Dynamic structural colour using vanadium dioxide thin films

NASA Astrophysics Data System (ADS)

Wilson, K.; Marocico, C. A.; Bradley, A. L.

2018-06-01

A thin film stack consisting of layers of indium tin oxide (ITO) with an intermediate vanadium oxide (VO2) layer on an optically thick silver film has been investigated for dynamic structural colour. The structure benefits from the phase change properties of VO2. Compared with other phase change materials, such as germanium antimony telluride (GST), VO2 can be offered as a lower power consumption alternative. It has been overlooked in the visible spectral range due to its smaller refractive index change below 700 nm. We demonstrate that the sensitivity of the visible reflectance spectrum to the change in phase of a 30 nm VO2 layer is increased after it is incorporated in a thin film stack, with performance comparable to other phase change materials. The extent to which dynamic tuning of the reflectance spectra of ITO–VO2–ITO–Ag thin film stacks can be exploited for colour switching is reported, with approximately 25% change in reflectance demonstrated at 550 nm. Inclusion of a top ITO layer is also shown to improve the chromaticity change on phase transition.

Phase-selective vanadium dioxide (VO{sub 2}) nanostructured thin films by pulsed laser deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Masina, B. N., E-mail: BMasina@csir.co.za, E-mail: slafane@cdta.dz; School of Physics, University of KwaZulu-Natal, Private Bag X54001, Durban 4000; Lafane, S., E-mail: BMasina@csir.co.za, E-mail: slafane@cdta.dz

2015-10-28

Thin films of monoclinic nanostructured vanadium dioxide are notoriously difficult to produce in a selective manner. To date, post-annealing, after pulsed laser deposition (PLD), has been used to revert the crystal phase or to remove impurities, and non-glass substrates have been employed, thus reducing the efficacy of the transparency switching. Here, we overcome these limitations in PLD by optimizing a laser-ablation and deposition process through optical imaging of the laser-induced plasma. We report high quality monoclinic rutile-type vanadium dioxide (VO{sub 2}) (M1) nanoparticles without post-annealing, and on a glass substrate. Our samples demonstrate a reversible metal-to-insulator transition at ∼43 °C, withoutmore » any doping, paving the way to switchable transparency in optical materials at room temperature.« less

Vanadium dioxide thin films prepared on silicon by low temperature MBE growth and ex-situ annealing

NASA Astrophysics Data System (ADS)

Homm, Pia; van Bilzen, Bart; Menghini, Mariela; Locquet, Jean-Pierre; Ivanova, Todora; Sanchez, Luis; Sanchis, Pablo

Vanadium dioxide (VO2) is a material that shows an insulator to metal transition (IMT) near room temperature. This property can be exploited for applications in field effect devices, electro-optical switches and nonlinear circuit components. We have prepared VO2 thin films on silicon wafers by combining a low temperature MBE growth with an ex-situ annealing at high temperature. We investigated the structural, electrical and optical characteristics of films with thicknesses ranging from 10 to 100 nm. We have also studied the influence of the substrate cleaning. The films grown with our method are polycrystalline with a preferred orientation in the (011) direction of the monoclinic phase. For the films produced on silicon with a native oxide, an IMT at around 75 °C is observed. The magnitude of the resistance change across the IMT decreases with thickness while the refractive index at room temperature corresponds with values reported in the literature for thin films. The successful growth of VO2 films on silicon with good electrical and optical properties is an important step towards the integration of VO2 in novel devices. The authors acknowledge financial support from the FWO project G052010N10 and EU-FP7 SITOGA project. PH acknowledges support from Becas Chile - CONICYT.

Control of the metal-insulator transition in vanadium dioxide by modifying orbital occupancy

NASA Astrophysics Data System (ADS)

Aetukuri, Nagaphani B.; Gray, Alexander X.; Drouard, Marc; Cossale, Matteo; Gao, Li; Reid, Alexander H.; Kukreja, Roopali; Ohldag, Hendrik; Jenkins, Catherine A.; Arenholz, Elke; Roche, Kevin P.; Dürr, Hermann A.; Samant, Mahesh G.; Parkin, Stuart S. P.

2013-10-01

External control of the conductivity of correlated oxides is one of the most promising schemes for realizing energy-efficient electronic devices. Vanadium dioxide (VO2), an archetypal correlated oxide compound, undergoes a temperature-driven metal-insulator transition near room temperature with a concomitant change in crystal symmetry. Here, we show that the metal-insulator transition temperature of thin VO2(001) films can be changed continuously from ~285 to ~345K by varying the thickness of the RuO2 buffer layer (resulting in different epitaxial strains). Using strain-, polarization- and temperature-dependent X-ray absorption spectroscopy, in combination with X-ray diffraction and electronic transport measurements, we demonstrate that the transition temperature and the structural distortion across the transition depend on the orbital occupancy in the metallic state. Our findings open up the possibility of controlling the conductivity in atomically thin VO2 layers by manipulating the orbital occupancy by, for example, heterostructural engineering.

Fabrication of VO2 thin film by rapid thermal annealing in oxygen atmosphere and its metal—insulator phase transition properties

NASA Astrophysics Data System (ADS)

Liang, Ji-Ran; Wu, Mai-Jun; Hu, Ming; Liu, Jian; Zhu, Nai-Wei; Xia, Xiao-Xu; Chen, Hong-Da

2014-07-01

Vanadium dioxide thin films have been fabricated through sputtering vanadium thin films and rapid thermal annealing in oxygen. The microstructure and the metal—insulator transition properties of the vanadium dioxide thin films were investigated by X-ray diffraction, X-ray photoelectron spectroscopy, and a spectrometer. It is found that the preferred orientation of the vanadium dioxide changes from (1¯11) to (011) with increasing thickness of the vanadium thin film after rapid thermal annealing. The vanadium dioxide thin films exhibit an obvious metal—insulator transition with increasing temperature, and the phase transition temperature decreases as the film thickness increases. The transition shows hysteretic behaviors, and the hysteresis width decreases as the film thickness increases due to the higher concentration carriers resulted from the uncompleted lattice. The fabrication of vanadium dioxide thin films with higher concentration carriers will facilitate the nature study of the metal—insulator transition.

Elevated transition temperature in Ge doped VO2 thin films

NASA Astrophysics Data System (ADS)

Krammer, Anna; Magrez, Arnaud; Vitale, Wolfgang A.; Mocny, Piotr; Jeanneret, Patrick; Guibert, Edouard; Whitlow, Harry J.; Ionescu, Adrian M.; Schüler, Andreas

2017-07-01

Thermochromic GexV1-xO2+y thin films have been deposited on Si (100) substrates by means of reactive magnetron sputtering. The films were then characterized by Rutherford backscattering spectrometry (RBS), four-point probe electrical resistivity measurements, X-ray diffraction, and atomic force microscopy. From the temperature dependent resistivity measurements, the effect of Ge doping on the semiconductor-to-metal phase transition in vanadium oxide thin films was investigated. The transition temperature was shown to increase significantly upon Ge doping (˜95 °C), while the hysteresis width and resistivity contrast gradually decreased. The precise Ge concentration and the film thickness have been determined by RBS. The crystallinity of phase-pure VO2 monoclinic films was confirmed by XRD. These findings make the use of vanadium dioxide thin films in solar and electronic device applications—where higher critical temperatures than 68 °C of pristine VO2 are needed—a viable and promising solution.

Naturally formed ultrathin V2O5 heteroepitaxial layer on VO2/sapphire(001) film

NASA Astrophysics Data System (ADS)

Littlejohn, Aaron J.; Yang, Yunbo; Lu, Zonghuan; Shin, Eunsung; Pan, KuanChang; Subramanyam, Guru; Vasilyev, Vladimir; Leedy, Kevin; Quach, Tony; Lu, Toh-Ming; Wang, Gwo-Ching

2017-10-01

Vanadium dioxide (VO2) and vanadium pentoxide (V2O5) thin films change their properties in response to external stimuli such as photons, temperature, electric field and magnetic field and have applications in electronics, optical devices, and sensors. Due to the multiple valence states of V and non-stoichiometry in thin films, it is challenging to grow epitaxial, single-phase V-oxide on a substrate, or a heterostructure of two epitaxial V-oxides. We report the formation of a heterostructure consisting of a few nm thick ultrathin V2O5 epitaxial layer on pulsed laser deposited tens of nm thick epitaxial VO2 thin films grown on single crystal Al2O3(001) substrates without post annealing of the VO2 film. The simultaneous observation of the ultrathin epitaxial V2O5 layer and VO2 epitaxial film is only possible by our unique reflection high energy electron diffraction pole figure analysis. The out-of-plane and in-plane epitaxial relationships are V2O5[100]||VO2[010]||Al2O3[001] and V2O5[03 2 bar ]||VO2[100]||Al2O3[1 1 bar 0], respectively. The existence of the V2O5 layer on the surface of the VO2 film is also supported by X-ray photoelectron spectroscopy and Raman spectroscopy.

Phase transition in bulk single crystals and thin films of V O 2 by nanoscale infrared spectroscopy and imaging

DOE PAGES

Liu, Mengkun; Sternbach, Aaron J.; Wagner, Martin; ...

2015-06-29

We have systematically studied a variety of vanadium dioxide (VO 2) crystalline forms, including bulk single crystals and oriented thin films, using infrared (IR) near-field spectroscopic imaging techniques. By measuring the IR spectroscopic responses of electrons and phonons in VO 2 with sub-grain-size spatial resolution (~20nm), we show that epitaxial strain in VO 2 thin films not only triggers spontaneous local phase separations, but leads to intermediate electronic and lattice states that are intrinsically different from those found in bulk. Generalized rules of strain- and symmetry-dependent mesoscopic phase inhomogeneity are also discussed. Furthermore, these results set the stage for amore » comprehensive understanding of complex energy landscapes that may not be readily determined by macroscopic approaches.« less

Enhanced luminous transmittance of thermochromic VO2 thin film patterned by SiO2 nanospheres

NASA Astrophysics Data System (ADS)

Zhou, Liwei; Liang, Jiran; Hu, Ming; Li, Peng; Song, Xiaolong; Zhao, Yirui; Qiang, Xiaoyong

2017-05-01

In this study, an ordered SiO2 nanosphere array coated with vanadium dioxide (VO2) has been fabricated to enhance transmittance with the potential application as an energy-efficient coating in the field of smart windows. SiO2 arrays were formed using the methods of self-assembly, and VO2 thin films were prepared by rapid thermal annealing (RTA) of sputtered vanadium films. VO2@SiO2 arrays were characterized by scanning electron microscopy, X-ray diffraction, a four-point probe, and UV-vis-NIR spectrophotometry. Compared with the planar films, the films deposited on 300 nm diameter SiO2 nanospheres can offer approximately 18% enhancement of luminous transmission (Tlum) because the diameter is smaller than the given wavelength and the protuberance of the surface array behaves as a gradation of refractive index producing antireflection. The solar regulation efficiency was not much deteriorated.

Roles of strain and domain boundaries on the phase transition stability of VO2 thin films

NASA Astrophysics Data System (ADS)

Jian, Jie; Chen, Aiping; Chen, Youxing; Zhang, Xinghang; Wang, Haiyan

2017-10-01

The fundamental phase transition mechanism and the stability of the semiconductor-to-metal phase transition properties during multiple thermal cycles have been investigated on epitaxial vanadium dioxide (VO2) thin films via both ex situ heating and in situ heating by transmission electron microscopy (TEM). VO2 thin films were deposited on c-cut sapphire substrates by pulsed laser deposition. Ex situ studies show the broadening of transition sharpness (ΔT) and the width of thermal hysteresis (ΔH) after 60 cycles. In situ TEM heating studies reveal that during thermal cycles, large strain was accumulated around the domain boundaries, which was correlated with the phase transition induced lattice constant change and the thermal expansion. It suggests that the degradation of domain boundary structures in the VO2 films not only caused the transition property reduction (e.g., the decrease in ΔT and ΔH) but also played an important role in preventing the film from fracture during thermal cycles.

Defect-mediated room temperature ferromagnetism in vanadium dioxide thin films

NASA Astrophysics Data System (ADS)

Yang, Tsung-Han; Nori, Sudhakar; Zhou, Honghui; Narayan, Jagdish

2009-09-01

High quality epitaxial undoped vanadium oxide (VO2) thin films on c-plane sapphire (0001) substrate have been grown using pulsed laser deposition technique. The as-grown films exhibited excellent structural and transport properties without requiring further annealing treatments for these oxygen-deficient oxide films. The epitaxial growth has been achieved via domain matching epitaxy, where matching of integral multiples of planes occurs across the film-substrate interface. The magnetic properties of vanadium oxide (VO2) films investigated at different temperatures in the range of 10-360 K showed significant magnetic hysteresis as well as saturation of the magnetic moment. The origin of ferromagnetic properties with an estimated Curie temperature above 500 K is discussed in the absence of magnetic impurities in VO2 thin films as determined by x-ray photoelectron spectroscopy, x-ray diffraction, and transmission electron microscopy.

Switchable vanadium dioxide (VO2) metamaterials fabricated from tungsten doped vanadia-based colloidal nanocrystals

NASA Astrophysics Data System (ADS)

Paik, Taejong; Hong, Sung-Hoon; Gordon, Thomas; Gaulding, Ashley; Kagan, Cherie; Murray, Christopher

2013-03-01

We report the fabrication of thermochromic VO2-based metamaterials using solution-processable colloidal nanocrystals. Vanadium-based nanoparticles are prepared through a non-hydrolytic reaction, resulting in stable colloidal dispersions in solution. Thermochromic nanocrystalline VO2 thin-films are prepared via rapid thermal annealing of colloidal nanoparticles coated on a variety of substrates. Nanostructured VO2 can be patterned over large areas by nanoimprint lithography. Precise control of tungsten (W) doping concentration in colloidal nanoparticles enables tuning of the phase transition temperature of the nanocrystalline VO2 thin-films. W-doped VO2 films display a sharp temperature dependent phase transition, similar to the undoped VO2 film, but at lower temperatures tunable with the doping level. By sequential coating of doped VO2 with different doping concentrations, we fabricate ?smart? multi-layered VO2 films displaying multiple phase transition temperatures within a single structure, allowing for dynamic modulation of the metal-dielectric layered structure. The optical properties programmed into the layered structure are switchable with temperature, which provides additional degrees of freedom to design tunable optical metamaterials. This work is supported by the US Office of Naval Research Multidisciplinary University Research Initiative (MURI) program grant number ONR-N00014-10-1-0942.

A metal-insulator transition study of VO 2 thin films grown on sapphire substrates

DOE PAGES

Yu, Shifeng; Wang, Shuyu; Lu, Ming; ...

2017-12-15

In this paper, vanadium thin films were deposited on sapphire substrates by DC magnetron sputtering and then oxidized in a tube furnace filled with oxygen under different temperatures and oxygen flow rates. The significant influence of the oxygen flow rate and oxidation temperature on the electrical and structural properties of the vanadium oxide thin films were investigated systematically. It shows the pure vanadium dioxide (VO 2) state can only be obtained in a very narrow temperature and oxygen flow rate range. The resistivity change during the metal-insulator transition varies from 0.2 to 4 orders of magnitude depending on the oxidationmore » condition. Large thermal hysteresis during the metal-insulator phase transition was observed during the transition compared to the results in literature. Proper oxidation conditions can significantly reduce the thermal hysteresis. Finally, the fabricated VO 2 thin films showed the potential to be applied in the development of electrical sensors and other smart devices.« less

Voltage-induced switching dynamics based on an AZO/VO2/AZO sandwiched structure

NASA Astrophysics Data System (ADS)

Xiao, Han; Li, Yi; Fang, Baoying; Wang, Xiaohua; Liu, Zhimin; Zhang, Jiao; Li, Zhengpeng; Huang, Yaqin; Pei, Jiangheng

2017-11-01

A vanadium dioxide (VO2) thin film was prepared on an Al-doped ZnO (AZO) conductive glass substrate by DC magnetron sputtering and a post-annealing process. The AZO/VO2/AZO sandwiched structure was fabricated on the VO2/AZO composite film using photolithography and a chemical etching process. The composition, microstructure and optical properties of the VO2/AZO composite film were tested. The results showed that the VO2/AZO composite film was poly-crystalline and the AZO layer did not change the preferred growth orientation of VO2. When the voltage was applied on both of the transparent conductive layers of the AZO/VO2/AZO sandwiched structure, an abrupt change in the current was observed at different temperatures. The temperature dependence of I-V characteristic curves for the AZO/VO2/AZO sandwiched structure was analyzed. The phase transition voltage value is 7.5 V at 20 °C and decreases with increasing temperature.

Flexible thermochromic window based on hybridized VO2/graphene.

PubMed

Kim, Hyeongkeun; Kim, Yena; Kim, Keun Soo; Jeong, Hu Young; Jang, A-Rang; Han, Seung Ho; Yoon, Dae Ho; Suh, Kwang S; Shin, Hyeon Suk; Kim, TaeYoung; Yang, Woo Seok

2013-07-23

Large-scale integration of vanadium dioxide (VO2) on mechanically flexible substrates is critical to the realization of flexible smart window films that can respond to environmental temperatures to modulate light transmittance. Until now, the formation of highly crystalline and stoichiometric VO2 on flexible substrate has not been demonstrated due to the high-temperature condition for VO2 growth. Here, we demonstrate a VO2-based thermochromic film with unprecedented mechanical flexibility by employing graphene as a versatile platform for VO2. The graphene effectively functions as an atomically thin, flexible, yet robust support which enables the formation of stoichiometric VO2 crystals with temperature-driven phase transition characteristics. The graphene-supported VO2 was capable of being transferred to a plastic substrate, forming a new type of flexible thermochromic film. The flexible VO2 films were then integrated into the mock-up house, exhibiting its efficient operation to reduce the in-house temperature under infrared irradiation. These results provide important progress for the fabrication of flexible thermochromic films for energy-saving windows.

Thermal aging effect of vanadyl acetylacetonate precursor for deposition of VO{sub 2} thin films with thermochromic properties

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yu, Jung-Hoon; Nam, Sang-Hun; Kim, Donguk

Highlights: • 7 day aged VO(acac){sub 2} sol shows enhanced adhesivity on the SiO{sub 2} compared with non-aged sol. • The aging process has significantly affected the morphologies of VO{sub 2} films. • From the FT-IR spectra, thermal aging process provides the deformation of precursor. • The metal insulator transition (MIT) efficiency (ΔT{sub at2000} {sub nm}) reached a maximum value of 51% at 7 day aging. • Thermal aging process could shorten the aging time of sol solution. - Abstract: Thermochromic properties of vanadium dioxide (VO{sub 2}) have been studied extensively due to their IR reflection applications in energy smartmore » windows. In this paper, we studied the optical switching property of VO{sub 2} thin film, depending on the thermal aging time of the vanadyl acetylacetonate (VO(acac){sub 2}) precursor. We found the alteration of the IR spectra of the precursor by tuning the aging time as well as heat treatments of the precursor. An aging effect of vanadium precursor directly affects the morphologies, optical switching property and crystallinity of VO{sub 2} films. The optimum condition was achieved at the 7 day aging time with metal insulator transition (MIT) efficiency of 50%.« less

Study of the resonant frequencies of silicon microcantilevers coated with vanadium dioxide films during the insulator-to-metal transition

NASA Astrophysics Data System (ADS)

Rúa, Armando; Fernández, Félix E.; Hines, Melissa A.; Sepúlveda, Nelson

2010-03-01

Vanadium dioxide (VO2) thin films were grown on silicon microcantilevers and companion test substrates by pulsed laser deposition followed by in situ annealing in an oxidizing atmosphere, with annealing times used to control crystallite sizes. Annealing times of 18 min produced VO2 films with average crystallite sizes of ˜10 nm or less, while those annealed for 35 min had crystallites of average size ˜90 nm, comparable to sample thickness. X-ray diffraction and x-ray photoelectron spectroscopy studies of the samples showed that films with crystallite sizes ˜40 nm or greater consisted of substoichiometric VO2 in its monoclinic phase, with preferential orientation with (011) planes parallel to the sample surface, while finer structured samples had a substantially similar composition, but showed no clear evidence of preferential orientation and were probably partially amorphous. Forced vibration experiments were performed with the cantilevers as they were thermally cycled through the VO2 insulator-to-metal transition (IMT). Very large reversible changes in the resonant frequencies of up to 5% (3.6 kHz) as well as hysteretic behavior were observed, which depend strongly on film crystallite size. The average value of Young's modulus for VO2 films with crystallite sizes of ˜90 nm was estimated from the mechanical resonance data at room temperature to be ˜120 GPa, but the large tensile stresses which develop between film and substrate through the IMT impede a similar determination for the VO2 tetragonal phase, since the commonly used relationships for cantilever frequencies derived from elasticity theory are not applicable for strongly curved composite beams. The results presented show that VO2 thin films can be useful in novel microscale and nanoscale electromechanical resonators in which effective stiffness can be tuned thermally or optically. This response can provide additional functionality to VO2—based devices which take advantage of other property changes through the IMT.

Bidirectional current triggering in planar devices based on serially connected VO₂ thin films using 965 nm laser diode.

PubMed

Kim, Jihoon; Park, Kyongsoo; Kim, Bong-Jun; Lee, Yong Wook

2016-08-08

By incorporating a 965 nm laser diode, the bidirectional current triggering of up to 30 mA was demonstrated in a two-terminal planar device based on serially connected vanadium dioxide (VO₂) thin films grown by pulsed laser deposition. The bidirectional current triggering was realized by using the focused beams of laser pulses through the photo-thermally induced phase transition of VO₂. The transient responses of laser-triggered currents were also investigated when laser pulses excited the device at a variety of pulse widths and repetition rates of up to 4.0 Hz. A switching contrast between off- and on-state currents was obtained as ~8333, and rising and falling times were measured as ~39 and ~29 ms, respectively, for 50 ms laser pulses.

New Insights into the Diverse Electronic Phases of a Novel Vanadium Dioxide Polymorph: A Terahertz Spectroscopy Study

PubMed Central

Lourembam, James; Srivastava, Amar; La-o-vorakiat, Chan; Rotella, H.; Venkatesan, T.; Chia, Elbert E. M.

2015-01-01

A remarkable feature of vanadium dioxide is that it can be synthesized in a number of polymorphs. The conductivity mechanism in the metastable layered polymorph VO2(B) thin films has been investigated by terahertz time-domain spectroscopy (THz-TDS). In VO2(B), a critical temperature of 240 K marks the appearance of a non-zero Drude term in the observed complex conductivity, indicating the evolution from a pure insulating state towards a metallic state. In contrast, the THz conductivity of the well-known VO2(M1) is well fitted only by a modification of the Drude model to include backscattering. We also identified two different THz conductivity regimes separated by temperature in these two polymorphs. The electronic phase diagram is constructed, revealing that the width and onset of the metal-insulator transition in the B phase develop differently from the M1 phase. PMID:25777320

Tunable VO{sub 2}/Au hyperbolic metamaterial

DOE Office of Scientific and Technical Information (OSTI.GOV)

Prayakarao, S.; Noginov, M. A., E-mail: mnoginov@nsu.edu; Mendoza, B.

2016-08-08

Vanadium dioxide (VO{sub 2}) is known to have a semiconductor-to-metal phase transition at ∼68 °C. Therefore, it can be used as a tunable component of an active metamaterial. The lamellar metamaterial studied in this work is composed of subwavelength VO{sub 2} and Au layers and is designed to undergo a temperature controlled transition from the optical hyperbolic phase to the metallic phase. VO{sub 2} films and VO{sub 2}/Au lamellar metamaterial stacks have been fabricated and studied in electrical conductivity and optical (transmission and reflection) experiments. The observed temperature-dependent changes in the reflection and transmission spectra of the metamaterials and VO{sub 2}more » thin films are in a good qualitative agreement with theoretical predictions. The demonstrated optical hyperbolic-to-metallic phase transition is a unique physical phenomenon with the potential to enable advanced control of light-matter interactions.« less

Radiation-based near-field thermal rectification with phase transition materials

NASA Astrophysics Data System (ADS)

Yang, Yue; Basu, Soumyadipta; Wang, Liping

2013-10-01

The capability of manipulating heat flow has promising applications in thermal management and thermal circuits. In this Letter, we report strong thermal rectification effect based on the near-field thermal radiation between silicon dioxide (SiO2) and a phase transition material, vanadium dioxide (VO2), separated by nanometer vacuum gaps under the framework of fluctuational electrodynamics. Strong coupling of surface phonon polaritons between SiO2 and insulating VO2 leads to enhanced near-field radiative transfer, which on the other hand is suppressed when VO2 becomes metallic, resulting in thermal rectification. The rectification factor is close to 1 when vacuum gap is at 1 μm and it increases to almost 2 at sub-20-nm gaps when emitter and receiver temperatures are set to 400 and 300 K, respectively. Replacing bulk SiO2 with a thin film of several nanometers, rectification factor of 3 can be achieved when the vacuum gap is around 100 nm.

Intensity tunable infrared broadband absorbers based on VO2 phase transition using planar layered thin films

PubMed Central

Kocer, Hasan; Butun, Serkan; Palacios, Edgar; Liu, Zizhuo; Tongay, Sefaattin; Fu, Deyi; Wang, Kevin; Wu, Junqiao; Aydin, Koray

2015-01-01

Plasmonic and metamaterial based nano/micro-structured materials enable spectrally selective resonant absorption, where the resonant bandwidth and absorption intensity can be engineered by controlling the size and geometry of nanostructures. Here, we demonstrate a simple, lithography-free approach for obtaining a resonant and dynamically tunable broadband absorber based on vanadium dioxide (VO2) phase transition. Using planar layered thin film structures, where top layer is chosen to be an ultrathin (20 nm) VO2 film, we demonstrate broadband IR light absorption tuning (from ~90% to ~30% in measured absorption) over the entire mid-wavelength infrared spectrum. Our numerical and experimental results indicate that the bandwidth of the absorption bands can be controlled by changing the dielectric spacer layer thickness. Broadband tunable absorbers can find applications in absorption filters, thermal emitters, thermophotovoltaics and sensing. PMID:26294085

Electrolysis-induced protonation of VO2 thin film transistor for the metal-insulator phase modulation

NASA Astrophysics Data System (ADS)

Katase, Takayoshi; Endo, Kenji; Ohta, Hiromichi

2016-02-01

Compared to state-of-the-art modulation techniques, protonation is the most ideal to control the electrical and optical properties of transition metal oxides (TMOs) due to its intrinsic non-volatile operation. However, the protonation of TMOs is not typically utilized for solid-state devices because of imperative high-temperature annealing treatment in hydrogen source. Although one solution for room temperature (RT) protonation of TMOs is liquid-phase electrochemistry, it is unsuited for practical purposes due to liquid-leakage problem. Herein we demonstrate solid-state RT-protonation of vanadium dioxide (VO2), which is a well-known thermochromic TMO. We fabricated the three terminal thin-film-transistor structure on an insulating VO2 film using a water-infiltrated nanoporous glass, which serves as a solid electrolyte. For gate voltage application, water electrolysis and protonation/deprotonation of VO2 film surface occurred, leading to reversible metal-insulator phase conversion of ~11-nm-thick VO2 layer. The protonation was clearly accompanied by the structural change from an insulating monoclinic to a metallic tetragonal phase. Present results offer a new route for the development of electro-optically active solid-state devices with TMO materials by engineering RT protonation.

VO 2 thin films synthesis for collaborators and various applications.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Johnson, Raegan Lynn; Clem, Paul G.

2016-11-01

Vanadium dioxide (VO 2) is an attractive material for a variety of applications due to its metal-to-insulator transition (MIT) observed at modest temperatures. This transition takes VO 2 from its low temperature insulating monoclinic phase to a high temperature (above 68°C) metallic rutile phase. This transition gives rise to a change in resistivity up to 5 orders of magnitude and a change in complex refractive index (especially at IR wavelengths), which is of interest for radar circuit protection and tunable control of infrared signature. Recently, collaborations have been initiated between CINT scientists and external university programs. The Enhanced Surveillance fundsmore » help fund this work which enabled synthesis of VO 2 films for several collaborations with internal and external researchers.« less

Plasmonic enhancement of the vanadium dioxide phase transition induced by low-power laser irradiation

NASA Astrophysics Data System (ADS)

Ferrara, Davon W.; MacQuarrie, Evan R.; Diez-Blanco, Victor; Nag, Joyeeta; Kaye, Anthony B.; Haglund, Richard F.

2012-08-01

Nanocomposites consisting of gold nanoparticle (NP) arrays and vanadium dioxide (VO2) thin films are noteworthy for the tunability of both their thermal and optical properties. The localized surface plasmon resonance (LSPR) of the Au can be tuned when its dielectric environment is modulated by the semiconducting-to-metal phase transition (SMT) of the VO2; the LSPR itself can be altered by changing the shape of the NPs and the pitch of the NP array. In principle, then it should be possible to choose a combination of VO2 film and Au LSPR properties that maximizes the overall optical response of the nanocomposite. To demonstrate this effect, transient transmission measurements were conducted on lithographically fabricated arrays of Au NPs of diameter 140 nm, array spacing 350 nm, and covered with a 60 nm thick films of VO2 via pulsed laser deposition. Both Au::VO2 nanocomposites and bare VO2 film were irradiated with a shuttered 785 nm pump laser, and their optical response was probed at 1550 nm by a fixed-frequency diode laser. The Au::VO2 nanocomposite exhibited an increased effective absorption coefficient 1.5 times that of the plain film and required 37 % less laser power to induce the SMT. The time-dependent temperature rise in the film as a function of laser intensity was calculated from these measurements and compared with both analytic and finite-element models. Our results suggest that Au::VO2 nanocomposites may be useful in applications such as thermal-management coatings for energy efficient "smart" windows.

Correlation of plume dynamics and oxygen pressure with VO2 stoichiometry during pulsed laser deposition

NASA Astrophysics Data System (ADS)

Lafane, S.; Kerdja, T.; Abdelli-Messaci, S.; Khereddine, Y.; Kechouane, M.; Nemraoui, O.

2013-07-01

Vanadium dioxide thin films have been deposited on Corning glass substrates by a KrF laser ablation of V2O5 target at the laser fluence of 2 J cm-2. The substrate temperature and the target-substrate distance were set to 500 ∘C and 4 cm, respectively. X-ray diffraction analysis showed that pure VO2 is only obtained at an oxygen pressure range of 4×10-3-2×10-2 mbar. A higher optical switching contrast was obtained for the VO2 films deposited at 4×10-3-10-2 mbar. The films properties were correlated to the plume-oxygen gas interaction monitored by fast imaging of the plume.

Local probing of thermal energy transfer and conversion processes in VO2 nanostructures

NASA Astrophysics Data System (ADS)

Menges, Fabian

Nanostructures of strongly correlated materials, such as metal-insulator transition (MIT) oxides, enable unusual coupling of charge and heat transport. Hence, they provide an interesting pathway to the development of non-linear thermal devices for active heat flux control. Here, we will report the characterization of local thermal non-equilibrium processes in vanadium dioxide (VO2) thin films and single-crystalline nanobeams. Using a scanning thermal microscope and calorimetric MEMS platforms, we studied the MIT triggered by electrical currents, electrical fields, near-field thermal radiation and thermal conduction. Based on out recently introduced scanning probe thermometry method, which enables direct imaging of local Joule and Peltier effects, we quantified self-heating processes in VO2 memristors using the tip of a resistively heated scanning probe both as local sensor and nanoscopic heat source. Finally, we will report on recent approaches to build radiative thermal switches and oscillators using VO2 nanostructures. We quantified variations of near-field radiative thermal transport between silicon dioxide and VO2 down to nanoscopic gap sizes, and will discuss its implications for the development of phonon polariton based radiative thermal devices. Funding of the Swiss Federal Office of Energy under Grant Agreement No. SI/501093-01 is gratefully acknowledged.

Ultrafast electron-lattice coupling dynamics in VO2 and V2O3 thin films

NASA Astrophysics Data System (ADS)

Abreu, Elsa; Gilbert Corder, Stephanie N.; Yun, Sun Jin; Wang, Siming; Ramírez, Juan Gabriel; West, Kevin; Zhang, Jingdi; Kittiwatanakul, Salinporn; Schuller, Ivan K.; Lu, Jiwei; Wolf, Stuart A.; Kim, Hyun-Tak; Liu, Mengkun; Averitt, Richard D.

2017-09-01

Ultrafast optical pump-optical probe and optical pump-terahertz probe spectroscopy were performed on vanadium dioxide (VO2) and vanadium sesquioxide (V2O3 ) thin films over a wide temperature range. A comparison of the experimental data from these two different techniques and two different vanadium oxides, in particular a comparison of the spectral weight oscillations generated by the photoinduced longitudinal acoustic modulation, reveals the strong electron-phonon coupling that exists in both materials. The low-energy Drude response of V2O3 appears more amenable than VO2 to ultrafast strain control. Additionally, our results provide a measurement of the temperature dependence of the sound velocity in both systems, revealing a four- to fivefold increase in VO2 and a three- to fivefold increase in V2O3 across the insulator-to-metal phase transition. Our data also confirm observations of strong damping and phonon anharmonicity in the metallic phase of VO2, and suggest that a similar phenomenon might be at play in the metallic phase of V2O3 . More generally, our simple table-top approach provides relevant and detailed information about dynamical lattice properties of vanadium oxides, paving the way to similar studies in other complex materials.

Electronic structure of HxVO2 probed with in-situ spectroscopic ellipsometry

NASA Astrophysics Data System (ADS)

Kim, So Yeun; Sandilands, Luke J.; Kang, Taedong; Son, Jaeseok; Sohn, C. H.; Yoon, Hyojin; Son, Junwoo; Moon, S. J.; Noh, T. W.

Vanadium dioxide (VO2) undergoes a metal-to-insulator transition (MIT) near 340K. Despite extensive studies on this material, the role of electron-electron correlation and electron-lattice interactions in driving this MIT is still under debate. Recently, it was demonstrated that hydrogen can be reversibly absorbed into VO2 thin film without destroying the lattice framework. This H-doping allows systematic control of the electron density and lattice structure which in turn leads to a insulator (VO2) - metal (HxVO2) - insulator (HVO2) phase modulation. To better understand the phase modulation of HxVO2, we used in-situ spectroscopic ellipsometry to monitor the electronic structure during the hydrogenization process, i.e. we measured the optical conductivity of HxVO2 while varying x. Starting in the high temperature rutile metallic phase of VO2, we observed a large change in the electronic structure upon annealing in H gas at 370K: the low energy conductivity is continuously suppressed, consistent with reported DC resistivity data, while the conductivity peaks at high energy show strong changes in energy and spectral weight. The implications of our results for the MIT in HxVO2 will be discussed.

Preparation of VO2 thin film and its direct optical bit recording characteristics.

PubMed

Fukuma, M; Zembutsu, S; Miyazawa, S

1983-01-15

Vanadium dioxide (VO2) film which has nearly the same transition point as single crystal has been obtained by reactive evaporation of vanadium on glass and subsequent annealing in N2 gas. Relations between optical properties of V02 film and its preparation conditions are presented. We made optical direct bit recording on V02 film using a laser diode as the light source. The threshold recording energy and bit density are 2 mJ/cm 2 and 350 bits/mm, respectively. We also made tungsten doping to lower the V02 film transition temperature.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yu, Shifeng; Wang, Shuyu; Lu, Ming

In this paper, vanadium thin films were deposited on sapphire substrates by DC magnetron sputtering and then oxidized in a tube furnace filled with oxygen under different temperatures and oxygen flow rates. The significant influence of the oxygen flow rate and oxidation temperature on the electrical and structural properties of the vanadium oxide thin films were investigated systematically. It shows the pure vanadium dioxide (VO 2) state can only be obtained in a very narrow temperature and oxygen flow rate range. The resistivity change during the metal-insulator transition varies from 0.2 to 4 orders of magnitude depending on the oxidationmore » condition. Large thermal hysteresis during the metal-insulator phase transition was observed during the transition compared to the results in literature. Proper oxidation conditions can significantly reduce the thermal hysteresis. Finally, the fabricated VO 2 thin films showed the potential to be applied in the development of electrical sensors and other smart devices.« less

Influence of Heat Treatment Conditions on the Properties of Vanadium Oxide Thin Films for Thermochromic Applications.

PubMed

Kim, Donguk; Kwon, Samyoung; Park, Young; Boo, Jin-Hyo; Nam, Sang-Hun; Joo, Yang Tae; Kim, Minha; Lee, Jaehyeong

2016-05-01

In present work, the effects of the heat treatment on the structural, optical, and thermochromic properties of vanadium oxide films were investigated. Vanadium dioxide (VO2) thin films were deposited on glass substrate by reactive pulsed DC magnetron sputtering from a vanadium metal target in mixture atmosphere of argon and oxygen gas. Various heat treatment conditions were applied in order to evaluate their influence on the crystal phases formed, surface morphology, and optical properties. The films were characterized by an X-ray diffraction (XRD) in order to investigate the crystal structure and identify the phase change as post-annealing temperature of 500-600 degrees C for 5 minutes. Surface conditions of the obtained VO2(M) films were analyzed by field emission scanning electron microscopy (FE-SEM) and the semiconductor-metal transition (SMT) characteristics of the VO2 films were evaluate by optical spectrophotometry in the UV-VIS-NIR, controlling temperature of the films.

Microwave Tunable Metamaterial Based on Semiconductor-to-Metal Phase Transition.

PubMed

Zhang, Guanqiao; Ma, He; Lan, Chuwen; Gao, Rui; Zhou, Ji

2017-07-18

A microwave tunable metamaterial utilizing the semiconductor-to-metal transition of vanadium dioxide (VO 2 ) is proposed, experimentally demonstrated and theoretically scrutinized. Basic concept of the design involves the combination of temperature-dependent hysteresis in VO 2 with resonance induced heating, resulting in a nonlinear response to power input. A lithographically prepared gold split-rings resonator (SRR) array deposited with VO 2 thin film is fabricated. Transmission spectra analysis shows a clear manifestation of nonlinearity, involving power-dependence of resonant frequency as well as transmitted intensity at both elevated and room temperature. Simulation performed with CST Microwave Studio conforms with the findings. The concept may find applications in transmission modulation and frequency tuning devices working under microwave frequency bands.

Exploring the work function variability and structural stability of VO2(1 1 0) surface upon noble metal (Ag, Au, Pt) adsorption and incorporation

NASA Astrophysics Data System (ADS)

Chen, Lanli; Cui, Yuanyuan; Shi, Siqi; Luo, Hongjie; Gao, Yanfeng

2018-08-01

Vanadium dioxide (VO2) has attracted great attention, with scientific and technological advances over the past few decades due to its reversible metal-insulator transition at 340 K. However, the high phase transition temperature (Tc) of VO2 limits its practical applications. Our first-principles calculations show that VO2(1 1 0) surfaces with adsorbed noble metals (Ag, Au, Pt) exhibit a lower work function compared with the clean surface and further induces a lower Tc due to charge transfer from the noble metals to the VO2(1 1 0) surface. However, the work functions of the VO2(1 1 0) surfaces after the incorporation of noble metals are higher than that of the clean surface. In addition, the results of formation energies of various configurations show that the VO2(1 1 0) surface with the adsorption and incorporation of Ag is energetically more favorable than those with Au and Pt. Therefore, it may be concluded that the adsorption and incorporation of noble metals can not only tailor the work function of VO2, in turn realizing the rational tuning of Tc of VO2, but also stabilize the structures of VO2 thin films. These results provide guidance for further exploration of VO2-based optical switching devices and smart windows.

Van der Waals MoS2/VO2 heterostructure junction with tunable rectifier behavior and efficient photoresponse.

PubMed

Oliva, Nicoló; Casu, Emanuele Andrea; Yan, Chen; Krammer, Anna; Rosca, Teodor; Magrez, Arnaud; Stolichnov, Igor; Schueler, Andreas; Martin, Olivier J F; Ionescu, Adrian Mihai

2017-10-27

Junctions between n-type semiconductors of different electron affinity show rectification if the junction is abrupt enough. With the advent of 2D materials, we are able to realize thin van der Waals (vdW) heterostructures based on a large diversity of materials. In parallel, strongly correlated functional oxides have emerged, having the ability to show reversible insulator-to-metal (IMT) phase transition by collapsing their electronic bandgap under a certain external stimulus. Here, we report for the first time the electronic and optoelectronic characterization of ultra-thin n-n heterojunctions fabricated using deterministic assembly of multilayer molybdenum disulphide (MoS 2 ) on a phase transition material, vanadium dioxide (VO 2 ). The vdW MoS 2 /VO 2 heterojunction combines the excellent blocking capability of an n-n junction with a high conductivity in on-state, and it can be turned into a Schottky rectifier at high applied voltage or at temperatures higher than 68 °C, exploiting the metal state of VO 2 . We report tunable diode-like current rectification with a good diode ideality factor of 1.75 and excellent conductance swing of 120 mV/dec. Finally, we demonstrate unique tunable photosensitivity and excellent junction photoresponse in the 500/650 nm wavelength range.

Semiconductor to Metal Transition Characteristics of VO2/NiO Epitaxial Heterostructures Integrated with Si(100)

NASA Astrophysics Data System (ADS)

Molaei, Roya

The novel functionalities of Vanadium dioxide (VO2), such as, several orders of magnitude transition in resistivity and IR transmittance, provide the exciting opportunity for the development of next generation memory, sensor, and field-effect based devices. A critical issue in the development of practical devices based on metal oxides is the integration of high quality epitaxial oxide thin films with the existing silicon technology which is based on silicon (100) substrates. However, silicon is not suitable for epitaxial growth of oxides owing to its tendency to readily form an amorphous oxide layer or silicide at the film-substrate interface. The oxide films deposited directly on silicon exhibit poor crystallinity and are not suitable for device applications. To overcome this challenge, appropriate substrate templates must be developed for the growth of oxide thin films on silicon substrates. The primary objective of this dissertation was to develop an integration methodology of VO2 with Si (100) substrates so they could be used in "smart" sensor type of devices along with other multifunctional devices on the same silicon chip. This was achieved by using a NiO/c- YSZ template layer deposited in situ. It will be shown that if the deposition conditions are controlled properly. This approach was used to integrate VO 2 thin films with Si (100) substrates using pulsed laser deposition (PLD) technique. The deposition methodology of integrating VO2 thin films on silicon using various other template layers will also be discussed. Detailed epitaxial relationship of NiO/c-YSZ/Si(100) heterostructures as a template to growth of VO2 as well as were studied. We also were able to create a p-n junction within a single NiO epilayer through subsequent nanosecond laser annealing, as well as established a structure-property correlation in NiO/c-YSZ/Si(100) thin film epitaxial heterostructures with especial emphasis on the stoichiometry and crystallographic characteristics. NiO/c-YSZ/Si(100) heterostructures were used as template to grow fully relaxed VO2 thin films. The detailed x-ray diffraction, transmission electron microscopy (TEM), electrical characterization results for the deposited films will be presented. In the framework on domain matching epitaxy, epitaxial growth of VO2 (tetragonal crystal structure at growth temperature) on NiO has been explained. Our detailed phi-scan X-ray diffraction measurements corroborate our understanding of the epitaxial growth and in-plane atomic arrangements at the interface. It was observed that the transition characteristics (sharpness, over which electrical property changes are completed, amplitude, transition temperature, and hysteresis) are a strong function of microstructure, strain, and stoichiometry. We have shown that by the choosing the right template layer, strain in the VO2 thin films can be fully relaxed and near-bulk VO2 transition temperatures can be achieved. Finally, I will present my research work on modification of semiconductor-to-metal transition characteristics and effect on room temperature magnetic properties of VO2 thin films upon laser annealing. While the microstructure (epitaxy, crystalline quality etc.) and phase were preserved, we envisage these changes to occur as a result of introduction of oxygen vacancies upon laser treatment.

Effect of substrate temperature on thermochromic vanadium dioxide thin films sputtered from vanadium target

NASA Astrophysics Data System (ADS)

Madiba, I. G.; Kotsedi, L.; Ngom, B. D.; Khanyile, B. S.; Maaza, M.

2018-05-01

Vanadium dioxide films have been known as the most promising thermochromic thin films for smart windows which self-control the solar radiation and heat transfer for energy saving, comfort in houses and automotives. Such an attractive technological application is due to the fact that vanadium dioxide crystals exhibit a fast semiconductor-to-metal phase transition at a transition temperature Tc of about 68 °C, together with sharp optical changes from high transmitive to high reflective coatings in the IR spectral region. The phase transition has been associated with the nature of the microstructure, stoichiometry and stresses related to the oxide. This study reports on the effect of the crystallographic quality controlled by the substrate temperature on the thermochromic properties of vanadium dioxide thin films synthesized by reactive radio frequency inverted cylindrical magnetron sputtering from vanadium target. The reports results are based on X-ray diffraction, Atomic force microscopy, and UV-Visible spectrophotometer. The average crystalline grain size of VO2 increases with the substrate temperature, inducing stress related phenomena within the films.

Research progress of VO2 thin film as laser protecting material

NASA Astrophysics Data System (ADS)

Liu, Zhiwei; Lu, Yuan; Hou, Dianxin

2018-03-01

With the development of laser technology, the battlefield threat of directional laser weapons is becoming more and more serious. The blinding and destruction caused by laser weapons on the photoelectric equipment is an important part of the current photo-electronic warfare. The research on the defense technology of directional laser weapons based on the phase transition characteristics of VO2 thin films is an important subject. The researches of VO2 thin films are summarized based on review these points: the preparation methods of VO2 thin films, phase transition mechanism, phase transition temperature regulating, interaction between VO2 thin films and laser, and the application prospect of vo2 thin film as laser protecting material. This paper has some guiding significance for further research on the VO2 thin films in the field of defense directional laser weapons.

Reactions of vanadium dioxide molecules with acetylene: infrared spectra of VO2(η(2)-C2H2)(x) (x = 1, 2) and OV(OH)CCH in solid neon.

PubMed

Zhou, Xiaojie; Chen, Mohua; Zhou, Mingfei

2013-07-03

Reactions of vanadium dioxide molecules with acetylene have been studied by matrix isolation infrared spectroscopy. Reaction intermediates and products are identified on the basis of isotopic substitutions as well as density functional frequency calculations. Ground state vanadium dioxide molecule reacts with acetylene in forming the side-on-bonded VO2(η(2)-C2H2) and VO2(η(2)-C2H2)2 complexes spontaneously on annealing in solid neon. The VO2(η(2)-C2H2) complex is characterized to have a (2)B2 ground state with C2v symmetry, whereas the VO2(η(2)-C2H2)2 complex has a (2)A ground state with C2 symmetry. The VO2(η(2)-C2H2) and VO2(η(2)-C2H2)2 complexes are photosensitive. The VO2(η(2)-C2H2) complex rearranges to the OV(OH)CCH molecule upon UV-vis light excitation.

Influence of Nb doping on the phase transition properties of VO2 thin films prepared by ion beam co-sputtering deposition

NASA Astrophysics Data System (ADS)

Zhu, Huiqun; Li, Pengfei; Zhao, Lite; Liu, Jiahuan

2016-03-01

The Nb-doped VO2 thin films were successfully prepared on the glass substrates by ion beam co-sputtering at room temperature and post annealing under the air condition. The effects of the preparation processing and Nb doping on the thermal hysteresis loop and phase transition temperature of the VO2 thin films were analyzed by resistancetemperature measurement. The results show that Nb doping significantly changes the surface morphologies of VO2 thin films, and Nb-doped VO2 thin films exhibit VO2(002) preferred orientation growth with greatly improved crystallinity and orientation. Compared with pure VO2, the phase transition temperature of Nb-doped VO2 thin films drops to 40 ºC, and the width of thermal hysteresis loop narrows to 8 ºC. It is demonstrated that Nb-doped VO2 thin films prepared by ion beam co-sputtered at room temperature have an obvious thermal sensitive effect, and keep a good characteristic from metal to semiconductor phase transition.

Plasmonic Structures for CMOS Photonics and Control of Spontaneous Emission

DTIC Science & Technology

2013-04-01

structures; v) developed CMOS Si photonic switching device based on the vanadium dioxide ( VO2 ) phase transition. vi) also engaged in a partnership with...CMOS Si photonic switching device based on the vanadium dioxide ( VO2 ) phase transition. vii. exploring approaches to enhance spontaneous emission in...size and bandwidth, we are exploring phase-change materials and, in particular, vanadium dioxide. VO2 undergoes an insulator-to-metal phase transition

Exploratory Phase Transition-Based Switches Using Functional Oxides

DTIC Science & Technology

2011-02-02

TECHNICAL REPORT Abstract Vanadium dioxide ( VO2 ) undergoes a sharp metal-insulator transition (MIT) in the vicinity of room temperature and there is...18 The mechanisms governing metal-insulator transition (MIT) in vanadium dioxide ( VO2 ) is an intensively explored subject in condensed matter...textured vanadium dioxide films were grown on single crystal Al2O3 (0001) substrates by RF-sputtering from a VO2 target (99.5%, AJA International Inc

Characterization of nanostructured VO2 thin films grown by magnetron controlled sputtering deposition and post annealing method.

PubMed

Chen, Sihai; Lai, Jianjun; Dai, Jun; Ma, Hong; Wang, Hongchen; Yi, Xinjian

2009-12-21

By magnetron controlled sputtering system, a new nanostructured metastable monoclinic phase VO2 (B) thin film has been fabricated. The testing result shows that this nanostructured VO2 (B) thin film has high temperature coefficient of resistance (TCR) of -7%/K. Scanning electron microscopy measurement shows that the average grain diameter of the VO2 (B) crystallite is between 100 and 250 nm. After post annealed, VO2 (B) crystallite is changed into monoclinic (M) phase VO2 (M) crystallite with the average grain diameter between 20 and 50 nm. A set up of testing the thin film switching time is established. The test result shows the switching time is about 50 ms. With the nanostructured VO2 (B) and VO2 (M) thin films, optical switches and high sensitivity detectors will be presented.

Effects of V2O3 buffer layers on sputtered VO2 smart windows: Improved thermochromic properties, tunable width of hysteresis loops and enhanced durability

NASA Astrophysics Data System (ADS)

Long, Shiwei; Cao, Xun; Sun, Guangyao; Li, Ning; Chang, Tianci; Shao, Zewei; Jin, Ping

2018-05-01

Vanadium dioxide (VO2) is one of the most well-known thermochromic materials, which exhibits a notable optical change from transparent to reflecting in the infrared region upon a metal-insulator phase transition. For practical applications, VO2 thin films should be in high crystalline quality to obtain a strong solar modulation ability (ΔTsol). Meanwhile, narrow hysteresis loops and robust ambient durability are also indispensable for sensitivity and long-lived utilization, respectively. In this work, a series of high-quality V2O3/VO2 bilayer structures were grown on quartz glass substrates by reactive magnetron sputtering. Basically, the bottom V2O3 acts as the buffer layer to improve the crystallinity of the top VO2, while the VO2 serves as the thermochromic layer to guarantee the solar modulation ability for energy-saving. We observed an obvious increase in ΔTsol of 76% (from 7.5% to 13.2%) for VO2 films after introducing V2O3 buffer layers. Simultaneously, a remarkable reduction by 79% (from 21.9 °C to 4.7 °C) in width of hysteresis loop was obtained when embedding 60 nm V2O3 buffer for 60 nm VO2. In addition, VO2 with non-stoichiometry of V2O3±x buffer demonstrates a broadening hysteresis loops width, which is derived from the lattice distortion caused by lattice imperfection. Finally, durability of VO2 has been significantly improved due to positive effects of V2O3 buffer layer. Our results lead to a comprehensive enhancement in crystallinity of VO2 and shed new light on the promotion of thermochromic property by homologous oxides for VO2.

Electron and hole dynamics in the electronic and structural phase transitions of VO2

NASA Astrophysics Data System (ADS)

Haglund, Richard

2015-03-01

The ultrafast, optically induced insulator-to-metal transition (IMT) and the associated structural phase transition (SPT) in vanadium dioxide (VO2) have been studied for over a decade. However, only recently have effects due to the combined presence of electron-hole pairs and injected electrons been observed. Here we compare and contrast IMT dynamics when both hot electrons and optically excited electron-hole pairs are involved, in (1) thin films of VO2 overlaid by a thin gold foil, in which hot electrons are generated by 1.5 eV photons absorbed in the foil and accelerated through the VO2 by an applied electric field; (2) VO2 nanoparticles covered with a sparse mesh of gold nanoparticles averaging 20-30 nm in diameter in which hot electrons are generated by resonant excitation and decay of the localized surface plasmon; and (3) bare VO2 thin films excited by intense near-single-cycle THz pulses. In the first case, the IMT is driven by excitation of the bulk gold plasmon, and the SPT appears on a few-picosecond time scale. In the second case, density-functional calculations indicate that above a critical carrier density, the addition of a single electron to a 27-unit supercell drives the catastrophic collapse of the coherent phonon associated with, and leading to, the SPT. In the third case, sub-bandgap-energy photons (approximately 0.1 eV) initiate the IMT, but exhibit the same sub-100 femtosecond switching time and coherent phonon dynamics as observed when the IMT is initiated by 1.5 eV photons. This suggests that the underlying mechanism must be quite different, possibly THz-field induced interband tunneling of spatially separated electron-hole pairs. The implications of these findings for ultrafast switching in opto-electronic devices - such as hybrid VO2 silicon ring resonators - are briefly considered. Support from the National Science Foundation (DMR-1207407), the Office of Science, U.S. Department of Energy (DE-FG02-01ER45916) and the Defense Threat-Reduction Agency (HDTRA1-10-1-0047) for these studies is gratefully acknowledged.

VO2 Thermochromic Films on Quartz Glass Substrate Grown by RF-Plasma-Assisted Oxide Molecular Beam Epitaxy

PubMed Central

Zhang, Dong; Sun, Hong-Jun; Wang, Min-Huan; Miao, Li-Hua; Liu, Hong-Zhu; Zhang, Yu-Zhi; Bian, Ji-Ming

2017-01-01

Vanadium dioxide (VO2) thermochromic thin films with various thicknesses were grown on quartz glass substrates by radio frequency (RF)-plasma assisted oxide molecular beam epitaxy (O-MBE). The crystal structure, morphology and chemical stoichiometry were investigated systemically by X-ray diffraction (XRD), atomic force microscopy (AFM), Raman spectroscopy and X-ray photoelectron spectroscopy (XPS) analyses. An excellent reversible metal-to-insulator transition (MIT) characteristics accompanied by an abrupt change in both electrical resistivity and optical infrared (IR) transmittance was observed from the optimized sample. Remarkably, the transition temperature (TMIT) deduced from the resistivity-temperature curve was reasonably consistent with that obtained from the temperature-dependent IR transmittance. Based on Raman measurement and XPS analyses, the observations were interpreted in terms of residual stresses and chemical stoichiometry. This achievement will be of great benefit for practical application of VO2-based smart windows. PMID:28772673

Thermal tuning of infrared resonant absorbers based on hybrid gold-VO{sub 2} nanostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kocer, Hasan; Department of Electrical Engineering, Turkish Military Academy, 06654 Ankara; Butun, Serkan

2015-04-20

Resonant absorbers based on plasmonic materials, metamaterials, and thin films enable spectrally selective absorption filters, where absorption is maximized at the resonance wavelength. By controlling the geometrical parameters of nano/microstructures and materials' refractive indices, resonant absorbers are designed to operate at wide range of wavelengths for applications including absorption filters, thermal emitters, thermophotovoltaic devices, and sensors. However, once resonant absorbers are fabricated, it is rather challenging to control and tune the spectral absorption response. Here, we propose and demonstrate thermally tunable infrared resonant absorbers using hybrid gold-vanadium dioxide (VO{sub 2}) nanostructure arrays. Absorption intensity is tuned from 90% to 20%more » and 96% to 32% using hybrid gold-VO{sub 2} nanowire and nanodisc arrays, respectively, by heating up the absorbers above the phase transition temperature of VO{sub 2} (68 °C). Phase change materials such as VO{sub 2} deliver useful means of altering optical properties as a function of temperature. Absorbers with tunable spectral response can find applications in sensor and detector applications, in which external stimulus such as heat, electrical signal, or light results in a change in the absorption spectrum and intensity.« less

Vanadium dioxide film protected with an atomic-layer-deposited Al{sub 2}O{sub 3} thin film

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Xiao; Cao, Yunzhen, E-mail: yzhcao@mail.sic.ac.cn; Yang, Chao

2016-01-15

A VO{sub 2} film exposed to ambient air is prone to oxidation, which will degrade its thermochromic properties. In this work, the authors deposited an ultrathin Al{sub 2}O{sub 3} film with atomic layer deposition (ALD) to protect the underlying VO{sub 2} film from degradation, and then studied the morphology and crystalline structure of the films. To assess the protectiveness of the Al{sub 2}O{sub 3} capping layer, the authors performed a heating test and a damp heating test. An ultrathin 5-nm-thick ALD Al{sub 2}O{sub 3} film was sufficient to protect the underlying VO{sub 2} film heated at 350 °C. However, in amore » humid environment at prolonged durations, a thicker ALD Al{sub 2}O{sub 3} film (15 nm) was required to protect the VO{sub 2}. The authors also deposited and studied a TiO{sub 2}/Al{sub 2}O{sub 3} bilayer, which significantly improved the protectiveness of the Al{sub 2}O{sub 3} film in a humid environment.« less

Effects of gamma irradiations on reactive pulsed laser deposited vanadium dioxide thin films

NASA Astrophysics Data System (ADS)

Madiba, I. G.; Émond, N.; Chaker, M.; Thema, F. T.; Tadadjeu, S. I.; Muller, U.; Zolliker, P.; Braun, A.; Kotsedi, L.; Maaza, M.

2017-07-01

Vanadium oxide films are considered suitable coatings for various applications such as thermal protective coating of small spacecrafts because of their thermochromic properties. While in outer space, such coating will be exposed to cosmic radiations which include γ-rays. To study the effect of these γ-rays on the coating properties, we have deposited vanadium dioxide (VO2) films on silicon substrates and subjected them to extensive γ-irradiations with typical doses encountered in space missions. The prevalent crystallographic phase after irradiation remains the monoclinic VO2 phase but the films preferential orientation shifts to lower angles due to the presence of disordered regions caused by radiations. Raman spectroscopy measurements also evidences that the VO2 structure is slightly affected by gamma irradiation. Indeed, increasing the gamma rays dose locally alters the crystalline and electronic structures of the films by modifying the V-V inter-dimer distance, which in turns favours the presence of the VO2 metallic phase. From the XPS measurements of V2p and O1s core level spectra, an oxidation of vanadium from V4+ towards V5+ is revealed. The data also reveal a hydroxylation upon irradiation which is corroborated by the vanishing of a low oxidation state peak near the Fermi energy in the valence band. Our observations suggest that gamma radiations induce the formation of Frenkel pairs. Moreover, THz transmission measurements show that the long range structure of VO2 remains intact after irradiation whilst the electrical measurements evidence that the coating resistivity decreases with gamma irradiation and that their transition temperature is slightly reduced for high gamma ray doses. Even though gamma rays are only one of the sources of radiations that are encountered in space environment, these results are very promising with regards to the potential of integration of such VO2 films as a protective coating for spacecrafts.

Enhancing Modulation of Thermal Conduction in Vanadium Dioxide Thin Film by Nanostructured Nanogaps

DOE PAGES

Choe, Hwan Sung; Suh, Joonki; Ko, Changhyun; ...

2017-08-02

Efficient thermal management at the nanoscale is important for reducing energy consumption and dissipation in electronic devices, lab-on-a-chip platforms and energy harvest/conversion systems. For many of these applications, it is much desired to have a solid-state structure that reversibly switches thermal conduction with high ON/OFF ratios and at high speed. We describe design and implementation of a novel, all-solid-state thermal switching device by nanostructured phase transformation, i.e., modulation of contact pressure an d area between two poly-silicon surfaces activated by microstructural change of a vanadium dioxide (VO 2 ) thin film. Our solid-state devices demonstrate large and reversible alteration ofmore » cross-plane thermal conductance as a function of temperature, achieving a conductance ratio of at least 2.5. This new approach using nanostructured phase transformation provides new opportunities for applications that require advanced temperature and heat regulations.« less

Enhancing Modulation of Thermal Conduction in Vanadium Dioxide Thin Film by Nanostructured Nanogaps

DOE Office of Scientific and Technical Information (OSTI.GOV)

Choe, Hwan Sung; Suh, Joonki; Ko, Changhyun

Efficient thermal management at the nanoscale is important for reducing energy consumption and dissipation in electronic devices, lab-on-a-chip platforms and energy harvest/conversion systems. For many of these applications, it is much desired to have a solid-state structure that reversibly switches thermal conduction with high ON/OFF ratios and at high speed. We describe design and implementation of a novel, all-solid-state thermal switching device by nanostructured phase transformation, i.e., modulation of contact pressure an d area between two poly-silicon surfaces activated by microstructural change of a vanadium dioxide (VO 2 ) thin film. Our solid-state devices demonstrate large and reversible alteration ofmore » cross-plane thermal conductance as a function of temperature, achieving a conductance ratio of at least 2.5. This new approach using nanostructured phase transformation provides new opportunities for applications that require advanced temperature and heat regulations.« less

Matching characteristics of different buffer layers with VO2 thin films

NASA Astrophysics Data System (ADS)

Yang, Kai; Zhang, Dongping; Liu, Yi; Guan, Tianrui; Qin, Xiaonan; Zhong, Aihua; Cai, Xingmin; Fan, Ping; Lv, Weizhong

2016-10-01

VO2 thin films were fabricated by reactive DC magnetron sputtering on different buffer layers of MgF2, Al2O3 and TiO2, respectively. The crystallinity and orientation relationship, thickness of VO2 thin films, atoms vibrational modes, optical and electrical property, surface morphology of films were characterized by X-ray diffraction, Raman scattering microscopy, step profiler, spectrophotometer, four-probe technique, and scanning electron microscopy, respectively. XRD results investigated that the films have preferential crystalline planes VO2 (011). The crystallinity of VO2 films grown on TiO2 buffer layers are superior to VO2 directly deposited on soda-lime glass. The Raman bands of the VO2 films correspond to an Ag symmetry mode of VO2 (M). The sample prepared on 100nm TiO2 buffer layer appears nanorods structure, and exhibits remarkable solar energy modulation ability as high as 5.82% in full spectrum and 23% in near infrared spectrum. Cross-sectional SEM image of the thin films samples indicate that MgF2 buffer layer has clear interface with VO2 layer. But there are serious interdiffusion phenomenons between Al2O3, TiO2 buffer layer with VO2 layer.

Improved photoelectrochemical performance of BiVO4/MoO3 heterostructure thin films

NASA Astrophysics Data System (ADS)

Kodan, Nisha; Mehta, B. R.

2018-05-01

Bismuth vanadate (BiVO4) and Molybdenum trioxide (MoO3) thin films have been prepared by RF sputtering technique. BiVO4 thin films were deposited on indium doped tin oxide (In: SnO2; ITO) substrates at room temperature and 80W applied rf power. The prepared BiVO4 thin films were further annealed at 450°C for 2 hours in air to obtain crystalline monoclinic phase and successively coated with MoO3 thin films deposited at 150W rf power and 400°C for 30 minutes. The effect of coupling BiVO4 and MoO3 on the structural, optical and photoelectrochemical (PEC) properties have been studied. Optical studies reveal that coupling of BiVO4 and MoO3 results in improvement of optical absorption in visible region of solar spectrum. PEC study shows approximate 3-fold and 38-fold increment in photocurrent values of BiVO4/MoO3 (0.38 mA/cm2) heterostructure thin film as compared to MoO3 (0.15 mA/cm2) and BiVO4 (10 µA/cm2) thin films at applied bias of 1 V vs Ag/AgCl in 0.5 M Na2SO4 (pH=7) electrolyte.

Suspended sub-50 nm vanadium dioxide membrane transistors: fabrication and ionic liquid gating studies

NASA Astrophysics Data System (ADS)

Sim, Jai S.; Zhou, You; Ramanathan, Shriram

2012-10-01

We demonstrate a robust lithographic patterning method to fabricate self-supported sub-50 nm VO2 membranes that undergo a phase transition. Utilizing such self-supported membranes, we directly observed a shift in the metal-insulator transition temperature arising from stress relaxation and consistent opening of the hysteresis. Electric double layer transistors were then fabricated with the membranes and compared to thin film devices. The ionic liquid allowed reversible modulation of channel resistance and distinguishing bulk processes from the surface effects. From the shift in the metal-insulator transition temperature, the carrier density doped through electrolyte gating is estimated to be 1 × 1020 cm-3. Hydrogen annealing studies showed little difference in resistivity between the film and the membrane indicating rapid diffusion of hydrogen in the vanadium oxide rutile lattice consistent with previous observations. The ability to fabricate electrically-wired, suspended VO2 ultra-thin membranes creates new opportunities to study mesoscopic size effects on phase transitions and may also be of interest in sensor devices.

Effect of annealing temperature on thermochromic properties of vanadium dioxide thin films deposited by organic sol-gel method

NASA Astrophysics Data System (ADS)

Wu, Jing; Huang, Wanxia; Shi, Qiwu; Cai, Jinghan; Zhao, Dong; Zhang, Yubo; Yan, Jiazhen

2013-03-01

This paper described the synthesis of vanadium dioxide (VO2) thin films on mica substrates with different annealing temperatures by an organic sol-gel method. We performed X-ray diffraction, scanning electron microscope and optical transmission measurements to investigate the effect of the annealing temperature on the crystalline structure, morphology, and phase transition properties of these films. The results showed that a polycrystalline structure with high crystallinity and compact surface at the annealing temperature of 500 °C. The film exhibited a V6O13 phase and a flat surface with small grain size at 440 °C. By contrast, the VnO2n-1 appeared when the annealing temperature at 540 °C, and the film surface split into segregation of spherical grain and aggregates of continuously dendritic particles. Accordingly, the optimal annealing temperature was 500 °C using the organic sol-gel method. And it turned out that the films mainly contained VO2 (M) phase at room temperature with high content of V4+ valence. Particularly, the films showed different changes in the infrared transmittance and hysteresis width during the phase transition. The largest transformation of the infrared transmittance before and after MIT was 73%, while the narrowest temperature hysteresis width was 8 °C at 500 °C.

Voltage- and current-activated metal-insulator transition in VO2-based electrical switches: a lifetime operation analysis.

PubMed

Crunteanu, Aurelian; Givernaud, Julien; Leroy, Jonathan; Mardivirin, David; Champeaux, Corinne; Orlianges, Jean-Christophe; Catherinot, Alain; Blondy, Pierre

2010-12-01

Vanadium dioxide is an intensively studied material that undergoes a temperature-induced metal-insulator phase transition accompanied by a large change in electrical resistivity. Electrical switches based on this material show promising properties in terms of speed and broadband operation. The exploration of the failure behavior and reliability of such devices is very important in view of their integration in practical electronic circuits. We performed systematic lifetime investigations of two-terminal switches based on the electrical activation of the metal-insulator transition in VO 2 thin films. The devices were integrated in coplanar microwave waveguides (CPWs) in series configuration. We detected the evolution of a 10 GHz microwave signal transmitted through the CPW, modulated by the activation of the VO 2 switches in both voltage- and current-controlled modes. We demonstrated enhanced lifetime operation of current-controlled VO 2 -based switching (more than 260 million cycles without failure) compared with the voltage-activated mode (breakdown at around 16 million activation cycles). The evolution of the electrical self-oscillations of a VO 2 -based switch induced in the current-operated mode is a subtle indicator of the material properties modification and can be used to monitor its behavior under various external stresses in sensor applications.

Inhomogeneity of the ultrafast insulator-to-metal transition dynamics of VO2.

PubMed

O'Callahan, Brian T; Jones, Andrew C; Hyung Park, Jae; Cobden, David H; Atkin, Joanna M; Raschke, Markus B

2015-04-21

The insulator-metal transition (IMT) of vanadium dioxide (VO2) has remained a long-standing challenge in correlated electron physics since its discovery five decades ago. Most interpretations of experimental observations have implicitly assumed a homogeneous material response. Here we reveal inhomogeneous behaviour of even individual VO2 microcrystals using pump-probe microscopy and nanoimaging. The timescales of the ultrafast IMT vary from 40±8 fs, that is, shorter than a suggested phonon bottleneck, to 200±20 fs, uncorrelated with crystal size, transition temperature and initial insulating structural phase, with average value similar to results from polycrystalline thin-film studies. In combination with the observed sensitive variations in the thermal nanodomain IMT behaviour, this suggests that the IMT is highly susceptible to local changes in, for example, doping, defects and strain. Our results suggest an electronic mechanism dominating the photoinduced IMT, but also highlight the difficulty to deduce microscopic mechanisms when the true intrinsic material response is yet unclear.

Effect of oxygen partial pressure and VO2 content on hexagonal WO3 thin films synthesized by pulsed laser deposition technique

NASA Astrophysics Data System (ADS)

Kaushal, Ajay; Kaur, Davinder

2011-06-01

We report on the effect of oxygen partial pressure and vacuum annealing on structural and optical properties of pulsed laser-deposited nanocrystalline WO3 thin films. XRD results show the hexagonal phase of deposited WO3 thin films. The crystallite size was observed to increase with increase in oxygen partial pressure. Vacuum annealing changed the transparent as-deposited WO3 thin film to deep shade of blue color which increases the optical absorption of the film. The origin of this blue color could be due to the presence of oxygen vacancies associated with tungsten ions in lower oxidation states. In addition, the effects of VO2 content on structural, electrochemical, and optical properties of (WO3)1- x (VO2) x nanocomposite thin films have also been systematically investigated. Cyclic voltammogram exhibits a modification with the appearance of an extra cathodic peak for VO2-WO3 thin film electrode with higher VO2 content ( x ≥ 0.2). Increase of VO2 content in (WO3)1- x (VO2) x films leads to red shift in optical band gap.

Transparent optically vanadium dioxide thermochromic smart film fabricated via electrospinning technique

NASA Astrophysics Data System (ADS)

Lu, Yuan; Xiao, Xiudi; Cao, Ziyi; Zhan, Yongjun; Cheng, Haoliang; Xu, Gang

2017-12-01

The monoclinic phase vanadium dioxide VO2 (M) based transparent thermochromic smart films were firstly fabricated through heat treatment of opaque VO2-based composite nanofibrous mats, which were deposited on the glass substrate via electrospinning technique. Noteworthily, the anti-oxidation property of VO2 smart film was improved due to inner distribution of VO2 in the polymethylmethacrylate (PMMA) nanofibers, and the composite mats having water contact angle of 165° determined itself good superhydrophobic property. Besides, PMMA nanofibrous mats with different polymer concentrations demonstrated changeable morphology and fiber diameter. The VO2 nanoparticles having diameter of 30-50 nm gathered and exhibited ellipse-like or belt-like structure. Additionally, the solar modulation ability of PMMA-VO2 composite smart film was 6.88% according to UV-Vis-NIR spectra. The research offered a new notion for fabricating transparent VO2 thermochromic material.

Enhancement of electrical transport modulation in epitaxial VO2 nanowire field-effect transistor

NASA Astrophysics Data System (ADS)

Tanaka, Hidekazu; Chikanari, Masashi; Kanki, Teruo

Strongly correlated system vanadium dioxide VO2 has attracted widespread concerns from researchers as an exciting electronic material, due to the many intriguing features, especially metal-insulator transition (MIT) in vicinity of room temperature. In this work, we report a diverse geometry for high sensitivity in the transport modulation. By taking advantage of nanometer scale channel, instead of thin film channels, we demonstrated the enhancement of resistance modulation by applying gate voltage. Also we designed the insulating gate, consisting of high-k material Ta2O5/organic polymer parylene-C hybrid insulator. Such as this hybrid gate dielectric would effectively reduce interface deterioration of active channel oxide and provide sufficient carrier density. Moreover, benefited from the nanometer scale channel, the VO2 nanowire-based transistor could deliver a resistance modulation ratio over 8.5%, which are about 10 folds higher than that of the film case. Furthermore, this result is explained that in spite of the stronger field distribution in the edge parts of VO2 nanowire channel yielded little carrier density, the generated mobility modulation would biquadratic increase according to Brinkman-Rice picture as new finding.

Structure and Properties of VO2 and Titanium Dioxide Based Epitaxial Heterostructures Integrated with Silicon and Sapphire Substrates

NASA Astrophysics Data System (ADS)

Bayati, Mohammad Reza

The main focus of this study was placed on structure-property correlation in TiO2 and VO2 based epitaxial heterostructures where the photochemical and electrical properties were tuned through microstructural engineering. In the framework of domain matching epitaxy, epitaxial growth of TiO2 and VO2 heterostructures on different substrates were explained. The theta-2theta and ϕ scan X-ray diffraction measurements and detailed high resolution electron microscopy studies corroborated our understanding of the epitaxial growth and the crystallographic arrangement across the interfaces. The influence of the laser and substrate variables on structural characteristics of the films was investigated using X-ray photoelectron spectroscopy, room temperature photoluminescence spectroscopy, and UV-Vis spectrophotometry. In addition, morphological studies were performed by atomic force microscopy. Photochemical properties of the heterostructures were assessed through measuring surface wettability characteristics and photocatalytic reaction rate constant of degradation of 4-chlorophenol under ultraviolet and visible irradiations. We also studied electrical properties employing 4-probe measurement technique. The effect of post treatment processes, such as vacuum annealing and laser treatment, on structure and properties was investigated as well. The role of point defects and deviation from the stoichiometry on photochemical and electrical properties was addressed. In this research, TiO2 epilayers with controlled phase structure, defect content, and crystallographic alignments were grown on sapphire and silicon substrates. Integration with silicon was achieved using cubic and tetragonal yttria-stabilized zirconia buffer layers. I was able to tune the phase structure of the TiO2 based heterostructures from pure rutile to pure anatase and establish an epitaxial relationship across the interfaces in each case. These heterostructures were used for two different purposes. First, their application in environmental remediation was taken into account. The photochemical efficiency of the samples was evaluated under ultraviolet and visible illuminations. I was able to establish a correlation between the growth conditions and the photocatalytic activity of single crystalline TiO 2 thin films. Visible-light-responsive TiO2 films were fabricated via vacuum annealing of the samples where point defects, namely oxygen vacancies and titanium interstitial, are surmised to play a critical role. An ultrafast switching was observed in wetting characteristics of the single crystalline rutile TiO2 films from a hydrophobic state to a superhydrophilic state by single pulsed excimer laser annealing. It was observed that the laser annealing almost doubles the photocatalytic efficiency of the anatase epitaxial thin films. I was able to measure the photochemical properties of the rutile and the anatase TiO2 heterostructures in a controlled way due to the single crystalline nature of the films. Second, the rutile TiO2 epilayers with different out-of-plane orientations were deposited and used as a platform for VO2 based epitaxial heterostructures with the aim of manipulating of microstructure and electrical properties of the VO 2 films. Vanadium dioxide (VO2) is an interesting material due to the abrupt change in electrical resistivity and infrared transmittance at about 68 °C. The transition temperature can be tuned through microstructural engineering. It was the idea behind using rutile TiO2 with different crystallographic orientations as a template to tune the semiconductor to metal transition characteristics of the VO2 top layer. I successfully grew VO2(001), VO2(100), and VO2(2¯01) epitaxial thin films on TiO2(100)/c-sapphire, TiO2(101)/r-sapphire, and TiO2(001)/ m-sapphire platforms, respectively. It was observed that tetragonal phase of VO2 was stabilized at lower temperatures leading to a significant decrease in the semiconductor to metal transition temperature. In other words, we were able to tune the transition temperature of the VO 2 epitaxial heterostructures. This achievement introduces the VO 2 based single crystalline heterostructures as a promising candidate for a wide range of applications where different transition temperatures are required. The epitaxial relationships were established and atomic arrangement across the interfaces was studied in detail.

Thermochromic properties of W-doped VO2 thin films deposited by aqueous sol-gel method for adaptive infrared stealth application

NASA Astrophysics Data System (ADS)

Liu, Dongqing; Cheng, Haifeng; Xing, Xin; Zhang, Chaoyang; Zheng, Wenwei

2016-07-01

The W doped VO2 thin films with various W contents were successfully deposited by aqueous sol-gel method followed by a post annealing process. The derived thin films were characterized by X-ray diffraction, Raman spectra, scanning electron microscopy and atomic force microscopy. Besides, the resistance-temperature relationship and infrared emissivity in the waveband 7.5-14 μm were analyzed, and the effects of W doping on the thermochromic properties of VO2 thin films were studied. The results show that W atoms enter the crystal lattice of VO2 and the transition temperature decreases gradually with increasing doping amount of W. The emissivity of VO2-W-4% thin films has dropped to 0.4 when its real temperature is above 30 °C. The thermal infrared images were also examined under different temperature by thermal imager. The results indicate that the temperature under which W doped VO2 thin films begin to have lower emissivity decreases gradually with increasing doping amount of W. W doped VO2 thin films can control its infrared radiation intensity actively at a lower temperature level of 30 °C, which has great application prospects in the adaptive infrared stealth technology.

The electro-optic mechanism and infrared switching dynamic of the hybrid multilayer VO2/Al:ZnO heterojunctions.

PubMed

Zhang, Peng; Zhang, Wu; Wang, Junyong; Jiang, Kai; Zhang, Jinzhong; Li, Wenwu; Wu, Jiada; Hu, Zhigao; Chu, Junhao

2017-06-30

Active and widely controllable phase transition optical materials have got rapid applications in energy-efficient electronic devices, field of meta-devices and so on. Here, we report the optical properties of the vanadium dioxide (VO 2 )/aluminum-doped zinc oxide (Al:ZnO) hybrid n-n type heterojunctions and the corresponding electro-optic performances of the devices. Various structures are fabricated to compare the discrepancy of the optical and electrical characteristics. It was found that the reflectance spectra presents the wheel phenomenon rather than increases monotonically with temperature at near-infrared region range. The strong interference effects was found in the hybrid multilayer heterojunction. In addition, the phase transition temperature decreases with increasing the number of the Al:ZnO layer, which can be ascribed to the electron injection to the VO 2 film from the Al:ZnO interface. Affected by the double layer Al:ZnO, the abnormal Raman vibration mode was presented in the insulator region. By adding the external voltage on the Al 2 O 3 /Al:ZnO/VO 2 /Al:ZnO, Al 2 O 3 /Al:ZnO/VO 2 and Al 2 O 3 /VO 2 /Al:ZnO thin-film devices, the infrared optical spectra of the devices can be real-time manipulated by an external voltage. The main effect of joule heating and assistant effect of electric field are illustrated in this work. It is believed that the results will add a more thorough understanding in the application of the VO 2 /transparent conductive film device.

Imaging Nanometer Phase Coexistence at Defects During the Insulator-Metal Phase Transformation in VO2 Thin Films by Resonant Soft X-ray Holography.

PubMed

Vidas, Luciana; Günther, Christian M; Miller, Timothy A; Pfau, Bastian; Perez-Salinas, Daniel; Martínez, Elías; Schneider, Michael; Gührs, Erik; Gargiani, Pierluigi; Valvidares, Manuel; Marvel, Robert E; Hallman, Kent A; Haglund, Richard F; Eisebitt, Stefan; Wall, Simon

2018-05-18

We use resonant soft X-ray holography to image the insulator-metal phase transition in vanadium dioxide with element and polarization specificity and nanometer spatial resolution. We observe that nanoscale inhomogeneity in the film results in spatial-dependent transition pathways between the insulating and metallic states. Additional nanoscale phases form in the vicinity of defects which are not apparent in the initial or final states of the system, which would be missed in area-integrated X-ray absorption measurements. These intermediate phases are vital to understand the phase transition in VO 2 , and our results demonstrate how resonant imaging can be used to understand the electronic properties of phase-separated correlated materials obtained by X-ray absorption.

Metal-insulator transition of valence-controlled VO2 thin film prepared by RF magnetron sputtering using oxygen radical

NASA Astrophysics Data System (ADS)

Suetsugu, Takaaki; Shimazu, Yuichi; Tsuchiya, Takashi; Kobayashi, Masaki; Minohara, Makoto; Sakai, Enju; Horiba, Koji; Kumigashira, Hiroshi; Higuchi, Tohru

2016-06-01

We have prepared b-axis-oriented VO2 thin films by RF magnetron sputtering using oxygen radicals as the reactive gas. The VO2 thin films consist of a mixed-valence V3+/V4+ state formed by oxygen vacancies. The V3+ ratio strongly depends on the film thickness and the oxygen partial pressure of the radical gun during deposition. The lattice constant of the b-axis increases and the metal-insulator transition (MIT) temperature decreases with decreasing V3+ ratio, although the VO2 thin films with a high V3+ ratio of 42% do not exhibit MIT. The bandwidths and spectral weights of V 3d a1g and \\text{e}\\text{g}σ bands at around the Fermi level, which correspond to the insulating phase at 300 K, are smaller in the VO2 thin films with a low V3+ ratio. These results indicate that the control of the mixed-valence V3+/V4+ state is important for the MIT of b-axis-oriented VO2 thin films.

Core-shell VO2@TiO2 nanorods that combine thermochromic and photocatalytic properties for application as energy-saving smart coatings

PubMed Central

Li, Yamei; Ji, Shidong; Gao, Yanfeng; Luo, Hongjie; Kanehira, Minoru

2013-01-01

Vanadium dioxide (VO2) is a Mott phase transition compound that can be applied as a thermochromic smart material for energy saving and comfort, and titanium dioxide (TiO2) is a well-known photocatalyst for self-cleaning coatings. In this paper, we report a VO2@TiO2 core-shell structure, in which the VO2 nanorod core exhibits a remarkable modulation ability for solar infrared light, and the TiO2 anatase shell exhibits significant photocatalytic degradation of organic dye. In addition, the TiO2 overcoating not only increased the luminous transmittance of VO2 based on an antireflection effect, but also modified the intrinsic colour of VO2 films from yellow to light blue. The TiO2 also enhanced the chemical stability of VO2 against oxidation. This is the first report of such a single nanoparticle structure with both thermochromic and photocatalytic properties that offer significant potential for creating a multifunctional smart coating. PMID:23546301

Core-shell VO2@TiO2 nanorods that combine thermochromic and photocatalytic properties for application as energy-saving smart coatings.

PubMed

Li, Yamei; Ji, Shidong; Gao, Yanfeng; Luo, Hongjie; Kanehira, Minoru

2013-01-01

Vanadium dioxide (VO2) is a Mott phase transition compound that can be applied as a thermochromic smart material for energy saving and comfort, and titanium dioxide (TiO2) is a well-known photocatalyst for self-cleaning coatings. In this paper, we report a VO2@TiO2 core-shell structure, in which the VO2 nanorod core exhibits a remarkable modulation ability for solar infrared light, and the TiO2 anatase shell exhibits significant photocatalytic degradation of organic dye. In addition, the TiO2 overcoating not only increased the luminous transmittance of VO2 based on an antireflection effect, but also modified the intrinsic colour of VO2 films from yellow to light blue. The TiO2 also enhanced the chemical stability of VO2 against oxidation. This is the first report of such a single nanoparticle structure with both thermochromic and photocatalytic properties that offer significant potential for creating a multifunctional smart coating.

Effect of W addition on the electrical switching of VO{sub 2} thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rajeswaran, Bharathi, E-mail: rajeswaran.bharathi@gmail.com, E-mail: rbharathi@mrc.iisc.ernet.in; Umarji, Arun M.

2016-03-15

Vanadium Oxide has been a frontrunner in the field of oxide electronics because of its metal-insulator transition (MIT). The interplay of different structures of VO{sub 2} has played a crucial role in deciding the magnitude of the first order MIT. Substitution doping has been found to introduce different polymorphs of VO{sub 2}. Hence the role of substitution doping in stabilizing the competing phases of VO{sub 2} in the thin film form remains underexplored. Consequently there have been reports both discounting and approving such a stabilization of competing phases in VO{sub 2}. It is reported in the literature that the bandwidthmore » of the hysteresis and transition temperature of VO{sub 2} can be tuned by substitutional doping of VO{sub 2} with W. In this work, we have adopted a novel technique called, Ultrasonic Nebulized Spray Pyrolysis of Aqueous Combustion Mixture (UNSPACM) to deposit VO{sub 2} and W- doped VO{sub 2} as thin films. XRD and Raman spectroscopy were used to investigate the role of tungsten on the structure of VO{sub 2} thin films. Morphology of the thin films was found to be consisting of globular and porous nanoparticles of size ∼ 20 nm. Transition temperature decreased with the addition of W. We found that for 2.0 at % W doping in VO{sub 2}, the transition temperature has reduced from 68 {sup o} C to 25 {sup o} C. It is noted that W-doping in the process of reducing the transition temperature, alters the local structure and also increases room temperature carrier concentration.« less

Thermochromic VO2 thin films: solution-based processing, improved optical properties, and lowered phase transformation temperature.

PubMed

Zhang, Zongtao; Gao, Yanfeng; Chen, Zhang; Du, Jing; Cao, Chuanxiang; Kang, Litao; Luo, Hongjie

2010-07-06

This paper describes a solution-phase synthesis of high-quality vanadium dioxide thermochromic thin films. The films obtained showed excellent visible transparency and a large change in transmittance at near-infrared (NIR) wavelengths before and after the metal-insulator phase transition (MIPT). For a 59 nm thick single-layer VO(2) thin film, the integral values of visible transmittance (T(int)) for metallic (M) and semiconductive (S) states were 54.1% and 49.1%, respectively, while the NIR switching efficiencies (DeltaT) were as high as 50% at 2000 nm. Thinner films can provide much higher transmittance of visible light, but they suffer from an attenuation of the switching efficiency in the near-infrared region. By varying the film thickness, ultrahigh T(int) values of 75.2% and 75.7% for the M and S states, respectively, were obtained, while the DeltaT at 2000 nm remained high. These results represent the best data for VO(2) to date. Thicker films in an optimized range can give enhanced NIR switching efficiencies and excellent NIR blocking abilities; in a particularly impressive experiment, one film provided near-zero NIR transmittance in the switched state. The thickness-dependent performance suggests that VO(2) will be of great use in the objective-specific applications. The reflectance and emissivity at the wavelength range of 2.5-25 microm before and after the MIPT were dependent on the film thickness; large contrasts were observed for relatively thick films. This work also showed that the MIPT temperature can be reduced simply by selecting the annealing temperature that induces local nonstoichiometry; a MIPT temperature as low as 42.7 degrees C was obtained by annealing the film at 440 degrees C. These properties (the high visible transmittance, the large change in infrared transmittance, and the near room-temperature MIPT) suggest that the current method is a landmark in the development of this interesting material toward applications in energy-saving smart windows.

Facile Phase Control of Multivalent Vanadium Oxide Thin Films (V2O5 and VO2) by Atomic Layer Deposition and Postdeposition Annealing.

PubMed

Song, Gwang Yeom; Oh, Chadol; Sinha, Soumyadeep; Son, Junwoo; Heo, Jaeyeong

2017-07-19

Atomic layer deposition was adopted to deposit VO x thin films using vanadyl tri-isopropoxide {VO[O(C 3 H 7 )] 3 , VTIP} and water (H 2 O) at 135 °C. The self-limiting and purge-time-dependent growth behaviors were studied by ex situ ellipsometry to determine the saturated growth conditions for atomic-layer-deposited VO x . The as-deposited films were found to be amorphous. The structural, chemical, and optical properties of the crystalline thin films with controlled phase formation were investigated after postdeposition annealing at various atmospheres and temperatures. Reducing and oxidizing atmospheres enabled the formation of pure VO 2 and V 2 O 5 phases, respectively. The possible band structures of the crystalline VO 2 and V 2 O 5 thin films were established. Furthermore, an electrochemical response and a voltage-induced insulator-to-metal transition in the vertical metal-vanadium oxide-metal device structure were observed for V 2 O 5 and VO 2 films, respectively.

Broadband planar multilayered absorbers tuned by VO2 phase transition

NASA Astrophysics Data System (ADS)

Peng, Hao; Ji, Chunhui; Lu, Lulu; Li, Zhe; Li, Haoyang; Wang, Jun; Wu, Zhiming; Jiang, Yadong; Xu, Jimmy; Liu, Zhijun

2017-08-01

The metal-insulator transition makes vanadium dioxide an attractive material for developing reconfigurable optoelectronic components. Here we report on dynamically tunable broadband absorbers consisting of planar multilayered thin films. By thermally triggering the phase transition of vanadium dioxide, the effective impedance of multilayered structures is tuned in or out of the condition of impedance matching to free-space, leading to switchable broadband absorptions. Two types of absorbers are designed and demonstrated by using either the insulating or metallic state of vanadium dioxide at the impedance matched condition. The planar multilayered absorbers exhibit tunable absorption bands over the wavelength ranges of 5-9.3 μm and 3.9-8.2 μm, respectively. A large modulation depth up to 88% is measured. The demonstrated broadband absorbance tunability is of potential interest for reconfigurable bolometric sensing, camouflaging, and modulation of mid-infrared lights.

Facile and Low-Temperature Fabrication of Thermochromic Cr2O3/VO2 Smart Coatings: Enhanced Solar Modulation Ability, High Luminous Transmittance and UV-Shielding Function.

PubMed

Chang, Tianci; Cao, Xun; Li, Ning; Long, Shiwei; Gao, Xiang; Dedon, Liv R; Sun, Guangyao; Luo, Hongjie; Jin, Ping

2017-08-09

In the pursuit of energy efficient materials, vanadium dioxide (VO 2 ) based smart coatings have gained much attention in recent years. For smart window applications, VO 2 thin films should be fabricated at low temperature to reduce the cost in commercial fabrication and solve compatibility problems. Meanwhile, thermochromic performance with high luminous transmittance and solar modulation ability, as well as effective UV shielding function has become the most important developing strategy for ideal smart windows. In this work, facile Cr 2 O 3 /VO 2 bilayer coatings on quartz glasses were designed and fabricated by magnetron sputtering at low temperatures ranging from 250 to 350 °C as compared with typical high growth temperatures (>450 °C). The bottom Cr 2 O 3 layer not only provides a structural template for the growth of VO 2 (R), but also serves as an antireflection layer for improving the luminous transmittance. It was found that the deposition of Cr 2 O 3 layer resulted in a dramatic enhancement of the solar modulation ability (56.4%) and improvement of luminous transmittance (26.4%) when compared to single-layer VO 2 coating. According to optical measurements, the Cr 2 O 3 /VO 2 bilayer structure exhibits excellent optical performances with an enhanced solar modulation ability (ΔT sol = 12.2%) and a high luminous transmittance (T lum,lt = 46.0%), which makes a good balance between ΔT sol and T lum for smart windows applications. As for UV-shielding properties, more than 95.8% UV radiation (250-400 nm) can be blocked out by the Cr 2 O 3 /VO 2 structure. In addition, the visualized energy-efficient effect was modeled by heating a beaker of water using infrared imaging method with/without a Cr 2 O 3 /VO 2 coating glass.

Sharpness and intensity modulation of the metal-insulator transition in ultrathin VO2 films by interfacial structure manipulation

NASA Astrophysics Data System (ADS)

McGee, Ryan; Goswami, Ankur; Pal, Soupitak; Schofield, Kalvin; Bukhari, Syed Asad Manzoor; Thundat, Thomas

2018-03-01

Vanadium dioxide (VO2) undergoes a structural transformation from monoclinic (insulator) to tetragonal (metallic) upon heating above 340 K, accompanied by abrupt changes to its electronic, optical, and mechanical properties. Not only is this transition scientifically intriguing, but there are also numerous applications in sensing, memory, and optoelectronics. Here we investigate the effect different substrates and the processing conditions have on the characteristics metal-insulator transition (MIT), and how the properties can be tuned for specific applications. VO2 thin films were grown on c -plane sapphire (0001) and p-type silicon <100 > by pulsed laser deposition. High-resolution x-ray diffraction along with transmission electron microscopy reveals textured epitaxial growth on sapphire by domain-matching epitaxy, while the presence of a native oxide layer on silicon prevented any preferential growth resulting in a polycrystalline film. An orientation relationship of <001 > (010)VO2||<11 ¯00 > (0001)Al 2O3 was established for VO2 grown on sapphire, while no such relationship was found for VO2 grown on silicon. Surface-energy minimization is the driving force behind grain growth, as the lowest energy VO2 plane grew on silicon, while on sapphire the desire for epitaxial growth was dominant. Polycrystallinity of films grown on silicon caused a weaker and less prominent MIT than observed on sapphire, whose MIT was higher in magnitude and steeper in slope. The position of the MIT was shown to depend on the competing effects of misfit strain and grain growth. Higher deposition temperatures caused an increase in the MIT, while compressive strain resulted in a decreased MIT.

Study on Ultrafast Photodynamics of Novel Multilayered Thin Films for Device Applications

DTIC Science & Technology

2004-07-31

study ultrafast phase-transition of VO2 thin film. This part of work was started right after the new laser installed. With better laser output...1-3]. With the purpose of combined effect that the proposed ultrafast phase-transition VO2 thin film deposited on a substrate of heavy metal...second point of focus was to study ultrafast phase-transition of VO2 thin film. This part of work was started right after the new laser installed

Optical constants, dispersion energy parameters and dielectric properties of ultra-smooth nanocrystalline BiVO4 thin films prepared by rf-magnetron sputtering

NASA Astrophysics Data System (ADS)

Sarkar, S.; Das, N. S.; Chattopadhyay, K. K.

2014-07-01

BiVO4 thin films have been prepared through radio frequency (rf) magnetron sputtering of a pre-fabricated BiVO4 target on ITO coated glass (ITO-glass) substrate and bare glass substrates. BiVO4 target material was prepared through solid-state reaction method by heating Bi2O3 and V2O5 mixture at 800 °C for 8 h. The films were characterized by X-ray diffraction, UV-Vis spectroscopy, LCR meter, field emission scanning electron microscopy, transmission electron microscopy and atomic force microscopy. BiVO4 thin films deposited on the ITO-glass substrate are much smoother compared to the thin films prepared on bare glass substrate. The rms surface roughness calculated from the AFM images comes out to be 0.74 nm and 4.2 nm for the films deposited on the ITO-glass substrate and bare glass substrate for the deposition time 150 min respectively. Optical constants and energy dispersion parameters of these extra-smooth BiVO4 thin films have been investigated in detail. Dielectric properties of the BiVO4 thin films on ITO-glass substrate were also investigated. The frequency dependence of dielectric constant of the BiVO4 thin films has been measured in the frequency range from 20 Hz to 2 MHz. It was found that the dielectric constant increased from 145 to 343 at 20 Hz as the film thickness increased from 90 nm to 145 nm (deposition time increased from 60 min to 150 min). It shows higher dielectric constant compared to the literature value of BiVO4.

Harnessing the metal-insulator transition for tunable metamaterials

NASA Astrophysics Data System (ADS)

Charipar, Nicholas A.; Charipar, Kristin M.; Kim, Heungsoo; Bingham, Nicholas S.; Suess, Ryan J.; Mathews, Scott A.; Auyeung, Raymond C. Y.; Piqué, Alberto

2017-08-01

The control of light-matter interaction through the use of subwavelength structures known as metamaterials has facilitated the ability to control electromagnetic radiation in ways not previously achievable. A plethora of passive metamaterials as well as examples of active or tunable metamaterials have been realized in recent years. However, the development of tunable metamaterials is still met with challenges due to lack of materials choices. To this end, materials that exhibit a metal-insulator transition are being explored as the active element for future metamaterials because of their characteristic abrupt change in electrical conductivity across their phase transition. The fast switching times (▵t < 100 fs) and a change in resistivity of four orders or more make vanadium dioxide (VO2) an ideal candidate for active metamaterials. It is known that the properties associated with thin film metal-insulator transition materials are strongly dependent on the growth conditions. For this work, we have studied how growth conditions (such as gas partial pressure) influence the metalinsulator transition in VO2 thin films made by pulsed laser deposition. In addition, strain engineering during the growth process has been investigated as a method to tune the metal-insulator transition temperature. Examples of both the optical and electrical transient dynamics facilitating the metal-insulator transition will be presented together with specific examples of thin film metamaterial devices.

Facile fabrication of an efficient BiVO4 thin film electrode for water splitting under visible light irradiation.

PubMed

Jia, Qingxin; Iwashina, Katsuya; Kudo, Akihiko

2012-07-17

An efficient BiVO(4) thin film electrode for overall water splitting was prepared by dipping an F-doped SnO(2) (FTO) substrate electrode in an aqueous nitric acid solution of Bi(NO(3))(3) and NH(4)VO(3), and subsequently calcining it. X-ray diffraction of the BiVO(4) thin film revealed that a photocatalytically active phase of scheelite-monoclinic BiVO(4) was obtained. Scanning electron microscopy images showed that the surface of an FTO substrate was uniformly coated with the BiVO(4) film with 300-400 nm of the thickness. The BiVO(4) thin film electrode gave an excellent anodic photocurrent with 73% of an IPCE at 420 nm at 1.0 V vs. Ag/AgCl. Modification with CoO on the BiVO(4) electrode improved the photoelectrochemical property. A photoelectrochemical cell consisting of the BiVO(4) thin film electrode with and without CoO, and a Pt counter electrode was constructed for water splitting under visible light irradiation and simulated sunlight irradiation. Photocurrent due to water splitting to form H(2) and O(2) was confirmed with applying an external bias smaller than 1.23 V that is a theoretical voltage for electrolysis of water. Water splitting without applying external bias under visible light irradiation was demonstrated using a SrTiO(3)Rh photocathode and the BiVO(4) photoanode.

Solution-processed phase-change VO(2) metamaterials from colloidal vanadium oxide (VO(x)) nanocrystals.

PubMed

Paik, Taejong; Hong, Sung-Hoon; Gaulding, E Ashley; Caglayan, Humeyra; Gordon, Thomas R; Engheta, Nader; Kagan, Cherie R; Murray, Christopher B

2014-01-28

We demonstrate thermally switchable VO2 metamaterials fabricated using solution-processable colloidal nanocrystals (NCs). Vanadium oxide (VOx) NCs are synthesized through a nonhydrolytic reaction and deposited from stable colloidal dispersions to form NC thin films. Rapid thermal annealing transforms the VOx NC thin films into monoclinic, nanocrystalline VO2 thin films that show a sharp, reversible metal-insulator phase transition. Introduction of precise concentrations of tungsten dopings into the colloidal VOx NCs enables the still sharp phase transition of the VO2 thin films to be tuned to lower temperatures as the doping level increases. We fabricate "smart", differentially doped, multilayered VO2 films to program the phase and therefore the metal-insulator behavior of constituent vertically structured layers with temperature. With increasing temperature, we tailored the optical response of multilayered films in the near-IR and IR regions from that of a strong light absorber, in a metal-insulator structure, to that of a Drude-like reflector, characteristic of a pure metallic structure. We demonstrate that nanocrystal-based nanoimprinting can be employed to pattern multilayered subwavelength nanostructures, such as three-dimensional VO2 nanopillar arrays, that exhibit plasmonic dipolar responses tunable with a temperature change.

Substrate-mediated strain effect on the role of thermal heating and electric field on metal-insulator transition in vanadium dioxide nanobeams.

PubMed

Kim, Min-Woo; Jung, Wan-Gil; Hyun-Cho; Bae, Tae-Sung; Chang, Sung-Jin; Jang, Ja-Soon; Hong, Woong-Ki; Kim, Bong-Joong

2015-06-04

Single-crystalline vanadium dioxide (VO2) nanostructures have recently attracted great attention because of their single domain metal-insulator transition (MIT) nature that differs from a bulk sample. The VO2 nanostructures can also provide new opportunities to explore, understand, and ultimately engineer MIT properties for applications of novel functional devices. Importantly, the MIT properties of the VO2 nanostructures are significantly affected by stoichiometry, doping, size effect, defects, and in particular, strain. Here, we report the effect of substrate-mediated strain on the correlative role of thermal heating and electric field on the MIT in the VO2 nanobeams by altering the strength of the substrate attachment. Our study may provide helpful information on controlling the properties of VO2 nanobeam for the device applications by changing temperature and voltage with a properly engineered strain.

Substrate-mediated strain effect on the role of thermal heating and electric field on metal-insulator transition in vanadium dioxide nanobeams

PubMed Central

Kim, Min-Woo; Jung, Wan-Gil; Hyun-Cho; Bae, Tae-Sung; Chang, Sung-Jin; Jang, Ja-Soon; Hong, Woong-Ki; Kim, Bong-Joong

2015-01-01

Single-crystalline vanadium dioxide (VO2) nanostructures have recently attracted great attention because of their single domain metal-insulator transition (MIT) nature that differs from a bulk sample. The VO2 nanostructures can also provide new opportunities to explore, understand, and ultimately engineer MIT properties for applications of novel functional devices. Importantly, the MIT properties of the VO2 nanostructures are significantly affected by stoichiometry, doping, size effect, defects, and in particular, strain. Here, we report the effect of substrate-mediated strain on the correlative role of thermal heating and electric field on the MIT in the VO2 nanobeams by altering the strength of the substrate attachment. Our study may provide helpful information on controlling the properties of VO2 nanobeam for the device applications by changing temperature and voltage with a properly engineered strain. PMID:26040637

BiVO4 thin film photoanodes grown by chemical vapor deposition.

PubMed

Alarcón-Lladó, Esther; Chen, Le; Hettick, Mark; Mashouf, Neeka; Lin, Yongjing; Javey, Ali; Ager, Joel W

2014-01-28

BiVO4 thin film photoanodes were grown by vapor transport chemical deposition on FTO/glass substrates. By controlling the flow rate, the temperatures of the Bi and V sources (Bi metal and V2O5 powder, respectively), and the temperature of the deposition zone in a two-zone furnace, single-phase monoclinic BiVO4 thin films can be obtained. The CVD-grown films produce global AM1.5 photocurrent densities up to 1 mA cm(-2) in aqueous conditions in the presence of a sacrificial reagent. Front illuminated photocatalytic performance can be improved by inserting either a SnO2 hole blocking layer and/or a thin, extrinsically Mo doped BiVO4 layer between the FTO and the CVD-grown layer. The incident photon to current efficiency (IPCE), measured under front illumination, for BiVO4 grown directly on FTO/glass is about 10% for wavelengths below 450 nm at a bias of +0.6 V vs. Ag/AgCl. For BiVO4 grown on a 40 nm SnO2/20 nm Mo-doped BiVO4 back contact, the IPCE is increased to over 40% at wavelengths below 420 nm.

Strain effect in epitaxial VO2 thin films grown on sapphire substrates using SnO2 buffer layers

NASA Astrophysics Data System (ADS)

Kim, Heungsoo; Bingham, Nicholas S.; Charipar, Nicholas A.; Piqué, Alberto

2017-10-01

Epitaxial VO2/SnO2 thin film heterostructures were deposited on m-cut sapphire substrates via pulsed laser deposition. By adjusting SnO2 (150 nm) growth conditions, we are able to control the interfacial strain between the VO2 film and SnO2 buffer layer such that the semiconductor-to-metal transition temperature (TC) of VO2 films can be tuned without diminishing the magnitude of the transition. It is shown that in-plane tensile strain and out-of-plane compressive strain of the VO2 film leads to a decrease of Tc. Interestingly, VO2 films on SnO2 buffer layers exhibit a structural phase transition from tetragonal-like VO2 to tetragonal-VO2 during the semiconductor-to-metal transition. These results suggest that the strain generated by SnO2 buffer provides an effective way for tuning the TC of VO2 films.

Fabrication of vanadium dioxide polycrystalline films with higher temperature coefficient of resistance

NASA Astrophysics Data System (ADS)

Li, Jinhua; Yuan, Ningyi; Jiang, Meiping; Kun, Li

2011-08-01

Vanadium Dioxide Polycrystalline Films with High Temperature Coefficient of Resistance(TCR) were fabricated by modified Ion Beam Enhanced Deposition(IBED) method. The TCR of the Un-doping VO2 was about -4%/K at room temperature after appropriate thermal annealing. The XRD results clearly showed that IBED polycrystalline VO2 films had a single [002] orientation of VO2(M). The TCR of 5at.%W and 7at.% Ta doped Vanadium Dioxide Polycrystalline Films were high up to -18%/K and -12%/K at room temperature, respectively. Using 7at.% Ta and 2at.% Ti co-doping, the TCR of the co-doped vanadium oxide film was -7%/K and without hysteresis during temperature increasing and decresing from 0-80°C. It should indicate that the W-doped vanadium dioxide films colud be used for high sensing IR detect and the Ta/Ti co-doped film without hysteresis is suitable for infrarid imaging application.

The effect of Argon pressure dependent V thin film on the phase transition process of (020) VO2 thin film

NASA Astrophysics Data System (ADS)

Meng, Yifan; Huang, Kang; Tang, Zhou; Xu, Xiaofeng; Tan, Zhiyong; Liu, Qian; Wang, Chunrui; Wu, Binhe; Wang, Chang; Cao, Juncheng

2018-01-01

It has been proved challenging to fabricate the single crystal orientation of VO2 thin film by a simple method. Based on chemical reaction thermodynamic and crystallization analysis theory, combined with our experimental results, we find out that when stoichiometric number of metallic V in the chemical equation is the same, the ratio of metallic V thin film surface average roughness Ra to thin film average particle diameter d decreases with the decreasing sputtering Argon pressure. Meanwhile, the oxidation reaction equilibrium constant K also decreases, which will lead to the increases of oxidation time, thereby the crystal orientation of the VO2 thin film will also become more uniform. By sputtering oxidation coupling method, metallic V thin film is deposited on c-sapphire substrate at 1 × 10-1 Pa, and then oxidized in the air with the maximum oxidation time of 65s, high oriented (020) VO2 thin film has been fabricated successfully, which exhibits ∼4.6 orders sheet resistance change across the metal-insulator transition.

Tunable assembly of vanadium dioxide nanoparticles to create porous film for energy-saving applications.

PubMed

Ding, Shangjun; Liu, Zhanqiang; Li, Dezeng; Zhao, Wei; Wang, Yaoming; Wan, Dongyun; Huang, Fuqiang

2013-03-13

Nanoparticle-assembled vanadium dioxide (VO2) films have been easily prepared with the assistance of cetyltrimethylammonium vanadate (CTAV) precursor which exhibits self-assembly properties. The obtained VO2 film has a micro/nano hierarchical porous structure, so its visible-light transmittance is significantly improved (∼25% increased compared to continuous film). The VO2 particle density as well as the film porosity can be facilely controlled by adjusting experimental parameters such as dip-coating speed. Accordingly, film optical properties can also be tuned to a large extent, in particular the visible transmittance (Tvis) and near-infrared switching efficiency (ΔTnir). These VO2 nanoparticle-assembled films prepared by this novel method provide a useful model to research the balance between Tvis and ΔTnir.

Electric field induced metal-insulator transition in VO2 thin film based on FTO/VO2/FTO structure

NASA Astrophysics Data System (ADS)

Hao, Rulong; Li, Yi; Liu, Fei; Sun, Yao; Tang, Jiayin; Chen, Peizu; Jiang, Wei; Wu, Zhengyi; Xu, Tingting; Fang, Baoying

2016-03-01

A VO2 thin film has been prepared using a DC magnetron sputtering method and annealing on an F-doped SnO2 (FTO) conductive glass substrate. The FTO/VO2/FTO structure was fabricated using photolithography and a chemical etching process. The temperature dependence of the I-V hysteresis loop for the FTO/VO2/FTO structure has been analyzed. The threshold voltage decreases with increasing temperature, with a value of 9.2 V at 20 °C. The maximum transmission modulation value of the FTO/VO2/FTO structure is 31.4% under various temperatures and voltages. Optical modulation can be realized in the structure by applying an electric field.

Controlling phase separation in vanadium dioxide thin films via substrate engineering

DOE PAGES

Gilbert Corder, Stephanie N.; Jiang, Jianjuan; Chen, Xinzhong; ...

2017-10-23

The strong electron-lattice interactions in correlated electron systems provide unique opportunities for altering the material properties with relative ease and flexibility. Here in this Rapid Communication, we use localized strain control via a focused-ion-beam patterning of TiO 2 substrates to demonstrate that one can selectively engineer the insulator-to-metal transition temperature, the fractional component of the insulating and metallic phases, and the degree of optical anisotropy down to the length scales of the intrinsic phase separation in VO 2 thin films without altering the quality of the films. The effects of localized strain control on the strongly correlated electron system aremore » directly visualized by state-of-the-art IR near-field imaging and spectroscopy techniques and x-ray microdiffraction measurements.« less

Analyzing optical properties of thin vanadium oxide films through semiconductor-to-metal phase transition using spectroscopic ellipsometry

NASA Astrophysics Data System (ADS)

Sun, Jianing; Pribil, Greg K.

2017-11-01

We investigated the optical behaviors of vanadium dioxide (VO2) films through the semiconductor-to-metal (STM) phase transition using spectroscopic ellipsometry. Correlations between film thickness and refractive index were observed resulting from the absorbing nature of these films. Simultaneously analyzing data at multiple temperatures using Kramers-Kronig consistent oscillator models help identify film thickness. Nontrivial variations in resulting optical constants were observed through STM transition. As temperature increases, a clear increase is observed in near infrared absorption due to Drude losses that accompany the transition from semiconducting to metallic phases. Thin films grown on silicon and sapphire substrate present different optical properties and thermal hysteresis due to lattice stress and compositional differences.

Characterization of pulsed laser deposition grown V2O3 converted VO2

NASA Astrophysics Data System (ADS)

Majid, Suhail; Shukla, D. K.; Rahman, F.; Gautam, Kamini; Sathe, V. G.; Choudhary, R. J.; Phase, D. M.

2016-10-01

Controllable tuning of Metal-insulator transition in VxOy thin film has been a field of extensive research. However controlled synthesis of desired Vanadium oxide phase is a challenging task. We have successfully achieved VO2 phase on Silicon substrate after post deposition annealing treatment to the PLD grown as deposited V2O3 thin films. The annealed thin film was characterized by x-ray diffraction (XRD), resistivity, Raman spectroscopy, X-ray absorption spectroscopy (XAS) and X-ray photoelectron spectroscopy (XPS) measurements. XRD confirms the crystalline nature and growth of VO2 phase in thin film. The characteristic MIT was observed from resistivity measurements and transition temperature appeared at lower value around 336 K, compared to bulk VO2. The structural transition accompanied with MIT from lower temperature monoclinic phase to higher temperature Rutile phase became evident from temperature dependent Raman measurements. Chemical state of vanadium was examined using XAS and XPS measurements which confirm the presence of +4 oxidation state of vanadium in thin film.

Epitaxial stabilization and phase instability of VO2 polymorphs

NASA Astrophysics Data System (ADS)

Lee, Shinbuhm; Ivanov, Ilia N.; Keum, Jong K.; Lee, Ho Nyung

2016-01-01

The VO2 polymorphs, i.e., VO2(A), VO2(B), VO2(M1) and VO2(R), have a wide spectrum of functionalities useful for many potential applications in information and energy technologies. However, synthesis of phase pure materials, especially in thin film forms, has been a challenging task due to the fact that the VO2 polymorphs are closely related to each other in a thermodynamic framework. Here, we report epitaxial stabilization of the VO2 polymorphs to synthesize high quality single crystalline thin films and study the phase stability of these metastable materials. We selectively deposit all the phases on various perovskite substrates with different crystallographic orientations. By investigating the phase instability, phonon modes and transport behaviours, not only do we find distinctively contrasting physical properties of the VO2 polymorphs, but that the polymorphs can be on the verge of phase transitions when heated as low as ~400 °C. Our successful epitaxy of both VO2(A) and VO2(B) phases, which are rarely studied due to the lack of phase pure materials, will open the door to the fundamental studies of VO2 polymorphs for potential applications in advanced electronic and energy devices.

Epitaxial stabilization and phase instability of VO2 polymorphs.

PubMed

Lee, Shinbuhm; Ivanov, Ilia N; Keum, Jong K; Lee, Ho Nyung

2016-01-20

The VO2 polymorphs, i.e., VO2(A), VO2(B), VO2(M1) and VO2(R), have a wide spectrum of functionalities useful for many potential applications in information and energy technologies. However, synthesis of phase pure materials, especially in thin film forms, has been a challenging task due to the fact that the VO2 polymorphs are closely related to each other in a thermodynamic framework. Here, we report epitaxial stabilization of the VO2 polymorphs to synthesize high quality single crystalline thin films and study the phase stability of these metastable materials. We selectively deposit all the phases on various perovskite substrates with different crystallographic orientations. By investigating the phase instability, phonon modes and transport behaviours, not only do we find distinctively contrasting physical properties of the VO2 polymorphs, but that the polymorphs can be on the verge of phase transitions when heated as low as ~400 °C. Our successful epitaxy of both VO2(A) and VO2(B) phases, which are rarely studied due to the lack of phase pure materials, will open the door to the fundamental studies of VO2 polymorphs for potential applications in advanced electronic and energy devices.

Epitaxial stabilization and phase instability of VO2 polymorphs

PubMed Central

Lee, Shinbuhm; Ivanov, Ilia N.; Keum, Jong K.; Lee, Ho Nyung

2016-01-01

The VO2 polymorphs, i.e., VO2(A), VO2(B), VO2(M1) and VO2(R), have a wide spectrum of functionalities useful for many potential applications in information and energy technologies. However, synthesis of phase pure materials, especially in thin film forms, has been a challenging task due to the fact that the VO2 polymorphs are closely related to each other in a thermodynamic framework. Here, we report epitaxial stabilization of the VO2 polymorphs to synthesize high quality single crystalline thin films and study the phase stability of these metastable materials. We selectively deposit all the phases on various perovskite substrates with different crystallographic orientations. By investigating the phase instability, phonon modes and transport behaviours, not only do we find distinctively contrasting physical properties of the VO2 polymorphs, but that the polymorphs can be on the verge of phase transitions when heated as low as ~400 °C. Our successful epitaxy of both VO2(A) and VO2(B) phases, which are rarely studied due to the lack of phase pure materials, will open the door to the fundamental studies of VO2 polymorphs for potential applications in advanced electronic and energy devices. PMID:26787259

Tunable multiband polarization conversion and manipulation in vanadium dioxide-based asymmetric chiral metamaterial

NASA Astrophysics Data System (ADS)

Song, Shichao; Ma, Xiaoliang; Pu, Mingbo; Li, Xiong; Zhang, Zuojun; Gao, Ping; Luo, Xiangang

2018-04-01

Tunable multiband polarization conversion and manipulation are achieved by introducing vanadium dioxide (VO2) into a planar spiral asymmetric chiral metamaterial. Numerical simulations demonstrate that when VO2 is in the insulating state, circularly polarized electromagnetic waves are emitted at two distinct resonant frequencies. When VO2 is in the metallic state, the number of resonant frequencies changes from two to four. In addition, the initial left-handed and right-handed circularly polarized transmitted waves correspondingly transform into right and left ones. Moreover, the surface current distributions are studied in order to investigate the transformation behaviors of both the insulating and metallic states.

Angle-independent VO2 Thin Film on Glass Fiber Cloth as a Soft-Smart-Mirror (SSM)

PubMed Central

Cai, Nianjin; Zhang, Wang; Wang, Wanlin; Zhu, Yuchen; Zada, Imran; Gu, Jiajun; Liu, Qinglei; Su, Huilan; Guo, Cuiping; Zhang, Zhijian; Zhang, Jianzhong; Wu, Liping; Zhang, Di

2016-01-01

Designing materials with a negative feedback function is beneficial for achieving temperature regulation inside a greenhouse. VO2 has been studied extensively because of its low insulator-to-metal transition temperature (IMT). In this study, reflection changes during a VO2 phase transition were investigated. Glass fiber cloth was used as a substrate, as it is stable and soft. A VO2 thin film on a glass fiber cloth whose surface contained 96% V4+ and 4% V5+ was prepared using an inorganic sol-gels method. The insulator-to-metal transition temperature was decreased by 38 °C, which was observed from the reflection curve detected using an angle-resolved spectrometer. This decrease in IMT occurred mainly because of the presence of V5+, which causes destabilization of the monoclinic phase of VO2. When the greenhouse temperature was increased from 30 °C to 40 °C, the reflected intensity of VO2 on glass fiber cloth decreased by 22% for the wavelength range of 400 nm to 800 nm. In addition, the angle-independent property of the VO2 thin film was observed using an angle-resolved spectrometer. Owing to its thermo-reflective properties, the thin film can serve as a soft-smart-mirror (SSM) inside a greenhouse to stabilize the temperature, playing a negative feedback role. PMID:27849051

Angle-independent VO2 Thin Film on Glass Fiber Cloth as a Soft-Smart-Mirror (SSM)

NASA Astrophysics Data System (ADS)

Cai, Nianjin; Zhang, Wang; Wang, Wanlin; Zhu, Yuchen; Zada, Imran; Gu, Jiajun; Liu, Qinglei; Su, Huilan; Guo, Cuiping; Zhang, Zhijian; Zhang, Jianzhong; Wu, Liping; Zhang, Di

2016-11-01

Designing materials with a negative feedback function is beneficial for achieving temperature regulation inside a greenhouse. VO2 has been studied extensively because of its low insulator-to-metal transition temperature (IMT). In this study, reflection changes during a VO2 phase transition were investigated. Glass fiber cloth was used as a substrate, as it is stable and soft. A VO2 thin film on a glass fiber cloth whose surface contained 96% V4+ and 4% V5+ was prepared using an inorganic sol-gels method. The insulator-to-metal transition temperature was decreased by 38 °C, which was observed from the reflection curve detected using an angle-resolved spectrometer. This decrease in IMT occurred mainly because of the presence of V5+, which causes destabilization of the monoclinic phase of VO2. When the greenhouse temperature was increased from 30 °C to 40 °C, the reflected intensity of VO2 on glass fiber cloth decreased by 22% for the wavelength range of 400 nm to 800 nm. In addition, the angle-independent property of the VO2 thin film was observed using an angle-resolved spectrometer. Owing to its thermo-reflective properties, the thin film can serve as a soft-smart-mirror (SSM) inside a greenhouse to stabilize the temperature, playing a negative feedback role.

Angle-independent VO2 Thin Film on Glass Fiber Cloth as a Soft-Smart-Mirror (SSM).

PubMed

Cai, Nianjin; Zhang, Wang; Wang, Wanlin; Zhu, Yuchen; Zada, Imran; Gu, Jiajun; Liu, Qinglei; Su, Huilan; Guo, Cuiping; Zhang, Zhijian; Zhang, Jianzhong; Wu, Liping; Zhang, Di

2016-11-16

Designing materials with a negative feedback function is beneficial for achieving temperature regulation inside a greenhouse. VO 2 has been studied extensively because of its low insulator-to-metal transition temperature (IMT). In this study, reflection changes during a VO 2 phase transition were investigated. Glass fiber cloth was used as a substrate, as it is stable and soft. A VO 2 thin film on a glass fiber cloth whose surface contained 96% V 4+ and 4% V 5+ was prepared using an inorganic sol-gels method. The insulator-to-metal transition temperature was decreased by 38 °C, which was observed from the reflection curve detected using an angle-resolved spectrometer. This decrease in IMT occurred mainly because of the presence of V 5+ , which causes destabilization of the monoclinic phase of VO 2 . When the greenhouse temperature was increased from 30 °C to 40 °C, the reflected intensity of VO 2 on glass fiber cloth decreased by 22% for the wavelength range of 400 nm to 800 nm. In addition, the angle-independent property of the VO 2 thin film was observed using an angle-resolved spectrometer. Owing to its thermo-reflective properties, the thin film can serve as a soft-smart-mirror (SSM) inside a greenhouse to stabilize the temperature, playing a negative feedback role.

Nanocolumnar Crystalline Vanadium Oxide-Molybdenum Oxide Antireflective Smart Thin Films with Superior Nanomechanical Properties.

PubMed

Dey, Arjun; Nayak, Manish Kumar; Esther, A Carmel Mary; Pradeepkumar, Maurya Sandeep; Porwal, Deeksha; Gupta, A K; Bera, Parthasarathi; Barshilia, Harish C; Mukhopadhyay, Anoop Kumar; Pandey, Ajoy Kumar; Khan, Kallol; Bhattacharya, Manjima; Kumar, D Raghavendra; Sridhara, N; Sharma, Anand Kumar

2016-11-17

Vanadium oxide-molybdenum oxide (VO-MO) thin (21-475 nm) films were grown on quartz and silicon substrates by pulsed RF magnetron sputtering technique by altering the RF power from 100 to 600 W. Crystalline VO-MO thin films showed the mixed phases of vanadium oxides e.g., V 2 O 5 , V 2 O 3 and VO 2 along with MoO 3 . Reversible or smart transition was found to occur just above the room temperature i.e., at ~45-50 °C. The VO-MO films deposited on quartz showed a gradual decrease in transmittance with increase in film thickness. But, the VO-MO films on silicon exhibited reflectance that was significantly lower than that of the substrate. Further, the effect of low temperature (i.e., 100 °C) vacuum (10 -5 mbar) annealing on optical properties e.g., solar absorptance, transmittance and reflectance as well as the optical constants e.g., optical band gap, refractive index and extinction coefficient were studied. Sheet resistance, oxidation state and nanomechanical properties e.g., nanohardness and elastic modulus of the VO-MO thin films were also investigated in as-deposited condition as well as after the vacuum annealing treatment. Finally, the combination of the nanoindentation technique and the finite element modeling (FEM) was employed to investigate yield stress and von Mises stress distribution of the VO-MO thin films.

Nanocolumnar Crystalline Vanadium Oxide-Molybdenum Oxide Antireflective Smart Thin Films with Superior Nanomechanical Properties

NASA Astrophysics Data System (ADS)

Dey, Arjun; Nayak, Manish Kumar; Esther, A. Carmel Mary; Pradeepkumar, Maurya Sandeep; Porwal, Deeksha; Gupta, A. K.; Bera, Parthasarathi; Barshilia, Harish C.; Mukhopadhyay, Anoop Kumar; Pandey, Ajoy Kumar; Khan, Kallol; Bhattacharya, Manjima; Kumar, D. Raghavendra; Sridhara, N.; Sharma, Anand Kumar

2016-11-01

Vanadium oxide-molybdenum oxide (VO-MO) thin (21-475 nm) films were grown on quartz and silicon substrates by pulsed RF magnetron sputtering technique by altering the RF power from 100 to 600 W. Crystalline VO-MO thin films showed the mixed phases of vanadium oxides e.g., V2O5, V2O3 and VO2 along with MoO3. Reversible or smart transition was found to occur just above the room temperature i.e., at ~45-50 °C. The VO-MO films deposited on quartz showed a gradual decrease in transmittance with increase in film thickness. But, the VO-MO films on silicon exhibited reflectance that was significantly lower than that of the substrate. Further, the effect of low temperature (i.e., 100 °C) vacuum (10-5 mbar) annealing on optical properties e.g., solar absorptance, transmittance and reflectance as well as the optical constants e.g., optical band gap, refractive index and extinction coefficient were studied. Sheet resistance, oxidation state and nanomechanical properties e.g., nanohardness and elastic modulus of the VO-MO thin films were also investigated in as-deposited condition as well as after the vacuum annealing treatment. Finally, the combination of the nanoindentation technique and the finite element modeling (FEM) was employed to investigate yield stress and von Mises stress distribution of the VO-MO thin films.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhao, Yong; Pan, Xuan; Bernussi, Ayrton A.

We demonstrate that catalyst-assisted hydrogen spillover doping of VO{sub 2} thin films significantly alters the metal-insulator transition characteristics and stabilizes the metallic rutile phase at room temperature. With hydrogen inserted into the VO{sub 2} lattice, high resolution X-ray diffraction reveals expansion of the V-V chain separation when compared to the VO{sub 2}(R) phase. The donated free electrons, possibly from O-H bond formation, stabilize the VO{sub 2}(R) to low temperatures. By controlling the amount of dopants to obtain mixed insulating and metallic phases, VO{sub 2} resistivity can be continuously tuned until a critical condition is achieved that suppresses Fabry-Perot resonances. Ourmore » results demonstrate that hydrogen spillover is an effective technique to tune the electrical and optical properties of VO{sub 2} thin films.« less

Growth temperature-dependent metal–insulator transition of vanadium dioxide epitaxial films on perovskite strontium titanate (111) single crystals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Liangxin; Zhao, Jiangtao; Hong, Bin

2016-04-14

Vanadium dioxide (VO{sub 2}) epitaxial films were grown on perovskite single-crystal strontium titanate (SrTiO{sub 3}) substrates by reactive radio-frequency magnetron sputtering. The growth temperature-dependent metal–insulator transition (MIT) behavior of the VO{sub 2} epitaxial films was then investigated. We found that the order of magnitude of resistance change across the MIT increased from 10{sup 2} to 10{sup 4} with increasing growth temperature. In contrast, the temperature of the MIT does not strongly depend on the growth temperature and is fairly stable at about 345 K. On one hand, the increasing magnitude of the MIT is attributed to the better crystallinity and thusmore » larger grain size in the (010)-VO{sub 2}/(111)-SrTiO{sub 3} epitaxial films at elevated temperature. On the other hand, the strain states do not change in the VO{sub 2} films deposited at various temperatures, resulting in stable V-V chains and V-O bonds in the VO{sub 2} epitaxial films. The accompanied orbital occupancy near the Fermi level is also constant and thus the MIT temperatures of VO{sub 2} films deposited at various temperatures are nearly the same. This work demonstrates that high-quality VO{sub 2} can be grown on perovskite substrates, showing potential for integration into oxide heterostructures and superlattices.« less

Sapphire substrate-induced effects in VO2 thin films grown by oxygen plasma-assisted pulsed laser deposition

NASA Astrophysics Data System (ADS)

Skuza, J. R.; Scott, D. W.; Pradhan, A. K.

2015-11-01

We investigate the structural and electronic properties of VO2 thin films on c-plane sapphire substrates with three different surface morphologies to control the strain at the substrate-film interface. Only non-annealed substrates with no discernible surface features (terraces) provided a suitable template for VO2 film growth with a semiconductor-metal transition (SMT), which was much lower than the bulk transition temperature. In addition to strain, oxygen vacancy concentration also affects the properties of VO2, which can be controlled through deposition conditions. Oxygen plasma-assisted pulsed laser deposition allows favorable conditions for VO2 film growth with SMTs that can be easily tailored for device applications.

Structure and enhanced thermochromic performance of low-temperature fabricated VO2/V2O3 thin film

NASA Astrophysics Data System (ADS)

Sun, Guangyao; Cao, Xun; Gao, Xiang; Long, Shiwei; Liang, Mengshi; Jin, Ping

2016-10-01

For VO2-based smart window manufacture, it is a long-standing demand for high-quality thin films deposited at low temperature. Here, the thermochromic films of VO2 were deposited by a magnetron sputtering method at a fairly low temperature of 250 °C without subsequent annealing by embedding a V2O3 interlayer. V2O3 acts as a seed layer to lower the depositing temperature and buffer layer to epitaxial grow VO2 film. The VO2/V2O3 films display high solar modulating ability and narrow hysteresis loop. Our data can serve as a promising point for industrial production with high degree of crystallinity at a low temperature.

Microwave assisted growth of nanorods vanadium dioxide VO2 (R): structural and electrical properties

NASA Astrophysics Data System (ADS)

Derkaoui, I.; Khenfouch, M.; Mothudi, B. M.; Moloi, S. J.; Zorkani, I.; Jorio, A.; Maaza, M.

2018-03-01

Nanostructured metal oxides have attracted a lot of attention recently owning to their unique structural advantages and demonstrated promising chemical and physical properties for various applications. In this study, we report the structural and electrical properties of vanadium dioxide VO2 (R) prepared via a single reaction microwave (SRC) synthesis. Our results are revealing that the components of VO2 (R) films have a rod-like shape with a uniform size distribution. The nanorods with very smooth and flat surfaces have a typical length of up to 2μm and a width of about several nanometers. The structural investigations reveal the high crystallinity of VO2 (R) ensuring good electrical contact and showing a high conductivity as a function of temperature. This synthesis method provides a new simple route to fabricate one-dimensional nanostructured metal oxides which is suitable for a large field of applications especially for smart windows.

Control of electromagnetically induced transparency via a hybrid semiconductor quantum dot-vanadium dioxide nanoparticle system

NASA Astrophysics Data System (ADS)

Zamani, Naser; Hatef, Ali; Nadgaran, Hamid; Keshavarz, Alireza

2017-07-01

We numerically investigate the electromagnetically induced transparency (EIT) of a hybrid system consisting of a three-level quantum dot (QD) in the vicinity of vanadium dioxide nanoparticle (VO2NP). VO2NP has semiconductor and metallic phases where the transition between the two phases occurs around a critical temperature. When the QD-VO2NP hybrid system interacts with continuous wave laser fields in an infrared regime, it supports a coherent coupling of exciton-polariton and exciton-plasmon polariton in semiconductor and metal phases of VO2NP, respectively. In our calculations a filling fraction factor controls the VO2NP phase transition. A probe and control laser field configuration is studied for the hybrid system to measure the absorption of QD through the filling fraction factor manipulations. We show that for the VO2NP semiconductor phase and proper geometrical configuration, the absorption spectrum profile of the QD represents an EIT with two peaks and a clear minimum. These two peaks merge to one through the VO2NP phase transition to metal. We also show that the absorption spectrum profile is modified by different orientations of the laser fields with the axis of the QD-VO2NP hybrid system. The innovation in comparison to other research in the field is that robust variation in the absorption profile through EIT is due to the phase transition in VO2NP without any structural change in the QD-VO2NP hybrid system. Our results can be employed to design nanothermal sensors, optical nanoswitches, and energy transfer devices.

Observation of reduced phase transition temperature in N-doped thermochromic film of monoclinic VO2

NASA Astrophysics Data System (ADS)

Wan, Meinan; Xiong, Mo; Li, Neng; Liu, Baoshun; Wang, Shuo; Ching, Wai-Yim; Zhao, Xiujian

2017-07-01

Research on monoclinic (M1) phase of VO2 has attracted a great of interest for smart coating applications due to its exceptional thermochromic property. Herein, we report the results using a novel approach to synthesize N-doped VO2(M1) thin films with high purity by heat treatment in NH3 atmosphere. The N dopant in the film can be regulated by varying NH3 concentration during the annealing process. We find that the N atoms are located at the interstitial sites or substitute oxygen atoms, and the V-N bonds in the VO2 thin films increase with NH3 concentration. The metal to insulator transition (MIT) temperature (τc,h) of the VO2 thin film is effectively reduced from 80.0 to 62.9 °C, while the solar modulation efficiency (ΔTsol) and the modulation efficiency at 2000 nm (ΔT2000nm) are 7.36% and 55.6% respectively. The band gap of N-doped VO2 thin films related to MIT (Eg1) is estimated to be as low as 0.18-0.25 eV whereas the band gap associated with the visible transparency (Eg2) is about 1.50-1.58 eV. Based on the highly accurate first-principles calculations, the Eg1 of VO2 (M1) is reduced after substituted or interstitial N-doping, while the Eg2 alters with the mode of N-doping, which is excellent agreement with experimental measurement.

Epitaxial stabilization and phase instability of VO 2 polymorphs

DOE PAGES

Lee, Shinbuhm; Ivanov, Ilia N.; Keum, Jong K.; ...

2016-01-20

The VO 2 polymorphs, i.e., VO 2(A), VO 2(B), VO 2(M1) and VO 2(R), have a wide spectrum of functionalities useful for many potential applications in information and energy technologies. However, synthesis of phase pure materials, especially in thin film forms, has been a challenging task due to the fact that the VO 2 polymorphs are closely related to each other in a thermodynamic framework. Here, we report epitaxial stabilization of the VO 2 polymorphs to synthesize high quality single crystalline thin films and study the phase stability of these metastable materials. We selectively deposit all the phases on variousmore » perovskite substrates with different crystallographic orientations. By investigating the phase instability, phonon modes and transport behaviours, not only do we find distinctively contrasting physical properties of the VO 2 polymorphs, but that the polymorphs can be on the verge of phase transitions when heated as low as ~400 °C. In conclusion, our successful epitaxy of both VO 2(A) and VO 2(B) phases, which are rarely studied due to the lack of phase pure materials, will open the door to the fundamental studies of VO 2 polymorphs for potential applications in advanced electronic and energy devices.« less

Metal-insulator transition characteristics of VO2 thin films grown on Ge(100) single crystals

NASA Astrophysics Data System (ADS)

Yang, Z.; Ko, C.; Ramanathan, S.

2010-10-01

Phase transitions exhibited by correlated oxides could be of potential relevance to the emerging field of oxide electronics. We report on the synthesis of high-quality VO2 thin films grown on single crystal Ge(100) substrates by physical vapor deposition and their metal-insulator transition (MIT) properties. Thermally triggered MIT is demonstrated with nearly three orders of magnitude resistance change across the MIT with transition temperatures of 67 °C (heating) and 61 °C (cooling). Voltage-triggered hysteretic MIT is observed at room temperature at threshold voltage of ˜2.1 V for ˜100 nm thickness VO2 films. Activation energies for electron transport in the insulating and conducting states are obtained from variable temperature resistance measurements. We further compare the properties of VO2 thin films grown under identical conditions on Si(100) single crystals. The VO2 thin films grown on Ge substrate show higher degree of crystallinity, slightly reduced compressive strain, larger resistance change across MIT compared to those grown on Si. Depth-dependent x-ray photoelectron spectroscopy measurements were performed to provide information on compositional variation trends in the two cases. These results suggest Ge could be a suitable substrate for further explorations of switching phenomena and devices for thin film functional oxides.

Nanocolumnar Crystalline Vanadium Oxide-Molybdenum Oxide Antireflective Smart Thin Films with Superior Nanomechanical Properties

PubMed Central

Dey, Arjun; Nayak, Manish Kumar; Esther, A. Carmel Mary; Pradeepkumar, Maurya Sandeep; Porwal, Deeksha; Gupta, A. K.; Bera, Parthasarathi; Barshilia, Harish C.; Mukhopadhyay, Anoop Kumar; Pandey, Ajoy Kumar; Khan, Kallol; Bhattacharya, Manjima; Kumar, D. Raghavendra; Sridhara, N.; Sharma, Anand Kumar

2016-01-01

Vanadium oxide-molybdenum oxide (VO-MO) thin (21–475 nm) films were grown on quartz and silicon substrates by pulsed RF magnetron sputtering technique by altering the RF power from 100 to 600 W. Crystalline VO-MO thin films showed the mixed phases of vanadium oxides e.g., V2O5, V2O3 and VO2 along with MoO3. Reversible or smart transition was found to occur just above the room temperature i.e., at ~45–50 °C. The VO-MO films deposited on quartz showed a gradual decrease in transmittance with increase in film thickness. But, the VO-MO films on silicon exhibited reflectance that was significantly lower than that of the substrate. Further, the effect of low temperature (i.e., 100 °C) vacuum (10−5 mbar) annealing on optical properties e.g., solar absorptance, transmittance and reflectance as well as the optical constants e.g., optical band gap, refractive index and extinction coefficient were studied. Sheet resistance, oxidation state and nanomechanical properties e.g., nanohardness and elastic modulus of the VO-MO thin films were also investigated in as-deposited condition as well as after the vacuum annealing treatment. Finally, the combination of the nanoindentation technique and the finite element modeling (FEM) was employed to investigate yield stress and von Mises stress distribution of the VO-MO thin films. PMID:27853234

Electrochemically Induced Insulator-Metal-Insulator Transformations of Vanadium Dioxide Nanocrystal Films

NASA Astrophysics Data System (ADS)

Milliron, Delia; Dahlman, Clayton; Leblanc, Gabriel; Bergerud, Amy

Vanadium dioxide (VO2) undergoes significant optical, electronic, and structural changes as it transforms between the low-temperature monoclinic and high-temperature rutile phases. The low-temperature state is insulating and transparent, while the high-temperature state is metallic and IR blocking. Alternative stimuli have been utilized to trigger insulator-to-metal transformations in VO2, including electrochemical gating. Here, VO2 nanocrystal films have been prepared by solution deposition of V2O3 nanocrystals followed by oxidative annealing. Nanocrystalline VO2 films are electrochemically reduced, inducing changes in their electronic and optical properties. We observe a reversible transition between infrared transparent insulating phases and a darkened metallic phase by in situ visible-near-infrared spectroelectrochemistry and correlate these observations with structural and electronic changes monitored by X-ray absorption spectroscopy, X-ray diffraction, Raman spectroscopy, and conductivity measurements. Reduction causes an initial transformation to a metallic, IR-colored distorted monoclinic phase. However, an unexpected reversible transition from conductive, reduced monoclinic VO2 to an infrared-transparent insulating phase is observed upon further reduction.

Structure and enhanced thermochromic performance of low-temperature fabricated VO 2/V 2O 3 thin film

DOE PAGES

Sun, Guangyao; Cao, Xun; Gao, Xiang; ...

2016-10-06

For VO 2-based smart window manufacture, it is a long-standing demand for high-quality thin films deposited at low temperature. In this paper, the thermochromic films of VO 2 were deposited by a magnetron sputtering method at a fairly low temperature of 250 °C without subsequent annealing by embedding a V 2O 3 interlayer. V 2O 3 acts as a seed layer to lower the depositing temperature and buffer layer to epitaxial grow VO 2 film. The VO 2/V 2O 3 films display high solar modulating ability and narrow hysteresis loop. Finally, our data can serve as a promising point formore » industrial production with high degree of crystallinity at a low temperature.« less

Rapid hydrothermal synthesis of VO2 (B) and its conversion to thermochromic VO2 (M1).

PubMed

Popuri, Srinivasa Rao; Miclau, Marinela; Artemenko, Alla; Labrugere, Christine; Villesuzanne, Antoine; Pollet, Michaël

2013-05-06

The present study provides a rapid way to obtain VO2 (B) under economical and environmentally friendly conditions. VO2 (B) is one of the well-known polymorphs of vanadium dioxide and is a promising cathode material for aqueous lithium ion batteries. VO2 (B) was successfully synthesized by rapid single-step hydrothermal process using V2O5 and citric acid as precursors. The present study shows that phase-pure VO2 (B) polytype can be easily obtained at 180 °C for 2 h and 220 °C for 1 h, that is, the lowest combination of temperature and duration reported so far. The obtained VO2 (B) is characterized by X-ray powder diffraction, high-resolution scanning electron microscopy, and Fourier transform infrared spectroscopy. In addition, we present an indirect way to obtain VO2 (M1) by annealing VO2 (B) under vacuum for 1 h.

Thermally tunable VO2-SiO2 nanocomposite thin-film capacitors

NASA Astrophysics Data System (ADS)

Sun, Yifei; Narayanachari, K. V. L. V.; Wan, Chenghao; Sun, Xing; Wang, Haiyan; Cooley, Kayla A.; Mohney, Suzanne E.; White, Doug; Duwel, Amy; Kats, Mikhail A.; Ramanathan, Shriram

2018-03-01

We present a study of co-sputtered VO2-SiO2 nanocomposite dielectric thin-film media possessing continuous temperature tunability of the dielectric constant. The smooth thermal tunability is a result of the insulator-metal transition in the VO2 inclusions dispersed within an insulating matrix. We present a detailed comparison of the dielectric characteristics of this nanocomposite with those of a VO2 control layer and of VO2/SiO2 laminate multilayers of comparable overall thickness. We demonstrated a nanocomposite capacitor that has a thermal capacitance tunability of ˜60% between 25 °C and 100 °C at 1 MHz, with low leakage current. Such thermally tunable capacitors could find potential use in applications such as sensing, thermal cloaks, and phase-change energy storage devices.

Photo-driven nanoactuators based on carbon nanocoils and vanadium dioxide bimorphs.

PubMed

Ma, He; Zhang, Xinping; Cui, Ruixue; Liu, Feifei; Wang, Meng; Huang, Cuiying; Hou, Jiwei; Wang, Guang; Wei, Yang; Jiang, Kaili; Pan, Lujun; Liu, Kai

2018-06-06

Photo-driven actuators are highly desirable in various smart systems owing to the advantages of wireless control and possible actuation by solar energy. Miniaturization of photo-driven actuators is particularly essential in micro-robotics and micro-/nano-electro-mechanical systems. However, it remains a great challenge to build up nano-scale photo-driven actuators with competitive performance in amplitude, response speed, and lifetime. In this work, we developed photo-driven nanoactuators based on bimorph structures of vanadium dioxides (VO2) and carbon nanocoils (CNCs). Activated by the huge structural phase transition of VO2, the photo-driven VO2/CNC nanoactuators deliver a giant amplitude, a fast response up to 9400 Hz, and a long lifetime more than 10 000 000 actuation cycles. Both experimental and simulation results show that the helical structure of CNCs enables a low photo-driven threshold of VO2/CNC nanoactuators, which provides an effective method to construct photo-driven nanoactuators with low power consumption. Our photo-driven VO2/CNC nanoactuators would find potential applications in nano-scale electrical/optical switches and other smart devices.

Atomic Layer Deposition of Vanadium Dioxide and a Temperature-dependent Optical Model.

PubMed

Currie, Marc; Mastro, Michael A; Wheeler, Virginia D

2018-05-23

Vanadium dioxide is a material that has a reversible metal-insulator phase change near 68 °C. To grow VO2 on a wide variety of substrates, with wafer-scale uniformity and angstrom level control of thickness, the method of atomic-layer deposition was chosen. This ALD process enables high-quality, low-temperature (≤150 °C) growth of ultrathin films (100-1000 Å) of VO2. For this demonstration, the VO2 films were grown on sapphire substrates. This low temperature growth technique produces mostly amorphous VO2 films. A subsequent anneal in an ultra-high vacuum chamber with a pressure of 7x10 -4 Pa of ultra-high purity (99.999%) oxygen produced oriented, polycrystalline VO2 films. The crystallinity, phase, and strain of the VO2 were determined by Raman spectroscopy and X-ray diffraction, while the stoichiometry and impurity levels were determined by X-ray photoelectron spectroscopy, and finally the morphology was determined by atomic force microscopy. These data demonstrate the high-quality of the films grown by this technique. A model was created to fit to the data for VO2 in its metallic and insulating phases in the near infrared spectral region. The permittivity and refractive index of the ALD VO2 agreed well with the other fabrication methods in its insulating phase, but showed a difference in its metallic state. Finally, the analysis of the films' optical properties enabled the creation of a wavelength- and temperature-dependent model of the complex optical refractive index for developing VO2 as a tunable refractive index material.

Electrical switching and oscillations in vanadium dioxide

NASA Astrophysics Data System (ADS)

Pergament, Alexander; Velichko, Andrey; Belyaev, Maksim; Putrolaynen, Vadim

2018-05-01

We have studied electrical switching with S-shaped I-V characteristics in two-terminal MOM devices based on vanadium dioxide thin films. The switching effect is associated with the metal-insulator phase transition. Relaxation oscillations are observed in circuits with VO2-based switches. Dependences of the oscillator critical frequency Fmax, threshold power and voltage, as well as the time of current rise, on the switching structure size are obtained by numerical simulation. The empirical dependence of the threshold voltage on the switching region dimensions and film thickness is found. It is shown that, for the VO2 channel sizes of 10 × 10 nm, Fmax can reach the value of 300 MHz at a film thickness of 20 nm. Next, it is shown that oscillatory neural networks can be implemented on the basis of coupled VO2 oscillators. For the weak capacitive coupling, we revealed the dependence of the phase difference upon synchronization on the coupling capacitance value. When the switches are scaled down, the limiting time of synchronization is reduced to Ts 13 μs, and the number of oscillation periods for the entering to the synchronization mode remains constant, Ns 17. In the case of weak thermal coupling in the synchronization mode, we observe in-phase behavior of oscillators, and there is a certain range of parameters of the supply current, in which the synchronization effect becomes possible. With a decrease in dimensions, a decrease in the thermal coupling action radius is observed, which can vary in the range from 0.5 to 50 μm for structures with characteristic dimensions of 0.1-5 μm, respectively. Thermal coupling may have a promising effect for realization of a 3D integrated oscillatory neural network.

Growth and characterization of ultra thin vanadium oxide films

NASA Astrophysics Data System (ADS)

Song, Fangfang

This dissertation focuses on the growth and characterization of ultra thin VO2 films on technologically relevant Si/SiO2 substrate. The samples were prepared by magnetron sputtering with varying deposition and post annealing conditions. VO2(M1) films prepared under optimal condition with thickness around 42nm shows a continuous micro-structure and a metal insulator transition with resistivity change of two orders of magnitude. The transition temperature is determined to be 345K with a hysteresis width of approximately 8°C. The activation energy of the low temperature semiconducting VO2 monoclinic phase is determined to be 0.16+/-0.03ev. These properties are found to be fairly stable over time under ambient atmosphere. Temperature dependent hall measurements suggest that the decrease of the resistivity with increasing temperature is mainly caused by the increase of the number density of charge carriers, the energy gap of VO2 film in the semiconducting phase is 0.4ev and phonon scattering is the dominant scattering mechanism in the temperature range from 195K to 340K. Analysis based on composite model suggested that the sample has some untransitional phases with a length that is 1/4 of the grain size. Stress measurements using X-ray diffraction indicate that the ultra thin VO2 film has a large tensile stress of 2.0+/-0.2GPa. This value agrees well with that calculated thermal stress assuming the stress is due to differential thermal expansion between VO2 film and substrate. The stress is expected to lead to a shift of the transition temperature in the film, as observed. Using magnetron sputtering, VO2(B) film was able to obtained on Si substrate. The temperature dependent current voltage measurement on VO2(B) film did not show any abrupt change in the electrical resistivity. W - VO2(B) thin film - W metal semiconductor-metal I-V properties were found to be determined by reverse biased Schottky barrier at the W/VO 2(b) interface. And the Schottky height between VO2(B) and W was determined to be about 0.15ev, which indicate the electron affinity of the VO2(B) is about 4.35ev.

Optical modulation in silicon-vanadium dioxide photonic structures

NASA Astrophysics Data System (ADS)

Miller, Kevin J.; Hallman, Kent A.; Haglund, Richard F.; Weiss, Sharon M.

2017-08-01

All-optical modulators are likely to play an important role in future chip-scale information processing systems. In this work, through simulations, we investigate the potential of a recently reported vanadium dioxide (VO2) embedded silicon waveguide structure for ultrafast all-optical signal modulation. With a VO2 length of only 200 nm, finite-differencetime- domain simulations suggest broadband (200 nm) operation with a modulation greater than 12 dB and an insertion loss of less than 3 dB. Predicted performance metrics, including modulation speed, modulation depth, optical bandwidth, insertion loss, device footprint, and energy consumption of the proposed Si-VO2 all-optical modulator are benchmarked against those of current state-of-the-art all-optical modulators with in-plane optical excitation.

Microstructure and thermochromic properties of VOX-WOX-VOX ceramic thin films

NASA Astrophysics Data System (ADS)

Khamseh, S.; Araghi, H.; Ghahari, M.; Faghihi Sani, M. A.

2016-03-01

W-doped VO2 films have been synthesized via oxygen annealing of V-W-V (vanadium-tungsten-vanadium) multilayered films. The effects of middle layer's thickness of V-W-V multilayered film on structure and properties of VOX-WOX-VOX ceramic thin films were investigated. The as-deposited V-W-V multilayered film showed amorphous-like structure when mixed structure of VO2 (M) and VO2 (B) was formed in VOX-WOX-VOX ceramic thin films. Tungsten content of VOX-WOX-VOX ceramic thin films increased with increasing middle layer's thickness. With increasing middle layer's thickness, room temperature square resistance ( R sq) of VOX-WOX-VOX ceramic thin films increased from 65 to 86 kΩ/sq. The VOX-WOX-VOX ceramic thin film with the thinnest middle layer showed significant SMT (semiconductor-metal transition) when SMT became negligible on increasing middle layer's thickness.

Sapphire substrate-induced effects in VO{sub 2} thin films grown by oxygen plasma-assisted pulsed laser deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Skuza, J. R., E-mail: jrskuza@nsu.edu, E-mail: apradhan@nsu.edu; Scott, D. W.; Pradhan, A. K., E-mail: jrskuza@nsu.edu, E-mail: apradhan@nsu.edu

2015-11-21

We investigate the structural and electronic properties of VO{sub 2} thin films on c-plane sapphire substrates with three different surface morphologies to control the strain at the substrate-film interface. Only non-annealed substrates with no discernible surface features (terraces) provided a suitable template for VO{sub 2} film growth with a semiconductor-metal transition (SMT), which was much lower than the bulk transition temperature. In addition to strain, oxygen vacancy concentration also affects the properties of VO{sub 2}, which can be controlled through deposition conditions. Oxygen plasma-assisted pulsed laser deposition allows favorable conditions for VO{sub 2} film growth with SMTs that can bemore » easily tailored for device applications.« less

Postfabrication annealing effects on insulator-metal transitions in VO2 thin-film devices.

PubMed

Rathi, Servin; Lee, In-yeal; Park, Jin-Hyung; Kim, Bong-Jun; Kim, Hyun-Tak; Kim, Gil-Ho

2014-11-26

In order to investigate the metal-insulator transition characteristics of VO2 devices annealed in reducing atmosphere after device fabrication at various temperature, electrical, chemical, and thermal characteristics are measured and analyzed. It is found that the sheet resistance and the insulator-metal transition point, induced by both voltage and thermal, decrease when the devices are annealed from 200 to 500 °C. The V 2p3/2 peak variation in X-ray photoelectron spectroscopy (XPS) characterization verifies the reduction of thin-films. A decrease of the transition temperature from voltage hysteresis measurements further endorse the reducing effects of the annealing on VO2 thin-film.

Tuning of thermally induced first-order semiconductor-to-metal transition in pulsed laser deposited VO2 epitaxial thin films

NASA Astrophysics Data System (ADS)

Behera, Makhes K.; Pradhan, Dhiren K.; Pradhan, Sangram K.; Pradhan, Aswini K.

2017-12-01

Vanadium oxide (VO2) thin films have drawn significant research and development interest in recent years because of their intriguing physical origin and wide range of functionalities useful for many potential applications, including infrared imaging, smart windows, and energy and information technologies. However, the growth of highly epitaxial films of VO2, with a sharp and distinct controllable transition, has remained a challenge. Here, we report the structural and electronic properties of high quality and reproducible epitaxial thin films of VO2, grown on c-axis oriented sapphire substrates using pulsed laser deposition at different deposition pressures and temperatures, followed by various annealing schedules. Our results demonstrate that the annealing of epitaxial VO2 films significantly enhances the Semiconductor to Metal Transition (SMT) to that of bulk VO2 transition. The effect of oxygen partial pressure during the growth of VO2 films creates a significant modulation of the SMT from around room temperature to as high as the theoretical value of 68 °C. We obtained a bulk order transition ≥104 while reducing the transition temperature close to 60 °C, which is comparatively less than the theoretical value of 68 °C, demonstrating a clear and drastic improvement in the SMT switching characteristics. The results reported here will open the door to fundamental studies of VO2, along with tuning of the transition temperatures for potential applications for multifunctional devices.

Combined Thermochromic And Plasmonic: Optical Responses In Novel Nanocomposite Au-VO2 Films Prepared By RF Inverted Cylindrical Magnetron Sputtering

NASA Astrophysics Data System (ADS)

Kana, J. B. Kana; Ndjaka, J. M.; Manyala, N.; Nemraoui, O.; Beye, A. C.; Maaza, M.

2008-09-01

We prepared gold/Vanadium dioxide nanocomposites thin films by the rf reactive inverted cylindrical magnetron sputtering (ICMS) for the first time and report their enhanced surface plasmon resonance (SPR) tunable shift reversibility. ICMS has been attracting much attention for its ability for uniform coating of three-dimensional objects and high-rate deposition of dielectric materials. To investigate the optical properties of gold nanoparticles embedded in an active matrix (VO2) composite film was synthesized on corning glass substrates for several substrate temperatures ranging from 400 °C to 600 °C. The X-ray diffraction results demonstrated that the Au and VO2 were well crystallized. The optical transmission properties were measured from 300nm to 1100nm and the absorption peak due to the surface plasmon resonance (SPR) of Au nanoparticles were observed. Under external temperature stimuli, the tunable reversibility of the SPR shift was observed when the nanocomposites temperature varies from 20 °C to 100 °C. The enhancement of this shift of SPR was observed as the substrate temperature increases and it was found that the shift of SPR increased rapidly with increasing substrate temperature but then remained constant at ˜57 nm for substrate temperature higher than 500 °C.

Irreversible metal-insulator transition in thin film VO2 induced by soft X-ray irradiation

NASA Astrophysics Data System (ADS)

Singh, V. R.; Jovic, V.; Valmianski, I.; Ramirez, J. G.; Lamoureux, B.; Schuller, Ivan K.; Smith, K. E.

2017-12-01

In this study, we show the ability of soft x-ray irradiation to induce room temperature metal-insulator transitions (MITs) in VO2 thin films grown on R-plane sapphire. The ability of soft x-rays to induce MIT in VO2 thin films is confirmed by photoemission spectroscopy and soft x-ray spectroscopy measurements. When irradiation was discontinued, the systems do not return to the insulating phase. Analysis of valence band photoemission spectra revealed that the density of states (DOSs) of the V 3d band increased with irradiation time, while the DOS of the O 2p band decreased. We use these results to propose a model in which the MIT is driven by oxygen desorption from thin films during irradiation.

VO2 /TiN Plasmonic Thermochromic Smart Coatings for Room-Temperature Applications.

PubMed

Hao, Qi; Li, Wan; Xu, Huiyan; Wang, Jiawei; Yin, Yin; Wang, Huaiyu; Ma, Libo; Ma, Fei; Jiang, Xuchuan; Schmidt, Oliver G; Chu, Paul K

2018-03-01

Vanadium dioxide/titanium nitride (VO 2 /TiN) smart coatings are prepared by hybridizing thermochromic VO 2 with plasmonic TiN nanoparticles. The VO 2 /TiN coatings can control infrared (IR) radiation dynamically in accordance with the ambient temperature and illumination intensity. It blocks IR light under strong illumination at 28 °C but is IR transparent under weak irradiation conditions or at a low temperature of 20 °C. The VO 2 /TiN coatings exhibit a good integral visible transmittance of up to 51% and excellent IR switching efficiency of 48% at 2000 nm. These unique advantages make VO 2 /TiN promising as smart energy-saving windows. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Semiconductor-metal phase transition of vanadium dioxide nanostructures on silicon substrate: Applications for thermal control of spacecraft

DOE Office of Scientific and Technical Information (OSTI.GOV)

Leahu, G. L., E-mail: roberto.livoti@uniroma1.it; Li Voti, R., E-mail: roberto.livoti@uniroma1.it; Larciprete, M. C., E-mail: roberto.livoti@uniroma1.it

2014-06-19

We present a detailed infrared study of the semiconductor-to-metal transition (SMT) in a vanadium dioxide (VO2) film deposited on silicon wafer. The VO2 phase transition is studied in the mid-infrared (MIR) region by analyzing the transmittance and the reflectance measurements, and the calculated emissivity. The temperature behaviour of the emissivity during the SMT put into evidence the phenomenon of the anomalous absorption in VO2 which has been explained by applying the Maxwell Garnett effective medium approximation theory, together with a strong hysteresis phenomenon, both useful to design tunable thermal devices to be applied for the thermal control of spacecraft. Wemore » have also applied the photothermal radiometry in order to study the changes in the modulated emissivity induced by laser. Experimental results show how the use of these techniques represent a good tool for a quantitative measurement of the optothermal properties of vanadium dioxide based structures.« less

Preparation and enhanced infrared response properties of ordered W-doped VO2 nanowire array

NASA Astrophysics Data System (ADS)

Xie, Bing He; Fu, Wen Biao; Fei, Guang Tao; Xu, Shao Hui; Gao, Xu Dong; Zhang, Li De

2018-04-01

In this article, pure and tungsten-doped (W-doped) highly ordered two-dimensional (2D) vanadium dioxide (VO2) nanowire arrays were successfully prepared by a hydrothermal treatment, followed by a self-assembly progress and the in-situ high temperature treatment. The infrared photodetector devices based on monoclinic VO2 (VO2(M)) and W-doped VO2(M) nanowires were comparatively studied . It was found that the device based on W-doped VO2(M) nanowires exhibits a rapid infrared response and an enhanced photoelectric responsivity of 21.4 mA/W under the incident infrared light intensity of 280 mW/cm2, which is nearly two orders of magnitude superior to pure VO2(M) nanowire array. Our experimental results provided a direct and convenient path for design of future high-performance photodetector devices.

Spectroscopic analysis of phase constitution of high quality VO2 thin film prepared by facile sol-gel method

NASA Astrophysics Data System (ADS)

Wu, Y. F.; Fan, L. L.; Chen, S. M.; Chen, S.; Zou, C. W.; Wu, Z. Y.

2013-04-01

VO2 thin films with large-area were prepared on Al2O3 substrates by a simple sol-gel method. After an annealing treatment under low vacuum condition, all the VO2 films showed a preferred growth direction and exhibited excellent semiconductor-metal transition (SMT) characteristics. The structure and electrical properties of the obtained VO2 films were investigated systematically. Raman spectra, X-ray diffraction and X-ray absorption spectra measurements pointed out that the VO2 film on Al_2 O_3 ( {10overline 1 0}) substrate showed a M1 phase instead of M2 phase as reported in previous studies. Based on the experiment results, it was suggested that the strained structure of oriented VO2 films could be a mechanism for the formation of the intermediate M2 phase, whereas it is difficult to access the pure M2 phase of undoped VO2 films. VO2 film on Al_2 O_3 ( {10overline 1 0} ) substrate showed a lower SMT temperature compared to VO2 film on Al2O3 (0001), which can be mostly attributed to the differences of both lattice mismatch and thermal stress. The present results confirm and make clear the relevance of the substrate orientation in the growth of VO2 film and their different contributions to the SMT characteristics in vanadate systems.

Stress compensation for arbitrary curvature control in vanadium dioxide phase transition actuators

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dong, Kaichen, E-mail: dkc12@mails.tsinghua.edu.cn, E-mail: wuj@berkeley.edu; Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720; State Key Laboratory of Precision Measurement Technology and Instruments, Department of Precision Instrument, Tsinghua University, Beijing 100084

2016-07-11

Due to its thermally driven structural phase transition, vanadium dioxide (VO{sub 2}) has emerged as a promising material for micro/nano-actuators with superior volumetric work density, actuation amplitude, and repetition frequency. However, the high initial curvature of VO{sub 2} actuators severely obstructs the actuation performance and application. Here, we introduce a “seesaw” method of fabricating tri-layer cantilevers to compensate for the residual stress and realize nearly arbitrary curvature control of VO{sub 2} actuators. By simply adjusting the thicknesses of the individual layers, cantilevers with positive, zero, or negative curvatures can be engineered. The actuation amplitude can be decoupled from the curvaturemore » and controlled independently as well. Based on the experimentally measured residual stresses, we demonstrate sub-micron thick VO{sub 2} actuators with nearly zero final curvature and a high actuation amplitude simultaneously. This “seesaw” method can be further extended to the curvature engineering of other microelectromechanical system multi-layer structures where large stress-mismatch between layers are inevitable.« less

Variable electrical properties in composites: Application to vanadium dioxide pigments in a polyethylene host

DOE Office of Scientific and Technical Information (OSTI.GOV)

Alfred-Duplan, C.; Musso, J.; Gavarri, J.R.

1994-05-01

Composite pellets were prepared from low-density polyethylene (LDPE) and vanadium dioxide powders. The VO[sub 2] pigments are used for their insulating-to-metallic transition at 341 K in order to obtain electrically variable composite materials. The volume fractions of VO[sub 2] powders vary from [phi] = 0 to [phi] = 0.55. The composite samples are characterized by X-ray diffraction and scanning electron microscopy. Complex impedance analysis in the frequency range 10[sup [minus]1] to 10[sup 6]. Hz is carried out at room temperature and at T = 363 K, to observe the insulator-metal transition of VO[sub 2] pigments dispersed in the polymer host.more » The variation of the complex impedance modulus [vert bar]Z[vert bar] with frequency and with VO[sub 2] volume fraction ([phi]) is discussed. A specific (R, C) impedance model permits interpretation of the experimental results in terms of percolation; the observed variations can be accounted for.« less

Voltage switching of a VO{sub 2} memory metasurface using ionic gel

DOE Office of Scientific and Technical Information (OSTI.GOV)

Goldflam, M. D.; Liu, M. K.; Chapler, B. C.

2014-07-28

We demonstrate an electrolyte-based voltage tunable vanadium dioxide (VO{sub 2}) memory metasurface. Large spatial scale, low voltage, non-volatile switching of terahertz (THz) metasurface resonances is achieved through voltage application using an ionic gel to drive the insulator-to-metal transition in an underlying VO{sub 2} layer. Positive and negative voltage application can selectively tune the metasurface resonance into the “off” or “on” state by pushing the VO{sub 2} into a more conductive or insulating regime respectively. Compared to graphene based control devices, the relatively long saturation time of resonance modification in VO{sub 2} based devices suggests that this voltage-induced switching originates primarilymore » from electrochemical effects related to oxygen migration across the electrolyte–VO{sub 2} interface.« less

Nonlinear-optical properties of thick composite media with vanadium dioxide nanoparticles. II. Self-focusing of mid-IR radiation

NASA Astrophysics Data System (ADS)

Vinogradova, O. P.; Ostrosablina, A. A.; Sidorov, A. I.

2006-02-01

This paper presents the experimental and theoretical results of a study of the interaction of pulsed laser radiation with thick composite media containing nanoparticles of vanadium dioxide (VO2). It is established that the reversible semiconductor-metal phase transition that occurs in the VO2 nanoparticles under the action of radiation can produce self-focusing of the mid-IR radiation by the formation of a photoinduced dynamic lens. An analysis is carried out of how the radiation intensity affects the dynamics of the given process.

Action of pulse-periodic and continuous IR radiation on light-controlled vanadium dioxide mirrors

NASA Astrophysics Data System (ADS)

Danilov, Oleg B.; Sidorov, Aleksandr I.; Titterton, David H.; Tul'skii, Stanislav A.; Yachnev, Igor L.; Zhevlakov, Aleksandr P.

2001-03-01

The results of an experimental research of action of the intensive mid IR-range pulse-periodic laser radiation on VO2-mirrors are represented. The damage thresholds of VO2-mirrors are defined for pulse-periodic and continuous radiation and the analysis of the mechanism of their destruction is carried out. The results of numerical simulation of dynamics of switching of VO2-mirrors under the action of pulse-periodic radiation are presented.

Diamagnetic to ferromagnetic switching in VO2 epitaxial thin films by nanosecond excimer laser treatment

NASA Astrophysics Data System (ADS)

Molaei, R.; Bayati, R.; Nori, S.; Kumar, D.; Prater, J. T.; Narayan, J.

2013-12-01

VO2(010)/NiO(111) epitaxial heterostructures were integrated with Si(100) substrates using a cubic yttria-stabilized zirconia (c-YSZ) buffer. The epitaxial alignment across the interfaces was determined to be VO2(010)‖NiO(111)‖c-YSZ(001)‖Si(001) and VO2[100]‖NiO⟨110⟩‖c-YSZ⟨100⟩‖Si⟨100⟩. The samples were subsequently treated by a single shot of a nanosecond KrF excimer laser. Pristine as-deposited film showed diamagnetic behavior, while laser annealed sample exhibited ferromagnetic behavior. The population of majority charge carriers (e-) and electrical conductivity increased by about two orders of magnitude following laser annealing. These observations are attributed to the introduction of oxygen vacancies into the VO2 thin films and the formation of V3+ defects.

Hydrothermal growth of VO2 nanoplate thermochromic films on glass with high visible transmittance

PubMed Central

Zhang, Jiasong; Li, Jingbo; Chen, Pengwan; Rehman, Fida; Jiang, Yijie; Cao, Maosheng; Zhao, Yongjie; Jin, Haibo

2016-01-01

The preparation of thermochromic vanadium dioxide (VO2) films in an economical way is of interest to realizing the application of smart windows. Here, we reported a successful preparation of self-assembly VO2 nanoplate films on TiO2-buffered glass by a facile hydrothermal process. The VO2 films composed of triangle-shaped plates standing on substrates exhibit a self-generated porous structure, which favors the transmission of solar light. The porosity of films is easily controlled by changing the concentration of precursor solutions. Excellent thermochromic properties are observed with visible light transmittance as high as 70.3% and solar modulating efficiency up to 9.3% in a VO2 film with porosity of ~35.9%. This work demonstrates a promising technique to promote the commercial utilization of VO2 in smart windows. PMID:27296772

Suppression of Structural Phase Transition in VO2 by Epitaxial Strain in Vicinity of Metal-insulator Transition

PubMed Central

Yang, Mengmeng; Yang, Yuanjun; Bin Hong; Wang, Liangxin; Hu, Kai; Dong, Yongqi; Xu, Han; Huang, Haoliang; Zhao, Jiangtao; Chen, Haiping; Song, Li; Ju, Huanxin; Zhu, Junfa; Bao, Jun; Li, Xiaoguang; Gu, Yueliang; Yang, Tieying; Gao, Xingyu; Luo, Zhenlin; Gao, Chen

2016-01-01

Mechanism of metal-insulator transition (MIT) in strained VO2 thin films is very complicated and incompletely understood despite three scenarios with potential explanations including electronic correlation (Mott mechanism), structural transformation (Peierls theory) and collaborative Mott-Peierls transition. Herein, we have decoupled coactions of structural and electronic phase transitions across the MIT by implementing epitaxial strain on 13-nm-thick (001)-VO2 films in comparison to thicker films. The structural evolution during MIT characterized by temperature-dependent synchrotron radiation high-resolution X-ray diffraction reciprocal space mapping and Raman spectroscopy suggested that the structural phase transition in the temperature range of vicinity of the MIT is suppressed by epitaxial strain. Furthermore, temperature-dependent Ultraviolet Photoelectron Spectroscopy (UPS) revealed the changes in electron occupancy near the Fermi energy EF of V 3d orbital, implying that the electronic transition triggers the MIT in the strained films. Thus the MIT in the bi-axially strained VO2 thin films should be only driven by electronic transition without assistance of structural phase transition. Density functional theoretical calculations further confirmed that the tetragonal phase across the MIT can be both in insulating and metallic states in the strained (001)-VO2/TiO2 thin films. This work offers a better understanding of the mechanism of MIT in the strained VO2 films. PMID:26975328

Effect of the substrate on the insulator-metal transition of vanadium dioxide films

NASA Astrophysics Data System (ADS)

Kovács, György J.; Bürger, Danilo; Skorupa, Ilona; Reuther, Helfried; Heller, René; Schmidt, Heidemarie

2011-03-01

Single-phase vanadium dioxide films grown on (0001) sapphire and (001) silicon substrates show a very different insulator-metal electronic transition. A detailed description of the growth mechanisms and the substrate-film interaction is given, and the characteristics of the electronic transition are described by the morphology and grain boundary structure. (Tri-)epitaxy-stabilized columnar growth of VO2 takes place on the sapphire substrate, whereas on silicon the expected Zone II growth is identified. We have found that in the case of the Si substrate the reasons for the broader hysteresis and the lower switching amplitude are the formation of an amorphous insulating VOx (x > 2.6) phase coexisting with VO2 and the high vanadium vacancy concentration of the VO2. These phenomena are the result of the excess oxygen during the growth and the interaction between the silicon substrate and the growing film.

Role of indium tin oxide electrode on the microstructure of self-assembled WO3-BiVO4 hetero nanostructures

NASA Astrophysics Data System (ADS)

Song, Haili; Li, Chao; Van, Chien Nguyen; Dong, Wenxia; Qi, Ruijuan; Zhang, Yuanyuan; Huang, Rong; Chu, Ying-Hao; Duan, Chun-Gang

2017-11-01

Self-assembled WO3-BiVO4 nanostructured thin films were grown on a (001) yttrium stabilized zirconia (YSZ) substrate by the pulsed laser deposition method with and without the indium tin oxide (ITO) bottom electrode. Their microstructures including surface morphologies, crystalline phases, epitaxial relationships, interface structures, and composition distributions were investigated by scanning electron microscopy, high-resolution transmission electron microscopy, and X-ray energy dispersive spectroscopy. In both samples, WO3 formed nanopillars embedded into the monoclinic BiVO4 matrix with specific orientation relationships. In the sample with the ITO bottom electrode, an atomically sharp BiVO4/ITO interface was formed and the orthorhombic WO3 nanopillars were grown on a relaxed BiVO4 buffer layer with a mixed orthorhombic and hexagonal WO3 transition layer. In contrast, a thin amorphous layer appears at the interfaces between the thin film and the YSZ substrate in the sample without the ITO electrode. In addition, orthorhombic Bi2WO6 lamellar nanopillars were formed between WO3 and BiVO4 due to interdiffusion. Such a WO3-Bi2WO6-BiVO4 double heterojunction photoanode may promote the photo-generated charge separation and further improve the photoelectrochemical water splitting properties.

Combined Thermochromic And Plasmonic: Optical Responses In Novel Nanocomposite Au-VO{sub 2} Films Prepared By RF Inverted Cylindrical Magnetron Sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kana, J. B. Kana; Department of physics, University of Yaounde I, P.O. Box 812 Yaounde; Ndjaka, J. M.

2008-09-23

We prepared gold/Vanadium dioxide nanocomposites thin films by the rf reactive inverted cylindrical magnetron sputtering (ICMS) for the first time and report their enhanced surface plasmon resonance (SPR) tunable shift reversibility. ICMS has been attracting much attention for its ability for uniform coating of three-dimensional objects and high-rate deposition of dielectric materials. To investigate the optical properties of gold nanoparticles embedded in an active matrix (VO{sub 2}) composite film was synthesized on corning glass substrates for several substrate temperatures ranging from 400 deg. C to 600 deg. C. The X-ray diffraction results demonstrated that the Au and VO{sub 2} weremore » well crystallized. The optical transmission properties were measured from 300nm to 1100nm and the absorption peak due to the surface plasmon resonance (SPR) of Au nanoparticles were observed. Under external temperature stimuli, the tunable reversibility of the SPR shift was observed when the nanocomposites temperature varies from 20 deg. C to 100 deg. C. The enhancement of this shift of SPR was observed as the substrate temperature increases and it was found that the shift of SPR increased rapidly with increasing substrate temperature but then remained constant at {approx}57 nm for substrate temperature higher than 500 deg. C.« less

Metal-insulator transition properties of sputtered silicon-doped and un-doped vanadium dioxide films at terahertz range

NASA Astrophysics Data System (ADS)

Zhang, Huafu; Wu, Zhiming; Niu, Ruihua; Wu, Xuefei; he, Qiong; Jiang, Yadong

2015-03-01

Silicon-doped and un-doped vanadium dioxide (VO2) films were synthesized on high-purity single-crystal silicon substrates by means of reactive direct current magnetron sputtering followed by thermal annealing. The structure, morphology and metal-insulator transition properties of silicon-doped VO2 films at terahertz range were measured and compared to those of un-doped VO2 films. X-ray diffraction and scanning electron microscopy indicated that doping the films with silicon significantly affects the preferred crystallographic orientation and surface morphologies (grain size, pores and characteristics of grain boundaries). The temperature dependence of terahertz transmission shows that the transition temperature, hysteresis width and transition sharpness greatly depend on the silicon contents while the transition amplitude was relatively insensitive to the silicon contents. Interestingly, the VO2 film doped with a silicon content of 4.6 at.% shows excellent terahertz switching characteristics, namely a small hysteresis width of 4.5 °C, a giant transmission modulation ratio of about 82% and a relatively low transition temperature of 56.1 °C upon heating. This work experimentally indicates that silicon doping can effectively control not only the surface morphology but also the metal-insulator transition characteristics of VO2 films at terahertz range.

Strain Effects in Epitaxial VO2 Thin Films on Columnar Buffer-Layer TiO2/Al2O3 Virtual Substrates.

PubMed

Breckenfeld, Eric; Kim, Heungsoo; Burgess, Katherine; Charipar, Nicholas; Cheng, Shu-Fan; Stroud, Rhonda; Piqué, Alberto

2017-01-18

Epitaxial VO 2 /TiO 2 thin film heterostructures were grown on (100) (m-cut) Al 2 O 3 substrates via pulsed laser deposition. We have demonstrated the ability to reduce the semiconductor-metal transition (SMT) temperature of VO 2 to ∼44 °C while retaining a 4 order of magnitude SMT using the TiO 2 buffer layer. A combination of electrical transport and X-ray diffraction reciprocal space mapping studies help examine the specific strain states of VO 2 /TiO 2 /Al 2 O 3 heterostructures as a function of TiO 2 film growth temperatures. Atomic force microscopy and transmission electron microscopy analyses show that the columnar microstructure present in TiO 2 buffer films is responsible for the partially strained VO 2 film behavior and subsequently favorable transport characteristics with a lower SMT temperature. Such findings are of crucial importance for both the technological implementation of the VO 2 system, where reduction of its SMT temperature is widely sought, as well as the broader complex oxide community, where greater understanding of the evolution of microstructure, strain, and functional properties is a high priority.

Transport properties of ultra-thin VO2 films on (001) TiO2 grown by reactive molecular-beam epitaxy

NASA Astrophysics Data System (ADS)

Paik, Hanjong; Moyer, Jarrett A.; Spila, Timothy; Tashman, Joshua W.; Mundy, Julia A.; Freeman, Eugene; Shukla, Nikhil; Lapano, Jason M.; Engel-Herbert, Roman; Zander, Willi; Schubert, Jürgen; Muller, David A.; Datta, Suman; Schiffer, Peter; Schlom, Darrell G.

2015-10-01

We report the growth of (001)-oriented VO2 films as thin as 1.5 nm with abrupt and reproducible metal-insulator transitions (MIT) without a capping layer. Limitations to the growth of thinner films with sharp MITs are discussed, including the Volmer-Weber type growth mode due to the high energy of the (001) VO2 surface. Another key limitation is interdiffusion with the (001) TiO2 substrate, which we quantify using low angle annular dark field scanning transmission electron microscopy in conjunction with electron energy loss spectroscopy. We find that controlling island coalescence on the (001) surface and minimization of cation interdiffusion by using a low growth temperature followed by a brief anneal at higher temperature are crucial for realizing ultrathin VO2 films with abrupt MIT behavior.

Electric-field-driven phase transition in vanadium dioxide

NASA Astrophysics Data System (ADS)

Wu, B.; Zimmers, A.; Aubin, H.; Ghosh, R.; Liu, Y.; Lopez, R.

2011-12-01

We report on local probe measurements of current-voltage and electrostatic force-voltage characteristics of electric-field-induced insulator to metal transition in VO2 thin film. In conducting AFM mode, switching from the insulating to metallic state occurs for electric-field threshold E˜6.5×107Vm-1 at 300K. Upon lifting the tip above the sample surface, we find that the transition can also be observed through a change in electrostatic force and in tunneling current. In this noncontact regime, the transition is characterized by random telegraphic noise. These results show that electric field alone is sufficient to induce the transition; however, the electronic current provides a positive feedback effect that amplifies the phenomena.

Current induced polycrystalline-to-crystalline transformation in vanadium dioxide nanowires

PubMed Central

Jeong, Junho; Yong, Zheng; Joushaghani, Arash; Tsukernik, Alexander; Paradis, Suzanne; Alain, David; Poon, Joyce K. S.

2016-01-01

Vanadium dioxide (VO2) exhibits a reversible insulator-metal phase transition that is of significant interest in energy-efficient nanoelectronic and nanophotonic devices. In these applications, crystalline materials are usually preferred for their superior electrical transport characteristics as well as spatial homogeneity and low surface roughness over the device area for reduced scattering. Here, we show applied electrical currents can induce a permanent reconfiguration of polycrystalline VO2 nanowires into crystalline nanowires, resulting in a dramatically reduced hysteresis across the phase transition and reduced resistivity. Low currents below 3 mA were sufficient to cause the local temperature in the VO2 to reach about 1780 K to activate the irreversible polycrystalline-to-crystalline transformation. The crystallinity was confirmed by electron microscopy and diffraction analyses. This simple yet localized post-processing of insulator-metal phase transition materials may enable new methods of studying and fabricating nanoscale structures and devices formed from these materials. PMID:27892519

Active Terahertz Chiral Metamaterials Based on Phase Transition of Vanadium Dioxide (VO2).

PubMed

Wang, Shengxiang; Kang, Lei; Werner, Douglas H

2018-01-09

Compared with natural materials, chiral metamaterials have been demonstrated with orders of magnitude stronger chiroptical response, which provides the basis for applications such as ultracompact polarization components and plasmonic-enhanced biosensing. Terahertz chiral metamaterials that allow dynamic polarization control of terahertz waves are of great practical interest, but remain extremely rare. Here, we show that hybrid metamaterials integrated with vanadium dioxide (VO 2 ) exhibiting phase transition can enable dynamically tunable chiroptical responses at terahertz frequencies. In particular, a circular dichroism of ~40° and a maximum polarization rotation of ~200°/λ are observed around 0.7 THz. Furthermore, our study also reveals that the chiroptical response from the proposed metamaterials is strongly dependent on the phase transition of VO 2 , leading to actively controllable polarization states of the transmitted terahertz waves. This work paves the way for the development of terahertz metadevices capable of enabling active polarization manipulation.

The preparation of a plasmonically resonant VO2 thermochromic pigment.

PubMed

Bai, Huaping; Cortie, Michael B; Maaroof, Abbas I; Dowd, Annette; Kealley, Catherine; Smith, Geoffrey B

2009-02-25

Vanadium dioxide (VO(2)) undergoes a reversible metal-insulator transition, normally at approximately 68 degrees C. While the properties of continuous semi-transparent coatings of VO(2) are well known, there is far less information available concerning the potential use of discrete VO(2) nanoparticles as a thermochromic pigment in opaque coatings. Individual VO(2) nanoparticles undergo a localized plasmon resonance with near-infrared light at about 1100 nm and this resonance can be switched on and off by simply varying the temperature of the system. Therefore, incorporation of VO(2) nanoparticles into a coating system imbues the coating with the ability to self-adaptively modulate its own absorptive efficiency in the near-infrared. Here we examine the magnitude and control of this phenomenon. Prototype coatings are described, made using VO(2) powder produced by an improved process. The materials are characterized using calorimetry, x-ray diffraction, high-resolution scanning electron microscopy, transmission electron microscopy, and by measurement of optical properties.

Tailoring of the thermomechanical performance of VO2 nanowire bimorph actuators by ion implantation

NASA Astrophysics Data System (ADS)

Karl, H.; Peyinghaus, S. C.

2015-12-01

Vanadium dioxide VO2 nanowire bimorph actuators work on the basis of the large abrupt length change at the metal-insulator phase transition (MIT). A key parameter for the bimorph performance and efficiency is the bending curvature and the width of the temperature hysteresis of the MIT which is inherently large for single domain VO2 metal side coated nanowires. In this work we present single-clamped Ir side coated VO2 bimorphs which show unprecedented high bending curvatures of up to 105 m-1 and new type of side ion-implanted VO2 nanowire bimorph actuators with a nearly completely suppressed temperature hysteresis. It is assumed that ion-beam induced radiation defects in the VO2 crystal structure act as nucleation sites for the MIT. Moreover it will be shown that mechanical strain intentionally built-in during VO2 nanowire bimorph fabrication allows to direct phase transformation via a strain stabilized metastable phase and thus allows to control bending response on temperature change.

Fundamental Studies on Confinement Effects in Ionic Conduction and Inversion Layers in 2-D Single Crystal Free Standing Oxide Membranes

DTIC Science & Technology

2014-02-14

properties of VO2 films and membranes and compare the results with annealing VO2 films and membranes in hydrogen to provide insight into the doping...2-dimensional free standing membrane with correlated oxides may also lead to new insights into mesoscopic electronic phenomena. Vanadium oxide ( VO2 ...well as for potential applications in switching devices. While studies have been conducted on thin films, hybrid layers of VO2 supported on other

Orientation of Vanadium Dioxide Grains on Various Substrates

NASA Astrophysics Data System (ADS)

Rivera, Felipe; Davis, Robert; Vanfleet, Richard

2010-10-01

Crystalline vanadium dioxide VO2 experiences a fast and reversible semiconductor-to-metal structural phase transition near 68^oC. The changes exhibited during this phase transition comprise a well known change in resistivity of several orders of magnitude, as well as a significant drop in optical transmittance in the infrared. Due to the changes in these optical and electronic properties, vanadium dioxide shows promise as a material to be used in many applications ranging from thermochromic window coatings to optoelectronic devices. However, since there is a structural component to the phase transition of VO2, it is of interest to study the orientation of the crystalline grains deposited. Substrates such as glass, SiO2, Sapphire, and TiO2 have been used for the deposition of this material. We used orientation imaging microscopy to study and characterize the orientation of the grains deposited on several of these substrates. Here we present results on this study.

Transport properties of ultra-thin VO{sub 2} films on (001) TiO{sub 2} grown by reactive molecular-beam epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Paik, Hanjong; Tashman, Joshua W.; Moyer, Jarrett A.

2015-10-19

We report the growth of (001)-oriented VO{sub 2} films as thin as 1.5 nm with abrupt and reproducible metal-insulator transitions (MIT) without a capping layer. Limitations to the growth of thinner films with sharp MITs are discussed, including the Volmer-Weber type growth mode due to the high energy of the (001) VO{sub 2} surface. Another key limitation is interdiffusion with the (001) TiO{sub 2} substrate, which we quantify using low angle annular dark field scanning transmission electron microscopy in conjunction with electron energy loss spectroscopy. We find that controlling island coalescence on the (001) surface and minimization of cation interdiffusion bymore » using a low growth temperature followed by a brief anneal at higher temperature are crucial for realizing ultrathin VO{sub 2} films with abrupt MIT behavior.« less

Multilevel radiative thermal memory realized by the hysteretic metal-insulator transition of vanadium dioxide

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ito, Kota, E-mail: kotaito@mosk.tytlabs.co.jp; Nishikawa, Kazutaka; Iizuka, Hideo

Thermal information processing is attracting much interest as an analog of electronic computing. We experimentally demonstrated a radiative thermal memory utilizing a phase change material. The hysteretic metal-insulator transition of vanadium dioxide (VO{sub 2}) allows us to obtain a multilevel memory. We developed a Preisach model to explain the hysteretic radiative heat transfer between a VO{sub 2} film and a fused quartz substrate. The transient response of our memory predicted by the Preisach model agrees well with the measured response. Our multilevel thermal memory paves the way for thermal information processing as well as contactless thermal management.

Two-Dimensional SiO2/VO2 Photonic Crystals with Statically Visible and Dynamically Infrared Modulated for Smart Window Deployment.

PubMed

Ke, Yujie; Balin, Igal; Wang, Ning; Lu, Qi; Tok, Alfred Iing Yoong; White, Timothy J; Magdassi, Shlomo; Abdulhalim, Ibrahim; Long, Yi

2016-12-07

Two-dimensional (2D) photonic structures, widely used for generating photonic band gaps (PBG) in a variety of materials, are for the first time integrated with the temperature-dependent phase change of vanadium dioxide (VO 2 ). VO 2 possesses thermochromic properties, whose potential remains unrealized due to an undesirable yellow-brown color. Here, a SiO 2 /VO 2 core/shell 2D photonic crystal is demonstrated to exhibit static visible light tunability and dynamic near-infrared (NIR) modulation. Three-dimensional (3D) finite difference time domain (FDTD) simulations predict that the transmittance can be tuned across the visible spectrum, while maintaining good solar regulation efficiency (ΔT sol = 11.0%) and high solar transmittance (T lum = 49.6%). Experiments show that the color changes of VO 2 films are accompanied by NIR modulation. This work presents a novel way to manipulate VO 2 photonic structures to modulate light transmission as a function of wavelength at different temperatures.

Multifunctional overcoats on vanadium dioxide thermochromic thin films with enhanced luminous transmission and solar modulation, hydrophobicity and anti-oxidation

NASA Astrophysics Data System (ADS)

Liu, Chang; Wang, Ning; Long, Yi

2013-10-01

Vanadium dioxide (VO2) has a great potential to be utilized as solar energy switching glazing, even though there exist some intrinsic problems of low luminous transmittance (Tlum) and poor oxidation resistance. Si-Al based anti-reflection (AR) sol-gel coatings processed at low temperature have been developed to tackle these issues assisted by adjusting ramping rate and annealing temperature. Si-Al based AR coating gives large relative enhancement on the transmittance (22% for Tlum, 14% for the whole solar spectrum Tsol,) and successfully maintains IR contrast at 2500 nm wavelength with 18% relative increase in solar modulation (ΔTsol). The optimized Si-Al based AR coating annealing conditions are recorded at 3 °C/min ramping rate and 100 °C annealing temperature. Fluorinated-Si based gel offers a new direction of multifunctional overcoat on thermochromic smart windows with hydrophobicity (contact angle 111°), averaged 14% relatively increased luminous transmittance and enhanced oxidation resistance.

Preparation and modification of VO2 thin film on R-sapphire substrate by rapid thermal process

NASA Astrophysics Data System (ADS)

Zhu, Nai-Wei; Hu, Ming; Xia, Xiao-Xu; Wei, Xiao-Ying; Liang, Ji-Ran

2014-04-01

The VO2 thin film with high performance of metal-insulator transition (MIT) is prepared on R-sapphire substrate for the first time by magnetron sputtering with rapid thermal process (RTP). The electrical characteristic and THz transmittance of MIT in VO2 film are studied by four-point probe method and THz time domain spectrum (THz-TDS). X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), and search engine marketing (SEM) are employed to analyze the crystalline structure, valence state, surface morphology of the film. Results indicate that the properties of VO2 film which is oxidized from the metal vanadium film in oxygen atmosphere are improved with a follow-up RTP modification in nitrogen atmosphere. The crystallization and components of VO2 film are improved and the film becomes compact and uniform. A better phase transition performance is shown that the resistance changes nearly 3 orders of magnitude with a 2-°C hysteresis width and the THz transmittances are reduced by 64% and 60% in thermal and optical excitation respectively.

Oxidizing annealing effects on VO2 films with different microstructures

NASA Astrophysics Data System (ADS)

Dou, Yan-Kun; Li, Jing-Bo; Cao, Mao-Sheng; Su, De-Zhi; Rehman, Fida; Zhang, Jia-Song; Jin, Hai-Bo

2015-08-01

Vanadium dioxide (VO2) films have been prepared by direct-current magnetron sputter deposition on m-, a-, and r-plane sapphire substrates. The obtained VO2 films display different microstructures depending on the orientation of sapphire substrates, i.e. mixed microstructure of striped grains and equiaxed grains on m-sapphire, big equiaxed grains on a-sapphire and fine-grained microstructure on r-sapphire. The VO2 films were treated by the processes of oxidation in air. The electric resistance and infrared transmittance of the oxidized films were characterized to examine performance characteristics of VO2 films with different microstructures in oxidation environment. The oxidized VO2 films on m-sapphire exhibit better electrical performance than the other two films. After air oxidization for 600 s at 450 °C, the VO2 films on m-sapphire show a resistance change of 4 orders of magnitude over the semiconductor-to-metal transition. The oxidized VO2 films on a-sapphire have the highest optical modulation efficiency in infrared region compared to other samples. The different performance characteristics of VO2 films are understood in terms of microstructures, i.e. grain size, grain shape, and oxygen vacancies. The findings reveal the correlation of microstructures and performances of VO2 films, and provide useful knowledge for the design of VO2 materials to different applications.

Highly infrared sensitive VO2 nanowires for a nano-optical device.

PubMed

Bhuyan, Prabal Dev; Gupta, Sanjeev K; Kumar, Ashok; Sonvane, Yogesh; Gajjar, P N

2018-04-25

Recent studies on the electronic, magnetic and optical properties of VO2 (vanadium dioxide) materials have motivated the exploration of one dimensional VO2 nanowires. First principles calculations were performed to investigate the structural, electronic, magnetic and optical properties of the monoclinic (M) and rutile (R) phases of VO2 nanowires. The monoclinic phase shows semiconducting behaviour with a band gap of 1.17 eV, whereas the rutile phase of VO2 nanowires behaves as a spin gapless semiconducting material, as band lines cross the Fermi level due only to up spin contribution. The monoclinic structure of VO2 nanowires is found to be paramagnetic and the rutile structure shows ferromagnetic half metal behavior. The conductivity calculation for VO2 nanowires shows the metal-insulator transition (MIT) temperature to be 250 K. The possible mechanism of VO2 nanowires to be used as smart windows has been discussed, as the nanowires are highly sensitive in the infrared (IR) region. Interestingly, at low temperature, the VO2 monoclinic structure allows infrared light to be transmitted, while VO2 with the rutile phase blocks light in the IR region. Furthermore, we adsorbed CO2, N2 and SO2 gas molecules on 1D VO2 monoclinic nanowire to investigate their interaction behaviour. It was observed that the absorption and transmission properties of VO2 dramatically change upon the adsorption of CO2 and SO2 gas molecules, which is likely to open up its application as an optical gas sensor.

Self-Assembled Multilayer Structure and Enhanced Thermochromic Performance of Spinodally Decomposed TiO2-VO2 Thin Film.

PubMed

Sun, Guangyao; Zhou, Huaijuan; Cao, Xun; Li, Rong; Tazawa, Masato; Okada, Masahisa; Jin, Ping

2016-03-23

Composite films of VO2-TiO2 were deposited on sapphire (11-20) substrate by cosputtering method. Self-assembled well-ordered multilayer structure with alternating Ti- and V-rich epitaxial thin layer was obtained by thermal annealing via a spinodal decomposition mechanism. The structured thermochromic films demonstrate superior optical modulation upon phase transition, with significantly reduced transition temperature. The results provide a facile and novel approach to fabricate smart structures with excellent performance.

Vanadium dioxide-based materials for potential thermal switching applications

NASA Astrophysics Data System (ADS)

Jeong, Minyoung

One of the materials able to exhibit a transition from insulators to metals (IMT materials) is vanadium dioxide (VO2). Through IMT, VO2 shows a drop of resistivity of five orders of magnitude at a picosecond timescale. In this work, the feasibility of using VO2 as an efficient thermal switching device is discussed. Several synthesis methods (sol-gel, hot press and spark plasma sintering) were attempted to obtain VO2 sample in pellet form. From the X-ray diffraction results, it was found that spark plasma sintering (SPS) yielded the highest phase purity. Several sintering parameters such as temperature or sintering time were tested to determine the optimal sintering conditions. For better thermal switching behavior, high-energy ball milling was used to reduce lattice thermal conductivity (klat.) in the insulator phase. Ball-milling time was varied from 30 minutes to 2 hours. It was found that with increasing milling time, the k lat. was reduced. Thus, it was demonstrated that thermal switching behavior was most efficient with 2 hour-milling. To improve electronic thermal conductivity ( kelec.) in the metallic state, nano-sized copper particles were added to the VO2 system with a subtle amount variation ranging from 3at % to 5 at%. Results show that a composite with 5 at% Cu (copper) addition exhibited the largest increase in thermal conductivity ( k) in the metallic state. In addition to this, a basic mechanism behind IMT and some of the exemplary IMT-based applications were introduced.

Atomic layer deposition of VO2 films with Tetrakis-dimethyl-amino vanadium (IV) as vanadium precursor

NASA Astrophysics Data System (ADS)

Lv, Xinrui; Cao, Yunzhen; Yan, Lu; Li, Ying; Song, Lixin

2017-02-01

VO2 thin films have been grown on Si(100) (VO2/Si) and fused silica substrates (VO2/SiO2) by atomic layer deposition (ALD) using tetrakis-dimethyl-amino vanadium (IV) (TDMAV) as a novel vanadium precursor and water as reactant gas. The quartz crystal microbalance (QCM) measurement was performed to study the ALD process of VO2 thin film deposition, and a constant growth rate of about 0.95 Å/cycle was obtained at the temperature range of 150-200 °C. XRD measurement was performed to study the influence of deposition temperature and post-annealing condition on the crystallization of VO2 films, which indicated that the films deposited between 150 and 200 °C showed well crystallinity after annealing at 475 °C for 100 min in Ar atmosphere. XPS measurement verified that the vanadium oxidation state was 4+ for both as-deposited film and post-annealed VO2/Si film. AFM was applied to study the surface morphology of VO2/Si films, which showed a dense polycrystalline film with roughness of about 1 nm. The resistance of VO2/Si films deposited between 150 °C and 200 °C as a function of temperature showed similar semiconductor-to-metal transition (SMT) characters with the transition temperature for heating branch (Tc,h) of about 72 °C, a hysteresis width of about 10 °C and the resistance change of two orders of magnitude. The increase of Tc,h compared with the bulk VO2 (68 °C) may be attributed to the tensile stress along the c-axis in the film. Transmittance measurement of VO2/SiO2 films showed typical thermochromic property with a NIR switching efficiency of above 50% at 2 μm across the transition.

Sputtering Deposition of Sandwich-Structured V2O5/Metal (V, W)/V2O5 Multilayers for the Preparation of High-Performance Thermally Sensitive VO2 Thin Films with Selectivity of VO2 (B) and VO2 (M) Polymorph.

PubMed

Liu, Hengwu; Wan, Dongyun; Ishaq, Ahmad; Chen, Lanli; Guo, Beibei; Shi, Siqi; Luo, Hongjie; Gao, Yanfeng

2016-03-01

For specific application to an uncooled infrared detector, VO2 thin films should have a series of characteristics including purposefully chosen polymorphs, accurate stoichiometry, phase stabilization, a high temperature-coefficient of resistance (TCR), and suitable square-resistance. This work reports controllable preparation of high-performance VO2 films via post annealing of a sandwich-structured V2O5/metal (V, W)/V2O5 multilayer precursor, which was deposited by RF magnetron sputtering. This sandwich structure can dynamically regulate oxygen contents and doping element levels in the films, enabling us to achieve accurate regulation of stoichiometry and polymorphs. The precursor films undergo a B to M phase transition depending on the quantity of the metal layers. At the thickness of the metal layer below a limitation, the resulting film after heat treatment was VO2 (B), and above the limitation, the product was VO2 (M). The optical modulation of the VO2 (M) in the near-infrared region can be tuned from 1.2 to 39.8% (ΔT2000 nm). TCR values can range from -1.89 to -4.29%/K and the square-resistances at room temperature (R0) from 69.68 to 12.63 kΩ. The simplicity in phase regulation of the present method and the superior optical and electrical properties of the films may allow its wide applications in thermo-opto-electro sensing devices.

Ultrafast Silicon-based Modulators using Optical Switching of Vanadium Dioxide

DTIC Science & Technology

2014-12-04

demonstrated by using photothermal heating to induce the VO2 semiconductor-to- metal phase transition and modulate the transmitted optical signal...speeds. By utilizing the sub-picosecond semiconductor-to- metal transition (SMT) in VO2 as the active switching mechanism that enables direct... metallic phases. The steep slope, high contrast, and relatively narrow hysteresis exhibited by these reflectivity measurements indicate the high quality

Attosecond transient absorption instrumentation for thin film materials: Phase transitions, heat dissipation, signal stabilization, timing correction, and rapid sample rotation.

PubMed

Jager, Marieke F; Ott, Christian; Kaplan, Christopher J; Kraus, Peter M; Neumark, Daniel M; Leone, Stephen R

2018-01-01

We present an extreme ultraviolet (XUV) transient absorption apparatus tailored to attosecond and femtosecond measurements on bulk solid-state thin-film samples, specifically when the sample dynamics are sensitive to heating effects. The setup combines methodology for stabilizing sub-femtosecond time-resolution measurements over 48 h and techniques for mitigating heat buildup in temperature-dependent samples. Single-point beam stabilization in pump and probe arms and periodic time-zero reference measurements are described for accurate timing and stabilization. A hollow-shaft motor configuration for rapid sample rotation, raster scanning capability, and additional diagnostics are described for heat mitigation. Heat transfer simulations performed using a finite element analysis allow comparison of sample rotation and traditional raster scanning techniques for 100 Hz pulsed laser measurements on vanadium dioxide, a material that undergoes an insulator-to-metal transition at a modest temperature of 340 K. Experimental results are presented confirming that the vanadium dioxide (VO 2 ) sample cannot cool below its phase transition temperature between laser pulses without rapid rotation, in agreement with the simulations. The findings indicate the stringent conditions required to perform rigorous broadband XUV time-resolved absorption measurements on bulk solid-state samples, particularly those with temperature sensitivity, and elucidate a clear methodology to perform them.

Attosecond transient absorption instrumentation for thin film materials: Phase transitions, heat dissipation, signal stabilization, timing correction, and rapid sample rotation

NASA Astrophysics Data System (ADS)

Jager, Marieke F.; Ott, Christian; Kaplan, Christopher J.; Kraus, Peter M.; Neumark, Daniel M.; Leone, Stephen R.

2018-01-01

We present an extreme ultraviolet (XUV) transient absorption apparatus tailored to attosecond and femtosecond measurements on bulk solid-state thin-film samples, specifically when the sample dynamics are sensitive to heating effects. The setup combines methodology for stabilizing sub-femtosecond time-resolution measurements over 48 h and techniques for mitigating heat buildup in temperature-dependent samples. Single-point beam stabilization in pump and probe arms and periodic time-zero reference measurements are described for accurate timing and stabilization. A hollow-shaft motor configuration for rapid sample rotation, raster scanning capability, and additional diagnostics are described for heat mitigation. Heat transfer simulations performed using a finite element analysis allow comparison of sample rotation and traditional raster scanning techniques for 100 Hz pulsed laser measurements on vanadium dioxide, a material that undergoes an insulator-to-metal transition at a modest temperature of 340 K. Experimental results are presented confirming that the vanadium dioxide (VO2) sample cannot cool below its phase transition temperature between laser pulses without rapid rotation, in agreement with the simulations. The findings indicate the stringent conditions required to perform rigorous broadband XUV time-resolved absorption measurements on bulk solid-state samples, particularly those with temperature sensitivity, and elucidate a clear methodology to perform them.

Hydrogen-induced morphotropic phase transformation of single-crystalline vanadium dioxide nanobeams.

PubMed

Hong, Woong-Ki; Park, Jong Bae; Yoon, Jongwon; Kim, Bong-Joong; Sohn, Jung Inn; Lee, Young Boo; Bae, Tae-Sung; Chang, Sung-Jin; Huh, Yun Suk; Son, Byoungchul; Stach, Eric A; Lee, Takhee; Welland, Mark E

2013-04-10

We report a morphotropic phase transformation in vanadium dioxide (VO2) nanobeams annealed in a high-pressure hydrogen gas, which leads to the stabilization of metallic phases. Structural analyses show that the annealed VO2 nanobeams are hexagonal-close-packed structures with roughened surfaces at room temperature, unlike as-grown VO2 nanobeams with the monoclinic structure and with clean surfaces. Quantitative chemical examination reveals that the hydrogen significantly reduces oxygen in the nanobeams with characteristic nonlinear reduction kinetics which depend on the annealing time. Surprisingly, the work function and the electrical resistance of the reduced nanobeams follow a similar trend to the compositional variation due mainly to the oxygen-deficiency-related defects formed at the roughened surfaces. The electronic transport characteristics indicate that the reduced nanobeams are metallic over a large range of temperatures (room temperature to 383 K). Our results demonstrate the interplay between oxygen deficiency and structural/electronic phase transitions, with implications for engineering electronic properties in vanadium oxide systems.

Investigation on onset voltage and conduction channel temperature in voltage-induced metal-insulator transition of vanadium dioxide

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yoon, Joonseok; Kim, Howon; Ju, Honglyoul, E-mail: tesl@yonsei.ac.kr

2016-03-28

The characteristics of onset voltages and conduction channel temperatures in the metal-insulator transition (MIT) of vanadium dioxide (VO{sub 2}) devices are investigated as a function of dimensions and ambient temperature. The MIT onset voltage varies from 18 V to 199 V as the device length increases from 5 to 80 μm at a fixed width of 100 μm. The estimated temperature at local conduction channel increases from 110 to 370 °C, which is higher than the MIT temperature (67 °C) of VO{sub 2}. A simple Joule-heating model is employed to explain voltage-induced MIT as well as to estimate temperatures of conduction channel appearing after MIT inmore » various-sized devices. Our findings on VO{sub 2} can be applied to micro- to nano-size tunable heating devices, e.g., microscale scanning thermal cantilevers and gas sensors.« less

Optical bistability and optical response of an infrared quantum dot hybridized to VO2 nanoparticle

NASA Astrophysics Data System (ADS)

Zamani, Naser; Hatef, Ali; Nadgaran, Hamid; Keshavarz, Alireza

2017-08-01

In this work, we theoretically investigate optical bistability and optical response of a hybrid system consisting of semiconductor quantum dot (SQD) coupled with a vanadium dioxide nanoparticle (VO2NP) in the infrared (IR) regime. The VO2 material exists in semiconductor and metallic phases below and above the critical temperature, respectively where the particle optical properties dramatically change during this phase transition. In our calculations a filling fraction factor controls the VO2NP phase transition when the hybrid system interacts with a laser field. We demonstrate that the switch-up threshold for optical bistability is strongly controlled by filling fraction without changing the structure of the hybrid system. Also, it is shown that, the threshold of optical bistability increases when the VO2NP phases changes from semiconductor to metallic phase. The presented results have the potential to be applied in designing optical switching and optical storage.

Influence of oxygen flow rate on metal-insulator transition of vanadium oxide thin films grown by RF magnetron sputtering

NASA Astrophysics Data System (ADS)

Ma, Xu; Liu, Xinkun; Li, Haizhu; Zhang, Angran; Huang, Mingju

2017-03-01

High-quality vanadium oxide ( VO2) films have been fabricated on Si (111) substrates by radio frequency (RF) magnetron sputtering deposition method. The sheet resistance of VO2 has a significant change (close to 5 orders of magnitude) in the process of the metal-insulator phase transition (MIT). The field emission-scanning electron microscope (FE-SEM) results show the grain size of VO2 thin films is larger with the increase of oxygen flow. The X-ray diffraction (XRD) results indicate the thin films fabricated at different oxygen flow rates grow along the (011) crystalline orientation. As the oxygen flow rate increases from 3 sccm to 6 sccm, the phase transition temperature of the films reduces from 341 to 320 K, the width of the thermal hysteresis loop decreases from 32 to 9 K. The thin films fabricated in the condition of 5 sccm have a high temperature coefficient of resistance (TCR) -3.455%/K with a small resistivity of 2.795 ρ/Ω cm.

Etching Characteristics of VO2 Thin Films Using Inductively Coupled Cl2/Ar Plasma

NASA Astrophysics Data System (ADS)

Ham, Yong-Hyun; Efremov, Alexander; Min, Nam-Ki; Lee, Hyun Woo; Yun, Sun Jin; Kwon, Kwang-Ho

2009-08-01

A study on both etching characteristics and mechanism of VO2 thin films in the Cl2/Ar inductively coupled plasma was carried. The variable parameters were gas pressure (4-10 mTorr) and input power (400-700 W) at fixed bias power of 150 W and initial mixture composition of 25% Cl2 + 75% Ar. It was found that an increase in both gas pressure and input power results in increasing VO2 etch rate while the etch selectivity over photoresist keeps a near to constant values. Plasma diagnostics by Langmuir probes and zero-dimensional plasma model provided the data on plasma parameters, steady-state densities and fluxes of active species on the etched surface. The model-based analysis of the etch mechanism showed that, for the given ranges of operating conditions, the VO2 etch kinetics corresponds to the transitional regime of ion-assisted chemical reaction and is influenced by both neutral and ion fluxes with a higher sensitivity to the neutral flux.

Nonlinear optical properties of thick composite media with vanadium dioxide nanoparticles. I. Self-defocusing of radiation in the visible and near-IR regions

NASA Astrophysics Data System (ADS)

Ostrosablina, A. A.; Sidorov, A. I.

2005-07-01

This paper presents the experimental and theoretical results of a study of the interaction of pulsed laser radiation with thick composite media containing nanoparticles of vanadium dioxide (VO2). It establishes that the reversible semiconductor-metal phase transition that occurs in VO2 nanoparticles under the action of radiation can produce self-defocusing of radiation in the visible and near-IR regions because of the formation of a photoinduced dynamic lens. An analysis is carried out of how the radiation intensity affects the dynamics of these processes. It is shown that photoinduced absorption and scattering play a role in forming the nonlinear optical response.

VO.sub.2 precipitates for self-protected optical surfaces

DOEpatents

Gea, Laurence A.; Boatner, Lynn A.

1999-01-01

A method for forming crystallographically coherent precipitates of vanadium dioxide in the near-surface region of sapphire and the resulting product is disclosed. Ions of vanadium and oxygen are stoichiometrically implanted into a sapphire substrate (Al.sub.2 O.sub.3), and subsequently annealed to form vanadium dioxide precipitates in the substrate. The embedded VO.sub.2 precipitates, which are three-dimensionally oriented with respect to the crystal axes of the Al.sub.2 O.sub.3 host lattice, undergo a first-order monoclinic-to-tetragonal (and also semiconducting-to-metallic) phase transition at .about.77.degree. C. This transformation is accompanied by a significant variation in the optical transmission of the implanted region and results in the formation of an optically active, thermally "switchable" surface region on Al.sub.2 O.sub.3.

Supercritical temperature synthesis of fluorine-doped VO2(M) nanoparticle with improved thermochromic property

NASA Astrophysics Data System (ADS)

Riapanitra, Anung; Asakura, Yusuke; Cao, Wenbin; Noda, Yasuto; Yin, Shu

2018-06-01

Fluorine-doped VO2(M) nanoparticles have been successfully synthesized using the hydrothermal method at a supercritical temperature of 490 °C. The pristine VO2(M) has the critical phase transformation temperature of 64 °C. The morphology and homogeneity of the monoclinic structure VO2(M) were adopted by the fluorine-doped system. The obtained particle size of the samples is smaller at the higher concentration of anion doping. The best reduction of critical temperature was achieved by fluorine doping of 0.13% up to 48 °C. The thin films of the fluorine-doped VO2(M) showed pronounced thermochromic property and therefore are suitable for smart window applications.

Evolution of Structural and Electrical Properties of Oxygen-Deficient VO2 under Low Temperature Heating Process.

PubMed

Zhang, Jiasong; Zhao, Zhengjing; Li, Jingbo; Jin, Haibo; Rehman, Fida; Chen, Pengwan; Jiang, Yijie; Chen, Chunxu; Cao, Maosheng; Zhao, Yongjie

2017-08-16

Structural stability and functional performances of vanadium dioxide (VO 2 ) are strongly influenced by oxygen vacancies. However, the mechanism of metal-insulator transition (MIT) influenced by defects is still under debate. Here, we study the evolution of structure and electrical property of oxygen-deficient VO 2 by a low temperature annealing process (LTP) based on a truss-structured VO 2 nanonet. The oxygenation process of the oxygen-deficient VO 2 is greatly prolonged, which enables us to probe the gradual change of properties of the oxygen-deficient VO 2 . A continuous lattice reduction is observed during LTP. No recrystallization and structural collapse of the VO 2 nanonet can be found after LTP. The valence-band X-ray photoelectron spectroscopy (XPS) measurements indicate that the oxygen deficiency strongly affects the energy level of the valence band edge. Correspondingly, the resistance changes of the VO 2 films from 1 to 4.5 orders of magnitude are achieved by LTP. The effect of oxygen vacancy on the electric field driven MIT is investigated. The threshold value of voltage triggering the MIT decreases with increasing the oxygen vacancy concentration. This work demonstrates a novel and effective way to control the content of oxygen vacancies in VO 2 and the obvious impact of oxygen vacancy on MIT, facilitating further research on the role of oxygen vacancy in structure and MIT of VO 2 , which is important for the deep understanding of MIT and exploiting innovative functional application of VO 2 .

Preparation and investigation of sputtered vanadium dioxide films with large phase-transition hysteresis loops

NASA Astrophysics Data System (ADS)

Zhang, Huafu; Wu, Zhiming; He, Qiong; Jiang, Yadong

2013-07-01

Vanadium dioxide (VO2) films with large phase-transition hysteresis loops were fabricated on glass substrates by reactive direct current (DC) magnetron sputtering in Ar/O2 atmosphere and subsequent in situ annealing process in pure oxygen. The crystal structure, chemical composition, morphology and metal-insulator transition (MIT) properties of the deposited films were investigated. The results reveal that the films show a polycrystalline nature with a (0 1 1) preferred orientation and consist of small spheroidal nanoparticles. All the deposited VO2 films show large hysteresis loops due to the small density of nucleating defects and the large interfacial energies, which are determined by the characteristics of the particles in the films, namely the small transversal grain size and the spheroidal shape. The film comprising the smallest spheroidal nanoparticles not only shows a large hysteresis width of 36.3 °C but also shows a low transition temperature of 32.2 °C upon cooling. This experiment facilitates the civilian applications of the VO2 films on glass substrates in optical storage-type devices.

Localized surface plasmon resonance modulation of totally encapsulated VO2/Au/VO2 composite structure

NASA Astrophysics Data System (ADS)

Liang, Jiran; Guo, Jinbang; Zhao, Yirui; Zhang, Ying; Su, Tianyu

2018-07-01

We design and fabricate a totally encapsulated VO2/Au/VO2 composite structure which is aimed to improve the tunability of the localized surface plasmon resonance (LSPR) peak. In this work, the structure will ensure all the Au NPs’ resonant electric field area is filled with VO2. The modulation range of the totally encapsulated structure is larger than that of the semi-coated structure. To further improve the modulation range, we also explore the VO2 thickness dependence of the structure’s LSPR modulation. With the increase of the top layer VO2 thin film thickness, the modulation range becomes larger. When the thickness is about 80 nm, the absorption peak achieves a largest shift of 112 nm. FDTD solution and equivalent model of series capacitor are used to explain the phenomenon. These results will contribute to the area of metamaterial electromagnetic wave absorber and other fields.

Localized surface plasmon resonance modulation of totally encapsulated VO2/Au/VO2 composite structure.

PubMed

Liang, Jiran; Guo, Jinbang; Zhao, Yirui; Zhang, Ying; Su, Tianyu

2018-07-06

We design and fabricate a totally encapsulated VO 2 /Au/VO 2 composite structure which is aimed to improve the tunability of the localized surface plasmon resonance (LSPR) peak. In this work, the structure will ensure all the Au NPs' resonant electric field area is filled with VO 2 . The modulation range of the totally encapsulated structure is larger than that of the semi-coated structure. To further improve the modulation range, we also explore the VO 2 thickness dependence of the structure's LSPR modulation. With the increase of the top layer VO 2 thin film thickness, the modulation range becomes larger. When the thickness is about 80 nm, the absorption peak achieves a largest shift of 112 nm. FDTD solution and equivalent model of series capacitor are used to explain the phenomenon. These results will contribute to the area of metamaterial electromagnetic wave absorber and other fields.

Fast Adaptive Thermal Camouflage Based on Flexible VO₂/Graphene/CNT Thin Films.

PubMed

Xiao, Lin; Ma, He; Liu, Junku; Zhao, Wei; Jia, Yi; Zhao, Qiang; Liu, Kai; Wu, Yang; Wei, Yang; Fan, Shoushan; Jiang, Kaili

2015-12-09

Adaptive camouflage in thermal imaging, a form of cloaking technology capable of blending naturally into the surrounding environment, has been a great challenge in the past decades. Emissivity engineering for thermal camouflage is regarded as a more promising way compared to merely temperature controlling that has to dissipate a large amount of excessive heat. However, practical devices with an active modulation of emissivity have yet to be well explored. In this letter we demonstrate an active cloaking device capable of efficient thermal radiance control, which consists of a vanadium dioxide (VO2) layer, with a negative differential thermal emissivity, coated on a graphene/carbon nanotube (CNT) thin film. A slight joule heating drastically changes the emissivity of the device, achieving rapid switchable thermal camouflage with a low power consumption and excellent reliability. It is believed that this device will find wide applications not only in artificial systems for infrared camouflage or cloaking but also in energy-saving smart windows and thermo-optical modulators.

Ultrafast far-infrared studies of vanadates &mdash Multiple routes for an insulator to metal transition

NASA Astrophysics Data System (ADS)

Liu, Mengkun

The metal insulator transition in vanadates has been studied for decades and yet new discoveries still spring up revealing new physics, especially among two of the most studied members: Vanadium sesquioxide (V20 3) and Vanadium dioxide (VO2). Although subtleties abound, both of the materials have first order insulator to metal phase transitions that are considered to be related to strong electron-electron (e-e) correlation. Further, ultrafast spectroscopy of strongly correlated materials has generated great interest in the field given the potential to dynamically distinguish the difference between electronic (spin) response versus lattice responses due to the associated characteristic energy and time scales. In this thesis, I mainly focus on utilizing ultrafast optical and THz spectroscopy to study phase transition dynamics in high quality V20 3 and VO2 thin films epitaxially grown on different substrates. The main findings of the thesis are: (1) Despite the fact that the insulator to metal transition (IMT) in V203 is electron-correlation driven, lattice distortion plays an important role. Coherent oscillations in the far-infrared conductivity are observed resulting from coherent acoustic phonon modulation of the bandwidth W. The same order of lattice distortion induces less of an effect on the electron transport in VO2 in comparison to V203. This is directly related to the difference in latent heat of the phase transitions in VO2 and V203. (2) It is possible for the IMT to occur with very little structural change in epitaxial strained VO2 films, like in the case of Cr doped or strained V203. However, in V02, this necessitates a large strain which is only possible by clamping to a substrate with larger c axis parameter through epitaxial growth. This is demonstrated for VO 2 films on TiO2 substrates. (3) Initiating an ultrafast photo-induced insulator-to-metal transition (IMT) is not only possible with above bandgap excitation, but also possible with high-field far-infrared excitation. With the help of the field enhancement in metamaterial split ring resonator gaps, we obtain picosecond THz electric field transients of several MV/cm which is sufficient to drive the insulator to metal transition in V02.

Origin of phase transition in VO2

NASA Astrophysics Data System (ADS)

Basu, Raktima; Sardar, Manas; Dhara, Sandip

2018-04-01

Vanadium dioxide (VO2) exhibits a reversible first-order metal to insulator transition (MIT) along with a structural phase transition (SPT) from monoclinic M1 to rutile tetragonal R via another two intermediate phases of monoclinic M2 and triclinic T at a technologically important temperature of 340K. In the present work, besides synthesizing M1 phase of VO2, we also stabilized M2 and T phases at room temperature by introducing native defects in the system and observed an increase in transition temperature with increase in native defects. Raman spectroscopic measurements were carried out to confirm the pure VO2 phases. Since the MIT is accompanied by SPT in these systems, the origin of the phase transition is still under debate. The controversy between MIT and SPT, whether electron-phonon coupling or strong electron-electron correlation triggers the phase transition in VO2 is also resolved by examining the presence of intermediate phase M2 during phase transition.

Preparation, Characterization and Thermo-Chromic Properties of EVA/VO2 Laminate Films for Smart Window Applications and Energy Efficiency in Building

PubMed Central

Srirodpai, Onruthai; Wootthikanokkhan, Jatuphorn; Nawalertpanya, Saiwan; Yuwawech, Kitti; Meeyoo, Vissanu

2017-01-01

Thermochromic films based on vanadium dioxide (VO2)/ethylene vinyl acetate copolymer (EVA) composite were developed. The monoclinic VO2 particles was firstly prepared via hydrothermal and calcination processes. The effects of hydrothermal time and tungsten doping agent on crystal structure and morphology of the calcined metal oxides were reported. After that, 1 wt % of the prepared VO2 powder was mixed with EVA compound, using two different mixing processes. It was found that mechanical properties of the EVA/VO2 films prepared by the melt process were superior to those of which prepared by the solution process. On the other hand, percentage visible light transmittance of the solution casted EVA/VO2 film was greater than that of the melt processed composite film. This was related to the different gel content of EVA rubber and state of dispersion and distribution of VO2 within the polymer matrix phase. Thermochromic behaviors and heat reflectance of the EVA/VO2 film were also verified. In overall, this study demonstrated that it was possible to develop a thermochromic film using the polymer composite approach. In this regard, the mixing condition was found to be one of the most important factors affecting morphology and thermo-mechanical properties of the films. PMID:28772413

Hydrothermal Synthesis of VO2 Polymorphs: Advantages, Challenges and Prospects for the Application of Energy Efficient Smart Windows.

PubMed

Li, Ming; Magdassi, Shlomo; Gao, Yanfeng; Long, Yi

2017-09-01

Vanadium dioxide (VO 2 ) is a widely studied inorganic phase change material, which has a reversible phase transition from semiconducting monoclinic to metallic rutile phase at a critical temperature of τ c ≈ 68 °C. The abrupt decrease of infrared transmittance in the metallic phase makes VO 2 a potential candidate for thermochromic energy efficient windows to cut down building energy consumption. However, there are three long-standing issues that hindered its application in energy efficient windows: high τ c , low luminous transmittance (T lum ), and undesirable solar modulation ability (ΔT sol ). Many approaches, including nano-thermochromism, porous films, biomimetic surface reconstruction, gridded structures, antireflective overcoatings, etc, have been proposed to tackle these issues. The first approach-nano-thermochromism-which is to integrate VO 2 nanoparticles in a transparent matrix, outperforms the rest; while the thermochromic performance is determined by particle size, stoichiometry, and crystallinity. A hydrothermal method is the most common method to fabricate high-quality VO 2 nanoparticles, and has its own advantages of large-scale synthesis and precise phase control of VO 2 . This Review focuses on hydrothermal synthesis, physical properties of VO 2 polymorphs, and their transformation to thermochromic VO 2 (M), and discusses the advantages, challenges, and prospects of VO 2 (M) in energy-efficient smart windows application. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Electric-field-driven phase transition in vanadium dioxide

NASA Astrophysics Data System (ADS)

Wu, B.; Zimmers, A.; Aubin, H.; Gosh, R.; Liu, Y.; Lopez, R.

2011-03-01

In recent years, various strongly correlated materials have shown sharp switching from insulator to metallic state in their I(V) transport curves. Determining if this is purely an out of equilibrium phenomena (due to the strong electric field applied throughout the sample) or simply a Joule heating issue is still an open question. To address this issue, we have first measured local I(V) curves in vanadium dioxide (VO2) Mott insulator at various temperatures using a conducting AFM setup and determined the voltage threshold of the insulator to metal switching. By lifting the tip above the surface (> 35 nm) , wehavethenmeasuredthepurelyelectrostaticforcebetweenthetipandsamplesurfaceasthevoltagebetweenthesetwowasincreased . Inaverynarrowtemperaturerange (below 360 K) , atipheightrange (below 60 nm) andavoltageappliedrange (above 8 V) , weobservedswitchingintheelectrostaticforce (telegraphicnoisevs . timeandvs . voltage) . ThispurelyelectricfieldeffectshowsthattheswitchingphenomenonisstillpresentevenwithoutJouleheatinginVO 2 .

Invited Article: An active terahertz polarization converter employing vanadium dioxide and a metal wire grating in total internal reflection geometry

NASA Astrophysics Data System (ADS)

Liu, Xudong; Chen, Xuequan; Parrott, Edward P. J.; Han, Chunrui; Humbert, Georges; Crunteanu, Aurelian; Pickwell-MacPherson, Emma

2018-05-01

Active broadband terahertz (THz) polarization manipulation devices are challenging to realize, but also of great demand in broadband terahertz systems. Vanadium dioxide (VO2) shows a promising phase transition for active control of THz waves and provides broadband polarization characteristics when integrated within grating-type structures. We creatively combine a VO2-based grating structure with a total internal reflection (TIR) geometry providing a novel interaction mechanism between the electromagnetic waves and the device, to realize a powerful active broadband THz polarization-controlling device. The device is based on a Si-substrate coated with a VO2 layer and a metal grating structure on top, attached to a prism for generating the TIR condition on the Si-VO2-grating interface. The grating is connected to electrodes for electrically switching the VO2 between its insulating and conducting phases. By properly selecting the incident angle of the THz waves, the grating direction, and the incident polarization state, we first achieved a broadband intensity modulator under a fused silica prism with an average modulation depth of 99.75% in the 0.2-1.1 THz region. Additionally, we realized an active ultra-broadband quarter-wave converter under a Si prism that can be switched between a 45° linear rotator and a quarter wave converter in the 0.8-1.5 THz region. This is the first demonstration of an active quarter-wave converter with ultra-broad bandwidth performance. Our work shows a highly flexible and multifunctional polarization-controlling device for broadband THz applications.

Evolution of Metallicity in Vanadium Dioxide by Creation of Oxygen Vacancies

NASA Astrophysics Data System (ADS)

Zhang, Zhen; Zuo, Fan; Wan, Chenghao; Dutta, Aveek; Kim, Jongbum; Rensberg, Jura; Nawrodt, Ronny; Park, Helen Hejin; Larrabee, Thomas J.; Guan, Xiaofei; Zhou, You; Prokes, S. M.; Ronning, Carsten; Shalaev, Vladimir M.; Boltasseva, Alexandra; Kats, Mikhail A.; Ramanathan, Shriram

2017-03-01

Tuning of the electronic state of correlated materials is key to their eventual use in advanced electronics and photonics. The prototypical correlated oxide (VO2 ) is insulating at room temperature and transforms to a metallic state when heated to 67 °C (340 K). We report the emergence of a metallic state that is preserved down to 1.8 K by annealing thin films of VO2 at an ultralow oxygen partial pressure (PO2˜10-24 atm ). The films can be reverted back to their original state by annealing in oxygen, and this process can be iterated multiple times. The metallic phase created by oxygen deficiency has a tetragonal rutile structure and contains a large number of oxygen vacancies far beyond the solubility at equilibrium (greater than approximately 50 times). The oxygen starvation reduces the oxidation state of vanadium from V4 + to V3 + and leads to the metallization. The extent of resistance reduction (concurrent with tuning of optical properties) can be controlled by the time-temperature envelope of the annealing conditions since the process is diffusionally driven. This experimental platform, which can extensively tune oxygen vacancies in correlated oxides, provides an approach to study emergent phases and defect-mediated adaptive electronic and structural phase boundary crossovers.

VO{sub 2} precipitates for self-protected optical surfaces

DOEpatents

Gea, L.A.; Boatner, L.A.

1999-03-23

A method for forming crystallographically coherent precipitates of vanadium dioxide in the near-surface region of sapphire and the resulting product is disclosed. Ions of vanadium and oxygen are stoichiometrically implanted into a sapphire substrate (Al{sub 2}O{sub 3}), and subsequently annealed to form vanadium dioxide precipitates in the substrate. The embedded VO{sub 2} precipitates, which are three-dimensionally oriented with respect to the crystal axes of the Al{sub 2}O{sub 3} host lattice, undergo a first-order monoclinic-to-tetragonal (and also semiconducting-to-metallic) phase transition at ca. 77 C. This transformation is accompanied by a significant variation in the optical transmission of the implanted region and results in the formation of an optically active, thermally ``switchable`` surface region on Al{sub 2}O{sub 3}. 5 figs.

Insulating phases of vanadium dioxide are Mott-Hubbard insulators

DOE PAGES

Huffman, T. J.; Hendriks, C.; Walter, E. J.; ...

2017-02-15

Here, we present comprehensive broadband optical spectroscopy data on two insulating phases of vanadium dioxide (VO 2): monoclinic M 2 and triclinic. The main result of our work is that the energy gap and the electronic structure are essentially unaltered by the first-order structural phase transition between the M 2 and triclinic phases. Moreover, the optical interband features in the M 2 and triclinic phases are remarkably similar to those observed in the well-studied monoclinic M 1 insulating phase of VO 2. As the energy gap is insensitive to the different lattice structures of the three insulating phases, we rulemore » out vanadium-vanadium pairing (the Peierls component) as the dominant contributor to the opening of the gap. Rather, the energy gap arises primarily from intra-atomic Coulomb correlations.« less

Reduction of V2O5 thin films deposited by aqueous sol-gel method to VO2(B) and investigation of its photocatalytic activity

NASA Astrophysics Data System (ADS)

Monfort, Olivier; Roch, Tomas; Satrapinskyy, Leonid; Gregor, Maros; Plecenik, Tomas; Plecenik, Andrej; Plesch, Gustav

2014-12-01

A way of preparation of VO2(B) thin films by reduction of V2O5 films synthesized from an aqueous sol-gel system has been developed and photocatalytic properties of the obtained films were studied. The reduction was performed by annealing of the V2O5 film in vacuum as well as in H2/Ar atmosphere, which was followed by temperature dependent XRD. It has been shown that the reduction is influenced by the layered-structure of the vanadium oxides. It is a two-step process, where the mixed-valence vanadium oxide V4O9 is first formed before reaching the VO2(B) phase. The film microstructure was characterized by SEM and AFM and the valence states of vanadium in VO2(B) films were evaluated by XPS. The VO2(B) polymorph shows an energy band-gap around 2.8 eV and it exhibits photocatalytic properties. It was measured by following the degradation of rhodamine B under UVA as well as metalhalogenide lamp irradiation, which has similar spectral distribution as natural sunlight. The VO2(B) films show distinct photoactivities under both lamps, although they were found to be more active under the UVA irradiation. The film annealed under reducing hydrogen atmosphere, which exhibits higher granularity and surface roughness, shows higher photoactivity than the vacuum-annealed film.

High pressure spectroscopic studies of phase transition in VO2

NASA Astrophysics Data System (ADS)

Basu, Raktima; Mishra, K. K.; Ravindran, T. R.; Dhara, Sandip

2018-04-01

Vanadium dioxide (VO2) exhibits a reversible first-order metal to insulator transition (MIT) at a technologically important temperature of 340K. A structural phase transition (SPT) from monoclinic M1 to rutile tetragonal R is also reported via another two intermediate phases of monoclinic M2 and triclinic T. Metastable monoclinic M2 phase of VO2 was synthesized by Mg doping in the vapour transport process. Raman spectroscopic measurements were carried out at high pressure on V1-xMgxO2 microrods. Two reversible structural phase transitions from monoclinic M2 to triclinic T at 1.6 GPa and T to monoclinic M1 at 3.2 GPa are observed and are explained by structural relaxation of the strained phases.

Ambiguous Role of Growth-Induced Defects on the Semiconductor-to-Metal Characteristics in Epitaxial VO2/TiO2 Thin Films.

PubMed

Mihailescu, Cristian N; Symeou, Elli; Svoukis, Efthymios; Negrea, Raluca F; Ghica, Corneliu; Teodorescu, Valentin; Tanase, Liviu C; Negrila, Catalin; Giapintzakis, John

2018-04-25

Controlling the semiconductor-to-metal transition temperature in epitaxial VO 2 thin films remains an unresolved question both at the fundamental as well as the application level. Within the scope of this work, the effects of growth temperature on the structure, chemical composition, interface coherency and electrical characteristics of rutile VO 2 epitaxial thin films grown on TiO 2 substrates are investigated. It is hereby deduced that the transition temperature is lower than the bulk value of 340 K. However, it is found to approach this value as a function of increased growth temperature even though it is accompanied by a contraction along the V 4+ -V 4+ bond direction, the crystallographic c-axis lattice parameter. Additionally, it is demonstrated that films grown at low substrate temperatures exhibit a relaxed state and a strongly reduced transition temperature. It is suggested that, besides thermal and epitaxial strain, growth-induced defects may strongly affect the electronic phase transition. The results of this work reveal the difficulty in extracting the intrinsic material response to strain, when the exact contribution of all strain sources cannot be effectively determined. The findings also bear implications on the limitations in obtaining the recently predicted novel semi-Dirac point phase in VO 2 /TiO 2 multilayer structures.

Effects of postdeposition annealing on the metal-insulator transition of VO2-x thin films prepared by RF magnetron sputtering

NASA Astrophysics Data System (ADS)

Liu, Shiu-Jen; Su, Yu-Tai; Hsieh, Juang-Hsin

2014-03-01

We report the fabrication of textured VO2-x films on c-cut sapphire substrates by postdeposition annealing of V2O3 films prepared by RF magnetron sputtering using V2O3 as the target. Although the prepared VO2-x films are expected to be oxygen-deficient, overoxidation on the film surface was revealed by X-ray photoelectron spectroscopy. The metal-insulator transition (MIT) characteristics of the VO2-x films were investigated. MIT parameters including the transition temperature, transition sharpness, and hysteresis width of the VO2-x films were manipulated by varying the oxygen pressure during postdeposition annealing. The suppression of optical transmittance in the near-infrared region was observed by increasing the temperature through the MIT.

Template-free synthesis of vanadium oxides nanobelt arrays as high-rate cathode materials for lithium ion batteries

NASA Astrophysics Data System (ADS)

Qin, Mulan; Liang, Qiang; Pan, Anqiang; Liang, Shuquan; Zhang, Qing; Tang, Yan; Tan, Xiaoping

2014-12-01

A facile hydrothermal route has been developed to fabricate the metastable VO2 (B) ultra-thin nanobelt arrays, which can be converted into V2O5 porous nanobelt arrays after calcinating VO2 (B) in air at 400 °C for 1 h. The influence of hydrothermal time to the crystallinity and morphology of the VO2 phase has been studied. A possible mechanism for the formation of VO2 nanobelt arrays has been proposed in this paper. As a cathode material for lithium ion batteries, the V2O5 nanobelt arrays show excellent rate capability and cycling stability. An initial discharge capacity of 142 mA h g-1 can be delivered at a current density of 50 mA g-1 with almost no capacity fading after 100 cycles. Even at a current density of 1000 mA g-1, they still exhibit the capacity of 130 mA h g-1 and superior capacity retention capability. The excellent electrochemical properties are attributed to the ultra-thin thickness and the porous structures of the nanobelts.

Tuning phase transition temperature of VO2 thin films by annealing atmosphere

NASA Astrophysics Data System (ADS)

Liu, Xingxing; Wang, Shao-Wei; Chen, Feiliang; Yu, Liming; Chen, Xiaoshuang

2015-07-01

A simple new way to tune the optical phase transition temperature of VO2 films was proposed by only controlling the pressure of oxygen during the annealing process. Vanadium films were deposited on glass by a large-scale magnetron sputtering coating system and then annealed in appropriate oxygen atmosphere to form the VO2 films. The infrared transmission change (at 2400 nm) is as high as 58% for the VO2 thin film on the glass substrate, which is very good for tuning infrared radiation and energy saving as smart windows. The phase transition temperature of the films can be easily tuned from an intrinsic temperature to 44.7 °C and 40.2 °C on glass and sapphire by annealing oxygen pressure, respectively. The mechanism is: V3+ ions form in the film when under anaerobic conditions, which can interrupt the V4+ chain and reduce the phase transition temperature. The existence of V3+ ions has been observed by x-ray photoelectron spectroscopy (XPS) experiments as proof.

Microstructure evolution determined by the crystalline phases competition in self-assembled WO3-BiVO4 hetero nanostructures

NASA Astrophysics Data System (ADS)

Song, Haili; Li, Chao; Nguyen Van, Chien; Dong, Wenxia; Qi, Ruijuan; Zhang, Yuanyuan; Huang, Rong; Chu, Ying-Hao; Duan, Chun-Gang

2018-02-01

A series of self-assembled WO3-BiVO4 nanostructured thin films were grown on the (001) yttria-stabilized zirconia (YSZ) substrate at the substrate temperatures of 400 °C, 500 °C, 550 °C, 600 °C, 650 °C and 700 °C by a pulsed laser deposition method. The microstructures including crystalline phases, epitaxial relationships, surface morphologies and interface structures were investigated by a combination of x-ray diffraction, scanning electron microscopy and high-resolution transmission electron microscopy. The sample grown at 400 °C was amorphous due to the low driving forces for nucleation and diffusion. For the samples made at 500 °C, 550 °C and 600 °C, the monoclinic BiVO4 matrix epitaxially grew on YSZ, forming the matrix, where the WO3 nanopillars were embedded in with a specific orientation relationship among BiVO4, WO3 and YSZ. However, in thin films deposited at 650 °C and 700 °C, the WO3 grains randomly grew on the YSZ substrate, which dominated the microstructures of the resultant thin films. Quantitative analyses of the microstructures revealed that the lateral grain sizes of BiVO4 and WO3 increased and the volume fraction of BiVO4 in the thin films decreased with the increase of the deposition temperature. A three-regime growth mechanism of the WO3-BiVO4 composite thin film was proposed based on the growth dynamics determined by the competition between BiVO4 and WO3.

Thermal hysteresis measurement of the VO2 emissivity and its application in thermal rectification.

PubMed

Gomez-Heredia, C L; Ramirez-Rincon, J A; Ordonez-Miranda, J; Ares, O; Alvarado-Gil, J J; Champeaux, C; Dumas-Bouchiat, F; Ezzahri, Y; Joulain, K

2018-05-31

Hysteresis loops in the emissivity of VO 2 thin films grown on sapphire and silicon substrates by a pulsed laser deposition process are experimentally measured through the thermal-wave resonant cavity technique. Remarkable variations of about 43% are observed in the emissivity of both VO 2 films, within their insulator-to-metal and metal-to-insulator transitions. It is shown that: i) The principal hysteresis width (maximum slope) in the VO 2 emissivity of the VO 2  + silicon sample is around 3 times higher (lower) than the corresponding one of the VO 2  + sapphire sample. VO 2 synthesized on silicon thus exhibits a wider principal hysteresis loop with slower MIT than VO 2 on sapphire, as a result of the significant differences on the VO 2 film microstructures induced by the silicon or sapphire substrates. ii) The hysteresis width along with the rate of change of the VO 2 emissivity in a VO 2  + substrate sample can be tuned with its secondary hysteresis loop. iii) VO 2 samples can be used to build a radiative thermal diode able to operate with a rectification factor as high as 87%, when the temperature difference of its two terminals is around 17 °C. This record-breaking rectification constitutes the highest one reported in literature, for a relatively small temperature change of diode terminals.

Microwave-assisted synthesis and electrochemical evaluation of VO 2 (B) nanostructures

DOE PAGES

Ashton, Thomas E.; Borras, David Hevia; Iadecola, Antonella; ...

2015-12-01

Understanding how intercalation materials change during electrochemical operation is paramount to optimising their behaviour and function and in situ characterisation methods allow us to observe these changes without sample destruction. Here, we first report the improved intercalation properties of bronze phase vanadium dioxide VO2 (B) prepared by a microwave assisted route which exhibits a larger electrochemical capacity (232 mAh g -1) compared to VO 2 (B) prepared by a solvothermal route (197 mAh g -1). These electrochemical differences have also been followed using in situ X-ray absorption spectroscopy allowing us to follow oxidation state changes as they occur during batterymore » operation.« less

Photoinduced surface plasmon switching at VO2/Au interface.

PubMed

Kumar, Nardeep; Rúa, Armando; Aldama, Jennifer; Echeverría, Karla; Fernández, Félix E; Lysenko, Sergiy

2018-05-28

Angle-resolved reflection, light scattering and ultrafast pump-probe spectroscopy combined with a surface plasmon-polariton (SPP) resonance technique in attenuated total reflection geometry was used to investigate the light-induced plasmonic switching in a photorefractive VO 2 /Au hybrid structure. Measurements of SPP scattering and reflection shows that the optically-induced formation of metallic state in a vanadium dioxide layer deposited on a gold film significantly alters the electromagnetic field enhancement and SPP propagation length at the VO 2 /Au interface. The ultrafast optical manipulation of SPP resonance is shown on a picosecond timescale. Obtained results demonstrate high potential of photorefractive vanadium oxides as efficient plasmonic modulating materials for ultrafast optoelectronic devices.

Gate-tunable gigantic lattice deformation in VO{sub 2}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Okuyama, D., E-mail: okuyama@riken.jp, E-mail: nakano@imr.tohoku.ac.jp, E-mail: iwasa@ap.t.u-tokyo.ac.jp; Hatano, T.; Nakano, M., E-mail: okuyama@riken.jp, E-mail: nakano@imr.tohoku.ac.jp, E-mail: iwasa@ap.t.u-tokyo.ac.jp

2014-01-13

We examined the impact of electric field on crystal lattice of vanadium dioxide (VO{sub 2}) in a field-effect transistor geometry by in-situ synchrotron x-ray diffraction measurements. Whereas the c-axis lattice parameter of VO{sub 2} decreases through the thermally induced insulator-to-metal phase transition, the gate-induced metallization was found to result in a significant increase of the c-axis length by almost 1% from that of the thermally stabilized insulating state. We also found that this gate-induced gigantic lattice deformation occurs even at the thermally stabilized metallic state, enabling dynamic control of c-axis lattice parameter by more than 1% at room temperature.

Metal Insulator transition in Vanadium Dioxide

NASA Astrophysics Data System (ADS)

Jovaini, Azita; Fujita, Shigeji; Suzuki, Akira; Godoy, Salvador

2012-02-01

MAR12-2011-000262 Abstract Submitted for the MAR12 Meeting of The American Physical Society Sorting Category: 03.9 (T) On the metal-insulator-transition in vanadium dioxide AZITA JOVAINI, SHIGEJI FUJITA, University at Buffalo, SALVADOR GODOY, UNAM, AKIRA SUZUKI, Tokyo University of Science --- Vanadium dioxide (VO2) undergoes a metal-insulator transition (MIT) at 340 K with the structural change from tetragonal to monoclinic crystal. The conductivity _/ drops at MIT by four orders of magnitude. The low temperature monoclinic phase is known to have a lower ground-state energy. The existence of the k-vector k is prerequisite for the conduction since the k appears in the semiclassical equation of motion for the conduction electron (wave packet). The tetragonal (VO2)3 unit is periodic along the crystal's x-, y-, and z-axes, and hence there is a three-dimensional k-vector. There is a one-dimensional k for a monoclinic crystal. We believe this difference in the dimensionality of the k-vector is the cause of the conductivity drop. Prefer Oral Session X Prefer .

Coherent control of optical absorption and the energy transfer pathway of an infrared quantum dot hybridized with a VO2 nanoparticle

NASA Astrophysics Data System (ADS)

Hatef, Ali; Zamani, Naser; Johnston, William

2017-04-01

We systematically investigate the optical response of a semiconductor quantum dot (QD) hybridized with a vanadium dioxide nanoparticle (VO2NP) in the infrared (IR) region. The VO2NP features a semiconductor to metal phase change characteristic below and above a critical temperature that leads to an abrupt change in the particle’s optical properties. This feature means that the QD-VO2NP hybrid system can support the coherent coupling of exciton-polaritons and exciton-plasmon polaritons in the semiconductor and metal phases of the VO2NP, respectively. In our calculations, the VO2NP phase transition is modelled with a filling fraction (f), representing the fraction of the VO2NP in the metallic phase. The phase transition is driven by the hybrid system’s interaction with a continuous wave (CW) IR laser field. In this paper, we show how control over the filling fraction results in the enhancement or suppression of the QD’s linear absorption. These variations in the QD absorption is due to dramatic changes in the effective local field experienced by the QD and the non-radiative energy transfer from the QD to the VO2NP. The presented results have the potential to be applied to the design of thermal sensors at the nanoscale.

On the metal-insulator-transition in vanadium dioxide

NASA Astrophysics Data System (ADS)

Jovaini, Azita; Fujita, Shigeji; Godoy, Salvador; Suzuki, Akira

2012-02-01

Vanadium dioxide (VO2) undergoes a metal-insulator transition (MIT) at 340 K with the structural change from tetragonal to monoclinic crystal. The conductivity σ drops at MIT by four orders of magnitude. The low temperature monoclinic phase is known to have a lower ground-state energy. The existence of the k-vector k is prerequisite for the conduction since the k appears in the semiclassical equation of motion for the conduction electron (wave packet). The tetragonal (VO2)3 unit is periodic along the crystal's x-, y-, and z-axes, and hence there is a three-dimensional k-vector. There is a one-dimensional k for a monoclinic crystal. We believe this difference in the dimensionality of the k-vector is the cause of the conductivity drop.

Broadband and high modulation-depth THz modulator using low bias controlled VO2-integrated metasurface.

PubMed

Zhou, Gaochao; Dai, Penghui; Wu, Jingbo; Jin, Biaobing; Wen, Qiye; Zhu, Guanghao; Shen, Ze; Zhang, Caihong; Kang, Lin; Xu, Weiwei; Chen, Jian; Wu, Peiheng

2017-07-24

An active vanadium dioxide integrated metasurface offering broadband transmitted terahertz wave modulation with large modulation-depth under electrical control is demonstrated. The device consists of metal bias-lines arranged with grid-structure patterned vanadium dioxide (VO 2 ) film on sapphire substrate. Amplitude transmission is continuously tuned from more than 78% to 28% or lower in the frequency range from 0.3 THz to 1.0 THz, by means of electrical bias at temperature of 68 °C. The physical mechanism underlying the device's electrical tunability is investigated and found to be attributed to the ohmic heating. The developed device possessing over 87% modulation depth with 0.7 THz frequency band is expected to have many potential applications in THz regime such as tunable THz attenuator.

Influence of Discharge Current on Phase Transition Properties of High Quality Polycrystalline VO2 Thin Film Fabricated by HiPIMS

PubMed Central

Lin, Tiegui; Wang, Jian; Liu, Gang; Wang, Langping; Wang, Xiaofeng; Zhang, Yufen

2017-01-01

To fabricate high-quality polycrystalline VO2 thin film with a metal–insulator transition (MIT) temperature less than 50 °C, high-power impulse magnetron sputtering with different discharge currents was employed in this study. The as-deposited VO2 films were characterized by a four-point probe resistivity measurement system, visible-near infrared (IR) transmittance spectra, X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and scanning electron microscopy. The resistivity results revealed that all the as-deposited films had a high resistance change in the phase transition process, and the MIT temperature decreased with the increased discharge current, where little deterioration in the phase transition properties, such as the resistance and transmittance changes, could be found. Additionally, XRD patterns at various temperatures exhibited that some reverse deformations that existed in the MIT process of the VO2 film, with a large amount of preferred crystalline orientations. The decrease of the MIT temperature with little deterioration on phase transition properties could be attributed to the reduction of the preferred grain orientations. PMID:28772990

Microsecond switchable thermal antenna

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ben-Abdallah, Philippe, E-mail: pba@institutoptique.fr; Benisty, Henri; Besbes, Mondher

2014-07-21

We propose a thermal antenna that can be actively switched on and off at the microsecond scale by means of a phase transition of a metal-insulator material, the vanadium dioxide (VO{sub 2}). This thermal source is made of a periodically patterned tunable VO{sub 2} nanolayer, which support a surface phonon-polariton in the infrared range in their crystalline phase. Using electrodes properly registered with respect to the pattern, the VO{sub 2} phase transition can be locally triggered by ohmic heating so that the surface phonon-polariton can be diffracted by the induced grating, producing a highly directional thermal emission. Conversely, when heatingmore » less, the VO{sub 2} layers cool down below the transition temperature, the surface phonon-polariton cannot be diffracted anymore so that thermal emission is inhibited. This switchable antenna could find broad applications in the domain of active thermal coatings or in those of infrared spectroscopy and sensing.« less

Selective scanning tunneling microscope light emission from rutile phase of VO2.

PubMed

Sakai, Joe; Kuwahara, Masashi; Hotsuki, Masaki; Katano, Satoshi; Uehara, Yoichi

2016-09-28

We observed scanning tunneling microscope light emission (STM-LE) induced by a tunneling current at the gap between an Ag tip and a VO2 thin film, in parallel to scanning tunneling spectroscopy (STS) profiles. The 34 nm thick VO2 film grown on a rutile TiO2 (0 0 1) substrate consisted of both rutile (R)- and monoclinic (M)-structure phases of a few 10 nm-sized domains at room temperature. We found that STM-LE with a certain photon energy of 2.0 eV occurs selectively from R-phase domains of VO2, while no STM-LE was observed from M-phase. The mechanism of STM-LE from R-phase VO2 was determined to be an interband transition process rather than inverse photoemission or inelastic tunneling processes.

Resistance modulation in VO2 nanowires induced by an electric field via air-gap gates

NASA Astrophysics Data System (ADS)

Kanki, Teruo; Chikanari, Masashi; Wei, Tingting; Tanaka, Hidekazu; The Institute of Scientific; Industrial Research Team

Vanadium dioxide (VO2) shows huge resistance change with metal-insulator transition (MIT) at around room temperature. Controlling of the MIT by applying an electric field is a topical ongoing research toward the realization of Mott transistor. In this study, we have successfully switched channel resistance of VO2 nano-wire channels by a pure electrostatic field effect using a side-gate-type field-effect transistor (SG-FET) viaair gap and found that single crystalline VO2 nanowires and the channels with narrower width enhance transport modulation rate. The rate of change in resistance ((R0-R)/R, where R0 and R is the resistance of VO2 channel with off state and on state gate voltage (VG) , respectively) was 0.42 % at VG = 30 V in in-plane poly-crystalline VO2 channels on Al2O3(0001) substrates, while the rate in single crystalline channels on TiO2 (001) substrates was 3.84 %, which was 9 times higher than that using the poly-crystalline channels. With reducing wire width from 3000 nm to 400 nm of VO2 on TiO2 (001) substrate, furthermore, resistance modulation ratio enhanced from 0.67 % to 3.84 %. This change can not be explained by a simple free-electron model. In this presentation, we will compare the electronic properties between in-plane polycrystalline VO2 on Al2O3 (0001) and single crystalline VO2 on TiO2 (001) substrates, and show experimental data in detail..

Metabolism and ventilation in hypoxic rats: effect of body mass.

PubMed

Mortola, J P; Matsuoka, T; Saiki, C; Naso, L

1994-07-01

Oxygen consumption (VO2) and carbon dioxide production (VCO2) were measured by the flow-through method, and ventilation (VE) by the barometric technique in post-weaning age rats of 50, 100, 250 and 400 g, (5 males and 5 females in each group), at ambient temperature congruent to 24 degrees C. In normoxia, VO2, VCO2 and VE decreased with the increase in body weight (BW), whether normalization was by BW or by BW minus the weights of fat and skeleton; VE/VO2 and rectal temperature remained constant. In hypoxia (10% inspired O2), VE VO2 increased in all groups, to 2-2.5 times the normoxic values, because of a significant increase in VE (hyperpnea) and decrease in VO2 (hypometabolism); arterial PCO2, measured in some 100 g and 400 g rats, dropped similarly. However, the hyperpnea was about twice as large, and metabolism and body temperature decreased significantly less, in the 400 g than in the 50 g rats. The cost (ml O2) of breathing, computed in the paralysed animal artificially ventilated, averaged approximately 0.7% (normoxia) and 2% of VO2 (hypoxia), with no systematic differences with BW. The results agree with the concept that the metabolic response to hypoxia can be an important determinant of the magnitude of the hyperpnea.

Near-infrared localized surface plasmon resonance of self-growing W-doped VO2 nanoparticles at room temperature

NASA Astrophysics Data System (ADS)

Nishikawa, Kazutaka; Kishida, Yoshihiro; Ito, Kota; Tamura, Shin-ichi; Takeda, Yasuhiko

2017-11-01

Nanoparticles (NPs) of vanadium dioxide (VO2) in the metal state exhibit localized surface plasmon resonance (LSPR) at 1200-1600 nm, which fills the gap between the absorption ranges of silicon and the LSPR of conventional transparent conductor NPs (ZnO:Al, In2O3:Sn, etc.). However, two issues of the lithographic process for NP formation and the metal-insulator transition temperature (69 °C) higher than room temperature have made it difficult to use VO2 NPs for applications such as energy conversion devices, near infrared (NIR) light detectors, and bio-therapy. In this study, we developed a self-growing process for tungsten (W)-doped VO2 NPs that are in the metal state at room temperature, using sputter deposition and post-lamp annealing. The changes in the LSPR peak wavelengths with the NP size were well controlled by changing the deposited film thickness and oxygen pressure during the post-annealing treatment. The presented results resolve the difficulties of using the metal-insulator transition material VO2 for practical NIR utilization.

Thermal conductivity of SrVO3-SrTiO3 thin films: Evidence of intrinsic thermal resistance at the interface between oxide layers

NASA Astrophysics Data System (ADS)

Katsufuji, T.; Saiki, T.; Okubo, S.; Katayama, Y.; Ueno, K.

2018-05-01

By using a technique of thermoreflectance that can precisely measure the thermal conductivity of thin films, we found that the thermal conductivity of SrVO3-SrTiO3 multilayer thin films normal to the surface was substantially reduced by decreasing the thickness of each layer. This indicates that a large intrinsic thermal resistance exists at the interface between SrVO3 and SrTiO3 in spite of the similar phononic properties for these two compounds.

Electronic structure and insulating gap in epitaxial VO 2 polymorphs

DOE PAGES

Lee, Shinbuhm; Meyer, Tricia L.; Sohn, Changhee; ...

2015-12-24

Here, determining the origin of the insulating gap in the monoclinic VO 2(M1) is a long-standing issue. The difficulty of this study arises from the simultaneous occurrence of structural and electronic transitions upon thermal cycling. Here, we compare the electronic structure of the M1 phase with that of single crystalline insulating VO 2(A) and VO 2(B) thin films to better understand the insulating phase of VO 2. As these A and B phases do not undergo a structural transition upon thermal cycling, we comparatively study the origin of the gap opening in the insulating VO 2 phases. By x-ray absorptionmore » and optical spectroscopy, we find that the shift of unoccupied t 2g orbitals away from the Fermi level is a common feature, which plays an important role for the insulating behavior in VO 2 polymorphs. The distinct splitting of the half-filled t 2g orbital is observed only in the M1 phase, widening the bandgap up to ~0.6 eV. Our approach of comparing all three insulating VO 2 phases provides insight into a better understanding of the electronic structure and the origin of the insulating gap in VO 2.« less

Optical diffraction in ordered VO2 nanoparticle arrays

NASA Astrophysics Data System (ADS)

Lopez, Rene; Feldman, Leonard; Haglund, Richard

2006-03-01

The potential of oxide electronic materials as multifunctional building blocks is one of the driving concepts of the field. In this presentation, we show how nanostructured particle arrays with long-range order can be used to modulate an optical response through exploiting the metal-insulator transition of vanadium dioxide. Arrays of VO2 nanoparticles with long-range order were fabricated by pulsed laser deposition in an arbitrary pattern defined by focused ion-beam lithography. The interaction of light with the nanoparticles is controlled by the nanoparticle size, spacing and geometrical arrangement and by switching between the metallic and semiconducting phases of VO2. In addition to the near-infrared surface plasmon response observed in previous VO2 studies, the VO2 nanoparticle arrays exhibit size-dependent optical resonances in the visible region that likewise show an enhanced optical contrast between the semiconducting and metallic phases. The collective optical response as a function of temperature gives rise to an enhanced scattering state during the evolving phase transition, while the incoherent coupling between the nanoparticles produces an order-disorder-order transition.

Gate-tunable gigantic changes in lattice parameters and optical properties in VO2

NASA Astrophysics Data System (ADS)

Nakano, Masaki; Okuyama, Daisuke; Shibuya, Keisuke; Ogawa, Naoki; Hatano, Takafumi; Kawasaki, Masashi; Arima, Taka-Hisa; Iwasa, Yoshihiro; Tokura, Yoshinori

2014-03-01

The field-effect transistor provides an electrical switching function of current flowing through a channel surface by external gate voltage (VG). We recently reported that an electric-double-layer transistor (EDLT) based on vanadium dioxide (VO2) enables electrical switching of the metal-insulator phase transition, where the low-temperature insulating state can be completely switched to the metallic state by application of VG. Here we demonstrate that VO2-EDLT enables electrical switching of lattice parameters and optical properties as well as electrical current. We performed in-situ x-ray diffraction and optical transmission spectroscopy measurements, and found that the c-axis length and the infrared transmittance of VO2 can be significantly modulated by more than 1% and 40%, respectively, by application of VG. We emphasize that these distinguished features originate from the electric-field induced bulk phase transition available with VO2-EDLT. This work was supported by the Japan Society for the Promotion of Science (JSPS) through its ``Funding Program for World-Leading Innovative R&D on Science and Technology (FIRST Program).''

Persistent electrochemical performance in epitaxial VO 2(B)

DOE PAGES

Lee, Shinbuhm; Sun, Xiao -Guang; Lubimtsev, Andrew A.; ...

2017-03-07

Discovering high-performance energy storage materials is indispensable for renewable energy, electric vehicle performance, and mobile computing. Owing to the open atomic framework and good room temperature conductivity, bronze-phase vanadium dioxide [VO 2(B)] has been regarded as a highly promising electrode material for Li ion batteries. However, previous attempts were unsuccessful to show the desired cycling performance and capacity without chemical modification. Here, we show with epitaxial VO 2(B) films that one can accomplish the theoretical limit for capacity with persistent charging–discharging cyclability owing to the high structural stability and unique open pathways for Li ion conduction. Atomic-scale characterization by scanningmore » transmission electron microscopy and density functional theory calculations also reveal that the unique open pathways in VO 2(B) provide the most stable sites for Li adsorption and diffusion. Furthermore, this work ultimately demonstrates that VO 2(B) is a highly promising energy storage material and has no intrinsic hindrance in achieving superior cyclability with a very high power and capacity in a Li-ion conductor.« less

Effect of 400 ml blood loss on adaptation of certain functions of the organism to exercise.

PubMed

Markiewicz, K; Cholewa, M; Górski, L; Jaszczuk, J; Chmura, J; Bartniczak, Z

1981-01-01

Eighteen men aged 19-23 years, volunteer blood donors, donated 400 ml of blood. Twenty-four hours before donation, one hour and 24 hours after it they performed a 10-minute exercise on Monark cycle ergometer at workloads raising the heart rate to 170/min. During the exercise the oxygen uptake (VO2), carbon dioxide elimination (VCO2), respiratory quotient (RQ), oxygen uptake to maximal oxygen uptake ratio (VO2/VO2 max), heart rate (HR) and systolic and diastolic arterial blood pressure (Ps and Pd) were determined. The obtained results were compared with the values of haemoglobin concentration and erythrocyte count. One hour after blood donation raised values of HR and Pd were obtained (p less than 0.05) with decreased Ps (p less than 0.05) and VO2 (p less than 0.05). Twenty-four hours after blood loss these parameters were not different from the initial ones (p less than 0.05). Submaximal exercise performed 1 hour after blood loss produced a significantly greater increase of the heart rate than this exercise performed before blood loss. The values of VO2, VCO2, and VO2/VO2 max were slightly lower and those of RQ and HRXPs slightly higher than during control exercise (p less than 0.05). Exercise performed 24 hours after blood loss caused identical changes in these parameters as during control tests.

Size and composition-controlled fabrication of thermochromic metal oxide nanocrystals

NASA Astrophysics Data System (ADS)

Clavero, César; Slack, Jonathan L.; Anders, André

2013-09-01

Finding new methods for the fabrication of metal oxide nanocrystals with high control on their composition, size and crystallinity is paramount for making large-area and low-cost optical coatings. Here, we demonstrate the fabrication of thermochromic VO2 nanocrystals using a physical vapour deposition-based route, with high control over their composition, size and crystallinity. This technique presents great potential to be scaled up and integrated with in-line coaters, commonly used for large-area deposition. Optimum crystallization of the VO2 nanoparticles is achieved after post-growth annealing at 350 °C, a temperature drastically lower than that required by chemical or implantation fabrication methods. The obtained nanoparticle thin films exhibit superior modulation of the transmittance in the visible and near IR portion of the spectrum as compared to conventional VO2 thin films due to plasmonic effects, opening up a new horizon in applications such as smarts windows.

Vanadium dioxide nanogrid films for high transparency smart architectural window applications.

PubMed

Liu, Chang; Balin, Igal; Magdassi, Shlomo; Abdulhalim, Ibrahim; Long, Yi

2015-02-09

This study presents a novel approach towards achieving high luminous transmittance (T(lum)) for vanadium dioxide (VO(2)) thermochromic nanogrid films whilst maintaining the solar modulation ability (ΔT(sol)). The perforated VO(2)-based films employ orderly-patterned nano-holes, which are able to favorably transmit visible light dramatically but retain large near-infrared modulation, thereby enhancing ΔT(sol). Numerical optimizations using parameter search algorithms have implemented through a series of Finite Difference Time Domain (FDTD) simulations by varying film thickness, cell periodicity, grid dimensions and variations of grid arrangement. The best performing results of T(lum) (76.5%) and ΔT(sol) (14.0%) are comparable, if not superior, to the results calculated from nanothermochromism, nanoporosity and biomimic nanostructuring. It opens up a new approach for thermochromic smart window applications.

In situ electrical resistivity measurements of vanadium thin films performed in vacuum during different annealing cycles

NASA Astrophysics Data System (ADS)

Pedrosa, Paulo; Cote, Jean-Marc; Martin, Nicolas; Arab Pour Yazdi, Mohammad; Billard, Alain

2017-02-01

The present study describes a sputtering and in situ vacuum electrical resistivity setup that allows a more efficient sputtering-oxidation coupling process for the fabrication of oxide compounds like vanadium dioxide, VO2. After the sputtering deposition of pure V thin films, the proposed setup enables the sample holder to be transferred from the sputtering to the in situ annealing + resistivity chamber without venting the whole system. The thermal oxidation of the V films was studied by implementing two different temperature cycles up to 550 °C, both in air (using a different resistivity setup) and vacuum conditions. Main results show that the proposed system is able to accurately follow the different temperature setpoints, presenting clean and low-noise resistivity curves. Furthermore, it is possible to identify the formation of different vanadium oxide phases in air, taking into account the distinct temperature cycles used. The metallic-like electrical properties of the annealed coatings are maintained in vacuum whereas those heated in air produce a vanadium oxide phase mixture.

In situ electrical resistivity measurements of vanadium thin films performed in vacuum during different annealing cycles.

PubMed

Pedrosa, Paulo; Cote, Jean-Marc; Martin, Nicolas; Arab Pour Yazdi, Mohammad; Billard, Alain

2017-02-01

The present study describes a sputtering and in situ vacuum electrical resistivity setup that allows a more efficient sputtering-oxidation coupling process for the fabrication of oxide compounds like vanadium dioxide, VO 2 . After the sputtering deposition of pure V thin films, the proposed setup enables the sample holder to be transferred from the sputtering to the in situ annealing + resistivity chamber without venting the whole system. The thermal oxidation of the V films was studied by implementing two different temperature cycles up to 550 °C, both in air (using a different resistivity setup) and vacuum conditions. Main results show that the proposed system is able to accurately follow the different temperature setpoints, presenting clean and low-noise resistivity curves. Furthermore, it is possible to identify the formation of different vanadium oxide phases in air, taking into account the distinct temperature cycles used. The metallic-like electrical properties of the annealed coatings are maintained in vacuum whereas those heated in air produce a vanadium oxide phase mixture.

Electrically driven hybrid photonic metamaterials for multifunctional control

NASA Astrophysics Data System (ADS)

Kang, Lei; Liu, Liu; Campbell, Sawyer D.; Yue, Taiwei; Ren, Qiang; Mayer, Theresa S.; Werner, Douglas H.

2017-08-01

The unique light-matter interaction in metamaterials, a type of artificial medium in which the geometrical features of subunits dominate their optical responses, have been utilized to achieve exotic material properties that are rare or nonexistent in natural materials. Furthermore, to extend their behaviors, active materials have been introduced into metamaterial systems to advance tunability, switchability and nonlinearity. Nevertheless, practical examples of versatile photonic metamaterials remain exceedingly rare for two main reasons. On the one hand, in sharp contrast to the broad material options available at lower frequencies, it is less common to find active media in the optical regime that can provide pronounced dielectric property changes under external stimuli, such as electric and magnetic fields. Vanadium dioxide (VO2), offering a large refractive index variation over a broad frequency range due to its near room temperature insulator-to-metal transition (IMT), has been favored in recent studies on tunable metamaterials. On the other hand, it turns out that regulating responses of hybrid metamaterials to external forces in an integrated manner is not a straightforward task. Recently, metamaterial-enabled devices (i.e., metadevices) with `self-sufficient' or `self-contained' electrical and optical properties have enabled complex functionalities. Here, we present a design methodology along with the associated experimental validation of a VO2 thin film integrated optical metamaterial absorber as a hybrid photonic platform for electrically driven multifunctional control, including reflectance switching, a rewritable memory process and manageable localized camouflage. The nanoengineered topologically continuous metal structure simultaneously supports the optical resonance and electrical functionality that actuates the phase transition in VO2 through the process of Joule heating. This work provides a universal approach to creating self-sufficient and highly-versatile nanophotonic systems.

VO2 film temperature dynamics at low-frequency current self-oscillations

NASA Astrophysics Data System (ADS)

Bortnikov, S. G.; Aliev, V. Sh.; Badmaeva, I. A.; Mzhelskiy, I. V.

2018-02-01

Low-frequency (˜2 Hz) current self-oscillations were first obtained in a millimeter-sized two-terminal planar device with a vanadium dioxide (VO2) film. The film temperature distribution dynamics was investigated within one oscillation period. It was established that the formation and disappearance of a conductive channel occur in a film in less than 60 ms with oscillation period 560 ms. The experimentally observed temperature in the channel region reached 413 K, being understated due to a low infrared microscope performance (integration time 10 ms). The VO2 film temperature distribution dynamics was simulated by solving a 2D problem of the electric current flow and heat transfer in the film. The calculation showed that the thermally initiated resistance switching in the film occurs in less than 4 ms at a channel temperature reaching ˜1000 K. The experimental results and simulation are consistent with the current self-oscillation mechanism based on the current pinching and dielectric relaxation in the VO2 film at the metal-insulator phase transition.

Surface charge sensing by altering the phase transition in VO2

NASA Astrophysics Data System (ADS)

Kumar, S.; Esfandyarpour, R.; Davis, R.; Nishi, Y.

2014-08-01

Detection of surface charges has various applications in medicine, electronics, biotechnology, etc. The source of surface charge induction may range from simple charge-polarized molecules like water to complicated proteins. It was recently discovered that surface charge accumulation can alter the temperature at which VO2 undergoes a Mott transition. Here, we deposited polar molecules onto the surface of two-terminal thin-film VO2 lateral devices and monitored the joule-heating-driven Mott transition, or conductance switching. We observed that the power required to induce the conductance switching reduced upon treatment with polar molecules and, using in-situ blackbody-emission direct measurement of local temperature, we show that this reduction in power was accompanied by reduction in the Mott transition temperature. Further evidence suggested that this effect has specificity to the nature of the species used to induce surface charges. Using x-ray absorption spectroscopy, we also show that there is no detectable change in oxidation state of vanadium or structural phase in the bulk of the 40 nm VO2 thin-film even as the phase transition temperature is reduced by up to 20 K by the polar molecules. The ability to alter the phase transition parameters by depositing polar molecules suggests a potential application in sensing surface charges of different origins and this set of results also highlights interesting aspects of the phase transition in VO2.

Thermochromic VO2 on Zinnwaldite Mica by pulsed laser deposition

NASA Astrophysics Data System (ADS)

Mathevula, L.; Ngom, B. D.; Kotsedi, L.; Sechogela, P.; Doyle, T. B.; Ghouti, M.; Maaza, M.

2014-09-01

VO2 thin films have been deposited by pulsed laser deposition on Zinnwaldite Mica substrates. The crystal structure, chemical composition, morphology were determined and the semiconductor/metal transition (SMT) properties of the deposited films were investigated. Without any post annealing, the films exhibit a textured nature with a VO2 (0 1 1) preferred crystallographic orientation and an elevated thermal variation of the electric resistance ratio RS/RM through the SMT at T ≈ 68 °C of the order of 104 and a narrow ∼7 °C hysteresis. In addition, the growth of the VO2 crystallites seem to be governed likely by a Volmer-Weber or Stranski-Krastanov mechanisms and certainly not a Frank-van Der Merwe process.

Non-catalytic hydrogenation of VO2 in acid solution.

PubMed

Chen, Yuliang; Wang, Zhaowu; Chen, Shi; Ren, Hui; Wang, Liangxin; Zhang, Guobin; Lu, Yalin; Jiang, Jun; Zou, Chongwen; Luo, Yi

2018-02-26

Hydrogenation is an effective way to tune the property of metal oxides. It can conventionally be performed by doping hydrogen into solid materials with noble-metal catalysis, high-temperature/pressure annealing treatment, or high-energy proton implantation in vacuum condition. Acid solution naturally provides a rich proton source, but it should cause corrosion rather than hydrogenation to metal oxides. Here we report a facile approach to hydrogenate monoclinic vanadium dioxide (VO 2 ) in acid solution at ambient condition by placing a small piece of low workfunction metal (Al, Cu, Ag, Zn, or Fe) on VO 2 surface. It is found that the attachment of a tiny metal particle (~1.0 mm) can lead to the complete hydrogenation of an entire wafer-size VO 2 (>2 inch). Moreover, with the right choice of the metal a two-step insulator-metal-insulator phase modulation can even be achieved. An electron-proton co-doping mechanism has been proposed and verified by the first-principles calculations.

Comprehensive studies of interfacial strain and oxygen vacancy on metal-insulator transition of VO2 film

NASA Astrophysics Data System (ADS)

Fan, L. L.; Chen, S.; Liao, G. M.; Chen, Y. L.; Ren, H.; Zou, C. W.

2016-06-01

As a typical strong correlation material, vanadium dioxide (VO2) has attracted wide interest due to its particular metal-insulator transition (MIT) property. However, the relatively high critical temperature (T c) of ~68 °C seriously hinders its practical applications. Thus modulating the phase transition process and decreasing the T c close to room temperature have been hot topics for VO2 study. In the current work, we conducted a multi-approach strategy to control the phase transition of VO2 films, including the interfacial tensile/compressive strain and oxygen vacancies. A synchrotron radiation reciprocal space mapping technique was used to directly record the interfacial strain evolution and variations of lattice parameters. The effects of interfacial strain and oxygen vacancies in the MIT process were systematically investigated based on band structure and d-orbital electron occupation. It was suggested that the MIT behavior can be modulated through the combined effects of the interfacial strain and oxygen vacancies, achieving the distinct phase transition close to room temperature. The current findings not only provide better understanding for strain engineering and oxygen vacancies controlling phase transition behavior, but also supply a combined way to control the phase transition of VO2 film, which is essential for VO2 film based device applications in the future.

Comprehensive studies of interfacial strain and oxygen vacancy on metal-insulator transition of VO2 film.

PubMed

Fan, L L; Chen, S; Liao, G M; Chen, Y L; Ren, H; Zou, C W

2016-06-29

As a typical strong correlation material, vanadium dioxide (VO2) has attracted wide interest due to its particular metal-insulator transition (MIT) property. However, the relatively high critical temperature (T c) of ~68 °C seriously hinders its practical applications. Thus modulating the phase transition process and decreasing the T c close to room temperature have been hot topics for VO2 study. In the current work, we conducted a multi-approach strategy to control the phase transition of VO2 films, including the interfacial tensile/compressive strain and oxygen vacancies. A synchrotron radiation reciprocal space mapping technique was used to directly record the interfacial strain evolution and variations of lattice parameters. The effects of interfacial strain and oxygen vacancies in the MIT process were systematically investigated based on band structure and d-orbital electron occupation. It was suggested that the MIT behavior can be modulated through the combined effects of the interfacial strain and oxygen vacancies, achieving the distinct phase transition close to room temperature. The current findings not only provide better understanding for strain engineering and oxygen vacancies controlling phase transition behavior, but also supply a combined way to control the phase transition of VO2 film, which is essential for VO2 film based device applications in the future.

Tunable subwavelength hot spot of dipole nanostructure based on VO2 phase transition.

PubMed

Park, Jun-Bum; Lee, Il-Min; Lee, Seung-Yeol; Kim, Kyuho; Choi, Dawoon; Song, Eui Young; Lee, Byoungho

2013-07-01

We propose a novel approach to generate and tune a hot spot in a dipole nanostructure of vanadium dioxide (VO2) laid on a gold (Au) substrate. By inducing a phase transition of the VO2, the spatial and spectral distributions of the hot spot generated in the feed gap of the dipole can be tuned. Our numerical simulation based on a finite-element method shows a strong intensity enhancement difference and tunability near the wavelength of 678 nm, where the hot spot shows 172-fold intensity enhancement when VO2 is in the semiconductor phase. The physical mechanisms of forming the hot spots at the two-different phases are discussed. Based on our analysis, the effects of geometric parameters in our dipole structure are investigated with an aim of enhancing the intensity and the tunability. We hope that the proposed nanostructure opens up a practical approach for the tunable near-field nano-photonic devices.

Switchable wavelength-selective and diffuse metamaterial absorber/emitter with a phase transition spacer layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Hao; Yang, Yue; Wang, Liping, E-mail: liping.wang@asu.edu

2014-08-18

We numerically demonstrate a switchable metamaterial absorber/emitter by thermally turning on or off the excitation of magnetic resonance upon the phase transition of vanadium dioxide (VO{sub 2}). Perfect absorption peak exists around the wavelength of 5 μm when the excitation of magnetic resonance is supported with the insulating VO{sub 2} spacer layer. The wavelength-selective absorption is switched off when the magnetic resonance is disabled with metallic VO{sub 2} that shorts the top and bottom metallic structures. The resonance wavelength can be tuned with different geometry, and the switchable metamaterial exhibits diffuse behaviors at oblique angles. The results would facilitate the designmore » of switchable metamaterials for active control in energy and sensing applications.« less

Temperature and electric field induced metal-insulator transition in atomic layer deposited VO2 thin films

NASA Astrophysics Data System (ADS)

Tadjer, Marko J.; Wheeler, Virginia D.; Downey, Brian P.; Robinson, Zachary R.; Meyer, David J.; Eddy, Charles R.; Kub, Fritz J.

2017-10-01

Amorphous vanadium oxide (VO2) films deposited by atomic layer deposition (ALD) were crystallized with an ex situ anneal at 660-670 °C for 1-2 h under a low oxygen pressure (10-4 to 10-5 Torr). Under these conditions the crystalline VO2 phase was maintained, while formation of the V2O5 phase was suppressed. Electrical transition from the insulator to the metallic phase was observed in the 37-60 °C range, with an ROFF/RON ratio of up to about 750 and ΔTC ≅ 7-10 °C. Lateral electric field applied across two-terminal device structures induced a reversible phase change, with a room temperature transition field of about 25 kV/cm in the VO2 sample processed with the 2 h long O2 anneal. Both the width and slope of the field induced MIT I-V hysteresis were dependent upon the VO2 crystalline quality.

Anomalous spectral-weight transfers unraveling oxygen screening and electronic correlations in the insulator-metal transition of VO2

NASA Astrophysics Data System (ADS)

Yeo, L. H.; Srivastava, A.; Majidi, M. A.; Sutarto, R.; He, F.; Poh, S. M.; Diao, C.; Yu, X.; Motapothula, M.; Saha, S.; Ojha, S.; Kanjilal, D.; Trevisanutto, P. E.; Breese, M. B. H.; Venkatesan, T.; Rusydi, A.

2015-02-01

Vanadium dioxide (VO2) undergoes an unusual insulator-metal transition (IMT), and after decades of study, the origin of the IMT remains hotly debated. Here, by analyzing spectral-weight transfers (SWTs) of x-ray absorption spectroscopy at the V L3 ,2 and O K edges on specially designed VO2 films, we observe d||(dx2-y2) band splitting at the V L3 ,2 edges across the IMT, accompanied by anomalous SWTs as high as ˜12 eV at the O K edge, indicating strong electronic correlations. Surprisingly, a few oxygen vacancies induce dramatic SWTs at the O K edge, but the sample remains conducting. Supported by theoretical calculations, we find that in the metallic state, direct V (3 d∥) -V(3 d∥) and O(2 p ) -V(3 d∥) hybridized orbital correlations are screened by O(2 p ) -V(3 dπ) hybridized orbitals, while in the insulating state they are strongly correlated due to changes in the oxygen orbital occupancy. Our result shows the importance of screenings and electronic correlations for IMTs in VO2.

Effects of Twenty Days of the Ketogenic Diet on Metabolic and Respiratory Parameters in Healthy Subjects.

PubMed

Rubini, Alessandro; Bosco, Gerardo; Lodi, Alessandra; Cenci, Lorenzo; Parmagnani, Andrea; Grimaldi, Keith; Zhongjin, Yang; Paoli, Antonio

2015-12-01

The effects of the ketogenic diet (KD) on weight loss, metabolic, and respiratory parameters were investigated in healthy subjects. Thirty-two healthy subjects were randomized into two groups. The KD group followed a ketogenic diet for 20 days (KD t 0-t 20), then switched to a low-carbohydrate, no-ketogenic diet for 20 days (KD t 20-t 40), and finally was on a Mediterranean diet (MD) for 2 more months (KD t 40-t 2m). The MD group followed a MD for 20 days (MD t 0-t 20), then followed a MD of 1400 kcal over the next 20 days (MD t 20-t 40), and completed the study with the MD for 2 months (MD t 40-t 2m). Body weight, body fat, respiratory rate, and respiratory gas parameters (including respiratory exchange ratio (RER) and carbon dioxide end-tidal partial pressure (PETCO2), oxygen uptake (VO2), carbon dioxide production (VCO2), and resting energy expenditure (REE)) were measured at each point. A significant decrease (p < 0.05) in RER was observed after 20 and 40 days in the KD group, but not in the MD group. In the KD group, significant reductions were observed for both carbon dioxide output and PETCO2, however, there was no significant change in VO2, VCO2, and REE. While both diets significantly decreased body fat mass, the KD diet overall proved to have a higher percentage of fat loss versus the MD diet. The KD may significantly decrease carbon dioxide body stores, which may theoretically be beneficial for patients with increased carbon dioxide arterial partial pressure due to respiratory insufficiency or failure.

Low-Cost and Facile Synthesis of the Vanadium Oxides V2O3, VO2, and V2O5 and Their Magnetic, Thermochromic and Electrochromic Properties.

PubMed

Mjejri, Issam; Rougier, Aline; Gaudon, Manuel

2017-02-06

In this study, vanadium sesquioxide (V 2 O 3 ), dioxide (VO 2 ), and pentoxide (V 2 O 5 ) were all synthesized from a single polyol route through the precipitation of an intermediate precursor: vanadium ethylene glycolate (VEG). Various annealing treatments of the VEG precursor, under controlled atmosphere and temperature, led to the successful synthesis of the three pure oxides, with sub-micrometer crystallite size. To the best of our knowledge, the synthesis of the three oxides V 2 O 5 , VO 2 , and V 2 O 3 from a single polyol batch has never been reported in the literature. In a second part of the study, the potentialities brought about by the successful preparation of sub-micrometer V 2 O 5 , VO 2 , and V 2 O 3 are illustrated by the characterization of the electrochromic properties of V 2 O 5 films, a discussion about the metal to insulator transition of VO 2 on the basis of in situ measurements versus temperature of its electrical and optical properties, and the characterization of the magnetic transition of V 2 O 3 powder from SQUID measurements. For the latter compound, the influence of the crystallite size on the magnetic properties is discussed.

Influences of W Content on the Phase Transformation Properties and the Associated Stress Change in Thin Film Substrate Combinations Studied by Fabrication and Characterization of Thin Film V1- xW xO2 Materials Libraries.

PubMed

Wang, Xiao; Rogalla, Detlef; Ludwig, Alfred

2018-04-09

The mechanical stress change of VO 2 film substrate combinations during their reversible phase transformation makes them promising for applications in micro/nanoactuators. V 1- x W x O 2 thin film libraries were fabricated by reactive combinatorial cosputtering to investigate the effects of the addition of W on mechanical and other transformation properties. High-throughput characterization methods were used to systematically determine the composition spread, crystalline structure, surface topography, as well as the temperature-dependent phase transformation properties, that is, the hysteresis curves of the resistance and stress change. The study indicates that as x in V 1- x W x O 2 increases from 0.007 to 0.044 the crystalline structure gradually shifts from the VO 2 (M) phase to the VO 2 (R) phase. The transformation temperature decreases by 15 K/at. % and the resistance change is reduced to 1 order of magnitude, accompanied by a wider transition range and a narrower hysteresis with a minimal value of 1.8 K. A V 1- x W x O 2 library deposited on a Si 3 N 4 /SiO 2 -coated Si cantilever array wafer was used to study simultaneously the temperature-dependent stress change σ( T) of films with different W content through the phase transformation. Compared with σ( T) of ∼700 MPa of a VO 2 film, σ( T) in V 1- x W x O 2 films decreases to ∼250 MPa. Meanwhile, σ( T) becomes less abrupt and occurs over a wider temperature range with decreased transformation temperatures.

Effects of Zirconium Ions Doping on the Structural and Thermochromic Properties of VO2 Thin Films

NASA Astrophysics Data System (ADS)

Li, Yuanbao; Liu, Juncheng; Wang, Danping; Dang, Yuanyuan

2017-11-01

As an inorganic functional material, VO2 thin films are expected to be used for smart windows. However, these films are not conducive to practical applications when the phase transition temperature ( Tc) of the VO2 is approximately 68°C, which is greater than room temperature. To decrease Tc, the effect of Zr4+ doping on the structure and properties of VO2 films were investigated. The films were prepared using a sol-gel process, spin-coating on quartz glasses, and annealing at 525°C in a tube furnace within a nitrogen atmosphere. The results demonstrate that these films have a highly preferential crystalline orientation on the substrate; however, the primary two x-ray diffraction pattern peaks shift slightly toward the small angle, and when 7 at.% Zr4+ was doped in the VO2 film, the deviation angle was 0.16°, and the crystallite size was approximately 98 nm. A large number of grains were found on the surface of the pure VO2 films, but all the Zr4+ doped films had a layered structure, and the thickness of the films was approximately 200 nm. The Tc of these films was characterized using differential scanning calorimetry, and the luminous and solar transmittance was characterized using a UV-Vis-NIR spectrophotometer, which demonstrated that the effect of Zr4+ doping decreased Tc by approximately 1°C per 1 at.% on average, and the Tc of the 7 at.% film was slightly greater than that of the 5 at.% film, the phase transition temperature of which was 61.4°C. The transmittance decreased as the doping concentration increased, and 1 at.% Zr4+ doping increased the luminous regulation efficiency (Δ T lum) and solar modulation efficiency (Δ T sol). The Δ T lum of the pure VO2 film and the 1 at.% Zr4+-doped VO2 films was 10.9% and 11.2%, and Δ T sol was 14.4 and 15.2%, respectively.

Investigations on structural and giant magneto impedance properties of Zn3(VO4)2 nanorods

NASA Astrophysics Data System (ADS)

Malaidurai, M.; Bulusu, Venkat; De, Sourodeep; Thangavel, R.

2018-05-01

In this paper, we successfully synthesized Zn3(VO4)2 novel nanorods by hydrothermal method. As mixed phase of Zn3(VO4)2 structural and phase transformations were monitored in crystal lattice with different ionic strength by X-ray diffraction(XRD). The Zn3(VO4)2 thin film formation validated through qualitative and quantitative analysis by FESEM and it is clearly depicted the formation of the Zn3(VO4)2 nanorods varied from ˜100nm in lengths and ˜30 nm in widths. The Zn precursor's anions directly influence the composition and shape of the resultant hydrated Zn3(VO4)2. Impedance analysis were closely studied with Impedance-Frequency characterization, which was then followed by a dielectric measurement. The analysis of GMI effect was carried out with the help of the model equivalent circuit at low frequencies, constant phase element (CPE). GMI effect and the sensitivity are calculated for the sample by appling magnetic field and driving frequency in order to analyze the giant magnetoimpedance resistance of grain boundaries for spintronics applications.

Chemically induced porosity on BiVO4 films produced by double magnetron sputtering to enhance the photo-electrochemical response.

PubMed

Thalluri, Sitaramanjaneya Mouli; Rojas, Roberto Mirabal; Rivera, Osmary Depablos; Hernández, Simelys; Russo, Nunzio; Rodil, Sandra Elizabeth

2015-07-21

Double magnetron sputtering (DMS) is an efficient system that is well known because of its precise control of the thin film synthesizing process over any kind of substrate. Here, DMS has been adopted to synthesize BiVO4 films over a conducting substrate (FTO), using metallic vanadium and ceramic Bi2O3 targets simultaneously. The films were characterized using different techniques, such as X-ray diffraction (XRD), UV-Vis spectroscopy, Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), field emission scanning electron microscopy (FESEM) and profilometry. The photo-electrochemical analysis was performed using linear scan voltammetry, chronoamperometry and electrochemical impedance spectroscopy (EIS) under the illumination of simulated solar light at 1 Sun. The photocurrent density of the sputtered BiVO4 thin films could be improved from 0.01 mA cm(-2) to 1.19 mA cm(-2) at 1.23 V vs. RHE by chemical treatment using potassium hydroxide (KOH). The effect of KOH was the removal of impurities from the grain boundaries, leading to a more porous structure and more pure crystalline monoclinic BiVO4 particles. Such variations in the microstructure as well as the improvement of the charge transfer properties of the BiVO4 film after the KOH treatment were confirmed and studied in depth by EIS analysis.

Geometric confinement effects on the metal-insulator transition temperature and stress relaxation in VO2 thin films grown on silicon

NASA Astrophysics Data System (ADS)

Viswanath, Changhyun Ko, B.; Yang, Zheng; Ramanathan, Shriram

2011-03-01

VO2 undergoes a sharp metal-insulator transition at ˜67 °C with several orders of change in conductivity and optical transmittance. Understanding and control of the properties of vanadium oxide layers grown on technologically relevant substrates such as Si (100) single crystals is therefore of great interest. In this work, we show tunability of metal-insulator transition temperature as well as recoverable stress in VO2 thin films grown on Si substrate by introducing nanoscale atomic layer deposited HfO2 interfacial layers with no degradation in the resistance ratio. For a confined VO2 film, the metal-insulator transition temperature is suppressed by ˜16 °C and the recoverable stress is 150 MPa, compared to 400 MPa for a bare film. These observations are further correlated with in situ variable temperature measurement of stress changes occurring during the phase transition. Structural and microstructural studies on the various samples have been carried out by x ray diffraction and cross-sectional transmission electron microscopy. The strategy of tuning the metal-insulator transition characteristics by nanoscale interfacial dielectrics is of broader relevance in design of programmable materials and integration into solid state devices for electronics.

BiVO{sub 4} photoanodes for water splitting with high injection efficiency, deposited by reactive magnetron co-sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gong, Haibo; Institute for Solar Fuels, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, 14109 Berlin; Freudenberg, Norman

2016-04-15

Photoactive bismuth vanadate (BiVO{sub 4}) thin films were deposited by reactive co-magnetron sputtering from metallic Bi and V targets. The effects of the V-to-Bi ratio, molybdenum doping and post-annealing on the crystallographic and photoelectrochemical (PEC) properties of the BiVO{sub 4} films were investigated. Phase-pure monoclinic BiVO{sub 4} films, which are more photoactive than the tetragonal BiVO{sub 4} phase, were obtained under slightly vanadium-rich conditions. After annealing of the Mo-doped BiVO{sub 4} films, the photocurrent increased 2.6 times compared to undoped films. After optimization of the BiVO{sub 4} film thickness, the photocurrent densities (without a catalyst or a blocking layer ormore » a hole scavenger) exceeded 1.2 mA/cm{sup 2} at a potential of 1.23 V{sub RHE} under solar AM1.5 irradiation. The surprisingly high injection efficiency of holes into the electrolyte is attributed to the highly porous film morphology. This co-magnetron sputtering preparation route for photoactive BiVO{sub 4} films opens new possibilities for the fabrication of large-scale devices for water splitting.« less

Simulation study of MEMS piezoelectric vibration energy harvester based on c-axis tilted AlN thin film for performance improvement

NASA Astrophysics Data System (ADS)

Kong, Lingfeng; Zhang, Jinhui; Wang, Huiyuan; Ma, Shenglin; Li, Fang; Wang, Qing-Ming; Qin, Lifeng

2016-12-01

In this paper, a MEMS piezoelectric cantilevered vibration energy harvester based on c-axis tilted AlN thin film is investigated. Based on basic piezoelectric equations and static analysis of cantilever beam, the equations for generated energy (E) and open circuit voltage (Vo) were derived, and simulations were carried out to study the effects of geometry parameters and c-axis tilted angle. Results show that E and Vo of energy harvesters are greatly dependent on c-axis tilted angle and geometry parameters, while the coupling between c-axis tilted angle and geometry parameters is not strong. For a given structure size, E and Vo can be almost simultaneously improved by controlling c-axis tilted angle; compared with the case of normal c-axis angle, E with optimal c-axis tilted angle can be amplified by more than 3 times, and the Vo is amplified by about 2 times. E or Vo could be further improved by geometry parameters, while there is trade-off between them. These results can be used for the design and application of piezoelectric cantilevered vibration energy harvester.

Passive Q switching and mode-locking of Er:glass lasers using VO2 mirrors

NASA Astrophysics Data System (ADS)

Pollack, S. A.; Chang, D. B.; Chudnovky, F. A.; Khakhaev, I. A.

1995-09-01

Passive Q switching of an Er:glass laser with the pulse width varying between 14 and 80 ns has been demonstrated, using three resonator vanadium-dioxide-coated (VO2) mirror samples with temperature-dependent reflectivity and differing in the reflectivity contrast. The reflectivity changes because of a phase transition from a semiconductor to a metallic state. Broad band operating characteristics of VO2 mirrors provide Q switching over a wide range of wavelengths. In addition, mode-locked pulses with much shorter time scales have been observed, due to exciton formation and recombination. A simple criterion is derived for the allowable ambient temperatures at which the Q switching operates effectively. A simple relation has also been found relating the duration of the Q-switched pulse to the contrast in reflectivities of the two mirror phases.

Boron-tuning transition temperature of vanadium dioxide from rutile to monoclinic phase

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, J. J.; He, H. Y.; Xie, Y.

2014-11-21

The effect of the doped boron on the phase transition temperature between the monoclinic phase and the rutile phase of VO{sub 2} has been studied by performing first-principles calculations. It is found that the phase transition temperature decreases linearly with increasing the doping level of B in each system, no matter where the B atom is in the crystal. More importantly, the descent of the transition temperature is predicted to be as large as 83 K/at. % B, indicating that the boron concentration of only 0.5% can cause the phase transition at room temperature. These findings provide a new routinemore » of modulating the phase transition of VO{sub 2} and pave a way for the practicality of VO{sub 2} as an energy-efficient green material.« less

Preliminary observations in systemic oxygen consumption during targeted temperature management after cardiac arrest.

PubMed

Uber, Amy; Grossestreuer, Anne V; Ross, Catherine E; Patel, Parth V; Trehan, Ambica; Donnino, Michael W; Berg, Katherine M

2018-06-01

Limited data suggests low oxygen consumption (VO 2 ), driven by mitochondrial injury, is associated with mortality after cardiac arrest. Due to the challenges of measurement in the critically ill, post-arrest metabolism remains poorly characterized. We monitored VO 2 , carbon dioxide production (VCO 2 ) and the respiratory quotient (RQ) in post-arrest patients and explored associations with outcome. Using a gas exchange monitor, we measured continuous VO 2 and VCO 2 in post- arrest patients treated with targeted temperature management. We used area under the curve and medians over time to evaluate the association between VO 2 , VCO 2 , RQ and the VO 2 :lactate ratio with survival. In 17 patients, VO 2 in the first 12 h after return of spontaneous circulation (ROSC) was associated with survival (median in survivors 3.35 mL/kg/min [2.98,3.88] vs. non-survivors 2.61 mL/kg/min [2.21,2.94], p = .039). This did not persist over 24 h. The VO 2 :lactate ratio was associated with survival (median in survivors 1.4 [IQR: 1.1,1.7] vs. non-survivors 0.8 [IQR: 0.6,1.2] p < 0.001). Median RQ was 0.66 (IQR 0.63,0.70) and 71% of RQ measurements were <0.7. Patients with initial RQ < 0.7 had 17% survival versus 64% with initial RQ > 0.7 (p = .131). VCO 2 was not associated with survival. There was a significant association between VO 2 and mortality in the first 12 h after ROSC, but not over 24 h. Lower VO 2: lactate ratio was associated with mortality. A large percentage of patients had RQs below physiologic norms. Further research is needed to explore whether these parameters could have true prognostic value or be a potential treatment target. Copyright © 2018 Elsevier B.V. All rights reserved.

Epitaxial growth of VO2 by periodic annealing

NASA Astrophysics Data System (ADS)

Tashman, J. W.; Lee, J. H.; Paik, H.; Moyer, J. A.; Misra, R.; Mundy, J. A.; Spila, T.; Merz, T. A.; Schubert, J.; Muller, D. A.; Schiffer, P.; Schlom, D. G.

2014-02-01

We report the growth of ultrathin VO2 films on rutile TiO2 (001) substrates via reactive molecular-beam epitaxy. The films were formed by the cyclical deposition of amorphous vanadium and its subsequent oxidation and transformation to VO2 via solid-phase epitaxy. Significant metal-insulator transitions were observed in films as thin as 2.3 nm, where a resistance change ΔR/R of 25 was measured. Low angle annular dark field scanning transmission electron microscopy was used in conjunction with electron energy loss spectroscopy to study the film/substrate interface and revealed the vanadium to be tetravalent and the titanium interdiffusion to be limited to 1.6 nm.

Methods for measurement of energy expenditure and substrate concentrations in swimming rats.

PubMed

Benthem, L; Bolhuis, J W; van der Leest, J; Steffens, A B; Zock, J P; Zijlstra, W G

1994-07-01

A measuring system is described for the determination of oxygen consumption (Vo2) and carbon dioxide production (Vco2) in swimming rats. Vo2 and Vco2 were measured by means of an O2-analyzer (Ametek S3A) and a mass spectrometer (Balzers QMG 511), respectively, combined with a gas flow meter. The measurements were made in a 5-1 metabolic chamber on top of a swimming pool in which a water flow of 0.22 m/s was maintained. The rats were fitted with an indwelling catheter with its tip at the entrance of the right atrium for the repeated determination of energy substrate and hormone concentrations, before, during, and after swimming. The inaccuracy of the Vo2 and Vco2 measurements was 0.18% and 0.31% of the reading, respectively; the imprecision was 2.15% and 2.59%. This high accuracy and precision of the system was attained by measuring room air for 20 s after each 100 s of measuring air from the metabolic chamber, and by using demineralized water in the swimming pool. Vo2 during steady-state swimming was 1.89 +/- 0.06 mmol/kg.min (ca. 60% Vo2max), indicating moderate exercise. Respiratory quotient (RQ), during steady-state exercise, was 0.80 +/- 0.01. Vo2 and RQ resulted in rates for carbohydrate and fat utilization of 15.6 +/- 0.8 and 15.1 +/- 0.7 mg/kg.min, respectively.

Electrochemical gating-induced reversible and drastic resistance switching in VO2 nanowires

PubMed Central

Sasaki, Tsubasa; Ueda, Hiroki; Kanki, Teruo; Tanaka, Hidekazu

2015-01-01

Reversible and drastic modulation of the transport properties in vanadium dioxide (VO2) nanowires by electric field-induced hydrogenation at room temperature was demonstrated using the nanogaps separated by humid air in field-effect transistors with planer-type gates (PG-FET). These PG-FETs allowed us to investigate behavior of revealed hydrogen intercalation and diffusion aspects with time and spatial evolutions in nanowires. These results show that air nanogaps can operate as an electrochemical reaction field, even in a gaseous atmosphere, and offer new directions to explore emerging functions for electronic and energy devices in oxides. PMID:26584679

Deceptive meaning of oxygen uptake measured at the anaerobic threshold in patients with systolic heart failure and atrial fibrillation.

PubMed

Magrì, Damiano; Agostoni, Piergiuseppe; Corrà, Ugo; Passino, Claudio; Scrutinio, Domenico; Perrone-Filardi, Pasquale; Correale, Michele; Cattadori, Gaia; Metra, Marco; Girola, Davide; Piepoli, Massimo F; Iorio, AnnaMaria; Emdin, Michele; Raimondo, Rosa; Re, Federica; Cicoira, Mariantonietta; Belardinelli, Romualdo; Guazzi, Marco; Limongelli, Giuseppe; Clemenza, Francesco; Parati, Gianfranco; Frigerio, Maria; Casenghi, Matteo; Scardovi, Angela B; Ferraironi, Alessandro; Di Lenarda, Andrea; Bussotti, Maurizio; Apostolo, Anna; Paolillo, Stefania; La Gioia, Rocco; Gargiulo, Paola; Palermo, Pietro; Minà, Chiara; Farina, Stefania; Battaia, Elisa; Maruotti, Antonello; Pacileo, Giuseppe; Contini, Mauro; Oliva, Fabrizio; Ricci, Roberto; Sinagra, Gianfranco

2015-08-01

Oxygen uptake at the anaerobic threshold (VO2AT), a submaximal exercise-derived variable, independent of patients' motivation, is a marker of outcome in heart failure (HF). However, previous evidence of VO2AT values paradoxically higher in HF patients with permanent atrial fibrillation (AF) than in those with sinus rhythm (SR) raised uncertainties. We tested the prognostic role of VO2AT in a large cohort of systolic HF patients, focusing on possible differences between SR and AF. Altogether 2976 HF patients (2578 with SR and 398 with AF) were prospectively followed. Besides a clinical examination, each patient underwent a maximal cardiopulmonary exercise test (CPET). The follow-up was analysed for up to 1500 days. Cardiovascular death or urgent cardiac transplantation occurred in 303 patients (250 (9.6%) patients with SR and 53 (13.3%) patients with AF, p = 0.023). In the entire population, multivariate analysis including peak oxygen uptake (VO2) showed a prognostic capacity (C-index) similar to that obtained including VO2AT (0.76 vs 0.72). Also, left ventricular ejection fraction, ventilation vs carbon dioxide production slope, β-blocker and digoxin therapy proved to be significant prognostic indexes. The receiver-operating characteristic (ROC) curves analysis showed that the best predictive VO2AT cut-off for the SR group was 11.7 ml/kg/min, while it was 12.8 ml/kg/min for the AF group. VO2AT, a submaximal CPET-derived parameter, is reliable for long-term cardiovascular mortality prognostication in stable systolic HF. However, different VO2AT cut-off values between SR and AF HF patients should be adopted. © The European Society of Cardiology 2014.

Controlling the Temperature and Speed of the Phase Transition of VO 2 Microcrystals

DOE PAGES

Yoon, Joonseok; Kim, Howon; Chen, Xian; ...

2015-12-29

Here, we investigated the control of two important parameters of vanadium dioxide (VO 2 ) microcrystals, the phase transition temperature and speed, by varying microcrystal width. By using the reflectivity change between insulating and metallic phases, phase transition temperature is measured by optical microscopy. As the width of square cylinder-shaped microcrystals decreases from ~70 to ~1 μm, the phase transition temperature (67 °C for bulk) varied as much as 26.1 °C (19.7 °C) during heating (cooling). In addition, the propagation speed of phase boundary in the microcrystal, i.e., phase transition speed, is monitored at the onset of phase transition bymore » using the high-speed resistance measurement. The phase transition speed increases from 4.6 × 10 2 to 1.7 × 10 4 μm/s as the width decreases from ~50 to ~2 μm. While the statistical description for a heterogeneous nucleation process explains the size dependence on phase transition temperature of VO 2 , the increase of effective thermal exchange process is responsible for the enhancement of phase transition speed of small VO 2 microcrystals. These findings not only enhance the understanding of VO 2 intrinsic properties but also contribute to the development of innovative electronic devices.« less

Controlling the Temperature and Speed of the Phase Transition of VO 2 Microcrystals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yoon, Joonseok; Kim, Howon; Chen, Xian

Here, we investigated the control of two important parameters of vanadium dioxide (VO 2 ) microcrystals, the phase transition temperature and speed, by varying microcrystal width. By using the reflectivity change between insulating and metallic phases, phase transition temperature is measured by optical microscopy. As the width of square cylinder-shaped microcrystals decreases from ~70 to ~1 μm, the phase transition temperature (67 °C for bulk) varied as much as 26.1 °C (19.7 °C) during heating (cooling). In addition, the propagation speed of phase boundary in the microcrystal, i.e., phase transition speed, is monitored at the onset of phase transition bymore » using the high-speed resistance measurement. The phase transition speed increases from 4.6 × 10 2 to 1.7 × 10 4 μm/s as the width decreases from ~50 to ~2 μm. While the statistical description for a heterogeneous nucleation process explains the size dependence on phase transition temperature of VO 2 , the increase of effective thermal exchange process is responsible for the enhancement of phase transition speed of small VO 2 microcrystals. These findings not only enhance the understanding of VO 2 intrinsic properties but also contribute to the development of innovative electronic devices.« less

Degradation process by effect of water molecules during negative bias temperature stress in amorphous-InGaZnO thin-film transistor

NASA Astrophysics Data System (ADS)

Lee, Yeol-Hyeong; Cho, Yong-Jung; Kim, Woo-Sic; Park, Jeong Ki; Kim, Geon Tae; Kim, Ohyun

2017-10-01

We explained how H2O degrades amorphous-InGaZnO thin-film transistors. H2O caused serious degradation only during negative bias temperature stress (NBTS). Degradation was caused by molecules that were absorbed or diffused from the outside. We suggest that degradation under NBTS is caused by the migration of hydrogen ions among oxygen vacancies. Under illumination, the soaking time t S did not affect the threshold voltage shift ΔV th. We consider that this independence occurred because illumination caused ionization from the oxygen vacancy VO state to VO 2+, which impeded hydrogen migration induced by electric field and thereby protected the device from degradation after exposure to water.

Bymixer system can measure O2 uptake and CO2 elimination in the anesthesia circle circuit.

PubMed

Rosenbaum, Abraham; Kirby, Christopher W; Breen, Peter H

2007-06-01

The ability to measure carbon dioxide elimination (Vco(2)), oxygen uptake (Vo(2)), and R (respiratory exchange ratio, Vco(2)/Vo(2)) during anesthesia may help the non-invasive detection of critical events (e.g., abrupt decrease in cardiac output) and metabolic upset (e.g., onset of anaerobic metabolism). We have developed a new clinical bymixer (inline mixing chamber) that can measure mixed inspired and expired gas fractions in the anesthesia circle circuit. The addition of a standard anesthesia gas analyzer and flowmeter, and a new airway temperature and humidity sensor, allow determinations of Vco(2) and Vo(2) at the airway opening of the circle circuit. Over a range of tidal volume and frequency, Vco(2) and Vo(2) were compared to reference values generated by the combustion of metered liquid ethanol in a new metabolic lung simulator. By linear regression, bymixer-flow measurements of Vco(2) (slope = 1.02, Y-intercept = -5.31, coefficient of determination, R(2) = 0.998) and Vo(2) (slope = 1.05, Y-intercept = -4.34, R(2) = 0.993) correlated closely to the reference values generated by the metabolic lung simulator. Limits of agreement analysis generated percent errors (mean +/- 1.96 SD) of -1.2 +/- 7.2% for Vco(2) and 2.5 +/- 9.8% for Vo(2). The new clinical bymixer is compact, lightweight, disposable, inexpensive, and has a fast and adjustable response time (time constant about 14 sec). Anesthesia circle circuit integrity is maintained. Bymixer-flow measurements of Vco(2) and Vo(2) are accurate and may add to clinical monitoring under anesthesia and surgery.

Ferromagnetism induced by oxygen-vacancy complex in (Mn, in) codoped ZnO

NASA Astrophysics Data System (ADS)

Wu, Kongping; Gu, Shulin; Tang, Kun; Zhu, Shunming; Zhou, Mengran; Huang, Yourui; Xu, Mingxiang; Zhang, Rong; Zheng, Youdou

2012-07-01

Mn doped Zinc oxide (ZnO) thin films were prepared by metal organic chemical vapor deposition (MOCVD) technique. Structural characterizations by X-ray diffraction technique (XRD) and photoluminescence (PL) indicate the crystal quality of ZnO films. PL and Raman show a large fraction of oxygen vacancies (VO2+) are generated by vacuum annealed the film. The enhancement of ferromagnetism in post-annealed (Mn, In) codoped ZnO could result from VO2+ incorporation. The effect of VO2+ on the magnetic properties of (Mn, In) codoped ZnO has been studied by first-principles calculations. It is found that only In donor cannot induce ferromagnetism (FM) in Mn-doped ZnO. Besides, the presence of VO2+ makes the Mn empty 3d-t2g minority state broadened, and a t2g-VO2+ hybrid level at the conduction band minimum forms. The presence of VO2+ can lead to strong ferromagnetic coupling with the nearest neighboring Mn cation by BMP model based on defects reveal that the ferromagnetic exchange is mediated by the donor impurity state, which mainly consists of Mn 3d electrons trapped in oxygen vacancies.

Hydrothermal route to VO2 (B) nanorods: controlled synthesis and characterization

NASA Astrophysics Data System (ADS)

Song, Shaokun; Huang, Qiwei; Zhu, Wanting

2017-10-01

One-dimensional vanadium dioxides have attracted intensive attention owing to their distinctive structure and novel applications in catalysis, high energy lithium-ion batteries, chemical sensors/actuators and electrochemical devices etc. In this paper, large-scale VO2 (B) nanorods have been successfully synthesized via a versatile and environment friendly hydrothermal strategy using V2O5 as vanadium source and carbohydrates/alcohols as reductant. The obtained samples are characterized by XRD, FT-IR, TEM, and XPS techniques to investigate the effects of chemical parameters such as reductants, temperature, and time of synthesis on the structure and morphology of products. Results show that pure B phase VO2 with homogeneous nanorod-like morphology can be prepared easily at 180 °C for 3 days with glycerol as reluctant. Typically, the nanorod-like products are 0.5-1 μm long and 50 nm width. Furthermore, it is also confirmed that the products are consisted of VO2, corresponding to the B phase. More importantly, this novel approach is efficient, free of any harmful solvents and surfactants. Therefore, this efficient, green, and cost-saving route will have great potential in the large-scale fabrication of 1D VO2 (B) nanorods from the economic and environmental point of view.

Chromium–niobium co-doped vanadium dioxide films: Large temperature coefficient of resistance and practically no thermal hysteresis of the metal–insulator transition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Miyazaki, Kenichi, E-mail: kenichi-miyazaki@denso.co.jp, E-mail: k.shibuya@aist.go.jp; University of Tsukuba, Tsukuba 305-8571; Shibuya, Keisuke, E-mail: kenichi-miyazaki@denso.co.jp, E-mail: k.shibuya@aist.go.jp

We investigated the effects of chromium (Cr) and niobium (Nb) co-doping on the temperature coefficient of resistance (TCR) and the thermal hysteresis of the metal–insulator transition of vanadium dioxide (VO{sub 2}) films. We determined the TCR and thermal-hysteresis-width diagram of the V{sub 1−x−y}Cr{sub x}Nb{sub y}O{sub 2} films by electrical-transport measurements and we found that the doping conditions x ≳ y and x + y ≥ 0.1 are appropriate for simultaneously realizing a large TCR value and an absence of thermal hysteresis in the films. By using these findings, we developed a V{sub 0.90}Cr{sub 0.06}Nb{sub 0.04}O{sub 2} film grown on amore » TiO{sub 2}-buffered SiO{sub 2}/Si substrate that showed practically no thermal hysteresis while retaining a large TCR of 11.9%/K. This study has potential applications in the development of VO{sub 2}-based uncooled bolometers.« less

Dependence of annealing temperature on microstructure and photoelectrical properties of vanadium oxide thin films prepared by DC reactive sputtering

NASA Astrophysics Data System (ADS)

Li, Yan; Zhang, Dongping; Wang, Bo; Liang, Guangxing; Zheng, Zhuanghao; Luo, Jingting; Cai, Xingmin; Fan, Ping

2013-12-01

Vanadium oxide thin films were prepared by DC reactive sputtering method, and the samples were annealed in Ar atmosphere under different temperature for 2 hours. The microstructure, optical and electrical properties of the as-grown and treated samples were characterized by XRD, spectrophotometer, and four-probe technique, respectively. XRD results investigated that the main content of the annealed sample are VO2 and V2O5. With annealing temperature increasing, the intensity of the VO2 phase diffraction peak strengthened. The electrical properties reveal that the annealed samples exhibit semiconductor-to-metal transition characteristic at about 40°C. Comparison of transmission spectra of the samples at room temperature and 100°C, a drastic drop in IR region is found.

Non-Congruence of Thermally Induced Structural and Electronic Transitions in VO2

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nag, Joyeeta; HaglundJr., Richard F; Payzant, E Andrew

2012-01-01

The multifunctional properties of vanadium dioxide (VO2) arise from coupled first-order phase transitions: an insulator-to-metal transition (IMT) and a structural phase transition (SPT) from monoclinic to tetragonal. The characteristic signatures of the IMT and SPT are the hysteresis loops that track the phase transition from nucleation to stabilization of a new phase and back. A long-standing question about the mechanism of the VO2 phase transition is whether and how the almost-simultaneous electronic and structural transitions are related. Here we report independent measurements of the IMT and SPT hystereses in epitaxial VO2 films with differing morphologies. We show that, in bothmore » cases, the hystereses are not congruent, that the structural change requires more energy to reach completion. This result is independent of nanoscale morphology, so that the non- congruence is an intrinsic property of the VO2 phase transition. Our conclusion is supported by effective-medium calculations of the dielectric function incorporating the measured volume fractions of the monoclinic and tetragonal states. The results are consistent with the existence of an monoclinic correlated metallic state in which the electron- electron correlations characteristic of the monoclinic state begin to disappear before the transition to the tetragonal structural state.« less

Changes in Ventilatory Response to Exercise in Trained Athletes: Respiratory Physiological Benefits Beyond Cardiovascular Performance.

PubMed

di Paco, Adriano; Dubé, Bruno-Pierre; Laveneziana, Pierantonio

2017-05-01

The beneficial impact of an 8-month competitive season on the ventilatory profile response to exercise in soccer players has never been evaluated. Ventilatory profile (evaluated by determining individual tidal volume [V T ] relative to minute ventilation [V E ] inflection points during exercise) and metabolic responses to incremental exercise were evaluated in 2 professional soccer teams before and after an 8-month competitive season. No differences between teams in anthropometric characteristics or in resting cardiopulmonary variables, included oxygen uptake (VO 2 ) and heart rate (HR), before and during the competitive season were found. At iso-speed, there were overall improvements in carbon dioxide output (VCO 2 ), V E /VO 2 , V E /VCO 2 , V E and respiratory frequency (fR) during the season. The V T /V E inflection points 1 and 2 occurred with greater exercise time, HR, VO 2 , VCO 2 , V E and V T during the competitive season. Despite very high baseline performance and a negligible improvement in VO 2 , an 8-month competitive season improved ventilatory profile response to exercise in elite athletes. Copyright © 2016 SEPAR. Publicado por Elsevier España, S.L.U. All rights reserved.

Spontaneous generation of vortex and coherent vector beams from a thin-slice c-cut Nd:GdVO4 laser with wide-aperture laser-diode end pumping: application to highly sensitive rotational and translational Doppler velocimetry

NASA Astrophysics Data System (ADS)

Otsuka, Kenju; Chu, Shu-Chun

2017-07-01

Selective excitation of Laguerre-Gauss modes (optical vortices: helical LG0,2 and LG0,1), reflecting their weak transverse cross-saturation of population inversions against a preceding higher-order Ince-Gauss (IG0,2) or Hermite-Gauss (HG2,1) mode, was observed in a thin-slice c-cut Nd:GdVO4 laser with wide-aperture laser-diode end pumping. Single-frequency coherent vector beams were generated through the transverse mode locking of a pair of orthogonally polarized IG2,0 and LG0,2 or HG2,1 and LG0,1 modes. Highly sensitive self-mixing rotational and translational Doppler velocimetry is demonstrated by using vortex and coherent vector beams.

A comparison of VO2max and metabolic variables between treadmill running and treadmill skating.

PubMed

Koepp, Kriston K; Janot, Jeffrey M

2008-03-01

The purpose of this study was to determine differences in VO2max and metabolic variables between treadmill running and treadmill skating. This study also examined VO2max responses during a continuous skating treadmill protocol and a discontinuous skating treadmill protocol. Sixteen male high school hockey players, who had a mean age of 16 +/- 1 years and were of an above-average fitness level, participated in this study. All subjects completed 4 exercise trials: a 1-hour skating treadmill familiarization trial, a treadmill running trial, and 2 randomized skating treadmill trials. Minute ventilation (VE), oxygen consumption VO2), carbon dioxide production VCO2), respiratory exchange ratio (RER), and heart rate were averaged every 15 seconds up to VO2max for each exercise test. The results showed that there was a significant difference (P < 0.05) for VO2max (mL.kg.min) and maximal VCO2 (L.min) between the running treadmill protocol and discontinuous skating treadmill protocol. There was also a significant difference for maximal RER between the discontinuous and continuous skating treadmill protocol and between the discontinuous skating treadmill protocol and running treadmill protocol. In conclusion, the running treadmill elicited a greater VO2max (mL.kg.min) than the skating treadmill did, but when it comes to specificity of ice skating, the skating treadmill may be ideal. Also, there was no significant difference between the discontinuous and continuous skating treadmill protocols. Therefore, a continuous protocol is possible on the skating treadmill without compromising correct skating position and physiologic responses. However, the continuous skating treadmill protocol should undergo validation before other scientists, coaches, and strength and conditioning professionals can apply it correctly.

Room-temperature subnanosecond waveguide lasers in Nd:YVO4 Q-switched by phase-change VO2: A comparison with 2D materials

NASA Astrophysics Data System (ADS)

Nie, Weijie; Li, Rang; Cheng, Chen; Chen, Yanxue; Lu, Qingming; Romero, Carolina; Vázquez de Aldana, Javier R.; Hao, Xiaotao; Chen, Feng

2017-04-01

We report on room-temperature subnanosecond waveguide laser operation at 1064 nm in a Nd:YVO4 crystal waveguide through Q-switching of phase-change nanomaterial vanadium dioxide (VO2). The unique feature of VO2 nanomaterial from the insulating to metallic phases offers low-saturation-intensity nonlinear absorptions of light for subnanosecond pulse generation. The low-loss waveguide is fabricated by using the femtosecond laser writing with depressed cladding geometry. Under optical pump at 808 nm, efficient pulsed laser has been achieved in the Nd:YVO4 waveguide, reaching minimum pulse duration of 690 ps and maximum output average power of 66.7 mW. To compare the Q-switched laser performances by VO2 saturable absorber with those based on two-dimensional materials, the 1064-nm laser pulses have been realized in the same waveguide platform with either graphene or transition metal dichalcogenide (in this work, WS2) coated mirror. The results on 2D material Q-switched waveguide lasers have shown that the shortest pulses are with 22-ns duration, whilst the maximum output average powers reach ~161.9 mW. This work shows the obvious difference on the lasing properties based on phase-change material and 2D materials, and suggests potential applications of VO2 as low-cost saturable absorber for subnanosecond laser generation.

Room-temperature subnanosecond waveguide lasers in Nd:YVO4 Q-switched by phase-change VO2: A comparison with 2D materials.

PubMed

Nie, Weijie; Li, Rang; Cheng, Chen; Chen, Yanxue; Lu, Qingming; Romero, Carolina; Vázquez de Aldana, Javier R; Hao, Xiaotao; Chen, Feng

2017-04-06

We report on room-temperature subnanosecond waveguide laser operation at 1064 nm in a Nd:YVO 4 crystal waveguide through Q-switching of phase-change nanomaterial vanadium dioxide (VO 2 ). The unique feature of VO 2 nanomaterial from the insulating to metallic phases offers low-saturation-intensity nonlinear absorptions of light for subnanosecond pulse generation. The low-loss waveguide is fabricated by using the femtosecond laser writing with depressed cladding geometry. Under optical pump at 808 nm, efficient pulsed laser has been achieved in the Nd:YVO 4 waveguide, reaching minimum pulse duration of 690 ps and maximum output average power of 66.7 mW. To compare the Q-switched laser performances by VO 2 saturable absorber with those based on two-dimensional materials, the 1064-nm laser pulses have been realized in the same waveguide platform with either graphene or transition metal dichalcogenide (in this work, WS 2 ) coated mirror. The results on 2D material Q-switched waveguide lasers have shown that the shortest pulses are with 22-ns duration, whilst the maximum output average powers reach ~161.9 mW. This work shows the obvious difference on the lasing properties based on phase-change material and 2D materials, and suggests potential applications of VO 2 as low-cost saturable absorber for subnanosecond laser generation.

Tunable optical switching in the near-infrared spectral regime by employing plasmonic nanoantennas containing phase change materials.

PubMed

Savaliya, Priten B; Thomas, Arun; Dua, Rishi; Dhawan, Anuj

2017-10-02

We propose the design of switchable plasmonic nanoantennas (SPNs) that can be employed for optical switching in the near-infrared regime. The proposed SPNs consist of nanoantenna structures made up of a plasmonic metal (gold) such that these nanoantennas are filled with a switchable material (vanadium dioxide). We compare the results of these SPNs with inverted SPN structures that consist of gold nanoantenna structures surrounded by a layer of vanadium dioxide (VO 2 ) on their outer surface. These nanoantennas demonstrate switching of electric-field intensity enhancement (EFIE) between two states (On and Off states), which can be induced thermally, optically or electrically. The On and Off states of the nanoantennas correspond to the metallic and semiconductor states, respectively of the VO 2 film inside or around the nanoantennas, as the VO 2 film exhibits phase transition from its semiconductor state to the metallic state upon application of thermal, optical, or electrical energy. We employ finite-difference time-domain (FDTD) simulations to demonstrate switching in the EFIE for four different SPN geometries - nanorod-dipole, bowtie, planar trapezoidal toothed log-periodic, and rod-disk - and compare their near-field distributions for the On and Off states of the SPNs. We also demonstrate that the resonance wavelength of the EFIE spectra gets substantially modified when these SPNs switch between the two states.

Effect of the KOH chemical treatment on the optical and photocatalytic properties of BiVO4 thin films

NASA Astrophysics Data System (ADS)

Mirabal-Rojas, R.; Depablos-Rivera, O.; Thalluri, S. M.; Medina, J. C.; Bizarro, M.; Perez-Alvarez, J.; Rodil, S. E.; Zeinert, A.

2016-04-01

In this work, we present the structural, optical and photocatalytic properties of BiVO4 thin films produced by a dual-magnetron sputtering process using both Bi2O3 (α-phase, 99.98 % purity) and V (99.9 % purity) targets under Ar/O2 atmosphere with a ratio of 18:2. The films were deposited varying the power applied to the targets to obtain stoichiometric films, and the monoclinic structure was achieved by post-deposition annealing. The dual process was chosen to better control the Bi/V ratio since Bi and V have very different sputtering yields. In particular, the influence of a chemical treatment using potassium hydroxide (KOH) on the optical properties and different dye discolorations (acid blue 113 and methyl orange) is discussed. The optical properties were studied by reflectance and transmittance spectroscopy, where the spectra were fitted to obtain the refractive index dispersion and the optical band gap of the BiVO4 as a function of the film structure, as determined by X-ray diffraction and Raman spectroscopy.

Surface structural reconstruction of SrVO3 thin films on SrTiO3 (001)

NASA Astrophysics Data System (ADS)

Wang, Gaomin; Saghayezhian, Mohammad; Chen, Lina; Guo, Hangwen; Zhang, Jiandi

Paramagnetic metallic oxide SrVO3>(SVO) is an itinerant system known to undergo thickness-induced metal-insulator-transition (MIT) in ultrathin film form, which makes it a prototype system for the study of the mechanism behind metal-insulator-transition like structure distortion, electron correlations and disorder-induced localization. We have grown SrVO3 thin film with atomically flat surface through the layer-by-layer deposition by laser Molecular Beam Epitaxy (laser-MBE) on SrTiO3 (001) surface. Low Energy Electron Diffraction (LEED) measurements reveal that there is a (√2X √2) R45°surface reconstruction independent of film thickness. By using LEED-I(V) structure refinement, we determine the surface structure. In combination with X-ray Photoelectron Spectroscopy (XPS) and Scanning Tunneling Microscopy (STM), we discuss the implication on the MIT in ultrathin films below 2-3 unit cell thickness. This work is supported by the National Science Foundation under the NSF EPSCoR Cooperative Agreement No. EPS-1003897 with additional support from the Louisiana Board of Regents.

Optical and Nonlinear Optical Response of Light Sensor Thin Films

PubMed Central

Liu, Huimin; Rua, Armando; Vasquez, Omar; Vikhnin, Valentin S.; Fernandez, Felix E.; Fonseca, Luis F.; Resto, Oscar; Weisz, Svi Z.

2005-01-01

For potential ultrafast optical sensor application, both VO2 thin films and nanocomposite crystal-Si enriched SiO2 thin films grown on fused quartz substrates were successfully prepared using pulsed laser deposition (PLD) and RF co-sputtering techniques. In photoluminescence (PL) measurement c-Si/SiO2 film contains nanoparticles of crystal Si exhibits strong red emission with the band maximum ranging from 580 to 750 nm. With ultrashort pulsed laser excitation all films show extremely intense and ultrafast nonlinear optical (NLO) response. The recorded holography from all these thin films in a degenerate-four-wave-mixing configuration shows extremely large third-order response. For VO2 thin films, an optically induced semiconductor-to-metal phase transition (PT) immediately occurred upon laser excitation. it accompanied. It turns out that the fast excited state dynamics was responsible to the induced PT. For c-Si/SiO2 film, its NLO response comes from the contribution of charge carriers created by laser excitation in conduction band of the c-Si nanoparticles. It was verified by introducing Eu3+ which is often used as a probe sensing the environment variations. It turns out that the entire excited state dynamical process associated with the creation, movement and trapping of the charge carriers has a characteristic 500 ps duration.

Nanoscale thermal imaging of VO2 via Poole-Frenkel conduction

NASA Astrophysics Data System (ADS)

Spitzig, Alyson; Hoffman, Jason D.; Pivonka, Adam E.; Mickalide, Harry; Frenzel, Alex; Kim, Jeehoon; Ko, Changhyun; Zhou, You; O'Connor, Kevin; Hudson, Eric W.; Ramanathan, Shriram; Hoffman, Jennifer E.

We present a novel method for nanoscale thermal imaging of insulating thin films. We demonstrate this method on VO2, which undergoes a sharp insulator-to-metal transition at 340 K. We sweep the voltage applied to a conducting atomic force microscope tip in contact mode at room temperature and measure the resultant current through a VO2 film. The Poole-Frenkel (PF) conduction mechanism, which dominates in the insulating state of VO2, is fit to extract the local temperature of the film using fundamental constants and known film properties. We measure the local electric field and temperature immediately preceding the insulator-to-metal transition in VO2 to determine whether the transition can be triggered by an applied electric field alone. We calculate an average temperature of 334 +/- 5 K, implying that Joule heating has locally warmed the sample very close to the transition temperature. Our thermometry technique opens up the possibility to measure the local temperature of any film dominated by the PF conduction mechanism, and presents the opportunity to extend our technique to other conduction mechanisms. Canada Excellence Research Chair program and NSERC - CGSM.

Pulsed laser-deposited VO2 thin films on Pt layers

NASA Astrophysics Data System (ADS)

Sakai, Joe; Zaghrioui, Mustapha; Ta Phuoc, Vinh; Roger, Sylvain; Autret-Lambert, Cécile; Okimura, Kunio

2013-03-01

VO2 films were deposited on Pt (111)/TiO2/SiO2/Si (001) substrates by means of a pulsed laser deposition technique. An x-ray diffraction peak at 2θ = 39.9° was deconvoluted into two pseudo-Voigt profiles of Pt (111) and VOx-originated components. The VOx diffraction peak was more obvious in a VOx/Pt (111)/Al2O3 (0001) sample, having a narrower width compared with a VO2/Al2O3 (0001) sample. Temperature-controlled Raman spectroscopy for the VOx/Pt/TiO2/SiO2/Si sample has revealed the monoclinic VO2 phase at low temperature and the structural phase transition at about 72 °C in a heating process. The electronic conductive nature at the high temperature phase was confirmed by near normal incidence infrared reflectivity measurements. Out-of-plane current-voltage characteristics showed an electric field-induced resistance switching at a voltage as low as 0.2 V for a 50 nm-thick film. A survey of present and previous results suggests an experimental law that the transition voltage of VO2 is proportional to the square root of the electrodes distance.

Intraoperative baseline oxygen consumption as a prognostic factor in emergency open abdominal surgery.

PubMed

Masuda, Toshiro; Kuramoto, Masafumi; Tanimoto, Hironari; Yamamoto, Kenichiro; Ikeshima, Satoshi; Kitano, Yuuki; Kuroda, Daisuke; Shimada, Shinya; Baba, Hideo

2016-04-01

A new anesthesia system, the E-CAIOVX (GE Healthcare) enables the continuous monitoring of oxygen consumption (VO2) and carbon dioxide elimination (VCO2) during the surgical operation. The aim of this study was to evaluate the prognostic role of intraoperative baseline VO2 and VCO2 in an emergency open abdominal operation. A total of 103 patients who had an emergency open abdominal operation were enrolled in the study. VO2 and VCO2 were continuously measured from the induction of anesthesia to the end of the operation. There were significant correlations between intraoperative baseline VO2 and body surface area (BSA; P < .001, r = 0.68), VO2 and tidal volume (P < .001, r = 0.59), and VO2 and baseline body temperature (P < .0001, r = 0.49). Also, there were significant correlations between intraoperative baseline VCO2 and BSA (P < .001, r = 0.70), VCO2 and tidal volume (P < .001, r = 0.70), and VCO2 and body temperature (P < .001, r = 0.41). Fifteen (14.6%) of the 103 patients died within 4 months after the operation without having been discharged from hospital. Baseline VO2/BSA was higher in surviving patients (123.7 ± 23.6 mL/min ∙ m(2)) than the deceased (103.8 ± 15.6 mL/min ∙ m(2); P = .002). There was no significant difference in baseline VCO2/BSA levels between surviving (106.2 ± 20.1 mL/min ∙ m(2)) and deceased patients (99.4 ± 21.4 mL/min ∙ m(2)). In multivariate analysis, baseline body temperature lower than 36.2°C (P = .02), serum albumin less than 3.0 g/dL (P = .002), and baseline VO2/BSA less than 111.9 mL/min ∙ m(2) (P = .03) were independent factors. Baseline low VO2/BSA less than 111.9 mL/min ∙ m(2) was one of the poor predictors for the prognosis of an emergency open abdominal surgery. Copyright © 2015 Elsevier Inc. All rights reserved.

Solution-Processed VO2-SiO2 Composite Films with Simultaneously Enhanced Luminous Transmittance, Solar Modulation Ability and Anti-Oxidation property

PubMed Central

Zhao, Lili; Miao, Lei; Liu, Chengyan; Li, Chao; Asaka, Toru; Kang, Yipu; Iwamoto, Yuji; Tanemura, Sakae; Gu, Hui; Su, Huirong

2014-01-01

Recently, researchers spare no efforts to fabricate desirable vanadium dioxide (VO2) film which provides simultaneously high luminous transmittance and outstanding solar modulation ability, yet progress towards the optimization of one aspect always comes at the expense of the other. Our research devotes to finding a reproducible economic solution-processed strategy for fabricating VO2-SiO2 composite films, with the aim of boosting the performance of both aspects. Compare to VO2 film, an improvement of 18.9% (from 29.6% to 48.5%) in the luminous transmittance as well as an increase of 6.0% (from 9.7% to 15.7%) in solar modulation efficiency is achieved when the molar ratio of Si/V attains 0.8. Based on the effective medium theory, we simulate the optical spectra of the composite films and the best thermochromic property is obtained when the filling factor attains 0.5, which is consistent with the experimental results. Meanwhile, the improvement of chemical stability for the composite film against oxidation has been confirmed. Tungsten is introduced to reduce the phase transition temperature to the ambient temperature, while maintain the thermochromism required for application as smart window. Our research set forth a new avenue in promoting practical applications of VO2-based thermochromic fenestration. PMID:25384345

Solution-Processed VO2-SiO2 Composite Films with Simultaneously Enhanced Luminous Transmittance, Solar Modulation Ability and Anti-Oxidation property

NASA Astrophysics Data System (ADS)

Zhao, Lili; Miao, Lei; Liu, Chengyan; Li, Chao; Asaka, Toru; Kang, Yipu; Iwamoto, Yuji; Tanemura, Sakae; Gu, Hui; Su, Huirong

2014-11-01

Recently, researchers spare no efforts to fabricate desirable vanadium dioxide (VO2) film which provides simultaneously high luminous transmittance and outstanding solar modulation ability, yet progress towards the optimization of one aspect always comes at the expense of the other. Our research devotes to finding a reproducible economic solution-processed strategy for fabricating VO2-SiO2 composite films, with the aim of boosting the performance of both aspects. Compare to VO2 film, an improvement of 18.9% (from 29.6% to 48.5%) in the luminous transmittance as well as an increase of 6.0% (from 9.7% to 15.7%) in solar modulation efficiency is achieved when the molar ratio of Si/V attains 0.8. Based on the effective medium theory, we simulate the optical spectra of the composite films and the best thermochromic property is obtained when the filling factor attains 0.5, which is consistent with the experimental results. Meanwhile, the improvement of chemical stability for the composite film against oxidation has been confirmed. Tungsten is introduced to reduce the phase transition temperature to the ambient temperature, while maintain the thermochromism required for application as smart window. Our research set forth a new avenue in promoting practical applications of VO2-based thermochromic fenestration.

Electrical Conducting and Mechanism of Oxygen-Deficient Tin Oxide Films Deposited by RF Magnetron Sputtering at Various O2/Ar Ratios

NASA Astrophysics Data System (ADS)

Wang, Qi; Wang, Chengbiao; Lv, Changchun; Wang, Yang; Peng, Zhijian; Fu, Xiuli

Oxygen-deficient tin oxide thin films were prepared by radiofrequency magnetron sputtering with a sintered non-stoichiometric tin oxide ceramic target under an atmosphere of various ratios of O2/Ar from pure Ar to 1:1. X-ray diffraction analysis showed that the thin films were polycrystalline with relatively strong (1 1 0), (1 0 1) and (2 1 1) diffraction peaks. Scanning electron microscopy observation revealed that the thin films prepared at different O2/Ar ratios were all of relatively dense and homogeneous structure. With increasing O2/Ar ratio, the grain size of the films decreased slightly, and their chemical composition became close to the stoichiometric SnO2; but the deposition rate as well as film thickness increased first and then decreased sharply. It was revealed that the main defect in obtained films was oxygen vacancy (VO), and as the O2/Ar ratio increased, the concentration of VO fell down monotonously, which would lead to an increased electrical resistivity.

Nanoscale self-templating for oxide epitaxy with large symmetry mismatch

DOE PAGES

Gao, Xiang; Lee, Shinbuhm; Nichols, John A.; ...

2016-12-02

Direct observations using scanning transmission electron microscopy unveil an intriguing interfacial bi-layer that enables epitaxial growth of a strain-free, monoclinic, bronze-phase VO 2(B) thin film on a perovskite SrTiO 3 (STO) substrate. For this study, we observe an ultrathin (2–3 unit cells) interlayer best described as highly strained VO 2(B) nanodomains combined with an extra (Ti,V)O 2 layer on the TiO 2 terminated STO (001) surface. By forming a fully coherent interface with the STO substrate and a semi-coherent interface with the strain-free epitaxial VO 2(B) film above, the interfacial bi-layer enables the epitaxial connection of the two materials despitemore » their large symmetry and lattice mismatch.« less

Synthesis and thermochromic property studies on W doped VO2 films fabricated by sol-gel method.

PubMed

Pan, Guoping; Yin, Jinhua; Ji, Keli; Li, Xiang; Cheng, Xingwang; Jin, Haibo; Liu, Jiping

2017-07-21

Tungsten-doped VO 2 thin films have been synthesized by a modified sol-gel process and followed by a post annealing. Vanadium pentoxide and tungstic acid as raw materials with the addition of hydrogen peroxide, concentrated hydrochloric acid (catalyst) and oxalic acid used as reducing agent were reacted in isobutanol. Finally, the uniform sol of vanadyl oxalate in isobutanol solvent was obtained as precursor. Detailed study suggested that W doped in VO 2 introduces additional electron carriers and induces the formation of V 3+ . Post annealing under vacuum promotes the releasing of chemical stress and generates oxygen vacancies in the samples. Temperature dependent transmittance study revealed that the releasing of chemical stress and deliberately introducing oxygen vacancies in W-doped VO 2 films have positive effects on enhancing its switching ability in the infrared transmittance as the metal-insulator transition (MIT) occurs. The largest switching of transmittance was obtained about 48% in the infrared range at 43 °C in 1.5%W doped VO 2 films, which is significantly larger than the reported ones. The findings in this work open a new way to synthesize the novel and thermochromic W doped VO 2 films with facility and low cost. Therefore, it has extensive application to construct smart windows and electronic devices.

Porous silicon-VO{sub 2} based hybrids as possible optical temperature sensor: Wavelength-dependent optical switching from visible to near-infrared range

DOE Office of Scientific and Technical Information (OSTI.GOV)

Antunez, E. E.; Salazar-Kuri, U.; Estevez, J. O.

Morphological properties of thermochromic VO{sub 2}—porous silicon based hybrids reveal the growth of well-crystalized nanometer-scale features of VO{sub 2} as compared with typical submicron granular structure obtained in thin films deposited on flat substrates. Structural characterization performed as a function of temperature via grazing incidence X-ray diffraction and micro-Raman demonstrate reversible semiconductor-metal transition of the hybrid, changing from a low-temperature monoclinic VO{sub 2}(M) to a high-temperature tetragonal rutile VO{sub 2}(R) crystalline structure, coupled with a decrease in phase transition temperature. Effective optical response studied in terms of red/blue shift of the reflectance spectra results in a wavelength-dependent optical switching withmore » temperature. As compared to VO{sub 2} film over crystalline silicon substrate, the hybrid structure is found to demonstrate up to 3-fold increase in the change of reflectivity with temperature, an enlarged hysteresis loop and a wider operational window for its potential application as an optical temperature sensor. Such silicon based hybrids represent an exciting class of functional materials to display thermally triggered optical switching culminated by the characteristics of each of the constituent blocks as well as device compatibility with standard integrated circuit technology.« less

Highly efficient photocatalytic conversion of solar energy to hydrogen by WO3/BiVO4 core-shell heterojunction nanorods

NASA Astrophysics Data System (ADS)

Kosar, Sonya; Pihosh, Yuriy; Bekarevich, Raman; Mitsuishi, Kazutaka; Mawatari, Kazuma; Kazoe, Yutaka; Kitamori, Takehiko; Tosa, Masahiro; Tarasov, Alexey B.; Goodilin, Eugene A.; Struk, Yaroslav M.; Kondo, Michio; Turkevych, Ivan

2018-04-01

Photocatalytic splitting of water under solar light has proved itself to be a promising approach toward the utilization of solar energy and the generation of environmentally friendly fuel in a form of hydrogen. In this work, we demonstrate highly efficient solar-to-hydrogen conversion efficiency of 7.7% by photovoltaic-photoelectrochemical (PV-PEC) device based on hybrid MAPbI3 perovskite PV cell and WO3/BiVO4 core-shell nanorods PEC cell tandem that utilizes spectral splitting approach. Although BiVO4 is characterized by intrinsically high recombination rate of photogenerated carriers, this is not an issue for WO3/BiVO4 core-shell nanorods, where highly conductive WO3 cores are combined with extremely thin absorber BiVO4 shell layer. Since the BiVO4 layer is thinner than the characteristic carrier diffusion length, the photogenerated charge carriers are separated at the WO3/BiVO4 heterojunction before their recombination. Also, such architecture provides sufficient optical thickness even for extremely thin BiVO4 layer due to efficient light trapping in the core-shell WO3/BiVO4 nanorods with high aspect ratio. We also demonstrate that the concept of fill factor can be used to compare I-V characteristics of different photoanodes regarding their optimization for PV/PEC tandem devices.

Combined effects of inspired oxygen, carbon dioxide, and carbon monoxide on oxygen transport and aerobic capacity.

PubMed

Crocker, George H; Toth, Balazs; Jones, James H

2013-09-01

We hypothesized that breathing hypoxic, hypercapnic, and CO-containing gases together reduces maximal aerobic capacity (Vo2max) as the sum of each gas' individual effect on Vo2max. To test this hypothesis, goats breathed combinations of inspired O2 fraction (FiO2) of 0.06-0.21 and inspired CO2 fraction of 0.00 or 0.05, with and without inspired CO that elevated carboxyhemoglobin fraction (FHbCO) to 0.02-0.45, while running on a treadmill at speeds eliciting Vo2max. Individually, hypoxia and elevated FHbCO decreased fractional Vo2max (FVo2max, fraction of a goat's Vo2max breathing air) in linear, dose-dependent manners; hypercapnia did not change Vo2max. Concomitant hypoxia and elevated FHbCO decreased Vo2max less than the individual gas effects summed, indicating their combined effects on Vo2max are attenuated, fitting the following regression: FVo2max = 4.24 FiO2 + 0.519 FHbCO - 8.22 (FiO2 × FHbCO) + 0.117, (R(2) = 0.965, P < 0.001). The FVo2max correlated highly with total cardiopulmonary O2 delivery, not peripheral diffusing capacity, and with arterial O2 concentration (CaO2), not cardiac output. Hypoxia and elevated FHbCO decreased CaO2 by different mechanisms: hypoxia decreased arterial O2 saturation (SaO2), whereas elevated FHbCO decreased O2 capacitance {concentration of hemoglobin (Hb) available to bind O2 ([Hbavail])}. When breathing hypoxic gas (FiO2 0.12), CaO2 did not change with increasing FHbCO up to 0.30 because higher SaO2 of Hbavail offset decreased [Hbavail] due to the following: 1) hyperventilation with hypoxia and/or elevated FHbCO; 2) increased Hb affinity for O2 due to both Bohr and direct carboxyhemoglobin effects; and 3) the sigmoid relationship between O2 saturation and partial pressure elevating SaO2 more with hypoxia than normoxia.

Quasiparticle Interference on Cubic Perovskite Oxide Surfaces.

PubMed

Okada, Yoshinori; Shiau, Shiue-Yuan; Chang, Tay-Rong; Chang, Guoqing; Kobayashi, Masaki; Shimizu, Ryota; Jeng, Horng-Tay; Shiraki, Susumu; Kumigashira, Hiroshi; Bansil, Arun; Lin, Hsin; Hitosugi, Taro

2017-08-25

We report the observation of coherent surface states on cubic perovskite oxide SrVO_{3}(001) thin films through spectroscopic-imaging scanning tunneling microscopy. A direct link between the observed quasiparticle interference patterns and the formation of a d_{xy}-derived surface state is supported by first-principles calculations. We show that the apical oxygens on the topmost VO_{2} plane play a critical role in controlling the coherent surface state via modulating orbital state.

Room-temperature subnanosecond waveguide lasers in Nd:YVO4 Q-switched by phase-change VO2: A comparison with 2D materials

PubMed Central

Nie, Weijie; Li, Rang; Cheng, Chen; Chen, Yanxue; Lu, Qingming; Romero, Carolina; Vázquez de Aldana, Javier R.; Hao, Xiaotao; Chen, Feng

2017-01-01

We report on room-temperature subnanosecond waveguide laser operation at 1064 nm in a Nd:YVO4 crystal waveguide through Q-switching of phase-change nanomaterial vanadium dioxide (VO2). The unique feature of VO2 nanomaterial from the insulating to metallic phases offers low-saturation-intensity nonlinear absorptions of light for subnanosecond pulse generation. The low-loss waveguide is fabricated by using the femtosecond laser writing with depressed cladding geometry. Under optical pump at 808 nm, efficient pulsed laser has been achieved in the Nd:YVO4 waveguide, reaching minimum pulse duration of 690 ps and maximum output average power of 66.7 mW. To compare the Q-switched laser performances by VO2 saturable absorber with those based on two-dimensional materials, the 1064-nm laser pulses have been realized in the same waveguide platform with either graphene or transition metal dichalcogenide (in this work, WS2) coated mirror. The results on 2D material Q-switched waveguide lasers have shown that the shortest pulses are with 22-ns duration, whilst the maximum output average powers reach ~161.9 mW. This work shows the obvious difference on the lasing properties based on phase-change material and 2D materials, and suggests potential applications of VO2 as low-cost saturable absorber for subnanosecond laser generation. PMID:28383017

Comparison of the Cosmed K4b(2) portable metabolic system in measuring steady-state walking energy expenditure.

PubMed

Schrack, Jennifer A; Simonsick, Eleanor M; Ferrucci, Luigi

2010-02-18

Recent introduction of the Cosmed K4b(2) portable metabolic analyzer allows measurement of oxygen consumption outside of a laboratory setting in more typical clinical or household environments and thus may be used to obtain information on the metabolic costs of specific daily life activities. The purpose of this study was to assess the accuracy of the Cosmed K4b(2) portable metabolic analyzer against a traditional, stationary gas exchange system (the Medgraphics D-Series) during steady-state, submaximal walking exercise. Nineteen men and women (9 women, 10 men) with an average age of 39.8 years (+/-13.8) completed two 400 meter walk tests using the two systems at a constant, self-selected pace on a treadmill. Average oxygen consumption (VO2) and carbon dioxide production (VCO2) from each walk were compared. Intraclass Correlation Coefficient (ICC) and Pearson correlation coefficients between the two systems for weight indexed VO2 (ml/kg/min), total VO2 (ml/min), and VCO2 (ml/min) ranged from 0.93 to 0.97. Comparison of the average values obtained using the Cosmed K4b(2) and Medgraphics systems using paired t-tests indicate no significant difference for VO2 (ml/kg/min) overall (p = 0.25), or when stratified by sex (p = 0.21 women, p = 0.69 men). The mean difference between analyzers was - 0.296 ml/kg/min (+/-0.26). Results were not significantly different for VO(2) (ml/min) or VCO2) (ml/min) within the study population (p = 0.16 and p = 0.08, respectively), or when stratified by sex (VO(2): p = 0.51 women, p = 0.16 men; VCO2: p = .11 women, p = 0.53 men). The Cosmed K4b(2) portable metabolic analyzer provides measures of VO2 and VCO2 during steady-state, submaximal exercise similar to a traditional, stationary gas exchange system.

Acid-base balance in the developing marsupial: from ectotherm to endotherm.

PubMed

Andrewartha, Sarah J; Cummings, Kevin J; Frappell, Peter B

2014-05-01

Marsupial joeys are born ectothermic and develop endothermy within their mother's thermally stable pouch. We hypothesized that Tammar wallaby joeys would switch from α-stat to pH-stat regulation during the transition from ectothermy to endothermy. To address this, we compared ventilation (Ve), metabolic rate (Vo2), and variables relevant to blood gas and acid-base regulation and oxygen transport including the ventilatory requirements (Ve/Vo2 and Ve/Vco2), partial pressures of oxygen (PaO2), carbon dioxide (PaCO2), pHa, and oxygen content (CaO2) during progressive hypothermia in ecto- and endothermic Tammar wallabies. We also measured the same variables in the well-studied endotherm, the Sprague-Dawley rat. Hypothermia was induced in unrestrained, unanesthetized joeys and rats by progressively dropping the ambient temperature (Ta). Rats were additionally exposed to helox (80% helium, 20% oxygen) to facilitate heat loss. Respiratory, metabolic, and blood-gas variables were measured over a large body temperature (Tb) range (∼15-16°C in both species). Ectothermic joeys displayed limited thermogenic ability during cooling: after an initial plateau, Vo2 decreased with the progressive drop in Tb. The Tb of endothermic joeys and rats fell despite Vo2 nearly doubling with the initiation of cold stress. In all three groups the changes in Vo2 were met by changes in Ve, resulting in constant Ve/Vo2 and Ve/Vco2, blood gases, and pHa. Thus, although thermogenic capability was nearly absent in ectothermic joeys, blood acid-base regulation was similar to endothermic joeys and rats. This suggests that unlike some reptiles, unanesthetized mammals protect arterial blood pH with changing Tb, irrespective of their thermogenic ability and/or stage of development.

Unexpected metal-insulator transition in thick Ca1-xSrxVO3 film on SrTiO3 (100) single crystal

NASA Astrophysics Data System (ADS)

Takayanagi, Makoto; Tsuchiya, Takashi; Namiki, Wataru; Ueda, Shigenori; Minohara, Makoto; Horiba, Koji; Kumigashira, Hiroshi; Terabe, Kazuya; Higuchi, Tohru

2018-03-01

Epitaxial Ca1-xSrxVO3 (0 ≦ x ≦ 1) thin films were grown on (100)-oriented SrTiO3 substrates by using the pulsed laser deposition technique. In contrast to the previous report that metal-insulator transition (MIT) in Ca1-xSrxVO3 (CSVO) was achieved only for extremely thin films (several nm thick), MIT was observed at 39, 72, and 113 K for films with a thickness of 50 nm. The electronic structure was investigated by hard and soft X-ray photoemission spectroscopy (HX-PES and SX-PES). The difference between these PES results was significant due to the variation in an escape depth of photoelectrons of PES. While HX-PES showed that the V 2p3/2 spectra consisted of four peaks (V5+, V4+, V3+, and V2+/1+), SX-PES showed only three peaks (V5+, V4+, and V3+). This difference can be caused by a strain from the substrate, which leads to the chemical disorder (V5+, V4+, V3+, and V2+/1+). The thin film near the substrate is affected by the strain. The positive magnetoresistance is attributed to the effect of electron-electron interactions in the disorder system. Therefore, the emergence of MIT can be explained by the electron-electron interactions from the chemical disorder due to the strain.

Wafer-scale growth of VO2 thin films using a combinatorial approach

PubMed Central

Zhang, Hai-Tian; Zhang, Lei; Mukherjee, Debangshu; Zheng, Yuan-Xia; Haislmaier, Ryan C.; Alem, Nasim; Engel-Herbert, Roman

2015-01-01

Transition metal oxides offer functional properties beyond conventional semiconductors. Bridging the gap between the fundamental research frontier in oxide electronics and their realization in commercial devices demands a wafer-scale growth approach for high-quality transition metal oxide thin films. Such a method requires excellent control over the transition metal valence state to avoid performance deterioration, which has been proved challenging. Here we present a scalable growth approach that enables a precise valence state control. By creating an oxygen activity gradient across the wafer, a continuous valence state library is established to directly identify the optimal growth condition. Single-crystalline VO2 thin films have been grown on wafer scale, exhibiting more than four orders of magnitude change in resistivity across the metal-to-insulator transition. It is demonstrated that ‘electronic grade' transition metal oxide films can be realized on a large scale using a combinatorial growth approach, which can be extended to other multivalent oxide systems. PMID:26450653

Ultrafast Dynamics in Vanadium Dioxide: Separating Spatially Segregated Mixed Phase Dynamics in the Time-domain

NASA Astrophysics Data System (ADS)

Hilton, David

2011-10-01

In correlated electronic systems, observed electronic and structural behavior results from the complex interplay between multiple, sometimes competing degrees-of- freedom. One such material used to study insulator-to-metal transitions is vanadium dioxide, which undergoes a phase transition from a monoclinic-insulating phase to a rutile-metallic phase when the sample is heated to 340 K. The major open question with this material is the relative influence of this structural phase transition (Peirels transition) and the effects of electronic correlations (Mott transition) on the observed insulator-to-metal transition. Answers to these major questions are complicated by vanadium dioxide's sensitivity to perturbations in the chemical structure in VO2. For example, related VxOy oxides with nearly a 2:1 ratio do not demonstrate the insulator-to- metal transition, while recent work has demonstrated that W:VO2 has demonstrated a tunable transition temperature controllable with tungsten doping. All of these preexisting results suggest that the observed electronic properties are exquisitely sensitive to the sample disorder. Using ultrafast spectroscopic techniques, it is now possible to impulsively excite this transition and investigate the photoinduced counterpart to this thermal phase transition in a strongly nonequilibrium regime. I will discuss our recent results studying the terahertz-frequency conductivity dynamics of this photoinduced phase transition in the poorly understood near threshold temperature range. We find a dramatic softening of the transition near the critical temperature, which results primarily from the mixed phase coexistence near the transition temperature. To directly study this mixed phase behavior, we directly study the nucleation and growth rates of the metallic phase in the parent insulator using non-degenerate optical pump-probe spectroscopy. These experiments measure, in the time- domain, the coexistent phase separation in VO2 (spatially separated insulator and metal islands) and, more importantly, their dynamic evolution in response to optical excitation.

Broadband extreme ultraviolet probing of transient gratings in vanadium dioxide

DOE PAGES

Sistrunk, Emily; Grilj, Jakob; Jeong, Jaewoo; ...

2015-02-11

Nonlinear spectroscopy in the extreme ultraviolet (EUV) and soft x-ray spectral range offers the opportunity for element selective probing of ultrafast dynamics using core-valence transitions (Mukamel et al., Acc. Chem. Res. 42, 553 (2009)). The study demonstrate a step on this path showing core-valence sensitivity in transient grating spectroscopy with EUV probing. We study the optically induced insulator-to-metal transition (IMT) of a VO 2 film with EUV diffraction from the optically excited sample. The VO 2 exhibits a change in the 3p-3d resonance of V accompanied by an acoustic response. Due to the broadband probing we are able to separatemore » the two features.« less

Local coexistence of VO 2 phases revealed by deep data analysis

DOE PAGES

Strelcov, Evgheni; Ievlev, Anton; Tselev, Alexander; ...

2016-07-07

We report a synergistic approach of micro-Raman spectroscopic mapping and deep data analysis to study the distribution of crystallographic phases and ferroelastic domains in a defected Al-doped VO 2 microcrystal. Bayesian linear unmixing revealed an uneven distribution of the T phase, which is stabilized by the surface defects and uneven local doping that went undetectable by other classical analysis techniques such as PCA and SIMPLISMA. This work demonstrates the impact of information recovery via statistical analysis and full mapping in spectroscopic studies of vanadium dioxide systems, which is commonly substituted by averaging or single point-probing approaches, both of which suffermore » from information misinterpretation due to low resolving power.« less

Ultrafast diffraction conoscopy of the structural phase transition in VO2: Evidence of two lattice distortions

NASA Astrophysics Data System (ADS)

Kumar, Nardeep; Rúa, Armando; Fernández, Félix E.; Lysenko, Sergiy

2017-06-01

Photoinduced phase transitions in complex correlated systems occur very rapidly and involve the interplay between various electronic and lattice degrees of freedom. For these materials to be considered for practical applications, it is important to discover how their phase transitions take place. Here we use a novel ultrafast diffraction conoscopy technique to study the evolution of vanadium dioxide (VO2) from biaxial to uniaxial symmetry. A key finding in this study is an additional relaxation process through which the phase transition takes place. Our results show that the biaxial monoclinic crystal initially, within the first 100-300 fs, transforms to a transient biaxial crystal, and within the next 300-400 fs converts into a uniaxial rutile crystal. The characteristic times for these transitions depend on film morphology and are presumably altered by misfit strain. We take advantage of Landau phenomenology to describe the complex dynamics of VO2 phase transition in the femtosecond regime.

Properties of the correlated metal phase induced by electrolyte gating of insulating vanadium dioxide nanobeams

NASA Astrophysics Data System (ADS)

Singh, Sujay; Horrocks, Gregory; Marley, Peter; Banerjee, Sarbajit; Sambandamurthy, G.

2014-03-01

Vanadium oxide (VO2) undergoes a first order metal to insulator transition (MIT) and a structural phase transition (monoclinic insulator to rutile metal) near 340 K. Over the past few years, several attempts are made to trigger the MIT in VO2 using ionic liquids (IL). Parkin's group has recently showed that IL gating leads to the creation of oxygen vacancies in VO2 and stabilizes the metallic phase. Our goal is to study the electronic properties, changes in the stoichiometry and structure of this metallic phase created by oxygen vacancies. Electrical transport measurements on single crystal nanobeams show that the metallic phase has a higher resistance while IL gating is applied and results from Raman spectroscopy studies on any structural change during IL gating will be presented. The role of substitutional dopants (such as W, Mo) on the creation of oxygen vacancies and subsequent stabilization of metallic phase in IL gated experiments will also be discussed. The work is supported by NSF DMR 0847324 and 0847169.

Nanoscale Engineering in VO2 Nanowires via Direct Electron Writing Process.

PubMed

Zhang, Zhenhua; Guo, Hua; Ding, Wenqiang; Zhang, Bin; Lu, Yue; Ke, Xiaoxing; Liu, Weiwei; Chen, Furong; Sui, Manling

2017-02-08

Controlling phase transition in functional materials at nanoscale is not only of broad scientific interest but also important for practical applications in the fields of renewable energy, information storage, transducer, sensor, and so forth. As a model functional material, vanadium dioxide (VO 2 ) has its metal-insulator transition (MIT) usually at a sharp temperature around 68 °C. Here, we report a focused electron beam can directly lower down the transition temperature of a nanoarea to room temperature without prepatterning the VO 2 . This novel process is called radiolysis-assisted MIT (R-MIT). The electron beam irradiation fabricates a unique gradual MIT zone to several times of the beam size in which the temperature-dependent phase transition is achieved in an extended temperature range. The gradual transformation zone offers to precisely control the ratio of metal/insulator phases. This direct electron writing technique can open up an opportunity to precisely engineer nanodomains of diversified electronic properties in functional material-based devices.

Energy expenditure during rest and treadmill gait training in quadriplegic subjects.

PubMed

de Carvalho, D C L; Cliquet, A

2005-11-01

The analysis of oxygen uptake (VO(2)) and energy consumption in quadriplegics after 6 months of treadmill gait with neuromuscular electrical stimulation (NMES). To compare metabolic responses in quadriplegics after 6 months of treadmill training, with NMES (30-50% body weight relief), with quadriplegics who did not perform gait. Ambulatory of University Hospital, Brazil. Quadriplegics were separated into gait and control groups (CGs). On inclusion, all subjects performed VO(2) test. In the gait group (GG) (n=11), the protocol consisted of 8 min of rest, 10 min of treadmill walking using NMES and 10 min of recovery. In the CG (n=10), testing consisted of 8 min rest, 15 min of quadriceps endurance exercise in sitting position with NMES and 10 min recovery. VO(2), carbon dioxide production (VCO(2)) and energy consumption were measured. The GG performed 6 months of treadmill training, using NMES, for 20 min, twice a week. The CG did not practice any activity with NMES, performing conventional physiotherapy only; the CG was stimulated only during the cardiorespiratory test. All parameters increased significantly for the GG: 36% for VO(2) (l/min), 43% for VCO(2) (l/min) and 32.5% for energy consumption (J/kg/s). For the CG, during knee extension exercise, VO(2) increased without changes in the energy consumption (P<0.05); smaller values were obtained for all parameters when compared to those obtained during gait. Quadriplegic gait was efficient towards increasing VO(2) and energy consumption, which can decrease the risk of cardiovascular diseases. Spinal Cord (2005) 43, 658-663. doi:10.1038/sj.sc.3101776; published online 21 June 2005.

Phase diagram of the ultrafast photoinduced insulator-metal transition in vanadium dioxide

NASA Astrophysics Data System (ADS)

Cocker, T. L.; Titova, L. V.; Fourmaux, S.; Holloway, G.; Bandulet, H.-C.; Brassard, D.; Kieffer, J.-C.; El Khakani, M. A.; Hegmann, F. A.

2012-04-01

We use time-resolved terahertz spectroscopy to probe the ultrafast dynamics of the insulator-metal phase transition induced by femtosecond laser pulses in a nanogranular vanadium dioxide (VO2) film. Based on the observed thresholds for characteristic transient terahertz dynamics, a phase diagram of critical pump fluence versus temperature for the insulator-metal phase transition in VO2 is established for the first time over a broad range of temperatures down to 17 K. We find that both Mott and Peierls mechanisms are present in the insulating state and that the photoinduced transition is nonthermal. We propose a critical-threshold model for the ultrafast photoinduced transition based on a critical density of electrons and a critical density of coherently excited phonons necessary for the structural transition to the metallic state. As a result, evidence is found at low temperatures for an intermediate metallic state wherein the Mott state is melted but the Peierls distortion remains intact, consistent with recent theoretical predictions. Finally, the observed terahertz conductivity dynamics above the photoinduced transition threshold reveal nucleation and growth of metallic nanodomains over picosecond time scales.

Relative Influence of Intrinsic and Extrinsic Factors on the Metal-Insulator Transition of VO2 Nanowires

NASA Astrophysics Data System (ADS)

Kim, In Soo

The influence of stoichiometry on the metal-insulator transition of vanadium dioxide (VO2) nanowires was investigated using Raman spectroscopy. Controlled reduction of nominally strain-free suspended VO2 nanowires was conducted by rapid thermal annealing (RTA). The deficiency in oxygen assisted in the unprecedented suppression of the metallic (R) phase to temperatures as low as 103 K through generation of free electrons. In a complementary manner, oxygen-rich conditions stabilized the metastable monoclinic (M2) and triclinic (T) phases. A pseudo-phase diagram with dimensions of temperature and stoichiometry was established, highlighting the accessibility of new phases in the nanowire geometry. Detection of the dynamic elastic response across the metal-insulator transition in suspended VO2 nanowires was enabled by fiber-coupled polarization dependent interferometry. Dual-beam Raman spectroscopy was developed to determine the local domain/phase structure of VO2 nanowires, which allowed for accurate modeling using COMSOL finite element analysis (FEA). The Young's moduli of the single crystal insulating (M1) and metallic (R) phases without artifacts were determined for the first time. The sources of dissipation were identified as clamping losses, structural losses, thermoelastic damping, and domain wall motion. While contribution of thermoelastic damping was found to be dominant in the terminal phases, extraordinary dissipation was observed upon formation and movement of domain walls. Finally, it was shown that creation of local defects could lead to new classes of tunable sensors with a discrete and programmable frequency response with temperature.

Explanation of the variance in quality of life and activity capacity of patients with heart failure by laboratory data.

PubMed

Athanasopoulos, Leonidas V; Dritsas, Athanasios; Doll, Helen A; Cokkinos, Dennis V

2010-08-01

This study was conducted to explain the variance in quality of life (QoL) and activity capacity of patients with congestive heart failure from pathophysiological changes as estimated by laboratory data. Peak oxygen consumption (peak VO2) and ventilation (VE)/carbon dioxide output (VCO2) slope derived from cardiopulmonary exercise testing, plasma N-terminal prohormone of B-type natriuretic peptide (NT-proBNP), and echocardiographic markers [left atrium (LA), left ventricular ejection fraction (LVEF)] were measured in 62 patients with congestive heart failure, who also completed the Minnesota Living with Heart Failure Questionnaire and the Specific Activity Questionnaire. All regression models were adjusted for age and sex. On linear regression analysis, peak VO2 with P value less than 0.001, VE/VCO2 slope with P value less than 0.01, LVEF with P value less than 0.001, LA with P=0.001, and logNT-proBNP with P value less than 0.01 were found to be associated with QoL. On stepwise multiple linear regression, peak VO2 and LVEF continued to be predictive, accounting for 40% of the variability in Minnesota Living with Heart Failure Questionnaire score. On linear regression analysis, peak VO2 with P value less than 0.001, VE/VCO2 slope with P value less than 0.001, LVEF with P value less than 0.05, LA with P value less than 0.001, and logNT-proBNP with P value less than 0.001 were found to be associated with activity capacity. On stepwise multiple linear regression, peak VO2 and LA continued to be predictive, accounting for 53% of the variability in Specific Activity Questionnaire score. Peak VO2 is independently associated both with QoL and activity capacity. In addition to peak VO2, LVEF is independently associated with QoL, and LA with activity capacity.

Extrinsic and intrinsic properties in metal–insulator transition of hydrothermally prepared vanadium dioxide crystals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, Myeongsoon; Kim, Don, E-mail: donkim@pknu.ac.kr

2014-03-01

The clear insulator (monoclinic-VO{sub 2}) to metal (rutile-VO{sub 2}) transition (IMT) was observed in electrical conductivity and differential scanning calorimeter (DSC) measurements at around 340 K, which is IMT temperature (T{sub H}), in the hydrothermally prepared VO{sub 2} crystals. The occurrence of metal to insulator transition (MIT) temperature (T{sub C}) was observed below 333 K during the first resistance measurement cycle in the most of cases. The sudden jump of the electrical resistance at IMT and MIT points was amplified several times than that of the first cycle during the repeated successive thermal cycles (heating and cooling across the IMTmore » and MIT temperatures). T{sub C} and T{sub H} shifted to higher temperature by the repeated successive thermal cycles. This shift and the amplified jump might be related to the mechanical stress between the VO{sub 2} crystals, i.e. extrinsic properties. However, the starting point of MIT, T{sub CS} = ∼ 336 K, and the starting point of IMT, T{sub HS} = ∼ 338 K, kept almost constant during the repeated thermal cycles (< 10 times). These two temperatures may be related to the intrinsic properties of the VO{sub 2}: the phase transitions initiated at these temperatures regardless of the number of the repeated thermal cycles. The neat surface of the VO{sub 2} crystals was severely damaged and the average size of particles reduced from 110 nm to 70–90 nm after extensively repeated thermal cycles (> 70 times). The damaged surface and the smaller particles, which would be originated from the mechanical stress caused by crystal volume change during the first order transition of the VO{sub 2}, would weaken the electrical conduction path (loosen grain boundaries) between the VO{sub 2} single crystals and would result in the amplified jump at the following MIT. This report may boost the study for the improved stability and lifetime of the VO{sub 2} based electronic devices. - Highlights: • The sharp phase transition in cluster of VO{sub 2} crystals depends on repeated thermal cycles. • Two intrinsic and two extrinsic temperatures are observed during the phase transition. • The mechanical stress change and surface damage may cause the extrinsic properties in transport measurement.« less

Variation of optical properties of gel-derived VO2 thin films with temperature

NASA Astrophysics Data System (ADS)

Hou, Lisong; Lu, Song W.; Gan, Fuxi

1991-11-01

VO2 thin films are prepared on three kinds of substrates by the sol-gel dip-coating method followed by heat treatment under vacuum conditions. The IR and UV-visible spectra of the films are studied during heating and cooling between room temperature and 100 degree(s)C. The experimental results show that the films exhibit thermally-induced reversible phase transition and, as a result, the maximum changes in transmittance and reflectivity are 58% and 25%, respectively, in the case of vacuum heat treatment at 400 degree(s)C and silica glass substrates. The refractive index n decreases and the extinction coefficient k increases when heating these films from room temperature to 100 degree(s)C, and vice versa. The reasons why the optical constants and IR absorption spectra change so remarkably are discussed.

Semiconductor-insulator transition in VO{sub 2} (B) thin films grown by pulsed laser deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rúa, Armando; Díaz, Ramón D.; Lysenko, Sergiy

2015-09-28

Thin films of B-phase VO{sub 2} were grown by pulsed-laser deposition on glass and (100)-cut MgO substrates in a temperature range from 375 to 425 °C and at higher gas pressures than usual for this technique. The films were strongly oriented, with ab-planes parallel to the substrate surface. Detailed study of surface morphology through Atomic Force Microscopy images suggest significant differences in evolution as a function of growth temperature for films on the two types of substrates. Measurements of electrical conductivities through cooling-heating cycles from room temperature to 120 K showed changes of five orders of magnitude, with steeper changes between roommore » temperature and ∼150 K, which corresponds with the extended and reversible phase transition known to occur for this material. At lower temperatures conductivities exhibited Arrhenius behavior, indicating that no further structural change was occurring and that conduction is thermally activated. In this lower temperature range, conductivity of the samples can be described by the near-neighbor hopping model. No hysteresis was found between the cooling and heating braches of the cycles, which is at variance with previous results published for VO{sub 2} (B). This apparent lack of hysteresis for thin films grown in the manner described and the large conductivity variation as a function of temperature observed for the samples suggests this material could be of interest for infrared sensing applications.« less

Atomic Origins of Monoclinic-Tetragonal (Rutile) Phase Transition in Doped VO2 Nanowires.

PubMed

Asayesh-Ardakani, Hasti; Nie, Anmin; Marley, Peter M; Zhu, Yihan; Phillips, Patrick J; Singh, Sujay; Mashayek, Farzad; Sambandamurthy, Ganapathy; Low, Ke-Bin; Klie, Robert F; Banerjee, Sarbajit; Odegard, Gregory M; Shahbazian-Yassar, Reza

2015-11-11

There has been long-standing interest in tuning the metal-insulator phase transition in vanadium dioxide (VO2) via the addition of chemical dopants. However, the underlying mechanisms by which doping elements regulate the phase transition in VO2 are poorly understood. Taking advantage of aberration-corrected scanning transmission electron microscopy, we reveal the atomistic origins by which tungsten (W) dopants influence the phase transition in single crystalline WxV1-xO2 nanowires. Our atomically resolved strain maps clearly show the localized strain normal to the (122̅) lattice planes of the low W-doped monoclinic structure (insulator). These strain maps demonstrate how anisotropic localized stress created by dopants in the monoclinic structure accelerates the phase transition and lead to relaxation of structure in tetragonal form. In contrast, the strain distribution in the high W-doped VO2 structure is relatively uniform as a result of transition to tetragonal (metallic) phase. The directional strain gradients are furthermore corroborated by density functional theory calculations that show the energetic consequences of distortions to the local structure. These findings pave the roadmap for lattice-stress engineering of the MIT behavior in strongly correlated materials for specific applications such as ultrafast electronic switches and electro-optical sensors.

Metal-semiconductor phase transition of order arrays of VO2 nanocrystals

NASA Astrophysics Data System (ADS)

Lopez, Rene; Suh, Jae; Feldman, Leonard; Haglund, Richard

2004-03-01

The study of solid-state phase transitions at nanometer length scales provides new insights into the effects of material size on the mechanisms of structural transformations. Such research also opens the door to new applications, either because materials properties are modified as a function of particle size, or because the nanoparticles interact with a surrounding matrix material, or with each other. In this paper, we describe the formation of vanadium dioxide nanoparticles in silicon substrates by pulsed laser deposition of ion beam lithographically selected sites and thermal processing. We observe the collective behavior of 50 nm diameter VO2 oblate nanoparticles, 10 nm high, and ordered in square arrays with arbitrary lattice constant. The metal-semiconductor-transition of the VO2 precipitates shows different features in each lattice spacing substrate. The materials are characterized by electron microscopy, x-ray diffraction, Rutherford backscattering. The features of the phase transition are studied via infrared optical spectroscopy. Of particular interest are the enhanced scattering and the surface plasmon resonance when the particles reach the metallic state. This resonance amplifies the optical contrast in the range of near-infrared optical communication wavelengths and it is altered by the particle-particle coupling as in the case of noble metals. In addition the VO2 nanoparticles exhibit sharp transitions with up to 50 K of hysteresis, one of the largest values ever reported for this transition. The optical properties of the VO2 nanoarrays are correlated with the size of the precipitates and their inter-particle distance. Nonlinear and ultra fast optical measurements have shown that the transition is the fastest known solid-solid transformation. The VO2 nanoparticles show the same bulk property, transforming in times shorter than 150 fs. This makes them remarkable candidates for ultrafast optical and electronic switching applications.

Multipass pumped Nd-based thin-disk lasers: continuous-wave laser operation at 1.06 and 0.9 {mu}m with intracavity frequency doubling

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pavel, Nicolaie; Luenstedt, Kai; Petermann, Klaus

2007-12-01

The laser performances of the 1.06 {mu}m 4F3/2 --> 4I11/2 four-level transition and of the 0.9 {mu}m 4F3/2 --> I9/24 quasi-three-level transition were investigated using multipass pumped Nd-based media in thin-disk geometry. When pumping at 0.81 {mu}m into the 4F5/2 level, continuous-wave laser operation was obtained with powers in excess of 10 W at 1.06 {mu}m, in the multiwatt region at 0.91 {mu}m in Nd:YVO4 and Nd:GdVO4, and at 0.95 {mu}m in Nd:YAG. Intracavity frequency-doubled Nd:YVO4 thin-disk lasers with output powers of 6.4 W at 532 nm and of 1.6 W at 457 nm were realized at this pumping wavelength.more » The pumping at 0.88 {mu}m, which is directed into the 4F3/2 emitting level, was also employed, and Nd:YVO4 and Nd:GdVO4 thin-disk lasers with {approx}9 W output power at 1.06 {mu}m and visible laser radiation at 0.53 {mu}m with output power in excess of 4 W were realized. Frequency-doubled Nd:vanadate thin-disk lasers with deep blue emission at 0.46 {mu}m were obtained under pumping directly into the 4F3/2 emitting level.« less

A cost-effective process to prepare VO{sub 2} (M) powder and films with superior thermochromic properties

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xiao, Xiudi; Zhang, Hua; Chai, Guanqi

2014-03-01

Graphical abstract: Combining codeposition and short time post annealing, VO{sub 2} (M) with high quality and excellent phase transition performance is obtained. After mixing the VO{sub 2} powder with acrylic resin, the composite films deposited on glass show superior visible transmission and solar modulation, which can be used as an excellent candidate of low cost smart window in energy saving field. - Highlights: • The VO{sub 2} powder obtained by short time thermolysis method is high purity and crystallinity with superior phase transition performance. • The maximum decreasing efficiency of phase transition temperature is about −30 K/at% with w =more » 0.4 at%. • After mixing VO{sub 2} powder with acrylic resin, the maximal visible transmission of the composite films is 48% and the transmission modulation at 2000 nm is 37.3% with phase transition temperature of 66.2 °C. • Though the phase transition performance is weakened by tungsten doping, the film prepared by 1.3 at% tungsten doped VO{sub 2} still show superior transmission modulation about 26.4%, which means that it is a potential candidate as smart windows. - Abstract: VO{sub 2} powder with superior phase transition performance was prepared by convenient thermolysis method. The results illustrated that VO{sub 2} powder show high purity and crystallinity. VO{sub 2} particles are transformed from cluster to quasi-sphere with the increase of annealing temperature. The DSC analysis proves that VO{sub 2} show superior phase transition performance around 68 °C. The phase transition temperature can be reduced to 33.5 °C by 1.8 at% tungsten doping. The maximum decreasing efficiency of phase transition temperature is about −30 K/at% with w = 0.4 at%. After mixing VO{sub 2} powder with acrylic resin, the maximal visible transmission of the composite thin films on glass is 48% and the transmission modulation at 2000 nm is 37.3% with phase transition temperature of 66.2 °C. Though the phase transition performance is weakened by tungsten doping, the film prepared by 1.3 at% tungsten doped VO{sub 2} still show superior transmission modulation about 26.4% at 2000 nm, which means that it is a potential candidate as smart windows.« less

Correlation-driven insulator-metal transition in near-ideal vanadium dioxide films

DOE PAGES

Gray, A. X.; Jeong, J.; Aetukuri, N. P.; ...

2016-03-18

We use polarization- and temperature-dependent x-ray absorption spectroscopy, in combination with photoelectron microscopy, x-ray diffraction, and electronic transport measurements, to study the driving force behind the insulator-metal transition in VO 2. We show that both the collapse of the insulating gap and the concomitant change in crystal symmetry in homogeneously strained single-crystalline VO 2 films are preceded by the purely electronic softening of Coulomb correlations within V-V singlet dimers. Furthermore, this process starts 7 K (±0.3 K) below the transition temperature, as conventionally defined by electronic transport and x-ray diffraction measurements, and sets the energy scale for driving the near-room-temperaturemore » insulator-metal transition in this technologically promising material.« less

Adhesion characteristics of VO2 ink film sintered by intense pulsed light for smart window

NASA Astrophysics Data System (ADS)

Youn, Ji Won; Lee, Seok-Jae; Kim, Kwang-Seok; Kim, Dae Up

2018-05-01

Progress in the development of energy-efficient coatings on glass has led to the research of smart windows that can modulate solar energy in response to an external stimulus like light, heat, or electricity. Thermochromic smart windows have attracted great interest because they provide highly visible transparency and intelligently controllable solar heat. VO2 has been widely used as coating material for thermochromism owing to its reversible metal-to-insulator transition near room temperature. However, unstable crystalline phases and expensive fabrication processes of VO2 films limit their facile application in smart windows. To overcome these restrictions, we manufactured nanoinks based on VO2 nanoparticles and fabricated films using spin coating and intense pulsed light (IPL) sintering on a quartz substrate. We examined adhesion between the VO2 nanoink films and the quartz substrate by varying the applied voltages and the number of pulses. The average adhesion of thin films increased to 83 and 108 N/m as the applied voltage during IPL sintering increased from 1400 to 2000 V. By increasing the number of pulses from 5 to 20, the adhesive strength increased from 83 to 94 N/m at 1400 V, and decreased from 108 to 96 N/m at 2000 V voltage.

A pocket-sized metabolic analyzer for assessment of resting energy expenditure.

PubMed

Zhao, Di; Xian, Xiaojun; Terrera, Mirna; Krishnan, Ranganath; Miller, Dylan; Bridgeman, Devon; Tao, Kevin; Zhang, Lihua; Tsow, Francis; Forzani, Erica S; Tao, Nongjian

2014-04-01

The assessment of metabolic parameters related to energy expenditure has a proven value for weight management; however these measurements remain too difficult and costly for monitoring individuals at home. The objective of this study is to evaluate the accuracy of a new pocket-sized metabolic analyzer device for assessing energy expenditure at rest (REE) and during sedentary activities (EE). The new device performs indirect calorimetry by measuring an individual's oxygen consumption (VO2) and carbon dioxide production (VCO2) rates, which allows the determination of resting- and sedentary activity-related energy expenditure. VO2 and VCO2 values of 17 volunteer adult subjects were measured during resting and sedentary activities in order to compare the metabolic analyzer with the Douglas bag method. The Douglas bag method is considered the Gold Standard method for indirect calorimetry. Metabolic parameters of VO2, VCO2, and energy expenditure were compared using linear regression analysis, paired t-tests, and Bland-Altman plots. Linear regression analysis of measured VO2 and VCO2 values, as well as calculated energy expenditure assessed with the new analyzer and Douglas bag method, had the following linear regression parameters (linear regression slope LRS0, and R-squared coefficient, r(2)) with p = 0: LRS0 (SD) = 1.00 (0.01), r(2) = 0.9933 for VO2; LRS0 (SD) = 1.00 (0.01), r(2) = 0.9929 for VCO2; and LRS0 (SD) = 1.00 (0.01), r(2) = 0.9942 for energy expenditure. In addition, results from paired t-tests did not show statistical significant difference between the methods with a significance level of α = 0.05 for VO2, VCO2, REE, and EE. Furthermore, the Bland-Altman plot for REE showed good agreement between methods with 100% of the results within ±2SD, which was equivalent to ≤10% error. The findings demonstrate that the new pocket-sized metabolic analyzer device is accurate for determining VO2, VCO2, and energy expenditure. Copyright © 2013 Elsevier Ltd and European Society for Clinical Nutrition and Metabolism. All rights reserved.

Electron-beam-evaporated thin films of hafnium dioxide for fabricating electronic devices

DOE PAGES

Xiao, Zhigang; Kisslinger, Kim

2015-06-17

Thin films of hafnium dioxide (HfO 2) are widely used as the gate oxide in fabricating integrated circuits because of their high dielectric constants. In this paper, the authors report the growth of thin films of HfO 2 using e-beam evaporation, and the fabrication of complementary metal-oxide semiconductor (CMOS) integrated circuits using this HfO 2 thin film as the gate oxide. The authors analyzed the thin films using high-resolution transmission electron microscopy and electron diffraction, thereby demonstrating that the e-beam-evaporation-grown HfO 2 film has a polycrystalline structure and forms an excellent interface with silicon. Accordingly, we fabricated 31-stage CMOS ringmore » oscillator to test the quality of the HfO 2 thin film as the gate oxide, and obtained excellent rail-to-rail oscillation waveforms from it, denoting that the HfO 2 thin film functioned very well as the gate oxide.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Eaton, Craig; Brahlek, Matthew; Engel-Herbert, Roman, E-mail: rue2@psu.edu

The authors report the growth of stoichiometric SrVO{sub 3} thin films on (LaAlO{sub 3}){sub 0.3}(Sr{sub 2}AlTaO{sub 6}){sub 0.7} (001) substrates using hybrid molecular beam epitaxy. This growth approach employs a conventional effusion cell to supply elemental A-site Sr and the metalorganic precursor vanadium oxytriisopropoxide (VTIP) to supply vanadium. Oxygen is supplied in its molecular form through a gas inlet. An optimal VTIP:Sr flux ratio has been identified using reflection high-energy electron-diffraction, x-ray diffraction, atomic force microscopy, and scanning transmission electron microscopy, demonstrating stoichiometric SrVO{sub 3} films with atomically flat surface morphology. Away from the optimal VTIP:Sr flux, characteristic changes inmore » the crystalline structure and surface morphology of the films were found, enabling identification of the type of nonstoichiometry. For optimal VTIP:Sr flux ratios, high quality SrVO{sub 3} thin films were obtained with smallest deviation of the lattice parameter from the ideal value and with atomically smooth surfaces, indicative of the good cation stoichiometry achieved by this growth technique.« less

Vanadium Oxide Thin Films Alloyed with Ti, Zr, Nb, and Mo for Uncooled Infrared Imaging Applications

NASA Astrophysics Data System (ADS)

Ozcelik, Adem; Cabarcos, Orlando; Allara, David L.; Horn, Mark W.

2013-05-01

Microbolometer-grade vanadium oxide (VO x ) thin films with 1.3 < x < 2.0 were prepared by pulsed direct-current (DC) sputtering using substrate bias in a controlled oxygen and argon environment. These films were systematically alloyed with Ti, Nb, Mo, and Zr using a second gun and radiofrequency (RF) reactive co-sputtering to probe the effects of the transition metals on the film charge transport characteristics. The results reveal that the temperature coefficient of resistance (TCR) and resistivity are unexpectedly similar for alloyed and unalloyed films up to alloy compositions in the ˜20 at.% range. Analysis of the film structures for the case of the 17% Nb-alloyed film by glancing-angle x-ray diffraction and transmission electron microscopy shows that the microstructure remains even with the addition of high concentrations of alloy metal, demonstrating the robust character of the VO x films to maintain favorable electrical transport properties for bolometer applications. Postdeposition thermal annealing of the alloyed VO x films further reveals improvement of electrical properties compared with unalloyed films, indicating a direction for further improvements in the materials.

Development enhances hypometabolism in northern elephant seal pups (Mirounga angustirostris)

PubMed Central

Tift, Michael S.; Ranalli, Elizabeth C.; Houser, Dorian S.; Ortiz, Rudy M.; Crocker, Daniel E.

2013-01-01

Summary Investigation into the development of oxygen storage capacity in air-breathing marine predators has been performed, but little is known about the development of regulatory factors that influence oxygen utilization. Strategies for efficiently using oxygen stores should enable marine predators to optimize time spent foraging underwater. We describe the developmental patterns of oxygen use during voluntary breath-holds in northern elephant seals (Mirounga angustirostris) at 2 and 7 weeks post-weaning. We measured 1) changes in oxygen consumption (VO2), and 2) changes in venous pH, partial pressure of oxygen (pO2), haemoglobin saturation (sO2), oxygen content (O2ct), partial pressure of carbon dioxide (pCO2), haematocrit (Hct) and total haemoglobin (tHb). To examine the effect of the dive response on the development of oxygen utilization, voluntary breath-hold experiments were conducted in and out of water. Suppression of VO2 during voluntary breath-holds increased significantly between 2 and 7 weeks post-weaning, reaching a maximum suppression of 53% below resting metabolic rate and 56% below Kleiber’s standard metabolic rate. From 2 to 7 weeks post-weaning, breath-hold VO2 was reduced by 52%. Between the two age classes, this equates to a mean breath-hold VO2 reduction of 16% from resting VO2. Breath-hold VO2 also declined with increasing breath-hold duration, but there was no direct effect of voluntary submergence on reducing VO2. Age did not influence rates of venous pO2 depletion during breath-holds. However, voluntary submergence did result in slower pO2 depletion rates when compared to voluntary terrestrial apnoeas. The differences in whole body VO2 during breath-holds (measured at recovery) and venous pO2 (reflective of tissue O2-use measured during breath-holds), likely reflects metabolic suppression in hypoxic, vasoconstricted tissues. Consistent pCO2 values at the end of all voluntary breath-holds (59.0 ± 0.7 mmHg) suggests the physiological cue for stimulating respiration in northern elephant seal pups is the accumulation of CO2. Oxygen storage capacity and metabolic suppression directly limit diving capabilities and may influence foraging success in low-weaning weight seals forced to depart to sea prior to achieving full developmental diving capacity. PMID:24187422

Studies of electronic and magnetic properties of LaVO3 thin film

NASA Astrophysics Data System (ADS)

Jana, Anupam; Karwal, Sharad; Choudhary, R. J.; Phase, D. M.

2018-04-01

We have investigated the electronic and magnetic properties of pulsed laser deposited Mott insulator LaVO3 (LVO) thin film. Structural characterization revels the single phase [00l] oriented LVO thin film. Enhancement of out of plane lattice parameter indicates the compressively strained LVO film. Electron spectroscopic studies demonstrate that vanadium is present in V3+ state. An energy dispersive X-ray spectroscopic study ensures the stoichiometric growth of the film. Very smooth surface is observed in scanning electron micrograph. Colour mapping for elemental distribution reflect the homogeneity of LVO film. The bifurcation between zero-field-cooled and Field-cooled curves clearly points towards the weak ferromagnetic phase presence in compressively strained LVO thin film. A finite value of coercivity at 300 K reflects the possibility of room temperature ferromagnetism of LVO thin film.

Improvements in Key Cardiopulmonary Exercise Testing Variables Following Cardiac Rehabilitation in Patients With Coronary Artery Disease.

PubMed

Popovic, Dejana; Kumar, Nikhil; Chaudhry, Sundeep; Bagai, Akshay; Arena, Ross; Kumar, Naresh

2018-05-11

Improvements in cardiorespiratory fitness (VO2peak) post-cardiac rehabilitation (post-CR) are used to gauge therapeutic efficacy. The aim of the present study was to assess the effect of supervised CR on other cardiopulmonary exercise testing (CPX) variables, specifically those that reflect ventilatory efficiency and VO2 changes in relation to changes in work rate (WR). Patients (n = 142; mean age 63 ± 9 y; 23% female) with coronary artery disease (CAD) participated in supervised CR for 3 to 6 mo completing 60 ± 17 sessions (range: 32-96 sessions), with intensity derived from the baseline CPX. CPX was completed at baseline and post-CR on a cycle ergometer. The minimum heart rate (HR) during cycling was set 5 to 10 beats/min above the HR at ventilatory anaerobic threshold (VAT) while the maximum HR remained below the ischemic threshold observed during CPX, and this intensity was maintained for 25 min. VO2peak, peak O2 pulse, the minute ventilation/carbon dioxide production (VE/VCO2) slope, the oxygen uptake efficiency slope (OUES), and the ΔVO2/ΔWR slope were determined at baseline and post-CR. Following CR, there were significant improvements (all P < .001) in VO2peak (17.7 ± 4.7 mL/kg/min vs 20.9 ± 5.4 mL/kg/min), peak O2 pulse (11.6 ± 3.2 mL/beat vs 13.4 ± 3.6 mL/beat), VE/VCO2 slope (28.4 ± 5.3 vs 27.5 ± 4.7), OUES (1.8 ± 0.5 vs 2.0 ± 0.6), and ΔVO2/ΔWR slope (9.1 ± 1.2 mL/min/W vs 9.6 ± 1.1 mL/min/W). Key markers of ventilatory efficiency and VO2 kinetics during CPX significantly improve following CR. Expanding the list of variables assessed via CPX may provide better resolution in validation of CR therapeutic efficacy in patients with CAD.

A steep-slope transistor based on abrupt electronic phase transition

NASA Astrophysics Data System (ADS)

Shukla, Nikhil; Thathachary, Arun V.; Agrawal, Ashish; Paik, Hanjong; Aziz, Ahmedullah; Schlom, Darrell G.; Gupta, Sumeet Kumar; Engel-Herbert, Roman; Datta, Suman

2015-08-01

Collective interactions in functional materials can enable novel macroscopic properties like insulator-to-metal transitions. While implementing such materials into field-effect-transistor technology can potentially augment current state-of-the-art devices by providing unique routes to overcome their conventional limits, attempts to harness the insulator-to-metal transition for high-performance transistors have experienced little success. Here, we demonstrate a pathway for harnessing the abrupt resistivity transformation across the insulator-to-metal transition in vanadium dioxide (VO2), to design a hybrid-phase-transition field-effect transistor that exhibits gate controlled steep (`sub-kT/q') and reversible switching at room temperature. The transistor design, wherein VO2 is implemented in series with the field-effect transistor's source rather than into the channel, exploits negative differential resistance induced across the VO2 to create an internal amplifier that facilitates enhanced performance over a conventional field-effect transistor. Our approach enables low-voltage complementary n-type and p-type transistor operation as demonstrated here, and is applicable to other insulator-to-metal transition materials, offering tantalizing possibilities for energy-efficient logic and memory applications.

A steep-slope transistor based on abrupt electronic phase transition.

PubMed

Shukla, Nikhil; Thathachary, Arun V; Agrawal, Ashish; Paik, Hanjong; Aziz, Ahmedullah; Schlom, Darrell G; Gupta, Sumeet Kumar; Engel-Herbert, Roman; Datta, Suman

2015-08-07

Collective interactions in functional materials can enable novel macroscopic properties like insulator-to-metal transitions. While implementing such materials into field-effect-transistor technology can potentially augment current state-of-the-art devices by providing unique routes to overcome their conventional limits, attempts to harness the insulator-to-metal transition for high-performance transistors have experienced little success. Here, we demonstrate a pathway for harnessing the abrupt resistivity transformation across the insulator-to-metal transition in vanadium dioxide (VO2), to design a hybrid-phase-transition field-effect transistor that exhibits gate controlled steep ('sub-kT/q') and reversible switching at room temperature. The transistor design, wherein VO2 is implemented in series with the field-effect transistor's source rather than into the channel, exploits negative differential resistance induced across the VO2 to create an internal amplifier that facilitates enhanced performance over a conventional field-effect transistor. Our approach enables low-voltage complementary n-type and p-type transistor operation as demonstrated here, and is applicable to other insulator-to-metal transition materials, offering tantalizing possibilities for energy-efficient logic and memory applications.

Double-use linear polarization convertor using hybrid metamaterial based on VO2 phase transition in the terahertz region

NASA Astrophysics Data System (ADS)

Zou, Huanling; Xiao, Zhongyin; Li, Wei; Li, Chuan

2018-04-01

A number of polarization convertors based on metamaterials(MMs) have been investigated recently, but no one has proposed a high-efficiency linear polarization transformer both in transmission and reflection modes. Here, a bilayered MM embedded with vanadium dioxide (VO2) composed of a pair of sloping gold patches, bottom hybrid layer and a dielectric spacer is proposed as a double-use linear polarization convertor. It has been demonstrated numerically that this device has advantages of switching between transmission polarization conversion and reflection polarization conversion based on the phase transition of the VO2 film in the terahertz (THz) regime and the polarization conversion ratios (PCR) in both cases are higher than 90% in wide bands. The simulated linear polarization transmission/reflection coefficients and the surface current distributions give insight into the mechanism of the linear polarization conversions. Moreover, the physical mechanism of polarization sensitivity of the designed structure is investigated by the distributions of electric field. The proposed double-use linear polarization convertor shows great prospects in polarization imaging, and polarized light communications.

The optical gap in VO2 insulating phases is dominated by Coulomb repulsion

NASA Astrophysics Data System (ADS)

Hendriks, Christopher; Walter, Eric; Krakauer, Henry; Huffman, Tyler; Qazilbash, Mumtaz

Under doping, tensile strain or heating, vanadium dioxide (VO2) transforms from an insulating monoclinic (M1) to a metallic rutile (R) phase, progressing through intermediate insulating triclinic (T) and magnetic (M2) phases. Broadband optical spectroscopy data have been obtained on the T and M2 phases in the same sample. While only half the V atoms are dimerized in M2 compared to M1 and T, the measured optical gap is essentially unaltered by the first-order structural phase transition between them. Moreover, the optical interband features in the T and M2 phases are remarkably similar to those previously observed in the well-studied M1 phase. This shows that the electronic structure is insensitive to the lattice structure. Our ab-initio HSE optical conductivity calculations on the insulating phases of VO2 are in excellent agreement with the experimental measurements. We will discuss the choice of α, the fraction of exact exchange. As the energy gap is insensitive to the different lattice structures of the three insulating phases, we rule out Peierls effects as the dominant contributor to the opening of the gap. Rather, the energy gap arises from intra-atomic Coulomb correlations. Supported by ONR.

Tin-dioxide nanocrystals as Er3+ luminescence sensitizers: Formation of glass-ceramic thin films and their characterization

NASA Astrophysics Data System (ADS)

Zur, Lidia; Tran, Lam Thi Ngoc; Meneghetti, Marcello; Tran, Van Thi Thanh; Lukowiak, Anna; Chiasera, Alessandro; Zonta, Daniele; Ferrari, Maurizio; Righini, Giancarlo C.

2017-01-01

Silica-tin dioxide thin films doped with Er3+ ions were fabricated and investigated. Different parameters such as heat-treatment temperatures, molar concentrations of SnO2 as well as Er3+ ions concentration were changed in order to obtain the best properties of presented thin films. Using several techniques, thin films were characterized and proved to be crack-free, water-free and smooth after a heat-treatment at 1200 °C. Aiming to application in optics, the transparency of thin films was also evidenced by transmission spectra. Based on the photoluminescence measurements, the mechanism of energy transfer from SnO2 nanocrystals to Er3+ ions was examined and discussed.

An improved scan laser with a VO2 programmable mirror

NASA Astrophysics Data System (ADS)

Chivian, J. S.; Scott, M. W.; Case, W. E.; Krasutsky, N. J.

1985-04-01

A 10.6-microns scan laser has been constructed and operated with an off-axis cathode ray tube, high reflectance multilayer thin-film structures, and a tapered plasma discharge tube. Equations are given for the switching time of a high-reflectance spot on the VO2 and for the relation of scan laser output power to cavity geometry, cavity losses, and the gain of the active CO2 medium. A scan capability of 2100 easily resolvable directions was demonstrated, and sequential and randomly addressed spot rates of 100,000/sec were achieved. The equations relating output power and cavity mode size were experimentally verified using a nonscanned beam.

[Six-minute-walk test and maximum exercise test in cycloergometer in chronic obstructive pulmonary disease. Are the physiological demands equivalent?].

PubMed

Díaz, Orlando; Morales, Arturo; Osses, Rodrigo; Klaassen, Julieta; Lisboa, Carmen; Saldías, Fernando

2010-06-01

The physiological load imposed by the six minute walk test (SMWT) in chronic obstructive pulmonary disease (COPD) patients come from small studies where the influence of disease severity has not been assessed. The aim of the present study was to compare the SMWT with an incremental cardiopulmonary exercise test (CPET) in patients classified by disease severity according to FEV(1) (cutoff 50% predicted). Eighty-one COPD patients (53 with FEV(1) > or =50%) performed both tests on two consecutive days. Oxygen consumption (VO(2)), carbon dioxide production (VCO(2)), minute ventilation (V(E)), heart rate (HR) and pulse oximetry (SpO(2)) were measured during SMWT and CPET using portable equipment. Dyspnea and leg fatigue were measured with the Borg scale. In both groups, walking speed was constant during the SMWT and VO(2) showed a plateau after the 3rd minute. When comparing SMWT (6th min) and peak CPET, patients with FEV(1) > or =50% showed a greater VO(2), but lower values of VCO(2),V(E), HR, dyspnea, leg fatigue, and SpO(2) during walking. In contrast, in those with FEV(1) <50% predicted values were similar. Distance walked during the SMWT strongly correlated with VO(2) at peak CPET (r=0.78; P=0.0001). The SMWT is a constant load exercise in COPD patients, regardless of disease severity. It imposes high metabolic, ventilatory and cardiovascular requirements, which were closer to those of CPET in severe COPD. These findings may explain the close correlation between distance walked and peak CPET VO(2). 2009 SEPAR. Published by Elsevier Espana. All rights reserved.

The effect of additional carbohydrate supplements for 7 days after prolonged interval exercise on exercise performance and energy metabolism during submaximal exercise in team-sports athletes

PubMed Central

Park, Hun-Young; Kim, Jisu; Park, Miyoung; Chung, Nana; Lim, Kiwon

2018-01-01

[Purpose] The purpose of our study was to determine the effectiveness of carbohydrate loading by additional carbohydrate supplements for 7 days after prolonged interval exercise on exercise performance and energy metabolism during submaximal exercise in team-sports athletes. [Methods] Twenty male team-sports athletes (14 soccer and 6 rugby players) volunteered to participate in the study and were equally divided into the experimental group (EXP, n=10) performing additional carbohydrate supplementation for 7 days after prolonged interval exercise until blood glucose level reaches 50 mg/dL or less and the control group (CON, n=10). Then, maximal oxygen consumption (VO2max) and minute ventilation (VE), oxygen consumption (VO2), carbon dioxide excretion (VCO2), respiratory exchange ratio (RER), blood glucose level, and blood lactate level were measured in all team-sports players during submaximal exercise corresponding to 70% VO2max before and after intervention. [Results] There was no significant interaction in all parameters, but team-sports players in the EXP presented more improved VO2max (CON vs EXP = vs 5.3% vs 6.3%), VE (CON vs EXP = vs 3.8% vs 6.6%), VO2 (CON vs EXP = vs 8.5% vs 9.9%), VCO2 (CON vs EXP = vs 2.8% vs 4.0%), blood glucose level (CON vs EXP = vs -12.9% vs -7.6%), and blood lactate level (CON vs EXP = -18.2% vs -25%) compared to those in the CON. [Conclusion] These findings showed that additional carbohydrate supplementation conducted in our study is not effective in exercise performance and energy metabolism during submaximal exercise. PMID:29673243

The effect of additional carbohydrate supplements for 7 days after prolonged interval exercise on exercise performance and energy metabolism during submaximal exercise in team-sports athletes.

PubMed

Park, Hun-Young; Kim, Jisu; Park, Miyoung; Chung, Nana; Lim, Kiwon

2018-03-30

The purpose of our study was to determine the effectiveness of carbohydrate loading by additional carbohydrate supplements for 7 days after prolonged interval exercise on exercise performance and energy metabolism during submaximal exercise in team-sports athletes. Twenty male team-sports athletes (14 soccer and 6 rugby players) volunteered to participate in the study and were equally divided into the experimental group (EXP, n=10) performing additional carbohydrate supplementation for 7 days after prolonged interval exercise until blood glucose level reaches 50 mg/dL or less and the control group (CON, n=10). Then, maximal oxygen consumption (VO2max) and minute ventilation (VE), oxygen consumption (VO2), carbon dioxide excretion (VCO2), respiratory exchange ratio (RER), blood glucose level, and blood lactate level were measured in all team-sports players during submaximal exercise corresponding to 70% VO2max before and after intervention. There was no significant interaction in all parameters, but team-sports players in the EXP presented more improved VO2max (CON vs EXP = vs 5.3% vs 6.3%), VE (CON vs EXP = vs 3.8% vs 6.6%), VO2 (CON vs EXP = vs 8.5% vs 9.9%), VCO2 (CON vs EXP = vs 2.8% vs 4.0%), blood glucose level (CON vs EXP = vs -12.9% vs -7.6%), and blood lactate level (CON vs EXP = -18.2% vs -25%) compared to those in the CON. These findings showed that additional carbohydrate supplementation conducted in our study is not effective in exercise performance and energy metabolism during submaximal exercise. ©2018 The Korean Society for Exercise Nutrition.

Metal-insulator and charge ordering transitions in oxide nanostructures

NASA Astrophysics Data System (ADS)

Singh, Sujay Kumar

Strongly correlated oxides are a class of materials wherein interplay of various degrees of freedom results in novel electronic and magnetic phenomena. Vanadium oxides are widely studied correlated materials that exhibit metal-insulator transitions (MIT) in a wide temperature range from 70 K to 380 K. In this Thesis, results from electrical transport measurements on vanadium dioxide (VO2) and vanadium oxide bronze (MxV 2O5) (where M: alkali, alkaline earth, and transition metal cations) are presented and discussed. Although the MIT in VO2 has been studied for more than 50 years, the microscopic origin of the transition is still debated since a slew of external parameters such as light, voltage, and strain are found to significantly alter the transition. Furthermore, recent works on electrically driven switching in VO2 have shown that the role of Joule heating to be a major cause as opposed to electric field. We explore the mechanisms behind the electrically driven switching in single crystalline nanobeams of VO2 through DC and AC transport measurements. The harmonic analysis of the AC measurement data shows that non-uniform Joule heating causes electronic inhomogeneities to develop within the nanobeam and is responsible for driving the transition in VO2. Surprisingly, field assisted emission mechanisms such as Poole-Frenkel effect is found to be absent and the role of percolation is also identified in the electrically driven transition. This Thesis also provides a new insight into the mechanisms behind the electrolyte gating induced resistance modulation and the suppression of MIT in VO2. We show that the metallic phase of VO2 induced by electrolyte gating is due to an electrochemical process and can be both reversible and irreversible under different conditions. The kinetics of the redox processes increase with temperature; a complete suppression of the transition and the stabilization of the metallic phase are achievable by gating in the rutile metallic phase. First principles calculations show that the destabilization of the insulating phase during the gating arises due to the formation of oxygen vacancies in VO2; the rutile phase is far more amenable to electrochemical reduction as compared to the monoclinic phase, likely due to its higher electrical conductivity. The generation of oxygen vacancies appears thermodynamically favorable if the removed oxygen atoms from VO2 oxidize the anions in the ionic liquid. Finally, electronic properties of single crystalline, individual nanowires of vanadium oxide bronzes (MxVO 2O5) are presented. The intercalation effects of metal cation and the stoichiometry (x) are explored and discussed. These nanowires exhibit thermally and electrically driven charge ordering and metal to insulator transitions. The electrolyte gating measurements show resistance modulations across the phase transition but the effect is not as dramatic as in VO2.

Deposition and characterization of stoichiometric films of V2O5 on Pd(111)

NASA Astrophysics Data System (ADS)

Feng, Xu; Abdel-Rahman, Mohammed K.; Kruppe, Christopher M.; Trenary, Michael

2017-10-01

A simple and efficient method has been used to grow V2O5 thin films on Pd(111) at a substrate temperature of 300 K through physical vapor deposition by heating a fine powder of V2O5 in a non-oxidative, UHV environment. X-ray photoelectron spectroscopy (XPS), reflection absorption infrared spectroscopy (RAIRS) and low energy electron diffraction (LEED) were used to characterize the thin films. When the as-grown films exceed a minimum thickness, characteristic features of V2O5 were revealed by XPS and RAIRS, which confirms the presence of stoichiometric V2O5. LEED indicates no long range order of the as-grown films at 300 K. Annealing to temperatures between 600 and 700 K causes a reduction of V2O5 to VO2 as identified by XPS and the formation of ordered structures as determined by LEED, and VO2 is predominant after annealing to 800 K. After further annealing to 1000 K, only an ordered form of V2O3 is present on Pd(111).

Oxygen-vacancy-mediated dielectric property in perovskite Eu0.5Ba0.5TiO3-δ epitaxial thin films

NASA Astrophysics Data System (ADS)

Li, Weiwei; Gu, Junxing; He, Qian; Zhang, Kelvin H. L.; Wang, Chunchang; Jin, Kuijuan; Wang, Yongqiang; Acosta, Matias; Wang, Haiyan; Borisevich, Albina Y.; MacManus-Driscoll, Judith L.; Yang, Hao

2018-04-01

Dielectric relaxation in ABO3 perovskite oxides can result from many different charge carrier-related phenomena. Despite a strong understanding of dielectric relaxations, a detailed investigation of the relationship between the content of oxygen vacancies (VO) and dielectric relaxation has not been performed in perovskite oxide films. In this work, we report a systematic investigation of the influence of the VO concentration on the dielectric relaxation of Eu0.5Ba0.5TiO3-δ epitaxial thin films. Nuclear resonance backscattering spectrometry was used to directly measure the oxygen concentration in Eu0.5Ba0.5TiO3-δ films. We found that dipolar defects created by VO interact with the off-centered Ti ions, which results in the dielectric relaxation in Eu0.5Ba0.5TiO3-δ films. Activation energy gradually increases with the increasing content of VO. The present work significantly extends our understanding of relaxation properties in oxide films.

Oxidation State Discrimination in the Atomic Layer Deposition of Vanadium Oxides

DOE PAGES

Weimer, Matthew S.; Kim, In Soo; Guo, Peijun; ...

2017-06-02

We describe the use of a vanadium 3+ precursor for atomic layer deposition (ALD) of thin films that span the common oxidation states of vanadium oxides. Self-limiting surface synthesis of V 2O 3, VO 2, and V 2O 5 are realized via four distinct reaction mechanisms accessed via judicious choice of oxygen ALD partners. In situ quartz crystal microbalance and quadrupole mass spectrometry were used to study the reaction mechanism of the vanadium precursor with O 3, H 2O 2, H 2O/O 2, and H 2O 2/H 2. A clear distinction between non-oxidative protic ligand exchange and metal oxidation ismore » demonstrated through sequential surface reactions with different non-metal precursors. This synergistic effect, provides greater control of the resultant metal species in the film, as well as reactive surface species during growth. In an extension of this approach, we introduce oxidation state control through reducing equivalents of H 2 gas. When H 2 is dosed after H 2O 2 during growth, amorphous films of VO 2 are deposited that are readily crystallized with a low temperature anneal. These VO 2 films show a temperature dependent Raman spectroscopy response in the expected range and consistent with the well-known phase-change behavior of VO 2.« less

Role of thermal heating on the voltage induced insulator-metal transition in VO2.

PubMed

Zimmers, A; Aigouy, L; Mortier, M; Sharoni, A; Wang, Siming; West, K G; Ramirez, J G; Schuller, Ivan K

2013-02-01

We show that the main mechanism for the dc voltage or dc current induced insulator-metal transition in vanadium dioxide VO(2) is due to local Joule heating and not a purely electronic effect. This "tour de force" experiment was accomplished by using the fluorescence spectra of rare-earth doped micron sized particles as local temperature sensors. As the insulator-metal transition is induced by a dc voltage or dc current, the local temperature reaches the transition temperature indicating that Joule heating plays a predominant role. This has critical implications for the understanding of the dc voltage or dc current induced insulator-metal transition and has a direct impact on applications which use dc voltage or dc current to externally drive the transition.

Photoelectrochemical performance of W-doped BiVO4 thin films deposited by spray pyrolysis

NASA Astrophysics Data System (ADS)

Holland, S. Keith; Dutter, Melissa R.; Lawrence, David J.; Reisner, Barbara A.; DeVore, Thomas C.

2014-01-01

The effects of tungsten doping and hydrogen annealing on the photoelectrochemical (PEC) performance of bismuth vanadate (BiVO4) photoanodes for solar water splitting were studied. Thin films of BiVO were deposited on indium tin oxide-coated glass slides by ultrasonic spray pyrolysis of an aqueous solution containing bismuth nitrate and vanadium oxysulfate. Tungsten doping was achieved by adding either silicotungstic acid (STA) or ammonium metatungstate (AMT) to the precursor. The 1.7- to 2.2-μm-thick films exhibited a highly porous microstructure. Undoped films that were reduced at 375°C in 3% H exhibited the largest photocurrent densities under 0.1 W cm-2 AM1.5 illumination, where photocurrent densities of up to 1.3 mA cm-2 at 0.5 V with respect to Ag/AgCl were achieved. Films doped with 1% or 5% (atomic percent) tungsten from either STA or AMT exhibited reduced PEC performance and greater sample-to-sample performance variations. Powder x-ray diffraction data indicated that the films continue to crystallize in the monoclinic polymorph at low doping levels but crystallize in the tetragonal scheelite structure at higher doping. It is surmised that the phase and morphology differences promoted by the addition of W during the deposition process reduced the PEC performance as measured by photovoltammetry.

Two-step electrodeposition to fabricate the p-n heterojunction of a Cu2O/BiVO4 photoanode for the enhancement of photoelectrochemical water splitting.

PubMed

Bai, Shouli; Liu, Jingchao; Cui, Meng; Luo, Ruixian; He, Jing; Chen, Aifan

2018-05-15

A Cu2O/BiVO4 p-n heterojunction based photoanode in photoelectrochemical (PEC) water splitting is fabricated by a two-step electrodeposition method on an FTO substrate followed by annealing treatment. The structures and properties of the samples are characterized by XRD, FESEM, HRTEM, XPS and UV-visible spectra. The photoelectrochemical activity of the photoanode in water oxidation has been investigated and measured in a three electrode quartz cell system; the obtained maximum photocurrent density of 1.72 mA cm-2 at 1.23 V vs. RHE is 4.5 times higher than that of pristine BiVO4 thin films (∼0.38 mA cm-2). The heterojunction based photoanode also exhibits a tremendous cathodic shift of the onset potential (∼420 mV) and enhancement in the IPCE value by more than 4-fold. The enhanced photoelectrochemical properties of the Cu2O/BiVO4 photoelectrode are attributed to the efficient separation of the photoexcited electron-hole pairs caused by the inner electronic field (IEF) of the p-n heterojunction.

Growth control of the oxidation state in vanadium oxide thin films

NASA Astrophysics Data System (ADS)

Lee, Shinbuhm; Meyer, Tricia L.; Park, Sungkyun; Egami, Takeshi; Lee, Ho Nyung

2014-12-01

Precise control of the chemical valence or oxidation state of vanadium in vanadium oxide thin films is highly desirable for not only fundamental research but also technological applications that utilize the subtle change in the physical properties originating from the metal-insulator transition (MIT) near room temperature. However, due to the multivalent nature of vanadium and the lack of a good understanding on growth control of the oxidation state, stabilization of phase pure vanadium oxides with a single oxidation state is extremely challenging. Here, we systematically varied the growth conditions to clearly map out the growth window for preparing phase pure epitaxial vanadium oxides by pulsed laser deposition for providing a guideline to grow high quality thin films with well-defined oxidation states of V2 + 3 O 3 , V + 4 O 2 , and V2 + 5 O 5 . A well pronounced MIT was only observed in VO2 films grown in a very narrow range of oxygen partial pressure P(O2). The films grown either in lower (<10 mTorr) or higher P(O2) (>25 mTorr) result in V2O3 and V2O5 phases, respectively, thereby suppressing the MIT for both cases. We have also found that the resistivity ratio before and after the MIT of VO2 thin films can be further enhanced by one order of magnitude when the films are further oxidized by post-annealing at a well-controlled oxidizing ambient. This result indicates that stabilizing vanadium into a single valence state has to compromise with insufficient oxidation of an as grown thin film and, thereby, a subsequent oxidation is required for an improved MIT behavior.

Growth control of the oxidation state in vanadium oxide thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, Shinbuhm; Meyer, Tricia L.; Lee, Ho Nyung, E-mail: hnlee@ornl.gov

2014-12-01

Precise control of the chemical valence or oxidation state of vanadium in vanadium oxide thin films is highly desirable for not only fundamental research but also technological applications that utilize the subtle change in the physical properties originating from the metal-insulator transition (MIT) near room temperature. However, due to the multivalent nature of vanadium and the lack of a good understanding on growth control of the oxidation state, stabilization of phase pure vanadium oxides with a single oxidation state is extremely challenging. Here, we systematically varied the growth conditions to clearly map out the growth window for preparing phase puremore » epitaxial vanadium oxides by pulsed laser deposition for providing a guideline to grow high quality thin films with well-defined oxidation states of V{sub 2}{sup +3}O{sub 3}, V{sup +4}O{sub 2}, and V{sub 2}{sup +5}O{sub 5}. A well pronounced MIT was only observed in VO{sub 2} films grown in a very narrow range of oxygen partial pressure P(O{sub 2}). The films grown either in lower (<10 mTorr) or higher P(O{sub 2}) (>25 mTorr) result in V{sub 2}O{sub 3} and V{sub 2}O{sub 5} phases, respectively, thereby suppressing the MIT for both cases. We have also found that the resistivity ratio before and after the MIT of VO{sub 2} thin films can be further enhanced by one order of magnitude when the films are further oxidized by post-annealing at a well-controlled oxidizing ambient. This result indicates that stabilizing vanadium into a single valence state has to compromise with insufficient oxidation of an as grown thin film and, thereby, a subsequent oxidation is required for an improved MIT behavior.« less

Effect of aging heat time and annealing temperature on the properties of nanocrystalline tin dioxide thin films

NASA Astrophysics Data System (ADS)

Kadhim, Imad H.; Abu Hassan, H.

2017-04-01

Nanocrystalline tin dioxide (SnO2) thin films have been successfully prepared by sol-gel spin-coating technique on p-type Si (100) substrates. A stable solution was prepared by mixing tin(II) chloride dihydrate, pure ethanol, and glycerin. Temperature affects the properties of SnO2 thin films, particularly the crystallite size where the crystallization of SnO2 with tetragonal rutile structure is achieved when thin films that prepared under different aging heat times are annealed at 400∘C. By increasing aging heat time in the presence of annealing temperatures the FESEM images indicated that the thickness of the fabricated film was directly proportional to solution viscosity, increasing from approximately 380 nm to 744 nm, as well as the crystallization of the thin films improved and reduced defects.

Ultrathin Lutetium Oxide Film as an Epitaxial Hole-Blocking Layer for Crystalline Bismuth Vanadate Water Splitting Photoanodes

DOE PAGES

Zhang, Wenrui; Yan, Danhua; Tong, Xiao; ...

2018-01-08

Here a novel ultrathin lutetium oxide (Lu 2O 3) interlayer is integrated with crystalline bismuth vanadate (BiVO4) thin film photoanodes to facilitate carrier transport through atomic-scale interface control. The epitaxial Lu 2O 32O 3

Atomic Layer Deposition of Bismuth Vanadates for Solar Energy Materials.

PubMed

Stefik, Morgan

2016-07-07

The fabrication of porous nanocomposites is key to the advancement of energy conversion and storage devices that interface with electrolytes. Bismuth vanadate, BiVO4 , is a promising oxide for solar water splitting where the controlled fabrication of BiVO4 layers within porous, conducting scaffolds has remained a challenge. Here, the atomic layer deposition of bismuth vanadates is reported from BiPh3 , vanadium(V) oxytriisopropoxide, and water. The resulting films have tunable stoichiometry and may be crystallized to form the photoactive scheelite structure of BiVO4 . A selective etching process was used with vanadium-rich depositions to enable the synthesis of phase-pure BiVO4 after spinodal decomposition. BiVO4 thin films were measured for photoelectrochemical performance under AM 1.5 illumination. The average photocurrents were 1.17 mA cm(-2) at 1.23 V versus the reversible hydrogen electrode using a hole-scavenging sulfite electrolyte. The capability to deposit conformal bismuth vanadates will enable a new generation of nanocomposite architectures for solar water splitting. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Carbon quantum dots coated BiVO{sub 4} inverse opals for enhanced photoelectrochemical hydrogen generation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nan, Feng; Shen, Mingrong; Fang, Liang, E-mail: zhkang@suda.edu.cn, E-mail: lfang@suda.edu.cn

Carbon quantum dots (CQDs) coated BiVO{sub 4} inverse opal (io-BiVO{sub 4}) structure that shows dramatic improvement of photoelectrochemical hydrogen generation has been fabricated using electrodeposition with a template. The io-BiVO{sub 4} maximizes photon trapping through slow light effect, while maintaining adequate surface area for effective redox reactions. CQDs are then incorporated to the io-BiVO{sub 4} to further improve the photoconversion efficiency. Due to the strong visible light absorption property of CQDs and enhanced separation of the photoexcited electrons, the CQDs coated io-BiVO{sub 4} exhibit a maximum photo-to-hydrogen conversion efficiency of 0.35%, which is 6 times higher than that of themore » pure BiVO{sub 4} thin films. This work is a good example of designing composite photoelectrode by combining quantum dots and photonic crystal.« less

SUPERFUND TREATABILITY CLEARINGHOUSE: INPUT/OUTPUT DATA FOR SEVERAL TREATMENT TECHNOLOGIES

EPA Science Inventory

This treatability study is a pilot-scale evaluation of a thin-film evaporator (TFE) for volatile organics (VO) removal from oily sludges such as refinery sludges. TFEs were studied to evaluate their use to remove and recover VO from these sludges prior to land treatment. This w...

Simultaneous sampling of tissue oxygenation and oxygen consumption in skeletal muscle.

PubMed

Nugent, William H; Song, Bjorn K; Pittman, Roland N; Golub, Aleksander S

2016-05-01

Under physiologic conditions, microvascular oxygen delivery appears to be well matched to oxygen consumption in respiring tissues. We present a technique to measure interstitial oxygen tension (PISFO2) and oxygen consumption (VO2) under steady-state conditions, as well as during the transitions from rest to activity and back. Phosphorescence Quenching Microscopy (PQM) was employed with pneumatic compression cycling to achieve 1 to 10 Hz sampling rates of interstitial PO2 and simultaneous recurrent sampling of VO2 (3/min) in the exteriorized rat spinotrapezius muscle. The compression pressure was optimized to 120-130 mmHg without adverse effect on the tissue preparation. A cycle of 5s compression followed by 15s recovery yielded a resting VO2 of 0.98 ± 0.03 ml O2/100 cm(3)min while preserving microvascular oxygen delivery. The measurement system was then used to assess VO2 dependence on PISFO2 at rest and further tested under conditions of isometric muscle contraction to demonstrate a robust ability to monitor the on-kinetics of tissue respiration and the compensatory changes in PISFO2 during contraction and recovery. The temporal and spatial resolution of this approach is well suited to studies seeking to characterize microvascular oxygen supply and demand in thin tissues. Copyright © 2015 Elsevier Inc. All rights reserved.

Laser-processing of VO2 thin films synthesized by polymer-assisted-deposition

NASA Astrophysics Data System (ADS)

Breckenfeld, Eric; Kim, Heungsoo; Gorzkowski, Edward P.; Sutto, Thomas E.; Piqué, Alberto

2017-03-01

We investigate a novel route for synthesis and laser-sintering of VO2 thin films via solution-based polymer-assisted-deposition (PAD). By replacing the traditional solvent for PAD (water) with propylene glycol, we are able to control the viscosity and improve the environmental stability of the precursor. The solution stability and ability to control the viscosity makes for an ideal solution to pattern simple or complex shapes via direct-write methods. We demonstrate the potential of our precursor for printing applications by combining PAD with laser induced forward transfer (LIFT). We also demonstrate large-area film synthesis on 4 in. diameter glass wafers. By varying the annealing temperature, we identify the optimal synthesis conditions, obtaining optical transmittance changes of 60% at a 2500 nm wavelength and a two-order-of-magnitude semiconductor-to-metal transition. We go on to demonstrate two routes for improved semiconductor-to-metal characteristics. The first method uses a multi-coating process to produce denser films with large particles. The second method uses a pulsed-UV-laser sintering step in films annealed at low temperatures (<450° C) to promote particle growth and improve the semiconductor-to-metal transition. By comparing the hysteresis width and semiconductor-to-metal transition magnitude in these samples, we demonstrate that both methods yield high quality VO2 with a three-order-of-magnitude transition.

Effect of defect creation and migration on hump characteristics of a-InGaZnO thin film transistors under long-term drain bias stress with light illumination

NASA Astrophysics Data System (ADS)

Cho, Yong-Jung; Kim, Woo-Sic; Lee, Yeol-Hyeong; Park, Jeong Ki; Kim, Geon Tae; Kim, Ohyun

2018-06-01

We investigated the mechanism of formation of the hump that occurs in the current-voltage I-V characteristics of amorphous InGaZnO (a-IGZO) thin film transistors (TFTs) that are exposed to long-term drain bias stress under illumination. Transfer characteristics showed two-stage degradation under the stress. At the beginning of the stress, the I-V characteristics shifted in the negative direction with a degradation of subthreshold slope, but the hump phenomenon developed over time in the I-V characteristics. The development of the hump was related to creation of defects, especially ionized oxygen vacancies which act as shallow donor-like states near the conduction-band minimum in a-IGZO. To further investigate the hump phenomenon we measured a capacitance-voltage C-V curve and performed two-dimensional device simulation. Stretched-out C-V for the gate-to-drain capacitance and simulated electric field distribution which exhibited large electric field near the drain side of TFT indicated that VO2+ were generated near the drain side of TFT, but the hump was not induced when VO2+ only existed near the drain side. Therefore, the degradation behavior under DBITS occurred because VO2+ were created near the drain side, then were migrated to the source side of the TFT.

Low temperature fabrication of VO x thin films for uncooled IR detectors by direct current reactive magnetron sputtering method

NASA Astrophysics Data System (ADS)

Dai, Jun; Wang, Xingzhi; He, Shaowei; Huang, Ying; Yi, Xinjian

2008-03-01

Vanadium oxide films have been fabricated on Si3N4-film-coated silicon substrates by direct current reactive magnetron sputtering method. Conditions of deposition are optimized making use of parameters such as sputtering time, dc power, oxygen partial pressure and substrate temperature. X-ray diffraction indicates that the film is a mixture of VO2, V2O3, and V3O5. Four-probe measurement shows that the VOx thin film owns high temperature coefficient of resistance (TCR ∼-2.05%/°C) and suitable square resistance 18.40 kΩ/□ (measured at 25 °C), indicating it is a well candidate material for uncooled IR detectors. In addition, IR absorption in the wavelength of 2-16 μm has been characterized. It is worth noting that the films are sputtered at a relatively low temperature of 210 °C in a controlled Ar/O2 atmosphere. Compared to traditional craft, this method needs no post-anneal at high temperature (400-500 °C).

Structural analysis of LaVO3 thin films under epitaxial strain

NASA Astrophysics Data System (ADS)

Meley, H.; Karandeep, Oberson, L.; de Bruijckere, J.; Alexander, D. T. L.; Triscone, J.-M.; Ghosez, Ph.; Gariglio, S.

2018-04-01

Rare earth vanadate perovskites exhibit a phase diagram in which two different types of structural distortions coexist: the strongest, the rotation of the oxygen octahedra, comes from the small tolerance factor of the perovskite cell (t = 0.88 for LaVO3) and the smaller one comes from inter-site d-orbital interactions manifesting as a cooperative Jahn-Teller effect. Epitaxial strain acts on octahedral rotations and crystal field symmetry to alter this complex lattice-orbit coupling. In this study, LaVO3 thin film structures have been investigated by X-ray diffraction and scanning transmission electron microscopy. The analysis shows two different orientations of octahedral tilt patterns, as well as two distinct temperature behaviors, for compressive and tensile film strain states. Ab initio calculations capture the strain effect on the tilt pattern orientation in agreement with experimental data.

Investigation of plasma dynamics during the growth of amorphous titanium dioxide thin films

NASA Astrophysics Data System (ADS)

Kim, Jin-Soo; Jee, Hyeok; Yu, Young-Hun; Seo, Hye-Won

2018-06-01

We have grown amorphous titanium dioxide thin films by reactive DC sputtering method using a different argon/oxygen partial pressure at a room temperature. The plasma dynamics of the process, reactive and sputtered gas particles was investigated via optical emission spectroscopy. We then studied the correlations between the plasma states and the structural/optical properties of the films. The growth rate and morphology of the titanium dioxide thin films turned out to be contingent with the population and the energy profile of Ar, O, and TiO plasma. In particular, the films grown under energetic TiO plasma have shown a direct band-to-band transition with an optical energy band gap up to ∼4.2 eV.

Chemical vapor deposition of silicon, silicon dioxide, titanium and ferroelectric thin films

NASA Astrophysics Data System (ADS)

Chen, Feng

Various silicon-based thin films (such as epitaxial, polycrystalline and amorphous silicon thin films, silicon dioxide thin films and silicon nitride thin films), titanium thin film and various ferroelectric thin films (such as BaTiO3 and PbTiO3 thin films) play critical roles in the manufacture of microelectronics circuits. For the past few years, there have been tremendous interests to search for cheap, safe and easy-to-use methods to develop those thin films with high quality and good step coverage. Silane is a critical chemical reagent widely used to deposit silicon-based thin films. Despite its wide use, silane is a dangerous material. It is pyrophoric, extremely flammable and may explode from heat, shock and/or friction. Because of the nature of silane, serious safety issues have been raised concerning the use, transportation, and storage of compressed gas cylinders of silane. Therefore it is desired to develop safer ways to deposit silicon-based films. In chapter III, I present the results of our research in the following fields: (1) Silane generator, (2) Substitutes of silane for deposition of silicon and silicon dioxide thin films, (3) Substitutes of silane for silicon dioxide thin film deposition. In chapter IV, hydropyridine is introduced as a new ligand for use in constructing precursors for chemical vapor deposition. Detachement of hydropyridine occurs by a low-temperature reaction leaving hydrogen in place of the hydropyridine ligands. Hydropyridine ligands can be attached to a variety of elements, including main group metals, such as aluminum and antimony, transition metals, such as titanium and tantalum, semiconductors such as silicon, and non-metals such as phosphorus and arsenic. In this study, hydropyridine-containing titanium compounds were synthesized and used as chemical vapor deposition precursors for deposition of titanium containing thin films. Some other titanium compounds were also studied for comparison. In chapter V, Chemical Vapor Depositions (CVD) of many oxide thin films including ferroelectric and high dielectric constant BaTiO3, SrTiO 3 and PbTiO3 films had been carried out under reduced pressure (30 torr--80 torr) using liquid precursors containing beta-diketone ligands. The relative reactivities of Ba(beta-diketonate)2, Sr(beta-diketonate) 2, Pb(beta-diketonate)2, Ti(beta-diketonate)3, TiO(beta-diketonate)2 and Ti(OiPr)2(beta-diketonate) 2 had been studied individually prior to the deposition of BaTiO 3, SrTiO3 and PbTiO3 thin films from the mixtures of corresponding precursors. By using multi-step deposition method, carbon free stoichiometric BaTiO3 thin films uniform in large area have been achieved.

Electrical switching dynamics and broadband microwave characteristics of VO2 radio frequency devices

NASA Astrophysics Data System (ADS)

Ha, Sieu D.; Zhou, You; Fisher, Christopher J.; Ramanathan, Shriram; Treadway, Jacob P.

2013-05-01

Vanadium dioxide (VO2) is a correlated electron system that features a metal-insulator phase transition (MIT) above room temperature and is of interest in high speed switching devices. Here, we integrate VO2 into two-terminal coplanar waveguides and demonstrate a large resistance modulation of the same magnitude (>103) in both electrically (i.e., by bias voltage, referred to as E-MIT) and thermally (T-MIT) driven transitions. We examine transient switching characteristics of the E-MIT and observe two distinguishable time scales for switching. We find an abrupt jump in conductivity with a rise time of the order of 10 ns followed by an oscillatory damping to steady state on the order of several μs. We characterize the RF power response in the On state and find that high RF input power drives VO2 further into the metallic phase, indicating that electromagnetic radiation-switching of the phase transition may be possible. We measure S-parameter RF properties up to 13.5 GHz. Insertion loss is markedly flat at 2.95 dB across the frequency range in the On state, and sufficient isolation of over 25 dB is observed in the Off state. We are able to simulate the RF response accurately using both lumped element and 3D electromagnetic models. Extrapolation of our results suggests that optimizing device geometry can reduce insertion loss further and maintain broadband flatness up to 40 GHz.

DFT+DMFT study of strain and interface effects in d1 and d2 t2 g-perovskites

NASA Astrophysics Data System (ADS)

Sclauzero, Gabriele; Dymkowski, Krzysztof; Ederer, Claude

2015-03-01

Metal-insulator transitions in thin films of early-transition metal correlated oxides are linked to both epitaxial strain and electronic reconstruction at the film/substrate interface. We separately address these two key factors for LaTiO3 and LaVO3 through density functional theory plus dynamical mean-field theory (DFT+DMFT). We find that mere epitaxial strain suffices to induce an insulator-to-metal transition in LaTiO3, but not in LaVO3, in agreement with recent experiments. We show that this difference can be explained by the combined effect of strain-induced changes in the crystal field splitting of t2 g orbitals and different orbital filling in these two materials. The role of the interface is investigated through DFT+DMFT simulations of LaVO3/SrTiO3 heterostructures with varying superlattice periodicities and substrate terminations. Our aim is to assess whether the metallicity observed at the LaVO3/SrTiO3 interface could be driven by pure electronic reconstruction effects, rather than structural or stoichiometric reasons (such as, e.g., O-related defects).

Studies on annealed ZnO:V thin films deposited by nebulised spray pyrolysis method

NASA Astrophysics Data System (ADS)

Malini, D. Rachel

2018-04-01

Structural, optical and photoluminescence properties of annealed ZnO:V thin films deposited by nebulized spray pyrolysis technique by varying vanadium concentration are studied. Thickness of thin films varies from 1.52µm to 7.78µm. V2O5, VO2 and ZnO peaks are observed in XRD patterns deposited with high vanadium concentration and the intensity of peaks corresponding to ZnO decreases in those samples. Morphological properties were studied by analysing SEM images and annealed thin films deposited at ZnO:V = 50:50 possess dumb bell shape grains. Emission peaks corresponding to both Augur transition and deep level transition are observed in the PL spectra of the samples.

Integrating a Semitransparent, Fullerene-Free Organic Solar Cell in Tandem with a BiVO4 Photoanode for Unassisted Solar Water Splitting.

PubMed

Peng, Yuelin; Govindaraju, Gokul V; Lee, Dong Ki; Choi, Kyoung-Shin; Andrew, Trisha L

2017-07-12

We report an unassisted solar water splitting system powered by a diketopyrrolopyrrole (DPP)-containing semitransparent organic solar cell. Two major merits of this fullerene-free solar cell enable its integration with a BiVO 4 photoanode. First is the high open circuit voltage and high fill factor displayed by this single junction solar cell, which yields sufficient power to effect water splitting when serially connected to an appropriate electrode/catalyst. Second, the wavelength-resolved photoaction spectrum of the DPP-based solar cell has minimal overlap with that of the BiVO 4 photoanode, thus ensuring that light collection across these two components can be optimized. The latter feature enables a new water splitting device configuration wherein the solar cell is placed first in the path of incident light, before the BiVO 4 photoanode, although BiVO 4 has a wider bandgap. This configuration is accessed by replacing the reflective top electrode of the standard DPP-based solar cell with a thin metal film and an antireflection layer, thus rendering the solar cell semitransparent. In this configuration, incident light does not travel through the aqueous electrolyte to reach the solar cell or photoanode, and therefore, photon losses due to the scattering of water are reduced. Moreover, this new configuration allows the BiVO 4 photoanode to be back-illuminated, i.e., through the BiVO 4 /back contact interface, which leads to higher photocurrents compared to front illumination. The combination of a semitransparent single-junction solar cell and a BiVO 4 photoanode coated with oxygen evolution catalysts in a new device configuration yielded an unassisted solar water splitting system with a solar-to-hydrogen conversion efficiency of 2.2% in water.

Photoelectrochemical performance of W-doped BiVO4 thin-films deposited by spray pyrolysis

NASA Astrophysics Data System (ADS)

Holland, Stephen K.; Dutter, Melissa R.; Lawrence, David J.; Reisner, Barbara A.; DeVore, Thomas C.

2013-09-01

The effect of tungsten doping and hydrogen annealing treatments on the photoelectrochemical (PEC) performance of bismuth vanadate (BiVO4) photoanodes for solar water splitting was studied. Thin films of BiVO4 were deposited on ITO-coated glass slides by ultrasonic spray pyrolysis of an aqueous solution containing bismuth nitrate and vanadium oxysulfate. Tungsten doping was achieved by adding either silicotungstic acid (STA) or ammonium metatungstate (AMT) in the aqueous precursor. The 1.7 μm - 2.2 μm thick films exhibited a highly porous microstructure. Undoped films that were reduced at 375 ºC in 3% H2 exhibited the largest photocurrent densities under 0.1 W cm-2 AM1.5 illumination. This performance enhancement was believed to be due to the formation of oxygen vacancies, which are shallow electron donors, in the films. Films doped with 1% or 5% tungsten from either STA or AMT exhibited reduced photoelectrochemical performance and greater sample-to-sample performance variations. Powder X-ray diffraction data of the undoped films indicated that they were comprised primarily of the monoclinic scheelite phase while unidentified phases were also present. Scanning electron microscopy showed slightly different morphology characteristics for the Wdoped films. It is surmised that the addition of W in the deposition process promoted the morphology differences and the formation of different phases, thus reducing the PEC performance of the photoanode samples. Significant PEC performance variability was also observed among films deposited using the described process.

Deposition of vanadium oxide films by direct-current magnetron reactive sputtering

NASA Astrophysics Data System (ADS)

Kusano, E.; Theil, J. A.; Thornton, John A.

1988-06-01

It is demonstrated here that thin films of vanadium oxide can be deposited at modest substrate temperatures by dc reactive sputtering from a vanadium target in an O2-Ar working gas using a planar magnetron source. Resistivity ratios of about 5000 are found between a semiconductor phase with a resistivity of about 5 Ohm cm and a metallic phase with a resistivity of about 0.001 Ohm cm for films deposited onto borosilicate glass substrates at about 400 C. X-ray diffraction shows the films to be single-phase VO2 with a monoclinic structure. The VO2 films are obtained for a narrow range of O2 injection rates which correspond to conditions where cathode poisoning is just starting to occur.

Deposition of vanadium oxide films by direct-current magnetron reactive sputtering

NASA Technical Reports Server (NTRS)

Kusano, E.; Theil, J. A.; Thornton, John A.

1988-01-01

It is demonstrated here that thin films of vanadium oxide can be deposited at modest substrate temperatures by dc reactive sputtering from a vanadium target in an O2-Ar working gas using a planar magnetron source. Resistivity ratios of about 5000 are found between a semiconductor phase with a resistivity of about 5 Ohm cm and a metallic phase with a resistivity of about 0.001 Ohm cm for films deposited onto borosilicate glass substrates at about 400 C. X-ray diffraction shows the films to be single-phase VO2 with a monoclinic structure. The VO2 films are obtained for a narrow range of O2 injection rates which correspond to conditions where cathode poisoning is just starting to occur.

Fuel Retention Improvement at High Temperatures in Tungsten-Uranium Dioxide Dispersion Fuel Elements by Plasma-Spray Cladding

NASA Technical Reports Server (NTRS)

Grisaffe, Salvatore J.; Caves, Robert M.

1964-01-01

An investigation was undertaken to determine the feasibility of depositing integrally bonded plasma-sprayed tungsten coatings onto 80-volume-percent tungsten - 20-volume-percent uranium dioxide composites. These composites were face clad with thin tungsten foil to inhibit uranium dioxide loss at elevated temperatures, but loss at the unclad edges was still significant. By preheating the composite substrates to approximately 3700 degrees F in a nitrogen environment, metallurgically bonded tungsten coatings could be obtained directly by plasma spraying. Furthermore, even though these coatings were thin and somewhat porous, they greatly inhibited the loss of uranium dioxide. For example, a specimen that was face clad but had no edge cladding lost 5.8 percent uranium dioxide after 2 hours at 4750 dgrees F in flowing hydrogen. A similar specimen with plasma-spray-coated edges, however, lost only 0.75 percent uranium dioxide under the same testing conditions.

Temperature dependence of laser induced insulator-metal transition in VO2

NASA Astrophysics Data System (ADS)

Wang, Siming; Bar-Ad, Shimshon; Ramirez, Juan Gabriel; Huppert, Dan; Schuller, Ivan K.

2013-03-01

We performed optical pump-probe experiments on VO2 thin films with low laser fluence at temperatures ranging across the insulator-metal transition (IMT). At room temperature, the reflectivity of VO2 increases in the first 400-500 fs when pumped by 150 fs laser pulses. An exponential decay of the reflectivity is observed in the following 1 ps. Interestingly, as the temperature approaches the transition temperature (340 K), the reflectivity shows a second increase on an 80 ps time scale following the exponential decay, indicating an IMT. We propose that the decay of the reflectivity is due to electron-phonon thermalization, which raises the phonon temperature and causes a superheating of the lattice. This process provides the latent heat and induces the IMT on the 80 ps time scale. The coexistence of the insulating and metallic phases is observed in the reflectivity measurements for temperatures above 340 K. This work is supported by the Air Force Office of Scientific Research No. FA9550-12-1-0381.

Measurement of a solid-state triple point at the metal-insulator transition in VO2.

PubMed

Park, Jae Hyung; Coy, Jim M; Kasirga, T Serkan; Huang, Chunming; Fei, Zaiyao; Hunter, Scott; Cobden, David H

2013-08-22

First-order phase transitions in solids are notoriously challenging to study. The combination of change in unit cell shape, long range of elastic distortion and flow of latent heat leads to large energy barriers resulting in domain structure, hysteresis and cracking. The situation is worse near a triple point, where more than two phases are involved. The well-known metal-insulator transition in vanadium dioxide, a popular candidate for ultrafast optical and electrical switching applications, is a case in point. Even though VO2 is one of the simplest strongly correlated materials, experimental difficulties posed by the first-order nature of the metal-insulator transition as well as the involvement of at least two competing insulating phases have led to persistent controversy about its nature. Here we show that studying single-crystal VO2 nanobeams in a purpose-built nanomechanical strain apparatus allows investigation of this prototypical phase transition with unprecedented control and precision. Our results include the striking finding that the triple point of the metallic phase and two insulating phases is at the transition temperature, Ttr = Tc, which we determine to be 65.0 ± 0.1 °C. The findings have profound implications for the mechanism of the metal-insulator transition in VO2, but they also demonstrate the importance of this approach for mastering phase transitions in many other strongly correlated materials, such as manganites and iron-based superconductors.

Electronic structure of oxygen-vacancy defects in amorphous In-Ga-Zn-O semiconductors

NASA Astrophysics Data System (ADS)

Noh, Hyeon-Kyun; Chang, K. J.; Ryu, Byungki; Lee, Woo-Jin

2011-09-01

We perform first-principles density functional calculations to investigate the atomic and electronic properties of various O-vacancy (VO) defects in amorphous indium gallium zinc oxides (a-IGZO). The formation energies of VO have a tendency to increase with increasing number of neighboring Ga atoms, whereas they are generally low in the environment surrounded with In atoms. Thus, adding Ga atoms suppresses the formation of O-deficiency defects, which are considered as the origin of device instability in a-IGZO-based thin film transistors. The conduction band edge state is characterized by the In s orbital and insensitive to disorder, in good agreement with the experimental finding that increasing the In content enhances the carrier density and mobility. In a-IGZO, while most VO defects are deep donors, some of the defects act as shallow donors due to local environments different from those in crystalline oxides. As ionized O vacancies can capture electrons, it is suggested that these defects are responsible for positive shifts of the threshold voltage observed under positive gate bias stress. Under light illumination stress, VO defects can be ionized, becoming VO2+ defects due to the negative-U behavior. When electrons are captured by applying a negative bias voltage, ionized VO2+ defects return to the original neutral charge state. Through molecular dynamics simulations, we find that the initial neutral state is restored by annealing, in good agreement with experiments, although the annealing temperature depends on the local environment. Our calculations show that VO defects play an important role in the instability of a-IGZO-based devices.

Optical properties of titanium di-oxide thin films prepared by dip coating method

NASA Astrophysics Data System (ADS)

Biswas, Sayari; Rahman, Kazi Hasibur; Kar, Asit Kumar

2018-05-01

Titanium dioxide (TiO2) thin films were prepared by sol-gel dip coating method on ITO coated glass substrate. The sol was synthesized by hydrothermal method at 90°C. The sol was then used to make TiO2 films by dip coating. After dip coating the rest of the sol was dried at 100°C to make TiO2 powder. Thin films were made by varying the number of dipping cycles and were annealed at 500°C. XRD study was carried out for powder samples that confirms the formation of anatase phase. Transmission spectra of thin films show sharp rise in the violet-ultraviolet transition region and a maximum transmittance of ˜60%. Band gap of the prepared films varies from 3.15 eV to 3.22 eV.

Cardiorespiratory performance of coronary artery disease patients on land versus underwater treadmill tests: a comparative study.

PubMed

Garcia, Mauricio Koprowski; Rizzo, Limanara; Yazbek-Júnior, Paulo; Yutiyama, Daniela; Silva, Fabiola Jomar da; Matheus, Denise; Mastrocolla, Luiz Eduardo; Massad, Eduardo

2017-11-01

To compare responses to a cardiopulmonary exercise test on land versus on an underwater treadmill, to assess the cardiorespiratory performance of coronary artery disease patients while immersed in warm water and to compare with the performance of healthy individuals. The sample population consisted of 40 subjects, which included 20 coronary artery disease patients aged 63.7±8.89 years old, functional class I and II, according to the New York Hearth Association, and 20 healthy subjects aged 64.7±7.09 years old. The statistical significances were calculated through an ANOVA test with a (1 - β) power of 0.861. ClinicalTrials.gov: NCT00989248 (22). Significant differences were uncovered in coronary artery disease group regarding the variables heart beats (HB), (p>0.01), oxygen consumption (VO2), (p>0.01) and carbon dioxide production (VCO2) (p<0.01). Also, for the same group, in relation to the environment, water versus on land for HB, VO2, VCO2 and oxygen for each heart beat (VO2/HB) all of than (p<0.01). The stages for data collected featured the subject's performance throughout the experiment, and within the given context, variables rating of perceived exertion (RPE), HB, VO2, VCO2 and VO2/HB (p<0.01) showed significant interactions between test stages and environment. Additionally, there was a significant interaction between the etiology and the test stages for the variables HB, VO2 and VCO2 (p<0.01). Electrocardiographic changes compatible with myocardial ischemia or arrhythmia were not observed. The subjects exhibited lower scores on Borg's perceived exertion scale in the water than at every one of the test stages on land (p<0.01). This study show that a cardiopulmonary exercise test can be safely conducted in subjects in immersion and that the procedures, resources and equipment used yielded replicable and reliable data. Significant differences observed in water versus on land allow us to conclude that coronary artery disease patients are able to do physical exercise in water and that the physiological effects of immersion do not present any risk for such patients, as exercise was well tolerated by all subjects.

Tracking the insulator-to-metal phase transition in VO 2 with few-femtosecond extreme UV transient absorption spectroscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jager, Marieke F.; Ott, Christian; Kraus, Peter M.

We present coulomb correlations can manifest in exotic properties in solids, but how these properties can be accessed and ultimately manipulated in real time is not well understood. The insulator-to-metal phase transition in vanadium dioxide (VO 2) is a canonical example of such correlations. Here, few-femtosecond extreme UV transient absorption spectroscopy (FXTAS) at the vanadium M 2,3 edge is used to track the insulator-to-metal phase transition in VO 2 . This technique allows observation of the bulk material in real time, follows the photoexcitation process in both the insulating and metallic phases, probes the subsequent relaxation in the metallic phase,more » and measures the phase-transition dynamics in the insulating phase. An understanding of the VO 2 absorption spectrum in the extreme UV is developed using atomic cluster model calculations, revealing V 3+/d 2 character of the vanadium center. We find that the insulator-to-metal phase transition occurs on a timescale of 26 ± 6 fs and leaves the system in a long-lived excited state of the metallic phase, driven by a change in orbital occupation. Potential interpretations based on electronic screening effects and lattice dynamics are discussed. A Mott–Hubbard-type mechanism is favored, as the observed timescales and d 2 nature of the vanadium metal centers are inconsistent with a Peierls driving force. In conclusion, the findings provide a combined experimental and theoretical roadmap for using time-resolved extreme UV spectroscopy to investigate nonequilibrium dynamics in strongly correlated materials.« less

Tracking the insulator-to-metal phase transition in VO2 with few-femtosecond extreme UV transient absorption spectroscopy

PubMed Central

Jager, Marieke F.; Ott, Christian; Kraus, Peter M.; Kaplan, Christopher J.; Pouse, Winston; Marvel, Robert E.; Haglund, Richard F.; Neumark, Daniel M.; Leone, Stephen R.

2017-01-01

Coulomb correlations can manifest in exotic properties in solids, but how these properties can be accessed and ultimately manipulated in real time is not well understood. The insulator-to-metal phase transition in vanadium dioxide (VO2) is a canonical example of such correlations. Here, few-femtosecond extreme UV transient absorption spectroscopy (FXTAS) at the vanadium M2,3 edge is used to track the insulator-to-metal phase transition in VO2. This technique allows observation of the bulk material in real time, follows the photoexcitation process in both the insulating and metallic phases, probes the subsequent relaxation in the metallic phase, and measures the phase-transition dynamics in the insulating phase. An understanding of the VO2 absorption spectrum in the extreme UV is developed using atomic cluster model calculations, revealing V3+/d2 character of the vanadium center. We find that the insulator-to-metal phase transition occurs on a timescale of 26 ± 6 fs and leaves the system in a long-lived excited state of the metallic phase, driven by a change in orbital occupation. Potential interpretations based on electronic screening effects and lattice dynamics are discussed. A Mott–Hubbard-type mechanism is favored, as the observed timescales and d2 nature of the vanadium metal centers are inconsistent with a Peierls driving force. The findings provide a combined experimental and theoretical roadmap for using time-resolved extreme UV spectroscopy to investigate nonequilibrium dynamics in strongly correlated materials. PMID:28827356

Tracking the insulator-to-metal phase transition in VO 2 with few-femtosecond extreme UV transient absorption spectroscopy

DOE PAGES

Jager, Marieke F.; Ott, Christian; Kraus, Peter M.; ...

2017-08-21

We present coulomb correlations can manifest in exotic properties in solids, but how these properties can be accessed and ultimately manipulated in real time is not well understood. The insulator-to-metal phase transition in vanadium dioxide (VO 2) is a canonical example of such correlations. Here, few-femtosecond extreme UV transient absorption spectroscopy (FXTAS) at the vanadium M 2,3 edge is used to track the insulator-to-metal phase transition in VO 2 . This technique allows observation of the bulk material in real time, follows the photoexcitation process in both the insulating and metallic phases, probes the subsequent relaxation in the metallic phase,more » and measures the phase-transition dynamics in the insulating phase. An understanding of the VO 2 absorption spectrum in the extreme UV is developed using atomic cluster model calculations, revealing V 3+/d 2 character of the vanadium center. We find that the insulator-to-metal phase transition occurs on a timescale of 26 ± 6 fs and leaves the system in a long-lived excited state of the metallic phase, driven by a change in orbital occupation. Potential interpretations based on electronic screening effects and lattice dynamics are discussed. A Mott–Hubbard-type mechanism is favored, as the observed timescales and d 2 nature of the vanadium metal centers are inconsistent with a Peierls driving force. In conclusion, the findings provide a combined experimental and theoretical roadmap for using time-resolved extreme UV spectroscopy to investigate nonequilibrium dynamics in strongly correlated materials.« less

Silicon-on-Insulator Pin Diodes.

DTIC Science & Technology

1987-12-01

Thin (0.5 Micron) Silicon-on-Oxidized Silicon Fig. 2.8 SEM Photographs of CVD Silicon Dioxide on Aluminum 28 After 1500 0 C Anneal in Oxygen...silicon nitride over the silicon dioxide encapsu- -9- lation layer and by depositing the silicon dioxide with a plasma CVD process which uses N20 as...relief via thermal expansion matching varies lin- -27- A B Figure 2.8: SEM Photographs of CVD Silicon Dioxide on Aluminum after 15000 C Anneal in Oxygen

All-optical short pulse translation through cross-phase modulation in a VO₂ thin film.

PubMed

Fardad, Shima; Das, Susobhan; Salandrino, Alessandro; Breckenfeld, Eric; Kim, Heungsoo; Wu, Judy; Hui, Rongqing

2016-01-15

VO2 is a promising material for reconfigurable photonic devices due to the ultrafast changes in electronic and optical properties associated with its dielectric-to-metal phase transition. Based on a fiber-optic, pump-probe setup at 1550 nm wavelength window, and by varying the pump-pulse duration, we show that the material phase transition is primarily caused by the pump-pulse energy. For the first time, we demonstrate that the instantaneous optical phase modulation of probe during pump leading edge can be utilized to create short optical pulses at probe wavelength, through optical frequency discrimination. This circumvents the impact of long recovery time well known for the phase transition of VO2.

Dynamically Babinet-invertible metasurface: a capacitive-inductive reconfigurable filter for terahertz waves using vanadium-dioxide metal-insulator transition

NASA Astrophysics Data System (ADS)

Urade, Yoshiro; Nakata, Yosuke; Okimura, Kunio; Nakanishi, Toshihiro; Miyamaru, Fumiaki; Takeda, Mitsuo W.; Kitano, Masao

2016-03-01

This paper proposes a reconfigurable planar metamaterial that can be switched between capacitive and inductive responses using local changes in the electrical conductivity of its constituent material. The proposed device is based on Babinet's principle and exploits the singular electromagnetic responses of metallic checkerboard structures, which are dependent on the local electrical conductivity. Utilizing the heating-induced metal-insulator transition of vanadium dioxide ($\\mathrm{VO}_2$), the proposed metamaterial is designed to compensate for the effect of the substrate and is experimentally characterized in the terahertz regime. This reconfigurable metamaterial can be utilized as a switchable filter and as a switchable phase shifter for terahertz waves.

Dynamically Babinet-invertible metasurface: a capacitive-inductive reconfigurable filter for terahertz waves using vanadium-dioxide metal-insulator transition.

PubMed

Urade, Yoshiro; Nakata, Yosuke; Okimura, Kunio; Nakanishi, Toshihiro; Miyamaru, Fumiaki; Takeda, Mitsuo W; Kitano, Masao

2016-03-07

This paper proposes a reconfigurable planar metamaterial that can be switched between capacitive and inductive responses using local changes in the electrical conductivity of its constituent material. The proposed device is based on Babinet's principle and exploits the singular electromagnetic responses of metallic checkerboard structures, which are dependent on the local electrical conductivity. Utilizing the heating-induced metal-insulator transition of vanadium dioxide (VO 2 ), the proposed meta-material is designed to compensate for the effect of the substrate and is experimentally characterized in the terahertz regime. This reconfigurable metamaterial can be utilized as a switchable filter and as a switchable phase shifter for terahertz waves.

Photocatalytic generation of hydrogen by core-shell WO3/BiVO4 nanorods with ultimate water splitting efficiency

PubMed Central

Pihosh, Yuriy; Turkevych, Ivan; Mawatari, Kazuma; Uemura, Jin; Kazoe, Yutaka; Kosar, Sonya; Makita, Kikuo; Sugaya, Takeyoshi; Matsui, Takuya; Fujita, Daisuke; Tosa, Masahiro; Kondo, Michio; Kitamori, Takehiko

2015-01-01

Efficient photocatalytic water splitting requires effective generation, separation and transfer of photo-induced charge carriers that can hardly be achieved simultaneously in a single material. Here we show that the effectiveness of each process can be separately maximized in a nanostructured heterojunction with extremely thin absorber layer. We demonstrate this concept on WO3/BiVO4+CoPi core-shell nanostructured photoanode that achieves near theoretical water splitting efficiency. BiVO4 is characterized by a high recombination rate of photogenerated carriers that have much shorter diffusion length than the thickness required for sufficient light absorption. This issue can be resolved by the combination of BiVO4 with more conductive WO3 nanorods in a form of core-shell heterojunction, where the BiVO4 absorber layer is thinner than the carrier diffusion length while it’s optical thickness is reestablished by light trapping in high aspect ratio nanostructures. Our photoanode demonstrates ultimate water splitting photocurrent of 6.72 mA cm−2 under 1 sun illumination at 1.23 VRHE that corresponds to ~90% of the theoretically possible value for BiVO4. We also demonstrate a self-biased operation of the photoanode in tandem with a double-junction GaAs/InGaAsP photovoltaic cell with stable water splitting photocurrent of 6.56 mA cm−2 that corresponds to the solar to hydrogen generation efficiency of 8.1%. PMID:26053164

Photocatalytic generation of hydrogen by core-shell WO3/BiVO4 nanorods with ultimate water splitting efficiency

NASA Astrophysics Data System (ADS)

Pihosh, Yuriy; Turkevych, Ivan; Mawatari, Kazuma; Uemura, Jin; Kazoe, Yutaka; Kosar, Sonya; Makita, Kikuo; Sugaya, Takeyoshi; Matsui, Takuya; Fujita, Daisuke; Tosa, Masahiro; Kondo, Michio; Kitamori, Takehiko

2015-06-01

Efficient photocatalytic water splitting requires effective generation, separation and transfer of photo-induced charge carriers that can hardly be achieved simultaneously in a single material. Here we show that the effectiveness of each process can be separately maximized in a nanostructured heterojunction with extremely thin absorber layer. We demonstrate this concept on WO3/BiVO4+CoPi core-shell nanostructured photoanode that achieves near theoretical water splitting efficiency. BiVO4 is characterized by a high recombination rate of photogenerated carriers that have much shorter diffusion length than the thickness required for sufficient light absorption. This issue can be resolved by the combination of BiVO4 with more conductive WO3 nanorods in a form of core-shell heterojunction, where the BiVO4 absorber layer is thinner than the carrier diffusion length while it’s optical thickness is reestablished by light trapping in high aspect ratio nanostructures. Our photoanode demonstrates ultimate water splitting photocurrent of 6.72 mA cm-2 under 1 sun illumination at 1.23 VRHE that corresponds to ~90% of the theoretically possible value for BiVO4. We also demonstrate a self-biased operation of the photoanode in tandem with a double-junction GaAs/InGaAsP photovoltaic cell with stable water splitting photocurrent of 6.56 mA cm-2 that corresponds to the solar to hydrogen generation efficiency of 8.1%.

The phase transition in VO 2 probed using x-ray, visible and infrared radiations

DOE PAGES

Kumar, Suhas; Strachan, John Paul; Kilcoyne, A. L. David; ...

2016-02-15

Vanadium dioxide (VO 2) is a model system that has been used to understand closely occurring multiband electronic (Mott) and structural (Peierls) transitions for over half a century due to continued scientific and technological interests. Among the many techniques used to study VO 2, the most frequently used involve electromagnetic radiation as a probe. Understanding of the distinct physical information provided by different probing radiations is incomplete, mostly owing to the complicated nature of the phase transitions. Here, we use transmission of spatially averaged infrared (λ = 1.5 μm) and visible (λ = 500 nm) radiations followed by spectroscopy andmore » nanoscale imaging using x-rays (λ = 2.25–2.38 nm) to probe the same VO 2 sample while controlling the ambient temperature across its hysteretic phase transitions and monitoring its electrical resistance. We directly observed nanoscale puddles of distinct electronic and structural compositions during the transition. The two main results are that, during both heating and cooling, the transition of infrared and visible transmission occurs at significantly lower temperatures than the Mott transition, and the electronic (Mott) transition occurs before the structural (Peierls) transition in temperature. We use our data to provide insights into possible microphysical origins of the different transition characteristics. We highlight that it is important to understand these effects because small changes in the nature of the probe can yield quantitatively, and even qualitatively, different results when applied to a non-trivial multiband phase transition. Our results guide more judicious use of probe type and interpretation of the resulting data.« less

Oriented conductive oxide electrodes on SiO2/Si and glass

DOEpatents

Jia, Quanxi; Arendt, Paul N.

2001-01-01

A thin film structure is provided including a silicon substrate with a layer of silicon dioxide on a surface thereof, and a layer of cubic oxide material deposited upon the layer of silicon dioxide by ion-beam-assisted-deposition, said layer of cubic oxide material characterized as biaxially oriented. Preferably, the cubic oxide material is yttria-stabilized zirconia. Additional thin layers of biaxially oriented ruthenium oxide or lanthanum strontium cobalt oxide are deposited upon the layer of yttria-stabilized zirconia. An intermediate layer of cerium oxide is employed between the yttria-stabilized zirconia layer and the lanthanum strontium cobalt oxide layer. Also, a layer of barium strontium titanium oxide can be upon the layer of biaxially oriented ruthenium oxide or lanthanum strontium cobalt oxide. Also, a method of forming such thin film structures, including a low temperature deposition of a layer of a biaxially oriented cubic oxide material upon the silicon dioxide surface of a silicon dioxide/silicon substrate is provided.

Cardiopulmonary exercise testing and prognosis in heart failure due to systolic left ventricular dysfunction: a validation study of the European Society of Cardiology Guidelines and Recommendations (2008) and further developments.

PubMed

Corrà, Ugo; Giordano, Andrea; Mezzani, Alessandro; Gnemmi, Marco; Pistono, Massimo; Caruso, Roberto; Giannuzzi, Pantaleo

2012-02-01

The study aims were to validate the cardiopulmonary exercise testing (CPET) parameters recommended by the European Society of Cardiology 2008 Guidelines for risk assessment in heart failure (HF) (ESC-predictors) and to verify the predictive role of 11 supplementary CPET (S-predictors) parameters. We followed 749 HF patients for cardiovascular death and urgent heart transplantation for 3 years: 139 (19%) patients had cardiac events. ESC-predictors - peak oxygen consumption (VO(2)), slope of minute ventilation vs carbon dioxide production (VE/VCO(2)) and exertional oscillatory ventilation - were all related to outcome at univariate and multivariable analysis. The ESC/2008 prototype based on ESC-predictors presented a Harrell's C concordance index of 0.725, with a likely χ2 of 98.31. S-predictors - predicted peak VO(2), peak oxygen pulse, peak respiratory exchange ratio, peak circulatory power, peak VE/VCO(2), VE/VCO(2) slope normalized by peak VO(2), VO(2) efficiency slope, ventilatory anaerobic threshold detection, peak end-tidal CO(2) partial pressure, peak heart rate, and peak systolic arterial blood pressure (SBP) - were all linked to outcome at univariate analysis. When individually added to the ESC/2008 prototype, only peak SBP and peak O(2) pulse significantly improved the model discrimination ability: the ESC + peak SBP prototype had a Harrell's C index 0.750 and reached the highest likely χ2 (127.16, p < 0.0001). We evaluated the longest list of CPET prognostic parameters yet studied in HF: ESC-predictors were independent predictors of cardiovascular events, and the ESC prototype showed a convincing predictive capacity, whereas none of 11 S-predictors enhanced the prognostic performance, except peak SBP.

Self Assembly and Properties of C:WO3 Nano-Platelets and C:VO2/V2O5 Triangular Capsules Produced by Laser Solution Photolysis

PubMed Central

2010-01-01

Laser photolysis of WCl6 in ethanol and a specific mixture of V2O5 and VCl3 in ethanol lead to carbon modified vanadium and tungsten oxides with interesting properties. The presence of graphene’s aromatic rings (from the vibrational frequency of 1,600 cm−1) together with C–C bonding of carbon (from the Raman shift of 1,124 cm−1) present unique optical, vibrational, electronic and structural properties of the intended tungsten trioxide and vanadium dioxide materials. The morphology of these samples shows nano-platelets in WOx samples and, in VOx samples, encapsulated spherical quantum dots in conjunction with fullerenes of VOx. Conductivity studies revealed that the VO2/V2O5 nanostructures are more sensitive to Cl than to the presence of ethanol, whereas the C:WO3 nano-platelets are more sensitive to ethanol than atomic C. PMID:20671779

Optoelectronic and all-optical multiple memory states in vanadium dioxide

NASA Astrophysics Data System (ADS)

Coy, Horacio; Cabrera, Rafmag; Sepúlveda, Nelson; Fernández, Félix E.

2010-12-01

Vanadium dioxide exhibits a well-known insulator-to-metal transition during which several of its physical properties change significantly. A hysteresis loop develops for each of them as the material is heated and then cooled through the transition. In this work VO2/SiO2 samples were maintained—by heat sinking—at a selected temperature within the heating branch of the hysteresis loops for resistance and near-infrared transmittance, while brief thermal excursions of the VO2 film were caused by either voltage pulses applied to the film or laser light pulses irradiating the film. These pulses had durations from milliseconds to a few seconds and the resulting drops in resistance or transmittance were easily and repeatably measurable without appreciably affecting their new values. A sequence of equal-duration pulses (for either equal-voltage or equal-irradiation pulses) caused the resistance and infrared transmittance to continue to drop, each time by a smaller amount, and larger energy pulses were required in order to cause drops comparable with the initial one. The ability of the film to change the values of the measurands in this manner with additional pulses was maintained up to a limit defined by the outer hysteresis curve for the measurand in question. The results presented show that a plurality of memory "states" in VO2 can be established or "written" either by voltage pulses or by light pulses applied to the material, and queried or "read" by resistance or transmittance readings, or both. These states were found to remain stable for at least several hours, as long as temperature was kept constant, and are expected to persist indefinitely under this condition. In the all-optical case, if the same light beam is used for writing and reading the memory state, the device is an optical analog of a memristor.

Ferroelectric behavior and reproducible Bi-stable resistance switching property in K-doped ZnO thin films as candidate for application in non-volatile memories

NASA Astrophysics Data System (ADS)

Lee, J. W.; Subramaniam, N. G.; Kang, T. W.; Shon, Yoon; Kim, E. K.

2015-05-01

Potassium-doped ZnO thin films electrodeposited on indium tin oxide (ITO) coated glass substrates exhibited ferroelectric behavior with a remnant polarization of 0.2 μC/cm2. Especially, wave forms showing the applied input voltage Vi and output voltage Vo were obtained for Al/ZnO:K/ITO structure. It exhibits a superposition of Vi (input) and Vo (output) signal from Al/ZnO:K/ITO structure with a clear phase shift between the two wave forms which again confirms that the observed ferroelectric hysteresis curve is not related to leaky dielectric materials. The current-voltage characteristics of Al/ZnO:K/ITO structures measured for several cycles revealed bi-stable switching characteristics. The reproducible bi-stable switching characteristics for the mentioned structures had good retention in one particular resistance state. Around one order of switching was realized between low and high resistance states. The switching property thought to be polarization induced originating out from the ferroelectric properties of the potassium doped ZnO thin film. The switching between ZnO:K/ITO interface is assumed to be critical for stability in switching for several cycles. Possible application of this structure in non-volatile memories is explored.

Titanium dioxide thin films by atomic layer deposition: a review

NASA Astrophysics Data System (ADS)

Niemelä, Janne-Petteri; Marin, Giovanni; Karppinen, Maarit

2017-09-01

Within its rich phase diagram titanium dioxide is a truly multifunctional material with a property palette that has been shown to span from dielectric to transparent-conducting characteristics, in addition to the well-known catalytic properties. At the same time down-scaling of microelectronic devices has led to an explosive growth in research on atomic layer deposition (ALD) of a wide variety of frontier thin-film materials, among which TiO2 is one of the most popular ones. In this topical review we summarize the advances in research of ALD of titanium dioxide starting from the chemistries of the over 50 different deposition routes developed for TiO2 and the resultant structural characteristics of the films. We then continue with the doped ALD-TiO2 thin films from the perspective of dielectric, transparent-conductor and photocatalytic applications. Moreover, in order to cover the latest trends in the research field, both the variously constructed TiO2 nanostructures enabled by ALD and the Ti-based hybrid inorganic-organic films grown by the emerging ALD/MLD (combined atomic/molecular layer deposition) technique are discussed.

Orbital electronic occupation effect on metal-insulator transition in Ti x V1-x O2.

PubMed

Huang, Kang; Meng, Yifan; Xu, XiaoFeng; Chen, Pingping; Lu, Aijiang; Li, Hui; Wu, Binhe; Wang, Chunrui; Chen, Xiaoshuang

2017-09-06

A series of Ti x V 1-x O 2 (0%  ⩽  x  ⩽  4.48%) thin films on c-plane sapphire substrates have been fabricated by co-sputtering oxidation solutions, and the metal-insulator transition temperature (T MIT ) of Ti x V 1-x O 2 films rises monotonically at the rate of 1.64 K/at.% Ti. The x-ray diffraction measurement results show that, after Ti 4+ ion doping, the rutile structure expands along the c r axis while shrinking along the a r and b r axis simultaneously. It makes the V-O bond length shorter, which is believed to upshift the π * orbitals. The rising of π * orbitals in Ti-doped VO 2 has been illustrated by ultraviolet-infrared spectroscopy and first-principles calculation. With the Ti 4+ ion doping concentration increasing, the energy levels of π * orbitals are elevated and the electronic occupation of π * orbitals decreases, which weakens the shielding for the strong electron-electron correlations in the d || orbital and result in the T MIT rising. The research reveals that the T MIT of VO 2 can be effected by the electronic occupancy of π * orbitals in a rutile state, which is helpful for developing VO 2 -based thermal devices.

Measuring energy expenditure in the intensive care unit: a comparison of indirect calorimetry by E-sCOVX and Quark RMR with Deltatrac II in mechanically ventilated critically ill patients.

PubMed

Rehal, Martin Sundström; Fiskaare, Erik; Tjäder, Inga; Norberg, Åke; Rooyackers, Olav; Wernerman, Jan

2016-03-05

Indirect calorimetry allows the determination of energy expenditure in critically ill patients by measuring oxygen consumption (VO2) and carbon dioxide production (VCO2). Recent studies have demonstrated variable performance of "breath-by-breath" instruments compared to mixing chamber technology. The aim of this study was to validate two modern devices (E-sCOVX and Quark RMR) against a reference method (Deltatrac II). Measurements of VO2/VCO2 with the test and reference devices were performed simultaneously over a 20-min period in mechanically ventilated adult intensive care unit patients. Accuracy and precision of instruments were analyzed using Bland-Altman plots. Forty-eight measurements in 22 patients were included for analysis. Both E-sCOVX and Quark RMR overestimated VO2 and VCO2 compared to Deltatrac II, corresponding to a 10% higher mean resting energy expenditure. Limits of agreement of resting energy expenditure within ± 2 standard deviations were ± 461 kcal/24 h (± 21% expressed as percentage error) for ΔE-sCOVX-Deltatrac II and ± 465 kcal/24 h (± 22%) for ΔQuark RMR-Deltatrac II. Both test devices overestimate VO2 and VCO2 compared to Deltatrac II. The observed limits of agreement are comparable to those commonly accepted in evaluations of circulatory monitoring, and significantly less than results from predictive equations. We hypothesize that the discrepancy between methods is due to patient/ventilator-related factors that affect the synchronization of gas and spirometry waveforms. Australian New Zealand Clinical Trials Registry, Trial ID ACTRN12615000205538. Date registered 3 March 2015.

Nanostructured Gd3+-TiO2 surfaces for self-cleaning application

NASA Astrophysics Data System (ADS)

Saif, M.; El-Molla, S. A.; Aboul-Fotouh, S. M. K.; Ibrahim, M. M.; Ismail, L. F. M.; Dahn, Douglas C.

2014-06-01

Preparation of self-cleaning surfaces based on lanthanide modified titanium dioxide nanoparticles has rarely been reported. In the present work, gadolinium doped titanium dioxide thin films (x mol Gd3+-TiO2 where x = 0.000, 0.005, 0.008, 0.010, 0.020 and 0.030 mol) were synthesized by sol-gel method and deposited using doctor-blade method. These films were characterized by studying their structural, optical and electrical properties. Doping with gadolinium decreases the band gap energy and increase conductivity of thin films. The photo self-cleaning activity in term of quantitative determination of the active oxidative species (rad OH) produced on the thin film surfaces was evaluated using fluorescent probe method. The results show that, the highly active thin film is the 0.020 Gd3+-TiO2. The structural, morphology, optical, electrical and photoactivity properties of Gd3+-TiO2 thin films make it promising surfaces for self-cleaning application. Mineralization of commercial textile dye (Remazol Red RB-133, RR) and durability using 0.020Gd3+-TiO2 film surface was studied.

Reproducibility of the exponential rise technique of CO(2) rebreathing for measuring P(v)CO(2) and C(v)CO(2 )to non-invasively estimate cardiac output during incremental, maximal treadmill exercise.

PubMed

Cade, W Todd; Nabar, Sharmila R; Keyser, Randall E

2004-05-01

The purpose of this study was to determine the reproducibility of the indirect Fick method for the measurement of mixed venous carbon dioxide partial pressure (P(v)CO(2)) and venous carbon dioxide content (C(v)CO(2)) for estimation of cardiac output (Q(c)), using the exponential rise method of carbon dioxide rebreathing, during non-steady-state treadmill exercise. Ten healthy participants (eight female and two male) performed three incremental, maximal exercise treadmill tests to exhaustion within 1 week. Non-invasive Q(c) measurements were evaluated at rest, during each 3-min stage, and at peak exercise, across three identical treadmill tests, using the exponential rise technique for measuring mixed venous PCO(2) and CCO(2) and estimating venous-arterio carbon dioxide content difference (C(v-a)CO(2)). Measurements were divided into measured or estimated variables [heart rate (HR), oxygen consumption (VO(2)), volume of expired carbon dioxide (VCO(2)), end-tidal carbon dioxide (P(ET)CO(2)), arterial carbon dioxide partial pressure (P(a)CO(2)), venous carbon dioxide partial pressure ( P(v)CO(2)), and C(v-a)CO(2)] and cardiorespiratory variables derived from the measured variables [Q(c), stroke volume (V(s)), and arteriovenous oxygen difference ( C(a-v)O(2))]. In general, the derived cardiorespiratory variables demonstrated acceptable (R=0.61) to high (R>0.80) reproducibility, especially at higher intensities and peak exercise. Measured variables, excluding P(a)CO(2) and C(v-a)CO(2), also demonstrated acceptable (R=0.6 to 0.79) to high reliability. The current study demonstrated acceptable to high reproducibility of the exponential rise indirect Fick method in measurement of mixed venous PCO(2) and CCO(2) for estimation of Q(c) during incremental treadmill exercise testing, especially at high-intensity and peak exercise.

Resting right ventricular function is associated with exercise performance in PAH, but not in CTEPH.

PubMed

Rehman, Michaela Beatrice; Howard, Luke S; Christiaens, Luc P; Gill, Dipender; Gibbs, J Simon R; Nihoyannopoulos, Petros

2018-02-01

To assess whether resting right ventricular (RV) function assessed by Global RV longitudinal strain (RVLS) and RV fractional area change (FAC) is associated with exercise performance in pulmonary arterial hypertension (PAH) and in chronic thromboembolic pulmonary hypertension (CTEPH). We prospectively recruited 46 consecutive patients with PAH and 42 patients with CTEPH who were referred for cardio-pulmonary exercise testing (CPET) and transthoracic echocardiography. Resting RV systolic function was assessed with RVLS and FAC. CPET parameters analyzed were percentage of predicted maximal oxygen consumption (VO2max) and the slope of ventilation against carbon dioxide production (VE/VCO2). Spearman correlation was performed between echocardiographic measurements and CPET measurements. In PAH, spearman correlation found an association between RVLS and VE/VCO2 (coefficient = 0.556, P < 0.001) and percentage predicted VO2max (coefficient = -0.393, P = 0.007), while FAC was associated with VE/VCO2 (coefficient = -0.481, P = 0.001) and percentage of predicted VO2max (coefficient = 0.356, P = 0.015). Conversely, in CTEPH, resting RV function was neither associated with percentage of predicted VO2max nor with VE/VCO2, whether assessed by RVLS or FAC. In PAH, resting RV function as assessed by FAC or RVLS is associated with exercise performance and could therefore make a significant contribution to non-invasive assessment in PAH patients. This association is not found in CTEPH, suggesting a disconnection between resting RV function and exercise performance, with implications for the use of exercise measurements as a prognostic marker and clinical/research endpoint in CTEPH. Published on behalf of the European Society of Cardiology. All rights reserved. © The Author 2017. For permissions, please email: journals.permissions@oup.com.

Improved metal-insulator-transition characteristics of ultrathin VO2 epitaxial films by optimized surface preparation of rutile TiO2 substrates

NASA Astrophysics Data System (ADS)

Martens, Koen; Aetukuri, Nagaphani; Jeong, Jaewoo; Samant, Mahesh G.; Parkin, Stuart S. P.

2014-02-01

Key to the growth of epitaxial, atomically thin films is the preparation of the substrates on which they are deposited. Here, we report the growth of atomically smooth, ultrathin films of VO2 (001), only ˜2 nm thick, which exhibit pronounced metal-insulator transitions, with a change in resistivity of ˜500 times, at a temperature that is close to that of films five times thicker. These films were prepared by pulsed laser deposition on single crystalline TiO2(001) substrates that were treated by dipping in acetone, HCl and HF in successive order, followed by an anneal at 700-750 °C in flowing oxygen. This pretreatment removes surface contaminants, TiO2 defects, and provides a terraced, atomically smooth surface.

Method and apparatus for stable silicon dioxide layers on silicon grown in silicon nitride ambient

NASA Technical Reports Server (NTRS)

Cohen, R. A.; Wheeler, R. K. (Inventor)

1974-01-01

A method and apparatus for thermally growing stable silicon dioxide layers on silicon is disclosed. A previously etched and baked silicon nitride tube placed in a furnace is used to grow the silicon dioxide. First, pure oxygen is allowed to flow through the tube to initially coat the inside surface of the tube with a thin layer of silicon dioxide. After the tube is coated with the thin layer of silicon dioxide, the silicon is oxidized thermally in a normal fashion. If the tube becomes contaminated, the silicon dioxide is etched off thereby exposing clean silicon nitride and then the inside of the tube is recoated with silicon dioxide. As is disclosed, the silicon nitride tube can also be used as the ambient for the pyrolytic decomposition of silane and ammonia to form thin layers of clean silicon nitride.

Polarized Raman scattering of epitaxial vanadium dioxide films with low-temperature monoclinic phase

NASA Astrophysics Data System (ADS)

Shibuya, Keisuke; Sawa, Akihito

2017-07-01

A polarized Raman scattering study was carried out on epitaxial VO2 thin films on MgF2(001) and (110) substrates to investigate the Raman symmetry and tensor elements of the phonon modes of the films in a low-temperature monoclinic phase. From the polarization angular dependence of the Raman intensity, we assigned the phonon modes at 137, 194, 310, 340, 499, 612, and 663 cm-1 to Ag symmetry and the phonon modes at 143, 262, 442, 480, 582, and 820 cm-1 to Bg symmetry. The angular-dependence measurements also revealed that two phonon modes with Ag and Bg symmetries are present at about 224 and 393 cm-1, although only a single peak was observed in the Raman spectra at around these wavenumbers. On the basis of the experimental results, we evaluated the Raman tensors of the identified phonon modes. From the Raman tensors, we found that the atomic displacements of the 194 and 340 cm-1 phonon modes are approximately perpendicular and parallel, respectively, to the V-V dimer direction. This is consistent with a previous theoretical prediction, i.e., these modes are attributable to the tilting motion and the stretching vibration of the V-V dimers, respectively.

Enhanced photoelectrochemical performance of inorganic-organic hybrid consisting of BiVO4 and PEDOT:PSS

NASA Astrophysics Data System (ADS)

Trzciński, K.; Szkoda, M.; Siuzdak, K.; Sawczak, M.; Lisowska-Oleksiak, A.

2016-12-01

The PEDOT:PSS (poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)) was electrodeposited on a thin layer of bismuth vanadate (BiVO4) prepared using the pulsed laser deposition technique onto FTO. The inorganic-organic junction was characterized by Raman spectroscopy, UV-vis spectroscopy and scanning electron microscopy. Chronoamperometry curves, recorded under simulated solar light illumination, were performed to determine generated photocurrent during water and hydroquinone oxidation at the electrode surface. Experiments were performed for three types of electrode materials: (i) FTO/BiVO4, (ii) FTO/PEDOT:PSS and (iii) FTO/BiVO4/PEDOT:PSS in aqueous electrolyte. Almost 5 times higher photocurrent in electrolyte containing hole scavenger was generated after modification of BiVO4 photoanode with electrodeposited polymer. It is noteworthy that anodic photocurrent was stable even after 4 h of illumination. Cyclic voltammetry curves of FTO/BiVO4/PEDOT:PSS recorded before and after experiments performed under electrode illumination indicated that the organic part in tested junction is photo-corrosion resistant.

Resistance noise spectroscopy across the thermally and electrically driven metal-insulator transitions in VO2 nanobeams

NASA Astrophysics Data System (ADS)

Alsaqqa, Ali; Kilcoyne, Colin; Singh, Sujay; Horrocks, Gregory; Marley, Peter; Banerjee, Sarbajit; Sambandamurthy, G.

Vanadium dioxide (VO2) is a strongly correlated material that exhibits a sharp thermally driven metal-insulator transition at Tc ~ 340 K. The transition can also be triggered by a DC voltage in the insulating phase with a threshold (Vth) behavior. The mechanisms behind these transitions are hotly discussed and resistance noise spectroscopy is a suitable tool to delineate different transport mechanisms in correlated systems. We present results from a systematic study of the low frequency (1 mHz < f < 10 Hz) noise behavior in VO2 nanobeams across the thermally and electrically driven transitions. In the thermal transition, the power spectral density (PSD) of the resistance noise is unchanged as we approach Tc from 300 K and an abrupt drop in the magnitude is seen above Tc and it remains unchanged till 400 K. However, the noise behavior in the electrically driven case is distinctly different: as the voltage is ramped from zero, the PSD gradually increases by an order of magnitude before reaching Vth and an abrupt increase is seen at Vth. The noise magnitude decreases above Vth, approaching the V = 0 value. The individual roles of percolation, Joule heating and signatures of correlated behavior will be discussed. This work is supported by NSF DMR 0847324.

Haemoglobin saturation during incremental arm and leg exercise.

PubMed Central

Powers, S. K.; Dodd, S.; Woodyard, J.; Beadle, R. E.; Church, G.

1984-01-01

There are few reports concerning the alterations in the percent of haemoglobin saturated with oxygen (%SO2) during non-steady state incremental exercise. Further, no data exist to describe the %SO2 changes during arm exercise. Therefore, the purpose of this study was made to assess the dynamic changes in %SO2 during incremental arm and leg work. Nine trained subjects (7 males and 2 females) performed incremental arm and leg exercise to exhaustion on an arm crank ergometer and a cycle ergometer, respectively. Ventilation and gas exchange measurements were obtained minute by minute via open circuit spirometry and changes in %SO2 were recorded via an ear oximeter. No significant difference (p greater than 0.05) existed between arm and leg work in end-tidal oxygen (PETO2), end-tidal carbon dioxide (PETCO2), or %SO2 when compared as a function of percent VO2 max. These results provide evidence that arterial O2 desaturation occurs in a similar fashion in both incremental arm and leg work with the greatest changes in %SO2 occurring at work rates greater than 70% VO2 max. PMID:6435715

Effects of exercise position on the ventilatory responses to exercise in chronic heart failure.

PubMed

Armour, W; Clark, A L; McCann, G P; Hillis, W S

1998-09-01

Patients with heart failure frequently complain of orthopnoea. The objective was to assess the ventilatory response of patients with chronic heart failure during erect and supine exercise. Maximal incremental exercise testing with metabolic gas exchange measurements in erect and supine positions conducted in random order. Tertiary referral centre for cardiology. Nine patients with heart failure (aged 61.9+/-6.1 years) and 10 age matched controls (63.8+/-4.6). Metabolic gas exchange measurements. The slope of the relation between ventilation and carbon dioxide production. Ratings of perceived breathlessness during exercise. Oxygen consumption (VO2) and ventilation were higher during erect exercise at each stage in each group. Peak VO2 was [mean (SD)] 17.12 ml/kg/min (4.07) erect vs 12.92 (3.61) supine in the patients (P<0.01) and 22.62 (5.03) erect-supine vs 19.16 (3.78) erect (P<0.01) in the controls. Ratings of perceived exertion were higher in the patients at each stage, but unaffected by posture. There was no difference in the slope of the relation between ventilation and carbon dioxide production between erect and supine exercise 36.39 (6.12) erect vs 38.42 (8.89) supine for patients; 30.05 (4.52) vs 28.80 (3.96) for controls. In this group of patients during exercise, there was no change in the perception of breathlessness, nor the ventilatory response to carbon dioxide production with change in posture, although peak ventilation was greater in the erect position. The sensation of breathlessness may be related to the appropriateness of the ventilatory response to exertion rather than to the absolute ventilation.

Impact of anaemia on lung function and exercise capacity in patients with stable severe chronic obstructive pulmonary disease.

PubMed

Guo, Jian; Zheng, Cong; Xiao, Qiang; Gong, Sugang; Zhao, Qinhua; Wang, Lan; He, Jing; Yang, Wenlan; Shi, Xue; Sun, Xingguo; Liu, Jinming

2015-10-08

This study intended to search for potential correlations between anaemia in patients with severe chronic obstructive pulmonary disease (COPD; GOLD stage III) and pulmonary function at rest, exercise capacity as well as ventilatory efficiency, using pulmonary function test (PFT) and cardiopulmonary exercise testing (CPET). The study was undertaken at Shanghai Pulmonary Hospital, a tertiary-level centre affiliated to Tongji University. It caters to a large population base within Shanghai and referrals from centres in other cities as well. 157 Chinese patients with stable severe COPD were divided into 2 groups: the anaemia group (haemoglobin (Hb) <12.0 g/dL for males, and <11 g/dL for females (n=48)) and the non-anaemia group (n=109). Arterial blood gas, PFT and CPET were tested in all patients. (1) Diffusing capacity for carbon monoxide (DLCO) corrected by Hb was significantly lower in the anaemia group ((15.3±1.9) mL/min/mm Hg) than in the non-anaemia group ((17.1±2.1) mL/min/mm Hg) (p<0.05). A significant difference did not exist in the level of forced expiratory volume in 1 s (FEV1), FEV1%pred, FEV1/forced vital capacity (FVC), inspiratory capacity (IC), residual volume (RV), total lung capacity (TLC) and RV/TLC (p>0.05). (2) Peak Load, Peak oxygen uptake (VO2), Peak VO2%pred, Peak VO2/kg, Peak O2 pulse and the ratio of VO2 increase to WR increase (ΔVO2/ΔWR) were significantly lower in the anaemia group (p<0.05); however, Peak minute ventilation (VE), Lowest VE/carbon dioxide output (VCO2) and Peak dead space/tidal volume ratio (VD/VT) were similar between the 2 groups (p>0.05). (3) A strong positive correlation was found between Hb concentration and Peak VO2 in patients with anaemia (r=0.702, p<0.01). Anaemia has a negative impact on gas exchange and exercise tolerance during exercise in patients with severe COPD. The decrease in amplitude of Hb levels is related to the quantity of oxygen uptake. Published by the BMJ Publishing Group Limited. For permission to use (where not already granted under a licence) please go to http://group.bmj.com/group/rights-licensing/permissions.

Nanoparticle Thin Films for Gas Sensors Prepared by Matrix Assisted Pulsed Laser Evaporation

PubMed Central

Caricato, Anna Paola; Luches, Armando; Rella, Roberto

2009-01-01

The matrix assisted pulsed laser evaporation (MAPLE) technique has been used for the deposition of metal dioxide (TiO2, SnO2) nanoparticle thin films for gas sensor applications. For this purpose, colloidal metal dioxide nanoparticles were diluted in volatile solvents, the solution was frozen at the liquid nitrogen temperature and irradiated with a pulsed excimer laser. The dioxide nanoparticles were deposited on Si and Al2O3 substrates. A rather uniform distribution of TiO2 nanoparticles with an average size of about 10 nm and of SnO2 nanoparticles with an average size of about 3 nm was obtained, as demonstrated by high resolution scanning electron microscopy (SEM-FEG) inspections. Gas-sensing devices based on the resistive transduction mechanism were fabricated by depositing the nanoparticle thin films onto suitable rough alumina substrates equipped with interdigitated electrical contacts and heating elements. Electrical characterization measurements were carried out in controlled environment. The results of the gas-sensing tests towards low concentrations of ethanol and acetone vapors are reported. Typical gas sensor parameters (gas responses, response/recovery time, sensitivity, and low detection limit) towards ethanol and acetone are presented. PMID:22574039

Nanoparticle thin films for gas sensors prepared by matrix assisted pulsed laser evaporation.

PubMed

Caricato, Anna Paola; Luches, Armando; Rella, Roberto

2009-01-01

The matrix assisted pulsed laser evaporation (MAPLE) technique has been used for the deposition of metal dioxide (TiO(2), SnO(2)) nanoparticle thin films for gas sensor applications. For this purpose, colloidal metal dioxide nanoparticles were diluted in volatile solvents, the solution was frozen at the liquid nitrogen temperature and irradiated with a pulsed excimer laser. The dioxide nanoparticles were deposited on Si and Al(2)O(3) substrates. A rather uniform distribution of TiO(2) nanoparticles with an average size of about 10 nm and of SnO(2) nanoparticles with an average size of about 3 nm was obtained, as demonstrated by high resolution scanning electron microscopy (SEM-FEG) inspections. Gas-sensing devices based on the resistive transduction mechanism were fabricated by depositing the nanoparticle thin films onto suitable rough alumina substrates equipped with interdigitated electrical contacts and heating elements. Electrical characterization measurements were carried out in controlled environment. The results of the gas-sensing tests towards low concentrations of ethanol and acetone vapors are reported. Typical gas sensor parameters (gas responses, response/recovery time, sensitivity, and low detection limit) towards ethanol and acetone are presented.

The effect of endurance training on the ventilatory response to exercise in elite cyclists.

PubMed

Hoogeveen, A R

2000-05-01

The purpose of this study was to investigate the effects of endurance training on the ventilatory response to acute incremental exercise in elite cyclists. Fifteen male elite cyclists [mean (SD) age 24.3 (3.3) years, height 179 (6) cm, body mass 71.1 (7.6) kg, maximal oxygen consumption (VO2max) 69 (7) ml x min(-1) x kg(-1)] underwent two exercise tests on a cycle ergometer. The first test was assessed in December, 6 weeks before the beginning of the cycling season. The second test was performed in June, in the middle of the season. During this period the subjects were expected to be in a highly endurance-trained state. The ventilatory response was assessed during an incremental exercise test (20 W x min(-1)). Oxygen consumption (VO2), carbon dioxide production (VCO2), minute ventilation (VE), and heart rate (HR) were assessed at the following points during the test: at workloads of 200 W, 250 W, 300 W, 350 W, 400 W and at the subject's maximal workload, at a respiratory exchange ratio (R) of 1, and at the ventilatory threshold (Th(vent)) determined using the V-slope-method. Post-training, the mean (SD) VO2max was increased from the pre-training level of 69 (7) ml x min(-1) x kg(-1) (range 61.4-78.6) to 78 (6) ml x min(-1) x kg(-1) (range 70.5-86.3). The mean post-training VO2 was significantly higher than the pre training value (P < 0.01) at all work rates, at Th(vent) and at R = 1. VO2 was also higher at all work rates except for 200 W and 250 W. VE was significantly higher at Th(vent) and R = 1. Training had no effect on HR at all workloads examined. An explanation for the higher VO2 cost for the same work rate may be that in the endurance-trained state, the adaptation to an exercise stimulus with higher intensity is faster than for the less-trained state. Another explanation may be that at the same work rate, in the less-endurance-trained state power is generated using a significantly higher anaerobic input. The results of this study suggest the following practical recommendations for training management in elite cyclists: (1) the VO2 for a subject at the same work rate may be an indicator of the endurance-trained state (i.e., the higher the VO2, the higher the endurance-trained capacity), and (2) the need for multiple exercise tests for determining the HR at Th(vent) during a cycling season is doubtful since at Th(vent) this parameter does not differ much following endurance training.

Surface Structure and Photocatalytic Activity of Nano-TiO2 Thin Film

EPA Science Inventory

Controlled titanium dioxide (TiO2) thin films were deposited on stainless steel surfaces using flame aerosol synthetic technique, which is a one-step coating process, that doesn’t require further calcination. Solid state characterization of the coatings was conducted by different...

Engineering Electronic Properties of Strongly Correlated Metal Thin Films

NASA Astrophysics Data System (ADS)

Eaton, Craig

This dissertation reports on advances in synthesis and characterization of high quality perovskite metals with strong electron correlation. These materials have attracted considerable attention for their potential application as an active electronic material in logic applications utilizing the Mott type metal-to-insulator transition. CaVO3 and SrVO3 correlated metal oxide films have been grown by hybrid-molecular beam epitaxy (MBE), where alkaline earth cations are supplied using a conventional effusion cell and the transition metal vanadium is supplied using the metal-organic precursor vanadium (V) oxytriisopropoxide. Oxygen is available in both molecular and remote plasma activated forms. Titanate-based band insulators, namely SrTiO3 and CaTiO3, have also been grown using titanium tetra-isopropoxide as metal-organic precursor. The grown films have been characterized using reflection high energy electron diffraction (RHEED), X-ray diffraction (XRD), atomic force microscopy (AFM), transition electron microscopy (TEM), and electrical properties have been determined using temperature dependent resistivity and Hall measurements. Optimized films exhibit high quality Kiessig fringes, with substrate limited rocking curve widths of 8 arc seconds in the case of CaVO3 and 17 arc seconds in the case of SrVO3. Both vanadate films grew in a step-flow mode with atomic steps visible after growth by AFM. In SrVO3, the perovskite phase remained present with a gradual lattice expansion away from the optimal cation flux ratio. For CaVO3, the films remained phase pure and with little change in lattice parameter throughout a growth window that spanned a 30% range in cation flux ratios. While an abrupt increase of lattice parameter was found for CaVO3 films grown under Carich conditions, films grown under V-rich conditions revealed a gradual reduction in lattice parameter, in contrast to SrVO3 where all defects have been shown to increase unit cell volume. Low resistivity and high residual resistivity ration complex vanadate thin films have been demonstrated. Methods for growing minimally strained SrVO3 films on (LaAlO 3)0.3(Sr2AlTaO6)0.7 substrates (0.7% tensile) were expanded to other substrates with different lattice mismatches, namely SrTiO3 (1.8% tensile) and LaAlO3 (1.3% compressive). Varying strain modifies bond angles or overlap, and can give rise to an insulating ground state. Changes in the film surface morphology derived from atomic force microscopy (AFM) was used to discriminate optimal growth conditions on each substrate. Films grown at each strain state remain strongly metallic at 10 nm thickness. Low temperature resistivity measurements, which demonstrates a marked increase in low temperature resistivity with respect to those films grown at optimized growth parameters, were found to be substrate dependent. The thickness of films grown on SrTiO3 are optimized for maximum thickness without cracking. Use of epitaxial strain as a mechanism for enabling a Mott transition was not demonstrated at strains and conditions attempted within this study. The experimental support of this hypothesis could not be experimentally confirmed within the range of strains studied here. Finally, high quality epitaxial SrTiO3-SrVO3-SrTiO 3 heterostructures are grown on (LaAlO3)0.3(Sr 2AlTaO6)0.7 substrates by hybrid MBE. RHEED, XRD, and TEM showed that these structures are of high structural quality, with atomically and chemically abrupt interfaces. By fixing the thickness of the SrTiO3 confinement layers to be 15 nm and decreasing the thickness of the SrVO3 from 50 nm down to 1.2 nm, it has been demonstrated that the system transitions from a strongly-correlated metal to an insulating state, as shown by temperature dependent resistivity and carrier concentration measurements. For films with thickness larger than 1.2 nm, the resistivity versus temperature is described by Fermi liquid behavior. Below this critical thickness the material undergoes an electronic phase transition into a variable-range hopping insulating phase. The results of this dissertation show that high quality vanadate thin films can be grown by hybrid MBE. Their electronic ground state, metallic in the bulk phase, can be effectively changed using geometrical confinement, while epitaxial strain was found to have a negligible effect. The ability to grow CaVO3 in a self-regulated fashion holds promise that the favorable growth kinetics in hybrid MBE might be a general characteristic of the metalorganic precursor employed.

Cardiorespiratory performance of coronary artery disease patients on land versus underwater treadmill tests: a comparative study

PubMed Central

Garcia, Mauricio Koprowski; Rizzo, Limanara; Yazbek-Júnior, Paulo; Yutiyama, Daniela; da Silva, Fabiola Jomar; Matheus, Denise; Mastrocolla, Luiz Eduardo; Massad, Eduardo

2017-01-01

OBJECTIVE: To compare responses to a cardiopulmonary exercise test on land versus on an underwater treadmill, to assess the cardiorespiratory performance of coronary artery disease patients while immersed in warm water and to compare with the performance of healthy individuals. METHODS: The sample population consisted of 40 subjects, which included 20 coronary artery disease patients aged 63.7±8.89 years old, functional class I and II, according to the New York Hearth Association, and 20 healthy subjects aged 64.7±7.09 years old. The statistical significances were calculated through an ANOVA test with a (1 - β) power of 0.861. ClinicalTrials.gov: NCT00989248 (22). RESULTS: Significant differences were uncovered in coronary artery disease group regarding the variables heart beats (HB), (p>0.01), oxygen consumption (VO2), (p>0.01) and carbon dioxide production (VCO2) (p<0.01). Also, for the same group, in relation to the environment, water versus on land for HB, VO2, VCO2 and oxygen for each heart beat (VO2/HB) all of than (p<0.01). The stages for data collected featured the subject’s performance throughout the experiment, and within the given context, variables rating of perceived exertion (RPE), HB, VO2, VCO2 and VO2/HB (p<0.01) showed significant interactions between test stages and environment. Additionally, there was a significant interaction between the etiology and the test stages for the variables HB, VO2 and VCO2 (p<0.01). Electrocardiographic changes compatible with myocardial ischemia or arrhythmia were not observed. The subjects exhibited lower scores on Borg’s perceived exertion scale in the water than at every one of the test stages on land (p<0.01). CONCLUSION: This study show that a cardiopulmonary exercise test can be safely conducted in subjects in immersion and that the procedures, resources and equipment used yielded replicable and reliable data. Significant differences observed in water versus on land allow us to conclude that coronary artery disease patients are able to do physical exercise in water and that the physiological effects of immersion do not present any risk for such patients, as exercise was well tolerated by all subjects. PMID:29236912

Nanostructured vanadium oxide thin film with high TCR at room temperature for microbolometer

NASA Astrophysics Data System (ADS)

Wang, Bin; Lai, Jianjun; Li, Hui; Hu, Haoming; Chen, Sihai

2013-03-01

In order to obtain high quality of thermal sensitive material, VOx thin film of high temperature coefficient of resistance (TCR) of 6.5%/K at room temperature has been deposited by reactive ion beam sputtering and post annealing method. AFM and XRD measurements indicate that the VOx thin film with nanostructured crystalline is composed of VO2 and V2O3. The nanostructured VOx microbolometer has been designed and fabricated. The measurement of the film system with TiN absorbing layer indicates that it has about 92% infrared absorption in the range of 8-14 μm. The performance of this bolometer, comparing with that of bolometer with common VOx, has a better result. At 20 Hz frequency and 10 μA bias current, the bolometer with high TCR has reached detectivity of 1.0 × 109 cm Hz1/2/W. It also indicates that this nanostructured VOx thin film has not only a higher TCR but also a lower noise than common VOx thin film without annealing.

Low loss millimeter-wave switches based on the Vanadium Dioxide Metal - Insulator - Transition

NASA Astrophysics Data System (ADS)

Field, Mark; Hillman, Christopher; Stupar, Philip; Griffith, Zachary; Rodwell, Mark

2014-03-01

A new ultra-low-loss and broad band millimeter wave switch technology based on the reversible metal / insulator phase transition of vanadium dioxide has been developed. We report having fabricated series configured, single-pole single-throw (SPST) switches having measured S-parameters from DC to 110 GHz. The on-state insertion loss is 0.2 dB and off-state isolation is 21 dB at 50 GHz. The resulting impedance contrast ratio, ZOFF / ZON, is greater than 500:1 at 50 GHz (i.e. cut-off frequency fc ~ 40 THz). As a demonstration of the technology's utility, we also present the results of a 2-bit real time delay phase shifter incorporating a pair of VO2 SP4T switches. This switch technology's high impedance contrast ratio combined with its compactness, ease of integration, and low voltage operation make it an enabler of previously unachievable high-performance millimeter wave FPGAs.

Metal-insulator transition in CaVO3 thin films: Interplay between epitaxial strain, dimensional confinement, and surface effects

NASA Astrophysics Data System (ADS)

Beck, Sophie; Sclauzero, Gabriele; Chopra, Uday; Ederer, Claude

2018-02-01

We use density functional theory plus dynamical mean-field theory (DFT+DMFT) to study multiple control parameters for tuning the metal-insulator transition (MIT) in CaVO3 thin films. We focus on separating the effects resulting from substrate-induced epitaxial strain from those related to the reduced thickness of the film. We show that tensile epitaxial strain of around 3%-4% is sufficient to induce a transition to a paramagnetic Mott-insulating phase. This corresponds to the level of strain that could be achieved on a SrTiO3 substrate. Using free-standing slab models, we then demonstrate that reduced film thickness can also cause a MIT in CaVO3, however, only for thicknesses of less than 4 perovskite units. Our calculations indicate that the MIT in such ultrathin films results mainly from a surface-induced crystal-field splitting between the t2 g orbitals, favoring the formation of an orbitally polarized Mott insulator. This surface-induced crystal-field splitting is of the same type as the one resulting from tensile epitaxial strain, and thus the two effects can also cooperate. Furthermore, our calculations confirm an enhancement of correlation effects at the film surface, resulting in a reduced quasiparticle spectral weight in the outermost layer, whereas bulklike properties are recovered within only a few layers away from the surface.

Multi-physics transient simulation of monolithic niobium dioxide-tantalum dioxide memristor-selector structures

NASA Astrophysics Data System (ADS)

Sevic, John F.; Kobayashi, Nobuhiko P.

2017-10-01

Self-assembled niobium dioxide (NbO2) thin-film selectors self-aligned to tantalum dioxide (TaO2) memristive memory cells are studied by a multi-physics transient solution of the heat equation coupled to the nonlinear current continuity equation. While a compact model can resolve the quasi-static bulk negative differential resistance (NDR), a self-consistent coupled transport formulation provides a non-equilibrium picture of NbO2-TaO2 selector-memristor operation ab initio. By employing the drift-diffusion transport approximation, a finite element method is used to study the dynamic electrothermal behavior of our experimentally obtained selector-memristor devices, showing that existing conditions are suitable for electroformation of NbO2 selector thin-films. Both transient and steady-state simulations support our theory, suggesting that the phase change due to insulator-metal transition is responsible for NbO2 selector NDR in our as-fabricated selector-memristor devices. Simulation results further suggest that TiN nano-via may play a central role in electroforming, as its dimensions and material properties establish the mutual electrothermal interaction between TiN nano-via and the selector-memristor.

Dynamic Control of Radiative Heat Transfer with Tunable Materials for Thermal Management in Both Far and Near Fields

NASA Astrophysics Data System (ADS)

Yang, Yue

The proposed research mainly focuses on employing tunable materials to achieve dynamic control of radiative heat transfer in both far and near fields for thermal management. Vanadium dioxide (VO2), which undergoes a phase transition from insulator to metal at the temperature of 341 K, is one tunable material being applied. The other one is graphene, whose optical properties can be tuned by chemical potential through external bias or chemical doping. (Abstract shortened by ProQuest.).

Instrument development in the measurement of unsupported arm exercise endurance in normal adult subjects.

PubMed

Breslin, E H; Adams, E; Lutz, A; Roy, C

1993-06-01

Many daily activities, from basic grooming to employment tasks, require adequate unsupported arm endurance (UAE). We developed an electromechanical device to measure UAE endurance. The purpose of this study was to standardize the instrument for two rates of arm motion, moderate and slow, in 18 normal adult subjects (FEVI = 3.7L +/- .78, FVC = 4.2L +/- .74, FEV1/FVC = 1.1 +/- .08). Exercise endurance limits, and the following metabolic, ventilatory, and sensation responses were determined at rest prior to exercise and at end-exercise limits for both rates of UAE:minute ventilation (Ve), tidal volume (VT), respiratory rate (RR), duty cycle (Ti/Ttot), oxygen uptake (VO2), carbon dioxide production (VCO2), inspiratory flow (VT/Ti), heart rate (HR), and visual analog scale measurements (VAS) of dyspnea (D), respiratory effort (RE), and arm fatigue (AF). Significance increases from baseline rest were shown at the endurance limits for both rates of UAE in: VO2, VCO2, Ve, VT, RR, VT/Ti, HR, VAS-D, VAS-RE, and VAS-AF. There were no changes in Ti/Ttot and SaO2 with UAE. Peak VO2, RR, Ve, VT/Ti, and VAS-D with moderate exercise were significantly greater than slow UAE; and there was a trend increase in peak HR for moderate as opposed to slow rate UAE. Despite these differences, the endurance time between the two rates of UAE were similar. These data provide standards against which UAE in COPD can be evaluated.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Menges, F.; Spieser, M.; Riel, H.

The thermal radiative near field transport between vanadium dioxide and silicon oxide at submicron distances is expected to exhibit a strong dependence on the state of vanadium dioxide which undergoes a metal-insulator transition near room temperature. We report the measurement of near field thermal transport between a heated silicon oxide micro-sphere and a vanadium dioxide thin film on a titanium oxide (rutile) substrate. The temperatures of the 15 nm vanadium dioxide thin film varied to be below and above the metal-insulator-transition, and the sphere temperatures were varied in a range between 100 and 200 °C. The measurements were performed using a vacuum-basedmore » scanning thermal microscope with a cantilevered resistive thermal sensor. We observe a thermal conductivity per unit area between the sphere and the film with a distance dependence following a power law trend and a conductance contrast larger than 2 for the two different phase states of the film.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Guo, Peijun; Weimer, Matthew S.; Emery, Jonathan D.

Actively tunable optical transmission through artificial metamaterials holds great promise for next-generation nanophotonic devices and metasurfaces. Plasmonic nanostructures and phase change materials have been extensively studied to this end due to their respective strong interactions with light and tunable dielectric constants under external stimuli. Seamlessly integrating plasmonic components with phase change materials, as demonstrated in the present work, can facilitate phase change by plasmonically enabled light confinement and meanwhile make use of the high sensitivity of plasmon resonances to the variation of dielectric constant associated with the phase change. The hybrid platform here is composed of plasmonic indium tin-oxide nanorodmore » arrays (ITO-NRAs) conformally coated with an ultrathin layer of a prototypical phase change material, vanadium dioxide (VO2), which enables all-optical modulation of the infrared as well as the visible spectral ranges. The interplay between the intrinsic plasmonic nonlinearity of ITO-NRAs and the phase transition induced permittivity change of VO2 gives rise to spectral and temporal responses that cannot be achieved with individual material components alone.« less

X-Ray Spectroscopy of Ultra-Thin Oxide/Oxide Heteroepitaxial Films: A Case Study of Single-Nanometer VO2/TiO2.

PubMed

Quackenbush, Nicholas F; Paik, Hanjong; Woicik, Joseph C; Arena, Dario A; Schlom, Darrell G; Piper, Louis F J

2015-08-21

Epitaxial ultra-thin oxide films can support large percent level strains well beyond their bulk counterparts, thereby enabling strain-engineering in oxides that can tailor various phenomena. At these reduced dimensions (typically < 10 nm), contributions from the substrate can dwarf the signal from the epilayer, making it difficult to distinguish the properties of the epilayer from the bulk. This is especially true for oxide on oxide systems. Here, we have employed a combination of hard X-ray photoelectron spectroscopy (HAXPES) and angular soft X-ray absorption spectroscopy (XAS) to study epitaxial VO2/TiO2 (100) films ranging from 7.5 to 1 nm. We observe a low-temperature (300 K) insulating phase with evidence of vanadium-vanadium (V-V) dimers and a high-temperature (400 K) metallic phase absent of V-V dimers irrespective of film thickness. Our results confirm that the metal insulator transition can exist at atomic dimensions and that biaxial strain can still be used to control the temperature of its transition when the interfaces are atomically sharp. More generally, our case study highlights the benefits of using non-destructive XAS and HAXPES to extract out information regarding the interfacial quality of the epilayers and spectroscopic signatures associated with exotic phenomena at these dimensions.

Dynamical heat transport amplification in a far-field thermal transistor of VO{sub 2} excited with a laser of modulated intensity

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ordonez-Miranda, Jose, E-mail: jose.ordonez@cnrs.pprime.fr; Ezzahri, Younès; Drevillon, Jérémie

2016-05-28

Far-field radiative heat transport in a thermal transistor made up of a vanadium dioxide base excited with a laser of modulated intensity is analytically studied and optimized. This is done by solving the equation of energy conservation for the steady-state and modulated components of the temperature and heat fluxes that the base exchanges with the collector and emitter. The thermal bistability of VO{sub 2} is used to find an explicit condition on the laser intensity required to maximize these heat fluxes to values higher than the incident flux. For a 1 μm-thick base heated with a modulation frequency of 0.5 Hz, itmore » is shown that both the DC and AC components of the heat fluxes are about 4 times the laser intensity, while the AC temperature remains an order of magnitude smaller than the DC one at around 343 K. Higher AC heat fluxes are obtained for thinner bases and/or lower frequencies. Furthermore, we find that out of the bistability temperatures associated with the dielectric-to-metal and metal-to-dielectric transitions of VO{sub 2}, the amplification of the collector-to-base and base-to-emitter heat fluxes is still possible, but at modulation frequencies lower than 0.1 Hz.« less

Selective Metallization of Well Aligned PS-b-P2VP Block Copolymers in Thin Films and in Confined Geometries

NASA Astrophysics Data System (ADS)

Sievert, James D.; Watkins, James J.; Russell, Thomas P.

2006-03-01

Well aligned, microphase-separated structures of styrene-2-vinylpyridine block copolymers are being used as templates for macromolecule-metal nanocomposites. These composites are either prepared as thin films or confined in nanoporous aluminum oxide membranes. Under optimal conditions, templates are prepared as thin films or confined nanorods and metallized without disturbing the ordered structure. We have developed a procedure that deposits metal within the polymer using supercritical carbon dioxide-soluble metal precursors. The use of supercritical carbon dioxide allows for selective metallization of the polymer at or below the glass transition, without disrupting the morphology. In addition, similar procedures have been investigated using metal salts and acids. Using these techniques, metals and metal-sulfides including silver, gold, platinum and zinc sulfide have been selectively deposited.

Metal-Insulator crossover in SrVO3 thin film

NASA Astrophysics Data System (ADS)

Wang, Gaomin; Wang, Zhen; Saghayezhian, Mohammad; Chen, Chen; Chen, Lina; Guo, Hangwen; Zhu, Yimei; Zhang, Jiandi

Paramagnetic metallic oxide SrVO3 (SVO) represents a prototype system for the study of the mechanism behind thickness-induced metal-to-insulator transition (MIT) or crossover due to its simple structure and itinerancy. Here SrVO3 thin films with different thicknesses were obtained through the layer-by-layer growth by laser Molecular Beam Epitaxy on SrTiO3 (001) surface. Ultraviolet Photoemission Spectroscopy and Scanning Tunneling Spectroscopy measurements confirm a MIT at the thickness of 3 unit cell, while atomically resolved Scanning Transmission Electron Microscopy and Electron Energy Loss Spectroscopy analysis reveal the depletion of Sr, change of V-valence and expansion of the out-of-plane lattice constant in the first three unit cell above the interface, thus different from the rest of the films. The existence of significant amount of oxygen vacancies is proposed, which is also supported by X-ray Photoelectron Spectroscopy, therefore providing a possible explanation of MIT. This work is primarily supported by U.S. DOE under Grant No. DOE DE-SC0002136. G.W. was supported by U.S. NSF under Grant No. DMR 16088865.

Titanium dioxide thin films deposited by pulsed laser deposition and integration in radio frequency devices: Study of structure, optical and dielectric properties

NASA Astrophysics Data System (ADS)

Orlianges, Jean-Christophe; Crunteanu, Aurelian; Pothier, Arnaud; Merle-Mejean, Therese; Blondy, Pierre; Champeaux, Corinne

2012-12-01

Titanium dioxide presents a wide range of technological application possibilities due to its dielectric, electrochemical, photocatalytic and optical properties. The three TiO2 allotropic forms: anatase, rutile and brookite are also interesting, since they exhibit different properties, stabilities and growth modes. For instance, rutile has a high dielectric permittivity, of particular interest for the integration as dielectric in components such as microelectromechanical systems (MEMS) for radio frequency (RF) devices. In this study, titanium dioxide thin films are deposited by pulsed laser deposition. Characterizations by Raman spectroscopy and X-ray diffraction show the evolution of the structural properties. Thin films optical properties are investigated using spectroscopic ellipsometry and transmission measurements from UV to IR range. Co-planar waveguide (CPW) devices are fabricated based on these films. Their performances are measured in the RF domain and compared to simulation, leading to relative permittivity values in the range 30-120, showing the potentialities of the deposited material for capacitive switches applications.

Left atrial mechanics strongly predict functional capacity assessed by cardiopulmonary exercise testing in subjects without structural heart disease.

PubMed

Leite, Luís; Mendes, Sofia Lázaro; Baptista, Rui; Teixeira, Rogério; Oliveira-Santos, Manuel; Ribeiro, Nelson; Coutinho, Rosa; Monteiro, Victor; Martins, Rui; Castro, Graça; Ferreira, Maria João; Pego, Mariano

2017-05-01

Left atrium function is essential for cardiovascular performance and is evaluable by two-dimensional speckle-tracking echocardiography (2D-STE). Our aim was to determine how echocardiographic parameters interrelate with exercise capacity and ventilatory efficiency in subjects with no structural heart disease. Asymptomatic volunteers, in sinus rhythm and with normal biventricular size and function, were recruited from a community-based population. Individuals with moderate-to-severe valvular disease, pulmonary hypertension, and history of cardiac disease were excluded. We performed a transthoracic echocardiogram and assessed left atrial (LA) and left ventricular (LV) mechanics via 2D-STE. Cardiopulmonary exercise testing by treadmill took place immediately thereafter. Peak oxygen uptake (VO 2 ) served as measure of functional capacity and ventilation/carbon dioxide output (VE/VCO 2 ) slope as surrogate of ventilation/perfusion mismatch. 20 subjects were included (age 51 ± 14 years, male gender 65%). Peak VO 2 strongly correlated with age (r = -0.83; P < 0.01), with E/e' ratio (r = -0.72; P < 0.01), and with LA reservoir- and conduit-phase mechanics, particularly with LA conduit strain rate (SR) (r = -0.82; P < 0.01), but showed no correlation with LA volume index or LV mechanics. A similar pattern of associations was identified for VE/VCO 2 slope. In multivariate analysis, LA conduit SR (β = -0.69; P = 0.02) emerged as sole independent correlate of peak VO 2 , adjusted for age and for E/e' ratio (adjusted r 2  = 0.76; P < 0.01). Conduit and reservoir components of LA mechanics displayed strong associations with peak VO 2 and VE/VCO 2 slope. LA conduit-phase SR seems best suited as echocardiographic marker of functional capacity in subjects with no structural heart disease.

Sol-gel preparation of silica and titania thin films

NASA Astrophysics Data System (ADS)

Thoř, Tomáš; Václavík, Jan

2016-11-01

Thin films of silicon dioxide (SiO2) and titanium dioxide (TiO2) for application in precision optics prepared via the solgel route are being investigated in this paper. The sol-gel process presents a low cost approach, which is capable of tailoring thin films of various materials in optical grade quality. Both SiO2 and TiO2 are materials well known for their application in the field of anti-reflective and also highly reflective optical coatings. For precision optics purposes, thickness control and high quality of such coatings are of utmost importance. In this work, thin films were deposited on microscope glass slides substrates using the dip-coating technique from a solution based on alkoxide precursors of tetraethyl orthosilicate (TEOS) and titanium isopropoxide (TIP) for SiO2 and TiO2, respectively. As-deposited films were studied using spectroscopic ellipsometry to determine their thickness and refractive index. Using a semi-empirical equation, a relationship between the coating speed and the heat-treated film thickness was described for both SiO2 and TiO2 thin films. This allows us to control the final heat-treated thin film thickness by simply adjusting the coating speed. Furthermore, films' surface was studied using the white-light interferometry. As-prepared films exhibited low surface roughness with the area roughness parameter Sq being on average of 0.799 nm and 0.33 nm for SiO2 and TiO2, respectively.

Cytokines and metabolic patterns in pediatric patients with critical illness.

PubMed

Briassoulis, George; Venkataraman, Shekhar; Thompson, Ann

2010-01-01

It is not known if cytokines, which are cell-derived mediators released during the host immune response to stress, affect metabolic response to stress during critical illness. The aim of this prospective study was to determine whether the metabolic response to stress is related to the inflammatory interleukin-6 (IL-6), 10 (IL-10), and other stress mediators' responses and to assess their relationships with different feeding patterns, nutritional markers, the severity of illness as assessed by the Multiple Organ System Failure (MOSF), the Pediatric Risk of Mortality Score (PRISM), systemic inflammatory response syndrome (SIRS), and mortality in critically ill children. Patients were classified as hypermetabolic, normometabolic, and hypometabolic when the measured resting energy expenditures (REE) were >110%, 90-110% and, <90% of the predicted basal metabolic rate, respectively. The initial predominance of the hypometabolic pattern (48.6%) declined within 1 week of acute stress (20%), and the hypermetabolic patterns dominated only after 2 weeks (60%). Only oxygen consumption (VO(2)) and carbon dioxide production (VCO(2)) (P < .0001) but none of the cytokines and nutritional markers, were independently associated with a hypometabolic pattern. REE correlated with the IL-10 but not PRISM. In the presence of SIRS or sepsis, CRP, IL-6, IL-10, Prognostic Inflammatory and Nutritional Index (NI), and triglycerides--but not glucose, VO(2), or VCO(2) increased significantly. High IL-10 levels (P = .0000) and low measured REE (P = .0000) were independently associated with mortality (11.7%), which was higher in the hypometabolic compared to other metabolic patterns (P < .005). Our results showed that only VO(2) and VCO(2), but not IL-6 or IL-10, were associated with a hypometabolic pattern which predominated the acute phase of stress, and was associated with increased mortality. Although in SIRS or sepsis, the cytokine response was reliably reflected by increases in NI and triglycerides, it was different from the metabolic (VO(2), VCO(2)) or glucose response.

Cytokines and Metabolic Patterns in Pediatric Patients with Critical Illness

PubMed Central

Briassoulis, George; Venkataraman, Shekhar; Thompson, Ann

2010-01-01

It is not known if cytokines, which are cell-derived mediators released during the host immune response to stress, affect metabolic response to stress during critical illness. The aim of this prospective study was to determine whether the metabolic response to stress is related to the inflammatory interleukin-6 (IL-6), 10 (IL-10), and other stress mediators' responses and to assess their relationships with different feeding patterns, nutritional markers, the severity of illness as assessed by the Multiple Organ System Failure (MOSF), the Pediatric Risk of Mortality Score (PRISM), systemic inflammatory response syndrome (SIRS), and mortality in critically ill children. Patients were classified as hypermetabolic, normometabolic, and hypometabolic when the measured resting energy expenditures (REE) were >110%, 90–110% and, <90% of the predicted basal metabolic rate, respectively. The initial predominance of the hypometabolic pattern (48.6%) declined within 1 week of acute stress (20%), and the hypermetabolic patterns dominated only after 2 weeks (60%). Only oxygen consumption (VO2) and carbon dioxide production (VCO2) (P < .0001) but none of the cytokines and nutritional markers, were independently associated with a hypometabolic pattern. REE correlated with the IL-10 but not PRISM. In the presence of SIRS or sepsis, CRP, IL-6, IL-10, Prognostic Inflammatory and Nutritional Index (NI), and triglycerides—but not glucose, VO2, or VCO2 increased significantly. High IL-10 levels (P = .0000) and low measured REE (P = .0000) were independently associated with mortality (11.7%), which was higher in the hypometabolic compared to other metabolic patterns (P < .005). Our results showed that only VO2 and VCO2, but not IL-6 or IL-10, were associated with a hypometabolic pattern which predominated the acute phase of stress, and was associated with increased mortality. Although in SIRS or sepsis, the cytokine response was reliably reflected by increases in NI and triglycerides, it was different from the metabolic (VO2, VCO2) or glucose response. PMID:20490277

Improvement of water resistance and dimensional stability of wood through titanium dioxide coating

Treesearch

Qingfeng Sun; Haipeng Yu; Yixing Liu; Jian Li; Yun Lu; John F. Hunt

2010-01-01

Moisture absorption and dimensional distortion are the major drawbacks of wood utilization as building material. In this study, poplar wood coated with a thin layer of titanium dioxide (TiO2) was prepared by the cosolvent-controlled hydrothermal method. Subsequently, its moisture absorption and dimensional stability were examined. Scanning...

Correlations between the circadian patterns of body temperature, metabolism and breathing in rats.

PubMed

Mortola, Jacopo P

2007-02-15

It had been demonstrated previously that the circadian patterns of activity and state of arousal are not essential for the manifestation of the daily patterns of pulmonary ventilation (V(E)), tidal volume (V(T)) and breathing frequency (f). In this study we investigated the extent of the linkage between the circadian pattern of breathing and those of body temperature (T(b)) and metabolic rate (oxygen consumption, V(O2), and carbon dioxide production, V(CO2)). Rats were instrumented for measurements of T(b) (by telemetry), and placed in a chamber for continuous 13-day period of measurement of breathing (by a modification of the barometric methodology), and of V(O2) and V(CO2) (by an open flow method). After the first 4 days in control conditions under a 12 h light:12 h dark (L:D) cycle, a perturbation was introduced on day 4, with an L-phase prolongation of 12 h, and on day 9, with an D-phase prolongation of 12 h. During the control days 1-4, all variables had daily oscillations (higher values in D), in phase with each other. During the perturbations (days 4-13), changes in T(b), V(O2) and V(CO2), averaged over the whole period, correlated significantly better with f than with V(T). Day-by-day X-Y loops indicated that V (E), V(T) and f could lead significantly the changes of T(b), V(O2) and V(CO2), and that these relations changed throughout the perturbation period. In addition, f and V(T) did not change necessarily in phase with each other. It is concluded that neither the oscillation in T(b) nor that in metabolism can be considered the direct cause of the daily oscillation of breathing. Presumably, the circadian pattern of breathing reflects the interplay of the daily patterns of many variables, none acting as the primary guide of the breathing daily rhythm.

Applications of surface plasmon polaritons in terahertz spectral regime

NASA Astrophysics Data System (ADS)

Zhan, Hui

This thesis presents the experimental work on the applications of surface plasmon polariton (SPP) in terahertz (THz) spectral range. Apertureless near-field optical microscopy (ANSOM) has been widely used to study the localized SPP on various material surfaces. THz ANSOM technique was recently developed to combine the THz time-domain spectroscopy and the ANSOM technique to provide a near-field detection on the localized THz surface waves with improved spatial resolution and signal-noise ratio. We have studied the metal-insulator transition in vanadium dioxide (VO2) thin film using THz ANSOM. We observe a variation of the terahertz amplitude due to the phase transition induced by an applied voltage across the sample. The change of the terahertz signal is related to the abrupt change of the conductivity of the VO2 film at the metal-insulator transition. The subwavelength spatial resolution of this near-field microscopy makes it possible to detect signatures of metallic domains, which exist in the VO2 thin films in the vicinity of the phase transition. We experimentally investigate the propagation of guided waves in finite-width parallel-plate waveguides (PPWGs) in the terahertz spectral range. We observe the propagation of SPPs in this guiding structure, instead of the fundamental transverse electromagnetic (TEM) mode. We find that the two-dimensional (2-D) energy confinement within the finite-width PPWG increases exponentially as the plate separation is reduced. We speculate that edge plasmons play an important role in the energy confinement in this open-structure waveguide. For comparison, the infinite-width PPWGs, the plates of which are much wider than the THz beam size, are also studied with several plate separations. The free-space beam diffraction produces a Gaussian profile along the unconfined direction. The unusual electric field profiles along the vertical direction, perpendicular to the plate are observed. The field enhancement near the metal surfaces are also explained by the SPPs coupled to the metal surfaces. Based on the 2-D energy confinement in the finite-width PPWGs, we design the tapered slot waveguide by slowly tapering the plate width and slot gap. We first study the transverse component of the THz electric field, where a subwavelength 2-D energy confinement is observed. The output spot size strongly depends on the output facet size, where the slot gap and the tip width are in the same scale range. Subwavelength confinement is obtained, corresponding to lambda/4. Further confinement is limited by the spatial resolution of the detecting technique. To overcome this problem, we adapt the THz ASNOM setup to scattering-probe imaging technique, which has been proven to obtain deep subwavelength spatial resolution and great signal-noise ratio. Scattering-probe imaging setup measures the longitudinal component of the electric field of SPPs in the tapered slot waveguides. By slowly tapering the tip width and the slot gap, we squeeze a single-cycle THz pulse down to a size of 10 mum (lambda/260) by 18 mum (lambda/145), a mode area of only 2.6 x 10-5lambda2. We also observe a polarity reversal for the electric field between the guiding region near the upper and lower plates of the waveguide. This polarity flip is similar to that associated with the symmetric plasmon mode of slot waveguides.

Virtual Observatory Interfaces to the Chandra Data Archive

NASA Astrophysics Data System (ADS)

Tibbetts, M.; Harbo, P.; Van Stone, D.; Zografou, P.

2014-05-01

The Chandra Data Archive (CDA) plays a central role in the operation of the Chandra X-ray Center (CXC) by providing access to Chandra data. Proprietary interfaces have been the backbone of the CDA throughout the Chandra mission. While these interfaces continue to provide the depth and breadth of mission specific access Chandra users expect, the CXC has been adding Virtual Observatory (VO) interfaces to the Chandra proposal catalog and observation catalog. VO interfaces provide standards-based access to Chandra data through simple positional queries or more complex queries using the Astronomical Data Query Language. Recent development at the CDA has generalized our existing VO services to create a suite of services that can be configured to provide VO interfaces to any dataset. This approach uses a thin web service layer for the individual VO interfaces, a middle-tier query component which is shared among the VO interfaces for parsing, scheduling, and executing queries, and existing web services for file and data access. The CXC VO services provide Simple Cone Search (SCS), Simple Image Access (SIA), and Table Access Protocol (TAP) implementations for both the Chandra proposal and observation catalogs within the existing archive architecture. Our work with the Chandra proposal and observation catalogs, as well as additional datasets beyond the CDA, illustrates how we can provide configurable VO services to extend core archive functionality.

Gd, I-doped TiO2 thin films coated on solid waste material: synthesis, characterization, and photocatalytic activity under UV or visible light irradiation

NASA Astrophysics Data System (ADS)

Deng, Siwei; Yu, Jiang; Yang, Chun; Chang, Jiahua; Wang, Yizheng; Wang, Ping; Xie, Shiqian

2017-10-01

In this work, titanium dioxide thin films doped with different concentrations of gadolinium (Gd) and iodine (I) were synthesized using the sol-gel method and successfully coated on solid waste material (made in our lab) by dipping, resulting in the titanium dioxide thin-film-coated material (TiO2M). Then, the doped titanium dioxide thin films were characterized by X-ray diffraction (XRD), SEM, and UV-Vis spectroscopy; the optimum coating cycle was evaluated by removal rates of COD and ammonia nitrogen in raw wastewater and secondary effluent. Moreover, the photocatalytic activity was determined by degradation efficiency of methyl orange. The results showed that TiO2M had desirable reusability and the photocatalytic activity was attractive under ultraviolet light irradiation. Furthermore, it is found that the amount of dopant in TiO2 was a key parameter in increasing the photoactivity. 1% Gd-doped TiO2M exhibited the best photocatalytic activity for the degradation of methyl orange with the removal rate reaching 85.55%. The result was in good agreement with the observed smaller crystallite size and profitable crystal structure (anatase phase). Besides, the TiO2M (0.8% Gd-doped TiO2M, 1% Gd-doped TiO2M, 10% I-doped TiO2M, and 5% I-1% Gd-doped TiO2M) with desirable photocatalytic activity at ultraviolet light irradiation was selected for the visible light photocatalytic experiments with taking methyl orange as the target pollutants. The results showed that all of them exhibited the similar photocatalytic activity after 7 h of sunlight irradiation (around 90% removal effect). In general, this research developed a very effective and environmentally friendly photocatalyst for pollutant degradation.

Switchable vanadium oxide films by a sol-gel process

NASA Astrophysics Data System (ADS)

Partlow, D. P.; Gurkovich, S. R.; Radford, K. C.; Denes, L. J.

1991-07-01

Thin polycrystalline films of VO2 and V2O3 were deposited on a variety of substrates using a sol-gel process. The orientation, microstructure, optical constants, and optical and electrical switching behavior are presented. These films exhibited sharp optical switching behavior even on an amorphous substrate such as fused silica. The method yields reproducible results and is amenable to the coating of large substrates and curved surfaces such as mirrors and lenses.

Effect of growth time on the structure, morphology and optical properties of hydrothermally synthesized TiO2 nanorod thin films

NASA Astrophysics Data System (ADS)

Mohapatra, A. K.; Nayak, J.

2018-05-01

Titanium dioxide (TiO2) nanorod thin films were deposited on fluorine doped tin oxide coated glass substrates by a single step rapid hydrothermal process. The concentration of the precursor, the temperature of the reaction mixture were optimized in order to enhance the rate of deposition. Unlike the previously reported hydrothermal treatment for 24 - 48 h, the deposition of well aligned titanium dioxide nanorods was achieved in a short time such as 3 - 8 h. The crystal structure of the films were investigated by X-rays diffraction. The morphology of the nanorod films were studied with scanning electron microscopy. The optical properties were studied by photoluminescence spectroscopy.

Structure and optical properties of TiO2 thin films deposited by ALD method

NASA Astrophysics Data System (ADS)

Szindler, Marek; Szindler, Magdalena M.; Boryło, Paulina; Jung, Tymoteusz

2017-12-01

This paper presents the results of study on titanium dioxide thin films prepared by atomic layer deposition method on a silicon substrate. The changes of surface morphology have been observed in topographic images performed with the atomic force microscope (AFM) and scanning electron microscope (SEM). Obtained roughness parameters have been calculated with XEI Park Systems software. Qualitative studies of chemical composition were also performed using the energy dispersive spectrometer (EDS). The structure of titanium dioxide was investigated by X-ray crystallography. A variety of crystalline TiO2 was also confirmed by using the Raman spectrometer. The optical reflection spectra have been measured with UV-Vis spectrophotometry.

Axially engineered metal-insulator phase transition by graded doping VO2 nanowires.

PubMed

Lee, Sangwook; Cheng, Chun; Guo, Hua; Hippalgaonkar, Kedar; Wang, Kevin; Suh, Joonki; Liu, Kai; Wu, Junqiao

2013-03-27

The abrupt first-order metal-insulator phase transition in single-crystal vanadium dioxide nanowires (NWs) is engineered to be a gradual transition by axially grading the doping level of tungsten. We also demonstrate the potential of these NWs for thermal sensing and actuation applications. At room temperature, the graded-doped NWs show metal phase on the tips and insulator phase near the center of the NW, and the metal phase grows progressively toward the center when the temperature rises. As such, each individual NW acts as a microthermometer that can be simply read out with an optical microscope. The NW resistance decreases gradually with the temperature rise, eventually reaching 2 orders of magnitude drop, in stark contrast to the abrupt resistance change in undoped VO2 wires. This novel phase transition yields an extremely high temperature coefficient of resistivity ~10%/K, simultaneously with a very low resistivity down to 0.001 Ω·cm, making these NWs promising infrared sensing materials for uncooled microbolometers. Lastly, they form bimorph thermal actuators that bend with an unusually high curvature, ~900 m(-1)·K(-1) over a wide temperature range (35-80 °C), significantly broadening the response temperature range of previous VO2 bimorph actuators. Given that the phase transition responds to a diverse range of stimuli-heat, electric current, strain, focused light, and electric field-the graded-doped NWs may find wide applications in thermo-opto-electro-mechanical sensing and energy conversion.

Characterisation of well-adhered ZrO2 layers produced on structured reactors using the sonochemical sol-gel method

NASA Astrophysics Data System (ADS)

Jodłowski, Przemysław J.; Chlebda, Damian K.; Jędrzejczyk, Roman J.; Dziedzicka, Anna; Kuterasiński, Łukasz; Sitarz, Maciej

2018-01-01

The aim of this study was to obtain thin zirconium dioxide coatings on structured reactors using the sonochemical sol-gel method. The preparation method of metal oxide layers on metallic structures was based on the synergistic combination of three approaches: the application of ultrasonic irradiation during the synthesis of Zr sol-gel based on a precursor solution containing zirconium(IV) n-propoxide, the addition of stabilszing agents, and the deposition of ZrO2 on the metallic structures using the dip-coating method. As a result, dense, uniform zirconium dioxide films were obtained on the FeCrAlloy supports. The structured reactors were characterised by various physicochemical methods, such as BET, AFM, EDX, XRF, XRD, XPS and in situ Raman spectroscopy. The results of the structural analysis by Raman and XPS spectroscopy confirmed that the metallic surface was covered by a ZrO2 layer without any impurities. SEM/EDX mapping revealed that the deposited ZrO2 covered the metallic support uniformly. The mechanical and high temperature tests showed that the developed ultrasound assisted sol-gel method is an efficient way to obtain thin, well-adhered zirconium dioxide layers on the structured reactors. The prepared metallic supports covered with thin ZrO2 layers may be a good alternative to layered structured reactors in several dynamics flow processes, for example for gas exhaust abatement.

Tm:GdVO4 microchip laser Q-switched by a Sb2Te3 topological insulator

NASA Astrophysics Data System (ADS)

Loiko, Pavel; Bogusławski, Jakub; Serres, Josep Maria; Kifle, Esrom; Kowalczyk, Maciej; Mateos, Xavier; Sotor, Jarosław; Zybała, Rafał; Mars, Krzysztof; Mikuła, Andrzej; Aguiló, Magdalena; Díaz, Francesc; Griebner, Uwe; Petrov, Valentin

2018-02-01

We report on the first application of a topological insulator based on antimony telluride (Sb2Te3) as a saturable absorber (SA) in a bulk microchip laser. The transmission-type SA consisted of a thin film of Sb2Te3 (thickness: 3 nm) deposited on a glass substrate by pulsed magnetron sputtering. The saturable absorption of the Sb2Te3 film was confirmed for ns-long pulses. The microchip laser was based on a Tm:GdVO4 crystal diode-pumped at 802 nm. In the continuous-wave regime, this laser generated 3.54 W at 1905-1921 nm with a slope efficiency η of 37%. The Q-switched laser generated a maximum average output power of 0.70 W at 1913 nm. The pulse energy and duration were 3.5 μJ and 223 ns, respectively, at a repetition rate of 200 kHz. The Sb2Te3 SAs are promising for passively Q-switched waveguide lasers at 2 μm.

In-Plane Impedance Spectroscopy measurements in Vanadium Dioxide thin films

NASA Astrophysics Data System (ADS)

Ramirez, Juan; Patino, Edgar; Schmidt, Rainer; Sharoni, Amos; Gomez, Maria; Schuller, Ivan

2012-02-01

In plane Impedance Spectroscopy measurements have been done in Vanadium Dioxide thin films in the range of 100 Hz to 1 MHz. Our measurements allows distinguishing between the resistive and capacitive response of the Vanadium Dioxide films across the metal-insulator transition. A non ideal RC behavior was found in our thin films from room temperature up to 334 K. Around the MIT, an increase of the total capacitance is observed. A capacitor-network model is able to reproduce the capacitance changes across the MIT. Above the MIT, the system behaves like a metal as expected, and a modified equivalent circuit is necessary to describe the impedance data adequately.

Dietary protein modulates circadian changes in core body temperature and metabolic rate in rats.

PubMed

Yamaoka, Ippei; Nakayama, Mitsuo; Miki, Takanori; Yokoyama, Toshifumi; Takeuchi, Yoshiki

2008-02-01

We assessed the contribution of dietary protein to circadian changes in core body temperature (Tb) and metabolic rate in freely moving rats. Daily changes in rat intraperitoneal temperature, locomotor activity (LMA), whole-body oxygen consumption (VO2), and carbon dioxide production (VCO2) were measured before and during 4 days of consuming a 20% protein diet (20% P), a protein-free diet (0% P), or a pair-fed 20% P diet (20% P-R). Changes in Tb did not significantly differ between the 20% P and 20% P-R groups throughout the study. The Tb in the 0% P group remained elevated during the dark (D) phase throughout the study, but VO2, VCO2, and LMA increased late in the study when compared with the 20% P-R group almost in accordance with elevated Tb. By contrast, during the light (L) phase in the 0% P group, Tb became elevated early in the study and thereafter declined with a tendency to accompany significantly lower VO2 and VCO2 when compared with the 20% P group, but not the 20% P-R group. The respiratory quotient (RQ) in the 0% P group declined throughout the D phase and during the early L phase. By contrast, RQ in the 20% P-R group consistently decreased from the late D phase to the end of the L phase. Our findings suggest that dietary protein contributes to the maintenance of daily oscillations in Tb with modulating metabolic rates during the D phase. However, the underlying mechanisms of Tb control during the L phase remain obscure.

Growth and Etch Rate Study of Low Temperature Anodic Silicon Dioxide Thin Films

PubMed Central

Ashok, Akarapu; Pal, Prem

2014-01-01

Silicon dioxide (SiO2) thin films are most commonly used insulating films in the fabrication of silicon-based integrated circuits (ICs) and microelectromechanical systems (MEMS). Several techniques with different processing environments have been investigated to deposit silicon dioxide films at temperatures down to room temperature. Anodic oxidation of silicon is one of the low temperature processes to grow oxide films even below room temperature. In the present work, uniform silicon dioxide thin films are grown at room temperature by using anodic oxidation technique. Oxide films are synthesized in potentiostatic and potentiodynamic regimes at large applied voltages in order to investigate the effect of voltage, mechanical stirring of electrolyte, current density and the water percentage on growth rate, and the different properties of as-grown oxide films. Ellipsometry, FTIR, and SEM are employed to investigate various properties of the oxide films. A 5.25 Å/V growth rate is achieved in potentiostatic mode. In the case of potentiodynamic mode, 160 nm thickness is attained at 300 V. The oxide films developed in both modes are slightly silicon rich, uniform, and less porous. The present study is intended to inspect various properties which are considered for applications in MEMS and Microelectronics. PMID:24672287

Effects of supercritical carbon dioxide on immobile bound polymer chains on solid substrates

NASA Astrophysics Data System (ADS)

Sen, Mani; Asada, Mitsunori; Jiang, Naisheng; Endoh, Maya K.; Akgun, Bulent; Satija, Sushil; Koga, Tadanori

2013-03-01

Adsorbed polymer layers formed on flat solid substrates have recently been the subject of extensive studies because it is postulated to control the dynamics of technologically relevant polymer thin films, for example, in lithography. Such adsorbed layers have been reported to hinder the mobility of polymer chains in thin films even at a large length scale. Consequently, this bound layer remains immobile regardless of processing techniques (i.e. thermal annealing, solvent dissolution, etc). Here, we investigate the use of supercritical carbon dioxide (scCO2) as a novel plasticizer for bound polystyrene layers formed on silicon substrates. In-situ swelling and interdiffusion experiments using neutron reflectivity were performed. As a result, we found the anomalous plasticization effects of scCO2 on the bound polymer layers near the critical point where the anomalous adsorption of CO2 molecules in polymer thin films has been reported previously. Acknowledgement: We acknowledge the financial support from NSF Grant No. CMMI-084626.

X-Ray Spectroscopy of Ultra-Thin Oxide/Oxide Heteroepitaxial Films: A Case Study of Single-Nanometer VO2/TiO2

PubMed Central

Quackenbush, Nicholas F.; Paik, Hanjong; Woicik, Joseph C.; Arena, Dario A.; Schlom, Darrell G.; Piper, Louis F. J.

2015-01-01

Epitaxial ultra-thin oxide films can support large percent level strains well beyond their bulk counterparts, thereby enabling strain-engineering in oxides that can tailor various phenomena. At these reduced dimensions (typically < 10 nm), contributions from the substrate can dwarf the signal from the epilayer, making it difficult to distinguish the properties of the epilayer from the bulk. This is especially true for oxide on oxide systems. Here, we have employed a combination of hard X-ray photoelectron spectroscopy (HAXPES) and angular soft X-ray absorption spectroscopy (XAS) to study epitaxial VO2/TiO2 (100) films ranging from 7.5 to 1 nm. We observe a low-temperature (300 K) insulating phase with evidence of vanadium-vanadium (V-V) dimers and a high-temperature (400 K) metallic phase absent of V-V dimers irrespective of film thickness. Our results confirm that the metal insulator transition can exist at atomic dimensions and that biaxial strain can still be used to control the temperature of its transition when the interfaces are atomically sharp. More generally, our case study highlights the benefits of using non-destructive XAS and HAXPES to extract out information regarding the interfacial quality of the epilayers and spectroscopic signatures associated with exotic phenomena at these dimensions. PMID:28793516

X-ray Spectroscopy of Ultra-thin Oxide/oxide Heteroepitaxial Films: A Case Study of Single-nanometer VO2/TiO2

DOE Office of Scientific and Technical Information (OSTI.GOV)

Quackenbush, Nicholas F.; Paik, Hanjong; Woicik, Joseph C.

2015-08-21

Epitaxial ultra-thin oxide films can support large percent level strains well beyond their bulk counterparts, thereby enabling strain-engineering in oxides that can tailor various phenomena. At these reduced dimensions (typically < 10 nm), contributions from the substrate can dwarf the signal from the epilayer, making it difficult to distinguish the properties of the epilayer from the bulk. This is especially true for oxide on oxide systems. Here, we have employed a combination of hard X-ray photoelectron spectroscopy (HAXPES) and angular soft X-ray absorption spectroscopy (XAS) to study epitaxial VO2/TiO2 (100) films ranging from 7.5 to 1 nm. We observe amore » low-temperature (300 K) insulating phase with evidence of vanadium-vanadium (V-V) dimers and a high-temperature (400 K) metallic phase absent of V-V dimers irrespective of film thickness. Results confirm that the metal insulator transition can exist at atomic dimensions and that biaxial strain can still be used to control the temperature of its transition when the interfaces are atomically sharp. Generally, our case study highlights the benefits of using non-destructive XAS and HAXPES to extract out information regarding the interfacial quality of the epilayers and spectroscopic signatures associated with exotic phenomena at these dimensions.« less

Exercise oscillatory breathing and increased ventilation to carbon dioxide production slope in heart failure: an unfavorable combination with high prognostic value.

PubMed

Guazzi, Marco; Arena, Ross; Ascione, Aniello; Piepoli, Massimo; Guazzi, Maurizio D

2007-05-01

Increased slope of exercise ventilation to carbon dioxide production (VE/VCO2) is an established prognosticator in patients with heart failure. Recently, the occurrence of exercise oscillatory breathing (EOB) has emerged as an additional strong indicator of survival. The aim of this study is to define the respective prognostic significance of these variables and whether excess risk may be identified when either respiratory disorder is present. In 288 stable chronic HF patients (average left ventricular ejection fraction, 33 +/- 13%) who underwent cardiopulmonary exercise testing, the prognostic relevance of VE/VCO2 slope, EOB, and peak VO2 was evaluated by multivariate Cox regression. During a mean interval of 28 +/- 13 months, 62 patients died of cardiac reasons. Thirty-five percent presented with EOB. Among patients exhibiting EOB, 54% had an elevated VE/VCO2 slope. The optimal threshold value for the VE/VCO2 slope identified by receiver operating characteristic analysis was < 36.2 or > or = 36.2 (sensitivity, 77%; specificity, 64%; P < .001). Univariate predictors of death included low left ventricular ejection fraction, low peak VO2, high VE/VCO2 slope, and EOB presence. Multivariate analysis selected EOB as the strongest predictor (chi2, 46.5; P < .001). The VE/VCO2 slope (threshold, < 36.2 or > or = 36.2) was the only other exercise test variable retained in the regression (residual chi2, 5.9; P = .02). The hazard ratio for subjects with EOB and a VE/VCO2 slope > or = 36.2 was 11.4 (95% confidence interval, 4.9-26.5; P < .001). These findings identify EOB as a strong survival predictor even more powerful than VE/VCO2 slope. Exercise oscillatory breathing presence does not necessarily imply an elevated VE/VCO2 slope, but combination of either both yields to a burden of risk remarkably high.

[The effect of prophylactically administered n-acetylcysteine on clinical indicators for tissue oxygenation during hyperoxic ventilation in cardiac risk patients].

PubMed

Spies, C; Giese, C; Meier-Hellmann, A; Specht, M; Hannemann, L; Schaffartzik, W; Reinhart, K

1996-04-01

Hyperoxic ventilation, used to prevent hypoxia during potential periods of hypoventilation, has been reported to paradoxically decrease whole-body oxygen consumption (VO2). Reduction in nutritive blood flow due to oxygen radical production is one possible mechanism. We investigated whether pretreatment with the sulfhydryl group donor and O2 radical scavenger N-acetylcysteine (NAC) would preserve VO2 and other clinical indicators of tissue oxygenation in cardiac risk patients. Thirty patients, requiring hemodynamic monitoring (radial and pulmonary artery catheters) because of cardiac risk factors, were included in this randomized investigation. All patients exhibited stable clinical conditions (hemodynamics, body temperature, hemoglobin, F1O2 < 0.5). Cardiac output was determined by thermodilution and VO2 by cardiovascular Fick. After baseline measurements, patients randomly received either 150 mg kg-1 NAC (n = 15) or placebo (n = 15) in 250 ml 5% dextrose i.v. over a period of 30 min. Measurements were repeated 30 min after starting NAC or placebo infusion, 30 min after starting hyperoxia (F1O2 = 1.0), and 30 min after resetting the original F1O2. There were no significant differences between groups in any of the measurements before treatment and after the return to baseline F1O2 at the end of the study, respectively. NAC, but not placebo infusion, caused a slight but not significant increase in cardiac index (CI), left ventricular stroke work index (LVSWI) and a decrease in systemic vascular resistance. Significant differences between groups during hyperoxia were: VO2 (NAC: 108 +/- 38 ml min-1m-2 vs placebo: 79 +/- 22 ml min-1m-2; P < or = 0.05), CI (NAC: 4.6 +/- 1.0 vs placebo: 3.7 +/- 1.11 min-1m-2; P < or = 0.05) and LVSWI (NAC: 47 +/- 12 vs placebo: 38 +/- 9; P < or = 0.05). The mean decrease of VO2 was 22% in the NAC group vs 47% in the placebo group (P < or = 0.05) and the mean difference between groups in venoarterial carbon dioxide gradient (PvaCO2) was 14% (P < or = 0.05). ST segment depression ( > 0.2 mV) was significantly less marked in the NAC group (NAC: -0.02 +/- 0.17 vs placebo: -0.23 +/- 0.15; P < or = 0.05). NAC helped preserve VO2, oxygen delivery, CI, LVSWI and PvaCO2 during brief hyperoxia in cardiac risk patients. Clinical signs of myocardial ischemia did not occur such as ST-depression if patients were prophylactically treated with NAC. This suggests that pretreatment with NAC could be considered to attenuate impaired tissue oxygenation and to preserve myocardial performance better in cardiac risk patients during hyperoxia.

Modifying ultrafast optical response of sputtered VOX nanostructures in a broad spectral range by altering post annealing atmosphere

NASA Astrophysics Data System (ADS)

Kürüm, U.; Yaglioglu, H. G.; Küçüköz, B.; Oksuzoglu, R. M.; Yıldırım, M.; Yağcı, A. M.; Yavru, C.; Özgün, S.; Tıraş, T.; Elmali, A.

2015-01-01

Nanostructured VOX thin films were grown in a dc magnetron sputter system under two different Ar:O2 gas flow ratios. The films were annealed under vacuum and various ratios of O2/N2 atmospheres. The insulator-to-metal transition properties of the thin films were investigated by temperature dependent resistance measurement. Photo induced insulator-to-metal transition properties were investigated by Z-scan and ultrafast white light continuum pump probe spectroscopy measurements. Experiments showed that not only insulator-to-metal transition, but also wavelength dependence (from NIR to VIS) and time scale (from ns to ultrafast) of nonlinear optical response of the VOX thin films could be fine tuned by carefully adjusting post annealing atmosphere despite different initial oxygen content in the production. Fabricated VO2 thin films showed reflection change in the visible region due to photo induced phase transition. The results have general implications for easy and more effective fabrication of the nanostructured oxide systems with controllable electrical, optical, and ultrafast optical responses.

Metal-organic framework thin films on a surface of optical fibre long period grating for chemical sensing

NASA Astrophysics Data System (ADS)

Hromadka, J.; Tokay, B.; James, S.; Korposh, S.

2017-04-01

An optical fibre long period grating (LPG) modified with a thin film of HKUST-1, a material from metal organic framework (MOF) family, was employed for the detection of carbon dioxide. The sensing mechanism is based on the measurement of the change of the refractive index (RI) of the coating that is induced by the penetration of CO2 molecules into the HKUST-1 pores. The responses of the resonance bands in the transmission spectrum of an LPG modified with 40 layers of HKUST-1 upon exposure to carbon dioxide in mixture with nitrogen were investigated.

High performance VO2 thin films fabricated by room-temperature reactive magnetron sputtering and rapid thermal annealing

NASA Astrophysics Data System (ADS)

Zhan, Yongjun; Xiao, Xiudi; Lu, Yuan; Cao, Ziyi; Cheng, Haoliang; Shi, Jifu; Xu, Gang

2017-10-01

The VOx thin films are successfully prepared on glass substrate by reactive magnetron sputtering at room-temperature, and subsequently annealed by rapid thermal annealing system in N2 from 0.5Pa to 10000Pa. The effects of annealing pressure on the optical performance and phase transition temperature (Tc) of VOx thin films are systematically investigated. The results show that the VOx thin films exhibit good performance with Tlum of 28.17%, ΔTsol of 12.69%, and Tc of 42. The annealing pressure had an obvious influence on the grain size, which can be attributed to light scattering effects by gas molecule. Compared with oxygen vacancy defects, the grain size plays a decisive role in the regulation of Tc. The restricting the growth of grain can be reduced the Tc, and a little deterioration effect on optical performance can be observed. In addition, the method in this paper not only depressed the Tc, but also simplified the process and improved efficiency, which will provide guidance for the preparation and application of VOx thin films.

Electron-electron correlations in Raman spectra of VO2

NASA Astrophysics Data System (ADS)

Goncharuk, I. N.; Ilinskiy, A. V.; Kvashenkina, O. E.; Shadrin, E. B.

2013-01-01

It has been shown that, in single crystals and films of a strongly correlated material, namely, vanadium dioxide, upon a thermally stimulated phase transition from the low-temperature monoclinic phase to the high-temperature tetragonal phase, the narrow-line Raman spectrum of the insulating (monoclinic) phase transforms into the broad-band Raman spectrum, which contains two peaks at 500 and 5000 cm-1 with widths of 400 and 3500 cm-1, respectively. It has been found that, as the temperature of the monoclinic phase approaches the structural phase transition temperature (340 K), the line profile of soft-mode phonons at a frequency of 149 cm-1 with A g symmetry and the line profile of phonons at a frequency of 201 cm-1 with A g symmetry acquire an asymmetric shape with a Fano antiresonance that is characteristic of the interaction of a single phonon vibration with a continuum of strongly correlated electrons. It has been demonstrated that the thermal transformation of peaks in the Raman spectra of the VO2 metallic phase is in quantitative agreement with the theory of Raman scattering in strongly correlated materials.

Conformal Coating of a Phase Change Material on Ordered Plasmonic Nanorod Arrays for Broadband All-Optical Switching.

PubMed

Guo, Peijun; Weimer, Matthew S; Emery, Jonathan D; Diroll, Benjamin T; Chen, Xinqi; Hock, Adam S; Chang, Robert P H; Martinson, Alex B F; Schaller, Richard D

2017-01-24

Actively tunable optical transmission through artificial metamaterials holds great promise for next-generation nanophotonic devices and metasurfaces. Plasmonic nanostructures and phase change materials have been extensively studied to this end due to their respective strong interactions with light and tunable dielectric constants under external stimuli. Seamlessly integrating plasmonic components with phase change materials, as demonstrated in the present work, can facilitate phase change by plasmonically enabled light confinement and meanwhile make use of the high sensitivity of plasmon resonances to the variation of dielectric constant associated with the phase change. The hybrid platform here is composed of plasmonic indium-tin-oxide nanorod arrays (ITO-NRAs) conformally coated with an ultrathin layer of a prototypical phase change material, vanadium dioxide (VO 2 ), which enables all-optical modulation of the infrared as well as the visible spectral ranges. The interplay between the intrinsic plasmonic nonlinearity of ITO-NRAs and the phase transition induced permittivity change of VO 2 gives rise to spectral and temporal responses that cannot be achieved with individual material components alone.

Ultra-thin Oxide Membranes: Synthesis and Carrier Transport

NASA Astrophysics Data System (ADS)

Sim, Jai Sung

Self-supported freestanding membranes are films that are devoid of any underlying supporting layers. The key advantage of such structures is that, due to the lack of substrate effects - both mechanical and chemical, the true native properties of the material can be probed. This is crucial since many of the studies done on materials that are used as freestanding membranes are done as films clamped to substrates or in the bulk form. This thesis focuses on the synthesis and fabrication as well as electrical studies of free standing ultrathin < 40nm oxide membranes. It also is one of the first demonstrations for electrically probing nanoscale freestanding oxide membranes. Fabrication of such membranes is non-trivial as oxide materials are often brittle and difficult to handle. Therefore, it requires an understanding of thin plate mechanics coupled with controllable thin film deposition process. Taking things a step further, to electrically probe these membranes required design of complex device architecture and extensive optimization of nano-fabrication processes. The challenges and optimized fabrication method of such membranes are demonstrated. Three materials are probed in this study, VO2, TiO2, and CeO2. VO2 for understanding structural considerations for electronic phase change and nature of ionic liquid gating, TiO2 and CeO2 for understanding surface conduction properties and surface chemistry. The VO2 study shows shift in metal-insulator transition (MIT) temperature arising from stress relaxation and opening of the hysteresis. The ionic liquid gating studies showed reversible modulation of channel resistance and allowed distinguishing bulk process from the surface effects. Comparing the ionic liquid gating experiments to hydrogen doping experiments illustrated that ionic liquid gating can be a surface limited electrostatic effect, if the critical voltage threshold is not exceeded. TiO2 study shows creation of non-stoichiometric forms under ion milling. Utilizing focused ion beam milling, thin membranes of Ti xOy of 100-300 nm thickness have been created. TEM studies indicated polycrystallinity and presence of twins in the FIB-milled nanowalls. Compositional analysis in the transmission electron microscope also showed reduced content of oxygen, confirming non-stoichiometry. Temperature dependence of the electrical resistivity of the nanowall showed semiconducting behavior with an activation energy different from that of TiO2 single crystals and was attributed to formation of TinO2n-1 phases after FIB processing. The CeO2 study involved high temperature conductivity studies on substrate-free self-supported nano-crystalline ceria membranes up to 800 K. Increasing conductivity with oxygen partial pressure directly opposing the behavior of thin film devices 'clamped' by substrate has been observed. This illustrate that the relaxed nature of free standing membranes, and increased surface to volume ratio enables more sensitive electrical response to oxygen adsorption which could have implications for their use in oxygen storage devices, solid oxide fuel cells, and chemical sensors. The work in this thesis advances the understanding of materials in freestanding membrane form and advances fabrication techniques that have not been explored before, having implications for sensors, actuators, SOFC, memristors, and physics of quasi-2D materials.

Pump-probe STM light emission spectroscopy for detection of photo-induced semiconductor-metal phase transition of VO2

NASA Astrophysics Data System (ADS)

Sakai, Joe; Katano, Satoshi; Kuwahara, Masashi; Uehara, Yoichi

2017-10-01

We attempted to observe pump-probe scanning tunneling microscopy (STM)-light emission (LE) from a VO2 thin film grown on a rutile TiO2(0 0 1) substrate, with an Ag tip fixed over a semiconducting domain. Laser pulses from a Ti:sapphire laser (wavelength 920 nm pulse width less than 1.5 ps) irradiated the tip-sample gap as pump and probe light sources. With a photon energy of 2.7 eV, suggesting phase transition from semiconducting monoclinic (M) to metallic rutile (R) phases in relation to the electronic band structure, faint LE was observed roughly 30 ps after the irradiation of the pump pulse, followed by retention for roughly 20 ps. The incident energy fluence of the pump pulse at the gap was five orders of magnitude lower than the threshold value for reported photo-induced M-R phase transition. The mechanism that makes it possible to reduce the threshold fluence is discussed.

Pump-probe STM light emission spectroscopy for detection of photo-induced semiconductor-metal phase transition of VO2.

PubMed

Sakai, Joe; Katano, Satoshi; Kuwahara, Masashi; Uehara, Yoichi

2017-10-11

We attempted to observe pump-probe scanning tunneling microscopy (STM)-light emission (LE) from a VO 2 thin film grown on a rutile TiO 2 (0 0 1) substrate, with an Ag tip fixed over a semiconducting domain. Laser pulses from a Ti:sapphire laser (wavelength 920 nm; pulse width less than 1.5 ps) irradiated the tip-sample gap as pump and probe light sources. With a photon energy of 2.7 eV, suggesting phase transition from semiconducting monoclinic (M) to metallic rutile (R) phases in relation to the electronic band structure, faint LE was observed roughly 30 ps after the irradiation of the pump pulse, followed by retention for roughly 20 ps. The incident energy fluence of the pump pulse at the gap was five orders of magnitude lower than the threshold value for reported photo-induced M-R phase transition. The mechanism that makes it possible to reduce the threshold fluence is discussed.

Gas sensing properties of very thin TiO2 films prepared by atomic layer deposition (ALD)

NASA Astrophysics Data System (ADS)

Boyadjiev, S.; Georgieva, V.; Vergov, L.; Baji, Zs; Gáber, F.; Szilágyi, I. M.

2014-11-01

Very thin titanium dioxide (TiO2) films of less than 10 nm were deposited by atomic layer deposition (ALD) in order to study their gas sensing properties. Applying the quartz crystal microbalance (QCM) method, prototype structures with the TiO2 ALD deposited thin films were tested for sensitivity to NO2. Although being very thin, the films were sensitive at room temperature and could register low concentrations as 50-100 ppm. The sorption is fully reversible and the films seem to be capable to detect for long term. These initial results for very thin ALD deposited TiO2 films give a promising approach for producing gas sensors working at room temperature on a fast, simple and cost-effective technology.

Thermal oxidation of silicon in a residual oxygen atmosphere—the RESOX process—for self-limiting growth of thin silicon dioxide films

NASA Astrophysics Data System (ADS)

Wright, Jason T.; Carbaugh, Daniel J.; Haggerty, Morgan E.; Richard, Andrea L.; Ingram, David C.; Kaya, Savas; Jadwisienczak, Wojciech M.; Rahman, Faiz

2016-10-01

We describe in detail the growth procedures and properties of thermal silicon dioxide grown in a limited and dilute oxygen atmosphere. Thin thermal oxide films have become increasingly important in recent years due to the continuing down-scaling of ultra large scale integration metal oxide silicon field effect transistors. Such films are also of importance for organic transistors where back-gating is needed. The technique described here is novel and allows self-limited formation of high quality thin oxide films on silicon surfaces. This technique is easy to implement in both research laboratory and industrial settings. Growth conditions and their effects on film growth have been described. Properties of the resulting oxide films, relevant for microelectronic device applications, have also been investigated and reported here. Overall, our findings are that thin, high quality, dense silicon dioxide films of thicknesses up to 100 nm can be easily grown in a depleted oxygen environment at temperatures similar to that used for usual silicon dioxide thermal growth in flowing dry oxygen.

Rational Hydrogenation for Enhanced Mobility and High Reliability on ZnO-based Thin Film Transistors: From Simulation to Experiment.

PubMed

Xu, Lei; Chen, Qian; Liao, Lei; Liu, Xingqiang; Chang, Ting-Chang; Chang, Kuan-Chang; Tsai, Tsung-Ming; Jiang, Changzhong; Wang, Jinlan; Li, Jinchai

2016-03-02

Hydrogenation is one of the effective methods for improving the performance of ZnO thin film transistors (TFTs), which originate from the fact that hydrogen (H) acts as a defect passivator and a shallow n-type dopant in ZnO materials. However, passivation accompanied by an excessive H doping of the channel region of a ZnO TFT is undesirable because high carrier density leads to negative threshold voltages. Herein, we report that Mg/H codoping could overcome the trade-off between performance and reliability in the ZnO TFTs. The theoretical calculation suggests that the incorporation of Mg in hydrogenated ZnO decrease the formation energy of interstitial H and increase formation energy of O-vacancy (VO). The experimental results demonstrate that the existence of the diluted Mg in hydrogenated ZnO TFTs could be sufficient to boost up mobility from 10 to 32.2 cm(2)/(V s) at a low carrier density (∼2.0 × 10(18) cm(-3)), which can be attributed to the decreased electron effective mass by surface band bending. The all results verified that the Mg/H codoping can significantly passivate the VO to improve device reliability and enhance mobility. Thus, this finding clearly points the way to realize high-performance metal oxide TFTs for low-cost, large-volume, flexible electronics.

Different threshold and bipolar resistive switching mechanisms in reactively sputtered amorphous undoped and Cr-doped vanadium oxide thin films

NASA Astrophysics Data System (ADS)

Rupp, Jonathan A. J.; Querré, Madec; Kindsmüller, Andreas; Besland, Marie-Paule; Janod, Etienne; Dittmann, Regina; Waser, Rainer; Wouters, Dirk J.

2018-01-01

This study investigates resistive switching in amorphous undoped and Cr-doped vanadium oxide thin films synthesized by sputtering deposition at low oxygen partial pressure. Two different volatile threshold switching characteristics can occur as well as a non-volatile bipolar switching mechanism, depending on device stack symmetry and Cr-doping. The two threshold switching types are associated with different crystalline phases in the conduction filament created during an initial forming step. The first kind of threshold switching, observed for undoped vanadium oxide films, was, by its temperature dependence, proven to be associated with a thermally triggered insulator-to-metal transition in a crystalline VO2 phase, whereas the threshold switch observed in chromium doped films is stable up to 90 °C and shows characteristics of an electronically induced Mott transition. This different behaviour for undoped versus doped films has been attributed to an increased stability of V3+ due to the Cr3+ doping (as evidenced by X-ray photoelectron spectroscopy analysis), probably favouring the creation of a crystalline Cr-doped V2O3 phase (rather than a Cr-doped VO2 phase) during the energetic forming step. The symmetric Pt/a-(VCr)Ox/Pt device showing high temperature stable threshold switching may find interesting applications as a possible new selector device for resistive switching memory (ReRAM) crossbar arrays.

Amorphous and Crystalline Vanadium Oxides as High-Energy and High-Power Cathodes for Three-Dimensional Thin-Film Lithium Ion Batteries.

PubMed

Mattelaer, Felix; Geryl, Kobe; Rampelberg, Geert; Dendooven, Jolien; Detavernier, Christophe

2017-04-19

Flexible wearable electronics and on-chip energy storage for wireless sensors drive rechargeable batteries toward thin-film lithium ion batteries. To enable more charge storage on a given surface, higher energy density materials are required, while faster energy storage and release can be obtained by going to thinner films. Vanadium oxides have been examined as cathodes in classical and thin-film lithium ion batteries for decades, but amorphous vanadium oxide thin films have been mostly discarded. Here, we investigate the use of atomic layer deposition, which enables electrode deposition on complex three-dimensional (3D) battery architectures, to obtain both amorphous and crystalline VO 2 and V 2 O 5 , and we evaluate their thin-film cathode performance. Very high volumetric capacities are found, alongside excellent kinetics and good cycling stability. Better kinetics and higher volumetric capacities were observed for the amorphous vanadium oxides compared to their crystalline counterparts. The conformal deposition of these vanadium oxides on silicon micropillar structures is demonstrated. This study shows the promising potential of these atomic layer deposited vanadium oxides as cathodes for 3D all-solid-state thin-film lithium ion batteries.

Comparison of anaerobic threshold determined by visual and mathematical methods in healthy women.

PubMed

Higa, M N; Silva, E; Neves, V F C; Catai, A M; Gallo, L; Silva de Sá, M F

2007-04-01

Several methods are used to estimate anaerobic threshold (AT) during exercise. The aim of the present study was to compare AT obtained by a graphic visual method for the estimate of ventilatory and metabolic variables (gold standard), to a bi-segmental linear regression mathematical model of Hinkley's algorithm applied to heart rate (HR) and carbon dioxide output (VCO2) data. Thirteen young (24 +/- 2.63 years old) and 16 postmenopausal (57 +/- 4.79 years old) healthy and sedentary women were submitted to a continuous ergospirometric incremental test on an electromagnetic braking cycloergometer with 10 to 20 W/min increases until physical exhaustion. The ventilatory variables were recorded breath-to-breath and HR was obtained beat-to-beat over real time. Data were analyzed by the nonparametric Friedman test and Spearman correlation test with the level of significance set at 5%. Power output (W), HR (bpm), oxygen uptake (VO2; mL kg(-1) min(-1)), VO2 (mL/min), VCO2 (mL/min), and minute ventilation (VE; L/min) data observed at the AT level were similar for both methods and groups studied (P > 0.05). The VO2 (mL kg(-1) min(-1)) data showed significant correlation (P < 0.05) between the gold standard method and the mathematical model when applied to HR (rs = 0.75) and VCO2 (rs = 0.78) data for the subjects as a whole (N = 29). The proposed mathematical method for the detection of changes in response patterns of VCO2 and HR was adequate and promising for AT detection in young and middle-aged women, representing a semi-automatic, non-invasive and objective AT measurement.

Study on the Effect of Various Sol-Gel Concentration to the Electrical, Structural and Optical Properties of the Nanostructured Titanium Dioxide Thin Films

NASA Astrophysics Data System (ADS)

Ahmad, M. K.; Rusop, M.

2009-06-01

Nanostructured Titanium Dioxide (TiO2) thin film with various sol-gel concentration has been successfully prepared using sol-gel spin coating method. The sol-gel concentration of nanostructured TiO2 thin films are varied at 0.1 M, 0.2 M, 0.3 M and 0.4 M, respectively. The effects of different sol-gel concentration of nanostructured TiO2 thin film structural, electrical and optical properties have been studied. The effects of these properties were characterized using X-Ray Diffractometer (XRD), 2-point probe I-V measurement and UV-Vis-NIR Spectrophotometer. For electrical properties, 0.2 M of sol-gel concentration gives the lowest sheet resistance among other concentrated sol-gels. As for structural properties, 0.1 M of concentration gives very weak peak, and continues stronger as in comes to 0.2 M until 0.4 M. It is due to amount of solute (i.e Titanium Isopropoxide) increases in the solution and therefore the intensity of (101) planes become higher. The optical transmission in the visible region (450-1000 nm) for 0.1 M and 0.2 M are the highest (>80%), indicating that the films are transparent in the visible region. The transmission decreases sharply near the ultraviolet region due to the band gap absorption.

Deposition of tetracene thin films on SiO2/Si substrates by rapid expansion of supercritical solutions using carbon dioxide

NASA Astrophysics Data System (ADS)

Fujii, Tatsuya; Takahashi, Yuta; Uchida, Hirohisa

2015-03-01

We report on a novel deposition technique of tetracene (naphthacene) thin films on SiO2/Si substrates by rapid expansion of supercritical solutions (RESS) using CO2. Optical microscopy and scanning electron microscopy show that the thin films consist of a high density of submicron-sized grains. The growth mode of the grains followed the Volmer-Weber mode. X-ray diffraction shows that the thin films have regularly arranged structures in both the horizontal and vertical directions of the substrate. A fabricated top-contacted organic thin-film transistor with the tetracene active layer showed p-type transistor characteristics with a field-effect mobility of 5.1 × 10-4 cm2 V-1 s-1.

Sol-gel synthesis and optical properties of titanium dioxide thin film

NASA Astrophysics Data System (ADS)

Ullah, Irfan; Khattak, Shaukat Ali; Ahmad, Tanveer; Saman; Ludhi, Nayab Ali

2018-03-01

The titanium dioxide (TiO2) is synthesized by sol-gel method using titanium-tetra-iso-propoxide (TTIP) as a starting material, and deposited on the pre-cleaned glass substrate using spin coating technique at optimized parameters. Energy dispersive X-ray (EDX) spectroscopy confirms successful TiO2 growth. The optical properties concerning the transmission and absorption spectra show 85% transparency and 3.28 eV wide optical band gap for indirect transition, calculated from absorbance. The exponential behavior of absorption edge is observed and attributed to the localized states electronic transitions, curtailed in the indirect band gap of the thin film. The film reveals decreasing refractive index with increasing wavelength. The photoluminescence (PL) study ascertains that luminescent properties are due to the surface defects.

Ion assisted deposition of SiO2 film from silicon

NASA Astrophysics Data System (ADS)

Pham, Tuan. H.; Dang, Cu. X.

2005-09-01

Silicon dioxide, SiO2, is one of the preferred low index materials for optical thin film technology. It is often deposited by electron beam evaporation source with less porosity and scattering, relatively durable and can have a good laser damage threshold. Beside these advantages the deposition of critical optical thin film stacks with silicon dioxide from an E-gun was severely limited by the stability of the evaporation pattern or angular distribution of the material. The even surface of SiO2 granules in crucible will tend to develop into groove and become deeper with the evaporation process. As the results, angular distribution of the evaporation vapor changes in non-predicted manner. This report presents our experiments to apply Ion Assisted Deposition process to evaporate silicon in a molten liquid form. By choosing appropriate process parameters we can get SiO2 film with good and stable property.

Influence of acute moderate hypoxia on time to exhaustion at vVO2max in unacclimatized runners.

PubMed

Billat, V L; Lepretre, P M; Heubert, R P; Koralsztein, J P; Gazeau, F P

2003-01-01

Eight unacclimatized long-distance runners performed, on a level treadmill, an incremental test to determine the maximal oxygen uptake (VO2max) and the minimal velocity eliciting VO2max (vVO2max) in normoxia (N) and acute moderate hypoxia (H) corresponding to an altitude of 2,400 m (PIO 2 of 109 mmHg). Afterwards, on separate days, they performed two all-out constant velocity runs at vO2 max in a random order (one in N and the other in H). The decrease in VO2max between N and H showed a great degree of variability amongst subjects as VO2max decreased by 8.9 +/- 4 ml x min(-1) x kg)(-1) in H vs. N conditions (-15.3 +/- 6.3 % with a range from -7.9 % to -23.8 %). This decrease in VO2max was proportional to the value of VO2max (VO2max vs. delta VO2max N-H, r = 0.75, p = 0.03). The time run at vVO2max was not affected by hypoxia (483 +/- 122 vs. 506 +/- 148 s, in N and H, respectively, p = 0.37). However, the greater the decrease in vVO2max during hypoxia, the greater the runners increased their time to exhaustion at vVO2max (vVO2max N-H vs. tlim @vVO2max N-H, r = -0.75, p = 0.03). In conclusion, this study showed that there was a positive association between the extent of decrease in vVO2max, and the increase in run time at vVO2max in hypoxia.

Properties of Hydrogen Sulfide Sensors Based on Thin Films of Tin Dioxide and Tungsten Trioxide

NASA Astrophysics Data System (ADS)

Sevastianov, E. Yu.; Maksimova, N. K.; Chernikov, E. V.; Sergeichenko, N. V.; Rudov, F. V.

2016-12-01

The effect of hydrogen sulfide in the concentration range of 0-100 ppm on the characteristics of thin films of tin dioxide and tungsten trioxide obtained by the methods of magnetron deposition and modified with gold in the bulk and on the surface is studied. The impurities of antimony and nickel have been additionally introduced into the SnO2 bulk. An optimal operating temperature of sensors 350°C was determined, at which there is a satisfactory correlation between the values of the response to H2S and the response time. Degradation of the sensor characteristics is investigated in the long-term ( 0.5-1.5 years) tests at operating temperature and periodic exposure to hydrogen sulfide, as well as after conservation of samples in the laboratory air. It is shown that for the fabrication of H2S sensors, the most promising are thin nanocrystalline Au/WO3:Au films characterized by a linear concentration dependence of the response and high stability of parameters during exploitation.

Comparison of the 1.5 Mile Run Times at 7,200 Feet and Simulated 850 Feet in a Hyperoxic Room

DTIC Science & Technology

2012-03-01

Maximal Oxygen Update ( VO2 max) Test ......................................... 7 Figure 3 - VO2 Max results for Male, Female and All Subjects. * p...0.001 between Male and Female VO2 ’s. ............................................................. 11 Figure 4 - VO2 Max vs Predicted VO2 Max at 850...and 7,200 Feet ................. 12 Figure 5 - Actual VO2 Max vs Predicted VO2 Max at ALT (7,200 Feet) ....... 13 Figure 6 - VO2 Max vs Predicted

Thermochromic VO2 thin films deposited by magnetron sputtering for smart window applications

NASA Astrophysics Data System (ADS)

Fortier, Jean-Philippe

"Smart" windows are a perfect innovative example of technology that reduces our energy dependence and our impact on the environment while saving on the economical point of view. With the use of vanadium dioxide (VO2), a thermochromic compound, and this, as a thin coating, it would in fact be possible to control the sun's transmission of infrared light (heat) as a function of the surrounding environment temperature. In other words, its optical behavior would allow a more effective management of heat exchanges between a living venue and the outdoor environment. However, this type of window is still in a developmental stage. First, the oxide's deposition is not simple in nature. Based on a conventional deposition technique called magnetron sputtering mainly used in the fenestration industry, several factors such as the oxygen concentration and the substrate temperature during deposition can affect the coating's thermochromic behavior, and this, by changing its composition and crystallinity. Other control parameters such as the deposition rate, the pressure in the sputtering chamber and the choice of substrate may also modify the film microstructure, thereby varying its optical and electrical properties. In addition, several issues still persist as to its commercial application. For starters, the material's structural transition, related to the change of its optical properties, only occurs around 68°C. In addition, its low transparency and natural greenish colour are not visually appealing. Then, to this day, the deposition temperature required to crystallize and form the thermochromic oxide remains an obstacle for a possible large-scale application. Ultimately, although the material's change in temperature has been shown to be advantageous in situations of varying climate, the existing corrective solutions to these issues generate a deterioration of the thermochromic behavior. With no practical expertise on the material, this project was undertaken with certain objectives in mind. To start, we had to find a first recipe to obtain our first samples of the material. Using the literature as a starting point, several samples were deposited by magnetron sputtering while improving certain deposition conditions as well as varying influential deposition parameters. Once the oxide obtained, it was necessary to optimize the parameters not only to render thermochromic coatings with the highest possible quality, but also to determine each parameter's sensitivity. Characterization techniques such as microscopy, spectroscopy, ellipsometry, scanning electron microscopy, atomic force microscopy, Raman spectroscopy, x-ray diffraction and finally, time-of-flight secondary ion mass spectrometry were used to analyze different aspects of our multiple samples. Indeed, to mention only the ix most relevant observations, we were able to confirm that the microstructure, composition, most relevant observations, we were able to confirm that the microstructure, composition, crystallinity and film thickness have a significant impact on the coating's thermochromic behavior as well as on its optical properties. As a result, the oxygen concentration and the thickness had to be optimized and the deposition temperature, maximized. Reactive poisoning of the sputtering target is also a phenomenon that needs to be considered during deposition. Then, our sputtering target and substrate cleaning procedures were improved following certain observations. VO2 was equally found to be sensitive to small temperature gradients in addition of being highly dependent upon high deposition temperatures. Finally, the use of different substrates has subsequently shown that the film composition and microstructure can be altered. After mastering the deposition of thin VO2 films, we explored another path that we found to be quite innovative. A relatively new deposition technique called HiPIMS was put to the test based on its new characteristics, leading to believe that it had the potential of improving our coatings and allow a better application of the material. We first took some time to study and adapt to the technique's distinct characteristics, based on pulsed sputtering. After parameter optimization, the highly ionized sputtering flux allowed us to obtain more crystalline and denser coatings, with considerable homogeneity, less roughness and a higher purity than films obtained using conventional sputtering and than those described in the literature. With these features, it was possible to extract the material's optical constants and to obtain a change of transmission in the infrared (DeltaT2500 nm=61%) comparable to the best performing thermochromic samples documented in the literature, and this, at a substantially lower deposition temperature (300°C). This is a technical highlight, as conventional sputtering methods normally require temperatures above 400°C to form the oxide. In addition, our films had transition temperatures lower than that of the bulk material. The results seem to indicate that HiPIMS is promising and preferable for the deposition of VO2 films with respect to their practical use in the world of windows. (Abstract shortened by UMI.).

Formation kinetics and mechanism of metastable vacancy-dioxygen complex in neutron irradiated Czochralski silicon

NASA Astrophysics Data System (ADS)

Dong, Peng; Wang, Rong; Yu, Xuegong; Chen, Lin; Ma, Xiangyang; Yang, Deren

2017-07-01

We have quantitatively investigated the formation kinetics of metastable vacancy-dioxygen (VO2) complex in a structure of [VO + Oi], where a VO complex is trapped in a next-neighbor position to an interstitial oxygen atom (Oi). It is found that the VO annihilation is accompanied by the generation of metastable [VO + Oi] complex during annealing in the temperature range of 220-250 °C. The activation energy for [VO + Oi] generation appears at around 0.48 eV, which is much lower than the counterpart of stable VO2 complex. This indicates that the formation of [VO + Oi] complex originates from the reaction between VO and Oi. The ab initio calculations show that the formation energy of [VO + Oi] complex is larger than that of VO2 complex, which means that [VO + Oi] complex is thermodynamically unfavorable as compared to VO2 complex. However, the binding energy of [VO + Oi] complex is positive, indicating that [VO + Oi] complex is stable against decomposition of VO and Oi in silicon. It is believed that [VO + Oi] complex serves as the intermediate for VO to VO2 conversion.

Solid State Research, 1977:3

DTIC Science & Technology

1977-08-15

Reflectivity of CdGeAs, G.D. Holah* A. Miller* W. D. Dunnett* G.W. Iseler Solid State Commun. 23, 75 (1977) 4726 Thin-Film VO2 Submillimeter- Wave...Measure- ments 4439 X-Ray Lithographic and Pro- cessing Technologies for Fabricating Surface Relief Gratings with Profile Control < 400 A S. A...stripe-geometry lasers. The stripe width is 1 3 |i.m, and the cavity length is typically 3 80 to 400 |im. Ohmic contacts were made by

Multilayer Ni/Fe thin films as oxygen evolution catalysts for solar fuel production

NASA Astrophysics Data System (ADS)

Biset-Peiró, M.; Murcia-López, S.; Fàbrega, C.; Morante, J. R.; Andreu, T.

2017-03-01

The slow kinetics and high overpotential of the oxygen evolution reaction is one of the main limiting factors to achieve the minimum required performances of the so-called photoelectrochemical water splitting systems. An oxygen evolution catalyst (OEC) becomes essential in order to perform this process with higher efficiency. Herein, we report the physical, optical and electrochemical characterization of multilayer Ni/Fe thin films as earth-abundant OEC, to avoid the use of platinum group metals (PGM). Uniform films of thicknesses ranging from 1 to 10 nm were fabricated by sequential and alternate thermal evaporation of Ni and Fe. It was found that the successive deposition allows the fabrication of a Ni terminated surface that does not need activation due to the Fe underlayer. The lowest overpotential achieved for NiFe was 370 mV at 10 mA cm-2 and a Tafel slope of 37 mV dec-1 with 1 nm thickness and 95% transmittance. Finally, NiFe OEC was implemented on top of Mo:BiVO4 photoanodes which resulted in a reduction of the open circuit potential of 0.2 V and up to five fold increase of the oxidation efficiency at 0.7 VRHE. The results presented facilitate the practical implementation of BiVO4 photoanodes in tandem configuration for bias free photoassisted water splitting.

Effect of Vertical Annealing on the Nitrogen Dioxide Response of Organic Thin Film Transistors

PubMed Central

Hou, Sihui; Zhuang, Xinming; Yang, Zuchong

2018-01-01

Nitrogen dioxide (NO2) sensors based on organic thin-film transistors (OTFTs) were fabricated by conventional annealing (horizontal) and vertical annealing processes of organic semiconductor (OSC) films. The NO2 responsivity of OTFTs to 15 ppm of NO2 is 1408% under conditions of vertical annealing and only 72% when conventional annealing is applied. Moreover, gas sensors obtained by vertical annealing achieve a high sensing performance of 589% already at 1 ppm of NO2, while showing a preferential response to NO2 compared with SO2, NH3, CO, and H2S. To analyze the mechanism of performance improvement of OTFT gas sensors, the morphologies of 6,13-bis(triisopropylsilylethynyl)-pentacene (TIPS-pentacene) films were characterized by atomic force microscopy (AFM) in tapping mode. The results show that, in well-aligned TIPS-pentacene films, a large number of effective grain boundaries inside the conducting channel contribute to the enhancement of NO2 gas sensing performance. PMID:29596331

Cardiorespiratory fitness is differentially associated with cortical thickness in young and older adults

PubMed Central

Williams, Victoria; Hayes, Jasmeet P.; Forman, Daniel E.; Salat, David H.; Sperling, Reisa A.; Verfaellie, Mieke; Hayes, Scott M.

2016-01-01

Aging is associated with reductions in gray matter volume and cortical thickness. One factor that may play a role in mitigating age-associated brain decline is cardiorespiratory fitness (CRF). Although previous work has identified a positive association between CRF and gray matter volume, the relationship between CRF and cortical thickness, which serves as a more sensitive indicator of gray matter integrity, has yet to be assessed in healthy young and older adults. To address this gap in the literature, 32 young and 29 older adults completed treadmill-based progressive maximal exercise testing to assess CRF (peak VO2), and structural magnetic resonance imaging (MRI) to determine vertex-wise surface-based cortical thickness metrics. Results indicated a significant CRF by age group interaction such that Peak VO2 was associated with thicker cortex in older adults but with thinner cortex in young adults. Notably, the majority of regions demonstrating a positive association between peak VO2 and cortical thickness in older adults overlapped with brain regions showing significant age-related cortical thinning. Further, when older adults were categorized as high or low fit based on normative data, we observed a stepwise pattern whereby cortex was thickest in young adults, intermediate in high fit older adults and thinnest in low fit older adults. Overall, these results support the notion that CRF-related neuroplasticity may reduce although not eliminate age-related cortical atrophy. PMID:27989841

Cardiorespiratory fitness is differentially associated with cortical thickness in young and older adults.

PubMed

Williams, Victoria J; Hayes, Jasmeet P; Forman, Daniel E; Salat, David H; Sperling, Reisa A; Verfaellie, Mieke; Hayes, Scott M

2017-02-01

Aging is associated with reductions in gray matter volume and cortical thickness. One factor that may play a role in mitigating age-associated brain decline is cardiorespiratory fitness (CRF). Although previous work has identified a positive association between CRF and gray matter volume, the relationship between CRF and cortical thickness, which serves as a more sensitive indicator of gray matter integrity, has yet to be assessed in healthy young and older adults. To address this gap in the literature, 32 young and 29 older adults completed treadmill-based progressive maximal exercise testing to assess CRF (peak VO 2 ), and structural magnetic resonance imaging (MRI) to determine vertex-wise surface-based cortical thickness metrics. Results indicated a significant CRF by age group interaction such that Peak VO 2 was associated with thicker cortex in older adults but with thinner cortex in young adults. Notably, the majority of regions demonstrating a positive association between peak VO 2 and cortical thickness in older adults overlapped with brain regions showing significant age-related cortical thinning. Further, when older adults were categorized as high or low fit based on normative data, we observed a stepwise pattern whereby cortex was thickest in young adults, intermediate in high fit older adults and thinnest in low fit older adults. Overall, these results support the notion that CRF-related neuroplasticity may reduce although not eliminate age-related cortical atrophy. Published by Elsevier Inc.

Stress Analysis of Adhesively Bonded Repairs to Fibre Composite Structures,

DTIC Science & Technology

1981-03-01

which is bonded to a thin sheet of fibre composite material. The x and y axes are taken in a plane parallel to the midsurface of the sheet with the z...SHEET vI X1 FIG. 1 AXIS SYSTEM IN PATCH related to the displacements at the midsurface of the patch, which we will denote by uo, vo and w, and the...displacements at the midsurface of the sheet, which we will denote by u, vs and w, by the following expression: T ( =uo - us +f7 ’ f/fg + (VO - v, +f 7 3)f4

Measurement of collective excitations in VO 2 by resonant inelastic x-ray scattering

DOE PAGES

He, Haowei; Gray, A. X.; Granitzka, P.; ...

2016-10-15

Vanadium dioxide is of broad interest as a spin-1/2 electron system that realizes a metal-insulator transition near room temperature, due to a combination of strongly correlated and itinerant electron physics. Here, resonant inelastic x-ray scattering is used to measure the excitation spectrum of charge and spin degrees of freedom at the vanadium L edge under different polarization and temperature conditions, revealing excitations that differ greatly from those seen in optical measurements. Furthermore, these spectra encode the evolution of short-range energetics across the metal-insulator transition, including the low-temperature appearance of a strong candidate for the singlet-triplet excitation of a vanadium dimer.

Relation of oxygen uptake to work rate in prepubertal healthy children - reference for VO2/W-slope and effect on cardiorespiratory fitness assessment.

PubMed

Tompuri, Tuomo; Lintu, Niina; Laitinen, Tomi; Lakka, Timo A

2017-08-09

Exercise testing by cycle ergometer allows to observe the interaction between oxygen uptake (VO 2 ) and workload (W), and VO 2 /W-slope can be used as a diagnostic tool. Respectively, peak oxygen uptake (VO 2 PEAK ) can be estimated by maximal workload. We aim to determine reference for VO 2 /W-slope among prepubertal children and define agreement between estimated and measured VO 2 PEAK . A total of 38 prepubertal children (20 girls) performed a maximal cycle ergometer test with respiratory gas analysis. VO 2 /W-slopes were computed using linear regression. Agreement analysis by Bland and Altman for estimated and measured VO 2 PEAK was carried out including limits of agreement (LA). Determinants for VO 2 /W-slopes and estimation bias were defined. VO2/W-slope was in both girls and boys ≥9·4 and did not change with exercise level, but the oxygen cost of exercise was higher among physically more active children. Estimated VO 2 PEAK had 6·4% coefficient of variation, and LA varied from 13% underestimation to 13% overestimation. Bias had a trend towards underestimation along lean mass proportional VO 2 PEAK . The primary determinant for estimation bias was VO2/W-slope (β = -0·65; P<0·001). The reference values for VO 2 /W-slope among healthy prepubertal children were similar to those published for adults and among adolescents. Estimated and measured VO 2 PEAK should not be considered to be interchangeable because of the variation in the relationship between VO 2 and W. On other hand, variation in the relationship between VO 2 and W enables that VO 2 /W-slope can be used as a diagnostic tool. © 2017 Scandinavian Society of Clinical Physiology and Nuclear Medicine. Published by John Wiley & Sons Ltd.

Electrolytic Manganese Dioxide Coatings on High Aspect Ratio Micro-Pillar Arrays for 3D Thin Film Lithium Ion Batteries

PubMed Central

Zargouni, Yafa; Deheryan, Stella; Radisic, Alex; Alouani, Khaled; Vereecken, Philippe M.

2017-01-01

In this work, we present the electrochemical deposition of manganese dioxide (MnO2) thin films on carbon-coated TiN/Si micro-pillars. The carbon buffer layer, grown by plasma enhanced chemical vapor deposition (PECVD), is used as a protective coating for the underlying TiN current collector from oxidation, during the film deposition, while improving the electrical conductivity of the stack. A conformal electrolytic MnO2 (EMD) coating is successfully achieved on high aspect ratio C/TiN/Si pillar arrays by tailoring the deposition process. Lithiation/Delithiation cycling tests have been performed. Reversible insertion and extraction of Li+ through EMD structure are observed. The fabricated stack is thus considered as a good candidate not only for 3D micorbatteries but also for other energy storage applications. PMID:28555017

Pulsed Laser Deposited Ferromagnetic Chromium Dioxide thin Films for Applications in Spintronics

NASA Astrophysics Data System (ADS)

Dwivedi, S.; Jadhav, J.; Sharma, H.; Biswas, S.

Stable rutile type tetragonal chromium dioxide (CrO2) thin films have been deposited on lattice-matched layers of TiO2 by KrF excimer laser based pulsed laser deposition (PLD) technique using Cr2O3 target. The TiO2 seed layer was deposited on oxidized Si substrates by the same PLD process followed by annealing at 1100 °C for 4 h. The lattice-matched interfacial layer is required for the stabilization of Cr (IV) phase in CrO2, since CrO2 behaves as a metastable compound under ambient conditions and readily converts into its stable phase of Cr (III) oxide, Cr2O3. Analyses with X-ray diffraction (XRD), Glancing-angle XRD (GIXRD), Raman spectroscopy and grazing-angle Fourier transform infra-red (FTIR) spectroscopy confirm the presence of tetragonal CrO2 phase in the as-deposited films. Microstructure and surface morphology in the films were studied with field emission scanning electron microscope (FESEM) and atomic force microscope (AFM). Electrical and magnetic characterizations of the films were performed at room temperature. Such type of stable half-metallic CrO2 thin films with low field magnetoresistive switching behaviour are in demand for applications as diverse as spin-FETs, magnetic sensors, and magneto-optical devices.

Ab Initio Metadynamics Study of the VO2+/VO2+ Redox Reaction Mechanism at the Graphite Edge/Water Interface.

PubMed

Jiang, Zhen; Klyukin, Konstantin; Alexandrov, Vitaly

2018-06-20

Redox flow batteries (RFBs) are promising electrochemical energy storage systems, for which development is impeded by a poor understanding of redox reactions occurring at electrode/electrolyte interfaces. Even for the conventional all-vanadium RFB chemistry employing V 2+ /V 3+ and VO 2 + /VO 2+ couples, there is still no consensus about the reaction mechanism, electrode active sites, and rate-determining step. Herein, we perform Car-Parrinello molecular dynamics-based metadynamics simulations to unravel the mechanism of the VO 2 + /VO 2+ redox reaction in water at the oxygen-functionalized graphite (112̅0) edge surface serving as a representative carbon-based electrode. Our results suggest that during the battery discharge aqueous VO 2 + /VO 2+ species adsorb at the surface C-O groups as inner-sphere complexes, exhibiting faster adsorption/desorption kinetics than V 2+ /V 3+ , at least at low vanadium concentrations considered in our study. We find that this is because (i) VO 2 + /VO 2+ conversion does not involve the slow transfer of an oxygen atom, (ii) protonation of VO 2 + is spontaneous and coupled to interfacial electron transfer in acidic conditions to enable VO 2+ formation, and (iii) V 3+ found to be strongly bound to oxygen groups of the graphite surface features unfavorable desorption kinetics. In contrast, the reverse process taking place upon charging is expected to be more sluggish for the VO 2 + /VO 2+ redox couple because of both unfavorable deprotonation of the VO 2+ water ligands and adsorption/desorption kinetics.

Altered gas-exchange at peak exercise in obese adolescents: implications for verification of effort during cardiopulmonary exercise testing.

PubMed

Marinus, Nastasia; Bervoets, Liene; Massa, Guy; Verboven, Kenneth; Stevens, An; Takken, Tim; Hansen, Dominique

2017-12-01

Cardiopulmonary exercise testing is advised ahead of exercise intervention in obese adolescents to assess medical safety of exercise and physical fitness. Optimal validity and reliability of test results are required to identify maximal exercise effort. As fat oxidation during exercise is disturbed in obese individuals, it remains an unresolved methodological issue whether the respiratory gas exchange ratio (RER) is a valid marker for maximal effort during exercise testing in this population. RER during maximal exercise testing (RERpeak), and RER trajectories, was compared between obese and lean adolescents and relationships between RERpeak, RER slope and subject characteristics (age, gender, Body Mass Index [BMI], Tanner stage, physical activity level) were explored. Thirty-four obese (BMI: 35.1±5.1 kg/m²) and 18 lean (BMI: 18.8±1.9 kg/m²) adolescents (aged 12-18 years) performed a maximal cardiopulmonary exercise test on bike, with comparison of oxygen uptake (VO2), heart rate (HR), expiratory volume (VE), carbon dioxide output (VCO2), and cycling power output (W). RERpeak (1.09±0.06 vs. 1.14±0.06 in obese vs. lean adolescents, respectively) and RER slope (0.03±0.01 vs. 0.05±0.01 per 10% increase in VO2, in obese vs. lean adolescents, respectively) was significantly lower in obese adolescents, and independently related to BMI (P<0.05). Adjusted for HRpeak and VEpeak, RERpeak and RER slope remained significantly lower in obese adolescents (P<0.05). RER trajectories (in relation to %VO2peak and %Wpeak) were significantly different between groups (P<0.001). RERpeak is significantly lowered in obese adolescents. This may have important methodological implications for cardiopulmonary exercise testing in this population.

Seebeck coefficient of synthesized Titanium Dioxide thin film on FTO glass substrate

NASA Astrophysics Data System (ADS)

Usop, R.; Hamed, N. K. A.; Megat Hasnan, M. M. I.; Ikeda, H.; Sabri, M. F. M.; Ahmad, M. K.; Said, S. M.; Salleh, F.

2018-04-01

In order to fabricate a thermoelectric device on glass substrate for harvesting waste heat energy through house appliances, the Seebeck coefficient of translucent TiO2 thin film was investigated. The TiO2 thin film was synthesized by using hydrothermal method with F-SnO2 coated glass as substrate. From scanning electron microscopy analysis, the synthesized TiO2 thin film was found to be in nanometer-scale rod structure with a thickness of 4 µm. The Seebeck coefficient was measured in the temperature range of 300 – 400 K. The Seebeck coefficient is found to be in negative value which shows that synthesized film is an n-type semiconductor material, and is lower than the value of bulk-size material. This reduction in Seebeck coefficient of TiO2 thin film is likely due to the low dimensional effect and the difference of carrier concentration.

Dual-Band Modulation of Visible and Near-Infrared Light Transmittance in an All-Solution-Processed Hybrid Micro-Nano Composite Film.

PubMed

Liang, Xiao; Chen, Mei; Guo, Shumeng; Zhang, Lanying; Li, Fasheng; Yang, Huai

2017-11-22

Smart windows with controllable visible and near-infrared light transmittance can significantly improve the building's energy efficiency and inhabitant comfort. However, most of the current smart window technology cannot achieve the target of ideal solar control. Herein, we present a novel all-solution-processed hybrid micronano composite smart material that have four optical states to separately modulate the visible and NIR light transmittance through voltage and temperature, respectively. This dual-band optical modulation was achieved by constructing a phase-separated polymer framework, which contains the microsized liquid crystals domains with a negative dielectric constant and tungsten-doped vanadium dioxide (W-VO 2 ) nanocrystals (NCs). The film with 2.5 wt % W-VO 2 NCs exhibits transparency at normal condition, and the passage of visible light can be reversibly and actively regulated between 60.8% and 1.3% by external applied voltage. Also, the transmittance of NIR light can be reversibly and passively modulated between 59.4% and 41.2% by temperature. Besides, the film also features easy all-solution processability, fast electro-optical (E-O) response time, high mechanical strength, and long-term stability. The as-prepared film provides new opportunities for next-generation smart window technology, and the proposed strategy is conductive to engineering novel hybrid inorganic-organic functional matters.

The influence of exercise duration at VO2 max on the off-transient pulmonary oxygen uptake phase during high intensity running activity.

PubMed

Billat, V L; Hamard, L; Koralsztein, J P

2002-12-01

The purpose of this study was to examine the influence of time run at maximal oxygen uptake (VO2 max) on the off-transient pulmonary oxygen uptake phase after supra-lactate threshold runs. We hypothesised: 1) that among the velocities eliciting VO2 max there is a velocity threshold from which there is a slow component in the VO2-off transient, and 2) that at this velocity the longer the duration of this time at VO2 max (associated with an accumulated oxygen kinetics since VO2 can not overlap VO2 max), the longer is the off-transient phase of oxygen uptake kinetics. Nine long-distance runners performed five maximal tests on a synthetic track (400 m) while breathing through the COSMED K4b2 portable, telemetric metabolic analyser: i) an incremental test which determined VO2 max, the minimal velocity associated with VO2 max (vVO2 max) and the velocity at the lactate threshold (vLT), ii) and in a random order, four supra-lactate threshold runs performed until exhaustion at vLT + 25, 50, 75 and 100% of the difference between vLT and vVO2 max (vdelta25, vdelta50, vdelta75, vdelta100). At vdelta25, vdelta50 (= 91.0 +/- 0.9% vVO2 max) and vdelta75, an asymmetry was found between the VO2 on (double exponential) and off-transient (mono exponential) phases. Only at vdelta75 there was at positive relationship between the time run at VO2 max (%tlimtot) and the VO2 recovery time constant (Z = 1.8, P = 0.05). In conclusion, this study showed that among the velocities eliciting VO2 max, vdelta75 is the velocity at which the longer the duration of the time at VO2 max, the longer is the off-transient phase of oxygen uptake kinetics. It may be possible that at vdelta50 there is not an accumulated oxygen deficit during the plateau of VO2 at VO2 max and that the duration of the time at VO2 max during the exhaustive runs at vdelta100, could be too short to induce an accumulating oxygen deficit affecting the oxygen recovery.

Comparative study on deposition of fluorine-doped tin dioxide thin films by conventional and ultrasonic spray pyrolysis methods for dye-sensitized solar modules

NASA Astrophysics Data System (ADS)

Icli, Kerem Cagatay; Kocaoglu, Bahadir Can; Ozenbas, Macit

2018-01-01

Fluorine-doped tin dioxide (FTO) thin films were produced via conventional spray pyrolysis and ultrasonic spray pyrolysis (USP) methods using alcohol-based solutions. The prepared films were compared in terms of crystal structure, morphology, surface roughness, visible light transmittance, and electronic properties. Upon investigation of the grain structures and morphologies, the films prepared using ultrasonic spray method provided relatively larger grains and due to this condition, carrier mobilities of these films exhibited slightly higher values. Dye-sensitized solar cells and 10×10 cm modules were prepared using commercially available and USP-deposited FTO/glass substrates, and solar performances were compared. It is observed that there exists no remarkable efficiency difference for both cells and modules, where module efficiency of the USP-deposited FTO glass substrates is 3.06% compared to commercial substrate giving 2.85% under identical conditions. We demonstrated that USP deposition is a low cost and versatile method of depositing commercial quality FTO thin films on large substrates employed in large area dye-sensitized solar modules or other thin film technologies.

Aqueous citrato-oxovanadate(IV) precursor solutions for VO2: synthesis, spectroscopic investigation and thermal analysis.

PubMed

Peys, Nick; Adriaensens, Peter; Van Doorslaer, Sabine; Gielis, Sven; Peeters, Ellen; De Dobbelaere, Christopher; De Gendt, Stefan; Hardy, An; Van Bael, Marlies K

2014-09-07

An aqueous precursor solution, containing citrato-VO(2+) complexes, is synthesized for the formation of monoclinic VO2. With regard to the decomposition of the VO(2+) complexes towards vanadium oxide formation, it is important to gain insights into the chemical structure and transformations of the precursor during synthesis and thermal treatment. Hence, the conversion of the cyclic [V4O12](4-) ion to the VO(2+) ion in aqueous solution, using oxalic acid as an acidifier and a reducing agent, is studied by (51)Vanadium nuclear magnetic resonance spectroscopy. The citrate complexation of this VO(2+) ion and the differentiation between a solution containing citrato-oxalato-VO(2+) and citrato-VO(2+) complexes are studied by electron paramagnetic resonance and Fourier transform infra-red spectroscopy. In both solutions, the VO(2+) containing complex is mononuclear and has a distorted octahedral geometry with a fourfold R-CO2(-) ligation at the equatorial positions and likely a fifth R-CO2(-) ligation at the axial position. Small differences in the thermal decomposition pathway between the gel containing citrato-oxalato-VO(2+) complexes and the oxalate-free gel containing citrato-VO(2+) complexes are observed between 150 and 200 °C in air and are assigned to the presence of (NH4)2C2O4 in the citrato-oxalato-VO(2+) solution. Both precursor solutions are successfully used for the formation of crystalline vanadium oxide nanostructures on SiO2, after thermal annealing at 500 °C in a 0.1% O2 atmosphere. However, the citrato-oxalato-VO(2+) and the oxalate-free citrato-VO(2+) solution result in the formation of monoclinic V6O13 and monoclinic VO2, respectively.

Vanadyl (IV) and vanadate (V) binding to selected endogenous phosphate, carboxyl, and amino ligands; calculations of cellular vanadium species distribution.

PubMed

Nechay, B R; Nanninga, L B; Nechay, P S

1986-11-15

Vanadium enters cells as vanadate (V) where it is reduced to vanadyl (IV), VO2+. Vanadate species at plasma pH, H2VO4-, and HVO4(2-) are referred to as VO3-. To gain an insight into the subcellular vanadium distribution we measured the binding of VO3- and VO2+ to extra- and intracellular ligands, and calculated free and bound fractions of these ions for expected in vivo conditions. The association constants (K) were determined by the pH shift caused by an addition of VOSO4 or NaVO3 to individual ligand solutions at 20 degrees C and a pH equal to the pK of the reactive groups. The pk's for binding of VO2+ were ATP, 5.9; ADP, 5.5; AMP, 5.1; Pi 4.3; creatine phosphate (CP), 3.6; glutamic acid, 3.4; aspartic acid, 3.1; human serum albumin, 3.1; glutathione, 2.7; ascorbic acid, 3.3; citric acid, 4.0. The pk of VO3- and human serum albumin was 3.3 and of that VO3- and glutathione was 4.2. VO3- did not bind to ATP, even via Mg2+ or Ca2+ bridges. We calculated that in cells approximately 1% of total VO2+ is unbound, which is 10(-10)-10(-9) M since published values for total vanadium (mainly VO2+) concentrations in tissues are on the order of 10(-8)-10(-7) M. Free VO2+ may be even less because of binding to additional ligands not considered and due to spontaneous hydrolysis to VOOH+ and VO(OH)2(2+) at intracellular pH. The binding of VO2+ to each ligand was corrected for presence of multiple ligands and competition by H+, K+, and Mg2+. In cells with no CP, up to 70% of VO2+ is bound to phosphates and up to 29% to proteins; in cells with 30 mM CP (as in muscle), approximately 95% is bound to phosphates (CP binds up to 61% of total VO2+) and approximately 4% to proteins; in cells with 2 mM ascorbic acid (as in brain), the vitamin binds approximately 3% of total VO2+. These binding values apply for the total VO2+ concentration range of 10(-8)-10(-5) M. The intracellular binding and a reducing environment protect the freshly reduced VO2+ from oxidation to VO3- that would otherwise occur at neutral pH. This strong affinity of VO2+ primarily for phosphates also explains the mechanism for the intracellular accumulation of vanadium which is a factor in previously observed transport of VO3- into cells.(ABSTRACT TRUNCATED AT 400 WORDS)

Exertional oxygen uptake kinetics: a stamen of stamina?

PubMed

Whipp, Brian J; Rossiter, H B; Ward, S A

2002-04-01

The fundamental pulmonary O(2) uptake (.VO(2)) response to moderate, constant-load exercise can be characterized as (d.VO(2)/dt)(tau)+Delta.VO(2) (t)=Delta.VO(2SS) where Delta.VO(2SS) is the steady-state response, and tau is the time constant, with the .VO(2) kinetics reflecting intramuscular O(2) uptake (.QO(2)) kinetics, to within 10%. The role of phosphocreatine (PCr) turnover in .QO(2) control can be explored using (31)P-MR spectroscopy, simultaneously with .VO(2). Although tau.VO(2) and tauPCr vary widely among subjects (approx. 20-65 s), they are not significantly different from each other, either at the on- or off-transient. A caveat to interpreting the "well-fit" exponential is that numerous units of similar Delta.VO(2SS) but with a wide tau distribution can also yield a .VO(2) response with an apparent single tau. This tau is, significantly, inversely correlated with lactate threshold and .VO(2max)(but is poorly predictive; a frail stamen, therefore), consistent with tau not characterizing a compartment with uniform kinetics. At higher intensities, the fundamental kinetics become supplemented with a slowly-developing phase, setting .VO(2)on a trajectory towards maximum .VO(2). This slow component is also demonstrable in Delta[PCr]: the decreased efficiency thereby reflecting a predominantly high phosphate-cost of force production rather than a high O(2)-cost of phosphate production. We also propose that the O(2)-deficit for the slow-component is more likely to reflect shifting Delta.VO(2SS) rather than a single one with a single tau.

Integration of the physiological factors determining endurance performance ability.

PubMed

Coyle, E F

1995-01-01

This model is used to understand the interrelationships of the physiological factors determining endurance performance ability during prolonged exercise. Early studies found that marathon runners maintain a velocity in competition that corresponds to the intensity at which lactate begins to accumulate in blood and muscle [7, 8, 19]. From this observation, the concept developed that this blood lactate threshold (LT Vo2) reflects the degree of muscular stress, glycogenolysis and fatigue. However, it was not clear whether the lactate accumulation was a result of cardiovascular limitations linked to oxygen delivery, as reflected by Vo2max [54], as opposed to metabolic factors in the exercising muscle related to the extent to which mitochondrial respiration is disturbed to maintain a given rate of O2 consumption [29, 30]. Two studies were performed to determine whether LT Vo2 was tightly coupled to Vo2max. In one study, endurance-trained ischemic heart disease patients were observed to possess a Vo2max that was 18% below that of normal master athletes who followed the patient's training program and who displayed the same performance ability as the patients. Both the patients and the normal men displayed an identical LT Vo2 (i.e., 37 ml/kg/min) (Fig. 2.5). Therefore, performance was determined primarily by LT Vo2 instead of Vo2max in this situation, albeit with abnormal subjects. In a second study we assembled two groups of competitive cyclists who were identical in Vo2max but differed by having a high or low LT Vo2 (82% vs. 66% Vo2max) [13]. When cycling at 80-88% Vo2max, the low LT group displayed more than a 2-fold higher rate of muscle glycogen use and blood lactate concentration, and as a result were able to exercise only one-half as long as the high LT group. Performance time for a given Vo2 was clearly related to LT Vo2 instead of Vo2max (Fig. 2.6). This is not to say that Vo2max plays no role in determining LT Vo2, because as in heart disease patients, it clearly sets the upper limit. Indeed, we have seen that much of the variance (i.e., 31-72%) in LT Vo2 is related to Vo2max. (Fig. 2.11.) However, improvements in performance after the first 2-3 yr of intense training are associated with improvements in LT Vo2, whereas Vo2max generally increases very little thereafter (Table 2.3). The next question concerns the factors responsible for further increases in LT Vo2 and Performance. Another major factor determining LT Vo2 is the muscle's Aerobic Enzyme Activity or mitochondrial respiratory capacity, as discussed in previous reviews [29, 30].(ABSTRACT TRUNCATED AT 400 WORDS)

Effect of limb cooling on peripheral and global oxygen consumption in neonates

PubMed Central

Hassan, I; Wickramasinghe, Y; Spencer, S

2003-01-01

Aim: To evaluate peripheral oxygen consumption (VO2) measurements using near infrared spectroscopy (NIRS) with arterial occlusion in healthy term neonates by studying the effect of limb cooling on peripheral and global VO2. Subjects and methods: Twenty two healthy term neonates were studied. Peripheral VO2 was measured by NIRS using arterial occlusion and measurement of the oxyhaemoglobin (HbO2) decrement slope. Global VO2 was measured by open circuit calorimetry. Global and peripheral VO2 was measured in each neonate before and after limb cooling. Results: In 10 neonates, a fall in forearm temperature of 2.2°C (mild cooling) decreased forearm VO2 by 19.6% (p < 0.01). Global VO2 did not change. In 12 neonates, a fall in forearm temperature of 4°C (moderate cooling) decreased forearm VO2 by 34.7% (p < 0.01). Global VO2 increased by 17.6% (p < 0.05). Conclusions: The NIRS arterial occlusion method is able to measure changes in peripheral VO2 induced by limb cooling. The changes are more pronounced with moderate limb cooling when a concomitant rise in global VO2 is observed. Change in peripheral temperature must be taken into consideration in the interpretation of peripheral VO2 measurements in neonates. PMID:12598504

Effect of limb cooling on peripheral and global oxygen consumption in neonates.

PubMed

Hassan, I A-A; Wickramasinghe, Y A; Spencer, S A

2003-03-01

To evaluate peripheral oxygen consumption (VO(2)) measurements using near infrared spectroscopy (NIRS) with arterial occlusion in healthy term neonates by studying the effect of limb cooling on peripheral and global VO(2). Twenty two healthy term neonates were studied. Peripheral VO(2) was measured by NIRS using arterial occlusion and measurement of the oxyhaemoglobin (HbO(2)) decrement slope. Global VO(2) was measured by open circuit calorimetry. Global and peripheral VO(2) was measured in each neonate before and after limb cooling. In 10 neonates, a fall in forearm temperature of 2.2 degrees C (mild cooling) decreased forearm VO(2) by 19.6% (p < 0.01). Global VO(2) did not change. In 12 neonates, a fall in forearm temperature of 4 degrees C (moderate cooling) decreased forearm VO(2) by 34.7% (p < 0.01). Global VO(2) increased by 17.6% (p < 0.05). The NIRS arterial occlusion method is able to measure changes in peripheral VO(2) induced by limb cooling. The changes are more pronounced with moderate limb cooling when a concomitant rise in global VO(2) is observed. Change in peripheral temperature must be taken into consideration in the interpretation of peripheral VO(2) measurements in neonates.

Prognostic value of cardiopulmonary exercise testing in heart failure with preserved ejection fraction. The Henry Ford HospITal CardioPulmonary EXercise Testing (FIT-CPX) project.

PubMed

Shafiq, Ali; Brawner, Clinton A; Aldred, Heather A; Lewis, Barry; Williams, Celeste T; Tita, Christina; Schairer, John R; Ehrman, Jonathan K; Velez, Mauricio; Selektor, Yelena; Lanfear, David E; Keteyian, Steven J

2016-04-01

Although cardiopulmonary exercise (CPX) testing in patients with heart failure and reduced ejection fraction is well established, there are limited data on the value of CPX variables in patients with HF and preserved ejection fraction (HFpEF). We sought to determine the prognostic value of select CPX measures in patients with HFpEF. This was a retrospective analysis of patients with HFpEF (ejection fraction ≥ 50%) who performed a CPX test between 1997 and 2010. Selected CPX variables included peak oxygen uptake (VO2), percent predicted maximum oxygen uptake (ppMVO2), minute ventilation to carbon dioxide production slope (VE/VCO2 slope) and exercise oscillatory ventilation (EOV). Separate Cox regression analyses were performed to assess the relationship between each CPX variable and a composite outcome of all-cause mortality or cardiac transplant. We identified 173 HFpEF patients (45% women, 58% non-white, age 54 ± 14 years) with complete CPX data. During a median follow-up of 5.2 years, there were 42 deaths and 5 cardiac transplants. The 1-, 3-, and 5-year cumulative event-free survival was 96%, 90%, and 82%, respectively. Based on the Wald statistic from the Cox regression analyses adjusted for age, sex, and β-blockade therapy, ppMVO2 was the strongest predictor of the end point (Wald χ(2) = 15.0, hazard ratio per 10%, P < .001), followed by peak VO2 (Wald χ(2) = 11.8, P = .001). VE/VCO2 slope (Wald χ(2)= 0.4, P = .54) and EOV (Wald χ(2) = 0.15, P = .70) had no significant association to the composite outcome. These data support the prognostic utility of peak VO2 and ppMVO2 in patients with HFpEF. Additional studies are needed to define optimal cut points to identify low- and high-risk patients. Copyright © 2016 Elsevier Inc. All rights reserved.

Optically imprinted reconfigurable photonic elements in a VO{sub 2} nanocomposite

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jostmeier, Thorben; Betz, Markus; Zimmer, Johannes

We investigate the optical and thermal hysteresis of single-domain vanadium dioxide nanocrystals fabricated by ion beam synthesis in a fused silica matrix. The nanocrystals exhibit a giant hysteresis, which permits to optically generate a long-time stable supercooled metallic phase persistent down to practically room temperature. Spatial patterns of supercooled and insulating nanocrystals feature a large dielectric contrast, in particular, for telecom wavelengths. We utilize this contrast to optically imprint reconfigurable photonic elements comprising diffraction gratings as well as on- and off-axis zone plates. The structures allow for highly repetitive (>10{sup 4}) cycling through the phase transition without structural damage.

Difficult colonoscopy: air, carbon dioxide, or water insufflation?

PubMed Central

Pandey, Vikas; Patel, Ruchir; Poddar, Prateik; Phadke, Aniruddha; Ingle, Meghraj; Sawant, Prabha

2018-01-01

Background/Aims This study aimed to compare tolerance to air, carbon dioxide, or water insufflation in patients with anticipated difficult colonoscopy (young, thin, obese individuals, and patients with prior abdominal surgery or irradiation). Methods Patients with body mass index (BMI) less than 18 kg/m2 or more than 30 kg/m2, or who had undergone previous abdominal or pelvic surgeries were randomized to air, carbon dioxide, or water insufflation during colonoscopy. The primary endpoint was cecal intubation with mild pain (less than 5 on visual analogue scale [VAS]), without use of sedation. Results The primary end point was achieved in 32.7%, 43.8%, and 84.9% of cases with air, carbon dioxide and water insufflation (P<0.001). The mean pain scores were 5.17, 4.72, and 3.93 on the VAS for air, carbon dioxide, and water insufflation (P<0.001). The cecal intubation rate or procedure time did not differ significantly between the 3 groups. Conclusions Water insufflation was superior to air or carbon dioxide for pain tolerance. This was seen in the subgroups with BMI <18 kg/m2 and the post-surgical group, but not in the group with BMI >30 kg/m2. PMID:29743844

Difficult colonoscopy: air, carbon dioxide, or water insufflation?

PubMed

Chaubal, Alisha; Pandey, Vikas; Patel, Ruchir; Poddar, Prateik; Phadke, Aniruddha; Ingle, Meghraj; Sawant, Prabha

2018-04-01

This study aimed to compare tolerance to air, carbon dioxide, or water insufflation in patients with anticipated difficult colonoscopy (young, thin, obese individuals, and patients with prior abdominal surgery or irradiation). Patients with body mass index (BMI) less than 18 kg/m 2 or more than 30 kg/m 2 , or who had undergone previous abdominal or pelvic surgeries were randomized to air, carbon dioxide, or water insufflation during colonoscopy. The primary endpoint was cecal intubation with mild pain (less than 5 on visual analogue scale [VAS]), without use of sedation. The primary end point was achieved in 32.7%, 43.8%, and 84.9% of cases with air, carbon dioxide and water insufflation ( P <0.001). The mean pain scores were 5.17, 4.72, and 3.93 on the VAS for air, carbon dioxide, and water insufflation ( P <0.001). The cecal intubation rate or procedure time did not differ significantly between the 3 groups. Water insufflation was superior to air or carbon dioxide for pain tolerance. This was seen in the subgroups with BMI <18 kg/m 2 and the post-surgical group, but not in the group with BMI >30 kg/m 2 .

IR studies of the impact of Ge doping on the successive conversion of VOn defects in Czochralski-Si containing carbon

NASA Astrophysics Data System (ADS)

Londos, C. A.; Andrianakis, A.; Sgourou, E. N.; Emtsev, V. V.; Ohyama, H.

2011-02-01

We report infrared absorption studies of oxygen-related defects in electron-irradiated Ge-doped Czochralski-Si. Our investigation was mainly focused on the reaction channel leading to the formation of VOn (1≤n≤6) defects. The VOn defects form mainly upon annealing, as a result of the successive aggregation of oxygen atoms in the initial VO defect produced by the irradiation: (VO+Oi→VO2+Oi→VO3+Oi→VO4,…). It was found that the ratio of the conversion of VOn to VOn+1 defects is sensitive to the Ge content of the material. In particular, the ratio of the conversion of the VO to the VO2 defects was found to decrease with the increase in Ge concentration of the samples, although the opposite trend was observed for the VO3 to VO4 conversion. However, the VO2 to VO3 conversion changes only slightly with Ge content, being practically unaffected for Ge concentrations up to 2×1020 cm-3. In the case of VO2 formation, the phenomenon was attributed to the elastic strains induced in the lattice due to the Ge presence which affects the balance between the reactions VO+Oi→VO2, VO+SiI→Oi, mainly involved in the decay of the VO and the growth of the VO2 defects. In the case of VO4 formation, the phenomenon was discussed by taking into account the enhancement of the diffusivity of the Oi atoms in the Ge-doped Si, which could lead to an enhancement of the rate of the reaction VO3+Oi→VO4. For the VO3 formation this effect is practically negligible due to the fact that at the temperatures of VO2 to VO3 conversion oxygen diffusivity is quite small. The exhibited behavior in the conversion of the VOn to VOn+1 defects (n=1,2,3) was similar in Ge-doped samples with low carbon content ([Cs]<2×1016 cm-3) and in Ge-doped samples with high carbon content ([Cs]≥1×1017 cm-3). The impact of C as well as its role in the conversion efficiency of VO to VO2 was studied by comparing the spectra in low carbon and high carbon Ge free Si material. Furthermore, a pair of bands at (1037,1051 cm-1) was attributed to the VO5 defect. The origin of another pair of bands (967,1005 cm-1) was discussed and tentatively correlated with a VOnCs structure. The role of Ge and C in the formation of the latter two pairs of bands was discussed.

A novel inorganic precipitation-peptization method for VO2 sol and VO2 nanoparticles preparation: Synthesis, characterization and mechanism.

PubMed

Li, Yao; Jiang, Peng; Xiang, Wei; Ran, Fanyong; Cao, Wenbin

2016-01-15

In this paper, a simple, safe and cost-saving precipitation-peptization method was proposed to prepare VO2 sol by using inorganic VOSO4-NH3⋅H2O-H2O2 reactants system in air under room temperature. In this process, VOSO4 was firstly precipitated to form VO(OH)2, then monometallic species of VO(O2)(OH)(-) were formed through the coordination between VO(OH)2 and H2O2. The rearrangement of VO(O2)(OH)(-) in a nonplanar pattern and intermolecular condensation reactions result in multinuclear species. Finally, VO2 sol is prepared through the condensation reactions between the multinuclear species. After drying the obtained sol at 40°C, VO2 xerogel exhibiting monoclinic crystal structure with the space group of C2/m was prepared. The crystal structure of VO2 nanoparticles was transferred to monoclinic crystal structure with the space group of P21/c (VO2(M)) by annealing the xerogel at 550°C. Both XRD and TEM analysis indicated that the nanoparticles possess good crystallinity with crystallite size of 34.5nm as estimated by Scherrer's method. These results suggest that the VO2 sol has been prepared successfully through the proposed simple method. Copyright © 2015 Elsevier Inc. All rights reserved.

Selective UV–O3 treatment for indium zinc oxide thin film transistors with solution-based multiple active layer

NASA Astrophysics Data System (ADS)

Kim, Yu-Jung; Jeong, Jun-Kyo; Park, Jung-Hyun; Jeong, Byung-Jun; Lee, Hi-Deok; Lee, Ga-Won

2018-06-01

In this study, a method to control the electrical performance of solution-based indium zinc oxide (IZO) thin film transistors (TFTs) is proposed by ultraviolet–ozone (UV–O3) treatment on the selective layer during multiple IZO active layer depositions. The IZO film is composed of triple layers formed by spin coating and UV–O3 treatment only on the first layer or last layer. The IZO films are compared by X-ray photoelectron spectroscopy, and the results show that the atomic ratio of oxygen vacancy (VO) increases in the UV–O3 treatment on the first layer, while it decreases on last layer. The device characteristics of the bottom gated structure are also improved in the UV–O3 treatment on the first layer. This indicates that the selective UV–O3 treatment in a multi-stacking active layer is an effective method to optimize TFT properties by controlling the amount of VO in the IZO interface and surface independently.

Effect of a prior intermittent run at vVO2max on oxygen kinetics during an all-out severe run in humans.

PubMed

Billat, V L; Bocquet, V; Slawinski, J; Laffite, L; Demarle, A; Chassaing, P; Koralsztein, J P

2000-09-01

The purpose of this study was to examine the influence of prior intermittent running at VO2max on oxygen kinetics during a continuous severe intensity run and the time spent at VO2max. Eight long-distance runners performed three maximal tests on a synthetic track (400 m) whilst breathing through the COSMED K4 portable telemetric metabolic analyser: i) an incremental test which determined velocity at the lactate threshold (vLT), VO2max and velocity associated with VO2max (vVO2max), ii) a continuous severe intensity run at vLT+50% (vdelta50) of the difference between vLT and vVO2max (91.3+/-1.6% VO2max)preceded by a light continuous 20 minute run at 50% of vVO2max (light warm-up), iii) the same continuous severe intensity run at vdelta50 with a prior interval training exercise (hard warm-up) of repeated hard running bouts performed at 100% of vVO2max and light running at 50% of vVO2max (of 30 seconds each) performed until exhaustion (on average 19+/-5 min with 19+/-5 interval repetitions). This hard warm-up speeded the VO2 kinetics: the time constant was reduced by 45% (28+/-7 sec vs 51+/-37 sec) and the slow component of VO2 (deltaVO2 6-3 min) was deleted (-143+/-271 ml x min(-1) vs 291+/-153 ml x min(-1)). In conclusion, despite a significantly lower total run time at vdelta50 (6 min 19+/-0) min 17 vs 8 min 20+/-1 min 45, p=0.02) after the intermittent warm-up at VO2max, the time spent specifically at VO2max in the severe continuous run at vdelta50 was not significantly different.

Surface and microstructural properties of photocatalytic cements for pavement applications.

DOT National Transportation Integrated Search

2016-10-01

Thin concrete inlays incorporating flowable fibrous concrete (FFC) mix designs as well as titanium dioxide (TiO2)- containing photocatalytic cements are a promising pavement preservation solution. These multi-functional inlays offer enhanced construc...

Ventilatory threshold may be a more specific measure of aerobic capacity than peak oxygen consumption rate in persons with stroke.

PubMed

Boyne, Pierce; Reisman, Darcy; Brian, Michael; Barney, Brian; Franke, Ava; Carl, Daniel; Khoury, Jane; Dunning, Kari

2017-03-01

After stroke, aerobic deconditioning can have a profound impact on daily activities. This is usually measured by the peak oxygen consumption rate achieved during exercise testing (VO2-peak). However, VO2-peak may be distorted by motor function. The oxygen uptake efficiency slope (OUES) and VO2 at the ventilatory threshold (VO2-VT) could more specifically assess aerobic capacity after stroke, but this has not been tested. To assess the differential influence of motor function on three measures of aerobic capacity (VO2-peak, OUES, and VO2-VT) and to evaluate the inter-rater reliability of VO2-VT determination post-stroke. Among 59 persons with chronic stroke, cross-sectional correlations with motor function (comfortable gait speed [CGS] and lower extremity Fugl-Meyer [LEFM]) were compared between the different aerobic capacity measures, after adjustment for covariates, in order to isolate any distorting effect of motor function. Reliability of VO2-VT determination between three raters was assessed with intra-class correlation (ICC). CGS was moderately correlated with VO2-peak (r = 0.52, p < 0.0001) and weakly correlated with OUES (r = 0.41, p = 0.002) and VO2-VT (r = 0.37, p = 0.01). LEFM was weakly correlated with VO2-peak (r = 0.26, p = 0.055) and very weakly correlated with OUES (r = 0.19, p = 0.17) and VO2-VT (r = 0.14, p = 0.31). Compared to VO2-peak, VO2-VT was significantly less correlated with CGS (r difference = -0.16, p = 0.02). Inter-rater reliability of VO2-VT determination was high (ICC: 0.93, 95% CI: 0.89-0.96). Motor dysfunction appears to artificially lower measured aerobic capacity. VO2-VT seemed to be less distorted than VO2-peak and had good inter-rater reliability, so it may provide more specific assessment of aerobic capacity post-stroke.

Influence of aquatic training on the motor performance of patients with haemophilic arthropathy.

PubMed

Vallejo, L; Pardo, A; Gomis, M; Gallach, J E; Pérez, S; Querol, F

2010-01-01

Thirteen patients with haemophilia A took part in this study voluntarily. They underwent an aquatic training programme over a 9-week period (27 sessions; three sessions per week; 1 h per session). Their motor performance was assessed by the following cardio-respiratory and mechanical variables before and after the training programme: oxygen uptake (VO(2), mL min(-1)), relative oxygen uptake (rel VO(2), mL min(-1).kg(-1)), carbon dioxide (CO(2), mL min(-1)), respiratory quotient (R), heart rate (bpm) and the distance covered in 12 min (the Cooper test, m). Nine patients successfully completed the intervention and measurement protocols without bleeding or other adverse events. After the proposed training programme, significant differences between the pre-test and post-test were observed. Patients' aerobic capacity increased considerably, and their oxygen uptake improved by 51.51% (P < 0.05), while their relative oxygen uptake went up by 37.73% (P < 0.05). Their mechanical capacity also increased considerably (14.68%, P < 0.01). Our results suggest that 27 specially designed aquatic training sessions for our patients with haemophilia A had a positive effect on their motor performance and considerably improved their aerobic and mechanical capacity without causing adverse effects.

Effects of body position on exercise capacity and pulmonary vascular pressure-flow relationships.

PubMed

Forton, Kevin; Motoji, Yoshiki; Deboeck, Gael; Faoro, Vitalie; Naeije, Robert

2016-11-01

There has been revival of interest in exercise testing of the pulmonary circulation for the diagnosis of pulmonary vascular disease, but there still is uncertainty about body position and the most relevant measurements. Doppler echocardiography pulmonary hemodynamic measurements were performed at progressively increased workloads in 26 healthy adult volunteers in supine, semirecumbent, and upright positions that were randomly assigned at 24-h intervals. Mean pulmonary artery pressure (mPAP) was estimated from the maximum tricuspid regurgitation jet velocity. Cardiac output was calculated from the left ventricular outflow velocity-time integral. Pulmonary vascular distensibility α-index, the percent change of vessel diameter per millimeter mercury of mPAP, was calculated from multipoint mPAP-cardiac output plots. Body position did not affect maximum oxygen uptake (Vo 2max ), maximum respiratory exchange ratio, ventilatory equivalent for carbon dioxide, or slope of mPAP-cardiac output relationships, which was on average of 1.5 ± 0.4 mmHg·l -1 ·min -1 Maximum mPAP, cardiac output, and total pulmonary vascular resistance were, respectively, 34 ± 4 mmHg, 18 ± 3 l/min, and 1.9 ± 0.3 Wood units. However, the semirecumbent position was associated with a 10% decrease in maximum workload. Furthermore, cardiac output-workload or cardiac output-Vo 2 relationships were nonlinear and variable. These results suggest that body position does not affect maximum exercise testing of the pulmonary circulation when results are expressed as mPAP-cardiac output or maximum total pulmonary vascular resistance. Maximum workload is decreased in semirecumbent compared with upright exercise. Workload or Vo 2 cannot reliably be used as surrogates for cardiac output. Copyright © 2016 the American Physiological Society.

Processing Method for Creating Ultra-Thin Lead Zirconate Titanate (PZT) Films Via Chemical Solution Deposition

DTIC Science & Technology

2008-12-01

n-propoxide and titanium isopropoxide , were measured with a graduated auto pipet and combined with 45 mL of 2-MOE in a 125 mL flask. The solution...nitrogen (N2). This anneal procedure was used to remove trapped hydrogen from the thin film. Following the anneal, a bi-layer of titanium (Ti) and...dioxide Ti titanium 10 NO. OF COPIES ORGANIZATION 1 ADMNSTR ELEC DEFNS TECHL INFO CTR ATTN DTIC OCP 8725 JOHN J KINGMAN RD STE

Thinning and opening of carbon nanotubes by oxidation using carbon dioxide

NASA Astrophysics Data System (ADS)

Tsang, S. C.; Harris, P. J. F.; Green, M. L. H.

1993-04-01

THE discovery1 and bulk synthesis2 of carbon nanotubes has stimulated great interest. It has been suggested that these structures may have useful electronic3-5 and mechanical6 properties, and these might be modified by introducing foreign materials into the nanotubes. But the tubes are invariably capped at the ends. Ajayan and lijima7 have succeeded in drawing molten material (lead or one of its compounds) into the tubes by heating them in the presence of lead and oxygen; less than 1% of the tubes in the sample studied could be filled in this way. Here we report that heating in carbon dioxide gas can result in the partial or complete destruction of the tube caps and stripping of the outer layers to produce thinner tubes. In some cases, we have thinned the extremity of tubes to a single layer. The opened tubes can be regarded as nanoscale test-tubes for adsorption of other molecules, and this controlled method of thinning may allow studies of the properties of single tubes.

Significance of the velocity at VO2max and time to exhaustion at this velocity.

PubMed

Billat, L V; Koralsztein, J P

1996-08-01

In 1923, Hill and Lupton pointed out that for Hill himself, 'the rate of oxygen intake due to exercise increases as speed increases, reaching a maximum for the speeds beyond about 256 m/min. At this particular speed, for which no further increases in O2 intake can occur, the heart, lungs, circulation, and the diffusion of oxygen to the active muscle-fibres have attained their maximum activity. At higher speeds the requirement of the body for oxygen is far higher but cannot be satisfied, and the oxygen debt continuously increases'. In 1975, this minimal velocity which elicits maximal oxygen uptake (VO2max) was called 'critical speed' and was used to measure the maximal aerobic capacity (max Eox), i.e. the total oxygen consumed at VO2max. This should not be confused with the term 'critical power' which is closes to the power output at the 'lactate threshold'. In 1984, the term 'velocity at VO2max' and the abbreviation 'vVO2max' was introduced. It was reported that vVO2max is a useful variable that combines VO2max and economy into a single factor which can identify aerobic differences between various runners or categories of runners. vVO2max explained individual differences in performance that VO2max or running economy alone did not. Following that, the concept of a maximal aerobic running velocity (Vamax in m/sec) was formulated. This was a running velocity at which VO2max occurred and was calculated as the ratio between VO2max (ml/kg/min) minus oxygen consumption at rest, and the energy cost of running (ml/kg/sec). There are many ways to determine the velocity associated with VO2max making it difficult to compare maintenance times. In fact, the time to exhaustion (tlim) at vVO2max is reproducible in an individual, however, there is a great variability among individuals with a low coefficient of variation for vVO2max. For an average value of about 6 minutes, the coefficient of variation is about 25%. It seems that the lactate threshold which is correlated with the tlim at vVO2max can explain this difference among individuals, the role of the anaerobic contribution being significant. An inverse relationship has been found between tlim at vVO2max and VO2max, and a positive one between vVO2max and the velocity at the lactate threshold expressed as a fraction of vVO2max. These results are similar for different sports (e.g. running, cycling, kayaking, swimming). It seems that the real time spent at VO2max is significantly different from an exhaustive run at a velocity close to vVO2max (105% vVO2max). However, the minimal velocity which elicits VO2max, and the tlim at this velocity appear to convey valuable information when analysing a runner's performance over 1500m to a marathon.

Validation of cardiac output using real-time measurement of oxygen consumption during cardiac catheterization in children under 3 years of age.

PubMed

Seckeler, Michael D; Hirsch, Russel; Beekman, Robert H; Goldstein, Bryan H

2014-01-01

To validate a method for determination of cardiac index (CI) using real-time measurement of oxygen consumption (VO2 ) in young children undergoing cardiac catheterization. Retrospective review comparing thermodilution cardiac index (TDCI) to CI calculated by the Fick equation using real-time measured VO2 (RT-VO2 ) and VO2 derived from 2 published predictive equations. Paired t-test and Bland-Altman analysis were used to compare TDCI to Fick CI. A survey to ascertain pediatric cardiac catheterization practices regarding VO2 determination was also conducted. Quaternary care children's hospital cardiac catheterization laboratory. Children <3 years old with structurally normal hearts undergoing cardiac catheterization under general anesthesia with at least one set of contemporaneous TDCI and RT-VO2 measurements. Thirty-six paired measurements of TDCI and RT-VO2 were made in 27 patients over a 2-year period. Indications for catheterization included congenital diaphragmatic hernia postrepair (n = 13), heart disease post-orthotopic heart transplant (n = 13), and suspected cardiomyopathy (n = 1). Mean age was 21.5 ± 8 months; median weight was 9.9 kg (IQR 8.57, 12.2). RT-VO2 was higher than VO2 predicted by the LaFarge equation (190 ± 31 vs. 173.8 ± 12.8 mL/min/m(2), P < .001), but there was no difference between TDCI and Fick CI calculated using VO2 from any method. Bland-Altman analysis showed excellent agreement between TDCI and Fick CI using RT-VO2 and VO2 predicted by the Lundell equation; Fick CI using VO2 predicted by the LaFarge equation showed fair agreement with TDCI. In children <3 years with a structurally normal heart, RT-VO2 generates highly accurate determinations of Fick CI as compared with TDCI. Additionally, in this population, VO2 derived from the LaFarge and Lundell equations generates accurate Fick CI compared with TDCI. Future studies are needed to identify factors associated with inaccurate VO2 generated from these predictive equations. © 2013 Wiley Periodicals, Inc.

Synthesis and Characterization of Titanium Dioxide Thin Film for Sensor Applications

NASA Astrophysics Data System (ADS)

Latha, H. K. E.; Lalithamba, H. S.

2018-03-01

Titanium oxide (TiO2) nanoparticles (metal oxide semiconductor) are successfully synthesized using hydrothermal method for sensor application. Titanium dioxide and Sodium hydroxide are used as precursors. These reactants are mixed and calcinated at 400 °C to produce TiO2 nanoparticles. The crystalline structure, morphology of synthesized TiO2 nanoparticles are studied using x-ray diffraction (XRD), Fourier Transform Infrared (FTIR) analysis and scanning electron microscopy (SEM). XRD results revealed that the prepared TiO2 sample is highly crystalline, having Anatase crystal structure. FT-IR spectra peak at 475 cm‑1 indicated characteristic absorption bands of TiO2 nanoparticles. The XRD and FTIR result confirmed the formation of high purity of TiO2 nanoparticles. The SEM image shows that TiO2 nanoparticles prepared in this study are spherical in shape. Synthesized TiO2 nanoparticles are deposited on glass substrate at room temperature using E beam evaporation method to determine gauge factor and found to be 4.7. The deposited TiO2 thin films offer tremendous potential in the applications of electronic and magneto–electric devices.

57Fe CEMS study on dilute metal ions codoped SnO2 thin films prepared by spray pyrolysis

NASA Astrophysics Data System (ADS)

Nomura, Kiyoshi; Koike, Yuya; Nakanishi, Akio

2017-11-01

Dilute Mn-Fe, Co-Fe and V-Fe codoped tin oxide films prepared by spray pyrolysis were characterized by 57Fe conversion electron Mössbauer spectrometry (CEMS) at room temperature (RT) and at 20 K. Two kinds of paramagnetic Fe3+ species were detected at RT; one doublet 1 (D1) with IS = 0.36-0.37 mm/s, QS = 0.69-0.75 mm/s and LW = 0.32-0.40 mm/s, and another doublet 2 (D2) with IS = 0.31-0.35 mm/s QS = 1.16-1.25 mm/s and LW = 0.46-0.52 mm/s. CEMS at 20 K provided more distinguished doublets than at RT. It is found that especially D2 with relatively small IS and large QS values are influenced by other metal ions codoped in SnO2 matrix, whereas D1 with relatively large IS and small QS has the parameters close to the models of Fe-VO1 and Fe-2VO1-Fe models (Nomura et al. Phys. Rev. B 75, 184411 2007; Mudarra Navarro et al. J. Phys. Chem. C 119, 5596-5603 2015).