Diode Laser Application in Soft Tissue Oral Surgery

PubMed Central

Azma, Ehsan; Safavi, Nassimeh

2013-01-01

Introduction: Diode laser with wavelengths ranging from 810 to 980 nm in a continuous or pulsed mode was used as a possible instrument for soft tissue surgery in the oral cavity. Discussion: Diode laser is one of laser systems in which photons are produced by electric current with wavelengths of 810, 940 and 980nm. The application of diode laser in soft tissue oral surgery has been evaluated from a safety point of view, for facial pigmentation and vascular lesions and in oral surgery excision; for example frenectomy, epulis fissuratum and fibroma. The advantages of laser application are that it provides relatively bloodless surgical and post surgical courses with minimal swelling and scarring. We used diode laser for excisional biopsy of pyogenic granuloma and gingival pigmentation. Conclusion: The diode laser can be used as a modality for oral soft tissue surgery PMID:25606331

Fabrication and optimization of a whiskerless Schottky barrier diode for submillimeter wave applications

NASA Technical Reports Server (NTRS)

Bishop, W.; Mattauch, R. J.

1990-01-01

The following accomplishments were made towards the goal of an optimized whiskerless diode chip for submillimeter wavelength applications. (1) Surface channel whiskerless diode structure was developed which offers excellent DC and RF characteristics, reduced shunt capacitance and simplified fabrication compared to mesa and proton isolated structures. (2) Reliable fabrication technology was developed for the surface channel structure. The new anode plating technology is a major improvement. (3) DC and RF characterization of the surface channel diode was compared with whisker contacted diodes. This data indicates electrical performance as good as the best reported for similar whisker contacted devices. (4) Additional batches of surface channel diodes were fabricated with excellent I-V and reduced shunt capacitance. (5) Large scale capacitance modelinng was done for the planar diode structure. This work revealed the importance of removing the substrate gallium arsenide for absolute minimum pad capacitance. (6) A surface channel diode was developed on quartz substrate and this substrate was completely removed after diode mounting for minimum parasitic capacitance. This work continues with the goal of producing excellent quality submillimeter wavelength planar diodes which satisfy the requirements of easy handling and robustness. These devices will allow the routine implementation of Schottky receivers into space-based applications at frequencies as high as 1 THz, and, in the future, beyond.

AlGaInN laser diode technology and systems for defence and security applications

NASA Astrophysics Data System (ADS)

Najda, Stephen P.; Perlin, Piotr; Suski, Tadek; Marona, Lucja; Boćkowski, Mike; Leszczyński, Mike; Wisniewski, Przemek; Czernecki, Robert; Kucharski, Robert; Targowski, Grzegorz; Watson, Scott; Kelly, Antony E.

2015-05-01

The latest developments in AlGaInN laser diode technology are reviewed for defence and security applications such as underwater communications. The AlGaInN material system allows for laser diodes to be fabricated over a very wide range of wavelengths from u.v., ~380nm, to the visible ~530nm, by tuning the indium content of the laser GaInN quantum well. Thus AlGaInN laser diode technology is a key enabler for the development of new disruptive system level applications in displays, telecom, defence and other industries.

Diode lasers: From laboratory to industry

NASA Astrophysics Data System (ADS)

Nasim, Hira; Jamil, Yasir

2014-03-01

The invention of first laser in 1960 triggered the discovery of several new families of lasers. A rich interplay of different lasing materials resulted in a far better understanding of the phenomena particularly linked with atomic and molecular spectroscopy. Diode lasers have gone through tremendous developments on the forefront of applied physics that have shown novel ways to the researchers. Some interesting attributes of the diode lasers like cost effectiveness, miniature size, high reliability and relative simplicity of use make them good candidates for utilization in various practical applications. Diode lasers are being used by a variety of professionals and in several spectroscopic techniques covering many areas of pure and applied sciences. Diode lasers have revolutionized many fields like optical communication industry, medical science, trace gas monitoring, studies related to biology, analytical chemistry including elemental analysis, war fare studies etc. In this paper the diode laser based technologies and measurement techniques ranging from laboratory research to automated field and industry have been reviewed. The application specific developments of diode lasers and various methods of their utilization particularly during the last decade are discussed comprehensively. A detailed snapshot of the current state of the art diode laser applications is given along with a detailed discussion on the upcoming challenges.

Diode Lasers used in Plastic Welding and Selective Laser Soldering - Applications and Products

NASA Astrophysics Data System (ADS)

Reinl, S.

Aside from conventional welding methods, laser welding of plastics has established itself as a proven bonding method. The component-conserving and clean process offers numerous advantages and enables welding of sensitive assemblies in automotive, electronic, medical, human care, food packaging and consumer electronics markets. Diode lasers are established since years within plastic welding applications. Also, soft soldering using laser radiation is becoming more and more significant in the field of direct diode laser applications. Fast power controllability combined with a contactless temperature measurement to minimize thermal damage make the diode laser an ideal tool for this application. These advantages come in to full effect when soldering of increasingly small parts in temperature sensitive environments is necessary.

UV emissions from low energy artificial light sources.

PubMed

Fenton, Leona; Moseley, Harry

2014-01-01

Energy efficient light sources have been introduced across Europe and many other countries world wide. The most common of these is the Compact Fluorescent Lamp (CFL), which has been shown to emit ultraviolet (UV) radiation. Light Emitting Diodes (LEDs) are an alternative technology that has minimal UV emissions. This brief review summarises the different energy efficient light sources available on the market and compares the UV levels and the subsequent effects on the skin of normal individuals and those who suffer from photodermatoses. © 2013 John Wiley & Sons A/S. Published by John Wiley & Sons Ltd.

Noise and loss in balanced and subharmonically pumped mixers. I - Theory. II - Application

NASA Technical Reports Server (NTRS)

Kerr, A. R.

1979-01-01

The theory of noise and frequency conversion for two-diode balanced and subharmonically pumped mixers is presented. The analysis is based on the equivalent circuit of the Schottky diode, having nonlinear capacitance, series resistance, and shot and thermal noise. Expressions for the conversion loss, noise temperature, and input and output impedances are determined in a form suitable for numerical analysis. In Part II, the application of the theory to practical mixers is demonstrated, and the properties of some two-diode mixers are examined. The subharmonically pumped mixer is found to be much more strongly affected by the loop inductance than the balanced mixer, and the ideal two-diode mixer using exponential diodes has a multiport noise-equivalent network (attenuator) similar to that of the ideal single-diode mixer. It is concluded that the theory can be extended to mixers with more than two diodes and will be useful for their design and analysis, provided a suitable nonlinear analysis is available to determine the diode waveforms.

Diode pumped solid-state laser oscillators for spectroscopic applications

NASA Technical Reports Server (NTRS)

Byer, R. L.; Basu, S.; Fan, T. Y.; Kozlovsky, W. J.; Nabors, C. D.; Nilsson, A.; Huber, G.

1987-01-01

The rapid improvement in diode laser pump sources has led to the recent progress in diode laser pumped solid state lasers. To date, electrical efficiencies of greater than 10 percent were demonstrated. As diode laser costs decrease with increased production volume, diode laser and diode laser array pumped solid state lasers will replace the traditional flashlamp pumped Nd:YAG laser sources. The use of laser diode array pumping of slab geometry lasers will allow efficient, high peak and average power solid state laser sources to be developed. Perhaps the greatest impact of diode laser pumped solid state lasers will be in spectroscopic applications of miniature, monolithic devices. Single-stripe diode-pumped operation of a continuous-wave 946 nm Nd:YAG laser with less than 10 m/w threshold was demonstrated. A slope efficiency of 16 percent near threshold was shown with a projected slope efficiency well above a threshold of 34 percent based on results under Rhodamine 6G dye-laser pumping. Nonlinear crystals for second-harmonic generation of this source were evaluated. The KNbO3 and periodically poled LiNbO3 appear to be the most promising.

Research and Development of Laser Diode Based Instruments for Applications in Space

NASA Technical Reports Server (NTRS)

Krainak, Michael; Abshire, James; Cornwell, Donald; Dragic, Peter; Duerksen, Gary; Switzer, Gregg

1999-01-01

Laser diode technology continues to advance at a very rapid rate due to commercial applications such as telecommunications and data storage. The advantages of laser diodes include, wide diversity of wavelengths, high efficiency, small size and weight and high reliability. Semiconductor and fiber optical-amplifiers permit efficient, high power master oscillator power amplifier (MOPA) transmitter systems. Laser diode systems which incorporate monolithic or discrete (fiber optic) gratings permit single frequency operation. We describe experimental and theoretical results of laser diode based instruments currently under development at NASA Goddard Space Flight Center including miniature lidars for measuring clouds and aerosols, water vapor and wind for Earth and planetary (Mars Lander) use.

Low Temperature Thermometry Using Inexpensive Silicon Diodes.

ERIC Educational Resources Information Center

Waltham, N. R.; And Others

1981-01-01

Describes the use of silicon diodes for low temperature thermometry in the teaching laboratory. A simple and inexpensive circuit for display of the diode forward voltage under constant current conditions is described, and its application in the evaluation of low cost silicon diodes as low temperature thermometers is presented. (SK)

AlGaInN laser diode technology for systems applications

NASA Astrophysics Data System (ADS)

Najda, S. P.; Perlin, P.; Suski, T.; Marona, L.; Bockowski, M.; Leszczyński, M.; Wisniewski, P.; Czernecki, R.; Kucharski, R.; Targowski, G.; Watson, S.; Kelly, A. E.

2016-02-01

Gallium Nitride (GaN) laser diodes fabricated from the AlGaInN material system is an emerging technology that allows laser diodes to be fabricated over a very wide wavelength range from u.v. to the visible, and is a key enabler for the development of new system applications such as (underwater and terrestrial) telecommunications, quantum technologies, display sources and medical instrumentation.

Thin planar package for cooling an array of edge-emitting laser diodes

DOEpatents

Mundinger, David C.; Benett, William J.

1992-01-01

A laser diode array is disclosed that includes a plurality of planar assemblies and active cooling of each assembly. The laser diode array may be operated in a long duty cycle, or in continuous operation. A laser diode bar and a microchannel heat sink are thermally coupled in a compact, thin planar assembly having the laser diode bar located proximate to one edge. In an array, a number of such thin planar assemblies are secured together in a stacked configuration, in close proximity so that the laser diodes are spaced closely. The cooling means includes a microchannel heat sink proximate to the laser diode bar to absorb heat generated by laser operation. To provide the coolant to the microchannels, each thin planar assembly comprises passageways that connect the microchannels to inlet and outlet corridors. Each inlet passageway may comprise a narrow slot that directs coolant into the microchannels and increases the velocity of flow therethrough. The corridors comprises holes extending through each of the assemblies in the array. The inlet and outlet corridors are connected to a conventional coolant circulation system. The laser diode array with active cooling has applications as an optical pump for high power solid state lasers, or by mating the diodes with fiber optic lenses. Further, the arrays can be useful in applications having space constraints and energy limitations, and in military and space applications. The arrays can be incorporated in equipment such as communications devices and active sensors.

High temperature semiconductor diode laser pumps for high energy laser applications

NASA Astrophysics Data System (ADS)

Campbell, Jenna; Semenic, Tadej; Guinn, Keith; Leisher, Paul O.; Bhunia, Avijit; Mashanovitch, Milan; Renner, Daniel

2018-02-01

Existing thermal management technologies for diode laser pumps place a significant load on the size, weight and power consumption of High Power Solid State and Fiber Laser systems, thus making current laser systems very large, heavy, and inefficient in many important practical applications. To mitigate this thermal management burden, it is desirable for diode pumps to operate efficiently at high heat sink temperatures. In this work, we have developed a scalable cooling architecture, based on jet-impingement technology with industrial coolant, for efficient cooling of diode laser bars. We have demonstrated 60% electrical-to-optical efficiency from a 9xx nm two-bar laser stack operating with propylene-glycolwater coolant, at 50 °C coolant temperature. To our knowledge, this is the highest efficiency achieved from a diode stack using 50 °C industrial fluid coolant. The output power is greater than 100 W per bar. Stacks with additional laser bars are currently in development, as this cooler architecture is scalable to a 1 kW system. This work will enable compact and robust fiber-coupled diode pump modules for high energy laser applications.

Graphene-based vertical-junction diodes and applications

NASA Astrophysics Data System (ADS)

Choi, Suk-Ho

2017-09-01

In the last decade, graphene has received extreme attention as an intriguing building block for electronic and photonic device applications. This paper provides an overview of recent progress in the study of vertical-junction diodes based on graphene and its hybrid systems by combination of graphene and other materials. The review is especially focused on tunnelling and Schottky diodes produced by chemical doping of graphene or combination of graphene with various semiconducting/ insulating materials such as hexagonal boron nitrides, Si-quantum-dots-embedded SiO2 multilayers, Si wafers, compound semiconductors, Si nanowires, and porous Si. The uniqueness of graphene enables the application of these convergence structures in high-efficient devices including photodetectors, solar cells, resonant tunnelling diodes, and molecular/DNA sensors.

InGaAs/InP heteroepitaxial Schottky barrier diodes for terahertz applications

NASA Technical Reports Server (NTRS)

Bhapkar, Udayan V.; Li, Yongjun; Mattauch, Robert J.

1992-01-01

This paper explores the feasibility of planar, sub-harmonically pumped, anti-parallel InGaAs/InP heteroepitaxial Schottky diodes for terahertz applications. We present calculations of the (I-V) characteristics of such diodes using a numerical model that considers tunneling. We also present noise and conversion loss predictions of diode mixers operated at 500 GHz, and obtained from a multi-port mixer analysis, using the I-V characteristics predicted by our model. Our calculations indicate that InGaAs/InP heteroepitaxial Schottky barrier diodes are expected to have an I-V characteristic with an ideality factor comparable to that of GaAs Schottky diodes. However, the reverse saturation current of InGaAs/InP diodes is expected to be much greater than that of GaAs diodes. These predictions are confirmed by experiment. The mixer analyses predict that sub-harmonically pumped anti-parallel InGaAs/InP diode mixers are expected to offer a 2 dB greater conversion loss and a somewhat higher single sideband noise temperature than their GaAs counterparts. More importantly, the InGaAs/InP devices are predicted to require only one-tenth of the local oscillator power required by similar GaAs diodes.

Teradiode's high brightness semiconductor lasers

NASA Astrophysics Data System (ADS)

Huang, Robin K.; Chann, Bien; Burgess, James; Lochman, Bryan; Zhou, Wang; Cruz, Mike; Cook, Rob; Dugmore, Dan; Shattuck, Jeff; Tayebati, Parviz

2016-03-01

TeraDiode is manufacturing multi-kW-class ultra-high brightness fiber-coupled direct diode lasers for industrial applications. A fiber-coupled direct diode laser with a power level of 4,680 W from a 100 μm core diameter, <0.08 numerical aperture (NA) output fiber at a single center wavelength was demonstrated. Our TeraBlade industrial platform achieves world-record brightness levels for direct diode lasers. The fiber-coupled output corresponds to a Beam Parameter Product (BPP) of 3.5 mm-mrad and is the lowest BPP multi-kW-class direct diode laser yet reported. This laser is suitable for industrial materials processing applications, including sheet metal cutting and welding. This 4-kW fiber-coupled direct diode laser has comparable brightness to that of industrial fiber lasers and CO2 lasers, and is over 10x brighter than state-of-the-art direct diode lasers. We have also demonstrated novel high peak power lasers and high brightness Mid-Infrared Lasers.

Diode laser-induced tissue effects: in vitro tissue model study and in vivo evaluation of wound healing following non-contact application.

PubMed

Havel, Miriam; Betz, Christian S; Leunig, Andreas; Sroka, Ronald

2014-08-01

The basic difference between the various common medical laser systems is the wavelength of the emitted light, leading to altered light-tissue interactions due to the optical parameters of the tissue. This study examines laser induced tissue effects in an in vitro tissue model using 1,470 nm diode laser compared to our standard practice for endonasal applications (940 nm diode laser) under standardised and reproducible conditions. Additionally, in vivo induced tissue effects following non-contact application with focus on mucosal healing were investigated in a controlled intra-individual design in patients treated for hypertrophy of nasal turbinate. A certified diode laser system emitting the light of λ = 1470 nm was evaluated with regards to its tissue effects (ablation, coagulation) in an in vitro setup on porcine liver and turkey muscle tissue model. To achieve comparable macroscopic tissue effects the laser fibres (600 µm core diameter) were fixed to a computer controlled stepper motor and the laser light was applied in a reproducible procedure under constant conditions. For the in vivo evaluation, 20 patients with nasal obstruction due to hyperplasia of inferior nasal turbinates were included in this prospective randomised double-blinded comparative trial. The endoscopic controlled endonasal application of λ = 1470 nm on the one and λ = 940 nm on the other side, both in 'non-contact' mode, was carried out as an outpatient procedure under local anaesthesia. The postoperative wound healing process (mucosal swelling, scab formation, bleeding, infection) was endoscopically documented and assessed by an independent physician. In the experimental setup, the 1,470 nm laser diode system proved to be efficient in inducing tissue effects in non-contact mode with a reduced energy factor of 5-10 for highly perfused liver tissue to 10-20 for muscle tissue as compared to the 940 nm diode laser system. In the in vivo evaluation scab formation following laser surgery as assessed clinically on endonasal endoscopy was significantly reduced on 1,470 nm treated site compared to 940 nm diode laser treated site. Diode laser system (1,470 nm) induces efficient tissue effects compared to 940 nm diode laser system as shown in the tissue model experiment. From the clinical point of view, the healing process following non-contact diode laser application revealed to be improved using 1,470 nm diode laser compared to our standard diode laser practise with 940 nm. © 2014 Wiley Periodicals, Inc.

Fabrication and Characterisation of GaAs Gunn Diode Chips for Applications at 77 GHz in Automotive Industry

PubMed Central

Förster, Arno; Stock, Jürgen; Montanari, Simone; Lepsa, Mihail Ion; Lüth, Hans

2006-01-01

GaAs-based Gunn diodes with graded AlGaAs hot electron injector heterostructures have been developed under the special needs in automotive applications. The fabrication of the Gunn diode chips was based on total substrate removal and processing of integrated Au heat sinks. Especially, the thermal and RF behavior of the diodes have been analyzed by DC, impedance and S-parameter measurements. The electrical investigations have revealed the functionality of the hot electron injector. An optimized layer structure could fulfill the requirements in adaptive cruise control (ACC) systems at 77 GHz with typical output power between 50 and 90 mW.

Periodontal and peri-implant wound healing following laser therapy.

PubMed

Aoki, Akira; Mizutani, Koji; Schwarz, Frank; Sculean, Anton; Yukna, Raymond A; Takasaki, Aristeo A; Romanos, Georgios E; Taniguchi, Yoichi; Sasaki, Katia M; Zeredo, Jorge L; Koshy, Geena; Coluzzi, Donald J; White, Joel M; Abiko, Yoshimitsu; Ishikawa, Isao; Izumi, Yuichi

2015-06-01

Laser irradiation has numerous favorable characteristics, such as ablation or vaporization, hemostasis, biostimulation (photobiomodulation) and microbial inhibition and destruction, which induce various beneficial therapeutic effects and biological responses. Therefore, the use of lasers is considered effective and suitable for treating a variety of inflammatory and infectious oral conditions. The CO2 , neodymium-doped yttrium-aluminium-garnet (Nd:YAG) and diode lasers have mainly been used for periodontal soft-tissue management. With development of the erbium-doped yttrium-aluminium-garnet (Er:YAG) and erbium, chromium-doped yttrium-scandium-gallium-garnet (Er,Cr:YSGG) lasers, which can be applied not only on soft tissues but also on dental hard tissues, the application of lasers dramatically expanded from periodontal soft-tissue management to hard-tissue treatment. Currently, various periodontal tissues (such as gingiva, tooth roots and bone tissue), as well as titanium implant surfaces, can be treated with lasers, and a variety of dental laser systems are being employed for the management of periodontal and peri-implant diseases. In periodontics, mechanical therapy has conventionally been the mainstream of treatment; however, complete bacterial eradication and/or optimal wound healing may not be necessarily achieved with conventional mechanical therapy alone. Consequently, in addition to chemotherapy consisting of antibiotics and anti-inflammatory agents, phototherapy using lasers and light-emitting diodes has been gradually integrated with mechanical therapy to enhance subsequent wound healing by achieving thorough debridement, decontamination and tissue stimulation. With increasing evidence of benefits, therapies with low- and high-level lasers play an important role in wound healing/tissue regeneration in the treatment of periodontal and peri-implant diseases. This article discusses the outcomes of laser therapy in soft-tissue management, periodontal nonsurgical and surgical treatment, osseous surgery and peri-implant treatment, focusing on postoperative wound healing of periodontal and peri-implant tissues, based on scientific evidence from currently available basic and clinical studies, as well as on case reports. © 2015 John Wiley & Sons A/S. Published by John Wiley & Sons Ltd.

Modular package for cooling a laser diode array

DOEpatents

Mundinger, David C.; Benett, William J.; Beach, Raymond J.

1992-01-01

A laser diode array is disclosed that includes a plurality of planar packages and active cooling. The laser diode array may be operated in a long duty cycle, or in continuous operation. A laser diode bar and a microchannel heat sink are thermally coupled in a compact, thin planar package having the laser diode bar located proximate to one edge. In an array, a number of such thin planar packages are secured together in a stacked configuration, in close proximity so that the laser diodes are spaced closely. The cooling means includes a microchannel heat sink that is attached proximate to the laser bar so that it absorbs heat generated by laser operation. To provide the coolant to the microchannels, each thin planar package comprises a thin inlet manifold and a thin outlet manifold connected to an inlet corridor and an outlet corridor. The inlet corridor comprises a hole extending through each of the packages in the array, and the outlet corridor comprises a hole extending through each of the packages in the array. The inlet and outlet corridors are connected to a conventional coolant circulation system. The laser diode array with active cooling has application as an optical pump for high power solid state lasers. Further, it can be incorporated in equipment such as communications devices and active sensors, and in military and space applications, and it can be useful in applications having space constraints and energy limitations.

Laterally stacked Schottky diodes for infrared sensor applications

NASA Technical Reports Server (NTRS)

Lin, True-Lon (Inventor)

1991-01-01

Laterally stacked Schottky diodes for infrared sensor applications are fabricated utilizing porous silicon having pores. A Schottky metal contract is formed in the pores, such as by electroplating. The sensors may be integrated with silicon circuits on the same chip with a high quantum efficiency, which is ideal for IR focal plane array applications due to uniformity and reproducibility.

Novel diode laser-based sensors for gas sensing applications

NASA Technical Reports Server (NTRS)

Tittel, F. K.; Lancaster, D. G.; Richter, D.

2000-01-01

The development of compact spectroscopic gas sensors and their applications to environmental sensing will be described. These sensors employ mid-infrared difference-frequency generation (DFG) in periodically poled lithium niobate (PPLN) crystals pumped by two single-frequency solid state lasers such as diode lasers, diode-pumped solid state, and fiber lasers. Ultrasensitive, highly selective, and real-time measurements of several important atmospheric trace gases, including carbon monoxide, nitrous oxide, carbon dioxide, formaldehyde [correction of formaldehye], and methane, have been demonstrated.

Advances in single mode and high power AlGaInN laser diode technology for systems applications

NASA Astrophysics Data System (ADS)

Najda, Stephen P.; Perlin, Piotr; Suski, Tadek; Marona, Lujca; Boćkowski, Michal; Leszczyński, Mike; Wisniewski, Przemek; Czernecki, Robert; Kucharski, Robert; Targowski, Grzegorz; Smalc-Koziorowska, Julita; Stanczyk, Szymon; Watson, Scott; Kelly, Antony E.

2015-03-01

The AlGaInN material system allows for laser diodes to be fabricated over a very wide range of wavelengths from u.v., ~380nm, to the visible ~530nm, by tuning the indium content of the laser GaInN quantum well. Thus AlGaInN laser diode technology is a key enabler for the development of new disruptive system level applications in displays, telecom, defence and other industries.

AlGaInN laser diode technology for free-space telecom applications

NASA Astrophysics Data System (ADS)

Najda, S. P.; Perlin, P.; Suski, T.; Marona, L.; Boćkowski, M.; Leszczyński, M.; Wisniewski, P.; Czernecki, R.; Kucharski, R.; Targowski, G.; Watson, S.; Kelly, A. E.; Watson, M. A.; Blanchard, P.; White, H.

2015-03-01

The AlGaInN material system allows for laser diodes to be fabricated over a very wide range of wavelengths from u.v., ~380nm, to the visible ~530nm, by tuning the indium content of the laser GaInN quantum well. We consider the suitability of AlGaInN laser diode technology for free space laser communication, both airborne links and underwater telecom applications, mainly for defense and oil and gas industries.

Bypass diode integration

NASA Technical Reports Server (NTRS)

Shepard, N. F., Jr.

1981-01-01

Protective bypass diodes and mounting configurations which are applicable for use with photovoltaic modules having power dissipation requirements in the 5 to 50 watt range were investigated. Using PN silicon and Schottky diode characterization data on packaged diodes and diode chips, typical diodes were selected as representative for each range of current carrying capacity, an appropriate heat dissipating mounting concept along with its environmental enclosure was defined, and a thermal analysis relating junction temperature as a function of power dissipation was performed. In addition, the heat dissipating mounting device dimensions were varied to determine the effect on junction temperature. The results of the analysis are presented as a set of curves indicating junction temperature as a function of power dissipation for each diode package.

High power diode and solid state lasers

NASA Astrophysics Data System (ADS)

Eichler, H. J.; Fritsche, H.; Lux, O.; Strohmaier, S. G.

2017-01-01

Diode lasers are now basic pump sources of crystal, glass fiber and other solid state lasers. Progress in the performance of all these lasers is related. Examples of recently developed diode pumped lasers and Raman frequency converters are described for applications in materials processing, Lidar and medical surgery.

Advancements in high-power high-brightness laser bars and single emitters for pumping and direct diode application

NASA Astrophysics Data System (ADS)

An, Haiyan; Jiang, Ching-Long J.; Xiong, Yihan; Zhang, Qiang; Inyang, Aloysius; Felder, Jason; Lewin, Alexander; Roff, Robert; Heinemann, Stefan; Schmidt, Berthold; Treusch, Georg

2015-03-01

We have continuously optimized high fill factor bar and packaging design to increase power and efficiency for thin disc laser system pump application. On the other hand, low fill factor bars packaged on the same direct copper bonded (DCB) cooling platform are used to build multi-kilowatt direct diode laser systems. We have also optimized the single emitter designs for fiber laser pump applications. In this paper, we will give an overview of our recent advances in high power high brightness laser bars and single emitters for pumping and direct diode application. We will present 300W bar development results for our next generation thin disk laser pump source. We will also show recent improvements on slow axis beam quality of low fill factor bar and its application on performance improvement of 4-5 kW TruDiode laser system with BPP of 30 mm*mrad from a 600 μm fiber. Performance and reliability results of single emitter for multiemitter fiber laser pump source will be presented as well.

Fabrication and Characterization of ZnO Langmuir-Blodgett Film and Its Use in Metal-Insulator-Metal Tunnel Diode.

PubMed

Azad, Ibrahim; Ram, Manoj K; Goswami, D Yogi; Stefanakos, Elias

2016-08-23

Metal-insulator-metal tunnel diodes have great potential for use in infrared detection and energy harvesting applications. The quantum based tunneling mechanism of electrons in MIM (metal-insulator-metal) or MIIM (metal-insulator-insulator-metal) diodes can facilitate rectification at THz frequencies. In this study, the required nanometer thin insulating layer (I) in the MIM diode structure was fabricated using the Langmuir-Blodgett technique. The zinc stearate LB film was deposited on Au/Cr coated quartz, FTO, and silicon substrates, and then heat treated by varying the temperature from 100 to 550 °C to obtain nanometer thin ZnO layers. The thin films were characterized by XRD, AFM, FTIR, and cyclic voltammetry methods. The final MIM structure was fabricated by depositing chromium/nickel over the ZnO on Au/Cr film. The current voltage (I-V) characteristics of the diode showed that the conduction mechanism is electron tunneling through the thin insulating layer. The sensitivity of the diodes was as high as 32 V(-1). The diode resistance was ∼80 Ω (at a bias voltage of 0.78 V), and the rectification ratio at that bias point was about 12 (for a voltage swing of ±200 mV). The diode response exhibited significant nonlinearity and high asymmetry at the bias point, very desirable diode performance parameters for IR detection applications.

Effect of surgical periodontal treatment associated to antimicrobial photodynamic therapy on chronic periodontitis: A randomized controlled clinical trial.

PubMed

Martins, Sérgio H L; Novaes, Arthur B; Taba, Mario; Palioto, Daniela B; Messora, Michel R; Reino, Danilo M; Souza, Sérgio L S

2017-07-01

This randomized controlled clinical trial evaluated the effects of an adjunctive single application of antimicrobial photodynamic therapy (aPDT) in Surgical Periodontal Treatment (ST) in patients with severe chronic periodontitis (SCP). In a split-mouth design, 20 patients with SCP were treated with aPDT+ST (Test Group, TG) or ST only (Control Group, CG). aPDT was applied in a single episode, using a diode laser and a phenothiazine photosensitizer. All patients were monitored until 90 days after surgical therapy. Levels of 40 subgingival species were measured by checkerboard DNA-DNA hybridization at baseline, 60 and 150 days. Clinical and microbiological parameters were evaluated. In deep periodontal pockets depth (PPD ≥5 mm), Test Group presented a significantly higher decrease in PPD than Control Group at 90 days after surgical therapy (p < .05). Test Group also demonstrated significantly less periodontal pathogens of red complex (Treponema denticola) (p < .05). A single episode of aPDT used in adjunct to open flap debridement of the root surface in the surgical treatment of SCP: i) significantly improved clinical periodontal parameters; ii) eliminates periodontal pathogens of the red complex more effectively (NCT02734784). © 2017 John Wiley & Sons A/S. Published by John Wiley & Sons Ltd.

Synthesis and luminescence properties of blue-emitting phosphor Ca12 Al14 O32 F2 :Eu2+ for white light-emitting diode.

PubMed

Chen, Wanping; Zhang, Xinzhu; Wang, Liping

2017-09-01

A blue-emitting phosphor Ca 12 Al 14 O 32 F 2 :Eu 2+ was synthesized using a high-temperature solid-state reaction under a reductive atmosphere. The X-ray diffraction measurements indicate that a pure phase Ca 12 Al 14 O 32 F 2 :Eu 2+ can be obtained for low doping concentration of Eu 2+ . The phosphor has a strong absorption in the range 270-420 nm with a maximum at ~340 nm and blue emission in the range 400-500 nm with chromatic coordination of (0.152, 0.045). The optimal doping concentration is ~0.24. In addition, the luminescence properties of the as-synthesized phosphor were evaluated by comparison with those of Ca 12 Al 14 O 32 Cl 2 :Eu 2+ and the commercially available phosphor BaMgAl 10 O 17 :Eu 2+ . The emission intensity of Ca 12 Al 14 O 32 F 2 :Eu 2+ was ~72% that of BaMgAl 10 O 17 :Eu 2+ under excitation at λ = 375 nm. The results indicate that Ca 12 Al 14 O 32 F 2 :Eu 2+ has potential application as a near-UV-convertible blue phosphor for white light-emitting diodes. Copyright © 2017 John Wiley & Sons, Ltd.

Highly-reliable laser diodes and modules for spaceborne applications

NASA Astrophysics Data System (ADS)

Deichsel, E.

2017-11-01

Laser applications become more and more interesting in contemporary missions such as earth observations or optical communication in space. One of these applications is light detection and ranging (LIDAR), which comprises huge scientific potential in future missions. The Nd:YAG solid-state laser of such a LIDAR system is optically pumped using 808nm emitting pump sources based on semiconductor laser-diodes in quasi-continuous wave (qcw) operation. Therefore reliable and efficient laser diodes with increased output powers are an important requirement for a spaceborne LIDAR-system. In the past, many tests were performed regarding the performance and life-time of such laser-diodes. There were also studies for spaceborne applications, but a test with long operation times at high powers and statistical relevance is pending. Other applications, such as science packages (e.g. Raman-spectroscopy) on planetary rovers require also reliable high-power light sources. Typically fiber-coupled laser diode modules are used for such applications. Besides high reliability and life-time, designs compatible to the harsh environmental conditions must be taken in account. Mechanical loads, such as shock or strong vibration are expected due to take-off or landing procedures. Many temperature cycles with high change rates and differences must be taken in account due to sun-shadow effects in planetary orbits. Cosmic radiation has strong impact on optical components and must also be taken in account. Last, a hermetic sealing must be considered, since vacuum can have disadvantageous effects on optoelectronics components.

Plasma vapor deposited n-indium tin oxide/p-copper indium oxide heterojunctions for optoelectronic device applications

NASA Astrophysics Data System (ADS)

Jaya, T. P.; Pradyumnan, P. P.

2017-12-01

Transparent crystalline n-indium tin oxide/p-copper indium oxide diode structures were fabricated on quartz substrates by plasma vapor deposition using radio frequency (RF) magnetron sputtering. The p-n heterojunction diodes were highly transparent in the visible region and exhibited rectifying current-voltage (I-V) characteristics with a good ideality factor. The sputter power during fabrication of the p-layer was found to have a profound effect on I-V characteristics, and the diode with the p-type layer deposited at a maximum power of 200 W exhibited the highest value of the diode ideality factor (η value) of 2.162, which suggests its potential use in optoelectronic applications. The ratio of forward current to reverse current exceeded 80 within the range of applied voltages of -1.5 to +1.5 V in all cases. The diode structure possessed an optical transmission of 60-70% in the visible region.

Structural characterization of phenolics and betacyanins in Gomphrena globosa by high-performance liquid chromatography-diode array detection/electrospray ionization multi-stage mass spectrometry.

PubMed

Ferreres, Federico; Gil-Izquierdo, Angel; Valentão, Patrícia; Andrade, Paula B

2011-11-30

The metabolite profiling of Gomphrena globosa inflorescences was performed by high-performance liquid chromatography-diode array detection/electrospray ionization multi-stage mass spectrometry (HPLC-DAD/ESI-MS(n)). Based on the fragmentation patterns, 24 phenolic compounds were characterized. The identified phenolics include p-coumaric and ferulic acids, quercetin, kaempferol, isorhamnetin, and hydroxylated 6,7-methylenedioxyflavone derivatives, as well as their aglycones, none of them reported before in the species. This is also the first time that tetrahydroxy-methylenedioxyflavone derivatives and acetylglycosides are described in nature. Betacyanins were also found. This study significantly extends the knowledge of the G. globosa metabolome, by providing further insights into its phenolic composition. Copyright © 2011 John Wiley & Sons, Ltd.

Free-space and underwater GHz data transmission using AlGaInN laser diode technology

NASA Astrophysics Data System (ADS)

Najda, S. P.; Perlin, P.; Suski, T.; Marona, L.; Boćkowski, M.; Leszczyński, M.; Wisniewski, P.; Czernecki, R.; Kucharski, R.; Targowski, G.; Watson, S.; Kelly, A. E.

2016-05-01

Laser diodes fabricated from the AlGaInN material system is an emerging technology for defence and security applications; in particular for free space laser communication. Conventional underwater communication is done acoustically with very slow data rates, short reach, and vulnurable for interception. AlGaInN blue-green laser diode technology allows the possibility of both airbourne links and underwater telecom that operate at very fast data rates (GHz), long reach (100's of metres underwater) and can also be quantum encrypted. The latest developments in AlGaInN laser diode technology are reviewed for defence and security applications. The AlGaInN material system allows for laser diodes to be fabricated over a very wide range of wavelengths from u.v., ~380nm, to the visible ~530nm, by tuning the indium content of the laser GaInN quantum well. Ridge waveguide laser diode structures are fabricated to achieve single mode operation with optical powers of <100mW. Visible light communications at high frequency (up to 2.5 Gbit/s) using a directly modulated 422nm Galliumnitride (GaN) blue laser diode is reported in free-space and underwater.

Semiconductor Devices and Applications. Electronics Module 5. Instructor's Guide.

ERIC Educational Resources Information Center

Chappell, John; And Others

This module is the fifth of 10 modules in the competency-based electronics series. Introductory materials include a listing of competencies addressed in the module, a parts/equipment list, and a cross-reference table of instructional materials. Sixteen instructional units cover: semiconductor materials; diodes; diode applications and…

AlGaInN laser diode technology for free-space and plastic optical fibre telecom applications

NASA Astrophysics Data System (ADS)

Najda, S. P.; Perlin, P.; Suski, T.; Marona, L.; Bóckowski, M.; Leszczyński, M.; Wisniewski, P.; Czernecki, R.; Kucharski, R.; Targowski, G.; Watson, S.; Kelly, A. E.; Watson, M. A.; Blanchard, P.; White, H.

2016-03-01

Gallium Nitride laser diodes fabricated from the AlGaInN material system is an emerging technology for laser sources from the UV to visible and is a potential key enabler for new system applications such as free-space (underwater & air bourne links) and plastic optical fibre telecommunications. We measure visible light (free-space and underwater) communications at high frequency (up to 2.5 Gbit/s) and in plastic optical fibre (POF) using a directly modulated GaN laser diode.

RF-to-DC Characteristics of Direct Irradiated On-Chip Gallium Arsenide Schottky Diode and Antenna for Application in Proximity Communication System

PubMed Central

Mustafa, Farahiyah; Hashim, Abdul Manaf

2014-01-01

We report the RF-to-DC characteristics of the integrated AlGaAs/GaAs Schottky diode and antenna under the direct injection and irradiation condition. The conversion efficiency up to 80% under direct injection of 1 GHz signal to the diode was achieved. It was found that the reduction of series resistance and parallel connection of diode and load tend to lead to the improvement of RF-to-DC conversion efficiency. Under direct irradiation from antenna-to-antenna method, the output voltage of 35 mV was still obtainable for the distance of 8 cm between both antennas in spite of large mismatch in the resonant frequency between the diode and the connected antenna. Higher output voltage in volt range is expected to be achievable for the well-matching condition. The proposed on-chip AlGaAs/GaAs HEMT Schottky diode and antenna seems to be a promising candidate to be used for application in proximity communication system as a wireless low power source as well as a highly sensitive RF detector. PMID:24561400

Small core fiber coupled 60-W laser diode

NASA Astrophysics Data System (ADS)

Fernie, Douglas P.; Mannonen, Ilkka; Raven, Anthony L.

1995-05-01

Semiconductor laser diodes are compact, efficient and reliable sources of laser light and 25 W fiber coupled systems developed by Diomed have been in clinical use for over three years. For certain applications, particularly in the treatment of benign prostatic hyperplasia and flexible endoscopy, higher powers are desirable. In these applications the use of flexible optical fibers of no more than 600 micrometers core diameter is essential for compatibility with most commercial delivery fibers and instrumentation. A high power 60 W diode laser system for driving these small core fibers has been developed. The design requirements for medical applications are analyzed and system performance and results of use in gastroenterology and urology with small core fibers will be presented.

Spatial response of synthetic microDiamond and diode detectors measured with kilovoltage synchrotron radiation.

PubMed

Butler, Duncan J; Beveridge, Toby; Lehmann, Joerg; Oliver, Christopher P; Stevenson, Andrew W; Livingstone, Jayde

2018-02-01

To map the spatial response of four solid-state radiation detectors of types commonly used for radiotherapy dosimetry. PTW model 60016 Diode P, 60017 Diode E, 60018 Diode SRS, and 60019 microDiamond detectors were radiographed using a high resolution conventional X-ray system. Their spatial response was then investigated using a 0.1 mm diameter beam of 95 keV average energy photons generated by a synchrotron. The detectors were scanned through the beam while their signal was recorded as a function of position, to map the response. These 2D response maps were created in both the end-on and side-on orientations. The results show the location and size of the active region. End-on, the active area was determined to be centrally located and within 0.2 mm of the manufacturer's specified diameter. The active areas of the 60016 Diode P, 60017 Diode E, 60018 Diode SRS detectors are uniform to within approximately 5%. The 60019 microDiamond showed local variations up to 30%. The extra-cameral signal in the microDiamond was calculated from the side-on scan to be approximately 8% of the signal from the active element. The spatial response of four solid-state detectors has been measured. The technique yielded information about the location and uniformity of the active area, and the extra-cameral signal, for the beam quality used. © 2017 Commonwealth of Australia. Medical Physics © 2017 American Association of Physicists in Medicine. This work is copyright. Apart from any use as permitted under the Copyright Act 1968, no part may be reproduced without prior written permission. Requests and enquiries concerning reproduction and rights should be directed in the first instance to John Wiley & Sons Ltd of The Atrium, Southern Gate, Chichester, West Sussex P019 8SQ UNITED KINGDOM; alternatively to ARPANSA.

Diode Laser Measurements of Concentration and Temperature in Microgravity Combustion

NASA Technical Reports Server (NTRS)

Silver, Joel A.; Kane, Daniel J.

1999-01-01

Diode laser absorption spectroscopy provides a direct method of determinating species concentration and local gas temperature in combustion flames. Under microgravity conditions, diode lasers are particularly suitable, given their compact size, low mass and low power requirements. The development of diode laser-based sensors for gas detection in microgravity is presented, detailing measurements of molecular oxygen. Current progress of this work and future application possibilities for these methods on the International Space Station are discussed.

Molecular Diode Studies Based on a Highly Sensitive Molecular Measurement Technique.

PubMed

Iwane, Madoka; Fujii, Shintaro; Kiguchi, Manabu

2017-04-26

In 1974, molecular electronics pioneers Mark Ratner and Arieh Aviram predicted that a single molecule could act as a diode, in which electronic current can be rectified. The electronic rectification property of the diode is one of basic functions of electronic components and since then, the molecular diode has been investigated as a first single-molecule device that would have a practical application. In this review, we first describe the experimental fabrication and electronic characterization techniques of molecular diodes consisting of a small number of molecules or a single molecule. Then, two main mechanisms of the rectification property of the molecular diode are discussed. Finally, representative results for the molecular diode are reviewed and a brief outlook on crucial issues that need to be addressed in future research is discussed.

Molecular Diode Studies Based on a Highly Sensitive Molecular Measurement Technique

PubMed Central

Iwane, Madoka; Fujii, Shintaro; Kiguchi, Manabu

2017-01-01

In 1974, molecular electronics pioneers Mark Ratner and Arieh Aviram predicted that a single molecule could act as a diode, in which electronic current can be rectified. The electronic rectification property of the diode is one of basic functions of electronic components and since then, the molecular diode has been investigated as a first single-molecule device that would have a practical application. In this review, we first describe the experimental fabrication and electronic characterization techniques of molecular diodes consisting of a small number of molecules or a single molecule. Then, two main mechanisms of the rectification property of the molecular diode are discussed. Finally, representative results for the molecular diode are reviewed and a brief outlook on crucial issues that need to be addressed in future research is discussed. PMID:28445393

The application of diode laser in the treatment of oral soft tissues lesions. A literature review.

PubMed

Ortega-Concepción, Daniel; Cano-Durán, Jorge A; Peña-Cardelles, Juan-Francisco; Paredes-Rodríguez, Víctor-Manuel; González-Serrano, José; López-Quiles, Juan

2017-07-01

Since its appearance in the dental area, the laser has become a treatment of choice in the removal of lesions in the oral soft tissues, due to the numerous advantages they offer, being one of the most used currently the diode laser. The aim of this review was to determine the efficacy and predictability of diode laser as a treatment of soft tissue injuries compared to other surgical methods. A literature review of articles published in PubMed/MEDLINE, Scopus and the Cochrane Library databases between 2007 and 2017 was performed. "Diode laser", "soft tissue", "oral cavity" and "oral surgery" were employed for the search strategy. Only articles published English or Spanish were selected. The diode laser is a minimally invasive technology that offers great advantages, superior to those of the conventional scalpel, such as reduction of bleeding, inflammation and the lower probability of scars. Its effectiveness is comparable to that of other types of lasers, in addition to being an option of lower cost and greater ease of use. Its application in the soft tissues has been evaluated, being a safe and effective method for the excision of lesions like fibromas, epulis fissuratum and the accomplishment of frenectomies. The diode laser can be used with very good results for the removal of lesions in soft tissues, being used in small exophytic lesions due to their easy application, adequate coagulation, no need to suture and the slightest inflammation and pain. Key words: Diode laser, soft tissues, oral cavity, oral surgery.

Direct diode lasers with comparable beam quality to fiber, CO2, and solid state lasers

NASA Astrophysics Data System (ADS)

Huang, Robin K.; Chann, Bien; Burgess, James; Kaiman, Michael; Overman, Robert; Glenn, John D.; Tayebati, Parviz

2012-03-01

TeraDiode has produced kW-class ultra-high brightness fiber-coupled direct diode lasers. A fiber-coupled direct diode laser with a power level of 2,040 W from a 50 μm core diameter, 0.15 numerical aperture (NA) output fiber at a single center wavelength was demonstrated. This was achieved with a novel beam combining and shaping technique using COTS diode lasers. The fiber-coupled output corresponds to a Beam Parameter Product (BPP) of 3.75 mm-mrad and is the lowest BPP kW-class direct diode laser yet reported. This laser is suitable for industrial materials processing applications, including sheet metal cutting and welding. This 2-kW fiber-coupled direct diode laser has comparable brightness to that of industrial fiber lasers and CO2 lasers, and is over 10x brighter than state-of-the-art direct diode lasers.

Diode-pumped solid state green laser for ophthalmologic application

NASA Astrophysics Data System (ADS)

Eno, Taizo; Goto, Yoshiaki; Momiuchi, Masayuki

2002-10-01

We have developed diode pumped solid state green laser suitable for ophthalmologic applications. Beam parameters were designed by considering the coagulation system. We have lowered the beam quality to multi transverse and longitudinal mode on purpose to improve the speckle noise of the slit lamp output beam. The beam profile shows homogeneous intensity and it is very useful for ophthalmologic application. End pumping and short cavity configuration made it possible.

Characterization of the SAR-distribution of the Sigma-60 applicator for regional hyperthermia using a Schottky diode sheet.

PubMed

Van Rhoon, G C; Van Der Heuvel, D J; Ameziane, A; Rietveld, P J M; Volenec, K; Van Der Zee, J

2003-01-01

Characterization of the performance of an hyperthermia applicator by phantom experiments is an essential aspect of quality assurance in hyperthermia. The objective of this study was to quantitatively characterize the energy distribution of the Sigma-60 applicator of the BSD2000 phased array system operated within the normal frequency range of 70-120 MHz. Additionally, the accuracy of the flexible Schottky diode sheet to measure E-field distributions was assessed. The flexible Schottky diode sheet (SDS) consists of 64 diodes mounted on a flexible 125 microm thick polyester foil. The diodes are connected through high resistive wires to the electronic readout system. With the SDS E-field distributions were measured with a resolution of 2.5 x 2.5 cm in a cylindrical phantom, diameter of 26 cm and filled with saline water (2 g/l). The phantom was positioned symmetrically in the Sigma-60 applicator. RF-power was applied to the 4-channel applicator with increasing steps from 25W to a total output of 400 W. The complete system to measure the E-field distribution worked fine and reliably within the Sigma-60 applicator. The E-field distributions measured showed that the longitudinal length of the E-field distribution is more or less constant, e.g. 21-19 cm, over the frequency range of 70-120 MHz, respectively. As expected, the radial E-field distributions show a better focusing towards the centre of the phantom for higher frequencies, e.g. from 15.3-8.7 cm diameter for 70-120 MHz, respectively. The focusing target could be moved accurately from the left to the right side of the phantom. Further it was found that the sensitivity variation of nine diodes located at the centre of the phantom was very small, e.g. < 3% over the whole frequency range. The SAR distributions of the Sigma-60 applicator are in good agreement with theoretically expected values. The flexible Schottky diode sheet proves to be an excellent tool to make accurate, quantitative measurements of E-field distributions at low (25 W) and medium (400 W) power levels. An important feature of the SDS is that it enables one to significantly improve quantitative quality assurance procedures and to start quantitative comparisons of the performance of the different deep hyperthermia systems used by the various hyperthermia groups.

Avalanche diodes for the generation of coherent radiation

NASA Technical Reports Server (NTRS)

Penfield, P., Jr.

1973-01-01

Solid state devices and characterization, and optimum imbedding networks for realizing best performance were investigated along with a barrier injection transit time diode. These diodes were investigated for possible application as microwave amplifiers and oscillators. Measurements were made of diode noise figures in the frequency ranges of 4 - 6 GHz. Initial results indicate that a noise figure of 6 - 8 db may be possible. Optimum device structure and fabrication techniques necessary for low noise performance were investigated. Previously published documents on electrodynamics are included.

Power MOSFET-diode-based limiter for high-frequency ultrasound systems.

PubMed

Choi, Hojong; Kim, Min Gon; Cummins, Thomas M; Hwang, Jae Youn; Shung, K Kirk

2014-10-01

The purpose of the limiter circuits used in the ultrasound imaging systems is to pass low-voltage echo signals generated by ultrasonic transducers while preventing high-voltage short pulses transmitted by pulsers from damaging front-end circuits. Resistor-diode-based limiters (a 50 Ω resistor with a single cross-coupled diode pair) have been widely used in pulse-echo measurement and imaging system applications due to their low cost and simple architecture. However, resistor-diode-based limiters may not be suited for high-frequency ultrasound transducer applications since they produce large signal conduction losses at higher frequencies. Therefore, we propose a new limiter architecture utilizing power MOSFETs, which we call a power MOSFET-diode-based limiter. The performance of a power MOSFET-diode-based limiter was evaluated with respect to insertion loss (IL), total harmonic distortion (THD), and response time (RT). We compared these results with those of three other conventional limiter designs and showed that the power MOSFET-diode-based limiter offers the lowest IL (-1.33 dB) and fastest RT (0.10 µs) with the lowest suppressed output voltage (3.47 Vp-p) among all the limiters at 70 MHz. A pulse-echo test was performed to determine how the new limiter affected the sensitivity and bandwidth of the transducer. We found that the sensitivity and bandwidth of the transducer were 130% and 129% greater, respectively, when combined with the new power MOSFET-diode-based limiter versus the resistor-diode-based limiter. Therefore, these results demonstrate that the power MOSFET-diode-based limiter is capable of producing lower signal attenuation than the three conventional limiter designs at higher frequency operation. © The Author(s) 2014.

Application of a 980-nanometer diode laser in neuroendoscopy: a case series.

PubMed

Reis, Rodolfo Casimiro; Teixeira, Manoel Jacobsen; Mancini, Marilia Wellichan; Almeida-Lopes, Luciana; de Oliveira, Matheus Fernandes; Pinto, Fernando Campos Gomes

2016-02-01

Ventricular neuroendoscopy represents an important advance in the treatment of hydrocephalus. High-power (surgical) Nd:YAG laser and low-level laser therapy (using 685-nm-wavelength diode laser) have been used in conjunction with neuroendoscopy with favorable results. This study evaluated the use of surgical 980-nm-wavelength diode laser for the neuroendoscopic treatment of ventricular diseases. Nine patients underwent a neuroendoscopic procedure with 980-nm diode laser. Complications and follow-up were recorded. Three in-hospital postoperative complications were recorded (1 intraventricular hemorrhage and 2 meningitis cases). The remaining 6 patients had symptom improvement after endoscopic surgery and were discharged from the hospital within 24-48 hours after surgery. Patients were followed for an average of 14 months: 1 patient developed meningitis and another died suddenly at home. The other patients did well and were asymptomatic until the last follow-up consultation. The 980-nm diode laser is considered an important therapeutic tool for endoscopic neurological surgeries. This study showed its application in different ventricular diseases.

Integrated RGB laser light module for autostereoscopic outdoor displays

NASA Astrophysics Data System (ADS)

Reitterer, Jörg; Fidler, Franz; Hambeck, Christian; Saint Julien-Wallsee, Ferdinand; Najda, Stephen; Perlin, Piotr; Stanczyk, Szymon; Czernecki, Robert; McDougall, Stewart D.; Meredith, Wyn; Vickers, Garrie; Landles, Kennedy; Schmid, Ulrich

2015-02-01

We have developed highly compact RGB laser light modules to be used as light sources in multi-view autostereoscopic outdoor displays and projection devices. Each light module consists of an AlGaInP red laser diode, a GaInN blue laser diode, a GaInN green laser diode, as well as a common cylindrical microlens. The plano-convex microlens is a so-called "fast axis collimator", which is widely used for collimating light beams emitted from high-power laser diode bars, and has been optimized for polychromatic RGB laser diodes. The three light beams emitted from the red, green, and blue laser diodes are collimated in only one transverse direction, the so-called "fast axis", and in the orthogonal direction, the so-called "slow axis", the beams pass the microlens uncollimated. In the far field of the integrated RGB light module this produces Gaussian beams with a large ellipticity which are required, e.g., for the application in autostereoscopic outdoor displays. For this application only very low optical output powers of a few milliwatts per laser diode are required and therefore we have developed tailored low-power laser diode chips with short cavity lengths of 250 μm for red and 300 μm for blue. Our RGB laser light module including the three laser diode chips, associated monitor photodiodes, the common microlens, as well as the hermetically sealed package has a total volume of only 0.45 cm³, which to our knowledge is the smallest RGB laser light source to date.

High-efficiency high-brightness diode lasers at 1470 nm/1550 nm for medical and defense applications

NASA Astrophysics Data System (ADS)

Gallup, Kendra; Ungar, Jeff; Vaissie, Laurent; Lammert, Rob; Hu, Wentao

2012-03-01

Diode lasers in the 1400 nm to 1600 nm regime are used in a variety of applications including pumping Er:YAG lasers, range finding, materials processing, aesthetic medical treatments and surgery. In addition to the compact size, efficiency, and low cost advantages of traditional diode lasers, high power semiconductor lasers in the eye-safe regime are becoming widely used in an effort to minimize the unintended impact of potentially hazardous scattered optical radiation from the laser source, the optical delivery system, or the target itself. In this article we describe the performance of high efficiency high brightness InP laser bars at 1470nm and 1550nm developed at QPC Lasers for applications ranging from surgery to rangefinding.

Yb:YAG Lasers for Space Based Remote Sensing

NASA Technical Reports Server (NTRS)

Ewing, J.J.; Fan, T. Y.

1998-01-01

Diode pumped solid state lasers will play a prominent role in future remote sensing missions because of their intrinsic high efficiency and low mass. Applications including altimetry, cloud and aerosol measurement, wind velocity measurement by both coherent and incoherent methods, and species measurements, with appropriate frequency converters, all will benefit from a diode pumped primary laser. To date the "gold standard" diode pumped Nd laser has been the laser of choice for most of these concepts. This paper discusses an alternate 1 micron laser, the YB:YAG laser, and its potential relevance for lidar applications. Conceptual design analysis and, to the extent possible at the time of the conference, preliminary experimental data on the performance of a bread board YB:YAG oscillator will be presented. The paper centers on application of YB:YAG for altimetry, but extension to other applications will be discussed.

Lattice-Matched p-GaAsSb/n-InP Backward Diodes Operating at Zero Bias for Millimeter-Wave Applications

NASA Astrophysics Data System (ADS)

Takahashi, Tsuyoshi; Sato, Masaru; Nakasha, Yasuhiro; Hara, Naoki

2012-09-01

Backward diodes consisting of a heterojunction of p-GaAs0.51Sb0.49/n-InP, which was lattice matched to an InP substrate, were fabricated for the first time and investigated for their characteristics. The lattice-matched heterojunction is effective in preventing surface defects after crystal growth of the diodes. The backward diodes indicated a curvature coefficient of -17.6 V-1, which is sufficiently large for zero-bias operation. Voltage sensitivity of 338 V/W was obtained at 94 GHz by use of the circular mesa diode of 2.0 µm diameter. Optimum voltage sensitivity of 1603 V/W was estimated when the input impedance was completely matched with the diodes.

Gallium phosphide high temperature diodes

NASA Technical Reports Server (NTRS)

Chaffin, R. J.; Dawson, L. R.

1981-01-01

High temperature (300 C) diodes for geothermal and other energy applications were developed. A comparison of reverse leakage currents of Si, GaAs, and GaP was made. Diodes made from GaP should be usable to 500 C. A Liquid Phase Epitaxy (LPE) process for producing high quality, grown junction GaP diodes is described. This process uses low vapor pressure Mg as a dopant which allows multiple boat growth in the same LPE run. These LPE wafers were cut into die and metallized to make the diodes. These diodes produce leakage currents below ten to the -9th power A/sq cm at 400 C while exhibiting good high temperature rectification characteristics. High temperature life test data is presented which shows exceptional stability of the V-I characteristics.

Direct diode lasers and their advantages for materials processing and other applications

NASA Astrophysics Data System (ADS)

Fritsche, Haro; Ferrario, Fabio; Koch, Ralf; Kruschke, Bastian; Pahl, Ulrich; Pflueger, Silke; Grohe, Andreas; Gries, Wolfgang; Eibl, Florian; Kohl, Stefanie; Dobler, Michael

2015-03-01

The brightness of diode lasers is improving continuously and has recently started to approach the level of some solid state lasers. The main technology drivers over the last decade were improvements of the diode laser output power and divergence, enhanced optical stacking techniques and system design, and most recently dense spectral combining. Power densities at the work piece exceed 1 MW/cm2 with commercially available industrial focus optics. These power densities are sufficient for cutting and welding as well as ablation. Single emitter based diode laser systems further offer the advantage of fast current modulation due their lower drive current compared to diode bars. Direct diode lasers may not be able to compete with other technologies as fiber or CO2-lasers in terms of maximum power or beam quality. But diode lasers offer a range of features that are not possible to implement in a classical laser. We present an overview of those features that will make the direct diode laser a very valuable addition in the near future, especially for the materials processing market. As the brightness of diode lasers is constantly improving, BPP of less than 5mm*mrad have been reported with multikW output power. Especially single emitter-based diode lasers further offer the advantage of very fast current modulation due to their low drive current and therefore low drive voltage. State of the art diode drivers are already demonstrated with pulse durations of <10μs and repetition rates can be adjusted continuously from several kHz up to cw mode while addressing power levels from 0-100%. By combining trigger signals with analog modulations nearly any kind of pulse form can be realized. Diode lasers also offer a wide, adaptable range of wavelengths, and wavelength stabilization. We report a line width of less than 0.1nm while the wavelength stability is in the range of MHz which is comparable to solid state lasers. In terms of applications, especially our (broad) wavelength combining technology for power scaling opens the window to new processes of cutting or welding and process control. Fast power modulation through direct current control allows pulses of several microseconds with hundreds of watts average power. Spot sizes of less than 100 μm are obtained at the work piece. Such a diode system allows materials processing with a pulse parameter range that is hardly addressed by any other laser system. High productivity material ablation with cost effective lasers is enabled. The wide variety of wavelengths, high brightness, fast power modulation and high efficiency of diode lasers results in a strong pull of existing markets, but also spurs the development of a wide variety of new applications.

Bulk unipolar diodes formed in GaAs by ion implantation

NASA Astrophysics Data System (ADS)

Hutchinson, S.; Kelly, M. J.; Gwilliam, R.; Sealy, B. J.; Carr, M.

1999-01-01

In an attempt to emulate epitaxially manufactured semiconductor multilayers for microwave device applications, we have produced a camel diode structure in GaAs for the first time, using the tail of a Mg + implant into a molecular beam epitaxially grown n +-n --n + structure. Using a range of ion energies and doses, samples are observed to exhibit bulk unipolar diode characteristics. With low dose and energy, a diode with barrier height of ˜0.8 V and ideality factor ˜1.25 is achieved. 'Punch through' diode characteristics are obtained at high ion dose and energy, some with knee voltages in excess of 7 V.

High-efficiency, low-temperature cesium diodes with lanthanum-hexaboride electrodes

NASA Technical Reports Server (NTRS)

Morris, J. F.

1974-01-01

Lanthanum hexaboride electrodes in 1700 K cesium diodes may triple power outputs compared with those demonstrated for nuclear thermionic space applications. Still greater relative gains seem possible for emitters below 1700 K. Further improvements in cesium diode performance should result from the lower collector temperatures allowed for earth and low power space duties. Decreased temperatures will lessen thermal transport losses that attend thermionic conversion mechanisms. Such advantages will add to those from collector Carnot and electrode effects. If plasma ignition difficulties impede diode temperature reductions, recycling small fractions of the output power could provide ionization. So high efficiency, low temperature cesium diodes with lanthanum hexaboride electrodes appear feasible.

Microwave diode amplifiers with low intermodulation distortion

NASA Technical Reports Server (NTRS)

Cooper, H. W.; Cohn, M.; Buck, D. C.

1975-01-01

Distortions can be greatly reduced in narrow-band applications by using the second harmonic. The ac behavior of simplified diode amplifier has negative resistance depending on slope of equivalent I-V curve.

Resonant tunnelling diode oscillator as an alternative LO for SIS receiver applications

NASA Technical Reports Server (NTRS)

Blundell, R.; Papa, D. C.; Brown, E. R.; Parker, C. D.

1993-01-01

The resonant tunnelling diode (RTD) oscillator has been demonstrated for the first time as a local oscillator (LO) in a heterodyne receiver. Noise measurements made on a sensitive 200 GHz superconductor-insulator-superconductor receiver using both a multiplied Gunn diode and an RTD oscillator as the LO revealed no difference in receiver noise as a function of oscillator type.

Submillimeter sources for radiometry using high power Indium Phosphide Gunn diode oscillators

NASA Technical Reports Server (NTRS)

Deo, Naresh C.

1990-01-01

A study aimed at developing high frequency millimeter wave and submillimeter wave local oscillator sources in the 60-600 GHz range was conducted. Sources involved both fundamental and harmonic-extraction type Indium Phosphide Gunn diode oscillators as well as varactor multipliers. In particular, a high power balanced-doubler using varactor diodes was developed for 166 GHz. It is capable of handling 100 mW input power, and typically produced 25 mW output power. A high frequency tripler operating at 500 GHz output frequency was also developed and cascaded with the balanced-doubler. A dual-diode InP Gunn diode combiner was used to pump this cascaded multiplier to produce on the order of 0.5 mW at 500 GHz. In addition, considerable development and characterization work on InP Gunn diode oscillators was carried out. Design data and operating characteristics were documented for a very wide range of oscillators. The reliability of InP devices was examined, and packaging techniques to enhance the performance were analyzed. A theoretical study of a new class of high power multipliers was conducted for future applications. The sources developed here find many commercial applications for radio astronomy and remote sensing.

Comparative evaluation of antimicrobial effects of Er:YAG, diode, and CO₂ lasers on titanium discs: an experimental study.

PubMed

Tosun, Emre; Tasar, Ferda; Strauss, Robert; Kıvanc, Dolunay Gulmez; Ungor, Cem

2012-05-01

This study examined carbon dioxide (CO(2); 10,600 nm), diode (808 nm), and erbium (Er):yttrium-aluminum-garnet (YAG; 2,940 nm) laser applications on Staphylococcus aureus contaminated, sandblasted, large-grit, acid-etched surface titanium discs and performed a comparative evaluation of the obtained bactericidal effects and the applicability of these effects in clinical practice. This study was carried out in 5 main groups: Er:YAG laser in very short pulse (VSP) emission mode, Er:YAG laser in short pulse (SP) emission mode, diode laser with a 320-nm fiber optic diode laser with an R24-B handpiece, and CO(2) laser. After laser irradiation, dilutions were spread on sheep blood agar plates and, after an incubation period of 24 hours, colony-forming units were counted and compared with the control group, and the bactericidal activity was assessed in relation to the colony counts. The CO(2) laser eliminated 100% of the bacteria at 6 W, 20 Hz, and a 10-ms exposure time/pulse with a 10-second application period (0.8-mm spot size). The continuous-wave diode laser eliminated 97% of the bacteria at 1 W using a 10-second application with a 320-μm optic fiber, 100% of the bacteria were killed with a 1-W, 10-second continuous-wave application with an R14-B handpiece. The Er:YAG laser eliminated 100% of the bacteria at 90 mJ and 10 Hz using a 10-second application in a superpulse mode (300-ms exposure time/pulse). The Er:YAG laser also eliminated 99% to 100% of the bacteria in VSP mode at 90 mJ and 10 Hz with a 10-second application. The results of this study show that a complete, or near complete, elimination of surface bacteria on titanium surfaces can be accomplished in vitro using a CO(2), diode, or Er:YAG laser as long as appropriate parameters are used. Copyright © 2012 American Association of Oral and Maxillofacial Surgeons. All rights reserved.

Diode Lasers and Practical Trace Analysis.

ERIC Educational Resources Information Center

Imasaka, Totaro; Nobuhiko, Ishibashi

1990-01-01

Applications of lasers to molecular absorption spectrometry, molecular fluorescence spectrometry, visible semiconductor fluorometry, atomic absorption spectrometry, and atomic fluorescence spectrometry are discussed. Details of the use of the frequency-doubled diode laser are provided. (CW)

Comparative scanning electron microscope analysis of diode laser and desensitizing toothpastes for evaluation of efficacy of dentinal tubular occlusion.

PubMed

Reddy, Guntakala Vikram; Akula, Sushma; Malgikar, Suryakanth; Babu, Palaparthy Raja; Reddy, Gooty Jagadish; Josephin, Johnson Juliet

2017-01-01

The present study aims to evaluate the efficacy of diode laser alone and in combination with desensitizing toothpastes in occluding dentinal tubules (both partially occluded and completely occluded tubules) by scanning electron microscope (SEM). Fifty human teeth were extracted, cervical cavities were prepared and etched with 17% ethylenediaminetetraacetic acid, and smear layer was removed to expose the tubules. The teeth were divided into five groups: Group I - Application of NovaMin-formulated toothpaste, Group II - Application of Pro-Argin ™ -formulated toothpaste, Group III - Application of diode laser in noncontact mode, Group IV - NovaMin-formulated toothpaste followed by laser irradiation, and Group V - Pro-Argin ™ -formulated toothpaste followed by laser irradiation. After treatment, quantitative analysis of occluded dentinal tubules was done by SEM analysis. The mean values of percentages of total occlusion of dentinal tubules in Groups I, II, III, IV, and V were 92.73% ± 1.38, 90.67% ± 1.86, 96.57% ± 0.64, 97.3% ± 0.68, and 96.9% ± 6.08, respectively. Addition of diode laser (Groups III, IV, and V) yielded a significant occlusion of the dentinal tubules when compared to desensitizing toothpastes alone (Groups I and II). Diode laser (Group III) has shown more efficacy in occluding dentinal tubules when compared with desensitizing toothpastes which was statistically significant ( P < 0.05). Among the five groups, NovaMin + diode laser (Group IV) showed the highest percentage of occluded dentinal tubules.

AlGaInN laser diode technology and systems for defence and security applications

NASA Astrophysics Data System (ADS)

Najda, Stephen P.; Perlin, Piotr; Suski, Tadek; Marona, Lujca; Boćkowski, Mike; Leszczyński, Mike; Wisniewski, Przemek; Czernecki, Robert; Kucharski, Robert; Targowski, Grzegorz; Watson, Scott; Kelly, Antony E.

2015-10-01

AlGaInN laser diodes is an emerging technology for defence and security applications such as underwater communications and sensing, atomic clocks and quantum information. The AlGaInN material system allows for laser diodes to be fabricated over a very wide range of wavelengths from u.v., ~380nm, to the visible ~530nm, by tuning the indium content of the laser GaInN quantum well. Thus AlGaInN laser diode technology is a key enabler for the development of new disruptive system level applications in displays, telecom, defence and other industries. Ridge waveguide laser diodes are fabricated to achieve single mode operation with optical powers up to 100mW with the 400-440nm wavelength range with high reliability. Visible free-space and underwater communication at frequencies up to 2.5GHz is reported using a directly modulated 422nm GaN laser diode. Low defectivity and highly uniform GaN substrates allow arrays and bars to be fabricated. High power operation operation of AlGaInN laser bars with up to 20 emitters have been demonstrated at optical powers up to 4W in a CS package with common contact configuration. An alternative package configuration for AlGaInN laser arrays allows for each individual laser to be individually addressable allowing complex free-space or optical fibre system integration with a very small form-factor.

AlGaInN laser diode technology for defence, security and sensing applications

NASA Astrophysics Data System (ADS)

Najda, Stephen P.; Perlin, Piotr; Suski, Tadek; Marona, Lucja; Boćkowski, Mike; Leszczyński, Mike; Wisniewski, Przemek; Czernecki, Robert; Kucharski, Robert; Targowski, Grzegorz; Watson, Scott; Kelly, Antony E.

2014-10-01

The latest developments in AlGaInN laser diode technology are reviewed for defence, security and sensing applications. The AlGaInN material system allows for laser diodes to be fabricated over a very wide range of wavelengths from u.v., i.e, 380nm, to the visible, i.e., 530nm, by tuning the indium content of the laser GaInN quantum well. Advantages of using Plasma assisted MBE (PAMBE) compared to more conventional MOCVD epitaxy to grow AlGaInN laser structures are highlighted. Ridge waveguide laser diode structures are fabricated to achieve single mode operation with optical powers of <100mW in the 400-420nm wavelength range that are suitable for telecom applications. Visible light communications at high frequency (up to 2.5 Gbit/s) using a directly modulated 422nm Gallium-nitride (GaN) blue laser diode is reported. High power operation of AlGaInN laser diodes is demonstrated with a single chip, AlGaInN laser diode `mini-array' with a common p-contact configuration at powers up to 2.5W cw at 410nm. Low defectivity and highly uniform GaN substrates allow arrays and bars of nitride lasers to be fabricated. GaN laser bars of up to 5mm with 20 emitters, mounted in a CS mount package, give optical powers up to 4W cw at ~410nm with a common contact configuration. An alternative package configuration for AlGaInN laser arrays allows for each individual laser to be individually addressable allowing complex free-space and/or fibre optic system integration within a very small form-factor.or.

Residual determination and risk assessment of buprofezin in plum (Prunus domestica) grown in open-field conditions following the application of three different formulations.

PubMed

Kabir, Md Humayun; Abd El-Aty, A M; Kim, Sung-Woo; Lee, Han Sol; Rahman, Md Musfiqur; Lee, Young-Jun; Chung, Hyung Suk; Lieu, Truong; Choi, Jeong-Heui; Shin, Ho-Chul; Im, Geon-Jae; Hong, Su Myeong; Shim, Jae-Han

2016-11-01

This study was conducted to characterize the residual level and perform a risk assessment on buprofezin formulated as an emulsifiable concentrate, wettable powder, and suspension concentrate over various treatment schedules in plum (Prunus domestica). The samples were extracted with an AOAC quick, easy, cheap, effective, rugged, and safe, 'QuEChERS', method after major modifications. As intrinsic interferences were observed in blank plum samples following dispersive-solid phase extraction (consisting of primary secondary amine and C 18 sorbents), amino cartridges were used for solid-phase extraction. Analysis was carried out using liquid chromatography with diode array detection and confirmed by liquid chromatography-tandem mass spectrometry. The method showed excellent linearity with determination coefficient (R 2  = 1) and satisfactory recoveries (at two spiking levels, 0.5 and 2.5 mg/kg) between 90.98 and 94.74% with relative standard deviation (RSD) ≤8%. The limit of quantification (0.05 mg/kg) was considerably lower than the maximum residue limit (2 mg/kg) set by the Codex Alimentarius. Absolute residue levels for emulsifiable concentrates were highest, perhaps owing to the dilution rate and adjuvant. Notably, all formulation residues were lower than the maximum residue limit, and safety data proved that the fruits are safe for consumers. Copyright © 2016 John Wiley & Sons, Ltd. Copyright © 2016 John Wiley & Sons, Ltd.

Ultra-narrow band diode lasers with arbitrary pulse shape modulation (Conference Presentation)

NASA Astrophysics Data System (ADS)

Ryasnyanskiy, Aleksandr I.; Smirnov, Vadim; Mokhun, Oleksiy; Glebov, Alexei L.; Glebov, Leon B.

2017-03-01

Wideband emission spectra of laser diode bars (several nanometers) can be largely narrowed by the usage of thick volume Bragg gratings (VBGs) recorded in photo-thermo-refractive glass. Such narrowband systems, with GHz-wide emission spectra, found broad applications for Diode Pumped Alkali vapor Lasers, optically pumped rare gas metastable lasers, Spin Exchange Optical Pumping, atom cooling, etc. Although the majority of current applications of narrow line diode lasers require CW operation, there are a variety of fields where operation in a different pulse mode regime is necessary. Commercial electric pulse generators can provide arbitrary current pulse profiles (sinusoidal, rectangular, triangular and their combinations). The pulse duration and repetition rate however, have an influence on the laser diode temperature, and therefore, the emitting wavelength. Thus, a detailed analysis is needed to understand the correspondence between the optical pulse profiles from a diode laser and the current pulse profiles; how the pulse profile and duty cycle affects the laser performance (e.g. the wavelength stability, signal to noise ratio, power stability etc.). We present the results of detailed studies of the narrowband laser diode performance operating in different temporal regimes with arbitrary pulse profiles. The developed narrowband (16 pm) tunable laser systems at 795 nm are capable of operating in different pulse regimes while keeping the linewidth, wavelength, and signal-to-noise ratio (>20 dB) similar to the corresponding CW modules.

Pulse power applications of silicon diodes in EML capacitive pulsers

NASA Astrophysics Data System (ADS)

Dethlefsen, Rolf; McNab, Ian; Dobbie, Clyde; Bernhardt, Tom; Puterbaugh, Robert; Levine, Frank; Coradeschi, Tom; Rinaldi, Vito

1993-01-01

Crowbar diodes are used for increasing the energy transfer from capacitive pulse forming networks. They also prevent voltage reversal on the energy storage capacitors. 52 mm diameter diodes with a 5 kV reverse blocking voltage, rated 40 kA were successfully used for the 32 MJ SSG rail gun. An uprated diode with increased current capability and a 15 kV reverse blocking voltage has been developed. Transient thermal analysis has predicted the current ratings for different pulse length. Analysis verification is obtained from destructive testing.

Metal-Insulator-Semiconductor Diode Consisting of Two-Dimensional Nanomaterials.

PubMed

Jeong, Hyun; Oh, Hye Min; Bang, Seungho; Jeong, Hyeon Jun; An, Sung-Jin; Han, Gang Hee; Kim, Hyun; Yun, Seok Joon; Kim, Ki Kang; Park, Jin Cheol; Lee, Young Hee; Lerondel, Gilles; Jeong, Mun Seok

2016-03-09

We present a novel metal-insulator-semiconductor (MIS) diode consisting of graphene, hexagonal BN, and monolayer MoS2 for application in ultrathin nanoelectronics. The MIS heterojunction structure was fabricated by vertically stacking layered materials using a simple wet chemical transfer method. The stacking of each layer was confirmed by confocal scanning Raman spectroscopy and device performance was evaluated using current versus voltage (I-V) and photocurrent measurements. We clearly observed better current rectification and much higher current flow in the MIS diode than in the p-n junction and the metal-semiconductor diodes made of layered materials. The I-V characteristic curve of the MIS diode indicates that current flows mainly across interfaces as a result of carrier tunneling. Moreover, we observed considerably high photocurrent from the MIS diode under visible light illumination.

Non-reciprocal geometric wave diode by engineering asymmetric shapes of nonlinear materials.

PubMed

Li, Nianbei; Ren, Jie

2014-08-29

Unidirectional nonreciprocal transport is at the heart of many fundamental problems and applications in both science and technology. Here we study the novel design of wave diode devices by engineering asymmetric shapes of nonlinear materials to realize the function of non-reciprocal wave propagations. We first show analytical results revealing that both nonlinearity and asymmetry are necessary to induce such non-reciprocal (asymmetric) wave propagations. Detailed numerical simulations are further performed for a more realistic geometric wave diode model with typical asymmetric shape, where good non-reciprocal wave diode effect is demonstrated. Finally, we discuss the scalability of geometric wave diodes. The results open a flexible way for designing wave diodes efficiently simply through shape engineering of nonlinear materials, which may find broad implications in controlling energy, mass and information transports.

Stacked Switchable Element and Diode Combination

DOEpatents

Branz, H. M.; Wang, Q.

2006-06-27

A device (10) comprises a semiconductor diode (12) and a switchable element (14) positioned in stacked adjacent relationship so that the semiconductor diode (12) and the switchable element (14) are electrically connected in series with one another. The switchable element (14) is switchable from a low-conductance state to a high-conductance state in response to the application of a forming voltage to the switchable element (14).

Stacked switchable element and diode combination

DOEpatents

Branz, Howard M.; Wang, Qi

2006-06-27

A device (10) comprises a semiconductor diode (12) and a switchable element (14) positioned in stacked adjacent relationship so that the semiconductor diode (12) and the switchable element (14) are electrically connected in series with one another. The switchable element (14) is switchable from a low-conductance state to a high-conductance state in response to the application of a forming voltage to the switchable element (14).

Laser diode initiated detonators for space applications

NASA Technical Reports Server (NTRS)

Ewick, David W.; Graham, J. A.; Hawley, J. D.

1993-01-01

Ensign Bickford Aerospace Company (EBAC) has over ten years of experience in the design and development of laser ordnance systems. Recent efforts have focused on the development of laser diode ordnance systems for space applications. Because the laser initiated detonators contain only insensitive secondary explosives, a high degree of system safety is achieved. Typical performance characteristics of a laser diode initiated detonator are described in this paper, including all-fire level, function time, and output. A finite difference model used at EBAC to predict detonator performance, is described and calculated results are compared to experimental data. Finally, the use of statistically designed experiments to evaluate performance of laser initiated detonators is discussed.

Fabrication and characterization of NiO based metal-insulator-metal diode using Langmuir-Blodgett method for high frequency rectification

NASA Astrophysics Data System (ADS)

Azad, Ibrahim; Ram, Manoj K.; Goswami, D. Yogi; Stefanakos, Elias

2018-04-01

Thin film metal-insulator-metal (MIM) diodes have attracted significant attention for use in infrared energy harvesting and detection applications. As demonstrated over the past decades, MIM or metal-insulator-insulator-metal (MIIM) diodes can operate at the THz frequencies range by quantum tunneling of electrons. The aim of this work is to synthesize required ultra-thin insulating layers and fabricate MIM diodes using the Langmuir-Blodgett (LB) technique. The nickel stearate (NiSt) LB precursor film was deposited on glass, silicon (Si), ITO glass and gold coated silicon substrates. The photodesorption (UV exposure) and the thermodesorption (annealing at 100 °C and 350 °C) methods were used to remove organic components from the NiSt LB film and to achieve a uniform homogenous nickel oxide (NiO) film. These ultrathin NiO films were characterized by EDS, AFM, FTIR and cyclic voltammetry methods, respectively. The MIM diode was fabricated by depositing nickel (Ni) on the NiO film, all on a gold (Au) plated silicon (Si) substrate. The current (I)-voltage (V) characteristics of the fabricated diode were studied to understand the conduction mechanism assumed to be tunneling of electron through the ultra-thin insulating layer. The sensitivity of the diode was measured to be as high as 35 V-1. The diode resistance was ˜100 ohms (at a bias voltage of 0.60 V), and the rectification ratio was about 22 (for a signal voltage of ±200 mV). At the bias point, the diode response demonstrated significant non-linearity and high asymmetry, which are very desirable characteristics for applications in infrared detection and harvesting.

Role of diode lasers (800-980 nm) as adjuncts to scaling and root planing in the treatment of chronic periodontitis: a systematic review.

PubMed

Qadri, Talat; Javed, Fawad; Johannsen, Gunnar; Gustafsson, Anders

2015-11-01

The purpose of this study was to systematically review currently available evidence regarding the role of diode lasers (810-980 nm) as adjuncts to scaling and root planing (SRP) in the treatment of chronic periodontitis (CP). Mechanical instrumentation of periodontal tissues followed by diode laser application leads to complete removal of pocket epithelium compared with conventional SRP. To address the focused question "Is SRP with adjunct diode lasers (810-980 nm) therapy more effective in the treatment of CP than when CP is treated by SRP alone?" databases were searched using the following key words: chronic periodontitis, diode laser, surgical, AND scaling and root planing, periodontal diseases, periodontal therapy, AND periodontal treatment. Original studies were included. Letters to the editor, case reports, commentaries, and reviews were excluded. Ten clinical studies were included. In all studies, patients were systemically healthy, and cigarette smokers were included in two studies. In five studies, SRP plus diode laser application was more effective in the treatment of CP than SRP, and three studies showed no difference. In two studies, there was a moderate reduction in periodontal inflammation using SRP plus diode laser. The diameter of optic fiber, laser wavelengths, power, pulse repetition rate, and duration of laser exposure ranged between 300 μm and 2 mm, 810-980 nm, 0.8-2.5 W, 10-60 Hz, and 10-100 ms, respectively. In CP patients with probing depths ≤5 mm, diode lasers, SRP plus diode laser (800-980 nm) is more effective in the treatment of CP than when SRP is used alone.

High brightness laser-diode device emitting 160 watts from a 100 μm/NA 0.22 fiber.

PubMed

Yu, Junhong; Guo, Linui; Wu, Hualing; Wang, Zhao; Tan, Hao; Gao, Songxin; Wu, Deyong; Zhang, Kai

2015-11-10

A practical method of achieving a high-brightness and high-power fiber-coupled laser-diode device is demonstrated both by experiment and ZEMAX software simulation, which is obtained by a beam transformation system, free-space beam combining, and polarization beam combining based on a mini-bar laser-diode chip. Using this method, fiber-coupled laser-diode module output power from the multimode fiber with 100 μm core diameter and 0.22 numerical aperture (NA) could reach 174 W, with equalizing brightness of 14.2  MW/(cm2·sr). By this method, much wider applications of fiber-coupled laser-diodes are anticipated.

Achievement of high diode sensitivity via spin torque-induced resonant expulsion in vortex magnetic tunnel junction

NASA Astrophysics Data System (ADS)

Tsunegi, Sumito; Taniguchi, Tomohiro; Yakushiji, Kay; Fukushima, Akio; Yuasa, Shinji; Kubota, Hitoshi

2018-05-01

We investigated the spin-torque diode effect in a magnetic tunnel junction with FeB free layer. Vortex-core expulsion was observed near the boundary between vortex and uniform states. A high diode voltage of 24 mV was obtained with alternative input power of 0.3 µW, corresponding to huge diode sensitivity of 80,000 mV/mW. In the expulsion region, a broad peak in the high frequency region was observed, which is attributed to the weak excitation of uniform magnetization by thermal noise. The high diode sensitivity is of great importance for device applications such as telecommunications, radar detectors, and high-speed magnetic-field sensors.

Study on constant-step stress accelerated life tests in white organic light-emitting diodes.

PubMed

Zhang, J P; Liu, C; Chen, X; Cheng, G L; Zhou, A X

2014-11-01

In order to obtain reliability information for a white organic light-emitting diode (OLED), two constant and one step stress tests were conducted with its working current increased. The Weibull function was applied to describe the OLED life distribution, and the maximum likelihood estimation (MLE) and its iterative flow chart were used to calculate shape and scale parameters. Furthermore, the accelerated life equation was determined using the least squares method, a Kolmogorov-Smirnov test was performed to assess if the white OLED life follows a Weibull distribution, and self-developed software was used to predict the average and the median lifetimes of the OLED. The numerical results indicate that white OLED life conforms to a Weibull distribution, and that the accelerated life equation completely satisfies the inverse power law. The estimated life of a white OLED may provide significant guidelines for its manufacturers and customers. Copyright © 2014 John Wiley & Sons, Ltd.

Advancements in high-power diode laser stacks for defense applications

NASA Astrophysics Data System (ADS)

Pandey, Rajiv; Merchen, David; Stapleton, Dean; Patterson, Steve; Kissel, Heiko; Fassbender, Wilhlem; Biesenbach, Jens

2012-06-01

This paper reports on the latest advancements in vertical high-power diode laser stacks using micro-channel coolers, which deliver the most compact footprint, power scalability and highest power/bar of any diode laser package. We present electro-optical (E-O) data on water-cooled stacks with wavelengths ranging from 7xx nm to 9xx nm and power levels of up to 5.8kW, delivered @ 200W/bar, CW mode, and a power-conversion efficiency of >60%, with both-axis collimation on a bar-to-bar pitch of 1.78mm. Also, presented is E-O data on a compact, conductively cooled, hardsoldered, stack package based on conventional CuW and AlN materials, with bar-to-bar pitch of 1.8mm, delivering average power/bar >15W operating up to 25% duty cycle, 10ms pulses @ 45C. The water-cooled stacks can be used as pump-sources for diode-pumped alkali lasers (DPALs) or for more traditional diode-pumped solid-state lasers (DPSSL). which are power/brightness scaled for directed energy weapons applications and the conductively-cooled stacks as illuminators.

High yield and ultrafast sources of electrically triggered entangled-photon pairs based on strain-tunable quantum dots.

PubMed

Zhang, Jiaxiang; Wildmann, Johannes S; Ding, Fei; Trotta, Rinaldo; Huo, Yongheng; Zallo, Eugenio; Huber, Daniel; Rastelli, Armando; Schmidt, Oliver G

2015-12-01

Triggered sources of entangled photon pairs are key components in most quantum communication protocols. For practical quantum applications, electrical triggering would allow the realization of compact and deterministic sources of entangled photons. Entangled-light-emitting-diodes based on semiconductor quantum dots are among the most promising sources that can potentially address this task. However, entangled-light-emitting-diodes are plagued by a source of randomness, which results in a very low probability of finding quantum dots with sufficiently small fine structure splitting for entangled-photon generation (∼10(-2)). Here we introduce strain-tunable entangled-light-emitting-diodes that exploit piezoelectric-induced strains to tune quantum dots for entangled-photon generation. We demonstrate that up to 30% of the quantum dots in strain-tunable entangled-light-emitting-diodes emit polarization-entangled photons. An entanglement fidelity as high as 0.83 is achieved with fast temporal post selection. Driven at high speed, that is 400 MHz, strain-tunable entangled-light-emitting-diodes emerge as promising devices for high data-rate quantum applications.

Advanced injection seeder for various applications: form LIDARs to supercontinuum sources

NASA Astrophysics Data System (ADS)

Grzes, Pawel

2017-12-01

The paper describes an injection seeder driver (prototype) for a directly modulated semiconductor laser diode. The device provides adjustable pulse duration and repetition frequency to shape an output signal. A temperature controller stabilizes a laser diode spectrum. Additionally, to avoid a back oscillation, redundant power supply holds a generation until next stages shut down. Low EMI design and ESD protection guarantee stable operation even in a noisy environment. The controller is connected to the PC via USB and parameters of the pulse are digitally controlled through a graphical interface. The injection seeder controller can be used with a majority of commercially available laser diodes. In the experimental setup a telecommunication DFB laser with 4 GHz bandwidth was used. It allows achieving subnanosecond pulses generated at the repetition rate ranging from 1 kHz to 50 MHz. The developed injection seeder controller with a proper laser diode can be used in many scientific, industrial and medical applications.

Indocyanine green-augmented diode laser therapy of telangiectatic leg veins: a randomized controlled proof-of-concept trial.

PubMed

Klein, Annette; Bäumler, Wolfgang; Koller, Michael; Shafirstein, Gal; Kohl, Elisabeth A; Landthaler, Michael; Babilas, Philipp

2012-07-01

Telangiectatic leg veins, which affect about 40-50% of adults, represent a frequent cosmetic rather than a medical problem. Besides sclerotherapy, various laser devices are common treatment options. However, complete clearance rates can only be achieved in a small number of patients. In this proof-of-concept study, the safety and efficacy of indocyanine green (ICG)-augmented diode laser therapy (808 nm) was evaluated for the treatment of telangiectatic leg veins. ICG (2 mg/kg body weight) was intravenously administered in 15 female patients (skin type II to III) with telangiectatic leg veins (measuring between 0.25 and 3 mm in diameter). Immediately after ICG injection, diode laser pulses with different radiant exposures (50-110 J/cm(2)) were applied as one single treatment. Safety and efficacy were assessed 1 and 3 months after treatment by a blinded investigator and the patient. Treatments with the pulsed dye laser (PDL) and the diode laser without ICG served as reference therapies. The safety of ICG application and diode laser treatment was excellent in all patients with no persisting side effects. Vessel clearance was dose-dependent. Diode laser treatment at radiant exposures between 100 and 110 J/cm(2) resulted in good vessel clearance, which even improved to excellent after the application of double pulses. Diode laser therapy without ICG and PDL treatment induced poor to moderate clearance of telangiectatic leg veins. ICG-augmented diode laser therapy has proved to be a safe and effective treatment option for telangiectatic leg veins. Copyright © 2012 Wiley Periodicals, Inc.

III-V/II-VI Hybrid Quantum Well Mid-Infrared Lasers

DTIC Science & Technology

2005-01-25

semiconductor lasers are of great importance for many applications such as laser diode spectroscopy , pollution monitoring, low-loss optical communication...great importance for many applications such as laser diode spectroscopy, pollutant monitoring, low-losses longwavelength optical communication...InAsSb/CdMgSe laser structure 1.2. Characterization of the laser structures and interface quality (STM, EPFM etc) 1.3. Study of spontaneous and

Device having two optical ports for switching applications

DOEpatents

Rosen, Ayre; Stabile, Paul J.

1991-09-24

A two-sided light-activatable semiconductor switch device having an optical port on each side thereof. The semiconductor device may be a p-i-n diode or of bulk intrinsic material. A two ported p-i-n diode, reverse-biased to "off" by a 1.3 kV dc power supply, conducted 192 A when activated by two 1 kW laser diode arrays, one for each optical port.

Stacked switchable element and diode combination with a low breakdown switchable element

DOEpatents

Wang, Qi [Littleton, CO; Ward, James Scott [Englewood, CO; Hu, Jian [Englewood, CO; Branz, Howard M [Boulder, CO

2012-06-19

A device (10) comprises a semiconductor diode (12) and a switchable element (14) positioned in stacked adjacent relationship. The semiconductor diode (12) and the switchable element (14) are electrically connected in series with one another. The switchable element (14) is switchable from a low-conductance state to a high-conductance state in response to the application of a low-density forming current and/or a low voltage.

The optical characterization of organometallic complex thin films by spectroscopic ellipsometry and photovoltaic diode application

DOE Office of Scientific and Technical Information (OSTI.GOV)

Özaydın, C.; Güllü, Ö., E-mail: omergullu@gmail.com; Pakma, O.

2016-05-15

Highlights: • Optical properties and thickness of the A novel organometallic complex (OMC) film were investigated by spectroscopic ellipsometry (SE). • Au/OMC/n-Si metal/interlayer/semiconductor (MIS) diode has been fabricated • This paper presents the I–V analysis of Au/OMC/n-Si MIS diode. • Current–voltage and photovoltaic properties of the diode were investigated. - Abstract: In this work, organometallic complex (OMC) films have been deposited onto glass or silicon substrates by spin coating technique and their photovoltaic application potential has been investigated. Optical properties and thickness of the film have been investigated by spectroscopic ellipsometry (SE). Also, transmittance spectrum has been taken by UV/vismore » spectrophotometer. The optical method has been used to determine the band gap value of the films. Also, Au/OMC/n-Si metal/interlayer/semiconductor (MIS) diode has been fabricated. Current–voltage and photovoltaic properties of the structure were investigated. The ideality factor (n) and barrier height (Φ{sub b}) values of the diode were found to be 2.89 and 0.79 eV, respectively. The device shows photovoltaic behavior with a maximum open-circuit voltage of 396 mV and a short circuit current of 33.8 μA under 300 W light.« less

High power multiple wavelength diode laser stack for DPSSL application without temperature control

NASA Astrophysics Data System (ADS)

Hou, Dong; Yin, Xia; Wang, Jingwei; Chen, Shi; Zhan, Yun; Li, Xiaoning; Fan, Yingmin; Liu, Xingsheng

2018-02-01

High power diode laser stack is widely used in pumping solid-state laser for years. Normally an integrated temperature control module is required for stabilizing the output power of solid-state laser, as the output power of the solid-state laser highly depends on the emission wavelength and the wavelength shift of diode lasers according to the temperature changes. However the temperature control module is inconvenient for this application, due to its large dimension, high electric power consumption and extra adding a complicated controlling system. Furthermore, it takes dozens of seconds to stabilize the output power when the laser system is turned on. In this work, a compact hard soldered high power conduction cooled diode laser stack with multiple wavelengths is developed for stabilizing the output power of solid-state laser in a certain temperature range. The stack consists of 5 laser bars with the pitch of 0.43mm. The peak output power of each bar in the diode laser stack reaches as much as 557W and the combined lasing wavelength spectrum profile spans 15nm. The solidstate laser, structured with multiple wavelength diode laser stacks, allows the ambient temperature change of 65°C without suddenly degrading the optical performance.

Next generation diode lasers with enhanced brightness

NASA Astrophysics Data System (ADS)

Ried, S.; Rauch, S.; Irmler, L.; Rikels, J.; Killi, A.; Papastathopoulos, E.; Sarailou, E.; Zimer, H.

2018-02-01

High-power diode lasers are nowadays well established manufacturing tools in high power materials processing, mainly for tactile welding, surface treatment and cladding applications. Typical beam parameter products (BPP) of such lasers range from 30 to 50 mm·mrad at several kilowatts of output power. TRUMPF offers a product line of diode lasers to its customers ranging from 150 W up to 6 kW of output power. These diode lasers combine high reliability with small footprint and high efficiency. However, up to now these lasers are limited in brightness due to the commonly used spatial and coarse spectral beam combining techniques. Recently diode lasers with enhanced brightness have been presented by use of dense wavelength multiplexing (DWM). In this paper we report on TRUMPF's diode lasers utilizing DWM. We demonstrate a 2 kW and a 4 kW system ideally suited for fine welding and scanner welding applications. The typical laser efficiency is in the range of 50%. The system offers plug and play exchange of the fiber beam delivery cable, multiple optical outputs and integrated cooling in a very compact package. An advanced control system offers flexible integration in any customer's shop floor environment and includes industry 4.0 capabilities (e.g. condition monitoring and predictive maintenance).

Non-Reciprocal Geometric Wave Diode by Engineering Asymmetric Shapes of Nonlinear Materials

PubMed Central

Li, Nianbei; Ren, Jie

2014-01-01

Unidirectional nonreciprocal transport is at the heart of many fundamental problems and applications in both science and technology. Here we study the novel design of wave diode devices by engineering asymmetric shapes of nonlinear materials to realize the function of non-reciprocal wave propagations. We first show analytical results revealing that both nonlinearity and asymmetry are necessary to induce such non-reciprocal (asymmetric) wave propagations. Detailed numerical simulations are further performed for a more realistic geometric wave diode model with typical asymmetric shape, where good non-reciprocal wave diode effect is demonstrated. Finally, we discuss the scalability of geometric wave diodes. The results open a flexible way for designing wave diodes efficiently simply through shape engineering of nonlinear materials, which may find broad implications in controlling energy, mass and information transports. PMID:25169668

High performance Schottky diodes based on indium-gallium-zinc-oxide

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Jiawei; Song, Aimin, E-mail: A.Song@manchester.ac.uk; Xin, Qian

Indium-gallium-zinc-oxide (IGZO) Schottky diodes exhibit excellent performance in comparison with conventional devices used in future flexible high frequency electronics. In this work, a high performance Pt IGZO Schottky diode was presented by using a new fabrication process. An argon/oxygen mixture gas was introduced during the deposition of the Pt layer to reduce the oxygen deficiency at the Schottky interface. The diode showed a high barrier height of 0.92 eV and a low ideality factor of 1.36 from the current–voltage characteristics. Even the radius of the active area was 0.1 mm, and the diode showed a cut-off frequency of 6 MHz in themore » rectifier circuit. Using the diode as a demodulator, a potential application was also demonstrated in this work.« less

Conduction mechanism change with transport oxide layer thickness in oxide hetero-interface diode

NASA Astrophysics Data System (ADS)

Nam, Bu-il; Park, Jong Seo; Lim, Keon-Hee; Ahn, Yong-keon; Lee, Jinwon; Park, Jun-woo; Cho, Nam-Kwang; Lee, Donggun; Lee, Han-Bo-Ram; Kim, Youn Sang

2017-07-01

An effective and facile strategy is proposed to demonstrate an engineered oxide hetero-interface of a thin film diode with a high current density and low operating voltage. The electrical characteristics of an oxide hetero-interface thin film diode are governed by two theoretical models: the space charge-limited current model and the Fowler-Nordheim (F-N) tunneling model. Interestingly, the dominant mechanism strongly depends on the insulator thickness, and the mechanism change occurs at a critical thickness. This paper shows that conduction mechanisms of oxide hetero-interface thin film diodes depend on thicknesses of transport oxide layers and that current densities of these can be exponentially increased through quantum tunneling in the diodes with the thicknesses less than 10 nm. These oxide hetero-interface diodes have great potential for low-powered transparent nanoscale applications.

Comparative scanning electron microscope analysis of diode laser and desensitizing toothpastes for evaluation of efficacy of dentinal tubular occlusion

PubMed Central

Reddy, Guntakala Vikram; Akula, Sushma; Malgikar, Suryakanth; Babu, Palaparthy Raja; Reddy, Gooty Jagadish; Josephin, Johnson Juliet

2017-01-01

Background: The present study aims to evaluate the efficacy of diode laser alone and in combination with desensitizing toothpastes in occluding dentinal tubules (both partially occluded and completely occluded tubules) by scanning electron microscope (SEM). Materials and Methods: Fifty human teeth were extracted, cervical cavities were prepared and etched with 17% ethylenediaminetetraacetic acid, and smear layer was removed to expose the tubules. The teeth were divided into five groups: Group I – Application of NovaMin-formulated toothpaste, Group II – Application of Pro-Argin™-formulated toothpaste, Group III – Application of diode laser in noncontact mode, Group IV – NovaMin-formulated toothpaste followed by laser irradiation, and Group V – Pro-Argin™-formulated toothpaste followed by laser irradiation. After treatment, quantitative analysis of occluded dentinal tubules was done by SEM analysis. Results: The mean values of percentages of total occlusion of dentinal tubules in Groups I, II, III, IV, and V were 92.73% ± 1.38, 90.67% ± 1.86, 96.57% ± 0.64, 97.3% ± 0.68, and 96.9% ± 6.08, respectively. Addition of diode laser (Groups III, IV, and V) yielded a significant occlusion of the dentinal tubules when compared to desensitizing toothpastes alone (Groups I and II). Conclusion: Diode laser (Group III) has shown more efficacy in occluding dentinal tubules when compared with desensitizing toothpastes which was statistically significant (P < 0.05). Among the five groups, NovaMin + diode laser (Group IV) showed the highest percentage of occluded dentinal tubules. PMID:29398853

View from... Photonics Meets Biology Summer School: The bio-mission of diode lasers

NASA Astrophysics Data System (ADS)

Won, Rachel

2015-12-01

Diode lasers represent a viable alternative to light sources used in many biomedical applications. Their ongoing development will further increase their importance, offering not only multiple wavelength ranges, but also higher power levels.

Switchable zero-index metamaterials by loading positive-intrinsic-negative diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xiang, Nan; Cheng, Qiang, E-mail: qiangcheng@emfield.org; Zhao, Jie

2014-02-03

We propose switchable zero-index metamaterials (ZIMs) implemented by split ring resonators (SRRs) loaded with positive-intrinsic-negative (PIN) diode switching elements. We demonstrate that ZIMs can be achieved at around 10 GHz when the PIN diode is switched off. When the PIN diode is switched on, however, the designed metamaterials have impedance matching to the free space, which is useful to reduce the reflections at the interface of two media. The switchable ZIMs are suitable for a wide variety of applications like the beam forming and directive radiation. Experimental results validate the switching ability of the proposed ZIMs.

The advances and characteristics of high-power diode laser materials processing

NASA Astrophysics Data System (ADS)

Li, Lin

2000-10-01

This paper presents a review of the direct applications of high-power diode lasers for materials processing including soldering, surface modification (hardening, cladding, glazing and wetting modifications), welding, scribing, sheet metal bending, marking, engraving, paint stripping, powder sintering, synthesis, brazing and machining. The specific advantages and disadvantages of diode laser materials processing are compared with CO 2, Nd:YAG and excimer lasers. An effort is made to identify the fundamental differences in their beam/material interaction characteristics and materials behaviour. Also an appraisal of the future prospects of the high-power diode lasers for materials processing is given.

Simple solutions for relativistic generalizations of the Child-Langmuir law and the Langmuir-Blodgett law

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang Yongpeng; Northwest Institute of Nuclear Technology, P.O. Box 69-13, Xi'an 710024; Liu Guozhi

In this paper, the Child-Langmuir law and Langmuir-Blodgett law are generalized to the relativistic regime by a simple method. Two classical laws suitable for the nonrelativistic regime are modified to simple approximate expressions applicable for calculating the space-charge-limited currents of one-dimensional steady-state planar diodes and coaxial diodes under the relativistic regime. The simple approximate expressions, extending the Child-Langmuir law and Langmuir-Blodgett law to fit the full range of voltage, have small relative errors less than 1% for one-dimensional planar diodes and less than 5% for coaxial diodes.

Microfluidic bead-based diodes with targeted circular microchannels for low Reynolds number applications.

PubMed

Sochol, Ryan D; Lu, Albert; Lei, Jonathan; Iwai, Kosuke; Lee, Luke P; Lin, Liwei

2014-05-07

Self-regulating fluidic components are critical to the advancement of microfluidic processors for chemical and biological applications, such as sample preparation on chip, point-of-care molecular diagnostics, and implantable drug delivery devices. Although researchers have developed a wide range of components to enable flow rectification in fluidic systems, engineering microfluidic diodes that function at the low Reynolds number (Re) flows and smaller scales of emerging micro/nanofluidic platforms has remained a considerable challenge. Recently, researchers have demonstrated microfluidic diodes that utilize high numbers of suspended microbeads as dynamic resistive elements; however, using spherical particles to block fluid flow through rectangular microchannels is inherently limited. To overcome this issue, here we present a single-layer microfluidic bead-based diode (18 μm in height) that uses a targeted circular-shaped microchannel for the docking of a single microbead (15 μm in diameter) to rectify fluid flow under low Re conditions. Three-dimensional simulations and experimental results revealed that adjusting the docking channel geometry and size to better match the suspended microbead greatly increased the diodicity (Di) performance. Arraying multiple bead-based diodes in parallel was found to adversely affect system efficacy, while arraying multiple diodes in series was observed to enhance device performance. In particular, systems consisting of four microfluidic bead-based diodes with targeted circular-shaped docking channels in series revealed average Di's ranging from 2.72 ± 0.41 to 10.21 ± 1.53 corresponding to Re varying from 0.1 to 0.6.

The HALNA project: Diode-pumped solid-state laser for inertial fusion energy

NASA Astrophysics Data System (ADS)

Kawashima, T.; Ikegawa, T.; Kawanaka, J.; Miyanaga, N.; Nakatsuka, M.; Izawa, Y.; Matsumoto, O.; Yasuhara, R.; Kurita, T.; Sekine, T.; Miyamoto, M.; Kan, H.; Furukawa, H.; Motokoshi, S.; Kanabe, T.

2006-06-01

High-enery, rep.-rated, diode-pumped solid-state laser (DPSSL) is one of leading candidates for inertial fusion energy driver (IFE) and related laser-driven high-field applications. The project for the development of IFE laser driver in Japan, HALNA (High Average-power Laser for Nuclear Fusion Application) at ILE, Osaka University, aims to demonstrate 100-J pulse energy at 10 Hz rep. rate with 5 times diffraction limited beam quality. In this article, the advanced solid-state laser technologies for one half scale of HALNA (50 J, 10 Hz) are presented including thermally managed slab amplifier of Nd:phosphate glass and zig-zag optical geometry, and uniform, large-area diode-pumping.

Comparison of three methods reducing the beam parameter product of a laser diode stack for long range laser illumination applications

NASA Astrophysics Data System (ADS)

Lutz, Yves; Poyet, Jean-Michel; Metzger, Nicolas

2013-10-01

Laser diode stacks are interesting laser sources for active imaging illuminators. They allow the accumulation of large amounts of energy in multi-pulse mode, which is well suited for long-range image recording. Even when laser diode stacks are equipped with fast-axis collimation (FAC) and slow-axis collimation (SAC) microlenses, their beam parameter product (BPP) are not compatible with a direct use in highly efficient and compact illuminators. This is particularly true when narrow divergences are required such as for long range applications. To overcome these difficulties, we conducted investigations in three different ways. A first near infrared illuminator based on the use of conductively cooled mini-bars was designed, realized and successfully tested during outdoor experimentations. This custom specified stack was then replaced in a second step by an off-the-shelf FAC + SAC micro lensed stack where the brightness was increased by polarization overlapping. The third method still based on a commercial laser diode stack uses a non imaging optical shaping principle resulting in a virtually restacked laser source with enhanced beam parameters. This low cost, efficient and low alignment sensitivity beam shaping method allows obtaining a compact and high performance laser diode illuminator for long range active imaging applications. The three methods are presented and compared in this paper.

Cellulose ionics: switching ionic diode responses by surface charge in reconstituted cellulose films.

PubMed

Aaronson, Barak D B; Wigmore, David; Johns, Marcus A; Scott, Janet L; Polikarpov, Igor; Marken, Frank

2017-09-25

Cellulose films as well as chitosan-modified cellulose films of approximately 5 μm thickness, reconstituted from ionic liquid media onto a poly(ethylene-terephthalate) (PET, 6 μm thickness) film with a 5, 10, 20, or 40 μm diameter laser-drilled microhole, show significant current rectification in aqueous NaCl. Reconstituted α-cellulose films provide "cationic diodes" (due to predominant cation conductivity) whereas chitosan-doped cellulose shows "anionic diode" effects (due to predominant anion conductivity). The current rectification, or "ionic diode" behaviour, is investigated as a function of NaCl concentration, pH, microhole diameter, and molecular weight of the chitosan dopant. Future applications are envisaged exploiting the surface charge induced switching of diode currents for signal amplification in sensing.

Design and characterization of a novel power over fiber system integrating a high power diode laser

NASA Astrophysics Data System (ADS)

Perales, Mico; Yang, Mei-huan; Wu, Cheng-liang; Hsu, Chin-wei; Chao, Wei-sheng; Chen, Kun-hsein; Zahuranec, Terry

2017-02-01

High power 9xx nm diode lasers along with MH GoPower's (MHGP's) flexible line of Photovoltaic Power Converters (PPCs) are spurring high power applications for power over fiber (PoF), including applications for powering remote sensors and sensors monitoring high voltage equipment, powering high voltage IGBT gate drivers, converters used in RF over Fiber (RFoF) systems, and system power applications, including powering UAVs. In PoF, laser power is transmitted over fiber, and is converted to electricity by photovoltaic cells (packaged into Photovoltaic Power Converters, or PPCs) which efficiently convert the laser light. In this research, we design a high power multi-channel PoF system, incorporating a high power 976 nm diode laser, a cabling system with fiber break detection, and a multichannel PPC-module. We then characterizes system features such as its response time to system commands, the PPC module's electrical output stability, the PPC-module's thermal response, the fiber break detection system response, and the diode laser optical output stability. The high power PoF system and this research will serve as a scalable model for those interested in researching, developing, or deploying a high power, voltage isolated, and optically driven power source for high reliability utility, communications, defense, and scientific applications.

Passive Optical Locking Techniques for Diode Lasers

NASA Astrophysics Data System (ADS)

Zhang, Quan

1995-01-01

Most current diode-based nonlinear frequency converters utilize electronic frequency locking techniques. However, this type of locking technique typically involves very complex electronics, and suffers the 'power-drop' problem. This dissertation is devoted to the development of an all-optical passive locking technique that locks the diode laser frequency to the external cavity resonance stably without using any kind of electronic servo. The amplitude noise problem associated with the strong optical locking has been studied. Single-mode operation of a passively locked single-stripe diode with an amplitude stability better than 1% has been achieved. This passive optical locking technique applies to broad-area diodes as well as single-stripe diodes, and can be easily used to generate blue light. A schematic of a milliwatt level blue laser based on the single-stripe diode locking technique has been proposed. A 120 mW 467 nm blue laser has been built using the tapered amplifier locking technique. In addition to diode-based blue lasers, this passive locking technique has applications in nonlinear frequency conversions, resonant spectroscopy, particle counter devices, telecommunications, and medical devices.

Electronic and Interfacial Properties of PD/6H-SiC Schottky Diode Gas Sensors

NASA Technical Reports Server (NTRS)

Chen, Liang-Yu; Hunter, Gary W.; Neudeck, Philip G.; Bansal, Gaurav; Petit, Jeremy B.; Knight, Dak; Liu, Chung-Chiun; Wu, Qinghai

1996-01-01

Pd/SiC Schottky diodes detect hydrogen and hydrocarbons with high sensitivity. Variation of the diode temperature from 100 C to 200 C shows that the diode sensitivity to propylene is temperature dependent. Long-term heat treating at 425 C up to 140 hours is carried out to determine the effect of extended heat treating on the diode properties and gas sensitivity. The heat treating significantly affects the diode's capacitive characteristics, but the diode's current carrying characteristics are much more stable with a large response to hydrogen. Scanning Electron Microscopy and X-ray Spectrometry studies of the Pd surface after the heating show cluster formation and background regions with grain structure observed in both regions. The Pd and Si concentrations vary between grains. Auger Electron Spectroscopy depth profiles revealed that the heat treating promoted interdiffusion and reaction between the Pd and SiC dw broadened the interface region. This work shows that Pd/SiC Schottky diodes have significant potential as high temperature gas sensors, but stabilization of the structure is necessary to insure their repeatability in long-term, high temperature applications.

Design and fabrication of metal-insulator-metal diode for high frequency applications

NASA Astrophysics Data System (ADS)

Azad, Ibrahim; Ram, Manoj K.; Goswami, D. Yogi; Stefanakos, Elias

2017-02-01

Metal-insulator-metal (MIM) diodes play significant role in high speed electronics where high frequency rectification is needed. Quantum based tunneling mechanism helps MIM diodes to rectify at high frequency signals. Rectenna, antenna coupled MIM diodes are becoming popular due to their potential use as IR detectors and energy harvesters. Because of small active area, MIM diodes could easily be incorporated into integrated circuits (IC's). The objective of the work is to design and develop MIM diodes for high frequency rectification. In this work, thin insulating layer of ZnO was fabricated using Langmuir-Blodgett (LB) technique which facilitates ultrathin thin, uniform and pinhole free fabrication of insulating layer. The ZnO layer was synthesized from organic precursor of zinc acetate layer. The optimization in the LB technique of fabrication process led to fabricate MIM diodes with high non-linearity and sensitivity. Moreover, the top and bottom electrodes as well as active area of the diodes were patterned using UV-tunneling conduction mechanism. The highest sensitivity of the diode was measured around 37 (A/W), and the rectification ratio was found around 36 under low applied bias at +/-100 mV.

Improvements of high-power diode laser line generators open up new application fields

NASA Astrophysics Data System (ADS)

Meinschien, J.; Bayer, A.; Bruns, P.; Aschke, L.; Lissotschenko, V. N.

2009-02-01

Beam shaping improvements of line generators based on high power diode lasers lead to new application fields as hardening, annealing or cutting of various materials. Of special interest is the laser treatment of silicon. An overview of the wide variety of applications is presented with special emphasis of the relevance of unique laser beam parameters like power density and beam uniformity. Complementary to vision application and plastic processing, these new application markets become more and more important and can now be addressed by high power diode laser line generators. Herewith, a family of high power diode laser line generators is presented that covers this wide spectrum of application fields with very different requirements, including new applications as cutting of silicon or glass, as well as the beam shaping concepts behind it. A laser that generates a 5m long and 4mm wide homogeneous laser line is shown with peak intensities of 0.2W/cm2 for inspection of railway catenaries as well as a laser that generates a homogeneous intensity distribution of 60mm x 2mm size with peak intensities of 225W/cm2 for plastic processing. For the annealing of silicon surfaces, a laser was designed that generates an extraordinary uniform intensity distribution with residual inhomogeneities (contrast ratio) of less than 3% over a line length of 11mm and peak intensities of up to 75kW/cm2. Ultimately, a laser line is shown with a peak intensity of 250kW/cm2 used for cutting applications. Results of various application tests performed with the above mentioned lasers are discussed, particularly the surface treatment of silicon and the cutting of glass.

Environmental testing of a diode-laser-pumped Nd:YAG laser and a set of diode-laser-arrays

NASA Technical Reports Server (NTRS)

Hemmati, H.; Lesh, J. R.

1989-01-01

Results of the environmental test of a compact, rigid and lightweight diode-laser-pumped Nd:YAG laser module are discussed. All optical elements are bonded onto the module using space applicable epoxy, and two 200 mW diode laser arrays for pump sources are used to achieve 126 mW of CW output with about 7 percent electrical-to-optical conversion efficiency. This laser assembly and a set of 20 semiconductor diode laser arrays were environmentally tested by being subjected to vibrational and thermal conditions similar to those experienced during launch of the Space Shuttle, and both performed well. Nevertheless, some damage to the laser front facet in diode lasers was observed. Significant degradation was observed only on lasers which performed poorly in the life test. Improvements in the reliability of the Nd:YAG laser are suggested.

Performance Evaluation of III-V Hetero/Homojunction Esaki Tunnel Diodes on Si and Lattice Matched Substrates

NASA Astrophysics Data System (ADS)

Thomas, Paul M.

Understanding of quantum tunneling phenomenon in semiconductor systems is increasingly important as CMOS replacement technologies are investigated. This work studies a variety of heterojunction materials and types to increase tunnel currents to CMOS competitive levels and to understand how integration onto Si substrates affects performance. Esaki tunnel diodes were grown by Molecular Beam Epitaxy (MBE) on Si substrates via a graded buffer and control Esaki tunnel diodes grown on lattice matched substrates for this work. Peak current density for each diode is extracted and benchmarked to build an empirical data set for predicting diode performance. Additionally, statistics are used as tool to show peak to valley ratio for the III-V on Si sample and the control perform similarly below a threshold area. This work has applications beyond logic, as multijunction solar cell, heterojunction bipolar transistor, and light emitting diode designs all benefit from better tunnel contact design.

High Power Laser Diode Arrays for 2-Micron Solid State Coherent Lidars Applications

NASA Technical Reports Server (NTRS)

Amzajerdian, Farzin; Meadows, Byron; Kavaya, Michael J.; Singh, Upendra; Sudesh, Vikas; Baker, Nathaniel

2003-01-01

Laser diode arrays are critical components of any diode-pumped solid state laser systems, constraining their performance and reliability. Laser diode arrays (LDAs) are used as the pump source for energizing the solid state lasing media to generate an intense coherent laser beam with a high spatial and spectral quality. The solid state laser design and the characteristics of its lasing materials define the operating wavelength, pulse duration, and power of the laser diodes. The pump requirements for high pulse energy 2-micron solid state lasers are substantially different from those of more widely used 1-micron lasers and in many aspects more challenging [1]. Furthermore, the reliability and lifetime demanded by many coherent lidar applications, such as global wind profiling from space and long-range clear air turbulence detection from aircraft, are beyond the capability of currently available LDAs. In addition to the need for more reliable LDAs with longer lifetime, further improvement in the operational parameters of high power quasi-cw LDAs, such as electrical efficiency, brightness, and duty cycle, are also necessary for developing cost-effective 2-micron coherent lidar systems for applications that impose stringent size, heat dissipation, and power constraints. Global wind sounding from space is one of such applications, which is the main driver for this work as part of NASA s Laser Risk Reduction Program. This paper discusses the current state of the 792 nm LDA technology and the technology areas being pursued toward improving their performance. The design and development of a unique characterization facility for addressing the specific issues associated with the LDAs for pumping 2-micron coherent lidar transmitters and identifying areas of technological improvement will be described. Finally, the results of measurements to date on various standard laser diode packages, as well as custom-designed packages with potentially longer lifetime, will be reported.

High-performance planar green light-emitting diodes based on a PEDOT:PSS/CH3NH3PbBr3/ZnO sandwich structure

NASA Astrophysics Data System (ADS)

Shi, Zhi-Feng; Sun, Xu-Guang; Wu, Di; Xu, Ting-Ting; Zhuang, Shi-Wei; Tian, Yong-Tao; Li, Xin-Jian; Du, Guo-Tong

2016-05-01

Recently, perovskite-based light-emitting diodes based on organometal halide emitters have attracted much attention because of their excellent properties of high color purity, tunable emission wavelength and a low-temperature processing technique. As is well-known, organic light-emitting diodes have shown powerful capabilities in this field; however, the fabrication of these devices typically relies on high-temperature and high-vacuum processes, which increases the final cost of the product and renders them uneconomical for use in large-area displays. Organic/inorganic hybrid halide perovskites match with these material requirements, as it is possible to prepare such materials with high crystallinity through solution processing at low temperature. Herein, we demonstrated a high-brightness green light-emitting diode based on PEDOT:PSS/CH3NH3PbBr3/ZnO sandwich structures by a spin-coating method combined with a sputtering system. Under forward bias, a dominant emission peak at ~530 nm with a low full width of half-maximum (FWHM) of 30 nm can be achieved at room temperature. Owing to the high surface coverage of the CH3NH3PbBr3 layer and a device design based on carrier injection and a confinement configuration, the proposed diode exhibits good electroluminescence performance, with an external quantum efficiency of 0.0645%. More importantly, we investigated the working stability of the studied diode under continuous operation to verify the sensitivity of the electroluminescence performance to ambient atmosphere and to assess the suitability of the diode for practical applications. Moreover, the underlying reasons for the undesirable emission decay are tentatively discussed. This demonstration of an effective green electroluminescence based on CH3NH3PbBr3 provides valuable information for the design and development of perovskites as efficient emitters, thus facilitating their use in existing applications and suggesting new potential applications.

Use of high-power diode lasers for hardening and thermal conduction welding of metals

NASA Astrophysics Data System (ADS)

Klocke, Fritz; Demmer, Axel; Zaboklicki, A.

1997-08-01

CO2 and Nd:YAG high power lasers have become established as machining tools in industrial manufacturing over the last few years. The most important advantages compared to conventional processing techniques lie in the absence of forces introduced by the laser into the workpiece and in the simple arid highly accurate control in terms ofpositioning and timing making the laser a universally applicable, wear-free and extremely flexible tool /1,2/. The laser can be utilised costeffectively in numerous manufacturing processes but there are also further applications for the laser which produce excellent results from a technical point of view, but are not justified in terms of cost. The extensive use of lasers, particularly in small companies and workshops, is hindered by two main reasons: the complexity and size ofthe laser source and plant and the high investment costs /3/. A new generation of lasers, the high power diode lasers (HDL), combines high performance with a compact design, making the laser a cheap and easy to use tool with many applications /3,4,5,6/. In the diode laser, the laser beam is generated by a microelectronic diode which transforms electrical energy directly into laser energy. Diode lasers with low power outputs have, for some time, been making their mark in our everyday lives: they are used in CD players, laser printers and scanners at cash tills. Modern telecommunications would be impossible without these lasers which enable information to be transmitted in the form oflight impulses through optical fibres. They can also be found in compact precision measurement instrumentation - range fmders, interferometers and pollutant analysis devices /3,6/. In the field of material processing, the first applications ofthe laser, such as for soldering, inscribing, surface hardening and plastic or heat conduction welding, will exceed the limits ofthe relatively low performance output currently available. The diode laser has a shorter wavelength than the CO2 and Nd:YAG lasers making it more favourable in terms ofthe absorption behaviour ofthe laser beam - an advantage that will soon have a significant effect on the range of its applications.

Stabilized diode seed laser for flight and space-based remote lidar sensing applications

NASA Astrophysics Data System (ADS)

McNeil, Shirley; Pandit, Pushkar; Battle, Philip; Rudd, Joe; Hovis, Floyd

2017-08-01

AdvR, through support of the NASA SBIR program, has developed fiber-based components and sub-systems that are routinely used on NASA's airborne missions, and is now developing an environmentally hardened, diode-based, locked wavelength, seed laser for future space-based high spectral resolution lidar applications. The seed laser source utilizes a fiber-coupled diode laser, a fiber-coupled, calibrated iodine reference module to provide an absolute wavelength reference, and an integrated, dual-element, nonlinear optical waveguide component for second harmonic generation, spectral formatting and wavelength locking. The diode laser operates over a range close to 1064.5 nm, provides for stabilization of the seed to the desired iodine transition and allows for a highly-efficient, fully-integrated seed source that is well-suited for use in airborne and space-based environments. A summary of component level environmental testing and spectral purity measurements with a seeded Nd:YAG laser will be presented. A direct-diode, wavelength-locked seed laser will reduce the overall size weight and power (SWaP) requirements of the laser transmitter, thus directly addressing the need for developing compact, efficient, lidar component technologies for use in airborne and space-based environments.

Surface cleaning techniques and efficient B-field profiles for lithium ion sources on extraction ion diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cuneo, M.E.; Menge, P.R.; Hanson, D.L.

Application of ion beams to Inertial Confinement Fusion requires efficient production, transport and focusing of an intense, low microdivergence beam of an appropriate range ion. At Sandia, the authors are studying the production of lithium ion beams in extraction applied-B ion diodes on the SABRE accelerator (5 MV, 250 kA). Evidence on both SABRE (1 TW) and PBFA-II (20 TW) indicates that the lithium beam turns off and is replaced by a beam of mostly protons and carbon, possibly due to electron thermal and stimulated desorption of hydrocarbon surface contamination with subsequent avalanche ionization. Turn-off of the lithium beam ismore » accompanied by rapid impedance collapse. Surface cleaning techniques are being developed to reduce beam contamination, increase the total lithium energy and reduce the rate of diode impedance collapse. Application of surface cleaning techniques has increased the production of lithium from passive LiF sources by a factor of 2. Improved diode electric and magnetic field profiles have increased the diode efficiency and production of lithium by a factor of 5, without surface cleaning. Work is ongoing to combine these two advances which are discussed here.« less

760nm: a new laser diode wavelength for hair removal modules

NASA Astrophysics Data System (ADS)

Wölz, Martin; Zorn, Martin; Pietrzak, Agnieszka; Kindsvater, Alex; Meusel, Jens; Hülsewede, Ralf; Sebastian, Jürgen

2015-02-01

A new high-power semiconductor laser diode module, emitting at 760 nm is introduced. This wavelength permits optimum treatment results for fair skin individuals, as demonstrated by the use of Alexandrite lasers in dermatology. Hair removal applications benefit from the industry-standard diode laser design utilizing highly efficient, portable and light-weight construction. We show the performance of a tap-water-cooled encapsulated laser diode stack with a window for use in dermatological hand-pieces. The stack design takes into account the pulse lengths required for selectivity in heating the hair follicle vs. the skin. Super-long pulse durations place the hair removal laser between industry-standard CW and QCW applications. The new 760 nm laser diode bars are 30% fill factor devices with 1.5 mm long resonator cavities. At CW operation, these units provide 40 W of optical power at 43 A with wall-plug-efficiency greater than 50%. The maximum output power before COMD is 90 W. Lifetime measurements starting at 40 W show an optical power loss of 20% after about 3000 h. The hair removal modules are available in 1x3, 1x8 and 2x8 bar configurations.

Clinical Application of Diode Laser (980 nm) in Maxillofacial Surgical Procedures.

PubMed

Aldelaimi, Tahrir N; Khalil, Afrah A

2015-06-01

For many procedures, lasers are now becoming the treatment of choice by both clinicians and patients, and in some cases, the standard of care. This clinical study was carried out at Department of Maxillofacial Surgery, Ramadi Teaching Hospital, Rashid Private Hospital and Razi Private Hospital, Anbar Health Directorate, Anbar Province, Iraq. A total of 32 patients including 22 (≈ 70%) male and 10 (≈ 30%) female with age range from 5 months to 34 years old. Chirolas 20 W diode laser emitting at 980 nm was used. Our preliminary clinical findings include sufficient hemostasis, coagulation properties, precise incision margin, lack of swelling, bleeding, pain, scar tissue formation and overall satisfaction were observed in the clinical application. The clinical application of the diode (980 nm) laser in maxillofacial surgery proved to be of beneficial effect for daily practice and considered practical, effective, easy to used, offers a safe, acceptable, and impressive alternative for conventional surgical techniques.

Laser diodes for sensing applications: adaptive cruise control and more

NASA Astrophysics Data System (ADS)

Heerlein, Joerg; Morgott, Stefan; Ferstl, Christian

2005-02-01

Adaptive Cruise Controls (ACC) and pre-crash sensors require an intelligent eye which can recognize traffic situations and deliver a 3-dimensional view. Both microwave RADAR and "Light RADAR" (LIDAR) systems are well suited as sensors. In order to utilize the advantages of LIDARs -- such as lower cost, simpler assembly and high reliability -- the key component, the laser diode, is of primary importance. Here, we present laser diodes which meet the requirements of the automotive industry.

Generation of 3.5 W of diffraction-limited green light from SHG of a single tapered diode laser in a cascade of nonlinear crystals

NASA Astrophysics Data System (ADS)

Hansen, Anders K.; Jensen, Ole B.; Sumpf, Bernd; Erbert, Götz; Unterhuber, Angelika; Drexler, Wolfgang; Andersen, Peter E.; Petersen, Paul Michael

2014-02-01

Many applications, e.g., within biomedicine stand to benefit greatly from the development of diode laser-based multi- Watt efficient compact green laser sources. The low power of existing diode lasers in the green area (about 100 mW) means that the most promising approach remains nonlinear frequency conversion of infrared tapered diode lasers. Here, we describe the generation of 3.5 W of diffraction-limited green light from SHG of a single tapered diode laser, itself yielding 10 W at 1063 nm. This SHG is performed in single pass through a cascade of two PPMgO:LN crystals with re-focusing and dispersion compensating optics between the two nonlinear crystals. In the low-power limit, such a cascade of two crystals has the theoretical potential for generation of four times as much power as a single crystal without adding significantly to the complexity of the system. The experimentally achieved power of 3.5 W corresponds to a power enhancement greater than 2 compared to SHG in each of the crystals individually and is the highest visible output power generated by frequency conversion of a single diode laser. Such laser sources provide the necessary pump power for biophotonics applications, such as optical coherence tomography or multimodal imaging devices, e.g., FTCARS-OCT, based on a strongly pumped ultrafast Ti:Sapphire laser.

Evaluation of antimicrobial and thermal effects of diode laser on root canal dentin.

PubMed

Kıvanc, B H; Arısu, H D; Sağlam, B C; Akça, G; Gürel, M A; Görgül, G

2017-12-01

The aim of this study was to evaluate the antimicrobial effects of diode laser and temperature rise on the root surface during application. Thirty-six teeth were chemomechanically prepared and irrigated with 2.5% sodium hypochlorite and 17% ethylenediaminetetraacetic acid, and then autoclaved and incubated with a suspension of Enterococcus faecalis. The specimens were randomly divided into three groups (n = 12): Group 1, irradiated by diode laser at 1.2 W; Group 2, irradiated by diode laser at 2 W; and Group 3, irradiated by diode laser at 3 W. The grown bacteria were counted and the mean numbers of the each test tube were determined. The temperature was measured on the external apical third of the root during laser application. The mean values of results for each group were compared using one-way analysis of variance and Tukey test. No significant difference was obtained among the test groups in terms of the colony counts (P > 0.05). According to the temperature changes, there was a significant difference between groups (P < 0.05). Temperature rises were 16.79°C, 10.20°C, and 6.25°C in Group 3, Group 2, and Group 1, respectively. Diode laser irradiation with 1.2 W demonstrated comparable performance with 2 W and 3 W power sets for elimination of E. faecalis from root canal with less temperature rise.

Active stabilization of a diode laser injection lock.

PubMed

Saxberg, Brendan; Plotkin-Swing, Benjamin; Gupta, Subhadeep

2016-06-01

We report on a device to electronically stabilize the optical injection lock of a semiconductor diode laser. Our technique uses as discriminator the peak height of the laser's transmission signal on a scanning Fabry-Perot cavity and feeds back to the diode current, thereby maintaining maximum optical power in the injected mode. A two-component feedback algorithm provides constant optimization of the injection lock, keeping it robust to slow thermal drifts and allowing fast recovery from sudden failures such as temporary occlusion of the injection beam. We demonstrate the successful performance of our stabilization method in a diode laser setup at 399 nm used for laser cooling of Yb atoms. The device eases the requirements on passive stabilization and can benefit any diode laser injection lock application, particularly those where several such locks are employed.

Direct diode pumped Ti:sapphire ultrafast regenerative amplifier system

DOE PAGES

Backus, Sterling; Durfee, Charles; Lemons, Randy; ...

2017-02-10

Here, we report on a direct diode-pumped Ti:sapphire ultrafast regenerative amplifier laser system producing multi-uJ energies with repetition rate from 50 to 250 kHz. By combining cryogenic cooling of Ti:sapphire with high brightness fiber-coupled 450nm laser diodes, we for the first time demonstrate a power-scalable CW-pumped architecture that can be directly applied to demanding ultrafast applications such as coherent high-harmonic EUV generation without any complex post-amplification pulse compression. Initial results promise a new era for Ti:sapphire amplifiers not only for ultrafast laser applications, but also for tunable CW sources. We discuss the unique challenges to implementation, as well as themore » solutions to these challenges.« less

Direct diode pumped Ti:sapphire ultrafast regenerative amplifier system

DOE Office of Scientific and Technical Information (OSTI.GOV)

Backus, Sterling; Durfee, Charles; Lemons, Randy

Here, we report on a direct diode-pumped Ti:sapphire ultrafast regenerative amplifier laser system producing multi-uJ energies with repetition rate from 50 to 250 kHz. By combining cryogenic cooling of Ti:sapphire with high brightness fiber-coupled 450nm laser diodes, we for the first time demonstrate a power-scalable CW-pumped architecture that can be directly applied to demanding ultrafast applications such as coherent high-harmonic EUV generation without any complex post-amplification pulse compression. Initial results promise a new era for Ti:sapphire amplifiers not only for ultrafast laser applications, but also for tunable CW sources. We discuss the unique challenges to implementation, as well as themore » solutions to these challenges.« less

Extreme ultraviolet spectroscopy diagnostics of low-temperature plasmas based on a sliced multilayer grating and glass capillary optics.

PubMed

Kantsyrev, V L; Safronova, A S; Williamson, K M; Wilcox, P; Ouart, N D; Yilmaz, M F; Struve, K W; Voronov, D L; Feshchenko, R M; Artyukov, I A; Vinogradov, A V

2008-10-01

New extreme ultraviolet (EUV) spectroscopic diagnostics of relatively low-temperature plasmas based on the application of an EUV spectrometer and fast EUV diodes combined with glass capillary optics is described. An advanced high resolution dispersive element sliced multilayer grating was used in the compact EUV spectrometer. For monitoring of the time history of radiation, filtered fast EUV diodes were used in the same spectral region (>13 nm) as the EUV spectrometer. The radiation from the plasma was captured by using a single inexpensive glass capillary that was transported onto the spectrometer entrance slit and EUV diode. The use of glass capillary optics allowed placement of the spectrometer and diodes behind the thick radiation shield outside the direction of a possible hard x-ray radiation beam and debris from the plasma source. The results of the testing and application of this diagnostic for a compact laser plasma source are presented. Examples of modeling with parameters of plasmas are discussed.

Magnetically insulated diode for generating pulsed neutron and gamma ray emissions

DOEpatents

Kuswa, G.W.; Leeper, R.J.

1984-08-16

A magnetically insulated diode employs a permanent magnet to generate a magnetic insulating field between a spaced anode and cathode in a vacuum. An ion source is provided in the vicinity of the anode and used to liberate ions for acceleration toward the cathode. The ions are virtually unaffected by the magnetic field and are accelerated into a target for generating a nuclear reaction. The ions and target material may be selected to generate either neutrons or gamma ray emissions from the reaction of the accelerated ions and the target. In another aspect of the invention, a field coil is employed as part of one of the electrodes. A plasma prefill is provided between the electrodes prior to the application of a pulsating potential to one of the electrodes. The field coil multiplies the applied voltage for high diode voltage applications. The diode may be used to generate a /sup 7/Li(p,..gamma..)/sup 8/Be reaction to produce 16.5 MeV gamma emission.

High-efficiency electroluminescence and amplified spontaneous emission from a thermally activated delayed fluorescent near-infrared emitter

NASA Astrophysics Data System (ADS)

Kim, Dae-Hyeon; D'Aléo, Anthony; Chen, Xian-Kai; Sandanayaka, Atula D. S.; Yao, Dandan; Zhao, Li; Komino, Takeshi; Zaborova, Elena; Canard, Gabriel; Tsuchiya, Youichi; Choi, Eunyoung; Wu, Jeong Weon; Fages, Frédéric; Brédas, Jean-Luc; Ribierre, Jean-Charles; Adachi, Chihaya

2018-02-01

Near-infrared organic light-emitting diodes and semiconductor lasers could benefit a variety of applications including night-vision displays, sensors and information-secured displays. Organic dyes can generate electroluminescence efficiently at visible wavelengths, but organic light-emitting diodes are still underperforming in the near-infrared region. Here, we report thermally activated delayed fluorescent organic light-emitting diodes that operate at near-infrared wavelengths with a maximum external quantum efficiency of nearly 10% using a boron difluoride curcuminoid derivative. As well as an effective upconversion from triplet to singlet excited states due to the non-adiabatic coupling effect, this donor-acceptor-donor compound also exhibits efficient amplified spontaneous emission. By controlling the polarity of the active medium, the maximum emission wavelength of the electroluminescence spectrum can be tuned from 700 to 780 nm. This study represents an important advance in near-infrared organic light-emitting diodes and the design of alternative molecular architectures for photonic applications based on thermally activated delayed fluorescence.

Thermal diodes, regulators, and switches: Physical mechanisms and potential applications

NASA Astrophysics Data System (ADS)

Wehmeyer, Geoff; Yabuki, Tomohide; Monachon, Christian; Wu, Junqiao; Dames, Chris

2017-12-01

Interest in new thermal diodes, regulators, and switches has been rapidly growing because these components have the potential for rich transport phenomena that cannot be achieved using traditional thermal resistors and capacitors. Each of these thermal components has a signature functionality: Thermal diodes can rectify heat currents, thermal regulators can maintain a desired temperature, and thermal switches can actively control the heat transfer. Here, we review the fundamental physical mechanisms of switchable and nonlinear heat transfer which have been harnessed to make thermal diodes, switches, and regulators. The review focuses on experimental demonstrations, mainly near room temperature, and spans the fields of heat conduction, convection, and radiation. We emphasize the changes in thermal properties across phase transitions and thermal switching using electric and magnetic fields. After surveying fundamental mechanisms, we present various nonlinear and active thermal circuits that are based on analogies with well-known electrical circuits, and analyze potential applications in solid-state refrigeration and waste heat scavenging.

Magnetically insulated diode for generating pulsed neutron and gamma ray emissions

DOEpatents

Kuswa, Glenn W.; Leeper, Ramon J.

1987-01-01

A magnetically insulated diode employs a permanent magnet to generate a magnetic insulating field between a spaced anode and cathode in a vacuum. An ion source is provided in the vicinity of the anode and used to liberate ions for acceleration toward the cathode. The ions are virtually unaffected by the magnetic field and are accelerated into a target for generating an nuclear reaction. The ions and target material may be selected to generate either neutrons or gamma ray emissions from the reaction of the accelerated ions and the target. In another aspect of the invention, a field coil is employed as part of one of the electrodes. A plasma prefill is provided between the electrodes prior to the application of a pulsating potential to one of the electrodes. The field coil multiplies the applied voltage for high diode voltage applications. The diode may be used to generate a .sup.7 Li(p,.gamma.).sup.8 Be reaction to produce 16.5 MeV gamma emission.

Reverse Current Characteristics of InP Gunn Diodes for W-Band Waveguide Applications.

PubMed

Kim, Hyun-Seok; Heo, Jun-Woo; Chol, Seok-Gyu; Ko, Dong-Sik; Rhee, Jin-Koo

2015-07-01

InP is considered as the most promising material for millimeter-wave laser-diode applications owing to its superior noise performance and wide operating frequency range of 75-110 GHz. In this study, we demonstrate the fabrication of InP Gunn diodes with a current-limiting structure using rapid thermal annealing to modulate the potential height formed between an n-type InP active layer and a cathode contact. We also explore the reverse current characteristics of the InP Gunn diodes. Experimental results indicate a maximum anode current and an oscillation frequency of 200 mA and 93.53 GHz, respectively. The current-voltage characteristics are modeled by considering the Schottky and ohmic contacts, work function variations, negative differential resistance (NDR), and tunneling effect. Although no direct indication of the NDR is observed, the simulation results match the measured data well. The modeling results show that the NDR effect is always present but is masked because of electron emission across the shallow Schottky barrier.

Effects of low-dose light-emitting-diode therapy in combination with water bath for atopic dermatitis in NC/Nga mice.

PubMed

Kim, Chang-Hyun; Cheong, Kyung Ah; Lim, Won Suk; Park, Hyung-Moo; Lee, Ai-Young

2016-01-01

Light-emitting diode (LED) phototherapy and water bath therapy have beneficial effect on atopic dermatitis (AD)-like skin disease. However, not all current treatments work well and alternative therapies are need. The contribution of combination therapy with low-dose 850 nm LED and water bath was investigated on dermatophagoides farina (Df)-induced dermatitis in NC/Nga mice. Low-dose LED (10, 15, and 20 J/cm(2) ) irradiation, water bath (36 ± 1°C) were administered separately and together to the Df-induced NC/Nga mice in acrylic jar once a day for 2 weeks. Combined therapy with low-dose LED therapy and water bath therapy significantly ameliorated the development of AD-like skin lesions. These effects were correlated with the suppression of total IgE, NO, histamine, and Th2-mediated immune responses. Furthermore, combination therapy significantly reduced the infiltration of inflammatory cells and the induction of thymic stromal lymphopoietin (TSLP) in the skin lesions. The beneficial therapeutic effects of this combination therapy might regulate by the inhibition of various immunological responses including Th2-mediated immune responses, inflammatory mediators such as IgE, histamine, and NO, as well as inflammatory cells. The combination therapy of LED and water bath might be used as an efficacious, safe, and steroid-free alternative therapeutic strategy for the treatment of AD. © 2015 John Wiley & Sons A/S. Published by John Wiley & Sons Ltd.

Determination of fucoxanthin isomers in microalgae (Isochrysis sp.) by high-performance liquid chromatography coupled with diode-array detector multistage mass spectrometry coupled with positive electrospray ionization.

PubMed

Crupi, Pasquale; Toci, Aline Theodore; Mangini, Silvio; Wrubl, Federico; Rodolfi, Liliana; Tredici, Mario R; Coletta, Antonio; Antonacci, Donato

2013-05-15

Due to their health benefits, there is growing interest in the production and use of carotenoids from natural sources, e.g. microalgae. To date, only Haematococcus pluvialis and Dunaliella, that accumulate, respectively, astaxanthin and β-carotene in large quantities, are grown commercially. However, interest is also being focused on other xanthophylls, such as (all-E)-fucoxanthin characterized by anti-obesity and anti-carcinogenic effects. In this regard, rigorous chemical and analytical techniques following preparative isolation of components are needed to unequivocally identify individual carotenoids in microalgae. The carotenoid profile of Isochrysis sp. biomass, produced in closed photobioreactors, was determined by reversed-phase C30 (RP-30) high-performance liquid chromatography coupled with diode-array detector mass spectrometry using positive electrospray ionization (HPLC/DAD-MS/ESI(+) ) analysis. Additionally, multistage mass spectrometry (MS(n) ) analyses, together with fine structures of the UV-vis spectra, were used to differentiate structural and geometrical isomers. This technique allowed the simultaneous determination of geometrical, isomers of fucoxanthin (all-E-fucoxanthin, 13Z-, 13'Z- and 9'Z-fucoxanthin), diatoxanthin and 5,8-epoxydiadinoxanthin diasteroisomers (R/S). The analyzed extracts contained fucoxanthin isomers as the major carotenoids and, in particular, (all-E)-fucoxanthin was the main geometrical isomer (~85%) found at a concentration of 17 mg/g of the lyophilized biomass. Considering the high content of fucoxanthin in Isochrysis sp. biomass, the microalga could be proposed as a source of this compound for nutraceutical and pharmaceutical applications. Copyright © 2013 John Wiley & Sons, Ltd.

Characterisation of diode-connected SiGe BiCMOS HBTs for space applications

NASA Astrophysics Data System (ADS)

Venter, Johan; Sinha, Saurabh; Lambrechts, Wynand

2016-02-01

Silicon-germanium (SiGe) bipolar complementary metal-oxide semiconductor (BiCMOS) transistors have vertical doping profiles reaching deeper into the substrate when compared to lateral CMOS transistors. Apart from benefiting from high-speed, high current gain and low-output resistance due to its vertical profile, BiCMOS technology is increasingly becoming a preferred technology for researchers to realise next-generation space-based optoelectronic applications. BiCMOS transistors have inherent radiation hardening, to an extent predictable cryogenic performance and monolithic integration potential. SiGe BiCMOS transistors and p-n junction diodes have been researched and used as a primary active component for over the last two decades. However, further research can be conducted with diode-connected heterojunction bipolar transistors (HBTs) operating at cryogenic temperatures. This work investigates these characteristics and models devices by adapting standard fabrication technology components. This work focuses on measurements of the current-voltage relationship (I-V curves) and capacitance-voltage relationships (C-V curves) of diode-connected HBTs. One configuration is proposed and measured, which is emitterbase shorted. The I-V curves are measured for various temperature points ranging from room temperature (300 K) to the temperature of liquid nitrogen (77 K). The measured datasets are used to extract a model of the formed diode operating at cryogenic temperatures and used as a standard library component in computer aided software designs. The advantage of having broad-range temperature models of SiGe transistors becomes apparent when considering implementation of application-specific integrated circuits and silicon-based infrared radiation photodetectors on a single wafer, thus shortening interconnects and lowering parasitic interference, decreasing the overall die size and improving on overall cost-effectiveness. Primary applications include space-based geothermal radiation sensing and cryogenic terahertz radiation sensing.

New Submount Requirement of Conductively Cooled Laser Diodes for Lidar Applications

NASA Technical Reports Server (NTRS)

Mo, S. Y.; Cutler, A. D.; Choi, S. H.; Lee, M. H.; Singh, U. N.

2000-01-01

New submount technology is essential for the development of conductively cooled high power diode laser. The simulation and experimental results indicate that thermal conductivity of submount for high power laser-diode must be at least 600 W/m/k or higher for stable operation. We have simulated several theoretical thermal model based on new submount designs and characterized high power diode lasers to determine temperature effects on the performances of laser diodes. The characterization system measures the beam power, output beam profile, temperature distribution, and spectroscopic property of high power diode laser. The characterization system is composed of four main parts: an infrared imaging camera, a CCD camera, a monochromator, and a power meter. Thermal characteristics of two commercial-grade CW 20-W diode laser bars with open heat-sink type were determined with respect to the line shift of emission spectra and beam power stability. The center wavelength of laser emission has a tendency to shift toward longer wavelength as the driving current and heat sink temperature are increased. The increase of heat sink temperature decreases the output power of the laser bar too. Such results lay the guidelines for the design of new submount for high power laser-diodes.

LASER BIOLOGY AND MEDICINE: Application of tunable diode lasers for a highly sensitive analysis of gaseous biomarkers in exhaled air

NASA Astrophysics Data System (ADS)

Stepanov, E. V.; Milyaev, Varerii A.

2002-11-01

The application of tunable diode lasers for a highly sensitive analysis of gaseous biomarkers in exhaled air in biomedical diagnostics is discussed. The principle of operation and the design of a laser analyser for studying the composition of exhaled air are described. The results of detection of gaseous biomarkers in exhaled air, including clinical studies, which demonstrate the diagnostic possibilities of the method, are presented.

Contact diode laser: high power application through fiberoptic cutting tips.

PubMed

Wafapoor, H; Peyman, G A; Moritera, T

1994-01-01

Diode laser energy has been applied through a fiberoptic probe using a power setting of 2.5 watts (W) in the continuous mode. In this study we employed high-power diode laser energy (4 to 12 W, continuous wave) to incise ocular tissue through a fiberoptic probe using 100 microns and 300 microns tips. The retina was photocoagulated with a 300 microns orb tip. No bleeding occurred at the incision sites. Histologic evaluation revealed coagulation into the healthy tissue ranging from 10 to 50 microns.

Integrated heterodyne terahertz transceiver

DOEpatents

Lee, Mark [Albuquerque, NM; Wanke, Michael C [Albuquerque, NM

2009-06-23

A heterodyne terahertz transceiver comprises a quantum cascade laser that is integrated on-chip with a Schottky diode mixer. An antenna connected to the Schottky diode receives a terahertz signal. The quantum cascade laser couples terahertz local oscillator power to the Schottky diode to mix with the received terahertz signal to provide an intermediate frequency output signal. The fully integrated transceiver optimizes power efficiency, sensitivity, compactness, and reliability. The transceiver can be used in compact, fieldable systems covering a wide variety of deployable applications not possible with existing technology.

High-performance noncontact thermal diode via asymmetric nanostructures

NASA Astrophysics Data System (ADS)

Shen, Jiadong; Liu, Xianglei; He, Huan; Wu, Weitao; Liu, Baoan

2018-05-01

Electric diodes, though laying the foundation of modern electronics and information processing industries, suffer from ineffectiveness and even failure at high temperatures. Thermal diodes are promising alternatives to relieve above limitations, but usually possess low rectification ratios, and how to obtain a high-performance thermal rectification effect is still an open question. This paper proposes an efficient contactless thermal diode based on the near-field thermal radiation of asymmetric doped silicon nanostructures. The rectification ratio computed via exact scattering theories is demonstrated to be as high as 10 at a nanoscale gap distance and period, outperforming the counterpart flat-plate diode by more than one order of magnitude. This extraordinary performance mainly lies in the higher forward and lower reverse radiative heat flux within the low frequency band compared with the counterpart flat-plate diode, which is caused by a lower loss and smaller cut-off wavevector of nanostructures for the forward and reversed scheme, respectively. This work opens new routes to realize high performance thermal diodes, and may have wide applications in efficient thermal computing, thermal information processing, and thermal management.

Gate-Tunable WSe2/SnSe2 Backward Diode with Ultrahigh-Reverse Rectification Ratio.

PubMed

Murali, Krishna; Dandu, Medha; Das, Sarthak; Majumdar, Kausik

2018-02-14

Backward diodes conduct more efficiently in the reverse bias than in the forward bias, providing superior high-frequency response, temperature stability, radiation hardness, and 1/f noise performance than a conventional diode conducting in the forward direction. Here, we demonstrate a van der Waals material-based backward diode by exploiting the giant staggered band offsets of WSe 2 /SnSe 2 vertical heterojunction. The diode exhibits an ultrahigh-reverse rectification ratio (R) of ∼2.1 × 10 4 , and the same is maintained up to an unusually large bias of 1.5 V-outperforming existing backward diode reports using conventional bulk semiconductors as well as one- and two-dimensional materials by more than an order of magnitude while maintaining an impressive curvature coefficient (γ) of ∼37 V -1 . The transport mechanism in the diode is shown to be efficiently tunable by external gate and drain bias, as well as by the thickness of the WSe 2 layer and the type of metal contacts used. These results pave the way for practical electronic circuit applications using two-dimensional materials and their heterojunctions.

Efficient and bright organic light-emitting diodes on single-layer graphene electrodes

NASA Astrophysics Data System (ADS)

Li, Ning; Oida, Satoshi; Tulevski, George S.; Han, Shu-Jen; Hannon, James B.; Sadana, Devendra K.; Chen, Tze-Chiang

2013-08-01

Organic light-emitting diodes are emerging as leading technologies for both high quality display and lighting. However, the transparent conductive electrode used in the current organic light-emitting diode technologies increases the overall cost and has limited bendability for future flexible applications. Here we use single-layer graphene as an alternative flexible transparent conductor, yielding white organic light-emitting diodes with brightness and efficiency sufficient for general lighting. The performance improvement is attributed to the device structure, which allows direct hole injection from the single-layer graphene anode into the light-emitting layers, reducing carrier trapping induced efficiency roll-off. By employing a light out-coupling structure, phosphorescent green organic light-emitting diodes exhibit external quantum efficiency >60%, while phosphorescent white organic light-emitting diodes exhibit external quantum efficiency >45% at 10,000 cd m-2 with colour rendering index of 85. The power efficiency of white organic light-emitting diodes reaches 80 lm W-1 at 3,000 cd m-2, comparable to the most efficient lighting technologies.

Promoting Robust Design of Diode Lasers for Space: A National Initiative

NASA Technical Reports Server (NTRS)

Tratt, David M.; Amzajerdian, Farzin; Kashem, Nasir B.; Shapiro, Andrew A.; Mense, Allan T.

2007-01-01

The Diode-laser Array Working Group (DAWG) is a national-level consumer/provider forum for discussion of engineering and manufacturing issues which influence the reliability and survivability of high-power broad-area laser diode devices in space, with an emphasis on laser diode arrays (LDAs) for optical pumping of solid-state laser media. The goals of the group are to formulate and validate standardized test and qualification protocols, operational control recommendations, and consensus manufacturing and certification standards. The group is using reliability and lifetime data collected by laser diode manufacturers and the user community to develop a set of standardized guidelines for specifying and qualifying laser diodes for long-duration operation in space, the ultimate goal being to promote an informed U.S. Government investment and procurement strategy for assuring the availability and durability of space-qualified LDAs. The group is also working to establish effective implementation of statistical design techniques at the supplier design, development, and manufacturing levels to help reduce product performance variability and improve product reliability for diodes employed in space applications

Active graphene-silicon hybrid diode for terahertz waves.

PubMed

Li, Quan; Tian, Zhen; Zhang, Xueqian; Singh, Ranjan; Du, Liangliang; Gu, Jianqiang; Han, Jiaguang; Zhang, Weili

2015-05-11

Controlling the propagation properties of the terahertz waves in graphene holds great promise in enabling novel technologies for the convergence of electronics and photonics. A diode is a fundamental electronic device that allows the passage of current in just one direction based on the polarity of the applied voltage. With simultaneous optical and electrical excitations, we experimentally demonstrate an active diode for the terahertz waves consisting of a graphene-silicon hybrid film. The diode transmits terahertz waves when biased with a positive voltage while attenuates the wave under a low negative voltage, which can be seen as an analogue of an electronic semiconductor diode. Here, we obtain a large transmission modulation of 83% in the graphene-silicon hybrid film, which exhibits tremendous potential for applications in designing broadband terahertz modulators and switchable terahertz plasmonic and metamaterial devices.

The Development of High-Density Vertical Silicon Nanowires and Their Application in a Heterojunction Diode.

PubMed

Chang, Wen-Chung; Su, Sheng-Chien; Wu, Chia-Ching

2016-06-30

Vertically aligned p-type silicon nanowire (SiNW) arrays were fabricated through metal-assisted chemical etching (MACE) of Si wafers. An indium tin oxide/indium zinc oxide/silicon nanowire (ITO/IZO/SiNW) heterojunction diode was formed by depositing ITO and IZO thin films on the vertically aligned SiNW arrays. The structural and electrical properties of the resulting ITO/IZO/SiNW heterojunction diode were characterized by field emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD), and current-voltage (I-V) measurements. Nonlinear and rectifying I-V properties confirmed that a heterojunction diode was successfully formed in the ITO/IZO/SiNW structure. The diode had a well-defined rectifying behavior, with a rectification ratio of 550.7 at 3 V and a turn-on voltage of 2.53 V under dark conditions.

Active graphene–silicon hybrid diode for terahertz waves

PubMed Central

Li, Quan; Tian, Zhen; Zhang, Xueqian; Singh, Ranjan; Du, Liangliang; Gu, Jianqiang; Han, Jiaguang; Zhang, Weili

2015-01-01

Controlling the propagation properties of the terahertz waves in graphene holds great promise in enabling novel technologies for the convergence of electronics and photonics. A diode is a fundamental electronic device that allows the passage of current in just one direction based on the polarity of the applied voltage. With simultaneous optical and electrical excitations, we experimentally demonstrate an active diode for the terahertz waves consisting of a graphene–silicon hybrid film. The diode transmits terahertz waves when biased with a positive voltage while attenuates the wave under a low negative voltage, which can be seen as an analogue of an electronic semiconductor diode. Here, we obtain a large transmission modulation of 83% in the graphene–silicon hybrid film, which exhibits tremendous potential for applications in designing broadband terahertz modulators and switchable terahertz plasmonic and metamaterial devices. PMID:25959596

The Adjunctive Soft-Tissue Diode Laser in Orthodontics.

PubMed

Borzabadi-Farahani, Ali

2017-04-01

Lasers are a relatively new addition to the orthodontist's armamentarium. This article reviews the fundamental basic science of available soft-tissue lasers, with an emphasis on diode lasers, and discusses various adjunct applications of the diode laser for soft-tissue orthodontic procedures. Diode lasers function by cutting with an initiated hot tip and produce minimal to no interaction with healthy dental hard tissue, making them suitable for soft-tissue procedures. The contact cutting mode provides enhanced bloodless site visibility and facility to perform delicate soft tissue procedures, which is important in areas with difficult access. Such adjunctive uses include laser gingivectomy to improve oral hygiene or bracket positioning, esthetic laser gingival recontouring, and laser exposure of superficially impacted teeth. Selected cases treated with a 940-nm indium-gallium-arsenide-phosphide (InGaAsP) diode laser will be presented.

Light-emitting diode technology status and directions: Opportunities for horticultural lighting

DOE PAGES

Tsao, Jeffrey Y.; Pattison, P. Morgan; Krames, Michael R.

2016-01-01

Here, light-emitting diode (LED) technology has advanced rapidly over the last decade, primarily driven by display and general illumination applications ("solid-state lighting (SSL) for humans"). These advancements have made LED lighting technically and economically advantageous not only for these applications, but also, as an indirect benefit, for adjacent applications such as horticultural lighting ("SSL for plants"). Moreover, LED technology has much room for continued improvement. In the near-term, these improvements will continue to be driven by SSL for humans (with indirect benefit to SSL for plants), the most important of which can be anticipated.

Hsp70 and ceramide release by diode laser-treated mouse skin cells in vivo

NASA Astrophysics Data System (ADS)

Sokolovskii, G. S.; Onikienko, S. B.; Zemlyanoi, A. V.; Soboleva, K. K.; Pikhtin, N. A.; Tarasov, I. S.; Guzova, I. V.; Margulis, B. A.

2014-12-01

We report experimental study of generation of extracellular heat shock proteins (Hsp70) and ceramides under pulsed irradiation by quantum-well laser diodes. Our results are of great promise for applications in practical medicine such as protection against biopathogenes and abiotic stress factor challenges.

Instrumentation: Photodiode Array Detectors in UV-VIS Spectroscopy. Part II.

ERIC Educational Resources Information Center

Jones, Dianna G.

1985-01-01

A previous part (Analytical Chemistry; v57 n9 p1057A) discussed the theoretical aspects of diode ultraviolet-visual (UV-VIS) spectroscopy. This part describes the applications of diode arrays in analytical chemistry, also considering spectroelectrochemistry, high performance liquid chromatography (HPLC), HPLC data processing, stopped flow, and…

Gate Modulation of Graphene-ZnO Nanowire Schottky Diode.

PubMed

Liu, Ren; You, Xu-Chen; Fu, Xue-Wen; Lin, Fang; Meng, Jie; Yu, Da-Peng; Liao, Zhi-Min

2015-05-06

Graphene-semiconductor interface is important for the applications in electronic and optoelectronic devices. Here we report the modulation of the electric transport properties of graphene/ZnO nanowire Schottky diode by gate voltage (Vg). The ideality factor of the graphene/ZnO nanowire Schottky diode is ~1.7, and the Schottky barrier height is ~0.28 eV without external Vg. The Schottky barrier height is sensitive to Vg due to the variation of Fermi level of graphene. The barrier height increases quickly with sweeping Vg towards the negative value, while decreases slowly towards the positive Vg. Our results are helpful to understand the fundamental mechanism of the electric transport in graphene-semiconductor Schottky diode.

Improving Reliability of High Power Quasi-CW Laser Diode Arrays for Pumping Solid State Lasers

NASA Technical Reports Server (NTRS)

Amzajerdian, Farzin; Meadows, Byron L.; Baker, Nathaniel R.; Barnes, Bruce W.; Baggott, Renee S.; Lockard, George E.; Singh, Upendra N.; Kavaya, Michael J.

2005-01-01

Most Lidar applications rely on moderate to high power solid state lasers to generate the required transmitted pulses. However, the reliability of solid state lasers, which can operate autonomously over long periods, is constrained by their laser diode pump arrays. Thermal cycling of the active regions is considered the primary reason for rapid degradation of the quasi-CW high power laser diode arrays, and the excessive temperature rise is the leading suspect in premature failure. The thermal issues of laser diode arrays are even more drastic for 2-micron solid state lasers which require considerably longer pump pulses compared to the more commonly used pump arrays for 1-micron lasers. This paper describes several advanced packaging techniques being employed for more efficient heat removal from the active regions of the laser diode bars. Experimental results for several high power laser diode array devices will be reported and their performance when operated at long pulsewidths of about 1msec will be described.

Tribotronic Tuning Diode for Active Analog Signal Modulation.

PubMed

Zhou, Tao; Yang, Zhi Wei; Pang, Yaokun; Xu, Liang; Zhang, Chi; Wang, Zhong Lin

2017-01-24

Realizing active interaction with external environment/stimuli is a great challenge for current electronics. In this paper, a tribotronic tuning diode (TTD) is proposed by coupling a variable capacitance diode and a triboelectric nanogenerator in free-standing sliding mode. When the friction layer is sliding on the device surface for electrification, a reverse bias voltage is created and applied to the diode for tuning the junction capacitance. When the sliding distance increases from 0 to 25 mm, the capacitance of the TTD decreases from about 39 to 8 pF. The proposed TTD has been integrated into analog circuits and exhibited excellent performances in frequency modulation, phase shift, and filtering by sliding a finger. This work has demonstrated tunable diode and active analog signal modulation by tribotronics, which has great potential to replace ordinary variable capacitance diodes in various practical applications such as signal processing, electronic tuning circuits, precise tuning circuits, active sensor networks, electronic communications, remote controls, flexible electronics, etc.

Simulated electron affinity tuning in metal-insulator-metal (MIM) diodes

NASA Astrophysics Data System (ADS)

Mistry, Kissan; Yavuz, Mustafa; Musselman, Kevin P.

2017-05-01

Metal-insulator-metal diodes for rectification applications must exhibit high asymmetry, nonlinearity, and responsivity. Traditional methods of improving these figures of merit have consisted of increasing insulator thickness, adding multiple insulator layers, and utilizing a variety of metal contact combinations. However, these methods have come with the price of increasing the diode resistance and ultimately limiting the operating frequency to well below the terahertz regime. In this work, an Airy Function Transfer Matrix simulation method was used to observe the effect of tuning the electron affinity of the insulator as a technique to decrease the diode resistance. It was shown that a small increase in electron affinity can result in a resistance decrease in upwards of five orders of magnitude, corresponding to an increase in operating frequency on the same order. Electron affinity tuning has a minimal effect on the diode figures of merit, where asymmetry improves or remains unaffected and slight decreases in nonlinearity and responsivity are likely to be greatly outweighed by the improved operating frequency of the diode.

Qualification and Selection of Flight Diode Lasers for Space Applications

NASA Technical Reports Server (NTRS)

Liebe, Carl C.; Dillon, Robert P.; Gontijo, Ivair; Forouhar, Siamak; Shapiro, Andrew A.; Cooper, Mark S.; Meras, Patrick L.

2010-01-01

The reliability and lifetime of laser diodes is critical to space missions. The Nuclear Spectroscopic Telescope Array (NuSTAR) mission includes a metrology system that is based upon laser diodes. An operational test facility has been developed to qualify and select, by mission standards, laser diodes that will survive the intended space environment and mission lifetime. The facility is situated in an electrostatic discharge (ESD) certified clean-room and consist of an enclosed temperature-controlled stage that can accommodate up to 20 laser diodes. The facility is designed to characterize a single laser diode, in addition to conducting laser lifetime testing on up to 20 laser diodes simultaneously. A standard laser current driver is used to drive a single laser diode. Laser diode current, voltage, power, and wavelength are measured for each laser diode, and a method of selecting the most adequate laser diodes for space deployment is implemented. The method consists of creating histograms of laser threshold currents, powers at a designated current, and wavelengths at designated power. From these histograms, the laser diodes that illustrate a performance that is outside the normal are rejected and the remaining lasers are considered spaceborne candidates. To perform laser lifetime testing, the facility is equipped with 20 custom laser drivers that were designed and built by California Institute of Technology specifically to drive NuSTAR metrology lasers. The laser drivers can be operated in constant-current mode or alternating-current mode. Situated inside the enclosure, in front of the laser diodes, are 20 power-meter heads to record laser power throughout the duration of lifetime testing. Prior to connecting a laser diode to the current source for characterization and lifetime testing, a background program is initiated to collect current, voltage, and resistance. This backstage data collection enables the operational test facility to have full laser diode traceablity.

Luminescence in Ba2 Sr2 Al2 O7 :RE (RE = Tb(3) (+) ,Eu(3) (+) and Dy(3) (+) ) novel aluminate phosphors.

PubMed

Pardhi, S A; Panse, V R; Dhoble, S J

2016-09-01

The luminescence of novel rare earth (Tb(3) (+) , Eu(3) (+) and Dy(3) (+) )-activated Ba2 Sr2 Al2 O7 phosphors for solid-state lighting is presented. The aluminate phosphors were synthesized using a one-step combustion method. X-Ray diffraction, scanning electron microscopy and photoluminescence characterizations were performed to understand the mechanism of excitation and the corresponding emission in the as-prepared phosphor, as characterized the phase purity and microstructure. Improvements in the luminescence properties of the phosphors with rare earth concentration were observed. The phosphor hue could be tuned from blue, green and red by proper selection of rare earth ions in typical concentrations. Effective absorption in the near-ultraviolet region was observed, which makes the phosphor a potential candidate for ultraviolet light-emitting diodes. Copyright © 2016 John Wiley & Sons, Ltd. Copyright © 2016 John Wiley & Sons, Ltd.

Infrared 7.6-microm lead-salt diode laser heterodyne radiometry of water vapor in a CH4-air premixed flat flame.

PubMed

Weidmann, Damien; Courtois, Daniel

2003-02-20

We deal with the design of a diode laser heterodyne radiometer and its application in a combustion process. We present some experimental results obtained with a CH4-air premised flat flame as the optical source. The goal is to prove that heterodyne detection techniques are relevant in remote detection and diagnostics of combustion and can have important applications in both civil and military fields. To the best of our knowledge, it is the first time that this demonstration is made. The radiometer, in spite of the low-power lead-salt diode laser used as a local oscillator, enables us to record high-temperature water-vapor emission spectra in the region of 1315 cm(-1).

Narrow linewidth diode laser modules for quantum optical sensor applications in the field and in space

NASA Astrophysics Data System (ADS)

Wicht, A.; Bawamia, A.; Krüger, M.; Kürbis, Ch.; Schiemangk, M.; Smol, R.; Peters, A.; Tränkle, G.

2017-02-01

We present the status of our efforts to develop very compact and robust diode laser modules specifically suited for quantum optics experiments in the field and in space. The paper describes why hybrid micro-integration and GaAs-diode laser technology is best suited to meet the needs of such applications. The electro-optical performance achieved with hybrid micro-integrated, medium linewidth, high power distributed-feedback master-oscillator-power-amplifier modules and with medium power, narrow linewidth extended cavity diode lasers emitting at 767 nm and 780 nm are briefly described and the status of space relevant stress tests and space heritage is summarized. We also describe the performance of an ECDL operating at 1070 nm. Further, a novel and versatile technology platform is introduced that allows for integration of any type of laser system or electro-optical module that can be constructed from two GaAs chips. This facilitates, for the first time, hybrid micro-integration, e.g. of extended cavity diode laser master-oscillator-poweramplifier modules, of dual-stage optical amplifiers, or of lasers with integrated, chip-based phase modulator. As an example we describe the implementation of an ECDL-MOPA designed for experiments on ultra-cold rubidium and potassium atoms on board a sounding rocket and give basic performance parameters.

700 W blue fiber-coupled diode-laser emitting at 450 nm

NASA Astrophysics Data System (ADS)

Balck, A.; Baumann, M.; Malchus, J.; Chacko, R. V.; Marfels, S.; Witte, U.; Dinakaran, D.; Ocylok, S.; Weinbach, M.; Bachert, C.; Kösters, A.; Krause, V.; König, H.; Lell, A.; Stojetz, B.; Löffler, A.; Strauss, U.

2018-02-01

A high-power blue laser source was long-awaited for processing materials with low absorption in the near infrared (NIR) spectral range like copper or gold. Due to the huge progress of GaN-based semiconductors, the performance of blue diode-lasers has made a major step forward recently. With the availability of unprecedented power levels at cw-operating blue diode-lasers emitting at 450 nm, it was possible to set up a high-power diode-laser in the blue spectral range to address these conventional laser applications and probably beyond that to establish completely new utilizations for lasers. Within the scope of the research project "BlauLas", funded within the German photonic initiative "EFFILAS" [8] by the German Federal Ministry of Education and Research (BMBF), Laserline in cooperation with OSRAM aims to realize a cw fiber-coupled diode-laser exceeding 1 kW blue laser power. In this paper the conceptual design and experimental results of a 700 W blue fiber-coupled diode-laser are presented. Initially a close look had to be taken on the mounting techniques of the semiconductors to serve the requirements of the GaN laser diodes. Early samples were used for extensive long term tests to investigate degradation processes. With first functional laser-modules we set up fiber-coupled laser-systems for further testing. Besides adaption of well-known optical concepts a main task within the development of the laser system was the selection and examination of suitable materials and assembling in order to minimize degradation and reach adequate lifetimes. We realized R&D blue lasersystems with lifetimes above 5,000 h, which enable first application experiments on processing of various materials as well as experiments on conversion to white-light.

Bioeffect of lipohemia rabbits irradiated in oral mucosa with 650-nm diode-laser-accompanied oxygen inspiration and clinical application

NASA Astrophysics Data System (ADS)

Yang, Fu-Shou; Tang, Jin-Xian; Liu, Cheng; Yang, Xi-Cheng; Pang, Hi-Xiu

1998-11-01

The study on irradiating in oral mucosa of rabbits with 650 nm diode laser and clinical application has been reported in this paper. The result of animal experiment showed: the obvious decrease of cholesterin and triglyceride has been found among those highly lipohemia rabbits in the experiments of 650nm diode laser irradiating accompanying with oxygen, as well as the parameters of hemorheology obviously being improved, as compared with highly lipohemia rabbits un-irradiating, the statistical analysis showing P < 0.01. In the meantime, the observation of histopathology shows, the lipide decreasing in aorta wall, intramyocardinal membranous layer,and renal interstitial in the group of rabbits which are irradiated with laser and accompanying with oxygen inspiration, and even the perfectly recovered tissue in some rabbits has been seen. This experimental result is significantly for clinical application. The results of clinic application showed, that the patients employed this method which treatment cerebral infarction, lipohemia, the total effective ratio achieved 91.7 percent, perfect effect 30.6 percent.

Dye based photodiodes for solar energy applications

NASA Astrophysics Data System (ADS)

Mensah-Darkwa, K.; Ocaya, R.; Dere, A.; Al-Sehemi, Abdullah G.; Al-Ghamdi, Ahmed A.; Soylu, M.; Gupta, R. K.; Yakuphanoglu, F.

2017-10-01

Coumarin (CO) doped methylene blue (MB) organic photo-devices were fabricated. The CO-doped MB (0.00, 0.01, 0.03, 0.05, 0.1 wt% CO) were coated onto the surface of a p-type Si substrate by drop casting method. Some electrical parameters of the devices have been examined by current-voltage ( I- V), capacitance-voltage ( C- V), and conductance-voltage ( G- V) measurements. The fabricated devices had excellent rectifying properties. The diode exhibits a non-ideal diode behavior due to the series resistance and interface layer. The ideality factor, the barrier height, and the series resistance values of the diode as a function of doping and light illumination have been estimated using modified Cheung-Cheung and Norde's method. The highest I photo/ I dark photosensitivity of 5606 was observed for the diode having 0.01 CO doping at 100 mW/cm2 under -3 V. Furthermore, change of capacitance and conductance measurements with frequency is related to the existence of interface states. A maximum power conversion efficiency of 2.4% is estimated for the fabricated devices. The results reveal that coumarin-doped methylene blue/ p-Si heterojunction can be used as a photodiode in optoelectronic applications. It is also usable in low-power photovoltaic applications.

Distributed feedback InGaN/GaN laser diodes

NASA Astrophysics Data System (ADS)

Slight, Thomas J.; Watson, Scott; Yadav, Amit; Grzanka, Szymon; Stanczyk, Szymon; Docherty, Kevin E.; Rafailov, Edik; Perlin, Piotr; Najda, Steve; Leszczyński, Mike; Kelly, Anthony E.

2018-02-01

We have realised InGaN/GaN distributed feedback laser diodes emitting at a single wavelength in the 42X nm wavelength range. Laser diodes based on Gallium Nitride (GaN) are useful devices in a wide range of applications including atomic spectroscopy, data storage and optical communications. To fully exploit some of these application areas there is a need for a GaN laser diode with high spectral purity, e.g. in atomic clocks, where a narrow line width blue laser source can be used to target the atomic cooling transition. Previously, GaN DFB lasers have been realised using buried or surface gratings. Buried gratings require complex overgrowth steps which can introduce epi-defects. Surface gratings designs, can compromise the quality of the p-type contact due to dry etch damage and are prone to increased optical losses in the grating regions. In our approach the grating is etched into the sidewall of the ridge. Advantages include a simpler fabrication route and design freedom over the grating coupling strength.Our intended application for these devices is cooling of the Sr+ ion and for this objective the laser characteristics of SMSR, linewidth, and power are critical. We investigate how these characteristics are affected by adjusting laser design parameters such as grating coupling coefficient and cavity length.

Dosimetric characteristics of a PIN diode for radiotherapy application.

PubMed

Kumar, R; Sharma, S D; Philomina, A; Topkar, A

2014-08-01

The PIN diode developed by Bhabha Atomic Research Centre (BARC) was modified for its use as a dosimeter in radiation therapy. For this purpose the diode was mounted on a printed circuit board (PCB) and provided with necessary connections so that its response against irradiation can be recorded by a standard radiotherapy electrometer. The dosimetric characteristics of the diode were studied in Co-60 gamma rays as well as high energy X-rays. The measured sensitivity of this PIN diode is 4 nC/cGy which is about ten times higher than some commercial diode dosimeters. The leakage current from the diode is 0.04 nA. The response of the PIN diode is linear in the range of 20-1000 cGy which covers the full range of radiation dose encountered in radiotherapy treatments. The non-linearity of the diode response is 3.5% at 20 cGy and it is less than 1.5% at higher dose values. Its repeatability is within 0.5%. The angular response variation is about 5.6% within 6608 with respect to normal beam incidence. The response of the PIN diode at 6 and 18 MV X-rays varies within 2% with respect to its response at Co-60 gamma rays. The source to surface distance (SSD) dependence of the PIN diode was studied for Co-60 beam. It was found that the response of the diode decreases almost linearly relative to given dose for beams with constant collimator setting but increasing SSD (decreasing dose-rate). Within this study the diode response varied by about 2.5% between the maximum and minimum SSD. The dose-rate dependence of the PIN diode for 6 and 15 MV-rays was studied. The variation in response of diode for both energies in the studied dose range is less than 1%. The field size dependence of the PIN diode response is within 1% with respect to the response of ionisation chamber. These studies indicate that the characteristics of the PIN diode are suitable for use in radiotherapy dosimetry.

New approach to the design of Schottky barrier diodes for THz mixers

NASA Technical Reports Server (NTRS)

Jelenski, A.; Grueb, A.; Krozer, V.; Hartnagel, H. L.

1992-01-01

Near-ideal GaAs Schottky barrier diodes especially designed for mixing applications in the THz frequency range are presented. A diode fabrication process for submicron diodes with near-ideal electrical and noise characteristics is described. This process is based on the electrolytic pulse etching of GaAs in combination with an in-situ platinum plating for the formation of the Schottky contacts. Schottky barrier diodes with a diameter of 1 micron fabricated by the process have already shown excellent results in a 650 GHz waveguide mixer at room temperature. A conversion loss of 7.5 dB and a mixer noise temperature of less than 2000 K have been obtained at an intermediate frequency of 4 GHz. The optimization of the diode structure and the technology was possible due to the development of a generalized Schottky barrier diode model which is valid also at high current densities. The common diode design and optimization is discussed on the basis of the classical theory. However, the conventional fomulas are valid only in a limited forward bias range corresponding to currents much smaller than the operating currents under submillimeter mixing conditions. The generalized new model takes into account not only the phenomena occurring at the junction such as current dependent recombination and drift/diffusion velocities, but also mobility and electron temperature variations in the undepleted epi-layer. Calculated diode I/V and noise characteristics are in excellent agreement with the measured values. Thus, the model offers the possibility of optimizing the diode structure and predicting the diode performance under mixing conditions at THz frequencies.

High-power diode laser modules from 410 nm to 2200 nm

NASA Astrophysics Data System (ADS)

Köhler, Bernd; Kissel, Heiko; Flament, Marco; Wolf, Paul; Brand, Thomas; Biesenbach, Jens

2010-02-01

In this work we report on high-power diode laser modules covering a wide spectral range from 410 nm to 2200 nm. Driven by improvements in the technology of diode laser bars with non-standard wavelengths, such systems are finding a growing number of applications. Fields of application that benefit from these developments are direct medical applications, printing industry, defense technology, polymer welding and pumping of solid-sate lasers. Diode laser bars with standard wavelengths from 800 - 1000 nm are based on InGaAlAs, InGaAlP, GaAsP or InGaAs semiconductor material with an optical power of more than 100 W per bar. For shorter wavelengths from 630 - 690 nm InGaAlP semiconductor material is used with an optical power of about 5 W per bar. Extending the wavelength range beyond 1100 nm is realized by using InGaAs on InP substrates or with InAs quantum dots embedded in GaAs for wavelengths up to 1320 nm and (AlGaIn)(AsSb) for wavelengths up to 2200 nm. In these wavelength ranges the output power per bar is about 6 - 20 W. In this paper we present a detailed characterization of these diode laser bars, including measurements of power, spectral data and life time data. In addition, we will show different fiber coupled modules, ranging from 638 nm with 13 W output power (400 μm fiber, NA 0.22) up to 1940 nm with more than 50 W output power (600 μm fiber NA 0.22).

Remote Powering and Steering of Self-Propelling Microdevices by Modulated Electric Field

NASA Astrophysics Data System (ADS)

Sharma, Rachita; Velev, Orlin

2011-03-01

We have demonstrated a new class of self-propelling particles based on semiconductor diodes powered by an external uniform alternating electric field. The millimeter-sized diodes floating in water rectify the applied voltage. The resulting particle-localized electroosmotic flux propels them in the direction of the cathode or the anode depending on their surface charge. These particles suggest solutions to problems facing self-propelling microdevices, and have potential for a range of additional functions. The next step in this direction is the steering of these devices. We will present a novel technique that allows on-demand steering of these self-propelling diodes. We control remotely their direction of motion by modifying the duty cycle of the applied AC field. The diodes change their direction of motion when a DC component (wave asymmetry) is introduced into the AC signal. The DC component leads to redistribution of the counterions near the diode surface. The electric field resulting from this counterion redistribution exerts a torque on the dipole across the diode, causing its rotation. Thus, the reversal of the direction of the electroosmotic flux caused by field asymmetry leads to reversal of the direction of diode motion. This new principle of steering of self-propelling diodes can find applications in MEMs and micro-robotics.

Comparison of the effect of diode laser versus intense pulsed light in axillary hair removal.

PubMed

Ormiga, Patricia; Ishida, Cleide Eiko; Boechat, Alvaro; Ramos-E-Silva, Marcia

2014-10-01

Devices such as diode laser and intense pulsed light (IPL) are in constant development aiming at permanent hair removal, but there are few comparative studies between these technologies. The objective was to comparatively assess axillary hair removal performed by diode laser and IPL and to obtain parameters of referred pain and evolution response for each method. A comparative prospective, double-blind, and randomized study of axillary hair removal performed by the diode laser and IPL was conducted in 21 females. Six sessions were held with application of the diode laser in one axilla and the IPL in the other, with intervals of 30 days and follow-up of 6 months after the last session. Clinical photographs and digital dermoscopy for hair counts in predefined and fixed fields of the treated areas were performed before, 2 weeks after the sixth session, and 6 months after the end of treatment. A questionnaire to assess the pain was applied. The number of hair shafts was significantly reduced with the diode laser and IPL. The diode laser was more effective, although more painful than the IPL. No serious, adverse, or permanent effects were observed with both technologies. Both diode laser and the IPL are effective, safe, and able to produce lasting results in axillary hair removal.

Bandwidth enhancement of monopole antenna with DGS for SHF and reconfigurable structure for WiMAX, WLAN and C-band applications

NASA Astrophysics Data System (ADS)

Beigi, P.; Mohammadi, P.

2017-11-01

In this study a reconfigurable antenna for WiMAX, WLAN, C-bands and SHF applications has been presented. The main body of antenna includes rectangular and L-shaped slotted ground plane and a rectangular patch with slotted feed line, for impedance bandwidth enhancement. In the proposed antenna, a PIN diode is used to adjust the frequency band to SHF, WiMAX, WLAN and C-bands applications. When PIN diode is forward-biased, the antenna covers the 3.5-31 GHz frequency range (i.e. a 160% bandwidth) and when the PIN diode is in its off-state, it operates between 3.4-5.8 GHz. The designed antenna, with a very small size of 12 × 18 × 1.6 mm3, has been fabricated and tested. The radiation pattern is approximately omnidirectional. Simulations and experimental results are in a good agreement with each other and suggest good performance for the presented antenna.

Signal processing and calibration procedures for in situ diode-laser absorption spectroscopy.

PubMed

Werle, P W; Mazzinghi, P; D'Amato, F; De Rosa, M; Maurer, K; Slemr, F

2004-07-01

Gas analyzers based on tunable diode-laser spectroscopy (TDLS) provide high sensitivity, fast response and highly specific in situ measurements of several atmospheric trace gases simultaneously. Under optimum conditions even a shot noise limited performance can be obtained. For field applications outside the laboratory practical limitations are important. At ambient mixing ratios below a few parts-per-billion spectrometers become more and more sensitive towards noise, interference, drift effects and background changes associated with low level signals. It is the purpose of this review to address some of the problems which are encountered at these low levels and to describe a signal processing strategy for trace gas monitoring and a concept for in situ system calibration applicable for tunable diode-laser spectroscopy. To meet the requirement of quality assurance for field measurements and monitoring applications, procedures to check the linearity according to International Standard Organization regulations are described and some measurements of calibration functions are presented and discussed.

Dynamic response of a fiber-optic ring resonator: Analysis with influences of light-source parameters

NASA Astrophysics Data System (ADS)

Seraji, Faramarz E.

2009-03-01

In practice, dynamic behavior of fiber-optic ring resonator (FORR) appears as a detrimental factor to influence the transmission response of the FORR. This paper presents dynamic response analysis of the FORR by considering phase modulation of the FORR loop and sinewave modulation of input signal applied to the FORR from a laser diode. The analysis investigates the influences of modulation frequency and amplitude modulation index of laser diode, loop delay time of the FORR, phase angle between FM and AM response of laser diode, and laser diode line-width on dynamic response of the FORR. The analysis shows that the transient response of the FORR strongly depends on the product of modulation frequency and loop delay time, coupling and transmission coefficients of the FORR. The analyses presented here may have applications in optical systems employing an FORR with a laser diode source.

Pseudo-diode based on protonic/electronic hybrid oxide transistor

NASA Astrophysics Data System (ADS)

Fu, Yang Ming; Liu, Yang Hui; Zhu, Li Qiang; Xiao, Hui; Song, An Ran

2018-01-01

Current rectification behavior has been proved to be essential in modern electronics. Here, a pseudo-diode is proposed based on protonic/electronic hybrid indium-gallium-zinc oxide electric-double-layer (EDL) transistor. The oxide EDL transistors are fabricated by using phosphorous silicate glass (PSG) based proton conducting electrolyte as gate dielectric. A diode operation mode is established on the transistor, originating from field configurable proton fluxes within the PSG electrolyte. Current rectification ratios have been modulated to values ranged between ˜4 and ˜50 000 with gate electrode biased at voltages ranged between -0.7 V and 0.1 V. Interestingly, the proposed pseudo-diode also exhibits field reconfigurable threshold voltages. When the gate is biased at -0.5 V and 0.3 V, threshold voltages are set to ˜-1.3 V and -0.55 V, respectively. The proposed pseudo-diode may find potential applications in brain-inspired platforms and low-power portable systems.

Air-stable memory array of bistable rectifying diodes based on ferroelectric-semiconductor polymer blends

NASA Astrophysics Data System (ADS)

Kumar, Manasvi; Sharifi Dehsari, Hamed; Anwar, Saleem; Asadi, Kamal

2018-03-01

Organic bistable diodes based on phase-separated blends of ferroelectric and semiconducting polymers have emerged as promising candidates for non-volatile information storage for low-cost solution processable electronics. One of the bottlenecks impeding upscaling is stability and reliable operation of the array in air. Here, we present a memory array fabricated with an air-stable amine-based semiconducting polymer. Memory diode fabrication and full electrical characterizations were carried out in atmospheric conditions (23 °C and 45% relative humidity). The memory diodes showed on/off ratios greater than 100 and further exhibited robust and stable performance upon continuous write-read-erase-read cycles. Moreover, we demonstrate a 4-bit memory array that is free from cross-talk with a shelf-life of several months. Demonstration of the stability and reliable air operation further strengthens the feasibility of the resistance switching in ferroelectric memory diodes for low-cost applications.

A photon thermal diode

PubMed Central

Chen, Zhen; Wong, Carlaton; Lubner, Sean; Yee, Shannon; Miller, John; Jang, Wanyoung; Hardin, Corey; Fong, Anthony; Garay, Javier E.; Dames, Chris

2014-01-01

A thermal diode is a two-terminal nonlinear device that rectifies energy carriers (for example, photons, phonons and electrons) in the thermal domain, the heat transfer analogue to the familiar electrical diode. Effective thermal rectifiers could have an impact on diverse applications ranging from heat engines to refrigeration, thermal regulation of buildings and thermal logic. However, experimental demonstrations have lagged far behind theoretical proposals. Here we present the first experimental results for a photon thermal diode. The device is based on asymmetric scattering of ballistic energy carriers by pyramidal reflectors. Recent theoretical work has predicted that this ballistic mechanism also requires a nonlinearity in order to yield asymmetric thermal transport, a requirement of all thermal diodes arising from the second Law of Thermodynamics, and realized here using an ‘inelastic thermal collimator’ element. Experiments confirm both effects: with pyramids and collimator the thermal rectification is 10.9±0.8%, while without the collimator no rectification is detectable (<0.3%). PMID:25399761

The Development of High-Density Vertical Silicon Nanowires and Their Application in a Heterojunction Diode

PubMed Central

Chang, Wen-Chung; Su, Sheng-Chien; Wu, Chia-Ching

2016-01-01

Vertically aligned p-type silicon nanowire (SiNW) arrays were fabricated through metal-assisted chemical etching (MACE) of Si wafers. An indium tin oxide/indium zinc oxide/silicon nanowire (ITO/IZO/SiNW) heterojunction diode was formed by depositing ITO and IZO thin films on the vertically aligned SiNW arrays. The structural and electrical properties of the resulting ITO/IZO/SiNW heterojunction diode were characterized by field emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD), and current−voltage (I−V) measurements. Nonlinear and rectifying I−V properties confirmed that a heterojunction diode was successfully formed in the ITO/IZO/SiNW structure. The diode had a well-defined rectifying behavior, with a rectification ratio of 550.7 at 3 V and a turn-on voltage of 2.53 V under dark conditions. PMID:28773656

Silicon Carbide-Based Hydrogen and Hydrocarbon Gas Detection

NASA Technical Reports Server (NTRS)

Hunter, Gary W.; Neudeck, Philip G.; Chen, Liang-Yu; Knight, D.; Liu, C. C.; Wu, Q. H.R

1995-01-01

Hydrogen and hydrocarbon detection in aeronautical applications is important for reasons of safety and emissions control. The use of silicon carbide as a semiconductor in a metal-semiconductor or metal-insulator-semiconductor structure opens opportunities to measure hydrogen and hydrocarbons in high temperature environments beyond the capabilities of silicon-based devices. The purpose of this paper is to explore the response and stability of Pd-SiC Schottky diodes as gas sensors in the temperature range from 100 to 400 C. The effect of heat treating on the diode properties as measured at 100 C is explored. Subsequent operation at 400 C demonstrates the diodes' sensitivity to hydrogen and hydrocarbons. It is concluded that the Pd-SiC Schottky diode has potential as a hydrogen and hydrocarbon sensor over a wide range of temperatures but further studies are necessary to determine the diodes' long term stability.

Modulation of Quantum Tunneling via a Vertical Two-Dimensional Black Phosphorus and Molybdenum Disulfide p-n Junction.

PubMed

Liu, Xiaochi; Qu, Deshun; Li, Hua-Min; Moon, Inyong; Ahmed, Faisal; Kim, Changsik; Lee, Myeongjin; Choi, Yongsuk; Cho, Jeong Ho; Hone, James C; Yoo, Won Jong

2017-09-26

Diverse diode characteristics were observed in two-dimensional (2D) black phosphorus (BP) and molybdenum disulfide (MoS 2 ) heterojunctions. The characteristics of a backward rectifying diode, a Zener diode, and a forward rectifying diode were obtained from the heterojunction through thickness modulation of the BP flake or back gate modulation. Moreover, a tunnel diode with a precursor to negative differential resistance can be realized by applying dual gating with a solid polymer electrolyte layer as a top gate dielectric material. Interestingly, a steep subthreshold swing of 55 mV/dec was achieved in a top-gated 2D BP-MoS 2 junction. Our simple device architecture and chemical doping-free processing guaranteed the device quality. This work helps us understand the fundamentals of tunneling in 2D semiconductor heterostructures and shows great potential in future applications in integrated low-power circuits.

Building block diode laser concept for high brightness laser output in the kW range and its applications

NASA Astrophysics Data System (ADS)

Ferrario, Fabio; Fritsche, Haro; Grohe, Andreas; Hagen, Thomas; Kern, Holger; Koch, Ralf; Kruschke, Bastian; Reich, Axel; Sanftleben, Dennis; Steger, Ronny; Wallendorf, Till; Gries, Wolfgang

2016-03-01

The modular concept of DirectPhotonics laser systems is a big advantage regarding its manufacturability, serviceability as well as reproducibility. By sticking to identical base components an economic production allows to serve as many applications as possible while keeping the product variations minimal. The modular laser design is based on single emitters and various combining technics. In a first step we accept a reduction of the very high brightness of the single emitters by vertical stacking several diodes in fast axis. This can be theoretically done until the combined fast axis beam quality is on a comparable level as the individual diodes slow axis beam quality without loosing overall beam performance after fiber coupling. Those stacked individual emitters can be wavelength stabilized by an external resonator, providing the very same feedback to each of those laser diodes which leads to an output power of about 100 W with BPP of <3.5 mm*mrad (FA) and <5 mm*mrad (SA). In the next steps, further power scaling is accomplished by polarization and wavelength multiplexing yielding high optical efficiencies of more than 80% and resulting in a building block module with about 500 W launched into a 100 μm fiber with 0.15 NA. Higher power levels can be achieved by stacking those building blocks using the very same dense spectral combing technique up to multi kW Systems without further reduction of the BPP. The 500 W building blocks are consequently designed in a way that they feature a high flexibility with regard to their emitting wavelength bandwidth. Therefore, new wavelengths can be implemented by only exchanging parts and without any additional change of the production process. This design principal theoretically offers the option to adapt the wavelength of those blocks to any applications, from UV, visible into the far IR as long as there are any diodes commercially available. This opens numerous additional applications like laser pumping, scientific applications, materials processing such as cutting and welding of copper aluminum or steel and also medical application. Typical operating at wavelengths in the 9XX nm range, these systems are designed for and mainly used in cutting and welding applications, but adapted wavelength ranges such as 793 nm and 1530 nm are also offered. Around 15XX nm the diodes are already successfully used for resonant pumping of Erbium lasers [1]. Furthermore, the fully integrated electronic concept allows addressing further applications, as due to short lead lengths it is capable of generating very short μs pulses up to cw mode operation by simple software commands.

A CW Gunn Diode Switching Element.

ERIC Educational Resources Information Center

Hurtado, Marco; Rosenbaum, Fred J.

As part of a study of the application of communication satellites to educational development, certain technical aspects of such a system were examined. A current controlled bistable switching element using a CW Gunn diode is reported on here. With modest circuits switching rates of the order of 10 MHz have been obtained. Switching is initiated by…

Solar-energy conversion and light emission in an atomic monolayer p-n diode.

PubMed

Pospischil, Andreas; Furchi, Marco M; Mueller, Thomas

2014-04-01

The limitations of the bulk semiconductors currently used in electronic devices-rigidity, heavy weight and high costs--have recently shifted the research efforts to two-dimensional atomic crystals such as graphene and atomically thin transition-metal dichalcogenides. These materials have the potential to be produced at low cost and in large areas, while maintaining high material quality. These properties, as well as their flexibility, make two-dimensional atomic crystals attractive for applications such as solar cells or display panels. The basic building blocks of optoelectronic devices are p-n junction diodes, but they have not yet been demonstrated in a two-dimensional material. Here, we report a p-n junction diode based on an electrostatically doped tungsten diselenide (WSe2) monolayer. We present applications as a photovoltaic solar cell, a photodiode and a light-emitting diode, and obtain light-power conversion and electroluminescence efficiencies of ∼ 0.5% and ∼ 0.1%, respectively. Given recent advances in the large-scale production of two-dimensional crystals, we expect them to profoundly impact future developments in solar, lighting and display technologies.

Advanced chip designs and novel cooling techniques for brightness scaling of industrial, high power diode laser bars

NASA Astrophysics Data System (ADS)

Heinemann, S.; McDougall, S. D.; Ryu, G.; Zhao, L.; Liu, X.; Holy, C.; Jiang, C.-L.; Modak, P.; Xiong, Y.; Vethake, T.; Strohmaier, S. G.; Schmidt, B.; Zimer, H.

2018-02-01

The advance of high power semiconductor diode laser technology is driven by the rapidly growing industrial laser market, with such high power solid state laser systems requiring ever more reliable diode sources with higher brightness and efficiency at lower cost. In this paper we report simulation and experimental data demonstrating most recent progress in high brightness semiconductor laser bars for industrial applications. The advancements are in three principle areas: vertical laser chip epitaxy design, lateral laser chip current injection control, and chip cooling technology. With such improvements, we demonstrate disk laser pump laser bars with output power over 250W with 60% efficiency at the operating current. Ion implantation was investigated for improved current confinement. Initial lifetime tests show excellent reliability. For direct diode applications <1 um smile and >96% polarization are additional requirements. Double sided cooling deploying hard solder and optimized laser design enable single emitter performance also for high fill factor bars and allow further power scaling to more than 350W with 65% peak efficiency with less than 8 degrees slow axis divergence and high polarization.

Prediction and design of efficient exciplex emitters for high-efficiency, thermally activated delayed-fluorescence organic light-emitting diodes.

PubMed

Liu, Xiao-Ke; Chen, Zhan; Zheng, Cai-Jun; Liu, Chuan-Lin; Lee, Chun-Sing; Li, Fan; Ou, Xue-Mei; Zhang, Xiao-Hong

2015-04-08

High-efficiency, thermally activated delayed-fluorescence organic light-emitting diodes based on exciplex emitters are demonstrated. The best device, based on a TAPC:DPTPCz emitter, shows a high external quantum efficiency of 15.4%. Strategies for predicting and designing efficient exciplex emitters are also provided. This approach allow prediction and design of efficient exciplex emitters for achieving high-efficiency organic light-emitting diodes, for future use in displays and lighting applications. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

885-nm laser diode array pumped ceramic Nd:YAG master oscillator power amplifier system

NASA Astrophysics Data System (ADS)

Yu, Anthony W.; Li, Steven X.; Stephen, Mark A.; Seas, Antonios; Troupaki, Elisavet; Vasilyev, Aleksey; Conley, Heather; Filemyr, Tim; Kirchner, Cynthia; Rosanova, Alberto

2010-04-01

The objective of this effort is to develop more reliable, higher efficiency diode pumped Nd:YAG laser systems for space applications by leveraging technology investments from the DoD and other commercial industries. Our goal is to design, build, test and demonstrate the effectiveness of combining 885 nm laser pump diodes and the use of ceramic Nd:YAG for future flight missions. The significant reduction in thermal loading on the gain medium by the use of 885 nm pump lasers will improve system efficiency.

Si /SiGe n-type resonant tunneling diodes fabricated using in situ hydrogen cleaning

NASA Astrophysics Data System (ADS)

Suet, Z.; Paul, D. J.; Zhang, J.; Turner, S. G.

2007-05-01

In situ hydrogen cleaning to reduce the surface segregation of n-type dopants in SiGe epitaxy has been used to fabricate Si /SiGe resonant tunneling diodes in a joint gas source chemical vapor deposition and molecular beam epitaxial system. Diodes fabricated without the in situ clean demonstrate linear current-voltage characteristics, while a 15min hydrogen clean produces negative differential resistance with peak-to-valley current ratios up to 2.2 and peak current densities of 5.0A/cm2 at 30K. Analysis of the valley current and the band structure of the devices suggest methods for increasing the operating temperature of Si /SiGe resonant tunneling diodes as required for applications.

Development and Application of Novel Diagnostics for Arc-Jet Characterization

NASA Technical Reports Server (NTRS)

Hanson, R. K.

2002-01-01

This NASA-Ames University Consortium Project has focused on the design and demonstration of optical absorption sensors using tunable diode laser to target atomic copper impurities from electrode erosion in thc arc-heater metastable electronic excited states of molecular nitrogen, atomic argon, aid atomic oxygen in the arcjet plume. Accomplishments during this project include: 1. Design, construction, and assembly of optical access to the arc-heater gas flow. 2. Design of diode laser sensor for copper impurities in the arc-heater flow. 3 . Diode laser sensor design and test in laboratory plasmas for metastable Ar(3P), O(5S), N(4P), and N2(A). 4. Diode laser sensor demonstration measurements in the test cell to monitor species in the arc-jet plume.

Semiconductor with protective surface coating and method of manufacture thereof. [Patent application

DOEpatents

Hansen, W.L.; Haller, E.E.

1980-09-19

Passivation of predominantly crystalline semiconductor devices is provided for by a surface coating of sputtered hydrogenated amorphous semiconductor material. Passivation of a radiation detector germanium diode, for example, is realized by sputtering a coating of amorphous germanium onto the etched and quenched diode surface in a low pressure atmosphere of hydrogen and argon. Unlike prior germanium diode semiconductor devices, which must be maintained in vacuum at cryogenic temperatures to avoid deterioration, a diode processed in the described manner may be stored in air at room temperature or otherwise exposed to a variety of environmental conditions. The coating compensates for pre-existing undesirable surface states as well as protecting the semiconductor device against future impregnation with impurities.

High-power fiber-coupled 100W visible spectrum diode lasers for display applications

NASA Astrophysics Data System (ADS)

Unger, Andreas; Küster, Matthias; Köhler, Bernd; Biesenbach, Jens

2013-02-01

Diode lasers in the blue and red spectral range are the most promising light sources for upcoming high-brightness digital projectors in cinemas and large venue displays. They combine improved efficiency, longer lifetime and a greatly improved color space compared to traditional xenon light sources. In this paper we report on high-power visible diode laser sources to serve the demands of this emerging market. A unique electro-optical platform enables scalable fiber coupled sources at 638 nm with an output power of up to 100 W from a 400 μm NA0.22 fiber. For the blue diode laser we demonstrate scalable sources from 5 W to 100 W from a 400 μm NA0.22 fiber.

High power fiber coupled diode lasers for display and lighting applications

NASA Astrophysics Data System (ADS)

Drovs, Simon; Unger, Andreas; Dürsch, Sascha; Köhler, Bernd; Biesenbach, Jens

2017-02-01

The performance of diode lasers in the visible spectral range has been continuously improved within the last few years, which was mainly driven by the goal to replace arc lamps in cinema or home projectors. In addition, the availability of such high power visible diode lasers also enables new applications in the medical field, but also the usage as pump sources for other solid state lasers. This paper summarizes the latest developments of fiber coupled sources with output power from 1.4 W to 120 W coupled into 100 μm to 400 μm fibers in the spectral range around 405 nm and 640 nm. New developments also include the use of fiber coupled multi single emitter arrays at 450 nm, as well as very compact modules with multi-W output power.

Innovative ceramic slab lasers for high power laser applications

NASA Astrophysics Data System (ADS)

Lapucci, Antonio; Ciofini, Marco

2005-09-01

Diode Pumped Solid State Lasers (DPSSL) are gaining increasing interest for high power industrial application, given the continuous improvement in high power diode laser technology reliability and affordability. These sources open new windows in the parameter space for traditional applications such as cutting , welding, marking and engraving for high reflectance metallic materials. Other interesting applications for this kind of sources include high speed thermal printing, precision drilling, selective soldering and thin film etching. In this paper we examine the most important DPSS laser source types for industrial applications and we describe in details the performances of some slab laser configurations investigated at our facilities. The different architectures' advantages and draw-backs are briefly compared in terms of performances, system complexity and ease of scalability to the multi-kW level.

The Effect of Diode Laser With Different Parameters on Root Fracture During Irrigation Procedure.

PubMed

Karataş, Ertuğrul; Arslan, Hakan; Topçuoğlu, Hüseyin Sinan; Yılmaz, Cenk Burak; Yeter, Kübra Yesildal; Ayrancı, Leyla Benan

2016-06-01

The aim of this study is to compare the effect of a single diode laser application and agitation of EDTA with diode laser with different parameters at different time intervals on root fracture. Ninety mandibular incisors were instrumented except the negative control group. The specimens were divided randomly into 10 groups according to final irrigation procedure: (G1) non-instrumented; (G2) distilled water; (G3) 15% EDTA; (G4) ultrasonically agitated EDTA; (G5) single 1.5W/100 Hz Diode laser; (G6) single 3W/100 Hz Diode laser; (G7) 1.5W/100 Hz Diode laser agitation of EDTA for 20 s; (G8) 1.5W/100 Hz Diode laser agitation of EDTA for 40 s; (G9) 3W/100 Hz Diode laser agitation of EDTA for 20 s; and (G10) 3W/100 Hz Diode laser agitation of EDTA for 40 s. The specimens were filled, mounted in acrylic resin, and compression strength test was performed on each specimen. Statistical analysis was carried out using one way ANOVA and Tukey's post hoc tests (P = 0.05). The statistical analysis revealed that there were statistically significant differences among the groups (P < 0.05). Laser-agitated irrigation with a 3W/100 Hz Diode laser for both 20 s and 40 s decreased the fracture resistance of teeth. Copyright © 2015 International Center for Artificial Organs and Transplantation and Wiley Periodicals, Inc.

Metabolic profile of glyburide in human liver microsomes using LC-DAD-Q-TRAP-MS/MS.

PubMed

Ravindran, Selvan; Basu, Sudipta; Gorti, Santosh Kapil Kumar; Surve, Prashant; Sloka, Navya

2013-05-01

The sulfonylurea urea drug glyburide (glibenclamide) is widely used for the treatment of diabetes milletus and gestational diabetes. In previous studies monohydroxylated metabolites were identified and characterized for glyburide in different species, but the metabolite owing to the loss of cyclohexyl ring was identified only in mouse. Glyburide upon incubation with hepatic microsomes resulted in 10 metabolites for human. The current study identifies new metabolites of glyburide along with the hydroxylated metabolites that were reported earlier. The newly identified drug metabolites are dihydroxylated metabolites, a metabolite owing to the loss of cyclohexyl ring and one owing to hydroxylation with dehydrogenation. Among the 10 identified metabolites, there were six monohydroxylated metabolites, one dihydroxylated metabolite, two metabolites owing to hydroxylation and dehydrogenation, and one metabolite owing to the loss of cyclohexyl ring. New metabolites of glyburide were identified and characterized using liquid chromatography-diode array detector-quadruple-ion trap-mass spectrometry/mass spectrometry (LC-DAD-Q-TRAP-MS/MS). An enhanced mass scan-enhanced product ion scan with information-dependent acquisition mode in a Q-TRAP-MS/MS system was used to characterize the metabolites. Liquid chromatography with diode array detection was used as a complimentary technique to confirm and identify the metabolites. Metabolites formed in higher amounts were detected in both diode array detection and mass spectrometry detection. Copyright © 2012 John Wiley & Sons, Ltd.

Wavelength stabilized multi-kW diode laser systems

NASA Astrophysics Data System (ADS)

Köhler, Bernd; Unger, Andreas; Kindervater, Tobias; Drovs, Simon; Wolf, Paul; Hubrich, Ralf; Beczkowiak, Anna; Auch, Stefan; Müntz, Holger; Biesenbach, Jens

2015-03-01

We report on wavelength stabilized high-power diode laser systems with enhanced spectral brightness by means of Volume Holographic Gratings. High-power diode laser modules typically have a relatively broad spectral width of about 3 to 6 nm. In addition the center wavelength shifts by changing the temperature and the driving current, which is obstructive for pumping applications with small absorption bandwidths. Wavelength stabilization of high-power diode laser systems is an important method to increase the efficiency of diode pumped solid-state lasers. It also enables power scaling by dense wavelength multiplexing. To ensure a wide locking range and efficient wavelength stabilization the parameters of the Volume Holographic Grating and the parameters of the diode laser bar have to be adapted carefully. Important parameters are the reflectivity of the Volume Holographic Grating, the reflectivity of the diode laser bar as well as its angular and spectral emission characteristics. In this paper we present detailed data on wavelength stabilized diode laser systems with and without fiber coupling in the spectral range from 634 nm up to 1533 nm. The maximum output power of 2.7 kW was measured for a fiber coupled system (1000 μm, NA 0.22), which was stabilized at a wavelength of 969 nm with a spectral width of only 0.6 nm (90% value). Another example is a narrow line-width diode laser stack, which was stabilized at a wavelength of 1533 nm with a spectral bandwidth below 1 nm and an output power of 835 W.

Temperature issues with white laser diodes, calculation and approach for new packages

NASA Astrophysics Data System (ADS)

Lachmayer, Roland; Kloppenburg, Gerolf; Stephan, Serge

2015-01-01

Bright white light sources are of significant importance for automotive front lighting systems. Today's upper class systems mainly use HID or LED light sources. As a further step laser diode based systems offer a high luminance, efficiency and allow the realization of new dynamic and adaptive light functions and styling concepts. The use of white laser diode systems in automotive applications is still limited to laboratories and prototypes even though announcements of laser based front lighting systems have been made. But the environment conditions for vehicles and other industry sectors differ from laboratory conditions. Therefor a model of the system's thermal behavior is set up. The power loss of a laser diode is transported as thermal flux from the junction layer to the diode's case and on to the environment. Therefor its optical power is limited by the maximum junction temperature (for blue diodes typically 125 - 150 °C), the environment temperature and the diode's packaging with its thermal resistances. In a car's headlamp the environment temperature can reach up to 80 °C. While the difference between allowed case temperature and environment temperature is getting small or negative the relevant heat flux also becomes small or negative. In early stages of LED development similar challenges had to be solved. Adapting LED packages to the conditions in a vehicle environment lead to today's efficient and bright headlights. In this paper the need to transfer these results to laser diodes is shown by calculating the diodes lifetimes based on the presented model.

Photoluminescence properties and energy transfer in Ce(3+) /Dy(3+) co-doped Sr(3) MgSi(2) O(8) phosphors for potential application in ultraviolet white light-emitting diodes.

PubMed

Yu, Hong; Zi, Wenwen; Lan, Shi; Gan, Shucai; Zou, Haifeng; Xu, Xuechun; Hong, Guangyan

2013-01-01

Sr(3) MgSi(2) O(8) :Ce(3+) , Dy(3+) phosphors were prepared by a solid-state reaction technique and the photoluminescence properties were investigated. The emission spectra show not only a band due to Ce(3+) ions (403 nm) but also as a band due to Dy(3+) ions (480, 575 nm) (UV light excitation). The photoluminescence properties reveal that effective energy transfer occurs in Ce(3+) /Dy(3+) co-doped Sr(3) MgSi(2) O(8)phosphors, and the co-doping of Ce(3+) could enhance the emission intensity of Dy(3+) to a certain extent by transferring its energy to Dy(3+) . The Ce(3+) /Dy(3+) energy transfer was investigated by emission/excitation spectra, and photoluminescence decay behaviors. In Sr2.94 MgSi2 O8 :0.01Ce(3+) , 0.05Dy(3+) phosphors, the fluorescence lifetime of Dy(3+) (from 3.35 to 27.59 ns) is increased whereas that of Ce(3+) is greatly decreased (from 43.59 to 13.55 ns), and this provides indirect evidence of the Ce(3+) to Dy(3+) energy transfer. The varied emitted color of Sr(3) MgSi(2) O(8):Ce(3+) , Dy(3+) phosphors from blue to white were achieved by altering the concentration ratio of Ce(3+) and Dy(3+) . These results indicate Sr(3) MgSi(2) O(8):Ce(3+) , Dy(3+) may be as a candidate phosphor for white light-emitting diodes. Copyright © 2012 John Wiley & Sons, Ltd.

808nm high-power high-efficiency GaAsP/GaInP laser bars

NASA Astrophysics Data System (ADS)

Wang, Ye; Yang, Ye; Qin, Li; Wang, Chao; Yao, Di; Liu, Yun; Wang, Lijun

2008-11-01

808nm high power diode lasers, which is rapidly maturing technology technically and commercially since the introduction in 1999 of complete kilowatt-scale diode laser systems, have important applications in the fields of industry and pumping solid-state lasers (DPSSL). High power and high power conversion efficiency are extremely important in diode lasers, and they could lead to new applications where space, weight and electrical power are critical. High efficiency devices generate less waste heat, which means less strain on the cooling system and more tolerance to thermal conductivity variation, a lower junction temperature and longer lifetimes. Diode lasers with Al-free materials have superior power conversion efficiency compared with conventional AlGaAs/GaAs devices because of their lower differential series resistance and higher thermal conductivity. 808nm GaAsP/GaInP broad-waveguide emitting diode laser bars with 1mm cavity length have been fabricated. The peak power can reach to 100.9W at 106.5A at quasicontinuous wave operation (200μs, 1000Hz). The maximum power conversion efficiency is 57.38%. Based on these high power laser bars, we fabricate a 1x3 arrays, the maximum power is 64.3W in continuous wave mode when the current is 25.0A. And the threshold current is 5.9A, the slope efficiency is 3.37 W/A.

Every Good Virtue You Ever Wanted in a Q-switched Solid-state Laser and More: Monolithic, Diode-pumped, Self-q-switched, Highly Reproducible, Diffraction-limited Nd:yag Laser

NASA Technical Reports Server (NTRS)

Chen, Y. C.; Lee, K. K.

1993-01-01

The applications of Q-switched lasers are well known, for example, laser radar, laser remote sensing, satellite orbit determination, Moon orbit and 'moon quake' determination, satellite laser communication, and many nonlinear optics applications. Most of the applications require additional properties of the Q-switched lasers, such as single-axial and/or single-transverse mode, high repetition rate, stable pulse shape and pulse width, or ultra compact and rugged oscillators. Furthermore, space based and airborne lasers for lidar and laser communication applications require efficient, compact, lightweight, long-lived, and stable-pulsed laser sources. Diode-pumped solid-state lasers (DPSSL) have recently shown the potential for satisfying all of these requirements. We will report on the operating characteristics of a diode-pumped, monolithic, self-Q-switched Cr,Nd:YAG laser where the chromium ions act as a saturable absorber for the laser emission at 1064 nm. The pulse duration is 3.5 ns and the output is highly polarized with an extinction ratio of 700:1. It is further shown that the output is single-longitudinal-mode with transform-limited spectral line width without pulse-to-pulse mode competition. Consequently, the pulse-to-pulse intensity fluctuation is less than the instrument resolution of 0.25 percent. This self-stabilization mechanism is because the lasing mode bleaches the distributed absorber and establishes a gain-loss grating similar to that used in the distributed feedback semiconductor lasers. A repetition rate above 5 KHz has also been demonstrated. For higher power, this laser can be used for injection seeding an amplifier (or amplifier chain) or injection locking of a power oscillator pumped by diode lasers. We will discuss some research directions on the master oscillator for higher output energy per pulse as well as how to scale the output power of the diode-pumped amplifier(s) to multi-kilowatt average power.

Next generation high-brightness diode lasers offer new industrial applications

NASA Astrophysics Data System (ADS)

Timmermann, Andre; Meinschien, Jens; Bruns, Peter; Burke, Colin; Bartoschewski, Daniel

2008-02-01

So far, diode laser systems could not compete against CO II-lasers or DPSSL in industrial applications like marking or cutting due to their lower brightness. Recent developments in high-brightness diode laser bars and beam forming systems with micro-optics have led to new direct diode laser applications. LIMO presents 400W output from a 200μm core fibre with an NA of 0.22 at one wavelength. This is achieved via the combination of newly designed laser diode bars on passive heat sinks coupled with optimized micro-optical beam shaping. The laser is water cooled with a housing size of 375mm x 265mm x 70mm. The applications for such diode laser modules are mainly in direct marking, cutting and welding of metals and other materials, but improved pumping of fibre lasers and amplifiers is also possible. The small spot size leads to extremely high intensities and therefore high welding speeds in cw operation. For comparison: The M2 of the fibre output is 70, which gives a comparable beam parameter product (22mm*mrad) to that of a CO II laser with a M2 of 7 because of the wavelength difference. Many metals have a good absorption within the wavelength range of the laser diodes (NIR, 808nm to 980nm), which permits the cutting of thin sheets of aluminium or steel with a 200W version of this laser. First welding tests show reduced splatters and pores owing to the optimized process behaviour in cw operation with short wavelengths. The availability of a top-hat profile proves itself to be advantageous compared to the traditional Gaussian beam profiles of fibre, solid-state and gas lasers in that the laser energy is evenly distributed over the working area. For the future, we can announce an increase of the output power up to 1200W out of a 200μm fibre (0.22 NA). This will be achieved by further sophistication and optimisation of the coupling technique and the coupling of three wavelengths. The beam parameter product will then remain at 22mm*mrad with a power density of 3.8 MW/cm2 if focussed to a 200µm spot. This leads to excellent laser cutting results with extremely small cutting kerfs down to 200μm and very plane cutting edges. Process speeds rise up to more than 10m/min i.e. for thin sheets of stainless steel or titanium.

Influence of Asymmetric Contact Form on Contact Resistance and Schottky Barrier, and Corresponding Applications of Diode.

PubMed

Zhao, Yudan; Xiao, Xiaoyang; Huo, Yujia; Wang, Yingcheng; Zhang, Tianfu; Jiang, Kaili; Wang, Jiaping; Fan, Shoushan; Li, Qunqing

2017-06-07

We have fabricated carbon nanotube and MoS 2 field-effect transistors with asymmetric contact forms of source-drain electrodes, from which we found the current directionality of the devices and different contact resistances under the two current directions. By designing various structures, we can conclude that the asymmetric electrical performance was caused by the difference in the effective Schottky barrier height (Φ SB ) caused by the different contact forms. A detailed temperature-dependent study was used to extract and compare the Φ SB for both contact forms of CNT and MoS 2 devices; we found that the Φ SB for the metal-on-semiconductor form was much lower than that of the semiconductor-on-metal form and is suitable for all p-type, n-type, or ambipolar semiconductors. This conclusion is meaningful with respect to the design and application of nanomaterial electronic devices. Additionally, using the difference in barrier height caused by the contact forms, we have also proposed and fabricated Schottky barrier diodes with a current ratio up to 10 4 ; rectifying circuits consisting of these diodes were able to work in a wide frequency range. This design avoided the use of complex chemical doping or heterojunction methods to achieve fundamental diodes that are relatively simple and use only a single material; these may be suitable for future application in nanoelectronic radio frequency or integrated circuits.

Custom ceramic microchannel-cooled array for high-power fiber-coupled application

NASA Astrophysics Data System (ADS)

Junghans, Jeremy; Feeler, Ryan; Stephens, Ed

2018-03-01

A low-SWaP (Size, Weight and Power) diode array has been developed for a high-power fiber-coupled application. High efficiency ( 65%) diodes enable high optical powers while minimizing thermal losses. A large amount of waste heat is still generated and must be extracted. Custom ceramic microchannel-coolers (MCCs) are used to dissipate the waste heat. The custom ceramic MCC was designed to accommodate long cavity length diodes and micro-lenses. The coolers provide similar thermal performance as copper MCCs however they are not susceptible to erosion and can be cooled with standard filtered water. The custom ceramic micro-channel cooled array was designed to be a form/fit replacement for an existing copperbased solution. Each array consisted of three-vertically stacked MCCs with 4 mm CL, 976 nm diodes and beamshaping micro-optics. The erosion and corrosion resistance of ceramic array is intended to mitigate the risk of copperbased MCC corrosion failures. Elimination of the water delivery requirements (pH, resistivity and dissolved oxygen control) further reduces the system SWaP while maintaining reliability. The arrays were fabricated and fully characterized. This work discusses the advantages of the ceramic MCC technology and describes the design parameters that were tailored for the fiber-coupled application. Additional configuration options (form/fit, micro-lensing, alternate coolants, etc.) and on-going design improvements are also discussed.

Microscale solid-state thermal diodes enabling ambient temperature thermal circuits for energy applications.

PubMed

Wang, Song; Cottrill, Anton L; Kunai, Yuichiro; Toland, Aubrey R; Liu, Pingwei; Wang, Wen-Jun; Strano, Michael S

2017-05-24

Thermal diodes, or devices that transport thermal energy asymmetrically, analogous to electrical diodes, hold promise for thermal energy harvesting and conservation, as well as for phononics or information processing. The junction of a phase change material and phase invariant material can form a thermal diode; however, there are limited constituent materials available for a given target temperature, particularly near ambient. In this work, we demonstrate that a micro and nanoporous polystyrene foam can house a paraffin-based phase change material, fused to PMMA, to produce mechanically robust, solid-state thermal diodes capable of ambient operation with Young's moduli larger than 11.5 MPa and 55.2 MPa above and below the melting transition point, respectively. Moreover, the composites show significant changes in thermal conductivity above and below the melting point of the constituent paraffin and rectification that is well-described by our previous theory and the Maxwell-Eucken model. Maximum thermal rectifications range from 1.18 to 1.34. We show that such devices perform reliably enough to operate in thermal diode bridges, dynamic thermal circuits capable of transforming oscillating temperature inputs into single polarity temperature differences - analogous to an electrical diode bridge with widespread implications for transient thermal energy harvesting and conservation. Overall, our approach yields mechanically robust, solid-state thermal diodes capable of engineering design from a mathematical model of phase change and thermal transport, with implications for energy harvesting.

Dual-Gated MoTe2/MoS2 van der Waals Heterojunction p-n Diode

NASA Astrophysics Data System (ADS)

Rai, Amritesh; Movva, Hema C. P.; Kang, Sangwoo; Larentis, Stefano; Roy, Anupam; Tutuc, Emanuel; Banerjee, Sanjay K.

2D materials are promising for future electronic and optoelectronic applications. In this regard, it is important to realize p-n diodes, the most fundamental building block of all modern semiconductor devices, based on these 2D materials. While it is challenging to achieve homojunction diodes in 2D semiconductors due to lack of reliable selective doping techniques, it is relatively easier to achieve diode-like behavior in van der Waals (vdW) heterostructures comprising different 2D semiconductors. Here, we demonstrate dual-gated vdW heterojunction p-n diodes based on p-type MoTe2 and n-type MoS2, with hBN as the top and bottom gate dielectric. The heterostructure stack is assembled using a polymer-based `dry-transfer' technique. Pt contact is used for hole injection in MoTe2, whereas Ag is used for electron injection in MoS2. The dual-gates allow for independent electrostatic tuning of the carriers in MoTe2 and MoS2. Room temperature interlayer current-voltage characteristics reveal a strong gate-tunable rectification behavior. At low temperatures, the diode turn-on voltage increases, whereas the reverse saturation current decreases, in accordance with conventional p-n diode behavior. Dual-Gated MoTe2/MoS2 van der Waals Heterojunction p-n Diode.

Stackable air-cooled heatsinks for diode lasers

NASA Astrophysics Data System (ADS)

Crum, T. R.; Harrison, J.; Srinivasan, R.; Miller, R. L.

2007-02-01

Micro-channel heatsink assemblies made from bonding multi-layered etched metal sheets are commercially available and are often used for removing the high waste heat loads generated by the operation of diode-laser bars. Typically, a diode-laser bar is bonded onto a micro-channel (also known as mini-channel) heatsink then stacked in an array to create compact high power diode-laser sources for a multitude of applications. Under normal operation, the diode-laser waste heat is removed by passing coolant (typically de-ionized water) through the channels of the heatsink. Because of this, the heatsink internal structure, including path length and overall channel size, is dictated by the liquid coolant properties. Due to the material characteristics of these conductive heatsinks, and the necessary electrically serial stacking geometry, there are several restrictions imparted on the coolant liquid to maintain performance and lifetime. Such systems require carefully monitored and conductive limited de-ionized water, as well as require stable pH levels, and suitable particle filtration. These required coolant systems are either stand alone, or heat exchangers are typically costly and heavy restricting certain applications where minimal weight to power ratios are desired. In this paper, we will baseline the existing water cooled Spectra-Physics Monsoon TM heatsink technology utilizing compressed air, and demonstrate a novel modular stackable heatsink concept for use with gaseous fluids that, in some applications may replace the existing commercially available water-cooled heatsink technology. We will explain the various benefits of utilizing air while maintaining mechanical form factors and packing densities. We will also show thermal-fluid modeling results and predictions as well as operational performance curves for efficiency and power and compare these data to the existing commercially available technology.

Volume CT (VCT) enabled by a novel diode technology

NASA Astrophysics Data System (ADS)

Ikhlef, Aziz; Zeman, Greg; Hoffman, David; Li, Wen; Possin, George

2005-04-01

One of the results of the latest developments in x-ray tube and detector technology, is the enabling of computed tomography (CT) as a strong non-invasive imaging modality for a new set of clinical applications including cardiac and brain imaging. A common theme among the applications is an ability to have wide anatomical coverage in a single rotation. Large coverage in CT is expected to bring significant diagnostic value in clinical field, especially in cardiac, trauma, pediatric, neuro, angiography, Stroke WorkUp and pulmonary applications. This demand, in turn, creates a need for tile-able and scalable detector design. In this paper, we introduce the design of a new diode, a crucial part of the detector, discuss how it enables wide coverage, its performance in terms of cross-talk, light output response, maximized geometric efficiency, and other CT requirements, and compare it to the traditional design which is front-illuminated diode. We ran extensive simulation and measurement experiments to study the geometric efficiency and assess the cross talk and all other performance parameters Critical To Quality (CTQs) with both designs. We modeled x-ray scattering in the scintillator, light scattering through the septa and optical coupler, and electrical cross talk. We tested the design with phantoms and clinical experiments on a scanner (LightSpeed VCT, GE Healthcare Technologies, Waukesha, WI, USA). Our preliminary results indicate that the new diode design performs as well as the traditional in terms of cross talk and other CTQs. It, also, yields better geometric efficiency and enables tile-able detector design, which is crucial for the VCT. We introduced a new diode design, which is an essential enabler for VCT. We demonstrated the new design is superior to the traditional design for the clinically relevant performance measures.

Diode laser to treat small oral vascular malformations: A prospective case series study.

PubMed

Bacci, Christian; Sacchetto, Luca; Zanette, Gastone; Sivolella, Stefano

2018-02-01

The current work examined a consecutive series of patients presenting vascular malformations (VMs) and venous lakes (VLs) of the lip and oral mucosa who were treated with transmucosal diode laser applications and assessed over a 1 year period. Fifty-nine patients (31 males and 28 females) presenting low-flow VMs or VLs of the oral cavity were treated transmucosally using a diode laser (with an 830 nm operating wavelength and 1.6 W output power) with a 320 µm diameter flexible fiber. All the lesions were assessed 7 days, 30 days, and 1 year after the laser treatment, and the lesion reduction percentage was scored on a one to five scale. The patients were also asked to assess their pain perception daily during the 7 days following the treatment using a visual analog scale (VAS). There were no procedure-related intra- or post-operative complications; only modest pain intensity was reported. Thirty days after the treatment, lesion reduction was described as excellent or good in 52 cases; it was fair or poor in 7. Six patients (F:M ratio 2:4) required a second diode laser application. At the 1 year follow-up, volume reduction was complete in 48 out of 59 patients; there were five recurrences (F:M ratio 3:2). No relevant gender-related differences were noted. The use of diode laser application to treat small oral VMs and VLs was associated to shorter operating times and fewer postoperative complications with respect to the scapel surgery approach. More than one session may nevertheless be required if the anomaly is larger than 10 mm. Lasers Surg. Med. 50:111-116, 2018. © 2017 Wiley Periodicals, Inc. © 2017 Wiley Periodicals, Inc.

Controlled feasibility trial comparing the use of 1470nm and 940nm diode laser for the treatment of hyperplastic inferior nasal turbinates

NASA Astrophysics Data System (ADS)

Sroka, Ronald; Havel, Miriam; Leunig, Andreas; Betz, Christian S.

2012-02-01

Introduction: So far various laser systems have been used for volume reduction of hyperplastic nasal turbinates. In case of endonasal application, fiber controlled diode lasers are preferred due to reasons of cost and practicability. The aim of this clinical study was to compare the coagulative tissue effects using either λ=1470nm vs. λ=940nm emitting lasers in treatment of hyperplastic inferior nasal turbinates in an intraindividual manner. Patients and methods: This prospective, randomized, double-blind, clinical feasibility trial included 20 patients suffering from hyperplastic inferior nasal turbinates. In each case, one nasal cavity was treated using 1470nm laser at 4- 5W, the other one with 940nm laser at 12W. Treatment was performed endoscopically controlled in non-contact mode. Clinical presentation and patients symptoms were documented preoperatively and on day 1, 3, 7, 14 and 21 postoperatively using rhinomanometry, standardized questionnaires including SNOT 20 GAV (German adapted version), and separate endoscopic examination respectively. Results: None of the patients showed infections, hemorrhages or other complications occurred intra- or postoperatively. The mean operation time was significantly shorter using the 1470nm diode laser as compared to the 940nm laser, thus lower energy was applied. There was a significant reduction of nasal obstruction on day 21 postoperatively compared to the preoperative condition on both sides regardless of the laser system used. Evaluation of the SNOT-Scores as assessed before and three weeks after surgery showed significant subjective improvements. Conclusion: Compared with standard application of 940nm diode laser, 1470nm diode laser application provides an equivalent tissue reduction in shorter operation time using less total energy and a comparable relief of nasal obstruction postoperatively.

Application of Gaussian beam ray-equivalent model and back-propagation artificial neural network in laser diode fast axis collimator assembly.

PubMed

Yu, Hao; Rossi, Giammarco; Braglia, Andrea; Perrone, Guido

2016-08-10

The paper presents the development of a tool based on a back-propagation artificial neural network to assist in the accurate positioning of the lenses used to collimate the beam from semiconductor laser diodes along the so-called fast axis. After training using a Gaussian beam ray-equivalent model, the network is capable of indicating the tilt, decenter, and defocus of such lenses from the measured field distribution, so the operator can determine the errors with respect to the actual lens position and optimize the diode assembly procedure. An experimental validation using a typical configuration exploited in multi-emitter diode module assembly and fast axis collimating lenses with different focal lengths and numerical apertures is reported.

Practical applications of the diode in dental practice

NASA Astrophysics Data System (ADS)

Moldoveanu, Lucia E.; Odor, Alin A.

2016-03-01

Introduction: The use of lasers has become a practice in modern periodontology and it is a fact that the use of diodes in the dental office can bring a real benefit in periodontal surgery. Material and method: These case reports describe few of various soft tissue procedures that were performed with diode laser 940 nm (Epic 10, Biolase Inc., USA). Discussions: There are a few immediate benefits of the intervention: the "periodontal bandage" belongs to the patient, the procedure is painless, performed under a superficial anesthesia and the psychological impact on the patient, as well as the acceptance, are superior to conventional methods of dentistry. Conclusions: Diode lasers at the level of periodontium have become a significant part of the dentistry, reducing the patient's stress and giving satisfaction to practitioners as well.

Compact modeling of SiC Schottky barrier diode and its extension to junction barrier Schottky diode

NASA Astrophysics Data System (ADS)

Navarro, Dondee; Herrera, Fernando; Zenitani, Hiroshi; Miura-Mattausch, Mitiko; Yorino, Naoto; Jürgen Mattausch, Hans; Takusagawa, Mamoru; Kobayashi, Jun; Hara, Masafumi

2018-04-01

A compact model applicable for both Schottky barrier diode (SBD) and junction barrier Schottky diode (JBS) structures is developed. The SBD model considers the current due to thermionic emission in the metal/semiconductor junction together with the resistance of the lightly doped drift layer. Extension of the SBD model to JBS is accomplished by modeling the distributed resistance induced by the p+ implant developed for minimizing the leakage current at reverse bias. Only the geometrical features of the p+ implant are necessary to model the distributed resistance. Reproduction of 4H-SiC SBD and JBS current-voltage characteristics with the developed compact model are validated against two-dimensional (2D) device-simulation results as well as measurements at different temperatures.

Spectral Narrowing of a Varactor-Integrated Resonant-Tunneling-Diode Terahertz Oscillator by Phase-Locked Loop

NASA Astrophysics Data System (ADS)

Ogino, Kota; Suzuki, Safumi; Asada, Masahiro

2017-12-01

Spectral narrowing of a resonant-tunneling-diode (RTD) terahertz oscillator, which is useful for various applications of terahertz frequency range, such as an accurate gas spectroscopy, a frequency reference in various communication systems, etc., was achieved with a phase-locked loop system. The oscillator is composed of an RTD, a slot antenna, and a varactor diode for electrical frequency tuning. The output of the RTD oscillating at 610 GHz was down-converted to 400 MHz by a heterodyne detection. The phase noise was transformed to amplitude noise by a balanced mixer and fed back into the varactor diode. The loop filter for a stable operation is discussed. The spectral linewidth of 18.6 MHz in free-running operation was reduced to less than 1 Hz by the feedback.

Semiconductor laser devices having lateral refractive index tailoring

DOEpatents

Ashby, Carol I. H.; Hadley, G. Ronald; Hohimer, John P.; Owyoung, Adelbert

1990-01-01

A broad-area semiconductor laser diode includes an active lasing region interposed between an upper and a lower cladding layer, the laser diode further comprising structure for controllably varying a lateral refractive index profile of the diode to substantially compensate for an effect of junction heating during operation. In embodiments disclosed the controlling structure comprises resistive heating strips or non-radiative linear junctions disposed parallel to the active region. Another embodiment discloses a multi-layered upper cladding region selectively disordered by implanted or diffused dopant impurities. Still another embodiment discloses an upper cladding layer of variable thickness that is convex in shape and symmetrically disposed about a central axis of the active region. The teaching of the invention is also shown to be applicable to arrays of semiconductor laser diodes.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Saxberg, Brendan; Plotkin-Swing, Benjamin; Gupta, Subhadeep

We report on a device to electronically stabilize the optical injection lock of a semiconductor diode laser. Our technique uses as discriminator the peak height of the laser’s transmission signal on a scanning Fabry-Perot cavity and feeds back to the diode current, thereby maintaining maximum optical power in the injected mode. A two-component feedback algorithm provides constant optimization of the injection lock, keeping it robust to slow thermal drifts and allowing fast recovery from sudden failures such as temporary occlusion of the injection beam. We demonstrate the successful performance of our stabilization method in a diode laser setup at 399more » nm used for laser cooling of Yb atoms. The device eases the requirements on passive stabilization and can benefit any diode laser injection lock application, particularly those where several such locks are employed.« less

LED intense headband light source for fingerprint analysis

DOEpatents

Villa-Aleman, Eliel

2005-03-08

A portable, lightweight and high-intensity light source for detecting and analyzing fingerprints during field investigation. On-site field analysis requires long hours of mobile analysis. In one embodiment, the present invention comprises a plurality of light emitting diodes; a power source; and a personal attachment means; wherein the light emitting diodes are powered by the power source, and wherein the power source and the light emitting diodes are attached to the personal attachment means to produce a personal light source for on-site analysis of latent fingerprints. The present invention is available for other applications as well.

Application of NIR laser diodes to pulse oximetry

NASA Astrophysics Data System (ADS)

Lopez Silva, Sonnia M.; Giannetti, Romano; Dotor, Maria L.; Sendra, Jose R.; Silveira, Juan P.; Briones, Fernando

1999-01-01

A transmittance pulse oximeter based on near-infrared laser diodes for monitoring arterial blood hemoglobin oxygen saturation has been developed and tested. The measurement system consists of the optical sensor, sensor electronics, acquisition board and personal computer. The system has been tested in a two-part experimental study involving human volunteers. A calibration curve was derived and healthy volunteers were monitored under normal and apnea conditions, both with the proposed system and with a commercial pulse oximeter. The obtained results demonstrate the feasibility of using a sensor with laser diodes emitting at specific near-infrared wavelengths for pulse oximetry.

Evaluation of Fast Switching Diode 1N4448 Over a Wide Temperature Range

NASA Technical Reports Server (NTRS)

Boomer, Kristen; Damron, James; Gray, Josh; Hammoud, Ahmad

2017-01-01

Electronic parts used in the design of power systems geared for space applications are often exposed to extreme temperatures and thermal cycling. Limited data exist on the performance and reliability of commercial-off-the-shelf (COTS) electronic parts at temperatures beyond the manufacturers specified operating temperature range. This report summarizes preliminary results obtained on the evaluation of automotive-grade, fast switching diodes over a wide temperature range and thermal cycling. The investigations were carried out to establish a baseline on functionality of these diodes and to determine suitability for use outside their recommended temperature limits.

Quantum-dot light-emitting diodes utilizing CdSe /ZnS nanocrystals embedded in TiO2 thin film

NASA Astrophysics Data System (ADS)

Kang, Seung-Hee; Kumar, Ch. Kiran; Lee, Zonghoon; Kim, Kyung-Hyun; Huh, Chul; Kim, Eui-Tae

2008-11-01

Quantum-dot (QD) light-emitting diodes (LEDs) are demonstrated on Si wafers by embedding core-shell CdSe /ZnS nanocrystals in TiO2 thin films via plasma-enhanced metallorganic chemical vapor deposition. The n-TiO2/QDs /p-Si LED devices show typical p-n diode current-voltage and efficient electroluminescence characteristics, which are critically affected by the removal of QD surface ligands. The TiO2/QDs /Si system we presented can offer promising Si-based optoelectronic and electronic device applications utilizing numerous nanocrystals synthesized by colloidal solution chemistry.

Tunable diode-laser absorption measurements of methane at elevated temperatures

NASA Astrophysics Data System (ADS)

Nagali, V.; Chou, S. I.; Baer, D. S.; Hanson, R. K.; Segall, J.

1996-07-01

A diode-laser sensor system based on absorption spectroscopy techniques has been developed to monitor CH4 nonintrusively in high-temperature environments. Fundamental spectroscopic parameters, including the line strengths of the transitions in the R(6) manifold of the 2 nu 3 band near 1.646 mu m, have been determined from high-resolution absorption measurements in a heated static cell. In addition, a corrected expression for the CH 4 partition function has been validated experimentally over the temperature range from 400 to 915 K. Potential applications of the diode-laser sensor system include process control, combustion measurements, and atmospheric monitoring.

High-power and highly efficient diode-cladding-pumped holmium-doped fluoride fiber laser operating at 2.94 microm.

PubMed

Jackson, Stuart D

2009-08-01

A high-power diode-cladding-pumped Ho(3+), Pr(3+)-doped fluoride glass fiber laser is demonstrated. The laser produced a maximum output power of 2.5 W at a slope efficiency of 32% using diode lasers emitting at 1,150 nm. The long-emission wavelength of 2.94 microm measured at maximum pump power, which is particularly suited to medical applications, indicates that tailoring of the proportion of Pr(3+) ions can provide specific emission wavelengths while providing sufficient de-excitation of the lower laser level.

Measurement of the fluid-velocity profile using a self-mixing superluminescent diode

NASA Astrophysics Data System (ADS)

Rovati, Luigi; Cattini, Stefano; Palanisamy, Nithiyanantham

2011-02-01

A novel optical Doppler velocimeter using a self-mixing superluminescent diode is proposed and demonstrated. The operation mechanism uses the photodiode on the back-face of a commercial superluminescent diode to detect the Doppler signal from an interferometer. Thanks to the low coherence length of the optical source, the position of the measuring volume can be easily moved into the sample under test by adjusting the reference arm length, thus allowing us to measure the velocity profile of the flowing scatterers even in turbid media. The proposed velocimeter is expected to have several industrial as well as medical applications.

In-pile and out-of-pile testing of a molybdenum-uranium dioxide cermet fueled themionic diode

NASA Technical Reports Server (NTRS)

Diianni, D. C.

1972-01-01

The behavior of Mo-UO2 cermet fuel in a diode for thermionic reactor application was studied. The diode had a Mo-0.5 Ti emitter and niobium collector. Output power ranged from 1.4 to 2.8 W/cm squared at emitter and collector temperatures of 1500 deg and 540 C. Thermionic performance was stable within the limits of the instrumentation sensitivity. Through 1000 hours of in-pile operation the emitter was dimensionally stable. However, some fission gases (15 percent) leaked through an inner clad imperfection that occurred during fuel fabrication.

Precision Spectroscopy, Diode Lasers, and Optical Frequency Measurement Technology

NASA Technical Reports Server (NTRS)

Hollberg, Leo (Editor); Fox, Richard (Editor); Waltman, Steve (Editor); Robinson, Hugh

1998-01-01

This compilation is a selected set of reprints from the Optical Frequency Measurement Group of the Time and Frequency Division of the National Institute of Standards and Technology, and consists of work published between 1987 and 1997. The two main programs represented here are (1) development of tunable diode-laser technology for scientific applications and precision measurements, and (2) research toward the goal of realizing optical-frequency measurements and synthesis. The papers are organized chronologically in five, somewhat arbitrarily chosen categories: Diode Laser Technology, Tunable Laser Systems, Laser Spectroscopy, Optical Synthesis and Extended Wavelength Coverage, and Multi-Photon Interactions and Optical Coherences.

Application of argon atmospheric cold plasma for indium tin oxide (ITO) based diodes

NASA Astrophysics Data System (ADS)

Akbari Nia, S.; Jalili, Y. Seyed; Salar Elahi, A.

2017-09-01

Transparent Conductive Oxide (TCO) layers due to transparency, high conductivity and hole injection capability have attracted a lot of attention. One of these layers is Indium Tin Oxide (ITO). ITO due to low resistance, transparency in the visible spectrum and its proper work function is widely used in the manufacture of organic light emitting diodes and solar cells. One way for improving the ITO surface is plasma treatment. In this paper, changes in surface morphology, by applying argon atmospheric pressure cold plasma, was studied through Atomic Force Microscopic (AFM) image analysis and Fourier Transform Infrared Spectroscopy (FTIR) analysis. FTIR analysis showed functional groups were not added or removed, but chemical bond angle and bonds strength on the surface were changed and also AFM images showed that surface roughness was increased. These factors lead to the production of diodes with enhanced Ohmic contact and injection mechanism which are more appropriate in industrial applications.

Solid state laser systems for space application

NASA Technical Reports Server (NTRS)

Kay, Richard B.

1994-01-01

Since the last report several things have happened to effect the research effort. In laser metrology, measurements using Michelson type interferometers with an FM modulated diode laser source have been performed. The discrete Fourier transform technique has been implemented. Problems associated with this technique as well as the overall FM scheme were identified. The accuracy of the technique is not at the level we would expect at this point. We are now investigating the effect of various types of noise on the accuracy as well as making changes to the system. One problem can be addressed by modifying the original optical layout. Our research effort was also expanded to include the assembly and testing of a diode pumped\\Nd:YAG laser pumped\\Ti sapphire laser for possible use in sounding rocket applications. At this stage, the diode pumped Nd:YAG laser has been assembled and made operational.

Micropulsed diode laser therapy: evolution and clinical applications.

PubMed

Sivaprasad, Sobha; Elagouz, Mohammed; McHugh, Dominic; Shona, Olajumoke; Dorin, Giorgio

2010-01-01

Many clinical trials have demonstrated the clinical efficacy of laser photocoagulation in the treatment of retinal vascular diseases, including diabetic retinopathy. There is, however, collateral iatrogenic retinal damage and functional loss after conventional laser treatment. Such side effects may occur even when the treatment is appropriately performed because of morphological damage caused by the visible endpoint, typically a whitening burn. The development of the diode laser with micropulsed emission has allowed subthreshold therapy without a visible burn endpoint. This greatly reduces the risk of structural and functional retinal damage, while retaining the therapeutic efficacy of conventional laser treatment. Studies using subthreshold micropulse laser protocols have reported successful outcomes for diabetic macular edema, central serous chorioretinopathy, macular edema secondary to retinal vein occlusion, and primary open angle glaucoma. The report includes the rationale and basic principles underlying micropulse diode laser therapy, together with a review of its current clinical applications. Copyright © 2010 Elsevier Inc. All rights reserved.

Preclinical Assessment of a 980-nm Diode Laser Ablation System in a Large Animal Tumor Model

PubMed Central

Ahrar, Kamran; Gowda, Ashok; Javadi, Sanaz; Borne, Agatha; Fox, Matthew; McNichols, Roger; Ahrar, Judy U.; Stephens, Clifton; Stafford, R. Jason

2010-01-01

Purpose To characterize the performance of a 980-nm diode laser ablation system in an in vivo tumor model. Materials and Methods This study was approved by the Institutional Animal Care and Use Committee. The ablation system consisted of a 15-W, 980-nm diode laser, flexible diffusing tipped fiber optic, and 17-gauge internally cooled catheter. Ten immunosuppressed dogs were inoculated subcutaneously with canine transmissible venereal tumor fragments in eight dorsal locations. Laser ablations were performed at 79 sites where inoculations were successful (99%) using powers of 10 W, 12.5 W, and 15 W, with exposure times between 60 and 180 seconds. In 20 cases, multiple overlapping ablations were performed. After the dogs were euthanized, the tumors were harvested, sectioned along the applicator track, measured and photographed. Measurements of ablation zone were performed on gross specimen. Histopathology and viability staining was performed using hematoxylin and eosin (H&E) and nicotinamide adenine dinucleotide hydrogen (NADH) staining. Results Gross pathology confirmed well-circumscribed ablation zone with sharp boundaries between thermally ablated tumor in the center surrounded by viable tumor tissue. When a single applicator was used, the greatest ablation diameters ranged from 12 mm at the lowest dose (10 W, 60 sec) to 26 mm at the highest dose (15 W, 180 sec). Multiple applicators created ablation zones of up to 42 mm in greatest diameter (with the lasers operating at 15 W for 120 sec). Conclusions The new 980-nm diode laser and internally cooled applicator effectively creates large ellipsoid thermal ablations in less than 3 minutes. PMID:20346883

Modeling and Simulation of a 5.8kV SiC PiN Diode for Inductive Pulsed Plasma Thruster Applications

NASA Technical Reports Server (NTRS)

Toftul, Alexandra; Hudgins, Jerry L.; Polzin, Kurt A.; Martin, Adam K.

2014-01-01

Current ringing in an Inductive Pulsed Plasma Thruster (IPPT) can lead to reduced energy efficiency, excess heating, and wear on circuit components such as capacitors and solid state devices. Clamping off the current using a fast turn-off power diode is an effective way to reduce current ringing and increase energy efficiency. A diode with a shorter reverse recovery time will allow the least amount of current to ring back through the circuit, as well as minimize switching losses. The reverse recovery response of a new 5.8 kilovolt SiC PiN diode from Cree, Inc. in the IPPT plasma drive circuit is investigated using a physicsbased Simulink model, and compared with that of a 5SDF 02D6004 5.5 kilovolt fast-switching Si diode from ABB. Parameter extraction was carried out for each diode using both datasheet specifications and experimental waveforms, in order to most accurately adapt the model to the specific device. Further experimental data will be discussed using a flat-plate IPPT developed at NASA Marshall Space Flight Center and used to verify the simulation results. A final quantitative measure of circuit efficiency will be described for both the Si and SiC diode configuration.

Fabrication and characterization of magnetically tunable metal-semiconductor schottky diode using barium hexaferrite thin film on gold

NASA Astrophysics Data System (ADS)

Kaur, Jotinder; Sharma, Vinay; Sharma, Vipul; Veerakumar, V.; Kuanr, Bijoy K.

2016-05-01

Barium Hexaferrite (BaM) is an extensively studied magnetic material due to its potential device application. In this paper, we study Schottky junction diodes fabricated using gold and BaM and demonstrate the function of a spintronic device. Gold (50 nm)/silicon substrate was used to grow the BaM thin films (100-150 nm) using pulsed laser deposition. I-V characteristics were measured on the Au/BaM structure sweeping the voltage from ±5 volts. The forward and reverse bias current-voltage curves show diode like rectifying characteristics. The threshold voltage decreases while the output current increases with increase in the applied external magnetic field showing that the I-V characteristics of the BaM based Schottky junction diodes can be tuned by external magnetic field. It is also demonstrated that, the fabricated Schottky diode can be used as a half-wave rectifier, which could operate at high frequencies in the range of 1 MHz compared to the regular p-n junction diodes, which rectify below 10 kHz. In addition, it is found that above 1 MHz, Au/BaM diode can work as a rectifier as well as a capacitor filter, making the average (dc) voltage much larger.

Light extraction from organic light-emitting diodes for lighting applications by sand-blasting substrates.

PubMed

Chen, Shuming; Kwok, Hoi Sing

2010-01-04

Light extraction from organic light-emitting diodes (OLEDs) by scattering the light is one of the effective methods for large-area lighting applications. In this paper, we present a very simple and cost-effective method to rough the substrates and hence to scatter the light. By simply sand-blasting the edges and back-side surface of the glass substrates, a 20% improvement of forward efficiency has been demonstrated. Moreover, due to scattering effect, a constant color over all viewing angles and uniform light pattern with Lambertian distribution has been obtained. This simple and cost-effective method may be suitable for mass production of large-area OLEDs for lighting applications.

Contact diode laser application through a fiberoptic cutting tip.

PubMed

Peyman, G A; Cruz, S A; Ruiz-Lapuente, C

1991-01-01

We applied diode laser energy through a fiberoptic probe to cut ocular structures. The diameter of the probe's tip was 100 microns. The amount of energy used for cutting the lid, the cornea, or for perforation of the glove was 2.5 watts in the continuous mode. The incised border demonstrated coagulation into the healthy tissue ranging from 10 to 50 microns.

Experimental research on time-resolved evolution of cathode plasma expansion velocity in a long pulsed magnetically insulated coaxial diode

NASA Astrophysics Data System (ADS)

Zhu, Danni; Zhang, Jun; Zhong, Huihuang; Ge, Xingjun; Gao, Jingming

2018-02-01

Unlike planar diodes, separate research of the axial and radial plasma expansion velocities is difficult for magnetically insulated coaxial diodes. Time-resolved electrical diagnostic which is based on the voltage-ampere characteristics has been employed to study the temporal evolution of the axial and radial cathode plasma expansion velocities in a long pulsed magnetically insulated coaxial diode. Different from a planar diode with a "U" shaped profile of temporal velocity evolution, the temporal evolution trend of the axial expansion velocity is proved to be a "V" shaped profile. Apart from the suppression on the radial expansion velocity, the strong magnetic field is also conducive to slowing down the axial expansion velocity. Compared with the ordinary graphite cathode, the carbon velvet and graphite composite cathode showed superior characteristics as judged by the low plasma expansion velocity and long-term electrical stability as a promising result for applications where long-pulsed and reliable operation at high power is required.

Solid Sampling with a Diode Laser for Portable Ambient Mass Spectrometry

PubMed Central

2017-01-01

A hand-held diode laser is implemented for solid sampling in portable ambient mass spectrometry (MS). Specifically, a pseudocontinuous wave battery-powered surgical laser diode is employed for portable laser diode thermal desorption (LDTD) at 940 nm and compared with nanosecond pulsed laser ablation at 2940 nm. Postionization is achieved in both cases using atmospheric pressure photoionization (APPI). The laser ablation atmospheric pressure photoionization (LAAPPI) and LDTD-APPI mass spectra of sage leaves (Salvia officinalis) using a field-deployable quadrupole ion trap MS display many similar ion peaks, as do the mass spectra of membrane grown biofilms of Pseudomonas aeruginosa. These results indicate that LDTD-APPI method should be useful for in-field sampling of plant and microbial communities, for example, by portable ambient MS. The feasibility of many portable MS applications is facilitated by the availability of relatively low cost, portable, battery-powered diode lasers. LDTD could also be coupled with plasma- or electrospray-based ionization for the analysis of a variety of solid samples. PMID:28632988

Solid Sampling with a Diode Laser for Portable Ambient Mass Spectrometry.

PubMed

Yung, Yeni P; Wickramasinghe, Raveendra; Vaikkinen, Anu; Kauppila, Tiina J; Veryovkin, Igor V; Hanley, Luke

2017-07-18

A hand-held diode laser is implemented for solid sampling in portable ambient mass spectrometry (MS). Specifically, a pseudocontinuous wave battery-powered surgical laser diode is employed for portable laser diode thermal desorption (LDTD) at 940 nm and compared with nanosecond pulsed laser ablation at 2940 nm. Postionization is achieved in both cases using atmospheric pressure photoionization (APPI). The laser ablation atmospheric pressure photoionization (LAAPPI) and LDTD-APPI mass spectra of sage leaves (Salvia officinalis) using a field-deployable quadrupole ion trap MS display many similar ion peaks, as do the mass spectra of membrane grown biofilms of Pseudomonas aeruginosa. These results indicate that LDTD-APPI method should be useful for in-field sampling of plant and microbial communities, for example, by portable ambient MS. The feasibility of many portable MS applications is facilitated by the availability of relatively low cost, portable, battery-powered diode lasers. LDTD could also be coupled with plasma- or electrospray-based ionization for the analysis of a variety of solid samples.

Flexible and twistable non-volatile memory cell array with all-organic one diode-one resistor architecture.

PubMed

Ji, Yongsung; Zeigler, David F; Lee, Dong Su; Choi, Hyejung; Jen, Alex K-Y; Ko, Heung Cho; Kim, Tae-Wook

2013-01-01

Flexible organic memory devices are one of the integral components for future flexible organic electronics. However, high-density all-organic memory cell arrays on malleable substrates without cross-talk have not been demonstrated because of difficulties in their fabrication and relatively poor performances to date. Here we demonstrate the first flexible all-organic 64-bit memory cell array possessing one diode-one resistor architectures. Our all-organic one diode-one resistor cell exhibits excellent rewritable switching characteristics, even during and after harsh physical stresses. The write-read-erase-read output sequence of the cells perfectly correspond to the external pulse signal regardless of substrate deformation. The one diode-one resistor cell array is clearly addressed at the specified cells and encoded letters based on the standard ASCII character code. Our study on integrated organic memory cell arrays suggests that the all-organic one diode-one resistor cell architecture is suitable for high-density flexible organic memory applications in the future.

Cavity-Enhanced Raman Spectroscopy of Natural Gas with Optical Feedback cw-Diode Lasers.

PubMed

Hippler, Michael

2015-08-04

We report on improvements made on our previously introduced technique of cavity-enhanced Raman spectroscopy (CERS) with optical feedback cw-diode lasers in the gas phase, including a new mode-matching procedure which keeps the laser in resonance with the optical cavity without inducing long-term frequency shifts of the laser, and using a new CCD camera with improved noise performance. With 10 mW of 636.2 nm diode laser excitation and 30 s integration time, cavity enhancement achieves noise-equivalent detection limits below 1 mbar at 1 bar total pressure, depending on Raman cross sections. Detection limits can be easily improved using higher power diodes. We further demonstrate a relevant analytical application of CERS, the multicomponent analysis of natural gas samples. Several spectroscopic features have been identified and characterized. CERS with low power diode lasers is suitable for online monitoring of natural gas mixtures with sensitivity and spectroscopic selectivity, including monitoring H2, H2S, N2, CO2, and alkanes.

Silicon Carbide Diodes Performance Characterization at High Temperatures

NASA Technical Reports Server (NTRS)

Lebron-Velilla, Ramon C.; Schwarze, Gene E.; Gardner, Brent G.; Adams, Jerry

2004-01-01

NASA Glenn Research center's Electrical Systems Development branch is working to demonstrate and test the advantages of Silicon Carbide (SiC) devices in actual power electronics applications. The first step in this pursuit is to obtain commercially available SiC Schottky diodes and to individually test them under both static and dynamic conditions, and then compare them with current state of the art silicon Schottky and ultra fast p-n diodes of similar voltage and current ratings. This presentation covers the results of electrical tests performed at NASA Glenn. Steady state forward and reverse current-volt (I-V) curves were generated for each device to compare performance and to measure their forward voltage drop at rated current, as well as the reverse leakage current at rated voltage. In addition, the devices were individually connected as freewheeling diodes in a Buck (step down) DC to DC converter to test their reverse recovery characteristics and compare their transient performance in a typical converter application. Both static and transient characterization tests were performed at temperatures ranging from 25 C to 300 C, in order to test and demonstrate the advantages of SiC over Silicon at high temperatures.

A novel miniature dynamic microfluidic cell culture platform using electro-osmosis diode pumping.

PubMed

Chang, Jen-Yung; Wang, Shuo; Allen, Jeffrey S; Lee, Seong Hyuk; Chang, Suk Tai; Choi, Young-Ki; Friedrich, Craig; Choi, Chang Kyoung

2014-07-01

An electro-osmosis (EOS) diode pumping platform capable of culturing cells in fluidic cellular micro-environments particularly at low volume flow rates has been developed. Diode pumps have been shown to be a viable alternative to mechanically driven pumps. Typically electrokinetic micro-pumps were limited to low-concentration solutions (≤10 mM). In our approach, surface mount diodes were embedded along the sidewalls of a microchannel to rectify externally applied alternating current into pulsed direct current power across the diodes in order to generate EOS flows. This approach has for the first time generated flows at ultra-low flow rates (from 2.0 nl/s to 12.3 nl/s) in aqueous solutions with concentrations greater than 100 mM. The range of flow was generated by changing the electric field strength applied to the diodes from 0.5 Vpp/cm to 10 Vpp/cm. Embedding an additional diode on the upper surface of the enclosed microchannel increased flow rates further. We characterized the diode pump-driven fluidics in terms of intensities and frequencies of electric inputs, pH values of solutions, and solution types. As part of this study, we found that the growth of A549 human lung cancer cells was positively affected in the microfluidic diode pumping system. Though the chemical reaction compromised the fluidic control overtime, the system could be maintained fully functional over a long time if the solution was changed every hour. In conclusion, the advantage of miniature size and ability to accurately control fluids at ultra-low volume flow rates can make this diode pumping system attractive to lab-on-a-chip applications and biomedical engineering in vitro studies.

A novel miniature dynamic microfluidic cell culture platform using electro-osmosis diode pumping

PubMed Central

Chang, Jen-Yung; Wang, Shuo; Allen, Jeffrey S.; Lee, Seong Hyuk; Chang, Suk Tai; Choi, Young-Ki; Friedrich, Craig; Choi, Chang Kyoung

2014-01-01

An electro-osmosis (EOS) diode pumping platform capable of culturing cells in fluidic cellular micro-environments particularly at low volume flow rates has been developed. Diode pumps have been shown to be a viable alternative to mechanically driven pumps. Typically electrokinetic micro-pumps were limited to low-concentration solutions (≤10 mM). In our approach, surface mount diodes were embedded along the sidewalls of a microchannel to rectify externally applied alternating current into pulsed direct current power across the diodes in order to generate EOS flows. This approach has for the first time generated flows at ultra-low flow rates (from 2.0 nl/s to 12.3 nl/s) in aqueous solutions with concentrations greater than 100 mM. The range of flow was generated by changing the electric field strength applied to the diodes from 0.5 Vpp/cm to 10 Vpp/cm. Embedding an additional diode on the upper surface of the enclosed microchannel increased flow rates further. We characterized the diode pump-driven fluidics in terms of intensities and frequencies of electric inputs, pH values of solutions, and solution types. As part of this study, we found that the growth of A549 human lung cancer cells was positively affected in the microfluidic diode pumping system. Though the chemical reaction compromised the fluidic control overtime, the system could be maintained fully functional over a long time if the solution was changed every hour. In conclusion, the advantage of miniature size and ability to accurately control fluids at ultra-low volume flow rates can make this diode pumping system attractive to lab-on-a-chip applications and biomedical engineering in vitro studies. PMID:25379101

Frequency stabilization of diode-laser-pumped solid state lasers

NASA Technical Reports Server (NTRS)

Byer, Robert L.

1988-01-01

The goal of the NASA Sunlite program is to fly two diode-laser-pumped solid-state lasers on the space shuttle and while doing so to perform a measurement of their frequency stability and temporal coherence. These measurements will be made by combining the outputs of the two lasers on an optical radiation detector and spectrally analyzing the beat note. Diode-laser-pumped solid-state lasers have several characteristics that will make them useful in space borne experiments. First, this laser has high electrical efficiency. Second, it is of a technology that enables scaling to higher powers in the future. Third, the laser can be made extremely reliable, which is crucial for many space based applications. Fourth, they are frequency and amplitude stable and have high temporal coherence. Diode-laser-pumped solid-state lasers are inherently efficient. Recent results have shown 59 percent slope efficiency for a diode-laser-pumped solid-state laser. As for reliability, the laser proposed should be capable of continuous operation. This is possible because the diode lasers can be remote from the solid state gain medium by coupling through optical fibers. Diode lasers are constructed with optical detectors for monitoring their output power built into their mounting case. A computer can actively monitor the output of each diode laser. If it sees any variation in the output power that might indicate a problem, the computer can turn off that diode laser and turn on a backup diode laser. As for stability requirements, it is now generally believed that any laser can be stabilized if the laser has a frequency actuator capable of tuning the laser frequency as far as it is likely to drift in a measurement time.

To compare the gingival melanin repigmentation after diode laser application and surgical removal.

PubMed

Mahajan, Gaurav; Kaur, Harjit; Jain, Sanjeev; Kaur, Navnit; Sehgal, Navneet Kaur; Gautam, Aditi

2017-01-01

The aim of the present study is to compare the gingival melanin repigmentation after diode laser application and surgical removal done by scraping with Kirkland knife. This study was a randomized split-mouth study where 10 patients presenting with unattractive, diffuse, dark brown to black gingival discoloration on the facial aspect of the maxillary gingiva were treated by diode laser application and surgical removal and followed up for 3-, 6-, and 9-month intervals. The results showed a statistically significant difference in repigmentation between the groups at the interval of 3 months ( P = 0.040), but the difference was statistically not significant at 6 months ( P = 0.118) and 9 months ( P = 0.146). On surgically treated sites, all cases showed repigmentation of the gingiva, but in laser treated, there were two individuals which did not show repigmentation of the gingiva even at the end of 9-month observation time. The incidence of repigmentation was slightly less in laser-treated sites as compared to surgical depigmentation although the difference was statistically significant only up to 3 months.

Human expiration content diagnostics by tunable diode lasers in middle infrared

NASA Astrophysics Data System (ADS)

Kouznetsov, Andrian I.; Moskalenko, Konstantin L.; Nadezhdinskii, Alexander I.; Stepanov, Eugene V.

1992-04-01

Results on the application of tunable diode laser gas analysis to determining the trace components of human breath are presented. Schemes of the analyzers specially developed for measurement of both carbon oxides in expiration are described. A few results illuminating possible applications of TDL in high sensitive medical diagnostics have been obtained. For nonsmokers, the expired concentration of CO is slightly higher than inhaled air. Specific surplus value depends on the person's age. The surplus CO content increased significantly just after intensive physical exercises like jogging. For smokers, the farmacokinetical curve of abundant CO removal from the organism could be investigated. The smoking status of tested individuals becomes easy available. Breath-hold simultaneous measurements of CO and CO2 have shown the difference in the dependencies of their concentrations on breath-holding time. The possibility to investigate phenomena like molecular pulmonary diffusion of the alveolar-capillary membrane and an organism's compensation reactions to oxygen shortage seems to become real. Perspective leads for development and the application of diode laser spectroscopy methods to the analysis of gaseous microimpurities in medicine are also discussed.

Novel power MOSFET-based expander for high frequency ultrasound systems.

PubMed

Choi, Hojong; Shung, K Kirk

2014-01-01

The function of an expander is to obstruct the noise signal transmitted by the pulser so that it does not pass into the transducer or receive electronics, where it can produce undesirable ring-down in an ultrasound imaging application. The most common type is a diode-based expander, which is essentially a simple diode-pair, is widely used in pulse-echo measurements and imaging applications because of its simple architecture. However, diode-based expanders may degrade the performance of ultrasonic transducers and electronic components on the receiving and transmitting sides of the ultrasound systems, respectively. Since they are non-linear devices, they cause excessive signal attenuation and noise at higher frequencies and voltages. In this paper, a new type of expander that utilizes power MOSFET components, which we call a power MOSFET-based expander, is introduced and evaluated for use in high frequency ultrasound imaging systems. The performance of a power MOSFET-based expander was evaluated relative to a diode-based expander by comparing the noise figure (NF), insertion loss (IL), total harmonic distortion (THD), response time (RT), electrical impedance (EI) and dynamic power consumption (DPC). The results showed that the power MOSFET-based expander provided better NF (0.76 dB), IL (-0.3 dB) and THD (-62.9 dB), and faster RT (82 ns) than did the diode-based expander (NF (2.6 dB), IL (-1.4 dB), THD (-56.0 dB) and RT (119 ns)) at 70 MHz. The -6 dB bandwidth and the peak-to-peak voltage of the echo signal received by the transducer using the power MOSFET-based expander improved by 17.4% and 240% compared to the diode-based expander, respectively. The new power MOSFET-based expander was shown to yield lower NF, IL and THD, faster RT and lower ring down than the diode-based expander at the expense of higher dynamic power consumption. Copyright © 2013 Elsevier B.V. All rights reserved.

Novel Power MOSFET-Based Expander for High Frequency Ultrasound Systems

PubMed Central

Choi, Hojong; Shung, K. Kirk

2014-01-01

The function of an expander is to obstruct the noise signal transmitted by the pulser so that it does not pass into the transducer or receive electronics, where it can produce undesirable ring-down in an ultrasound imaging application. The most common type is a diode-based expander, which is essentially a simple diode-pair, is widely used in pulse-echo measurements and imaging applications because of its simple architecture. However, diode-based expanders may degrade the performance of ultrasonic transducers and electronic components on the receiving and transmitting sides of the ultrasound systems, respectively. Since they are non-linear devices, they cause excessive signal attenuation and noise at higher frequencies and voltages. In this paper, a new type of expander that utilizes power MOSFET components, which we call a power MOSFET-based expander, is introduced and evaluated for use in high frequency ultrasound imaging systems. The performance of a power MOSFET-based expander was evaluated relative to a diode-based expander by comparing the noise figure (NF), insertion loss (IL), total harmonic distortion (THD), response time (RT), electrical impedance (EI) and dynamic power consumption (DPC). The results showed that the power MOSFET-based expander provided better NF (0.76 dB), IL (-0.3 dB) and THD (-62.9 dB), and faster RT (82 ns) than did the diode-based expander (NF (2.6 dB), IL (-1.4 dB), THD (-56.0 dB) and RT (119 ns)) at 70 MHz. The -6 dB bandwidth and the peak-to-peak voltage of the echo signal received by the transducer using the power MOSFET-based expander improved by 17.4 % and 240 % compared to the diode-based expander, respectively. The new power MOSFET-based expander was shown to yield lower NF, IL and THD, faster RT and lower ring down than the diode-based expander at the expense of higher dynamic power consumption. PMID:23835308

Evaluation of the dosimetric properties of a diode detector for small field proton radiosurgery.

PubMed

McAuley, Grant A; Teran, Anthony V; Slater, Jerry D; Slater, James M; Wroe, Andrew J

2015-11-08

The small fields and sharp gradients typically encountered in proton radiosurgery require high spatial resolution dosimetric measurements, especially below 1-2 cm diameters. Radiochromic film provides high resolution, but requires postprocessing and special handling. Promising alternatives are diode detectors with small sensitive volumes (SV) that are capable of high resolution and real-time dose acquisition. In this study we evaluated the PTW PR60020 proton dosimetry diode using radiation fields and beam energies relevant to radiosurgery applications. Energies of 127 and 157 MeV (9.7 to 15 cm range) and initial diameters of 8, 10, 12, and 20mm were delivered using single-stage scattering and four modulations (0, 15, 30, and 60mm) to a water tank in our treatment room. Depth dose and beam profile data were compared with PTW Markus N23343 ionization chamber, EBT2 Gafchromic film, and Monte Carlo simulations. Transverse dose profiles were measured using the diode in "edge-on" orientation or EBT2 film. Diode response was linear with respect to dose, uniform with dose rate, and showed an orientation-dependent (i.e., beam parallel to, or perpendicular to, detector axis) response of less than 1%. Diodevs. Markus depth-dose profiles, as well as Markus relative dose ratio vs. simulated dose-weighted average lineal energy plots, suggest that any LET-dependent diode response is negligible from particle entrance up to the very distal portion of the SOBP for the energies tested. Finally, while not possible with the ionization chamber due to partial volume effects, accurate diode depth-dose measurements of 8, 10, and 12 mm diameter beams were obtained compared to Monte Carlo simulations. Because of the small SV that allows measurements without partial volume effects and the capability of submillimeter resolution (in edge-on orientation) that is crucial for small fields and high-dose gradients (e.g., penumbra, distal edge), as well as negligible LET dependence over nearly the full the SOBP, the PTW proton diode proved to be a useful high-resolution, real-time metrology device for small proton field radiation measurements such as would be encountered in radiosurgery applications.

Clinical assessment of diode laser-assisted endoscopic intrasphenoidal vidian neurectomy in the treatment of refractory rhinitis.

PubMed

Lai, Wen-Sen; Cheng, Sheng-Yao; Lin, Yuan-Yung; Yang, Pei-Lin; Lin, Hung-Che; Cheng, Li-Hsiang; Yang, Jinn-Moon; Lee, Jih-Chin

2017-12-01

For chronic rhinitis that is refractory to medical therapy, surgical intervention such as endoscopic vidian neurectomy (VN) can be used to control the intractable symptoms. Lasers can contribute to minimizing the invasiveness of ENT surgery. The aim of this retrospective study is to compare in patients who underwent diode laser-assisted versus traditional VN in terms of operative time, surgical field, quality of life, and postoperative complications. All patients had refractory rhinitis with a poor treatment response to a 6-month trial of corticosteroid nasal sprays and underwent endoscopic VN between November 2006 and September 2015. They were non-randomly allocated into either a cold instrument group or a diode laser-assisted group. Vidian nerve was excised with a 940-nm continuous wave diode laser through a 600-μm silica optical fiber, utilizing a contact mode with the power set at 5 W. A visual analog scale (VAS) was used to grade the severity of the rhinitis symptoms for quality of life assessment before the surgery and 6 months after. Of the 118 patients enrolled in the study, 75 patients underwent cold instrument VN and 43 patients underwent diode laser-assisted VN. Patients in the laser-assisted group had a significantly lower surgical field score and a lower postoperative bleeding rate than those in the cold instrument group. Changes in the VAS were significant in preoperative and postoperative nasal symptoms in each group. The application of diode lasers for vidian nerve transection showed a better surgical field and a lower incidence of postoperative hemorrhage. Recent advancements in laser application and endoscopic technique has made VN safer and more effective. We recommend this surgical approach as a reliable and effective treatment for patients with refractory rhinitis.

Evaluation of the dosimetric properties of a diode detector for small field proton radiosurgery

PubMed Central

Teran, Anthony V.; Slater, Jerry D.; Slater, James M.; Wroe, Andrew J.

2015-01-01

The small fields and sharp gradients typically encountered in proton radiosurgery require high spatial resolution dosimetric measurements, especially below 1–2 cm diameters. Radiochromic film provides high resolution, but requires postprocessing and special handling. Promising alternatives are diode detectors with small sensitive volumes (SV) that are capable of high resolution and real‐time dose acquisition. In this study we evaluated the PTW PR60020 proton dosimetry diode using radiation fields and beam energies relevant to radiosurgery applications. Energies of 127 and 157 MeV (9.7 to 15 cm range) and initial diameters of 8, 10, 12, and 20 mm were delivered using single‐stage scattering and four modulations (0, 15, 30, and 60 mm) to a water tank in our treatment room. Depth dose and beam profile data were compared with PTW Markus N23343 ionization chamber, EBT2 Gafchromic film, and Monte Carlo simulations. Transverse dose profiles were measured using the diode in "edge‐on" orientation or EBT2 film. Diode response was linear with respect to dose, uniform with dose rate, and showed an orientation‐dependent (i.e., beam parallel to, or perpendicular to, detector axis) response of less than 1%. Diode vs. Markus depth‐dose profiles, as well as Markus relative dose ratio vs. simulated dose‐weighted average lineal energy plots, suggest that any LET‐dependent diode response is negligible from particle entrance up to the very distal portion of the SOBP for the energies tested. Finally, while not possible with the ionization chamber due to partial volume effects, accurate diode depth‐dose measurements of 8, 10, and 12 mm diameter beams were obtained compared to Monte Carlo simulations. Because of the small SV that allows measurements without partial volume effects and the capability of submillimeter resolution (in edge‐on orientation) that is crucial for small fields and high‐dose gradients (e.g., penumbra, distal edge), as well as negligible LET dependence over nearly the full the SOBP, the PTW proton diode proved to be a useful high‐resolution, real‐time metrology device for small proton field radiation measurements such as would be encountered in radiosurgery applications. PACS numbers: 87.56.‐v, 87.56.jf, 87.56.Fc PMID:26699554

Overview of optical rectennas for solar energy harvesting

NASA Astrophysics Data System (ADS)

Zhu, Zixu; Joshi, Saumil; Pelz, Bradley; Moddel, Garret

2013-09-01

Although the concept of using optical rectenna for harvesting solar energy was first introduced four decades ago, only recently has it invited a surge of interest, with dozens of laboratories around the world working on various aspects of the technology. An optical rectenna couples an ultra-high-speed diode to a submicron antenna so that the incoming radiation received by the antenna is rectified by the diode to produce a DC power output. The result is a technology that can be efficient and inexpensive, requiring only low-cost materials. Conventional classical rectification theory does not apply at optical frequencies, necessitating the application of quantum photon-assisted tunneling theory to describe the device operation. At first glance it would appear that the ultimate conversion efficiency is limited only by the Landsberg limit of 93%, but a more sober analysis that includes limitation due to the coherence of solar radiation leads to a result that coincides with the Trivich-Flinn limit of 44%. Innovative antenna designs are required to achieve high efficiency at frequencies where resistive losses in metal are substantial. The diode most often considered for rectennas make use of electron tunneling through ultra-thin insulators in metal-insulator-metal (MIM) diodes. The most severe constraint is that the impedances of the antenna and diodes must match for efficient power transfer. The consequence is an RC time constant that cannot be achieved with parallel-plate MIM diodes, leading to the need for real innovations in diode structures. Technologies under consideration include sharp-tip and traveling-wave MIM diodes, and graphene geometric diodes. We survey the technologies under consideration.

Microcontroller interface for diode array spectrometry

NASA Astrophysics Data System (ADS)

Aguo, L.; Williams, R. R.

An alternative to bus-based computer interfacing is presented using diode array spectrometry as a typical application. The new interface consists of an embedded single-chip microcomputer, known as a microcontroller, which provides all necessary digital I/O and analog-to-digital conversion (ADC) along with an unprecedented amount of intelligence. Communication with a host computer system is accomplished by a standard serial interface so this type of interfacing is applicable to a wide range of personal and minicomputers and can be easily networked. Data are acquired asynchronousty and sent to the host on command. New operating modes which have no traditional counterparts are presented.

Diagnosis of high-intensity pulsed heavy ion beam generated by a novel magnetically insulated diode with gas puff plasma gun.

PubMed

Ito, H; Miyake, H; Masugata, K

2008-10-01

Intense pulsed heavy ion beam is expected to be applied to materials processing including surface modification and ion implantation. For those applications, it is very important to generate high-purity ion beams with various ion species. For this purpose, we have developed a new type of a magnetically insulated ion diode with an active ion source of a gas puff plasma gun. When the ion diode was operated at a diode voltage of about 190 kV, a diode current of about 15 kA, and a pulse duration of about 100 ns, the ion beam with an ion current density of 54 A/cm(2) was obtained at 50 mm downstream from the anode. By evaluating the ion species and the energy spectrum of the ion beam via a Thomson parabola spectrometer, it was confirmed that the ion beam consists of nitrogen ions (N(+) and N(2+)) of energy of 100-400 keV and the proton impurities of energy of 90-200 keV. The purity of the beam was evaluated to be 94%. The high-purity pulsed nitrogen ion beam was successfully obtained by the developed ion diode system.

High power diode lasers emitting from 639 nm to 690 nm

NASA Astrophysics Data System (ADS)

Bao, L.; Grimshaw, M.; DeVito, M.; Kanskar, M.; Dong, W.; Guan, X.; Zhang, S.; Patterson, J.; Dickerson, P.; Kennedy, K.; Li, S.; Haden, J.; Martinsen, R.

2014-03-01

There is increasing market demand for high power reliable red lasers for display and cinema applications. Due to the fundamental material system limit at this wavelength range, red diode lasers have lower efficiency and are more temperature sensitive, compared to 790-980 nm diode lasers. In terms of reliability, red lasers are also more sensitive to catastrophic optical mirror damage (COMD) due to the higher photon energy. Thus developing higher power-reliable red lasers is very challenging. This paper will present nLIGHT's released red products from 639 nm to 690nm, with established high performance and long-term reliability. These single emitter diode lasers can work as stand-alone singleemitter units or efficiently integrate into our compact, passively-cooled Pearl™ fiber-coupled module architectures for higher output power and improved reliability. In order to further improve power and reliability, new chip optimizations have been focused on improving epitaxial design/growth, chip configuration/processing and optical facet passivation. Initial optimization has demonstrated promising results for 639 nm diode lasers to be reliably rated at 1.5 W and 690nm diode lasers to be reliably rated at 4.0 W. Accelerated life-test has started and further design optimization are underway.

Diode laser operating on an atomic transition limited by an isotope ⁸⁷Rb Faraday filter at 780 nm.

PubMed

Tao, Zhiming; Hong, Yelong; Luo, Bin; Chen, Jingbiao; Guo, Hong

2015-09-15

We demonstrate an extended cavity Faraday laser system using an antireflection-coated laser diode as the gain medium and the isotope (87)Rb Faraday anomalous dispersion optical filter (FADOF) as the frequency selective device. Using this method, the laser wavelength works stably at the highest transmission peak of the isotope (87)Rb FADOF over the laser diode current from 55 to 140 mA and the temperature from 15°C to 35°C. Neither the current nor the temperature of the laser diode has significant influence on the output frequency. Compared with previous extended cavity laser systems operating at frequencies irrelevant to spectacular atomic transition lines, the laser system realized here provides a stable laser source with the frequency operating on atomic transitions for many practical applications.

The Pierce-diode approximation to the single-emitter plasma diode

NASA Astrophysics Data System (ADS)

Ender, A. Ya.; Kuhn, S.; Kuznetsov, V. I.

2006-11-01

The possibility of modeling fast processes in the collisionless single-emitter plasma diode (Knudsen diode with surface ionization, KDSI) by means of the Pierce-diode is studied. The KDSI is of practical importance in that it is an almost exact model of thermionic energy converters (TICs) in the collisionless regime and can also be used to model low-density Q-machines. At high temperatures, the Knudsen TIC comes close to the efficiency of the Carnot cycle and hence is the most promising converter of thermal to electric energy. TICs can be applied as component parts in high-temperature electronics. It is shown that normalizations must be chosen appropriately in order to compare the plasma characteristics of the two models: the KDSI and the Pierce-diode. A linear eigenmode theory of the KDSI is developed. For both nonlinear time-independent states and linear eigenmodes without electron reflection, excellent agreement is found between the analytical potential distributions for the Pierce-diode and the corresponding numerical ones for the KDSI. For the states with electron reflection, the agreement is satisfactory in a qualitative sense. A full classification of states of both diodes for the regimes with and without electron reflection is presented. The effect of the thermal spread in electron velocities on the potential distributions and the (ɛ,η) diagrams is analyzed. Generally speaking, the methodology developed is usefully applicable to a variety of systems in which the electrons have beam-like distributions.

The Pierce-diode approximation to the single-emitter plasma diode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ender, A. Ya.; Kuhn, S.; Kuznetsov, V. I.

2006-11-15

The possibility of modeling fast processes in the collisionless single-emitter plasma diode (Knudsen diode with surface ionization, KDSI) by means of the Pierce-diode is studied. The KDSI is of practical importance in that it is an almost exact model of thermionic energy converters (TICs) in the collisionless regime and can also be used to model low-density Q-machines. At high temperatures, the Knudsen TIC comes close to the efficiency of the Carnot cycle and hence is the most promising converter of thermal to electric energy. TICs can be applied as component parts in high-temperature electronics. It is shown that normalizations mustmore » be chosen appropriately in order to compare the plasma characteristics of the two models: the KDSI and the Pierce-diode. A linear eigenmode theory of the KDSI is developed. For both nonlinear time-independent states and linear eigenmodes without electron reflection, excellent agreement is found between the analytical potential distributions for the Pierce-diode and the corresponding numerical ones for the KDSI. For the states with electron reflection, the agreement is satisfactory in a qualitative sense. A full classification of states of both diodes for the regimes with and without electron reflection is presented. The effect of the thermal spread in electron velocities on the potential distributions and the ({epsilon},{eta}) diagrams is analyzed. Generally speaking, the methodology developed is usefully applicable to a variety of systems in which the electrons have beam-like distributions.« less

Power blue and green laser diodes and their applications

NASA Astrophysics Data System (ADS)

Hager, Thomas; Strauß, Uwe; Eichler, Christoph; Vierheilig, Clemens; Tautz, Sönke; Brüderl, Georg; Stojetz, Bernhard; Wurm, Teresa; Avramescu, Adrian; Somers, André; Ristic, Jelena; Gerhard, Sven; Lell, Alfred; Morgott, Stefan; Mehl, Oliver

2013-03-01

InGaN based green laser diodes with output powers up to 50mW are now well established for variety of applications ranging from leveling to special lighting effects and mobile projection of 12lm brightness. In future the highest market potential for visible single mode profile lasers might be laser projection of 20lm. Therefore direct green single-mode laser diodes with higher power are required. We found that self heating was the limiting factor for higher current operation. We present power-current characteristics of improved R and D samples with up to 200mW in cw-operation. An optical output power of 100mW is reached at 215mA, a current level which is suitable for long term operation. Blue InGaN laser diodes are also the ideal source for phosphor based generation of green light sources of high luminance. We present a light engine based on LARP (Laser Activated Remote Phosphor) which can be used in business projectors of several thousand lumens on screen. We discuss the advantages of a laser based systems in comparison with LED light engines. LARP requires highly efficient blue power laser diodes with output power above 1W. Future market penetration of LARP will require lower costs. Therefore we studied new designs for higher powers levels. R and D chips with power-current characteristics up to 4W in continuous wave operation on C-mount at 25°C are presented.

Capturing thermal, mechanical, and acoustic effects of the diode (980 nm) laser in stapedotomy.

PubMed

Kamalski, Digna M A; de Boorder, Tjeerd; Bittermann, Arnold J N; Wegner, Inge; Vincent, Robert; Grolman, Wilko

2014-07-01

The diode laser, with a wavelength of 980 nm, has promising characteristics for being used for the fenestration during stapedotomy. It is known that at this wavelength absorption in pigmented tissues is high, and absorption in water is relatively low compared with medical lasers in the infrared, making it theoretically an applicable laser for stapes surgery in patients with otosclerosis. Another important advantage is that, with respect to other lasers, this device is relatively inexpensive. Despite the potential advantages, the available literature only shows limited reports of this laser being used in stapes surgery. The present article evaluates the thermal, mechanical, and acoustic properties of the diode laser during stapes surgery. For the mechanical effects, high-speed imaging with a frame rate up to 4000 f/s (=250 μs resolution) was performed in an inner ear model. For thermal effects, the high-speed Schlieren technique was used. Acoustics were recorded by a hydrophone, incorporated in the model. Pulse settings were 100 ms, 3 W, which are the same settings used during stapes surgery. The application of the diode laser resulted in limited mechanical and thermal effects. Impulse noise was low with an average of 52 (SD, 7.8) dB (A). Before carbonization of the tip of the delivery laser, fiber enhances ablation of the footplate. The 980-nm diode laser is a useful tool for laser-assisted stapedotomy in patients with otosclerosis. Mechanical, thermal, and acoustic effects are limited and well within the safety limits.

LASER BIOLOGY AND MEDICINE: Medical instruments based on high-power diode and fibre lasers

NASA Astrophysics Data System (ADS)

Gapontsev, V. P.; Minaev, V. P.; Savin, V. I.; Samartsev, I. E.

2002-11-01

The characteristics and possible applications of scalpels based on diode and fibre lasers emitting at 0.97, 1.06, 1.56, and 1.9 μm, which are produced and developed by the IRE-Polyus Co., are presented. The advantages of such devices and the possibilities for increasing their output power and extending their spectral range are shown.

NicoLase—An open-source diode laser combiner, fiber launch, and sequencing controller for fluorescence microscopy

PubMed Central

Walsh, James; Böcking, Till; Gaus, Katharina

2017-01-01

Modern fluorescence microscopy requires software-controlled illumination sources with high power across a wide range of wavelengths. Diode lasers meet the power requirements and combining multiple units into a single fiber launch expands their capability across the required spectral range. We present the NicoLase, an open-source diode laser combiner, fiber launch, and software sequence controller for fluorescence microscopy and super-resolution microscopy applications. Two configurations are described, giving four or six output wavelengths and one or two single-mode fiber outputs, with all CAD files, machinist drawings, and controller source code openly available. PMID:28301563

Efficient thermal diode with ballistic spacer

NASA Astrophysics Data System (ADS)

Chen, Shunda; Donadio, Davide; Benenti, Giuliano; Casati, Giulio

2018-03-01

Thermal rectification is of importance not only for fundamental physics, but also for potential applications in thermal manipulations and thermal management. However, thermal rectification effect usually decays rapidly with system size. Here, we show that a mass-graded system, with two diffusive leads separated by a ballistic spacer, can exhibit large thermal rectification effect, with the rectification factor independent of system size. The underlying mechanism is explained in terms of the effective size-independent thermal gradient and the match or mismatch of the phonon bands. We also show the robustness of the thermal diode upon variation of the model's parameters. Our finding suggests a promising way for designing realistic efficient thermal diodes.

In-vivo rectal dose measurements with diodes to avoid misadministrations during intracavitary high dose rate brachytherapy for carcinoma of the cervix.

PubMed

Alecu, R; Alecu, M

1999-05-01

Our purpose in this paper is to present an in vivo dosimetry program designed both for measuring the rectal dose and for avoiding misadministrations in gynecological intracavitary implants. A device containing an energy compensated diode was specially designed for these measurements. Our calibration procedure as well as the clinical protocol is described. Measurements have been performed for 50 treatments delivered with a Fletcher Suit Delclos applicator. The calculated and in vivo measured values for the "20% reading," i.e., the dose delivered to the diode by the initial 20% of the total dwell time, agreed to within 15%.

Clinical application of a new 0.63- to 0.65-μm pulse diode laser in treating ear, throat, and nose diseases in adults and children

NASA Astrophysics Data System (ADS)

Nasedkin, Alexy N.; Pletnev, A. S.

2001-04-01

An investigation was made of applying a pulsed diode laser emitting at the wavelengths of 0.63 to 0.65 micrometers to treat various otolaryngological diseases, such as rhinosinusitis, acute rhinitis, vasomotor rhinitis, allergic rhinitis, the illness of the lymphoid ring, adenoiditis, chronic tonsillitis, pharyngitis, and catarrhal and suppurative otitis. The therapeutic effect produced by the pulsed diode laser was compared with that of conventional therapeutic lasers. It was found that the pulsed low-intensity laser radiation in the red spectrum region offered a number of advantages over conventional laser therapeutic techniques.

Theoretical model for frequency locking a diode laser with a Faraday cell

NASA Technical Reports Server (NTRS)

Wanninger, P.; Shay, T. M.

1992-01-01

A new method was developed for frequency locking a diode lasers, called 'the Faraday anomalous dispersion optical transmitter (FADOT) laser locking', which is much simpler than other known locking schemes. The FADOT laser locking method uses commercial laser diodes with no antireflection coatings, an atomic Faraday cell with a single polarizer, and an output coupler to form a compound cavity. The FADOT method is vibration insensitive and exhibits minimal thermal expansion effects. The system has a frequency pull in the range of 443.2 GHz (9 A). The method has potential applications in optical communication, remote sensing, and pumping laser excited optical filters.

Integrated packaging of 2D MOEMS mirrors with optical position feedback

NASA Astrophysics Data System (ADS)

Baumgart, M.; Lenzhofer, M.; Kremer, M. P.; Tortschanoff, A.

2015-02-01

Many applications of MOEMS microscanners rely on accurate position feedback. For MOEMS devices which do not have intrinsic on-chip feedback, position information can be provided with optical methods, most simply by using a reflection from the backside of a MOEMS scanner. By measuring the intensity distribution of the reflected beam across a quadrant diode, one can precisely detect the mirror's deflection angles. Previously, we have presented a position sensing device, applicable to arbitrary trajectories, which is based on the measurement of the position of the reflected laser beam with a quadrant diode. In this work, we present a novel setup, which comprises the optical position feedback functionality integrated into the device package itself. The new device's System-in-Package (SiP) design is based on a flip-folded 2.5D PCB layout and fully assembled as small as 9.2×7×4 mm³ in total. The device consists of four layers, which supply the MOEMS mirror, a spacer to provide the required optical path length, the quadrant photo-diode and a laser diode to serve as the light source. In addition to describing the mechanical setup of the novel device, we will present first experimental results and optical simulation studies. Accurate position feedback is the basis for closed-loop control of the MOEMS devices, which is crucial for some applications as image projection for example. Position feedback and the possibility of closed-loop control will significantly improve the performance of these devices.

Study of pseudo noise CW diode laser for ranging applications

NASA Technical Reports Server (NTRS)

Lee, Hyo S.; Ramaswami, Ravi

1992-01-01

A new Pseudo Random Noise (PN) modulated CW diode laser radar system is being developed for real time ranging of targets at both close and large distances (greater than 10 KM) to satisy a wide range of applications: from robotics to future space applications. Results from computer modeling and statistical analysis, along with some preliminary data obtained from a prototype system, are presented. The received signal is averaged for a short time to recover the target response function. It is found that even with uncooperative targets, based on the design parameters used (200-mW laser and 20-cm receiver), accurate ranging is possible up to about 15 KM, beyond which signal to noise ratio (SNR) becomes too small for real time analog detection.

Thermal characterization of three-dimensional printed components for light-emitting diode lighting system applications

NASA Astrophysics Data System (ADS)

Perera, Indika U.; Narendran, Nadarajah; Terentyeva, Valeria

2018-04-01

This study investigated the thermal properties of three-dimensional (3-D) printed components with the potential to be used for thermal management in light-emitting diode (LED) applications. Commercially available filament materials with and without a metal filler were characterized with changes to the print orientation. 3-D printed components with an in-plane orientation had >30 % better effective thermal conductivity compared with components printed with a cross-plane orientation. A finite-element analysis was modeled to understand the effective thermal conductivity changes in the 3-D printed components. A simple thermal resistance model was used to estimate the required effective thermal conductivity of the 3-D printed components to be a viable alternative in LED thermal management applications.

Compact CPW-fed spiral-patch monopole antenna with tuneable frequency for multiband applications

NASA Astrophysics Data System (ADS)

Beigi, P.; Nourinia, J.; Zehforoosh, Y.

2018-04-01

A frequency reconfigurable monopole antenna with coplanar waveguide-fed with four switchable for multiband application is reported. The monopole antenna includes square-spiral patch and two L-shaped elements. The number of frequency resonances are increased by adding square spiral. In the reported antenna, two PIN diodes are used to achieve the multiband operation. PIN diodes embedded on the spiral patch can control the frequency resonance when they are forward-biased or in those off-state. The final designed antenna, with compact size of 20 × 20 ×1 mm3, has been fabricated on an inexpensive FR4 substrate. All experimental and simulation results are acceptable suggesting that the reported antenna is a good candidate for multiband applications.

Tooth Whitening And Temperature Rise With Two Bleaching Activation Methods

DOE Office of Scientific and Technical Information (OSTI.GOV)

Abu-ElMagd, D. M.; El-Sayad, I. I.; Abd El-Gawad, L. M.

2009-09-27

To measure the tooth whitening and the surface and Intrapulpal temperature increase in vitro on freshly extracted upper human central incisors after chemical, Zoom AP light and diode laser activated bleaching. Thirty caries-free upper human incisors were selected. Teeth were divided into three equal groups according to the methods of activation of the bleaching agent (n = 10). A whitening gel containing hydrogen peroxide was applied to the buccal surface of all teeth. Group I was bleached using chemically activated hydrogen peroxide gel, for three applications of 15 min each. Group II was bleached with high intensity advanced power Zoommore » activation light (Zoom AP), for three applications of 15 min each. Group III was bleached with diode laser activation technique, where the teeth were irradiated with 2 Watt diode laser for three applications of 30 sec each. The whitening degree was assessed using an image analysis system, while temperature rise was recorded using a thermocouple on the external tooth surface and Intrapulpal. The degree of whitening increased significantly in all groups. However, the percentage of whitening was not statistically significantly different between the three groups. In addition, group II showed statistically significant higher mean rise in both surface and pulp temperatures than group I and group III. Chemical bleaching produces the same whitening effect as Zoom AP light and laser, with no surface or pulpal temperature rise. Laser application is faster and produces less surface and pulp temperature increase than Zoom AP light. Diode laser used to activate bleaching gels is not considered dangerous to the vitality of dental pulp using power settings of 2 W.« less

Silicon Carbide Gas Sensors for Propulsion Emissions and Safety Applications

NASA Technical Reports Server (NTRS)

Hunter, G. W.; Xu, J.; Neudeck, P. G.; Lukco, D.; Trunek, A.; Spry, D.; Lampard, P.; Androjna, D.; Makel, D.; Ward, B.

2007-01-01

Silicon carbide (SiC) based gas sensors have the ability to meet the needs of a range of aerospace propulsion applications including emissions monitoring, leak detection, and hydrazine monitoring. These applications often require sensitive gas detection in a range of environments. An effective sensing approach to meet the needs of these applications is a Schottky diode based on a SiC semiconductor. The primary advantage of using SiC as a semiconductor is its inherent stability and capability to operate at a wide range of temperatures. The complete SiC Schottky diode gas sensing structure includes both the SiC semiconductor and gas sensitive thin film metal layers; reliable operation of the SiC-based gas sensing structure requires good control of the interface between these gas sensitive layers and the SiC. This paper reports on the development of SiC gas sensors. The focus is on two efforts to better control the SiC gas sensitive Schottky diode interface. First, the use of palladium oxide (PdOx) as a barrier layer between the metal and SiC is discussed. Second, the use of atomically flat SiC to provide an improved SiC semiconductor surface for gas sensor element deposition is explored. The use of SiC gas sensors in a multi-parameter detection system is briefly discussed. It is concluded that SiC gas sensors have potential in a range of propulsion system applications, but tailoring of the sensor for each application is necessary.

Four channel Laser Firing Unit using laser diodes

NASA Technical Reports Server (NTRS)

Rosner, David, Sr.; Spomer, Edwin, Sr.

1994-01-01

This paper describes the accomplishments and status of PS/EDD's (Pacific Scientific/Energy Dynamics Division) internal research and development effort to prototype and demonstrate a practical four channel laser firing unit (LFU) that uses laser diodes to initiate pyrotechnic events. The LFU individually initiates four ordnance devices using the energy from four diode lasers carried over the fiber optics. The LFU demonstrates end-to-end optical built in test (BIT) capabilities. Both Single Fiber Reflective BIT and Dual Fiber Reflective BIT approaches are discussed and reflection loss data is presented. This paper includes detailed discussions of the advantages and disadvantages of both BIT approaches, all-fire and no-fire levels, and BIT detection levels. The following topics are also addressed: electronic control and BIT circuits, fiber optic sizing and distribution, and an electromechanical shutter type safe/arm device. This paper shows the viability of laser diode initiation systems and single fiber BIT for typing military applications.

Blue laser diode (450 nm) systems for welding copper

NASA Astrophysics Data System (ADS)

Silva Sa, M.; Finuf, M.; Fritz, R.; Tucker, J.; Pelaprat, J.-M.; Zediker, M. S.

2018-02-01

This paper will discuss the development of high power blue laser systems for industrial applications. The key development enabling high power blue laser systems is the emergence of high power, high brightness laser diodes at 450 nm. These devices have a high individual brightness rivaling their IR counterparts and they have the potential to exceed their performance and price barriers. They also have a very high To resulting in a 0.04 nm/°C wavelength shift. They have a very stable lateral far-field profile which can be combined with other diodes to achieve a superior brightness. This paper will report on the characteristics of the blue laser diodes, their integration into a modular laser system suitable for scaling the output power to the 1 kW level and beyond. Test results will be presented for welding of copper with power levels ranging from 150 Watts to 600 Watts

Efficient generation of 1.9  W yellow light by cascaded frequency doubling of a distributed Bragg reflector tapered diode.

PubMed

Hansen, A K; Christensen, M; Noordegraaf, D; Heist, P; Papastathopoulos, E; Loyo-Maldonado, V; Jensen, O B; Skovgaard, P M W

2016-11-10

Watt-level yellow emitting lasers are interesting for medical applications, due to their high hemoglobin absorption, and for efficient detection of certain fluorophores. In this paper, we demonstrate a compact and robust diode-based laser system in the yellow spectral range. The system generates 1.9 W of single-frequency light at 562.4 nm by cascaded single-pass frequency doubling of the 1124.8 nm emission from a distributed Bragg reflector (DBR) tapered laser diode. The absence of a free-space cavity makes the system stable over a base-plate temperature range of 30 K. At the same time, the use of a laser diode enables the modulation of the pump wavelength by controlling the drive current. This is utilized to achieve a power modulation depth above 90% for the second harmonic light, with a rise time below 40  μs.

[Laservaporization of the prostate: current status of the greenlight and diode laser].

PubMed

Rieken, M; Bachmann, A; Gratzke, C

2013-03-01

In the last decade laser vaporization of the prostate has emerged as a safe and effective alternative to transurethral resection of the prostate (TURP). This was facilitated in particular by the introduction of photoselective vaporization of the prostate (PVP) with a 532 nm 80 W KTP laser in 2002. Prospective randomized trials comparing PVP and TURP with a maximum follow-up of 3 years mostly demonstrated comparable functional results. Cohort studies showed a safe application of PVP in patients under oral anticoagulation and with large prostates. Systems from various manufacturers with different maximum power output and wavelengths are now available for diode laser vaporization of the prostate. Prospective randomized trials comparing diode lasers and TURP are not yet available. In cohort studies and comparative studies PVP diode lasers are characterized by excellent hemostatic properties but functional results vary greatly with some studies reporting high reoperation rates.

High efficiency and broadband acoustic diodes

NASA Astrophysics Data System (ADS)

Fu, Congyi; Wang, Bohan; Zhao, Tianfei; Chen, C. Q.

2018-01-01

Energy transmission efficiency and working bandwidth are the two major factors limiting the application of current acoustic diodes (ADs). This letter presents a design of high efficiency and broadband acoustic diodes composed of a nonlinear frequency converter and a linear wave filter. The converter consists of two masses connected by a bilinear spring with asymmetric tension and compression stiffness. The wave filter is a linear mass-spring lattice (sonic crystal). Both numerical simulation and experiment show that the energy transmission efficiency of the acoustic diode can be improved by as much as two orders of magnitude, reaching about 61%. Moreover, the primary working band width of the AD is about two times of the cut-off frequency of the sonic crystal filter. The cut-off frequency dependent working band of the AD implies that the developed AD can be scaled up or down from macro-scale to micro- and nano-scale.

Analysis of High-Power Diode Laser Heating Effects on HY-80 Steel for Laser Assisted Friction Stir Welding Applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wiechec, Maxwell; Baker, Brad; McNelley, Terry

In this research, several conditions of high power diode laser heated HY-80 steel were characterized to determine the viability of using such lasers as a preheating source before friction stir welding in order to reduce frictional forces thereby reducing tool wear and increasing welding speeds. Differences in microstructures within heat affected zones were identified at specific laser powers and traverse speeds. Vickers hardness values were recorded and analyzed to validate the formation of additional martensite in diode laser heated regions of HY-80 steel. Conditions that produced little to no additional martensite were identified and relationships among high power diode lasermore » power, traverse speed, and martensite formation were determined. The development of heat affected zones, change in grain structure, and creation of additional martensite in HY-80 can be prevented through the optimization of laser amperage and transverse speed.« less

Novel packaging for CW and QCW diode laser modules for operation with high power and duty cycles

NASA Astrophysics Data System (ADS)

Fassbender, Wilhelm; Lotz, Jens; Kissel, Heiko; Biesenbach, Jens

2018-02-01

Continuous wave (CW) and quasi-continuous wave (QCW) operated diode laser bars and arrays have found a wide range of industrial, medical, scientific, military and space applications with a broad variety in wavelength, pulse energy, pulse duration and beam quality. Recent applications require even higher power, duty cycles and power density. The heat loss will be dissipated by conductive cooling or liquid cooling close to the bars. We present the latest performance and reliability data of two novel high-brightness CW and QCW arrays of customized and mass-production modules, in compact and robust industry design for operation with high power and high duty cycles. All designs are based on single diode packages consisting of 10mm laser bars, soft or hard soldered between expansion matched submounts. The modular components cover a wide span of designs which differ basically in water/conduction (active/passive) cooled, single, linear (horizontal and vertical) arranged designs, as well as housed and unhoused modules. The different assembling technologies of active and passive cooled base plates affect the heat dissipation and therefore the reachable power at different QCW operating conditions, as well as the lifetime. As an example, a package consisting of 8 laser diodes, connected to a 28.8*13.5*7.0mm3 DCB (direct copper bonded) submount, passively or actively cooled is considered. This design is of particular interest for mobile applications seamless module to module building system, with an infinite number of laser bars at 1.7mm pitch. Using 940nm bars we can reach an optical output power per bar of 450W at 25°C base plate temperature with 10Hz, 1.2% duty cycle and 1.2ms pulse duration. As an additional example, micro channel coolers can be vertically stacked up to 50 diodes with a 1,15mm pitch. This design is suitable for all applications, demanding also compactness and light weight and high power density. Using near infrared bars and others, we can reach an optical output power of 250W per bar at 25°C coolant temperature at CW operation.

A High Frequency (HF) Inductive Power Transfer Circuit for High Temperature Applications Using SiC Schottky Diodes

NASA Technical Reports Server (NTRS)

Jordan, Jennifer L.; Ponchak, George E.; Spry, David J.; Neudeck, Philip G.

2018-01-01

Wireless sensors placed in high temperature environments, such as aircraft engines, are desirable to reduce the mass and complexity of routing wires. While communication with the sensors is straight forward, providing power wirelessly is still a challenge. This paper introduces an inductive wireless power transfer circuit incorporating SiC Schottky diodes and its operation from room temperature (25 C) to 500 C.

Rapid Prototyping: State of the Art

DTIC Science & Technology

2003-10-23

Rapid Prototyping SCS Solid Creation System SLM Selective Laser Melting SLP Solid Laser diode Plotter SLS Selective Laser Sintering SOAR State of the...121,000, respectively. SLP stands for Sold Laser Diode Plotter. The machines are relatively slow and parts are small, so, to date, the products have been...Gigerenzer, H., “Directed Laser Welding of Metal Matrix Composite Structures for Space Based Applications,“ Triton Systems Inc., Chelmsford, MA., 1

Light emitting diodes (LED): applications in forest and native plant nurseries

Treesearch

Thomas D. Landis; Jeremiah R. Pinto; R. Kasten Dumroese

2013-01-01

It was quotes like this that made us want to learn more about light emitting diodes (LED). Other than knowing that LEDs were the latest innovation in artificial lighting, we knew that we had a lot to learn. So we started by reviewing some of the basics. The following review is a brief synopsis of how light affects plants and some discussion about LED lighting. If you...

High power diode lasers for solid-state laser pumps

NASA Technical Reports Server (NTRS)

Linden, Kurt J.; Mcdonnell, Patrick N.

1994-01-01

The development and commercial application of high power diode laser arrays for use as solid-state laser pumps is described. Such solid-state laser pumps are significantly more efficient and reliable than conventional flash-lamps. This paper describes the design and fabrication of diode lasers emitting in the 780 - 900 nm spectral region, and discusses their performance and reliability. Typical measured performance parameters include electrical-to-optical power conversion efficiencies of 50 percent, narrow-band spectral emission of 2 to 3 nm FWHM, pulsed output power levels of 50 watts/bar with reliability values of over 2 billion shots to date (tests to be terminated after 10 billion shots), and reliable operation to pulse lengths of 1 ms. Pulse lengths up to 5 ms have been demonstrated at derated power levels, and CW performance at various power levels has been evaluated in a 'bar-in-groove' laser package. These high-power 1-cm stacked-bar arrays are now being manufactured for OEM use. Individual diode laser bars, ready for package-mounting by OEM customers, are being sold as commodity items. Commercial and medical applications of these laser arrays include solid-state laser pumping for metal-working, cutting, industrial measurement and control, ranging, wind-shear/atmospheric turbulence detection, X-ray generation, materials surface cleaning, microsurgery, ophthalmology, dermatology, and dental procedures.

Effective of diode laser on teeth enamel in the teeth whitening treatment

NASA Astrophysics Data System (ADS)

Klunboot, U.; Arayathanitkul, K.; Chitaree, R.; Emarat, N.

2011-12-01

This research purpose is to investigate the changing of teeth color and to study the surface of teeth after treatment by laser diode at different power densities for tooth whitening treatment. In the experiment, human-extracted teeth samples were divided into 7 groups of 6 teeth each. After that laser diode was irradiated to teeth, which were coated by 38% concentration of hydrogen peroxide, during for 20, 30 and 60 seconds at power densities of 10.9 and 52.1 W/cm2. The results of teeth color change were described by the CIEL*a*b* systems and the damage of teeth surface were investigated by scanning electron microscopy (SEM). The results showed that the power density of the laser diode could affect the whiteness of teeth. The high power density caused more luminous teeth than the low power density did, but on the other hand the high power density also caused damage to the teeth surface. Therefore, the laser diode at the low power densities has high efficiency for tooth whitening treatment and it has a potential for other clinical applications.

Wavelength-agile diode-laser sensing strategies for monitoring gas properties in optically harsh flows: application in cesium-seeded pulse detonation

NASA Astrophysics Data System (ADS)

Sanders, Scott Thomas; Mattison, Daniel W.; Ma, Lin; Jeffries, Jay B.; Hanson, Ronald K.

2002-06-01

The rapid, broad wavelength scanning capabilities of advanced diode lasers allow extension of traditional diode-laser absorption techniques to high pressure, transient, and generally hostile environments. Here, we demonstrate this extension by applying a vertical cavity surface-emitting laser (VCSEL) to monitor gas temperature and pressure in a pulse detonation engine (PDE). Using aggressive injection current modulation, the VCSEL is scanned through a 10 cm-1 spectral window at megahertz rates roughly 10 times the scanning range and 1000 times the scanning rate of a conventional diode laser. The VCSEL probes absorption lineshapes of the ~ 852 nm D2 transition of atomic Cs, seeded at ~ 5 ppm into the feedstock gases of a PDE. Using these lineshapes, detonated-gas temperature and pressure histories, spanning 2000 4000 K and 0.5 30 atm, respectively, are recorded with microsecond time response. The increasing availability of wavelength-agile diode lasers should support the development of similar sensors for other harsh flows, using other absorbers such as native H2O.

Microwave-signal generation in a planar Gunn diode with radiation exposure taken into account

DOE Office of Scientific and Technical Information (OSTI.GOV)

Obolenskaya, E. S., E-mail: bess009@mail.ru, E-mail: obolensk@rf.unn.ru; Tarasova, E. A.; Churin, A. Yu.

2016-12-15

Microwave-signal generation in planar Gunn diodes with a two-dimensional electron gas, in which we previously studied steady-state electron transport, is theoretically studied. The applicability of a control electrode similar to a field-effect transistor gate to control the parameters of the output diode microwave signal is considered. The results of physical-topological modeling of semiconductor structures with different diode active-region structures, i.e., without a quantum well, with one and two quantum wells separated by a potential barrier, are compared. The calculated results are compared with our previous experimental data on recording Gunn generation in a Schottky-gate field-effect transistor. It is theoretically andmore » experimentally shown that the power of the signal generated by the planar Gunn diode with a quantum well and a control electrode is sufficient to implement monolithic integrated circuits of different functionalities. It is theoretically and experimentally shown that the use of a control electrode on account of the introduction of corrective feedback allows a significant increase in the radiation resistance of a microwave generator with Schottky-gate field-effect transistors.« less

Hermetic diode laser transmitter module

NASA Astrophysics Data System (ADS)

Ollila, Jyrki; Kautio, Kari; Vahakangas, Jouko; Hannula, Tapio; Kopola, Harri K.; Oikarinen, Jorma; Sivonen, Matti

1999-04-01

In very demanding optoelectronic sensor applications it is necessary to encapsulate semiconductor components hermetically in metal housings to ensure reliable operation of the sensor. In this paper we report on the development work to package a laser diode transmitter module for a time- off-light distance sensor application. The module consists of a lens, laser diode, electronic circuit and optomechanics. Specifications include high acceleration, -40....+75 degree(s)C temperature range, very low gas leakage and mass-production capability. We have applied solder glasses for sealing optical lenses and electrical leads hermetically into a metal case. The lens-metal case sealing has been made by using a special soldering glass preform preserving the optical quality of the lens. The metal housings are finally sealed in an inert atmosphere by welding. The assembly concept to retain excellent optical power and tight optical axis alignment specifications is described. The reliability of the laser modules manufactured has been extensively tested using different aging and environmental test procedures. Sealed packages achieve MIL- 883 standard requirements for gas leakage.

Electrical transport characterization of PEDOT:PSS/n-Si Schottky diodes and their applications in solar cells.

PubMed

Khurelbaatar, Zagarzusem; Hyung, Jung-Hwan; Kim, Gil-Sung; Park, No-Won; Shim, Kyu-Hwan; Lee, Sang-Kwon

2014-06-01

We demonstrate locally contacted PEDOT:PSS Schottky diodes with excellent rectifying behavior, fabricated on n-type Si substrates using a spin-coating process and a reactive-ion etching process. Electrical transport characterizations of these Schottky diodes were investigated by both current-voltage (I-V) and capacitance-voltage (C-V) measurements. We found that these devices exhibit excellent modulation in the current with an on/off ratio of - 10(6). Schottky junction solar cells composed of PEDOT:PSS and n-Si structures were also examined. From the current density-voltage (J-V) measurement of a solar cell under illumination, the short circuit current (I(sc)), open circuit voltage (V(oc)), and conversion efficiency (eta) were - 19.7 mA/cm2, - 578.5 mV, and - 6.5%, respectively. The simple and low-cost fabrication process of the PEDOT:PSS/n-Si Schottky junctions makes them a promising candidate for further high performance solar cell applications.

The silicon vidicon: Integration, storage and slow scan capability - Experimental observation of a secondary mode of operation.

NASA Technical Reports Server (NTRS)

Ando, K. J.

1971-01-01

Description of the performance of the silicon diode array vidicon - an imaging sensor which possesses wide spectral response, high quantum efficiency, and linear response. These characteristics, in addition to its inherent ruggedness, simplicity, and long-term stability and operating life make this device potentially of great usefulness for ground-base and spaceborne planetary and stellar imaging applications. However, integration and charged storage for periods greater than approximately five seconds are not possible at room temperature because of diode saturation from dark current buildup. Since dark current can be reduced by cooling, measurements were made in the range from -65 to 25 C. Results are presented on the extension of integration, storage, and slow scan capabilities achievable by cooling. Integration times in excess of 20 minutes were achieved at the lowest temperatures. The measured results are compared with results obtained with other types of sensors and the advantages of the silicon diode array vidicon for imaging applications are discussed.

Reduced Graphene Oxide/Single-Walled Carbon Nanotube Hybrid Films Using Various p-Type Dopants and Their Application to GaN-Based Light-Emitting Diodes.

PubMed

Lee, Byeong Ryong; Kim, Tae Geun

2017-01-01

This article reports the electrical and optical properties of the reduced graphene oxide (RGO)/single-walled carbon nanotube (SWCNT) films using various p-type dopants and their application to GaN-based light-emitting diodes. To enhance the current injection and spreading of the RGO/SWCNT films on the light-emitting diodes (LEDs), we increased the work function (Φ) of the films using chemical doping with AuCl₃, poly(3,4-ethylenedioxythiophene) oxidized with poly(4-styrenesulfonate) (PEDOT:PSS) and MoO₃; thereby reduced the Schottky barrier height between the RGO/SWCNT films and p-GaN. By comparison, LEDs fabricated with work-function-tuned RGO/SWCNT film doped with MoO₃ exhibited the decrease of the forward voltage from 5.3 V to 5.02 V at 20 mA and the increase of the output power up to 1.26 times. We also analyzed the current injection mechanism using ultraviolet photoelectron spectroscopy and X-ray photoelectron spectroscopy.

GreenLight laser vs diode laser vaporization of the prostate: 3-year results of a prospective nonrandomized study.

PubMed

Guo, Sanwei; Müller, Georg; Bonkat, Gernot; Püschel, Heike; Gasser, Thomas; Bachmann, Alexander; Rieken, Malte

2015-04-01

Laser vaporization of the prostate is one of the alternatives to transurethral resection of the prostate. Short-term studies report a comparable outcome after laser vaporization with the 532 nm 120-W GreenLight high-performance system (HPS) laser and the 980 nm 200 W high-intensity diode (diode) laser. In this study, we analyzed the intermediate-term results of both techniques. From January 2007 to January 2008, 112 consecutive patients with symptomatic benign prostate enlargement were nonrandomly assigned to treatment with the GreenLight laser or the diode laser. Perioperative parameters, postoperative functional outcome, complications, and the reoperation rate at 3 years were analyzed. Improvement of voiding symptoms (International Prostate Symptom Score, quality-of-life) and micturition parameters (maximum flow rate, postvoid residual volume) showed no significant difference between the HPS group and the diode group. A significantly higher reoperation rate was observed in the diode group in comparison to the HPS group (37.5% vs 8.9%, p=0.0003) due to obstructive necrotic tissue (16.1% vs 0%, p=0.0018), bladder neck stricture (16.1% vs 1.8%, p=0.008), and persisting or recurrent adenoma (5.4% vs 7.1%, p=0.70), respectively. Both lasers lead to comparable improvement of voiding parameters and micturition symptoms. Treatment with the 200 W diode laser led to a significantly higher reoperation rate, which might be attributed to a higher degree of coagulation necrosis. Thus, a careful clinical application of this diode laser type is warranted.

Improvement in reduced-mode (REM) diodes enable 315 W from 105-μm 0.15-NA fiber-coupled modules

NASA Astrophysics Data System (ADS)

Kanskar, M.; Bao, L.; Chen, Z.; Dawson, D.; DeVito, M.; Dong, W.; Grimshaw, M.; Guan, X.; Hemenway, M.; Martinsen, R.; Urbanek, W.; Zhang, S.

2018-02-01

High-power, high-brightness diode lasers have been pursued for many applications including fiber laser pumping, materials processing, solid-state laser pumping, and consumer electronics manufacturing. In particular, 915 nm - and 976 nm diodes are of interest as diode pumps for the kilowatt CW fiber lasers. As a result, there have been many technical thrusts for driving the diode lasers to have both high power and high brightness to achieve high-performance and reduced manufacturing costs. This paper presents our continued progress in the development of high brightness fiber-coupled product platform, nLIGHT element®. In the past decade, the power coupled into a single 105 μm and 0.15 NA fiber has increased by over a factor of ten through improved diode laser brightness and the development of techniques for efficiently coupling multiple emitters. In this paper, we demonstrate further brightness improvement and power-scaling enabled by both the rise in chip brightness/power and the increase in number of chips coupled into a given numerical aperture. We report a new chip technology using x-REM design with brightness as high as 4.3 W/mm-mrad at a BPP of 3 mm-mrad. We also report record 315 W output from a 2×12 nLIGHT element with 105 μm diameter fiber using x-REM diodes and these diodes will allow next generation of fiber-coupled product capable of 250W output power from 105 μm/0.15 NA beam at 915 nm.

A low-cost photoacoustic microscopy system with a laser diode excitation

PubMed Central

Wang, Tianheng; Nandy, Sreyankar; Salehi, Hassan S.; Kumavor, Patrick D.; Zhu, Quing

2014-01-01

Photoacoustic microscopy (PAM) is capable of mapping microvasculature networks in biological tissue and has demonstrated great potential for biomedical applications. However, the clinical application of the PAM system is limited due to the use of bulky and expensive pulsed laser sources. In this paper, a low-cost optical-resolution PAM system with a pulsed laser diode excitation has been introduced. The lateral resolution of this PAM system was estimated to be 7 µm by imaging a carbon fiber. The phantoms made of polyethylene tubes filled with blood and a mouse ear were imaged to demonstrate the feasibility of this PAM system for imaging biological tissues. PMID:25401019

GaAs-based resonant tunneling diode (RTD) epitaxy on Si for highly sensitive strain gauge applications.

PubMed

Li, Jie; Guo, Hao; Liu, Jun; Tang, Jun; Ni, Haiqiao; Shi, Yunbo; Xue, Chenyang; Niu, Zhichuan; Zhang, Wendong; Li, Mifeng; Yu, Ying

2013-05-08

As a highly sensitive strain gauge element, GaAs-based resonant tunneling diode (RTD) has already been applied in microelectromechanical system (MEMS) sensors. Due to poor mechanical properties and high cost, GaAs-based material has been limited in applications as the substrate for MEMS. In this work, we present a method to fabricate the GaAs-based RTD on Si substrate. From the experimental results, it can be concluded that the piezoresistive coefficient achieved with this method reached 3.42 × 10-9 m2/N, which is about an order of magnitude higher than the Si-based semiconductor piezoresistors.

SrMoO4:Er3+-Yb3+ upconverting phosphor for photonic and forensic applications

NASA Astrophysics Data System (ADS)

Soni, Abhishek Kumar; Rai, Vineet Kumar

2016-08-01

The Er3+-Yb3+ codoped strontium molybdate (SrMoO4) phosphors have been synthesized via chemical co-precipitation method by adding ammonium hydroxide as a base reagent. The phase, crystal structure and formation of spindle-like particles present in the prepared phosphors have been recognized by using the X-ray powder diffraction (XRPD) and Field emission scanning electron microscopy (FE-SEM) techniques. The Fourier transform infrared (FTIR) spectroscopy of the developed phosphors has been analyzed to mark the different functional groups present in synthesized phosphors. The multicolour upconversion emissions observed upon excitation with 980 nm and 808 nm laser diode have been explained on the basis of dopants ions concentration, pump power dependence, energy level structure and decay curve analysis. The colour co-ordinate study confirmed that the codoped phosphor emits non-tunable green colour when excited with the 980 nm laser diode, whereas it shows the colour tunability from yellow to green region upon excitation with the 808 nm laser diode. The applicability of non-tunable green colour emission has been demonstrated in the security ink and latent finger print detection. This shows the utility of the developed phosphors in the photonic and forensic applications.

A compact LIBS system for industrial applications

NASA Astrophysics Data System (ADS)

Noharet, B.; Sterner, C.; Irebo, T.; Gurell, J.; Bengtson, A.; Vainik, R.; Karlsson, H.; Illy, E.

2015-03-01

In recent years, laser-induced breakdown spectroscopy (LIBS) has been established as a promising analytical tool for online chemical analysis. The emitted light spectrum is analyzed for instantaneous determination of the elemental composition of the sample, enabling on-line classification of materials. Two major strengths of the technique are the possibilities to perform both fast and remote chemical analysis to determine the elemental composition of the samples under test. In order to reduce the size of LIBS systems, the use of a compact Q-switched diode-pumped solid-state laser (DPSSL) in a LIBS system is evaluated for the industrial sorting of aluminium alloys. The DPSSL, which delivers 150μJ pulses of high beam quality at more than 7KHz repetition rate, provides irradiance on the target that is appropriate for LIBS measurements. The experimental results indicate that alloy classification and quantitative analysis are possible on scrap aluminium samples placed 50 cm apart from the focusing and collecting lenses, without sample preparation. Similar calibration curves and limits of detection are obtained for traditional high-energy low-frequency flashlamp-pumped and low-energy high-frequency diode-pumped lasers, showing the applicability of compact diode-pumped lasers for industrial LIBS applications.

Gas analysis of human exhalation by tunable diode laser spectroscopy

NASA Astrophysics Data System (ADS)

Stepanov, Eugene V.; Moskalenko, Konstantin L.

1993-02-01

Results of the application of a tunable diode laser (TDL) to determining the trace gas components of human exhalation are presented. The analyzer is specially developed to measure both carbon oxides (CO and CO2) in expired air. A few results illuminating possible applications of TDLs in high-sensitivity medical diagnostics have been obtained. For nonsmokers, expired concentrations of CO are slightly higher than those in inhaled air. The specific surplus value seems to be independent of the ambient atmospheric CO content. The surplus CO content increases by more than an order of magnitude just after intensive exercises, e.g., jogging. For smokers, the pharmacokinetic of abundant CO removal from the organism could be investigated by this technique, which provides quick and reliable measurements of smoking status. Breath-holding synchronous measurements of CO and CO2 in exhalation demonstrate behavior that is different with breath-holding time. The method seems useful for the investigation of phenomena such as molecular pulmonary diffusion through the alveolar-capillary membrane and an organism's adaptation to oxygen shortage. Prospects for the development and application of diode laser spectroscopy to trace gas analysis in medicine are also discussed.

Practical guidelines for characterization of O-diglycosyl flavonoid isomers by triple quadrupole MS and their applications for identification of some fruit juices flavonoids.

PubMed

Abad-García, B; Garmón-Lobato, S; Berrueta, L A; Gallo, B; Vicente, F

2009-07-01

Fifteen flavonoid O-diglycosides with different interglycosidic linkage isomery and glycosylation position have been studied in order to analyze their fragmentation patterns. Initial separation was carried out using high performance liquid chromatography with diode array detection (HPLC/DAD) coupled to an electrospray ionization (ESI) interface and a triple quadrupole mass spectrometer. Some useful differences in their MS spectra have been found and discussed. As it has already been reported, [Y*]+/[Y0]+ ratio for flavanones and [Y1]+/[Y0]+ ratio for other flavonoids is specific for each isomeric interglycosidic linkage. In this work it has also been observed that the abundance of these ions is dependent on the position of glycosylation. On the basis of these differences, systematic guidelines for our experimental conditions have been proposed for the differentiation of not only isomeric interglycosidic linkage but also glycosylation position using collision-induced dissociation MS/MS (CID-MS/MS) spectra in positive mode. These results have been successfully applied for the characterization of three diglycosyl flavonoids found in Citrus fruit juices and these conclusions have also been extrapolated for characterizing two triglycosides in the same fruits. Copyright 2009 John Wiley & Sons, Ltd.

Properties and Frequency Conversion of High-Brightness Diode-Laser Systems

NASA Astrophysics Data System (ADS)

Boller, Klaus-Jochen; Beier, Bernard; Wallenstein, Richard

An overview of recent developments in the field of high-power, high-brightness diode-lasers, and the optically nonlinear conversion of their output into other wavelength ranges, is given. We describe the generation of continuous-wave (CW) laser beams at power levels of several hundreds of milliwatts to several watts with near-perfect spatial and spectral properties using Master-Oscillator Power-Amplifier (MOPA) systems. With single- or double-stage systems, using amplifiers of tapered or rectangular geometry, up to 2.85 W high-brightness radiation is generated at wavelengths around 810nm with AlGaAs diodes. Even higher powers, up to 5.2W of single-frequency and high spatial quality beams at 925nm, are obtained with InGaAs diodes. We describe the basic properties of the oscillators and amplifiers used. A strict proof-of-quality for the diode radiation is provided by direct and efficient nonlinear optical conversion of the diode MOPA output into other wavelength ranges. We review recent experiments with the highest power levels obtained so far by direct frequency doubling of diode radiation. In these experiments, 100mW single-frequency ultraviolet light at 403nm was generated, as well as 1W of single-frequency blue radiation at 465nm. Nonlinear conversion of diode radiation into widely tunable infrared radiation has recently yielded record values. We review the efficient generation of widely tunable single-frequency radiation in the infrared with diode-pumped Optical Parametric Oscillators (OPOs). With this system, single-frequency output radiation with powers of more than 0.5W was generated, widely tunable around wavelengths of 2.1,m and 1.65,m and with excellent spectral and spatial quality. These developments are clear indicators of recent advances in the field of high-brightness diode-MOPA systems, and may emphasize their future central importance for applications within a vast range of optical wavelengths.

Tuning of optical and electrical properties of wide band gap Fe:SnO2/Li:NiO p- n junctions using 80 MeV oxygen ion beam

NASA Astrophysics Data System (ADS)

Mistry, Bhaumik V.; Avasthi, D. K.; Joshi, U. S.

2016-12-01

Electrical and optical properties of pristine and swift heavy ion (SHI) irradiated p- n junction diode have been investigated for advanced electronics application. Fe:SnO2/Li:NiO p- n junction was fabricated by using pulsed laser deposition on c-sapphire substrate. The optical band gaps of Fe:SnO2 and Li:NiO films were obtained to be 3.88 and 3.37 eV, respectively. The current-voltage characteristics of the oxide-based p- n junction showed a rectifying behaviour with turn-on voltage of 0.95 V. The oxide-based p- n junction diode was irradiated to 80 MeV O+6 ions with 1 × 1012 ions/cm2 fluence. Decrease in grain size due to SHI irradiation is confirmed by the grazing angle X-ray diffraction and atomic force microscopy. In comparison with the pristine p- n junction diode, O+6 ion irradiated p-n junction diode shows the increase of surface roughness and decrease of percentage transmittance in visible region. For irradiated p- n junction diode, current-voltage curve has still rectifying behaviour but exhibits lower turn-on voltage than that of virgin p- n junction diode.

Effect of Diode Laser Irradiation Combined with Topical Fluoride on Enamel Microhardness of Primary Teeth.

PubMed

Bahrololoomi, Zahra; Lotfian, Malihe

2015-02-01

Laser irradiation has been suggested as an adjunct to traditional caries prevention methods. But little is known about the cariostatic effect of diode laser and most studies available are on permanent teeth.The purpose of the present study was to investigate the effect of diode laser irradiation combined with topical fluoride on enamel surface microhardness. Forty-five primary teeth were used in this in vitro study. The teeth were sectioned to produce 90 slabs. The baseline Vickers microhardness number of each enamel surface was determined. The samples were randomly divided into 3 groups. Group 1: 5% NaF varnish, group 2: NaF varnish+ diode laser at 5 W power and group 3: NaF varnish+ diode laser at 7 W power. Then, the final microhardness number of each surface was again determined. The data were statistically analyzed by repeated measures ANOVA at 0.05 level of significance. In all 3 groups, microhardness number increased significantly after surface treatment (P<0.05). However, Microhardness change after treatment was not significantly different among groups (P >0.05). The combined application of diode laser and topical fluoride varnish on enamel surface did not show any significant additional effect on enamel resistance to caries.

Dosimetric characteristics of a new unshielded silicon diode and its application in clinical photon and electron beams.

PubMed

Griessbach, Irmgard; Lapp, Markus; Bohsung, Jörg; Gademann, Günther; Harder, Dietrich

2005-12-01

Shielded p-silicon diodes, frequently applied in general photon-beam dosimetry, show certain imperfections when applied in the small photon fields occurring in stereotactic or intensity modulated radiotherapy (IMRT), in electron beams and in the buildup region of photon beam dose distributions. Using as a study object the shielded p-silicon diode PTW 60008, well known for its reliable performance in general photon dosimetry, we have identified these imperfections as effects of electron scattering at the metallic parts of the shielding. In order to overcome these difficulties a new, unshielded diode PTW 60012 has been designed and manufactured by PTW Freiburg. By comparison with reference detectors, such as thimble and plane-parallel ionization chambers and a diamond detector, we could show the absence of these imperfections. An excellent performance of the new unshielded diode for the special dosimetric tasks in small photon fields, electron beams and build-up regions of photon beams has been observed. The new diode also has an improved angular response. However, due to its over-response to low-energy scattered photons, its recommended range of use does not include output factor measurements in large photon fields, although this effect can be compensated by a thin auxiliary lead shield.

Design of a quasi-CW laser diode driver for space-based laser transmitter

NASA Astrophysics Data System (ADS)

Singh, Ravindra; Dangwal, Nishma; Chandraprakash, .; Agrawal, Lalita; Pal, Suranjan; Kamlakar, J. A.

2006-12-01

LASTEC Delhi in a joint collaborative activity with LEOS, Bangalore is developing a space qualified diode array pumped Nd:YAG laser transmitter delivering 30 mJ @ 10 pps of 10 ns duration. For space applications laser diodes are preferred because of their excellent reliability with lifetimes exceeding 100,000 hours. However, they are extremely sensitive to electro-static discharge, excessive current levels, and current spikes and transients. Small variations in bias voltage may produce large fluctuations in the current causing instability and damage to the device. Hence instead of the traditional power supplies a current controlled laser diode driver is required. This paper presents the design of a Q-CW laser diode driver based on closed loop current regulator, capable of driving 24 QCW laser diode bars each with 75W peak power at 70 A. The driver can generate up to 100 Amp peak current and 200μsec pulse width operating at 10 Hz. The current source design includes special circuits for low noise operation, slow turn-on and turn-off, circuits for over voltage and transient current protection; and good regulation. Space qualified and radiation hardened components are required to be used to sustain stringent space environment requirements during mission life of two years.

Application of AXUV diode detectors at ASDEX Upgrade

NASA Astrophysics Data System (ADS)

Bernert, M.; Eich, T.; Burckhart, A.; Fuchs, J. C.; Giannone, L.; Kallenbach, A.; McDermott, R. M.; Sieglin, B.

2014-03-01

In the ASDEX Upgrade tokamak, a radiation measurement for a wide spectral range, based on semiconductor detectors, with 256 lines of sight and a time resolution of 5μs was recently installed. In combination with the foil based bolometry, it is now possible to estimate the absolutely calibrated radiated power of the plasma on fast timescales. This work introduces this diagnostic based on AXUV (Absolute eXtended UltraViolet) n-on-p diodes made by International Radiation Detectors, Inc. The measurement and the degradation of the diodes in a tokamak environment is shown. Even though the AXUV diodes are developed to have a constant sensitivity for all photon energies (1 eV-8 keV), degradation leads to a photon energy dependence of the sensitivity. The foil bolometry, which is restricted to a time resolution of less than 1 kHz, offers a basis for a time dependent calibration of the diodes. The measurements of the quasi-calibrated diodes are compared with the foil bolometry and found to be accurate on the kHz time scale. Therefore, it is assumed, that the corrected values are also valid for the highest time resolution (200 kHz). With this improved diagnostic setup, the radiation induced by edge localized modes is analyzed on fast timescales.

Radiation Damage in Si Diodes from Short, Intense Ion Pulses

NASA Astrophysics Data System (ADS)

de Leon, S. J.; Ludewigt, B. A.; Persaud, A.; Seidl, P. A.; Schenkel, T.

2017-10-01

The Neutralized Drift Compression Experiment (NDCX-II) at Berkeley Lab is an induction accelerator studying the effects that concentrated ion beams have on various materials. Charged particle radiation damage was the focus of this research - we have characterized a series of Si diodes using an electrometer and calibrated the diodes response using an 241Am alpha source, both before and after exposing the diodes to 1 MeV He ions in the accelerator. The key part here is that the high intensity pulses from NDCX-II (>1010 ions/cm2 per pulse in <20 ns) enabled a systematic study of dose-rate effects. An example of a dose-rate effect in Si diodes is increased accumulation of defects due to damage from ions that bombard them in a short pulse. This accumulated damage leads to a reduction in the charge collection efficiency and an increase in leakage current. Testing dose-rate effects in Si diodes and other semiconductors is a crucial step in designing sustainable instruments that can encounter high doses of radiation, such as high intensity accelerators, fusion energy experiments and space applications and results from short pulses can inform models of radiation damage evolution. This work was supported by the Office of Science of the US Department of Energy under contract DE-AC0205CH11231.

Tuning the Schottky rectification in graphene-hexagonal boron nitride-molybdenum disulfide heterostructure.

PubMed

Liu, Biao; Zhao, Yu-Qing; Yu, Zhuo-Liang; Wang, Lin-Zhi; Cai, Meng-Qiu

2018-03-01

It was still a great challenge to design high performance of rectification characteristic for the rectifier diode. Lately, a new approach was proposed experimentally to tune the Schottky barrier height (SBH) by inserting an ultrathin insulated tunneling layer to form metal-insulator-semiconductor (MIS) heterostructures. However, the electronic properties touching off the high performance of these heterostructures and the possibility of designing more efficient applications for the rectifier diode were not presently clear. In this paper, the structural, electronic and interfacial properties of the novel MIS diode with the graphene/hexagonal boron nitride/monolayer molybdenum disulfide (GBM) heterostructure had been investigated by first-principle calculations. The calculated results showed that the intrinsic properties of graphene and MoS 2 were preserved due to the weak van der Waals contact. The height of interfacial Schottky barrier can be tuned by the different thickness of hBN layers. In addition, the GBM Schottky diode showed more excellent rectification characteristic than that of GM Schottky diode due to the interfacial band bending caused by the epitaxial electric field. Based on the electronic band structure, we analyzed the relationship between the electronic structure and the nature of the Schottky rectifier, and revealed the potential of utilizing GBM Schottky diode for the higher rectification characteristic devices. Copyright © 2017 Elsevier Inc. All rights reserved.

Scaling the spectral beam combining channel by multiple diode laser stacks in an external cavity

NASA Astrophysics Data System (ADS)

Meng, Huicheng; Ruan, Xu; Du, Weichuan; Wang, Zhao; Lei, Fuchuan; Yu, Junhong; Tan, Hao

2017-04-01

Spectral beam combining of a broad area diode laser is a promising technique for direct diode laser applications. We present an experimental study of three mini-bar stacks in an external cavity on spectral beam combining in conjunction with spatial beam combining. At the pump current of 70 A, a CW output power of 579 W, spectral bandwidth of 18.8 nm and electro-optical conversion efficiency of 47% are achieved. The measured M 2 values of spectral beam combining are 18.4 and 14.7 for the fast and the slow axis, respectively. The brightness of the spectral beam combining output is 232 MW · cm-2 · sr-1.

Optically-Switched Resonant Tunneling Diodes for Space-Based Optical Communication Applications

NASA Technical Reports Server (NTRS)

Moise, T. S.; Kao, Y. -C.; Jovanovic, D.; Sotirelis, P.

1995-01-01

We are developing a new type of digital photo-receiver that has the potential to perform high speed optical-to-electronic conversion with a factor of 10 reduction in component count and power dissipation. In this paper, we describe the room-temperature photo-induced switching of this InP-based device which consists of an InGaAs/AlAs resonant tunneling diode integrated with an InGaAs absorber layer. When illuminated at an irradiance of greater than 5 Wcm(exp -2) using 1.3 micromillimeter radiation, the resonant tunneling diode switches from a high-conductance to a low-conductance electrical state and exhibits a voltage swing of up to 800 mV.

A simple and portable colorimeter using a red-green-blue light-emitting diode and its application to the on-site determination of nitrite and iron in river-water.

PubMed

Suzuki, Yasutada; Aruga, Terutomi; Kuwahara, Hiroyuki; Kitamura, Miki; Kuwabara, Tetsuo; Kawakubo, Susumu; Iwatsuki, Masaaki

2004-06-01

A portable colorimeter using a red-green-blue light-emitting diode as a light source has been developed. An embedded controller sequentially turns emitters on and off, and acquires the signals detected by two photo diodes synchronized with their blinking. The controller calculates the absorbance and displays it on a liquid-crystal display. The whole system, including a 006P dry cell, is contained in a 100 x 70 x 50 mm aluminum case and its mass is 280 g. This colorimeter was successfully applied to the on-site determination of nitrite and iron in river-water.

Excitability and optical pulse generation in semiconductor lasers driven by resonant tunneling diode photo-detectors.

PubMed

Romeira, Bruno; Javaloyes, Julien; Ironside, Charles N; Figueiredo, José M L; Balle, Salvador; Piro, Oreste

2013-09-09

We demonstrate, experimentally and theoretically, excitable nanosecond optical pulses in optoelectronic integrated circuits operating at telecommunication wavelengths (1550 nm) comprising a nanoscale double barrier quantum well resonant tunneling diode (RTD) photo-detector driving a laser diode (LD). When perturbed either electrically or optically by an input signal above a certain threshold, the optoelectronic circuit generates short electrical and optical excitable pulses mimicking the spiking behavior of biological neurons. Interestingly, the asymmetric nonlinear characteristic of the RTD-LD allows for two different regimes where one obtain either single pulses or a burst of multiple pulses. The high-speed excitable response capabilities are promising for neurally inspired information applications in photonics.

High-power femtosecond pulses without a modelocked laser

PubMed Central

Fu, Walter; Wright, Logan G.; Wise, Frank W.

2017-01-01

We demonstrate a fiber system which amplifies and compresses pulses from a gain-switched diode. A Mamyshev regenerator shortens the pulses and improves their coherence, enabling subsequent amplification by parabolic pre-shaping. As a result, we are able to control nonlinear effects and generate nearly transform-limited, 140-fs pulses with 13-MW peak power—an order-of-magnitude improvement over previous gain-switched diode sources. Seeding with a gain-switched diode results in random fluctuations of 2% in the pulse energy, which future work using known techniques may ameliorate. Further development may allow such systems to compete directly with sources based on modelocked oscillators in some applications while enjoying unparalleled robustness and repetition rate control. PMID:29214187

High transmittance hetero junctions based on n-ITO/p-CuO bilayer thin films

NASA Astrophysics Data System (ADS)

Jaya, T. P.; Pradyumnan, P. P.

2016-12-01

Oxide based bilayered n-ITO/p-CuO crystalline diodes were fabricated by plasma vapor deposition using radio frequency magnetron sputtering. The p-n hetero junction diodes were highly transparent in the visible region and exhibits rectifying I-V characteristics. The substrate temperature during fabrication of p-layer CuO was found to have a profound influence on I-V characteristics. The films deposited at substrate temperature of 150 °C and 230 °C exhibited diode ideality factors of (η value) 1.731 and 1.862 respectively. This high ideality factor, combined with an optical transparency of above 70% suggests the potential use of these bi-layers in optoelectronic applications.

Integrated Silicon Carbide Power Electronic Block

DOE Office of Scientific and Technical Information (OSTI.GOV)

Radhakrishnan, Rahul

2017-11-07

Research involved in this project is aimed at monolithically integrating an anti-parallel diode to the SiC MOSFET switch, so as to avoid having to use an external anti-parallel diode in power circuit applications. SiC MOSFETs are replacing Si MOSFETs and IGBTs in many applications, yet the high bandgap of the body diode in SiC MOSFET and consequent need for an external anti-parallel diode increases costs and discourages circuit designers from adopting this technology. Successful demonstration and subsequent commercialization of this technology would reduce SiC MOSFET cost and additionally reduce component count as well as other costs at the power circuitmore » level. In this Phase I project, we have created multiple device designs, set up a process for device fabrication at the 150mm SiC foundry XFAB Texas, demonstrated unit-processes for device fabrication in short loops and started full flow device fabrication. Key findings of the development activity were: The limits of coverage of photoresist over the topology of thick polysilicon structures covered with oxide, which required larger feature dimensions to overcome; and The insufficient process margin for removing oxide spacers from polysilicon field ring features which could result in loss of some features without further process development No fundamental obstacles were uncovered during the process development. Given sufficient time for additional development it is likely that processes could be tuned to realize the monolithically integrated SiC JBS diode and MOSFET. Sufficient funds were not available in this program to resolve processing difficulties and fabricate the devices.« less

Biasable, Balanced, Fundamental Submillimeter Monolithic Membrane Mixer

NASA Technical Reports Server (NTRS)

Siegel, Peter; Schlecht, Erich; Mehdi, Imran; Gill, John; Velebir, James; Tsang, Raymond; Dengler, Robert; Lin, Robert

2010-01-01

This device is a biasable, submillimeter-wave, balanced mixer fabricated using JPL s monolithic membrane process a simplified version of planar membrane technology. The primary target application is instrumentation used for analysis of atmospheric constituents, pressure, temperature, winds, and other physical and chemical properties of the atmospheres of planets and comets. Other applications include high-sensitivity gas detection and analysis. This innovation uses a balanced configuration of two diodes allowing the radio frequency (RF) signal and local oscillator (LO) inputs to be separated. This removes the need for external diplexers that are inherently narrowband, bulky, and require mechanical tuning to change frequency. Additionally, this mixer uses DC bias-ability to improve its performance and versatility. In order to solve problems relating to circuit size, the GaAs membrane process was created. As much of the circuitry as possible is fabricated on-chip, making the circuit monolithic. The remainder of the circuitry is precision-machined into a waveguide block that holds the GaAs circuit. The most critical alignments are performed using micron-scale semiconductor technology, enabling wide bandwidth and high operating frequencies. The balanced mixer gets superior performance with less than 2 mW of LO power. This can be provided by a simple two-stage multiplier chain following an amplifier at around 90 GHz. Further, the diodes are arranged so that they can be biased. Biasing pushes the diodes closer to their switching voltage, so that less LO power is required to switch the diodes on and off. In the photo, the diodes are at the right end of the circuit. The LO comes from the waveguide at the right into a reduced-height section containing the diodes. Because the diodes are in series to the LO signal, they are both turned on and off simultaneously once per LO cycle. Conversely, the RF signal is picked up from the RF waveguide by the probe at the left, and flows rightward to the diodes. Because the RF is in a quasi- TEM (suspended, microstrip-like) mode, it impinges on the diodes in an anti-parallel mode that does not couple to the waveguide mode. This isolates the LO and RF signals. This operation is similar to a cross-bar mixer used at low frequencies, except the RF signal enters through the back-short end of the waveguide rather than through the side. The RF probe also conveys the down-converted intermediate frequency (IF) signal out to an off-chip circuit board through a simple LC low-pass filter to the left as indicated. The bias is brought to the diodes through a bypass capacitor at the top.

Effects of near-infrared LED therapy on experimental tooth replantation in rats.

PubMed

Pigatto Mitihiro, Débora; de Paula Ramos, Solange; Corazza Montero, Janaína; Alves Campos, Aline; de Oliveira Toginho Filho, Dari; Dezan Garbelini, Cassia Cilene

2017-02-01

Dental avulsion damages periodontal tissues and may induce dentoalveolar ankylosis and root resorption after replantation. The aim of this work was to evaluate the effects of light-emitting diode (LED) therapy after tooth replantation. The upper right incisors of 36 male Wistar rats were extracted and replanted after 15 min. The control group (Co, n = 18) was submitted to replantation and the LED group (n = 18) was submitted to replantation and LED therapy (940 nm, 4 J cm -2 ) for three consecutive days (0, 24, and 48 h). Six animals from each group were euthanized at 7, 14, and 21 days for histological analysis. The upper left incisors were used as a negative control. Data were compared using the Fisher exact test, considering P < 0.05. After 7 days, the Co (73.3%) and LED (72.2%) groups presented areas of periodontal ligament necrosis. However, periodontal ligament necrosis was more frequent in the LED group at 14 (70%, P < 0.05) and 21 days (43.2%, P < 0.05) in relation to the Co group (33 and 21.6%). Inflammatory cell infiltration was more frequent in the Co group at 7 days (100%) than the LED group (24.4%, P < 0.05), but increased in the LED group after 21 days (83.3%, P < 0.05). Bone necrosis was more frequent in the LED group after 14 (79%, P < 0.05) and 21 days (60%, P < 0.005) than in the Co group (45% and 20%). Bone repair was evident in the Co group at 14 days. All of the replanted teeth had pulp necrosis. The results suggest that the application of LED therapy up to 48 h after tooth replantation may delay periodontal ligament repair. © 2016 John Wiley & Sons A/S. Published by John Wiley & Sons Ltd.

Diode lasers for direct application by utilizing a trepanning optic for remote oscillation welding of aluminum and copper

NASA Astrophysics Data System (ADS)

Fritsche, Haro; Müller, Norbert; Ferrario, Fabio; Fetissow, Sebastian; Grohe, Andreas; Hagen, Thomas; Steger, Ronny; Katzemaikat, Tristan; Ashkenasi, David; Gries, Wolfgang

2017-02-01

We report the first direct diode laser module integrated with a trepanning optic for remote oscillation welding. The trepanning optic is assembled with a collimated DirectProcess 900 laser engine. This modular laser is based on single emitters and beam combiners to achieve fiber coupled modules with a beam parameter product or BPP < 8 mm mrad at all power levels up to 1 kW, as well as free space collimated outputs with even lower BPP. The initial design consists in vertically stacking several diodes in the fast axis which leads to a rectangular output of about 100 W with BPP of <3.5 mm*mrad in the fast axis and <5 mm*mrad in the slow axis. Next, further power scaling is accomplished by polarization combining and wavelength multiplexing yielding high optical efficiencies of more than 80% and resulting in a building block module with over 500 W launched into a 100 μm fiber with 0.15 NA. The beam profile of the free space module remains rectangular, with a nearly flat top and conserves the beam parameter product of the original vertical stack without the power loss of fiber coupling. The 500 W building blocks feature a highly flexible emitting wavelength bandwidth. New wavelengths can be configured by simply exchanging parts and without modifying the production process. This design principle provides the option to adapt the wavelength configuration to match a broad set of applications, from the UV to the visible and to the far IR depending on the commercial availability of laser diodes. This opens numerous additional applications like laser pumping, scientific and medical applications, as well as materials processing applications such as cutting and welding of copper aluminum or steel. Furthermore, the module's short lead lengths enable very short pulses. Integrated with electronics, the module's pulse width can be adjusted from micro-seconds to cw mode operation by simple software commands. An optical setup can be directly attached instead of a fiber to the laser module thanks to its modular design. This paper's experimental results are based on a trepanning optic attached to the laser module. Alltogether the setup approximately fits in a shoe box and weighs less than 20 kg which allows for direct mounting onto a 3D-gantry system. The oscillating weld performance of the 500 W direct diode laser utilizing a novel trepanning optic is discussed for its application to aluminum/aluminum and aluminum/copper joints.

Effect of radiant heat on conventional glass ionomer cements during setting by using a blue light diode laser system (445 nm).

PubMed

Dionysopoulos, Dimitrios; Tolidis, Kosmas; Strakas, Dimitrios; Gerasimou, Paris; Sfeikos, Thrasyvoulos; Gutknecht, Norbert

2017-04-01

The aim of this in vitro study was to evaluate the effect of radiant heat on surface hardness of three conventional glass ionomer cements (GICs) by using a blue diode laser system (445 nm) and a light-emitting diode (LED) unit. Additionally, the safety of the laser treatment was evaluated. Thirty disk-shaped specimens were prepared of each tested GIC (Equia Fil, Ketac Universal Aplicap and Riva Self Cure). The experimental groups (n = 10) of the study were as follows: group 1 was the control group of the study; in group 2, the specimens were irradiated for 60 s at the top surface using a LED light-curing unit; and in group 3, the specimens were irradiated for 60 s at the top surface using a blue light diode laser system (445 nm). Statistical analysis was performed using one-way ANOVA and Tukey post-hoc tests at a level of significance of a = 0.05. Radiant heat treatments, with both laser and LED devices, increased surface hardness (p < 0.05) but in different extent. Blue diode laser treatment was seemed to be more effective compared to LED treatment. There were no alterations in surface morphology or chemical composition after laser treatment. The tested radiant heat treatment with a blue diode laser may be advantageous for the longevity of GIC restorations. The safety of the use of blue diode laser for this application was confirmed.

An intraocular micro light-emitting diode device for endo-illumination during pars plana vitrectomy.

PubMed

Koelbl, Philipp S; Lingenfelder, Christian; Spraul, Christoph W; Kampmeier, Juergen; Koch, Frank Hj; Kim, Yong Keun; Hessling, Martin

2018-03-01

Development of a new, fiber-free, single-use endo-illuminator for pars plana vitrectomy as a replacement for fiber-based systems with external light sources. The hand-guided intraocularly placed white micro light-emitting diode is evaluated for its illumination properties and potential photochemical and thermal hazards. A micro light-emitting diode was used to develop a single-use intraocular illumination system. The light-source-on-tip device was implemented in a prototype with 23G trocar compatible outer diameter of 0.6 mm. The experimental testing was performed on porcine eyes. All calculations of possible photochemical and thermal hazards during the application of the intraocular micro light-emitting diode were calculated according to DIN EN ISO 15007-2: 2014. The endo-illuminator generated a homogeneous and bright illumination of the intraocular space. The color impression was physiologic and natural. Contrary to initial apprehension, the possible risk caused by inserting a light-emitting diode into the intraocular vitreous was much smaller when compared to conventional fiber-based illumination systems. The photochemical and thermal hazards allowed a continuous exposure time to the retina of at least 4.7 h. This first intraocular light source showed that a light-emitting diode can be introduced into the eye. The system can be built as single-use illumination system. This light-source-on-tip light-emitting diode-endo-illumination combines a chandelier wide-angle illumination with an adjustable endo-illuminator.

Thin film application device and method for coating small aperture vacuum vessels

DOEpatents

Walters, Dean R; Este, Grantley O

2015-01-27

A device and method for coating an inside surface of a vessel is provided. In one embodiment, a coating device comprises a power supply and a diode in electrical communication with the power supply, wherein electrodes comprising the diode reside completely within the vessel. The method comprises reversibly sealing electrodes in a vessel, sputtering elemental metal or metal compound on the surface while maintaining the surface in a controlled atmosphere.

Blood flow measurement in extracorporeal circulation using self-mixing laser diode

NASA Astrophysics Data System (ADS)

Cattini, Stefano; Norgia, Michele; Pesatori, Alessandro; Rovati, Luigi

2010-02-01

To measure blood flow rate in ex-vivo circulation, we propose an optical Doppler flowmeter based on the self-mixing effect within a laser diode (SM-LD). Advantages in adopting SM-LD techniques derive from reduced costs, ease of implementation and limited size. Moreover, the provided contactless sensing allows sensor reuse, hence further cost reduction. Preliminary measurements performed on bovine blood are reported, thus demonstrating the applicability of the proposed measurement method.

High-Power Pinched-Beam Diode Development for Radiographic Applications

DTIC Science & Technology

2007-06-01

reentrant rods. II. X-RAY DIAGNOSTICS The x-ray dose is measured using CaF2 thermoluminescent dosimeters ( TLDs ) enclosed in 1-cm- diam...1.5-mm spot size. This paper reports on studies of the rod-pinch (RP) diode [3], comprising a small anode rod and an annular cathode. Electrons ...because the electrons impact the rod primarily in the backwards direction. As the voltage increases, the x- radiation becomes more forward-peaked

High-performance single nanowire tunnel diodes.

PubMed

Wallentin, Jesper; Persson, Johan M; Wagner, Jakob B; Samuelson, Lars; Deppert, Knut; Borgström, Magnus T

2010-03-10

We demonstrate single nanowire tunnel diodes with room temperature peak current densities of up to 329 A/cm(2). Despite the large surface to volume ratio of the type-II InP-GaAs axial heterostructure nanowires, we measure peak to valley current ratios (PVCR) of up to 8.2 at room temperature and 27.6 at liquid helium temperature. These sub-100-nm-diameter structures are promising components for solar cells as well as electronic applications.

High-Gain AlxGa1-xAs/GaAs Transistors For Neural Networks

NASA Technical Reports Server (NTRS)

Kim, Jae-Hoon; Lin, Steven H.

1991-01-01

High-gain AlxGa1-xAs/GaAs npn double heterojunction bipolar transistors developed for use as phototransistors in optoelectronic integrated circuits, especially in artificial neural networks. Transistors perform both photodetection and saturating-amplification functions of neurons. Good candidates for such application because structurally compatible with laser diodes and light-emitting diodes, detect light, and provide high current gain needed to compensate for losses in holographic optical elements.

MQW Optical Feedback Modulators And Phase Shifters

NASA Technical Reports Server (NTRS)

Jackson, Deborah J.

1995-01-01

Laser diodes equipped with proposed multiple-quantum-well (MQW) optical feedback modulators prove useful in variety of analog and digital optical-communication applications, including fiber-optic signal-distribution networks and high-speed, low-crosstalk interconnections among super computers or very-high-speed integrated circuits. Development exploits accompanying electro-optical aspect of QCSE - variation in index of refraction with applied electric field. Also exploits sensitivity of laser diodes to optical feedback. Approach is reverse of prior approach.

Solid-state X-band Combiner Study

NASA Technical Reports Server (NTRS)

Pitzalis, O., Jr.; Russell, K. J.

1979-01-01

The feasibility of developing solid-state amplifiers at 4 and 10 GHz for application in spacecraft altimeters was studied. Bipolar-transistor, field-effect-transistor, and Impatt-diode amplifier designs based on 1980 solid-state technology are investigated. Several output power levels of the pulsed, low-duty-factor amplifiers are considered at each frequency. Proposed transistor and diode amplifier designs are illustrated in block diagrams. Projections of size, weight, and primary power requirements are given for each design.

75 FR 12175 - Application(s) for Duty-Free Entry of Scientific Instruments

Federal Register 2010, 2011, 2012, 2013, 2014

2010-03-15

..., 1301 Beal Avenue, Ann Arbor, MI 49109-2122. Instrument: Tester for TFT Imager. Manufacturer: Siemens AG... capability of amorphous silicon TFT and organic photo-diode. This instrument must be capable of measuring...

Widely tunable (PbSn)Te lasers using etched cavities for mass production. [for infrared spectroscopic applications

NASA Technical Reports Server (NTRS)

Miller, M. D.

1980-01-01

Lead salt diode lasers are being used increasingly as tunable sources of monochromatic infrared radiation in a variety of spectroscopic systems. These devices are particularly useful, both in the laboratory and in the field, because of their high spectral brightness (compared to thermal sources) and wide spectral coverage (compared to line-tunable gas lasers). While the primary commercial application of these lasers has been for ultrahigh resolution laboratory spectroscopy, there are numerous systems applications, including laser absorbtion pollution monitors and laser heterodyne radiometers, for which diode lasers have great potential utility. Problem areas related to the wider use of these components are identified. Among these are total tuning range, mode control, and high fabrication cost. A fabrication technique which specifically addresses the problems of tuning range and cost, and which also has potential application for mode control, is reported.

Experimental study of self magnetic pinch diode as flash radiography source at 4 megavolt

DOE Office of Scientific and Technical Information (OSTI.GOV)

Etchessahar, Bertrand; Bicrel, Béatrice; Cassany, Bruno

2013-10-15

The Self Magnetic Pinch (SMP) diode is a potential high-brightness X-ray source for high voltage generators (2–10 MV) that has shown good reliability for flash radiography applications [D. D. Hinchelwood et al., “High power self-pinch diode experiments for radiographic applications” IEEE Trans. Plasma Sci. 35(3), 565–572 (2007)]. We have studied this diode at about 4 MV, driven by the ASTERIX generator operated at the CEA/GRAMAT [G. Raboisson et al., “ASTERIX, a high intensity X-ray generator,” in Proceedings of the 7th IEEE Pulsed Power Conference (1989), pp. 567–570]. This generator, made up of a capacitor bank and a Blumlein line, wasmore » initially designed to test the behavior of electronic devices under irradiation. In our experiments, the vacuum diode is modified in order to set up flash radiographic diodes. A previous set of radiographic experiments was carried out on ASTERIX with a Negative Polarity Rod Pinch (NPRP) diode [B. Etchessahar et al., “Study and optimization of negative polarity rod pinch diode as flash radiography source at 4.5 MV,” Phys. Plasmas 19(9), 093104 (2012)]. The SMP diode which is examined in the present study provides an alternative operating point on the same generator and a different radiographic performance: 142 ± 11 rad at 1 m dose (Al) for a 3.46 ± 0.42 mm spot size (1.4× FWHM of the LSF). This performance is obtained in a reproducible and robust nominal configuration. However, several parametric variations were also tested, such as cathode diameter and anode/cathode gap. They showed that an even better performance is accessible after optimization, in particular, a smaller spot size (<3 mm). Numbers of electrical, optical, and X-ray diagnostics have been implemented in order to gain more insight in the diode physics and to optimize it further. For the first time in France, visible and laser imaging of the SMP diode has been realized, from a radial point of view, thus, providing key information on the electrode plasmas evolution, responsible for the gap closure.« less

Progress In Optical Memory Technology

NASA Astrophysics Data System (ADS)

Tsunoda, Yoshito

1987-01-01

More than 20 years have passed since the concept of optical memory was first proposed in 1966. Since then considerable progress has been made in this area together with the creation of completely new markets of optical memory in consumer and computer application areas. The first generation of optical memory was mainly developed with holographic recording technology in late 1960s and early 1970s. Considerable number of developments have been done in both analog and digital memory applications. Unfortunately, these technologies did not meet a chance to be a commercial product. The second generation of optical memory started at the beginning of 1970s with bit by bit recording technology. Read-only type optical memories such as video disks and compact audio disks have extensively investigated. Since laser diodes were first applied to optical video disk read out in 1976, there have been extensive developments of laser diode pick-ups for optical disk memory systems. The third generation of optical memory started in 1978 with bit by bit read/write technology using laser diodes. Developments of recording materials including both write-once and erasable have been actively pursued at several research institutes. These technologies are mainly focused on the optical memory systems for computer application. Such practical applications of optical memory technology has resulted in the creation of such new products as compact audio disks and computer file memories.

Room temperature high power mid-IR diode laser bars for atmospheric sensing applications

NASA Astrophysics Data System (ADS)

Crump, Paul; Patterson, Steve; Dong, Weimin; Grimshaw, Mike; Wang, Jun; Zhang, Shiguo; Elim, Sandrio; Bougher, Mike; Patterson, Jason; Das, Suhit; Wise, Damian; Matson, Triston; Balsley, David; Bell, Jake; DeVito, Mark; Martinsen, Rob

2007-04-01

Peak CW optical power from single 1-cm diode laser bars is advancing rapidly across all commercial wavelengths and the available range of emission wavelengths also continues to increase. Both high efficiency ~ 50% and > 100-W power InP-based CW bars have been available in bar format around 1500-nm for some time, as required for eye-safe illuminators and for pumping Er-YAG crystals. There is increasing demand for sources at longer wavelengths. Specifically, 1900-nm sources can be used to pump Holmium doped YAG crystals, to produce 2100-nm emission. Emission near 2100-nm is attractive for free-space communications and range-finding applications as the atmosphere has little absorption at this wavelength. Diode lasers that emit at 2100-nm could eliminate the need for the use of a solid-state laser system, at significant cost savings. 2100-nm sources can also be used as pump sources for Thulium doped solid-state crystals to reach even longer wavelengths. In addition, there are several promising medical applications including dental applications such as bone ablation and medical procedures such as opthamology. These long wavelength sources are also key components in infra-red-counter-measure systems. We have extended our high performance 1500-nm material to longer wavelengths through optimization of design and epitaxial growth conditions and report peak CW output powers from single 1-cm diode laser bars of 37W at 1910-nm and 25W at 2070-nm. 1-cm bars with 20% fill factor were tested under step-stress conditions up to 110-A per bar without failure, confirming reasonable robustness of this technology. Stacks of such bars deliver high powers in a collimated beam suitable for pump applications. We demonstrate the natural spectral width of ~ 18nm of these laser bars can be reduced to < 3-nm with use of an external Volume Bragg Grating, as required for pump applications. We review the developments required to reach these powers, latest advances and prospects for longer wavelength, higher power and higher efficiency.

Ablation of dentin by irradiation of violet diode laser

NASA Astrophysics Data System (ADS)

Hatayama, H.; Kato, J.; Akashi, G.; Hirai, Y.; Inoue, A.

2006-02-01

Several lasers have been used for clinical treatment in dentistry. Among them, diode lasers are attractive because of their compactness compared with other laser sources. Near-infrared diode lasers have been practically used for cutting soft tissues. Because they penetrate deep to soft tissues, they cause sufficiently thick coagulation layer. However, they aren't suitable for removal of carious dentin because absorption by components in dentin is low. Recently, a violet diode laser with a wavelength of 405nm has been developed. It will be effective for cavity preparation because dentin contains about 20% of collagen whose absorption coefficient at a violet wavelength is larger than that at a near-infrared wavelength. In this paper, we examined cutting performance of the violet diode laser for dentin. To our knowledge, there have been no previous reports on application of a violet laser to dentin ablation. Bovine teeth were irradiated by continuous wave violet diode laser with output powers in a range from 0.4W to 2.4W. The beam diameter on the sample was about 270μm and an irradiation time was one second. We obtained the crater ablated at more than an output power of 0.8W. The depth of crater ranged from 20μm at 0.8W to 90μm at 2.4W. Furthermore, the beam spot with an output power of 1.7W was scanned at a speed of 1mm/second corresponding to movement of a dentist's hand in clinical treatment. Grooves with the depth of more than 50μm were also obtained. From these findings, the violet diode laser has good potential for cavity preparation. Therefore, the violet diode laser may become an effective tool for cavity preparation.

Electrolyte diodes with weak acids and bases. I. Theory and an approximate analytical solution.

PubMed

Iván, Kristóf; Simon, Péter L; Wittmann, Mária; Noszticzius, Zoltán

2005-10-22

Until now acid-base diodes and transistors applied strong mineral acids and bases exclusively. In this work properties of electrolyte diodes with weak electrolytes are studied and compared with those of diodes with strong ones to show the advantages of weak acids and bases in these applications. The theoretical model is a one dimensional piece of gel containing fixed ionizable groups and connecting reservoirs of an acid and a base. The electric current flowing through the gel is measured as a function of the applied voltage. The steady-state current-voltage characteristic (CVC) of such a gel looks like that of a diode under these conditions. Results of our theoretical, numerical, and experimental investigations are reported in two parts. In this first, theoretical part governing equations necessary to calculate the steady-state CVC of a reverse-biased electrolyte diode are presented together with an approximate analytical solution of this reaction-diffusion-ionic migration problem. The applied approximations are quasielectroneutrality and quasiequilibrium. It is shown that the gel can be divided into an alkaline and an acidic zone separated by a middle weakly acidic region. As a further approximation it is assumed that the ionization of the fixed acidic groups is complete in the alkaline zone and that it is completely suppressed in the acidic one. The general solution given here describes the CVC and the potential and ionic concentration profiles of diodes applying either strong or weak electrolytes. It is proven that previous formulas valid for a strong acid-strong base diode can be regarded as a special case of the more general formulas presented here.

Reflectors with directional-mixed reflection properties for application in luminaries with high-power LED diodes

NASA Astrophysics Data System (ADS)

Zaremba, Krzysztof

2008-06-01

Application of directional-mixed reflectors results in a luminance decrease of the apparent image of light emitting diodes (LEDs), which is advantageous as far as glare reduction is concerned. On the other hand, reflectors have a negative impact on luminous intensity curves of the luminaries. This work analyzes an impact of surfaces with directional-mixed reflection properties in a mirror reflector designed for a luminary equipped with high-power LEDs. We present an algorithm used to determine the shape of the reflector of the surface with small scattering, where the axis twist angle for a parabolic reflector varies in a predefined range and follows a power function.

Application of the SEM to the measurement of solar cell parameters

NASA Technical Reports Server (NTRS)

Weizer, V. G.; Andrews, C. W.

1977-01-01

Techniques are described which make use of the SEM to measure the minority carrier diffusion length and the metallurgical junction depth in silicon solar cells. The former technique permits the measurement of the true bulk diffusion length through the application of highly doped field layers to the back surfaces of the cells being investigated. It is shown that the secondary emission contrast observed in the SEM on a reverse-biased diode can depict the location of the metallurgical junction if the diode has been prepared with the proper beveled geometry. The SEM provides the required contrast and the option of high magnification, permitting the measurement of extremely shallow junction depths.

A Frequency Reconfigurable MIMO Antenna System for Cognitive Radio Applications

NASA Astrophysics Data System (ADS)

Raza, A.; Khan, Muhammad U.; Tahir, Farooq A.

2017-10-01

In this paper, a two element frequency reconfigurable multiple-input-multiple-output (MIMO) antenna system is presented. The proposed antenna consists of miniaturized patch antenna elements, loaded with varactor diodes to achieve frequency reconfigurability. The antenna has bandwidth of 30 MHz and provides a smooth frequency sweep from 2.12 GHz to 2.4 GHz by varying the reverse bias voltage of varactor diode. The antenna is designed on an FR4 substrate and occupies a space of 50×100 × 0.8 mm3. The antenna is analyzed for its far-field characteristics as well as for MIMO performance parameters. Designed antenna showed good performance and is suitable for cognitive radios (CR) applications.

Frequency Reconfigurable Antenna for Deca-Band 5 G/LTE/WWAN Mobile Terminal Applications

NASA Astrophysics Data System (ADS)

Yang, Lingsheng; Cheng, Biyu; Jia, Hongting

2018-04-01

In this paper, a frequency reconfigurable antenna for 5 G/LTE/WWAN mobile terminal applications is presented. The proposed antenna consists of a radiation element which is folded on a dielectric cuboid. Four PIN diodes located on the antenna element are used for frequency reconfigration. By controlling the states of four PIN diodes with an 8-bit microcontroller, a broad band which can cover deca-band as LTE700/2300/2500, GSM850/900/1800/1900, UMTS 2100, WLAN2400 and the future 5 G or LTE3600 is obtained with a compacted size of 40×8×5mm3. The antenna gain, efficiency and radiation characteristics are also shown.

GaAs-based resonant tunneling diode (RTD) epitaxy on Si for highly sensitive strain gauge applications

PubMed Central

2013-01-01

As a highly sensitive strain gauge element, GaAs-based resonant tunneling diode (RTD) has already been applied in microelectromechanical system (MEMS) sensors. Due to poor mechanical properties and high cost, GaAs-based material has been limited in applications as the substrate for MEMS. In this work, we present a method to fabricate the GaAs-based RTD on Si substrate. From the experimental results, it can be concluded that the piezoresistive coefficient achieved with this method reached 3.42 × 10−9 m2/N, which is about an order of magnitude higher than the Si-based semiconductor piezoresistors. PMID:23651496

Millimeter-wave and optoelectronic applications of heterostructure integrated circuits

NASA Technical Reports Server (NTRS)

Pavlidis, Dimitris

1991-01-01

The properties are reviewed of heterostructure devices for microwave-monolithic-integrated circuits (MMICs) and optoelectronic integrated circuits (OICs). Specific devices examined include lattice-matched and pseudomorphic InAlAs/InGaAs high-electron mobility transistors (HEMTs), mixer/multiplier diodes, and heterojunction bipolar transistors (HBTs) developed with a number of materials. MMICs are reviewed that can be employed for amplification, mixing, and signal generation, and receiver/transmitter applications are set forth for OICs based on GaAs and InP heterostructure designs. HEMTs, HBTs, and junction-FETs can be utilized in combination with PIN, MSM, and laser diodes to develop novel communication systems based on technologies that combine microwave and photonic capabilities.

Millimeter-wave and optoelectronic applications of heterostructure integrated circuits

NASA Astrophysics Data System (ADS)

Pavlidis, Dimitris

1991-02-01

The properties are reviewed of heterostructure devices for microwave-monolithic-integrated circuits (MMICs) and optoelectronic integrated circuits (OICs). Specific devices examined include lattice-matched and pseudomorphic InAlAs/InGaAs high-electron mobility transistors (HEMTs), mixer/multiplier diodes, and heterojunction bipolar transistors (HBTs) developed with a number of materials. MMICs are reviewed that can be employed for amplification, mixing, and signal generation, and receiver/transmitter applications are set forth for OICs based on GaAs and InP heterostructure designs. HEMTs, HBTs, and junction-FETs can be utilized in combination with PIN, MSM, and laser diodes to develop novel communication systems based on technologies that combine microwave and photonic capabilities.

Single diode laser sensor for wide-range H2O temperature measurements.

PubMed

Gharavi, Mohammadreza; Buckley, Steven G

2004-04-01

A single diode laser absorption sensor (near 1477 nm) useful for simultaneous temperature and H2O concentration measurements is developed. The diode laser tunes approximately 1.2 cm(-1) over three H2O absorption transitions in each measurement. The line strengths of the transitions are measured over a temperature range from 468 to 977 K, based on high-resolution absorption measurements in a heated static cell. The results indicate that the selected transitions are suitable for sensitive temperature measurements in atmospheric pressure combustion systems using absorption line ratios. Comparing the results with HITRAN 96 data, it appears that these transitions will be sensitive over a wide range of temperatures (450-2000 K), suggesting applicability for combustion measurements.

Efficient, frequency-stable laser-diode-pumped Nd:YAG laser

NASA Technical Reports Server (NTRS)

Zhou, B.; Kane, T. J.; Dixon, G. J.; Byer, R. L.

1985-01-01

One of the main goals of the study was to demonstrate a low-power efficient Nd:YAG laser oscillator for applications in remote coherent Doppler anemometry. An electrical-to-optical slope efficiency of 6.5 percent has been achieved by using commercially available CW laser diodes of up to 100 mW to pump monolithic Nd:YAG rod lasers. The observed Nd:YAG oscillation threshold is at 2.3 mW of laser-diode output power, i.e., a small fraction of the rated output power. The highest Nd:YAG CW output power reached is 4.4 mW at an overall electrical-to-optical efficiency of 1.5 percent. The frequency jitter is less than 10 kHz in 0.3 s.

Development and thermal management of 10 kW CW, direct diode laser source

NASA Astrophysics Data System (ADS)

Zhu, Hongbo; Hao, Mingming; Zhang, Jianwei; Ji, Wenyu; Lin, Xingchen; Zhang, Jinsheng; Ning, Yongqiang

2016-01-01

We report on the development of direct diode laser source with high-power and high reliability. The laser source was realized by the polarization and wavelength combination of four diode laser stacks. When at the operating current of 122 A, the source was capable of producing 10,120 W output while maintaining 46% electro-optical conversion efficiency. The maximum temperature on the lens was decreased from 442.2 K to 320 K by utilizing an efficient thermal dissipation structure, and the corresponding maximum von Mises stress was reduced from 75.4 MPa to 14 MPa. In addition, a reliability test demonstrated that our laser source was reliable and potential in the applications of laser cladding and heat treatment.

Organic light-emitting diodes from homoleptic square planar complexes

DOEpatents

Omary, Mohammad A

2013-11-12

Homoleptic square planar complexes [M(N.LAMBDA.N).sub.2], wherein two identical N.LAMBDA.N bidentate anionic ligands are coordinated to the M(II) metal center, including bidentate square planar complexes of triazolates, possess optical and electrical properties that make them useful for a wide variety of optical and electrical devices and applications. In particular, the complexes are useful for obtaining white or monochromatic organic light-emitting diodes ("OLEDs"). Improved white organic light emitting diode ("WOLED") designs have improved efficacy and/or color stability at high brightness in single- or two-emitter white or monochrome OLEDs that utilize homoleptic square planar complexes, including bis[3,5-bis(2-pyridyl)-1,2,4-triazolato]platinum(II) ("Pt(ptp).sub.2").

An overview of self-switching diode rectifiers using green materials

NASA Astrophysics Data System (ADS)

Kasjoo, Shahrir Rizal; Zailan, Zarimawaty; Zakaria, Nor Farhani; Isa, Muammar Mohamad; Arshad, Mohd Khairuddin Md; Taking, Sanna

2017-09-01

A unipolar two-terminal nanodevice, known as the self-switching diode (SSD), has recently been demonstrated as a room-temperature rectifier at microwave and terahertz frequencies due to its nonlinear current-voltage characteristic. The planar architecture of SSD not only makes the fabrication process of the device faster, simpler and at a lower cost when compared with other rectifying diodes, but also allows the use of various materials to realize and fabricate SSDs. This includes the utilization of `green' materials such as organic and graphene thin films for environmental sustainability. This paper reviews the properties of current `green' SSD rectifiers with respect to their operating frequencies and rectifying performances, including responsivity and noise-equivalent power of the devices, along with the applications.

Wide-Band Monolithic Acoustoelectric Memory Correlators.

DTIC Science & Technology

1982-11-01

piezoelectric and non- earlier analysis of thin- oxide varactors . The new analysis ex- conducting. Tapped structures which satisfy this criterion are plains...for tapped LiNbO3/metal- oxide - important realization. The logical consequence is that only silicon [26] structures is, in fact, not applicable here. It...Clarke, "The GaAs SAW depletion layer of’ the diode array. A more complex structure, diode storage correlalor," in 1980 Ultrasonics Synp. Proc., pp a GaAs

Evaluation of in vivo dose measurements for patients undergoing electron boost treatments.

PubMed

Verney, J N; Morgan, A M

2001-06-01

This study evaluated p-type silicon diodes for use in in vivo dosimetry in clinical electron beams. A calibrated p-type silicon diode detector was used to measure the dose received by the patient in the centre of the field. Readings were corrected for energy, temperature and stand-off of the electron applicator from the patient surface. The mean difference between measured and prescribed dose was 1.04% (95% CI 0.72 to 1.36 %).

A reconfigurable frequency-selective surface for dual-mode multi-band filtering applications

NASA Astrophysics Data System (ADS)

Majidzadeh, Maryam; Ghobadi, Changiz; Nourinia, Javad

2017-03-01

A reconfigurable single-layer frequency-selective surface (FSS) with dual-mode multi-band modes of operation is presented. The proposed structure is printed on a compact 10 × 10 mm2 FR4 substrate with the thickness of 1.6 mm. A simple square loop is printed on the front side while another one along with two defected vertical arms is deployed on the backside. To realise the reconfiguration, two pin diodes are embedded on the backside square loop. Suitable insertion of conductive elements along with pin diodes yields in dual-mode multi-band rejection of applicable in service frequency ranges. The first operating mode due to diodes' 'ON' state provides rejection of 2.4 GHz WLAN in 2-3 GHz, 5.2/5.8 GHz WLAN and X band in 5-12 GHz, and a part of Ku band in 13.9-16 GHz. In diodes 'OFF' state, the FSS blocks WLAN in 4-7.3 GHz, X band in 8-12.7 GHz as well as part of Ku band in 13.7-16.7 GHz. As well, high attenuation of incident waves is observed by a high shielding effectiveness (SE) in the blocked frequency bands. Also, a stable behaviour against different polarisations and angles of incidence is obtained. Comprehensive studies are conducted on a fabricated prototype to assess its performance from which encouraging results are obtained.

Diode laser assisted minimal invasive sphenoidotomy for endoscopic transphenoidal pituitary surgery: our technique and results.

PubMed

Lee, Jih-Chin; Lai, Wen-Sen; Ju, Da-Tong; Chu, Yueng-Hsiang; Yang, Jinn-Moon

2015-03-01

During endoscopic sinus surgery (ESS), intra-operative bleeding can significantly compromise visualization of the surgical field. The diode laser that provides good hemostatic and vaporization effects and excellent photocoagulation has been successfully applied in endoscopic surgery with several advantages. The current retrospective study demonstrates the feasibility of diode laser-combined endoscopic sinus surgery on sphenoidotomy. The patients who went through endoscopic transphenoidal pituitary surgery were enrolled. During the operation, the quality of the surgical field was assessed and graded by the operating surgeon using the scale proposed by Boezaart. The mean operation time was 37.80 ± 10.90 minutes. The mean score on the quality of surgical field was 1.95. A positive correlation between the lower surgical field quality score and the shorter surgical time was found with statistical significance (P < 0.0001). No infections, hemorrhages, or other complications occurred intra- or post-operatively. The diode laser-assisted sphenoidotomy is a reliable and safe approach of pituitary gland surgery with minimal invasiveness. It is found that application of diode laser significantly improved quality of surgical field and shortened operation time. © 2015 Wiley Periodicals, Inc.

Measuring Multi-Megavolt Diode Voltages

NASA Astrophysics Data System (ADS)

Pereira, N. R.; Swanekamp, S. B.; Weber, B. V.; Commisso, R. J.; Hinshelwood, D. D.; Stephanakis, S. J.

2002-12-01

The voltage in high-power diodes can be determined by measuring the Compton electrons generated by the diode's bremsstrahlung radiation. This technique is implemented with a Compton-Hall (C-H) voltmeter that collimates the bremsstrahlung onto a Compton target and bends the emitted Compton electron orbits off to the side with an applied magnetic field off to Si pin diode detectors. Voltage is determined from the ratio of the Compton electron dose to the forward x-ray dose. The instrument's calibration and response are determined from coupled electron/photon transport calculations. The applicable voltage range is tuned by adjusting the position of the electron detector relative to the Compton target or by varying the magnetic field strength. The instrument was used to obtain time-dependent voltage measurements for a pinched-beam diode whose voltage is enhanced by an upstream opening switch. In this case, plasmas and vacuum electron flow from the opening switch make it difficult to determine the voltage accurately from electrical measurements. The C-H voltmeter gives voltages that are significantly higher than those obtained from electrical measurements but are consistent with measurements of peak voltage based on nuclear activation of boron-nitride targets.

Characterization of constituents in Stellera chamaejasme L. by rapid-resolution liquid chromatography-diode array detection and electrospray ionization time-of-flight mass spectrometry.

PubMed

Zhao, Liang; Lou, Zi-Yang; Zhu, Zhen-Yu; Zhang, Guo-Qing; Chai, Yi-Feng

2008-01-01

A reliable and rapid method based on rapid-resolution liquid chromatography-diode array detection (RRLC-DAD) and electrospray ionization time-of-flight mass spectrometry (ESI-TOF/MS) has been developed for the isolation and characterization of multiple constituents in the root of Stellera chamaejasme L., which was extracted by sonication with methanol in an optimized procedure. Separation of the multiple constituents was achieved on an Agilent Zorbax XDB-C18 (50x3.0 mm i.d.; 1.8 microm) column using a gradient elution at a flow rate of 0.4 mL/min. The detection wavelength was 210 nm. Mass spectra were acquired in both positive and negative modes. A formula database of the known chemical constituents in the root of Stellera chamaejasme L. was established by an Agilent software. Twenty-two obvious peaks appeared in the total ion chromatogram and nine of them were characterized by TOF/MS. The RRLC-DAD and ESI-TOF/MS method with ultrasonic extraction would be useful for rapid and effective characterization of chemical constituents in the root of Stellera chamaejasme L. Copyright (c) 2007 John Wiley & Sons, Ltd.

Characterization of constituents in Sini decoction and rat plasma by high-performance liquid chromatography with diode array detection coupled to time-of-flight mass spectrometry.

PubMed

Tan, Guangguo; Zhu, Zhenyu; Jing, Jing; Lv, Lei; Lou, Ziyang; Zhang, Guoqing; Chai, Yifeng

2011-08-01

A high-performance liquid chromatography with diode-array detection coupled to time-of-flight mass spectrometry (HPLC/DAD/TOFMS) method was established to clarify the chemical composition of Sini decoction (SND) and rat plasma after oral administration of SND. With dynamic adjustment of fragmentor voltage in TOFMS, an efficient transmission of the ions was achieved to obtain the best sensitivity for providing the molecular formula for each analyte and abundant fragment ions for structural information. By accurate mass measurements within 5 ppm error for each molecular ion and subsequent fragment ions, 53 compounds including diterpenoid alkaloids, flavonoids, triterpenoids and gingerol-related compounds were identified in SND. Major compounds identified from SND were further assigned in the three individual herbs. After oral administration of SND, 33 compounds and five metabolites in rat plasma were detected and identified by comparing and contrasting the compounds measured in SND with those in the plasma samples by HPLC/DAD/TOFMS. The results provided helpful chemical information for further pharmacology and active mechanism research on SND. Copyright © 2010 John Wiley & Sons, Ltd.

Screening and analysis of the multiple absorbed bioactive components and metabolites in rat plasma after oral administration of Jitai tablets by high-performance liquid chromatography/diode-array detection coupled with electrospray ionization tandem mass spectrometry.

PubMed

Wang, Shu-Ping; Liu, Lei; Wang, Ling-Ling; Jiang, Peng; Zhang, Ji-Quan; Zhang, Wei-Dong; Liu, Run-Hui

2010-06-15

Based on the serum pharmacochemistry technique and high-performance liquid chromatography/diode-array detection (HPLC/DAD) coupled with electrospray tandem mass spectrometry (HPLC/ESI-MS/MS), a method for screening and analysis of the multiple absorbed bioactive components and metabolites of Jitai tablets (JTT) in orally dosed rat plasma was developed. Plasma was treated by methanol precipitation prior to liquid chromatography, and the separation was carried out on a Symmetry C(18) column, with a linear gradient (0.1% formic acid/water/acetonitrile). Mass spectra were acquired in negative and positive ion modes, respectively. As a result, 26 bioactive components originated from JTT and 5 metabolites were tentatively identified in orally dosed rat plasma by comparing their retention times and MS spectra with those of authentic standards and literature data. It is concluded that an effective and reliable analytical method was set up for screening the bioactive components of Chinese herbal medicine, which provided a meaningful basis for further pharmacology and active mechanism research of JTT. Copyright (c) 2010 John Wiley & Sons, Ltd.

A study of thermal conductivity in graphene diodes and transistors with intrinsic defects and subjected to metal impurities

NASA Astrophysics Data System (ADS)

Sadeghzadeh, Sadegh; Rezapour, Navid

2016-12-01

In this paper, the effect of the presence of cavities resulting from the fabrication process and the effect of common metal impurities added during the synthesis process on the thermal conductivity of single-layer graphene sheets, diodes and transistors have been investigated by using the Reverse Non Equilibrium Molecular Dynamics (RNEMD) method. The obtained results show that thermal conductivity generally diminishes by increasing the concentration of nanoparticles and increases when porosities and impurities are at the edges of sheets. Regarding a better thermal management in graphene with the addition of nanoparticles, and considering its existing porosity, a lower thermal conductivity is achieved by adding more nanoparticles. By increasing the diameter of pores from 0.5 nm to 4.4 nm in a specific single-layer graphene sheet, thermal conductivity diminishes from 67 W/mk to 1.43 W/mk; while it diminishes from 45 to 1.0 W/mk for the same structure containing both the defects and nanoparticles over the defects. In evaluating the influences of cavities and metallic nanoparticles on thermal conductivity, it was observed that changing the share of cavities or nanoparticles has a significant effect on the thermal conductivity of graphene diodes and transistors. The rectification efficiency of diodes diminished from about 100% for the defect-free diode to about 19% for the diode containing 2 nm cavities and then increased to 75% for the diode with 5 nm cavities. While, with the increase in the concentration of iron nanoparticles, the rectification efficiency increased from about 100% for the diode with no iron particles to about 255% for the diode containing 13 wt % of iron particles. Final results demonstrate that the metallic nanoparticles and also defects with specific diameters can be effectively exploited to increase or decrease the efficiency of nanodiodes and nanotransistors. This leads to engineered design of nanodiodes and nanotransistors for various applications.

4H-SiC p i n diodes grown by sublimation epitaxy in vacuum (SEV) and their application as microwave diodes

NASA Astrophysics Data System (ADS)

Camara, N.; Zekentes, K.; Zelenin, V. V.; Abramov, P. L.; Kirillov, A. V.; Romanov, L. P.; Boltovets, N. S.; Krivutsa, V. A.; Thuaire, A.; Bano, E.; Tsoi, E.; Lebedev, A. A.

2008-02-01

Sublimation epitaxy under vacuum (SEV) was investigated as a method for growing 4H-SiC epitaxial structures for p-i-n diode fabrication. The SEV-grown 4H-SiC material was investigated with scanning electron microscopy (SEM), atomic force microscopy (AFM), x-ray diffraction, photo-luminescence spectroscopy (PL), cathodo-luminescence (CL) spectroscopy, photocurrent method for carrier diffusion length determination, electro-luminescence microscopy (EL), deep level transient spectroscopy (DLTS), C-V profiling and Hall-effect measurements. When possible, the same investigation techniques were used in parallel with similar layers grown by chemical vapour deposition (CVD) epitaxy and the physical properties of the two kind of epitaxied layers were compared. p-i-n diodes were fabricated in parallel on SEV and CVD-grown layers and showed close electrical performances in dc mode in term of capacitance, resistance and transient time switching, despite the lower mobility and the diffusion length of the SEV-grown layers. X-band microwave switches based on the SEV-grown p-i-n diodes have been demonstrated with insertion loss lower than 4 dB and an isolation higher than 17 dB. These single-pole single-throw (SPST) switches were able to handle a pulsed power up to 1800 W in isolation mode, similar to the value obtained with switches incorporating diodes with CVD-grown layers.

Synthesis and luminescent properties of Tb3Al5O12:Ce3+ phosphors for warm white light emitting diodes

NASA Astrophysics Data System (ADS)

Meng, Qinghuan; Liu, Ying; Fu, Yujie; Zu, Yuangang; Zhou, Zhenbao

2018-01-01

A series of Tb3Al5O12:Ce3+ phosphors were successfully synthesized by a precipitation method. The pure Tb3Al5O12 phase was obtained in the synthesized Tb3Al5O12:Ce3+ phosphors after heat treatments at 500 °C in air for 3 h. The excitation spectra of Tb3Al5O12:Ce3+ phosphors include excitation bands corresponding to Tb3+ and Ce3+ ions. Under the excitation at 455 nm, Tb3Al5O12:Ce3+ phosphors show emission band at around 553 nm. The critical doping concentration of Ce3+ in Tb3Al5O12 is 6mol%, which shows the highest emission intensity. White light-emitting diodes were fabricated by combining InGaN-based blue light-emitting diodes with Tb3Al5O12:Ce3+ and Y3Al5O12:Ce3+ phosphors. The Tb3Al5O12:Ce3+ based white light-emitting diode shows a lower color temperature than that of Y3Al5O12:Ce3+ based white light-emitting diode. The experimental results clearly indicate that the prepared Tb3Al5O12:Ce3+ has potential applications in white light emitting diodes.

High speed visible light communication using blue GaN laser diodes

NASA Astrophysics Data System (ADS)

Watson, S.; Viola, S.; Giuliano, G.; Najda, S. P.; Perlin, P.; Suski, T.; Marona, L.; Leszczyński, M.; Wisniewski, P.; Czernecki, R.; Targowski, G.; Watson, M. A.; White, H.; Rowe, D.; Laycock, L.; Kelly, A. E.

2016-10-01

GaN-based laser diodes have been developed over the last 20 years making them desirable for many security and defence applications, in particular, free space laser communications. Unlike their LED counterparts, laser diodes are not limited by their carrier lifetime which makes them attractive for high speed communication, whether in free space, through fiber or underwater. Gigabit data transmission can be achieved in free space by modulating the visible light from the laser with a pseudo-random bit sequence (PRBS), with recent results approaching 5 Gbit/s error free data transmission. By exploiting the low-loss in the blue part of the spectrum through water, data transmission experiments have also been conducted to show rates of 2.5 Gbit/s underwater. Different water types have been tested to monitor the effect of scattering and to see how this affects the overall transmission rate and distance. This is of great interest for communication with unmanned underwater vehicles (UUV) as the current method using acoustics is much slower and vulnerable to interception. These types of laser diodes can typically reach 50-100 mW of power which increases the length at which the data can be transmitted. This distance could be further improved by making use of high power laser arrays. Highly uniform GaN substrates with low defectivity allow individually addressable laser bars to be fabricated. This could ultimately increase optical power levels to 4 W for a 20-emitter array. Overall, the development of GaN laser diodes will play an important part in free space optical communications and will be vital in the advancement of security and defence applications.

TCAD simulation for alpha-particle spectroscopy using SIC Schottky diode.

PubMed

Das, Achintya; Duttagupta, Siddhartha P

2015-12-01

There is a growing requirement of alpha spectroscopy in the fields context of environmental radioactive contamination, nuclear waste management, site decommissioning and decontamination. Although silicon-based alpha-particle detection technology is mature, high leakage current, low displacement threshold and radiation hardness limits the operation of the detector in harsh environments. Silicon carbide (SiC) is considered to be excellent material for radiation detection application due to its high band gap, high displacement threshold and high thermal conductivity. In this report, an alpha-particle-induced electron-hole pair generation model for a reverse-biased n-type SiC Schottky diode has been proposed and verified using technology computer aided design (TCAD) simulations. First, the forward-biased I-V characteristics were studied to determine the diode ideality factor and compared with published experimental data. The ideality factor was found to be in the range of 1.4-1.7 for a corresponding temperature range of 300-500 K. Next, the energy-dependent, alpha-particle-induced EHP generation model parameters were optimised using transport of ions in matter (TRIM) simulation. Finally, the transient pulses generated due to alpha-particle bombardment were analysed for (1) different diode temperatures (300-500 K), (2) different incident alpha-particle energies (1-5 MeV), (3) different reverse bias voltages of the 4H-SiC-based Schottky diode (-50 to -250 V) and (4) different angles of incidence of the alpha particle (0°-70°).The above model can be extended to other (wide band-gap semiconductor) device technologies useful for radiation-sensing application. © The Author 2015. Published by Oxford University Press. All rights reserved. For Permissions, please email: journals.permissions@oup.com.

Packaging of wavelength stabilized 976nm 100W 105µm 0.15 NA fiber coupled diode lasers

NASA Astrophysics Data System (ADS)

Jiang, Xiaochen; Liu, Rui; Gao, Yanyan; Zhang, Tujia; He, Xiaoguang; Zhu, Jing; Zhang, Qiang; Yang, Thomas; Zhang, Cuipeng

2016-03-01

Fiber coupled diode lasers are widely used in many fields now especially as pumps in fiber laser systems. In many fiber laser applications, high brightness pumps are essential to achieve high brightness fiber lasers. Furthermore, 976nm wavelength absorption band is narrow with Yb3+ doped fiber lasers which is more challenging for controlling wavelength stabilized in diode laser modules. This study designed and implemented commercial available high brightness and narrow wavelength width lasers to be able to use in previous mentioned applications. Base on multiple single emitters using spatial and polarization beam combining as well as fiber coupling techniques, we report a wavelength stabilized, 105μm NA 0.15 fiber coupled diode laser package with 100W of optical output power at 976 nm, which are 14 emitters inside each multiple single emitter module. The emitting aperture of the combined lasers output are designed and optimized for coupling light into a 105μm core NA 0.15 fiber. Volume Bragg grating technology has been used to improve spectral characteristics of high-power diode lasers. Mechanical modular design and thermal simulation are carried out to optimize the package. The spectral width is roughly 0.5 nm (FWHM) and the wavelength shift per °C < 0.02nm. The output spectrum is narrowed and wavelength is stabilized using Volume Bragg gratings (VBGs). The high brightness package has an electrical to optical efficiency better than 45% and power enclosure more than 90% within NA 0.12. Qualification tests have been included on this kind of package. Mechanical shock, vibration and accelerated aging tests show that the package is reliability and the MTTF is calculated to be more than 100k hours at 25°C.

Development of high-average-power DPSSL with high beam quality

NASA Astrophysics Data System (ADS)

Nakai, Sadao; Kanabe, Tadashi; Kawashima, Toshiyuki; Yamanaka, Masanobu; Izawa, Yasukazu; Nakatuka, Masahiro; Kandasamy, Ranganathan; Kan, Hirofumi; Hiruma, Teruo; Niino, Masayuki

2000-08-01

The recent progress of high power diode laser is opening new fields of laser and its application. We are developing high average power diode pumped solid state laser DPSSL for laser fusion power plant, for space propulsion and for various applications in industry. The common features or requirements of our High Average-power Laser for Nuclear-fusion Application (HALNA) are large pulse energy with relatively low repetition of few tens Hz, good beam quality of order of diffraction limit and high efficiency more than 10%. We constructed HALNA 10 (10J X 10 Hz) and tested the performance to clarify the scalability to higher power system. We have obtained in a preliminary experiment a 8.5 J output energy at 0.5 Hz with beam quality of 2 times diffraction limited far-field pattern.

Extracting random numbers from quantum tunnelling through a single diode.

PubMed

Bernardo-Gavito, Ramón; Bagci, Ibrahim Ethem; Roberts, Jonathan; Sexton, James; Astbury, Benjamin; Shokeir, Hamzah; McGrath, Thomas; Noori, Yasir J; Woodhead, Christopher S; Missous, Mohamed; Roedig, Utz; Young, Robert J

2017-12-19

Random number generation is crucial in many aspects of everyday life, as online security and privacy depend ultimately on the quality of random numbers. Many current implementations are based on pseudo-random number generators, but information security requires true random numbers for sensitive applications like key generation in banking, defence or even social media. True random number generators are systems whose outputs cannot be determined, even if their internal structure and response history are known. Sources of quantum noise are thus ideal for this application due to their intrinsic uncertainty. In this work, we propose using resonant tunnelling diodes as practical true random number generators based on a quantum mechanical effect. The output of the proposed devices can be directly used as a random stream of bits or can be further distilled using randomness extraction algorithms, depending on the application.

Diode Laser Assisted Excision and Low Level Laser Therapy in the Management of Mucus Extravasation Cysts: A Case Series

PubMed Central

Ahad, Abdul; Tandon, Shruti; Lamba, Arundeep Kaur; Faraz, Farrukh; Anand, Parimal; Aleem, Abdul

2017-01-01

Introduction: Mucus extravasation cyst is a commonly occurring lesion in oral cavity that may result from traumatic severance of a salivary gland duct with subsequent extravasation of mucus into fibrous connective tissue. After a conventional excision or marsupialization, recurrence is not uncommon. Diode laser offers an effective modality for management of such lesions. Case Reports: Four patients were referred with painless fluctuant swellings on labial and buccal mucosa. After recording history and clinical examination, provisional diagnosis of mucocele was made. All the lesions were excised with a diode laser and biopsy was performed. Surgical wounds were treated with low-level laser therapy (LLLT). Results: Uneventful healing was observed in all 4 cases. Significant reduction in postoperative discomfort was recorded after application of LLLT. Histopathological findings were suggestive of mucus extravasation cysts. Conclusion: Diode laser appears to be a good alternative to conventional modalities for the management of mucus extravasation cysts. PMID:29123637

Effects of deposition temperature on the electrical properties of Ti/SiC Schottky barrier diodes

NASA Astrophysics Data System (ADS)

Oder, Tom N.; Kundeti, Krishna C.; Borucki, Nicholas; Isukapati, Sundar B.

2017-12-01

Ti Schottky contacts were deposited on n-type 4H-SiC at different temperatures ranging from 28 oC to 900 oC using a magnetron sputtering deposition system to fabricate Schottky barrier diodes. Post deposition annealing at 500 oC for up to 60 hours in vacuum was carried to further improve the contact properties. Optimum barrier height of 1.13 eV and ideality factor of 1.04 was obtained in contacts deposited at 200 oC and annealed for 60 hours. Under a reverse voltage bias of 400 V, the average leakage current on these set of diodes was 6.6 x 10-8 A. Based on the x-ray diffraction analysis, TiC, Ti5Si3 and Ti3SiC2 were formed at the Ti/SiC interface. These results could be beneficial to improving the performance of 4H-SiC Schottky diodes for high power and high temperature applications.

Silicon carbide semiconductor device fabrication and characterization

NASA Technical Reports Server (NTRS)

Davis, R. F.; Das, K.

1990-01-01

A number of basic building blocks i.e., rectifying and ohmic contacts, implanted junctions, MOS capacitors, pnpn diodes and devices, such as, MESFETs on both alpha and beta SiC films were fabricated and characterized. Gold forms a rectifying contact on beta SiC. Since Au contacts degrade at high temperatures, these are not considered to be suitable for high temperature device applications. However, it was possible to utilize Au contact diodes for electrically characterizing SiC films. Preliminary work indicates that sputtered Pt or Pt/Si contacts on beta SiC films are someways superior to Au contacts. Sputtered Pt layers on alpha SiC films form excellent rectifying contacts, whereas Ni layers following anneal at approximately 1050 C provide an ohmic contact. It has demonstrated that ion implantation of Al in substrates held at 550 C can be successfully employed for the fabrication of rectifying junction diodes. Feasibility of fabricating pnpn diodes and platinum gated MESFETs on alpha SiC films was also demonstrated.

Diode Laser Assisted Excision and Low Level Laser Therapy in the Management of Mucus Extravasation Cysts: A Case Series.

PubMed

Ahad, Abdul; Tandon, Shruti; Lamba, Arundeep Kaur; Faraz, Farrukh; Anand, Parimal; Aleem, Abdul

2017-01-01

Introduction: Mucus extravasation cyst is a commonly occurring lesion in oral cavity that may result from traumatic severance of a salivary gland duct with subsequent extravasation of mucus into fibrous connective tissue. After a conventional excision or marsupialization, recurrence is not uncommon. Diode laser offers an effective modality for management of such lesions. Case Reports: Four patients were referred with painless fluctuant swellings on labial and buccal mucosa. After recording history and clinical examination, provisional diagnosis of mucocele was made. All the lesions were excised with a diode laser and biopsy was performed. Surgical wounds were treated with low-level laser therapy (LLLT). Results: Uneventful healing was observed in all 4 cases. Significant reduction in postoperative discomfort was recorded after application of LLLT. Histopathological findings were suggestive of mucus extravasation cysts. Conclusion: Diode laser appears to be a good alternative to conventional modalities for the management of mucus extravasation cysts.

Coexistence of diode-like volatile and multilevel nonvolatile resistive switching in a ZrO2/TiO2 stack structure.

PubMed

Li, Yingtao; Yuan, Peng; Fu, Liping; Li, Rongrong; Gao, Xiaoping; Tao, Chunlan

2015-10-02

Diode-like volatile resistive switching as well as nonvolatile resistive switching behaviors in a Cu/ZrO₂/TiO₂/Ti stack are investigated. Depending on the current compliance during the electroforming process, either volatile resistive switching or nonvolatile resistive switching is observed. With a lower current compliance (<10 μA), the Cu/ZrO₂/TiO₂/Ti device exhibits diode-like volatile resistive switching with a rectifying ratio over 10(6). The permanent transition from volatile to nonvolatile resistive switching can be obtained by applying a higher current compliance of 100 μA. Furthermore, by using different reset voltages, the Cu/ZrO₂/TiO₂/Ti device exhibits multilevel memory characteristics with high uniformity. The coexistence of nonvolatile multilevel memory and diode-like volatile resistive switching behaviors in the same Cu/ZrO₂/TiO₂/Ti device opens areas of applications in high-density storage, logic circuits, neural networks, and passive crossbar memory selectors.

Doping concentration effect on performance of single QW double-heterostructure InGaN/AlGaN light emitting diode

NASA Astrophysics Data System (ADS)

Halim, N. Syafira Abdul; Wahid, M. Halim A.; Hambali, N. Azura M. Ahmad; Rashid, Shanise; Shahimin, Mukhzeer M.

2017-11-01

Light emitting diode (LED) employed a numerous applications such as displaying information, communication, sensing, illumination and lighting. In this paper, InGaN/AlGaN based on one quantum well (1QW) light emitting diode (LED) is modeled and studied numerically by using COMSOL Multiphysics 5.1 version. We have selected In0.06Ga0.94N as the active layer with thickness 50nm sandwiched between 0.15μm thick layers of p and n-type Al0.15Ga0.85N of cladding layers. We investigated an effect of doping concentration on InGaN/AlGaN double heterostructure of light-emitting diode (LED). Thus, energy levels, carrier concentration, electron concentration and forward voltage (IV) are extracted from the simulation results. As the doping concentration is increasing, the performance of threshold voltage, Vth on one quantum well (1QW) is also increases from 2.8V to 3.1V.

Laser interaction with tissue

DOE Office of Scientific and Technical Information (OSTI.GOV)

Berns, M.W.

These proceedings collect papers on laser biomedicine. Topics include: light distributions on tissue; chemical byproducts of laser/tissue interactions; laser applications in ophthalmology; phododynamic therapy; diode pumped solid state lasers at two and three micrometers; and applications of excimer lasers to peripheral nerve repair.

Application of time-resolved shadowgraph imaging and computer analysis to study micrometer-scale response of superfluid helium

NASA Astrophysics Data System (ADS)

Sajjadi, Seyed; Buelna, Xavier; Eloranta, Jussi

2018-01-01

Application of inexpensive light emitting diodes as backlight sources for time-resolved shadowgraph imaging is demonstrated. The two light sources tested are able to produce light pulse sequences in the nanosecond and microsecond time regimes. After determining their time response characteristics, the diodes were applied to study the gas bubble formation around laser-heated copper nanoparticles in superfluid helium at 1.7 K and to determine the local cavitation bubble dynamics around fast moving metal micro-particles in the liquid. A convolutional neural network algorithm for analyzing the shadowgraph images by a computer is presented and the method is validated against the results from manual image analysis. The second application employed the red-green-blue light emitting diode source that produces light pulse sequences of the individual colors such that three separate shadowgraph frames can be recorded onto the color pixels of a charge-coupled device camera. Such an image sequence can be used to determine the moving object geometry, local velocity, and acceleration/deceleration. These data can be used to calculate, for example, the instantaneous Reynolds number for the liquid flow around the particle. Although specifically demonstrated for superfluid helium, the technique can be used to study the dynamic response of any medium that exhibits spatial variations in the index of refraction.

Microwave generation enhancement of X-band CRBWO by use of coaxial dual annular cathodes

NASA Astrophysics Data System (ADS)

Teng, Yan; Sun, Jun; Chen, Changhua; Shao, Hao

2013-07-01

This paper presents an approach that greatly enhances both the output power and the conversion efficiency of the coaxial relativistic backward wave oscillator (CRBWO) by using coaxial dual annular cathodes, which increases the diode current rather than the diode voltage. The reasons for the maladjustment of CRBWO under a high diode voltage are analyzed theoretically. It is found that by optimization of the diode structure, the shielding effect of the space charge of the outer beams on the inner cathode can be alleviated effectively and dual annular beams with the same kinetic energy can be explosively emitted in parallel. The coaxial reflector can enhance the conversion efficiency by improving the premodulation of the beams. The electron dump on the inner conductor ensures that the electron beams continue to provide kinetic energy to the microwave output until they vanish. Particle-in-cell (PIC) simulation results show that generation can be enhanced up to an output power level of 3.63 GW and conversion efficiency of 45% at 8.97 GHz under a diode voltage of 659 kV and current of 12.27 kA. The conversion efficiency remains above 40% and the output frequency variation is less than 100 MHz over a voltage range of more than 150 kV. Also, the application of the coaxial dual annular cathodes means that the diode impedance is matched to that of the transmission line of the accelerators. This impedance matching can effectively eliminate power reflection at the diode, and thus increase the energy efficiency of the entire system.

The effectiveness of low-level diode laser therapy on orthodontic pain management: a systematic review and meta-analysis.

PubMed

Ren, Chong; McGrath, Colman; Yang, Yanqi

2015-09-01

To assess the effectiveness of diode low-level laser therapy (LLLT) for orthodontic pain control, a systematic and extensive electronic search for randomised controlled trials (RCTs) investigating the effects of diode LLLT on orthodontic pain prior to November 2014 was performed using the Cochrane Library (Issue 9, 2014), PubMed (1997), EMBASE (1947) and Web of Science (1956). The Cochrane tool for risk of bias evaluation was used to assess the bias risk in the chosen data. A meta-analysis was conducted using RevMan 5.3. Of the 186 results, 14 RCTs, with a total of 659 participants from 11 countries, were included. Except for three studies assessed as having a 'moderate risk of bias', the RCTs were rated as having a 'high risk of bias'. The methodological weaknesses were mainly due to 'blinding' and 'allocation concealment'. The meta-analysis showed that diode LLLT significantly reduced orthodontic pain by 39 % in comparison with placebo groups (P = 0.02). Diode LLLT was shown to significantly reduce the maximum pain intensity among parallel-design studies (P = 0.003 versus placebo groups; P = 0.000 versus control groups). However, no significant effects were shown for split-mouth-design studies (P = 0.38 versus placebo groups). It was concluded that the use of diode LLLT for orthodontic pain appears promising. However, due to methodological weaknesses, there was insufficient evidence to support or refute LLLT's effectiveness. RCTs with better designs and appropriate sample power are required to provide stronger evidence for diode LLLT's clinical applications.

Comment on 'Power loss in open cavity diodes and a modified Child-Langmuir law' [Phys. Plasmas 12, 093102 (2005)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Swanekamp, S. B.; Ottinger, P. F.

In this Comment, it is shown that no modification of the Child-Langmuir law [Phys. Rev.32, 492 (1911); Phys. Rev. 2, 450 (1913)] is necessary to treat the space-charge-limited flow from a diode with an open boundary as reported in Phys. Plasmas 12, 093102 (2005). The open boundary condition in their simulations can be represented by a voltage source and a resistor whose value is the vacuum-wave impedance of the opening. The diode can be represented as a variable resistor whose value depends on the voltage drop across the diode (as measured by the line integral of E across the diodemore » gap). This is a simple voltage-divider circuit whose analysis shows that the real diode voltage drops as the vacuum-wave impedance increases. Furthermore, it is shown that in equilibrium, the voltage drop between the anode and cathode is independent of the path chosen for the line integral of the electric field so that E=-{nabla}{phi} is valid. In this case, the equations of electrostatics are applicable. This clearly demonstrates that the electric field is electrostatic and static fields DO NOT RADIATE. It is shown that the diode voltage drops as the vacuum wave impedance increases and the current drops according to the Child-Langmuir law. Therefore, the observed drop in circuit current can be explained by a real drop in voltage across the diode and not an effective drop as claimed by the authors.« less

Continued improvement in reduced-mode (REM) diodes enable 272 W from 105 μm 0.15 NA beam

NASA Astrophysics Data System (ADS)

Kanskar, M.; Bao, L.; Chen, Z.; Dawson, D.; DeVito, M.; Dong, W.; Grimshaw, M.; Guan, X.; Hemenway, M.; Martinsen, R.; Urbanek, W.; Zhang, S.

2017-02-01

High-power, high-brightness diode lasers from 8xx nm to 9xx nm have been pursued in many applications including fiber laser pumping, materials processing, solid-state laser pumping, and consumer electronics manufacturing. In particular, 915 nm - 976 nm diodes are of interest as diode pumps for the kilowatt CW fiber lasers. Thus, there have been many technical efforts on driving the diode lasers to have both high power and high brightness to achieve high-performance and reduced manufacturing costs. This paper presents our continued progress in the development of high brightness fiber-coupled product platform, elementTM. In the past decade, the amount of power coupled into a single 105 μm and 0.15 NA fiber has increased by over a factor of ten through improved diode laser brilliance and the development of techniques for efficiently coupling multiple emitters into a single fiber. In this paper, we demonstrate the further brightness improvement and power-scaling enabled by both the rise in chip brightness/power and the increase in number of chips coupled into a given numerical aperture. We report a new x-REM design with brightness as high as 4.3 W/mm-mrad at a BPP of 3 mm-mrad. We also report the record 272W from a 2×9 elementTM with 105 μm/0.15 NA beam using x-REM diodes and a new product introduction at 200W output power from 105 μm/0.15 NA beam at 915 nm.

Black Phosphorus-Zinc Oxide Nanomaterial Heterojunction for p-n Diode and Junction Field-Effect Transistor.

PubMed

Jeon, Pyo Jin; Lee, Young Tack; Lim, June Yeong; Kim, Jin Sung; Hwang, Do Kyung; Im, Seongil

2016-02-10

Black phosphorus (BP) nanosheet is two-dimensional (2D) semiconductor with distinct band gap and attracting recent attention from researches because it has some similarity to gapless 2D semiconductor graphene in the following two aspects: single element (P) for its composition and quite high mobilities depending on its fabrication conditions. Apart from several electronic applications reported with BP nanosheet, here we report for the first time BP nanosheet-ZnO nanowire 2D-1D heterojunction applications for p-n diodes and BP-gated junction field effect transistors (JFETs) with n-ZnO channel on glass. For these nanodevices, we take advantages of the mechanical flexibility of p-type conducting of BP and van der Waals junction interface between BP and ZnO. As a result, our BP-ZnO nanodimension p-n diode displays a high ON/OFF ratio of ∼10(4) in static rectification and shows kilohertz dynamic rectification as well while ZnO nanowire channel JFET operations are nicely demonstrated by BP gate switching in both electrostatics and kilohertz dynamics.

Indocyanine green-laser thermolysis of acne vulgaris

NASA Astrophysics Data System (ADS)

Genina, Elina A.; Bashkatov, Alexey N.; Simonenko, Georgy V.; Tuchin, Valery V.; Yaroslavsky, Ilya V.; Altshuler, Gregory B.

2005-08-01

The near-infrared (NIR) laser radiation due to its high penetration depth is widely used in phototherapy and photothermolysis. In application to skin appendages a high selectivity of laser treatment is needed to prevent light action on surrounding tissues. Indocyanine Green (ICG) dye may provide a high selectivity of treatment due to effective ICG uploading by a target and its narrow band of considerable absorption just at the wavelength of the NIR diode laser. The goal of this study is to demonstrate the efficacy of the NIR diode laser photothermolysis in combination with topical application of ICG suggested for treatment of acne vulgaris. Two volunteers with back-located acne were enrolled. Skin sites of subjects were stained by ICG and irradiated by NIR laser-diode light (803 or 809 nm). The individual acne lesions were photothermally treated at 18 W/cm2 (803 nm, 0.5 sec) without skin surface cooling or at 200 W/cm2 (809 nm, 0.5 sec) with cooling. The results of the observations during a month after the treatment have shown that ICG stained acne inflammatory elements were destructed for light exposures of 0.5 sec.

Carbon Nanotube Self-Gating Diode and Application in Integrated Circuits.

PubMed

Si, Jia; Liu, Lijun; Wang, Fanglin; Zhang, Zhiyong; Peng, Lian-Mao

2016-07-26

A nano self-gating diode (SGD) based on nanoscale semiconducting material is proposed, simulated, and realized on semiconducting carbon nanotubes (CNTs) through a doping-free fabrication process. The relationships between the performance and material/structural parameters of the SGD are explored through numerical simulation and verified by experiment results. Based on these results, performance optimization strategy is outlined, and high performance CNT SGDs are fabricated and demonstrated to surpass other published CNT diodes. In particular the CNT SGD exhibits high rectifier factor of up to 1.4 × 10(6) while retains large on-state current. Benefiting from high yield and stability, CNT SGDs are used for constructing logic and analog integrated circuits. Two kinds of basic digital gates (AND and OR) have been realized on chip through using CNT SGDs and on-chip Ti wire resistances, and a full wave rectifier circuit has been demonstrated through using two CNT SGDs. Although demonstrated here using CNT SGDs, this device structure may in principle be implemented using other semiconducting nanomaterials, to provide ideas and building blocks for electronic applications based on nanoscale materials.

Hydrothermal growth of n-ZnO films on a patterned p-GaN epilayer and its application in heterojunction light-emitting diodes

NASA Astrophysics Data System (ADS)

Ko, Rong-Ming; Wang, Shui-Jinn; Chen, Ching-Yi; Wu, Cheng-Han; Lin, Yan-Ru; Lo, Hsin-Ming

2017-04-01

The hydrothermal growth (HTG) of crystalline n-ZnO films on both the nonpatterned and patterned p-GaN epilayers with a honeycomb array of etched holes is demonstrated, and its application in n-ZnO/p-GaN heterojunction light-emitting diodes (HJ-LEDs) is reported. The results reveal that an HTG n-ZnO film on a patterned p-GaN layer exhibits a high-quality single crystal with FWHMs of 0.463 and 0.983° obtained from a ω-rocking curve and a ϕ-scan pattern, respectively, which are much better than those obtained on a nonpatterned p-GaN layer. In addition, the n-ZnO/patterned p-GaN HJ-LED exhibited a much better rectifying diode behavior owing to having a higher n-ZnO film crystallinity quality and an improved interface with the p-GaN layer. Strong violet and violet-blue lights emitted from the n-ZnO/patterned p-GaN HJ-LED at around 405, 412, and 430 nm were analyzed.

Simultaneous measurements of multiple parameters at elevated temperature using a frequency-division multiplexing scheme with tunable diode lasers.

PubMed

Cai, Tingdong; Gao, Guangzhen; Liu, Ying

2012-10-01

A multiplexed diode-laser sensor system based on second harmonic detection of wavelength modulation spectroscopy (WMS) is developed for application at elevated temperatures with two near-infrared diode lasers multiplexed using a frequency-division multiplexing scheme. One laser is tuned over a H(2)O line pair near 7079.176 and 7079.855 cm(-1), and another laser is tuned over a pair of CO(2) and CO lines near 6361.250 and 6361.344 cm(-1). Temperature and concentrations of H(2)O, CO(2), and CO could be measured simultaneously by this system. In order to remove the need for calibration and correct for transmission variation due to beam steering, mechanical misalignments, soot, and windows fouling, the WMS-1f normalized 2f method is used. Demonstration experiments are conducted in a heated static cell. The precision of temperature and the concentrations for H(2)O, CO(2), and CO are found to be 1.57%, 3.87%, 3.01%, and 3.58%, respectively. These results illustrate the potential of this sensor for applications at high temperatures.

Reduced Graphene Oxide/Single-Walled Carbon Nanotube Hybrid Film Using Various p-Type Dopants and Its Application to GaN-Based Light-Emitting Diodes.

PubMed

Lee, Byeong Ryong; Kim, Tae Geun

2016-06-01

This paper reports the electrical and optical properties of the reduced graphene oxide (RGO)/single-walled carbon nanotube (SWNT) films using various p-type dopants and its application to GaN-based light-emitting diodes. To enhance the current injection and spreading of the RGO/SWNT films on the light-emitting diodes (LEDs), we increased the work function (φ) of the films using chemical doping with AuCl3, poly(3,4-ethylenedioxythiophene) oxidized with poly(4-styrenesulfonate) ( PSS) and MoO3; thereby reduced the Schottky barrier height between the RGO/SWNT films and p-GaN. By comparison, LEDs fabricated with work-function-tuned RGO/SWNT film doped with MoO3 exhibited the decrease of the forward voltage from 5.3 V to 5.02 V at 20 mA and the increase of the output power up to 1.26 times. We also analyzed the current injection mechanism using ultraviolet photoelectron spectroscopy and X-ray photoelectron spectroscopy.

Heterogeneous Silicon III-V Mode-Locked Lasers

NASA Astrophysics Data System (ADS)

Davenport, Michael Loehrlein

Mode-locked lasers are useful for a variety of applications, such as sensing, telecommunication, and surgical instruments. This work focuses on integrated-circuit mode-locked lasers: those that combine multiple optical and electronic functions and are manufactured together on a single chip. While this allows production at high volume and lower cost, the true potential of integration is to open applications for mode-locked laser diodes where solid state lasers cannot fit, either due to size and power consumption constraints, or where small optical or electrical paths are needed for high bandwidth. Unfortunately, most high power and highly stable mode-locked laser diode demonstrations in scientific literature are based on the Fabry-Perot resonator design, with cleaved mirrors, and are unsuitable for use in integrated circuits because of the difficulty of producing integrated Fabry-Perot cavities. We use silicon photonics and heterogeneous integration with III-V gain material to produce the most powerful and lowest noise fully integrated mode-locked laser diode in the 20 GHz frequency range. If low noise and high peak power are required, it is arguably the best performing fully integrated mode-locked laser ever demonstrated. We present the design methodology and experimental pathway to realize a fully integrated mode-locked laser diode. The construction of the device, beginning with the selection of an integration platform, and proceeding through the fabrication process to final optimization, is presented in detail. The dependence of mode-locked laser performance on a wide variety of design parameters is presented. Applications for integrated circuit mode-locked lasers are also discussed, as well as proposed methods for using integration to improve mode-locking performance to beyond the current state of the art.

Disruptive laser diode source for embedded LIDAR sensors

NASA Astrophysics Data System (ADS)

Canal, Celine; Laugustin, Arnaud; Kohl, Andreas; Rabot, Olivier

2017-02-01

Active imaging based on laser illumination is used in various fields such as medicine, security, defense, civil engineering and in the automotive sector. In this last domain, research and development to bring autonomous vehicles on the roads has been intensified these last years with an emphasis on lidar technology that is probably the key to achieve full automation level. Based on time-of-flight measurements, the profile of objects can be measured together with their location in various conditions, creating a 3D mapping of the environment. To be embedded on a vehicle as advanced driver assistance systems (ADAS), these sensors require compactness, low-cost and reliability, as it is provided by a flash lidar. An attractive candidate, especially with respect to cost reduction, for the laser source integrated in these devices is certainly laser diodes as long as they can provide sufficiently short pulses with a high energy. A recent breakthrough in laser diode and diode driver technology made by Quantel (Les Ulis, France) now allows laser emission higher than 1 mJ with pulses as short as 12 ns in a footprint of 4x5 cm2 (including both the laser diode and driver) and an electrical-to-optical conversion efficiency of the whole laser diode source higher than 25% at this level of energy. The components used for the laser source presented here can all be manufactured at low cost. In particular, instead of having several individual laser diodes positioned side by side, the laser diodes are monolithically integrated on a single semiconductor chip. The chips are then integrated directly on the driver board in a single assembly step. These laser sources emit in the range of 800-1000 nm and their emission is considered to be eye safe when taking into account the high divergence of the output beam and the aperture of possible macro lenses so that they can be used for end consumer applications. Experimental characterization of these state-of-the-art pulsed laser diode sources will be given. Future work leads will be discussed for miniaturization of the laser diode and drastic cost reduction.

2-(4-Ethoxy phenyl)-4-phenyl quinoline organic phosphor for solution processed blue organic light-emitting diodes.

PubMed

Ghate, Minakshi; Kalyani, N Thejo; Dhoble, S J

2018-05-31

This paper reports the synthesis and characterization of 2-(4-ethoxyphenyl)-4-phenyl quinoline (OEt-DPQ) organic phosphor using an acid-catalyzed Friedlander reaction and the preparation of blended thin films by molecularly doping OEt-DPQ in poly(methyl methacrylate) (PMMA) at different wt%. The molecular structure of the synthesized phosphor was confirmed by Fourier transform infra-red (FTIR) spectroscopy and nuclear magnetic resonance spectra (NMR). Surface morphology and percent composition of the elements were assessed by scanning electron microscopy (SEM) and energy dispersive analysis of X-rays (EDAX). The thermal stability and melting point of OEt-DPQ and thin films were probed by thermo-gravimetric analysis (TGA)/differential thermal analysis (DTA) and were found to be 80°C and 113.6°C, respectively. UV-visible optical absorption spectra of OEt-DPQ in the solid state and blended films produced absorption bands in the range 260-340 nm, while photoluminescence (PL) spectra of OEt-DPQ in the solid state and blended thin films demonstrated blue emission that was registered at 432 nm when excited at 363-369 nm. However, solvated OEt-DPQ in chloroform, tetrahydrofuran or dichloromethane showed a blue shift of 31-43 nm. Optical absorption and emission parameters such as molar extinction coefficient (ε), energy gap (E g ), transmittance (T), reflectance (R), refractive index (n), oscillator energy (E 0 ) and oscillator strength (f), quantum yield (φ f ), oscillator energy (E 0 ), dispersion energy (E d ), Commission Internationale de l'Éclairage (CIE) co-ordinates and energy yield fluorescence (E F ) were calculated to assess the phosphor's suitability as a blue emissive material for opto-electronic applications such as organic light-emitting diodes (OLEDs), flexible displays and solid-state lighting technology. Copyright © 2018 John Wiley & Sons, Ltd.

Blue laser diode (LD) and light emitting diode (LED) applications

NASA Astrophysics Data System (ADS)

Bergh, Arpad A.

2004-09-01

The family of blue LEDs, edge emitting and surface emitting lasers, enable a number of applications. Blue lasers are used in digital applications such as optical storage in high density DVDs. The resolution of the spot size and hence the storage density is diffraction limited and is inversely proportional to the square of the wavelength of the laser. Other applications include printing, optical scanners, and high-resolution photo-lithography.As light emitters, blue LEDs are used for signaling and in direct view large area emissive displays. They are also making inroads into signage and LCD back-lighting, mobile platforms, and decorative accent lighting in curtains, furniture, etc.Blue LEDs produce white light either with phosphor wavelength converters or in combination with red and green LEDs. The full potential of LED light sources will require three devices to enable complete control over color and intensity.Sensing and medical/bio applications have a major impact on home security, on monitoring the environment, and on health care. New emerging diagnostic and therapeutic applications will improve the quality and reduce the cost of health care.

Top-emitting organic light-emitting diodes.

PubMed

Hofmann, Simone; Thomschke, Michael; Lüssem, Björn; Leo, Karl

2011-11-07

We review top-emitting organic light-emitting diodes (OLEDs), which are beneficial for lighting and display applications, where non-transparent substrates are used. The optical effects of the microcavity structure as well as the loss mechanisms are discussed. Outcoupling techniques and the work on white top-emitting OLEDs are summarized. We discuss the power dissipation spectra for a monochrome and a white top-emitting OLED and give quantitative reports on the loss channels. Furthermore, the development of inverted top-emitting OLEDs is described.

Ultra-short pulse generator

DOEpatents

McEwan, T.E.

1993-12-28

An inexpensive pulse generating circuit is disclosed that generates ultra-short, 200 picosecond, and high voltage 100 kW, pulses suitable for wideband radar and other wideband applications. The circuit implements a nonlinear transmission line with series inductors and variable capacitors coupled to ground made from reverse biased diodes to sharpen and increase the amplitude of a high-voltage power MOSFET driver input pulse until it causes non-destructive transit time breakdown in a final avalanche shock wave diode, which increases and sharpens the pulse even more. 5 figures.

Integrated flexible handheld probe for imaging and evaluation of iridocorneal angle

NASA Astrophysics Data System (ADS)

Shinoj, Vengalathunadakal K.; Murukeshan, Vadakke Matham; Baskaran, Mani; Aung, Tin

2015-01-01

An imaging probe is designed and developed by integrating a miniaturized charge-coupled diode camera and light-emitting diode light source, which enables evaluation of the iridocorneal region inside the eye. The efficiency of the prototype probe instrument is illustrated initially by using not only eye models, but also samples such as pig eye. The proposed methodology and developed scheme are expected to find potential application in iridocorneal angle documentation, glaucoma diagnosis, and follow-up management procedures.

Single mode, short cavity, Pb-salt diode lasers operating in the 5, 10, and 30-microns spectral regions

NASA Technical Reports Server (NTRS)

Linden, K. J.

1985-01-01

Pb-salt diode lasers are being used as frequency-tunable infrared sources in high resolution spectroscopy and heterodyne detection applications. Recent advances in short cavity, stripe-geometry laser configurations have led to significant increases in maximum CW operating temperature, single mode operation, and increased single mode tuning range. This paper describes short cavity, stripe geometry lasers operating in the 5, 10, and 30-microns spectral regions, with single mode tuning ranges of over 6/cm.

Program For A Pushbutton Display

NASA Technical Reports Server (NTRS)

Busquets, Anthony M.; Luck, William S., Jr.

1989-01-01

Programmable Display Pushbutton (PDP) is pushbutton device available from Micro Switch having programmable 16X35 matrix of light-emitting diodes on pushbutton surface. Any desired legends display on PDP's, producing user-friendly applications reducing need for dedicated manual controls. Interacts with operator, calls for correct response before transmitting next message. Both simple manual control and sophisticated programmable link between operator and host system. Programmable Display Pushbutton Legend Editor (PDPE) computer program used to create light-emitting-diode (LED) displays for pushbuttons. Written in FORTRAN.

Broadband External-Cavity Diode Laser

NASA Technical Reports Server (NTRS)

Pilgrim, Jeffrey S.

2005-01-01

A broadband external-cavity diode laser (ECDL) has been invented for use in spectroscopic surveys preparatory to optical detection of gases. Heretofore, commercially available ECDLs have been designed, in conjunction with sophisticated tuning assemblies, for narrow- band (and, typically, single-frequency) operation, as needed for high sensitivity and high spectral resolution in some gas-detection applications. However, for preparatory spectroscopic surveys, high sensitivity and narrow-band operation are not needed; in such cases, the present broadband ECDL offers a simpler, less-expensive, more-compact alternative to a commercial narrowband ECDL.

Resonant-tunnelling diode oscillator using a slot-coupled quasioptical open resonator

NASA Technical Reports Server (NTRS)

Stephan, K. D.; Brown, E. R.; Parker, C. D.; Goodhue, W. D.; Chen, C. L.

1991-01-01

A resonant-tunneling diode has oscillated at X-band frequencies in a microwave circuit consisting of a slot antenna coupled to a semiconfocal open resonator. Coupling between the open resonator and the slot oscillator improves the noise-to-carrier ratio by about 36 dB relative to that of the slot oscillator alone in the 100-200 kHz range. A circuit operating near 10 GHz has been designed as a scale model for millimeter- and submillimeter-wave applications.

Ultra-short pulse generator

DOEpatents

McEwan, Thomas E.

1993-01-01

An inexpensive pulse generating circuit is disclosed that generates ultra-short, 200 picosecond, and high voltage 100 kW, pulses suitable for wideband radar and other wideband applications. The circuit implements a nonlinear transmission line with series inductors and variable capacitors coupled to ground made from reverse biased diodes to sharpen and increase the amplitude of a high-voltage power MOSFET driver input pulse until it causes non-destructive transit time breakdown in a final avalanche shockwave diode, which increases and sharpens the pulse even more.

Efficient yellow-green light generation at 561 nm by frequency-doubling of a QD-FBG laser diode in a PPLN waveguide.

PubMed

Fedorova, Ksenia A; Sokolovskii, Grigorii S; Khomylev, Maksim; Livshits, Daniil A; Rafailov, Edik U

2014-12-01

A compact high-power yellow-green continuous wave (CW) laser source based on second-harmonic generation (SHG) in a 5% MgO doped periodically poled congruent lithium niobate (PPLN) waveguide crystal pumped by a quantum-dot fiber Bragg grating (QD-FBG) laser diode is demonstrated. A frequency-doubled power of 90.11 mW at the wavelength of 560.68 nm with a conversion efficiency of 52.4% is reported. To the best of our knowledge, this represents the highest output power and conversion efficiency achieved to date in this spectral region from a diode-pumped PPLN waveguide crystal, which could prove extremely valuable for the deployment of such a source in a wide range of biomedical applications.

Characterization of quantum well laser diodes for application within the AMRDEC HWIL facilities

NASA Astrophysics Data System (ADS)

Saylor, Daniel A.; Bender, Matt; Cantey, Thomas M.; Beasley, D. B.; Buford, Jim A.

2004-08-01

The U.S. Army's Research, Development, and Engineering Command's (RDECOM) Aviation and Missile Research, Development, and Engineering Center (AMRDEC) provides Hardware-in-the-Loop (HWIL) test support to numerous tactical and theatre missile programs. Critical to the successful execution of these tests is the state-of-the-art technologies employed in the visible and infrared scene projector systems. This paper describes the results of characterizations tests performed on new mid-wave infrared (MWIR) quantum well laser diodes recently provided to AMRDEC by the Naval Research Labs and Sarnoff Industries. These lasers provide a +10X imrovement in MWIR output over the previous technology of lead-salt laser diodes. Performance data on output power, linearity, and solid-angle coverage are presented. A discussion of the laser packages is also provided.

Optimized Biasing of Pump Laser Diodes in a Highly Reliable Metrology Source for Long-Duration Space Missions

NASA Technical Reports Server (NTRS)

Poberezhskiy, Ilya; Chang, Daniel; Erlig, Hernan

2011-01-01

Non Planar Ring Oscillator (NPRO) lasers are highly attractive for metrology applications. NPRO reliability for prolonged space missions is limited by reliability of 808 nm pump diodes. Combined laser farm aging parameter allows comparing different bias approaches. Monte-Carlo software developed to calculate the reliability of laser pump architecture, perform parameter sensitivity studies To meet stringent Space Interferometry Mission (SIM) Lite lifetime reliability / output power requirements, we developed a single-mode Laser Pump Module architecture that: (1) provides 2 W of power at 808 nm with >99.7% reliability for 5.5 years (2) consists of 37 de-rated diode lasers operating at -5C, with outputs combined in a very low loss 37x1 all-fiber coupler

Tunable terahertz wave generation through a bimodal laser diode and plasmonic photomixer.

PubMed

Yang, S-H; Watts, R; Li, X; Wang, N; Cojocaru, V; O'Gorman, J; Barry, L P; Jarrahi, M

2015-11-30

We demonstrate a compact, robust, and stable terahertz source based on a novel two section digital distributed feedback laser diode and plasmonic photomixer. Terahertz wave generation is achieved through difference frequency generation by pumping the plasmonic photomixer with two output optical beams of the two section digital distributed feedback laser diode. The laser is designed to offer an adjustable terahertz frequency difference between the emitted wavelengths by varying the applied currents to the laser sections. The plasmonic photomixer is comprised of an ultrafast photoconductor with plasmonic contact electrodes integrated with a logarithmic spiral antenna. We demonstrate terahertz wave generation with 0.15-3 THz frequency tunability, 2 MHz linewidth, and less than 5 MHz frequency stability over 1 minute, at useful power levels for practical imaging and sensing applications.

Improvement of electroluminescence performance by integration of ZnO nanowires and single-crystalline films on ZnO/GaN heterojunction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shi, Zhifeng; Zhang, Yuantao, E-mail: zhangyt@jlu.edu.cn; Cui, Xijun

2014-03-31

Heterojunction light-emitting diodes based on n-ZnO nanowires/ZnO single-crystalline films/p-GaN structure have been demonstrated for an improved electroluminescence performance. A highly efficient ultraviolet emission was observed under forward bias. Compared with conventional n-ZnO/p-GaN structure, high internal quantum efficiency and light extraction efficiency were simultaneously considered in the proposed diode. In addition, the diode can work continuously for ∼10 h with only a slight degradation in harsh environments, indicating its good reliability and application prospect in the future. This route opens possibilities for the development of advanced nanoscale devices in which the advantages of ZnO single-crystalline films and nanostructures can be integrated together.

Ultrasensitive dual-beam absorption and gain spectroscopy: applications for near-infrared and visible diode laser sensors

NASA Astrophysics Data System (ADS)

Allen, Mark G.; Carleton, Karen L.; Davis, Steven J.; Kessler, William J.; Otis, Charles E.; Palombo, Daniel A.; Sonnenfroh, David M.

1995-06-01

A dual-beam detection strategy with automatic balancing is described for ultrasensitive spectroscopy. Absorbances of 2 \\times 10-7 Hz-1/2 in free-space configurations and 5 \\times 10-6 Hz -1/2 in fiber-coupled configurations are demonstrated. With the dual-beam technique, atmospherically broadened absorption transitions may be resolved with InGaAsP, AlGaAs, and AlGaInP single-longitudinal-mode diode lasers. Applications to trace measurements of NO2 , O2, and H2O are described by the use of simple, inexpensive laser and detector systems. Small signal gain measurements on optically pumped I2 with a sensitivity of 10-5 are also reported.

Simple process of hybrid white quantum dot/organic light-emitting diodes by using quantum dot plate and fluorescence

NASA Astrophysics Data System (ADS)

Lee, Ho Won; Lee, Ki-Heon; Lee, Jae Woo; Kim, Jong-Hoon; Yang, Heesun; Kim, Young Kwan

2015-02-01

In this work, the simple process of hybrid quantum dot (QD)/organic light-emitting diode (OLED) was proposed to apply a white illumination light by using QD plate and organic fluorescence. Conventional blue fluorescent OLEDs were firstly fabricated and then QD plates of various concentrations, which can be controlled of UV-vis absorption and photoluminescence spectrum, were attached under glass substrate of completed blue devices. The suggested process indicates that we could fabricate the white device through very simple process without any deposition of orange or red organic emitters. Therefore, this work would be demonstrated that the potential simple process for white applications can be applied and also can be extended to additional research on light applications.

Metal organic vapour-phase epitaxy growth of GaN wires on Si (111) for light-emitting diode applications

PubMed Central

2013-01-01

GaN wires are grown on a Si (111) substrate by metal organic vapour-phase epitaxy on a thin deposited AlN blanket and through a thin SiNx layer formed spontaneously at the AlN/Si interface. N-doped wires are used as templates for the growth of core-shell InGaN/GaN multiple quantum wells coated by a p-doped shell. Standing single-wire heterostructures are connected using a metallic tip and a Si substrate backside contact, and the electroluminescence at room temperature and forward bias is demonstrated at 420 nm. This result points out the feasibility of lower cost nitride-based wires for light-emitting diode applications. PMID:23391377

Single-photon emitting diode in silicon carbide.

PubMed

Lohrmann, A; Iwamoto, N; Bodrog, Z; Castelletto, S; Ohshima, T; Karle, T J; Gali, A; Prawer, S; McCallum, J C; Johnson, B C

2015-07-23

Electrically driven single-photon emitting devices have immediate applications in quantum cryptography, quantum computation and single-photon metrology. Mature device fabrication protocols and the recent observations of single defect systems with quantum functionalities make silicon carbide an ideal material to build such devices. Here, we demonstrate the fabrication of bright single-photon emitting diodes. The electrically driven emitters display fully polarized output, superior photon statistics (with a count rate of >300 kHz) and stability in both continuous and pulsed modes, all at room temperature. The atomic origin of the single-photon source is proposed. These results provide a foundation for the large scale integration of single-photon sources into a broad range of applications, such as quantum cryptography or linear optics quantum computing.

Qualification and Testing of Quantum Cascade Lasers for Harsh Environments

NASA Astrophysics Data System (ADS)

Brauer, C. S.; Myers, T. L.; Cannon, B. D.; Anderson, C. G.; Crowther, B. G.; Hansen, S.

2014-12-01

Quantum cascade lasers (QCLs) offer the potential for the development of novel, laser-based instruments for both terrestrial and space applications. In order to withstand harsh conditions encountered in these environments, lasers must be robust, and rigorous testing is required before new systems can be utilized. A particular concern for space applications is the potential damage to laser performance caused by radiation exposure. While the effects of radiation exposure in diode lasers have been studied extensively, the effect on QCLs, which are fundamentally different from diode lasers, is not well known. We thus present work to quantify the performance of QCLs after exposure to moderate and high levels of radiation from different sources, including protons and gamma rays, to determine the effects of radiation damage.

Fabrication, characterization and applications of flexible vertical InGaN micro-light emitting diode arrays.

PubMed

Tian, Pengfei; McKendry, Jonathan J D; Gu, Erdan; Chen, Zhizhong; Sun, Yongjian; Zhang, Guoyi; Dawson, Martin D; Liu, Ran

2016-01-11

Flexible vertical InGaN micro-light emitting diode (micro-LED) arrays have been fabricated and characterized for potential applications in flexible micro-displays and visible light communication. The LED epitaxial layers were transferred from initial sapphire substrates to flexible AuSn substrates by metal bonding and laser lift off techniques. The current versus voltage characteristics of flexible micro-LEDs degraded after bending the devices, but the electroluminescence spectra show little shift even under a very small bending radius 3 mm. The high thermal conductivity of flexible metal substrates enables high thermal saturation current density and high light output power of the flexible micro-LEDs, benefiting the potential applications in flexible high-brightness micro-displays and high-speed visible light communication. We have achieved ~40 MHz modulation bandwidth and 120 Mbit/s data transmission speed for a typical flexible micro-LED.

[Pilot study on the use of diode laser therapy for treatment of dermatitis in koi carp (Cyprinus carpio)].

PubMed

Pees, Michael; Schmidt, V; Pees, K

2011-01-01

Therapy of dermatitis in koi using a diode laser technique. A diode laser with a wavelength of 980 nm and an energy density of 9 J/cm(2) was used to treat defined skin alterations in ten koi carp. The clinical situation after repeated laser application was recorded. In addition, the diode laser was used for surgical removal of proliferative skin alterations caused by Dermocystidium sp. in two koi ponds. An improvement of the clinical situation following laser therapy was seen in nine of the ten koi carp. Complete healing of the wound area occurred in four carp. A pronounced healing process was observed in four patients and a low healing tendency in one fish. Healing of the skin lesions following removal of the alterations caused by Dermocystidium sp. was unproblematic in one pond, whereas in the other collection a repeated treatment was necessary due to relapse of the alterations. Diode laser therapy for treatment of dermatitis in koi is a promising technique. An expedited wound healing process was seen in wound areas that were present for long periods and resistant to previous therapy attempts, including antibiotics. Wound healing was undisturbed following surgical use of the laser technique for the removal of skin proliferations. Therefore, the diode laser technique can be recommended for the treatment of dermatitis in koi, especially in cases of unsuccessful treatment using anti-infective drugs, and for the treatment of Dermocystidium infections.

Laser Application in Dentistry: Irradiation Effects of Nd:YAG 1064 nm and Diode 810 nm and 980 nm in Infected Root Canals-A Literature Overview.

PubMed

Saydjari, Yves; Kuypers, Thorsten; Gutknecht, Norbert

2016-01-01

Objective. In endodontics, Nd:YAG laser (1064 nm) and diode laser (810 nm and 980 nm) devices are used to remove bacteria in infected teeth. A literature review was elaborated to compare and evaluate the advantages and disadvantages of using these lasers. Methods. Using combined search terms, eligible articles were retrieved from PubMed and printed journals. The initial search yielded 40 titles and 27 articles were assigned to full-text analysis. The studies were classified based upon laser source, laser energy level, duration/similarity of application, and initial and final bacterial count at a minimum of 20 prepared root canals. Part of the analysis was only reduced microorganisms and mechanically treated root canals upon preparation size of ISO 30. All studies were compared to evaluate the most favorable laser device for best results in endodontic therapy. Results. A total of 22 eligible studies were found regarding Nd:YAG laser 1064 nm. Four studies fulfilled all demanded criteria. Seven studies referring to the diode laser 980 nm were examined, although only one fulfilled all criteria. Eleven studies were found regarding the diode laser 810 nm, although only one study fulfilled all necessary criteria. Conclusions. Laser therapy is effective in endodontics, although a comparison of efficiency between the laser devices is not possible at present due to different study designs, materials, and equipment.

Pulsed corona generation using a diode-based pulsed power generator

NASA Astrophysics Data System (ADS)

Pemen, A. J. M.; Grekhov, I. V.; van Heesch, E. J. M.; Yan, K.; Nair, S. A.; Korotkov, S. V.

2003-10-01

Pulsed plasma techniques serve a wide range of unconventional processes, such as gas and water processing, hydrogen production, and nanotechnology. Extending research on promising applications, such as pulsed corona processing, depends to a great extent on the availability of reliable, efficient and repetitive high-voltage pulsed power technology. Heavy-duty opening switches are the most critical components in high-voltage pulsed power systems with inductive energy storage. At the Ioffe Institute, an unconventional switching mechanism has been found, based on the fast recovery process in a diode. This article discusses the application of such a "drift-step-recovery-diode" for pulsed corona plasma generation. The principle of the diode-based nanosecond high-voltage generator will be discussed. The generator will be coupled to a corona reactor via a transmission-line transformer. The advantages of this concept, such as easy voltage transformation, load matching, switch protection and easy coupling with a dc bias voltage, will be discussed. The developed circuit is tested at both a resistive load and various corona reactors. Methods to optimize the energy transfer to a corona reactor have been evaluated. The impedance matching between the pulse generator and corona reactor can be significantly improved by using a dc bias voltage. At good matching, the corona energy increases and less energy reflects back to the generator. Matching can also be slightly improved by increasing the temperature in the corona reactor. More effective is to reduce the reactor pressure.

Hybrid integration of laser source on silicon photonic integrated circuit for low-cost interferometry medical device

NASA Astrophysics Data System (ADS)

Duperron, Matthieu; Carroll, Lee; Rensing, Marc; Collins, Sean; Zhao, Yan; Li, Yanlu; Baets, Roel; O'Brien, Peter

2017-02-01

The cost-effective integration of laser sources on Silicon Photonic Integrated Circuits (Si-PICs) is a key challenge to realizing the full potential of on-chip photonic solutions for telecommunication and medical applications. Hybrid integration can offer a route to high-yield solutions, using only known-good laser-chips, and simple freespace micro-optics to transport light from a discrete laser-diode to a grating-coupler on the Si-PIC. In this work, we describe a passively assembled micro-optical bench (MOB) for the hybrid integration of a 1550nm 20MHz linewidth laser-diode on a Si-PIC, developed for an on-chip interferometer based medical device. A dual-lens MOB design minimizes aberrations in the laser spot transported to the standard grating-coupler (15 μm x 12 μm) on the Si-PIC, and facilitates the inclusion of a sub-millimeter latched-garnet optical-isolator. The 20dB suppression from the isolator helps ensure the high-frequency stability of the laser-diode, while the high thermal conductivity of the AlN submount (300/W=m.°C), and the close integration of a micro-bead thermistor, ensure the stable and efficient thermo-electric cooling of the laser-diode, which helps minimise low-frequency drift during the approximately 15s of operation needed for the point-of-care measurement. The dual-lens MOB is compatible with cost-effective passively-aligned mass-production, and can be optimised for alternative PIC-based applications.

Rectifying magnetic tunnel diode like behavior in Co2MnSi/ZnO/p-Si heterostructure

NASA Astrophysics Data System (ADS)

Maji, Nilay; Nath, T. K.

2018-04-01

The rectifying magnetic tunnel diode like behavior has been observed in Co2MnSi/ZnO/p-Si heterostructure. At first an ultra thin layer of ZnO has been deposited on p-Si (100) substrate with the help of pulsed laser deposition (PLD). After that a highly spin-polarized Heusler alloy Co2MnSi (CMS) film (250 nm) has been grown on ZnO/p-Si using electron beam physical vapor deposition technique. The phase purity of the sample has been confirmed through high resolution X-Ray diffraction technique. The electrical transport properties have been investigated at various isothermal conditions in the temperature range of 77-300 K. The current-voltage characteristics exhibit an excellent rectifying tunnel diode like behavior throughout the temperature regime. The current (I) across the junction has been found to decrease with the application of an external magnetic field parallel to the plane of the CMS film clearly indicating positive junction magnetoresistance (JMR) of the heterostructure. The magnetic field dependent JMR behavior of our heterostructure has been investigated in the same temperature range. Our heterostructure clearly demonstrates a giant positive JMR at 78 K (˜264%) and it starts decreasing with increasing temperature. If we compare our results with earlier reported results on other heterostructures, it can be seen that the JMR value for our heterojunction saturates at a much lower external magnetic field, thus creating it a better alternative for spin tunnel diodes in upcoming spintronics device applications.

Laser Application in Dentistry: Irradiation Effects of Nd:YAG 1064 nm and Diode 810 nm and 980 nm in Infected Root Canals—A Literature Overview

PubMed Central

Kuypers, Thorsten; Gutknecht, Norbert

2016-01-01

Objective. In endodontics, Nd:YAG laser (1064 nm) and diode laser (810 nm and 980 nm) devices are used to remove bacteria in infected teeth. A literature review was elaborated to compare and evaluate the advantages and disadvantages of using these lasers. Methods. Using combined search terms, eligible articles were retrieved from PubMed and printed journals. The initial search yielded 40 titles and 27 articles were assigned to full-text analysis. The studies were classified based upon laser source, laser energy level, duration/similarity of application, and initial and final bacterial count at a minimum of 20 prepared root canals. Part of the analysis was only reduced microorganisms and mechanically treated root canals upon preparation size of ISO 30. All studies were compared to evaluate the most favorable laser device for best results in endodontic therapy. Results. A total of 22 eligible studies were found regarding Nd:YAG laser 1064 nm. Four studies fulfilled all demanded criteria. Seven studies referring to the diode laser 980 nm were examined, although only one fulfilled all criteria. Eleven studies were found regarding the diode laser 810 nm, although only one study fulfilled all necessary criteria. Conclusions. Laser therapy is effective in endodontics, although a comparison of efficiency between the laser devices is not possible at present due to different study designs, materials, and equipment. PMID:27462611

In Vitro Comparison of the Effects of Diode Laser and CO2 Laser on Topical Fluoride Uptake in Primary Teeth

PubMed Central

Bahrololoomi, Zahra; Sorouri, Milad

2015-01-01

Objectives: Fluoride therapy is important for control and prevention of dental caries. Laser irradiation can increase fluoride uptake especially when combined with topical fluoride application. The objective of this study was to compare the effects of CO2 and diode lasers on enamel fluoride uptake in primary teeth. Materials and Methods: Forty human primary molars were randomly assigned to four groups (n=10). The roots were removed and the crowns were sectioned mesiodistally into buccal and lingual halves as the experimental and control groups. All samples were treated with 5% sodium fluoride (NaF) varnish. The experimental samples in the four groups were irradiated with 5 or 7W diode or 1 or 2W CO2 laser for 15 seconds and were compared with the controls in terms of fluoride uptake, which was determined using an ion selective electrode after acid dissolution of the specimens. Data were analyzed by SPSS version 16 using ANOVA treating the control measurements as covariates. Results: The estimated amount of fluoride uptake was 59.5± 16.31 ppm, 66.5± 14.9 ppm, 78.6± 12.43 ppm and 90.4± 11.51 ppm for 5W and 7 W diode and 1W and 2 W CO2 lasers, respectively, which were significantly greater than the values in the conventional topical fluoridation group (P<0.005). There were no significant differences between 7W diode laser and 1W CO2 laser, 5W and 7W diode laser, or 1W and 2W CO2 laser in this regard. Conclusion: The results showed that enamel surface irradiation by CO2 and diode lasers increases the fluoride uptake. PMID:27123018

In Vitro Comparison of the Effects of Diode Laser and CO2 Laser on Topical Fluoride Uptake in Primary Teeth.

PubMed

Bahrololoomi, Zahra; Fotuhi Ardakani, Faezeh; Sorouri, Milad

2015-08-01

Fluoride therapy is important for control and prevention of dental caries. Laser irradiation can increase fluoride uptake especially when combined with topical fluoride application. The objective of this study was to compare the effects of CO2 and diode lasers on enamel fluoride uptake in primary teeth. Forty human primary molars were randomly assigned to four groups (n=10). The roots were removed and the crowns were sectioned mesiodistally into buccal and lingual halves as the experimental and control groups. All samples were treated with 5% sodium fluoride (NaF) varnish. The experimental samples in the four groups were irradiated with 5 or 7W diode or 1 or 2W CO2 laser for 15 seconds and were compared with the controls in terms of fluoride uptake, which was determined using an ion selective electrode after acid dissolution of the specimens. Data were analyzed by SPSS version 16 using ANOVA treating the control measurements as covariates. The estimated amount of fluoride uptake was 59.5± 16.31 ppm, 66.5± 14.9 ppm, 78.6± 12.43 ppm and 90.4± 11.51 ppm for 5W and 7 W diode and 1W and 2 W CO2 lasers, respectively, which were significantly greater than the values in the conventional topical fluoridation group (P<0.005). There were no significant differences between 7W diode laser and 1W CO2 laser, 5W and 7W diode laser, or 1W and 2W CO2 laser in this regard. The results showed that enamel surface irradiation by CO2 and diode lasers increases the fluoride uptake.

Ferroelectric Diodes with Charge Injection and Trapping

NASA Astrophysics Data System (ADS)

Fan, Zhen; Fan, Hua; Lu, Zengxing; Li, Peilian; Huang, Zhifeng; Tian, Guo; Yang, Lin; Yao, Junxiang; Chen, Chao; Chen, Deyang; Yan, Zhibo; Lu, Xubing; Gao, Xingsen; Liu, Jun-Ming

2017-01-01

Ferroelectric diodes with polarization-modulated Schottky barriers are promising for applications in resistive switching (RS) memories. However, they have not achieved satisfactory performance reliability as originally hoped. The physical origins underlying this issue have not been well studied, although they deserve much attention. Here, by means of scanning Kelvin probe microscopy we show that the electrical poling of ferroelectric diodes can cause significant charge injection and trapping besides polarization switching. We further show that the reproducibility and stability of switchable diode-type RS behavior are significantly affected by the interfacial traps. A theoretical model is then proposed to quantitatively describe the modifications of Schottky barriers by charge injection and trapping. This model is able to reproduce various types of hysteretic current-voltage characteristics as experimentally observed. It is further revealed that the charge injection and trapping can significantly modify the electroresistance ratio, RS polarity, and high- or low-resistance states initially defined by the polarization direction. Several approaches are suggested to suppress the effect of charge injection and trapping so as to realize high-performance polarization-reversal-induced RS. This study, therefore, reveals the microscopic mechanisms for the RS behavior comodulated by polarization reversal and charge trapping in ferroelectric diodes, and also provides useful suggestions for developing reliable ferroelectric RS memories.

Dual-functional on-chip AlGaAs/GaAs Schottky diode for RF power detection and low-power rectenna applications.

PubMed

Hashim, Abdul Manaf; Mustafa, Farahiyah; Rahman, Shaharin Fadzli Abd; Rahman, Abdul Rahim Abdul

2011-01-01

A Schottky diode has been designed and fabricated on an n-AlGaAs/GaAs high-electron-mobility-transistor (HEMT) structure. Current-voltage (I-V) measurements show good device rectification, with a Schottky barrier height of 0.4349 eV for Ni/Au metallization. The differences between the Schottky barrier height and the theoretical value (1.443 eV) are due to the fabrication process and smaller contact area. The RF signals up to 1 GHz are rectified well by the fabricated Schottky diode and a stable DC output voltage is obtained. The increment ratio of output voltage vs input power is 0.2 V/dBm for all tested frequencies, which is considered good enough for RF power detection. Power conversion efficiency up to 50% is obtained at frequency of 1 GHz and input power of 20 dBm with series connection between diode and load, which also shows the device's good potential as a rectenna device with further improvement. The fabricated n-AlGaAs/GaAs Schottky diode thus provides a conduit for breakthrough designs for RF power detectors, as well as ultra-low power on-chip rectenna device technology to be integrated in nanosystems.

Effect of diode laser and ultrasonics with and without ethylenediaminetetraacetic acid on smear layer removal from the root canals: A scanning electron microscope study.

PubMed

Amin, Khalid; Masoodi, Ajaz; Nabi, Shahnaz; Ahmad, Parvaiz; Farooq, Riyaz; Purra, Aamir Rashid; Ahangar, Fayaz Ahmad

2016-01-01

To evaluate the effect of diode laser and ultrasonics with and without ethylenediaminetetraacetic acid (EDTA) on the smear layer removal from root canals. A total of 120 mandibular premolars were decoronated to working the length of 12 mm and prepared with protaper rotary files up to size F3. Group A canals irrigated with 1 ml of 3% sodium hypochlorite (NaOCl) followed by 3 ml of 3% NaOCl. Group B canals irrigated with 1 ml of 17% EDTA followed by 3 ml of 3% NaOCl. Group C canals lased with a diode laser. Group D canals were initially irrigated with 0.8 ml of 17% EDTA the remaining 0.2 ml was used to fill the root canals, and diode laser application was done. Group E canals were irrigated with 1 ml distilled water with passive ultrasonic activation, followed by 3 ml of 3% NaOCl. Group F canals were irrigated with 1 ml EDTA with passive ultrasonic activation, followed by 3 ml of 3% NaOCl. Scanning electron microscope examination of canals was done for remaining smear layer at coronal middle and apical third levels. Ultrasonics with EDTA had the least smear layer scores. Diode laser alone performed significantly better than ultrasonics.

Dual-Functional On-Chip AlGaAs/GaAs Schottky Diode for RF Power Detection and Low-Power Rectenna Applications

PubMed Central

Hashim, Abdul Manaf; Mustafa, Farahiyah; Rahman, Shaharin Fadzli Abd; Rahman, Abdul Rahim Abdul

2011-01-01

A Schottky diode has been designed and fabricated on an n-AlGaAs/GaAs high-electron-mobility-transistor (HEMT) structure. Current-voltage (I–V) measurements show good device rectification, with a Schottky barrier height of 0.4349 eV for Ni/Au metallization. The differences between the Schottky barrier height and the theoretical value (1.443 eV) are due to the fabrication process and smaller contact area. The RF signals up to 1 GHz are rectified well by the fabricated Schottky diode and a stable DC output voltage is obtained. The increment ratio of output voltage vs input power is 0.2 V/dBm for all tested frequencies, which is considered good enough for RF power detection. Power conversion efficiency up to 50% is obtained at frequency of 1 GHz and input power of 20 dBm with series connection between diode and load, which also shows the device’s good potential as a rectenna device with further improvement. The fabricated n-AlGaAs/GaAs Schottky diode thus provides a conduit for breakthrough designs for RF power detectors, as well as ultra-low power on-chip rectenna device technology to be integrated in nanosystems. PMID:22164066

Modeling and characterization of field-enhanced corona discharge in ozone-generator diode

NASA Astrophysics Data System (ADS)

Patil, Jagadish G.; Vijayan, T.

2010-02-01

Electric field enhanced corona plasma discharge in ozone generator diode of axial symmetry has been investigated and characterized in theory. The cathode K of diode is made of a large number of sharpened nozzles arranged on various radial planes on the axial mast and pervaded in oxygen gas inside the anode cup A, produces high fields over MV/m and aids in the formation of a corona plume of dense ozone cloud over the cathode surface. An r-z finite difference scheme has been devised and employed to numerically determine the potential and electric field distributions inside the diode. The analyses of cathode emissions revealed a field emission domain conformed to modified Child-Langmuir diode-current. Passage of higher currents (over μA) in shorter A-K gaps d gave rise to cathode heated plasma extending from the corona to Saha regimes depending on local temperature. Plasma densities of order 102-106 m-3 are predicted in these. For larger d however, currents are smaller and heating negligible and a negative corona favoring ozone formation is attained. High ozone yields about 20 per cent of oxygen input is predicted in this domain. The generator so developed will be applied to various important applications such as, purification of ambient air /drinking water, ozone therapy, and so on.

High-power diode laser versus electrocautery surgery on human papillomavirus lesion treatment.

PubMed

Baeder, Fernando Martins; Santos, Maria Teresa Botti R; Pelino, Jose Eduardo Pelizon; Duarte, Danilo Antonio; Genovese, Walter Joao

2012-05-01

The use of high-power lasers has facilitated and improved human papillomavirus (HPV) treatment protocols and has also become very popular in recent years. This application has been more frequently used in hospitals, especially in gynecology. The present study aimed to evaluate the effects of high-power diode laser to remove oral lesions caused by HPV and the consequent effects on virus load following the wound tissue healing process compared with one of the most conventional surgical techniques involving electrocautery. Surgeries were performed on 5 patients who had 2 distinct lesions caused by HPV. All patients were submitted to both electrocautery and high-power diode laser. Following a 20-day period, when the area was healed, sample material was collected through curettage for virus load quantitative analysis.Observation verified the presence of virus in all the samples; however, surgeries performed with the laser also revealed a significant reduction in virus load per cell compared with those performed with electrocautery. The ease when handling the diode laser, because of the flexibility of its fibers and precision of its energy delivery system, provides high-accuracy surgery, which facilitates the treatment of large and/or multifocal lesions. The use of high-power diode laser is more effective in treatment protocols of lesions caused by HPV.

Modeling the effect of heatsink performance in high-peak-power laser-diode-bar pump sources for solid-state lasers 011 011

DOE Office of Scientific and Technical Information (OSTI.GOV)

Honea, E.C., LLNL

We derive approximate expressions for transient output power and wavelength chirp of high- peak-power laser-diode bars assuming one-dimensional heat flow and linear temperature dependences for chirp and efficiency. The model is derived for pulse durations, 10 < {tau} < 1000 ps, typically used for diode-pumped solid-state lasers and is in good agreement with experimental data for Si heatsink mounted 940 nm laser-diode bars operating at 100 W/cm. The analytic expressions are more flexible and easily used than the results of operating point dependent numerical modeling. In addition, the analytic expressions used here can be integrated to describe the energy permore » unit wavelength for a given pulse duration, initial emission bandwidth and heatsink material. We find that the figure-of-merit for a heatsink material in this application is ({rho}C{sub p}K) where {rho}C{sub p} is the volumetric heat capacity and K is the thermal conductivity. As an example of the utility of the derived expressions, we determine an effective absorption coefficient as a function of pump pulse duration for a diode-pumped solid-state laser utilizing Yb:Sr{sub 5}(PO{sub 4}){sub 3}F (Yb:S-FAP) as the gain medium.« less

2.1 μm high-power laser diode beam combining(Conference Presentation)

NASA Astrophysics Data System (ADS)

Berrou, Antoine P. C.; Elder, Ian F.; Lamb, Robert A.; Esser, M. J. Daniel

2016-10-01

Laser power and brightness scaling, in "eye safe" atmospheric transmission windows, is driving laser system research and development. High power lasers with good beam quality, at wavelength around 2.1 µm, are necessary for optical countermeasure applications. For such applications, focusing on efficiency and compactness of the system is mandatory. In order to cope with these requirements, one must consider the use of laser diodes which emit directly in the desired spectral region. The challenge for these diodes is to maintain a good beam quality factor as the output power increases. 2 µm diodes with excellent beam quality in both axes are available with output powers of 100 mW. Therefore, in order to reach multi-watt of average output power, broad-area single emitters and beam combining becomes relevant. Different solutions have been implemented in the 1.9 to 2 µm wavelength range, one of which is to stack multiple emitter bars reaching more than one hundred watt, while another is a fibre coupled diode module. The beam propagation factor of these systems is too high for long atmospheric propagation applications. Here we describe preliminary results on non-coherent beam combining of 2.1 µm high power Fabry-Perot GaSb laser diodes supplied by Brolis Semiconductors Ltd. First we evaluated single mode diodes (143 mW) with good beam quality (M2 < 1.5 for slow axis and < 1.1 for fast axis). Then we characterized broad-area single emitter diodes (808 mW) with an electrical-to-optical efficiency of 19 %. The emitter width was 90 µm with a cavity length of 1.5 mm. In our experiments we found that the slow axis multimode output beam consisted of two symmetric lobes with a total full width at half maximum (FWHM) divergence angle of 25 degrees, corresponding to a calculated beam quality factor of M2 = 25. The fast axis divergence was specified to be 44 degrees, with an expected beam quality factor close to the diffraction limit, which informed our selection of collimation lenses used in the experiment. We evaluated two broadband (1.8 - 3 µm) AR coated Geltech aspheric lenses with focal lengths of 1.87 mm and 4 mm, with numerical apertures of 0.85 and 0.56, respectively, as an initial collimation lens, followed by an additional cylindrical lens of focal length 100 mm for fully collimating the slow axis. Using D-shaped gold-coated mirrors, multiple single emitter beams are stacked in the fast axis direction with the objective that the combined beam has a beam propagation factor in the stacking direction close to the beam propagation factor of the slow axis of a single emitter, e.g. M2 of 20 to 25 in both axes. We further found that the output beam of a single emitter is highly linearly polarized along the slow axis, making it feasible to implement polarization beam combining techniques to increase the beam power by a factor two while maintaining the same beam quality. Along with full beam characterization, a power scaling strategy towards a multi-watt output power beam combining laser system will be presented.

Amplify Interest in STS.

ERIC Educational Resources Information Center

Chiappetta, Eugene L; Mays, John D.

1992-01-01

Presents activities in which students construct simple crystal radio sets and amplifiers out of diodes, transistors, and integrated circuits. Provides conceptual background, materials needed, instructions, diagrams, and classroom applications. (MDH)

Tunable diode lasers application for fully automated absolute measurements of CO and CO2 concentrations in human breath

NASA Astrophysics Data System (ADS)

Moskalenko, Konstantin L.; Sobolev, Nikolai V.; Adamovskay, Inna A.; Stepanov, Eugene V.; Nadezhdinskii, Alexander I.; McKenna-Lawlor, Susan

1994-01-01

Measurements of carbon monoxide and carbon dioxide concentrations by registration of high resolution absorption spectra are described. A fully automated diode laser system developed to simultaneously measure CO and CO2, with sensitivity for CO up to 50 ppb and CO2 up to 0.1 vol%, is described. Calculation of CO and CO2 concentrations was carried out on the base of a priori date on strength and broadening coefficients of detected absorption lines. Test procedures of such diode laser systems are described. Possible reasons affected on accuracy and reliability of obtained data (e.g., the value of diode lasers spontaneous radiation, the stability of CO content in a cell, etc.) for absolute and relative calibration procedure are discussed. The physiological level of CO concentration in the breath of non smokers and smokers under different ambient conditions of CO concentrations in the atmosphere (in Moscow and in Maynooth) are compared. Recent results on statistical studies of the behavior of CO concentrations as a function of breath holding time are represented.

Visible-to-visible four-photon ultrahigh resolution microscopic imaging with 730-nm diode laser excited nanocrystals.

PubMed

Wang, Baoju; Zhan, Qiuqiang; Zhao, Yuxiang; Wu, Ruitao; Liu, Jing; He, Sailing

2016-01-25

Further development of multiphoton microscopic imaging is confronted with a number of limitations, including high-cost, high complexity and relatively low spatial resolution due to the long excitation wavelength. To overcome these problems, for the first time, we propose visible-to-visible four-photon ultrahigh resolution microscopic imaging by using a common cost-effective 730-nm laser diode to excite the prepared Nd(3+)-sensitized upconversion nanoparticles (Nd(3+)-UCNPs). An ordinary multiphoton scanning microscope system was built using a visible CW diode laser and the lateral imaging resolution as high as 161-nm was achieved via the four-photon upconversion process. The demonstrated large saturation excitation power for Nd(3+)-UCNPs would be more practical and facilitate the four-photon imaging in the application. A sample with fine structure was imaged to demonstrate the advantages of visible-to-visible four-photon ultrahigh resolution microscopic imaging with 730-nm diode laser excited nanocrystals. Combining the uniqueness of UCNPs, the proposed visible-to-visible four-photon imaging would be highly promising and attractive in the field of multiphoton imaging.

Solid state neutron dosimeter for space applications

NASA Technical Reports Server (NTRS)

Entine, Gerald; Nagargar, Vivek; Sharif, Daud

1990-01-01

Personnel engaged in space flight are exposed to significant flux of high energy neutrons arising from both primary and secondary sources of ionizing radiation. Presently, there exist no compact neutron sensor capable of being integrated in a flight instrument to provide real time measurement of this radiation flux. A proposal was made to construct such an instrument using special PIN silicon diode which has the property of being insensitive to the other forms of ionizing radiation. Studies were performed to determine the design and construction of a better reading system to allow the PIN diode to be read with high precision. The physics of the device was studied, especially with respect to those factors which affect the sensitivity and reproducibility of the neutron response. This information was then used to develop methods to achieve high sensitivity at low neutron doses. The feasibility was shown of enhancing the PIN diode sensitivity to make possible the measurement of the low doses of neutrons encountered in space flights. The new PIN diode will make possible the development of a very compact, accurate, personal neutron dosimeter.

Efficient generation of 509 nm light by sum-frequency mixing between two tapered diode lasers

NASA Astrophysics Data System (ADS)

Tawfieq, Mahmoud; Jensen, Ole Bjarlin; Hansen, Anders Kragh; Sumpf, Bernd; Paschke, Katrin; Andersen, Peter E.

2015-03-01

We demonstrate a concept for visible laser sources based on sum-frequency generation of beam combined tapered diode lasers. In this specific case, a 1.7 W sum-frequency generated green laser at 509 nm is obtained, by frequency adding of 6.17 W from a 978 nm tapered diode laser with 8.06 W from a 1063 nm tapered diode laser, inside a periodically poled MgO doped lithium niobate crystal. This corresponds to an optical to optical conversion efficiency of 12.1%. As an example of potential applications, the generated nearly diffraction-limited green light is used for pumping a Ti:sapphire laser, thus demonstrating good beam quality and power stability. The maximum output powers achieved when pumping the Ti:sapphire laser are 226 mW (CW) and 185 mW (mode-locked) at 1.7 W green pump power. The optical spectrum emitted by the mode-locked Ti:sapphire laser shows a spectral width of about 54 nm (FWHM), indicating less than 20 fs pulse width.

How to realize a spin-dependent Seebeck diode effect in metallic zigzag γ-graphyne nanoribbons?

PubMed

Wu, Dan-Dan; Liu, Qing-Bo; Fu, Hua-Hua; Wu, Ruqian

2017-11-30

The spin-dependent Seebeck effect (SDSE) is one of the core topics of spin caloritronics. In the traditional device designs of spin-dependent Seebeck rectifiers and diodes, finite spin-dependent band gaps of materials are required to realize the on-off characteristic in thermal spin currents, and nearly zero charge current should be achieved to reduce energy dissipation. Here, we propose that two ferromagnetic zigzag γ-graphyne nanoribbons (ZγGNRs) without any spin-dependent band gaps around the Fermi level can not only exhibit the SDSE, but also display rectifier and diode effects in thermal spin currents characterized by threshold temperatures, which originates from the compensation effect occurring in spin-dependent transmissions but not from the spin-splitting band gaps in materials. The metallic characteristics of ZγGNRs bring about an advantage that the gate voltage is an effective route to adjust the symmetry of spin-splitting bands to obtain pure thermal spin currents. The results provide a new mechanism to realize spin-Seebeck rectifier and diode effects in 2D materials and expand material candidates towards spin-Seebeck device applications.

Laser diode stack beam shaping for efficient and compact long-range laser illuminator design

NASA Astrophysics Data System (ADS)

Lutz, Y.; Poyet, J. M.

2014-04-01

Laser diode stacks are interesting laser sources for active imaging illuminators. They allow the accumulation of large amounts of energy in multi-pulse mode, which is best suited for long-range image recording. Even when the laser diode stacks are equipped with fast-axis collimation (FAC) and slow-axis collimation (SAC) micro-lenses, their beam parameter products BPP are not compatible with direct use in highly efficient and compact illuminators. This is particularly true when narrow divergences are required such as for long-range applications. A solution to overcome these difficulties is to enhance the poor slow-axis BPP by virtually restacking the laser diode stack. We present a beam shaping and homogenization method that is low-cost and efficient and has low alignment sensitivity. After conducting simulations, we have realized and characterized the illuminator. A compact long-range laser illuminator has been set up with a divergence of 3.5×2.6 mrad and a global efficiency of 81%. Here, a projection lens with a clear aperture of 62 mm and a focal length of 571 mm was used.

Characterization of WB/SiC Schottky Barrier Diodes Using I-V-T Method

NASA Astrophysics Data System (ADS)

Aldridge, James; Oder, Tom

2009-04-01

The importance of silicon carbide (SiC) semiconductor for high temperature and high power microelectronic device applications has long been established. We have fabricated SiC Schottky barrier diodes using tungsten boride (WB) as the Schottky contact. The diodes were characterized using the current-voltage-temperature method. The sample was mounted on a heated stage and the temperature varied from about 25 ^oC to 300 ^oC at intervals of 25 ^oC. From the Richardson's plot, we obtained an energy barrier height of 0.96 eV and a Richardson's constant of 71.2 AK-1cm-2. Using the modified Richardson's plot, we obtained a barrier height of 1.01 eV. From the variation of the ideality factor and the temperature, we determined a characteristic energy of 0.02 eV to 0.04 eV across the range of the measurement temperature. This implies that thermionic emission is dominant in the low measurement temperature range. Our results confirm the excellent thermal stability of WB/SiC Schottky barrier diodes.

Diode laser spectroscopy: precise spectral line shape measurements

NASA Astrophysics Data System (ADS)

Nadezhdinskii, A. I.

1996-07-01

When one speaks about modern trends in tunable diode laser spectroscopy (TDLS) one should mention that precise line shape measurements have become one of the most promising applications of diode lasers in high resolution molecular spectroscopy. Accuracy limitations of TDL spectrometers are considered in this paper, proving the ability to measure spectral line profile with precision better than 1%. A four parameter Voigt profile is used to fit the experimental spectrum, and the possibility of line shift measurements with an accuracy of 2 × 10 -5 cm -1 is shown. Test experiments demonstrate the error line intensity ratios to be less than 0.3% for the proposed approach. Differences between "soft" and "hard" models of line shape have been observed experimentally for the first time. Some observed resonance effects are considered with respect to collision adiabacity.

Unidirectional oxide hetero-interface thin-film diode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Park, Youngmin; Lee, Eungkyu; Lee, Jinwon

2015-10-05

The unidirectional thin-film diode based on oxide hetero-interface, which is well compatible with conventional thin-film fabrication process, is presented. With the metal anode/electron-transporting oxide (ETO)/electron-injecting oxide (EIO)/metal cathode structure, it exhibits that electrical currents ohmically flow at the ETO/EIO hetero-interfaces for only positive voltages showing current density (J)-rectifying ratio of ∼10{sup 5} at 5 V. The electrical properties (ex, current levels, and working device yields) of the thin-film diode (TFD) are systematically controlled by changing oxide layer thickness. Moreover, we show that the oxide hetero-interface TFD clearly rectifies an AC input within frequency (f) range of 10{sup 2} Hz < f < 10{sup 6} Hz, providing amore » high feasibility for practical applications.« less

Label-free optical-resolution photoacoustic microscopy of superficial microvasculature using a compact visible laser diode excitation

PubMed Central

Zeng, Lvming; Piao, Zhonglie; Huang, Shenghai; Jia, Wangcun; Chen, Zhongping

2015-01-01

We have developed laser-diode-based optical-resolution photoacoustic microscopy (LD-OR-PAM) of superficial microvasculature which has the desirable properties of being compact, low-cost, and label-free. A 300-mW visible pulsed laser diode was operated at a 405 ± 5 nm wavelength with a pulse energy as low as 52 nJ. By using a 3.6 MHz ultrasound transducer, the system was tested on carbon fibers with a lateral resolution of 0.95 µm and an SNR of 38 dB. The subcutaneous microvasculature on a mouse back was imaged without an exogenous contrast agent which demonstrates the potential of the proposed prototype for skin chromophores. Our eventual goal is to offer a practical and affordable multi-wavelength functional LD-OR-PAM instrument suitable for clinical applications. PMID:26698732

Gap Excitations and Series Loads in Microstrip Lines: Equivalent Network Characterization with Application to THz Circuits

NASA Technical Reports Server (NTRS)

Neto, Andrea; Siegel, Peter H.

2001-01-01

At submillimeter wavelengths typical gap discontinuities in microstrip, CPW lines or at antenna terminals, which might contain diodes or active elements, cannot be viewed as simple quasi statically evaluated lumped elements. Planar Schottky diodes at 2.5 THz, for example, have a footprint that is comparable to a wavelength. Thus, apart from modelling the diodes themselves, the connection with their exciting elements (antennas or microstrip) gives rise to parasitics. Full wave or strictly numeric approaches can be used to account for these parasitics but at the expense of generality of the solution and the CPU time of the calculation. In this paper an equivalent network is derived that accurately accounts for large gap discontinuities (with respect to a wavelength) without suffering from the limitations of available numeric techniques.

Construction of a fast, inexpensive rapid-scanning diode-array detector and spectrometer.

PubMed

Carter, T P; Baek, H K; Bonninghausen, L; Morris, R J; van Wart, H E

1990-10-01

A 512-element diode-array spectroscopic detection system capable of acquiring multiple spectra at a rate of 5 ms per spectrum with an effective scan rate of 102.9 kHz has been constructed. Spectra with fewer diode elements can also be acquired at scan rates up to 128 kHz. The detector utilizes a Hamamatsu silicon photodiode-array sensor that is interfaced to Hamamatsu driver/amplifier and clock generator boards and a DRA laboratories 12-bit 160-kHz analog-to-digital converter. These are standard, commercially available devices which cost approximately $3500. The system is interfaced to and controlled by an IBM XT microcomputer. Detailed descriptions of the home-built detector housing and control/interface circuitry are presented and its application to the study of the reaction of horseradish peroxidase with hydrogen peroxide is demonstrated.

Ga2O3 Schottky barrier and heterojunction diodes for power electronics applications

NASA Astrophysics Data System (ADS)

Tadjer, Marko J.; Mahadik, Nadeemullah A.; Freitas, Jaime A.; Glaser, Evan R.; Koehler, Andrew D.; Luna, Lunet E.; Feigelson, Boris N.; Hobart, Karl D.; Kub, Fritz J.; Kuramata, A.

2018-02-01

We present novel approaches for the development of Ga2O3 Schottky barrier and heterojunction diodes. Samples of β- Ga2O3 were first annealed in N2 and O2 to demonstrate the effect of annealing on the carrier concentration. Cathodoluminescence and electron spin resonance measurements were also performed. Schottky barrier diodes on asgrown and O2-annealed epitaxial Ga2O3 films were fabricated and breakdown voltages were compared. Lower reverse current and a breakdown voltage of about 857 V were measured on the O2-annealed device. Finally, we report preliminary results from the development of anisotype heterojunctions between n-type Ga2O3 with a sputtered NiO layer. Rectifying current-voltage characteristics were obtained when the NiO was deposited both at room temperature and at 450 °C.

Study of the collector/heat pipe cooled externally configured thermionic diode

NASA Technical Reports Server (NTRS)

1973-01-01

A collector/heat pipe cooled, externally configured (heated) thermionic diode module was designed for use in a laboratory test to demonstrate the applicability of this concept as the fuel element/converter module of an in-core thermionic electric power source. During the course of the program, this module evolved from a simple experimental mock-up into an advanced unit which was more reactor prototypical. Detailed analysis of all diode components led to their engineering design, fabrication, and assembly, with the exception of the collector/heat pipe. While several designs of high power annular wicked heat pipes were fabricated and tested, each exhibited unexpected performance difficulties. It was concluded that the basic cause of these problems was the formation of crud which interfered with the liquid flow in the annular passage of the evaporator region.

Current transport across the pentacene/CVD-grown graphene interface for diode applications.

PubMed

Berke, K; Tongay, S; McCarthy, M A; Rinzler, A G; Appleton, B R; Hebard, A F

2012-06-27

We investigate the electronic transport properties across the pentacene/graphene interface. Current transport across the pentacene/graphene interface is found to be strikingly different from transport across pentacene/HOPG and pentacene/Cu interfaces. At low voltages, diodes using graphene as a bottom electrode display Poole–Frenkel emission, while diodes with HOPG and Cu electrodes are dominated by thermionic emission. At high voltages conduction is dominated by Poole–Frenkel emission for all three junctions. We propose that current across these interfaces can be accurately modeled by a combination of thermionic and Poole–Frenkel emission. Results presented not only suggest that graphene provides low resistive contacts to pentacene where a flat-laying orientation of pentacene and transparent metal electrodes are desired but also provides further understanding of the physics at the organic semiconductor/graphene interface.

LASER APPLICATIONS AND OTHER TOPICS IN QUANTUM ELECTRONICS: Frequency modulation upon nonstationary heating of the p - n junction in high-sensitive diode laser spectroscopy

NASA Astrophysics Data System (ADS)

Andreev, Sergei N.; Nikolaev, I. V.; Ochkin, Vladimir N.; Savinov, Sergei Yu; Spiridonov, Maksim V.; Tskhai, Sergei N.

2007-04-01

A special type of modulation of the injection current of a diode laser is proposed at which the frequency modulation of radiation is not accompanied by the residual amplitude modulation. This method considerably reduces the influence of the diode laser radiation instability on the recorded absorption spectra. This allows a prolonged monitoring of small amounts of impurities in gas analysis by retaining a high sensitivity. Prolonged measurements of absorption spectra are performed at a relative absorption of 8×10-7. By using a 50-cm multipass cell with the optical length of 90 m, the absorption coefficient of 1.2×10-10 cm-1 was detected. As an example, the day evolution of the background concentrations of NO2 molecules was measured in the atmosphere.

III-nitride nanowire LEDs and diode lasers: monolithic light sources on (001) Si emitting in the 600-1300nm range

NASA Astrophysics Data System (ADS)

Bhattacharya, P.; Hazari, A.; Jahangir, S.

2018-02-01

GaN-based nanowire heterostructure arrays epitaxially grown on (001)Si substrates have unique properties and present the potential to realize useful devices. The active light-emitting region in the nanowire heterostructures are usually InGaN disks, whose composition can be varied to tune the emission wavelength. We have demonstrated light emitting diodes and edgeemitting diode lasers with power outputs 10mW with emission in the 600-1300nm wavelength range. These light sources are therefore useful for a variety of applications, including silicon photonics. Molecular beam epitaxial growth of the nanowire heterostructure arrays on (001)Si substrates and the characteristics of 1.3μm nanowire array edge emitting lasers, guided wave photodiodes and a monolithic photonic integrated circuit designed for 1.3μm operation are described.

Excitonic processes at organic heterojunctions

NASA Astrophysics Data System (ADS)

He, ShouJie; Lu, ZhengHong

2018-02-01

Understanding excitonic processes at organic heterojunctions is crucial for development of organic semiconductor devices. This article reviews recent research on excitonic physics that involve intermolecular charge transfer (CT) excitons, and progress on understanding relationships between various interface energy levels and key parameters governing various competing interface excitonic processes. These interface excitonic processes include radiative exciplex emission, nonradiative recombination, Auger electron emission, and CT exciton dissociation. This article also reviews various device applications involving interface CT excitons, such as organic light-emitting diodes (OLEDs), organic photovoltaic cells, organic rectifying diodes, and ultralow-voltage Auger OLEDs.

Optical communication for space missions

NASA Technical Reports Server (NTRS)

Firtmaurice, M.

1991-01-01

Activities performed at NASA/GSFC (Goddard Space Flight Center) related to direct detection optical communications for space applications are discussed. The following subject areas are covered: (1) requirements for optical communication systems (data rates and channel quality; spatial acquisition; fine tracking and pointing; and transmit point-ahead correction); (2) component testing and development (laser diodes performance characterization and life testing; and laser diode power combining); (3) system development and simulations (The GSFC pointing, acquisition and tracking system; hardware description; preliminary performance analysis; and high data rate transmitter/receiver systems); and (4) proposed flight demonstration of optical communications.

Red laser-diode pumped 806 nm Tm3+: ZBLAN fibre laser

NASA Astrophysics Data System (ADS)

Juárez-Hernández, M.; Mejía, E. B.

2017-06-01

A Tm3+-doped fluorozirconate (ZBLAN) fibre laser operating CW at 806 nm when diode-pumped at 687 nm is described for the first time. This device is based on the 3F4  →  3H6 transition, and is suitable for first telecom window and sensing applications. A slope efficiency of 50.3% and low threshold pump-power of 11.6 mW were obtained. Maximum output power of 15 mW for 40 mW coupled pump was achieved.

UV diode-pumped solid state laser for medical applications

NASA Astrophysics Data System (ADS)

Apollonov, Victor V.; Konstantinov, K. V.; Sirotkin, A. A.

1999-07-01

A compact, solid-state, high-efficiency, and safe UV laser medical system with optical fiber output was created for treatment of destructive forms of pulmonary tuberculosis. A frequency-quadruped quasi-CW Nd:YVO4 laser system pumped by laser-diode array is investigated with various resonator configurations. A longitudinal end-pumping scheme was used in a compact acousto-optical Q-switched laser for producing stable pulses of UV radiation at the repetition frequency 10-20 kHz and the duration 7-10 ns with the fiber-guide output power exceeding 10 mW.

Accuracy Improvement for Light-Emitting-Diode-Based Colorimeter by Iterative Algorithm

NASA Astrophysics Data System (ADS)

Yang, Pao-Keng

2011-09-01

We present a simple algorithm, combining an interpolating method with an iterative calculation, to enhance the resolution of spectral reflectance by removing the spectral broadening effect due to the finite bandwidth of the light-emitting diode (LED) from it. The proposed algorithm can be used to improve the accuracy of a reflective colorimeter using multicolor LEDs as probing light sources and is also applicable to the case when the probing LEDs have different bandwidths in different spectral ranges, to which the powerful deconvolution method cannot be applied.

Monolithic control components for high power mm-waves

NASA Astrophysics Data System (ADS)

Armstrong, A.; Goodrich, J.; Moroney, W.; Wheeler, D.

1985-09-01

Monolithic PIN diode arrays are shown to provide significant advances in switching ratios, bandwidth, and high-power capability for millimeter control applications The PIN diodes are arranged in a series/parallel configuration and form an electronically controlled window for switching RF power by applying DC voltage. At Ka band, an SPST switch using the window array (WINAR) design typically has 0.6 dB insertion loss and 22 dB isolation over the 26.5 to 40.0 GHz band. The switch has over 500 W peak power and 25 W average power capability.

Small lasers in flow cytometry.

PubMed

Telford, William G

2004-01-01

Laser technology has made tremendous advances in recent years, particularly in the area of diode and diode-pumped solid state sources. Flow cytometry has been a direct beneficiary of these advances, as these small, low-maintenance, inexpensive lasers with reasonable power outputs are integrated into flow cytometers. In this chapter we review the contribution and potential of solid-state lasers to flow cytometry, and show several examples of these novel sources integrated into production flow cytometers. Technical details and critical parameters for successful application of these lasers for biomedical analysis are reviewed.

A simple photoionization scheme for characterizing electron and ion spectrometers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wituschek, A.; Vangerow, J. von; Grzesiak, J.

We present a simple diode laser-based photoionization scheme for generating electrons and ions with well-defined spatial and energetic (≲2 eV) structures. This scheme can easily be implemented in ion or electron imaging spectrometers for the purpose of off-line characterization and calibration. The low laser power ∼1 mW needed from a passively stabilized diode laser and the low flux of potassium atoms in an effusive beam make our scheme a versatile source of ions and electrons for applications in research and education.

Random laser illumination: an ideal source for biomedical polarization imaging?

NASA Astrophysics Data System (ADS)

Carvalho, Mariana T.; Lotay, Amrit S.; Kenny, Fiona M.; Girkin, John M.; Gomes, Anderson S. L.

2016-03-01

Imaging applications increasingly require light sources with high spectral density (power over spectral bandwidth. This has led in many cases to the replacement of conventional thermal light sources with bright light-emitting diodes (LEDs), lasers and superluminescent diodes. Although lasers and superluminescent diodes appear to be ideal light sources due to their narrow bandwidth and power, however, in the case of full-field imaging, their spatial coherence leads to coherent artefacts, such as speckle, that corrupt the image. LEDs, in contrast, have lower spatial coherence and thus seem the natural choice, but they have low spectral density. Random Lasers are an unconventional type of laser that can be engineered to provide low spatial coherence with high spectral density. These characteristics makes them potential sources for biological imaging applications where specific absorption and reflection are the characteristics required for state of the art imaging. In this work, a Random Laser (RL) is used to demonstrate speckle-free full-field imaging for polarization-dependent imaging in an epi-illumination configuration. We compare LED and RL illumination analysing the resulting images demonstrating that the RL illumination produces an imaging system with higher performance (image quality and spectral density) than that provided by LEDs.

White light emitting diode based on InGaN chip with core/shell quantum dots

NASA Astrophysics Data System (ADS)

Shen, Changyu; Hong, Yan; Ma, Jiandong; Ming, Jiangzhou

2009-08-01

Quantum dots have many applications in optoelectronic device such as LEDs for its many superior properties resulting from the three-dimensional confinement effect of its carrier. In this paper, single chip white light-emitting diodes (WLEDs) were fabricated by combining blue InGaN chip with luminescent colloidal quantum dots (QDs). Two kinds of QDs of core/shell CdSe /ZnS and core/shell/shell CdSe /ZnS /CdS nanocrystals were synthesized by thermal deposition using cadmium oxide and selenium as precursors in a hot lauric acid and hexadecylamine trioctylphosphine oxide hybrid. This two kinds of QDs exhibited high photoluminescence efficiency with a quantum yield more than 41%, and size-tunable emission wavelengths from 500 to 620 nm. The QDs LED mainly consists of flip luminescent InGaN chip, glass ceramic protective coating, glisten cup, QDs using as the photoluminescence material, pyroceram, gold line, electric layer, dielectric layer, silicon gel and bottom layer for welding. The WLEDs had the CIE coordinates of (0.319, 0.32). The InGaN chip white-light-emitting diodes with quantum dots as the emitting layer are potentially useful in illumination and display applications.

Quaternary laser devices: history and state of the art

NASA Astrophysics Data System (ADS)

Eliseev, Petr G.

1993-05-01

Quaternary alloys of semiconductor compounds are suitable materials for wide-spectrum optoelectronic applications. The most important property of these efficient luminescent materials is the opportunity to fit the lattice parameter in some range to a given value corresponding to another crystalline material. This leads to the method to construct defect-free and stress-free heterojunctions, which was used for the preparation of a number of laser and LED devices. Quaternaries of InGaAsP, InGaSbAs, InSbAsP, PbSnTeSe, and other alloys were introduced into practical usage particularly in diode laser devices. The alloy InGaAsP appears to be one of the most widely used in optoelectronic applications at present as it covers ranges near 1.3 and 1.55 micrometers wavelengths of fiber-optic communication. For the spectral range near 2 micrometers the alloy InGaSbAs seems to be most attractive, and cw-operating diode lasers at room temperature were demonstrated at 2.0 - 2.4 micrometers . The alloy PbSnTeSe was used to obtain a longest wave of diode laser emission 46 micrometers . Quaternaries played an important role in the development of the semiconductor optoelectronics during the last two decades.

Experiments Using a Tunnel Diode Oscillator

ERIC Educational Resources Information Center

Fox, John N.; Trefny, John U.

1975-01-01

Describes an apparatus suitable for measuring magnetic susceptibility in the undergraduate laboratory. Several applications are considered in detail, and extension of the technique to nonmagnetic studies is briefly discussed. (Author)

Study of natural organic dyes as active material for fabrication of organic light emitting diodes

NASA Astrophysics Data System (ADS)

Sánchez Juárez, A.; Castillo, D.; Guaman, A.; Espinosa, S.; Obregón, D.

2016-09-01

The scientific community and some sectors of industry have been working with organic dyes for successful applications in OLED's, OSC's, however, most of the used dyes and pigments are synthetic. In this work is investigated the use of natural dyes for its application in organic light emitting diodes, some of the studied species are chili, blackberry, guayacan flower, cochinilla, tree tomato, capuli, etc. In this study the dyes are deposited by direct deposition and SOL-GEL process doped with the natural organic dye, both methods show good performance and lower fabrication costs for dye extraction, this represents a new alternative for the fabrication of OLED devices with low requirements in technology. Most representative results are presented for Dactylopius Coccus Costa (cochinilla) and raphanus sativus' skin.

Transparent active matrix organic light-emitting diode displays driven by nanowire transistor circuitry.

PubMed

Ju, Sanghyun; Li, Jianfeng; Liu, Jun; Chen, Po-Chiang; Ha, Young-Geun; Ishikawa, Fumiaki; Chang, Hsiaokang; Zhou, Chongwu; Facchetti, Antonio; Janes, David B; Marks, Tobin J

2008-04-01

Optically transparent, mechanically flexible displays are attractive for next-generation visual technologies and portable electronics. In principle, organic light-emitting diodes (OLEDs) satisfy key requirements for this application-transparency, lightweight, flexibility, and low-temperature fabrication. However, to realize transparent, flexible active-matrix OLED (AMOLED) displays requires suitable thin-film transistor (TFT) drive electronics. Nanowire transistors (NWTs) are ideal candidates for this role due to their outstanding electrical characteristics, potential for compact size, fast switching, low-temperature fabrication, and transparency. Here we report the first demonstration of AMOLED displays driven exclusively by NW electronics and show that such displays can be optically transparent. The displays use pixel dimensions suitable for hand-held applications, exhibit 300 cd/m2 brightness, and are fabricated at temperatures suitable for integration on plastic substrates.

Applications of Light Emitting Diodes in Health Care.

PubMed

Dong, Jianfei; Xiong, Daxi

2017-11-01

Light emitting diodes (LEDs) have become the main light sources for general lighting, due to their high lumen efficiency and long life time. Moreover, their high bandwidth and the availability of diverse wavelength contents ranging from ultraviolet to infrared empower them with great controllability in tuning brightness, pulse durations and spectra. These parameters are the essential ingredients of the applications in medical imaging and therapies. Despite the fast advances in both LED technologies and their applications, few reviews have been seen to link the controllable emission properties of LEDs to these applications. The objective of this paper is to bridge this gap by reviewing the main control techniques of LEDs that enable creating enhanced lighting patterns for imaging and generating effective photon doses for photobiomodulation. This paper also provides the basic mechanisms behind the effective LED therapies in treating cutaneous and neurological diseases. The emerging field of optogenetics is also discussed with a focus on the application of LEDs. The multidisciplinary topics reviewed in this paper can help the researchers in LEDs, imaging, light therapy and optogenetics better understand the basic principles in each other's field; and hence to stimulate the application of LEDs in health care.

Management of Chronic Periodontitis Using Chlorhexidine Chip and Diode Laser-A Clinical Study.

PubMed

Jose, Kachapilly Arun; Ambooken, Majo; Mathew, Jayan Jacob; Issac, Annie Valayil; Kunju, Ajithkumar Parachalil; Parameshwaran, Renjith Athirkandathil

2016-04-01

The use of adjuncts like chlorhexidine local delivery and diode laser decontamination have been found to improve the clinical outcomes of scaling and root planing in non-surgical periodontal therapy in patients with chronic periodontitis. To evaluate the effects of diode laser and chlorhexidine chip as adjuncts to scaling and root planing in the management of chronic periodontitis. The objective is to evaluate the outcome of chlorhexidine chip and diode laser as adjuncts to scaling and root planing on clinical parameters like Plaque Index, Gingival Index, probing pocket depth and clinical attachment level. Department of Periodontics. Randomized clinical trial with split mouth design. Fifteen chronic periodontitis patients having a probing pocket depth of 5mm-7mm on at least one interproximal site in each quadrant of the mouth were included in the study. After initial treatment, four sites in each patient were randomly subjected to scaling and root planing (control), chlorhexidine chip application (CHX chip group), diode laser (810 nm) decontamination (Diode laser group) or combination of both (Diode laser and chip group). Plaque Index (PI), Gingival Index (GI), probing pocket depth (PPD) and clinical attachment level (CAL) were assessed at baseline, one month and three months. Results were statistically analysed using paired T test, one-way ANOVA, Tukey's HSD test and repeated measure ANOVA. Post-treatment, the test and control sites showed a statistically significant reduction in PI, GI, PPD, and CAL. After three months, a mean PPD reduction of 1.47±0.52 mm in control group, 1.40±0.83 mm in diode laser group, 2.67±0.62 mm in CHX group, and 2.80± 0.77 mm in combination group was seen. The mean gain in CAL were 1.47±0.52 mm in the control group, 1.40±0.83 mm in diode laser group, 2.67± 0.49 mm in CHX group and 2.67± 0.82 mm in combination group respectively. The differences in PPD reduction and CAL gain between control group and CHX chip and combination groups were statistically significant (p<0.05) at three months, whereas, the diode laser group did not show any significant difference from the control group. Chlorhexidine local delivery alone or in combination with diode laser decontamination is effective in reducing probing pocket depth and improving clinical attachment levels when used as adjuncts to scaling and root planing in non-surgical periodontal therapy of patients with chronic periodontitis.

Management of Chronic Periodontitis Using Chlorhexidine Chip and Diode Laser-A Clinical Study

PubMed Central

Ambooken, Majo; Mathew, Jayan Jacob; Issac, Annie Valayil; Kunju, Ajithkumar Parachalil; Parameshwaran, Renjith Athirkandathil

2016-01-01

Introduction The use of adjuncts like chlorhexidine local delivery and diode laser decontamination have been found to improve the clinical outcomes of scaling and root planing in non-surgical periodontal therapy in patients with chronic periodontitis. Aim To evaluate the effects of diode laser and chlorhexidine chip as adjuncts to scaling and root planing in the management of chronic periodontitis. The objective is to evaluate the outcome of chlorhexidine chip and diode laser as adjuncts to scaling and root planing on clinical parameters like Plaque Index, Gingival Index, probing pocket depth and clinical attachment level. Study and Design Department of Periodontics. Randomized clinical trial with split mouth design. Materials and Methods Fifteen chronic periodontitis patients having a probing pocket depth of 5mm-7mm on at least one interproximal site in each quadrant of the mouth were included in the study. After initial treatment, four sites in each patient were randomly subjected to scaling and root planing (control), chlorhexidine chip application (CHX chip group), diode laser (810 nm) decontamination (Diode laser group) or combination of both (Diode laser and chip group). Plaque Index (PI), Gingival Index (GI), probing pocket depth (PPD) and clinical attachment level (CAL) were assessed at baseline, one month and three months. Statistical analysis Results were statistically analysed using paired T test, one-way ANOVA, Tukey’s HSD test and repeated measure ANOVA. Results Post-treatment, the test and control sites showed a statistically significant reduction in PI, GI, PPD, and CAL. After three months, a mean PPD reduction of 1.47±0.52 mm in control group, 1.40±0.83 mm in diode laser group, 2.67±0.62 mm in CHX group, and 2.80± 0.77 mm in combination group was seen. The mean gain in CAL were 1.47±0.52 mm in the control group, 1.40±0.83 mm in diode laser group, 2.67± 0.49 mm in CHX group and 2.67± 0.82 mm in combination group respectively. The differences in PPD reduction and CAL gain between control group and CHX chip and combination groups were statistically significant (p<0.05) at three months, whereas, the diode laser group did not show any significant difference from the control group. Conclusion Chlorhexidine local delivery alone or in combination with diode laser decontamination is effective in reducing probing pocket depth and improving clinical attachment levels when used as adjuncts to scaling and root planing in non-surgical periodontal therapy of patients with chronic periodontitis. PMID:27190958

Rapid Identification of unstable acyl glucoside flavonoids of Oxytropis racemosa Turcz by high-performance liquid chromatography-diode array detection-electrospray ionisation/multi-stage mass spectrometry.

PubMed

Song, Shuang; Zheng, Xiu-Ping; Liu, Wei-Dong; Du, Rui-Fang; Feng, Zi-Ming; Zhang, Pei-Cheng; Bi, Li-Fu

2013-02-01

Oxytropis racemosa Turcz is an important minority medicine that is used mainly to improve children's indigestion, especially in inner Mongolia and Tibet. Previous studies indicated that the characteristic constituents of this plant are acylated flavonoids. Rapidly identify the characteristic chemical constituents of O. racemosa by high-performance liquid chromatography-diode array detection-electrospray ionisation/multi-stage mass spectrometry (HPLC-DAD-ESI/MS(n) ) and suggest a useful method to control the quality of this medicinal plant. In the HPLC fingerprint, 32 flavonoids were tentatively identified by a detailed analysis of their mass spectra, UV spectra and retention times. Furthermore, 13 flavonoids were confirmed by comparison with previously isolated compounds obtained from O. racemosa. In total, 32 flavonoids, including 13 flavonoids with 3-hydroxy-3-methylglutaric acid (HMG) moieties and four flavonoids with 3-malonyl moieties, were identified in the extract of O. racemosa. Among the compounds identified, 10 were characterised as new compounds for their particular acylated sugar moieties. The method described is effective for obtaining a comprehensive phytochemical profile of plants containing unstable acylated flavonoids. The method is also useful for constructing the chromatographic fingerprint of the minority medicine -O. racemosa Turcz for quality control. Copyright © 2012 John Wiley & Sons, Ltd.

In Vitro Evaluation of Dentin Hydraulic Conductance After 980 nm Diode Laser Irradiation.

PubMed

Rizzante, Fabio A P; Maenosono, Rafael M; Duarte, Marco A H; Furuse, Adilson Y; Palma-Dibb, Regina G; Ishikiriama, Sérgio K

2016-03-01

Dentin hypersensitivity treatments are based on the physical obliteration of the dentinal tubules to reduce hydraulic conductance. The aim of the present study is to evaluate the hydraulic conductance of bovine root dentin after irradiation with a 980-nm diode laser, with or without associated fluoride varnish. Sixty bovine root dentin specimens were divided into six groups (n = 10 in each group): G1, G3, and G5 (0.5 W, 0.7 W, and 1 W diode laser, respectively); G2, G4, and G6 (fluoride varnish application + 0.5 W, 0.7 W, and 1 W diode laser, respectively). The dentin hydraulic conductance was evaluated at four time periods with a fluxmeter: 1) with smear layer, 2) after 37% phosphoric acid etching, 3) after the treatments, and 4) after 6% citric acid challenge. After the dentinal fluid flow measurements, specimens were also evaluated for mineral composition using energy dispersive X-ray spectroscopy (EDS). Analysis demonstrated a better result with increased irradiation power (P < 0.001), especially if the diode laser irradiation was associated with the application of fluoride varnish (P < 0.001), ensuring a greater reduction in permeability. Considering the groups treated only with laser irradiation, the 1 W group was superior when compared with the 0.5 W and 0.7 W irradiated groups immediately after treatment (P < 0.001). After citric acid testing, all groups showed similar results, except when comparing the 1 W groups with the 0.5 W groups (P = 0.04). EDS results of the irradiated groups showed an increase in the proportion of calcium and phosphorus ions, which demonstrates a superficial composition modification after laser treatments. Laser irradiation of exposed dentin promoted significant reduction in the dentin hydraulic conductance, mainly with higher energy densities and association with fluoride varnish.

"Application of Tunable Diode Laser Spectrometry to Isotopic Studies for Exobiology"

NASA Technical Reports Server (NTRS)

Sauke, Todd B.

1999-01-01

Computer-controlled electrically-activated valves for rapid gas-handling have been incorporated into the Stable Isotope Laser Spectrometer (SILS) which now permits rapid filling and evacuating of the sample and reference gas cells, Experimental protocols have been developed to take advantage of the fast gas handling capabilities of the instrument and to achieve increased accuracy which results from reduced instrumental drift during rapid isotopic ratio measurements. Using these protocols' accuracies of 0.5 del (0.05%) have been achieved in measurements of 13C/12C in carbon dioxide. Using the small stable isotope laser spectrometer developed in a related PIDDP project of the Co-I, protocols for acquisition of rapid sequential calibration spectra were developed which resulted in 0.5 del accuracy also being achieved in this less complex instrument. An initial version of software for automatic characterization of tunable diode lasers has been developed and diodes have been characterized in order to establish their spectral output properties. A new state-of-the-art high operating temperature (200 K) mid infrared diode laser was purchased (through NASA procurement) and characterized. A thermo-electrically cooled mid infrared tunable diode laser system for use with high temperature operation lasers was developed. In addition to isotopic ratio measurements of carbon and oxygen, measurements of a third biologically important element (15N/14N in N2O gas) have been achieved to a preliminary accuracy of about 0.2%. Transfer of the basic SILS technology to the commercial sector is proceeding under an unfunded Space Act Agreement between NASA and SpiraMed, a medical diagnostic instrument company. Two patents have been issued. Foreign patents based on these two US patents have been applied for and are expected to be issued. A preliminary design was developed for a thermo-electrically cooled SILS instruments for application to planetary space flight exploration missions.

Pseudo-Random Modulation of a Laser Diode for Generating Ultrasonic Longitudinal Waves

NASA Technical Reports Server (NTRS)

Madaras, Eric I.; Anatasi, Robert F.

2004-01-01

Laser generated ultrasound systems have historically been more complicated and expensive than conventional piezoelectric based systems, and this fact has relegated the acceptance of laser based systems to niche applications for which piezoelectric based systems are less suitable. Lowering system costs, while improving throughput, increasing ultrasound signal levels, and improving signal-to-noise are goals which will help increase the general acceptance of laser based ultrasound. One current limitation with conventional laser generated ultrasound is a material s damage threshold limit. Increasing the optical power to generate more signal eventually damages the material being tested due to rapid, high heating. Generation limitations for laser based ultrasound suggests the use of pulse modulation techniques as an alternate generation method. Pulse modulation techniques can spread the laser energy over time or space, thus reducing laser power densities and minimizing damage. Previous experiments by various organizations using spatial or temporal pulse modulation have been shown to generate detectable surface, plate, and bulk ultrasonic waves with narrow frequency bandwidths . Using narrow frequency bandwidths improved signal detectability, but required the use of expensive and powerful lasers and opto-electronic systems. The use of a laser diode to generate ultrasound is attractive because of its low cost, small size, light weight, simple optics and modulation capability. The use of pulse compression techniques should allow certain types of laser diodes to produce usable ultrasonic signals. The method also does not need to be limited to narrow frequency bandwidths. The method demonstrated here uses a low power laser diode (approximately 150 mW) that is modulated by controlling the diode s drive current and the resulting signal is recovered by cross correlation. A potential application for this system which is briefly demonstrated is in detecting signals in thick composite materials where attenuation is high and signal amplitude and bandwidth are at a premium.

Flexible amorphous silicon PIN diode x-ray detectors

NASA Astrophysics Data System (ADS)

Marrs, Michael; Bawolek, Edward; Smith, Joseph T.; Raupp, Gregory B.; Morton, David

2013-05-01

A low temperature amorphous silicon (a-Si) thin film transistor (TFT) and amorphous silicon PIN photodiode technology for flexible passive pixel detector arrays has been developed using active matrix display technology. The flexible detector arrays can be conformed to non-planar surfaces with the potential to detect x-rays or other radiation with an appropriate conversion layer. The thin, lightweight, and robust backplanes may enable the use of highly portable x-ray detectors for use in the battlefield or in remote locations. We have fabricated detector arrays up to 200 millimeters along the diagonal on a Gen II (370 mm x 470 mm rectangular substrate) using plasma enhanced chemical vapor deposition (PECVD) a-Si as the active layer and PECVD silicon nitride (SiN) as the gate dielectric and passivation. The a-Si based TFTs exhibited an effective saturation mobility of 0.7 cm2/V-s, which is adequate for most sensing applications. The PIN diode material was fabricated using a low stress amorphous silicon (a-Si) PECVD process. The PIN diode dark current was 1.7 pA/mm2, the diode ideality factor was 1.36, and the diode fill factor was 0.73. We report on the critical steps in the evolution of the backplane process from qualification of the low temperature (180°C) TFT and PIN diode process on the 150 mm pilot line, the transfer of the process to flexible plastic substrates, and finally a discussion and demonstration of the scale-up to the Gen II (370 x 470 mm) panel scale pilot line.

Four-Pass Coupler for Laser-Diode-Pumped Solid-State Laser

NASA Technical Reports Server (NTRS)

Coyle, Donald B.

2008-01-01

A four-pass optical coupler affords increased (in comparison with related prior two-pass optical couplers) utilization of light generated by a laser diode in side pumping of a solid-state laser slab. The original application for which this coupler was conceived involves a neodymium-doped yttrium aluminum garnet (Nd:YAG) crystal slab, which, when pumped by a row of laser diodes at a wavelength of 809 nm, lases at a wavelength of 1,064 nm. Heretofore, typically, a thin laser slab has been pumped in two passes, the second pass occurring by virtue of reflection of pump light from a highly reflective thin film on the side opposite the side through which the pump light enters. In two-pass pumping, a Nd:YAG slab having a thickness of 2 mm (which is typical) absorbs about 84 percent of the 809-nm pump light power, leaving about 16 percent of the pump light power to travel back toward the laser diodes. This unused power can cause localized heating of the laser diodes, thereby reducing their lifetimes. Moreover, if the slab is thinner than 2 mm, then even more unused power travels back toward the laser diodes. The four-pass optical coupler captures most of this unused pump light and sends it back to the laser slab for two more passes. As a result, the slab absorbs more pump light, as though it were twice as thick. The gain and laser cavity beam quality of a smaller laser slab in conjunction with this optical coupler can thus be made comparable to those of a larger two-pass-pumped laser slab.

Femtosecond Cr:LiSAF and Cr:LiCAF lasers pumped by tapered diode lasers.

PubMed

Demirbas, Umit; Schmalz, Michael; Sumpf, Bernd; Erbert, Götz; Petrich, Gale S; Kolodziejski, Leslie A; Fujimoto, James G; Kärtner, Franz X; Leitenstorfer, Alfred

2011-10-10

We report compact, low-cost and efficient Cr:Colquiriite lasers that are pumped by high brightness tapered laser diodes. The tapered laser diodes provided 1 to 1.2 W of output power around 675 nm, at an electrical-to-optical conversion efficiency of about 30%. Using a single tapered diode laser as the pump source, we have demonstrated output powers of 500 mW and 410 mW together with slope efficiencies of 47% and 41% from continuous wave (cw) Cr:LiSAF and Cr:LiCAF lasers, respectively. In cw mode-locked operation, sub-100-fs pulse trains with average power between 200 mW and 250 mW were obtained at repetition rates around 100 MHz. Upon pumping the Cr:Colquiriite lasers with two tapered laser diodes (one from each side of the crystal), we have observed scaling of cw powers to 850 mW in Cr:LiSAF and to 650 mW in Cr:LiCAF. From the double side pumped Cr:LiCAF laser, we have also obtained ~220 fs long pulses with 5.4 nJ of pulse energy at 77 MHz repetition rate. These are the highest energy levels reported from Cr:Colquiriite so far at these repetition rates. Our findings indicate that tapered diodes in the red spectral region are likely to become the standard pump source for Cr:Colquiriite lasers in the near future. Moreover, the simplified pumping scheme might facilitate efficient commercialization of Cr:Colquiriite systems, bearing the potential to significantly boost applications of cw and femtosecond lasers in this spectral region (750-1000 nm).

Comparative clinical evaluation of gallium-aluminum-arsenide diode laser and potassium nitrate in treating dentinal hypersensitivity.

PubMed

Tevatia, Siddharth; Khatri, Vivek; Sharma, Nikhil; Dodwad, Vidya

2017-01-01

Dentinal hypersensitivity (DH) is a chronic disorder in which patients report sharp and acute pain to a variety of stimuli. Till date, a standardized procedure to treat DH is missing, though several alternative treatment strategies have been designed, including laser therapies. The aim of the study was to treat DH with minimum chemical concentration and least laser energy level with longer follow-up period. One hundred and twenty patients were randomly divided into four groups: (i) Group 1-5% potassium nitrate (KNO 3 ); (ii) Group 2 - gallium-aluminum-arsenide diode laser (62.2 J/cm 2 , wavelength - 980 nm, noncontact pulse mode, and power wattage - 0.5 W); (iii) Group 3 - combined 5% KNO 3 and the diode laser; and (iv) Group 4 - placebo (control). The visual analog scale (VAS) scores were recorded, analyzed, and compared to tactile stimuli, cold water, and air blast tests at different intervals for 6 weeks. Synergistic use of 5% KNO 3 and diode laser (Group 3) significantly reduced the DH pain, which was almost negligible after 6 th week (97%-99% of the pain was reported to be relieved) and showed promising results than any other studied groups. Further, the diode laser (Group 2) showed better results than 5% KNO 3 (Group 1). One-way ANOVA and Bonferroni correction post hoc test revealed the combination of groups with significant differences in the mean VAS scores at the different interval of time ( P < 0.01). Convincingly, the combined application of 5% KNO 3 with the diode laser can be recommended for treating DH patients.

Flexible Cryogenic Temperature and Liquid-Level Probes

NASA Technical Reports Server (NTRS)

Haberbusch, Mark

2005-01-01

Lightweight, flexible probes have been developed for measuring temperatures at multiple locations in tanks that contain possibly pressurized cryogenic fluids. If the fluid in a given tank is subcritical (that is, if it consists of a liquid and its vapor), then in one of two modes of operation, the temperature measurements made by a probe of this type can be used to deduce the approximate level of the liquid. The temperature sensors are silicon diodes located at intervals along a probe. If the probe is to be used to measure a temperature gradient along a given axis in the tank, then the probe must be mounted along that axis. In the temperature-measurement mode, a constant small electric current is applied to each diode and the voltage across the diode a known function of the current and temperature is measured as an indication of its temperature. For the purpose of this measurement, small electric current signifies a current that is not large enough to cause a significant increase in the measured temperature. More specifically, the probe design calls for a current of 10 A, which, in the cryogenic temperature range of interest, generates heat at a rate of only about 0.01 mW per diode. In the liquid-level-sensing mode, one applies a larger current (30 mA) to each diode so as to heat each diode appreciably (with a power of about 36 mW in the temperature range of interest). Because the liquid cools the diode faster than does the vapor, the temperature of the diode is less when the diode is immersed in the liquid than when it is above the surface of the liquid. Thus, the temperature (voltage) reading from each diode can be used to determine whether the liquid level is above or below the diode, and one can deduce that the liquid level lies between two adjacent diodes, the lower one of which reads a significantly lower temperature. The aforementioned techniques for measuring temperature and deducing liquid level are not new. What is new here are the designs of the probes and of associated external electronic circuitry. In each probe, the diodes and the lead wires are embedded in a strong, lightweight, flexible polyimide strip. Each probe is constructed as an integral unit that includes a multipin input/output plug or socket for solderless connection of the lead wires to the external circuitry. The polyimide strip includes mounting tabs with holes that can accommodate rivets, screws, or other fasteners. Alternatively, a probe can be mounted by use of an epoxy. A probe can be manufactured to almost any length or width, and the diodes can be embedded at almost any desired location along and across the polyimide strip. In designing a probe for a specific application, one seeks a compromise between (1) minimizing the number of diodes in order to minimize the complexity of input/output connections and external electronic circuitry while (2) using enough diodes to obtain the required precision. Optionally, to minimize spurious heating of the cryogenic fluid, the external circuitry can be designed to apply power to the probe only during brief measurement intervals. Assuming that the external circuitry is maintained at a steady temperature, a power-on interval of only a few seconds is sufficient to obtain accurate data on temperatures and/or the height of the liquid/vapor interface.

Flexible Cryogenic Temperature and Liquid-Level Probes

NASA Technical Reports Server (NTRS)

Haberbusch, Mark

2003-01-01

Lightweight, flexible probes have been developed for measuring temperatures at multiple locations in tanks that contain possibly pressurized cryogenic fluids. If the fluid in a given tank is subcritical (that is, if it consists of a liquid and its vapor), then in one of two modes of operation, the temperature measurements made by a probe of this type can be used to deduce the approximate level of the liquid. The temperature sensors are silicon diodes located at intervals along a probe. If the probe is to be used to measure a temperature gradient along a given axis in the tank, then the probe must be mounted along that axis. In the non-liquid-level-sensing temperature-measurement mode, a constant small electric current is applied to each diode and the voltage across the diode . a known function of the current and temperature . is measured as an indication of its temperature. For the purpose of this measurement, "small electric current" signifies a current that is not large enough to cause a significant increase in the measured temperature. More specifically, the probe design calls for a current of 10 A, which, in the cryogenic temperature range of interest, generates heat at a rate of only about 0.01 mW per diode. In the liquid-level-sensing mode, one applies a larger current (30 mA) to each diode so as to heat each diode appreciably (with a power of about 36 mW in the temperature range of interest). Because the liquid cools the diode faster than does the vapor, the temperature of the diode is less when diode is immersed in the liquid than when it is above the surface of the liquid. Thus, the temperature (voltage) reading from each diode can be used to determine whether the liquid level is above or below the diode, and one can deduce that the liquid level lies between two adjacent diodes, the lower one of which reads a significantly lower temperature. The aforementioned techniques for measuring temperature and deducing liquid level are not new. What is new here are the designs of the probes and of associated external electronic circuitry. In each probe, the diodes and the lead wires are embedded in a strong, lightweight, flexible polyimide strip. Each probe is constructed as an integral unit that includes a multipin input/output plug or socket for solderless connection of the lead wires to the external circuitry. The polyimide strip includes mounting tabs with holes that can accommodate rivets, screws, or other fasteners. Alternatively, a probe can be mounted by use of an epoxy. A probe can be manufactured to almost any length or width, and the diodes can be embedded at almost any desired locations along and across the polyimide strip. In designing a probe for a specific application, one seeks a compromise between (1) minimizing the number of diodes in order to minimize the complexity of input/output connections and external electronic circuitry while (2) using enough diodes to obtain the required precision. Optionally, to minimize spurious heating of the cryogenic fluid, the external circuitry can be designed to apply power to the probe only during brief measurement intervals. Assuming that the external circuitry is maintained at a steady temperature, a power-on interval of only a few seconds is sufficient to obtain accurate data on temperatures and/or the height of the liquid/vapor interface.

Microjet-assisted dye-enhanced diode laser ablation of cartilaginous tissue

NASA Astrophysics Data System (ADS)

Pohl, John; Bell, Brent A.; Motamedi, Massoud; Frederickson, Chris J.; Wallace, David B.; Hayes, Donald J.; Cowan, Daniel

1994-08-01

Recent studies have established clinical application of laser ablation of cartilaginous tissue. The goal of this study was to investigate removal of cartilaginous tissue using diode laser. To enhance the interaction of laser light with tissue, improve the ablation efficiency and localize the extent of laser-induced thermal damage in surrounding tissue, we studied the use of a novel delivery system developed by MicroFab Technologies to dispense a known amount of Indocyanine Green (ICG) with a high spatial resolution to alter the optical properties of the tissue in a controlled fashion. Canine intervertebral disks were harvested and used within eight hours after collection. One hundred forty nL of ICG was topically applied to both annulus and nucleus at the desired location with the MicroJet prior to each irradiation. Fiber catheters (600 micrometers ) were used and positioned to irradiate the tissue with a 0.8 mm spot size. Laser powers of 3 - 10 W (Diomed, 810 nm) were used to irradiate the tissue with ten pulses (200 - 500 msec). Discs not stained with ICG were irradiated as control samples. Efficient tissue ablation (80 - 300 micrometers /pulse) was observed using ICG to enhance light absorption and confine thermal damage while there was no observable ablation in control studied. The extent of tissue damage observed microscopically was limited to 50 - 100 micrometers . The diode laser/Microjet combination showed promise for applications involving removal of cartilaginous tissue. This procedure can be performed using a low power compact diode laser, is efficient, and potentially more economical compared to procedures using conventional lasers.

Radio frequency diodes and circuits fabricated via adhesion lithography (Conference Presentation)

NASA Astrophysics Data System (ADS)

Georgiadou, Dimitra G.; Semple, James; Wyatt-Moon, Gwenhivir; Anthopoulos, Thomas D.

2016-09-01

The commercial interest in Radio Frequency Identification (RFID) tags keeps growing, as new application sectors, spanning from healthcare to electronic article surveillance (EAS) and personal identification, are constantly emerging for these types of electronic devices. The increasing demand for the so-called "smart labels" necessitates their high throughput manufacturing, and indeed on thin flexible substrates, that will reduce the cost and render them competitive to the currently widely employed barcodes. Adhesion Lithography (a-Lith) is a novel patterning technique that allows the facile high yield fabrication of co-planar large aspect ratio (<100,000) metal electrodes separated by a sub-20 nm gap on large area substrates of any type. Deposition of high mobility semiconductors from their solution at low, compatible with plastic substrates, temperatures and application of specific processing protocols can dramatically improve the performance of the fabricated Schottky diodes. It will be shown that in this manner both organic and inorganic high speed diodes and rectifiers can be obtained, operating at frequencies much higher than the 13.56 MHz benchmark, currently employed in passive RFID tags and near filed communications (NFC). This showcases the universality of this method towards fabricating high speed p- and n-type diodes, irrespective of the substrate, simply based on the extreme downscaling of key device dimensions obtained in these nanoscale structures. The potential for scaling up this technique at low cost, combined with the significant performance optimisation and improved functionality that can be attained through intelligent material selection, render a-Lith unique within the field of plastic electronics.

Development of an efficient DC-DC SEPIC converter using wide bandgap power devices for high step-up applications

NASA Astrophysics Data System (ADS)

Al-bayati, Ali M. S.; Alharbi, Salah S.; Alharbi, Saleh S.; Matin, Mohammad

2017-08-01

A highly efficient high step-up dc-dc converter is the major requirement in the integration of low voltage renewable energy sources, such as photovoltaic panel module and fuel cell stacks, with a load or utility. This paper presents the development of an efficient dc-dc single-ended primary-inductor converter (SEPIC) for high step-up applications. Three SEPIC converters are designed and studied using different combinations of power devices: a combination based on all Si power devices using a Si-MOSFET and a Si-diode and termed as Si/Si, a combination based on a hybrid of Si and SiC power devices using the Si-MOSFET and a SiC-Schottky diode and termed as Si/SiC, and a combination based on all SiC power devices using a SiC-MOSFET and the SiC-Schottky diode and termed as SiC/SiC. The switching behavior of the Si-MOSFET and SiC-MOSFET is characterized and analyzed within the different combinations at the converter level. The effect of the diode type on the converter's overall performance is also discussed. The switching energy losses, total power losses, and the overall performance effciency of the converters are measured and reported under different switching frequencies. Furthermore, the potential of the designed converters to operate efficiently at a wide range of input voltages and output powers is studied. The analysis and results show an outstanding performance efficiency of the designed SiC/SiC based converter under a wide range of operating conditions.

An in-vitro evaluation of the effect of 980 nm diode laser irradiation on intra-canal dentin surface and dentinal tubule openings after biomechanical preparation: Scanning electron microscopic study

PubMed Central

Jhingan, Pulkit; Sandhu, Meera; Jindal, Garima; Goel, Deepti; Sachdev, Vinod

2015-01-01

Context: Very recently, diode laser has been used for disinfecting the root canals in endodontic treatment and increasing its success rate and longevity utilizing the thermal effect of laser on surrounding tissues. Aims: The aim of this study is to evaluate the effect of 980 nm laser irradiation on intra-canal dentin surface – scanning electron microscopic (SEM) - in-vitro study. Methods: A total of 40 single-rooted freshly extracted permanent teeth were collected. Teeth were sectioned at the cemento-enamel junction using diamond disc. Root canals of all samples were prepared using hand ProTaper, which were randomly assigned into two groups (n = 20 each). Group 1: Receiving no treatment after biomechanical preparation; Group 2: 980 nm diode laser-treated root canals. Teeth were prepared for SEM analysis to check the size of intra-canal dentinal tubule openings. Statistical Analysis Used: Data were analyzed using SPSS V.16 software and compared using Levene's and independent t-test. Results: On statistical analysis, width of intracanal dentinal tubule openings in Group 1 (control) was significantly higher than those observed in Group 2 (diode laser-treated) (P < 0.001). Conclusion: This study showed that the application of 980 nm diode laser on intra-radicular dentin resulted in ultrastructural alterations resulting in melting of dentin. PMID:26097338

Comparison of different focusing fiber tips for improved oral diode laser surgery.

PubMed

Stock, Karl; Stegmayer, Thomas; Graser, Rainer; Förster, Wolfram; Hibst, Raimund

2012-12-01

State of the art for use of the fiber guided diode laser in dental therapy is the application of bare fibers. A novel concept with delivery fiber and exchangeable fiber tips enables the use of tips with special and optimized geometries for various applications. The aim of this study is the comparison of different focusing fiber tips for enhanced cutting efficacy in oral surgery. For this purpose various designs of tip geometry were investigated and optimized by ray tracing simulations. Two applicators, one with a sphere, and another one with a taper, were realized and tested on porcine gingiva (diode laser, 940 nm, 5 W/cw; 7 W/modulated). The cutting depth and quality were determined by light microscope. Histological sections of the cuts were prepared by a cryo-microtome and microscopically analyzed to determine the cut depths and thermal damage zones. The simulations show that, using a sphere as fiber tip, an intensity increase of up to a factor of 16.2 in air, and 13.2 in water compared to a bare 200 µm fiber can be achieved. Although offering high focusing factor in water, the cutting quality of the sphere was rather poor. This is probably caused by a derogation of the focusing quality due to contamination during cutting and light scattering. Much better results were achieved with conically shaped fiber tips. Compared to bare fibers they exhibit improved handling properties with no hooking, more regular and deeper cuts (5 W/cw: 2,393 ± 468 µm, compared to the cleaved bare fiber 5 W/cw: 711 ± 268 µm). The thermal damage zones of the cuts are comparable for the various tips and fibers. In conclusion the results of our study show that cutting quality and efficiency of diode laser on soft tissue can be significantly improved using conically shaped fiber tips. Copyright © 2012 Wiley Periodicals, Inc.

Developments in space power components for power management and distribution

NASA Technical Reports Server (NTRS)

Renz, D. D.

1984-01-01

Advanced power electronic components development for space applications is discussed. The components described include transformers, inductors, semiconductor devices such as transistors and diodes, remote power controllers, and transmission lines.

Advances in solid state laser technology for space and medical applications

NASA Technical Reports Server (NTRS)

Byvik, C. E.; Buoncristiani, A. M.

1988-01-01

Recent developments in laser technology and their potential for medical applications are discussed. Gas discharge lasers, dye lasers, excimer lasers, Nd:YAG lasers, HF and DF lasers, and other commonly used lasers are briefly addressed. Emerging laser technology is examined, including diode-pumped lasers and other solid state lasers.

Synthesis and Electroluminescent Property of New Orange Iridium Compounds for Flexible White Organic Light Emitting Diodes.

PubMed

Lee, Ho Won; Jeong, Hyunjin; Kim, Young Kwan; Ha, Yunkyoung

2015-10-01

Recently, white organic light-emitting diodes (OLEDs) have aroused considerable attention because they have the potential of next-generation flexible displays and white illuminated applications. White OLED applications are particularly heading to the industry but they have still many problems both materials and manufacturing. Therefore, we proposed that the new iridium compounds of orange emitters could be demonstrated and also applied to flexible white OLEDs for verification of potential. First, we demonstrated the chemical properties of new orange iridium compounds. Secondly, conventional two kinds of white phosphorescent OLEDs were fabricated by following devices; indium-tin oxide coated glass substrate/4,4'-bis[N-(napthyl)-N-phenylamino]biphenyl/N,N'-dicarbazolyl-3,5-benzene doped with blue and new iridium compounds for orange emitting 8 wt%/1,3,5-tris[N-phenylbenzimidazole-2-yl]benzene/lithium quinolate/aluminum. In addition, we fabricated white OLEDs using these emitters to verify the potential on flexible substrate. Therefore, this work could be proposed that white light applications can be applied and could be extended to additional research on flexible applications.

High-Modulation-Speed LEDs Based on III-Nitride

NASA Astrophysics Data System (ADS)

Chen, Hong

III-nitride InGaN light-emitting diodes (LEDs) enable wide range of applications in solid-state lighting, full-color displays, and high-speed visible-light communication. Conventional InGaN quantum well LEDs grown on polar c-plane substrate suffer from quantum confined Stark effect due to the large internal polarization-related fields, leading to a reduced radiative recombination rate and device efficiency, which limits the performance of InGaN LEDs in high-speed communication applications. To circumvent these negative effects, non-trivial-cavity designs such as flip-chip LEDs, metallic grating coated LEDs are proposed. This oral defense will show the works on the high-modulation-speed LEDs from basic ideas to applications. Fundamental principles such as rate equations for LEDs/laser diodes (LDs), plasmonic effects, Purcell effects will be briefly introduced. For applications, the modal properties of flip-chip LEDs are solved by implementing finite difference method in order to study the modulation response. The emission properties of highly polarized InGaN LEDs coated by metallic gratings are also investigated by finite difference time domain method.

Simulation, Model Verification and Controls Development of Brayton Cycle PM Alternator: Testing and Simulation of 2 KW PM Generator with Diode Bridge Output

NASA Technical Reports Server (NTRS)

Stankovic, Ana V.

2003-01-01

Professor Stankovic will be developing and refining Simulink based models of the PM alternator and comparing the simulation results with experimental measurements taken from the unit. Her first task is to validate the models using the experimental data. Her next task is to develop alternative control techniques for the application of the Brayton Cycle PM Alternator in a nuclear electric propulsion vehicle. The control techniques will be first simulated using the validated models then tried experimentally with hardware available at NASA. Testing and simulation of a 2KW PM synchronous generator with diode bridge output is described. The parameters of a synchronous PM generator have been measured and used in simulation. Test procedures have been developed to verify the PM generator model with diode bridge output. Experimental and simulation results are in excellent agreement.

Diode pumped, regenerative Nd:YAG ring amplifier for space application

NASA Technical Reports Server (NTRS)

Coyle, D. B.; Kay, Richard B.; Degnan, John J.; Krebs, Danny J.; Seery, Bernard D.

1992-01-01

The study reviews the research and development of a prototype laser used to study one possible method of short-pulse production and amplification, in particular, a pulsed Nd:YAG ring laser pumped by laser diode arrays and injected seeded by a 100-ps source. The diode array pumped, regenerative amplifier consists of only five optical elements, two mirrors, one thin film polarizer, one Nd:YAG crystal, and one pockels cell. The pockels cell performed both as a Q-switch and a cavity dumper for amplified pulse ejection through the thin film polarizer. The total optical efficiency was low principally due to the low gain provided by the 2-bar pumped laser head. After comparison with a computer model, a real seed threshold of about 10 exp -15 J was achieved because only about 0.1 percent of the injected energy mode-matched with the ring.

Gate-Controlled BP-WSe2 Heterojunction Diode for Logic Rectifiers and Logic Optoelectronics.

PubMed

Li, Dong; Wang, Biao; Chen, Mingyuan; Zhou, Jun; Zhang, Zengxing

2017-06-01

p-n junctions play an important role in modern semiconductor electronics and optoelectronics, and field-effect transistors are often used for logic circuits. Here, gate-controlled logic rectifiers and logic optoelectronic devices based on stacked black phosphorus (BP) and tungsten diselenide (WSe 2 ) heterojunctions are reported. The gate-tunable ambipolar charge carriers in BP and WSe 2 enable a flexible, dynamic, and wide modulation on the heterojunctions as isotype (p-p and n-n) and anisotype (p-n) diodes, which exhibit disparate rectifying and photovoltaic properties. Based on such characteristics, it is demonstrated that BP-WSe 2 heterojunction diodes can be developed for high-performance logic rectifiers and logic optoelectronic devices. Logic optoelectronic devices can convert a light signal to an electric one by applied gate voltages. This work should be helpful to expand the applications of 2D crystals. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

A ten-element array of individually addressable channeled-substrate-planar AlGaAs diode lasers

NASA Technical Reports Server (NTRS)

Carlin, D. B.; Goldstein, B.; Bednarz, J. P.; Harvey, M. G.; Dinkel, N. A.

1987-01-01

The fabrication of arrays of channeled-substrate-planar (CSP) AlGaAs diode lasers which emit up to 150 mW CW in a single spatial mode and are applicable to mulitchannel optical recording systems is described. The CSP diode lasers are incorporated in ten-array geometry, and each array is 1.95 nm in width and 100 microns in thickness and is cleaved to have a cavity length of 200 microns and coated to produce 90-percent reflectivity on the back facet and 10-percent reflectivity on the front facet. The array is attached to a thermoelectrically cooled submount. The optical output power versus input current characteristics for the array are evaluated, and the lateral far-field intensity profiles for each of the lasers (at 30 mW CW) and CW spectra of the lasers are analyzed.

Free-flying experiment to measure the Schawlow-Townes linewidth limit of a 300 THz laser oscillator

NASA Technical Reports Server (NTRS)

Byer, R. L.; Byvik, C. E.

1988-01-01

Recent advances in laser diode-pumped solid state laser sources permit the design and testing of laser sources with linewidths that approach the Schawlow-Townes limit of 1 Hz/mW of output power. Laser diode pumped solid state ring oscillators have been operated with CW output power levels of 25 mW at electrical efficiencies that exceed 6 percent. These oscillators are expected to operate for lifetimes that approach those of the laser diode sources which is now approaching 20,000 hours. The efficiency and lifetime of these narrow linewidth laser sources will enable space measurements of gravity waves, remote sensing applications (including local range rate and measurements), and laser sources for frequency and time standards. A free-flight experiment, 'SUNLITE', is being designed to measure the linewidth of this all-solid-state laser system.

Research and development for improved lead-salt diode lasers

NASA Technical Reports Server (NTRS)

Butler, J. F.

1976-01-01

A substantial increase in output power levels for lead-salt diode lasers, through the development of improved fabrication methods, as demonstrated. The goal of 1 mW of CW, single-mode, single-ended power output, was achieved, with exceptional devices exhibiting values greater than 8 mW. It was found that the current tuning rate could be controlled by adjusting the p-n junction depth, allowing the tuning rate to be optimized for particular applications. An unexpected phenomenon was encountered when crystal composition was observed to be significantly altered by annealing at temperatures as low as 600 C; the composition was changed by transport of material through the vapor phase. This effect caused problems in obtaining diode lasers with the desired operating characteristics. It was discovered that the present packaging method introduces gross damaging effects in the laser crystal through pressure applied by the C-bend.

Construction and Characterization of External Cavity Diode Lasers for Atomic Physics

PubMed Central

Hardman, Kyle S.; Bennetts, Shayne; Debs, John E.; Kuhn, Carlos C. N.; McDonald, Gordon D.; Robins, Nick

2014-01-01

Since their development in the late 1980s, cheap, reliable external cavity diode lasers (ECDLs) have replaced complex and expensive traditional dye and Titanium Sapphire lasers as the workhorse laser of atomic physics labs1,2. Their versatility and prolific use throughout atomic physics in applications such as absorption spectroscopy and laser cooling1,2 makes it imperative for incoming students to gain a firm practical understanding of these lasers. This publication builds upon the seminal work by Wieman3, updating components, and providing a video tutorial. The setup, frequency locking and performance characterization of an ECDL will be described. Discussion of component selection and proper mounting of both diodes and gratings, the factors affecting mode selection within the cavity, proper alignment for optimal external feedback, optics setup for coarse and fine frequency sensitive measurements, a brief overview of laser locking techniques, and laser linewidth measurements are included. PMID:24796259

Plasmon-enhanced Electrically Light-emitting from ZnO Nanorod Arrays/p-GaN Heterostructure Devices

PubMed Central

Lu, Junfeng; Shi, Zengliang; Wang, Yueyue; Lin, Yi; Zhu, Qiuxiang; Tian, Zhengshan; Dai, Jun; Wang, Shufeng; Xu, Chunxiang

2016-01-01

Effective and bright light-emitting-diodes (LEDs) have attracted broad interests in fundamental research and industrial application, especially on short wavelength LEDs. In this paper, a well aligned ZnO nanorod arrays grown on the p-GaN substrate to form a heterostructured light-emitting diode and Al nanoparticles (NPs) were decorated to improve the electroluminescence performance. More than 30-folds enhancement of the electroluminescence intensity was obtained compared with the device without Al NPs decoration. The investigation on the stable and transient photoluminescence spectraof the ZnO nanorod arrays before and after Al NPs decoration demonstrated that the metal surface plasmon resonance coupling with excitons of ZnO leads to the enhancement of the internal quantum efficiency (IQE). Our results provide aneffective approach to design novel optoelectronic devices such as light-emitting diodes and plasmonic nanolasers. PMID:27181337

A temperature, pH and sugar triple-stimuli-responsive nanofluidic diode.

PubMed

Zheng, Yu-Bin; Zhao, Shuang; Cao, Shuo-Hui; Cai, Sheng-Lin; Cai, Xiu-Hong; Li, Yao-Qun

2017-01-07

In this article, we have demonstrated for the first time a triple stimuli-responsive nanofluidic diode that can rectify ionic current under multiple external stimuli including temperature, pH, and sugar. This diode was fabricated by immobilizing poly[2-(dimethylamino)ethyl methacrylate]-co-[4-vinyl phenylboronic acid] (P(DMAEMA-co-VPBA)) onto the wall of a single glass conical nanopore channel via surface-initiator atom transfer radical polymerization (SI-ATRP). The copolymer brushes contain functional groups sensitive to pH, temperature and sugar that can induce charge and configuration change to affect the status of the pore wall. The experimental results confirmed that the P(DMAEMA-co-VPBA) brush modified nanochannel regulated the ionic current rectification successfully under three different external stimuli. This biomimetically inspired research simulates the complex biological multi-functions of ion channels and promotes the development of "smart" biomimetic nanochannel systems for actuating and sensing applications.

CURRENT-VOLTAGE CHARACTERISTICS OF THERMALLY ANNEALED Ni/n-GaAs SCHOTTKY CONTACTS

NASA Astrophysics Data System (ADS)

Yildirim, Nezir; Turut, Abdulmecit; Dogan, Hulya

The Schottky barrier type Ni/n-GaAs contacts fabricated by us were thermally annealed at 600∘C and 700∘C for 1min. The apparent barrier height Φap and ideality factor of the diodes were calculated from the forward bias current-voltage characteristic in 60-320K range. The Φap values for the nonannealed and 600∘C and 700∘C annealed diodes were obtained as 0.80, 0.81 and 0.67eV at 300K, respectively. Thus, it has been concluded that the reduced barrier due to the thermal annealing at 700∘C promises some device applications. The current preferentially flows through the lowest barrier height (BH) with the temperature due to the BH inhomogeneities. Therefore, it was seen that the Φap versus (2kT)‑1 plots for the nonannealed and annealed diodes showed the linear behavior according to Gaussian distributions.

Charge Transport in 2D DNA Tunnel Junction Diodes.

PubMed

Yoon, Minho; Min, Sung-Wook; Dugasani, Sreekantha Reddy; Lee, Yong Uk; Oh, Min Suk; Anthopoulos, Thomas D; Park, Sung Ha; Im, Seongil

2017-12-01

Recently, deoxyribonucleic acid (DNA) is studied for electronics due to its intrinsic benefits such as its natural plenitude, biodegradability, biofunctionality, and low-cost. However, its applications are limited to passive components because of inherent insulating properties. In this report, a metal-insulator-metal tunnel diode with Au/DNA/NiO x junctions is presented. Through the self-aligning process of DNA molecules, a 2D DNA nanosheet is synthesized and used as a tunneling barrier, and semitransparent conducting oxide (NiO x ) is applied as a top electrode for resolving metal penetration issues. This molecular device successfully operates as a nonresonant tunneling diode, and temperature-variable current-voltage analysis proves that Fowler-Nordheim tunneling is a dominant conduction mechanism at the junctions. DNA-based tunneling devices appear to be promising prototypes for nanoelectronics using biomolecules. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

GaN for LED applications

NASA Technical Reports Server (NTRS)

Pankove, J. I.

1973-01-01

In order to improve the synthesis of GaN the effect of various growth and doping parameters has been studied. Although Be, Li, Mg, and Dy can be used to overcompensate native donors, the most interesting acceptor element is Zn. The emission spectrum and the luminescence efficiency depend on the growth temperature (below 800 C), on the partial pressure of the doping impurity, and on the duration of growth. Blue-green electroluminescence with a power efficiency of 0.1 percent and a brightness of 850 fL (at 0.6 mA and 22.5 V) was obtained. Some diodes allow the color of the emitted light to change by reversing the polarity of the bias. Continuous operation of a diode over a period of 5 months showed no evidence of degradation. The luminescence properties of ion-implanted GaN were studied. Delay effects were found in the electroluminescence of diodes, although, with a dc bias, a 70-MHz modulation was possible.

Portable fiber-coupled diode-laser-based sensor for multiple trace gas detection

NASA Technical Reports Server (NTRS)

Lancaster, D. G.; Richter, D.; Tittel, F. K.

1999-01-01

Tunable narrowband mid-infrared radiation from 3.25 to 4.4 micrometers is generated by a compact fiber-coupled, difference-frequency-based spectroscopic source. A 20-mW external cavity diode laser (with a tuning range from 814 to 870 nm) and a 50-mW distributed-Bragg-reflector diode-laser-seeded ytterbium-doped fiber amplifier operating at 1083 nm are difference-frequency mixed in a multi-grating, temperature-controlled periodically poled LiNbO3 crystal. A conversion efficiency of 0.44 mW/(W2cm) (corresponding to a power of approximately equal to 3 microW at 3.3 micrometers) represents the highest conversion efficiency reported for a portable device. Performance characteristics of such a sensor and its application to spectroscopic detection of CO2, N2O, H2CO, HCl, NO2, and CH4 will be reported in this work.

Manufacturing polymer light emitting diode with high luminance efficiency by solution process

NASA Astrophysics Data System (ADS)

Kim, Miyoung; Jo, SongJin; Yang, Ho Chang; Yoon, Dang Mo; Kwon, Jae-Taek; Lee, Seung-Hyun; Choi, Ju Hwan; Lee, Bum-Joo; Shin, Jin-Koog

2012-06-01

While investigating polymer light emitting diodes (polymer-LEDs) fabricated by solution process, surface roughness influences electro-optical (E-O) characteristics. We expect that E-O characteristics such as luminance and power efficiency related to surface roughness and layer thickness of emitting layer with poly-9-Vinylcarbazole. In this study, we fabricated polymer organic light emitting diodes by solution process which guarantees easy, eco-friendly and low cost manufacturing for flexible display applications. In order to obtain high luminescence efficiency, E-O characteristics of these devices by varying parameters for printing process have been investigated. Therefore, we optimized process condition for polymer-LEDs by adjusting annealing temperatures of emission, thickness of emission layer showing efficiency (10.8 cd/A) at 10 mA/cm2. We also checked wavelength dependent electroluminescence spectrum in order to find the correlation between the variation of efficiency and the thickness of the layer.

Low-pressure CVD-grown β-Ga2O3 bevel-field-plated Schottky barrier diodes

NASA Astrophysics Data System (ADS)

Joishi, Chandan; Rafique, Subrina; Xia, Zhanbo; Han, Lu; Krishnamoorthy, Sriram; Zhang, Yuewei; Lodha, Saurabh; Zhao, Hongping; Rajan, Siddharth

2018-03-01

We report (010)-oriented β-Ga2O3 bevel-field-plated mesa Schottky barrier diodes grown by low-pressure chemical vapor deposition (LPCVD) using a solid Ga precursor and O2 and SiCl4 sources. Schottky diodes with good ideality and low reverse leakage were realized on the epitaxial material. Edge termination using beveled field plates yielded a breakdown voltage of -190 V, and maximum vertical electric fields of 4.2 MV/cm in the center and 5.9 MV/cm at the edge were estimated, with extrinsic R ON of 3.9 mΩ·cm2 and extracted intrinsic R ON of 0.023 mΩ·cm2. The reported results demonstrate the high quality of homoepitaxial LPCVD-grown β-Ga2O3 thin films for vertical power electronics applications, and show that this growth method is promising for future β-Ga2O3 technology.

Plasmon-enhanced Electrically Light-emitting from ZnO Nanorod Arrays/p-GaN Heterostructure Devices.

PubMed

Lu, Junfeng; Shi, Zengliang; Wang, Yueyue; Lin, Yi; Zhu, Qiuxiang; Tian, Zhengshan; Dai, Jun; Wang, Shufeng; Xu, Chunxiang

2016-05-16

Effective and bright light-emitting-diodes (LEDs) have attracted broad interests in fundamental research and industrial application, especially on short wavelength LEDs. In this paper, a well aligned ZnO nanorod arrays grown on the p-GaN substrate to form a heterostructured light-emitting diode and Al nanoparticles (NPs) were decorated to improve the electroluminescence performance. More than 30-folds enhancement of the electroluminescence intensity was obtained compared with the device without Al NPs decoration. The investigation on the stable and transient photoluminescence spectraof the ZnO nanorod arrays before and after Al NPs decoration demonstrated that the metal surface plasmon resonance coupling with excitons of ZnO leads to the enhancement of the internal quantum efficiency (IQE). Our results provide aneffective approach to design novel optoelectronic devices such as light-emitting diodes and plasmonic nanolasers.

Optical analysis of AlGaInP laser diodes with real refractive index guided self-aligned structure

NASA Astrophysics Data System (ADS)

Xu, Yun; Zhu, Xiaopeng; Ye, Xiaojun; Kang, Xiangning; Cao, Qing; Guo, Liang; Chen, Lianghui

2004-05-01

Optical modes of AlGaInP laser diodes with real refractive index guided self-aligned (RISA) structure were analyzed theoretically on the basis of two-dimension semivectorial finite-difference methods (SV-FDMs) and the computed simulation results were presented. The eigenvalue and eigenfunction of this two-dimension waveguide were obtained and the dependence of the confinement factor and beam divergence angles in the direction of parallel and perpendicular to the pn junction on the structure parameters such as the number of quantum wells, the Al composition of the cladding layers, the ridge width, the waveguide thickness and the residual thickness of the upper P-cladding layer were investigated. The results can provide optimized structure parameters and help us design and fabricate high performance AlGaInP laser diodes with a low beam aspect ratio required for optical storage applications.

Developing a compact multiple laser diode combiner with a single fiber stub output for handheld IoT devices

NASA Astrophysics Data System (ADS)

Lee, Minseok; June, Seunghyeok; Kim, Sehwan

2018-01-01

Many biomedical applications require an efficient combination and localization of multiple discrete light sources ( e.g., fluorescence and absorbance imaging). We present a compact 6 channel combiner that couples the output of independent solid-state light sources into a single 400-μm-diameter fiber stub for handheld Internet of Things (IoT) devices. We demonstrate average coupling efficiencies > 80% for each of the 6 laser diodes installed into the prototype. The design supports the use of continuous wave and intensity-modulated laser diodes. This fiber-stub-type beam combiner could be used to construct custom multi-wavelength sources for tissue oximeters, microscopes and molecular imaging technologies. In order to validate its suitability, we applied the developed fiber-stub-type beam combiner to a multi-wavelength light source for a handheld IoT device and demonstrated its feasibility for smart healthcare through a tumor-mimicking silicon phantom.

Construction and characterization of external cavity diode lasers for atomic physics.

PubMed

Hardman, Kyle S; Bennetts, Shayne; Debs, John E; Kuhn, Carlos C N; McDonald, Gordon D; Robins, Nick

2014-04-24

Since their development in the late 1980s, cheap, reliable external cavity diode lasers (ECDLs) have replaced complex and expensive traditional dye and Titanium Sapphire lasers as the workhorse laser of atomic physics labs. Their versatility and prolific use throughout atomic physics in applications such as absorption spectroscopy and laser cooling makes it imperative for incoming students to gain a firm practical understanding of these lasers. This publication builds upon the seminal work by Wieman, updating components, and providing a video tutorial. The setup, frequency locking and performance characterization of an ECDL will be described. Discussion of component selection and proper mounting of both diodes and gratings, the factors affecting mode selection within the cavity, proper alignment for optimal external feedback, optics setup for coarse and fine frequency sensitive measurements, a brief overview of laser locking techniques, and laser linewidth measurements are included.

Development of an automated diode-laser-based multicomponent gas sensor

NASA Technical Reports Server (NTRS)

Richter, D.; Lancaster, D. G.; Tittel, F. K.

2000-01-01

The implementation and application of a portable fiber-coupled trace-gas sensor for the detection of several trace gases, including CO2, CH4, and H2CO, are reported. This particular sensor is based on a cw fiber-amplified near-infrared (distributed Bragg reflector) diode laser and an external cavity diode laser that are frequency converted in a periodically poled lithium niobate crystal to the mid-IR spectroscopic fingerprint region (3.3-4.4 micrometers). A continuous absorption spectrum of CH4 and H2CO from 3.37 to 3.10 micrometers with a spectral resolution of 40 MHz (approximately 0.0013 cm-1) demonstrated the spectral performance that can be achieved by means of automated wavelength tuning and phase matching with stepper motor control. Autonomous long-term detection of ambient CO2 and CH4 over a 3- and 7-day period was also demonstrated.

High-performance organic light-emitting diodes comprising ultrastable glass layers

PubMed Central

Rodríguez-Viejo, Javier

2018-01-01

Organic light-emitting diodes (OLEDs) are one of the key solid-state light sources for various applications including small and large displays, automotive lighting, solid-state lighting, and signage. For any given commercial application, OLEDs need to perform at their best, which is judged by their device efficiency and operational stability. We present OLEDs that comprise functional layers fabricated as ultrastable glasses, which represent the thermodynamically most favorable and, thus, stable molecular conformation achievable nowadays in disordered solids. For both external quantum efficiencies and LT70 lifetimes, OLEDs with four different phosphorescent emitters show >15% enhancements over their respective reference devices. The only difference to the latter is the growth condition used for ultrastable glass layers that is optimal at about 85% of the materials’ glass transition temperature. These improvements are achieved through neither material refinements nor device architecture optimization, suggesting a general applicability of this concept to maximize the OLED performance, no matter which specific materials are used. PMID:29806029

Highly ultraviolet transparent textured indium tin oxide thin films and the application in light emitting diodes

NASA Astrophysics Data System (ADS)

Chen, Zimin; Zhuo, Yi; Tu, Wenbin; Ma, Xuejin; Pei, Yanli; Wang, Chengxin; Wang, Gang

2017-06-01

Various kinds of materials have been developed as transparent conductors for applications in semiconductor optoelectronic devices. However, there is a bottleneck that transparent conductive materials lose their transparency at ultraviolet (UV) wavelengths and could not meet the demands for commercial UV device applications. In this work, textured indium tin oxide (ITO) is grown and its potential to be used at UV wavelengths is explored. It is observed that the pronounced Burstein-Moss effect could widen the optical bandgap of the textured ITO to 4.7 eV. The average transmittance in UVA (315 nm-400 nm) and UVB (280 nm-315 nm) ranges is as high as 94% and 74%, respectively. The excellent optical property of textured ITO is attributed to its unique structural property. The compatibility of textured ITO thin films to the device fabrication is demonstrated on 368-nm nitride-based light emitting diodes, and the enhancement of light output power by 14.8% is observed compared to sputtered ITO.

Current laser applications in reconstructive microsurgery: A review of the literature.

PubMed

Leclère, Franck Marie; Vogt, Peter; Schoofs, Michel; Delattre, Maryline; Mordon, Serge

2016-06-01

Microvascular surgery has become an important method for reconstructing surgical defects following trauma, tumor resection, or burns. Laser-assisted microanastomoses (LAMA) were introduced by Jain in 1979 in order to help the microsurgeon reduce both operating time and complications. This article reviews the literature on clinical applications of LAMA. A Medline literature search was performed and cross-referenced. Articles between 1979 and 2014 were included. Keywords used were laser, laser microanastomoses, laser microanastomosis, LAMA, and microsurgery. Only seven clinical studies using three different wavelengths were found in the literature: 1,064 nm (Nd: YAG), 10,600 nm (CO2), 514 nm (Argon), and 1,950 nm (Diode). Clinical outcomes, type of procedures, laser wavelength and parameters, and possible wider applications in the operating room are discussed in each case. The success rate for reconstructive free flap surgery and hand surgery achieved with LAMA appears promising. In particular, use of the 1950-nm diode laser for microsurgery is likely to increase in the near future.