Superluminescent light emitting diodes: the best out of two worlds

NASA Astrophysics Data System (ADS)

Rossetti, M.; Napierala, J.; Matuschek, N.; Achatz, U.; Duelk, M.; Vélez, C.; Castiglia, A.; Grandjean, N.; Dorsaz, J.; Feltin, E.

2012-03-01

Since pico-projectors were starting to become the next electronic "must-have" gadget, the experts were discussing which light-source technology seems to be the best for the existing three major projection approaches for the optical scanning module such as digital light processing, liquid crystal on silica and laser beam steering. Both so-far used light source technologies have distinct advantages and disadvantages. Though laser-based pico-projectors are focus-free and deliver a wider color gamut, their major disadvantages are speckle noise, cost and safety issues. In contrast, projectors based on cheaper Light Emitting Diodes (LEDs) as light source are criticized for a lack of brightness and for having limited focus. Superluminescent Light Emitting Diodes (SLEDs) are temporally incoherent and spatially coherent light sources merging in one technology the advantages of both Laser Diodes (LDs) and LEDs. With almost no visible speckle noise, focus-free operation and potentially the same color gamut than LDs, SLEDs could potentially answer the question which light source to use in future projector applications. In this quest for the best light source, we realized visible SLEDs emitting both in the red and blue spectral region. While the technology required for the realization of red emitters is already well established, III-nitride compounds required for blue emission have experienced a major development only in relatively recent times and the technology is still under development. The present paper is a review of the status of development reached for the blue superluminescent diodes based on the GaN material system.

LED roadway lighting, volume 2 : field evaluations and software comparisons.

DOT National Transportation Integrated Search

2012-10-01

The use of light-emitting diodes (LEDs) for roadway lighting can potentially save energy costs and reduce the frequency of maintenance. The objective of this study is to explore the current state of the art in LED roadway lighting technology. Three s...

High efficiency III-nitride light-emitting diodes

DOEpatents

Crawford, Mary; Koleske, Daniel; Cho, Jaehee; Zhu, Di; Noemaun, Ahmed; Schubert, Martin F; Schubert, E. Fred

2013-05-28

Tailored doping of barrier layers enables balancing of the radiative recombination among the multiple-quantum-wells in III-Nitride light-emitting diodes. This tailored doping enables more symmetric carrier transport and uniform carrier distribution which help to reduce electron leakage and thus reduce the efficiency droop in high-power III-Nitride LEDs. Mitigation of the efficiency droop in III-Nitride LEDs may enable the pervasive market penetration of solid-state-lighting technologies in high-power lighting and illumination.

An aluminium nitride light-emitting diode with a wavelength of 210 nanometres.

PubMed

Taniyasu, Yoshitaka; Kasu, Makoto; Makimoto, Toshiki

2006-05-18

Compact high-efficiency ultraviolet solid-state light sources--such as light-emitting diodes (LEDs) and laser diodes--are of considerable technological interest as alternatives to large, toxic, low-efficiency gas lasers and mercury lamps. Microelectronic fabrication technologies and the environmental sciences both require light sources with shorter emission wavelengths: the former for improved resolution in photolithography and the latter for sensors that can detect minute hazardous particles. In addition, ultraviolet solid-state light sources are also attracting attention for potential applications in high-density optical data storage, biomedical research, water and air purification, and sterilization. Wide-bandgap materials, such as diamond and III-V nitride semiconductors (GaN, AlGaN and AlN; refs 3-10), are potential materials for ultraviolet LEDs and laser diodes, but suffer from difficulties in controlling electrical conduction. Here we report the successful control of both n-type and p-type doping in aluminium nitride (AlN), which has a very wide direct bandgap of 6 eV. This doping strategy allows us to develop an AlN PIN (p-type/intrinsic/n-type) homojunction LED with an emission wavelength of 210 nm, which is the shortest reported to date for any kind of LED. The emission is attributed to an exciton transition, and represents an important step towards achieving exciton-related light-emitting devices as well as replacing gas light sources with solid-state light sources.

Evaluation of an LED (Light-Emitting Diode) high-mounted signal lamp

NASA Astrophysics Data System (ADS)

Olson, P. L.

1987-02-01

Two studies are described evaluating high-mounted stoplights using light-emitting diodes (LEDs) compared with conventional incandescent units. The first of these studies obtained ratings from subjects who drove one car and followed another car that was equipped with the test lamps. The results indicate that the subjects generally preferred the LEDs to the conventional lamp. The second study was a laboratory evaluation of the attention-getting capabilities of LED and incandescent stoplights. Under all conditions tested subjects responded faster to the LED units. The response time advantage for the LED units increased with more difficult viewing conditions, such as high levels of illumination and long viewing distance. The results of these investigations are discussed in terms of the applicability of the LED technology to high mounted stoplights on motor vehicles.

Photovoltaic powered ultraviolet and visible light-emitting diodes for sustainable point-of-use disinfection of drinking waters.

PubMed

Lui, Gough Yumu; Roser, David; Corkish, Richard; Ashbolt, Nicholas; Jagals, Paul; Stuetz, Richard

2014-09-15

For many decades, populations in rural and remote developing regions will be unable to access centralised piped potable water supplies, and indeed, decentralised options may be more sustainable. Accordingly, improved household point-of-use (POU) disinfection technologies are urgently needed. Compared to alternatives, ultraviolet (UV) light disinfection is very attractive because of its efficacy against all pathogen groups and minimal operational consumables. Though mercury arc lamp technology is very efficient, it requires frequent lamp replacement, involves a toxic heavy metal, and their quartz envelopes and sleeves are expensive, fragile and require regular cleaning. An emerging alternative is semiconductor-based units where UV light emitting diodes (UV-LEDs) are powered by photovoltaics (PV). Our review charts the development of these two technologies, their current status, and challenges to their integration and POU application. It explores the themes of UV-C-LEDs, non-UV-C LED technology (e.g. UV-A, visible light, Advanced Oxidation), PV power supplies, PV/LED integration and POU suitability. While UV-C LED technology should mature in the next 10 years, research is also needed to address other unresolved barriers to in situ application as well as emerging research opportunities especially UV-A, photocatalyst/photosensitiser use and pulsed emission options. Copyright © 2014 Elsevier B.V. All rights reserved.

LEDing the Way.

ERIC Educational Resources Information Center

Dahlgren, Sally

2000-01-01

Discusses how advances in light-emitting diode (LED) technology is helping video displays at sporting events get fans closer to the action than ever before. The types of LED displays available are discussed as are their operation and maintenance issues. (GR)

Spectral matching technology for light-emitting diode-based jaundice photodynamic therapy device

NASA Astrophysics Data System (ADS)

Gan, Ru-ting; Guo, Zhen-ning; Lin, Jie-ben

2015-02-01

The objective of this paper is to obtain the spectrum of light-emitting diode (LED)-based jaundice photodynamic therapy device (JPTD), the bilirubin absorption spectrum in vivo was regarded as target spectrum. According to the spectral constructing theory, a simple genetic algorithm as the spectral matching algorithm was first proposed in this study. The optimal combination ratios of LEDs were obtained, and the required LEDs number was then calculated. Meanwhile, the algorithm was compared with the existing spectral matching algorithms. The results show that this algorithm runs faster with higher efficiency, the switching time consumed is 2.06 s, and the fitting spectrum is very similar to the target spectrum with 98.15% matching degree. Thus, blue LED-based JPTD can replace traditional blue fluorescent tube, the spectral matching technology that has been put forward can be applied to the light source spectral matching for jaundice photodynamic therapy and other medical phototherapy.

Light Emitting Diode (LED)

NASA Technical Reports Server (NTRS)

1997-01-01

A special lighting technology was developed for space-based commercial plant growth research on NASA's Space Shuttle. Surgeons have used this technology to treat brain cancer on Earth, in two successful operations. The treatment technique called photodynamic therapy, requires the surgeon to use tiny pinhead-size Light Emitting Diodes (LEDs) (a source releasing long wavelengths of light) to activate light-sensitive, tumor-treating drugs. Laser light has been used for this type of surgery in the past, but the LED light illuminates through all nearby tissues, reaching parts of a tumor that shorter wavelengths of laser light carnot. The new probe is safer because the longer wavelengths of light are cooler than the shorter wavelengths of laser light, making the LED less likely to injure normal brain tissue near the tumor. It can also be used for hours at a time while still remaining cool to the touch. The LED probe consists of 144 tiny pinhead-size diodes, is 9-inches long, and about one-half-inch in diameter. The small balloon aids in even distribution of the light source. The LED light source is compact, about the size of a briefcase, and can be purchased for a fraction of the cost of a laser. The probe was developed for photodynamic cancer therapy by the Marshall Space Flight Center under a NASA Small Business Innovative Research program grant.

Flexible Light Emission Diode Arrays Made of Transferred Si Microwires-ZnO Nanofilm with Piezo-Phototronic Effect Enhanced Lighting.

PubMed

Li, Xiaoyi; Liang, Renrong; Tao, Juan; Peng, Zhengchun; Xu, Qiming; Han, Xun; Wang, Xiandi; Wang, Chunfeng; Zhu, Jing; Pan, Caofeng; Wang, Zhong Lin

2017-04-25

Due to the fragility and the poor optoelectronic performances of Si, it is challenging and exciting to fabricate the Si-based flexible light-emitting diode (LED) array devices. Here, a flexible LED array device made of Si microwires-ZnO nanofilm, with the advantages of flexibility, stability, lightweight, and energy savings, is fabricated and can be used as a strain sensor to demonstrate the two-dimensional pressure distribution. Based on piezo-phototronic effect, the intensity of the flexible LED array can be increased more than 3 times (under 60 MPa compressive strains). Additionally, the device is stable and energy saving. The flexible device can still work well after 1000 bending cycles or 6 months placed in the atmosphere, and the power supplied to the flexible LED array is only 8% of the power of the surface-contact LED. The promising Si-based flexible device has wide range application and may revolutionize the technologies of flexible screens, touchpad technology, and smart skin.

Cost and energy-efficient (LED, induction and plasma) roadway lighting.

DOT National Transportation Integrated Search

2013-11-01

There is an increasing interest in using new lighting technologies such as light emitting diode (LED), Induction, and Plasma light sources : in roadway lighting. The most commonly claimed benefits of the new lighting systems include increased reliabi...

Single nanowire green InGaN/GaN light emitting diodes

NASA Astrophysics Data System (ADS)

Zhang, Guogang; Li, Ziyuan; Yuan, Xiaoming; Wang, Fan; Fu, Lan; Zhuang, Zhe; Ren, Fang-Fang; Liu, Bin; Zhang, Rong; Tan, Hark Hoe; Jagadish, Chennupati

2016-10-01

Single nanowire (NW) green InGaN/GaN light-emitting diodes (LEDs) were fabricated by top-down etching technology. The electroluminescence (EL) peak wavelength remains approximately constant with an increasing injection current in contrast to a standard planar LED, which suggests that the quantum-confined Stark effect is significantly reduced in the single NW device. The strain relaxation mechanism is studied in the single NW LED using Raman scattering analysis. As compared to its planar counterpart, the EL peak of the NW LED shows a redshift, due to electric field redistribution as a result of changes in the cavity mode pattern after metallization. Our method has important implication for single NW optoelectronic device applications.

NASA Ames UV-LED Poster Overview

NASA Technical Reports Server (NTRS)

Jaroux, Belgacem Amar

2015-01-01

UV-LED is a small satellite technology demonstration payload being flown on the Saudisat-4 spacecraft that is demonstrating non-contacting charge control of an isolated or floating mass using new solid-state ultra-violet light emitting diodes (UV-LEDs). Integrated to the rest of the spacecraft and launched on a Dnepr in June 19, 2014, the project is a collaboration between the NASA Ames Research Center (ARC), Stanford University, and King Abdulaziz City for Science and Technology (KACST). Beginning with its commissioning in December, 2015, the data collected by UV-LED have validated a novel method of charge control that will improve the performance of drag-free spacecraft allowing for concurrent science collection during charge management operations as well as reduce the mass, power and volume required while increasing lifetime and reliability of a charge management subsystem. UV-LED continues to operate, exploring new concepts in non-contacting charge control and collecting data crucial to understanding the lifetime of ultra-violet light emitting diodes in space. These improvements are crucial to the success of ground breaking missions such as LISA and BBO, and demonstrates the ability of low cost small satellite missions to provide technological advances that far exceed mission costs.

Optical design of a light-emitting diode lamp for a maritime lighthouse.

PubMed

Jafrancesco, D; Mercatelli, L; Sansoni, P; Fontani, D; Sani, E; Coraggia, S; Meucci, M; Francini, F

2015-04-10

Traffic signaling is an emerging field for light-emitting diode (LED) applications. This sustainable power-saving illumination technology can be used in maritime signaling thanks to the recently updated norms, where the possibility to utilize LED sources is explicitly cited, and to the availability of high-power white LEDs that, combined with suitable lenses, permit us to obtain well-collimated beams. This paper describes the optical design of a LED-based lamp that can replace a traditional lamp in an authentic marine lighthouse. This source recombines multiple separated LEDs realizing a quasi-punctual localized source. Advantages can be lower energy consumption, higher efficiency, longer life, fewer faults, slower aging, and minor maintenance costs. The proposed LED source allows us to keep and to utilize the old Fresnel lenses of the lighthouse, which very often have historical value.

NASA light emitting diode medical applications from deep space to deep sea

NASA Astrophysics Data System (ADS)

Whelan, Harry T.; Buchmann, Ellen V.; Whelan, Noel T.; Turner, Scott G.; Cevenini, Vita; Stinson, Helen; Ignatius, Ron; Martin, Todd; Cwiklinski, Joan; Meyer, Glenn A.; Hodgson, Brian; Gould, Lisa; Kane, Mary; Chen, Gina; Caviness, James

2001-02-01

This work is supported and managed through the NASA Marshall Space Flight Center-SBIR Program. LED-technology developed for NASA plant growth experiments in space shows promise for delivering light deep into tissues of the body to promote wound healing and human tissue growth. We present the results of LED-treatment of cells grown in culture and the effects of LEDs on patients' chronic and acute wounds. LED-technology is also biologically optimal for photodynamic therapy of cancer and we discuss our successes using LEDs in conjunction with light-activated chemotherapeutic drugs. .

Enhancement of Radiative Efficiency with Staggered InGaN Quantum Well Light Emitting Diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tansu, Nelson; Dierolf, Volkmar; Huang, Gensheng

2011-07-14

The technology on the large overlap InGaN QWs developed in this program is currently implemented in commercial technology in enhancing the internal quantum efficiency in major LED industry in US and Asia. The scientific finding from this work supported by the DOE enabled the implementation of this step-like staggered quantum well in the commercial LEDs.

Reliability improvements in tunable Pb1-xSnxSe diode lasers

NASA Technical Reports Server (NTRS)

Linden, K. J.; Butler, J. F.; Nill, K. W.; Reeder, R. E.

1980-01-01

Recent developments in the technology of Pb-salt diode lasers which have led to significant improvements in reliability and lifetime, and to improved operation at very long wavelengths are described. A combination of packaging and contacting-metallurgy improvements has led to diode lasers that are stable both in terms of temperature cycling and shelf-storage time. Lasers cycled over 500 times between 77 K and 300 K have exhibited no measurable changes in either electrical contact resistance or threshold current. Utilizing metallurgical contacting process, both lasers and experimental n-type and p-type bulk materials are shown to have electrical contact resistance values that are stable for shelf storage periods well in excess of one year. Problems and experiments which have led to devices with improved performance stability are discussed. Stable device configurations achieved for material compositions yielding lasers which operate continuously at wavelengths as long as 30.3 micrometers are described.

Monolithic integration of GaN-based light-emitting diodes and metal-oxide-semiconductor field-effect transistors.

PubMed

Lee, Ya-Ju; Yang, Zu-Po; Chen, Pin-Guang; Hsieh, Yung-An; Yao, Yung-Chi; Liao, Ming-Han; Lee, Min-Hung; Wang, Mei-Tan; Hwang, Jung-Min

2014-10-20

In this study, we report a novel monolithically integrated GaN-based light-emitting diode (LED) with metal-oxide-semiconductor field-effect transistor (MOSFET). Without additionally introducing complicated epitaxial structures for transistors, the MOSFET is directly fabricated on the exposed n-type GaN layer of the LED after dry etching, and serially connected to the LED through standard semiconductor-manufacturing technologies. Such monolithically integrated LED/MOSFET device is able to circumvent undesirable issues that might be faced by other kinds of integration schemes by growing a transistor on an LED or vice versa. For the performances of resulting device, our monolithically integrated LED/MOSFET device exhibits good characteristics in the modulation of gate voltage and good capability of driving injected current, which are essential for the important applications such as smart lighting, interconnection, and optical communication.

A CMOS Time-Resolved Fluorescence Lifetime Analysis Micro-System

PubMed Central

Rae, Bruce R.; Muir, Keith R.; Gong, Zheng; McKendry, Jonathan; Girkin, John M.; Gu, Erdan; Renshaw, David; Dawson, Martin D.; Henderson, Robert K.

2009-01-01

We describe a CMOS-based micro-system for time-resolved fluorescence lifetime analysis. It comprises a 16 × 4 array of single-photon avalanche diodes (SPADs) fabricated in 0.35 μm high-voltage CMOS technology with in-pixel time-gated photon counting circuitry and a second device incorporating an 8 × 8 AlInGaN blue micro-pixellated light-emitting diode (micro-LED) array bump-bonded to an equivalent array of LED drivers realized in a standard low-voltage 0.35 μm CMOS technology, capable of producing excitation pulses with a width of 777 ps (FWHM). This system replaces instrumentation based on lasers, photomultiplier tubes, bulk optics and discrete electronics with a PC-based micro-system. Demonstrator lifetime measurements of colloidal quantum dot and Rhodamine samples are presented. PMID:22291564

White LEDs and modules in chip-on-board technology for general lighting

NASA Astrophysics Data System (ADS)

Hartmann, Paul; Wenzl, Franz P.; Sommer, Christian; Pachler, Peter; Hoschopf, Hans; Schweighart, Marko; Hartmann, Martin; Kuna, Ladislav; Jakopic, Georg; Leising, Guenther; Tasch, Stefan

2006-08-01

At present, light-emitting diode (LED) modules in various shapes are developed and designed for the general lighting, advertisement, emergency lighting, design and architectural markets. To compete with and to surpass the performance of traditional lighting systems, enhancement of Lumen output and the white light quality as well as the thermal management and the luminary integration are key factors for success. Regarding these issues, white LEDs based on the chip-on-board (COB) technology show pronounced advantages. State-of-the-art LEDs exploiting this technology are now ready to enter the general lighting segments. We introduce and discuss the specific properties of the Tridonic COB technology dedicated for general lighting. This technology, in combination with a comprehensive set of tools to improve and to enhance the Lumen output and the white light quality, including optical simulation, is the scaffolding for the application of white LEDs in emerging areas, for which an outlook will be given.

Lighting theory and luminous characteristics of white light-emitting diodes

NASA Astrophysics Data System (ADS)

Uchida, Yuji; Taguchi, Tsunemasa

2005-12-01

A near-ultraviolet (UV)-based white light-emitting diode (LED) lighting system linked with a semiconductor InGaN LED and compound phosphors for general lighting applications is proposed. We have developed for the first time a novel type of high-color rendering index (Ra) white LED light source, which is composed of near-UV LED and multiphosphor materials showing orange (O), yellow (Y), green (G), and blue (B) emissions. The white LED shows the superior characteristics of luminous efficacy and high Ra to be about 40 lm/W and 93, respectively. Luminous and chromaticity characteristics, and their spectral distribution of the present white LED can be evaluated using the multipoint LED light source theory. It is revealed that the OYGB white LED can provide better irradiance properties than that of conventional white LEDs. Near-UV white LED technologies, in conjunction with phosphor blends, can offer superior color uniformity, high Ra, and excellent light quality. Consequently we are carrying out a "white LEDs for medical applications" program in the second phase of this national project from 2004 to 2009.

Phosphor-Free InGaN White Light Emitting Diodes Using Flip-Chip Technology

PubMed Central

Li, Ying-Chang; Chang, Liann-Be; Chen, Hou-Jen; Yen, Chia-Yi; Pan, Ke-Wei; Huang, Bohr-Ran; Kuo, Wen-Yu; Chow, Lee; Zhou, Dan; Popko, Ewa

2017-01-01

Monolithic phosphor-free two-color gallium nitride (GaN)-based white light emitting diodes (LED) have the potential to replace current phosphor-based GaN white LEDs due to their low cost and long life cycle. Unfortunately, the growth of high indium content indium gallium nitride (InGaN)/GaN quantum dot and reported LED’s color rendering index (CRI) are still problematic. Here, we use flip-chip technology to fabricate an upside down monolithic two-color phosphor-free LED with four grown layers of high indium quantum dots on top of the three grown layers of lower indium quantum wells separated by a GaN tunneling barrier layer. The photoluminescence (PL) and electroluminescence (EL) spectra of this white LED reveal a broad spectrum ranging from 475 to 675 nm which is close to an ideal white-light source. The corresponding color temperature and color rendering index (CRI) of the fabricated white LED, operated at 350, 500, and 750 mA, are comparable to that of the conventional phosphor-based LEDs. Insights of the epitaxial structure and the transport mechanism were revealed through the TEM and temperature dependent PL and EL measurements. Our results show true potential in the Epi-ready GaN white LEDs for future solid state lighting applications. PMID:28772792

Technology of Wide Color Gamut Backlight with Light-Emitting Diode for Liquid Crystal Display Television

NASA Astrophysics Data System (ADS)

Kakinuma, Koichiro

2006-05-01

The development of light-emitting diode (LED) backlight a wide-color-gamut and mercury-free has become active in liquid crystal display (LCD) industry. Reports on the development of backlights, such as a direct illumination-type back-light and a guided light illumination-type LED backlight were published. The fabrication of an actual commercial product has been progressing under this active development. Sony Corporation launched an LED-backlit LCD television (TV) model, dubbed QUALIA 005, the world’s first home-use television featuring LED backlighting. This product offers a very wide color reproduction range, delivering a color gamut of 150% of that typically achieved by conventional televisions. In this paper, the background of the development of the LED backlight system “TriluminosTM” and the technologies used to realize the wide color gamut are discussed. The main issues to be solved for the commercialization were how to reduce the brightness/color non uniformity of the backlight and how to treat heat generation from the LED. The standardization of wide color space definition xvYCC and LED backlight LCD television combination is expected to result in a more vivid and correct color expression, and a forecast that extends to the market in the future.

Monolithic Flexible Vertical GaN Light-Emitting Diodes for a Transparent Wireless Brain Optical Stimulator.

PubMed

Lee, Han Eol; Choi, JeHyuk; Lee, Seung Hyun; Jeong, Minju; Shin, Jung Ho; Joe, Daniel J; Kim, DoHyun; Kim, Chang Wan; Park, Jung Hwan; Lee, Jae Hee; Kim, Daesoo; Shin, Chan-Soo; Lee, Keon Jae

2018-05-18

Flexible inorganic-based micro light-emitting diodes (µLEDs) are emerging as a significant technology for flexible displays, which is an important area for bilateral visual communication in the upcoming Internet of Things era. Conventional flexible lateral µLEDs have been investigated by several researchers, but still have significant issues of power consumption, thermal stability, lifetime, and light-extraction efficiency on plastics. Here, high-performance flexible vertical GaN light-emitting diodes (LEDs) are demonstrated by silver nanowire networks and monolithic fabrication. Transparent, ultrathin GaN LED arrays adhere to a human fingernail and stably glow without any mechanical deformation. Experimental studies provide outstanding characteristics of the flexible vertical μLEDs (f-VLEDs) with high optical power (30 mW mm -2 ), long lifetime (≈12 years), and good thermal/mechanical stability (100 000 bending/unbending cycles). The wireless light-emitting system on the human skin is successfully realized by transferring the electrical power f-VLED. Finally, the high-density GaN f-VLED arrays are inserted onto a living mouse cortex and operated without significant histological damage of brain. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Shining a Light on Electronics

ERIC Educational Resources Information Center

Statler, James D.

2009-01-01

While they produced a limited amount of light when first introduced, light-emitting diode (LED) lights offered the benefit of rarely burning out. As a result, they were initially used primarily as indicator lights. Advances in the technology have made available LEDs that produce far brighter light, and one application that has come to market is…

LED lighting – modification of growth, metabolism, yield and flour composition in wheat by spectral quality and intensity

USDA-ARS?s Scientific Manuscript database

The use of light-emitting diode (LED) technology for plant cultivation under controlled environmental conditions can result in significant reductions in energy consumption. However, there is still a lack of detailed information on the lighting conditions required for optimal growth of different plan...

Spectral matching research for light-emitting diode-based neonatal jaundice therapeutic device light source

NASA Astrophysics Data System (ADS)

Gan, Ruting; Guo, Zhenning; Lin, Jieben

2015-09-01

To decrease the risk of bilirubin encephalopathy and minimize the need for exchange transfusions, we report a novel design for light source of light-emitting diode (LED)-based neonatal jaundice therapeutic device (NJTD). The bilirubin absorption spectrum in vivo was regarded as target. Based on spectral constructing theory, we used commercially available LEDs with different peak wavelengths and full width at half maximum as matching light sources. Simple genetic algorithm was first proposed as the spectral matching method. The required LEDs number at each peak wavelength was calculated, and then, the commercial light source sample model of the device was fabricated to confirm the spectral matching technology. In addition, the corresponding spectrum was measured and the effect was analyzed finally. The results showed that fitted spectrum was very similar to the target spectrum with 98.86 % matching degree, and the actual device model has a spectrum close to the target with 96.02 % matching degree. With higher fitting degree and efficiency, this matching algorithm is very suitable for light source matching technology of LED-based spectral distribution, and bilirubin absorption spectrum in vivo will be auspicious candidate for the target spectrum of new LED-based NJTD light source.

A perspective perception on the applications of light-emitting diodes.

PubMed

Nair, Govind B; Dhoble, S J

2015-12-01

Light-emitting diodes (LEDs) continue to penetrate the global market; their pervasiveness clearly being felt in such diverse fields as technological, socio-economic and commercial interests. The multi-billion dollar LED market is shared by various segments, including office and household lighting, street lighting, the automobile industry, traffic signals, backlighting for hand-held devices, indoor and outdoor signs and indicators, medicine, communication systems, crop cultivation using artificial light and many more. The technological development of LEDs has undergone many phases in different parts of the world. From the early discovery of luminescence to the invention of highly efficient organic LEDs, researchers have worked with the prime purpose of improving the performance of luminaires. The need to infuse the market with more efficient and cheaper products has been prevalent from the start. LEDs are a result of this uncontrolled desire of researchers to develop superior products that would displace existing products in the market. To understand what led to the current prominence of LEDs, we give a brief historical overview of the field followed by a thorough discussion of the positive features of LEDs. This work includes the basic requirements, advantages and disadvantages of LEDs in a variety of applications. A brief description of the diverse applications of LED in fields such as lighting, indicators and displays, farming, medicine and communication is given. Considerable importance is placed on discussing the possible difficulties that must be overcome before using LEDs in commercial applications. Copyright © 2015 John Wiley & Sons, Ltd.

Wheat Under LED's (Light Emitting Diodes)

NASA Technical Reports Server (NTRS)

2004-01-01

Astroculture is a suite of technologies used to produce and maintain a closed controlled environment for plant growth. The two most recent missions supported growth of potato, dwarf wheat, and mustard plants, and provided scientists with the first opportunity to conduct true plant research in space. Light emitting diodes have particular usefulness for plant growth lighting because they emit a much smaller amount of radiant heat than do conventional lighting sources and because they have potential of directing a higher percentage of the emitted light onto plants surfaces. Furthermore, the high output LED's have emissions in the 600-700 nm waveband, which is of highest efficiency for photosynthesis by plants.

GaAs/AlGaAs core multishell nanowire-based light-emitting diodes on Si.

PubMed

Tomioka, Katsuhiro; Motohisa, Junichi; Hara, Shinjiroh; Hiruma, Kenji; Fukui, Takashi

2010-05-12

We report on integration of GaAs nanowire-based light-emitting-diodes (NW-LEDs) on Si substrate by selective-area metalorganic vapor phase epitaxy. The vertically aligned GaAs/AlGaAs core-multishell nanowires with radial p-n junction and NW-LED array were directly fabricated on Si. The threshold current for electroluminescence (EL) was 0.5 mA (current density was approximately 0.4 A/cm(2)), and the EL intensity superlinearly increased with increasing current injections indicating superluminescence behavior. The technology described in this letter could help open new possibilities for monolithic- and on-chip integration of III-V NWs on Si.

Light Emitting Diodes (LEDs)

NASA Technical Reports Server (NTRS)

1997-01-01

A special lighting technology was developed for space-based commercial plant growth research on NASA's Space Shuttle. Surgeons have used this technology to treat brain cancer on Earth, in two successful operations. The treatment technique, called Photodynamic Therapy, requires the surgeon to use tiny, pinhead-size Light Emitting Diodes (LEDs) (a source that releases long wavelengths of light ) to activate light-sensitive, tumor-treating drugs. 'A young woman operated on in May 1999 has fully recovered with no complications and no evidence of the tumor coming back,' said Dr. Harry Whelan, a pediatric neurologist at the Medical Hospital of Wisconsin in Milwaukee. Laser light has been used for this type of surgery in the past, but the LED light illuminates through all nearby tissues, reaching parts of a tumor that shorter wavelengths of laser light carnot. The new probe is safer because the longer wavelengths of light are cooler than the shorter wavelengths of laser light, making the LED less likely to injure normal brain tissue near the tumor. It can be used for hours at a time while still remaining cool to the touch. The LED light source is compact, about the size of a briefcase, and can be purchased for a fraction of the cost of a laser. The LEDs, developed and managed by NASA's Marshall Space Flight Center, have been used on seven Space Shuttle flights inside the Microgravity Astroculture Facility. This technology has also been successfully used to further commercial research in crop growth.

Evaluating the impact of LED bulb development on the economic viability of ultraviolet technology for disinfection.

PubMed

Ibrahim, Mohamed A S; MacAdam, Jitka; Autin, Olivier; Jefferson, Bruce

2014-01-01

Ultraviolet (UV) technologies have been very successful in disinfection applications due to their ability to inactivate microorganisms without producing harmful disinfection by-products. However, there have been a number of concerns associated with the use of conventional UV systems such as hazardous mercury content, high capital investment and reduced electrical efficiency. These concerns have set limitations for the use of UV processes. The study evaluates the development of light emitting diode (LED) technology as an alternative UV source over the last 5 years, analyses the projections provided by the researchers and UV LED manufacturers and presents the information in a cost model with the aim to predict the timeline at which UV LED will compete with traditional UV low pressure high output technology in the commercial market at full-scale residential and industrial disinfection applications.

Analysis of energy efficient highway lighting retrofits.

DOT National Transportation Integrated Search

2015-06-01

Solid state lighting technology is advancing rapidly to a point where light emitting diode (LED) lighting : systems can be viable replacements for existing lighting systems using high pressure sodium (HPS). The : present report summarizes analyses co...

Light emitting diodes as a plant lighting source

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bula, R.J.; Tennessen, D.J.; Morrow, R.C.

1994-12-31

Electroluminescence in solid materials is defined as the generation of light by the passage of an electric current through a body of solid material under an applied electric field. A specific type of electroluminescence, first noted by Lossew in 1923, involves the generation of photons when electrons are passed through a p-n junction of certain solid materials (junction of a n-type semiconductor, an electron donor, and a p-type semiconductor, an electron acceptor). Development efforts to translate these observations into visible light emitting devices, however, was not undertaken until the 1950s. The term, light emitting diode (LEDs), was first used inmore » a report by Wolfe, et al., in 1955. The development of this light emitting semiconductor technology dates back less than 30 years. During this period of time, the LED has evolved from a rare and expensive light generating device to one of the most widely used electronic components. The most popular applications of the LED are as indicators or as optoelectronic switches. However, several recent advances in LED technology have made possible the utilization of LEDs for applications that require a high photon flux, such as for plant lighting in controlled environments. The new generation of LEDs based on a gallium aluminum arsenide (GaAlAS) semiconductor material fabricated as a double heterostructure on a transparent substrate has opened up many new applications for these LEDs.« less

Revolution Now 2016

DOE Office of Scientific and Technical Information (OSTI.GOV)

Paul Donohoo-Vallett

Revolution Now is an annually updated report produced by the Energy Department’s Office of Energy Efficiency and Renewable Energy that documents the accelerated deployment of five clean energy technologies thriving in the U.S. market – wind turbines, solar technologies for both utility-scale and distributed photovoltaic (PV), electric vehicles (EVs) and light-emitting diodes (LEDs).

Complete solid state lighting (SSL) line at CEA LETI

NASA Astrophysics Data System (ADS)

Robin, I. C.; Ferret, P.; Dussaigne, A.; Bougerol, C.; Salomon, D.; Chen, X. J.; Charles, M.; Tchoulfian, P.; Gasse, A.; Lagrange, A.; Consonni, M.; Bono, H.; Levy, F.; Desieres, Y.; Aitmani, A.; Makram-Matta, S.; Bialic, E.; Gorrochategui, P.; Mendizabal, L.

2014-09-01

With a long experience in optoelectronics, CEA-LETI has focused on Light Emitting Diode (LED) lighting since 2006. Today, all the technical challenges in the implementation of GaN LED based solid state lighting (SSL) are addressed at CEA-LETI who is now an RandD player throughout the entire value chain of LED lighting. The SSL Line at CEA-LETI first deals with the simulation of the active structures and LED devices. Then the growth is addressed in particular 2D growth on 200 mm silicon substrates. Then, technological steps are developed for the fabrication of LED dies with innovative architectures. For instance, Versatile LED Array Devices are currently being developed with a dedicated μLED technology. The objective in this case is to achieve monolithical LED arrays reported and interconnected through a silicon submount. In addition to the required bonding and 3D integration technologies, new solutions for LED chip packaging, thermal management of LED lamps and luminaires are also addressed. LETI is also active in Smart Lighting concepts which offer the possibility of new application fields for SSL technologies. An example is the recent development at CEA LETI of Visible Light Communication Technology also called LiFi. With this technology, we demonstrated a transmission rate up to 10 Mb/s and real time HD-Video transmission.

Beacon system based on light-emitting diode sources for runways lighting

NASA Astrophysics Data System (ADS)

Montes, Mario González; Vázquez, Daniel; Fernandez-Balbuena, Antonio A.; Bernabeu, Eusebio

2014-06-01

New aeronautical ground lighting techniques are becoming increasingly important to ensure the safety and reduce the maintenance costs of the plane's tracks. Until recently, tracks had embedded lighting systems whose sources were based on incandescent lamps. But incandescent lamps have several disadvantages: high energy consumption and frequent breakdowns that result in high maintenance costs (lamp average life-time is ˜1500 operating hours) and the lamp's technology has a lack of new lighting functions, such as signal handling and modification. To solve these problems, the industry has developed systems based on light-emitting diode (LED) technology with improved features: (1) LED lighting consumes one tenth the power, (2) it improves preventive maintenance (an LED's lifetime range is between 25,000 and 100,000 hours), and (3) LED lighting technology can be controlled remotely according to the needs of the track configuration. LEDs have been in use for more than three decades, but only recently, around 2002, have they begun to be used as visual aids, representing the greatest potential change for airport lighting since their inception in the 1920s. Currently, embedded LED systems are not being broadly used due to the specific constraints of the rules and regulations of airports (beacon dimensions, power system technology, etc.). The fundamental requirements applied to embedded lighting systems are to be hosted on a volume where the dimensions are usually critical and also to integrate all the essential components for operation. An embedded architecture that meets the lighting regulations for airport runways is presented. The present work is divided into three main tasks: development of an optical system to optimize lighting according to International Civil Aviation Organization, manufacturing prototype, and model validation.

Low cost batch fabrication of microdevices using ultraviolet light-emitting diode photolithography technique

NASA Astrophysics Data System (ADS)

Lee, Neam Heng; Swamy, Varghese; Ramakrishnan, Narayanan

2016-01-01

Solid-state technology has enabled the use of light-emitting diodes (LEDs) in lithography systems due to their low cost, low power requirement, and higher efficiency relative to the traditional mercury lamp. Uniform irradiance distribution is essential for photolithography to ensure the critical dimension (CD) of the feature fabricated. However, light illuminated from arrays of LEDs can have nonuniform irradiance distribution, which can be a problem when using LED arrays as a source to batch-fabricate multiple devices on a large wafer piece. In this study, the irradiance distribution of an UV LED array was analyzed, and the separation distance between light source and mask optimized to obtain maximum irradiance uniformity without the use of a complex lens. Further, employing a diffuser glass enhanced the fabrication process and the CD loss was minimized to an average of 300 nm. To assess the performance of the proposed technology, batch fabrication of surface acoustic wave devices on lithium niobate substrate was carried out, and all the devices exhibited identical insertion loss of -18 dB at a resonance frequency of 39.33 MHz. The proposed low-cost UV lithography setup can be adapted in academic laboratories for research and teaching on microdevices.

LED Street Lights in Alaska

DOT National Transportation Integrated Search

2010-09-01

During winter nights in Alaska, streetlights often remain lit more than half the day, using energy all the while. Around the nation, communities are exploring the use of : light-emitting diode technology for lighting streets and reducing energy use. ...

Benefit from NASA

NASA Image and Video Library

1997-01-01

A special lighting technology was developed for space-based commercial plant growth research on NASA's Space Shuttle. Surgeons have used this technology to treat brain cancer on Earth, in two successful operations. The treatment technique called photodynamic therapy, requires the surgeon to use tiny pinhead-size Light Emitting Diodes (LEDs) (a source releasing long wavelengths of light) to activate light-sensitive, tumor-treating drugs. Laser light has been used for this type of surgery in the past, but the LED light illuminates through all nearby tissues, reaching parts of a tumor that shorter wavelengths of laser light carnot. The new probe is safer because the longer wavelengths of light are cooler than the shorter wavelengths of laser light, making the LED less likely to injure normal brain tissue near the tumor. It can also be used for hours at a time while still remaining cool to the touch. The LED probe consists of 144 tiny pinhead-size diodes, is 9-inches long, and about one-half-inch in diameter. The small balloon aids in even distribution of the light source. The LED light source is compact, about the size of a briefcase, and can be purchased for a fraction of the cost of a laser. The probe was developed for photodynamic cancer therapy by the Marshall Space Flight Center under a NASA Small Business Innovative Research program grant.

Three dimensional indoor positioning based on visible light with Gaussian mixture sigma-point particle filter technique

NASA Astrophysics Data System (ADS)

Gu, Wenjun; Zhang, Weizhi; Wang, Jin; Amini Kashani, M. R.; Kavehrad, Mohsen

2015-01-01

Over the past decade, location based services (LBS) have found their wide applications in indoor environments, such as large shopping malls, hospitals, warehouses, airports, etc. Current technologies provide wide choices of available solutions, which include Radio-frequency identification (RFID), Ultra wideband (UWB), wireless local area network (WLAN) and Bluetooth. With the rapid development of light-emitting-diodes (LED) technology, visible light communications (VLC) also bring a practical approach to LBS. As visible light has a better immunity against multipath effect than radio waves, higher positioning accuracy is achieved. LEDs are utilized both for illumination and positioning purpose to realize relatively lower infrastructure cost. In this paper, an indoor positioning system using VLC is proposed, with LEDs as transmitters and photo diodes as receivers. The algorithm for estimation is based on received-signalstrength (RSS) information collected from photo diodes and trilateration technique. By appropriately making use of the characteristics of receiver movements and the property of trilateration, estimation on three-dimensional (3-D) coordinates is attained. Filtering technique is applied to enable tracking capability of the algorithm, and a higher accuracy is reached compare to raw estimates. Gaussian mixture Sigma-point particle filter (GM-SPPF) is proposed for this 3-D system, which introduces the notion of Gaussian Mixture Model (GMM). The number of particles in the filter is reduced by approximating the probability distribution with Gaussian components.

Multiple night-time light-emitting diode lighting strategies impact grassland invertebrate assemblages.

PubMed

Davies, Thomas W; Bennie, Jonathan; Cruse, Dave; Blumgart, Dan; Inger, Richard; Gaston, Kevin J

2017-07-01

White light-emitting diodes (LEDs) are rapidly replacing conventional outdoor lighting technologies around the world. Despite rising concerns over their impact on the environment and human health, the flexibility of LEDs has been advocated as a means of mitigating the ecological impacts of globally widespread outdoor night-time lighting through spectral manipulation, dimming and switching lights off during periods of low demand. We conducted a three-year field experiment in which each of these lighting strategies was simulated in a previously artificial light naïve grassland ecosystem. White LEDs both increased the total abundance and changed the assemblage composition of adult spiders and beetles. Dimming LEDs by 50% or manipulating their spectra to reduce ecologically damaging wavelengths partially reduced the number of commoner species affected from seven to four. A combination of dimming by 50% and switching lights off between midnight and 04:00 am showed the most promise for reducing the ecological costs of LEDs, but the abundances of two otherwise common species were still affected. The environmental consequences of using alternative lighting technologies are increasingly well established. These results suggest that while management strategies using LEDs can be an effective means of reducing the number of taxa affected, averting the ecological impacts of night-time lighting may ultimately require avoiding its use altogether. © 2017 John Wiley & Sons Ltd.

Implementation of a Low-Cost Automated LED Photometer for Enzymatic Reaction Detection to Teach Basic Bioelectronics Technologies in Vocational High Schools

ERIC Educational Resources Information Center

Chen, Huai-Yi; Nieh, Hwa-Ming; Yang, Ming-Feng; Chou, Yu-Kung; Chung, Jui-Hsu; Liou, Je-Wen

2016-01-01

This study proposes a home-assembled, low-cost blue light-emitting diode (LED) photometer that uses simple and low-cost hardware and software, costing about US $150. This 425-nm wavelength photometer is controlled by an 89C51 microcontroller chip. Glucose concentration detection experiments involving enzyme coupling reactions were carried out to…

RGB LED with smart control in the backlight and lighting

NASA Astrophysics Data System (ADS)

Ku, Johnson C. S.; Lee, C. J.

2008-02-01

To improve the LED (Light Emitting Diode) efficacy is the major consideration when the backlight and lighting system are implemented. An important source of poor efficacy come from the chip process or heat dissipation. White LED used blue chip with phosphor is the current solution and inadequate for the tunable color temperature system. The use of RGB (Red, Green and Blue) LED with smart control is presented in this study. The resulting coupled optical and thermal shows the better performance when it is synthesized in conjunction with a degree of color mixing technology.

Applications of Light Emitting Diodes in Health Care.

PubMed

Dong, Jianfei; Xiong, Daxi

2017-11-01

Light emitting diodes (LEDs) have become the main light sources for general lighting, due to their high lumen efficiency and long life time. Moreover, their high bandwidth and the availability of diverse wavelength contents ranging from ultraviolet to infrared empower them with great controllability in tuning brightness, pulse durations and spectra. These parameters are the essential ingredients of the applications in medical imaging and therapies. Despite the fast advances in both LED technologies and their applications, few reviews have been seen to link the controllable emission properties of LEDs to these applications. The objective of this paper is to bridge this gap by reviewing the main control techniques of LEDs that enable creating enhanced lighting patterns for imaging and generating effective photon doses for photobiomodulation. This paper also provides the basic mechanisms behind the effective LED therapies in treating cutaneous and neurological diseases. The emerging field of optogenetics is also discussed with a focus on the application of LEDs. The multidisciplinary topics reviewed in this paper can help the researchers in LEDs, imaging, light therapy and optogenetics better understand the basic principles in each other's field; and hence to stimulate the application of LEDs in health care.

Transcranial LED therapy for cognitive dysfunction in chronic, mild traumatic brain injury: two case reports

NASA Astrophysics Data System (ADS)

Naeser, Margaret A.; Saltmarche, Anita; Krengel, Maxine H.; Hamblin, Michael R.; Knight, Jeffrey A.

2010-02-01

Two chronic, traumatic brain injury (TBI) cases are presented, where cognitive function improved following treatment with transcranial light emitting diodes (LEDs). At age 59, P1 had closed-head injury from a motor vehicle accident (MVA) without loss of consciousness and normal MRI, but unable to return to work as development specialist in internet marketing, due to cognitive dysfunction. At 7 years post-MVA, she began transcranial LED treatments with cluster heads (2.1" diameter with 61 diodes each - 9x633nm, 52x870nm; 12-15mW per diode; total power, 500mW; 22.2 mW/cm2) on bilateral frontal, temporal, parietal, occipital and midline sagittal areas (13.3 J/cm2 at scalp, estimated 0.4 J/cm2 to brain cortex per area). Prior to transcranial LED, focused time on computer was 20 minutes. After 2 months of weekly, transcranial LED treatments, increased to 3 hours on computer. Performs nightly home treatments (now, 5 years, age 72); if stops treating >2 weeks, regresses. P2 (age 52F) had history of closed-head injuries related to sports/military training and recent fall. MRI shows fronto-parietal cortical atrophy. Pre-LED, was not able to work for 6 months and scored below average on attention, memory and executive function. Performed nightly transcranial LED treatments at home (9 months) with similar LED device, on frontal and parietal areas. After 4 months of LED treatments, returned to work as executive consultant, international technology consulting firm. Neuropsychological testing (post- 9 months of transcranial LED) showed significant improvement in memory and executive functioning (range, +1 to +2 SD improvement). Case 2 reported reduction in PTSD symptoms.

Visual Electricity Demonstrator

NASA Astrophysics Data System (ADS)

Lincoln, James

2017-09-01

The Visual Electricity Demonstrator (VED) is a linear diode array that serves as a dynamic alternative to an ammeter. A string of 48 red light-emitting diodes (LEDs) blink one after another to create the illusion of a moving current. Having the current represented visually builds an intuitive and qualitative understanding about what is happening in a circuit. In this article, I describe several activities for this device and explain how using this technology in the classroom can enhance the understanding and appreciation of physics.

Design of an Oximeter Based on LED-LED Configuration and FPGA Technology

PubMed Central

Stojanovic, Radovan; Karadaglic, Dejan

2013-01-01

A fully digital photoplethysmographic (PPG) sensor and actuator has been developed. The sensing circuit uses one Light Emitting Diode (LED) for emitting light into human tissue and one LED for detecting the reflectance light from human tissue. A Field Programmable Gate Array (FPGA) is used to control the LEDs and determine the PPG and Blood Oxygen Saturation (SpO2). The configurations with two LEDs and four LEDs are developed for measuring PPG signal and Blood Oxygen Saturation (SpO2). N-LEDs configuration is proposed for multichannel SpO2 measurements. The approach resulted in better spectral sensitivity, increased and adjustable resolution, reduced noise, small size, low cost and low power consumption. PMID:23291575

Demonstration Assessment of Light-Emitting Diode Parking Structure Lighting at U.S. Department of Labor Headquarters

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kinzey, Bruce R.; Myer, Michael

2013-03-01

This report documents a solid-state lighting (SSL) technology demonstration at the parking structure of the U.S. Department of Labor (DOL) Headquarters in Washington, DC, in which light-emitting diode (LED) luminaires were substituted for the incumbent high-pressure sodium (HPS) luminaires and evaluated for relative light quantity and performance. The demonstration results show energy savings of 52% from the initial conversion of HPS to the LED product. These savings were increased to 88% by using occupancy sensor controls that were ultimately set to reduce power to 10% of high state operation after a time delay of 2.5 minutes. Because of the relativelymore » high cost of the LED luminaires at their time of purchase for this project (2010), the simple payback periods were 6.5 years and 4.9 years for retrofit and new construction scenarios, respectively. Staff at DOL Headquarters reported high satisfaction with the operation of the LED product.« less

Dr. Harry Whelan With the Light Emitting Diode Probe

NASA Technical Reports Server (NTRS)

1999-01-01

The red light from the Light Emitting Diode (LED) probe shines through the fingers of Dr. Harry Whelan, a pediatric neurologist at the Children's Hospital of Wisconsin in Milwaukee. Dr. Whelan uses the long waves of light from the LED surgical probe to activate special drugs that kill brain tumors. Laser light previously has been used for this type of surgery, but the LED light illuminates through all nearby tissues, reaching parts of tumors that shorter wavelengths of laser light carnot. The new probe is safer because the longer wavelengths of light are cooler than the shorter wavelengths of laser light, making the LED less likely to injure normal brain tissue near the tumor. Also, it can be used for hours at a time while still remaining cool to the touch. The probe was developed for photodynamic cancer therapy under a NASA Small Business Innovative Research Program grant. The program is part of NASA's Technology Transfer Department at the Marshall Space Flight Center.

Beyond conventional c-plane GaN-based light emitting diodes: A systematic exploration of LEDs on semi-polar orientations

NASA Astrophysics Data System (ADS)

Monavarian, Morteza

Despite enormous efforts and investments, the efficiency of InGaN-based green and yellow-green light emitters remains relatively low, and that limits progress in developing full color display, laser diodes, and bright light sources for general lighting. The low efficiency of light emitting devices in the green-to-yellow spectral range, also known as the "Green Gap", is considered a global concern in the LED industry. The polar c-plane orientation of GaN, which is the mainstay in the LED industry, suffers from polarization-induced separation of electrons and hole wavefunctions (also known as the "quantum confined Stark effect") and low indium incorporation efficiency that are the two main factors that contribute to the Green Gap phenomenon. One possible approach that holds promise for a new generation of green and yellow light emitting devices with higher efficiency is the deployment of nonpolar and semi-polar crystallographic orientations of GaN to eliminate or mitigate polarization fields. In theory, the use of other GaN planes for light emitters could also enhance the efficiency of indium incorporation compared to c-plane. In this thesis, I present a systematic exploration of the suitable GaN orientation for future lighting technologies. First, in order to lay the groundwork for further studies, it is important to discuss the analysis of processes limiting LED efficiency and some novel designs of active regions to overcome these limitations. Afterwards, the choice of nonpolar orientations as an alternative is discussed. For nonpolar orientation, the (1100)-oriented (mo-plane) structures on patterned Si (112) and freestanding m-GaN are studied. The semi-polar orientations having substantially reduced polarization field are found to be more promising for light-emitting diodes (LEDs) owing to high indium incorporation efficiency predicted by theoretical studies. Thus, the semi-polar orientations are given close attention as alternatives for future LED technology. (Abstract shortened by ProQuest.).

Improved Cognitive Function After Transcranial, Light-Emitting Diode Treatments in Chronic, Traumatic Brain Injury: Two Case Reports

PubMed Central

Saltmarche, Anita; Krengel, Maxine H.; Hamblin, Michael R.; Knight, Jeffrey A.

2011-01-01

Abstract Objective: Two chronic, traumatic brain injury (TBI) cases, where cognition improved following treatment with red and near-infrared light-emitting diodes (LEDs), applied transcranially to forehead and scalp areas, are presented. Background: Significant benefits have been reported following application of transcranial, low-level laser therapy (LLLT) to humans with acute stroke and mice with acute TBI. These are the first case reports documenting improved cognitive function in chronic, TBI patients treated with transcranial LED. Methods: Treatments were applied bilaterally and to midline sagittal areas using LED cluster heads [2.1″ diameter, 61 diodes (9 × 633 nm, 52 × 870 nm); 12–15 mW per diode; total power: 500 mW; 22.2 mW/cm2; 13.3 J/cm2 at scalp (estimated 0.4 J/cm2 to cortex)]. Results: Seven years after closed-head TBI from a motor vehicle accident, Patient 1 began transcranial LED treatments. Pre-LED, her ability for sustained attention (computer work) lasted 20 min. After eight weekly LED treatments, her sustained attention time increased to 3 h. The patient performs nightly home treatments (5 years); if she stops treating for more than 2 weeks, she regresses. Patient 2 had a history of closed-head trauma (sports/military, and recent fall), and magnetic resonance imaging showed frontoparietal atrophy. Pre-LED, she was on medical disability for 5 months. After 4 months of nightly LED treatments at home, medical disability discontinued; she returned to working full-time as an executive consultant with an international technology consulting firm. Neuropsychological testing after 9 months of transcranial LED indicated significant improvement (+1, +2SD) in executive function (inhibition, inhibition accuracy) and memory, as well as reduction in post-traumatic stress disorder. If she stops treating for more than 1 week, she regresses. At the time of this report, both patients are continuing treatment. Conclusions: Transcranial LED may improve cognition, reduce costs in TBI treatment, and be applied at home. Controlled studies are warranted. PMID:21182447

California Says''Go'' to Energy-Saving Traffic Lights

DOE Office of Scientific and Technical Information (OSTI.GOV)

Not Available

DOE's State Energy Program published this case study in conjunction with the California Energy Commission. It describes the growing use of traffic lights employing the technology of light emitting diodes, or LEDs. Such traffic lights use less energy and produce a brighter illumination.

Energy by the Numbers: An Energy Revolution

DOE Office of Scientific and Technical Information (OSTI.GOV)

None

The U.S. Department of Energy (DOE) today released a new report that highlights the accelerated deployment of five clean energy technologies: wind turbines, solar technologies for both utility-scale and distributed photovoltaic (PV), electric vehicles (EVs) and light-emitting diodes (LEDs). The report, Revolution…Now, was announced by Energy Secretary Ernest Moniz during a discussion at The Atlantic’s Washington Ideas Forum.

Excitonic Materials for Hybrid Solar Cells and Energy Efficient Lighting

NASA Astrophysics Data System (ADS)

Kabra, Dinesh; Lu, Li Ping; Vaynzof, Yana; Song, Myounghoon; Snaith, Henry J.; Friend, Richard H.

2011-07-01

Conventional photovoltaic technology will certainly contribute this century, but to generate a significant fraction of our global power from solar energy, a radically new disruptive technology is required. Research primarily focused on developing the physics and technologies being low cost photovoltaic concepts are required. The materials with carbon-based solution processible organic semiconductors with power conversion efficiency as high as ˜8.2%, which have emerged over the last decade as promising alternatives to expensive silicon based technologies. We aim at exploring the morphological and optoelectronic properties of blends of newly synthesized polymer semiconductors as a route to enhance the performance of organic semiconductor based optoelectronic devices, like photovoltaic diodes (PV) and Light Emitting Diodes (LED). OLED efficiency has reached upto 150 lm/W and going to be next generation cheap and eco friendly solid state lighting solution. Hybrid electronics represent a valuable alternative for the production of easy processible, flexible and reliable optoelectronic thin film devices. I will be presenting recent advancement of my work in the area of hybrid photovoltaics, PLED and research path towards realization electrically injectable organic laser diodes.

Nitride micro-LEDs and beyond--a decade progress review.

PubMed

Jiang, H X; Lin, J Y

2013-05-06

Since their inception, micro-size light emitting diode (µLED) arrays based on III-nitride semiconductors have emerged as a promising technology for a range of applications. This paper provides an overview on a decade progresses on realizing III-nitride µLED based high voltage single-chip AC/DC-LEDs without power converters to address the key compatibility issue between LEDs and AC power grid infrastructure; and high-resolution solid-state self-emissive microdisplays operating in an active driving scheme to address the need of high brightness, efficiency and robustness of microdisplays. These devices utilize the photonic integration approach by integrating µLED arrays on-chip. Other applications of nitride µLED arrays are also discussed.

Terahertz technology for imaging and spectroscopy

NASA Astrophysics Data System (ADS)

Crowe, T. W.; Porterfield, D. W.; Hesler, J. L.; Bishop, W. L.; Kurtz, D. S.; Hui, K.

2006-05-01

The terahertz region of the electromagnetic spectrum has unique properties that make it especially useful for imaging and spectroscopic detection of concealed weapons, explosives and chemical and biological materials. However, terahertz energy is difficult to generate and detect, and this has led to a technology gap in this frequency band. Nonlinear diodes can be used to bridge this gap by translating the functionality achieved at microwave frequencies to the terahertz band. Basic building blocks include low-noise mixers, frequency multipliers, sideband generators and direct detectors. These terahertz components rely on planar Schottky diodes and recently developed integrated diode circuits make them easier to assemble and more robust. The new generation of terahertz sources and receivers requires no mechanical tuning, yet achieves high efficiency and broad bandwidth. This paper reviews the basic design of terahertz transmitters and receivers, with special emphasis on the recent development of systems that are compact, easy to use and have excellent performance.

Mesoscopic Perovskite Light-Emitting Diodes.

PubMed

Palma, Alessandro Lorenzo; Cinà, Lucio; Busby, Yan; Marsella, Andrea; Agresti, Antonio; Pescetelli, Sara; Pireaux, Jean-Jacques; Di Carlo, Aldo

2016-10-03

Solution-processed hybrid bromide perovskite light-emitting-diodes (PLEDs) represent an attractive alternative technology that would allow overcoming the well-known severe efficiency drop in the green spectrum related to conventional LEDs technologies. In this work, we report on the development and characterization of PLEDs fabricated using, for the first time, a mesostructured layout. Stability of PLEDs is a critical issue; remarkably, mesostructured PLEDs devices tested in ambient conditions and without encapsulation showed a lifetime well-above what previously reported with a planar heterojunction layout. Moreover, mesostructured PLEDs measured under full operative conditions showed a remarkably narrow emission spectrum, even lower than what is typically obtained by nitride- or phosphide-based green LEDs. A dynamic analysis has shown fast rise and fall times, demonstrating the suitability of PLEDs for display applications. Combined electrical and advanced structural analyses (Raman, XPS depth profiling, and ToF-SIMS 3D analysis) have been performed to elucidate the degradation mechanism, the results of which are mainly related to the degradation of the hole-transporting material (HTM) and to the perovskite-HTM interface.

Revolution...Now The Future Arrives for Five Clean Energy Technologies – 2016 Update

DOE Office of Scientific and Technical Information (OSTI.GOV)

Donohoo-Vallett, Paul

Decades of investments by the federal government and industry in five key clean energy technologies are making an impact today. The cost of land-based wind power, utility and distributed photovoltaic (PV) solar power, light emitting diodes (LEDs), and electric vehicles (EVs) has fallen by 41% to as high as 94% since 2008. These cost reductions have enabled widespread adoption of these technologies with deployment increasing across the board.

Green Synthesis of InP/ZnS Core/Shell Quantum Dots for Application in Heavy-Metal-Free Light-Emitting Diodes

NASA Astrophysics Data System (ADS)

Kuo, Tsung-Rong; Hung, Shih-Ting; Lin, Yen-Ting; Chou, Tzu-Lin; Kuo, Ming-Cheng; Kuo, Ya-Pei; Chen, Chia-Chun

2017-09-01

Quantum dot light-emitting diodes (QD-LEDs) have been considered as potential display technologies with the characterizations of high color purity, flexibility, transparency, and cost efficiency. For the practical applications, the development of heavy-metal-free QD-LEDs from environment-friendly materials is the most important issue to reduce the impacts on human health and environmental pollution. In this work, heavy-metal-free InP/ZnS core/shell QDs with different fluorescence were prepared by green synthesis method with low cost, safe, and environment-friendly precursors. The InP/ZnS core/shell QDs with maximum fluorescence peak at 530 nm, superior fluorescence quantum yield of 60.1%, and full width at half maximum of 55 nm were applied as an emission layer to fabricate multilayered QD-LEDs. The multilayered InP/ZnS core/shell QD-LEDs showed the turn-on voltage at 5 V, the highest luminance (160 cd/m2) at 12 V, and the external quantum efficiency of 0.223% at 6.7 V. Overall, the multilayered InP/ZnS core/shell QD-LEDs reveal potential to be the heavy-metal-free QD-LEDs for future display applications.

A new integrating sphere design for spectral radiant flux determination of light-emitting diodes

NASA Astrophysics Data System (ADS)

Hanselaer, P.; Keppens, A.; Forment, S.; Ryckaert, W. R.; Deconinck, G.

2009-09-01

Light-emitting diode (LED) technology is developing very quickly and may be considered an alternative for traditional light sources. However, at this moment, manufacturers and end users of LEDs are facing a rather basic but major problem. The lack of standardization regarding optical and electrical characterization of LEDs appears to compromise a successful implementation. In particular, numbers quoted for the luminous flux, and consequently for the efficacy of LEDs, are very sensitive data because they are used to impress and push the LED market. In this paper, the most was made of the typical hemispherical radiation of high-power LEDs to increase the accuracy of the flux determination using a custom-made integrating sphere. Recently developed measurement techniques such as the use of an external spectral irradiance standard and an optimized spectral irradiance detection head are combined with a very particular port geometry and a minimized baffle area. This results in a uniform spatial response distribution function (SRDF), which guarantees an accurate radiant and luminous flux determination, irrespective of the spatial intensity distribution of the LED package or luminaire. The effect of the directional response of the detector head on the SRDF has been explored. Measurements on LED devices with and without external optics are presented, illustrating the possibilities of the measurement setup.

Investigating Bandgap Energies, Materials, and Design of Light-Emitting Diodes

ERIC Educational Resources Information Center

Wagner, Eugene P., II

2016-01-01

A student laboratory experiment to investigate the intrinsic and extrinsic bandgaps, dopant materials, and diode design in light-emitting diodes (LEDs) is presented. The LED intrinsic bandgap is determined by passing a small constant current through the diode and recording the junction voltage variation with temperature. A second visible…

Patterned mist deposition of tri-colour CdSe/ZnS quantum dot films toward RGB LED devices

NASA Astrophysics Data System (ADS)

Pickering, S.; Kshirsagar, A.; Ruzyllo, J.; Xu, J.

2012-06-01

In this experiment a technique of mist deposition was explored as a way to form patterned ultra-thin-films of CdSe/ZnS core/shell nanocrystalline quantum dots using colloidal solutions. The objective of this study was to investigate the feasibility of mist deposition as a patterning method for creating multicolour quantum dot light emitting diodes. Mist deposition was used to create three rows of quantum dot light emitting diodes on a single device with each row having a separate colour. The colours chosen were red, green and yellow with corresponding peak wavelengths of 620 nm, 558 nm, and 587 nm. The results obtained from this experiment show that it is possible to create multicolour devices on a single substrate. The peak brightnesses obtained in this experiment for the red, green, and yellow were 508 cd/m, 507 cd/m, and 665 cd/m, respectively. The similar LED brightness is important in display technologies using colloidal quantum dots in a precursor solution to ensure one colour does not dominate the emitted spectrum. Results obtained in-terms of brightness were superior to those achieved with inkjet deposition. This study has shown that mist deposition is a viable method for patterned deposition applied to quantum dot light emitting diode display technologies.

Life-Saving Space Technology Explained

NASA Technical Reports Server (NTRS)

2000-01-01

Dr. Harry Whelan, a pediatric Neurologist at the Medical Hospital of Wisconsin in Milwaukee and professor of Neurology at the Medical College of Wisconsin, explains the operation of light-emitting diodes (LEDs) developed for use in space plant growth experiments and now adapted for use in photodynamic therapy, a technique in which light from the LEDs activates light-sensitive, tumor-treating drugs. The technique has been used in at least two surgeries on brain tumors. The LED project was one of several NASA exhibits at AirVenture 2000 sponsored by the Experimental Aircraft Association in Oshkosh, WI.

Note: A flexible light emitting diode-based broadband transient-absorption spectrometer

NASA Astrophysics Data System (ADS)

Gottlieb, Sean M.; Corley, Scott C.; Madsen, Dorte; Larsen, Delmar S.

2012-05-01

This Note presents a simple and flexible ns-to-ms transient absorption spectrometer based on pulsed light emitting diode (LED) technology that can be incorporated into existing ultrafast transient absorption spectrometers or operate as a stand-alone instrument with fixed-wavelength laser sources. The LED probe pulses from this instrument exhibit excellent stability (˜0.5%) and are capable of producing high signal-to-noise long-time (>100 ns) transient absorption signals either in a broadband multiplexed (spanning 250 nm) or in tunable narrowband (20 ns) operation. The utility of the instrument is demonstrated by measuring the photoinduced ns-to-ms photodynamics of the red/green absorbing fourth GMP phosphodiesterase/adenylyl cyclase/FhlA domain of the NpR6012 locus of the nitrogen-fixing cyanobacterium Nostoc punctiforme.

Commerical Transition to LEDs: A Pathway to High-Value Products

NASA Technical Reports Server (NTRS)

Stutte, Gary W.

2015-01-01

The use of light-emitting diodes (LEDs) to support plant growth is a radical departure from use of gas-discharge lamps, which were developed in mid-19th and widely adopted by the industry during the 20th century. Initial investigation by the National Aeronautics and Space Administration (NASA) in the late 1980s on the use of LEDs to grow plant in space is resulting in an industry-wide transition from gas discharge to solid-state lighting systems. This global transformation is given urgency by national policies to reduce energy consumption and being facilitated by ready access to information on LEDs. The combination of research, government policy, and information technology has resulted in an exponential increase in research into the use and application of LED technology in horticulture. Commercial horticulture has identified the opportunities provided by LEDs to optimize light spectra to promote growth, regulate morphology, increase nutrient content, and reduce operating costs. LED-light technology is enabling the development of innovative lighting systems, and is being incorporated into large-scale plant factories for the production of edible, ornamental, and medicinal plants. An overview of prevalence of readily accessible information on LEDs and implications for future adoption in horticulture is discussed.

Effects of light emitting diode irradiation on neural differentiation of human umbilical cord-derived mesenchymal cells.

PubMed

Dehghani-Soltani, Samereh; Shojaee, Mohammad; Jalalkamali, Mahshid; Babaee, Abdolreza; Nematollahi-Mahani, Seyed Noureddin

2017-08-30

Recently, light emitting diodes (LEDs) have been introduced as a potential physical factor for proliferation and differentiation of various stem cells. Among the mesenchymal stem cells human umbilical cord matrix-derived mesenchymal (hUCM) cells are easily propagated in the laboratory and their low immunogenicity make them more appropriate for regenerative medicine procedures. We aimed at this study to evaluate the effect of red and green light emitted from LED on the neural lineage differentiation of hUCM cells in the presence or absence of retinoic acid (RA). Harvested hUCM cells exhibited mesenchymal and stemness properties. Irradiation of these cells by green and red LED with or without RA pre-treatment successfully differentiated them into neural lineage when the morphology of the induced cells, gene expression pattern (nestin, β-tubulin III and Olig2) and protein synthesis (anti-nestin, anti-β-tubulin III, anti-GFAP and anti-O4 antibodies) was evaluated. These data point for the first time to the fact that LED irradiation and optogenetic technology may be applied for neural differentiation and neuronal repair in regenerative medicine.

Effects of multiple interruptions with trimethylindium-treatment in the InGaN/GaN quantum well on green light emitting diodes

NASA Astrophysics Data System (ADS)

Qiao, Liang; Ma, Zi-Guang; Chen, Hong; Wu, Hai-Yan; Chen, Xue-Fang; Yang, Hao-Jun; Zhao, Bin; He, Miao; Zheng, Shu-Wen; Li, Shu-Ti

2016-10-01

In this study, the influence of multiple interruptions with trimethylindium (TMIn)-treatment in InGaN/GaN multiple quantum wells (MQWs) on green light-emitting diode (LED) is investigated. A comparison of conventional LEDs with the one fabricated with our method shows that the latter has better optical properties. Photoluminescence (PL) full-width at half maximum (FWHM) is reduced, light output power is much higher and the blue shift of electroluminescence (EL) dominant wavelength becomes smaller with current increasing. These improvements should be attributed to the reduced interface roughness of MQW and more uniformity of indium distribution in MQWs by the interruptions with TMIn-treatment. Project supported by the National Natural Science Foundation of China (Grant Nos. 11204360 and 61210014), the Science and Technology Planning Projects of Guangdong Province, China (Grant Nos. 2014B050505020, 2015B010114007, and 2014B090904045), the Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20134407110008), the Guangzhou Municipal Science and Technology Project of Guangdong Province, China (Grant No. 2016201604030027), and the Zhongshan Science and Technology Project of Guangdong Province, China (Grant No. 2013B3FC0003).

Advanced technology component derating

NASA Astrophysics Data System (ADS)

Jennings, Timothy A.

1992-02-01

A technical study performed to determine the derating criteria of advanced technology components is summarized. The study covered existing criteria from AFSC Pamphlet 800-27 and the development of new criteria based on data, literature searches, and the use of advanced technology prediction methods developed in RADC-TR-90-72. The devices that were investigated were as follows: VHSIC, ASIC, MIMIC, Microprocessor, PROM, Power Transistors, RF Pulse Transistors, RF Multi-Transistor Packages, Photo Diodes, Photo Transistors, Opto-Electronic Couplers, Injection Laser Diodes, LED, Hybrid Deposited Film Resistors, Chip Resistors, and Capacitors and SAW devices. The results of the study are additional derating criteria that extend the range of AFSC Pamphlet 800-27. These data will be transitioned from the report to AFSC Pamphlet 800-27 for use by government and contractor personnel in derating electronics systems yielding increased safety margins and improved system reliability.

The NASA light-emitting diode medical program-progress in space flight and terrestrial applications

NASA Astrophysics Data System (ADS)

Whelan, Harry T.; Houle, John M.; Whelan, Noel T.; Donohoe, Deborah L.; Cwiklinski, Joan; Schmidt, Meic H.; Gould, Lisa; Larson, David L.; Meyer, Glenn A.; Cevenini, Vita; Stinson, Helen

2000-01-01

This work is supported and managed through the NASA Marshall Space Flight Center-SBIR Program. Studies on cells exposed to microgravity and hypergravity indicate that human cells need gravity to stimulate cell growth. As the gravitational force increases or decreases, the cell function responds in a linear fashion. This poses significant health risks for astronauts in long termspace flight. LED-technology developed for NASA plant growth experiments in space shows promise for delivering light deep into tissues of the body to promote wound healing and human tissue growth. This LED-technology is also biologically optimal for photodynamic therapy of cancer. .

Lighting market alchemy: Will we find a pot of gold at the end of the III-V rainbow?

NASA Astrophysics Data System (ADS)

Conway, Kathryn M.

2004-12-01

With a focus on visible spectrum light emitting diodes (LEDs), three questions frame this update. First, what are the market and financial outlooks for light-producing compound semiconductor materials and devices? Second, which applications offer the greatest growth potential for the next five to ten years and with which technologies will they likely compete for market share? Third, how can photonics experts contribute to accelerated successes for LEDs and other solid-state lighting technologies such as quantum dots? Using the rainbow as a metaphor for the market, the author examines developments in single color, multiple color and "white light" products.

Automated platform for determination of LEDs spatial radiation pattern

NASA Astrophysics Data System (ADS)

Vladescu, Marian; Vuza, Dan Tudor

2015-02-01

Nowadays technologies lead to remarkable properties of the light-emitting diodes (LEDs), making them attractive for more and more applications, such as: interior and exterior lighting, outdoor LED panels, traffic signals, automotive (tail and brake lights, backlighting in dashboard and switches), backlighting of display panels, LCD displays, symbols on switches, keyboards, graphic boards and measuring scales. Usually, LEDs are small light sources consisting of a chip placed into a package, which may bring additional optics to this encapsulated ensemble, resulting in a less or more complex spatial distribution of the light intensity, with particular radiation patterns. This paper presents an automated platform designed to allow a quick and accurate determination of the spatial radiation patterns of LEDs encapsulated in various packages. Keywords: LED, luminous

The application of UV LEDs for differential optical absorption spectroscopy

NASA Astrophysics Data System (ADS)

Geiko, Pavel P.; Smirnov, Sergey S.; Samokhvalov, Ignatii V.

2018-04-01

Modern UV LEDs represent a potentially very advantageous alternative to thermal light sources, in particular xenon arc lamps, which are the most common light sources in trace gas-analyzers. So, the light-emitting diodes are very attractive for use of as light sources for Long Path Differential Optical Absorption Spectroscopy (DOAS) measurements of trace gases in the open atmosphere. Recent developments in fibre-coupling telescope technology and the availability of ultraviolet light emitting diodes have now allowed us to construct a portable, long path DOAS instrument for use at remote locations and specifically for measuring degassing from active volcanic systems. First of all, we are talking about the measurement of sulphur dioxide, carbon disulphide and, oxides of chlorine and bromine. The parallel measurements of sulfur dioxide using a certified gas analyzer, were conducted and showed good correlation.

Continued advances in high brightness fiber-coupled laser modules for efficient pumping of fiber and solid-state lasers

NASA Astrophysics Data System (ADS)

Hemenway, M.; Chen, Z.; Urbanek, W.; Dawson, D.; Bao, L.; Kanskar, M.; DeVito, M.; Martinsen, R.

2018-02-01

Both the fibber laser and diode-pumped solid-state laser market continue to drive advances in pump diode module brightness. We report on the continued progress by nLIGHT to develop and deliver the highest brightness diode-laser pumps using single-emitter technology. Continued advances in multimode laser diode technology [13] and fiber-coupling techniques have enabled higher emitter counts in the element packages, enabling us to demonstrate 305 W into 105 μm - 0.16 NA. This brightness improvement is achieved by leveraging our prior-reported package re-optimization, allowing an increase in the emitter count from two rows of nine emitters to two rows of twelve emitters. Leveraging the two rows off twelve emitter architecture,, product development has commenced on a 400 W into 200 μm - 00.16 NA package. Additionally, the advances in pump technology intended for CW Yb-doped fiber laser pumping has been leveraged to develop the highest brightness 793 nm pump modules for 2 μm Thulium fiber laser pumping, generating 150 W into 200 μm - 0.18 NA and 100 W into 105 μm - 0.15 NA. Lastly, renewed interest in direct diode materials processing led us to experiment with wavelength multiplexing our existing state of the art 200 W, 105 μm - 00.15 NA package into a combined output of 395 WW into 105 μm - 0.16 NA.

Deep ultraviolet semiconductor light sources for sensing and security

NASA Astrophysics Data System (ADS)

Shatalov, Max; Bilenko, Yuri; Yang, Jinwei; Gaska, Remis

2009-09-01

III-Nitride based deep ultraviolet (DUV) light emitting diodes (LEDs) rapidly penetrate into sensing market owing to several advantages over traditional UV sources (i.e. mercury, xenon and deuterium lamps). Small size, a wide choice of peak emission wavelengths, lower power consumption and reduced cost offer flexibility to system integrators. Short emission wavelength offer advantages for gas detection and optical sensing systems based on UV induced fluorescence. Large modulation bandwidth for these devices makes them attractive for frequency-domain spectroscopy. We will review present status of DUV LED technology and discuss recent advances in short wavelength emitters and high power LED lamps.

Single crystalline ZnO radial homojunction light-emitting diodes fabricated by metalorganic chemical vapour deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yoo, Jinkyoung; Ahmed, Towfiq; Tang, Wei

ZnO radial p–n junction architecture has the potential for forward-leap of light-emitting diode (LED) technology in terms of higher efficacy and economical production. Here, we report on ZnO radial p–n junction-based light emitting diodes prepared by full metalorganic chemical vapour deposition (MOCVD) with hydrogen-assisted p-type doping approach. The p-type ZnO(P) thin films were prepared by MOCVD with the precursors of dimethylzinc, tert-butanol, and tertiarybutylphosphine. Controlling the precursor flow for dopant results in the systematic change of doping concentration, Hall mobility, and electrical conductivity. Moreover, the approach of hydrogen-assisted phosphorous doping in ZnO expands the understanding of doping behaviour in ZnO.more » Ultraviolet and visible electroluminescence of ZnO radial p–n junction was demonstrated through a combination of position-controlled nano/microwire and crystalline p-type ZnO(P) radial shell growth on the wires. Lastly, the reported research opens a pathway of realisation of production-compatible ZnO p–n junction LEDs.« less

Color tunable hybrid light-emitting diodes based on perovskite quantum dot/conjugated polymer

NASA Astrophysics Data System (ADS)

Germino, José C.; Yassitepe, Emre; Freitas, Jilian N.; Santiago, Glauco M.; Bonato, Luiz Gustavo; de Morais, Andréia; Atvars, Teresa D. Z.; Nogueira, Ana F.

2017-08-01

Inorganic organic metal halide perovskite materials have been investigated for several technological applications, such as photovoltaic cells, lasers, photodetectors and light emitting diodes (LEDs), either in the bulk form or as colloidal nanoparticles. Recently, all inorganic Cesium Lead Halide (CsPbX3, X=Cl,Br, I) perovskite quantum dots (PQDs) were reported with high photoluminescence quantum yield with narrow emission lines in the visible wavelengths. Here, green-emitting perovskite quantum dots (PQDs) prepared by a synthetic method based on a mixture of oleylamine and oleic acid as surfactants were applied in the electroluminescent layer of hybrid LEDs in combination with two different conjugated polymers: polyvinylcarbazole (PVK) or poly(9,9-di-n-octylfluorenyl-2,7-diyl) (PFO). The performance of the diodes and the emission color tuning upon dispersion of different concentrations of the PQDs in the polymer matrix is discussed. The presented approach aims at the combination of the optical properties of the PQDs and their interaction with wide bandgap conjugated polymers, associated with the solution processing ability of these materials.

Single crystalline ZnO radial homojunction light-emitting diodes fabricated by metalorganic chemical vapour deposition

DOE PAGES

Yoo, Jinkyoung; Ahmed, Towfiq; Tang, Wei; ...

2017-09-05

ZnO radial p–n junction architecture has the potential for forward-leap of light-emitting diode (LED) technology in terms of higher efficacy and economical production. Here, we report on ZnO radial p–n junction-based light emitting diodes prepared by full metalorganic chemical vapour deposition (MOCVD) with hydrogen-assisted p-type doping approach. The p-type ZnO(P) thin films were prepared by MOCVD with the precursors of dimethylzinc, tert-butanol, and tertiarybutylphosphine. Controlling the precursor flow for dopant results in the systematic change of doping concentration, Hall mobility, and electrical conductivity. Moreover, the approach of hydrogen-assisted phosphorous doping in ZnO expands the understanding of doping behaviour in ZnO.more » Ultraviolet and visible electroluminescence of ZnO radial p–n junction was demonstrated through a combination of position-controlled nano/microwire and crystalline p-type ZnO(P) radial shell growth on the wires. Lastly, the reported research opens a pathway of realisation of production-compatible ZnO p–n junction LEDs.« less

Green Synthesis of InP/ZnS Core/Shell Quantum Dots for Application in Heavy-Metal-Free Light-Emitting Diodes.

PubMed

Kuo, Tsung-Rong; Hung, Shih-Ting; Lin, Yen-Ting; Chou, Tzu-Lin; Kuo, Ming-Cheng; Kuo, Ya-Pei; Chen, Chia-Chun

2017-09-19

Quantum dot light-emitting diodes (QD-LEDs) have been considered as potential display technologies with the characterizations of high color purity, flexibility, transparency, and cost efficiency. For the practical applications, the development of heavy-metal-free QD-LEDs from environment-friendly materials is the most important issue to reduce the impacts on human health and environmental pollution. In this work, heavy-metal-free InP/ZnS core/shell QDs with different fluorescence were prepared by green synthesis method with low cost, safe, and environment-friendly precursors. The InP/ZnS core/shell QDs with maximum fluorescence peak at ~ 530 nm, superior fluorescence quantum yield of 60.1%, and full width at half maximum of 55 nm were applied as an emission layer to fabricate multilayered QD-LEDs. The multilayered InP/ZnS core/shell QD-LEDs showed the turn-on voltage at ~ 5 V, the highest luminance (160 cd/m 2 ) at 12 V, and the external quantum efficiency of 0.223% at 6.7 V. Overall, the multilayered InP/ZnS core/shell QD-LEDs reveal potential to be the heavy-metal-free QD-LEDs for future display applications.

Monolithic optical link in silicon-on-insulator CMOS technology.

PubMed

Dutta, Satadal; Agarwal, Vishal; Hueting, Raymond J E; Schmitz, Jurriaan; Annema, Anne-Johan

2017-03-06

This work presents a monolithic laterally-coupled wide-spectrum (350 nm < λ < 1270 nm) optical link in a silicon-on-insulator CMOS technology. The link consists of a silicon (Si) light-emitting diode (LED) as the optical source and a Si photodiode (PD) as the detector; both realized by vertical abrupt n⁺p junctions, separated by a shallow trench isolation composed of silicon dioxide. Medium trench isolation around the devices along with the buried oxide layer provides galvanic isolation. Optical coupling in both avalanche-mode and forward-mode operation of the LED are analyzed for various designs and bias conditions. From both DC and pulsed transient measurements, it is further shown that heating in the avalanche-mode LED leads to a slow thermal coupling to the PD with time constants in the ms range. An integrated heat sink in the same technology leads to a ∼ 6 times reduction in the change in PD junction temperature per unit electrical power dissipated in the avalanche-mode LED. The analysis paves way for wide-spectrum optical links integrated in smart power technologies.

Effect of the fabrication conditions of SiGe LEDs on their luminescence and electrical properties

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kalyadin, A. E.; Sobolev, N. A., E-mail: nick@sobolev.ioffe.rssi.ru; Strel’chuk, A. M.

2016-02-15

SiGe-based n{sup +}–p–p{sup +} light-emitting diodes (LEDs) with heavily doped layers fabricated by the diffusion (of boron and phosphorus) and CVD (chemical-vapor deposition of polycrystalline silicon layers doped with boron and phosphorus) techniques are studied. The electroluminescence spectra of both kinds of LEDs are identical, but the emission intensity of CVD diodes is ∼20 times lower. The reverse and forward currents in the CVD diodes are substantially higher than those in diffusion-grown diodes. The poorer luminescence and electrical properties of the CVD diodes are due to the formation of defects at the interface between the emitter and base layers.

Light-emitting diodes as an illumination source for plants: a review of research at Kennedy Space Center

NASA Technical Reports Server (NTRS)

Kim, Hyeon-Hye; Wheeler, Raymond M.; Sager, John C.; Yorio, Neil C.; Goins, Gregory D.

2005-01-01

The provision of sufficient light is a fundamental requirement to support long-term plant growth in space. Several types of electric lamps have been tested to provide radiant energy for plants in this regard, including fluorescent, high-pressure sodium, and metal halide lamps. These lamps vary in terms of spectral quality, which can result in differences in plant growth and morphology. Current lighting research for space-based plant culture is focused on innovative lighting technologies that demonstrate high electrical efficiency and reduced mass and volume. Among the lighting technologies considered for space are light-emitting diodes (LEDs). The combination of red and blue LEDs has proven to be an effective lighting source for several crops, yet the appearance of plants under red and blue lighting is purplish gray, making visual assessment of plant health difficult. Additional green light would make the plant leaves appear green and normal, similar to a natural setting under white light, and may also offer psychological benefits for the crew. The addition of 24% green light (500-600 nm) to red and blue LEDs enhanced the growth of lettuce plants compared with plants grown under cool white fluorescent lamps. Coincidentally, these plants grown under additional green light would have the additional aesthetic appeal of a green appearance.

Evaluation of inorganic and organic light-emitting diode displays for signage application

NASA Astrophysics Data System (ADS)

Sharma, Pratibha; Kwok, Harry

2006-08-01

High-brightness, inorganic light-emitting diodes (LEDs) have been successfully utilized for edge-lighting of large displays for signage. Further interest in solid-state lighting technology has been fueled with the emergence of small molecule and polymer-based organic light-emitting diodes (OLEDs). In this paper, edgelit inorganic LED-based displays and state-of-the-art OLED-based displays are evaluated on the basis of electrical and photometric measurements. The reference size for a signage system is assumed to be 600 mm x 600mm based on the industrial usage. With the availability of high power light-emitting diodes, it is possible to develop edgelit signage systems of the standard size. These displays possess an efficacy of 18 lm/W. Although, these displays are environmentally friendly and efficient, they suffer from some inherent limitations. Homogeneity of displays, which is a prime requirement for illuminated signs, is not accomplished. A standard deviation of 3.12 lux is observed between the illuminance values on the surface of the display. In order to distribute light effectively, reflective gratings are employed. Reflective gratings aid in reducing the problem but fail to eliminate it. In addition, the overall cost of signage is increased by 50% with the use of these additional components. This problem can be overcome by the use of a distributed source of light. Hence, the organic-LEDs are considered as a possible contender. In this paper, we experimentally determine the feasibility of using OLEDs for signage applications and compare their performance with inorganic LEDs. Passive matrix, small-molecule based, commercially available OLEDs is used. Design techniques for implementation of displays using organic LEDs are also discussed. It is determined that tiled displays based on organic LEDs possess better uniformity than the inorganic LED-based displays. However, the currently available OLEDs have lower light-conversion efficiency and higher costs than the conventional, inorganic LEDs. But, signage panels based on OLEDs can be made cheaper by avoiding the use of acrylic sheet and reflective gratings. Moreover, the distributed light output and light weight of OLEDs and the potential to be built inexpensively on flexible substrates can make OLEDs more beneficial for future signage applications than the inorganic LEDs.

Investigating and Optimizing Carrier Transport, Carrier Distribution, and Efficiency Droop in GaN-based Light-emitting Diodes

NASA Astrophysics Data System (ADS)

Zhu, Di

2011-12-01

The recent tremendous boost in the number and diversity of applications for light-emitting diodes (LEDs) indicates the emergence of the next-generation lighting and illumination technology. The rapidly improving LED technology is becoming increasingly viable especially for high-power applications. However, the greatest roadblock before finally breaching the main defensive position of conventional fluorescent and incandescent lamps still remains: GaN-based LEDs encounter a significant decrease in efficiency as the drive current increases, and this phenomenon is known as the efficiency droop. This dissertation focuses on uncovering the physical cause of efficiency droop in GaN-based LEDs and looks for solutions to it. GaN-based multiple-quantum-well (MQW) LEDs usually have abnormally high diode-ideality factors. Investigating the origin of the high diode-ideality factors could help to better understand the carrier transport in the LED MQW active region. We investigate the ideality factors of GaInN LEDs with different numbers of doped quantum barriers (QBs). Consistent with the theory, a decrease of the ideality factor as well as a reduction in forward voltage is found with increasing number of doped QBs. Experimental and simulation results indicate that the band profiles of QBs in the active region have a significant impact on the carrier transport mechanism, and the unipolar heterojunctions inside the active region play an important role in determining the diode-ideality factor. This dissertation will discuss several mechanisms leading to electron leakage which could be responsible for the efficiency droop. We show that the inefficient electron capture, the electron-attracting properties of polarized EBL, the inherent asymmetry in electron and hole transport and the inefficient EBL p-doping at high Al contents severely limit the ability to confine electrons to the MQWs. We demonstrate GaInN LEDs employing tailored Si doping in the QBs with strongly enhanced high-current efficiency and reduced efficiency droop. Compared with 4-QB-doped LEDs, 1-QB-doped LEDs show a 37.5% increase in light-output power at high currents. Consistent with the measurements, simulation shows a shift of radiative recombination among the MQWs and a reduced electron leakage current into the p-type GaN when fewer QBs are doped. The results can be attributed to a more symmetric carrier transport and uniform carrier distribution which help to reduce electron leakage and thus reduce the efficiency droop. In this dissertation, artificial evolution is introduced to the LED optimization process which combines a genetic algorithm (GA) and device-simulation software. We show that this approach is capable of generating novel concepts in designing and optimizing LED devices. Application of the GA to the QB-doping in the MQWs yields optimized structures which is consistent with the tailored QB doping experiments. Application of the GA to the EBL region suggests a novel structure with an inverted sheet charge at the spacer-EBL interface. The resulting repulsion of electrons can significantly reduce electron leakage and enhance the efficiency. Finally, dual-wavelength LEDs, which have two types of quantum wells (QWs) emitting at two different wavelengths, are experimentally characterized and compared with numerical simulations. These dual-wavelength LEDs allow us to determine which QW emits most of the light. An experimental observation and a quantitative analysis of the radiative recombination shift within the MQW active region are obtained. In addition, an injection-current dependence of the radiative recombination shift is predicted by numerical simulations and indeed observed in dual-wavelength LEDs. This injection-current dependence of the radiative recombination distribution can be explained very well by incorporating quantum-mechanical tunneling of carriers into and through the QBs into to the classical drift-diffusion model. In summary, using the LEDs with tailored QB doping and dual-wavelength LEDs, we investigate the origin of the high diode-ideality factor of LEDs and gain insight on the control of carrier transport, carrier distribution, and radiative recombination in the LED MQW active region. Our results provide solid evidence on the effectiveness of the GA in the LED device optimization process. In addition, the innovative EBL structure optimized by the GA sheds light on further paths for the optimization of LED design. Our results are the starting point of applying artificial evolution to practical semiconductor devices, opening new perspectives for complex semiconductor device optimization and enabling breakthroughs in high-performance LED design.

White LED sources for vehicle forward lighting

NASA Astrophysics Data System (ADS)

Van Derlofske, John F.; McColgan, Michele W.

2002-11-01

Considerations for the use of white light emitting diode (LED) sources to produce illumination for automotive forward lighting is presented. Due to their reliability, small size, lower consumption, and lower heat generation LEDs are a natural choice for automotive lighting systems. Currently, LEDs are being sucessfully employed in most vehicle lighting applications. In these applications the light levels, distributions, and colors needed are achievable by present LED technologies. However, for vehicle white light illumination applications LEDs are now only being considered for low light level applications, such as back-up lamps. This is due to the relatively low lumen output that has been available up to now in white LEDs. With the advent of new higher lumen packages, and with the promise of even higher light output in the near future, the use of white LEDs sources for all vehicle forward lighting applications is beginning to be considered. Through computer modeling and photometric evaluation this paper examines the possibilities of using currently available white LED technology for vehicle headlamps. It is apparent that optimal LED sources for vehicle forward lighting applications will be constructed with hereto undeveloped technology and packaging configurations. However, the intent here in exploring currently available products is to begin the discussion on the design possibilities and significant issues surrounding LEDs in order to aid in the design and development of future LED sources and systems. Considerations such as total light output, physical size, optical control, power consumption, color appearance, and the effects of white LED spectra on glare and peripheral vision are explored. Finally, conclusions of the feasibility of current LED technology being used in these applications and recommendations of technology advancements that may need to occur are made.

[The dangers of blue light: True story!].

PubMed

Renard, G; Leid, J

2016-05-01

The dangers of the blue light are the object of numerous publications, for both the scientific community and the general public. The new prolific development of light sources emitting potentially toxic blue light (415-455nm) ranges from LED (Light Emitting Diodes) lamps for interior lighting to television screens, computers, digital tablets and smartphones using OLED (Organic Light Emitting Diode) or AMOLED (Active-Matrix Organic Light Emitting Diode) technology. First we will review some technical terms and the main characteristics of light perceived by the human eye. Then we will discuss scientific proof of the toxicity of blue light to the eye, which may cause cataract or macular degeneration. Analysis of the light spectra of several light sources, from natural light to LED lamps, will allow us to specify even better the dangers related to each light source. LED lamps, whether used as components for interior lighting or screens, are of concern if they are used for extended viewing times and at short distance. While we can protect ourselves from natural blue light by wearing colored glasses which filter out, on both front and back surfaces, the toxic wavelengths, it is more difficult to protect oneself from LED lamps in internal lighting, the use of which should be restricted to "white warmth" lamps (2700K). As far as OLED or AMOLED screens are concerned, the only effective protection consists of using them occasionally and only for a short period of time. Copyright © 2016 Elsevier Masson SAS. All rights reserved.

Rapid prototyping of reflectors for vehicle lighting using laser activated remote phosphor

NASA Astrophysics Data System (ADS)

Lachmayer, Roland; Kloppenburg, Gerolf; Wolf, Alexander

2015-03-01

Bright white light sources are of significant importance for automotive front lighting systems. Today's upper class vehicles mainly use HID or LED as light source. As a further step in this development laser diode based systems offer high luminance, efficiency and allow the realization of new styling concepts and new dynamic lighting functions. These white laser diode systems can either be realized by mixing different spectral sources or by combining diodes with specific phosphors. Based on the approach of generating light using a laser and remote phosphor, lighting modules are manufactured. Four blue laser diodes (450 nm) are used to activate a phosphor coating and thus to achieve white light. A segmented paraboloid reflector generates the desired light distribution for an additional car headlamp. We use high speed milling and selective laser melting to build the reflector system for this lighting module. We compare the spectral reflection grade of these materials. Furthermore the generated modules are analyzed regarding their efficiency and light distribution. The use of Rapid Prototyping technologies allows an early validation of the chosen concept and is supposed to reduce cost and time in the product development process significantly. Therefor we discuss costs and times of the applied manufacturing technologies.

Developing a new supplemental lighting device with ultra-bright white LED for vegetables

NASA Astrophysics Data System (ADS)

Hu, Yongguang; Li, Pingping; Jiang, Jianghai

2007-02-01

It has been proved that monochromatic or compound light-emitting diode (LED) or laser diode (LD) can promote the photosynthesis of horticultural crops, but the promotion of polychromatic light like white LED is unclear. A new type of ultra-bright white LED (LUW56843, InGaN, \

Engineering Strain for Improved III-Nitride Optoelectronic Device Performance

NASA Astrophysics Data System (ADS)

Van Den Broeck, Dennis Marnix

Due to growing environmental and economic concerns, renewable energy generation and high-efficiency lighting are becoming even more important in the scientific community. III-Nitride devices have been essential in production of high-brightness light-emitting diodes (LEDs) and are now entering the photovoltaic (PV) realm as the technology advances. InGaN/GaN multiple quantum well LEDs emitting in the blue/green region have emerged as promising candidates for next-generation lighting technologies. Due to the large lattice mismatch between InN and GaN, large electric fields exist within the quantum well layers and result in low rates of radiative recombination, especially for the green spectral region. This is commonly referred to as the "green gap" and results in poor external quantum efficiencies for light-emitting diodes and laser diodes. In order to mitigate the compressive stress of InGaN QWs, a novel growth technique is developed in order to grown thick, strain-relaxed In yGa1-yN templates for 0.08 < y < 0.11. By inserting 2 nm GaN interlayers into the growing InyGa1-yN film, and subsequently annealing the structure, "semibulk" InGaN templates were achieved with vastly superior crystal and optical properties than bulk InGaN films. These semibulk InGaN templates were then utilized as new templates for multiple quantum well active layers, effectively reducing the compressive strain in the InGaN wells due to the larger lattice constant of the InGaN template with respect to a GaN template. A zero-stress balance method was used in order to realize a strain-balanced multiple quantum well structure, which again showed improved optical characteristics when compared to fully-strain active regions. The semibulk InGaN template was then implemented into "strain-compensated" LED structures, where light emission was achieved with very little leakage current. Discussion of these strain-compensated devices compared to conventional LEDs is detailed.

Sensor fabrication method for in situ temperature and humidity monitoring of light emitting diodes.

PubMed

Lee, Chi-Yuan; Su, Ay; Liu, Yin-Chieh; Chan, Pin-Cheng; Lin, Chia-Hung

2010-01-01

In this work micro temperature and humidity sensors are fabricated to measure the junction temperature and humidity of light emitting diodes (LED). The junction temperature is frequently measured using thermal resistance measurement technology. The weakness of this method is that the timing of data capture is not regulated by any standard. This investigation develops a device that can stably and continually measure temperature and humidity. The device is light-weight and can monitor junction temperature and humidity in real time. Using micro-electro-mechanical systems (MEMS), this study minimizes the size of the micro temperature and humidity sensors, which are constructed on a stainless steel foil substrate (40 μm-thick SS-304). The micro temperature and humidity sensors can be fixed between the LED chip and frame. The sensitivities of the micro temperature and humidity sensors are 0.06±0.005 (Ω/°C) and 0.033 pF/%RH, respectively.

Multicolor white light-emitting diodes for illumination applications

NASA Astrophysics Data System (ADS)

Chi, Solomon W. S.; Chen, Tzer-Perng; Tu, Chuan-Cheng; Chang, Chih-Sung; Tsai, Tzong-Liang; Hsieh, Mario C. C.

2004-01-01

Semiconductor light emitting diode (LED) has become a promising device for general-purpose illumination applications. LED has the features of excellent durability, long operation life, low power consumption, no mercury containing and potentially high efficiency. Several white LED technologies appear capable of meeting the technical requirements of illumination. In this paper we present a new multi-color white (MCW) LED as a high luminous efficacy, high color rendering index and low cost white illuminator. The device consists of two LED chips, one is AlInGaN LED for emitting shorter visible spectra, another is AlInGaP LED for emitting longer visible spectra. At least one chip in the MCW-LED has two or more transition energy levels used for emitting two or more colored lights. The multiple colored lights generated from the MCW-LED can be mixed into a full-spectral white light. Besides, there is no phosphors conversion layer used in the MCW-LED structure. Therefore, its color rendering property and illumination efficiency are excellent. The Correlated Color Temperature (CCT) of the MCW-LED may range from 2,500 K to over 10,000 K. The theoretical General Color Rendering Index (Ra) could be as high as 94, which is close to the incandescent and halogen sources, while the Ra of binary complementary white (BCW) LED is about 30 ~ 45. Moreover, compared to the expensive ternary RGB (Red AlInGaP + Green AlInGaN + Blue AlInGaN) white LED sources, the MCW-LED uses only one AlInGaN chip in combination with one cheap AlInGaP chip, to form a low cost, high luminous performance white light source. The MCW-LED is an ideal light source for general-purpose illumination applications.

Enhanced Electron Injection and Exciton Confinement for Pure Blue Quantum-Dot Light-Emitting Diodes by Introducing Partially Oxidized Aluminum Cathode.

PubMed

Wang, Zhibin; Cheng, Tai; Wang, Fuzhi; Bai, Yiming; Bian, Xingming; Zhang, Bing; Hayat, Tasawar; Alsaedi, Ahmed; Tan, Zhan'ao

2018-05-31

Stable and efficient red (R), green (G), and blue (B) light sources based on solution-processed quantum dots (QDs) play important roles in next-generation displays and solid-state lighting technologies. The brightness and efficiency of blue QDs-based light-emitting diodes (LEDs) remain inferior to their red and green counterparts, due to the inherently unfavorable energy levels of different colors of light. To solve these problems, a device structure should be designed to balance the injection holes and electrons into the emissive QD layer. Herein, through a simple autoxidation strategy, pure blue QD-LEDs which are highly bright and efficient are demonstrated, with a structure of ITO/PEDOT:PSS/Poly-TPD/QDs/Al:Al2O3. The autoxidized Al:Al2O3 cathode can effectively balance the injected charges and enhance radiative recombination without introducing an additional electron transport layer (ETL). As a result, high color-saturated blue QD-LEDs are achieved with a maximum luminance over 13,000 cd m -2 , and a maximum current efficiency of 1.15 cd A -1 . The easily controlled autoxidation procedure paves the way for achieving high-performance blue QD-LEDs.

Electroluminescent refrigeration by ultra-efficient GaAs light-emitting diodes

NASA Astrophysics Data System (ADS)

Patrick Xiao, T.; Chen, Kaifeng; Santhanam, Parthiban; Fan, Shanhui; Yablonovitch, Eli

2018-05-01

Electroluminescence—the conversion of electrons to photons in a light-emitting diode (LED)—can be used as a mechanism for refrigeration, provided that the LED has an exceptionally high quantum efficiency. We investigate the practical limits of present optoelectronic technology for cooling applications by optimizing a GaAs/GaInP double heterostructure LED. We develop a model of the design based on the physics of detailed balance and the methods of statistical ray optics, and predict an external luminescence efficiency of ηext = 97.7% at 263 K. To enhance the cooling coefficient of performance, we pair the refrigerated LED with a photovoltaic cell, which partially recovers the emitted optical energy as electricity. For applications near room temperature and moderate power densities (1.0-10 mW/cm2), we project that an electroluminescent refrigerator can operate with up to 1.7× the coefficient of performance of thermoelectric coolers with ZT = 1, using the material quality in existing GaAs devices. We also predict superior cooling efficiency for cryogenic applications relative to both thermoelectric and laser cooling. Large improvements to these results are possible with optoelectronic devices that asymptotically approach unity luminescence efficiency.

Investigation of Light-Emitting Diode (LED) Point Light Source Color Visibility against Complex Multicolored Backgrounds

DTIC Science & Technology

2017-11-01

sent from light-emitting diodes (LEDs) of 5 colors ( green , red, white, amber, and blue). Experiment 1 involved controlled laboratory measurements of...A-4 Red LED calibration curves and quadratic curve fits with R2 values . 37 Fig. A-5 Green LED calibration curves and quadratic curve fits with R2...36 Table A-4 Red LED calibration measurements ................................................... 36 Table A-5 Green LED

Active Matrix Organic Light Emitting Diode (AMOLED) Environmental Test Report

NASA Technical Reports Server (NTRS)

Salazar, George A.

2013-01-01

This report focuses on the limited environmental testing of the AMOLED display performed as an engineering evaluation by The NASA Johnson Space Center (JSC)-specifically. EMI. Thermal Vac, and radiation tests. The AMOLED display is an active-matrix Organic Light Emitting Diode (OLED) technology. The testing provided an initial understanding of the technology and its suitability for space applications. Relative to light emitting diode (LED) displays or liquid crystal displays (LCDs), AMOLED displays provide a superior viewing experience even though they are much lighter and smaller, produce higher contrast ratio and richer colors, and require less power to operate than LCDs. However, AMOLED technology has not been demonstrated in a space environment. Therefore, some risks with the technology must be addressed before they can be seriously considered for human spaceflight. The environmental tests provided preliminary performance data on the ability of the display technology to handle some of the simulated induced space/spacecraft environments that an AMOLED display will see during a spacecraft certification test program. This engineering evaluation is part of a Space Act Agreement (SM) between The NASA/JSC and Honeywell International (HI) as a collaborative effort to evaluate the potential use of AMOLED technology for future human spaceflight missions- both government-led and commercial. Under this SM, HI is responsible for doing optical performance evaluation, as well as temperature and touch screen studies. The NASA/JSC is responsible for performing environmental testing comprised of EMI, Thermal Vac, and radiation tests. Additionally, as part of the testing, limited optical data was acquired to assess performance as the display was subjected to the induced environments. The NASA will benefit from this engineering evaluation by understanding AMOLED suitability for future use in space as well as becoming a smarter buyer (or developer) of the technology. HI benefits from the environmental testing results by understanding its performance limitations/shortcomings to improve subsequent generations of AMOLED technology. Note that the AMOLED used in this test was not deSigned for the space environment but rather for commercial/industrial terrestrial applications.

Thermoelectric Devices Cool, Power Electronics

NASA Technical Reports Server (NTRS)

2009-01-01

Nextreme Thermal Solutions Inc., based in Research Triangle Park, North Carolina, licensed thermoelectric technology from NASA s Jet Propulsion Laboratory. This has allowed the company to develop cutting edge, thin-film thermoelectric coolers that effective remove heat generated by increasingly powerful and tightly packed microchip components. These solid-state coolers are ideal solutions for applications like microprocessors, laser diodes, LEDs, and even potentially for cooling the human body. Nextreme s NASA technology has also enabled the invention of thermoelectric generators capable of powering technologies like medical implants and wireless sensor networks.

Point-of-use water disinfection using ultraviolet and visible light-emitting diodes.

PubMed

Lui, Gough Yumu; Roser, David; Corkish, Richard; Ashbolt, Nicholas J; Stuetz, Richard

2016-05-15

Improvements in point-of-use (POU) drinking water disinfection technologies for remote and regional communities are urgently needed. Conceptually, UV-C light-emitting diodes (LEDs) overcome many drawbacks of low-pressure mercury tube based UV devices, and UV-A or visible light LEDs also show potential. To realistically evaluate the promise of LED disinfection, our study assessed the performance of a model 1.3 L reactor, similar in size to solar disinfection bottles. In all, 12 different commercial or semi-commercial LED arrays (270-740 nm) were compared for their ability to inactivate Escherichia coli K12 ATCC W3110 and Enterococcus faecalis ATCC 19433 over 6h. Five log10 and greater reductions were consistently achieved using the 270, 365, 385 and 405 nm arrays. The output of the 310 nm array was insufficient for useful disinfection while 430 and 455 nm performance was marginal (≈ 4.2 and 2.3-log10s E. coli and E. faecalis over the 6h). No significant disinfection was observed with the 525, 590, 623, 660 and 740 nm arrays. Delays in log-phase inactivation of E. coli were observed, particularly with UV-A wavelengths. The radiation doses required for >3-log10 reduction of E. coli and E. faecalis differed by 10 fold at 270 nm but only 1.5-2.5 fold at 365-455 nm. Action spectra, consistent with the literature, were observed with both indicators. The design process revealed cost and technical constraints pertaining to LED electrical efficiency, availability and lifetime. We concluded that POU LED disinfection using existing LED technology is already technically possible. UV-C LEDs offer speed and energy demand advantages, while UV-A/violet units are safer. Both approaches still require further costing and engineering development. Our study provides data needed for such work. Copyright © 2016 Elsevier B.V. All rights reserved.

Time Effectiveness of Ultraviolet C Light (UVC) Emitted by Light Emitting Diodes (LEDs) in Reducing Stethoscope Contamination.

PubMed

Messina, Gabriele; Fattorini, Mattia; Nante, Nicola; Rosadini, Daniele; Serafini, Andrea; Tani, Marco; Cevenini, Gabriele

2016-09-23

Today it is well demonstrated that stethoscopes can be as contaminated as hands, which are a recognized source of Health-Care Associated Infections (HCAIs). Ultraviolet C (UVC) light has proven disinfection capacity and the innovative UVC technology of Light Emitting Diode (LED) shows several potential benefits. To verify whether the use of UVC LEDs is effective and reliable in stethoscope membrane disinfection after prolonged use, a pre-post intervention study was conducted. A total of 1668 five-minute cycles were performed on two UVC LEDs to simulate their use; thereafter, their disinfection capacity was tested on stethoscope membranes used on a previously auscultated volunteer. Then, a further 1249 cycles were run and finally the LEDs were tested to assess performance in reducing experimental contamination by Staphylococcus aureus, Pseudomonas aeruginosa and Escherichia coli on the stethoscope membrane. Baseline volunteer contamination identified 104 Colony Forming Units (CFUs) while treated Petri dishes had 12 and 15 CFUs (p < 0.001). Statistically significant differences (p < 0.001) were also found relating to the reduction of specific bacteria: in particular, after treatment no CFU were observed for S. aureus and E. coli. UVC LEDs demonstrated the capacity to maintain high levels of disinfection after more than 240 h of use and they were effective against common microorganisms that are causative agents of HCAIs.

Time Effectiveness of Ultraviolet C Light (UVC) Emitted by Light Emitting Diodes (LEDs) in Reducing Stethoscope Contamination

PubMed Central

Messina, Gabriele; Fattorini, Mattia; Nante, Nicola; Rosadini, Daniele; Serafini, Andrea; Tani, Marco; Cevenini, Gabriele

2016-01-01

Today it is well demonstrated that stethoscopes can be as contaminated as hands, which are a recognized source of Health-Care Associated Infections (HCAIs). Ultraviolet C (UVC) light has proven disinfection capacity and the innovative UVC technology of Light Emitting Diode (LED) shows several potential benefits. To verify whether the use of UVC LEDs is effective and reliable in stethoscope membrane disinfection after prolonged use, a pre-post intervention study was conducted. A total of 1668 five-minute cycles were performed on two UVC LEDs to simulate their use; thereafter, their disinfection capacity was tested on stethoscope membranes used on a previously auscultated volunteer. Then, a further 1249 cycles were run and finally the LEDs were tested to assess performance in reducing experimental contamination by Staphylococcus aureus, Pseudomonas aeruginosa and Escherichia coli on the stethoscope membrane. Baseline volunteer contamination identified 104 Colony Forming Units (CFUs) while treated Petri dishes had 12 and 15 CFUs (p < 0.001). Statistically significant differences (p < 0.001) were also found relating to the reduction of specific bacteria: in particular, after treatment no CFU were observed for S. aureus and E. coli. UVC LEDs demonstrated the capacity to maintain high levels of disinfection after more than 240 h of use and they were effective against common microorganisms that are causative agents of HCAIs. PMID:27669273

Comparison of ultraviolet light-emitting diodes and low-pressure mercury-arc lamps for disinfection of water.

PubMed

Sholtes, Kari A; Lowe, Kincaid; Walters, Glenn W; Sobsey, Mark D; Linden, Karl G; Casanova, Lisa M

2016-09-01

Ultraviolet (UV) light-emitting diodes (LEDs) emitting at 260 nm were evaluated to determine the inactivation kinetics of bacteria, viruses, and spores compared to low-pressure (LP) UV irradiation. Test microbes were Escherichia coli B, a non-enveloped virus (MS-2), and a bacterial spore (Bacillus atrophaeus). For LP UV, 4-log10 reduction doses were: E. coli B, 6.5 mJ/cm(2); MS-2, 59.3 mJ/cm(2); and B. atrophaeus, 30.0 mJ/cm(2). For UV LEDs, the 4-log10 reduction doses were E. coli B, 6.2 mJ/cm(2); MS-2, 58 mJ/cm(2); and B. atrophaeus, 18.7 mJ/cm(2). Microbial inactivation kinetics of the two UV technologies were not significantly different for E. coli B and MS-2, but were different for B. atrophaeus spores. UV LEDs at 260 nm are at least as effective for inactivating microbes in water as conventional LP UV sources and should undergo further development in treatment systems to disinfect drinking water.

Enhancing Light Emission of ZnO-Nanofilm/Si-Micropillar Heterostructure Arrays by Piezo-Phototronic Effect.

PubMed

Li, Xiaoyi; Chen, Mengxiao; Yu, Ruomeng; Zhang, Taiping; Song, Dongsheng; Liang, Renrong; Zhang, Qinglin; Cheng, Shaobo; Dong, Lin; Pan, Anlian; Wang, Zhong Lin; Zhu, Jing; Pan, Caofeng

2015-06-22

n-ZnO nanofilm/p-Si micropillar heterostructure light-emitting diode (LED) arrays for white light emissions are achieved and the light emission intensity of LED array is enhanced by 120% under -0.05% compressive strains. These results indicate a promising approach to fabricate Si-based light-emitting components with high performances enhanced by piezo-phototronic effect, with potential applications in touchpad technology, personalized signatures, smart skin, and silicon-based photonic integrated circuits. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Research progress of infrared detecting and display integrated device based on infrared-visible up-conversion technology

NASA Astrophysics Data System (ADS)

Xu, Junfeng; Li, Weile; He, Bo; Wang, Haowei; Song, Yong; Yang, Shengyi; Ni, Guoqiang

2018-01-01

Infrared detecting and display device (IR-DDD) is a newly developed optical up-conversion device that integrates the light-emitting diode (LED) onto the infrared (IR) photo-detector, in order to convert IR light into the carriers photo-generated in detection materials and inject them into LED to emit visible light. This IR-DDD can achieve the direct up-conversion from IR ray to visible light, showing the considerable potential in night-vision application. This paper attempts a review of its working principle and current research progresses.

Preparation of a YAG:Ce phosphor glass by screen-printing technology and its application in LED packaging.

PubMed

Yang, Liang; Chen, Mingxiang; Lv, Zhicheng; Wang, Simin; Liu, Xiaogang; Liu, Sheng

2013-07-01

A simple and practical method for preparing phosphor glass is proposed. Phosphor distribution and element analysis are investigated by optical microscope and field emission scanning electron microscope (FE-SEM). The phosphor particles dispersed in the matrix are vividly observed, and their distributions are uniform. Spectrum distribution and color coordinates dependent on the thickness of the screen-printed phosphor layer coupled with a blue light emitting diode (LED) chip are studied. The luminous efficacy of the 75 μm printed phosphor-layer phosphor glass packaged white LED is 81.24 lm/W at 350 mA. This study opens up many possibilities for applications using the phosphor glass on a selected chip in which emission is well absorbed by all phosphors. The screen-printing technique also offers possibilities for the design and engineering of complex phosphor layers on glass substrates. Phosphor screen-printing technology allows the realization of high stability and thermal conductivity for the phosphor layer. This phosphor glass method provides many possibilities for LED packing, including thin-film flip chip and remote phosphor technology.

Analysis of Environmental Effects on Leaf Temperature under Sunlight, High Pressure Sodium and Light Emitting Diodes.

PubMed

Nelson, Jacob A; Bugbee, Bruce

2015-01-01

The use of LED technology is commonly assumed to result in significantly cooler leaf temperatures than high pressure sodium technology. To evaluate the magnitude of this effect, we measured radiation incident to and absorbed by a leaf under four radiation sources: clear sky sunlight in the field, sunlight in a glass greenhouse, and indoor plants under either high pressure sodium or light emitting diodes. We then applied a common mechanistic energy-balance model to compare leaf to air temperature difference among the radiation sources and environments. At equal photosynthetic photon flux, our results indicate that the effect of plant water status and leaf evaporative cooling is much larger than the effect of radiation source. If plants are not water stressed, leaves in all four radiation sources were typically within 2°C of air temperature. Under clear sky conditions, cool sky temperatures mean that leaves in the field are always cooler than greenhouse or indoor plants-when photosynthetic photon flux, stomatal conductance, wind speed, vapor pressure deficit, and leaf size are equivalent. As water stress increases and cooling via transpiration decreases, leaf temperatures can increase well above air temperature. In a near-worst case scenario of water stress and low wind, our model indicates that leaves would increase 6°, 8°, 10°, and 12°C above air temperature under field, LED, greenhouse, and HPS scenarios, respectively. Because LED fixtures emit much of their heat through convection rather than radiative cooling, they result in slightly cooler leaf temperatures than leaves in greenhouses and under HPS fixtures, but the effect of LED technology on leaf temperature is smaller than is often assumed. Quantifying the thermodynamic outputs of these lamps, and their physiological consequences, will allow both researchers and the horticulture industry to make informed decisions when employing these technologies.

Analysis of Environmental Effects on Leaf Temperature under Sunlight, High Pressure Sodium and Light Emitting Diodes

PubMed Central

Nelson, Jacob A.; Bugbee, Bruce

2015-01-01

The use of LED technology is commonly assumed to result in significantly cooler leaf temperatures than high pressure sodium technology. To evaluate the magnitude of this effect, we measured radiation incident to and absorbed by a leaf under four radiation sources: clear sky sunlight in the field, sunlight in a glass greenhouse, and indoor plants under either high pressure sodium or light emitting diodes. We then applied a common mechanistic energy-balance model to compare leaf to air temperature difference among the radiation sources and environments. At equal photosynthetic photon flux, our results indicate that the effect of plant water status and leaf evaporative cooling is much larger than the effect of radiation source. If plants are not water stressed, leaves in all four radiation sources were typically within 2°C of air temperature. Under clear sky conditions, cool sky temperatures mean that leaves in the field are always cooler than greenhouse or indoor plants-when photosynthetic photon flux, stomatal conductance, wind speed, vapor pressure deficit, and leaf size are equivalent. As water stress increases and cooling via transpiration decreases, leaf temperatures can increase well above air temperature. In a near-worst case scenario of water stress and low wind, our model indicates that leaves would increase 6°, 8°, 10°, and 12°C above air temperature under field, LED, greenhouse, and HPS scenarios, respectively. Because LED fixtures emit much of their heat through convection rather than radiative cooling, they result in slightly cooler leaf temperatures than leaves in greenhouses and under HPS fixtures, but the effect of LED technology on leaf temperature is smaller than is often assumed. Quantifying the thermodynamic outputs of these lamps, and their physiological consequences, will allow both researchers and the horticulture industry to make informed decisions when employing these technologies. PMID:26448613

The LED outdoor lighting revolution : Opportunities, threats and mitigation

NASA Astrophysics Data System (ADS)

Aube, Martin

2017-01-01

The presence of artificial light at night (ALAN) in environment is now known to have non negligible consequences on the night sky, the fauna, the flora and the human health. A real revolution is undergoing in the outdoor lighting industry threatens the night integrity. This revolution is driven by the advent of the cost-effective Light-Emitting Diode (LED) technology into the outdoor lighting industry. The LEDs provides many opportunities: they are long lasting, easily controlled, and generally allow a more efficient photometric design which, in term, may result in energy savings.After explaining the complex and non-linear behaviour of the propagation of the ALAN into the nocturnal environment, we will outline the potential impact of the ALAN on the human health and on the night sky, and we will introduce some dedicated indicators for its evaluation. We will focus on the role of the blue content of the ALAN in the evaluation of its impact. More specifically we will show how white LED technology, that often shows increased blue light content, compares to the traditional High Pressure Sodium technology. Finally, we will identify the possible mitigations to restrict the adverse impacts of the white LEDs in the urban and rural environment.

Laser and LED external teeth-bleaching

NASA Astrophysics Data System (ADS)

Zanin, Fatima A.; Brugnera, Aldo, Jr.; Marchesan, Melissa A.; Pecora, Jesus D.

2004-09-01

Teeth-bleaching is an initial phase in the reproduction of an aesthetic smile; thus, it is very important that the dentist knows how to diagnose the causes of color changes and indicate whitening before proposing dental treatment. Technological advances in teeth-whitening lead to the development of new techniques, improving comfort, security and decreasing time of execution: argon laser, diode Laser, LED whitening, xenon light whitening. The clearing agent used in all techniques, including home whitening, is hydrogen peroxide (H2O2) in different concentrations. In this study, the authors describe mechanisms of gel activation, the use of Laser and LED"s for teeth-bleaching, the importance of diagnosis and the comfort of the patient in in-office teeth-bleaching techniques.

Demonstration Assessment of Light-Emitting Diode (LED) Post-Top Lighting at Central Park in New York City

DOE Office of Scientific and Technical Information (OSTI.GOV)

Myer, Michael; Goettel, Russell T.; Kinzey, Bruce R.

2012-09-30

A review of five post-top light-emitting diode (LED) pedestrian luminaires installed in New York City's Central Park for possible replacement to the existing metal halide post-top luminaire. This report reviews the energy savings potential and lighting delivered by the LED post-top luminaires.

A Simple, Small-Scale Lego Colorimeter with a Light-Emitting Diode (LED) Used as Detector

ERIC Educational Resources Information Center

Asheim, Jonas; Kvittingen, Eivind V.; Kvittingen, Lise; Verley, Richard

2014-01-01

This article describes how to construct a simple, inexpensive, and robust colorimeter from a few Lego bricks, in which one light-emitting diode (LED) is used as a light source and a second LED as a light detector. The colorimeter is suited to various grades and curricula.

Conduction-driven cooling of LED-based automotive LED lighting systems for abating local hot spots

NASA Astrophysics Data System (ADS)

Saati, Ferina; Arik, Mehmet

2018-02-01

Light-emitting diode (LED)-based automotive lighting systems pose unique challenges, such as dual-side packaging (front side for LEDs and back side for driver electronics circuit), size, harsh ambient, and cooling. Packaging for automotive lighting applications combining the advanced printed circuit board (PCB) technology with a multifunctional LED-based board is investigated with a focus on the effect of thermal conduction-based cooling for hot spot abatement. A baseline study with a flame retardant 4 technology, commonly known as FR4 PCB, is first compared with a metal-core PCB technology, both experimentally and computationally. The double-sided advanced PCB that houses both electronics and LEDs is then investigated computationally and experimentally compared with the baseline FR4 PCB. Computational models are first developed with a commercial computational fluid dynamics software and are followed by an advanced PCB technology based on embedded heat pipes, which is computationally and experimentally studied. Then, attention is turned to studying different heat pipe orientations and heat pipe placements on the board. Results show that conventional FR4-based light engines experience local hot spots (ΔT>50°C) while advanced PCB technology based on heat pipes and thermal spreaders eliminates these local hot spots (ΔT<10°C), leading to a higher lumen extraction with improved reliability. Finally, possible design options are presented with embedded heat pipe structures that further improve the PCB performance.

Clinical comparison between the bleaching efficacy of light-emitting diode and diode laser with sodium perborate.

PubMed

Koçak, Sibel; Koçak, Mustafa Murat; Sağlam, Baran Can

2014-04-01

The aim of this clinical study was to test the efficacy of a light-emitting diode (LED) light and a diode laser, when bleaching with sodium perborate. Thirty volunteers were selected to participate in the study. The patients were randomly divided into two groups. The initial colour of each tooth to be bleached was quantified with a spectrophotometer. In group A, sodium perborate and distilled water were mixed and placed into the pulp chamber, and the LED light was source applied. In group B, the same mixture was used, and the 810 nm diode laser was applied. The final colour of each tooth was quantified with the same spectrophotometer. Initial and final spectrophotometer values were recorded. Mann-Whitney U-test and Wicoxon tests were used to test differences between both groups. Both devices successfully whitened the teeth. No statistical difference was found between the efficacy of the LED light and the diode laser. © 2013 The Authors. Australian Endodontic Journal © 2013 Australian Society of Endodontology.

Development and Industrialization of InGaN/GaN LEDs on Patterned Sapphire Substrates for Low Cost Emitter Architecture

DOE Office of Scientific and Technical Information (OSTI.GOV)

Flemish, Joseph; Soer, Wouter

2015-11-30

Patterned sapphire substrate (PSS) technology has proven to be an effective approach to improve efficacy and reduce cost of light-emitting diodes (LEDs). The volume emission from the transparent substrate leads to high package efficiency, while the simple and robust architecture of PSS-based LEDs enables low cost. PSS substrates have gained wide use in mid-power LEDs over the past years. In this project, Lumileds has developed and industrialized PSS and epitaxy technology for high- power flip-chip LEDs to bring these benefits to a broader range of applications and accelerate the adoption of energy-efficient solid-state lighting (SSL). PSS geometries were designed formore » highly efficient light extraction in a flip-chip architecture and high-volume manufacturability, and corresponding sapphire patterning and epitaxy manufacturing processes were integrally developed. Concurrently, device and package architectures were developed to take advantage of the PSS flip-chip die in different types of products that meet application needs. The developed PSS and epitaxy technology has been fully implemented in manufacturing at Lumileds’ San Jose, CA location, and incorporated in illumination-grade LED products that have been successfully introduced to the market, including LUXEON Q and LUXEON FlipChip White.« less

Response of adult mosquitoes to light-emitting diodes placed in resting boxes and in the field.

PubMed

Bentley, Michael T; Kaufman, Phillip E; Kline, Daniel L; Hogsette, Jerome A

2009-09-01

The response of adult mosquitoes to 4 light-emitting diode (LED) wavelengths was evaluated using diode-equipped sticky cards (DESCs) and diode-equipped resting boxes at 2 sites in north central Florida. Wavelengths evaluated were blue (470 nm), green (502 nm), red (660 nm), and infrared (IR) (860 nm). When trapping with DESCs, 15 mosquito species from 7 genera (Aedes, Anopheles, Coquillettidia, Culex, Mansonia, Psorophora, and Uranotaenia) were captured. Overall, approximately 43.8% of all mosquitoes were trapped on DESCs fitted with green LEDs. Significantly more females of Aedes infirmatus, Aedes vexans, and Culex nigripalpus were captured on DESCs fitted with blue LEDs compared with red or IR LEDs. DESCs with blue LEDs captured significantly more Culex erraticus females than those with IR LEDs. Using resting boxes, 12 species from 5 genera (Anopheles, Coquillettidia, Culex, Mansonia, and Uranotaenia) were collected. Resting boxes without LEDs captured 1,585 mosquitoes (22.2% of total). The fewest number of mosquitoes (16.7%) were collected from boxes affixed with the blue LEDs. Significantly more Anopheles quadrimaculatus females were aspirated from resting boxes fitted with red and IR LEDs than from those with blue or green LEDs, or from the unlit control. Blood-fed mosquitoes were recovered in highest numbers from unlit resting boxes, followed by resting boxes fitted with green, IR, and blue LEDs. Culex erraticus accounted for the majority of blood-fed mosquitoes followed by Coquillettidia perturbans. No blood-fed mosquitoes were recovered from resting boxes fitted with red LEDs.

A review of gallium nitride LEDs for multi-gigabit-per-second visible light data communications

NASA Astrophysics Data System (ADS)

Rajbhandari, Sujan; McKendry, Jonathan J. D.; Herrnsdorf, Johannes; Chun, Hyunchae; Faulkner, Grahame; Haas, Harald; Watson, Ian M.; O'Brien, Dominic; Dawson, Martin D.

2017-02-01

The field of visible light communications (VLC) has gained significant interest over the last decade, in both fibre and free-space embodiments. In fibre systems, the availability of low cost polymer optical fibre (POF) that is compatible with visible data communications has been a key enabler. In free-space applications, the availability of hundreds of THz of the unregulated spectrum makes VLC attractive for wireless communications. This paper provides an overview of the recent developments in VLC systems based on gallium nitride (GaN) light-emitting diodes (LEDs), covering aspects from sources to systems. The state-of-the-art technology enabling bandwidth of GaN LEDs in the range of >400 MHz is explored. Furthermore, advances in key technologies, including advanced modulation, equalisation, and multiplexing that have enabled free-space VLC data rates beyond 10 Gb s-1 are also outlined.

Light emitting diodes (LED): applications in forest and native plant nurseries

Treesearch

Thomas D. Landis; Jeremiah R. Pinto; R. Kasten Dumroese

2013-01-01

It was quotes like this that made us want to learn more about light emitting diodes (LED). Other than knowing that LEDs were the latest innovation in artificial lighting, we knew that we had a lot to learn. So we started by reviewing some of the basics. The following review is a brief synopsis of how light affects plants and some discussion about LED lighting. If you...

Laser and LED external teeth-bleaching

NASA Astrophysics Data System (ADS)

Zanin, Fatima; Brugnera, Aldo, Jr.; Marchesan, Melissa A.; Pecora, Jesus D.

2004-05-01

Teeth-bleaching is an initial phase in the reproduction of an aesthetic smile; thus, it is very important that the dentist knows how to diagnose the causes of color changes and indicate whitening before proposing dental treatment. Technological advances in teeth-whitening lead to the development of new techniques, improving comfort, security and decreasing time of execution: argon laser, diode laser, LED whitening, xenon light whitening. The clearing agent used in all techniques, including home whitening, is hydrogen peroxide (H2O2) in different concentrations. In this study, the authors describe mechanisms of gel activation, the use of Laser and LED's for teeth-bleaching, the importance of diagnosis and the comfort of the patient in in-office teeth-bleaching techniques.

Using UVC Light-Emitting Diodes at Wavelengths of 266 to 279 Nanometers To Inactivate Foodborne Pathogens and Pasteurize Sliced Cheese

PubMed Central

Kim, Soo-Ji; Kim, Do-Kyun

2015-01-01

UVC light is a widely used sterilization technology. However, UV lamps have several limitations, including low activity at refrigeration temperatures, a long warm-up time, and risk of mercury exposure. UV-type lamps only emit light at 254 nm, so as an alternative, UV light-emitting diodes (UV-LEDs) which can produce the desired wavelengths have been developed. In this study, we validated the inactivation efficacy of UV-LEDs by wavelength and compared the results to those of conventional UV lamps. Selective media inoculated with Escherichia coli O157:H7, Salmonella enterica serovar Typhimurium, and Listeria monocytogenes were irradiated using UV-LEDs at 266, 270, 275, and 279 nm in the UVC spectrum at 0.1, 0.2, 0.5, and 0.7 mJ/cm2, respectively. The radiation intensity of the UV-LEDs was about 4 μW/cm2, and UV lamps were covered with polypropylene films to adjust the light intensity similar to those of UV-LEDs. In addition, we applied UV-LED to sliced cheese at doses of 1, 2, and 3 mJ/cm2. Our results showed that inactivation rates after UV-LED treatment were significantly different (P < 0.05) from those of UV lamps at a similar intensity. On microbiological media, UV-LED treatments at 266 and 270 nm showed significantly different (P < 0.05) inactivation effects than other wavelength modules. For sliced cheeses, 4- to 5-log reductions occurred after treatment at 3 mJ/cm2 for all three pathogens, with negligible generation of injured cells. PMID:26386061

Calibration of optimal use parameters for an ultraviolet light-emitting diode in eliminating bacterial contamination on needleless connectors.

PubMed

Hutchens, M P; Drennan, S L; Cambronne, E D

2015-06-01

Needleless connectors may develop bacterial contamination and cause central-line-associated bloodstream infections (CLABSI) despite rigorous application of best-practice. Ultraviolet (UV) light-emitting diodes (LED) are an emerging, increasingly affordable disinfection technology. We tested the hypothesis that a low-power UV LED could reliably eliminate bacteria on needleless central-line ports in a laboratory model of central-line contamination. Needleless central-line connectors were inoculated with Staphylococcus aureus. A 285 nm UV LED was used in calibrated fashion to expose contaminated connectors. Ports were directly applied to agar plates and flushed with sterile saline, allowing assessment of bacterial survival on the port surface and in simulated usage flow-through fluid. UV applied to needleless central-line connectors was highly lethal at 0·5 cm distance at all tested exposure times. At distances >1·5 cm both simulated flow-through and port surface cultures demonstrated significant bacterial growth following UV exposure. Logarithmic-phase S. aureus subcultures were highly susceptible to UV induction/maintenance dosing. Low-power UV LED doses at fixed time and distance from needleless central-line connector ports reduced cultivable S. aureus from >10(6) CFU to below detectable levels in this laboratory simulation of central-line port contamination. Low-power UV LEDs may represent a feasible alternative to current best-practice in connector decontamination. © 2015 The Society for Applied Microbiology.

Improved performance of near UV light-emitting diodes with a composition-graded p-AlGaN irregular sawtooth electron-blocking layer

NASA Astrophysics Data System (ADS)

Qin, Ping; Song, Wei-Dong; Hu, Wen-Xiao; Zhang, Yuan-Wen; Zhang, Chong-Zhen; Wang, Ru-Peng; Zhao, Liang-Liang; Xia, Chao; Yuan, Song-Yang; Yin, Yi-an; Li, Shu-Ti; Su, Shi-Chen

2016-08-01

We investigate the performances of the near-ultraviolet (about 350 nm-360 nm) light-emitting diodes (LEDs) each with specifically designed irregular sawtooth electron blocking layer (EBL) by using the APSYS simulation program. The internal quantum efficiencies (IQEs), light output powers, carrier concentrations in the quantum wells, energy-band diagrams, and electrostatic fields are analyzed carefully. The results indicate that the LEDs with composition-graded p-Al x Ga1-x N irregular sawtooth EBLs have better performances than their counterparts with stationary component p-AlGaN EBLs. The improvements can be attributed to the improved polarization field in EBL and active region as well as the alleviation of band bending in the EBL/p-AlGaN interface, which results in less electron leakage and better hole injection efficiency, thus reducing efficiency droop and enhancing the radiative recombination rate. Project supported by the National Natural Science Foundation of China (Grant Nos. 11474105 and 51172079), the Science and Technology Program of Guangdong Province, China (Grant Nos. 2015B090903078 and 2015B010105011), the Program for Changjiang Scholars and Innovative Research Team in University, China (Grant No. IRT13064), the Science and Technology Project of Guangzhou City, China (Grant No. 201607010246), and the Science and Technology Planning Project of Guangdong Province, China (Grant No. 2015A010105025).

Fabrication and characteristics of excellent current spreading GaN-based LED by using transparent electrode-insulator-semiconductor structure

NASA Astrophysics Data System (ADS)

Qi, Chenglin; Huang, Yang; Zhan, Teng; Wang, Qinjin; Yi, Xiaoyan; Liu, Zhiqiang

2017-08-01

GaN-based vertical light-emitting-diodes (V-LEDs) with an improved current injection pattern were fabricated and a novel current injection pattern of LEDs which consists of electrode-insulator-semiconductor (EIS) structure was proposed. The EIS structure was achieved by an insulator layer (20-nm Ta2O5) deposited between the p-GaN and the ITO layer. This kind of EIS structure works through a defect-assisted tunneling mechanism to realize current injection and obtains a uniform current distribution on the chip surface, thus greatly improving the current spreading ability of LEDs. The appearance of this novel current injection pattern of V-LEDs will subvert the impression of the conventional LEDs structure, including simplifying the chip manufacture technology and reducing the chip cost. Under a current density of 2, 5, 10, and 25 A/cm2, the luminous uniformity was better than conventional structure LEDs. The standard deviation of power density distribution in light distribution was 0.028, which was much smaller than that of conventional structure LEDs and illustrated a huge advantage on the current spreading ability of EIS-LEDs. Project supported by the Natural Science Foundation of China (Nos. 61306051, 61306050) and the National High Technology Program of China (No. 2014AA032606).

Structural, electrical and optical characterization of high brightness phosphor-free white light emitting diodes

NASA Astrophysics Data System (ADS)

Omiya, Hiromasa

Much interest currently exists in GaN and related materials for applications such as light-emitting devices operating in the amber to ultraviolet range. Solid-state lighting (SSL) using these materials is widely being investigated worldwide, especially due to their high-energy efficiency and its impact on environmental issues. A new approach for solid-state lighting uses phosphor-free white light emitting diodes (LEDs) that consist of blue, green, and red quantum wells (QW), all in a single device. This approach leads to improved color rendering, and directionality, compared to the conventional white LEDs that use yellow phosphor on blue or ultraviolet emitters. Improving the brightness of these phosphor-free white LEDs should enhance and accelerate the development of SSL technology. The main objective of the research reported in this dissertation is to provide a comprehensive understanding of the nature of the multiple quantum wells used in phosphor-free white LEDs. This dissertation starts with an introduction to lighting history, the fundamental concepts of nitride semiconductors, and the evolution of LED technology. Two important challenges in LED technology today are metal-semiconductor contacts and internal piezoelectric fields present in quantum well structures. Thus, the main portion of this dissertation consists of three parts dealing with metal-semiconductor interfaces, single quantum well structures, and multiple quantum well devices. Gold-nickel alloys are widely used as contacts to the p-region of LEDs. We have performed a detailed study for its evolution under standard annealing steps. The atomic arrangement of gold at its interface with GaN gives a clear explanation for the improved ohmic contact performance. We next focus on the nature of InGaN QWs. The dynamic response of the QWs was studied with electron holography and time-resolved cathodoluminescence. Establishing the correlation between energy band structure and the light emission spectra elucidated the nature of light emission. Finally, we studied a more complex device, consisting of two red, one green, and two blue emitting quantum wells. A correlation between structural, electrical and optical measurements allows us to understand the dynamic performance of this device. The collective results of this dissertation lead to an improved understanding of the performance of high-brightness, phosphor-free, white LEDs.

Silicon carbide, a semiconductor for space power electronics

NASA Technical Reports Server (NTRS)

Powell, J. Anthony; Matus, Lawrence G.

1991-01-01

After many years of promise as a high temperature semiconductor, silicon carbide (SiC) is finally emerging as a useful electronic material. Recent significant progress that has led to this emergence has been in the areas of crystal growth and device fabrication technology. High quality single-crystal SiC wafers, up to 25 mm in diameter, can now be produced routinely from boules grown by a high temperature (2700 K) sublimation process. Device fabrication processes, including chemical vapor deposition (CVD), in situ doping during CVD, reactive ion etching, oxidation, metallization, etc. have been used to fabricate p-n junction diodes and MOSFETs. The diode was operated to 870 K and the MOSFET to 770 K.

New developments on high-efficiency infrared and InGaAlP light-emitting diodes at OSRAM Opto Semiconductors

NASA Astrophysics Data System (ADS)

Broell, Markus; Sundgren, Petrus; Rudolph, Andreas; Schmid, Wolfgang; Vogl, Anton; Behringer, Martin

2014-02-01

We present our latest results on developments of infrared and red light emitting diodes. Both chiptypes are based on the Thinfilm technology. For infrared the brightness has been raised by 25% with respect to former products in a package with standard silicon casting, corresponding to a brightness increase of 33% for the bare chip. In a lab package a wallplug efficiency of more than 72% at a wavelength of 850nm could be reached. For red InGaAlP LEDs we could demonstrate a light output in excess of 200lm/W and a brightness of 133lm at a typical operating current of 350mA.

Light Source

NASA Technical Reports Server (NTRS)

1993-01-01

Research on food growth for long duration spacecraft has resulted in a light source for growing plants indoors known as Qbeam, a solid state light source consisting of a control unit and lamp. The light source, manufactured by Quantum Devices, Inc., is not very hot, although it generates high intensity radiation. When Ron Ignatius, an industrial partner of WCSAR, realized that terrestrial plant research lighting was not energy efficient enough for space use, he and WCSAR began to experiment with light emitting diodes. A line of LED products was developed, and QDI was formed to market the technology. An LED-based cancer treatment device is currently under development.

The Use of Light-Emitting Diodes (LEDs) as Green and Red/Far-Red Light Sources in Plant Physiology.

ERIC Educational Resources Information Center

Jackson, David L.; And Others

1985-01-01

The use of green, red, and far-red light-emitting diodes (LEDs) as light sources for plant physiological studies is outlined and evaluated. Indicates that LED lamps have the advantage over conventional light sources in that they are lightweight, low-cost, portable, easily constructed, and do not require color filters. (Author/DH)

Advantages of III-nitride laser diodes in solid-state lighting: Advantages of III-nitride laser diodes in solid-state lighting

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wierer, Jonathan J.; Tsao, Jeffrey Y.

2015-01-14

III-nitride laser diodes (LDs) are an interesting light source for solid-state lighting (SSL). Modelling of LDs is performed to reveal the potential advantages over traditionally used light-emitting diodes (LEDs). The first, and most notable, advantage is LDs have higher efficiency at higher currents when compared to LEDs. This is because Auger recombination that causes efficiency droop can no longer grow after laser threshold. Second, the same phosphor-converted methods used with LEDs can also be used with LDs to produce white light with similar color rendering and color temperature. Third, producing white light from color mixed emitters is equally challenging formore » both LEDs and LDs, with neither source having a direct advantage. Fourth, the LD emission is directional and can be more readily captured and focused, leading to the possibility of novel and more compact luminaires. Finally, the smaller area and higher current density operation of LDs provides them with a potential cost advantage over LEDs. These advantages make LDs a compelling source for future SSL.« less

Light-emitting diode-based multiwavelength diffuse optical tomography system guided by ultrasound

PubMed Central

Yuan, Guangqian; Alqasemi, Umar; Chen, Aaron; Yang, Yi; Zhu, Quing

2014-01-01

Abstract. Laser diodes are widely used in diffuse optical tomography (DOT) systems but are typically expensive and fragile, while light-emitting diodes (LEDs) are cheaper and are also available in the near-infrared (NIR) range with adequate output power for imaging deeply seated targets. In this study, we introduce a new low-cost DOT system using LEDs of four wavelengths in the NIR spectrum as light sources. The LEDs were modulated at 20 kHz to avoid ambient light. The LEDs were distributed on a hand-held probe and a printed circuit board was mounted at the back of the probe to separately provide switching and driving current to each LED. Ten optical fibers were used to couple the reflected light to 10 parallel photomultiplier tube detectors. A commercial ultrasound system provided simultaneous images of target location and size to guide the image reconstruction. A frequency-domain (FD) laser-diode-based system with ultrasound guidance was also used to compare the results obtained from those of the LED-based system. Results of absorbers embedded in intralipid and inhomogeneous tissue phantoms have demonstrated that the LED-based system provides a comparable quantification accuracy of targets to the FD system and has the potential to image deep targets such as breast lesions. PMID:25473884

Safety Evaluation of Converting Traffic Signals From Incandescent to Light-emitting Diodes : Summary Report

DOT National Transportation Integrated Search

2013-08-01

Across the Nation, many agencies have been replacing conventional incandescent light bulbs in traffic signals with light-emitting diodes (LED) (see figure 1 and figure 2). LEDs are primarily installed to reduce energy consumption and decrease mainten...

Scalable Light Module for Low-Cost, High-Efficiency Light- Emitting Diode Luminaires

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tarsa, Eric

2015-08-31

During this two-year program Cree developed a scalable, modular optical architecture for low-cost, high-efficacy light emitting diode (LED) luminaires. Stated simply, the goal of this architecture was to efficiently and cost-effectively convey light from LEDs (point sources) to broad luminaire surfaces (area sources). By simultaneously developing warm-white LED components and low-cost, scalable optical elements, a high system optical efficiency resulted. To meet program goals, Cree evaluated novel approaches to improve LED component efficacy at high color quality while not sacrificing LED optical efficiency relative to conventional packages. Meanwhile, efficiently coupling light from LEDs into modular optical elements, followed by optimallymore » distributing and extracting this light, were challenges that were addressed via novel optical design coupled with frequent experimental evaluations. Minimizing luminaire bill of materials and assembly costs were two guiding principles for all design work, in the effort to achieve luminaires with significantly lower normalized cost ($/klm) than existing LED fixtures. Chief project accomplishments included the achievement of >150 lm/W warm-white LEDs having primary optics compatible with low-cost modular optical elements. In addition, a prototype Light Module optical efficiency of over 90% was measured, demonstrating the potential of this scalable architecture for ultra-high-efficacy LED luminaires. Since the project ended, Cree has continued to evaluate optical element fabrication and assembly methods in an effort to rapidly transfer this scalable, cost-effective technology to Cree production development groups. The Light Module concept is likely to make a strong contribution to the development of new cost-effective, high-efficacy luminaries, thereby accelerating widespread adoption of energy-saving SSL in the U.S.« less

Combatant Eye Protection: An Introduction to the Blue Light Hazard

DTIC Science & Technology

2015-12-01

visible solar radiation (i.e., blue light ), as well as from light - emitting diode (LED)-generated radiant energy remains a questionable factor under...Garcia, M., Picaud, S., Attia D. 2011. Light - emitting diodes (LED) for domestic lighting : Any risks for the eye?. Progress in retinal and eye research...C., Sliney, D. H., Rollag, M., D., Hanifin, J. P., and Brainard, G. C. 2011. Blue light from light - emitting diodes elicits a dose-dependent

Effect of radiant heat on conventional glass ionomer cements during setting by using a blue light diode laser system (445 nm).

PubMed

Dionysopoulos, Dimitrios; Tolidis, Kosmas; Strakas, Dimitrios; Gerasimou, Paris; Sfeikos, Thrasyvoulos; Gutknecht, Norbert

2017-04-01

The aim of this in vitro study was to evaluate the effect of radiant heat on surface hardness of three conventional glass ionomer cements (GICs) by using a blue diode laser system (445 nm) and a light-emitting diode (LED) unit. Additionally, the safety of the laser treatment was evaluated. Thirty disk-shaped specimens were prepared of each tested GIC (Equia Fil, Ketac Universal Aplicap and Riva Self Cure). The experimental groups (n = 10) of the study were as follows: group 1 was the control group of the study; in group 2, the specimens were irradiated for 60 s at the top surface using a LED light-curing unit; and in group 3, the specimens were irradiated for 60 s at the top surface using a blue light diode laser system (445 nm). Statistical analysis was performed using one-way ANOVA and Tukey post-hoc tests at a level of significance of a = 0.05. Radiant heat treatments, with both laser and LED devices, increased surface hardness (p < 0.05) but in different extent. Blue diode laser treatment was seemed to be more effective compared to LED treatment. There were no alterations in surface morphology or chemical composition after laser treatment. The tested radiant heat treatment with a blue diode laser may be advantageous for the longevity of GIC restorations. The safety of the use of blue diode laser for this application was confirmed.

LED lighting increases the ecological impact of light pollution irrespective of color temperature.

PubMed

Pawson, S M; Bader, M K-F

Recognition of the extent and magnitude of night-time light pollution impacts on natural ecosystems is increasing, with pervasive effects observed in both nocturnal and diurnal species. Municipal and industrial lighting is on the cusp of a step change where energy-efficient lighting technology is driving a shift from “yellow” high-pressure sodium vapor lamps (HPS) to new “white” light-emitting diodes (LEDs). We hypothesized that white LEDs would be more attractive and thus have greater ecological impacts than HPS due to the peak UV-green-blue visual sensitivity of nocturnal invertebrates. Our results support this hypothesis; on average LED light traps captured 48% more insects than were captured with light traps fitted with HPS lamps, and this effect was dependent on air temperature (significant light × air temperature interaction). We found no evidence that manipulating the color temperature of white LEDs would minimize the ecological impacts of the adoption of white LED lights. As such, large-scale adoption of energy-efficient white LED lighting for municipal and industrial use may exacerbate ecological impacts and potentially amplify phytosanitary pest infestations. Our findings highlight the urgent need for collaborative research between ecologists and electrical engineers to ensure that future developments in LED technology minimize their potential ecological effects.

Experimental effective intensity of steady and flashing light emitting diodes for aircraft anti-collision lighting.

DOT National Transportation Integrated Search

2013-08-01

Research was conducted to determine the effective intensity of flashing lights that incorporate light-emitting diodes (LEDs). LEDs require less power and have the ability to flash without the addition of moving parts. Compared with incandescent bulbs...

The potential of ill-nitride laser diodes for solid-state lighting [Advantages of III-Nitride Laser Diodes in Solid-State Lighting

DOE PAGES

Wierer, Jonathan; Tsao, Jeffrey Y.

2014-09-01

III-nitride laser diodes (LDs) are an interesting light source for solid-state lighting (SSL). Modelling of LDs is performed to reveal the potential advantages over traditionally used light-emitting diodes (LEDs). The first, and most notable, advantage is LDs have higher efficiency at higher currents when compared to LEDs. This is because Auger recombination that causes efficiency droop can no longer grow after laser threshold. Second, the same phosphor-converted methods used with LEDs can also be used with LDs to produce white light with similar color rendering and color temperature. Third, producing white light from direct emitters is equally challenging for bothmore » LEDs and LDs, with neither source having a direct advantage. Lastly, the LD emission is directional and can be more readily captured and focused, leading to the possibility of novel and more compact luminaires. These advantages make LDs a compelling source for future SSL.« less

Light Emitting, Photovoltaic or Other Electronic Apparatus and System

NASA Technical Reports Server (NTRS)

Blanchard, Richard A. (Inventor); Lewandowski, Mark Allan (Inventor); Lowenthal, Mark D. (Inventor); Fuller, Kirk A. (Inventor); Frazier, Donald Odell (Inventor); Shotton, Neil O. (Inventor); Ray, William Johnstone (Inventor)

2016-01-01

The present invention provides an electronic apparatus, such as a lighting device comprised of light emitting diodes (LEDs) or a power generating apparatus comprising photovoltaic diodes, which may be created through a printing process, using a semiconductor or other substrate particle ink or suspension and using a lens particle ink or suspension. An exemplary apparatus comprises a base; at least one first conductor; a plurality of diodes coupled to the at least one first conductor; at least one second conductor coupled to the plurality of diodes; and a plurality of lenses suspended in a polymer deposited or attached over the diodes. The lenses and the suspending polymer have different indices of refraction. In some embodiments, the lenses and diodes are substantially spherical, and have a ratio of mean diameters or lengths between about 10:1 and 2:1. The diodes may be LEDs or photovoltaic diodes, and in some embodiments, have a junction formed at least partially as a hemispherical shell or cap.

Light Emitting, Photovoltaic or Other Electronic Apparatus and System

NASA Technical Reports Server (NTRS)

Shotton, Neil O. (Inventor); Lewandowski, Mark Allan (Inventor); Lowenthal, Mark D. (Inventor); Ray, William Johnstone (Inventor); Blanchard, Richard A. (Inventor); Fuller, Kirk A. (Inventor); Frazier, Donald Odell (Inventor)

2018-01-01

The present invention provides an electronic apparatus, such as a lighting device comprised of light emitting diodes (LEDs) or a power generating apparatus comprising photovoltaic diodes, which may be created through a printing process, using a semiconductor or other substrate particle ink or suspension and using a lens particle ink or suspension. An exemplary apparatus comprises a base; at least one first conductor; a plurality of diodes coupled to the at least one first conductor; at least one second conductor coupled to the plurality of diodes; and a plurality of lenses suspended in a polymer deposited or attached over the diodes. The lenses and the suspending polymer have different indices of refraction. In some embodiments, the lenses and diodes are substantially spherical, and have a ratio of mean diameters or lengths between about 10:1 and 2:1. The diodes may be LEDs or photovoltaic diodes, and in some embodiments, have a junction formed at least partially as a hemispherical shell or cap.

Light Emitting, Photovoltaic or Other Electronic Apparatus and System

NASA Technical Reports Server (NTRS)

Ray, William Johnstone (Inventor); Shotton, Neil O. (Inventor); Lewandowski, Mark Allan (Inventor); Lowenthal, Mark D. (Inventor); Blanchard, Richard A. (Inventor); Fuller, Kirk A. (Inventor); Frazier, Donald Odell (Inventor)

2016-01-01

The present invention provides an electronic apparatus, such as a lighting device comprised of light emitting diodes (LEDs) or a power generating apparatus comprising photovoltaic diodes, which may be created through a printing process, using a semiconductor or other substrate particle ink or suspension and using a lens particle ink or suspension. An exemplary apparatus comprises a base; at least one first conductor; a plurality of substantially spherical or optically resonant diodes coupled to the at least one first conductor; at least one second conductor coupled to the plurality of diodes; and a plurality of substantially spherical lenses suspended in a polymer attached or deposited over the diodes. The lenses and the suspending polymer have different indices of refraction. In some embodiments, the lenses and diodes have a ratio of mean diameters or lengths between about 10:1 and 2:1. The diodes may be LEDs or photovoltaic diodes, and in some embodiments, have a junction formed at least partially as a hemispherical shell or cap.

Light emitting, photovoltaic or other electronic apparatus and system

NASA Technical Reports Server (NTRS)

Ray, William Johnstone (Inventor); Lowenthal, Mark D. (Inventor); Shotton, Neil O. (Inventor); Blanchard, Richard A. (Inventor); Lewandowski, Mark Allan (Inventor); Fuller, Kirk A. (Inventor); Frazier, Donald Odell (Inventor)

2013-01-01

The present invention provides an electronic apparatus, such as a lighting device comprised of light emitting diodes (LEDs) or a power generating apparatus comprising photovoltaic diodes, which may be created through a printing process, using a semiconductor or other substrate particle ink or suspension and using a lens particle ink or suspension. An exemplary apparatus comprises a base; at least one first conductor; a plurality of diodes coupled to the at least one first conductor; at least one second conductor coupled to the plurality of diodes; and a plurality of lenses suspended in a polymer deposited or attached over the diodes. The lenses and the suspending polymer have different indices of refraction. In some embodiments, the lenses and diodes are substantially spherical, and have a ratio of mean diameters or lengths between about 10:1 and 2:1. The diodes may be LEDs or photovoltaic diodes, and in some embodiments, have a junction formed at least partially as a hemispherical shell or cap.

Light emitting, photovoltaic or other electronic apparatus and system

NASA Technical Reports Server (NTRS)

Lowenthal, Mark D. (Inventor); Blanchard, Richard A. (Inventor); Lewandowski, Mark Allan (Inventor); Frazier, Donald Odell (Inventor); Shotton, Neil O. (Inventor); Ray, William Johnstone (Inventor); Fuller, Kirk A. (Inventor)

2013-01-01

The present invention provides an electronic apparatus, such as a lighting device comprised of light emitting diodes (LEDs) or a power generating apparatus comprising photovoltaic diodes, which may be created through a printing process, using a semiconductor or other substrate particle ink or suspension and using a lens particle ink or suspension. An exemplary apparatus comprises a base; at least one first conductor; a plurality of substantially spherical or optically resonant diodes coupled to the at least one first conductor; at least one second conductor coupled to the plurality of diodes; and a plurality of substantially spherical lenses suspended in a polymer attached or deposited over the diodes. The lenses and the suspending polymer have different indices of refraction. In some embodiments, the lenses and diodes have a ratio of mean diameters or lengths between about 10:1 and 2:1. The diodes may be LEDs or photovoltaic diodes, and in some embodiments, have a junction formed at least partially as a hemispherical shell or cap.

High-Efficiency All-Solution-Processed Light-Emitting Diodes Based on Anisotropic Colloidal Heterostructures with Polar Polymer Injecting Layers.

PubMed

Castelli, Andrea; Meinardi, Francesco; Pasini, Mariacecilia; Galeotti, Francesco; Pinchetti, Valerio; Lorenzon, Monica; Manna, Liberato; Moreels, Iwan; Giovanella, Umberto; Brovelli, Sergio

2015-08-12

Colloidal quantum dots (QDs) are emerging as true candidates for light-emitting diodes with ultrasaturated colors. Here, we combine CdSe/CdS dot-in-rod heterostructures and polar/polyelectrolytic conjugated polymers to demonstrate the first example of fully solution-based quantum dot light-emitting diodes (QD-LEDs) incorporating all-organic injection/transport layers with high brightness, very limited roll-off and external quantum efficiency as high as 6.1%, which is 20 times higher than the record QD-LEDs with all-solution-processed organic interlayers and exceeds by over 200% QD-LEDs embedding vacuum-deposited organic molecules.

Usability of light-emitting diodes in precision approach path indicator systems by individuals with marginal color vision.

DOT National Transportation Integrated Search

2014-05-01

To save energy, the FAA is planning to convert from incandescent lights to light-emitting diodes (LEDs) in : precision approach path indicator (PAPI) systems. Preliminary work on the usability of LEDs by color vision-waivered pilots (Bullough, Skinne...

LED's in Physics Demos: A Handful of Examples.

ERIC Educational Resources Information Center

Lottis, Dan; Jaeger, Herbert

1996-01-01

Describes the use of light-emitting diodes (LED) instead of incandescent bulbs in experiments that generally use battery and bulbs to enable students to explore and understand fundamental electrical phenomena. Presents the following examples: Faraday's Law demonstration, conductors and insulators, and rectifying action of a diode. (JRH)

Reshaping Light-Emitting Diodes To Increase External Efficiency

NASA Technical Reports Server (NTRS)

Rogowski, Robert; Egalon, Claudio

1995-01-01

Light-emitting diodes (LEDs) reshaped, according to proposal, increasing amount of light emitted by decreasing fraction of light trapped via total internal reflection. Results in greater luminous output power for same electrical input power; greater external efficiency. Furthermore, light emitted by reshaped LEDs more nearly collimated (less diffuse). Concept potentially advantageous for conventional red-emitting LEDs. More advantageous for new "blue" LEDs, because luminous outputs and efficiencies of these devices very low. Another advantage, proposed conical shapes achieved relatively easily by chemical etching of semiconductor surfaces.

Recent advances in the science and technology for solid state lighting

NASA Astrophysics Data System (ADS)

Munkholm, Anneli

2003-03-01

Recent development of high power light emitting diodes (LEDs) has enabled fabrication of solid state devices with efficiencies that surpass that of incandescent light, as well as providing a total light output significantly exceeding that of conventional indicator LEDs. This breakthrough in high flux is opening up new applications for use of high power LEDs, such as liquid crystal display backlighting and automotive headlights. Some of the key elements to this technological breakthrough are the flip-chip device design, power packaging and phosphor coating technology, which will be discussed. In addition to device design improvements, our fundamental knowledge of the III-nitride material system is improving and has resulted in higher internal quantum efficiencies. Strain plays a significant role in complex AlInGaN heterostructures used in current devices. Using a multi-beam optical strain sensor (MOSS) system to measure the wafer curvature in situ, we have characterized the strain during metal-organic chemical vapor deposition of III-nitrides. Strain measurements of InGaN, AlGaN and Si-doped GaN films on GaN will be presented.

Improved Efficiency and Enhanced Color Quality of Light-Emitting Diodes with Quantum Dot and Organic Hybrid Tandem Structure.

PubMed

Zhang, Heng; Feng, Yuanxiang; Chen, Shuming

2016-10-03

Light-emitting diodes based on organic (OLEDs) and colloidal quantum dot (QLEDs) are widely considered as next-generation display technologies because of their attractive advantages such as self-emitting and flexible form factor. The OLEDs exhibit relatively high efficiency, but their color saturation is quite poor compared with that of QLEDs. In contrast, the QLEDs show very pure color emission, but their efficiency is lower than that of OLEDs currently. To combine the advantages and compensate for the weaknesses of each other, we propose a hybrid tandem structure which integrates both OLED and QLED in a single device architecture. With ZnMgO/Al/HATCN interconnecting layer, hybrid tandem LEDs are successfully fabricated. The demonstrated hybrid tandem devices feature high efficiency and high color saturation simultaneously; for example, the devices exhibit maximum current efficiency and external quantum efficiency of 96.28 cd/A and 25.90%, respectively. Meanwhile, the full width at half-maximum of the emission spectra is remarkably reduced from 68 to 44 nm. With the proposed hybrid tandem structure, the color gamut of the displays can be effectively increased from 81% to 100% NTSC. The results indicate that the advantages of different LED technologies can be combined in a hybrid tandem structure.

Temperature issues with white laser diodes, calculation and approach for new packages

NASA Astrophysics Data System (ADS)

Lachmayer, Roland; Kloppenburg, Gerolf; Stephan, Serge

2015-01-01

Bright white light sources are of significant importance for automotive front lighting systems. Today's upper class systems mainly use HID or LED light sources. As a further step laser diode based systems offer a high luminance, efficiency and allow the realization of new dynamic and adaptive light functions and styling concepts. The use of white laser diode systems in automotive applications is still limited to laboratories and prototypes even though announcements of laser based front lighting systems have been made. But the environment conditions for vehicles and other industry sectors differ from laboratory conditions. Therefor a model of the system's thermal behavior is set up. The power loss of a laser diode is transported as thermal flux from the junction layer to the diode's case and on to the environment. Therefor its optical power is limited by the maximum junction temperature (for blue diodes typically 125 - 150 °C), the environment temperature and the diode's packaging with its thermal resistances. In a car's headlamp the environment temperature can reach up to 80 °C. While the difference between allowed case temperature and environment temperature is getting small or negative the relevant heat flux also becomes small or negative. In early stages of LED development similar challenges had to be solved. Adapting LED packages to the conditions in a vehicle environment lead to today's efficient and bright headlights. In this paper the need to transfer these results to laser diodes is shown by calculating the diodes lifetimes based on the presented model.

Comparison of GeneXpert MTB/RIF assay and LED-FM microscopy for the diagnosis of extra pulmonary tuberculosis in Khyber Pakhtunkhwa, Pakistan.

PubMed

Khan, Anwar Sheed; Ali, Sajid; Khan, Muhammad Tahir; Ahmed, Sajjad; Khattak, Yasir; Abduljabbar; Irfan, Muhammad; Sajjad, Wasim

2018-04-27

GeneXpert is one of the recent technological instruments used to diagnose tuberculosis in a short span of time. In this study, the performance of GeneXpert MTB/RIF assay for the diagnosis of extrapulmonary tuberculosis (EPTB) was compared with light-emitting diode Fluorescent Microscopy (LED-FM) in Khyber Pakhtunkhwa, Pakistan. A total of 737 EPTB samples were collected from tuberculosis (TB) suspected patients. Out of these samples, male to female ratio was 53% (n=390) to 47% (n=347) respectively. The sensitivity and specificity was 73% and 100% for GeneXpert, while 40% and 100% for LED-FM microscopy. This shows that the sensitivity of GeneXpert is 40-50%, higher than LED-FM microscopy. GeneXpert also detected low number of bacilli as compared to LED-FM microscopy. Copyright © 2018 Sociedade Brasileira de Microbiologia. Published by Elsevier Editora Ltda. All rights reserved.

Detection and modeling of leakage current in AlGaN-based deep ultraviolet light-emitting diodes

DOE PAGES

Moseley, Michael William; Allerman, Andrew A.; Crawford, Mary H.; ...

2015-03-01

Current-voltage (IV) characteristics of two AlGaN-based deep ultraviolet (DUV) light-emitting diodes (LEDs) with differing densities of open-core threading dislocations (nanopipes) are analyzed. A three-diode circuit is simulated to emulate the IV characteristics of the DUV-LEDs, but is only able to accurately model the lower leakage current, lower nanopipe density DUV-LED. It was found that current leakage through the nanopipes in these structures is rectifying, despite nanopipes being previously established as inherently n-type. Using defect-sensitive etching, the nanopipes are revealed to terminate within the p-type GaN capping layer of the DUV-LEDs. The circuit model is modified to account for another p-nmore » junction between the n-type nanopipes and the p-type GaN, and an excellent fit to the IV characteristics of the leaky DUV-LED is achieved.« less

Using UVC Light-Emitting Diodes at Wavelengths of 266 to 279 Nanometers To Inactivate Foodborne Pathogens and Pasteurize Sliced Cheese.

PubMed

Kim, Soo-Ji; Kim, Do-Kyun; Kang, Dong-Hyun

2016-01-01

UVC light is a widely used sterilization technology. However, UV lamps have several limitations, including low activity at refrigeration temperatures, a long warm-up time, and risk of mercury exposure. UV-type lamps only emit light at 254 nm, so as an alternative, UV light-emitting diodes (UV-LEDs) which can produce the desired wavelengths have been developed. In this study, we validated the inactivation efficacy of UV-LEDs by wavelength and compared the results to those of conventional UV lamps. Selective media inoculated with Escherichia coli O157:H7, Salmonella enterica serovar Typhimurium, and Listeria monocytogenes were irradiated using UV-LEDs at 266, 270, 275, and 279 nm in the UVC spectrum at 0.1, 0.2, 0.5, and 0.7 mJ/cm(2), respectively. The radiation intensity of the UV-LEDs was about 4 μW/cm(2), and UV lamps were covered with polypropylene films to adjust the light intensity similar to those of UV-LEDs. In addition, we applied UV-LED to sliced cheese at doses of 1, 2, and 3 mJ/cm(2). Our results showed that inactivation rates after UV-LED treatment were significantly different (P < 0.05) from those of UV lamps at a similar intensity. On microbiological media, UV-LED treatments at 266 and 270 nm showed significantly different (P < 0.05) inactivation effects than other wavelength modules. For sliced cheeses, 4- to 5-log reductions occurred after treatment at 3 mJ/cm(2) for all three pathogens, with negligible generation of injured cells. Copyright © 2015, American Society for Microbiology. All Rights Reserved.

Long Persistent Light Emitting Diode Indicators

ERIC Educational Resources Information Center

Jia, Dongdong; Ma, Yiwei; Hunter, D. N.

2007-01-01

An undergraduate laboratory was designed for undergraduate students to make long persistent light emitting diode (LED) indicators using phosphors. Blue LEDs, which emit at 465 nm, were characterized and used as an excitation source. Long persistent phosphors, SrAl[subscript 2]O[subscript 4]:Eu[superscript 2+],Dy[superscript 3+] (green) and…

Comparative clinical study using laser and LED-therapy for orofacial pain relief: dentin hypersensitivity and cervicogenic headache

NASA Astrophysics Data System (ADS)

Lizarelli, Rosane F. Z.; Pizzo, Renata C. A.; Florez, Fernando L. E.; Grecco, Clovis; Speciali, Jose G.; Bagnato, Vanderlei S.

2015-06-01

Considering several clinical situations, low intensity laser therapy has been widely applied in pain relief or analgesia mechanism. With the advent of new LED-based (light emitting diode) light sources, the need of further clinical experiments aiming to compare the effectiveness among them is paramount. The LED system therapeutic use can be denominated as LEDT - Light Emitting Diode Therapy. This study proposed two clinical evaluations of pain relief effect: to dentin hypersensitivity and to cervicogenic headache using different sources of lasers (low and high intensity) and light emitting diodes (LEDs), one emitting at the spectral band of red (630+/- 5nm) and the other one at infrared band (880+/- 5nm). Two different clinical studies were performed and presented interesting results. Considering dentin hypersensitivity, red and infrared led were so effective than the control group (high intensity laser system); by the other side, considering cervicogenic headache, control group (infrared laser) was the best treatment in comparison to red and infrared led system.

Progress and prospects of GaN-based LEDs using nanostructures

NASA Astrophysics Data System (ADS)

Zhao, Li-Xia; Yu, Zhi-Guo; Sun, Bo; Zhu, Shi-Chao; An, Ping-Bo; Yang, Chao; Liu, Lei; Wang, Jun-Xi; Li, Jin-Min

2015-06-01

Progress with GaN-based light emitting diodes (LEDs) that incorporate nanostructures is reviewed, especially the recent achievements in our research group. Nano-patterned sapphire substrates have been used to grow an AlN template layer for deep-ultraviolet (DUV) LEDs. One efficient surface nano-texturing technology, hemisphere-cones-hybrid nanostructures, was employed to enhance the extraction efficiency of InGaN flip-chip LEDs. Hexagonal nanopyramid GaN-based LEDs have been fabricated and show electrically driven color modification and phosphor-free white light emission because of the linearly increased quantum well width and indium incorporation from the shell to the core. Based on the nanostructures, we have also fabricated surface plasmon-enhanced nanoporous GaN-based green LEDs using AAO membrane as a mask. Benefitting from the strong lateral SP coupling as well as good electrical protection by a passivation layer, the EL intensity of an SP-enhanced nanoporous LED was significantly enhanced by 380%. Furthermore, nanostructures have been used for the growth of GaN LEDs on amorphous substrates, the fabrication of stretchable LEDs, and for increasing the 3-dB modulation bandwidth for visible light communication. Project supported by the National Natural Science Foundation of China (Grant No. 61334009), the National High Technology Research and Development Program of China (Grant Nos. 2015AA03A101 and 2014BAK02B08), China International Science and Technology Cooperation Program (Grant No. 2014DFG62280), the “Import Outstanding Technical Talent Plan” and “Youth Innovation Promotion Association Program” of the Chinese Academy of Sciences.

Compact LED based LCOS optical engine for mobile projection

NASA Astrophysics Data System (ADS)

Zhang, Wenzi; Li, Xiaoyan; Liu, Qinxiao; Yu, Feihong

2009-11-01

With the development of high power LED (light emitting diode) technology and color filter LCOS (liquid crystal on silicon) technology, the research on LED based micro optical engine for mobile projection has been a hot topic recently. In this paper one compact LED powered LCOS optical engine design is presented, which is intended to be embedded in cell phone, digital camera, and so on. Compared to DLP (digital light processor) and traditional color sequential LCOS technology, the color filter based LCOS panel is chosen for the compact optical engine, this is because only white LED is needed. To further decrease the size of the optical engine, only one specifically designed plastic free form lens is applied in the illumination part of the optical engine. This free form lens is designed so that it plays the roles of both condenser and integrator, by which the output light of LED is condensed and redistributed, and light illumination of high efficiency, high uniformity and small incident angle on LCOS is acquired. Besides PBS (polarization beam splitter), LCOS, and projection lens, the compact optical engine contains only this piece of free form plastic lens, which can be produced by plastic injection molding. Finally a white LED powered LCOS optical engine with a compact size of less than 6.6 cc can be acquired. With the ray tracing simulation result, the light efficiency analysis shows that the output flux is over 8.5 ANSI lumens and the ANSI uniformity of over 80%.

Internal photoluminescence in ZnSe homoepitaxy and application in blue green orange mixed-color light-emitting diodes

NASA Astrophysics Data System (ADS)

Wenisch, H.; Fehrer, M.; Klude, M.; Ohkawa, K.; Hommel, D.

2000-06-01

We discuss the controllable color-range in ZnSe-based light-emitting diodes (LEDs) realized by ZnSe homoepitaxy and internal photoluminescence. ZnSe-based LED structures were grown by molecular-beam epitaxy (MBE) on mostly conductive ZnSe substrates, which exhibit under short wavelength light excitation at room temperature strong orange emission around 600 nm. This fact is exploited to fabricate integrated mixed-color LED chips, where light from the active layer sandwiched in a p-n-junction acts as internal excitation source. We named this effect recently "Internal Photoluminescence" (Wenisch et al., J. Appl. Phys. 82 (1997) 4690). It leads to electroluminescence spectra with two distinct emission peaks originated from the active layer and from the ZnSe substrate, respectively. In view of color impression, just by varying the Cd xZn 1- xSe quantum-well composition and the radiant recombination rate in the substrate by it's choice, as much as two thirds of the visible color space is covered. Under conditions, when only the substrate emission is present, Commission Internationale d'Eclairage (CIE) chromaticity coordinates for orange color LEDs of (0.54, 0.45, 0.01) for the red, green and blue color, respectively, were determined. 490-nm quantum-well-emitting LEDs were found to be best suited in reaching the technologically important balanced white emission ("White Point") and a value of (0.31, 0.39, 0.30) for the color coordinates close to it was experimentally achieved.

High-Brightness Blue Light-Emitting Diodes Enabled by a Directly Grown Graphene Buffer Layer.

PubMed

Chen, Zhaolong; Zhang, Xiang; Dou, Zhipeng; Wei, Tongbo; Liu, Zhiqiang; Qi, Yue; Ci, Haina; Wang, Yunyu; Li, Yang; Chang, Hongliang; Yan, Jianchang; Yang, Shenyuan; Zhang, Yanfeng; Wang, Junxi; Gao, Peng; Li, Jinmin; Liu, Zhongfan

2018-06-08

Single-crystalline GaN-based light-emitting diodes (LEDs) with high efficiency and long lifetime are the most promising solid-state lighting source compared with conventional incandescent and fluorescent lamps. However, the lattice and thermal mismatch between GaN and sapphire substrate always induces high stress and high density of dislocations and thus degrades the performance of LEDs. Here, the growth of high-quality GaN with low stress and a low density of dislocations on graphene (Gr) buffered sapphire substrate is reported for high-brightness blue LEDs. Gr films are directly grown on sapphire substrate to avoid the tedious transfer process and GaN is grown by metal-organic chemical vapor deposition (MOCVD). The introduced Gr buffer layer greatly releases biaxial stress and reduces the density of dislocations in GaN film and In x Ga 1- x N/GaN multiple quantum well structures. The as-fabricated LED devices therefore deliver much higher light output power compared to that on a bare sapphire substrate, which even outperforms the mature process derived counterpart. The GaN growth on Gr buffered sapphire only requires one-step growth, which largely shortens the MOCVD growth time. This facile strategy may pave a new way for applications of Gr films and bring several disruptive technologies for epitaxial growth of GaN film and its applications in high-brightness LEDs. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

A tunable lighting system integrated by inorganic and transparent organic light-emitting diodes

NASA Astrophysics Data System (ADS)

Zhang, Jing-jing; Zhang, Tao; Jin, Ya-fang; Liu, Shi-shen; Yuan, Shi-dong; Cui, Zhao; Zhang, Li; Wang, Wei-hui

2014-05-01

A tunable surface-emitting integrated lighting system is constructed using a combination of inorganic light-emitting diodes (LEDs) and transparent organic LEDs (OLEDs). An RB two-color LED is used to supply red and blue light emission, and a green organic LED is used to supply green light emission. Currents of the LED and OLED are tuned to produce a white color, showing different Commission Internationale d'Eclairage (CIE) chromaticity coordinates and correlated color temperatures with a wide adjustable range. Such an integration can compensate for the lack of the LED's luminance uniformity and the transparent OLED's luminance intensity.

Light-emitting diode street lights reduce last-ditch evasive manoeuvres by moths to bat echolocation calls

PubMed Central

Wakefield, Andrew; Stone, Emma L.; Jones, Gareth; Harris, Stephen

2015-01-01

The light-emitting diode (LED) street light market is expanding globally, and it is important to understand how LED lights affect wildlife populations. We compared evasive flight responses of moths to bat echolocation calls experimentally under LED-lit and -unlit conditions. Significantly, fewer moths performed ‘powerdive’ flight manoeuvres in response to bat calls (feeding buzz sequences from Nyctalus spp.) under an LED street light than in the dark. LED street lights reduce the anti-predator behaviour of moths, shifting the balance in favour of their predators, aerial hawking bats. PMID:26361558

Reduced-droop green III-nitride light-emitting diodes utilizing GaN tunnel junction

NASA Astrophysics Data System (ADS)

Alhassan, Abdullah I.; Young, Erin C.; Alyamani, Ahmed Y.; Albadri, Abdulrahman; Nakamura, Shuji; DenBaars, Steven P.; Speck, James S.

2018-04-01

We report the fabrication of low-droop high-efficiency green c-plane light-emitting diodes (LEDs) utilizing GaN tunnel junction (TJ) contacts. The LED epitaxial layers with a top p-GaN layer were grown by metal organic chemical vapor deposition and an n++-GaN layer was deposited by molecular beam epitaxy to form a TJ. The TJ LEDs were then compared with equivalent LEDs having a tin-doped indium oxide (ITO) contact. The TJ LEDs exhibited a higher performance and a lower efficiency droop than did the ITO LEDs. At 35 A/cm2, the external quantum efficiencies for the TJ and ITO LEDs were 31.2 and 27%, respectively.

High-Fluence Light-Emitting Diode-Generated Red Light Modulates the Transforming Growth Factor-Beta Pathway in Human Skin Fibroblasts.

PubMed

Mamalis, Andrew; Jagdeo, Jared

2018-05-24

Skin fibrosis is a significant medical problem with limited available treatment modalities. The key cellular characteristics include increased fibroblast proliferation, collagen production, and transforming growth factor-beta (TGF-B)/SMAD pathway signaling. The authors have previously shown that high-fluence light-emitting diode red light (HF-LED-RL) decreases cellular proliferation and collagen production. Herein, the authors investigate the ability of HF-LED-RL to modulate the TGF-B/SMAD pathway. Normal human dermal fibroblasts were cultured and irradiated with a commercially available hand-held LED array. After irradiation, cell lysates were collected and levels of pSMAD2, TGF-Beta 1, and TGF-Beta I receptor were measured using Western blot. High-fluence light-emitting diode red light decreased TGF-Beta 1 ligand (TGF-B1) levels after irradiation. 320 J/cm HF-LED-RL resulted in 59% TGF-B1 and 640 J/cm HF-LED-RL resulted in 54% TGF-B1, relative to controls. 640 J/cm HF-LED-RL resulted in 62% pSMAD2 0 hours after irradiation, 65% pSMAD2 2 hours after irradiation, and 95% 4 hours after irradiation, compared with matched controls. High-fluence light-emitting diode red light resulted in no significant difference in transforming growth factor-beta receptor I levels compared with matched controls. Skin fibrosis is a significant medical problem with limited available treatment modalities. Light-emitting diode-generated red light is a safe, economic, and noninvasive modality that has a body of in vitro evidence supporting the reduction of key cellular characteristics associated with skin fibrosis.

Photonics Research and Development

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dickson, Elizabeth

During the period August 2005 through October 2009, the UNLV Research Foundation (UNLVRF), a non-profit affiliate of the University of Nevada, Las Vegas (UNLV), in collaboration with UNLV's Colleges of Science and Engineering; Boston University (BU); Oak Ridge National Laboratory (ORNL); and Sunlight Direct, LLC, has managed and conducted a diverse and comprehensive research and development program focused on light-emitting diode (LED) technologies that provide significantly improved characteristics for lighting and display applications. This final technical report provides detailed information on the nature of the tasks, the results of the research, and the deliverables. It is estimated that about fivemore » percent of the energy used in the nation is for lighting homes, buildings and streets, accounting for some 25 percent of the average home's electric bill. However, the figure is significantly higher for the commercial sector. About 60 percent of the electricity for businesses is for lighting. Thus replacement of current lighting with solid-state lighting technology has the potential to significantly reduce this nation's energy consumption by some estimates, possibly as high as 20%. The primary objective of this multi-year R&D project has been to develop and advance lighting technologies to improve national energy conversion efficiencies; reduce heat load; and significantly lower the cost of conventional lighting technologies. The UNLVRF and its partners have specifically focused these talents on (1) improving LED technologies; (2) optimizing hybrid solar lighting, a technology which potentially offers the benefits of blending natural with artificial lighting systems, thus improving energy efficiency; and (3) building a comprehensive academic infrastructure within UNLV which concentrates on photonics R&D. Task researchers have reported impressive progress in (1) the development of quantum dot laser emitting diodes (QDLEDs) which will ultimately improve energy efficiency and lower costs for display and lighting applications (UNLV College of Engineering); (2) advancing green LED technology based on the Indium-Gallium-Nitride system (BU), thus improving conversion efficiencies; (3) employing unique state-of-the-art X-ray, electron and optical spectroscopies with microscopic techniques to learn more about the electronic structure of materials and contacts in LED devices (UNLV College of Science); (4) establishing a UNLV Display Lighting Laboratory staffed with a specialized team of academic researchers, students and industrial partners focused on identifying and implementing engineering solutions for lighting display-related problems; and (5) conducting research, development and demonstration for HSL essential to the resolution of technological barriers to commercialization.« less

Enhanced light extraction from a GaN-based green light-emitting diode with hemicylindrical linear grating structure.

PubMed

Jin, Yuanhao; Yang, Fenglei; Li, Qunqing; Zhu, Zhendong; Zhu, Jun; Fan, Shoushan

2012-07-02

Significant enhancement in the light output from GaN-based green light-emitting diodes (LEDs) was achieved with a hemicylindrical grating structure on the top layer of the diodes. The grating structure was first optimized by the finite-difference time-domain (FDTD) method, which showed that the profile of the grating structure was critical for light extraction efficiency. It was found that the transmission efficiency of the 530 nm light emitted from the inside of the GaN LED increased for incidence angles between 23.58° and 60°. Such a structure was fabricated by electron-beam lithography and an etching method. The light output power from the LED was increased approximately 4.7 times compared with that from a conventional LED. The structure optimization is the key to the great increase in transmission efficiency. Furthermore, the light emitted from the edge of the LED units could be collected and extracted by the grating structures in adjacent LED units, thus enhancing the performance of the whole LED chip.

Processing and characterization of high resolution GaN/InGaN LED arrays at 10 micron pitch for micro display applications

NASA Astrophysics Data System (ADS)

Dupré, Ludovic; Marra, Marjorie; Verney, Valentin; Aventurier, Bernard; Henry, Franck; Olivier, François; Tirano, Sauveur; Daami, Anis; Templier, François

2017-02-01

We report the fabrication process and characterization of high resolution 873 x 500 pixels emissive arrays based on blue or green GaN/InGaN light emitting diodes (LEDs) at a reduced pixel pitch of 10 μm. A self-aligned process along with a combination of damascene metallization steps is presented as the key to create a common cathode which is expected to provide good thermal dissipation and prevent voltage drops between center and side of the micro LED matrix. We will discuss the challenges of a self-aligned technology related to the choice of a good P contact metal and will present our solutions for the realization of the metallic interconnections between the GaN contacts and the higher levels of metallization at such a small pixel pitch. Enhanced control of each technological step allows scalability of the process up to 4 inch LED wafers and production of high quality LED arrays. The very high brightness (up to 107 cd.m-2) and good external quantum efficiency (EQE) of the resulting device make these kind of micro displays suitable for augmented reality or head up display applications.

Active Matrix OLED Test Report

NASA Technical Reports Server (NTRS)

Salazar, George

2013-01-01

This report focuses on the limited environmental testing of the AMOLED display performed as an engineering evaluation by The NASA Johnson Space Center (JSC)-specifically. EMI. Thermal Vac, and radiation tests. The AMOLED display is an active-matrix Organic Light Emitting Diode (OLED) technology. The testing provided an initial understanding of the technology and its suitability for space applications. Relative to light emitting diode (LED) displays or liquid crystal displays (LCDs), AMOLED displays provide a superior viewing experience even though they are much lighter and smaller, produce higher contrast ratio and richer colors, and require less power to operate than LCDs. However, AMOLED technology has not been demonstrated in a space environment. Therefore, some risks with the technology must be addressed before they can be seriously considered for human spaceflight. The environmental tests provided preliminary performance data on the ability of the display technology to handle some of the simulated induced space/spacecraft environments that an AMOLED display will see during a spacecraft certification test program. This engineering evaluation is part of a Space Act Agreement (SM) between The NASA/JSC and Honeywell International (HI) as a collaborative effort to evaluate the potential use of AMOLED technology for future human spaceflight missions- both government-led and commercial. Under this SM, HI is responsible for doing optical performance evaluation, as well as temperature and touch screen studies. The NASA/JSC is responsible for performing environmental testing comprised of EMI, Thermal Vac, and radiation tests. Additionally, as part of the testing, limited optical data was acquired to assess performance as the display was subjected to the induced environments. The NASA will benefit from this engineering evaluation by understanding AMOLED suitability for future use in space as well as becoming a smarter buyer (or developer) of the technology. HI benefits from the environmental testing results by understanding its performance limitations/shortcomings to improve subsequent generations of AMOLED technology. Note that the AMOLED used in this test was not deSigned for the space environment but rather for commercial/industrial terrestrial applications.

Effects of blue diode laser (445 nm) and LED (430-480 nm) radiant heat treatments on dental glass ionomer restoratives

NASA Astrophysics Data System (ADS)

Dionysopoulos, Dimitrios; Tolidis, Kosmas; Strakas, Dimitrios; Gerasimou, Paris; Sfeikos, Thrasyvoulos; Gutknecht, Norbert

2018-02-01

The purpose of this in vitro study was to evaluate the effect of two radiant heat treatments on water sorption, solubility and surface roughness of three conventional glass ionomer cements by using a blue diode laser (445 nm) and a light emitting diode (LED) unit (430-480 nm). Thirty disk-shaped specimens were prepared for each tested GIC (Equia Fil, Ketac Universal Aplicap and Riva Self Cure). The experimental groups (n = 10) of the study were as follows: Group 1 was the control group, in Group 2 the specimens were irradiated for 60 s at the top surface using a LED light-curing unit and in Group 3 the specimens were irradiated for 60 s at the top surface using a blue light diode laser. Statistical analysis was performed using one-way ANOVA and Tukey post hoc tests at a level of significance of a = 0.05. Radiant heat treatments with both laser and LED devices significantly decreased water sorption and solubility (p < 0.05) of most of the tested GICs. Blue diode laser treatment was seemed to be more effective compared to LED treatment for some of the tested materials. There were no changes in surface roughness of the GICs after the treatments (p > 0.05). Among the tested materials there were differences in water sorption and solubility (p < 0.05) but not in surface roughness (p > 0.05). The use of the blue diode laser for this radiant heat treatment was harmless for the surface of the tested GICs and may be advantageous for the longevity of their restorations.

Effects of light quality on the accumulation of phytochemicals in vegetables produced in controlled environments: a review.

PubMed

Bian, Zhong Hua; Yang, Qi Chang; Liu, Wen Ke

2015-03-30

Phytochemicals in vegetables are important for human health, and their biosynthesis, metabolism and accumulation are affected by environmental factors. Light condition (light quality, light intensity and photoperiod) is one of the most important environmental variables in regulating vegetable growth, development and phytochemical accumulation, particularly for vegetables produced in controlled environments. With the development of light-emitting diode (LED) technology, the regulation of light environments has become increasingly feasible for the provision of ideal light quality, intensity and photoperiod for protected facilities. In this review, the effects of light quality regulation on phytochemical accumulation in vegetables produced in controlled environments are identified, highlighting the research progress and advantages of LED technology as a light environment regulation tool for modifying phytochemical accumulation in vegetables. © 2014 Society of Chemical Industry.

Low-picomolar limits of detection using high-power light-emitting diodes for fluorescence.

PubMed

de Jong, Ebbing P; Lucy, Charles A

2006-05-01

Fluorescence detectors are ever more frequently being used with light-emitting diodes (LEDs) as the light source. Technological advances in the solid-state lighting industry have produced LEDs which are also suitable tools in analytical measurements. LEDs are now available which deliver 700 mW of radiometric power. While this greater light power can increase the fluorescence signal, it is not trivial to make proper use of this light. This new generation of LEDs has a large emitting area and a highly divergent beam. This presents a classic problem in optics where one must choose between either a small focused light spot, or high light collection efficiency. We have selected for light collection efficiency, which yields a light spot somewhat larger than the emitting area of the LED. This light is focused onto a flow cell. Increasing the detector cell internal diameter (i.d.) produces gains in (sensitivity)3. However, since the detector cell i.d. is smaller than the LED spot size, scattering of excitation light towards the detector remains a significant source of background signal. This can be minimized through the use of spectral filters and spatial filters in the form of pinholes. The detector produced a limit of detection (LOD) of 3 pM, which is roughly three orders of magnitude lower than other reports of LED-based fluorescence detectors. Furthermore, this LOD comes within a factor of six of much more expensive laser-based fluorescence systems. This detector has been used to monitor a separation from a gel filtration column of fluorescently labeled BSA from residual labeling reagent. The LOD of fluorescently labeled BSA is 25 pM.

ELiXIR—Solid-State Luminaire With Enhanced Light Extraction by Internal Reflection

NASA Astrophysics Data System (ADS)

Allen, Steven C.; Steckl, Andrew J.

2007-06-01

A phosphor-converted light-emitting diode (pcLED) luminaire featuring enhanced light extraction by internal reflection (ELiXIR) with efficacy of 60 lm/W producing 18 lumens of yellowish green light at 100 mA is presented. The luminaire consists of a commercial blue high power LED, a polymer hemispherical shell lens with interior phosphor coating, and planar aluminized reflector. High extraction efficiency of the phosphor-converted light is achieved by separating the phosphor from the LED and using internal reflection to steer the light away from lossy reflectors and the LED package and out of the device. At 10 and 500 mA, the luminaire produces 2.1 and 66 lumens with efficacies of 80 and 37 lm/W, respectively. Technological improvements over existing commercial LEDs, such as more efficient pcLED packages or, alternatively, higher efficiency green or yellow for color mixing, will be essential to achieving 150 200 lm/W solid-state lighting. Advances in both areas are demonstrated.

Thermal and optical design analyses, optimizations, and experimental verification for a novel glare-free LED lamp for household applications.

PubMed

Khan, M Nisa

2015-07-20

Light-emitting diode (LED) technologies are undergoing very fast developments to enable household lamp products with improved energy efficiency and lighting properties at lower cost. Although many LED replacement lamps are claimed to provide similar or better lighting quality at lower electrical wattage compared with general-purpose incumbent lamps, certain lighting characteristics important to human vision are neglected in this comparison, which include glare-free illumination and omnidirectional or sufficiently broad light distribution with adequate homogeneity. In this paper, we comprehensively investigate the thermal and lighting performance and trade-offs for several commercial LED replacement lamps for the most popular Edison incandescent bulb. We present simulations and analyses for thermal and optical performance trade-offs for various LED lamps at the chip and module granularity levels. In addition, we present a novel, glare-free, and production-friendly LED lamp design optimized to produce very desirable light distribution properties as demonstrated by our simulation results, some of which are verified by experiments.

Optogenetic activation of neocortical neurons in vivo with a sapphire-based micro-scale LED probe.

PubMed

McAlinden, Niall; Gu, Erdan; Dawson, Martin D; Sakata, Shuzo; Mathieson, Keith

2015-01-01

Optogenetics has proven to be a revolutionary technology in neuroscience and has advanced continuously over the past decade. However, optical stimulation technologies for in vivo need to be developed to match the advances in genetics and biochemistry that have driven this field. In particular, conventional approaches for in vivo optical illumination have a limitation on the achievable spatio-temporal resolution. Here we utilize a sapphire-based microscale gallium nitride light-emitting diode (μLED) probe to activate neocortical neurons in vivo. The probes were designed to contain independently controllable multiple μLEDs, emitting at 450 nm wavelength with an irradiance of up to 2 W/mm(2). Monte-Carlo stimulations predicted that optical stimulation using a μLED can modulate neural activity within a localized region. To validate this prediction, we tested this probe in the mouse neocortex that expressed channelrhodopsin-2 (ChR2) and compared the results with optical stimulation through a fiber at the cortical surface. We confirmed that both approaches reliably induced action potentials in cortical neurons and that the μLED probe evoked strong responses in deep neurons. Due to the possibility to integrate many optical stimulation sites onto a single shank, the μLED probe is thus a promising approach to control neurons locally in vivo.

Affordable underwater wireless optical communication using LEDs

NASA Astrophysics Data System (ADS)

Pilipenko, Vladimir; Arnon, Shlomi

2013-09-01

In recent years the need for high data rate underwater wireless communication (WC) has increased. Nowadays, the conventional technology for underwater communication is acoustic. However, the maximum data rate that acoustic technology can provide is a few kilobits per second. On the other hand, emerging applications such as underwater imaging, networks of sensors and swarms of underwater vehicles require much faster data rates. As a result, underwater optical WC, which can provide much higher data rates, has been proposed as an alternative means of communication. In addition to high data rates, affordable communication systems become an important feature in the development requirements. The outcome of these requirements is a new system design based on off-the-shelf components such as blue and green light emitting diodes (LEDs). This is due to the fact that LEDs offer solutions characterized by low cost, high efficiency, reliability and compactness. However, there are some challenges to be met when incorporating LEDs as part of the optical transmitter, such as low modulation rates and non linearity. In this paper, we review the main challenges facing the incorporation of LEDs as an integral part of underwater WC systems and propose some techniques to mitigate the LED limitations in order to achieve high data rate communication

Ultraviolet Light Emitting Diode Use in Advanced Oxidation Processes

DTIC Science & Technology

2014-03-27

or medium pressure mercury lamps , but UV light emitting diodes ( LEDs ) have the capacity to be used for water disinfection also. Traditional mercury...based upon the phosphors that are selected and used to coat the inside of the glass tube from which these lamps are produced. A UV LED is...Research has demonstrated the ability to use UV LEDs in place of mercury lamps to achieve the same 7 disinfection capacity, and limited research has

Frequency-Domain Optical Mammogram

DTIC Science & Technology

2002-10-01

have performed the proposed analysis of frequency-domain optical mammograms for a clinical population of about 150 patients. This analysis has led to...model the propagation of light in tissue14-20 have led to new approaches to optical mammography. As The authors are with the Department of Electrical...Modulation Methods, and Signal Detection /406 7.2.1 Lasers and arc lamps / 407’ 7.2.2 Pulsed sources / 407 7.2.3 Laser diodes and light-emitting diodes ( LEDs

Light Converting Inorganic Phosphors for White Light-Emitting Diodes

PubMed Central

Chen, Lei; Lin, Chun-Che; Yeh, Chiao-Wen; Liu, Ru-Shi

2010-01-01

White light-emitting diodes (WLEDs) have matched the emission efficiency of florescent lights and will rapidly spread as light source for homes and offices in the next 5 to 10 years. WLEDs provide a light element having a semiconductor light emitting layer (blue or near-ultraviolet (nUV) LEDs) and photoluminescence phosphors. These solid-state LED lamps, rather than organic light emitting diode (OLED) or polymer light-emitting diode (PLED), have a number of advantages over conventional incandescent bulbs and halogen lamps, such as high efficiency to convert electrical energy into light, reliability and long operating lifetime. To meet with the further requirement of high color rendering index, warm light with low color temperature, high thermal stability and higher energy efficiency for WLEDs, new phosphors that can absorb excitation energy from blue or nUV LEDs and generate visible emissions efficiently are desired. The criteria of choosing the best phosphors, for blue (450−480 nm) and nUV (380−400 nm) LEDs, strongly depends on the absorption and emission of the phosphors. Moreover, the balance of light between the emission from blue-nUV LEDs and the emissions from phosphors (such as yellow from Y3Al5O12:Ce3+) is important to obtain white light with proper color rendering index and color temperature. Here, we will review the status of phosphors for LEDs and prospect the future development.

Airborne laser-diode-array illuminator assessment for the night vision's airborne mine-detection arid test

NASA Astrophysics Data System (ADS)

Stetson, Suzanne; Weber, Hadley; Crosby, Frank J.; Tinsley, Kenneth; Kloess, Edmund; Nevis, Andrew J.; Holloway, John H., Jr.; Witherspoon, Ned H.

2004-09-01

The Airborne Littoral Reconnaissance Technologies (ALRT) project has developed and tested a nighttime operational minefield detection capability using commercial off-the-shelf high-power Laser Diode Arrays (LDAs). The Coastal System Station"s ALRT project, under funding from the Office of Naval Research (ONR), has been designing, developing, integrating, and testing commercial arrays using a Cessna airborne platform over the last several years. This has led to the development of the Airborne Laser Diode Array Illuminator wide field-of-view (ALDAI-W) imaging test bed system. The ALRT project tested ALDAI-W at the Army"s Night Vision Lab"s Airborne Mine Detection Arid Test. By participating in Night Vision"s test, ALRT was able to collect initial prototype nighttime operational data using ALDAI-W, showing impressive results and pioneering the way for final test bed demonstration conducted in September 2003. This paper describes the ALDAI-W Arid Test and results, along with processing steps used to generate imagery.

On the design of GaN vertical MESFETs on commercial LED sapphire wafers

NASA Astrophysics Data System (ADS)

Atalla, Mahmoud R. M.; Noor Elahi, Asim M.; Mo, Chen; Jiang, Zhenyu; Liu, Jie; Ashok, S.; Xu, Jian

2016-12-01

Design of GaN-based vertical metal-semiconductor field-effect transistors (MESFETs) on commercial light-emitting-diode (LED) epi-wafers has been proposed and proof of principle devices have been fabricated. In order to better understand the IV curves, these devices have been simulated using the charge transport model. It was found that shrinking the drain pillar size would significantly help in reaching cut-off at much lower gate bias even at high carrier concentration of unintentionally doped GaN and considerable leakage current caused by the Schottky barrier lowering. The realization of these vertical MESFETs on LED wafers would allow their chip-level integration. This would open a way to many intelligent lighting applications like on-chip current regulator and signal regulation/communication in display technology.

Evaluation of light extraction efficiency for the light-emitting diodes based on the transfer matrix formalism and ray-tracing method

NASA Astrophysics Data System (ADS)

Pingbo, An; Li, Wang; Hongxi, Lu; Zhiguo, Yu; Lei, Liu; Xin, Xi; Lixia, Zhao; Junxi, Wang; Jinmin, Li

2016-06-01

The internal quantum efficiency (IQE) of the light-emitting diodes can be calculated by the ratio of the external quantum efficiency (EQE) and the light extraction efficiency (LEE). The EQE can be measured experimentally, but the LEE is difficult to calculate due to the complicated LED structures. In this work, a model was established to calculate the LEE by combining the transfer matrix formalism and an in-plane ray tracing method. With the calculated LEE, the IQE was determined and made a good agreement with that obtained by the ABC model and temperature-dependent photoluminescence method. The proposed method makes the determination of the IQE more practical and conventional. Project supported by the National Natural Science Foundation of China (Nos.11574306, 61334009), the China International Science and Technology Cooperation Program (No. 2014DFG62280), and the National High Technology Program of China (No. 2015AA03A101).

Development of Radiation-Resistant In-Water Wireless Transmission System Using Light Emitting Diodes and Photo Diodes

NASA Astrophysics Data System (ADS)

Takeuchi, T.; Shibata, H.; Otsuka, N.; Uehara, T.; Tsuchiya, K.; Shibagaki, T.; Komanome, H.

2016-10-01

Several kinds of commercially available light emitting diodes (LED) and photo diodes (PD) were irradiated with 60Co gamma ray up to 1 MGy for development of a radiation-resistant in-water wireless transmission system using visible light. The lens parts of the LEDs turned brown by the irradiation and their colors became dark with the absorbed dose. The total luminous fluxes decreased with the absorbed dose and the LED with shorter emission wavelength had the higher decrease rate. Meanwhile, the current-voltage characteristics hardly changed. These results indicate that the decreases of the total luminous flux of the LEDs were mainly caused not by the degradation of the semiconductor parts but by the coloring of the lens parts by the irradiation. On the other hand, the light sensitivities of the PDs decreased with the absorbed dose. The PDs with the window part which turned a darker color had the higher decrease rate. These results indicate that the decreases of light sensitivities of the PDs were also mainly caused by the coloring of the resin parts by the irradiation. If the wireless transmission is performed using the candidate LED and PD between 5 meters in water, using a few LEDs and PDs, the PD's output current generated by the emission light of the LED is estimated to be detectable even considering the effects of the absorption of the light in water and the increased dark current by the irradiation. Therefore, a radiation resistant in-water transmission system can be constructed using commercially available LEDs and PDs in principle.

Near-ultraviolet light-emitting diodes with transparent conducting layer of gold-doped multi-layer graphene

NASA Astrophysics Data System (ADS)

Cho, Chu-Young; Choe, Minhyeok; Lee, Sang-Jun; Hong, Sang-Hyun; Lee, Takhee; Lim, Wantae; Kim, Sung-Tae; Park, Seong-Ju

2013-03-01

We report on gold (Au)-doped multi-layer graphene (MLG), which can be used as a transparent conducting layer in near-ultraviolet light-emitting diodes (NUV-LEDs). The optical output power of NUV-LEDs with thermally annealed Au-doped MLG was increased by 34% compared with that of NUV-LEDs with a bare MLG. This result is attributed to the reduced sheet resistance and the enhanced current injection efficiency of NUV-LEDs by the thermally annealed Au-doped MLG film, which shows high transmittance in NUV and UV regions and good adhesion of Au-doped MLG on p-GaN layer of NUV-LEDs.

Poly (p-phenyleneneacetylene) light-emitting diodes

DOEpatents

Shinar, Joseph; Swanson, Leland S.; Lu, Feng; Ding, Yiwei; Barton, Thomas J.; Vardeny, Zeev V.

1994-10-04

Acetylene containing poly(p-phenyleneacetylene) (PPA) - based light-emitting diodes (LEDs) are provided. The LEDs are fabricated by coating a hole-injecting electrode, preferably an indium tin oxide (ITO) coated glass substrate, with a PPA polymer, such as a 2,5-dibutoxy or a 2,5-dihexoxy derivative of PPA, dissolved in an organic solvent. This is then followed by evaporating a layer of material capable of injecting electrons, such as Al or Al/Ca, onto the polymer to form a base electrode. This composition is then annealed to form efficient EL diodes.

Poly (p-phenyleneacetylene) light-emitting diodes

DOEpatents

Shinar, J.; Swanson, L.S.; Lu, F.; Ding, Y.; Barton, T.J.; Vardeny, Z.V.

1994-10-04

Acetylene containing poly(p-phenyleneacetylene) (PPA) - based light-emitting diodes (LEDs) are provided. The LEDs are fabricated by coating a hole-injecting electrode, preferably an indium tin oxide (ITO) coated glass substrate, with a PPA polymer, such as a 2,5-dibutoxy or a 2,5-dihexoxy derivative of PPA, dissolved in an organic solvent. This is then followed by evaporating a layer of material capable of injecting electrons, such as Al or Al/Ca, onto the polymer to form a base electrode. This composition is then annealed to form efficient EL diodes. 8 figs.

Fabrication of poly(p-phenyleneacetylene) light-emitting diodes

DOEpatents

Shinar, J.; Swanson, L.S.; Lu, F.; Ding, Y.

1994-08-02

Acetylene-containing poly(p-phenyleneacetylene) (PPA)-based light-emitting diodes (LEDs) are provided. The LEDs are fabricated by coating a hole-injecting electrode, preferably an indium tin oxide (ITO) coated glass substrate, with a PPA polymer, such as a 2,5-dibutoxy or a 2,5-dihexoxy derivative of PPA, dissolved in an organic solvent. This is then followed by evaporating a layer of material capable of injecting electrons, such as Al or Al/Ca, onto the polymer to form a base electrode. This composition is then annealed to form efficient EL diodes. 8 figs.

Fabrication of poly(p-phenyleneacetylene) light-emitting diodes

DOEpatents

Shinar, Joseph; Swanson, Leland S.; Lu, Feng; Ding, Yiwei

1994-08-02

Acetylene containing poly(p-phenyleneacetylene) (PPA) - based light-emitting diodes (LEDs) are provided. The LEDs are fabricated by coating a hole-injecting electrode, preferably an indium tin oxide (ITO) coated glass substrate, with a PPA polymer, such as a 2,5-dibutoxy or a 2,5-dihexoxy derivative of PPA, dissolved in an organic solvent. This is then followed by evaporating a layer of material capable of injecting electrons, such as A1 or A1/Ca, onto the polymer to form a base electrode. This composition is then annealed to form efficient EL diodes.

Rational growth of branched nanowire heterostructures with synthetically encoded properties and function

PubMed Central

Jiang, Xiaocheng; Tian, Bozhi; Xiang, Jie; Qian, Fang; Zheng, Gengfeng; Wang, Hongtao; Mai, Liqiang; Lieber, Charles M.

2011-01-01

Branched nanostructures represent unique, 3D building blocks for the “bottom-up” paradigm of nanoscale science and technology. Here, we report a rational, multistep approach toward the general synthesis of 3D branched nanowire (NW) heterostructures. Single-crystalline semiconductor, including groups IV, III–V, and II–VI, and metal branches have been selectively grown on core or core/shell NW backbones, with the composition, morphology, and doping of core (core/shell) NWs and branch NWs well controlled during synthesis. Measurements made on the different composition branched NW structures demonstrate encoding of functional p-type/n-type diodes and light-emitting diodes (LEDs) as well as field effect transistors with device function localized at the branch/backbone NW junctions. In addition, multibranch/backbone NW structures were synthesized and used to demonstrate capability to create addressable nanoscale LED arrays, logic circuits, and biological sensors. Our work demonstrates a previously undescribed level of structural and functional complexity in NW materials, and more generally, highlights the potential of bottom-up synthesis to yield increasingly complex functional systems in the future. PMID:21730174

Light-Emitting Diodes: A Hidden Treasure

ERIC Educational Resources Information Center

Planinšic, Gorazd; Etkina, Eugenia

2014-01-01

LEDs, or light-emitting diodes, are cheap, easy to purchase, and thus commonly used in physics instruction as indicators of electric current or as sources of light (Fig. 1). In our opinion LEDs represent a unique piece of equipment that can be used to collect experimental evidence, and construct and test new ideas in almost every unit of a general…

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wilkerson, Andrea M.; McCullough, Jeffrey J.

The Yuma Sector Border Patrol Area is a high flux lighting application in a high temperature environment, presenting a formidable challenge for light-emitting diodes (LEDs). This retrofit is an Energy Savings Performance Contract ENABLE project under the U.S. Department of Energy (DOE) Federal Energy Management Program. If high flux LED technology performs well in a region with high ambient temperature and solar radiation, it can perform well in most outdoor environments. The design process for the Yuma retrofit has already provided valuable knowledge to CBP and DOE. The LED lighting system selected for the retrofit is expected to reduce energymore » consumption 69% compared to the incumbent quartz metal halide (QMH) lighting system. If the LED lighting system is installed, GATEWAY will continue to document and disseminate information regarding the installation and long-term performance so that others may also gain valuable knowledge from the Yuma Sector Border Patrol Area lighting retrofit.« less

Benefit from NASA

NASA Image and Video Library

1999-01-01

The red light from the Light Emitting Diode (LED) probe shines through the fingers of Dr. Harry Whelan, a pediatric neurologist at the Children's Hospital of Wisconsin in Milwaukee. Dr. Whelan uses the long waves of light from the LED surgical probe to activate special drugs that kill brain tumors. Laser light previously has been used for this type of surgery, but the LED light illuminates through all nearby tissues, reaching parts of tumors that shorter wavelengths of laser light carnot. The new probe is safer because the longer wavelengths of light are cooler than the shorter wavelengths of laser light, making the LED less likely to injure normal brain tissue near the tumor. Also, it can be used for hours at a time while still remaining cool to the touch. The probe was developed for photodynamic cancer therapy under a NASA Small Business Innovative Research Program grant. The program is part of NASA's Technology Transfer Department at the Marshall Space Flight Center.

Self-aligning LED-based optical link

NASA Astrophysics Data System (ADS)

Shen, Thomas C.; Drost, Robert J.; Rzasa, John R.; Sadler, Brian M.; Davis, Christopher C.

2016-09-01

The steady advances in light-emitting diode (LED) technology have motivated the use of LEDs in optical wireless communication (OWC) applications such as indoor local area networks (LANs) and communication between mobile platforms (e.g., robots, vehicles). In contrast to traditional radio frequency (RF) wireless communication, OWC utilizes electromagnetic spectrum that is largely unregulated and unrestricted. OWC communication may be especially useful in RF-denied environments, in which RF communication may be prohibited or undesirable. However, OWC does present some challenges, including the need to maintain alignment between potentially moving nodes. We describe a novel system for link alignment that is composed of a hyperboloidal mirror, camera, and gimbal. The experimental system is able to use the mirror and camera to detect an LED beacon of a neighboring node and estimate its bearing (azimuth and elevation), point the gimbal towards the beacon, and establish an optical link.

LEDs as light source: examining quality of acquired images

NASA Astrophysics Data System (ADS)

Bachnak, Rafic; Funtanilla, Jeng; Hernandez, Jose

2004-05-01

Recent advances in technology have made light emitting diodes (LEDs) viable in a number of applications, including vehicle stoplights, traffic lights, machine-vision-inspection, illumination, and street signs. This paper presents the results of comparing images taken by a videoscope using two different light sources. One of the sources is the internal metal halide lamp and the other is a LED placed at the tip of the insertion tube. Images acquired using these two light sources were quantitatively compared using their histogram, intensity profile along a line segment, and edge detection. Also, images were qualitatively compared using image registration and transformation. The gray-level histogram, edge detection, image profile and image registration do not offer conclusive results. The LED light source, however, produces good images for visual inspection by an operator. The paper will present the results and discuss the usefulness and shortcomings of various comparison methods.

Light-extraction efficiency and forward voltage in GaN-based light-emitting diodes with different patterns of V-shaped pits

NASA Astrophysics Data System (ADS)

Wang, Min-Shuai; Huang, Xiao-Jing

2013-08-01

We present a new method of making a textured V-pit surface for improving the light extraction efficiency in GaN-based light-emitting diodes and compare it with the usual low-temperature method for p-GaN V-pits. Three types of GaN-based light-emitting diodes (LEDs) with surface V-pits in different densities and regions were grown by metal—organic chemical vapor deposition. We achieved the highest output power and lowest forward voltage values with the p-InGaN V-pit LED. The V-pits enhanced the light output power values by 1.45 times the values of the conventional LED owing to an enhancement of the light scattering probability and an effective reduction of Mg-acceptor activation energy. Moreover, this new technique effectively solved the higher forward voltage problem of the usual V-pit LED.

Recent developments in white light emitting diodes

NASA Astrophysics Data System (ADS)

Lohe, P. P.; Nandanwar, D. V.; Belsare, P. D.; Moharil, S. V.

2018-05-01

In the recent years solid state lighting based on LEDs has revolutionized lighting technology. LEDs have many advantages over the conventional lighting based on fluorescent and incandescent lamps such as mercury free, high conversion efficiency of electrical energy into light, long lifetime reliability and ability to use with many types of devices. LEDs have emerged as a new potentially revolutionary technology that could save up to half of energy used for lighting applications. White LEDs would be the most important light source in the future, so much so that this aspect had been highlighted by the Nobel committee during the award of 2014 Nobel Prize for Physics. Recent advancement in the fabrication of GaN chip capable of emitting in blue and near UV region paved way for fabrication of white LED lamps. Mainly there are two approaches used for preparing white emitting solid state lamp. In the first approach blue light (λ=450 nm) emitted from the InGaN LED chip is partially absorbed by the YAG:Ce3+ phosphor coated on it and re-emitted as yellow fluorescence. A white light can be generated by the combination of blue + yellow emission bands. These lamps are already available. But they are suffering from major drawback that their Colour Rendering Index (CRI) is low. In the second approach, white LEDs are made by coating near ultraviolet emitting (360 to 410nm) LED with a mixture of high efficiency red, green and blue emitting phosphors, analogous to the fluorescent lamp. This method yields lamps with better color rendition. Addition of a yellow emitting phosphor improves CRI further. However conversion efficiency is compromised to some extent. Further the cost of near UV emitting chip is very high compared to blue emitting chips. Thus cost and light output wise, near UV chips are much inferior to blue chips. Recently some rare earth activated oxynitrides, silicates, fluorides have emerged as an important family of luminescent materials for white LED application because they can emit visible light strongly under blue light irradiation. These are chemically, thermally and mechanically stable materials with high efficiency to down convert blue radiation into green and red. Efficient white light can be generated by coating these phosphors on blue LED.CRI of white emitting LED lamp can be improved significantly if green and red emitting phosphors are coated on efficient blue emitting LED chips. In this approach CRI will be maintained if appropriate combination of red, green along with blue emission is used. This article reviews some recent developments in phosphors for white light emitting diodes.

LEDs for Efficient Energy

ERIC Educational Resources Information Center

Guerin, David A.

1978-01-01

Light-emitting diodes (LEDs) are described and three classroom experiments are given, one to prove the, low power requirements and efficiency of LEDs, an LED on-off detector circuit, and the third an LED photoelectric smoke detector. (BB)

Color speckle in laser displays

NASA Astrophysics Data System (ADS)

Kuroda, Kazuo

2015-07-01

At the beginning of this century, lighting technology has been shifted from discharge lamps, fluorescent lamps and electric bulbs to solid-state lighting. Current solid-state lighting is based on the light emitting diodes (LED) technology, but the laser lighting technology is developing rapidly, such as, laser cinema projectors, laser TVs, laser head-up displays, laser head mounted displays, and laser headlamps for motor vehicles. One of the main issues of laser displays is the reduction of speckle noise1). For the monochromatic laser light, speckle is random interference pattern on the image plane (retina for human observer). For laser displays, RGB (red-green-blue) lasers form speckle patterns independently, which results in random distribution of chromaticity, called color speckle2).

Efficient Flexible Organic/Inorganic Hybrid Perovskite Light-Emitting Diodes Based on Graphene Anode.

PubMed

Seo, Hong-Kyu; Kim, Hobeom; Lee, Jaeho; Park, Min-Ho; Jeong, Su-Hun; Kim, Young-Hoon; Kwon, Sung-Joo; Han, Tae-Hee; Yoo, Seunghyup; Lee, Tae-Woo

2017-03-01

Highly efficient organic/inorganic hybrid perovskite light-emitting diodes (PeLEDs) based on graphene anode are developed for the first time. Chemically inert graphene avoids quenching of excitons by diffused metal atom species from indium tin oxide. The flexible PeLEDs with graphene anode on plastic substrate show good bending stability; they provide an alternative and reliable flexible electrode for highly efficient flexible PeLEDs. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Direct Growth of III-Nitride Nanowire-Based Yellow Light-Emitting Diode on Amorphous Quartz Using Thin Ti Interlayer

NASA Astrophysics Data System (ADS)

Prabaswara, Aditya; Min, Jung-Wook; Zhao, Chao; Janjua, Bilal; Zhang, Daliang; Albadri, Abdulrahman M.; Alyamani, Ahmed Y.; Ng, Tien Khee; Ooi, Boon S.

2018-02-01

Consumer electronics have increasingly relied on ultra-thin glass screen due to its transparency, scalability, and cost. In particular, display technology relies on integrating light-emitting diodes with display panel as a source for backlighting. In this study, we undertook the challenge of integrating light emitters onto amorphous quartz by demonstrating the direct growth and fabrication of a III-nitride nanowire-based light-emitting diode. The proof-of-concept device exhibits a low turn-on voltage of 2.6 V, on an amorphous quartz substrate. We achieved 40% transparency across the visible wavelength while maintaining electrical conductivity by employing a TiN/Ti interlayer on quartz as a translucent conducting layer. The nanowire-on-quartz LED emits a broad linewidth spectrum of light centered at true yellow color ( 590 nm), an important wavelength bridging the green-gap in solid-state lighting technology, with significantly less strain and dislocations compared to conventional planar quantum well nitride structures. Our endeavor highlighted the feasibility of fabricating III-nitride optoelectronic device on a scalable amorphous substrate through facile growth and fabrication steps. For practical demonstration, we demonstrated tunable correlated color temperature white light, leveraging on the broadly tunable nanowire spectral characteristics across red-amber-yellow color regime.

Direct Growth of III-Nitride Nanowire-Based Yellow Light-Emitting Diode on Amorphous Quartz Using Thin Ti Interlayer.

PubMed

Prabaswara, Aditya; Min, Jung-Wook; Zhao, Chao; Janjua, Bilal; Zhang, Daliang; Albadri, Abdulrahman M; Alyamani, Ahmed Y; Ng, Tien Khee; Ooi, Boon S

2018-02-06

Consumer electronics have increasingly relied on ultra-thin glass screen due to its transparency, scalability, and cost. In particular, display technology relies on integrating light-emitting diodes with display panel as a source for backlighting. In this study, we undertook the challenge of integrating light emitters onto amorphous quartz by demonstrating the direct growth and fabrication of a III-nitride nanowire-based light-emitting diode. The proof-of-concept device exhibits a low turn-on voltage of 2.6 V, on an amorphous quartz substrate. We achieved ~ 40% transparency across the visible wavelength while maintaining electrical conductivity by employing a TiN/Ti interlayer on quartz as a translucent conducting layer. The nanowire-on-quartz LED emits a broad linewidth spectrum of light centered at true yellow color (~ 590 nm), an important wavelength bridging the green-gap in solid-state lighting technology, with significantly less strain and dislocations compared to conventional planar quantum well nitride structures. Our endeavor highlighted the feasibility of fabricating III-nitride optoelectronic device on a scalable amorphous substrate through facile growth and fabrication steps. For practical demonstration, we demonstrated tunable correlated color temperature white light, leveraging on the broadly tunable nanowire spectral characteristics across red-amber-yellow color regime.

AlGaInP light-emitting diodes with SACNTs as current-spreading layer

PubMed Central

2014-01-01

Transparent conductive current-spreading layer is important for quantum efficiency and thermal performance of light-emitting diodes (LEDs). The increasing demand for tin-doped indium oxide (ITO) caused the price to greatly increase. Super-aligned carbon nanotubes (SACNTs) and Au-coated SACNTs as current-spreading layer were applied on AlGaInP LEDs. The LEDs with Au-coated SACNTs showed good current spreading effect. The voltage bias at 20 mA dropped about 0.15 V, and the optical power increased about 10% compared with the LEDs without SACNTs. PMID:24712527

Baker-Barry Tunnel Lighting: Evaluation of a Potential GATEWAY Demonstrations Project

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tuenge, Jason R.

2011-06-01

The U.S. Department of Energy (DOE) is evaluating the Baker-Barry Tunnel as a potential GATEWAY Demonstrations project for deployment of solid-state lighting (SSL) technology. The National Park Service (NPS) views this project as a possible proving ground and template for implementation of light-emitting diode (LED) luminaires in other NPS tunnels, thereby expanding the estimated 40% energy savings from 132 MWh/yr for this tunnel to a much larger figure national

Long-range high-speed visible light communication system over 100-m outdoor transmission utilizing receiver diversity technology

NASA Astrophysics Data System (ADS)

Wang, Yiguang; Huang, Xingxing; Shi, Jianyang; Wang, Yuan-quan; Chi, Nan

2016-05-01

Visible light communication (VLC) has no doubt become a promising candidate for future wireless communications due to the increasing trends in the usage of light-emitting diodes (LEDs). In addition to indoor high-speed wireless access and positioning applications, VLC usage in outdoor scenarios, such as vehicle networks and intelligent transportation systems, are also attracting significant interest. However, the complex outdoor environment and ambient noise are the key challenges for long-range high-speed VLC outdoor applications. To improve system performance and transmission distance, we propose to use receiver diversity technology in an outdoor VLC system. Maximal ratio combining-based receiver diversity technology is utilized in two receivers to achieve the maximal signal-to-noise ratio. A 400-Mb/s VLC transmission using a phosphor-based white LED and a 1-Gb/s wavelength division multiplexing VLC transmission using a red-green-blue LED are both successfully achieved over a 100-m outdoor distance with the bit error rate below the 7% forward error correction limit of 3.8×10-3. To the best of our knowledge, this is the highest data rate at 100-m outdoor VLC transmission ever achieved. The experimental results clearly prove the benefit and feasibility of receiver diversity technology for long-range high-speed outdoor VLC systems.

Doping concentration effect on performance of single QW double-heterostructure InGaN/AlGaN light emitting diode

NASA Astrophysics Data System (ADS)

Halim, N. Syafira Abdul; Wahid, M. Halim A.; Hambali, N. Azura M. Ahmad; Rashid, Shanise; Shahimin, Mukhzeer M.

2017-11-01

Light emitting diode (LED) employed a numerous applications such as displaying information, communication, sensing, illumination and lighting. In this paper, InGaN/AlGaN based on one quantum well (1QW) light emitting diode (LED) is modeled and studied numerically by using COMSOL Multiphysics 5.1 version. We have selected In0.06Ga0.94N as the active layer with thickness 50nm sandwiched between 0.15μm thick layers of p and n-type Al0.15Ga0.85N of cladding layers. We investigated an effect of doping concentration on InGaN/AlGaN double heterostructure of light-emitting diode (LED). Thus, energy levels, carrier concentration, electron concentration and forward voltage (IV) are extracted from the simulation results. As the doping concentration is increasing, the performance of threshold voltage, Vth on one quantum well (1QW) is also increases from 2.8V to 3.1V.

Antibacterial effect of 405±5nm light emitting diode illumination against Escherichia coli O157:H7, Listeria monocytogenes, and Salmonella on the surface of fresh-cut mango and its influence on fruit quality.

PubMed

Kim, Min-Jeong; Tang, Chee Hwa; Bang, Woo Suk; Yuk, Hyun-Gyun

2017-03-06

To investigate a potential of 405±5nm light emitting diode (LED) as a novel technology for food preservation, the antibacterial effect of 405±5nm LED on Escherichia coli O157:H7, Listeria monocytogenes, and Salmonella spp. on the surface of fresh-cut mango and its influence on fruit quality were evaluated at different storage temperatures. LED-illumination inactivated 1.0-1.6 logCFU/cm 2 of populations at 4 and 10°C for 36-48h (total dose, 2.6-3.5kJ/cm 2 ) regardless of bacterial species, while those on non-illuminated mange remained unchanged or slightly increased during storage. At 20°C for 24h (total dose, 1.7kJ/cm 2 ), non-illuminated E. coli O157:H7 and Salmonella gradually grew, whereas LED-illumination reduced 1.2 log of Salmonella and inhibited the growth of E. coli O157:H7. Unlike these, non-illuminated L. monocytogenes cells rapidly increased to 7.3 log, while illuminated cells reached 4.6 log, revealing that LED-illumination delayed their growth. There were no significant (P>0.05) differences in color, antioxidant capacity, ascorbic acid, β-carotene, and flavonoid between non-illuminated and illuminated cut mangoes, regardless of storage temperature. These results suggest that 405±5nm LEDs in combination with chilling temperatures could be applied to preserve fresh-cut fruits without deterioration of physicochemical quality of fruits at food establishments, minimizing the risk of foodborne disease. Copyright © 2017 Elsevier B.V. All rights reserved.

Micro-light-emitting diodes with III-nitride tunnel junction contacts grown by metalorganic chemical vapor deposition

NASA Astrophysics Data System (ADS)

Hwang, David; Mughal, Asad J.; Wong, Matthew S.; Alhassan, Abdullah I.; Nakamura, Shuji; DenBaars, Steven P.

2018-01-01

Micro-light-emitting diodes (µLEDs) with tunnel junction (TJ) contacts were grown entirely by metalorganic chemical vapor deposition. A LED structure was grown, treated with UV ozone and hydrofluoric acid, and reloaded into the reactor for TJ regrowth. The silicon doping level of the n++-GaN TJ was varied to examine its effect on voltage. µLEDs from 2.5 × 10-5 to 0.01 mm2 in area were processed, and the voltage penalty of the TJ for the smallest µLED at 20 A/cm2 was 0.60 V relative to that for a standard LED with indium tin oxide. The peak external quantum efficiency of the TJ LED was 34%.

The Light-Emitting Diode as a Light Detector

ERIC Educational Resources Information Center

Baird, William H.; Hack, W. Nathan; Tran, Kiet; Vira, Zeeshan; Pickett, Matthew

2011-01-01

A light-emitting diode (LED) and operational amplifier can be used as an affordable method to provide a digital output indicating detection of an intense light source such as a laser beam or high-output LED. When coupled with a microcontroller, the combination can be used as a multiple photogate and timer for under $50. A similar circuit is used…

Light Emitting Diode Flashlights as Effective and Inexpensive Light Sources for Fluorescence Microscopy

PubMed Central

Robertson, J. Brian; Zhang, Yunfei; Johnson, Carl Hirschie

2009-01-01

Summary Light-emitting diodes (LEDs) are becoming more commonly used as light sources for fluorescence microscopy. We describe the adaptation of a commercially available LED flashlight for use as a source for fluorescence excitation. This light source is long-lived, inexpensive, and is effective for excitation in the range of 440–600 nm. PMID:19772530

Light emitting diode package element with internal meniscus for bubble free lens placement

DOEpatents

Tarsa, Eric; Yuan, Thomas C.; Becerra, Maryanne; Yadev, Praveen

2010-09-28

A method for fabricating a light emitting diode (LED) package comprising providing an LED chip and covering at least part of the LED chip with a liquid encapsulant having a radius of curvature. An optical element is provided having a bottom surface with at least a portion having a radius of curvature larger than the liquid encapsulant. The larger radius of curvature portion of the optical element is brought into contact with the liquid encapsulant. The optical element is then moved closer to the LED chip, growing the contact area between said optical element and said liquid encapsulant. The liquid encapsulant is then cured. A light emitting diode comprising a substrate with an LED chip mounted to it. A meniscus ring is on the substrate around the LED chip with the meniscus ring having a meniscus holding feature. An inner encapsulant is provided over the LED chip with the inner encapsulant having a contacting surface on the substrate, with the meniscus holding feature which defines the edge of the contacting surface. An optical element is included having a bottom surface with at least a portion that is concave. The optical element is arranged on the substrate with the concave portion over the LED chip. A contacting encapsulant is included between the inner encapsulant and optical element.

Digital LED Pixels: Instructions for use and a characterization of their properties.

PubMed

Jones, Pete R; Garcia, Sara E; Nardini, Marko

2016-12-01

This article details how to control light emitting diodes (LEDs) using an ordinary desktop computer. By combining digitally addressable LEDs with an off-the-shelf microcontroller (Arduino), multiple LEDs can be controlled independently and with a high degree of temporal, chromatic, and luminance precision. The proposed solution is safe (can be powered by a 5-V battery), tested (has been used in published research), inexpensive (∼ $60 + $2 per LED), highly interoperable (can be controlled by any type of computer/operating system via a USB or Bluetooth connection), requires no prior knowledge of electrical engineering (components simply require plugging together), and uses widely available components for which established help forums already exist. Matlab code is provided, including a 'minimal working example' of use suitable for use by beginners. Properties of the recommended LEDs are also characterized, including their response time, luminance profile, and color gamut. Based on these, it is shown that the LEDs are highly stable in terms of both luminance and chromaticity, and do not suffer from issues of warm-up, chromatic shift, and slow response times associated with traditional CRT and LCD monitor technology.

Design, fabrication, and packaging of an integrated, wirelessly-powered optrode array for optogenetics application

PubMed Central

Kwon, Ki Yong; Lee, Hyung-Min; Ghovanloo, Maysam; Weber, Arthur; Li, Wen

2015-01-01

The recent development of optogenetics has created an increased demand for advancing engineering tools for optical modulation of neural circuitry. This paper details the design, fabrication, integration, and packaging procedures of a wirelessly-powered, light emitting diode (LED) coupled optrode neural interface for optogenetic studies. The LED-coupled optrode array employs microscale LED (μLED) chips and polymer-based microwaveguides to deliver light into multi-level cortical networks, coupled with microelectrodes to record spontaneous changes in neural activity. An integrated, implantable, switched-capacitor based stimulator (SCS) system provides high instantaneous power to the μLEDs through an inductive link to emit sufficient light and evoke neural activities. The presented system is mechanically flexible, biocompatible, miniaturized, and lightweight, suitable for chronic implantation in small freely behaving animals. The design of this system is scalable and its manufacturing is cost effective through batch fabrication using microelectromechanical systems (MEMS) technology. It can be adopted by other groups and customized for specific needs of individual experiments. PMID:25999823

Assessment of end-of-life design in solid-state lighting

NASA Astrophysics Data System (ADS)

Dzombak, Rachel; Padon, Jack; Salsbury, Josh; Dillon, Heather

2017-08-01

Consumers in the US market and across the globe are beginning to widely adopt light emitting diode (LED) lighting products while the technology continues to undergo significant changes. While LED products are evolving to consume less energy, they are also more complex than traditional lighting products with a higher number of parts and a larger number of electronic components. Enthusiasm around the efficiency and long expected life span of LED lighting products is valid, but research to optimize product characteristics and design is needed. This study seeks to address that gap by characterizing LED lighting products' suitability for end of life (EOL) recycling and disposal. The authors disassembled and assessed 17 different lighting products to understand how designs differ between brands and manufacture year. Products were evaluated based on six parameters to quantify the design. The analysis indicates that while the efficiency of LED products has improved dramatically in the recent past, product designers and manufacturers could incorporate design strategies to improve environmental performance of lighting products at end-of-life.

Angular color uniformity enhancement of white light-emitting diodes integrated with freeform lenses.

PubMed

Wang, Kai; Wu, Dan; Chen, Fei; Liu, Zongyuan; Luo, Xiaobing; Liu, Sheng

2010-06-01

We demonstrate a freeform lens to enhance the angular color uniformity (ACU) of white light-emitting diodes (LEDs) whose phosphor layers were coated by freely dispersed coating processes. Monte Carlo ray tracing simulation results indicated that the ACU of the modified LED integrated with the freeform lens significantly increased from 0.334 to 0.957, compared with the traditional LED. Enhancement of ACU reached as high as 186.5%. Moreover, the ACU of the modified LED was not only at a high level, but also stable when the shape of the phosphor layer changed. The freeform lens provided an effective way to achieve white LEDs with high ACU at low cost.

Quantum technology past, present, future: quantum energetics (Conference Presentation)

NASA Astrophysics Data System (ADS)

Choi, Sang H.

2017-04-01

Since the development of quantum physics in the early part of the 1900s, this field of study has made remarkable contributions to our civilization. Some of these advances include lasers, light-emitting diodes (LED), sensors, spectroscopy, quantum dots, quantum gravity and quantum entanglements. In 1998, the NASA Langley Research Center established a quantum technology committee to monitor the progress in this area and initiated research to determine the potential of quantum technology for future NASA missions. The areas of interest in quantum technology at NASA included fundamental quantum-optics materials associated with quantum dots and quantum wells, device-oriented photonic crystals, smart optics, quantum conductors, quantum information and computing, teleportation theorem, and quantum energetics. A brief review of the work performed, the progress made in advancing these technologies, and the potential NASA applications of quantum technology will be presented.

Demonstration Assessment of Light Emitting Diode (LED) Walkway Lighting at the Federal Aviation Administration William J. Hughes Technical Center, in Atlantic City, New Jersey

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kinzey, Bruce R.; Myer, Michael

This report documents the results of a collaborative project to demonstrate a solid state lighting (SSL) general illumination product in an outdoor area walkway application. In the project, six light-emitting diode (LED) luminaires were installed to replace six existing high pressure sodium (HPS) luminaires mounted on 14-foot poles on a set of exterior walkways and stairs at the Federal Aviation Administration (FAA) William J. Hughes Technical Center in Atlantic City, New Jersey, during December, 2007. The effort was a U.S. Department of Energy (DOE) SSL Technology Gateway Demonstration that involved a collaborative teaming agreement between DOE, FAA and Ruud Lightingmore » (and their wholly owned division, Beta LED). Pre- and post-installation power and illumination measurements were taken and used in calculations of energy savings and related economic payback, while personnel impacted by the new lights were provided questionnaires to gauge their perceptions and feedback. The SSL product demonstrated energy savings of over 25% while maintaining illuminance levels and improving illuminance uniformity. PNNL's economic analysis yielded a variety of potential payback results depending on the assumptions used. In the best case, replacing HPS with the LED luminaire can yield a payback as low as 3 years. The new lamps were quite popular with the affected personnel, who gave the lighting an average score of 4.46 out of 5 for improvement.« less

Antibacterial Mechanism of 405-Nanometer Light-Emitting Diode against Salmonella at Refrigeration Temperature.

PubMed

Kim, Min-Jeong; Yuk, Hyun-Gyun

2017-03-01

The aim of this study was to elucidate the antibacterial mechanism of 405 ± 5-nm light-emitting diode (LED) illumination against Salmonella at 4°C in phosphate-buffered saline (PBS) by determining endogenous coproporphyrin content, DNA oxidation, damage to membrane function, and morphological change. Gene expression levels, including of oxyR , recA , rpoS , sodA , and soxR , were also examined to understand the response of Salmonella to LED illumination. The results showed that Salmonella strains responded differently to LED illumination, revealing that S. enterica serovar Enteritidis (ATCC 13076) and S. enterica subsp. enterica serovar Saintpaul (ATCC 9712) were more susceptible and resistant, respectively, than the 16 other strains tested. There was no difference in the amounts of endogenous coproporphyrin in the two strains. Compared with that in nonilluminated cells, the DNA oxidation levels in illuminated cells increased. In illuminated cells, we observed a loss of efflux pump activity, damage to the glucose uptake system, and changes in membrane potential and integrity. Transmission electron microscopy revealed a disorganization of chromosomes and ribosomes due to LED illumination. The levels of the five genes measured in the nonilluminated and illuminated S Saintpaul cells were upregulated in PBS at a set temperature of 4°C, indicating that increased gene expression levels might be due to a temperature shift and nutrient deficiency rather than to LED illumination. In contrast, only oxyR in S Enteritidis cells was upregulated. Thus, different sensitivities of the two strains to LED illumination were attributed to differences in gene regulation. IMPORTANCE Bacterial inactivation using visible light has recently received attention as a safe and environmentally friendly technology, in contrast with UV light, which has detrimental effects on human health and the environment. This study was designed to understand how 405 ± 5-nm light-emitting diode (LED) illumination kills Salmonella strains at refrigeration temperature. The data clearly demonstrated that the effectiveness of LED illumination on Salmonella strains depended highly on the serotype and strain. Our findings also revealed that its antibacterial mechanism was mainly attributed to DNA oxidation and a loss of membrane functions rather than membrane lipid peroxidation, which has been proposed by other researchers who studied the antibacterial effect of LED illumination by adding exogenous photosensitizers, such as chlorophyllin and hypericin. Therefore, this study suggests that the detailed antibacterial mechanisms of 405-nm LED illumination without additional photosensitizers may differ from that by exogenous photosensitizers. Furthermore, a change in stress-related gene regulation may alter the susceptibility of Salmonella cells to LED illumination at refrigeration temperature. Thus, our study provides new insights into the antibacterial mechanism of 405 ± 5-nm LED illumination on Salmonella cells. Copyright © 2017 American Society for Microbiology.

Antibacterial Mechanism of 405-Nanometer Light-Emitting Diode against Salmonella at Refrigeration Temperature

PubMed Central

Kim, Min-Jeong

2016-01-01

ABSTRACT The aim of this study was to elucidate the antibacterial mechanism of 405 ± 5-nm light-emitting diode (LED) illumination against Salmonella at 4°C in phosphate-buffered saline (PBS) by determining endogenous coproporphyrin content, DNA oxidation, damage to membrane function, and morphological change. Gene expression levels, including of oxyR, recA, rpoS, sodA, and soxR, were also examined to understand the response of Salmonella to LED illumination. The results showed that Salmonella strains responded differently to LED illumination, revealing that S. enterica serovar Enteritidis (ATCC 13076) and S. enterica subsp. enterica serovar Saintpaul (ATCC 9712) were more susceptible and resistant, respectively, than the 16 other strains tested. There was no difference in the amounts of endogenous coproporphyrin in the two strains. Compared with that in nonilluminated cells, the DNA oxidation levels in illuminated cells increased. In illuminated cells, we observed a loss of efflux pump activity, damage to the glucose uptake system, and changes in membrane potential and integrity. Transmission electron microscopy revealed a disorganization of chromosomes and ribosomes due to LED illumination. The levels of the five genes measured in the nonilluminated and illuminated S. Saintpaul cells were upregulated in PBS at a set temperature of 4°C, indicating that increased gene expression levels might be due to a temperature shift and nutrient deficiency rather than to LED illumination. In contrast, only oxyR in S. Enteritidis cells was upregulated. Thus, different sensitivities of the two strains to LED illumination were attributed to differences in gene regulation. IMPORTANCE Bacterial inactivation using visible light has recently received attention as a safe and environmentally friendly technology, in contrast with UV light, which has detrimental effects on human health and the environment. This study was designed to understand how 405 ± 5-nm light-emitting diode (LED) illumination kills Salmonella strains at refrigeration temperature. The data clearly demonstrated that the effectiveness of LED illumination on Salmonella strains depended highly on the serotype and strain. Our findings also revealed that its antibacterial mechanism was mainly attributed to DNA oxidation and a loss of membrane functions rather than membrane lipid peroxidation, which has been proposed by other researchers who studied the antibacterial effect of LED illumination by adding exogenous photosensitizers, such as chlorophyllin and hypericin. Therefore, this study suggests that the detailed antibacterial mechanisms of 405-nm LED illumination without additional photosensitizers may differ from that by exogenous photosensitizers. Furthermore, a change in stress-related gene regulation may alter the susceptibility of Salmonella cells to LED illumination at refrigeration temperature. Thus, our study provides new insights into the antibacterial mechanism of 405 ± 5-nm LED illumination on Salmonella cells. PMID:28003197

Quantum-dot light-emitting diodes utilizing CdSe /ZnS nanocrystals embedded in TiO2 thin film

NASA Astrophysics Data System (ADS)

Kang, Seung-Hee; Kumar, Ch. Kiran; Lee, Zonghoon; Kim, Kyung-Hyun; Huh, Chul; Kim, Eui-Tae

2008-11-01

Quantum-dot (QD) light-emitting diodes (LEDs) are demonstrated on Si wafers by embedding core-shell CdSe /ZnS nanocrystals in TiO2 thin films via plasma-enhanced metallorganic chemical vapor deposition. The n-TiO2/QDs /p-Si LED devices show typical p-n diode current-voltage and efficient electroluminescence characteristics, which are critically affected by the removal of QD surface ligands. The TiO2/QDs /Si system we presented can offer promising Si-based optoelectronic and electronic device applications utilizing numerous nanocrystals synthesized by colloidal solution chemistry.

Ultraviolet light-absorbing and emitting diodes consisting of a p-type transparent-semiconducting NiO film deposited on an n-type GaN homoepitaxial layer

NASA Astrophysics Data System (ADS)

Nakai, Hiroshi; Sugiyama, Mutsumi; Chichibu, Shigefusa F.

2017-05-01

Gallium nitride (GaN) and related (Al,Ga,In)N alloys provide practical benefits in the production of light-emitting diodes (LEDs) and laser diodes operating in ultraviolet (UV) to green wavelength regions. However, obtaining low resistivity p-type AlN or AlGaN of large bandgap energies (Eg) is a critical issue in fabricating UV and deep UV-LEDs. NiO is a promising candidate for useful p-type transparent-semiconducting films because its Eg is 4.0 eV and it can be doped into p-type conductivity of sufficiently low resistivity. By using these technologies, heterogeneous junction diodes consisting of a p-type transparent-semiconducting polycrystalline NiO film on an n-type single crystalline GaN epilayer on a low threading-dislocation density, free-standing GaN substrate were fabricated. The NiO film was deposited by using the conventional RF-sputtering method, and the GaN homoepitaxial layer was grown by metalorganic vapor phase epitaxy. They exhibited a significant photovoltaic effect under UV light and also exhibited an electroluminescence peak at 3.26 eV under forward-biased conditions. From the conduction and valence band (EV) discontinuities, the NiO/GaN heterointerface is assigned to form a staggered-type (TYPE-II) band alignment with the EV of NiO higher by 2.0 eV than that of GaN. A rectifying property that is consistent with the proposed band diagram was observed in the current-voltage characteristics. These results indicate that polycrystalline NiO functions as a hole-extracting and injecting layer of UV optoelectronic devices.

Wafer bonding process for building MEMS devices

NASA Astrophysics Data System (ADS)

Pabo, Eric F.; Meiler, Josef; Matthias, Thorsten

2014-06-01

The technology for the measurement of colour rendering and colour quality is not new, but many parameters related to this issue are currently changing. A number of standard methods were developed and are used by different specialty areas of the lighting industry. CIE 13.3 has been the accepted standard implemented by many users and used for many years. Light-emitting Diode (LED) technology moves at a rapid pace and, as this lighting source finds wider acceptance, it appears that traditional colour-rendering measurement methods produce inconsistent results. Practical application of various types of LEDs yielded results that challenged conventional thinking regarding colour measurement of light sources. Recent studies have shown that the anatomy and physiology of the human eye is more complex than formerly accepted. Therefore, the development of updated measurement methodology also forces a fresh look at functioning and colour perception of the human eye, especially with regard to LEDs. This paper includes a short description of the history and need for the measurement of colour rendering. Some of the traditional measurement methods are presented and inadequacies are discussed. The latest discoveries regarding the functioning of the human eye and the perception of colour, especially when LEDs are used as light sources, are discussed. The unique properties of LEDs when used in practical applications such as luminaires are highlighted.

Eye safety related to near infrared radiation exposure to biometric devices.

PubMed

Kourkoumelis, Nikolaos; Tzaphlidou, Margaret

2011-03-01

Biometrics has become an emerging field of technology due to its intrinsic security features concerning the identification of individuals by means of measurable biological characteristics. Two of the most promising biometric modalities are iris and retina recognition, which primarily use nonionizing radiation in the infrared region. Illumination of the eye is achieved by infrared light emitting diodes (LEDs). Even if few LED sources are capable of causing direct eye damage as they emit incoherent light, there is a growing concern about the possible use of LED arrays that might pose a potential threat. Exposure to intense coherent infrared radiation has been proven to have significant effects on living tissues. The purpose of this study is to explore the biological effects arising from exposing the eye to near infrared radiation with reference to international legislation.

Demonstrating the Light-Emitting Diode.

ERIC Educational Resources Information Center

Johnson, David A.

1995-01-01

Describes a simple inexpensive circuit which can be used to quickly demonstrate the basic function and versatility of the solid state diode. Can be used to demonstrate the light-emitting diode (LED) as a light emitter, temperature sensor, light detector with both a linear and logarithmic response, and charge storage device. (JRH)

Hand-Drawn Resistors and a Simple Tester Using a Light-Emitting Diode

ERIC Educational Resources Information Center

Kamata, Masahiro; Abe, Mayumi

2012-01-01

A thick line drawn on a sheet of paper with a 6B pencil is electrically conductive and its resistance can be roughly estimated using a simple tester made of a light-emitting diode (LED) and a lithium coin-type cell. Using this hand-drawn resistor and the LED tester, we developed teaching materials that help students to understand how electrical…

Antibacterial effect of light emitting diodes of visible wavelengths on selected foodborne pathogens at different illumination temperatures.

PubMed

Ghate, Vinayak S; Ng, Kheng Siang; Zhou, Weibiao; Yang, Hyunsoo; Khoo, Gek Hoon; Yoon, Won-Byong; Yuk, Hyun-Gyun

2013-09-16

The antibacterial effect of light emitting diodes (LEDs) in the visible region (461, 521 and 642 nm) of the electromagnetic spectrum was investigated on Escherichia coli O157:H7, Salmonella typhimurium, Listeria monocytogenes and Staphylococcus aureus. The irradiances of the 461, 521 and 642 nm LEDs were 22.1, 16 and 25.4 mW/cm², respectively. Bacterial cultures suspended in tryptic soy broth were illuminated by 10-watt LEDs at a distance of 4.5 cm for 7.5h at 20, 15 and 10 °C. Regardless of the bacterial strains, bacterial inactivation was observed with the range of 4.6-5.2 logCFU/ml at 10 and 15 °C after illumination with the 461 nm LED, while illumination with the 521 nm LED resulted in only 1.0-2.0 log reductions after 7.5h. On the other hand, no antibacterial effect was observed using the 642 nm LED treatment. The photodynamic inactivation by 461 and 521 nm LEDs was found to be greater at the set temperatures of 10 and 15 °C than at 20 °C. The D-values for the four bacterial strains at 10 and 15 °C after the illumination of 461 nm LED ranged from 1.29 to 1.74 h, indicating that there was no significant difference in the susceptibility of the bacterial strains to the LED illumination between 10 and 15 °C, except for L. monocytogenes. Regardless of the illumination temperature, sublethal injury was observed in all bacterial strains during illumination with the 461 and the 521 nm LED and the percentage of injured cells increased as the treatment time increased. Thus, the results show that the antibacterial effect of the LEDs was highly dependent on the wavelength and the illumination temperature. This study suggests the potential of 461 and 521 nm LEDs in combination with chilling to be used as a novel food preservation technology. © 2013 Elsevier B.V. All rights reserved.

Importance of 'blue' photon levels for lettuce seedlings grown under red-light-emitting diodes

NASA Technical Reports Server (NTRS)

Hoenecke, M. E.; Bula, R. J.; Tibbitts, T. W.

1992-01-01

Light-emitting diodes (LEDs) with high-intensity output are being studied as a photosynthetic light source for plants. High-output LEDs have peak emission at approximately 660 nm concentrated in a waveband of +/- 30 nm. Lettuce (Lactuca sativa Grand Rapids') seedlings developed extended hypocotyls and elongated cotyledons when grown under these LEDs as a sole source of irradiance. This extension and elongation was prevented when the red LED radiation was supplemented with more than 15 micromoles m-2 s-1 of 400- to 500-nm photons from blue fluorescent lamps. Blue radiation effects were independent of the photon level of the red radiation.

Disinfection of Spacecraft Potable Water Systems by Photocatalytic Oxidation Using UV-A Light Emitting Diodes

NASA Technical Reports Server (NTRS)

Birmele, Michele N.; O'Neal, Jeremy A.; Roberts, Michael S.

2011-01-01

Ultraviolet (UV) light has long been used in terrestrial water treatment systems for photodisinfection and the removal of organic compounds by several processes including photoadsorption, photolysis, and photocatalytic oxidation/reduction. Despite its effectiveness for water treatment, UV has not been explored for spacecraft applications because of concerns about the safety and reliability of mercury-containing UV lamps. However, recent advances in ultraviolet light emitting diodes (UV LEDs) have enabled the utilization of nanomaterials that possess the appropriate optical properties for the manufacture of LEDs capable of producing monochromatic light at germicidal wavelengths. This report describes the testing of a commercial-off-the-shelf, high power Nichia UV-A LED (250mW A365nnJ for the excitation of titanium dioxide as a point-of-use (POD) disinfection device in a potable water system. The combination of an immobilized, high surface area photocatalyst with a UV-A LED is promising for potable water system disinfection since toxic chemicals and resupply requirements are reduced. No additional consumables like chemical biocides, absorption columns, or filters are required to disinfect and/or remove potentially toxic disinfectants from the potable water prior to use. Experiments were conducted in a static test stand consisting of a polypropylene microtiter plate containing 3mm glass balls coated with titanium dioxide. Wells filled with water were exposed to ultraviolet light from an actively-cooled UV-A LED positioned above each well and inoculated with six individual challenge microorganisms recovered from the International Space Station (ISS): Burkholderia cepacia, Cupriavidus metallidurans, Methylobacterium fujisawaense, Pseudomonas aeruginosa, Sphingomonas paucimobilis and Wautersia basilensis. Exposure to the Nichia UV-A LED with photocatalytic oxidation resulted in a complete (>7-log) reduction of each challenge bacteria population in <180 minutes of contact time. With continued advances in the design and manufacture of UV-A LEDs and semi-conducting photocatalysts, LED activated photochemical process technology promises to extend its application to spacecraft environmental systems.

Benefit from NASA

NASA Image and Video Library

1997-01-01

A special lighting technology was developed for space-based commercial plant growth research on NASA's Space Shuttle. Surgeons have used this technology to treat brain cancer on Earth, in two successful operations. The treatment technique, called Photodynamic Therapy, requires the surgeon to use tiny, pinhead-size Light Emitting Diodes (LEDs) (a source that releases long wavelengths of light ) to activate light-sensitive, tumor-treating drugs. "A young woman operated on in May 1999 has fully recovered with no complications and no evidence of the tumor coming back," said Dr. Harry Whelan, a pediatric neurologist at the Medical Hospital of Wisconsin in Milwaukee. Laser light has been used for this type of surgery in the past, but the LED light illuminates through all nearby tissues, reaching parts of a tumor that shorter wavelengths of laser light carnot. The new probe is safer because the longer wavelengths of light are cooler than the shorter wavelengths of laser light, making the LED less likely to injure normal brain tissue near the tumor. It can be used for hours at a time while still remaining cool to the touch. The LED light source is compact, about the size of a briefcase, and can be purchased for a fraction of the cost of a laser. The LEDs, developed and managed by NASA's Marshall Space Flight Center, have been used on seven Space Shuttle flights inside the Microgravity Astroculture Facility. This technology has also been successfully used to further commercial research in crop growth.

Accuracy Improvement for Light-Emitting-Diode-Based Colorimeter by Iterative Algorithm

NASA Astrophysics Data System (ADS)

Yang, Pao-Keng

2011-09-01

We present a simple algorithm, combining an interpolating method with an iterative calculation, to enhance the resolution of spectral reflectance by removing the spectral broadening effect due to the finite bandwidth of the light-emitting diode (LED) from it. The proposed algorithm can be used to improve the accuracy of a reflective colorimeter using multicolor LEDs as probing light sources and is also applicable to the case when the probing LEDs have different bandwidths in different spectral ranges, to which the powerful deconvolution method cannot be applied.

Plastic cup traps equipped with light-emitting diodes for monitoring adult Bemisia tabaci (Homoptera: Aleyrodidae).

PubMed

Chu, Chang-Chi; Jackson, Charles G; Alexander, Patrick J; Karut, Kamil; Henneberry, Thomas J

2003-06-01

Equipping the standard plastic cup trap, also known as the CC trap, with lime-green light-emitting diodes (LED-plastic cup trap) increased its efficacy for catching Bemisia tabaci by 100%. Few Eretmocerus eremicus Rose and Zolnerowich and Encarsia formosa Gahan were caught in LED-plastic cup traps. The LED-plastic cup traps are less expensive than yellow sticky card traps for monitoring adult whiteflies in greenhouse crop production systems and are more compatible with whitefly parasitoids releases for Bemisia nymph control.

Colloidal quantum dot active layers for light emitting diodes

NASA Astrophysics Data System (ADS)

Pagan, Jennifer G.; Stokes, Edward B.; Patel, Kinnari; Burkhart, Casey C.; Ahrens, Michael T.; Barletta, Philip T.; O'Steen, Mark

2006-07-01

In this paper the preliminary results of incorporating a novel active layer into a GaN light emitting diode (LED) are discussed. Integration of colloidal CdSe quantum dots into a GaN LED active layer is demonstrated. Properties of p-type Mg doped overgrowth GaN are examined via circular transmission line method (CTLM). Effects on surface roughness due to the active layer incorporation are examined using atomic force microscopy (AFM). Electroluminescence of LED test structures is reported, and an ideality factor of n = 1.6 is demonstrated.

A transparent look at the measurement and application of colour rendering in the use of LED light sources

NASA Astrophysics Data System (ADS)

Leuschner, F. W.; Van Der Westhuyzen, J. G. J.

2014-06-01

The technology for the measurement of colour rendering and colour quality is not new, but many parameters related to this issue are currently changing. A number of standard methods were developed and are used by different specialty areas of the lighting industry. CIE 13.3 has been the accepted standard implemented by many users and used for many years. Light-emitting Diode (LED) technology moves at a rapid pace and, as this lighting source finds wider acceptance, it appears that traditional colour-rendering measurement methods produce inconsistent results. Practical application of various types of LEDs yielded results that challenged conventional thinking regarding colour measurement of light sources. Recent studies have shown that the anatomy and physiology of the human eye is more complex than formerly accepted. Therefore, the development of updated measurement methodology also forces a fresh look at functioning and colour perception of the human eye, especially with regard to LEDs. This paper includes a short description of the history and need for the measurement of colour rendering. Some of the traditional measurement methods are presented and inadequacies are discussed. The latest discoveries regarding the functioning of the human eye and the perception of colour, especially when LEDs are used as light sources, are discussed. The unique properties of LEDs when used in practical applications such as luminaires are highlighted.

Replacement policy of residential lighting optimized for cost, energy, and greenhouse gas emissions

NASA Astrophysics Data System (ADS)

Liu, Lixi; Keoleian, Gregory A.; Saitou, Kazuhiro

2017-11-01

Accounting for 10% of the electricity consumption in the US, artificial lighting represents one of the easiest ways to cut household energy bills and greenhouse gas (GHG) emissions by upgrading to energy-efficient technologies such as compact fluorescent lamps (CFL) and light emitting diodes (LED). However, given the high initial cost and rapidly improving trajectory of solid-state lighting today, estimating the right time to switch over to LEDs from a cost, primary energy, and GHG emissions perspective is not a straightforward problem. This is an optimal replacement problem that depends on many determinants, including how often the lamp is used, the state of the initial lamp, and the trajectories of lighting technology and of electricity generation. In this paper, multiple replacement scenarios of a 60 watt-equivalent A19 lamp are analyzed and for each scenario, a few replacement policies are recommended. For example, at an average use of 3 hr day-1 (US average), it may be optimal both economically and energetically to delay the adoption of LEDs until 2020 with the use of CFLs, whereas purchasing LEDs today may be optimal in terms of GHG emissions. In contrast, incandescent and halogen lamps should be replaced immediately. Based on expected LED improvement, upgrading LED lamps before the end of their rated lifetime may provide cost and environmental savings over time by taking advantage of the higher energy efficiency of newer models.

Hybrid daylight/light-emitting diode illumination system for indoor lighting.

PubMed

Ge, Aiming; Qiu, Peng; Cai, Jinlin; Wang, Wei; Wang, Junwei

2014-03-20

A hybrid illumination method using both daylight and light-emitting diodes (LEDs) for indoor lighting is presented in this study. The daylight can be introduced into the indoor space by a panel-integration system. The daylight part and LEDs are combined within a specific luminaire that can provide uniform illumination. The LEDs can be turned on and dimmed through closed-loop control when the daylight illuminance is inadequate. We simulated the illumination and calculated the indoor lighting efficiency of our hybrid daylight and LED lighting system, and compared this with that of LED and fluorescent lighting systems. Simulation results show that the efficiency of the hybrid daylight/LED illumination method is better than that of LED and traditional lighting systems, under the same lighting conditions and lighting time; the method has hybrid lighting average energy savings of T5 66.28%, and that of the LEDs is 41.62%.

Demonstration Assessment of Light-Emitting Diode (LED) Parking Lot Lighting in Leavenworth, KS

DOE Office of Scientific and Technical Information (OSTI.GOV)

Myer, Michael; Kinzey, Bruce R.; Curry, Ku'uipo

2011-05-06

This report describes the process and results of a demonstration of solid-state lighting (SSL) technology in a commercial parking lot lighting application, under the U.S. Department of Energy (DOE) Solid-State Lighting Technology GATEWAY Demonstration Program. The parking lot is for customers and employees of a Walmart Supercenter in Leavenworth, Kansas and this installation represents the first use of the LED Parking Lot Performance Specification developed by the DOE’s Commercial Building Energy Alliance. The application is a parking lot covering more than a half million square feet, lighted primarily by light-emitting diodes (LEDs). Metal halide wall packs were installed along themore » building facade. This site is new construction, so the installed baseline(s) were hypothetical designs. It was acknowledged early on that deviating from Walmart’s typical design would reduce the illuminance on the site. Walmart primarily uses 1000W pulse-start metal halide (PMH) lamps. In order to provide a comparison between both typical design and a design using conventional luminaires providing a lower illuminance, a 400W PMH design was also considered. As mentioned already, the illuminance would be reduced by shifting from the PMH system to the LED system. The Illuminating Engineering Society of North America (IES) provides recommended minimum illuminance values for parking lots. All designs exceeded the recommended illuminance values in IES RP-20, some by a wider margin than others. Energy savings from installing the LED system compared to the different PMH systems varied. Compared to the 1000W PMH system, the LED system would save 63 percent of the energy. However, this corresponds to a 68 percent reduction in illuminance as well. In comparison to the 400W PMH system, the LED system would save 44 percent of the energy and provide similar minimum illuminance values at the time of relamping. The LED system cost more than either of the PMH systems when comparing initial costs. However, when the life-cycle costs from energy and maintenance were factored into the scenario, the LED system had lower costs at the end of a 10-year analysis period. The LED system had a 6.1 year payback compared to the 1000W PMH system and a 7.5 year payback versus the 400W PMH system. The costs reflect high initial cost for the LED luminaire, plus more luminaires and (subsequently) more poles for the LED system. The other major issue affecting cost effectiveness was that Leavenworth, Kansas has very low electricity costs. The melded rate for this site was $0.056 per kWh for electricity. However, if the national electricity rate of $0.1022/kWh was used the payback would change to between four and five years for the LED system. This demonstration met the GATEWAY requirements of saving energy, matching or improving illumination, and being cost effective. The project also demonstrated that the Commercial Building Energy Alliance (CBEA) specification works in practice. Walmart appreciated having an entire site lighted by LEDs to gain more experience with the technology. Walmart is reviewing the results of the demonstration as they consider their entire real estate portfolio.« less

Current crowding and self-heating effects in AlGaN-based flip-chip deep-ultraviolet light-emitting diodes

NASA Astrophysics Data System (ADS)

Hao, Guo-Dong; Taniguchi, Manabu; Tamari, Naoki; Inoue, Shin-ichiro

2018-01-01

We thoroughly explored the physical origin of the efficiency decrease with increasing injection current and current crowding effect in 280 nm AlGaN-based flip-chip deep-ultraviolet (DUV) light-emitting diodes (LEDs). The current spreading length was experimentally determined to be much smaller in DUV LEDs than that in conventional InGaN-based visible LEDs. The severe self-heating caused by the low power conversion efficiency of DUV LEDs should be mainly responsible for the considerable decrease of efficiency when current crowding is present. The wall-plug efficiency of the DUV LEDs was markedly enhanced by using a well-designed p-electrode pattern to improve the current distribution.

Note: An online testing method for lifetime projection of high power light-emitting diode under accelerated reliability test.

PubMed

Chen, Qi; Chen, Quan; Luo, Xiaobing

2014-09-01

In recent years, due to the fast development of high power light-emitting diode (LED), its lifetime prediction and assessment have become a crucial issue. Although the in situ measurement has been widely used for reliability testing in laser diode community, it has not been applied commonly in LED community. In this paper, an online testing method for LED life projection under accelerated reliability test was proposed and the prototype was built. The optical parametric data were collected. The systematic error and the measuring uncertainty were calculated to be within 0.2% and within 2%, respectively. With this online testing method, experimental data can be acquired continuously and sufficient amount of data can be gathered. Thus, the projection fitting accuracy can be improved (r(2) = 0.954) and testing duration can be shortened.

Flexible deep-ultraviolet light-emitting diodes for significant improvement of quantum efficiencies by external bending

NASA Astrophysics Data System (ADS)

Shervin, Shahab; Oh, Seung Kyu; Park, Hyun Jung; Lee, Keon-Hwa; Asadirad, Mojtaba; Kim, Seung-Hwan; Kim, Jeomoh; Pouladi, Sara; Lee, Sung-Nam; Li, Xiaohang; Kwak, Joon Seop; Ryou, Jae-Hyun

2018-03-01

We report a new route to improve quantum efficiencies of AlGaN-based deep-ultraviolet light-emitting diodes (DUV LEDs) using mechanical flexibility of recently developed bendable thin-film structures. Numerical studies show that electronic band structures of AlGaN heterostructures and resulting optical and electrical characteristics of the devices can be significantly modified by external bending through active control of piezoelectric polarization. Internal quantum efficiency is enhanced higher than three times, when the DUV LEDs are moderately bent with concave curvatures. Furthermore, an efficiency droop at high injection currents is mitigated and turn-on voltage of diodes decreases with the same bending condition. The concept of bendable DUV LEDs with a controlled external strain can provide a new path for high-output-power and high-efficiency devices.

In situ measurement of the junction temperature of light emitting diodes using a flexible micro temperature sensor.

PubMed

Lee, Chi-Yuan; Su, Ay; Liu, Yin-Chieh; Fan, Wei-Yuan; Hsieh, Wei-Jung

2009-01-01

This investigation aimed to fabricate a flexible micro resistive temperature sensor to measure the junction temperature of a light emitting diode (LED). The junction temperature is typically measured using a thermal resistance measurement approach. This approach is limited in that no standard regulates the timing of data capture. This work presents a micro temperature sensor that can measure temperature stably and continuously, and has the advantages of being lightweight and able to monitor junction temperatures in real time. Micro-electro-mechanical-systems (MEMS) technologies are employed to minimize the size of a temperature sensor that is constructed on a stainless steel foil substrate (SS-304 with 30 μm thickness). A flexible micro resistive temperature sensor can be fixed between the LED chip and the frame. The junction temperature of the LED can be measured from the linear relationship between the temperature and the resistance. The sensitivity of the micro temperature sensor is 0.059 ± 0.004 Ω/°C. The temperature of the commercial CREE(®) EZ1000 chip is 119.97 °C when it is thermally stable, as measured using the micro temperature sensor; however, it was 126.9 °C, when measured by thermal resistance measurement. The micro temperature sensor can be used to replace thermal resistance measurement and performs reliably.

Effects of white light-emitting diode (LED) light exposure with different correlated color temperatures (CCTs) on human lens epithelial cells in culture.

PubMed

Xie, Chen; Li, Xiuyi; Tong, Jianping; Gu, Yangshun; Shen, Ye

2014-01-01

Cataract is the major cause for legal blindness in the world. Oxidative stress on the lens epithelial cells (hLECs) is the most important factor in cataract formation. Cumulative light-exposure from widely used light-emitting diodes (LEDs) may pose a potential oxidative threat to the lens epithelium, due to the high-energy blue light component in the white-light emission from diodes. In the interest of perfecting biosafety standards for LED domestic lighting, this study analyzed the photobiological effect of white LED light with different correlated color temperatures (CCTs) on cultured hLECs. The hLECs were cultured and cumulatively exposed to multichromatic white LED light with CCTs of 2954, 5624, and 7378 K. Cell viability of hLECs was measured by Cell Counting Kit-8 (CCK-8) assay. DNA damage was determined by alkaline comet assay. Intracellular reactive oxygen species (ROS) generation, cell cycle, and apoptosis were quantified by flow cytometry. Compared with 2954 and 5624 K LED light, LED light having a CCT of 7378 K caused overproduction of intracellular ROS and severe DNA damage, which triggered G2 /M arrest and apoptosis. These results indicate that white LEDs with a high CCT could cause significant photobiological damage to hLECs. © 2014 The American Society of Photobiology.

Note: A portable, light-emitting diode-based ruby fluorescence spectrometer for high-pressure calibration

DOE Office of Scientific and Technical Information (OSTI.GOV)

Feng Yejun

2011-04-15

Ruby (Al{sub 2}O{sub 3}, with {approx}0.5 wt. % Cr doping) is one of the most widely used manometers at the giga-Pascal scale. Traditionally, its fluorescence is excited with intense laser sources. Here, I present a simple, robust, and portable design that employs light-emitting diodes (LEDs) instead. This LED-based system is safer in comparison with laser-based ones.

A new light emitting diode-light emitting diode portable carbon dioxide gas sensor based on an interchangeable membrane system for industrial applications.

PubMed

de Vargas-Sansalvador, I M Pérez; Fay, C; Phelan, T; Fernández-Ramos, M D; Capitán-Vallvey, L F; Diamond, D; Benito-Lopez, F

2011-08-12

A new system for CO(2) measurement (0-100%) based on a paired emitter-detector diode arrangement as a colorimetric detection system is described. Two different configurations were tested: configuration 1 (an opposite side configuration) where a secondary inner-filter effect accounts for CO(2) sensitivity. This configuration involves the absorption of the phosphorescence emitted from a CO(2)-insensitive luminophore by an acid-base indicator and configuration 2 wherein the membrane containing the luminophore is removed, simplifying the sensing membrane that now only contains the acid-base indicator. In addition, two different instrumental configurations have been studied, using a paired emitter-detector diode system, consisting of two LEDs wherein one is used as the light source (emitter) and the other is used in reverse bias mode as the light detector. The first configuration uses a green LED as emitter and a red LED as detector, whereas in the second case two identical red LEDs are used as emitter and detector. The system was characterised in terms of sensitivity, dynamic response, reproducibility, stability and temperature influence. We found that configuration 2 presented a better CO(2) response in terms of sensitivity. Copyright © 2011 Elsevier B.V. All rights reserved.

Enhanced Optical and Electrical Properties of Polymer-Assisted All-Inorganic Perovskites for Light-Emitting Diodes.

PubMed

Ling, Yichuan; Tian, Yu; Wang, Xi; Wang, Jamie C; Knox, Javon M; Perez-Orive, Fernando; Du, Yijun; Tan, Lei; Hanson, Kenneth; Ma, Biwu; Gao, Hanwei

2016-10-01

Highly bright light-emitting diodes based on solution-processed all-inorganic perovskite thin film are demonstrated. The cesium lead bromide (CsPbBr 3 ) created using a new poly(ethylene oxide)-additive spin-coating method exhibits photoluminescence quantum yield up to 60% and excellent uniformity of electrical current distribution. Using the smooth CsPbBr 3 films as emitting layers, green perovskite-based light-emitting diodes (PeLEDs) exhibit electroluminescent brightness and efficiency above 53 000 cd m -2 and 4%: a new benchmark of device performance for all-inorganic PeLEDs. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Dome diagnostics system of optical parameters and characteristics of LEDs

NASA Astrophysics Data System (ADS)

Peretyagin, Vladimir S.; Pavlenko, Nikita A.

2017-09-01

Scientific and technological progress of recent years in the production of the light emitting diodes (LEDs) has led to the expansion of areas of their application from the simplest systems to high precision lighting devices used in various fields of human activity. However, development and production (especially mass production) of LED lighting devices are impossible without a thorough analysis of its parameters and characteristics. There are many ways and devices for analysis the spatial, energy and colorimetric parameters of LEDs. The most methods are intended for definition only one parameter (for example, luminous flux) or one characteristic (for example, the angular distribution of energy or the spectral characteristics). Besides, devices used these methods are intended for measuring parameters in only one point or plane. This problem can be solved by using a dome diagnostics system of optical parameters and characteristics of LEDs, developed by specialists of the department OEDS chair of ITMO University in Russia. The paper presents the theoretical aspects of the analysis of LED's spatial (angular), energy and color parameters by using mentioned of diagnostics system. The article also presents the results of spatial), energy and color parameters measurements of some LEDs brands.

Downlight Demonstration Program: Hilton Columbus Downtown

DOE Office of Scientific and Technical Information (OSTI.GOV)

Davis, Robert G.; Perrin, Tess E.

2014-05-13

The U.S. Department of Energy (DOE) estimates that there were about 700 million downlight luminaires installed in residential and commercial buildings in the U.S. as of 2012, with light-emitting diode (LED) luminaires representing less than 1% of this installed base. Downlight luminaires using conventional incandescent, halogen, and compact fluorescent lamps have lower efficacies and shorter expected lifetimes than comparable LED systems, but the lower initial cost of the conventional technology and the uncertainties associated with the newer LED technology have restricted widespread adoption of LED downlight luminaires. About 278 tBtu of energy could be saved annually if LED luminaires weremore » to saturate the downlight market, equating to an annual energy cost savings of $2.6 billion. This report summarizes an evaluation of LED recessed downlight luminaires in the guest rooms at the Hilton Columbus Downtown hotel in Columbus, OH. The facility opened in October of 2012, and the U.S. Department of Energy (DOE) conducted a post-occupancy assessment of the facility in January–March of 2014. Each of the 484 guest rooms uses seven 15 W LED downlights: four downlights in the entry and bedroom and three downlights in the bathroom. The 48 suites use the seven 15 W LED downlights and additional fixtures depending on the space requirements, so that in total the facility has more than 3,700 LED downlights. The downlights are controlled through wall-mounted switches and dimmers. A ceiling-mounted vacancy sensor ensures that the bathroom luminaires are turned off when the room is not occupied.« less

Monolithic stacked blue light-emitting diodes with polarization-enhanced tunnel junctions.

PubMed

Kuo, Yen-Kuang; Shih, Ya-Hsuan; Chang, Jih-Yuan; Lai, Wei-Chih; Liu, Heng; Chen, Fang-Ming; Lee, Ming-Lun; Sheu, Jinn-Kong

2017-08-07

Monolithic stacked InGaN light-emitting diode (LED) connected by a polarization-enhanced GaN/AlN-based tunnel junction is demonstrated experimentally in this study. The typical stacked LEDs exhibit 80% enhancement in output power compared with conventional single LEDs because of the repeated use of electrons and holes for photon generation. The typical operation voltage of stacked LEDs is higher than twice the operation voltage of single LEDs. This high operation voltage can be attributed to the non-optimal tunneling junction in stacked LEDs. In addition to the analyses of experimental results, theoretical analysis of different schemes of tunnel junctions, including diagrams of energy bands, diagrams of electric fields, and current-voltage relation curves, are investigated using numerical simulation. The results shown in this paper demonstrate the feasibility in developing cost-effective and highly efficient tunnel-junction LEDs.

2 kV slanted tri-gate GaN-on-Si Schottky barrier diodes with ultra-low leakage current

NASA Astrophysics Data System (ADS)

Ma, Jun; Matioli, Elison

2018-01-01

This letter reports lateral GaN-on-Si power Schottky barrier diodes (SBDs) with unprecedented voltage-blocking performance by integrating 3-dimensionally a hybrid of tri-anode and slanted tri-gate architectures in their anode. The hybrid tri-anode pins the voltage drop at the Schottky junction (VSCH), despite a large applied reverse bias, fixing the reverse leakage current (IR) of the SBD. Such architecture led to an ultra-low IR of 51 ± 5.9 nA/mm at -1000 V, in addition to a small turn-on voltage (VON) of 0.61 ± 0.03 V. The slanted tri-gate effectively distributes the electric field in OFF state, leading to a remarkably high breakdown voltage (VBR) of -2000 V at 1 μA/mm, constituting a significant breakthrough from existing technologies. The approach pursued in this work reduces the IR and increases the VBR without sacrificing the VON, which provides a technology for high-voltage SBDs, and unveils the unique advantage of tri-gates for advanced power applications.

Enhanced Output Power of Near-Ultraviolet Light-Emitting Diodes by p-GaN Micro-Rods

NASA Astrophysics Data System (ADS)

Wang, Dong-Sheng; Zhang, Ke-Xiong; Liang, Hong-Wei; Song, Shi-Wei; Yang, De-Chao; Shen, Ren-Sheng; Liu, Yang; Xia, Xiao-Chuan; Luo, Ying-Min; Du, Guo-Tong

2014-02-01

Near-ultraviolet (UV) InGaN/AlGaN light-emitting diodes (LEDs) are grown by low-pressure metal-organic chemical vapor deposition. The scanning electronic microscope image shows that the p-GaN micro-rods are formed above the interface of p-AlGaN/p-GaN due to the rapid growth rate of p-GaN in the vertical direction. The p-GaN micro-rods greatly increase the escape probability of photons inside the LED structure. Electroluminescence intensities of the 372 nm UV LED lamps with p-GaN micro rods are 88% higher than those of the flat surface LED samples.

Ultraviolet laser ablation as technique for defect repair of GaN-based light-emitting diodes

NASA Astrophysics Data System (ADS)

Passow, Thorsten; Kunzer, Michael; Pfeuffer, Alexander; Binder, Michael; Wagner, Joachim

2018-03-01

Defect repair of GaN-based light-emitting diodes (LEDs) by ultraviolet laser micromachining is reported. Percussion and helical drilling in GaN by laser ablation were investigated using 248 nm nanosecond and 355 nm picosecond pulses. The influence of laser ablation including different laser parameters on electrical and optical properties of GaN-based LED chips was evaluated. The results for LEDs on sapphire with transparent conductive oxide p-type contact on top as well as for thin-film LEDs are reported. A reduction of leakage current by up to six orders in magnitude and homogeneous luminance distribution after proper laser defect treatment were achieved.

NASA sponsored Light Emitting Diode (LED) development helps in cancer treatment

NASA Technical Reports Server (NTRS)

1997-01-01

What started out as an attempt to develop a light which would allow for the growth of plants in space led to a remarkable discovery: The Light Emitting Diode (LED). This device through extensive study and experimentation has developed into a tool used by surgeons in the fight against brain cancer in children. Pictured is a mock-up of brain surgery being performed. By encapsulating the end of the LED with a balloon, light is diffused over a larger area of the brain allowing the surgeon a better view. This is one of many programs that begin as research for the space program, and through extensive study end up benefitting all of mankind.

A Review on Experimental Measurements for Understanding Efficiency Droop in InGaN-Based Light-Emitting Diodes

PubMed Central

Jin, Jie; Mi, Chenziyi; Hao, Zhibiao; Luo, Yi; Sun, Changzheng; Han, Yanjun; Xiong, Bing; Wang, Jian; Li, Hongtao

2017-01-01

Efficiency droop in GaN-based light emitting diodes (LEDs) under high injection current density perplexes the development of high-power solid-state lighting. Although the relevant study has lasted for about 10 years, its mechanism is still not thoroughly clear, and consequently its solution is also unsatisfactory up to now. Some emerging applications, e.g., high-speed visible light communication, requiring LED working under extremely high current density, makes the influence of efficiency droop become more serious. This paper reviews the experimental measurements on LED to explain the origins of droop in recent years, especially some new results reported after 2013. Particularly, the carrier lifetime of LED is analyzed intensively and its effects on LED droop behaviors are uncovered. Finally, possible solutions to overcome LED droop are discussed. PMID:29072611

Tunnel junction enhanced nanowire ultraviolet light emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sarwar, A. T. M. Golam; May, Brelon J.; Deitz, Julia I.

Polarization engineered interband tunnel junctions (TJs) are integrated in nanowire ultraviolet (UV) light emitting diodes (LEDs). A ∼6 V reduction in turn-on voltage is achieved by the integration of tunnel junction at the base of polarization doped nanowire UV LEDs. Moreover, efficient hole injection into the nanowire LEDs leads to suppressed efficiency droop in TJ integrated nanowire LEDs. The combination of both reduced bias voltage and increased hole injection increases the wall plug efficiency in these devices. More than 100 μW of UV emission at ∼310 nm is measured with external quantum efficiency in the range of 4–6 m%. The realization of tunnel junctionmore » within the nanowire LEDs opens a pathway towards the monolithic integration of cascaded multi-junction nanowire LEDs on silicon.« less

Enhanced efficiency of light emitting diodes with a nano-patterned gallium nitride surface realized by soft UV nanoimprint lithography

NASA Astrophysics Data System (ADS)

Zhou, Weimin; Min, Guoquan; Song, Zhitang; Zhang, Jing; Liu, Yanbo; Zhang, Jianping

2010-05-01

This paper reports a significant enhancement in the extraction efficiency of nano-patterned GaN light emitting diodes (LED) realized by soft UV nanoimprint lithography. The 2 inch soft stamp was fabricated using a replication stamp of anodic alumina oxide (AAO) membrane. The light output power was enhanced by 10.9% compared to that of the LED sample without a nano-patterned surface. Up to 41% enhancement in photoluminescence intensity was obtained from the nano-patterned GaN LED sample. The method is simple, cheap and suitable for mass production.

Cost-Effective Hyperspectral Transmissometers for Oceanographic Applications: Performance Analysis

PubMed Central

Ramírez-Pérez, Marta; Röttgers, Rüdiger; Torrecilla, Elena; Piera, Jaume

2015-01-01

The recent development of inexpensive, compact hyperspectral transmissometers broadens the research capabilities of oceanographic applications. These developments have been achieved by incorporating technologies such as micro-spectrometers as detectors as well as light emitting diodes (LEDs) as light sources. In this study, we evaluate the performance of the new commercial LED-based hyperspectral transmissometer VIPER (TriOS GmbH, Rastede, Germany), which combines different LEDs to emulate the visible light spectrum, aiming at the determination of attenuation coefficients in coastal environments. For this purpose, experimental uncertainties related to the instrument stability, the effect of ambient light and derived temperature, and salinity correction factors are analyzed. Our results identify some issues related to the thermal management of the LEDs and the contamination of ambient light. Furthermore, the performance of VIPER is validated against other transmissometers through simultaneous field measurements. It is demonstrated that VIPER provides a compact and cost-effective alternative for beam attenuation measurements in coastal waters, but it requires the consideration of several optimizations. PMID:26343652

Thermal and optical aspects of glob-top design for phosphor converted white LED light sources

NASA Astrophysics Data System (ADS)

Sommer, Christian; Fulmek, Paul; Nicolics, Johann; Schweitzer, Susanne; Nemitz, Wolfgang; Hartmann, Paul; Pachler, Peter; Hoschopf, Hans; Schrank, Franz; Langer, Gregor; Wenzl, Franz P.

2013-09-01

For a systematic approach to improve the white light quality of phosphor converted light-emitting diodes (LEDs) for general lighting applications it is imperative to get the individual sources of error for correlated color temperature (CCT) reproducibility and maintenance under control. In this regard, it is of essential importance to understand how geometrical, optical and thermal properties of the color conversion elements (CCE), which typically consist of phosphor particles embedded in a transparent matrix material, affect the constancy of a desired CCT value. In this contribution we use an LED assembly consisting of an LED die mounted on a printed circuit board by chip-on-board technology and a CCE with a glob-top configuration on the top of it as a model system and discuss the impact of the CCE shape and size on CCT constancy with respect to substrate reflectivity and thermal load of the CCEs. From these studies, some general conclusions for improved glob-top design can be drawn.

Dynamic control of supplemental lighting for greenhouse

NASA Astrophysics Data System (ADS)

Wang, Yuanxv; Wei, Ruihua; Xu, Lihong

2018-04-01

The development of light-emitting diodes (LED) technology to a large extent reduce the energy consumption of greenhouse, however, the light control methods to realize the energy saving still have great potential. The aim of this paper is to develop a more efficient control method of dynamic control of the LED top-lighting (TL) intensity and the LED inter-lighting (IL) intensity for the greatest economic benefits. A dynamic lighting control algorithm (DLC) based on model is proposed, which defines the economic benefit performance criterion of the supplemental lighting control. The optimal light intensity of TL and IL is calculated in real time according to the algorithm. The simulation shows that economic benefit can be increased by up to 107.35% compared to TL on-off control. It is concluded that DLC is a feasible supplemental light control method, especially under low natural light conditions.

A spectrally tunable all-graphene-based flexible field-effect light-emitting device

NASA Astrophysics Data System (ADS)

Wang, Xiaomu; Tian, He; Mohammad, Mohammad Ali; Li, Cheng; Wu, Can; Yang, Yi; Ren, Tian-Ling

2015-07-01

The continuous tuning of the emission spectrum of a single light-emitting diode (LED) by an external electrical bias is of great technological significance as a crucial property in high-quality displays, yet this capability has not been demonstrated in existing LEDs. Graphene, a tunable optical platform, is a promising medium to achieve this goal. Here we demonstrate a bright spectrally tunable electroluminescence from blue (~450 nm) to red (~750 nm) at the graphene oxide/reduced-graphene oxide interface. We explain the electroluminescence results from the recombination of Poole-Frenkel emission ionized electrons at the localized energy levels arising from semi-reduced graphene oxide, and holes from the top of the π band. Tuning of the emission wavelength is achieved by gate modulation of the participating localized energy levels. Our demonstration of current-driven tunable LEDs not only represents a method for emission wavelength tuning but also may find applications in high-quality displays.

Flip-chip light emitting diode with resonant optical microcavity

DOEpatents

Gee, James M.; Bogart, Katherine H.A.; Fischer, Arthur J.

2005-11-29

A flip-chip light emitting diode with enhanced efficiency. The device structure employs a microcavity structure in a flip-chip configuration. The microcavity enhances the light emission in vertical modes, which are readily extracted from the device. Most of the rest of the light is emitted into waveguided lateral modes. Flip-chip configuration is advantageous for light emitting diodes (LEDs) grown on dielectric substrates (e.g., gallium nitride LEDs grown on sapphire substrates) in general due to better thermal dissipation and lower series resistance. Flip-chip configuration is advantageous for microcavity LEDs in particular because (a) one of the reflectors is a high-reflectivity metal ohmic contact that is already part of the flip-chip configuration, and (b) current conduction is only required through a single distributed Bragg reflector. Some of the waveguided lateral modes can also be extracted with angled sidewalls used for the interdigitated contacts in the flip-chip configuration.

Monolithic photonic integrated circuit with a GaN-based bent waveguide

NASA Astrophysics Data System (ADS)

Cai, Wei; Qin, Chuan; Zhang, Shuai; Yuan, Jialei; Zhang, Fenghua; Wang, Yongjin

2018-06-01

Integration of a transmitter, waveguide and receiver into a single chip can generate a multicomponent system with multiple functionalities. Here, we fabricate and characterize a GaN-based photonic integrated circuit (PIC) on a GaN-on-silicon platform. With removal of the silicon and back wafer thinning of the epitaxial film, ultrathin membrane-type devices and highly confined suspended GaN waveguides were formed. Two suspended-membrane InGaN/GaN multiple-quantum-well diodes (MQW-diodes) served as an MQW light-emitting diode (MQW-LED) to emit light and an MQW photodiode (MQW-PD) to sense light. The optical interconnects between the MQW-LED and MQW-PD were achieved using the GaN bent waveguide. The GaN-based PIC consisting of an MQW-LED, waveguides and an MQW-PD forms an in-plane light communication system with a data transmission rate of 70 Mbps.

Operation of AC Adapters Visualized Using Light-Emitting Diodes

ERIC Educational Resources Information Center

Regester, Jeffrey

2016-01-01

A bridge rectifier is a diamond-shaped configuration of diodes that serves to convert alternating current(AC) into direct current (DC). In our world of AC outlets and DC electronics, they are ubiquitous. Of course, most bridge rectifiers are built with regular diodes, not the light-emitting variety, because LEDs have a number of disadvantages. For…

Low-frequency wide-field fluorescence lifetime imaging using a high-power near-infrared light-emitting diode light source

PubMed Central

Gioux, Sylvain; Lomnes, Stephen J.; Choi, Hak Soo; Frangioni, John V.

2010-01-01

Fluorescence lifetime imaging (FLi) could potentially improve exogenous near-infrared (NIR) fluorescence imaging, because it offers the capability of discriminating a signal of interest from background, provides real-time monitoring of a chemical environment, and permits the use of several different fluorescent dyes having the same emission wavelength. We present a high-power, LED-based, NIR light source for the clinical translation of wide-field (larger than 5 cm in diameter) FLi at frequencies up to 35 MHz. Lifetime imaging of indocyanine green (ICG), IRDye 800-CW, and 3,3′-diethylthiatricarbocyanine iodide (DTTCI) was performed over a large field of view (10 cm by 7.5 cm) using the LED light source. For comparison, a laser diode light source was employed as a gold standard. Experiments were performed both on the bench by diluting the fluorescent dyes in various chemical environments in Eppendorf tubes, and in vivo by injecting the fluorescent dyes mixed in Matrigel subcutaneously into CD-1 mice. Last, measured fluorescence lifetimes obtained using the LED and the laser diode sources were compared with those obtained using a state-of-the-art time-domain imaging system and with those previously described in the literature. On average, lifetime values obtained using the LED and the laser diode light sources were consistent, exhibiting a mean difference of 3% from the expected values and a coefficient of variation of 12%. Taken together, our study offers an alternative to laser diodes for clinical translation of FLi and explores the use of relatively low frequency modulation for in vivo imaging. PMID:20459250

Improving the Stability of Metal Halide Perovskite Materials and Light-Emitting Diodes.

PubMed

Cho, Himchan; Kim, Young-Hoon; Wolf, Christoph; Lee, Hyeon-Dong; Lee, Tae-Woo

2018-01-25

Metal halide perovskites (MHPs) have numerous advantages as light emitters such as high photoluminescence quantum efficiency with a direct bandgap, very narrow emission linewidth, high charge-carrier mobility, low energetic disorder, solution processability, simple color tuning, and low material cost. Based on these advantages, MHPs have recently shown unprecedented radical progress (maximum current efficiency from 0.3 to 42.9 cd A -1 ) in the field of light-emitting diodes. However, perovskite light-emitting diodes (PeLEDs) suffer from intrinsic instability of MHP materials and instability arising from the operation of the PeLEDs. Recently, many researchers have devoted efforts to overcome these instabilities. Here, the origins of the instability in PeLEDs are reviewed by categorizing it into two types: instability of (i) the MHP materials and (ii) the constituent layers and interfaces in PeLED devices. Then, the strategies to improve the stability of MHP materials and PeLEDs are critically reviewed, such as A-site cation engineering, Ruddlesden-Popper phase, suppression of ion migration with additives and blocking layers, fabrication of uniform bulk polycrystalline MHP layers, and fabrication of stable MHP nanoparticles. Based on this review of recent advances, future research directions and an outlook of PeLEDs for display applications are suggested. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Modeling Ultraviolet (UV) Light Emitting Diode (LED) Energy Propagation in Reactor Vessels

DTIC Science & Technology

2014-03-27

21 Table 4: UV Mercury Lamps , UV LED Bulbs, and Visible LED Bulb Advantages and Disadvantages...over low pressure mercury lamps include smaller size, minimal start up time, and no hazardous material. Projections show UV LEDs will follow similar

Random laser illumination: an ideal source for biomedical polarization imaging?

NASA Astrophysics Data System (ADS)

Carvalho, Mariana T.; Lotay, Amrit S.; Kenny, Fiona M.; Girkin, John M.; Gomes, Anderson S. L.

2016-03-01

Imaging applications increasingly require light sources with high spectral density (power over spectral bandwidth. This has led in many cases to the replacement of conventional thermal light sources with bright light-emitting diodes (LEDs), lasers and superluminescent diodes. Although lasers and superluminescent diodes appear to be ideal light sources due to their narrow bandwidth and power, however, in the case of full-field imaging, their spatial coherence leads to coherent artefacts, such as speckle, that corrupt the image. LEDs, in contrast, have lower spatial coherence and thus seem the natural choice, but they have low spectral density. Random Lasers are an unconventional type of laser that can be engineered to provide low spatial coherence with high spectral density. These characteristics makes them potential sources for biological imaging applications where specific absorption and reflection are the characteristics required for state of the art imaging. In this work, a Random Laser (RL) is used to demonstrate speckle-free full-field imaging for polarization-dependent imaging in an epi-illumination configuration. We compare LED and RL illumination analysing the resulting images demonstrating that the RL illumination produces an imaging system with higher performance (image quality and spectral density) than that provided by LEDs.

Fully porous GaN p-n junction diodes fabricated by chemical vapor deposition.

PubMed

Bilousov, Oleksandr V; Carvajal, Joan J; Geaney, Hugh; Zubialevich, Vitaly Z; Parbrook, Peter J; Martínez, Oscar; Jiménez, Juan; Díaz, Francesc; Aguiló, Magdalena; O'Dwyer, Colm

2014-10-22

Porous GaN based LEDs produced by corrosion etching techniques demonstrated enhanced light extraction efficiency in the past. However, these fabrication techniques require further postgrown processing steps, which increases the price of the final system. Also, the penetration depth of these etching techniques is limited, and affects not only the semiconductor but also the other elements constituting the LED when applied to the final device. In this paper, we present the fabrication of fully porous GaN p-n junctions directly during growth, using a sequential chemical vapor deposition (CVD) process to produce the different layers that form the p-n junction. We characterized their diode behavior from room temperature to 673 K and demonstrated their ability as current rectifiers, thus proving the potential of these fully porous p-n junctions for diode and LEDs applications. The electrical and luminescence characterization confirm that high electronic quality porous structures can be obtained by this method, and we believe this investigation can be extended to other III-N materials for the development of white light LEDs, or to reduce reflection losses and narrowing the output light cone for improved LED external quantum efficiencies.

Photodynamic therapy using a novel irradiation source, LED lamp, is similarly effective to photodynamic therapy using diode laser or metal-halide lamp on DMBA- and TPA-induced mouse skin papillomas.

PubMed

Takahashi, Hidetoshi; Nakajima, Susumu; Ogasawara, Koji; Asano, Ryuji; Nakae, Yoshinori; Sakata, Isao; Iizuka, Hajime

2014-08-01

Photodynamic therapy (PDT) is useful for superficial skin tumors such as actinic keratosis and Bowen disease. Although PDT is non-surgical and easily-performed treatment modality, irradiation apparatus is large and expensive. Using 7, 12-dimethylbenz[a]anthracene (DMBA) and 12-ο-tetradecanoylphorbol-13-acetate (TPA)-induced mouse skin papilloma model, we compared the efficacy of TONS501- and ALA-PDT with a LED lamp, a diode laser lamp or a metal-halide lamp on the skin tumor regression. TONS501-PDT using 660 nm LED lamp showed anti-tumor effect at 1 day following the irradiation and the maximal anti-tumor effect was observed at 3 days following the irradiation. There was no significant difference in the anti-tumor effects among TONS501-PDT using LED, TONS501-PDT using diode laser, and 5-aminolevulinic acid hydrochloride (ALA)-PDT using metal-halide lamp. Potent anti-tumor effect on DMBA- and TPA-induced mouse skin papilloma was observed by TONS501-PDT using 660 nm LED, which might be more useful for clinical applications. © 2014 Japanese Dermatological Association.

Miniaturized tool for optogenetics based on an LED and an optical fiber interfaced by a silicon housing.

PubMed

Schwaerzle, M; Elmlinger, P; Paul, O; Ruther, P

2014-01-01

This paper reports on the design, simulation, fabrication and characterization of a tool for optogenetic experiments based on a light emitting diode (LED). A minimized silicon (Si) interface houses the LED and aligns it to an optical fiber. With a Si housing size of 550×500×380 μm(3) and an electrical interconnection of the LED by a highly flexible polyimide (PI) ribbon cable is the system very variable. PI cables and Si housings are fabricated using established microsystem technologies. A 270×220×50 μm(3) bare LED chip is flip-chip-bonded onto the PI cable. The Si housing is adhesively attached to the PI cable, thereby hosting the LED in a recess. An opposite recess guides the optical fiber with a diameter of 125 μm. An aperture in-between restricts the emitted LED light to the fiber core. The optical fiber is adhesively fixed into the Si housing recess. An optical output intensity at the fiber end facet of 1.71 mW/mm(2) was achieved at a duty cycle of 10 % and a driving current of 30 mA.

Side-emitting illuminators using LED sources

NASA Astrophysics Data System (ADS)

Zhao, Feng; Van Derlofske, John F.

2003-11-01

This study investigates illuminators composed of light emitting diode (LED) array sources and side-emitting light guides to provide efficient general illumination. Specifically, new geometries are explored to increase the efficiency of current systems while maintaining desired light distribution. LED technology is already successfully applied in many illumination applications, such as traffic signals and liquid crystal display (LCD) backlighting. It provides energy-efficient, small-package, long-life, and color-adjustable illumination. However, the use of LEDs in general illumination is still in its early stages. Current side-emitting systems typically use a light guide with light sources at one end, an end-cap surface at the other end, and light releasing sidewalls. This geometry introduces efficiency loss that can be as high as 40%. The illuminators analyzed in this study use LED array sources along the longitude of a light guide to increase the system efficiency. These new geometries also provide the freedom of elongating the system without sacrificing system efficiency. In addition, alternative geometries can be used to create white light with monochromatic LED sources. As concluded by this study, the side-emitting illuminators using LED sources gives the possibility of an efficient, distribution-controllable linear lighting system.

High-power LED light sources for optical measurement systems operated in continuous and overdriven pulsed modes

NASA Astrophysics Data System (ADS)

Stasicki, Bolesław; Schröder, Andreas; Boden, Fritz; Ludwikowski, Krzysztof

2017-06-01

The rapid progress of light emitting diode (LED) technology has recently resulted in the availability of high power devices with unprecedented light emission intensities comparable to those of visible laser light sources. On this basis two versatile devices have been developed, constructed and tested. The first one is a high-power, single-LED illuminator equipped with exchangeable projection lenses providing a homogenous light spot of defined diameter. The second device is a multi-LED illuminator array consisting of a number of high-power LEDs, each integrated with a separate collimating lens. These devices can emit R, G, CG, B, UV or white light and can be operated in pulsed or continuous wave (CW) mode. Using an external trigger signal they can be easily synchronized with cameras or other devices. The mode of operation and all parameters can be controlled by software. Various experiments have shown that these devices have become a versatile and competitive alternative to laser and xenon lamp based light sources. The principle, design, achieved performances and application examples are given in this paper.

The integration of InGaP LEDs with CMOS on 200 mm silicon wafers

NASA Astrophysics Data System (ADS)

Wang, Bing; Lee, Kwang Hong; Wang, Cong; Wang, Yue; Made, Riko I.; Sasangka, Wardhana Aji; Nguyen, Viet Cuong; Lee, Kenneth Eng Kian; Tan, Chuan Seng; Yoon, Soon Fatt; Fitzgerald, Eugene A.; Michel, Jurgen

2017-02-01

The integration of photonics and electronics on a converged silicon CMOS platform is a long pursuit goal for both academe and industry. We have been developing technologies that can integrate III-V compound semiconductors and CMOS circuits on 200 mm silicon wafers. As an example we present our work on the integration of InGaP light-emitting diodes (LEDs) with CMOS. The InGaP LEDs were epitaxially grown on high-quality GaAs and Ge buffers on 200 mm (100) silicon wafers in a MOCVD reactor. Strain engineering was applied to control the wafer bow that is induced by the mismatch of coefficients of thermal expansion between III-V films and silicon substrate. Wafer bonding was used to transfer the foundry-made silicon CMOS wafers to the InGaP LED wafers. Process trenches were opened on the CMOS layer to expose the underneath III-V device layers for LED processing. We show the issues encountered in the 200 mm processing and the methods we have been developing to overcome the problems.

Design of compact freeform lens for application specific Light-Emitting Diode packaging.

PubMed

Wang, Kai; Chen, Fei; Liu, Zongyuan; Luo, Xiaobing; Liu, Sheng

2010-01-18

Application specific LED packaging (ASLP) is an emerging technology for high performance LED lighting. We introduced a practical design method of compact freeform lens for extended sources used in ASLP. A new ASLP for road lighting was successfully obtained by integrating a polycarbonate compact freeform lens of small form factor with traditional LED packaging. Optical performance of the ASLP was investigated by both numerical simulation based on Monte Carlo ray tracing method and experiments. Results demonstrated that, comparing with traditional LED module integrated with secondary optics, the ASLP had advantages of much smaller size in volume (approximately 1/8), higher system lumen efficiency (approximately 8.1%), lower cost and more convenience for customers to design and assembly, enabling possible much wider applications of LED for general road lighting. Tolerance analyses were also conducted. Installation errors of horizontal and vertical deviations had more effects on the shape and uniformity of radiation pattern compared with rotational deviation. The tolerances of horizontal, vertical and rotational deviations of this lens were 0.11 mm, 0.14 mm and 2.4 degrees respectively, which were acceptable in engineering.

Alternating-Current InGaN/GaN Tunnel Junction Nanowire White-Light Emitting Diodes.

PubMed

Sadaf, S M; Ra, Y-H; Nguyen, H P T; Djavid, M; Mi, Z

2015-10-14

The current LED lighting technology relies on the use of a driver to convert alternating current (AC) to low-voltage direct current (DC) power, a resistive p-GaN contact layer to inject positive charge carriers (holes) for blue light emission, and rare-earth doped phosphors to down-convert blue photons into green/red light, which have been identified as some of the major factors limiting the device efficiency, light quality, and cost. Here, we show that multiple-active region phosphor-free InGaN nanowire white LEDs connected through a polarization engineered tunnel junction can fundamentally address the afore-described challenges. Such a p-GaN contact-free LED offers the benefit of carrier regeneration, leading to enhanced light intensity and reduced efficiency droop. Moreover, through the monolithic integration of p-GaN up and p-GaN down nanowire LED structures on the same substrate, we have demonstrated, for the first time, AC operated LEDs on a Si platform, which can operate efficiently in both polarities (positive and negative) of applied voltage.

Color coded multiple access scheme for bidirectional multiuser visible light communications in smart home technologies

NASA Astrophysics Data System (ADS)

Tiwari, Samrat Vikramaditya; Sewaiwar, Atul; Chung, Yeon-Ho

2015-10-01

In optical wireless communications, multiple channel transmission is an attractive solution to enhancing capacity and system performance. A new modulation scheme called color coded multiple access (CCMA) for bidirectional multiuser visible light communications (VLC) is presented for smart home applications. The proposed scheme uses red, green and blue (RGB) light emitting diodes (LED) for downlink and phosphor based white LED (P-LED) for uplink to establish a bidirectional VLC and also employs orthogonal codes to support multiple users and devices. The downlink transmission for data user devices and smart home devices is provided using red and green colors from the RGB LEDs, respectively, while uplink transmission from both types of devices is performed using the blue color from P-LEDs. Simulations are conducted to verify the performance of the proposed scheme. It is found that the proposed bidirectional multiuser scheme is efficient in terms of data rate and performance. In addition, since the proposed scheme uses RGB signals for downlink data transmission, it provides flicker-free illumination that would lend itself to multiuser VLC system for smart home applications.

Damage of photoreceptor-derived cells in culture induced by light emitting diode-derived blue light

PubMed Central

Kuse, Yoshiki; Ogawa, Kenjiro; Tsuruma, Kazuhiro; Shimazawa, Masamitsu; Hara, Hideaki

2014-01-01

Our eyes are increasingly exposed to light from the emitting diode (LED) light of video display terminals (VDT) which contain much blue light. VDTs are equipped with televisions, personal computers, and smart phones. The present study aims to clarify the mechanism underlying blue LED light-induced photoreceptor cell damage. Murine cone photoreceptor-derived cells (661 W) were exposed to blue, white, or green LED light (0.38 mW/cm2). In the present study, blue LED light increased reactive oxygen species (ROS) production, altered the protein expression level, induced the aggregation of short-wavelength opsins (S-opsin), resulting in severe cell damage. While, blue LED light damaged the primary retinal cells and the damage was photoreceptor specific. N-Acetylcysteine (NAC), an antioxidant, protected against the cellular damage induced by blue LED light. Overall, the LED light induced cell damage was wavelength-, but not energy-dependent and may cause more severe retinal photoreceptor cell damage than the other LED light. PMID:24909301

Analysis of light emitting diode array lighting system based on human vision: normal and abnormal uniformity condition.

PubMed

Qin, Zong; Ji, Chuangang; Wang, Kai; Liu, Sheng

2012-10-08

In this paper, condition for uniform lighting generated by light emitting diode (LED) array was systematically studied. To take human vision effect into consideration, contrast sensitivity function (CSF) was novelly adopted as critical criterion for uniform lighting instead of conventionally used Sparrow's Criterion (SC). Through CSF method, design parameters including system thickness, LED pitch, LED's spatial radiation distribution and viewing condition can be analytically combined. In a specific LED array lighting system (LALS) with foursquare LED arrangement, different types of LEDs (Lambertian and Batwing type) and given viewing condition, optimum system thicknesses and LED pitches were calculated and compared with those got through SC method. Results show that CSF method can achieve more appropriate optimum parameters than SC method. Additionally, an abnormal phenomenon that uniformity varies with structural parameters non-monotonically in LALS with non-Lambertian LEDs was found and analyzed. Based on the analysis, a design method of LALS that can bring about better practicability, lower cost and more attractive appearance was summarized.

Enhanced Phycocyanin Production from Spirulina platensis using Light Emitting Diode

NASA Astrophysics Data System (ADS)

Bachchhav, Manisha Bhanudas; Kulkarni, Mohan Vinayak; Ingale, Arun G.

2017-06-01

This work investigates the performance of different cultivation conditions using Light Emitting Diode (LED) as a light source for the production of phycocyanin from Spirulina platensis. With LEDs under autotrophic conditions, red LED produced maximum amount of biomass (8.95 g/l). As compared to autotrophic cultivation with fluorescent lamp (control), cultivations using LEDs under autotrophic and mixotrophic mode significantly enhanced the phycocyanin content. For autotrophic conditions (with LED) phycocyanin content was in the range of 103-242 mg/g of dry biomass, whereas for mixotrophic conditions (0.1% glucose and LED) it was in the range of 254-380 mg/g of dry biomass. Spirulina cultivated with yellow LED under mixotrophic conditions had 5.4-fold more phycocyanin (380 mg/g of dry biomass) than control (70 mg/g of dry biomass). The present study demonstrates that the LEDs under mixotrophic conditions gave sixfold (2497 mg/l) higher yields of phycocyanin as compared to autotrophic condition under white light (415 mg/l).

Carrier-injection studies in GaN-based light-emitting-diodes

NASA Astrophysics Data System (ADS)

Nguyen, Dinh Chuong; Vaufrey, David; Leroux, Mathieu

2015-09-01

Although p-type GaN has been achieved by Mg doping, the low hole-mobility still remains a difficulty for GaN-based light-emitting diodes (LEDs). Due to the lack of field-dependent-velocity model for holes, in GaN-based LED simulations, the hole mobility is usually supposed to remain constant. However, as the p-GaN-layer conductivity is lower than the n-GaN-layer conductivity, a strong electric-field exists in the p-side of an LED when the applied voltage exceeds the LED's built-in voltage. Under the influence of this field, the mobilities of electrons and holes are expected to decrease. Based on a field-dependent-velocity model that is usually used for narrow-bandgap materials, an LED structure is modelled with three arbitrarily chosen hole saturation-velocities. The results show that a hole saturation-velocity lower than 4x106 cm/s can negatively affect the LED's behaviors.

Reverse leakage current characteristics of InGaN/GaN multiple quantum well ultraviolet/blue/green light-emitting diodes

NASA Astrophysics Data System (ADS)

Zhou, Shengjun; Lv, Jiajiang; Wu, Yini; Zhang, Yuan; Zheng, Chenju; Liu, Sheng

2018-05-01

We investigated the reverse leakage current characteristics of InGaN/GaN multiple quantum well (MQW) near-ultraviolet (NUV)/blue/green light-emitting diodes (LEDs). Experimental results showed that the NUV LED has the smallest reverse leakage current whereas the green LED has the largest. The reason is that the number of defects increases with increasing nominal indium content in InGaN/GaN MQWs. The mechanism of the reverse leakage current was analyzed by temperature-dependent current–voltage measurement and capacitance–voltage measurement. The reverse leakage currents of NUV/blue/green LEDs show similar conduction mechanisms: at low temperatures, the reverse leakage current of these LEDs is attributed to variable-range hopping (VRH) conduction; at high temperatures, the reverse leakage current of these LEDs is attributed to nearest-neighbor hopping (NNH) conduction, which is enhanced by the Poole–Frenkel effect.

Solution-Grown ZnO Films toward Transparent and Smart Dual-Color Light-Emitting Diode.

PubMed

Huang, Xiaohu; Zhang, Li; Wang, Shijie; Chi, Dongzhi; Chua, Soo Jin

2016-06-22

An individual light-emitting diode (LED) capable of emitting different colors of light under different bias conditions not only allows for compact device integration but also extends the functionality of the LED beyond traditional illumination and display. Herein, we report a color-switchable LED based on solution-grown n-type ZnO on p-GaN/n-GaN heterojunction. The LED emits red light with a peak centered at ∼692 nm and a full width at half-maximum of ∼90 nm under forward bias, while it emits green light under reverse bias. These two lighting colors can be switched repeatedly by reversing the bias polarity. The bias-polarity-switched dual-color LED enables independent control over the lighting color and brightness of each emission with two-terminal operation. The results offer a promising strategy toward transparent, miniaturized, and smart LEDs, which hold great potential in optoelectronics and optical communication.

Improved light extraction efficiency of GaN-based flip-chip light-emitting diodes with an antireflective interface layer

NASA Astrophysics Data System (ADS)

Wu, Dongxue; Ma, Ping; Liu, Boting; Zhang, Shuo; Wang, Junxi; Li, Jinmin

2016-05-01

GaN-based flip-chip light-emitting diodes (FC-LEDs) grown on nanopatterned sapphire substrates (NPSS) are fabricated using self-assembled SiO2 nanospheres as masks during inductively coupled plasma etching. By controlling the pattern spacing, epitaxial GaN can be grown from the top or bottom of patterns to obtain two different GaN/substrate interfaces. The optoelectronic characteristics of FC-LED chips with different GaN/sapphire interfaces are studied. The FC-LED with an antireflective interface layer consisting of a NPSS with GaN in the pattern spacings demonstrates better optical properties than the FC-LED with an interface embedded with air voids. Our study indicates that the two types of FC-LEDs grown on NPSS show higher crystal quality and improved electrical and optical characteristics compared with those of FC-LEDs grown on conventional planar sapphire substrates.

Multi-LED parallel transmission for long distance underwater VLC system with one SPAD receiver

NASA Astrophysics Data System (ADS)

Wang, Chao; Yu, Hong-Yi; Zhu, Yi-Jun; Wang, Tao; Ji, Ya-Wei

2018-03-01

In this paper, a multiple light emitting diode (LED) chips parallel transmission (Multi-LED-PT) scheme for underwater visible light communication system with one photon-counting single photon avalanche diode (SPAD) receiver is proposed. As the lamp always consists of multi-LED chips, the data rate could be improved when we drive these multi-LED chips parallel by using the interleaver-division-multiplexing technique. For each chip, the on-off-keying modulation is used to reduce the influence of clipping. Then a serial successive interference cancellation detection algorithm based on ideal Poisson photon-counting channel by the SPAD is proposed. Finally, compared to the SPAD-based direct current-biased optical orthogonal frequency division multiplexing system, the proposed Multi-LED-PT system could improve the error-rate performance and anti-nonlinearity performance significantly under the effects of absorption, scattering and weak turbulence-induced channel fading together.

A New Type Hi-Speed BLDC Control System Base on Indirect Current Control Strategy

NASA Astrophysics Data System (ADS)

Wang, D. P.; Wang, Y. C.; Zhang, F. G.; Jin, S.

2017-05-01

High speed BLDC has the characteristic as larger air gap smaller armature inductance, traditional PWM modulation will produce a great number of high frequency current harmonics which led problem like large torque ripple and serious motor heat. In the meantime traditional PWM modulation use the diode rectifier which cause harmonic pollution in electric power net. To solve the problem above, proposes a new motor controller topology. Using the IGBT device to replace the diode on frequency converter rectifier side, apply the power factor correction technology, reduce the pollution on the grid. Using busbar current modulation on the inverter, driving bridge-arm use 3-phase 6-state open as driving Mode, realize the control on a 10000r/min,10kw BLDC. The results of Simulation on matlab show the topological structure as proposed can effectively improve the network side power factor and reduce the motor armature winding harmonic and motor torque ripple.

Amber light-emitting diode comprising a group III-nitride nanowire active region

DOEpatents

Wang, George T.; Li, Qiming; Wierer, Jr., Jonathan J.; Koleske, Daniel

2014-07-22

A temperature stable (color and efficiency) III-nitride based amber (585 nm) light-emitting diode is based on a novel hybrid nanowire-planar structure. The arrays of GaN nanowires enable radial InGaN/GaN quantum well LED structures with high indium content and high material quality. The high efficiency and temperature stable direct yellow and red phosphor-free emitters enable high efficiency white LEDs based on the RGYB color-mixing approach.

Compact light-emitting-diode sun photometer for atmospheric optical depth measurements.

PubMed

Acharya, Y B; Jayaraman, A; Ramachandran, S; Subbaraya, B H

1995-03-01

A new compact light-emitting diode (LED) sun photometer, in which a LED is used as a spectrally selective photodetector as well as a nonlinear feedback element in the operational amplifier, has been developed. The output voltage that is proportional to the logarithm of the incident solar intensity permits the direct measurement of atmospheric optical depths in selected spectral bands. Measurements made over Ahmedabad, India, show good agreement, within a few percent, of optical depths derived with a LED as a photodetector in a linear mode and with a LED as both a photodetector and a feedback element in an operational amplifier in log mode. The optical depths are also found to compare well with those obtained simultaneously with a conventional filter photometer.

On the Hole Injection for III-Nitride Based Deep Ultraviolet Light-Emitting Diodes.

PubMed

Li, Luping; Zhang, Yonghui; Xu, Shu; Bi, Wengang; Zhang, Zi-Hui; Kuo, Hao-Chung

2017-10-24

The hole injection is one of the bottlenecks that strongly hinder the quantum efficiency and the optical power for deep ultraviolet light-emitting diodes (DUV LEDs) with the emission wavelength smaller than 360 nm. The hole injection efficiency for DUV LEDs is co-affected by the p-type ohmic contact, the p-type hole injection layer, the p-type electron blocking layer and the multiple quantum wells. In this report, we review a large diversity of advances that are currently adopted to increase the hole injection efficiency for DUV LEDs. Moreover, by disclosing the underlying device physics, the design strategies that we can follow have also been suggested to improve the hole injection for DUV LEDs.

276 nm Substrate-Free Flip-Chip AlGaN Light-Emitting Diodes

NASA Astrophysics Data System (ADS)

Hwang, Seongmo; Morgan, Daniel; Kesler, Amanda; Lachab, Mohamed; Zhang, Bin; Heidari, Ahmad; Nazir, Haseeb; Ahmad, Iftikhar; Dion, Joe; Fareed, Qhalid; Adivarahan, Vinod; Islam, Monirul; Khan, Asif

2011-03-01

Lateral-conduction, substrate-free flip-chip (SFFC) light-emitting diodes (LEDs) with peak emission at 276 nm are demonstrated for the first time. The AlGaN multiple quantum well LED structures were grown by metal-organic chemical vapor deposition (MOCVD) on thick-AlN laterally overgrown on sapphire substrates. To fabricate the SFFC LEDs, a newly-developed laser-assisted ablation process was employed to separate the substrate from the LED chips. The chips had physical dimensions of 1100×900 µm2, and were comprised of four devices each with a 100×100 µm2 junction area. Electrical and optical characterization of the devices revealed no noticeable degradation to their performance due to the laser-lift-off process.

On the Hole Injection for III-Nitride Based Deep Ultraviolet Light-Emitting Diodes

PubMed Central

Li, Luping; Zhang, Yonghui; Kuo, Hao-Chung

2017-01-01

The hole injection is one of the bottlenecks that strongly hinder the quantum efficiency and the optical power for deep ultraviolet light-emitting diodes (DUV LEDs) with the emission wavelength smaller than 360 nm. The hole injection efficiency for DUV LEDs is co-affected by the p-type ohmic contact, the p-type hole injection layer, the p-type electron blocking layer and the multiple quantum wells. In this report, we review a large diversity of advances that are currently adopted to increase the hole injection efficiency for DUV LEDs. Moreover, by disclosing the underlying device physics, the design strategies that we can follow have also been suggested to improve the hole injection for DUV LEDs. PMID:29073738

GaN-based light-emitting diodes with graphene/indium tin oxide transparent layer.

PubMed

Lai, Wei-Chih; Lin, Chih-Nan; Lai, Yi-Chun; Yu, Peichen; Chi, Gou Chung; Chang, Shoou-Jinn

2014-03-10

We have demonstrated a gallium nitride (GaN)-based green light-emitting diode (LED) with graphene/indium tin oxide (ITO) transparent contact. The ohmic characteristic of the p-GaN and graphene/ITO contact could be preformed by annealing at 500 °C for 5 min. The specific contact resistance of p-GaN/graphene/ITO (3.72E-3 Ω·cm²) is one order less than that of p-GaN/ITO. In addition, the 20-mA forward voltage of LEDs with graphene/ITO transparent (3.05 V) is 0.09 V lower than that of ITO LEDs (3.14 V). Besides, We have got an output power enhancement of 11% on LEDs with graphene/ITO transparent contact.

Selective epitaxial growth of monolithically integrated GaN-based light emitting diodes with AlGaN/GaN driving transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Zhaojun; Ma, Jun; Huang, Tongde

2014-03-03

In this Letter, we report selective epitaxial growth of monolithically integrated GaN-based light emitting diodes (LEDs) with AlGaN/GaN high-electron-mobility transistor (HEMT) drivers. A comparison of two integration schemes, selective epitaxial removal (SER), and selective epitaxial growth (SEG) was made. We found the SER resulted in serious degradation of the underlying LEDs in a HEMT-on-LED structure due to damage of the p-GaN surface. The problem was circumvented using the SEG that avoided plasma etching and minimized device degradation. The integrated HEMT-LEDs by SEG exhibited comparable characteristics as unintegrated devices and emitted modulated blue light by gate biasing.

Improved output power of GaN-based light-emitting diodes grown on a nanopatterned sapphire substrate

NASA Astrophysics Data System (ADS)

Chan, Chia-Hua; Hou, Chia-Hung; Tseng, Shao-Ze; Chen, Tsing-Jen; Chien, Hung-Ta; Hsiao, Fu-Li; Lee, Chien-Chieh; Tsai, Yen-Ling; Chen, Chii-Chang

2009-07-01

This letter describes the improved output power of GaN-based light-emitting diodes (LEDs) formed on a nanopatterned sapphire substrate (NPSS) prepared through etching with a self-assembled monolayer of 750-nm-diameter SiO2 nanospheres used as the mask. The output power of NPSS LEDs was 76% greater than that of LEDs on a flat sapphire substrate. Three-dimensional finite-difference time-domain calculation predicted a 40% enhancement in light extraction efficiency of NPSS LEDs. In addition, the reduction of full widths at half maximum in the ω-scan rocking curves for the (0 0 2) and (1 0 2) planes of GaN on NPSS suggested improved crystal quality.

Electrical and Luminescent Properties of Color-Changeable Organic Electroluminescent Diode Using Squarylium Dyes

NASA Astrophysics Data System (ADS)

Mori, Tatsuo; Miyachi, Kiyokazu; Kichimi, Tomoaki; Mizutani, Teruyoshi

1994-12-01

The organic electoluminescent diode (LED) with squarylium (Sq) dye-doped Alq3 changes color upon application of voltage (current). The luminescent color from the organic LED changes from red (electroluminescence (EL) of Sq dye) at low voltage to light green (EL of Alq3) at high voltage. We studied the EL efficiency and EL spectrum of organic Sq-doped Alq3 LED with various doping positions in the emission layer. Consequentially, it was clarified that Sq doping near TPD considerably reduced the EL efficiency. The EL mechanism of the organic LED was concluded to be associated with the energy transfer from the excited Alq3 to the guest dye and hole trapping of the guest dye in Alq3.

White Light–Emitting Diodes (LEDs) at Domestic Lighting Levels and Retinal Injury in a Rat Model

PubMed Central

Shang, Yu-Man; Wang, Gen-Shuh; Sliney, David; Lee, Li-Ling

2013-01-01

Background: Light-emitting diodes (LEDs) deliver higher levels of blue light to the retina than do conventional domestic light sources. Chronic exposure to high-intensity light (2,000–10,000 lux) has previously been found to result in light-induced retinal injury, but chronic exposure to relatively low-intensity (750 lux) light has not been previously assessed with LEDs in a rodent model. Objective: We examined LED-induced retinal neuronal cell damage in the Sprague-Dawley rat using functional, histological, and biochemical measurements. Methods: We used blue LEDs (460 nm) and full-spectrum white LEDs, coupled with matching compact fluorescent lights, for exposures. Pathological examinations included electroretinogram, hematoxylin and eosin (H&E) staining, immunohistochemistry (IHC), and transmission electron microscopy (TEM). We also measured free radical production in the retina to determine the oxidative stress level. Results: H&E staining and TEM revealed apoptosis and necrosis of photoreceptors, which indicated blue-light induced photochemical injury of the retina. Free radical production in the retina was increased in LED-exposed groups. IHC staining demonstrated that oxidative stress was associated with retinal injury. Although we found serious retinal light injury in LED groups, the compact fluorescent lamp (CFL) groups showed moderate to mild injury. Conclusion: Our results raise questions about adverse effects on the retina from chronic exposure to LED light compared with other light sources that have less blue light. Thus, we suggest a precautionary approach with regard to the use of blue-rich “white” LEDs for general lighting. Citation: Shang YM, Wang GS, Sliney D, Yang CH, Lee LL. 2014. White light–emitting diodes (LEDs) at domestic lighting levels and retinal injury in a rat model. Environ Health Perspect 122:269–276; http://dx.doi.org/10.1289/ehp.1307294 PMID:24362357

Use of Occupancy Sensors in LED Parking Lot and Garage Applications: Early Experiences

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kinzey, Bruce R.; Myer, Michael; Royer, Michael P.

2012-11-07

Occupancy sensor systems are gaining traction as an effective technological approach to reducing energy use in exterior commercial lighting applications. Done correctly, occupancy sensors can substantially enhance the savings from an already efficient lighting system. However, this technology is confronted by several potential challenges and pitfalls that can leave a significant amount of the prospective savings on the table. This report describes anecdotal experiences from field installations of occupancy sensor controlled light-emitting diode (LED) lighting at two parking structures and two parking lots. The relative levels of success at these installations reflect a marked range of potential outcomes: from anmore » additional 76% in energy savings to virtually no additional savings. Several issues that influenced savings were encountered in these early stage installations and are detailed in the report. Ultimately, care must be taken in the design, selection, and commissioning of a sensor-controlled lighting installation, else the only guaranteed result may be its cost.« less

Visible light communication technology for fine-grained indoor localization

NASA Astrophysics Data System (ADS)

Vieira, M.; Vieira, M. A.; Louro, P.; Fantoni, A.; Vieira, P.

2018-02-01

This paper focuses on designing and analysing a visible light based communication and positioning system. The indoor positioning system uses trichromatic white Light Emitting Diodes (LEDs), both for illumination purposes and as transmitters, and an optical processor, based on a-SiC:H technology, as mobile receiver. On-Off Keying (OOK) modulation scheme is used, proving a good trade-off between system performance and implementation complexity. In the following, the relationship between the transmitted data and the received output levels is decoded. LED bulbs work as transmitters, sending information together with different identifiers, IDs, related to their physical locations. Square and diamond topologies for the unit cell are analyzed, and a 2D localization design, demonstrated by a prototype implementation, is presented. Fine-grained indoor localization is tested. The received signal is used in coded multiplexing techniques for supporting communications and navigation concomitantly on the same channel. The location and motion information is found by mapping the position and estimating the location areas.

High-Modulation-Speed LEDs Based on III-Nitride

NASA Astrophysics Data System (ADS)

Chen, Hong

III-nitride InGaN light-emitting diodes (LEDs) enable wide range of applications in solid-state lighting, full-color displays, and high-speed visible-light communication. Conventional InGaN quantum well LEDs grown on polar c-plane substrate suffer from quantum confined Stark effect due to the large internal polarization-related fields, leading to a reduced radiative recombination rate and device efficiency, which limits the performance of InGaN LEDs in high-speed communication applications. To circumvent these negative effects, non-trivial-cavity designs such as flip-chip LEDs, metallic grating coated LEDs are proposed. This oral defense will show the works on the high-modulation-speed LEDs from basic ideas to applications. Fundamental principles such as rate equations for LEDs/laser diodes (LDs), plasmonic effects, Purcell effects will be briefly introduced. For applications, the modal properties of flip-chip LEDs are solved by implementing finite difference method in order to study the modulation response. The emission properties of highly polarized InGaN LEDs coated by metallic gratings are also investigated by finite difference time domain method.

Frequency-Downconversion Stability of PMMA Coatings in Hybrid White Light-Emitting Diodes

NASA Astrophysics Data System (ADS)

Caruso, Fulvio; Mosca, Mauro; Rinella, Salvatore; Macaluso, Roberto; Calì, Claudio; Saiano, Filippo; Feltin, Eric

2016-01-01

We report on the properties of a poly(methyl methacrylate)-based coating used as a host for an organic dye in hybrid white light-emitting diodes. The device is composed by a pump source, which is a standard inorganic GaN/InGaN blue light-emitting diode (LED) emitting at around 450 nm, and a spin-coated conversion layer making use of Lumogen® F Yellow 083. Under prolonged irradiation, the coating exhibits significant bleaching, thus degrading the color rendering performance of the LED. We present experimental results that confirm that the local temperature rise of the operating diode does not affect the conversion layer. It is also proven that, during the test, the photostability of the organic dye is compromised, resulting in a chromatic shift from Commission Internationale de l'Eclairage (CIE) ( x; y) coordinates (0.30;0.39) towards the color of the pump (0.15;0.04). Besides photodegradation of the dye, we address a phenomenon attributed to modification of the polymer matrix activated by the LED's blue light energy as confirmed by ultraviolet-visible and Fourier-transform infrared spectroscopic analyses. Three methods for improving the overall stability of the organic coating are presented.

The High-efficiency LED Driver for Visible Light Communication Applications.

PubMed

Gong, Cihun-Siyong Alex; Lee, Yu-Chen; Lai, Jyun-Liang; Yu, Chueh-Hao; Huang, Li Ren; Yang, Chia-Yen

2016-08-08

This paper presents a LED driver for VLC. The main purpose is to solve the low data rate problem used to be in switching type LED driver. The GaN power device is proposed to replace the traditional silicon power device of switching LED driver for the purpose of increasing switching frequency of converter, thereby increasing the bandwidth of data transmission. To achieve high efficiency, the diode-connected GaN power transistor is utilized to replace the traditional ultrafast recovery diode used to be in switching type LED driver. This work has been experimentally evaluated on 350-mA output current. The results demonstrate that it supports the data of PWM dimming level encoded in the PPM scheme for VLC application. The experimental results also show that system's efficiency of 80.8% can be achieved at 1-Mb/s data rate.

Mn2- x Y x (MoO4)3 Phosphor Excited by UV GaN-Based Light-Emitting Diode for White Emission

NASA Astrophysics Data System (ADS)

Chen, Lung-Chien; Tseng, Zong-Liang; Hsu, Ting-Chun; Yang, Shengyi; Chen, Yuan-Bin

2017-04-01

One option for low-cost white light-emitting diodes (LEDs) is the combination of a near-ultraviolet (UV) LED chip (382 nm) and a single phosphor. Such Mn2- x Y x (MoO4)3 single phosphors have been fabricated by a simple solid-state reaction route and their emission color tuned by controlling the Mn doping amount. The chromaticity coordinates of the white light emitted by the UV GaN LED with the MnY(MoO4)3 phosphor were x = 0.5204 and y = 0.4050 [correlated color temperature (CCT) = 7958 K].

Noniterative algorithm for improving the accuracy of a multicolor-light-emitting-diode-based colorimeter.

PubMed

Yang, Pao-Keng

2012-05-01

We present a noniterative algorithm to reliably reconstruct the spectral reflectance from discrete reflectance values measured by using multicolor light emitting diodes (LEDs) as probing light sources. The proposed algorithm estimates the spectral reflectance by a linear combination of product functions of the detector's responsivity function and the LEDs' line-shape functions. After introducing suitable correction, the resulting spectral reflectance was found to be free from the spectral-broadening effect due to the finite bandwidth of LED. We analyzed the data for a real sample and found that spectral reflectance with enhanced resolution gives a more accurate prediction in the color measurement.

Noniterative algorithm for improving the accuracy of a multicolor-light-emitting-diode-based colorimeter

NASA Astrophysics Data System (ADS)

Yang, Pao-Keng

2012-05-01

We present a noniterative algorithm to reliably reconstruct the spectral reflectance from discrete reflectance values measured by using multicolor light emitting diodes (LEDs) as probing light sources. The proposed algorithm estimates the spectral reflectance by a linear combination of product functions of the detector's responsivity function and the LEDs' line-shape functions. After introducing suitable correction, the resulting spectral reflectance was found to be free from the spectral-broadening effect due to the finite bandwidth of LED. We analyzed the data for a real sample and found that spectral reflectance with enhanced resolution gives a more accurate prediction in the color measurement.

Compact light-emitting diode lighting ring for video-assisted thoracic surgery.

PubMed

Lu, Ming-Kuan; Chang, Feng-Chen; Wang, Wen-Zhe; Hsieh, Chih-Cheng; Kao, Fu-Jen

2014-01-01

In this work, a foldable ring-shaped light-emitting diode (LED) lighting assembly, designed to attach to a rubber wound retractor, is realized and tested through porcine animal experiments. Enabled by the small size and the high efficiency of LED chips, the lighting assembly is compact, flexible, and disposable while providing direct and high brightness lighting for more uniform background illumination in video-assisted thoracic surgery (VATS). When compared with a conventional fiber bundle coupled light source that is usually used in laparoscopy and endoscopy, the much broader solid angle of illumination enabled by the LED assembly allows greatly improved background lighting and imaging quality in VATS.

Organometal halide perovskite light-emitting diodes with laminated carbon nanotube electrodes

NASA Astrophysics Data System (ADS)

Shan, Xin; Bade, Sri Ganesh R.; Geske, Thomas; Davis, Melissa; Smith, Rachel; Yu, Zhibin

2017-08-01

Organometal halide perovskite light-emitting diodes (LEDs) with laminated carbon nanotube (CNT) electrodes are reported. The LEDs have an indium tin oxide (ITO) bottom electrode, a screen printed methylammonium lead tribromide (MAPbBr3)/polymer composite thin film as the emissive layer, and laminated CNT as the top electrode. The devices can be turned on at 2.2 V, reaching a brightness of 4,960 cd m-2 and a current efficiency of 1.54 cd A-1 at 6.9 V. The greatly simplified fabrication process in this work can potentially lead to the scalable manufacturing of large size and low cost LED panels in the future.

Ag/SiO2 nanoparticle-based plasmonic enhancement of light output in nanohole-patterned InGaN/GaN blue light-emitting diodes

NASA Astrophysics Data System (ADS)

Yun, Jin-Hyeon; Kim, Kyu Cheol; Yu, Yeon Tae; Yang, Jin Kyu; Polyakov, Alexander Y.; Lee, In-Hwan

2017-10-01

Improved performance of blue InGaN/GaN light-emitting diodes (LEDs) is realized as a result of fabricating nanohole patterns in the p-GaN contact layer and embedding the nanoholes with Ag/SiO2 nanoparticles to generate localized surface plasmons (LSPs). Good matching between LSP resonance energy and LED emission energy together with the close proximity between nanoparticles and the active region results in strong coupling between them. Consequently, the photoluminescence and electroluminescence intensities increased to 1.75 and 1.10, respectively, compared with nanohole patterned reference LEDs.

Laser-induced periodic structures for light extraction efficiency enhancement of GaN-based light emitting diodes.

PubMed

Chen, Jiun-Ting; Lai, Wei-Chih; Kao, Yu-Jui; Yang, Ya-Yu; Sheu, Jinn-Kong

2012-02-27

The laser-induced periodic surface structure technique was used to form simultaneously dual-scale rough structures (DSRS) with spiral-shaped nanoscale structure inside semi-spherical microscale holes on p-GaN surface to improve the light-extraction efficiency of light-emitting diodes (LEDs). The light output power of DSRS-LEDs was 30% higher than that of conventional LEDs at an injection current of 20 mA. The enhancement in the light output power could be attributed to the increase in the probability of photons to escape from the increased surface area of textured p-GaN surface.

Using light emitting diodes in traffic signals : final report.

DOT National Transportation Integrated Search

1998-07-01

In 1993, the Oregon Department of Transportation (ODOT) began testing red light emitting diodes (LED's) as a replacement to the incandescent lamps in vehicular and pedestrian signals. Field performance was found to be reliable and subsequently ODOT b...

A comparison of the antibacterial activity of the two methods of photodynamic therapy (using diode laser 810 nm and LED lamp 630 nm) against Enterococcus faecalis in extracted human anterior teeth.

PubMed

Asnaashari, Mohammad; Mojahedi, Seyed Masoud; Asadi, Zahra; Azari-Marhabi, Saranaz; Maleki, Alireza

2016-03-01

Failure of endodontic treatment is usually due to an inadequate disinfection of the root canal system. Enterococcus faecalis has been widely used as a valuable microbiological marker for in-vitro studies because of its ability to colonize in a biofilm like style in root canals, invading dentinal tubules and resistance to some endodontic treatments. The aim of this study was to investigate the antibacterial effects of two methods of photodynamic therapy using a light emitting diode lamp (LED lamp, 630 nm) and a diode laser (810 nm) on E. faecalis biofilms in anterior extracted human teeth. Fifty six single-rooted extracted teeth were used in this study. After routine root canal cleansing, shaping and sterilization, the teeth were incubated with E. faecalis for a period of two weeks. Teeth were then divided into two experimental groups (nu=23) and two control groups (nu=5). Teeth in one experimental group were exposed to a diode laser (810 nm), and in the other group samples were exposed to a LED lamp (630 nm). Intracanal bacterial sampling was done, and bacterial survival rate was then evaluated for each group. The Colony Forming Unit (CFU) in LED group (log10 CFUs=4.88±0.82) was significantly lower than the laser group (log CFUs=5.49±0.71) (p value=0.021). CFUs in positive control group (Log10 CFUs=10.96±0.44) were significantly higher than the treatment group (p˂0.001). No bacterial colony was found in negative control group. The results of this research show that photodynamic therapy could be an effective supplement in root canal disinfection. PDT using LED lamp was more effective than diode laser 810 nm in reducing CFUs of E. faecalis in human teeth. Copyright © 2015 Elsevier B.V. All rights reserved.

Light output improvement of GaN-based light-emitting diodes grown on Si (111) by a via-thin-film structure

NASA Astrophysics Data System (ADS)

Li, Zengcheng; Feng, Bo; Deng, Biao; Liu, Legong; Huang, Yingnan; Feng, Meixin; Zhou, Yu; Zhao, Hanmin; Sun, Qian; Wang, Huaibing; Yang, Xiaoli; Yang, Hui

2018-04-01

This work reports the fabrication of via-thin-film light-emitting diode (via-TF-LED) to improve the light output power (LOP) of blue/white GaN-based LEDs grown on Si (111) substrates. The as-fabricated via-TF-LEDs were featured with a roughened n-GaN surface and the p-GaN surface bonded to a wafer carrier with a silver-based reflective electrode, together with an array of embedded n-type via pillar metal contact from the p-GaN surface etched through the multiple-quantum-wells (MQWs) into the n-GaN layer. When operated at 350 mA, the via-TF-LED gave an enhanced blue LOP by 7.8% and over 3.5 times as compared to the vertical thin-film LED (TF-LED) and the conventional lateral structure LED (LS-LED). After covering with yellow phosphor that converts some blue photons into yellow light, the via-TF-LED emitted an enhanced white luminous flux by 13.5% and over 5 times, as compared with the white TF-LED and the white LS-LED, respectively. The significant LOP improvement of the via-TF-LED was attributed to the elimination of light absorption by the Si (111) epitaxial substrate and the finger-like n-electrodes on the roughened emitting surface. Project supported by the National Key R&D Program (Nos. 2016YFB0400100, 2016YFB0400104), the National Natural Science Foundation of China (Nos. 61534007, 61404156, 61522407, 61604168, 61775230), the Key Frontier Scientific Research Program of the Chinese Academy of Sciences (No. QYZDB-SSW-JSC014), the Science and Technology Service Network Initiative of the Chinese Academy of Sciences, the Key R&D Program of Jiangsu Province (No. BE2017079), the Natural Science Foundation of Jiangsu Province (No. BK20160401), and the China Postdoctoral Science Foundation (No. 2016M591944). This work was also supported by the Open Fund of the State Key Laboratory of Luminescence and Applications (No. SKLA-2016-01), the Open Fund of the State Key Laboratory on Integrated Optoelectronics (Nos. IOSKL2016KF04, IOSKL2016KF07), and the Seed Fund from SINANO, CAS (No. Y5AAQ51001).

Improving confocal microscopy with solid-state semiconductor excitation sources

NASA Astrophysics Data System (ADS)

Sivers, Nelson L.

To efficiently excite the fluorescent dyes used in imaging biological samples with a confocal microscope, the wavelengths of the exciting laser must be near the fluorochrome absorption peak. However, this causes imaging problems when the fluorochrome absorption and emission spectra overlap significantly, i.e. have small Stokes shifts, which is the case for most fluorochromes that emit in the red to infrared. As a result, the reflected laser excitation cannot be distinguished from the information-containing fluorescence signal. However, cryogenically cooling the exciting laser diode enabled the laser emission wavelengths to be tuned to shorter wavelengths, decreasing the interference between the laser and the fluorochrome's fluorescence. This reduced the amount of reflected laser light in the confocal image. However, the cooled laser diode's shorter wavelength signal resulted in slightly less efficient fluorochrome excitation. Spectrophotometric analysis showed that as the laser diodes were cooled, their output power increased, which more than compensated for the lower fluorochrome excitation and resulted in significantly more intense fluorescence. Thus, by tuning the laser diode emission wavelengths away from the fluorescence signal, less reflected laser light and more fluorescence information reached the detector, creating images with better signal to noise ratios. Additionally, new, high, luminous flux, light-emitting diodes (LEDs) are now powerful enough to create confocal fluorescence signals comparable to those produced by the traditional laser excitation sources in fluorescence confocal microscopes. The broader LED spectral response effectively excited the fluorochrome, yet was spectrally limited enough for standard filter sets to separate the LED excitation from the fluorochrome fluorescence signal. Spectrophotometric analysis of the excitation and fluorescence spectra of several fluorochromes showed that high-powered, LED-induced fluorescence contained the same spectral information and could be more intense than that produced by lasers. An alternative, LED-based, confocal microscope is proposed in this thesis that would be capable of exciting multiple fluorochromes in a single specimen, producing images of several distinct cellular components simultaneously. The inexpensive, LED-based, confocal microscope would require lower peak excitation intensities to produce fluorescence signals equal to those produced by laser excitation, reducing cellular damage and slowing fluorochrome photobleaching.

Comparative effectiveness of light emitting diodes (LEDs) and Lasers in near infrared photoimmunotherapy

PubMed Central

Sato, Kazuhide; Watanabe, Rira; Hanaoka, Hirofumi; Nakajima, Takahito; Choyke, Peter L.; Kobayashi, Hisataka

2016-01-01

Near infrared photoimmunotherapy (NIR-PIT) is a new cancer treatment that combines the specificity of antibodies for targeting tumors with the toxicity induced by photosensitizers after exposure to near infrared (NIR) light. Herein we compare two NIR-light sources; light emitting diodes (LEDs) and Lasers, for their effectiveness in NIR-PIT. A photosensitizer, IRDye-700DX, conjugated to panitumumab (pan-IR700), was incubated with EGFR-expressing A431 and MDA-MB-468-luc cells. NIR-light was provided by LEDs or Lasers at the same light dose. Laser-light produced more cytotoxicity and greater reductions in IR700-fluorescence intensity than LED-light. Laser-light also produced more cytotoxicity in vivo in both cell lines. Assessment of super-enhanced permeability and retention (SUPR) effects were stronger with Laser than LED. These results suggest that Laser-light produced significantly more cytotoxic effects compared to LEDs. Although LED is less expensive, Laser-light produces superior results in NIR-PIT. PMID:26885688

Comparative effectiveness of light emitting diodes (LEDs) and Lasers in near infrared photoimmunotherapy.

PubMed

Sato, Kazuhide; Watanabe, Rira; Hanaoka, Hirofumi; Nakajima, Takahito; Choyke, Peter L; Kobayashi, Hisataka

2016-03-22

Near infrared photoimmunotherapy (NIR-PIT) is a new cancer treatment that combines the specificity of antibodies for targeting tumors with the toxicity induced by photosensitizers after exposure to near infrared (NIR) light. Herein we compare two NIR-light sources; light emitting diodes (LEDs) and Lasers, for their effectiveness in NIR-PIT. A photosensitizer, IRDye-700DX, conjugated to panitumumab (pan-IR700), was incubated with EGFR-expressing A431 and MDA-MB-468-luc cells. NIR-light was provided by LEDs or Lasers at the same light dose. Laser-light produced more cytotoxicity and greater reductions in IR700-fluorescence intensity than LED-light. Laser-light also produced more cytotoxicity in vivo in both cell lines. Assessment of super-enhanced permeability and retention (SUPR) effects were stronger with Laser than LED. These results suggest that Laser-light produced significantly more cytotoxic effects compared to LEDs. Although LED is less expensive, Laser-light produces superior results in NIR-PIT.

Recycled Thermal Energy from High Power Light Emitting Diode Light Source.

PubMed

Ji, Jae-Hoon; Jo, GaeHun; Ha, Jae-Geun; Koo, Sang-Mo; Kamiko, Masao; Hong, JunHee; Koh, Jung-Hyuk

2018-09-01

In this research, the recycled electrical energy from wasted thermal energy in high power Light Emitting Diode (LED) system will be investigated. The luminous efficiency of lights has been improved in recent years by employing the high power LED system, therefore energy efficiency was improved compared with that of typical lighting sources. To increase energy efficiency of high power LED system further, wasted thermal energy should be re-considered. Therefore, wasted thermal energy was collected and re-used them as electrical energy. The increased electrical efficiency of high power LED devices was accomplished by considering the recycled heat energy, which is wasted thermal energy from the LED. In this work, increased electrical efficiency will be considered and investigated by employing the high power LED system, which has high thermal loss during the operating time. For this research, well designed thermoelement with heat radiation system was employed to enhance the collecting thermal energy from the LED system, and then convert it as recycled electrical energy.

Photosynthesis under artificial light: the shift in primary and secondary metabolism

PubMed Central

Darko, Eva; Heydarizadeh, Parisa; Schoefs, Benoît; Sabzalian, Mohammad R.

2014-01-01

Providing an adequate quantity and quality of food for the escalating human population under changing climatic conditions is currently a great challenge. In outdoor cultures, sunlight provides energy (through photosynthesis) for photosynthetic organisms. They also use light quality to sense and respond to their environment. To increase the production capacity, controlled growing systems using artificial lighting have been taken into consideration. Recent development of light-emitting diode (LED) technologies presents an enormous potential for improving plant growth and making systems more sustainable. This review uses selected examples to show how LED can mimic natural light to ensure the growth and development of photosynthetic organisms, and how changes in intensity and wavelength can manipulate the plant metabolism with the aim to produce functionalized foods. PMID:24591723

Three-dimensional direct laser written graphitic electrical contacts to randomly distributed components

NASA Astrophysics Data System (ADS)

Dorin, Bryce; Parkinson, Patrick; Scully, Patricia

2018-04-01

The development of cost-effective electrical packaging for randomly distributed micro/nano-scale devices is a widely recognized challenge for fabrication technologies. Three-dimensional direct laser writing (DLW) has been proposed as a solution to this challenge, and has enabled the creation of rapid and low resistance graphitic wires within commercial polyimide substrates. In this work, we utilize the DLW technique to electrically contact three fully encapsulated and randomly positioned light-emitting diodes (LEDs) in a one-step process. The resolution of the contacts is in the order of 20 μ m, with an average circuit resistance of 29 ± 18 kΩ per LED contacted. The speed and simplicity of this technique is promising to meet the needs of future microelectronics and device packaging.

LED Surgical Task Lighting Scoping Study: A Hospital Energy Alliance Project

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tuenge, Jason R.

Tungsten-halogen (halogen) lamps have traditionally been used to light surgical tasks in hospitals, even though they are in many respects ill-suited to the application due to the large percentage of radiant energy outside the visible spectrum and issues with color rendering/quality. Light-emitting diode (LED) technology offers potential for adjustable color and improved color rendition/quality, while simultaneously reducing side-effects from non-visible radiant energy. It also has the potential for significant energy savings, although this is a fairly narrow application in the larger commercial building energy use sector. Based on analysis of available products and Hospital Energy Alliance member interest, it ismore » recommended that a product specification and field measurement procedure be developed for implementation in demonstration projects.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, Gyeong Won; Shim, Jong-In; Shin, Dong-Soo, E-mail: dshin@hanyang.ac.kr

While there have been many discussions on the standard Si pn-diodes, little attention has been paid and confusion still arises on the ideality factor of the radiative recombination current in semiconductor light-emitting diodes (LEDs). In this letter, we theoretically demonstrate and experimentally confirm by using blue and infrared semiconductor LEDs that the ideality factor of the radiative recombination current is unity especially for low-current-density ranges. We utilize the data of internal quantum efficiency measured by the temperature-dependent electroluminescence to separate the radiative current component from the total current.

Cost-utility analysis of LED fluorescence microscopy in the diagnosis of pulmonary tuberculosis in Indian settings.

PubMed

Kelly, V; Sagili, K D; Satyanarayana, S; Reza, L W; Chadha, S S; Wilson, N C

2015-06-01

With support from the Stop TB Partnership's TB REACH Wave 2 Grant, diagnostic microscopy services for tuberculosis (TB) were upgraded from conventional Ziehl-Neelsen (ZN) based sputum microscopy to light emitting diode technology-based fluorescence microscopy (LED FM) in 200 high-workload microscopy centres in India as a pilot intervention. To evaluate the cost-effectiveness of LED-FM over conventional ZN microscopy to inform further scale-up. A decision-tree model was constructed to assess the cost utility of LED FM over ZN microscopy. The results were summarised using incremental cost-effectiveness ratio (ICER); one-way and probabilistic sensitivity analyses were also conducted to address uncertainty within the model. Data were analysed from 200 medical colleges in 2011 and 2012, before and after the introduction of LED microscopes. A full costing analysis was carried out from the perspective of a national TB programme. The ICER was calculated at US$14.64 per disability-adjusted life-year, with an 82% probability of being cost-effective at a willingness-to-pay threshold equivalent to Indian gross domestic product per capita. LED FM is a cost-effective intervention for detecting TB cases in India at high-workload medical college settings.

Complete indium-free CW 200W passively cooled high power diode laser array using double-side cooling technology

NASA Astrophysics Data System (ADS)

Wang, Jingwei; Zhu, Pengfei; Liu, Hui; Liang, Xuejie; Wu, Dihai; Liu, Yalong; Yu, Dongshan; Zah, Chung-en; Liu, Xingsheng

2017-02-01

High power diode lasers have been widely used in many fields. To meet the requirements of high power and high reliability, passively cooled single bar CS-packaged diode lasers must be robust to withstand thermal fatigue and operate long lifetime. In this work, a novel complete indium-free double-side cooling technology has been applied to package passively cooled high power diode lasers. Thermal behavior of hard solder CS-package diode lasers with different packaging structures was simulated and analyzed. Based on these results, the device structure and packaging process of double-side cooled CS-packaged diode lasers were optimized. A series of CW 200W 940nm high power diode lasers were developed and fabricated using hard solder bonding technology. The performance of the CW 200W 940nm high power diode lasers, such as output power, spectrum, thermal resistance, near field, far field, smile, lifetime, etc., is characterized and analyzed.

Effect of Dopant Activation on Device Characteristics of InGaN-based Light Emitting Diodes

NASA Astrophysics Data System (ADS)

Lacroce, Nicholas; Liu, Guangyu; Tan, Chee-Keong; Arif, Ronald A.; Lee, Soo Min; Tansu, Nelson

2015-03-01

Achieving high uniformity in growths and device characteristics of InGaN-based light-emitting diodes (LEDs) is important for large scale manufacturing. Dopant activation and maintaining control of variables affecting dopant activation are critical steps in the InGaN-based light emitting diodes (LEDs) fabrication process. In the epitaxy of large scale production LEDs, in-situ post-growth annealing is used for activating the Mg acceptor dopant in the p-AlGaN and p-GaN of the LEDs. However, the annealing temperature varies with respect to position in the reactor chamber, leading to severe uniform dopant activation issue across the devices. Thus, it is important to understand how the temperature gradient and the resulting variance in Mg acceptor activation will alter the device properties. In this work, we examine the effect of varying p-type doping levels in the p-GaN layers and AlGaN electron blocking layer of the GaN LEDs on the optoelectronic properties including the band profile, carrier concentration, current density, output power and quantum efficiency. By understanding the variations and its effect, the identification of the most critical p-type doping layer strategies to address this variation will be clarified.

Enhanced wall-plug efficiency in AlGaN-based deep-ultraviolet light-emitting diodes with uniform current spreading p-electrode structures

NASA Astrophysics Data System (ADS)

Hao, Guo-Dong; Taniguchi, Manabu; Tamari, Naoki; Inoue, Shin-ichiro

2016-06-01

The current crowding is an especially severe issue in AlGaN-based deep-ultraviolet (DUV) light-emitting diodes (LEDs) because of the low conductivity of the n-AlGaN cladding layer that has a high Al fraction. We theoretically investigated the improvement in internal quantum efficiency and total resistances in DUV-LEDs with an emission wavelength of 265 nm by a well-designed p-electrode geometry to produce uniform current spreading. As a result, the wall-plug efficiency was enhanced by a factor of 60% at an injection current of 350 mA in the designed uniform-current-spreading p-electrode LED when compared with an LED with a conventional cross-bar p-electrode pattern.

Effect of hole transport on performance of infrared type-II superlattice light emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lin, Youxi; Suchalkin, Sergey; Kipshidze, Gela

2015-04-28

The effect of hole transport on the performance of infrared light emitting diodes (LED) was investigated. The active area of the LEDs comprised two type-II superlattices with different periods and widths connected in series. Electroluminescence spectra of the devices with different positions of long wave and mid wave superlattice sections were mostly contributed by the superlattice closest to the p-contact. The experimental results indicate that due to suppressed vertical hole transport, the recombination of electrically injected electrons and holes in a type II superlattice LED active region takes place within a few superlattice periods near p-barrier. Possible reason for themore » effect is reduction of hole diffusion coefficient in an active area of a superlattice LED under bias.« less

Effect of threading defects on InGaN /GaN multiple quantum well light emitting diodes

NASA Astrophysics Data System (ADS)

Ferdous, M. S.; Wang, X.; Fairchild, M. N.; Hersee, S. D.

2007-12-01

Photoelectrochemical etching was used to measure the threading defect (TD) density in InGaN multiple quantum well light-emitting diodes (LEDs) fabricated from commercial quality epitaxial wafers. The TD density was measured in the LED active region and then correlated with the previously measured characteristics of these LEDs. It was found that the reverse leakage current increased exponentially with TD density. The temperature dependence of this dislocation-related leakage current was consistent with a hopping mechanism at low reverse-bias voltage and Poole-Frenkel emission at higher reverse-bias voltage. The peak intensity and spectral width of the LED electroluminescence were found to be only weakly dependent on TD density for the measured TD range of 1×107-2×108cm-2.

Effect of gold wire bonding process on angular correlated color temperature uniformity of white light-emitting diode.

PubMed

Wu, Bulong; Luo, Xiaobing; Zheng, Huai; Liu, Sheng

2011-11-21

Gold wire bonding is an important packaging process of lighting emitting diode (LED). In this work, we studied the effect of gold wire bonding on the angular uniformity of correlated color temperature (CCT) in white LEDs whose phosphor layers were coated by freely dispersed coating process. Experimental study indicated that different gold wire bonding impacts the geometry of phosphor layer, and it results in different fluctuation trends of angular CCT at different spatial planes in one LED sample. It also results in various fluctuating amplitudes of angular CCT distributions at the same spatial plane for samples with different wire bonding angles. The gold wire bonding process has important impact on angular uniformity of CCT in LED package. © 2011 Optical Society of America

Monolithically Integrated Metal/Semiconductor Tunnel Junction Nanowire Light-Emitting Diodes.

PubMed

Sadaf, S M; Ra, Y H; Szkopek, T; Mi, Z

2016-02-10

We have demonstrated for the first time an n(++)-GaN/Al/p(++)-GaN backward diode, wherein an epitaxial Al layer serves as the tunnel junction. The resulting p-contact free InGaN/GaN nanowire light-emitting diodes (LEDs) exhibited a low turn-on voltage (∼2.9 V), reduced resistance, and enhanced power, compared to nanowire LEDs without the use of Al tunnel junction or with the incorporation of an n(++)-GaN/p(++)-GaN tunnel junction. This unique Al tunnel junction overcomes some of the critical issues related to conventional GaN-based tunnel junction designs, including stress relaxation, wide depletion region, and light absorption, and holds tremendous promise for realizing low-resistivity, high-brightness III-nitride nanowire LEDs in the visible and deep ultraviolet spectral range. Moreover, the demonstration of monolithic integration of metal and semiconductor nanowire heterojunctions provides a seamless platform for realizing a broad range of multifunctional nanoscale electronic and photonic devices.

Aging characteristics of blue InGaN micro-light emitting diodes at an extremely high current density of 3.5 kA cm-2

NASA Astrophysics Data System (ADS)

Tian, Pengfei; Althumali, Ahmad; Gu, Erdan; Watson, Ian M.; Dawson, Martin D.; Liu, Ran

2016-04-01

The aging characteristics of blue InGaN micro-light emitting diodes (micro-LEDs) with different sizes have been studied at an extremely high current density 3.5 kA cm-2 for emerging micro-LED applications including visible light communication (VLC), micro-LED pumped organic lasers and optogenetics. The light output power of micro-LEDs first increases and then decreases due to the competition of Mg activation in p-GaN layer and defect generation in the active region. The smaller micro-LEDs show less light output power degradation compared with larger micro-LEDs, which is attributed to the lower junction temperature of smaller micro-LEDs. It is found that the high current density without additional junction temperature cannot induce significant micro-LED degradation at room temperature but the combination of the high current density and high junction temperature leads to strong degradation. Furthermore, the cluster LEDs, composed of a micro-LED array, have been developed with both high light output power and less light output degradation for micro-LED applications in solid state lighting and VLC.

Inactivation of Nonpathogenic Escherichia coli, Escherichia coli O157:H7, Salmonella enterica Typhimurium, and Listeria monocytogenes in Ice Using a UVC Light-Emitting Diode.

PubMed

Murashita, Suguru; Kawamura, Shuso; Koseki, Shigenobu

2017-07-01

Ice, widely used in the food industry, is a potential cause of food poisoning resulting from microbial contamination. Direct microbial inactivation of ice is necessary because microorganisms may have been present in the source water used to make it and/or may have been introduced due to poor hygiene during production or handling of the ice. Nonthermal and nondestructive microbial inactivation technologies are needed to control microorganisms in ice. We evaluated the applicability of a UVC light-emitting diode (UVC-LED) for microbial inactivation in ice. The effects of UV intensity and UV dose of the UVC-LED on Escherichia coli ATCC 25922 and a comparison of UVC-LED with a conventional UV lamp for effective bacterial inactivation in distilled water and ice cubes were investigated to evaluate the performance of the UVC-LED. Finally, we assessed the effects of the UVC-LED on pathogens such as E. coli O157:H7, Salmonella Typhimurium, and Listeria monocytogenes in ice cubes. The results indicated that UVC-LED effectiveness depended on the UV dose at all UV intensity conditions (0.084, 0.025, 0.013, 0.007, and 0.005 mW/cm 2 ) in ice and that UVC-LED could more efficiently inactivate E. coli ATCC 25922 in distilled water and ice than the UV lamp. At a UV dose of 2.64 mJ/cm 2 , E. coli in distilled water was decreased by 0.90 log CFU/mL (UV lamp) and by more than 7.0 log CFU/mL (UVC-LED). At 15.2 mJ/cm 2 , E. coli in ice was decreased by 3.18 log CFU/mL (UV lamp) and by 4.45 CFU/mL (UVC-LED). Furthermore, UVC-LED irradiation reduced the viable number of pathogens by 6 to 7 log cycles at 160 mJ/cm 2 , although the bactericidal effect was somewhat dependent on the type of bacteria. L. monocytogenes in ice was relatively more sensitive to UVC irradiation than were E. coli O157:H7 and Salmonella Typhimurium. These results demonstrate that UVC-LED irradiation could contribute to the safety of ice in the food industry.

Light-emitting diodes for analytical chemistry.

PubMed

Macka, Mirek; Piasecki, Tomasz; Dasgupta, Purnendu K

2014-01-01

Light-emitting diodes (LEDs) are playing increasingly important roles in analytical chemistry, from the final analysis stage to photoreactors for analyte conversion to actual fabrication of and incorporation in microdevices for analytical use. The extremely fast turn-on/off rates of LEDs have made possible simple approaches to fluorescence lifetime measurement. Although they are increasingly being used as detectors, their wavelength selectivity as detectors has rarely been exploited. From their first proposed use for absorbance measurement in 1970, LEDs have been used in analytical chemistry in too many ways to make a comprehensive review possible. Hence, we critically review here the more recent literature on their use in optical detection and measurement systems. Cloudy as our crystal ball may be, we express our views on the future applications of LEDs in analytical chemistry: The horizon will certainly become wider as LEDs in the deep UV with sufficient intensity become available.

Perspective: Toward efficient GaN-based red light emitting diodes using europium doping

NASA Astrophysics Data System (ADS)

Mitchell, Brandon; Dierolf, Volkmar; Gregorkiewicz, Tom; Fujiwara, Yasufumi

2018-04-01

While InGaN/GaN blue and green light-emitting diodes (LEDs) are commercially available, the search for an efficient red LED based on GaN is ongoing. The realization of this LED is crucial for the monolithic integration of the three primary colors and the development of nitride-based full-color high-resolution displays. In this perspective, we will address the challenges of attaining red luminescence from GaN under current injection and the methods that have been developed to circumvent them. While several approaches will be mentioned, a large emphasis will be placed on the recent developments of doping GaN with Eu3+ to achieve an efficient red GaN-based LED. Finally, we will provide an outlook to the future of this material as a candidate for small scale displays such as mobile device screens or micro-LED displays.

Stolephorus sp Behavior in Different LED (Light Emitting Diode) Color and Light Intensities

NASA Astrophysics Data System (ADS)

Fitri Aristi, D. P.; Ramadanita, I. A.; Hapsari, T. D.; Susanto, A.

2018-02-01

This research aims to observe anchovy (Stolephorus sp) behavior under different LED light intensities that affect eye physiology (cell cone structure). The materials used were Stolephorus sp taken from the waters off Jepara and 13 and 10 watt light emitting diode (LED). The research method was an experiment conducted from March through August 2015 in the waters off Jepara. Data analysis of visual histology and fish respond was carried out at the fishing gear material laboratory, anatomy and cultivate. Cone cell structure (mosaic cone) of Stolephorus sp forms a connected regular square pattern with every single cone surrounded by four double cones, which indicate that anchovies are sensitive to light. The 13 watt LED (628 lux) has faster response than the 10 watt LED (531 lux) as it has wider and higher emitting intensity, which also attracts fish to gather quicker.

Fabrication, characterization and applications of flexible vertical InGaN micro-light emitting diode arrays.

PubMed

Tian, Pengfei; McKendry, Jonathan J D; Gu, Erdan; Chen, Zhizhong; Sun, Yongjian; Zhang, Guoyi; Dawson, Martin D; Liu, Ran

2016-01-11

Flexible vertical InGaN micro-light emitting diode (micro-LED) arrays have been fabricated and characterized for potential applications in flexible micro-displays and visible light communication. The LED epitaxial layers were transferred from initial sapphire substrates to flexible AuSn substrates by metal bonding and laser lift off techniques. The current versus voltage characteristics of flexible micro-LEDs degraded after bending the devices, but the electroluminescence spectra show little shift even under a very small bending radius 3 mm. The high thermal conductivity of flexible metal substrates enables high thermal saturation current density and high light output power of the flexible micro-LEDs, benefiting the potential applications in flexible high-brightness micro-displays and high-speed visible light communication. We have achieved ~40 MHz modulation bandwidth and 120 Mbit/s data transmission speed for a typical flexible micro-LED.

Full down-conversion of amber-emitting phosphor-converted light-emitting diodes with powder phosphors and a long-wave pass filter.

PubMed

Oh, Jeong Rok; Cho, Sang-Hwan; Park, Hoo Keun; Oh, Ji Hye; Lee, Yong-Hee; Do, Young Rag

2010-05-24

This paper reports the possibility of a facile optical structure to realize a highly efficient monochromatic amber-emitting light-emitting diode (LED) using a powder-based phosphor-converted LED combined with a long-wave pass filter (LWPF). The capping of a blue-reflecting and amber-passing LWPF enhances both the amber emission from the silicate amber phosphor layer and the color purity due to the blocking and recycling of the pumping blue light from the InGaN LED. The enhancement of the luminous efficacy of the amber pc-LED with a LWPF (phosphor concentration 20 wt%, 39.4 lm/W) is 34% over that of an amber pc-LED without a LWPF (phosphor concentration 55 wt%, 29.4 lm/W) at 100 mA and a high color purity (>96%) with Commission International d'Eclairage (CIE) color coordinates of x=0.57 and y=0.42.

The High-efficiency LED Driver for Visible Light Communication Applications

PubMed Central

Gong, Cihun-Siyong Alex; Lee, Yu-Chen; Lai, Jyun-Liang; Yu, Chueh-Hao; Huang, Li Ren; Yang, Chia-Yen

2016-01-01

This paper presents a LED driver for VLC. The main purpose is to solve the low data rate problem used to be in switching type LED driver. The GaN power device is proposed to replace the traditional silicon power device of switching LED driver for the purpose of increasing switching frequency of converter, thereby increasing the bandwidth of data transmission. To achieve high efficiency, the diode-connected GaN power transistor is utilized to replace the traditional ultrafast recovery diode used to be in switching type LED driver. This work has been experimentally evaluated on 350-mA output current. The results demonstrate that it supports the data of PWM dimming level encoded in the PPM scheme for VLC application. The experimental results also show that system’s efficiency of 80.8% can be achieved at 1-Mb/s data rate. PMID:27498921

Skyglow changes over Tucson, Arizona, resulting from a municipal LED street lighting conversion

NASA Astrophysics Data System (ADS)

Barentine, John C.; Walker, Constance E.; Kocifaj, Miroslav; Kundracik, František; Juan, Amy; Kanemoto, John; Monrad, Christian K.

2018-06-01

The transition from earlier lighting technologies to white light-emitting diodes (LEDs) is a significant change in the use of artificial light at night. LEDs emit considerably more short-wavelength light into the environment than earlier technologies on a per-lumen basis. Radiative transfer models predict increased skyglow over cities transitioning to LED unless the total lumen output of new lighting systems is reduced. The City of Tucson, Arizona (U.S.), recently converted its municipal street lighting system from a mixture of fully shielded high- and low-pressure sodium (HPS/LPS) luminaires to fully shielded 3000 K white LED luminaires. The lighting design intended to minimize increases to skyglow in order to protect the sites of nearby astronomical observatories without compromising public safety. This involved the migration of over 445 million fully shielded HPS/LPS lumens to roughly 142 million fully shielded 3000 K white LED lumens and an expected concomitant reduction in the amount of visual skyglow over Tucson. SkyGlow Simulator models predict skyglow decreases on the order of 10-20% depending on whether fully shielded or partly shielded lights are in use. We tested this prediction using visual night sky brightness estimates and luminance-calibrated, panchromatic all-sky imagery at 15 locations in and near the city. Data were obtained in 2014, before the LED conversion began, and in mid-2017 after approximately 95% of ∼ 18,000 luminaires was converted. Skyglow differed marginally, and in all cases with valid data changed by < ± 20%. Over the same period, the city's upward-directed optical radiance detected from Earth orbit decreased by approximately 7%. While these results are not conclusive, they suggest that LED conversions paired with dimming can reduce skyglow over cities.

Polymer dispensing and embossing technology for the lens type LED packaging

NASA Astrophysics Data System (ADS)

Chien, Chien-Lin Chang; Huang, Yu-Che; Hu, Syue-Fong; Chang, Chung-Min; Yip, Ming-Chuen; Fang, Weileun

2013-06-01

This study presents a ring-type micro-structure design on the substrate and its corresponding micro fabrication processes for a lens-type light-emitting diode (LED) package. The dome-type or crater-type silicone lenses are achieved by a dispensing and embossing process rather than a molding process. Silicone with a high viscosity and thixotropy index is used as the encapsulant material. The ring-type micro structure is adopted to confine the dispensed silicone encapsulant so as to form the packaged lens. With the architecture and process described, this LED package technology herein has three merits: (1) the flexibility of lens-type LED package designs is enhanced; (2) a dome-type package design is used to enhance the intensity; (3) a crater-type package design is used to enhance the view angle. Measurement results show the ratio between the lens height and lens radius can vary from 0.4 to 1 by changing the volume of dispensed silicone. The view angles of dome-type and crater-type packages can reach 155° ± 5° and 175° ± 5°, respectively. As compared with the commercial plastic leaded chip carrier-type package, the luminous flux of a monochromatic blue light LED is improved by 15% by the dome-type package (improved by 7% by the crater-type package) and the luminous flux of a white light LED is improved by 25% by the dome-type package (improved by 13% by the crater-type package). The luminous flux of monochromatic blue light LED and white light LED are respectively improved by 8% and 12% by the dome-type package as compare with the crater-type package.

Red/near-infrared light-emitting diode therapy for traumatic brain injury

NASA Astrophysics Data System (ADS)

Naeser, Margaret A.; Martin, Paula I.; Ho, Michael D.; Krengel, Maxine H.; Bogdanova, Yelena; Knight, Jeffrey A.; Yee, Megan K.; Zafonte, Ross; Frazier, Judith; Hamblin, Michael R.; Koo, Bang-Bon

2015-05-01

This invited paper reviews our research with scalp application of red/near-infrared (NIR) light-emitting diodes (LED) to improve cognition in chronic, traumatic brain injury 1. Application of red/NIR light improves mitochondrial function (especially hypoxic/compromised cells) promoting increased ATP, important for cellular metabolism. Nitric oxide is released locally, increasing regional cerebral blood flow. Eleven chronic, mTBI participants with closed-head injury and cognitive dysfunction received 18 outpatient treatments (MWF, 6 Wks) starting at 10 Mo. to 8 Yr. post-mTBI (MVA, sports-related, IED blast injury). LED therapy is non-invasive, painless, non-thermal (FDA-cleared, non-significant risk device). Each LED cluster head (2.1" diameter, 500mW, 22.2mW/cm2) was applied 10 min (13J/cm2) to 11 scalp placements: midline, from front-to-back hairline; and bilaterally on dorsolateral prefrontal cortex, temporal, and parietal areas. Testing performed pre- and post-LED (+1 Wk, 1 and 2 Mo post- 18th treatment) showed significant linear trend for LED effect over time, on improved executive function and verbal memory. Fewer PTSD symptoms were reported. New studies at VA Boston include TBI patients treated with transcranial LED (26J/cm2); or treated with only intranasal red, 633nm and NIR, 810nm diodes placed into the nostrils (25 min, 6.5mW, 11.4J/cm2). Intranasal LEDs are hypothesized to deliver photons to hippocampus. Results are similar to Naeser et al. (2014). Actigraphy sleep data show increased sleep time (average, +1 Hr/night) post-18th transcranial or intranasal LED treatment. LED treatments may be self-administered at home (Naeser et al., 2011). A shamcontrolled study with Gulf War Illness Veterans is underway.

Improving spinach, radish, and lettuce growth under red light-emitting diodes (LEDs) with blue light supplementation

NASA Technical Reports Server (NTRS)

Yorio, N. C.; Goins, G. D.; Kagie, H. R.; Wheeler, R. M.; Sager, J. C.

2001-01-01

Radish (Raphanus sativus L. cv. Cherriette), lettuce (Lactuca sativa L. cv. Waldmann's Green), and spinach (Spinacea oleracea L. cv. Nordic IV) plants were grown under 660-nm red light-emitting diodes (LEDs) and were compared at equal photosynthetic photon flux (PPF) with either plants grown under cool-white fluorescent lamps (CWF) or red LEDs supplemented with 10% (30 micromoles m-2 s-1) blue light (400-500 nm) from blue fluorescent (BF) lamps. At 21 days after planting (DAP), leaf photosynthetic rates and stomatal conductance were greater for plants grown under CWF light than for those grown under red LEDs, with or without supplemental blue light. At harvest (21 DAP), total dry-weight accumulation was significantly lower for all species tested when grown under red LEDs alone than when grown under CWF light or red LEDs + 10% BF light. Moreover, total dry weight for radish and spinach was significantly lower under red LEDs + 10% BF than under CWF light, suggesting that addition of blue light to the red LEDs was still insufficient for achieving maximal growth for these crops.

Characterization of electrically-active defects in ultraviolet light-emitting diodes with laser-based failure analysis techniques

DOE Office of Scientific and Technical Information (OSTI.GOV)

Miller, Mary A.; Tangyunyong, Paiboon; Cole, Edward I.

2016-01-14

Laser-based failure analysis techniques demonstrate the ability to quickly and non-intrusively screen deep ultraviolet light-emitting diodes (LEDs) for electrically-active defects. In particular, two laser-based techniques, light-induced voltage alteration and thermally-induced voltage alteration, generate applied voltage maps (AVMs) that provide information on electrically-active defect behavior including turn-on bias, density, and spatial location. Here, multiple commercial LEDs were examined and found to have dark defect signals in the AVM indicating a site of reduced resistance or leakage through the diode. The existence of the dark defect signals in the AVM correlates strongly with an increased forward-bias leakage current. This increased leakage ismore » not present in devices without AVM signals. Transmission electron microscopy analysis of a dark defect signal site revealed a dislocation cluster through the pn junction. The cluster included an open core dislocation. Even though LEDs with few dark AVM defect signals did not correlate strongly with power loss, direct association between increased open core dislocation densities and reduced LED device performance has been presented elsewhere [M. W. Moseley et al., J. Appl. Phys. 117, 095301 (2015)].« less

Characterization of electrically-active defects in ultraviolet light-emitting diodes with laser-based failure analysis techniques

DOE PAGES

Miller, Mary A.; Tangyunyong, Paiboon; Edward I. Cole, Jr.

2016-01-12

In this study, laser-based failure analysis techniques demonstrate the ability to quickly and non-intrusively screen deep ultraviolet light-emitting diodes(LEDs) for electrically-active defects. In particular, two laser-based techniques, light-induced voltage alteration and thermally-induced voltage alteration, generate applied voltage maps (AVMs) that provide information on electrically-active defect behavior including turn-on bias, density, and spatial location. Here, multiple commercial LEDs were examined and found to have dark defect signals in the AVM indicating a site of reduced resistance or leakage through the diode. The existence of the dark defect signals in the AVM correlates strongly with an increased forward-bias leakage current. This increasedmore » leakage is not present in devices without AVM signals. Transmission electron microscopyanalysis of a dark defect signal site revealed a dislocation cluster through the pn junction. The cluster included an open core dislocation. Even though LEDs with few dark AVM defect signals did not correlate strongly with power loss, direct association between increased open core dislocation densities and reduced LED device performance has been presented elsewhere [M. W. Moseley et al., J. Appl. Phys. 117, 095301 (2015)].« less

In−Vitro and In−Vivo Noise Analysis for Optical Neural Recording

PubMed Central

Foust, Amanda J.; Schei, Jennifer L.; Rojas, Manuel J.; Rector, David M.

2008-01-01

Laser diodes (LD) are commonly used for optical neural recordings in chronically recorded animals and humans, primarily due to their brightness and small size. However, noise introduced by LDs may counteract the benefits of brightness when compared to low−noise light emitting diodes (LEDs). To understand noise sources in optical recordings, we systematically compared instrument and physiological noise profiles in two recording paradigms. A better understanding of noise sources will help improve optical recordings and make them more practical with fewer averages. We stimulated lobster nerves and rat cortex, then compared the root mean square (RMS) noise and signal−to−noise ratios (SNRs) of data obtained with LED, superluminescent diode (SLD) and LD illumination for different numbers of averages. The LED data exhibited significantly higher SNRs in fewer averages than LD data in all recordings. In the absence of tissue, LED noise increased linearly with intensity, while LD noise increased sharply in the transition to lasing and settled to noise levels significantly higher than the LED’s, suggesting that speckle noise contributed to the LD’s higher noise and lower SNRs. Our data recommend low coherence and portable light sources for in−vivo chronic neural recording applications. PMID:19021365

Enhanced light extraction efficiency of GaN-based light-emittng diodes by nitrogen implanted current blocking layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Yong Deok; Oh, Seung Kyu; Park, Min Joo

Highlights: • A nitrogen implanted current-blocking layer was successfully demonstrated. • Light-extraction efficiency and radiant intensity was increased by more than 20%. • Ion implantation was successfully implemented in GaN based light-emitting diodes. - Abstract: GaN-based light emitting diodes (LEDs) with a nitrogen implanted current-blocking layer (CBL) were successfully demonstrated for improving the light extraction efficiency (LEE) and radiant intensity. The LEE and radiant intensity of the LEDs with a shallow implanted CBL with nitrogen was greatly increased by more than 20% compared to that of a conventional LED without the CBL due to an increase in the effective currentmore » path, which reduces light absorption at the thick p-pad electrode. Meanwhile, deep implanted CBL with a nitrogen resulted in deterioration of the LEE and radiant intensity because of formation of crystal damage, followed by absorption of the light generated at the multi-quantum well(MQW). These results clearly suggest that ion implantation method, which is widely applied in the fabrication of Si based devices, can be successfully implemented in the fabrication of GaN based LEDs by optimization of implanted depth.« less

Comparative and quantitative analysis of white light-emitting diodes and other lamps used for home illumination

NASA Astrophysics Data System (ADS)

Rubinger, Rero Marques; da Silva, Edna Raimunda; Pinto, Daniel Zaroni; Rubinger, Carla Patrícia Lacerda; Oliveira, Adhimar Flávio; da Costa Bortoni, Edson

2015-01-01

We compared the photometric and radiometric quantities in the visible, ultraviolet, and infrared spectra of white light-emitting diodes (LEDs), incandescent light bulbs and a compact fluorescent lamp used for home illumination. The color-rendering index and efficiency-related quantities were also used as auxiliary tools in this comparison. LEDs have a better performance in all aspects except for the color-rendering index, which is better with an incandescent light bulb. Compact fluorescent lamps presented results that, to our knowledge, do not justify their substitution for the incandescent light bulb. The main contribution of this work is an approach based on fundamental quantities to evaluate LEDs and other light sources.

Reflectors with directional-mixed reflection properties for application in luminaries with high-power LED diodes

NASA Astrophysics Data System (ADS)

Zaremba, Krzysztof

2008-06-01

Application of directional-mixed reflectors results in a luminance decrease of the apparent image of light emitting diodes (LEDs), which is advantageous as far as glare reduction is concerned. On the other hand, reflectors have a negative impact on luminous intensity curves of the luminaries. This work analyzes an impact of surfaces with directional-mixed reflection properties in a mirror reflector designed for a luminary equipped with high-power LEDs. We present an algorithm used to determine the shape of the reflector of the surface with small scattering, where the axis twist angle for a parabolic reflector varies in a predefined range and follows a power function.

Low Level Light Therapy with Light-Emitting Diodes for the Aging Face.

PubMed

Calderhead, R Glen; Vasily, David B

2016-07-01

Low level light therapy (LLLT) with light-emitting diodes (LEDs) is emerging from the mists of black magic as a solid medico-scientific modality, with a substantial buildup of corroborative bodies of evidence for its efficacy and elucidation of the modes of action. Reports are appearing from many different specialties; however, of particular interest to plastic surgeons treating the aging face is the proven action of LED-LLLT on skin cells in both the epidermis and dermis and enhanced blood flow. Thus, LED-LLLT is a safe and effective stand-alone therapy for patients who are prepared to wait until the final effect is perceived. Copyright © 2016 Elsevier Inc. All rights reserved.

Light-emitting diodes based on colloidal silicon quantum dots

NASA Astrophysics Data System (ADS)

Zhao, Shuangyi; Liu, Xiangkai; Pi, Xiaodong; Yang, Deren

2018-06-01

Colloidal silicon quantum dots (Si QDs) hold great promise for the development of printed Si electronics. Given their novel electronic and optical properties, colloidal Si QDs have been intensively investigated for optoelectronic applications. Among all kinds of optoelectronic devices based on colloidal Si QDs, QD light-emitting diodes (LEDs) play an important role. It is encouraging that the performance of LEDs based on colloidal Si QDs has been significantly increasing in the past decade. In this review, we discuss the effects of the QD size, QD surface and device structure on the performance of colloidal Si-QD LEDs. The outlook on the further optimization of the device performance is presented at the end.

Blue light emission from the heterostructured ZnO/InGaN/GaN

PubMed Central

2013-01-01

ZnO/InGaN/GaN heterostructured light-emitting diodes (LEDs) were fabricated by molecular beam epitaxy and atomic layer deposition. InGaN films consisted of an Mg-doped InGaN layer, an undoped InGaN layer, and a Si-doped InGaN layer. Current-voltage characteristic of the heterojunction indicated a diode-like rectification behavior. The electroluminescence spectra under forward biases presented a blue emission accompanied by a broad peak centered at 600 nm. With appropriate emission intensity ratio, the heterostructured LEDs had potential application in white LEDs. Moreover, a UV emission and an emission peak centered at 560 nm were observed under reverse bias. PMID:23433236

Electroluminescence of ordered ZnO nanorod array/p-GaN light-emitting diodes with graphene current spreading layer

PubMed Central

2014-01-01

Ordered ZnO nanorod array/p-GaN heterojunction light-emitting diodes (LEDs) have been fabricated by introducing graphene as the current spreading layer, which exhibit improved electroluminescence performance by comparison to the LED using a conventional structure (indium-tin-oxide as the current spreading layer). In addition, by adjusting the diameter of ZnO nanorod array in use, the light emission of the ZnO nanorod array/p-GaN heterojunction LEDs was enhanced further. This work has great potential applications in solid-state lighting, high performance optoelectronic devices, and so on. PACS 78.60.Fi; 85.60.Jb; 78.67.Lt; 81.10.Dn PMID:25489284

Electroluminescence of ordered ZnO nanorod array/p-GaN light-emitting diodes with graphene current spreading layer.

PubMed

Dong, Jing-Jing; Hao, Hui-Ying; Xing, Jie; Fan, Zhen-Jun; Zhang, Zi-Li

2014-01-01

Ordered ZnO nanorod array/p-GaN heterojunction light-emitting diodes (LEDs) have been fabricated by introducing graphene as the current spreading layer, which exhibit improved electroluminescence performance by comparison to the LED using a conventional structure (indium-tin-oxide as the current spreading layer). In addition, by adjusting the diameter of ZnO nanorod array in use, the light emission of the ZnO nanorod array/p-GaN heterojunction LEDs was enhanced further. This work has great potential applications in solid-state lighting, high performance optoelectronic devices, and so on. 78.60.Fi; 85.60.Jb; 78.67.Lt; 81.10.Dn.

A lamp light-emitting diode-induced fluorescence detector for capillary electrophoresis.

PubMed

Xu, Jing; Xiong, Yan; Chen, Shiheng; Guan, Yafeng

2008-07-15

A light-emitting diode-induced fluorescence detector (LED-FD) for capillary electrophoresis was constructed and evaluated. A lamp LED with an enhanced emission spectrum and a band pass filter was used as the excitation light source. Refractive index matching fluid (RIMF) was used in the detection cell to reduce scattering light and the noise level. The limit of detection (LOD) for fluorescein was 1.5 nM (SNR=3). The system exhibited linear responses in the range of 1 x 10(-8) to 5 x 10(-6)M (R=0.999). Application of the lamp LED-FD for the analysis of FITC-labeled ephedra herb extract by capillary electrophoresis was demonstrated.

Microsensor research

NASA Astrophysics Data System (ADS)

Hughes, R. C.; Drebing, C. G.

1990-04-01

The technology that led to very large scale integrated circuits on silicon chips also provides a basis for new microsensors that are small, inexpensive, low power, rugged, and reliable. Two examples of microsensors Sandia is developing that take advantage of this technology are the microelectronic chemical sensor array and the radiation sensing field effect transistor (RADFET). Increasingly, the technology of chemical sensing needs new microsensor concepts. Applications in this area include environmental monitoring, criminal investigations, and state-of-health monitoring, both for equipment and living things. Chemical microsensors can satisfy sensing needs in the industrial, consumer, aerospace, and defense sectors. The microelectronic chemical-sensor array may address some of these applications. We have fabricated six separate chemical gas sensing areas on the microelectronic chemical sensor array. By using different catalytic metals on the gate areas of the diodes, we can selectively sense several gases.

Prognostics-based qualification of high-power white LEDs using Lévy process approach

NASA Astrophysics Data System (ADS)

Yung, Kam-Chuen; Sun, Bo; Jiang, Xiaopeng

2017-01-01

Due to their versatility in a variety of applications and the growing market demand, high-power white light-emitting diodes (LEDs) have attracted considerable attention. Reliability qualification testing is an essential part of the product development process to ensure the reliability of a new LED product before its release. However, the widely used IES-TM-21 method does not provide comprehensive reliability information. For more accurate and effective qualification, this paper presents a novel method based on prognostics techniques. Prognostics is an engineering technology predicting the future reliability or determining the remaining useful lifetime (RUL) of a product by assessing the extent of deviation or degradation from its expected normal operating conditions. A Lévy subordinator of a mixed Gamma and compound Poisson process is used to describe the actual degradation process of LEDs characterized by random sporadic small jumps of degradation degree, and the reliability function is derived for qualification with different distribution forms of jump sizes. The IES LM-80 test results reported by different LED vendors are used to develop and validate the qualification methodology. This study will be helpful for LED manufacturers to reduce the total test time and cost required to qualify the reliability of an LED product.

AlGaInN laser diode technology for systems applications

NASA Astrophysics Data System (ADS)

Najda, S. P.; Perlin, P.; Suski, T.; Marona, L.; Bockowski, M.; Leszczyński, M.; Wisniewski, P.; Czernecki, R.; Kucharski, R.; Targowski, G.; Watson, S.; Kelly, A. E.

2016-02-01

Gallium Nitride (GaN) laser diodes fabricated from the AlGaInN material system is an emerging technology that allows laser diodes to be fabricated over a very wide wavelength range from u.v. to the visible, and is a key enabler for the development of new system applications such as (underwater and terrestrial) telecommunications, quantum technologies, display sources and medical instrumentation.

Efficient carrier relaxation and fast carrier recombination of N-polar InGaN/GaN light emitting diodes

NASA Astrophysics Data System (ADS)

Feng, Shih-Wei; Liao, Po-Hsun; Leung, Benjamin; Han, Jung; Yang, Fann-Wei; Wang, Hsiang-Chen

2015-07-01

Based on quantum efficiency and time-resolved electroluminescence measurements, the effects of carrier localization and quantum-confined Stark effect (QCSE) on carrier transport and recombination dynamics of Ga- and N-polar InGaN/GaN light-emitting diodes (LEDs) are reported. The N-polar LED exhibits shorter ns-scale response, rising, delay, and recombination times than the Ga-polar one does. Stronger carrier localization and the combined effects of suppressed QCSE and electric field and lower potential barrier acting upon the forward bias in an N-polar LED provide the advantages of more efficient carrier relaxation and faster carrier recombination. By optimizing growth conditions to enhance the radiative recombination, the advantages of more efficient carrier relaxation and faster carrier recombination in a competitive performance N-polar LED can be realized for applications of high-speed flash LEDs. The research results provide important information for carrier transport and recombination dynamics of an N-polar InGaN/GaN LED.

Efficient carrier relaxation and fast carrier recombination of N-polar InGaN/GaN light emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Feng, Shih-Wei, E-mail: swfeng@nuk.edu.tw; Liao, Po-Hsun; Leung, Benjamin

2015-07-28

Based on quantum efficiency and time-resolved electroluminescence measurements, the effects of carrier localization and quantum-confined Stark effect (QCSE) on carrier transport and recombination dynamics of Ga- and N-polar InGaN/GaN light-emitting diodes (LEDs) are reported. The N-polar LED exhibits shorter ns-scale response, rising, delay, and recombination times than the Ga-polar one does. Stronger carrier localization and the combined effects of suppressed QCSE and electric field and lower potential barrier acting upon the forward bias in an N-polar LED provide the advantages of more efficient carrier relaxation and faster carrier recombination. By optimizing growth conditions to enhance the radiative recombination, the advantagesmore » of more efficient carrier relaxation and faster carrier recombination in a competitive performance N-polar LED can be realized for applications of high-speed flash LEDs. The research results provide important information for carrier transport and recombination dynamics of an N-polar InGaN/GaN LED.« less

Solid State pH Sensor Based on Light Emitting Diodes (LED) As Detector Platform

PubMed Central

Lau, King Tong; Shepherd, R.; Diamond, Danny; Diamond, Dermot

2006-01-01

A low-power, high sensitivity, very low-cost light emitting diode (LED)-based device developed for low-cost sensor networks was modified with bromocresol green membrane to work as a solid-state pH sensor. In this approach, a reverse-biased LED functioning as a photodiode is coupled with a second LED configured in conventional emission mode. A simple timer circuit measures how long (in microsecond) it takes for the photocurrent generated on the detector LED to discharge its capacitance from logic 1 (+5 V) to logic 0 (+1.7 V). The entire instrument provides an inherently digital output of light intensity measurements for a few cents. A light dependent resistor (LDR) modified with similar sensor membrane was also used as a comparison method. Both the LED sensor and the LDR sensor responded to various pH buffer solutions in a similar way to obtain sigmoidal curves expected of the dye. The pKa value obtained for the sensors was found to agree with the literature value.

Effects of Light-Emitting Diode Irradiation on Growth Characteristics and Regulation of Porphyrin Biosynthesis in Rice Seedlings.

PubMed

Tran, Lien Hong; Jung, Sunyo

2017-03-16

We examined the effects of light quality on growth characteristics and porphyrin biosynthesis of rice seedlings grown under different wavelengths from light emitting diodes (LEDs). After 10 days of exposure to various wavelengths of LEDs, leaf area and shoot biomass were greater in seedlings grown under white and blue LEDs than those of green and red LEDs. Both green and red LED treatments drastically decreased levels of protoporphyrin IX (Proto IX) and Mg-porphyrins compared to those of white LED, while levels of Mg-Proto IX monomethyl ester and protochlorophyllide under blue LED were decreased by 21% and 49%, respectively. Transcript levels of PPO1 were greatly upregulated in seedlings grown under red LED compared to white LED, whereas transcript levels of HO2 and CHLD were upregulated under blue LED. Overall, most porphyrin biosynthetic genes in the Fe-porphyrin branch remained almost constant or upregulated, while most genes in the Mg-porphyrin branch were downregulated. Expression levels of nuclear-encoded photosynthetic genes Lhcb and RbcS noticeably decreased after exposure to blue and red LEDs, compared to white LED. Our study suggests that specific wavelengths of LED greatly influence characteristics of growth in plants partly through altering the metabolic regulation of the porphyrin biosynthetic pathway, and possibly contribute to affect retrograde signaling.

Influence of photo-generated carriers on current spreading in double diode structures for electroluminescent cooling

NASA Astrophysics Data System (ADS)

Radevici, Ivan; Tiira, Jonna; Sadi, Toufik; Oksanen, Jani

2018-05-01

Current crowding close to electrical contacts is a common challenge in all optoelectronic devices containing thin current spreading layers (CSLs). We analyze the effects of current spreading on the operation of the so-called double diode structure (DDS), consisting of a light emitting diode (LED) and a photodiode (PD) fabricated within the same epitaxial growth process, and providing an attractive platform for studying electroluminescent (EL) cooling under high bias conditions. We show that current spreading in the common n-type layer between the LED and the PD can be dramatically improved by the strong optical coupling between the diodes, as the coupling enables a photo-generated current through the PD. This reduces the current in the DDS CSL and enables the study of EL cooling using structures that are not limited by the conventional light extraction challenges encountered in normal LEDs. The current spreading in the structures is studied using optical imaging techniques, electrical measurements, simulations, as well as simple equivalent circuit models developed for this purpose. The improved current spreading leads further to a mutual dependence with the coupling efficiency, which is expected to facilitate the process of optimizing the DDS. We also report a new improved value of 63% for the DDS coupling quantum efficiency.

Engineering future light emitting diodes and photovoltaics with inexpensive materials: Integrating ZnO and Si into GaN-based devices

NASA Astrophysics Data System (ADS)

Bayram, C.; Shiu, K. T.; Zhu, Y.; Cheng, C. W.; Sadana, D. K.; Teherani, F. H.; Rogers, D. J.; Sandana, V. E.; Bove, P.; Zhang, Y.; Gautier, S.; Cho, C.-Y.; Cicek, E.; Vashaei, Z.; McClintock, R.; Razeghi, M.

2013-03-01

Indium Gallium Nitride (InGaN) based PV have the best fit to the solar spectrum of any alloy system and emerging LED lighting based on InGaN technology and has the potential to reduce energy consumption by nearly one half while enabling significant carbon emission reduction. However, getting the maximum benefit from GaN diode -based PV and LEDs will require wide-scale adoption. A key bottleneck for this is the device cost, which is currently dominated by the substrate (i.e. sapphire) and the epitaxy (i.e. GaN). This work investigates two schemes for reducing such costs. First, we investigated the integration of Zinc Oxide (ZnO) in InGaN-based diodes. (Successful growth of GaN on ZnO template layers (on sapphire) was illustrated. These templates can then be used as sacrificial release layers for chemical lift-off. Such an approach provides an alternative to laser lift-off for the transfer of GaN to substrates with a superior cost-performance profile, plus an added advantage of reclaiming the expensive single-crystal sapphire. It was also illustrated that substitution of low temperature n-type ZnO for n-GaN layers can combat indium leakage from InGaN quantum well active layers in inverted p-n junction structures. The ZnO overlayers can also double as transparent contacts with a nanostructured surface which enhances light in/out coupling. Thus ZnO was confirmed to be an effective GaN substitute which offers added flexibility in device design and can be used in order to simultaneously reduce the epitaxial cost and boost the device performance. Second, we investigated the use of GaN templates on patterned Silicon (100) substrates for reduced substrate cost LED applications. Controlled local metal organic chemical vapor deposition epitaxy of cubic phase GaN with on-axis Si(100) substrates was illustrated. Scanning electron microscopy and transmission electron microscopy techniques were used to investigate uniformity and examine the defect structure in the GaN. Our results suggest that groove structures are very promising for controlled local epitaxy of cubic phase GaN. Overall, it is concluded that there are significant opportunities for cost reduction in novel hybrid diodes based on ZnO-InGaN-Si hybridization.

LED-based high-speed visible light communications

NASA Astrophysics Data System (ADS)

Chi, Nan; Shi, Meng; Zhao, Yiheng; Wang, Fumin; Shi, Jianyang; Zhou, Yingjun; Lu, Xingyu; Qiao, Liang

2018-01-01

We are seeing a growing use of light emitting diodes (LEDs) in a range of applications including lighting, TV and backlight board screen, display etc. In comparison with the traditional incandescent and fluorescent light bulbs, LEDs offer long life-space, much higher energy efficiency, high performance cost ratio and above all very fast switching capability. LED based Visible Light Communications (VLC) is an emerging field of optical communications that focuses on the part of the electromagnetic spectrum that humans can see. Depending on the transmission distance, we can divide the whole optical network into two categories, long haul and short haul. Visible light communication can be a promising candidate for short haul applications. In this paper, we outline the configuration of VLC, its unique benefits, and describe the state of the art research contributions consisting of advanced modulation formats including adaptive bit loading OFDM, carrierless amplitude and phase (CAP), pulse amplitude modulation (PAM) and single carrier Nyquist, linear equalization and nonlinear distortion mitigation based on machine learning, quasi-balanced coding and phase-shifted Manchester coding. These enabling technologies can support VLC up to 10Gb/s class free space transmission.

Deep ultraviolet light-emitting and laser diodes

NASA Astrophysics Data System (ADS)

Khan, Asif; Asif, Fatima; Muhtadi, Sakib

2016-02-01

Nearly all the air-water purification/polymer curing systems and bio-medical instruments require 250-300 nm wavelength ultraviolet light for which mercury lamps are primarily used. As a potential replacement for these hazardous mercury lamps, several global research teams are developing AlGaN based Deep Ultraviolet (DUV) light emitting diodes (LEDs) and DUV LED Lamps and Laser Diodes over Sapphire and AlN substrates. In this paper, we review the current research focus and the latest device results. In addition to the current results we also discuss a new quasipseudomorphic device design approach. This approach which is much easier to integrate in a commercial production setting was successfully used to demonstrate UVC devices on Sapphire substrates with performance levels equal to or better than the conventional relaxed device designs.

Formation of 2D bright spatial solitons in lithium niobate with photovoltaic response and incoherent background

NASA Astrophysics Data System (ADS)

Pustozerov, A.; Shandarov, V.

2017-12-01

The influence of incoherent background illumination produced by light-emitting diodes (LED's) of different average wavelengths and laser diode emitting in blue region of visible on diffraction characteristics of narrow coherent light beams of He-Ne laser due to refractive index changes of Fe-doped lithium niobate sample are studied. It has been experimentally demonstrated that nonlinear diffraction of red beams with wavelength 633 nm and diameters on full width of half maximum (FWHM) near to 15 μm may be totally compensated using background light with average wavelengths 450 - 465 nm. To provide the necessary intensity of incoherent background, the combinations of spherical and cylindrical concave lenses with blue LED and laser diode module without focusing its beam have been used.

Evaluation of light-emitting diodes for signage applications

NASA Astrophysics Data System (ADS)

Freyssinier, Jean Paul; Zhou, Yutao; Ramamurthy, Vasudha; Bierman, Andrew; Bullough, John D.; Narendran, Nadarajah

2004-01-01

This paper outlines two parts of a study designed to evaluate the use of light-emitting diodes (LEDs) in channel-letter signs. The first part of the study evaluated the system performance of red LED signs and white LED signs against reference neon and cold-cathode signs. The results show a large difference between the actual performance and potential savings from red and white LEDs. Depending on the configuration, a red LED sign could use 20% to 60% less power than a neon sign at the same light output. The light output of the brightest white LED sign tested was 15% lower than the cold-cathode reference, but its power was 53% higher. It appears from this study that the most efficient white LED system is still 40% less efficient than the cold-cathode system tested. One area that offers a great potential for further energy savings is the acrylic diffuser of the signs. The acrylic diffusers measured absorb between 60% and 66% of the light output produced by the sign. Qualitative factors are also known to play an important role in signage systems. One of the largest issues with any new lighting technology is its acceptance by the end user. Consistency of light output and color among LEDs, even from the same manufacturing batch, and over time, are two of the major issues that also could affect the advantages of LEDs for signage applications. To evaluate different signage products and to identify the suitability of LEDs for this application, it is important to establish a criterion for brightness uniformity. Building upon this information, the second part of the study used human factors evaluations to determine a brightness-uniformity criterion for channel-letter signs. The results show that the contrast modulation between bright and dark areas within a sign seems to elicit the strongest effect on how people perceive uniformity. A strong monotonic relationship between modulation and acceptability was found in this evaluation. The effect of contrast seems to be stronger than that of spatial frequency or background luminance, particularly for contrast modulation values of less than 0.20 or greater than 0.60. A sign with luminance variations of less than 20% would be accepted by at least 80% of the population in any given context.

White thin-film flip-chip LEDs with uniform color temperature using laser lift-off and conformal phosphor coating technologies.

PubMed

Lin, Huan-Ting; Tien, Ching-Ho; Hsu, Chen-Peng; Horng, Ray-Hua

2014-12-29

We fabricated a phosphor-conversion white light emitting diode (PC-WLED) using a thin-film flip-chip GaN LED with a roughened u-GaN surface (TFFC-SR-LED) that emits blue light at 450 nm wavelength with a conformal phosphor coating that converts the blue light into yellow light. It was found that the TFFC-SR-LED with the thin-film substrate removal process and surface roughening exhibits a power enhancement of 16.1% when compared with the TFFC-LED without a sapphire substrate. When a TFFC-SR-LED with phosphors on a Cu-metal packaging-base (TFFC-SR-Cu-WLED) was operated at a forward-bias current of 350 mA, luminous flux and luminous efficacy were increased by 17.8 and 11.9%, compared to a TFFC-SR-LED on a Cup-shaped packaging-base (TFFC-SR-Cup-WLED). The angular correlated color temperature (CCT) deviation of a TFFC-SR-Cu-WLED reaches 77 K in the range of -70° to + 70° when the average CCT of white LEDs is around 4300 K. Consequently, the TFFC-SR-LED in a conformal coating phosphor structure on a Cu packaging-base could not only increase the luminous flux output, but also improve the angular-dependent CCT uniformity, thereby reducing the yellow ring effect.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Davis, Lynn; Arquit Niederberger, Anne

Abstract— Lighting systems have the ability to transform the economic and educational infrastructure of disadvantaged communities, and eradicating “light poverty” has become one of the primary goals of the International Year of Light 2015. Solid-state lighting (SSL) technology, based on light-emitting diode (LED) light sources, has emerged as the next generation of lighting technology, with a current global market penetration of roughly 5%. This paper will report on recent research on understanding SSL lighting system reliability (failure modes, environmental stressors, electrical power quality); discuss the implications of SSL technology reliability for providing lighting services; and suggest practical approaches to ensuremore » SSL reliability to benefit humanity. Among the key findings from this work is that LED sources can be extremely reliable, withstanding a broad range of environmental stresses without failure. Nonetheless, SSL lighting systems can have a negative impact on electrical power reliability, as well as on the affordability of lighting services, without attention to the quality of the accompanying power infrastructure. It is therefore critical to ensure that the performance of the power supply electronics used in lighting systems is matched to the quality of the power source, when evaluating energy efficient lighting choices.« less

Zinc oxide nanorod based photonic devices: recent progress in growth, light emitting diodes and lasers.

PubMed

Willander, M; Nur, O; Zhao, Q X; Yang, L L; Lorenz, M; Cao, B Q; Zúñiga Pérez, J; Czekalla, C; Zimmermann, G; Grundmann, M; Bakin, A; Behrends, A; Al-Suleiman, M; El-Shaer, A; Che Mofor, A; Postels, B; Waag, A; Boukos, N; Travlos, A; Kwack, H S; Guinard, J; Le Si Dang, D

2009-08-19

Zinc oxide (ZnO), with its excellent luminescent properties and the ease of growth of its nanostructures, holds promise for the development of photonic devices. The recent advances in growth of ZnO nanorods are discussed. Results from both low temperature and high temperature growth approaches are presented. The techniques which are presented include metal-organic chemical vapour deposition (MOCVD), vapour phase epitaxy (VPE), pulse laser deposition (PLD), vapour-liquid-solid (VLS), aqueous chemical growth (ACG) and finally the electrodeposition technique as an example of a selective growth approach. Results from structural as well as optical properties of a variety of ZnO nanorods are shown and analysed using different techniques, including high resolution transmission electron microscopy (HR-TEM), scanning electron microscopy (SEM), photoluminescence (PL) and cathodoluminescence (CL), for both room temperature and for low temperature performance. These results indicate that the grown ZnO nanorods possess reproducible and interesting optical properties. Results on obtaining p-type doping in ZnO micro- and nanorods are also demonstrated using PLD. Three independent indications were found for p-type conducting, phosphorus-doped ZnO nanorods: first, acceptor-related CL peaks, second, opposite transfer characteristics of back-gate field effect transistors using undoped and phosphorus doped wire channels, and finally, rectifying I-V characteristics of ZnO:P nanowire/ZnO:Ga p-n junctions. Then light emitting diodes (LEDs) based on n-ZnO nanorods combined with different technologies (hybrid technologies) are suggested and the recent electrical, as well as electro-optical, characteristics of these LEDs are shown and discussed. The hybrid LEDs reviewed and discussed here are mainly presented for two groups: those based on n-ZnO nanorods and p-type crystalline substrates, and those based on n-ZnO nanorods and p-type amorphous substrates. Promising electroluminescence characteristics aimed at the development of white LEDs are demonstrated. Although some of the presented LEDs show visible emission for applied biases in excess of 10 V, optimized structures are expected to provide the same emission at much lower voltage. Finally, lasing from ZnO nanorods is briefly reviewed. An example of a recent whispering gallery mode (WGM) lasing from ZnO is demonstrated as a way to enhance the stimulated emission from small size structures.

Optical sectioning microscopes with no moving parts using a micro-stripe array light emitting diode.

PubMed

Poher, V; Zhang, H X; Kennedy, G T; Griffin, C; Oddos, S; Gu, E; Elson, D S; Girkin, M; French, P M W; Dawson, M D; Neil, M A

2007-09-03

We describe an optical sectioning microscopy system with no moving parts based on a micro-structured stripe-array light emitting diode (LED). By projecting arbitrary line or grid patterns onto the object, we are able to implement a variety of optical sectioning microscopy techniques such as grid-projection structured illumination and line scanning confocal microscopy, switching from one imaging technique to another without modifying the microscope setup. The micro-structured LED and driver are detailed and depth discrimination capabilities are measured and calculated.

Quantification of lycopene in the processed tomato-based products by means of the light-emitting diode (LED) and compact photoacoustic (PA) detector

NASA Astrophysics Data System (ADS)

Bicanic, D.; Skenderović, H.; Marković, K.; Dóka, O.; Pichler, L.; Pichler, G.; Luterotti, S.

2010-03-01

The combined use of a high power light emitting diode (LED) and the compact photoacoustic (PA) detector offers the possibility for a rapid (no extraction needed), accurate (precision 1.5%) and inexpensive quantification of lycopene in different products derived from the thermally processed tomatoes. The concentration of lycopene in selected products ranges from a few mg to several tens mg per 100 g fresh weight. The HPLC was used as the well established reference method.

Processes for design, construction and utilisation of arrays of light-emitting diodes and light-emitting diode-coupled optical fibres for multi-site brain light delivery

PubMed Central

Bernstein, Jacob G.; Allen, Brian D.; Guerra, Alexander A.; Boyden, Edward S.

2016-01-01

Optogenetics enables light to be used to control the activity of genetically targeted cells in the living brain. Optical fibers can be used to deliver light to deep targets, and LEDs can be spatially arranged to enable patterned light delivery. In combination, arrays of LED-coupled optical fibers can enable patterned light delivery to deep targets in the brain. Here we describe the process flow for making LED arrays and LED-coupled optical fiber arrays, explaining key optical, electrical, thermal, and mechanical design principles to enable the manufacturing, assembly, and testing of such multi-site targetable optical devices. We also explore accessory strategies such as surgical automation approaches as well as innovations to enable low-noise concurrent electrophysiology. PMID:26798482

Size-controllable nanopyramids photonic crystal selectively grown on p-GaN for enhanced light-extraction of light-emitting diodes.

PubMed

Du, Chengxiao; Wei, Tongbo; Zheng, Haiyang; Wang, Liancheng; Geng, Chong; Yan, Qingfeng; Wang, Junxi; Li, Jinmin

2013-10-21

Size-controllable p-GaN hexagonal nanopyramids (HnPs)-photonic crystal (PhC) structures were selectively grown on flat p-GaN layer for the elimination of total internal reflection of light-emitting diodes (LEDs). The LEDs with HnPs-PhC of 46.3% bottom fill factor (PhC lattice constant is 730 nm) showed an improved light output power by 99.9% at forward current of 350 mA compared to the reference LEDs with flat p-GaN layer. We confirmed the effect of HnPs-PhC with different bottom fill factors and the effect of nanopyramid-shaped and nanocolumn-shaped PhC on the light-extraction of LEDs was also investigated by using three-dimensional finite-difference time-domain simulations.

Optimized optical wireless channel for indoor and intra-vehicle communications: power distribution and SNR analysis

NASA Astrophysics Data System (ADS)

Shaaban, Rana; Faruque, Saleh

2018-01-01

Light emitting diodes - LEDs are modernizing the indoor illumination and replacing current incandescent and fluorescent lamps rapidly. LEDs have multiple advantages such as extremely high energy efficient, longer lifespan, and lower heat generation. Due to the ability to switch to different light intensity at a very fast rate, LED has given rise to a unique communication technology (visible light communication - VLC) used for high speed data transmission. By studying various kinds of commonly used VLC channel analysis: diffuse and line of sight channels, we presented a simply improved indoor and intra-vehicle visible light communication transmission model. Employing optical wireless communications within the vehicle, not only enhance user mobility, but also alleviate radio frequency interference, and increase efficiency by lowering the complexity of copper cabling. Moreover, a solution to eliminate ambient noise caused by environmental conditions is examined by using optical differential receiver. The simulation results show the improved received power distribution and signal to noise ratio - SNR.

RGB digital lensless holographic microscopy

NASA Astrophysics Data System (ADS)

Garcia-Sucerquia, Jorge

2013-11-01

The recent introduction of color digital lensless holographic microscopy (CDLHM) has shown the possibility of imaging microscopic specimens at full color without the need of lenses. Owing to the simplicity, robustness, and compactness of the digital lensless holographic microscopes (DLHM), they have been presented as the ideal candidates to being developed into portable holographic microscopes. However, in the case of CDLHM the utilization of three independent lasers hinders the portability option for this microscope. In this contribution an alternative to reduce the complexity of CDLHM aimed to recover the portability of this microscopy technology is presented. A super-bright white-light light-emitting diode (LED) is spectrally and spatially filtered to produce the needed illumination by CDLHM to work. CDLHM with LED illumination is used to image at full color a section of the head of a drosophila melanogaster fly (fruit fly). The LED-CDLHM method shows the capability of imaging objects of 2μm size in comparison with the micrometer resolution reported for LASER-CDLHM.

Enhanced Automated Guidance System for Horizontal Auger Boring Based on Image Processing

PubMed Central

Wu, Lingling; Wen, Guojun; Wang, Yudan; Huang, Lei; Zhou, Jiang

2018-01-01

Horizontal auger boring (HAB) is a widely used trenchless technology for the high-accuracy installation of gravity or pressure pipelines on line and grade. Differing from other pipeline installations, HAB requires a more precise and automated guidance system for use in a practical project. This paper proposes an economic and enhanced automated optical guidance system, based on optimization research of light-emitting diode (LED) light target and five automated image processing bore-path deviation algorithms. An LED target was optimized for many qualities, including light color, filter plate color, luminous intensity, and LED layout. The image preprocessing algorithm, feature extraction algorithm, angle measurement algorithm, deflection detection algorithm, and auto-focus algorithm, compiled in MATLAB, are used to automate image processing for deflection computing and judging. After multiple indoor experiments, this guidance system is applied in a project of hot water pipeline installation, with accuracy controlled within 2 mm in 48-m distance, providing accurate line and grade controls and verifying the feasibility and reliability of the guidance system. PMID:29462855

A spectrally tunable all-graphene-based flexible field-effect light-emitting device

PubMed Central

Wang, Xiaomu; Tian, He; Mohammad, Mohammad Ali; Li, Cheng; Wu, Can; Yang, Yi; Ren, Tian-Ling

2015-01-01

The continuous tuning of the emission spectrum of a single light-emitting diode (LED) by an external electrical bias is of great technological significance as a crucial property in high-quality displays, yet this capability has not been demonstrated in existing LEDs. Graphene, a tunable optical platform, is a promising medium to achieve this goal. Here we demonstrate a bright spectrally tunable electroluminescence from blue (∼450 nm) to red (∼750 nm) at the graphene oxide/reduced-graphene oxide interface. We explain the electroluminescence results from the recombination of Poole–Frenkel emission ionized electrons at the localized energy levels arising from semi-reduced graphene oxide, and holes from the top of the π band. Tuning of the emission wavelength is achieved by gate modulation of the participating localized energy levels. Our demonstration of current-driven tunable LEDs not only represents a method for emission wavelength tuning but also may find applications in high-quality displays. PMID:26178323

On the chemical homogeneity of In xGa 1–xN alloys – Electron microscopy at the edge of technical limits

DOE PAGES

Specht, Petra; Kisielowski, Christian

2016-08-30

Ternary In xGa 1–xN alloys became technologically attractive when p-doping was achieved to produce blue and green light emitting diodes (LED)s. Starting in the mid 1990th, investigations of their chemical homogeneity were driven by the need to understand carrier recombination mechanisms in optical device structures to optimize their performance. Transmission electron microscopy (TEM) is the technique of choice to complement optical data evaluations, which suggests the coexistence of local carrier recombination mechanisms based on piezoelectric field effects and on indium clustering in the quantum wells of LEDs. We summarize the historic context of homogeneity investigations using electron microscopy techniques thatmore » can principally resolve the question of indium segregation and clustering in In xGa 1–xN alloys if optimal sample preparation and electron dose-controlled imaging techniques are employed together with advanced data evaluation.« less

Enhanced Automated Guidance System for Horizontal Auger Boring Based on Image Processing.

PubMed

Wu, Lingling; Wen, Guojun; Wang, Yudan; Huang, Lei; Zhou, Jiang

2018-02-15

Horizontal auger boring (HAB) is a widely used trenchless technology for the high-accuracy installation of gravity or pressure pipelines on line and grade. Differing from other pipeline installations, HAB requires a more precise and automated guidance system for use in a practical project. This paper proposes an economic and enhanced automated optical guidance system, based on optimization research of light-emitting diode (LED) light target and five automated image processing bore-path deviation algorithms. An LED light target was optimized for many qualities, including light color, filter plate color, luminous intensity, and LED layout. The image preprocessing algorithm, direction location algorithm, angle measurement algorithm, deflection detection algorithm, and auto-focus algorithm, compiled in MATLAB, are used to automate image processing for deflection computing and judging. After multiple indoor experiments, this guidance system is applied in a project of hot water pipeline installation, with accuracy controlled within 2 mm in 48-m distance, providing accurate line and grade controls and verifying the feasibility and reliability of the guidance system.

AlGaInN laser diode technology and systems for defence and security applications

NASA Astrophysics Data System (ADS)

Najda, Stephen P.; Perlin, Piotr; Suski, Tadek; Marona, Lucja; Boćkowski, Mike; Leszczyński, Mike; Wisniewski, Przemek; Czernecki, Robert; Kucharski, Robert; Targowski, Grzegorz; Watson, Scott; Kelly, Antony E.

2015-05-01

The latest developments in AlGaInN laser diode technology are reviewed for defence and security applications such as underwater communications. The AlGaInN material system allows for laser diodes to be fabricated over a very wide range of wavelengths from u.v., ~380nm, to the visible ~530nm, by tuning the indium content of the laser GaInN quantum well. Thus AlGaInN laser diode technology is a key enabler for the development of new disruptive system level applications in displays, telecom, defence and other industries.

Free-space and underwater GHz data transmission using AlGaInN laser diode technology

NASA Astrophysics Data System (ADS)

Najda, S. P.; Perlin, P.; Suski, T.; Marona, L.; Boćkowski, M.; Leszczyński, M.; Wisniewski, P.; Czernecki, R.; Kucharski, R.; Targowski, G.; Watson, S.; Kelly, A. E.

2016-05-01

Laser diodes fabricated from the AlGaInN material system is an emerging technology for defence and security applications; in particular for free space laser communication. Conventional underwater communication is done acoustically with very slow data rates, short reach, and vulnurable for interception. AlGaInN blue-green laser diode technology allows the possibility of both airbourne links and underwater telecom that operate at very fast data rates (GHz), long reach (100's of metres underwater) and can also be quantum encrypted. The latest developments in AlGaInN laser diode technology are reviewed for defence and security applications. The AlGaInN material system allows for laser diodes to be fabricated over a very wide range of wavelengths from u.v., ~380nm, to the visible ~530nm, by tuning the indium content of the laser GaInN quantum well. Ridge waveguide laser diode structures are fabricated to achieve single mode operation with optical powers of <100mW. Visible light communications at high frequency (up to 2.5 Gbit/s) using a directly modulated 422nm Galliumnitride (GaN) blue laser diode is reported in free-space and underwater.

Energy efficient lighting and communications

NASA Astrophysics Data System (ADS)

Zhou, Z.; Kavehrad, M.; Deng, P.

2012-01-01

As Light-Emitting Diode (LED)'s increasingly displace incandescent lighting over the next few years, general applications of Visible Light Communication (VLC) technology are expected to include wireless internet access, vehicle-to-vehicle communications, broadcast from LED signage, and machine-to-machine communications. An objective in this paper is to reveal the influence of system parameters on the power distribution and communication quality, in a general plural sources VLC system. It is demonstrated that sources' Half-Power Angles (HPA), receivers' Field-Of Views (FOV), sources layout and the power distribution among sources are significant impact factors. Based on our findings, we developed a method to adaptively change working status of each LED respectively according to users' locations. The program minimizes total power emitted while simultaneously ensuring sufficient light intensity and communication quality for each user. The paper also compares Orthogonal Frequency-Division Multiplexing (OFDM) and On-Off Keying (OOK) signals performance in indoor optical wireless communications. The simulation is carried out for different locations where different impulse response distortions are experienced. OFDM seems a better choice than prevalent OOK for indoor VLC due to its high resistance to multi-path effect and delay spread. However, the peak-to-average power limitations of the method must be investigated for lighting LEDs.

Light-Emitting Diodes: Exploration of Underlying Physics

ERIC Educational Resources Information Center

Etkina, Eugenia; Planinšic, Gorazd

2014-01-01

This paper is the second in the series of LED-dedicated papers that have a goal to systematically investigate the use of LEDs in a general physics course. The first paper, published in the February 2014 issue, provided an overview of the course units where LEDs can be used and suggested three different ways of utilizing LEDs in an introductory…

UV emissions from low energy artificial light sources.

PubMed

Fenton, Leona; Moseley, Harry

2014-01-01

Energy efficient light sources have been introduced across Europe and many other countries world wide. The most common of these is the Compact Fluorescent Lamp (CFL), which has been shown to emit ultraviolet (UV) radiation. Light Emitting Diodes (LEDs) are an alternative technology that has minimal UV emissions. This brief review summarises the different energy efficient light sources available on the market and compares the UV levels and the subsequent effects on the skin of normal individuals and those who suffer from photodermatoses. © 2013 John Wiley & Sons A/S. Published by John Wiley & Sons Ltd.

NASA Sponsors Cancer Research at Children's Hospital

NASA Technical Reports Server (NTRS)

1998-01-01

NASA Administrator Dan Goldin (left), during a visit at Children's Hospital of Wisconsin in Milwaukee, Wisconsin, discussed how NASA's special lighting technology may soon treat cancer. Goldin talked with Dr.Harry Whelan (right) and Dr. Kerneth Reichert (center left), both pediatric neurologists with the Hospital and professors at the Medical College of Wisconsin in Milwaukee. Accompanied by Astronaut Mary Ellen Weber, Goldin was shown this innovative treatment, called Photodynamic Therapy, a method used to destroy the tumor without damaging the delicate brain tissue around it. The treatment uses tiny pinhead-size Light Emitting Diodes (LEDs) developed for Space Product Development plant growth experiments.

Microgravity

NASA Image and Video Library

1998-08-01

NASA Administrator Dan Goldin (left), during a visit at Children's Hospital of Wisconsin in Milwaukee, Wisconsin, discussed how NASA's special lighting technology may soon treat cancer. Goldin talked with Dr.Harry Whelan (right) and Dr. Kerneth Reichert (center left), both pediatric neurologists with the Hospital and professors at the Medical College of Wisconsin in Milwaukee. Accompanied by Astronaut Mary Ellen Weber, Goldin was shown this innovative treatment, called Photodynamic Therapy, a method used to destroy the tumor without damaging the delicate brain tissue around it. The treatment uses tiny pinhead-size Light Emitting Diodes (LEDs) developed for Space Product Development plant growth experiments.

Novel organic LED structures based on a highly conductive polymeric photonic crystal electrode.

PubMed

Petti, Lucia; Rippa, Massimo; Capasso, Rossella; Nenna, Giuseppe; Del Mauro, Anna De Girolamo; Maglione, Maria Grazia; Minarini, Carla

2013-08-09

In this work we demonstrate the possibility to realize a novel unconventional ITO-free organic light emitting diode (OLED) utilizing a photonic polymeric electrode. Combining electron beam lithography and a plasma etching process to partially structure the highly conductive poly(3,4 ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) it is possible to realize an embedded photonic crystal (PC) structure. The realized PC-anode drastically reduces the light trapped in the OLED, demonstrating the possibility to eliminate further process stages and making it easier to use this technology even on rollable and flexible substrates.

Novel organic LED structures based on a highly conductive polymeric photonic crystal electrode

NASA Astrophysics Data System (ADS)

Petti, Lucia; Rippa, Massimo; Capasso, Rossella; Nenna, Giuseppe; De Girolamo Del Mauro, Anna; Grazia Maglione, Maria; Minarini, Carla

2013-08-01

In this work we demonstrate the possibility to realize a novel unconventional ITO-free organic light emitting diode (OLED) utilizing a photonic polymeric electrode. Combining electron beam lithography and a plasma etching process to partially structure the highly conductive poly(3,4 ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) it is possible to realize an embedded photonic crystal (PC) structure. The realized PC-anode drastically reduces the light trapped in the OLED, demonstrating the possibility to eliminate further process stages and making it easier to use this technology even on rollable and flexible substrates.

Advanced helmet vision system (AHVS) integrated night vision helmet mounted display (HMD)

NASA Astrophysics Data System (ADS)

Ashcraft, Todd W.; Atac, Robert

2012-06-01

Gentex Corporation, under contract to Naval Air Systems Command (AIR 4.0T), designed the Advanced Helmet Vision System to provide aircrew with 24-hour, visor-projected binocular night vision and HMD capability. AHVS integrates numerous key technologies, including high brightness Light Emitting Diode (LED)-based digital light engines, advanced lightweight optical materials and manufacturing processes, and innovations in graphics processing software. This paper reviews the current status of miniaturization and integration with the latest two-part Gentex modular helmet, highlights the lessons learned from previous AHVS phases, and discusses plans for qualification and flight testing.

Demonstration of a simplified optical mouse lighting module by integrating the non-Lambertian LED chip and the free-form surface.

PubMed

Pan, Jui-Wen; Tu, Sheng-Han

2012-05-20

A cost-effective, high-throughput, and high-yield method for the efficiency enhancement of an optical mouse lighting module is proposed. We integrated imprinting technology and free-form surface design to obtain a lighting module with high illumination efficiency and uniform intensity distribution. The imprinting technique can increase the light extraction efficiency and modulate the intensity distribution of light-emitting diodes. A modulated light source was utilized to add a compact free-form surface element to create a lighting module with 95% uniformity and 80% optical efficiency.

Microgravity

NASA Image and Video Library

2004-04-15

Astroculture is a suite of technologies used to produce and maintain a closed controlled environment for plant growth. The two most recent missions supported growth of potato, dwarf wheat, and mustard plants and provided scientists with the first opportunity to conduct true plant research in space. Light emitting diodes have particular usefulness for plant growth lighting because they emit a much smaller amount of radiant heat than do conventional lighting sources and because they have potential of directing a higher percentage of the emitted light onto plants surfaces. Furthermore, the high output LED's have emissions in the 600-700 nm waveband, which is of highest efficiency for photosynthesis by plants.

Microgravity

NASA Image and Video Library

2004-04-15

Astroculture is a suite of technologies used to produce and maintain a closed controlled environment for plant growth. The two most recent missions supported growth of potato, dwarf wheat, and mustard plants, and provided scientists with the first opportunity to conduct true plant research in space. Light emitting diodes have particular usefulness for plant growth lighting because they emit a much smaller amount of radiant heat than do conventional lighting sources and because they have potential of directing a higher percentage of the emitted light onto plants surfaces. Furthermore, the high output LED's have emissions in the 600-700 nm waveband, which is of highest efficiency for photosynthesis by plants.

Effect of the laser and light-emitting diode (LED) phototherapy on midpalatal suture bone formation after rapid maxilla expansion: a Raman spectroscopy analysis.

PubMed

Rosa, Cristiane Becher; Habib, Fernando Antonio Lima; de Araújo, Telma Martins; Aragão, Juliana Silveira; Gomes, Rafael Soares; Barbosa, Artur Felipe Santos; Silveira, Landulfo; Pinheiro, Antonio L B

2014-05-01

The aim of this study was to analyze the effect of laser or light-emitting diode (LED) phototherapy on the bone formation at the midpalatal suture after rapid maxilla expansion. Twenty young adult male rats were divided into four groups with 8 days of experimental time: group 1, no treatment; group 2, expansion; group 3, expansion and laser irradiation; and group 4, expansion and LED irradiation. In groups 3 and 4, light irradiation was in the first, third, and fifth experimental days. In all groups, the expansion was accomplished with a helicoid 0.020" stainless steel orthodontic spring. A diode laser (λ780 nm, 70 mW, spot of 0.04 cm(2), t = 257 s, spatial average energy fluence (SAEF) of 18 J/cm(2)) or a LED (λ850 nm, 150 mW ± 10 mW, spot of 0.5 cm(2), t = 120 s, SAEF of 18 J/cm(2)) were used. The samples were analyzed by Raman spectroscopy carried out at midpalatal suture and at the cortical area close to the suture. Two Raman shifts were analyzed: ∼ 960 (phosphate hydroxyapatite) and ∼ 1,450 cm(-1) (lipids and protein). Data was submitted to statistical analysis. Significant statistical difference (p ≤ 0.05) was found in the hydroxyapatite (CHA) peaks among the expansion group and the expansion and laser or LED groups. The LED group presented higher mean peak values of CHA. No statistical differences were found between the treated groups as for collagen deposition, although LED also presented higher mean peak values. The results of this study using Raman spectral analysis indicate that laser and LED light irradiation improves deposition of CHA in the midpalatal suture after orthopedic expansion.

Study on the structural, optical, and electrical properties of the yellow light-emitting diode grown on free-standing (0001) GaN substrate

NASA Astrophysics Data System (ADS)

Deng, Gaoqiang; Zhang, Yuantao; Yu, Ye; Yan, Long; Li, Pengchong; Han, Xu; Chen, Liang; Zhao, Degang; Du, Guotong

2018-04-01

In this paper, GaN-based yellow light-emitting diodes (LEDs) were homoepitaxially grown on free-standing (0001) GaN substrates by metal-organic chemical vapor deposition. X-ray diffraction (XRD), photoluminescence (PL), and electroluminescence (EL) measurements were conducted to investigate the structural, optical, and electrical properties of the yellow LED. The XRD measurement results showed that the InGaN/GaN multiple quantum wells (MQWs) in the LED structure have good periodicity because the distinct MQWs related higher order satellite peaks can be clearly observed from the profile of 2θ-ω XRD scan. The low temperature (10 K) and room temperature PL measurement results yield an internal quantum efficiency of 16% for the yellow LED. The EL spectra of the yellow LED present well Gaussian distribution with relatively low linewidth (47-55 nm), indicating the homogeneous In-content in the InGaN quantum well layers in the yellow LED structure. It is believed that this work will aid in the future development of GaN on GaN LEDs with long emission wavelength.

Emission enhancement of light-emitting diode by localized surface plasmon induced by Ag/p-GaN double grating

NASA Astrophysics Data System (ADS)

Xie, Ruijie; Li, Zhiquan; Li, Xin; Gu, Erdan; Niu, Liyong; Sha, Xiaopeng

2018-07-01

In this paper, a new type of light-emitting diodes (LEDs) structure is designed to enhance the light emission efficiency of GaN-based LEDs. The structure mainly includes Ag grating, ITO layer and p-GaN grating. The principle of stimulating the localized surface plasmon to improve the luminous characteristics of the LED by using this structure is discussed. Based on the COMSOL software, the finite element method is used to simulate the LED structure. The normalized radiated powers, the normalized absorbed powers under different wavelength and geometric parameters, and the distribution of the electric field with the particular geometric parameters are obtained. The simulation results show that with a local ITO thickness of 32 nm, an etching depth of 29 nm, a grating period of 510 nm and a duty ratio of 0.5, the emission intensity of the designed GaN-based LED structure has increased by nearly 55 times than the ordinary LED providing a reliable foundation for the development of high-performance GaN-based LEDs.

Indoor visible light communication localization system utilizing received signal strength indication technique and trilateration method

NASA Astrophysics Data System (ADS)

Mousa, Farag I. K.; Almaadeed, Noor; Busawon, Krishna; Bouridane, Ahmed; Binns, Richard; Elliot, Ian

2018-01-01

Visible light communication (VLC) based on light-emitting diodes (LEDs) technology not only provides higher data rate for indoor wireless communications and offering room illumination but also has the potential for indoor localization. VLC-based indoor positioning using the received optical power levels from emitting LEDs is investigated. We consider both scenarios of line-of-sight (LOS) and LOS with non-LOS (LOSNLOS) positioning. The performance of the proposed system is evaluated under both noisy and noiseless channel as is the impact of different location codes on positioning error. The analytical model of the system with noise and the corresponding numerical evaluation for a range of signal-to-noise ratio (SNR) are presented. The results show that an accuracy of <10 cm on average is achievable at an SNR>12 dB.

Wavelength tunable InGaN/GaN nano-ring LEDs via nano-sphere lithography

PubMed Central

Wang, Sheng-Wen; Hong, Kuo-Bin; Tsai, Yu-Lin; Teng, Chu-Hsiang; Tzou, An-Jye; Chu, You-Chen; Lee, Po-Tsung; Ku, Pei-Cheng; Lin, Chien-Chung; Kuo, Hao-Chung

2017-01-01

In this research, nano-ring light-emitting diodes (NRLEDs) with different wall width (120 nm, 80 nm and 40 nm) were fabricated by specialized nano-sphere lithography technology. Through the thinned wall, the effective bandgaps of nano-ring LEDs can be precisely tuned by reducing the strain inside the active region. Photoluminescence (PL) and time-resolved PL measurements indicated the lattice-mismatch induced strain inside the active region was relaxed when the wall width is reduced. Through the simulation, we can understand the strain distribution of active region inside NRLEDs. The simulation results not only revealed the exact distribution of strain but also predicted the trend of wavelength-shifted behavior of NRLEDs. Finally, the NRLEDs devices with four-color emission on the same wafer were demonstrated. PMID:28256529

Final Report DOE SSL Grant (No. DE-EE0006673) Advanced Light Extraction Structure for OLED Lighting

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cooper, Gregory; Monickam, Selina

The innovation proposed in this grant is to demonstrate a novel internal light extraction (ILE) design that can maximize the energy efficiency of Organic Light Emitting Diode (OLED) lighting devices without negatively impacting the device voltage, efficacy or angular color dependences. Even though, OLEDs have unique features compared to its inorganic counterparts, LEDs, in terms of technology development and market readiness levels, it still lags LEDs by several years. The main challenges as identified in the National Research Council’s 2013 Assessment on Solid State Lighting, are the cost of the materials and the low light extraction efficacy [1]. Improving themore » light extraction will improve both the $/Klm and lm/W, two important metrics DOE uses to measure the cost effectiveness of a light source.« less

On-chip very low junction temperature GaN-based light emitting diodes by selective ion implantation

NASA Astrophysics Data System (ADS)

Cheng, Yun-Wei; Chen, Hung-Hsien; Ke, Min-Yung; Chen, Cheng-Pin; Huang, JianJang

2008-08-01

We propose an on-wafer heat relaxation technology by selectively ion-implanted in part of the p-type GaN to decrease the junction temperature in the LED structure. The Si dopant implantation energy and concentration are characterized to exhibit peak carrier density 1×1018 cm-3 at the depth of 137.6 nm after activation in nitrogen ambient at 750 °C for 30 minutes. The implantation schedule is designed to neutralize the selected region or to create a reverse p-n diode in the p-GaN layer, which acts as the cold zone for heat dissipation. The cold zone with lower effective carrier concentration and thus higher resistance is able to divert the current path. Therefore, the electrical power consumption through the cold zone was reduced, resulting in less optical power emission from the quantum well under the cold zone. Using the diode forward voltage method to extract junction temperature, when the injection current increases from 10 to 60 mA, the junction temperature of the ion-implanted LED increases from 34.3 °C to 42.3 °C, while that of the conventional one rises from 30.3 °C to 63.6 °C. At 100 mA, the output power of the ion-implanted device is 6.09 % higher than that of the conventional device. The slight increase of optical power is due to the increase of current density outside the cold zone region of the implanted device and reduced junction temperature. The result indicates that our approach improves thermal dissipation and meanwhile maintains the linearity of L-I curves.

Estimating the crash reduction and vehicle dynamics effects of flashing LED stop signs : final report.

DOT National Transportation Integrated Search

2014-01-01

A flashing LED stop sign is essentially a normal octagonal stop sign with light emitted diodes (LED) on the : stop signs corners. A hierarchical Bayes observational before/after study found an estimated reduction of : about 41.5% in right-angle cr...

Spatial emission distribution of InGaN/GaN light-emitting diodes depending on the pattern structures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, Kwanjae; Lee, Hyunjung; Lee, Cheul-Ro

2014-10-15

Highlights: • We study carrier lifetimes of InGaN/GaN LEDs fabricated on different PSS. • Spatial EL distribution was investigated depending on the pattern structure. • The carrier lifetime of the LEDs was compared with the spatial EL distribution. - Abstract: We investigated the emission characteristics of InGaN/GaN light-emitting diodes (LEDs) fabricated on lens-shaped (LS) patterned-sapphire substrates (PSS) by using time-resolved photoluminescence (TRPL) and confocal-scanning-electroluminescence microscopy (CSEM). The carrier lifetimes evaluated from the TRPL spectra for the LEDs on the LS-PSS (LS-LEDs) at 10 K were relatively shorter than those of the LEDs on a conventional planar substrate (C-LED). However, themore » carrier lifetimes for the LS-LEDs were relatively long compared to that of the C-LED at room temperature. In the CSEM images of the LS-LEDs, the emission beam around the center region of the LS pattern was relatively weaker than that of the edge region. In addition, the beam profile for the LS-LEDs showed different shapes according to the pattern structures. The emission beam around the boundary region of the LS pattern showed periodic fluctuation with the peak-to-peak distance of 814 nm.« less

Improved light extraction efficiency of InGaN-based multi-quantum well light emitting diodes by using a single die growth.

PubMed

Park, Min Joo; Kwon, K W; Kim, Y H; Park, S H; Kwak, Joon Seop

2011-05-01

We have demonstrated that the light extraction efficiency of the InGaN based multi-quantum well light-emitting diodes (LEDs) can be improved by using a single die growth (SDG) method. The SDG was performed by patterning the n-GaN and sapphire substrate with a size of single chip (600 x 250 microm2) by using a laser scriber, followed by the regrowth of the n-GaN and LED structures on the laser patterned n-GaN. We fabricated lateral LED chips having the SDG structures (SDG-LEDs), in which the thickness of the regrown n-GaN was varied from 2 to 6 microm. For comparison, we also fabricated conventional LED chips without the SDG structures. The SDG-LEDs showed lower operating voltage when compared to the conventional LEDs. In addition, the output power of the SDG-LEDs was significantly higher than that of the conventional LEDs. From optical ray tracing simulations, the increase in the thickness and sidewall angle of the regrown n-GaN and LED structures may enhance photon escapes from the tilted facets of the regrown n-GaN, followed by the increase in light output power and extraction efficiency of the SDG-LEDs.

Light Emitting Diode (LED) circular traffic signal lifetime management system.

DOT National Transportation Integrated Search

2011-02-01

The objective of this research is to build lifetime curves for red, yellow, and green LED circular traffic signals through 20,000-hr. accelerated stress testing of samples operating under Louisianas environmental conditions.

LED traffic signal management system : final report.

DOT National Transportation Integrated Search

2016-06-01

This research originated from the opportunity to develop a methodology to assess when LED (Light Emitting Diode) traffic signal modules begin to fail to meet the Institute of Transportation Engineers (ITE) performance specification for luminous inten...

Response of adult mosquitoes to light emitting diodes placed in resting boxes and in the field.

USDA-ARS?s Scientific Manuscript database

Resting boxes are passive devices used to attract and capture mosquitoes seeking shelter. Increasing the attractiveness of these devices could improve their effectiveness. Light emitting diodes (LEDs) can be attractive to mosquitoes when used together with other trapping devices. Therefore restin...

Promotion of neural sprouting using low-level green light-emitting diode phototherapy

NASA Astrophysics Data System (ADS)

Alon, Noa; Duadi, Hamootal; Cohen, Ortal; Samet, Tamar; Zilony, Neta; Schori, Hadas; Shefi, Orit; Zalevsky, Zeev

2015-02-01

We irradiated neuroblastoma SH-SY5Y cell line with low-level light-emitting diode (LED) illumination at a visible wavelength of 520 nm (green) and intensity of 100 mW/cm2. We captured and analyzed the cell morphology before LED treatment, immediately after, and 12 and 24 h after treatment. Our study demonstrated that LED illumination increases the amount of sprouting dendrites in comparison to the control untreated cells. This treatment also resulted in more elongated cells after treatment in comparison to the control cells and higher levels of expression of a differentiation related gene. This result is a good indication that the proposed method could serve in phototherapy treatment for increasing sprouting and enhancing neural network formation.

Hole injection and electron overflow improvement in InGaN/GaN light-emitting diodes by a tapered AlGaN electron blocking layer.

PubMed

Lin, Bing-Chen; Chen, Kuo-Ju; Wang, Chao-Hsun; Chiu, Ching-Hsueh; Lan, Yu-Pin; Lin, Chien-Chung; Lee, Po-Tsung; Shih, Min-Hsiung; Kuo, Yen-Kuang; Kuo, Hao-Chung

2014-01-13

A tapered AlGaN electron blocking layer with step-graded aluminum composition is analyzed in nitride-based blue light-emitting diode (LED) numerically and experimentally. The energy band diagrams, electrostatic fields, carrier concentration, electron current density profiles, and hole transmitting probability are investigated. The simulation results demonstrated that such tapered structure can effectively enhance the hole injection efficiency as well as the electron confinement. Consequently, the LED with a tapered EBL grown by metal-organic chemical vapor deposition exhibits reduced efficiency droop behavior of 29% as compared with 44% for original LED, which reflects the improvement in hole injection and electron overflow in our design.

A new spatial integration method for luminous flux determination of light-emitting diodes

NASA Astrophysics Data System (ADS)

Zhou, Xiaoli; Zhu, Shaolong; Shen, Haiping; Liu, Muqing

2010-10-01

Spatial integrated measurement using an integrating sphere is usually used for the luminous flux determination of light sources. Devices using an integrating sphere are bulky for use on a production assembly line. This paper proposes an alternative spatial integration method for accurately measuring the total luminous flux of light-emitting diodes (LEDs) having no backward emission. A compound parabolic concentrator is introduced to collect the light from an LED in conjunction with a detector which in turn measures the luminous flux. The study reported here combines both modeling and experiment to show the applicability of this novel method. The uncertainty in the measurements is then evaluated for the total luminous flux measurement from an LED.

Nitrogen-polar core-shell GaN light-emitting diodes grown by selective area metalorganic vapor phase epitaxy

NASA Astrophysics Data System (ADS)

Li, Shunfeng; Wang, Xue; Fündling, Sönke; Erenburg, Milena; Ledig, Johannes; Wei, Jiandong; Wehmann, Hergo H.; Waag, Andreas; Bergbauer, Werner; Mandl, Martin; Strassburg, Martin; Trampert, Achim; Jahn, Uwe; Riechert, Henning; Jönen, Holger; Hangleiter, Andreas

2012-07-01

Homogeneous nitrogen-polar GaN core-shell light emitting diode (LED) arrays were fabricated by selective area growth on patterned substrates. Transmission electron microscopy measurements prove the core-shell structure of the rod LEDs. Depending on the growth facets, the InGaN/GaN multi-quantum wells (MQWs) show different dimensions and morphology. Cathodoluminescence (CL) measurements reveal a MQWs emission centered at about 415 nm on sidewalls and another emission at 460 nm from top surfaces. CL line scans on cleaved rod also indicate the core-shell morphology. Finally, an internal quantum efficiency of about 28% at room temperature was determined by an all-optical method on a LED array.

GaN-Based Light-Emitting Diodes Grown on Nanoscale Patterned Sapphire Substrates with Void-Embedded Cortex-Like Nanostructures

NASA Astrophysics Data System (ADS)

Lin, Yu-Sheng; Yeh, J. Andrew

2011-09-01

High-efficiency GaN-based light-emitting diodes (LEDs) with an emitting wavelength of 438 nm were demonstrated utilizing nanoscale patterned sapphire substrates with void-embedded cortex-like nanostructures (NPSS-VECN). Unlike the previous nanopatterned sapphire substrates, the presented substrate has a new morphology that can not only improve the crystalline quality of GaN epilayers but also generate a void-embedded nanostructural layer to enhance light extraction. Under a driving current of 20 mA, the external quantum efficiency of an LED with NPSS-VECN is enhanced by 2.4-fold compared with that of the conventional LED. Moreover, the output powers of two devices respectively are 33.1 and 13.9 mW.

Controlled electroluminescence of n-ZnMgO/p-GaN light-emitting diodes

NASA Astrophysics Data System (ADS)

Goh, E. S. M.; Yang, H. Y.; Han, Z. J.; Chen, T. P.; Ostrikov, K.

2012-12-01

Effective control of room-temperature electroluminescence of n-ZnMgO/p-GaN light-emitting diodes (LEDs) over both emission intensity and wavelength is demonstrated. With varied Mg concentration, the intensity of LEDs in the near-ultraviolet region is increased due to the effective radiative recombination in the ZnMgO layer. Furthermore, the emission wavelength is shifted to the green/yellow spectral region by employing an indium-tin-oxide thin film as the dopant source, where thermally activated indium diffusion creates extra deep defect levels for carrier recombination. These results clearly demonstrate the effectiveness of controlled metal incorporation in achieving high energy efficiency and spectral tunability of the n-ZnMgO/p-GaN LED devices.

Performance improvement of AlGaN-based deep-ultraviolet light-emitting diodes via Al-composition graded quantum wells

NASA Astrophysics Data System (ADS)

Lu, Lin; Zhang, Yu; Xu, Fujun; Ding, Gege; Liu, Yuhang

2018-06-01

Characteristics of AlGaN-based deep-ultraviolet light-emitting diodes (DUV-LEDs) with step-like and Al-composition graded quantum wells have been investigated. The simulation results show that compared to DUV-LEDs with the conventional AlGaN multiple quantum wells (MQWs) structure, the light output power (LOP) and efficiency droop of DUV-LEDs with the Al-composition graded wells were remarkably improved. The key factor accounting for the improved performance is ascribed to the better modulation of carrier distribution in the quantum wells to increase the overlap between electron and hole wavefunctions, which contributes to more efficient recombination of electrons and holes, and thereby a significant enhancement in the LOP.

Comparative effects of exposure to different light sources (He-Ne laser, InGaAl diode laser, a specific type of noncoherent LED) on skin blood flow for the head.

PubMed

Pöntinen, P J; Aaltokallio, T; Kolari, P J

1996-01-01

This study assessed the effects of optic stimuli emitted by three different light sources on head skin blood flow. The irradiation effects of the He-Ne laser (632.8 nm, 10 mW, total energy appr. 9.4 J), the InGaAl diode laser (670 nm, 60 mW, appr. 108 J) and monochromatic light (635 nm, 112.5 mW, appr. 202.5 J) were measured using laser Doppler technology. The corresponding fluences (energy densities) varied from 0.01 J/cm2 (He-Ne) to a range of 0.12-0.72 J/cm2 (InGaAl) and 0.22-1.36 J/cm2 (LED). The investigation was completed under single-blind, placebo-controlled conditions where the subjects (10 male healthy volunteers) were exposed on two occasions to the placebo (LED)-device against the laser (He-Ne or InGaAl). A short lasting vasodilation, a 54 per cent increase (p < 0.05) in skin blood flow was seen after the InGaAl irradiation (fluences between 0.12-0.36 J/cm2) whereas the non-coherent monochromatic irradiation (0.68-1.36 J/cm2) used in this particular study decreased blood flow by 36 per cent (p < 0.05). The He-Ne irradiation (0.01 J/cm2) had no effect. Skin temperature changes were insignificant. Skin blood flow changes seemed to be related more on radiant exposures then coherency.

InGaN/GaN dot-in-nanowire monolithic LEDs and lasers on (001) silicon

NASA Astrophysics Data System (ADS)

Bhattacharya, P.; Hazari, A.; Jahangir, S.

2017-02-01

GaN-based nanowire arrays have been grown on (001)Si substrate by plasma-assisted molecular beam epitaxy and their structural and optical properties have been determined. InxGa1-xN disks inserted in the nanowires behave as quantum dots with emission ranging from visible to near-infrared. We have exploited these nanowire heterostructure arrays to realize light-emitting diodes and diode lasers in which the quantum dots form the active light emitting media. The fabrication and characteristics of 630nm light-emitting diodes and 1.3μm edge-emitting diode lasers are described.

High performance GaN-based LEDs on patterned sapphire substrate with patterned composite SiO2/Al2O3 passivation layers and TiO2/Al2O3 DBR backside reflector.

PubMed

Guo, Hao; Zhang, Xiong; Chen, Hongjun; Zhang, Peiyuan; Liu, Honggang; Chang, Hudong; Zhao, Wei; Liao, Qinghua; Cui, Yiping

2013-09-09

GaN-based light-emitting diodes (LEDs) on patterned sapphire substrate (PSS) with patterned composite SiO(2)/Al(2)O(3) passivation layers and TiO(2)/Al(2)O(3) distributed Bragg reflector (DBR) backside reflector have been proposed and fabricated. Highly passivated Al(2)O(3) layer deposited on indium tin oxide (ITO) layer with excellent uniformity and quality has been achieved with atomic layer deposition (ALD) technology. With a 60 mA current injection, an enhancement of 21.6%, 59.7%, and 63.4% in the light output power (LOP) at 460 nm wavelength was realized for the LED with the patterned composite SiO(2)/Al(2)O(3) passivation layers, the LED with the patterned composite SiO(2)/Al(2)O(3) passivation layers and Ag mirror + 3-pair TiO(2)/SiO(2) DBR backside reflector, and the LED with the patterned composite SiO(2)/Al(2)O(3) passivation layer and Ag mirror + 3-pair ALD-grown TiO(2)/Al(2)O(3) DBR backside reflector as compared with the conventional LED only with a single SiO(2) passivation layer, respectively.

Unclassified Publications of Lincoln Laboratory. Volume 5

DTIC Science & Technology

1975-12-15

10 TN-1974-36 LIGHT - EMITTING DIODES (LED) JA-4295 LIGHT SCATTERING JA-4456 LINCOLN DIGITAL VOICE TERMINAL TN-1975-53, TN-1975-65 LINCOLN...Hinkley J. O. Sample G. Dresselhaus T. C. Harman J. P. McVittie J. Filson p-n Junction PbSi_xSex Photo- J. P. Donnelly diodes Fabricated by Se...Room-Temperature Operation of GalnAsP/lnP Double- Heterostructure Diode Lasers Emitting at 1.1 (im Transparent Heat Mirrors for Solar-Energy

Substrate-Free InGaN/GaN Nanowire Light-Emitting Diodes.

PubMed

Neplokh, Vladimir; Messanvi, Agnes; Zhang, Hezhi; Julien, Francois H; Babichev, Andrey; Eymery, Joel; Durand, Christophe; Tchernycheva, Maria

2015-12-01

We report on the demonstration of substrate-free nanowire/polydimethylsiloxane (PDMS) membrane light-emitting diodes (LEDs). Metal-organic vapour-phase epitaxy (MOVPE)-grown InGaN/GaN core-shell nanowires were encapsulated into PDMS layer. After metal deposition to p-GaN, a thick PDMS cap layer was spin-coated and the membrane was manually peeled from the sapphire substrate, flipped upside down onto a steel holder, and transparent indium tin oxide (ITO) contact to n-GaN was deposited. The fabricated LEDs demonstrate rectifying diode characteristics. For the electroluminescence (EL) measurements, the samples were manually bonded using silver paint. The EL spectra measured at different applied voltages demonstrate a blue shift with the current increase. This shift is explained by the current injection into the InGaN areas of the active region with different average indium content.

InGaN/GaN tunnel junctions for hole injection in GaN light emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Krishnamoorthy, Sriram, E-mail: krishnamoorthy.13@osu.edu, E-mail: rajan@ece.osu.edu; Akyol, Fatih; Rajan, Siddharth, E-mail: krishnamoorthy.13@osu.edu, E-mail: rajan@ece.osu.edu

InGaN/GaN tunnel junction contacts were grown using plasma assisted molecular beam epitaxy (MBE) on top of a metal-organic chemical vapor deposition (MOCVD)-grown InGaN/GaN blue (450 nm) light emitting diode. A voltage drop of 5.3 V at 100 mA, forward resistance of 2 × 10{sup −2} Ω cm{sup 2}, and a higher light output power compared to the reference light emitting diodes (LED) with semi-transparent p-contacts were measured in the tunnel junction LED (TJLED). A forward resistance of 5 × 10{sup −4} Ω cm{sup 2} was measured in a GaN PN junction with the identical tunnel junction contact as the TJLED, grown completely by MBE. Themore » depletion region due to the impurities at the regrowth interface between the MBE tunnel junction and the MOCVD-grown LED was hence found to limit the forward resistance measured in the TJLED.« less

Hydrothermal growth of n-ZnO films on a patterned p-GaN epilayer and its application in heterojunction light-emitting diodes

NASA Astrophysics Data System (ADS)

Ko, Rong-Ming; Wang, Shui-Jinn; Chen, Ching-Yi; Wu, Cheng-Han; Lin, Yan-Ru; Lo, Hsin-Ming

2017-04-01

The hydrothermal growth (HTG) of crystalline n-ZnO films on both the nonpatterned and patterned p-GaN epilayers with a honeycomb array of etched holes is demonstrated, and its application in n-ZnO/p-GaN heterojunction light-emitting diodes (HJ-LEDs) is reported. The results reveal that an HTG n-ZnO film on a patterned p-GaN layer exhibits a high-quality single crystal with FWHMs of 0.463 and 0.983° obtained from a ω-rocking curve and a ϕ-scan pattern, respectively, which are much better than those obtained on a nonpatterned p-GaN layer. In addition, the n-ZnO/patterned p-GaN HJ-LED exhibited a much better rectifying diode behavior owing to having a higher n-ZnO film crystallinity quality and an improved interface with the p-GaN layer. Strong violet and violet-blue lights emitted from the n-ZnO/patterned p-GaN HJ-LED at around 405, 412, and 430 nm were analyzed.

Computer-Based Experiment for Determining Planck's Constant Using LEDs

ERIC Educational Resources Information Center

Zhou, Feng; Cloninger, Todd

2008-01-01

Visible light emitting diodes (LEDs) have been widely used as power indicators. However, after the power is switched off, it takes a while for the LED to go off. Many students were fascinated by this simple demonstration. In this paper, by making use of computer-based data acquisition and modeling, we show the voltage across the LED undergoing an…

Transparent perovskite light-emitting diodes by employing organic-inorganic multilayer transparent top electrodes

NASA Astrophysics Data System (ADS)

Liang, Junqing; Guo, Xiaoyang; Song, Li; Lin, Jie; Hu, Yongsheng; Zhang, Nan; Liu, Xingyuan

2017-11-01

Perovskite light-emitting diodes (PeLEDs) have attracted much attention in the past two years due to their high photoluminescence quantum efficiencies and wavelength tuneable characteristics. In this work, transparent PeLEDs (TPeLEDs) have been reported with organic-inorganic multilayer transparent top electrodes that have more convenient control of the organic/electrode interface. By optimizing the thickness of the MoO3 layer in the top electrode, the best average transmittance of 47.21% has been obtained in the TPeLED in the wavelength range of 380-780 nm. In addition, the TPeLED exhibits a maximum luminance of 6380 cd/m2, a maximum current efficiency (CE) of 3.50 cd/A, and a maximum external quantum efficiency (EQE) of 0.85% from the bottom side together with a maximum luminance of 3380 cd/m2, a maximum CE of 1.47 cd/A, and a maximum EQE of 0.36% from the top side. The total EQE of the TPeLED is about 86% of that of the reference device, indicating efficient TPeLED achieved in this work, which could have significant contribution to PeLEDs for see-through displays.

The performance of quantum dots-based white light-emitting diodes

NASA Astrophysics Data System (ADS)

Chen, Kuan-Lin; Chung, Shu-Ru

2017-08-01

Recently, the investigation of quantum dots (QDs) as a color converter for white light-emitting diodes (WLEDs) application has attracted a great deal of attention. Because the narrow emission wavelength of QDs can be controlled by their particle sizes and compositions, which is facilitated to improve the color gamut of display as well as color rendering index (CRI) and the correlated color temperature (CCT) of WLEDs. In a typical commercially available LCD display, the color gamut is approximately to 75 % which is defined by the National Television System Committee (NTSC). In order to enhance NTSC, the full width at half-maximum (FWHM) of color converter should be less than 30 nm. Therefore, the QDs are the best choice for display application due to the FWHM of QDs is meet the demand of display application. In this study, the hot injection method with one-pot process is used to synthesis of colloidal ternary ZnCdSe green (G-) and red-emission (R-) QDs with a narrow emission wavelength around 537 and 610 nm. By controlling the complex reagents-stearic acid (SA) and lauric acid (LA), high performance of G- and R-QDs can be prepared. The quantum yields (QYs), particle sizes and FWHM for G- and R-QDs are 70, 30 %, 3.2 +/- 0.5, 4.1 +/- 0.5 nm and 25, 26 nm, respectively. In order to explore the performance of QDs-based WLEDs, mixing ratios effect between G-QD and R-QD are studied and the WLED is packed as conformal-type. Different ratios of R-QD and G-QD (1:10, 1:20 and 1:30) are mixed and fill up the 3020 SMD blue-InGaN LED, and named as LED-10, LED-20 and LED-30. After that, UV curable gel is deposited on the top of QD layer to form WLED and named as LED-10*, LED-20* and LED-30*. The results show that the Commission International d'Eclairage (CIE) chromaticity coordinates, color rendering index (CRI), luminous efficacy of LED-10*, LED-20* and LED-30* are (0.27, 0.21), 53, 1.9 lm/W, (0.29, 0.30), 72, 3.3 lm/W and (0.25, 0.34), 45, 6.8 lm/W, respectively. We can find that the positions of CIE can be controlled simply by adjusting the ratios of G- and R-QDs. Besides, the LED-10 and LED-20* device shows the high CRI, implying that it has great potential for application on backlight of display technology and solid-state lighting.

Alternatives to Pyrotechnic Distress Signals; Supplemental Report

DTIC Science & Technology

2015-08-01

distribution of an incandescent lamp as compared to a specific white LED . ...................... 3  Figure 3. Spectral distribution of a “cool” white LED ...of common lamps2. Figure 2 shows the spectral distribution of an incandescent lamp as compared to a “cool” white LED . Note the LED peak intensity in...project effort that developed a specification for a light-emitting diode ( LED ) signal characteristic as an alternative to pyrotechnic, maritime

Enhancement of light output power of GaN-based light-emitting diodes with photonic quasi-crystal patterned on p-GaN surface and n-side sidewall roughing.

PubMed

Lai, Fang-I; Yang, Jui-Fu

2013-05-17

In this paper, GaN-based light-emitting diodes (LEDs) with photonic quasi-crystal (PQC) structure on p-GaN surface and n-side roughing by nano-imprint lithography are fabricated and investigated. At an injection current of 20 mA, the LED with PQC structure on p-GaN surface and n-side roughing increased the light output power of the InGaN/GaN multiple quantum well LEDs by a factor of 1.42, and the wall-plug efficiency is 26% higher than the conventional GaN-based LED type. After 500-h life test (55°C/50 mA), it was found that the normalized output power of GaN-based LED with PQC structure on p-GaN surface and n-side roughing only decreased by 6%. These results offer promising potential to enhance the light output powers of commercial light-emitting devices using the technique of nano-imprint lithography.

Metal-interconnection-free integration of InGaN/GaN light emitting diodes with AlGaN/GaN high electron mobility transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Chao; Cai, Yuefei; Liu, Zhaojun

2015-05-04

We report a metal-interconnection-free integration scheme for InGaN/GaN light emitting diodes (LEDs) and AlGaN/GaN high electron mobility transistors (HEMTs) by combining selective epi removal (SER) and selective epitaxial growth (SEG) techniques. SER of HEMT epi was carried out first to expose the bottom unintentionally doped GaN buffer and the sidewall GaN channel. A LED structure was regrown in the SER region with the bottom n-type GaN layer (n-electrode of the LED) connected to the HEMTs laterally, enabling monolithic integration of the HEMTs and LEDs (HEMT-LED) without metal-interconnection. In addition to saving substrate real estate, minimal interface resistance between the regrownmore » n-type GaN and the HEMT channel is a significant improvement over metal-interconnection. Furthermore, excellent off-state leakage characteristics of the driving transistor can also be guaranteed in such an integration scheme.« less

Efficiency of True-Green Light Emitting Diodes: Non-Uniformity and Temperature Effects

PubMed Central

Titkov, Ilya E.; Karpov, Sergey Yu.; Yadav, Amit; Mamedov, Denis; Zerova, Vera L.

2017-01-01

External quantum efficiency of industrial-grade green InGaN light-emitting diodes (LEDs) has been measured in a wide range of operating currents at various temperatures from 13 K to 300 K. Unlike blue LEDs, the efficiency as a function of current is found to have a multi-peak character, which could not be fitted by a simple ABC-model. This observation correlated with splitting of LED emission spectra into two peaks at certain currents. The characterization data are interpreted in terms of non-uniformity of the LED active region, which is tentatively attributed to extended defects like V-pits. We suggest a new approach to evaluation of temperature-dependent light extraction and internal quantum efficiencies taking into account the active region non-uniformity. As a result, the temperature dependence of light extraction and internal quantum efficiencies have been evaluated in the temperature range mentioned above and compared with those of blue LEDs. PMID:29156543

Design of p-type cladding layers for tunnel-injected UV-A light emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Yuewei; Krishnamoorthy, Sriram; Akyol, Fatih

Here, we discuss the engineering of p-AlGaN cladding layers for achieving efficient tunnel-injected III-Nitride ultraviolet light emitting diodes (UV LEDs) in the UV-A spectral range. We show that the capacitance-voltage measurements can be used to estimate the compensation and doping in the p-AlGaN layers located between the multi-quantum well region and the tunnel junction layer. By increasing the p-type doping concentration to overcome the background compensation, on-wafer external quantum efficiency and wall-plug efficiency of 3.37% and 1.62%, respectively, were achieved for the tunnel-injected UV LEDs emitting at 325 nm. We also show that interband tunneling hole injection can be usedmore » to realize UV LEDs without any acceptor doping. The work discussed here provides new understanding of hole doping and transport in AlGaN-based UV LEDs and demonstrates the excellent performance of tunnel-injected LEDs for the UV-A wavelength range.« less

Design of p-type cladding layers for tunnel-injected UV-A light emitting diodes

DOE PAGES

Zhang, Yuewei; Krishnamoorthy, Sriram; Akyol, Fatih; ...

2016-11-09

Here, we discuss the engineering of p-AlGaN cladding layers for achieving efficient tunnel-injected III-Nitride ultraviolet light emitting diodes (UV LEDs) in the UV-A spectral range. We show that the capacitance-voltage measurements can be used to estimate the compensation and doping in the p-AlGaN layers located between the multi-quantum well region and the tunnel junction layer. By increasing the p-type doping concentration to overcome the background compensation, on-wafer external quantum efficiency and wall-plug efficiency of 3.37% and 1.62%, respectively, were achieved for the tunnel-injected UV LEDs emitting at 325 nm. We also show that interband tunneling hole injection can be usedmore » to realize UV LEDs without any acceptor doping. The work discussed here provides new understanding of hole doping and transport in AlGaN-based UV LEDs and demonstrates the excellent performance of tunnel-injected LEDs for the UV-A wavelength range.« less

Green perovskite light emitting diodes based on the ITO/Al2O3/CsPbBr3 heterojunction structure

NASA Astrophysics Data System (ADS)

Zhuang, Shiwei; Ma, Xue; Hu, Daqiang; Dong, Xin; Zhang, Yuantao; Zhang, Baolin

2018-03-01

Perovskite light emitting diodes (PeLEDs) now emerge as a promising new optoelectronic application field for these amazing semiconductors. For the purpose of investigating the device structures and light emission mechanisms of PeLEDs, we have fabricated green PeLEDs based on the ITO/Al2O3/CsPbBr3 heterojunction structure. The emission layer inorganic perovskite CsPbBr3 film with small grain sizes (∼28.9 nm) was prepared using a two-step method. The device exhibits a typical rectification behavior with turn-on voltage of ∼6 V. The EL emission band is narrow with the FWHM of ∼25 nm. The peak EQE of the device was ∼0.09%. The working mechanism of the device is also discussed. The result of the present work provides a feasible innovation idea of PeLEDs fabrication and great potentials for the development of perovskite based LEDs.

Less strained and more efficient GaN light-emitting diodes with embedded silica hollow nanospheres

PubMed Central

Kim, Jonghak; Woo, Heeje; Joo, Kisu; Tae, Sungwon; Park, Jinsub; Moon, Daeyoung; Park, Sung Hyun; Jang, Junghwan; Cho, Yigil; Park, Jucheol; Yuh, Hwankuk; Lee, Gun-Do; Choi, In-Suk; Nanishi, Yasushi; Han, Heung Nam; Char, Kookheon; Yoon, Euijoon

2013-01-01

Light-emitting diodes (LEDs) become an attractive alternative to conventional light sources due to high efficiency and long lifetime. However, different material properties between GaN and sapphire cause several problems such as high defect density in GaN, serious wafer bowing, particularly in large-area wafers, and poor light extraction of GaN-based LEDs. Here, we suggest a new growth strategy for high efficiency LEDs by incorporating silica hollow nanospheres (S-HNS). In this strategy, S-HNSs were introduced as a monolayer on a sapphire substrate and the subsequent growth of GaN by metalorganic chemical vapor deposition results in improved crystal quality due to nano-scale lateral epitaxial overgrowth. Moreover, well-defined voids embedded at the GaN/sapphire interface help scatter lights effectively for improved light extraction, and reduce wafer bowing due to partial alleviation of compressive stress in GaN. The incorporation of S-HNS into LEDs is thus quite advantageous in achieving high efficiency LEDs for solid-state lighting. PMID:24220259

Direct integration of polycrystalline graphene into light emitting diodes by plasma-assisted metal-catalyst-free synthesis.

PubMed

Kim, Yong Seung; Joo, Kisu; Jerng, Sahng-Kyoon; Lee, Jae Hong; Moon, Daeyoung; Kim, Jonghak; Yoon, Euijoon; Chun, Seung-Hyun

2014-03-25

The integration of graphene into devices is a challenging task because the preparation of a graphene-based device usually includes graphene growth on a metal surface at elevated temperatures (∼1000 °C) and a complicated postgrowth transfer process of graphene from the metal catalyst. Here we report a direct integration approach for incorporating polycrystalline graphene into light emitting diodes (LEDs) at low temperature by plasma-assisted metal-catalyst-free synthesis. Thermal degradation of the active layer in LEDs is negligible at our growth temperature, and LEDs could be fabricated without a transfer process. Moreover, in situ ohmic contact formation is observed between DG and p-GaN resulting from carbon diffusion into the p-GaN surface during the growth process. As a result, the contact resistance is reduced and the electrical properties of directly integrated LEDs outperform those of LEDs with transferred graphene electrodes. This relatively simple method of graphene integration will be easily adoptable in the industrialization of graphene-based devices.

Modeling of light-emitting diode wavefronts for the optimization of transmission holograms.

PubMed

Karthaus, Daniela; Giehl, Markus; Sandfuchs, Oliver; Sinzinger, Stefan

2017-06-20

The objective of applying transmission holograms in automotive headlamp systems requires the adaptation of holograms to divergent and polychromatic light sources like light-emitting diodes (LEDs). In this paper, four different options to describe the scalar light waves emitted by a typical automotive LED are regarded. This includes a new approach to determine the LED's wavefront from interferometric measurements. Computer-generated holograms are designed considering the different LED approximations and recorded into a photopolymer. The holograms are reconstructed with the LED and the resulting images are analyzed to evaluate the quality of the wave descriptions. In this paper, we show that our presented new approach leads to better results in comparison to other wave descriptions. The enhancement is evaluated by the correlation between reconstructed and ideal images. In contrast to the next best approximation, a spherical wave, the correlation coefficient increased by 0.18% at 532 nm, 1.69% at 590 nm, and 0.75% at 620 nm.

Numerical analysis of light extraction enhancement of GaN-based thin-film flip-chip light-emitting diodes with high-refractive-index buckling nanostructures

NASA Astrophysics Data System (ADS)

Yue, Qing-Yang; Yang, Yang; Cheng, Zhen-Jia; Guo, Cheng-Shan

2018-06-01

In this work, the light extraction efficiency enhancement of GaN-based thin-film flip-chip (TFFC) light-emitting diodes (LEDs) with high-refractive-index (TiO2) buckling nanostructures was studied using the three-dimensional finite difference time domain method. Compared with 2-D photonic crystals, the buckling structures have the advantages of a random directionality and a broad distribution in periodicity, which can effectively extract the guided light propagating in all azimuthal directions over a wide spectrum. Numerical studies revealed that the light extraction efficiency of buckling-structured LEDs reaches 1.1 times that of triangular lattice photonic crystals. The effects of the buckling structure feature sizes and the thickness of the N-GaN layer on the light extraction efficiency for TFFC LEDs were also investigated systematically. With optimized structural parameters, a significant light extraction enhancement of about 2.6 times was achieved for TiO2 buckling-structured TFFC LEDs compared with planar LEDs.

Portable, universal, and visual ion sensing platform based on the light emitting diode-based self-referencing-ion selective field-effect transistor.

PubMed

Zhang, Xiaowei; Han, Yanchao; Li, Jing; Zhang, Libing; Jia, Xiaofang; Wang, Erkang

2014-02-04

In this work, a novel and universal ion sensing platform was presented, which enables the visual detection of various ions with high sensitivity and selectivity. Coaxial potential signals (millivolt-scale) of the sample from the self-referencing (SR) ion selective chip can be transferred into the ad620-based amplifier with an output of volt-scale potentials. The amplified voltage is high enough to drive a light emitting diode (LED), which can be used as an amplifier and indicator to report the sample information. With this double amplification device (light emitting diode-based self-referencing-ion selective field-effect transistor, LED-SR-ISFET), a tiny change of the sample concentration can be observed with a distinguishable variation of LED brightness by visual inspection. This LED-based luminescent platform provided a facile, low-cost, and rapid sensing strategy without the need of additional expensive chemiluminescence reagent and instruments. Moreover, the SR mode also endows this device excellent stability and reliability. With this innovative design, sensitive determination of K(+), H(+), and Cl(-) by the naked eye was achieved. It should also be noticed that this sensing strategy can easily be extended to other ions (or molecules) by simply integrating the corresponding ion (or molecule) selective electrode.

Broadband light-emitting diode

DOEpatents

Fritz, Ian J.; Klem, John F.; Hafich, Michael J.

1998-01-01

A broadband light-emitting diode. The broadband light-emitting diode (LED) comprises a plurality of III-V compound semiconductor layers grown on a semiconductor substrate, with the semiconductor layers including a pair of cladding layers sandwiched about a strained-quantum-well active region having a plurality of different energy bandgaps for generating light in a wavelength range of about 1.3-2 .mu.m. In one embodiment of the present invention, the active region may comprise a first-grown quantum-well layer and a last-grown quantum-well layer that are oppositely strained; whereas in another embodiment of the invention, the active region is formed from a short-period superlattice structure (i.e. a pseudo alloy) comprising alternating thin layers of InGaAs and InGaAlAs. The use a short-period superlattice structure for the active region allows different layers within the active region to be simply and accurately grown by repetitively opening and closing one or more shutters in an MBE growth apparatus to repetitively switch between different growth states therein. The broadband LED may be formed as either a surface-emitting LED or as an edge-emitting LED for use in applications such as chemical sensing, fiber optic gyroscopes, wavelength-division-multiplexed (WDM) fiber-optic data links, and WDM fiber-optic sensor networks for automobiles and aircraft.

Broadband light-emitting diode

DOEpatents

Fritz, I.J.; Klem, J.F.; Hafich, M.J.

1998-07-14

A broadband light-emitting diode is disclosed. The broadband light-emitting diode (LED) comprises a plurality of III-V compound semiconductor layers grown on a semiconductor substrate, with the semiconductor layers including a pair of cladding layers sandwiched about a strained-quantum-well active region having a plurality of different energy bandgaps for generating light in a wavelength range of about 1.3--2 {micro}m. In one embodiment of the present invention, the active region may comprise a first-grown quantum-well layer and a last-grown quantum-well layer that are oppositely strained; whereas in another embodiment of the invention, the active region is formed from a short-period superlattice structure (i.e. a pseudo alloy) comprising alternating thin layers of InGaAs and InGaAlAs. The use a short-period superlattice structure for the active region allows different layers within the active region to be simply and accurately grown by repetitively opening and closing one or more shutters in an MBE growth apparatus to repetitively switch between different growth states therein. The broadband LED may be formed as either a surface-emitting LED or as an edge-emitting LED for use in applications such as chemical sensing, fiber optic gyroscopes, wavelength-divisionmultiplexed (WDM) fiber-optic data links, and WDM fiber-optic sensor networks for automobiles and aircraft. 10 figs.

Improved performance of GaN based light emitting diodes with ex-situ sputtered AlN nucleation layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Shuo-Wei; Epistar Corporation, Hsinchu 300, Taiwan; Li, Heng

The crystal quality, electrical and optical properties of GaN based light emitting diodes (LEDs) with ex-situ sputtered physical vapor deposition (PVD) aluminum nitride (AlN) nucleation layers were investigated. It was found that the crystal quality in terms of defect density and x-ray diffraction linewidth was greatly improved in comparison to LEDs with in-situ low temperature GaN nucleation layer. The light output power was 3.7% increased and the reverse bias voltage of leakage current was twice on LEDs with ex-situ PVD AlN nucleation layers. However, larger compressive strain was discovered in LEDs with ex-situ PVD AlN nucleation layers. The study showsmore » the potential and constrain in applying ex-situ PVD AlN nucleation layers to fabricate high quality GaN crystals in various optoelectronics.« less

Nearly Efficiency-Droop-Free AlGaN-Based Ultraviolet Light-Emitting Diodes with a Specifically Designed Superlattice p-Type Electron Blocking Layer for High Mg Doping Efficiency.

PubMed

Zhang, Zi-Hui; Huang Chen, Sung-Wen; Chu, Chunshuang; Tian, Kangkai; Fang, Mengqian; Zhang, Yonghui; Bi, Wengang; Kuo, Hao-Chung

2018-04-24

This work reports a nearly efficiency-droop-free AlGaN-based deep ultraviolet light-emitting diode (DUV LED) emitting in the peak wavelength of 270 nm. The DUV LED utilizes a specifically designed superlattice p-type electron blocking layer (p-EBL). The superlattice p-EBL enables a high hole concentration in the p-EBL which correspondingly increases the hole injection efficiency into the multiple quantum wells (MQWs). The enhanced hole concentration within the MQW region can more efficiently recombine with electrons in the way of favoring the radiative recombination, leading to a reduced electron leakage current level. As a result, the external quantum efficiency for the proposed DUV LED structure is increased by 100% and the nearly efficiency-droop-free DUV LED structure is obtained experimentally.

Optimization of light quality from color mixing light-emitting diode systems for general lighting

NASA Astrophysics Data System (ADS)

Thorseth, Anders

2012-03-01

Given the problem of metamerisms inherent in color mixing in light-emitting diode (LED) systems with more than three distinct colors, a method for optimizing the spectral output of multicolor LED system with regards to standardized light quality parameters has been developed. The composite spectral power distribution from the LEDs are simulated using spectral radiometric measurements of single commercially available LEDs for varying input power, to account for the efficiency droop and other non-linear effects in electrical power vs. light output. The method uses electrical input powers as input parameters in a randomized steepest decent optimization. The resulting spectral power distributions are evaluated with regard to the light quality using the standard characteristics: CIE color rendering index, correlated color temperature and chromaticity distance. The results indicate Pareto optimal boundaries for each system, mapping the capabilities of the simulated lighting systems with regard to the light quality characteristics.

Fabrication and characterization of GaN-based light-emitting diodes without pre-activation of p-type GaN.

PubMed

Hu, Xiao-Long; Wang, Hong; Zhang, Xi-Chun

2015-01-01

We fabricated GaN-based light-emitting diodes (LEDs) without pre-activation of p-type GaN. During the fabrication process, a 100-nm-thick indium tin oxide film was served as the p-type contact layer and annealed at 500°C in N2 ambient for 20 min to increase its transparency as well as to activate the p-type GaN. The electrical measurements showed that the LEDs were featured by a lower forward voltage and higher wall-plug efficiency in comparison with LEDs using pre-activation of p-type GaN. We discussed the mechanism of activation of p-type GaN at 500°C in N2 ambient. Furthermore, x-ray photoemission spectroscopy examinations were carried out to study the improved electrical performances of the LEDs without pre-activation of p-type GaN.

GaN-based photon-recycling green light-emitting diodes with vertical-conduction structure.

PubMed

Sheu, Jinn-Kong; Chen, Fu-Bang; Yen, Wei-Yu; Wang, Yen-Chin; Liu, Chun-Nan; Yeh, Yu-Hsiang; Lee, Ming-Lun

2015-04-06

A p-i-n structure with near-UV(n-UV) emitting InGaN/GaN multiple quantum well(MQW) structure stacked on a green unipolar InGaN/GaN MQW was epitaxially grown at the same sapphire substrate. Photon recycling green light-emitting diodes(LEDs) with vertical-conduction feature on silicon substrates were then fabricated by wafer bonding and laser lift-off techniques. The green InGaN/GaN QWs were pumped with n-UV light to reemit low-energy photons when the LEDs were electrically driven with a forward current. Efficiency droop is potentially insignificant compared with the direct green LEDs due to the increase of effective volume of active layer in the optically pumped green LEDs, i.e., light emitting no longer limited in the QWs nearest to the p-type region to cause severe Auger recombination and carrier overflow losses.

Highly efficient all-nitride phosphor-converted white light emitting diode

NASA Astrophysics Data System (ADS)

Mueller-Mach, Regina; Mueller, Gerd; Krames, Michael R.; Höppe, Henning A.; Stadler, Florian; Schnick, Wolfgang; Juestel, Thomas; Schmidt, Peter

2005-07-01

The development and demonstration of a highly efficient warm-white all-nitride phosphor-converted light emitting diode (pc-LED) is presented utilizing a GaN based quantum well blue LED and two novel nitrogen containing luminescent materials, both of which are doped with Eu2+. For color conversion of the primary blue the nitridosilicates M2Si5N8 (orange-red) and MSi2O2N2 (yellow-green), with M = alkaline earth, were employed, thus achieving a high luminous efficiency (25 lumen/W at 1 W input), excellent color quality (correlated color temperature CCT = 3200 K, general color rendering index Ra > 90) and the highest proven color stability of any pc-LED obtained so far. Thus, these novel all-nitride LEDs are superior to both incandescent and fluorescent lamps and may therefore become the next generation of general lighting sources.

Color design model of high color rendering index white-light LED module.

PubMed

Ying, Shang-Ping; Fu, Han-Kuei; Hsieh, Hsin-Hsin; Hsieh, Kun-Yang

2017-05-10

The traditional white-light light-emitting diode (LED) is packaged with a single chip and a single phosphor but has a poor color rendering index (CRI). The next-generation package comprises two chips and a single phosphor, has a high CRI, and retains high luminous efficacy. This study employs two chips and two phosphors to improve the diode's color tunability with various proportions of two phosphors and various densities of phosphor in the silicone used. A color design model is established for color fine-tuning of the white-light LED module. The maximum difference between the measured and color-design-model simulated CIE 1931 color coordinates is approximately 0.0063 around a correlated color temperature (CCT) of 2500 K. This study provides a rapid method to obtain the color fine-tuning of a white-light LED module with a high CRI and luminous efficacy.

Two-color light-emitting diodes with polarization-sensitive high extraction efficiency based on graphene

NASA Astrophysics Data System (ADS)

H, Sattarian; S, Shojaei; E, Darabi

2016-05-01

In the present study, graphene photonic crystals are employed to enhance the light extraction efficiency (LEE) of two-color, red and blue, light-emitting diode (LED). The transmission characteristics of one-dimensional (1D) Fibonacci graphene photonic crystal LED (FGPC-LED) are investigated by using the transfer matrix method and the scaling study is presented. We analyzed the influence of period, thickness, and permittivity in the structure to enhance the LEE. The transmission spectrum of 1D FGPC has been optimized in detail. In addition, the effects of the angle of incidence and the state of polarization are investigated. As the main result, we found the optimum values of relevant parameters to enhance the extraction of red and blue light from an LED as well as provide perfect omnidirectional and high peak transmission filters for the TE and TM modes.

Light Emitting Diodes and Astronomical Environments: Results from in situ Field Measurements

NASA Astrophysics Data System (ADS)

Craine, Brian L.; Craine, Eric R.

2015-05-01

Light emitting diode (LED) light fixtures are rapidly becoming industry standards for outdoor lighting. They are promoted on the strength of long lifetimes (hence economic efficiencies), low power requirements, directability, active brightness controls, and energy efficiency. They also tend to produce spectral shifts that are undesirable in astronomical settings, but which can be moderated by filters. LED lighting for continuous roadway and parking lot lighting is particularly popular, and many communities are in the process of retrofitting Low Pressure Sodium (LPS) and other lights by tens of thousands of new LED fixtures at a time. What is the impact of this process on astronomical observatories and on dark skies upon which amateur astronomers rely? We bypass modeling and predictions to make actual measurements of these lights in the field. We report on original ground, airborne, and satellite observations of LED lights and discuss their light budgets, zenith angle functions, and impacts on observatory environs.

Study on Light Extraction from GaN-based Green Light-Emitting Diodes Using Anodic Aluminum Oxide Pattern and Nanoimprint Lithography

PubMed Central

Jiang, Shengxiang; Feng, Yulong; Chen, Zhizhong; Zhang, Lisheng; Jiang, Xianzhe; Jiao, Qianqian; Li, Junze; Chen, Yifan; Li, Dongsan; Liu, Lijian; Yu, Tongjun; Shen, Bo; Zhang, Guoyi

2016-01-01

An anodic aluminum oxide (AAO) patterned sapphire substrate, with the lattice constant of 520 ± 40 nm, pore dimension of 375 ± 50 nm, and height of 450 ± 25 nm was firstly used as a nanoimprint lithography (NIL) stamp and imprinted onto the surface of the green light-emitting diode (LED). A significant light extraction efficiency (LEE) was improved by 116% in comparison to that of the planar LED. A uniform broad protrusion in the central area and some sharp lobes were also obtained in the angular resolution photoluminescence (ARPL) for the AAO patterned LED. The mechanism of the enhancement was correlated to the fluctuations of the lattice constant and domain orientation of the AAO-pattern, which enabled the extraction of more guided modes from the LED device. PMID:26902178

Design and analysis of reflector for uniform light-emitting diode illuminance.

PubMed

Tsai, Chung-Yu

2013-05-01

A light-emitting diode (LED) projection system is proposed, composed of an LED chip and a variable-focus-parabolic (VFP) reflector, in which the focal length varies as a function of the vertical displacement of the incidence point relative to the horizontal centerline of the LED chip. The light-ray paths within the projection system are analyzed using an exact analytical model and a skew-ray tracing approach. The profile of the proposed VFP reflector and the position of the LED chip are then optimized in such a way as to enhance the uniformity of the illuminance distribution on the target region of the image plane. The validity of the optimized design is demonstrated by means of ZEMAX simulations. It is shown that the optimized VFP projector system yields a significant improvement in illuminance uniformity compared to conventional spherical and parabolic projectors and therefore minimizes the glare effect.

Flexible White Light Emitting Diodes Based on Nitride Nanowires and Nanophosphors

PubMed Central

2016-01-01

We report the first demonstration of flexible white phosphor-converted light emitting diodes (LEDs) based on p–n junction core/shell nitride nanowires. GaN nanowires containing seven radial In0.2Ga0.8N/GaN quantum wells were grown by metal–organic chemical vapor deposition on a sapphire substrate by a catalyst-free approach. To fabricate the flexible LED, the nanowires are embedded into a phosphor-doped polymer matrix, peeled off from the growth substrate, and contacted using a flexible and transparent silver nanowire mesh. The electroluminescence of a flexible device presents a cool-white color with a spectral distribution covering a broad spectral range from 400 to 700 nm. Mechanical bending stress down to a curvature radius of 5 mm does not yield any degradation of the LED performance. The maximal measured external quantum efficiency of the white LED is 9.3%, and the wall plug efficiency is 2.4%. PMID:27331079

Molecular Engineering of UV/Vis Light-Emitting Diode (LED)-Sensitive Donor-π-Acceptor-Type Sulfonium Salt Photoacid Generators: Design, Synthesis, and Study of Photochemical and Photophysical Properties.

PubMed

Wu, Xingyu; Jin, Ming; Xie, Jianchao; Malval, Jean-Pierre; Wan, Decheng

2017-11-07

A series of donor-π-acceptor-type sulfonium salt photoacid generators (PAGs) were designed and synthesized by systematically changing electron-donating groups, π-conjugated systems, electron-withdrawing groups, and the number of branches through molecular engineering. These PAGs can effectively decompose under UV/Vis irradiation from a light-emitting diode (LED) light source because of the matching absorption and emitting spectra of the LEDs. The absorption and acid-generation properties of these sulfonium salts were elucidated by UV/Vis spectroscopy and so forth. Results indicated that the PAG performance benefited from the introduction of strong electron-donating groups, specific π-conjugated structures, certain electron-withdrawing groups, or two-branched structures. Most sulfonium salts showed potential as photoinitiators under irradiation by a wide variety of UV and visible LEDs. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Nearly Efficiency-Droop-Free AlGaN-Based Ultraviolet Light-Emitting Diodes with a Specifically Designed Superlattice p-Type Electron Blocking Layer for High Mg Doping Efficiency

NASA Astrophysics Data System (ADS)

Zhang, Zi-Hui; Huang Chen, Sung-Wen; Chu, Chunshuang; Tian, Kangkai; Fang, Mengqian; Zhang, Yonghui; Bi, Wengang; Kuo, Hao-Chung

2018-04-01

This work reports a nearly efficiency-droop-free AlGaN-based deep ultraviolet light-emitting diode (DUV LED) emitting in the peak wavelength of 270 nm. The DUV LED utilizes a specifically designed superlattice p-type electron blocking layer (p-EBL). The superlattice p-EBL enables a high hole concentration in the p-EBL which correspondingly increases the hole injection efficiency into the multiple quantum wells (MQWs). The enhanced hole concentration within the MQW region can more efficiently recombine with electrons in the way of favoring the radiative recombination, leading to a reduced electron leakage current level. As a result, the external quantum efficiency for the proposed DUV LED structure is increased by 100% and the nearly efficiency-droop-free DUV LED structure is obtained experimentally.

Stretchable Light-Emitting Diodes with Organometal-Halide-Perovskite-Polymer Composite Emitters.

PubMed

Bade, Sri Ganesh R; Shan, Xin; Hoang, Phong Tran; Li, Junqiang; Geske, Thomas; Cai, Le; Pei, Qibing; Wang, Chuan; Yu, Zhibin

2017-06-01

Intrinsically stretchable light-emitting diodes (LEDs) are demonstrated using organometal-halide-perovskite/polymer composite emitters. The polymer matrix serves as a microscale elastic connector for the rigid and brittle perovskite and induces stretchability to the composite emissive layers. The stretchable LEDs consist of poly(ethylene oxide)-modified poly(3,4-ethylenedioxythiophene) polystyrene sulfonate as a transparent and stretchable anode, a perovskite/polymer composite emissive layer, and eutectic indium-gallium as the cathode. The devices exhibit a turn-on voltage of 2.4 V, and a maximum luminance intensity of 15 960 cd m -2 at 8.5 V. Such performance far exceeds all reported intrinsically stretchable LEDs based on electroluminescent polymers. The stretchable perovskite LEDs are mechanically robust and can be reversibly stretched up to 40% strain for 100 cycles without failure. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

A thermosyphon heat pipe cooler for high power LEDs cooling

NASA Astrophysics Data System (ADS)

Li, Ji; Tian, Wenkai; Lv, Lucang

2016-08-01

Light emitting diode (LED) cooling is facing the challenge of high heat flux more seriously with the increase of input power and diode density. The proposed unique thermosyphon heat pipe heat sink is particularly suitable for cooling of high power density LED chips and other electronics, which has a heat dissipation potential of up to 280 W within an area of 20 mm × 22 mm (>60 W/cm2) under natural air convection. Meanwhile, a thorough visualization investigation was carried out to explore the two phase flow characteristics in the proposed thermosyphon heat pipe. Implementing this novel thermosyphon heat pipe heat sink in the cooling of a commercial 100 W LED integrated chip, a very low apparent thermal resistance of 0.34 K/W was obtained under natural air convection with the aid of the enhanced boiling heat transfer at the evaporation side and the enhanced natural air convection at the condensation side.

Improving light extraction of InGaN-based light emitting diodes with a roughened p-GaN surface using CsCl nano-islands.

PubMed

Wei, Tongbo; Kong, Qingfeng; Wang, Junxi; Li, Jing; Zeng, Yiping; Wang, Guohong; Li, Jinmin; Liao, Yuanxun; Yi, Futing

2011-01-17

InGaN-based light emitting diodes (LEDs) with a top nano-roughened p-GaN surface are fabricated using self-assembled CsCl nano-islands as etch masks. Following formation of hemispherical GaN nano-island arrays, electroluminescence (EL) spectra of roughened LEDs display an obvious redshift due to partial compression release in quantum wells through Inductively Coupled Plasma (ICP) etching. At a 350-mA current, the enhancement of light output power of LEDs subjected to ICP treatment with durations of 50, 150 and 250 sec compared with conventional LED have been determined to be 9.2, 70.6, and 42.3%, respectively. Additionally, the extraction enhancement factor can be further improved by increasing the size of CsCl nano-island. The economic and rapid method puts forward great potential for high performance lighting devices.

Sidewall passivation for InGaN/GaN nanopillar light emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Choi, Won Hyuck; Abraham, Michael; Yu, Shih-Ying

2014-07-07

We studied the effect of sidewall passivation on InGaN/GaN multiquantum well-based nanopillar light emitting diode (LED) performance. In this research, the effects of varying etch rate, KOH treatment, and sulfur passivation were studied for reducing nanopillar sidewall damage and improving device efficiency. Nanopillars prepared under optimal etching conditions showed higher photoluminescence intensity compared with starting planar epilayers. Furthermore, nanopillar LEDs with and without sulfur passivation were compared through electrical and optical characterization. Suppressed leakage current under reverse bias and four times higher electroluminescence (EL) intensity were observed for passivated nanopillar LEDs compared with unpassivated nanopillar LEDs. The suppressed leakage currentmore » and EL intensity enhancement reflect the reduction of non-radiative recombination at the nanopillar sidewalls. In addition, the effect of sulfur passivation was found to be very stable, and further insight into its mechanism was gained through transmission electron microscopy.« less

Revolution…Now The Future Arrives for Five Clean Energy Technologies – 2015 Update

DOE Office of Scientific and Technical Information (OSTI.GOV)

None

In 2013, the U.S. Department of Energy (DOE) released the Revolution Now report, highlighting four transformational technologies: land-based wind power, silicon photovoltaic (PV) solar modules, light-emitting diodes (LEDs), and electric vehicles (EVs). That study and its 2014 update showed how dramatic reductions in cost are driving a surge in consumer, industrial, and commercial adoption for these clean energy technologies—as well as yearly progress. In addition to presenting the continued progress made over the last year in these areas, this year’s update goes further. Two separate sections now cover large, central, utility-scale PV plants and smaller, rooftop, distributed PV systems tomore » highlight how both have achieved significant deployment nationwide, and have done so through different innovations, such as easier access to capital for utility-scale PV and reductions of non-hardware costs and third-party ownership for distributed PV. Along with these core technologies« less

An All-Solid-State, Room-Temperature, Heterodyne Receiver for Atmospheric Spectroscopy at 1.2 THz

NASA Technical Reports Server (NTRS)

Siles, Jose V.; Mehdi, Imran; Schlecht, Erich T.; Gulkis, Samuel; Chattopadhyay, Goutam; Lin, Robert H.; Lee, Choonsup; Gill, John J.; Thomas, Bertrand; Maestrini, Alain E.

2013-01-01

Heterodyne receivers at submillimeter wavelengths have played a major role in astrophysics as well as Earth and planetary remote sensing. All-solid-state heterodyne receivers using both MMIC (monolithic microwave integrated circuit) Schottky-diode-based LO (local oscillator) sources and mixers are uniquely suited for long-term planetary missions or Earth climate monitoring missions as they can operate for decades without the need for any active cryogenic cooling. However, the main concern in using Schottky-diode-based mixers at frequencies beyond 1 THz has been the lack of enough LO power to drive the devices because 1 to 3 mW are required to properly pump Schottky diode mixers. Recent progress in HEMT- (high-electron-mobility- transistor) based power amplifier technology, with output power levels in excess of 1 W recently demonstrated at W-band, as well as advances in MMIC Schottky diode circuit technology, have led to measured output powers up to 1.4 mW at 0.9 THz. Here the first room-temperature tunable, all-planar, Schottky-diode-based receiver is reported that is operating at 1.2 THz over a wide (˜20%) bandwidth. The receiver front-end (see figure) consists of a Schottky-diode-based 540 to 640 GHz multiplied LO chain (featuring a cascade of W-band power amplifiers providing around 120 to 180 mW at W-band), a 200-GHz MMIC frequency doubler, and a 600-GHz MMIC frequency tripler, plus a biasable 1.2-THz MMIC sub-harmonic Schottky-diode mixer. The LO chain has been designed, fabricated, and tested at JPL and provides around 1 to 1.5 mW at 540 o 640 GHz. The sub-harmonic mixer consists of two Schottky diodes on a thin GaAs membrane in an anti-parallel configuration. An integrated metal insulator metal (MIM) capacitor has been included on-chip to allow dc bias for the Schottky diodes. A bias voltage of around 0.5 V/diode is necessary to reduce the LO power required down to the 1 to 1.5 mW available from the LO chain. The epilayer thickness and doping profiles have been specifically optimized to maximize the mixer performance beyond 1 THz. The measured DSB noise temperatures and conversion losses of the receiver are 2,000 to 3,500 K and 12 to 14 dB, respectively, at 120 K, and 4,000 to 6,000 K and 13 to 15 dB, respectively, at 300 K. These results establish the state-of-the-art for all-solid-state, all-planar heterodyne receivers at 1.2 THz operating at either room temperature or using passive cooling only. Since no cryogenic cooling is needed, the receiver is eminently suited to atmospheric heterodyne spectroscopy of the outer planets and their moons.

Evolution and advanced technology. [of Flight Telerobotic Servicer

NASA Technical Reports Server (NTRS)

Ollendorf, Stanford; Pennington, Jack E.; Hansen, Bert, III

1990-01-01

The NASREM architecture with its standard interfaces permits development and evolution of the Flight Telerobotic Servicer to greater autonomy. Technologies in control strategies for an arm with seven DOF, including a safety system containing skin sensors for obstacle avoidance, are being developed. Planning and robotic execution software includes symbolic task planning, world model data bases, and path planning algorithms. Research over the last five years has led to the development of laser scanning and ranging systems, which use coherent semiconductor laser diodes for short range sensing. The possibility of using a robot to autonomously assemble space structures is being investigated. A control framework compatible with NASREM is being developed that allows direct global control of the manipulator. Researchers are developing systems that permit an operator to quickly reconfigure the telerobot to do new tasks safely.

Efficient and bright organic light-emitting diodes on single-layer graphene electrodes

NASA Astrophysics Data System (ADS)

Li, Ning; Oida, Satoshi; Tulevski, George S.; Han, Shu-Jen; Hannon, James B.; Sadana, Devendra K.; Chen, Tze-Chiang

2013-08-01

Organic light-emitting diodes are emerging as leading technologies for both high quality display and lighting. However, the transparent conductive electrode used in the current organic light-emitting diode technologies increases the overall cost and has limited bendability for future flexible applications. Here we use single-layer graphene as an alternative flexible transparent conductor, yielding white organic light-emitting diodes with brightness and efficiency sufficient for general lighting. The performance improvement is attributed to the device structure, which allows direct hole injection from the single-layer graphene anode into the light-emitting layers, reducing carrier trapping induced efficiency roll-off. By employing a light out-coupling structure, phosphorescent green organic light-emitting diodes exhibit external quantum efficiency >60%, while phosphorescent white organic light-emitting diodes exhibit external quantum efficiency >45% at 10,000 cd m-2 with colour rendering index of 85. The power efficiency of white organic light-emitting diodes reaches 80 lm W-1 at 3,000 cd m-2, comparable to the most efficient lighting technologies.

High-speed GaN/GaInN nanowire array light-emitting diode on silicon(111).

PubMed

Koester, Robert; Sager, Daniel; Quitsch, Wolf-Alexander; Pfingsten, Oliver; Poloczek, Artur; Blumenthal, Sarah; Keller, Gregor; Prost, Werner; Bacher, Gerd; Tegude, Franz-Josef

2015-04-08

The high speed on-off performance of GaN-based light-emitting diodes (LEDs) grown in c-plane direction is limited by long carrier lifetimes caused by spontaneous and piezoelectric polarization. This work demonstrates that this limitation can be overcome by m-planar core-shell InGaN/GaN nanowire LEDs grown on Si(111). Time-resolved electroluminescence studies exhibit 90-10% rise- and fall-times of about 220 ps under GHz electrical excitation. The data underline the potential of these devices for optical data communication in polymer fibers and free space.

A Study of Wavelength Division Multiplexing for Avionics Applications.

DTIC Science & Technology

1982-08-01

Force system II, an eight-wavelength, codirectional, 300-Mb/s, point-to-point system, was designed using laser diode sources with channel wavelengths...Injection Locking 72 4.2.6 Laser Packaging 77 4.3 System Simulation Results 77 4.3.1 LED Systems 78 4.3.1.1 System I 79 4.3.1.2 System III 82 4.3.2 Laser ...FIGURE TITLE PAGE 1.0-1 WDM Study Organization 4 2.3.1-1 Spectral Emission of an InGaAsP Laser Diode 14 2.3.1-2 Spectral Emission of an LED 16 2.3.1-3

Efficiency improvement of green light-emitting diodes by employing all-quaternary active region and electron-blocking layer

NASA Astrophysics Data System (ADS)

Usman, Muhammad; Saba, Kiran; Han, Dong-Pyo; Muhammad, Nazeer

2018-01-01

High efficiency of green GaAlInN-based light-emitting diode (LED) has been proposed with peak emission wavelength of ∼510 nm. By introducing quaternary quantum well (QW) along with the quaternary barrier (QB) and quaternary electron blocking layer (EBL) in a single structure, an efficiency droop reduction of up to 29% has been achieved in comparison to the conventional GaN-based LED. The proposed structure has significantly reduced electrostatic field in the active region. As a result, carrier leakage has been minimized and spontaneous emission rate has been doubled.

Direct correlations of structural and optical properties of three-dimensional GaN/InGaN core/shell micro-light emitting diodes

NASA Astrophysics Data System (ADS)

Sadat Mohajerani, Matin; Müller, Marcus; Hartmann, Jana; Zhou, Hao; Wehmann, Hergo-H.; Veit, Peter; Bertram, Frank; Christen, Jürgen; Waag, Andreas

2016-05-01

Three-dimensional (3D) InGaN/GaN quantum-well (QW) core-shell light emitting diodes (LEDs) are a promising candidate for the future solid state lighting. In this contribution, we study direct correlations of structural and optical properties of the core-shell LEDs using highly spatially-resolved cathodoluminescence spectroscopy (CL) in combination with scanning electron microscopy (SEM) and scanning transmission electron microscopy (STEM). Temperature-dependent resonant photoluminescence (PL) spectroscopy has been performed to understand recombination mechanisms and to estimate the internal quantum efficiency (IQE).

Effects of color temperatures (kelvin) of led bulbs on blood physiological variables of broilers grown to heavy weights

USDA-ARS?s Scientific Manuscript database

Light-emitting diode (LED) lighting is being used in the poultry industry to reduce energy usage in broiler production facilities. However, limited data are available comparing efficacy of different spectral distribution of LED bulbs on blood physiological variables of broilers grown to heavy weight...

Indium gallium nitride-based ultraviolet, blue, and green light-emitting diodes functionalized with shallow periodic hole patterns

PubMed Central

Jeong, Hyun; Salas-Montiel, Rafael; Lerondel, Gilles; Jeong, Mun Seok

2017-01-01

In this study, we investigated the improvement in the light output power of indium gallium nitride (InGaN)-based ultraviolet (UV), blue, and green light-emitting diodes (LEDs) by fabricating shallow periodic hole patterns (PHPs) on the LED surface through laser interference lithography and inductively coupled plasma etching. Noticeably, different enhancements were observed in the light output powers of the UV, blue, and green LEDs with negligible changes in the electrical properties in the light output power versus current and current versus voltage curves. In addition, confocal scanning electroluminescence microscopy is employed to verify the correlation between the enhancement in the light output power of the LEDs with PHPs and carrier localization of InGaN/GaN multiple quantum wells. Light propagation through the PHPs on the UV, blue, and green LEDs is simulated using a three-dimensional finite-difference time-domain method to confirm the experimental results. Finally, we suggest optimal conditions of PHPs for improving the light output power of InGaN LEDs based on the experimental and theoretical results. PMID:28374856

Indium gallium nitride-based ultraviolet, blue, and green light-emitting diodes functionalized with shallow periodic hole patterns.

PubMed

Jeong, Hyun; Salas-Montiel, Rafael; Lerondel, Gilles; Jeong, Mun Seok

2017-04-04

In this study, we investigated the improvement in the light output power of indium gallium nitride (InGaN)-based ultraviolet (UV), blue, and green light-emitting diodes (LEDs) by fabricating shallow periodic hole patterns (PHPs) on the LED surface through laser interference lithography and inductively coupled plasma etching. Noticeably, different enhancements were observed in the light output powers of the UV, blue, and green LEDs with negligible changes in the electrical properties in the light output power versus current and current versus voltage curves. In addition, confocal scanning electroluminescence microscopy is employed to verify the correlation between the enhancement in the light output power of the LEDs with PHPs and carrier localization of InGaN/GaN multiple quantum wells. Light propagation through the PHPs on the UV, blue, and green LEDs is simulated using a three-dimensional finite-difference time-domain method to confirm the experimental results. Finally, we suggest optimal conditions of PHPs for improving the light output power of InGaN LEDs based on the experimental and theoretical results.

Blue laser diode (LD) and light emitting diode (LED) applications

NASA Astrophysics Data System (ADS)

Bergh, Arpad A.

2004-09-01

The family of blue LEDs, edge emitting and surface emitting lasers, enable a number of applications. Blue lasers are used in digital applications such as optical storage in high density DVDs. The resolution of the spot size and hence the storage density is diffraction limited and is inversely proportional to the square of the wavelength of the laser. Other applications include printing, optical scanners, and high-resolution photo-lithography.As light emitters, blue LEDs are used for signaling and in direct view large area emissive displays. They are also making inroads into signage and LCD back-lighting, mobile platforms, and decorative accent lighting in curtains, furniture, etc.Blue LEDs produce white light either with phosphor wavelength converters or in combination with red and green LEDs. The full potential of LED light sources will require three devices to enable complete control over color and intensity.Sensing and medical/bio applications have a major impact on home security, on monitoring the environment, and on health care. New emerging diagnostic and therapeutic applications will improve the quality and reduce the cost of health care.

Large enhancement of light extraction efficiency in AlGaN-based nanorod ultraviolet light-emitting diode structures.

PubMed

Ryu, Han-Youl

2014-02-04

Light extraction efficiency (LEE) of AlGaN-based nanorod deep ultraviolet (UV) light-emitting diodes (LEDs) is numerically investigated using three-dimensional finite-difference time-domain simulations. LEE of deep UV LEDs is limited by strong light absorption in the p-GaN contact layer and total internal reflection. The nanorod structure is found to be quite effective in increasing LEE of deep UV LEDs especially for the transverse magnetic (TM) mode. In the nanorod LED, strong dependence of LEE on structural parameters such as the diameter of a nanorod and the p-GaN thickness is observed, which can be attributed to the formation of resonant modes inside the nanorod structure. Simulation results show that, when the structural parameters of the nanorod LED are optimized, LEE can be higher than 50% and 60% for the transverse electric (TE) and TM modes, respectively. The nanorod structure is expected to be a good candidate for the application to future high-efficiency deep UV LEDs. PACS: 41.20.Jb; 42.72.Bj; 85.60.Jb.

Large enhancement of light extraction efficiency in AlGaN-based nanorod ultraviolet light-emitting diode structures

PubMed Central

2014-01-01

Light extraction efficiency (LEE) of AlGaN-based nanorod deep ultraviolet (UV) light-emitting diodes (LEDs) is numerically investigated using three-dimensional finite-difference time-domain simulations. LEE of deep UV LEDs is limited by strong light absorption in the p-GaN contact layer and total internal reflection. The nanorod structure is found to be quite effective in increasing LEE of deep UV LEDs especially for the transverse magnetic (TM) mode. In the nanorod LED, strong dependence of LEE on structural parameters such as the diameter of a nanorod and the p-GaN thickness is observed, which can be attributed to the formation of resonant modes inside the nanorod structure. Simulation results show that, when the structural parameters of the nanorod LED are optimized, LEE can be higher than 50% and 60% for the transverse electric (TE) and TM modes, respectively. The nanorod structure is expected to be a good candidate for the application to future high-efficiency deep UV LEDs. PACS 41.20.Jb; 42.72.Bj; 85.60.Jb PMID:24495598

Nanospherical-lens lithographical Ag nanodisk arrays embedded in p-GaN for localized surface plasmon-enhanced blue light emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wei, Tongbo, E-mail: tbwei@semi.ac.cn; Wu, Kui; Sun, Bo

2014-06-15

Large-scale Ag nanodisks (NDs) arrays fabricated using nanospherical-lens lithography (NLL) are embedded in p-GaN layer of an InGaN/GaN light-emitting diode (LED) for generating localized surface plasmon (LSP) coupling with the radiating dipoles in the quantum-well (QWs). Based on the Ag NDs with the controlled surface coverage, LSP leads to the improved crystalline quality of regrowth p-GaN, increased photoluminescence (PL) intensity, reduced PL decay time, and enhanced output power of LED. Compared with the LED without Ag NDs, the optical output power at a current of 350 mA of the LSP-enhanced LEDs with Ag NDs having a distance of 20 andmore » 35 nm to QWs is increased by 26.7% and 31.1%, respectively. The electrical characteristics and optical properties of LEDs with embedded Ag NPs are dependent on the distance of between Ag NPs and QWs region. The LED with Ag NDs array structure is also found to exhibit reduced emission divergence, compared to that without Ag NDs.« less

NASA seeking high-power 60-GHz IMPATT diodes

NASA Technical Reports Server (NTRS)

Haugland, E. J.

1984-01-01

Recent progress in the development of high-power 60 GHz GaAs IMPATT diodes for communication links with high-data-rate satellites is discussed. One of the advantages of GaAs over Si as the material for the diodes are that GaAs is likely to have a higher output and efficiency than Si despite recent advances in Si technology. It is therefore in GaAs technology that research is currently concentrating. Some of the design strategies of the various companies working on the technology are described, including a pill process, MOCVD growth, and the use of diethy zinc as a dopant. Reliability testing of the diodes will be performed by NASA. Some of the alternatives to solid state amplifiers are discussed, including optical and traveling wave tube technology (TWT).

Effect of NASA light-emitting diode irradiation on molecular changes for wound healing in diabetic mice.

PubMed

Whelan, Harry T; Buchmann, Ellen V; Dhokalia, Apsara; Kane, Mary P; Whelan, Noel T; Wong-Riley, Margaret T T; Eells, Janis T; Gould, Lisa J; Hammamieh, Rasha; Das, Rina; Jett, Marti

2003-04-01

The purpose of this study was to assess the changes in gene expression of near-infrared light therapy in a model of impaired wound healing. Light-Emitting Diodes (LED), originally developed for NASA plant growth experiments in space, show promise for delivering light deep into tissues of the body to promote wound healing and human tissue growth. In this paper we present the effects of LED treatment on wounds in a genetically diabetic mouse model. Polyvinyl acetal (PVA) sponges were subcutaneously implanted in the dorsum of BKS.Cg-m +/+ Lepr(db) mice. LED treatments were given once daily, and at the sacrifice day, the sponges, incision line and skin over the sponges were harvested and used for RNA extraction. The RNA was subsequently analyzed by cDNA array. Our studies have revealed certain tissue regenerating genes that were significantly upregulated upon LED treatment when compared to the untreated sample. Integrins, laminin, gap junction proteins, and kinesin superfamily motor proteins are some of the genes involved during regeneration process. These are some of the genes that were identified upon gene array experiments with RNA isolated from sponges from the wound site in mouse with LED treatment. We believe that the use of NASA light-emitting diodes (LED) for light therapy will greatly enhance the natural wound healing process, and more quickly return the patient to a preinjury/illness level of activity. This work is supported and managed through the Defense Advanced Research Projects Agency (DARPA) and NASA Marshall Space Flight Center-SBIR Program.

Seed-to-seed growth of superdwarf wheat and arabidopsis using red light-emitting diodes (LED's): A report on baseline tests conducted for NASA's proposed Plant Research Unit (PRU)

NASA Technical Reports Server (NTRS)

Goins, G. D.; Yorio, N. C.; Sanwo, M. M.; Brown, C. S.

1996-01-01

To determine the influence of narrow-spectrum red light-emitting diodes (LED's) on plant growth and seed production, wheat (Triticum aestivum L.cv Superdwarf) and Arabidopsis (Arabidopsis thaliana (L.) Heynh, race Columbia) plants were grown under red LED's (peak emission 660 nm) and compared to plants grown under daylight fluorescent (white) light and red LED's supplemented with either 1 percent or 10 percent blue fluorescent (BF) light. Wheat growth under red LED's alone appeared normal, whereas Arabidopsis under red LED's alone developed curled leaf margins and a spiraling growth pattern. Both wheat and Arabidopsis under red LED's alone or red LED's + 1 percent BF light had significantly lower seed yield than plants grown under white light. However, the addition of 10 percent BF light to red LED's partially alleviated the adverse effect of red LED's on yield. Irrespective of the light treatment, viable seeds were produced by wheat(75-92 percent germination rate) and Arabidopsis (85-100 percent germination rate). These results indicate that wheat, and to a lesser extent Arabidopsis, can be successfully grown under red LED's alone, but supplemental blue light is required with red LED's to sufficiently match the growth characteristics and seed yield associated with plants grown under white light.

Overview of optical rectennas for solar energy harvesting

NASA Astrophysics Data System (ADS)

Zhu, Zixu; Joshi, Saumil; Pelz, Bradley; Moddel, Garret

2013-09-01

Although the concept of using optical rectenna for harvesting solar energy was first introduced four decades ago, only recently has it invited a surge of interest, with dozens of laboratories around the world working on various aspects of the technology. An optical rectenna couples an ultra-high-speed diode to a submicron antenna so that the incoming radiation received by the antenna is rectified by the diode to produce a DC power output. The result is a technology that can be efficient and inexpensive, requiring only low-cost materials. Conventional classical rectification theory does not apply at optical frequencies, necessitating the application of quantum photon-assisted tunneling theory to describe the device operation. At first glance it would appear that the ultimate conversion efficiency is limited only by the Landsberg limit of 93%, but a more sober analysis that includes limitation due to the coherence of solar radiation leads to a result that coincides with the Trivich-Flinn limit of 44%. Innovative antenna designs are required to achieve high efficiency at frequencies where resistive losses in metal are substantial. The diode most often considered for rectennas make use of electron tunneling through ultra-thin insulators in metal-insulator-metal (MIM) diodes. The most severe constraint is that the impedances of the antenna and diodes must match for efficient power transfer. The consequence is an RC time constant that cannot be achieved with parallel-plate MIM diodes, leading to the need for real innovations in diode structures. Technologies under consideration include sharp-tip and traveling-wave MIM diodes, and graphene geometric diodes. We survey the technologies under consideration.

Light intensity and quality from sole-source light-emitting diodes impact growth, morphology, and nutrient content of Brassica microgreens

USDA-ARS?s Scientific Manuscript database

Multi-layer vertical production systems using sole-source (SS) lighting can be used for microgreen production; however, traditional SS lighting can consume large amounts of electrical energy. Light-emitting diodes (LEDs) offer many advantages over conventional light sources including: high photoelec...

Light-Emitting Diodes: Learning New Physics

ERIC Educational Resources Information Center

Planinšic, Gorazd; Etkina, Eugenia

2015-01-01

This is the third paper in our Light-Emitting Diodes series. The series aims to create a systematic library of LED-based materials and to provide the readers with the description of experiments and pedagogical treatment that would help their students construct, test, and apply physics concepts and mathematical relations. The first paper, published…

Light-Emitting Diodes: Solving Complex Problems

ERIC Educational Resources Information Center

Planinšic, Gorazd; Etkina, Eugenia

2015-01-01

This is the fourth paper in our Light-Emitting Diodes series. The series aims to create a systematic library of LED-based materials and to provide readers with the description of experiments and the pedagogical treatment that would help their students construct, test, and apply physics concepts and mathematical relations. The first paper provided…

405 nm diode laser, halogen lamp and LED device comparison in dental composites cure: an "in vitro" experimental trial.

PubMed

Fornaini, C; Lagori, G; Merigo, E; Rocca, J-P; Chiusano, M; Cucinotta, A

2015-12-30

A 405 nm diode laser is indicated for composite materials polymerizing, thanks to the recent evolution in their compositions, absorbing in blue part of the spectrum. The purpose of this research was to evaluate its performance on two different kinds of composite resins. Two different composites were polymerized with a traditional halogen lamp, a LED device and a 405 nm diode laser. The depth of the cure, the volumetric shrinkage, and the degree of the conversion (DC%) of the double bond during the curing process were measured. One-way ANOVA test, Kruskal-Wallis tests, and Dunn comparison tests were used for statistic analysis. Regarding the depth of polymerization, the laser had the worst performance on one composite while on the other, no significant difference with the other devices was observed. The volumetric shrinkage showed that laser produced the lowest change in both of the composites. The DC% measure confirmed these findings. Based on the results of this preliminary study, it is not possible to recommend the 405 nm diode laser for the polymerization of dental composites.

A lighting assembly based on red and blue light-emitting diodes as a lighting source for space agriculture

NASA Astrophysics Data System (ADS)

Avercheva, Olga; Berkovich, Yuliy A.; Smolyanina, Svetlana; Bassarskaya, Elizaveta; Zhigalova, Tatiana; Ptushenko, Vasiliy; Erokhin, Alexei

Light-emitting diodes (LEDs) are a promising lighting source for space agriculture due to their high efficiency, longevity, safety, and other factors. Assemblies based on red and blue LEDs have been recommended in literature, although not all plants show sufficient productivity in such lighting conditions. Adding of green LEDs proposed in some works was aimed at psychological support for the crew, and not at the improvement of plant growth. We studied the growth and the state of the photosynthetic apparatus in Chinese cabbage (Brassica chinensis L.) plants grown under red (650 nm) and blue (470 nm) light-emitting diodes (LEDs). Plants grown under a high-pressure sodium lamp (HPS lamp) were used as a control. The plants were illuminated with two photosynthetic photon flux levels: nearly 400 µE and about 100 µE. Plants grown under LEDs with 400 µE level, as compared to control plants, showed lower fresh weight, edible biomass, growth rate, and sugar content. The difference in fresh weight and edible biomass was even more pronounced in plants grown with 100 µE level; the data indicate that the adaptability of the test plants to insufficient lighting decreased. Under LEDs, we observed the decreasing of root growth and the absence of transition to the flowering stage, which points to a change in the hormonal balance in plants grown in such lighting conditions. We also found differences in the functioning of the photosynthetic apparatus and its reaction to a low lighting level. We have concluded that a lighting assembly with red and blue LEDs only is insufficient for the plant growth and productivity, and can bring about alterations in their adaptive and regulatory mechanisms. Further studies are needed to optimize the lighting spectrum for space agriculture, taking into account the photosynthetic, phototropic and regulatory roles of light. Using white LEDs or adding far-red and green LEDs might be a promising approach.

Comparative performance analysis of shunt and series passive filter for LED lamp

NASA Astrophysics Data System (ADS)

Sarwono, Edi; Facta, Mochammad; Handoko, Susatyo

2018-03-01

Light Emitting Diode lamp or LED lamp nowadays is widely used by consumers as a new innovation in the lighting technologies due to its energy saving for low power consumption lamps for brighter light intensity. How ever, the LED lamp produce an electric pollutant known as harmonics. The harmonics is generated by rectifier as part of LED lamp circuit. The present of harmonics in current or voltage has made the source waveform from the grid is distorted. This distortion may cause inacurrate measurement, mall function, and excessive heating for any element at the grid. This paper present an analysis work of shunt and series filters to suppress the harmonics generated by the LED lamp circuit. The work was initiated by conducting several tests to investigate the harmonic content of voltage and currents. The measurements in this work were carried out by using HIOKI Power Quality Analyzer 3197. The measurement results showed that the harmonics current of tested LED lamps were above the limit of IEEE standard 519-2014. Based on the measurement results shunt and series filters were constructed as low pass filters. The bode analysis were appled during construction and prediction of the filters performance. Based on experimental results, the application of shunt filter at input side of LED lamp has reduced THD current up to 88%. On the other hand, the series filter has significantly reduced THD current up to 92%.

An imaging-based photometric and colorimetric measurement method for characterizing OLED panels for lighting applications

NASA Astrophysics Data System (ADS)

Zhu, Yiting; Narendran, Nadarajah; Tan, Jianchuan; Mou, Xi

2014-09-01

The organic light-emitting diode (OLED) has demonstrated its novelty in displays and certain lighting applications. Similar to white light-emitting diode (LED) technology, it also holds the promise of saving energy. Even though the luminous efficacy values of OLED products have been steadily growing, their longevity is still not well understood. Furthermore, currently there is no industry standard for photometric and colorimetric testing, short and long term, of OLEDs. Each OLED manufacturer tests its OLED panels under different electrical and thermal conditions using different measurement methods. In this study, an imaging-based photometric and colorimetric measurement method for OLED panels was investigated. Unlike an LED that can be considered as a point source, the OLED is a large form area source. Therefore, for an area source to satisfy lighting application needs, it is important that it maintains uniform light level and color properties across the emitting surface of the panel over a long period. This study intended to develop a measurement procedure that can be used to test long-term photometric and colorimetric properties of OLED panels. The objective was to better understand how test parameters such as drive current or luminance and temperature affect the degradation rate. In addition, this study investigated whether data interpolation could allow for determination of degradation and lifetime, L70, at application conditions based on the degradation rates measured at different operating conditions.

Noise reduction in digital lensless holographic microscopy by engineering the light from a light-emitting diode.

PubMed

Garcia-Sucerquia, Jorge

2013-01-01

By engineering the light from a light-emitting diode (LED) the noises present in digital lensless holographic microscopy (DLHM) are reduced. The partially coherent light from an LED is tailored to produce a spherical wavefront with limited coherence time and the spatial coherence needed by DLHM to work. DLHM with this engineered light source is used to image biological samples that cover areas of the order of mm(2). The ratio between the diameter of the area that is almost coherently illuminated to the diameter of the illumination area is utilized as parameter to quantify the performance of the DLHM with the engineered LED light source. Experimental results show that while the noises can be reduced effectively the spatial resolution can be kept in the micrometer range.

Enhancement of mosquito trapping efficiency by using pulse width modulated light emitting diodes.

PubMed

Liu, Yu-Nan; Liu, Yu-Jen; Chen, Yi-Chian; Ma, Hsin-Yi; Lee, Hsiao-Yi

2017-01-06

In this study, a light-driving bug zapper is presented for well controlling the diseases brought by insects, such as mosquitoes. In order to have the device efficient to trap the insect pests in off-grid areas, pulse width modulated light emitting diodes (PWM-LED) combined with a solar power module are proposed and implemented. With specific PWM electric signals to drive the LED, it is found that no matter what the ability of catching insects or the consumed power efficiency can be enhanced thus. It is demonstrated that 40% of the UV LED consumed power and 25.9% of the total load power consumption can be saved, and the trapped mosquitoes are about 250% increased when the PWM method is applied in the bug zapper experiments.

Enhancement of mosquito trapping efficiency by using pulse width modulated light emitting diodes

NASA Astrophysics Data System (ADS)

Liu, Yu-Nan; Liu, Yu-Jen; Chen, Yi-Chian; Ma, Hsin-Yi; Lee, Hsiao-Yi

2017-01-01

In this study, a light-driving bug zapper is presented for well controlling the diseases brought by insects, such as mosquitoes. In order to have the device efficient to trap the insect pests in off-grid areas, pulse width modulated light emitting diodes (PWM-LED) combined with a solar power module are proposed and implemented. With specific PWM electric signals to drive the LED, it is found that no matter what the ability of catching insects or the consumed power efficiency can be enhanced thus. It is demonstrated that 40% of the UV LED consumed power and 25.9% of the total load power consumption can be saved, and the trapped mosquitoes are about 250% increased when the PWM method is applied in the bug zapper experiments.

Investigating the origin of efficiency droop by profiling the voltage across the multi-quantum well of an operating light-emitting diode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Taewoong; Seong, Tae-Yeon; School of Materials Science and Engineering, Korea University, Seoul 136-713

Efficiency droop is a phenomenon in which the efficiency of a light-emitting diode (LED) decreases with the increase in current density. To analyze efficiency droop, direct experimental observations on the energy conversion occurring inside the LED is required. Here, we present the measured voltage profiles on the cross section of an operating LED and analyze them with the cross-sectional temperature profiles obtained in a previous study under the same operation conditions. The measured voltage profiles suggest that with increases in the injection current density, electron depletion shifts from the multi-quantum well through an electron blocking layer to the p-GaN region.more » This is because electron leakage increases with increases in current density.« less

Enhancement of mosquito trapping efficiency by using pulse width modulated light emitting diodes

PubMed Central

Liu, Yu-Nan; Liu, Yu-Jen; Chen, Yi-Chian; Ma, Hsin-Yi; Lee, Hsiao-Yi

2017-01-01

In this study, a light-driving bug zapper is presented for well controlling the diseases brought by insects, such as mosquitoes. In order to have the device efficient to trap the insect pests in off-grid areas, pulse width modulated light emitting diodes (PWM-LED) combined with a solar power module are proposed and implemented. With specific PWM electric signals to drive the LED, it is found that no matter what the ability of catching insects or the consumed power efficiency can be enhanced thus. It is demonstrated that 40% of the UV LED consumed power and 25.9% of the total load power consumption can be saved, and the trapped mosquitoes are about 250% increased when the PWM method is applied in the bug zapper experiments. PMID:28059148

Enhanced light extraction efficiency of micro-ring array AlGaN deep ultraviolet light-emitting diodes

NASA Astrophysics Data System (ADS)

Bekele Fayisa, Gabisa; Lee, Jong Won; Kim, Jungsub; Kim, Yong-Il; Park, Youngsoo; Kim, Jong Kyu

2017-09-01

An effective approach to overcome inherently poor light extraction efficiency of AlGaN-based deep ultraviolet (DUV) light-emitting diodes (LEDs) is presented. We demonstrated the 5 × 5 array micro-ring DUV LED having an inclined sidewall at the outer perimeter and a p-GaN-removed inner circle of the micro-ring, together with MgF2/Al omnidirectional reflectors. The micro-ring array DUV LED shows remarkably higher light output power by 70% than the reference, consistent with the calculated result, as well as comparable turn-on and operational voltages, which are attributed to the effective extraction of strong transverse-magnetic polarized anisotropic emission and the reduction of the absorption loss by the p-GaN contact layer, simultaneously.

A Strategy for Architecture Design of Crystalline Perovskite Light-Emitting Diodes with High Performance.

PubMed

Shi, Yifei; Wu, Wen; Dong, Hua; Li, Guangru; Xi, Kai; Divitini, Giorgio; Ran, Chenxin; Yuan, Fang; Zhang, Min; Jiao, Bo; Hou, Xun; Wu, Zhaoxin

2018-06-01

All present designs of perovskite light-emitting diodes (PeLEDs) stem from polymer light-emitting diodes (PLEDs) or perovskite solar cells. The optimal structure of PeLEDs can be predicted to differ from PLEDs due to the different fluorescence dynamics and crystallization between perovskite and polymer. Herein, a new design strategy and conception is introduced, "insulator-perovskite-insulator" (IPI) architecture tailored to PeLEDs. As examples of FAPbBr 3 and MAPbBr 3 , it is experimentally shown that the IPI structure effectively induces charge carriers into perovskite crystals, blocks leakage currents via pinholes in the perovskite film, and avoids exciton quenching simultaneously. Consequently, as for FAPbBr 3 , a 30-fold enhancement in the current efficiency of IPI-structured PeLEDs compared to a control device with poly(3,4ethylenedioxythiophene):poly(styrene sulfonate) as hole-injection layer is achieved-from 0.64 to 20.3 cd A -1 -while the external quantum efficiency is increased from 0.174% to 5.53%. As the example of CsPbBr 3 , compared with the control device, both current efficiency and lifetime of IPI-structured PeLEDs are improved from 1.42 and 4 h to 9.86 cd A -1 and 96 h. This IPI architecture represents a novel strategy for the design of light-emitting didoes based on various perovskites with high efficiencies and stabilities. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Precision Spectroscopy, Diode Lasers, and Optical Frequency Measurement Technology

NASA Technical Reports Server (NTRS)

Hollberg, Leo (Editor); Fox, Richard (Editor); Waltman, Steve (Editor); Robinson, Hugh

1998-01-01

This compilation is a selected set of reprints from the Optical Frequency Measurement Group of the Time and Frequency Division of the National Institute of Standards and Technology, and consists of work published between 1987 and 1997. The two main programs represented here are (1) development of tunable diode-laser technology for scientific applications and precision measurements, and (2) research toward the goal of realizing optical-frequency measurements and synthesis. The papers are organized chronologically in five, somewhat arbitrarily chosen categories: Diode Laser Technology, Tunable Laser Systems, Laser Spectroscopy, Optical Synthesis and Extended Wavelength Coverage, and Multi-Photon Interactions and Optical Coherences.

Fabrication and evaluation of plasmonic light-emitting diodes with thin p-type layer and localized Ag particles embedded by ITO

NASA Astrophysics Data System (ADS)

Okada, N.; Morishita, N.; Mori, A.; Tsukada, T.; Tateishi, K.; Okamoto, K.; Tadatomo, K.

2017-04-01

Light-emitting diodes (LEDs) have been demonstrated with a thin p-type layer using the plasmonic effect. Optimal LED device operation was found when using a 20-nm-thick p+-GaN layer. Ag of different thicknesses was deposited on the thin p-type layer and annealed to form the localized Ag particles. The localized Ag particles were embedded by indium tin oxide to form a p-type electrode in the LED structure. By optimization of the plasmonic LED, the significant electroluminescence enhancement was observed when the thickness of Ag was 9.5 nm. Both upward and downward electroluminescence intensities were improved, and the external quantum efficiency was approximately double that of LEDs without the localized Ag particles. The time-resolved photoluminescence (PL) decay time for the LED with the localized Ag particles was shorter than that without the localized Ag particles. The faster PL decay time should cause the increase in internal quantum efficiency by adopting the localized Ag particles. To validate the localized surface plasmon resonance coupling effect, the absorption of the LEDs was investigated experimentally and using simulations.

Thermophotonics for ultra-high efficiency visible LEDs

NASA Astrophysics Data System (ADS)

Ram, Rajeev J.

2017-02-01

The wall-plug efficiency of modern light-emitting diodes (LEDs) has far surpassed all other forms of lighting and is expected to improve further as the lifetime cost of a luminaire is today dominated by the cost of energy. The drive towards higher efficiency inevitably opens the question about the limits of future enhancement. Here, we investigate thermoelectric pumping as a means for improving efficiency in wide-bandgap GaN based LEDs. A forward biased diode can work as a heat pump, which pumps lattice heat into the electrons injected into the active region via the Peltier effect. We experimentally demonstrate a thermally enhanced 450 nm GaN LED, in which nearly fourfold light output power is achieved at 615 K (compared to 295 K room temperature operation), with virtually no reduction in the wall-plug efficiency at bias V < ℏω/q. This result suggests the possibility of removing bulky heat sinks in high power LED products. A review of recent high-efficiency GaN LEDs suggests that Peltier thermal pumping plays a more important role in a wide range of modern LED structures that previously thought - opening a path to even higher efficiencies and lower lifetime costs for future lighting.

Polarization of III-nitride blue and ultraviolet light-emitting diodes

NASA Astrophysics Data System (ADS)

Shakya, J.; Knabe, K.; Kim, K. H.; Li, J.; Lin, J. Y.; Jiang, H. X.

2005-02-01

Polarization-resolved electroluminescence studies of III-nitride blue and ultraviolet (UV) light-emitting diodes (LEDs) were performed. The LEDs were fabricated on nitride materials grown by metalorganic chemical vapor deposition on sapphire substrates (0001). Transverse electric (TE) polarization dominates in the InGaN/GaN quantum-well (QW) blue LEDs (λ'=458nm), whereas transverse magnetic (TM) polarization is dominant in the AlInGaN QW UV LEDs (λ=333nm). For the case of edge emission in blue LEDs, a ratio (r=I⊥/I ‖) of about 1.8:1 was observed between the EL intensities with polarization E ⊥c (TE mode) and E ‖c (TM mode), which corresponds to a degree of polarization ˜0.29. The UV LEDs exhibit a ratio r of about 1:2.3, corresponding to a degree of polarization ˜0.4. This is due to the fact that the degree of polarization of the bandedge emission of the AlxInyGa1-x -yN active layer changes with Al concentration. The low emission efficiency of nitride UV LEDs is partly related to this polarization property. Possible consequences and ways to enhance UV emitter performances related to this unique polarization property are discussed.

Photodynamic Therapy for Actinic Keratoses: A Randomized Prospective Non-sponsored Cost-effectiveness Study of Daylight-mediated Treatment Compared with Light-emitting Diode Treatment.

PubMed

Neittaanmäki-Perttu, Noora; Grönroos, Mari; Karppinen, Toni; Snellman, Erna; Rissanen, Pekka

2016-02-01

Daylight-mediated photodynamic therapy (DL-PDT) is considered as effective as conventional PDT using artificial light (light-emitting diode (LED)-PDT) for treatment of actinic keratoses (AK). This randomized prospective non-sponsored study assessed the cost-effectiveness of DL-PDT compared with LED-PDT. Seventy patients with 210 AKs were randomized to DL-PDT or LED-PDT groups. Effectiveness was assessed at 6 months. The costs included societal costs and private costs, including the time patients spent in treatment. Results are presented as incremental cost-effectiveness ratio (ICER). The total costs per patient were significantly lower for DL-PDT (€132) compared with LED-PDT (€170), giving a cost saving of €38 (p = 0.022). The estimated probabilities for patients' complete response were 0.429 for DL-PDT and 0.686 for LED-PDT; a difference in probability of being healed of 0.257. ICER showed a monetary gain of €147 per unit of effectiveness lost. DL-PDT is less costly and less effective than LED-PDT. In terms of cost-effectiveness analysis, DL-PDT provides lower value for money compared with LED-PDT.