Architecture and Hardware Design of Lossless Compression Algorithms for Direct-Write Maskless Lithography Systems

DTIC Science & Technology

2010-04-29

magnitude greater than today’s high-definition video coding standards. Moreover, the micromirror devices of maskless lithography are smaller than those...be found in the literature [33]. In this architecture, the optical source flashes on a writer system, which consists of a micromirror array and a...the writer system. Due to the physical dimension constraints of the micromirror array and writer system, an entire wafer can be written in a few

Effects on electron scattering and resist characteristics using assisting underlayers for e-beam direct write lithography

NASA Astrophysics Data System (ADS)

Thrun, Xaver; Choi, Kang-Hoon; Hanisch, Norbert; Hohle, Christoph; Steidel, Katja; Guerrero, Douglas; Figueiro, Thiago; Bartha, Johann W.

2013-03-01

Resist processing for future technology nodes becomes more and more complex. The resist film thickness is getting thinner and hardmask concepts (trilayer) are needed for reproducible etch transfer into the stack. Additional layers between resist and substrate are influencing the electron scattering in e-beam lithography and may also improve sensitivity and resolution. In this study, bare silicon wafers with different assisting underlayers were processed in a 300 mm CMOS manufacturing environment and were exposed on a 50 keV VISTEC SB3050DW variable-shaped electron beam direct writer at Fraunhofer CNT. The underlayers are organic-inorganic hybrid coatings with different metal additives. The negative-tone resist was evaluated in terms of contrast, sensitivity, resolution and LWR/LER as a function of the stack. The interactions between resist and different assisting underlayers on e-beam direct writing will be investigated. These layers could be used to optimize the trade-off among resolution, LWR and sensitivity in future applications.

Fabrication of 2D and 3D photonic structures using laser lithography

NASA Astrophysics Data System (ADS)

Gaso, P.; Jandura, D.; Pudis, D.

2016-12-01

In this paper we demonstrate possibilities of three-dimensional (3D) printing technology based on two photon polymerization. We used three-dimensional dip-in direct-laser-writing (DLW) optical lithography to fabricate 2D and 3D optical structures for optoelectronics and for optical sensing applications. DLW lithography allows us use a non conventional way how to couple light into the waveguide structure. We prepared ring resonator and we investigated its transmission spectral characteristic. We present 3D inverse opal structure from its design to printing and scanning electron microscope (SEM) imaging. Finally, SEM images of some prepared photonic crystal structures were performed.

Non-CAR resists and advanced materials for Massively Parallel E-Beam Direct Write process integration

NASA Astrophysics Data System (ADS)

Pourteau, Marie-Line; Servin, Isabelle; Lepinay, Kévin; Essomba, Cyrille; Dal'Zotto, Bernard; Pradelles, Jonathan; Lattard, Ludovic; Brandt, Pieter; Wieland, Marco

2016-03-01

The emerging Massively Parallel-Electron Beam Direct Write (MP-EBDW) is an attractive high resolution high throughput lithography technology. As previously shown, Chemically Amplified Resists (CARs) meet process/integration specifications in terms of dose-to-size, resolution, contrast, and energy latitude. However, they are still limited by their line width roughness. To overcome this issue, we tested an alternative advanced non-CAR and showed it brings a substantial gain in sensitivity compared to CAR. We also implemented and assessed in-line post-lithographic treatments for roughness mitigation. For outgassing-reduction purpose, a top-coat layer is added to the total process stack. A new generation top-coat was tested and showed improved printing performances compared to the previous product, especially avoiding dark erosion: SEM cross-section showed a straight pattern profile. A spin-coatable charge dissipation layer based on conductive polyaniline has also been tested for conductivity and lithographic performances, and compatibility experiments revealed that the underlying resist type has to be carefully chosen when using this product. Finally, the Process Of Reference (POR) trilayer stack defined for 5 kV multi-e-beam lithography was successfully etched with well opened and straight patterns, and no lithography-etch bias.

Electron-beam lithography for micro and nano-optical applications

NASA Technical Reports Server (NTRS)

Wilson, Daniel W.; Muller, Richard E.; Echternach, Pierre M.

2005-01-01

Direct-write electron-beam lithography has proven to be a powerful technique for fabricating a variety of micro- and nano-optical devices. Binary E-beam lithography is the workhorse technique for fabricating optical devices that require complicated precision nano-scale features. We describe a bi-layer resist system and virtual-mark height measurement for improving the reliability of fabricating binary patterns. Analog E-beam lithography is a newer technique that has found significant application in the fabrication of diffractive optical elements. We describe our techniques for fabricating analog surface-relief profiles in E-beam resist, including some discussion regarding overcoming the problems of resist heating and charging. We also describe a multiple-field-size exposure scheme for suppression of field-stitch induced ghost diffraction orders produced by blazed diffraction gratings on non-flat substrates.

Grayscale photomask fabricated by laser direct writing in metallic nano-films.

PubMed

Guo, Chuan Fei; Cao, Sihai; Jiang, Peng; Fang, Ying; Zhang, Jianming; Fan, Yongtao; Wang, Yongsheng; Xu, Wendong; Zhao, Zhensheng; Liu, Qian

2009-10-26

The grayscale photomask plays a key role in grayscale lithography for creating 3D microstructures like micro-optical elements and MEMS structures, but how to fabricate grayscale masks in a cost-effective way is still a big challenge. Here we present novel low cost grayscale masks created in a two-step method by laser direct writing on Sn nano-films, which demonstrate continuous-tone gray levels depended on writing powers. The mechanism of the gray levels is due to the coexistence of the metal and the oxides formed in a laser-induced thermal process. The photomasks reveal good technical properties in fabricating 3D microstructures for practical applications.

Fabrication of cobalt magnetic nanostructures using atomic force microscope lithography.

PubMed

Chu, Haena; Yun, Seonghun; Lee, Haiwon

2013-12-01

Cobalt nanopatterns are promising assemblies for patterned magnetic storage applications. The fabrication of cobalt magnetic nanostructures on n-tridecylamine x hydrochloride (TDA x HCl) self-assembled monolayer (SAM) modified silicon surfaces using direct writing atomic force microscope (AFM) lithography for localized electrochemical reduction of cobalt ions was demonstrated. The ions were reduced to form metal nanowires along the direction of the electricfield between the AFM tip and the substrate. In this lithography process, TDA x HCI SAMs play an important role in the lithography process for improving the resolution of cobalt nanopatterns by preventing nonspecific reduction of cobalt ions on the unwritten background. Cobalt nanowires and nanodots with width of 225 +/- 26 nm and diameter of 208 +/- 28 nm were successfully fabricated. Platinium-coated polydimethylsiloxane (PDMS) stamp was used fabricating bulk cobalt structures which can be detected by energy dispersive X-ray spectroscopy for element analysis and the physical and magnetic properties of these cobalt nanopatterns were characterized using AFM and magnetic force microscope.

Surface smoothening of the inherent roughness of micro-lenses fabricated with 2-photon lithography

NASA Astrophysics Data System (ADS)

Schift, Helmut; Kirchner, Robert; Chidambaram, Nachiappan; Altana, Mirco

2018-01-01

Two-photon polymerization by direct laser writing enables to write refractive micro-optical elements with sub-μm precision. The trajectories and layering during the direct writing process often result in roughness in the range of the writing increment, which has adverse effects for optical applications. Instead of increasing overlap between adjacent voxels, roughness in the range of 100 nm can be smoothed out by post-processing. For this a method known as TASTE was developed, which allows polishing of surfaces without changing the structural details or the overall shape. It works particularly well with thermoplastic polymers and enables sub-10 nm roughness. The optical quality was confirmed for an array with several 100 microlenses.

Fabrication of 3D surface structures using grayscale lithography

NASA Astrophysics Data System (ADS)

Stilson, Christopher; Pal, Rajan; Coutu, Ronald A.

2014-03-01

The ability to design and develop 3D microstructures is important for microelectromechanical systems (MEMS) fabrication. Previous techniques used to create 3D devices included tedious steps in direct writing and aligning patterns onto a substrate followed by multiple photolithography steps using expensive, customized equipment. Additionally, these techniques restricted batch processing and placed limits on achievable shapes. Gray-scale lithography enables the fabrication of a variety of shapes using a single photolithography step followed by reactive ion etching (RIE). Micromachining 3D silicon structures for MEMS can be accomplished using gray-scale lithography along with dry anisotropic etching. In this study, we investigated: using MATLAB for mask designs; feasibility of using 1 μm Heidelberg mask maker to direct write patterns onto photoresist; using RIE processing to etch patterns into a silicon substrate; and the ability to tailor etch selectivity for precise fabrication. To determine etch rates and to obtain desired etch selectivity, parameters such as gas mixture, gas flow, and electrode power were studied. This process successfully demonstrates the ability to use gray-scale lithography and RIE for use in the study of micro-contacts. These results were used to produce a known engineered non-planer surface for testing micro-contacts. Surface structures are between 5 μm and 20 μm wide with varying depths and slopes based on mask design and etch rate selectivity. The engineered surfaces will provide more insight into contact geometries and failure modes of fixed-fixed micro-contacts.

Direct-Write Laser Grayscale Lithography for Multilayer Lead Zirconate Titanate Thin Films.

PubMed

Benoit, Robert R; Jordan, Delaney M; Smith, Gabriel L; Polcawich, Ronald G; Bedair, Sarah S; Potrepka, Daniel M

2018-05-01

Direct-write laser grayscale lithography has been used to facilitate a single-step patterning technique for multilayer lead zirconate titanate (PZT) thin films. A 2.55- -thick photoresist was patterned with a direct-write laser. The intensity of the laser was varied to create both tiered and sloped structures that are subsequently transferred into multilayer PZT(52/48) stacks using a single Ar ion-mill etch. Traditional processing requires a separate photolithography step and an ion mill etch for each layer of the substrate, which can be costly and time consuming. The novel process allows access to buried electrode layers in the multilayer stack in a single photolithography step. The grayscale process was demonstrated on three 150-mm diameter Si substrates configured with a 0.5- -thick SiO 2 elastic layer, a base electrode of Pt/TiO 2 , and a stack of four PZT(52/48) thin films of either 0.25- thickness per layer or 0.50- thickness per layer, and using either Pt or IrO 2 electrodes above and below each layer. Stacked capacitor structures were patterned and results will be reported on the ferroelectric and electromechanical properties using various wiring configurations and compared to comparable single layer PZT configurations.

Progress and process improvements for multiple electron-beam direct write

NASA Astrophysics Data System (ADS)

Servin, Isabelle; Pourteau, Marie-Line; Pradelles, Jonathan; Essomba, Philippe; Lattard, Ludovic; Brandt, Pieter; Wieland, Marco

2017-06-01

Massively parallel electron beam direct write (MP-EBDW) lithography is a cost-effective patterning solution, complementary to optical lithography, for a variety of applications ranging from 200 to 14 nm. This paper will present last process/integration results to achieve targets for both 28 and 45 nm nodes. For 28 nm node, we mainly focus on line-width roughness (LWR) mitigation by playing with stack, new resist platform and bias design strategy. The lines roughness was reduced by using thicker spin-on-carbon (SOC) hardmask (-14%) or non-chemically amplified (non-CAR) resist with bias writing strategy implementation (-20%). Etch transfer into trilayer has been demonstrated by preserving pattern fidelity and profiles for both CAR and non-CAR resists. For 45 nm node, we demonstrate the electron-beam process integration within optical CMOS flows. Resists based on KrF platform show a full compatibility with multiple stacks to fit with conventional optical flow used for critical layers. Electron-beam resist performances have been optimized to fit the specifications in terms of resolution, energy latitude, LWR and stack compatibility. The patterning process overview showing the latest achievements is mature enough to enable starting the multi-beam technology pre-production mode.

Direct-writing lithography using laser diode beam focused with single elliptical microlens

NASA Astrophysics Data System (ADS)

Hasan, Md. Nazmul; Haque, Muttahid-Ull; Trisno, Jonathan; Lee, Yung-Chun

2015-10-01

A lithography method is proposed for arbitrary patterning using an elliptically diverging laser diode beam focused with a single planoconvex elliptical microlens. Simulations are performed to model the propagation properties of the laser beam and to design the elliptical microlens, which has two different profiles in the x- and y-axis directions. The microlens is fabricated using an excimer laser dragging method and is then attached to the laser diode using double-sided optically cleared adhesive (OCA) tape. Notably, the use of OCA tape removes the need for a complicated alignment procedure and thus significantly reduces the assembly cost. The minimum focused spot of the laser diode beam is investigated by performing single-shot exposure tests on a photoresist (PR) layer. Finally, the practical feasibility of this lithography technique to generate an arbitrary pattern is demonstrated by dotted and continuous features through thin chromium layer deposition on PR and a metal lift-off process. The results show that the minimum feature size for the dotted patterns is around 6.23 μm, while the minimum linewidths for continuous patterns is 6.44 μm. In other words, the proposed focusing technique has significant potential for writing any arbitrary high-resolution pattern for applications like printed circuit board fabrication.

Advanced electric-field scanning probe lithography on molecular resist using active cantilever

NASA Astrophysics Data System (ADS)

Kaestner, Marcus; Aydogan, Cemal; Lipowicz, Hubert-Seweryn; Ivanov, Tzvetan; Lenk, Steve; Ahmad, Ahmad; Angelov, Tihomir; Reum, Alexander; Ishchuk, Valentyn; Atanasov, Ivaylo; Krivoshapkina, Yana; Hofer, Manuel; Holz, Mathias; Rangelow, Ivo W.

2015-03-01

The routine "on demand" fabrication of features smaller than 10 nm opens up new possibilities for the realization of many novel nanoelectronic, NEMS, optical and bio-nanotechnology-based devices. Based on the thermally actuated, piezoresistive cantilever technology we have developed a first prototype of a scanning probe lithography (SPL) platform able to image, inspect, align and pattern features down to single digit nano regime. The direct, mask-less patterning of molecular resists using active scanning probes represents a promising path circumventing the problems in today's radiation-based lithography. Here, we present examples of practical applications of the previously published electric field based, current-controlled scanning probe lithography on molecular glass resist calixarene by using the developed tabletop SPL system. We demonstrate the application of a step-and-repeat scanning probe lithography scheme including optical as well as AFM based alignment and navigation. In addition, sequential read-write cycle patterning combining positive and negative tone lithography is shown. We are presenting patterning over larger areas (80 x 80 μm) and feature the practical applicability of the lithographic processes.

Josephson junction

DOEpatents

Wendt, J.R.; Plut, T.A.; Martens, J.S.

1995-05-02

A novel method for fabricating nanometer geometry electronic devices is described. Such Josephson junctions can be accurately and reproducibly manufactured employing photolithographic and direct write electron beam lithography techniques in combination with aqueous etchants. In particular, a method is described for manufacturing planar Josephson junctions from high temperature superconducting material. 10 figs.

Design and fabrication of nano-imprint templates using unique pattern transforms and primitives

NASA Astrophysics Data System (ADS)

MacDonald, Susan; Mellenthin, David; Rentzsch, Kevin; Kramer, Kenneth; Ellenson, James; Hostetler, Tim; Enck, Ron

2005-11-01

Increasing numbers of MEMS, photonic, and integrated circuit manufacturers are investigating the use of Nano-imprint Lithography or Step and Flash Imprint Lithography (SFIL) as a lithography choice for making various devices and products. Their main interests in using these technologies are the lack of aberrations inherent in traditional optical reduction lithography, and the relative low cost of imprint tools. Since imprint templates are at 1X scale, the small sizes of these structures have necessitated the use of high-resolution 50KeV, and 100KeV e-beam lithography tools to build these templates. For MEMS and photonic applications, the structures desired are often circles, arches, and other non-orthogonal shapes. It has long been known that both 50keV, and especially 100keV e-beam lithography tools are extremely accurate, and can produce very high resolution structures, but the trade off is long write times. The main drivers in write time are shot count and stage travel. This work will show how circles and other non-orthogonal shapes can be produced with a 50KeV Variable Shaped Beam (VSB) e-beam lithography system using unique pattern transforms and primitive shapes, while keeping the shot count and write times under control. The quality of shapes replicated into the resist on wafer using an SFIL tool will also be presented.

Looking into the crystal ball: future device learning using hybrid e-beam and optical lithography (Keynote Paper)

NASA Astrophysics Data System (ADS)

Steen, S. E.; McNab, S. J.; Sekaric, L.; Babich, I.; Patel, J.; Bucchignano, J.; Rooks, M.; Fried, D. M.; Topol, A. W.; Brancaccio, J. R.; Yu, R.; Hergenrother, J. M.; Doyle, J. P.; Nunes, R.; Viswanathan, R. G.; Purushothaman, S.; Rothwell, M. B.

2005-05-01

Semiconductor process development teams are faced with increasing process and integration complexity while the time between lithographic capability and volume production has remained more or less constant over the last decade. Lithography tools have often gated the volume checkpoint of a new device node on the ITRS roadmap. The processes have to be redeveloped after the tooling capability for the new groundrule is obtained since straight scaling is no longer sufficient. In certain cases the time window that the process development teams have is actually decreasing. In the extreme, some forecasts are showing that by the time the 45nm technology node is scheduled for volume production, the tooling vendors will just begin shipping the tools required for this technology node. To address this time pressure, IBM has implemented a hybrid-lithography strategy that marries the advantages of optical lithography (high throughput) with electron beam direct write lithography (high resolution and alignment capability). This hybrid-lithography scheme allows for the timely development of semiconductor processes for the 32nm node, and beyond. In this paper we will describe how hybrid lithography has enabled early process integration and device learning and how IBM applied e-beam & optical hybrid lithography to create the world's smallest working SRAM cell.

Laser Scanning Holographic Lithography for Flexible 3D Fabrication of Multi-Scale Integrated Nano-structures and Optical Biosensors

PubMed Central

Yuan, Liang (Leon); Herman, Peter R.

2016-01-01

Three-dimensional (3D) periodic nanostructures underpin a promising research direction on the frontiers of nanoscience and technology to generate advanced materials for exploiting novel photonic crystal (PC) and nanofluidic functionalities. However, formation of uniform and defect-free 3D periodic structures over large areas that can further integrate into multifunctional devices has remained a major challenge. Here, we introduce a laser scanning holographic method for 3D exposure in thick photoresist that combines the unique advantages of large area 3D holographic interference lithography (HIL) with the flexible patterning of laser direct writing to form both micro- and nano-structures in a single exposure step. Phase mask interference patterns accumulated over multiple overlapping scans are shown to stitch seamlessly and form uniform 3D nanostructure with beam size scaled to small 200 μm diameter. In this way, laser scanning is presented as a facile means to embed 3D PC structure within microfluidic channels for integration into an optofluidic lab-on-chip, demonstrating a new laser HIL writing approach for creating multi-scale integrated microsystems. PMID:26922872

Pushing the plasmonic imaging nanolithography to nano-manufacturing

NASA Astrophysics Data System (ADS)

Gao, Ping; Li, Xiong; Zhao, Zeyu; Ma, Xiaoliang; Pu, Mingbo; Wang, Changtao; Luo, Xiangang

2017-12-01

Suffering from the so-called diffraction limit, the minimum resolution of conventional photolithography is limited to λ / 2 or λ / 4, where λ is the incident wavelength. The physical mechanism of this limit lies at the fact that the evanescent waves that carry subwavelength information of the object decay exponentially in a medium, and cannot reach the image plane. Surface plasmons (SPs) are non-radiative electromagnetic waves that propagate along the interface between metal and dielectric, which exhibits unique sub-diffraction optical characteristics. In recent years, benefiting from SPs' features, researchers have proposed a variety of plasmonic lithography methods in the manner of interference, imaging and direct writing, and have demonstrated that sub-diffraction resolution could be achieved by theoretical simulations or experiments. Among the various plasmonic lithography modes, plasmonic imaging lithography seems to be of particular importance for applications due to its compatibility with conventional lithography. Recent results show that the half pitch of nanograting can be shrinked down to 22 nm and even 16 nm. This paper will give an overview of research progress, representative achievements of plasmonic imaging lithography, the remained problems and outlook of further developments.

High performance Si immersion gratings patterned with electron beam lithography

NASA Astrophysics Data System (ADS)

Gully-Santiago, Michael A.; Jaffe, Daniel T.; Brooks, Cynthia B.; Wilson, Daniel W.; Muller, Richard E.

2014-07-01

Infrared spectrographs employing silicon immersion gratings can be significantly more compact than spectro- graphs using front-surface gratings. The Si gratings can also offer continuous wavelength coverage at high spectral resolution. The grooves in Si gratings are made with semiconductor lithography techniques, to date almost entirely using contact mask photolithography. Planned near-infrared astronomical spectrographs require either finer groove pitches or higher positional accuracy than standard UV contact mask photolithography can reach. A collaboration between the University of Texas at Austin Silicon Diffractive Optics Group and the Jet Propulsion Laboratory Microdevices Laboratory has experimented with direct writing silicon immersion grating grooves with electron beam lithography. The patterning process involves depositing positive e-beam resist on 1 to 30 mm thick, 100 mm diameter monolithic crystalline silicon substrates. We then use the facility JEOL 9300FS e-beam writer at JPL to produce the linear pattern that defines the gratings. There are three key challenges to produce high-performance e-beam written silicon immersion gratings. (1) E- beam field and subfield stitching boundaries cause periodic cross-hatch structures along the grating grooves. The structures manifest themselves as spectral and spatial dimension ghosts in the diffraction limited point spread function (PSF) of the diffraction grating. In this paper, we show that the effects of e-beam field boundaries must be mitigated. We have significantly reduced ghost power with only minor increases in write time by using four or more field sizes of less than 500 μm. (2) The finite e-beam stage drift and run-out error cause large-scale structure in the wavefront error. We deal with this problem by applying a mark detection loop to check for and correct out minuscule stage drifts. We measure the level and direction of stage drift and show that mark detection reduces peak-to-valley wavefront error by a factor of 5. (3) The serial write process for typical gratings yields write times of about 24 hours- this makes prototyping costly. We discuss work with negative e-beam resist to reduce the fill factor of exposure, and therefore limit the exposure time. We also discuss the tradeoffs of long write-time serial write processes like e-beam with UV photomask lithography. We show the results of experiments on small pattern size prototypes on silicon wafers. Current prototypes now exceed 30 dB of suppression on spectral and spatial dimension ghosts compared to monochromatic spectral purity measurements of the backside of Si echelle gratings in reflection at 632 nm. We perform interferometry at 632 nm in reflection with a 25 mm circular beam on a grating with a blaze angle of 71.6°. The measured wavefront error is 0.09 waves peak to valley.

The range and intensity of backscattered electrons for use in the creation of high fidelity electron beam lithography patterns.

PubMed

Czaplewski, David A; Holt, Martin V; Ocola, Leonidas E

2013-08-02

We present a set of universal curves that predict the range and intensity of backscattered electrons which can be used in conjunction with electron beam lithography to create high fidelity nanoscale patterns. The experimental method combines direct write dose, backscattered dose, and a self-reinforcing pattern geometry to measure the dose provided by backscattered electrons to a nanoscale volume on the substrate surface at various distances from the electron source. Electron beam lithography is used to precisely control the number and position of incident electrons on the surface of the material. Atomic force microscopy is used to measure the height of the negative electron beam lithography resist. Our data shows that the range and the intensity of backscattered electrons can be predicted using the density and the atomic number of any solid material, respectively. The data agrees with two independent Monte Carlo simulations without any fitting parameters. These measurements are the most accurate electron range measurements to date.

Direct writing of metal nanostructures: lithographic tools for nanoplasmonics research.

PubMed

Leggett, Graham J

2011-03-22

Continued progress in the fast-growing field of nanoplasmonics will require the development of new methods for the fabrication of metal nanostructures. Optical lithography provides a continually expanding tool box. Two-photon processes, as demonstrated by Shukla et al. (doi: 10.1021/nn103015g), enable the fabrication of gold nanostructures encapsulated in dielectric material in a simple, direct process and offer the prospect of three-dimensional fabrication. At higher resolution, scanning probe techniques enable nanoparticle particle placement by localized oxidation, and near-field sintering of nanoparticulate films enables direct writing of nanowires. Direct laser "printing" of single gold nanoparticles offers a remarkable capability for the controlled fabrication of model structures for fundamental studies, particle-by-particle. Optical methods continue to provide a powerful support for research into metamaterials.

Molecular Switch for Sub-Diffraction Laser Lithography by Photoenol Intermediate-State Cis-Trans Isomerization.

PubMed

Mueller, Patrick; Zieger, Markus M; Richter, Benjamin; Quick, Alexander S; Fischer, Joachim; Mueller, Jonathan B; Zhou, Lu; Nienhaus, Gerd Ulrich; Bastmeyer, Martin; Barner-Kowollik, Christopher; Wegener, Martin

2017-06-27

Recent developments in stimulated-emission depletion (STED) microscopy have led to a step change in the achievable resolution and allowed breaking the diffraction limit by large factors. The core principle is based on a reversible molecular switch, allowing for light-triggered activation and deactivation in combination with a laser focus that incorporates a point or line of zero intensity. In the past years, the concept has been transferred from microscopy to maskless laser lithography, namely direct laser writing (DLW), in order to overcome the diffraction limit for optical lithography. Herein, we propose and experimentally introduce a system that realizes such a molecular switch for lithography. Specifically, the population of intermediate-state photoenol isomers of α-methyl benzaldehydes generated by two-photon absorption at 700 nm fundamental wavelength can be reversibly depleted by simultaneous irradiation at 440 nm, suppressing the subsequent Diels-Alder cycloaddition reaction which constitutes the chemical core of the writing process. We demonstrate the potential of the proposed mechanism for STED-inspired DLW by covalently functionalizing the surface of glass substrates via the photoenol-driven STED-inspired process exploiting reversible photoenol activation with a polymerization initiator. Subsequently, macromolecules are grown from the functionalized areas and the spatially coded glass slides are characterized by atomic-force microscopy. Our approach allows lines with a full-width-at-half-maximum of down to 60 nm and line gratings with a lateral resolution of 100 nm to be written, both surpassing the diffraction limit.

Direct-write graded index materials realized in protein hydrogels

DOE PAGES

Kaehr, Bryan; Scrymgeour, David A.

2016-09-20

Here, the ability to create optical materials with arbitrary index distributions would prove transformative for optics design and applications. However, current fabrication techniques for graded index (GRIN) materials rely on diffusion profiles and therefore are unable to realize arbitrary distribution GRIN design. Here, we demonstrate the laser direct writing of graded index structures in protein-based hydrogels using multiphoton lithography. We show index changes spanning a range of 10 –2, which is comparable with laser densified glass and polymer systems. Further, we demonstrate the conversion of these written density variation structures into SiO 2, opening up the possibility of transforming GRINmore » hydrogels to a wide range of material systems.« less

Direct-write graded index materials realized in protein hydrogels

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kaehr, Bryan; Scrymgeour, David A.

Here, the ability to create optical materials with arbitrary index distributions would prove transformative for optics design and applications. However, current fabrication techniques for graded index (GRIN) materials rely on diffusion profiles and therefore are unable to realize arbitrary distribution GRIN design. Here, we demonstrate the laser direct writing of graded index structures in protein-based hydrogels using multiphoton lithography. We show index changes spanning a range of 10 –2, which is comparable with laser densified glass and polymer systems. Further, we demonstrate the conversion of these written density variation structures into SiO 2, opening up the possibility of transforming GRINmore » hydrogels to a wide range of material systems.« less

Laser direct writing and inkjet printing for a sub-2 μm channel length MoS2 transistor with high-resolution electrodes

NASA Astrophysics Data System (ADS)

Kwon, Hyuk-Jun; Chung, Seungjun; Jang, Jaewon; Grigoropoulos, Costas P.

2016-10-01

Patterns formed by the laser direct writing (LDW) lithography process are used either as channels or barriers for MoS2 transistors fabricated via inkjet printing. Silver (Ag) nanoparticle ink is printed over patterns formed on top of the MoS2 flakes in order to construct high-resolution source/drain (S/D) electrodes. When positive photoresist is used, the produced grooves are filled with inkjetted Ag ink by capillary forces. On the other hand, in the case of negative photoresist, convex barrier-like patterns are written on the MoS2 flakes and patterns, dividing the printed Ag ink into the S/D electrodes by self-alignment. LDW lithography combined with inkjet printing is applied to MoS2 thin-film transistors that exhibit moderate electrical performance such as mobility and subthreshold swing. However, especially in the linear operation regime, their features are limited by the contact effect. The Y-function method can exclude the contact effect and allow proper evaluation of the maximum available mobility and contact resistance. The presented fabrication methods may facilitate the development of cost-effective fabrication processes.

Local electric field direct writing – Electron-beam lithography and mechanism

DOE PAGES

Jiang, Nan; Su, Dong; Spence, John C. H.

2017-08-24

Local electric field induced by a focused electron probe in silicate glass thin films is evaluated in this paper by the migration of cations. Extremely strong local electric fields can be obtained by the focused electron probe from a scanning transmission electron microscope. As a result, collective atomic displacements occur. This newly revised mechanism provides an efficient tool to write patterned nanostructures directly, and thus overcome the low efficiency of the conventional electron-beam lithography. Applying this technique to silicate glass thin films, as an example, a grid of rods of nanometer dimension can be efficiently produced by rapidly scanning amore » focused electron probe. This nanopatterning is achieved through swift phase separation in the sample, without any post-development processes. The controlled phase separation is induced by massive displacements of cations (glass modifiers) within the glass-former network, driven by the strong local electric fields. The electric field is induced by accumulated charge within the electron probed region, which is generated by the excitation of atomic electrons by the incident electron. Throughput is much improved compared to other scanning probe techniques. Finally, the half-pitch spatial resolution of nanostructure in this particular specimen is 2.5 nm.« less

Local electric field direct writing – Electron-beam lithography and mechanism

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jiang, Nan; Su, Dong; Spence, John C. H.

Local electric field induced by a focused electron probe in silicate glass thin films is evaluated in this paper by the migration of cations. Extremely strong local electric fields can be obtained by the focused electron probe from a scanning transmission electron microscope. As a result, collective atomic displacements occur. This newly revised mechanism provides an efficient tool to write patterned nanostructures directly, and thus overcome the low efficiency of the conventional electron-beam lithography. Applying this technique to silicate glass thin films, as an example, a grid of rods of nanometer dimension can be efficiently produced by rapidly scanning amore » focused electron probe. This nanopatterning is achieved through swift phase separation in the sample, without any post-development processes. The controlled phase separation is induced by massive displacements of cations (glass modifiers) within the glass-former network, driven by the strong local electric fields. The electric field is induced by accumulated charge within the electron probed region, which is generated by the excitation of atomic electrons by the incident electron. Throughput is much improved compared to other scanning probe techniques. Finally, the half-pitch spatial resolution of nanostructure in this particular specimen is 2.5 nm.« less

Multi-shaped beam: development status and update on lithography results

NASA Astrophysics Data System (ADS)

Slodowski, Matthias; Doering, Hans-Joachim; Dorl, Wolfgang; Stolberg, Ines A.

2011-04-01

According to the ITRS [1] photo mask is a significant challenge for the 22nm technology node requirements and beyond. Mask making capability and cost escalation continue to be critical for future lithography progress. On the technological side mask specifications and complexity have increased more quickly than the half-pitch requirements on the wafer designated by the roadmap due to advanced optical proximity correction and double patterning demands. From the economical perspective mask costs have significantly increased each generation, in which mask writing represents a major portion. The availability of a multi-electron-beam lithography system for mask write application is considered a potential solution to overcome these challenges [2, 3]. In this paper an update of the development status of a full-package high-throughput multi electron-beam writer, called Multi Shaped Beam (MSB), will be presented. Lithography performance results, which are most relevant for mask writing applications, will be disclosed. The MSB technology is an evolutionary development of the matured single Variable Shaped Beam (VSB) technology. An arrangement of Multi Deflection Arrays (MDA) allows operation with multiple shaped beams of variable size, which can be deflected and controlled individually [4]. This evolutionary MSB approach is associated with a lower level of risk and a relatively short time to implementation compared to the known revolutionary concepts [3, 5, 6]. Lithography performance is demonstrated through exposed pattern. Further details of the substrate positioning platform performance will be disclosed. It will become apparent that the MSB operational mode enables lithography on the same and higher performance level compared to single VSB and that there are no specific additional lithography challenges existing beside those which have already been addressed [1].

Integration of e-beam direct write in BEOL processes of 28nm SRAM technology node using mix and match

NASA Astrophysics Data System (ADS)

Gutsch, Manuela; Choi, Kang-Hoon; Hanisch, Norbert; Hohle, Christoph; Seidel, Robert; Steidel, Katja; Thrun, Xaver; Werner, Thomas

2014-10-01

Many efforts were spent in the development of EUV technologies, but from a customer point of view EUV is still behind expectations. In parallel since years maskless lithography is included in the ITRS roadmap wherein multi electron beam direct patterning is considered as an alternative or complementary approach for patterning of advanced technology nodes. The process of multi beam exposures can be emulated by single beam technologies available in the field. While variable shape-beam direct writers are already used for niche applications, the integration capability of e-beam direct write at advanced nodes has not been proven, yet. In this study the e-beam lithography was implemented in the BEoL processes of the 28nm SRAM technology. Integrated 300mm wafers with a 28nm back-end of line (BEoL) stack from GLOBALFOUNDRIES, Dresden, were used for the experiments. For the patterning of the Metal layer a Mix and Match concept based on the sequence litho - etch - litho - etch (LELE) was developed and evaluated wherein several exposure fields were blanked out during the optical exposure. E-beam patterning results of BEoL Metal and Via layers are presented using a 50kV VISTEC SB3050DW variable shaped electron beam direct writer at Fraunhofer IPMS-CNT. Etch results are shown and compared to the POR. In summary we demonstrate the integration capability of EBDW into a productive CMOS process flow at the example of the 28nm SRAM technology node.

Lossless compression techniques for maskless lithography data

NASA Astrophysics Data System (ADS)

Dai, Vito; Zakhor, Avideh

2002-07-01

Future lithography systems must produce more dense chips with smaller feature sizes, while maintaining the throughput of one wafer per sixty seconds per layer achieved by today's optical lithography systems. To achieve this throughput with a direct-write maskless lithography system, using 25 nm pixels for 50 nm feature sizes, requires data rates of about 10 Tb/s. In a previous paper, we presented an architecture which achieves this data rate contingent on consistent 25 to 1 compression of lithography data, and on implementation of a decoder-writer chip with a real-time decompressor fabricated on the same chip as the massively parallel array of lithography writers. In this paper, we examine the compression efficiency of a spectrum of techniques suitable for lithography data, including two industry standards JBIG and JPEG-LS, a wavelet based technique SPIHT, general file compression techniques ZIP and BZIP2, our own 2D-LZ technique, and a simple list-of-rectangles representation RECT. Layouts rasterized both to black-and-white pixels, and to 32 level gray pixels are considered. Based on compression efficiency, JBIG, ZIP, 2D-LZ, and BZIP2 are found to be strong candidates for application to maskless lithography data, in many cases far exceeding the required compression ratio of 25. To demonstrate the feasibility of implementing the decoder-writer chip, we consider the design of a hardware decoder based on ZIP, the simplest of the four candidate techniques. The basic algorithm behind ZIP compression is Lempel-Ziv 1977 (LZ77), and the design parameters of LZ77 decompression are optimized to minimize circuit usage while maintaining compression efficiency.

Review on recent Developments on Fabrication Techniques of Distributed Feedback (DFB) Based Organic Lasers

NASA Astrophysics Data System (ADS)

Azrina Talik, Noor; Boon Kar, Yap; Noradhlia Mohamad Tukijan, Siti; Wong, Chuan Ling

2017-10-01

To date, the state of art organic semiconductor distributed feedback (DFB) lasers gains tremendous interest in the organic device industry. This paper presents a short reviews on the fabrication techniques of DFB based laser by focusing on the fabrication method of DFB corrugated structure and the deposition of organic gain on the nano-patterned DFB resonator. The fabrication techniques such as Laser Direct Writing (LDW), ultrafast photo excitation dynamics, Laser Interference Lithography (LIL) and Nanoimprint Lithography (NIL) for DFB patterning are presented. In addition to that, the method for gain medium deposition method is also discussed. The technical procedures of the stated fabrication techniques are summarized together with their benefits and comparisons to the traditional fabrication techniques.

Quantum point contacts for electrons on H-Si(111) surfaces using a Ga focused-ion beam for direct-write implant lithography

NASA Astrophysics Data System (ADS)

Robertson, Luke D.; Kane, B. E.

Quantum point contacts (QPCs) realized in materials with anisotropic electron mass, such as Si, may exhibit valley filter phenomena leading to extreme sensitivity to single donor occupancy, and thus are of interest to measurement schemes for donor-based quantum information processing. To this end, we have developed ambipolar devices on a H-Si(111):Si(100)/SiO2 flip-chip assembly which utilize in-plane, degenerately doped n+ (P) and p+ (B) contacts to probe transport in a 2D electron system (2DES). In addition to providing electrostatic isolation of carriers, these p-type contacts can be used as lateral depletion gates to modulate the 2DES conductance, and if extended to the nanoscale can lead to 1D confinement and quantized conductance of the 2DES. In this talk, I will describe our efforts to use a Ga focused-ion beam for direct-write implant lithography to pattern QPCs and Ga nanowires on H-Si(111) surfaces. I will present low temperature (4.2K) conductance data collected on 30nm Ga nanowires to demonstrate their effectiveness as lateral depletion gates, and discuss on going measurements to confine and modulate the conductance of the 2DES using Ga QPCs.

A “dry and wet hybrid” lithography technique for multilevel replication templates: Applications to microfluidic neuron culture and two-phase global mixing

PubMed Central

Paul, Debjani; Saias, Laure; Pedinotti, Jean-Cedric; Chabert, Max; Magnifico, Sebastien; Pallandre, Antoine; De Lambert, Bertrand; Houdayer, Claude; Brugg, Bernard; Peyrin, Jean-Michel; Viovy, Jean-Louis

2011-01-01

A broad range of microfluidic applications, ranging from cell culture to protein crystallization, requires multilevel devices with different heights and feature sizes (from micrometers to millimeters). While state-of-the-art direct-writing techniques have been developed for creating complex three-dimensional shapes, replication molding from a multilevel template is still the preferred method for fast prototyping of microfluidic devices in the laboratory. Here, we report on a “dry and wet hybrid” technique to fabricate multilevel replication molds by combining SU-8 lithography with a dry film resist (Ordyl). We show that the two lithography protocols are chemically compatible with each other. Finally, we demonstrate the hybrid technique in two different microfluidic applications: (1) a neuron culture device with compartmentalization of different elements of a neuron and (2) a two-phase (gas-liquid) global micromixer for fast mixing of a small amount of a viscous liquid into a larger volume of a less viscous liquid. PMID:21559239

A mask manufacturer's perspective on maskless lithography

NASA Astrophysics Data System (ADS)

Buck, Peter; Biechler, Charles; Kalk, Franklin

2005-11-01

Maskless Lithography (ML2) is again being considered for use in mainstream CMOS IC manufacturing. Sessions at technical conferences are being devoted to ML2. A multitude of new companies have been formed in the last several years to apply new concepts to breaking the throughput barrier that has in the past prevented ML2 from achieving the cost and cycle time performance necessary to become economically viable, except in rare cases. Has Maskless Lithography's (we used to call it "Direct Write Lithography") time really come? If so, what is the expected impact on the mask manufacturer and does it matter? The lithography tools used today in mask manufacturing are similar in concept to ML2 except for scale, both in throughput and feature size. These mask tools produce highly accurate lithographic images directly from electronic pattern files, perform multi-layer overlay, and mix-n-match across multiple tools, tool types and sites. Mask manufacturers are already accustomed to the ultimate low volume - one substrate per design layer. In order to achieve the economically required throughput, proposed ML2 systems eliminate or greatly reduce some of the functions that are the source of the mask writer's accuracy. Can these ML2 systems meet the demanding lithographic requirements without these functions? ML2 may eliminate the reticle but many of the processes and procedures performed today by the mask manufacturer are still required. Examples include the increasingly complex mask data preparation step and the verification performed to ensure that the pattern on the reticle is accurately representing the design intent. The error sources that are fixed on a reticle are variable with time on an ML2 system. It has been proposed that if ML2 is successful it will become uneconomical to be in the mask business - that ML2, by taking the high profit masks will take all profitability out of mask manufacturing and thereby endanger the entire semiconductor industry. Others suggest that a successful ML2 system solves the mask cost issue and thereby reduces the need and attractiveness of ML2. Are these concerns valid? In this paper we will present a perspective on maskless lithography from the considerable "direct write" experience of a mask manufacturer. We will examine the various business models proposed for ML2 insertion as well as the key technical challenges to achieving simultaneously the throughput and the lithographic quality necessary to become economically viable. We will consider the question of the economic viability of the mask industry in a post-ML2 world and will propose possible models where the mask industry can meaningfully participate.

Intregrating metallic wiring with three-dimensional polystyrene colloidal crystals using electron-beam lithography and three-dimensional laser lithography

NASA Astrophysics Data System (ADS)

Tian, Yaolan; Isotalo, Tero J.; Konttinen, Mikko P.; Li, Jiawei; Heiskanen, Samuli; Geng, Zhuoran; Maasilta, Ilari J.

2017-02-01

We demonstrate a method to fabricate narrow, down to a few micron wide metallic leads on top of a three-dimensional (3D) colloidal crystal self-assembled from polystyrene (PS) nanospheres of diameter 260 nm, using electron-beam lithography. This fabrication is not straightforward due to the fact that PS nanospheres cannot usually survive the harsh chemical treatments required in the development and lift-off steps of electron-beam lithography. We solve this problem by increasing the chemical resistance of the PS nanospheres using an additional electron-beam irradiation step, which allows the spheres to retain their shape and their self-assembled structure, even after baking to a temperature of 160 °C, the exposure to the resist developer and the exposure to acetone, all of which are required for the electron-beam lithography step. Moreover, we show that by depositing an aluminum oxide capping layer on top of the colloidal crystal after the e-beam irradiation, the surface is smooth enough so that continuous metal wiring can be deposited by the electron-beam lithography. Finally, we also demonstrate a way to self-assemble PS colloidal crystals into a microscale container, which was fabricated using direct-write 3D laser-lithography. Metallic wiring was also successfully integrated with the combination of a container structure and a PS colloidal crystal. Our goal is to make a device for studies of thermal transport in 3D phononic crystals, but other phononic or photonic crystal applications could also be envisioned.

Direct laser written polymer waveguides with out of plane couplers for optical chips

NASA Astrophysics Data System (ADS)

Landowski, Alexander; Zepp, Dominik; Wingerter, Sebastian; von Freymann, Georg; Widera, Artur

2017-10-01

Optical technologies call for waveguide networks featuring high integration densities, low losses, and simple operation. Here, we present polymer waveguides fabricated from a negative tone photoresist via two-photon-lithography in direct laser writing, and show a detailed parameter study of their performance. Specifically, we produce waveguides featuring bend radii down to 40 μ m, insertion losses of the order of 10 dB, and loss coefficients smaller than 0.81 dB mm-1, facilitating high integration densities in writing fields of 300 μ m×300 μ m. A novel three-dimensional coupler design allows for coupling control as well as direct observation of outputs in a single field of view through a microscope objective. Finally, we present beam-splitting devices to construct larger optical networks, and we show that the waveguide material is compatible with the integration of quantum emitters.

United States Air Force High School Apprenticeship Program. 1990 Program Management Report. Volume 3

DTIC Science & Technology

1991-04-18

User Guide Shelly Knupp 73 Computer-Aided Design (CAD) Area Christopher O’Dell 74 Electron Beam Lithography Suzette Yu 68 Flight Dynamics Laboratory 75...fabrication. I Mr. Ed Davis, for the background knowledge of device processes and I information on electron beam lithography . Captain Mike Cheney, for...researcher may write gates on to the wafer by a process called lithography . This is the most crucial and complex part of the process. Two types of proven

Epifluorescent direct-write photolithography for microfluidic applications

NASA Astrophysics Data System (ADS)

Higgins, MacCallister; Geiger, Emil J.

2015-01-01

We present a technique for fabricating soft-lithography molds created using an epifluorescent microscope. By focusing the UV light emitted from a Hg arc lamp, we demonstrate the ability to direct-write photoresist features with a minimum resolution of 45 μm. This resolution is satisfactory for many microfluidic applications. A major advantage of this technique is its low cost, both in terms of capital investment and on-going expenditures. Furthermore, by using a motorized stage, we can quickly fabricate a design on demand, eliminating the need, cost, and lead-time required for a photomask. With the addition of an electronic shutter, complicated separate structures can be imaged and utilized to make a wide range of microfluidic devices. We demonstrate this technique using dry-film resist due to its low cost, ease of application, and less stringent safety protocols.

Direct writing of gold nanostructures with an electron beam: On the way to pure nanostructures by combining optimized deposition with oxygen-plasma treatment

PubMed Central

Belić, Domagoj; Shawrav, Mostafa M; Bertagnolli, Emmerich

2017-01-01

This work presents a highly effective approach for the chemical purification of directly written 2D and 3D gold nanostructures suitable for plasmonics, biomolecule immobilisation, and nanoelectronics. Gold nano- and microstructures can be fabricated by one-step direct-write lithography process using focused electron beam induced deposition (FEBID). Typically, as-deposited gold nanostructures suffer from a low Au content and unacceptably high carbon contamination. We show that the undesirable carbon contamination can be diminished using a two-step process – a combination of optimized deposition followed by appropriate postdeposition cleaning. Starting from the common metal-organic precursor Me2-Au-tfac, it is demonstrated that the Au content in pristine FEBID nanostructures can be increased from 30 atom % to as much as 72 atom %, depending on the sustained electron beam dose. As a second step, oxygen-plasma treatment is established to further enhance the Au content in the structures, while preserving their morphology to a high degree. This two-step process represents a simple, feasible and high-throughput method for direct writing of purer gold nanostructures that can enable their future use for demanding applications. PMID:29259868

Marching of the microlithography horses: electron, ion, and photon: past, present, and future

NASA Astrophysics Data System (ADS)

Lin, Burn J.

2007-03-01

Microlithography patterning employs one of three media; electron, ion, and photon. They are in a way like horses, racing towards the mainstream. Some horses such as electrons run fast but repel each other. Ion beams behave like electron beams but are less developed. The photon beam is the undisputed workhorse, taking microlithography from the 5-μm minimum feature size to 32-nm half pitch. This paper examines the history of microlithography in pattern generation, proximity printing, and projection printing, then identifies the strong and weak points of each technology. In addition to ion-beam and e-beam lithography, the coverage of optical lithography spans the wavelength from 436 to 13.5 nm. Our learning from history helps us prevent mistakes in the future. In almost all cases, making or using the mask presents one of the limiting problems, no matter the type of beams or the replication method. Only the maskless method relieves us from mask-related problems. A way to overcome the low throughput handicap of maskless systems is to use multiple e-beam direct writing, whose imaging lens can be economically and compactly fabricated using MEMS techniques. In a way, the history of microlithography parallels that of aviation. Proximity printing is like the Wright-Brothers' plane; 1X projection printing, single-engine propeller plane with unitized body; reduction step-and-repeat projection printing, multi-engine commercial airliner; scanners, jet airliners. Optical lithography has improved in many ways than just increasing NA and reducing wavelength just as the commercial airliners improving in many other areas than just the speed. The SST increased the speed of airliners by more than a factor of two just as optical resolution doubled with double exposures. EUV lithography with the wavelength reduced by an order of magnitude is similar to the space shuttle increasing its speed to more than 10 times that of the SST. Multiple-beam direct write systems are like helicopters. They do not need airports(masks) but we need a lot of beams to carry the same payload.

Advanced electric-field scanning probe lithography on molecular resist using active cantilever

NASA Astrophysics Data System (ADS)

Kaestner, Marcus; Aydogan, Cemal; Ivanov, Tzvetan; Ahmad, Ahmad; Angelov, Tihomir; Reum, Alexander; Ishchuk, Valentyn; Krivoshapkina, Yana; Hofer, Manuel; Lenk, Steve; Atanasov, Ivaylo; Holz, Mathias; Rangelow, Ivo W.

2015-07-01

The routine "on demand" fabrication of features smaller than 10 nm opens up new possibilities for the realization of many devices. Driven by the thermally actuated piezoresistive cantilever technology, we have developed a prototype of a scanning probe lithography (SPL) platform which is able to image, inspect, align, and pattern features down to the single digit nanoregime. Here, we present examples of practical applications of the previously published electric-field based current-controlled scanning probe lithography. In particular, individual patterning tests are carried out on calixarene by using our developed table-top SPL system. We have demonstrated the application of a step-and-repeat SPL method including optical as well as atomic force microscopy-based navigation and alignment. The closed-loop lithography scheme was applied to sequentially write positive and negative tone features. Due to the integrated unique combination of read-write cycling, each single feature is aligned separately with the highest precision and inspected after patterning. This routine was applied to create a pattern step by step. Finally, we have demonstrated the patterning over larger areas, over existing topography, and the practical applicability of the SPL processes for lithography down to 13-nm pitch patterns. To enhance the throughput capability variable beam diameter electric field, current-controlled SPL is briefly discussed.

Mix & match electron beam & scanning probe lithography for high throughput sub-10 nm lithography

NASA Astrophysics Data System (ADS)

Kaestner, Marcus; Hofer, Manuel; Rangelow, Ivo W.

2013-03-01

The prosperous demonstration of a technique able to produce features with single nanometer (SN) resolution could guide the semiconductor industry into the desired beyond CMOS era. In the lithographic community immense efforts are being made to develop extreme ultra-violet lithography (EUVL) and multiple-e-beam direct-write systems as possible successor for next generation lithography (NGL). However, patterning below 20 nm resolution and sub-10 nm overlay alignment accuracy becomes an extremely challenging quest. Herein, the combination of electron beam lithography (EBL) or EUVL with the outstanding capabilities of closed-loop scanning proximal probe nanolithography (SPL) reveals a promising way to improve both patterning resolution and reproducibility in combination with excellent overlay and placement accuracy. In particular, the imaging and lithographic resolution capabilities provided by scanning probe microscopy (SPM) methods touches the atomic level, which expresses the theoretical limit of constructing nanoelectronic devices. Furthermore, the symbiosis between EBL (EUVL) and SPL expands the process window of EBL (EUVL) far beyond state-of-the-art allowing SPL-based pre- and post-patterning of EBL (EUVL) written features at critical dimension level with theoretically nanometer precise pattern overlay alignment. Moreover, we can modify the EBL (EUVL) pattern before as well as after the development step. In this paper we demonstrate proof of concept using the ultra-high resolution molecular glass resist calixarene. Therefor we applied Gaussian E-beam lithography system operating at 10 keV and a home-developed SPL set-up. The introduced Mix and Match lithography strategy enables a powerful use of our SPL set-up especially as post-patterning tool for inspection and repair functions below the sub-10 nm critical dimension level.

Automated scanning probe lithography with n-alkanethiol self assembled monolayers on Au(111): Application for teaching undergraduate laboratories

PubMed Central

Brown, Treva T.; LeJeune, Zorabel M.; Liu, Kai; Hardin, Sean; Li, Jie-Ren; Rupnik, Kresimir; Garno, Jayne C.

2010-01-01

Controllers for scanning probe instruments can be programmed for automated lithography to generate desired surface arrangements of nanopatterns of organic thin films, such as n-alkanethiol self-assembled monolayers (SAMs). In this report, atomic force microscopy (AFM) methods of lithography known as nanoshaving and nanografting are used to write nanopatterns within organic thin films. Commercial instruments provide software to control the length, direction, speed, and applied force of the scanning motion of the tip. For nanoshaving, higher forces are applied to an AFM tip to selectively remove regions of the matrix monolayer, exposing bare areas of the gold substrate. Nanografting is accomplished by force-induced displacement of molecules of a matrix SAM, followed immediately by the surface self-assembly of n-alkanethiol molecules from solution. Advancements in AFM automation enable rapid protocols for nanolithography, which can be accomplished within the tight time restraints of undergraduate laboratories. Example experiments with scanning probe lithography (SPL) will be described in this report that were accomplished by undergraduate students during laboratory course activities and research internships in the chemistry department of Louisiana State University. Students were introduced to principles of surface analysis and gained “hands-on” experience with nanoscale chemistry. PMID:21483651

Fabrication and Characterization of Three Dimensional Photonic Crystals Generated by Multibeam Interference Lithography

DTIC Science & Technology

2009-01-01

and J. A. Lewis, "Microperiodic structures - Direct writing of three-dimensional webs ," Nature, vol. 428, pp. 386-386, 2004. [9] M. Campbell, D. N...of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers , vol. 44, pp. 6355-6367, 2005. [75] P. Cloetens, W. Ludwig, J... paper screen on the sample holder and marking the beam position. If the central beam is properly aligned, the spot on the screen remains at the

Geometrical E-beam proximity correction for raster scan systems

NASA Astrophysics Data System (ADS)

Belic, Nikola; Eisenmann, Hans; Hartmann, Hans; Waas, Thomas

1999-04-01

High pattern fidelity is a basic requirement for the generation of masks containing sub micro structures and for direct writing. Increasing needs mainly emerging from OPC at mask level and x-ray lithography require a correction of the e-beam proximity effect. The most part of e-beam writers are raster scan system. This paper describes a new method for geometrical pattern correction in order to provide a correction solution for e-beam system that are not able to apply variable doses.

Sub-100-nm trackwidth development by e-beam lithography for advanced magnetic recording heads

NASA Astrophysics Data System (ADS)

Chang, Jei-Wei; Chen, Chao-Peng

2006-03-01

Although semiconductor industry ramps the products with 90 nm much quicker than anticipated [1], magnetic recording head manufacturers still have difficulties in producing sub-100 nm read/write trackwidth. Patterning for high-aspectratio writer requires much higher depth of focus (DOF) than most advanced optical lithography, including immersion technique developed recently [2]. Self-aligning reader with its stabilized bias requires a bi-layer lift-off structure where the underlayer is narrower than the top image layer. As the reader's trackwidth is below 100nm, the underlayer becomes very difficult to control. Among available approaches, e-beam lithography remains the most promising one to overcome the challenge of progressive miniaturization. In this communication, the authors discussed several approaches using ebeam lithography to achieve sub-100 nm read/write trackwidth. Our studies indicated the suspended resist bridge design can not only widen the process window for lift-off process but also makes 65 nm trackwidth feasible to manufacture. Necked dog-bone structure seems to be the best design in this application due to less proximity effects from adjacent structures and minimum blockages for ion beam etching. The trackwidth smaller than 65 nm can be fabricated via the combination of e-beam lithography with auxiliary slimming and/or trimming. However, deposit overspray through undercut becomes dominated in such a small dimension. To minimize the overspray, the effects of underlayer thickness need to be further studied.

Flexible fabrication of multi-scale integrated 3D periodic nanostructures with phase mask

NASA Astrophysics Data System (ADS)

Yuan, Liang Leon

Top-down fabrication of artificial nanostructures, especially three-dimensional (3D) periodic nanostructures, that forms uniform and defect-free structures over large area with the advantages of high throughput and rapid processing and in a manner that can further monolithically integrate into multi-scale and multi-functional devices is long-desired but remains a considerable challenge. This thesis study advances diffractive optical element (DOE) based 3D laser holographic nanofabrication of 3D periodic nanostructures and develops new kinds of DOEs for advanced diffracted-beam control during the fabrication. Phase masks, as one particular kind of DOE, are a promising direction for simple and rapid fabrication of 3D periodic nanostructures by means of Fresnel diffraction interference lithography. When incident with a coherent beam of light, a suitable phase mask (e.g. with 2D nano-grating) can create multiple diffraction orders that are inherently phase-locked and overlap to form a 3D light interference pattern in the proximity of the DOE. This light pattern is typically recorded in photosensitive materials including photoresist to develop into 3D photonic crystal nanostructure templates. Two kinds of advanced phase masks were developed that enable delicate phase control of multiple diffraction beams. The first exploits femtosecond laser direct writing inside fused silica to assemble multiple (up to nine) orthogonally crossed (2D) grating layers, spaced on Talbot planes to overcome the inherent weak diffraction efficiency otherwise found in low-contrast volume gratings. A systematic offsetting of orthogonal grating layers to establish phase offsets over 0 to pi/2 range provided precise means for controlling the 3D photonic crystal structure symmetry between body centered tetragonal (BCT) and woodpile-like tetragonal (wTTR). The second phase mask consisted of two-layered nanogratings with small sub-wavelength grating periods and phase offset control. That was designed with isotropic properties attractive for generating a complete photonic band gap (PBG). An isolation layer was used between adjacent polymer layers to offer a reversal coating for sample preparation of scanning electron microscopy (SEM) imaging and top surface planarization. Electron beam lithography has been employed to fabricate a multi-level nano-grating phase mask that produces a diamond-like 3D nanostructure via phase mask lithography, promising for creating photonic crystal (PC) templates that can be inverted with high-index materials and form a complete PBG at telecommunication wavelengths. A laser scanning holographic method for 3D exposure in thick photoresist is introduced that combines the unique advantages of large area 3D holographic interference lithography (HIL) with the flexible patterning of laser direct writing to form both micro- and nano-structures in a single exposure step. Phase mask interference patterns accumulated over multiple overlapping scans are shown to stitch seamlessly and form highly uniform 3D nanostructure with beam size scaled to small 200 microm diameter. Further direct-write holography demonstrates monolithical writing of multi-scale lab-on-a-chip with multiple functionalities including on-chip integrated fluorescence. Various 3D periodic nanostructures are demonstrated over a 15 mmx15 mm area, through full 40 microm photoresist thickness and with uniform structural and optical properties revealed by focused ion beam (FIB) milling, SEM imaging and stopband measures. The lateral and axial periods scale from respective 1500 nm to 570 nm and 9.2 microm to 1.2 microm to offer a Gamma-Z stopband at 1.5 microm. Overall, laser scanning is presented as a facile means to embed 3D PC nanostructure within microfluidic channels for integration into an optofluidic lab-on-chip, demonstrating a new laser HIL writing approach for creating multi-scale integrated microsystems.

Benchmarking surface selective vacuum ultraviolet and thermal postprocessing of thermoplastics for ultrasmooth 3-D-printed micro-optics

NASA Astrophysics Data System (ADS)

Kirchner, Robert; Chidambaram, Nachiappan; Schift, Helmut

2018-04-01

State-of-the-art, polymeric, refractive micro-optics simultaneously require an ultrasmooth three-dimensional (3-D) surface and a precise geometry for excellent optical performance with minimal stray light. In earlier work, we have established a surface finishing process for thermoplastic polymer master structures that is only effective on the surface and does not affect the designed optical geometry, thus enabling polishing without touching. Therewith, the high curvature corners of a 50-μm-tall optical diffuser device were maintained while the surface roughness was reduced to about 10-nm root mean square. For this, 3-D master structures were first fabricated by direct write laser-lithography with two-photon polymerization. The master structures were replicated into poly(methyl methacrylate) through a poly(dimethyl siloxane) intermediate replication stamp. Finally, all structures were surface-polished by selective high-energy photon exposure and thermal postprocessing. In this work, we focus on the comparison of the surface smoothening using either postprocessing or dedicated direct writing strategies. For this comparison, strategies for modifying the exposed voxel size and the writing discretization being the primary source of roughness were tested by sweeping the laser exposure dose for two different resist materials and objectives. In conclusion, the postprocessing smoothening resulted in a lower roughness compared to a direct writing strategy-even when 50-nm vertical discretization steps were used-and still enabled 10 times shorter writing times.

Optical nano-woodpiles: large-area metallic photonic crystals and metamaterials.

PubMed

Ibbotson, Lindsey A; Demetriadou, Angela; Croxall, Stephen; Hess, Ortwin; Baumberg, Jeremy J

2015-02-09

Metallic woodpile photonic crystals and metamaterials operating across the visible spectrum are extremely difficult to construct over large areas, because of the intricate three-dimensional nanostructures and sub-50 nm features demanded. Previous routes use electron-beam lithography or direct laser writing but widespread application is restricted by their expense and low throughput. Scalable approaches including soft lithography, colloidal self-assembly, and interference holography, produce structures limited in feature size, material durability, or geometry. By multiply stacking gold nanowire flexible gratings, we demonstrate a scalable high-fidelity approach for fabricating flexible metallic woodpile photonic crystals, with features down to 10 nm produced in bulk and at low cost. Control of stacking sequence, asymmetry, and orientation elicits great control, with visible-wavelength band-gap reflections exceeding 60%, and with strong induced chirality. Such flexible and stretchable architectures can produce metamaterials with refractive index near zero, and are easily tuned across the IR and visible ranges.

Fabricating Blazed Diffraction Gratings by X-Ray Lithography

NASA Technical Reports Server (NTRS)

Mouroulis, Pantazis; Hartley, Frank; Wilson, Daniel

2004-01-01

Gray-scale x-ray lithography is undergoing development as a technique for fabricating blazed diffraction gratings. As such, gray-scale x-ray lithography now complements such other grating-fabrication techniques as mechanical ruling, holography, ion etching, laser ablation, laser writing, and electron-beam lithography. Each of these techniques offers advantages and disadvantages for implementing specific grating designs; no single one of these techniques can satisfy the design requirements for all applications. Gray-scale x-ray lithography is expected to be advantageous for making gratings on steeper substrates than those that can be made by electron-beam lithography. This technique is not limited to sawtooth groove profiles and flat substrates: various groove profiles can be generated on arbitrarily shaped (including highly curved) substrates with the same ease as sawtooth profiles can be generated on flat substrates. Moreover, the gratings fabricated by this technique can be made free of ghosts (spurious diffraction components attributable to small spurious periodicities in the locations of grooves). The first step in gray-scale x-ray lithography is to conformally coat a substrate with a suitable photoresist. An x-ray mask (see Figure 1) is generated, placed between the substrate and a source of collimated x-rays, and scanned over the substrate so as to create a spatial modulation in the exposure of the photoresist. Development of the exposed photoresist results in a surface corrugation that corresponds to the spatial modulation and that defines the grating surface. The grating pattern is generated by scanning an appropriately shaped x-ray area mask along the substrate. The mask example of Figure 1 would generate a blazed grating profile when scanned in the perpendicular direction at constant speed, assuming the photoresist responds linearly to incident radiation. If the resist response is nonlinear, then the mask shape can be modified to account for the nonlinearity and produce a desired groove profile. An example of grating grooves generated by this technique is shown in Figure 2. A maximum relative efficiency of 88 percent has been demonstrated.

Graphene engineering by neon ion beams

DOE PAGES

Iberi, Vighter; Ievlev, Anton V.; Vlassiouk, Ivan; ...

2016-02-18

Achieving the ultimate limits of materials and device performance necessitates the engineering of matter with atomic, molecular, and mesoscale fidelity. While common for organic and macromolecular chemistry, these capabilities are virtually absent for 2D materials. In contrast to the undesired effect of ion implantation from focused ion beam (FIB) lithography with gallium ions, and proximity effects in standard e-beam lithography techniques, the shorter mean free path and interaction volumes of helium and neon ions offer a new route for clean, resist free nanofabrication. Furthermore, with the advent of scanning helium ion microscopy, maskless He + and Ne + beam lithographymore » of graphene based nanoelectronics is coming to the forefront. Here, we will discuss the use of energetic Ne ions in engineering graphene devices and explore the mechanical, electromechanical and chemical properties of the ion-milled devices using scanning probe microscopy (SPM). By using SPM-based techniques such as band excitation (BE) force modulation microscopy, Kelvin probe force microscopy (KPFM) and Raman spectroscopy, we demonstrate that the mechanical, electrical and optical properties of the exact same devices can be quantitatively extracted. Additionally, the effect of defects inherent in ion beam direct-write lithography, on the overall performance of the fabricated devices is elucidated.« less

Estimation of line dimensions in 3D direct laser writing lithography

NASA Astrophysics Data System (ADS)

Guney, M. G.; Fedder, G. K.

2016-10-01

Two photon polymerization (TPP) based 3D direct laser writing (3D-DLW) finds application in a wide range of research areas ranging from photonic and mechanical metamaterials to micro-devices. Most common structures are either single lines or formed by a set of interconnected lines as in the case of crystals. In order to increase the fidelity of these structures and reach the ultimate resolution, the laser power and scan speed used in the writing process should be chosen carefully. However, the optimization of these writing parameters is an iterative and time consuming process in the absence of a model for the estimation of line dimensions. To this end, we report a semi-empirical analytic model through simulations and fitting, and demonstrate that it can be used for estimating the line dimensions mostly within one standard deviation of the average values over a wide range of laser power and scan speed combinations. The model delimits the trend in onset of micro-explosions in the photoresist due to over-exposure and of low degree of conversion due to under-exposure. The model guides setting of high-fidelity and robust writing parameters of a photonic crystal structure without iteration and in close agreement with the estimated line dimensions. The proposed methodology is generalizable by adapting the model coefficients to any 3D-DLW setup and corresponding photoresist as a means to estimate the line dimensions for tuning the writing parameters.

Electrostatically focused addressable field emission array chips (AFEA's) for high-speed massively parallel maskless digital E-beam direct write lithography and scanning electron microscopy

DOEpatents

Thomas, Clarence E.; Baylor, Larry R.; Voelkl, Edgar; Simpson, Michael L.; Paulus, Michael J.; Lowndes, Douglas H.; Whealton, John H.; Whitson, John C.; Wilgen, John B.

2002-12-24

Systems and methods are described for addressable field emission array (AFEA) chips. A method of operating an addressable field-emission array, includes: generating a plurality of electron beams from a pluralitly of emitters that compose the addressable field-emission array; and focusing at least one of the plurality of electron beams with an on-chip electrostatic focusing stack. The systems and methods provide advantages including the avoidance of space-charge blow-up.

Diffractive optics fabricated by direct write methods with an electron beam

NASA Technical Reports Server (NTRS)

Kress, Bernard; Zaleta, David; Daschner, Walter; Urquhart, Kris; Stein, Robert; Lee, Sing H.

1993-01-01

State-of-the-art diffractive optics are fabricated using e-beam lithography and dry etching techniques to achieve multilevel phase elements with very high diffraction efficiencies. One of the major challenges encountered in fabricating diffractive optics is the small feature size (e.g. for diffractive lenses with small f-number). It is not only the e-beam system which dictates the feature size limitations, but also the alignment systems (mask aligner) and the materials (e-beam and photo resists). In order to allow diffractive optics to be used in new optoelectronic systems, it is necessary not only to fabricate elements with small feature sizes but also to do so in an economical fashion. Since price of a multilevel diffractive optical element is closely related to the e-beam writing time and the number of etching steps, we need to decrease the writing time and etching steps without affecting the quality of the element. To do this one has to utilize the full potentials of the e-beam writing system. In this paper, we will present three diffractive optics fabrication techniques which will reduce the number of process steps, the writing time, and the overall fabrication time for multilevel phase diffractive optics.

Electron irradiation induced amorphous SiO2 formation at metal oxide/Si interface at room temperature; electron beam writing on interfaces.

PubMed

Gurbán, S; Petrik, P; Serényi, M; Sulyok, A; Menyhárd, M; Baradács, E; Parditka, B; Cserháti, C; Langer, G A; Erdélyi, Z

2018-02-01

Al 2 O 3 (5 nm)/Si (bulk) sample was subjected to irradiation of 5 keV electrons at room temperature, in a vacuum chamber (pressure 1 × 10 -9 mbar) and formation of amorphous SiO 2 around the interface was observed. The oxygen for the silicon dioxide growth was provided by the electron bombardment induced bond breaking in Al 2 O 3 and the subsequent production of neutral and/or charged oxygen. The amorphous SiO 2 rich layer has grown into the Al 2 O 3 layer showing that oxygen as well as silicon transport occurred during irradiation at room temperature. We propose that both transports are mediated by local electric field and charged and/or uncharged defects created by the electron irradiation. The direct modification of metal oxide/silicon interface by electron-beam irradiation is a promising method of accomplishing direct write electron-beam lithography at buried interfaces.

Direct laser writing of microstructures on optically opaque and reflective surfaces

NASA Astrophysics Data System (ADS)

Rekštytė, S.; Jonavičius, T.; Malinauskas, M.

2014-02-01

Direct laser writing (DLW) based on ultra-localized polymerization is an efficient way to produce three-dimensional (3D) micro/nano-structures for diverse applications in science and industry. It is attractive for its flexibility to materialize CAD models out of wide spectrum of materials on the desired substrates. In case of direct laser lithography, photo-crosslinking can be achieved by tightly focusing ultrashort laser pulses to a photo- or thermo-polymers. Selectively exposing material to laser radiation allows creating fully 3D structures with submicrometer spatial resolution. In this paper we present DLW results of hybrid organic-inorganic material SZ2080 on optically opaque and reflective surfaces, such as silicon and various metals (Cr, Ti, Au). Our studies prove that one can precisely fabricate 2D and 3D structures with lower than 1 μm spatial resolution even on glossy or rough surfaces (surface roughness rms 0.068-0.670 μm) using sample translation velocities of up to 1 mm/s. Using femtosecond high pulse repetition rate laser, sample translation velocity can reach over 1 mm/s ensuring repeatable submicrometer structuring resolution.

Direct laser writing of polymer micro-ring resonator ultrasonic sensors

NASA Astrophysics Data System (ADS)

Wei, Heming; Krishnaswamy, Sridhar

2017-04-01

With the development of photoacoustic technology in recent years, ultrasound-related sensors play a vital role in a number of areas ranging from scientific research to nondestructive testing. Compared with the traditional PZT transducer as ultrasonic sensors, novel ultrasonic sensors based on optical methods such as micro-ring resonators have gained increasing attention. The total internal reflection of the light along the cavity results in light propagating in microcavities as whispering gallery modes (WGMs), which are extremely sensitive to change in the radius and refractive index of the cavity induced by ultrasound strain field. In this work, we present a polymer optical micro-ring resonator based ultrasonic sensor fabricated by direct laser writing optical lithography. The design consists of a single micro-ring and a straight tapered waveguide that can be directly coupled by single mode fibers (SMFs). The design and fabrication of the printed polymer resonator have been optimized to provide broad bandwidth and high optical quality factor to ensure high detection sensitivity. The experiments demonstrate the potential of the polymer micro-ring resonator to works as a high-performance ultrasonic sensor.

Software-based data path for raster-scanned multi-beam mask lithography

NASA Astrophysics Data System (ADS)

Rajagopalan, Archana; Agarwal, Ankita; Buck, Peter; Geller, Paul; Hamaker, H. Christopher; Rao, Nagswara

2016-10-01

According to the 2013 SEMATECH Mask Industry Survey,i roughly half of all photomasks are produced using laser mask pattern generator ("LMPG") lithography. LMPG lithography can be used for all layers at mature technology nodes, and for many non-critical and semi-critical masks at advanced nodes. The extensive use of multi-patterning at the 14-nm node significantly increases the number of critical mask layers, and the transition in wafer lithography from positive tone resist to negative tone resist at the 14-nm design node enables the switch from advanced binary masks back to attenuated phase shifting masks that require second level writes to remove unwanted chrome. LMPG lithography is typically used for second level writes due to its high productivity, absence of charging effects, and versatile non-actinic alignment capability. As multi-patterning use expands from double to triple patterning and beyond, the number of LMPG second level writes increases correspondingly. The desire to reserve the limited capacity of advanced electron beam writers for use when essential is another factor driving the demand for LMPG capacity. The increasing demand for cost-effective productivity has kept most of the laser mask writers ever manufactured running in production, sometimes long past their projected lifespan, and new writers continue to be built based on hardware developed some years ago.ii The data path is a case in point. While state-ofthe- art when first introduced, hardware-based data path systems are difficult to modify or add new features to meet the changing requirements of the market. As data volumes increase, design styles change, and new uses are found for laser writers, it is useful to consider a replacement for this critical subsystem. The availability of low-cost, high-performance, distributed computer systems combined with highly scalable EDA software lends itself well to creating an advanced data path system. EDA software, in routine production today, scales well to hundreds or even thousands of CPU-cores, offering the potential for virtually unlimited capacity. Features available in EDA software such as sizing, scaling, tone reversal, OPC, MPC, rasterization, and others are easily adapted to the requirements of a data path system. This paper presents the motivation, requirements, design and performance of an advanced, scalable software data path system suitable to support multi-beam laser mask lithography.

Direct writing on graphene 'paper' by manipulating electrons as 'invisible ink'.

PubMed

Zhang, Wei; Zhang, Qiang; Zhao, Meng-Qiang; Kuhn, Luise Theil

2013-07-12

The combination of self-assembly (bottom up) and nano-imprint lithography (top down) is an efficient and effective way to record information at the nanoscale by writing. The use of an electron beam for writing is quite a promising strategy; however, the 'paper' on which to save the information is not yet fully realized. Herein, graphene was selected as the thinnest paper for recording information at the nanoscale. In a transmission electron microscope, in situ high precision writing and drawing were achieved on graphene nanosheets by manipulating electrons with a 1 nm probe (probe current ~2 × 10(-9) A m(-2)) in scanning transmission electron microscopy (STEM) mode. Under electron probe irradiation, the carbon atom tends to displace within a crystalline specimen, and dangling bonds are formed from the original sp(2) bonding after local carbon atoms have been kicked off. The absorbed random foreign amorphous carbon assembles along the line of the scanning direction induced by secondary electrons and is immobilized near the edge. With the ultralow secondary electron yield of the graphene, additional foreign atoms determining the accuracy of the pattern have been greatly reduced near the targeting region. Therefore, the electron probe in STEM mode serves as invisible ink for nanoscale writing and drawing. These results not only shed new light on the application of graphene by the interaction of different forms of carbon, but also illuminate the interaction of different carbon forms through electron beams.

Optical nano-woodpiles: large-area metallic photonic crystals and metamaterials

PubMed Central

Ibbotson, Lindsey A.; Demetriadou, Angela; Croxall, Stephen; Hess, Ortwin; Baumberg, Jeremy J.

2015-01-01

Metallic woodpile photonic crystals and metamaterials operating across the visible spectrum are extremely difficult to construct over large areas, because of the intricate three-dimensional nanostructures and sub-50 nm features demanded. Previous routes use electron-beam lithography or direct laser writing but widespread application is restricted by their expense and low throughput. Scalable approaches including soft lithography, colloidal self-assembly, and interference holography, produce structures limited in feature size, material durability, or geometry. By multiply stacking gold nanowire flexible gratings, we demonstrate a scalable high-fidelity approach for fabricating flexible metallic woodpile photonic crystals, with features down to 10 nm produced in bulk and at low cost. Control of stacking sequence, asymmetry, and orientation elicits great control, with visible-wavelength band-gap reflections exceeding 60%, and with strong induced chirality. Such flexible and stretchable architectures can produce metamaterials with refractive index near zero, and are easily tuned across the IR and visible ranges. PMID:25660667

Multiphoton lithography using a high-repetition rate microchip laser.

PubMed

Ritschdorff, Eric T; Shear, Jason B

2010-10-15

Multiphoton lithography (MPL) provides a means to create prototype, three-dimensional (3D) materials for numerous applications in analysis and cell biology. A major impediment to the broad adoption of MPL in research laboratories is its reliance on high peak-power light sources, a requirement that typically has been met using expensive femtosecond titanium:sapphire lasers. Development of affordable microchip laser sources has the potential to substantially extend the reach of MPL, but previous lasers have provided relatively low pulse repetition rates (low kilohertz range), thereby limiting the rate at which microforms could be produced using this direct-write approach. In this report, we examine the MPL capabilities of a new, high-repetition-rate (36.6 kHz) microchip Nd:YAG laser. We show that this laser enables an approximate 4-fold decrease in fabrication times for protein-based microforms relative to the existing state-of-the-art microchip source and demonstrate its utility for creating complex 3D microarchitectures.

High Quality 3D Photonics using Nano Imprint Lithography of Fast Sol-gel Materials.

PubMed

Bar-On, Ofer; Brenner, Philipp; Siegle, Tobias; Gvishi, Raz; Kalt, Heinz; Lemmer, Uli; Scheuer, Jacob

2018-05-18

A method for the realization of low-loss integrated optical components is proposed and demonstrated. This approach is simple, fast, inexpensive, scalable for mass production, and compatible with both 2D and 3D geometries. The process is based on a novel dual-step soft nano imprint lithography process for producing devices with smooth surfaces, combined with fast sol-gel technology providing highly transparent materials. As a concrete example, this approach is demonstrated on a micro ring resonator made by direct laser writing (DLW) to achieve a quality factor improvement from one hundred thousand to more than 3 million. To the best of our knowledge this also sets a Q-factor record for UV-curable integrated micro-ring resonators. The process supports the integration of many types of materials such as light-emitting, electro-optic, piezo-electric, and can be readily applied to a wide variety of devices such as waveguides, lenses, diffractive elements and more.

Chalcogenide phase-change thin films used as grayscale photolithography materials.

PubMed

Wang, Rui; Wei, Jingsong; Fan, Yongtao

2014-03-10

Chalcogenide phase-change thin films are used in many fields, such as optical information storage and solid-state memory. In this work, we present another application of chalcogenide phase-change thin films, i.e., as grayscale photolithgraphy materials. The grayscale patterns can be directly inscribed on the chalcogenide phase-change thin films by a single process through direct laser writing method. In grayscale photolithography, the laser pulse can induce the formation of bump structure, and the bump height and size can be precisely controlled by changing laser energy. Bumps with different height and size present different optical reflection and transmission spectra, leading to the different gray levels. For example, the continuous-tone grayscale images of lifelike bird and cat are successfully inscribed onto Sb(2)Te(3) chalcogenide phase-change thin films using a home-built laser direct writer, where the expression and appearance of the lifelike bird and cat are fully presented. This work provides a way to fabricate complicated grayscale patterns using laser-induced bump structures onto chalcogenide phase-change thin films, different from current techniques such as photolithography, electron beam lithography, and focused ion beam lithography. The ability to form grayscale patterns of chalcogenide phase-change thin films reveals many potential applications in high-resolution optical images for micro/nano image storage, microartworks, and grayscale photomasks.

Lithographic microfabrication of biocompatible polymers for tissue engineering and lab-on-a-chip applications

NASA Astrophysics Data System (ADS)

Balciunas, Evaldas; Jonusauskas, Linas; Valuckas, Vytautas; Baltriukiene, Daiva; Bukelskiene, Virginija; Gadonas, Roaldas; Malinauskas, Mangirdas

2012-06-01

In this work, a combination of Direct Laser Writing (DLW), PoliDiMethylSiloxane (PDMS) soft lithography and UV lithography was used to create cm- scale microstructured polymer scaolds for cell culture experiments out of dierent biocompatible materials: novel hybrid organic-inorganic SZ2080, PDMS elastomer, biodegradable PEG- DA-258 and SU-8. Rabbit muscle-derived stem cells were seeded on the fabricated dierent periodicity scaolds to evaluate if the relief surface had any eect on cell proliferation. An array of microlenses was fabricated using DLW out of SZ2080 and replicated in PDMS and PEG-DA-258, showing good potential applicability of the used techniques in many other elds like micro- and nano- uidics, photonics, and MicroElectroMechanical Systems (MEMS). The synergetic employment of three dierent fabrication techniques allowed to produce desired objects with low cost, high throughput and precision as well as use materials that are dicult to process by other means (PDMS and PEG-DA-258). DLW is a relatively slow fabrication method, since the object has to be written point-by-point. By applying PDMS soft lithography, we were enabled to replicate laser-fabricated scaolds for stem cell growth and micro-optical elements for lab-on-a-chip applications with high speed, low cost and good reproducible quality.

Optical lithography of three-dimensional magnetophotonic microdevices

NASA Astrophysics Data System (ADS)

Nguyen, Dam Thuy Trang; Del Guercio, Olivia; Au, Thi Huong; Trinh, Duc Thien; Mai, Nguyen Phuong Thao; Lai, Ngoc Diep

2018-04-01

We have recently demonstrated a simple and low-cost fabrication technique, called low one-photon absorption direct laser writing, to realize desired polymeric microstructures. We present the use of this technique for fabrication of three-dimensional magnetophotonic devices on a photocurable homogeneous nanocomposite consisting of magnetite (Fe3O4) nanoparticles and a commercial SU8 photoresist. The fabricated magnetophotonic microstructures show strong response to an applied external magnetic field. Thus, various three-dimensional submicromechanical magnetophotonic devices, which can be mechanically driven by magnetic force, are designed and created. Potential applications of these devices are also discussed.

Improvement in electron-beam lithography throughput by exploiting relaxed patterning fidelity requirements with directed self-assembly

NASA Astrophysics Data System (ADS)

Yu, Hao Yun; Liu, Chun-Hung; Shen, Yu Tian; Lee, Hsuan-Ping; Tsai, Kuen Yu

2014-03-01

Line edge roughness (LER) influencing the electrical performance of circuit components is a key challenge for electronbeam lithography (EBL) due to the continuous scaling of technology feature sizes. Controlling LER within an acceptable tolerance that satisfies International Technology Roadmap for Semiconductors requirements while achieving high throughput become a challenging issue. Although lower dosage and more-sensitive resist can be used to improve throughput, they would result in serious LER-related problems because of increasing relative fluctuation in the incident positions of electrons. Directed self-assembly (DSA) is a promising technique to relax LER-related pattern fidelity (PF) requirements because of its self-healing ability, which may benefit throughput. To quantify the potential of throughput improvement in EBL by introducing DSA for post healing, rigorous numerical methods are proposed to simultaneously maximize throughput by adjusting writing parameters of EBL systems subject to relaxed LER-related PF requirements. A fast, continuous model for parameter sweeping and a hybrid model for more accurate patterning prediction are employed for the patterning simulation. The tradeoff between throughput and DSA self-healing ability is investigated. Preliminary results indicate that significant throughput improvements are achievable at certain process conditions.

Electron Beam/Optical Hybrid Lithography For The Production Of Gallium Arsenide Monolithic Microwave Integrated Circuits (Mimics)

NASA Astrophysics Data System (ADS)

Nagarajan, Rao M.; Rask, Steven D.

1988-06-01

A hybrid lithography technique is described in which selected levels are fabricated by high resolution direct write electron beam lithography and all other levels are fabricated optically. This technique permits subhalf micron geometries and the site-by-site alignment for each field written by electron beam lithography while still maintaining the high throughput possible with optical lithography. The goal is to improve throughput and reduce overall cost of fabricating MIMIC GaAS chips without compromising device performance. The lithography equipment used for these experiments is the Cambridge Electron beam vector scan system EBMF 6.4 capable of achieving ultra high current densities with a beam of circular cross section and a gaussian intensity profile operated at 20 kev. The optical aligner is a Karl Suss Contact aligner. The flexibility of the Cambridge electron beam system is matched to the less flexible Karl Suss contact aligner. The lithography related factors, such as image placement, exposure and process related analyses, which influence overlay, pattern quality and performance, are discussed. A process chip containing 3.2768mm fields in an eleven by eleven array was used for alignment evaluation on a 3" semi-insulating GaAS wafer. Each test chip contained five optical verniers and four Prometrix registration marks per field along with metal bumps for alignment marks. The process parameters for these chips are identical to those of HEMT/epi-MESFET ohmic contact and gate layer processes. These layers were used to evaluate the overlay accuracy because of their critical alignment and dimensional control requirements. Two cases were examined: (1) Electron beam written gate layers aligned to optically imaged ohmic contact layers and (2) Electron beam written gate layers aligned to electron beam written ohmic contact layers. The effect of substrate charging by the electron beam is also investigated. The resulting peak overlay error accuracies are: (1) Electron beam to optical with t 0.2μm (2 sigma) and (2) Electron beam to electron beam with f 0.lμm (2 sigma). These results suggest that the electron beam/optical hybrid lithography techniques could be used for MIMIC volume production as alignment tolerances required by GaAS chips are met in both cases. These results are discussed in detail.

Experimental, theoretical, and device application development of nanoscale focused electron-beam-induced deposition

NASA Astrophysics Data System (ADS)

Randolph, Steven Jeffrey

Electron-beam-induced deposition (EBID) is a highly versatile nanofabrication technique that allows for growth of a variety of materials with nanoscale precision and resolution. While several applications and studies of EBID have been reported and published, there is still a significant lack of understanding of the complex mechanisms involved in the process. Consequently, EBID process control is, in general, limited and certain common experimental results regarding nanofiber growth have yet to be fully explained. Such anomalous results have been addressed in this work both experimentally and by computer simulation. Specifically, a correlation between SiOx nanofiber deposition observations and the phenomenon of electron beam heating (EBH) was shown by comparison of thermal computer models and experimental results. Depending on the beam energy, beam current, and nanostructure geometry, the heat generated can be substantial and may influence the deposition rate. Temperature dependent EBID growth experiments qualitatively verified the results of the EBH model. Additionally, EBID was used to produce surface image layers for maskless, direct-write lithography (MDL). A single layer process used directly written SiOx features as a masking layer for amorphous silicon thin films. A bilayer process implemented a secondary masking layer consisting of standard photoresist into which a pattern---directly written by EBID tungsten---was transferred. The single layer process was found to be extremely sensitive to the etch selectivity of the plasma etch. In the bilayer process, EBID tungsten was written onto photoresist and the pattern transferred by means of oxygen plasma dry development following a brief refractory descum. Conditions were developed to reduce the spatial spread of electrons in the photoresist layer and obtain ˜ 35 nm lines. Finally, an EBID-based technique for field emitter repair was applied to the Digital Electrostatically focused e-beam Array Lithography (DEAL) parallel electron beam lithography configuration to repair damaged or missing carbon nanofiber cathodes. The I-V response and lithography results from EBID tungsten-based devices were comparable to CNF-based DEAL devices indicating a successful repair technique.

Fabrication of metasurface-based infrared absorber structures using direct laser write lithography

NASA Astrophysics Data System (ADS)

Fanyaeu, Ihar; Mizeikis, Vygantas

2016-03-01

We report fabrication and optical properties of ultra-thin polarization-invariant electromagnetic absorber metasurface for infra-red spectral. The absorber structure, which uses three-dimensional architecture is based on single-turn metallic helices arranged into a periodic square lattice on a metallic substrate, is expected to exhibit total resonant absorption due to balanced coupling between resonances of the helices. The structure was designed using numerical simulations aiming to tune the total absorption resonance to infra-red wavelength range by appropriately downscaling the unit cell of the structure, and taking into account dielectric dispersion and losses of the metal. The designed structures were subsequently fabricated using femtosecond direct laser write technique in a dielectric photoresist, and subsequent metallisation by gold sputtering. In accordance with the expectations, the structure was found to exhibit resonant absorption centred near the wavelength of 6 - 9 µm, with peak absorption in excess of 82%. The absorber metasurface may be applied in various areas of science and technology, such as harvesting infra-red radiation in thermal detectors and energy converters.

Sub-10-nm suspended nano-web formation by direct laser writing

NASA Astrophysics Data System (ADS)

Wang, Sihao; Yu, Ye; Liu, Hailong; Lim, Kevin T. P.; Madurai Srinivasan, Bharathi; Zhang, Yong Wei; Yang, Joel K. W.

2018-06-01

A diffraction-limited three-dimensional (3D) direct laser writing (DLW) system based on two-photon polymerization can routinely pattern structures at the 100 nm length scale. Several schemes have been developed to improve the patterning resolution of 3D DLW but often require customized resist formulations or multi-wavelength exposures. Here, we introduce a scheme to produce suspended nano-webs with feature sizes below 10 nm in IP-Dip resist using sub-threshold exposure conditions in a commercial DLW system. The narrowest suspended lines (nano-webs) measured 7 nm in width. Larger ∼20 nm nano-webs were patterned with ∼80% yield at increased laser powers. In addition, closely spaced nano-gaps with a center-to-center distance of 33 nm were produced by patterning vertically displaced suspended lines followed by metal deposition and liftoff. We provide hypotheses and present preliminary results for a mechanism involving the initiation of a percolative path and a strain-induced narrowing in the nano-web formation. Our approach allows selective features to be patterned with dimensions comparable to the sub-10 nm patterning capability of electron-beam lithography (EBL).

OML: optical maskless lithography for economic design prototyping and small-volume production

NASA Astrophysics Data System (ADS)

Sandstrom, Tor; Bleeker, Arno; Hintersteiner, Jason; Troost, Kars; Freyer, Jorge; van der Mast, Karel

2004-05-01

The business case for Maskless Lithography is more compelling than ever before, due to more critical processes, rising mask costs and shorter product cycles. The economics of Maskless Lithography gives a crossover volume from Maskless to mask-based lithography at surprisingly many wafers per mask for surprisingly few wafers per hour throughput. Also, small-volume production will in many cases be more economical with Maskless Lithography, even when compared to "shuttle" schemes, reticles with multiple layers, etc. The full benefit of Maskless Lithography is only achievable by duplicating processes that are compatible with volume production processes on conventional scanners. This can be accomplished by the integration of pattern generators based on spatial light modulator technology with state-of-the-art optical scanner systems. This paper reports on the system design of an Optical Maskless Scanner in development by ASML and Micronic: small-field optics with high demagnification, variable NA and illumination schemes, spatial light modulators with millions of MEMS mirrors on CMOS drivers, a data path with a sustained data flow of more than 250 GPixels per second, stitching of sub-fields to scanner fields, and rasterization and writing strategies for throughput and good image fidelity. Predicted lithographic performance based on image simulations is also shown.

Manipulation and simulations of thermal field profiles in laser heat-mode lithography

NASA Astrophysics Data System (ADS)

Wei, Tao; Wei, Jingsong; Wang, Yang; Zhang, Long

2017-12-01

Laser heat-mode lithography is a very useful method for high-speed fabrication of large-area micro/nanostructures. To obtain nanoscale pattern structures, one needs to manipulate the thermal diffusion channels. This work reports the manipulation of the thermal diffusion in laser heat-mode lithography and provides methods to restrain the in-plane thermal diffusion and improve the out-of-plane thermal diffusion. The thermal field profiles in heat-mode resist thin films have been given. It is found that the size of the heat-spot can be decreased by decreasing the thickness of the heat-mode resist thin films, inserting the thermal conduction layers, and shortening the laser irradiation time. The optimized laser writing strategy is also given, where the in-plane thermal diffusion is completely restrained and the out-of-plane thermal diffusion is improved. The heat-spot size is almost equal to that of the laser spot, accordingly. This work provides a very important guide to laser heat-mode lithography.

Four-port coupled channel-guide device based on 2D photonic crystal structure

NASA Astrophysics Data System (ADS)

Camargo, Edilson A.; Chong, Harold M. H.; De La Rue, Richard M.

2004-12-01

We have fabricated and measured a four-port coupled channel-waveguide device using W1 channel waveguides oriented along ΓK directions in a two-dimensional (2D) hole-based planar photonic crystal (PhC) based on silicon-on-insulator (SOI) waveguide material, at operation wavelengths around 1550 nm. 2D FDTD simulations and experimental results are shown and compared. The structure has been designed using a mode conversion approach, combined with coupled-mode concepts. The overall length of the photonic crystal structure is typically about 39 μm and the structure has been fabricated using a combination of direct-write electron-beam lithography (EBL) and dry-etch processing. Devices were measured using a tunable laser with end-fire coupling into the planar structure.

Semi-contact-writing of polymer molds for prototyping PDMS chips with low surface roughness, sharp edges and locally varying channel heights

NASA Astrophysics Data System (ADS)

Gutzweiler, Ludwig; Stumpf, Fabian; Tanguy, Laurent; Roth, Guenter; Koltay, Peter; Zengerle, Roland; Riegger, Lutz

2016-04-01

Microfluidic systems fabricated in polydimethylsiloxane (PDMS) enable a broad variety of applications and are widespread in the field of Lab-on-a-Chip. Here we demonstrate semi-contact-writing, a novel method for fabrication of polymer based molds for casting microfluidic PDMS chips in a highly flexible, time and cost-efficient manner. The method is related to direct-writing of an aqueous polymer solution on a planar glass substrate and substitutes conventional, time- and cost-consuming UV-lithography. This technique facilitates on-demand prototyping in a low-cost manner and is therefore ideally suited for rapid chip layout iterations. No cleanroom facilities and less expertise are required. Fabrication time from scratch to ready-to-use PDMS-chip is less than 5 h. This polymer writing method enables structure widths down to 140 μm and controllable structure heights ranging from 5.5 μm for writing single layers up to 98 μm by stacking. As a unique property, freely selectable height variations across a substrate can be achieved by application of local stacking. Furthermore, the molds exhibit low surface roughness (R a   =  24 nm, R RMS  =  28 nm) and high fidelity edge sharpness. We validated the method by fabrication of molds to cast PDMS chips for droplet based flow-through PCR with single-cell sensitivity.

Direct Metal Writing and Precise Positioning of Gold Nanoparticles within Microfluidic Channels for SERS Sensing of Gaseous Analytes.

PubMed

Lee, Mian Rong; Lee, Hiang Kwee; Yang, Yijie; Koh, Charlynn Sher Lin; Lay, Chee Leng; Lee, Yih Hong; Phang, In Yee; Ling, Xing Yi

2017-11-15

We demonstrate a one-step precise direct metal writing of well-defined and densely packed gold nanoparticle (AuNP) patterns with tunable physical and optical properties. We achieve this by using two-photon lithography on a Au precursor comprising poly(vinylpyrrolidone) (PVP) and ethylene glycol (EG), where EG promotes higher reduction rates of Au(III) salt via polyol reduction. Hence, clusters of monodisperse AuNP are generated along raster scanning of the laser, forming high-particle-density, well-defined structures. By varying the PVP concentration, we tune the AuNP size from 27.3 to 65.0 nm and the density from 172 to 965 particles/μm 2 , corresponding to a surface roughness of 12.9 to 67.1 nm, which is important for surface-based applications such as surface-enhanced Raman scattering (SERS). We find that the microstructures exhibit an SERS enhancement factor of >10 5 and demonstrate remote writing of well-defined Au microstructures within a microfluidic channel for the SERS detection of gaseous molecules. We showcase in situ SERS monitoring of gaseous 4-methylbenzenethiol and real-time detection of multiple small gaseous species with no specific affinity to Au. This one-step, laser-induced fabrication of AuNP microstructures ignites a plethora of possibilities to position desired patterns directly onto or within most surfaces for the future creation of multifunctional lab-on-a-chip devices.

Electron beam mask writer EBM-9500 for logic 7nm node generation

NASA Astrophysics Data System (ADS)

Matsui, Hideki; Kamikubo, Takashi; Nakahashi, Satoshi; Nomura, Haruyuki; Nakayamada, Noriaki; Suganuma, Mizuna; Kato, Yasuo; Yashima, Jun; Katsap, Victor; Saito, Kenichi; Kobayashi, Ryoei; Miyamoto, Nobuo; Ogasawara, Munehiro

2016-10-01

Semiconductor scaling is slowing down because of difficulties of device manufacturing below logic 7nm node generation. Various lithography candidates which include ArF immersion with resolution enhancement technology (like Inversed Lithography technology), Extreme Ultra Violet lithography and Nano Imprint lithography are being developed to address the situation. In such advanced lithography, shot counts of mask patterns are estimated to increase explosively in critical layers, and then it is hoped that multi beam mask writer (MBMW) is released to handle them within realistic write time. However, ArF immersion technology with multiple patterning will continue to be a mainstream lithography solution for most of the layers. Then, the shot counts in less critical layers are estimated to be stable because of the limitation of resolution in ArF immersion technology. Therefore, single beam mask writer (SBMW) can play an important role for mask production still, relative to MBMW. Also the demand of SBMW seems actually strong for the logic 7nm node. To realize this, we have developed a new SBMW, EBM-9500 for mask fabrication in this generation. A newly introduced electron beam source enables higher current density of 1200A/cm2. Heating effect correction function has also been newly introduced to satisfy the requirements for both pattern accuracy and throughput. In this paper, we will report the configuration and performance of EBM-9500.

Silica-on-silicon waveguide quantum circuits.

PubMed

Politi, Alberto; Cryan, Martin J; Rarity, John G; Yu, Siyuan; O'Brien, Jeremy L

2008-05-02

Quantum technologies based on photons will likely require an integrated optics architecture for improved performance, miniaturization, and scalability. We demonstrate high-fidelity silica-on-silicon integrated optical realizations of key quantum photonic circuits, including two-photon quantum interference with a visibility of 94.8 +/- 0.5%; a controlled-NOT gate with an average logical basis fidelity of 94.3 +/- 0.2%; and a path-entangled state of two photons with fidelity of >92%. These results show that it is possible to directly "write" sophisticated photonic quantum circuits onto a silicon chip, which will be of benefit to future quantum technologies based on photons, including information processing, communication, metrology, and lithography, as well as the fundamental science of quantum optics.

Nanofabrication with a helium ion microscope

NASA Astrophysics Data System (ADS)

Maas, Diederik; van Veldhoven, Emile; Chen, Ping; Sidorkin, Vadim; Salemink, Huub; van der Drift, Emile..; Alkemade, Paul

2010-03-01

The recently introduced helium ion microscope (HIM) is capable of imaging and fabrication of nanostructures thanks to its sub-nanometer sized ion probe. The unique interaction of the helium ions with the sample material provides very localized secondary electron emission, thus providing a valuable signal for high-resolution imaging as well as a mechanism for very precise nanofabrication. The low proximity effects, due to the low yield of backscattered ions and the confinement of the forward scattered ions into a narrow cone, enable patterning of ultra-dense sub-10 nm structures. This paper presents various nanofabrication results obtained with direct-write, with scanning helium ion beam lithography, and with helium ion beam induced deposition.

Characterization of photochromic computer-generated holograms for optical testing

NASA Astrophysics Data System (ADS)

Pariani, Giorgio; Bertarelli, Chiara; Bianco, Andrea; Schaal, Frederik; Pruss, Christof

2012-09-01

We investigate the possibility to produce photochromic CGHs with maskless lithography methods. For this purpose, optical properties and requirements of photochromic materials will be shown. A diarylethene-based polyurethane is developed and characterized. The resolution limit and the in uence of the writing parameters on the produced patterns, namely speed rate and light power, have been determined. After the optimization of the writing process, gratings and Fresnel Zone Plates are produced on the photochromic layer and diraction eciencies are measured. Improvements and perspectives will be discussed.

Tilted pillar array fabrication by the combination of proton beam writing and soft lithography for microfluidic cell capture Part 2: Image sequence analysis based evaluation and biological application.

PubMed

Járvás, Gábor; Varga, Tamás; Szigeti, Márton; Hajba, László; Fürjes, Péter; Rajta, István; Guttman, András

2018-02-01

As a continuation of our previously published work, this paper presents a detailed evaluation of a microfabricated cell capture device utilizing a doubly tilted micropillar array. The device was fabricated using a novel hybrid technology based on the combination of proton beam writing and conventional lithography techniques. Tilted pillars offer unique flow characteristics and support enhanced fluidic interaction for improved immunoaffinity based cell capture. The performance of the microdevice was evaluated by an image sequence analysis based in-house developed single-cell tracking system. Individual cell tracking allowed in-depth analysis of the cell-chip surface interaction mechanism from hydrodynamic point of view. Simulation results were validated by using the hybrid device and the optimized surface functionalization procedure. Finally, the cell capture capability of this new generation microdevice was demonstrated by efficiently arresting cells from a HT29 cell-line suspension. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Tilted pillar array fabrication by the combination of proton beam writing and soft lithography for microfluidic cell capture: Part 1 Design and feasibility.

PubMed

Rajta, Istvan; Huszánk, Robert; Szabó, Atilla T T; Nagy, Gyula U L; Szilasi, Szabolcs; Fürjes, Peter; Holczer, Eszter; Fekete, Zoltan; Járvás, Gabor; Szigeti, Marton; Hajba, Laszlo; Bodnár, Judit; Guttman, Andras

2016-02-01

Design, fabrication, integration, and feasibility test results of a novel microfluidic cell capture device is presented, exploiting the advantages of proton beam writing to make lithographic irradiations under multiple target tilting angles and UV lithography to easily reproduce large area structures. A cell capture device is demonstrated with a unique doubly tilted micropillar array design for cell manipulation in microfluidic applications. Tilting the pillars increased their functional surface, therefore, enhanced fluidic interaction when special bioaffinity coating was used, and improved fluid dynamic behavior regarding cell culture injection. The proposed microstructures were capable to support adequate distribution of body fluids, such as blood, spinal fluid, etc., between the inlet and outlet of the microfluidic sample reservoirs, offering advanced cell capture capability on the functionalized surfaces. The hydrodynamic characteristics of the microfluidic systems were tested with yeast cells (similar size as red blood cells) for efficient capture. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Manufacturability study of masks created by inverse lithography technology (ILT)

NASA Astrophysics Data System (ADS)

Martin, Patrick M.; Progler, C. J.; Xiao, G.; Gray, R.; Pang, L.; Liu, Y.

2005-11-01

As photolithography is pushed to fabricate deep-sub wavelength devices for 90nm, 65nm and smaller technology nodes using available exposure tools (i.e., 248nm, 193nm steppers), photomask capability is becoming extremely critical. For example, PSM masks require more complicated processing; aggressive OPC makes the writing time longer and sometimes unpredictable; and, high MEEF imposes much more stringent demands on mask quality. Therefore, in order for any new lithography technology to be adopted into production, mask manufacturability must be studied thoroughly and carefully. In this paper we will present the mask manufacturability study on mask patterns created using Inverse Lithography Technology (ILT). Unlike conventional OPC methodologies, ILT uses a unique outcome-based technology to mathematically determine the mask features that produce the desired on-wafer results. ILT solves the most critical litho challenges of the deep sub-wavelength era. Potential benefits include: higher yield; expanded litho process windows; superb pattern fidelity at 90, 65 & 45-nm nodes; and reduced time-to-silicon - all without changing the existing lithography infrastructure and design-to-silicon flow. In this study a number of cell structures were selected and used as test patterns. "Luminized patterns" were generated for binary mask and attenuated phase-shift mask. Both conventional OPC patterns and "luminized patterns" were put on a test reticle side by side, and they all have a number of variations in term of correction aggressivity level and mask complexity. Mask manufacturability, including data fracturing, writing time, mask inspection, and metrology were studied. The results demonstrate that, by optimizing the inspection recipe, masks created using ILT technology can be made and qualified using current processes with a reasonable turn-around time.

Manufacturing of the ISO 25178-70 material measures with direct laser writing: a feasibility study

NASA Astrophysics Data System (ADS)

Eifler, M.; Hering, J.; von Freymann, G.; Seewig, J.

2018-06-01

The standard ISO 25178-70 defines material measures for the calibration of 2D- and 3D-topography measurement devices. Some of the suggested material measures are established within the industrial application for a long time while others have not yet been extensively researched regarding their practical abilities. This paper describes a holistic and systematic investigation of the ISO 25178-70 material measures. The manufacturing of the suggested geometries is executed with two-photon laser lithography, alias direct laser writing (DLW). Since this manufacturing process is not yet frequently used in a material measures context, it is examined regarding its suitability for the fabrication of the ISO 25178-70 material measures. With DLW, it is possible to manufacture multiple material measures on one sample in order to enable a comprehensive calibration of optical topography measurement devices. The manufactured ISO 25178-70 geometries are examined using different 3D-topography measuring devices. In doing so, their abilities regarding the calibration of the devices can be evaluated and the practical feasibility of their industrial application is assessed. For the review of this practical usefulness, varying calibration and evaluation strategies are taken into account.

One-step fabrication of submicrostructures by low one-photon absorption direct laser writing technique with local thermal effect

NASA Astrophysics Data System (ADS)

Nguyen, Dam Thuy Trang; Tong, Quang Cong; Ledoux-Rak, Isabelle; Lai, Ngoc Diep

2016-01-01

In this work, local thermal effect induced by a continuous-wave laser has been investigated and exploited to optimize the low one-photon absorption (LOPA) direct laser writing (DLW) technique for fabrication of polymer-based microstructures. It was demonstrated that the temperature of excited SU8 photoresist at the focusing area increases to above 100 °C due to high excitation intensity and becomes stable at that temperature thanks to the use of a continuous-wave laser at 532 nm-wavelength. This optically induced thermal effect immediately completes the crosslinking process at the photopolymerized region, allowing obtain desired structures without using the conventional post-exposure bake (PEB) step, which is usually realized after the exposure. Theoretical calculation of the temperature distribution induced by local optical excitation using finite element method confirmed the experimental results. LOPA-based DLW technique combined with optically induced thermal effect (local PEB) shows great advantages over the traditional PEB, such as simple, short fabrication time, high resolution. In particular, it allowed the overcoming of the accumulation effect inherently existed in optical lithography by one-photon absorption process, resulting in small and uniform structures with very short lattice constant.

Mask manufacturing of advanced technology designs using multi-beam lithography (part 2)

NASA Astrophysics Data System (ADS)

Green, Michael; Ham, Young; Dillon, Brian; Kasprowicz, Bryan; Hur, Ik Boum; Park, Joong Hee; Choi, Yohan; McMurran, Jeff; Kamberian, Henry; Chalom, Daniel; Klikovits, Jan; Jurkovic, Michal; Hudek, Peter

2016-09-01

As optical lithography is extended into 10nm and below nodes, advanced designs are becoming a key challenge for mask manufacturers. Techniques including advanced optical proximity correction (OPC) and Inverse Lithography Technology (ILT) result in structures that pose a range of issues across the mask manufacturing process. Among the new challenges are continued shrinking sub-resolution assist features (SRAFs), curvilinear SRAFs, and other complex mask geometries that are counter-intuitive relative to the desired wafer pattern. Considerable capability improvements over current mask making methods are necessary to meet the new requirements particularly regarding minimum feature resolution and pattern fidelity. Advanced processes using the IMS Multi-beam Mask Writer (MBMW) are feasible solutions to these coming challenges. In this paper, Part 2 of our study, we further characterize an MBMW process for 10nm and below logic node mask manufacturing including advanced pattern analysis and write time demonstration.

High Dynamic Range (Δn) Two-Stage Photopolymers via Enhanced Solubility of a High Refractive Index Acrylate Writing Monomer.

PubMed

Alim, Marvin D; Glugla, David J; Mavila, Sudheendran; Wang, Chen; Nystrom, Philip D; Sullivan, Amy C; McLeod, Robert R; Bowman, Christopher N

2018-01-10

Holographic photopolymers capable of high refractive index modulation (Δn) on the order of 10 -2 are integral for the fabrication of functional holographic optical elements that are useful in a myriad of optical applications. In particular, to address the deficiency of suitable high refractive index writing monomers for use in two-stage holographic formulations, here we report a novel high refractive index writing monomer, 1,3-bis(phenylthio)-2-propyl acrylate (BPTPA), simultaneously possessing enhanced solubility in a low refractive index (n = 1.47) urethane matrix. When examined in comparison to a widely used high refractive index monomer, 2,4,6-tribromophenyl acrylate, BPTPA exhibited superior solubility in a stage 1 urethane matrix of approximately 50% with a 20% higher refractive index increase per unit amount of the writing monomer for stage 2 polymerizations. Formulations with 60 wt % loading of BPTPA exhibit a peak-to-mean holographic Δn ≈ 0.029 without obvious deficiencies in transparency, color, or scatter. To the best of our knowledge, this value is the highest reported in the peer-reviewed literature for a transmission hologram. The capabilities and versatility of BPTPA-based formulations are demonstrated at varying length scales via demonstrative refractive index gradient structure examples including direct laser write, projection mask lithography of a 1″ diameter Fresnel lens, and ∼100% diffraction efficiency volume transmission holograms with a 1 μm fringe spacing in 11 μm thick samples.

Stitching-error reduction in gratings by shot-shifted electron-beam lithography

NASA Technical Reports Server (NTRS)

Dougherty, D. J.; Muller, R. E.; Maker, P. D.; Forouhar, S.

2001-01-01

Calculations of the grating spatial-frequency spectrum and the filtering properties of multiple-pass electron-beam writing demonstrate a tradeoff between stitching-error suppression and minimum pitch separation. High-resolution measurements of optical-diffraction patterns show a 25-dB reduction in stitching-error side modes.

Aqueous multiphoton lithography with multifunctional silk-centred bio-resists.

PubMed

Sun, Yun-Lu; Li, Qi; Sun, Si-Ming; Huang, Jing-Chun; Zheng, Bo-Yuan; Chen, Qi-Dai; Shao, Zheng-Zhong; Sun, Hong-Bo

2015-10-16

Silk and silk fibroin, the biomaterial from nature, nowadays are being widely utilized in many cutting-edge micro/nanodevices/systems via advanced micro/nanofabrication techniques. Herein, for the first time to our knowledge, we report aqueous multiphoton lithography of diversiform-regenerated-silk-fibroin-centric inks using noncontact and maskless femtosecond laser direct writing (FsLDW). Initially, silk fibroin was FsLDW-crosslinked into arbitrary two/three-dimensional micro/nanostructures with good elastic properties merely using proper photosensitizers. More interestingly, silk/metal composite micro/nanodevices with multidimension-controllable metal content can be FsLDW-customized through laser-induced simultaneous fibroin oxidation/crosslinking and metal photoreduction using the simplest silk/Ag(+) or silk/[AuCl4](-) aqueous resists. Noticeably, during FsLDW, fibroin functions as biological reductant and matrix, while metal ions act as the oxidant. A FsLDW-fabricated prototyping silk/Ag microelectrode exhibited 10(4)-Ω(-1 ) m(-1)-scale adjustable electric conductivity. This work not only provides a powerful development to silk micro/nanoprocessing techniques but also creates a novel way to fabricate multifunctional metal/biomacromolecule complex micro/nanodevices for applications such as micro/nanoscale mechanical and electrical bioengineering and biosystems.

Aqueous multiphoton lithography with multifunctional silk-centred bio-resists

PubMed Central

Sun, Yun-Lu; Li, Qi; Sun, Si-Ming; Huang, Jing-Chun; Zheng, Bo-Yuan; Chen, Qi-Dai; Shao, Zheng-Zhong; Sun, Hong-Bo

2015-01-01

Silk and silk fibroin, the biomaterial from nature, nowadays are being widely utilized in many cutting-edge micro/nanodevices/systems via advanced micro/nanofabrication techniques. Herein, for the first time to our knowledge, we report aqueous multiphoton lithography of diversiform-regenerated-silk-fibroin-centric inks using noncontact and maskless femtosecond laser direct writing (FsLDW). Initially, silk fibroin was FsLDW-crosslinked into arbitrary two/three-dimensional micro/nanostructures with good elastic properties merely using proper photosensitizers. More interestingly, silk/metal composite micro/nanodevices with multidimension-controllable metal content can be FsLDW-customized through laser-induced simultaneous fibroin oxidation/crosslinking and metal photoreduction using the simplest silk/Ag+ or silk/[AuCl4]− aqueous resists. Noticeably, during FsLDW, fibroin functions as biological reductant and matrix, while metal ions act as the oxidant. A FsLDW-fabricated prototyping silk/Ag microelectrode exhibited 104-Ω−1 m−1-scale adjustable electric conductivity. This work not only provides a powerful development to silk micro/nanoprocessing techniques but also creates a novel way to fabricate multifunctional metal/biomacromolecule complex micro/nanodevices for applications such as micro/nanoscale mechanical and electrical bioengineering and biosystems. PMID:26472600

Aqueous multiphoton lithography with multifunctional silk-centred bio-resists

NASA Astrophysics Data System (ADS)

Sun, Yun-Lu; Li, Qi; Sun, Si-Ming; Huang, Jing-Chun; Zheng, Bo-Yuan; Chen, Qi-Dai; Shao, Zheng-Zhong; Sun, Hong-Bo

2015-10-01

Silk and silk fibroin, the biomaterial from nature, nowadays are being widely utilized in many cutting-edge micro/nanodevices/systems via advanced micro/nanofabrication techniques. Herein, for the first time to our knowledge, we report aqueous multiphoton lithography of diversiform-regenerated-silk-fibroin-centric inks using noncontact and maskless femtosecond laser direct writing (FsLDW). Initially, silk fibroin was FsLDW-crosslinked into arbitrary two/three-dimensional micro/nanostructures with good elastic properties merely using proper photosensitizers. More interestingly, silk/metal composite micro/nanodevices with multidimension-controllable metal content can be FsLDW-customized through laser-induced simultaneous fibroin oxidation/crosslinking and metal photoreduction using the simplest silk/Ag+ or silk/[AuCl4]- aqueous resists. Noticeably, during FsLDW, fibroin functions as biological reductant and matrix, while metal ions act as the oxidant. A FsLDW-fabricated prototyping silk/Ag microelectrode exhibited 104-Ω-1 m-1-scale adjustable electric conductivity. This work not only provides a powerful development to silk micro/nanoprocessing techniques but also creates a novel way to fabricate multifunctional metal/biomacromolecule complex micro/nanodevices for applications such as micro/nanoscale mechanical and electrical bioengineering and biosystems.

Complete data preparation flow for Massively Parallel E-Beam lithography on 28nm node full-field design

NASA Astrophysics Data System (ADS)

Fay, Aurélien; Browning, Clyde; Brandt, Pieter; Chartoire, Jacky; Bérard-Bergery, Sébastien; Hazart, Jérôme; Chagoya, Alexandre; Postnikov, Sergei; Saib, Mohamed; Lattard, Ludovic; Schavione, Patrick

2016-03-01

Massively parallel mask-less electron beam lithography (MP-EBL) offers a large intrinsic flexibility at a low cost of ownership in comparison to conventional optical lithography tools. This attractive direct-write technique needs a dedicated data preparation flow to correct both electronic and resist processes. Moreover, Data Prep has to be completed in a short enough time to preserve the flexibility advantage of MP-EBL. While the MP-EBL tools have currently entered an advanced stage of development, this paper will focus on the data preparation side of the work for specifically the MAPPER Lithography FLX-1200 tool [1]-[4], using the ASELTA Nanographics Inscale software. The complete flow as well as the methodology used to achieve a full-field layout data preparation, within an acceptable cycle time, will be presented. Layout used for Data Prep evaluation was one of a 28 nm technology node Metal1 chip with a field size of 26x33mm2, compatible with typical stepper/scanner field sizes and wafer stepping plans. Proximity Effect Correction (PEC) was applied to the entire field, which was then exported as a single file to MAPPER Lithography's machine format, containing fractured shapes and dose assignments. The Soft Edge beam to beam stitching method was employed in the specific overlap regions defined by the machine format as well. In addition to PEC, verification of the correction was included as part of the overall data preparation cycle time. This verification step was executed on the machine file format to ensure pattern fidelity and accuracy as late in the flow as possible. Verification over the full chip, involving billions of evaluation points, is performed both at nominal conditions and at Process Window corners in order to ensure proper exposure and process latitude. The complete MP-EBL data preparation flow was demonstrated for a 28 nm node Metal1 layout in 37 hours. The final verification step shows that the Edge Placement Error (EPE) is kept below 2.25 nm over an exposure dose variation of 8%.

L10 FePtCu bit patterned media

NASA Astrophysics Data System (ADS)

Brombacher, C.; Grobis, M.; Lee, J.; Fidler, J.; Eriksson, T.; Werner, T.; Hellwig, O.; Albrecht, M.

2012-01-01

Chemically ordered 5 nm-thick L10 FePtCu films with strong perpendicular magnetic anisotropy were post-patterned by nanoimprint lithography into a dot array over a 3 mm-wide circumferential band on a 3 inch Si wafer. The dots with a diameter of 30 nm and a center-to-center pitch of 60 nm appear as single domain and reveal an enhanced switching field as compared to the continuous film. We demonstrate successful recording on a single track using shingled writing with a conventional hard disk drive write/read head.

Tunable photonic nanojet formed by generalized Luneburg lens.

PubMed

Mao, Xiurun; Yang, Yang; Dai, Haitao; Luo, Dan; Yao, Baoli; Yan, Shaohui

2015-10-05

Nanojet has been emerging as an interesting topic in variety photonics applications. In this paper, inspired by the properties of generalized Luneburg lens (GLLs), a two-dimensional photonic nanojet system has been developed, which focal distance can be tuned by engineering the refractive index profile of GLLs. Simulation and analysis results show that the maximum light intensity, transverse and longitudinal dimensions of the photonic nanojet are dependent on the focal distance of the GLLs, thereby, by simply varying the focal distance, it is possible to obtain localized photon fluxes with different power characteristics and spatial dimensions. This can be of interest for many promising applications, such as high-resolution optical detection, optical manipulation, technology of direct-write nano-patterning and nano-lithography.

EUV lithography reticles fabricated without the use of a patterned absorber

DOEpatents

Stearns, Daniel G.; Sweeney, Donald W.; Mirkarimi, Paul B.

2006-05-23

Absorber material used in conventional EUVL reticles is eliminated by introducing a direct modulation in the complex-valued reflectance of the multilayer. A spatially localized energy source such as a focused electron or ion beam directly writes a reticle pattern onto the reflective multilayer coating. Interdiffusion is activated within the film by an energy source that causes the multilayer period to contract in the exposed regions. The contraction is accurately determined by the energy dose. A controllable variation in the phase and amplitude of the reflected field in the reticle plane is produced by the spatial modulation of the multilayer period. This method for patterning an EUVL reticle has the advantages (1) avoiding the process steps associated with depositing and patterning an absorber layer and (2) providing control of the phase and amplitude of the reflected field with high spatial resolution.

Method for fabricating reticles for EUV lithography without the use of a patterned absorber

DOEpatents

Stearns, Daniel G [Los Altos, CA; Sweeney, Donald W [San Ramon, CA; Mirkarimi, Paul B [Sunol, CA

2003-10-21

Absorber material used in conventional EUVL reticles is eliminated by introducing a direct modulation in the complex-valued reflectance of the multilayer. A spatially localized energy source such as a focused electron or ion beam directly writes a reticle pattern onto the reflective multilayer coating. Interdiffusion is activated within the film by an energy source that causes the multilayer period to contract in the exposed regions. The contraction is accurately determined by the energy dose. A controllable variation in the phase and amplitude of the reflected field in the reticle plane is produced by the spatial modulation of the multilayer period. This method for patterning an EUVL reticle has the advantages of (1) avoiding the process steps associated with depositing and patterning an absorber layer and (2) providing control of the phase and amplitude of the reflected field with high spatial resolution.

1D design style implications for mask making and CEBL

NASA Astrophysics Data System (ADS)

Smayling, Michael C.

2013-09-01

At advanced nodes, CMOS logic is being designed in a highly regular design style because of the resolution limitations of optical lithography equipment. Logic and memory layouts using 1D Gridded Design Rules (GDR) have been demonstrated to nodes beyond 12nm.[1-4] Smaller nodes will require the same regular layout style but with multiple patterning for critical layers. One of the significant advantages of 1D GDR is the ease of splitting layouts into lines and cuts. A lines and cuts approach has been used to achieve good pattern fidelity and process margin to below 12nm.[4] Line scaling with excellent line-edge roughness (LER) has been demonstrated with self-aligned spacer processing.[5] This change in design style has important implications for mask making: • The complexity of the masks will be greatly reduced from what would be required for 2D designs with very complex OPC or inverse lithography corrections. • The number of masks will initially increase, as for conventional multiple patterning. But in the case of 1D design, there are future options for mask count reduction. • The line masks will remain simple, with little or no OPC, at pitches (1x) above 80nm. This provides an excellent opportunity for continual improvement of line CD and LER. The line pattern will be processed through a self-aligned pitch division sequence to divide pitch by 2 or by 4. • The cut masks can be done with "simple OPC" as demonstrated to beyond 12nm.[6] Multiple simple cut masks may be required at advanced nodes. "Coloring" has been demonstrated to below 12nm for two colors and to 8nm for three colors. • Cut/hole masks will eventually be replaced by e-beam direct write using complementary e-beam lithography (CEBL).[7-11] This transition is gated by the availability of multiple column e-beam systems with throughput adequate for high- volume manufacturing. A brief description of 1D and 2D design styles will be presented, followed by examples of 1D layouts. Mask complexity for 1D layouts patterned directly will be compared to mask complexity for lines and cuts at nodes larger than 20nm. No such comparison is possible below 20nm since single-patterning does not work below ~80nm pitch using optical exposure tools. Also discussed will be recently published wafer results for line patterns with pitch division by-2 and by-4 at sub-12nm nodes, plus examples of post-etch results for 1D patterns done with cut masks and compared to cuts exposed by a single-column e-beam direct write system.

Model-based virtual VSB mask writer verification for efficient mask error checking and optimization prior to MDP

NASA Astrophysics Data System (ADS)

Pack, Robert C.; Standiford, Keith; Lukanc, Todd; Ning, Guo Xiang; Verma, Piyush; Batarseh, Fadi; Chua, Gek Soon; Fujimura, Akira; Pang, Linyong

2014-10-01

A methodology is described wherein a calibrated model-based `Virtual' Variable Shaped Beam (VSB) mask writer process simulator is used to accurately verify complex Optical Proximity Correction (OPC) and Inverse Lithography Technology (ILT) mask designs prior to Mask Data Preparation (MDP) and mask fabrication. This type of verification addresses physical effects which occur in mask writing that may impact lithographic printing fidelity and variability. The work described here is motivated by requirements for extreme accuracy and control of variations for today's most demanding IC products. These extreme demands necessitate careful and detailed analysis of all potential sources of uncompensated error or variation and extreme control of these at each stage of the integrated OPC/ MDP/ Mask/ silicon lithography flow. The important potential sources of variation we focus on here originate on the basis of VSB mask writer physics and other errors inherent in the mask writing process. The deposited electron beam dose distribution may be examined in a manner similar to optical lithography aerial image analysis and image edge log-slope analysis. This approach enables one to catch, grade, and mitigate problems early and thus reduce the likelihood for costly long-loop iterations between OPC, MDP, and wafer fabrication flows. It moreover describes how to detect regions of a layout or mask where hotspots may occur or where the robustness to intrinsic variations may be improved by modification to the OPC, choice of mask technology, or by judicious design of VSB shots and dose assignment.

CA resist with high sensitivity and sub-100-nm resolution for advanced mask making

NASA Astrophysics Data System (ADS)

Huang, Wu-Song; Kwong, Ranee W.; Hartley, John G.; Moreau, Wayne M.; Angelopoulos, Marie; Magg, Christopher; Lawliss, Mark

2000-07-01

Recently, there is significant interest in using CA resist for electron beam (E-beam) applications including mask making, direct write, and projection printing. CA resists provide superior lithographic performance in comparison to traditional non-CA E-beam resist in particular high contrast, resolution, and sensitivity. However, most of the commercially available CA resist have the concern of airborne base contaminants and sensitivity to PAB and/or PEB temperatures. In this presentation, we will discuss a new improved ketal resists system referred to as KRS-XE which exhibits excellent lithography, is robust toward airborne base, compatible with 0.263N TMAH aqueous developer and exhibits excellent lithography, is robust toward airborne base, compatible with 0.263N TMAH aqueous developer and exhibits a large PAB/PEB latitude. With the combination of a high performance mask making E-beam exposure tool, high kV shaped beam system EL4+ and the KRS-XE resist, we have printed 75nm lines/space feature with excellent profile control at a dose of 13(mu) C/cm2 at 75kV. The shaped beam vector scan system used here provides a unique property in resolving small features in lithography and throughput. Overhead in EL4+$ limits the systems ability to fully exploit the sensitivity of the new resist for throughput. The EL5 system has sufficiently low overhead that it is projected to print a 4X, 16G DRAM mask with OPC in under 3 hours with the CA resist. We will discuss the throughput advantages of the next generation EL5 system over the existing EL4+.

Separation of submicron bioparticles by dielectrophoresis.

PubMed Central

Morgan, H; Hughes, M P; Green, N G

1999-01-01

Submicron particles such as latex spheres and viruses can be manipulated and characterized using dielectrophoresis. By the use of appropriate microelectrode arrays, particles can be trapped or moved between regions of high or low electric fields. The magnitude and direction of the dielectrophoretic force on the particle depends on its dielectric properties, so that a heterogeneous mixture of particles can be separated to produce a more homogeneous population. In this paper the controlled separation of submicron bioparticles is demonstrated. With electrode arrays fabricated using direct write electron beam lithography, it is shown that different types of submicron latex spheres can be spatially separated. The separation occurs as a result of differences in magnitude and/or direction of the dielectrophoretic force on different populations of particles. These differences arise mainly because the surface properties of submicron particles dominate their dielectrophoretic behavior. It is also demonstrated that tobacco mosaic virus and herpes simplex virus can be manipulated and spatially separated in a microelectrode array. PMID:10388776

One-step fabrication of submicrostructures by low one-photon absorption direct laser writing technique with local thermal effect

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nguyen, Dam Thuy Trang; Tong, Quang Cong; Ledoux-Rak, Isabelle

In this work, local thermal effect induced by a continuous-wave laser has been investigated and exploited to optimize the low one-photon absorption (LOPA) direct laser writing (DLW) technique for fabrication of polymer-based microstructures. It was demonstrated that the temperature of excited SU8 photoresist at the focusing area increases to above 100 °C due to high excitation intensity and becomes stable at that temperature thanks to the use of a continuous-wave laser at 532 nm-wavelength. This optically induced thermal effect immediately completes the crosslinking process at the photopolymerized region, allowing obtain desired structures without using the conventional post-exposure bake (PEB) step, which ismore » usually realized after the exposure. Theoretical calculation of the temperature distribution induced by local optical excitation using finite element method confirmed the experimental results. LOPA-based DLW technique combined with optically induced thermal effect (local PEB) shows great advantages over the traditional PEB, such as simple, short fabrication time, high resolution. In particular, it allowed the overcoming of the accumulation effect inherently existed in optical lithography by one-photon absorption process, resulting in small and uniform structures with very short lattice constant.« less

Extension of optical lithography by mask-litho integration with computational lithography

NASA Astrophysics Data System (ADS)

Takigawa, T.; Gronlund, K.; Wiley, J.

2010-05-01

Wafer lithography process windows can be enlarged by using source mask co-optimization (SMO). Recently, SMO including freeform wafer scanner illumination sources has been developed. Freeform sources are generated by a programmable illumination system using a micro-mirror array or by custom Diffractive Optical Elements (DOE). The combination of freeform sources and complex masks generated by SMO show increased wafer lithography process window and reduced MEEF. Full-chip mask optimization using source optimized by SMO can generate complex masks with small variable feature size sub-resolution assist features (SRAF). These complex masks create challenges for accurate mask pattern writing and low false-defect inspection. The accuracy of the small variable-sized mask SRAF patterns is degraded by short range mask process proximity effects. To address the accuracy needed for these complex masks, we developed a highly accurate mask process correction (MPC) capability. It is also difficult to achieve low false-defect inspections of complex masks with conventional mask defect inspection systems. A printability check system, Mask Lithography Manufacturability Check (M-LMC), is developed and integrated with 199-nm high NA inspection system, NPI. M-LMC successfully identifies printable defects from all of the masses of raw defect images collected during the inspection of a complex mask. Long range mask CD uniformity errors are compensated by scanner dose control. A mask CD uniformity error map obtained by mask metrology system is used as input data to the scanner. Using this method, wafer CD uniformity is improved. As reviewed above, mask-litho integration technology with computational lithography is becoming increasingly important.

Radiopaque Resists for Two-Photon Lithography To Enable Submicron 3D Imaging of Polymer Parts via X-ray Computed Tomography

DOE Office of Scientific and Technical Information (OSTI.GOV)

Saha, Sourabh K.; Oakdale, James S.; Cuadra, Jefferson A.

Two-photon lithography (TPL) is a high-resolution additive manufacturing (AM) technique capable of producing arbitrarily complex three-dimensional (3D) microstructures with features 2–3 orders of magnitude finer than human hair. This process finds numerous applications as a direct route toward the fabrication of novel optical and mechanical metamaterials, miniaturized optics, microfluidics, biological scaffolds, and various other intricate 3D parts. As TPL matures, metrology and inspection become a crucial step in the manufacturing process to ensure that the geometric form of the end product meets design specifications. X-ray-based computed tomography (CT) is a nondestructive technique that can provide this inspection capability for themore » evaluation of complex internal 3D structure. However, polymeric photoresists commonly used for TPL, as well as other forms of stereolithography, poorly attenuate X-rays due to the low atomic number (Z) of their constituent elements and therefore appear relatively transparent during imaging. We present the development of optically clear yet radiopaque photoresists for enhanced contrast under X-ray CT. We have synthesized iodinated acrylate monomers to formulate high-Z photoresist materials that are capable of forming 3D microstructures with sub-150 nm features. In addition, we have developed a formulation protocol to match the refractive index of the photoresists to the immersion medium of the objective lens so as to enable dip-in laser lithography, a direct laser writing technique for producing millimeter-tall structures. Our radiopaque photopolymer then resists increase X-ray attenuation by a factor of more than 10 times without sacrificing the sub-150 nm feature resolution or the millimeter-scale part height. Thus, our resists can successfully replace existing photopolymers to generate AM parts that are suitable for inspection via X-ray CT. By providing the “feedstock” for radiopaque AM parts, our resist formulation is expected to play a critical role in enabling fabrication of functional polymer parts to tight design tolerances.« less

Radiopaque Resists for Two-Photon Lithography To Enable Submicron 3D Imaging of Polymer Parts via X-ray Computed Tomography

DOE PAGES

Saha, Sourabh K.; Oakdale, James S.; Cuadra, Jefferson A.; ...

2017-11-24

Two-photon lithography (TPL) is a high-resolution additive manufacturing (AM) technique capable of producing arbitrarily complex three-dimensional (3D) microstructures with features 2–3 orders of magnitude finer than human hair. This process finds numerous applications as a direct route toward the fabrication of novel optical and mechanical metamaterials, miniaturized optics, microfluidics, biological scaffolds, and various other intricate 3D parts. As TPL matures, metrology and inspection become a crucial step in the manufacturing process to ensure that the geometric form of the end product meets design specifications. X-ray-based computed tomography (CT) is a nondestructive technique that can provide this inspection capability for themore » evaluation of complex internal 3D structure. However, polymeric photoresists commonly used for TPL, as well as other forms of stereolithography, poorly attenuate X-rays due to the low atomic number (Z) of their constituent elements and therefore appear relatively transparent during imaging. We present the development of optically clear yet radiopaque photoresists for enhanced contrast under X-ray CT. We have synthesized iodinated acrylate monomers to formulate high-Z photoresist materials that are capable of forming 3D microstructures with sub-150 nm features. In addition, we have developed a formulation protocol to match the refractive index of the photoresists to the immersion medium of the objective lens so as to enable dip-in laser lithography, a direct laser writing technique for producing millimeter-tall structures. Our radiopaque photopolymer then resists increase X-ray attenuation by a factor of more than 10 times without sacrificing the sub-150 nm feature resolution or the millimeter-scale part height. Thus, our resists can successfully replace existing photopolymers to generate AM parts that are suitable for inspection via X-ray CT. By providing the “feedstock” for radiopaque AM parts, our resist formulation is expected to play a critical role in enabling fabrication of functional polymer parts to tight design tolerances.« less

Detecting Submicron Pattern Defects On Optical Photomasks Using An Enhanced El-3 Electron-Beam Lithography Tool

NASA Astrophysics Data System (ADS)

Simpson, R. A.; Davis, D. E.

1982-09-01

This paper describes techniques to detect submicron pattern defects on optical photomasks with an enhanced direct-write, electron-beam lithographic tool. EL-3 is a third generation, shaped spot, electron-beam lithography tool developed by IBM to fabricate semiconductor devices and masks. This tool is being upgraded to provide 100% inspection of optical photomasks for submicron pattern defects, which are subsequently repaired. Fixed-size overlapped spots are stepped over the mask patterns while a signal derived from the back-scattered electrons is monitored to detect pattern defects. Inspection does not require pattern recognition because the inspection scan patterns are derived from the original design data. The inspection spot is square and larger than the minimum defect to be detected, to improve throughput. A new registration technique provides the beam-to-pattern overlay required to locate submicron defects. The 'guard banding" of inspection shapes prevents mask and system tolerances from producing false alarms that would occur should the spots be mispositioned such that they only partially covered a shape being inspected. A rescanning technique eliminates noise-related false alarms and significantly improves throughput. Data is accumulated during inspection and processed offline, as required for defect repair. EL-3 will detect 0.5 um pattern defects at throughputs compatible with mask manufacturing.

A combined electron beam/optical lithography process step for the fabrication of sub-half-micron-gate-length MMIC chips

NASA Technical Reports Server (NTRS)

Sewell, James S.; Bozada, Christopher A.

1994-01-01

Advanced radar and communication systems rely heavily on state-of-the-art microelectronics. Systems such as the phased-array radar require many transmit/receive (T/R) modules which are made up of many millimeter wave - microwave integrated circuits (MMIC's). The heart of a MMIC chip is the Gallium Arsenide (GaAs) field-effect transistor (FET). The transistor gate length is the critical feature that determines the operating frequency of the radar system. A smaller gate length will typically result in a higher frequency. In order to make a phased array radar system economically feasible, manufacturers must be capable of producing very large quantities of small-gate-length MMIC chips at a relatively low cost per chip. This requires the processing of a large number of wafers with a large number of chips per wafer, minimum processing time, and a very high chip yield. One of the bottlenecks in the fabrication of MIMIC chips is the transistor gate definition. The definition of sub-half-micron gates for GaAs-based field-effect transistors is generally performed by direct-write electron beam lithography (EBL). Because of the throughput limitations of EBL, the gate-layer fabrication is conventionally divided into two lithographic processes where EBL is used to generate the gate fingers and optical lithography is used to generate the large-area gate pads and interconnects. As a result, two complete sequences of resist application, exposure, development, metallization and lift-off are required for the entire gate structure. We have baselined a hybrid process, referred to as EBOL (electron beam/optical lithography), in which a single application of a multi-level resist is used for both exposures. The entire gate structure, (gate fingers, interconnects and pads), is then formed with a single metallization and lift-off process. The EBOL process thus retains the advantages of the high-resolution E-beam lithography and the high throughput of optical lithography while essentially eliminating an entire lithography/metallization/lift-off process sequence. This technique has been proven to be reliable for both trapezoidal and mushroom gates and has been successfully applied to metal-semiconductor and high-electron-mobility field-effect transistor (MESFET and HEMT) wafers containing devices with gate lengths down to 0.10 micron and 75 x 75 micron gate pads. The yields and throughput of these wafers have been very high with no loss in device performance. We will discuss the entire EBOL process technology including the multilayer resist structure, exposure conditions, process sensitivities, metal edge definition, device results, comparison to the standard gate-layer process, and its suitability for manufacturing.

A combined electron beam/optical lithography process step for the fabrication of sub-half-micron-gate-length MMIC chips

NASA Astrophysics Data System (ADS)

Sewell, James S.; Bozada, Christopher A.

1994-02-01

Advanced radar and communication systems rely heavily on state-of-the-art microelectronics. Systems such as the phased-array radar require many transmit/receive (T/R) modules which are made up of many millimeter wave - microwave integrated circuits (MMIC's). The heart of a MMIC chip is the Gallium Arsenide (GaAs) field-effect transistor (FET). The transistor gate length is the critical feature that determines the operating frequency of the radar system. A smaller gate length will typically result in a higher frequency. In order to make a phased array radar system economically feasible, manufacturers must be capable of producing very large quantities of small-gate-length MMIC chips at a relatively low cost per chip. This requires the processing of a large number of wafers with a large number of chips per wafer, minimum processing time, and a very high chip yield. One of the bottlenecks in the fabrication of MIMIC chips is the transistor gate definition. The definition of sub-half-micron gates for GaAs-based field-effect transistors is generally performed by direct-write electron beam lithography (EBL). Because of the throughput limitations of EBL, the gate-layer fabrication is conventionally divided into two lithographic processes where EBL is used to generate the gate fingers and optical lithography is used to generate the large-area gate pads and interconnects. As a result, two complete sequences of resist application, exposure, development, metallization and lift-off are required for the entire gate structure. We have baselined a hybrid process, referred to as EBOL (electron beam/optical lithography), in which a single application of a multi-level resist is used for both exposures. The entire gate structure, (gate fingers, interconnects and pads), is then formed with a single metallization and lift-off process. The EBOL process thus retains the advantages of the high-resolution E-beam lithography and the high throughput of optical lithography while essentially eliminating an entire lithography/metallization/lift-off process sequence. This technique has been proven to be reliable for both trapezoidal and mushroom gates and has been successfully applied to metal-semiconductor and high-electron-mobility field-effect transistor (MESFET and HEMT) wafers containing devices with gate lengths down to 0.10 micron and 75 x 75 micron gate pads. The yields and throughput of these wafers have been very high with no loss in device performance. We will discuss the entire EBOL process technology including the multilayer resist structure, exposure conditions, process sensitivities, metal edge definition, device results, comparison to the standard gate-layer process, and its suitability for manufacturing.

Automated aberration correction of arbitrary laser modes in high numerical aperture systems.

PubMed

Hering, Julian; Waller, Erik H; Von Freymann, Georg

2016-12-12

Controlling the point-spread-function in three-dimensional laser lithography is crucial for fabricating structures with highest definition and resolution. In contrast to microscopy, aberrations have to be physically corrected prior to writing, to create well defined doughnut modes, bottlebeams or multi foci modes. We report on a modified Gerchberg-Saxton algorithm for spatial-light-modulator based automated aberration compensation to optimize arbitrary laser-modes in a high numerical aperture system. Using circularly polarized light for the measurement and first-guess initial conditions for amplitude and phase of the pupil function our scalar approach outperforms recent algorithms with vectorial corrections. Besides laser lithography also applications like optical tweezers and microscopy might benefit from the method presented.

Scanning digital lithography providing high speed large area patterning with diffraction limited sub-micron resolution

NASA Astrophysics Data System (ADS)

Wen, Sy-Bor; Bhaskar, Arun; Zhang, Hongjie

2018-07-01

A scanning digital lithography system using computer controlled digital spatial light modulator, spatial filter, infinity correct optical microscope and high precision translation stage is proposed and examined. Through utilizing the spatial filter to limit orders of diffraction modes for light delivered from the spatial light modulator, we are able to achieve diffraction limited deep submicron spatial resolution with the scanning digital lithography system by using standard one inch level optical components with reasonable prices. Raster scanning of this scanning digital lithography system using a high speed high precision x-y translation stage and piezo mount to real time adjust the focal position of objective lens allows us to achieve large area sub-micron resolved patterning with high speed (compared with e-beam lithography). It is determined in this study that to achieve high quality stitching of lithography patterns with raster scanning, a high-resolution rotation stage will be required to ensure the x and y directions of the projected pattern are in the same x and y translation directions of the nanometer precision x-y translation stage.

Way for LEEPL technology to succeed in memory device application

NASA Astrophysics Data System (ADS)

Kim, In-Sung; Woo, Sang-Gyun; Cho, Han-Ku; Han, Woo-Sung; Moon, Joo-Tae

2004-05-01

Lithography for 65nm-node device is drawing a lot of attentions these days especially because lithography solution for this node is not clear and even tool makers tend to wait for the consensus in lithography roadmap to avoid the risk of erroneous amount of investment. Recently proposed concept of low energy electron-beam proximity-projection lithography (LEEPL)1,2 technology has already released its first production machine in 2003, which is being expected to cover the design rule down to 65nm-node and even smaller3. Although production of semiconductor device has been pursuing optical lithography, without any optical technology that is proved as a convincing solution for 65nm node and below, we need to take account of all the candidates. So we made an investigation on LEEPL technology and evaluated beta and first production tool to see the feasibility of printing sub-70nm resolution and of optic-first mix-and-match overlay from a chip maker"s point of view. Two different kinds of stencil masks were fabricated for the evaluation, which are fabricated in SiC and Si membrane. The former mask is for sparse contact holes(C/H) and the latter for dense C/Hs. Beta-tool showed a good resolving power of sub-70nm sparse C/Hs of SRAM with negligibly small proximity effect. It implies that LEEPL does not require much effort for proximity correction comparing to that required in optical lithography, which is one of the biggest issues in low-k1. LEEPL also showed a good capability of optic-first mix-and-match overlay correction and this is the most stringent and important functionality for optic-first mix-and-match application. However random intra-membrane image placement(IP) error that is a little bit larger than the requirement for sub-70nm node was observed, which is interpreted to come from the larger stress of 100MPa in 3X3mm2 dry-etched SiC unit membrane. For dense C/Hs, we failed, to the contrary, to obtain any good quality of stencil masks for DRAM cell patterns because of e-beam proximity effect which is unavoidable in the reversed order of front-side forward direct writing and back-side later membrane formation. Pros and cons of LEEPL technology are discussed based on the evaluation results and estimation from the memory device standpoint. We also propose a novel concept of stencil mask that can be helpful in memory device application.

Designing to win in sub-90nm mask production

NASA Astrophysics Data System (ADS)

Zhang, Yuan

2005-11-01

An informal survey conducted with key customers by Photronics indicates that the time gap between technology nodes has accelerated in recent years. Previously the cycle was three years. However, between 130nm and 90nm there was less than a 2 year gap, and between 90nm and 65nm a 1.5 year gap exists. As a result, the technical challenges have increased substantially. In addition, mask costs are rising exponentially due to high capital equipment cost, a shrinking customer base, long write times and increased applications of 193nm EAPSM or AAPSM. Collaboration among EDA companies, mask houses and wafer manufacturers is now more important than ever. This paper will explore avenues for reducing mask costs, mainly in the areas of: write-time reduction through design for manufacturing (DFM), and yield improvement through specification relaxation. Our study conducted through layout vertex modeling suggests that a simple design shape such as a square versus a circle or an angled structure helps reduce shot count and write time. Shot count reduction through mask layout optimization, and advancement in new generation E-beam writers can reduce write time up to 65%. An advanced laser writer can produce those less critical E-beam layers in less than half the time of an e-beam writer. Additionally, the emerging imprint lithography brings new life and new challenges to the photomask industry with applications in many fields outside of the semiconductor industry. As immersion lithography is introduced for 45nm device production, polarization and MEEF effects due to the mask will become severe. Larger magnification not only provides benefits on CD control and MEEF, but also extends the life time of current 90nm/65nm tool sets where 45nm mask sets can be produced at a lower cost.

In situ electronic probing of semiconducting nanowires in an electron microscope.

PubMed

Fauske, V T; Erlbeck, M B; Huh, J; Kim, D C; Munshi, A M; Dheeraj, D L; Weman, H; Fimland, B O; Van Helvoort, A T J

2016-05-01

For the development of electronic nanoscale structures, feedback on its electronic properties is crucial, but challenging. Here, we present a comparison of various in situ methods for electronically probing single, p-doped GaAs nanowires inside a scanning electron microscope. The methods used include (i) directly probing individual as-grown nanowires with a sharp nano-manipulator, (ii) contacting dispersed nanowires with two metal contacts and (iii) contacting dispersed nanowires with four metal contacts. For the last two cases, we compare the results obtained using conventional ex situ litho-graphy contacting techniques and by in situ, direct-write electron beam induced deposition of a metal (Pt). The comparison shows that 2-probe measurements gives consistent results also with contacts made by electron beam induced deposition, but that for 4-probe, stray deposition can be a problem for shorter nanowires. This comparative study demonstrates that the preferred in situ method depends on the required throughput and reliability. © 2015 The Authors Journal of Microscopy © 2015 Royal Microscopical Society.

Vacuum-free, maskless patterning of Ni electrodes by laser reductive sintering of NiO nanoparticle ink and its application to transparent conductors.

PubMed

Lee, Daeho; Paeng, Dongwoo; Park, Hee K; Grigoropoulos, Costas P

2014-10-28

We introduce a method for direct patterning of Ni electrodes through selective laser direct writing (LDW) of NiO nanoparticle (NP) ink. High-resolution Ni patterns are generated from NiO NP thin films by a vacuum-free, lithography-free, and solution-processable route. In particular, a continuous wave laser is used for the LDW reductive sintering of the metal oxide under ambient conditions with the aid of reducing agents in the ink solvent. Thin (∼ 40 nm) Ni electrodes of glossy metallic surfaces with smooth morphology and excellent edge definition can be fabricated. By applying this method, we demonstrate a high transmittance (>87%), electrically conducting panel for a touch screen panel application. The resistivity of the Ni electrode is less than an order of magnitude higher compared to that of the bulk Ni. Mechanical bending test, tape-pull test, and ultrasonic bath test confirm the robust adhesion of the electrodes on glass and polymer substrates.

Fabrication of Flexible Microneedle Array Electrodes for Wearable Bio-Signal Recording.

PubMed

Ren, Lei; Xu, Shujia; Gao, Jie; Lin, Zi; Chen, Zhipeng; Liu, Bin; Liang, Liang; Jiang, Lelun

2018-04-13

Laser-direct writing (LDW) and magneto-rheological drawing lithography (MRDL) have been proposed for the fabrication of a flexible microneedle array electrode (MAE) for wearable bio-signal monitoring. Conductive patterns were directly written onto the flexible polyethylene terephthalate (PET) substrate by LDW. The microneedle array was rapidly drawn and formed from the droplets of curable magnetorheological fluid with the assistance of an external magnetic field by MRDL. A flexible MAE can maintain a stable contact interface with curved human skin due to the flexibility of the PET substrate. Compared with Ag/AgCl electrodes and flexible dry electrodes (FDE), the electrode-skin interface impedance of flexible MAE was the minimum even after a 50-cycle bending test. Flexible MAE can record electromyography (EMG), electroencephalography (EEG) and static electrocardiography (ECG) signals with good fidelity. The main features of the dynamic ECG signal recorded by flexible MAE are the most distinguishable with the least moving artifacts. Flexible MAE is an attractive candidate electrode for wearable bio-signal monitoring.

Fabrication of Flexible Microneedle Array Electrodes for Wearable Bio-Signal Recording

PubMed Central

Ren, Lei; Xu, Shujia; Gao, Jie; Lin, Zi; Chen, Zhipeng; Liu, Bin; Liang, Liang; Jiang, Lelun

2018-01-01

Laser-direct writing (LDW) and magneto-rheological drawing lithography (MRDL) have been proposed for the fabrication of a flexible microneedle array electrode (MAE) for wearable bio-signal monitoring. Conductive patterns were directly written onto the flexible polyethylene terephthalate (PET) substrate by LDW. The microneedle array was rapidly drawn and formed from the droplets of curable magnetorheological fluid with the assistance of an external magnetic field by MRDL. A flexible MAE can maintain a stable contact interface with curved human skin due to the flexibility of the PET substrate. Compared with Ag/AgCl electrodes and flexible dry electrodes (FDE), the electrode–skin interface impedance of flexible MAE was the minimum even after a 50-cycle bending test. Flexible MAE can record electromyography (EMG), electroencephalography (EEG) and static electrocardiography (ECG) signals with good fidelity. The main features of the dynamic ECG signal recorded by flexible MAE are the most distinguishable with the least moving artifacts. Flexible MAE is an attractive candidate electrode for wearable bio-signal monitoring. PMID:29652835

First Results From A Multi-Ion Beam Lithography And Processing System At The University Of Florida

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gila, Brent; Appleton, Bill R.; Fridmann, Joel

2011-06-01

The University of Florida (UF) have collaborated with Raith to develop a version of the Raith ionLiNE IBL system that has the capability to deliver multi-ion species in addition to the Ga ions normally available. The UF system is currently equipped with a AuSi liquid metal alloy ion source (LMAIS) and ExB filter making it capable of delivering Au and Si ions and ion clusters for ion beam processing. Other LMAIS systems could be developed in the future to deliver other ion species. This system is capable of high performance ion beam lithography, sputter profiling, maskless ion implantation, ion beammore » mixing, and spatial and temporal ion beam assisted writing and processing over large areas (100 mm2)--all with selected ion species at voltages from 15-40 kV and nanometer precision. We discuss the performance of the system with the AuSi LMAIS source and ExB mass separator. We report on initial results from the basic system characterization, ion beam lithography, as well as for basic ion-solid interactions.« less

Control of the interaction strength of photonic molecules by nanometer precise 3D fabrication.

PubMed

Rawlings, Colin D; Zientek, Michal; Spieser, Martin; Urbonas, Darius; Stöferle, Thilo; Mahrt, Rainer F; Lisunova, Yuliya; Brugger, Juergen; Duerig, Urs; Knoll, Armin W

2017-11-28

Applications for high resolution 3D profiles, so-called grayscale lithography, exist in diverse fields such as optics, nanofluidics and tribology. All of them require the fabrication of patterns with reliable absolute patterning depth independent of the substrate location and target materials. Here we present a complete patterning and pattern-transfer solution based on thermal scanning probe lithography (t-SPL) and dry etching. We demonstrate the fabrication of 3D profiles in silicon and silicon oxide with nanometer scale accuracy of absolute depth levels. An accuracy of less than 1nm standard deviation in t-SPL is achieved by providing an accurate physical model of the writing process to a model-based implementation of a closed-loop lithography process. For transfering the pattern to a target substrate we optimized the etch process and demonstrate linear amplification of grayscale patterns into silicon and silicon oxide with amplification ratios of ∼6 and ∼1, respectively. The performance of the entire process is demonstrated by manufacturing photonic molecules of desired interaction strength. Excellent agreement of fabricated and simulated structures has been achieved.

In-Plane Electrical Connectivity and Near-Field Concentration of Isolated Graphene Resonators Realized by Ion Beams.

PubMed

Luo, Weiwei; Cai, Wei; Xiang, Yinxiao; Wu, Wei; Shi, Bin; Jiang, Xiaojie; Zhang, Ni; Ren, Mengxin; Zhang, Xinzheng; Xu, Jingjun

2017-08-01

Graphene plasmons provide great opportunities in light-matter interactions benefiting from the extreme confinement and electrical tunability. Structured graphene cavities possess enhanced confinements in 3D and steerable plasmon resonances, potential in applications for sensing and emission control at the nanoscale. Besides graphene boundaries obtained by mask lithography, graphene defects engineered by ion beams have shown efficient plasmon reflections. In this paper, near-field responses of structured graphene achieved by ion beam direct-writing are investigated. Graphene nanoresonators are fabricated easily and precisely with a spatial resolution better than 30 nm. Breathing modes are observed in graphene disks. The amorphous carbons around weaken the response of edge modes in the resonators, but meanwhile render the isolated resonators in-plane electrical connections, where near-fields are proved gate-tunable. The realization of gate-tunable near-fields of graphene 2D resonators opens up tunable near-field couplings with matters. Moreover, graphene nonconcentric rings with engineered near-field confinement distributions are demonstrated, where the quadrupole plasmon modes are excited. Near-field mappings reveal concentrations at the scale of 3.8×10-4λ02 within certain zones which can be engineered. The realization of electrically tunable graphene nanoresonators by ion beam direct-writing is promising for active manipulation of emission and sensing at the nanoscale. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

3-dimensional free standing micro-structures by proton beam writing of Su 8-silver nanoParticle polymeric composite

NASA Astrophysics Data System (ADS)

Igbenehi, H.; Jiguet, S.

2012-09-01

Proton beam lithography a maskless direct-write lithographic technique (well suited for producing 3-Dimensional microstructures in a range of resist and semiconductor materials) is demonstrated as an effective tool in the creation of electrically conductive freestanding micro-structures in an Su 8 + Nano Silver polymer composite. The structures produced show non-ohmic conductivity and fit the percolation theory conduction model of tunneling of separated nanoparticles. Measurements show threshold switching and a change in conductivity of at least 4 orders of magnitude. The predictable range of protons in materials at a given energy is exploited in the creation of high aspect ratio, free standing micro-structures, made from a commercially available SU8 Silver nano-composite (GMC3060 form Gersteltec Inc. a negative tone photo-epoxy with added metallic nano-particles(Silver)) to create films with enhanced electrical properties when exposed and cured. Nano-composite films are directly written on with a finely focused MeV accelerated Proton particle beam. The energy loss of the incident proton beams in the target polymer nano- composite film is concentrated at the end of its range, where damage occurs; changing the chemistry of the nano-composite film via an acid initiated polymerization - creating conduction paths. Changing the energy of the incident beams provide exposed regions with different penetration and damage depth - exploited in the demonstrated cantilever microstructure.

Antireflective Paraboloidal Microlens Film for Boosting Power Conversion Efficiency of Solar Cells.

PubMed

Fang, Chaolong; Zheng, Jun; Zhang, Yaoju; Li, Yijie; Liu, Siyuan; Wang, Weiji; Jiang, Tao; Zhao, Xuesong; Li, Zhihong

2018-06-21

Microlens arrays can improve light transmittance in optical devices or enhance the photoelectrical conversion efficiency of photovoltaic devices. Their surface morphology (aspect ratio and packed density) is vital to photon management in solar cells. Here, we report a 100% packed density paraboloidal microlens array (PMLA), with a large aspect ratio, fabricated by direct-write UV laser photolithography coupled with soft imprint lithography. Optical characterization shows that the PMLA structure can remarkably decrease the front-side reflectance of solar cell device. The measured electrical parameters of the solar cell device clearly and consistently demonstrate that the PMLA film can considerably improve the photoelectrical conversion efficiency. In addition, the PMLA film has superhydrophobic properties, verified by measurement of a large water contact angle, and can enhance the self-cleaning capability of solar cell devices.

Diamond field emitter array cathodes and possibilities of employing additive manufacturing for dielectric laser accelerating structures

NASA Astrophysics Data System (ADS)

Simakov, Evgenya I.; Andrews, Heather L.; Herman, Matthew J.; Hubbard, Kevin M.; Weis, Eric

2017-03-01

Demonstration of a stand-alone practical dielectric laser accelerator (DLA) requires innovation in two major critical components: high-current ultra-low-emittance cathodes and efficient laser accelerator structures. LANL develops two technologies that in our opinion are applicable to the novel DLA architectures: diamond field emitter array (DFEA) cathodes and additive manufacturing of photonic band-gap (PBG) structures. This paper discusses the results of testing of DFEA cathodes in the field-emission regime and the possibilities for their operation in the photoemission regime, and compares their emission characteristics to the specific needs of DLAs. We also describe recent advances in additive manufacturing of dielectric woodpile structures using a Nanoscribe direct laser-writing device capable of maskless lithography and additive manufacturing, and the development of novel infrared dielectric materials compatible with additive manufacturing.

Potential of e-beam writing for diffractive optics

NASA Astrophysics Data System (ADS)

Kley, Ernst-Bernhard; Wyrowski, Frank

1997-05-01

E-beam lithography (EBL) is a powerful tool in optics. Optician can use the progress in EBL to fabricate optical components and systems with novel functions. However, EBL is dominated by microelectronics. Therefore the demands of optics are not always met by the exiting EBL technology. Some possibilities as well as limits of EBL in optics are discussed at the example of diffractive optics.

Line edge roughness (LER) mitigation studies specific to interference-like lithography

NASA Astrophysics Data System (ADS)

Baylav, Burak; Estroff, Andrew; Xie, Peng; Smith, Bruce W.

2013-04-01

Line edge roughness (LER) is a common problem to most lithography approaches and is seen as the main resolution limiter for advanced technology nodes1. There are several contributors to LER such as chemical/optical shot noise, random nature of acid diffusion, development process, and concentration of acid generator/base quencher. Since interference-like lithography (IL) is used to define one directional gridded patterns, some LER mitigation approaches specific to IL-like imaging can be explored. Two methods investigated in this work for this goal are (i) translational image averaging along the line direction and (ii) pupil plane filtering. Experiments regarding the former were performed on both interferometric and projection lithography systems. Projection lithography experiments showed a small amount of reduction in low/mid frequency LER value for image averaged cases at pitch of 150 nm (193 nm illumination, 0.93 NA) with less change for smaller pitches. Aerial image smearing did not significantly increase LER since it was directional. Simulation showed less than 1% reduction in NILS (compared to a static, smooth mask equivalent) with ideal alignment. In addition, description of pupil plane filtering on the transfer of mask roughness is given. When astigmatism-like aberrations were introduced in the pupil, transfer of mask roughness is decreased at best focus. It is important to exclude main diffraction orders from the filtering to prevent contrast and NILS loss. These ideas can be valuable as projection lithography approaches to conditions similar to IL (e.g. strong RET methods).

Plastic masters-rigid templates for soft lithography.

PubMed

Desai, Salil P; Freeman, Dennis M; Voldman, Joel

2009-06-07

We demonstrate a simple process for the fabrication of rigid plastic master molds for soft lithography directly from (poly)dimethysiloxane devices. Plastics masters (PMs) provide a cost-effective alternative to silicon-based masters and can be easily replicated without the need for cleanroom facilities. We have successfully demonstrated the use of plastics micromolding to generate both single and dual-layer plastic structures, and have characterized the fidelity of the molding process. Using the PM fabrication technique, world-to-chip connections can be integrated directly into the master enabling devices with robust, well-aligned fluidic ports directly after molding. PMs provide an easy technique for the fabrication of microfluidic devices and a simple route for the scaling-up of fabrication of robust masters for soft lithography.

Rapid prototyping of Fresnel zone plates via direct Ga(+) ion beam lithography for high-resolution X-ray imaging.

PubMed

Keskinbora, Kahraman; Grévent, Corinne; Eigenthaler, Ulrike; Weigand, Markus; Schütz, Gisela

2013-11-26

A significant challenge to the wide utilization of X-ray microscopy lies in the difficulty in fabricating adequate high-resolution optics. To date, electron beam lithography has been the dominant technique for the fabrication of diffractive focusing optics called Fresnel zone plates (FZP), even though this preparation method is usually very complicated and is composed of many fabrication steps. In this work, we demonstrate an alternative method that allows the direct, simple, and fast fabrication of FZPs using focused Ga(+) beam lithography practically, in a single step. This method enabled us to prepare a high-resolution FZP in less than 13 min. The performance of the FZP was evaluated in a scanning transmission soft X-ray microscope where nanostructures as small as sub-29 nm in width were clearly resolved, with an ultimate cutoff resolution of 24.25 nm, demonstrating the highest first-order resolution for any FZP fabricated by the ion beam lithography technique. This rapid and simple fabrication scheme illustrates the capabilities and the potential of direct ion beam lithography (IBL) and is expected to increase the accessibility of high-resolution optics to a wider community of researchers working on soft X-ray and extreme ultraviolet microscopy using synchrotron radiation and advanced laboratory sources.

Lithography alternatives meet design style reality: How do they "line" up?

NASA Astrophysics Data System (ADS)

Smayling, Michael C.

2016-03-01

Optical lithography resolution scaling has stalled, giving innovative alternatives a window of opportunity. One important factor that impacts these lithographic approaches is the transition in design style from 2D to 1D for advanced CMOS logic. Just as the transition from 3D circuits to 2D fabrication 50 years ago created an opportunity for a new breed of electronics companies, the transition today presents exciting and challenging time for lithographers. Today, we are looking at a range of non-optical lithography processes. Those considered here can be broadly categorized: self-aligned lithography, self-assembled lithography, deposition lithography, nano-imprint lithography, pixelated e-beam lithography, shot-based e-beam lithography .Do any of these alternatives benefit from or take advantage of 1D layout? Yes, for example SAPD + CL (Self Aligned Pitch Division combined with Complementary Lithography). This is a widely adopted process for CMOS nodes at 22nm and below. Can there be additional design / process co-optimization? In spite of the simple-looking nature of 1D layout, the placement of "cut" in the lines and "holes" for interlayer connections can be tuned for a given process capability. Examples of such optimization have been presented at this conference, typically showing a reduction of at least one in the number of cut or hole patterns needed.[1,2] Can any of the alternatives complement each other or optical lithography? Yes.[3] For example, DSA (Directed Self Assembly) combines optical lithography with self-assembly. CEBL (Complementary e-Beam Lithography) combines optical lithography with SAPD for lines with shot-based e-beam lithography for cuts and holes. Does one (shrinking) size fit all? No, that's why we have many alternatives. For example NIL (Nano-imprint Lithography) has been introduced for NAND Flash patterning where the (trending lower) defectivity is acceptable for the product. Deposition lithography has been introduced in 3D NAND Flash to set the channel length of select and memory transistors.

Development of economic MeV-ion microbeam technology at Chiang Mai University

NASA Astrophysics Data System (ADS)

Singkarat, S.; Puttaraksa, N.; Unai, S.; Yu, L. D.; Singkarat, K.; Pussadee, N.; Whitlow, H. J.; Natyanum, S.; Tippawan, U.

2017-08-01

Developing high technologies but in economic manners is necessary and also feasible for developing countries. At Chiang Mai University, Thailand, we have developed MeV-ion microbeam technology based on a 1.7-MV Tandetron tandem accelerator with our limited resources in a cost-effective manner. Instead of using expensive and technically complex electrostatic or magnetic quadrupole focusing lens systems, we have developed cheap MeV-ion microbeams using programmed L-shaped blade aperture and capillary techniques for MeV ion beam lithography or writing and mapping. The programmed L-shaped blade micro-aperture system consists of a pair of L-shaped movable aperture pieces which are controlled by computer to cut off the ion beam for controlling the beam size down to the micrometer order. The capillary technique utilizes our home-fabricated tapered glass capillaries to realize microbeams. Either system can be installed inside the endstation of the MeV ion beam line of the accelerator. Both systems have been applied to MeV-ion beam lithography or writing of micro-patterns for microfluidics applications to fabricate lab-on-chip devices. The capillary technique is being developed for MeV-ion beam mapping of biological samples. The paper reports details of the techniques and introduces some applications.

First 65nm tape-out using inverse lithography technology (ILT)

NASA Astrophysics Data System (ADS)

Hung, Chi-Yuan; Zhang, Bin; Tang, Deming; Guo, Eric; Pang, Linyong; Liu, Yong; Moore, Andrew; Wang, Kechang

2005-11-01

This paper presents SMIC's first 65nm tape out results, in particularly, using ILT. ILT mathematically determines the mask features that produce the desired on-wafer results with best wafer pattern fidelity, largest process window or both. SMIC applied it to its first 65nm tape-out to study ILT performance and benefits for deep sub-wavelength lithography. SMIC selected 3 SRAM designs as the first test case, because SRAM bit-cells contain features which are challenging lithographically. Mask patterns generated from both conventional OPC and ILT were placed on the mask side-by-side. Mask manufacturability (including fracturing, writing time, inspection, and metrology) and wafer print performance of ILT were studied. The results demonstrated that ILT achieved better CD accuracy, produced substantially larger process window than conventional OPC, and met SMIC's 65nm process window requirements.

Interconnections in ULSI: Correlation and Crosstalk

DTIC Science & Technology

1992-12-31

basic tool is electron beam lithography of poly (methyl methacrylate) (PMMA). The two central issues to creating very dense patterns as described...direct lithographic techniques. Fig. 2: Ti/Au (2 nm/15 nm) grating with 38 nm pitch fabricated by electron beam lithography using our high contrast...G. H. Bernstein, G. Bazan, and D. A. Hill, "Spatial Density of Lines in PMMA by Electron Beam Lithography ," Journal of Vacuum Science and Technology

Progress on complementary patterning using plasmon-excited electron beamlets (Conference Presentation)

NASA Astrophysics Data System (ADS)

Du, Zhidong; Chen, Chen; Pan, Liang

2017-04-01

Maskless lithography using parallel electron beamlets is a promising solution for next generation scalable maskless nanolithography. Researchers have focused on this goal but have been unable to find a robust technology to generate and control high-quality electron beamlets with satisfactory brightness and uniformity. In this work, we will aim to address this challenge by developing a revolutionary surface-plasmon-enhanced-photoemission (SPEP) technology to generate massively-parallel electron beamlets for maskless nanolithography. The new technology is built upon our recent breakthroughs in plasmonic lenses, which will be used to excite and focus surface plasmons to generate massively-parallel electron beamlets through photoemission. Specifically, the proposed SPEP device consists of an array of plasmonic lens and electrostatic micro-lens pairs, each pair independently producing an electron beamlet. During lithography, a spatial optical modulator will dynamically project light onto individual plasmonic lenses to control the switching and brightness of electron beamlets. The photons incident onto each plasmonic lens are concentrated into a diffraction-unlimited spot as localized surface plasmons to excite the local electrons to near their vacuum levels. Meanwhile, the electrostatic micro-lens extracts the excited electrons to form a focused beamlet, which can be rastered across a wafer to perform lithography. Studies showed that surface plasmons can enhance the photoemission by orders of magnitudes. This SPEP technology can scale up the maskless lithography process to write at wafers per hour. In this talk, we will report the mechanism of the strong electron-photon couplings and the locally enhanced photoexcitation, design of a SPEP device, overview of our proof-of-concept study, and demonstrated parallel lithography of 20-50 nm features.

Implementation of assist features in EUV lithography

NASA Astrophysics Data System (ADS)

Jiang, Fan; Burkhardt, Martin; Raghunathan, Ananthan; Torres, Andres; Gupta, Rachit; Word, James

2015-03-01

The introduction of EUV lithography will happen at a critical feature pitch which corresponds to a k1 factor of roughly 0.45. While this number seems not very aggressive compared to recent ArF lithography nodes, the number is sufficiently low that the introduction of assist features has to be considered. While the small NA makes the k1 factor larger, the depth of focus still needs to be scaled down with wavelength. However the exposure tool's focus control is not greatly improved over the ArF tools, so other solutions to improve the depth of focus, e.g. SRAFs, are needed. On the other hand, sub-resolution assist features (SRAFs) require very small mask dimensions, which make masks more costly to write and inspect. Another disadvantage of SRAFs is the fact that they may cause pattern-dependent best focus shift due to thick mask effects. Those effects can be predicted, but the shift of best focus and the associated tilt of Bossung curves make the process more difficult to control. We investigate the impact of SRAFs on printing in EUV lithography and evaluate advantages and disadvantages. By using image quality parameters such as best focus (BF), and depth of focus (DOF), respectively with and without SRAFs, we will answer the question if we can gain a net benefit for 1D and 2D patterns by adding SRAFs. SRAFs will only be introduced if any net improvement in process variation (PV) outweighs the additional expense of assist patterning on the mask. In this paper, we investigate the difference in printing behavior of symmetric and asymmetric SRAF placement and whether through slit effect needs to be considered in SRAF placement for EUV lithography.

Concurrent design of quasi-random photonic nanostructures

PubMed Central

Lee, Won-Kyu; Yu, Shuangcheng; Engel, Clifford J.; Reese, Thaddeus; Rhee, Dongjoon; Chen, Wei

2017-01-01

Nanostructured surfaces with quasi-random geometries can manipulate light over broadband wavelengths and wide ranges of angles. Optimization and realization of stochastic patterns have typically relied on serial, direct-write fabrication methods combined with real-space design. However, this approach is not suitable for customizable features or scalable nanomanufacturing. Moreover, trial-and-error processing cannot guarantee fabrication feasibility because processing–structure relations are not included in conventional designs. Here, we report wrinkle lithography integrated with concurrent design to produce quasi-random nanostructures in amorphous silicon at wafer scales that achieved over 160% light absorption enhancement from 800 to 1,200 nm. The quasi-periodicity of patterns, materials filling ratio, and feature depths could be independently controlled. We statistically represented the quasi-random patterns by Fourier spectral density functions (SDFs) that could bridge the processing–structure and structure–performance relations. Iterative search of the optimal structure via the SDF representation enabled concurrent design of nanostructures and processing. PMID:28760975

Direct laser writing of micro-supercapacitors on hydrated graphite oxide films.

PubMed

Gao, Wei; Singh, Neelam; Song, Li; Liu, Zheng; Reddy, Arava Leela Mohana; Ci, Lijie; Vajtai, Robert; Zhang, Qing; Wei, Bingqing; Ajayan, Pulickel M

2011-07-31

Microscale supercapacitors provide an important complement to batteries in a variety of applications, including portable electronics. Although they can be manufactured using a number of printing and lithography techniques, continued improvements in cost, scalability and form factor are required to realize their full potential. Here, we demonstrate the scalable fabrication of a new type of all-carbon, monolithic supercapacitor by laser reduction and patterning of graphite oxide films. We pattern both in-plane and conventional electrodes consisting of reduced graphite oxide with micrometre resolution, between which graphite oxide serves as a solid electrolyte. The substantial amounts of trapped water in the graphite oxide makes it simultaneously a good ionic conductor and an electrical insulator, allowing it to serve as both an electrolyte and an electrode separator with ion transport characteristics similar to that observed for Nafion membranes. The resulting micro-supercapacitor devices show good cyclic stability, and energy storage capacities comparable to existing thin-film supercapacitors.

Direct laser writing of micro-supercapacitors on hydrated graphite oxide films

NASA Astrophysics Data System (ADS)

Gao, Wei; Singh, Neelam; Song, Li; Liu, Zheng; Reddy, Arava Leela Mohana; Ci, Lijie; Vajtai, Robert; Zhang, Qing; Wei, Bingqing; Ajayan, Pulickel M.

2011-08-01

Microscale supercapacitors provide an important complement to batteries in a variety of applications, including portable electronics. Although they can be manufactured using a number of printing and lithography techniques, continued improvements in cost, scalability and form factor are required to realize their full potential. Here, we demonstrate the scalable fabrication of a new type of all-carbon, monolithic supercapacitor by laser reduction and patterning of graphite oxide films. We pattern both in-plane and conventional electrodes consisting of reduced graphite oxide with micrometre resolution, between which graphite oxide serves as a solid electrolyte. The substantial amounts of trapped water in the graphite oxide makes it simultaneously a good ionic conductor and an electrical insulator, allowing it to serve as both an electrolyte and an electrode separator with ion transport characteristics similar to that observed for Nafion membranes. The resulting micro-supercapacitor devices show good cyclic stability, and energy storage capacities comparable to existing thin-film supercapacitors.

International Conference on Integrated Optical Circuit Engineering, 1st, Cambridge, MA, October 23-25, 1984, Proceedings

NASA Astrophysics Data System (ADS)

Ostrowsky, D. B.; Sriram, S.

Aspects of waveguide technology are explored, taking into account waveguide fabrication techniques in GaAs/GaAlAs, the design and fabrication of AlGaAs/GaAs phase couplers for optical integrated circuit applications, ion implanted GaAs integrated optics fabrication technology, a direct writing electron beam lithography based process for the realization of optoelectronic integrated circuits, and advances in the development of semiconductor integrated optical circuits for telecommunications. Other subjects examined are related to optical signal processing, optical switching, and questions of optical bistability and logic. Attention is given to acousto-optic techniques in integrated optics, acousto-optic Bragg diffraction in proton exchanged waveguides, optical threshold logic architectures for hybrid binary/residue processors, integrated optical modulation and switching, all-optic logic devices for waveguide optics, optoelectronic switching, high-speed photodetector switching, and a mechanical optical switch.

Nano-lithographically fabricated titanium dioxide based visible frequency three dimensional gap photonic crystal.

PubMed

Subramania, Ganapathi; Lee, Yun-Ju; Brener, Igal; Luk, Ting-Shan; Clem, Paul G

2007-10-01

Photonic crystals (PC) have emerged as important types of structures for light manipulation. Ultimate control of light is possible by creating PCs with a complete three dimensional (3D) gap [1, 2]. This has proven to be a considerable challenge in the visible and ultraviolet frequencies mainly due to complications in integrating transparent, high refractive index (n) materials with fabrication techniques to create ~ 100nm features with long range translational order. In this letter, we demonstrate a nano-lithography approach based on a multilevel electron beam direct write and physical vapor deposition, to fabricate four-layer titania woodpile PCs that potentially exhibit complete 3D gap at visible wavelengths. We achieved a short wavelength bandedge of 525nm with a 300nm lattice constant PC. Due to the nanoscale precision and capability for defect control, the nanolithography approach represents an important step toward novel visible photonic devices for lighting, lasers, sensing and biophotonics.

Study of Different Sol-Gel Coatings to Enhance the Lifetime of PDMS Devices: Evaluation of Their Biocompatibility.

PubMed

Aymerich, María; Gómez-Varela, Ana I; Álvarez, Ezequiel; Flores-Arias, María T

2016-08-25

A study of PDMS (polydimethylsiloxane) sol-gel-coated channels fabricated using soft lithography and a laser direct writing technique is presented. PDMS is a biocompatible material that presents a high versatility to reproduce several structures. It is widely employed in the fabrication of preclinical devices due to its advantages but it presents a rapid chemical deterioration to organic solvents. The use of sol-gel layers to cover the PDMS overcomes this problem since it provides the robustness of glass for the structures made with PDMS, decreasing its deterioration and changing the biocompatibility of the surface. In this work, PDMS channels are coated with three different kinds of sol-gel compositions (60MTES/40TEOS, 70MTES/30TISP and 80MTES/20TISP). The endothelial cell adhesion to the different coated devices is evaluated in order to determine the most suitable sol-gel preparation conditions to enhance cellular adhesion.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xu, Jia; Zhang, Ziang; Weng, Zhankun

This paper presents a new method for the generation of cross-scale laser interference patterns and the fabrication of moth-eye structures on silicon. In the method, moth-eye structures were produced on a surface of silicon wafer using direct six-beam laser interference lithography to improve the antireflection performance of the material surface. The periodic dot arrays of the moth-eye structures were formed due to the ablation of the irradiance distribution of interference patterns on the wafer surface. The shape, size, and distribution of the moth-eye structures can be adjusted by controlling the wavelength, incidence angles, and exposure doses in a direct six-beammore » laser interference lithography setup. The theoretical and experimental results have shown that direct six-beam laser interference lithography can provide a way to fabricate cross-scale moth-eye structures for antireflection applications.« less

Overlay improvement by exposure map based mask registration optimization

NASA Astrophysics Data System (ADS)

Shi, Irene; Guo, Eric; Chen, Ming; Lu, Max; Li, Gordon; Li, Rivan; Tian, Eric

2015-03-01

Along with the increased miniaturization of semiconductor electronic devices, the design rules of advanced semiconductor devices shrink dramatically. [1] One of the main challenges of lithography step is the layer-to-layer overlay control. Furthermore, DPT (Double Patterning Technology) has been adapted for the advanced technology node like 28nm and 14nm, corresponding overlay budget becomes even tighter. [2][3] After the in-die mask registration (pattern placement) measurement is introduced, with the model analysis of a KLA SOV (sources of variation) tool, it's observed that registration difference between masks is a significant error source of wafer layer-to-layer overlay at 28nm process. [4][5] Mask registration optimization would highly improve wafer overlay performance accordingly. It was reported that a laser based registration control (RegC) process could be applied after the pattern generation or after pellicle mounting and allowed fine tuning of the mask registration. [6] In this paper we propose a novel method of mask registration correction, which can be applied before mask writing based on mask exposure map, considering the factors of mask chip layout, writing sequence, and pattern density distribution. Our experiment data show if pattern density on the mask keeps at a low level, in-die mask registration residue error in 3sigma could be always under 5nm whatever blank type and related writer POSCOR (position correction) file was applied; it proves random error induced by material or equipment would occupy relatively fixed error budget as an error source of mask registration. On the real production, comparing the mask registration difference through critical production layers, it could be revealed that registration residue error of line space layers with higher pattern density is always much larger than the one of contact hole layers with lower pattern density. Additionally, the mask registration difference between layers with similar pattern density could also achieve under 5nm performance. We assume mask registration excluding random error is mostly induced by charge accumulation during mask writing, which may be calculated from surrounding exposed pattern density. Multi-loading test mask registration result shows that with x direction writing sequence, mask registration behavior in x direction is mainly related to sequence direction, but mask registration in y direction would be highly impacted by pattern density distribution map. It proves part of mask registration error is due to charge issue from nearby environment. If exposure sequence is chip by chip for normal multi chip layout case, mask registration of both x and y direction would be impacted analogously, which has also been proved by real data. Therefore, we try to set up a simple model to predict the mask registration error based on mask exposure map, and correct it with the given POSCOR (position correction) file for advanced mask writing if needed.

Entanglement-seeded, dual, optical parametric amplification: Applications to quantum imaging and metrology

NASA Astrophysics Data System (ADS)

Glasser, Ryan T.; Cable, Hugo; Dowling, Jonathan P.; de Martini, Francesco; Sciarrino, Fabio; Vitelli, Chiara

2008-07-01

The study of optical parametric amplifiers (OPAs) has been successful in describing and creating nonclassical light for use in fields such as quantum metrology and quantum lithography [Agarwal , J. Opt. Soc. Am. B 24, 2 (2007)]. In this paper we present the theory of an OPA scheme utilizing an entangled state input. The scheme involves two identical OPAs seeded with the maximally path-entangled ∣N00N⟩ state (∣2,0⟩+∣0,2⟩)/2 . The stimulated amplification results in output state probability amplitudes that have a dependence on the number of photons in each mode, which differs greatly from two-mode squeezed vacuum. A large family of entangled output states are found. Specific output states allow for the heralded creation of N=4 N00N states, which may be used for quantum lithography, to write sub-Rayleigh fringe patterns, and for quantum interferometry, to achieve Heisenberg-limited phase measurement sensitivity.

Electric field controlled strain induced reversible switching of magnetization in Galfenol nanomagnets delineated on PMN-PT substrate

NASA Astrophysics Data System (ADS)

Ahmad, Hasnain; Atulasimha, Jayasimha; Bandyopadhyay, Supriyo

We report a non-volatile converse magneto-electric effect in elliptical Galfenol (FeGa) nanomagnets of ~300 nm lateral dimensions and ~10nm thickness delineated on a PMN-PT substrate. This effect can be harnessed for energy-efficient non-volatile memory. The nanomagnets are fabricated with e-beam lithography and sputtering. Their major axes are aligned parallel to the direction in which the substrate is poled and they are magnetized in this direction with a magnetic field. An electric field in the opposite direction generates compressive strain in the piezoelectric substrate which is partially transferred to the nanomagnets and rotates their magnetization away from the major axes to metastable orientations. There they remain after the field is removed, resulting in non-volatility. Reversing the electric field generates tensile strain which returns the magnetization to the original state. The two states can encode two binary bits which can be written using the correct voltage polarity, resulting in non-toggle behavior. Scaled memory fashioned on this effect can exhibit write energy dissipation of only ~2 aJ. Work is supported by NSF under ECCS-1124714 and CCF-1216614. Sputtering was carried out at NIST Gaithersburg.

Polymeric lithography editor: Editing lithographic errors with nanoporous polymeric probes

PubMed Central

Rajasekaran, Pradeep Ramiah; Zhou, Chuanhong; Dasari, Mallika; Voss, Kay-Obbe; Trautmann, Christina; Kohli, Punit

2017-01-01

A new lithographic editing system with an ability to erase and rectify errors in microscale with real-time optical feedback is demonstrated. The erasing probe is a conically shaped hydrogel (tip size, ca. 500 nm) template-synthesized from track-etched conical glass wafers. The “nanosponge” hydrogel probe “erases” patterns by hydrating and absorbing molecules into a porous hydrogel matrix via diffusion analogous to a wet sponge. The presence of an interfacial liquid water layer between the hydrogel tip and the substrate during erasing enables frictionless, uninterrupted translation of the eraser on the substrate. The erasing capacity of the hydrogel is extremely high because of the large free volume of the hydrogel matrix. The fast frictionless translocation and interfacial hydration resulted in an extremely high erasing rate (~785 μm2/s), which is two to three orders of magnitude higher in comparison with the atomic force microscopy–based erasing (~0.1 μm2/s) experiments. The high precision and accuracy of the polymeric lithography editor (PLE) system stemmed from coupling piezoelectric actuators to an inverted optical microscope. Subsequently after erasing the patterns using agarose erasers, a polydimethylsiloxane probe fabricated from the same conical track-etched template was used to precisely redeposit molecules of interest at the erased spots. PLE also provides a continuous optical feedback throughout the entire molecular editing process—writing, erasing, and rewriting. To demonstrate its potential in device fabrication, we used PLE to electrochemically erase metallic copper thin film, forming an interdigitated array of microelectrodes for the fabrication of a functional microphotodetector device. High-throughput dot and line erasing, writing with the conical “wet nanosponge,” and continuous optical feedback make PLE complementary to the existing catalog of nanolithographic/microlithographic and three-dimensional printing techniques. This new PLE technique will potentially open up many new and exciting avenues in lithography, which remain unexplored due to the inherent limitations in error rectification capabilities of the existing lithographic techniques. PMID:28630898

Immersion lithography defectivity analysis at DUV inspection wavelength

NASA Astrophysics Data System (ADS)

Golan, E.; Meshulach, D.; Raccah, N.; Yeo, J. Ho.; Dassa, O.; Brandl, S.; Schwarz, C.; Pierson, B.; Montgomery, W.

2007-03-01

Significant effort has been directed in recent years towards the realization of immersion lithography at 193nm wavelength. Immersion lithography is likely a key enabling technology for the production of critical layers for 45nm and 32nm design rule (DR) devices. In spite of the significant progress in immersion lithography technology, there remain several key technology issues, with a critical issue of immersion lithography process induced defects. The benefits of the optical resolution and depth of focus, made possible by immersion lithography, are well understood. Yet, these benefits cannot come at the expense of increased defect counts and decreased production yield. Understanding the impact of the immersion lithography process parameters on wafer defects formation and defect counts, together with the ability to monitor, control and minimize the defect counts down to acceptable levels is imperative for successful introduction of immersion lithography for production of advanced DR's. In this report, we present experimental results of immersion lithography defectivity analysis focused on topcoat layer thickness parameters and resist bake temperatures. Wafers were exposed on the 1150i-α-immersion scanner and 1200B Scanner (ASML), defect inspection was performed using a DUV inspection tool (UVision TM, Applied Materials). Higher sensitivity was demonstrated at DUV through detection of small defects not detected at the visible wavelength, indicating on the potential high sensitivity benefits of DUV inspection for this layer. The analysis indicates that certain types of defects are associated with different immersion process parameters. This type of analysis at DUV wavelengths would enable the optimization of immersion lithography processes, thus enabling the qualification of immersion processes for volume production.

Electron beam throughput from raster to imaging

NASA Astrophysics Data System (ADS)

Zywno, Marek

2016-12-01

Two architectures of electron beam tools are presented: single beam MEBES Exara designed and built by Etec Systems for mask writing, and the Reflected E-Beam Lithography tool (REBL), designed and built by KLA-Tencor under a DARPA Agreement No. HR0011-07-9-0007. Both tools have implemented technologies not used before to achieve their goals. The MEBES X, renamed Exara for marketing purposes, used an air bearing stage running in vacuum to achieve smooth continuous scanning. The REBL used 2 dimensional imaging to distribute charge to a 4k pixel swath to achieve writing times on the order of 1 wafer per hour, scalable to throughput approaching optical projection tools. Three stage architectures were designed for continuous scanning of wafers: linear maglev, rotary maglev, and dual linear maglev.

Multiscale 3D manufacturing: combining thermal extrusion printing with additive and subtractive direct laser writing

NASA Astrophysics Data System (ADS)

Malinauskas, Mangirdas; Lukoševičius, Laurynas; MackevičiÅ«tÄ--, DovilÄ--; BalčiÅ«nas, Evaldas; RekštytÄ--, Sima; Paipulas, Domas

2014-05-01

A novel approach for efficient manufacturing of three-dimensional (3D) microstructured scaffolds designed for cell studies and tissue engineering applications is presented. A thermal extrusion (fused filament fabrication) 3D printer is employed as a simple and low-cost tabletop device enabling rapid materialization of CAD models out of biocompatible and biodegradable polylactic acid (PLA). Here it was used to produce cm- scale microporous (pore size varying from 100 to 400 µm) scaffolds. The fabricated objects were further laser processed in a direct laser writing (DLW) subtractive (ablation) and additive (lithography) manners. The first approach enables precise surface modification by creating micro-craters, holes and grooves thus increasing the surface roughness. An alternative way is to immerse the 3D PLA scaffold in a monomer solution and use the same DLW setup to refine its inner structure by fabricating dots, lines or a fine mesh on top as well as inside the pores of previously produced scaffolds. The DLW technique is empowered by ultrafast lasers - it allows 3D structuring with high spatial resolution in a great variety of photosensitive materials. Structure geometry on macro- to micro- scales could be finely tuned by combining these two fabrication techniques. Such artificial 3D substrates could be used for cell growth or as biocompatible-biodegradable implants. This combination of distinct material processing techniques enables rapid fabrication of diverse functional micro- featured and integrated devices. Hopefully, the proposed approach will find numerous applications in the field of ms, microfluidics, microoptics and many others.

Evaluation of photomask flatness compensation for extreme ultraviolet lithography

NASA Astrophysics Data System (ADS)

Ballman, Katherine; Lee, Christopher; Zimmerman, John; Dunn, Thomas; Bean, Alexander

2016-10-01

As the semiconductor industry continues to strive towards high volume manufacturing for EUV, flatness specifications for photomasks have decreased to below 10nm for 2018 production, however the current champion masks being produced report P-V flatness values of roughly 50nm. Write compensation presents the promising opportunity to mitigate pattern placement errors through the use of geometrically adjusted target patterns which counteract the reticle's flatness induced distortions and address the differences in chucking mechanisms between e-beam write and electrostatic clamping during scan. Compensation relies on high accuracy flatness data which provides the critical topographical components of the reticle to the write tool. Any errors included in the flatness data file are translated to the pattern during the write process, which has now driven flatness measurement tools to target a 6σ reproducibility <1nm. Using data collected from a 2011 Sematech study on the Alpha Demo Tool, the proposed methodology for write compensation is validated against printed wafer results. Topographic features which lack compensation capability must then be held to stringent specifications in order to limit their contributions to the final image placement error (IPE) at wafer. By understanding the capabilities and limitations of write compensation, it is then possible to shift flatness requirements towards the "non-correctable" portion of the reticle's profile, potentially relieving polishers from having to adhere to the current single digit flatness specifications.

Study of Different Sol-Gel Coatings to Enhance the Lifetime of PDMS Devices: Evaluation of Their Biocompatibility

PubMed Central

Aymerich, María; Gómez-Varela, Ana I.; Álvarez, Ezequiel; Flores-Arias, María T.

2016-01-01

A study of PDMS (polydimethylsiloxane) sol-gel–coated channels fabricated using soft lithography and a laser direct writing technique is presented. PDMS is a biocompatible material that presents a high versatility to reproduce several structures. It is widely employed in the fabrication of preclinical devices due to its advantages but it presents a rapid chemical deterioration to organic solvents. The use of sol-gel layers to cover the PDMS overcomes this problem since it provides the robustness of glass for the structures made with PDMS, decreasing its deterioration and changing the biocompatibility of the surface. In this work, PDMS channels are coated with three different kinds of sol-gel compositions (60MTES/40TEOS, 70MTES/30TISP and 80MTES/20TISP). The endothelial cell adhesion to the different coated devices is evaluated in order to determine the most suitable sol-gel preparation conditions to enhance cellular adhesion. PMID:28773848

Wavelength-scale light concentrator made by direct 3D laser writing of polymer metamaterials.

PubMed

Moughames, J; Jradi, S; Chan, T M; Akil, S; Battie, Y; Naciri, A En; Herro, Z; Guenneau, S; Enoch, S; Joly, L; Cousin, J; Bruyant, A

2016-10-04

We report on the realization of functional infrared light concentrators based on a thick layer of air-polymer metamaterial with controlled pore size gradients. The design features an optimum gradient index profile leading to light focusing in the Fresnel zone of the structures for two selected operating wavelength domains near 5.6 and 10.4 μm. The metamaterial which consists in a thick polymer containing air holes with diameters ranging from λ/20 to λ/8 is made using a 3D lithography technique based on the two-photon polymerization of a homemade photopolymer. Infrared imaging of the structures reveals a tight focusing for both structures with a maximum local intensity increase by a factor of 2.5 for a concentrator volume of 1.5 λ 3 , slightly limited by the residual absorption of the selected polymer. Such porous and flat metamaterial structures offer interesting perspectives to increase infrared detector performance at the pixel level for imaging or sensing applications.

Wavelength-scale light concentrator made by direct 3D laser writing of polymer metamaterials

PubMed Central

Moughames, J.; Jradi, S.; Chan, T. M.; Akil, S.; Battie, Y.; Naciri, A. En; Herro, Z.; Guenneau, S.; Enoch, S.; Joly, L.; Cousin, J.; Bruyant, A.

2016-01-01

We report on the realization of functional infrared light concentrators based on a thick layer of air-polymer metamaterial with controlled pore size gradients. The design features an optimum gradient index profile leading to light focusing in the Fresnel zone of the structures for two selected operating wavelength domains near 5.6 and 10.4 μm. The metamaterial which consists in a thick polymer containing air holes with diameters ranging from λ/20 to λ/8 is made using a 3D lithography technique based on the two-photon polymerization of a homemade photopolymer. Infrared imaging of the structures reveals a tight focusing for both structures with a maximum local intensity increase by a factor of 2.5 for a concentrator volume of 1.5 λ3, slightly limited by the residual absorption of the selected polymer. Such porous and flat metamaterial structures offer interesting perspectives to increase infrared detector performance at the pixel level for imaging or sensing applications. PMID:27698476

Single Quantum Dot with Microlens and 3D-Printed Micro-objective as Integrated Bright Single-Photon Source

PubMed Central

2017-01-01

Integrated single-photon sources with high photon-extraction efficiency are key building blocks for applications in the field of quantum communications. We report on a bright single-photon source realized by on-chip integration of a deterministic quantum dot microlens with a 3D-printed multilens micro-objective. The device concept benefits from a sophisticated combination of in situ 3D electron-beam lithography to realize the quantum dot microlens and 3D femtosecond direct laser writing for creation of the micro-objective. In this way, we obtain a high-quality quantum device with broadband photon-extraction efficiency of (40 ± 4)% and high suppression of multiphoton emission events with g(2)(τ = 0) < 0.02. Our results highlight the opportunities that arise from tailoring the optical properties of quantum emitters using integrated optics with high potential for the further development of plug-and-play fiber-coupled single-photon sources. PMID:28670600

The effects of DRIE operational parameters on vertically aligned micropillar arrays

NASA Astrophysics Data System (ADS)

Miller, Kane; Li, Mingxiao; Walsh, Kevin M.; Fu, Xiao-An

2013-03-01

Vertically aligned silicon micropillar arrays have been created by deep reactive ion etching (DRIE) and used for a number of microfabricated devices including microfluidic devices, micropreconcentrators and photovoltaic cells. This paper delineates an experimental design performed on the Bosch process of DRIE of micropillar arrays. The arrays are fabricated with direct-write optical lithography without photomask, and the effects of DRIE process parameters, including etch cycle time, passivation cycle time, platen power and coil power on profile angle, scallop depth and scallop peak-to-peak distance are studied by statistical design of experiments. Scanning electron microscope images are used for measuring the resultant profile angles and characterizing the scalloping effect on the pillar sidewalls. The experimental results indicate the effects of the determining factors, etch cycle time, passivation cycle time and platen power, on the micropillar profile angles and scallop depths. An optimized DRIE process recipe for creating nearly 90° and smooth surface (invisible scalloping) has been obtained as a result of the statistical design of experiments.

Localized conductive patterning via focused electron beam reduction of graphene oxide

NASA Astrophysics Data System (ADS)

Kim, Songkil; Kulkarni, Dhaval D.; Henry, Mathias; Zackowski, Paul; Jang, Seung Soon; Tsukruk, Vladimir V.; Fedorov, Andrei G.

2015-03-01

We report on a method for "direct-write" conductive patterning via reduction of graphene oxide (GO) sheets using focused electron beam induced deposition (FEBID) of carbon. FEBID treatment of the intrinsically dielectric graphene oxide between two metal terminals opens up the conduction channel, thus enabling a unique capability for nanoscale conductive domain patterning in GO. An increase in FEBID electron dose results in a significant increase of the domain electrical conductivity with improving linearity of drain-source current vs. voltage dependence, indicative of a change of graphene oxide electronic properties from insulating to semiconducting. Density functional theory calculations suggest a possible mechanism underlying this experimentally observed phenomenon, as localized reduction of graphene oxide layers via interactions with highly reactive intermediates of electron-beam-assisted dissociation of surface-adsorbed hydrocarbon molecules. These findings establish an unusual route for using FEBID as nanoscale lithography and patterning technique for engineering carbon-based nanomaterials and devices with locally tailored electronic properties.

Comparison of technologies for nano device prototyping with a special focus on ion beams: A review

NASA Astrophysics Data System (ADS)

Bruchhaus, L.; Mazarov, P.; Bischoff, L.; Gierak, J.; Wieck, A. D.; Hövel, H.

2017-03-01

Nano device prototyping (NDP) is essential for realizing and assessing ideas as well as theories in the form of nano devices, before they can be made available in or as commercial products. In this review, application results patterned similarly to those in the semiconductor industry (for cell phone, computer processors, or memory) will be presented. For NDP, some requirements are different: thus, other technologies are employed. Currently, in NDP, for many applications direct write Gaussian vector scan electron beam lithography (EBL) is used to define the required features in organic resists on this scale. We will take a look at many application results carried out by EBL, self-organized 3D epitaxy, atomic probe microscopy (scanning tunneling microscope/atomic force microscope), and in more detail ion beam techniques. For ion beam techniques, there is a special focus on those based upon liquid metal (alloy) ion sources, as recent developments have significantly increased their applicability for NDP.

Challenges and requirements of mask data processing for multi-beam mask writer

NASA Astrophysics Data System (ADS)

Choi, Jin; Lee, Dong Hyun; Park, Sinjeung; Lee, SookHyun; Tamamushi, Shuichi; Shin, In Kyun; Jeon, Chan Uk

2015-07-01

To overcome the resolution and throughput of current mask writer for advanced lithography technologies, the platform of e-beam writer have been evolved by the developments of hardware and software in writer. Especially, aggressive optical proximity correction (OPC) for unprecedented extension of optical lithography and the needs of low sensitivity resist for high resolution result in the limit of variable shaped beam writer which is widely used for mass production. The multi-beam mask writer is attractive candidate for photomask writing of sub-10nm device because of its high speed and the large degree of freedom which enable high dose and dose modulation for each pixel. However, the higher dose and almost unlimited appetite for dose modulation challenge the mask data processing (MDP) in aspects of extreme data volume and correction method. Here, we discuss the requirements of mask data processing for multi-beam mask writer and presents new challenges of the data format, data flow, and correction method for user and supplier MDP tool.

Line-frequency doubling of directed self-assembly patterns for single-digit bit pattern media lithography

NASA Astrophysics Data System (ADS)

Patel, K. C.; Ruiz, R.; Lille, J.; Wan, L.; Dobiz, E.; Gao, H.; Robertson, N.; Albrecht, T. R.

2012-03-01

Directed self-assembly is emerging as a promising technology to define sub-20nm features. However, a straightforward path to scale block copolymer lithography to single-digit fabrication remains challenging given the diverse material properties found in the wide spectrum of self-assembling materials. A vast amount of block copolymer research for industrial applications has been dedicated to polystyrene-b-methyl methacrylate (PS-b-PMMA), a model system that displays multiple properties making it ideal for lithography, but that is limited by a weak interaction parameter that prevents it from scaling to single-digit lithography. Other block copolymer materials have shown scalability to much smaller dimensions, but at the expense of other material properties that could delay their insertion into industrial lithographic processes. We report on a line doubling process applied to block copolymer patterns to double the frequency of PS-b-PMMA line/space features, demonstrating the potential of this technique to reach single-digit lithography. We demonstrate a line-doubling process that starts with directed self-assembly of PS-b-PMMA to define line/space features. This pattern is transferred into an underlying sacrificial hard-mask layer followed by a growth of self-aligned spacers which subsequently serve as hard-masks for transferring the 2x frequency doubled pattern to the underlying substrate. We applied this process to two different block copolymer materials to demonstrate line-space patterns with a half pitch of 11nm and 7nm underscoring the potential to reach single-digit critical dimensions. A subsequent patterning step with perpendicular lines can be used to cut the fine line patterns into a 2-D array of islands suitable for bit patterned media. Several integration challenges such as line width control and line roughness are addressed.

Mask data processing in the era of multibeam writers

NASA Astrophysics Data System (ADS)

Abboud, Frank E.; Asturias, Michael; Chandramouli, Maesh; Tezuka, Yoshihiro

2014-10-01

Mask writers' architectures have evolved through the years in response to ever tightening requirements for better resolution, tighter feature placement, improved CD control, and tolerable write time. The unprecedented extension of optical lithography and the myriad of Resolution Enhancement Techniques have tasked current mask writers with ever increasing shot count and higher dose, and therefore, increasing write time. Once again, we see the need for a transition to a new type of mask writer based on massively parallel architecture. These platforms offer a step function improvement in both dose and the ability to process massive amounts of data. The higher dose and almost unlimited appetite for edge corrections open new windows of opportunity to further push the envelope. These architectures are also naturally capable of producing curvilinear shapes, making the need to approximate a curve with multiple Manhattan shapes unnecessary.

Top-Down Nanofabrication and Characterization of 20 nm Silicon Nanowires for Biosensing Applications

PubMed Central

M. N, M. Nuzaihan; Hashim, U.; Md Arshad, M. K.; Ruslinda, A. Rahim; Rahman, S. F. A.; Fathil, M. F. M.; Ismail, Mohd. H.

2016-01-01

A top-down nanofabrication approach is used to develop silicon nanowires from silicon-on-insulator (SOI) wafers and involves direct-write electron beam lithography (EBL), inductively coupled plasma-reactive ion etching (ICP-RIE) and a size reduction process. To achieve nanometer scale size, the crucial factors contributing to the EBL and size reduction processes are highlighted. The resulting silicon nanowires, which are 20 nm in width and 30 nm in height (with a triangular shape) and have a straight structure over the length of 400 μm, are fabricated precisely at the designed location on the device. The device is applied in biomolecule detection based on the changes in drain current (Ids), electrical resistance and conductance of the silicon nanowires upon hybridization to complementary target deoxyribonucleic acid (DNA). In this context, the scaled-down device exhibited superior performances in terms of good specificity and high sensitivity, with a limit of detection (LOD) of 10 fM, enables for efficient label-free, direct and higher-accuracy DNA molecules detection. Thus, this silicon nanowire can be used as an improved transducer and serves as novel biosensor for future biomedical diagnostic applications. PMID:27022732

Optical proximity correction (OPC) in near-field lithography with pixel-based field sectioning time modulation

NASA Astrophysics Data System (ADS)

Oh, Seonghyeon; Han, Dandan; Shim, Hyeon Bo; Hahn, Jae W.

2018-01-01

Subwavelength features have been successfully demonstrated in near-field lithography. In this study, the point spread function (PSF) of a near-field beam spot from a plasmonic ridge nanoaperture is discussed with regard to the complex decaying characteristic of a non-propagating wave and the asymmetry of the field distribution for pattern design. We relaxed the shape complexity of the field distribution with pixel-based optical proximity correction (OPC) for simplifying the pattern image distortion. To enhance the pattern fidelity for a variety of arbitrary patterns, field-sectioning structures are formulated via convolutions with a time-modulation function and a transient PSF along the near-field dominant direction. The sharpness of corners and edges, and line shortening can be improved by modifying the original target pattern shape using the proposed approach by considering both the pattern geometry and directionality of the field decay for OPC in near-field lithography.

Optical proximity correction (OPC) in near-field lithography with pixel-based field sectioning time modulation.

PubMed

Oh, Seonghyeon; Han, Dandan; Shim, Hyeon Bo; Hahn, Jae W

2018-01-26

Subwavelength features have been successfully demonstrated in near-field lithography. In this study, the point spread function (PSF) of a near-field beam spot from a plasmonic ridge nanoaperture is discussed with regard to the complex decaying characteristic of a non-propagating wave and the asymmetry of the field distribution for pattern design. We relaxed the shape complexity of the field distribution with pixel-based optical proximity correction (OPC) for simplifying the pattern image distortion. To enhance the pattern fidelity for a variety of arbitrary patterns, field-sectioning structures are formulated via convolutions with a time-modulation function and a transient PSF along the near-field dominant direction. The sharpness of corners and edges, and line shortening can be improved by modifying the original target pattern shape using the proposed approach by considering both the pattern geometry and directionality of the field decay for OPC in near-field lithography.

Tissue Photolithography

NASA Technical Reports Server (NTRS)

Wade, Lawrence A.; Kartalov, Emil; Shibata, Darryl; Taylor, Clive

2011-01-01

Tissue lithography will enable physicians and researchers to obtain macromolecules with high purity (greater than 90 percent) from desired cells in conventionally processed, clinical tissues by simply annotating the desired cells on a computer screen. After identifying the desired cells, a suitable lithography mask will be generated to protect the contents of the desired cells while allowing destruction of all undesired cells by irradiation with ultraviolet light. The DNA from the protected cells can be used in a number of downstream applications including DNA sequencing. The purity (i.e., macromolecules isolated form specific cell types) of such specimens will greatly enhance the value and information of downstream applications. In this method, the specific cells are isolated on a microscope slide using photolithography, which will be faster, more specific, and less expensive than current methods. It relies on the fact that many biological molecules such as DNA are photosensitive and can be destroyed by ultraviolet irradiation. Therefore, it is possible to protect the contents of desired cells, yet destroy undesired cells. This approach leverages the technologies of the microelectronics industry, which can make features smaller than 1 micrometer with photolithography. A variety of ways has been created to achieve identification of the desired cell, and also to designate the other cells for destruction. This can be accomplished through chrome masks, direct laser writing, and also active masking using dynamic arrays. Image recognition is envisioned as one method for identifying cell nuclei and cell membranes. The pathologist can identify the cells of interest using a microscopic computerized image of the slide, and appropriate custom software. In one of the approaches described in this work, the software converts the selection into a digital mask that can be fed into a direct laser writer, e.g. the Heidelberg DWL66. Such a machine uses a metalized glass plate (with chrome metallization) on which there is a thin layer of photoresist. The laser transfers the digital mask onto the photoresist by direct writing, with typical best resolution of 2 micrometers. The plate is then developed to remove the exposed photoresist, which leaves the exposed areas susceptible to chemical chrome etch. The etch removes the unprotected chrome. The rest of the photoresist is then removed, by either ultraviolet organic solvent or over-development. The remaining chrome pattern is quickly oxidized by atmospheric exposure (typically within 30 seconds). The ready chrome mask is now applied to the tissue slide and aligned manually, or using automatic software and pre-designed alignment marks. The slide plate sandwich is then exposed to UV to destroy the DNA of the unwanted cells. The slide and plate are separated and the slide is processed in a standard way to prepare for polymerase chain reaction (PCR) and potential identification of cancer sequences.

Assessing the manufacturing tolerances and uniformity of CMOS compatible metamaterial fabrication

DOE Office of Scientific and Technical Information (OSTI.GOV)

Musick, Katherine M.; Wendt, Joel R.; Resnick, Paul J.

Here, the manufacturing tolerances of a stencil-lithography variant, membrane projection lithography, were investigated. In the first part of this work, electron beam lithography was used to create stencils with a range of linewidths. These patterns were transferred into the stencil membrane and used to pattern metallic lines on vertical silicon faces. Only the largest lines, with a nominal width of 84 nm, were resolved, resulting in 45 ± 10 nm (average ± standard deviation) as deposited with 135-nm spacing. Although written in the e-beam write software file as 84-nm in width, the lines exhibited linewidth bias. This can largely bemore » attributed to nonvertical sidewalls inherent to dry etching techniques that cause proportionally larger impact with decreasing feature size. The line edge roughness can be significantly attributed to the grain structure of the aluminum nitride stencil membrane. In the second part of this work, the spatial uniformity of optically defined (as opposed to e-beam written) metamaterial structures over large areas was assessed. A Fourier transform infrared spectrometer microscope was used to collect the reflection spectra of samples with optically defined vertical split ring from 25 spatially resolved 300 × 300 μm regions in a 1-cm 2 area. The technique is shown to provide a qualitative measure of the uniformity of the inclusions.« less

Assessing the manufacturing tolerances and uniformity of CMOS compatible metamaterial fabrication

DOE PAGES

Musick, Katherine M.; Wendt, Joel R.; Resnick, Paul J.; ...

2018-01-18

Here, the manufacturing tolerances of a stencil-lithography variant, membrane projection lithography, were investigated. In the first part of this work, electron beam lithography was used to create stencils with a range of linewidths. These patterns were transferred into the stencil membrane and used to pattern metallic lines on vertical silicon faces. Only the largest lines, with a nominal width of 84 nm, were resolved, resulting in 45 ± 10 nm (average ± standard deviation) as deposited with 135-nm spacing. Although written in the e-beam write software file as 84-nm in width, the lines exhibited linewidth bias. This can largely bemore » attributed to nonvertical sidewalls inherent to dry etching techniques that cause proportionally larger impact with decreasing feature size. The line edge roughness can be significantly attributed to the grain structure of the aluminum nitride stencil membrane. In the second part of this work, the spatial uniformity of optically defined (as opposed to e-beam written) metamaterial structures over large areas was assessed. A Fourier transform infrared spectrometer microscope was used to collect the reflection spectra of samples with optically defined vertical split ring from 25 spatially resolved 300 × 300 μm regions in a 1-cm 2 area. The technique is shown to provide a qualitative measure of the uniformity of the inclusions.« less

Approximating gecko setae via direct laser lithography

NASA Astrophysics Data System (ADS)

Tricinci, Omar; Eason, Eric V.; Filippeschi, Carlo; Mondini, Alessio; Mazzolai, Barbara; Pugno, Nicola M.; Cutkosky, Mark R.; Greco, Francesco; Mattoli, Virgilio

2018-07-01

The biomimetic replication of dry adhesion present in the gecko’s foot has attracted great interest in recent years. All the microfabrication techniques used so far were not able to faithfully reproduce the hierarchical and complex three-dimensional geometry of the gecko’s setae, with features at the micro- and nano-scale, thus reducing the effectiveness that such conformal morphology could provide. By means of direct laser lithography we fabricated artificial hairs that faithfully reproduce the natural model. This technique allows the fabrication of three-dimensional microstructures with outstanding results in terms of reproducibility and resolution at the micro- and nano-scale. It was possible to get very close to the morphology of the natural gecko setae, especially concerning the hierarchical shape. We designed several morphologies for the setae and studied the effects in terms of adhesion and friction performances compared to the natural counterpart, showing the interplay between morphology, dimensional scaling and materials. Direct laser lithography promises great applications in the biomimetics field, paving the way to the implementation of the concept of hierarchical bioinspired dry adhesives.

Production data from a Leica ZBA31H+ shaped e-beam mask writer located at the Photronics facility, Manchester, England

NASA Astrophysics Data System (ADS)

Johnson, Stephen; Loughran, Dominic; Osborne, Peter; Sixt, Pierre; Doering, Hans-Joachim

1999-06-01

The ZBA31H+) is a variable shaped spot, vector scan e- beam lithography system operating at 20 keV. The specified performance is designed to produce reticles to 250 nanometer design rules, and beyond. In November 98 the acceptance results of a newly installed Leica ZBA31H+), at Photonic Manchester, were presented in a paper at the VDE/VDI 15th European Conference on Mask Technology. This paper is a continuation of that work and presents data from a capability study carried out, on 4000 angstrom EBR9 HS31 resist. Analysis of: mean to target, uniformity, X/Y bias, isolated vs. dense linewidths, linearity, and registration performance of the tool is presented, and the effects of re- iterative develop on process capability compared. Theoretically, a shaped beam system has advantages over raster scan in terms of write time and edge definition capabilities. In this paper, comparative write times against an Etec Mebes 4500 system are included. The ZBA31H+) has to write very small polygons in order to image non-axial or non-45 degree features. The resulting effect on image quality and write time is investigated. In order to improve the fidelity of small OPC structures, Leica have investigated alternative writing strategies, and their results to data are presented here.

Multilayer on-chip stacked Fresnel zone plates: Hard x-ray fabrication and soft x-ray simulations

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Kenan; Wojcik, Michael J.; Ocola, Leonidas E.

2015-11-01

Fresnel zone plates are widely used as x-ray nanofocusing optics. To achieve high spatial resolution combined with good focusing efficiency, high aspect ratio nanolithography is required, and one way to achieve that is through multiple e-beam lithography writing steps to achieve on-chip stacking. A two-step writing process producing 50 nm finest zone width at a zone thickness of 1.14 µm for possible hard x-ray applications is shown here. The authors also consider in simulations the case of soft x-ray focusing where the zone thickness might exceed the depth of focus. In this case, the authors compare on-chip stacking with, andmore » without, adjustment of zone positions and show that the offset zones lead to improved focusing efficiency. The simulations were carried out using a multislice propagation method employing Hankel transforms.« less

Etched-multilayer phase shifting masks for EUV lithography

DOEpatents

Chapman, Henry N.; Taylor, John S.

2005-04-05

A method is disclosed for the implementation of phase shifting masks for EUV lithography. The method involves directly etching material away from the multilayer coating of the mask, to cause a refractive phase shift in the mask. By etching into the multilayer (for example, by reactive ion etching), rather than depositing extra material on the top of the multilayer, there will be minimal absorption loss associated with the phase shift.

Sub-30 nm patterning of molecular resists based on crosslinking through tip based oxidation

NASA Astrophysics Data System (ADS)

Lorenzoni, Matteo; Wagner, Daniel; Neuber, Christian; Schmidt, Hans-Werner; Perez-Murano, Francesc

2018-06-01

Oxidation Scanning Probe Lithography (o-SPL) is an established method employed for device patterning at the nanometer scale. It represents a feasible and inexpensive alternative to standard lithographic techniques such as electron beam lithography (EBL) and nanoimprint lithography (NIL). In this work we applied non-contact o-SPL to an engineered class of molecular resists in order to obtain crosslinking by electrochemical driven oxidation. By patterning and developing various resist formulas we were able to obtain a reliable negative tone resist behavior based on local oxidation. Under optimal conditions, directly written patterns can routinely reach sub-30 nm lateral resolution, while the final developed features result wider, approaching 50 nm width.

Uniformity of LED light illumination in application to direct imaging lithography

NASA Astrophysics Data System (ADS)

Huang, Ting-Ming; Chang, Shenq-Tsong; Tsay, Ho-Lin; Hsu, Ming-Ying; Chen, Fong-Zhi

2016-09-01

Direct imaging has widely applied in lithography for a long time because of its simplicity and easy-maintenance. Although this method has limitation of lithography resolution, it is still adopted in industries. Uniformity of UV irradiance for a designed area is an important requirement. While mercury lamps were used as the light source in the early stage, LEDs have drawn a lot of attention for consideration from several aspects. Although LED has better and better performance, arrays of LEDs are required to obtain desired irradiance because of limitation of brightness for a single LED. Several effects are considered that affect the uniformity of UV irradiance such as alignment of optics, temperature of each LED, performance of each LED due to production uniformity, and pointing of LED module. Effects of these factors are considered to study the uniformity of LED Light Illumination. Numerical analysis is performed by assuming a serious of control factors to have a better understanding of each factor.

Rapid prototyping of microstructures in polydimethylsiloxane (PDMS) by direct UV-lithography.

PubMed

Scharnweber, Tim; Truckenmüller, Roman; Schneider, Andrea M; Welle, Alexander; Reinhardt, Martina; Giselbrecht, Stefan

2011-04-07

Microstructuring of polydimethylsiloxane (PDMS) is a key step for many lab-on-a-chip (LOC) applications. In general, the structure is generated by casting the liquid prepolymer against a master. The production of the master in turn calls for special equipment and know how. Furthermore, a given master only allows the reproduction of the defined structure. We report on a simple, cheap and practical method to produce microstructures in already cured PDMS by direct UV-lithography followed by chemical development. Due to the available options during the lithographic process like multiple exposures, the method offers a high design flexibility granting easy access to complex and stepped structures. Furthermore, no master is needed and the use of pre-cured PDMS allows processing at ambient (light) conditions. Features down to approximately 5 µm and a depth of 10 µm can be realised. As a proof of principle, we demonstrate the feasibility of the process by applying the structures to various established soft lithography techniques.

CA resist with high sensitivity and sub-100-nm resolution for advanced mask and device making

NASA Astrophysics Data System (ADS)

Kwong, Ranee W.; Huang, Wu-Song; Hartley, John G.; Moreau, Wayne M.; Robinson, Christopher F.; Angelopoulos, Marie; Magg, Christopher; Lawliss, Mark

2000-07-01

Recently, there is significant interest in using CA resists for electron beam (E-Beam) applications including mask making, direct write, and projection printing. CA resists provide superior lithographic performance in comparison to traditional non CA E-beam resists in particular high contrast, resolution, and sensitivity. However, most of the commercially available CA resists have the concern of airborne base contaminants and sensitivity to PAB and/or PEB temperatures. In this presentation, we will discuss a new improved ketal resist system referred to as KRS-XE which exhibits excellent lithography, is robust toward airborne base, compatible with 0.263 N TMAH aqueous developer and exhibits a large PAB/PEB latitude. With the combination of a high performance mask making E-beam exposure tool, high kV (75 kV) shaped beam system EL4+ and the KRS-XE resist, we have printed 75 nm lines/space features with excellent profile control at a dose of 13 (mu) C/cm2 at 75 kV. The shaped beam vector scan system used here provides an unique property in resolving small features in lithography and throughput. Overhead in EL4+ limits the systems ability to fully exploit the sensitivity of the new resist for throughput. The EL5 system, currently in the build phase, has sufficiently low overhead that it is projected to print a 4X, 16G, DRAM mask with OPC in under 3 hours with the CA resist. We will discuss the throughput advantages of the next generation EL5 system over the existing EL4+. In addition we will show the resolution of KRS-XE down to 70 nm using the PREVAIL projection printing system.

An investigation on defect-generation conditions in immersion lithography

NASA Astrophysics Data System (ADS)

Tomita, Tadatoshi; Shimoaoki, Takeshi; Enomoto, Masashi; Kyoda, Hideharu; Kitano, Junichi; Suganaga, Toshifumi

2006-03-01

As a powerful candidate for a lithography technique that can accommodate the scaling-down of semiconductors, 193-nm immersion lithography-which realizes a high numerical aperture (NA) and uses deionized water as the medium between the lens and wafer in the exposure system-has been developing at a rapid pace and has reached the stage of practical application. In regards to defects that are a cause for concern in the case of 193-nm immersion lithography, however, many components are still unclear and many problems remain to be solved. It has been pointed out, for example, that in the case of 193-nm immersion lithography, immersion of the resist film in deionized water during exposure causes infiltration of moisture into the resist film, internal components of the resist dissolve into the deionized water, and residual water generated during exposure affects post-processing. Moreover, to prevent this influence of directly immersing the resist in de-ionized water, application of a protective film is regarded as effective. However, even if such a film is applied, it is still highly likely that the above-mentioned defects will still occur. Accordingly, to reduce these defects, it is essential to identify the typical defects occurring in 193-nm immersion lithography and to understand the condition for generation of defects by using some kinds of protective films and resist materials. Furthermore, from now onwards, with further scaling down of semiconductors, it is important to maintain a clear understanding of the relation between defect-generation conditions and critical dimensions (CD). Aiming to extract typical defects occurring in 193-nm immersion lithography, the authors carried out a comparative study with dry exposure lithography, thereby confirming several typical defects associated with immersion lithography. We then investigated the conditions for generation of defects in the case of some kinds of protective films. In addition to that, by investigating the defect-generation conditions and comparing the classification data between wet and dry exposure, we were able to determine the origin of each particular defect involved in immersion lithography. Furthermore, the comparison of CD for wet and dry processing could indicate the future defectivity levels to be expected with shrinking immersion process critical dimensions.

X-ray lithography using holographic images

DOEpatents

Howells, Malcolm R.; Jacobsen, Chris

1995-01-01

A non-contact X-ray projection lithography method for producing a desired X-ray image on a selected surface of an X-ray-sensitive material, such as photoresist material on a wafer, the desired X-ray image having image minimum linewidths as small as 0.063 .mu.m, or even smaller. A hologram and its position are determined that will produce the desired image on the selected surface when the hologram is irradiated with X-rays from a suitably monochromatic X-ray source of a selected wavelength .lambda.. On-axis X-ray transmission through, or off-axis X-ray reflection from, a hologram may be used here, with very different requirements for monochromaticity, flux and brightness of the X-ray source. For reasonable penetration of photoresist materials by X-rays produced by the X-ray source, the wavelength X, is preferably chosen to be no more than 13.5 nm in one embodiment and more preferably is chosen in the range 1-5 nm in the other embodiment. A lower limit on linewidth is set by the linewidth of available microstructure writing devices, such as an electron beam.

Fabrication of Pt nanowires with a diffraction-unlimited feature size by high-threshold lithography

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Li, E-mail: lil@cust.edu.cn, E-mail: wangz@cust.edu.cn, E-mail: kq-peng@bnu.edu.cn; Zhang, Ziang; Yu, Miao

2015-09-28

Although the nanoscale world can already be observed at a diffraction-unlimited resolution using far-field optical microscopy, to make the step from microscopy to lithography still requires a suitable photoresist material system. In this letter, we consider the threshold to be a region with a width characterized by the extreme feature size obtained using a Gaussian beam spot. By narrowing such a region through improvement of the threshold sensitization to intensity in a high-threshold material system, the minimal feature size becomes smaller. By using platinum as the negative photoresist, we demonstrate that high-threshold lithography can be used to fabricate nanowire arraysmore » with a scalable resolution along the axial direction of the linewidth from the micro- to the nanoscale using a nanosecond-pulsed laser source with a wavelength λ{sub 0} = 1064 nm. The minimal feature size is only several nanometers (sub λ{sub 0}/100). Compared with conventional polymer resist lithography, the advantages of high-threshold lithography are sharper pinpoints of laser intensity triggering the threshold response and also higher robustness allowing for large area exposure by a less-expensive nanosecond-pulsed laser.« less

Lithography for enabling advances in integrated circuits and devices.

PubMed

Garner, C Michael

2012-08-28

Because the transistor was fabricated in volume, lithography has enabled the increase in density of devices and integrated circuits. With the invention of the integrated circuit, lithography enabled the integration of higher densities of field-effect transistors through evolutionary applications of optical lithography. In 1994, the semiconductor industry determined that continuing the increase in density transistors was increasingly difficult and required coordinated development of lithography and process capabilities. It established the US National Technology Roadmap for Semiconductors and this was expanded in 1999 to the International Technology Roadmap for Semiconductors to align multiple industries to provide the complex capabilities to continue increasing the density of integrated circuits to nanometre scales. Since the 1960s, lithography has become increasingly complex with the evolution from contact printers, to steppers, pattern reduction technology at i-line, 248 nm and 193 nm wavelengths, which required dramatic improvements of mask-making technology, photolithography printing and alignment capabilities and photoresist capabilities. At the same time, pattern transfer has evolved from wet etching of features, to plasma etch and more complex etching capabilities to fabricate features that are currently 32 nm in high-volume production. To continue increasing the density of devices and interconnects, new pattern transfer technologies will be needed with options for the future including extreme ultraviolet lithography, imprint technology and directed self-assembly. While complementary metal oxide semiconductors will continue to be extended for many years, these advanced pattern transfer technologies may enable development of novel memory and logic technologies based on different physical phenomena in the future to enhance and extend information processing.

Methodology for evaluating pattern transfer completeness in inkjet printing with irregular edges

NASA Astrophysics Data System (ADS)

Huang, Bo-Cin; Chan, Hui-Ju; Hong, Jian-Wei; Lo, Cheng-Yao

2016-06-01

A methodology for quantifying and qualifying pattern transfer completeness in inkjet printing through examining both pattern dimensions and pattern contour deviations from reference design is proposed, which enables scientifically identifying and evaluating inkjet-printed lines, corners, circles, ellipses, and spirals with irregular edges of bulging, necking, and unpredictable distortions resulting from different process conditions. This methodology not only avoids differences in individual perceptions of ambiguous pattern distortions but also indicates the systematic effects of mechanical stresses applied in different directions to a polymer substrate, and is effective for both optical and electrical microscopy in direct and indirect lithography or lithography-free patterning.

Fabrication of a Polymer Micro Needle Array by Mask-Dragging X-Ray Lithography and Alignment X-Ray Lithography

NASA Astrophysics Data System (ADS)

Li, Yi-Gui; Yang, Chun-Sheng; Liu, Jing-Quan; Sugiyama, Susumu

2011-03-01

Polymer materials such as transparent thermoplastic poly(methyl methacrylate) (PMMA) have been of great interest in the research and development of integrated circuits and micro-electromechanical systems due to their relatively low cost and easy process. We fabricated PMMA-based polymer hollow microneedle arrays by mask-dragging and aligning x-ray lithography. Techniques for 3D micromachining by direct lithography using x-rays are developed. These techniques are based on using image projection in which the x-ray is used to illuminate an appropriate gold pattern on a polyimide film mask. The mask is imaged onto the PMMA sample. A pattern with an area of up to 100 × 100mm2 can be fabricated with sub-micron resolution and a highly accurate order of a few microns by using a dragging mask. The fabrication technology has several advantages, such as forming complex 3D micro structures, high throughput and low cost.

Suspended liquid subtractive lithography: printing three dimensional channels directly into uncured PDMS

NASA Astrophysics Data System (ADS)

Helmer, D.; Voigt, A.; Wagner, S.; Keller, N.; Sachsenheimer, K.; Kotz, F.; Nargang, T. M.; Rapp, B. E.

2018-02-01

Polydimethylsiloxane (PDMS) is one of the most widely used polymers for the generation of microfluidic chips. The standard procedures of soft lithography require the formation of a new master structure for every design which is timeconsuming and expensive. All channel generated by soft lithography need to be consecutively sealed by bonding which is a process that can proof to be hard to control. Channel cross-sections are largely restricted to squares or flat-topped designs and the generation of truly three-dimensional designs is not straightforward. Here we present Suspended Liquid Subtractive Lithography (SLSL) a method for generating microfluidic channels of nearly arbitrary three-dimensional structures in PDMS that do not require master formation or bonding and give circular channel cross sections which are especially interesting for mimicking in vivo environments. In SLSL, an immiscible liquid is introduced into the uncured PDMS by a capillary mounted on a 3D printer head. The liquid forms continuous "threads" inside the matrix thus creating void suspended channel structures.

Fabrication of Nonperiodic Metasurfaces by Microlens Projection Lithography.

PubMed

Gonidec, Mathieu; Hamedi, Mahiar M; Nemiroski, Alex; Rubio, Luis M; Torres, Cesar; Whitesides, George M

2016-07-13

This paper describes a strategy that uses template-directed self-assembly of micrometer-scale microspheres to fabricate arrays of microlenses for projection photolithography of periodic, quasiperiodic, and aperiodic infrared metasurfaces. This method of "template-encoded microlens projection lithography" (TEMPL) enables rapid prototyping of planar, multiscale patterns of similarly shaped structures with critical dimensions down to ∼400 nm. Each of these structures is defined by local projection lithography with a single microsphere acting as a lens. This paper explores the use of TEMPL for the fabrication of a broad range of two-dimensional lattices with varying types of nonperiodic spatial distribution. The matching optical spectra of the fabricated and simulated metasurfaces confirm that TEMPL can produce structures that conform to expected optical behavior.

Mask-induced aberration in EUV lithography

NASA Astrophysics Data System (ADS)

Nakajima, Yumi; Sato, Takashi; Inanami, Ryoichi; Nakasugi, Tetsuro; Higashiki, Tatsuhiko

2009-04-01

We estimated aberrations using Zernike sensitivity analysis. We found the difference of the tolerated aberration with line direction for illumination. The tolerated aberration of perpendicular line for illumination is much smaller than that of parallel line. We consider this difference to be attributable to the mask 3D effect. We call it mask-induced aberration. In the case of the perpendicular line for illumination, there was a difference in CD between right line and left line without aberration. In this report, we discuss the possibility of pattern formation in NA 0.25 generation EUV lithography tool. In perpendicular pattern for EUV light, the dominant part of aberration is mask-induced aberration. In EUV lithography, pattern correction based on the mask topography effect will be more important.

Robust valley polarization of helium ion modified atomically thin MoS2

NASA Astrophysics Data System (ADS)

Klein, J.; Kuc, A.; Nolinder, A.; Altzschner, M.; Wierzbowski, J.; Sigger, F.; Kreupl, F.; Finley, J. J.; Wurstbauer, U.; Holleitner, A. W.; Kaniber, M.

2018-01-01

Atomically thin semiconductors have dimensions that are commensurate with critical feature sizes of future optoelectronic devices defined using electron/ion beam lithography. Robustness of their emergent optical and valleytronic properties is essential for typical exposure doses used during fabrication. Here, we explore how focused helium ion bombardement affects the intrinsic vibrational, luminescence and valleytronic properties of atomically thin MoS2 . By probing the disorder dependent vibrational response we deduce the interdefect distance by applying a phonon confinement model. We show that the increasing interdefect distance correlates with disorder-related luminscence arising 180 meV below the neutral exciton emission. We perform ab initio density functional theory of a variety of defect related morphologies, which yield first indications on the origin of the observed additional luminescence. Remarkably, no significant reduction of free exciton valley polarization is observed until the interdefect distance approaches a few nanometers, namely the size of the free exciton Bohr radius. Our findings pave the way for direct writing of sub-10 nm nanoscale valleytronic devices and circuits using focused helium ions.

Fabrication of micro-optical components using femtosecond oscillator pulses

NASA Astrophysics Data System (ADS)

Rodrigues, Vanessa R. M.; Ramachandran, Hema; Chidangil, Santhosh; Mathur, Deepak

2017-06-01

With a penchant for integrated photonics and miniaturization, the fabrication of micron sized optical elements using precision laser pulse management is drawing attention due to the possibility of minimizing tolerances for collateral material damage. The work presented here deals with the design, fabrication and characterization of a range of diffractive optics - gratings, grids and Fresnel zone plates - on transparent and metallic samples. Their low volume, light weight, transmission bandwidth, high damage threshold and flexible design make them suited for replacing conventional refractive optical elements. Our one-step, mask-less, 3-D laser direct writing process is a green fabrication technique which is in stark contrast to currently popular Photo-lithography based micro-structuring. Our method provides scope for modifications on the surface as well as within the bulk of the material. The mechanism involved in the fabrication of these optics on transparent and thin metallic substrates differ from each other. Our studies show that both amplitude and phase versions of micro-structures were achieved successfully with performances bearing 98% accuracy vis-a-vis theoretical expectations.

Programmable Schottky Junctions Based on Ferroelectric Gated MoS2 Transistors

NASA Astrophysics Data System (ADS)

Xiao, Zhiyong; Song, Jingfeng; Drcharme, Stephen; Hong, Xia

We report a programmable Schottky junction based on MoS2 field effect transistors with a SiO2 back gate and a ferroelectric copolymer poly(vinylidene-fluoride-trifluorethylene) (PVDF) top gate. We fabricated mechanically exfoliated single layer MoS2 flakes into two point devices via e-beam lithography, and deposited on the top of the devices ~20 nm PVDF thin films. The polarization of the PVDF layer is controlled locally by conducting atomic force microscopy. The devices exhibit linear ID-VD characteristics when the ferroelectric gate is uniformly polarized in one direction. We then polarized the gate into two domains with opposite polarization directions, and observed that the ID-VD characteristics of the MoS2 channel can be modulated between linear and rectified behaviors depending on the back gate voltage. The nonlinear ID-VD relation emerges when half of the channel is in the semiconductor phase while the other half is in the metallic phase, and it can be well described by the thermionic emission model with a Schottky barrier of ~0.5 eV. The Schottky junction can be erased by re-write the entire channel in the uniform polarization state. Our study facilitates the development of programmable, multifunctional nanoelectronics based on layered 2D TMDs..

Femtosecond laser ablation of transparent microphotonic devices and computer-generated holograms.

PubMed

Alqurashi, Tawfiq; Montelongo, Yunuen; Penchev, Pavel; Yetisen, Ali K; Dimov, Stefan; Butt, Haider

2017-09-21

Femtosecond laser ablation allows direct patterning of engineering materials in industrial settings without requiring multistage processes such as photolithography or electron beam lithography. However, femtosecond lasers have not been widely used to construct volumetric microphotonic devices and holograms with high reliability and cost efficiency. Here, a direct femtosecond laser writing process is developed to rapidly produce transmission 1D/2D gratings, Fresnel Zone Plate lenses, and computer-generated holograms. The optical properties including light transmission, angle-dependent resolution, and light polarization effects for the microphotonic devices have been characterized. Varying the depth of the microgratings from 400 nm to 1.5 μm allowed the control over their transmission intensity profile. The optical properties of the 1D/2D gratings were validated through a geometrical theory of diffraction model involving 2D phase modulation. The produced Fresnel lenses had transmission efficiency of ∼60% at normal incidence and they preserved the polarization of incident light. The computer-generated holograms had an average transmission efficiency of 35% over the visible spectrum. These microphotonic devices had wettability resistance of contact angle ranging from 44° to 125°. These devices can be used in a variety of applications including wavelength-selective filters, dynamic displays, fiber optics, and biomedical devices.

Scalable fabrication of strongly textured organic semiconductor micropatterns by capillary force lithography.

PubMed

Jo, Pil Sung; Vailionis, Arturas; Park, Young Min; Salleo, Alberto

2012-06-26

Strongly textured organic semiconductor micropatterns made of the small molecule dioctylbenzothienobenzothiophene (C(8)-BTBT) are fabricated by using a method based on capillary force lithography (CFL). This technique provides the C(8)-BTBT solution with nucleation sites for directional growth, and can be used as a scalable way to produce high quality crystalline arrays in desired regions of a substrate for OFET applications. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Fabrication of three-dimensional millimeter-height structures using direct ultraviolet lithography on liquid-state photoresist for simple and fast manufacturing

NASA Astrophysics Data System (ADS)

Kim, Jungkwun; Yoon, Yong-Kyu

2015-07-01

A rapid three-dimensional (3-D) ultraviolet (UV) lithography process for the fabrication of millimeter-tall high aspect ratio complex structures is presented. The liquid-state negative-tone photosensitive polyurethane, LF55GN, has been directly photopatterned using multidirectionally projected UV light for 3-D micropattern formation. The proposed lithographic scheme enabled us to overcome the maximum height obtained with a photopatternable epoxy, SU8, which has been conventionally most commonly used for the fabrication of tall and high aspect ratio microstructures. Also, the fabrication process time has been significantly reduced by eliminating photoresist-baking steps. Computer-controlled multidirectional UV lithography has been employed to fabricate 3-D structures, where the UV-exposure substrate is dynamically tilt-rotating during UV exposure to create various 3-D ray traces in the polyurethane layer. LF55GN has been characterized to provide feasible fabrication conditions for the multidirectional UV lithography. Very tall structures including a 6-mm tall triangular slab and a 5-mm tall hexablaze have been successfully fabricated. A 4.5-mm tall air-lifted polymer-core bowtie monopole antenna, which is the tallest monopole structure fabricated by photolithography and subsequent metallization, has been successfully demonstrated. The antenna shows a resonant radiation frequency of 12.34 GHz, a return loss of 36 dB, and a 10 dB bandwidth of 7%.

Servo-integrated patterned media by hybrid directed self-assembly.

PubMed

Xiao, Shuaigang; Yang, Xiaomin; Steiner, Philip; Hsu, Yautzong; Lee, Kim; Wago, Koichi; Kuo, David

2014-11-25

A hybrid directed self-assembly approach is developed to fabricate unprecedented servo-integrated bit-patterned media templates, by combining sphere-forming block copolymers with 5 teradot/in.(2) resolution capability, nanoimprint and optical lithography with overlay control. Nanoimprint generates prepatterns with different dimensions in the data field and servo field, respectively, and optical lithography controls the selective self-assembly process in either field. Two distinct directed self-assembly techniques, low-topography graphoepitaxy and high-topography graphoepitaxy, are elegantly integrated to create bit-patterned templates with flexible embedded servo information. Spinstand magnetic test at 1 teradot/in.(2) shows a low bit error rate of 10(-2.43), indicating fully functioning bit-patterned media and great potential of this approach for fabricating future ultra-high-density magnetic storage media.

Fabrication of high-transmission microporous membranes by proton beam writing-based molding technique

NASA Astrophysics Data System (ADS)

Wang, Liping; Meyer, Clemens; Guibert, Edouard; Homsy, Alexandra; Whitlow, Harry J.

2017-08-01

Porous membranes are widely used as filters in a broad range of micro and nanofluidic applications, e.g. organelle sorters, permeable cell growth substrates, and plasma filtration. Conventional silicon fabrication approaches are not suitable for microporous membranes due to the low mechanical stability of thin film substrates. Other techniques like ion track etching are limited to the production of randomly distributed and randomly orientated pores with non-uniform pore sizes. In this project, we developed a procedure for fabricating high-transmission microporous membranes by proton beam writing (PBW) with a combination of spin-casting and soft lithography. In this approach, focused 2 MeV protons were used to lithographically write patterns consisting of hexagonal arrays of high-density pillars of few μm size in a SU-8 layer coated on a silicon wafer. After development, the pillars were conformably coated with a thin film of poly-para-xylylene (Parylene)-C release agent and spin-coated with polydimethylsiloxane (PDMS). To facilitate demolding, a special technique based on the use of a laser-cut sealing tape ring was developed. This method facilitated the successful delamination of 20-μm thick PDMS membrane with high-density micropores from the mold without rupture or damage.

The lithographer's dilemma: shrinking without breaking the bank

NASA Astrophysics Data System (ADS)

Levinson, Harry J.

2013-10-01

It can no longer be assumed that the lithographic scaling which has previously driven Moore's Law will lead in the future to reduced cost per transistor. Until recently, higher prices for lithography tools were offset by improvements in scanner productivity. The necessity of using double patterning to extend scaling beyond the single exposure resolution limit of optical lithography has resulted in a sharp increase in the cost of patterning a critical construction layer that has not been offset by improvements in exposure tool productivity. Double patterning has also substantially increased the cost of mask sets. EUV lithography represents a single patterning option, but the combination of very high exposure tools prices, moderate throughput, high maintenance costs, and expensive mask blanks makes this a solution more expensive than optical double patterning but less expensive than triple patterning. Directed self-assembly (DSA) could potentially improve wafer costs, but this technology currently is immature. There are also design layout and process integration issues associated with DSA that need to be solved in order to obtain full benefit from tighter pitches. There are many approaches for improving the cost effectiveness of lithography. Innovative double patterning schemes lead to smaller die. EUV lithography productivity can be improved with higher power light sources and improved reliability. There are many technical and business challenges for extending EUV lithography to higher numerical apertures. Efficient contact hole and cut mask solutions are needed, as well as very tight overlay control, regardless of lithographic solution.

Via patterning in the 7-nm node using immersion lithography and graphoepitaxy directed self-assembly

NASA Astrophysics Data System (ADS)

Doise, Jan; Bekaert, Joost; Chan, Boon Teik; Hori, Masafumi; Gronheid, Roel

2017-04-01

Insertion of a graphoepitaxy directed self-assembly process as a via patterning technology into integrated circuit fabrication is seriously considered for the 7-nm node and beyond. At these dimensions, a graphoepitaxy process using a cylindrical block copolymer that enables hole multiplication can alleviate costs by extending 193-nm immersion-based lithography and significantly reducing the number of masks that would be required per layer. To be considered for implementation, it needs to be proved that this approach can achieve the required pattern quality in terms of defects and variability using a representative, aperiodic design. The patterning of a via layer from an actual 7-nm node logic layout is demonstrated using immersion lithography and graphoepitaxy directed self-assembly in a fab-like environment. The performance of the process is characterized in detail on a full 300-mm wafer scale. The local variability in an edge placement error of the obtained patterns (4.0 nm 3σ for singlets) is in line with the recent results in the field and significantly less than of the prepattern (4.9 nm 3σ for singlets). In addition, it is expected that pattern quality can be further improved through an improved mask design and optical proximity correction. No major complications for insertion of the graphoepitaxy directed self-assembly into device manufacturing were observed.

Drawing lithography for microneedles: a review of fundamentals and biomedical applications.

PubMed

Lee, Kwang; Jung, Hyungil

2012-10-01

A microneedle is a three-dimensional (3D) micromechanical structure and has been in the spotlight recently as a drug delivery system (DDS). Because a microneedle delivers the target drug after penetrating the skin barrier, the therapeutic effects of microneedles proceed from its 3D structural geometry. Various types of microneedles have been fabricated using subtractive micromanufacturing methods which are based on the inherently planar two-dimensional (2D) geometries. However, traditional subtractive processes are limited for flexible structural microneedles and makes functional biomedical applications for efficient drug delivery difficult. The authors of the present study propose drawing lithography as a unique additive process for the fabrication of a microneedle directly from 2D planar substrates, thus overcoming a subtractive process shortcoming. The present article provides the first overview of the principal drawing lithography technology: fundamentals and biomedical applications. The continuous drawing technique for an ultrahigh-aspect ratio (UHAR) hollow microneedle, stepwise controlled drawing technique for a dissolving microneedle, and drawing technique with antidromic isolation for a hybrid electro-microneedle (HEM) are reviewed, and efficient biomedical applications by drawing lithography-mediated microneedles as an innovative drug and gene delivery system are described. Drawing lithography herein can provide a great breakthrough in the development of materials science and biotechnology. Copyright © 2012 Elsevier Ltd. All rights reserved.

Investigation of pattern transfer to piezoelectric jetted polymer using roll-to-roll nanoimprint lithography

NASA Astrophysics Data System (ADS)

Menezes, Shannon John

Nanoimprint Lithography (NIL) has existed since the mid 1990s as a proven concept of creating micro- and nanostructures using direct mechanical pattern transfer. Initially seen as a viable option to replace conventional lithography methods, the lack of technology to support large-scale manufacturing using NIL has motivated researchers to explore the application of NIL to create a better, more cost-efficient process with the ability to integrate NIL into a mass manufacturing system. One such method is the roll-to-roll process, similar to that used in printing presses of newspapers and plastics. This thesis is an investigation to characterize polymer deposition using a piezoelectric jetting head and attempt to create micro- and nanostructures on the polymer using R2RNIL technique.

Fabrication of superconducting nanowire single-photon detectors by nonlinear femtosecond optical lithography

NASA Astrophysics Data System (ADS)

Minaev, N. V.; Tarkhov, M. A.; Dudova, D. S.; Timashev, P. S.; Chichkov, B. N.; Bagratashvili, V. N.

2018-02-01

This paper describes a new approach to the fabrication of superconducting nanowire single-photon detectors from ultrathin NbN films on SiO2 substrates. The technology is based on nonlinear femtosecond optical lithography and includes direct formation of the sensitive element of the detector (the meander) through femtosecond laser exposure of the polymethyl methacrylate resist at a wavelength of 525 nm and subsequent removal of NbN using plasma-chemical etching. The nonlinear femtosecond optical lithography method allows the formation of planar structures with a spatial resolution of ~50 nm. These structures were used to fabricate single-photon superconducting detectors with quantum efficiency no worse than 8% at a wavelength of 1310 nm and dark count rate of 10 s-1 at liquid helium temperature.

Quantitative evaluation of manufacturability and performance for ILT produced mask shapes using a single-objective function

NASA Astrophysics Data System (ADS)

Choi, Heon; Wang, Wei-long; Kallingal, Chidam

2015-03-01

The continuous scaling of semiconductor devices is quickly outpacing the resolution improvements of lithographic exposure tools and processes. This one-sided progression has pushed optical lithography to its limits, resulting in the use of well-known techniques such as Sub-Resolution Assist Features (SRAF's), Source-Mask Optimization (SMO), and double-patterning, to name a few. These techniques, belonging to a larger category of Resolution Enhancement Techniques (RET), have extended the resolution capabilities of optical lithography at the cost of increasing mask complexity, and therefore cost. One such technique, called Inverse Lithography Technique (ILT), has attracted much attention for its ability to produce the best possible theoretical mask design. ILT treats the mask design process as an inverse problem, where the known transformation from mask to wafer is carried out backwards using a rigorous mathematical approach. One practical problem in the application of ILT is the resulting contour-like mask shapes that must be "Manhattanized" (composed of straight edges and 90-deg corners) in order to produce a manufacturable mask. This conversion process inherently degrades the mask quality as it is a departure from the "optimal mask" represented by the continuously curved shapes produced by ILT. However, simpler masks composed of longer straight edges reduce the mask cost as it lowers the shot count and saves mask writing time during mask fabrication, resulting in a conflict between manufacturability and performance for ILT produced masks1,2. In this study, various commonly used metrics will be combined into an objective function to produce a single number to quantitatively measure a particular ILT solution's ability to balance mask manufacturability and RET performance. Several metrics that relate to mask manufacturing costs (i.e. mask vertex count, ILT computation runtime) are appropriately weighted against metrics that represent RET capability (i.e. process-variation band, edge-placement-error) in order to reflect the desired practical balance. This well-defined scoring system allows direct comparison of several masks with varying degrees of complexities. Using this method, ILT masks produced with increasing mask constraints will be compared, and it will be demonstrated that using the smallest minimum width for mask shapes does not always produce the optimal solution.

Directional photofluidization lithography: micro/nanostructural evolution by photofluidic motions of azobenzene materials.

PubMed

Lee, Seungwoo; Kang, Hong Suk; Park, Jung-Ki

2012-04-24

This review demonstrates directional photofluidization lithography (DPL), which makes it possible to fabricate a generic and sophisticated micro/nanoarchitecture that would be difficult or impossible to attain with other methods. In particular, DPL differs from many of the existing micro/nanofabrication methods in that the post-treatment (i.e., photofluidization), after the preliminary fabrication process of the original micro/nanostructures, plays a pivotal role in the various micro/nanostructural evolutions including the deterministic reshaping of architectures, the reduction of structural roughness, and the dramatic enhancement of pattern resolution. Also, DPL techniques are directly compatible with a parallel and scalable micro/nanofabrication. Thus, DPL with such extraordinary advantages in micro/nanofabrication could provide compelling opportunities for basic micro/nanoscale science as well as for general technology applications. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Fabrication of carbon quantum dots with nano-defined position and pattern in one step via sugar-electron-beam writing.

PubMed

Weng, Yuyan; Li, Zhiyun; Peng, Lun; Zhang, Weidong; Chen, Gaojian

2017-12-14

Quantum dots (QDs) are promising materials in nanophotonics, biological imaging, and even quantum computing. Precise positioning and patterning of QDs is a prerequisite for realizing their actual applications. Contrary to the traditional two discrete steps of fabricating and positioning QDs, herein, a novel sugar-electron-beam writing (SEW) method is reported for producing QDs via electron-beam lithography (EBL) that uses a carefully chosen synthetic resist, poly(2-(methacrylamido)glucopyranose) (PMAG). Carbon QDs (CQDs) could be fabricated in situ through electron beam exposure, and the nanoscale position and luminescence intensity of the produced CQDs could be precisely controlled without the assistance of any other fluorescent matter. We have demonstrated that upon combining an electron beam with a glycopolymer, in situ production of CQDs occurs at the electron beam spot center with nanoscale precision at any place and with any patterns, an advancement that we believe will stimulate innovations in future applications.

Triple/quadruple patterning layout decomposition via linear programming and iterative rounding

NASA Astrophysics Data System (ADS)

Lin, Yibo; Xu, Xiaoqing; Yu, Bei; Baldick, Ross; Pan, David Z.

2017-04-01

As the feature size of the semiconductor technology scales down to 10 nm and beyond, multiple patterning lithography (MPL) has become one of the most practical candidates for lithography, along with other emerging technologies, such as extreme ultraviolet lithography (EUVL), e-beam lithography (EBL), and directed self-assembly. Due to the delay of EUVL and EBL, triple and even quadruple patterning is considered to be used for lower metal and contact layers with tight pitches. In the process of MPL, layout decomposition is the key design stage, where a layout is split into various parts and each part is manufactured through a separate mask. For metal layers, stitching may be allowed to resolve conflicts, whereas it is forbidden for contact and via layers. We focus on the application of layout decomposition where stitching is not allowed, such as for contact and via layers. We propose a linear programming (LP) and iterative rounding solving technique to reduce the number of nonintegers in the LP relaxation problem. Experimental results show that the proposed algorithms can provide high quality decomposition solutions efficiently while introducing as few conflicts as possible.

Optimizing a synchrotron based x-ray lithography system for IC manufacturing

NASA Astrophysics Data System (ADS)

Kovacs, Stephen; Speiser, Kenneth; Thaw, Winston; Heese, Richard N.

1990-05-01

The electron storage ring is a realistic solution as a radiation source for production grade, industrial X-ray lithography system. Today several large scale plans are in motion to design and implement synchrotron storage rings of different types for this purpose in the USA and abroad. Most of the scientific and technological problems related to the physics, design and manufacturing engineering, and commissioning of these systems for microlithography have been resolved or are under extensive study. However, investigation on issues connected to application of Synchrotron Orbit Radiation (SOR ) in chip production environment has been somewhat neglected. In this paper we have filled this gap pointing out direct effects of some basic synchrotron design parameters and associated subsystems (injector, X-ray beam line) on the operation and cost of lithography in production. The following factors were considered: synchrotron configuration, injection energy, beam intensity variability, number of beam lines and wafer exposure concept. A cost model has been worked out and applied to three different X-ray Lithography Source (XLS) systems. The results of these applications are compared and conclusions drawn.

Two-photon reduction: a cost-effective method for fabrication of functional metallic nanostructures

NASA Astrophysics Data System (ADS)

Tabrizi, Sahar; Cao, YaoYu; Lin, Han; Jia, BaoHua

2017-03-01

Metallic nanostructures have underpinned plasmonic-based advanced photonic devices in a broad range of research fields over the last decade including physics, engineering, material science and bioscience. The key to realizing functional plasmonic resonances that can manipulate light at the optical frequencies relies on the creation of conductive metallic structures at the nanoscale with low structural defects. Currently, most plasmonic nanostructures are fabricated either by electron beam lithography (EBL) or by focused ion beam (FIB) milling, which are expensive, complicated and time-consuming. In comparison, the direct laser writing (DLW) technique has demonstrated its high spatial resolution and cost-effectiveness in three-dimensional fabrication of micro/nanostructures. Furthermore, the recent breakthroughs in superresolution nanofabrication and parallel writing have significantly advanced the fabrication resolution and throughput of the DLW method and made it one of the promising future nanofabrication technologies with low-cost and scalability. In this review, we provide a comprehensive summary of the state-of-the-art DLW fabrication technology for nanometer scale metallic structures. The fabrication mechanisms, different material choices, fabrication capability, including resolution, conductivity and structure surface smoothness, as well as the characterization methods and achievable devices for different applications are presented. In particular, the development trends of the field and the perspectives for future opportunities and challenges are provided at the end of the review. It has been demonstrated that the quality of the metallic structures fabricated using the DLW method is excellent compared with other methods providing a new and enabling platform for functional nanophotonic device fabrication.

Novel EUV photoresist for sub-7nm node (Conference Presentation)

NASA Astrophysics Data System (ADS)

Furukawa, Tsuyoshi; Naruoka, Takehiko; Nakagawa, Hisashi; Miyata, Hiromu; Shiratani, Motohiro; Hori, Masafumi; Dei, Satoshi; Ayothi, Ramakrishnan; Hishiro, Yoshi; Nagai, Tomoki

2017-04-01

Extreme ultraviolet (EUV) lithography has been recognized as a promising candidate for the manufacturing of semiconductor devices as LS and CH pattern for 7nm node and beyond. EUV lithography is ready for high volume manufacturing stage. For the high volume manufacturing of semiconductor devices, significant improvement of sensitivity and line edge roughness (LWR) and Local CD Uniformity (LCDU) is required for EUV resist. It is well-known that the key challenge for EUV resist is the simultaneous requirement of ultrahigh resolution (R), low line edge roughness (L) and high sensitivity (S). Especially high sensitivity and good roughness is important for EUV lithography high volume manufacturing. We are trying to improve sensitivity and LWR/LCDU from many directions. From material side, we found that both sensitivity and LWR/LCDU are simultaneously improved by controlling acid diffusion length and efficiency of acid generation using novel resin and PAG. And optimizing EUV integration is one of the good solution to improve sensitivity and LWR/LCDU. We are challenging to develop new multi-layer materials to improve sensitivity and LWR/LCDU. Our new multi-layer materials are designed for best performance in EUV lithography system. From process side, we found that sensitivity was substantially improved maintaining LWR applying novel type of chemical amplified resist (CAR) and process. EUV lithography evaluation results obtained for new CAR EUV interference lithography. And also metal containing resist is one possibility to break through sensitivity and LWR trade off. In this paper, we will report the recent progress of sensitivity and LWR/LCDU improvement of JSR novel EUV resist and process.

From Monochrome to Technicolor: Simple Generic Approaches to Multicomponent Protein Nanopatterning Using Siloxanes with Photoremovable Protein-Resistant Protecting Groups

DOE Office of Scientific and Technical Information (OSTI.GOV)

El Zubir, Osama; Xia, Sijing; Ducker, Robert E.

We show that sequential protein deposition is possible by photodeprotection of films formed from a tetraethylene-glycol functionalized nitrophenylethoxycarbonyl-protected aminopropyltriethoxysilane (NPEOC-APTES). Exposure to near-UV irradiation removes the protein-resistant protecting group, and allows protein adsorption onto the resulting aminated surface. The protein resistance was tested using proteins with fluorescent labels and microspectroscopy of two-component structures formed by micro- and nanopatterning and deposition of yellow and green fluorescent proteins (YFP/GFP). Nonspecific adsorption onto regions where the protecting group remained intact was negligible. Multiple component patterns were also formed by near-field methods. Because reading and writing can be decoupled in a near-field microscope, itmore » is possible to carry out sequential patterning steps at a single location involving different proteins. Up to four different proteins were formed into geometric patterns using near-field lithography. Interferometric lithography facilitates the organization of proteins over square cm areas. Two-component patterns consisting of 150 nm streptavidin dots formed within an orthogonal grid of bars of GFP at a period of ca. 500 nm could just be resolved by fluorescence microscopy.« less

From Monochrome to Technicolor: Simple Generic Approaches to Multicomponent Protein Nanopatterning Using Siloxanes with Photoremovable Protein-Resistant Protecting Groups

DOE PAGES

El Zubir, Osama; Xia, Sijing; Ducker, Robert E.; ...

2017-05-27

We show that sequential protein deposition is possible by photodeprotection of films formed from a tetraethylene-glycol functionalized nitrophenylethoxycarbonyl-protected aminopropyltriethoxysilane (NPEOC-APTES). Exposure to near-UV irradiation removes the protein-resistant protecting group, and allows protein adsorption onto the resulting aminated surface. The protein resistance was tested using proteins with fluorescent labels and microspectroscopy of two-component structures formed by micro- and nanopatterning and deposition of yellow and green fluorescent proteins (YFP/GFP). Nonspecific adsorption onto regions where the protecting group remained intact was negligible. Multiple component patterns were also formed by near-field methods. Because reading and writing can be decoupled in a near-field microscope, itmore » is possible to carry out sequential patterning steps at a single location involving different proteins. Up to four different proteins were formed into geometric patterns using near-field lithography. Interferometric lithography facilitates the organization of proteins over square cm areas. Two-component patterns consisting of 150 nm streptavidin dots formed within an orthogonal grid of bars of GFP at a period of ca. 500 nm could just be resolved by fluorescence microscopy.« less

Lithography exposure characteristics of poly(methyl methacrylate) (PMMA) for carbon, helium and hydrogen ions

NASA Astrophysics Data System (ADS)

Puttaraksa, Nitipon; Norarat, Rattanaporn; Laitinen, Mikko; Sajavaara, Timo; Singkarat, Somsorn; Whitlow, Harry J.

2012-02-01

Poly(methyl methacrylate) is a common polymer used as a lithographic resist for all forms of particle (photon, ion and electron) beam writing. Faithful lithographic reproduction requires that the exposure dose, Θ, lies in the window Θ0⩽Θ<Θ, where Θ0 and Θ represent the clearing and cross-linking onset doses, respectively. In this work we have used the programmable proximity aperture ion beam lithography systems in Chiang Mai and Jyväskylä to determine the exposure characteristics in terms of fluence for 2 MeV protons, 3 MeV 4He and 6 MeV 12C ions, respectively. After exposure the samples were developed in 7:3 by volume propan-2-ol:de-ionised water mixture. At low fluences, where the fluence is below the clearing fluence, the exposed regions were characterised by rough regions, particularly for He with holes around the ion tracks. As the fluence (dose) increases so that the dose exceeds the clearing dose, the PMMA is uniformly removed with sharp vertical walls. When Θ exceeds the cross-linking onset fluence, the bottom of the exposed regions show undissolved PMMA.

Exploring EUV and SAQP pattering schemes at 5nm technology node

NASA Astrophysics Data System (ADS)

Hamed Fatehy, Ahmed; Kotb, Rehab; Lafferty, Neal; Jiang, Fan; Word, James

2018-03-01

For years, Moore's law keeps driving the semiconductors industry towards smaller dimensions and higher density chips with more devices. Earlier, the correlation between exposure source's wave length and the smallest resolvable dimension, mandated the usage of Deep Ultra-Violent (DUV) optical lithography system which has been used for decades to sustain Moore's law, especially when immersion lithography was introduced with 193nm ArF laser sources. As dimensions of devices get smaller beyond Deep Ultra-Violent (DUV) optical resolution limits, the need for Extremely Ultra-Violent (EUV) optical lithography systems was a must. However, EUV systems were still under development at that time for the mass-production in semiconductors industry. Theretofore, Multi-Patterning (MP) technologies was introduced to swirl about DUV optical lithography limitations in advanced nodes beyond minimum dimension (CD) of 20nm. MP can be classified into two main categories; the first one is to split the target itself across multiple masks that give the original target patterns when they are printed. This category includes Double, Triple and Quadruple patterning (DP, TP, and QP). The second category is the Self-Aligned Patterning (SAP) where the target is divided into Mandrel patterns and non-Mandrel patterns. The Mandrel patterns get printed first, then a self-aligned sidewalls are grown around these printed patterns drawing the other non-Mandrel targets, afterword, a cut mask(s) is used to define target's line-ends. This approach contains Self-Aligned-Double Pattering (SADP) and Self-Aligned- Quadruple-Pattering (SAQP). DUV and MP along together paved the way for the industry down to 7nm. However, with the start of development at the 5nm node and the readiness of EUV, the differentiation question is aroused again, which pattering approach should be selected, direct printing using EUV or DUV with MP, or a hybrid flow that contains both DUV-MP and EUV. In this work we are comparing two potential pattering techniques for Back End Of Line (BEOL) metal layers in the 5nm technology node, the first technique is Single Exposure EUV (SE-EUV) with a Direct Patterning EUV lithography process, and the second one is Self-Aligned Quadruple Patterning (SAQP) with a hybrid lithography processes, where the drawn metal target layer is decomposed into a Mandrel mask and Blocks/Cut mask, Mandrel mask is printed using DUV 193i lithography process, while Block/Cut Mask is printed using SE-EUV lithography process. The pros and cons of each technique are quantified based on Edge-Placement-Error (EPE) and Process Variation Band (PVBand) measured at 1D and 2D edges. The layout used in this comparison is a candidate layout for Foundries 5nm process node.

Nanostructures and functional materials fabricated by interferometric lithography.

PubMed

Xia, Deying; Ku, Zahyun; Lee, S C; Brueck, S R J

2011-01-11

Interferometric lithography (IL) is a powerful technique for the definition of large-area, nanometer-scale, periodically patterned structures. Patterns are recorded in a light-sensitive medium, such as a photoresist, that responds nonlinearly to the intensity distribution associated with the interference of two or more coherent beams of light. The photoresist patterns produced with IL are a platform for further fabrication of nanostructures and growth of functional materials and are building blocks for devices. This article provides a brief review of IL technologies and focuses on various applications for nanostructures and functional materials based on IL including directed self-assembly of colloidal nanoparticles, nanophotonics, semiconductor materials growth, and nanofluidic devices. Perspectives on future directions for IL and emerging applications in other fields are presented.

Expressive/Exploratory Technical Writing (XTW) in Engineering: Shifting the Technical Writing Curriculum

ERIC Educational Resources Information Center

Warnock, Scott; Kahn, Michael

2007-01-01

While the importance of "expressive writing," or informal, self-directed writing, has been well established, teachers underutilize it, particularly in technical writing courses. We introduce the term expressive/exploratory technical writing (XTW), which is the use of informal, self-directed writing to problem-solve in technical fields. We describe…

Background and survey of bioreplication techniques.

PubMed

Pulsifer, Drew Patrick; Lakhtakia, Akhlesh

2011-09-01

Bioreplication is the direct reproduction of a biological structure in order to realize at least one specific functionality. Current bioreplication techniques include the sol-gel technique, atomic layer deposition, physical vapor deposition, and imprint lithography and casting. The combined use of a focused ion beam and a scanning electron microscope could develop into a bioreplication technique as well. Some of these techniques are more suitable for reproducing surface features, others for bulk three-dimensional structures. Industrial upscaling appears possible only for imprint lithography and casting (which can be replaced by stamping).

Controlling the Localization of Liquid Droplets in Polymer Matrices by Evaporative Lithography.

PubMed

Zhao, Huaixia; Xu, Jiajia; Jing, Guangyin; Prieto-López, Lizbeth Ofelia; Deng, Xu; Cui, Jiaxi

2016-08-26

Localized inclusions of liquids provide solid materials with many functions, such as self-healing, secretion, and tunable mechanical properties, in a spatially controlled mode. However, a strategy to control the distribution of liquid droplets in solid matrices directly obtained from a homogeneous solution has not been reported thus far. Herein, we describe an approach to selectively localize liquid droplets in a supramolecular gel directly obtained from its solution by using evaporative lithography. In this process, the formation of droplet-embedded domains occurs in regions of free evaporation where the non-volatile liquid is concentrated and undergoes a phase separation to create liquid droplets prior to gelation, while a homogeneous gel matrix is formed in the regions of hindered evaporation. The different regions of a coating with droplet embedment patterns display different secretion abilities, enabling the control of the directional movement of water droplets. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Write! Write! Write! Ready-to-Use Writing Process Activities for Grades 4-8.

ERIC Educational Resources Information Center

Behrman, Carol H.

This handbook contains over 265 reproducible writing process activities that help make writing fun for students in grades 4-8. The handbook provides stimulating activities to give students the directed practice they need to learn to write clearly and competently. Designed for minimal teacher input, activities are complete with directions geared to…

Cracking-assisted fabrication of nanoscale patterns for micro/nanotechnological applications

NASA Astrophysics Data System (ADS)

Kim, Minseok; Kim, Dong-Joo; Ha, Dogyeong; Kim, Taesung

2016-05-01

Cracks are frequently observed in daily life, but they are rarely welcome and are considered as a material failure mode. Interestingly, cracks cause critical problems in various micro/nanofabrication processes such as colloidal assembly, thin film deposition, and even standard photolithography because they are hard to avoid or control. However, increasing attention has been given recently to control and use cracks as a facile, low-cost strategy for producing highly ordered nanopatterns. Specifically, cracking is the breakage of molecular bonds and occurs simultaneously over a large area, enabling fabrication of nanoscale patterns at both high resolution and high throughput, which are difficult to obtain simultaneously using conventional nanofabrication techniques. In this review, we discuss various cracking-assisted nanofabrication techniques, referred to as crack lithography, and summarize the fabrication principles, procedures, and characteristics of the crack patterns such as their position, direction, and dimensions. First, we categorize crack lithography techniques into three technical development levels according to the directional freedom of the crack patterns: randomly oriented, unidirectional, or multidirectional. Then, we describe a wide range of novel practical devices fabricated by crack lithography, including bioassay platforms, nanofluidic devices, nanowire sensors, and even biomimetic mechanosensors.

Directed Block Copolymer Assembly versus Electron Beam Lithography for Bit-Patterned Media with Areal Density of 1 Terabit/inch(2) and Beyond.

PubMed

Yang, Xiaomin; Wan, Lei; Xiao, Shuaigang; Xu, Yuan; Weller, Dieter K

2009-07-28

The directed self-assembly of block copolymer (BCP) offers a new route to perfect nanolithographic patterning at sub-50 nm length scale with molecular scale precision. We have explored the feasibility of using the BCP approach versus the conventional electron beam (e-beam) lithography to create highly dense dot patterns for bit-patterned media (BPM) applications. Cylinder-forming poly(styrene-b-methyl methacrylate) (PS-b-PMMA) directly self-assembled on a chemically prepatterned substrate. The nearly perfect hexagonal arrays of perpendicularly oriented cylindrical pores at a density of approximately 1 Terabit per square inch (Tb/in.(2)) are achieved over an arbitrarily large area. Considerable gains in the BCP process are observed relative to the conventional e-beam lithography in terms of the dot size variation, the placement accuracy, the pattern uniformity, and the exposure latitude. The maximum dimensional latitude in the cylinder-forming BCP patterns and the maximum skew angle that the BCP can tolerate have been investigated for the first time. The dimensional latitude restricts the formation of more than one lattice configuration in certain ranges. More defects in BCP patterns are observed when using low molecular weight BCP materials or on non-hexagonal prepatterns due to the dimensional latitude restriction. Finally, the limitations and challenges in the BCP approach that are associated with BPM applications will be briefly discussed.

Ultralow dose effects in ion-beam induced grafting of polymethylmethacrylate (PMMA)

NASA Astrophysics Data System (ADS)

Corelli, J. C.; Steckl, A. J.; Pulver, D.; Randall, J. N.

We have investigated the process of image enhancement in high resolution lithography through polymer grafting techniques. Sensitivity gains of 10 3-10 4 were obtained for H +, X-ray, e-beam and deep-UV irradiations. Ultralow dose effects in 60 keV H + irradiated PMMA have been observed through the use of the acrylic acid (AA) monomer grafting with irradiated PMMA. At conventional doses of 10 10 cm -2 an inner structure of each feature is revealed. At doses of (1-2) X 10 9 cm -2, discrete events within the exposed regions are observable. This is the first time that individual events have been observable in a lithography process and sets the upper limit in the useful sensitivity of the resist and ion lithography process. This effect is directly observable only with ions, because of their higher efficiency per particle than either photons or electrons.

Verification of E-Beam direct write integration into 28nm BEOL SRAM technology

NASA Astrophysics Data System (ADS)

Hohle, Christoph; Choi, Kang-Hoon; Gutsch, Manuela; Hanisch, Norbert; Seidel, Robert; Steidel, Katja; Thrun, Xaver; Werner, Thomas

2015-03-01

Electron beam direct write lithography (EBDW) potentially offers advantages for low-volume semiconductor manufacturing, rapid prototyping or design verification due to its high flexibility without the need of costly masks. However, the integration of this advanced patterning technology into complex CMOS manufacturing processes remains challenging. The low throughput of today's single e-Beam tools limits high volume manufacturing applications and maturity of parallel (multi) beam systems is still insufficient [1,2]. Additional concerns like transistor or material damage of underlying layers during exposure at high electron density or acceleration voltage have to be addressed for advanced technology nodes. In the past we successfully proved that potential degradation effects of high-k materials or ULK shrink can be neglected and were excluded by demonstrating integrated electrical results of 28nm node transistor and BEOL performance following 50kV electron beam dry exposure [3]. Here we will give an update on the integration of EBDW in the 300mm CMOS manufacturing processes of advanced integrated circuits at the 28nm SRAM node of GLOBALFOUNDRIES Dresden. The work is an update to what has been previously published [4]. E-beam patterning results of BEOL full chip metal and via layers with a dual damascene integration scheme using a 50kV VISTEC SB3050DW variable shaped electron beam direct writer at Fraunhofer IPMSCNT are demonstrated. For the patterning of the Metal layer a Mix & Match concept based on the sequence litho - etch -litho -etch (LELE) was developed and evaluated wherein several exposure fields were blanked out during the optical exposure. Etch results are shown and compared to the POR. Results are also shown on overlay performance and optimized e-Beam exposure time using most advanced data prep solutions and resist processes. The patterning results have been verified using fully integrated electrical measurement of metal lines and vias on wafer level. In summary we demonstrate the integration capability of EBDW into a productive CMOS process flow at the example of the 28nm SRAM technology node.

Engineered ZnO nanowire arrays using different nanopatterning techniques

NASA Astrophysics Data System (ADS)

Volk, János; Szabó, Zoltán; Erdélyi, Róbert; Khánh, Nguyen Q.

2012-02-01

The impact of various masking patterns and template layers on the wet chemically grown vertical ZnO nanowire arrays was investigated. The nanowires/nanorods were seeded at nucleation windows which were patterned in a mask layer using various techniques such as electron beam lithography, nanosphere photolithography, and atomic force microscope type nanolithography. The compared ZnO templates included single crystals, epitaxial layer, and textured polycrystalline films. Scanning electron microscopy revealed that the alignment and crystal orientation of the nanowires were dictated by the underlying seed layer, while their geometry can be tuned by the parameters of the certain nanopatterning technique and of the wet chemical process. The comparison of the alternative nanolithography techniques showed that using direct writing methods the diameter of the ordered ZnO nanowires can be as low as 30-40 nm at a density of 100- 1000 NW/μm2 in a very limited area (10 μm2-1 mm2). Nanosphere photolithography assisted growth, on the other hand, favors thicker nanopillars (~400 nm) and enables large-area, low-cost patterning (1-100 cm2). These alternative lowtemperature fabrication routes can be used for different novel optoelectronic devices, such as nanorod based ultraviolet photodiode, light emitting device, and waveguide laser.

Laser direct writing of micro- and nano-scale medical devices

PubMed Central

Gittard, Shaun D; Narayan, Roger J

2010-01-01

Laser-based direct writing of materials has undergone significant development in recent years. The ability to modify a variety of materials at small length scales and using short production times provides laser direct writing with unique capabilities for fabrication of medical devices. In many laser-based rapid prototyping methods, microscale and submicroscale structuring of materials is controlled by computer-generated models. Various laser-based direct write methods, including selective laser sintering/melting, laser machining, matrix-assisted pulsed-laser evaporation direct write, stereolithography and two-photon polymerization, are described. Their use in fabrication of microstructured and nanostructured medical devices is discussed. Laser direct writing may be used for processing a wide variety of advanced medical devices, including patient-specific prostheses, drug delivery devices, biosensors, stents and tissue-engineering scaffolds. PMID:20420557

Sidewall patterning—a new wafer-scale method for accurate patterning of vertical silicon structures

NASA Astrophysics Data System (ADS)

Westerik, P. J.; Vijselaar, W. J. C.; Berenschot, J. W.; Tas, N. R.; Huskens, J.; Gardeniers, J. G. E.

2018-01-01

For the definition of wafer scale micro- and nanostructures, in-plane geometry is usually controlled by optical lithography. However, options for precisely patterning structures in the out-of-plane direction are much more limited. In this paper we present a versatile self-aligned technique that allows for reproducible sub-micrometer resolution local modification along vertical silicon sidewalls. Instead of optical lithography, this method makes smart use of inclined ion beam etching to selectively etch the top parts of structures, and controlled retraction of a conformal layer to define a hard mask in the vertical direction. The top, bottom or middle part of a structure could be selectively exposed, and it was shown that these exposed regions can, for example, be selectively covered with a catalyst, doped, or structured further.

Triple/quadruple patterning layout decomposition via novel linear programming and iterative rounding

NASA Astrophysics Data System (ADS)

Lin, Yibo; Xu, Xiaoqing; Yu, Bei; Baldick, Ross; Pan, David Z.

2016-03-01

As feature size of the semiconductor technology scales down to 10nm and beyond, multiple patterning lithography (MPL) has become one of the most practical candidates for lithography, along with other emerging technologies such as extreme ultraviolet lithography (EUVL), e-beam lithography (EBL) and directed self assembly (DSA). Due to the delay of EUVL and EBL, triple and even quadruple patterning are considered to be used for lower metal and contact layers with tight pitches. In the process of MPL, layout decomposition is the key design stage, where a layout is split into various parts and each part is manufactured through a separate mask. For metal layers, stitching may be allowed to resolve conflicts, while it is forbidden for contact and via layers. In this paper, we focus on the application of layout decomposition where stitching is not allowed such as for contact and via layers. We propose a linear programming and iterative rounding (LPIR) solving technique to reduce the number of non-integers in the LP relaxation problem. Experimental results show that the proposed algorithms can provide high quality decomposition solutions efficiently while introducing as few conflicts as possible.

Task factor usability ratings for different age groups writing Chinese.

PubMed

Chan, A H S; So, J C Y

2009-11-01

This study evaluated how different task factors affect performance and user subjective preferences for three different age groups of Chinese subjects (6-11, 20-23, 65-70 years) when hand writing Chinese characters. The subjects copied Chinese character sentences with different settings for the task factors of writing plane angle (horizontal 0 degrees , slanted 15 degrees ), writing direction (horizontal, vertical), and line spacing (5 mm, 7 mm and no lines). Writing speed was measured and subjective preferences (effectiveness and satisfaction) were assessed for each of the task factor settings. The result showed that there was a conflict between writing speed and personal preference for the line spacing factor; 5 mm line spacing increased writing speed but it was the least preferred. It was also found that: vertical and horizontal writing directions and a slanted work surface suited school-aged children; a horizontal work surface and horizontal writing direction suited university students; and a horizontal writing direction with either a horizontal or slanted work surface suited the older adults.

Techniques for Type I Collagen Organization

NASA Astrophysics Data System (ADS)

Anderson-Jackson, LaTecia Diamond

Tissue Engineering is a process in which cells, engineering, and material methods are used in amalgamation to improve biological functions. The purpose of tissue engineering is to develop alternative solutions to treat or cure tissues and organs that have been severely altered or damaged by diseases, congenital defects, trauma, or cancer. One of the most common and most promising biological materials for tissue engineering to develop scaffolds is Type I collagen. A major challenge in biomedical research is aligning Type I collagen to mimic biological structures, such as ligaments, tendons, bones, and other hierarchal aligned structures within the human body. The intent of this research is to examine possible techniques for organizing Type I collagen and to assess which of the techniques is effective for potential biological applications. The techniques used in this research to organize collagen are soft lithography with solution-assisted sonication embossing, directional freezing, and direct poling. The final concentration used for both soft lithography with solution-assisted sonication embossing and direct poling was 1 mg/ml, whereas for directional freezing the final concentration varied between 4mg/ml, 2mg/ml, and 1 mg/ml. These techniques were characterized using the Atomic Force Microscope (AFM) and Helium Ion Microscope (HIM). In this study, we have found that out of the three techniques, the soft lithography and directional freezing techniques have been successful in organizing collagen in a particular pattern, but not alignment. We concluded alignment may be dependent on the pH of collagen and the amount of acetic acid used in collagen solution. However, experiments are still being conducted to optimize all three techniques to align collagen in a unidirectional arrangement.

Electrochemical electron beam lithography: Write, read, and erase metallic nanocrystals on demand

PubMed Central

Park, Jeung Hun; Steingart, Daniel A.; Kodambaka, Suneel; Ross, Frances M.

2017-01-01

We develop a solution-based nanoscale patterning technique for site-specific deposition and dissolution of metallic nanocrystals. Nanocrystals are grown at desired locations by electron beam–induced reduction of metal ions in solution, with the ions supplied by dissolution of a nearby electrode via an applied potential. The nanocrystals can be “erased” by choice of beam conditions and regrown repeatably. We demonstrate these processes via in situ transmission electron microscopy using Au as the model material and extend to other metals. We anticipate that this approach can be used to deposit multicomponent alloys and core-shell nanostructures with nanoscale spatial and compositional resolutions for a variety of possible applications. PMID:28706992

Materials Design for Block Copolymer Lithography

NASA Astrophysics Data System (ADS)

Sweat, Daniel Patrick

Block copolymers (BCPs) have attracted a great deal of scientific and technological interest due to their ability to spontaneously self-assemble into dense periodic nanostructures with a typical length scale of 5 to 50 nm. The use of self-assembled BCP thin-films as templates to form nanopatterns over large-area is referred to as BCP lithography. Directed self-assembly of BCPs is now viewed as a viable candidate for sub-20 nm lithography by the semiconductor industry. However, there are multiple aspects of assembly and materials design that need to be addressed in order for BCP lithography to be successful. These include substrate modification with polymer brushes or mats, tailoring of the block copolymer chemistry, understanding thin-film assembly and developing epitaxial like methods to control long range alignment. The rational design, synthesis and self-assembly of block copolymers with large interaction parameters (chi) is described in the first part of this dissertation. Two main blocks were chosen for introducing polarity into the BCP system, namely poly(4-hydroxystyrene) and poly(2-vinylpyridine). Each of these blocks are capable of ligating Lewis acids which can increase the etch contrast between the blocks allowing for facile pattern transfer to the underlying substrate. These BCPs were synthesized by living anionic polymerization and showed excellent control over molecular weight and dispersity, providing access to sub 5-nm domain sizes. Polymer brushes consist of a polymer chain with one end tethered to the surface and have wide applicability in tuning surface energy, forming responsive surfaces and increasing biocompatibility. In the second part of the dissertation, we present a universal method to grow dense polymer brushes on a wide range of substrates and combine this chemistry with BCP assembly to fabricate nanopatterned polymer brushes. This is the first demonstration of introducing additional functionality into a BCP directing layer and opens up a wide slew of applications from directed self-assembly to biomaterial engineering.

Photodetector based on carbon nanotubes

NASA Astrophysics Data System (ADS)

Pavlov, A.; Kitsyuk, E.; Ryazanov, R.; Timoshenkov, V.; Adamov, Y.

2015-09-01

Photodetector based on carbon nanotubes (CNT) was investigated. Sensors were done on quartz and silicon susbtrate. Samples of photodetectors sensors were produced by planar technology. This technology included deposition of first metal layer (Al), lithography for pads formation, etching, and formation of local catalyst area by inverse lithography. Vertically-aligned multi-wall carbon nanotubes were directly synthesized on substrate by PECVD method. I-V analysis and spectrum sensitivity of photodetector were investigated for 0.4 μm - 1.2 μm wavelength. Resistivity of CNT layers over temperature was detected in the range of -20°C to 100°C.

Model-based MPC enables curvilinear ILT using either VSB or multi-beam mask writers

NASA Astrophysics Data System (ADS)

Pang, Linyong; Takatsukasa, Yutetsu; Hara, Daisuke; Pomerantsev, Michael; Su, Bo; Fujimura, Aki

2017-07-01

Inverse Lithography Technology (ILT) is becoming the choice for Optical Proximity Correction (OPC) of advanced technology nodes in IC design and production. Multi-beam mask writers promise significant mask writing time reduction for complex ILT style masks. Before multi-beam mask writers become the main stream working tools in mask production, VSB writers will continue to be the tool of choice to write both curvilinear ILT and Manhattanized ILT masks. To enable VSB mask writers for complex ILT style masks, model-based mask process correction (MB-MPC) is required to do the following: 1). Make reasonable corrections for complex edges for those features that exhibit relatively large deviations from both curvilinear ILT and Manhattanized ILT designs. 2). Control and manage both Edge Placement Errors (EPE) and shot count. 3. Assist in easing the migration to future multi-beam mask writer and serve as an effective backup solution during the transition. In this paper, a solution meeting all those requirements, MB-MPC with GPU acceleration, will be presented. One model calibration per process allows accurate correction regardless of the target mask writer.

Development of procedures for programmable proximity aperture lithography

NASA Astrophysics Data System (ADS)

Whitlow, H. J.; Gorelick, S.; Puttaraksa, N.; Napari, M.; Hokkanen, M. J.; Norarat, R.

2013-07-01

Programmable proximity aperture lithography (PPAL) with MeV ions has been used in Jyväskylä and Chiang Mai universities for a number of years. Here we describe a number of innovations and procedures that have been incorporated into the LabView-based software. The basic operation involves the coordination of the beam blanker and five motor-actuated translators with high accuracy, close to the minimum step size with proper anti-collision algorithms. By using special approaches, such writing calibration patterns, linearisation of position and careful backlash correction the absolute accuracy of the aperture size and position, can be improved beyond the standard afforded by the repeatability of the translator end-point switches. Another area of consideration has been the fluence control procedures. These involve control of the uniformity of the beam where different approaches for fluence measurement such as simultaneous aperture current and the ion current passing through the aperture using a Faraday cup are used. Microfluidic patterns may contain many elements that make-up mixing sections, reaction chambers, separation columns and fluid reservoirs. To facilitate conception and planning we have implemented a .svg file interpreter, that allows the use of scalable vector graphics files produced by standard drawing software for generation of patterns made up of rectangular elements.

Grayscale lithography-automated mask generation for complex three-dimensional topography

NASA Astrophysics Data System (ADS)

Loomis, James; Ratnayake, Dilan; McKenna, Curtis; Walsh, Kevin M.

2016-01-01

Grayscale lithography is a relatively underutilized technique that enables fabrication of three-dimensional (3-D) microstructures in photosensitive polymers (photoresists). By spatially modulating ultraviolet (UV) dosage during the writing process, one can vary the depth at which photoresist is developed. This means complex structures and bioinspired designs can readily be produced that would otherwise be cost prohibitive or too time intensive to fabricate. The main barrier to widespread grayscale implementation, however, stems from the laborious generation of mask files required to create complex surface topography. We present a process and associated software utility for automatically generating grayscale mask files from 3-D models created within industry-standard computer-aided design (CAD) suites. By shifting the microelectromechanical systems (MEMS) design onus to commonly used CAD programs ideal for complex surfacing, engineering professionals already familiar with traditional 3-D CAD software can readily utilize their pre-existing skills to make valuable contributions to the MEMS community. Our conversion process is demonstrated by prototyping several samples on a laser pattern generator-capital equipment already in use in many foundries. Finally, an empirical calibration technique is shown that compensates for nonlinear relationships between UV exposure intensity and photoresist development depth as well as a thermal reflow technique to help smooth microstructure surfaces.

Development of template and mask replication using jet and flash imprint lithography

NASA Astrophysics Data System (ADS)

Brooks, Cynthia; Selinidis, Kosta; Doyle, Gary; Brown, Laura; LaBrake, Dwayne; Resnick, Douglas J.; Sreenivasan, S. V.

2010-09-01

The Jet and Flash Imprint Lithography (J-FILTM)1-7 process uses drop dispensing of UV curable resists to assist high resolution patterning for subsequent dry etch pattern transfer. The technology is actively being used to develop solutions for memory markets including Flash memory and patterned media for hard disk drives. It is anticipated that the lifetime of a single template (for patterned media) or mask (for semiconductor) will be on the order of 104 - 105 imprints. This suggests that tens of thousands of templates/masks will be required. It is not feasible to employ electronbeam patterning directly to deliver these volumes. Instead, a "master" template - created by directly patterning with an electron-beam tool - will be replicated many times with an imprint lithography tool to produce the required supply of "working" templates/masks. In this paper, we review the development of the pattern transfer process for both template and mask replicas. Pattern transfer of resolutions down to 25nm has been demonstrated for bit patterned media replication. In addition, final resolution on a semiconductor mask of 28nm has been confirmed. The early results on both etch depth and CD uniformity are promising, but more extensive work is required to characterize the pattern transfer process.

Mirror writing in pre-school children: a pilot study.

PubMed

Cubelli, Roberto; Della Sala, Sergio

2009-05-01

Mirror writing refers to the production of individual letters, whole words or sentences in reverse direction. Unintentional mirror writing has been observed in young children learning to write and interpreted as the manifestation of different cognitive impairments. We report on mirror writing instances in a sample of 108 pre-school children. Results showed MW to be age-related but independent from handedness and left-right discrimination abilities. We propose an account of mirror writing as reflecting dissociation between acquired motor programmes for letter shape composition and unspecified spatial direction of hand movements. Before learning to write, the child's directional cognitive system is assumed to be dichotomous, thus inducing the production of randomly oriented asymmetrical letters.

Challenges of anamorphic high-NA lithography and mask making

NASA Astrophysics Data System (ADS)

Hsu, Stephen D.; Liu, Jingjing

2017-06-01

Chip makers are actively working on the adoption of 0.33 numerical aperture (NA) EUV scanners for the 7-nm and 5-nm nodes (B. Turko, S. L. Carson, A. Lio, T. Liang, M. Phillips, et al., in `Proc. SPIE9776, Extreme Ultraviolet (EUV) Lithography VII', vol. 977602 (2016) doi: 10.1117/12.2225014; A. Lio, in `Proc. SPIE9776, Extreme Ultraviolet (EUV) Lithography VII', vol. 97760V (2016) doi: 10.1117/12.2225017). In the meantime, leading foundries and integrated device manufacturers are starting to investigate patterning options beyond the 5-nm node (O. Wood, S. Raghunathan, P. Mangat, V. Philipsen, V. Luong, et al., in `Proc. SPIE. 9422, Extreme Ultraviolet (EUV) Lithography VI', vol. 94220I (2015) doi: 10.1117/12.2085022). To minimize the cost and process complexity of multiple patterning beyond the 5-nm node, EUV high-NA single-exposure patterning is a preferred method over EUV double patterning (O. Wood, S. Raghunathan, P. Mangat, V. Philipsen, V. Luong, et al., in `Proc. SPIE. 9422, Extreme Ultraviolet (EUV) Lithography VI', vol. 94220I (2015) doi: 10.1117/12.2085022; J. van Schoot, K. van Ingen Schenau, G. Bottiglieri, K. Troost, J. Zimmerman, et al., `Proc. SPIE. 9776, Extreme Ultraviolet (EUV) Lithography VII', vol. 97761I (2016) doi: 10.1117/12.2220150). The EUV high-NA scanner equipped with a projection lens of 0.55 NA is designed to support resolutions below 10 nm. The high-NA system is beneficial for enhancing resolution, minimizing mask proximity correction bias, improving normalized image log slope (NILS), and controlling CD uniformity (CDU). However, increasing NA from 0.33 to 0.55 reduces the depth of focus (DOF) significantly. Therefore, the source mask optimization (SMO) with sub-resolution assist features (SRAFs) are needed to increase DOF to meet the demanding full chip process control requirements (S. Hsu, R. Howell, J. Jia, H.-Y. Liu, K. Gronlund, et al., EUV `Proc. SPIE9048, Extreme Ultraviolet (EUV) Lithography VI', (2015) doi: 10.1117/12.2086074). To ensure no assist feature printing, the assist feature sizes need to be scaled with λ/NA. The extremely small SRAF width (below 25 nm on the reticle) is difficult to fabricate across the full reticle. In this paper, we introduce an innovative `attenuated SRAF' to improve SRAF manufacturability and still maintain the process window benefit. A new mask fabrication process is proposed to use existing mask-making capability to manufacture the attenuated SRAFs. The high-NA EUV system utilizes anamorphic reduction; 4× in the horizontal (slit) direction and 8× in the vertical (scanning) direction (J. van Schoot, K. van Ingen Schenau, G. Bottiglieri, K. Troost, J. Zimmerman, et al., `Proc. SPIE. 9776, Extreme Ultraviolet (EUV) Lithography VII', vol. 97761I (2016) doi: 10.1117/12.2220150; B. Kneer, S. Migura, W. Kaiser, J. T. Neumann, J. van Schoot, in `Proc. SPIE9422, Extreme Ultraviolet (EUV) Lithography VI', vol. 94221G (2015) doi: 10.1117/12.2175488). For an anamorphic system, the magnification has an angular dependency, and thus, familiar mask specifications such as mask error factor (MEF) need to be redefined. Similarly, mask-manufacturing rule check (MRC) needs to consider feature orientation.

Directed Nanopatterning with Nonlinear Laser Lithography

NASA Astrophysics Data System (ADS)

Tokel, Onur; Yavuz, Ozgun; Ergecen, Emre; Pavlov, Ihor; Makey, Ghaith; Ilday, Fatih Omer

In spite of the successes of maskless optical nanopatterning methods, it remains extremely challenging to create any isotropic, periodic nanopattern. Further, available optical techniques lack the long-range coverage and high periodicity demanded by photonics and photovoltaics applications. Here, we provide a novel solution with Nonlinear Laser Lithography (NLL) approach. Notably, we demonstrate that self-organized nanopatterns can be produced in all possible Bravais lattice types. Further, we show that carefully chosen defects or structued noise can direct NLL symmetries. Exploitation of directed self-organizatio to select or guide to predetermined symmetries is a new capability. Predictive capabilities for such far-from-equilibrium, dissipative systems is very limited due to a lack of experimental systems with predictive models. Here we also present a completely predictive model, and experimentally confirm that the emergence of motifs can be regulated by engineering defects, while the polarization of the ultrafast laser prescribes lattice symmetry, which in turn reinforces translational invariance. Thus, NLL enables a novel, maskless nanofabrication approach, where laser-induced nanopatterns can be rapidly created in any lattice symmetry

Soft Nanoimprint Lithography for Direct Printing of Crystalline Metal Oxide Nanostructures

NASA Astrophysics Data System (ADS)

Kothari, Rohit; Beaulieu, Michael; Watkins, James

2015-03-01

We demonstrate a solution-based soft nanoimprint lithography technique to directly print dimensionally-stable crystalline metal oxide nanostructures. A patterned PDMS stamp is used in combination with a UV/thermal cure step to imprint a resist containing high concentrations of crystalline nanoparticles in an inorganic/organic binder phase. The as-imprinted nanostructures are highly crystalline and therefore undergo little shrinkage (less than 5% in some cases) upon thermal annealing. High aspect ratio nanostructures and sub-100 nm features are easily realized. Residual layer free direct imprinting (no etching) was achieved by choosing the resist with the appropriate surface energy to ensure dewetting at stamp-substrate interface. The technique was further extended to stack the nanostructures by deploying a layer-by-layer imprint strategy. The method is scalable and can produce large area device quality nanostructures in a rapid fashion at a low cost. CeO2, ITO and TiO2 nanopatterns are illustrated for their potential use in fuel cell electrodes, solar cell electrodes and photonic devices, respectively.

Porosity characteristics of ultra-low dielectric insulator films directly patterned by nano-imprint lithography

NASA Astrophysics Data System (ADS)

Ro, Hyun Wook; Jones, Ronald L.; Peng, Huagen; Lee, Hae-Jeong; Lin, Eric K.; Karim, Alamgir; Yoon, Do Y.; Gidley, David W.; Soles, Christopher L.

2008-03-01

Direct patterning of low-dielectric constant (low-k) materials via nanoimprint lithography (NIL) has the potential to simplify fabrication processes and significantly reduce the manufacturing costs for semiconductor devices. We report direct imprinting of sub-100 nm features into a high modulus methylsilsesquioxane-based organosilicate glass (OSG) material. An excellent fidelity of the pattern transfer process is quantified with nm precision using critical dimension small angle X-ray scattering (CD-SAXS) and specular X-ray reflectivity (SXR). X-ray porosimetry (XRP) and positron annihilation lifetime spectroscopy (PALS) measurements indicate that imprinting increases the inherent microporosity of the methylsilsequioxane-based OSG material. When a porogen (pore generating material) is added, imprinting decreases the population of mesopores associated with the porogen while retaining the enhanced microporosity. The net effect is a decrease the pore interconnectivity. There is also evidence for a sealing effect that is interpreted as an imprint induced dense skin at the surface of the porous pattern.

Development of nanostencil lithography and its applications for plasmonics and vibrational biospectroscopy

NASA Astrophysics Data System (ADS)

Aksu, Serap

Development of low cost nanolithography tools for precisely creating a variety of nanostructure shapes and arrangements in a high-throughput fashion is crucial for next generation biophotonic technologies. Although existing lithography techniques offer tremendous design flexibility, they have major drawbacks such as low-throughput and fabrication complexity. In addition the demand for the systematic fabrication of sub-100 nm structures on flexible, stretchable, non-planar nanoelectronic/photonic systems and multi-functional materials has fueled the research for innovative fabrication methods in recent years. This thesis research investigates a novel lithography approach for fabrication of engineered plasmonic nanostructures and metamaterials operating at visible and infrared wavelengths. The technique is called Nanostencil Lithography (NSL) and relies on direct deposition of materials through nanoapertures on a stencil. NSL enables high throughput fabrication of engineered antenna arrays with optical qualities similar to the ones fabricated by standard electron beam lithography. Moreover, nanostencils can be reused multiple times to fabricate series of plasmonic nanoantenna arrays with identical optical responses enabling high throughput manufacturing. Using nanostencils, very precise nanostructures could be fabricated with 10 nm accuracy. Furthermore, this technique has flexibility and resolution to create complex plasmonic nanostructure arrays on the substrates that are difficult to work with e-beam and ion beam lithography tools. Combining plasmonics with polymeric materials, biocompatible surfaces or curvilinear and non-planar objects enable unique optical applications since they can preserve normal device operation under large strain. In this work, mechanically tunable flexible optical materials and spectroscopy probes integrated on fiber surfaces that could be used for a wide range of applications are demonstrated. Finally, the first application of NSL fabricated low cost infrared nanoantenna arrays for plasmonically enhanced vibrational biospectroscopy is presented. Detection of immunologically important protein monolayers with thickness as small as 3 nm, and antibody assays are demonstrated using nanoantenna arrays fabricated with reusable nanostencils. The results presented indicate that nanostencil lithography is a promising method for reducing the nano manufacturing cost while enhancing the performance of biospectroscopy tools for biology and medicine. As a single step and low cost nanofabrication technique, NSL could facilitate the manufacturing of biophotonic technologies for real-world applications.

How directional change in reading/writing habits relates to directional change in displayed pictures.

PubMed

Lee, Hachoung; Oh, Songjoo

2016-01-01

It has been suggested that reading/writing habits may influence the appreciation of pictures. For example, people who read and write in a rightward direction have an aesthetic preference for pictures that face rightward over pictures that face leftward, and vice versa. However, correlations for this phenomenon have only been found in cross-cultural studies. Will a directional change in reading/writing habits within a culture relate to changes in picture preference? Korea is a good place to research this question because the country underwent gradual changes in reading/writing direction habits, from leftward to rightward, during the 20th century. In this study, we analyzed the direction of drawings and photos published in the two oldest newspapers in Korea from 1920-2013. The results show that the direction of the drawings underwent a clear shift from the left to the right, but the direction of the photos did not change. This finding suggests a close psychological link between the habits of reading/writing and drawing that cannot be accounted for simply by an accidental correspondence across different cultures.

Results from a new 193nm die-to-database reticle inspection platform

NASA Astrophysics Data System (ADS)

Broadbent, William H.; Alles, David S.; Giusti, Michael T.; Kvamme, Damon F.; Shi, Rui-fang; Sousa, Weston L.; Walsh, Robert; Xiong, Yalin

2010-05-01

A new 193nm wavelength high resolution reticle defect inspection platform has been developed for both die-to-database and die-to-die inspection modes. In its initial configuration, this innovative platform has been designed to meet the reticle qualification requirements of the IC industry for the 22nm logic and 3xhp memory generations (and shrinks) with planned extensions to the next generation. The 22nm/3xhp IC generation includes advanced 193nm optical lithography using conventional RET, advanced computational lithography, and double patterning. Further, EUV pilot line lithography is beginning. This advanced 193nm inspection platform has world-class performance and the capability to meet these diverse needs in optical and EUV lithography. The architecture of the new 193nm inspection platform is described. Die-to-database inspection results are shown on a variety of reticles from industry sources; these reticles include standard programmed defect test reticles, as well as advanced optical and EUV product and product-like reticles. Results show high sensitivity and low false and nuisance detections on complex optical reticle designs and small feature size EUV reticles. A direct comparison with the existing industry standard 257nm wavelength inspection system shows measurable sensitivity improvement for small feature sizes

Biocompatibility of hydroxyapatite scaffolds processed by lithography-based additive manufacturing.

PubMed

Tesavibul, Passakorn; Chantaweroad, Surapol; Laohaprapanon, Apinya; Channasanon, Somruethai; Uppanan, Paweena; Tanodekaew, Siriporn; Chalermkarnnon, Prasert; Sitthiseripratip, Kriskrai

2015-01-01

The fabrication of hydroxyapatite scaffolds for bone tissue engineering applications by using lithography-based additive manufacturing techniques has been introduced due to the abilities to control porous structures with suitable resolutions. In this research, the use of hydroxyapatite cellular structures, which are processed by lithography-based additive manufacturing machine, as a bone tissue engineering scaffold was investigated. The utilization of digital light processing system for additive manufacturing machine in laboratory scale was performed in order to fabricate the hydroxyapatite scaffold, of which biocompatibilities were eventually evaluated by direct contact and cell-culturing tests. In addition, the density and compressive strength of the scaffolds were also characterized. The results show that the hydroxyapatite scaffold at 77% of porosity with 91% of theoretical density and 0.36 MPa of the compressive strength are able to be processed. In comparison with a conventionally sintered hydroxyapatite, the scaffold did not present any cytotoxic signs while the viability of cells at 95.1% was reported. After 14 days of cell-culturing tests, the scaffold was able to be attached by pre-osteoblasts (MC3T3-E1) leading to cell proliferation and differentiation. The hydroxyapatite scaffold for bone tissue engineering was able to be processed by the lithography-based additive manufacturing machine while the biocompatibilities were also confirmed.

3D nanofabrication inside rapid prototyped microfluidic channels showcased by wet-spinning of single micrometre fibres.

PubMed

Lölsberg, Jonas; Linkhorst, John; Cinar, Arne; Jans, Alexander; Kuehne, Alexander J C; Wessling, Matthias

2018-05-01

Microfluidics is an established multidisciplinary research domain with widespread applications in the fields of medicine, biotechnology and engineering. Conventional production methods of microfluidic chips have been limited to planar structures, preventing the exploitation of truly three-dimensional architectures for applications such as multi-phase droplet preparation or wet-phase fibre spinning. Here the challenge of nanofabrication inside a microfluidic chip is tackled for the showcase of a spider-inspired spinneret. Multiphoton lithography, an additive manufacturing method, was used to produce free-form microfluidic masters, subsequently replicated by soft lithography. Into the resulting microfluidic device, a three-dimensional spider-inspired spinneret was directly fabricated in-chip via multiphoton lithography. Applying this unprecedented fabrication strategy, the to date smallest printed spinneret nozzle is produced. This spinneret resides tightly sealed, connecting it to the macroscopic world. Its functionality is demonstrated by wet-spinning of single-digit micron fibres through a polyacrylonitrile coagulation process induced by a water sheath layer. The methodology developed here demonstrates fabrication strategies to interface complex architectures into classical microfluidic platforms. Using multiphoton lithography for in-chip fabrication adopts a high spatial resolution technology for improving geometry and thus flow control inside microfluidic chips. The showcased fabrication methodology is generic and will be applicable to multiple challenges in fluid control and beyond.

Rapid fabrication of embossing tools for the production of polymeric microfluidic devices for bioanalytical applications

NASA Astrophysics Data System (ADS)

Ford, Sean M.; McCandless, Andrew B.; Liu, Xuezhu; Soper, Steven A.

2001-09-01

In this paper we present embossing tools that were fabricated using both UV and X-ray lithography. The embossing tools created were used to emboss microfluidic channels for bioanalytical applications. Specifically, two tools were fabricated. One, using x-ray lithography, was fabricated for electrophoretic separations of DNA restriction fragment analysis. A second tool, fabricated using SU8, was designed for micro PCR applications. Depths of both tools were approximately 100 micrometers . Both tools were made by directly electroforming nickel on a stainless steel base. Fabrication time for the tool fabricated using x-ray lithography was less than 1 week, and largely depended on the availability of the x-ray source. The SU8 embossing tool was fabricated in less than 24 hours. The resulting nickel electroforms from both processes were extremely robust and did not fail under embossing conditions required for PMMA and/or polycarbonate. Some problems removing SU8 after electroforming were sen for smaller size gaps between nickel structures.

Fabrication of hydrophobic structures on coronary stent surface based on direct three-beam laser interference lithography

NASA Astrophysics Data System (ADS)

Gao, Long-yue; Zhou, Wei-qi; Wang, Yuan-bo; Wang, Si-qi; Bai, Chong; Li, Shi-ming; Liu, Bin; Wang, Jun-nan; Cui, Cheng-kun; Li, Yong-liang

2016-05-01

To solve the problems with coronary stent implantation, coronary artery stent surface was directly modified by three-beam laser interference lithography through imitating the water-repellent surface of lotus leaf, and uniform micro-nano structures with the controllable period were fabricated. The morphological properties and contact angle (CA) of the microstructure were measured by scanning electron microscope (SEM) and CA system. The water repellency of stent was also evaluated by the contact and then separation between the water drop and the stent. The results show that the close-packed concave structure with the period of about 12 μm can be fabricated on the stent surface with special parameters (incident angle of 3°, laser energy density of 2.2 J·cm-2 and exposure time of 80 s) by using the three-beam laser at 1 064 nm, and the structure has good water repellency with CA of 120°.

Distortion of 3D SU8 photonic structures fabricated by four-beam holographic lithography withumbrella configuration.

PubMed

Zhu, Xuelian; Xu, Yongan; Yang, Shu

2007-12-10

We present a quantitative study of the distortion from a threeterm diamond-like structure fabricated in SU8 polymer by four-beam holographic lithography. In the study of the refraction effect, theory suggests that the lattice in SU8 should be elongated in the [111] direction but have no distortion in the (111) plane, and each triangular-like hole array in the (111) plane would rotate by ~30 degrees away from that in air. Our experiments agree with the prediction on the periodicity in the (111) plane and the rotation due to refraction effect, however, we find that the film shrinkage during lithographic process has nearly compensated the predicted elongation in the [111] direction. In study of photonic bandgap (PBG) properties of silicon photonic crystals templated by the SU8 structure, we find that the distortion has decreased quality of PBG.

Metal hierarchical patterning by direct nanoimprint lithography

PubMed Central

Radha, Boya; Lim, Su Hui; Saifullah, Mohammad S. M.; Kulkarni, Giridhar U.

2013-01-01

Three-dimensional hierarchical patterning of metals is of paramount importance in diverse fields involving photonics, controlling surface wettability and wearable electronics. Conventionally, this type of structuring is tedious and usually involves layer-by-layer lithographic patterning. Here, we describe a simple process of direct nanoimprint lithography using palladium benzylthiolate, a versatile metal-organic ink, which not only leads to the formation of hierarchical patterns but also is amenable to layer-by-layer stacking of the metal over large areas. The key to achieving such multi-faceted patterning is hysteretic melting of ink, enabling its shaping. It undergoes transformation to metallic palladium under gentle thermal conditions without affecting the integrity of the hierarchical patterns on micro- as well as nanoscale. A metallic rice leaf structure showing anisotropic wetting behavior and woodpile-like structures were thus fabricated. Furthermore, this method is extendable for transferring imprinted structures to a flexible substrate to make them robust enough to sustain numerous bending cycles. PMID:23446801

High dynamic grayscale lithography with an LED-based micro-image stepper

NASA Astrophysics Data System (ADS)

Eckstein, Hans-Christoph; Zeitner, Uwe D.; Leitel, Robert; Stumpf, Marko; Schleicher, Philipp; Bräuer, Andreas; Tünnermann, Andreas

2016-03-01

We developed a novel LED projection based direct write grayscale lithography system for the generation of optical surface profiles such as micro-lenses, diffractive elements, diffusors, and micro freeforms. The image formation is realized by a LCoS micro-display which is illuminated by a 405 nm UV High Power LED. The image on the display can be demagnified from factors 5x to 100x with an exchangeable lens. By controlling exposure time and LED power, the presented technique enables a highly dynamic dosage control for the exposure of h-line sensitive photo resist. In addition, the LCoS micro-display allows for an intensity control within the micro-image which is particularly advantageous to eliminate surface profile errors from stitching and limited homogeneity from LED illumination. Together with an accurate calibration of the resist response this leads to a superior low surface error of realized profiles below <0.2% RMS. The micro-display is mounted on a 3-axis (XYθ) stage for precise alignment. The substrate is brought into position with an air bearing stage which addresses an area of 500 × 500 mm2 with a positioning accuracy of <100 nm. As the exposure setup performs controlled motion in the z-direction the system to maintain the focal distance and lithographic patterning on non-planar surfaces to some extent. The exposure concept allows a high structure depth of more than 100 μm and a spatial resolution below 1 μm as well as the possibility of very steep sidewalls with angles larger than >80°. Another benefit of the approach is a patterning speed up to 100 cm2/h, which allows fabricating large-scale optics and microstructures in an acceptable time. We present the setup and show examples of micro-structures to demonstrate the performance of the system, namely a refractive freeform array, where the RMS surface deviation does not exceed 0.2% of the total structure depth of 75 μm. Furthermore, we show that this exposure tool is suitable to generate diffractive optical elements as well as freeform optics and arrays with a high aspect ratio and structure depth showing a superior optical performance. Lastly we demonstrate a multi-level diffraction grating on a curved substrate.

Resist characteristics with direct-write electron beam and SCALPEL exposure system

NASA Astrophysics Data System (ADS)

Sato, Mitsuru; Omori, Katsumi; Ishikawa, Kiyoshi; Nakayama, Toshimasa; Novembre, Anthony E.; Ocola, Leonidas E.

1999-06-01

High acceleration voltage electron beam exposure is one of the possible candidates for post-optical lithography. The use of electrons, instead of photons, avoids optical related problems such as the standing wave issues. However, resists must conform to certain needs for the SCALPEL system, such as exposure in a vacuum chamber with 100kv electron beams. Taking into account the challenging requirements of high resolution, high sensitivity, low bake dependency and no outgassing, TOK has been able to develop resists to meet most of the SCALPEL system needs. However, due to the nature of chemical amplification and the PEB dependency, as is the case with DUV resist which varies for different features, we must recommend different resist for multiple features such as dense lines, isolated lines and contact holes. TOK has designed an electron beam negative resist, EN-009, which demonstrate 100nm pattern resolution. The dose to print on the SCALPEL system is 5.0(mu) C/cm2. The electron beam positive resist, EP-004M, has been designed for line and space patterns. The dose to print on the SCALPEL system is 8.25(mu) C/cm2. The processing conditions are standard, using 0.26N developer. These are the lowest exposure energies reported to date for similar resolution on this exposure tools.

Fabrication of nanoporous membranes for tuning microbial interactions and biochemical reactions

DOE PAGES

Shankles, Peter G.; Timm, Andrea C.; Doktycz, Mitchel J.; ...

2015-10-21

Here we describe how new strategies for combining conventional photo- and soft- lithographic techniques with high-resolution patterning and etching strategies are needed in order to produce multi-scale fluidic platforms that address the full range of functional scales seen in complex biological and chemical systems. The smallest resolution required for an application often dictates the fabrication method used. Micromachining and micro-powder blasting yield higher throughput, but lack the resolution needed to fully address biological and chemical systems at the cellular and molecular scales. In contrast, techniques such as electron beam lithography or nanoimprinting allow nanoscale resolution, but are traditionally considered costlymore » and slow. Other techniques such as photolithography or soft lithography have characteristics between these extremes. Combining these techniques to fabricate multi-scale or hybrid fluidics allows fundamental biological and chemical questions can be answered. In this study, a combination of photolithography and electron beam lithography are used to produce two multi-scale fluidic devices that incorporate porous membranes into complex fluidic networks to control the flow of energy, information, and materials in chemical form. In the first device, materials and energy were used to support chemical reactions. A nanoporous membrane fabricated with e-beam lithography separates two parallel, serpentine channels. Photolithography was used to write microfluidic channels around the membrane. The pores were written at 150nm and reduced in size with silicon dioxide deposition from plasma enhanced chemical vapor deposition (PECVD) and atomic layer deposition (ALD). Using this method, the molecular weight cutoff (MWCO) of the membrane can be adapted to the system of interest. In the second approach, photolithography was used to fabricate 200nm thin pores. The pores confined microbes and allowed energy replenishment from a media perfusion channel. The same device can be used for study of intercellular communication via the secretion and uptake of signal molecules. Pore size was tested with 750nm fluorescent polystyrene beads and fluorescein dye. The 200nm PDMS pores were shown to be robust enough to hold 750nm beads while under pressure, but allow fluorescein to diffuse across the barrier. Further testing showed that extended culture of bacteria within the chambers was possible. Finally, these two examples show how lithographically defined porous membranes can be adapted to two unique situations and used to tune the flow of chemical energy, materials, and information within a microfluidic network.« less

Towards Terabit Memories

NASA Astrophysics Data System (ADS)

Hoefflinger, Bernd

Memories have been the major yardstick for the continuing validity of Moore's law. In single-transistor-per-Bit dynamic random-access memories (DRAM), the number of bits per chip pretty much gives us the number of transistors. For decades, DRAM's have offered the largest storage capacity per chip. However, DRAM does not scale any longer, both in density and voltage, severely limiting its power efficiency to 10 fJ/b. A differential DRAM would gain four-times in density and eight-times in energy. Static CMOS RAM (SRAM) with its six transistors/cell is gaining in reputation because it scales well in cell size and operating voltage so that its fundamental advantage of speed, non-destructive read-out and low-power standby could lead to just 2.5 electrons/bit in standby and to a dynamic power efficiency of 2aJ/b. With a projected 2020 density of 16 Gb/cm², the SRAM would be as dense as normal DRAM and vastly better in power efficiency, which would mean a major change in the architecture and market scenario for DRAM versus SRAM. Non-volatile Flash memory have seen two quantum jumps in density well beyond the roadmap: Multi-Bit storage per transistor and high-density TSV (through-silicon via) technology. The number of electrons required per Bit on the storage gate has been reduced since their first realization in 1996 by more than an order of magnitude to 400 electrons/Bit in 2010 for a complexity of 32Gbit per chip at the 32 nm node. Chip stacking of eight chips with TSV has produced a 32GByte solid-state drive (SSD). A stack of 32 chips with 2 b/cell at the 16 nm node will reach a density of 2.5 Terabit/cm². Non-volatile memory with a density of 10 × 10 nm²/Bit is the target for widespread development. Phase-change memory (PCM) and resistive memory (RRAM) lead in cell density, and they will reach 20 Gb/cm² in 2D and higher with 3D chip stacking. This is still almost an order-of-magnitude less than Flash. However, their read-out speed is ~10-times faster, with as yet little data on their energy/b. As a read-out memory with unparalleled retention and lifetime, the ROM with electron-beam direct-write-lithography (Chap. 8) should be considered for its projected 2D density of 250 Gb/cm², a very small read energy of 0.1 μW/Gb/s. The lithography write-speed 10 ms/Terabit makes this ROM a serious contentender for the optimum in non-volatile, tamper-proof storage.

Additive direct-write microfabrication for MEMS: A review

NASA Astrophysics Data System (ADS)

Teh, Kwok Siong

2017-12-01

Direct-write additive manufacturing refers to a rich and growing repertoire of well-established fabrication techniques that builds solid objects directly from computer- generated solid models without elaborate intermediate fabrication steps. At the macroscale, direct-write techniques such as stereolithography, selective laser sintering, fused deposition modeling ink-jet printing, and laminated object manufacturing have significantly reduced concept-to-product lead time, enabled complex geometries, and importantly, has led to the renaissance in fabrication known as the maker movement. The technological premises of all direct-write additive manufacturing are identical—converting computer generated three-dimensional models into layers of two-dimensional planes or slices, which are then reconstructed sequentially into threedimensional solid objects in a layer-by-layer format. The key differences between the various additive manufacturing techniques are the means of creating the finished layers and the ancillary processes that accompany them. While still at its infancy, direct-write additive manufacturing techniques at the microscale have the potential to significantly lower the barrier-of-entry—in terms of cost, time and training—for the prototyping and fabrication of MEMS parts that have larger dimensions, high aspect ratios, and complex shapes. In recent years, significant advancements in materials chemistry, laser technology, heat and fluid modeling, and control systems have enabled additive manufacturing to achieve higher resolutions at the micrometer and nanometer length scales to be a viable technology for MEMS fabrication. Compared to traditional MEMS processes that rely heavily on expensive equipment and time-consuming steps, direct-write additive manufacturing techniques allow for rapid design-to-prototype realization by limiting or circumventing the need for cleanrooms, photolithography and extensive training. With current direct-write additive manufacturing technologies, it is possible to fabricate unsophisticated micrometer scale structures at adequate resolutions and precisions using materials that range from polymers, metals, ceramics, to composites. In both academia and industry, direct-write additive manufacturing offers extraordinary promises to revolutionize research and development in microfabrication and MEMS technologies. Importantly, direct-write additive manufacturing could appreciably augment current MEMS fabrication technologies, enable faster design-to-product cycle, empower new paradigms in MEMS designs, and critically, encourage wider participation in MEMS research at institutions or for individuals with limited or no access to cleanroom facilities. This article aims to provide a limited review of the current landscape of direct-write additive manufacturing techniques that are potentially applicable for MEMS microfabrication.

Method for the fabrication of three-dimensional microstructures by deep X-ray lithography

DOEpatents

Sweatt, William C.; Christenson, Todd R.

2005-04-05

A method for the fabrication of three-dimensional microstructures by deep X-ray lithography (DXRL) comprises a masking process that uses a patterned mask with inclined mask holes and off-normal exposures with a DXRL beam aligned with the inclined mask holes. Microstructural features that are oriented in different directions can be obtained by using multiple off-normal exposures through additional mask holes having different orientations. Various methods can be used to block the non-aligned mask holes from the beam when using multiple exposures. A method for fabricating a precision 3D X-ray mask comprises forming an intermediate mask and a master mask on a common support membrane.

Fabrication and Characterization of Woodpile Structures for Direct Laser Acceleration

DOE Office of Scientific and Technical Information (OSTI.GOV)

McGuinness, C.; Colby, E.; England, R.J.

2010-08-26

An eight and nine layer three dimensional photonic crystal with a defect designed specifically for accelerator applications has been fabricated. The structures were fabricated using a combination of nanofabrication techniques, including low pressure chemical vapor deposition, optical lithography, and chemical mechanical polishing. Limits imposed by the optical lithography set the minimum feature size to 400 nm, corresponding to a structure with a bandgap centered at 4.26 {micro}m. Reflection spectroscopy reveal a peak in reflectivity about the predicted region, and good agreement with simulation is shown. The eight and nine layer structures will be aligned and bonded together to form themore » complete seventeen layer woodpile accelerator structure.« less

Single-photon-multi-layer-interference lithography for high-aspect-ratio and three-dimensional SU-8 micro-/nanostructures.

PubMed

Ghosh, Siddharth; Ananthasuresh, G K

2016-01-04

We report microstructures of SU-8 photo-sensitive polymer with high-aspect-ratio, which is defined as the ratio of height to in-plane feature size. The highest aspect ratio achieved in this work exceeds 250. A multi-layer and single-photon lithography approach is used in this work to expose SU-8 photoresist of thickness up to 100 μm. Here, multi-layer and time-lapsed writing is the key concept that enables nanometer localised controlled photo-induced polymerisation. We use a converging monochromatic laser beam of 405 nm wavelength with a controllable aperture. The reflection of the converging optics from the silicon substrate underneath is responsible for a trapezoidal edge profile of SU-8 microstructure. The reflection induced interfered point-spread-function and multi-layer-single-photon exposure helps to achieve sub-wavelength feature sizes. We obtained a 75 nm tip diameter on a pyramid shaped microstructure. The converging beam profile determines the number of multiple optical focal planes along the depth of field. These focal planes are scanned and exposed non-concurrently with varying energy dosage. It is notable that an un-automated height axis control is sufficient for this method. All of these contribute to realising super-high-aspect-ratio and 3D micro-/nanostructures using SU-8. Finally, we also address the critical problems of photoresist-based micro-/nanofabrication and their solutions.

Mask pattern generator employing EPL technology

NASA Astrophysics Data System (ADS)

Yoshioka, Nobuyuki; Yamabe, Masaki; Wakamiya, Wataru; Endo, Nobuhiro

2003-08-01

Mask cost is one of crucial issues in device fabrication, especially in SoC (System on a Chip) with small-volume production. The cost mainly depends on productivity of mask manufacturing tools such as mask writers and defect inspection tools. EPL (Electron Projection Lithography) has been developing as a high-throughput electron beam exposure technology that will succeed optical lithography. The application of EPL technology to mask writing will result in high productivity and contribute to decrease the mask cost. The concept of a mask pattern generator employing EPL technology is proposed in this paper. It is very similar to EPL technology used for pattern printing on a wafer. The mask patterns on the glass substrate are exposed by projecting the basic circuit patterns formed on the mother EPL mask. One example of the mother EPL mask is a stencil type made with 200-mm Si wafer. The basic circuit patterns are IP patterns and logical primitive patterns such as cell libraries (AND, OR, Inverter, Flip-Flop and etc.) to express the SoC device patterns. Since the SoC patterns are exposed with its collective units such as IP and logical primitive patterns by using this method, the high throughput will be expected comparing with conventional mask E-beam writers. In this paper, the mask pattern generator with the EPL technology is proposed. The concept, its advantages and issues to be solved are discussed.

Expanding the Developmental Models of Writing: A Direct and Indirect Effects Model of Developmental Writing (DIEW)

ERIC Educational Resources Information Center

Kim, Young-Suk Grace; Schatschneider, Christopher

2017-01-01

We investigated direct and indirect effects of component skills on writing (DIEW) using data from 193 children in Grade 1. In this model, working memory was hypothesized to be a foundational cognitive ability for language and cognitive skills as well as transcription skills, which, in turn, contribute to writing. Foundational oral language skills…

Multiple beam mask writers: an industry solution to the write time crisis

NASA Astrophysics Data System (ADS)

Litt, Lloyd C.

2010-09-01

The semiconductor industry is under constant pressure to reduce production costs even as technology complexity increases. Lithography represents the most expensive process due to its high capital equipment costs and the implementation of low-k1 lithographic processes, which has added to the complexity of making masks through the greater use of optical proximity correction, pixelated masks, and double or triple patterning. Each of these mask technologies allows the production of semiconductors at future nodes while extending the utility of current immersion tools. Low k1 patterning complexity combined with increased data due to smaller feature sizes is driving extremely long mask write times. While a majority of the industry is willing to accept mask write times of up to 24 hours, evidence suggests that the write times for many masks at the 22 nm node and beyond will be significantly longer. It has been estimated that $50M+ in non-recurring engineering (NRE) costs will be required to develop a multiple beam mask writer system, yet the business case to recover this kind of investment is not strong. Moreover, funding such a development is a high risk for an individual supplier. The problem is compounded by a disconnect between the tool customer (the mask supplier) and the final mask customer that will bear the increased costs if a high speed writer is not available. Since no individual company will likely risk entering this market, some type of industry-wide funding model will be needed. Because SEMATECH's member companies strongly support a multiple beam technology for mask writers to reduce the write time and cost of 193 nm and EUV masks, SEMATECH plans to pursue an advanced mask writer program in 2011 and 2012. In 2010, efforts will focus on identifying a funding model to address the investment to develop such a technology.

Maskless Lithography and in situ Visualization of Conductivity of Graphene using Helium Ion Microscopy

DOE PAGES

Iberi, Vighter O.; Vlassiouk, Ivan V.; Zhang, X. -G.; ...

2015-07-07

The remarkable mechanical and electronic properties of graphene make it an ideal candidate for next generation nanoelectronics. With the recent development of commercial-level single-crystal graphene layers, the potential for manufacturing household graphene-based devices has improved, but significant challenges still remain with regards to patterning the graphene into devices. In the case of graphene supported on a substrate, traditional nanofabrication techniques such as e-beam lithography (EBL) are often used in fabricating graphene nanoribbons but the multi-step processes they require can result in contamination of the graphene with resists and solvents. In this letter, we report the utility of scanning helium ionmore » lithography for fabricating functional graphene nanoconductors that are supported directly on a silicon dioxide layer, and we measure the minimum feature size achievable due to limitations imposed by thermal fluctuations and ion scattering during the milling process. Further we demonstrate that ion beams, due to their positive charging nature, may be used to observe and test the conductivity of graphene-based nanoelectronic devices in situ.« less

High-Tc superconducting microbolometer for terahertz applications

NASA Astrophysics Data System (ADS)

Ulysse, C.; Gaugue, A.; Adam, A.; Kreisler, A. J.; Villégier, J.-C.; Thomassin, J.-L.

2002-05-01

Superconducting hot electron bolometer mixers are now a competitive alternative to Schottky diode mixers in the terahertz frequency range because of their ultra wideband (from millimeter waves to visible light), high conversion gain, and low intrinsic noise level. High Tc superconductor materials can be used to make hot electron bolometers and present some advantage in term of operating temperature and cooling. In this paper, we present first a model for the study of superconducting hot electron bolometers responsivity in direct detection mode, in order to establish a firm basis for the design of future THz mixers. Secondly, an original process to realize YBaCuO hot electron bolometer mixers will be described. Submicron YBaCuO superconducting structures are expitaxially sputter deposited on MgO substrates and patterned by using electron beam lithography in combination with optical lithography. Metal masks achieved by electron beam lithography are insuring a good bridge definition and protection during ion etching. Finally, detection experiments are being performed with a laser at 850 nm wavelength, in homodyne mode in order to prove the feasibility and potential performances of these devices.

Integration of plant viruses in electron beam lithography nanostructures.

PubMed

Alonso, Jose M; Ondarçuhu, Thierry; Bittner, Alexander M

2013-03-15

Tobacco mosaic virus (TMV) is the textbook example of a virus, and also of a self-assembling nanoscale structure. This tubular RNA/protein architecture has also found applications as biotemplate for the synthesis of nanomaterials such as wires, as tubes, or as nanoparticle assemblies. Although TMV is, being a biological structure, quite resilient to environmental conditions (temperature, chemicals), it cannot be processed in electron beam lithography (eBL) fabrication, which is the most important and most versatile method of nanoscale structuring. Here we present adjusted eBL-compatible processes that allow the incorporation of TMV in nanostructures made of positive and negative tone eBL resists. The key steps are covering TMV by polymer resists, which are only heated to 50 °C, and development (selective dissolution) in carefully selected organic solvents. We demonstrate the post-lithography biochemical functionality of TMV by selective immunocoating of the viral particles, and the use of immobilized TMV as direct immunosensor. Our modified eBL process should be applicable to incorporate a wide range of sensitive materials in nanofabrication schemes.

Imprint lithography template technology for bit patterned media (BPM)

NASA Astrophysics Data System (ADS)

Lille, J.; Patel, K.; Ruiz, R.; Wu, T.-W.; Gao, H.; Wan, Lei; Zeltzer, G.; Dobisz, E.; Albrecht, T. R.

2011-11-01

Bit patterned media (BPM) for magnetic recording has emerged as a promising technology to deliver thermally stable magnetic storage at densities beyond 1Tb/in2. Insertion of BPM into hard disk drives will require the introduction of nanoimprint lithography and other nanofabrication processes for the first time. In this work, we focus on nanoimprint and nanofabrication challenges that are being overcome in order to produce patterned media. Patterned media has created the need for new tools and processes, such as an advanced rotary e-beam lithography tool and block copolymer integration. The integration of block copolymer is through the use of a chemical contrast pattern on the substrate which guides the alignment of di-block copolymers. Most of the work on directed self assembly for patterned media applications has, until recently, concentrated on the formation of circular dot patterns in a hexagonal close packed lattice. However, interactions between the read head and media favor a bit aspect ratio (BAR) greater than one. This design constraint has motivated new approaches for using self-assembly to create suitable high-BAR master patterns and has implications for template fabrication.

Direct-Write Printing on Three-Dimensional Geometries for Miniaturized Detector and Electronic Assemblies

NASA Technical Reports Server (NTRS)

Paquette, Beth; Samuels, Margaret; Chen, Peng

2017-01-01

Direct-write printing techniques will enable new detector assemblies that were not previously possible with traditional assembly processes. Detector concepts were manufactured using this technology to validate repeatability. Additional detector applications and printed wires on a 3-dimensional magnetometer bobbin will be designed for print. This effort focuses on evaluating performance for direct-write manufacturing techniques on 3-dimensional surfaces. Direct-write manufacturing has the potential to reduce mass and volume for fabrication and assembly of advanced detector concepts by reducing trace widths down to 10 microns, printing on complex geometries, allowing new electronic concept production, and reduced production times of complex those electronics.

Planar techniques for fabricating X-ray diffraction gratings and zone plates

NASA Technical Reports Server (NTRS)

Smith, H. I.; Anderson, E. H.; Hawryluk, A. M.; Schattenburg, M. L.

1984-01-01

The state of current planar techniques in the fabrication of Fresnel zone plates and diffraction gratings is reviewed. Among the fabrication techniques described are multilayer resist techniques; scanning electron beam lithography; and holographic lithography. Consideration is also given to: X-ray lithography; ion beam lithography; and electroplating. SEM photographs of the undercut profiles obtained in a type AZ 135OB photoresistor by holographic lithography are provided.

The Impact of the Direct Teacher Feedback Strategy on the EFL Secondary Stage Students' Writing Performance

ERIC Educational Resources Information Center

Elashri, Ismail Ibrahim Elshirbini Abdel Fattah

2013-01-01

This study aimed at developing some writing skills for second year secondary stage students through the direct teacher feedback strategy. Hence, the problem of the study was stated in the following statement: "The students at Al Azhar secondary schools are not good at writing. As a result their writing skills are weak." They need to be…

Laser-based direct-write techniques for cell printing

PubMed Central

Schiele, Nathan R; Corr, David T; Huang, Yong; Raof, Nurazhani Abdul; Xie, Yubing; Chrisey, Douglas B

2016-01-01

Fabrication of cellular constructs with spatial control of cell location (±5 μm) is essential to the advancement of a wide range of applications including tissue engineering, stem cell and cancer research. Precise cell placement, especially of multiple cell types in co- or multi-cultures and in three dimensions, can enable research possibilities otherwise impossible, such as the cell-by-cell assembly of complex cellular constructs. Laser-based direct writing, a printing technique first utilized in electronics applications, has been adapted to transfer living cells and other biological materials (e.g., enzymes, proteins and bioceramics). Many different cell types have been printed using laser-based direct writing, and this technique offers significant improvements when compared to conventional cell patterning techniques. The predominance of work to date has not been in application of the technique, but rather focused on demonstrating the ability of direct writing to pattern living cells, in a spatially precise manner, while maintaining cellular viability. This paper reviews laser-based additive direct-write techniques for cell printing, and the various cell types successfully laser direct-written that have applications in tissue engineering, stem cell and cancer research are highlighted. A particular focus is paid to process dynamics modeling and process-induced cell injury during laser-based cell direct writing. PMID:20814088

Expanding the developmental models of writing: A direct and indirect effects model of developmental writing (DIEW)

PubMed Central

Kim, Young-Suk Grace; Schatschneider, Christopher

2016-01-01

We investigated direct and indirect effects of component skills on writing (DIEW) using data from 193 children in Grade 1. In this model, working memory was hypothesized to be a foundational cognitive ability for language and cognitive skills as well as transcription skills, which, in turn, contribute to writing. Foundational oral language skills (vocabulary and grammatical knowledge) and higher-order cognitive skills (inference and theory of mind) were hypothesized to be component skills of text generation (i.e., discourse-level oral language). Results from structural equation modeling largely supported a complete mediation model among four variations of the DIEW model. Discourse-level oral language, spelling, and handwriting fluency completely mediated the relations of higher-order cognitive skills, foundational oral language, and working memory to writing. Moreover, language and cognitive skills had both direct and indirect relations to discourse-level oral language. Total effects, including direct and indirect effects, were substantial for discourse-level oral language (.46), working memory (.43), and spelling (.37), followed by vocabulary (.19), handwriting (.17), theory of mind (.12), inference (.10), and grammatical knowledge (.10). The model explained approximately 67% of variance in writing quality. These results indicate that multiple language and cognitive skills make direct and indirect contributions, and it is important to consider both direct and indirect pathways of influences when considering skills that are important to writing. PMID:28260812

The role of research-article writing motivation and self-regulatory strategies in explaining research-article abstract writing ability.

PubMed

Lin, Ming-Chia; Cheng, Yuh-Show; Lin, Sieh-Hwa; Hsieh, Pei-Jung

2015-04-01

The purpose of the study was to investigate the effects of research-article writing motivation and use of self-regulatory writing strategies in explaining second language (L2) research-article abstract writing ability, alongside the L2 literacy effect. Four measures were administered: a L2 literacy test, a research abstract performance assessment, and inventories of writing motivation and strategy. Participants were L2 graduate students in Taiwan (N=185; M age=25.8 yr., SD=4.5, range=22-53). Results of structural equation modeling showed a direct effect of motivation on research-article writing ability, but no direct effect of strategy or indirect effect of motivation via strategy on research-article writing ability, with L2 literacy controlled. The findings suggest research-article writing instruction should address writing motivation, besides L2 literacy.

Direct Writing of Graphene-based Nanoelectronics via Atomic Force Microscopy

DTIC Science & Technology

2012-05-07

To) 07-05-2012 4. TITLE AND SUBTITLE 5a. CONTRACT NUMBER Direct Writing of Graphene -based Nanoelectronics via Atomic Force Microscopy 5b. GRANT...ABSTRACT This project employs direct writing with an atomic force microscope (AFM) to fabricate simple graphene -based electronic components like resistors...and transistors at nanometer-length scales. The goal is to explore their electrical properties for graphene -based electronics. Conducting

Fracture Toughness (KIC) of Lithography Based Manufactured Alumina Ceramic

NASA Astrophysics Data System (ADS)

Nindhia, T. G. T.; Schlacher, J.; Lube, T.

2018-04-01

Precision shaped ceramic components can be obtained by an emerging technique called Lithography based Ceramic Manufacturing (LCM). A green part is made from a slurry consisting of a ceramic powder in a photocurable binder with addition of dispersant and plasticizer. Components are built in a layer–by-layer way by exposing the desired cross- sections to light. The parts are subsequently sintered to their final density. It is a challenge to produce ceramic component with this method that yield the same mechanical properties in all direction. The fracture toughness (KIc) of of LCM-alumina (prepared at LITHOZ GmbH, Austria) was tested by using the Single-Edge-V-Notched Beam (SEVNB) method. Notches are made into prismatic bend-bars in all three direction X, Y and Z to recognize the value of fracture toughness of the material in all three directions. The microstructure was revealed with optical microscopy as well as Scanning Electron Microscopy (SEM). The results indicate that the fracture toughness in Y-direction has the highest value (3.10 MPam1/2) that is followed by the one in X-direction which is just a bit lower (2.90 MPam1/2). The Z-direction is found to have a similar fracture toughness (2.95 MPam1/2). This is supported by a homogeneous microstructure showing no hint of the layers used during production.

In situ fabricated 3D micro-lenses for photonic integrated circuits.

PubMed

Thomas, R; Li, J; Ladak, Sam; Barrow, D; Smowton, P M

2018-05-14

Aspheric astigmatic polymer micro-lenses were fabricated directly onto photonic integrated circuits using two-photon lithography. We observed a 12.6 dB improvement in the free space coupling efficiency between integrated ridge laser pairs with micro-lenses to those without.

Bio-inspired, sub-wavelength surface structures for ultra-broadband, omni-directional anti-reflection in the mid and far IR.

PubMed

Gonzalez, Federico Lora; Gordon, Michael J

2014-06-02

Quasi-ordered moth-eye arrays were fabricated in Si using a colloidal lithography method to achieve highly efficient, omni-directional transmission of mid and far infrared (IR) radiation. The effect of structure height and aspect ratio on transmittance and scattering was explored experimentally and modeled quantitatively using effective medium theory. The highest aspect ratio structures (AR = 9.4) achieved peak transmittance of 98%, with >85% transmission for λ = 7-30 μm. A detailed photon balance was constructed by measuring transmission, forward scattering, specular reflection and diffuse reflection to quantify optical losses due to near-field effects. In addition, angle-dependent transmission measurements showed that moth-eye structures provide superior anti-reflective properties compared to unstructured interfaces over a wide angular range (0-60° incidence). The colloidal lithography method presented here is scalable and substrate-independent, providing a general approach to realize moth-eye structures and anti-reflection in many IR-compatible material systems.

High precision locating control system based on VCM for Talbot lithography

NASA Astrophysics Data System (ADS)

Yao, Jingwei; Zhao, Lixin; Deng, Qian; Hu, Song

2016-10-01

Aiming at the high precision and efficiency requirements of Z-direction locating in Talbot lithography, a control system based on Voice Coil Motor (VCM) was designed. In this paper, we built a math model of VCM and its moving characteristic was analyzed. A double-closed loop control strategy including position loop and current loop were accomplished. The current loop was implemented by driver, in order to achieve the rapid follow of the system current. The position loop was completed by the digital signal processor (DSP) and the position feedback was achieved by high precision linear scales. Feed forward control and position feedback Proportion Integration Differentiation (PID) control were applied in order to compensate for dynamic lag and improve the response speed of the system. And the high precision and efficiency of the system were verified by simulation and experiments. The results demonstrated that the performance of Z-direction gantry was obviously improved, having high precision, quick responses, strong real-time and easily to expend for higher precision.

Virtual reality using guided imagery to create Kanji or Hiragana by computer graphics: I

NASA Astrophysics Data System (ADS)

Ishigame, Masaaki; Miura, Nozomu; Hosaka, Akiko

1997-04-01

We have been studying a kind of word-processor that is able to create Japanese characters, Kanji or Hiragana strings in the cursive style, using an electronic writing brush model. Int his paper, we describe in detail the operation characteristics of the electronic writing brush which we have proposed. We defined a touch shape pattern of the electronic writing brush as a form which is projected as a circle and a cone. The brush goes on certain points of the skeleton of the character figure which is given as skeleton data. The thickness of the line is determined by a diametric variable brush pressure. Our progressive action model can rotate the direction of the writing brush tip corresponding to the difference angle between the direction of brush tip and the direction of the brush movement, and also the softness of the writing brush to express the writing brush method called the side writing brush. The front side and back side of the writing brush can be expressed in a calligraphic drawing. With our technique we can draw characters in actual stroke order on a virtual computer plane as if they are written by an actual writing brush.

High-Throughput Nanofabrication of Infra-red and Chiral Metamaterials using Nanospherical-Lens Lithography

PubMed Central

Chang, Yun-Chorng; Lu, Sih-Chen; Chung, Hsin-Chan; Wang, Shih-Ming; Tsai, Tzung-Da; Guo, Tzung-Fang

2013-01-01

Various infra-red and planar chiral metamaterials were fabricated using the modified Nanospherical-Lens Lithography. By replacing the light source with a hand-held ultraviolet lamp, its asymmetric light emission pattern produces the elliptical-shaped photoresist holes after passing through the spheres. The long axis of the ellipse is parallel to the lamp direction. The fabricated ellipse arrays exhibit localized surface plasmon resonance in mid-infra-red and are ideal platforms for surface enhanced infra-red absorption (SEIRA). We also demonstrate a way to design and fabricate complicated patterns by tuning parameters in each exposure step. This method is both high-throughput and low-cost, which is a powerful tool for future infra-red metamaterials applications. PMID:24284941

3D Micropatterned Surface Inspired by Salvinia molesta via Direct Laser Lithography.

PubMed

Tricinci, Omar; Terencio, Tercio; Mazzolai, Barbara; Pugno, Nicola M; Greco, Francesco; Mattoli, Virgilio

2015-11-25

Biomimetic functional surfaces are attracting increasing attention for their relevant technological applications. Despite these efforts, inherent limitations of microfabrication techniques prevent the replication of complex hierarchical microstructures. Using a 3D laser lithography technique, we fabricated a 3D patterned surface bioinspired to Salvinia molesta leaves. The artificial hairs, with crownlike heads, were reproduced by scaling down (ca. 100 times smaller) the dimensions of natural features, so that microscale hairs with submicrometric resolution were attained. The micropatterned surface, in analogy with the natural model, shows interesting properties in terms of hydrophobicity and air retention when submerged by water, even if realized with a hydrophilic material. Furthermore, we successfully demonstrated the capability to promote localized condensation of water droplets from moisture in the atmosphere.

Fabrication of Tunnel Junctions For Direct Detector Arrays With Single-Electron Transistor Readout Using Electron-Beam Lithography

NASA Technical Reports Server (NTRS)

Stevenson, T. R.; Hsieh, W.-T.; Li, M. J.; Stahle, C. M.; Rhee, K. W.; Teufel, J.; Schoelkopf, R. J.

2002-01-01

This paper will describe the fabrication of small aluminum tunnel junctions for applications in astronomy. Antenna-coupled superconducting tunnel junctions with integrated single-electron transistor readout have the potential for photon-counting sensitivity at sub-millimeter wavelengths. The junctions for the detector and single-electron transistor can be made with electron-beam lithography and a standard self-aligned double-angle deposition process. However, high yield and uniformity of the junctions is required for large-format detector arrays. This paper will describe how measurement and modification of the sensitivity ratio in the resist bilayer was used to greatly improve the reliability of forming devices with uniform, sub-micron size, low-leakage junctions.

Creating Active Device Materials for Nanoelectronics Using Block Copolymer Lithography

PubMed Central

Morris, Michael A.

2017-01-01

The prolonged and aggressive nature of scaling to augment the performance of silicon integrated circuits (ICs) and the technical challenges and costs associated with this has led to the study of alternative materials that can use processing schemes analogous to semiconductor manufacturing. We examine the status of recent efforts to develop active device elements using nontraditional lithography in this article, with a specific focus on block copolymer (BCP) feature patterning. An elegant route is demonstrated using directed self-assembly (DSA) of BCPs for the fabrication of aligned tungsten trioxide (WO3) nanowires towards nanoelectronic device application. The strategy described avoids conventional lithography practices such as optical patterning as well as repeated etching and deposition protocols and opens up a new approach for device development. Nanoimprint lithography (NIL) silsesquioxane (SSQ)-based trenches were utilized in order to align a cylinder forming poly(styrene)-block-poly(4-vinylpyridine) (PS-b-P4VP) BCP soft template. We outline WO3 nanowire fabrication using a spin-on process and the symmetric current-voltage characteristics of the resulting Ti/Au (5 nm/45 nm) contacted WO3 nanowires. The results highlight the simplicity of a solution-based approach that allows creating active device elements and controlling the chemistry of specific self-assembling building blocks. The process enables one to dictate nanoscale chemistry with an unprecedented level of sophistication, forging the way for next-generation nanoelectronic devices. We lastly outline views and future research studies towards improving the current platform to achieve the desired device performance. PMID:28973987

State-of-the-art Nanofabrication in Catalysis.

PubMed

Karim, Waiz; Tschupp, Simon A; Herranz, Juan; Schmidt, Thomas J; Ekinci, Yasin; van Bokhovenac, Jeroen A

2017-04-26

We present recent developments in top-down nanofabrication that have found application in catalysis research. To unravel the complexity of catalytic systems, the design and use of models with control of size, morphology, shape and inter-particle distances is a necessity. The study of well-defined and ordered nanoparticles on a support contributes to the understanding of complex phenomena that govern reactions in heterogeneous and electro-catalysis. We review the strengths and limitations of different nanolithography methods such as electron beam lithography (EBL), photolithography, extreme ultraviolet (EUV) lithography and colloidal lithography for the creation of such highly tunable catalytic model systems and their applications in catalysis. Innovative strategies have enabled particle sizes reaching dimensions below 10 nm. It is now possible to create pairs of particles with distance controlled with an extremely high precision in the order of one nanometer. We discuss our approach to study these model systems at the single-particle level using X-ray absorption spectroscopy and show new ways to fabricate arrays of single nanoparticles or nanoparticles in pairs over a large area using EBL and EUV-achromatic Talbot lithography. These advancements have provided new insights into the active sites in metal catalysts and enhanced the understanding of the role of inter-particle interactions and catalyst supports, such as in the phenomenon of hydrogen spillover. We present a perspective on future directions for employing top-down nanofabrication in heterogeneous and electrocatalysis. The rapid development in nanofabrication and characterization methods will continue to have an impact on understanding of complex catalytic processes.

Creating Active Device Materials for Nanoelectronics Using Block Copolymer Lithography.

PubMed

Cummins, Cian; Bell, Alan P; Morris, Michael A

2017-09-30

The prolonged and aggressive nature of scaling to augment the performance of silicon integrated circuits (ICs) and the technical challenges and costs associated with this has led to the study of alternative materials that can use processing schemes analogous to semiconductor manufacturing. We examine the status of recent efforts to develop active device elements using nontraditional lithography in this article, with a specific focus on block copolymer (BCP) feature patterning. An elegant route is demonstrated using directed self-assembly (DSA) of BCPs for the fabrication of aligned tungsten trioxide (WO₃) nanowires towards nanoelectronic device application. The strategy described avoids conventional lithography practices such as optical patterning as well as repeated etching and deposition protocols and opens up a new approach for device development. Nanoimprint lithography (NIL) silsesquioxane (SSQ)-based trenches were utilized in order to align a cylinder forming poly(styrene)- block -poly(4-vinylpyridine) (PS- b -P4VP) BCP soft template. We outline WO₃ nanowire fabrication using a spin-on process and the symmetric current-voltage characteristics of the resulting Ti/Au (5 nm/45 nm) contacted WO₃ nanowires. The results highlight the simplicity of a solution-based approach that allows creating active device elements and controlling the chemistry of specific self-assembling building blocks. The process enables one to dictate nanoscale chemistry with an unprecedented level of sophistication, forging the way for next-generation nanoelectronic devices. We lastly outline views and future research studies towards improving the current platform to achieve the desired device performance.

48 CFR 2052.215-71 - Project officer authority.

Code of Federal Regulations, 2010 CFR

2010-10-01

... directive whatever. (d) All technical directions must be issued in writing by the project officer or must be... advise the contractor in writing that, in the contracting officer's opinion, the technical direction is... subject to the technical direction of the NRC project officer. The term technical direction is defined to...

Writing Instruction.

ERIC Educational Resources Information Center

Richgels, Donald J.

2003-01-01

Discusses four recent writing books: "Teaching to Write: Theory Into Practice" (Jane B. Hughey and Charlotte Slack); "The Writing Teacher's Handbook" (Jo Phenix); "Scaffolding Young Writers: A Writers' Workshop Approach" (Linda J. Dorn and Carla Soffos); and "Directing the Writing Workshop: An Elementary Teacher's Handbook" (Jean Wallace Gillet…

Using Literature-Based Prompts To Teach Writing Competencies: Directed Reading and Writing Lessons.

ERIC Educational Resources Information Center

Gelsinger, Barry D.

Intended to help teachers integrate writing instruction with the study of literature, this teaching guide offers a philosophy of writing instruction, describes a procedure for teaching reading and writing lessons, and provides a sequence of writing skills. For various literature selections, the guide defines vocabulary, provides topic discussion…

Direct etch method for microfludic channel and nanoheight post-fabrication by picoliter droplets

NASA Astrophysics Data System (ADS)

Demirci, Utkan; Toner, Mehmet

2006-01-01

Photolithography is an expensive and significant step in microfabrication. Approaches that could change lithography would create an impact on semiconductor industry and microelectromechanical systems technologies. We demonstrate a direct etching method by ejecting etchant droplets at desired locations by using microdroplet ejector arrays. This method could be used for easy fabrication of poly(dimethylsiloxane) microfluidic channels and nanometer height postlike structures in microfluidic channels.

Direct-laser metal writing of surface acoustic wave transducers for integrated-optic spatial light modulators in lithium niobate

NASA Astrophysics Data System (ADS)

Datta, Bianca C.; Savidis, Nickolaos; Moebius, Michael; Jolly, Sundeep; Mazur, Eric; Bove, V. Michael

2017-02-01

Recently, the fabrication of high-resolution silver nanostructures using a femtosecond laser-based direct write process in a gelatin matrix was reported. The application of direct metal writing towards feature development has also been explored with direct metal fusion, in which metal is fused onto the surface of the substrate via a femtosecond laser process. In this paper, we present a comparative study of gelatin matrix and metal fusion approaches for directly laser-written fabrication of surface acoustic wave transducers on a lithium niobate substrate for application in integrated optic spatial light modulators.

The Introduction and Early Use of Lithography in the United States.

ERIC Educational Resources Information Center

Barnhill, Georgia B.

This paper discusses the use of lithography in the United States in the early 1800s. Highlights include: the development of lithography in Germany between 1796 and 1798; early expectations for lithography; competition against the existing technology for the production of images--relief prints and copper-plate engravings; examples of 18th-century…

Data Compression for Maskless Lithography Systems: Architecture, Algorithms and Implementation

DTIC Science & Technology

2008-05-19

Data Compression for Maskless Lithography Systems: Architecture, Algorithms and Implementation Vito Dai Electrical Engineering and Computer Sciences...servers or to redistribute to lists, requires prior specific permission. Data Compression for Maskless Lithography Systems: Architecture, Algorithms and...for Maskless Lithography Systems: Architecture, Algorithms and Implementation Copyright 2008 by Vito Dai 1 Abstract Data Compression for Maskless

Directed assembly of colloidal particles for micro/nano photonics (Conference Presentation)

NASA Astrophysics Data System (ADS)

Zheng, Yuebing

2017-02-01

Bottom-up fabrication of complex structures with chemically synthesized colloidal particles as building blocks pave an efficient and cost-effective way towards micro/nano photonics with unprecedented functionality and tunability. Novel properties can arise from quantum effects of colloidal particles, as well as inter-particle interactions and spatial arrangement in particle assemblies. Herein, I discuss our recent developments and applications of three types of techniques for directed assembly of colloidal particles: moiré nanosphere lithography (MNSL), bubble-pen lithography (BPL), and optothermal tweezers (OTTs). Specifically, MNSL provides an efficient approach towards creating moiré metasurface with tunable and multiband optical responses from visible to mid-infrared regime. Au moiré metasurfaces have been applied for surface-enhanced infrared spectroscopy, optical capture and patterning of bacteria, and photothermal denaturation of proteins. BPL is developed to pattern a variety of colloidal particles on plasmonic substrates and two-dimensional atomic-layer materials in an arbitrary manner. The laser-directed microbubble captures and immobilizes nanoparticles through coordinated actions of Marangoni convection, surface tension, gas pressure, and substrate adhesion. OTTs are developed to create dynamic nanoparticle assemblies at low optical power. Such nanoparticle assemblies have been used for surface-enhanced Raman spectroscopy for molecular analysis in their native environments.

Extreme ultraviolet lithography machine

DOEpatents

Tichenor, Daniel A.; Kubiak, Glenn D.; Haney, Steven J.; Sweeney, Donald W.

2000-01-01

An extreme ultraviolet lithography (EUVL) machine or system for producing integrated circuit (IC) components, such as transistors, formed on a substrate. The EUVL machine utilizes a laser plasma point source directed via an optical arrangement onto a mask or reticle which is reflected by a multiple mirror system onto the substrate or target. The EUVL machine operates in the 10-14 nm wavelength soft x-ray photon. Basically the EUV machine includes an evacuated source chamber, an evacuated main or project chamber interconnected by a transport tube arrangement, wherein a laser beam is directed into a plasma generator which produces an illumination beam which is directed by optics from the source chamber through the connecting tube, into the projection chamber, and onto the reticle or mask, from which a patterned beam is reflected by optics in a projection optics (PO) box mounted in the main or projection chamber onto the substrate. In one embodiment of a EUVL machine, nine optical components are utilized, with four of the optical components located in the PO box. The main or projection chamber includes vibration isolators for the PO box and a vibration isolator mounting for the substrate, with the main or projection chamber being mounted on a support structure and being isolated.

48 CFR 1552.237-71 - Technical direction.

Code of Federal Regulations, 2010 CFR

2010-10-01

.... (d) Technical direction will be issued in writing or confirmed in writing within five (5) days after... 48 Federal Acquisition Regulations System 6 2010-10-01 2010-10-01 true Technical direction. 1552... Technical direction. As prescribed in 1537.110, insert a clause substantially the same as the following...

Effect of Direct Grammar Instruction on Student Writing Skills

ERIC Educational Resources Information Center

Robinson, Lisa; Feng, Jay

2016-01-01

Grammar Instruction has an important role to play in helping students to speak and write more effectively. The purpose of this study was to examine the effects of direct grammar instruction on the quality of student's writing skills. The participants in this study included 18 fifth grade students and two fifth grade teachers. Based on the results…

The Development of Composition Skills via Directed Writing.

ERIC Educational Resources Information Center

Rahilly, Leonard J.

To alleviate problems associated with free composition as a method of foreign language writing instruction, the directed writing method was adapted for use in a college French composition course. High-quality French texts, often of only a page or two and written by native speakers, are used as a basis for grammatical analysis and discussion and a…

Second Language Learners' Performance and Strategies When Writing Direct and Translated Essays

ERIC Educational Resources Information Center

Ismail, Sadiq Abdulwahed Ahmed; Alsheikh, Negmeldin Omer

2012-01-01

The purpose of this study was to investigate ESL students' performance and strategies when writing direct and translated essays. The study also aimed at exploring students' strategies when writing in L2 (English) and L1 (Arabic). The study used a mixture of quantitative and qualitative procedures for data collection and analysis. Adapted strategy…

The capability of lithography simulation based on MVM-SEM® system

NASA Astrophysics Data System (ADS)

Yoshikawa, Shingo; Fujii, Nobuaki; Kanno, Koichi; Imai, Hidemichi; Hayano, Katsuya; Miyashita, Hiroyuki; Shida, Soichi; Murakawa, Tsutomu; Kuribara, Masayuki; Matsumoto, Jun; Nakamura, Takayuki; Matsushita, Shohei; Hara, Daisuke; Pang, Linyong

2015-10-01

The 1Xnm technology node lithography is using SMO-ILT, NTD or more complex pattern. Therefore in mask defect inspection, defect verification becomes more difficult because many nuisance defects are detected in aggressive mask feature. One key Technology of mask manufacture is defect verification to use aerial image simulator or other printability simulation. AIMS™ Technology is excellent correlation for the wafer and standards tool for defect verification however it is difficult for verification over hundred numbers or more. We reported capability of defect verification based on lithography simulation with a SEM system that architecture and software is excellent correlation for simple line and space.[1] In this paper, we use a SEM system for the next generation combined with a lithography simulation tool for SMO-ILT, NTD and other complex pattern lithography. Furthermore we will use three dimension (3D) lithography simulation based on Multi Vision Metrology SEM system. Finally, we will confirm the performance of the 2D and 3D lithography simulation based on SEM system for a photomask verification.

Recent developments in the fabrication of ordered nanostructure arrays based on nanosphere lithography.

PubMed

Wei, Xueyong

2010-11-01

Since it was invented two decades ago, Nanosphere Lithography (NSL) has been widely studied as a low cost and flexible technique to fabricate nanostructures. Based on the registered patents and some selected papers, this review will discuss recent developments of different NSL strategies for the fabrication of ordered nanostructure arrays. The mechanism of self-assembly process and the techniques for preparing the self-assembled nanosphere template are first briefly introduced. The nanosphere templates are used either as shadow masks or as moulds for pattern transfer. Much more work now combines NSL with other lithographic techniques and material growth methods to form novel nanostructures of complex shape or various materials. Hence, this review finally gives a discussion on some future directions in NSL study.

Aluminum Nanowire Arrays via Soft Nanoimprint Lithography

NASA Astrophysics Data System (ADS)

Naughton, Michael J.; Nesbitt, Nathan T.; Merlo, Juan M.; Rose, Aaron H.; Calm, Yitzi M.; D'Imperio, Luke A.; Courtney, Dave T.; Shepard, Steve; Kempa, Krzysztof; Burns, Michael J.

We have previously reported a method to fabricate freestanding, vertically-oriented, and lithographically-ordered Al nanowire arrays via directed assembly, and demonstrated their utility as a plasmonic waveguide. However, the process, a variation on the preparation of anodized aluminum oxide (AAO), involved imprinting Al with a hard stamp, which wore down the stamp and had a low yield of Al NWs. Here we show a new nanoimprint lithography (NIL) technique that uses a soft stamp to pattern a mask on the Al; it provides a greater yield of Al NWs and is less destructive to the stamp, providing a path to applications that require NW arrays over macroscopic areas. This material is based upon work supported by the National Science Foundation Graduate Research Fellowship under Grant No. (DGE-1258923).

3D Micropatterned Surface Inspired by Salvinia molesta via Direct Laser Lithography

PubMed Central

2015-01-01

Biomimetic functional surfaces are attracting increasing attention for their relevant technological applications. Despite these efforts, inherent limitations of microfabrication techniques prevent the replication of complex hierarchical microstructures. Using a 3D laser lithography technique, we fabricated a 3D patterned surface bioinspired to Salvinia molesta leaves. The artificial hairs, with crownlike heads, were reproduced by scaling down (ca. 100 times smaller) the dimensions of natural features, so that microscale hairs with submicrometric resolution were attained. The micropatterned surface, in analogy with the natural model, shows interesting properties in terms of hydrophobicity and air retention when submerged by water, even if realized with a hydrophilic material. Furthermore, we successfully demonstrated the capability to promote localized condensation of water droplets from moisture in the atmosphere. PMID:26558410

Direct nanopatterning of 100 nm metal oxide periodic structures by Deep-UV immersion lithography.

PubMed

Stehlin, Fabrice; Bourgin, Yannick; Spangenberg, Arnaud; Jourlin, Yves; Parriaux, Olivier; Reynaud, Stéphanie; Wieder, Fernand; Soppera, Olivier

2012-11-15

Deep-UV lithography using high-efficiency phase mask has been developed to print 100 nm period grating on sol-gel based thin layer. High efficiency phase mask has been designed to produce a high-contrast interferogram (periodic fringes) under water immersion conditions for 244 nm laser. The demonstration has been applied to a new developed immersion-compatible sol-gel layer. A sol-gel photoresist prepared from zirconium alkoxides caped with methacrylic acids was developed to achieve 50 nm resolution in a single step exposure. The nanostructures can be thermally annealed into ZrO(2). Such route considerably simplifies the process for elaborating nanopatterned surfaces of transition metal oxides, and opens new routes for integrating materials of interest for applications in the field of photocatalysis, photovoltaic, optics, photonics or microelectronics.

Large-area fabrication of patterned ZnO-nanowire arrays using light stamping lithography.

PubMed

Hwang, Jae K; Cho, Sangho; Seo, Eun K; Myoung, Jae M; Sung, Myung M

2009-12-01

We demonstrate selective adsorption and alignment of ZnO nanowires on patterned poly(dimethylsiloxane) (PDMS) thin layers with (aminopropyl)siloxane self-assembled monolayers (SAMs). Light stamping lithography (LSL) was used to prepare patterned PDMS thin layers as neutral passivation regions on Si substrates. (3-Aminopropyl)triethoxysilane-based SAMs were selectively formed only on regions exposing the silanol groups of the Si substrates. The patterned positively charged amino groups define and direct the selective adsorption of ZnO nanowires with negative surface charges in the protic solvent. This procedure can be adopted in automated printing machines that generate patterned ZnO-nanowire arrays on large-area substrates. To demonstrate its usefulness, the LSL method was applied to prepare ZnO-nanowire transistor arrays on 4-in. Si wafers.

Polarization manipulation in single refractive prism based holography lithography

NASA Astrophysics Data System (ADS)

Xiong, Wenjie; Xu, Yi; Xiao, Yujian; Lv, Xiaoxu; Wu, Lijun

2015-01-01

We propose theoretically and demonstrate experimentally a simple but effective strategy for polarization manipulation in single refractive prism based holographic lithography. By tuning the polarization of a single laser beam, we can obtain the pill shape interference pattern with a high-contrast where a complex optical setup and multiple polarizers are needed in the conventional holography lithography. Fabrication of pill shape two-dimensional polymer photonic crystals using one beam and one shoot holography lithography is shown as an example to support our theoretical results. This integrated polarization manipulation technique can release the crucial stability restrictions imposed on the multiple beams holography lithography.

Future direction of direct writing

NASA Astrophysics Data System (ADS)

Kim, Nam-Soo; Han, Kenneth N.

2010-11-01

Direct write technology using special inks consisting of finely dispersed metal nanoparticles in liquid is receiving an undivided attention in recent years for its wide range of applicability in modern electronic industry. The application of this technology covers radio frequency identification-tag (RFID-tag), flexible-electronics, organic light emitting diodes (OLED) display, e-paper, antenna, bumpers used in flip-chip, underfilling, frit, miniresistance applications and biological uses, artificial dental applications and many more. In this paper, the authors have reviewed various direct write technologies on the market and discussed their advantages and shortfalls. Emphasis has given on microdispensing deposition write (MDDW), maskless mesoscale materials deposition (M3D), and ink-jet technologies. All of these technologies allow printing various patterns without employing a mask or a resist with an enhanced speed with the aid of computer. MDDW and M3D are capable of drawing patterns in three-dimension and MDDW, in particular, is capable of writing nanoinks with high viscosity. However, it is still far away for direct write to be fully implemented in the commercial arena. One of the hurdles to overcome is in manufacturing conductive inks which are chemically and physically stable, capable of drawing patterns with acceptable conductivity, and also capable of drawing patterns with acceptable adhesiveness with the substrates. The authors have briefly discussed problems involved in manufacturing nanometal inks to be used in various writing devices. There are numerous factors to be considered in manufacturing such inks. They are reducing agents, concentrations, oxidation, compact ability allowing good conductivity, and stability in suspension.

Assessing the Writing of Deaf College Students: Reevaluating a Direct Assessment of Writing

ERIC Educational Resources Information Center

Schley, Sara; Albertini, John

2005-01-01

The NTID Writing Test was developed to assess the writing ability of postsecondary deaf students entering the National Technical Institute for the Deaf and to determine their appropriate placement into developmental writing courses. While previous research (Albertini et al., 1986; Albertini et al., 1996; Bochner, Albertini, Samar, & Metz, 1992)…

Effects of Directed Written Disclosure on Grief and Distress Symptoms among Bereaved Individuals

ERIC Educational Resources Information Center

Lichtenthal, Wendy G.; Cruess, Dean G.

2010-01-01

Bereavement-specific written disclosure trials have generally demonstrated null effects, but these studies have not directed the focus of writing. This randomized controlled trial compared directed writing that focused on either sense-making or benefit-finding, both associated with adjustment to loss, to traditional, non-directed emotional…

Fabrication of hierarchical micro-nanotopographies for cell attachment studies.

PubMed

López-Bosque, M J; Tejeda-Montes, E; Cazorla, M; Linacero, J; Atienza, Y; Smith, K H; Lladó, A; Colombelli, J; Engel, E; Mata, A

2013-06-28

We report on the development of micro/nanofabrication processes to create hierarchical surface topographies that expand from 50 nm to microns in size on different materials. Three different approaches (named FIB1, FIB2, and EBL) that combine a variety of techniques such as photolithography, reactive ion etching, focused ion beam lithography, electron beam lithography, and soft lithography were developed, each one providing different advantages and disadvantages. The EBL approach was employed to fabricate substrates comprising channels with features between 200 nm and 10 μm in size on polymethylmethacrylate (PMMA), which were then used to investigate the independent or competitive effects of micro- and nanotopographies on cell adhesion and morphology. Rat mesenchymal stem cells (rMSCs) were cultured on four different substrates including 10 μm wide and 500 nm deep channels separated by 10 μm distances (MICRO), 200 nm wide and 100 nm deep nanochannels separated by 200 nm distances (NANO), their combination in parallel (PARAL), and in a perpendicular direction (PERP). Rat MSCs behaved differently on all tested substrates with a high degree of alignment (as measured by both number of aligned cells and average angle) on both NANO and MICRO. Furthermore, cells exhibited the highest level of alignment on PARAL, suggesting a synergetic effect of the two scales of topographies. On the other hand, cells on PERP exhibited the lowest alignment and a consistent change in morphology over time that seemed to be the result of interactions with both micro- and nanochannels positioned in the perpendicular direction, also suggesting a competitive effect of the topographies.

Sub-Optical Lithography With Nanometer Definition Masks

NASA Technical Reports Server (NTRS)

Hartley, Frank T.; Malek, Chantal Khan; Neogi, Jayant

2000-01-01

Nanometer feature size lithography represents a major paradigm shift for the electronics and micro-electro-mechanical industries. In this paper, we discuss the capacity of dynamic focused reactive ion beam (FIB) etching systems to undertake direct and highly anisotropic erosion of thick evaporated gold coatings on boron-doped silicon X-ray mask membranes. FIB offers a new level of flexibility in micro fabrication, allowing for fast fabrication of X-ray masks, where pattern definition and surface alteration are combined in the same step which eliminates the whole lithographic process, in particular resist, resist development, electro-deposition and resist removal. Focused ion beam diameters as small as 7 nm can be obtained enabling fabrication well into the sub-20 nm regime. In preliminary demonstrations of this X-ray mask fabrication technique 22 nm width lines were milled directly through 0.9 microns of gold and a miniature mass spectrometer pattern was milled through over 0.5 microns of gold. Also presented are the results of the shadow printing, using the large depth of field of synchrotron high energy parallel X-ray beam, of these and other sub-optical defined patterns in photoresist conformally coated over surfaces of extreme topographical variation. Assuming that electronic circuits and/or micro devices scale proportionally, the surface area of devices processed with X-ray lithography and 20 nm critical dimension X-ray masks would be 0.5% that of contemporary devices (350 nm CD). The 20 CD mask fabrication represents an initial effort - a further factor of three reduction is anticipated which represents a further order-of-magnitude reduction in die area.

The Impact of Western Criticisms of Japanese Rhetorical Approaches on Learners of Japanese

ERIC Educational Resources Information Center

McKinley, Jim

2014-01-01

For learners of Japanese, a conundrum arises at university level as they are expected to be able to shift between direct and indirect language in various writing tasks. The apparent indirectness in inductive language is required of regular writing tasks such as response essays and e-mails, while the directness of deductive academic writing, a…

Effects of Direct Instruction and Strategy Modeling on Upper-Primary Students’ Writing Development

PubMed Central

López, Paula; Torrance, Mark; Rijlaarsdam, Gert; Fidalgo, Raquel

2017-01-01

Strategy-focused instruction is one of the most effective approaches to improve writing skills. It aims to teach developing writers strategies that give them executive control over their writing processes. Programs under this kind of instruction tend to have multiple components that include direct instruction, modeling and scaffolded practice. This multi-component nature has two drawbacks: it makes implementation challenging due to the amount of time and training required to perform each stage, and it is difficult to determine the underlying mechanisms that contribute to its effectiveness. To unpack why strategy-focused instruction is effective, we explored the specific effects of two key components: direct teaching of writing strategies and modeling of strategy use. Six classes (133 students) of upper-primary education were randomly assigned to one of the two experimental conditions, in which students received instruction aimed at developing effective strategies for planning and drafting, or control group with no strategy instruction: Direct Instruction (N = 46), Modeling (N = 45), and Control (N = 42). Writing performance was assessed before the intervention and immediately after the intervention with two tasks, one collaborative and the other one individual to explore whether differential effects resulted from students writing alone or in pairs. Writing performance was assessed through reader-based and text-based measures of text quality. Results at post-test showed similar improvement in both intervention conditions, relatively to controls, in all measures and in both the collaborative and the individual task. No statistically significant differences were observed between experimental conditions. These findings suggest that both components, direct teaching and modeling, are equally effective in improving writing skills in upper primary students, and these effects are present even after a short training. PMID:28713299

System design considerations for a production-grade, ESR-based x-ray lithography beamline

NASA Astrophysics Data System (ADS)

Kovacs, Stephen; Melore, Dan; Cerrina, Franco; Cole, Richard K.

1991-08-01

As electron storage ring (ESR) based x-ray lithography technology moves closer to becoming an industrial reality, more and more attention has been devoted to studying problem areas related to its application in the production environment. A principle component is the x-ray lithography beamline (XLBL) and its associated design requirements. XLBL, an x-ray radiation transport system, is one of the three major subunits in the ESR-based x-ray lithography system (XLS) and has a pivotal role in defining performance characteristics of the entire XLS. Its major functions are to transport the synchrotron orbital radiation (SOR) to the lithography target area with defined efficiency and to modify SOR into the spectral distribution defined by the lithography process window. These functions must be performed reliably in order to satisfy the required high production rate and ensure 0.25 micron resolution lithography conditions. In this paper the authors attempt to answer some specific questions that arise during the formulation of an XLBL system design. Three principle issues that are essential to formulating a design are (1) Radiation transport efficiency, (2) X-ray optical configurations in the beamline, (3) Beamline system configurations. Some practical solutions to thee problem areas are presented, and the effects of these parameters on lithography production rate are examined.

Trends in imprint lithography for biological applications.

PubMed

Truskett, Van N; Watts, Michael P C

2006-07-01

Imprint lithography is emerging as an alternative nano-patterning technology to traditional photolithography that permits the fabrication of 2D and 3D structures with <100 nm resolution, patterning and modification of functional materials other than photoresist and is low cost, with operational ease for use in developing bio-devices. Techniques for imprint lithography, categorized as either 'molding and embossing' or 'transfer printing', will be discussed in the context of microarrays for genomics, proteomics and tissue engineering. Specifically, fabrication by nanoimprint lithography (NIL), UV-NIL, step and flash imprint lithography (S-FIL), micromolding by elastomeric stamps and micro- and nano-contact printing will be reviewed.

Physical Limitations in Lithography for Microelectronics.

ERIC Educational Resources Information Center

Flavin, P. G.

1981-01-01

Describes techniques being used in the production of microelectronics kits which have replaced traditional optical lithography, including contact and optical projection printing, and X-ray and electron beam lithography. Also includes limitations of each technique described. (SK)

The measurement capabilities of cross-sectional profile of Nanoimprint template pattern using small angle x-ray scattering

NASA Astrophysics Data System (ADS)

Yamanaka, Eiji; Taniguchi, Rikiya; Itoh, Masamitsu; Omote, Kazuhiko; Ito, Yoshiyasu; Ogata, Kiyoshi; Hayashi, Naoya

2016-05-01

Nanoimprint lithography (NIL) is one of the most potential candidates for the next generation lithography for semiconductor. It will achieve the lithography with high resolution and low cost. High resolution of NIL will be determined by a high definition template. Nanoimprint lithography will faithfully transfer the pattern of NIL template to the wafer. Cross-sectional profile of the template pattern will greatly affect the resist profile on the wafer. Therefore, the management of the cross-sectional profile is essential. Grazing incidence small angle x-ray scattering (GI-SAXS) technique has been proposed as one of the method for measuring cross-sectional profile of periodic nanostructure pattern. Incident x-rays are irradiated to the sample surface with very low glancing angle. It is close to the critical angle of the total reflection of the x-ray. The scattered x-rays from the surface structure are detected on a two-dimensional detector. The observed intensity is discrete in the horizontal (2θ) direction. It is due to the periodicity of the structure, and diffraction is observed only when the diffraction condition is satisfied. In the vertical (β) direction, the diffraction intensity pattern shows interference fringes reflected to height and shape of the structure. Features of the measurement using x-ray are that the optical constant for the materials are well known, and it is possible to calculate a specific diffraction intensity pattern based on a certain model of the cross-sectional profile. The surface structure is estimated by to collate the calculated diffraction intensity pattern that sequentially while changing the model parameters with the measured diffraction intensity pattern. Furthermore, GI-SAXS technique can be measured an object in a non-destructive. It suggests the potential to be an effective tool for product quality assurance. We have developed a cross-sectional profile measurement of quartz template pattern using GI-SAXS technique. In this report, we will report the measurement capabilities of GI-SAXS technique as a cross-sectional profile measurement tool of NIL quartz template pattern.

Assessing the writing of deaf college students: reevaluating a direct assessment of writing.

PubMed

Schley, Sara; Albertini, John

2005-01-01

The NTID Writing Test was developed to assess the writing ability of postsecondary deaf students entering the National Technical Institute for the Deaf and to determine their appropriate placement into developmental writing courses. While previous research (Albertini et al., 1986; Albertini et al., 1996; Bochner, Albertini, Samar, & Metz, 1992) has shown the test to be reliable between multiple test raters and as a valid measure of writing ability for placement into these courses, changes in curriculum and the rater pool necessitated a new look at interrater reliability and concurrent validity. We evaluated the rating scores for 236 samples from students who entered the college during the fall 2001. Using a multiprong approach, we confirmed the interrater reliability and the validity of this direct measure of assessment. The implications of continued use of this and similar tests in light of definitions of validity, local control, and the nature of writing are discussed.

Character Reversal in Children: The Prominent Role of Writing Direction

ERIC Educational Resources Information Center

Fischer, Jean-Paul

2017-01-01

Recent research has established that 5- to 6-year-old typically developing children in a left-right writing culture spontaneously reverse left-oriented characters (e.g., they write a [reversed J] instead of J) when they write single characters. Thus, children seem to implicitly apply a right-writing rule (RWR: see Fischer & Koch, 2016a). In…

Hemicellulose block copolymers made from woods for wide-range directed self-assembly lithography enabling wider range of applicable patterning size

NASA Astrophysics Data System (ADS)

Morita, Kazuyo; Yamamoto, Kimiko

2017-03-01

Xylan, one of hemicellulose family, block copolymer was newly developed for wide-range directed self-assembly lithography (DSA). Xylan is higher hydrophilic material because of having many hydroxy groups in one molecule. It means that xylan block copolymer has a possibility of high-chi block copolymer. Generally, DSA is focused on microphase separation for smaller size with high-chi block copolymer and not well known for larger size. In this study, xylan block copolymer was confirmed enabling wider range of patterning size, from smaller size to larger size. The key of xylan block copolymer is a new molecular structure of block copolymer and sugar chain control technology. Sugar content is the important parameter for not only micro-phase separation property but also line edge roughness (LER) and defects. Based on the sugar control technology, wide-range (hp 8.3nm to 26nm L/S and CD 10nm to 51nm hole) DSA patterning was demonstrated. Additionally it was confirmed that xylan block copolymer is suitable for sequential infiltration synthesis (SIS) process.

Advancing three-dimensional MEMS by complimentary laser micro manufacturing

NASA Astrophysics Data System (ADS)

Palmer, Jeremy A.; Williams, John D.; Lemp, Tom; Lehecka, Tom M.; Medina, Francisco; Wicker, Ryan B.

2006-01-01

This paper describes improvements that enable engineers to create three-dimensional MEMS in a variety of materials. It also provides a means for selectively adding three-dimensional, high aspect ratio features to pre-existing PMMA micro molds for subsequent LIGA processing. This complimentary method involves in situ construction of three-dimensional micro molds in a stand-alone configuration or directly adjacent to features formed by x-ray lithography. Three-dimensional micro molds are created by micro stereolithography (MSL), an additive rapid prototyping technology. Alternatively, three-dimensional features may be added by direct femtosecond laser micro machining. Parameters for optimal femtosecond laser micro machining of PMMA at 800 nanometers are presented. The technical discussion also includes strategies for enhancements in the context of material selection and post-process surface finish. This approach may lead to practical, cost-effective 3-D MEMS with the surface finish and throughput advantages of x-ray lithography. Accurate three-dimensional metal microstructures are demonstrated. Challenges remain in process planning for micro stereolithography and development of buried features following femtosecond laser micro machining.

L-shaped fiber-chip grating couplers with high directionality and low reflectivity fabricated with deep-UV lithography.

PubMed

Benedikovic, Daniel; Alonso-Ramos, Carlos; Pérez-Galacho, Diego; Guerber, Sylvain; Vakarin, Vladyslav; Marcaud, Guillaume; Le Roux, Xavier; Cassan, Eric; Marris-Morini, Delphine; Cheben, Pavel; Boeuf, Frédéric; Baudot, Charles; Vivien, Laurent

2017-09-01

Grating couplers enable position-friendly interfacing of silicon chips by optical fibers. The conventional coupler designs call upon comparatively complex architectures to afford efficient light coupling to sub-micron silicon-on-insulator (SOI) waveguides. Conversely, the blazing effect in double-etched gratings provides high coupling efficiency with reduced fabrication intricacy. In this Letter, we demonstrate for the first time, to the best of our knowledge, the realization of an ultra-directional L-shaped grating coupler, seamlessly fabricated by using 193 nm deep-ultraviolet (deep-UV) lithography. We also include a subwavelength index engineered waveguide-to-grating transition that provides an eight-fold reduction of the grating reflectivity, down to 1% (-20  dB). A measured coupling efficiency of -2.7  dB (54%) is achieved, with a bandwidth of 62 nm. These results open promising prospects for the implementation of efficient, robust, and cost-effective coupling interfaces for sub-micrometric SOI waveguides, as desired for large-volume applications in silicon photonics.

3D direct writing fabrication of electrodes for electrochemical storage devices

NASA Astrophysics Data System (ADS)

Wei, Min; Zhang, Feng; Wang, Wei; Alexandridis, Paschalis; Zhou, Chi; Wu, Gang

2017-06-01

Among different printing techniques, direct ink writing is commonly used to fabricate 3D battery and supercapacitor electrodes. The major advantages of using the direct ink writing include effectively building 3D structure for energy storage devices and providing higher power density and higher energy density than traditional techniques due to the increased surface area of electrode. Nevertheless, direct ink writing has high standards for the printing inks, which requires high viscosity, high yield stress under shear and compression, and well-controlled viscoelasticity. Recently, a number of 3D-printed energy storage devices have been reported, and it is very important to understand the printing process and the ink preparation process for further material design and technology development. We discussed current progress of direct ink writing technologies by using various electrode materials including carbon nanotube-based material, graphene-based material, LTO (Li4Ti5O12), LFP (LiFePO4), LiMn1-xFexPO4, and Zn-based metallic oxide. Based on achieve electrochemical performance, these 3D-printed devices deliver performance comparable to the energy storage device fabricated using traditional methods still leaving large room for further improvement. Finally, perspectives are provided on the potential future direction of 3D printing for all solid-state electrochemical energy storage devices.

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NASA Astrophysics Data System (ADS)

Liu, Yuan; Zhu, Qing

2017-07-01

In order to achieve the simulation of elaborate stroke trajectories in Chinese calligraphy, this paper puts forward the innovative researching on writing momentum in the field of non-photorealistic rendering in the first time. Through the analysis of using pen in Chinese calligraphy, the writing momentum is divided into three parts: the center, the side and the back of writing brush by the judgment of the angle of brush holder. We design an algorithm for dynamic outputting writing rendering based on brush model. According to monitoring parameters such as the direction, position and normalized pressure of using pen, we calculate parameters like the footprint direction, the shape, size and nib bending after writing. The algorithm can also judge the dynamic writing trend of stroke trajectories, even automatic generate stroke trajectories by the algorithm forecasted. We achieve a more delicate rendering of Chinese calligraphy to enhance the user's operating results. And we finish the unique writing effect separated the Chinese calligraphy form other general writing results, which greatly enhances the Chinese calligraphy simulation. So that people who lack of writing skills can easily draw a beautiful charm font.

38 CFR 12.6 - Cases of living veterans.

Code of Federal Regulations, 2010 CFR

2010-07-01

... administrator or executor or as directed in writing by such owner, or his or her executor or administrator. (2... or executor, or as directed in writing by such guardian, executor or administrator. (3) To the...

Two-dimensional ultrahigh-density X-ray optical memory.

PubMed

Bezirganyan, Hakob P; Bezirganyan, Siranush E; Bezirganyan, Hayk H; Bezirganyan, Petros H

2007-01-01

Most important aspect of nanotechnology applications in the information ultrahigh storage is the miniaturization of data carrier elements of the storage media with emphasis on the long-term stability. Proposed two-dimensional ultrahigh-density X-ray optical memory, named X-ROM, with long-term stability is an information carrier basically destined for digital data archiving. X-ROM is a semiconductor wafer, in which the high-reflectivity nanosized X-ray mirrors are embedded. Data are encoded due to certain positions of the mirrors. Ultrahigh-density data recording procedure can e.g., be performed via mask-less zone-plate-array lithography (ZPAL), spatial-phase-locked electron-beam lithography (SPLEBL), or focused ion-beam lithography (FIB). X-ROM manufactured by nanolithography technique is a write-once memory useful for terabit-scale memory applications, if the surface area of the smallest recording pits is less than 100 nm2. In this case the X-ROM surface-storage capacity of a square centimetre becomes by two orders of magnitude higher than the volumetric data density really achieved for three-dimensional optical data storage medium. Digital data read-out procedure from proposed X-ROM can e.g., be performed via glancing-angle incident X-ray micro beam (GIX) using the well-developed X-ray reflectometry technique. In presented theoretical paper the crystal-analyser operating like an image magnifier is added to the set-up of X-ROM data handling system for the purpose analogous to case of application the higher numerical aperture objective in optical data read-out system. We also propose the set-up of the X-ROM readout system based on more the one incident X-ray micro beam. Presented scheme of two-beam data handling system, which operates on two mutually perpendicular well-collimated monochromatic incident X-ray micro beams, essentially increases the reliability of the digital information read-out procedure. According the graphs of characteristic functions presented in paper, one may choose optimally the incident radiation wavelength, as well as the angle of incidence of X-ray micro beams, appropriate for proposed digital data read-out procedure.

Overlay performance assessment of MAPPER's FLX-1200 (Conference Presentation)

NASA Astrophysics Data System (ADS)

Lattard, Ludovic; Servin, Isabelle; Pradelles, Jonathan; Blancquaert, Yoann; Rademaker, Guido; Pain, Laurent; de Boer, Guido; Brandt, Pieter; Dansberg, Michel; Jager, Remco J. A.; Peijster, Jerry J. M.; Slot, Erwin; Steenbrink, Stijn W. H. K.; Vergeer, Niels; Wieland, Marco

2017-04-01

Mapper Lithography has introduced its first product, the FLX-1200, which is installed at CEA-Leti in Grenoble (France). This is a mask less lithography system, based on massively parallel electron-beam writing with high-speed optical data transport for switching the electron beams. This FLX platform is initially targeted for 1 wph performance for 28 nm technology nodes, but can also be used for less demanding imaging. The electron source currently integrated is capable of scaling to 10 wph at the same resolution performance, which will be implemented by gradually upgrading the illumination optics. The system has an optical alignment system enabling mix-and-match with optical 193 nm immersion systems using standard NVSM marks. The tool at CEA-Leti is in-line with a Sokudo Duo clean track. Mapper Lithography and CEA-Leti are working in collaboration to develop turnkey solution for specific applications. At previous conferences we have presented imaging results including 28nm node resolution, cross wafer CDu of 2.5nm 3 and a throughput of half a wafer per hour, overhead times included. At this conference we will present results regarding the overlay performance of the FLX-1200. In figure 2 an initial result towards measuring the overlay performance of the FLX-1200 is shown. We have exposed a wafer twice without unloading the wafer in between exposures. In the first exposure half of a dense dot array is exposed. In the second exposure the remainder of the dense dot array is exposed. After development the wafer has been inspected using a CD-SEM at 480 locations distributed over an area of 100mm x 100mm. For each SEM image the shift of the pattern written in the first exposure relative to the pattern written in the second exposure is measured. Cross wafer this shift is 7 nm u+3s in X and 5 nm u+3s in Y. The next step is to evaluate the impact of unloading and loading of the wafer in between exposures. At the conference the latest results will be presented.

Bridging the Gap: Contextualizing Professional Ethics in Collaborative Writing Projects

ERIC Educational Resources Information Center

Rice, J. A.

2007-01-01

Many business and technical writing students find classroom discussions of professional ethics interesting and enjoyable. However, when trying to incorporate the content of discussions directly into their writing practices, they often experience difficulties linking ethical concepts to writing process. This article discusses how instructors can…

M&A For Lithography Of Sparse Arrays Of Sub-Micrometer Features

DOEpatents

Brueck, Steven R.J.; Chen, Xiaolan; Zaidi, Saleem; Devine, Daniel J.

1998-06-02

Methods and apparatuses are disclosed for the exposure of sparse hole and/or mesa arrays with line:space ratios of 1:3 or greater and sub-micrometer hole and/or mesa diameters in a layer of photosensitive material atop a layered material. Methods disclosed include: double exposure interferometric lithography pairs in which only those areas near the overlapping maxima of each single-period exposure pair receive a clearing exposure dose; double interferometric lithography exposure pairs with additional processing steps to transfer the array from a first single-period interferometric lithography exposure pair into an intermediate mask layer and a second single-period interferometric lithography exposure to further select a subset of the first array of holes; a double exposure of a single period interferometric lithography exposure pair to define a dense array of sub-micrometer holes and an optical lithography exposure in which only those holes near maxima of both exposures receive a clearing exposure dose; combination of a single-period interferometric exposure pair, processing to transfer resulting dense array of sub-micrometer holes into an intermediate etch mask, and an optical lithography exposure to select a subset of initial array to form a sparse array; combination of an optical exposure, transfer of exposure pattern into an intermediate mask layer, and a single-period interferometric lithography exposure pair; three-beam interferometric exposure pairs to form sparse arrays of sub-micrometer holes; five- and four-beam interferometric exposures to form a sparse array of sub-micrometer holes in a single exposure. Apparatuses disclosed include arrangements for the three-beam, five-beam and four-beam interferometric exposures.

UDOF direct improvement by modulating mask absorber thickness

NASA Astrophysics Data System (ADS)

Yu, Tuan-Yen; Lio, En Chuan; Chen, Po Tsang; Wei, Chih I.; Chen, Yi Ting; Peng, Ming Chun; Chou, William; Yu, Chun Chi

2016-10-01

As the process generation migrate to advanced and smaller dimension or pitch, the mask and resist 3D effects will impact the lithography focus common window severely because of both individual depth-of-focus (iDOF) range decrease and center mismatch. Furthermore, some chemical or thermal factors, such as PEB (Post Exposure Bake) also worsen the usable depth-of-focus (uDOF) performance. So the mismatch of thru-pitch iDOF center should be considered as a lithography process integration issue, and more complicated to partition the 3D effects induced by optical or chemical factors. In order to reduce the impact of 3D effects induced by both optical and chemical issues, and improve iDOF center mismatch, we would like to propose a mask absorber thickness offset approach, which is directly to compensate the iDOF center bias by adjusting mask absorber thickness, for iso, semi-iso or dense characteristics in line, space or via patterns to enlarge common process window, i.e uDOF, which intends to provide similar application as Flexwave[1] (ASML trademark). By the way, since mask absorber thickness offset approach is similar to focus tuning or change on wafer lithography process, it could be acted as the process tuning method of photoresist (PR) profile optimization locally, PR scum improvement in specific patterns or to modulate etching bias to meet process integration request. For mass production consideration, and available material, current att-PSM blank, quartz, MoSi with chrome layer as hard-mask in reticle process, will be implemented in this experiment, i.e. chrome will be kept remaining above partial thru-pitch patterns, and act as the absorber thickness bias in different patterns. And then, from the best focus offset of thru-pitch patterns, the iDOF center shifts could be directly corrected and to enlarge uDOF by increasing the overlap of iDOF. Finally, some negative tone development (NTD) result in line patterns will be demonstrated as well.

The Effect of Concept Mapping on L2 Writing Performance: Examining Possible Effects of Trait-Level Writing Anxiety

ERIC Educational Resources Information Center

Machida, Naoko; Dalsky, David J.

2014-01-01

Research on anxiety in a foreign language-learning context is well-documented; however, few studies have directly focused on anxiety occurring within writing contexts despite the fact that writing anxiety is known to affect students' learning. The present study examined the effectiveness of concept mapping considering students' writing anxiety.…

Monolithic microfabricated valves and pumps by multilayer soft lithography.

PubMed

Unger, M A; Chou, H P; Thorsen, T; Scherer, A; Quake, S R

2000-04-07

Soft lithography is an alternative to silicon-based micromachining that uses replica molding of nontraditional elastomeric materials to fabricate stamps and microfluidic channels. We describe here an extension to the soft lithography paradigm, multilayer soft lithography, with which devices consisting of multiple layers may be fabricated from soft materials. We used this technique to build active microfluidic systems containing on-off valves, switching valves, and pumps entirely out of elastomer. The softness of these materials allows the device areas to be reduced by more than two orders of magnitude compared with silicon-based devices. The other advantages of soft lithography, such as rapid prototyping, ease of fabrication, and biocompatibility, are retained.

Nanoimprint lithography for nanodevice fabrication

NASA Astrophysics Data System (ADS)

Barcelo, Steven; Li, Zhiyong

2016-09-01

Nanoimprint lithography (NIL) is a compelling technique for low cost nanoscale device fabrication. The precise and repeatable replication of nanoscale patterns from a single high resolution patterning step makes the NIL technique much more versatile than other expensive techniques such as e-beam or even helium ion beam lithography. Furthermore, the use of mechanical deformation during the NIL process enables grayscale lithography with only a single patterning step, not achievable with any other conventional lithography techniques. These strengths enable the fabrication of unique nanoscale devices by NIL for a variety of applications including optics, plasmonics and even biotechnology. Recent advances in throughput and yield in NIL processes demonstrate the potential of being adopted for mainstream semiconductor device fabrication as well.

Fabrication of tunable diffraction grating by imprint lithography with photoresist mold

NASA Astrophysics Data System (ADS)

Yamada, Itsunari; Ikeda, Yusuke; Higuchi, Tetsuya

2018-05-01

We fabricated a deformable transmission silicone [poly(dimethylsiloxane)] grating using a two-beam interference method and imprint lithography and evaluated its optical characteristics during a compression process. The grating pattern with 0.43 μm depth and 1.0 μm pitch was created on a silicone surface by an imprinting process with a photoresist mold to realize a simple, low-cost fabrication process. The first-order diffraction transmittance of this grating reached 10.3% at 632.8 nm wavelength. We also measured the relationship between the grating period and compressive stress to the fabricated elements. The grating period changed from 1.0 μm to 0.84 μm by 16.6% compression of the fabricated element in one direction, perpendicular to the grooves, and the first-order diffraction transmittance was 8.6%.

Triangle pore arrays fabricated on Si (111) substrate by sphere lithography combined with metal-assisted chemical etching and anisotropic chemical etching

NASA Astrophysics Data System (ADS)

Asoh, Hidetaka; Fujihara, Kosuke; Ono, Sachiko

2012-07-01

The morphological change of silicon macropore arrays formed by metal-assisted chemical etching using shape-controlled Au thin film arrays was investigated during anisotropic chemical etching in tetramethylammonium hydroxide (TMAH) aqueous solution. After the deposition of Au as the etching catalyst on (111) silicon through a honeycomb mask prepared by sphere lithography, the specimens were etched in a mixed solution of HF and H2O2 at room temperature, resulting in the formation of ordered macropores in silicon along the [111] direction, which is not achievable by conventional chemical etching without a catalyst. In the anisotropic etching in TMAH, the macropores changed from being circular to being hexagonal and finally to being triangular, owing to the difference in etching rate between the crystal planes.

Illumination system design for a three-aspherical-mirror projection camera for extreme-ultraviolet lithography.

PubMed

Li, Y; Kinoshita, H; Watanabe, T; Irie, S; Shirayone, S; Okazaki, S

2000-07-01

A scanning critical illumination system is designed to couple a synchrotron radiation source to a three-aspherical-mirror imaging system for extreme ultraviolet lithography. A static illumination area of H x V = 8 mm x 3 mm (where H is horizontal and V is vertical) can be obtained. Uniform intensity distribution and a large ring field of H x V = 150 mm x 3 mm can be achieved by scanning of the mirror of the condenser. The coherence factor (sigma) of this illumination system is approximately 0.6, with the same beam divergence in both the horizontal and the vertical directions. We describe the performance of the imaging optics at sigma = 0.6 to confirm that the illumination optics can meet the requirements for three-aspherical-mirror imaging optics with a feature size of 0.06 microm.

Inhomogeneity of PAGs in resist film studied by molecular-dynamics simulations for EUV lithography

NASA Astrophysics Data System (ADS)

Toriumi, Minoru; Itani, Toshiro

2014-03-01

EUV resist materials are requested simultaneously to improve the resolution, line-edge roughness (LER), and sensitivity (RLS). In a resist film inhomogeneous structures in nanometer region may have large effects on directly the resolution and LER and indirectly on sensitivity. Inhomogeneity of PAGs in a hybrid resist for EUV lithography was investigated using molecular dynamics simulations. The hybrid resist film showed the inhomogeneous positions and motions of PAG cations and anions. Free volumes in resist matrix influence the motions of PAGs. Molecular structure such as bulky phenyl groups of a PAG cation localize the positions and reduce the motion of a cation. Chemical properties such as ionic interactions and lone-pair interaction also play an important role to determine the inhomogeneity of PAGs. Fluorine interaction enables active motions of PAG anions.

Progress in coherent lithography using table-top extreme ultraviolet lasers

NASA Astrophysics Data System (ADS)

Li, Wei

Nanotechnology has drawn a wide variety of attention as interesting phenomena occurs when the dimension of the structures is in the nanometer scale. The particular characteristics of nanoscale structures had enabled new applications in different fields in science and technology. Our capability to fabricate these nanostructures routinely for sure will impact the advancement of nanoscience. Apart from the high volume manufacturing in semiconductor industry, a small-scale but reliable nanofabrication tool can dramatically help the research in the field of nanotechnology. This dissertation describes alternative extreme ultraviolet (EUV) lithography techniques which combine table-top EUV laser and various cost-effective imaging strategies. For each technique, numerical simulations, system design, experiment result and its analysis will be presented. In chapter II, a brief review of the main characteristics of table-top EUV lasers will be addressed concentrating on its high power and large coherence radius that enable the lithography application described herein. The development of a Talbot EUV lithography system which is capable of printing 50nm half pitch nanopatterns will be illustrated in chapter III. A detailed discussion of its resolution limit will be presented followed by the development of X-Y-Z positioning stage, the fabrication protocol for diffractive EUV mask, and the pattern transfer using self- developed ion beam etching, and the dose control unit. In addition, this dissertation demonstrated the capability to fabricate functional periodic nanostructures using Talbot EUV lithography. After that, resolution enhancement techniques like multiple exposure, displacement Talbot EUV lithography, fractional Talbot EUV lithography, and Talbot lithography using 18.9nm amplified spontaneous emission laser will be demonstrated. Chapter IV will describe a hybrid EUV lithography which combines the Talbot imaging and interference lithography rendering a high resolution interference pattern whose lattice is modified by a custom designed Talbot mask. In other words, this method enables filling the arbitrary Talbot cell with ultra-fine interference nanofeatures. Detailed optics modeling, system design and experiment results using He-Ne laser and table top EUV laser are included. The last part of chapter IV will analyze its exclusive advantages over traditional Talbot or interference lithography.

Formative Assessment and Writing: A Meta-Analysis

ERIC Educational Resources Information Center

Graham, Steve; Hebert, Michael; Harris, Karen R.

2015-01-01

To determine whether formative writing assessments that are directly tied to everyday classroom teaching and learning enhance students' writing performance, we conducted a meta-analysis of true and quasi-experiments conducted with students in grades 1 to 8. We found that feedback to students about writing from adults, peers, self, and computers…

Playwriting: Not Just for Dramatists.

ERIC Educational Resources Information Center

Robbins, Bruce

Playwriting gives students focused experience with dialogue, which is useful in many kinds of writing, and provides an avenue for process-based writing instruction. The assignment of writing plays allows students to try out various personae without risking direct self-identification. Students write more for one another than for the teacher,…

Predicting Students' Writing Performance on the NAEP from Student- and State-Level Variables

ERIC Educational Resources Information Center

Mo, Ya; Troia, Gary A.

2017-01-01

This study examines the relationship between students' demographic background and their experiences with writing at school, the alignment between state and National Assessment of Educational Progress (NAEP) direct writing assessments, and students' NAEP writing performance. The study utilizes primary data collection via content analysis of writing…

Motivational Scaffolding, Politeness, and Writing Center Tutoring

ERIC Educational Resources Information Center

Mackiewicz, Jo; Thompson, Isabelle

2013-01-01

Writing center tutors know that improving writing skills requires sustained effort over a long period of time. They also know that motivation--the drive to actively invest in sustained effort toward a goal--is essential for writing improvement. Because motivation can direct attention toward particular tasks and increase both effort and…

3D micro-lenses for free space intra-chip coupling in photonic-integrated circuits (Conference Presentation)

NASA Astrophysics Data System (ADS)

Thomas, Robert; Williams, Gwilym I.; Ladak, Sam; Smowton, Peter M.

2017-02-01

The integration of multiple optical elements on a common substrate to create photonic integrated circuits (PIC) has been successfully applied in: fibre-optic communications, photonic computing and optical sensing. The push towards III-Vs on silicon promises a new generation of integrated devices that combine the advantages of both integrated electronics and optics in a single substrate. III-V edge emitting laser diodes offer high efficiency and low threshold currents making them ideal candidates for the optically active elements of the next generation of PICs. Nevertheless, the highly divergent and asymmetric beam shapes intrinsic to these devices limits the efficiency with which optical elements can be free space coupled intra-chip; a capability particularly desirable for optical sensing applications e.g. [1]. Furthermore, the monolithic nature of the integrated approach prohibits the use of macroscopic lenses to improve coupling. However, with the advent of 3D direct laser writing, three dimensional lenses can now be manufactured on a microscopic-scale [2], making the use of micro-lens technology for enhanced free space coupling of integrated optical elements feasible. Here we demonstrate the first use of 3D micro-lenses to improve the coupling efficiency of monolithically integrated lasers. Fabricated from IP-dip photoresist using a Nanoscribe GmbH 3D lithography tool, the lenses are embedded directly onto a structured GaInP/AlGaInP substrate containing arrays of ridge lasers free space coupled to one another via a 200 μm air gap. We compare the coupling efficiency of these lasers with and without micro-lenses through photo-voltage and beam profile measurements and discuss optimisation of lens design.

Development of electrical-erosion instrument for direct write micro-patterning on large area conductive thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Álvarez, Ángel Luis; Coya, Carmen; García-Vélez, Miguel

2015-08-15

We have developed a complete instrument to perform direct, dry, and cost-effective lithography on conductive materials, based on localized electrical discharges, which avoids using masks or chemicals typical of conventional photolithography. The technique is considered fully compatible with substrate transport based systems, like roll-to-roll technology. The prototype is based on two piezo nano-steppers coupled to three linear micro-stages to cover a large scale operation from micrometers to centimeters. The operation mode consists of a spring probe biased at low DC voltage with respect to a grounded conductive layer. The tip slides on the target layer keeping contact with the materialmore » in room conditions, allowing continuous electric monitoring of the process, and also real-time tilt correction via software. The sliding tip leaves an insulating path (limited by the tip diameter) along the material, enabling to draw electrically insulated tracks and pads. The physical principle of operation is based in the natural self-limitation of the discharge due to material removal or insulation. The so produced electrical discharges are very fast, in the range of μs, so features may be performed at speeds of few cm/s, enabling scalability to large areas. The instrument has been tested on different conducting materials as gold, indium tin oxide, and aluminum, allowing the fabrication of alphanumeric displays based on passive matrix of organic light emitting diodes without the use of masks or photoresists. We have verified that the highest potential is achieved on graphene, where no waste material is detected, producing excellent well defined edges. This allows manufacturing graphene micro-ribbons with a high aspect ratio up to 1200:1.« less

Development of electrical-erosion instrument for direct write micro-patterning on large area conductive thin films

NASA Astrophysics Data System (ADS)

Álvarez, Ángel Luis; Coya, Carmen; García-Vélez, Miguel

2015-08-01

We have developed a complete instrument to perform direct, dry, and cost-effective lithography on conductive materials, based on localized electrical discharges, which avoids using masks or chemicals typical of conventional photolithography. The technique is considered fully compatible with substrate transport based systems, like roll-to-roll technology. The prototype is based on two piezo nano-steppers coupled to three linear micro-stages to cover a large scale operation from micrometers to centimeters. The operation mode consists of a spring probe biased at low DC voltage with respect to a grounded conductive layer. The tip slides on the target layer keeping contact with the material in room conditions, allowing continuous electric monitoring of the process, and also real-time tilt correction via software. The sliding tip leaves an insulating path (limited by the tip diameter) along the material, enabling to draw electrically insulated tracks and pads. The physical principle of operation is based in the natural self-limitation of the discharge due to material removal or insulation. The so produced electrical discharges are very fast, in the range of μs, so features may be performed at speeds of few cm/s, enabling scalability to large areas. The instrument has been tested on different conducting materials as gold, indium tin oxide, and aluminum, allowing the fabrication of alphanumeric displays based on passive matrix of organic light emitting diodes without the use of masks or photoresists. We have verified that the highest potential is achieved on graphene, where no waste material is detected, producing excellent well defined edges. This allows manufacturing graphene micro-ribbons with a high aspect ratio up to 1200:1.

Development of electrical-erosion instrument for direct write micro-patterning on large area conductive thin films.

PubMed

Álvarez, Ángel Luis; Coya, Carmen; García-Vélez, Miguel

2015-08-01

We have developed a complete instrument to perform direct, dry, and cost-effective lithography on conductive materials, based on localized electrical discharges, which avoids using masks or chemicals typical of conventional photolithography. The technique is considered fully compatible with substrate transport based systems, like roll-to-roll technology. The prototype is based on two piezo nano-steppers coupled to three linear micro-stages to cover a large scale operation from micrometers to centimeters. The operation mode consists of a spring probe biased at low DC voltage with respect to a grounded conductive layer. The tip slides on the target layer keeping contact with the material in room conditions, allowing continuous electric monitoring of the process, and also real-time tilt correction via software. The sliding tip leaves an insulating path (limited by the tip diameter) along the material, enabling to draw electrically insulated tracks and pads. The physical principle of operation is based in the natural self-limitation of the discharge due to material removal or insulation. The so produced electrical discharges are very fast, in the range of μs, so features may be performed at speeds of few cm/s, enabling scalability to large areas. The instrument has been tested on different conducting materials as gold, indium tin oxide, and aluminum, allowing the fabrication of alphanumeric displays based on passive matrix of organic light emitting diodes without the use of masks or photoresists. We have verified that the highest potential is achieved on graphene, where no waste material is detected, producing excellent well defined edges. This allows manufacturing graphene micro-ribbons with a high aspect ratio up to 1200:1.

Directed Self-Assembly of Star-Block Copolymers by Topographic Nanopatterns through Nucleation and Growth Mechanism.

PubMed

Krishnan, Mohan Raj; Lu, Kai-Yuan; Chiu, Wen-Yu; Chen, I-Chen; Lin, Jheng-Wei; Lo, Ting-Ya; Georgopanos, Prokopios; Avgeropoulos, Apostolos; Lee, Ming-Chang; Ho, Rong-Ming

2018-04-01

Exploring the ordering mechanism and dynamics of self-assembled block copolymer (BCP) thin films under confined conditions are highly essential in the application of BCP lithography. In this study, it is aimed to examine the self-assembling mechanism and kinetics of silicon-containing 3-arm star-block copolymer composed of polystyrene (PS) and poly(dimethylsiloxane) blocks as nanostructured thin films with perpendicular cylinders and controlled lateral ordering by directed self-assembly using topographically patterned substrates. The ordering process of the star-block copolymer within fabricated topographic patterns with PS-functionalized sidewall can be carried out through the type of secondary (i.e., heterogeneous) nucleation for microphase separation initiated from the edge and/or corner of the topographic patterns, and directed to grow as well-ordered hexagonally packed perpendicular cylinders. The growth rate for the confined microphase separation is highly dependent upon the dimension and also the geometric texture of the preformed pattern. Fast self-assembly for ordering of BCP thin film can be achieved by lowering the confinement dimension and also increasing the concern number of the preformed pattern, providing a new strategy for the design of BCP lithography from the integration of top-down and bottom-up approaches. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Successful demonstration of a comprehensive lithography defect monitoring strategy

NASA Astrophysics Data System (ADS)

Peterson, Ingrid B.; Breaux, Louis H.; Cross, Andrew; von den Hoff, Michael

2003-07-01

This paper describes the validation of the methodology, the model and the impact of an optimized Lithography Defect Monitoring Strategy at two different semiconductor manufacturing factories. The lithography defect inspection optimization was implemented for the Gate Module at both factories running 0.13-0.15μm technologies on 200mm wafers, one running microprocessor and the other memory devices. As minimum dimensions and process windows decrease in the lithography area, new technologies and technological advances with resists and resist systems are being implemented to meet the demands. Along with these new technological advances in the lithography area comes potentially unforeseen defect issues. The latest lithography processes involve new resists in extremely thin, uniform films, exposing the films under conditions of highly optimized focus and illumination, and finally removing the resist completely and cleanly. The lithography cell is defined as the cluster of process equipment that accomplishes the coating process (surface prep, resist spin, edge-bead removal and soft bake), the alignment and exposure, and the developing process (post-exposure bake, develop, rinse) of the resist. Often the resist spinning process involves multiple materials such as BARC (bottom ARC) and / or TARC (top ARC) materials in addition to the resist itself. The introduction of these new materials with the multiple materials interfaces and the tightness of the process windows leads to an increased variety of defect mechanisms in the lithography area. Defect management in the lithography area has become critical to successful product introduction and yield ramp. The semiconductor process itself contributes the largest number and variety of defects, and a significant portion of the total defects originate within the lithography cell. From a defect management perspective, the lithography cell has some unique characteristics. First, defects in the lithography process module have the widest range of sizes, from full-wafer to suboptical, and with the largest variety of characteristics. Some of these defects fall into the categories of coating problems, focus and exposure defects, developer defects, edge-bead removal problems, contamination and scratches usually defined as lithography macro defects as shown in Figure 1. Others fall into the category of lithography micro defects, Figure 2. They are characterized as having low topography such as stains, developer spots, satellites, are very small such as micro-bridging, partial micro-bridging, micro-bubbles, CD variation and single isolated missing or deformed contacts or vias. Lithography is the only area of the fab besides CMP in which defect excursions can be corrected by reworking the wafers. The opportunity to fix defect problems without scrapping wafers is best served by a defect inspection strategy that captures the full range of all relevant defect types with a proper balance between the costs of monitoring and inspection and the potential cost of yield loss. In the previous paper [1] it was shown that a combination of macro inspection and high numerical aperture (NA) brightfield imaging inspection technology is best suited for the application in the case of the idealized fab modeled. In this paper we will report on the successful efforts in implementing and validating the lithography defect monitoring strategy at two existing 200 mm factories running 0.15 μm and 0.13 μm design rules.

Desktop Nanofabrication with Massively Multiplexed Beam Pen Lithography

PubMed Central

Liao, Xing; Brown, Keith A.; Schmucker, Abrin L.; Liu, Guoliang; He, Shu; Shim, Wooyoung; Mirkin, Chad A.

2013-01-01

The development of a lithographic method that can rapidly define nanoscale features across centimeter-scale surfaces has been a long standing goal of the nanotechnology community. If such a ‘desktop nanofab’ could be implemented in a low-cost format, it would bring the possibility of point-of-use nanofabrication for rapidly prototyping diverse functional structures. Here we report the development of a new tool that is capable of writing arbitrary patterns composed of diffraction-unlimited features over square centimeter areas that are in registry with existing patterns and nanostructures. Importantly, this instrument is based on components that are inexpensive compared to the combination of state-of-the-art nanofabrication tools that approach its capabilities. This tool can be used to prototype functional electronic devices in a mask-free fashion in addition to providing a unique platform for performing high throughput nano- to macroscale photochemistry with relevance to biology and medicine. PMID:23868336

Laser patterning of transparent polymers assisted by plasmon excitation.

PubMed

Elashnikov, R; Trelin, A; Otta, J; Fitl, P; Mares, D; Jerabek, V; Svorcik, V; Lyutakov, O

2018-06-13

Plasmon-assisted lithography of thin transparent polymer films, based on polymer mass-redistribution under plasmon excitation, is presented. The plasmon-supported structures were prepared by thermal annealing of thin Ag films sputtered on glass or glass/graphene substrates. Thin films of polymethylmethacrylate, polystyrene and polylactic acid were then spin-coated on the created plasmon-supported structures. Subsequent laser beam writing, at the wavelength corresponding to the position of plasmon absorption, leads to mass redistribution and patterning of the thin polymer films. The prepared structures were characterized using UV-Vis spectroscopy and confocal and AFM microscopy. The shape of the prepared structures was found to be strongly dependent on the substrate type. The mechanism leading to polymer patterning was examined and attributed to the plasmon-heating. The proposed method makes it possible to create different patterns in polymer films without the need for wet technological stages, powerful light sources or a change in the polymer optical properties.

Desktop nanofabrication with massively multiplexed beam pen lithography.

PubMed

Liao, Xing; Brown, Keith A; Schmucker, Abrin L; Liu, Guoliang; He, Shu; Shim, Wooyoung; Mirkin, Chad A

2013-01-01

The development of a lithographic method that can rapidly define nanoscale features across centimetre-scale surfaces has been a long-standing goal for the nanotechnology community. If such a 'desktop nanofab' could be implemented in a low-cost format, it would bring the possibility of point-of-use nanofabrication for rapidly prototyping diverse functional structures. Here we report the development of a new tool that is capable of writing arbitrary patterns composed of diffraction-unlimited features over square centimetre areas that are in registry with existing patterns and nanostructures. Importantly, this instrument is based on components that are inexpensive compared with the combination of state-of-the-art nanofabrication tools that approach its capabilities. This tool can be used to prototype functional electronic devices in a mask-free fashion in addition to providing a unique platform for performing high-throughput nano- to macroscale photochemistry with relevance to biology and medicine.

Bio-inspired direct patterning functional nanothin microlines: controllable liquid transfer.

PubMed

Wang, Qianbin; Meng, Qingan; Wang, Pengwei; Liu, Huan; Jiang, Lei

2015-04-28

Developing a general and low-cost strategy that enables direct patterning of microlines with nanometer thickness from versatile liquid-phase functional materials and precise positioning of them on various substrates remains a challenge. Herein, with inspiration from the oriental wisdom to control ink transfer by Chinese brushes, we developed a facile and general writing strategy to directly pattern various functional microlines with homogeneous distribution and nanometer-scale thickness. It is demonstrated that the width and thickness of the microlines could be well-controlled by tuning the writing method, providing guidance for the adaptation of this technique to various systems. It is also shown that various functional liquid-phase materials, such as quantum dots, small molecules, polymers, and suspensions of nanoparticles, could directly write on the substrates with intrinsic physicochemical properties well-preserved. Moreover, this technique enabled direct patterning of liquid-phase materials on certain microdomains, even in multiple layered style, thus a microdomain localized chemical reaction and the patterned surface chemical modification were enabled. This bio-inspired direct writing device will shed light on the template-free printing of various functional micropatterns, as well as the integrated functional microdevices.

Direct-write 3D printing of composite materials with magnetically aligned discontinuous reinforcement

NASA Astrophysics Data System (ADS)

Martin, Joshua J.; Caunter, Andrew; Dendulk, Amy; Goodrich, Scott; Pembroke, Ryan; Shores, Dan; Erb, Randall M.

2017-05-01

Three-dimensional (3D) printing of fiber reinforced composites represents an enabling technology that may bring toughness and specific strength to complex parts. Recently, direct-write 3D printing has been offered as a promising route to manufacturing fiber reinforced composites that show high specific strength. These approaches primarily rely on the use of shear-alignment during the extrusion process to align fibers along the printing direction. Shear alignment prevents fibers from being oriented along principle stress directions of the final designed part. This paper describes a new direct-write style 3D printing system that incorporates magnetic fields to actively control the orientation of reinforcing fibers during the printing of fiber reinforced composites. Such a manufacturing system is fraught with complications from the high shear dominated alignment experienced by the fibers during extrusion to the slow magnetic alignment dynamics of fibers in viscous media. Here we characterize these issues and suggest effective operating windows in which magnetic alignment is a viable approach to orienting reinforcing particles during direct-write 3D printing.

Optical inspection of NGL masks

NASA Astrophysics Data System (ADS)

Pettibone, Donald W.; Stokowski, Stanley E.

2004-12-01

For the last five years KLA-Tencor and our joint venture partners have pursued a research program studying the ability of optical inspection tools to meet the inspection needs of possible NGL lithographies. The NGL technologies that we have studied include SCALPEL, PREVAIL, EUV lithography, and Step and Flash Imprint Lithography. We will discuss the sensitivity of the inspection tools and mask design factors that affect tool sensitivity. Most of the work has been directed towards EUV mask inspection and how to optimize the mask to facilitate inspection. Our partners have succeeded in making high contrast EUV masks ranging in contrast from 70% to 98%. Die to die and die to database inspection of EUV masks have been achieved with a sensitivity that is comparable to what can be achieved with conventional photomasks, approximately 80nm defect sensitivity. We have inspected SCALPEL masks successfully. We have found a limitation of optical inspection when applied to PREVAIL stencil masks. We have run inspections on SFIL masks in die to die, reflected light, in an effort to provide feedback to improve the masks. We have used a UV inspection system to inspect both unpatterned EUV substrates (no coatings) and blanks (with EUV multilayer coatings). These inspection results have proven useful in driving down the substrate and blank defect levels.

Immersion and dry lithography monitoring for flash memories (after develop inspection and photo cell monitor) using a darkfield imaging inspector with advanced binning technology

NASA Astrophysics Data System (ADS)

Parisi, P.; Mani, A.; Perry-Sullivan, C.; Kopp, J.; Simpson, G.; Renis, M.; Padovani, M.; Severgnini, C.; Piacentini, P.; Piazza, P.; Beccalli, A.

2009-12-01

After-develop inspection (ADI) and photo-cell monitoring (PM) are part of a comprehensive lithography process monitoring strategy. Capturing defects of interest (DOI) in the lithography cell rather than at later process steps shortens the cycle time and allows for wafer re-work, reducing overall cost and improving yield. Low contrast DOI and multiple noise sources make litho inspection challenging. Broadband brightfield inspectors provide the highest sensitivity to litho DOI and are traditionally used for ADI and PM. However, a darkfield imaging inspector has shown sufficient sensitivity to litho DOI, providing a high-throughput option for litho defect monitoring. On the darkfield imaging inspector, a very high sensitivity inspection is used in conjunction with advanced defect binning to detect pattern issues and other DOI and minimize nuisance defects. For ADI, this darkfield inspection methodology enables the separation and tracking of 'color variation' defects that correlate directly to CD variations allowing a high-sampling monitor for focus excursions, thereby reducing scanner re-qualification time. For PM, the darkfield imaging inspector provides sensitivity to critical immersion litho defects at a lower cost-of-ownership. This paper describes litho monitoring methodologies developed and implemented for flash devices for 65nm production and 45nm development using the darkfield imaging inspector.

High Throughput Optical Lithography by Scanning a Massive Array of Bowtie Aperture Antennas at Near-Field

DTIC Science & Technology

2015-11-03

scale optical projection system powered by spatial light modulators, such as digital micro-mirror device ( DMD ). Figure 4 shows the parallel lithography ...1Scientific RepoRts | 5:16192 | DOi: 10.1038/srep16192 www.nature.com/scientificreports High throughput optical lithography by scanning a massive...array of bowtie aperture antennas at near-field X. Wen1,2,3,*, A. Datta1,*, L. M. Traverso1, L. Pan1, X. Xu1 & E. E. Moon4 Optical lithography , the

Sub-100nm, Maskless Deep-UV Zone-Plate Array Lithography

DTIC Science & Technology

2004-05-07

The basic idea is to use fiducial grids, fabricated using interference lithography (or a derivative thereof) to determine the placement of features...sensed, and corrections are fed back to the beam-control electronics to cancel errors in the beam’s position. The virtue of interference lithography ...Sub-100nm, Maskless Deep-UV Zone-Plate Array Lithography Project Period: March 1, 2001 – February 28, 2004 F i n a l R e p o r t Army Research

Effects of directed written disclosure on grief and distress symptoms among bereaved individuals.

PubMed

Lichtenthal, Wendy G; Cruess, Dean G

2010-07-01

Bereavement-specific written disclosure trials have generally demonstrated null effects, but these studies have not directed the focus of writing. This randomized controlled trial compared directed writing that focused on either sense-making or benefit-finding, both associated with adjustment to loss, to traditional, non-directed emotional disclosure and a control condition. Bereaved undergraduates (n = 68) completed three 20-min writing sessions over 1 week. Intervention effects were found on prolonged grief disorder, depressive, and posttraumatic stress symptoms 3 months postintervention, and the benefit-finding condition appeared particularly efficacious. Physical health improved over time in all treatment groups. Findings suggested that directing written disclosure on topics associated with adjustment to bereavement may be useful for grieving individuals.

EFFECTS OF DIRECTED WRITTEN DISCLOSURE ON GRIEF AND DISTRESS SYMPTOMS AMONG BEREAVED INDIVIDUALS

PubMed Central

LICHTENTHAL, WENDY G.; CRUESS, DEAN G.

2013-01-01

Bereavement-specific written disclosure trials have generally demonstrated null effects, but these studies have not directed the focus of writing. This randomized controlled trial compared directed writing that focused on either sense-making or benefit-finding, both associated with adjustment to loss, to traditional, non-directed emotional disclosure and a control condition. Bereaved undergraduates (n = 68) completed three 20-min writing sessions over 1 week. Intervention effects were found on prolonged grief disorder, depressive, and posttraumatic stress symptoms 3 months postintervention, and the benefit-finding condition appeared particularly efficacious. Physical health improved over time in all treatment groups. Findings suggested that directing written disclosure on topics associated with adjustment to bereavement may be useful for grieving individuals. PMID:24482856

The Effects of Stimulus Writing Modality To Produce Writing Fluency in the Primary Grades.

ERIC Educational Resources Information Center

Duross, Christine; And Others

An action research project set out to increase students' writing fluency and investigate whether writing fluency varies as a function of writing prompts and directions given to students. Subjects were 62 students in a first-grade class, a second-grade class, and a fifth/sixth-grade Special Day class (all in this class are learning disabled) in a…

"Our Zoo to You": The Link between Zoo Animals in the Classroom and Science and Literacy Concepts in First-Grade Journal Writing

ERIC Educational Resources Information Center

Wilson, Kathleen; Trainin, Guy; Laughridge, Virginia; Brooks, David; Wickless, Mimi

2011-01-01

This study examined first-grade students' journal writing to determine how placing live zoo animals in classrooms for science education links to students' emergent and early writing. Students were asked to write journal entries during the daily language arts period. Although no direct instruction in informational text writing was offered, teachers…

Writing a Writing Assessment: Saying What You Want to Say Isn't as Simple as It Seems.

ERIC Educational Resources Information Center

Escoe, Adrienne

Since acceptable writing is essential to success in job training programs and in many entry-level jobs, a writing sample was included in the Training and Employment Prerequisites Survey, a multiple-choice test about skills like mechanics, usage, and spelling. The two writing prompts asked students to give directions for finding a location in a…

"Why are Your Kids Writing during Reading Time?"

ERIC Educational Resources Information Center

Harp, Bill

1987-01-01

Presents a hypothetical situation of an elementary school principal's concern at students writing during reading time, and offers a possible teacher's response with information about the direct tie between writing and reading improvement. (JC)

Japanese citizens' attitude toward end-of-life care and advance directives: A qualitative study for members of medical cooperatives.

PubMed

Hirayama, Yoko; Otani, Takashi; Matsushima, Masato

2017-12-01

Japanese citizens are interested in choosing their own end-of-life care, but few have created their own advance directive. This study examined changes among Japanese citizens' attitudes toward end-of-life care and advance directives and explored factors that affected these attitudes. We conducted five focus groups with 48 participants in 2009 and 2010. All participants were members of health cooperatives in Tokyo. We identified many barriers and reasons for creating and writing down advance directives. Experience caring for dying people and having a serious disease affected attitudes toward advance directives. Some participants changed their attitude toward end-of-life care by writing their own advance directive. When someone is writing advance directives, asking about his/her past experience of caring may be helpful. And learning about or filling out advance directives may help to break down resistance to using these documents.

Moore's law, lithography, and how optics drive the semiconductor industry

NASA Astrophysics Data System (ADS)

Hutcheson, G. Dan

2018-03-01

When the subject of Moore's Law arises, the important role that lithography plays and how advances in optics have made it all possible is seldom brought up in the world outside of lithography itself. When lithography is mentioned up in the value chain, it's often a critique of how advances are coming too slow and getting far too expensive. Yet advances in lithography are at the core of how Moore's Law is viable. This presentation lays out how technology and the economics of optics in manufacturing interleave to drive the immense value that semiconductors have brought to the world by making it smarter. Continuing these advances will be critical as electronics make the move from smart to cognitive.

Compact 2D OPC modeling of a metal oxide EUV resist for a 7nm node BEOL layer

NASA Astrophysics Data System (ADS)

Lyons, Adam; Rio, David; Lee, Sook; Wallow, Thomas; Delorme, Maxence; Fumar-Pici, Anita; Kocsis, Michael; de Schepper, Peter; Greer, Michael; Stowers, Jason K.; Gillijns, Werner; De Simone, Danilo; Bekaert, Joost

2017-03-01

Inpria has developed a directly patternable metal oxide hard-mask as a high-resolution photoresist for EUV lithography1. In this contribution, we describe a Tachyon 2D OPC full-chip model for an Inpria resist as applied to an N7 BEOL block mask application.

Directed Self-Assembly of Polystyrene- b -poly(propylene carbonate) on Chemical Patterns via Thermal Annealing for Next Generation Lithography

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Guan-Wen; Wu, Guang-Peng; Chen, Xuanxuan

2017-01-23

Directed self-assembly (DSA) of block copolymers (BCPs) combines advantages of conventional photolithography and polymeric materials and shows competence in semiconductors and data storage applications. Driven by the more integrated, much smaller and higher performance of the electronics, however, the industry standard polystyrene-block-poly(methyl methacrylate) (PS-b-PMM.A) in DSA strategy cannot meet the rapid development of lithography technology because its intrinsic limited Flory-Huggins interaction parameter (chi). Despite hundreds of block copolymers have been developed, these BCPs systems are usually subject to a trade-off between high chi and thermal treatment, resulting in incompatibility with the current nanomanufacturing fab processes. Here we discover that polystyrene-b-poly(propylenemore » carbonate) (PS-b-PPC) is well qualified to fill key positions on DSA strategy for the next-generation lithography. The estimated chi-value for PS-b-PPC is 0.079, that is, two times greater than PS-b-PMMA (chi = 0.029 at 150 degrees C), while processing the ability to form perpendicular sub-10 nm morphologies (cylinder and lamellae) via the industry preferred thermal-treatment. DSA of lamellae forming PS-b-PPC on chemoepitaxial density multiplication demonstrates successful sub-10 nm long-range order features on large-area patterning for nanofabrication. Pattern transfer to the silicon substrate through industrial sequential infiltration synthesis is also implemented successfully. Compared with the previously reported methods to orientation control BCPs with high chi-value (including solvent annealing, neutral top-coats, and chemical modification), the easy preparation, high chi value, and etch selectivity while enduring thermal treatment demonstrates PS-b-PPC as a rare and valuable candidate for advancing the field of nanolithography.« less

Discovering the Common Grading Preferences, Patterns, and Policies of Those Who Assess Writing

ERIC Educational Resources Information Center

Chowske, Rebecca Dunn

2013-01-01

Although considerable attention has been directed at improving the quality of students' writing, the investigation and definition of "good writing" has remained primarily within the realm of the normative and prescriptive. Social scientists and humanists often clash over the definition of valid and reliable writing assessment, as well as…

The Role of Cognitive and Affective Factors in Measures of L2 Writing

ERIC Educational Resources Information Center

Zabihi, Reza

2018-01-01

This study investigates the direct and/or indirect effects of some cognitive (working memory capacity) and affective (writing anxiety and writing self-efficacy) variables on the complexity, accuracy, and fluency (CAF) of second language (L2) learners' writings. To achieve this goal, 232 upper-intermediate English learners performed an automated…

Virtual and Material Buildings: Construction and Constructivism in Architecture and Writing.

ERIC Educational Resources Information Center

Medway, Peter

1996-01-01

Endorses recent arguments for more study of writing that shapes and directs the production of material artifacts and for considering writing as one semiotic mode among others. Considers a case of "nonwritten" symbolic production, architectural design, for what it may suggest for the study and teaching of writing. (TB)

Comparing Two Methods of Writing Instruction: Effects on Kindergarten Students' Reading Skills

ERIC Educational Resources Information Center

Jones, Cindy D'on; Reutzel, D. Ray; Fargo, Jamison D.

2010-01-01

This experimental study directly compared the effects of two prevalent forms of classroom writing instruction, interactive writing and writing workshop, on kindergarten students' acquisition of early reading skills. Repeated measures data was collected at four points over 16 weeks to monitor growth of 151 kindergarten students in phonological…

The Consequences of Writing: Enhancing Learning in the Disciplines.

ERIC Educational Resources Information Center

Parker, Robert P.; Goodkin, Vera

Intended for teachers of grades 7-16, this book discusses "heuristic" writing--writing that produces new, irreversible knowledge for the writer leading to a fuller understanding of the self and of the act of writing--as well as principles and practices having direct implications for a wide range of students. Chapter 1 examines the…

Fast and Scalable Fabrication of Microscopic Optical Surfaces and its Application for Optical Interconnect Devices

NASA Astrophysics Data System (ADS)

Summitt, Christopher Ryan

The use of optical interconnects is a promising solution to the increasing demand for high speed mass data transmission used in integrated circuits as well as device to device data transfer applications. For the purpose, low cost polymer waveguides are a popular choice for routing signal between devices due to their compatibility with printed circuit boards. In optical interconnect, coupling from an external light source to such waveguides is a critical step, thus a variety of couplers have been investigated such as grating based couplers [1,2], evanescent couplers [3], and embedded mirrors [4-6]. These couplers are inherently micro-optical components which require fast and scalable fabrication for mass production with optical quality surfaces/structures. Low NA laser direct writing has been used for fast fabrication of structures such as gratings and Fresnel lenses using a linear laser direct writing scheme, though the length scale of such structures are an order of magnitude larger than the spot size of the focused laser of the tool. Nonlinear writing techniques such as with 2-photon absorption offer increased write resolution which makes it possible to fabricate sub-wavelength structures as well as having a flexibility in feature shape. However it does not allow a high speed fabrication and in general are not scalable due to limitations of speed and area induced by the tool's high NA optics. To overcome such limitations primarily imposed by NA, we propose a new micro-optic fabrication process which extends the capabilities of 1D, low NA, and thus fast and scalable, laser direct writing to fabricate a structure having a length scale close to the tool's spot size, for example, a mirror based and 45 degree optical coupler with optical surface quality. The newly developed process allows a high speed fabrication with a write speed of 2600 mm²/min by incorporating a mask based lithography method providing a blank structure which is critical to creating a 45 degree slope to form the coupler surface. In this method, instead of using an entire exposure in a pixelated manner, only a portion of the Gaussian profile is used, allowing a reduced surface roughness and better control of the surface shape than previously possible with this low NA beam. The surface figure of the mirror is well controlled below 0.04 waves in root-mean-square (RMS) at 1.55 mum wavelength, with mirror angle of 45+/-1 degrees. The coupling efficiency is evaluated using a set of polymer waveguides fabricated on the same substrate as the complete proof of concept device. Device insertion loss was measured using a custom built optical test station and a detailed loss analysis was completed to characterize the optical coupling efficiency of the mirror. Surface roughness and angle were also experimentally confirmed. This process opens up a pathway towards large volume fabrication of free-form and high aspect ratio optical components which have not yet pursued, along with well-defined optical structures on a single substrate. In this dissertation, in Chapter 1, we provide an overview of optical surface fabrication in conjunction with current state of the art on fabrication of free form surfaces in macro and microscopic length scale. The need for optical interconnects is introduced and fabrication methods of micro-optical couplers are reviewed in Chapter 2. In Chapter 3, the complete fabrication process of a mirror based coupler is presented including a custom alignment procedure. In Chapter 4, we provide the integration procedure of the optical couplers with waveguides. In Chapter 5, the alignment of two-lithographic methods is discussed. In Chapter 6, we provide the fabrication procedure used for the waveguides. In Chapter 7, the experimental evaluation and testing of the optical coupler is described. We present a custom test station used for angle verification and optical coupler efficiency measurement. In Chapter 8, a detailed loss analysis of the device is presented including suggestions for future reductions in loss. Conclusions and future work considerations are addressed in Chapter 9.

Writing instruction in kindergarten: examining an emerging area of research for children with writing and reading difficulties.

PubMed

Edwards, Lana

2003-01-01

This review examines the literature on how to teach kindergarten children with reading and writing difficulties how to write. Specifically, research on handwriting instruction, spelling instruction, and composition writing is discussed. Due to the limited number of empirical studies on writing that included kindergarten students with diagnosed reading and writing difficulties, selected studies conducted with the full range of kindergarten children, as well as studies conducted in the early elementary grades, are presented to highlight future directions for research.

Materials Research Society Symposium Proceedings, Volume 758 Held in Boston, Massachusetts on December 3-5, 2002. Rapid Prototyping Technologies

DTIC Science & Technology

2003-04-01

lithography to associate curved and conical structures with the smooth and vertical walls and micrometer accuracy of SU-8 technology [24]. It has been...Sintering (SLS) -3D O Stereolithography (SLA) - 3D Systems Systems Curing with Visible Light and DMD Melting with Lasers 0 Direct Photo Shaping (DPS...LAM) - AeroMet Electrolyte 0 Direct Metal Dep. ( DMD ) - POM Electroplating * Electrochemical Fab. (EFAB) - USC BINDER-based Drop Binding Powder Printing

Control of magnetic anisotropy in (Ga,Mn)as by lithography-induced strain relaxation.

PubMed

Wenisch, J; Gould, C; Ebel, L; Storz, J; Pappert, K; Schmidt, M J; Kumpf, C; Schmidt, G; Brunner, K; Molenkamp, L W

2007-08-17

We report control of magnetic anisotropy in epitaxial (Ga,Mn)As by anisotropic strain relaxation in patterned structures. The strain in the structures is characterized using reciprocal space mapping by x-ray techniques. The magnetic anisotropy before patterning of the layer, which shows biaxial easy axes along [100] and [010], is replaced by a hard axis in the direction of large elastic strain relaxation and a uniaxial easy axis in the direction where pseudomorphic conditions are retained.

Carbon Nanotube Based Nano-Electro-Mechanical Systems (NEMS)

NASA Technical Reports Server (NTRS)

Han, Jie; Dai, Hongjie; Saini, Subhash

1998-01-01

Carbon nanotubes (CNT) enable nanoelectromechanical systems (NEMS) because of their inherent nanostructure, intrinsic electric conductivity and mechanical resilience. The collaborative work between Stanford (experiment) and NASA Ames (theory and simulation) has made progress in two types of CNT based NEMS for nanoelectronics and sensor applications. The CNT tipped scanning probe microscopy (SPM) is a NEMS in which CNT tips are used for nanoscale probing, imaging and manipulating. It showed great improvement in probing surfaces and biological systems over conventional tips. We have recently applied it to write (lithography) and read (image) uniform SiO2 lines on large Si surface area at speed up to 0.5 mm per s. Preliminary work using approximately 10 nm multiwall nanotube tips produced approximately 10 nm structures and showed that the CNT tips didn't wear down when crashed as conventional tips often do. This presents a solution to the long standing tip-wear problem in SPM nanolithography. We have also explored potential of CNT tips in imaging DNA in water. Preliminary experiment using 10 nm CNT tips reached 5 nm resolution. The 1 nm nanolithography and 1 nm DNA imaging can be expected by using approximately 1 nm CNT tips. In contrast to CNT tipped SPM, we also fabricated CNT devices on silicon wafer in which CNTs connect patterned metallic lines on SiO2/Si by a simple chemical vapor deposition process. Using conventional lithography for silicon wafer, we have been able to obtain CNT based transistors and sensors. Investigations of the CNT NEMS as physical, biological and chemical sensors are in progress and will be discussed.

Mask CD relationship to temperature at the time backscatter is received

NASA Astrophysics Data System (ADS)

Zable, Harold; Kronmiller, Tom; Pearman, Ryan; Guthrie, Bill; Shirali, Nagesh; Masuda, Yukihiro; Kamikubo, Takashi; Nakayamada, Noriaki; Fujimura, Aki

2017-07-01

Mask writers need to be able to write sub-50nm features accurately. Nano-imprint lithography (NIL) masters need to create sub-20nm line and space (L:S) patterns reliably. Increasingly slower resists are deployed, but mask write times need to remain reasonable. The leading edge EBM-9500 offers 1200A/cm2 current density to shoot variable shaped beam (VSB) to write the masks. Last year, thermal effect correction (TEC) was introduced by NuFlare in the EBM-95001. It is a GPU-accelerated inline correction for the effect that the temperature of the resist has on CD. For example, a 100nm CD may print at 102nm where that area was at a comparably high temperature at the time of the shot. Since thermal effect is a temporal effect, the simulated temperature of the surface of the mask is dynamically updated for the effect of each shot in order to accurately predict the cumulative effect that is the temperature at the location of the shot at the time of the shot and therefore its impact on CD. The shot dose is changed to reverse the effects of the temperature change. This paper for the first time reveals an enhancement to this thermal model and a simulator for it. It turns out that the temperature at the time each location receives backscatter from other shots also make a difference to the CD. The effect is secondary, but still measurable for some resists and substrates. Results of a test-chip study will be presented. The computation required for the backscatter effect is substantial. It has been demonstrated that this calculation can be performed fast enough to be inline with the EBM-9500 with a reasonable-sized computing platform. Run-time results and the computing architecture will be presented.

Photo-Induced Click Chemistry for DNA Surface Structuring by Direct Laser Writing.

PubMed

Kerbs, Antonina; Mueller, Patrick; Kaupp, Michael; Ahmed, Ishtiaq; Quick, Alexander S; Abt, Doris; Wegener, Martin; Niemeyer, Christof M; Barner-Kowollik, Christopher; Fruk, Ljiljana

2017-04-11

Oligonucleotides containing photo-caged dienes were prepared and shown to react quantitatively in a light-induced Diels-Alder cycloaddition with functional maleimides in aqueous solution within minutes. Due to its high yield and fast rate, the reaction was exploited for DNA surface patterning with sub-micrometer resolution employing direct laser writing (DLW). Functional DNA arrays were written by direct laser writing (DLW) in variable patterns, which were further encoded with fluorophores and proteins through DNA directed immobilization. This mild and efficient light-driven platform technology holds promise for the fabrication of complex bioarrays with sub-micron resolution. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Teaching High School Students How to Write: The Importance of Direct Explicit Instruction and Teacher Training

ERIC Educational Resources Information Center

Soiferman, L. Karen

2017-01-01

Learning how to teach writing is a skill just as learning how to write is a skill. Without a dedicated composition course in Education faculties pre-service teachers are not getting the training they require to be effective teachers of writing. In this report, a case is made for why teachers have to be more aware of how students learn to write and…

Apparatus and methods for memory using in-plane polarization

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Junwei; Chang, Kai; Ji, Shuai-Hua

A memory device includes a semiconductor layer with an in-plane polarization component switchable between a first direction and a second direction. A writing electrode is employed to apply a writing voltage to the semiconductor layer to change the in-plane polarization component between the first direction and the second direction. A reading electrode is employed to apply a reading voltage to the semiconductor layer to measure a tunneling current substantially perpendicular to the polarization direction of the in-plane polarization component. The directions of the reading voltage and the writing voltage are substantially perpendicular to each other. Therefore, the reading process ismore » non-destructive. Thin films (e.g., one unit cell thick) of ferroelectric material can be used in the memory device to increase the miniaturization of the device.« less

Micro-fabrication method of graphite mesa microdevices based on optical lithography technology

NASA Astrophysics Data System (ADS)

Zhang, Cheng; Wen, Donghui; Zhu, Huamin; Zhang, Xiaorui; Yang, Xing; Shi, Yunsheng; Zheng, Tianxiang

2017-12-01

Graphite mesa microdevices have incommensurate contact nanometer interfaces, superlubricity, high-speed self-retraction, and other characteristics, which have potential applications in high-performance oscillators and micro-scale switches, memory devices, and gyroscopes. However, the current method of fabricating graphite mesa microdevices is mainly based on high-cost, low efficiency electron beam lithography technology. In this paper, the processing technologies of graphite mesa microdevices with various shapes and sizes were investigated by a low-cost micro-fabrication method, which was mainly based on optical lithography technology. The characterization results showed that the optical lithography technology could realize a large-area of patterning on the graphite surface, and the graphite mesa microdevices, which have a regular shape, neat arrangement, and high verticality could be fabricated in large batches through optical lithography technology. The experiments and analyses showed that the graphite mesa microdevices fabricated through optical lithography technology basically have the same self-retracting characteristics as those fabricated through electron beam lithography technology, and the maximum size of the graphite mesa microdevices with self-retracting phenomenon can reach 10 µm  ×  10 µm. Therefore, the proposed method of this paper can realize the high-efficiency and low-cost processing of graphite mesa microdevices, which is significant for batch fabrication and application of graphite mesa microdevices.

Changes in Teachers' Beliefs after a Professional Development Project for Teaching Writing: Two Chinese Cases

ERIC Educational Resources Information Center

Teng, Lin Sophie

2016-01-01

A plethora of research has found that teachers' beliefs directly influence their classroom practices and teaching outcomes. While numerous studies in second/foreign language writing have examined the effectiveness of different innovative approaches on students' learning to write, there is a paucity of research on writing teachers' beliefs about…

Operationalizing the Rubric: The Effect of Benchmark Selection on the Assessed Quality of Writing.

ERIC Educational Resources Information Center

Popp, Sharon E. Osborn; Ryan, Joseph M.; Thompson, Marilyn S.; Behrens, John T.

The purposes of this study were to investigate the role of benchmark writing samples in direct assessment of writing and to examine the consequences of differential benchmark selection with a common writing rubric. The influences of discourse and grade level were also examined within the context of differential benchmark selection. Raters scored…

Revision Strategies for Adolescent Writers: Moving Students in the Write Direction

ERIC Educational Resources Information Center

Borgese, Jolene; Heyler, Dick; Romano, Stephanie

2011-01-01

For many secondary students, writing effectively is the most elusive of the critical literacy skills needed for college and career readiness. And for many teachers, revision is the most difficult part of the writing process to tackle. How can adolescent writers be guided to revisit their work, to identify the weaknesses in their writing drafts,…

Reduce, Reuse, Recycle: Resources and Strategies for the Use of Writing Projects in Mathematics

ERIC Educational Resources Information Center

Latulippe, Joe; Latulippe, Christine

2014-01-01

As an often recommended but under-utilized pedagogical strategy, writing in mathematics has many benefits for students. However, creating and grading worthwhile writing projects can be more time-consuming than utilizing more traditional forms of assessment. This paper provides a concrete example of a writing project prompt, questions, directions,…

Improving Understanding in Ordinary Differential Equations through Writing in a Dynamical Environment

ERIC Educational Resources Information Center

Habre, Samer

2012-01-01

Research on writing in mathematics has shown that students learn more effectively in an environment that promotes this skill and that writing is most beneficial when it is directed at the learning aspect. Writing, however, necessitates proficiency on the part of the students that may not have been developed at earlier learning stages. Research has…

"The Dilemma That Still Counts": Basic Writing at a Political Crossroads.

ERIC Educational Resources Information Center

Harrington, Susanmarie; Adler-Kassner, Linda

1998-01-01

Reviews definitions of basic writers and basic writing over the last 20 years. Argues that basic writers are not defined only in terms of institutional convenience. Offers future directions for basic writing research, suggesting that to learn more about basic writers, researchers must return to studies of error informed by basic writing's rich…

Temperature-feedback direct laser reshaping of silicon nanostructures

NASA Astrophysics Data System (ADS)

Aouassa, M.; Mitsai, E.; Syubaev, S.; Pavlov, D.; Zhizhchenko, A.; Jadli, I.; Hassayoun, L.; Zograf, G.; Makarov, S.; Kuchmizhak, A.

2017-12-01

Direct laser reshaping of nanostructures is a cost-effective and fast approach to create or tune various designs for nanophotonics. However, the narrow range of required laser parameters along with the lack of in-situ temperature control during the nanostructure reshaping process limits its reproducibility and performance. Here, we present an approach for direct laser nanostructure reshaping with simultaneous temperature control. We employ thermally sensitive Raman spectroscopy during local laser melting of silicon pillar arrays prepared by self-assembly microsphere lithography. Our approach allows establishing the reshaping threshold of an individual nanostructure, resulting in clean laser processing without overheating of the surrounding area.

Patterned self-assembled monolayers for nanoscale lithography and the control of catalytically produced electroosmosis

NASA Astrophysics Data System (ADS)

Subramanian, Shyamala

This thesis explores two applications of self-assembled monolayers (SAMs) (a) for developing novel molecular assembly based nanolithography techniques and (b) for tailoring zeta-potential of surfaces towards achieving directional control of catalytically induced fluid flow. The first half of the thesis develops the process of molecular ruler lithography using sacrificial host structures. This is a novel hybrid nanolithography technique which combines chemical self-assembly with conventional fabrication methods for improving the resolution of existing lithography tools to sub-50 nm. Previous work related to molecular ruler lithography have shown the use of thiol-SAMs, placed one on top of the other like a molecular resist, for scaling down feature sizes. In this thesis various engineering solutions for improving the reproducibility, yield, nanoscale roughness and overall manufacturability of the process are introduced. This is achieved by introducing a sacrificial inert layer underneath the gold parent structure. This bilayer sacrificial host allows for preferential, easy and quick removal of the parent structures, isolates the parent metal from the underlying substrate and improves reproducibility of the lift-off process. Also it opens avenues for fabrication of high aspect ratio features. Also molecular layer vapor deposition method is developed for building the multilayer molecular resist via vapor phase to reduce contaminations and yield issues associated with solution phase deposition. The smallest isolated metal features produced using this process were 40 nm in width. The second half of the thesis describes application of thiol-SAMs to tailor surface properties of gold, specifically the surface charge or zeta potential. Previous work has demonstrated that the direction of movement of fluid in the vicinity of a catalytically active bimetallic junction placed in a solution of dilute hydrogen peroxide depends on the charge of the gold surface. SAMs with different end-group functionality impart different surface zeta potential to the gold surface. Zeta-potential engineering via patterning various end-group functionalized SAMs on gold surface to control direction of catalytically induced electroosmotic fluid flow is demonstrated for the first time. This work also describes the application of catalytic power to produce controlled rotational motion. Gold gears-like structures made using conventional microfabrication techniques and propelled by catalytic power are shown to rotate at speeds of 1 rotation/sec in a dilute solution of hydrogen peroxide. Fabrication of a force sensor for detection and measurement of catalytic forces is also introduced. The force sensor, with sensitivity in the piconewton range, consists of a microcantilever with a catalytically active silver post patterned on the tip. Changes in cantilever displacement and resonance frequency due to the catalytic force were monitored as a function of concentration of hydrogen peroxide. Overall, this thesis integrates SAM deposition and patterning techniques with conventional fabrication methods to engineer and control nanoscale structures and devices. Possible future device designs are described including CMOS devices having channel width defined using molecular ruler lithography with sacrificial hosts, drug delivery device based on AFM force sensor and channeless pumps powered by catalytic reactions with SAM controlled electroosmotic fluid flow.

Tuning and Freezing Disorder in Photonic Crystals using Percolation Lithography.

PubMed

Burgess, Ian B; Abedzadeh, Navid; Kay, Theresa M; Shneidman, Anna V; Cranshaw, Derek J; Lončar, Marko; Aizenberg, Joanna

2016-01-21

Although common in biological systems, synthetic self-assembly routes to complex 3D photonic structures with tailored degrees of disorder remain elusive. Here we show how liquids can be used to finely control disorder in porous 3D photonic crystals, leading to complex and hierarchical geometries. In these optofluidic crystals, dynamically tunable disorder is superimposed onto the periodic optical structure through partial wetting or evaporation. In both cases, macroscopic symmetry breaking is driven by subtle sub-wavelength variations in the pore geometry. These variations direct site-selective infiltration of liquids through capillary interactions. Incorporating cross-linkable resins into our liquids, we developed methods to freeze in place the filling patterns at arbitrary degrees of partial wetting and intermediate stages of drying. These percolation lithography techniques produced permanent photonic structures with adjustable disorder. By coupling strong changes in optical properties to subtle differences in fluid behavior, optofluidic crystals may also prove useful in rapid analysis of liquids.

Lattice properties of the Phase I BNL x-ray lithography source obtained from fits to magnetic measurement data

DOE Office of Scientific and Technical Information (OSTI.GOV)

Blumberg, L.N.; Murphy, J.B.; Reusch, M.F.

1991-01-01

The orbit, tune, chromaticity and {beta} values for the Phase 1 XLS ring were computed by numerical integration of equations of motion using fields obtained from the coefficients of the 3-dimensional solution of Laplace's Equation evaluated by fits to magnetic measurements. The results are in good agreement with available data. The method has been extended to higher order fits of TOSCA generated fields in planes normal to the reference axis using the coil configuration proposed for the Superconducting X-Ray Lithography Source. Agreement with results from numerical integration through fields given directly by TOSCA is excellent. The formulation of the normalmore » multipole expansion presented by Brown and Servranckx has been extended to include skew multipole terms. The method appears appropriate for analysis of magnetic measurements of the SXLS. 8 refs. , 2 figs., 2 tabs.« less

Demonstration of an N7 integrated fab process for metal oxide EUV photoresist

NASA Astrophysics Data System (ADS)

De Simone, Danilo; Mao, Ming; Kocsis, Michael; De Schepper, Peter; Lazzarino, Frederic; Vandenberghe, Geert; Stowers, Jason; Meyers, Stephen; Clark, Benjamin L.; Grenville, Andrew; Luong, Vinh; Yamashita, Fumiko; Parnell, Doni

2016-03-01

Inpria has developed a directly patternable metal oxide hard-mask as a robust, high-resolution photoresist for EUV lithography. In this paper we demonstrate the full integration of a baseline Inpria resist into an imec N7 BEOL block mask process module. We examine in detail both the lithography and etch patterning results. By leveraging the high differential etch resistance of metal oxide photoresists, we explore opportunities for process simplification and cost reduction. We review the imaging results from the imec N7 block mask patterns and its process windows as well as routes to maximize the process latitude, underlayer integration, etch transfer, cross sections, etch equipment integration from cross metal contamination standpoint and selective resist strip process. Finally, initial results from a higher sensitivity Inpria resist are also reported. A dose to size of 19 mJ/cm2 was achieved to print pillars as small as 21nm.

Vitreous carbon mask substrate for X-ray lithography

DOEpatents

Aigeldinger, Georg [Livermore, CA; Skala, Dawn M [Fremont, CA; Griffiths, Stewart K [Livermore, CA; Talin, Albert Alec [Livermore, CA; Losey, Matthew W [Livermore, CA; Yang, Chu-Yeu Peter [Dublin, CA

2009-10-27

The present invention is directed to the use of vitreous carbon as a substrate material for providing masks for X-ray lithography. The new substrate also enables a small thickness of the mask absorber used to pattern the resist, and this enables improved mask accuracy. An alternative embodiment comprised the use of vitreous carbon as a LIGA substrate wherein the VC wafer blank is etched in a reactive ion plasma after which an X-ray resist is bonded. This surface treatment provides a surface enabling good adhesion of the X-ray photoresist and subsequent nucleation and adhesion of the electrodeposited metal for LIGA mold-making while the VC substrate practically eliminates secondary radiation effects that lead to delamination of the X-ray resist form the substrate, the loss of isolated resist features, and the formation of a resist layer adjacent to the substrate that is insoluble in the developer.

Method for nanomachining high aspect ratio structures

DOEpatents

Yun, Wenbing; Spence, John; Padmore, Howard A.; MacDowell, Alastair A.; Howells, Malcolm R.

2004-11-09

A nanomachining method for producing high-aspect ratio precise nanostructures. The method begins by irradiating a wafer with an energetic charged-particle beam. Next, a layer of patterning material is deposited on one side of the wafer and a layer of etch stop or metal plating base is coated on the other side of the wafer. A desired pattern is generated in the patterning material on the top surface of the irradiated wafer using conventional electron-beam lithography techniques. Lastly, the wafer is placed in an appropriate chemical solution that produces a directional etch of the wafer only in the area from which the resist has been removed by the patterning process. The high mechanical strength of the wafer materials compared to the organic resists used in conventional lithography techniques with allows the transfer of the precise patterns into structures with aspect ratios much larger than those previously achievable.

Large-Scale Direct-Writing of Aligned Nanofibers for Flexible Electronics.

PubMed

Ye, Dong; Ding, Yajiang; Duan, Yongqing; Su, Jiangtao; Yin, Zhouping; Huang, Yong An

2018-05-01

Nanofibers/nanowires usually exhibit exceptionally low flexural rigidities and remarkable tolerance against mechanical bending, showing superior advantages in flexible electronics applications. Electrospinning is regarded as a powerful process for this 1D nanostructure; however, it can only be able to produce chaotic fibers that are incompatible with the well-patterned microstructures in flexible electronics. Electro-hydrodynamic (EHD) direct-writing technology enables large-scale deposition of highly aligned nanofibers in an additive, noncontact, real-time adjustment, and individual control manner on rigid or flexible, planar or curved substrates, making it rather attractive in the fabrication of flexible electronics. In this Review, the ground-breaking research progress in the field of EHD direct-writing technology is summarized, including a brief chronology of EHD direct-writing techniques, basic principles and alignment strategies, and applications in flexible electronics. Finally, future prospects are suggested to advance flexible electronics based on orderly arranged EHD direct-written fibers. This technology overcomes the limitations of the resolution of fabrication and viscosity of ink of conventional inkjet printing, and represents major advances in manufacturing of flexible electronics. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

High quality digital holographic reconstruction on analog film

NASA Astrophysics Data System (ADS)

Nelsen, B.; Hartmann, P.

2017-05-01

High quality real-time digital holographic reconstruction, i.e. at 30 Hz frame rates, has been at the forefront of research and has been hailed as the holy grail of display systems. While these efforts have produced a fascinating array of computer algorithms and technology, many applications of reconstructing high quality digital holograms do not require such high frame rates. In fact, applications such as 3D holographic lithography even require a stationary mask. Typical devices used for digital hologram reconstruction are based on spatial-light-modulator technology and this technology is great for reconstructing arbitrary holograms on the fly; however, it lacks the high spatial resolution achievable by its analog counterpart, holographic film. Analog holographic film is therefore the method of choice for reconstructing highquality static holograms. The challenge lies in taking a static, high-quality digitally calculated hologram and effectively writing it to holographic film. We have developed a theoretical system based on a tunable phase plate, an intensity adjustable high-coherence laser and a slip-stick based piezo rotation stage to effectively produce a digitally calculated hologram on analog film. The configuration reproduces the individual components, both the amplitude and phase, of the hologram in the Fourier domain. These Fourier components are then individually written on the holographic film after interfering with a reference beam. The system is analogous to writing angularly multiplexed plane waves with individual component phase control.

Direct nanoimprint lithography of Al2O3 using a chelated monomer-based precursor

NASA Astrophysics Data System (ADS)

Ganesan, Ramakrishnan; Safari Dinachali, Saman; Lim, Su Hui; Saifullah, M. S. M.; Tit Chong, Wee; Lim, Andrew H. H.; Jie Yong, Jin; San Thian, Eng; He, Chaobin; Low, Hong Yee

2012-08-01

Nanostructuring of Al2O3 is predominantly achieved by the anodization of aluminum film and is limited to obtaining porous anodized aluminum oxide (AAO). One of the main restrictions in developing approaches for direct fabrication of various types of Al2O3 patterns, such as lines, pillars, holes, etc, is the lack of a processable aluminum-containing resist. In this paper, we demonstrate a stable precursor prepared by reacting aluminum tri-sec-butoxide with 2-(methacryloyloxy)ethyl acetoacetate, a chelating monomer, which can be used for large area direct nanoimprint lithography of Al2O3. Chelation in the precursor makes it stable against hydrolysis whilst the presence of a reactive methacrylate group renders it polymerizable. The precursor was mixed with a cross-linker and their in situ thermal free-radical co-polymerization during nanoimprinting rigidly shaped the patterns, trapped the metal atoms, reduced the surface energy and strengthened the structures, thereby giving a ˜100% yield after demolding. The imprinted structures were heat-treated, leading to the loss of organics and their subsequent shrinkage. Amorphous Al2O3 patterns with line-widths as small as 17 nm were obtained. Our process utilizes the advantages of sol-gel and methacrylate routes for imprinting and at the same time alleviates the disadvantages associated with both these methods. With these benefits, the chelating monomer route may be the harbinger of the universal scheme for direct nanoimprinting of metal oxides.

Virtually distortion-free imaging system for large field, high resolution lithography

DOEpatents

Hawryluk, A.M.; Ceglio, N.M.

1993-01-05

Virtually distortion free large field high resolution imaging is performed using an imaging system which contains large field distortion or field curvature. A reticle is imaged in one direction through the optical system to form an encoded mask. The encoded mask is then imaged back through the imaging system onto a wafer positioned at the reticle position.

Virtually distortion-free imaging system for large field, high resolution lithography

DOEpatents

Hawryluk, Andrew M.; Ceglio, Natale M.

1993-01-01

Virtually distortion free large field high resolution imaging is performed using an imaging system which contains large field distortion or field curvature. A reticle is imaged in one direction through the optical system to form an encoded mask. The encoded mask is then imaged back through the imaging system onto a wafer positioned at the reticle position.

Hollow spheres: crucial building blocks for novel nanostructures and nanophotonics

NASA Astrophysics Data System (ADS)

Zhong, Kuo; Song, Kai; Clays, Koen

2018-03-01

In this review, we summarize the latest developments in research specifically derived from the unique properties of hollow microspheres, in particular, hollow silica spheres with uniform shells. We focus on applications in nanosphere (colloidal) lithography and nanophotonics. The lithography from a layer of hollow spheres can result in nanorings, from a multilayer in unique nano-architecture. In nanophotonics, disordered hollow spheres can result in antireflection coatings, while ordered colloidal crystals (CCs) of hollow spheres exhibit unique refractive index enhancement upon infiltration, ideal for optical sensing. Furthermore, whispering gallery mode (WGM) inside the shell of hollow spheres has also been demonstrated to enhance light absorption to improve the performance of solar cells. These applications differ from the classical applications of hollow spheres, based only on their low density and large surface area, such as catalysis and chemical sensing. We provide a brief overview of the synthesis and self-assembly approaches of the hollow spheres. We elaborate on their unique optical features leading to defect mode lasing, optomicrofluidics, and the existence of WGMs inside shell for light management. Finally, we provide a perspective on the direction towards which future research relevant to hollow spheres might be directed.

The role of tortuosity on ion conduction in block copolymer electrolyte thin films

NASA Astrophysics Data System (ADS)

Kambe, Yu; Arges, Christopher G.; Nealey, Paul F.

This talk discusses the role of grain tortuosity on ion conductivity in block copolymer electrolyte (BCE) thin films. In particular, we studied lamellae forming BCEs with both domains oriented perpendicular to the substrate surface and connected directly from one electrode to another - i.e., tortuosity of one. The BCE is composed of ion-conducting, poly(2-vinyl n-methylpyridinium) blocks and non-ionic polystyrene blocks. Prior to creating the BCE, the pristine block copolymer, poly(styrene- b-2-vinyl pyridine), was directly self-assembled (DSA) on topographical or chemical patterns via graphoepitaxy and chemoepitaxy. A chemical vapor infiltration reaction modified the P2VP block into positively charged, fixed quaternary ammonium groups paired with mobile counteranions. The graphoepitaxy process utilized topographical interdigitated gold nanoelectrodes (100s of nanometers spacing between electrodes) created via e-beam lithography. Alternatively, chemical patterns had gold electrodes incorporated into them with 10s to 100s of microns spacing using conventional optical lithography. The interdigitated gold electrodes enabled in-plane ion conductivity measurements of the DSA BCEs to study the role of grain tortuosity on ion conductivity. U.S. Department of Energy Office of Science: Contract No. DE-AC02-06CH11357.

Doppler Effect on Structure Period of Nonlinear Laser Lithography

NASA Astrophysics Data System (ADS)

Yavuz, Ozgun; Kara, Semih; Tokel, Onur; Pavlov, Ihor; Ilday, Fatih Omer

Recently, Nonlinear Laser Lithography (NLL) was developed for large-area, nanopatterning of surfaces. In NLL, nanopatterns emerge through coherent scattering of the laser from the surface, and its interference with the incident beam. The period of the structures is determined by the laser wavelength. It has been shown by Sipe that the period depends on the laser incidence angle (θ) as λ / (1 +/- sinθ). Here, we show that the period not only depends on this angle, but also on the polarisation angle. We update the Sipe equation as λ / (1 +/- sinθsinα) , where ' α' is the angle between scanning direction and polarisation. The physical reason behind this is found through a formal analogy to Doppler effect. In Doppler effect, the measured wavelength of a moving emitter is given as λ / (1 +/- c / vsinθ) , where ' θ'is the angle between observer and the direction of emitter, 'c' is the speed of observer, 'v' is speed of source. In NLL, velocity of source can be written as vsinθ , and the period equation can be shown to take its new form. We believe that this is the first application of Doppler effect in laser-processing of solid materials.

Atomic layer deposition on phase-shift lithography generated photoresist patterns for 1D nanochannel fabrication.

PubMed

Güder, Firat; Yang, Yang; Krüger, Michael; Stevens, Gregory B; Zacharias, Margit

2010-12-01

A versatile, low-cost, and flexible approach is presented for the fabrication of millimeter-long, sub-100 nm wide 1D nanochannels with tunable wall properties (wall thickness and material) over wafer-scale areas on glass, alumina, and silicon surfaces. This approach includes three fabrication steps. First, sub-100 nm photoresist line patterns were generated by near-field contact phase-shift lithography (NFC-PSL) using an inexpensive homemade borosilicate mask (NFC-PSM). Second, various metal oxides were directly coated on the resist patterns with low-temperature atomic layer deposition (ALD). Finally, the remaining photoresist was removed via an acetone dip, and then planar nanochannel arrays were formed on the substrate. In contrast to all the previous fabrication routes, the sub-100 nm photoresist line patterns produced by NFC-PSL are directly employed as a sacrificial layer for the creation of nanochannels. Because both the NFC-PSL and the ALD deposition are highly reproducible processes, the strategy proposed here can be regarded as a general route for nanochannel fabrication in a simplified and reliable manner. In addition, the fabricated nanochannels were used as templates to synthesize various organic and inorganic 1D nanostructures on the substrate surface.

Using Laser-Induced Thermal Voxels to Pattern Diverse Materials at the Solid-Liquid Interface.

PubMed

Zarzar, Lauren D; Swartzentruber, B S; Donovan, Brian F; Hopkins, Patrick E; Kaehr, Bryan

2016-08-24

We describe a high-resolution patterning approach that combines the spatial control inherent to laser direct writing with the versatility of benchtop chemical synthesis. By taking advantage of the steep thermal gradient that occurs while laser heating a metal edge in contact with solution, diverse materials comprising transition metals are patterned with feature size resolution nearing 1 μm. We demonstrate fabrication of reduced metallic nickel in one step and examine electrical properties and air stability through direct-write integration onto a device platform. This strategy expands the chemistries and materials that can be used in combination with laser direct writing.

Using laser-induced thermal voxels to pattern diverse materials at the solid–liquid interface

DOE PAGES

Zarzar, Lauren D.; Swartzentruber, B. S.; Donovan, Brian F.; ...

2016-08-05

We describe a high-resolution patterning approach that combines the spatial control inherent to laser direct writing with the versatility of benchtop chemical synthesis. By taking advantage of the steep thermal gradient that occurs while laser heating a metal edge in contact with solution, diverse materials comprising transition metals are patterned with feature size resolution nearing 1 μm. We demonstrate fabrication of reduced metallic nickel in one step and examine electrical properties and air stability through direct-write integration onto a device platform. In conclusion, this strategy expands the chemistries and materials that can be used in combination with laser direct writing.

Quantum Plasmonics: Quantum Information at the Nanoscale

DTIC Science & Technology

2016-11-06

journal. In total this project has thus far resulted in six journal articles. We are currently writing up an additional work, on direct quantum tomography...resulted in six journal articles. We are currently writing up an additional work, on direct quantum tomography on state entanglement in quantum

Direct-write assembly of microperiodic planar and spanning ITO microelectrodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ahn, Bok Y; Lorang, David J; Duoss, Eric B.

2010-01-01

Printed Sn-doped In{sub 2}O{sub 3} (ITO) microelectrodes are fabricated by direct-write assembly of sol–gel inks with varying concentration. This maskless, non-lithographic approach provides a facile route to patterning transparent conductive features in planar arrays and spanning architectures.

48 CFR 1852.242-70 - Technical direction.

Code of Federal Regulations, 2010 CFR

2010-10-01

... Direction (SEP 1993) (a) Performance of the work under this contract is subject to the written technical... the Contracting Officer in writing in accordance with NASA FAR Supplement 1842.270. “Technical... in writing by the COTR. (d) The Contractor shall proceed promptly with the performance of technical...

Investigation of the Influence of a Writing-to-Learn Assignment on Student Understanding of Polymer Properties

ERIC Educational Resources Information Center

Finkenstaedt-Quinn, Solaire A.; Halim, Audrey S.; Chambers, Timothy G.; Moon, Alena; Goldman, R. S.; Gere, Anne Ruggles; Shultz, Ginger V.

2017-01-01

We conducted a study to examine how a writing-to-learn assignment influenced student learning of polymer behavior. In particular, we examined the role of specific content and a rhetorical framework as well as a structured writing process including peer review and revision. The student-generated writing was analyzed via a content-directed rubric.…

Should We Outgrow Personal Writing? Polanyi and Perry on Reality, Truth, and Intellectual Development.

ERIC Educational Resources Information Center

Inkster, Robert P.

The notion of "Personal Writing" has come under sustained attack from several different directions and for a variety of reasons, yet it is a concept that still retains usefulness for writing instructors. One problem with personal writing is that frequently students do not like it or feel it invades their privacy, despite the traditional…

The Word Writing CAFE: Assessing Student Writing for Complexity, Accuracy, and Fluency

ERIC Educational Resources Information Center

Leal, Dorothy J.

2005-01-01

The Word Writing CAFE is a new assessment tool designed for teachers to evaluate objectively students' word-writing ability for fluency, accuracy, and complexity. It is designed to be given to the whole class at one time. This article describes the development of the CAFE and provides directions for administering and scoring it. The author also…

High resolution imaging and lithography with hard x rays using parabolic compound refractive lenses

NASA Astrophysics Data System (ADS)

Schroer, C. G.; Benner, B.; Günzler, T. F.; Kuhlmann, M.; Zimprich, C.; Lengeler, B.; Rau, C.; Weitkamp, T.; Snigirev, A.; Snigireva, I.; Appenzeller, J.

2002-03-01

Parabolic compound refractive lenses are high quality optical components for hard x rays. They are particularly suited for full field imaging, with applications in microscopy and x-ray lithography. Taking advantage of the large penetration depth of hard x rays, the interior of opaque samples can be imaged with submicrometer resolution. To obtain the three-dimensional structure of a sample, microscopy is combined with tomographic techniques. In a first hard x-ray lithography experiment, parabolic compound refractive lenses have been used to project the reduced image of a lithography mask onto a resist. Future developments are discussed.

Nanoparticle photoresist studies for EUV lithography

NASA Astrophysics Data System (ADS)

Kasahara, Kazuki; Xu, Hong; Kosma, Vasiliki; Odent, Jeremy; Giannelis, Emmanuel P.; Ober, Christopher K.

2017-03-01

EUV (extreme ultraviolet) lithography is one of the most promising candidates for next generation lithography. The main challenge for EUV resists is to simultaneously satisfy resolution, LWR (line-width roughness) and sensitivity requirements according to the ITRS roadmap. Though polymer type CAR (chemically amplified resist) is the currently standard photoresist, entirely new resist platforms are required due to the performance targets of smaller process nodes. In this paper, recent progress in nanoparticle photoresists which Cornell University has intensely studied is discussed. Lithography performance, especially scum elimination, improvement studies with the dissolution rate acceleration concept and new metal core applications are described.

Direct Writing of Three-Dimensional Macroporous Photonic Crystals on Pressure-Responsive Shape Memory Polymers.

PubMed

Fang, Yin; Ni, Yongliang; Leo, Sin-Yen; Wang, Bingchen; Basile, Vito; Taylor, Curtis; Jiang, Peng

2015-10-28

Here we report a single-step direct writing technology for making three-dimensional (3D) macroporous photonic crystal patterns on a new type of pressure-responsive shape memory polymer (SMP). This approach integrates two disparate fields that do not typically intersect: the well-established templating nanofabrication and shape memory materials. Periodic arrays of polymer macropores templated from self-assembled colloidal crystals are squeezed into disordered arrays in an unusual shape memory "cold" programming process. The recovery of the original macroporous photonic crystal lattices can be triggered by direct writing at ambient conditions using both macroscopic and nanoscopic tools, like a pencil or a nanoindenter. Interestingly, this shape memory disorder-order transition is reversible and the photonic crystal patterns can be erased and regenerated hundreds of times, promising the making of reconfigurable/rewritable nanooptical devices. Quantitative insights into the shape memory recovery of collapsed macropores induced by the lateral shear stresses in direct writing are gained through fundamental investigations on important process parameters, including the tip material, the critical pressure and writing speed for triggering the recovery of the deformed macropores, and the minimal feature size that can be directly written on the SMP membranes. Besides straightforward applications in photonic crystal devices, these smart mechanochromic SMPs that are sensitive to various mechanical stresses could render important technological applications ranging from chromogenic stress and impact sensors to rewritable high-density optical data storage media.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aoki, Kenji

A read/write head for a magnetic tape includes an elongated chip assembly and a tape running surface formed in the longitudinal direction of the chip assembly. A pair of substantially spaced parallel read/write gap lines for supporting read/write elements extend longitudinally along the tape running surface of the chip assembly. Also, at least one groove is formed on the tape running surface on both sides of each of the read/write gap lines and extends substantially parallel to the read/write gap lines.

Pervasive liquid metal based direct writing electronics with roller-ball pen

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zheng, Yi; Zhang, Qin; Liu, Jing, E-mail: jliu@mail.ipc.ac.cn

A roller-ball pen enabled direct writing electronics via room temperature liquid metal ink was proposed. With the rolling to print mechanism, the metallic inks were smoothly written on flexible polymer substrate to form conductive tracks and electronic devices. The contact angle analyzer and scanning electron microscope were implemented to disclose several unique inner properties of the obtained electronics. An ever high writing resolution with line width and thickness as 200 μm and 80 μm, respectively was realized. Further, with the administration of external writing pressure, GaIn{sub 24.5} droplets embody increasing wettability on polymer which demonstrates the pervasive adaptability of themore » roller-ball pen electronics.« less

Microsystems Research in Japan

DTIC Science & Technology

2003-09-01

microsystems applications, like microfluidic systems, will require more than planar lithography -based fabrication processes. The committee was impressed by the...United States focused on exploiting silicon planar lithography as the core technology for microstructure fabrication, whereas Japan explored a wide...including LIGA and its extensions, micro-stereolithography, and e-beam lithography . The range of materials seen in Japan was broader than in the

Microscale architecture in biomaterial scaffolds for spatial control of neural cell behavior

NASA Astrophysics Data System (ADS)

Meco, Edi; Lampe, Kyle J.

2018-02-01

Biomaterial scaffolds mimic aspects of the native central nervous system (CNS) extracellular matrix (ECM) and have been extensively utilized to influence neural cell (NC) behavior in in vitro and in vivo settings. These biomimetic scaffolds support NC cultures, can direct the differentiation of NCs, and have recapitulated some native NC behavior in an in vitro setting. However, NC transplant therapies and treatments used in animal models of CNS disease and injury have not fully restored functionality. The observed lack of functional recovery occurs despite improvements in transplanted NC viability when incorporating biomaterial scaffolds and the potential of NC to replace damaged native cells. The behavior of NCs within biomaterial scaffolds must be directed in order to improve the efficacy of transplant therapies and treatments. Biomaterial scaffold topography and imbedded bioactive cues, designed at the microscale level, can alter NC phenotype, direct migration, and differentiation. Microscale patterning in biomaterial scaffolds for spatial control of NC behavior has enhanced the capabilities of in vitro models to capture properties of the native CNS tissue ECM. Patterning techniques such as lithography, electrospinning and 3D bioprinting can be employed to design the microscale architecture of biomaterial scaffolds. Here, the progress and challenges of the prevalent biomaterial patterning techniques of lithography, electrospinning, and 3D bioprinting are reported. This review analyzes NC behavioral response to specific microscale topographical patterns and spatially organized bioactive cues.

Promoting Self-Directed Revision in EFL Writing Classes

ERIC Educational Resources Information Center

Coomber, Matthew

2016-01-01

Second language writers need to develop the ability to revise their writing independently of third party advice; thus, it is important that teachers devise methods by which to promote habits of self-directed revision. This quasi-experimental study investigates three classroom activities designed to encourage students to independently revise essays…

Final Report for Grant "Direct Writing via Novel Aromatic Ladder Polymer Precursors"

DOE Office of Scientific and Technical Information (OSTI.GOV)

C. B. Gorman

2010-10-29

This report describes activities and findings under the above entitled grant. These pertain to the development of new synthetic routes to novel precursor polymers and oligomers that are applicable for conversion from electrical insulators to electrical conductors under the application of light (e.g. direct photolithographic writing)

48 CFR 1052.201-70 - Contracting Officer's Technical Representative (COTR) Designation and Authority.

Code of Federal Regulations, 2010 CFR

2010-10-01

... in writing. The term “technical direction” includes, without limitation, direction to the contractor... the actions of the contractor's employees. (d) Technical direction may be oral or in writing. The COTR... Technical Representative (COTR) Designation and Authority. 1052.201-70 Section 1052.201-70 Federal...

Hybrid soft-lithography/laser machined microchips for the parallel generation of droplets†

PubMed Central

Muluneh, M.

2015-01-01

Microfluidic chips have been developed to generate droplets and microparticles with control over size, shape, and composition not possible using conventional methods. However, it has remained a challenge to scale-up production for practical applications due to the inherently limited throughput of micro-scale devices. To address this problem, we have developed a self-contained microchip that integrates many (N = 512) micro-scale droplet makers. This 3 × 3 cm2 PDMS microchip consists of a two-dimensional array of 32 × 16 flow-focusing droplet makers, a network of flow channels that connect them, and only two inputs and one output. The key innovation of this technology is the hybrid use of both soft-lithography and direct laser-micromachining. The microscale resolution of soft lithography is used to fabricate flow-focusing droplet makers that can produce small and precisely defined droplets. Deeply engraved (h ≈ 500 μm) laser-machined channels are utilized to supply each of the droplet makers with its oil phase, aqueous phase, and access to an output channel. The engraved channels' low hydrodynamic resistance ensures that each droplet maker is driven with the same flow rates for highly uniform droplet formation.To demonstrate the utility of this approach, water droplets (d ≈ 80 μm) were generated in hexadecane on both 8 × 1 and 32 × 16 geometries. PMID:24166156

Mirror writing: a tachistoscopic study of a woman suffering from migraine when writing with the right hand.

PubMed

Nakano, Mitsuko; Tanaka, Shigeki; Izuno, Kenji; Ichihara, Shigeru

2012-01-01

An experimental study was conducted with a young woman who had suddenly developed mirror writing in the right hand, which she used for writing. She was not cured for eight years. The patient was ambidextrous and had no medical complaints except for migraine with perceptual and sensory abnormalities, and an enlarged cavity of the septum pellucidum. A previous study using functional magnetic resonance imaging (fMRI), conducted when she imagined letters and wrote letters in the air with either hand, indicated that both her cerebral hemispheres were active. In the present study three experiments were conducted using a tachistoscope to explore the stage in the cognitive process when directional errors emerged. In the experiments, after independently being presented with Attneave's meaningless figures or letters to each hemisphere, participants were requested to do the following: (a) verbally respond whether the orientation of two consecutively shown figures were the same or different and the letters were standard or reversed; (b) distinguish the orientations with right and left hand movements other than by writing (by pushing a button); and (c) reproduce the stimuli (drawing) immediately after the presentation. Results showed a higher rate of incorrect directions only when drawings were reproduced by the right hand. Results also indicated that the woman's inaccurate judgment in direction emerged only when in writing and not at the perceptual level, or when responding with hand movements other than writing. Her migraine was cured after five years following the experiment. The mirror writing was cured 2-3 months later.

What is technical writing? Prolegomenon to a contextual definition

NASA Technical Reports Server (NTRS)

Barton, B. F.; Barton, M. S.

1981-01-01

The question, "What is Technical Writing?", is addressed. Interest about the stance a teacher assumes in a classroom, the orientation of textbooks, and the shape of curricula are considered. Technical writing is considered of age, definitions abound and the time is ripe for a metaperspective on the question. This analyzes pitfalls in representative definitions of technical writing suggest a direction for future inquiry.

The Computer-Based Writing Program: A Clinical Teaching Experience for Education Interns to Develop Professional Knowledge and Skills in Effective Instructional Writing Practices

ERIC Educational Resources Information Center

Painter, Diane D.

2016-01-01

The four-week university-sponsored summer Computer-based Writing (CBW) Program directed by the head of a special education initial teacher licensure program gave teaching interns opportunities to work with young struggling writers in a supervised clinical setting to address keyboarding skills, writing conventions and knowledge and application of…

How To Improve Students' Writing Styles.

ERIC Educational Resources Information Center

Griffin, Beverly Norris

Instructors often criticize student writing styles in abstract, nebulous terms which further serve to alienate student writers from the concept of style. College instructors should direct students to such concise, recognized discourses on improving writing style as Strunk and White's "The Elements of Style." In these manuals, specific, effective…

Design of near-field irregular diffractive optical elements by use of a multiresolution direct binary search method.

PubMed

Li, Jia-Han; Webb, Kevin J; Burke, Gerald J; White, Daniel A; Thompson, Charles A

2006-05-01

A multiresolution direct binary search iterative procedure is used to design small dielectric irregular diffractive optical elements that have subwavelength features and achieve near-field focusing below the diffraction limit. Designs with a single focus or with two foci, depending on wavelength or polarization, illustrate the possible functionalities available from the large number of degrees of freedom. These examples suggest that the concept of such elements may find applications in near-field lithography, wavelength-division multiplexing, spectral analysis, and polarization beam splitters.

A general design strategy for block copolymer directed self-assembly patterning of integrated circuits contact holes using an alphabet approach.

PubMed

Yi, He; Bao, Xin-Yu; Tiberio, Richard; Wong, H-S Philip

2015-02-11

Directed self-assembly (DSA) is a promising lithography candidate for technology nodes beyond 14 nm. Researchers have shown contact hole patterning for random logic circuits using DSA with small physical templates. This paper introduces an alphabet approach that uses a minimal set of small physical templates to pattern all contacts configurations on integrated circuits. We illustrate, through experiments, a general and scalable template design strategy that links the DSA material properties to the technology node requirements.

Simulation of the effect of incline incident angle in DMD Maskless Lithography

NASA Astrophysics Data System (ADS)

Liang, L. W.; Zhou, J. Y.; Xiang, L. L.; Wang, B.; Wen, K. H.; Lei, L.

2017-06-01

The aim of this study is to provide a simulation method for investigation of the intensity fluctuation caused by the inclined incident angle in DMD (digital micromirror device) maskless lithography. The simulation consists of eight main processes involving the simplification of the DMD aperture function and light propagation utilizing the non-parallel angular spectrum method. These processes provide a possibility of co-simulation in the spatial frequency domain, which combines the microlens array and DMD in the maskless lithography system. The simulation provided the spot shape and illumination distribution. These two parameters are crucial in determining the exposure dose in the existing maskless lithography system.

Range pattern matching with layer operations and continuous refinements

NASA Astrophysics Data System (ADS)

Tseng, I.-Lun; Lee, Zhao Chuan; Li, Yongfu; Perez, Valerio; Tripathi, Vikas; Ong, Jonathan Yoong Seang

2018-03-01

At advanced and mainstream process nodes (e.g., 7nm, 14nm, 22nm, and 55nm process nodes), lithography hotspots can exist in layouts of integrated circuits even if the layouts pass design rule checking (DRC). Existence of lithography hotspots in a layout can cause manufacturability issues, which can result in yield losses of manufactured integrated circuits. In order to detect lithography hotspots existing in physical layouts, pattern matching (PM) algorithms and commercial PM tools have been developed. However, there are still needs to use DRC tools to perform PM operations. In this paper, we propose a PM synthesis methodology, which uses a continuous refinement technique, for the automatic synthesis of a given lithography hotspot pattern into a DRC deck, which consists of layer operation commands, so that an equivalent PM operation can be performed by executing the synthesized deck with the use of a DRC tool. Note that the proposed methodology can deal with not only exact patterns, but also range patterns. Also, lithography hotspot patterns containing multiple layers can be processed. Experimental results show that the proposed methodology can accurately and efficiently detect lithography hotspots in physical layouts.

Intelligent control system based on ARM for lithography tool

NASA Astrophysics Data System (ADS)

Chen, Changlong; Tang, Xiaoping; Hu, Song; Wang, Nan

2014-08-01

The control system of traditional lithography tool is based on PC and MCU. The PC handles the complex algorithm, human-computer interaction, and communicates with MCU via serial port; The MCU controls motors and electromagnetic valves, etc. This mode has shortcomings like big volume, high power consumption, and wasting of PC resource. In this paper, an embedded intelligent control system of lithography tool, based on ARM, is provided. The control system used S5PV210 as processor, completing the functions of PC in traditional lithography tool, and provided a good human-computer interaction by using LCD and capacitive touch screen. Using Android4.0.3 as operating system, the equipment provided a cool and easy UI which made the control more user-friendly, and implemented remote control and debug, pushing video information of product by network programming. As a result, it's convenient for equipment vendor to provide technical support for users. Finally, compared with traditional lithography tool, this design reduced the PC part, making the hardware resources efficiently used and reducing the cost and volume. Introducing embedded OS and the concepts in "The Internet of things" into the design of lithography tool can be a development trend.

Vectorial mask optimization methods for robust optical lithography

NASA Astrophysics Data System (ADS)

Ma, Xu; Li, Yanqiu; Guo, Xuejia; Dong, Lisong; Arce, Gonzalo R.

2012-10-01

Continuous shrinkage of critical dimension in an integrated circuit impels the development of resolution enhancement techniques for low k1 lithography. Recently, several pixelated optical proximity correction (OPC) and phase-shifting mask (PSM) approaches were developed under scalar imaging models to account for the process variations. However, the lithography systems with larger-NA (NA>0.6) are predominant for current technology nodes, rendering the scalar models inadequate to describe the vector nature of the electromagnetic field that propagates through the optical lithography system. In addition, OPC and PSM algorithms based on scalar models can compensate for wavefront aberrations, but are incapable of mitigating polarization aberrations in practical lithography systems, which can only be dealt with under the vector model. To this end, we focus on developing robust pixelated gradient-based OPC and PSM optimization algorithms aimed at canceling defocus, dose variation, wavefront and polarization aberrations under a vector model. First, an integrative and analytic vector imaging model is applied to formulate the optimization problem, where the effects of process variations are explicitly incorporated in the optimization framework. A steepest descent algorithm is then used to iteratively optimize the mask patterns. Simulations show that the proposed algorithms can effectively improve the process windows of the optical lithography systems.

Holographic lithography for biomedical applications

NASA Astrophysics Data System (ADS)

Stankevicius, E.; Balciunas, E.; Malinauskas, M.; Raciukaitis, G.; Baltriukiene, D.; Bukelskiene, V.

2012-06-01

Fabrication of scaffolds for cell growth with appropriate mechanical characteristics is top-most important for successful creation of tissue. Due to ability of fast fabrication of periodic structures with a different period, the holographic lithography technique is a suitable tool for scaffolds fabrication. The scaffolds fabricated by holographic lithography can be used in various biomedical investigations such as the cellular adhesion, proliferation and viability. These investigations allow selection of the suitable material and geometry of scaffolds which can be used in creation of tissue. Scaffolds fabricated from di-acrylated poly(ethylene glycol) (PEG-DA-258) over a large area by holographic lithography technique are presented in this paper. The PEG-DA scaffolds fabricated by holographic lithography showed good cytocompatibility for rabbit myogenic stem cells. It was observed that adult rabbit muscle-derived myogenic stem cells grew onto PEG-DA scaffolds. They were attached to the pillars and formed cell-cell interactions. It demonstrates that the fabricated structures have potential to be an interconnection channel network for cell-to-cell interactions, flow transport of nutrients and metabolic waste as well as vascular capillary ingrowth. These results are encouraging for further development of holographic lithography by improving its efficiency for microstructuring three-dimensional scaffolds out of biodegradable hydrogels

Anticipating and controlling mask costs within EDA physical design

NASA Astrophysics Data System (ADS)

Rieger, Michael L.; Mayhew, Jeffrey P.; Melvin, Lawrence S.; Lugg, Robert M.; Beale, Daniel F.

2003-08-01

For low k1 lithography, more aggressive OPC is being applied to critical layers, and the number of mask layers with OPC treatments is growing rapidly. The 130 nm, process node required, on average, 8 layers containing rules- or model-based OPC. The 90 nm node will have 16 OPC layers, of which 14 layers contain aggressive model-based OPC. This escalation of mask pattern complexity, coupled with the predominant use of vector-scan e-beam (VSB) mask writers contributes to the rising costs of advanced mask sets. Writing times for OPC layouts are several times longer than for traditional layouts, making mask exposure the single largest cost component for OPC masks. Lower mask yields, another key factor in higher mask costs, is also aggravated by OPC. Historical mask set costs are plotted below. The initial cost of a 90 nm-node mask set will exceed one million dollars. The relative impact of mask cost on chip depends on how many total wafers are printed with each mask set. For many foundry chips, where unit production is often well below 1000 wafers, mask costs are larger than wafer processing costs. Further increases in NRE may begin to discourage these suppliers' adoption to 90 nm and smaller nodes. In this paper we will outline several alternatives for reducing mask costs by strategically leveraging dimensional margins. Dimensional specifications for a particular masking layer usually are applied uniformly to all features on that layer. As a practical matter, accuracy requirements on different features in the design may vary widely. Take a polysilicon layer, for example: global tolerance specifications for that layer are driven by the transistor-gate requirements; but these parameters over-specify interconnect feature requirements. By identifying features where dimensional accuracy requirements can be reduced, additional margin can be leveraged to reduce OPC complexity. Mask writing time on VSB tools will drop in nearly direct proportion to reduce shot count. By inspecting masks with reference to feature-dependent margins, instead of uniform specifications, mask yield can be effectively increased further reducing delivered mask expense.

Writing Like a Scientist: Exploring Elementary Teachers' Understandings and Practices of Writing in Science

NASA Astrophysics Data System (ADS)

Glen, Nicole J.; Dotger, Sharon

2013-10-01

This qualitative study examined the connections between elementary teachers’ conceptions of how scientists use writing and how the teachers used writing during science lessons. Data collected included lesson observations, interviews, handouts to students, and curriculum resources. The findings revealed that teachers in this study thought scientists write for several purposes: the presentation of data, observations, experiences, procedures, and facts. The teachers used writing tasks that mirrored this with their students. The teachers also had a limited definition of creativity in writing, and when they had students write creatively in science it was to add in fictional elements. Implications of this study include providing teachers with better models for how and why scientists write, including these models in more inquiry-based science lessons, and directly relating concepts of nature of science to elementary science writing.

Projection lithography with distortion compensation using reticle chuck contouring

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tichenor, Daniel A.

2001-01-01

A chuck for holding a reflective reticle where the chuck has an insulator block with a non-planer surface contoured to cause distortion correction of EUV radiation is provided. Upon being placed on the chuck, a thin, pliable reflective reticle will conform to the contour of the chuck's non-planer surface. When employed in a scanning photolithography system, distortion in the scanned direction is corrected.

Persistent Left Unilateral Mirror Writing: A Neuropsychological Case Study

ERIC Educational Resources Information Center

Angelillo, Valentina G.; De Lucia, Natascia; Trojano, Luigi; Grossi, Dario

2010-01-01

Mirror writing (MW) is a rare disorder in which a script runs in direction opposite to normal and individual letters are reversed. The disorder generally occurs after left-hemisphere lesions, is transient and is observed on the left hand, whereas usually motor impairments prevent assessment of direction of right handwriting. We describe a…

Responding Electronically to Student Drafts on Campus: Dis/Encouraging Dialogue?

ERIC Educational Resources Information Center

Harran, M.; Knott, A.; Weir, C.

2011-01-01

This article reports on an investigation into whether writing centre (WC) respondents at an institution of Higher Education (HE) encourage or discourage draft dialogue (a conversation in writing) with students submitting drafts electronically to the WC for feedback. The writing respondents insert local feedback responses or comments directly onto…

Bloomington Writing Assessment 1977; Student Exercise, Teacher Directions, Scoring.

ERIC Educational Resources Information Center

Bloomington Public Schools, MN.

This booklet contains the 14 exercises that are used in the Bloomington, Minnesota, school system's writing assessment program. Depending on their applicability, the exercises may be used to assess the writing performance of fourth-, eighth-, or eleventh-grade students. Thirteen of the exercises are from the National Assessment of Educational…

Motivation and Creativity: Effects of Motivational Orientation on Creative Writers.

ERIC Educational Resources Information Center

Amabile, Teresa M.

This study directly tested the hypothesis that intrinsic motivation is conducive to creativity and extrinsic motivation is detrimental. Chosen because they identified themselves as actively involved in creative writing, 72 young adults participated in individual laboratory sessions where they were asked to write two brief poems. Before writing the…

The Function of Text in a Dialogic Writing Course.

ERIC Educational Resources Information Center

Comprone, Joseph J.

Focusing on recent composition theory, this paper offers suggestions for writing teachers in applying concepts of dialogic discourse directly to the pedagogy of the college writing course. The first section of the paper addresses the influence of the social constructionist work on interpretation theory by Richard Rorty, Clifford Geertz, and…

Writing for Manufacturing Personnel.

ERIC Educational Resources Information Center

Mercer County Community Coll., Trenton, NJ.

This document, developed by Mercer County Community College (New Jersey) and its partners, offers lists of topics covered in each day of a 24-day course designed to teach General Motors employees the following skills: document information; write clear directions and instructions; outline and organize thoughts and ideas; write memos and business…

Necessity, Invention, and Other Mothers--Going Interdepartmental.

ERIC Educational Resources Information Center

Collins, Terence

One direction in which English departments must turn in the search for effective methods of writing instruction is toward definition of responsibility for writing skills as an institution-wide concern. Any number of studies--a selection of which is included in an appended annotated bibliography--substantiate the premise that writing instruction…

Three-dimensional integration of microoptical components buried inside photosensitive glass by femtosecond laser direct writing

NASA Astrophysics Data System (ADS)

Wang, Zhongke; Sugioka, Koji; Midorikawa, Katsumi

2007-12-01

We report the three-dimensional (3D) integration of microoptical components such as microlenses, micromirrors and optical waveguides in a single glass chip by femtosecond (fs) laser direct writing. First, two types of microoptical lenses were fabricated inside photosensitive Foturan glass by forming hollow microstructures using fs laser direct writing followed by thermal treatment, successive wet etching and additional annealing. One type of lens is the cylindrical microlens with a curvature radius R of 1.0 mm, and the other is the plano-convex microlens with radius R of 0.75 mm. Subsequently, by the continuous procedure of hollow microstructure fabrication, a micromirror was integrated with the plano-convex microlens in the single glass chip. Further integration of waveguides was performed by internal refractive index modification using fs laser direct writing after the hollow structure fabrication of the microlens and the micromirror. A demonstration of the laser beam transmission in the integrated optical microdevice shows that the 3D integration of waveguides with a micromirror and a microoptical lens in a single glass chip is highly effective for light beam guiding and focusing.

Metamaterial-based half Maxwell fish-eye lens for broadband directive emissions

NASA Astrophysics Data System (ADS)

Dhouibi, Abdallah; Nawaz Burokur, Shah; de Lustrac, André; Priou, Alain

2013-01-01

The broadband directive emission from a metamaterial surface is numerically and experimentally reported. The metasurface, composed of non-resonant complementary closed ring structures, is designed to obey the refractive index of a half Maxwell fish-eye lens. A planar microstrip Vivaldi antenna is used as transverse magnetic polarized wave launcher for the lens. A prototype of the lens associated with its feed structure has been fabricated using standard lithography techniques. To experimentally demonstrate the broadband focusing properties and directive emissions, both the far-field radiation patterns and the near-field distributions have been measured. Measurements agree quantitatively and qualitatively with theoretical simulations.

Focused ion beam direct micromachining of DOEs

NASA Astrophysics Data System (ADS)

Khan Malek, Chantal; Hartley, Frank T.; Neogi, Jayant

2000-09-01

We discuss here the capability of direct manufacture of various high- resolution diffractive optics, in particular regarding micromachining of DOEs in 3D. Preliminary demonstrations were made in 2-D using an automated FIB system operated at 30 KeV with a Gallium liquid metal ion source and equipped with a gas injection system (GIS). Gratings with a 20 nm line width and zone plates with 32 nm outer ring were milled in a reactive atmosphere (iodine) directly through 3.5 (mu) m and 800 nm of gold respectively. Plans for combining FIB and X-ray lithography to make diffractive optical elements (DOEs) for JPL are also mentioned.

Terahertz electrical writing speed in an antiferromagnetic memory

PubMed Central

Kašpar, Zdeněk; Campion, Richard P.; Baumgartner, Manuel; Sinova, Jairo; Kužel, Petr; Müller, Melanie; Kampfrath, Tobias

2018-01-01

The speed of writing of state-of-the-art ferromagnetic memories is physically limited by an intrinsic gigahertz threshold. Recently, realization of memory devices based on antiferromagnets, in which spin directions periodically alternate from one atomic lattice site to the next has moved research in an alternative direction. We experimentally demonstrate at room temperature that the speed of reversible electrical writing in a memory device can be scaled up to terahertz using an antiferromagnet. A current-induced spin-torque mechanism is responsible for the switching in our memory devices throughout the 12-order-of-magnitude range of writing speeds from hertz to terahertz. Our work opens the path toward the development of memory-logic technology reaching the elusive terahertz band. PMID:29740601

Laser direct writing of carbon/Au composite electrodes for high-performance micro-supercapacitors

NASA Astrophysics Data System (ADS)

Cai, Jinguang; Watanabe, Akira; Lv, Chao

2017-02-01

Micro-supercapacitors with small size, light weight, flexibility while maintaining high energy and power output are required for portable miniaturized electronics. The fabrication methods and materials should be cost-effective, scalable, and easily integrated to current electronic industry. Carbon materials have required properties for high-performance flexible supercapacitors, including high specific surface areas, electrochemical stability, and high electrical conductivity, as well as the high mechanical tolerance. Laser direct writing method is a non-contact, efficient, single-step fabrication technique without requirements of masks, post-processing, and complex clean room, which is a useful patterning technique, and can be easily integrated with current electronic product lines for commercial use. Previously we have reported micro-supercapacitors fabricated by laser direct writing on polyimide films in air or Ar, which showed highcapacitive performance. However, the conductivity of the carbon materials is still low for fast charge-discharge use. Here, we demonstrated the fabrication of flexible carbon/Au composite high-performance MSCs by first laser direct writing on commercial polyimide films followed by spin-coating Au nanoparticles ink and second in-situ laser direct writing using the low-cost semiconductor laser. As-prepared micro-supercapacitors show an improved conductivity and capacitance of 1.17 mF/cm2 at a high scanning rate of 10,000 mV/s, which is comparable to the reported capacitance of carbon-based micro-supercapacitors. In addition, the micro-supercapacitors have high bend tolerance and long-cycle stability.

Persistent left unilateral mirror writing: A neuropsychological case study.

PubMed

Angelillo, Valentina G; De Lucia, Natascia; Trojano, Luigi; Grossi, Dario

2010-09-01

Mirror writing (MW) is a rare disorder in which a script runs in direction opposite to normal and individual letters are reversed. The disorder generally occurs after left-hemisphere lesions, is transient and is observed on the left hand, whereas usually motor impairments prevent assessment of direction of right handwriting. We describe a left-handed patient with complete left hand mirror writing, still evident 2 years after a hemorrhagic stroke in left nucleo-capsular region. Since the patient could write with his right hand he underwent several writing tasks with either hand, and a thorough assessment to clarify the nature of MW. MW was evident in writing to dictation with left hand only, both in right and left hemispace, but the patient could modify his behavior when a verbal instruction was provided. No mirror errors were found in reading words, in copying geometric figures and in spatial orientation tasks. MW in our patient could be accounted for by a failure in automatic transformation of grapho-motor programs to write with the left hand. A lack of concern (a sort of anosodiaphoria) and a poor cognitive flexibility could contribute to long-term persistence of MW. 2010 Elsevier Inc. All rights reserved.

Substrate thermal conductivity controls the ability to manufacture microstructures via laser-induced direct write

NASA Astrophysics Data System (ADS)

Tomko, John A.; Olson, David H.; Braun, Jeffrey L.; Kelliher, Andrew P.; Kaehr, Bryan; Hopkins, Patrick E.

2018-01-01

In controlling the thermal properties of the surrounding environment, we provide insight into the underlying mechanisms driving the widely used laser direct write method for additive manufacturing. We find that the onset of silver nitrate reduction for the formation of direct write structures directly corresponds to the calculated steady-state temperature rises associated with both continuous wave and high-repetition rate, ultrafast pulsed laser systems. Furthermore, varying the geometry of the heat affected zone, which is controllable based on in-plane thermal diffusion in the substrate, and laser power, allows for control of the written geometries without any prior substrate preparation. These findings allow for the advance of rapid manufacturing of micro- and nanoscale structures with minimal material constraints through consideration of the laser-controllable thermal transport in ionic liquid/substrate media.

Construction of meaning in the authentic science writing of deaf students.

PubMed

Lang, H G; Albertini, J A

2001-01-01

This study examines how students construct meaning through writing during authentic science activities. To determine how well students understood science concepts, we analyzed 228 writing samples from deaf students in grades 6 through 11 as well as the explanatory and reflective comments of their teachers. The analyses indicate that certain process writing strategies were differentially useful in helping deaf students to construct meaning and in allowing teachers to evaluate the constructed meaning. Three instructional conditions and two teacher variables were found to play roles in determining the accuracy and adequacy of the writing: (1) the writing prompts the teachers used, (2) the focus for the writing, (3) follow-up to the initial writing activity, (4) the teacher's content knowledge, and (5) the teacher's ability to interpret student writing. The authors recommend future applications of writing-to-learn strategies and suggest directions for further research and changes in teacher education.

Kindergarten Predictors of Third Grade Writing

PubMed Central

Kim, Young-Suk; Al Otaiba, Stephanie; Wanzek, Jeanne

2015-01-01

The primary goal of the present study was to examine the relations of kindergarten transcription, oral language, word reading, and attention skills to writing skills in third grade. Children (N = 157) were assessed on their letter writing automaticity, spelling, oral language, word reading, and attention in kindergarten. Then, they were assessed on writing in third grade using three writing tasks – one narrative and two expository prompts. Children’s written compositions were evaluated in terms of writing quality (the extent to which ideas were developed and presented in an organized manner). Structural equation modeling showed that kindergarten oral language and lexical literacy skills (i.e., word reading and spelling) were independently predicted third grade narrative writing quality, and kindergarten literacy skill uniquely predicted third grade expository writing quality. In contrast, attention and letter writing automaticity were not directly related to writing quality in either narrative or expository genre. These results are discussed in light of theoretical and practical implications. PMID:25642118

Recent developments of x-ray lithography in Canada

NASA Astrophysics Data System (ADS)

Chaker, Mohamed; Boily, Stephane; Ginovker, A.; Jean, Alain; Kieffer, Jean-Claude; Mercier, P. P.; Pepin, Henri; Leung, Pak; Currie, John F.; Lafontaine, Hugues

1991-08-01

An overview of current activities in Canada is reported, including x-ray lithography studies based on laser plasma sources and x-ray mask development. In particular, the application of laser plasma sources for x-ray lithography is discussed, taking into account the industrial requirement and the present state of laser technology. The authors describe the development of silicon carbide membranes for x-ray lithography application. SiC films were prepared using either a 100 kHz plasma-enhanced chemical vapor deposition (PECVD) system or a laser ablation technique. These membranes have a relatively large diameter (> 1 in.) and a high optical transparency (> 50%). Experimental studies on stresses in tungsten films deposited with triode sputtering are reported.

Merging Bottom-Up with Top-Down: Continuous Lamellar Networks and Block Copolymer Lithography

NASA Astrophysics Data System (ADS)

Campbell, Ian Patrick

Block copolymer lithography is an emerging nanopatterning technology with capabilities that may complement and eventually replace those provided by existing optical lithography techniques. This bottom-up process relies on the parallel self-assembly of macromolecules composed of covalently linked, chemically distinct blocks to generate periodic nanostructures. Among the myriad potential morphologies, lamellar structures formed by diblock copolymers with symmetric volume fractions have attracted the most interest as a patterning tool. When confined to thin films and directed to assemble with interfaces perpendicular to the substrate, two-dimensional domains are formed between the free surface and the substrate, and selective removal of a single block creates a nanostructured polymeric template. The substrate exposed between the polymeric features can subsequently be modified through standard top-down microfabrication processes to generate novel nanostructured materials. Despite tremendous progress in our understanding of block copolymer self-assembly, continuous two-dimensional materials have not yet been fabricated via this robust technique, which may enable nanostructured material combinations that cannot be fabricated through bottom-up methods. This thesis aims to study the effects of block copolymer composition and processing on the lamellar network morphology of polystyrene-block-poly(methyl methacrylate) (PS-b-PMMA) and utilize this knowledge to fabricate continuous two-dimensional materials through top-down methods. First, block copolymer composition was varied through homopolymer blending to explore the physical phenomena surrounding lamellar network continuity. After establishing a framework for tuning the continuity, the effects of various processing parameters were explored to engineer the network connectivity via defect annihilation processes. Precisely controlling the connectivity and continuity of lamellar networks through defect engineering and optimizing the block copolymer lithography process thus enabled the top-down fabrication of continuous two-dimensional gold networks with nanoscale properties. The lamellar structure of these networks was found to confer unique mechanical properties on the nanowire networks and suggests that materials templated via this method may be excellent candidates for integration into stretchable and flexible devices.

Study on photochemical analysis system (VLES) for EUV lithography

NASA Astrophysics Data System (ADS)

Sekiguchi, A.; Kono, Y.; Kadoi, M.; Minami, Y.; Kozawa, T.; Tagawa, S.; Gustafson, D.; Blackborow, P.

2007-03-01

A system for photo-chemical analysis of EUV lithography processes has been developed. This system has consists of 3 units: (1) an exposure that uses the Z-Pinch (Energetiq Tech.) EUV Light source (DPP) to carry out a flood exposure, (2) a measurement system RDA (Litho Tech Japan) for the development rate of photo-resists, and (3) a simulation unit that utilizes PROLITH (KLA-Tencor) to calculate the resist profiles and process latitude using the measured development rate data. With this system, preliminary evaluation of the performance of EUV lithography can be performed without any lithography tool (Stepper and Scanner system) that is capable of imaging and alignment. Profiles for 32 nm line and space pattern are simulated for the EUV resist (Posi-2 resist by TOK) by using VLES that hat has sensitivity at the 13.5nm wavelength. The simulation successfully predicts the resist behavior. Thus it is confirmed that the system enables efficient evaluation of the performance of EUV lithography processes.

Modeling of projection electron lithography

NASA Astrophysics Data System (ADS)

Mack, Chris A.

2000-07-01

Projection Electron Lithography (PEL) has recently become a leading candidate for the next generation of lithography systems after the successful demonstration of SCAPEL by Lucent Technologies and PREVAIL by IBM. These systems use a scattering membrane mask followed by a lens with limited angular acceptance range to form an image of the mask when illuminated by high energy electrons. This paper presents an initial modeling system for such types of projection electron lithography systems. Monte Carlo modeling of electron scattering within the mask structure creates an effective mask 'diffraction' pattern, to borrow the standard optical terminology. A cutoff of this scattered pattern by the imaging 'lens' provides an electron energy distribution striking the wafer. This distribution is then convolved with a 'point spread function,' the results of a Monte Carlo scattering calculation of a point beam of electrons striking the resist coated substrate and including the effects of beam blur. Resist exposure and development models from standard electron beam lithography simulation are used to simulate the final three-dimensional resist profile.

EB and EUV lithography using inedible cellulose-based biomass resist material

NASA Astrophysics Data System (ADS)

Takei, Satoshi; Hanabata, Makoto; Oshima, Akihiro; Kashiwakura, Miki; Kozawa, Takahiro; Tagawa, Seiichi

2016-03-01

The validity of our approach of inedible cellulose-based resist material derived from woody biomass has been confirmed experimentally for the use of pure water in organic solvent-free water spin-coating and tetramethylammonium hydroxide(TMAH)-free water-developable techniques of eco-conscious electron beam (EB) and extreme-ultraviolet (EUV) lithography. The water developable, non-chemically amplified, high sensitive, and negative tone resist material in EB and EUV lithography was developed for environmental affair, safety, easiness of handling, and health of the working people. The inedible cellulose-based biomass resist material was developed by replacing the hydroxyl groups in the beta-linked disaccharides with EB and EUV sensitive groups. The 50-100 nm line and space width, and little footing profiles of cellulose-based biomass resist material on hardmask and layer were resolved at the doses of 10-30 μC/cm2. The eco-conscious lithography techniques was referred to as green EB and EUV lithography using inedible cellulose-based biomass resist material.

Combination photo and electron beam lithography with polymethyl methacrylate (PMMA) resist.

PubMed

Carbaugh, Daniel J; Pandya, Sneha G; Wright, Jason T; Kaya, Savas; Rahman, Faiz

2017-11-10

We describe techniques for performing photolithography and electron beam lithography in succession on the same resist-covered substrate. Larger openings are defined in the resist film through photolithography whereas smaller openings are defined through conventional electron beam lithography. The two processes are carried out one after the other and without an intermediate wet development step. At the conclusion of the two exposures, the resist film is developed once to reveal both large and small openings. Interestingly, these techniques are applicable to both positive and negative tone lithographies with both optical and electron beam exposure. Polymethyl methacrylate, by itself or mixed with a photocatalytic cross-linking agent, is used for this purpose. We demonstrate that such resists are sensitive to both ultraviolet and electron beam irradiation. All four possible combinations, consisting of optical and electron beam lithographies, carried out in positive and negative tone modes have been described. Demonstration grating structures have been shown and process conditions have been described for all four cases.

Controlling bridging and pinching with pixel-based mask for inverse lithography

NASA Astrophysics Data System (ADS)

Kobelkov, Sergey; Tritchkov, Alexander; Han, JiWan

2016-03-01

Inverse Lithography Technology (ILT) has become a viable computational lithography candidate in recent years as it can produce mask output that results in process latitude and CD control in the fab that is hard to match with conventional OPC/SRAF insertion approaches. An approach to solving the inverse lithography problem as a nonlinear, constrained minimization problem over a domain mask pixels was suggested in the paper by Y. Granik "Fast pixel-based mask optimization for inverse lithography" in 2006. The present paper extends this method to satisfy bridging and pinching constraints imposed on print contours. Namely, there are suggested objective functions expressing penalty for constraints violations, and their minimization with gradient descent methods is considered. This approach has been tested with an ILT-based Local Printability Enhancement (LPTM) tool in an automated flow to eliminate hotspots that can be present on the full chip after conventional SRAF placement/OPC and has been applied in 14nm, 10nm node production, single and multiple-patterning flows.

The Tablet Inscribed: Inclusive Writing Instruction with the iPad

ERIC Educational Resources Information Center

Sullivan, Rebecca M.

2013-01-01

Despite the author's initial skepticism, a classroom set of iPads has reinforced a student-directed approach to writing instruction, while also supporting an inclusive classroom. Using the iPads, students guide their writing process with access to the learning management system, electronic information resources, and an online text editor. Students…

Balancing Self-Directed Learning with Expert Mentoring: The Science Writing Heuristic Approach

ERIC Educational Resources Information Center

Shelley, Mack; Fostvedt, Luke; Gonwa-Reeves, Christopher; Baenziger, Joan; McGill, Michael; Seefeld, Ashley; Hand, Brian; Therrien, William; Taylor, Jonte; Villanueva, Mary Grace

2012-01-01

This study focuses on the implementation of the Science Writing Heuristic (SWH) curriculum (Hand, 2007), which combines current understandings of learning as a cognitive and negotiated process with the techniques of argument-based inquiry, critical thinking skills, and writing to strengthen student outcomes. Success of SWH is dependent on the…

The Effects of Teacher Directed Writing Instruction Combined with SOLO Literacy Suite

ERIC Educational Resources Information Center

Park, Y.; Ambrose, G.; Coleman, M. B.; Moore, T. C.

2017-01-01

The purpose of this study was to examine the effectiveness of an intervention in which teacher-led instruction was combined with computerized writing software to improve paragraph writing for three middle school students with intellectual disability. A multiple probe across participants design was used to evaluate the effectiveness of the…

Technical Writing 1987: Galloping Off in at Least Two Directions.

ERIC Educational Resources Information Center

Stohrer, Freda F.

Technical writing instructors generally agree about the absolute need for communication skills throughout the technological work place, but a survey of technical writing journal articles shows a lack of focus on ways to address business's needs for on-the-job literacy. One major advance within the profession in recent years has been the…

"Make It New": Introducing Poetry Through Writing Poetry.

ERIC Educational Resources Information Center

Lim, Shirley

One approach to introducing students to poetry is to have them write and analyze their own poems. Although this approach has some disadvantages, it does serve to tap students' experiences and expressive potential with creative projects and to give them an immediate and direct relationship with the traditional published works. By writing poems…

Mentor Texts and the Coding of Academic Writing Structures: A Functional Approach

ERIC Educational Resources Information Center

Escobar Alméciga, Wilder Yesid; Evans, Reid

2014-01-01

The purpose of the present pedagogical experience was to address the English language writing needs of university-level students pursuing a degree in bilingual education with an emphasis in the teaching of English. Using mentor texts and coding academic writing structures, an instructional design was developed to directly address the shortcomings…

Student Writing Standards: A Descending Spiral or a Bold New Direction?

ERIC Educational Resources Information Center

McKinney, Margaret; Comadina Granson, Ruben

2013-01-01

Many academics speak of a "literacy crisis" when referring to student writing standards, often pointing the finger of blame at an overall increase in social networking. The resulting tendency has been for language teachers in higher education to take a corrective, or even remedial, approach to writing fluency. This paper examines…

Writing Conferences and Some Applications for the EFL Classroom.

ERIC Educational Resources Information Center

Renner, Christopher

1990-01-01

A teacher of English as a Foreign Language (EFL) to adults in a non-English-speaking country describes use of classroom writing conferences to improve student language use and introduce writing into the communicative syllabus. The approach is based on a conference format and focuses on self-directed inquiry. Students are provided with monolingual…

Direct ink write fabrication of transparent ceramic gain media

NASA Astrophysics Data System (ADS)

Jones, Ivy Krystal; Seeley, Zachary M.; Cherepy, Nerine J.; Duoss, Eric B.; Payne, Stephen A.

2018-01-01

Solid-state laser gain media based on the garnet structure with two spatially distinct but optically contiguous regions have been fabricated. Transparent gain media comprised of a central core of Y2.97Nd0.03Al5.00O12.00 (Nd:YAG) and an undoped cladding region of Y3Al5O12 (YAG) were fabricated by direct ink write and transparent ceramic processing. Direct ink write (DIW) was employed to form the green body, offering a general route to preparing functionally structured solid-state laser gain media. Fully-dense transparent optical ceramics in a "top hat" geometry with YAG/Nd:YAG have been fabricated by DIW methods with optical scatter at 1064 nm of <3%/cm.

Flexible metal patterning in glass microfluidic structures using femtosecond laser direct-write ablation followed by electroless plating

NASA Astrophysics Data System (ADS)

Xu, Jian; Midorikawa, Katsumi; Sugioka, Koji

2014-03-01

A simple and flexible technique for integrating metal micropatterns into glass microfluidic structures based on threedimensional femtosecond laser microfabrication is presented. Femtosecond laser direct writing followed by thermal treatment and successive chemical etching allows us to fabricate three-dimensional microfluidic structures such as microchannels and microreservoirs inside photosensitive glass. Then, the femtosecond laser direct-write ablation followed by electroless metal plating enables space-selective deposition of patterned metal films on desired locations of internal walls of the fabricated microfluidic structures. The developed technique is applied to integrate a metal microheater into a glass microchannel to control the temperature of liquid samples in the channel, which can be used as a microreactor for enhancement of chemical reactions.

Fabrication of Three-Dimensional Imprint Lithography Templates by Colloidal Dispersions

DTIC Science & Technology

2011-03-06

Dispersions A. Marcia Almanza-Workman, Taussig P. Carl, Albert H. Jeans, Robert L. Cobene HP Laboratories HPL-2011-32 Flexible displays, Self aligned...imprint lithography, stamps, fluorothermoplastics, latex Self -aligned imprint lithography (SAIL) enables patterning and alignment of submicron-sized...features on flexible substrates in the roll-to roll (R2R) environment. Soft molds made of elastomers have been used as stamps to pattern three

Implementing a writing course in an online RN-BSN program.

PubMed

Stevens, Carol J; D'Angelo, Barbara; Rennell, Nathalie; Muzyka, Diann; Pannabecker, Virginia; Maid, Barry

2014-01-01

Scholarly writing is an essential skill for nurses to communicate new research and evidence. Written communication directly relates to patient safety and quality of care. However, few online RN-BSN programs integrate writing instruction into their curricula. Nurses traditionally learn how to write from instructor feedback and often not until midway into their baccalaureate education. Innovative strategies are needed to help nurses apply critical thinking skills to writing. The authors discuss a collaborative project between nursing faculty and technical communication faculty to develop and implement a writing course that is 1 of the 1st courses the students take in the online RN-BSN program.

The writing process: A powerful approach for the language-disabled student.

PubMed

Moulton, J R; Bader, M S

1985-01-01

Our understanding of the writing process can be a powerful tool for teaching language-disabled students the "how" of writing. Direct, explicit instruction in writing process helps these students learn to explore their ideas and to manage the multiple demands of writing. A case study of one student, Jeff, demonstrates how we structure the stages of writing: prewriting, planning, drafting, revising, and proofreading. When these stages are clearly defined and involve specific skills, language-disabled students can reach beyond their limitations and strengthen their expression. The case study of Jeff reveals the development of his sense of control and his regard for himself as a writer.

Rigorous ILT optimization for advanced patterning and design-process co-optimization

NASA Astrophysics Data System (ADS)

Selinidis, Kosta; Kuechler, Bernd; Cai, Howard; Braam, Kyle; Hoppe, Wolfgang; Domnenko, Vitaly; Poonawala, Amyn; Xiao, Guangming

2018-03-01

Despite the large difficulties involved in extending 193i multiple patterning and the slow ramp of EUV lithography to full manufacturing readiness, the pace of development for new technology node variations has been accelerating. Multiple new variations of new and existing technology nodes have been introduced for a range of device applications; each variation with at least a few new process integration methods, layout constructs and/or design rules. This had led to a strong increase in the demand for predictive technology tools which can be used to quickly guide important patterning and design co-optimization decisions. In this paper, we introduce a novel hybrid predictive patterning method combining two patterning technologies which have each individually been widely used for process tuning, mask correction and process-design cooptimization. These technologies are rigorous lithography simulation and inverse lithography technology (ILT). Rigorous lithography simulation has been extensively used for process development/tuning, lithography tool user setup, photoresist hot-spot detection, photoresist-etch interaction analysis, lithography-TCAD interactions/sensitivities, source optimization and basic lithography design rule exploration. ILT has been extensively used in a range of lithographic areas including logic hot-spot fixing, memory layout correction, dense memory cell optimization, assist feature (AF) optimization, source optimization, complex patterning design rules and design-technology co-optimization (DTCO). The combined optimization capability of these two technologies will therefore have a wide range of useful applications. We investigate the benefits of the new functionality for a few of these advanced applications including correction for photoresist top loss and resist scumming hotspots.

Data sharing system for lithography APC

NASA Astrophysics Data System (ADS)

Kawamura, Eiichi; Teranishi, Yoshiharu; Shimabara, Masanori

2007-03-01

We have developed a simple and cost-effective data sharing system between fabs for lithography advanced process control (APC). Lithography APC requires process flow, inter-layer information, history information, mask information and so on. So, inter-APC data sharing system has become necessary when lots are to be processed in multiple fabs (usually two fabs). The development cost and maintenance cost also have to be taken into account. The system handles minimum information necessary to make trend prediction for the lots. Three types of data have to be shared for precise trend prediction. First one is device information of the lots, e.g., process flow of the device and inter-layer information. Second one is mask information from mask suppliers, e.g., pattern characteristics and pattern widths. Last one is history data of the lots. Device information is electronic file and easy to handle. The electronic file is common between APCs and uploaded into the database. As for mask information sharing, mask information described in common format is obtained via Wide Area Network (WAN) from mask-vender will be stored in the mask-information data server. This information is periodically transferred to one specific lithography-APC server and compiled into the database. This lithography-APC server periodically delivers the mask-information to every other lithography-APC server. Process-history data sharing system mainly consists of function of delivering process-history data. In shipping production lots to another fab, the product-related process-history data is delivered by the lithography-APC server from the shipping site. We have confirmed the function and effectiveness of data sharing systems.

Fabrications and Applications of Stimulus-Responsive Polymer Films and Patterns on Surfaces: A Review

PubMed Central

Chen, Jem-Kun; Chang, Chi-Jung

2014-01-01

In the past two decades, we have witnessed significant progress in developing high performance stimuli-responsive polymeric materials. This review focuses on recent developments in the preparation and application of patterned stimuli-responsive polymers, including thermoresponsive layers, pH/ionic-responsive hydrogels, photo-responsive film, magnetically-responsive composites, electroactive composites, and solvent-responsive composites. Many important new applications for stimuli-responsive polymers lie in the field of nano- and micro-fabrication, where stimuli-responsive polymers are being established as important manipulation tools. Some techniques have been developed to selectively position organic molecules and then to obtain well-defined patterned substrates at the micrometer or submicrometer scale. Methods for patterning of stimuli-responsive hydrogels, including photolithography, electron beam lithography, scanning probe writing, and printing techniques (microcontact printing, ink-jet printing) were surveyed. We also surveyed the applications of nanostructured stimuli-responsive hydrogels, such as biotechnology (biological interfaces and purification of biomacromoles), switchable wettability, sensors (optical sensors, biosensors, chemical sensors), and actuators. PMID:28788489

A Lithography-Free and Field-Programmable Photonic Metacanvas.

PubMed

Dong, Kaichen; Hong, Sukjoon; Deng, Yang; Ma, He; Li, Jiachen; Wang, Xi; Yeo, Junyeob; Wang, Letian; Lou, Shuai; Tom, Kyle B; Liu, Kai; You, Zheng; Wei, Yang; Grigoropoulos, Costas P; Yao, Jie; Wu, Junqiao

2018-02-01

The unique correspondence between mathematical operators and photonic elements in wave optics enables quantitative analysis of light manipulation with individual optical devices. Phase-transition materials are able to provide real-time reconfigurability of these devices, which would create new optical functionalities via (re)compilation of photonic operators, as those achieved in other fields such as field-programmable gate arrays (FPGA). Here, by exploiting the hysteretic phase transition of vanadium dioxide, an all-solid, rewritable metacanvas on which nearly arbitrary photonic devices can be rapidly and repeatedly written and erased is presented. The writing is performed with a low-power laser and the entire process stays below 90 °C. Using the metacanvas, dynamic manipulation of optical waves is demonstrated for light propagation, polarization, and reconstruction. The metacanvas supports physical (re)compilation of photonic operators akin to that of FPGA, opening up possibilities where photonic elements can be field programmed to deliver complex, system-level functionalities. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Self-organized micro-holes on titania based sol-gel films under continuous direct writing with a continuous wave ultraviolet laser

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bakhti, S.; Destouches, N.; Gamet, E.

The microstructuring of titania based sol-gel films is investigated by direct writing with a continuous wave ultraviolet laser beam emitting at 244 nm. Depending on the exposure conditions, the films exhibit a volume expansion, a volume shrinkage, a self-shaped delamination, or are damaged. This paper is mainly focused on the regime where spontaneous local delamination occurs, which corresponds to a narrow range of laser irradiances and writing speeds. In this regime, self-organized round-shape micro-holes opened on the substrate are generated.

Rapid fabrication of microneedles using magnetorheological drawing lithography.

PubMed

Chen, Zhipeng; Ren, Lei; Li, Jiyu; Yao, Lebin; Chen, Yan; Liu, Bin; Jiang, Lelun

2018-01-01

Microneedles are micron-sized needles that are widely applied in biomedical fields owing to their painless, minimally invasive, and convenient operation. However, most microneedle fabrication approaches are costly, time consuming, involve multiple steps, and require expensive equipment. In this study, we present a novel magnetorheological drawing lithography (MRDL) method to efficiently fabricate microneedle, bio-inspired microneedle, and molding-free microneedle array. With the assistance of an external magnetic field, the 3D structure of a microneedle can be directly drawn from a droplet of curable magnetorheological fluid. The formation process of a microneedle consists of two key stages, elasto-capillary self-thinning and magneto-capillary self-shrinking, which greatly affect the microneedle height and tip radius. Penetration and fracture tests demonstrated that the microneedle had sufficient strength and toughness for skin penetration. Microneedle arrays and a bio-inspired microneedle were also fabricated, which further demonstrated the versatility and flexibility of the MRDL method. Microneedles have been widely applied in biomedical fields owing to their painless, minimally invasive, and convenient operation. However, most microneedle fabrication approaches are costly, time consuming, involve multiple steps, and require expensive equipment. Furthermore, most researchers have focused on the biomedical applications of microneedles but have given little attention to the optimization of the fabrication process. This research presents a novel magnetorheological drawing lithography (MRDL) method to fabricate microneedle, bio-inspired microneedle, and molding-free microneedle array. In this proposed technique, a droplet of curable magnetorheological fluid (CMRF) is drawn directly from almost any substrate to produce a 3D microneedle under an external magnetic field. This method not only inherits the advantages of thermal drawing approach without the need for a mask and light irradiation but also eliminates the requirement for drawing temperature adjustment. The MRDL method is extremely simple and can even produce the complex and multiscale structure of bio-inspired microneedle. Copyright © 2017 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Nanoengineered Plasmonic Hybrid Systems for Bio-nanotechnology

NASA Astrophysics Data System (ADS)

Leong, Kirsty

Plasmonic hybrid systems are fabricated using a combination of lithography and layer-by-layer directed self-assembly approaches to serve as highly sensitive nanosensing devices. This layer-by-layer directed self-assembly approach is utilized as a hybrid methodology to control the organization of quantum dots (QDs), nanoparticles, and biomolecules onto inorganic nanostructures with site-specific attachment and functionality. Here, surface plasmon-enhanced nanoarrays are fabricated where the photoluminescence of quantum dots and conjugated polymer nanoarrays are studied. This study was performed by tuning the localized surface plasmon resonance and the distance between the emitter and the metal surface using genetically engineered polypeptides as binding agents and biotin-streptavidin binding as linker molecules. In addition, these nanoarrays were also chemically modified to support the immobilization and label-free detection of DNA using surface enhanced Raman scattering. The surface of the nanoarrays was chemically modified using an acridine containing molecule which can act as an intercalating agent for DNA. The self-assembled monolayer (SAM) showed the ability to immobilize and intercalate DNA onto the surface. This SAM system using surface enhanced Raman scattering (SERS) serves as a highly sensitive methodology for the immobilization and label-free detection of DNA applicable into a wide range of bio-diagnostic platforms. Other micropatterned arrays were also fabricated using a combination of soft lithography and surface engineering. Selective single cell patterning and adhesion was achieved through chemical modifications and surface engineering of poly(dimethylsiloxane) surface. The surface of each microwell was functionally engineered with a SAM which contained an aldehyde terminated fused-ring aromatic thiolated molecule. Cells were found to be attracted and adherent to the chemically modified microwells. By combining soft lithography and surface engineering, a simple methodology produced single cell arrays on biocompatible substrates. Thus the design of plasmonic devices relies heavily on the nature of the plasmonic interactions between nanoparticles in the devices which can potentially be fabricated into lab-on-a-chip devices for multiplex sensing capabilities.

Contact electrification induced interfacial reactions and direct electrochemical nanoimprint lithography in n-type gallium arsenate wafer.

PubMed

Zhang, Jie; Zhang, Lin; Wang, Wei; Han, Lianhuan; Jia, Jing-Chun; Tian, Zhao-Wu; Tian, Zhong-Qun; Zhan, Dongping

2017-03-01

Although metal assisted chemical etching (MacEtch) has emerged as a versatile micro-nanofabrication method for semiconductors, the chemical mechanism remains ambiguous in terms of both thermodynamics and kinetics. Here we demonstrate an innovative phenomenon, i.e. , the contact electrification between platinum (Pt) and an n-type gallium arsenide (100) wafer (n-GaAs) can induce interfacial redox reactions. Because of their different work functions, when the Pt electrode comes into contact with n-GaAs, electrons will move from n-GaAs to Pt and form a contact electric field at the Pt/n-GaAs junction until their electron Fermi levels ( E F ) become equal. In the presence of an electrolyte, the potential of the Pt/electrolyte interface will shift due to the contact electricity and induce the spontaneous reduction of MnO 4 - anions on the Pt surface. Because the equilibrium of contact electrification is disturbed, electrons will transfer from n-GaAs to Pt through the tunneling effect. Thus, the accumulated positive holes at the n-GaAs/electrolyte interface make n-GaAs dissolve anodically along the Pt/n-GaAs/electrolyte 3-phase interface. Based on this principle, we developed a direct electrochemical nanoimprint lithography method applicable to crystalline semiconductors.

Generation of Customizable Micro-wavy Pattern through Grayscale Direct Image Lithography

PubMed Central

He, Ran; Wang, Shunqiang; Andrews, Geoffrey; Shi, Wentao; Liu, Yaling

2016-01-01

With the increasing amount of research work in surface studies, a more effective method of producing patterned microstructures is highly desired due to the geometric limitations and complex fabricating process of current techniques. This paper presents an efficient and cost-effective method to generate customizable micro-wavy pattern using direct image lithography. This method utilizes a grayscale Gaussian distribution effect to model inaccuracies inherent in the polymerization process, which are normally regarded as trivial matters or errors. The measured surface profiles and the mathematical prediction show a good agreement, demonstrating the ability of this method to generate wavy patterns with precisely controlled features. An accurate pattern can be generated with customizable parameters (wavelength, amplitude, wave shape, pattern profile, and overall dimension). This mask-free photolithography approach provides a rapid fabrication method that is capable of generating complex and non-uniform 3D wavy patterns with the wavelength ranging from 12 μm to 2100 μm and an amplitude-to-wavelength ratio as large as 300%. Microfluidic devices with pure wavy and wavy-herringbone patterns suitable for capture of circulating tumor cells are made as a demonstrative application. A completely customized microfluidic device with wavy patterns can be created within a few hours without access to clean room or commercial photolithography equipment. PMID:26902520

Tunable Nanoantennas for Surface Enhanced Infrared Absorption Spectroscopy by Colloidal Lithography and Post-Fabrication Etching

NASA Astrophysics Data System (ADS)

Chen, Kai; Duy Dao, Thang; Nagao, Tadaaki

2017-03-01

We fabricated large-area metallic (Al and Au) nanoantenna arrays on Si substrates using cost-effective colloidal lithography with different micrometer-sized polystyrene spheres. Variation of the sphere size leads to tunable plasmon resonances in the middle infrared (MIR) range. The enhanced near-fields allow us to detect the surface phonon polaritons in the natural SiO2 thin layers. We demonstrated further tuning capability of the resonances by employing dry etching of the Si substrates with the nanoantennas acting as the etching masks. The effective refractive index of the nanoantenna surroundings is efficiently decreased giving rise to blueshifts of the resonances. In addition, partial removal of the Si substrates elevates the nanoantennas from the high-refractive-index substrates making more enhanced near-fields accessible for molecular sensing applications as demonstrated here with surface-enhanced infrared absorption (SEIRA) spectroscopy for a thin polymer film. We also directly compared the plasmonic enhancement from the Al and Au nanoantenna arrays.

Tuning and Freezing Disorder in Photonic Crystals using Percolation Lithography

PubMed Central

Burgess, Ian B.; Abedzadeh, Navid; Kay, Theresa M.; Shneidman, Anna V.; Cranshaw, Derek J.; Lončar, Marko; Aizenberg, Joanna

2016-01-01

Although common in biological systems, synthetic self-assembly routes to complex 3D photonic structures with tailored degrees of disorder remain elusive. Here we show how liquids can be used to finely control disorder in porous 3D photonic crystals, leading to complex and hierarchical geometries. In these optofluidic crystals, dynamically tunable disorder is superimposed onto the periodic optical structure through partial wetting or evaporation. In both cases, macroscopic symmetry breaking is driven by subtle sub-wavelength variations in the pore geometry. These variations direct site-selective infiltration of liquids through capillary interactions. Incorporating cross-linkable resins into our liquids, we developed methods to freeze in place the filling patterns at arbitrary degrees of partial wetting and intermediate stages of drying. These percolation lithography techniques produced permanent photonic structures with adjustable disorder. By coupling strong changes in optical properties to subtle differences in fluid behavior, optofluidic crystals may also prove useful in rapid analysis of liquids. PMID:26790372

Solvent immersion imprint lithography: A high-performance, semi-automated procedure

PubMed Central

Liyu, D. A.; Canul, A. J.; Vasdekis, A. E.

2017-01-01

We expand upon our recent, fundamental report on solvent immersion imprint lithography (SIIL) and describe a semi-automated and high-performance procedure for prototyping polymer microfluidics and optofluidics. The SIIL procedure minimizes manual intervention through a cost-effective (∼$200) and easy-to-assemble apparatus. We analyze the procedure's performance specifically for Poly (methyl methacrylate) microsystems and report repeatable polymer imprinting, bonding, and 3D functionalization in less than 5 min, down to 8 μm resolutions and 1:1 aspect ratios. In comparison to commercial approaches, the modified SIIL procedure enables substantial cost reductions, a 100-fold reduction in imprinting force requirements, as well as a more than 10-fold increase in bonding strength. We attribute these advantages to the directed polymer dissolution that strictly localizes at the polymer-solvent interface, as uniquely offered by SIIL. The described procedure opens new desktop prototyping opportunities, particularly for non-expert users performing live-cell imaging, flow-through catalysis, and on-chip gas detection. PMID:28798847

Utilizing laser interference lithography to fabricate hierarchical optical active nanostructures inspired by the blue Morpho butterfly

NASA Astrophysics Data System (ADS)

Siddique, Radwanul H.; Faisal, Abrar; Hünig, Ruben; Bartels, Carolin; Wacker, Irene; Lemmer, Uli; Hoelscher, Hendrik

2014-09-01

The famous non-iridescent blue of the Morpho butter by is caused by a `Christmas tree' like nanostructure which is a challenge for common fabrication techniques. Here, we introduce a method to fabricate this complex morphology utilizing dual beam interference lithography. We add a reflective coating below the photoresist to create a second interference pattern in vertical direction by exploiting the back reflection from the substrate. This vertical pattern exposes the lamella structure into the photosensitive polymer while the horizontal interference pattern determines the distance of the ridges. The photosensitive polymer is chosen accordingly to create the Christmas tree' like tapered shape. The resulting artificial Morpho replica shows brilliant non-iridescent blue up to an incident angle of 40. Its optical properties are close to the original Morpho structure because the refractive index of the polymer is close to chitin. Moreover, the biomimetic surface is water repellent with a contact angle of 110.

Process optimization for particle removal on blank chrome mask plates in preparation for resist application

NASA Astrophysics Data System (ADS)

Osborne, Stephen; Smith, Eryn; Woster, Eric; Pelayo, Anthony

2002-03-01

As integrated circuits require smaller lines to provide the memory and processing capability for tomorrow's marketplace, the photomask industry is adopting higher contrast resists to improve photomask lithography. Photomask yield for several high-contrast resist recipes may be improved by coating masks at the mask shop. When coating at a mask shop, an effective method is available that uses coat/bake cluster tools to ensure blanks are clean prior to coating. Many high-contrast resists are available, and some are more susceptible to time-dependent performance factors than conventional resists. One of these factors is the time between coating and writing. Although future methods may reduce the impact of this factor, one current trend is to reduce this time by coating plates at the mask shop just prior to writing. Establishing an effective process to clean blanks prior to coating is necessary for product quality control and is a new task that is critical for maskmakers who previously purchased mask plates but have decided to begin coating them within their facility. This paper provides a strategy and method to be used within coat/bake cluster tools to remove particle contamination from mask blanks. The process uses excimer-UV ionizing radiation and ozone to remove organic contaminants, and then uses a wet process combined with megasonic agitation, surfactant, and spin forces. Megasonic agitation with surfactant lifts up particles, while the convective outflow of water enhances centripetal shear without accumulating harmful charge.

EUV patterning using CAR or MOX photoresist at low dose exposure for sub 36nm pitch

NASA Astrophysics Data System (ADS)

Thibaut, Sophie; Raley, Angélique; Lazarrino, Frederic; Mao, Ming; De Simone, Danilo; Piumi, Daniele; Barla, Kathy; Ko, Akiteru; Metz, Andrew; Kumar, Kaushik; Biolsi, Peter

2018-04-01

The semiconductor industry has been pushing the limits of scalability by combining 193nm immersion lithography with multi-patterning techniques for several years. Those integrations have been declined in a wide variety of options to lower their cost but retain their inherent variability and process complexity. EUV lithography offers a much desired path that allows for direct print of line and space at 36nm pitch and below and effectively addresses issues like cycle time, intra-level overlay and mask count costs associated with multi-patterning. However it also brings its own sets of challenges. One of the major barrier to high volume manufacturing implementation has been hitting the 250W power exposure required for adequate throughput [1]. Enabling patterning using a lower dose resist could help move us closer to the HVM throughput targets assuming required performance for roughness and pattern transfer can be met. As plasma etching is known to reduce line edge roughness on 193nm lithography printed features [2], we investigate in this paper the level of roughness that can be achieved on EUV photoresist exposed at a lower dose through etch process optimization into a typical back end of line film stack. We will study 16nm lines printed at 32 and 34nm pitch. MOX and CAR photoresist performance will be compared. We will review step by step etch chemistry development to reach adequate selectivity and roughness reduction to successfully pattern the target layer.

Surface-Directed Synthesis of Erbium-Doped Yttrium Oxide Nanoparticles within Organosilane Zeptoliter Containers

PubMed Central

2015-01-01

We introduce an approach to synthesize rare earth oxide nanoparticles using high temperature without aggregation of the nanoparticles. The dispersity of the nanoparticles is controlled at the nanoscale by using small organosilane molds as reaction containers. Zeptoliter reaction vessels prepared from organosilane self-assembled monolayers (SAMs) were used for the surface-directed synthesis of rare earth oxide (REO) nanoparticles. Nanopores of octadecyltrichlorosilane were prepared on Si(111) using particle lithography with immersion steps. The nanopores were filled with a precursor solution of erbium and yttrium salts to confine the crystallization step to occur within individual zeptoliter-sized organosilane reaction vessels. Areas between the nanopores were separated by a matrix film of octadecyltrichlorosilane. With heating, the organosilane template was removed by calcination to generate a surface array of erbium-doped yttria nanoparticles. Nanoparticles synthesized by the surface-directed approach retain the periodic arrangement of the nanopores formed from mesoparticle masks. While bulk rare earth oxides can be readily prepared by solid state methods at high temperature (>900 °C), approaches for preparing REO nanoparticles are limited. Conventional wet chemistry methods are limited to low temperatures according to the boiling points of the solvents used for synthesis. To achieve crystallinity of REO nanoparticles requires steps for high-temperature processing of samples, which can cause self-aggregation and dispersity in sample diameters. The facile steps for particle lithography address the problems of aggregation and the requirement for high-temperature synthesis. PMID:25163977

Regular Nanoscale Protein Patterns via Directed Adsorption through Self-Assembled DNA Origami Masks.

PubMed

Ramakrishnan, Saminathan; Subramaniam, Sivaraman; Stewart, A Francis; Grundmeier, Guido; Keller, Adrian

2016-11-16

DNA origami has become a widely used method for synthesizing well-defined nanostructures with promising applications in various areas of nanotechnology, biophysics, and medicine. Recently, the possibility to transfer the shape of single DNA origami nanostructures into different materials via molecular lithography approaches has received growing interest due to the great structural control provided by the DNA origami technique. Here, we use ordered monolayers of DNA origami nanostructures with internal cavities on mica surfaces as molecular lithography masks for the fabrication of regular protein patterns over large surface areas. Exposure of the masked sample surface to negatively charged proteins results in the directed adsorption of the proteins onto the exposed surface areas in the holes of the mask. By controlling the buffer and adsorption conditions, the protein coverage of the exposed areas can be varied from single proteins to densely packed monolayers. To demonstrate the versatility of this approach, regular nanopatterns of four different proteins are fabricated: the single-strand annealing proteins Redβ and Sak, the iron-storage protein ferritin, and the blood protein bovine serum albumin (BSA). We furthermore demonstrate the desorption of the DNA origami mask after directed protein adsorption, which may enable the fabrication of hierarchical patterns composed of different protein species. Because selectivity in adsorption is achieved by electrostatic interactions between the proteins and the exposed surface areas, this approach may enable also the large-scale patterning of other charged molecular species or even nanoparticles.

Resolution improvement of 3D stereo-lithography through the direct laser trajectory programming: Application to microfluidic deterministic lateral displacement device.

PubMed

Juskova, Petra; Ollitrault, Alexis; Serra, Marco; Viovy, Jean-Louis; Malaquin, Laurent

2018-02-13

The vast majority of current microfluidic devices are produced using soft lithography, a technique with strong limitations regarding the fabrication of three-dimensional architectures. Additive manufacturing holds great promises to overcome these limitations, but conventional machines still lack the resolution required by most microfluidic applications. 3D printing machines based on two-photon lasers, in contrast, have the needed resolution but are too limited in speed and size of the global device. Here we demonstrate how the resolution of conventional stereolithographic machines can be improved by a direct programming of the laser path and can contribute to bridge the gap between the two above technologies, allowing the direct printing of features between 10 and 100 μm, corresponding to a large fraction of microfluidic applications. This strategy allows to achieve resolutions limited only by the physical size of the laser beam, decreasing by a factor at least 2× the size of the smallest features printable, and increasing their reproducibility by a factor 5. The approach was applied to produce an open microfluidic device with the reversible seal, integrating periodical patterns using the simple motifs, and validated by the fabrication of a deterministic lateral displacement particles sorting device. The sorting of polystyrene beads (diameter: 20 μm and 45 μm) was achieved with a specificity >95%, comparable with that achieved with arrays prepared by microlithography. Copyright © 2017 Elsevier B.V. All rights reserved.

Optofluidic encapsulation and manipulation of silicon microchips using image processing based optofluidic maskless lithography and railed microfluidics.

PubMed

Chung, Su Eun; Lee, Seung Ah; Kim, Jiyun; Kwon, Sunghoon

2009-10-07

We demonstrate optofluidic encapsulation of silicon microchips using image processing based optofluidic maskless lithography and manipulation using railed microfluidics. Optofluidic maskless lithography is a dynamic photopolymerization technique of free-floating microstructures within a fluidic channel using spatial light modulator. Using optofluidic maskless lithography via computer-vision aided image processing, polymer encapsulants are fabricated for chip protection and guiding-fins for efficient chip conveying within a fluidic channel. Encapsulated silicon chips with guiding-fins are assembled using railed microfluidics, which is an efficient guiding and heterogeneous self-assembly system of microcomponents. With our technology, externally fabricated silicon microchips are encapsulated, fluidically guided and self-assembled potentially enabling low cost fluidic manipulation and assembly of integrated circuits.

Substrate thermal conductivity controls the ability to manufacture microstructures via laser-induced direct write

DOE PAGES

Tomko, John A.; Olson, David H.; Braun, Jeffrey L.; ...

2018-01-30

In controlling the thermal properties of the surrounding environment, we provide insight into the underlying mechanisms driving the widely used laser direct write method for additive manufacturing. In this study, we find that the onset of silver nitrate reduction for the formation of direct write structures directly corresponds to the calculated steady-state temperature rises associated with both continuous wave and high-repetition rate, ultrafast pulsed laser systems. Furthermore, varying the geometry of the heat affected zone, which is controllable based on in-plane thermal diffusion in the substrate, and laser power, allows for control of the written geometries without any prior substratemore » preparation. In conclusion, these findings allow for the advance of rapid manufacturing of micro- and nanoscale structures with minimal material constraints through consideration of the laser-controllable thermal transport in ionic liquid/substrate media.« less

Substrate thermal conductivity controls the ability to manufacture microstructures via laser-induced direct write

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tomko, John A.; Olson, David H.; Braun, Jeffrey L.

In controlling the thermal properties of the surrounding environment, we provide insight into the underlying mechanisms driving the widely used laser direct write method for additive manufacturing. In this study, we find that the onset of silver nitrate reduction for the formation of direct write structures directly corresponds to the calculated steady-state temperature rises associated with both continuous wave and high-repetition rate, ultrafast pulsed laser systems. Furthermore, varying the geometry of the heat affected zone, which is controllable based on in-plane thermal diffusion in the substrate, and laser power, allows for control of the written geometries without any prior substratemore » preparation. In conclusion, these findings allow for the advance of rapid manufacturing of micro- and nanoscale structures with minimal material constraints through consideration of the laser-controllable thermal transport in ionic liquid/substrate media.« less

Laser deposition and direct-writing of thermoelectric misfit cobaltite thin films

NASA Astrophysics Data System (ADS)

Chen, Jikun; Palla-Papavlu, Alexandra; Li, Yulong; Chen, Lidong; Shi, Xun; Döbeli, Max; Stender, Dieter; Populoh, Sascha; Xie, Wenjie; Weidenkaff, Anke; Schneider, Christof W.; Wokaun, Alexander; Lippert, Thomas

2014-06-01

A two-step process combining pulsed laser deposition of calcium cobaltite thin films and a subsequent laser induced forward transfer as micro-pixel is demonstrated as a direct writing approach of micro-scale thin film structures for potential applications in thermoelectric micro-devices. To achieve the desired thermo-electric properties of the cobaltite thin film, the laser induced plasma properties have been characterized utilizing plasma mass spectrometry establishing a direct correlation to the corresponding film composition and structure. The introduction of a platinum sacrificial layer when growing the oxide thin film enables a damage-free laser transfer of calcium cobaltite thereby preserving the film composition and crystallinity as well as the shape integrity of the as-transferred pixels. The demonstrated direct writing approach simplifies the fabrication of micro-devices and provides a large degree of flexibility in designing and fabricating fully functional thermoelectric micro-devices.