reality of the observatory environment. As part of the broader adaptive optics program for the GMT, we are developing a near-infrared Lucky Imaging camera for operational deployment at the ANU 2.3 m telescope at Siding Spring Observatory. The system provides an ideal test-bed for the rapidly evolving Selex/SAPHIRA eAPD technology while providing scientific imaging at angular resolution rivalling the Hubble Space Telescope at wavelengths λ = 1.3-2.5 μm.

Efficiency of tandem solar cell systems as function of temperature and solar energy concentration ratio

NASA Technical Reports Server (NTRS)

Gokcen, N. A.; Loferski, J. J.

1979-01-01

The results of a comprehensive theoretical analysis of tandem photovoltaic solar cells as a function of temperature and solar concentration ratio are presented. The overall efficiencies of tandem cell stacks consisting of as many as 24 cells having gaps in the 0.7 to 3.6 eV range were calculated for temperatures of 200, 300, 400, and 500 K and for illumination by an AMO solar spectrum having concentration ratios of 1, 100, 500, and 1000 suns. For ideal diodes (A = B = 1), the calculations show that the optimized overall efficiency has a limiting value eta sub opt of approximately 70 percent for T = 200 K and C = 1000; for T = 300 K and C = 1000, this limiting efficiency approaches 60 percent.

Unidirectional invisibility induced by parity-time symmetric circuit

NASA Astrophysics Data System (ADS)

Lv, Bo; Fu, Jiahui; Wu, Bian; Li, Rujiang; Zeng, Qingsheng; Yin, Xinhua; Wu, Qun; Gao, Lei; Chen, Wan; Wang, Zhefei; Liang, Zhiming; Li, Ao; Ma, Ruyu

2017-01-01

Parity-time (PT) symmetric structures present the unidirectional invisibility at the spontaneous PT-symmetry breaking point. In this paper, we propose a PT-symmetric circuit consisting of a resistor and a microwave tunnel diode (TD) which represent the attenuation and amplification, respectively. Based on the scattering matrix method, the circuit can exhibit an ideal unidirectional performance at the spontaneous PT-symmetry breaking point by tuning the transmission lines between the lumped elements. Additionally, the resistance of the reactance component can alter the bandwidth of the unidirectional invisibility flexibly. Furthermore, the electromagnetic simulation for the proposed circuit validates the unidirectional invisibility and the synchronization with the input energy well. Our work not only provides an unidirectional invisible circuit based on PT-symmetry, but also proposes a potential solution for the extremely selective filter or cloaking applications.

On the measurement of thin-ideal internalization: Implications for interpretation of risk factors and treatment outcome in eating disorders research.

PubMed

Thompson, J Kevin; Schaefer, Lauren M; Dedrick, Robert F

2018-04-01

Although the Sociocultural Attitudes Towards Appearance Questionnaire (SATAQ) and Ideal Body Stereotype Scale (IBSS) are used interchangeably to assess thin ideal internalization, limited work has examined the assumption that the two measures index the same construct. The current study utilized confirmatory factor analysis to examine whether these measures capture a single construct (one-factor), two constructs (two-factor), or both shared and unique constructs (bifactor). The SATAQ-4R-Internalization: Thin/Low Body Fat subscale and IBSS-Revised were administered to 1,114 college females. A bifactor model provided the best fit to the data. Further, the SATAQ-4R was more strongly related to disordered eating and body satisfaction than the IBSS-R. Results indicate that the two most commonly used measures of internalization capture both shared and unique constructs. While both measures appear to contribute to the assessment of a global internalization factor, the SATAQ-4R may be better suited to assess personal acceptance of and desire to achieve a thin body, while the IBSS-R may be better suited to assess an awareness or acknowledgement of broader sociocultural ideals (e.g., toned, shapely bodies). Continued psychometric investigation of the scales is recommended in order to ensure targeted assessment of the intended constructs. © 2018 Wiley Periodicals, Inc.

Predictive factors of disordered eating and body image satisfaction in cyprus.

PubMed

Argyrides, Marios; Kkeli, Natalie

2015-05-01

This study aimed to assess possible relationships and predictor variables between disordered eating attitudes and behaviors, the internalization of the thin ideal construct, body image satisfaction, body image investment, weight-related anxiety, and body mass index (BMI) among Greek-Cypriot female university students in Cyprus. A total of 243 female university students responded to self-report measures assessing disordered eating, internalization of the thin ideal, body satisfaction, body image investment, and weight-related anxiety. Disordered eating was positively correlated to the internalization of the thin ideal, body image investment, weight-related anxiety, and BMI and negatively correlated with body image satisfaction. The internalization of the thin ideal was also positively correlated to weight-related anxiety and body image investment and negatively correlated to body image satisfaction. Furthermore, weight-related anxiety and internalization of the thin ideal have been found to be significant predictors of disordered eating attitudes. Possible explanations and vulnerability factors are addressed, as well as implication for prevention strategies and future research. © 2014 Wiley Periodicals, Inc.

Body satisfaction and pressure to be thin in younger and older Muslim and non-Muslim women: the role of Western and non-Western dress preferences.

PubMed

Dunkel, Trisha M; Davidson, Denise; Qurashi, Shaji

2010-01-01

Younger and older Muslim and non-Muslim women living in the United States completed questionnaires about body satisfaction and their internalization of Western standards of beauty (thin-ideal). Younger Muslim women wearing non-Western clothing and a head veil were significantly less likely to express drive for thinness or pressure to attain a thin-ideal standard of beauty than women wearing Western dress or younger women wearing non-Western dress without a head veil. Older women, while expressing greater discrepancy between their ideal body shape and their current body shape, and less satisfaction with their bodies than younger women, reported less drive for thinness and less pressure to attain the Western thin-ideal standard of beauty than younger women. These results are discussed in terms of how factors such as age and religion may serve as protective factors against a strong or unhealthy drive for thinness or thin-ideal standard. Copyright 2009 Elsevier Ltd. All rights reserved.

Application of argon atmospheric cold plasma for indium tin oxide (ITO) based diodes

NASA Astrophysics Data System (ADS)

Akbari Nia, S.; Jalili, Y. Seyed; Salar Elahi, A.

2017-09-01

Transparent Conductive Oxide (TCO) layers due to transparency, high conductivity and hole injection capability have attracted a lot of attention. One of these layers is Indium Tin Oxide (ITO). ITO due to low resistance, transparency in the visible spectrum and its proper work function is widely used in the manufacture of organic light emitting diodes and solar cells. One way for improving the ITO surface is plasma treatment. In this paper, changes in surface morphology, by applying argon atmospheric pressure cold plasma, was studied through Atomic Force Microscopic (AFM) image analysis and Fourier Transform Infrared Spectroscopy (FTIR) analysis. FTIR analysis showed functional groups were not added or removed, but chemical bond angle and bonds strength on the surface were changed and also AFM images showed that surface roughness was increased. These factors lead to the production of diodes with enhanced Ohmic contact and injection mechanism which are more appropriate in industrial applications.

High-efficiency, 154  W CW, diode-pumped Raman fiber laser with brightness enhancement.

PubMed

Glick, Yaakov; Fromzel, Viktor; Zhang, Jun; Ter-Gabrielyan, Nikolay; Dubinskii, Mark

2017-01-20

We demonstrate a high-power, high-efficiency Raman fiber laser pumped directly by laser diode modules at 978 nm. 154 W of CW power were obtained at a wavelength of 1023 nm with an optical to optical efficiency of 65%. A commercial graded-index (GRIN) core fiber acts as the Raman fiber in a power oscillator configuration, which includes spectral selection to prevent generation of the second Stokes. In addition, brightness enhancement of the pump beam by a factor of 8.4 is attained due to the Raman gain distribution profile in the GRIN fiber. To the best of our knowledge this is the highest power and highest efficiency Raman fiber laser demonstrated in any configuration allowing brightness enhancement (i.e., in either cladding-pumped configuration or with GRIN fibers, excluding step-index core pumped), regardless of pumping scheme (i.e., either diode pumped or fiber laser pumped).

Development of all-solid-state flash x-ray generator with photoconductive semiconductor switches.

PubMed

Xun, Ma; Jianjun, Deng; Hongwei, Liu; Jianqiang, Yuan; Jinfeng, Liu; Bing, Wei; Yanling, Qing; Wenhui, Han; Lingyun, Wang; Pin, Jiang; Hongtao, Li

2014-09-01

A compact, low-jitter, and high repetitive rate all-solid-state flash x-ray generator making use of photo conductive semiconductor switches was developed recently for the diagnostic purpose of some hydrokinetical experiments. The generator consisted of twelve stages of Blumlein pulse forming networks, and an industrial cold cathode diode was used to generate intense x-ray radiations with photon energy up to 220 keV. Test experiments showed that the generator could produce >1 kA electron beam currents and x-ray pulses with ~40 ns duration under 100 Hz repetitive rates at least (limited by the triggering laser on hand), also found was that the delay time of the cathode explosive emission is crucial to the energy transfer efficiency of the whole system. In addition, factors affecting the diode impedance, how the switching synchronization and diode impedance determining the allowable operation voltage were discussed.

Construction and Characterization of External Cavity Diode Lasers for Atomic Physics

PubMed Central

Hardman, Kyle S.; Bennetts, Shayne; Debs, John E.; Kuhn, Carlos C. N.; McDonald, Gordon D.; Robins, Nick

2014-01-01

Since their development in the late 1980s, cheap, reliable external cavity diode lasers (ECDLs) have replaced complex and expensive traditional dye and Titanium Sapphire lasers as the workhorse laser of atomic physics labs1,2. Their versatility and prolific use throughout atomic physics in applications such as absorption spectroscopy and laser cooling1,2 makes it imperative for incoming students to gain a firm practical understanding of these lasers. This publication builds upon the seminal work by Wieman3, updating components, and providing a video tutorial. The setup, frequency locking and performance characterization of an ECDL will be described. Discussion of component selection and proper mounting of both diodes and gratings, the factors affecting mode selection within the cavity, proper alignment for optimal external feedback, optics setup for coarse and fine frequency sensitive measurements, a brief overview of laser locking techniques, and laser linewidth measurements are included. PMID:24796259

Bio-Inspired Asynchronous Pixel Event Tricolor Vision Sensor.

PubMed

Lenero-Bardallo, Juan Antonio; Bryn, D H; Hafliger, Philipp

2014-06-01

This article investigates the potential of the first ever prototype of a vision sensor that combines tricolor stacked photo diodes with the bio-inspired asynchronous pixel event communication protocol known as Address Event Representation (AER). The stacked photo diodes are implemented in a 22 × 22 pixel array in a standard STM 90 nm CMOS process. Dynamic range is larger than 60 dB and pixels fill factor is 28%. The pixels employ either simple pulse frequency modulation (PFM) or a Time-to-First-Spike (TFS) mode. A heuristic linear combination of the chip's inherent pseudo colors serves to approximate RGB color representation. Furthermore, the sensor outputs can be processed to represent the radiation in the near infrared (NIR) band without employing external filters, and to color-encode direction of motion due to an asymmetry in the update rates of the different diode layers.

Optical analysis of AlGaInP laser diodes with real refractive index guided self-aligned structure

NASA Astrophysics Data System (ADS)

Xu, Yun; Zhu, Xiaopeng; Ye, Xiaojun; Kang, Xiangning; Cao, Qing; Guo, Liang; Chen, Lianghui

2004-05-01

Optical modes of AlGaInP laser diodes with real refractive index guided self-aligned (RISA) structure were analyzed theoretically on the basis of two-dimension semivectorial finite-difference methods (SV-FDMs) and the computed simulation results were presented. The eigenvalue and eigenfunction of this two-dimension waveguide were obtained and the dependence of the confinement factor and beam divergence angles in the direction of parallel and perpendicular to the pn junction on the structure parameters such as the number of quantum wells, the Al composition of the cladding layers, the ridge width, the waveguide thickness and the residual thickness of the upper P-cladding layer were investigated. The results can provide optimized structure parameters and help us design and fabricate high performance AlGaInP laser diodes with a low beam aspect ratio required for optical storage applications.

Effet de l'énergie du faisceau d'ions servant à l'assistance du dépôt de matériaux organiques utilisés pour réaliser des diodes électroluminescentes

NASA Astrophysics Data System (ADS)

Antony, R.; Moliton, A.; Ratier, B.

1998-06-01

Light emitting diode based on the structure ITO/Alq3/Ca-Al lead to enhanced quantum efficiency when the Alq3 active layer is obtained by IBAD (Ion Beam Assisted Deposition): with Iodine ions, the optimization (quantum efficiency multiplied by a factor10) is obtained for an ion energy equal to 100eV. La réalisation de diodes électroluminescentes basées sur la structure ITO/Alq3/Ca-Al conduit à des performances améliorées lorsque le dépôt de la couche active Alq3 est effectué avec l'assistance d'un faisceau d'ions; l'optimisation (rendement quantique interne accru d'un ordre de grandeur) correspond à des ions Iode d'énergie 100eV.

Construction and characterization of external cavity diode lasers for atomic physics.

PubMed

Hardman, Kyle S; Bennetts, Shayne; Debs, John E; Kuhn, Carlos C N; McDonald, Gordon D; Robins, Nick

2014-04-24

Since their development in the late 1980s, cheap, reliable external cavity diode lasers (ECDLs) have replaced complex and expensive traditional dye and Titanium Sapphire lasers as the workhorse laser of atomic physics labs. Their versatility and prolific use throughout atomic physics in applications such as absorption spectroscopy and laser cooling makes it imperative for incoming students to gain a firm practical understanding of these lasers. This publication builds upon the seminal work by Wieman, updating components, and providing a video tutorial. The setup, frequency locking and performance characterization of an ECDL will be described. Discussion of component selection and proper mounting of both diodes and gratings, the factors affecting mode selection within the cavity, proper alignment for optimal external feedback, optics setup for coarse and fine frequency sensitive measurements, a brief overview of laser locking techniques, and laser linewidth measurements are included.

Effect of arylamine hole-transport units on the performance of blue polyspirobifulorene light-emitting diodes

NASA Astrophysics Data System (ADS)

Abbaszadeh, Davood; Nicolai, Herman T.; Crǎciun, N. Irina; Blom, Paul W. M.

2014-11-01

The operation of blue light-emitting diodes based on polyspirobifluorene with a varying number of N ,N ,N',N' tetraaryldiamino biphenyl (TAD) hole-transport units (HTUs) is investigated. Assuming that the electron transport is not affected by the incorporation of TAD units, model calculations predict that a concentration of 5% HTU leads to an optimal efficiency for this blue-emitting polymer. However, experimentally an optimum performance is achieved for 10% TAD HTUs. Analysis of the transport and recombination shows that polymer light-emitting diodes with 5%, 7.5%, and 12.5% TAD units follow the predicted behavior. The enhanced performance of the polymer with 10% TAD originates from a decrease in the number of electron traps, which is typically a factor of three lower than the universal value found in many polymers. This reduced number of traps leads to a reduction of nonradiative recombination and exciton quenching at the cathode.

Ideal cardiovascular health status and its association with socioeconomic factors in Chinese adults in Shandong, China.

PubMed

Ren, J; Guo, X L; Lu, Z L; Zhang, J Y; Tang, J L; Chen, X; Gao, C C; Xu, C X; Xu, A Q

2016-09-07

Cardiovascular disease (CVD) is the leading cause of morbidity and mortality in the world. In 2010, a goal released by the American Heart Association (AHA) Committee focused on the primary reduction in cardiovascular risk. Data collected from 7683 men and 7667 women aged 18-69 years were analyzed. The distribution of ideal cardiovascular health metrics based on 7 cardiovascular disease risk factors or health behaviors in according to the definition of AHA was evaluated among the subjects. The association of the socioeconomic factors on the prevalence of meeting 5 or more ideal cardiovascular health metrics was estimated by logistic regression analysis, and a chi-square test for categorical variables and the general linear model (GLM) procedure for continuous variables were used to compare differences in prevalence and in means among genders. Seven of 15350 participants (0.05 %) met all 7 cardiovascular health metrics. The women had a higher proportion of meeting 5 or more ideal health metrics compared with men (32.67 VS.14.27 %). The subjects with a higher education and income level had a higher proportion of meeting 5 or more ideal health metrics than the subjects with a lower education and income level. A comparison between subjects with meeting 5 or more ideal cardiovascular health metrics with subjects meeting 4 or fewer ideal cardiovascular health metrics reveals that adjusted odds ratio [OR, 95 % confidence intervals (95 % CI)] was 1.42 (0.95, 2.21) in men and 2.59 (1.74, 3.87) in women for higher education and income, respectively. The prevalence of meeting all 7 cardiovascular health metrics was low in the adult population. Women, young subjects, and those with higher levels of education or income tend to have a greater number of the ideal cardiovascular health metrics. Higher socioeconomic status was associated with an increasing prevalence of meeting 5 or more cardiovascular health metrics in women but not in men. It's urgent to develop comprehensive population-based interventions to improve the cardiovascular risk factors in Shandong Province in China.

Detector-specific correction factors in radiosurgery beams and their impact on dose distribution calculations.

PubMed

García-Garduño, Olivia A; Rodríguez-Ávila, Manuel A; Lárraga-Gutiérrez, José M

2018-01-01

Silicon-diode-based detectors are commonly used for the dosimetry of small radiotherapy beams due to their relatively small volumes and high sensitivity to ionizing radiation. Nevertheless, silicon-diode-based detectors tend to over-respond in small fields because of their high density relative to water. For that reason, detector-specific beam correction factors ([Formula: see text]) have been recommended not only to correct the total scatter factors but also to correct the tissue maximum and off-axis ratios. However, the application of [Formula: see text] to in-depth and off-axis locations has not been studied. The goal of this work is to address the impact of the correction factors on the calculated dose distribution in static non-conventional photon beams (specifically, in stereotactic radiosurgery with circular collimators). To achieve this goal, the total scatter factors, tissue maximum, and off-axis ratios were measured with a stereotactic field diode for 4.0-, 10.0-, and 20.0-mm circular collimators. The irradiation was performed with a Novalis® linear accelerator using a 6-MV photon beam. The detector-specific correction factors were calculated and applied to the experimental dosimetry data for in-depth and off-axis locations. The corrected and uncorrected dosimetry data were used to commission a treatment planning system for radiosurgery planning. Various plans were calculated with simulated lesions using the uncorrected and corrected dosimetry. The resulting dose calculations were compared using the gamma index test with several criteria. The results of this work presented important conclusions for the use of detector-specific beam correction factors ([Formula: see text] in a treatment planning system. The use of [Formula: see text] for total scatter factors has an important impact on monitor unit calculation. On the contrary, the use of [Formula: see text] for tissue-maximum and off-axis ratios has not an important impact on the dose distribution calculation by the treatment planning system. This conclusion is only valid for the combination of treatment planning system, detector, and correction factors used in this work; however, this technique can be applied to other treatment planning systems, detectors, and correction factors.

A Comment on the Dependence of LED's Efficiency on the Junction Ideality Factor

ERIC Educational Resources Information Center

Sethi, Anubhav; Gupta, Yashika; Arun, P.

2018-01-01

P-n junctions form the basic building blocks for any semiconductor device. Therefore, the complete understanding of the junction characteristics is very important. Although being a widely discussed topic in electronics, there are still some gaps such as finding the value and significance of the junction ideality factor, that needs to be addressed.…

Commentary on factors affecting transverse vibration using an idealized theoretical equation

Treesearch

Joseph F. Murphy

2000-01-01

An idealized theoretical equation to calculate flexural stiffness using transverse vibration of a simply end-supported beam is being considered by the American Society of Testing and Materials (ASTM) Wood Committee D07 to determine lumber modulus of elasticity. This commentary provides the user a quantitative view of six factors that affect the accuracy of using the...

Monte Carlo simulated corrections for beam commissioning measurements with circular and MLC shaped fields on the CyberKnife M6 System: a study including diode, microchamber, point scintillator, and synthetic microdiamond detectors.

PubMed

Francescon, P; Kilby, W; Noll, J M; Masi, L; Satariano, N; Russo, S

2017-02-07

Monte Carlo simulation was used to calculate correction factors for output factor (OF), percentage depth-dose (PDD), and off-axis ratio (OAR) measurements with the CyberKnife M6 System. These include the first such data for the InCise MLC. Simulated detectors include diodes, air-filled microchambers, a synthetic microdiamond detector, and point scintillator. Individual perturbation factors were also evaluated. OF corrections show similar trends to previous studies. With a 5 mm fixed collimator the diode correction to convert a measured OF to the corresponding point dose ratio varies between  -6.1% and  -3.5% for the diode models evaluated, while in a 7.6 mm  ×  7.7 mm MLC field these are  -4.5% to  -1.8%. The corresponding microchamber corrections are  +9.9% to  +10.7% and  +3.5% to  +4.0%. The microdiamond corrections have a maximum of  -1.4% for the 7.5 mm and 10 mm collimators. The scintillator corrections are  <1% in all beams. Measured OF showed uncorrected inter-detector differences  >15%, reducing to  <3% after correction. PDD corrections at d  >  d max were  <2% for all detectors except IBA Razor where a maximum 4% correction was observed at 300 mm depth. OAR corrections were smaller inside the field than outside. At the beam edge microchamber OAR corrections were up to 15%, mainly caused by density perturbations, which blurs the measured penumbra. With larger beams and depths, PTW and IBA diode corrections outside the beam were up to 20% while the Edge detector needed smaller corrections although these did vary with orientation. These effects are most noticeable for large field size and depth, where they are dominated by fluence and stopping power perturbations. The microdiamond OAR corrections were  <3% outside the beam. This paper provides OF corrections that can be used for commissioning new CyberKnife M6 Systems and retrospectively checking estimated corrections used previously. We recommend the PDD and OAR corrections are used to guide detector selection and inform the evaluation of results rather than to explicitly correct measurements.

Monte Carlo simulated corrections for beam commissioning measurements with circular and MLC shaped fields on the CyberKnife M6 System: a study including diode, microchamber, point scintillator, and synthetic microdiamond detectors

NASA Astrophysics Data System (ADS)

Francescon, P.; Kilby, W.; Noll, J. M.; Masi, L.; Satariano, N.; Russo, S.

2017-02-01

Monte Carlo simulation was used to calculate correction factors for output factor (OF), percentage depth-dose (PDD), and off-axis ratio (OAR) measurements with the CyberKnife M6 System. These include the first such data for the InCise MLC. Simulated detectors include diodes, air-filled microchambers, a synthetic microdiamond detector, and point scintillator. Individual perturbation factors were also evaluated. OF corrections show similar trends to previous studies. With a 5 mm fixed collimator the diode correction to convert a measured OF to the corresponding point dose ratio varies between  -6.1% and  -3.5% for the diode models evaluated, while in a 7.6 mm  ×  7.7 mm MLC field these are  -4.5% to  -1.8%. The corresponding microchamber corrections are  +9.9% to  +10.7% and  +3.5% to  +4.0%. The microdiamond corrections have a maximum of  -1.4% for the 7.5 mm and 10 mm collimators. The scintillator corrections are  <1% in all beams. Measured OF showed uncorrected inter-detector differences  >15%, reducing to  <3% after correction. PDD corrections at d  >  d max were  <2% for all detectors except IBA Razor where a maximum 4% correction was observed at 300 mm depth. OAR corrections were smaller inside the field than outside. At the beam edge microchamber OAR corrections were up to 15%, mainly caused by density perturbations, which blurs the measured penumbra. With larger beams and depths, PTW and IBA diode corrections outside the beam were up to 20% while the Edge detector needed smaller corrections although these did vary with orientation. These effects are most noticeable for large field size and depth, where they are dominated by fluence and stopping power perturbations. The microdiamond OAR corrections were  <3% outside the beam. This paper provides OF corrections that can be used for commissioning new CyberKnife M6 Systems and retrospectively checking estimated corrections used previously. We recommend the PDD and OAR corrections are used to guide detector selection and inform the evaluation of results rather than to explicitly correct measurements.