Ultraviolet Light Emitting Diode Use in Advanced Oxidation Processes

DTIC Science & Technology

2014-03-27

or medium pressure mercury lamps , but UV light emitting diodes ( LEDs ) have the capacity to be used for water disinfection also. Traditional mercury...based upon the phosphors that are selected and used to coat the inside of the glass tube from which these lamps are produced. A UV LED is...Research has demonstrated the ability to use UV LEDs in place of mercury lamps to achieve the same 7 disinfection capacity, and limited research has

Low-cost 420nm blue laser diode for tissue cutting and hemostasis

NASA Astrophysics Data System (ADS)

Linden, Kurt J.

2016-03-01

This paper describes the use of a 420 nm blue laser diode for possible surgery and hemostasis. The optical absorption of blood-containing tissue is strongly determined by the absorption characteristics of blood. Blood is primarily comprised of plasma (yellowish extracellular fluid that is approximately 95% water by volume) and formed elements: red blood cells (RBCs), white blood cells (WBCs) and platelets. The RBCs (hemoglobin) are the most numerous, and due to the spectral absorption characteristics of hemoglobin, the optical absorption of blood has a strong relative maximum value in the 420 nm blue region of the optical spectrum. Small, low-cost laser diodes emitting at 420 nm with tens of watts of continuous wave (CW) optical power are becoming commercially available. Experiments on the use of such laser diodes for tissue cutting with simultaneous hemostasis were carried out and are here described. It was found that 1 mm deep x 1 mm wide cuts can be achieved in red meat at a focused laser power level of 3 W moving at a velocity of ~ 1 mm/s. The peripheral necrosis and thermal damage zone extended over a width of approximately 0.5 mm adjacent to the cuts. Preliminary hemostasis experiments were carried out with fresh equine blood in Tygon tubing, where it was demonstrated that cauterization can occur in regions of intentional partial tubing puncture.

Gamma and fast neutron radiation monitoring inside spent reactor fuel assemblies

NASA Astrophysics Data System (ADS)

Lakosi, L.; Tam Nguyen, C.

2007-09-01

Gamma and neutron signatures of spent reactor fuel were monitored by small-size silicon diode and track etch detectors, respectively, in a nuclear power plant (NPP). These signatures, reflecting gross gamma intensity and the 242,244Cm content, contain information on the burn-up (BU) and cooling time (CT) of the fuel. The small size of the detectors allows close access to inside parts of the assemblies out of reach of other methods. A commercial Si diode was encapsulated in a cylindrical steel case and was used for gross γ monitoring. CR-39 detectors were used for neutron measurements. Irradiation exposures at the NPP were implemented in the central dosimetric channel of spent fuel assemblies (SFAs) stored in borated water. Gross γ and neutron axial profiles were taken up by scanning with the aid of a long steel guide tube, lowered down to the spent fuel pond by crane and fitted to the headpiece of the fuel assemblies. Gamma measurements were performed using a long cable introduced in this tube, with the Si diode at the end. A long steel wire was also led through the guide tube, to which a chain of 15 sample holder capsules was attached, each containing a track detector. Gamma dose rates of 0.1-10 kGy h -1, while neutron fluxes in a range of (0.25-26) 10 4 cm -2 s -1 were recorded. The results are in good correlation with those of a calculation for spent fuel neutron yield.

Phased laser diode array permits selective excitation of ultrasonic guided waves in coated bone-mimicking tubes

NASA Astrophysics Data System (ADS)

Moilanen, Petro; Salmi, Ari; Kilappa, Vantte; Zhao, Zuomin; Timonen, Jussi; Hæggström, Edward

2017-10-01

This paper validates simulation predictions, which state that specific modes could be enhanced in quantitative ultrasonic bone testing. Tunable selection of ultrasonic guided wave excitation is useful in non-destructive testing since it permits the mediation of energy into diagnostically useful modes while reducing the energy mediated into disturbing contributions. For instance, it is often challenging to distinguish and extract the useful modes from ultrasound signals measured in bone covered by a soft tissue. We show that a laser diode array can selectively excite ultrasound in bone mimicking phantoms. A fiber-coupled diode array (4 elements) illuminated two solid tubes (2-3 mm wall thickness) embraced by an opaque soft-tissue mimicking elastomer coating (5 mm thick). A predetermined time delay matching the selected mode and frequency was employed between the outputs of the elements. The generated ultrasound was detected by a 215 kHz piezo receiver. Our results suggest that this array reduces the disturbances caused by the elastomer cover and so pave way to permit non-contacting in vivo guided wave ultrasound assessment of human bones. The implementation is small, inexpensive, and robust in comparison with the conventional pulsed lasers.

Evaluation of a satellite laser ranging technique using pseudonoise code modulated laser diodes

NASA Technical Reports Server (NTRS)

Ball, Carolyn Kay

1987-01-01

Several types of Satellite Laser Ranging systems exist, operating with pulsed, high-energy lasers. The distance between a ground point and an orbiting satellite can be determined to within a few centimeters. A new technique substitutes pseudonoise code modulated laser diodes, which are much more compact, reliable and less costly, for the lasers now used. Since laser diode technology is only now achieving sufficiently powerful lasers, the capabilities of the new technique are investigated. Also examined are the effects of using an avalanche photodiode detector instead of a photomultiplier tube. The influence of noise terms (including background radiation, detector dark and thermal noise and speckle) that limit the system range and performance is evaluated.

Vacuum and the electron tube industry

NASA Astrophysics Data System (ADS)

Redhead, P. A.

2005-07-01

The electron tube industry started with the patenting of the thermionic diode by John Ambrose Fleming in 1904. The vacuum technology used by the infant tube industry was copied from the existing incandescent lamp industry. The growing demands for electron tubes for the military in the first world war led to major improvements in pumps and processing methods. By the 1920s, mass production methods were developing to satisfy the demands for receiving tubes by the burgeoning radio industry. Further expansion in the 1930s and 1940s resulted in improvements in automatic equipment for pumping vacuum tubes leading to the massive production rates of electron tubes in the second world war and the following two decades. The demand for radar during the war resulted in the development of techniques for large-scale production of microwave tubes and CRTs, the latter technology being put to good use later in TV picture tube production. The commercial introduction of the transistor ended the massive demand for receiving tubes. This review concentrates on the vacuum technology developed for receiving tube production.

Electron dynamics inside a vacuum tube diode through linear differential equations

NASA Astrophysics Data System (ADS)

González, Gabriel; Orozco, Fco. Javier González; Orozco

2014-04-01

In this paper we analyze the motion of charged particles in a vacuum tube diode by solving linear differential equations. Our analysis is based on expressing the volume charge density as a function of the current density and coordinates only, i.e. ρ=ρ(J,z), while in the usual scheme the volume charge density is expressed as a function of the current density and electrostatic potential, i.e. ρ=ρ(J,V). We show that, in the case of slow varying charge density, the space-charge-limited current is reduced up to 50%. Our approach gives the well-known behavior of the classical current density proportional to the three-halves power of the bias potential and inversely proportional to the square of the gap distance between electrodes, and does not require the solution of the nonlinear differential equation normally associated with the Child-Langmuir formulation.

Study of Increasing Lead Times in Major Weapon Systems Acquisition.

DTIC Science & Technology

1982-07-31

Conduit Covers X X X Connectors, Electrical X X X X X Control Systems (Auto- mated, Boiler) X Davit, Boat, Power- Opera.ted X Diodes X X X X A iX...tubes. Other end uses include washers in computer equipment, electrical insulators in motors and generators, and retardation plates in lasers . Supply...relays, electron tubes, printed circuits, and resistors. Platinum is also used in dentistry and for jewelry. Supply, A small amount of platinum (less

Experimental study on parasitic mode suppression using FeSiAl in relativistic klystron amplifier

NASA Astrophysics Data System (ADS)

Zhang, Zehai

2015-03-01

Experimental study of parasitic mode suppression using electromagnetic attenuate material FeSiAl in an S-band Relativistic Klystron Amplifier (RKA) is presented in this paper. The FeSiAl powder is coated and sintered onto the inner surface of a drift tube which locates between the input and the middle cavity of the RKA. Cold tests show that the attenuate rate of the tube against parasitic mode TE11 is about 50%. Experiments carried out on the Torch-01 accelerator present that the tube is effective in suppressing the parasitic mode. Two typical outputs are obtained. When the diode voltage is on a moderate level, the RKA operates well and the parasitic mode is totally suppressed. The pulse length of the High Power Microwave (HPM) almost equals the electron beam pulse length and the HPM average output power is about 300 MW, with a power efficiency of 10%. When the diode voltage is on a higher level, the output power and efficiency rise but the parasitic mode oscillation occurred and the pulse length is shortened. By contrast, the parasitic mode oscillation is too strong for the RKA to operate normally with un-sintered drift tube. The experimental study implies that FeSiAl is effective in suppressing the parasitic mode oscillation in a certain extent. However, total suppression needs a deeper attenuate rate and further investigation.

Experimental study on parasitic mode suppression using FeSiAl in Relativistic Klystron Amplifier.

PubMed

Zhang, Zehai

2015-03-01

Experimental study of parasitic mode suppression using electromagnetic attenuate material FeSiAl in an S-band Relativistic Klystron Amplifier (RKA) is presented in this paper. The FeSiAl powder is coated and sintered onto the inner surface of a drift tube which locates between the input and the middle cavity of the RKA. Cold tests show that the attenuate rate of the tube against parasitic mode TE11 is about 50%. Experiments carried out on the Torch-01 accelerator present that the tube is effective in suppressing the parasitic mode. Two typical outputs are obtained. When the diode voltage is on a moderate level, the RKA operates well and the parasitic mode is totally suppressed. The pulse length of the High Power Microwave (HPM) almost equals the electron beam pulse length and the HPM average output power is about 300 MW, with a power efficiency of 10%. When the diode voltage is on a higher level, the output power and efficiency rise but the parasitic mode oscillation occurred and the pulse length is shortened. By contrast, the parasitic mode oscillation is too strong for the RKA to operate normally with un-sintered drift tube. The experimental study implies that FeSiAl is effective in suppressing the parasitic mode oscillation in a certain extent. However, total suppression needs a deeper attenuate rate and further investigation.

Screens and Displays.

ERIC Educational Resources Information Center

Edstrom, Malin

1987-01-01

Discusses the characteristics of different computer screen technologies including the possible harmful effects on health of cathode ray tube (CRT) terminals. CRT's are compared to other technologies including liquid crystal displays, plasma displays, electroluminiscence displays, and light emitting diodes. A chart comparing the different…

Center-of-Mass Baton.

ERIC Educational Resources Information Center

Bucher, Manfred; And Others

1991-01-01

Described is a baton that consists of an unbreakable transparent tube with three inserted light-emitting diodes (LED) and terminal impact buffers that hold batteries and counterweights. The concepts of projectile motion and parabolic paths can be shown by analyzing the path of a thrown baton. (KR)

75 FR 29723 - Foreign-Trade Zone 29-Louisville, KY; Application for Expansion and Expansion of Manufacturing...

Federal Register 2010, 2011, 2012, 2013, 2014

2010-05-27

..., plates, filters, bearings, air pumps/compressors, valves, switches, electric motors, tubes/pipes/profiles... electric motors, pinions, magnets, ignition parts, diodes, transistors, resistors, semiconductors, liquid..., starter motors, motor/generator units, alternators, distributors, other static converters, inverter...

Diode laser-assisted endoscopic dacryocystorhinostomy: a comparison of three different combinations of adjunctive procedures.

PubMed

Dogan, Remzi; Meric, Aysenur; Ozsütcü, Mustafa; Yenigun, Alper

2013-08-01

Chronic dacryocystitis is a frequently encountered condition which can be corrected by dacryocystorhinostomy. Today, the diode laser is increasingly put to use in such corrective operations. This study aims to answer the questions of which adjunctive procedures and which combinations of such procedures are necessary and effective in securing more successful outcomes in diode laser dacryocystorhinostomy. This prospective randomized study included eighty patients (13 male, 67 female) who underwent dacryocystorhinostomy in our hospital during the 2 year period of January 2009-January 2011. The patients were selected consecutively and were randomly allocated to three groups. Group 1 (30): diode laser + mitomycin C + silicone intubation; Group 2 (27): diode laser + silicone intubation; Group 3 (23): diode laser + mitomycin C. All patients were evaluated postoperatively on day 1, week 1, and on the 1st, 3rd, 6th, 12th, 18th, and 24th months. The postoperative evaluation consisted of preoperative and postoperative ostium measurements, recording postoperative complications, and calculating and comparing success rates and operative times. The mean ages of the patients were 63.4 for Group 1, 60.7 for Group 2, and 61.8 for Group 3. No statistically significant difference was found among the groups regarding pre- and postoperative ostium measurements. The success rates were 84.3, 80, and 76.9 % for Groups 1, 2, and 3, respectively. Complications noted in Group 1 were restenosis (3), premature silicone tube loss (1), development of granulation tissue (3), synechia (2), infection (2), and hemorrhage (3). Those for Group 2 were restenosis (5), premature tube loss (2), granulation (8), synechia (6), infection (3), and hemorrhage (4). Group 3 had 6 cases with stenosis, 5 with granulation, 3 with infection, 6 with synechia, and 5 with hemorrhage. The operative times of the groups were 25.5, 15.3, and 18.1 min, respectively, for Group 1, 2, and 3. All three groups had statistically significant differences regarding the duration of surgery, with p < 0.001, p < 0.001, and p = 0.002 for Group 1 and 2, Group 1 and 3, and Group 2 and 3, respectively. Our study showed that when diode laser DCR was combined with bicanalicular silicone intubation and intraoperative mitomycin C application, those adjunctive procedures, while increasing operative time, enhanced the success rate and diminished complications as compared to diode laser plus intubation and/or diode laser plus mitomycin C.

Experimental study on parasitic mode suppression using FeSiAl in relativistic klystron amplifier

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Zehai

2015-03-15

Experimental study of parasitic mode suppression using electromagnetic attenuate material FeSiAl in an S-band Relativistic Klystron Amplifier (RKA) is presented in this paper. The FeSiAl powder is coated and sintered onto the inner surface of a drift tube which locates between the input and the middle cavity of the RKA. Cold tests show that the attenuate rate of the tube against parasitic mode TE{sub 11} is about 50%. Experiments carried out on the Torch-01 accelerator present that the tube is effective in suppressing the parasitic mode. Two typical outputs are obtained. When the diode voltage is on a moderate level,more » the RKA operates well and the parasitic mode is totally suppressed. The pulse length of the High Power Microwave (HPM) almost equals the electron beam pulse length and the HPM average output power is about 300 MW, with a power efficiency of 10%. When the diode voltage is on a higher level, the output power and efficiency rise but the parasitic mode oscillation occurred and the pulse length is shortened. By contrast, the parasitic mode oscillation is too strong for the RKA to operate normally with un-sintered drift tube. The experimental study implies that FeSiAl is effective in suppressing the parasitic mode oscillation in a certain extent. However, total suppression needs a deeper attenuate rate and further investigation.« less

Method and system for a gas tube switch-based voltage source high voltage direct current transmission system

DOE Office of Scientific and Technical Information (OSTI.GOV)

She, Xu; Chokhawala, Rahul Shantilal; Zhou, Rui

A voltage source converter based high-voltage direct-current (HVDC) transmission system includes a voltage source converter (VSC)-based power converter channel. The VSC-based power converter channel includes an AC-DC converter and a DC-AC inverter electrically coupled to the AC-DC converter. The AC-DC converter and a DC-AC inverter include at least one gas tube switching device coupled in electrical anti-parallel with a respective gas tube diode. The VSC-based power converter channel includes a commutating circuit communicatively coupled to one or more of the at least one gas tube switching devices. The commutating circuit is configured to "switch on" a respective one of themore » one or more gas tube switching devices during a first portion of an operational cycle and "switch off" the respective one of the one or more gas tube switching devices during a second portion of the operational cycle.« less

Apparatus Notes

ERIC Educational Resources Information Center

Eaton, Bruce G., Ed.

1977-01-01

Describes a low-cost wave analyzer; how to convert an incandescant light bulb to an x-ray tube; how to use an electric toothbrush to generate waves; the use of a light-emitting diode as a point light source; how to rejuvenate helium-neon lasers; and calibration of an ammeter. (MLH)

Ionization tube simmer current circuit

DOEpatents

Steinkraus, R.F. Jr.

1994-12-13

A highly efficient flash lamp simmer current circuit utilizes a fifty percent duty cycle square wave pulse generator to pass a current over a current limiting inductor to a full wave rectifier. The DC output of the rectifier is then passed over a voltage smoothing capacitor through a reverse current blocking diode to a flash lamp tube to sustain ionization in the tube between discharges via a small simmer current. An alternate embodiment of the circuit combines the pulse generator and inductor in the form of an FET off line square wave generator with an impedance limited step up output transformer which is then applied to the full wave rectifier as before to yield a similar simmer current. 6 figures.

Ionization tube simmer current circuit

DOEpatents

Steinkraus, Jr., Robert F.

1994-01-01

A highly efficient flash lamp simmer current circuit utilizes a fifty percent duty cycle square wave pulse generator to pass a current over a current limiting inductor to a full wave rectifier. The DC output of the rectifier is then passed over a voltage smoothing capacitor through a reverse current blocking diode to a flash lamp tube to sustain ionization in the tube between discharges via a small simmer current. An alternate embodiment of the circuit combines the pulse generator and inductor in the form of an FET off line square wave generator with an impedance limited step up output transformer which is then applied to the full wave rectifier as before to yield a similar simmer current.

X-ray Photon Counting Using 100 MHz Ready-Made Silicon P-Intrinsic-N X-ray Diode and Its Application to Energy-Dispersive Computed Tomography

NASA Astrophysics Data System (ADS)

Kodama, Hajime; Watanabe, Manabu; Sato, Eiichi; Oda, Yasuyuki; Hagiwara, Osahiko; Matsukiyo, Hiroshi; Osawa, Akihiro; Enomoto, Toshiyuki; Kusachi, Shinya; Sato, Shigehiro; Ogawa, Akira

2013-07-01

X-ray photons are directly detected using a 100 MHz ready-made silicon P-intrinsic-N X-ray diode (Si-PIN-XD). The Si-PIN-XD is shielded using an aluminum case with a 25-µm-thick aluminum window and a BNC connector. The photocurrent from the Si-PIN-XD is amplified by charge sensitive and shaping amplifiers, and the event pulses are sent to a multichannel analyzer (MCA) to measure X-ray spectra. At a tube voltage of 90 kV, we observe K-series characteristic X-rays of tungsten. Photon-counting computed tomography (PC-CT) is accomplished by repeated linear scans and rotations of an object, and projection curves of the object are obtained by linear scanning at a tube current of 2.0 mA. The exposure time for obtaining a tomogram is 10 min with scan steps of 0.5 mm and rotation steps of 1.0°. At a tube voltage of 90 kV, the maximum count rate is 150 kcps. We carry out PC-CT using gadolinium media and confirm the energy-dispersive effect with changes in the lower level voltage of the event pulse using a comparator.

LIGHTING FOR READING: DESIGNING AN LED LUMINAIRE FOR HOMES AND OFFICES

EPA Science Inventory

Energy waste from traditional incandescent light bulbs was reduced by fluorescent lamps, but they pose a threat to the environment due to the mercury in each tube and disposal issues. Light emitting diodes (LEDs) provide superior energy efficiency, longer life, toxin-free comp...

GATING CIRCUITS

DOEpatents

Merrill, L.C.

1958-10-14

Control circuits for vacuum tubes are described, and a binary counter having an improved trigger circuit is reported. The salient feature of the binary counter is the application of the input signal to the cathode of each of two vacuum tubes through separate capacitors and the connection of each cathode to ground through separate diodes. The control of the binary counter is achieved in this manner without special pulse shaping of the input signal. A further advantage of the circuit is the simplicity and minimum nuruber of components required, making its use particularly desirable in computer machines.

Course Objectives: Electronic Fundamentals, EL16.

ERIC Educational Resources Information Center

Wilson, David H.

The general objective, recommended text, and specific objectives of a course titled "Electronic Fundamentals," as offered at St. Lawrence College of Applied Arts and Technology, are provided. The general objective of the course is "to acquire an understanding of diodes, transistors, and tubes, and so be able to analyze the operation…

Intermediate term safety and efficacy of transscleral cyclophotocoagulation after tube shunt failure

PubMed Central

Ness, Peter J.; Khaimi, Mahmoud A.; Feldman, Robert M.; Tabet, Rania; Sarkisian, Steven R.; Skuta, Gregory L.; Chuang, Alice Z.; Mankiewicz, Kimberly A.

2011-01-01

Purpose To determine the efficacy and safety of diode transscleral cyclophotocoagulation (TSCPC) after tube shunt failure. Patients and Methods The patient population consisted of 32 eyes of 31 patients with uncontrolled glaucoma. Each eye had a previously implanted aqueous tube shunt and was currently on maximally tolerated medication. Each eye also underwent TSCPC treatment using the Iridex (Mountain View, CA) diode laser with a maximum of 360 degrees of treatment. All 31 charts were reviewed for data pertaining to demographics, treatment, ocular history, and follow-up clinical examinations. Safety was evaluated by complication data. Efficacy was evaluated in terms of TSCPC treatment parameters (number of laser applications, laser power, application duration, and degrees of ciliary body treated), intraocular pressure (IOP), number of hypotensive medications, and any further treatment required. Results With a mean (SD) follow-up of 17.1 (16.3) (median = 11.7) months from the last treatment, the mean IOP decreased from 28.6 (10.2) mmHg to 16.8 (7.5) mmHg (35% reduction) at 3 months (n = 30, p < 0.0001) and to 14.7 (7.9) mmHg (43% reduction) at 1 year (n = 13, p < 0.0001). Complications included hypotony (n = 4), hyphema (n = 2), failed corneal transplant (n = 1), and loss of light perception (n = 5). Conclusions TSCPC has a significant ocular hypotensive effect on glaucoma refractory to both tube shunt and medical therapy. The safety of this intervention remains unclear in this high risk patient population and warrants further study. PMID:21336148

A low-cost photoacoustic microscopy system with a laser diode excitation

PubMed Central

Wang, Tianheng; Nandy, Sreyankar; Salehi, Hassan S.; Kumavor, Patrick D.; Zhu, Quing

2014-01-01

Photoacoustic microscopy (PAM) is capable of mapping microvasculature networks in biological tissue and has demonstrated great potential for biomedical applications. However, the clinical application of the PAM system is limited due to the use of bulky and expensive pulsed laser sources. In this paper, a low-cost optical-resolution PAM system with a pulsed laser diode excitation has been introduced. The lateral resolution of this PAM system was estimated to be 7 µm by imaging a carbon fiber. The phantoms made of polyethylene tubes filled with blood and a mouse ear were imaged to demonstrate the feasibility of this PAM system for imaging biological tissues. PMID:25401019

PRECISION TIME-DELAY GENERATOR

DOEpatents

Carr, B.J.; Peckham, V.D.

1959-06-16

A precision time-delay generator circuit with low jitter is described. The first thyratron has a series resonant circuit and a diode which is connected to the second thyratron. The first thyratron is triggered at the begin-ning of a time delay and a capacitor is discharged through the first thyratron and the diode, thereby, triggering the second thyratron. (T.R.H.) l6l9O The instrument described can measure pressures between sea level and 300,000 ft. The pressure- sensing transducer of the instrument is a small cylindrical tube with a thin foil of titanium-tritium fastened around the inside of the tube. Output is a digital signal which can be used for storage or telemetering more conveniently than an analog signal. (W.D.M.) l6l9l An experimental study was made on rolling contacts in the temperature range of 550 to 1000 deg F. Variables such as material composition, hardness, and operating conditions were investigated in a rolling test stand. Ball bearing tests were run to determine the effect of design parameters, bearing materials, lubricants, and operating conditions. (auth)

Gain control of photomultiplier tubes used in detecting differential absorption lidar returns

NASA Technical Reports Server (NTRS)

Allen, Robert J. (Inventor)

1989-01-01

A technique for controlling the gain of a photomultiplier tube (PMT) 20. A voltage divider (resistors 45-49 in FIG. 1 and zener diodes 60-65 in FIG. 3) is used to control the potentials on dynodes 5, 7, and 9 of PMT 20. Transistor switches 53 and 58 provide the control of the voltage divider in FIG. 1 and photodiodes 66, 67 and 70 provide the control in FIG. 3. The gain control of PMT 20 is in the range from 100% to less than 0.001% (100,000 to 1).

Evaluation of antimicrobial and thermal effects of diode laser on root canal dentin.

PubMed

Kıvanc, B H; Arısu, H D; Sağlam, B C; Akça, G; Gürel, M A; Görgül, G

2017-12-01

The aim of this study was to evaluate the antimicrobial effects of diode laser and temperature rise on the root surface during application. Thirty-six teeth were chemomechanically prepared and irrigated with 2.5% sodium hypochlorite and 17% ethylenediaminetetraacetic acid, and then autoclaved and incubated with a suspension of Enterococcus faecalis. The specimens were randomly divided into three groups (n = 12): Group 1, irradiated by diode laser at 1.2 W; Group 2, irradiated by diode laser at 2 W; and Group 3, irradiated by diode laser at 3 W. The grown bacteria were counted and the mean numbers of the each test tube were determined. The temperature was measured on the external apical third of the root during laser application. The mean values of results for each group were compared using one-way analysis of variance and Tukey test. No significant difference was obtained among the test groups in terms of the colony counts (P > 0.05). According to the temperature changes, there was a significant difference between groups (P < 0.05). Temperature rises were 16.79°C, 10.20°C, and 6.25°C in Group 3, Group 2, and Group 1, respectively. Diode laser irradiation with 1.2 W demonstrated comparable performance with 2 W and 3 W power sets for elimination of E. faecalis from root canal with less temperature rise.

Increasing Electrochemiluminescence Intensity of a Wireless Electrode Array Chip by Thousands of Times Using a Diode for Sensitive Visual Detection by a Digital Camera.

PubMed

Qi, Liming; Xia, Yong; Qi, Wenjing; Gao, Wenyue; Wu, Fengxia; Xu, Guobao

2016-01-19

Both a wireless electrochemiluminescence (ECL) electrode microarray chip and the dramatic increase in ECL by embedding a diode in an electromagnetic receiver coil have been first reported. The newly designed device consists of a chip and a transmitter. The chip has an electromagnetic receiver coil, a mini-diode, and a gold electrode array. The mini-diode can rectify alternating current into direct current and thus enhance ECL intensities by 18 thousand times, enabling a sensitive visual detection using common cameras or smart phones as low cost detectors. The detection limit of hydrogen peroxide using a digital camera is comparable to that using photomultiplier tube (PMT)-based detectors. Coupled with a PMT-based detector, the device can detect luminol with higher sensitivity with linear ranges from 10 nM to 1 mM. Because of the advantages including high sensitivity, high throughput, low cost, high portability, and simplicity, it is promising in point of care testing, drug screening, and high throughput analysis.

Evaluation of a lower-powered analyzer and sampling system for eddy-covariance measurements of nitrous oxide fluxes

NASA Astrophysics Data System (ADS)

Brown, Shannon E.; Sargent, Steve; Wagner-Riddle, Claudia

2018-03-01

Nitrous oxide (N2O) fluxes measured using the eddy-covariance method capture the spatial and temporal heterogeneity of N2O emissions. Most closed-path trace-gas analyzers for eddy-covariance measurements have large-volume, multi-pass absorption cells that necessitate high flow rates for ample frequency response, thus requiring high-power sample pumps. Other sampling system components, including rain caps, filters, dryers, and tubing, can also degrade system frequency response. This field trial tested the performance of a closed-path eddy-covariance system for N2O flux measurements with improvements to use less power while maintaining the frequency response. The new system consists of a thermoelectrically cooled tunable diode laser absorption spectrometer configured to measure both N2O and carbon dioxide (CO2). The system features a relatively small, single-pass sample cell (200 mL) that provides good frequency response with a lower-powered pump ( ˜ 250 W). A new filterless intake removes particulates from the sample air stream with no additional mixing volume that could degrade frequency response. A single-tube dryer removes water vapour from the sample to avoid the need for density or spectroscopic corrections, while maintaining frequency response. This eddy-covariance system was collocated with a previous tunable diode laser absorption spectrometer model to compare N2O and CO2 flux measurements for two full growing seasons (May 2015 to October 2016) in a fertilized cornfield in Southern Ontario, Canada. Both spectrometers were placed outdoors at the base of the sampling tower, demonstrating ruggedness for a range of environmental conditions (minimum to maximum daily temperature range: -26.1 to 31.6 °C). The new system rarely required maintenance. An in situ frequency-response test demonstrated that the cutoff frequency of the new system was better than the old system (3.5 Hz compared to 2.30 Hz) and similar to that of a closed-path CO2 eddy-covariance system (4.05 Hz), using shorter tubing and no dryer, that was also collocated at the site. Values of the N2O fluxes were similar between the two spectrometer systems (slope = 1.01, r2 = 0.96); CO2 fluxes as measured by the short-tubed eddy-covariance system and the two spectrometer systems correlated well (slope = 1.03, r2 = 0.998). The new lower-powered tunable diode laser absorption spectrometer configuration with the filterless intake and single-tube dryer showed promise for deployment in remote areas.

Photobiomodulation of freshly isolated human adipose tissue-derived stromal vascular fraction cells by pulsed light-emitting diodes for direct clinical application.

PubMed

Priglinger, E; Maier, J; Chaudary, S; Lindner, C; Wurzer, C; Rieger, S; Redl, H; Wolbank, S; Dungel, P

2018-06-01

A highly interesting source for adult stem cells is adipose tissue, from which the stromal vascular fraction (SVF)-a heterogeneous cell population including the adipose-derived stromal/stem cells-can be obtained. To enhance the regenerative potential of freshly isolated SVF cells, low-level light therapy (LLLT) was used. The effects of pulsed blue (475 nm), green (516 nm), and red (635 nm) light from light-emitting diodes applied on freshly isolated SVF were analysed regarding cell phenotype, cell number, viability, adenosine triphosphate content, cytotoxicity, and proliferation but also osteogenic, adipogenic, and proangiogenic differentiation potential. The colony-forming unit fibroblast assay revealed a significantly increased colony size after LLLT with red light compared with untreated cells, whereas the frequency of colony-forming cells was not affected. LLLT with green and red light resulted in a stronger capacity to form vascular tubes by SVF when cultured within 3D fibrin matrices compared with untreated cells, which was corroborated by increased number and length of the single tubes and a significantly higher concentration of vascular endothelial growth factor. Our study showed beneficial effects after LLLT on the vascularization potential and proliferation capacity of SVF cells. Therefore, LLLT using pulsed light-emitting diode light might represent a new approach for activation of freshly isolated SVF cells for direct clinical application. Copyright © 2018 John Wiley & Sons, Ltd.

High-sensitive computed tomography system using a silicon-PIN x-ray diode

NASA Astrophysics Data System (ADS)

Sato, Eiichi; Sato, Yuich; Abudurexiti, Abulajiang; Hagiwara, Osahiko; Matsukiyo, Hiroshi; Osawa, Akihiro; Enomoto, Toshiyuki; Watanabe, Manabu; Kusachi, Shinya; Sato, Shigehiro; Ogawa, Akira; Onagawa, Jun

2012-10-01

A low-dose-rate X-ray computed tomography (CT) system is useful for reducing absorbed dose for patients. The CT system with a tube current of 1.91 mA was developed using a silicon-PIN X-ray diode (Si-PIN-XD). The Si-PIN-XD is a selected high-sensitive Si-PIN photodiode (PD) for detecting X-ray photons. X-ray photons are detected directly using the Si-PIN-XD without a scintillator, and the photocurrent from the diode is amplified using current-voltage and voltage-voltage amplifiers. The output voltage is converted into logical pulses using a voltage-frequency converter with maximum frequency of 500 kHz, and the frequency is proportional to the voltage. The pulses from the converter are sent to differentiator with a time constant of 1 μs to generate short positive pulses for counting, and the pulses are counted using a counter card. Tomography is accomplished by repeated linear scans and rotations of an object, and projection curves of the object are obtained by the linear scan. The exposure time for obtaining a tomogram was 5 min at a scan step of 0.5 mm and a rotation step of 3.0°. The tube current and voltage were 1.91 mA and 100 kV, respectively, and gadolinium K-edge CT was carried out using filtered X-ray spectra with a peak energy of 52 keV.

White organic light-emitting diodes with fluorescent tube efficiency.

PubMed

Reineke, Sebastian; Lindner, Frank; Schwartz, Gregor; Seidler, Nico; Walzer, Karsten; Lüssem, Björn; Leo, Karl

2009-05-14

The development of white organic light-emitting diodes (OLEDs) holds great promise for the production of highly efficient large-area light sources. High internal quantum efficiencies for the conversion of electrical energy to light have been realized. Nevertheless, the overall device power efficiencies are still considerably below the 60-70 lumens per watt of fluorescent tubes, which is the current benchmark for novel light sources. Although some reports about highly power-efficient white OLEDs exist, details about structure and the measurement conditions of these structures have not been fully disclosed: the highest power efficiency reported in the scientific literature is 44 lm W(-1) (ref. 7). Here we report an improved OLED structure which reaches fluorescent tube efficiency. By combining a carefully chosen emitter layer with high-refractive-index substrates, and using a periodic outcoupling structure, we achieve a device power efficiency of 90 lm W(-1) at 1,000 candelas per square metre. This efficiency has the potential to be raised to 124 lm W(-1) if the light outcoupling can be further improved. Besides approaching internal quantum efficiency values of one, we have also focused on reducing energetic and ohmic losses that occur during electron-photon conversion. We anticipate that our results will be a starting point for further research, leading to white OLEDs having efficiencies beyond 100 lm W(-1). This could make white-light OLEDs, with their soft area light and high colour-rendering qualities, the light sources of choice for the future.

About plasma points' generation in Z-pinch

NASA Astrophysics Data System (ADS)

Afonin, V. I.; Potapov, A. V.; Lazarchuk, V. P.; Murugov, V. M.; Senik, A. V.

1997-05-01

The streak tube study results (at visible and x-ray ranges) of dynamics of fast Z-pinch formed at explosion of metal wire in diode of high current generator are presented. Amplitude of current in the load reached ˜180 kA at increase time ˜50 ns. The results' analysis points to capability of controlling hot plasma points generation process in Z-pinch.

Temporal response of a surface flashover on a velvet cathode in a relativistic diode

DOE PAGES

Coleman, J. E.; Moir, D. C.; Crawford, M. T.; ...

2015-03-11

Surface flashover of a carbon fiber velvet cathode generates a discharge from which electrons are relativistically accelerated to γ ranging from 4.9 to 8.8 through a 17.8 cm diode. This discharge is assumed to be a hydrocarbon mixture. Our objective is to quantify the dynamics over the ~100 ns pulse of the plasma discharge generated on the surface of the velvet cathode and across the anode-cathode (A-K) gap. We present a qualitative comparison of calculated and measured results, which includes time resolved measurements with a photomultiplier tube and charge-coupled device images. Additionally, initial visible spectroscopy measurements will also be presentedmore » confirming the ion species are dominated by hydrogen.« less

Advanced Wavefront Sensor Concepts.

DTIC Science & Technology

1981-01-01

internal optics (a) Characteristics (see Figure 47) - Intensification with a 256 element linear self scanned diode array - Optical input; lenticular ...34 diameter - Lenticular array input to fiber optics which spread out to tubes - Photon counting for low noise fac- tor (b) Pe r fo rmance - Bialkali...problem in making the lenslet arrays in the pupil divider rectangular. The last optical elements are the lenticular lens arrays. In this group, the first

Use of vacuum tubes in test instrumentation for measuring characteristics of fast high-voltage semiconductor devices

NASA Technical Reports Server (NTRS)

Berning, D.

1981-01-01

Circuits are described that permit measurement of fast events occurring in power semiconductors. These circuits were developed for the dynamic characterization of transistors used in inductive-load switching applications. Fast voltage clamping using vacuum diodes is discussed, and reference is made to a unique circuit that was built for performing nondestructive, reverse-bias, second-breakdown tests on transistors.

High-intensity soft-flash x-ray generator utilizing a low-vacuum diode

NASA Astrophysics Data System (ADS)

Isobe, Hiroshi; Sato, Eiichi; Shikoda, Arimitsu; Takahashi, Kei; Tamakawa, Yoshiharu; Yanagisawa, Toru

1991-04-01

The fundamental studies on the high-intensity single flash x-ray generator having a low-vacuum diode for biomedical radiography are described. This generator consisted of the following essential components: a high-voltage power supply, a high-voltage pulser with a coaxial oil condenser of l5OnF, a low impedance transmission line made from four coaxial cables with lengths of 5. 6m and a total capacity of 292OpF, a mechanical booster pump, and a flash x-ray tube. The x-ray tube was of the diode-type which was connected to the booster pump with a constant pressure of 1. 7Pa and consisted of the following major devices: a long anode tip made of tungsten with a diameter (D) of less than 3. 0mm and a length (L) of 50mm, a long cathode tip made of tungsten with a D of 1. 0mm and a L of 40mm, a polyoxymethylene insulator, lead diaphragms, and an x-ray window made of polyethylene terephthalate. The coaxial oil condenser in the pulser was charged from 50 to 90kV, and the electric charges in the condenser were discharged to the flash x-ray tube through a transmission line by using a gas gap switch with a highcurrent capacity. The peak voltage increased according to increases in the condenser charged voltage and its value was more than the charged voltage. The peak current primarily increased when the charged voltage was increased, and its value was less than 4OkA. The pulse width of the flash x-rays ranged from 60 to 8Ons, and the time integrated x-ray intensity with a charged voltage of 90kV and an anode cathode (A-C) space of 3. 0mm was about 4pC/kg at 1. Om per pulse the source. The effective focal spot size was primarily determined by the diameter of the anode tip, and its value was about 3. 0mm when an anode diameter of 3. 0mm was employed.

A personalized food allergen testing platform on a cellphone

PubMed Central

Coskun, Ahmet F.; Wong, Justin; Khodadadi, Delaram; Nagi, Richie; Tey, Andrew; Ozcan, Aydogan

2013-01-01

We demonstrate a personalized food allergen testing platform, termed iTube, running on a cellphone that images and automatically analyses colorimetric assays performed in test tubes toward sensitive and specific detection of allergens in food samples. This cost-effective and compact iTube attachment, weighing approximately 40 grams, is mechanically installed on the existing camera unit of a cellphone where the test and control tubes are inserted from the side and are vertically illuminated by two separate light-emitting-diodes. The illumination light is absorbed by the allergen assay that is activated within the tubes, causing an intensity change in the acquired images by the cellphone camera. These transmission images of the sample and control tubes are digitally processed within1 sec using a smart application running on the same cellphone for detection and quantification of allergen contamination in food products. We evaluated the performance of this cellphone based iTube platform using different types of commercially available cookies, where the existence of peanuts was accurately quantified after a sample preparation and incubation time of ~20 min per test. This automated and cost-effective personalized food allergen testing tool running on cellphones can also permit uploading of test results to secure servers to create personal and/or public spatio-temporal allergen maps, which can be useful for public health in various settings. PMID:23254910

Results of a new “mirror tuck technique” for fixation of lacrimal bypass tube in conjunctivodacryocystorhinostomy

PubMed Central

Goel, Ruchi; Kishore, Divya; Nagpal, Smriti; Kumar, Sushil; Rathie, Neha

2017-01-01

Context: Conjunctivodacryocystorhinostomy (CDCR) is the procedure of choice for proximal canalicular blocks. However, the complications of tube migration and extrusion limit its widespread practice. Aim: The aim of this study is to evaluate the efficacy and complications of the new “mirror tuck technique” for fixation of lacrimal bypass glass tube without holes in proximal canalicular blocks in laser CDCR. Materials and Methods: A prospective interventional study was conducted in forty consecutive eyes of adult patients, undergoing 980 nm diode laser CDCR for proximal canalicular blocks. After creating the tract under endoscopic guidance, the collar of the glass tube was fixed to the conjunctiva with 6-0 prolene suture by “mirror tuck technique.” Success was defined as the absence of extrusion of tube with patent tract and relief in epiphora at 1 year of follow-up. Results: Both anatomical and functional success was achieved in 39 (97.5%) cases. Tube displacement occurred in one patient suffering from allergic conjunctivitis in which the tube had to be removed. A temporary heaviness was reported by 5 (12.5%) patients till about 2 weeks. Conjunctival overgrowth over the tube occurred in 1 (2.5%) eye at 5 months which was excised and treated with application of 0.02% mitomycin C with no subsequent recurrence. There were no cases of suture abscess or suture intolerance warranting tube removal. Conclusion: “Mirror tuck technique” is an effective method for tube fixation (for tube without holes) in CDCR. However, it is important to position the conjunctival opening so as to leave sufficient space for passage of sutures for anchorage medially. PMID:28513491

Laser Brazing of High Temperature Braze Alloy

NASA Technical Reports Server (NTRS)

Gao, Y. P.; Seaman, R. F.; McQuillan, T. J.; Martiens, R. F.

2000-01-01

The Space Shuttle Main Engine (SSME) consists of 1080 conical tubes, which are furnace brazed themselves, manifolds, and surrounding structural jacket making almost four miles of braze joints. Subsequent furnace braze cycles are performed due to localized braze voids between the coolant tubes. SSME nozzle experiences extremely high heat flux (180 mW/sq m) during hot fire. Braze voids between coolant tubes may result in hot combustion gas escape causing jacket bulges. The nozzle can be disqualified for flight or result in mission failure if the braze voids exceed the limits. Localized braze processes were considered to eliminate braze voids, however, damage to the parent materials often prohibited use of such process. Being the only manned flight reusable rocket engine, it has stringent requirement on the braze process. Poor braze quality or damage to the parent materials limits the nozzle service life. The objective of this study was to develop a laser brazing process to provide quality, localized braze joints without adverse affect on the parent materials. Gold (Au-Cu-Ni-Pd-Mn) based high temperature braze alloys were used in both powder and wire form. Thin section iron base superalloy A286 tube was used as substrate materials. Different Laser Systems including CO2 (10.6 micrometers, 1kW), ND:YAG (1.06 micrometers, 4kW). and direct diode laser (808nm. 150W) were investigated for brazing process. The laser process variables including wavelength. laser power, travel speed and angle of inclination were optimized according to bead geometry and braze alloy wetting at minimum heat input level, The properties of laser brazing were compared to that of furnace brazing. Microhardness profiles were used for braze joint property comparison between laser and furnace brazing. The cooling rate of laser brazing was compared to furnace brazing based on secondary dendritic arm spacing, Both optical and Scanning Electron Microscope (SEM) were used to evaluate the microstructures of the braze materials and tube substrate. Metallography of the laser braze joint was compared to the furnace braze. SEM Energy Disperse X-Ray Spectra (EDX) and back scattered imaging were used to analyze braze alloy segregation. Although all of the laser systems, CO2, ND:YAG, and direct diode laser produced good braze joint, the direct diode laser was selected for its system simplicity, compactness and portability. Excellent laser and braze alloy coupling is observed with powder alloy compared to braze alloy wire. Good wetting is found with different gold based braze alloys. The laser brazing process can be optimized so that the adverse affect on the parent materials can be eliminated. Metallography of the laser braze joint has shown that quality braze joint was produced with laser brazing process. Penetration of the laser braze to the substrate is at neglectable level. Zero penetration is observed. Microstructure examinations shown that no observable changes of the microstructure (grain structure and precipitation) in the HAZ area between laser braze and furnace braze. Wide gaps can be laser brazed with single pass for up to 0.024 inches. Finer dendritic structure is observed in laser brazing compared with equiaxial and coarser grain of the furnace brazing microstructure. Greater segregation is also found in the furnace braze. Higher hardness of the laser braze joint comparing to furnace braze is observed due to the fast cooling rate and Finer microstructure in the laser brazing. Laser braze joint properties meet or exceed the furnace joint properties. Direct diode laser for thin section tube brazing with high temperature braze alloys have been successfully demonstrated. The laser's high energy density and precise control has shown significant advantages in reducing process heat input to the substrates and provide high quality braze joints comparing to other localized braze process such as torch, TIG, and MPTA processes. Significant cost savings can be realized particularly with localized braze comparing to a full furnace braze cycle.

Low-Dose-Rate Computed Tomography System Utilizing 25 mm/s-Scan Silicon X-ray Diode and Its Application to Iodine K-Edge Imaging Using Filtered Bremsstrahlung Photons

NASA Astrophysics Data System (ADS)

Matsushita, Ryo; Sato, Eiichi; Yanbe, Yutaka; Chiba, Hiraku; Maeda, Tomoko; Hagiwara, Osahiko; Matsukiyo, Hiroshi; Osawa, Akihiro; Enomoto, Toshiyuki; Watanabe, Manabu; Kusachi, Shinya; Sato, Shigehiro; Ogawa, Akira; Onagawa, Jun

2013-03-01

A low-dose-rate X-ray computed tomography (CT) system is useful for reducing absorbed dose for patients. The CT system with a tube current of sub-mA was developed using a silicon X-ray diode (Si-XD). The Si-XD is a high-sensitivity Si photodiode (PD) selected for detecting X-ray photons, and the X-ray sensitivity of the Si-XD was twice as high as that of Si-PD cerium-doped yttrium aluminum perovskite [YAP(Ce)]. X-ray photons are directly detected using the Si-XD without a scintillator, and the photocurrent from the diode is amplified using current-voltage and voltage-voltage amplifiers. The output voltage is converted into logical pulses using a voltage-frequency converter with a maximum frequency of 500 kHz, and the frequency is proportional to the voltage. The pulses from the converter are sent to the differentiator with a time constant of 500 ns to generate short positive pulses for counting, and the pulses are counted using a counter card. Tomography is accomplished by repeated linear scans and rotations of an object, and projection curves of the object are obtained by the linear scan. The exposure time for obtaining a tomogram was 5 min at a scan step of 0.5 mm and a rotation step of 3.0°. The tube current and voltage were 0.55 mA and 60 kV, respectively, and iodine K-edge CT was carried out using filtered bremsstrahlung X-ray spectra with a peak energy of 38 keV.

Development of laser diode otolaryngological intracavity procedures and its clinical practice

NASA Astrophysics Data System (ADS)

Wang, Qingguo; Mao, Haitao; Bu, Hongjian; Dong, Xingfa; Li, Jikai; Li, Fangzheng; Zhang, Wenqing

1998-08-01

Because laser is diffusely reflected by the skin as well as scattered and absorbed by the subcutaneous tissue, the lasing intensity which enters into the tissue through the skin is exponentially attenuated with the increase in the depth. Therefore, when the medium-small energy laser is transmitted to the tissue depth through the skin, the lasing intensity is quite finite. However, a lot of diseases occur in the crooked and narrow tube, sinus or deep tissue, for these diseases, it is difficult to get the curative effect by normal laser radiation. As above, we have developed an otolaryngological intracavity therapeutic apparatus of laser diode. Visible GaAlAs laser diode is adopted on this apparatus, its lasing wavelength is 670 nm. The lasing beam is guided into the crooked and narrow tube, sinus or deep tissue, which passes through the optical fiber and the laser pins of different forms and sizes (such as straight, curved and sidelight etc.). Using the fiber-optic connector the laser pins can be changed conveniently. The lasing output power of laser pin can be adjusted from 0 to 20 mW. The lasing intensity may be modulated which changes the rectangular wave form 0 to 1 kHz. Five hundred patients were suffering from 35 kind of otolaryngological diseases were treated in the period of clinical test. The rate of efficiency (cure or improvement) is 89%. Nobody had the side effect or deteriorated. This apparatus has the best curative effect on the inflammation of the mucosa and shallow tissue, such as auris media dropsy, maxillary sinus inflammation, auris external inflammation, chronic laryngitis, otitis media, tinnitus, vertigo, and so on.

Light-emitting diode-based multiwavelength diffuse optical tomography system guided by ultrasound

PubMed Central

Yuan, Guangqian; Alqasemi, Umar; Chen, Aaron; Yang, Yi; Zhu, Quing

2014-01-01

Abstract. Laser diodes are widely used in diffuse optical tomography (DOT) systems but are typically expensive and fragile, while light-emitting diodes (LEDs) are cheaper and are also available in the near-infrared (NIR) range with adequate output power for imaging deeply seated targets. In this study, we introduce a new low-cost DOT system using LEDs of four wavelengths in the NIR spectrum as light sources. The LEDs were modulated at 20 kHz to avoid ambient light. The LEDs were distributed on a hand-held probe and a printed circuit board was mounted at the back of the probe to separately provide switching and driving current to each LED. Ten optical fibers were used to couple the reflected light to 10 parallel photomultiplier tube detectors. A commercial ultrasound system provided simultaneous images of target location and size to guide the image reconstruction. A frequency-domain (FD) laser-diode-based system with ultrasound guidance was also used to compare the results obtained from those of the LED-based system. Results of absorbers embedded in intralipid and inhomogeneous tissue phantoms have demonstrated that the LED-based system provides a comparable quantification accuracy of targets to the FD system and has the potential to image deep targets such as breast lesions. PMID:25473884

Temporal response of a surface flashover on a velvet cathode in a relativistic diode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Coleman, J. E.; Moir, D. C.; Crawford, M. T.

2015-03-15

Surface flashover of a carbon fiber velvet cathode generates a discharge from which electrons are relativistically accelerated to γ ranging from 4.9 to 8.8 through a 17.8 cm diode. This discharge is assumed to be a hydrocarbon mixture. The principal objective of these experiments is to quantify the dynamics over the ∼100 ns pulse of the plasma discharge generated on the surface of the velvet cathode and across the anode-cathode (A-K) gap. A qualitative comparison of calculated and measured results is presented, which includes time resolved measurements with a photomultiplier tube and charge-coupled device images. In addition, initial visible spectroscopy measurements willmore » also be presented confirming the ion species are dominated by hydrogen.« less

A fiber optic, ultraviolet light-emitting diode-based, two wavelength fluorometer for monitoring reactive adsorption

DOE Office of Scientific and Technical Information (OSTI.GOV)

Granz, Christopher D.; Whitten, James E., E-mail: James-Whitten@uml.edu; Schindler, Bryan J.

Construction and use of an ultraviolet light-emitting diode-based fluorometer for measuring photoluminescence (PL) from powder samples with a fiber optic probe is described. Fluorescence at two wavelengths is detected by miniature photomultiplier tubes, each equipped with a different band pass filter, whose outputs are analyzed by a microprocessor. Photoluminescent metal oxides and hydroxides, and other semiconducting nanoparticles, often undergo changes in their emission spectra upon exposure to reactive gases, and the ratio of the PL intensities at two wavelengths is diagnostic of adsorption. Use of this instrument for reactive gas sensing and gas filtration applications is illustrated by measuring changesmore » in the PL ratio for zirconium hydroxide and zinc oxide particles upon exposure to air containing low concentrations of sulfur dioxide.« less

A CMOS Time-Resolved Fluorescence Lifetime Analysis Micro-System

PubMed Central

Rae, Bruce R.; Muir, Keith R.; Gong, Zheng; McKendry, Jonathan; Girkin, John M.; Gu, Erdan; Renshaw, David; Dawson, Martin D.; Henderson, Robert K.

2009-01-01

We describe a CMOS-based micro-system for time-resolved fluorescence lifetime analysis. It comprises a 16 × 4 array of single-photon avalanche diodes (SPADs) fabricated in 0.35 μm high-voltage CMOS technology with in-pixel time-gated photon counting circuitry and a second device incorporating an 8 × 8 AlInGaN blue micro-pixellated light-emitting diode (micro-LED) array bump-bonded to an equivalent array of LED drivers realized in a standard low-voltage 0.35 μm CMOS technology, capable of producing excitation pulses with a width of 777 ps (FWHM). This system replaces instrumentation based on lasers, photomultiplier tubes, bulk optics and discrete electronics with a PC-based micro-system. Demonstrator lifetime measurements of colloidal quantum dot and Rhodamine samples are presented. PMID:22291564

Edge multi-energy soft x-ray diagnostic in Experimental Advanced Superconducting Tokamak

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Y. L.; Xu, G. S.; Wan, B. N.

A multi-energy soft x-ray (ME-SXR) diagnostic has been built for electron temperature profile in the edge plasma region in Experimental Advanced Superconducting Tokamak (EAST) after two rounds of campaigns. Originally, five preamplifiers were mounted inside the EAST vacuum vessel chamber attached to five vertically stacked compact diode arrays. A custom mechanical structure was designed to protect the detectors and electronics under constraints of the tangential field of view for plasma edge and the allocation of space. In the next experiment, the mechanical structure was redesigned with a barrel structure to absolutely isolate it from the vacuum vessel. Multiple shielding structuresmore » were mounted at the pinhole head to protect the metal foils from lithium coating. The pre-amplifiers were moved to the outside of the vacuum chamber to avoid introducing interference. Twisted copper cooling tube was embedded into the back-shell near the diode to limit the temperature of the preamplifiers and diode arrays during vacuum vessel baking when the temperature reached 150 °C. Electron temperature profiles were reconstructed from ME-SXR measurements using neural networks.« less

Tracheal anastomosis using indocyanine green dye enhanced fibrinogen with a near-infrared diode laser

NASA Astrophysics Data System (ADS)

Auteri, Joseph S.; Jeevanandam, Valluvan; Oz, Mehmet C.; Libutti, Steven K.; Kirby, Thomas J.; Smith, Craig R.; Treat, Michael R.

1990-06-01

A major obstacle to lung transplantation and combined heart- lung transplantation is dehiscence of the tracheobronchial anastomosis. We explored the possibility of laser welded anastomoses in canine tracheas in vivo. Laser anastomoses were performed on three-quarter circumferential anterior tracheotomies. A continous wave diode laser (808 +1 nm) at a power density of 9.6 watts/cm was used. Human fibrinogen was mixed with indocyanine green dye (ICG, max absorbance 805 nm) and applied to the anastomosis site prior to laser exposure. Animals were sacrificed at 0, 21 and 28 days post-operatively. At sacrifice weld bursting pressures were measured by raising intratracheal pressure using forced ventilation via an endotracheal tube. Sutured and laser welded anastomoses had similar bursting pressures, and exhibited satisfactory histologic evidence of healing. However, compared to polypropylene sutured controls, the laser welded anastomoses exhibited less peritracheal inflammatory reaction and showed visibly smoother luminal surfaces at 21 and 28 days post- operatively. Tracheal anastomosis using ICG dye enhanced fibrinogen combined with the near-infrared diode laser is a promising extension of the technology of laser tissue fusion and deserves further study.

Intense Pulsed Heavy Ion Beam Technology

NASA Astrophysics Data System (ADS)

Masugata, Katsumi; Ito, Hiroaki

Development of intense pulsed heavy ion beam accelerator technology is described for the application of materials processing. Gas puff plasma gun and vacuum arc discharge plasma gun were developed as an active ion source for magnetically insulated pulsed ion diode. Source plasma of nitrogen and aluminum were successfully produced with the gas puff plasma gun and the vacuum arc plasma gun, respectively. The ion diode was successfully operated with gas puff plasma gun at diode voltage 190 kV, diode current 2.2 kA and nitrogen ion beam of ion current density 27 A/cm2 was obtained. The ion composition was evaluated by a Thomson parabola spectrometer and the purity of the nitrogen ion beam was estimated to be 86%. The diode also operated with aluminum ion source of vacuum arc plasma gun. The ion diode was operated at 200 kV, 12 kA, and aluminum ion beam of current density 230 A/cm2 was obtained. The beam consists of aluminum ions (Al(1-3)+) of energy 60-400 keV, and protons (90-130 keV), and the purity was estimated to be 89 %. The development of the bipolar pulse accelerator (BPA) was reported. A double coaxial type bipolar pulse generator was developed as the power supply of the BPA. The generator was tested with dummy load of 7.5 ohm, bipolar pulses of -138 kV, 72 ns (1st pulse) and +130 kV, 70 ns (2nd pulse) were succesively generated. By applying the bipolar pulse to the drift tube of the BPA, nitrogen ion beam of 2 A/cm2 was observed in the cathode, which suggests the bipolar pulse acceleration.

Design of a Tunable, Room Temperature, Continuous-Wave Terahertz Source and Detector using Silicon Waveguides

DTIC Science & Technology

2008-01-30

that will use conventional diode- or hotomultiplier-tube-based optical detectors , which are xtremely sensitive . . HEATING AND FREE-CARRIER IMITATIONS...CONTRACT NUMBER IN-HOUSE Design of a tunable, room temperature, continuous-wave terahertz source and detector using silicon waveguides 5b. GRANT...B 261Design of a tunable, room temperature, continuous-wave terahertz source and detector using silicon waveguides T. Baehr-Jones,1,* M. Hochberg,1,3

Optical Fiber Demodulation System with High Performance for Assessing Fretting Damage of Steam Generator Tubes

PubMed Central

Huang, Peijian; Wang, Ning; Li, Junying; Zhu, Yong; Zhang, Jie; Xi, Zhide

2018-01-01

In order to access the fretting damage of the steam generator tube (SGT), a fast fiber Fabry-Perot (F-P) non-scanning correlation demodulation system based on a super luminescent light emitting diode (SLED) was performed. By demodulating the light signal coming out from the F-P force sensor, the radial collision force between the SGT and the tube support plate (TSP) was interrogated. For higher demodulation accuracy, the effects of the center wavelength, bandwidth, and spectrum noise of SLED were discussed in detail. Specially, a piezoelectric ceramic transducer (PZT) modulation method was developed to get rid of the interference of mode coupling induced by different types of fiber optics in the demodulation system. The reflectivity of optical wedge and F-P sensor was optimized. Finally, the demodulation system worked well in a 1:1 steam generator test loop and successfully demodulated a force signal of 32 N with a collision time of 2 ms. PMID:29329225

Compact vacuum tubes with GaAs(Cs,O) photocathodes for studying spin-dependent phenomena

NASA Astrophysics Data System (ADS)

Alperovich, V. L.; Orlov, D. A.; Grishaev, V. G.; Kosolobov, S. N.; Jaroshevich, A. S.; Scheibler, H. E.; Terekhov, A. S.

2009-08-01

Compact proximity focused vacuum tubes with GaAs(Cs,O) photocathodes are used for experimental studying spindependent phenomena. Firstly, spin-dependent emission of optically oriented electrons from p-GaAs(Cs,O) into vacuum in a magnetic field normal to the surface was observed in a nonmagnetic vacuum diode. This phenomenon is explained by the jump in the electron g-factor at the semiconductor-vacuum interface. Due to this jump, the effective electron affinity on the semiconductor surface depends on the mutual direction of optically oriented electron spins and the magnetic field, resulting in the spin-dependent photoemission. It is demonstrated that the observed effect can be used for the determination of spin diffusion length in semiconductors. Secondly, we developed a prototype of a new spin filter, which consists of a vacuum tube with GaAs(Cs,O) photocathode and a nickel-covered venetian blind dynode. Preliminary results on spin-dependent reflection of electrons from the oxidized polycrystal nickel layer are presented.

Optical Fiber Demodulation System with High Performance for Assessing Fretting Damage of Steam Generator Tubes.

PubMed

Huang, Peijian; Wang, Ning; Li, Junying; Zhu, Yong; Zhang, Jie; Xi, Zhide

2018-01-12

In order to access the fretting damage of the steam generator tube (SGT), a fast fiber Fabry-Perot (F-P) non-scanning correlation demodulation system based on a super luminescent light emitting diode (SLED) was performed. By demodulating the light signal coming out from the F-P force sensor, the radial collision force between the SGT and the tube support plate (TSP) was interrogated. For higher demodulation accuracy, the effects of the center wavelength, bandwidth, and spectrum noise of SLED were discussed in detail. Specially, a piezoelectric ceramic transducer (PZT) modulation method was developed to get rid of the interference of mode coupling induced by different types of fiber optics in the demodulation system. The reflectivity of optical wedge and F-P sensor was optimized. Finally, the demodulation system worked well in a 1:1 steam generator test loop and successfully demodulated a force signal of 32 N with a collision time of 2 ms.

Low-frequency wide-field fluorescence lifetime imaging using a high-power near-infrared light-emitting diode light source

PubMed Central

Gioux, Sylvain; Lomnes, Stephen J.; Choi, Hak Soo; Frangioni, John V.

2010-01-01

Fluorescence lifetime imaging (FLi) could potentially improve exogenous near-infrared (NIR) fluorescence imaging, because it offers the capability of discriminating a signal of interest from background, provides real-time monitoring of a chemical environment, and permits the use of several different fluorescent dyes having the same emission wavelength. We present a high-power, LED-based, NIR light source for the clinical translation of wide-field (larger than 5 cm in diameter) FLi at frequencies up to 35 MHz. Lifetime imaging of indocyanine green (ICG), IRDye 800-CW, and 3,3′-diethylthiatricarbocyanine iodide (DTTCI) was performed over a large field of view (10 cm by 7.5 cm) using the LED light source. For comparison, a laser diode light source was employed as a gold standard. Experiments were performed both on the bench by diluting the fluorescent dyes in various chemical environments in Eppendorf tubes, and in vivo by injecting the fluorescent dyes mixed in Matrigel subcutaneously into CD-1 mice. Last, measured fluorescence lifetimes obtained using the LED and the laser diode sources were compared with those obtained using a state-of-the-art time-domain imaging system and with those previously described in the literature. On average, lifetime values obtained using the LED and the laser diode light sources were consistent, exhibiting a mean difference of 3% from the expected values and a coefficient of variation of 12%. Taken together, our study offers an alternative to laser diodes for clinical translation of FLi and explores the use of relatively low frequency modulation for in vivo imaging. PMID:20459250

Pediatric endocanalicular diode laser dacryocystorhinostomy: results of a minimally invasive surgical technique.

PubMed

Uysal, Ismail Onder; Ozçimen, Muammer; Yener, Halil Ibrahim; Kal, Ali

2011-09-01

The purpose of this study was to evaluate the effectiveness of endocanalicular diode laser dacryocystorhinostomy (DCR), which is a minimally invasive surgical technique, in pediatric patients with congenital nasolacrimal duct obstruction (NLDO). A retrospective study was carried out on patients treated between October 2008 and August 2009 for nasolacrimal duct obstruction with an endocanalicular diode laser procedure. Patients diagnosed as having nasolacrimal duct obstruction were included in this study and an endocanalicular diode laser procedure was performed. The main outcome measures were patients' previous treatments, clinical presentation, operative and postoperative complications, postoperative follow-up and resolution of epiphora. Eighteen children (10 girls, 8 boys) with a mean age of 6.11 ± 2.08 years (range, 4-10) underwent 20 endocanalicular laser DCR operations for congenital NLDO. In all eyes (100%), there was a history of epiphora and chronic dacryocystitis; two (10%) presented with acute dacryocystitis. Previous procedures included probing and irrigation of all eyes (100%) and silicone tube intubation in nine eyes (45%). None of the patients underwent any previous DCR operations. During a mean postoperative follow-up period of 20.50 ± 3.24 months (range, 14-24 months), the anatomical success rate (patency of ostium on nasal endoscopy) was 100%, and the clinical success rate (resolution of epiphora) was 85%. Endocanalicular diode laser DCR is an effective treatment modality for pediatric patients with congenital NLDO that compares favorably with the reported success rates of external and endoscopic endonasal DCR. Moreover, it has an added advantage of shorter operative time, less morbidity and avoidance of overnight admission.

Endoluminal laser delivery mode and wavelength effects on varicose veins in an ex vivo model.

PubMed

Massaki, Ane B M N; Kiripolsky, Monika G; Detwiler, Susan P; Goldman, Mitchel P

2013-02-01

Endovenous laser ablation (EVLA) has been shown to be effective for the elimination of saphenous veins and associated reflux. Mechanism is known to be heat related, but precise way in which heat causes vein ablation is not completely known. This study aimed to determine the effects of various endovenous laser wavelengths and delivery modes on ex vivo human vein both macroscopically and microscopically. We also evaluated whether protected-tip fibers, consisting of prototype silica fibers with a metal tube over the distal end, reduced vein wall perforations compared with non-protected-tip fibers. An ex vivo EVLA model with human veins harvested during ambulatory phlebectomy procedures was used. Six laser fiber combinations were tested: 810 nm continuous wave (CW) diode laser with a flat tip fiber, 810 CW diode laser with a protected tip fiber, 1,320 nm pulsed Nd:YAG laser, 1,310 nm CW diode laser, 1,470 nm CW diode laser, and 2,100 nm pulsed Ho:YAG laser. Perforation or full thickness necrosis of a portion of the vein wall was observed in 5/11 (45%), 0/11 (0%), 3/22 (14%), 7/11 (64%), 4/6 (67%), and 5/10 (50%) of cross-sections of veins treated with the 810 nm CW diode laser with a flat tip fiber, the 810 CW diode laser with a protected tip fiber, the 1,320 nm pulsed Nd:YAG laser, the 1,310 nm CW diode laser, the 1,470 nm CW diode laser, and the 2,100 nm pulsed Ho:YAG laser, respectively. Our results have shown that the delivery mode, pulsed Nd:YAG versus CW, may be just as important as the wavelength. Therefore, the 1,310 nm CW laser may not be equivalent to the 1,320 nm pulsed laser. In addition, protected 810 nm fibers may be less likely to yield wall perforations than their non-protected counterparts. Copyright © 2012 Wiley Periodicals, Inc.

Subelectron readout noise focal plane arrays for space imaging

NASA Astrophysics Data System (ADS)

Atlas, Gene; Wadsworth, Mark

2004-01-01

Readout noise levels of under 1 electron have long been a goal for the FPA community. In the quest to enhance the FPA sensitivity, various approaches have been attempted ranging from the exotic Photo-multiplier tubes, Image Intensifier tubes, Avalanche photo diodes, and now the on-chip avalanche charge amplification technologies from the CCD manufacturers. While these techniques reduce the readout noise, each offers a set of compromises that negatively affect the overall performance of the sensor in parameters such as power dissipation, dynamic range, uniformity or system complexity. In this work, we overview the benefits and tradeoffs of each approach, and introduce a new technique based on ImagerLabs" exclusive HIT technology which promises sub-electron read noise and other benefits without the tradeoffs of the other noise reduction techniques.

Thermionic noise measurements for on-line dispenser cathode diagnostics for linear beam microwave tubes

NASA Technical Reports Server (NTRS)

Holland, C.; Brodie, I.

1985-01-01

A test stand has been set up to measure the current fluctuation noise properties of B- and M-type dispenser cathodes in a typical TWT gun structure. Noise techniques were used to determine the work function distribution on the cathode surfaces. Significant differences between the B and M types and significant changes in the work function distribution during activation and life are found. In turn, knowledge of the expected work function can be used to accurately determine the cathode-operating temperatures in a TWT structure. Noise measurements also demonstrate more sensitivity to space charge effects than the Miram method. Full automation of the measurements and computations is now required to speed up data acquisition and reduction. The complete set of equations for the space charge limited diode were programmed so that given four of the five measurable variables (J, J sub O, T, D, and V) the fifth could be computed. Using this program, we estimated that an rms fluctuation in the diode spacing d in the frequency range of 145 Hz about 20 kHz of only about 10 to the -5 power A would account for the observed noise in a space charge limited diode with 1 mm spacing.

Spectral matching technology for light-emitting diode-based jaundice photodynamic therapy device

NASA Astrophysics Data System (ADS)

Gan, Ru-ting; Guo, Zhen-ning; Lin, Jie-ben

2015-02-01

The objective of this paper is to obtain the spectrum of light-emitting diode (LED)-based jaundice photodynamic therapy device (JPTD), the bilirubin absorption spectrum in vivo was regarded as target spectrum. According to the spectral constructing theory, a simple genetic algorithm as the spectral matching algorithm was first proposed in this study. The optimal combination ratios of LEDs were obtained, and the required LEDs number was then calculated. Meanwhile, the algorithm was compared with the existing spectral matching algorithms. The results show that this algorithm runs faster with higher efficiency, the switching time consumed is 2.06 s, and the fitting spectrum is very similar to the target spectrum with 98.15% matching degree. Thus, blue LED-based JPTD can replace traditional blue fluorescent tube, the spectral matching technology that has been put forward can be applied to the light source spectral matching for jaundice photodynamic therapy and other medical phototherapy.

Micro and nano devices in passive millimetre wave imaging systems

NASA Astrophysics Data System (ADS)

Appleby, R.

2013-06-01

The impact of micro and nano technology on millimetre wave imaging from the post war years to the present day is reviewed. In the 1950s whisker contacted diodes in mixers and vacuum tubes were used to realise both radiometers and radars but required considerable skill to realise the performance needed. Development of planar semiconductor devices such as Gunn and Schottky diodes revolutionised mixer performance and provided considerable improvement. The next major breakthrough was high frequency transistors based on gallium arsenide which were initially used at intermediate frequencies but later after further development at millimeter wave frequencies. More recently Monolithic Microwave Integrated circuits(MMICs) offer exceptional performance and the opportunity for innovative design in passive imaging systems. In the future the use of micro and nano technology will continue to drive system performance and we can expect to see integration of antennae, millimetre wave and sub millimetre wave circuits and signal processing.

Evaluation of an organic light-emitting diode display for precise visual stimulation.

PubMed

Ito, Hiroyuki; Ogawa, Masaki; Sunaga, Shoji

2013-06-11

A new type of visual display for presentation of a visual stimulus with high quality was assessed. The characteristics of an organic light-emitting diode (OLED) display (Sony PVM-2541, 24.5 in.; Sony Corporation, Tokyo, Japan) were measured in detail from the viewpoint of its applicability to visual psychophysics. We found the new display to be superior to other display types in terms of spatial uniformity, color gamut, and contrast ratio. Changes in the intensity of luminance were sharper on the OLED display than those on a liquid crystal display. Therefore, such OLED displays could replace conventional cathode ray tube displays in vision research for high quality stimulus presentation. Benefits of using OLED displays in vision research were especially apparent in the fields of low-level vision, where precise control and description of the stimulus are needed, e.g., in mesopic or scotopic vision, color vision, and motion perception.

Indwelling Stent Embedded with Light-Emitting Diodes for Photodynamic Therapy of Malignant Biliary Obstruction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Baran, Timothy M., E-mail: timothy.baran@rochester.edu; Mironov, Oleg, E-mail: oleg.mironov@uhn.ca; Sharma, Ashwani K., E-mail: Ashwani-Sharma@URMC.Rochester.edu

PurposeWe describe the design and preliminary characterization of a stent incorporating light-emitting diodes (LEDs) for photodynamic therapy (PDT) of malignant biliary obstruction.MethodsA prototype was constructed with red (640 nm) LEDs embedded in a 14.5 French polyurethane tube. The device was evaluated for optical power and subjected to physical and electrical tests. PDT-induced reactive oxygen species were imaged in a gel phantom.ResultsThe stent functioned at a 2.5-cm bend radius and illuminated for 6 months in saline. No stray currents were detected, and it was cool after 30 minutes of operation. Optical power of 5–15 mW is applicable to PDT. Imaging of a reactivemore » oxygen indicator showed LED-stent activation of photosensitizer.ConclusionsThe results motivate biological testing and design optimization.« less

Cost-Effective Live Cell Density Determination of Liquid Cultured Microorganisms.

PubMed

Kutschera, Alexander; Lamb, Jacob J

2018-02-01

Live monitoring of microorganisms growth in liquid medium is a desired parameter for many research fields. A wildly used approach for determining microbial liquid growth quantification is based on light scattering as the result of the physical interaction of light with microbial cells. These measurements are generally achieved using costly table-top instruments; however, a live, reliable, and straight forward instrument constructed using parts that are inexpensive may provide opportunities for many researchers. Here, such an instrument has been constructed and tested. It consists of modular test tube holding chambers, each with a low power monochromatic light-emitting diode, and a monolithic photodiode. A microcontroller connects to all modular chambers to control the diodes, and send the live data to either an LCD screen, or a computer. This work demonstrate that this modular instrument can determine precise cell concentrations for the bacteria Escherichia coli and Pseudomonas syringae pv. tomato DC3000, as well as Saccharomyces cerevisiae yeast.

Waterproof AlInGaP optoelectronics on stretchable substrates with applications in biomedicine and robotics.

PubMed

Kim, Rak-Hwan; Kim, Dae-Hyeong; Xiao, Jianliang; Kim, Bong Hoon; Park, Sang-Il; Panilaitis, Bruce; Ghaffari, Roozbeh; Yao, Jimin; Li, Ming; Liu, Zhuangjian; Malyarchuk, Viktor; Kim, Dae Gon; Le, An-Phong; Nuzzo, Ralph G; Kaplan, David L; Omenetto, Fiorenzo G; Huang, Yonggang; Kang, Zhan; Rogers, John A

2010-11-01

Inorganic light-emitting diodes and photodetectors represent important, established technologies for solid-state lighting, digital imaging and many other applications. Eliminating mechanical and geometrical design constraints imposed by the supporting semiconductor wafers can enable alternative uses in areas such as biomedicine and robotics. Here we describe systems that consist of arrays of interconnected, ultrathin inorganic light-emitting diodes and photodetectors configured in mechanically optimized layouts on unusual substrates. Light-emitting sutures, implantable sheets and illuminated plasmonic crystals that are compatible with complete immersion in biofluids illustrate the suitability of these technologies for use in biomedicine. Waterproof optical-proximity-sensor tapes capable of conformal integration on curved surfaces of gloves and thin, refractive-index monitors wrapped on tubing for intravenous delivery systems demonstrate possibilities in robotics and clinical medicine. These and related systems may create important, unconventional opportunities for optoelectronic devices.

Volume CT (VCT) enabled by a novel diode technology

NASA Astrophysics Data System (ADS)

Ikhlef, Aziz; Zeman, Greg; Hoffman, David; Li, Wen; Possin, George

2005-04-01

One of the results of the latest developments in x-ray tube and detector technology, is the enabling of computed tomography (CT) as a strong non-invasive imaging modality for a new set of clinical applications including cardiac and brain imaging. A common theme among the applications is an ability to have wide anatomical coverage in a single rotation. Large coverage in CT is expected to bring significant diagnostic value in clinical field, especially in cardiac, trauma, pediatric, neuro, angiography, Stroke WorkUp and pulmonary applications. This demand, in turn, creates a need for tile-able and scalable detector design. In this paper, we introduce the design of a new diode, a crucial part of the detector, discuss how it enables wide coverage, its performance in terms of cross-talk, light output response, maximized geometric efficiency, and other CT requirements, and compare it to the traditional design which is front-illuminated diode. We ran extensive simulation and measurement experiments to study the geometric efficiency and assess the cross talk and all other performance parameters Critical To Quality (CTQs) with both designs. We modeled x-ray scattering in the scintillator, light scattering through the septa and optical coupler, and electrical cross talk. We tested the design with phantoms and clinical experiments on a scanner (LightSpeed VCT, GE Healthcare Technologies, Waukesha, WI, USA). Our preliminary results indicate that the new diode design performs as well as the traditional in terms of cross talk and other CTQs. It, also, yields better geometric efficiency and enables tile-able detector design, which is crucial for the VCT. We introduced a new diode design, which is an essential enabler for VCT. We demonstrated the new design is superior to the traditional design for the clinically relevant performance measures.

Novel Coatings for Enhancement of Light-Emitting Diodes (LEDs)

DTIC Science & Technology

2006-10-28

quantum efficiency of LEDs. SAIC’s strength is this area is a proprietary nonimaging optics code. In consultation with Lumileds, SAIC developed designs for...five different optical ele- ments that collect and project light from a LED. The simulations showed that the designs achieve a significant improvement... optical microscope at 100x power the coating is not visible. Fire sample 6DecO4P1 in tube furnace As a first test, sample 6Dec04P1 was progressively

DIFFERENTIAL FAULT SENSING CIRCUIT

DOEpatents

Roberts, J.H.

1961-09-01

A differential fault sensing circuit is designed for detecting arcing in high-voltage vacuum tubes arranged in parallel. A circuit is provided which senses differences in voltages appearing between corresponding elements likely to fault. Sensitivity of the circuit is adjusted to some level above which arcing will cause detectable differences in voltage. For particular corresponding elements, a group of pulse transformers are connected in parallel with diodes connected across the secondaries thereof so that only voltage excursions are transmitted to a thyratron which is biased to the sensitivity level mentioned.

Photodynamic therapy to destroy pneumonia associated microorganisms using external irradiation source

NASA Astrophysics Data System (ADS)

Bassi, Rosane; Myakawa, Walter; Navarro, Ricardo S.; Baptista, Alessandra; Ribeiro, Martha Simões; Nunez, Silvia Cristina

2018-02-01

An endotracheal tube (ETT) is required for the management of critically ill, mechanically ventilated patients. Ventilatorassociated pneumonia (VAP) affects patients hospitalized in intensive care units; its risk of occurrence is 1% to up 3% for each day of mechanical ventilation. The polymicrobial nature of VAP is established with mixed bacterial-fungal biofilms colonizing the ETT. The microbial interaction enhances the microbial pathogenesis contributing to high indexes of morbidity/mortality. Antimicrobial Photodynamic Therapy (aPDT) could be a suitable therapy for decontamination of oral cavity and ETT at the same time, but the use of a fiber optics inside the ETT seems to not be appropriated since a cannula for secretion aspiration has to be introduced into the ETT to keep it's lumen. The aim of this study is to proof the concept that an external light source from a LED is capable of reach all areas of the ETT. We use a commercial ETT, 60μM methylene blue (MB), and a 660nm diode laser and calculated the transmission coefficient of light in different situations as only tube, tube with biofilm and biofilm+MB. The results prove that is possible to transmit light through the tube even in the presence of MB and biofilm although a high attenuation of about 60% was measured depending on the tested condition.

Albumin testing in urine using a smart-phone

PubMed Central

Coskun, Ahmet F.; Nagi, Richie; Sadeghi, Kayvon; Phillips, Stephen; Ozcan, Aydogan

2013-01-01

We demonstrate a digital sensing platform, termed Albumin Tester, running on a smart-phone that images and automatically analyses fluorescent assays confined within disposable test tubes for sensitive and specific detection of albumin in urine. This light-weight and compact Albumin Tester attachment, weighing approximately 148 grams, is mechanically installed on the existing camera unit of a smart-phone, where test and control tubes are inserted from the side and are excited by a battery powered laser diode. This excitation beam, after probing the sample of interest located within the test tube, interacts with the control tube, and the resulting fluorescent emission is collected perpendicular to the direction of the excitation, where the cellphone camera captures the images of the fluorescent tubes through the use of an external plastic lens that is inserted between the sample and the camera lens. The acquired fluorescent images of the sample and control tubes are digitally processed within one second through an Android application running on the same cellphone for quantification of albumin concentration in urine specimen of interest. Using a simple sample preparation approach which takes ~ 5 minutes per test (including the incubation time), we experimentally confirmed the detection limit of our sensing platform as 5–10 μg/mL (which is more than 3 times lower than clinically accepted normal range) in buffer as well as urine samples. This automated albumin testing tool running on a smart-phone could be useful for early diagnosis of kidney disease or for monitoring of chronic patients, especially those suffering from diabetes, hypertension, and/or cardiovascular diseases. PMID:23995895

A vacuum-sealed, gigawatt-class, repetitively pulsed high-power microwave source

NASA Astrophysics Data System (ADS)

Xun, Tao; Fan, Yu-wei; Yang, Han-wu; Zhang, Zi-cheng; Chen, Dong-qun; Zhang, Jian-de

2017-06-01

A compact L-band sealed-tube magnetically insulated transmission line oscillator (MILO) has been developed that does not require bulky external vacuum pump for repetitive operations. This device with a ceramic insulated vacuum interface, a carbon fiber array cathode, and non-evaporable getters has a base vacuum pressure in the low 10-6 Pa range. A dynamic 3-D Monte-Carlo model for the molecular flow movement and collision was setup for the MILO chamber. The pulse desorption, gas evolution, and pressure distribution were exactly simulated. In the 5 Hz repetition rate experiments, using a 600 kV diode voltage and 48 kA beam current, the average radiated microwave power for 25 shots is about 3.4 GW in 45 ns pulse duration. The maximum equilibrium pressure is below 4.0 × 10-2 Pa, and no pulse shortening limitations are observed during the repetitive test in the sealed-tube condition.

Temperature stability of transit time delay for a single-mode fibre in a loose tube cable

NASA Technical Reports Server (NTRS)

Bergman, L. A.; Eng, S. T.; Johnston, A. R.

1983-01-01

The effect of temperature on the transit-time delay of a loose-tube-type single-mode optical-fiber cable is investigated experimentally. A 1058-m length of cable was placed loosely coiled in an oven and used to connect a 820-nm single-mode laser diode to a high-speed avalanche-photodiode detector feeding a vector voltmeter; the signal was provided by a high-stability frequency-synthesized generator. Measurements were made every 2 C from -50 to 60 C and compared to those obtained with a 200-m lacquered bare fiber. The phase change of both fibers varied with temperature at a positive slope of 6-7 ppm/C. This value is significantly better than those reported for other cable types, suggesting the application of loose-fiber cables to long-haul gigabit digital transmissions or precision time-base distribution for VLBI.

Preparation of conductive gold nanowires in confined environment of gold-filled polymer nanotubes.

PubMed

Mitschang, Fabian; Langner, Markus; Vieker, Henning; Beyer, André; Greiner, Andreas

2015-02-01

Continuous conductive gold nanofibers are prepared via the "tubes by fiber templates" process. First, poly(l-lactide) (PLLA)-stabilized gold nanoparticles (AuNP) with over 60 wt% gold are synthesized and characterized, including gel permeation chromatography coupled with a diode array detector. Subsequent electrospinning of these AuNP with template PLLA results in composite nanofibers featuring a high gold content of 57 wt%. Highly homogeneous gold nanowires are obtained after chemical vapor deposition of 345 nm of poly(p-xylylene) (PPX) onto the composite fibers followed by pyrolysis of the polymers at 1050 °C. The corresponding heat-induced transition from continuous gold-loaded polymer tubes to smooth gold nanofibers is studied by transmission electron microscopy and helium ion microscopy using both secondary electrons and Rutherford backscattered ions. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Flat panel displays in the helmet-mounted display

NASA Astrophysics Data System (ADS)

Bartlett, Christopher T.; Freeman, Jonathan P.

2002-08-01

The Helmet Mounted Display has been in development for over 25 years and with few exceptions those systems in service have incorporated a miniature Cathode Ray Tube as the display source. The exceptions have been the use of Light Emitting Diodes in Helmet Sighting displays. The argument for Flat Panel Displays has been well rehearsed and this paper provides a summary of the available technologies but with a rationale for a decision to use Reflective Liquid Crystal devices. The Paper then describes sources of illumination and derives the luminance required from that source.

Bonding Diamond To Metal In Electronic Circuits

NASA Technical Reports Server (NTRS)

Jacquez, Andrew E.

1993-01-01

Improved technique for bonding diamond to metal evolved from older technique of soldering or brazing and more suitable for fabrication of delicate electronic circuits. Involves diffusion bonding, developed to take advantage of electrically insulating, heat-conducting properties of diamond, using small diamond bars as supports for slow-wave transmission-line structures in traveling-wave-tube microwave amplifiers. No fillets or side coats formed because metal bonding strips not melted. Technique also used to mount such devices as transistors and diodes electrically insulated from, but thermally connected to, heat sinks.

High Thermal Rectifications Using Liquid Crystals Confined into a Conical Frustum

NASA Astrophysics Data System (ADS)

Silva, José Guilherme; Fumeron, Sébastien; Moraes, Fernando; Pereira, Erms

2018-05-01

In recent years, phononics, that studies thermal analogs of electronic devices, has become an important subject due to the need for better use of energy resources influenced by growing demand. On developing of these analogs, for example, thermal diodes, a successful route is the design of nanostructured materials (e.g., carbon nanotubes). However, these materials entail increased costs due to the use of complex techniques/equipments, while alternative cheaper materials present nearly comparable efficiency. In this work, we investigate how a thermal diode made by an alternative material (nematic liquid crystal), confined in a conical frustum capillary, can be optimized to achieve high rectifications. In such capillary tube, the thermotropic nematic liquid crystal 5CB produces an axially anisotropic defect called escaped radial disclination. With the molecular director field of such structure, we obtain the thermal conductivity tensor of the diode and solve the steady-state regime of Laplace and Fourier equations using the finite element method. We observed the anisotropy of the system with the non-linear temperature dependences of the molecular thermal conductivities that rectify the heat flux at rates up to 1266% at room temperature. Studying the sensitivity of the system with respect to shape and molecular and thermal aspects, we found that the improved thermal diode is suitable to be miniaturized and applied on well-determined areas, and it is robust against variations of the inward pumped heat flux. This work contributes to the usage of liquid crystals in non-display devices, having potential applications on controlling the heat flux through surfaces.

Compact lidar system using laser diode, binary continuous wave power modulation, and an avalanche photodiode-based receiver controlled by a digital signal processor

NASA Astrophysics Data System (ADS)

Ardanuy, Antoni; Comerón, Adolfo

2018-04-01

We analyze the practical limits of a lidar system based on the use of a laser diode, random binary continuous wave power modulation, and an avalanche photodiode (APD)-based photereceiver, combined with the control and computing power of the digital signal processors (DSP) currently available. The target is to design a compact portable lidar system made all in semiconductor technology, with a low-power demand and an easy configuration of the system, allowing change in some of its features through software. Unlike many prior works, we emphasize the use of APDs instead of photomultiplier tubes to detect the return signal and the application of the system to measure not only hard targets, but also medium-range aerosols and clouds. We have developed an experimental prototype to evaluate the behavior of the system under different environmental conditions. Experimental results provided by the prototype are presented and discussed.

New closed tube loop mediated isothermal amplification assay for prevention of product cross-contamination

PubMed Central

Karthik, K.; Rathore, Rajesh; Thomas, Prasad; Arun, T.R.; Viswas, K.N.; Dhama, Kuldeep; Agarwal, R.K.

2014-01-01

Loop mediated isothermal amplification (LAMP) assay, a promising diagnostic test, has been developed for detection of different pathogens of human as well as animals. Various positive points support its use as a field level test but the major problem is product cross contamination leading to false positive results. Different methods were adopted by various researchers to control this false positive amplification due to cross contamination but all have their own advantages and disadvantages. A new closed tube LAMP assay based on agar dye capsule was developed in the present study and this technique has some advantages over the other closed tube technique.•Agar at the concentration of 1.5% was used to sandwich SYBR green dye I with the aid of intradermal syringe. This agar dye capsule was placed over the LAMP reaction mixture before it was amplified.•To eliminate the hazardous nature of Ultra Violet (UV) light during result visualization of LAMP products, the present study demonstrates the use of Light Emitting Diode (LED) lights for result visualization.•LAMP was carried out for Brucella species detection using this modified techniques yielding good results without any cross contamination and LED showed similar fluorescence compared to UV. PMID:26150945

New closed tube loop mediated isothermal amplification assay for prevention of product cross-contamination.

PubMed

Karthik, K; Rathore, Rajesh; Thomas, Prasad; Arun, T R; Viswas, K N; Dhama, Kuldeep; Agarwal, R K

2014-01-01

Loop mediated isothermal amplification (LAMP) assay, a promising diagnostic test, has been developed for detection of different pathogens of human as well as animals. Various positive points support its use as a field level test but the major problem is product cross contamination leading to false positive results. Different methods were adopted by various researchers to control this false positive amplification due to cross contamination but all have their own advantages and disadvantages. A new closed tube LAMP assay based on agar dye capsule was developed in the present study and this technique has some advantages over the other closed tube technique.•Agar at the concentration of 1.5% was used to sandwich SYBR green dye I with the aid of intradermal syringe. This agar dye capsule was placed over the LAMP reaction mixture before it was amplified.•To eliminate the hazardous nature of Ultra Violet (UV) light during result visualization of LAMP products, the present study demonstrates the use of Light Emitting Diode (LED) lights for result visualization.•LAMP was carried out for Brucella species detection using this modified techniques yielding good results without any cross contamination and LED showed similar fluorescence compared to UV.

Diode laser myringotomy for chronic otitis media with effusion in adults.

PubMed

Zanetti, Diego; Piccioni, Michela; Nassif, Nader; Campovecchi, Chiara; Redaelli de Zinis, Luca O

2005-01-01

To analyze the closure time of diode laser-assisted myringotomies, the incidence of complications, and the hearing results in comparison with the "cold" procedure in adults with otitis media with effusion (OME). Prospective case-control study. Tertiary referral center, university hospital. Twenty-eight adult patients (39 ears), 13 men and 15 women, age 13 to 76 years (mean, 51.9). Inclusion criteria included 3 months (or more) history of OME resistant to medical therapy. Twenty-two control patients (34 ears) underwent cold myringotomies with knife and ventilation tubes (VT). Diode laser myringotomy performed in an office setting under local anesthesia with topical EMLA ointment. Timing of closure of the myringotomy, hearing results, incidence of complications, recurrence of OME. No intra- or postoperative pain nor complications were observed. Otomicroscopic daily monitoring documented the healing patterns of the tympanostomies, which remained patent for 7 to 25 days (average, 15.6 +/- 4.8 days). Immediate improvement of hearing was achieved in every patient. Recurrence of OME was observed in 36 ears (92.3%) within 1 month from healing. In the control group with VTs, healing of the eardrum was observed between 126 and 301 days (average, 183.2 +/- 44.8 days), and recurrence of OME was observed in 8 ears (23.5%) (p < 0.001). One month after healing, the air-bone gap was retained within 10 dB in 10.3% (4/39) of the diode laser group and in 50% (17/34) of the standard procedure group (p=0.0001). Diode laser myringotomy is a straightforward, painless procedure simplified by the thin fiberoptic cables available. Functional benefit is comparable to conventional tympanostomies plus VTs, but the duration of patency is too short to achieve long-term clearance of the effusion in "glue" ears of adult patients. Selected indications could be acute or recurrent otitis media or the prevention of barotraumas in tubal dysfunction.

Laser induced fluorescence in Ar and He plasmas with a tunable diode laser

NASA Astrophysics Data System (ADS)

Boivin, R. F.; Scime, E. E.

2003-10-01

A diode laser based laser induced fluorescence (LIF) diagnostic that uses an inexpensive diode laser system is described. This LIF diagnostic has been developed on the hot helicon experiment (HELIX) plasma device. The same diode laser is used to alternatively pump Ar II and He I transitions to obtain argon ion and atomic helium temperatures, respectively. The 1.5 MHz bandwidth diode laser has a Littrow external cavity with a mode-hop free tuning range up to 14 GHz (≈0.021 nm) and a total power output of about 12 mW. Wavelength scanning is achieved by varying the voltage on a piezoelectric controlled grating located within the laser cavity. The fluorescence radiation is monitored with a photomultiplier detector. A narrow band interference filter is used to eliminate all but the plasma radiation in the immediate vicinity of the fluorescence wavelength. Lock-in amplification is used to isolate the fluorescence signal from noise and electron-impact induced radiation. For the Ar ion, the laser tuned at 668.43 nm is used to pump the 3d 4F7/2 Ar II metastable level to the 4p 4D5/2 level. The 442.60 nm fluorescence radiation between the 4p 4D5/2 and the 4s 4P3/2 levels is captured by the photomultiplier tube. For atomic He, the laser is tuned at 667.82 nm to pump a fraction of the electron population from the 21P state to the 31D upper level. Although the 21P level is not a metastable, the close proximity of 21S metastable makes this new He I LIF scheme possible. In this scheme, a fraction of the laser-excited electrons undergo collisional excitation transfer from the 31D to the 31P level. In turn, the 31P state decays to the metastable 21S by emitting 501.57 nm fluorescence photons.

Near-infrared diode laser absorption sensor for rapid measurements of temperature and water vapor in a shock tube

NASA Astrophysics Data System (ADS)

Li, H.; Farooq, A.; Jeffries, J. B.; Hanson, R. K.

2007-11-01

A fast-response (100 kHz) tunable diode laser absorption sensor is developed for measurements of temperature and H2O concentration in shock tubes, e.g. for studies of combustion chemistry. Gas temperature is determined from the ratio of fixed-wavelength laser absorption of two H2O transitions near 7185.60 cm-1 and 7154.35 cm-1, which are selected using design rules for the target temperature range of 1000-2000 K and pressure range of 1-2 atm. Wavelength modulation spectroscopy is employed with second-harmonic detection (WMS-2f) to improve the sensor sensitivity and accuracy. Normalization of the second-harmonic signal by the first-harmonic signal is used to remove the need for calibration and minimize interference from emission, scattering, beam steering, and window fouling. The laser modulation depth for each H2O transition is optimized to maximize the WMS-2f signal for the target test conditions. The WMS-2f sensor is first validated in mixtures of H2O and Ar in a heated cell for the temperature range of 500-1200 K (P=1 atm), yielding an accuracy of 1.9% for temperature and 1.4% for H2O concentration measurements. Shock wave tests with non-reactive H2O-Ar mixtures are then conducted to demonstrate the sensor accuracy (1.5% for temperature and 1.4% for H2O concentration) and response time at higher temperatures (1200-1700 K, P=1.3-1.6 atm).

Intense X-ray machine for penetrating radiography

NASA Astrophysics Data System (ADS)

Lucht, Roy A.; Eckhouse, Shimon

Penetrating radiography has been used for many years in the nuclear weapons research programs. Infrequently penetrating radiography has been used in conventional weapons research programs. For example the Los Alamos PHERMEX machine was used to view uranium rods penetrating steel for the GAU-8 program, and the Ector machine was used to see low density regions in forming metal jets. The armor/anti-armor program at Los Alamos has created a need for an intense flash X-ray machine that can be dedicated to conventional weapons research. The Balanced Technology Initiative, through DARPA, has funded the design and construction of such a machine at Los Alamos. It will be an 8- to 10-MeV diode machine capable of delivering a dose of 500 R at 1 m with a spot size of less than 5 mm. The machine used an 87.5-stage low inductance Marx generator that charges up a 7.4-(Omega), 32-ns water line. The water line is discharged through a self-breakdown oil switch into a 12.4-(Omega) water line that rings up the voltage into the high impendance X-ray diode. A long (233-cm) vacuum drift tube is used to separate the large diameter oil-insulated diode region from the X-ray source area that may be exposed to high overpressures by the explosive experiments. The electron beam is selffocused at the target area using a low pressure background gas.

Transcanalicular Diode Laser-assisted Dacryocystorhinostomy for the Treatment of Primary Acquired Nasolacrimal Duct Obstruction.

PubMed

Mor, Joel M; Guo, Yongwei; Koch, Konrad R; Heindl, Ludwig M

2017-10-13

Today's gold standard in the treatment of infrasaccal primary acquired nasolacrimal duct obstruction (PANDO) is external dacryocystorhinostomy (DCR), a relatively invasive procedure that can be performed after failure of recanalizing treatments. However, with progress in the field of diode laser technology, new approaches have emerged. Laser-assisted transcanalicular DCR with subsequent bicanalicular silicon intubation is a new option showing great promise as a viable minimally invasive procedure. Under permanent endoscopic visual control from the nasal cavity, a diode laser fiber is inserted into the lacrimal sac and laser energy is applied to create a bony ostium between the lacrimal sac and the nasal cavity. Since no skin incision needs to be made, advantages of this method comprise the sparing of the skin as well as the medial palpebral structures and the physiological palpebral-canalicular pump mechanism. The duration of surgery as well as reconvalescence is generally shorter than with external DCR. Complications include silicon tube prolapse, mild swelling and, rarely, canalicular infection and thermal injury. One-year functional success rates, defined as complete resolution of symptoms and ostium patency, are high, yet still range behind those of external DCR. However, secondary external DCR after failure of laser-assisted DCR can be performed without difficulty. Thus, laser-assisted transcanalicular DCR is a valid option that should be considered as a second-step procedure after failure of recanalization procedures and before external DCR.

A handheld laser-induced fluorescence detector for multiple applications.

PubMed

Fang, Xiao-Xia; Li, Han-Yang; Fang, Pan; Pan, Jian-Zhang; Fang, Qun

2016-04-01

In this paper, we present a compact handheld laser-induced fluorescence (LIF) detector based on a 450 nm laser diode and quasi-confocal optical configuration with a total size of 9.1 × 6.2 × 4.1 cm(3). Since there are few reports on the use of 450 nm laser diode in LIF detection, especially in miniaturized LIF detector, we systematically investigated various optical arrangements suitable for the requirements of 450 nm laser diode and system miniaturization, including focusing lens, filter combination, and pinhole, as well as Raman effect of water at 450 nm excitation wavelength. As the result, the handheld LIF detector integrates the light source (450 nm laser diode), optical circuit module (including a 450 nm band-pass filter, a dichroic mirror, a collimating lens, a 525 nm band-pass filter, and a 1.0mm aperture), optical detector (miniaturized photomultiplier tube), as well as electronic module (including signal recording, processing and displaying units). This detector is capable of working independently with a cost of ca. $2000 for the whole instrument. The detection limit of the instrument for sodium fluorescein solution is 0.42 nM (S/N=3). The broad applicability of the present system was demonstrated in capillary electrophoresis separation of fluorescein isothiocyanate (FITC) labeled amino acids and in flow cytometry of tumor cells as an on-line LIF detector, as well as in droplet array chip analysis as a LIF scanner. We expect such a compact LIF detector could be applied in flow analysis systems as an on-line detector, and in field analysis and biosensor analysis as a portable universal LIF detector. Copyright © 2015 Elsevier B.V. All rights reserved.

Sensitive detection of temperature behind reflected shock waves using wavelength modulation spectroscopy of CO2 near 2.7 μm

NASA Astrophysics Data System (ADS)

Farooq, A.; Jeffries, J. B.; Hanson, R. K.

2009-07-01

Tunable diode-laser absorption of CO2 near 2.7 μm incorporating wavelength modulation spectroscopy with second-harmonic detection (WMS-2f) is used to provide a new sensor for sensitive and accurate measurement of the temperature behind reflected shock waves in a shock-tube. The temperature is inferred from the ratio of 2f signals for two selected absorption transitions, at 3633.08 and 3645.56 cm-1, belonging to the ν 1+ ν 3 combination vibrational band of CO2 near 2.7 μm. The modulation depths of 0.078 and 0.063 cm-1 are optimized for the target conditions of the shock-heated gases ( P˜1-2 atm, T˜800-1600 K). The sensor is designed to achieve a high sensitivity to the temperature and a low sensitivity to cold boundary-layer effects and any changes in gas pressure or composition. The fixed-wavelength WMS-2f sensor is tested for temperature and CO2 concentration measurements in a heated static cell (600-1200 K) and in non-reactive shock-tube experiments (900-1700 K) using CO2-Ar mixtures. The relatively large CO2 absorption strength near 2.7 μm and the use of a WMS-2f strategy minimizes noise and enables measurements with lower concentration, higher accuracy, better sensitivity and improved signal-to-noise ratio (SNR) relative to earlier work, using transitions in the 1.5 and 2.0 μm CO2 combination bands. The standard deviation of the measured temperature histories behind reflected shock waves is less than 0.5%. The temperature sensor is also demonstrated in reactive shock-tube experiments of n-heptane oxidation. Seeding of relatively inert CO2 in the initial fuel-oxidizer mixture is utilized to enable measurements of the pre-ignition temperature profiles. To our knowledge, this work represents the first application of wavelength modulation spectroscopy to this new class of diode lasers near 2.7 μm.

Potential for heavy metal (copper and zinc) removal from contaminated marine sediments using microalgae and light emitting diodes

NASA Astrophysics Data System (ADS)

Kwon, Hyeong Kyu; Jeon, Jin Young; Oh, Seok Jin

2017-03-01

The effects of monochromatic (blue, yellow and red LED) and mixed wavelengths (fluorescent lamp) on the adsorption and absorption of Cu and Zn by Phaeodactylum tricornutum, Nitzschia sp., Skeletonema sp., and Chlorella vulgaris were investigated. In addition, we confirmed the potential of microalgae for phytoremediation of these heavy metals from contaminated marine sediment by using microcosm experiments that incorporated LEDs and semipermeable membrane (SPM) tube containing microalgae. Among the four microalgae, C. vulgaris grown under red LED exhibited the highest Cu and Zn removal with values of 17.5 × 10-15 g Cu/cell and 38.3 × 10-15 g Zn/cell, respectively. Thus, C. vulgaris could be a useful species for phytoremediation. In the microcosm experiments with SPM containing C. vulgaris, the highest Cu and Zn removal from sediment and interstitial water showed under red LED. Therefore, phytoremediation using LED and SPM tube containing microalgae could be utilized as an eco-friendly technique for remediating contaminated marine sediment.

Hollow-core fiber sensing technique for pipeline leak detection

NASA Astrophysics Data System (ADS)

Challener, W. A.; Kasten, Matthias A.; Karp, Jason; Choudhury, Niloy

2018-02-01

Recently there has been increased interest on the part of federal and state regulators to detect and quantify emissions of methane, an important greenhouse gas, from various parts of the oil and gas infrastructure including well pads and pipelines. Pressure and/or flow anomalies are typically used to detect leaks along natural gas pipelines, but are generally very insensitive and subject to false alarms. We have developed a system to detect and localize methane leaks along gas pipelines that is an order of magnitude more sensitive by combining tunable diode laser spectroscopy (TDLAS) with conventional sensor tube technology. This technique can potentially localize leaks along pipelines up to 100 km lengths with an accuracy of +/-50 m or less. A sensor tube buried along the pipeline with a gas-permeable membrane collects leaking gas during a soak period. The leak plume within the tube is then carried to the nearest sensor node along the tube in a purge cycle. The time-to-detection is used to determine leak location. Multiple sensor nodes are situated along the pipeline to minimize the time to detection, and each node is composed of a short segment of hollow core fiber (HCF) into which leaking gas is transported quickly through a small pressure differential. The HCF sensing node is spliced to standard telecom solid core fiber which transports the laser light for spectroscopy to a remote interrogator. The interrogator is multiplexed across the sensor nodes to minimize equipment cost and complexity.

High-durability surface-discharge flash x-ray tube driven by a two-stage Marx pulser

NASA Astrophysics Data System (ADS)

Shikoda, Arimitsu; Sato, Eiichi; Kimura, Shingo; Oizumi, Teiji; Tamakawa, Yoshiharu; Yanagisawa, Toru

1993-02-01

We developed a high-durability flash x-ray tube with a plate-shaped ferrite cathode for the use in the field of biomedical engineering and technology. The surface-discharge cathode was very useful for generating stable flash x rays. This flash x-ray generator consisted of the following essential components: a high-voltage power supply, an energy-storage condenser of 97 nF, a two-stage Marx type pulser, an oil diffusion pump, and a flash x-ray tube. This x-ray tube was of a diode which was connected to the turbo molecular pump and had plate-shaped anode and cathode electrodes. The cathode electrode was made of ferrite, and its edge was covered with a thin gold film by means of the spattering in order to decrease contact resistance. The space between the anode and cathode electrodes could be regulated from the outside of the x-ray rube. The two condensers in Marx circuit were charged from 50 to 70 kV by a power supply, and the condensers were connected in series after closing a gap switch. Thus the maximum output voltages from the pulser were about two times the charged voltages. In this experiment, the maximum tube voltage and the current were about 110 kV and 0.8 kA, respectively. The pulse widths were less than 140 ns, and the maximum x-ray intensity was 1.27 (mu) C/kg at 0.5 m per pulse. The size of the focal spot and the maximum repetition rate were about 2 X 2.5 mm and 50 Hz (fps), respectively.

Time-resolved magnetic spectrometer measurements of the SABRE positive polarity magnetically insulated transmission line voltage

DOE Office of Scientific and Technical Information (OSTI.GOV)

Menge, P.R.; Cuneo, M.E.; Hanson, D.L.

A magnetic spectrometer has been fielded on the coaxial magnetically insulated transmission line (MITL) of the SABRE ten-cavity inductive voltage adder operated in positive polarity (6 MV, 300 kA, 50 ns). Located 1 m upstream from an extraction ion diode, this diagnostic is capable of measuring the SABRE voltage pulse with a 2 ns resolution. Ions (protons and carbon) from either a flashover or plasma gun source are accelerated from the inner anode across the gap to the outer cathode and into a drift tube terminated by the magnetic spectrometer. The magnetically deflected ions are recorded on up to sixteenmore » PIN diodes (diameter = 1 mm, thickness = 35 {mu}). The voltage waveform is produced from the time-of-flight information. Results confirm previous observations of a vacuum wave precursor separated from the magnetically insulated wave. Verification of upstream precursor erosion techniques are possible with this instrument. Measurements of peak voltage show good agreement with other time-integrated voltage diagnostics. Comparisons with theoretical voltage predictions derived from a flow impedance model of MITL behavior will be presented.« less

Measurement of gas viscosity using photonic crystal fiber

NASA Astrophysics Data System (ADS)

Gao, R.-K.; Sheehe, S. L.; Kurtz, J.; O'Byrne, S.

2016-11-01

A new measurement technique for gas viscosity coefficient is designed and demonstrated using the technique of tunable diode laser absorption spectroscopy (TDLAS). Gas flow is driven by a pressure gradient between two gas cells, through a photonic crystal fiber (PCF) surrounded by a furnace for temperature adjustment. PCF with 20-micron diameter affords physical space for gas-light interaction and provides a basis for gas viscosity measurement by determining the time for flow to exit a capillary tube under the influence of a pressure gradient. Infrared radiation from a diode laser is coupled into the fiber to be guided through the gas, and the light attenuation due to absorption from the molecular absorbing species is measured by a photo detector placed at the exit of the fiber. A numerical model from Sharipov and Graur describing local number density distribution in a unsteady state is applied for the determination of gas viscosity, based on the number density of gas measured by the absorption of the laser light, using the Beer-Lambert law. The measurement system is confirmed by measuring the viscosity of CO2 as a reference gas.

First attempt of at-cavity cryogenic X-ray detection in a CEBAF cryomodule for field emission monitoring

DOE Office of Scientific and Technical Information (OSTI.GOV)

Geng, Rongli; Daly, Edward; Drury, Michael

2015-09-01

We report on the first result of at-cavity X-ray detection in a CEBAF cryomodule for field emission monitoring. In the 8-cavity cryomodule F100, two silicon diodes were installed near the end flange of each cavity. Each cavity was individually tested during the cryomodule test in JLab’s cryomodule test facility. The behaviors of these at-cavity cryogenic X-ray detectors were compared with those of the standard ‘in air’ Geiger-Muller (G-M) tubes. Our initial experiments establish correlation between X-ray response of near diodes and the field emission source cavity in the 8-cavity string. For two out of these eight cavities, we also carriedmore » out at-cavity X-ray detection experiment during their vertical testing. The aim is to track field emission behavior uniquely from vertical cavity testing to horizontal cavity testing in the cryomodule. These preliminary results confirmed our expectation and warrant further effort toward the establishment of permanent at-cavity cryogenic X-ray detection for SRF development and operation.« less

Simple and Versatile Turbidimetric Monitoring of Bacterial Growth in Liquid Cultures Using a Customized 3D Printed Culture Tube Holder and a Miniaturized Spectrophotometer: Application to Facultative and Strictly Anaerobic Bacteria.

PubMed

Maia, Margarida R G; Marques, Sara; Cabrita, Ana R J; Wallace, R John; Thompson, Gertrude; Fonseca, António J M; Oliveira, Hugo M

2016-01-01

Here we introduce a novel strategy for turbidimetric monitoring of bacterial growth in liquid culture. The instrumentation comprises a light source, a customized 3D printed culture tube holder and a miniaturized spectrophotometer, connected through optical cables. Due to its small footprint and the possibility to operate with external light, bacterial growth was directly monitored from culture tubes in a simple and versatile fashion. This new portable measurement technique was used to monitor the growth of facultative (Escherichia coli ATCC/25922, and Staphylococcus aureus ATCC/29213) and strictly (Butyrivibrio fibrisolvens JW11, Butyrivibrio proteoclasticus P18, and Propionibacterium acnes DSMZ 1897) anaerobic bacteria. For E. coli and S. aureus, the growth rates calculated from normalized optical density values were compared with those ones obtained using a benchtop spectrophotometer without significant differences (P = 0.256). For the strictly anaerobic species, a high precision (relative standard deviation < 3.5%) was observed between replicates up to 48 h. Regarding its potential for customization, this manifold could accommodate further developments for customized turbidimetric monitoring, such as the use of light-emitting diodes as a light source or flow cells.

Simple and Versatile Turbidimetric Monitoring of Bacterial Growth in Liquid Cultures Using a Customized 3D Printed Culture Tube Holder and a Miniaturized Spectrophotometer: Application to Facultative and Strictly Anaerobic Bacteria

PubMed Central

Maia, Margarida R. G.; Marques, Sara; Cabrita, Ana R. J.; Wallace, R. John; Thompson, Gertrude; Fonseca, António J. M.; Oliveira, Hugo M.

2016-01-01

Here we introduce a novel strategy for turbidimetric monitoring of bacterial growth in liquid culture. The instrumentation comprises a light source, a customized 3D printed culture tube holder and a miniaturized spectrophotometer, connected through optical cables. Due to its small footprint and the possibility to operate with external light, bacterial growth was directly monitored from culture tubes in a simple and versatile fashion. This new portable measurement technique was used to monitor the growth of facultative (Escherichia coli ATCC/25922, and Staphylococcus aureus ATCC/29213) and strictly (Butyrivibrio fibrisolvens JW11, Butyrivibrio proteoclasticus P18, and Propionibacterium acnes DSMZ 1897) anaerobic bacteria. For E. coli and S. aureus, the growth rates calculated from normalized optical density values were compared with those ones obtained using a benchtop spectrophotometer without significant differences (P = 0.256). For the strictly anaerobic species, a high precision (relative standard deviation < 3.5%) was observed between replicates up to 48 h. Regarding its potential for customization, this manifold could accommodate further developments for customized turbidimetric monitoring, such as the use of light-emitting diodes as a light source or flow cells. PMID:27630632

A sustainable on-line CapLC method for quantifying antifouling agents like irgarol-1051 and diuron in water samples: Estimation of the carbon footprint.

PubMed

Pla-Tolós, J; Serra-Mora, P; Hakobyan, L; Molins-Legua, C; Moliner-Martinez, Y; Campins-Falcó, P

2016-11-01

In this work, in-tube solid phase microextraction (in-tube SPME) coupled to capillary LC (CapLC) with diode array detection has been reported, for on-line extraction and enrichment of booster biocides (irgarol-1051 and diuron) included in Water Frame Directive 2013/39/UE (WFD). The analytical performance has been successfully demonstrated. Furthermore, in the present work, the environmental friendliness of the procedure has been quantified by means of the implementation of the carbon footprint calculation of the analytical procedure and the comparison with other methodologies previously reported. Under the optimum conditions, the method presents good linearity over the range assayed, 0.05-10μg/L for irgarol-1051 and 0.7-10μg/L for diuron. The LODs were 0.015μg/L and 0.2μg/L for irgarol-1051 and diuron, respectively. Precision was also satisfactory (relative standard deviation, RSD<3.5%). The proposed methodology was applied to monitor water samples, taking into account the EQS standards for these compounds. The carbon footprint values for the proposed procedure consolidate the operational efficiency (analytical and environmental performance) of in-tube SPME-CapLC-DAD, in general, and in particular for determining irgarol-1051 and diuron in water samples. Copyright © 2016 Elsevier B.V. All rights reserved.

Temperature sensing in shock-heated evaporating aerosol using wavelength-modulation absorption spectroscopy of CO2 near 2.7 µm

NASA Astrophysics Data System (ADS)

Ren, Wei; Jeffries, Jay B.; Hanson, Ronald K.

2010-10-01

A tunable diode laser sensor with a detection bandwidth of 40 kHz is developed for measuring the time-varying gas temperature of CO2 during the evaporation of shock-heated hydrocarbon fuel aerosol. Normalized wavelength-modulation spectroscopy with second-harmonic detection (WMS-2f/1f) is used to probe R(28) and P(70) transitions in the ν1 + ν3 combination band of CO2 near 2.7 µm. The fixed-center-wavelength WMS sensor was first validated in a shock tube with non-reactive CO2/Ar gas mixtures, yielding an accuracy of better than 1.5% over the entire range of 650-1500 K. The sensor was then evaluated in a well-controlled aerosol flow cell, demonstrating the potential for precise gas temperature measurement even when aerosol scattering attenuates more than 99% of the incident light. Applications of this sensor for accurate temperature measurement of evaporating n-dodecane aerosol were then performed in an aerosol shock tube. The time-resolved temperature variation due to the evaporation of fuel droplets was accurately captured without using an off-resonant laser to account for the extinction from droplet scattering. Measured temperatures confirmed the accuracy of the gasdynamic model used to calculate the pre- and post-evaporation shock conditions, as needed in shock tube studies on combustion chemistry.

Impulse responses of visible phototubes used in National Ignition Facility neutron time of flight diagnostics.

PubMed

Datte, P S; Eckart, M; Moore, A S; Thompson, W; Vergel de Dios, G

2016-11-01

Neutron-induced visible scintillation in neutron time of flight (NToF) diagnostics at the National Ignition Facility (NIF) is measured with 40 mm single stage micro-channel plate photomultipliers and a 40 mm vacuum photodiode, outside the neutron line of sight. In NIF experiments with 14 MeV neutron yields above Y > 10 × 10 15 these tubes are configured to deliver of order 1 nC of charge in the nominally 5 ns NToF into a 50 Ω load. We have examined a number of 40 mm tubes manufactured by Photek Ltd. of St. Leonards on Sea, UK, to determine possible changes in the instrument impulse response as a function of signal charge delivered in 1 ns. Precision NToF measurements at approximately 20 m require that we characterize changes in the impulse response moments to <40 ps for the first central moment and ∼2% rms for the square root of the second central moment with ∼500 ps value. Detailed results are presented for three different diode configurations.

In vitro and in vivo Efficacy of New Blue Light Emitting Diode Phototherapy Compared to Conventional Halogen Quartz Phototherapy for Neonatal Jaundice

PubMed Central

Chang, Yun Sil; Hwang, Jong Hee; Kwon, Hyuk Nam; Choi, Chang Won; Ko, Sun Young; Park, Won Soon; Shin, Son Moon

2005-01-01

High intensity light emitting diodes (LEDs) are being studied as possible light sources for the phototherapy of neonatal jaundice, as they can emit high intensity light of narrow wavelength band in the blue region of the visible light spectrum corresponding to the spectrum of maximal bilirubin absorption. We developed a prototype blue gallium nitride LED phototherapy unit with high intensity, and compared its efficacy to commercially used halogen quartz phototherapy device by measuring both in vitro and in vivo bilirubin photodegradation. The prototype device with two focused arrays, each with 500 blue LEDs, generated greater irradiance than the conventional device tested. The LED device showed a significantly higher efficacy of bilirubin photodegradation than the conventional phototherapy in both in vitro experiment using microhematocrit tubes (44±7% vs. 35±2%) and in vivo experiment using Gunn rats (30±9% vs. 16±8%). We conclude that high intensity blue LED device was much more effective than conventional phototherapy of both in vitro and in vivo bilirubin photodegradation. Further studies will be necessary to prove its clinical efficacy. PMID:15716604

Laser Frequency Stabilization for Coherent Lidar Applications using Novel All-Fiber Gas Reference Cell Fabrication Technique

NASA Technical Reports Server (NTRS)

Meras, Patrick, Jr.; Poberezhskiy, Ilya Y.; Chang, Daniel H.; Levin, Jason; Spiers, Gary D.

2008-01-01

Compact hollow-core photonic crystal fiber (HC-PCF)gas frequency reference cell was constructed using a novel packaging technique that relies on torch-sealing a quartz filling tube connected to a mechanical splice between regular and hollow-core fibers. The use of this gas cell for laser frequency stabilization was demonstrated by locking a tunable diode laser to the center of the P9 line from the (nu)1+(nu)3 band of acetylene with RMS frequency error of 2.06 MHz over 2 hours. This effort was performed in support of a task to miniaturize the laser frequency stabilization subsystem of JPL/LMCT Laser Absorption Spectrometer (LAS) instrument.

Improved Transient and Steady-State Performances of Series Resonant ZCS High-Frequency Inverter-Coupled Voltage Multiplier Converter with Dual Mode PFM Control Scheme

NASA Astrophysics Data System (ADS)

Chu, Enhui; Gamage, Laknath; Ishitobi, Manabu; Hiraki, Eiji; Nakaoka, Mutsuo

The A variety of switched-mode high voltage DC power supplies using voltage-fed type or current-fed type high-frequency transformer resonant inverters using MOS gate bipolar power transistors; IGBTs have been recently developed so far for a medical-use X-ray high power generator. In general, the high voltage high power X-ray generator using voltage-fed high frequency inverter with a high voltage transformer link has to meet some performances such as (i) short rising period in start transient of X-ray tube voltage (ii) no overshoot transient response in tube voltage, (iii) minimized voltage ripple in periodic steady-state under extremely wide load variations and filament heater current fluctuation conditions of the X-ray tube. This paper presents two lossless inductor snubber-assisted series resonant zero current soft switching high-frequency inverter using a diode-capacitor ladder type voltage multiplier called Cockcroft-Walton circuit, which is effectively implemented for a high DC voltage X-ray power generator. This DC high voltage generator which incorporates pulse frequency modulated series resonant inverter using IGBT power module packages is based on the operation principle of zero current soft switching commutation scheme under discontinuous resonant current and continuous resonant current transition modes. This series capacitor compensated for transformer resonant power converter with a high frequency transformer linked voltage boost multiplier can efficiently work a novel selectively-changed dual mode PFM control scheme in order to improve the start transient and steady-state response characteristics and can completely achieve stable zero current soft switching commutation tube filament current dependent for wide load parameter setting values with the aid of two lossless inductor snubbers. It is proved on the basis of simulation and experimental results in which a simple and low cost control implementation based on selectively-changed dual-mode PFM for high-voltage X-ray DC-DC power converter with a voltage multiplier strategy has some specified voltage pattern tracking voltage response performances under rapid rising time and no overshoot in start transient tube voltage as well as the minimized steady-state voltage ripple in tube voltage.

Investigation of the Electrical Characteristics of Al/p-Si/Al Schottky Diode

NASA Astrophysics Data System (ADS)

Şenarslan, Elvan; Güzeldir, Betül; Sağlam, Mustafa

2016-04-01

In this study, p-type Si semiconductor wafer with (100) orientation, 400 μm thickness and 1-10 Ω cm resistivity was used. The Si wafer before making contacts were chemically cleaned with the Si cleaning procedure which for remove organic contaminations were ultrasonically cleaned at acetone and methanol for 10 min respectively and then rinsed in deionized water of 18 MΩ and dried with high purity N2. Then respectively RCA1(i.e., boiling in NH3+H2O2+6H2O for 10 min at 60°C ), RCA2 (i.e., boiling in HCl+H2O2+6H2O for 10 min at 60°C ) cleaning procedures were applied and rinsed in deionized water followed by drying with a stream of N2. After the cleaning process, the wafer is immediately inserted in to the coating unit. Ohmic contact was made by evaporating of Al on the non-polished side of the p-Si wafer pieces under ~ 4,2 10-6 Torr pressure. After process evaporation, p-Si with omic contac thermally annealed 580°C for 3 min in a quartz tube furnace in N2. Then, the rectifier contact is made by evaporation Al metal diameter of about 1.0 mm on the polished surface of p-Si in turbo molecular pump at about ~ 1 10-6 Torr. Consequently, Al/p-Si/Al Schottky diode was obtained. The I-V measurements of this diode performed by the use of a KEITLEY 487 Picoammeter/Voltage Source and the C-V measurements were performed with HP 4192A (50-13 MHz) LF Impedance Analyzer at room temperature and in dark.

Characterization of Multianode Photomultiplier Tubes for a Cherenkov Detector

NASA Astrophysics Data System (ADS)

Benninghoff, Morgen; Turisini, Matteo; Kim, Andrey; Benmokhtar, Fatiha; Kubarovsky, Valery; Duquesne University Collaboration; Jefferson Lab Collaboration

2017-09-01

In the Fall of 2017, Jefferson Lab's CLAS12 (CEBAF Large Acceptance Spectrometer) detector is expecting the addition of a RICH (ring imaging Cherenkov) detector which will allow enhanced particle identification in the momentum range of 3 to 8 GeV/c. RICH detectors measure the velocity of charged particles through the detection of produced Cherenkov radiation and the reconstruction of the angle of emission. The emitted Cherenkov photons are detected by a triangular-shaped grid of 391 multianode photomultiplier tubes (MAPMTs) made by Hamamatsu. The custom readout electronics consist of MAROC (multianode read out chip) boards controlled by FPGA (Field Programmable Gate Array) boards, and adapters used to connect the MAROC boards and MAPMTs. The focus of this project is the characterization of the MAPMTs with the new front end electronics. To perform these tests, a black box setup with a picosecond diode laser was constructed with low and high voltage supplies. A highly automated procedure was developed to acquire data at different combinations of high voltage values, light intensities and readout electronics settings. Future work involves using the collected data in calibration procedures and analyzing that data to resolve the best location for each MAPMT. SULI, NSF.

Ringer tablet-based ionic liquid phase microextraction: Application in extraction and preconcentration of neonicotinoid insecticides from fruit juice and vegetable samples.

PubMed

Farajzadeh, Mir Ali; Bamorowat, Mahdi; Mogaddam, Mohammad Reza Afshar

2016-11-01

An efficient, reliable, sensitive, rapid, and green analytical method for the extraction and determination of neonicotinoid insecticides in aqueous samples has been developed using ionic liquid phase microextraction coupled with high performance liquid chromatography-diode array detector. In this method, a few microliters of 1-hexyl-3-methylimidazolium hexafluorophosphate (as an extractant) is added onto a ringer tablet and it is transferred into a conical test tube containing aqueous phase of the analytes. By manually shaking, the ringer tablet is dissolved and the extractant is released into the aqueous phase as very tiny droplets to provide a cloudy solution. After centrifuging the extracted analytes into ionic liquid are collected at the bottom of a conical test tube. Under the optimum extraction conditions, the method showed low limits of detection and quantification between 0.12 and 0.33 and 0.41 and 1.11ngmL(-1), respectively. Extraction recoveries and enrichment factors were from 66% to 84% and 655% to 843%, respectively. Finally different aqueous samples were successfully analyzed using the proposed method. Copyright © 2016 Elsevier B.V. All rights reserved.

Receiver performance of laser ranging measurements between the Lunar Observer and a subsatellite for lunar gravity studies

NASA Technical Reports Server (NTRS)

Davidson, Frederic M.; Sun, Xiaoli

1992-01-01

The optimal receiver for a direct detection laser ranging system for slow Doppler frequency shift measurement is shown to consist of a phase tracking loop which can be implemented approximately as a phase lock loop with a 2nd or 3rd order loop filter. The laser transmitter consists of an AlGaAs laser diode at a wavelength of about 800 nm and is intensity modulated by a sinewave. The receiver performance is shown to be limited mainly by the preamplifier thermal noise when a silicon avalanche photodiode is used. A high speed microchannel plate photomultiplier tube is shown to outperform a silicon APD despite its relatively low quantum efficiency at wavelengths near 800 nm. The maximum range between the Lunar Observer and the subsatellite for lunar gravity studies is shown to be about 620 km when using a state-of-the-art silicon APD and about 1000 km when using a microchannel plate photomultiplier tube in order to achieve a relative velocity measurement accuracy of 1 millimeter per second. Other parameters such as the receiver time base jitter and drift also limit performance and have to be considered in the design of an actual system.

Wavelength-Resolved Photon Fluxes of Indoor Light Sources: Implications for HOx Production

NASA Astrophysics Data System (ADS)

Kowal, S.; Kahan, T.

2017-12-01

Only a handful of studies have considered photolytic reactions indoors because photon fluxes at short wavelengths are generally considered to be negligible. We have measured wavelength resolved photon fluxes from indoor light sources including incandescent, halogen, compact fluorescent (CFL), and light emitting diodes (LED). In addition, fluorescent tubes, used in many offices and industrial buildings, and sunlight through windows were measured. The measured photon fluxes were used to calculate photolysis rate constants for potential indoor hydroxyl and peroxy radical (OH and HO2, "HOx") precursors: acetaldehyde (CH3CHO), formaldehyde (HCHO), hydrogen peroxide (H2O2), nitrous acid (HONO) and ozone (O3). Rate constants in conjunction with typical indoor concentrations were used to predict HOx production rates under various lighting conditions. Our results illustrate that all light sources except LEDs emit light at high enough energy to photolyze HOx precursors. Under typical lighting conditions only fluorescent tubes and sunlight will initiate significant photochemical HOx formation, and HONO and HCHO will be the only molecules that will have a strong influence on HOx levels indoors. Data from our experiments can be used in indoor air models to better predict HOx levels indoors.

A compactly integrated laser-induced fluorescence detector for microchip electrophoresis.

PubMed

Li, Hai-Fang; Lin, Jin-Ming; Su, Rong-Guo; Uchiyama, Katsumi; Hobo, Toshiyuki

2004-06-01

A simple and easy-to-use integrated laser-induced fluorescence detector for microchip electrophoresis was constructed and evaluated. The fluid channels and optical fiber channels in the glass microchip were fabricated using standard photolithographic techniques and wet chemical etching. A 473 nm diode-pumped laser was used as the excitation source, and the collimation and collection optics and mirrors were discarded by using a multimode optical fiber to couple the excitation light straight into the microchannel and placing the microchip directly on the top of the photomultiplier tube. A combination of filter systems was incorporated into a poly(dimethylsiloxane) layer, which was reversibly sealed to the bottom of the microchip to eliminate the scattering excitation light reaching to the photomultiplier tube. Fluorescein/calcein samples were taken as model analytes to evaluate the performance with respect to design factors. The detection limits were 0.05 microM for fluorescein and 0.18 microM for calcein, respectively. The suitability of this simple detector for fluorescence detection was demonstrated by baseline separation of fluorescein isothiocyanate (FITC)-labeled arginine, phenylalanine, and glycine and FITC within 30 s at separation length of 3.8 cm and electrical field strength of 600 V/cm.

Chemical kinetic studies of atmospheric reactions using tunable diode laser spectroscopy

NASA Technical Reports Server (NTRS)

Worsnop, Douglas R.; Nelson, David D.; Zahniser, Mark S.

1993-01-01

IR absorption using tunable diode laser spectroscopy provides a sensitive and quantitative detection method for laboratory kinetic studies of atmospheric trace gases. Improvements in multipass cell design, real time signal processing, and computer controlled data acquisition and analysis have extended the applicability of the technique. We have developed several optical systems using off-axis resonator mirror designs which maximize path length while minimizing both the sample volume and the interference fringes inherent in conventional 'White' cells. Computerized signal processing using rapid scan (300 kHz), sweep integration with 100 percent duty cycle allows substantial noise reduction while retaining the advantages of using direct absorption for absolute absorbance measurements and simultaneous detection of multiple species. Peak heights and areas are determined by curve fitting using nonlinear least square methods. We have applied these techniques to measurements of: (1) heterogeneous uptake chemistry of atmospheric trace gases (HCl, H2O2, and N2O5) on aqueous and sulfuric acid droplets; (2) vapor pressure measurements of nitric acid and water over prototypical stratospheric aerosol (nitric acid trihydrate) surfaces; and (3) discharge flow tube kinetic studies of the HO2 radical using isotopic labeling for product channel and mechanistic analysis. Results from each of these areas demonstrate the versatility of TDL absorption spectroscopy for atmospheric chemistry applications.

Simple luminescence detectors using a light-emitting diode or a Xe lamp, optical fiber and charge-coupled device, or photomultiplier for determining proteins in capillary electrophoresis: a critical comparison.

PubMed

Casado-Terrones, Silvia; Fernández-Sánchez, Jorge F; Segura-Carretero, Antonio; Fernández-Gutiérrez, Alberto

2007-06-01

The performance of two homemade fluorescence-induced capillary electrophoresis detectors, one based on light-emitting diode (LED) as the excitation source and a charge-coupled device (CCD) photodetector and the other based on a commercial luminescence spectrometer (Xe lamp) as the excitation source and a photomultiplier tube as a detector, were compared for the determination of fluorescent proteins R-phycoerythrin and B-phycoerythrin. Both devices use commercially available, reasonably priced optical components that can be used by nonexperts. After fine optimization of several optical and separation parameters in both devices, a zone capillary electrophoresis methodology was achieved with 50mM borate buffer (pH 8.4) and 10mM phytic acid for the determination of two phycobiliproteins. Detection limits of 0.50 and 0.64microg/ml for R-phycoerythrin and B-phycoerythrin, respectively, were achieved by using the LED-induced fluorescence capillary electrophoresis (LED-IF-CE) system, and corresponding detection limits of 2.73 and 2.16microg/ml were achieved by using the Xe lamp-IF-CE system. Analytical performance and other parameters, such as cost and potential to miniaturization, are compared for both devices.

Motorized Beam Alignment of a Commercial X-ray Diffractometer

NASA Technical Reports Server (NTRS)

Van Zandt, Noah R.; Myers, James F.; Rogers, Richard B

2013-01-01

X-ray diffraction (XRD) is a powerful analysis method that allows researchers to noninvasively probe the crystalline structure of a material. This includes the ability to determine the crystalline phases present, quantify surface residual stresses, and measure the distribution of crystallographic orientations. The Structures and Materials Division at the NASA Glenn Research Center (GRC) heavily uses the on-site XRD lab to characterize advanced metal alloys, ceramics, and polymers. One of the x-ray diffractometers in the XRD lab (Bruker D8 Discover) uses three different x-ray tubes (Cu, Cr, and Mn) for optimal performance over numerous material types and various experimental techniques. This requires that the tubes be switched out and aligned between experiments. This alignment maximizes the x-ray tube s output through an iterative process involving four set screws. However, the output of the x-ray tube cannot be monitored during the adjustment process due to standard radiation safety engineering controls that prevent exposure to the x-ray beam when the diffractometer doors are open. Therefore, the adjustment process is a very tedious series of blind adjustments, each followed by measurement of the output beam using a PIN diode after the enclosure doors are shut. This process can take up to 4 hr to perform. This technical memorandum documents an in-house project to motorize this alignment process. Unlike a human, motors are not harmed by x-ray radiation of the energy range used in this instrument. Therefore, using motors to adjust the set screws will allow the researcher to monitor the x-ray tube s output while making interactive adjustments from outside the diffractometer. The motorized alignment system consists of four motors, a motor controller, and a hand-held user interface module. Our goal was to reduce the alignment time to less than 30 min. The time available was the 10-week span of the Lewis' Educational and Research Collaborative Internship Project (LERCIP) summer internship program and the budget goal was $1200. In this report, we will describe our motorization design and discuss the results of its implementation.

Effect of red and infrared low-level laser therapy in endodontic sealer on subcutaneous tissue

NASA Astrophysics Data System (ADS)

Sivieri-Araujo, G.; Berbert, F. L. C. V.; Ramalho, L. T. O.; Rastelli, A. N. S.; Crisci, F. S.; Bonetti-Filho, I.; Tanomaru-Filho, M.

2011-12-01

This study evaluated the reactions of connective tissue after the implant of one endodontic sealer (Endofill) that was irradiated with low-level laser therapy (LLLT). Sixty mice were distributed into three Groups ( n = 20): GI—the tubes filled with Endofill were implanted in the animals and were not irradiated with LLLT; GII—the tubes containing Endofill were implanted in the animals and then irradiated with red LLLT (InGaAlP, λ = 685 nm, P = 35 mW, t = 58 s, D = 72 J/cm2, E = 2 J, Ø = 0.60 mm, continuous mode) and GIII—the tubes with Endofill were implanted and irradiated with infrared LLLT (AsGaAl, λ = 830 nm, P = 50 mW, t = 40 s, D = 70 J/cm2, E = 2 J, Ø = 0.60 mm, continuous wave) both are semiconductor diode laser device. The animals were killed after 7 and 30 days. Series sections of 6 μm thickness were obtained and stained with Hematoxylin-Eosin and Masson Trichrome. The data of the histopathological evaluation were submitted to Kruskal-Wallis and Dunn's tests at 5% significance level. At the 7th day: GI showed the presence of inflammation; GII and GIII reduced inflammation. At 30th day: GI showed low inflammation; GII and GII the absence of inflammation. It was possible show that LLLT reduced the irritating effect promoted by the Endofill, in the period of 7 days ( p > 0.05). The tissue repair occurred in 30 days, regardless of the use of LLLT.

Electronic and transport properties of zigzag carbon nanotubes with the presence of periodical antidot and boron/nitride doping defects

NASA Astrophysics Data System (ADS)

Zoghi, Milad; Yazdanpanah Goharrizi, Arash; Mirjalili, Seyed Mohammad; Kabir, M. Z.

2018-06-01

Electronic and transport properties of Carbon nanotubes (CNTs) are affected by the presence of physical or chemical defects in their structures. In this paper, we present novel platforms of defected zigzag CNTs (Z-CNTs) in which two topologies of antidot and Boron/Nitride (BN) doping defects are periodically imposed throughout the length of perfect tubes. Using the tight binding model and the non-equilibrium Green’s function method, it is realized that the quantum confinement of Z-CNTs is modified by the presence of such defects. This new quantum confinement results in the appearance of mini bands and mini gaps in the transmission spectra, as well as a modified band structure and band gap size. The modified band gap could be either larger or smaller than the intrinsic band gap of a perfect tube, which is determined by the category of Z-CNT. The in-depth analysis shows that the size of the modified band gap is the function of several factors consisting of: the radii of tube (D r), the distance between adjacent defects (d d), the utilized defect topology, and the kind of defect (antidot or BN doping). Furthermore, taking advantage of the tunable band gap size of Z-CNT with the presence of periodical defects, new platforms of defect-based Z-CNT resonant tunneling diode (RTD) are proposed for the first time. Our calculations demonstrate the apparition of resonances in transmission spectra and the negative differential resistance in the I-V characteristics for such RTD platforms.

BX CY NZ nanotubes and nanoparticles

DOEpatents

Cohen, Marvin Lou; Zettl, Alexander Karlwalter

2001-01-01

The invention provides crystalline nanoscale particles and tubes made from a variety of stoichiometries of B.sub.x C.sub.y N.sub.z where x, y, and z indicate a relative amount of each element compared to the others and where no more than one of x, y, or z are zero for a single stoichiometry. The nanotubes and nanoparticles are useful as miniature electronic components, such as wires, coils, schotky barriers, diodes, etc. The nanotubes and nanoparticles are also useful as coating that will protect an item from detection by electromagnetic monitoring techniques like radar. The nanotubes and nanoparticles are additionally useful for their mechanical properties, being comparable in strength and stiffness to the best graphite fibers or carbon nanotubes. The inventive nanoparticles are useful in lubricants and composites.

Low-Current, Xenon Orificed Hollow Cathode Performance for In-Space Applications

NASA Technical Reports Server (NTRS)

Domonkos, Matthew T.; Patterson, Michael J.; Gallimore, Alec D.

2002-01-01

An experimental investigation of the operating characteristics of 3.2-mm diameter orificed hollow cathodes was conducted to examine low current and low flow rate operation. Cathode power was minimized with an orifice aspect ratio of approximately one and the use of an enclosed keeper. Cathode flow rate requirements were proportional to orifice diameter and the inverse of the orifice length. The minimum power consumption in diode mode was 10-W, and the minimum mass flow rate required for spot-mode emission was approximately 0.08-mg/s. Cathode temperature profiles were obtained using an imaging radiometer and conduction was found to be the dominant heat transfer mechanism from the cathode tube. Orifice plate temperatures were found to be weakly dependent upon the flow rate and strongly dependent upon the current.

Uranyl adsorption kinetics within silica gel: dependence on flow velocity and concentration

NASA Astrophysics Data System (ADS)

Dodd, Brandon M.; Tepper, Gary

2017-09-01

Trace quantities of a uranyl dissolved in water were measured using a simple optical method. A dilute solution of uranium nitrate dissolved in water was forced through nanoporous silica gel at fixed and controlled water flow rates. The uranyl ions deposited and accumulated within the silica gel and the uranyl fluorescence within the silica gel was monitored as a function of time using a light emitting diode as the excitation source and a photomultiplier tube detector. It was shown that the response time of the fluorescence output signal at a particular volumetric flow rate or average liquid velocity through the silica gel can be used to quantify the concentration of uranium in water. The response time as a function of concentration decreased with increasing flow velocity.

Development and test of video systems for airborne surveillance of oil spills

NASA Technical Reports Server (NTRS)

Millard, J. P.; Arvesen, J. C.; Lewis, P. L.

1975-01-01

Five video systems - potentially useful for airborne surveillance of oil spills - were developed, flight tested, and evaluated. The systems are: (1) conventional black and white TV, (2) conventional TV with false color, (3) differential TV, (4) prototype Lunar Surface TV, and (5) field sequential TV. Wavelength and polarization filtering were utilized in all systems. Greatly enhanced detection of oil spills, relative to that possible with the unaided eye, was achieved. The most practical video system is a conventional TV camera with silicon-diode-array image tube, filtered with a Corning 7-54 filter and a polarizer oriented with its principal axis in the horizontal direction. Best contrast between oil and water was achieved when winds and sea states were low. The minimum detectable oil film thickness was about 0.1 micrometer.

Demonstration of a Very Inexpensive, Turbidimetric, Real-Time, RT-LAMP Detection Platform Using Shrimp Laem-Singh Virus (LSNV) as a Model

PubMed Central

Arunrut, Narong; Suebsing, Rungkarn; Withyachumnarnkul, Boonsirm; Kiatpathomchai, Wansika

2014-01-01

Rapid and accurate detection of pathogens under field laboratory conditions is necessary for effective control of veterinary pathogens. Here we describe a prototype, portable, pathogen detection device developed for single tube, real-time, reverse transcription, loop-mediated isothermal amplification (RT-LAMP) using Laem-Singh virus (LSNV) as a model. LSNV is an RNA virus and a component cause of growth retardation in black tiger shrimp. We chose its RNA-dependent RNA polymerase (RdRp) gene as the target for our tests. The basis for detection was measurement of turbidity arising from formation of a white, insoluble magnesium pyrophosphate precipitate byproduct upon amplification of the RdRp target sequence from 100 ng template RNA extracted from shrimp. The measurement device consisted of a heating block to maintain constant temperature in the RT-LAMP reaction for 8 Eppindorf sample tubes, a light-emitting diode (LED) light source providing red light emission at 650 nm wavelength to pass through sample tubes, a light dependent resistance (LDR) photo-detector and a software program to report turbidity events and could potentially be marketed for under US$3000. The device was connected to a computer to display real-time results in a variety of formats. The optimized protocol for LSNV detection consisted of incubation of the sample tubes at 65°C for 1 h during which turbidity was continuously measured, and quantitative results could be obtained by reaction time measurement. The sensitivity of detection was comparable to that of conventional nested RT-PCR and there was no cross reaction with other common shrimp viruses. The device was used for quantitative measurement of relative copy numbers of LSNV RdRp in 8 shrimp tissues and they were found to be highest in the gills followed in order by the lymphoid organ and hemolymph (p≤0.05). This platform can be easily adapted for detection of other pathogens under field laboratory settings. PMID:25255231

Demonstration of a very inexpensive, turbidimetric, real-time, RT-LAMP detection platform using shrimp Laem-Singh virus (LSNV) as a model.

PubMed

Arunrut, Narong; Suebsing, Rungkarn; Withyachumnarnkul, Boonsirm; Kiatpathomchai, Wansika

2014-01-01

Rapid and accurate detection of pathogens under field laboratory conditions is necessary for effective control of veterinary pathogens. Here we describe a prototype, portable, pathogen detection device developed for single tube, real-time, reverse transcription, loop-mediated isothermal amplification (RT-LAMP) using Laem-Singh virus (LSNV) as a model. LSNV is an RNA virus and a component cause of growth retardation in black tiger shrimp. We chose its RNA-dependent RNA polymerase (RdRp) gene as the target for our tests. The basis for detection was measurement of turbidity arising from formation of a white, insoluble magnesium pyrophosphate precipitate byproduct upon amplification of the RdRp target sequence from 100 ng template RNA extracted from shrimp. The measurement device consisted of a heating block to maintain constant temperature in the RT-LAMP reaction for 8 Eppindorf sample tubes, a light-emitting diode (LED) light source providing red light emission at 650 nm wavelength to pass through sample tubes, a light dependent resistance (LDR) photo-detector and a software program to report turbidity events and could potentially be marketed for under US$3000. The device was connected to a computer to display real-time results in a variety of formats. The optimized protocol for LSNV detection consisted of incubation of the sample tubes at 65 °C for 1 h during which turbidity was continuously measured, and quantitative results could be obtained by reaction time measurement. The sensitivity of detection was comparable to that of conventional nested RT-PCR and there was no cross reaction with other common shrimp viruses. The device was used for quantitative measurement of relative copy numbers of LSNV RdRp in 8 shrimp tissues and they were found to be highest in the gills followed in order by the lymphoid organ and hemolymph (p ≤ 0.05). This platform can be easily adapted for detection of other pathogens under field laboratory settings.

Explorations of Space-Charge Limits in Parallel-Plate Diodes and Associated Techniques for Automation

NASA Astrophysics Data System (ADS)

Ragan-Kelley, Benjamin

Space-charge limited flow is a topic of much interest and varied application. We extend existing understanding of space-charge limits by simulations, and develop new tools and techniques for doing these simulations along the way. The Child-Langmuir limit is a simple analytic solution for space-charge limited current density in a one-dimensional diode. It has been previously extended to two dimensions by numerical calculation in planar geometries. By considering an axisymmetric cylindrical system with axial emission from a circular cathode of finite radius r and outer drift tube R > r and gap length L, we further examine the space charge limit in two dimensions. We simulate a two-dimensional axisymmetric parallel plate diode of various aspect ratios (r/L), and develop a scaling law for the measured two-dimensional space-charge limit (2DSCL) relative to the Child-Langmuir limit as a function of the aspect ratio of the diode. These simulations are done with a large (100T) longitudinal magnetic field to restrict electron motion to 1D, with the two-dimensional particle-in-cell simulation code OOPIC. We find a scaling law that is a monotonically decreasing function of this aspect ratio, and the one-dimensional result is recovered in the limit as r >> L. The result is in good agreement with prior results in planar geometry, where the emission area is proportional to the cathode width. We find a weak contribution from the effects of the drift tube for current at the beam edge, and a strong contribution of high current-density "wings" at the outer-edge of the beam, with a very large relative contribution when the beam is narrow. Mechanisms for enhancing current beyond the Child-Langmuir limit remain a matter of great importance. We analyze the enhancement effects of upstream ion injection on the transmitted current in a one-dimensional parallel plate diode. Electrons are field-emitted at the cathode, and ions are injected at a controlled current from the anode. An analytic solution is derived for maximizing the electron current throughput in terms of the ion current. This analysis accounts for various energy regimes, from classical to fully relativistic. The analytical result is then confirmed by simulation of the diode in each energy regime. Field-limited emission is an approach for using Gauss's law to satisfy the space charge limit for emitting current in particle-in-cell simulations. We find that simple field-limited emission models make several assumptions, which introduce small, systematic errors in the system. We make a thorough analysis of each assumption, and ultimately develop and test a new emission scheme that accounts for each. The first correction we make is to allow for a non-zero surface field at the boundary. Since traditional field-emission schemes only aim to balance Gauss's law at the surface, a zero surface field is an assumed condition. But for many systems, this is not appropriate, so the addition of a target surface field is made. The next correction is to account for nonzero initial velocity, which, if neglected, results in a systematic underestimation of the current, due to assuming that all emitted charge will be weighted to the boundary, when in fact it will be weighted as a fraction strictly less than unity, depending on the distance across the initial cell the particle travels in its initial fractional timestep. A correction is made to the scheme, to use the actual particle weight to adjust the target emission. The final analyses involve geometric terms, analyzing the effects of cylindrical coordinates, and taking particular care to analyze the center of a cylindrical beam, as well as the outer edge of the beam, in Cartesian coordinates. We find that balancing Gauss's law at the edge of the beam is not the correct behavior, and that it is important to resolve the profile of the emitted current, in order to avoid systematic errors. A thorough analysis is done of the assumptions made in prior implementations, and corrections are introduced for cylindrical geometry, non-zero injection velocity, and non-zero surface field. Particular care is taken to determine special conditions for the outermost node, where we find that forcing a balance of Gauss's law would be incorrect. (Abstract shortened by UMI.)

Characterization of a fiber-less, multichannel optical probe for continuous wave functional near-infrared spectroscopy based on silicon photomultipliers detectors: in-vivo assessment of primary sensorimotor response.

PubMed

Chiarelli, Antonio M; Libertino, Sebania; Zappasodi, Filippo; Mazzillo, Massimo; Pompeo, Francesco Di; Merla, Arcangelo; Lombardo, Salvatore; Fallica, Giorgio

2017-07-01

We report development, testing, and in vivo characterization of a multichannel optical probe for continuous wave (CW) functional near-infrared spectroscopy (fNIRS) that relies on silicon photomultipliers (SiPMs) detectors. SiPMs are cheap, low voltage, and robust semiconductor light detectors with performances analogous to photomultiplier tubes (PMTs). In contrast with PMTs, SiPMs allow direct contact with the head and transfer of the analog signals through thin cables greatly increasing the system flexibility avoiding optical fibers. The coupling of SiPMs and light-emitting diodes (LEDs) made the optical probe lightweight and robust against motion artifacts. After characterization of SiPM performances, which was proven to provide a noise equivalent power below 3 fW, the apparatus was compared through an in vivo experiment to a commercial system relying on laser diodes, PMTs, and optical fibers for light probing and detection. The optical probes were located over the primary sensorimotor cortex and the similarities between the hemodynamic responses to the contralateral motor task were assessed. When compared to other state-of-the-art wearable fNIRS systems, where photodiode detectors are employed, the single photon sensitivity and dynamic range of SiPMs can fully exploit the long and variable interoptode distances needed for correct estimation of brain hemodynamics using CW-fNIRS.

Endocanalicular diode laser dacryocystorhinostomy for nasolacrimal duct obstruction: short-term results of a new minimally invasive surgical technique.

PubMed

Özçimen, Muammer; Uysal, Ismail Onder; Eryılmaz, Mehmet Akif; Kal, Ali

2010-11-01

To evaluate the results, complications, effectiveness, and operative results of the endocanalicular laser dacryocystorhinostomy (ECL DCR) in the distal obstructions of the lacrimal drainage system. Sixty eyes of 57 patients who had a diagnosis of distal obstruction of the lacrimal drainage system were evaluated retrospectively in this study. All patients underwent ECL DCR by diode laser between October 2008 and July 2009. Forty-nine patients (86%) were females, 8 patients (14%) were males, and age distribution was between 3 and 84 years old (median, 40 y). The canaliculi were intubated by a silicone tube. The patency of the nasolacrimal system was controlled by lacrimal lavage, loss of epiphora, and endoscopic evaluation of the endonasal rhinostomy site with routine follow-up scheduled at first day and 1-week, 1-month, and 3-month postoperative intervals. After the 60 ECL DCRs, 10 patients underwent revision ECL DCR because of the persistent epiphora. The patency of the nasolacrimal duct or the decrease of the symptoms was assigned as success. There were no symptoms at all in 83.3% of the patients. The ECL DCR in the treatment of the distal obstructions of the lacrimal drainage system was easily tolerated by the patients, cosmetically preferred because there was no incision and scar formation with high success rates, and a minimally invasive alternative technique.

CO2 concentration and temperature sensor for combustion gases using diode-laser absorption near 2.7 μm

NASA Astrophysics Data System (ADS)

Farooq, A.; Jeffries, J. B.; Hanson, R. K.

2008-03-01

A new tunable diode-laser sensor based on CO2 absorption near 2.7 μm is developed for high-resolution absorption measurements of CO2 concentration and temperature. The sensor probes the R(28) and P(70) transitions of the ν1+ν3 combination band of CO2 that has stronger absorption line-strengths than the bands near 1.5 μm and 2.0 μm used previously to sense CO2 in combustion gases. The increased absorption strength of transitions in this new wavelength range provides greatly enhanced sensitivity and the potential for accurate measurements in combustion gases with short optical path lengths. Simulated high-temperature spectra are surveyed to find candidate CO2 transitions isolated from water vapor interference. Measurements of line-strength, line position, and collisional broadening parameters are carried out for candidate CO2 transitions in a heated static cell as a function of temperature and compared to literature values. The accuracy of a fixed-wavelength CO2 absorption sensor is determined via measurement of known temperature and CO2 mole fraction in a static cell and shock-tube. Absorption measurements of CO2 are then made in a laboratory flat-flame burner and in ignition experiments of shock-heated n-heptane/O2/argon mixtures to illustrate the potential of this sensor for combustion and reacting-flow applications.

A diode laser sensor for rapid, sensitive measurements of gas temperature and water vapour concentration at high temperatures and pressures

NASA Astrophysics Data System (ADS)

Rieker, G. B.; Li, H.; Liu, X.; Jeffries, J. B.; Hanson, R. K.; Allen, M. G.; Wehe, S. D.; Mulhall, P. A.; Kindle, H. S.

2007-05-01

A near-infrared diode laser sensor is presented that is capable of measuring time-varying gas temperature and water vapour concentration at temperatures up to 1050 K and pressures up to 25 atm with a bandwidth of 7.5 kHz. Measurements with noise-equivalent-absorbances of the order of 10-3 (10-5 Hz-1/2) are made possible in dynamic environments through the use of wavelength modulation spectroscopy (WMS) with second harmonic detection (2f) on two water vapour spectral features near 7203.9 and 7435.6 cm-1. Laser performance characteristics that become important at the large modulation depths needed at high pressures are accounted for in the WMS-2f signal analysis, and the utility of normalization by the 1f signal to correct for variations in laser intensity, transmission and detector gain is presented. Laboratory measurements with the sensor system in a static cell with known temperature and pressure agree to 3% RMS in temperature and 4% RMS in H2O mole fraction for 500 < T < 900 K and 1 < P < 25 atm. The sensor time response is demonstrated in a high-pressure shock tube where shock wave transients are successfully captured, the average measured post-shock temperature agrees within 1% of the expected value, and H2O mole fraction agrees within 8%.

Fully Digital Arrays of Silicon Photomultipliers (dSiPM) - a Scalable Alternative to Vacuum Photomultiplier Tubes (PMT)

NASA Astrophysics Data System (ADS)

Haemisch, York; Frach, Thomas; Degenhardt, Carsten; Thon, Andreas

Silicon Photomultipliers (SiPMs) have emerged as promising alternative to fast vacuum photomultiplier tubes (PMT). A fully digital implementation of the Silicon Photomultiplier (dSiPM) has been developed in order to overcome the deficiencies and limitations of the so far only analog SiPMs (aSiPMs). Our sensor is based on arrays of single photon avalanche photodiodes (SPADs) integrated in a standard CMOS process. Photons are detected directly by sensing the voltage at the SPAD anode using a dedicated cell electronics block next to each diode. This block also contains active quenching and recharge circuits as well as a one bit memory for the selective inhibit of detector cells. A balanced trigger network is used to propagate the trigger signal from all cells to the integrated time-to-digital converter. In consequence, photons are detected and counted as digital signals, thus making the sensor less susceptible to temperature variations and electronic noise. The integration with CMOS logic provides the added benefit of low power consumption and possible integration of data post-processing directly in the sensor. In this overview paper, we discuss the sensor architecture together with its characteristics with a focus on scalability and practicability aspects for applications in medical imaging, high energy- and astrophysics.

Solid state lasers for use in non-contact temperature measurements

NASA Technical Reports Server (NTRS)

Buoncristiani, A. M.

1989-01-01

The last decade has seen a series of dramatic developments in solid state laser technology. Prominent among these has been the emergence of high power semiconductor laser diode arrays and a deepening understanding of the dynamics of solid state lasers. Taken in tandem these two developments enable the design of laser diode pumped solid state lasers. Pumping solid state lasers with semiconductor diodes relieves the need for cumbersome and inefficient flashlamps and results in an efficient and stable laser with the compactness and reliability. It provides a laser source that can be reliably used in space. These new coherent sources are incorporated into the non-contact measurement of temperature. The primary focus is the development and characterization of new optical materials for use in active remote sensors of the atmosphere. In the course of this effort several new materials and new concepts were studied which can be used for other sensor applications. The general approach to the problem of new non-contact temperature measurements has had two components. The first component centers on passive sensors using optical fibers; an optical fiber temperature sensor for the drop tube was designed and tested at the Marshall Space Flight Center. Work on this problem has given insight into the use of optical fibers, especially new IR fibers, in thermal metrology. The second component of the effort is to utilize the experience gained in the study of passive sensors to examine new active sensor concepts. By active sensor are defined as a sensing device or mechanism which is interrogated in some way be radiation, usually from a laser. The status of solid state lasers as sources for active non-contact temperature sensors are summarized. Some specific electro-optic techniques are described which are applicable to the sensor problems at hand. Work on some of these ideas is in progress while other concepts are still being worked out.

Electrical and Optical Enhancement in Internally Nanopatterned Organic Light-Emitting Diodes

NASA Astrophysics Data System (ADS)

Fina, Michael Dane

Organic light-emitting diodes (OLEDs) have made tremendous technological progress in the past two decades and have emerged as a top competitor for next generation light-emitting displays and lighting. State-of-the-art OLEDs have been reported in literature to approach, and even surpass, white fluorescent tube efficiency. However, despite rapid technological progress, efficiency metrics must be improved to compete with traditional inorganic light-emitting diode (LED) technology. Organic materials possess specialized traits that permit manipulations to the light-emitting cavity. Overall, as demonstrated within, these modifications can be used to improve electrical and optical device efficiencies. This work is focused at analyzing the effects that nanopatterned geometric modifications to the organic active layers play on device efficiency. In general, OLED efficiency is complicated by the complex, coupled processes which contribute to spontaneous dipole emission. A composite of three sub-systems (electrical, exciton and optical) ultimately dictate the OLED device efficiency. OLED electrical operation is believed to take place via a low-mobility-modified Schottky injection process. In the injection-limited regime, geometric effects are expected to modify the local electric field leading to device current enhancement. It is shown that the patterning effect can be used to enhance charge carrier parity, thereby enhancing overall recombination. Current density and luminance characteristics are shown to be improved by OLED nanopatterning from both the model developed within and experimental techniques. Next, the optical enhancement effects produced by the nanopatterned array are considered. Finite-difference time-domain (FDTD) simulations are used to determine positional, spectral optical enhancement for the nanopatterned device. The results show beneficial effects to the device performance. The optical enhancements are related to the reduction in internal radiative quenching (improved internal quantum efficiency) and improvement in light extraction (improved outcoupling efficiency). Furthermore, the electrical model is used to construct a positional radiative efficiency map that when combined with the optical enhancement reveals the overall external quantum efficiency enhancement.

Sensitive determination of sulfonamides in environmental water by capillary electrophoresis coupled with both silvering detection window and in-capillary optical fiber light-emitting diode-induced fluorescence detector.

PubMed

Ji, Hongyun; Wu, Yu; Duan, Zhijuan; Yang, Feng; Yuan, Hongyan; Xiao, Dan

2017-02-01

A new detector, silvering detection window and in-capillary optical fiber light-emitting diode-induced fluorescence detector (SDW-ICOF-LED-IFD), is introduced for capillary electrophoresis (CE). The strategy of the work was that half surface of the detection window was coated with silver mirror, which could reflect the undetected fluorescence to the photomultiplier tube to be detected, consequently enhancing the detection sensitivity. Sulfonamides (SAs) are important antibiotics that achieved great applications in many fields. However, they pose a serious threat on the environment and human health when they enter into the environment. The SDW-ICOF-LED-IFD-CE system was used to determine fluorescein isothiocyanate (FITC)-labeled sulfadoxine (SDM), sulfaguanidine (SGD) and sulfamonomethoxine sodium (SMM-Na) in environmental water. The detection results obtained by the SDW-ICOF-LED-IFD-CE system were compared to those acquired by the CE with in-capillary optical fiber light-emitting diode-induced fluorescence detection (ICOF-LED-IFD-CE). The limits of detection (LODs) of SDW-ICOF-LED-IFD-CE and ICOF-LED-IFD-CE were 1.0-2.0 nM and 2.5-7.7 nM (S/N = 3), respectively. The intraday (n = 6) and interday (n = 6) precision of migration time and corresponding peak area for both types of CE were all less than 0.86% and 3.68%, respectively. The accuracy of the proposed method was judged by employing standard addition method, and recoveries obtained were in the range of 92.5-102.9%. The results indicated that the sensitivity of the SDW-ICOF-LED-IFD-CE system was improved, and that its reproducibility and accuracy were satisfactory. It was successfully applied to analyze SAs in environmental water. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Characterisation of Geiger-mode avalanche photodiodes for medical imaging applications

NASA Astrophysics Data System (ADS)

Britvitch, I.; Johnson, I.; Renker, D.; Stoykov, A.; Lorenz, E.

2007-02-01

Recently developed multipixel Geiger-mode avalanche photodiodes (G-APDs) are very promising candidates for the detection of light in medical imaging instruments (e.g. positron emission tomography) as well as in high-energy physics experiments and astrophysical applications. G-APDs are especially well suited for morpho-functional imaging (multimodality PET/CT, SPECT/CT, PET/MRI, SPECT/MRI). G-APDs have many advantages compared to conventional photosensors such as photomultiplier tubes because of their compact size, low-power consumption, high quantum efficiency and insensitivity to magnetic fields. Compared to avalanche photodiodes and PIN diodes, they are advantageous because of their high gain, reduced sensitivity to pick up and the so-called nuclear counter effect and lower noise. We present measurements of the basic G-APD characteristics: photon detection efficiency, gain, inter-cell crosstalk, dynamic range, recovery time and dark count rate.

[Quality assurance in diagnostic radiology using an automated system. Experience and results].

PubMed

Princivalli, M; Stea, L; Ordóñez, P L; Bussoli, L; Marchetti, C

1995-05-01

The authors report their personal experience with the use of an integrated quality control system in the radiology department. The system we used was the RTI DIGI-X Plus, a Swedish-made product, allowing a wide range of parameters to be measured on diagnostic X-ray units for general radiography, mammography and fluoroscopy. Data can be retrieved with a minimum number of measurements. The "oRTIgo" software improves the quality assurance system and ensures document compliance with international recommendations. The equipment consists of a detector unit, a processor and a display unit. The detector consists of a rotating holder with 12 combinations of metal filters of various thickness mounted in front of two photo-diodes covered with identical X-ray intensifying gadoliniumoxysulfide screens. This unit is connected to a data acquisition system controlled by a microcomputer. Peak tube voltage and total tube filtration are derived from the ratio of detector signals. The relationship between this ratio and the measured quantity is determined by a calibration procedure. Furthermore, exposure time "mAs" value, "mAs" linearity and exposure (or kerma in air) can be measured. Digital storage can be performed and input signals displayed. A serial interface is used to communicate with a PC for QC management purposes. An error propagation model is used to determine the inaccuracy of peak tube voltage measurements. With the DIGI-X Plus system, measurements can be carried out in a shorter time and the stored data reprocessed later on. After QA testing on 20 X-ray units in the radiology department, in vivo doses were measured using a TLD Harshaw 100 on 46 randomly selected patients undergoing chest examinations. The results are reported and analyzed following the NRPB protocol and show high agreement with the recommended values.

The Commercialization of the SiC Flame Sensor

NASA Astrophysics Data System (ADS)

Fedison, Jeffrey B.

2002-03-01

The technical and scientific steps required to produce large quantities of SiC flame sensors is described. The technical challenges required to understand, fabricate, test and package SiC photodiodes in 1990 were numerous since SiC device know how was embryonic. A sense of urgency for a timely replacement of the Geiger Muller gas discharge tube soon entered the scene. New dual fuel GE Power Systems gas turbines, which were designed to lean burn either natural gas or oil for low NOx emissions required a much higher sensitivity sensor. Joint work between GE CRD and Cree Research sponsored by the GE Aircraft Engine Division developed the know how for the fabrication of high sensitivity, high yield, reliable SiC photodiodes. Yield issues were uncovered and overcome. The urgency for system insertion required that SiC diode and sensor circuitry development needed to be carried out simultaneously with power plant field tests of laboratory or prototype sensor assemblies. The sensor and reliability specifications were stringent since the sensors installed on power plant turbine combustor walls are subjected to high levels of vibration, elevated temperatures, and high pressures. Furthermore a fast recovery time was required to sense flame out in spite of the fact that the amplifier circuit needed have high gain and high dynamic range. SiC diode technical difficulties were encountered and overcome. The science of hydrocarbon flames will also be described together with the fortunate overlap of the strong OH emission band with the SiC photodiode sensitivity versus wavelength characteristic. The extremely low dark current (<1pA/cm^2) afforded by the wide band gap and the 3eV sensitivity cutoff at 400nm made if possible to produce low amplifier offsets, high sensitivity and high dynamic range along with immunity to black body radiation from combustor walls. Field tests at power plants that had experienced turbine tripping, whenever oil fuel and/or oil with steam injection for power augmentation, were extremely encouraging. This warrantee problem previously due to the low sensitivity of the Geiger Muller tube was solved using the much higher sensitivity SiC detector. This sensitivity increase is partially due to the fact that the SiC photodiode “sees” the strong OH emission band whereas the Geiger Muller tube can only respond to the shorter wavelength CO emission band. Other successful field tests were observed and acclaimed by power plant operators, which for the first time could track mode switching and power level (flame intensity) because of the high dynamic range (>5000:1). The demand for this product thereupon rose dramatically. This success, the first for SiC devices other than that of SiC blue LEDs, is leading GE to implement this technology in other application fields.

Rapid determination of vial heat transfer parameters using tunable diode laser absorption spectroscopy (TDLAS) in response to step-changes in pressure set-point during freeze-drying.

PubMed

Kuu, Wei Y; Nail, Steven L; Sacha, Gregory

2009-03-01

The purpose of this study was to perform a rapid determination of vial heat transfer parameters, that is, the contact parameter K(cs) and the separation distance l(v), using the sublimation rate profiles measured by tunable diode laser absorption spectroscopy (TDLAS). In this study, each size of vial was filled with pure water followed by a freeze-drying cycle using a LyoStar II dryer (FTS Systems) with step-changes of the chamber pressure set-point at to 25, 50, 100, 200, 300, and 400 mTorr. K(cs) was independently determined by nonlinear parameter estimation using the sublimation rates measured at the pressure set-point of 25 mTorr. After obtaining K(cs), the l(v) value for each vial size was determined by nonlinear parameter estimation using the pooled sublimation rate profiles obtained at 25 to 400 mTorr. The vial heat transfer coefficient K(v), as a function of the chamber pressure, was readily calculated, using the obtained K(cs) and l(v) values. It is interesting to note the significant difference in K(v) of two similar types of 10 mL Schott tubing vials, primary due to the geometry of the vial-bottom, as demonstrated by the images of the contact areas of the vial-bottom. (c) 2008 Wiley-Liss, Inc. and the American Pharmacists Association

A long-pulse repetitive operation magnetically insulated transmission line oscillator.

PubMed

Fan, Yu-Wei; Zhong, Hui-Huang; Zhang, Jian-De; Shu, Ting; Liu, Jin Liang

2014-05-01

The improved magnetically insulated transmission line oscillator (MILO) is a gigawatt-class L-band high power microwave tube. It has allowed us to generate 3.1 GW pulse of 40 ns duration in the single-pulse operation and 500 MW pulse of 25 ns duration in the repetition rate operation. However, because of the severe impedance mismatch, the power conversion efficiency is only about 4% in the repetition rate operation. In order to eliminate the impedance mismatch and obtain repetitive long-pulse high-power microwave (HPM), a series of experiments are carried out and the recent progress is presented in this paper. In the single-pulse operation, when the diode voltage is 466 kV and current is 41.6 kA, the radiated microwave power is above 2.2 GW, the pulse duration is above 102 ns, the microwave frequency is about 1.74 GHz, and the power conversion efficiency is about 11.5%. In the repetition rate operation, under the condition of the diode voltage about 400 kV, beam current about 38 kA, the radiated microwave power is about 1.0 GW, the pulse duration is about 85 ns. Moreover, the radiated microwave power and the pulse duration decline little by little when the shot numbers increase gradually. The experimental results show that the impedance matching is a vital factor for HPM systems and one of the major technical challenges is to improve the cathode for the repetition rate operation MILO.

Photoacoustic determination of glucose concentration in whole blood by a near-infrared laser diode

NASA Astrophysics Data System (ADS)

Zhao, Zuomin; Myllylae, Risto A.

2001-06-01

The near-infrared photoacoustic technique is recognized as a potential method for the non-invasive determination of human glucose, because near-infrared light can incident a few millimeters into human tissue, where it produces an acoustic wave capable of carrying information about the composition of the tissue. This paper demonstrates a photoacoustic glucose measurement in a blood sample as a step toward a non-invasive measurement. The experimental apparatus consists of a near-infrared laser diode operating with 4 micro joules pulse energy at 905 nm, a roller pump connected to a silicon plastic tube and a cuvette for circulating the blood sample. In addition, the apparatus comprises a PZT piezoelectric transducer integrated with a battery-powered preamplifier to receive the photoacoustic signal. During the experiment, a glucose solution is mixed into a human blood sample to change its concentration. Although the absorption coefficient of glucose is much smaller than that of blood in the near-infrared region, the osmotic and hydrophilic properties of glucose decrease the reduced scattering coefficient of blood caused by the dissolved glucose surrounding the blood cells. This changes the distribution of the absorbed optical energy in blood, which, in turn, produces a change in the photoacoustic signal. Our experiment demonstrates that signal amplitudes in fresh and stored blood samples in crease about 7% and 10%, respectively, when the glucose concentration reaches the upper limit of the physiological region (500 mg/dl).

Analytical characterization of a new mobile X-ray fluorescence and X-ray diffraction instrument combined with a pigment identification case study

NASA Astrophysics Data System (ADS)

Van de Voorde, Lien; Vekemans, Bart; Verhaeven, Eddy; Tack, Pieter; De Wolf, Robin; Garrevoet, Jan; Vandenabeele, Peter; Vincze, Laszlo

2015-08-01

A new, commercially available, mobile system combining X-ray diffraction and X-ray fluorescence has been evaluated which enables both elemental analysis and phase identification simultaneously. The instrument makes use of a copper or molybdenum based miniature X-ray tube and a silicon-Pin diode energy-dispersive detector to count the photons originating from the samples. The X-ray tube and detector are both mounted on an X-ray diffraction protractor in a Bragg-Brentano θ:θ geometry. The mobile instrument is one of the lightest and most compact instruments of its kind (3.5 kg) and it is thus very useful for in situ purposes such as the direct (non-destructive) analysis of cultural heritage objects which need to be analyzed on site without any displacement. The supplied software allows both the operation of the instrument for data collection and in-depth data analysis using the International Centre for Diffraction Data database. This paper focuses on the characterization of the instrument, combined with a case study on pigment identification and an illustrative example for the analysis of lead alloyed printing letters. The results show that this commercially available light-weight instrument is able to identify the main crystalline phases non-destructively, present in a variety of samples, with a high degree of flexibility regarding sample size and position.

Breath analysis using external cavity diode lasers: a review

NASA Astrophysics Data System (ADS)

Bayrakli, Ismail

2017-04-01

Most techniques that are used for diagnosis and therapy of diseases are invasive. Reliable noninvasive methods are always needed for the comfort of patients. Owing to its noninvasiveness, ease of use, and easy repeatability, exhaled breath analysis is a very good candidate for this purpose. Breath analysis can be performed using different techniques, such as gas chromatography mass spectrometry (MS), proton transfer reaction-MS, and selected ion flow tube-MS. However, these devices are bulky and require complicated procedures for sample collection and preconcentration. Therefore, these are not practical for routine applications in hospitals. Laser-based techniques with small size, robustness, low cost, low response time, accuracy, precision, high sensitivity, selectivity, low detection limit, real-time, and point-of-care detection have a great potential for routine use in hospitals. In this review paper, the recent advances in the fields of external cavity lasers and breath analysis for detection of diseases are presented.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Müller, O., E-mail: o.mueller@uni-wuppertal.de; Lützenkirchen-Hecht, D.; Frahm, R.

A fast X-ray chopper capable of producing ms long X-ray pulses with a typical rise time of few μs was realized. It is ideally suited to investigate the temporal response of X-ray detectors with response times of the order of μs to ms, in particular, any kind of ionization chambers and large area photo diodes. The drive mechanism consists of a brushless DC motor and driver electronics from a common hard disk drive, keeping the cost at an absolute minimum. Due to its simple construction and small dimensions, this chopper operates at home lab based X-ray tubes and synchrotron radiationmore » sources as well. The dynamics of the most important detectors used in time resolved X-ray absorption spectroscopy, namely, ionization chambers and Passivated Implanted Planar Silicon photodiodes, were investigated in detail. The results emphasize the applicability of this X-ray chopper.« less

A new telescope concept for space communication

NASA Astrophysics Data System (ADS)

Henneberg, Peter; Schubert, Hermann

1990-07-01

The design concept of an optical transmit-receive antenna telescope developed in the framework of the ESA SILEX program is presented. SILEX involves optical communication between satellites in GEO, using semiconductor laser diodes operating at 825 nm as the light source. The telescope requirements include entrance diameter 250 mm, exit pupil 8 mm, acquisition FOV 8500 microrad, communication FOV 2000 microrad, angular magnification -31.25, retroreflection 3 microW/sq m nm or less, stray light 1.05 microW/sq m nm or less, and alignment stability 10 years with no refocusing in orbit. The present compact two-mirror configuration employs the glass-ceramic Zerodur for all of the major components (primary mirror/baseplate, secondary mirror, tube, front ring, and ocular) for a total mass of only 5760 g. The prototype manufacturing process gave surface errors of 25 nm rms-WF for the primary and 15 nm rms-WF for the secondary.

Mini Photobioreactors for in Vivo Real-Time Characterization and Evolutionary Tuning of Bacterial Optogenetic Circuit.

PubMed

Wang, Hsinkai; Yang, Ya-Tang

2017-09-15

The current standard protocols for characterizing the optogenetic circuit of bacterial cells using flow cytometry in light tubes and light exposure of culture plates are tedious, labor-intensive, and cumbersome. In this work, we engineer a bioreactor with working volume of ∼10 mL for in vivo real-time optogenetic characterization of E. coli with a CcaS-CcaR light-sensing system. In the bioreactor, optical density measurements, reporter protein fluorescence detection, and light input stimuli are provided by four light-emitting diode sources and two photodetectors. Once calibrated, the device can cultivate microbial cells and record their growth and gene expression without human intervention. We measure gene expression during cell growth with different organic substrates (glucose, succinate, acetate, pyruvate) as carbon sources in minimal medium and demonstrate evolutionary tuning of the optogenetic circuit by serial dilution passages.

Direct growth and patterning of multilayer graphene onto a targeted substrate without an external carbon source.

PubMed

Kang, Dongseok; Kim, Won-Jun; Lim, Jung Ah; Song, Yong-Won

2012-07-25

Using only a simple tube furnace, we demonstrate the synthesis of patterned graphene directly on a designed substrate without the need for an external carbon source. Carbon atoms are absorbed onto Ni evaporator sources as impurities, and incorporated into catalyst layers during the deposition. Heat treatment conditions were optimized so that the atoms diffused out along the grain boundaries to form nanocrystals at the catalyst-substrate interfaces. Graphene patterns were obtained under patterned catalysts, which restricted graphene formation to within patterned areas. The resultant multilayer graphene was characterized by Raman spectroscopy and transmission electron microscopy to verify the high crystallinity and two-dimensional nanomorphology. Finally, a metal-semiconductor diode with a catalyst-graphene contact structure were fabricated and characterized to assess the semiconducting properties of the graphene sheets with respect to the display of asymmetric current-voltage behavior.

Uniaxial angular accelerometers

NASA Astrophysics Data System (ADS)

Seleznev, A. V.; Shvab, I. A.

1985-05-01

The basic mechanical components of an angular accelerometer are the sensor, the damper, and the transducer. Penumatic dampers are simplest in construction, but the viscosity of air is very low and, therefore, dampers with special purpose oils having a high temperature stability (synthetic silicon or organosilicon oils) are most widely used. The most common types of viscous dampers are lamellar with meshed opposed arrays of fixed and movable vanes in the dashpot, piston dampers regulated by an adjustable-length capillary tube, and dampers with paddle wheel in closed tank. Another type of damper is an impact-inertial one with large masses absorbing the rotational energy upon collision with the sensor. Conventional measuring elements are resistive, capacitive, electromagnetic, photoelectric, and penumatic or hydraulic. Novel types of angular accelerometers are based on inertia of gas jets, electron beams, and ion beams, the piezoelectric effect in p-n junctions of diode and transistors, the electrokinetic effect in fluids, and cryogenic suspension of the sensor.

LEDs as light source: examining quality of acquired images

NASA Astrophysics Data System (ADS)

Bachnak, Rafic; Funtanilla, Jeng; Hernandez, Jose

2004-05-01

Recent advances in technology have made light emitting diodes (LEDs) viable in a number of applications, including vehicle stoplights, traffic lights, machine-vision-inspection, illumination, and street signs. This paper presents the results of comparing images taken by a videoscope using two different light sources. One of the sources is the internal metal halide lamp and the other is a LED placed at the tip of the insertion tube. Images acquired using these two light sources were quantitatively compared using their histogram, intensity profile along a line segment, and edge detection. Also, images were qualitatively compared using image registration and transformation. The gray-level histogram, edge detection, image profile and image registration do not offer conclusive results. The LED light source, however, produces good images for visual inspection by an operator. The paper will present the results and discuss the usefulness and shortcomings of various comparison methods.

Hard disk drive based microsecond X-ray chopper for characterization of ionization chambers and photodiodes.

PubMed

Müller, O; Lützenkirchen-Hecht, D; Frahm, R

2015-03-01

A fast X-ray chopper capable of producing ms long X-ray pulses with a typical rise time of few μs was realized. It is ideally suited to investigate the temporal response of X-ray detectors with response times of the order of μs to ms, in particular, any kind of ionization chambers and large area photo diodes. The drive mechanism consists of a brushless DC motor and driver electronics from a common hard disk drive, keeping the cost at an absolute minimum. Due to its simple construction and small dimensions, this chopper operates at home lab based X-ray tubes and synchrotron radiation sources as well. The dynamics of the most important detectors used in time resolved X-ray absorption spectroscopy, namely, ionization chambers and Passivated Implanted Planar Silicon photodiodes, were investigated in detail. The results emphasize the applicability of this X-ray chopper.

The electron-optical system of the LIU-2 induction accelerator

NASA Astrophysics Data System (ADS)

Kuznetsov, G. I.; Batazova, M. A.

2014-09-01

The electron-optical system (EOS) of an induction accelerator for generation of an electron beam with an energy of 2 MeV, a current of 2 kA, an impulse duration of 2 × 10-7 s, and a geometric output emittance not exceeding the thermal value of it is described. The EOS consists of two parts. The first part is a diode gun with a perveance of 2 × 10-6 A/B3/2 and a cathode-anode voltage of 1 MeV. The second part is an accelerating tube with uniform distribution of the same accelerating voltage. A beam is transported at a distance of about 4 m from the cathode and focused on a spot with a diameter of about 1 mm. The compliance tests results of the linear-induction accelerator precisely conform to the calculated design parameters.

Emission from Crystals Irradiated with a Beam of Runaway Electrons

NASA Astrophysics Data System (ADS)

Buranchenko, A. G.; Tarasenko, V. F.; Beloplotov, D. V.; Baksht, E. Kh.

2018-01-01

An investigation of the spectral and amplitude-temporal characteristics of emission from different crystals, promising in terms of their application as detectors of runaway electrons, is performed. This emission is excited by subnanosecond electron beams generated in a gas diode. It is found out that at the electron energies of tens-hundreds of kiloelectronvolts, the main contribution into the emission from CsI, ZnS, type IIa artificial and natural diamonds, sapphire, CaF2, ZrO2, Ga2O3, CaCO3, CdS, and ZnSe crystals comes from the cathodoluminescence; the radiation pulse duration depends on the crystal used and sufficiently exceeds the Cherenkov radiation pulse duration. It is demonstrated that the latter radiation exhibits low intensity and can be detected in the short-wave region of the spectrum in the cases where a monochromator and a high-sensitivity photomultiplier tube (PMT) are used.

Ho3+/Yb3+ co-doped TeO2-BaF2-Y2O3 glasses for ∼1.2 μm laser applications

NASA Astrophysics Data System (ADS)

Wang, Shunbin; Li, Chengzhi; Yao, Chuanfei; Jia, Shijie; Jia, Zhixu; Qin, Guanshi; Qin, Weiping

2017-02-01

Intense ∼1.2 μm fluorescence is observed in Ho3+/Yb3+ co-doped TeO2-BaF2-Y2O3 glasses under 915 nm laser diode excitation. The 1.2 μm emission can be ascribed to the transition 5I6→5I8 of Ho3+. With the introducing of BaF2, the content of OH in the glasses drops markedly, and the 1.2 μm emission intensity increases gradually as increasing the concentration percentage of BaF2. Furthermore, microstructured fibers based on the TeO2-BaF2-Y2O3 glasses are fabricated by using a rod-in-tube method, and a relative positive gain of ∼9.42 dB at 1175.3 nm is obtained in a 5 cm long fiber.

A space debris simulation facility for spacecraft materials evaluation

NASA Technical Reports Server (NTRS)

Taylor, Roy A.

1987-01-01

A facility to simulate the effects of space debris striking an orbiting spacecraft is described. This facility was purchased in 1965 to be used as a micrometeoroid simulation facility. Conversion to a Space Debris Simulation Facility began in July 1984 and it was placed in operation in February 1985. The facility consists of a light gas gun with a 12.7-mm launch tube capable of launching 2.5-12.7 mm projectiles with a mass of 4-300 mg and velocities of 2-8 km/sec, and three target tanks of 0.067 m, 0.53 a m and 28.5 a m. Projectile velocity measurements are accomplished via pulsed X-ray, laser diode detectors, and a Hall photographic station. This facility is being used to test development structural configurations and candidate materials for long duration orbital spacecraft. A summary of test results are also described.

Systematic error of diode thermometer.

PubMed

Iskrenovic, Predrag S

2009-08-01

Semiconductor diodes are often used for measuring temperatures. The forward voltage across a diode decreases, approximately linearly, with the increase in temperature. The applied method is mainly the simplest one. A constant direct current flows through the diode, and voltage is measured at diode terminals. The direct current that flows through the diode, putting it into operating mode, heats up the diode. The increase in temperature of the diode-sensor, i.e., the systematic error due to self-heating, depends on the intensity of current predominantly and also on other factors. The results of systematic error measurements due to heating up by the forward-bias current have been presented in this paper. The measurements were made at several diodes over a wide range of bias current intensity.

Monolithic microchannel heatsink

DOEpatents

Benett, W.J.; Beach, R.J.; Ciarlo, D.R.

1996-08-20

A silicon wafer has slots sawn in it that allow diode laser bars to be mounted in contact with the silicon. Microchannels are etched into the back of the wafer to provide cooling of the diode bars. To facilitate getting the channels close to the diode bars, the channels are rotated from an angle perpendicular to the diode bars which allows increased penetration between the mounted diode bars. This invention enables the fabrication of monolithic silicon microchannel heatsinks for laser diodes. The heatsinks have low thermal resistance because of the close proximity of the microchannels to the laser diode being cooled. This allows high average power operation of two-dimensional laser diode arrays that have a high density of laser diode bars and therefore high optical power density. 9 figs.

Monolithic microchannel heatsink

DOEpatents

Benett, William J.; Beach, Raymond J.; Ciarlo, Dino R.

1996-01-01

A silicon wafer has slots sawn in it that allow diode laser bars to be mounted in contact with the silicon. Microchannels are etched into the back of the wafer to provide cooling of the diode bars. To facilitate getting the channels close to the diode bars, the channels are rotated from an angle perpendicular to the diode bars which allows increased penetration between the mounted diode bars. This invention enables the fabrication of monolithic silicon microchannel heatsinks for laser diodes. The heatsinks have low thermal resistance because of the close proximity of the microchannels to the laser diode being cooled. This allows high average power operation of two-dimensional laser diode arrays that have a high density of laser diode bars and therefore high optical power density.

In vitro optical detection of simulated blood pulse in a human tooth pulp model.

PubMed

Niklas, A; Hiller, K-A; Jaeger, A; Brandt, M; Putzger, J; Ermer, C; Schulz, I; Monkman, G; Giglberger, S; Hirmer, M; Danilov, S; Ganichev, S; Schmalz, G

2014-01-01

Noninvasive optical methods such as photoplethysmography, established for blood pulse detection in organs, have been proposed for vitality testing of human dental pulp. However, no information is available on the mechanism of action in a closed pulp chamber and on the impairing influence of other than pulpal blood flow sources. Therefore, the aim of the present in vitro study was to develop a device for the optical detection of pulpal blood pulse and to investigate the influence of different parameters (including gingival blood flow [GBF] simulation) on the derived signals. Air, Millipore water, human erythrocyte suspensions (HES), non-particulate hemoglobin suspension (NPHS), and lysed hemoglobin suspension (LHES) were pulsed through a flexible (silicone) or a rigid (glass) tube placed within an extracted human molar in a tooth-gingiva model. HES was additionally pulsed through a rigid tube around the tooth, simulating GBF alone or combined with the flow through the tooth by two separate peristaltic pumps. Light from high-power light-emitting diodes (625 nm (red) and 940 nm (infrared [IR]); Golden Dragon, Osram, Germany) was introduced to the coronal/buccal part of the tooth, and the signal amplitude [∆U, in volts] of transmitted light was detected by a sensor at the opposite side of the tooth. Signal processing was carried out by means of a newly developed blood pulse detector. Finally, experiments were repeated with the application of rubber dam (blue, purple, pink, and black), aluminum foil, and black antistatic plastic foil. Nonparametric statistical analysis was applied (n = 5; α = 0.05). Signals were obtained for HES and LHES, but not with air, Millipore water, or NPHS. Using a flexible tube, signals for HES were higher for IR compared to red light, whereas for the rigid tube, the signals were significantly higher for red light than for IR. In general, significantly less signal amplitude was recorded for HES with the rigid glass tube than with the flexible tube, but it was still enough to be detected. ∆U from gingiva compared to tooth was significantly lower for red light and higher for IR. Shielding the gingiva was effective for 940 nm light and negligible for 625 nm light. Pulpal blood pulse can be optically detected in a rigid environment such as a pulp chamber, but GBF may interfere with the signal and the shielding effect of the rubber dam depends on the light wavelength used. The optically based recording of blood pulse may be a suitable method for pulp vitality testing, if improvements in the differentiation between different sources of blood pulse are possible.

Method and system for communicating with a laser power driver

DOEpatents

Telford, Steven

2017-07-18

A system for controlling a plurality of laser diodes includes an optical transmitter coupled to the laser diode driver for each laser diode. An optical signal including bi-phase encoded data is provided to each laser diode driver. The optical signal includes current level and pulse duration information at which each of the diodes is to be driven. Upon receiving a trigger signal, the laser diode drivers operate the laser diodes using the current level and pulse duration information to output a laser beam.

A user oriented computer program for the analysis of microwave mixers, and a study of the effects of the series inductance and diode capacitance on the performance of some simple mixers

NASA Technical Reports Server (NTRS)

Siegel, P. H.; Kerr, A. R.

1979-01-01

A user oriented computer program for analyzing microwave and millimeter wave mixers with a single Schottky barrier diode of known I-V and C-V characteristics is described. The program first performs a nonlinear analysis to determine the diode conductance and capacitance waveforms produced by the local oscillator. A small signal linear analysis is then used to find the conversion loss, port impedances, and input noise temperature of the mixer. Thermal noise from the series resistance of the diode and shot noise from the periodically pumped current in the diode conductance are considered. The effects of the series inductance and diode capacitance on the performance of some simple mixer circuits using a conventional Schottky diode, a Schottky diode in which there is no capacitance variation, and a Mott diode are studied. It is shown that the parametric effects of the voltage dependent capacitance of a conventional Schottky diode may be either detrimental or beneficial depending on the diode and circuit parameters.

Hybrid electroluminescent devices

DOEpatents

Shiang, Joseph John; Duggal, Anil Raj; Michael, Joseph Darryl

2010-08-03

A hybrid electroluminescent (EL) device comprises at least one inorganic diode element and at least one organic EL element that are electrically connected in series. The absolute value of the breakdown voltage of the inorganic diode element is greater than the absolute value of the maximum reverse bias voltage across the series. The inorganic diode element can be a power diode, a Schottky barrier diode, or a light-emitting diode.

Electronic analog divider

NASA Technical Reports Server (NTRS)

Birchenough, A. G. (Inventor)

1977-01-01

Advantage is taken of the current-exponential voltage characteristic of a diode over a certain range whereby the incremental impedance across the diode is inversely proportional to the current through the diode. Accordingly, a divider circuit employs a bias current through the diode proportional to the desired denominator and applies an incremental current to the diode proportional to the numerator. The incremental voltage across the diode is proportional to the quotient.

A comparison of commercial light-emitting diode baited suction traps for surveillance of Culicoides in northern Europe.

PubMed

Hope, Andrew; Gubbins, Simon; Sanders, Christopher; Denison, Eric; Barber, James; Stubbins, Francesca; Baylis, Matthew; Carpenter, Simon

2015-04-22

The response of Culicoides biting midges (Diptera: Ceratopogonidae) to artificial light sources has led to the use of light-suction traps in surveillance programmes. Recent integration of light emitting diodes (LED) in traps improves flexibility in trapping through reduced power requirements and also allows the wavelength of light used for trapping to be customized. This study investigates the responses of Culicoides to LED light-suction traps emitting different wavelengths of light to make recommendations for use in surveillance. The abundance and diversity of Culicoides collected using commercially available traps fitted with Light Emitting Diode (LED) platforms emitting ultraviolet (UV) (390 nm wavelength), blue (430 nm), green (570 nm), yellow (590 nm), red (660 nm) or white light (425 nm - 750 nm with peaks at 450 nm and 580 nm) were compared. A Centre for Disease Control (CDC) UV light-suction trap was also included within the experimental design which was fitted with a 4 watt UV tube (320-420 nm). Generalised linear models with negative binomial error structure and log-link function were used to compare trap abundance according to LED colour, meteorological conditions and seasonality. The experiment was conducted over 49 nights with 42,766 Culicoides caught in 329 collections. Culicoides obsoletus Meigen and Culicoides scoticus Downes and Kettle responded indiscriminately to all wavelengths of LED used with the exception of red which was significantly less attractive. In contrast, Culicoides dewulfi Goetghebuer and Culicoides pulicaris Linnaeus were found in significantly greater numbers in the green LED trap than in the UV LED trap. The LED traps collected significantly fewer Culicoides than the standard CDC UV light-suction trap. Catches of Culicoides were reduced in LED traps when compared to the standard CDC UV trap, however, their reduced power requirement and small size fulfils a requirement for trapping in logistically challenging areas or where many traps are deployed at a single site. Future work should combine light wavelengths to improve trapping sensitivity and potentially enable direct comparisons with collections from hosts, although this may ultimately require different forms of baits to be developed.

TU-H-CAMPUS-TeP2-04: Measurement of Stereotactic Output Factors with DNA Double-Strand Breaks

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cline, K; Obeidat, M; Stathakis, S

Purpose: Radiotherapy treatment is specified by radiation dose prescriptions, but biological DNA damage actually controls treatment effectiveness. It is impractical to directly measure dose in the clinic, so we measure quantities, such as collected charge, and calculate the relationship to dose. At small fields, such as those in stereotactic radiosurgery (SRS), charged-particle equilibrium (CPE) breaks down and the accuracy of the measurement for delivered dose decreases. By measuring DNA double-strand breaks (DSB) directly, we believe treatment accuracy could improve by providing a more meaningful measurement. Methods: A DNA dosimeter, consisting of magnetic streptavidin beads attached to 4 kilobase pair DNAmore » strands labeled with biotin and fluorescein amidite (FAM) on opposing ends, was suspended in phosphate-buffered saline (PBS). Twenty µL samples were placed in plastic micro-capillary tubes inside a water tank setup and irradiated with 10 cm, 3 cm, 1.25 cm, 0.75 cm, and 0.5 cm radiation field sizes, where the three smallest sizes were cones. After irradiation, the dosimeters were mechanically separated into beads (intact DNA) and supernatant (broken DNA/FAM) using a magnet. The fluorescence was read and the probability of DSB was calculated. This was used to calculate the output factor for an SRS beam and compared to that measured using a diode detector. Results: The output factors relative to a 10 cm field were 0.89±0.07, 0.76±0.08, 0.59±0.04, and 0.78±0.12 for the field sizes of 3 cm, 1.25 cm, 0.75 cm, and 0.5 cm, respectively. Some of the diode measurements do not fall within these uncertainties. Conclusion: This was the first attempt to measure output factors in a water tank with the DNA dosimeter. Although differences compared to the diode were observed, the uncertainty analysis ignored systematic errors. For future work, we will repeat this experiment to quantify and correct systematic errors, such as those caused by positional alignment and sample contamination. This work was funded in part by CPRIT (RP140105).« less

Detonation control

DOEpatents

Mace, Jonathan L.; Seitz, Gerald J.; Bronisz, Lawrence E.

2016-10-25

Detonation control modules and detonation control circuits are provided herein. A trigger input signal can cause a detonation control module to trigger a detonator. A detonation control module can include a timing circuit, a light-producing diode such as a laser diode, an optically triggered diode, and a high-voltage capacitor. The trigger input signal can activate the timing circuit. The timing circuit can control activation of the light-producing diode. Activation of the light-producing diode illuminates and activates the optically triggered diode. The optically triggered diode can be coupled between the high-voltage capacitor and the detonator. Activation of the optically triggered diode causes a power pulse to be released from the high-voltage capacitor that triggers the detonator.

Arbitrary waveform generator to improve laser diode driver performance

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fulkerson, Jr, Edward Steven

2015-11-03

An arbitrary waveform generator modifies the input signal to a laser diode driver circuit in order to reduce the overshoot/undershoot and provide a "flat-top" signal to the laser diode driver circuit. The input signal is modified based on the original received signal and the feedback from the laser diode by measuring the actual current flowing in the laser diode after the original signal is applied to the laser diode.

SiC-Based Schottky Diode Gas Sensors

NASA Technical Reports Server (NTRS)

Hunter, Gary W.; Neudeck, Philip G.; Chen, Liang-Yu; Knight, Dak; Liu, Chung-Chiun; Wu, Quing-Hai

1997-01-01

Silicon carbide based Schottky diode gas sensors are being developed for high temperature applications such as emission measurements. Two different types of gas sensitive diodes will be discussed in this paper. By varying the structure of the diode, one can affect the diode stability as well as the diode sensitivity to various gases. It is concluded that the ability of SiC to operate as a high temperature semiconductor significantly enhances the versatility of the Schottky diode gas sensing structure and will potentially allow the fabrication of a SiC-based gas sensor arrays for versatile high temperature gas sensing applications.

Geologic fracturing method and resulting fractured geologic structure

DOEpatents

Mace, Jonathan L.; Bradley, Christopher R.; Greening, Doran R.; Steedman, David W.

2016-11-08

Detonation control modules and detonation control circuits are provided herein. A trigger input signal can cause a detonation control module to trigger a detonator. A detonation control module can include a timing circuit, a light-producing diode such as a laser diode, an optically triggered diode, and a high-voltage capacitor. The trigger input signal can activate the timing circuit. The timing circuit can control activation of the light-producing diode. Activation of the light-producing diode illuminates and activates the optically triggered diode. The optically triggered diode can be coupled between the high-voltage capacitor and the detonator. Activation of the optically triggered diode causes a power pulse to be released from the high-voltage capacitor that triggers the detonator.

Photovoltaic module bypass diode encapsulation

NASA Technical Reports Server (NTRS)

Shepard, N. J., Jr.

1983-01-01

The design and processing techniques necessary to incorporate bypass diodes within the module encapsulant are presented. The Semicon PN junction diode cells were selected. Diode junction to heat spreader thermal resistance measurements, performed on a variety of mounted diode chip types and sizes, have yielded values which are consistently below 1 deg C per watt, but show some instability when thermally cycled over the temperature range from -40 to 150 deg C. Three representative experimental modules, each incorporating integral bypass diode/heat spreader assemblies of various sizes, were designed. Thermal testing of these modules enabled the formulation of a recommended heat spreader plate sizing relationship. The production cost of three encapsulated bypass diode/heat spreader assemblies were compared with similarly rated externally mounted packaged diodes. It is concluded that, when proper designed and installed, these bypass diode devices will improve the overall reliability of a terrestrial array over a 20 year design lifetime.

Plasma-filled applied B ion diode experiments using a plasma opening switch

DOE Office of Scientific and Technical Information (OSTI.GOV)

Renk, T.J.

1994-12-15

In order for a plasma opening switch (POS) to open quickly and transfer power efficiently from an inductively charged vacuum transmission line to an applied B ion diode, the load impedance of the ion diode may be required to have an initial low impedance phase. A plasma-filled diode has such an impedance history. To test the effect of a plasma-filled diode on POS-diode coupling, a drifting plasma was introduced from the cathode side of an applied B ion diode operated on the LION accelerator (1.5 MV, 4 [Omega], 40 ns) at Cornell University. This plasma readily crossed the 2.1 Tmore » magnetic insulation field of the diode, and resulted in both increased diode electrical power, and an increased ability of the ion beam to remove material from a target. The plasma did not appear to have a noticeable effect on local beam steering angle.« less

Cryogenic Testing of High Current By-Pass Diode Stacks for the Protection of the Superconducting Magnets in the LHC

NASA Astrophysics Data System (ADS)

Gharib, A.; Hagedorn, D.; Della Corte, A.; Fiamozzi Zignani, C.; Turtu, S.; Brown, D.; Rout, C.

2004-06-01

For the protection of the LHC superconducting magnets, about 2100 specially developed by-pass diodes were manufactured by DYNEX SEMICONDUCTOR LTD (Lincoln, GB) and about 1300 of these diodes were mounted into diode stacks and submitted to tests at cryogenic temperatures. To date about 800 dipole diode stacks and about 250 quadrupole diode stacks for the protection of the superconducting lattice dipole and lattice quadrupole magnets have been assembled at OCEM (Bologna,Italy) and successfully tested in liquid helium at ENEA (Frascati, Italy). This report gives an overview of the test results obtained so far. After a short description of the test installations and test procedures, a statistical analysis is presented for test data during diode production as well as for the performance of the diode stacks during testing in liquid helium, including failure rates and degradation of the diodes.

Dosimetric characteristics of a PIN diode for radiotherapy application.

PubMed

Kumar, R; Sharma, S D; Philomina, A; Topkar, A

2014-08-01

The PIN diode developed by Bhabha Atomic Research Centre (BARC) was modified for its use as a dosimeter in radiation therapy. For this purpose the diode was mounted on a printed circuit board (PCB) and provided with necessary connections so that its response against irradiation can be recorded by a standard radiotherapy electrometer. The dosimetric characteristics of the diode were studied in Co-60 gamma rays as well as high energy X-rays. The measured sensitivity of this PIN diode is 4 nC/cGy which is about ten times higher than some commercial diode dosimeters. The leakage current from the diode is 0.04 nA. The response of the PIN diode is linear in the range of 20-1000 cGy which covers the full range of radiation dose encountered in radiotherapy treatments. The non-linearity of the diode response is 3.5% at 20 cGy and it is less than 1.5% at higher dose values. Its repeatability is within 0.5%. The angular response variation is about 5.6% within 6608 with respect to normal beam incidence. The response of the PIN diode at 6 and 18 MV X-rays varies within 2% with respect to its response at Co-60 gamma rays. The source to surface distance (SSD) dependence of the PIN diode was studied for Co-60 beam. It was found that the response of the diode decreases almost linearly relative to given dose for beams with constant collimator setting but increasing SSD (decreasing dose-rate). Within this study the diode response varied by about 2.5% between the maximum and minimum SSD. The dose-rate dependence of the PIN diode for 6 and 15 MV-rays was studied. The variation in response of diode for both energies in the studied dose range is less than 1%. The field size dependence of the PIN diode response is within 1% with respect to the response of ionisation chamber. These studies indicate that the characteristics of the PIN diode are suitable for use in radiotherapy dosimetry.

Dynamics of falling droplet and elongational properties of dilute nonionic surfactant solutions with drag-reducing ability

NASA Astrophysics Data System (ADS)

Tamano, Shinji; Ohashi, Yota; Morinishi, Yohei

2017-05-01

The dynamics of the falling droplet through a nozzle for dilute nonionic surfactant (oleyl-dimethylamine oxide, ODMAO) aqueous solutions with viscoelastic and drag-reducing properties were investigated at different concentrations of ODMAO solutions Cs = 500, 1000, and 1500 ppm by weight. The effects of the flow rate and tube outer diameter on the length of the filament, which was the distance between the tube exit and the lower end of a droplet at the instant when the droplet almost detached from the tube, were clarified by flow visualization measurements by a high-speed video camera. Two types of breaking-off processes near the base of the droplet and within the filament were classified by the Ohnesorge number Oh and the Weber number We. In the regime of the higher Oh and We, the length of the filament became drastically larger at Cs = 1000 and 1500 ppm, whose high spinnability represented the strong viscoelasticity of ODMAO solutions. In the case where the filament was broken up near the lower end of the neck and thinning in time, the thinning of the diameter of the filament was measured by a light-emitting diode micrometer. As for the elasto-capillary thinning of dilute nonionic surfactant solutions, the initial necking process was similar to that of Newtonian fluids and then followed the exponential thinning like polymer solutions. The apparent elongational viscosity of the dilute nonionic surfactant solution was evaluated in the elasto-capillary thinning regime, in which the elongation rate was almost constant. At Cs = 1000 and 1500 ppm, the Trouton ratio, which was the ratio of the apparent elongational viscosity to the shear viscosity, was found to be several orders of magnitude larger than that of Newtonian fluids, while the shear viscosity measured by the capillary viscometer was almost the same order of the Newtonian fluids. The higher elongational property would be closely related to the higher drag-reducing ability of dilute nonionic surfactant solutions.

Towards a disposable in vivo miniature implantable fluorescence detector

NASA Astrophysics Data System (ADS)

Bellis, Stephen; Jackson, J. Carlton; Mathewson, Alan

2006-02-01

In the field of fluorescent microscopy, neuronal activity, diabetes and drug treatment are a few of the wide ranging biomedical applications that can be monitored with the use of dye markers. Historically, in-vivo fluorescent detectors consist of implantable probes coupled by optical fibre to sophisticated bench-top instrumentation. These systems typically use laser light to excite the fluorescent marker dies and using sensors, such as the photo-multiplier tube (PMT) or charge coupled devices (CCD), detect the fluorescent light that is filtered from the total excitation. Such systems are large and expensive. In this paper we highlight the first steps toward a fully implantable in-vivo fluorescence detection system. The aim is to make the detector system small, low cost and disposable. The current prototype is a hybrid platform consisting of a vertical cavity surface emitting laser (VCSEL) to provide the excitation and a filtered solid state Geiger mode avalanche photo-diode (APD) to detect the emitted fluorescence. Fluorescence detection requires measurement of extremely low levels of light so the proposed APD detectors combine the ability to count individual photons with the added advantage of being small in size. At present the exciter and sensor are mounted on a hybrid PCB inside a 3mm diameter glass tube.This is wired to external electronics, which provide quenching, photon counting and a PC interface. In this configuration, the set-up can be used for in-vitro experimentation and in-vivo analysis conducted on animals such as mice.

Enhanced Thermionic Emission and Low 1/f Noise in Exfoliated Graphene/GaN Schottky Barrier Diode.

PubMed

Kumar, Ashutosh; Kashid, Ranjit; Ghosh, Arindam; Kumar, Vikram; Singh, Rajendra

2016-03-01

Temperature-dependent electrical transport characteristics of exfoliated graphene/GaN Schottky diodes are investigated and compared with conventional Ni/GaN Schottky diodes. The ideality factor of graphene/GaN and Ni/GaN diodes are measured to be 1.33 and 1.51, respectively, which is suggestive of comparatively higher thermionic emission current in graphene/GaN diode. The barrier height values for graphene/GaN diode obtained using thermionic emission model and Richardson plots are found to be 0.60 and 0.72 eV, respectively, which are higher than predicted barrier height ∼0.40 eV as per the Schottky-Mott model. The higher barrier height is attributed to hole doping of graphene due to graphene-Au interaction which shifts the Fermi level in graphene by ∼0.3 eV. The magnitude of flicker noise of graphene/GaN Schottky diode increases up to 175 K followed by its decrease at higher temperatures. This indicates that diffusion currents and barrier inhomogeneities dominate the electronic transport at lower and higher temperatures, respectively. The exfoliated graphene/GaN diode is found to have lower level of barrier inhomogeneities than conventional Ni/GaN diode, as well as earlier reported graphene/GaN diode fabricated using chemical vapor deposited graphene. The lesser barrier inhomogeneities in graphene/GaN diode results in lower flicker noise by 2 orders of magnitude as compared to Ni/GaN diode. Enhanced thermionic emission current, lower level of inhomogeneities, and reduced flicker noise suggests that graphene-GaN Schottky diodes may have the underlying trend for replacing metal-GaN Schottky diodes.

CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES: A super junction SiGe low-loss fast switching power diode

NASA Astrophysics Data System (ADS)

Ma, Li; Gao, Yong

2009-01-01

This paper proposes a novel super junction (SJ) SiGe switching power diode which has a columnar structure of alternating p- and n- doped pillar substituting conventional n- base region and has far thinner strained SiGe p+ layer to overcome the drawbacks of existing Si switching power diode. The SJ SiGe diode can achieve low specific on-resistance, high breakdown voltages and fast switching speed. The results indicate that the forward voltage drop of SJ SiGe diode is much lower than that of conventional Si power diode when the operating current densities do not exceed 1000 A/cm2, which is very good for getting lower operating loss. The forward voltage drop of the Si diode is 0.66 V whereas that of the SJ SiGe diode is only 0.52 V at operating current density of 10 A/cm2. The breakdown voltages are 203 V for the former and 235 V for the latter. Compared with the conventional Si power diode, the reverse recovery time of SJ SiGe diode with 20 per cent Ge content is shortened by above a half and the peak reverse current is reduced by over 15%. The SJ SiGe diode can remarkably improve the characteristics of power diode by combining the merits of both SJ structure and SiGe material.

Investigation on emission characteristics of metal-ceramic cathode applied to industrial X-ray diode.

PubMed

Xun, Ma; Jianqiang, Yuan; Hongwei, Liu; Hongtao, Li; Lingyun, Wang; Ping, Jiang

2016-06-01

The industrial x-ray diode with high impedance configuration is usually adopted to generate repetitive x-ray, but its performance would be worsened due to lower electric field on the cathode of diode when a voltage of several hundreds of kV is applied. To improve its performance, a novel metal-ceramic cathode is proposed in this paper. Key factors (width, relative permittivity of ceramic, and so on) affecting electric field distribution on triple points are analyzed by electrostatic field calculation program, so as to optimize the design of this novel cathode. Experiments are done to study the characteristics including emission current of cathode, diode voltage duration, diode mean dynamic impedance, and diode impedance drop velocity within diode power duration. The results show that metal-ceramic cathode could improve diode performance by enhancing emission current and stabling impedance; the impedance drop velocity of diode with spoke-shaped metal-ceramic cathode was reduced to -5 Ω ns(-1) within diode power duration, comparing to -15 Ω ns(-1) with metal foil cathode.

The Beam Characteristics of High Power Diode Laser Stack

NASA Astrophysics Data System (ADS)

Gu, Yuanyuan; Fu, Yueming; Lu, Hui; Cui, Yan

2018-03-01

Direct diode lasers have some of the most attractive features of any laser. They are very efficient, compact, wavelength versatile, low cost, and highly reliable. However, the full utilization of direct diode lasers has yet to be realized. However, the poor quality of diode laser beam itself, directly affect its application ranges, in order to better use of diode laser stack, need a proper correction of optical system, which requires accurate understanding of the diode laser beam characteristics. Diode laser could make it possible to establish the practical application because of rectangular beam patterns which are suitable to make fine bead with less power. Therefore diode laser cladding will open a new field of repairing for the damaged machinery parts which must contribute to recycling of the used machines and saving of cost.

Silicon Carbide Diodes Characterization at High Temperature and Comparison With Silicon Devices

NASA Technical Reports Server (NTRS)

Lebron-Velilla, Ramon C.; Schwarze, Gene E.; Gardner, Brent G.; Adams, Jerry D., Jr.

2004-01-01

Commercially available silicon carbide (SiC) Schottky diodes from different manufacturers rated at 200, 300, 600, and 1200 V, were electrically tested and characterized as a function of temperature up to 300 C. Electrical tests included both steady state and dynamic tests. Steady state tests produced forward and reverse I-V characteristic curves. Transient tests evaluated the switching performance of the diodes in either a hard-switched DC to DC buck converter or a half-bridge boost converter. For evaluation and comparison purposes, the same tests were performed with current state-of-the-art ultra fast silicon (Si) pn-junction diodes of similar ratings and also a Si Schottky diode. The comparisons made were forward voltage drop at rated current, reverse current at rated voltage, and turn-off peak reverse recovery current and reverse recovery time. In addition, efficiency measurements were taken for the buck DC to DC converter using both the SiC Schottky diodes and the Si pn-junction diodes at different temperatures and frequencies. The test results showed that at high temperature, the forward voltage drop for SiC Schottky diodes is higher than the forward drop of the ultra fast Si pn-junction diodes. As the temperature increased, the forward voltage drop of the SiC Schottky increased while for the ultra fast Si pn-junction diodes, the forward voltage drop decreased as temperature increased. For the elevated temperature steady state reverse voltage tests, the SiC Schottky diodes showed low leakage current at their rated voltage. Likewise, for the transient tests, the SiC Schottky diodes displayed low reverse recovery currents over the range of temperatures tested. Conversely, the Si pn-junction diodes showed increasing peak reverse current values and reverse recovery times with increasing temperature. Efficiency measurements in the DC to DC buck converter showed the advantage of the SiC Schottky diodes over the ultra fast Si pn-junction diodes, especially at the higher temperatures and higher frequencies.

Qualification and Selection of Flight Diode Lasers for Space Applications

NASA Technical Reports Server (NTRS)

Liebe, Carl C.; Dillon, Robert P.; Gontijo, Ivair; Forouhar, Siamak; Shapiro, Andrew A.; Cooper, Mark S.; Meras, Patrick L.

2010-01-01

The reliability and lifetime of laser diodes is critical to space missions. The Nuclear Spectroscopic Telescope Array (NuSTAR) mission includes a metrology system that is based upon laser diodes. An operational test facility has been developed to qualify and select, by mission standards, laser diodes that will survive the intended space environment and mission lifetime. The facility is situated in an electrostatic discharge (ESD) certified clean-room and consist of an enclosed temperature-controlled stage that can accommodate up to 20 laser diodes. The facility is designed to characterize a single laser diode, in addition to conducting laser lifetime testing on up to 20 laser diodes simultaneously. A standard laser current driver is used to drive a single laser diode. Laser diode current, voltage, power, and wavelength are measured for each laser diode, and a method of selecting the most adequate laser diodes for space deployment is implemented. The method consists of creating histograms of laser threshold currents, powers at a designated current, and wavelengths at designated power. From these histograms, the laser diodes that illustrate a performance that is outside the normal are rejected and the remaining lasers are considered spaceborne candidates. To perform laser lifetime testing, the facility is equipped with 20 custom laser drivers that were designed and built by California Institute of Technology specifically to drive NuSTAR metrology lasers. The laser drivers can be operated in constant-current mode or alternating-current mode. Situated inside the enclosure, in front of the laser diodes, are 20 power-meter heads to record laser power throughout the duration of lifetime testing. Prior to connecting a laser diode to the current source for characterization and lifetime testing, a background program is initiated to collect current, voltage, and resistance. This backstage data collection enables the operational test facility to have full laser diode traceablity.

Means for phase locking the outputs of a surface emitting laser diode array

NASA Technical Reports Server (NTRS)

Lesh, James R. (Inventor)

1987-01-01

An array of diode lasers, either a two-dimensional array of surface emitting lasers, or a linear array of stripe lasers, is phase locked by a diode laser through a hologram which focuses the output of the diode laser into a set of distinct, spatially separated beams, each one focused onto the back facet of a separate diode laser of the array. The outputs of the diode lasers thus form an emitted coherent beam out of the front of the array.

Can small field diode correction factors be applied universally?

PubMed

Liu, Paul Z Y; Suchowerska, Natalka; McKenzie, David R

2014-09-01

Diode detectors are commonly used in dosimetry, but have been reported to over-respond in small fields. Diode correction factors have been reported in the literature. The purpose of this study is to determine whether correction factors for a given diode type can be universally applied over a range of irradiation conditions including beams of different qualities. A mathematical relation of diode over-response as a function of the field size was developed using previously published experimental data in which diodes were compared to an air core scintillation dosimeter. Correction factors calculated from the mathematical relation were then compared those available in the literature. The mathematical relation established between diode over-response and the field size was found to predict the measured diode correction factors for fields between 5 and 30 mm in width. The average deviation between measured and predicted over-response was 0.32% for IBA SFD and PTW Type E diodes. Diode over-response was found to be not strongly dependent on the type of linac, the method of collimation or the measurement depth. The mathematical relation was found to agree with published diode correction factors derived from Monte Carlo simulations and measurements, indicating that correction factors are robust in their transportability between different radiation beams. Copyright © 2014. Published by Elsevier Ireland Ltd.

Spectral perturbations from silicon diode detector encapsulation and shielding in photon fields.

PubMed

Eklund, Karin; Ahnesjö, Anders

2010-11-01

Silicon diodes are widely used as detectors for relative dose measurements in radiotherapy. The common manufacturing practice is to encapsulate the diodes in plastic for protection and to facilitate mounting in scanning devices. Diodes intended for use in photon fields commonly also have a shield of a high atomic number material (usually tungsten) integrated into the encapsulation to selectively absorb low-energy photons to which silicon diodes would otherwise over-response. However, new response models based on cavity theories and spectra calculations have been proposed for direct correction of the readout from unshielded (e.g., "electron") diodes used in photon fields. This raises the question whether it is correct to assume that the spectrum in a water phantom at the location of the detector cavity is not perturbed by the detector encapsulation materials. The aim of this work is to investigate the spectral effects of typical encapsulations, including shielding, used for clinical diodes. The effects of detector encapsulation of an unshielded and a shielded commercial diode on the spectra at the detector cavity location are studied through Monte Carlo simulations with PENELOPE-2005. Variance reduction based on correlated sampling is applied to reduce the CPU time needed for the simulations. The use of correlated sampling is found to be efficient and to not introduce any significant bias to the results. Compared to reference spectra calculated in water, the encapsulation for an unshielded diode is demonstrated to not perturb the spectrum, while a tungsten shielded diode caused not only the desired decrease in low-energy scattered photons but also a large increase of the primary electron fluence. Measurements with a shielded diode in a 6 MV photon beam proved that the shielding does not completely remove the field-size dependence of the detector response caused by the over-response from low-energy photons. Response factors of a properly corrected unshielded diode were shown to give comparable, or better, results than the traditionally used shielded diode. Spectra calculated for photon fields in water can be directly used for modeling the response of unshielded silicon diodes with plastic encapsulations. Unshielded diodes used together with appropriate corrections can replace shielded diodes in photon dose measurements.

Checker Takes the Guesswork out of Diode Identification

ERIC Educational Resources Information Center

Harman, Charles

2011-01-01

At technical colleges and secondary-level tech schools, students enrolled in basic electronics labs who have learned about diodes that do rectification are used to seeing power diodes like the 1N4001. When the students are introduced to low-power zener diodes and signal diodes, component identification gets more complex. If the small zeners are…

CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES: Research on reverse recovery characteristics of SiGeC p-i-n diodes

NASA Astrophysics Data System (ADS)

Gao, Yong; Liu, Jing; Yang, Yuan

2008-12-01

This paper analyses the reverse recovery characteristics and mechanism of SiGeC p-i-n diodes. Based on the integrated systems engineering (ISE) data, the critical physical models of SiGeC diodes are proposed. Based on hetero-junction band gap engineering, the softness factor increases over six times, reverse recovery time is over 30% short and there is a 20% decrease in peak reverse recovery current for SiGeC diodes with 20% of germanium and 0.5% of carbon, compared to Si diodes. Those advantages of SiGeC p-i-n diodes are more obvious at high temperature. Compared to lifetime control, SiGeC technique is more suitable for improving diode properties and the tradeoff between reverse recovery time and forward voltage drop can be easily achieved in SiGeC diodes. Furthermore, the high thermal-stability of SiGeC diodes reduces the costs of further process steps and offers more freedoms to device design.

Digital control of diode laser for atmospheric spectroscopy

NASA Technical Reports Server (NTRS)

Menzies, R. T.; Rutledge, C. W. (Inventor)

1985-01-01

A system is described for remote absorption spectroscopy of trace species using a diode laser tunable over a useful spectral region of 50 to 200 cm(-1) by control of diode laser temperature over range from 15 K to 100 K, and tunable over a smaller region of typically 0.1 to 10 cm(-1) by control of the diode laser current over a range from 0 to 2 amps. Diode laser temperature and current set points are transmitted to the instrument in digital form and stored in memory for retrieval under control of a microprocessor during measurements. The laser diode current is determined by a digital to analog converter through a field effect transistor for a high degree of ambient temperature stability, while the laser diode temperature is determined by set points entered into a digital to analog converter under control of the microprocessor. Temperature of the laser diode is sensed by a sensor diode to provide negative feedback to the temperature control circuit that responds to the temperature control digital to analog converter.

Barrier inhomogeneities limited current and 1/f noise transport in GaN based nanoscale Schottky barrier diodes

PubMed Central

Kumar, Ashutosh; Heilmann, M.; Latzel, Michael; Kapoor, Raman; Sharma, Intu; Göbelt, M.; Christiansen, Silke H.; Kumar, Vikram; Singh, Rajendra

2016-01-01

The electrical behaviour of Schottky barrier diodes realized on vertically standing individual GaN nanorods and array of nanorods is investigated. The Schottky diodes on individual nanorod show highest barrier height in comparison with large area diodes on nanorods array and epitaxial film which is in contrast with previously published work. The discrepancy between the electrical behaviour of nanoscale Schottky diodes and large area diodes is explained using cathodoluminescence measurements, surface potential analysis using Kelvin probe force microscopy and 1ow frequency noise measurements. The noise measurements on large area diodes on nanorods array and epitaxial film suggest the presence of barrier inhomogeneities at the metal/semiconductor interface which deviate the noise spectra from Lorentzian to 1/f type. These barrier inhomogeneities in large area diodes resulted in reduced barrier height whereas due to the limited role of barrier inhomogeneities in individual nanorod based Schottky diode, a higher barrier height is obtained. PMID:27282258

Bypass diode integration

NASA Technical Reports Server (NTRS)

Shepard, N. F., Jr.

1981-01-01

Protective bypass diodes and mounting configurations which are applicable for use with photovoltaic modules having power dissipation requirements in the 5 to 50 watt range were investigated. Using PN silicon and Schottky diode characterization data on packaged diodes and diode chips, typical diodes were selected as representative for each range of current carrying capacity, an appropriate heat dissipating mounting concept along with its environmental enclosure was defined, and a thermal analysis relating junction temperature as a function of power dissipation was performed. In addition, the heat dissipating mounting device dimensions were varied to determine the effect on junction temperature. The results of the analysis are presented as a set of curves indicating junction temperature as a function of power dissipation for each diode package.

Commissioning a p-type silicon diode for use in clinical electron beams.

PubMed

Eveling, J N; Morgan, A M; Pitchford, W G

1999-01-01

Commissioning measurements were carried out on a p-type silicon diode detector for use in patient monitoring in high energy electron beams. Characteristics specific to the diode were examined. The variation in diode sensitivity with dose per pulse was found to be less than 1% over a range 0.069-0.237 mGy/pulse. The diode exhibited a sensitivity variation with accumulated dose of 10% per kGy and a sensitivity variation with surface temperature of 0.26%/degree C. The dependence of the diode response on the direction of the incident electron beam was investigated. Results were found to exceed the manufacturer's specifications. Output factors measured with the diode agree to within 1.5% of those measured with an NACP-02 air ionization chamber. The detector showed a variation in response with energy of 0.8% over the energy range 4-15 MeV. Prior to introducing the diode into clinical use, an assessment of beam perturbation directly behind the diode was made. The maximum reduction in local dose directly behind the diode at a depth of 1.0 cm below the surface was approximately 13% at 4 and 15 MeV.

SU-E-T-376: Evaluation of a New Stereotactic Diode for Small Field Dosimetry

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kralik, J; Kosterin, P; Mooij, R

2015-06-15

Purpose: To evaluate the performance of a new stereotactic diode for dosimetry of small photon fields. Methods: A new stereotactic diode, consisting of an unshielded p-type silicon chip, and with improved radiation hardness energy dependence was recently developed (IBA Dosimetry, Schwarzenbruch, Germany). The diode has an active volume of 0.6 mm dia. x 0.02 mm thick. Two new diodes were evaluated, one which was pre-irradiated to 100kGy with 10 MeV electrons and another which received no prior irradiation. Sensitivity, stability, reproducibility, and linearity as a function of dose were assessed. Beam profiles and small field output factors were measured onmore » a CyberKnife (CK) and compared with measurements using two commercially available diodes. Results: The new diodes exhibit linear behavior (within 0.6%) over a dose range 0.02 – 50 Gy; a commercially available device exhibits excursions of up to 4% over the same range. The sensitivity is 4.1 and 3.8 nC/Gy for the un-irradiated and pre-irradiated diodes, respectively. When irradiated with 150 Gy in dose increments of 5, 20 and 35 Gy, both new diodes provide a stable response within 0.5%. Output factors measured with the two new diodes are identical and compare favorably with other commercially available diodes and published data. Similarly, no differences in measured field size or penumbra were observed among the devices tested. Conclusion: The new diodes show excellent stability and sensitivity. The beam characterization in terms of output factors and beam profiles is consistent with that obtained with commercially available diodes.« less

High-efficiency V-band GaAs IMPATT diodes

NASA Technical Reports Server (NTRS)

Ma, Y. E.; Benko, E.; Trinh, T.; Erickson, L. P.; Mattord, T. J.

1984-01-01

Double-drift GaAs IMPATT diodes were designed for V-band frequency operations and fabricated using molecular-beam epitaxy. The diodes were fabricated in two configurations: (1) circular mesa diodes with silver-plated (integrated) heat sinks: (2) pill-type diodes bonded to diamond heat sinks. Both configurations utilized a miniature quartz-ring package. Output power greater than 1 W CW was achieved at V-band frequencies from diodes on diamond heat sinks. The best conversion efficiency was 13.3 percent at 55.5 GHz with 1 W output power.

Laser Diode Ignition (LDI)

NASA Technical Reports Server (NTRS)

Kass, William J.; Andrews, Larry A.; Boney, Craig M.; Chow, Weng W.; Clements, James W.; Merson, John A.; Salas, F. Jim; Williams, Randy J.; Hinkle, Lane R.

1994-01-01

This paper reviews the status of the Laser Diode Ignition (LDI) program at Sandia National Labs. One watt laser diodes have been characterized for use with a single explosive actuator. Extensive measurements of the effect of electrostatic discharge (ESD) pulses on the laser diode optical output have been made. Characterization of optical fiber and connectors over temperature has been done. Multiple laser diodes have been packaged to ignite multiple explosive devices and an eight element laser diode array has been recently tested by igniting eight explosive devices at predetermined 100 ms intervals.

Operation of a high impedance applied-B extraction ion diode on the SABRE positive polarity linear induction accelerator

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hanson, D.L.; Cuneo, M.E.; McKay, P.F.

We present results from initial experiments with a high impedance applied-B extraction diode on the SABRE ten stage linear induction accelerator (6.7 MV, 300 kA). We have demonstrated efficient coupling of power from the accelerator through an extended MITL (Magnetically Insulated Transmission Line) into a high intensity ion beam. Both MITL electron flow in the diode region and ion diode behavior, including ion source turn-on, virtual cathode formation and evolution, enhancement delay, and ion coupling efficiency, are strongly influenced by the geometry of the diode insulating magnetic field. For our present diode electrode geometry, electrons from the diode feed stronglymore » influence the evolution of the virtual cathode. Both experimental data and particle-in-cell numerical simulations show that uniform insulation of these feed electrons is required for uniform ion emission and efficient diode operation.« less

Direct diode lasers with comparable beam quality to fiber, CO2, and solid state lasers

NASA Astrophysics Data System (ADS)

Huang, Robin K.; Chann, Bien; Burgess, James; Kaiman, Michael; Overman, Robert; Glenn, John D.; Tayebati, Parviz

2012-03-01

TeraDiode has produced kW-class ultra-high brightness fiber-coupled direct diode lasers. A fiber-coupled direct diode laser with a power level of 2,040 W from a 50 μm core diameter, 0.15 numerical aperture (NA) output fiber at a single center wavelength was demonstrated. This was achieved with a novel beam combining and shaping technique using COTS diode lasers. The fiber-coupled output corresponds to a Beam Parameter Product (BPP) of 3.75 mm-mrad and is the lowest BPP kW-class direct diode laser yet reported. This laser is suitable for industrial materials processing applications, including sheet metal cutting and welding. This 2-kW fiber-coupled direct diode laser has comparable brightness to that of industrial fiber lasers and CO2 lasers, and is over 10x brighter than state-of-the-art direct diode lasers.

In vivo dosimetry using a single diode for megavoltage photon beam radiotherapy: implementation and response characterization.

PubMed

Colussi, V C; Beddar, A S; Kinsella, T J; Sibata, C H

2001-01-01

The AAPM Task Group 40 reported that in vivo dosimetry can be used to identify major deviations in treatment delivery in radiation therapy. In this paper, we investigate the feasibility of using one single diode to perform in vivo dosimetry in the entire radiotherapeutic energy range regardless of its intrinsic buildup material. The only requirement on diode selection would be to choose a diode with the adequate build up to measure the highest beam energy. We have tested the new diodes from Sun Nuclear Corporation (called QED and ISORAD-p--both p-type) for low-, intermediate-, and high-energy range. We have clinically used both diode types to monitor entrance doses. In general, we found that the dose readings from the ISORAD (p-type) are closer of the dose expected than QED diodes in the clinical setting. In this paper we report on the response of these newly available ISORAD (p-type) diode detectors with respect to certain radiation field parameters such as source-to-surface distance, field size, wedge beam modifiers, as well as other parameters that affect detector characteristics (temperature and detector-beam orientation). We have characterized the response of the high-energy ISORAD (p-type) diode in the low- (1-4 MV), intermediate- (6-12 MV), and high-energy (15-25 MV) range. Our results showed that the total variation of the response of high-energy ISORAD (p-type) diodes to all the above parameters are within +/-5% in most encountered clinical patient treatment setups in the megavoltage photon beam radiotherapy. The usage of the high-energy buildup diode has the additional benefit of amplifying the response of the diode reading in case the wrong energy is used for patient treatment. In the light of these findings, we have since then switched to using only one single diode type, namely the "red" diode; manufacturer designation of the ISORAD (p-type) high-energy (15-25 MV) range diode, for all energies in our institution and satellites.

In vivo dosimetry using a single diode for megavoltage photon beam radiotherapy: Implementation and response characterization

PubMed Central

Beddar, A. Sam; Kinsella, Timothy J.; Sibata, Claudio H.

2001-01-01

The AAPM Task Group 40 reported that in vivo dosimetry can be used to identify major deviations in treatment delivery in radiation therapy. In this paper, we investigate the feasibility of using one single diode to perform in vivo dosimetry in the entire radiotherapeutic energy range regardless of its intrinsic buildup material. The only requirement on diode selection would be to choose a diode with the adequate build up to measure the highest beam energy. We have tested the new diodes from Sun Nuclear Corporation (called QED and ISORAD‐p–both p‐type) for low‐, intermediate‐, and high‐energy range. We have clinically used both diode types to monitor entrance doses. In general, we found that the dose readings from the ISORAD (p‐type) are closer of the dose expected than QED diodes in the clinical setting. In this paper we report on the response of these newly available ISORAD (p‐type) diode detectors with respect to certain radiation field parameters such as source‐to‐surface distance, field size, wedge beam modifiers, as well as other parameters that affect detector characteristics (temperature and detector‐beam orientation). We have characterized the response of the high‐energy ISORAD (p‐type) diode in the low‐ (1–4 MV), intermediate‐ (6–12 MV), and high‐energy (15–25 MV) range. Our results showed that the total variation of the response of high‐energy ISORAD (p‐type) diodes to all the above parameters are within ±5% in most encountered clinical patient treatment setups in the megavoltage photon beam radiotherapy. The usage of the high‐energy buildup diode has the additional benefit of amplifying the response of the diode reading in case the wrong energy is used for patient treatment. In the light of these findings, we have since then switched to using only one single diode type, namely the “red” diode; manufacturer designation of the ISORAD (p‐type) high‐energy (15–25 MV) range diode, for all energies in our institution and satellites. PACS number(s): 87.66.–a, 87.53.–j PMID:11686742

Improvements in brain activation detection using time-resolved diffuse optical means

NASA Astrophysics Data System (ADS)

Montcel, Bruno; Chabrier, Renee; Poulet, Patrick

2005-08-01

An experimental method based on time-resolved absorbance difference is described. The absorbance difference is calculated over each temporal step of the optical signal with the time-resolved Beer-Lambert law. Finite element simulations show that each step corresponds to a different scanned zone and that cerebral contribution increases with the arrival time of photons. Experiments are conducted at 690 and 830 nm with a time-resolved system consisting of picosecond laser diodes, micro-channel plate photo-multiplier tube and photon counting modules. The hemodynamic response to a short finger tapping stimulus is measured over the motor cortex. Time-resolved absorbance difference maps show that variations in the optical signals are not localized in superficial regions of the head, which testify for their cerebral origin. Furthermore improvements in the detection of cerebral activation is achieved through the increase of variations in absorbance by a factor of almost 5 for time-resolved measurements as compared to non-time-resolved measurements.

A time-domain fluorescence diffusion optical tomography system for breast tumor diagnosis

NASA Astrophysics Data System (ADS)

Zhang, Wei; Gao, Feng; Wu, LinHui; Ma, Wenjuan; Yang, Fang; Zhou, Zhongxing; Zhang, Limin; Zhao, Huijuan

2011-02-01

A prototype time-domain fluorescence diffusion optical tomography (FDOT) system using near-infrared light is presented. The system employs two pulsed light sources, 32 source fibers and 32 detection channels, working separately for acquiring the temporal distribution of the photon flux on the tissue surface. The light sources are provided by low power picosecond pulsed diode lasers at wavelengths of 780 nm and 830 nm, and a 1×32-fiber-optic-switch sequentially directs light sources to the object surface through 32 source fibers. The light signals re-emitted from the object are collected by 32 detection fibers connected to four 8×1 fiber-optic-switch and then routed to four time-resolved measuring channels, each of which consists of a collimator, a filter wheel, a photomultiplier tube (PMT) photon-counting head and a time-correlated single photon counting (TCSPC) channel. The performance and efficacy of the designed multi-channel PMT-TCSPC system are assessed by reconstructing the fluorescent yield and lifetime images of a solid phantom.

Self-rolling and light-trapping in flexible quantum well–embedded nanomembranes for wide-angle infrared photodetectors

PubMed Central

Wang, Han; Zhen, Honglou; Li, Shilong; Jing, Youliang; Huang, Gaoshan; Mei, Yongfeng; Lu, Wei

2016-01-01

Three-dimensional (3D) design and manufacturing enable flexible nanomembranes to deliver unique properties and applications in flexible electronics, photovoltaics, and photonics. We demonstrate that a quantum well (QW)–embedded nanomembrane in a rolled-up geometry facilitates a 3D QW infrared photodetector (QWIP) device with enhanced responsivity and detectivity. Circular geometry of nanomembrane rolls provides the light coupling route; thus, there are no external light coupling structures, which are normally necessary for QWIPs. This 3D QWIP device under tube-based light-trapping mode presents broadband enhancement of coupling efficiency and omnidirectional detection under a wide incident angle (±70°), offering a unique solution to high-performance focal plane array. The winding number of these rolled-up QWIPs provides well-tunable blackbody photocurrents and responsivity. 3D self-assembly of functional nanomembranes offers a new path for high conversion efficiency between light and electricity in photodetectors, solar cells, and light-emitting diodes. PMID:27536723

PHARAO space atomic clock: new developments on the laser source

NASA Astrophysics Data System (ADS)

Saccoccio, Muriel; Loesel, Jacques; Coatantiec, Claude; Simon, Eric; Laurent, Philippe; Lemonde, Pierre; Maksimovic, I.; Abgrall, M.

2017-11-01

The PHARAO project purpose is to open the way for a new atomic clock generation in space, where laser cooling techniques and microgravity allow high frequency stability and accuracy. The French space agency, CNES is funding and managing the clock construction. The French SYRTE and LKB laboratories are scientific and technical advisers for the clock requirements and the follow-up of subsystem development in industrial companies. EADS SODERN is developing two main subsystems of the PHARAO clock: the Laser Source and the Cesium Tube where atoms are cooled, launched, selected and detected by laser beams. The Laser Source includes an optical bench and electronic devices to generate the laser beams required. This paper describes PHARAO and the role laser beams play in its principle of operation. Then we present the Laser Source design, the technologies involved, and the status of development. Lastly, we focus of a key equipment to reach the performances expected, which is the Extended Cavity Laser Diode.

Laboratory Studies of Chemical and Photochemical Processes Relevant to Stratospheric Ozone

NASA Technical Reports Server (NTRS)

Villalta, P. W.; Zahniser, M. S.; Nelson, D. D.; Kolb, C. E.

1998-01-01

This is the final report for this project. Its purpose is to reduce the uncertainty in rate coefficients for key gas-phase kinetic processes which impact our understanding of stratospheric ozone. The main emphasis of this work is on measuring the rate coefficients for the reactions of HO2 + O3, and HO2 + NO2 in the temperature range (200-240 K) relevant to the lower stratosphere. In order to accomplish this, a high pressure turbulent flow tube reactor was built and its flow characteristics were quantified. The instrument was coupled with tunable diode laser spectroscopy for HO2 detection. Room temperature measurements of the HO2 + NO2 rate coefficients over the pressure range of 50-300 torr agree well with previous measurements. Preliminary measurements of the HO2 + O, rate coefficients at 50 - 300 Torr over the temperature range of 208-294 K agree with the NASA evaluation from 294-225 K but deviate significantly (50 % higher) at approximately 210 K.

A method for improving the light intensity distribution in dental light-curing units.

PubMed

Arikawa, Hiroyuki; Takahashi, Hideo; Minesaki, Yoshito; Muraguchi, Kouichi; Matsuyama, Takashi; Kanie, Takahito; Ban, Seiji

2011-01-01

A method for improving the uniformity of the radiation light from dental light-curing units (LCUs), and the effect on the polymerization of light-activated composite resin are investigated. Quartz-tungsten halogen, plasma-arc, and light-emitting diode LCUs were used, and additional optical elements such as a mixing tube and diffusing screen were employed to reduce the inhomogeneity of the radiation light. The distribution of the light intensity from the light guide tip was measured across the guide tip, as well as the distribution of the surface hardness of the light-activated resin emitted with the LCUs. Although the additional optical elements caused 13.2-25.9% attenuation of the light intensity, the uniformity of the light intensity of the LCUs was significantly improved in the modified LCUs, and the uniformity of the surface hardness of the resin was also improved. Our results indicate that the addition of optical elements to the LCU may be a simple and effective method for reducing inhomogeneity in radiation light from the LCUs.

A compact small-beam XRF instrument for in-situ analysis of objects of historical and/or artistic value

NASA Astrophysics Data System (ADS)

Vittiglio, G.; Janssens, K.; Vekemans, B.; Adams, F.; Oost, A.

1999-11-01

The analytical characteristics, possibilities and limitations of a compact and easily transportable small-beam XRF instrument are described. The instrument consists of a compact, mini-focus Mo X-ray tube that is collimated to produce a sub-mm beam and a peltier-cooled PIN diode detector. Relative MDLs in highly scattering matrices are situated in the 10-100-ppm range; for metallic matrices featuring strong matrix lines, the MDLs of the instrument are approximately a factor 2 higher. Since only a small irradiation area is required, a simple micro-polishing technique that may be performed in situ in combination with the measurements is shown to be effective for the determination of the bulk composition of corroded bronze objects. As an example, a series of Egyptian bronze objects date from XXII nd Egyptian Dynasty (ca. 1090 BC) to the Roman era (30 BC to 640 AD) was analyzed in order to contribute to the very limited database on Cu-alloy compositions from this period.

Fine Output Voltage Control Method considering Time-Delay of Digital Inverter System for X-ray Computed Tomography

NASA Astrophysics Data System (ADS)

Shibata, Junji; Kaneko, Kazuhide; Ohishi, Kiyoshi; Ando, Itaru; Ogawa, Mina; Takano, Hiroshi

This paper proposes a new output voltage control for an inverter system, which has time-delay and nonlinear load. In the next generation X-ray computed tomography of a medical device (X-ray CT) that uses the contactless power transfer method, the feedback signal often contains time-delay due to AD/DA conversion and error detection/correction time. When the PID controller of the inverter system is received the adverse effects of the time-delay, the controller often has an overshoot and a oscillated response. In order to overcome this problem, this paper proposes a compensation method based on the Smith predictor for an inverter system having a time-delay and the nonlinear loads which are the diode bridge rectifier and X-ray tube. The proposed compensation method consists of the hybrid Smith predictor system based on an equivalent analog circuit and DSP. The experimental results confirm the validity of the proposed system.

Cathode Formed by Thermal Evaporation of Ba:Al Alloy and Estimations of Barrier Height in an Organic LED

NASA Astrophysics Data System (ADS)

Ding, Lei; Zhang, Fang-Hui

2011-06-01

It is demonstrated that barium and aluminum alloy synthesized by melting in a glass tube under low vacuum is applicable for organic laser emitting diodes (LEDs) as a thin film cathode. The alloy film obtained by the thermal evaporation of pre-synthesized alloy is used in a single-boat organic LED device with the structure: indium tin oxide (ITO)/4,4'-bis[N-(1-naphthyl)-N-phenylamino]biphenyl(NPB)/tris-(8-hydroxyquinoline) aluminum(Alq3)/barium:aluminum alloy. The experimental results show that devices with this alloy film cathode exhibit better current density-voltage-luminance characteristics than those with a conventional pure Al cathode, and more weight of barium in aluminum leads to better performance of the devices. Characteristics of current density versus voltage for the electron-only devices are fitted by the Richardson—Schottky emission model, indicating that the electron injection barrier has a decrease of about 0.3 eV by this alloy cathode.

Greatly improved 3C-SiC p-n junction diodes grown by chemical vapor deposition

NASA Technical Reports Server (NTRS)

Neudeck, Philip G.; Larkin, David J.; Starr, Jonathan E.; Powell, J. A.; Salupo, Carl S.; Matus, Lawrence G.

1993-01-01

This paper reports the fabrication and initial electrical characterization of greatly improved 3C-SiC (beta-SiC) p-n junction diodes. These diodes, which were grown on commercially available 6H-SiC substrates by chemical vapor deposition, demonstrate rectification to -200 V at room temperature, representing a fourfold improvement in reported 3C-SiC diode blocking voltage. The reverse leakage currents and saturation current densities measured on these diodes also show significant improvement compared to previously reported 3C-SiC p-n junction diodes. When placed under sufficient forward bias, the diodes emit significantly bright green-yellow light. These results should lead to substantial advancements in 3C-SiC transistor performance.

Microwave device investigations

NASA Technical Reports Server (NTRS)

Haddad, G. I.; Lomax, R. J.; Masnari, N. A.; Shabde, S. E.

1971-01-01

Several tasks were active during this report period: (1) noise modulation in avalanche-diode devices; (2) schottky-barrier microwave devices; (3) intermodulation products in IMPATT diode amplifiers; (4) harmonic generation using Read-diode varactors; and (5) fabrication of GaAs Schottky-barrier IMPATT diodes.

Diode pumped solid-state laser oscillators for spectroscopic applications

NASA Technical Reports Server (NTRS)

Byer, R. L.; Basu, S.; Fan, T. Y.; Kozlovsky, W. J.; Nabors, C. D.; Nilsson, A.; Huber, G.

1987-01-01

The rapid improvement in diode laser pump sources has led to the recent progress in diode laser pumped solid state lasers. To date, electrical efficiencies of greater than 10 percent were demonstrated. As diode laser costs decrease with increased production volume, diode laser and diode laser array pumped solid state lasers will replace the traditional flashlamp pumped Nd:YAG laser sources. The use of laser diode array pumping of slab geometry lasers will allow efficient, high peak and average power solid state laser sources to be developed. Perhaps the greatest impact of diode laser pumped solid state lasers will be in spectroscopic applications of miniature, monolithic devices. Single-stripe diode-pumped operation of a continuous-wave 946 nm Nd:YAG laser with less than 10 m/w threshold was demonstrated. A slope efficiency of 16 percent near threshold was shown with a projected slope efficiency well above a threshold of 34 percent based on results under Rhodamine 6G dye-laser pumping. Nonlinear crystals for second-harmonic generation of this source were evaluated. The KNbO3 and periodically poled LiNbO3 appear to be the most promising.

Noncontact Characterization of PV Detector Arrays

DTIC Science & Technology

1990-06-01

11-7 3 III DIODE ARRAY AS A SAW CONVOLVER/STORAGE CORRELATOR .... III-1 III.A NONLINEAR ( VARACTOR ) ACTION OF THE DIODES .......................... I...associated with the diodes in the detector array. The varactor action of the diodes produces a voltage across the diodes which is pro- portional to the...type of interactions desired herein. An alternative approach is to em- ploy thin dielectric overlays, such as zinc oxide or silicon nitride

A new cryogenic diode thermometer

NASA Astrophysics Data System (ADS)

Courts, S. S.; Swinehart, P. R.; Yeager, C. J.

2002-05-01

While the introduction of yet another cryogenic diode thermometer is not earth shattering, a new diode thermometer, the DT-600 series, recently introduced by Lake Shore Cryotronics, possesses three features that make it unique among commercial diode thermometers. First, these diodes have been probed at the chip level, allowing for the availability of a bare chip thermometer matching a standard curve-an important feature in situations where real estate is at a premium (IR detectors), or where in-situ calibration is difficult. Second, the thermometry industry has assumed that interchangeability should be best at low temperatures. Thus, good interchangeability at room temperatures implies a very good interchangeability at cryogenic temperature, resulting in a premium priced sensor. The DT-600 series diode thermometer is available in an interchangeability band comparable to platinum RTDs with the added advantage of interchangeability to 2 K. Third, and most important, the DT-600 series diode does not exhibit an instability in the I-V characteristic in the 8 K to 20 K temperature range that is observed in other commercial diode thermometer devices [1]. This paper presents performance characteristics for the DT-600 series diode thermometer along with a comparison of I-V curves for this device and other commercial diode thermometers exhibiting an I-V instability.

Modification of electrical properties of Au/n-type InP Schottky diode with a high-k Ba0.6Sr0.4TiO3 interlayer

NASA Astrophysics Data System (ADS)

Thapaswini, P. Prabhu; Padma, R.; Balaram, N.; Bindu, B.; Rajagopal Reddy, V.

2016-05-01

Au/Ba0.6Sr0.4TiO3 (BST)/n-InP metal/insulator/semiconductor (MIS) Schottky diodes have been analyzed by current-voltage (I-V) and capacitance-voltage (C-V) measurements. The surface morphology of the BST films on InP is fairly smooth. The Au/BST/n-InP MIS Schottky diode shows better rectification ratio and low leakage current compared to the conventional Au/n-InP metal-semiconductor (MS) Schottky diode. Higher barrier height is achieved for the MIS Schottky diode compared to the MS Schottky diode. The Norde and Cheung's methods are employed to determine the barrier height, ideality factor and series resistance. The interface state density (NSS) is determined from the forward bias I-V data for both the MS and MIS Schottky diodes. Results reveal that the NSS of the MIS Schottky diode is lower than that of the MS Schottky diode. The Poole-Frenkel emission is found dominating the reverse current in both Au/n-InP MS and Au/BST/n-InP MIS Schottky diodes, indicating the presence of structural defects and trap levels in the dielectric film.

High-Reliability Pump Module for Non-Planar Ring Oscillator Laser

NASA Technical Reports Server (NTRS)

Liu, Duncan T.; Qiu, Yueming; Wilson, Daniel W.; Dubovitsky, Serge; Forouhar, Siamak

2007-01-01

We propose and have demonstrated a prototype high-reliability pump module for pumping a Non-Planar Ring Oscillator (NPRO) laser suitable for space missions. The pump module consists of multiple fiber-coupled single-mode laser diodes and a fiber array micro-lens array based fiber combiner. The reported Single-Mode laser diode combiner laser pump module (LPM) provides a higher normalized brightness at the combined beam than multimode laser diode based LPMs. A higher brightness from the pump source is essential for efficient NPRO laser pumping and leads to higher reliability because higher efficiency requires a lower operating power for the laser diodes, which in turn increases the reliability and lifetime of the laser diodes. Single-mode laser diodes with Fiber Bragg Grating (FBG) stabilized wavelength permit the pump module to be operated without a thermal electric cooler (TEC) and this further improves the overall reliability of the pump module. The single-mode laser diode LPM is scalable in terms of the number of pump diodes and is capable of combining hundreds of fiber-coupled laser diodes. In the proof-of-concept demonstration, an e-beam written diffractive micro lens array, a custom fiber array, commercial 808nm single mode laser diodes, and a custom NPRO laser head are used. The reliability of the proposed LPM is discussed.

Fabrication and optimization of a whiskerless Schottky barrier diode for submillimeter wave applications

NASA Technical Reports Server (NTRS)

Bishop, W.; Mattauch, R. J.

1990-01-01

The following accomplishments were made towards the goal of an optimized whiskerless diode chip for submillimeter wavelength applications. (1) Surface channel whiskerless diode structure was developed which offers excellent DC and RF characteristics, reduced shunt capacitance and simplified fabrication compared to mesa and proton isolated structures. (2) Reliable fabrication technology was developed for the surface channel structure. The new anode plating technology is a major improvement. (3) DC and RF characterization of the surface channel diode was compared with whisker contacted diodes. This data indicates electrical performance as good as the best reported for similar whisker contacted devices. (4) Additional batches of surface channel diodes were fabricated with excellent I-V and reduced shunt capacitance. (5) Large scale capacitance modelinng was done for the planar diode structure. This work revealed the importance of removing the substrate gallium arsenide for absolute minimum pad capacitance. (6) A surface channel diode was developed on quartz substrate and this substrate was completely removed after diode mounting for minimum parasitic capacitance. This work continues with the goal of producing excellent quality submillimeter wavelength planar diodes which satisfy the requirements of easy handling and robustness. These devices will allow the routine implementation of Schottky receivers into space-based applications at frequencies as high as 1 THz, and, in the future, beyond.

InGaAs/InP heteroepitaxial Schottky barrier diodes for terahertz applications

NASA Technical Reports Server (NTRS)

Bhapkar, Udayan V.; Li, Yongjun; Mattauch, Robert J.

1992-01-01

This paper explores the feasibility of planar, sub-harmonically pumped, anti-parallel InGaAs/InP heteroepitaxial Schottky diodes for terahertz applications. We present calculations of the (I-V) characteristics of such diodes using a numerical model that considers tunneling. We also present noise and conversion loss predictions of diode mixers operated at 500 GHz, and obtained from a multi-port mixer analysis, using the I-V characteristics predicted by our model. Our calculations indicate that InGaAs/InP heteroepitaxial Schottky barrier diodes are expected to have an I-V characteristic with an ideality factor comparable to that of GaAs Schottky diodes. However, the reverse saturation current of InGaAs/InP diodes is expected to be much greater than that of GaAs diodes. These predictions are confirmed by experiment. The mixer analyses predict that sub-harmonically pumped anti-parallel InGaAs/InP diode mixers are expected to offer a 2 dB greater conversion loss and a somewhat higher single sideband noise temperature than their GaAs counterparts. More importantly, the InGaAs/InP devices are predicted to require only one-tenth of the local oscillator power required by similar GaAs diodes.

Radiation Resistance and Life Time Estimates at Cryogenic Temperatures of Series Produced By-Pass Diodes for the LHC Magnet Protection

NASA Astrophysics Data System (ADS)

Denz, R.; Gharib, A.; Hagedorn, D.

2004-06-01

For the protection of the LHC superconducting magnets about 2100 specially developed by-pass diodes have been manufactured in industry and more than one thousand of these diodes have been mounted into stacks and tested in liquid helium. By-pass diode samples, taken from the series production, have been submitted to irradiation tests at cryogenic temperatures together with some prototype diodes up to an accumulated dose of about 2 kGy and neutron fluences up to about 3.0 1013 n cm-2 with and without intermediate warm up to 300 K. The device characteristics of the diodes under forward bias and reverse bias have been measured at 77 K and ambient versus dose and the results are presented. Using a thermo-electrical model and new estimates for the expected dose in the LHC, the expected lifetime of the by-pass diodes has been estimated for various positions in the LHC arcs. It turns out that for all of the by-pass diodes across the arc elements the radiation resistance is largely sufficient. In the dispersion suppresser regions of the LHC, on a few diodes annual annealing during the shut down of the LHC must be applied or those diodes may need to be replaced after some time.

Dual function conducting polymer diodes

DOEpatents

Heeger, Alan J.; Yu, Gang

1996-01-01

Dual function diodes based on conjugated organic polymer active layers are disclosed. When positively biased the diodes function as light emitters. When negatively biased they are highly efficient photodiodes. Methods of preparation and use of these diodes in displays and input/output devices are also disclosed.

Molecular Diode Studies Based on a Highly Sensitive Molecular Measurement Technique.

PubMed

Iwane, Madoka; Fujii, Shintaro; Kiguchi, Manabu

2017-04-26

In 1974, molecular electronics pioneers Mark Ratner and Arieh Aviram predicted that a single molecule could act as a diode, in which electronic current can be rectified. The electronic rectification property of the diode is one of basic functions of electronic components and since then, the molecular diode has been investigated as a first single-molecule device that would have a practical application. In this review, we first describe the experimental fabrication and electronic characterization techniques of molecular diodes consisting of a small number of molecules or a single molecule. Then, two main mechanisms of the rectification property of the molecular diode are discussed. Finally, representative results for the molecular diode are reviewed and a brief outlook on crucial issues that need to be addressed in future research is discussed.

The transverse magnetic field effect on steady-state solutions of the Bursian diode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pramanik, Sourav; Chakrabarti, Nikhil; Ender, A. Ya.

2015-04-15

A study of steady-states of a planar vacuum diode driven by a cold electron beam (the Bursian diode) under an external transverse magnetic field is presented. The regime of no electrons turned around by a magnetic field only is under the consideration. The emitter electric field is evaluated as a characteristic function for the existence of solutions depending on the diode length, the applied voltage, and the magnetic field strength. At certain conditions, it is shown that a region of non-unique solutions exists in the Bursian diode when the magnetic field is absent. An expression for the maximum current transmittedmore » through the diode is derived. The external magnetic field is put forth to control fast electronic switches based on the Bursian diode.« less

Molecular Diode Studies Based on a Highly Sensitive Molecular Measurement Technique

PubMed Central

Iwane, Madoka; Fujii, Shintaro; Kiguchi, Manabu

2017-01-01

In 1974, molecular electronics pioneers Mark Ratner and Arieh Aviram predicted that a single molecule could act as a diode, in which electronic current can be rectified. The electronic rectification property of the diode is one of basic functions of electronic components and since then, the molecular diode has been investigated as a first single-molecule device that would have a practical application. In this review, we first describe the experimental fabrication and electronic characterization techniques of molecular diodes consisting of a small number of molecules or a single molecule. Then, two main mechanisms of the rectification property of the molecular diode are discussed. Finally, representative results for the molecular diode are reviewed and a brief outlook on crucial issues that need to be addressed in future research is discussed. PMID:28445393

Trap-induced photoconductivity in singlet fission pentacene diodes

NASA Astrophysics Data System (ADS)

Qiao, Xianfeng; Zhao, Chen; Chen, Bingbing; Luan, Lin

2014-07-01

This paper reports a trap-induced photoconductivity in ITO/pentacene/Al diodes by using current-voltage and magneto-conductance measurements. The comparison of photoconductivity between pentacene diodes with and without trap clearly shows that the traps play a critical role in generating photoconductivity. It shows that no observable photoconductivity is detected for trap-free pentacene diodes, while significant photoconductivity is observed in diodes with trap. This is because the initial photogenerated singlet excitons in pentacene can rapidly split into triplet excitons with higher binding energy prior to dissociating into free charge carriers. The generated triplet excitons react with trapped charges to release charge-carriers from traps, leading to a trap-induced photoconductivity in the single-layer pentacene diodes. Our studies elucidated the formation mechanisms of photoconductivity in pentacene diodes with extremely fast singlet fission rate.

Generation of High-Voltage Pulses by Sharp-Recovery SiC Drift Diodes ( n-Base versus p-Base Diodes)

NASA Astrophysics Data System (ADS)

Ivanov, P. A.; Grekhov, I. V.

2018-01-01

The time characteristics of pulse generators based on sharp-recovery 4 H : SiC drift diodes have been calculated. It has been found that the speed of n-base 4 H-SiC diodes is superior to that of p-base diodes with the amplitude and initial pedestal in the output voltage (<5% of the amplitude) versus the time curve being the same.

Pump Diode Characterization for an Unstable Diode-Pumped Alkali Laser Resonator

DTIC Science & Technology

2013-03-01

2003. Petersen, A., and R. Lane, Second harmonic operation of diode-pumped Rb vapor lasers , Proc. of SPIE, 7005, 2008. Siegman , A. E., Lasers ...University Science Books, Sausalito, CA, 1986. Siegman , A. E., Defining, measuring and optimizing laser beam quality, Proc. of SPIE, 1868, 1993. Steck, D...PUMP DIODE CHARACTERIZATION FOR AN UNSTABLE DIODE-PUMPED ALKALI LASER RESONATOR THESIS Chad T. Taguba, Master Sergeant, USAF AFIT-ENP-13-M-33

Light Emitting, Photovoltaic or Other Electronic Apparatus and System

NASA Technical Reports Server (NTRS)

Blanchard, Richard A. (Inventor); Lewandowski, Mark Allan (Inventor); Lowenthal, Mark D. (Inventor); Fuller, Kirk A. (Inventor); Frazier, Donald Odell (Inventor); Shotton, Neil O. (Inventor); Ray, William Johnstone (Inventor)

2016-01-01

The present invention provides an electronic apparatus, such as a lighting device comprised of light emitting diodes (LEDs) or a power generating apparatus comprising photovoltaic diodes, which may be created through a printing process, using a semiconductor or other substrate particle ink or suspension and using a lens particle ink or suspension. An exemplary apparatus comprises a base; at least one first conductor; a plurality of diodes coupled to the at least one first conductor; at least one second conductor coupled to the plurality of diodes; and a plurality of lenses suspended in a polymer deposited or attached over the diodes. The lenses and the suspending polymer have different indices of refraction. In some embodiments, the lenses and diodes are substantially spherical, and have a ratio of mean diameters or lengths between about 10:1 and 2:1. The diodes may be LEDs or photovoltaic diodes, and in some embodiments, have a junction formed at least partially as a hemispherical shell or cap.

Light Emitting, Photovoltaic or Other Electronic Apparatus and System

NASA Technical Reports Server (NTRS)

Shotton, Neil O. (Inventor); Lewandowski, Mark Allan (Inventor); Lowenthal, Mark D. (Inventor); Ray, William Johnstone (Inventor); Blanchard, Richard A. (Inventor); Fuller, Kirk A. (Inventor); Frazier, Donald Odell (Inventor)

2018-01-01

The present invention provides an electronic apparatus, such as a lighting device comprised of light emitting diodes (LEDs) or a power generating apparatus comprising photovoltaic diodes, which may be created through a printing process, using a semiconductor or other substrate particle ink or suspension and using a lens particle ink or suspension. An exemplary apparatus comprises a base; at least one first conductor; a plurality of diodes coupled to the at least one first conductor; at least one second conductor coupled to the plurality of diodes; and a plurality of lenses suspended in a polymer deposited or attached over the diodes. The lenses and the suspending polymer have different indices of refraction. In some embodiments, the lenses and diodes are substantially spherical, and have a ratio of mean diameters or lengths between about 10:1 and 2:1. The diodes may be LEDs or photovoltaic diodes, and in some embodiments, have a junction formed at least partially as a hemispherical shell or cap.

Light Emitting, Photovoltaic or Other Electronic Apparatus and System

NASA Technical Reports Server (NTRS)

Ray, William Johnstone (Inventor); Shotton, Neil O. (Inventor); Lewandowski, Mark Allan (Inventor); Lowenthal, Mark D. (Inventor); Blanchard, Richard A. (Inventor); Fuller, Kirk A. (Inventor); Frazier, Donald Odell (Inventor)

2016-01-01

The present invention provides an electronic apparatus, such as a lighting device comprised of light emitting diodes (LEDs) or a power generating apparatus comprising photovoltaic diodes, which may be created through a printing process, using a semiconductor or other substrate particle ink or suspension and using a lens particle ink or suspension. An exemplary apparatus comprises a base; at least one first conductor; a plurality of substantially spherical or optically resonant diodes coupled to the at least one first conductor; at least one second conductor coupled to the plurality of diodes; and a plurality of substantially spherical lenses suspended in a polymer attached or deposited over the diodes. The lenses and the suspending polymer have different indices of refraction. In some embodiments, the lenses and diodes have a ratio of mean diameters or lengths between about 10:1 and 2:1. The diodes may be LEDs or photovoltaic diodes, and in some embodiments, have a junction formed at least partially as a hemispherical shell or cap.

Complete indium-free CW 200W passively cooled high power diode laser array using double-side cooling technology

NASA Astrophysics Data System (ADS)

Wang, Jingwei; Zhu, Pengfei; Liu, Hui; Liang, Xuejie; Wu, Dihai; Liu, Yalong; Yu, Dongshan; Zah, Chung-en; Liu, Xingsheng

2017-02-01

High power diode lasers have been widely used in many fields. To meet the requirements of high power and high reliability, passively cooled single bar CS-packaged diode lasers must be robust to withstand thermal fatigue and operate long lifetime. In this work, a novel complete indium-free double-side cooling technology has been applied to package passively cooled high power diode lasers. Thermal behavior of hard solder CS-package diode lasers with different packaging structures was simulated and analyzed. Based on these results, the device structure and packaging process of double-side cooled CS-packaged diode lasers were optimized. A series of CW 200W 940nm high power diode lasers were developed and fabricated using hard solder bonding technology. The performance of the CW 200W 940nm high power diode lasers, such as output power, spectrum, thermal resistance, near field, far field, smile, lifetime, etc., is characterized and analyzed.

Light emitting, photovoltaic or other electronic apparatus and system

NASA Technical Reports Server (NTRS)

Ray, William Johnstone (Inventor); Lowenthal, Mark D. (Inventor); Shotton, Neil O. (Inventor); Blanchard, Richard A. (Inventor); Lewandowski, Mark Allan (Inventor); Fuller, Kirk A. (Inventor); Frazier, Donald Odell (Inventor)

2013-01-01

The present invention provides an electronic apparatus, such as a lighting device comprised of light emitting diodes (LEDs) or a power generating apparatus comprising photovoltaic diodes, which may be created through a printing process, using a semiconductor or other substrate particle ink or suspension and using a lens particle ink or suspension. An exemplary apparatus comprises a base; at least one first conductor; a plurality of diodes coupled to the at least one first conductor; at least one second conductor coupled to the plurality of diodes; and a plurality of lenses suspended in a polymer deposited or attached over the diodes. The lenses and the suspending polymer have different indices of refraction. In some embodiments, the lenses and diodes are substantially spherical, and have a ratio of mean diameters or lengths between about 10:1 and 2:1. The diodes may be LEDs or photovoltaic diodes, and in some embodiments, have a junction formed at least partially as a hemispherical shell or cap.

Noise and loss in balanced and subharmonically pumped mixers. I - Theory. II - Application

NASA Technical Reports Server (NTRS)

Kerr, A. R.

1979-01-01

The theory of noise and frequency conversion for two-diode balanced and subharmonically pumped mixers is presented. The analysis is based on the equivalent circuit of the Schottky diode, having nonlinear capacitance, series resistance, and shot and thermal noise. Expressions for the conversion loss, noise temperature, and input and output impedances are determined in a form suitable for numerical analysis. In Part II, the application of the theory to practical mixers is demonstrated, and the properties of some two-diode mixers are examined. The subharmonically pumped mixer is found to be much more strongly affected by the loop inductance than the balanced mixer, and the ideal two-diode mixer using exponential diodes has a multiport noise-equivalent network (attenuator) similar to that of the ideal single-diode mixer. It is concluded that the theory can be extended to mixers with more than two diodes and will be useful for their design and analysis, provided a suitable nonlinear analysis is available to determine the diode waveforms.

Light emitting, photovoltaic or other electronic apparatus and system

NASA Technical Reports Server (NTRS)

Lowenthal, Mark D. (Inventor); Blanchard, Richard A. (Inventor); Lewandowski, Mark Allan (Inventor); Frazier, Donald Odell (Inventor); Shotton, Neil O. (Inventor); Ray, William Johnstone (Inventor); Fuller, Kirk A. (Inventor)

2013-01-01

The present invention provides an electronic apparatus, such as a lighting device comprised of light emitting diodes (LEDs) or a power generating apparatus comprising photovoltaic diodes, which may be created through a printing process, using a semiconductor or other substrate particle ink or suspension and using a lens particle ink or suspension. An exemplary apparatus comprises a base; at least one first conductor; a plurality of substantially spherical or optically resonant diodes coupled to the at least one first conductor; at least one second conductor coupled to the plurality of diodes; and a plurality of substantially spherical lenses suspended in a polymer attached or deposited over the diodes. The lenses and the suspending polymer have different indices of refraction. In some embodiments, the lenses and diodes have a ratio of mean diameters or lengths between about 10:1 and 2:1. The diodes may be LEDs or photovoltaic diodes, and in some embodiments, have a junction formed at least partially as a hemispherical shell or cap.

[Research on diagnosis of gas-liquid detonation exhaust based on double optical path absortion spectroscopy technique].

PubMed

Lü, Xiao-Jing; Li, Ning; Weng, Chun-Sheng

2014-03-01

The effect detection of detonation exhaust can provide measurement data for exploring the formation mechanism of detonation, the promotion of detonation efficiency and the reduction of fuel waste. Based on tunable diode laser absorption spectroscopy technique combined with double optical path cross-correlation algorithm, the article raises the diagnosis method to realize the on-line testing of detonation exhaust velocity, temperature and H2O gas concentration. The double optical path testing system is designed and set up for the valveless pulse detonation engine with the diameter of 80 mm. By scanning H2O absorption lines of 1343nm with a high frequency of 50 kHz, the on-line detection of gas-liquid pulse detonation exhaust is realized. The results show that the optical testing system based on tunable diode laser absorption spectroscopy technique can capture the detailed characteristics of pulse detonation exhaust in the transient process of detonation. The duration of single detonation is 85 ms under laboratory conditions, among which supersonic injection time is 5.7 ms and subsonic injection time is 19.3 ms. The valveless pulse detonation engine used can work under frequency of 11 Hz. The velocity of detonation overflowing the detonation tube is 1,172 m x s(-1), the maximum temperature of detonation exhaust near the nozzle is 2 412 K. There is a transitory platform in the velocity curve as well as the temperature curve. H2O gas concentration changes between 0-7% during detonation under experimental conditions. The research can provide measurement data for the detonation process diagnosis and analysis, which is of significance to advance the detonation mechanism research and promote the research of pulse detonation engine control technology.

LOGARITHMIC AMPLIFIER

DOEpatents

Wade, E.J.; Stone, R.S.

1959-03-10

Electronic,amplifier circuits, especially a logai-ithmic amplifier characterizxed by its greatly improved strability are discussed. According to the in ention, means are provided to feed bach the output valtagee to a diode in the amplifier input circuit, the diode being utilized to produce the logarithmic characteristics. The diode is tics, The diode isition therewith and having its filament operated from thc same source s the filament of the logarithmic diode. A bias current of relatively large value compareii with the signal current is continuously passed through the compiting dioie to render the diode insensitivy to variations in the signal current. by this odes kdu to variaelled, so that the stability of the amlifier will be unimpaired.

Design and fabrication of metal-insulator-metal diode for high frequency applications

NASA Astrophysics Data System (ADS)

Azad, Ibrahim; Ram, Manoj K.; Goswami, D. Yogi; Stefanakos, Elias

2017-02-01

Metal-insulator-metal (MIM) diodes play significant role in high speed electronics where high frequency rectification is needed. Quantum based tunneling mechanism helps MIM diodes to rectify at high frequency signals. Rectenna, antenna coupled MIM diodes are becoming popular due to their potential use as IR detectors and energy harvesters. Because of small active area, MIM diodes could easily be incorporated into integrated circuits (IC's). The objective of the work is to design and develop MIM diodes for high frequency rectification. In this work, thin insulating layer of ZnO was fabricated using Langmuir-Blodgett (LB) technique which facilitates ultrathin thin, uniform and pinhole free fabrication of insulating layer. The ZnO layer was synthesized from organic precursor of zinc acetate layer. The optimization in the LB technique of fabrication process led to fabricate MIM diodes with high non-linearity and sensitivity. Moreover, the top and bottom electrodes as well as active area of the diodes were patterned using UV-tunneling conduction mechanism. The highest sensitivity of the diode was measured around 37 (A/W), and the rectification ratio was found around 36 under low applied bias at +/-100 mV.

The synergistic effect on osteogenic differentiation of human mesenchymal stem cells by diode laser-treated stimulating human umbilical vein endothelial cells

NASA Astrophysics Data System (ADS)

Kao, Chia-Tze; Hsu, Tuan-Ti; Huang, Tsui-Hsien; Wu, Yu-Tin; Chen, Yi-Wen; Shie, Ming-You

2016-02-01

Angiogenesis plays an important role in determining the biostimulation of bone regeneration, in either new bone or blood vessel formation. Human umbilical cord cells (HUVECs) are important effector cells in angiogenesis and are indispensable for osteogenesis and for their heterogeneity and plasticity. However, there are very few studies about the effects of HUVECs on diode laser-stimulated/regulated osteogenesis. In this study, we used diode laser as a model biostimulation to examine the role of HUVECs on laser-stimulated osteogenesis. Several bone formation-related proteins were also significantly up-regulated by the diode laser stimulation, indicating that HUVECs may participate in diode laser-stimulated osteogenesis. Interestingly, when human mesenchymal stem cells (hMSCs) cultured with HUVECs were diode laser-treated, the osteogenesis differentiation of the hMSCs was significantly promoted, indicating the important role of HUVECs in diode laser-enhanced osteogenesis. Adequately activated HUVECs are vital for the success of diode laser-stimulated hard-tissue regeneration. These findings provided valuable insights into the mechanism of diode laser-stimulated osteogenic differentiation, and a strategy to optimize the evaluation system for the in vitro osteogenesis capacity of laser treatment in periodontal repair.

Harmonic balance optimization of terahertz Schottky diode multipliers using an advanced device model

NASA Technical Reports Server (NTRS)

Schlecht, E. T.; Chattopadhyay, G.; Maestrini, A.; Pukala, D.; Gill, J.; Mehdi, I.

2002-01-01

Substantial proress has been made recently in the advancement of solid state terahertz sources using chains of Schottky diode frequency multipliers. We have developed a harmonic balance simulator and corresponding diode model that incorporates many other factors participating in the diode behavior.

Speckle reduction in laser projection displays through angle and wavelength diversity.

PubMed

Tran, Trinh-Thi-Kim; Svensen, Øyvind; Chen, Xuyuan; Akram, Muhammad Nadeem

2016-02-20

Speckle is the main obstacle for the use of laser light sources in projection technology. This paper focuses on speckle suppression by the reduction of temporal coherence which is provided by the broadband laser light. The investigation of the effect of laser spectrum width and multiple lasers on speckle contrast is discussed. A broader spectrum width of the laser light is attained by the use of multiple semiconductor laser diodes of the broad area type. Measurements of speckle contrast with and without angle diversity are performed for two and four laser diodes. The measurement of speckle contrast for a single laser diode is also presented for comparison. The experimental results show that multiple laser diodes provide lower speckle contrast as compared to a single laser diode. In addition, it is also shown in this paper that the wavelength distribution of independent laser diodes has an effect on speckle contrast. Two different types of blue laser diodes, Nichia NUB802T and Nichia NUB801E, which have slightly different central wavelengths, were used for the measurements. Four laser diodes with a combination of two types of laser diodes offer better speckle contrast reduction than four laser diodes of the same type due to an effective broader spectrum. Additional speckle contrast reduction is achieved through the angle diversity by using a dynamic deformable mirror.

Novel 755-nm diode laser vs. conventional 755-nm scanned alexandrite laser: Side-by-side comparison pilot study for thorax and axillary hair removal.

PubMed

Paasch, Uwe; Wagner, Justinus A; Paasch, Hartmut W

2015-01-01

Alexandrite (755 nm) and diode lasers (800-810 nm) are commonly used for hair removal. The alexandrite laser technology is somewhat cumbersome whereas new diode lasers are more robust. Recently, alexandrite-like 755 nm wavelength diodes became available. To compare the efficacy, tolerability, and subject satisfaction of a 755 nm diode laser operated in conventional (HR) and non-conventional in-motion (SHR) modes with a conventional scanned alexandrite 755 nm laser for chest and axillary hair removal. A prospective, single-center, proof of principle study was designed to evaluate the safety, efficacy and handling of a 755 nm diode laser system in comparison to a standard alexandrite 755 nm scanning hair removal laser. The new 755 nm diode is suitable to be used in SHR and HR mode and has been tested for its safety, efficacy and handling in a volunteer with success. Overall, both systems showed a high efficacy in hair reduction (88.8% 755 nm diode laser vs. 77.7% 755 nm alexandrite laser). Also, during the study period, no severe adverse effects were reported. The new 755 nm diode laser is as effective and safe as the traditional 755 nm alexandrite laser. Additionally, treatment with the 755 nm diode laser with HR and SHR modes was found to be less painful.

Combinational light emitting diode-high frequency focused ultrasound treatment for HeLa cell.

PubMed

Choe, Se-Woon; Park, Kitae; Park, Chulwoo; Ryu, Jaemyung; Choi, Hojong

2017-12-01

Light sources such as laser and light emitting diode or ultrasound devices have been widely used for cancer therapy and regenerative medicines, since they are more cost-effective and less harmful than radiation therapy, chemotherapy or magnetic treatment. Compared to laser and low intensity ultrasound techniques, light emitting diode and high frequency focused ultrasound shows enhanced therapeutic effects, especially for small tumors. We propose combinational light emitting diode-high frequency focused ultrasound treatment for human cervical cancer HeLa cells. Individual red, green, and blue light emitting diode light only, high frequency focused ultrasound only, or light emitting diode light combined with high frequency focused ultrasound treatments were applied in order to characterize the responses of HeLa cells. Cell density exposed by blue light emitting diode light combined with high frequency focused ultrasound (2.19 ± 0.58%) was much lower than that of cells exposed by red and green light emitting diode lights (81.71 ± 9.92% and 61.81 ± 4.09%), blue light emitting diode light (11.19 ± 2.51%) or high frequency focused ultrasound only (9.72 ± 1.04%). We believe that the proposed combinational blue light emitting diode-high frequency focused ultrasound treatment could have therapeutic benefits to alleviate cancer cell proliferation.

New approach to the design of Schottky barrier diodes for THz mixers

NASA Technical Reports Server (NTRS)

Jelenski, A.; Grueb, A.; Krozer, V.; Hartnagel, H. L.

1992-01-01

Near-ideal GaAs Schottky barrier diodes especially designed for mixing applications in the THz frequency range are presented. A diode fabrication process for submicron diodes with near-ideal electrical and noise characteristics is described. This process is based on the electrolytic pulse etching of GaAs in combination with an in-situ platinum plating for the formation of the Schottky contacts. Schottky barrier diodes with a diameter of 1 micron fabricated by the process have already shown excellent results in a 650 GHz waveguide mixer at room temperature. A conversion loss of 7.5 dB and a mixer noise temperature of less than 2000 K have been obtained at an intermediate frequency of 4 GHz. The optimization of the diode structure and the technology was possible due to the development of a generalized Schottky barrier diode model which is valid also at high current densities. The common diode design and optimization is discussed on the basis of the classical theory. However, the conventional fomulas are valid only in a limited forward bias range corresponding to currents much smaller than the operating currents under submillimeter mixing conditions. The generalized new model takes into account not only the phenomena occurring at the junction such as current dependent recombination and drift/diffusion velocities, but also mobility and electron temperature variations in the undepleted epi-layer. Calculated diode I/V and noise characteristics are in excellent agreement with the measured values. Thus, the model offers the possibility of optimizing the diode structure and predicting the diode performance under mixing conditions at THz frequencies.

Monte Carlo study of si diode response in electron beams.

PubMed

Wang, Lilie L W; Rogers, David W O

2007-05-01

Silicon semiconductor diodes measure almost the same depth-dose distributions in both photon and electron beams as those measured by ion chambers. A recent study in ion chamber dosimetry has suggested that the wall correction factor for a parallel-plate ion chamber in electron beams changes with depth by as much as 6%. To investigate diode detector response with respect to depth, a silicon diode model is constructed and the water/silicon dose ratio at various depths in electron beams is calculated using EGSnrc. The results indicate that, for this particular diode model, the diode response per unit water dose (or water/diode dose ratio) in both 6 and 18 MeV electron beams is flat within 2% versus depth, from near the phantom surface to the depth of R50 (with calculation uncertainty <0.3%). This suggests that there must be some other correction factors for ion chambers that counter-balance the large wall correction factor at depth in electron beams. In addition, the beam quality and field-size dependence of the diode model are also calculated. The results show that the water/diode dose ratio remains constant within 2% over the electron energy range from 6 to 18 MeV. The water/diode dose ratio does not depend on field size as long as the incident electron beam is broad and the electron energy is high. However, for a very small beam size (1 X 1 cm(2)) and low electron energy (6 MeV), the water/diode dose ratio may decrease by more than 2% compared to that of a broad beam.

Investigating Bandgap Energies, Materials, and Design of Light-Emitting Diodes

ERIC Educational Resources Information Center

Wagner, Eugene P., II

2016-01-01

A student laboratory experiment to investigate the intrinsic and extrinsic bandgaps, dopant materials, and diode design in light-emitting diodes (LEDs) is presented. The LED intrinsic bandgap is determined by passing a small constant current through the diode and recording the junction voltage variation with temperature. A second visible…

Diode and Diode Circuits, a Programmed Text.

ERIC Educational Resources Information Center

Balabanian, Norman; Kirwin, Gerald J.

This programed text on diode and diode circuits was developed under contract with the United States Office of Education as Number 4 in a series of materials for use in an electrical engineering sequence. It is intended as a supplement to a regular text and other instructional material. (DH)

Low Temperature Thermometry Using Inexpensive Silicon Diodes.

ERIC Educational Resources Information Center

Waltham, N. R.; And Others

1981-01-01

Describes the use of silicon diodes for low temperature thermometry in the teaching laboratory. A simple and inexpensive circuit for display of the diode forward voltage under constant current conditions is described, and its application in the evaluation of low cost silicon diodes as low temperature thermometers is presented. (SK)

11.72 sq cm SiC Wafer-scale Interconnected 64 kA PiN Diode

DTIC Science & Technology

2012-01-30

drop of 10.3 V. The dissipated energy was 382 J and the calculated action exceeded 1.7 MA2 -s. Preliminary development of high voltage interconnection...scale diode action (surge current integral), a key reliability parameter, exceeded 1.7 MA2 -s. Figure 6: The wafer-scale interconnected diode...scale diode was 382 J and the calculated action exceeded 1.7 MA2 -sec. High voltage operation of PiN diodes, thyristors, and other semiconductor

Direct diode-pumped Kerr Lens 13 fs Ti:sapphire ultrafast oscillator using a single blue laser diode

DOE PAGES

Backus, Sterling; Colorado State Univ., Fort Collins, CO; Kirchner, Matt; ...

2017-05-18

We demonstrate a direct diode-pumped Kerr Lens Modelocked Ti:sapphire laser producing 13 fs pulses with 1.85 nJ energy at 78 MHz (145 mW) using a single laser diode pump. We also present a similar laser using three spectrally combined diodes, generating >300 mW output power with >50 nm bandwidth. We discuss the use of far-from TEM 00 pump laser sources, and their effect on the Kerr lens modelocking process.

Direct diode-pumped Kerr Lens 13 fs Ti:sapphire ultrafast oscillator using a single blue laser diode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Backus, Sterling; Colorado State Univ., Fort Collins, CO; Kirchner, Matt

We demonstrate a direct diode-pumped Kerr Lens Modelocked Ti:sapphire laser producing 13 fs pulses with 1.85 nJ energy at 78 MHz (145 mW) using a single laser diode pump. We also present a similar laser using three spectrally combined diodes, generating >300 mW output power with >50 nm bandwidth. We discuss the use of far-from TEM 00 pump laser sources, and their effect on the Kerr lens modelocking process.

Plasma-filled diode based on the coaxial gun

NASA Astrophysics Data System (ADS)

Zherlitsyn, A. A.; Kovalchuk, B. M.; Pedin, N. N.

2012-10-01

The paper presents the results of studies of a coaxial gun for a plasma-filled electron diode. Effects of the discharge channel diameter and gun current on characteristics of the plasma and pulse generated in the diode were investigated. The electron beam with maximum energy of ≥1 MeV at the current of ≈100 kA was obtained in the experiments with a plasma-filled diode. The energy of ≈5 kJ with the peak power of ≥100 GW dissipated in the diode.

Plasma-filled diode based on the coaxial gun.

PubMed

Zherlitsyn, A A; Kovalchuk, B M; Pedin, N N

2012-10-01

The paper presents the results of studies of a coaxial gun for a plasma-filled electron diode. Effects of the discharge channel diameter and gun current on characteristics of the plasma and pulse generated in the diode were investigated. The electron beam with maximum energy of ≥1 MeV at the current of ≈100 kA was obtained in the experiments with a plasma-filled diode. The energy of ≈5 kJ with the peak power of ≥100 GW dissipated in the diode.

Efficient, diode-laser-pumped, diode-laser-seeded, high-peak-power Nd:YLF regenerative amplifier.

PubMed

Selker, M D; Afzal, R S; Dallas, J L; Yu, A W

1994-04-15

Optical amplification of 11 orders of magnitude in a microlens-collimated, diode-laser-pumped regenerative amplifier has been demonstrated. The amplifier was seeded with 20-ps pulses from an FM mode-locked oscillator and with 0.9-ns pulses from a modulated diode laser. Seed pulses from both sources were amplified to energies exceeding 2.5 mJ. With the thermoelectric coolers and the Pockels cell electronics neglected, the diode-seeded system exhibited an electrical-to-optical efficiency of 2.2%.

Harmonic Power Generation of IMPATT Diodes.

DTIC Science & Technology

1985-09-01

Performance of Si and GaAs Diodes Taking into Account the Thermal Effect (f = 23 GHz). 136 2.8 CW Results for Second-Harmonic Performance of the Si Uniform...Diode Obtained by Matching l-. Resistance (f = 23 GHz). 138 2.9 CW Results for Second-Harmonic Performance of the Si Uniform Diode Taking into Account ...at V = 28 V, V = 8 V, and Jdc = kA/cm 3. 1 3 181 2.21 Power Output for pin Diode . Taking into Account Circuit Matching Only. 194 2.22 CW Power

Quasi-CW Laser Diode Bar Life Tests

NASA Technical Reports Server (NTRS)

Stephen, Mark A.; Krainak, Michael A.; Dallas, Joseph L.

1997-01-01

NASA's Goddard Space Flight Center is developing technology for satellite-based, high peak power, LIDAR transmitters requiring 3-5 years of reliable operation. Semi-conductor laser diodes provide high efficiency pumping of solid state lasers with the promise of long-lived, reliable operation. 100-watt quasi- CW laser diode bars have been baselined for the next generation laser altimeters. Multi-billion shot lifetimes are required. The authors have monitored the performance of several diodes for billions of shots and investigated operational modes for improving diode lifetime.

Short range laser obstacle detector. [for surface vehicles using laser diode array

NASA Technical Reports Server (NTRS)

Kuriger, W. L. (Inventor)

1973-01-01

A short range obstacle detector for surface vehicles is described which utilizes an array of laser diodes. The diodes operate one at a time, with one diode for each adjacent azimuth sector. A vibrating mirror a short distance above the surface provides continuous scanning in elevation for all azimuth sectors. A diode laser is synchronized with the vibrating mirror to enable one diode laser to be fired, by pulses from a clock pulse source, a number of times during each elevation scan cycle. The time for a given pulse of light to be reflected from an obstacle and received is detected as a measure of range to the obstacle.

Rectified diode response of a multimode quantum cascade laser integrated terahertz transceiver.

PubMed

Dyer, Gregory C; Norquist, Christopher D; Cich, Michael J; Grine, Albert D; Fuller, Charles T; Reno, John L; Wanke, Michael C

2013-02-25

We characterized the DC transport response of a diode embedded in a THz quantum cascade laser as the laser current was changed. The overall response is described by parallel contributions from the rectification of the laser field due to the non-linearity of the diode I-V and from thermally activated transport. Sudden jumps in the diode response when the laser changes from single mode to multi-mode operation, with no corresponding jumps in output power, suggest that the coupling between the diode and laser field depends on the spatial distribution of internal fields. The results demonstrate conclusively that the internal laser field couples directly to the integrated diode.

Shock isolator for diode laser operation on a closed-cycle refrigerator

NASA Technical Reports Server (NTRS)

Jennings, D. E.; Hillman, J. J.

1977-01-01

Closed-cycle helium refrigerators are widely used as coolers for semiconductor diode lasers. These refrigerators pose several difficulties including temperature oscillations due to varying refrigerator capacity during the Solvay cycle, and impact shocks delivered to the diode in the cycle's expansion phase. A shock isolator has been designed to isolate diode lasers from such impact shocks. Slow diode current scans have been made before installation of the shock isolator, with the isolator but no thermal damper, and with both devices. With the isolator and no damper, the diode output frequency oscillated at the refrigerator cycle rate, deviating by plus or minus 40 MHz. Using the isolator and the damper no frequency fluctuation was detected.

Laser diode package with enhanced cooling

DOEpatents

Deri, Robert J [Pleasanton, CA; Kotovsky, Jack [Oakland, CA; Spadaccini, Christopher M [Oakland, CA

2011-09-13

A laser diode package assembly includes a reservoir filled with a fusible metal in close proximity to a laser diode. The fusible metal absorbs heat from the laser diode and undergoes a phase change from solid to liquid during the operation of the laser. The metal absorbs heat during the phase transition. Once the laser diode is turned off, the liquid metal cools off and resolidifies. The reservoir is designed such that that the liquid metal does not leave the reservoir even when in liquid state. The laser diode assembly further includes a lid with one or more fin structures that extend into the reservoir and are in contact with the metal in the reservoir.

Laser diode package with enhanced cooling

DOEpatents

Deri, Robert J [Pleasanton, CA; Kotovsky, Jack [Oakland, CA; Spadaccini, Christopher M [Oakland, CA

2012-06-12

A laser diode package assembly includes a reservoir filled with a fusible metal in close proximity to a laser diode. The fusible metal absorbs heat from the laser diode and undergoes a phase change from solid to liquid during the operation of the laser. The metal absorbs heat during the phase transition. Once the laser diode is turned off, the liquid metal cools off and resolidifies. The reservoir is designed such that that the liquid metal does not leave the reservoir even when in liquid state. The laser diode assembly further includes a lid with one or more fin structures that extend into the reservoir and are in contact with the metal in the reservoir.

Laser diode package with enhanced cooling

DOEpatents

Deri, Robert J; Kotovsky, Jack; Spadaccini, Christopher M

2012-06-26

A laser diode package assembly includes a reservoir filled with a fusible metal in close proximity to a laser diode. The fusible metal absorbs heat from the laser diode and undergoes a phase change from solid to liquid during the operation of the laser. The metal absorbs heat during the phase transition. Once the laser diode is turned off, the liquid metal cools off and resolidifies. The reservoir is designed such that that the liquid metal does not leave the reservoir even when in liquid state. The laser diode assembly further includes a lid with one or more fin structures that extend into the reservoir and are in contact with the metal in the reservoir.

DETECTOR FOR MODULATED AND UNMODULATED SIGNALS

DOEpatents

Patterson, H.H.; Webber, G.H.

1959-08-25

An r-f signal-detecting device is described, which is embodied in a compact coaxial circuit principally comprising a detecting crystal diode and a modulating crystal diode connected in parallel. Incoming modulated r-f signals are demodulated by the detecting crystal diode to furnish an audio input to an audio amplifier. The detecting diode will not, however, produce an audio signal from an unmodulated r-f signal. In order that unmodulated signals may be detected, such incoming signals have a locally produced audio signal superimposed on them at the modulating crystal diode and then the"induced or artificially modulated" signal is reflected toward the detecting diode which in the process of demodulation produces an audio signal for the audio amplifier.

Full-wave receiver architecture for the homodyne motion sensor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Haugen, Peter C.; Dallum, Gregory E.; Welsh, Patrick A.

A homodyne motion sensor or detector based on ultra-wideband radar utilizes the entire received waveform through implementation of a voltage boosting receiver. The receiver includes a receiver input and a receiver output. A first diode is connected to the receiver output. A first charge storage capacitor is connected from between the first diode and the receiver output to ground. A second charge storage capacitor is connected between the receiver input and the first diode. A second diode is connected from between the second charge storage capacitor and the first diode to ground. The dual diode receiver performs voltage boosting ofmore » a RF signal received at the receiver input, thereby enhancing receiver sensitivity.« less

Full-wave receiver architecture for the homodyne motion sensor

DOEpatents

Haugen, Peter C; Dallum, Gregory E; Welsh, Patrick A; Romero, Carlos E

2013-11-19

A homodyne motion sensor or detector based on ultra-wideband radar utilizes the entire received waveform through implementation of a voltage boosting receiver. The receiver includes a receiver input and a receiver output. A first diode is connected to the receiver output. A first charge storage capacitor is connected from between the first diode and the receiver output to ground. A second charge storage capacitor is connected between the receiver input and the first diode. A second diode is connected from between the second charge storage capacitor and the first diode to ground. The dual diode receiver performs voltage boosting of a RF signal received at the receiver input, thereby enhancing receiver sensitivity.

Tests of by-pass diodes at cryogenic temperatures for the KATRIN magnets

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gil, W.; Bolz, H.; Jansen, A.

The Karlsruhe Tritium Neutrino experiment (KATRIN) requires a series of superconducting solenoid magnets for guiding beta-electrons from the source to the detector. By-pass diodes will operate at liquid helium temperatures to protect the superconducting magnets and bus bars in case of quenches. The operation conditions of the by-pass diodes depend on the different magnet systems of KATRIN. Therefore, different diode stacks are designed with adequate copper heat sinks assuming adiabatic conditions. The by-pass diode stacks have been submitted to cold tests both at liquid nitrogen and liquid helium temperatures for checking operation conditions. This report presents the test set upmore » and first results of the diode characteristics at 300 K and 77 K, as well as of endurance tests of the diode stacks at constant current load at 77 K and 4.2 K.« less

Extremely high-brightness kW-class fiber coupled diode lasers with wavelength stabilization

NASA Astrophysics Data System (ADS)

Huang, Robin K.; Chann, Bien; Glenn, John D.

2011-06-01

TeraDiode has produced ultra-high brightness fiber-coupled direct diode lasers. A fiber-coupled direct diode laser with a power level of 1,040 W from a 200 μm core diameter, 0.18 numerical aperture (NA) output fiber at a single center wavelength was demonstrated. This was achieved with a novel beam combining and shaping technique using COTS diode lasers. The fiber-coupled output corresponds to a Beam Parameter Product (BPP) of 18 mm-mrad and is the lowest BPP kW-class direct diode laser yet reported. The laser has been used to demonstrate laser cutting and welding of steel sheet metal up to 6.65 mm thick. Higher brightness fiber-coupled diode lasers, including a module with 418 W of power coupled to a 100 μm, 0.15 NA fiber, have also been demonstrated.

High-power direct-diode laser successes

NASA Astrophysics Data System (ADS)

Haake, John M.; Zediker, Mark S.

2004-06-01

Direct diode laser will become much more prevalent in the solar system of manufacturing due to their high efficiency, small portable size, unique beam profiles, and low ownership costs. There has been many novel applications described for high power direct diode laser [HPDDL] systems but few have been implemented in extreme production environments due to diode and diode system reliability. We discuss several novel applications in which the HPDDL have been implemented and proven reliable and cost-effective in production environments. These applications are laser hardening/surface modification, laser wire feed welding and laser paint stripping. Each of these applications uniquely tests the direct diode laser systems capabilities and confirms their reliability in production environments. A comparison of the advantages direct diode laser versus traditional industrial lasers such as CO2 and Nd:YAG and non-laser technologies such a RF induction, and MIG welders for each of these production applications is presented.

Long pulse diode experiments

NASA Astrophysics Data System (ADS)

McClenahan, Charles R.; Weber, Gerald J.; Omalley, Martin W.; Stewart, Joseph; Rinehart, Larry F.; Buttram, Malcolm T.

1990-10-01

A diode employing a thermionic cathode has produced 80 A beams at 200 kV for at least 6 microseconds. Moreover, the diode operates at rates as high as 1 Hz. EGUN simulations of the experimental geometry agree with the experiments. Finally, simulation of a proposed diode geometry predicts a 1 kA, 500 kV beam.

30 CFR 18.50 - Protection against external arcs and sparks.

Code of Federal Regulations, 2014 CFR

2014-07-01

... volts. (c) A device(s) such as a diode(s) of adequate peak inverse voltage rating and current-carrying capacity to conduct possible fault current through the grounded power conductor. Diode installations shall include: (1) An overcurrent device in series with the diode, the contacts of which are in the machine's...

30 CFR 18.50 - Protection against external arcs and sparks.

Code of Federal Regulations, 2013 CFR

2013-07-01

... volts. (c) A device(s) such as a diode(s) of adequate peak inverse voltage rating and current-carrying capacity to conduct possible fault current through the grounded power conductor. Diode installations shall include: (1) An overcurrent device in series with the diode, the contacts of which are in the machine's...

30 CFR 18.50 - Protection against external arcs and sparks.

Code of Federal Regulations, 2012 CFR

2012-07-01

... volts. (c) A device(s) such as a diode(s) of adequate peak inverse voltage rating and current-carrying capacity to conduct possible fault current through the grounded power conductor. Diode installations shall include: (1) An overcurrent device in series with the diode, the contacts of which are in the machine's...

Strain tunable light emitting diodes with germanium P-I-N heterojunctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lagally, Max G; Sanchez Perez, Jose Roberto

Tunable p-i-n diodes comprising Ge heterojunction structures are provided. Also provided are methods for making and using the tunable p-i-n diodes. Tunability is provided by adjusting the tensile strain in the p-i-n heterojunction structure, which enables the diodes to emit radiation over a range of wavelengths.

Estimating p-n Diode Bulk Parameters, Bandgap Energy and Absolute Zero by a Simple Experiment

ERIC Educational Resources Information Center

Ocaya, R. O.; Dejene, F. B.

2007-01-01

This paper presents a straightforward but interesting experimental method for p-n diode characterization. The method differs substantially from many approaches in diode characterization by offering much tighter control over the temperature and current variables. The method allows the determination of important diode constants such as temperature…

Microwave noise measurements on double barrier resonant tunneling diodes

NASA Astrophysics Data System (ADS)

Kwaspen, J. J. M.; Heyker, H. C.; Demarteau, J. I. M.; Vanderoer, T. G.

1990-12-01

Double Barrier Resonant Tunneling (DBRT) diodes have nonlinear current voltage characteristics with Negative Differential Resistance (NDR) regions. Biased in one of these NDR regions, the DBRT diode can be used for microwave amplification purposes, so knowledge of the diode's noise behavior is important from a physics point of view. Two noise parameter measurement methods were developed in which the DBRT diode is used in a reflection amplifier configuration with circulator to transform the active one port device into an active two port with separate input and output ports. The Noise Figure (NF) of the DBRT diode must be deembedded from the NF of the reflection amplifier. An equation for the NF of the DBRT diode is derived. Two different measurement methods are used. A (complicated) more exact method uses the measured S parameters of the actual circulator and accounts for reflections at the noise source, NF meter and DBRT diode. A mathematically simple method (three versions) uses only scalar data collected by the NF meter. The results from these two methods are compared and they coincide well.

Passive Optical Locking Techniques for Diode Lasers

NASA Astrophysics Data System (ADS)

Zhang, Quan

1995-01-01

Most current diode-based nonlinear frequency converters utilize electronic frequency locking techniques. However, this type of locking technique typically involves very complex electronics, and suffers the 'power-drop' problem. This dissertation is devoted to the development of an all-optical passive locking technique that locks the diode laser frequency to the external cavity resonance stably without using any kind of electronic servo. The amplitude noise problem associated with the strong optical locking has been studied. Single-mode operation of a passively locked single-stripe diode with an amplitude stability better than 1% has been achieved. This passive optical locking technique applies to broad-area diodes as well as single-stripe diodes, and can be easily used to generate blue light. A schematic of a milliwatt level blue laser based on the single-stripe diode locking technique has been proposed. A 120 mW 467 nm blue laser has been built using the tapered amplifier locking technique. In addition to diode-based blue lasers, this passive locking technique has applications in nonlinear frequency conversions, resonant spectroscopy, particle counter devices, telecommunications, and medical devices.

High-power direct diode laser output by spectral beam combining

NASA Astrophysics Data System (ADS)

Tan, Hao; Meng, Huicheng; Ruan, Xu; Du, Weichuan; Wang, Zhao

2018-03-01

We demonstrate a spectral beam combining scheme based on multiple mini-bar stacks, which have more diode laser combining elements, to increase the combined diode laser power and realize equal beam quality in both the fast and slow axes. A spectral beam combining diode laser output of 1130 W is achieved with an operating current of 75 A. When a 9.6 X de-magnifying telescope is introduced between the output mirror and the diffraction grating, to restrain cross-talk among diode laser emitters, a 710 W spectral beam combining diode laser output is achieved at the operating current of 70 A, and the beam quality on the fast and slow axes of the combined beam is about 7.5 mm mrad and 7.3 mm mrad respectively. The power reduction is caused by the existence of a couple resonator between the rear facet of the diode laser and the fast axis collimation lens, and it should be eliminated by using diode laser chips with higher front facet transmission efficiency and a fast axis collimation lens with lower residual reflectivity.

Guidelines on the implementation of diode in vivo dosimetry programs for photon and electron external beam therapy.

PubMed

Alecu, R; Loomis, T; Alecu, J; Ochran, T

1999-01-01

Semiconductor diodes offer many advantages for clinical dosimetry: high sensitivity, real-time readout, simple instrumentation, robustness and air pressure independence. The feasibility and usefulness of in vivo dosimetry with diodes has been shown by numerous publications, but very few, if any, refer to the utilization of diodes in electron beam dosimetry. The purpose of this paper is to present our methods for implementing an effective IVD program for external beam therapy with photons and electrons and to evaluate a new type of diodes. Methods of deciding on reasonable action levels along with calibration procedures, established according to the type of measurements intended to be performed and the action limits, are discussed. Correction factors to account for nonreference clinical conditions for new types of diodes (designed for photon and electron beams) are presented and compared with those required by older models commercially available. The possibilities and limitations of each type of diode are presented, emphasizing the importance of using the appropriate diode for each task and energy range.

Electronic and Interfacial Properties of PD/6H-SiC Schottky Diode Gas Sensors

NASA Technical Reports Server (NTRS)

Chen, Liang-Yu; Hunter, Gary W.; Neudeck, Philip G.; Bansal, Gaurav; Petit, Jeremy B.; Knight, Dak; Liu, Chung-Chiun; Wu, Qinghai

1996-01-01

Pd/SiC Schottky diodes detect hydrogen and hydrocarbons with high sensitivity. Variation of the diode temperature from 100 C to 200 C shows that the diode sensitivity to propylene is temperature dependent. Long-term heat treating at 425 C up to 140 hours is carried out to determine the effect of extended heat treating on the diode properties and gas sensitivity. The heat treating significantly affects the diode's capacitive characteristics, but the diode's current carrying characteristics are much more stable with a large response to hydrogen. Scanning Electron Microscopy and X-ray Spectrometry studies of the Pd surface after the heating show cluster formation and background regions with grain structure observed in both regions. The Pd and Si concentrations vary between grains. Auger Electron Spectroscopy depth profiles revealed that the heat treating promoted interdiffusion and reaction between the Pd and SiC dw broadened the interface region. This work shows that Pd/SiC Schottky diodes have significant potential as high temperature gas sensors, but stabilization of the structure is necessary to insure their repeatability in long-term, high temperature applications.

Testing of Diode-Clamping in an Inductive Pulsed Plasma Thruster Circuit

NASA Technical Reports Server (NTRS)

Toftul, Alexandra; Polzin, Kurt A.; Martin, Adam K.; Hudgins, Jerry L.

2014-01-01

Testing of a 5.5 kV silicon (Si) diode and 5.8 kV prototype silicon carbide (SiC) diode in an inductive pulsed plasma thruster (IPPT) circuit was performed to obtain a comparison of the resulting circuit recapture efficiency,eta(sub r), defined as the percentage of the initial charge energy remaining on the capacitor bank after the diode interrupts the current. The diode was placed in a pulsed circuit in series with a silicon controlled rectifier (SCR) switch, and the voltages across different components and current waveforms were collected over a range of capacitor charge voltages. Reverse recovery parameters, including turn-off time and peak reverse recovery current, were measured and capacitor voltage waveforms were used to determine the recapture efficiency for each case. The Si fast recovery diode in the circuit was shown to yield a recapture efficiency of up to 20% for the conditions tested, while the SiC diode further increased recapture efficiency to nearly 30%. The data presented show that fast recovery diodes operate on a timescale that permits them to clamp the discharge quickly after the first half cycle, supporting the idea that diode-clamping in IPPT circuit reduces energy dissipation that occurs after the first half cycle

Effect of interface layer on the performance of high power diode laser arrays

NASA Astrophysics Data System (ADS)

Zhang, Pu; Wang, Jingwei; Xiong, Lingling; Li, Xiaoning; Hou, Dong; Liu, Xingsheng

2015-02-01

Packaging is an important part of high power diode laser (HPLD) development and has become one of the key factors affecting the performance of high power diode lasers. In the package structure of HPLD, the interface layer of die bonding has significant effects on the thermal behavior of high power diode laser packages and most degradations and failures in high power diode laser packages are directly related to the interface layer. In this work, the effects of interface layer on the performance of high power diode laser array were studied numerically by modeling and experimentally. Firstly, numerical simulations using finite element method (FEM) were conducted to analyze the effects of voids in the interface layer on the temperature rise in active region of diode laser array. The correlation between junction temperature rise and voids was analyzed. According to the numerical simulation results, it was found that the local temperature rise of active region originated from the voids in the solder layer will lead to wavelength shift of some emitters. Secondly, the effects of solder interface layer on the spectrum properties of high power diode laser array were studied. It showed that the spectrum shape of diode laser array appeared "right shoulder" or "multi-peaks", which were related to the voids in the solder interface layer. Finally, "void-free" techniques were developed to minimize the voids in the solder interface layer and achieve high power diode lasers with better optical-electrical performances.

Entrance dose measurements for in‐vivo diode dosimetry: Comparison of correction factors for two types of commercial silicon diode detectors

PubMed Central

Zhu, X. R.

2000-01-01

Silicon diode dosimeters have been used routinely for in‐vivo dosimetry. Despite their popularity, an appropriate implementation of an in‐vivo dosimetry program using diode detectors remains a challenge for clinical physicists. One common approach is to relate the diode readout to the entrance dose, that is, dose to the reference depth of maximum dose such as dmax for the 10×10 cm2 field. Various correction factors are needed in order to properly infer the entrance dose from the diode readout, depending on field sizes, target‐to‐surface distances (TSD), and accessories (such as wedges and compensate filters). In some clinical practices, however, no correction factor is used. In this case, a diode‐dosimeter‐based in‐vivo dosimetry program may not serve the purpose effectively; that is, to provide an overall check of the dosimetry procedure. In this paper, we provide a formula to relate the diode readout to the entrance dose. Correction factors for TSD, field size, and wedges used in this formula are also clearly defined. Two types of commercial diode detectors, ISORAD (n‐type) and the newly available QED (p‐type) (Sun Nuclear Corporation), are studied. We compared correction factors for TSDs, field sizes, and wedges. Our results are consistent with the theory of radiation damage of silicon diodes. Radiation damage has been shown to be more serious for n‐type than for p‐type detectors. In general, both types of diode dosimeters require correction factors depending on beam energy, TSD, field size, and wedge. The magnitudes of corrections for QED (p‐type) diodes are smaller than ISORAD detectors. PACS number(s): 87.66.–a, 87.52.–g PMID:11674824

p-n Junction Diodes Fabricated on Si-Si/Ge Heteroepitaxial Films

NASA Technical Reports Server (NTRS)

Das, K.; Mazumder, M. D. A.; Hall, H.; Alterovitz, Samuel A. (Technical Monitor)

2000-01-01

A set of photolithographic masks was designed for the fabrication of diodes in the Si-Si/Ge material system. Fabrication was performed on samples obtained from two different wafers: (1) a complete HBT structure with an n (Si emitter), p (Si/Ge base), and an n/n+ (Si collector/sub-collector) deposited epitaxially (MBE) on a high resistivity p-Si substrate, (2) an HBT structure where epitaxial growth was terminated after the p-type base (Si/Ge) layer deposition. Two different process runs were attempted for the fabrication of Si-Si/Ge (n-p) and Si/Ge-Si (p-n) junction diodes formed between the emitter-base and base-collector layers, respectively, of the Si-Si/Ge-Si HBT structure. One of the processes employed a plasma etching step to expose the p-layer in the structure (1) and to expose the e-layer in structure (2). The Contact metallization used for these diodes was a Cu-based metallization scheme that was developed during the first year of the grant. The plasma-etched base-collector diodes on structure (2) exhibited well-behaved diode-like characteristics. However, the plasma-etched emitter-base diodes demonstrated back-to-back diode characteristics. These back-to back characteristics were probably due to complete etching of the base-layer, yielding a p-n-p diode. The deep implantation process yielded rectifying diodes with asymmetric forward and reverse characteristics. The ideality factor of these diodes were between 1.6 -2.1, indicating that the quality of the MBE grown epitaxial films was not sufficiently high, and also incomplete annealing of the implantation damage. Further study will be conducted on CVD grown films, which are expected to have higher epitaxial quality.

Monte Carlo-based diode design for correction-less small field dosimetry.

PubMed

Charles, P H; Crowe, S B; Kairn, T; Knight, R T; Hill, B; Kenny, J; Langton, C M; Trapp, J V

2013-07-07

Due to their small collecting volume, diodes are commonly used in small field dosimetry. However, the relative sensitivity of a diode increases with decreasing small field size. Conversely, small air gaps have been shown to cause a significant decrease in the sensitivity of a detector as the field size is decreased. Therefore, this study uses Monte Carlo simulations to look at introducing air upstream to diodes such that they measure with a constant sensitivity across all field sizes in small field dosimetry. Varying thicknesses of air were introduced onto the upstream end of two commercial diodes (PTW 60016 photon diode and PTW 60017 electron diode), as well as a theoretical unenclosed silicon chip using field sizes as small as 5 mm × 5 mm. The metric D(w,Q)/D(Det,Q) used in this study represents the ratio of the dose to a point of water to the dose to the diode active volume, for a particular field size and location. The optimal thickness of air required to provide a constant sensitivity across all small field sizes was found by plotting D(w,Q)/D(Det,Q) as a function of introduced air gap size for various field sizes, and finding the intersection point of these plots. That is, the point at which D(w,Q)/D(Det,Q) was constant for all field sizes was found. The optimal thickness of air was calculated to be 3.3, 1.15 and 0.10 mm for the photon diode, electron diode and unenclosed silicon chip, respectively. The variation in these results was due to the different design of each detector. When calculated with the new diode design incorporating the upstream air gap, k(f(clin),f(msr))(Q(clin),Q(msr)) was equal to unity to within statistical uncertainty (0.5%) for all three diodes. Cross-axis profile measurements were also improved with the new detector design. The upstream air gap could be implanted on the commercial diodes via a cap consisting of the air cavity surrounded by water equivalent material. The results for the unclosed silicon chip show that an ideal small field dosimetry diode could be created by using a silicon chip with a small amount of air above it.

Study and optimization of negative polarity rod pinch diode as flash radiography source at 4.5 MV

DOE Office of Scientific and Technical Information (OSTI.GOV)

Etchessahar, Bertrand; Bicrel, Beatrice; Cassany, Bruno

2012-09-15

The negative polarity rod pinch diode (NPRPD) is a potential millimeter spot size radiography source for high voltage generators (4 to 8 MV) [Cooperstein et al., 'Considerations of rod-pinch diode operation in negative polarity for radiography,' in Proceedings of the 14th IEEE Pulsed Power Conference, 2003, pp. 975-978]. The NPRPD consists of a small diameter (few mm) cylindrical anode extending from the front end of the vacuum cell through a thin annular cathode, held by a central conductor. The polarity has been inverted when compared to the original rod pinch diode [Cooperstein et al., 'Theoretical modeling and experimental characterization ofmore » a rod-pinch diode,' Phys. Plasmas 8(10), 4618-4636 (2001)] in order to take advantage from the maximal x-ray emission toward the anode holder at such a voltage [Swanekamp et al., 'Evaluation of self-magnetically pinched diodes up to 10 MV as high resolution flash X-ray sources,' IEEE Trans. Plasma Sci. 32(5), 2004-2016 (2004). We have studied this diode at 4.5 MV, driven by the ASTERIX generator [Raboisson et al., 'ASTERIX, a high intensity X-ray generator,' in Proceedings of the 7th IEEE Pulsed Power Conference, 1989, pp. 567-570.]. This generator, made up of a capacitor bank and a Blumlein line, was initially designed to test the behavior of electronic devices under irradiation. In our experiments, the vacuum diode has been modified in order to set up flash a radiographic diode [Etchessahar et al., 'Negative polarity rod pinch diode experiments on the ASTERIX generator,' in Conference Records-Abstracts, 37th IEEE International Conference on Plasma Science, 2010]. The experiments and numerical simulations presented here allowed the observation and analysis of various physical phenomena associated with the diode operation. Also, the influence of several experimental parameters, such as cathode and anode diameters, materials and surface states, was examined. In order to achieve the most comprehensive characterization of the diode, both optical and x-ray diagnostics were used, including high speed multi-image ICCD (intensified CCD) cameras, streak camera, dosimeters, spot size measurements, and pinhole cameras. A set of new results have been obtained through this study. The plasma emission from the anode and cathode surfaces and its expansion appear to be critical for the diode functioning. Also, for the first time, potential sources of diode instability were identified. Finally, an optimal and stable diode configuration was found with the following parameters: 52 rad at 1 m (in Al) and 2.2 mm spot size.« less

Study of degradation processes kinetics in ohmic contacts of resonant tunneling diodes based on nanoscale AlAs/GaAs heterostructures under influence of temperature

NASA Astrophysics Data System (ADS)

Makeev, M. O.; Meshkov, S. A.

2017-07-01

The artificial aging of resonant tunneling diodes based on nanoscale AlAs/GaAs heterostructures was conducted. As a result of the thermal influence resonant tunneling diodes IV curves degrade firstly due to ohmic contacts' degradation. To assess AlAs/GaAs resonant tunneling diodes degradation level and to predict their reliability, a functional dependence of the contact resistance of resonant tunneling diode AuGeNi ohmic contacts on time and temperature was offered.

Holographic injection locking of a broad area laser diode via a photorefractive thin-film device.

PubMed

van Voorst, P D; de Wit, M R; Offerhaus, H L; Tay, S; Thomas, J; Peyghambarian, N; Boller, K-J

2007-12-24

We demonstrate locking of a high power broad area laser diode to a single frequency using holographic feedback from a photorefractive polymer thin-film device for the first time. A four-wave mixing setup is used to generate feedback for the broad area diode at the wavelength of the single frequency source (Ti:Sapphire laser) while the spatial distribution adapts to the preferred profile of the broad area diode. The result is an injection-locked broad area diode emitting with a linewidth comparable to the Ti:Sapphire laser.

Lattice-Matched p-GaAsSb/n-InP Backward Diodes Operating at Zero Bias for Millimeter-Wave Applications

NASA Astrophysics Data System (ADS)

Takahashi, Tsuyoshi; Sato, Masaru; Nakasha, Yasuhiro; Hara, Naoki

2012-09-01

Backward diodes consisting of a heterojunction of p-GaAs0.51Sb0.49/n-InP, which was lattice matched to an InP substrate, were fabricated for the first time and investigated for their characteristics. The lattice-matched heterojunction is effective in preventing surface defects after crystal growth of the diodes. The backward diodes indicated a curvature coefficient of -17.6 V-1, which is sufficiently large for zero-bias operation. Voltage sensitivity of 338 V/W was obtained at 94 GHz by use of the circular mesa diode of 2.0 µm diameter. Optimum voltage sensitivity of 1603 V/W was estimated when the input impedance was completely matched with the diodes.

Gallium phosphide high temperature diodes

NASA Technical Reports Server (NTRS)

Chaffin, R. J.; Dawson, L. R.

1981-01-01

High temperature (300 C) diodes for geothermal and other energy applications were developed. A comparison of reverse leakage currents of Si, GaAs, and GaP was made. Diodes made from GaP should be usable to 500 C. A Liquid Phase Epitaxy (LPE) process for producing high quality, grown junction GaP diodes is described. This process uses low vapor pressure Mg as a dopant which allows multiple boat growth in the same LPE run. These LPE wafers were cut into die and metallized to make the diodes. These diodes produce leakage currents below ten to the -9th power A/sq cm at 400 C while exhibiting good high temperature rectification characteristics. High temperature life test data is presented which shows exceptional stability of the V-I characteristics.

Various vibration modes in a silicon ring resonator driven by p–n diode actuators formed in the lateral direction

NASA Astrophysics Data System (ADS)

Tsushima, Takafumi; Asahi, Yoichi; Tanigawa, Hiroshi; Furutsuka, Takashi; Suzuki, Kenichiro

2018-06-01

In this paper, we describe p–n diode actuators that are formed in the lateral direction on resonators. Because previously reported p–n diode actuators, which were driven by a force parallel to the electrostatic force induced in a p–n diode, were fabricated in the perpendicular direction to the surface, the fabrication process to satisfy the requirement of realizing a p–n junction set in the middle of the plate thickness has been difficult. The resonators in this work are driven by p–n diodes formed in the lateral direction, making the process easy. We have fabricated a silicon ring resonator that has in-plane vibration using p–n–p and n–p–n diode actuators formed in the lateral direction. First, we consider a space charge model that can sufficiently accurately describe the force induced in p–n diode actuators and compare it with the capacitance model used in most computer simulations. Then, we show that multiplying the vibration amplitude calculated by computer simulation by the modification coefficient of 4/3 provides the vibration amplitude in the p–n diode actuators. Good agreement of the theory with experimental results of the in-plane vibration measured for silicon ring resonators is obtained. The computer simulation is very useful for evaluating various vibration modes in resonators driven by the p–n diode actuators. The small amplitude of the p–n diode actuator measured in this work is expected to increase greatly with increased doping of the actuator.

The Effect of Diode Laser With Different Parameters on Root Fracture During Irrigation Procedure.

PubMed

Karataş, Ertuğrul; Arslan, Hakan; Topçuoğlu, Hüseyin Sinan; Yılmaz, Cenk Burak; Yeter, Kübra Yesildal; Ayrancı, Leyla Benan

2016-06-01

The aim of this study is to compare the effect of a single diode laser application and agitation of EDTA with diode laser with different parameters at different time intervals on root fracture. Ninety mandibular incisors were instrumented except the negative control group. The specimens were divided randomly into 10 groups according to final irrigation procedure: (G1) non-instrumented; (G2) distilled water; (G3) 15% EDTA; (G4) ultrasonically agitated EDTA; (G5) single 1.5W/100 Hz Diode laser; (G6) single 3W/100 Hz Diode laser; (G7) 1.5W/100 Hz Diode laser agitation of EDTA for 20 s; (G8) 1.5W/100 Hz Diode laser agitation of EDTA for 40 s; (G9) 3W/100 Hz Diode laser agitation of EDTA for 20 s; and (G10) 3W/100 Hz Diode laser agitation of EDTA for 40 s. The specimens were filled, mounted in acrylic resin, and compression strength test was performed on each specimen. Statistical analysis was carried out using one way ANOVA and Tukey's post hoc tests (P = 0.05). The statistical analysis revealed that there were statistically significant differences among the groups (P < 0.05). Laser-agitated irrigation with a 3W/100 Hz Diode laser for both 20 s and 40 s decreased the fracture resistance of teeth. Copyright © 2015 International Center for Artificial Organs and Transplantation and Wiley Periodicals, Inc.

Electrical and carrier transport properties of the Au/Y2O3/n-GaN metal-insulator-semiconductor (MIS) diode with rare-earth oxide interlayer

NASA Astrophysics Data System (ADS)

Venkata Prasad, C.; Rajagopal Reddy, V.; Choi, Chel-Jong

2017-04-01

The electrical and transport properties of rare-earth Y2O3 on n-type GaN with Au electrode have been investigated by current-voltage and capacitance-voltage techniques at room temperature. The Au/Y2O3/n-GaN metal-insulator-semiconductor (MIS) diode shows a good rectification behavior compared to the Au/n-GaN metal-semiconductor (MS) diode. Statistical analysis showed that a mean barrier height (BH) and ideality factor are 0.78 eV and 1.93, and 0.96 eV and 2.09 for the Au/n-GaN MS and Au/Y2O3/n-GaN MIS diodes, respectively. Results indicate that the high BH is obtained for the MIS diode compared to the MS diode. The BH, ideality factor and series resistance are also estimated by Cheung's function and Norde method. From the forward current-voltage data, the interface state density ( N SS) is estimated for both the MS and MIS Schottky diodes, and found that the estimated N SS is lower for the MIS diode compared to the MS diode. The results reveal that the introduction of Y2O3 interlayer facilitated the reduction of N SS of the Au/n-GaN interface. Experimental results suggest that the Poole-Frenkel emission is a dominant conduction mechanism in the reverse bias region of both Au/n-GaN MS and Au/Y2O3/n-GaN MIS diodes.

Diode Laser for Laryngeal Surgery: a Systematic Review.

PubMed

Arroyo, Helena Hotz; Neri, Larissa; Fussuma, Carina Yuri; Imamura, Rui

2016-04-01

Introduction The diode laser has been frequently used in the management of laryngeal disorders. The portability and functional diversity of this tool make it a reasonable alternative to conventional lasers. However, whether diode laser has been applied in transoral laser microsurgery, the ideal parameters, outcomes, and adverse effects remain unclear. Objective The main objective of this systematic review is to provide a reliable evaluation of the use of diode laser in laryngeal diseases, trying to clarify its ideal parameters in the larynx, as well as its outcomes and complications. Data Synthesis We included eleven studies in the final analysis. From the included articles, we collected data on patient and lesion characteristics, treatment (diode laser's parameters used in surgery), and outcomes related to the laser surgery performed. Only two studies were prospective and there were no randomized controlled trials. Most of the evidence suggests that the diode laser can be a useful tool for treatment of different pathologies in the larynx. In this sense, the parameters must be set depending on the goal (vaporization, section, or coagulation) and the clinical problem. The literature lacks studies on the ideal parameters of the diode laser in laryngeal surgery. The available data indicate that diode laser is a useful tool that should be considered in laryngeal surgeries. Thus, large, well-designed studies correlated with diode compared with other lasers are needed to better estimate its effects.

Fabrication and Characterization of ZnO Langmuir-Blodgett Film and Its Use in Metal-Insulator-Metal Tunnel Diode.

PubMed

Azad, Ibrahim; Ram, Manoj K; Goswami, D Yogi; Stefanakos, Elias

2016-08-23

Metal-insulator-metal tunnel diodes have great potential for use in infrared detection and energy harvesting applications. The quantum based tunneling mechanism of electrons in MIM (metal-insulator-metal) or MIIM (metal-insulator-insulator-metal) diodes can facilitate rectification at THz frequencies. In this study, the required nanometer thin insulating layer (I) in the MIM diode structure was fabricated using the Langmuir-Blodgett technique. The zinc stearate LB film was deposited on Au/Cr coated quartz, FTO, and silicon substrates, and then heat treated by varying the temperature from 100 to 550 °C to obtain nanometer thin ZnO layers. The thin films were characterized by XRD, AFM, FTIR, and cyclic voltammetry methods. The final MIM structure was fabricated by depositing chromium/nickel over the ZnO on Au/Cr film. The current voltage (I-V) characteristics of the diode showed that the conduction mechanism is electron tunneling through the thin insulating layer. The sensitivity of the diodes was as high as 32 V(-1). The diode resistance was ∼80 Ω (at a bias voltage of 0.78 V), and the rectification ratio at that bias point was about 12 (for a voltage swing of ±200 mV). The diode response exhibited significant nonlinearity and high asymmetry at the bias point, very desirable diode performance parameters for IR detection applications.

Diode Laser for Laryngeal Surgery: a Systematic Review

PubMed Central

Arroyo, Helena Hotz; Neri, Larissa; Fussuma, Carina Yuri; Imamura, Rui

2016-01-01

Introduction The diode laser has been frequently used in the management of laryngeal disorders. The portability and functional diversity of this tool make it a reasonable alternative to conventional lasers. However, whether diode laser has been applied in transoral laser microsurgery, the ideal parameters, outcomes, and adverse effects remain unclear. Objective The main objective of this systematic review is to provide a reliable evaluation of the use of diode laser in laryngeal diseases, trying to clarify its ideal parameters in the larynx, as well as its outcomes and complications. Data Synthesis We included eleven studies in the final analysis. From the included articles, we collected data on patient and lesion characteristics, treatment (diode laser's parameters used in surgery), and outcomes related to the laser surgery performed. Only two studies were prospective and there were no randomized controlled trials. Most of the evidence suggests that the diode laser can be a useful tool for treatment of different pathologies in the larynx. In this sense, the parameters must be set depending on the goal (vaporization, section, or coagulation) and the clinical problem. Conclusion: The literature lacks studies on the ideal parameters of the diode laser in laryngeal surgery. The available data indicate that diode laser is a useful tool that should be considered in laryngeal surgeries. Thus, large, well-designed studies correlated with diode compared with other lasers are needed to better estimate its effects. PMID:27096024

Direct-current polarization characteristics of various AlGaAs laser diodes

NASA Technical Reports Server (NTRS)

Fuhr, P. L.

1984-01-01

Polarization characteristics of AlGaAs laser diodes having various device geometries have been measured. Measurements were performed with the laser diodes operating under dc conditions. Results show that laser diodes having different device geometries have optical outputs that exhibit varying degrees of polarization purity. Implications of this result, with respect to incoherent polarization-beam combining, are addressed.

Influence of the anisotropy on the performance of D-band SiC IMPATT diodes

NASA Astrophysics Data System (ADS)

Chen, Qing; Yang, Lin'an; Wang, Shulong; Zhang, Yue; Dai, Yang; Hao, Yue

2015-03-01

Numerical simulation has been made to predict the RF performance of <0001> direction and <> direction p+/n/n-/n+ (single drift region) 4H silicon carbide (4H-SiC) impact-ionization-avalanche-transit-time (IMPATT) diodes for operation at D-band frequencies. We observed that the output performance of 4H-SiC IMPATT diode is sensitive to the crystal direction of the one-dimensional current flow. The simulation results show that <0001> direction 4H-SiC IMPATT diode provides larger breakdown voltage for its lower electron and hole ionization rates and higher dc-to-rf conversion efficiency (η) for its higher ratio of drift zone voltage drop (VD) to breakdown voltage (VB) compared with those for <> direction 4H-SiC IMPATT diode, which lead to higher-millimeter-wave power output for <0001> direction 4H-SiC IMPATT compared to <> direction. However, the quality factor Q for the <> direction 4H-SiC IMPATT diode is lower than that of <0001> direction, which implies that the <> direction 4H-SiC IMPATT diode exhibits better stability and higher growth rate of microwave oscillation compared with <0001> direction 4H-SiC IMPATT diode.

New Submount Requirement of Conductively Cooled Laser Diodes for Lidar Applications

NASA Technical Reports Server (NTRS)

Mo, S. Y.; Cutler, A. D.; Choi, S. H.; Lee, M. H.; Singh, U. N.

2000-01-01

New submount technology is essential for the development of conductively cooled high power diode laser. The simulation and experimental results indicate that thermal conductivity of submount for high power laser-diode must be at least 600 W/m/k or higher for stable operation. We have simulated several theoretical thermal model based on new submount designs and characterized high power diode lasers to determine temperature effects on the performances of laser diodes. The characterization system measures the beam power, output beam profile, temperature distribution, and spectroscopic property of high power diode laser. The characterization system is composed of four main parts: an infrared imaging camera, a CCD camera, a monochromator, and a power meter. Thermal characteristics of two commercial-grade CW 20-W diode laser bars with open heat-sink type were determined with respect to the line shift of emission spectra and beam power stability. The center wavelength of laser emission has a tendency to shift toward longer wavelength as the driving current and heat sink temperature are increased. The increase of heat sink temperature decreases the output power of the laser bar too. Such results lay the guidelines for the design of new submount for high power laser-diodes.

Diode lasers: From laboratory to industry

NASA Astrophysics Data System (ADS)

Nasim, Hira; Jamil, Yasir

2014-03-01

The invention of first laser in 1960 triggered the discovery of several new families of lasers. A rich interplay of different lasing materials resulted in a far better understanding of the phenomena particularly linked with atomic and molecular spectroscopy. Diode lasers have gone through tremendous developments on the forefront of applied physics that have shown novel ways to the researchers. Some interesting attributes of the diode lasers like cost effectiveness, miniature size, high reliability and relative simplicity of use make them good candidates for utilization in various practical applications. Diode lasers are being used by a variety of professionals and in several spectroscopic techniques covering many areas of pure and applied sciences. Diode lasers have revolutionized many fields like optical communication industry, medical science, trace gas monitoring, studies related to biology, analytical chemistry including elemental analysis, war fare studies etc. In this paper the diode laser based technologies and measurement techniques ranging from laboratory research to automated field and industry have been reviewed. The application specific developments of diode lasers and various methods of their utilization particularly during the last decade are discussed comprehensively. A detailed snapshot of the current state of the art diode laser applications is given along with a detailed discussion on the upcoming challenges.

Enhancement of the performance of GaN IMPATT diodes by negative differential mobility

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dai, Yang; Yang, Lin’an, E-mail: layang@xidian.edu.cn; Chen, Qing

2016-05-15

A theoretical analysis of high-efficiency punch-through operation GaN-based terahertz IMPATT diodes has been carried out in this paper. It is shown that the negative differential mobility (NDM) characteristics of GaN coupled with the space charge effect acting as a self-feedback system can markedly increase the drift velocity of injection carriers, and thereby enhance diode performance under appropriate external RF voltage. The behavior of traveling electrons in the transit zone is investigated in detail. It is found that the IMPATT diode with a punch-through structure operating in the NDM mode exhibits superior characteristics compared with the equivalent diode operating in themore » Si-like constant mobility mode. In particular, the NDM-mode diode can tolerate a larger RF voltage swing than that operating in constant mobility mode. Numerical simulation results reveal that the highest efficiency of 26.6% and maximum RF power of 2.29 W can be achieved for the NDM-mode diode at a frequency of 225 GHz. A highest efficiency of 19.0% and maximum RF power of 1.58 W are obtained for the diode with constant mobility.« less

Auger-generated hot carrier current in photo-excited forward biased single quantum well blue light emitting diodes

NASA Astrophysics Data System (ADS)

Espenlaub, Andrew C.; Alhassan, Abdullah I.; Nakamura, Shuji; Weisbuch, Claude; Speck, James S.

2018-04-01

We report on measurements of the photo-modulated current-voltage and electroluminescence characteristics of forward biased single quantum well, blue InGaN/GaN light emitting diodes with and without electron blocking layers. Low intensity resonant optical excitation of the quantum well was observed to induce an additional forward current at constant forward diode bias, in contrast to the usual sense of the photocurrent in photodiodes and solar cells, as well as an increased electroluminescence intensity. The presence of an electron blocking layer only slightly decreased the magnitude of the photo-induced current at constant forward bias. Photo-modulation at constant forward diode current resulted in a reduced diode bias under optical excitation. We argue that this decrease in diode bias at constant current and the increase in forward diode current at constant applied bias can only be due to additional hot carriers being ejected from the quantum well as a result of an increased Auger recombination rate within the quantum well.

Simulative research on the anode plasma dynamics in the high-power electron beam diode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cai, Dan; Liu, Lie; Ju, Jin-Chuan

2015-07-15

Anode plasma generated by electron beams could limit the electrical pulse-length, modify the impedance and stability of diode, and affect the generator to diode power coupling. In this paper, a particle-in-cell code is used to study the dynamics of anode plasma in the high-power electron beam diode. The effect of gas type, dynamic characteristic of ions on the diode operation with bipolar flow model are presented. With anode plasma appearing, the amplitude of diode current is increased due to charge neutralizations of electron flow. The lever of neutralization can be expressed using saturation factor. At same pressure of the anodemore » gas layer, the saturation factor of CO{sub 2} is bigger than the H{sub 2}O vapor, namely, the generation rate of C{sup +} ions is larger than the H{sup +} ions at the same pressure. The transition time of ions in the anode-cathode gap could be used to estimate the time of diode current maximum.« less

Atomistic nature in band-to-band tunneling in two-dimensional silicon pn tunnel diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tabe, Michiharu, E-mail: tabe.michiharu@shizuoka.ac.jp; Tan, Hoang Nhat; Mizuno, Takeshi

We study low-temperature transport properties of two-dimensional (2D) Si tunnel diodes, or Si Esaki diodes, with a lateral layout. In ordinary Si Esaki diodes, interband tunneling current is severely limited because of the law of momentum conservation, while nanoscale Esaki diodes may behave differently due to the dopants in the narrow depletion region, by atomistic effects which release such current limitation. In thin-Si lateral highly doped pn diodes, we find clear signatures of interband tunneling between 2D-subbands involving phonon assistance. More importantly, the tunneling current is sharply enhanced in a narrow voltage range by resonance via a pair of amore » donor- and an acceptor-atom in the pn junction region. Such atomistic behavior is recognized as a general feature showing up only in nanoscale tunnel diodes. In particular, a donor-acceptor pair with deeper ground-state energies is likely to be responsible for such a sharply enhanced current peak, tunable by external biases.« less

Electrical characteristics of TMAH-surface treated Ni/Au/Al2O3/GaN MIS Schottky structures

NASA Astrophysics Data System (ADS)

Reddy, M. Siva Pratap; Lee, Jung-Hee; Jang, Ja-Soon

2014-03-01

The electrical characteristics and reverse leakage mechanisms of tetramethylammonium hydroxide (TMAH) surface-treated Ni/Au/Al2O3/GaN metal-insulator-semiconductor (MIS) diodes were investigated by using the current-voltage ( I-V) and capacitance-voltage ( C-V) characteristics. The MIS diode was formed on n-GaN after etching the AlGaN in the AlGaN/GaN heterostructures. The TMAH-treated MIS diode showed better Schottky characteristics with a lower ideality factor, higher barrier height and lower reverse leakage current compared to the TMAH-free MIS diode. In addition, the TMAH-free MIS diodes exhibited a transition from Poole-Frenkel emission at low voltages to Schottky emission at high voltages, whereas the TMAH-treated MIS diodes showed Schottky emission over the entire voltage range. Reasonable mechanisms for the improved device-performance characteristics in the TMAH-treated MIS diode are discussed in terms of the decreased interface state density or traps associated with an oxide material and the reduced tunneling probability.

Teradiode's high brightness semiconductor lasers

NASA Astrophysics Data System (ADS)

Huang, Robin K.; Chann, Bien; Burgess, James; Lochman, Bryan; Zhou, Wang; Cruz, Mike; Cook, Rob; Dugmore, Dan; Shattuck, Jeff; Tayebati, Parviz

2016-03-01

TeraDiode is manufacturing multi-kW-class ultra-high brightness fiber-coupled direct diode lasers for industrial applications. A fiber-coupled direct diode laser with a power level of 4,680 W from a 100 μm core diameter, <0.08 numerical aperture (NA) output fiber at a single center wavelength was demonstrated. Our TeraBlade industrial platform achieves world-record brightness levels for direct diode lasers. The fiber-coupled output corresponds to a Beam Parameter Product (BPP) of 3.5 mm-mrad and is the lowest BPP multi-kW-class direct diode laser yet reported. This laser is suitable for industrial materials processing applications, including sheet metal cutting and welding. This 4-kW fiber-coupled direct diode laser has comparable brightness to that of industrial fiber lasers and CO2 lasers, and is over 10x brighter than state-of-the-art direct diode lasers. We have also demonstrated novel high peak power lasers and high brightness Mid-Infrared Lasers.

Far field beam pattern of one MW combined beam of laser diode array amplifiers for space power transmission

NASA Technical Reports Server (NTRS)

Kwon, Jin H.; Lee, Ja H.

1989-01-01

The far-field beam pattern and the power-collection efficiency are calculated for a multistage laser-diode-array amplifier consisting of about 200,000 5-W laser diode arrays with random distributions of phase and orientation errors and random diode failures. From the numerical calculation it is found that the far-field beam pattern is little affected by random failures of up to 20 percent of the laser diodes with reference of 80 percent receiving efficiency in the center spot. The random differences in phases among laser diodes due to probable manufacturing errors is allowed to about 0.2 times the wavelength. The maximum allowable orientation error is about 20 percent of the diffraction angle of a single laser diode aperture (about 1 cm). The preliminary results indicate that the amplifier could be used for space beam-power transmission with an efficiency of about 80 percent for a moderate-size (3-m-diameter) receiver placed at a distance of less than 50,000 km.

Metal-Insulator-Semiconductor Diode Consisting of Two-Dimensional Nanomaterials.

PubMed

Jeong, Hyun; Oh, Hye Min; Bang, Seungho; Jeong, Hyeon Jun; An, Sung-Jin; Han, Gang Hee; Kim, Hyun; Yun, Seok Joon; Kim, Ki Kang; Park, Jin Cheol; Lee, Young Hee; Lerondel, Gilles; Jeong, Mun Seok

2016-03-09

We present a novel metal-insulator-semiconductor (MIS) diode consisting of graphene, hexagonal BN, and monolayer MoS2 for application in ultrathin nanoelectronics. The MIS heterojunction structure was fabricated by vertically stacking layered materials using a simple wet chemical transfer method. The stacking of each layer was confirmed by confocal scanning Raman spectroscopy and device performance was evaluated using current versus voltage (I-V) and photocurrent measurements. We clearly observed better current rectification and much higher current flow in the MIS diode than in the p-n junction and the metal-semiconductor diodes made of layered materials. The I-V characteristic curve of the MIS diode indicates that current flows mainly across interfaces as a result of carrier tunneling. Moreover, we observed considerably high photocurrent from the MIS diode under visible light illumination.

Asymmetric anode and cathode extraction structure fast recovery diode

NASA Astrophysics Data System (ADS)

Xie, Jiaqiang; Ma, Li; Gao, Yong

2018-05-01

This paper presents an asymmetric anode structure and cathode extraction fast and soft recovery diode. The device anode is partial-heavily doped and partial-lightly doped. The P+ region is introduced into the cathode. Firstly, the characteristics of the diode are simulated and analyzed. Secondly, the diode was fabricated and its characteristics were tested. The experimental results are in good agreement with the simulation results. The results show that, compared with the P–i–N diode, although the forward conduction characteristic of the diode is declined, the reverse recovery peak current is reduced by 47%, the reverse recovery time is shortened by 20% and the softness factor is doubled. In addition, the breakdown voltage is increased by 10%. Project supported by the National Natural Science Foundation of China (No. 51177133).

Construction of a Visible Diode Laser Source for Free Radical Photochemistry and Spectroscopy Experiments

NASA Technical Reports Server (NTRS)

Newman, Bronjelyn; Halpern, Joshua B.

1997-01-01

Tunable diode lasers are reliable sources of narrow-band light and comparatively cheap. Optical feedback simplifies frequency tuning of the laser diodes. We are building an inexpensive diode laser system incorporating optical feedback from a diffraction grating. The external optical cavity can be used with lasers that emit between 2 and 100 mW, and will also work if they are pulsed, although this will significantly degrade the bandwidth. The diode laser output power and bandwidth are comparable to CW dye lasers used in kinetics and dynamics experiments. However, their cost and maintenance will be much less as will alignment time. We intend to use the diode lasers to investigate CN and C2 kinetics as well as to study dissociation dynamics of atmospherically important molecules.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Qiao, Xianfeng, E-mail: qiaoxianfeng@hotmail.com; Zhao, Chen; Chen, Bingbing

This paper reports a trap-induced photoconductivity in ITO/pentacene/Al diodes by using current-voltage and magneto-conductance measurements. The comparison of photoconductivity between pentacene diodes with and without trap clearly shows that the traps play a critical role in generating photoconductivity. It shows that no observable photoconductivity is detected for trap-free pentacene diodes, while significant photoconductivity is observed in diodes with trap. This is because the initial photogenerated singlet excitons in pentacene can rapidly split into triplet excitons with higher binding energy prior to dissociating into free charge carriers. The generated triplet excitons react with trapped charges to release charge-carriers from traps, leadingmore » to a trap-induced photoconductivity in the single-layer pentacene diodes. Our studies elucidated the formation mechanisms of photoconductivity in pentacene diodes with extremely fast singlet fission rate.« less

Non-reciprocal geometric wave diode by engineering asymmetric shapes of nonlinear materials.

PubMed

Li, Nianbei; Ren, Jie

2014-08-29

Unidirectional nonreciprocal transport is at the heart of many fundamental problems and applications in both science and technology. Here we study the novel design of wave diode devices by engineering asymmetric shapes of nonlinear materials to realize the function of non-reciprocal wave propagations. We first show analytical results revealing that both nonlinearity and asymmetry are necessary to induce such non-reciprocal (asymmetric) wave propagations. Detailed numerical simulations are further performed for a more realistic geometric wave diode model with typical asymmetric shape, where good non-reciprocal wave diode effect is demonstrated. Finally, we discuss the scalability of geometric wave diodes. The results open a flexible way for designing wave diodes efficiently simply through shape engineering of nonlinear materials, which may find broad implications in controlling energy, mass and information transports.

Design and experimental testing of air slab caps which convert commercial electron diodes into dual purpose, correction-free diodes for small field dosimetry.

PubMed

Charles, P H; Cranmer-Sargison, G; Thwaites, D I; Kairn, T; Crowe, S B; Pedrazzini, G; Aland, T; Kenny, J; Langton, C M; Trapp, J V

2014-10-01

Two diodes which do not require correction factors for small field relative output measurements are designed and validated using experimental methodology. This was achieved by adding an air layer above the active volume of the diode detectors, which canceled out the increase in response of the diodes in small fields relative to standard field sizes. Due to the increased density of silicon and other components within a diode, additional electrons are created. In very small fields, a very small air gap acts as an effective filter of electrons with a high angle of incidence. The aim was to design a diode that balanced these perturbations to give a response similar to a water-only geometry. Three thicknesses of air were placed at the proximal end of a PTW 60017 electron diode (PTWe) using an adjustable "air cap". A set of output ratios (ORDet (fclin) ) for square field sizes of side length down to 5 mm was measured using each air thickness and compared to ORDet (fclin) measured using an IBA stereotactic field diode (SFD). kQclin,Qmsr (fclin,fmsr) was transferred from the SFD to the PTWe diode and plotted as a function of air gap thickness for each field size. This enabled the optimal air gap thickness to be obtained by observing which thickness of air was required such that kQclin,Qmsr (fclin,fmsr) was equal to 1.00 at all field sizes. A similar procedure was used to find the optimal air thickness required to make a modified Sun Nuclear EDGE detector (EDGEe) which is "correction-free" in small field relative dosimetry. In addition, the feasibility of experimentally transferring kQclin,Qmsr (fclin,fmsr) values from the SFD to unknown diodes was tested by comparing the experimentally transferred kQclin,Qmsr (fclin,fmsr) values for unmodified PTWe and EDGEe diodes to Monte Carlo simulated values. 1.0 mm of air was required to make the PTWe diode correction-free. This modified diode (PTWeair) produced output factors equivalent to those in water at all field sizes (5-50 mm). The optimal air thickness required for the EDGEe diode was found to be 0.6 mm. The modified diode (EDGEeair) produced output factors equivalent to those in water, except at field sizes of 8 and 10 mm where it measured approximately 2% greater than the relative dose to water. The experimentally calculated kQclin,Qmsr (fclin,fmsr) for both the PTWe and the EDGEe diodes (without air) matched Monte Carlo simulated results, thus proving that it is feasible to transfer kQclin,Qmsr (fclin,fmsr) from one commercially available detector to another using experimental methods and the recommended experimental setup. It is possible to create a diode which does not require corrections for small field output factor measurements. This has been performed and verified experimentally. The ability of a detector to be "correction-free" depends strongly on its design and composition. A nonwater-equivalent detector can only be "correction-free" if competing perturbations of the beam cancel out at all field sizes. This should not be confused with true water equivalency of a detector.

Apparatus for mounting a diode in a microwave circuit

DOEpatents

Liu, Shing-gong

1976-07-27

Apparatus for mounting a diode in a microwave circuit for making electrical contact between the circuit and ground and for dissipation of heat between the diode and a heat sink. The diode, supported on a thermally and electrically conductive member, is resiliently pressed in electrical contact with the microwave circuit. A tapered collar on the member is elastically deformably wedged into a tapered aperture formed in a heat sink. The wedged collar tightens firmly around the member establishing good thermal and electrical conduction from the diode to the heat sink and ground. Disassembly is facilitated because of the elastically deformed collar.

Cryogenic thermal diode heat pipes

NASA Technical Reports Server (NTRS)

Alario, J.

1979-01-01

The development of spiral artery cryogenic thermal diode heat pipes was continued. Ethane was the working fluid and stainless steel the heat pipe material in all cases. The major tasks included: (1) building a liquid blockage (blocking orifice) thermal diode suitable for the HEPP space flight experiment; (2) building a liquid trap thermal diode engineering model; (3) retesting the original liquid blockage engineering model, and (4) investigating the startup dynamics of artery cryogenic thermal diodes. An experimental investigation was also conducted into the wetting characteristics of ethane/stainless steel systems using a specially constructed chamber that permitted in situ observations.

Light ion beam fusion research at Sandia National Laboratories

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yonas, G.

1983-01-01

Data has been collected on PBFA I using three related diode types: (1) the Ampfion diode, (2) the applied field diode, and (3) the pinch reflex diode. Concurrent with these PBFA I experiments, complementary experiments were carried out on Proto I at Sandia, as well as the Lion accelerator at Cornell University, and the Gamble II accelerator at the Naval Research Laboratory. In addition to these experiments, improved electromagnetic particle-in-cell codes and analytical treatments were brought to bear on improving our understanding of diode phenomena. A brief review of some of the results is given.

Light-weight DC to very high voltage DC converter

DOEpatents

Druce, Robert L.; Kirbie, Hugh C.; Newton, Mark A.

1998-01-01

A DC-DC converter capable of generating outputs of 100 KV without a transformer comprises a silicon opening switch (SOS) diode connected to allow a charging current from a capacitor to flow into an inductor. When a specified amount of charge has flowed through the SOS diode, it opens up abruptly; and the consequential collapsing field of the inductor causes a voltage and current reversal that is steered into a load capacitor by an output diode. A switch across the series combination of the capacitor, inductor, and SOS diode closes to periodically reset the SOS diode by inducing a forward-biased current.

Photon detector system

DOEpatents

Ekstrom, Philip A.

1981-01-01

A photon detector includes a semiconductor device, such as a Schottky barrier diode, which has an avalanche breakdown characteristic. The diode is cooled to cryogenic temperatures to eliminate thermally generated charge carriers from the device. The diode is then biased to a voltage level exceeding the avalanche breakdown threshold level such that, upon receipt of a photon, avalanche breakdown occurs. This breakdown is detected by appropriate circuitry which thereafter reduces the diode bias potential to a level below the avalanche breakdown threshold level to terminate the avalanche condition. Subsequently, the bias potential is reapplied to the diode in preparation for detection of a subsequently received photon.

Array size and area impact on nanorectenna performance properties

NASA Astrophysics Data System (ADS)

Arsoy, Elif Gul; Durmaz, Emre Can; Shafique, Atia; Ozcan, Meric; Gurbuz, Yasar

2017-02-01

The metal-insulator-metal (MIM) diodes have high speed and compatibility with integrated circuits (IC's) making MIM diodes very attractive to detect and harvest energy for infrared (IR) regime of the electromagnetic spectrum. Due to the fact that small size of the MIM diodes, it is possible to obtain large volume of devices in same unit area. Hence, MIM diodes offer a feasible solution for nanorectennas (nano rectifiying antenna) in IR regime. The aim of this study is to design and develop MIM diodes as array format coupled with antennas for energy harvesting and IR detection. Moreover, varying number of elements which are 4x4, and 40x30 has been fabricated in parallel having 0.040, 0.065 and 0.080 μm2 diode area. For this work we have studied given type of material; Ti-HfO2-Ni, is used for fabricating MIM diodes as a part of rectenna. The effect of the diode array size is investigated. Furthermore, the effect of the array size is also investigated for larger arrays by applying given type of material set; Cr-HfO2-Ni. The fabrication processes in physical vapor deposition (PVD) systems for the MIM diodes resulted in the devices having high non-linearity and responsivity. Also, to achieve uniform and very thin insulator layer atomic layer deposition (ALD) was used. The nonlinearity 1.5 mA/V2 and responsivity 3 A/W are achieved for Ti-HfO2-Ni MIM diodes under low applied bias of 400 mV. The responsivity and nonlinearity of Cr-HfO2-Ni are found to be 5 A/W and 65 μA/V2, respectively. The current level of Cr-HfO2-Ni and Ti-HfO2-Ni is around μA range therefore corresponding resistance values are in 1-10 kΩ range. The comparison of single and 4x4 elements revealed that 4x4 elements have higher current level hence lower resistance value is obtained for 4x4 elements. The array size is 40x30 elements for Cr-HfO2-Ni type of MIM diodes with 40, 65 nm2 diode areas. By increasing the diode area, the current level increases for same size of array. The current level is increased from10 μA to100 μA with increasing the diode area. Therefore resistance decreased in the range of 10 kΩ and nonlinearity is increased from 58 μA/V2 to 65 μA/V2.

Characterizing a Quantum Cascade Tunable Infrared Laser Differential Absorption Spectrometer (QC-TILDAS) for Measurements of Atmospheric Ammonia

NASA Astrophysics Data System (ADS)

Ellis, R.; Murphy, J. G.; van Haarlem, R.; Pattey, E.; O'Brien, J.

2009-05-01

A compact, fast response Quantum Cascade Tunable Infrared Laser Differential Absorption Spectrometer (QC- TILDAS) for measurements of ammonia has been evaluated under both laboratory and field conditions. Absorption of radiation from a pulsed, thermoelectrically cooled QC laser occurs at reduced pressure in a 76 m path length, 0.5 L volume multiple pass absorption cell. Detection is achieved using a thermoelectrically cooled HgCdTe infrared detector. A novel sampling technique was used, consisting of a short, heated, quartz inlet with a hydrophobic coating to minimize the adsorption of ammonia to surfaces. The inlet contains a critical orifice that reduces the pressure, a virtual impactor for separation of particles and additional ports for delivering ammonia free background air and calibration gas standards. This instrument has been found to have a detection limit of 0.3 ppb with a time resolution of 1 s. The sampling technique has been compared to the results of a conventional lead salt Tunable Diode Laser (TDL) absorption spectrometer during a laboratory intercomparison. Various lengths and types of sample inlet tubing material, heated and unheated, under dry and ambient humidity conditions with ammonia concentrations ranging from 10-1000 ppb were investigated. Preliminary analysis suggests the time response improves with the use of short, PFA tubing sampling lines. No significant improvement was observed when using a heated sampling line and humidity was seen to play an important role on the bi-exponential decay of ammonia. A field intercomparison of the QC-TILDAS with a modified Thermo 42C chemiluminescence based analyzer was also performed at Environment Canada's Centre for Atmospheric Research Experiments (CARE) in the rural town of Egbert, ON between May-July 2008. Background tests and calibrations using two different permeation tube sources and an ammonia gas cylinder were regularly carried out throughout the study. Results indicate a very good correlation (r2>0.9) between the two instruments at the beginning of the study, when regular background subtraction was applied to the QC- TILDAS.

Millimeter distance effects of surface plasmon polaritons in electroformed Al-Al2O3-Ag diodes

NASA Astrophysics Data System (ADS)

Hickmott, T. W.

2017-02-01

Electroforming of metal-insulator-metal diodes is a soft dielectric breakdown that changes the high resistance of as-prepared diodes to a low resistance state. Electroforming of Al-Al2O3-metal diodes with anodic Al2O3 results in voltage-controlled negative resistance in the current-voltage (I-V) characteristics, electroluminescence (EL), and electron emission into vacuum (EM). EL is due to electrons injected at the Al-Al2O3 interface combining with radiative defects in Al2O3. Surface plasmon polaritons (SPPs) are electromagnetic waves that can be excited by photons or electrons. SPPs are confined to a metal-dielectric interface, cause large electric fields in the metal and dielectric, and have ranges of micrometers. The temperature dependence of I-V curves, EL, and EM of a group of electroformed Al-Al2O3-Ag diodes with Al2O3 thicknesses between 12 nm and 20 nm, group A, was measured between 200 K and 300 K. After a sequence of temperature measurements, the Al-Al2O3-Ag diodes, the Al-Al2O3 regions between diodes, and portions of the Ag on the glass region that provides contacts to the diodes are darkened. The range of darkening is >7 mm in a diode with 12 nm of Al2O3 and 2.0-3.5 mm in diodes with Al2O3 thicknesses between 14 nm and 20 nm. Darkening is attributed to the occurrence of SPPs generated by EL photons at the Ag-Al2O3 and Al-Al2O3 interfaces. The results are compared to a second group of Al-Al2O3-Ag diodes with identical Al2O3 thicknesses, group B, that were prepared in the same way as the diodes of group A except for a difference in the deposition of Al films for the two groups. Al-Al2O3-Ag diodes of group B exhibit enhanced EL, which is attributed to spontaneous emission of recombination centers in Al2O3 being enhanced by large electromagnetic fields that are due to SPPs that are generated by EL photons.

Schlieren with a laser diode source

NASA Technical Reports Server (NTRS)

Burner, A. W.; Franke, J. M.

1981-01-01

The use of a laser diode as a light source for a schlieren system designed to study phase objects such as a wind-tunnel flow is explored. A laser diode schlieren photograph and a white light schlieren photograph (zirconium arc source) are presented for comparison. The laser diode has increased sensitivity, compared with light schlieren, without appreciable image degradiation, and is an acceptable source for schlieren flow visualization.

Laser diode technology for coherent communications

NASA Technical Reports Server (NTRS)

Channin, D. J.; Palfrey, S. L.; Toda, M.

1989-01-01

The effect of diode laser characteristics on the overall performance capabilities of coherent communication systems is discussed. In particular, attention is given to optical performance issues for diode lasers in coherent systems, measurements of key performance parameters, and optical requirements for coherent single-channel and multichannel communication systems. The discussion also covers limitations imposed by diode laser optical performance on multichannel system capabilities and implications for future developments.

Probing photo-carrier collection efficiencies of individual silicon nanowire diodes on a wafer substrate.

PubMed

Schmitt, S W; Brönstrup, G; Shalev, G; Srivastava, S K; Bashouti, M Y; Döhler, G H; Christiansen, S H

2014-07-21

Vertically aligned silicon nanowire (SiNW) diodes are promising candidates for the integration into various opto-electronic device concepts for e.g. sensing or solar energy conversion. Individual SiNW p-n diodes have intensively been studied, but to date an assessment of their device performance once integrated on a silicon substrate has not been made. We show that using a scanning electron microscope (SEM) equipped with a nano-manipulator and an optical fiber feed-through for tunable (wavelength, power using a tunable laser source) sample illumination, the dark and illuminated current-voltage (I-V) curve of individual SiNW diodes on the substrate wafer can be measured. Surprisingly, the I-V-curve of the serially coupled system composed of SiNW/wafers is accurately described by an equivalent circuit model of a single diode and diode parameters like series and shunting resistivity, diode ideality factor and photocurrent can be retrieved from a fit. We show that the photo-carrier collection efficiency (PCE) of the integrated diode illuminated with variable wavelength and intensity light directly gives insight into the quality of the device design at the nanoscale. We find that the PCE decreases for high light intensities and photocurrent densities, due to the fact that considerable amounts of photo-excited carriers generated within the substrate lead to a decrease in shunting resistivity of the SiNW diode and deteriorate its rectification. The PCE decreases systematically for smaller wavelengths of visible light, showing the possibility of monitoring the effectiveness of the SiNW device surface passivation using the shown measurement technique. The integrated device was pre-characterized using secondary ion mass spectrometry (SIMS), TCAD simulations and electron beam induced current (EBIC) measurements to validate the properties of the characterized material at the single SiNW diode level.

Current transport mechanisms in mercury cadmium telluride diode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gopal, Vishnu, E-mail: vishnu-46@yahoo.com, E-mail: wdhu@mail.sitp.ac.cn; Li, Qing; He, Jiale

This paper reports the results of modelling of the current-voltage characteristics (I-V) of a planar mid-wave Mercury Cadmium Telluride photodiode in a gate controlled diode experiment. It is reported that the diode exhibits nearly ideal I-V characteristics under the optimum surface potential leading to the minimal surface leakage current. Deviations from the optimum surface potential lead to non ideal I–V characteristics, indicating a strong relationship between the ideality factor of the diode with its surface leakage current. Diode's I–V characteristics have been modelled over a range of gate voltages from −9 V to −2 V. This range of gate voltages includes accumulation,more » flat band, and depletion and inversion conditions below the gate structure of the diode. It is shown that the I–V characteristics of the diode can be very well described by (i) thermal diffusion current, (ii) ohmic shunt current, (iii) photo-current due to background illumination, and (iv) excess current that grows by the process of avalanche multiplication in the gate voltage range from −3 V to −5 V that corresponds to the optimum surface potential. Outside the optimum gate voltage range, the origin of the excess current of the diode is associated with its high surface leakage currents. It is reported that the ohmic shunt current model applies to small surface leakage currents. The higher surface leakage currents exhibit a nonlinear shunt behaviour. It is also shown that the observed zero-bias dynamic resistance of the diode over the entire gate voltage range is the sum of ohmic shunt resistance and estimated zero-bias dynamic resistance of the diode from its thermal saturation current.« less

A novel miniature dynamic microfluidic cell culture platform using electro-osmosis diode pumping.

PubMed

Chang, Jen-Yung; Wang, Shuo; Allen, Jeffrey S; Lee, Seong Hyuk; Chang, Suk Tai; Choi, Young-Ki; Friedrich, Craig; Choi, Chang Kyoung

2014-07-01

An electro-osmosis (EOS) diode pumping platform capable of culturing cells in fluidic cellular micro-environments particularly at low volume flow rates has been developed. Diode pumps have been shown to be a viable alternative to mechanically driven pumps. Typically electrokinetic micro-pumps were limited to low-concentration solutions (≤10 mM). In our approach, surface mount diodes were embedded along the sidewalls of a microchannel to rectify externally applied alternating current into pulsed direct current power across the diodes in order to generate EOS flows. This approach has for the first time generated flows at ultra-low flow rates (from 2.0 nl/s to 12.3 nl/s) in aqueous solutions with concentrations greater than 100 mM. The range of flow was generated by changing the electric field strength applied to the diodes from 0.5 Vpp/cm to 10 Vpp/cm. Embedding an additional diode on the upper surface of the enclosed microchannel increased flow rates further. We characterized the diode pump-driven fluidics in terms of intensities and frequencies of electric inputs, pH values of solutions, and solution types. As part of this study, we found that the growth of A549 human lung cancer cells was positively affected in the microfluidic diode pumping system. Though the chemical reaction compromised the fluidic control overtime, the system could be maintained fully functional over a long time if the solution was changed every hour. In conclusion, the advantage of miniature size and ability to accurately control fluids at ultra-low volume flow rates can make this diode pumping system attractive to lab-on-a-chip applications and biomedical engineering in vitro studies.

A novel miniature dynamic microfluidic cell culture platform using electro-osmosis diode pumping

PubMed Central

Chang, Jen-Yung; Wang, Shuo; Allen, Jeffrey S.; Lee, Seong Hyuk; Chang, Suk Tai; Choi, Young-Ki; Friedrich, Craig; Choi, Chang Kyoung

2014-01-01

An electro-osmosis (EOS) diode pumping platform capable of culturing cells in fluidic cellular micro-environments particularly at low volume flow rates has been developed. Diode pumps have been shown to be a viable alternative to mechanically driven pumps. Typically electrokinetic micro-pumps were limited to low-concentration solutions (≤10 mM). In our approach, surface mount diodes were embedded along the sidewalls of a microchannel to rectify externally applied alternating current into pulsed direct current power across the diodes in order to generate EOS flows. This approach has for the first time generated flows at ultra-low flow rates (from 2.0 nl/s to 12.3 nl/s) in aqueous solutions with concentrations greater than 100 mM. The range of flow was generated by changing the electric field strength applied to the diodes from 0.5 Vpp/cm to 10 Vpp/cm. Embedding an additional diode on the upper surface of the enclosed microchannel increased flow rates further. We characterized the diode pump-driven fluidics in terms of intensities and frequencies of electric inputs, pH values of solutions, and solution types. As part of this study, we found that the growth of A549 human lung cancer cells was positively affected in the microfluidic diode pumping system. Though the chemical reaction compromised the fluidic control overtime, the system could be maintained fully functional over a long time if the solution was changed every hour. In conclusion, the advantage of miniature size and ability to accurately control fluids at ultra-low volume flow rates can make this diode pumping system attractive to lab-on-a-chip applications and biomedical engineering in vitro studies. PMID:25379101

Frequency stabilization of diode-laser-pumped solid state lasers

NASA Technical Reports Server (NTRS)

Byer, Robert L.

1988-01-01

The goal of the NASA Sunlite program is to fly two diode-laser-pumped solid-state lasers on the space shuttle and while doing so to perform a measurement of their frequency stability and temporal coherence. These measurements will be made by combining the outputs of the two lasers on an optical radiation detector and spectrally analyzing the beat note. Diode-laser-pumped solid-state lasers have several characteristics that will make them useful in space borne experiments. First, this laser has high electrical efficiency. Second, it is of a technology that enables scaling to higher powers in the future. Third, the laser can be made extremely reliable, which is crucial for many space based applications. Fourth, they are frequency and amplitude stable and have high temporal coherence. Diode-laser-pumped solid-state lasers are inherently efficient. Recent results have shown 59 percent slope efficiency for a diode-laser-pumped solid-state laser. As for reliability, the laser proposed should be capable of continuous operation. This is possible because the diode lasers can be remote from the solid state gain medium by coupling through optical fibers. Diode lasers are constructed with optical detectors for monitoring their output power built into their mounting case. A computer can actively monitor the output of each diode laser. If it sees any variation in the output power that might indicate a problem, the computer can turn off that diode laser and turn on a backup diode laser. As for stability requirements, it is now generally believed that any laser can be stabilized if the laser has a frequency actuator capable of tuning the laser frequency as far as it is likely to drift in a measurement time.

High Intensity e-beam Diode Development for Flash X-ray Radiography

NASA Astrophysics Data System (ADS)

Oliver, Bryan

2007-11-01

A variety of electron beam diodes are being used and developed for the purpose of creating high-brightness, flash x-ray radiography sources. In these diodes, high energy (multi MeV), high current (multi kA), small spot (multi mm) electron beams are generated and stopped in high atomic number anode-targets (typically Ta or W). Beam stopping in the target creates copious amounts of bremsstrahlung radiation. In addition, beam heating of the target liberates material, either in the form of low density (˜10^12-10^14 cm-3) ion emission or higher density (> 10^15 cm-3) plasma. In all cases, beam/target collective effects dominate the diode and beam characteristics, affecting the radiation properties (dose and spot-size). Recent experiments at Sandia National Laboratories have demonstrated diodes capable of producing > 350 rad@m with 1.7mm FWHM x-ray source distributions. A review of our present theoretical understanding of the diode (s) operation and our experimental and simulation methods to investigate them will be presented. Emphasis will be given to e- beam sources used on state-of-the-art Inductive Voltage Adder (IVA) pulsed-power accelerators. In particular, the physics of magnetically pinched diodes (e.g. the rod-pinch [1,2]), gas-cell focusing diodes [3] and the magnetically immersed [4] diode will be discussed. Various proposed methods to optimize the x-ray intensity and the direction of future diode research will be discussed. [1] G. Cooperstein, et al., Phys. Plasmas 8, 4618 (2001).[2] B.V. Oliver et al., Phys. Plasmas 11, 3976 (2004)[3] B.V. Oliver, et al., IEEE Trans. on Plasma Science 33, 704 (2005).[4] M.G. Mazarakis, et al., Appl. Phys. Lett. 70, 832 (1997)

Power MOSFET-diode-based limiter for high-frequency ultrasound systems.

PubMed

Choi, Hojong; Kim, Min Gon; Cummins, Thomas M; Hwang, Jae Youn; Shung, K Kirk

2014-10-01

The purpose of the limiter circuits used in the ultrasound imaging systems is to pass low-voltage echo signals generated by ultrasonic transducers while preventing high-voltage short pulses transmitted by pulsers from damaging front-end circuits. Resistor-diode-based limiters (a 50 Ω resistor with a single cross-coupled diode pair) have been widely used in pulse-echo measurement and imaging system applications due to their low cost and simple architecture. However, resistor-diode-based limiters may not be suited for high-frequency ultrasound transducer applications since they produce large signal conduction losses at higher frequencies. Therefore, we propose a new limiter architecture utilizing power MOSFETs, which we call a power MOSFET-diode-based limiter. The performance of a power MOSFET-diode-based limiter was evaluated with respect to insertion loss (IL), total harmonic distortion (THD), and response time (RT). We compared these results with those of three other conventional limiter designs and showed that the power MOSFET-diode-based limiter offers the lowest IL (-1.33 dB) and fastest RT (0.10 µs) with the lowest suppressed output voltage (3.47 Vp-p) among all the limiters at 70 MHz. A pulse-echo test was performed to determine how the new limiter affected the sensitivity and bandwidth of the transducer. We found that the sensitivity and bandwidth of the transducer were 130% and 129% greater, respectively, when combined with the new power MOSFET-diode-based limiter versus the resistor-diode-based limiter. Therefore, these results demonstrate that the power MOSFET-diode-based limiter is capable of producing lower signal attenuation than the three conventional limiter designs at higher frequency operation. © The Author(s) 2014.

INTERNATIONAL CONFERENCE ON SEMICONDUCTOR INJECTION LASERS SELCO-87: Degradation phenomena in laser diodes

NASA Astrophysics Data System (ADS)

Beister, G.; Krispin, P.; Maege, J.; Richter, G.; Weber, H.; Rechenberg, I.

1988-11-01

Accelerated tests on GaAlAs/GaAs double heterostructure laser diodes showed, in agreement with earlier results on light-emitting diodes, that ageing appeared in three distinct forms: initial and slow degradation stages, both obeying a logarithmic time dependence, and a superimposed "gradation" (enhancement of the output power). Measurements made by the method of deep level transient spectroscopy during the accelerated tests on these lasers, operated as light-emitting diodes, revealed the appearance right from the beginning of B levels attributed to the antisite GaAs defects. The B levels appeared again in diodes tested in the lasing mode. In the case of a group of 21 laser diodes the mean time-to-failure was 9000 h at 70°C for 5 mW (in accordance with the Weibull statistics of degradation rates).

Diode laser application in soft tissue oral surgery.

PubMed

Azma, Ehsan; Safavi, Nassimeh

2013-01-01

Diode laser with wavelengths ranging from 810 to 980 nm in a continuous or pulsed mode was used as a possible instrument for soft tissue surgery in the oral cavity. Diode laser is one of laser systems in which photons are produced by electric current with wavelengths of 810, 940 and 980nm. The application of diode laser in soft tissue oral surgery has been evaluated from a safety point of view, for facial pigmentation and vascular lesions and in oral surgery excision; for example frenectomy, epulis fissuratum and fibroma. The advantages of laser application are that it provides relatively bloodless surgical and post surgical courses with minimal swelling and scarring. We used diode laser for excisional biopsy of pyogenic granuloma and gingival pigmentation. The diode laser can be used as a modality for oral soft tissue surgery.

Non-Reciprocal Geometric Wave Diode by Engineering Asymmetric Shapes of Nonlinear Materials

PubMed Central

Li, Nianbei; Ren, Jie

2014-01-01

Unidirectional nonreciprocal transport is at the heart of many fundamental problems and applications in both science and technology. Here we study the novel design of wave diode devices by engineering asymmetric shapes of nonlinear materials to realize the function of non-reciprocal wave propagations. We first show analytical results revealing that both nonlinearity and asymmetry are necessary to induce such non-reciprocal (asymmetric) wave propagations. Detailed numerical simulations are further performed for a more realistic geometric wave diode model with typical asymmetric shape, where good non-reciprocal wave diode effect is demonstrated. Finally, we discuss the scalability of geometric wave diodes. The results open a flexible way for designing wave diodes efficiently simply through shape engineering of nonlinear materials, which may find broad implications in controlling energy, mass and information transports. PMID:25169668

Diode Laser Application in Soft Tissue Oral Surgery

PubMed Central

Azma, Ehsan; Safavi, Nassimeh

2013-01-01

Introduction: Diode laser with wavelengths ranging from 810 to 980 nm in a continuous or pulsed mode was used as a possible instrument for soft tissue surgery in the oral cavity. Discussion: Diode laser is one of laser systems in which photons are produced by electric current with wavelengths of 810, 940 and 980nm. The application of diode laser in soft tissue oral surgery has been evaluated from a safety point of view, for facial pigmentation and vascular lesions and in oral surgery excision; for example frenectomy, epulis fissuratum and fibroma. The advantages of laser application are that it provides relatively bloodless surgical and post surgical courses with minimal swelling and scarring. We used diode laser for excisional biopsy of pyogenic granuloma and gingival pigmentation. Conclusion: The diode laser can be used as a modality for oral soft tissue surgery PMID:25606331

High performance Schottky diodes based on indium-gallium-zinc-oxide

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Jiawei; Song, Aimin, E-mail: A.Song@manchester.ac.uk; Xin, Qian

Indium-gallium-zinc-oxide (IGZO) Schottky diodes exhibit excellent performance in comparison with conventional devices used in future flexible high frequency electronics. In this work, a high performance Pt IGZO Schottky diode was presented by using a new fabrication process. An argon/oxygen mixture gas was introduced during the deposition of the Pt layer to reduce the oxygen deficiency at the Schottky interface. The diode showed a high barrier height of 0.92 eV and a low ideality factor of 1.36 from the current–voltage characteristics. Even the radius of the active area was 0.1 mm, and the diode showed a cut-off frequency of 6 MHz in themore » rectifier circuit. Using the diode as a demodulator, a potential application was also demonstrated in this work.« less

Free space broad-bandwidth tunable laser diode based on Littman configuration for 3D profile measurement

NASA Astrophysics Data System (ADS)

Shirazi, Muhammad Faizan; Kim, Pilun; Jeon, Mansik; Kim, Chang-Seok; Kim, Jeehyun

2018-05-01

We developed a tunable laser diode for an optical coherence tomography system that can perform three-dimensional profile measurement using an area scanning technique. The tunable laser diode is designed using an Eagleyard tunable laser diode with a galvano filter. The Littman free space configuration is used to demonstrate laser operation. The line- and bandwidths of this source are 0.27 nm (∼110 GHz) and 43 nm, respectively, at the center wavelength of 860 nm. The output power is 20 mW at an operating current of 150 mA. A step height target is imaged using a wide-area scanning system to show the measurement accuracy of the proposed tunable laser diode. A TEM grid is also imaged to measure the topography and thickness of the sample by proposed tunable laser diode.

Conduction mechanism change with transport oxide layer thickness in oxide hetero-interface diode

NASA Astrophysics Data System (ADS)

Nam, Bu-il; Park, Jong Seo; Lim, Keon-Hee; Ahn, Yong-keon; Lee, Jinwon; Park, Jun-woo; Cho, Nam-Kwang; Lee, Donggun; Lee, Han-Bo-Ram; Kim, Youn Sang

2017-07-01

An effective and facile strategy is proposed to demonstrate an engineered oxide hetero-interface of a thin film diode with a high current density and low operating voltage. The electrical characteristics of an oxide hetero-interface thin film diode are governed by two theoretical models: the space charge-limited current model and the Fowler-Nordheim (F-N) tunneling model. Interestingly, the dominant mechanism strongly depends on the insulator thickness, and the mechanism change occurs at a critical thickness. This paper shows that conduction mechanisms of oxide hetero-interface thin film diodes depend on thicknesses of transport oxide layers and that current densities of these can be exponentially increased through quantum tunneling in the diodes with the thicknesses less than 10 nm. These oxide hetero-interface diodes have great potential for low-powered transparent nanoscale applications.

Wavelength stabilized multi-kW diode laser systems

NASA Astrophysics Data System (ADS)

Köhler, Bernd; Unger, Andreas; Kindervater, Tobias; Drovs, Simon; Wolf, Paul; Hubrich, Ralf; Beczkowiak, Anna; Auch, Stefan; Müntz, Holger; Biesenbach, Jens

2015-03-01

We report on wavelength stabilized high-power diode laser systems with enhanced spectral brightness by means of Volume Holographic Gratings. High-power diode laser modules typically have a relatively broad spectral width of about 3 to 6 nm. In addition the center wavelength shifts by changing the temperature and the driving current, which is obstructive for pumping applications with small absorption bandwidths. Wavelength stabilization of high-power diode laser systems is an important method to increase the efficiency of diode pumped solid-state lasers. It also enables power scaling by dense wavelength multiplexing. To ensure a wide locking range and efficient wavelength stabilization the parameters of the Volume Holographic Grating and the parameters of the diode laser bar have to be adapted carefully. Important parameters are the reflectivity of the Volume Holographic Grating, the reflectivity of the diode laser bar as well as its angular and spectral emission characteristics. In this paper we present detailed data on wavelength stabilized diode laser systems with and without fiber coupling in the spectral range from 634 nm up to 1533 nm. The maximum output power of 2.7 kW was measured for a fiber coupled system (1000 μm, NA 0.22), which was stabilized at a wavelength of 969 nm with a spectral width of only 0.6 nm (90% value). Another example is a narrow line-width diode laser stack, which was stabilized at a wavelength of 1533 nm with a spectral bandwidth below 1 nm and an output power of 835 W.

Short-Term Audiological Results of Diode Laser in Comparison with Manual Perforation in Stapes Surgery

PubMed Central

Hamerschmidt, Rogerio; Saab, Stephanie Sbizera; Carvalho, Bettina; Carmo, Carolina do

2018-01-01

Introduction  Diode laser is a new alternative in stapes surgery for otosclerosis. The present study is the first to compare the short-term results of the surgery performed using diode laser to those obtained through the conventional fenestration technique. Objective  To use audiometry to establish a comparative analysis between the functional results obtained through surgery for otosclerosis using diode laser and the conventional technique. Method  Audiometric evaluation of 12 patients submitted to stapes surgery for otosclerosis, using diode laser or conventional fenestration by needle and drills, between 2014 and 2015. Each group was composed of 6 patients. Pre and post-operative measures were compared for three months in both groups. The speech recognition threshold, the air and bone conduction threshold, as well as the gap between them at 500 Hz, 1 KHz, 2 KHz and 4 KHz were measured. Results  Significant difference in bone conduction and SRT was observed when compared post- and preoperative results in the diode group. However diode and conventional technique groups presented significant differences in air conduction and air-bone gap, suggesting that both can provide functional improvement. Conclusion  Laser stapedotomy is a safe technique with good results. Both laser surgery and the conventional technique have improved the hearing of patients with a discreet advantage for the diode laser. Further prospective and randomized clinical trials are required to disclose all possible benefits of the stapes surgery using diode laser. PMID:29619098

Short-Term Audiological Results of Diode Laser in Comparison with Manual Perforation in Stapes Surgery.

PubMed

Hamerschmidt, Rogerio; Saab, Stephanie Sbizera; Carvalho, Bettina; Carmo, Carolina do

2018-04-01

Introduction  Diode laser is a new alternative in stapes surgery for otosclerosis. The present study is the first to compare the short-term results of the surgery performed using diode laser to those obtained through the conventional fenestration technique. Objective  To use audiometry to establish a comparative analysis between the functional results obtained through surgery for otosclerosis using diode laser and the conventional technique. Method  Audiometric evaluation of 12 patients submitted to stapes surgery for otosclerosis, using diode laser or conventional fenestration by needle and drills, between 2014 and 2015. Each group was composed of 6 patients. Pre and post-operative measures were compared for three months in both groups. The speech recognition threshold, the air and bone conduction threshold, as well as the gap between them at 500 Hz, 1 KHz, 2 KHz and 4 KHz were measured. Results  Significant difference in bone conduction and SRT was observed when compared post- and preoperative results in the diode group. However diode and conventional technique groups presented significant differences in air conduction and air-bone gap, suggesting that both can provide functional improvement. Conclusion  Laser stapedotomy is a safe technique with good results. Both laser surgery and the conventional technique have improved the hearing of patients with a discreet advantage for the diode laser. Further prospective and randomized clinical trials are required to disclose all possible benefits of the stapes surgery using diode laser.

Temperature issues with white laser diodes, calculation and approach for new packages

NASA Astrophysics Data System (ADS)

Lachmayer, Roland; Kloppenburg, Gerolf; Stephan, Serge

2015-01-01

Bright white light sources are of significant importance for automotive front lighting systems. Today's upper class systems mainly use HID or LED light sources. As a further step laser diode based systems offer a high luminance, efficiency and allow the realization of new dynamic and adaptive light functions and styling concepts. The use of white laser diode systems in automotive applications is still limited to laboratories and prototypes even though announcements of laser based front lighting systems have been made. But the environment conditions for vehicles and other industry sectors differ from laboratory conditions. Therefor a model of the system's thermal behavior is set up. The power loss of a laser diode is transported as thermal flux from the junction layer to the diode's case and on to the environment. Therefor its optical power is limited by the maximum junction temperature (for blue diodes typically 125 - 150 °C), the environment temperature and the diode's packaging with its thermal resistances. In a car's headlamp the environment temperature can reach up to 80 °C. While the difference between allowed case temperature and environment temperature is getting small or negative the relevant heat flux also becomes small or negative. In early stages of LED development similar challenges had to be solved. Adapting LED packages to the conditions in a vehicle environment lead to today's efficient and bright headlights. In this paper the need to transfer these results to laser diodes is shown by calculating the diodes lifetimes based on the presented model.

Thin planar package for cooling an array of edge-emitting laser diodes

DOEpatents

Mundinger, David C.; Benett, William J.

1992-01-01

A laser diode array is disclosed that includes a plurality of planar assemblies and active cooling of each assembly. The laser diode array may be operated in a long duty cycle, or in continuous operation. A laser diode bar and a microchannel heat sink are thermally coupled in a compact, thin planar assembly having the laser diode bar located proximate to one edge. In an array, a number of such thin planar assemblies are secured together in a stacked configuration, in close proximity so that the laser diodes are spaced closely. The cooling means includes a microchannel heat sink proximate to the laser diode bar to absorb heat generated by laser operation. To provide the coolant to the microchannels, each thin planar assembly comprises passageways that connect the microchannels to inlet and outlet corridors. Each inlet passageway may comprise a narrow slot that directs coolant into the microchannels and increases the velocity of flow therethrough. The corridors comprises holes extending through each of the assemblies in the array. The inlet and outlet corridors are connected to a conventional coolant circulation system. The laser diode array with active cooling has applications as an optical pump for high power solid state lasers, or by mating the diodes with fiber optic lenses. Further, the arrays can be useful in applications having space constraints and energy limitations, and in military and space applications. The arrays can be incorporated in equipment such as communications devices and active sensors.

Innovative Facet Passivation for High-Brightness Laser Diodes

DTIC Science & Technology

2016-02-05

and anti-reflection (AR) coatings are deposited after cleaving. Edge- emitting laser diodes emit very high optical powers from small emission areas, as...SECURITY CLASSIFICATION OF: The objective of this effort is to increase the power of low fill-factor (20%) laser diode (LD) bars from the present...2012 16-Nov-2015 Approved for Public Release; Distribution Unlimited Final Report: Innovative Facet Passivation for High-Brightness Laser Diodes The

Ruggedized microchannel-cooled laser diode array with self-aligned microlens

DOEpatents

Freitas, Barry L.; Skidmore, Jay A.

2003-11-11

A microchannel-cooled, optically corrected, laser diode array is fabricated by mounting laser diode bars onto Si surfaces. This approach allows for the highest thermal impedance, in a ruggedized, low-cost assembly that includes passive microlens attachment without the need for lens frames. The microlensed laser diode array is usable in all solid-state laser systems that require efficient, directional, narrow bandwidth, high optical power density pump sources.

Non-Laminar Flow Model for the Impedance of a Rod-Pinch Diode

NASA Astrophysics Data System (ADS)

Ottinger, Paul F.; Schumer, Joseph W.; Strasburg, Sean D.; Swanekamp, Stephen B.; Oliver, Bryan V.

2002-12-01

A previous laminar flow model for the rod-pinch diode is extended to include a transverse pressure term to study the effects of non-laminar flow. The non-laminar nature of the flow has a significant impact on the diode impedance. Results show that the introduction of the transverse pressure decreases the diode impedance predicted by the model bringing it into better agreement with experimental data.

High-power laser diodes at various wavelengths

DOE Office of Scientific and Technical Information (OSTI.GOV)

Emanuel, M.A.

High power laser diodes at various wavelengths are described. First, performance and reliability of an optimized large transverse mode diode structure at 808 and 941 nm are presented. Next, data are presented on a 9.5 kW peak power array at 900 nm having a narrow emission bandwidth suitable for pumping Yb:S-FAP laser materials. Finally, results on a fiber-coupled laser diode array at {approx}730 nm are presented.

Remote Powering and Steering of Self-Propelling Microdevices by Modulated Electric Field

NASA Astrophysics Data System (ADS)

Sharma, Rachita; Velev, Orlin

2011-03-01

We have demonstrated a new class of self-propelling particles based on semiconductor diodes powered by an external uniform alternating electric field. The millimeter-sized diodes floating in water rectify the applied voltage. The resulting particle-localized electroosmotic flux propels them in the direction of the cathode or the anode depending on their surface charge. These particles suggest solutions to problems facing self-propelling microdevices, and have potential for a range of additional functions. The next step in this direction is the steering of these devices. We will present a novel technique that allows on-demand steering of these self-propelling diodes. We control remotely their direction of motion by modifying the duty cycle of the applied AC field. The diodes change their direction of motion when a DC component (wave asymmetry) is introduced into the AC signal. The DC component leads to redistribution of the counterions near the diode surface. The electric field resulting from this counterion redistribution exerts a torque on the dipole across the diode, causing its rotation. Thus, the reversal of the direction of the electroosmotic flux caused by field asymmetry leads to reversal of the direction of diode motion. This new principle of steering of self-propelling diodes can find applications in MEMs and micro-robotics.

Comparison of the effect of diode laser versus intense pulsed light in axillary hair removal.

PubMed

Ormiga, Patricia; Ishida, Cleide Eiko; Boechat, Alvaro; Ramos-E-Silva, Marcia

2014-10-01

Devices such as diode laser and intense pulsed light (IPL) are in constant development aiming at permanent hair removal, but there are few comparative studies between these technologies. The objective was to comparatively assess axillary hair removal performed by diode laser and IPL and to obtain parameters of referred pain and evolution response for each method. A comparative prospective, double-blind, and randomized study of axillary hair removal performed by the diode laser and IPL was conducted in 21 females. Six sessions were held with application of the diode laser in one axilla and the IPL in the other, with intervals of 30 days and follow-up of 6 months after the last session. Clinical photographs and digital dermoscopy for hair counts in predefined and fixed fields of the treated areas were performed before, 2 weeks after the sixth session, and 6 months after the end of treatment. A questionnaire to assess the pain was applied. The number of hair shafts was significantly reduced with the diode laser and IPL. The diode laser was more effective, although more painful than the IPL. No serious, adverse, or permanent effects were observed with both technologies. Both diode laser and the IPL are effective, safe, and able to produce lasting results in axillary hair removal.

A two-stage series diode for intense large-area moderate pulsed X rays production.

PubMed

Lai, Dingguo; Qiu, Mengtong; Xu, Qifu; Su, Zhaofeng; Li, Mo; Ren, Shuqing; Huang, Zhongliang

2017-01-01

This paper presents a method for moderate pulsed X rays produced by a series diode, which can be driven by high voltage pulse to generate intense large-area uniform sub-100-keV X rays. A two stage series diode was designed for Flash-II accelerator and experimentally investigated. A compact support system of floating converter/cathode was invented, the extra cathode is floating electrically and mechanically, by withdrawing three support pins several milliseconds before a diode electrical pulse. A double ring cathode was developed to improve the surface electric field and emission stability. The cathode radii and diode separation gap were optimized to enhance the uniformity of X rays and coincidence of the two diode voltages based on the simulation and theoretical calculation. The experimental results show that the two stage series diode can work stably under 700 kV and 300 kA, the average energy of X rays is 86 keV, and the dose is about 296 rad(Si) over 615 cm 2 area with uniformity 2:1 at 5 cm from the last converter. Compared with the single diode, the average X rays' energy reduces from 132 keV to 88 keV, and the proportion of sub-100-keV photons increases from 39% to 69%.

120W, NA_0.15 fiber coupled LD module with 125-μm clad/NA 0.22 fiber by spatial coupling method

NASA Astrophysics Data System (ADS)

Ishige, Yuta; Kaji, Eisaku; Katayama, Etsuji; Ohki, Yutaka; Gajdátsy, Gábor; Cserteg, András.

2018-02-01

We have fabricated a fiber coupled semiconductor laser diode module by means of spatial beam combining of single emitter broad area semiconductor laser diode chips in the 9xx nm band. In the spatial beam multiplexing method, the numerical aperture of the output light from the optical fiber increases by increasing the number of laser diodes coupled into the fiber. To reduce it, we have tried the approach to improving assembly process technology. As a result, we could fabricate laser diode modules having a light output power of 120W or more and 95% power within NA of 0.15 or less from a single optical fiber with 125-μm cladding diameter. Furthermore, we have obtained that the laser diode module maintaining high coupling efficiency can be realized even around the fill factor of 0.95. This has been achieved by improving the optical alignment method regarding the fast axis stack pitch of the laser diodes in the laser diode module. Therefore, without using techniques such as polarization combining and wavelength combining, high output power was realized while keeping small numerical aperture. This contributes to a reduction in unit price per light output power of the pumping laser diode module.

Bulk unipolar diodes formed in GaAs by ion implantation

NASA Astrophysics Data System (ADS)

Hutchinson, S.; Kelly, M. J.; Gwilliam, R.; Sealy, B. J.; Carr, M.

1999-01-01

In an attempt to emulate epitaxially manufactured semiconductor multilayers for microwave device applications, we have produced a camel diode structure in GaAs for the first time, using the tail of a Mg + implant into a molecular beam epitaxially grown n +-n --n + structure. Using a range of ion energies and doses, samples are observed to exhibit bulk unipolar diode characteristics. With low dose and energy, a diode with barrier height of ˜0.8 V and ideality factor ˜1.25 is achieved. 'Punch through' diode characteristics are obtained at high ion dose and energy, some with knee voltages in excess of 7 V.

Theory and experiment on charging and discharging a capacitor through a reverse-biased diode

NASA Astrophysics Data System (ADS)

Roy, Arijit; Mallick, Abhishek; Adhikari, Aparna; Guin, Priyanka; Chatterjee, Dibyendu

2018-06-01

The beauty of a diode lies in its voltage-dependent nonlinear resistance. The voltage on a charging and discharging capacitor through a reverse-biased diode is calculated from basic equations and is found to be in good agreement with experimental measurements. Instead of the exponential dependence of charging and discharging voltages with time for a resistor-capacitor circuit, a linear time dependence is found when the resistor is replaced by a reverse-biased diode. Thus, well controlled positive and negative ramp voltages are obtained from the charging and discharging diode-capacitor circuits. This experiment can readily be performed in an introductory physics and electronics laboratory.

A fluidic diode, valves, and a sequential-loading circuit fabricated on layered paper.

PubMed

Chen, Hong; Cogswell, Jeremy; Anagnostopoulos, Constantine; Faghri, Mohammad

2012-08-21

Current microfluidic paper-based devices lack crucial components for fluid manipulation. We created a fluidic diode fabricated entirely on a single layer of paper to control the wicking of fluids. The fluidic diode is a two-terminal component that promotes or stops wicking along a paper channel. We further constructed a trigger and a delay valve based on the fluidic diode. Furthermore, we demonstrated a high-level functional circuit, consisting of a diode and a delay valve, to manipulate two fluids in a sequential manner. Our study provides new, transformative tools to manipulate fluid in microfluidic paper-based devices.

High-efficiency, low-temperature cesium diodes with lanthanum-hexaboride electrodes

NASA Technical Reports Server (NTRS)

Morris, J. F.

1974-01-01

Lanthanum hexaboride electrodes in 1700 K cesium diodes may triple power outputs compared with those demonstrated for nuclear thermionic space applications. Still greater relative gains seem possible for emitters below 1700 K. Further improvements in cesium diode performance should result from the lower collector temperatures allowed for earth and low power space duties. Decreased temperatures will lessen thermal transport losses that attend thermionic conversion mechanisms. Such advantages will add to those from collector Carnot and electrode effects. If plasma ignition difficulties impede diode temperature reductions, recycling small fractions of the output power could provide ionization. So high efficiency, low temperature cesium diodes with lanthanum hexaboride electrodes appear feasible.

V-shaped resonators for addition of broad-area laser diode arrays

DOEpatents

Liu, Bo; Liu, Yun; Braiman, Yehuda Y.

2012-12-25

A system and method for addition of broad-area semiconductor laser diode arrays are described. The system can include an array of laser diodes, a V-shaped external cavity, and grating systems to provide feedback for phase-locking of the laser diode array. A V-shaped mirror used to couple the laser diode emissions along two optical paths can be a V-shaped prism mirror, a V-shaped stepped mirror or include multiple V-shaped micro-mirrors. The V-shaped external cavity can be a ring cavity. The system can include an external injection laser to further improve coherence and phase-locking.

Light-weight DC to very high voltage DC converter

DOEpatents

Druce, R.L.; Kirbie, H.C.; Newton, M.A.

1998-06-30

A DC-DC converter capable of generating outputs of 100 KV without a transformer comprises a silicon opening switch (SOS) diode connected to allow a charging current from a capacitor to flow into an inductor. When a specified amount of charge has flowed through the SOS diode, it opens up abruptly; and the consequential collapsing field of the inductor causes a voltage and current reversal that is steered into a load capacitor by an output diode. A switch across the series combination of the capacitor, inductor, and SOS diode closes to periodically reset the SOS diode by inducing a forward-biased current. 1 fig.

Constant-current regulator improves tunnel diode threshold-detector performance

NASA Technical Reports Server (NTRS)

Cancro, C. A.

1965-01-01

Grounded-base transistor is placed in a tunnel diode threshold detector circuit, and a bias voltage is applied to the tunnel diode. This provides the threshold detector with maximum voltage output and overload protection.

Tunable diode-laser heterodyne spectrometer for remote observations near 8 microns

NASA Technical Reports Server (NTRS)

Glenar, D.; Kostiuk, T.; Jennings, D. E.; Buhl, D.; Mumma, M. J.

1982-01-01

A diode-laser-based, ultrahigh resolution IR heterodyne spectrometer for laboratory and field use has been developed for operation between 7.5 and 8.5 microns. The local oscillator is a PbSe tunable diode laser kept continuously at operating temperatures of 12-60 K using a closed-cycle cooler. The laser output frequency is controlled and stabilized using a high-precision diode current supply, constant temperature controller, and a shock isolator mounted between the refrigerator cold tip and the diode mount. The system largely employs reflecting optics to minimize losses from internal reflection and absorption and to eliminate chromatic effects. Spectral analysis of the diode-laser output between 0 and 1 GHz reveals excess noise at many diode current settings, which limits the IR spectral regions over which useful heterodyne operation can be achieved. Observations have been made of atmospheric N2O, O3, and CH4 between 1170 and 1200/cm, using both a single-frequency swept IF channel and a 64-channel RF spectral line receiver with a total IF coverage of 1600 MHz.

High-performance noncontact thermal diode via asymmetric nanostructures

NASA Astrophysics Data System (ADS)

Shen, Jiadong; Liu, Xianglei; He, Huan; Wu, Weitao; Liu, Baoan

2018-05-01

Electric diodes, though laying the foundation of modern electronics and information processing industries, suffer from ineffectiveness and even failure at high temperatures. Thermal diodes are promising alternatives to relieve above limitations, but usually possess low rectification ratios, and how to obtain a high-performance thermal rectification effect is still an open question. This paper proposes an efficient contactless thermal diode based on the near-field thermal radiation of asymmetric doped silicon nanostructures. The rectification ratio computed via exact scattering theories is demonstrated to be as high as 10 at a nanoscale gap distance and period, outperforming the counterpart flat-plate diode by more than one order of magnitude. This extraordinary performance mainly lies in the higher forward and lower reverse radiative heat flux within the low frequency band compared with the counterpart flat-plate diode, which is caused by a lower loss and smaller cut-off wavevector of nanostructures for the forward and reversed scheme, respectively. This work opens new routes to realize high performance thermal diodes, and may have wide applications in efficient thermal computing, thermal information processing, and thermal management.

The effect of bleaching gel and (940 nm and 980 nm) diode lasers photoactivation on intrapulpal temperature and teeth whitening efficiency.

PubMed

Al-Karadaghi, Tamara S; Al-Saedi, Asmaa A; Al-Maliky, Mohammed A; Mahmood, Ali S

2016-12-01

This in vitro study aimed to investigate the whitening efficacy of 940 nm and 980 nm diode laser photoactivation in tooth bleaching by analysing pulp chamber temperature, as well as the change in tooth colour. Root canals of thirty extracted human lower premolars were prepared. Laserwhite* 20 bleaching agent containing 38% of hydrogen peroxide was photoactivated with 7 W output power of 940 nm and 980 nm diode lasers for 120 s. Bleaching gel reduced 27-29% of the temperature from reaching the pulp chamber. For shade assessment, only the groups photoactivated using diode lasers showed statistically significant differences from control group P < 0.001. Within the studied parameters, both 940 nm and 980 nm diode lasers produced a safe pulp temperature increase. Diode laser photoactivation of bleaching gel resulted in more efficient teeth whitening. Photoactivation with 940 nm diode laser yielded the highest change in colour with only minor increase in pulp chamber temperature. © 2016 Australian Society of Endodontology Inc.

Gate-Tunable WSe2/SnSe2 Backward Diode with Ultrahigh-Reverse Rectification Ratio.

PubMed

Murali, Krishna; Dandu, Medha; Das, Sarthak; Majumdar, Kausik

2018-02-14

Backward diodes conduct more efficiently in the reverse bias than in the forward bias, providing superior high-frequency response, temperature stability, radiation hardness, and 1/f noise performance than a conventional diode conducting in the forward direction. Here, we demonstrate a van der Waals material-based backward diode by exploiting the giant staggered band offsets of WSe 2 /SnSe 2 vertical heterojunction. The diode exhibits an ultrahigh-reverse rectification ratio (R) of ∼2.1 × 10 4 , and the same is maintained up to an unusually large bias of 1.5 V-outperforming existing backward diode reports using conventional bulk semiconductors as well as one- and two-dimensional materials by more than an order of magnitude while maintaining an impressive curvature coefficient (γ) of ∼37 V -1 . The transport mechanism in the diode is shown to be efficiently tunable by external gate and drain bias, as well as by the thickness of the WSe 2 layer and the type of metal contacts used. These results pave the way for practical electronic circuit applications using two-dimensional materials and their heterojunctions.

Semi-transparent all-oxide ultraviolet light-emitting diodes based on ZnO/NiO-core/shell nanowires

NASA Astrophysics Data System (ADS)

Shi, Zhi-Feng; Xu, Ting-Ting; Wu, Di; Zhang, Yuan-Tao; Zhang, Bao-Lin; Tian, Yong-Tao; Li, Xin-Jian; Du, Guo-Tong

2016-05-01

Semi-transparent all-oxide light-emitting diodes based on ZnO/NiO-core/shell nanowire structures were prepared on double-polished c-Al2O3 substrates. The entire heterojunction diode showed an average transparency of ~65% in the ultraviolet and visible regions. Under forward bias, the diode displayed an intense ultraviolet emission at ~382 nm, and its electroluminescence performance was remarkable in terms of a low emission onset, acceptable operating stability, and the ability to optically excite emissive semiconductor nanoparticle chromophores.Semi-transparent all-oxide light-emitting diodes based on ZnO/NiO-core/shell nanowire structures were prepared on double-polished c-Al2O3 substrates. The entire heterojunction diode showed an average transparency of ~65% in the ultraviolet and visible regions. Under forward bias, the diode displayed an intense ultraviolet emission at ~382 nm, and its electroluminescence performance was remarkable in terms of a low emission onset, acceptable operating stability, and the ability to optically excite emissive semiconductor nanoparticle chromophores. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr07236k

Efficient and bright organic light-emitting diodes on single-layer graphene electrodes

NASA Astrophysics Data System (ADS)

Li, Ning; Oida, Satoshi; Tulevski, George S.; Han, Shu-Jen; Hannon, James B.; Sadana, Devendra K.; Chen, Tze-Chiang

2013-08-01

Organic light-emitting diodes are emerging as leading technologies for both high quality display and lighting. However, the transparent conductive electrode used in the current organic light-emitting diode technologies increases the overall cost and has limited bendability for future flexible applications. Here we use single-layer graphene as an alternative flexible transparent conductor, yielding white organic light-emitting diodes with brightness and efficiency sufficient for general lighting. The performance improvement is attributed to the device structure, which allows direct hole injection from the single-layer graphene anode into the light-emitting layers, reducing carrier trapping induced efficiency roll-off. By employing a light out-coupling structure, phosphorescent green organic light-emitting diodes exhibit external quantum efficiency >60%, while phosphorescent white organic light-emitting diodes exhibit external quantum efficiency >45% at 10,000 cd m-2 with colour rendering index of 85. The power efficiency of white organic light-emitting diodes reaches 80 lm W-1 at 3,000 cd m-2, comparable to the most efficient lighting technologies.

Promoting Robust Design of Diode Lasers for Space: A National Initiative

NASA Technical Reports Server (NTRS)

Tratt, David M.; Amzajerdian, Farzin; Kashem, Nasir B.; Shapiro, Andrew A.; Mense, Allan T.

2007-01-01

The Diode-laser Array Working Group (DAWG) is a national-level consumer/provider forum for discussion of engineering and manufacturing issues which influence the reliability and survivability of high-power broad-area laser diode devices in space, with an emphasis on laser diode arrays (LDAs) for optical pumping of solid-state laser media. The goals of the group are to formulate and validate standardized test and qualification protocols, operational control recommendations, and consensus manufacturing and certification standards. The group is using reliability and lifetime data collected by laser diode manufacturers and the user community to develop a set of standardized guidelines for specifying and qualifying laser diodes for long-duration operation in space, the ultimate goal being to promote an informed U.S. Government investment and procurement strategy for assuring the availability and durability of space-qualified LDAs. The group is also working to establish effective implementation of statistical design techniques at the supplier design, development, and manufacturing levels to help reduce product performance variability and improve product reliability for diodes employed in space applications

Fabrication of p-Si/n-ZnO:Al heterojunction diode and determination of electrical parameters

NASA Astrophysics Data System (ADS)

Ilican, Saliha; Gorgun, Kamuran; Aksoy, Seval; Caglar, Yasemin; Caglar, Mujdat

2018-03-01

We present a fundamental experimental study of a microwave assisted chemical bath deposition (MW-CBD) method for Al doped ZnO films. Field emission scanning electron microscopy (FESEM) and X-ray diffraction (XRD) spectroscopy were used to analyze the microstructures and crystalline structures of these films, respectively. The p-Si/n-ZnO:Al heterojunction diodes were fabricated. The current-voltage (I-V) characteristics of these diodes were measured at room temperature. The important electrical parameters such as series resistance, the ideality factor and the barrier height were determined by performing plots from the forward bias I-V characteristics using different methods. The obtained results indicate that Al doping improve the electrical properties of the p-Si/n-ZnO diode. The best rectification properties were observed in the p-Si/n-ZnO:5%Al heterojunction diode, so only capacitance-voltage (C-V) measurements of this diode were taken. Electrical parameter values such as series resistance, the built-in potential and the acceptor concentration calculated for this heterojunction diode.

High Power High Efficiency Diode Laser Stack for Processing

NASA Astrophysics Data System (ADS)

Gu, Yuanyuan; Lu, Hui; Fu, Yueming; Cui, Yan

2018-03-01

High-power diode lasers based on GaAs semiconductor bars are well established as reliable and highly efficient laser sources. As diode laser is simple in structure, small size, longer life expectancy with the advantages of low prices, it is widely used in the industry processing, such as heat treating, welding, hardening, cladding and so on. Respectively, diode laser could make it possible to establish the practical application because of rectangular beam patterns which are suitable to make fine bead with less power. At this power level, it can have many important applications, such as surgery, welding of polymers, soldering, coatings and surface treatment of metals. But there are some applications, which require much higher power and brightness, e.g. hardening, key hole welding, cutting and metal welding. In addition, High power diode lasers in the military field also have important applications. So all developed countries have attached great importance to high-power diode laser system and its applications. This is mainly due their low performance. In this paper we will introduce the structure and the principle of the high power diode stack.

Development of a Modern Cosmic Ray Telescope based on Silicon Photomultipliers for use in High Schools

NASA Astrophysics Data System (ADS)

Ruiz Castruita, Daniel; Niduaza, Rommel; Hernandez, Victor; Knox, Adrian; Ramos, Daniel; Fan, Sewan; Fatuzzo, Laura

2015-04-01

Lately, a new light sensor technology based on the breakdown phenomenon in the reverse biased silicon diode has found many applications that span from particle physics to medical imaging science. The silicon photomultiplier (SiPM) has several notable advantages compared to conventional photomultiplier tubes which include: lower cost, lower operating voltage and the ability to measure very weak light signals at the single photon level. At this conference meeting, we describe our efforts to implement SiPMs as read out light detectors for plastic scintillators in a cosmic ray telescope for use in high schools. In particular, we describe our work in designing, testing and assembling the cosmic ray telescope. We include a high gain preamplifier, a custom coincidence circuit using fast comparators to discriminate the SiPM signal amplitudes and a monovibrator IC for lengthening the singles and coincidence logic pulses. An Arduino micro-controller and program sketches are used for processing and storing the singles and coincidence counts data. Results from our measurements would be illustrated and presented. US Department of Education Title V Grant Award PO31S090007.

High data rate optical transceiver terminal

NASA Technical Reports Server (NTRS)

Clarke, E. S.

1973-01-01

The objectives of this study were: (1) to design a 400 Mbps optical transceiver terminal to operate from a high-altitude balloon-borne platform in order to permit the quantitative evaluation of a space-qualifiable optical communications system design, (2) to design an atmospheric propagation experiment to operate in conjunction with the terminal to measure the degrading effects of the atmosphere on the links, and (3) to design typical optical communications experiments for space-borne laboratories in the 1980-1990 time frame. As a result of the study, a transceiver package has been configured for demonstration flights during late 1974. The transceiver contains a 400 Mbps transmitter, a 400 Mbps receiver, and acquisition and tracking receivers. The transmitter is a Nd:YAG, 200 Mhz, mode-locked, CW, diode-pumped laser operating at 1.06 um requiring 50 mW for 6 db margin. It will be designed to implement Pulse Quaternary Modulation (PQM). The 400 Mbps receiver utilizes a Dynamic Crossed-Field Photomultiplier (DCFP) detector. The acquisition receiver is a Quadrant Photomultiplier Tube (QPMT) and receives a 400 Mbps signal chopped at 0.1 Mhz.

Direct-detection Free-space Laser Transceiver Test-bed

NASA Technical Reports Server (NTRS)

Krainak, Michael A.; Chen, Jeffrey R.; Dabney, Philip W.; Ferrara, Jeffrey F.; Fong, Wai H.; Martino, Anthony J.; McGarry Jan. F.; Merkowitz, Stephen M.; Principe, Caleb M.; Sun, Siaoli;

Design of a light delivery system for the photodynamic treatment of the Crohn's disease

NASA Astrophysics Data System (ADS)

Gabrecht, Tanja; Borle, Francois; van den Bergh, Hubert; Michetti, Pierre; Ortner, Maria-Anna; Wagnières, Georges

2007-07-01

Crohn's disease is an inflammatory bowel disease originating from an overwhelming response of the mucosal immune system. Low dose photodynamic therapy (PDT) may modify the mucosal immune response and thus serve as a therapy for Crohn's disease. Most patients with Crohn's disease show inflammatory reactions in the terminal ileum or colon where PDT treatment is feasible by low-invasive endoscopic techniques. However, the tube like geometry of the colon, it's folding, and the presences of multiple foci of Crohn's lesions along the colon require the development of adequate light delivery techniques. We present a prototype light delivery system for endoscopic clinical PDT in patients with Crohn's disease. The system is based on a cylindrical light diffuser inserted into a diffusing balloon catheter. Homogenous irradiation is performed with a 4 W diode laser at 635 nm. Light dosimetry is performed using a calibrated integrating sphere. The system can be used with conventional colonoscopes and colonovideoscopes having a 3.8 mm diameter working channel. The feasibility of PDT in colon with our prototype was demonstrated in first clinical trials.

Factors influencing the temporal growth rate of the high order TM{sub 0n} modes in the Ka-band overmoded Cherenkov oscillator

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu, Dapeng, E-mail: vipbenjamin@163.com; Shu, Ting; Ju, Jinchuan

2015-06-15

When the wavelength of overmoded Cherenkov oscillator goes into Ka-band, power handling capacity becomes an essential issue. Using the TM{sub 02} mode or higher order TM{sub 0n} modes as the operating mode is a potential solution. This paper is aimed to find some proper parameters to make the temporal growth rate of the TM{sub 02} mode higher in our previously studied Gigawatt (GW)-class Ka band oscillator. An accurate and fast calculation method of the “hot” dispersion equation is derived for rectangular corrugated SWSs, which are widely used in the high frequency Cherenkov devices. Then, factors that affect the temporal growthmore » rate of the high order TM{sub 0n} modes are analyzed, including the depth of corrugation, the radius of drift tube, and the diode voltage. Results show that, when parameters are chosen properly, the temporal growth rate of the TM{sub 02} mode can be as high as 0.3 ns{sup −1}.« less

Intense ion beam diagnostics for ICF

NASA Astrophysics Data System (ADS)

Yasuike, K.; Cuneo, M. E.; Wenger, D. F.; Bailey, J. E.; Hanson, D. L.; Mehlhorn, T. A.; Imasaki, K.; Nakai, S.; Mima, K.

1998-11-01

Development of diagnostic methods for high intensity ion beams for ICF is crucial for understanding the ion diode physics. At Osaka University, an arrayed pinhole camera (APC) diagnostic method had been developed to measure the proton beams with an energy of 1 MeV and a J_i. of 100 A/cm^2. on Reiden-SHVS. The APC measures spatial distributions of the beam divergence in r and θ drection and the intensity distribution. An ion image detector capable to acquire a whole temporal evolution within a shot is necessary to measure the higher intensity beams. A fast scintillator with photo-multiplier tubes has been chosen as the image detector. The detector is being tested on a single pinhole camera using a Lithium beam with a particle energy of 5 MeV, a J_i. of 0.5-1 kA/cm^2. and duration of 50 ns, which are very close to the parameters required from ICF, on the SABRE at Sandia National Labs. We will present the diagnostic design and preliminary experiments from SABRE and also present the experimental results from Reiden-SHVS.

Oxytetracycline analysis in honey using a specific portable analyzer

NASA Astrophysics Data System (ADS)

Chen, Guoying; Schwartz, Daniel; Braden, S.; Nunez, Alberto

2007-09-01

Oxytetracycline (OTC) residue in honey is detected using a portable analyzer designed to specifically target tetracycline (TC) drugs based on europium-sensitized luminescence (ESL). A 385 nm light emitting diode (LED) is used as the excitation source and a photomultiplier tube as the light detector. OTC is extracted from honey and cleaned up by solid phase extraction (SPE) using Strata X-WC weak cation exchange cartridges. To the eluate Eu(III) is added to form a Eu-TC chelate at pH 8.5. Efficient intrachelate energy transfer allows sensitive OTC detection at λ ex=385 nm and λ em=610 nm. After a 25-µs time delay, the ESL signal is integrated over a 25-1000 µs interval. The signal intensity reveals a linear relationship (R2=0.972) to OTC concentrations in the 10-200 ng/g range. The limit-of-detection is 6.7 ng/g with an average 5.8% relative standard deviation. The background signal corresponds to ~10 ppb. This instrumentation and method combination enables field analysis that is especially useful for beekeeping industry.

Real-Time, Non-Intrusive Detection of Liquid Nitrogen in Liquid Oxygen at High Pressure and High Flow

NASA Technical Reports Server (NTRS)

Singh, Jagdish P.; Yueh, Fang-Yu; Kalluru, Rajamohan R.; Harrison, Louie

2012-01-01

An integrated fiber-optic Raman sensor has been designed for real-time, nonintrusive detection of liquid nitrogen in liquid oxygen (LOX) at high pressures and high flow rates in order to monitor the quality of LOX used during rocket engine ground testing. The integrated sensor employs a high-power (3-W) Melles Griot diode-pumped, solid-state (DPSS), frequency-doubled Nd:YAG 532- nm laser; a modified Raman probe that has built-in Raman signal filter optics; two high-resolution spectrometers; and photomultiplier tubes (PMTs) with selected bandpass filters to collect both N2 and O2 Raman signals. The PMT detection units are interfaced with National Instruments Lab- VIEW for fast data acquisition. Studies of sensor performance with different detection systems (i.e., spectrometer and PMT) were carried out. The concentration ratio of N2 and O2 can be inferred by comparing the intensities of the N2 and O2 Raman signals. The final system was fabricated to measure N2 and O2 gas mixtures as well as mixtures of liquid N2 and LOX

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ingargiola, A.; Laurence, T. A.; Boutelle, R.

We introduce Photon-HDF5, an open and efficient file format to simplify exchange and long term accessibility of data from single-molecule fluorescence experiments based on photon-counting detectors such as single-photon avalanche diode (SPAD), photomultiplier tube (PMT) or arrays of such detectors. The format is based on HDF5, a widely used platform- and language-independent hierarchical file format for which user-friendly viewers are available. Photon-HDF5 can store raw photon data (timestamp, channel number, etc) from any acquisition hardware, but also setup and sample description, information on provenance, authorship and other metadata, and is flexible enough to include any kind of custom data. Themore » format specifications are hosted on a public website, which is open to contributions by the biophysics community. As an initial resource, the website provides code examples to read Photon-HDF5 files in several programming languages and a reference python library (phconvert), to create new Photon-HDF5 files and convert several existing file formats into Photon-HDF5. As a result, to encourage adoption by the academic and commercial communities, all software is released under the MIT open source license.« less

Fluorescence lifetime imaging microscopy using near-infrared contrast agents.

PubMed

Nothdurft, R; Sarder, P; Bloch, S; Culver, J; Achilefu, S

2012-08-01

Although single-photon fluorescence lifetime imaging microscopy (FLIM) is widely used to image molecular processes using a wide range of excitation wavelengths, the captured emission of this technique is confined to the visible spectrum. Here, we explore the feasibility of utilizing near-infrared (NIR) fluorescent molecular probes with emission >700 nm for FLIM of live cells. The confocal microscope is equipped with a 785 nm laser diode, a red-enhanced photomultiplier tube, and a time-correlated single photon counting card. We demonstrate that our system reports the lifetime distributions of NIR fluorescent dyes, cypate and DTTCI, in cells. In cells labelled separately or jointly with these dyes, NIR FLIM successfully distinguishes their lifetimes, providing a method to sort different cell populations. In addition, lifetime distributions of cells co-incubated with these dyes allow estimate of the dyes' relative concentrations in complex cellular microenvironments. With the heightened interest in fluorescence lifetime-based small animal imaging using NIR fluorophores, this technique further serves as a bridge between in vitro spectroscopic characterization of new fluorophore lifetimes and in vivo tissue imaging. © 2012 The Author Journal of Microscopy © 2012 Royal Microscopical Society.

Assessment of OLED displays for vision research.

PubMed

Cooper, Emily A; Jiang, Haomiao; Vildavski, Vladimir; Farrell, Joyce E; Norcia, Anthony M

2013-10-23

Vision researchers rely on visual display technology for the presentation of stimuli to human and nonhuman observers. Verifying that the desired and displayed visual patterns match along dimensions such as luminance, spectrum, and spatial and temporal frequency is an essential part of developing controlled experiments. With cathode-ray tubes (CRTs) becoming virtually unavailable on the commercial market, it is useful to determine the characteristics of newly available displays based on organic light emitting diode (OLED) panels to determine how well they may serve to produce visual stimuli. This report describes a series of measurements summarizing the properties of images displayed on two commercially available OLED displays: the Sony Trimaster EL BVM-F250 and PVM-2541. The results show that the OLED displays have large contrast ratios, wide color gamuts, and precise, well-behaved temporal responses. Correct adjustment of the settings on both models produced luminance nonlinearities that were well predicted by a power function ("gamma correction"). Both displays have adjustable pixel independence and can be set to have little to no spatial pixel interactions. OLED displays appear to be a suitable, or even preferable, option for many vision research applications.

Fluorescence Lifetime Imaging Microscopy Using Near-Infrared Contrast Agents

PubMed Central

Nothdurft, Ralph; Sarder, Pinaki; Bloch, Sharon; Culver, Joseph; Achilefu, Samuel

2013-01-01

Although single-photon fluorescence lifetime imaging microscopy (FLIM) is widely used to image molecular processes using a wide range of excitation wavelengths, the captured emission of this technique is confined to the visible spectrum. Here, we explore the feasibility of utilizing near-infrared (NIR) fluorescent molecular probes with emission >700 nm for FLIM of live cells. The confocal microscope is equipped with a 785 nm laser diode, a red-enhanced photomultiplier tube, and a time-correlated single photon counting card. We demonstrate that our system reports the lifetime distributions of NIR fluorescent dyes, cypate and DTTCI, in cells. In cells labeled separately or jointly with these dyes, NIR FLIM successfully distinguishes their lifetimes, providing a method to sort different cell populations. In addition, lifetime distributions of cells co-incubated with these dyes allow estimate of the dyes’ relative concentrations in complex cellular microenvironments. With the heightened interest in fluorescence lifetime-based small animal imaging using NIR fluorophores, this technique further serves as a bridge between in vitro spectroscopic characterization of new fluorophore lifetimes and in vivo tissue imaging. PMID:22788550

JAN transistor and diode characterization test program, JANTX diode 1N5619

NASA Technical Reports Server (NTRS)

Takeda, H.

1977-01-01

A statistical summary of electrical characterization was performed on JANTX 1N5619 silicon diodes. Parameters are presented with test conditions, mean, standard deviation, lowest reading, 10% point, 90% point, and highest reading.

Destructive Single-Event Failures in Schottky Diodes

NASA Technical Reports Server (NTRS)

Casey, Megan C.; Lauenstein, Jean-Marie; Gigliuto, Robert A.; Wilcox, Edward P.; Phan, Anthony M.; Kim, Hak; Chen, Dakai; LaBel, Kenneth A.

2014-01-01

This presentation contains test results for destructive failures in DC-DC converters. We have shown that Schottky diodes are susceptible to destructive single-event effects. Future work will be completed to identify parameter that determines diode susceptibility.

Reliability of High Power Laser Diode Arrays Operating in Long Pulse Mode

NASA Technical Reports Server (NTRS)

Amzajerdian, Farzin; Meadows, Byron L.; Barnes, Bruce W.; Lockard, George E.; Singh, Upendra N.; Kavaya, Michael J.; Baker, Nathaniel R.

2006-01-01

Reliability and lifetime of quasi-CW laser diode arrays are greatly influenced by their thermal characteristics. This paper examines the thermal properties of laser diode arrays operating in long pulse duration regime.

Mounting for diodes provides efficient heat sink

NASA Technical Reports Server (NTRS)

1964-01-01

Efficient heat sink is provided by soldering diodes to metal support bars which are brazed to a ceramic base. Electrical connections between diodes on adjacent bars are made flexible by metal strips which aid in heat dissipation.

Development and fabrication of improved Schottky power diodes, phases I and II

NASA Technical Reports Server (NTRS)

Cordes, L. F.; Garfinkle, M.; Taft, E. A.

1974-01-01

Reproducible methods for the fabrication of silicon Schottky diodes were developed for the metals tungsten, aluminum, conventional platinum silicide and low temperature platinum silicide. Barrier heights and barrier lowering were measured permitting the accurate prediction of ideal forward and reverse diode performance. Processing procedures were developed which permit the fabrication of large area (approximately 1 sqcm) mesa-geometry power Schottky diodes with forward and reverse characteristics that approach theoretical values.

Electronic safing of a diode laser arm-fire device

NASA Astrophysics Data System (ADS)

Willis, Kenneth E.; Chang, Suk T.

1993-06-01

The paper describes a rocket motor arm-fire device which uses a diode laser protected from unintentional function with a specially designed RF frequency attenuating coupler (RFAC). The RFAC transfers power into a Faraday cage via magnetic flux, thereby protecting the diode, its drive circuit, and the pyrotechnic from all electromagnetic and electrostatic hazards. Diagrams of the diode laser arm-fire device are presented together with a diagram illustrating the RFAC principle of operation.

NUCLEAR REACTOR AND THERMIONIC FUEL ELEMENT THEREFOR

DOEpatents

Rasor, N.S.; Hirsch, R.L.

1963-12-01

The patent relates to the direct conversion of fission heat to electricity by use of thermionic plasma diodes having fissionable material cathodes, said diodes arranged to form a critical mass in a nuclear reactor. The patent describes a fuel element comprising a plurality of diodes each having a fissionable material cathode, an anode around said cathode, and an ionizable gas therebetween. Provision is made for flowing the gas and current serially through the diodes. (AEC)

WDM Nanoscale Laser Diodes for Si Photonic Interconnects

DTIC Science & Technology

2016-07-25

mounting on silicon. The nanoscale VCSELs can achieve small optical modes and present a compact laser diode that is also robust. In this work we have used...Distribution Unlimited UU UU UU UU 25-07-2016 1-Feb-2012 31-Dec-2015 Final Report: WDM Nanoscale Laser Diodes for Si Photonic Interconnects The views...P.O. Box 12211 Research Triangle Park, NC 27709-2211 VCSEL, optical interconnect, laser diode , semiconductor laser, microcavity REPORT DOCUMENTATION

Laterally injected light-emitting diode and laser diode

DOEpatents

Miller, Mary A.; Crawford, Mary H.; Allerman, Andrew A.

2015-06-16

A p-type superlattice is used to laterally inject holes into an III-nitride multiple quantum well active layer, enabling efficient light extraction from the active area. Laterally-injected light-emitting diodes and laser diodes can enable brighter, more efficient devices that impact a wide range of wavelengths and applications. For UV wavelengths, applications include fluorescence-based biological sensing, epoxy curing, and water purification. For visible devices, applications include solid state lighting and projection systems.

Super-Lattice Light Emitting Diodes (SLEDS) on GaAs

DTIC Science & Technology

2016-03-31

Super-Lattice Light Emitting Diodes (SLEDS) on GaAs Kassem Nabha1, Russel Ricker2, Rodney McGee1, Nick Waite1, John Prineas2, Sydney Provence2...infrared light emitting diodes (LEDs). Typically, the LED arrays are mated with CMOS read-in integrated circuit (RIIC) chips using flip-chip bonding. In...circuit (RIIC) chips using flip-chip bonding. This established technology is called Hybrid-super-lattice light emitting diodes (Hybrid- SLEDS). In

Investigations of large area electron beam diodes for excimer lasers. Final report

DOE Office of Scientific and Technical Information (OSTI.GOV)

Not Available

1993-12-31

This report summarizes the results of a one year research program at the University of Michigan to investigate the physics and technology of microsecond electron beam diodes. These experiments were performed on the Michigan Electron Long Beam Accelerator (MELBA) at parameters: Voltage {equals} {minus}0.65 to {minus}0.9 MV, current {equals} 1 {minus}50 kA, and pulselength {equals} 0.5 {minus} 5 microseconds. Major accomplishments include: (1) the first two-wavelength (CO2 and HeNe) laser deflection measurements of diode plasma and neutrals; (2) measurements of the effects on magnetic field gradient on microsecond diode closure; (3) demonstration of good fidelity of processed x-ray signals asmore » a diagnostic of beam voltage; (4) extended-pulselength scaling of electron beam diode arcing and diode closure; and (5) innovative Cerenkov plate diagnostics of e-beam dynamics.« less

Environmental testing of a diode-laser-pumped Nd:YAG laser and a set of diode-laser-arrays

NASA Technical Reports Server (NTRS)

Hemmati, H.; Lesh, J. R.

1989-01-01

Results of the environmental test of a compact, rigid and lightweight diode-laser-pumped Nd:YAG laser module are discussed. All optical elements are bonded onto the module using space applicable epoxy, and two 200 mW diode laser arrays for pump sources are used to achieve 126 mW of CW output with about 7 percent electrical-to-optical conversion efficiency. This laser assembly and a set of 20 semiconductor diode laser arrays were environmentally tested by being subjected to vibrational and thermal conditions similar to those experienced during launch of the Space Shuttle, and both performed well. Nevertheless, some damage to the laser front facet in diode lasers was observed. Significant degradation was observed only on lasers which performed poorly in the life test. Improvements in the reliability of the Nd:YAG laser are suggested.

Narrowband diode laser pump module for pumping alkali vapors.

PubMed

Rotondaro, M D; Zhdanov, B V; Shaffer, M K; Knize, R J

2018-04-16

We describe a method of line narrowing and frequency-locking a diode laser stack to an alkali atomic line for use as a pump module for Diode Pumped Alkali Lasers. The pump module consists of a 600 W antireflection coated diode laser stack configured to lase using an external cavity. The line narrowing and frequency locking is accomplished by introducing a narrowband polarization filter based on magneto-optical Faraday effect into the external cavity, which selectively transmits only the frequencies that are in resonance with the 6 2 S 1/2 → 6 2 P 3/2 transition of Cs atoms. The resulting pump module has demonstrated that a diode laser stack, which lases with a line width of 3 THz without narrowbanding, can be narrowed to 10 GHz. The line narrowed pump module produced 518 Watts that is 80% of the power generated by the original broadband diode laser stack.

Stacked, Filtered Multi-Channel X-Ray Diode Array

DOE Office of Scientific and Technical Information (OSTI.GOV)

MacNeil, Lawrence P.; Dutra, Eric C.; Raphaelian, Mark

2015-08-01

This system meets the need for a low-cost, robust X-ray diode array to use for experiments in hostile environments on multiple platforms, and for experiments utilizing forces that may destroy the diode(s). Since these uses require a small size with a minimal single line-of-sight, a parallel array often cannot be used. So a stacked, filtered multi-channel X-ray diode array was developed that was called the MiniXRD. The design was modeled, built, and tested at National Security Technologies, LLC (NSTec) Livermore Operations (LO) to determine fundamental characteristics. Then, several different systems were fielded as ancillary “ridealong” diagnostics at several national facilitiesmore » to allow us to iteratively improve the design and usability. Presented here are design considerations and experimental results. This filtered diode array is currently at Technical Readiness Level (TRL) 6.« less

Cr-Si Schottky nano-diodes utilizing anodic aluminum oxide templates.

PubMed

Kwon, Namyong; Kim, Kyohyeok; Heo, Jinhee; Chung, Ilsub

2014-04-01

We have fabricated Cr nanodot Schottky diodes utilizing AAO templates formed on n-Si substrates. The diameters of the diodes were 75.0, 57.6, and 35.8 nm. Cr nanodot Schottky diodes with smaller diameters yield higher current densities than those with larger diameters due to an enhanced tunnel current contribution, which is attributed to a reduction in the barrier thickness. The diameters of Cr nanodots smaller than the Debye length (156 nm) play an important role in the reduction of barrier thickness. Also, we have fabricated Cr-Si nanorod Schottky diodes with three different lengths (130, 220, and 330 nm) by dry etching of n-Si substrate. Cr-Si nanorod Schottky diodes with longer nanorods yield higher reverse current than those with shorter nanorods due to the enhanced electric field, which is attributed to a high aspect ratio of Si nanorod.

Giant spin-torque diode sensitivity in the absence of bias magnetic field.

PubMed

Fang, Bin; Carpentieri, Mario; Hao, Xiaojie; Jiang, Hongwen; Katine, Jordan A; Krivorotov, Ilya N; Ocker, Berthold; Langer, Juergen; Wang, Kang L; Zhang, Baoshun; Azzerboni, Bruno; Amiri, Pedram Khalili; Finocchio, Giovanni; Zeng, Zhongming

2016-04-07

Microwave detectors based on the spin-torque diode effect are among the key emerging spintronic devices. By utilizing the spin of electrons in addition to charge, they have the potential to overcome the theoretical performance limits of their semiconductor (Schottky) counterparts. However, so far, practical implementations of spin-diode microwave detectors have been limited by the necessity to apply a magnetic field. Here, we demonstrate nanoscale magnetic tunnel junction microwave detectors, exhibiting high-detection sensitivity of 75,400 mV mW(-1) at room temperature without any external bias fields, and for low-input power (micro-Watts or lower). This sensitivity is significantly larger than both state-of-the-art Schottky diode detectors and existing spintronic diodes. Micromagnetic simulations and measurements reveal the essential role of injection locking to achieve this sensitivity performance. This mechanism may provide a pathway to enable further performance improvement of spin-torque diode microwave detectors.

Giant spin-torque diode sensitivity in the absence of bias magnetic field

PubMed Central

Fang, Bin; Carpentieri, Mario; Hao, Xiaojie; Jiang, Hongwen; Katine, Jordan A.; Krivorotov, Ilya N.; Ocker, Berthold; Langer, Juergen; Wang, Kang L.; Zhang, Baoshun; Azzerboni, Bruno; Amiri, Pedram Khalili; Finocchio, Giovanni; Zeng, Zhongming

2016-01-01

Microwave detectors based on the spin-torque diode effect are among the key emerging spintronic devices. By utilizing the spin of electrons in addition to charge, they have the potential to overcome the theoretical performance limits of their semiconductor (Schottky) counterparts. However, so far, practical implementations of spin-diode microwave detectors have been limited by the necessity to apply a magnetic field. Here, we demonstrate nanoscale magnetic tunnel junction microwave detectors, exhibiting high-detection sensitivity of 75,400 mV mW−1 at room temperature without any external bias fields, and for low-input power (micro-Watts or lower). This sensitivity is significantly larger than both state-of-the-art Schottky diode detectors and existing spintronic diodes. Micromagnetic simulations and measurements reveal the essential role of injection locking to achieve this sensitivity performance. This mechanism may provide a pathway to enable further performance improvement of spin-torque diode microwave detectors. PMID:27052973

Spin-torque diode frequency tuning via soft exchange pinning of both magnetic layers

NASA Astrophysics Data System (ADS)

Khudorozhkov, A. A.; Skirdkov, P. N.; Zvezdin, K. A.; Vetoshko, P. M.; Popkov, A. F.

2017-12-01

A spin-torque diode, which is a magnetic tunnel junction with magnetic layers softly pinned at some tilt to each other, is proposed. The resonance operating frequency of such a dual exchange-pinned spin-torque diode can be significantly higher (up to 9.5 GHz) than that of a traditional free layer spin-torque diode, and, at the same time, the sensitivity remains rather high. Using micromagnetic modeling we show that the maximum microwave sensitivity of the considered diode is reached at the bias current densities slightly below the self-sustained oscillations initiating. The dependence of the resonance frequency and the sensitivity on the angle between pinning exchange fields is presented. Thus, a way of designing spin-torque diode with a given resonance response frequency in the microwave region in the absence of an external magnetic field is proposed.

Characterization of zero-bias microwave diode power detectors at cryogenic temperature.

PubMed

Giordano, Vincent; Fluhr, Christophe; Dubois, Benoît; Rubiola, Enrico

2016-08-01

We present the characterization of commercial tunnel diode low-level microwave power detectors at room and cryogenic temperatures. The sensitivity as well as the output voltage noise of the tunnel diodes is measured as functions of the applied microwave power. We highlight strong variations of the diode characteristics when the applied microwave power is higher than a few microwatts. For a diode operating at 4 K, the differential gain increases from 1000 V/W to about 4500 V/W when the power passes from -30 dBm to -20 dBm. The diode white noise floor is equivalent to a Noise Equivalent Power of 0.8 pW/Hz and 8 pW/Hz at 4 K and 300 K, respectively. Its flicker noise is equivalent to a relative amplitude noise power spectral density Sα(1 Hz) = - 120 dB/Hz at 4 K. Flicker noise is 10 dB higher at room temperature.

Performance Evaluation of III-V Hetero/Homojunction Esaki Tunnel Diodes on Si and Lattice Matched Substrates

NASA Astrophysics Data System (ADS)

Thomas, Paul M.

Understanding of quantum tunneling phenomenon in semiconductor systems is increasingly important as CMOS replacement technologies are investigated. This work studies a variety of heterojunction materials and types to increase tunnel currents to CMOS competitive levels and to understand how integration onto Si substrates affects performance. Esaki tunnel diodes were grown by Molecular Beam Epitaxy (MBE) on Si substrates via a graded buffer and control Esaki tunnel diodes grown on lattice matched substrates for this work. Peak current density for each diode is extracted and benchmarked to build an empirical data set for predicting diode performance. Additionally, statistics are used as tool to show peak to valley ratio for the III-V on Si sample and the control perform similarly below a threshold area. This work has applications beyond logic, as multijunction solar cell, heterojunction bipolar transistor, and light emitting diode designs all benefit from better tunnel contact design.

Direct diode lasers and their advantages for materials processing and other applications

NASA Astrophysics Data System (ADS)

Fritsche, Haro; Ferrario, Fabio; Koch, Ralf; Kruschke, Bastian; Pahl, Ulrich; Pflueger, Silke; Grohe, Andreas; Gries, Wolfgang; Eibl, Florian; Kohl, Stefanie; Dobler, Michael

2015-03-01

The brightness of diode lasers is improving continuously and has recently started to approach the level of some solid state lasers. The main technology drivers over the last decade were improvements of the diode laser output power and divergence, enhanced optical stacking techniques and system design, and most recently dense spectral combining. Power densities at the work piece exceed 1 MW/cm2 with commercially available industrial focus optics. These power densities are sufficient for cutting and welding as well as ablation. Single emitter based diode laser systems further offer the advantage of fast current modulation due their lower drive current compared to diode bars. Direct diode lasers may not be able to compete with other technologies as fiber or CO2-lasers in terms of maximum power or beam quality. But diode lasers offer a range of features that are not possible to implement in a classical laser. We present an overview of those features that will make the direct diode laser a very valuable addition in the near future, especially for the materials processing market. As the brightness of diode lasers is constantly improving, BPP of less than 5mm*mrad have been reported with multikW output power. Especially single emitter-based diode lasers further offer the advantage of very fast current modulation due to their low drive current and therefore low drive voltage. State of the art diode drivers are already demonstrated with pulse durations of <10μs and repetition rates can be adjusted continuously from several kHz up to cw mode while addressing power levels from 0-100%. By combining trigger signals with analog modulations nearly any kind of pulse form can be realized. Diode lasers also offer a wide, adaptable range of wavelengths, and wavelength stabilization. We report a line width of less than 0.1nm while the wavelength stability is in the range of MHz which is comparable to solid state lasers. In terms of applications, especially our (broad) wavelength combining technology for power scaling opens the window to new processes of cutting or welding and process control. Fast power modulation through direct current control allows pulses of several microseconds with hundreds of watts average power. Spot sizes of less than 100 μm are obtained at the work piece. Such a diode system allows materials processing with a pulse parameter range that is hardly addressed by any other laser system. High productivity material ablation with cost effective lasers is enabled. The wide variety of wavelengths, high brightness, fast power modulation and high efficiency of diode lasers results in a strong pull of existing markets, but also spurs the development of a wide variety of new applications.

Overview of optical rectennas for solar energy harvesting

NASA Astrophysics Data System (ADS)

Zhu, Zixu; Joshi, Saumil; Pelz, Bradley; Moddel, Garret

2013-09-01

Although the concept of using optical rectenna for harvesting solar energy was first introduced four decades ago, only recently has it invited a surge of interest, with dozens of laboratories around the world working on various aspects of the technology. An optical rectenna couples an ultra-high-speed diode to a submicron antenna so that the incoming radiation received by the antenna is rectified by the diode to produce a DC power output. The result is a technology that can be efficient and inexpensive, requiring only low-cost materials. Conventional classical rectification theory does not apply at optical frequencies, necessitating the application of quantum photon-assisted tunneling theory to describe the device operation. At first glance it would appear that the ultimate conversion efficiency is limited only by the Landsberg limit of 93%, but a more sober analysis that includes limitation due to the coherence of solar radiation leads to a result that coincides with the Trivich-Flinn limit of 44%. Innovative antenna designs are required to achieve high efficiency at frequencies where resistive losses in metal are substantial. The diode most often considered for rectennas make use of electron tunneling through ultra-thin insulators in metal-insulator-metal (MIM) diodes. The most severe constraint is that the impedances of the antenna and diodes must match for efficient power transfer. The consequence is an RC time constant that cannot be achieved with parallel-plate MIM diodes, leading to the need for real innovations in diode structures. Technologies under consideration include sharp-tip and traveling-wave MIM diodes, and graphene geometric diodes. We survey the technologies under consideration.

[Characterization of a diode system for in vivo dosimetry with electron beams].

PubMed

Ragona, R; Rossetti, V; Lucio, F; Anglesio, S; Giglioli, F R

2001-10-01

Current quality assurance regulation stresses the basic role of in vivo dosimetry. Our study evaluates the usefulness and reliability of semiconductor diodes in determining the electron absorbed dose. P-type EDE semiconductor detectors were irradiated with electron beams of different energies produced by a CGR Saturn Therac 20. The diode and ionization chamber response were compared, and effect of energy value, collimator opening, source skin distance and gantry angle on diode response was studied. Measurements show a maximum increment of about 20% in diode response increasing the beam energy (6-20 MeV). The response also increases with: collimator opening, reaching 5% with field sizes larger than 10x10 cm2 (with the exception of 20 MeV energy); SSD increase (with a maximum of 8% for 20 MeV); transversal gantry incidence, compared with the diode longitudinal axis; it does not affect the response in the interval of +/- 45 degrees. Absorbed dose attenuation at dmax, due to the presence of diode on the axis of the beam as a function of electron energy was also determined : the maximum attenuation value is 15% in 6 MeV electron beams. A dose calculation algorithm, taking into account diode response dependence was outlined. In vivo dosimetry was performed in 92 fields for 80 patients, with an agreement of +/-4 % (1 SD) between prescribed and measured dose. It is possible to use the EDE semiconductor detectors on a quality control program of dose delivery for electron beam therapy, but particular attention should be paid to the beam incidence angle and diode dose attenuation.

Progress on single barrier varactors for submillimeter wave power generation

NASA Technical Reports Server (NTRS)

Nilsen, Svein M.; Groenqvist, Hans; Hjelmgren, Hans; Rydberg, Anders; Kollberg, Erik L.

1992-01-01

Theoretical work on Single Barrier Varactor (SBV) diodes, indicate that the efficiency for a multiplier has a maximum for a considerably smaller capacitance variation than previously thought. The theoretical calculations are performed, both with a simple theoretical model and a complete computer simulation using the method of harmonic balance. Modeling of the SBV is carried out in two steps. First, the semiconductor transport equations are solved simultaneously using a finite difference scheme in one dimension. Secondly, the calculated I-V, and C-V characteristics are input to a multiplier simulator which calculates the optimum impedances, and output powers at the frequencies of interest. Multiple barrier varactors can also be modeled in this way. Several examples on how to design the semiconductor layers to obtain certain characteristics are given. The calculated conversion efficiencies of the modeled structures, in a multiplier circuit, are also presented. Computer simulations for a case study of a 750 GHz multiplier show that InAs diodes perform favorably compared to GaAs diodes. InAs and InGaAs SBV diodes have been fabricated and their current vs. voltage characteristics are presented. In the InAs diode, was the large bandgap semiconductor AlSb used as barrier. The InGaAs diode was grown lattice matched to an InP substrate with InAlAs as a barrier material. The current density is greatly reduced for these two material combinations, compared to that of GaAs/AlGaAs SBV diodes. GaAs based diodes can be biased to higher voltages than InAs diodes.

Compact 2100 nm laser diode module for next-generation DIRCM

NASA Astrophysics Data System (ADS)

Dvinelis, Edgaras; Greibus, Mindaugas; TrinkÅ«nas, Augustinas; NaujokaitÄ--, Greta; Vizbaras, Augustinas; Vizbaras, Dominykas; Vizbaras, Kristijonas

2017-10-01

Compact high-power 2100 nm laser diode module for next-generation directional infrared countermeasure (DIRCM) systems is presented. Next-generation DIRCM systems require compact, light-weight and robust laser modules which could provide intense IR light emission capable of disrupting the tracking sensor of heat-seeking missile. Currently used solid-state and fiber laser solutions for mid-IR band are bulky and heavy making them difficult to implement in smaller form-factor DIRCM systems. Recent development of GaSb laser diode technology greatly improved optical output powers and efficiencies of laser diodes working in 1900 - 2450 nm band [1] while also maintaining very attractive size, weight, power consumption and cost characteristics. 2100 nm laser diode module presented in this work performance is based on high-efficiency broad emitting area GaSb laser diode technology. Each laser diode emitter is able to provide 1 W of CW output optical power with working point efficiency up to 20% at temperature of 20 °C. For output beam collimation custom designed fast-axis collimator and slow-axis collimator lenses were used. These lenses were actively aligned and attached using UV epoxy curing. Total 2 emitters stacked vertically were used in 2100 nm laser diode module. Final optical output power of the module goes up to 2 W at temperature of 20 °C. Total dimensions of the laser diode module are 35 x 25 x 16 mm (L x W x H) with a weight of 28 grams. Finally output beam is bore-sighted to mechanical axes of the module housing allowing for easy integration into next-generation DIRCM systems.

Integrated RGB laser light module for autostereoscopic outdoor displays

NASA Astrophysics Data System (ADS)

Reitterer, Jörg; Fidler, Franz; Hambeck, Christian; Saint Julien-Wallsee, Ferdinand; Najda, Stephen; Perlin, Piotr; Stanczyk, Szymon; Czernecki, Robert; McDougall, Stewart D.; Meredith, Wyn; Vickers, Garrie; Landles, Kennedy; Schmid, Ulrich

2015-02-01

We have developed highly compact RGB laser light modules to be used as light sources in multi-view autostereoscopic outdoor displays and projection devices. Each light module consists of an AlGaInP red laser diode, a GaInN blue laser diode, a GaInN green laser diode, as well as a common cylindrical microlens. The plano-convex microlens is a so-called "fast axis collimator", which is widely used for collimating light beams emitted from high-power laser diode bars, and has been optimized for polychromatic RGB laser diodes. The three light beams emitted from the red, green, and blue laser diodes are collimated in only one transverse direction, the so-called "fast axis", and in the orthogonal direction, the so-called "slow axis", the beams pass the microlens uncollimated. In the far field of the integrated RGB light module this produces Gaussian beams with a large ellipticity which are required, e.g., for the application in autostereoscopic outdoor displays. For this application only very low optical output powers of a few milliwatts per laser diode are required and therefore we have developed tailored low-power laser diode chips with short cavity lengths of 250 μm for red and 300 μm for blue. Our RGB laser light module including the three laser diode chips, associated monitor photodiodes, the common microlens, as well as the hermetically sealed package has a total volume of only 0.45 cm³, which to our knowledge is the smallest RGB laser light source to date.

Silicon diodes as an alternative to diamond detectors for depth dose curves and profile measurements of photon and electron radiation.

PubMed

Scherf, Christian; Peter, Christiane; Moog, Jussi; Licher, Jörg; Kara, Eugen; Zink, Klemens; Rödel, Claus; Ramm, Ulla

2009-08-01

Depth dose curves and lateral dose profiles should correspond to relative dose to water in any measured point, what can be more or less satisfied with different detectors. Diamond as detector material has similar dosimetric properties like water. Silicon diodes and ionization chambers are also commonly used to acquire dose profiles. The authors compared dose profiles measured in an MP3 water phantom with a diamond detector 60003, unshielded and shielded silicon diodes 60008 and 60012 and a 0.125-cm(3) thimble chamber 233642 (PTW, Freiburg, Germany) for 6- and 25-MV photons. Electron beams of 6, 12 and 18 MeV were investigated with the diamond detector, the unshielded diode and a Markus chamber 23343. The unshielded diode revealed relative dose differences at the water surface below +10% for 6-MV and +4% for 25-MV photons compared to the diamond data. These values decreased to less than 1% within the first millimeters of water depth. The shielded diode was only required to obtain correct data of the fall-off zones for photon beams larger than 10 x 10 cm(2) because of important contributions of low-energy scattered photons. For electron radiation the largest relative dose difference of -2% was observed with the unshielded silicon diode for 6 MeV within the build-up zone. Spatial resolutions were always best with the small voluminous silicon diodes. Relative dose profiles obtained with the two silicon diodes have the same degree of accuracy as with the diamond detector.

Stacked, filtered multi-channel X-ray diode array

DOE Office of Scientific and Technical Information (OSTI.GOV)

MacNeil, Lawrence; Dutra, Eric; Raphaelian, Mark

2015-08-01

There are many types of X-ray diodes used for X-ray flux or spectroscopic measurements and for estimating the spectral shape of the VUV to soft X-ray spectrum. However, a need exists for a low-cost, robust X-ray diode to use for experiments in hostile environments on multiple platforms, and for experiments that utilize forces that may destroy the diode(s). Since the typical proposed use required a small size with a minimal single line-of-sight, a parallel array could not be used. So, a stacked, filtered multi-channel X-ray diode array was developed, called the MiniXRD. To achieve significant cost savings while maintaining robustnessmore » and ease of field setup, repair, and replacement, we designed the system to be modular. The filters were manufactured in-house and cover the range from 450 eV to 5000 eV. To achieve the line-of-sight accuracy needed, we developed mounts and laser alignment techniques. We modeled and tested elements of the diode design at NSTec Livermore Operations (NSTec / LO) to determine temporal response and dynamic range, leading to diode shape and circuitry changes to optimize impedance and charge storage. The authors fielded individual and stacked systems at several national facilities as ancillary "ride-along" diagnostics to test and improve the design usability. This paper presents the MiniXRD system performance, which supports consideration as a viable low-costalternative for multiple-channel low-energy X-ray measurements. This diode array is currently at Technical Readiness Level (TRL) 6.« less

What monitor can replace the cathode-ray tube for visual stimulation to elicit multifocal electroretinograms?

PubMed

Matsumoto, Celso Soiti; Shinoda, Kei; Matsumoto, Harue; Seki, Keisuke; Nagasaka, Eiichiro; Iwata, Takeshi; Mizota, Atsushi

2014-08-05

To compare a conventional cathode-ray tube (CRT) screen to organic light-emitting diode (OLED) and liquid crystal display (LCD) screens as visual stimulators to elicit multifocal electroretinograms (mfERGs), mfERGs were recorded from seven eyes of seven healthy volunteers (21 ± 2 years). The mfERGs elicited by a conventional CRT screen (S710, Compaq Computer Co.) were compared to those elicited by a studio-grade master OLED monitor (PVM-1741, Sony, Japan) and a conventional LCD (S1721, Flexscan, Eizo Nanao Corp., Japan). The luminance changes of each monitor were measured with a photodiode. CRT, OLED, and LCD screens with a frame frequency of 60 Hz were studied. A hexagonal stimulus array with 61 stimulus elements was created on each monitor. The serial white stimuli of the OLED screen at 60 Hz did not fuse, and that of the LCD screens fused. The amplitudes of P1 and P2 of the first-order kernels of the mfERGs were not significantly different from those elicited by the CRT and OLED screens, and the P1 amplitude of the first-order kernel elicited by the LCD stimuli was significantly smaller than that elicited by the CRT in all the groups of the averaged hexagonal elements. The implicit times were approximately 10 ms longer in almost all components elicited by the LCD screen compared to those elicited by the CRT screen. The mfERGs elicited by monitors other than the CRT should be carefully interpreted, especially those elicited by LCD screens. The OLED had good performance, and we conclude that it can replace the CRT as a stimulator for mfERGs; however, a collection of normative data is recommended. © 2014 ARVO.

Online analysis of five organic ultraviolet filters in environmental water samples using magnetism-enhanced monolith-based in-tube solid phase microextraction coupled with high-performance liquid chromatography.

PubMed

Mei, Meng; Huang, Xiaojia

2017-11-24

Due to the endocrine disrupting properties, organic UV filters have been a great risk for humans and other organisms. Therefore, development of accurate and effective analytical methods is needed for the determination of UV filters in environmental waters. In this work, a fast, sensitive and environmentally friendly method combining magnetism-enhanced monolith-based in-tube solid phase microextraction with high-performance liquid chromatography with diode array detection (DAD) (ME-MB-IT/SPME-HPLC-DAD) for the online analysis of five organic UV filters in environmental water samples was developed. To extract UV filters effectively, an ionic liquid-based monolithic capillary column doped with magnetic nanoparticles was prepared by in-situ polymerization and used as extraction medium of online ME-MB-IT/SPME-HPLC-DAD system. Several extraction conditions including the intensity of magnetic field, sampling and desorption flow rate, volume of sample and desorption solvent, pH value and ionic strength of sample matrix were optimized thoroughly. Under the optimized conditions, the extraction efficiencies for five organic UV filters were in the range of 44.0-100%. The limits of detection (S/N=3) and limits of quantification (S/N=10) were 0.04-0.26μg/L and 0.12-0.87μg/L, respectively. The precisions indicated by relative standard deviations (RSDs) were less than 10% for both intra- and inter-day variabilities. Finally, the developed method was successfully applied to the determination of UV filters in three environmental water samples and satisfactory results were obtained. Copyright © 2017 Elsevier B.V. All rights reserved.

Home-made online hyphenation of pressurized liquid extraction, turbulent flow chromatography, and high performance liquid chromatography, Cistanche deserticola as a case study.

PubMed

Song, Qingqing; Li, Jun; Liu, Xiao; Zhang, Yuan; Guo, Liping; Jiang, Yong; Song, Yuelin; Tu, Pengfei

2016-03-18

Incompatibility between the conventional pressurized liquid extraction (PLE) devices and high performance liquid chromatography (HPLC) extensively hinders direct and green chemical analysis of herbal materials. Herein, a facile PLE module was configured, and then it was online hyphenated with HPLC via a turbulent flow chromatography (TFC) column. Regarding PLE module, a long PEEK tube (0.13 × 1000 mm) was employed to generate desired pressure (approximately 13.0 MPa) when warm acidic water (70 °C) was delivered as extraction solvent at a high flow rate (2.5 mL/min), and a hollow guard column (3.0 × 4.0 mm) was implemented to hold crude materials. Effluent was collected from the outlet of PEEK tube, concentrated, and subjected onto HPLC coupled with hybrid ion trap-time of flight mass spectrometer to assess the extraction efficiency and also to profile the chemical composition of Cistanche deserticola (CD) that is honored as "Ginseng of the desert". Afterwards, a TFC column was introduced to accomplish online transmission of low molecule weight components from PLE module to HPLC coupled with diode array detection, and two electronic 6-port/2-channel valves were in charge of alternating the whole system between extraction (0-3.0 min) and elution (3.0-35.0 min) phases. Quantitative method was developed and validated for simultaneous determination of eight primary phenylethanoid glycosides in CD using online PLE-TFC-HPLC. All findings demonstrated that the home-made platform is advantageous at direct chemical analysis, as well as time-, solvent-, and material-savings, suggesting a robust tool for chemical fingerprinting of herbs. Copyright © 2016 Elsevier B.V. All rights reserved.

Ion-pair in-tube solid-phase microextraction and capillary liquid chromatography using a titania-based column: application to the specific lauralkonium chloride determination in water.

PubMed

Prieto-Blanco, M C; Moliner-Martínez, Y; López-Mahía, P; Campíns-Falcó, P

2012-07-27

A quick, miniaturized and on-line method has been developed for the determination in water of the predominant homologue of benzalkonium chloride, dodecyl dimethyl benzyl ammonium chloride or lauralkonium chloride (C(12)-BAK). The method is based on the formation of an ion-pair in both in-tube solid-phase microextraction (IT-SPME) and capillary liquid chromatography. The IT-SPME optimization required the study of the length and nature of the stationary phase of capillary and the processed sample volume. Because to the surfactant character of the analyte both, the extracting and replacing solvents, have played a decisive role in the IT-SPME optimized procedure. Conditioning the capillary with the mobile phase which contains the counter ion (acetate), using an organic additive (tetrabutylammonium chloride) added to the sample and a mixture water/methanol as replacing solvent (processed just before the valve is switched to the inject position), allowed to obtain good precision of the retention time and a narrow peak for C(12)-BAK. A reversed-phase capillary based TiO(2) column and a mobile phase containing ammonium acetate at pH 5.0 for controlling the interactions of cationic surfactant with titania surface were proposed. The optimized procedure provided adequate linearity, accuracy and precision at the concentrations interval of 1.5-300 μg L(-1) .The limit of detection (LOD) was 0.5 μg L(-1) using diode array detection (DAD). The applicability of proposed IT-SPME-capillary LC method has been assessed in several water samples. Copyright © 2012 Elsevier B.V. All rights reserved.

Diode step stress program, JANTX1N5614

NASA Technical Reports Server (NTRS)

1978-01-01

The reliability of switching diode JANTX1N5614 was tested. The effect of power/temperature step stress on the diode was determined. Control sample units were maintained for verification of the electrical parametric testing. Results are reported.

Coherent addition of high power broad-area laser diodes with a compact VBG V-shaped external Talbot cavity

DOE PAGES

Liu, Bo; Braiman, Yehuda

2018-02-06

In this paper, we introduced a compact V-shaped external Talbot cavity for phase locking of high power broad-area laser diodes. The length of compact cavity is ~25 mm. Near diffraction-limit coherent addition of 10 broad-area laser diodes indicated that high quality phase locking was achieved. We measured the near-field emission mode of each individual broad-area laser diode with different feedback, such as a volume Bragg grating and a high reflection mirror. Finally, we found out that the best result of phase locking broad-area laser diodes was achieved by the compact V-shaped external Talbot cavity with volume Bragg grating feedback.

Effect of temperature on series resistance of organic/inorganic semiconductor junction diode

NASA Astrophysics Data System (ADS)

Tripathi, Udbhav; Kaur, Ramneek; Bharti, Shivani

2016-05-01

The paper reports the fabrication and characterization of CuPc/n-Si organic/inorganic semiconductor diode. Copper phthalocyanine, a p-type organic semiconductor layer has been deposited on Si substrate by thermal evaporation technique. The detailed analysis of the forward and reverse bias current-voltage characteristics has been provided. Temperature dependence of the schottky diode parameters has been studied and discussed in the temperature range, 303 K to 353 K. Series resistance of the diode has been determined using Cheung's function method. Series resistance decreases with increase in temperature. The large value of series resistance at low temperature has been explained on the basis of barrier inhomogeneities in the diode.

Coherent addition of high power broad-area laser diodes with a compact VBG V-shaped external Talbot cavity

NASA Astrophysics Data System (ADS)

Liu, Bo; Braiman, Yehuda

2018-05-01

We introduced a compact V-shaped external Talbot cavity for phase locking of high power broad-area laser diodes. The length of compact cavity is ∼25 mm. Near diffraction-limit coherent addition of 10 broad-area laser diodes indicated that high quality phase locking was achieved. We measured the near-field emission mode of each individual broad-area laser diode with different feedback, such as a volume Bragg grating and a high reflection mirror. We found out that the best result of phase locking broad-area laser diodes was achieved by the compact V-shaped external Talbot cavity with volume Bragg grating feedback.

Iodine-stabilized single-frequency green InGaN diode laser.

PubMed

Chen, Yi-Hsi; Lin, Wei-Chen; Shy, Jow-Tsong; Chui, Hsiang-Chen

2018-01-01

A 520-nm InGaN diode laser can emit a milliwatt-level, single-frequency laser beam when the applied current slightly exceeds the lasing threshold. The laser frequency was less sensitive to diode temperature and could be finely tuned by adjusting the applied current. Laser frequency was stabilized onto a hyperfine component in an iodine transition through the saturated absorption spectroscopy. The uncertainty of frequency stabilization was approximately 8×10 -9 at a 10-s integration time. This compact laser system can replace the conventional green diode-pumped solid-state laser and applied as a frequency reference. A single longitudinal mode operational region with diode temperature, current, and output power was investigated.

Research and Development of Laser Diode Based Instruments for Applications in Space

NASA Technical Reports Server (NTRS)

Krainak, Michael; Abshire, James; Cornwell, Donald; Dragic, Peter; Duerksen, Gary; Switzer, Gregg

1999-01-01

Laser diode technology continues to advance at a very rapid rate due to commercial applications such as telecommunications and data storage. The advantages of laser diodes include, wide diversity of wavelengths, high efficiency, small size and weight and high reliability. Semiconductor and fiber optical-amplifiers permit efficient, high power master oscillator power amplifier (MOPA) transmitter systems. Laser diode systems which incorporate monolithic or discrete (fiber optic) gratings permit single frequency operation. We describe experimental and theoretical results of laser diode based instruments currently under development at NASA Goddard Space Flight Center including miniature lidars for measuring clouds and aerosols, water vapor and wind for Earth and planetary (Mars Lander) use.

High brightness laser-diode device emitting 160 watts from a 100 μm/NA 0.22 fiber.

PubMed

Yu, Junhong; Guo, Linui; Wu, Hualing; Wang, Zhao; Tan, Hao; Gao, Songxin; Wu, Deyong; Zhang, Kai

2015-11-10

A practical method of achieving a high-brightness and high-power fiber-coupled laser-diode device is demonstrated both by experiment and ZEMAX software simulation, which is obtained by a beam transformation system, free-space beam combining, and polarization beam combining based on a mini-bar laser-diode chip. Using this method, fiber-coupled laser-diode module output power from the multimode fiber with 100 μm core diameter and 0.22 numerical aperture (NA) could reach 174 W, with equalizing brightness of 14.2  MW/(cm2·sr). By this method, much wider applications of fiber-coupled laser-diodes are anticipated.

Achievement of high diode sensitivity via spin torque-induced resonant expulsion in vortex magnetic tunnel junction

NASA Astrophysics Data System (ADS)

Tsunegi, Sumito; Taniguchi, Tomohiro; Yakushiji, Kay; Fukushima, Akio; Yuasa, Shinji; Kubota, Hitoshi

2018-05-01

We investigated the spin-torque diode effect in a magnetic tunnel junction with FeB free layer. Vortex-core expulsion was observed near the boundary between vortex and uniform states. A high diode voltage of 24 mV was obtained with alternative input power of 0.3 µW, corresponding to huge diode sensitivity of 80,000 mV/mW. In the expulsion region, a broad peak in the high frequency region was observed, which is attributed to the weak excitation of uniform magnetization by thermal noise. The high diode sensitivity is of great importance for device applications such as telecommunications, radar detectors, and high-speed magnetic-field sensors.

Effect of the fabrication conditions of SiGe LEDs on their luminescence and electrical properties

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kalyadin, A. E.; Sobolev, N. A., E-mail: nick@sobolev.ioffe.rssi.ru; Strel’chuk, A. M.

2016-02-15

SiGe-based n{sup +}–p–p{sup +} light-emitting diodes (LEDs) with heavily doped layers fabricated by the diffusion (of boron and phosphorus) and CVD (chemical-vapor deposition of polycrystalline silicon layers doped with boron and phosphorus) techniques are studied. The electroluminescence spectra of both kinds of LEDs are identical, but the emission intensity of CVD diodes is ∼20 times lower. The reverse and forward currents in the CVD diodes are substantially higher than those in diffusion-grown diodes. The poorer luminescence and electrical properties of the CVD diodes are due to the formation of defects at the interface between the emitter and base layers.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Scott, Jeffrey Wayne; Pratt, Richard M

A modulated backscatter radio frequency identification device includes a diode detector configured to selectively modulate a reply signal onto an incoming continuous wave; communications circuitry configured to provide a modulation control signal to the diode detector, the diode detector being configured to modulate the reply signal in response to be modulation control signal; and circuitry configured to increase impedance change at the diode detector which would otherwise not occur because the diode detector rectifies the incoming continuous wave while modulating the reply signal, whereby reducing the rectified signal increases modulation depth by removing the reverse bias effects on impedance changes.more » Methods of improving depth of modulation in a modulated backscatter radio frequency identification device are also provided.« less

Ultra-high brightness wavelength-stabilized kW-class fiber coupled diode laser

NASA Astrophysics Data System (ADS)

Huang, Robin K.; Chann, Bien; Glenn, John D.

2011-03-01

TeraDiode has produced a fiber-coupled direct diode laser with a power level of 1,040 W from a 200 μm core diameter, 0.18 numerical aperture (NA) output fiber at a single center wavelength. This was achieved with a novel beam combining and shaping technique using COTS diode lasers. The fiber-coupled output corresponds to a Beam Parameter Product (BPP) of 18 mm-mrad and is the lowest BPP kW-class direct diode laser yet reported. The laser has been used to demonstrate laser cutting and welding of steel sheet metal up to 6.65 mm thick. Further advances of these ultra-bright lasers are also projected.

Shot-noise in resistive-diode mixers and the attenuator noise model

NASA Technical Reports Server (NTRS)

Kerr, A. R.

1979-01-01

The representation of a pumped exponential diode, operating as a mixer, by an equivalent lossy network, is reexamined. It is shown that the model is correct provided the network has ports for all sideband frequencies at which (real) power flow can occur between the diode and its embedding. The temperature of the equivalent network is eta/2 times the physical temperature of the diode. The model is valid only if the series resistance and nonlinear capacitance of the diode are negligible. Expressions are derived for the input and output noise temperature and the noise-temperature ratio of ideal mixers. Some common beliefs concerning noise-figure and noise-temperature ratio are shown to be incorrect.

Coherent addition of high power broad-area laser diodes with a compact VBG V-shaped external Talbot cavity

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Bo; Braiman, Yehuda

In this paper, we introduced a compact V-shaped external Talbot cavity for phase locking of high power broad-area laser diodes. The length of compact cavity is ~25 mm. Near diffraction-limit coherent addition of 10 broad-area laser diodes indicated that high quality phase locking was achieved. We measured the near-field emission mode of each individual broad-area laser diode with different feedback, such as a volume Bragg grating and a high reflection mirror. Finally, we found out that the best result of phase locking broad-area laser diodes was achieved by the compact V-shaped external Talbot cavity with volume Bragg grating feedback.

The 13.9 GHz short pulse radar noise figure measurements utilizing silicon and gallium-arsenide mixer diodes

NASA Technical Reports Server (NTRS)

Dombrowski, M.

1977-01-01

An analysis was made on two commercially available silicon and gallium arsenide Schottky barrier diodes. These diodes were selected because of their particularly low noise figure in the frequency range of interest. The specified noise figure for the silicon and gallium arsenide diodes were 6.3 db and 5.3 db respectively when functioning as mixers in the 13.6 GHz region with optimum local oscillator drive.

Thermal (Silicon Diode) Data Acquisition System

NASA Technical Reports Server (NTRS)

Kegley, Jeffrey

2008-01-01

Marshall Space Flight Center's X-ray Calibration Facility (XRCF) has been performing cryogenic testing to 20 Kelvin since 1999. Two configurations for acquiring data from silicon diode temperature sensors have been implemented at the facility. The facility's environment is recorded via a data acquisition system capable of reading up to 60 silicon diodes. Test article temperature is recorded by a second data acquisition system capable of reading 150+ silicon diodes. The specifications and architecture of both systems will be presented.

Surface plasmon dispersion analysis in the metal-oxide-metal tunnel diode

NASA Technical Reports Server (NTRS)

Donohue, J. F.; Wang, E. Y.

1987-01-01

A detailed model of surface plasmon dispersion in the metal-oxide-metal tunnel diode is presented in order to clarify the spectral emission from this diode. The model predicts the location of the spectral peaks and the emission between the peaks by considering the effects of retardation on the surface plasmon. A nonradiative mode is found to play a major role in the transition from the visible to UV peaks in the diode spectra.

Thermal (Silicon Diode) Data Acquisition Systems

NASA Technical Reports Server (NTRS)

Wright, Ernest; Kegley, Jeff

2008-01-01

Marshall Space Flight Center s X-ray Cryogenic Facility (XRCF) has been performing cryogenic testing to 20 Kelvin since 1999. Two configurations for acquiring data from silicon diode temperature sensors have been implemented at the facility. The facility's environment is recorded via a data acquisition system capable of reading up to 60 silicon diodes. Test article temperature is recorded by a second data acquisition system capable of reading 150+ silicon diodes. The specifications and architecture of both systems will be presented.

Qualification of Laser Diode Arrays for Mercury Laser Altimeter

NASA Technical Reports Server (NTRS)

Stephen, Mark; Vasilyev, Aleksey; Schafer, John; Allan, Graham R.

2004-01-01

NASA's requirements for high reliability, high performance satellite laser instruments have driven the investigation of many critical components; specifically, 808 nm laser diode array (LDA) pump devices. Performance of Quasi-CW, High-power, laser diode arrays under extended use is presented. We report the optical power over several hundred million pulse operation and the effect of power cycling and temperature cycling of the laser diode arrays. Data on the initial characterization of the devices is also presented.

Method and system for powering and cooling semiconductor lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Telford, Steven J; Ladran, Anthony S

A semiconductor laser system includes a diode laser tile. The diode laser tile includes a mounting fixture having a first side and a second side opposing the first side and an array of semiconductor laser pumps coupled to the first side of the mounting fixture. The semiconductor laser system also includes an electrical pulse generator thermally coupled to the diode bar and a cooling member thermally coupled to the diode bar and the electrical pulse generator.

Diode Laser Measurements of Concentration and Temperature in Microgravity Combustion

NASA Technical Reports Server (NTRS)

Silver, Joel A.; Kane, Daniel J.

1999-01-01

Diode laser absorption spectroscopy provides a direct method of determinating species concentration and local gas temperature in combustion flames. Under microgravity conditions, diode lasers are particularly suitable, given their compact size, low mass and low power requirements. The development of diode laser-based sensors for gas detection in microgravity is presented, detailing measurements of molecular oxygen. Current progress of this work and future application possibilities for these methods on the International Space Station are discussed.

Microscale solid-state thermal diodes enabling ambient temperature thermal circuits for energy applications.

PubMed

Wang, Song; Cottrill, Anton L; Kunai, Yuichiro; Toland, Aubrey R; Liu, Pingwei; Wang, Wen-Jun; Strano, Michael S

2017-05-24

Thermal diodes, or devices that transport thermal energy asymmetrically, analogous to electrical diodes, hold promise for thermal energy harvesting and conservation, as well as for phononics or information processing. The junction of a phase change material and phase invariant material can form a thermal diode; however, there are limited constituent materials available for a given target temperature, particularly near ambient. In this work, we demonstrate that a micro and nanoporous polystyrene foam can house a paraffin-based phase change material, fused to PMMA, to produce mechanically robust, solid-state thermal diodes capable of ambient operation with Young's moduli larger than 11.5 MPa and 55.2 MPa above and below the melting transition point, respectively. Moreover, the composites show significant changes in thermal conductivity above and below the melting point of the constituent paraffin and rectification that is well-described by our previous theory and the Maxwell-Eucken model. Maximum thermal rectifications range from 1.18 to 1.34. We show that such devices perform reliably enough to operate in thermal diode bridges, dynamic thermal circuits capable of transforming oscillating temperature inputs into single polarity temperature differences - analogous to an electrical diode bridge with widespread implications for transient thermal energy harvesting and conservation. Overall, our approach yields mechanically robust, solid-state thermal diodes capable of engineering design from a mathematical model of phase change and thermal transport, with implications for energy harvesting.

Back-streaming ion beam measurements in a Self Magnetic Insulated (SMP) electron diode

NASA Astrophysics Data System (ADS)

Mazarakis, Michael; Johnston, Mark; Kiefer, Mark; Leckbee, Josh; Webb, Timothy; Bennett, Nichelle; Droemer, Darryl; Welch, Dale; Nielsen, Dan; Ziska, Derek; Wilkins, Frank; Advance radiography department Team

2014-10-01

A self-magnetic pinch diode (SMP) is presently the electron diode of choice for high energy flash x-ray radiography utilizing pulsed power drivers. The Sandia National Laboratories RITS accelerator is presently fit with an SMP diode that generates very small electron beam spots. RITS is a Self-Magnetically Insulated Transmission Line (MITL) voltage adder that adds the voltage pulse of six 1.3 MV inductively insulated cavities. The diode's anode is made of high Z metal in order to produce copious and energetic flash x-rays for radiographic imaging of high areal density objects. In any high voltage inductive voltage adder (IVA) utilizing MITLs to transmit the power to the diode load, the precise knowledge of the accelerating voltage applied on the anode-cathode (A-K) gap is problematic. This is even more difficult in an SMP diode where the A-K gap is very small (~1 cm) and the diode region very hostile. We are currently measuring the back-streaming ion currents emitted from the anode and propagating through a hollow cathode tip. We then are evaluating the A-K gap voltage by ion time of flight measurements supplemented with filtered Rogowski coils. Sandia is a multiprogram laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Company, for the United States Department of Energy's National Nuclear Security Administration under Contract No. DE- AC04-94AL850.

Fundamental and subharmonic excitation for an oscillator with several tunneling diodes in series

NASA Technical Reports Server (NTRS)

Boric-Lubecke, Olga; Pan, Dee-Son; Itoh, Tatsuo

1995-01-01

Connecting several tunneling diodes in series shows promise as a method for increasing the output power of these devices as millimeter-wave oscillators. However, due to the negative differential resistance (NDR) region in the dc I-V curve of a single tunneling diode, a circuit using several devices connected in series, and biased simultaneously in the NDR region, is dc unstable. Because of this instability, an oscillator with several tunneling diodes in series has a demanding excitation condition. Excitation using an externally applied RF signal is one approach to solving this problem. This is experimentally demonstrated using an RF source, both with frequency close to as well as with frequency considerably lower than the oscillation frequency. Excitation by an RF (radio frequency) source with a frequency as low as one sixth of the oscillation frequency was demonstrated in a proof-of-principle experiment at 2 GHz, for an oscillator with two tunnel diodes connected in series. Strong harmonics of the oscillation signal were generated as a result of the highly nonlinear dc I-V curve of the tunnel diode and a large signal oscillator design. Third harmonic output power comparable to that of the fundamental was observed in one oscillator circuit. If submillimeter wave resonant-tunneling diodes (RTD's) are used instead of tunnel diodes, this harmonic output may be useful for generating signals at frequencies well into the terahertz range.

A randomised controlled trial of coblation, diode laser and cold dissection in paediatric tonsillectomy.

PubMed

Elbadawey, M R; Hegazy, H M; Eltahan, A E; Powell, J

2015-11-01

This study aimed to compare the efficacy of diode laser, coblation and cold dissection tonsillectomy in paediatric patients. A total of 120 patients aged 10-15 years with recurrent tonsillitis were recruited. Participants were prospectively randomised to diode laser, coblation or cold dissection tonsillectomy. Operative time and blood loss were recorded. Pain was recorded on a Wong-Baker FACES(®) pain scale. The operative time (10 ± 0.99 minutes), blood loss (20 ± 0.85 ml) and pain were significantly lower with coblation tonsillectomy than with cold dissection tonsillectomy (20 ± 1.0 minutes and 30 ± 1.0 ml; p = 0.0001) and diode laser tonsillectomy (15 ± 0.83 minutes and 25 ± 0.83 ml; p = 0.0001). Diode laser tonsillectomy had a shorter operative time (p = 0.0001) and less blood loss (p = 0.001) compared with cold dissection tonsillectomy. However, at post-operative day seven, the diode laser tonsillectomy group had significantly higher pain scores compared with the cold dissection (p = 0.042) and coblation (p = 0.04) tonsillectomy groups. Both coblation and diode laser tonsillectomy are associated with significantly reduced blood loss and shorter operative times compared with cold dissection tonsillectomy. However, we advocate coblation tonsillectomy because of the lower post-operative pain scores compared with diode laser and cold dissection tonsillectomy.

Dual-Gated MoTe2/MoS2 van der Waals Heterojunction p-n Diode

NASA Astrophysics Data System (ADS)

Rai, Amritesh; Movva, Hema C. P.; Kang, Sangwoo; Larentis, Stefano; Roy, Anupam; Tutuc, Emanuel; Banerjee, Sanjay K.

2D materials are promising for future electronic and optoelectronic applications. In this regard, it is important to realize p-n diodes, the most fundamental building block of all modern semiconductor devices, based on these 2D materials. While it is challenging to achieve homojunction diodes in 2D semiconductors due to lack of reliable selective doping techniques, it is relatively easier to achieve diode-like behavior in van der Waals (vdW) heterostructures comprising different 2D semiconductors. Here, we demonstrate dual-gated vdW heterojunction p-n diodes based on p-type MoTe2 and n-type MoS2, with hBN as the top and bottom gate dielectric. The heterostructure stack is assembled using a polymer-based `dry-transfer' technique. Pt contact is used for hole injection in MoTe2, whereas Ag is used for electron injection in MoS2. The dual-gates allow for independent electrostatic tuning of the carriers in MoTe2 and MoS2. Room temperature interlayer current-voltage characteristics reveal a strong gate-tunable rectification behavior. At low temperatures, the diode turn-on voltage increases, whereas the reverse saturation current decreases, in accordance with conventional p-n diode behavior. Dual-Gated MoTe2/MoS2 van der Waals Heterojunction p-n Diode.

SU-E-P-34: Dose Perturbation Caused by Sun Nuclear QED Diode When Used for Very Small Electron Fields

DOE Office of Scientific and Technical Information (OSTI.GOV)

Klash, S; Steinman, J; Stanley, T

2015-06-15

Purpose: Diodes are utilized by radiotherapy departments to help verify that treatment fields are being delivered correctly to the patient. Some treatment fields utilize electron beams along with a cerrobend cutout to shape the beam to the area to be treated. Cerrobend cutouts can sometimes be very small < 2×2-cm2. Some published work has addressed diode perturbation for cutout sizes down to 1.5-cm, this work addresses the diode perturbation of the Sun Nuclear QEDTM diode for cutouts as small as 0.5-cm in diameter. Methods: Measurements were taken with an A16 Exradin micro-chamber in Solid Water to 100-cm SSD. Dmax wasmore » determined for each cutout using various amounts of Solid Water in 1–2 mm increments to account for the dmax shifting in small fields. The diode was placed on top of the solid water to 100-cm SSD in the center of the cutout. Measurements were taken with no diode for comparison. The cutouts ranged in diameter from 0.5-cm to 5.0-cm and included the open 6×6 insert. Measurements were made for energies 6, 9, 12, 15,&18 MeV. Results: For 6 MeV, the percent dose reduction from the diode in the cutout field compared to the field without the diode ranged from 35% to 25% as a function of cutout size. For higher energies, this percentage decreased and generally was 25% to 15%. It was observed that dmax shifts significantly upstream for very small cutouts (<2-cm diameter) to less than 1 cm for all energies. Conclusion: The presence of diodes in small electron fields is enough to cause significant dose perturbation to the target volume. It is recommended that diodes for very small electron fields be used sparingly or possibly with a dose correction per treatment fraction(s), if the total projected delivered dose is going to be significantly different from that prescribed by the physician.« less

Experimental study of self magnetic pinch diode as flash radiography source at 4 megavolt

DOE Office of Scientific and Technical Information (OSTI.GOV)

Etchessahar, Bertrand; Bicrel, Béatrice; Cassany, Bruno

2013-10-15

The Self Magnetic Pinch (SMP) diode is a potential high-brightness X-ray source for high voltage generators (2–10 MV) that has shown good reliability for flash radiography applications [D. D. Hinchelwood et al., “High power self-pinch diode experiments for radiographic applications” IEEE Trans. Plasma Sci. 35(3), 565–572 (2007)]. We have studied this diode at about 4 MV, driven by the ASTERIX generator operated at the CEA/GRAMAT [G. Raboisson et al., “ASTERIX, a high intensity X-ray generator,” in Proceedings of the 7th IEEE Pulsed Power Conference (1989), pp. 567–570]. This generator, made up of a capacitor bank and a Blumlein line, wasmore » initially designed to test the behavior of electronic devices under irradiation. In our experiments, the vacuum diode is modified in order to set up flash radiographic diodes. A previous set of radiographic experiments was carried out on ASTERIX with a Negative Polarity Rod Pinch (NPRP) diode [B. Etchessahar et al., “Study and optimization of negative polarity rod pinch diode as flash radiography source at 4.5 MV,” Phys. Plasmas 19(9), 093104 (2012)]. The SMP diode which is examined in the present study provides an alternative operating point on the same generator and a different radiographic performance: 142 ± 11 rad at 1 m dose (Al) for a 3.46 ± 0.42 mm spot size (1.4× FWHM of the LSF). This performance is obtained in a reproducible and robust nominal configuration. However, several parametric variations were also tested, such as cathode diameter and anode/cathode gap. They showed that an even better performance is accessible after optimization, in particular, a smaller spot size (<3 mm). Numbers of electrical, optical, and X-ray diagnostics have been implemented in order to gain more insight in the diode physics and to optimize it further. For the first time in France, visible and laser imaging of the SMP diode has been realized, from a radial point of view, thus, providing key information on the electrode plasmas evolution, responsible for the gap closure.« less

Flexible Cryogenic Temperature and Liquid-Level Probes

NASA Technical Reports Server (NTRS)

Haberbusch, Mark

2005-01-01

Lightweight, flexible probes have been developed for measuring temperatures at multiple locations in tanks that contain possibly pressurized cryogenic fluids. If the fluid in a given tank is subcritical (that is, if it consists of a liquid and its vapor), then in one of two modes of operation, the temperature measurements made by a probe of this type can be used to deduce the approximate level of the liquid. The temperature sensors are silicon diodes located at intervals along a probe. If the probe is to be used to measure a temperature gradient along a given axis in the tank, then the probe must be mounted along that axis. In the temperature-measurement mode, a constant small electric current is applied to each diode and the voltage across the diode a known function of the current and temperature is measured as an indication of its temperature. For the purpose of this measurement, small electric current signifies a current that is not large enough to cause a significant increase in the measured temperature. More specifically, the probe design calls for a current of 10 A, which, in the cryogenic temperature range of interest, generates heat at a rate of only about 0.01 mW per diode. In the liquid-level-sensing mode, one applies a larger current (30 mA) to each diode so as to heat each diode appreciably (with a power of about 36 mW in the temperature range of interest). Because the liquid cools the diode faster than does the vapor, the temperature of the diode is less when the diode is immersed in the liquid than when it is above the surface of the liquid. Thus, the temperature (voltage) reading from each diode can be used to determine whether the liquid level is above or below the diode, and one can deduce that the liquid level lies between two adjacent diodes, the lower one of which reads a significantly lower temperature. The aforementioned techniques for measuring temperature and deducing liquid level are not new. What is new here are the designs of the probes and of associated external electronic circuitry. In each probe, the diodes and the lead wires are embedded in a strong, lightweight, flexible polyimide strip. Each probe is constructed as an integral unit that includes a multipin input/output plug or socket for solderless connection of the lead wires to the external circuitry. The polyimide strip includes mounting tabs with holes that can accommodate rivets, screws, or other fasteners. Alternatively, a probe can be mounted by use of an epoxy. A probe can be manufactured to almost any length or width, and the diodes can be embedded at almost any desired location along and across the polyimide strip. In designing a probe for a specific application, one seeks a compromise between (1) minimizing the number of diodes in order to minimize the complexity of input/output connections and external electronic circuitry while (2) using enough diodes to obtain the required precision. Optionally, to minimize spurious heating of the cryogenic fluid, the external circuitry can be designed to apply power to the probe only during brief measurement intervals. Assuming that the external circuitry is maintained at a steady temperature, a power-on interval of only a few seconds is sufficient to obtain accurate data on temperatures and/or the height of the liquid/vapor interface.

Flexible Cryogenic Temperature and Liquid-Level Probes

NASA Technical Reports Server (NTRS)

Haberbusch, Mark

2003-01-01

Lightweight, flexible probes have been developed for measuring temperatures at multiple locations in tanks that contain possibly pressurized cryogenic fluids. If the fluid in a given tank is subcritical (that is, if it consists of a liquid and its vapor), then in one of two modes of operation, the temperature measurements made by a probe of this type can be used to deduce the approximate level of the liquid. The temperature sensors are silicon diodes located at intervals along a probe. If the probe is to be used to measure a temperature gradient along a given axis in the tank, then the probe must be mounted along that axis. In the non-liquid-level-sensing temperature-measurement mode, a constant small electric current is applied to each diode and the voltage across the diode . a known function of the current and temperature . is measured as an indication of its temperature. For the purpose of this measurement, "small electric current" signifies a current that is not large enough to cause a significant increase in the measured temperature. More specifically, the probe design calls for a current of 10 A, which, in the cryogenic temperature range of interest, generates heat at a rate of only about 0.01 mW per diode. In the liquid-level-sensing mode, one applies a larger current (30 mA) to each diode so as to heat each diode appreciably (with a power of about 36 mW in the temperature range of interest). Because the liquid cools the diode faster than does the vapor, the temperature of the diode is less when diode is immersed in the liquid than when it is above the surface of the liquid. Thus, the temperature (voltage) reading from each diode can be used to determine whether the liquid level is above or below the diode, and one can deduce that the liquid level lies between two adjacent diodes, the lower one of which reads a significantly lower temperature. The aforementioned techniques for measuring temperature and deducing liquid level are not new. What is new here are the designs of the probes and of associated external electronic circuitry. In each probe, the diodes and the lead wires are embedded in a strong, lightweight, flexible polyimide strip. Each probe is constructed as an integral unit that includes a multipin input/output plug or socket for solderless connection of the lead wires to the external circuitry. The polyimide strip includes mounting tabs with holes that can accommodate rivets, screws, or other fasteners. Alternatively, a probe can be mounted by use of an epoxy. A probe can be manufactured to almost any length or width, and the diodes can be embedded at almost any desired locations along and across the polyimide strip. In designing a probe for a specific application, one seeks a compromise between (1) minimizing the number of diodes in order to minimize the complexity of input/output connections and external electronic circuitry while (2) using enough diodes to obtain the required precision. Optionally, to minimize spurious heating of the cryogenic fluid, the external circuitry can be designed to apply power to the probe only during brief measurement intervals. Assuming that the external circuitry is maintained at a steady temperature, a power-on interval of only a few seconds is sufficient to obtain accurate data on temperatures and/or the height of the liquid/vapor interface.

Properties and Frequency Conversion of High-Brightness Diode-Laser Systems

NASA Astrophysics Data System (ADS)

Boller, Klaus-Jochen; Beier, Bernard; Wallenstein, Richard

An overview of recent developments in the field of high-power, high-brightness diode-lasers, and the optically nonlinear conversion of their output into other wavelength ranges, is given. We describe the generation of continuous-wave (CW) laser beams at power levels of several hundreds of milliwatts to several watts with near-perfect spatial and spectral properties using Master-Oscillator Power-Amplifier (MOPA) systems. With single- or double-stage systems, using amplifiers of tapered or rectangular geometry, up to 2.85 W high-brightness radiation is generated at wavelengths around 810nm with AlGaAs diodes. Even higher powers, up to 5.2W of single-frequency and high spatial quality beams at 925nm, are obtained with InGaAs diodes. We describe the basic properties of the oscillators and amplifiers used. A strict proof-of-quality for the diode radiation is provided by direct and efficient nonlinear optical conversion of the diode MOPA output into other wavelength ranges. We review recent experiments with the highest power levels obtained so far by direct frequency doubling of diode radiation. In these experiments, 100mW single-frequency ultraviolet light at 403nm was generated, as well as 1W of single-frequency blue radiation at 465nm. Nonlinear conversion of diode radiation into widely tunable infrared radiation has recently yielded record values. We review the efficient generation of widely tunable single-frequency radiation in the infrared with diode-pumped Optical Parametric Oscillators (OPOs). With this system, single-frequency output radiation with powers of more than 0.5W was generated, widely tunable around wavelengths of 2.1,m and 1.65,m and with excellent spectral and spatial quality. These developments are clear indicators of recent advances in the field of high-brightness diode-MOPA systems, and may emphasize their future central importance for applications within a vast range of optical wavelengths.

Ion Diode Experiments on PBFA-X

NASA Astrophysics Data System (ADS)

Lockner, Thomas

1996-05-01

The PBFA-II pulsed power accelerator at Sandia National Laboratories has been modified to replace the radially focusing ion diode with an extraction ion diode. In the extraction diode mode (PBFA X) the ion beam is generated on the surface of an annular disk and extracted along the cylindrical axis. An additional magnetically insulated transmission line (MITL) has been installed to transmit power from the center to the bottom of the accelerator, where it drives a magnetically insulated extraction ion diode. The modification increases access to the diode and the diagnostics, permitting a higher shot rate, and allows us to study extraction diode technology at a power level near what is required for a high yield facility. The modification also includes reversing the polarity of the top half of the accelerator to permit operation at twice the previous source voltage. In the new configuration the diode could operate at 15 MV and 0.8 MA. This operating point is near the 30 MV, 1.0 MA operating point envisioned for one module of a high yield facility, and will allow the study of intense extraction ion diodes at power levels relevant to such a facility. Experimental results will be presented including MITL coupling studies, beam current density control, discharge cleaning of diode surfaces to reduce the presence of contaminant ions in the source beam, and the effect of anode substrate materials on the purity of the lithium beam. A comparison between predicted and measured radial beam profiles will also be presented, with the predicted profiles obtained from the ATHETA code that solves magnetostatics problems in two dimensions. This work was supported by the US/DOE under contract No. DE-AC04-94AL85000. +In collaboration with R. S. Coats, M. E. Cuneo, M. P. Desjarlias, D. J. Johnson, T. A. Mehlhorn, C. W. Mendel, Jr., P. Menge#, and W. J. Poukey,

Highly reliable high-power AlGaAs/GaAs 808 nm diode laser bars

NASA Astrophysics Data System (ADS)

Hülsewede, R.; Schulze, H.; Sebastian, J.; Schröder, D.; Meusel, J.; Hennig, P.

2007-02-01

There are strong demands at the market to increase power and reliability for 808 nm diode laser bars. Responding to this JENOPTIK Diode Lab GmbH developed high performance 808 nm diode laser bars in the AlGaAs/GaAs material system with special emphasis to high power operation and long term stability. Optimization of the epitaxy structure and improvements in the diode laser bar design results in very high slope efficiency of >1.2 W/A, low threshold current and small beam divergence in slow axis direction. Including low serial resistance the overall wall plug efficiency is up to 65% for our 20%, 30% and 50% filling factor 10 mm diode laser bars. With the JENOPTIK Diode Lab cleaving and coating technique the maximum output power is 205 W in CW operation and 377 W in QCW operation (200 μs, 2% duty cycle) for bars with 50% filling factor. These bars mounted on micro channel cooled package are showing a very high reliability of >15.000 h. Mounted on conductive cooled package high power operation at 100 W is demonstrated for more than 5000h.

Features of current-voltage characteristic of nonequilibrium trench MOS barrier Schottky diode

NASA Astrophysics Data System (ADS)

Mamedov, R. K.; Aslanova, A. R.

2018-06-01

The trench MOS barrier Schottky diodes (TMBS diode) under the influence of the voltage drop of the additional electric field (AEF) appearing in the near-contact region of the semiconductor are in a nonequilibrium state and their closed external circuit flows currents in the absence of an external voltage. When an external voltage is applied to the TMBS diode, the current transmission is described by the thermionic emission theory with a specific feature. Both forward and reverse I-V characteristics of the TMBS diode consist of two parts. In the initial first part of the forward I-V characteristic there are no forward currents, but reverse saturation currents flow, in its subsequent second part the currents increase exponentially with the voltage. In the initial first part of the reverse I-V characteristic, the currents increase in an abrupt way and in the subsequent second part the saturation currents flow under the action of the image force. The mathematical expressions for forward and reverse I-V characteristic of the TMBS diode and also narrow or nanostructure Schottky diode are proposed, which are in good agreement with the results of experimental and calculated I-V characteristics.

Thermal characterization of gallium nitride p-i-n diodes

NASA Astrophysics Data System (ADS)

Dallas, J.; Pavlidis, G.; Chatterjee, B.; Lundh, J. S.; Ji, M.; Kim, J.; Kao, T.; Detchprohm, T.; Dupuis, R. D.; Shen, S.; Graham, S.; Choi, S.

2018-02-01

In this study, various thermal characterization techniques and multi-physics modeling were applied to understand the thermal characteristics of GaN vertical and quasi-vertical power diodes. Optical thermography techniques typically used for lateral GaN device temperature assessment including infrared thermography, thermoreflectance thermal imaging, and Raman thermometry were applied to GaN p-i-n diodes to determine if each technique is capable of providing insight into the thermal characteristics of vertical devices. Of these techniques, thermoreflectance thermal imaging and nanoparticle assisted Raman thermometry proved to yield accurate results and are the preferred methods of thermal characterization of vertical GaN diodes. Along with this, steady state and transient thermoreflectance measurements were performed on vertical and quasi-vertical GaN p-i-n diodes employing GaN and Sapphire substrates, respectively. Electro-thermal modeling was performed to validate measurement results and to demonstrate the effect of current crowding on the thermal response of quasi-vertical diodes. In terms of mitigating the self-heating effect, both the steady state and transient measurements demonstrated the superiority of the tested GaN-on-GaN vertical diode compared to the tested GaN-on-Sapphire quasi-vertical structure.

Free-space and underwater GHz data transmission using AlGaInN laser diode technology

NASA Astrophysics Data System (ADS)

Najda, S. P.; Perlin, P.; Suski, T.; Marona, L.; Boćkowski, M.; Leszczyński, M.; Wisniewski, P.; Czernecki, R.; Kucharski, R.; Targowski, G.; Watson, S.; Kelly, A. E.

2016-05-01

Laser diodes fabricated from the AlGaInN material system is an emerging technology for defence and security applications; in particular for free space laser communication. Conventional underwater communication is done acoustically with very slow data rates, short reach, and vulnurable for interception. AlGaInN blue-green laser diode technology allows the possibility of both airbourne links and underwater telecom that operate at very fast data rates (GHz), long reach (100's of metres underwater) and can also be quantum encrypted. The latest developments in AlGaInN laser diode technology are reviewed for defence and security applications. The AlGaInN material system allows for laser diodes to be fabricated over a very wide range of wavelengths from u.v., ~380nm, to the visible ~530nm, by tuning the indium content of the laser GaInN quantum well. Ridge waveguide laser diode structures are fabricated to achieve single mode operation with optical powers of <100mW. Visible light communications at high frequency (up to 2.5 Gbit/s) using a directly modulated 422nm Galliumnitride (GaN) blue laser diode is reported in free-space and underwater.

Investigations of shot reproducibility for the SMP diode at 4.5 MV.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bennett, Nichelle; Crain, Marlon D.; Droemer, Darryl W.

In experiments conducted on the RITS-6 accelerator, the SMP diode exhibits sig- ni cant shot-to-shot variability. Speci cally, for identical hardware operated at the same voltage, some shots exhibit a catastrophic drop in diode impedance. A study is underway to identify sources of shot-to-shot variations which correlate with diode impedance collapse. To remove knob emission as a source, only data from a shot series conducted with a 4.5-MV peak voltage are considered. The scope of this report is limited to sources of variability which occur away from the diode, such as power ow emission and trajectory changes, variations in pulsedmore » power, dustbin and transmission line alignment, and di erent knob shapes. We nd no changes in the transmission line hardware, alignment, or hardware preparation methods which correlate with impedance collapse. However, in classifying good versus poor shots, we nd that there is not a continuous spectrum of diode impedance behavior but that the good and poor shots can be grouped into two distinct impedance pro les. This result forms the basis of a follow-on study focusing on the variability resulting from diode physics. 3« less

Low absorption loss p-AlGaN superlattice cladding layer for current-injection deep ultraviolet laser diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Martens, M.; Kuhn, C.; Ziffer, E.

2016-04-11

Current injection into AlGaN-based laser diode structures with high aluminum mole fractions for deep ultraviolet emission is investigated. The electrical characteristics of laser diode structures with different p-AlGaN short period superlattice (SPSL) cladding layers with various aluminum mole fractions are compared. The heterostructures contain all elements that are needed for a current-injection laser diode including cladding and waveguide layers as well as an AlGaN quantum well active region emitting near 270 nm. We found that with increasing aluminum content in the p-AlGaN cladding, the diode turn-on voltage increases, while the series resistance slightly decreases. By introducing an SPSL instead of bulkmore » layers, the operating voltage is significantly reduced. A gain guided broad area laser diode structure with transparent p-Al{sub 0.70}Ga{sub 0.30}N waveguide layers and a transparent p-cladding with an average aluminum content of 81% was designed for strong confinement of the transverse optical mode and low optical losses. Using an optimized SPSL, this diode could sustain current densities of more than 4.5 kA/cm{sup 2}.« less

Dynamical regimes and intracavity propagation delay in external cavity semiconductor diode lasers

NASA Astrophysics Data System (ADS)

Jayaprasath, E.; Sivaprakasam, S.

2017-11-01

Intracavity propagation delay, a delay introduced by a semiconductor diode laser, is found to significantly influence synchronization of multiple semiconductor diode lasers, operated either in stable or in chaotic regime. Two diode lasers coupled in unidirectional scheme is considered in this numerical study. A diode laser subjected to an optical feedback, also called an external cavity diode laser, acts as the transmitter laser (TL). A solitary diode laser acts as the receiver laser (RL). The optical output of the TL is coupled to the RL and laser operating parameters are optimized to achieve synchronization in their output intensities. The time-of-flight between the TL and RL introduces an intercavity time delay in the dynamics of RL. In addition to this, an intracavity propagation delay arises as the TL's field propagated within the RL. This intracavity propagation delay is evaluated by cross-correlation analysis between the output intensities of the lasers. The intracavity propagation delay is found to increase as the external cavity feedback rate of TL is increased, while an increment in the injection rate between the two lasers resulted in a reduction of intracavity propagation delay.

Spectra of surface plasmon polariton enhanced electroluminescence from electroformed Al-Al{sub 2}O{sub 3}-Ag diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hickmott, T. W.

Narrow band-pass filters have been used to measure the spectral distribution of electroluminescent photons with energies between 1.8 eV and 3.0 eV from electroformed Al-Al{sub 2}O{sub 3}-Ag diodes with anodic Al{sub 2}O{sub 3} thicknesses between 12 nm and 18 nm. Electroforming of metal-insulator-metal (MIM) diodes is a non-destructive dielectric breakdown that results in a conducting channel in the insulator and changes the initial high resistance of the MIM diode to a low resistance state. It is a critical step in the development of resistive-switching memories that utilize MIM diodes as the active element. Electroforming of Al-Al{sub 2}O{sub 3}-Ag diodes in vacuum results in voltage-controlledmore » negative resistance (VCNR) in the current-voltage (I-V) characteristics. Electroluminescence (EL) and electron emission into vacuum (EM) develop simultaneously with the current increase that results in VCNR in the I-V characteristics. EL is due to recombination of electrons injected at the Al-Al{sub 2}O{sub 3} interface with radiative defect centers in Al{sub 2}O{sub 3}. Measurements of EL photons between 1.8 eV and 3.0 eV using a wide band-pass filter showed that EL intensity is exponentially dependent on Al{sub 2}O{sub 3} thickness for Al-Al{sub 2}O{sub 3}-Ag diodes between 12 nm and 20 nm thick. Enhanced El intensity in the thinnest diodes is attributed to an increase in the spontaneous emission rate of recombination centers due to high electromagnetic fields generated in Al{sub 2}O{sub 3} when EL photons interact with electrons in Ag or Al to form surface plasmon polaritons at the Al{sub 2}O{sub 3}-Ag or Al{sub 2}O{sub 3}-Al interface. El intensity is a maximum at 2.0–2.2 eV for Al-Al{sub 2}O{sub 3}-Ag diodes with Al{sub 2}O{sub 3} thicknesses between 12 nm and 18 nm. EL in diodes with 12 nm or 14 nm of Al{sub 2}O{sub 3} is enhanced by factors of 8–10 over EL from a diode with 18 nm of Al{sub 2}O{sub 3}. The extent of EL enhancement in the thinnest diodes can vary significantly between samples. A narrow band of recombination centers was found in one Al-Al{sub 2}O{sub 3}-Ag diode with 12 nm of Al{sub 2}O{sub 3}; it had EL intensity 100 times greater at 2.15 eV than the diode with 18 nm of Al{sub 2}O{sub 3}. EL intensity for photons with energies greater than 2.6 eV is nearly the same for all diodes.« less

Simple tunnel diode circuit for accurate zero crossing timing

NASA Technical Reports Server (NTRS)

Metz, A. J.

1969-01-01

Tunnel diode circuit, capable of timing the zero crossing point of bipolar pulses, provides effective design for a fast crossing detector. It combines a nonlinear load line with the diode to detect the zero crossing of a wide range of input waveshapes.

1047 nm laser diode master oscillator Nd:YLF power amplifier laser system

NASA Technical Reports Server (NTRS)

Yu, A. W.; Krainak, M. A.; Unger, G. L.

1993-01-01

A master oscillator power amplifier (MOPA) laser transmitter system at 1047 nm wavelength using a semiconductor laser diode and a diode pumped solid state (Nd:YLF) laser (DPSSL) amplifier is described. A small signal gain of 23 dB, a near diffraction limited beam, 1 Gbit/s modulation rates and greater than 0.6 W average power are achieved. This MOPA laser has the advantage of amplifying the modulation signal from the laser diode master oscillator (MO) with no signal degradation.

Design, fabrication and testing of a thermal diode

NASA Technical Reports Server (NTRS)

Swerdling, B.; Kosson, R.

1972-01-01

Heat pipe diode types are discussed. The design, fabrication and test of a flight qualified diode for the Advanced Thermal Control Flight Experiment (ATFE) are described. The review covers the use of non-condensable gas, freezing, liquid trap, and liquid blockage techniques. Test data and parametric performance are presented for the liquid trap and liquid blockage techniques. The liquid blockage technique was selected for the ATFE diode on the basis of small reservoir size, low reverse mode heat transfer, and apparent rapid shut-off.

Universal EUV in-band intensity detector

DOEpatents

Berger, Kurt W.

2004-08-24

Extreme ultraviolet light is detected using a universal in-band detector for detecting extreme ultraviolet radiation that includes: (a) an EUV sensitive photodiode having a diode active area that generates a current responsive to EUV radiation; (b) one or more mirrors that reflects EUV radiation having a defined wavelength(s) to the diode active area; and (c) a mask defining a pinhole that is positioned above the diode active area, wherein EUV radiation passing through the pinhole is restricted substantially to illuminating the diode active area.

Avalanche diodes for the generation of coherent radiation

NASA Technical Reports Server (NTRS)

Penfield, P., Jr.

1973-01-01

Solid state devices and characterization, and optimum imbedding networks for realizing best performance were investigated along with a barrier injection transit time diode. These diodes were investigated for possible application as microwave amplifiers and oscillators. Measurements were made of diode noise figures in the frequency ranges of 4 - 6 GHz. Initial results indicate that a noise figure of 6 - 8 db may be possible. Optimum device structure and fabrication techniques necessary for low noise performance were investigated. Previously published documents on electrodynamics are included.

Photonic Breast Tomography and Tumor Aggressiveness Assessment

DTIC Science & Technology

2012-07-01

c) Raw Image 11 The entrance face of the slab sample (source plane) was illuminated by a 100-mW 790-nm diode laser beam. The multi-source...schematically shown in Figure 6. A 10mW 785 nm diode laser beam was used to illuminate the first sample, while a 100mW 785 nm diode laser beam was used for the...signal transmitting narrow-band filter; TS = translation stage; CCD = charge cou- pled device; and PC = computer. Continuous wave 790-nm diode laser

Fabrication and characterization of NiO based metal-insulator-metal diode using Langmuir-Blodgett method for high frequency rectification

NASA Astrophysics Data System (ADS)

Azad, Ibrahim; Ram, Manoj K.; Goswami, D. Yogi; Stefanakos, Elias

2018-04-01

Thin film metal-insulator-metal (MIM) diodes have attracted significant attention for use in infrared energy harvesting and detection applications. As demonstrated over the past decades, MIM or metal-insulator-insulator-metal (MIIM) diodes can operate at the THz frequencies range by quantum tunneling of electrons. The aim of this work is to synthesize required ultra-thin insulating layers and fabricate MIM diodes using the Langmuir-Blodgett (LB) technique. The nickel stearate (NiSt) LB precursor film was deposited on glass, silicon (Si), ITO glass and gold coated silicon substrates. The photodesorption (UV exposure) and the thermodesorption (annealing at 100 °C and 350 °C) methods were used to remove organic components from the NiSt LB film and to achieve a uniform homogenous nickel oxide (NiO) film. These ultrathin NiO films were characterized by EDS, AFM, FTIR and cyclic voltammetry methods, respectively. The MIM diode was fabricated by depositing nickel (Ni) on the NiO film, all on a gold (Au) plated silicon (Si) substrate. The current (I)-voltage (V) characteristics of the fabricated diode were studied to understand the conduction mechanism assumed to be tunneling of electron through the ultra-thin insulating layer. The sensitivity of the diode was measured to be as high as 35 V-1. The diode resistance was ˜100 ohms (at a bias voltage of 0.60 V), and the rectification ratio was about 22 (for a signal voltage of ±200 mV). At the bias point, the diode response demonstrated significant non-linearity and high asymmetry, which are very desirable characteristics for applications in infrared detection and harvesting.

Role of diode lasers (800-980 nm) as adjuncts to scaling and root planing in the treatment of chronic periodontitis: a systematic review.

PubMed

Qadri, Talat; Javed, Fawad; Johannsen, Gunnar; Gustafsson, Anders

2015-11-01

The purpose of this study was to systematically review currently available evidence regarding the role of diode lasers (810-980 nm) as adjuncts to scaling and root planing (SRP) in the treatment of chronic periodontitis (CP). Mechanical instrumentation of periodontal tissues followed by diode laser application leads to complete removal of pocket epithelium compared with conventional SRP. To address the focused question "Is SRP with adjunct diode lasers (810-980 nm) therapy more effective in the treatment of CP than when CP is treated by SRP alone?" databases were searched using the following key words: chronic periodontitis, diode laser, surgical, AND scaling and root planing, periodontal diseases, periodontal therapy, AND periodontal treatment. Original studies were included. Letters to the editor, case reports, commentaries, and reviews were excluded. Ten clinical studies were included. In all studies, patients were systemically healthy, and cigarette smokers were included in two studies. In five studies, SRP plus diode laser application was more effective in the treatment of CP than SRP, and three studies showed no difference. In two studies, there was a moderate reduction in periodontal inflammation using SRP plus diode laser. The diameter of optic fiber, laser wavelengths, power, pulse repetition rate, and duration of laser exposure ranged between 300 μm and 2 mm, 810-980 nm, 0.8-2.5 W, 10-60 Hz, and 10-100 ms, respectively. In CP patients with probing depths ≤5 mm, diode lasers, SRP plus diode laser (800-980 nm) is more effective in the treatment of CP than when SRP is used alone.

High performance MIIM diode based on cobalt oxide/titanium oxide

NASA Astrophysics Data System (ADS)

Herner, S. B.; Weerakkody, A. D.; Belkadi, A.; Moddel, G.

2017-05-01

Optical rectennas for infrared energy harvesting commonly incorporate metal/double-insulator/metal diodes. Required diode characteristics include high responsivity and low resistance near zero bias with a sub-micron area, which have not been obtainable simultaneously. Diodes based on a new material set, Co/Co3O4/TiO2/Ti and an area of 0.071 μm2, provide a median maximum responsivity of 4.1 A/W, a median zero-bias responsivity of 1.2 A/W, and a median resistance of 14 kΩ. The highest performing diode has a maximum responsivity of 4.4 A/W, a zero-bias responsivity of 2.2 A/W, and a resistance of 18 kΩ.

Test apparatus for locating shorts during assembly of electrical buses

NASA Technical Reports Server (NTRS)

Deboo, G. J.; Devine, D. L. (Inventor)

1981-01-01

A test apparatus is described for locating electrical shorts that is especially suited for use while an electrical circuit is being fabricated or assembled. A ring counter derives input pulses from a square wave oscillator. The outputs of the counter are fed through transistors to an array of light emitting diodes. Each diode is connected to an electrical conductor, such as a bus bar, that is to be tested. In the absence of a short between the electrical conductors the diodes are sequentially illuminated. When a short occurs, a comparator/multivibrator circuit triggers an alarm and stops the oscillator and the sequential energization of the diodes. The two diodes that remain illuminated identify the electrical conductors that are shorted.

Fully utilizing high power diode lasers by synergizing diode laser light sources and beam shaping micro-optics

NASA Astrophysics Data System (ADS)

Fan, Yingmin; Wang, Jingwei; Cai, Lei; Mitra, Thomas; Hauschild, Dirk; Zah, Chung-En; Liu, Xingsheng

2018-02-01

High power diode lasers (HPDLs) offer the highest wall-plug efficiency, highest specific power (power-to-weight ratio), arguably the lowest cost and highest reliability among all laser types. However, the poor beam quality of commercially HPDLs is the main bottleneck limiting their direct applications requiring high brightness at least in one dimension. In order to expand the applications of HPDLs, beam shaping and optical design are essential. In this work, we report the recent progresses on maximizing applications of HPDLs by synergizing diode laser light source and beam shaping micro-optics. Successful examples of matching of diode laser light sources and beam shaping micro-optics driving new applications are presented.

Cellulose ionics: switching ionic diode responses by surface charge in reconstituted cellulose films.

PubMed

Aaronson, Barak D B; Wigmore, David; Johns, Marcus A; Scott, Janet L; Polikarpov, Igor; Marken, Frank

2017-09-25

Cellulose films as well as chitosan-modified cellulose films of approximately 5 μm thickness, reconstituted from ionic liquid media onto a poly(ethylene-terephthalate) (PET, 6 μm thickness) film with a 5, 10, 20, or 40 μm diameter laser-drilled microhole, show significant current rectification in aqueous NaCl. Reconstituted α-cellulose films provide "cationic diodes" (due to predominant cation conductivity) whereas chitosan-doped cellulose shows "anionic diode" effects (due to predominant anion conductivity). The current rectification, or "ionic diode" behaviour, is investigated as a function of NaCl concentration, pH, microhole diameter, and molecular weight of the chitosan dopant. Future applications are envisaged exploiting the surface charge induced switching of diode currents for signal amplification in sensing.

Enhanced vbasis laser diode package

DOEpatents

Deri, Robert J.; Chen, Diana; Bayramian, Andy; Freitas, Barry; Kotovsky, Jack

2014-08-19

A substrate having an upper surface and a lower surface is provided. The substrate includes a plurality of v-grooves formed in the upper surface. Each v-groove includes a first side and a second side perpendicular to the first side. A laser diode bar assembly is disposed within each of the v-grooves and attached to the first side. The laser diode bar assembly includes a first adhesion layer disposed on the first side of the v-groove, a metal plate attached to the first adhesion layer, a second adhesion layer disposed over the metal plate, and a laser diode bar attached to the second adhesion layer. The laser diode bar has a coefficient of thermal expansion (CTE) substantially similar to that of the metal plate.

Zener diode controls switching of large direct currents

NASA Technical Reports Server (NTRS)

1965-01-01

High-current zener diode is connected in series with the positive input terminal of a dc supply to block the flow of direct current until a high-frequency control signal is applied across the zener diode. This circuit controls the switching of large dc signals.

Characterization of High-power Quasi-cw Laser Diode Arrays

NASA Technical Reports Server (NTRS)

Stephen, Mark A.; Vasilyev, Aleksey; Troupaki, Elisavet; Allan, Graham R.; Kashem, Nasir B.

2005-01-01

NASA s requirements for high reliability, high performance satellite laser instruments have driven the investigation of many critical components; specifically, 808 nm laser diode array (LDA) pump devices. Performance and comprehensive characterization data of Quasi-CW, High-power, laser diode arrays is presented.

Improving Reliability of High Power Quasi-CW Laser Diode Arrays for Pumping Solid State Lasers

NASA Technical Reports Server (NTRS)

Amzajerdian, Farzin; Meadows, Byron L.; Baker, Nathaniel R.; Barnes, Bruce W.; Baggott, Renee S.; Lockard, George E.; Singh, Upendra N.; Kavaya, Michael J.

2005-01-01

Most Lidar applications rely on moderate to high power solid state lasers to generate the required transmitted pulses. However, the reliability of solid state lasers, which can operate autonomously over long periods, is constrained by their laser diode pump arrays. Thermal cycling of the active regions is considered the primary reason for rapid degradation of the quasi-CW high power laser diode arrays, and the excessive temperature rise is the leading suspect in premature failure. The thermal issues of laser diode arrays are even more drastic for 2-micron solid state lasers which require considerably longer pump pulses compared to the more commonly used pump arrays for 1-micron lasers. This paper describes several advanced packaging techniques being employed for more efficient heat removal from the active regions of the laser diode bars. Experimental results for several high power laser diode array devices will be reported and their performance when operated at long pulsewidths of about 1msec will be described.

T/R switch design for short-range measurements, part 6.1A

NASA Technical Reports Server (NTRS)

Yu, B.

1984-01-01

The positive intrinsic negative (PIN) diode switch which is designed to protect the receiver from burnout or damage on transmission and channel the echo signal to the receiver on reception is outlined. The receiver must be protected firmly. A schematic diagram of a transformer rectifier (TR-ATR) switch for the Urbana Radar is shown. The T/R switch consists of a half wavelength coaxial cavity with tuning condenser and PIN diodes. Two UM4300 PIN diodes were mounted between the inner and outer conductor. The dc biasing voltage required for the PIN diodes is supplied by a control circuit. On transmission, the PIN diodes are forward biased to about 0.5 amperes. On reception, about 10 volts reverse voltage is applied to the diodes, which produces an initial reverse current to speed the recovery time. The T/R switch characteristics are estimated and the result of testing at different peak transmitter powers from 410 kW to 1500 kW is shown.

Simultaneous dual-functioning InGaN/GaN multiple-quantum-well diode for transferrable optoelectronics

NASA Astrophysics Data System (ADS)

Shi, Zheng; Yuan, Jialei; Zhang, Shuai; Liu, Yuhuai; Wang, Yongjin

2017-10-01

We propose a wafer-level procedure for the fabrication of 1.5-mm-diameter dual functioning InGaN/GaN multiple-quantum-well (MQW) diodes on a GaN-on-silicon platform for transferrable optoelectronics. Nitride semiconductor materials are grown on (111) silicon substrates with intermediate Al-composition step-graded buffer layers, and membrane-type MQW-diode architectures are obtained by a combination of silicon removal and III-nitride film backside thinning. Suspended MQW-diodes are directly transferred from silicon to foreign substrates such as metal, glass and polyethylene terephthalate by mechanically breaking the support beams. The transferred MQW-diodes display strong electroluminescence under current injection and photodetection under light irradiation. Interestingly, they demonstrate a simultaneous light-emitting light-detecting function, endowing the 1.5-mm-diameter MQW-diode with the capability of producing transferrable optoelectronics for adjustable displays, wearable optical sensors, multifunctional energy harvesting, flexible light communication and monolithic photonic circuit.

Improved ultraviolet emission performance from polarization-engineered n-ZnO/p-GaN heterojunction diode

NASA Astrophysics Data System (ADS)

Jiang, Junyan; Zhang, Yuantao; Chi, Chen; Shi, Zhifeng; Yan, Long; Li, Pengchong; Zhang, Baolin; Du, Guotong

2016-02-01

O-polar ZnO films were grown on N-polar p-GaN/sapphire substrates by photo-assisted metal-organic chemical vapor deposition, and further heterojunction light-emitting diodes based O-polar n-ZnO/N-polar p-GaN were proposed and fabricated. It is experimentally demonstrated that the interface polarization of O-polar n-ZnO/N-polar p-GaN heterojunction can shift the location of the depletion region from the interface deep into the ZnO side. When a forward bias is applied to the proposed diode, a strong and high-purity ultraviolet emission located at 385 nm can be observed. Compared with conventional Zn-polar n-ZnO/Ga-polar p-GaN heterostructure diode, the ultraviolet emission intensity of the proposed heterojunction diode is greatly enhanced due to the presence of polarization-induced inversion layer at the ZnO side of the heterojunction interface. This work provides an innovative path for the design and development of ZnO-based ultraviolet diode.

Tribotronic Tuning Diode for Active Analog Signal Modulation.

PubMed

Zhou, Tao; Yang, Zhi Wei; Pang, Yaokun; Xu, Liang; Zhang, Chi; Wang, Zhong Lin

2017-01-24

Realizing active interaction with external environment/stimuli is a great challenge for current electronics. In this paper, a tribotronic tuning diode (TTD) is proposed by coupling a variable capacitance diode and a triboelectric nanogenerator in free-standing sliding mode. When the friction layer is sliding on the device surface for electrification, a reverse bias voltage is created and applied to the diode for tuning the junction capacitance. When the sliding distance increases from 0 to 25 mm, the capacitance of the TTD decreases from about 39 to 8 pF. The proposed TTD has been integrated into analog circuits and exhibited excellent performances in frequency modulation, phase shift, and filtering by sliding a finger. This work has demonstrated tunable diode and active analog signal modulation by tribotronics, which has great potential to replace ordinary variable capacitance diodes in various practical applications such as signal processing, electronic tuning circuits, precise tuning circuits, active sensor networks, electronic communications, remote controls, flexible electronics, etc.

Clinical comparison between the bleaching efficacy of light-emitting diode and diode laser with sodium perborate.

PubMed

Koçak, Sibel; Koçak, Mustafa Murat; Sağlam, Baran Can

2014-04-01

The aim of this clinical study was to test the efficacy of a light-emitting diode (LED) light and a diode laser, when bleaching with sodium perborate. Thirty volunteers were selected to participate in the study. The patients were randomly divided into two groups. The initial colour of each tooth to be bleached was quantified with a spectrophotometer. In group A, sodium perborate and distilled water were mixed and placed into the pulp chamber, and the LED light was source applied. In group B, the same mixture was used, and the 810 nm diode laser was applied. The final colour of each tooth was quantified with the same spectrophotometer. Initial and final spectrophotometer values were recorded. Mann-Whitney U-test and Wicoxon tests were used to test differences between both groups. Both devices successfully whitened the teeth. No statistical difference was found between the efficacy of the LED light and the diode laser. © 2013 The Authors. Australian Endodontic Journal © 2013 Australian Society of Endodontology.

Simulated electron affinity tuning in metal-insulator-metal (MIM) diodes

NASA Astrophysics Data System (ADS)

Mistry, Kissan; Yavuz, Mustafa; Musselman, Kevin P.

2017-05-01

Metal-insulator-metal diodes for rectification applications must exhibit high asymmetry, nonlinearity, and responsivity. Traditional methods of improving these figures of merit have consisted of increasing insulator thickness, adding multiple insulator layers, and utilizing a variety of metal contact combinations. However, these methods have come with the price of increasing the diode resistance and ultimately limiting the operating frequency to well below the terahertz regime. In this work, an Airy Function Transfer Matrix simulation method was used to observe the effect of tuning the electron affinity of the insulator as a technique to decrease the diode resistance. It was shown that a small increase in electron affinity can result in a resistance decrease in upwards of five orders of magnitude, corresponding to an increase in operating frequency on the same order. Electron affinity tuning has a minimal effect on the diode figures of merit, where asymmetry improves or remains unaffected and slight decreases in nonlinearity and responsivity are likely to be greatly outweighed by the improved operating frequency of the diode.

A 17 GHz molecular rectifier

PubMed Central

Trasobares, J.; Vuillaume, D.; Théron, D.; Clément, N.

2016-01-01

Molecular electronics originally proposed that small molecules sandwiched between electrodes would accomplish electronic functions and enable ultimate scaling to be reached. However, so far, functional molecular devices have only been demonstrated at low frequency. Here, we demonstrate molecular diodes operating up to 17.8 GHz. Direct current and radio frequency (RF) properties were simultaneously measured on a large array of molecular junctions composed of gold nanocrystal electrodes, ferrocenyl undecanethiol molecules and the tip of an interferometric scanning microwave microscope. The present nanometre-scale molecular diodes offer a current density increase by several orders of magnitude compared with that of micrometre-scale molecular diodes, allowing RF operation. The measured S11 parameters show a diode rectification ratio of 12 dB which is linked to the rectification behaviour of the direct current conductance. From the RF measurements, we extrapolate a cut-off frequency of 520 GHz. A comparison with the silicon RF-Schottky diodes, architecture suggests that the RF-molecular diodes are extremely attractive for scaling and high-frequency operation. PMID:27694833

Quasi-CW 110 kW AlGaAs Laser Diode Array Module for Inertial Fusion Energy Laser Driver

NASA Astrophysics Data System (ADS)

Kawashima, Toshiyuki; Kanzaki, Takeshi; Matsui, Ken; Kato, Yoshinori; Matsui, Hiroki; Kanabe, Tadashi; Yamanaka, Masanobu; Nakatsuka, Masahiro; Izawa, Yasukazu; Nakai, Sadao; Miyamoto, Masahiro; Kan, Hirofumi; Hiruma, Teruo

2001-12-01

We have successfully demonstrated a large aperture 803 nm AlGaAs diode laser module as a pump source for a 1053 nm, 10 J output Nd:glass slab laser amplifier for diode-pumped solid-state laser (DPSSL) fusion driver. Detailed performance results of the laser diode module are presented, including bar package and stack configuration, and their thermal design and analysis. A sufficiently low thermal impedance of the stack was realized by combining backplane liquid cooling configuration with modular bar package architecture. Total peak power of 110 kW and electrical to optical conversion efficiency of 46% were obtained from the module consisting of a total of 1000 laser diode bars. A peak intensity of 2.6 kW/cm2 was accomplished across an emitting area of 418 mm× 10 mm. Currently, this laser diode array module with a large two-dimensional aperture is, to our knowledge, the only operational pump source for the high output energy DPSSL.

Overview on new diode lasers for defense applications

NASA Astrophysics Data System (ADS)

Neukum, Joerg

2012-11-01

Diode lasers have a broad wavelength range, from the visible to beyond 2.2μm. This allows for various applications in the defense sector, ranging from classic pumping of DPSSL in range finders or target designators, up to pumping directed energy weapons in the 50+ kW range. Also direct diode applications for illumination above 1.55μm, or direct IR countermeasures are of interest. Here an overview is given on some new wavelengths and applications which are recently under discussion. In this overview the following aspects are reviewed: • High Power CW pumps at 808 / 880 / 940nm • Pumps for DPAL - Diode Pumped Alkali Lasers • High Power Diode Lasers in the range < 1.0 μm • Scalable Mini-Bar concept for high brightness fiber coupled modules • The Light Weight Fiber Coupled module based on the Mini-Bar concept Overall, High Power Diode Lasers offer many ways to be used in new applications in the defense market.

Method and system for homogenizing diode laser pump arrays

DOEpatents

Bayramian, Andrew James

2016-05-03

An optical amplifier system includes a diode pump array including a plurality of semiconductor diode laser bars disposed in an array configuration and characterized by a periodic distance between adjacent semiconductor diode laser bars. The periodic distance is measured in a first direction perpendicular to each of the plurality of semiconductor diode laser bars. The diode pump array provides a pump output propagating along an optical path and characterized by a first intensity profile measured as a function of the first direction and having a variation greater than 10%. The optical amplifier system also includes a diffractive optic disposed along the optical path. The diffractive optic includes a photo-thermo-refractive glass member. The optical amplifier system further includes an amplifier slab having an input face and position along the optical path and separated from the diffractive optic by a predetermined distance. A second intensity profile measured at the input face of the amplifier slab as a function of the first direction has a variation less than 10%.

Method and system for homogenizing diode laser pump arrays

DOEpatents

Bayramian, Andy J

2013-10-01

An optical amplifier system includes a diode pump array including a plurality of semiconductor diode laser bars disposed in an array configuration and characterized by a periodic distance between adjacent semiconductor diode laser bars. The periodic distance is measured in a first direction perpendicular to each of the plurality of semiconductor diode laser bars. The diode pump array provides a pump output propagating along an optical path and characterized by a first intensity profile measured as a function of the first direction and having a variation greater than 10%. The optical amplifier system also includes a diffractive optic disposed along the optical path. The diffractive optic includes a photo-thermo-refractive glass member. The optical amplifier system further includes an amplifier slab having an input face and position along the optical path and separated from the diffractive optic by a predetermined distance. A second intensity profile measured at the input face of the amplifier slab as a function of the first direction has a variation less than 10%.

Characterization and Modeling Analysis for Metal-Semiconductor-Metal GaAs Diodes with Pd/SiO2 Mixture Electrode

PubMed Central

Tan, Shih-Wei; Lai, Shih-Wen

2012-01-01

Characterization and modeling of metal-semiconductor-metal (MSM) GaAs diodes using to evaporate SiO2 and Pd simultaneously as a mixture electrode (called M-MSM diodes) compared with similar to evaporate Pd as the electrode (called Pd-MSM diodes) were reported. The barrier height (φ b) and the Richardson constant (A*) were carried out for the thermionic-emission process to describe well the current transport for Pd-MSM diodes in the consideration of the carrier over the metal-semiconductor barrier. In addition, in the consideration of the carrier over both the metal-semiconductor barrier and the insulator-semiconductor barrier simultaneously, thus the thermionic-emission process can be used to describe well the current transport for M-MSM diodes. Furthermore, in the higher applied voltage, the carrier recombination will be taken into discussion. Besides, a composite-current (CC) model is developed to evidence the concepts. Our calculated results are in good agreement with the experimental ones. PMID:23226352

In situ current-voltage characterization of swift heavy ion irradiated Au/n-GaAs Schottky diode at low temperature

NASA Astrophysics Data System (ADS)

Singh, R.; Arora, S. K.; Singh, J. P.; Kanjilal, D.

A Au/n-GaAs(100) Schottky diode was irradiated at 80 K by a 180 MeV Ag-107(14+) ion beam. In situ current-voltage (I--V) characterization of the diode was performed at various irradiation fluences ranging from 1x10(10) to 1x10(13) ions cm(-2) . The semiconductor was heavily doped (carrier concentration=1x10(18) cm(-3)), hence thermionic field emission was assumed to be the dominant current transport mechanism in the diode. Systematic variations in various parameters of the Schottky diode like characteristic energy E-0 , ideality factor n , reverse saturation current I-S , flatband barrier height Phi(bf) and reverse leakage current I-R have been observed with respect to the irradiation fluence. The nuclear and electronic energy losses of the swift heavy ion affect the interface state density at the metal-semiconductor interface resulting in observed variations in Schottky diode parameters.

The Pierce-diode approximation to the single-emitter plasma diode

NASA Astrophysics Data System (ADS)

Ender, A. Ya.; Kuhn, S.; Kuznetsov, V. I.

2006-11-01

The possibility of modeling fast processes in the collisionless single-emitter plasma diode (Knudsen diode with surface ionization, KDSI) by means of the Pierce-diode is studied. The KDSI is of practical importance in that it is an almost exact model of thermionic energy converters (TICs) in the collisionless regime and can also be used to model low-density Q-machines. At high temperatures, the Knudsen TIC comes close to the efficiency of the Carnot cycle and hence is the most promising converter of thermal to electric energy. TICs can be applied as component parts in high-temperature electronics. It is shown that normalizations must be chosen appropriately in order to compare the plasma characteristics of the two models: the KDSI and the Pierce-diode. A linear eigenmode theory of the KDSI is developed. For both nonlinear time-independent states and linear eigenmodes without electron reflection, excellent agreement is found between the analytical potential distributions for the Pierce-diode and the corresponding numerical ones for the KDSI. For the states with electron reflection, the agreement is satisfactory in a qualitative sense. A full classification of states of both diodes for the regimes with and without electron reflection is presented. The effect of the thermal spread in electron velocities on the potential distributions and the (ɛ,η) diagrams is analyzed. Generally speaking, the methodology developed is usefully applicable to a variety of systems in which the electrons have beam-like distributions.

Electrical properties of epitaxial 3C- and 6H-SiC p-n junction diodes produced side-by-side on 6H-SiC substrates

NASA Technical Reports Server (NTRS)

Neudeck, Philip G.; Larkin, David J.; Starr, Jonathan E.; Powell, J. Anthony; Salupo, Carl S.; Matus, Lawrence G.

1994-01-01

3C-SiC (beta-SiC) and 6H-SiC p-n junction diodes have been fabricated in regions of both 3C-SiC and 6H-SiC epitaxial layers which were grown side-by-side on low-tilt-angle 6H-SiC substrates via a chemical vapor deposition (CVD) process. Several runs of diodes exhibiting state-of-the-art electrical characteristics were produced, and performance characteristics were measured and compared as a function of doping, temperature, and polytype. The first 3C-SiC diodes which rectify to reverse voltages in excess of 300 V were characterized, representing a six-fold blocking voltage improvement over experimental 3C-SiC diodes produced by previous techniques. When placed under sufficient forward bias, the 3C-SiC diodes emit significantly bright green-yellow light while the 6H-SiC diodes emit in the blue-violet. The 6H-SiC p-n junction diodes represent the first reported high-quality 6H-SiC devices to be grown by CVD on very low-tilt-angle (less than 0.5 deg off the (0001) silicon face) 6H substrates. The reverse leakage current of a 200 micron diameter circular device at 1100 V reverse bias was less than 20 nA at room temperature, and excellent rectification characteristics were demonstrated at the peak characterization temperature of 400 C.

High brightness diode lasers controlled by volume Bragg gratings

NASA Astrophysics Data System (ADS)

Glebov, Leonid

2017-02-01

Volume Bragg gratings (VBGs) recorded in photo-thermo-refractive (PTR) glass are holographic optical elements that are effective spectral and angular filters withstanding high power laser radiation. Reflecting VBGs are narrow-band spectral filters while transmitting VBGs are narrow-band angular filters. The use of these optical elements in external resonators of semiconductor lasers enables extremely resonant feedback that provides dramatic spectral and angular narrowing of laser diodes radiation without significant power and efficiency penalty. Spectral narrowing of laser diodes by reflecting VBGs demonstrated in wide spectral region from near UV to 3 μm. Commercially available VBGs have spectral width ranged from few nanometers to few tens of picometers. Efficient spectral locking was demonstrated for edge emitters (single diodes, bars, modules, and stacks), vertical cavity surface emitting lasers (VCSELs), grating coupled surface emitting lasers (GCSELs), and interband cascade lasers (ICLs). The use of multiplexed VBGs provides multiwavelength emission from a single emitter. Spectrally locked semiconductor lasers demonstrated CW power from milliwatts to a kilowatt. Angular narrowing by transmitting VBGs enables single transverse mode emission from wide aperture diode lasers having resonators with great Fresnel numbers. This feature provides close to diffraction limit divergence along a slow axis of wide stripe edge emitters. Radiation exchange between lasers by means of spatially profiled or multiplexed VBGs enables coherent combining of diode lasers. Sequence of VBGs or multiplexed VBGs enable spectral combining of spectrally narrowed diode lasers or laser modules. Thus the use of VBGs for diode lasers beam control provides dramatic increase of brightness.

Antibacterial Effect of Diode Laser in Pulpectomy of Primary Teeth.

PubMed

Bahrololoomi, Zahra; Fekrazad, Reza; Zamaninejad, Shiva

2017-01-01

Introduction: Laser irradiation has been suggested as an adjunct to traditional methods of canal preparation but few studies are available on the antibacterial effect of diode laser in pulpectomy of primary teeth. The purpose of the present study is to investigate the antibacterial effect of diode laser in pulpectomy of primary teeth, in addition to define the optimal and harmless diode lasing conditions in the root canal. Methods: A total of 125 single rooted primary teeth were selected. After traditional canal cleaning, they were divided in 2 groups. Sixty-five specimens after culturing of Enterococcus faecalis into the canals, were divided in 3 groups: (1) traditional canal cleaning with 0.5% NaOCl irrigation, (2) method of group 1+ 1.5 W diode laser (980 nm, pulse), (3) without treatment (5 specimens). Then the specimens were cultured and after colony counting under light microscope, were statistically analyzed by Kruskal-Wallis and Mann-Whitney tests. For 60 specimens, temperature rise of apical and cervical parts of the external root surface were measured using 2 thermocouple type K, when radiating a 1.5 W diode laser into the canal. Results: In the first experiment, the diode laser group showed tmost reduction in bacterial count. And in the second experiment, the mean temperature rise of external root surface was less than the threshold of periodontal ligament (PDL) damage. Conclusion: Diode laser with a power output of 1.5 W, is effective in reduction of E. faecalis bacterial count without damaging periodontal structures.

Spatial Combining of Laser-Diode Beams for Pumping an NPRO

NASA Technical Reports Server (NTRS)

Gelsinger, Paul; Liu, Duncan; Mulder, Jerry; Aguayo, Francisco

2008-01-01

A free-space optical beam combiner now undergoing development makes it possible to use the outputs of multiple multimode laser diodes to pump a neodymium-doped yttrium aluminum garnet (Nd:YAG) non-planar ring oscillator (NPRO) laser while ensuring that the laser operates at only a single desired frequency. Heretofore, a Nd:YAG NPRO like the present one has been pumped by a single multimode laser-diode beam delivered via an optical fiber. It would be desirable to use multiple pump laser diodes to increase reliability beyond that obtainable from a single pump laser diode. However, as explained in this article, simplistically coupling multiple multimode laser-diode beams through a fiber-optic combiner would entail a significant reduction in coupling efficiency, and lasing would occur at one or more other frequencies in addition to the single desired frequency. To minimize coupling loss, one must ensure that the NA (approximately equal to 0.3) of the combined laser-diode beams is less than the NA of the fiber. The A(Omega) of the laser-diode beam in the slow-axis plane is 1/1.3 as large as that of the fiber. This A(Omega) is small enough to enable efficient coupling of light into the optical fiber, but too large for combining of beams in the slow-axis plane. Therefore, a pair of cylindrical lenses is used to cancel the slow-axis plane magnification introduced by the on-cylindrical lenses used to effect magnification in the fast-axis plane.

Bactericidal effects of a high-power, red light-emitting diode on two periodontopathic bacteria in antimicrobial photodynamic therapy in vitro.

PubMed

Umeda, Makoto; Tsuno, Akiko; Okagami, Yoshihide; Tsuchiya, Fumito; Izumi, Yuichi; Ishikawa, Isao

2011-11-01

  Light-emitting diodes have been investigated as new light activators for photodynamic therapy. We investigated the bactericidal effects of high-power, red light-emitting diodes on two periodontopathic bacteria in vitro.   A light-emitting diode (intensity: 1100 mW/cm(2) , peak wavelength: 650 nm) was used to irradiate a bacterial solution for either 10 or 20 s. Bacterial solutions (Porphyromonas gingivalis or Aggregatibacter actinomycetemcomitans) at a concentration of 2.5 × 10(6) c.f.u./mL were mixed with an equal volume of either methylene blue or toluidine blue O (0-20 μg/mL) and added to titer plate wells. The plate wells were irradiated with red light-emitting diode light from a distance of 22 or 40 mm. The contents were diluted, and 50 μL was smeared onto blood agar plates. After 1 week of culturing, bacterial c.f.u. were counted.   The light-emitting diode energy density was estimated to be approximately 4 and 8 J/cm(2) after 10 and 20 s of irradiation, respectively. Red light-emitting diode irradiation for 10 s from a distance of 22 mm, combined with methylene blue at concentrations >10 μg/mL, completely killed Porphyromonas gingivalis and Aggregatibacter actinomycetemcomitans.   High-power, red light-emitting diode irradiation with a low concentration of dye showed effective bactericidal effects against two periodontopathic bacteria. © 2011 Blackwell Publishing Asia Pty Ltd.

A Monte Carlo and experimental investigation of the dosimetric behavior of low- and medium-perturbation diodes used for entrance in vivo dosimetry in megavoltage photon beams.

PubMed

Mosleh-Shirazi, Mohammad Amin; Karbasi, Sareh; Shahbazi-Gahrouei, Daryoush; Monadi, Shahram

2012-11-08

Full buildup diodes can cause significant dose perturbation if they are used on most or all of radiotherapy fractions. Given the importance of frequent in vivo measurements in complex treatments, using thin buildup (low-perturbation) diodes instead is gathering interest. However, such diodes are strictly unsuitable for high-energy photons; therefore, their use requires evaluation and careful measurement of correction factors (CFs). There is little published data on such factors for low-perturbation diodes, and none on diode characterization for 9 MV X-rays. We report on MCNP4c Monte Carlo models of low-perturbation (EDD5) and medium-perturbation (EDP10) diodes, and a comparison of source-to-surface distance, field size, temperature, and orientation CFs for cobalt-60 and 9 MV beams. Most of the simulation results were within 4% of the measurements. The results suggest against the use of the EDD5 in axial angles beyond ± 50° and exceeding the range 0° to +50° tilt angle at 9 MV. Outside these ranges, although the EDD5 can be used for accurate in vivo dosimetry at 9 MV, its CF variations were found to be 1.5-7.1 times larger than the EDP10 and, therefore, should be applied carefully. Finally, the MCNP diode models are sufficiently reliable tools for independent verification of potentially inaccurate measurements.

Limitations of silicon diodes for clinical electron dosimetry.

PubMed

Song, Haijun; Ahmad, Munir; Deng, Jun; Chen, Zhe; Yue, Ning J; Nath, Ravinder

2006-01-01

This work investigates the relevance of several factors affecting the response of silicon diode dosemeters in depth-dose scans of electron beams. These factors are electron energy, instantaneous dose rate, dose per pulse, photon/electron dose ratio and electron scattering angle (directional response). Data from the literature and our own experiments indicate that the impact of these factors may be up to +/-15%. Thus, the different factors would have to cancel out perfectly at all depths in order to produce true depth-dose curves. There are reports of good agreement between depth-doses measured with diodes and ionisation chambers. However, our measurements with a Scantronix electron field detector (EFD) diode and with a plane-parallel ionisation chamber show discrepancies both in the build-up and in the low-dose regions, with a ratio up to 1.4. Moreover, the absolute sensitivity of two diodes of the same EFD model was found to differ by a factor of 3, and this ratio was not constant but changed with depth between 5 and 15% in the low-dose regions of some clinical electron beams. Owing to these inhomogeneities among diodes even of the same model, corrections for each factor would have to be diode-specific and beam-specific. All these corrections would have to be determined using parallel plane chambers, as recommended by AAPM TG-25, which would be unrealistic in clinical practice. Our conclusion is that in general diodes are not reliable in the measurement of depth-dose curves of clinical electron beams.

The Pierce-diode approximation to the single-emitter plasma diode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ender, A. Ya.; Kuhn, S.; Kuznetsov, V. I.

2006-11-15

The possibility of modeling fast processes in the collisionless single-emitter plasma diode (Knudsen diode with surface ionization, KDSI) by means of the Pierce-diode is studied. The KDSI is of practical importance in that it is an almost exact model of thermionic energy converters (TICs) in the collisionless regime and can also be used to model low-density Q-machines. At high temperatures, the Knudsen TIC comes close to the efficiency of the Carnot cycle and hence is the most promising converter of thermal to electric energy. TICs can be applied as component parts in high-temperature electronics. It is shown that normalizations mustmore » be chosen appropriately in order to compare the plasma characteristics of the two models: the KDSI and the Pierce-diode. A linear eigenmode theory of the KDSI is developed. For both nonlinear time-independent states and linear eigenmodes without electron reflection, excellent agreement is found between the analytical potential distributions for the Pierce-diode and the corresponding numerical ones for the KDSI. For the states with electron reflection, the agreement is satisfactory in a qualitative sense. A full classification of states of both diodes for the regimes with and without electron reflection is presented. The effect of the thermal spread in electron velocities on the potential distributions and the ({epsilon},{eta}) diagrams is analyzed. Generally speaking, the methodology developed is usefully applicable to a variety of systems in which the electrons have beam-like distributions.« less

QUANTITATIVE DETECTION OF ENVIRONMENTALLY IMPORTANT DYES USING DIODE LASER/FIBER-OPTIC RAMAN

EPA Science Inventory

A compact diode laser/fiber-optic Raman spectrometer is used for quantitative detection of environmentally important dyes. This system is based on diode laser excitation at 782 mm, fiber optic probe technology, an imaging spectrometer, and state-of-the-art scientific CCD camera. ...

Transistor biased amplifier minimizes diode discriminator threshold attenuation

NASA Technical Reports Server (NTRS)

Larsen, R. N.

1967-01-01

Transistor biased amplifier has a biased diode discriminator driven by a high impedance /several megohms/ current source, rather than a voltage source with several hundred ohms output impedance. This high impedance input arrangement makes the incremental impedance of the threshold diode negligible relative to the input impedance.

High power diode and solid state lasers

NASA Astrophysics Data System (ADS)

Eichler, H. J.; Fritsche, H.; Lux, O.; Strohmaier, S. G.

2017-01-01

Diode lasers are now basic pump sources of crystal, glass fiber and other solid state lasers. Progress in the performance of all these lasers is related. Examples of recently developed diode pumped lasers and Raman frequency converters are described for applications in materials processing, Lidar and medical surgery.

Contribution of the backstreaming ions to the self-magnetic pinch (SMP) diode current

NASA Astrophysics Data System (ADS)

Mazarakis, Michael G.; Bennett, Nichelle; Cuneo, Michael E.; Fournier, Sean D.; Johnston, Mark D.; Kiefer, Mark L.; Leckbee, Joshua J.; Nielsen, Dan S.; Oliver, Bryan V.; Sceiford, Matthew E.; Simpson, Sean C.; Renk, Timothy J.; Ruiz, Carlos L.; Webb, Timothy J.; Ziska, Derek; Droemer, Darryl W.; Gignac, Raymond E.; Obregon, Robert J.; Wilkins, Frank L.; Welch, Dale R.

2018-04-01

The results presented here were obtained with a self-magnetic pinch (SMP) diode mounted at the front high voltage end of the RITS accelerator. RITS is a Self-Magnetically Insulated Transmission Line (MITL) voltage adder that adds the voltage pulse of six 1.3 MV inductively insulated cavities. The RITS driver together with the SMP diode has produced x-ray spots of the order of 1 mm in diameter and doses adequate for the radiographic imaging of high area density objects. Although, through the years, a number of different types of radiographic electron diodes have been utilized with SABER, HERMES III and RITS accelerators, the SMP diode appears to be the most successful and simplest diode for the radiographic investigation of various objects. Our experiments had two objectives: first to measure the contribution of the back-streaming ion currents emitted from the anode target and second to try to evaluate the energy of those ions and hence the Anode-Cathode (A-K) gap actual voltage. In any very high voltage inductive voltage adder utilizing MITLs to transmit the power to the diode load, the precise knowledge of the accelerating voltage applied on the A-K gap is problematic. This is even more difficult in an SMP diode where the A-K gap is very small (˜1 cm) and the diode region very hostile. The accelerating voltage quoted in the literature is from estimates based on the measurements of the anode and cathode currents of the MITL far upstream from the diode and utilizing the para-potential flow theories and inductive corrections. Thus, it would be interesting to have another independent measurement to evaluate the A-K voltage. The diode's anode is made of a number of high-Z metals in order to produce copious and energetic flash x-rays. It was established experimentally that the back-streaming ion currents are a strong function of the anode materials and their stage of cleanness. We have measured the back-streaming ion currents emitted from the anode and propagating through a hollow cathode tip for various diode configurations and different techniques of target cleaning treatment: namely, heating at very high temperatures with DC and pulsed current, with RF plasma cleaning, and with both plasma cleaning and heating. We have also evaluated the A-K gap voltage by energy filtering technique. Experimental results in comparison with LSP simulations are presented.

Diode laser-induced tissue effects: in vitro tissue model study and in vivo evaluation of wound healing following non-contact application.

PubMed

Havel, Miriam; Betz, Christian S; Leunig, Andreas; Sroka, Ronald

2014-08-01

The basic difference between the various common medical laser systems is the wavelength of the emitted light, leading to altered light-tissue interactions due to the optical parameters of the tissue. This study examines laser induced tissue effects in an in vitro tissue model using 1,470 nm diode laser compared to our standard practice for endonasal applications (940 nm diode laser) under standardised and reproducible conditions. Additionally, in vivo induced tissue effects following non-contact application with focus on mucosal healing were investigated in a controlled intra-individual design in patients treated for hypertrophy of nasal turbinate. A certified diode laser system emitting the light of λ = 1470 nm was evaluated with regards to its tissue effects (ablation, coagulation) in an in vitro setup on porcine liver and turkey muscle tissue model. To achieve comparable macroscopic tissue effects the laser fibres (600 µm core diameter) were fixed to a computer controlled stepper motor and the laser light was applied in a reproducible procedure under constant conditions. For the in vivo evaluation, 20 patients with nasal obstruction due to hyperplasia of inferior nasal turbinates were included in this prospective randomised double-blinded comparative trial. The endoscopic controlled endonasal application of λ = 1470 nm on the one and λ = 940 nm on the other side, both in 'non-contact' mode, was carried out as an outpatient procedure under local anaesthesia. The postoperative wound healing process (mucosal swelling, scab formation, bleeding, infection) was endoscopically documented and assessed by an independent physician. In the experimental setup, the 1,470 nm laser diode system proved to be efficient in inducing tissue effects in non-contact mode with a reduced energy factor of 5-10 for highly perfused liver tissue to 10-20 for muscle tissue as compared to the 940 nm diode laser system. In the in vivo evaluation scab formation following laser surgery as assessed clinically on endonasal endoscopy was significantly reduced on 1,470 nm treated site compared to 940 nm diode laser treated site. Diode laser system (1,470 nm) induces efficient tissue effects compared to 940 nm diode laser system as shown in the tissue model experiment. From the clinical point of view, the healing process following non-contact diode laser application revealed to be improved using 1,470 nm diode laser compared to our standard diode laser practise with 940 nm. © 2014 Wiley Periodicals, Inc.

Cylindrical microlens with an internally reflecting surface and a method of fabrication

DOEpatents

Beach, Raymond J.; Freitas, Barry L.

2004-03-23

A fast (high numerical aperture) cylindrical microlens, which includes an internally reflective surface, that functions to deviate the direction of the light that enters the lens from its original propagation direction is employed in optically conditioning laser diodes, laser diode arrays and laser diode bars.

A Cylindrical Microlens With An Internally Reflective Surface And A Method Of Fabrication

DOEpatents

Beach, Raymond J.; Freitas, Barry L.

2005-09-27

A fast (high numerical aperture) cylindrical microlens, which includes an internally reflective surface, that functions to deviate the direction of the light that enters the lens from its original propagation direction is employed in optically conditioning laser diodes, laser diode arrays and laser diode bars.

Demonstrating the Light-Emitting Diode.

ERIC Educational Resources Information Center

Johnson, David A.

1995-01-01

Describes a simple inexpensive circuit which can be used to quickly demonstrate the basic function and versatility of the solid state diode. Can be used to demonstrate the light-emitting diode (LED) as a light emitter, temperature sensor, light detector with both a linear and logarithmic response, and charge storage device. (JRH)

77 FR 75446 - Certain Light-Emitting Diodes and Products Containing the Same; Commission Determination To Grant...

Federal Register 2010, 2011, 2012, 2013, 2014

2012-12-20

... INTERNATIONAL TRADE COMMISSION [Investigation No. 337-TA-784] Certain Light-Emitting Diodes and Products Containing the Same; Commission Determination To Grant the Joint Motion To Terminate the... sale within the United States after importation of certain light-emitting diodes and products...