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Sample records for dislocation density gan

  1. High-resistance GaN epilayers with low dislocation density via growth mode modification

    NASA Astrophysics Data System (ADS)

    Xu, Z. Y.; Xu, F. J.; Wang, J. M.; Lu, L.; Yang, Z. J.; Wang, X. Q.; Shen, B.

    2016-09-01

    High-resistance GaN with low dislocation density adopting growth mode modification has been investigated by metalorganic chemical vapor deposition. The sheet resistance of the order of 1016 Ω/sq has been achieved at room temperature by diminishing the oxygen impurity level close to the substrate with an AlN blocking layer. Attributed to this method which offers more freedom to tailor the growth mode, a three-dimensional (3D) growth process is introduced by adjusting the growth pressure and temperature at the initial stage of the GaN epitaxy to improve the crystalline quality. The large 3D GaN grains formed during this period roughen the surface, and the following coalescence of the GaN grains causes threading dislocations bending, which finally remarkably reduces the dislocation density.

  2. Numerical analysis of dislocation density and residual stress in a GaN single crystal during the cooling process

    NASA Astrophysics Data System (ADS)

    Nakano, S.; Gao, B.; Kakimoto, K.

    2017-06-01

    In this study, we investigate the influence of thermal stress on the dislocation density and residual stress in GaN single crystals by numerical analysis. The results show that the dislocation density increases, but the thermal stress does not decrease, and the residual stress increases throughout the cooling process. The reason for this phenomenon is that the dislocation density is higher at the periphery of the crystal and distribution of dislocation density in the crystal is inhomogeneous. Then, the increase of dislocation does not allow the thermal stress on the entire crystal to relax.

  3. Growth of low-threading-dislocation-density GaN on graphene by hydride vapor phase epitaxy

    NASA Astrophysics Data System (ADS)

    He, Shunyu; Xu, Yu; Qi, Lin; Li, Zongyao; Cao, Bing; Wang, Chinhua; Zhang, Jicai; Wang, Jianfeng; Xu, Ke

    2017-03-01

    Recently, gallium nitride (GaN) films grown on graphene have been widely studied. Here, we have grown low-threading-dislocation-density GaN films on graphene by hydride vapor phase epitaxy (HVPE). The full widths at half maximum (FWHMs) of X-ray rocking curves (XRCs) of the GaN films were 276 and 350 arcsec at the 0002 and 10\\bar{1}2 reflections, respectively. This shows that the threading dislocation densities are on the order of magnitude of 108 cm‑2, which is consistent with the results of cathodoluminescence (CL).

  4. Low-dislocation-density, nonplanar GaN templates for buried heterostructure lasers grown by lateral epitaxial overgrowth

    NASA Astrophysics Data System (ADS)

    Ren, Dawei; Zhou, Wei; Dapkus, P. Daniel

    2005-03-01

    We report here the formation of nonplanar GaN templates, which consist of low-dislocation-density, naturally grown GaN ridge mesas, as a mean to facilitate the fabrication of buried heterostructure lasers. Defect reduction is realized by introducing a two-step lateral epitaxial overgrowth procedure that utilizes dislocation bending in the formation of pyramidal mesas to eradicate the threading dislocations that originate from a planar buffer layer. Transmission electron microscopy and atomic force microscopy indicate a mesa top facet having low defect density (˜8×107cm-2), atomic flatness (˜0.29nm mean roughness). Our demonstration has opened the possibility of forming buried heterostructure lasers on nonplanar GaN templates.

  5. Core properties and mobility of the basal screw dislocation in wurtzite GaN: a density functional theory study

    NASA Astrophysics Data System (ADS)

    Belabbas, I.; Chen, J.; Heggie, M. I.; Latham, C. D.; Rayson, M. J.; Briddon, P. R.; Nouet, G.

    2016-10-01

    We have performed first principles simulations, based on density functional theory (DFT), to investigate the core properties of the basal a -type screw dislocation in wurtzite gallium nitride. Our calculations demonstrate that the fully coordinated shuffle core configuration is the most energetically favourable. The calculated electronic structure of the a -type screw dislocation was found to exhibit exclusively shallow gap states which are not associated with any extended metallization. This may explain why a -type screw dislocations are less detrimental to the performance of GaN based electronic devices than c -type screw dislocations.

  6. Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs

    PubMed Central

    Shih, Huan-Yu; Shiojiri, Makoto; Chen, Ching-Hsiang; Yu, Sheng-Fu; Ko, Chung-Ting; Yang, Jer-Ren; Lin, Ray-Ming; Chen, Miin-Jang

    2015-01-01

    High threading dislocation (TD) density in GaN-based devices is a long unresolved problem because of the large lattice mismatch between GaN and the substrate, which causes a major obstacle for the further improvement of next-generation high-efficiency solid-state lighting and high-power electronics. Here, we report InGaN/GaN LEDs with ultralow TD density and improved efficiency on a sapphire substrate, on which a near strain-free GaN compliant buffer layer was grown by remote plasma atomic layer deposition. This “compliant” buffer layer is capable of relaxing strain due to the absorption of misfit dislocations in a region within ~10 nm from the interface, leading to a high-quality overlying GaN epilayer with an unusual TD density as low as 2.2 × 105 cm−2. In addition, this GaN compliant buffer layer exhibits excellent uniformity up to a 6” wafer, revealing a promising means to realize large-area GaN hetero-epitaxy for efficient LEDs and high-power transistors. PMID:26329829

  7. Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs.

    PubMed

    Shih, Huan-Yu; Shiojiri, Makoto; Chen, Ching-Hsiang; Yu, Sheng-Fu; Ko, Chung-Ting; Yang, Jer-Ren; Lin, Ray-Ming; Chen, Miin-Jang

    2015-09-02

    High threading dislocation (TD) density in GaN-based devices is a long unresolved problem because of the large lattice mismatch between GaN and the substrate, which causes a major obstacle for the further improvement of next-generation high-efficiency solid-state lighting and high-power electronics. Here, we report InGaN/GaN LEDs with ultralow TD density and improved efficiency on a sapphire substrate, on which a near strain-free GaN compliant buffer layer was grown by remote plasma atomic layer deposition. This "compliant" buffer layer is capable of relaxing strain due to the absorption of misfit dislocations in a region within ~10 nm from the interface, leading to a high-quality overlying GaN epilayer with an unusual TD density as low as 2.2 × 10(5) cm(-2). In addition, this GaN compliant buffer layer exhibits excellent uniformity up to a 6" wafer, revealing a promising means to realize large-area GaN hetero-epitaxy for efficient LEDs and high-power transistors.

  8. Correlation between the residual stress and the density of threading dislocations in GaN layers grown by hydride vapor phase epitaxy

    NASA Astrophysics Data System (ADS)

    Barchuk, M.; Röder, C.; Shashev, Y.; Lukin, G.; Motylenko, M.; Kortus, J.; Pätzold, O.; Rafaja, D.

    2014-01-01

    The correlation between the residual stress and the density of threading dislocations was investigated in polar GaN layers that were grown by using hydride vapor phase epitaxy (HVPE) on three different GaN templates. The first template type was GaN grown on sapphire by metal-organic vapor phase epitaxy. The second template type was a closed GaN nucleation layer grown on sapphire by HVPE. The third template type was a non-closed GaN nucleation layer grown by HVPE, which formed isolated pyramids on the sapphire surface. The residual stress was determined using the combination of micro-Raman spectroscopy and modified sin2 ψ method. The interplanar spacings needed for the sin2 ψ method were obtained from the reciprocal space maps that were measured using high-resolution X-ray diffraction. The density of threading dislocations was concluded from the broadening of the reciprocal lattice points that was measured using high-resolution X-ray diffraction as well. The fitting of the reciprocal space maps allowed the character of the threading dislocations to be described quantitatively in terms of the fractions of edge and screw dislocations. It was found that the threading dislocation density increases with increasing compressive residual stress. Furthermore, the dislocation density and the residual stress decrease with increasing thickness of the GaN layers. The edge component of the threading dislocations was dominant in all samples. Still, some differences in the character of the dislocations were observed for different templates.

  9. Critical thickness of GaN on AlN: impact of growth temperature and dislocation density

    NASA Astrophysics Data System (ADS)

    Sohi, P.; Martin, D.; Grandjean, N.

    2017-07-01

    Critical thickness and strain relaxation of c-plane GaN layers grown by molecular beam epitaxy on AlN were studied as a function of growth temperature and threading dislocation density (TDD). For this purpose we used AlN/sapphire templates and AlN single crystals with TDDs of ˜109 cm-2 and ˜103 cm-2, respectively. Whereas at high growth temperature (900 °C) the critical thickness for plastic relaxation is only 3 monolayers (MLs) for both substrates, this value drastically increases when decreasing the growth temperature. It reaches ˜30 MLs when GaN is deposited at 750 °C on AlN single crystals. We also observed that the strain relaxation rate strongly depends on TDD. These results exemplify the lack of efficient gliding planes in III-nitrides when grown along the c-axis, which, combined with low kinetics, allows for plastic relaxation to be frozen out. Achieving pseudomorphic GaN layers on AlN is of interest for two-dimensional electron gases based on AlN/GaN/AlN heterostructures lattice-matched to AlN single crystal substrates.

  10. Dislocation filtering in GaN nanostructures.

    PubMed

    Colby, Robert; Liang, Zhiwen; Wildeson, Isaac H; Ewoldt, David A; Sands, Timothy D; García, R Edwin; Stach, Eric A

    2010-05-12

    Dislocation filtering in GaN by selective area growth through a nanoporous template is examined both by transmission electron microscopy and numerical modeling. These nanorods grow epitaxially from the (0001)-oriented GaN underlayer through the approximately 100 nm thick template and naturally terminate with hexagonal pyramid-shaped caps. It is demonstrated that for a certain window of geometric parameters a threading dislocation growing within a GaN nanorod is likely to be excluded by the strong image forces of the nearby free surfaces. Approximately 3000 nanorods were examined in cross-section, including growth through 50 and 80 nm diameter pores. The very few threading dislocations not filtered by the template turn toward a free surface within the nanorod, exiting less than 50 nm past the base of the template. The potential active region for light-emitting diode devices based on these nanorods would have been entirely free of threading dislocations for all samples examined. A greater than 2 orders of magnitude reduction in threading dislocation density can be surmised from a data set of this size. A finite element-based implementation of the eigenstrain model was employed to corroborate the experimentally observed data and examine a larger range of potential nanorod geometries, providing a simple map of the different regimes of dislocation filtering for this class of GaN nanorods. These results indicate that nanostructured semiconductor materials are effective at eliminating deleterious extended defects, as necessary to enhance the optoelectronic performance and device lifetimes compared to conventional planar heterostructures.

  11. Enhancement of lateral growth of the GaN crystal with extremely low dislocation density during the Na-flux growth on a point seed

    NASA Astrophysics Data System (ADS)

    Hayashi, Masatoshi; Imanishi, Masayuki; Yamada, Takumi; Matsuo, Daisuke; Murakami, Kosuke; Maruyama, Mihoko; Imade, Mamoru; Yoshimura, Masashi; Mori, Yusuke

    2017-06-01

    Recently, we developed a Na-flux point seed technique for fabrication of large-diameter gallium nitride (GaN) crystals with low dislocation density. It may be possible to further reduce the dislocation density of crystals fabricated by this technique by reducing the point-seed (PS) density, because one dislocation remains on the c face of each grain grown on each point seed. Therefore, in order to realize coalescence growth by using a Multi-PS-GaN substrate with a low PS density, namely a long interval between neighboring point seeds, the lateral growth of each grain grown on a point seed must be enhanced. We attempted to promote the lateral growth of GaN crystals grown on a point seed by decreasing the flux thickness. As a result, we realized a high growth rate of 80 μm/h along the a direction and a low aspect ratio by the Na-flux point seed technique. Moreover, almost no dislocations could be found in the lateral growth sector. Consequently, growth in a thin flux is applicable for the coalescence growth technique with low PS density and may be an outstanding approach for reducing the dislocation density in GaN crystals grown by the Na-flux coalescence growth technique.

  12. Low dislocation density InAlN/AlN/GaN heterostructures grown on GaN substrates and the effects on gate leakage characteristics

    NASA Astrophysics Data System (ADS)

    Kotani, Junji; Yamada, Atsushi; Ishiguro, Tetsuro; Tomabechi, Shuichi; Nakamura, Norikazu

    2016-04-01

    This paper reports on the electrical characterization of Ni/Au Schottky diodes fabricated on InAlN high-electron-mobility transistor (HEMT) structures grown on low dislocation density free-standing GaN substrates. InAlN HEMT structures were grown on sapphire and GaN substrates by metal-organic vapor phase epitaxy, and the effects of threading dislocation density on the leakage characteristics of Ni/Au Schottky diodes were investigated. Threading dislocation densities were determined to be 1.8 × 104 cm-2 and 1.2 × 109 cm-2 by the cathodoluminescence measurement for the HEMT structures grown on GaN and sapphire substrates, respectively. Leakage characteristics of Ni/Au Schottky diodes were compared between the two samples, and a reduction of the leakage current of about three to four orders of magnitude was observed in the forward bias region. For the high reverse bias region, however, no significant improvement was confirmed. We believe that the leakage current in the low bias region is governed by a dislocation-related Frenkel-Poole emission, and the leakage current in the high reverse bias region originates from field emission due to the large internal electric field in the InAlN barrier layer. Our results demonstrated that the reduction of dislocation density is effective in reducing leakage current in the low bias region. At the same time, it was also revealed that another approach will be needed, for instance, band modulation by impurity doping and insertion of insulating layers beneath the gate electrodes for a substantial reduction of the gate leakage current.

  13. Reduction of threading edge dislocation density in n-type GaN by Si delta-doping

    NASA Astrophysics Data System (ADS)

    Pan, Y. B.; Yang, Z. J.; Chen, Z. T.; Lu, Y.; Yu, T. J.; Hu, X. D.; Xu, K.; Zhang, G. Y.

    2006-01-01

    In this study, the defect structure of periodic Si delta-doping ( δ-doping) GaN films grown by low-pressure metalorganic chemical vapor deposition has been investigated by high-resolution X-ray diffraction. Rocking curves of five planes were investigated: (0 0 0 2), (1 0 1¯ 3), (1 0 1¯ 2), (1 0 1¯ 1) and (2 0 2¯ 1), respectively. Pseudo-Voigt function was used to simulate the rocking-curve of every plane. The effects of Si δ-doping on the different types of dislocations were discussed. It was demonstrated that Si δ-doping significantly reduces the threading dislocations with a pure edge character, and induces no changes in the threading dislocations with a screw component. The results are consistent with AFM results.

  14. Dislocation core structures in Si-doped GaN

    SciTech Connect

    Rhode, S. L. Fu, W. Y.; Sahonta, S.-L.; Kappers, M. J.; Humphreys, C. J.; Horton, M. K.; Pennycook, T. J.; Dusane, R. O.; Moram, M. A.

    2015-12-14

    Aberration-corrected scanning transmission electron microscopy was used to investigate the core structures of threading dislocations in plan-view geometry of GaN films with a range of Si-doping levels and dislocation densities ranging between (5 ± 1) × 10{sup 8} and (10 ± 1) × 10{sup 9} cm{sup −2}. All a-type (edge) dislocation core structures in all samples formed 5/7-atom ring core structures, whereas all (a + c)-type (mixed) dislocations formed either double 5/6-atom, dissociated 7/4/8/4/9-atom, or dissociated 7/4/8/4/8/4/9-atom core structures. This shows that Si-doping does not affect threading dislocation core structures in GaN. However, electron beam damage at 300 keV produces 4-atom ring structures for (a + c)-type cores in Si-doped GaN.

  15. X-ray diffuse scattering from threading dislocations in epitaxial GaN layers

    NASA Astrophysics Data System (ADS)

    Barchuk, M.; Holý, V.; Miljević, B.; Krause, B.; Baumbach, T.; Hertkorn, J.; Scholz, F.

    2010-08-01

    In this article, we combine diffuse x-ray scattering with a Monte Carlo simulation method for the determination of the dislocation density in thin heteroepitaxial layers. As a model, we consider GaN epitaxial layers containing threading dislocations perpendicular to the surface. The densities of particular types of threading dislocations following from the comparison of measured and simulated distributions of diffusely scattered x-ray intensity are compared with the dislocation densities determined by etching. A good agreement was found.

  16. The effects of Si doping on dislocation movement and tensile stress in GaN films

    NASA Astrophysics Data System (ADS)

    Moram, M. A.; Kappers, M. J.; Massabuau, F.; Oliver, R. A.; Humphreys, C. J.

    2011-04-01

    Dislocations in undoped GaN move in response to the in-plane tensile stress present during film growth. Dislocation movement during growth relieves tensile stress, produces arrays of a-type dislocations and reduces the overall dislocation density, with preferential reduction of (a+c)-type dislocations. However, Si-doping limits dislocation movement, limiting the relief of the tensile stress that develops during growth and limiting dislocation reduction, probably due to the formation of Si impurity atmospheres at dislocations. Consequently, Si-doped films are under relatively greater tensile stress compared to undoped GaN films grown under similar conditions. Alternative dopants could be chosen to reduce tensile stress development, such as Ge.

  17. Self-organization of dislocation-free, high-density, vertically aligned GaN nanocolumns involving InGaN quantum wells on graphene/SiO2 covered with a thin AlN buffer layer.

    PubMed

    Hayashi, Hiroaki; Konno, Yuta; Kishino, Katsumi

    2016-02-05

    We demonstrated the self-organization of high-density GaN nanocolumns on multilayer graphene (MLG)/SiO2 covered with a thin AlN buffer layer by RF-plasma-assisted molecular beam epitaxy. MLG/SiO2 substrates were prepared by the transfer of CVD graphene onto thermally oxidized SiO2/Si [100] substrates. Employing the MLG with an AlN buffer layer enabled the self-organization of high-density and vertically aligned nanocolumns. Transmission electron microscopy observation revealed that no threading dislocations, stacking faults, or twinning defects were included in the self-organized nanocolumns. The photoluminescence (PL) peak intensities of the self-organized GaN nanocolumns were 2.0-2.6 times higher than those of a GaN substrate grown by hydride vapor phase epitaxy. Moreover, no yellow luminescence or ZB-phase GaN emission was observed from the nanocolumns. An InGaN/GaN MQW and p-type GaN were integrated into GaN nanocolumns grown on MLG, displaying a single-peak PL emission at a wavelength of 533 nm. Thus, high-density nitride p-i-n nanocolumns were fabricated on SiO2/Si using the transferred MLG interlayer, indicating the possibility of developing visible nanocolumn LEDs on graphene/SiO2.

  18. Dislocation luminescence in GaN single crystals under nanoindentation

    PubMed Central

    2014-01-01

    This work presents an experimental study on the dislocation luminescence in GaN by nanoindentation, cathodoluminescence, and Raman. The dislocation luminescence peaking at 3.12 eV exhibits a series of special properties in the cathodoluminescence measurements, and it completely disappears after annealing at 500°C. Raman spectroscopy shows evidence for existence of vacancies in the indented region. A comprehensive investigation encompassing cathodoluminescence, Raman, and annealing experiments allow the assignment of dislocation luminescence to conduction-band-acceptor transition involving Ga vacancies. The nanoscale plasticity of GaN can be better understood by considering the dislocation luminescence mechanism. PMID:25593548

  19. Dislocation confinement in the growth of Na flux GaN on metalorganic chemical vapor deposition-GaN

    SciTech Connect

    Takeuchi, S. Asazu, H.; Nakamura, Y.; Sakai, A.; Imanishi, M.; Imade, M.; Mori, Y.

    2015-12-28

    We have demonstrated a GaN growth technique in the Na flux method to confine c-, (a+c)-, and a-type dislocations around the interface between a Na flux GaN crystal and a GaN layer grown by metalorganic chemical vapor deposition (MOCVD) on a (0001) sapphire substrate. Transmission electron microscopy (TEM) clearly revealed detailed interface structures and dislocation behaviors that reduced the density of vertically aligned dislocations threading to the Na flux GaN surface. Submicron-scale voids were formed at the interface above the dislocations with a c component in MOCVD-GaN, while no such voids were formed above the a-type dislocations. The penetration of the dislocations with a c component into Na flux GaN was, in most cases, effectively blocked by the presence of the voids. Although some dislocations with a c component in the MOCVD-GaN penetrated into the Na flux GaN, their propagation direction changed laterally through the voids. On the other hand, the a-type dislocations propagated laterally and collectively near the interface, when these dislocations in the MOCVD-GaN penetrated into the Na flux GaN. These results indicated that the dislocation propagation behavior was highly sensitive to the type of dislocation, but all types of dislocations were confined to within several micrometers region of the Na flux GaN from the interface. The cause of void formation, the role of voids in controlling the dislocation behavior, and the mechanism of lateral and collective dislocation propagation are discussed on the basis of TEM results.

  20. Nanostructural engineering of nitride nucleation layers for GaN substrate dislocation reduction.

    SciTech Connect

    Koleske, Daniel David; Lee, Stephen Roger; Lemp, Thomas Kerr; Coltrin, Michael Elliott; Cross, Karen Charlene; Thaler, Gerald

    2009-07-01

    With no lattice matched substrate available, sapphire continues as the substrate of choice for GaN growth, because of its reasonable cost and the extensive prior experience using it as a substrate for GaN. Surprisingly, the high dislocation density does not appear to limit UV and blue LED light intensity. However, dislocations may limit green LED light intensity and LED lifetime, especially as LEDs are pushed to higher current density for high end solid state lighting sources. To improve the performance for these higher current density LEDs, simple growth-enabled reductions in dislocation density would be highly prized. GaN nucleation layers (NLs) are not commonly thought of as an application of nano-structural engineering; yet, these layers evolve during the growth process to produce self-assembled, nanometer-scale structures. Continued growth on these nuclei ultimately leads to a fully coalesced film, and we show in this research program that their initial density is correlated to the GaN dislocation density. In this 18 month program, we developed MOCVD growth methods to reduce GaN dislocation densities on sapphire from 5 x 10{sup 8} cm{sup -2} using our standard delay recovery growth technique to 1 x 10{sup 8} cm{sup -2} using an ultra-low nucleation density technique. For this research, we firmly established a correlation between the GaN nucleation thickness, the resulting nucleation density after annealing, and dislocation density of full GaN films grown on these nucleation layers. We developed methods to reduce the nuclei density while still maintaining the ability to fully coalesce the GaN films. Ways were sought to improve the GaN nuclei orientation by improving the sapphire surface smoothness by annealing prior to the NL growth. Methods to eliminate the formation of additional nuclei once the majority of GaN nuclei were developed using a silicon nitride treatment prior to the deposition of the nucleation layer. Nucleation layer thickness was determined

  1. Radiation enhanced basal plane dislocation glide in GaN

    NASA Astrophysics Data System (ADS)

    Yakimov, Eugene B.; Vergeles, Pavel S.; Polyakov, Alexander Y.; Lee, In-Hwan; Pearton, Stephen J.

    2016-05-01

    A movement of basal plane segments of dislocations in GaN films grown by epitaxial lateral overgrowth under low energy electron beam irradiation (LEEBI) was studied by the electron beam induced current (EBIC) method. Only a small fraction of the basal plane dislocation segments were susceptible to irradiation and the movement was limited to relatively short distances. The effect is explained by the radiation enhanced dislocation glide (REDG) in the structure with strong pinning. A dislocation velocity under LEEBI with a beam current lower than 1 nA was estimated as about 10 nm/s. The results assuming the REDG for prismatic plane dislocations were presented.

  2. Structure and electronic properties of mixed (a + c) dislocation cores in GaN

    SciTech Connect

    Horton, M. K.; Rhode, S. L.; Moram, M. A.

    2014-08-14

    Classical atomistic models and atomic-resolution scanning transmission electron microscopy studies of GaN films reveal that mixed (a + c)-type dislocations have multiple different core structures, including a dissociated structure consisting of a planar fault on one of the (12{sup ¯}10) planes terminated by two different partial dislocations. Density functional theory calculations show that all cores introduce localized states into the band gap, which affects device performance.

  3. Interlayer methods for reducing the dislocation density in gallium nitride

    NASA Astrophysics Data System (ADS)

    Kappers, M. J.; Moram, M. A.; Zhang, Y.; Vickers, M. E.; Barber, Z. H.; Humphreys, C. J.

    2007-12-01

    The ability of various interlayers to lower the density of threading dislocations (TDs) has been studied for the growth of c-plane (0 0 0 1) GaN epilayers on sapphire by metalorganic vapor-phase epitaxy (MOVPE). The TD density in the films may be reduced to 9×10 7 cm -2 using in-situ SiN x interlayers formed from silane and ammonia. This TD reduction method relies on the formation of facetted islands on the SiN x-treated GaN surface and the formation of dislocation half loops between bent-over TDs during the lateral overgrowth, and not by physically blocking the TDs. Thus, the TD density was reduced at the expense of greater film thickness by increasing the SiN x coverage and delaying intentionally the coalescence of the GaN islands. Scandium nitride interlayers have also proved effective for defect reduction; dislocation densities of 3×10 7 cm -2 have been reached by depositing thin (5-15 nm) Sc metal layers on 500 nm GaN-on-sapphire seed layers, then annealing in NH 3 to form ScN, followed by overgrowth of GaN. The low dislocation densities are attributed to a dislocation-blocking effect induced by the different (but compatible) crystal structures of GaN and ScN, whereby the dislocations threading from the seed layer cannot propagate through the ScN layer. The remaining dislocations appear to form on coalescence of the dislocation-free GaN islands which nucleate on the ScN interlayer.

  4. Low dislocation GaN via defect-filtering, self-assembled SiO2-sphere layers.

    SciTech Connect

    Wang, George T.; Li, Qiming

    2009-09-01

    The III-nitride (AlGaInN) materials system forms the foundation for white solid-state lighting, the adoption of which could significantly reduce U.S. energy needs. While the growth of GaN-based devices relies on heteroepitaxy on foreign substrates, the heteroepitaxial layers possess a high density of dislocations due to poor lattice and thermal expansion match. These high dislocation densities have been correlated with reduced internal quantum efficiency and lifetimes for GaN-based LEDs. Here, we demonstrate an inexpensive method for dislocation reduction in GaN grown on sapphire and silicon substrates. This technique, which requires no lithographic patterning, GaN is selectively grown through self-assembled layers of silica microspheres which act to filter out dislocations. Using this method, the threading dislocation density for GaN on sapphire was reduced from 3.3 x 10{sup 9} cm{sup -2} to 4.0 x 10{sup 7} cm{sup -2}, and from the 10{sup 10} cm{sup -2} range to {approx}6.0 x 10{sup 7} cm{sup -2} for GaN on Si(111). This large reduction in dislocation density is attributed to a dislocation blocking and bending by the unique interface between GaN and silica microspheres.

  5. Synchrotron radiation x-ray topography and defect selective etching analysis of threading dislocations in GaN

    SciTech Connect

    Sintonen, Sakari Suihkonen, Sami; Jussila, Henri; Tuomi, Turkka O.; Lipsanen, Harri; Rudziński, Mariusz; Knetzger, Michael; Meissner, Elke; Danilewsky, Andreas

    2014-08-28

    The crystal quality of bulk GaN crystals is continuously improving due to advances in GaN growth techniques. Defect characterization of the GaN substrates by conventional methods is impeded by the very low dislocation density and a large scale defect analysis method is needed. White beam synchrotron radiation x-ray topography (SR-XRT) is a rapid and non-destructive technique for dislocation analysis on a large scale. In this study, the defect structure of an ammonothermal c-plane GaN substrate was recorded using SR-XRT and the image contrast caused by the dislocation induced microstrain was simulated. The simulations and experimental observations agree excellently and the SR-XRT image contrasts of mixed and screw dislocations were determined. Apart from a few exceptions, defect selective etching measurements were shown to correspond one to one with the SR-XRT results.

  6. Movement of basal plane dislocations in GaN during electron beam irradiation

    SciTech Connect

    Yakimov, E. B.; Vergeles, P. S.; Polyakov, A. Y.; Lee, In-Hwan; Pearton, S. J.

    2015-03-30

    The movement of basal plane segments of dislocations in low-dislocation-density GaN films grown by epitaxial lateral overgrowth as a result of irradiation with the probing beam of a scanning electron microscope was detected by means of electron beam induced current. Only a small fraction of the basal plane dislocations was susceptible to such changes and the movement was limited to relatively short distances. The effect is explained by the radiation enhanced dislocation glide for dislocations pinned by two different types of pinning sites: a low-activation-energy site and a high-activation-energy site. Only dislocation segments pinned by the former sites can be moved by irradiation and only until they meet the latter pinning sites.

  7. Design and fabrication of enhanced lateral growth for dislocation reduction in GaN using nanodashes

    NASA Astrophysics Data System (ADS)

    Le Boulbar, E. D.; Priesol, J.; Nouf-Allehiani, M.; Naresh-Kumar, G.; Fox, S.; Trager-Cowan, C.; Šatka, A.; Allsopp, D. W. E.; Shields, P. A.

    2017-05-01

    The semiconductor gallium nitride is the material at the centre of energy-efficient solid-state lighting and is becoming increasingly important in high-power and high-frequency electronics. Reducing the dislocation density of gallium nitride planar layers is important for improving the performance and reliability of devices, such as light-emitting diodes and high-electron-mobility transistors. The patterning of selective growth masks is one technique for forcing a three-dimensional growth mode in order to control the propagation of threading defects to the active device layers. The morphology of the three-dimensional growth front is determined by the relative growth rates of the different facets that are formed, and for GaN is typically limited by the slow-growing {1 -1 0 1} facets. We demonstrate how the introduction of nanodash growth windows can be oriented in an array to preserve fast-growing {1 1 -2 2} facets at the early stage of growth to accelerate coalescence of three-dimensional structures into a continuous GaN layer. Cathodoluminescence and Electron Channelling Contrast Imaging methods, both used to measure the threading dislocation density, reveal that the dislocations are organised and form a distinctive pattern according to the underlying mask. By optimising the arrangement of nanodashes and the nanodash density, the threading dislocation density of GaN on sapphire epilayers can be reduced significantly from 109 cm-2 to 3.0 × 107 cm-2. Raman spectroscopy, used to monitor the strain in the overgrown GaN epilayers, shows that the position of the GaN E2H phonon mode peak was reduced as the dash density increases for a sample grown via pendeo-epitaxy whilst no obvious change was recorded for a sample grown via more conventional epitaxial lateral overgrowth. These results show how growth mask design can be used to circumvent limitations imposed by the growth dynamics. Moreover, they have revealed a greater understanding of the influence of the growth

  8. Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges

    SciTech Connect

    Killat, N. E-mail: Martin.Kuball@bristol.ac.uk; Montes Bajo, M.; Kuball, M. E-mail: Martin.Kuball@bristol.ac.uk; Paskova, T.; Evans, K. R.; Leach, J.; Li, X.; Özgür, Ü.; Morkoç, H.; Chabak, K. D.; Crespo, A.; Gillespie, J. K.; Fitch, R.; Kossler, M.; Walker, D. E.; Trejo, M.; Via, G. D.; Blevins, J. D.

    2013-11-04

    To enable gaining insight into degradation mechanisms of AlGaN/GaN high electron mobility transistors, devices grown on a low-dislocation-density bulk-GaN substrate were studied. Gate leakage current and electroluminescence (EL) monitoring revealed a progressive appearance of EL spots during off-state stress which signify the generation of gate current leakage paths. Atomic force microscopy evidenced the formation of semiconductor surface pits at the failure location, which corresponds to the interaction region of the gate contact edge and the edges of surface steps.

  9. Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges

    NASA Astrophysics Data System (ADS)

    Killat, N.; Montes Bajo, M.; Paskova, T.; Evans, K. R.; Leach, J.; Li, X.; Özgür, Ü.; Morkoç, H.; Chabak, K. D.; Crespo, A.; Gillespie, J. K.; Fitch, R.; Kossler, M.; Walker, D. E.; Trejo, M.; Via, G. D.; Blevins, J. D.; Kuball, M.

    2013-11-01

    To enable gaining insight into degradation mechanisms of AlGaN/GaN high electron mobility transistors, devices grown on a low-dislocation-density bulk-GaN substrate were studied. Gate leakage current and electroluminescence (EL) monitoring revealed a progressive appearance of EL spots during off-state stress which signify the generation of gate current leakage paths. Atomic force microscopy evidenced the formation of semiconductor surface pits at the failure location, which corresponds to the interaction region of the gate contact edge and the edges of surface steps.

  10. Annealing effect on threading dislocations in a GaN grown on Si substrate

    NASA Astrophysics Data System (ADS)

    Iwata, H.; Kobayashi, H.; Kamiya, T.; Kamei, R.; Saka, H.; Sawaki, N.; Irie, M.; Honda, Y.; Amano, H.

    2017-06-01

    Effect of rapid thermal annealing (RTA) on crystal defects in a GaN layer grown on a (111)Si substrate was investigated by photoluminescence (PL) and transmission electron microscopy (TEM) analyses. The PL spectra suggested that the density of gallium vacancy is not changed by the heat treatment up to 700 °C. In the TEM specimen, we had dislocation half loops generated by off-axis propagation of the threading dislocation. We found that the half-loop of c-type dislocation shrinks/moves by a repetitive RTA at 600-700 °C. In contrast, we could find no remarkable changes in the a-type or a+c-type dislocations.

  11. Characterization of threading dislocations in GaN (0001) substrates by photoluminescence imaging, cathodoluminescence mapping and etch pits

    NASA Astrophysics Data System (ADS)

    Yao, Yongzhao; Ishikawa, Yukari; Sudo, Masaki; Sugawara, Yoshihiro; Yokoe, Daisaku

    2017-06-01

    Dislocations in an HVPE-grown GaN substrate have been characterized by photoluminescence (PL) imaging, cathodoluminescence (CL) mapping and etch pit method. Most of the dislocations can be revealed in all three characterizations, while some of the dislocations are invisible in CL, but visible in PL and have corresponding etch pits. The different appearance of dislocations in PL and CL are discussed in terms of the difference in imaging and mapping (scanning), and the difference in excitation power density between PL and CL. In addition, TEM observation has been performed to help understand the dislocation structure of CL-invisible dislocations. The results have shown that one of the CL-inactive dislocations (TD-A) has a Burgers vector of only a-component, and its dislocation line has an 11° tilting angle towards [-1100], and a 15° tilting angle towards [-1-120], with respect to the c-axis. In comparison, another CL-visible dislocation nearby (TD-B) also has only a-component of Burgers vector, but the line direction is different to TD-A. The results have suggested that electrical properties of dislocations in GaN are not only determined by the Burgers vectors but also strongly depend on the direction of dislocation line.

  12. Formation of helical dislocations in ammonothermal GaN substrate by heat treatment

    NASA Astrophysics Data System (ADS)

    Horibuchi, Kayo; Yamaguchi, Satoshi; Kimoto, Yasuji; Nishikawa, Koichi; Kachi, Tetsu

    2016-03-01

    GaN substrate produced by the basic ammonothermal method and an epitaxial layer on the substrate was evaluated using synchrotron radiation x-ray topography and transmission electron microscopy. We revealed that the threading dislocations present in the GaN substrate are deformed into helical dislocations and the generation of the voids by heat treatment in the substrate for the first observation in the GaN crystal. These phenomena are formed by the interactions between the dislocations and vacancies. The helical dislocation was formed in the substrate region, and not in the epitaxial layer region. Furthermore, the evaluation of the influence of the dislocations on the leakage current of Schottky barrier diodes fabricated on the epitaxial layer is discussed. The dislocations did not affect the leakage current characteristics of the epitaxial layer. Our results suggest that the deformation of dislocations in the GaN substrate does not adversely affect the epitaxial layer.

  13. Dislocation annihilation in regrown GaN on nanoporous GaN template with optimization of buffer layer growth

    NASA Astrophysics Data System (ADS)

    Soh, C. B.; Hartono, H.; Chow, S. Y.; Chua, S. J.; Fitzgerald, E. A.

    2007-01-01

    Nanoporous GaN template has been fabricated by electrochemical etching to give hexagonal pits with nanoscale pores of size 20-50nm in the underlying grains. The effect of GaN buffer layer grown at various temperatures from 650to1015°C on these as-fabricated nanopores templates is investigated by transmission electron microscopy. The buffer layer grown at the optimized temperature of 850°C partially fill up the pores and voids with annihilation of threading dislocations, serving as an excellent template for high-quality GaN growth. This phenomenon is, however, not observed for the samples grown with other temperature buffer layers. Micro-Raman measurements show significant strain relaxation and improvement in the crystal quality of the overgrown GaN layer on nanoporous GaN template as compared to overgrown on conventional GaN template.

  14. Threading dislocation reduction in transit region of GaN terahertz Gunn diodes

    NASA Astrophysics Data System (ADS)

    Li, Liang; Yang, Lin-An; Zhang, Jin-Cheng; Xue, Jun-Shuai; Xu, Sheng-Rui; Lv, Ling; Hao, Yue; Niu, Mu-Tong

    2012-02-01

    An effect of the position of notch-doping layer in 1-μm GaN Gunn diode on threading dislocations (TDs) distribution is investigated by transmission electron microscopy. Compared with the top-notching-layer (TNL) structure, the bottom-notching-layer (BNL) structure can efficiently reduce the TDs density and improve the crystal quality in the transit region of GaN Gunn diode because it exhibits twice-transition of growth mode from atomic step flow to layer-by-layer nucleation and leads to a significant annihilation of TDs before penetrating into the transit region. X-ray diffraction and Raman spectroscopy reveal that the BNL structure has less compressive stress than the TNL structure.

  15. Dislocation generation in GaN by dicing process

    NASA Astrophysics Data System (ADS)

    Taguchi, Hideyuki; Kitahara, Amane; Miyake, Syugo; Nakaue, Akimitu; Nishikawa, Atsushi; Fujiwara, Yasufumi

    2013-03-01

    In order to analyze effect of the dicing process on the GaN epitaxial layer, the GaN-wafer is cut in sizes of the 0.7 mm square and the 1.7 mm square. The crystal characteristics of the GaN-chips have been measured using X-ray measurements and Raman spectra measurements. The full-width half maximum (FWHM) values of the X-ray rocking curves of (0002), (10-13) and (10-12) of the 0.7 mm square GaN-chip become wider than that of before the dicing process. The E2 (high) peak of Raman spectra at the edge in the 0.7mm square GaN-chip is shifted to lower wave number. In consideration of crystallography, we infer from these results that both the crystal strains and the screw dislocations have been generated during the dicing process.

  16. Mass transport, faceting and behavior of dislocations in GaN

    SciTech Connect

    Nitta, S.; Kashima, T.; Kariya, M.; Yukawa, Y.; Yamaguchi, S.; Amano, H.; Akasaki, I.

    2000-07-01

    The behavior of threading dislocations during mass transport of GaN was investigated in detail by transmission electron microscopy. Mass transport occurred at the surface. Therefore, growing species are supplied from the in-plane direction. The behavior of threading dislocations was found to be strongly affected by the mass transport process as well as the high crystallographic anisotropy of the surface energy of the facets particular to GaN.

  17. Effect of screw threading dislocations and inverse domain boundaries in GaN on the shape of reciprocal-space maps1

    PubMed Central

    Motylenko, Mykhaylo; Lukin, Gleb; Pätzold, Olf

    2017-01-01

    The microstructure of polar GaN layers, grown by upgraded high-temperature vapour phase epitaxy on [001]-oriented sapphire substrates, was studied by means of high-resolution X-ray diffraction and transmission electron microscopy. Systematic differences between reciprocal-space maps measured by X-ray diffraction and those which were simulated for different densities of threading dislocations revealed that threading dislocations are not the only microstructure defect in these GaN layers. Conventional dark-field transmission electron microscopy and convergent-beam electron diffraction detected vertical inversion domains as an additional microstructure feature. On a series of polar GaN layers with different proportions of threading dislocations and inversion domain boundaries, this contribution illustrates the capability and limitations of coplanar reciprocal-space mapping by X-ray diffraction to distinguish between these microstructure features. PMID:28381980

  18. Evolution of geometrically necessary dislocation density from computational dislocation dynamics

    NASA Astrophysics Data System (ADS)

    Guruprasad, P. J.; Benzerga, A. A.

    2009-07-01

    This paper presents a method for calculating GND densities in dislocation dynamics simulations. Evolution of suitably defined averages of GND density as well as maps showing the spatial nonuniform distribution of GNDs are analyzed under uniaxial loading. Focus is laid on the resolution dependence of the very notion of GND density, its dependence upon physical dimensions of plastically deformed specimens and its sensitivity to initial conditions. Acknowledgments Support from the National Science Foundation (CMMI-0748187) is gratefully acknowledged.

  19. Dislocation contrast in cathodoluminescence and electron-beam induced current maps on GaN(0 0 0 1)

    NASA Astrophysics Data System (ADS)

    Sabelfeld, Karl K.; Kaganer, Vladimir M.; Pfüller, Carsten; Brandt, Oliver

    2017-10-01

    We theoretically analyze the contrast observed at the outcrop of a threading dislocation at the GaN(0 0 0 1) surface in cathodoluminescence and electron-beam induced current maps. We consider exciton diffusion and recombination including finite recombination velocities both at the planar surface and at the dislocation. Formulating the reciprocity theorem for this general case enables us to provide a rigorous analytical solution of this diffusion-recombination problem. The results of the calculations are applied to an experimental example to determine both the exciton diffusion length and the recombination strength of threading dislocations in a free-standing GaN layer with a dislocation density of 6×105 cm-2 .

  20. Cross Slip of Dislocation Loops in GaN Under Shear

    DTIC Science & Technology

    2014-03-01

    systems unique to hexagonal close-packed ( hcp ) and wurtzite crystals. Therefore, it is important to understand cross slip of dislo- cations in GaN to...dislocations on different planes for hcp metals [24]. Table 2 The drag coefficients as functions of slip plane for screw (Bs) and edge (Be...plane. The mobility values are qualitatively con- sistent with earlier reports of dislocation motion in hcp - based structures. Staroselsky and Anand’s

  1. Depth dependence of defect density and stress in GaN grown on SiC

    SciTech Connect

    Faleev, N.; Temkin, H.; Ahmad, I.; Holtz, M.; Melnik, Yu.

    2005-12-15

    We report high resolution x-ray diffraction studies of the relaxation of elastic strain in GaN grown on SiC(0001). The GaN layers were grown with thickness ranging from 0.29 to 30 {mu}m. High level of residual elastic strain was found in thin (0.29 to 0.73 {mu}m thick) GaN layers. This correlates with low density of threading screw dislocations of 1-2x10{sup 7} cm{sup -2}, observed in a surface layer formed over a defective nucleation layer. Stress was found to be very close to what is expected from thermal expansion mismatch between the GaN and SiC. A model based on generation and diffusion of point defects accounts for these observations.

  2. Analysis of reaction between c+a and -c+a dislocations in GaN layer grown on 4-inch Si(111) substrate with AlGaN/AlN strained layer superlattice by transmission electron microscopy

    SciTech Connect

    Sugawara, Yoshihiro; Ishikawa, Yukari; Watanabe, Arata; Miyoshi, Makoto; Egawa, Takashi

    2016-04-15

    The behavior of dislocations in a GaN layer grown on a 4-inch Si(111) substrate with an AlGaN/AlN strained layer superlattice using horizontal metal-organic chemical vapor deposition was observed by transmission electron microscopy. Cross-sectional observation indicated that a drastic decrease in the dislocation density occurred in the GaN layer. The reaction of a dislocation (b=1/3[-211-3]) and anothor dislocation (b =1/3[-2113]) to form one dislocation (b =2/3[-2110]) in the GaN layer was clarified by plan-view observation using weak-beam dark-field and large-angle convergent-beam diffraction methods.

  3. Characterization of Stress Relaxation, Dislocations and Crystallographic Tilt Via X-ray Microdiffraction in GaN (0001) Layers Grown by Maskless Pendeo-Epitaxy

    SciTech Connect

    Barabash, R.I.; Ice, G.E.; Liu, W.; Einfeldt, S.; Hommel, D.; Roskowski, A.M.; Davis, R.F.

    2010-06-25

    Intrinsic stresses due to lattice mismatch and high densities of threading dislocations and extrinsic stresses resulting from the mismatch in the coefficients of thermal expansion are present in almost all III-Nitride heterostructures. Stress relaxation in the GaN layers occurs in conventional and in pendeo-epitaxial films via the formation of additional misfit dislocations, domain boundaries, elastic strain and wing tilt. Polychromatic X-ray microdiffraction, high resolution monochromatic X-ray diffraction and finite element simulations have been used to determine the distribution of strain, dislocations, sub-boundaries and crystallographic wing tilt in uncoalesced and coalesced GaN layers grown by maskless pendeo-epitaxy. An important parameter was the width-to-height ratio of the etched columns of GaN from which the lateral growth of the wings occurred. The strain and tilt across the stripes increased with the width-to-height ratio. Tilt boundaries formed in the uncoalesced GaN layers at the column/wing interfaces for samples with a large ratio. Sharper tilt boundaries were observed at the interfaces formed by the coalescence of two laterally growing wings. The wings tilted upward during cooling to room temperature for both the uncoalesced and the coalesced GaN layers. It was determined that finite element simulations that account for extrinsic stress relaxation can explain the experimental results for uncoalesced GaN layers. Relaxation of both extrinsic and intrinsic stress components in the coalesced GaN layers contribute to the observed wing tilt and the formation of sub-boundaries.

  4. Characterization of Stress Relaxation, Dislocations and Crystallographic Tilt Via X-ray Microdiffraction in GaN (0001) Layers Grown by Maskless Pendeo-Epitaxy

    SciTech Connect

    Barabash, Rozaliya; Ice, Gene E; Liu, Wenjun; Einfeldt, S.; Hommel, D.; Roskowski, A. M.; Davis, R. F.

    2005-01-01

    Intrinsic stresses due to lattice mismatch and high densities of threading dislocations and extrinsic stresses resulting from the mismatch in the coefficients of thermal expansion are present in almost all III-Nitride heterostructures. Stress relaxation in the GaN layers occurs in conventional and in pendeo-epitaxial films via the formation of additional misfit dislocations, domain boundaries, elastic strain and wing tilt. Polychromatic X-ray microdiffraction, high resolution monochromatic X-ray diffraction and finite element simulations have been used to determine the distribution of strain, dislocations, sub-boundaries and crystallographic wing tilt in uncoalesced and coalesced GaN layers grown by maskless pendeo-epitaxy. An important parameter was the width-to-height ratio of the etched columns of GaN from which the lateral growth of the wings occurred. The strain and tilt across the stripes increased with the width-to-height ratio. Tilt boundaries formed in the uncoalesced GaN layers at the column/wing interfaces for samples with a large ratio. Sharper tilt boundaries were observed at the interfaces formed by the coalescence of two laterally growing wings. The wings tilted upward during cooling to room temperature for both the uncoalesced and the coalesced GaN layers. It was determined that finite element simulations that account for extrinsic stress relaxation can explain the experimental results for uncoalesced GaN layers. Relaxation of both extrinsic and intrinsic stress components in the coalesced GaN layers contribute to the observed wing tilt and the formation of sub-boundaries.

  5. Method of growing GaN films with a low density of structural defects using an interlayer

    DOEpatents

    Bourret-Courchesne, Edith D.

    2003-01-01

    A dramatic reduction of the dislocation density in GaN was obtained by insertion of a single thin interlayer grown at an intermediate temperature (IT-IL) after the growth of an initial grown at high temperature. A description of the growth process is presented with characterization results aimed at understanding the mechanisms of reduction in dislocation density. A large percentage of the threading dislocations present in the first GaN epilayer are found to bend near the interlayer and do not propagate into the top layer which grows at higher temperature in a lateral growth mode. TEM studies show that the mechanisms of dislocation reduction are similar to those described for the epitaxial lateral overgrowth process, however a notable difference is the absence of coalescence boundaries.

  6. Selective-area growth of GaN nanocolumns on Si(111) substrates for application to nanocolumn emitters with systematic analysis of dislocation filtering effect of nanocolumns

    NASA Astrophysics Data System (ADS)

    Kishino, Katsumi; Ishizawa, Shunsuke

    2015-06-01

    The growth of highly uniform arrays of GaN nanocolumns with diameters from 122 to 430 nm on Si (111) substrates was demonstrated. The employment of GaN film templates with flat surfaces (root mean square surface roughness of 0.84 nm), which were obtained using an AlN/GaN superlattice (SL) buffer on Si, contributed to the high-quality selective-area growth of nanocolumns using a thin Ti mask of 5 nm thickness by rf-plasma-assisted molecular beam epitaxy. Although the GaN template included a large number of dislocations (dislocation density ˜1011 cm-2), the dislocation filtering effect of nanocolumns was enhanced with decreasing nanocolumn diameters (D). Systematic transmission electron microscopy (TEM) observation enabled us to explain the dependence of the dislocation propagation behavior in nanocolumns on the nanocolumn diameter for the first time. Plan-view TEM analysis was performed for nanocolumns with D = 120-324 nm by slicing the nanocolumns horizontally at a height of ˜300 nm above their bottoms and dislocation propagation through the nanocolumns was analyzed by the cross-sectional TEM observation of nanocolumns with D ˜ 200 nm. It was clarified that dislocations were effectively filtered in the bottom 300 nm region of the nanocolumns, the dislocation density of the nanocolumns decreased with decreasing D, and for narrow nanocolumns with D < 200 nm, dislocation-free crystals were obtained in the upper part of the nanocolumns. The dramatic improvement in the emission properties of GaN nanocolumns observed with decreasing diameter is discussed in relation to the decreased dislocation density. The laser action of InGaN/GaN-based nanocolumn arrays with a nanocolumn diameter of 170 nm and a period of 200 nm on Si under optical excitation was obtained with an emission wavelength of 407 nm. We also fabricated red-emitting InGaN-based nanocolumn light-emitting diodes on Si that operated at a wavelength of 652 nm, demonstrating vertical conduction through the Al

  7. On the origin of threading dislocations in GaN films

    NASA Astrophysics Data System (ADS)

    Moram, M. A.; Ghedia, C. S.; Rao, D. V. S.; Barnard, J. S.; Zhang, Y.; Kappers, M. J.; Humphreys, C. J.

    2009-10-01

    A series of GaN films were grown by metalorganic vapor phase epitaxy on nitrided sapphire using an initial annealed low-temperature nucleation layer (LT-NL), without employing any conventional threading dislocation (TD) reduction methods. Film thicknesses ranging from the LT-NL to 500 nm were used. The island network morphology was investigated at each growth stage using atomic force microscopy. Data from cathodoluminescence studies showed initially uniform luminescence, followed by the gradual development of bright (low TD) regions which had lateral sizes different from the island sizes at all times and which continued to increase in size after coalescence. The formation of low-energy arrays of a-type TDs also continued after island coalescence. X-ray diffraction, transmission electron microscopy (TEM) and AFM data indicated that the highest (a +c)-type TD densities were found in the LT-NL, but subsequently decreased due to TD loop formation (promoted by island facets) and reaction to produce a-type TDs. a-type TD densities were also high in the LT-NL but subsequently increased slightly, due to the reaction of (a +c)-type TDs. A very sharp dynamical `correlation' peak was also observed in XRD of the LT-NL, related to TDs with an a-component. Furthermore, defect formation was observed within the LT-NL using high-resolution TEM. These data are consistent with TD formation predominantly in the LT-NL, followed by TD movement at elevated growth temperatures. Initially, coalesced films had a high TD density with a spatially random TD arrangement, but progressively altered into a lower TD density, spatially clustered arrangement during growth. This type of microstructure may mistakenly be interpreted as arising from island coalescence.

  8. Study of different type of dislocations in GaN thin films

    NASA Astrophysics Data System (ADS)

    Yu, L. P.; Shi, J. Y.; Wang, Y. Z.; Zhang, H.

    2004-08-01

    High-resolution X-ray diffraction was used to analyze the type of dislocations in GaN epitaxial thin films. Rocking curves of five planes were investigated, (0 0 0 2) , (1 0 1¯ 3) , (1 0 1¯ 2) , (1 0 1¯ 1) , and (2 0 2¯ 1) , respectively. Pseudo-Voigt function was used to simulate the rocking-curve of every plane. Every extension of the rocking-curve was regarded as the effect of the interaction of the twist and tilt fractions of the dislocations. From the result, it is found that carrier mobility is more sensitive to substrate normal tilt dislocation than to in-plane twist and the interaction of the twist and tilt fractions also affect the carrier mobility.

  9. Coincident electron channeling and cathodoluminescence studies of threading dislocations in GaN.

    PubMed

    Naresh-Kumar, Gunasekar; Bruckbauer, Jochen; Edwards, Paul R; Kraeusel, Simon; Hourahine, Ben; Martin, Robert W; Kappers, Menno J; Moram, Michelle A; Lovelock, Stephen; Oliver, Rachel A; Humphreys, Colin J; Trager-Cowan, Carol

    2014-02-01

    We combine two scanning electron microscopy techniques to investigate the influence of dislocations on the light emission from nitride semiconductors. Combining electron channeling contrast imaging and cathodoluminescence imaging enables both the structural and luminescence properties of a sample to be investigated without structural damage to the sample. The electron channeling contrast image is very sensitive to distortions of the crystal lattice, resulting in individual threading dislocations appearing as spots with black-white contrast. Dislocations giving rise to nonradiative recombination are observed as black spots in the cathodoluminescence image. Comparison of the images from exactly the same micron-scale region of a sample demonstrates a one-to-one correlation between the presence of single threading dislocations and resolved dark spots in the cathodoluminescence image. In addition, we have also obtained an atomic force microscopy image from the same region of the sample, which confirms that both pure edge dislocations and those with a screw component (i.e., screw and mixed dislocations) act as nonradiative recombination centers for the Si-doped c-plane GaN thin film investigated.

  10. High dislocation density of tin induced by electric current

    SciTech Connect

    Liao, Yi-Han; Liang, Chien-Lung; Lin, Kwang-Lung; Wu, Albert T.

    2015-12-15

    A dislocation density of as high as 10{sup 17} /m{sup 2} in a tin strip, as revealed by high resolution transmission electron microscope, was induced by current stressing at 6.5 x 10{sup 3} A/ cm{sup 2}. The dislocations exist in terms of dislocation line, dislocation loop, and dislocation aggregates. Electron Backscattered Diffraction images reflect that the high dislocation density induced the formation of low deflection angle subgrains, high deflection angle Widmanstätten grains, and recrystallization. The recrystallization gave rise to grain refining.

  11. The Use of Ultrasound to Measure Dislocation Density

    NASA Astrophysics Data System (ADS)

    Barra, Felipe; Espinoza-González, Rodrigo; Fernández, Henry; Lund, Fernando; Maurel, Agnès; Pagneux, Vincent

    2015-08-01

    Dislocations are at the heart of the plastic behavior of materials yet they are very difficult to probe experimentally. Lack of a practical nonintrusive measuring tool for, say, dislocation density, seriously hampers modeling efforts, as there is little guidance from data in the form of quantitative measurements, as opposed to visualizations. Dislocation density can be measured using transmission electron microscopy (TEM) and x-ray diffraction (XRD). TEM can directly show the strain field around dislocations, which allows for the counting of the number of dislocations in a micrograph. This procedure is very laborious and local, since samples have to be very small and thin, and is difficult to apply when dislocation densities are high. XRD relies on the broadening of diffraction peaks induced by the loss of crystalline order induced by the dislocations. This broadening can be very small, and finding the dislocation density involves unknown parameters that have to be fitted with the data. Both methods, but especially TEM, are intrusive, in the sense that samples must be especially treated, mechanically and chemically. A nonintrusive method to measure dislocation density would be desirable. This paper reviews recent developments in the theoretical treatment of the interaction of an elastic wave with dislocations that have led to formulae that relate dislocation density to quantities that can be measured with samples of cm size. Experimental results that use resonant ultrasound spectroscopy supporting this assertion are reported, and the outlook for the development of a practical, nonintrusive, method to measure dislocation density is discussed.

  12. A dislocation density based constitutive model for cyclic deformation

    SciTech Connect

    Estrin, Y.; Braasch, H.; Brechet, Y.

    1996-10-01

    A new constitutive model describing material response to cyclic loading is presented. The model includes dislocation densities as internal variables characterizing the microstructural state of the material. In the formulation of the constitutive equations, the dislocation density evolution resulting from interactions between dislocations in channel-like dislocation patterns is considered. The capabilities of the model are demonstrated for INCONEL 738 LC and Alloy 800H.

  13. Kinetic path towards the passivation of threading dislocations in GaN by oxygen impurities

    NASA Astrophysics Data System (ADS)

    Christenson, Sayre; Xie, Weiyu; Sun, Yi-Yang; Zhang, S. B.

    2017-03-01

    Defect tolerance can be critically important for optoelectronics. GaN, specifically, tolerates a relatively large concentration of threading dislocations, but the physical origin of this tolerance remains a mystery. First-principles calculations reveal the removal of deep-level states from edge dislocations by oxygen passivation. This removal is, however, not a thermodynamic ground state but kinetically driven. Oxygen incorporation during growth can be harmful; it becomes beneficial if introduced in the cooling-down phase or post-growth thermal treatment at a significantly lower temperature. Our findings extend first-principles defect study to the nonequilibrium regime where low-diffusion-barrier defects affect electronic behavior of semiconductors in unexpected fashion.

  14. Evolution of threading dislocations in GaN epitaxial laterally overgrown on GaN templates using self-organized graphene as a nano-mask

    NASA Astrophysics Data System (ADS)

    Xu, Yu; Cao, Bing; He, Shunyu; Qi, Lin; Li, Zongyao; Cai, Demin; Zhang, Yumin; Ren, Guoqiang; Wang, Jianfeng; Wang, Chinhua; Xu, Ke

    2017-09-01

    Growth of high-quality GaN within a limited thickness is still a challenge, which is important both in improving device performance and in reducing the cost. In this work, a self-organized graphene is investigated as a nano-mask for two-step GaN epitaxial lateral overgrowth (2S-ELOG) in hydride vapor phase epitaxy. Efficient improvement of crystal quality was revealed by x-ray diffraction. The microstructural properties, especially the evolution of threading dislocations (TDs), were investigated by scanning electron microscopy and transmission electron microscopy. Stacking faults blocked the propagation of TDs, and fewer new TDs were subsequently generated by the coalescence of different orientational domains and lateral-overgrown GaN. This evolution mechanism of TDs was different from that of traditional ELOG technology or one-step ELOG (1S-ELOG) technology using a two-dimensional (2D) material as a mask.

  15. CONDENSED MATTER: STRUCTURE, THERMAL AND MECHANICAL PROPERTIES: Influence of dislocations in the GaN layer on the electrical properties of an AlGaN/GaN heterostructure

    NASA Astrophysics Data System (ADS)

    Gao, Zhi-Yuan; Hao, Yue; Zhang, Jin-Cheng; Li, Pei-Xian; Gu, Wen-Ping

    2009-11-01

    This paper reports on a comparative study of the spatial distributions of the electrical, optical, and structural properties in an AlGaN/GaN heterostructure. Edge dislocation density in the GaN template layer is shown to decrease in the regions of the wafer where the heterostructure sheet resistance increases and the GaN photoluminescence band-edge energy peak shifts to a high wavelength. This phenomenon is found to be attributed to the local compressive strain surrounding edge dislocation, which will generate a local piezoelectric polarization field in the GaN layer in the opposite direction to the piezoelectric polarization field in the AlGaN layer and thus help to increase the two-dimensional electron gas concentration.

  16. Gradual tilting of crystallographic orientation and configuration of dislocations in GaN selectively grown by vapour phase epitaxy methods

    PubMed

    Kuwan; Tsukamoto; Taki; Horibuchi; Oki; Kawaguchi; Shibata; Sawaki; Hiramatsu

    2000-01-01

    Cross-sectional transmission electron microscope (TEM) observation was performed for selectively grown gallium nitride (GaN) in order to examine the dependence of GaN microstructure on the growth conditions. The GaN films were grown by hydride vapour phase epitaxy (HVPE) or metalorganic vapour phase epitaxy (MOVPE) on GaN covered with a patterned mask. Thin foil specimens for TEM observation were prepared with focused ion beam (FIB) machining apparatus. It was demonstrated that the c-axis of GaN grown over the terrace of the mask tilts towards the centre of the terrace when the GaN is grown in a carrier gas of N2. The wider terrace results in a larger tilting angle if other growth conditions are identical. The tilting is attributed to 'horizontal dislocations' (HDs) generated during the overgrowth of GaN on the mask terrace. The HDs in HVPE-GaN have a semi-loop shape and are tangled with one another, while those in MOVPE-GaN are straight and lined up to form low-angle grain boundaries.

  17. Dislocations limited electronic transport in hydride vapour phase epitaxy grown GaN templates: A word of caution for the epitaxial growers

    SciTech Connect

    Chatterjee, Abhishek Khamari, Shailesh K.; Kumar, R.; Dixit, V. K.; Oak, S. M.; Sharma, T. K.

    2015-01-12

    GaN templates grown by hydride vapour phase epitaxy (HVPE) and metal organic vapour phase epitaxy (MOVPE) techniques are compared through electronic transport measurements. Carrier concentration measured by Hall technique is about two orders larger than the values estimated by capacitance voltage method for HVPE templates. It is learnt that there exists a critical thickness of HVPE templates below which the transport properties of epitaxial layers grown on top of them are going to be severely limited by the density of charged dislocations lying at layer-substrate interface. On the contrary MOVPE grown templates are found to be free from such limitations.

  18. Recombination-related properties of a-screw dislocations in GaN: A combined CL, EBIC, TEM study

    SciTech Connect

    Medvedev, O. S. Mikhailovskii, V. Yu.; Vyvenko, O. F.; Bondarenko, A. S.; Ubyivovk, E. V.; Peretzki, P.; Seibt, M.

    2016-06-17

    Cathodoluminescence (CL), electron beam current (EBIC) and transmission electron microscopy (TEM) techniques have been applied to investigate recombination properties and structure of freshly introduced dislocations in low-ohmic GaN crystals. It was confirmed that the only a-screw dislocations exhibited an intense characteristic dislocation-related luminescence (DRL) which persisted up to room temperature and was red-shifted by about 0.3 eV with respect to the band gap energy not only in HVPE but also in MOCVD grown samples. EBIC contrast of the dislocations was found to be temperature independent indicating that the dislocation-related recombination level is situated below 200 meV with respect of conduction band minimum. With the increasing of the magnification of the dislocation TEM cross-sectional images they were found to disappear, probably, due to the recombination enhanced dislocation glide (REDG) under electron beam exposure which was immediately observed in CL investigations on a large scale. The stacking fault ribbon in the core of dissociated a-screw dislocation which form a quantum well for electrons was proposed to play an important role both in DRL spectrum formation and in REDG.

  19. Exciton dynamics at a single dislocation in GaN probed by picosecond time-resolved cathodoluminescence

    SciTech Connect

    Liu, W. E-mail: gwenole.jacopin@epfl.ch; Carlin, J.-F.; Grandjean, N.; Deveaud, B.; Jacopin, G. E-mail: gwenole.jacopin@epfl.ch

    2016-07-25

    We investigate the dynamics of donor bound excitons (D°X{sub A}) at T = 10 K around an isolated single edge dislocation in homoepitaxial GaN, using a picosecond time-resolved cathodoluminescence (TR-CL) setup with high temporal and spatial resolutions. An ∼ 1.3 meV dipole-like energy shift of D°X{sub A} is observed around the dislocation, induced by the local strain fields. By simultaneously recording the variations of both the exciton lifetime and the CL intensity across the dislocation, we directly assess the dynamics of excitons around the defect. Our observations are well reproduced by a diffusion model. It allows us to deduce an exciton diffusion length of ∼24 nm as well as an effective area of the dislocation with a radius of ∼95 nm, where the recombination can be regarded as entirely non-radiative.

  20. Observation of reaction between a-type dislocations in GaN layer grown on 4-in. Si(111) substrate with AlGaN/AlN strained layer superlattice after dislocation propagation

    NASA Astrophysics Data System (ADS)

    Sugawara, Yoshihiro; Ishikawa, Yukari; Watanabe, Arata; Miyoshi, Makoto; Egawa, Takashi

    2017-06-01

    Dislocation reaction in a GaN layer grown on 4-in. Si(111) with AlGaN/AlN strained layer superlattice was observed by transmission electron microscopy. The reaction between a dislocation (b=1/3[ 1 2 bar 10 ]) and another dislocation (b =1/3[ 11 2 bar 0 ]) to form a dislocation segment (b =1/3[ 2 1 bar 1 bar 0 ]) was demonstrated by plan-view observation using weak-beam dark-field and large-angle convergent-beam electron diffraction methods. Observed reaction occurred with dislocation motion after dislocation propagation with epitaxial growth.

  1. Method to reduce dislocation density in silicon using stress

    DOEpatents

    Buonassisi, Anthony; Bertoni, Mariana; Argon, Ali; Castellanos, Sergio; Fecych, Alexandria; Powell, Douglas; Vogl, Michelle

    2013-03-05

    A crystalline material structure with reduced dislocation density and method of producing same is provided. The crystalline material structure is annealed at temperatures above the brittle-to-ductile transition temperature of the crystalline material structure. One or more stress elements are formed on the crystalline material structure so as to annihilate dislocations or to move them into less harmful locations.

  2. Reduction of crack density in ammonothermal bulk GaN growth

    NASA Astrophysics Data System (ADS)

    Letts, Edward; Key, Daryl; Hashimoto, Tadao

    2016-12-01

    The growth of high quality GaN by the ammonothermal method is appealing due to the potential to scale and achieve very high crystal quality. Several applications could benefit from the supply of very high quality GaN such as high power light emitting diodes, laser diodes, and high power electronics. Despite steady advancement by the few groups developing ammonothermal growth technology, high quality ammonothermal GaN wafers have yet be manufactured in great quantities. This paper reviews the current progress of ammonothermal growth at SixPoint Materials. Growths were performed at T<600 °C and P<300 MPa on GaN seed crystals produced by hydride vapor phase epitaxy (HVPE). For thin boules, <1 mm growth thickness, no cracking is observed. Historically however, SixPoint Materials' ammonothermal growth on HVPE seeds eventually experiences a curvature flip giving extremely high radius of curvature at a critical thickness. As the growth continues the radius of curvature degrades and cracking is observed. Since IWBNSVIII, SixPoint Materials has improved the crack free area for 5 mm thick boules from 5 to 80 mm2 to the complete seed area. This result is repeatable in multiple reactors. Careful selection of the HVPE seeds led to the greatest reduction in cracking. Seed selection combined with an additional technique has allowed boules to be grown crack free. X-ray diffraction was carried out on an ammonothermally grown boule at 90 points along a 44 mm line providing a mean (002) and (201) full width half max (FWHM) reflection of 29 and 35″ respectively using a beam spot of 0.3 mm x 0.3 mm and an open detector. The radius of curvature is typically between 3 and 20 m across the sample. Dislocation densities are routinely low 105 cm-2 .

  3. Dislocation blocking by AlGaN hot electron injecting layer in the epitaxial growth of GaN terahertz Gunn diode

    NASA Astrophysics Data System (ADS)

    Li, Liang; Yang, Lin'an; Zhang, Jincheng; Hao, Yue

    2013-09-01

    This paper reports an efficient method to improve the crystal quality of GaN Gunn diode with AlGaN hot electron injecting layer (HEI). An evident reduction of screw dislocation and edge dislocation densities is achieved by the strain management and the enhanced lateral growth in high temperature grown AlGaN HEI layer. Compared with the top hot electron injecting layer (THEI) structure, the bottom hot electron injecting layer (BHEI) structure enhances the crystal quality of transit region due to the growth sequence modulation of HEI layer. A high Hall mobility of 2934 cm2/Vs at 77 K, a nearly flat downtrend of Hall mobility at the temperature ranging from 300 to 573 K, a low intensity of ratio of yellow luminescence band to band edge emission, a narrow band edge emission line-width, and a smooth surface morphology are observed for the BHEI structural epitaxy of Gunn diode, which indicates that AlGaN BHEI structure is a promising candidate for fabrication of GaN Gunn diodes in terahertz regime.

  4. Prediction of Dislocation Cores in Aluminum from Density Functional Theory

    NASA Astrophysics Data System (ADS)

    Woodward, C.; Trinkle, D. R.; Hector, L. G., Jr.; Olmsted, D. L.

    2008-02-01

    The strain field of isolated screw and edge dislocation cores in aluminum are calculated using density-functional theory and a flexible boundary condition method. Nye tensor density contours and differential displacement fields are used to accurately bound Shockley partial separation distances. Our results of 5 7.5 Å (screw) and 7.0 9.5 Å (edge) eliminate uncertainties resulting from the wide range of previous results based on Peierls-Nabarro and atomistic methods. Favorable agreement of the predicted cores with limited experimental measurements demonstrates the need for quantum mechanical treatment of dislocation cores.

  5. Reactivity of pyrites and dislocation density

    SciTech Connect

    Pollack, S.S.; Martello, D.V.; Diehl, J.R.; Tamilia, J.V. ); Graham, R.A. )

    1991-01-01

    Highly reactive coal pyrites and unstable museum specimens are easily distinguished from the stable pyrites by the growth of white crystals that cover samples exposed to room atmosphere for short periods of time. Continued exposure to the atmosphere will eventually cause the specimens to fall apart. The term rotten pyrite has been applied to museum specimens that fall apart in this way. SEM studies show that reactive (rotten) pyrites contain between 100 and 10,000 times more dislocations than stable pyrites. Shock-loading of a stable pyrite to 7.5 GPa and 17 GPa increased its reactivity by a factor of two, probably caused by an increase in the number of imperfections. However, shock-loading at 22 GPa decreased the reactivity of pyrite because the imperfections produced at the higher pressure were removed during annealing the sample received at the higher temperature. Although there was a factor of six difference between the most and least reactive shocked MCB (commercial pyrite) samples, shock-loading did not increase the reactivity of the MCB pyrite to that of the Queensland coal pyrite. The results in hand show that while shock-loading produces sufficient imperfections to increase the reactivity of pyrites, there is insufficient data to show that imperfections are the main reason why some coal pyrites are highly reactive. 9 refs., 1 fig., 1 tab.

  6. Single crystal plasticity by modeling dislocation density rate behavior

    SciTech Connect

    Hansen, Benjamin L; Bronkhorst, Curt; Beyerlein, Irene; Cerreta, E. K.; Dennis-Koller, Darcie

    2010-12-23

    The goal of this work is to formulate a constitutive model for the deformation of metals over a wide range of strain rates. Damage and failure of materials frequently occurs at a variety of deformation rates within the same sample. The present state of the art in single crystal constitutive models relies on thermally-activated models which are believed to become less reliable for problems exceeding strain rates of 10{sup 4} s{sup -1}. This talk presents work in which we extend the applicability of the single crystal model to the strain rate region where dislocation drag is believed to dominate. The elastic model includes effects from volumetric change and pressure sensitive moduli. The plastic model transitions from the low-rate thermally-activated regime to the high-rate drag dominated regime. The direct use of dislocation density as a state parameter gives a measurable physical mechanism to strain hardening. Dislocation densities are separated according to type and given a systematic set of interactions rates adaptable by type. The form of the constitutive model is motivated by previously published dislocation dynamics work which articulated important behaviors unique to high-rate response in fcc systems. The proposed material model incorporates thermal coupling. The hardening model tracks the varying dislocation population with respect to each slip plane and computes the slip resistance based on those values. Comparisons can be made between the responses of single crystals and polycrystals at a variety of strain rates. The material model is fit to copper.

  7. Core structures analyses of (a+c)-edge dislocations in wurtzite GaN through atomistic simulations and Peierls–Nabarro model

    SciTech Connect

    Chen, Cheng; Meng, Fanchao; Song, Jun

    2015-05-21

    The core structures and slip characteristics of (a+c)-edge dislocations on pyramidal planes in wurtzite GaN were investigated employing molecular dynamics simulations. Multiple stable core configurations are identified for dislocations along the glide and shuffle planes. The corresponding generalized-stacking-fault energy (GSFE) curves for the glide and shuffle slips are calculated. The GSFE curves, combined with the Peierls–Nabarro model, demonstrate that the shuffle slip is favored over the glide slip given the markedly lower Peierls energy and stress of the shuffle slip. Our findings also indicate that in general slip motions for (a+c)-edge dislocations are only possible at elevated temperature, and the necessity of further studies of thermally activated processes to better understand the dynamics of (a+c) dislocations in GaN.

  8. Dislocation

    MedlinePlus

    Joint dislocation ... It may be hard to tell a dislocated joint from a broken bone . Both are emergencies that ... to repair a ligament that tears when the joint is dislocated is needed. Injuries to nerves and ...

  9. Evolution of dislocation density and character in hot rolled titanium determined by X-ray diffraction

    SciTech Connect

    Dragomir, I.C. . E-mail: iuliana.cernatescu@mse.gatech.edu; Li, D.S.; Castello-Branco, G.A.; Garmestani, H.; Snyder, R.L.; Ribarik, G.; Ungar, T.

    2005-07-15

    X-ray Peak Profile Analysis was employed to determine the evolution dislocation density and dislocations type in hot rolled commercially pure titanium specimens. It was found that dislocation type is dominating the deformation mechanism at all rolling reduction levels studied here. A good agreement was found between the texture evolution and changes in dislocation slip system activity during the deformation process.

  10. Direct observation of inclined a-type threading dislocation with a-type screw dislocation in GaN

    NASA Astrophysics Data System (ADS)

    Matsubara, Tohoru; Sugimoto, Kohei; Goubara, Shin; Inomoto, Ryo; Okada, Narihito; Tadatomo, Kazuyuki

    2017-05-01

    We investigated both the atomic arrangements in the core structure of threading dislocations (TDs) and their behaviors in unintentionally doped c-plane-GaN layers grown by metalorganic vapor phase epitaxy and hydride vapor phase epitaxy using high angle annular dark-field scanning transmission electron microscopy (HAADF-STEM). The extra image contrast near the core was attributed to an extra displacement in a-type TDs in addition to the core structures revealed in previous reports; we used the notation "with displacement" to describe the new core structure. We found that TDs incline towards both the m- and a-directions from the c-direction. The transition of a-type TDs from the conventional core structure to the structure with displacement was deduced from its relationship to the TD inclination. We also found similarities between a-type screw dislocations and a-type TDs with displacement in the atomic-scale HAADF-STEM images. We concluded that a-type TDs could incline towards the a-direction via a-type screw dislocations, and that these inclined a-type TDs are observed as the core structure with displacement.

  11. Identifying dislocations and stacking faults in GaN films by scanning transmission electron microscopy

    NASA Astrophysics Data System (ADS)

    Su, X. J.; Niu, M. T.; Zeng, X. H.; Huang, J.; Zhang, J. C.; Zhang, J. P.; Wang, J. F.; Xu, K.

    2016-08-01

    The application of annular bright field (ABF) and medium-angle annular dark field (MAADF) scanning transmission electron microscopy (STEM) imaging to crystalline defect analysis has been extended to dislocations and stacking faults (SFs). Dislocations and SFs have been imaged under zone-axis and two-beam diffraction conditions. Comparing to conventional two-beam diffraction contrast images, the ABF and MAADF images of dislocations and SFs not only are complementary and symmetrical with their peaks at dislocation core and SFs plane, but also show similar extinction phenomenon. It is demonstrated that conventional TEM rules for diffraction contrast, i.e. g · b and g · R invisibility criteria remain applicable. The contrast mechanism and extinction of dislocation and SFs in ABF and MAADF STEM are illuminated by zero-order Laue zone Kikuchi diffraction.

  12. Stress-free states of continuum dislocation fields: Rotations, grain boundaries, and the Nye dislocation density tensor

    NASA Astrophysics Data System (ADS)

    Limkumnerd, Surachate; Sethna, James P.

    2007-06-01

    We derive general relations between grain boundaries, rotational deformations, and stress-free states for the mesoscale continuum Nye dislocation density tensor. Dislocations generally are associated with long-range stress fields. We provide the general form for dislocation density fields whose stress fields vanish. We explain that a grain boundary (a dislocation wall satisfying Frank’s formula) has vanishing stress in the continuum limit. We show that the general stress-free state can be written explicitly as a (perhaps continuous) superposition of flat Frank walls. We show that the stress-free states are also naturally interpreted as configurations generated by a general spatially dependent rotational deformation. Finally, we propose a least-squares definition for the spatially dependent rotation field of a general (stressful) dislocation density field.

  13. Dislocation

    MedlinePlus

    ... Dislocations can occur in contact sports, such as football and hockey, and in sports in which falls ... downhill skiing, gymnastics and volleyball. Basketball players and football players also commonly dislocate joints in their fingers ...

  14. Highly-stable and low-state-density Al2O3/GaN interfaces using epitaxial n-GaN layers grown on free-standing GaN substrates

    NASA Astrophysics Data System (ADS)

    Kaneki, Shota; Ohira, Joji; Toiya, Shota; Yatabe, Zenji; Asubar, Joel T.; Hashizume, Tamotsu

    2016-10-01

    Interface characterization was carried out on Al2O3/GaN structures using epitaxial n-GaN layers grown on free-standing GaN substrates with relatively low dislocation density (<3 × 106 cm-2). The Al2O3 layer was prepared by atomic layer deposition. The as-deposited metal-oxide-semiconductor (MOS) sample showed a significant frequency dispersion and a bump-like feature in capacitance-voltage (C-V) curves at reverse bias, showing high-density interface states in the range of 1012 cm-1 eV-1. On the other hand, excellent C-V characteristics with negligible frequency dispersion were observed from the MOS sample after annealing under a reverse bias at 300 °C in air for 3 h. The reverse-bias-annealed sample showed state densities less than 1 × 1011 cm-1 eV-1 and small shifts of flat-band voltage. In addition, the C-V curve measured at 200 °C remained essentially similar compared with the room-temperature C-V curves. These results indicate that the present process realizes a stable Al2O3/GaN interface with low interface state densities.

  15. Comparison of dislocation density tensor fields derived from discrete dislocation dynamics and crystal plasticity simulations of torsion

    DOE PAGES

    Jones, Reese E.; Zimmerman, Jonathan A.; Po, Giacomo; ...

    2016-02-01

    Accurate simulation of the plastic deformation of ductile metals is important to the design of structures and components to performance and failure criteria. Many techniques exist that address the length scales relevant to deformation processes, including dislocation dynamics (DD), which models the interaction and evolution of discrete dislocation line segments, and crystal plasticity (CP), which incorporates the crystalline nature and restricted motion of dislocations into a higher scale continuous field framework. While these two methods are conceptually related, there have been only nominal efforts focused at the global material response that use DD-generated information to enhance the fidelity of CPmore » models. To ascertain to what degree the predictions of CP are consistent with those of DD, we compare their global and microstructural response in a number of deformation modes. After using nominally homogeneous compression and shear deformation dislocation dynamics simulations to calibrate crystal plasticity ow rule parameters, we compare not only the system-level stress-strain response of prismatic wires in torsion but also the resulting geometrically necessary dislocation density fields. To establish a connection between explicit description of dislocations and the continuum assumed with crystal plasticity simulations we ascertain the minimum length-scale at which meaningful dislocation density fields appear. Furthermore, our results show that, for the case of torsion, that the two material models can produce comparable spatial dislocation density distributions.« less

  16. Comparison of dislocation density tensor fields derived from discrete dislocation dynamics and crystal plasticity simulations of torsion

    SciTech Connect

    Jones, Reese E.; Zimmerman, Jonathan A.; Po, Giacomo; Mandadapu, Kranthi

    2016-02-01

    Accurate simulation of the plastic deformation of ductile metals is important to the design of structures and components to performance and failure criteria. Many techniques exist that address the length scales relevant to deformation processes, including dislocation dynamics (DD), which models the interaction and evolution of discrete dislocation line segments, and crystal plasticity (CP), which incorporates the crystalline nature and restricted motion of dislocations into a higher scale continuous field framework. While these two methods are conceptually related, there have been only nominal efforts focused at the global material response that use DD-generated information to enhance the fidelity of CP models. To ascertain to what degree the predictions of CP are consistent with those of DD, we compare their global and microstructural response in a number of deformation modes. After using nominally homogeneous compression and shear deformation dislocation dynamics simulations to calibrate crystal plasticity ow rule parameters, we compare not only the system-level stress-strain response of prismatic wires in torsion but also the resulting geometrically necessary dislocation density fields. To establish a connection between explicit description of dislocations and the continuum assumed with crystal plasticity simulations we ascertain the minimum length-scale at which meaningful dislocation density fields appear. Furthermore, our results show that, for the case of torsion, that the two material models can produce comparable spatial dislocation density distributions.

  17. Dislocation density evolution during high pressure torsion of a nanocrystalline Ni-Fe alloy

    SciTech Connect

    Li, Hongqi; Wang, Y B; Ho, J C; Cao, Y; Liao, X Z; Ringer, S P; Zhu, Y T; Zhao, Y H; Lavernia, E J

    2009-01-01

    High-pressure torsion (HPT) induced dislocation density evolution in a nanocrystalline Ni-20wt.%Fe alloy was investigated using X-ray diffraction and transmission electron microscopy. Results suggest that the dislocation density evolution is different from that in coarse-grained materials. An HPT process first reduces the dislocation density within nanocrystalline grains and produces a large number of dislocations located at small-angle sub grain boundaries that are formed via grain rotation and coalescence. Continuing the deformation process eliminates the sub grain boundaries but significantly increases the dislocation density in grains. This phenomenon provides an explanation of the mechanical behavior of some nanostructured materials.

  18. Design rules for dislocation filters

    SciTech Connect

    Ward, T.; Sánchez, A. M.; Beanland, R.; Tang, M.; Wu, J.; Liu, H.; Dunstan, D. J.

    2014-08-14

    The efficacy of strained layer threading dislocation filter structures in single crystal epitaxial layers is evaluated using numerical modeling for (001) face-centred cubic materials, such as GaAs or Si{sub 1−x}Ge{sub x}, and (0001) hexagonal materials such as GaN. We find that threading dislocation densities decay exponentially as a function of the strain relieved, irrespective of the fraction of threading dislocations that are mobile. Reactions between threading dislocations tend to produce a population that is a balanced mixture of mobile and sessile in (001) cubic materials. In contrast, mobile threading dislocations tend to be lost very rapidly in (0001) GaN, often with little or no reduction in the immobile dislocation density. The capture radius for threading dislocation interactions is estimated to be approximately 40 nm using cross section transmission electron microscopy of dislocation filtering structures in GaAs monolithically grown on Si. We find that the minimum threading dislocation density that can be obtained in any given structure is likely to be limited by kinetic effects to approximately 10{sup 4}–10{sup 5 }cm{sup −2}.

  19. Low density GaN quantum dots on AlGaN

    NASA Astrophysics Data System (ADS)

    Pakuł, K.

    A new method of the growth of low-density GaN quantum dots on AlGaN by MOVPE is reported. The method bases on in-situ etching of the AlGaN surface in the presence of silane (SiH4) and subsequent growth of randomly nucleated GaN nano-crystallites. Investigation of successive growth stages with atomic force microscopy (AFM) shows that density of the GaN crystallites is of the order of 108 cm-2. Micro-photoluminescence (µPL) measurements show sharp emission lines originating from single quantum dots without any artificial masks or mesa structures. This gave unique possibility for advanced studies on optical and electrical properties of single GaN quantum dots in AlGaN.

  20. Dislocation Reduction Mechanisms in Gallium Nitride Films Grown by Canti-Bridge Epitaxy Method

    NASA Astrophysics Data System (ADS)

    Xing, Zhi-Gang; Wang, Jing; Pei, Xiao-Jiang; Wan, Wei; Chen, Hong; Zhou, Jun-Ming

    2007-08-01

    By using the special maskless V-grooved c-plane sapphire as the substrate, we previously developed a novel GaN LEO method, or the so-called canti-bridge epitaxy (CBE), and consequently wing-tilt-free GaN films were obtained with low dislocation densities, with which all the conventional difficulties can be overcome [J. Vacuum Sci. Technol. B 23 (2005) 2476]. Here the evolution manner of dislocations in the CBE GaN films is investigated using transmission electron microscopy. The mechanisms of dislocation reduction are discussed. Dislocation behaviour is found to be similar to that in the conventional LEO GaN films except the enhanced dislocation-combination at the coalescence boundary that is a major dislocation-reduction mechanism for the bent horizontal-propagating dislocations in the CBE GaN films. The enhancement of this dislocation-combination probability is believed to result from the inclined shape and the undulate morphology of the sidewalls, which can be readily obtained in a wide range of applicable film-growth conditions during the GaN CBE process. Further development of the GaN CBE method and better crystal-quality of the GaN film both are expected.

  1. Relationship of dislocation density of silicon to solar cell current loss at low temperature

    NASA Technical Reports Server (NTRS)

    Mandelkorn, J.; Baraona, C. R.; Lamneck, J. H., Jr.

    1972-01-01

    Large decreases in short circuit current of silicon solar cells have been reported to occur as temperature is decreased below -60 C. Experimental results are presented which relate high dislocation density of the silicon bulk material of cells to the large current loss effect. Solar cells were made by the same processes from a variety of silicon materials, namely low-dislocation-density, high-dislocation-density float-zone, and Czochralski silicon. All cells were etched in a manner which revealed the dislocation density of the cell bulk silicon. It was found that every cell made from any of the various low-dislocation starting materials obtained from three suppliers still had a low-dislocation bulk after cell processing, and that all such cells belonged to category good. Cells made from float-zone materials showed high dislocation densities in their bulk and either fell into category poor, or had intermediate losses of short-circuit current at low temperature.

  2. Low-dislocation-density epitatial layers grown by defect filtering by self-assembled layers of spheres

    DOEpatents

    Wang, George T.; Li, Qiming

    2013-04-23

    A method for growing low-dislocation-density material atop a layer of the material with an initially higher dislocation density using a monolayer of spheroidal particles to bend and redirect or directly block vertically propagating threading dislocations, thereby enabling growth and coalescence to form a very-low-dislocation-density surface of the material, and the structures made by this method.

  3. Evolution of deep centers in GaN grown by hydride vapor phaseepitaxy

    SciTech Connect

    Fang, Z.-Q.; Look, D.C.; Jasinski, J.; Benamara, M.; Liliental-Weber, Z.; Molnar, R.J.

    2001-04-18

    Deep centers and dislocation densities in undoped n GaN, grown by hydride vapor phase epitaxy (HVPE), were characterized as a function of the layer thickness by deep level transient spectroscopy and transmission electron microscopy, respectively. As the layer thickness decreases, the variety and concentration of deep centers increase, in conjunction with the increase of dislocation density. Based on comparison with electron irradiation induced centers, some dominant centers in HVPE GaN are identified as possible point defects.

  4. Estimation of dislocation density from precession electron diffraction data using the Nye tensor.

    PubMed

    Leff, A C; Weinberger, C R; Taheri, M L

    2015-06-01

    The Nye tensor offers a means to estimate the geometrically necessary dislocation density of a crystalline sample based on measurements of the orientation changes within individual crystal grains. In this paper, the Nye tensor theory is applied to precession electron diffraction automated crystallographic orientation mapping (PED-ACOM) data acquired using a transmission electron microscope (TEM). The resulting dislocation density values are mapped in order to visualize the dislocation structures present in a quantitative manner. These density maps are compared with other related methods of approximating local strain dependencies in dislocation-based microstructural transitions from orientation data. The effect of acquisition parameters on density measurements is examined. By decreasing the step size and spot size during data acquisition, an increasing fraction of the dislocation content becomes accessible. Finally, the method described herein is applied to the measurement of dislocation emission during in situ annealing of Cu in TEM in order to demonstrate the utility of the technique for characterizing microstructural dynamics.

  5. Dislocation-density based description of the deformation of a composite material

    NASA Astrophysics Data System (ADS)

    Schulz, K.; Sudmanns, M.; Gumbsch, P.

    2017-09-01

    Composite materials consisting of hard particles in a ductile metallic matrix are of major interest since their strength and deformability can be dramatically changed by varying volume fraction, size and shape of the particles. Understanding dislocation motion in composite materials as the cause of plastic deformation therefore is an important task. Recently, advanced dislocation-based continuum theories of plasticity have been developed for performing meaningful averages over systems of straight and curved dislocation lines in a continuum approach. In this paper, we focus on a single slip heterogeneous microstructure and investigate how the dislocation interactions can be represented in an averaged dislocation density based continuum description. The representation of strong dislocation density gradients is discussed in the context of a formulation, which aims at a coarse-grained resolution. We introduce a set of dislocation density evolution equations which account for the formation and dissolution of dislocation dipoles. By applying the model to a composite structure, we demonstrate that the dislocation density based description can well describe the physical processes in the microstructure and a comparison to discrete dislocation dynamics simulations shows good agreement for the relaxation behavior of the considered composites.

  6. Determination of edge and screw dislocation density in single crystals of high-purity iron

    SciTech Connect

    Park, Y.K.; Waber, J.T.; Snead, C.L. Jr.

    1985-01-01

    The trapping of positrons in dislocation-associated traps has been studied and the density of traps has been demonstrated to be in close agreement with the density of dislocations determined by TEM and etch-pit measurements on the same specimens. The specific trapping rates were determined.

  7. A New Method to Modify Two-Dimensional Electron Gas Density by GaN Cap Etching

    NASA Astrophysics Data System (ADS)

    Li, Zhongda; Chow, T. Paul

    2013-08-01

    We have experimentally demonstrated a new method for modifying the two-dimensional electron density (2DEG) at the AlGaN/GaN interface by etching of the GaN cap layer on top of the AlGaN. GaN MOS capacitors have been fabricated on samples with partially or fully etched GaN cap, and the 2DEG density has been extracted. The results show a linear relation between the 2DEG density and the thickness of the GaN cap being etched. We have also fabricated van der Pauw structures and obtained the 2DEG density using Hall measurements, and the results are consistent with that from the GaN MOS capacitors.

  8. The impact of substrate nitridation temperature and buffer design and synthesis on the polarity of GaN epitaxial films

    NASA Astrophysics Data System (ADS)

    Namkoong, Gon; Alan Doolittle, W.; Brown, April S.; Losurdo, Maria; Giangregorio, Maria M.; Bruno, Giovanni

    2003-05-01

    The polarity of GaN epitaxial layers grown on GaN and AlN buffer layers was investigated and found to be dependent on nitridation temperature over the range of 200-700°C. When low temperature (LT), 500°C, GaN buffer layers are used, GaN epitaxial layers grown on 200°C nitrided sapphire have a higher density of N-polar inversion domains. However, a high density of dislocation pits was observed on GaN epitaxial layers based on AFM morphology when GaN epitaxial layers were grown on LT GaN buffer of 700°C nitrided sapphire substrate. With high temperature (HT), 850°C, AlN buffer layers, the density of N-polar inversion domains in GaN epitaxial layers depends on the thickness of AlN buffer layer. The structural quality of Ga-polar GaN epitaxial layer is dramatically improved when LT GaN and HT AlN buffer layers are combined with an optimized annealing time. The measured full-widths at half-maximum of (0 0 0 2) symmetric and (1 0 .4) asymmetric reflections are 68 and 246 arcsec, respectively, for 1.0 μm GaN epitaxial layers. The results presented here can be implemented to produce low dislocation density, single Ga-polar GaN epitaxial layers.

  9. Density-dependent electron transport and precise modeling of GaN high electron mobility transistors

    SciTech Connect

    Bajaj, Sanyam Shoron, Omor F.; Park, Pil Sung; Krishnamoorthy, Sriram; Akyol, Fatih; Hung, Ting-Hsiang; Reza, Shahed; Chumbes, Eduardo M.; Khurgin, Jacob; Rajan, Siddharth

    2015-10-12

    We report on the direct measurement of two-dimensional sheet charge density dependence of electron transport in AlGaN/GaN high electron mobility transistors (HEMTs). Pulsed IV measurements established increasing electron velocities with decreasing sheet charge densities, resulting in saturation velocity of 1.9 × 10{sup 7 }cm/s at a low sheet charge density of 7.8 × 10{sup 11 }cm{sup −2}. An optical phonon emission-based electron velocity model for GaN is also presented. It accommodates stimulated longitudinal optical (LO) phonon emission which clamps the electron velocity with strong electron-phonon interaction and long LO phonon lifetime in GaN. A comparison with the measured density-dependent saturation velocity shows that it captures the dependence rather well. Finally, the experimental result is applied in TCAD-based device simulator to predict DC and small signal characteristics of a reported GaN HEMT. Good agreement between the simulated and reported experimental results validated the measurement presented in this report and established accurate modeling of GaN HEMTs.

  10. Size dependence of yield strength simulated by a dislocation-density function dynamics approach

    NASA Astrophysics Data System (ADS)

    Leung, P. S. S.; Leung, H. S.; Cheng, B.; Ngan, A. H. W.

    2015-04-01

    The size dependence of the strength of nano- and micron-sized crystals is studied using a new simulation approach in which the dynamics of the density functions of dislocations are modeled. Since any quantity of dislocations can be represented by a density, this approach can handle large systems containing large quantities of dislocations, which may handicap discrete dislocation dynamics schemes due to the excessive computation time involved. For this reason, pillar sizes spanning a large range, from the sub-micron to micron regimes, can be simulated. The simulation results reveal the power-law relationship between strength and specimen size up to a certain size, beyond which the strength varies much more slowly with size. For specimens smaller than ∼4000b, their strength is found to be controlled by the dislocation depletion condition, in which the total dislocation density remains almost constant throughout the loading process. In specimens larger than ∼4000b, the initial dislocation distribution is of critical importance since the presence of dislocation entanglements is found to obstruct deformation in the neighboring regions within a distance of ∼2000b. This length scale suggests that the effects of dense dislocation clusters are greater in intermediate-sized specimens (e.g. 4000b and 8000b) than in larger specimens (e.g. 16 000b), according to the weakest-link concept.

  11. Fabrication of large flat gallium nitride templates with extremely low dislocation densities in the 106 cm-2 range by novel two-side hydride vapor-phase epitaxial growth

    NASA Astrophysics Data System (ADS)

    Fujikura, Hajime; Konno, Taichiro

    2017-10-01

    Large GaN templates with high flatness (i.e., negligible wafer bowing and smooth as-grown surfaces) and low threading dislocation densities (TTDs) were fabricated by a novel two-side hydride vapor-phase epitaxial (HVPE) growth, beginning with deposition of polycrystalline GaN on the rear side of the wafer. Appropriate gas-flow management realized by our homemade HVPE system permitted the growth of a GaN layer with a smooth as-grown surface and excellent thickness uniformity on the front surfaces of 4- or 6-inch patterned sapphire substrates (PSSs). However, when the grown thickness exceeded 20 μm, single-side HVPE-growth induced fractures in GaN crystals. The fracture resistance of the GaN increased markedly when it was in a cleavage-resistant polycrystalline form (poly-GaN), permitting its growth to a thickness of 100 μm. In the presence of a back-side poly-GaN layer, extremely thick GaN crystal layers could be grown on the front side without fractures. An 80-μm-thick GaN template fabricated by two-side growth on a 4-inch PSS had a device-quality surface, negligible bowing, and low TDD (7 × 106 cm-2). Issues of high fabrication costs, unavailability of large-size wafers, and large off-angle variations associated with native GaN wafers could be overcome by using our high-quality GaN templates as alternative substrates.

  12. Intermittent dislocation density fluctuations in crystal plasticity from a phase-field crystal model.

    PubMed

    Tarp, Jens M; Angheluta, Luiza; Mathiesen, Joachim; Goldenfeld, Nigel

    2014-12-31

    Plastic deformation mediated by collective dislocation dynamics is investigated in the two-dimensional phase-field crystal model of sheared single crystals. We find that intermittent fluctuations in the dislocation population number accompany bursts in the plastic strain-rate fluctuations. Dislocation number fluctuations exhibit a power-law spectral density 1/f2 at high frequencies f. The probability distribution of number fluctuations becomes bimodal at low driving rates corresponding to a scenario where low density of defects alternates at irregular times with high populations of defects. We propose a simple stochastic model of dislocation reaction kinetics that is able to capture these statistical properties of the dislocation density fluctuations as a function of shear rate.

  13. New buffer layers for GaN on sapphire by atomic layer and molecular stream epitaxy

    SciTech Connect

    Piner, E.L.; He, Y.W.; Boutros, K.S.; McIntosh, F.G.; Roberts, J.C.; Bedair, S.M.; El-Masry, N.A.

    1996-11-01

    The current approach of depositing a low temperature then annealed AlN or GaN buffer for the growth of GaN on sapphire results in a high dislocation density. These dislocations thread through the GaN layer to the surface. Reducing their density either by growing thicker films or using a strained layer superlattice is ineffective. Two new approaches for AlN/GaN buffer layer growth for GaN on sapphire have been employed: Atomic Layer Epitaxy (ALE) and molecular Stream Epitaxy (MSE). ALE is distinguished by organo-metallic/ammonia separation while MSE is distinguished by cyclic annealing of the growing film. Both ALE and MSE enhance two dimensional growth of single crystal GaN on sapphire. The structural quality of epitaxial GaN grown on these buffer layers was studied by transmission electron microscopy (TEM) and x-ray diffraction (XRD). The initial result for the ALE buffer shows an improved quality GaN film with lower defect densities. The MSE grown buffer layer closely resembles that of conventionally grown MOCVD buffer layers observed by others, with dislocations threading through the GaN epilayer. The effects of these buffer layers on the structural and optical properties of GaN grown on sapphire will be presented.

  14. High Efficiency m-plane LEDs on Low Defect Density Bulk GaN Substrates

    SciTech Connect

    David, Aurelien

    2012-10-15

    Solid-state lighting is a key technology for reduction of energy consumption in the US and worldwide. In principle, by replacing standard incandescent bulbs and other light sources with sources based on light-emitting diodes (LEDs), ultimate energy efficiency can be achieved. The efficiency of LEDs has improved tremendously over the past two decades, however further progress is required for solid- state lighting to reach its full potential. The ability of an LED at converting electricity to light is quantified by its internal quantum efficiency (IQE). The material of choice for visible LEDs is Gallium Nitride (GaN), which is at the basis of blue-emitting LEDs. A key factor limiting the performance of GaN LEDs is the so-called efficiency droop, whereby the IQE of the LED decreases significantly at high current density. Despite decades of research, efficiency droop remains a major issue. Since high-current operation is necessary for practical lighting applications, reducing droop is a major challenge for the scientific community and the LED industry. Our approach to solving the droop issue is the use of newly available low-defect-density bulk GaN non-polar substrates. In contrast to the standard foreign substrates (sapphire, silicon carbide, silicon) used in the industry, we have employed native bulk GaN substrates with very low defect density, thus ensuring exquisite material quality and high IQE. Whereas all commercial LEDs are grown along the c-plane crystal direction of GaN, we have used m-plane non-polar substrates; these drastically modify the physical properties of the LED and enable a reduction of droop. With this approach, we have demonstrated very high IQE performance and low droop. Our results focused on violet and blue LEDs. For these, we have demonstrated very high peak IQEs and current droops of 6% and 10% respectively (up to a high current density of 200A.cm-2). All these results were obtained under electrical operation. These high IQE and low droop

  15. The application of water coupled nonlinear ultrasonics to quantify the dislocation density in aluminum 1100

    NASA Astrophysics Data System (ADS)

    Mostavi, Amir; Tehrani, N.; Kamali, N.; Ozevin, D.; Chi, S. W.; Indacochea, J. E.

    2017-02-01

    This article investigates water coupled nonlinear ultrasonic method to measure the dislocation density in aluminum 1100 specimens. The different levels of dislocation densities are introduced to the samples by applying different levels of plastic strains by tensile loading. The ultrasonic testing includes 2.25 MHz transducer as transmitter and 5.0 MHz transducer as receiver in an immersion tank. The results of immersion experiments are compared with oil-coupled experiments. While water has significant nonlinearity within itself, the immersion ultrasound results agree with the literature of oil coupled ultrasound results of the specimens that the nonlinearity coefficient increases with the increase of dislocation density in aluminum.

  16. GaN-Ready Aluminum Nitride Substrates for Cost-Effective, Very Low Dislocation Density III-Nitride LED's

    SciTech Connect

    Sandra Schujman; Leo Schowalter

    2010-10-15

    The objective of this project was to develop and then demonstrate the efficacy of a costeffective approach for a low defect density substrate on which AlInGaN LEDs can be fabricated. The efficacy of this “GaN-ready” substrate would then be tested by growing high efficiency, long lifetime InxGa1-xN blue LEDs. The approach used to meet the project objectives was to start with low dislocation density AlN single-crystal substrates and grow graded AlxGa1-xN layers on top. Pseudomorphic AlxGa1-xN epitaxial layers grown on bulk AlN substrates were used to fabricate light emitting diodes and demonstrate better device performance as a result of the low defect density in these layers when benched marked against state-of-the-art LEDs fabricated on sapphire substrates. The pseudomorphic LEDs showed excellent output powers compared to similar wavelength devices grown on sapphire substrates, with lifetimes exceeding 10,000 hours (which was the longest time that could reliably be estimated). In addition, high internal quantum efficiencies were demonstrated at high driving current densities even though the external quantum efficiencies were low due to poor photon extraction. Unfortunately, these pseudomorphic LEDs require high Al content so they emit in the ultraviolet. Sapphire based LEDs typically have threading dislocation densities (TDD) > 108 cm-2 while the pseudomorphic LEDs have TDD ≤ 105 cm-2. The resulting TDD, when grading the AlxGa1-xN layer all the way to pure GaN to produce a “GaN-ready” substrate, has varied between the mid 108 down to the 106 cm-2. These inconsistencies are not well understood. Finally, an approach to improve the LED structures on AlN substrates for light extraction efficiency was developed by thinning and roughening the substrate.

  17. Estimation of Dislocation Density in Cold-Rolled Commercially Pure Titanium by Using Synchrotron Diffraction

    NASA Astrophysics Data System (ADS)

    ALkhazraji, Hasan; Salih, Mohammed Z.; Zhong, Zhengye; Mhaede, Mansour; Brokmeier, Hans-Günter; Wagner, Lothar; Schell, N.

    2014-08-01

    Cold rolling (CR) leads to a heavy changes in the crystallographic texture and microstructure, especially crystal defects, such as dislocations, and stacking faults increase. The microstructure evolution in commercially pure titanium (cp-Ti) deformed by CR at the room temperature was determined by using the synchrotron peak profile analysis of full width at half maximum (FWHM). The computer program ANIZC has been used for the calculation of diffraction contrast factors of dislocations in elastically anisotropic hexagonal crystals. The dislocation density has a minimum value at 40 pct reduction. The increase of the dislocation density at higher deformation levels is caused by the nucleation of new generation of dislocations from the crystallite grain boundaries. The high-cycle fatigue strength (HCF) has a maximum value at 80 pct reduction and it has a minimum value at 40 pct reduction in the commercially pure titanium.

  18. Contactless Mobility, Carrier Density, and Sheet Resistance Measurements on Si, GaN, and AlGaN/GaN High Electron Mobility Transistor (HEMT) Wafers

    DTIC Science & Technology

    2015-02-01

    Si, GaN , and AlGaN/ GaN High Electron Mobility Transistor (HEMT) Wafers by Randy P Tompkins and Danh Nguyen Approved for...7209 ● FEB 2015 US Army Research Laboratory Contactless Mobility, Carrier Density, and Sheet Resistance Measurements on Si, GaN , and AlGaN/ GaN ...Resistance Measurements on Si, GaN , and AlGaN/ GaN High Electron Mobility Transistor (HEMT) Wafers 5a. CONTRACT NUMBER 5b. GRANT NUMBER 5c. PROGRAM

  19. Relationship of dislocation density of silicon to solar cell current loss at low temperature.

    NASA Technical Reports Server (NTRS)

    Mandelkorn, J.; Baraona, C. R.; Lamneck, J. H., Jr.

    1972-01-01

    Large decreases in short circuit current of silicon solar cells have been reported to occur as temperature is decreased below -60 C. Experimental results are presented which relate high dislocation density of the silicon bulk material of cells to the large current loss effect. These results reveal a direct relationship between low bulk dislocation density and low current loss at low temperature. Oxygen content does not appear to play a significant role in the low temperature-large current loss effect, since some Czochralski cells did not suffer from this effect whereas some float-zone cells did. Other float-zone silicon cells had only medium current losses at low temperature despite their high bulk dislocation density. It appears that use of low-dislocation-density silicon can eliminate the current loss problem in low temperature cell operation.

  20. Relationship of dislocation density of silicon to solar cell current loss at low temperature.

    NASA Technical Reports Server (NTRS)

    Mandelkorn, J.; Baraona, C. R.; Lamneck, J. H., Jr.

    1972-01-01

    Large decreases in short circuit current of silicon solar cells have been reported to occur as temperature is decreased below -60 C. Experimental results are presented which relate high dislocation density of the silicon bulk material of cells to the large current loss effect. These results reveal a direct relationship between low bulk dislocation density and low current loss at low temperature. Oxygen content does not appear to play a significant role in the low temperature-large current loss effect, since some Czochralski cells did not suffer from this effect whereas some float-zone cells did. Other float-zone silicon cells had only medium current losses at low temperature despite their high bulk dislocation density. It appears that use of low-dislocation-density silicon can eliminate the current loss problem in low temperature cell operation.

  1. Dislocation density of pure copper processed by accumulative roll bonding and equal-channel angular pressing

    SciTech Connect

    Miyajima, Yoji; Okubo, Satoshi; Abe, Hiroki; Okumura, Hiroki; Fujii, Toshiyuki; Onaka, Susumu; Kato, Masaharu

    2015-06-15

    The dislocation density of pure copper fabricated by two severe plastic deformation (SPD) processes, i.e., accumulative roll bonding and equal-channel angular pressing, was evaluated using scanning transmission electron microscopy/transmission electron microscopy observations. The dislocation density drastically increased from ~ 10{sup 13} m{sup −} {sup 2} to about 5 × 10{sup 14} m{sup −} {sup 2}, and then saturated, for both SPD processes.

  2. Mushroom structure of GaN template for epitaxial growth of GaN

    NASA Astrophysics Data System (ADS)

    Lee, Sung Bo; Kwon, Tae-Wan; Park, Jungwon; Jin Choi, Won; Sung Park, Hae

    2012-07-01

    In the present study, we show the formation of mushroom morphology produced by a ramp anneal of a low-temperature GaN buffer layer. Structural analysis by transmission electron microscopy indicates that the cap of the mushroom has the stable wurtzitic GaN structure, whereas the stem possesses the metastable zinc-blende structure. With the air gap introduced between the substrate and the cap of the mushroom structure, threading dislocations propagate along its stem. The formation of the mushroom morphology is suggested to result from the nucleation of wurtzitic GaN on the surface of the low-temperature buffer layer during the ramp anneal, followed by mass transport of GaN from the buffer layer, which remains zinc-blende during the anneal, to the surface, because wurtzitic GaN has the lower structure energy than zinc-blende GaN. This study extends limits of the conventional use of the buffer layer, laying the foundation for the development of low-cost recipes for achieving GaN templates with a low density of threading dislocations.

  3. Geometrically necessary dislocation densities in olivine obtained using high-angular resolution electron backscatter diffraction.

    PubMed

    Wallis, David; Hansen, Lars N; Ben Britton, T; Wilkinson, Angus J

    2016-09-01

    Dislocations in geological minerals are fundamental to the creep processes that control large-scale geodynamic phenomena. However, techniques to quantify their densities, distributions, and types over critical subgrain to polycrystal length scales are limited. The recent advent of high-angular resolution electron backscatter diffraction (HR-EBSD), based on diffraction pattern cross-correlation, offers a powerful new approach that has been utilised to analyse dislocation densities in the materials sciences. In particular, HR-EBSD yields significantly better angular resolution (<0.01°) than conventional EBSD (~0.5°), allowing very low dislocation densities to be analysed. We develop the application of HR-EBSD to olivine, the dominant mineral in Earth's upper mantle by testing (1) different inversion methods for estimating geometrically necessary dislocation (GND) densities, (2) the sensitivity of the method under a range of data acquisition settings, and (3) the ability of the technique to resolve a variety of olivine dislocation structures. The relatively low crystal symmetry (orthorhombic) and few slip systems in olivine result in well constrained GND density estimates. The GND density noise floor is inversely proportional to map step size, such that datasets can be optimised for analysing either short wavelength, high density structures (e.g. subgrain boundaries) or long wavelength, low amplitude orientation gradients. Comparison to conventional images of decorated dislocations demonstrates that HR-EBSD can characterise the dislocation distribution and reveal additional structure not captured by the decoration technique. HR-EBSD therefore provides a highly effective method for analysing dislocations in olivine and determining their role in accommodating macroscopic deformation. Copyright © 2016 The Authors. Published by Elsevier B.V. All rights reserved.

  4. High voltage and high current density vertical GaN power diodes

    SciTech Connect

    Fischer, A. J.; Dickerson, J. R.; Armstrong, A. M.; Moseley, M. W.; Crawford, M. H.; King, M. P.; Allerman, A. A.; Kaplar, R. J.; van Heukelom, M. S.; Wierer, J. J.

    2016-01-01

    We report on the realization of a GaN high voltage vertical p-n diode operating at > 3.9 kV breakdown with a specific on-resistance < 0.9 mΩ.cm2. Diodes achieved a forward current of 1 A for on-wafer, DC measurements, corresponding to a current density > 1.4 kA/cm2. An effective critical electric field of 3.9 MV/cm was estimated for the devices from analysis of the forward and reverse current-voltage characteristics. Furthermore this suggests that the fundamental limit to the GaN critical electric field is significantly greater than previously believed.

  5. High voltage and high current density vertical GaN power diodes

    DOE PAGES

    Fischer, A. J.; Dickerson, J. R.; Armstrong, A. M.; ...

    2016-01-01

    We report on the realization of a GaN high voltage vertical p-n diode operating at > 3.9 kV breakdown with a specific on-resistance < 0.9 mΩ.cm2. Diodes achieved a forward current of 1 A for on-wafer, DC measurements, corresponding to a current density > 1.4 kA/cm2. An effective critical electric field of 3.9 MV/cm was estimated for the devices from analysis of the forward and reverse current-voltage characteristics. Furthermore this suggests that the fundamental limit to the GaN critical electric field is significantly greater than previously believed.

  6. Strength of metals under vibrations - dislocation-density-function dynamics simulations

    NASA Astrophysics Data System (ADS)

    Cheng, B.; Leung, H. S.; Ngan, A. H. W.

    2015-06-01

    It is well known that ultrasonic vibration can soften metals, and this phenomenon has been widely exploited in industrial applications concerning metal forming and bonding. Recent experiments show that the simultaneous application of oscillatory stresses from audible to ultrasonic frequency ranges can lead to not only softening but also significant dislocation annihilation and subgrain formation in metal samples from the nano- to macro-size range. These findings indicate that the existing understanding of ultrasound softening - that the vibrations either impose additional stress waves to augment the quasi-static applied load, or cause heating of the metal, whereas the metal's intrinsic deformation resistance or mechanism remains unaltered - is far from complete. To understand the softening and the associated enhanced subgrain formation and dislocation annihilation, a new simulator based on the dynamics of dislocation-density functions is employed. This new simulator considers the flux, production and annihilation, as well as the Taylor and elastic interactions between dislocation densities. Softening during vibrations as well as enhanced cell formation is predicted. The simulations reveal the main mechanism for subcell formation under oscillatory loadings to be the enhanced elimination of statistically stored dislocations (SSDs) by the oscillatory stress, leaving behind geometrically necessary dislocations with low Schmid factors which then form the subgrain walls. The oscillatory stress helps the depletion of the SSDs, because the chance for them to meet up and annihilate is increased with reversals of dislocation motions. This is the first simulation effort to successfully predict the cell formation phenomenon under vibratory loadings.

  7. Stochastically forced dislocation density distribution in plastic deformation

    NASA Astrophysics Data System (ADS)

    Chattopadhyay, Amit K.; Aifantis, Elias C.

    2016-08-01

    The dynamical evolution of dislocations in plastically deformed metals is controlled by both deterministic factors arising out of applied loads and stochastic effects appearing due to fluctuations of internal stress. Such types of stochastic dislocation processes and the associated spatially inhomogeneous modes lead to randomness in the observed deformation structure. Previous studies have analyzed the role of randomness in such textural evolution, but none of these models have considered the impact of a finite decay time (all previous models assumed instantaneous relaxation which is "unphysical") of the stochastic perturbations in the overall dynamics of the system. The present article bridges this knowledge gap by introducing a colored noise in the form of an Ornstein-Uhlenbeck noise in the analysis of a class of linear and nonlinear Wiener and Ornstein-Uhlenbeck processes that these structural dislocation dynamics could be mapped on to. Based on an analysis of the relevant Fokker-Planck model, our results show that linear Wiener processes remain unaffected by the second time scale in the problem, but all nonlinear processes, both the Wiener type and Ornstein-Uhlenbeck type, scale as a function of the noise decay time τ . The results are expected to ramify existing experimental observations and inspire new numerical and laboratory tests to gain further insight into the competition between deterministic and random effects in modeling plastically deformed samples.

  8. Influence of the Dislocation Density on the Performance of Heteroepitaxial Indium Phosphide Solar Cells

    NASA Technical Reports Server (NTRS)

    Jain, R. K.; Flood, D. J.

    1991-01-01

    Calculations are made to study the dependence of heteroepitaxial InP solar-cell efficiency on dislocation density. Effects of surface recombination velocity and cell emitter thickness are considered. Calculated results are compared with the available experimental results on representative InP solar cells. It is shown that heteroepitaxial InP cells with over 20 percent AM0 efficiency could be fabricated if dislocations are reduced to less than 100,000/sq cm.

  9. Influence of the Dislocation Density on the Performance of Heteroepitaxial Indium Phosphide Solar Cells

    NASA Technical Reports Server (NTRS)

    Jain, R. K.; Flood, D. J.

    1991-01-01

    Calculations are made to study the dependence of heteroepitaxial InP solar-cell efficiency on dislocation density. Effects of surface recombination velocity and cell emitter thickness are considered. Calculated results are compared with the available experimental results on representative InP solar cells. It is shown that heteroepitaxial InP cells with over 20 percent AM0 efficiency could be fabricated if dislocations are reduced to less than 100,000/sq cm.

  10. A statistical analysis of the elastic distortion and dislocation density fields in deformed crystals

    NASA Astrophysics Data System (ADS)

    Mohamed, Mamdouh S.; Larson, Bennett C.; Tischler, Jonathan Z.; El-Azab, Anter

    2015-09-01

    The statistical properties of the elastic distortion fields of dislocations in deforming crystals are investigated using the method of discrete dislocation dynamics to simulate dislocation structures and dislocation density evolution under tensile loading. Probability distribution functions (PDF) and pair correlation functions (PCF) of the simulated internal elastic strains and lattice rotations are generated for tensile strain levels up to 0.85%. The PDFs of simulated lattice rotation are compared with sub-micrometer resolution three-dimensional X-ray microscopy measurements of rotation magnitudes and deformation length scales in 1.0% and 2.3% compression strained Cu single crystals to explore the linkage between experiment and the theoretical analysis. The statistical properties of the deformation simulations are analyzed through determinations of the Nye and Kröner dislocation density tensors. The significance of the magnitudes and the length scales of the elastic strain and the rotation parts of dislocation density tensors are demonstrated, and their relevance to understanding the fundamental aspects of deformation is discussed.

  11. A statistical analysis of the elastic distortion and dislocation density fields in deformed crystals

    DOE PAGES

    Mohamed, Mamdouh S.; Larson, Bennett C.; Tischler, Jonathan Z.; ...

    2015-05-18

    The statistical properties of the elastic distortion fields of dislocations in deforming crystals are investigated using the method of discrete dislocation dynamics to simulate dislocation structures and dislocation density evolution under tensile loading. Probability distribution functions (PDF) and pair correlation functions (PCF) of the simulated internal elastic strains and lattice rotations are generated for tensile strain levels up to 0.85%. The PDFs of simulated lattice rotation are compared with sub-micrometer resolution three-dimensional X-ray microscopy measurements of rotation magnitudes and deformation length scales in 1.0% and 2.3% compression strained Cu single crystals to explore the linkage between experiment and the theoreticalmore » analysis. The statistical properties of the deformation simulations are analyzed through determinations of the Nye and Kr ner dislocation density tensors. The significance of the magnitudes and the length scales of the elastic strain and the rotation parts of dislocation density tensors are demonstrated, and their relevance to understanding the fundamental aspects of deformation is discussed.« less

  12. A statistical analysis of the elastic distortion and dislocation density fields in deformed crystals

    SciTech Connect

    Mohamed, Mamdouh S.; Larson, Bennett C.; Tischler, Jonathan Z.; El-Azab, Anter

    2015-05-18

    The statistical properties of the elastic distortion fields of dislocations in deforming crystals are investigated using the method of discrete dislocation dynamics to simulate dislocation structures and dislocation density evolution under tensile loading. Probability distribution functions (PDF) and pair correlation functions (PCF) of the simulated internal elastic strains and lattice rotations are generated for tensile strain levels up to 0.85%. The PDFs of simulated lattice rotation are compared with sub-micrometer resolution three-dimensional X-ray microscopy measurements of rotation magnitudes and deformation length scales in 1.0% and 2.3% compression strained Cu single crystals to explore the linkage between experiment and the theoretical analysis. The statistical properties of the deformation simulations are analyzed through determinations of the Nye and Kr ner dislocation density tensors. The significance of the magnitudes and the length scales of the elastic strain and the rotation parts of dislocation density tensors are demonstrated, and their relevance to understanding the fundamental aspects of deformation is discussed.

  13. Direct evidence of single quantum dot emission from GaN islands formed at threading dislocations using nanoscale cathodoluminescence: A source of single photons in the ultraviolet

    SciTech Connect

    Schmidt, Gordon Berger, Christoph; Veit, Peter; Metzner, Sebastian; Bertram, Frank; Bläsing, Jürgen; Dadgar, Armin; Strittmatter, André; Christen, Jürgen; Callsen, Gordon; Kalinowski, Stefan; Hoffmann, Axel

    2015-06-22

    Intense emission from GaN islands embedded in AlN resulting from GaN/AlN quantum well growth is directly resolved by performing cathodoluminescence spectroscopy in a scanning transmission electron microscope. Line widths down to 440 μeV are measured in a wavelength region between 220 and 310 nm confirming quantum dot like electronic properties in the islands. These quantum dot states can be structurally correlated to islands of slightly enlarged thicknesses of the GaN/AlN quantum well layer preferentially formed in vicinity to dislocations. The quantum dot states exhibit single photon emission in Hanbury Brown-Twiss experiments with a clear antibunching in the second order correlation function at zero time delay.

  14. Dislocation Density-Based Constitutive Model for the Mechanical Behavior of Irradiated Cu

    SciTech Connect

    Arsenlis, A; Wirth, B D; Rhee, M

    2003-04-10

    Performance degradation of structural steels in nuclear environments results from the development of a high number density of nanometer scale defects. The defects observed in copper-based alloys are composed of vacancy clusters in the form of stacking fault tetrahedra and/or prismatic dislocation loops, which impede dislocation glide and are evidenced in macroscopic uniaxial stress-strain curves as increased yield strengths, decreased total strain to failure, decreased work hardening and the appearance of a distinct upper yield point above a critical defect concentration (neutron dose). In this paper, we describe the development of an internal state variable model for the mechanical behavior of materials subject to these environments. This model has been developed within an information-passing multiscale materials modeling framework, in which molecular dynamics simulations of dislocation--radiation defect interactions, inform the final coarse-grained continuum model. The plasticity model includes mechanisms for dislocation density growth and multiplication and for radiation defect density evolution with dislocation interaction. The general behavior of the constitutive (single material point) model shows that as the defect density increases, the initial yield point increases and the initial strain hardening decreases. The final coarse-grained model is implemented into a finite element framework and used to simulate the behavior of tensile specimens with varying levels of irradiation induced material damage. The simulation results compare favorably with the experimentally observed mechanical properties of irradiated materials in terms of their increased strength, decreased hardening, and decreased ductility with increasing irradiation dose.

  15. Estimations of bulk geometrically necessary dislocation density using high resolution EBSD.

    PubMed

    Ruggles, T J; Fullwood, D T

    2013-10-01

    Characterizing the content of geometrically necessary dislocations (GNDs) in crystalline materials is crucial to understanding plasticity. Electron backscatter diffraction (EBSD) effectively recovers local crystal orientation, which is used to estimate the lattice distortion, components of the Nye dislocation density tensor (α), and subsequently the local bulk GND density of a material. This paper presents a complementary estimate of bulk GND density using measurements of local lattice curvature and strain gradients from more recent high resolution EBSD (HR-EBSD) methods. A continuum adaptation of classical equations for the distortion around a dislocation are developed and used to simulate random GND fields to validate the various available approximations of GND content. Copyright © 2013 Elsevier B.V. All rights reserved.

  16. On the luminescence of freshly introduced a-screw dislocations in low-resistance GaN

    SciTech Connect

    Medvedev, O. S. Vyvenko, O. F.; Bondarenko, A. S.

    2015-09-15

    Using scanning electron microscopy in the cathodoluminescence mode, it is shown that straight segments of a-screw dislocations introduced by plastic deformation at room temperature into unintentionally doped low-resistance gallium nitride luminesce in the spectral range 3.1–3.2 eV at 70 K. The spectral composition of dislocation luminescence shows a fine doublet structure with a component width of ∼15 meV and splitting of ∼30 meV, accompanied by LO-phonon replicas. Luminescent screw dislocations move upon exposure to an electron beam and at low temperatures, but retain immobility for a long time without external excitation. Optical transitions involving the quantum-well states of a stacking fault in a split-dislocation core are considered to be the most probable mechanism of the observed phenomenon.

  17. Role of dislocation-free GaN substrates in the growth of indium containing optoelectronic structures by plasma-assisted MBE

    NASA Astrophysics Data System (ADS)

    Skierbiszewski, C.; Siekacz, M.; Perlin, P.; Feduniewicz-Żmuda, A.; Cywiński, G.; Grzegory, I.; Leszczyński, M.; Wasilewski, Z. R.; Porowski, S.

    2007-07-01

    Plasma-assisted molecular beam epitaxy (PAMBE) has recently emerged as a viable tool for production of nitride blue-violet laser diodes operating at room temperature in continuous wave mode and high output powers [C. Skierbiszewski, P. Wisniewski, M. Siekacz, P. Perlin, A. Feduniewicz-Zmuda, G. Nowak, I. Grzegory, M. Leszczynski, S. Porowski, Appl. Phys. Lett. 88 (2006) 221108]. The present work reviews the current state of the art in this program as well as discusses its future directions. Two elements are given particular attention: (1) the epitaxial growth in metal-rich conditions, which enables effective lateral diffusion of N adatoms at low growth temperatures and (2) the role of threading dislocations in destabilizing the growth front. Low-temperature growth by PAMBE on dislocation-free GaN substrates is instrumental in achieving high performance of optoelectronic structures. The inherent to this process capability of sustaining two-dimensional step-flow growth mode (with straight and parallel atomic steps) at low growth temperatures opens up the way to the growth of strained multilayer structures with no compositional fluctuations and with flat interfaces.

  18. Residual stress and dislocations density in silicon ribbons grown via optical zone melting

    NASA Astrophysics Data System (ADS)

    Augusto, A.; Pera, D.; Choi, H. J.; Bellanger, P.; Brito, M. C.; Maia Alves, J.; Vallêra, A. M.; Buonassisi, T.; Serra, J. M.

    2013-02-01

    We investigate the relationships between growth rate, time-temperature profile, residual stress, dislocation density, and electrical performance of silicon ribbons grown via optical zone melting. The time-temperature profiles of ribbons grown at different velocities were investigated using direct measurements and computational fluid dynamics (CFD) modeling. Residual stresses up to 20 MPa were measured using infrared birefringence imaging. The effect of crystallization speed on dislocation density and residual stress is discussed from the context of thermal stresses during growth. More broadly, we demonstrate the usefulness of combining spatially resolved stress and microstructure measurements with CFD simulations toward optimizing kerfless silicon wafer quality.

  19. Dislocation density evolution of AA 7020-T6 investigated by in-situ synchrotron diffraction under tensile load

    SciTech Connect

    Zhong, Z.Y.; Brokmeier, H.-G.; Gan, W.M.; Maawad, E.; Schwebke, B.; Schell, N.

    2015-10-15

    The dislocation density evolution along the loading axis of a textured AA 7020-T6 aluminum alloy during uniaxial tension was investigated by in-situ synchrotron diffraction. The highly parallel synchrotron beam at the High Energy Materials Science beamline P07 in PETRA III, DESY, offers excellent conditions to separate different influences for line broadening from which micro-strains are obtained using the modified Williamson–Hall method which is also for defect density investigations. During tensile loading the dislocation density evolution was documented from the as-received material (initial micro-strain state) to the relaxation of the strains during elastic deformation. After yield, the increasing rate of dislocation density growth was relatively fast till half-way between yield and UTS. After that, the rate started to decrease and the dislocation density fluctuated as the elongation increased due to the generation and annihilation of dislocations. When dislocation generation is dominant, the correlation between the flow stress and dislocation density satisfies the Taylor equation. Besides, a method to correct the thickness effect on peak broadening is developed in the present study. - Highlights: • In-situ synchrotron diffraction was applied to characterize peak broadening. • Dislocation evolution along the loading axis during uniaxial tension was investigated. • A method to correct the sample thickness effect on peak broadening was developed. • Dislocation density and flow stress satisfy the Taylor equation at a certain range. • The texture before load and after sample fracture was analyzed.

  20. The Variation of the Dislocation Density in Aluminum Deformed to Large Steady-State Creep Strains

    DTIC Science & Technology

    1986-03-01

    axis of the specimen) using a South Bay Technology Model 650 Low Speed Diamond Wheel Saw and a high concentration Buehler (.006") wafering blade...primary creep where the material experiences hardening. However, another explanation might be a high initial moble dislocation density associated with

  1. Effect of strain rate and dislocation density on the twinning behavior in Tantalum

    DOE PAGES

    Florando, Jeffrey N.; El-Dasher, Bassem S.; Chen, Changqiang; ...

    2016-04-28

    The conditions which affect twinning in tantalum have been investigated across a range of strain rates and initial dislocation densities. Tantalum samples were subjected to a range of strain rates, from 10–4/s to 103/s under uniaxial stress conditions, and under laser-induced shock-loading conditions. In this study, twinning was observed at 77K at strain rates from 1/s to 103/s, and during laser-induced shock experiments. The effect of the initial dislocation density, which was imparted by deforming the material to different amounts of pre-strain, was also studied, and it was shown that twinning is suppressed after a given amount of pre-strain, evenmore » as the global stress continues to increase. These results indicate that the conditions for twinning cannot be represented solely by a critical global stress value, but are also dependent on the evolution of the dislocation density. Additionally, the analysis shows that if twinning is initiated, the nucleated twins may continue to grow as a function of strain, even as the dislocation density continues to increase.« less

  2. Effect of strain rate and dislocation density on the twinning behavior in tantalum

    SciTech Connect

    Florando, Jeffrey N. Swift, Damian C.; Barton, Nathan R.; McNaney, James M.; Kumar, Mukul; El-Dasher, Bassem S.; Chen, Changqiang; Ramesh, K. T.; Hemker, Kevin J.

    2016-04-15

    The conditions which affect twinning in tantalum have been investigated across a range of strain rates and initial dislocation densities. Tantalum samples were subjected to a range of strain rates, from 10{sup −4}/s to 10{sup 3}/s under uniaxial stress conditions, and under laser-induced shock-loading conditions. In this study, twinning was observed at 77 K at strain rates from 1/s to 10{sup 3}/s, and during laser-induced shock experiments. The effect of the initial dislocation density, which was imparted by deforming the material to different amounts of pre-strain, was also studied, and it was shown that twinning is suppressed after a given amount of pre-strain, even as the global stress continues to increase. These results indicate that the conditions for twinning cannot be represented solely by a critical global stress value, but are also dependent on the evolution of the dislocation density. In addition, the analysis shows that if twinning is initiated, the nucleated twins may continue to grow as a function of strain, even as the dislocation density continues to increase.

  3. Measuring Depth-dependent Dislocation Densities and Elastic Strains in an Indented Ni-based Superalloy

    SciTech Connect

    Barabash, O.M.; Santella, M.; Barabash, R.I.; Ice, G.E.; Tischler, J.

    2011-12-14

    The indentation-induced elastic-plastic zone in an IN 740 Ni-based superalloy was studied by three-dimensional (3-D) x-ray microdiffraction and electron back scattering diffraction (EBSD). Large lattice reorientations and the formation of geometrically necessary dislocations are observed in the area with a radius of {approx}75 {mu}m. A residual compression zone is found close to the indent edge. An elastic-plastic transition is observed at {approx}20 {mu}m from the indent edge. Depth dependent dislocation densities are determined at different distances from the indent edge.

  4. High breakdown single-crystal GaN p-n diodes by molecular beam epitaxy

    SciTech Connect

    Qi, Meng; Zhao, Yuning; Yan, Xiaodong; Li, Guowang; Verma, Jai; Fay, Patrick; Nomoto, Kazuki; Zhu, Mingda; Hu, Zongyang; Protasenko, Vladimir; Song, Bo; Xing, Huili Grace; Jena, Debdeep; Bader, Samuel

    2015-12-07

    Molecular beam epitaxy grown GaN p-n vertical diodes are demonstrated on single-crystal GaN substrates. A low leakage current <3 nA/cm{sup 2} is obtained with reverse bias voltage up to −20 V. With a 400 nm thick n-drift region, an on-resistance of 0.23 mΩ cm{sup 2} is achieved, with a breakdown voltage corresponding to a peak electric field of ∼3.1 MV/cm in GaN. Single-crystal GaN substrates with very low dislocation densities enable the low leakage current and the high breakdown field in the diodes, showing significant potential for MBE growth to attain near-intrinsic performance when the density of dislocations is low.

  5. Critical issues for homoepitaxial GaN growth by molecular beam epitaxy on hydride vapor-phase epitaxy-grown GaN substrates

    NASA Astrophysics Data System (ADS)

    Storm, D. F.; Hardy, M. T.; Katzer, D. S.; Nepal, N.; Downey, B. P.; Meyer, D. J.; McConkie, Thomas O.; Zhou, Lin; Smith, David J.

    2016-12-01

    While the heteroepitaxial growth of gallium nitride-based materials and devices on substrates such as SiC, sapphire, and Si has been well-documented, the lack of a cost-effective source of bulk GaN crystals has hindered similar progress on homoepitaxy. Nevertheless, freestanding GaN wafers are becoming more widely available, and there is great interest in growing GaN films and devices on bulk GaN substrates, in order to take advantage of the greatly reduced density of threading dislocations, particularly for vertical devices. However, homoepitaxial GaN growth is far from a trivial task due to the reactivity and different chemical sensitivities of N-polar (000_1) and Ga-polar (0001) GaN surfaces, which can affect the microstructure and concentrations of impurities in homoepitaxial GaN layers. In order to achieve high quality, high purity homoepitaxial GaN, it is necessary to investigate the effect of the ex situ wet chemical clean, the use of in situ cleaning procedures, the sensitivity of the GaN surface to thermal decomposition, and the effect of growth temperature. We review the current understanding of these issues with a focus on homoepitaxial growth of GaN by molecular beam epitaxy (MBE) on c-plane surfaces of freestanding GaN substrates grown by hydride vapor phase epitaxy (HVPE), as HVPE-grown substrates are most widely available. We demonstrate methods for obtaining homoepitaxial GaN layers by plasma-assisted MBE in which no additional threading dislocations are generated from the regrowth interface and impurity concentrations are greatly reduced.

  6. Peierls potential of screw dislocations in bcc transition metals: Predictions from density functional theory

    SciTech Connect

    Weinberger, Christopher R.; Tucker, Garritt J.; Foiles, Stephen M.

    2013-02-01

    It is well known that screw dislocation motion dominates the plastic deformation in body-centered-cubic metals at low temperatures. The nature of the nonplanar structure of screw dislocations gives rise to high lattice friction, which results in strong temperature and strain rate dependence of plastic flow. Thus the nature of the Peierls potential, which is responsible for the high lattice resistance, is an important physical property of the material. However, current empirical potentials give a complicated picture of the Peierls potential. Here, we investigate the nature of the Peierls potential using density functional theory in the bcc transition metals. The results show that the shape of the Peierls potential is sinusoidal for every material investigated. Furthermore, we show that the magnitude of the potential scales strongly with the energy per unit length of the screw dislocation in the material.

  7. Bulk ammonothermal GaN

    NASA Astrophysics Data System (ADS)

    Dwiliński, R.; Doradziński, R.; Garczyński, J.; Sierzputowski, L. P.; Puchalski, A.; Kanbara, Y.; Yagi, K.; Minakuchi, H.; Hayashi, H.

    2009-05-01

    In this work, results of structural characterization of high-quality ammonothermal GaN are presented. Besides expected low dislocation density (being of the order of 10 3 cm -2) the most interesting feature seems perfect flatness of the crystal lattice of studied crystals. Regardless the size of crystals, lattice curvature radius exceeds 100 m, whereas better crystals reveal radius of several hundred meters and the best above 1000 m. Excellent crystallinity manifests in very narrow X-ray diffraction peaks of full-width at half-maximum (FWHM) values about 16 arcsec.

  8. Density of dislocations in CdHgTe heteroepitaxial structures on GaAs(013) and Si(013) substrates

    NASA Astrophysics Data System (ADS)

    Sidorov, Yu. G.; Yakushev, M. V.; Varavin, V. S.; Kolesnikov, A. V.; Trukhanov, E. M.; Sabinina, I. V.; Loshkarev, I. D.

    2015-11-01

    Epitaxial layers of Cd x Hg1- x Te (MCT) on GaAs(013) and Si(013) substrates were grown by molecular beam epitaxy. The introduction of ZnTe and CdTe intermediate layers into the structures made it possible to retain the orientation close to that of the substrate in MCT epitaxial layers despite the large mismatch between the lattice parameters. The structures were investigated using X-ray diffraction and transmission electron microscopy. The dislocation families predominantly removing the mismatch between the lattice parameters were found. Transmission electron microscopy revealed Γ-shaped misfit dislocations (MDs), which facilitated the annihilation of threading dislocations. The angles of rotation of the lattice due to the formation of networks of misfit dislocations were measured. It was shown that the density of threading dislocations in the active region of photodiodes is primarily determined by the network of misfit dislocations formed in the MCT/CdTe heterojunction. A decrease in the density of threading dislocations in the MCT film was achieved by cyclic annealing under conditions of the maximally facilitated nonconservative motion of dislocations. The dislocation density was determined from the etch pits.

  9. Characterization and density control of GaN nanodots on Si (111) by droplet epitaxy using plasma-assisted molecular beam epitaxy.

    PubMed

    Yu, Ing-Song; Chang, Chun-Pu; Yang, Chung-Pei; Lin, Chun-Ting; Ma, Yuan-Ron; Chen, Chun-Chi

    2014-01-01

    In this report, self-organized GaN nanodots have been grown on Si (111) by droplet epitaxy method, and their density can be controlled from 1.1 × 10(10) to 1.1 × 10(11) cm(-2) by various growth parameters, such as substrate temperatures for Ga droplet formation, the pre-nitridation treatment of Si substrate, the nitridation duration for GaN crystallization, and in situ annealing after GaN formation. Based on the characterization of in situ RHEED, we can observe the surface condition of Si and the formation of GaN nanodots on Si. The surface nitridaiton treatment at 600°C provides a-SiNx layer which makes higher density of GaN nanodots. Crystal GaN nanodots can be observed by the HRTEM. The surface composition of GaN nanodots can be analyzed by SPEM and μ-XPS with a synchrotron x-ray source. We can find GaN nanodots form by droplet epitaxy and then in situ annealing make higher-degree nitridation of GaN nanodots.

  10. Characterization and density control of GaN nanodots on Si (111) by droplet epitaxy using plasma-assisted molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Yu, Ing-Song; Chang, Chun-Pu; Yang, Chung-Pei; Lin, Chun-Ting; Ma, Yuan-Ron; Chen, Chun-Chi

    2014-12-01

    In this report, self-organized GaN nanodots have been grown on Si (111) by droplet epitaxy method, and their density can be controlled from 1.1 × 1010 to 1.1 × 1011 cm-2 by various growth parameters, such as substrate temperatures for Ga droplet formation, the pre-nitridation treatment of Si substrate, the nitridation duration for GaN crystallization, and in situ annealing after GaN formation. Based on the characterization of in situ RHEED, we can observe the surface condition of Si and the formation of GaN nanodots on Si. The surface nitridaiton treatment at 600°C provides a-SiNx layer which makes higher density of GaN nanodots. Crystal GaN nanodots can be observed by the HRTEM. The surface composition of GaN nanodots can be analyzed by SPEM and μ-XPS with a synchrotron x-ray source. We can find GaN nanodots form by droplet epitaxy and then in situ annealing make higher-degree nitridation of GaN nanodots.

  11. A molecular dynamics study of dislocation density generation and plastic relaxation during shock of single crystal Cu

    NASA Astrophysics Data System (ADS)

    Sichani, Mehrdad M.; Spearot, Douglas E.

    2016-07-01

    The molecular dynamics simulation method is used to investigate the dependence of crystal orientation and shock wave strength on dislocation density evolution in single crystal Cu. Four different shock directions <100>, <110>, <111>, and <321> are selected to study the role of crystal orientation on dislocation generation immediately behind the shock front and plastic relaxation as the system reaches the hydrostatic state. Dislocation density evolution is analyzed for particle velocities between the Hugoniot elastic limit ( up H E L ) for each orientation up to a maximum of 1.5 km/s. Generally, dislocation density increases with increasing particle velocity for all shock orientations. Plastic relaxation for shock in the <110>, <111>, and <321> directions is primarily due to a reduction in the Shockley partial dislocation density. In addition, plastic anisotropy between these orientations is less apparent at particle velocities above 1.1 km/s. In contrast, plastic relaxation is limited for shock in the <100> orientation. This is partially due to the emergence of sessile stair-rod dislocations with Burgers vectors of 1/3<100> and 1/6<110>. The nucleation of 1/6<110> dislocations at lower particle velocities is mainly due to the reaction between Shockley partial dislocations and twin boundaries. On the other hand, for the particle velocities above 1.1 km/s, the nucleation of 1/3<100> dislocations is predominantly due to reaction between Shockley partial dislocations at stacking fault intersections. Both mechanisms promote greater dislocation densities after relaxation for shock pressures above 34 GPa compared to the other three shock orientations.

  12. Dislocation- and crystallographic-dependent photoelectrochemical wet etching of gallium nitride

    NASA Astrophysics Data System (ADS)

    Gao, Y.; Craven, M. D.; Speck, J. S.; Den Baars, S. P.; Hu, E. L.

    2004-04-01

    Polarity and dislocation dependence study of photoelectrochemical wet etching on GaN was carried out on lateral epitaxial overgrown nonpolar (112¯0)a-GaN/(11¯02)r-plane sapphire substrate. This LEO nonpolar GaN sample has low dislocation density Ga- and N-faces exposed horizontally in opposite directions, which can be exposed to identical etching conditions for both polarity and dislocation dependence study. It is observed that N-face GaN is essentially much chemically active than Ga-face GaN, which shows the hexagonal pyramids with {101¯1¯} facets on the etched N face. No obvious etching was observed on Ga face in the same etch condition. As for dislocation dependence, the "wing" (low dislocation density) region was etched faster than the "window" (high dislocation density) region. Smooth etched surfaces were formed with the (1¯1¯22¯) facet as an etch stop plane both on Ga and N-wing region.

  13. Microstructure of GaN films grown on Si(1 1 1) substrates by metalorganic chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Hu, G. Q.; Kong, X.; Wan, L.; Wang, Y. Q.; Duan, X. F.; Lu, Y.; Liu, X. L.

    2003-09-01

    We report the transmission electron microscopy (TEM) study of the microstructure of wurtzitic GaN films grown on Si(1 1 1) substrates with AlN buffer layers by metalorganic chemical vapor deposition (MOCVD) method. An amorphous layer was formed at the interface between Si and AlN when thick GaN film was grown. We propose the amorphous layer was induced by the large stress at the interface when thick GaN was grown. The In 0.1Ga 0.9N/GaN multiple quantum well (MQW) reduced the dislocation density by obstructing the mixed and screw dislocations from passing through the MQW. But no evident reduction of the edge dislocations by the MQW was observed. It was found that dislocations located at the boundaries of grains slightly in-plane misoriented have screw component. Inversion domain is also observed.

  14. Determination of dislocation density by electron backscatter diffraction and X-ray line profile analysis in ferrous lath martensite

    SciTech Connect

    Berecz, Tibor; Jenei, Péter; Lábár, János; Gubicza, Jenő [Department of Materials Physics, Eötvös Loránd University, 1117 Budapest, Pázmány Péter sétány 1 and others

    2016-03-15

    The microstructure and the dislocation density in as-quenched ferrous lath martensite were studied by different methods. The blocks, packets and variants formed due to martensitic transformation were identified and their sizes were determined by electron backscatter diffraction (EBSD). Concomitant transmission electron microscopy (TEM) investigation revealed that the laths contain subgrains with the size between 50 and 100 nm. A novel evaluation procedure of EBSD images was elaborated for the determination of the density and the space distribution of geometrically necessary dislocations from the misorientation distribution. The total dislocation density obtained by X-ray diffraction line profile analysis was in good agreement with the value determined by EBSD, indicating that the majority of dislocations formed due to martensitic transformation during quenching are geometrically necessary dislocations.

  15. GaAsP solar cells on GaP/Si with low threading dislocation density

    NASA Astrophysics Data System (ADS)

    Yaung, Kevin Nay; Vaisman, Michelle; Lang, Jordan; Lee, Minjoo Larry

    2016-07-01

    GaAsP on Si tandem cells represent a promising path towards achieving high efficiency while leveraging the Si solar knowledge base and low-cost infrastructure. However, dislocation densities exceeding 108 cm-2 in GaAsP cells on Si have historically hampered the efficiency of such approaches. Here, we report the achievement of low threading dislocation density values of 4.0-4.6 × 106 cm-2 in GaAsP solar cells on GaP/Si, comparable with more established metamorphic solar cells on GaAs. Our GaAsP solar cells on GaP/Si exhibit high open-circuit voltage and quantum efficiency, allowing them to significantly surpass the power conversion efficiency of previous devices. The results in this work show a realistic path towards dual-junction GaAsP on Si cells with efficiencies exceeding 30%.

  16. Effect of dislocation density on thermal boundary conductance across GaSb/GaAs interfaces

    SciTech Connect

    Hopkins, Patrick E.; Duda, John C.; Clark, Stephen P.; Hains, Christopher P.; Rotter, Thomas J.; Balakrishnan, Ganesh; Phinney, Leslie M.

    2011-04-18

    We report on the thermal boundary conductance across structurally-variant GaSb/GaAs interfaces characterized by different dislocations densities, as well as variably-rough Al/GaSb interfaces. The GaSb/GaAs structures are epitaxially grown using both interfacial misfit (IMF) and non-IMF techniques. We measure the thermal boundary conductance from 100 to 450 K with time-domain thermoreflectance. The thermal boundary conductance across the GaSb/GaAs interfaces decreases with increasing strain dislocation density. We develop a model for interfacial transport at structurally-variant interfaces in which phonon propagation and scattering parallels photon attenuation. We find that this model describes the measured thermal boundary conductances well.

  17. Modeling of Threading Dislocation Density Reduction in Porous III-Nitride Layers

    NASA Astrophysics Data System (ADS)

    Artemiev, Dmitry M.; Orlova, Tatiana S.; Bougrov, Vladislav E.; Odnoblyudov, Maxim A.; Romanov, Alexei E.

    2015-05-01

    In this work, we report on the results of the theoretical analysis of threading dislocation (TD) density reduction in porous III-nitride layers grown in polar orientation. The reaction-kinetics model originally developed for describing TD evolution in growing bulk layers has been expanded to the case of the porous layer. The developed model takes into account TD inclinations under the influence of the pores as well as trapping TDs into the pores. It is demonstrated that both these factors increase the probability of dislocation reactions thus reducing the total density of TDs. The mean pore diameter acts as an effective interaction radius for the reactions among TDs. The model includes the main experimentally observed features of TD evolution in porous III-nitride layers.

  18. Growth of bulk GaN by HVPE on pressure grown seeds

    NASA Astrophysics Data System (ADS)

    Grzegory, I.; Łucznik, B.; Boćkowski, M.; Pastuszka, B.; Kryśko, M.; Kamler, G.; Nowak, G.; Porowski, S.

    2006-02-01

    Growth of GaN under pressure from solution in gallium results in almost dislocation free plate-like crystals but with size limited to app. 1-2 cm (lateral) and 100 μm (thickness) or up to about 1cm long needles. Deposition of GaN by HVPE on the pressure grown seeds allows stable crystallization (in terms of flatness of the crystallization front and uniformity of the new grown material) at a rate of about 100 μm/h on both types of seed crystals. However, in the thick GaN crystals grown on almost dislocation free plate-like substrates quite a high number of dislocations appears if the crystal thickness exceeds certain critical value. Since the critical thickness for defect generation is of the order of 100 μm, almost dislocation free layers (density below 10 4 cm -2) thinner than 100 μm can be grown. The most obvious further step is removing the substrate and continuation of the HVPE deposition on the free standing low dislocation density layer of sub-critical thickness. The pressure grown substrates were removed by mechanical polishing or conductivity sensitive electrochemical etching (for strongly n-type substrates). Then the HVPE low dislocation density GaN 1platelets were used as substrates for the growth of a few mm thick bulk GaN crystals. The crystals were characterized by defect selective etching of both polar (0001) and non-polar (10 -10) surfaces to check presence and distribution of structural defects. The X-ray measurements allowed concluding about character of strain and deformation in high pressure GaN-HVPE GaN system.

  19. Numerical analysis of the relation between dislocation density and residual strain in silicon ingots used in solar cells

    NASA Astrophysics Data System (ADS)

    Nakano, S.; Gao, B.; Jiptner, K.; Harada, H.; Miyamura, Y.; Sekiguchi, T.; Fukuzawa, M.; Kakimoto, K.

    2017-09-01

    We have developed a three dimensional Haasen-Alexander-Sumino model to investigate the distribution of dislocation density and residual strain in Si crystals and compared the calculation results with experimental data performed in mono-like and multicrystalline silicon ingots. The results show that the residual strain in a multicrystal is lower than in a mono-like crystal, whereas the dislocation density in the multicrystal is higher than that in the mono-like crystal. This phenomenon is due to the relation between dislocation density and residual strain caused by the difference of activated slip systems in a mono-like crystal and a multicrystal.

  20. DLTS study of n-type GaN grown by MOCVD on GaN substrates

    NASA Astrophysics Data System (ADS)

    Tokuda, Y.; Matsuoka, Y.; Ueda, H.; Ishiguro, O.; Soejima, N.; Kachi, T.

    2006-10-01

    Electron traps in n-type GaN layers grown homoepitaxially by MOCVD on free-standing GaN substrates have been characterized using DLTS for vertical Schottky diodes. Two free-standing HVPE GaN substrates (A and B), obtained from two different sources, are used. The Si-doped GaN layers with the thickness of 5 μm are grown on an area of 0.9×0.9 cm 2 of substrate A and on an area of 1×1 cm 2 of substrate B. Two traps labeled B1 (Ec-0.23 eV) and B2 (Ec-0.58 eV) are observed with trap B2 dominant in GaN on both substrates. There exist no dislocation-related traps which have been previously observed in MOCVD GaN on sapphire. This might be correlated to the reduction in dislocation density due to the homoepitaxial growth. However, it is found that there is a large variation, more than an order of magnitude, in trap B2 concentration and that the B2 spatial distributions are different between the two substrates used.

  1. Growth of freestanding GaN using pillar-epitaxial lateral overgrowth from GaN nanocolumns

    NASA Astrophysics Data System (ADS)

    Bougrioua, Z.; Gibart, P.; Calleja, E.; Jahn, U.; Trampert, A.; Ristic, J.; Utrera, M.; Nataf, G.

    2007-12-01

    Dislocation-free and strain-free GaN nanopillars, grown on Si by molecular beam epitaxy, were used as nanoseeds for a new form of epitaxial lateral overgrowth (ELO) by metalorganic vapour phase epitaxy (MOVPE) until full coalescence. Such overgrown GaN films are almost relaxed and were used as templates for producing thick GaN layers by halide vapour phase epitaxy (HVPE). The final GaN film is easily separated from the starting Si substrate. This is henceforth a new technology to produce freestanding GaN. The GaN crystal quality was assessed by transmission electron microscopy (TEM), photo- and cathodoluminescence (PL, CL). It was seen that the pillar-ELO is produced from a limited number of nanopillars. Some dislocations and basal stacking faults are formed during the coalescence. However, those that propagate parallel to the substrate do not replicate in the top layer and it is expected that the thickened material present a reduced defect density.

  2. A numerical spectral approach to solve the dislocation density transport equation

    NASA Astrophysics Data System (ADS)

    Djaka, K. S.; Taupin, V.; Berbenni, S.; Fressengeas, C.

    2015-09-01

    A numerical spectral approach is developed to solve in a fast, stable and accurate fashion, the quasi-linear hyperbolic transport equation governing the spatio-temporal evolution of the dislocation density tensor in the mechanics of dislocation fields. The approach relies on using the Fast Fourier Transform algorithm. Low-pass spectral filters are employed to control both the high frequency Gibbs oscillations inherent to the Fourier method and the fast-growing numerical instabilities resulting from the hyperbolic nature of the transport equation. The numerical scheme is validated by comparison with an exact solution in the 1D case corresponding to dislocation dipole annihilation. The expansion and annihilation of dislocation loops in 2D and 3D settings are also produced and compared with finite element approximations. The spectral solutions are shown to be stable, more accurate for low Courant numbers and much less computation time-consuming than the finite element technique based on an explicit Galerkin-least squares scheme.

  3. Fermi energy control of vacancy coalescence and dislocation density in melt-grown GaAs

    NASA Technical Reports Server (NTRS)

    Lagowski, J.; Gatos, H. C.; Lin, D. G.; Aoyama, T.

    1984-01-01

    A striking effect of the Fermi energy on the dislocation density in melt-grown GaAs has been discovered. Thus, a shift of the Fermi energy from 0.1 eV above to 0.2 eV below its intrinsic value (at high temperature, i.e., near 1100 K) increases the dislocation density by as much as five orders of magnitude. The Fermi energy shift was brought about by n-type and p-type doping at a level of about 10 to the 17th per cu cm (under conditions of optimum partial pressure of As, i.e., under optimum melt stoichiometry). This effect must be associated with the fact that the Fermi energy controls the charge state of vacancies (i.e., the occupancy of the associated electronic states) which in turn must control their tendency to coalesce and thus the dislocation density. It appears most likely that gallium vacancies are the critical species.

  4. Influence of vicinal sapphire substrate on the properties of N-polar GaN films grown by metal-organic chemical vapor deposition

    SciTech Connect

    Lin, Zhiyu; Zhang, Jincheng Xu, Shengrui; Chen, Zhibin; Yang, Shuangyong; Tian, Kun; Hao, Yue; Su, Xujun; Shi, Xuefang

    2014-08-25

    The influence of vicinal sapphire substrates on the growth of N-polar GaN films by metal-organic chemical vapor deposition is investigated. Smooth GaN films without hexagonal surface feature are obtained on vicinal substrate. Transmission electron microscope results reveal that basal-plane stacking faults are formed in GaN on vicinal substrate, leading to a reduction in threading dislocation density. Furthermore, it has been found that there is a weaker yellow luminescence in GaN on vicinal substrate than that on (0001) substrate, which might be explained by the different trends of the carbon impurity incorporation.

  5. Stress and Defect Control in GaN Using Low Temperature Interlayers

    SciTech Connect

    Akasaki, I.; Amano, H.; Chason, E.; Figiel, J.; Floro, J.A.; Han, J.; Hearne, S.; Iwaya, M.; Kashima, T.; Katsuragcawa, M.

    1998-12-04

    In organometallic vapor phase epitaxial growth of Gail on sapphire, the role of the low- temperature-deposited interlayers inserted between high-temperature-grown GaN layers was investigated by in situ stress measurement, X-ray diffraction, and transmission electron microscopy. Insertion of a series of low temperature GaN interlayers reduces the density of threading dislocations while simultaneously increasing the tensile stress during growth, ultimately resulting in cracking of the GaN film. Low temperature AIN interlayers were found to be effective in suppressing cracking by reducing tensile stress. The intedayer approach permits tailoring of the film stress to optimize film structure and properties.

  6. Static Recovery Modeling of Dislocation Density in a Cold Rolled Clad Aluminum Alloy

    NASA Astrophysics Data System (ADS)

    Penlington, Alex

    Clad alloys feature one or more different alloys bonded to the outside of a core alloy, with non-equilibrium, interalloy interfaces. There is limited understanding of the recovery and recrystallization behaviour of cold rolled clad aluminum alloys. In order to optimize the properties of such alloys, new heat treatment processes may be required that differ from what is used for the monolithic alloys. This study examines the recovery behaviour of a cold rolled Novelis Fusion(TM) alloy containing an AA6XXX core with an AA3003 cladding on one side. The bond between alloys appears microscopically discrete and continuous, but has a 30 microm wide chemical gradient. The as-deformed structure at the interalloy region consists of pancaked sub-grains with dislocations at the misorientation boundaries and a lower density organized within the more open interiors. X-ray line broadening was used to extract the dislocation density from the interalloy region and an equivalently deformed AA6XXX following static annealing using a modified Williamson-Hall analysis. This analysis assumed that Gaussian broadening contributions in a pseudo-Voigt function corresponded only to strain from dislocations. The kinetics of the dislocation density evolution to recrystallization were studied isothermally at 2 minute intervals, and isochronally at 175 and 205°C. The data fit the Nes model, in which the interalloy region recovered faster than AA6XXX at 175°C, but was slower at 205°C. This was most likely caused by change in texture and chemistry within this region such as over-aging of AA6XXX . Simulation of a continuous annealing and self homogenization process both with and without pre-recovery indicates a detectable, though small change in the texture and grain size in the interalloy region.

  7. Grain structure and dislocation density measurements in a friction stir welded aluminum alloy using x-ray peak profile analysis

    SciTech Connect

    Woo, Wan Chuck; Balogh, Levente; Ungar, Prof Tomas; Choo, Hahn; Feng, Zhili

    2008-01-01

    The dislocation density and grain structure of a friction stir welded 6061-T6 aluminum alloy was determined as a function of distance from the weld centerline using high-resolution micro-beam x-ray diffraction. The results of the x-ray peak profile analysis show that the dislocation density is about 1.2 x 10^14 m-2 inside and 4.8 x 10^14 m-2 outside of the weld region. The average subgrain size is about 180 nm in both regions. Compared to the base material, the dislocation density was significantly decreased in the dynamic recrystallized zone of the friction stir welds, which is a good correlation with the TEM observations. The influence of the dislocation density on the strain hardening behavior during tensile deformation is also discussed.

  8. Weak-beam scanning transmission electron microscopy for quantitative dislocation density measurement in steels.

    PubMed

    Yoshida, Kenta; Shimodaira, Masaki; Toyama, Takeshi; Shimizu, Yasuo; Inoue, Koji; Yoshiie, Toshimasa; Milan, Konstantinovic J; Gerard, Robert; Nagai, Yasuyoshi

    2017-04-01

    To evaluate dislocations induced by neutron irradiation, we developed a weak-beam scanning transmission electron microscopy (WB-STEM) system by installing a novel beam selector, an annular detector, a high-speed CCD camera and an imaging filter in the camera chamber of a spherical aberration-corrected transmission electron microscope. The capabilities of the WB-STEM with respect to wide-view imaging, real-time diffraction monitoring and multi-contrast imaging are demonstrated using typical reactor pressure vessel steel that had been used in an European nuclear reactor for 30 years as a surveillance test piece with a fluence of 1.09 × 1020 neutrons cm-2. The quantitatively measured size distribution (average loop size = 3.6 ± 2.1 nm), number density of the dislocation loops (3.6 × 1022 m-3) and dislocation density (7.8 × 1013 m m-3) were carefully compared with the values obtained via conventional weak-beam transmission electron microscopy studies. In addition, cluster analysis using atom probe tomography (APT) further demonstrated the potential of the WB-STEM for correlative electron tomography/APT experiments. © The Author 2017. Published by Oxford University Press on behalf of The Japanese Society of Microscopy. All rights reserved. For permissions, please e-mail: journals.permissions@oup.com.

  9. Air-bridged lateral epitaxial overgrowth of GaN thin films

    NASA Astrophysics Data System (ADS)

    Kidoguchi, Isao; Ishibashi, Akihiko; Sugahara, Gaku; Ban, Yuzaburoh

    2000-06-01

    A promising technique of selective lateral epitaxy, namely air-bridged lateral epitaxial overgrowth, is demonstrated in order to reduce the wing tilt as well as the threading dislocation density in GaN thin films. A seed GaN layer was etched to make ridge-stripe along <11¯00>GaN direction and a GaN material was regrown from the exposed (0001) top facet of the ridged GaN seed structures, whose sidewalls and etched bottoms were covered with silicon nitride mask, using low-pressure metalorganic vapor phase epitaxy. The density of dislocations in the wing region was reduced to be <107cm-2, which was at least two orders of magnitude lower than that of underlying GaN. The magnitude of the wing tilt was determined to be 0.08° by x-ray diffraction (XRD) measurements, which was smaller than other lateral epitaxial overgrown GaN thin films. The full width at half maximum of XRD for the wing region was 138 arc sec, indicating high uniformity of c-axis orientation.

  10. Threading dislocation density characterization in III-V photovoltaic materials by electron channeling contrast imaging

    NASA Astrophysics Data System (ADS)

    Yaung, Kevin Nay; Kirnstoetter, Stefan; Faucher, Joseph; Gerger, Andy; Lochtefeld, Anthony; Barnett, Allen; Lee, Minjoo Larry

    2016-11-01

    Accurate and rapid threading dislocation density (TDD) characterization of III-V photovoltaic materials using electron channeling contrast imaging (ECCI) is demonstrated. TDDs measured using ECCI showed close agreement with those from electron beam-induced current mapping (EBIC) and defect selective etching (DSE). ECCI is shown to be well-suited for measuring TDD values over a range of 5×106-5×108 cm-2. ECCI can distinguish individual dislocations in clusters closer than 0.2 μm, highlighting its excellent spatial resolution compared to DSE and EBIC. Taken together, ECCI is shown to be a versatile and complementary method to rapidly quantify TDD in III-V solar cells.

  11. A dislocation density-based continuum model of the anisotropic shock response of single crystal α-cyclotrimethylene trinitramine

    NASA Astrophysics Data System (ADS)

    Luscher, D. J.; Addessio, F. L.; Cawkwell, M. J.; Ramos, K. J.

    2017-01-01

    We have developed a model for the finite deformation thermomechanical response of α-cyclotrimethylene trinitramine (RDX). Our model accounts for nonlinear thermoelastic lattice deformation through a free energy-based equation of state developed by Cawkwell et al. (2016) in combination with temperature and pressure dependent elastic constants, as well as dislocation-mediated plastic slip on a set of slip systems motivated by experimental observation. The kinetics of crystal plasticity are modeled using the Orowan equation relating slip rate to dislocation density and the dislocation velocity developed by Austin and McDowell (2011), which naturally accounts for transition from thermally activated to dislocation drag limited regimes. Evolution of dislocation density is specified in terms of local ordinary differential equations reflecting dislocation-dislocation interactions. This paper presents details of the theory and parameterization of the model, followed by discussion of simulations of flyer plate impact experiments. Impact conditions explored within this combined simulation and experimental effort span shock pressures ranging from 1 to 3 GPa for four crystallographic orientations and multiple specimen thicknesses. Simulation results generated using this model are shown to be in strong agreement with velocimetry measurements from the corresponding plate impact experiments. Finally, simulation results are used to motivate conclusions about the nature of dislocation-mediated plasticity in RDX.

  12. MOCVD growth of N-polar GaN on on-axis sapphire substrate: Impact of AlN nucleation layer on GaN surface hillock density

    NASA Astrophysics Data System (ADS)

    Marini, Jonathan; Leathersich, Jeffrey; Mahaboob, Isra; Bulmer, John; Newman, Neil; (Shadi) Shahedipour-Sandvik, F.

    2016-05-01

    We report on the impact of growth conditions on surface hillock density of N-polar GaN grown on nominally on-axis (0001) sapphire substrate by metal organic chemical vapor deposition (MOCVD). Large reduction in hillock density was achieved by implementation of an optimized high temperature AlN nucleation layer and use of indium surfactant in GaN overgrowth. A reduction by more than a factor of five in hillock density from 1000 to 170 hillocks/cm-2 was achieved as a result. Crystal quality and surface morphology of the resultant GaN films were characterized by high resolution x-ray diffraction and atomic force microscopy and found to be relatively unaffected by the buffer conditions. It is also shown that the density of smaller surface features is unaffected by AlN buffer conditions.

  13. Highly transparent ammonothermal bulk GaN substrates

    SciTech Connect

    Jiang, WK; Ehrentraut, D; Downey, BC; Kamber, DS; Pakalapati, RT; Do Yoo, H; D'Evelyn, MP

    2014-10-01

    A novel apparatus has been employed to grow ammonothermal (0001) gallium nitride (GaN) with diameters up to 2 in The crystals have been characterized by x-ray diffraction rocking-curve (XRC) analysis, optical and scanning electron microscopy (SEM), cathodoluminescence (CL), and optical spectroscopy. High crystallinity GaN with FWHM values about 20-50 arcsec and dislocation densities below 1 x 10(5) cm(-2) have been obtained. High optical transmission was achieved with an optical absorption coefficient below 1 cm(-1) at a wavelength of 450 nm. (C) 2014 Elsevier B.V. All rights reserved.

  14. Electrical characterization of dislocations in gallium nitride using advanced scanning probe techniques

    NASA Astrophysics Data System (ADS)

    Simpkins, Blake Shelley Ginsberg

    GaN-based materials are promising for high speed and power applications such as amplifier and communications circuits. Ga, In, and AIN-based alloys span a wide optical range (2--6.1 eV) and exhibit strong polarizations making them useful in many devices; however, films are highly defective (˜10 8 dislocations cm-2) due to lack of suitable substrates. Thus, nanoscale electronic characterization of these dislocations is critical for device and growth optimization. Scanning probe techniques enable characterization at length-scales unattainable by conventional techniques. First, scanning Kelvin probe microscopy (SKPM) was used to image surface potential variations due to charged dislocations in HVPE-grown GaN. The film's structural evolution "with thickness was monitored showing a decrease in dislocation density, likely through dislocation reaction. Numerical simulations were used to investigate tip-size effects when imaging highly localized (tens of nm) potential variations indicating that measured dislocation induced potential features in GaN can be much smaller (˜80%) than true variations. Next, capacitance variations in MBE-grown HFETs, due to dislocations-induced carrier depletion, were imaged with scanning capacitance microscopy (SCM). The distribution of these charged centers was correlated with buffer schemes showing that an AIN buffer leads to pseudomorphic (2D) nucleation and randomly distributed misfit dislocations while deposition directly on SiC results in island (3D) nucleation and a domain structure with dislocations grouped at domain boundaries. Hall measurements and numerical simulations were also carried out to further study the implications of these microstructures. Numerical results indicated that randomly distributed dislocations deplete a larger fraction of free carriers than the same density of grouped dislocations and correlated favorably with Hall results. Correlated SKPM and conductive AFM (C-AFM) measurements were then used to study

  15. Comparison of the dislocation density obtained by HR-EBSD and X-ray profile analysis

    NASA Astrophysics Data System (ADS)

    Kalácska, Szilvia; Groma, István; Borbély, András; Ispánovity, Péter Dusán

    2017-02-01

    Based on the cross-correlation analysis of the Kikuchi diffraction patterns, high-resolution electron backscatter diffraction (HR-EBSD) is a well established method for determining internal stress in the deformed crystalline materials. In many cases, however, the stress values evaluated at different sampling points have a large scatter of the order of GPa. As demonstrated by Wilkinson et al. [Appl. Phys. Lett. 105, 181907 (2014)], this is due to the long tail of the probability distribution (P(σ)) of the eigenstress generated by the dislocations present in the system. According to the theoretical investigations of Groma and Bakó [Phys. Rev. B 58, 2969 (1998)], the tail of P(σ) is inverse cubic with a prefactor proportional to the total dislocation density ⟨ρ⟩. This paper presents the details of ⟨ρ⟩ determination from P(σ) contributing to the proper physical understanding of the method. The ⟨ρ⟩ values determined on the deformed Cu single crystals show good agreement with the results of X-ray line profile analysis, granting credibility to the EBSD approach. The availability of spatially resolved stress maps opens further perspectives for the evaluation of correlation properties and mesoscale parameters of heterogeneous dislocation structures.

  16. Application of a Dislocation Density-Based Constitutive Model to Al-Alloyed TWIP Steel

    NASA Astrophysics Data System (ADS)

    Kim, Jinkyung; Estrin, Yuri; De Cooman, Bruno Charles

    2013-09-01

    High Mn steels exhibit an exceptional combination of high strength and large ductility owing to their high strain-hardening rate during deformation. The addition of Al is needed to improve the mechanical performance of TWIP steel by means of the control of the stacking fault energy. In this study, a constitutive modeling approach, which can describe the strain-hardening behavior and the effect of Al on the mechanical properties, was used. In order to understand the deformation behavior of Fe18Mn0.6C and Fe18Mn0.6C1.5Al TWIP steels, a comparative study of the microstructural evolution was conducted by means of transmission electron microscopy and electron backscatter diffraction. The microstructure analysis focused on dislocations, stacking faults, and mechanical twins as these are the defects controlling the strain-hardening behavior of TWIP steels. A comparison of the strain-hardening behavior of Fe18Mn0.6C and Fe18Mn0.6C1.5Al TWIP steels was made in terms of a dislocation density-based constitutive model that goes back to the Kubin-Estrin model. The densities of mobile and forest dislocations are coupled in order to account for the interaction between the two dislocation populations during straining. The model was used to estimate the contribution of dynamic strain aging to the flow stress. As deformation twinning occurred only in a subset of the grains, the grain population was subdivided into twinned grains and twin-free grains. Different constitutive equations were used for the two families of grains. The analysis revealed that (i) the grain size and dynamic recovery effects determine the strain-hardening behavior of the twin-free grains, (ii) the deformation twins, which act as effective barriers to dislocation motion, are the predominant elements of the microstructure that governs the strain hardening of the twinned grains, and (iii) the DSA contribution to strain hardening of TWIP steel is only minor.

  17. Preparation of Freestanding GaN Wafers by Hydride Vapor Phase Epitaxy with Void-Assisted Separation

    NASA Astrophysics Data System (ADS)

    Oshima, Yuichi; Eri, Takeshi; Shibata, Masatomo; Sunakawa, Haruo; Kobayashi, Kenji; Ichihashi, Toshinari; Usui, Akira

    2003-01-01

    We have developed a novel technique for preparing large-scale freestanding GaN wafers. Hydride vapor phase epitaxy (HVPE) growth of thick GaN layer was performed on a GaN template with a thin TiN film on the top. After the cooling process of the HVPE growth, the thick GaN layer was easily separated from the template by the assistance of many voids generated around the TiN film. As a result, a freestanding GaN wafer was obtained. The wafer obtained had a diameter of 45 mm, and a mirror-like surface. The-full-width-at-half-maximum (FWHM) of (0002) and (10\\bar{1}0) peaks in the X-ray rocking curve profile were 60 and 92 arcsec, respectively. The dislocation density was evaluated at 5× 106 cm-3 by etch pit density measurement.

  18. A convergent scheme for a non-local coupled system modelling dislocations densities dynamics

    NASA Astrophysics Data System (ADS)

    Hajj, A. El; Forcadel, N.

    2008-06-01

    In this paper, we study a non-local coupled system that arises in the theory of dislocations densities dynamics. Within the framework of viscosity solutions, we prove a long time existence and uniqueness result for the solution of this model. We also propose a convergent numerical scheme and we prove a Crandall-Lions type error estimate between the continuous solution and the numerical one. As far as we know, this is the first error estimate of Crandall-Lions type for Hamilton-Jacobi systems. We also provide some numerical simulations.

  19. A dislocation density-based continuum model of the anisotropic shock response of single crystal α-cyclotrimethylene trinitramine

    SciTech Connect

    Luscher, Darby Jon; Addessio, Francis L.; Cawkwell, Marc Jon; Ramos, Kyle James

    2017-01-01

    Here, we have developed a model for the finite deformation thermomechanical response of α-cyclotrimethylene trinitramine (RDX). Our model accounts for nonlinear thermoelastic lattice deformation through a free energy-based equation of state developed by Cawkwell et al. (2016) in combination with temperature and pressure dependent elastic constants, as well as dislocation-mediated plastic slip on a set of slip systems motivated by experimental observation. The kinetics of crystal plasticity are modeled using the Orowan equation relating slip rate to dislocation density and the dislocation velocity developed by Austin and McDowell (2011), which naturally accounts for transition from thermally activated to dislocation drag limited regimes. Evolution of dislocation density is specified in terms of local ordinary differential equations reflecting dislocation–dislocation interactions. This paper presents details of the theory and parameterization of the model, followed by discussion of simulations of flyer plate impact experiments. Impact conditions explored within this combined simulation and experimental effort span shock pressures ranging from 1 to 3 GPa for four crystallographic orientations and multiple specimen thicknesses. Simulation results generated using this model are shown to be in strong agreement with velocimetry measurements from the corresponding plate impact experiments. Finally, simulation results are used to motivate conclusions about the nature of dislocation-mediated plasticity in RDX.

  20. A dislocation density-based continuum model of the anisotropic shock response of single crystal α-cyclotrimethylene trinitramine

    DOE PAGES

    Luscher, Darby Jon; Addessio, Francis L.; Cawkwell, Marc Jon; ...

    2017-01-01

    Here, we have developed a model for the finite deformation thermomechanical response of α-cyclotrimethylene trinitramine (RDX). Our model accounts for nonlinear thermoelastic lattice deformation through a free energy-based equation of state developed by Cawkwell et al. (2016) in combination with temperature and pressure dependent elastic constants, as well as dislocation-mediated plastic slip on a set of slip systems motivated by experimental observation. The kinetics of crystal plasticity are modeled using the Orowan equation relating slip rate to dislocation density and the dislocation velocity developed by Austin and McDowell (2011), which naturally accounts for transition from thermally activated to dislocation dragmore » limited regimes. Evolution of dislocation density is specified in terms of local ordinary differential equations reflecting dislocation–dislocation interactions. This paper presents details of the theory and parameterization of the model, followed by discussion of simulations of flyer plate impact experiments. Impact conditions explored within this combined simulation and experimental effort span shock pressures ranging from 1 to 3 GPa for four crystallographic orientations and multiple specimen thicknesses. Simulation results generated using this model are shown to be in strong agreement with velocimetry measurements from the corresponding plate impact experiments. Finally, simulation results are used to motivate conclusions about the nature of dislocation-mediated plasticity in RDX.« less

  1. A dislocation density-based continuum model of the anisotropic shock response of single crystal α-cyclotrimethylene trinitramine

    DOE PAGES

    Luscher, Darby Jon; Addessio, Francis L.; Cawkwell, Marc Jon; ...

    2017-01-01

    Here, we have developed a model for the finite deformation thermomechanical response of α-cyclotrimethylene trinitramine (RDX). Our model accounts for nonlinear thermoelastic lattice deformation through a free energy-based equation of state developed by Cawkwell et al. (2016) in combination with temperature and pressure dependent elastic constants, as well as dislocation-mediated plastic slip on a set of slip systems motivated by experimental observation. The kinetics of crystal plasticity are modeled using the Orowan equation relating slip rate to dislocation density and the dislocation velocity developed by Austin and McDowell (2011), which naturally accounts for transition from thermally activated to dislocation dragmore » limited regimes. Evolution of dislocation density is specified in terms of local ordinary differential equations reflecting dislocation–dislocation interactions. This paper presents details of the theory and parameterization of the model, followed by discussion of simulations of flyer plate impact experiments. Impact conditions explored within this combined simulation and experimental effort span shock pressures ranging from 1 to 3 GPa for four crystallographic orientations and multiple specimen thicknesses. Simulation results generated using this model are shown to be in strong agreement with velocimetry measurements from the corresponding plate impact experiments. Finally, simulation results are used to motivate conclusions about the nature of dislocation-mediated plasticity in RDX.« less

  2. A dislocation density-based continuum model of the anisotropic shock response of single crystal α-cyclotrimethylene trinitramine

    SciTech Connect

    Luscher, Darby Jon; Addessio, Francis L.; Cawkwell, Marc Jon; Ramos, Kyle James

    2017-01-01

    Here, we have developed a model for the finite deformation thermomechanical response of α-cyclotrimethylene trinitramine (RDX). Our model accounts for nonlinear thermoelastic lattice deformation through a free energy-based equation of state developed by Cawkwell et al. (2016) in combination with temperature and pressure dependent elastic constants, as well as dislocation-mediated plastic slip on a set of slip systems motivated by experimental observation. The kinetics of crystal plasticity are modeled using the Orowan equation relating slip rate to dislocation density and the dislocation velocity developed by Austin and McDowell (2011), which naturally accounts for transition from thermally activated to dislocation drag limited regimes. Evolution of dislocation density is specified in terms of local ordinary differential equations reflecting dislocation–dislocation interactions. This paper presents details of the theory and parameterization of the model, followed by discussion of simulations of flyer plate impact experiments. Impact conditions explored within this combined simulation and experimental effort span shock pressures ranging from 1 to 3 GPa for four crystallographic orientations and multiple specimen thicknesses. Simulation results generated using this model are shown to be in strong agreement with velocimetry measurements from the corresponding plate impact experiments. Finally, simulation results are used to motivate conclusions about the nature of dislocation-mediated plasticity in RDX.

  3. Selective area growth of high-density GaN nanowire arrays on Si(111) using thin AlN seeding layers

    NASA Astrophysics Data System (ADS)

    Wu, C. H.; Lee, P. Y.; Chen, K. Y.; Tseng, Y. T.; Wang, Y. L.; Cheng, K. Y.

    2016-11-01

    Selective area growth (SAG) of high-density (2.5×109 cm-2) GaN nanowires (NWs) on Si(111) substrate by plasma-assisted molecular beam epitaxy is presented. The effects of morphology and thickness of the AlN seeding layer on the quality of SAG GaN NWs are investigated. A thin AlN seeding layer of 30 nm thick with a surface roughness of less than 0.5 nm is suitable for high quality SAG GaN NWs growth. High-density AlN nanopedestal arrays used as seeds for SAG GaN NWs are fabricated from thin AlN seeding layers using soft nanoimprint lithography. By adjusting the growth temperature and Ga/N flux ratio, hexagonal shaped SAG GaN NWs are realized. The quality of SAG GaN NWs is evaluated by low temperature photoluminescence (PL) measurements. Three major groups of PL peaks at 3.47, 3.45, and 3.41 eV are identified. The peak at 3.471 eV is related to the neutral donor-bound exciton emission, and the 3.41 eV broadband emission is attributed to stacking faults or structural defects. The 3.45 eV peak is identified as the emission due to exciton recombination at polar inversion domain boundaries of NWs.

  4. Nucleation and coalescence effects on the density of self-induced GaN nanowires grown by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Consonni, V.; Knelangen, M.; Trampert, A.; Geelhaar, L.; Riechert, H.

    2011-02-01

    The evolution of the density of self-induced GaN nanowires as a function of the growth time, gallium rate, and growth temperature has been investigated by scanning and transmission electron microscopy. Nucleation and coalescence effects have been disentangled and quantified by distinguishing between single nanowires and nanowire clusters. Owing to the very specific nanowire nucleation mechanism involving a shape transition from spherical-cap-shaped islands, the nanowire density does not follow the standard island nucleation theory. Furthermore, the detrimental nanowire coalescence process can be significantly reduced by raising the growth temperature.

  5. GaAsP solar cells on GaP/Si with low threading dislocation density

    SciTech Connect

    Yaung, Kevin Nay; Vaisman, Michelle; Lang, Jordan; Lee, Minjoo Larry

    2016-07-18

    GaAsP on Si tandem cells represent a promising path towards achieving high efficiency while leveraging the Si solar knowledge base and low-cost infrastructure. However, dislocation densities exceeding 10{sup 8} cm{sup −2} in GaAsP cells on Si have historically hampered the efficiency of such approaches. Here, we report the achievement of low threading dislocation density values of 4.0–4.6 × 10{sup 6} cm{sup −2} in GaAsP solar cells on GaP/Si, comparable with more established metamorphic solar cells on GaAs. Our GaAsP solar cells on GaP/Si exhibit high open-circuit voltage and quantum efficiency, allowing them to significantly surpass the power conversion efficiency of previous devices. The results in this work show a realistic path towards dual-junction GaAsP on Si cells with efficiencies exceeding 30%.

  6. Hybrid density functional theory studies of AlN and GaN under uniaxial strain.

    PubMed

    Qin, Lixia; Duan, Yifeng; Shi, Hongliang; Shi, Liwei; Tang, Gang

    2013-01-30

    The structural stability, spontaneous polarization, piezoelectric response, and electronic structure of AlN and GaN under uniaxial strain along the [0001] direction are systematically investigated using HSE06 range-separated hybrid functionals. Our results exhibit interesting behavior. (i) AlN and GaN share the same structural transition from wurtzite to a graphite-like phase at very large compressive strains, similarly to other wurtzite semiconductors. Our calculations further reveal that this well-known phase transition is driven by the transverse-acoustic soft phonon mode associated with elastic instabilities. (ii) The applied tensile strain can either drastically suppress or strongly enhance the polarization and piezoelectricity, based on the value of the strain. Furthermore, large enhancements of polarization and piezoelectricity close to the phase-transition regions at large compressive strains are predicted, similar to those previously predicted in ferroelectric fields. Our calculations indicate that such colossal enhancements are strongly correlated to phase transitions when large atomic displacements are generated by external strains. (iii) Under the same strain, AlN and GaN have significantly different electronic properties: both wurtzite and graphite-like AlN always display direct band structures, while the the bandgap of wurtzite GaN is always direct and that of graphite-like GaN always indirect. Furthermore, the bandgap of graphite-like AlN is greatly enhanced by large compressive strain, but that of wurtzite GaN is not sensitive to compressive strain. Our results are drastically different from those for equibiaxial strain (Duan et al 2012 Appl. Phys. Lett. 100 022104).

  7. Hybrid density functional theory studies of AlN and GaN under uniaxial strain

    NASA Astrophysics Data System (ADS)

    Qin, Lixia; Duan, Yifeng; Shi, Hongliang; Shi, Liwei; Tang, Gang

    2013-01-01

    The structural stability, spontaneous polarization, piezoelectric response, and electronic structure of AlN and GaN under uniaxial strain along the [0001] direction are systematically investigated using HSE06 range-separated hybrid functionals. Our results exhibit interesting behavior. (i) AlN and GaN share the same structural transition from wurtzite to a graphite-like phase at very large compressive strains, similarly to other wurtzite semiconductors. Our calculations further reveal that this well-known phase transition is driven by the transverse-acoustic soft phonon mode associated with elastic instabilities. (ii) The applied tensile strain can either drastically suppress or strongly enhance the polarization and piezoelectricity, based on the value of the strain. Furthermore, large enhancements of polarization and piezoelectricity close to the phase-transition regions at large compressive strains are predicted, similar to those previously predicted in ferroelectric fields. Our calculations indicate that such colossal enhancements are strongly correlated to phase transitions when large atomic displacements are generated by external strains. (iii) Under the same strain, AlN and GaN have significantly different electronic properties: both wurtzite and graphite-like AlN always display direct band structures, while the the bandgap of wurtzite GaN is always direct and that of graphite-like GaN always indirect. Furthermore, the bandgap of graphite-like AlN is greatly enhanced by large compressive strain, but that of wurtzite GaN is not sensitive to compressive strain. Our results are drastically different from those for equibiaxial strain (Duan et al 2012 Appl. Phys. Lett. 100 022104).

  8. An Optimal Density Functional Theory Method for GaN and ZnO

    SciTech Connect

    Yu, H.G.

    2011-08-25

    We report an optimal DFT method (bBLYP) for studying the GaN and ZnO systems. It is developed by modifying the exchange functional in the hybrid BLYP method in order to overcome the flaw of traditional DFT that often predict a rather small band gap for those semiconductors. Results show that the bBLYP method can describe not only correct band gaps of both GaN and ZnO wurtzite crystals, but also accurate properties of relevant small molecules. The application study of crystal-cut nanoparticles and nanowires reveals a new mechanism for band gap narrowing in GaN/ZnO.

  9. Microstructure of laterally overgrown GaN layers

    SciTech Connect

    Liliental-Weber, Zuzanna; Cherns, David

    2001-04-03

    Transmission electron microscopy study of plan-view and cross-section samples of epitaxial laterally overgrown (ELOG) GaN samples is described. Two types of dislocation with the same type of Burgers vector but different line direction have been observed. It is shown that threading edge dislocations bend to form dislocation segments in the c-plane as a result of shear stresses developed in the wing material along the stripe direction. It is shown that migration of these dislocations involves both glide and climb. Propagation of threading parts over the wing area is an indication of high density of point defects present in the wing areas on the ELOG samples. This finding might shed new light on the optical properties of such samples.

  10. High strain gradient plasticity associated with wedge indentation into face-centered cubic single crystals: Geometrically necessary dislocation densities

    NASA Astrophysics Data System (ADS)

    Kysar, Jeffrey W.; Gan, Yong X.; Morse, Timothy L.; Chen, Xi; Jones, Milton E.

    2007-07-01

    Experimental studies on indentation into face-centered cubic (FCC) single crystals such as copper and aluminum were performed to reveal the spatially resolved variation in crystal lattice rotation induced due to wedge indentation. The crystal lattice curvature tensors of the indented crystals were calculated from the in-plane lattice rotation results as measured by electron backscatter diffraction (EBSD). Nye's dislocation density tensors for plane strain deformation of both crystals were determined from the lattice curvature tensors. The least L2-norm solutions to the geometrically necessary dislocation densities for the case in which three effective in-plane slip systems were activated in the single crystals associated with the indentation were determined. Results show the formation of lattice rotation discontinuities along with a very high density of geometrically necessary dislocations.

  11. Frequency analysis of GaN MESFETs using full-band cellular Monte Carlo

    NASA Astrophysics Data System (ADS)

    Yamakawa, S.; Goodnick, S. M.; Branlard, J.; Saraniti, M.

    2005-05-01

    A full-band electron transport calculation in wurtzite phase GaN based on a detailed model of the electron-phonon interactions using a Cellular Monte Carlo (CMC) approach is applied to the frequency analysis of MESFETs. Realistic polar-optical phonon, impurity, piezoelectric and dislocation scattering is included in the full-band CMC simulator, which shows good agreement with measured velocity-field data. The effect of the dislocation scattering on the MESFET RF characteristics is examined as well, indicating that the computed cut-off frequency is affected by the crystal dislocation density and bias conditions.

  12. Growth and Characterization of N-Polar GaN Films on Si(111) by Plasma Assisted Molecular Beam Epitaxy

    NASA Astrophysics Data System (ADS)

    Dasgupta, Sansaptak; Nidhi; Wu, Feng; Speck, James S.; Mishra, Umesh K.

    2012-11-01

    Smooth N-polar GaN films were epitaxially grown by plasma assisted molecular beam epitaxy (PAMBE) on on-axis p-Si(111). The structural quality of the as-grown GaN films was further improved by insertion of AlGaN/GaN superlattice structures, resulting in reduced threading dislocation density and also efficient stress management in the GaN film to mitigate crack formation. The structural quality of these films was comparable to N-polar GaN grown on C-SiC by MBE. Convergent beam electron diffraction (CBED) imaging and KOH etch studies were performed to confirm the N-polarity of the sample. Room temperature photoluminescence measurements revealed strong GaN band-edge emission.

  13. Prediction of Dislocation Cores in Aluminum from Density Functional Theory (Postprint)

    DTIC Science & Technology

    2009-02-01

    demonstrates the need for quantum mechanical treatment of dislocation cores. 15. SUBJECT TERMS plastic deformation, dislocation, energy , fault...field that decreases as the inverse of the distance from the core. In fcc metals dislocations can reduce elastic energy by separating into Shockley...partial dislocations connected by a stacking fault [1]. For materi- als with large stacking fault energies (i.e., aluminum) this separation can be quite

  14. Electron mobility limited by scattering from threading dislocation lines within gallium nitride

    NASA Astrophysics Data System (ADS)

    Mohammad Alavi, Seyed; Bagani, Erfan

    2016-03-01

    Theoretical as well as experimental studies in the literature suggest that defect sites associated with the threading dislocation lines within n-type gallium nitride (GaN) act to trap free electrons from the bulk of this semiconductor material. As a result, the core of the threading dislocation lines become negatively charged. The charge accumulated along the core of a threading dislocation line should be screened by a charge of opposite polarity and equal in absolute value per unit length along the dislocation line. In the present work, we model this screened charge buildup along the threading dislocation lines by two concentric space-charge cylinders. Quantum mechanical theory of scattering in cylindrical coordinates is then employed in order to numerically compute the electron mobility limited by scattering from the charged threading dislocation lines. The dependence of the computed electron mobility on the dislocation line density and on the amount of charge accumulated per unit length along the core of the dislocation lines is also investigated in this work. Our computed electron mobility results are compared with results from existing calculations of the GaN dislocation scattering limited electron mobility in the literature.

  15. Change in equilibrium position of misfit dislocations at the GaN/sapphire interface by Si-ion implantation into sapphire—I. Microstructural characterization

    SciTech Connect

    Lee, Sung Bo Han, Heung Nam Lee, Dong Nyung; Ju, Jin-Woo; Kim, Young-Min; Yoo, Seung Jo; Kim, Jin-Gyu

    2015-07-15

    Much research has been done to reduce dislocation densities for the growth of GaN on sapphire, but has paid little attention to the elastic behavior at the GaN/sapphire interface. In this study, we have examined effects of the addition of Si to a sapphire substrate on its elastic property and on the growth of GaN deposit. Si atoms are added to a c-plane sapphire substrate by ion implantation. The ion implantation results in scratches on the surface, and concomitantly, inhomogeneous distribution of Si. The scratch regions contain a higher concentration of Si than other regions of the sapphire substrate surface, high-temperature GaN being poorly grown there. However, high-temperature GaN is normally grown in the other regions. The GaN overlayer in the normally-grown regions is observed to have a lower TD density than the deposit on the bare sapphire substrate (with no Si accommodated). As compared with the film on an untreated, bare sapphire, the cathodoluminescence defect density decreases by 60 % for the GaN layer normally deposited on the Si-ion implanted sapphire. As confirmed by a strain mapping technique by transmission electron microscopy (geometric phase analysis), the addition of Si in the normally deposited regions forms a surface layer in the sapphire elastically more compliant than the GaN overlayer. The results suggest that the layer can largely absorb the misfit strain at the interface, which produces the overlayer with a lower defect density. Our results highlight a direct correlation between threading-dislocation density in GaN deposits and the elastic behavior at the GaN/sapphire interface, opening up a new pathway to reduce threading-dislocation density in GaN deposits.

  16. Nanoheteroepitaxy of GaN on AlN/Si(111) nanorods fabricated by nanosphere lithography

    NASA Astrophysics Data System (ADS)

    Lee, Donghyun; Shin, In-Su; Jin, Lu; Kim, Donghyun; Park, Yongjo; Yoon, Euijoon

    2016-06-01

    Nanoheteroepitaxy (NHE) of GaN on an AlN/Si(111) nanorod structure was investigated by metal-organic chemical vapor deposition. Silica nanosphere lithography was employed to fabricate a periodic hexagonal nanorod array with a narrow gap of 30 nm between the nanorods. We were successful in obtaining a fully coalesced GaN film on the AlN/Si(111) nanorod structure. Transmission electron microscopy revealed that threading dislocation (TD) bending and termination by stacking faults occurred near the interface between GaN and the AlN/Si(111) nanorods, resulting in the reduction of TD density for the NHE GaN layer. The full width at half-maximum of the X-ray rocking curve for (102) plane of the NHE GaN was found to decrease down to 728 arcsec from 1005 arcsec for the GaN layer on a planar AlN/Si(111) substrate, indicating that the crystalline quality of the NHE GaN was improved. Also, micro-Raman measurement showed that tensile stress in the NHE GaN layer was reduced significantly as much as 70% by introducing air voids between the nanorods.

  17. Steel Alloy Hot Roll Simulations and Through-Thickness Variation Using Dislocation Density-Based Modeling

    NASA Astrophysics Data System (ADS)

    Jansen Van Rensburg, G. J.; Kok, S.; Wilke, D. N.

    2017-07-01

    Different roll pass reduction schedules have different effects on the through-thickness properties of hot-rolled metal slabs. In order to assess or improve a reduction schedule using the finite element method, a material model is required that captures the relevant deformation mechanisms and physics. The model should also report relevant field quantities to assess variations in material state through the thickness of a simulated rolled metal slab. In this paper, a dislocation density-based material model with recrystallization is presented and calibrated on the material response of a high-strength low-alloy steel. The model has the ability to replicate and predict material response to a fair degree thanks to the physically motivated mechanisms it is built on. An example study is also presented to illustrate the possible effect different reduction schedules could have on the through-thickness material state and the ability to assess these effects based on finite element simulations.

  18. Steel Alloy Hot Roll Simulations and Through-Thickness Variation Using Dislocation Density-Based Modeling

    NASA Astrophysics Data System (ADS)

    Jansen Van Rensburg, G. J.; Kok, S.; Wilke, D. N.

    2017-10-01

    Different roll pass reduction schedules have different effects on the through-thickness properties of hot-rolled metal slabs. In order to assess or improve a reduction schedule using the finite element method, a material model is required that captures the relevant deformation mechanisms and physics. The model should also report relevant field quantities to assess variations in material state through the thickness of a simulated rolled metal slab. In this paper, a dislocation density-based material model with recrystallization is presented and calibrated on the material response of a high-strength low-alloy steel. The model has the ability to replicate and predict material response to a fair degree thanks to the physically motivated mechanisms it is built on. An example study is also presented to illustrate the possible effect different reduction schedules could have on the through-thickness material state and the ability to assess these effects based on finite element simulations.

  19. Polarity control of GaN grown on pulsed-laser-deposited AlN/GaN template by metalorganic vapor phase epitaxy

    NASA Astrophysics Data System (ADS)

    Yoo, Jinyeop; Shojiki, Kanako; Tanikawa, Tomoyuki; Kuboya, Shigeyuki; Hanada, Takashi; Katayama, Ryuji; Matsuoka, Takashi

    2016-05-01

    We report on the polarity control of GaN regrown on pulsed-laser-deposition-grown N-polar AlN on a metalorganic-vapor-phase-epitaxy-grown Ga-polar GaN template. The polarity of the regrown GaN, which was confirmed using aqueous KOH solutions, can be inverted from that of AlN by inserting a low-temperature GaN (LT-GaN) buffer layer. We hypothetically ascribe the Ga-polarity selection of GaN on the LT-GaN buffer layer to the mixed polarity of LT-GaN grains and higher growth rate of the Ga-polar grain, which covers up the N-polar grain during the initial stage of the high-temperature growth. The X-ray rocking curve analysis revealed that the edge-dislocation density in the N-polar regrown GaN is 5 to 8 times smaller than that in the Ga-polar regrown GaN. N-polar GaN grows directly on N-polar AlN at higher temperatures. Therefore, nucleus islands grow larger than those of LT-GaN and the area fraction of coalescence boundaries between islands, where edge dislocations emerge, becomes smaller.

  20. X-ray and neutron diffraction measurements of dislocation density and subgrain size in a friction stir welded aluminum alloy

    SciTech Connect

    Claussen, Bjorn; Woo, Wanchuck; Zhili, Feng; Edward, Kenik; Ungar, Tamas

    2009-01-01

    The dislocation density and subgrain size were determined in the base material and friction-stir welds of 6061-T6 aluminum alloy. High-resolution X-ray diffraction measurement was performed in the base material. The result of the line profile analysis of the X-ray diffraction peak shows that the dislocation density is about 4.5 x 10{sup 14} m{sup 02} and the subgrain size is about 200 nm. Meanwhile, neutron diffraction measurements have been performed to observe the diffraction peaks during friction-stir welding (FSW). The deep penetration capability of the neutron enables us to measure the peaks from the midplane of the Al plate underneath the tool shoulder of the friction-stir welds. The peak broadening analysis result using the Williamson-Hall method shows the dislocation density of about 3.2 x 10{sup 15} m{sup -2} and subgrain size of about 160 nm. The significant increase of the dislocation density is likely due to the severe plastic deformation during FSW. This study provides an insight into understanding the transient behavior of the microstructure under severe thermomechanical deformation.

  1. A quantitative study of the effect of surface texture on plasticity induced surface roughness and dislocation density of crystalline materials

    NASA Astrophysics Data System (ADS)

    Zamiri, Amir R.; Pourboghrat, Farhang; Bieler, Thomas R.

    2008-10-01

    Microscale simulations are used to study the effects of the surface texture and plastic deformation on surface roughness and dislocation density, which are important parameters controlling some surface physical properties such as electron work function (EWF) and phonon emission of crystalline materials. The results of the simulations on superconducting niobium show that the intensity and the components of the surface texture have significant effects on the plasticity induced surface roughness and dislocation density. A weak surface texture develops a rough surface after plastic deformation, which is due to the different plastic "shear rates and directions" behavior in the grains with different orientations. Some grains with specific orientation experience more plastic deformation, and therefore develop an intragrain surface roughness due to the development of microtexture and inhomogeneous plastic deformation inside the grain. Due to an inhomogeneous plastic deformation, the dislocation density not only is different in the grains with different orientations but also is inhomogeneous within a grain. Therefore, it may be possible to design surface texture to obtain optimal EWF and minimal electron emission and control surface roughness and dislocation density in polycrystalline materials.

  2. Evaluation of dislocation densities in HgCdTe films by high-resolution x-ray diffraction

    NASA Astrophysics Data System (ADS)

    Wang, Qingxue; Yang, Jianrong; Wei, Yanfeng; Fang, Weizheng; He, Li

    2005-01-01

    The dislocation densities in HgCdTe films grown on CdZnTe by Liquid Phase Epitaxy (LPE) are calculated based on their effects on the x-ray rocking curves. The dislocation densities derived from three kinds of methods, i.e. FWHM of X-ray double axis diffraction, Williamson-Hall plot and Pseudo-Voigt function, are approximately the same. It is found that the thickness of HgCdTe epilayers about 10 um is large enough so that effect of crystallize size on the rocking curves width can be ignored. Because the intrinsic FWHM of HgCdTe and the instrumental function of high resolution X-ray diffraction are neglected in Williamson-Hall plot and Pseudo-Voigt function, the dislocation densities obtained by these methods are a little larger than those derived from the first kind of method. Among three kinds of methods, Pseudo-Voigt function method is the easiest one to fit the rocking curves and calculate the dislocation densities.

  3. The structure of dislocations in (In,Al,Ga)N wurtzite films grown epitaxially on (0001) or (112xAF2) GaN or AlN substrates

    NASA Astrophysics Data System (ADS)

    Jones, K. A.; Batyrev, I. G.

    2012-12-01

    When dislocations have to be nucleated in the film to accommodate the lattice mismatch with the substrate, the shear stress acting in the glide plane, projection of the edge component of the Burgers vector lying in the growth plane, shear stress required for the dislocation to glide, and ability to decompose into partial dislocation pairs with an associated stacking fault are considered. This is done for growth on the (0001) or (112¯2) substrates by calculating the angle the slip plane, h, makes with the growth plane, length of the Burgers vector, b, angle between b and the dislocation line, l, projection of b onto the normal to l lying in the growth plane, and planar density of h. The planar density is used as a measure of the shear stress required to move the dislocation, and it is computed by determining the interplanar spacing, d, and accounting for the atoms that lie in parallel planes, which are made possible by the fact that the wurtzite unit cell contains four atoms per lattice point. Only dislocations with pyramidal glide planes are considered for growth on the (0001) substrate because the plane strain generated by the lattice mismatch does not generate any shear stress in the basal or prismatic planes. Only one member of the family of planes is considerate for this growth plane because of its high symmetry. For growth on the (112¯2) plane both slip in the basal plane and the prismatic plane normal to the Burgers vector in it are examined.

  4. Growth of Low Defect Density Gallium Nitride (GaN) Films on Novel Tantalum Carbide (TaC) Substrates for Improved Device Performance

    DTIC Science & Technology

    2009-05-01

    on SiC substrates by pulse laser deposition (PLD) (10) and on magnesium oxide ( MgO ) substrates by electron beam evaporation (11), using TaC films...matched to GaN than currently used substrates. We created the TaC substrate, using pulse laser deposition (PLD) of TaC onto (0001) SiC substrates at...films grown on SiC or sapphire, and they contained more than an order of magnitude fewer dislocations compared to a typical value of 4 x 109 cm–2

  5. Experimental study and modeling of the influence of screw dislocations on the performance of Au/n-GaN Schottky diodes

    NASA Astrophysics Data System (ADS)

    Huang, Y.; Chen, X. D.; Fung, S.; Beling, C. D.; Ling, C. C.

    2003-11-01

    Current-voltage (I-V) characteristics of macroscopic Schottky diodes fabricated on different GaN templates grown by metalogranic chemical vapor deposition on sapphire substrates were investigated. The number of dislocations under the Au Schottky contact was determined by atomic force microscopy combined with hot H3PO4 etching and the screw dislocations in the GaN films were found to have a strong influence on the reverse leakage current of the Au/n-GaN Schottky diodes. The leakage current is increased when high-density screw dislocations exist under the Au Schottky contact. A model based upon the presence of dislocations at the Au/GaN interface has been used to explain this behavior. It has been proposed that these dislocations result in the lowering of the barrier height in the localized regions, and thus significantly affect the reverse I-V characteristics of the Schottky diodes.

  6. Characterization of 100 mm Diameter 4H-Silicon Carbide CrystalsWith Extremely Low Basal Plane Dislocation Density

    SciTech Connect

    M Dudley; N Zhang; Y Zhang; B Raghothamachar; S Byrappa; G Choi; E Drachev; M Loboda

    2011-12-31

    Synchrotron White Beam X-ray Topography (SWBXT) studies are presented of basal plane dislocation (BPD) configurations and behavior in a new generation of 100mm diameter, 4H-SiC wafers with extremely low BPD densities (3-4 x 10{sup 2} cm{sup -2}). The conversion of non-screw oriented, glissile BPDs into sessile threading edge dislocations (TEDs) is observed to provide pinning points for the operation of single ended Frank-Read sources. In some regions, once converted TEDs are observed to re-convert back into BPDs in a repetitive process which provides multiple BPD pinning points.

  7. Characterization of 100 mm Diameter 4H-Silicon Carbide CrystalsWith Extremely Low Basal Plane Dislocation Density

    SciTech Connect

    S Bakalova

    2011-12-31

    Synchrotron White Beam X-ray Topography (SWBXT) studies are presented of basal plane dislocation (BPD) configurations and behavior in a new generation of 100mm diameter, 4H-SiC wafers with extremely low BPD densities (3-4 x 10{sup 2} cm{sup -2}). The conversion of non-screw oriented, glissile BPDs into sessile threading edge dislocations (TEDs) is observed to provide pinning points for the operation of single ended Frank-Read sources. In some regions, once converted TEDs are observed to re-convert back into BPDs in a repetitive process which provides multiple BPD pinning points.

  8. Characterization of 100 mm diameter 4H-silicon carbide crystals with extremely low basal plane dislocation density

    SciTech Connect

    Dudley, M.; Zhang, N; Zhang, Y; Raghothamachar, B; Byrappa, S; Choi, G; Sanchez, E; Hansen, D; Drachev, R; Loboda, M

    2010-01-01

    Synchrotron White Beam X-ray Topography (SWBXT) studies are presented of basal plane dislocation (BPD) configurations and behavior in a new generation of 100mm diameter, 4H-SiC wafers with extremely low BPD densities (3-4 x 10{sup 2} cm{sup -2}). The conversion of non-screw oriented, glissile BPDs into sessile threading edge dislocations (TEDs) is observed to provide pinning points for the operation of single ended Frank-Read sources. In some regions, once converted TEDs are observed to re-convert back into BPDs in a repetitive process which provides multiple BPD pinning points.

  9. Assessment of lattice strain, rotation and dislocation content using electron back-scatter diffraction

    NASA Astrophysics Data System (ADS)

    Wilkinson, Angus J.

    2011-11-01

    Cross-correlation based analysis methods have been developed for electron back scatter diffraction (EBSD) patterns that improve the angular sensitivity to ~10-4 rads. This enables EBSD to be used to study the much smaller misorientations and even local elastic strain fields that are typical in semiconducting materials. Mapping of the lattice rotations and elastic strain variations provides sufficient detail for quantitative analysis of the threading dislocation density through the Nye tensor. The analysis will be briefly described and applications given to GaN and Si/SiGe based systems. Measurements of tilt, twist and elastic strain variations in GaN layers on basal plane sapphire will be reported and compared to results for some epitaxial lateral over grown (ELOG) GaN samples. The effects of misfit interfacial dislocations on the spatial distribution of the full strain and rotation tensors in a partially relaxed SiGe layer will also be shown.

  10. Reduced Dislocation Density in GaxIn1-xP Compositionally Graded Buffer Layers through Engineered Glide Plane Switch

    DOE PAGES

    Schulte, Kevin L.; France, Ryan M.; McMahon, William E.; ...

    2016-11-17

    In this work we develop control over dislocation glide dynamics in GaxIn1-xP compositionally graded buffer layers (CGBs) through control of CuPt ordering on the group-III sublattice. The ordered structure is metastable in the bulk, so any glissile dislocation that disrupts the ordered pattern will release stored energy, and experience an increased glide force. Here we show how this connection between atomic ordering and dislocation glide force can be exploited to control the threading dislocation density (TDD) in GaxIn1-xP CGBs. When ordered GaxIn1-xP is graded from the GaAs lattice constant to InP, the order parameter ..eta.. decreases as x decreases, andmore » dislocation glide switches from one set of glide planes to the other. This glide plane switch (GPS) is accompanied by the nucleation of dislocations on the new glide plane, which typically leads to increased TDD. We develop control of the GPS position within a GaxIn1-xP CGB through manipulation of deposition temperature, surfactant concentration, and strain-grading rate. We demonstrate a two-stage GaxIn1-xP CGB from GaAs to InP with sufficiently low TDD for high performance devices, such as the 4-junction inverted metamorphic multi-junction solar cell, achieved through careful control the GPS position. Experimental results are analyzed within the context of a model that considers the force balance on dislocations on the two competing glide planes as a function of the degree of ordering.« less

  11. Reduced dislocation density in GaxIn1-xP compositionally graded buffer layers through engineered glide plane switch

    NASA Astrophysics Data System (ADS)

    Schulte, K. L.; France, R. M.; McMahon, W. E.; Norman, A. G.; Guthrey, H. L.; Geisz, J. F.

    2017-04-01

    In this work we develop control over dislocation glide dynamics in GaxIn1-xP compositionally graded buffer layers (CGBs) through control of CuPt ordering on the group-III sublattice. The ordered structure is metastable in the bulk, so any glissile dislocation that disrupts the ordered pattern will release stored energy, and experience an increased glide force. Here we show how this connection between atomic ordering and dislocation glide force can be exploited to control the threading dislocation density (TDD) in GaxIn1-xP CGBs. When ordered GaxIn1-xP is graded from the GaAs lattice constant to InP, the order parameter η decreases as x decreases, and dislocation glide switches from one set of glide planes to the other. This glide plane switch (GPS) is accompanied by the nucleation of dislocations on the new glide plane, which typically leads to increased TDD. We develop control of the GPS position within a GaxIn1-xP CGB through manipulation of deposition temperature, surfactant concentration, and strain-grading rate. We demonstrate a two-stage GaxIn1-xP CGB from GaAs to InP with sufficiently low TDD for high performance devices, such as the 4-junction inverted metamorphic multi-junction solar cell, achieved through careful control the GPS position. Experimental results are analyzed within the context of a model that considers the force balance on dislocations on the two competing glide planes as a function of the degree of ordering.

  12. Constitutive model based on dislocation density and ductile fracture of Monel 400 thin sheet under tension

    NASA Astrophysics Data System (ADS)

    Wang, Chuanjie; Xue, Shaoxi; Chen, Gang; Zhang, Peng

    2017-03-01

    In micro-scaled plastic deformation, material strength and ductile fracture behaviors of thin sheet in tension are quite different from those in macro-scale. In this study, uniaxial tensile tests of Monel 400 thin sheets with different microstructures were carried out to investigate the plastic deformation size effect in micro-scale. The experimental results indicate that the flow stress and fracture strain departure from the traditional empirical formula when there are only fewer grains across the thickness. And the number of dimples on the fracture surface is getting smaller with the decreasing ratio of specimen thickness to grain size. Then, a constitutive model based on dislocation density considering the free surface effect in micro-scale is proposed to reveal the mechanism of the flow stress size effect. In addition, a model is proposed considering the surface roughening inducing the thickness nonuniform and the decrease of micro-voids resulting from the reduction of grain boundary density with the decreasing ratio of specimen thickness to grain size. The interactive effects of the surface roughening and the decrease of micro-voids result in the earlier fracture in micro tension of the specimen with fewer grains across the thickness.

  13. Constitutive model based on dislocation density and ductile fracture of monel 400 thin sheet under tension

    NASA Astrophysics Data System (ADS)

    Wang, Chuanjie; Xue, Shaoxi; Chen, Gang; Zhang, Peng

    2017-02-01

    In micro-scaled plastic deformation, material strength and ductile fracture behaviors of thin sheet in tension are quite different from those in macro-scale. In this study, uniaxial tensile tests of Monel 400 thin sheets with different microstructures were carried out to investigate the plastic deformation size effect in micro-scale. The experimental results indicate that the flow stress and fracture strain departure from the traditional empirical formula when there are only fewer grains across the thickness. And the number of dimples on the fracture surface is getting smaller with the decreasing ratio of specimen thickness to grain size. Then, a constitutive model based on dislocation density considering the free surface effect in micro-scale is proposed to reveal the mechanism of the flow stress size effect. In addition, a model is proposed considering the surface roughening inducing the thickness nonuniform and the decrease of micro-voids resulting from the reduction of grain boundary density with the decreasing ratio of specimen thickness to grain size. The interactive effects of the surface roughening and the decrease of micro-voids result in the earlier fracture in micro tension of the specimen with fewer grains across the thickness.

  14. Dislocation densities and stored energy after cold rolling of Al-Mg alloys: Investigations by resistivity and differential scanning calorimetry

    SciTech Connect

    Verdier, M.; Flandin, L.; Brechet, Y.; Groma, I.; Lendvai, J.; Guyot, P.

    1997-08-15

    The authors have shown that the heat released during heating samples of Al-2.5%Mg cold rolled at different strains stems from two contributions: one corresponds to the annihilation of defects during recrystallization and the other to desegregation of solute atoms from the core of dislocations. A low temperature endotherm peak is also observed and can be attributed to dissolution of Mg clusters formed in dislocation walls. The authors have shown that the hardness of the material can be described by a single internal variable which is the density of dislocations. In contrast to this, the energy stored during cold rolling can not be described by a single variable theory. As a consequence, the yield stress alone can not be sufficient to depict stored energy and thus recrystallization kinetics.

  15. Gamma Prime Precipitation, Dislocation Densities, and TiN in Creep-Exposed Inconel 617 Alloy

    NASA Astrophysics Data System (ADS)

    Krishna, Ram; Atkinson, Helen V.; Hainsworth, Sarah V.; Gill, Simon P.

    2016-01-01

    Inconel 617 is a solid-solution-strengthened Ni-based superalloy with a small amount of gamma prime (γ') present. Here, samples are examined in the as-received condition and after creep exposure at 923 K (650 °C) for 574 hours and 45,000 hours and at 973 K (700 °C) for 4000 hours. The stress levels are intermediate (estimated, respectively, as of the order of 350, 275, and 200 MPa) and at levels of interest for the future operation of power plant. The hardness of the specimens has been measured in the gage length and the head. TEM thin foils have been obtained to quantify dislocation densities (3.5 × 1013 for the as-received, 5.0 × 1014, 5.9 × 1014, and 3.5 × 1014 lines/m2 for the creep-exposed specimens, respectively). There are no previous data in the literature for dislocation densities in this alloy after creep exposure. There is some evidence from the dislocation densities that for the creep-exposed samples, the higher hardness in the gage length in comparison with the creep test specimen head is due to work hardening rather than any other effect. Carbon replicas have been used to extract gamma prime precipitates. The morphology of γ' precipitates in the `as-received' condition was spheroidal with an average diameter of 18 nm. The morphology of these particles does not change with creep exposure but the size increases to 30 nm after 574 hours at 923 K (650 °C) but with little coarsening in 45,000 hours. At 973 K (700 °C) 4000 hours, the average gamma prime size is 32 nm. In the TEM images of the replicas, the particles overlap, and therefore, a methodology has been developed to estimate the volume fraction of gamma prime in the alloy given the carbon replica film thickness. The results are 5.8 vol pct in the as-received and then 2.9, 3.2, and 3.4 vol pct, respectively, for the creep-exposed specimens. The results are compared with predictions from thermodynamic analysis given the alloy compositions. Thermodynamic prediction shows that nitrogen

  16. Comparative study on hydrostatic strain, stress and dislocation density of Al{sub 0.3}Ga{sub 0.7}N/GaN heterostructure before and after a-Si{sub 3}N{sub 4} passivation

    SciTech Connect

    Dinara, Syed Mukulika Jana, Sanjay Kr.; Mukhopadhyay, Partha; Ghosh, Saptarsi; Bhattacharya, Sekhar; Biswas, Dhrubes

    2015-08-28

    The hydrostatic strain, stress and dislocation densities were comparatively analyzed before and after passivation of amorphous silicon nitride (a-Si{sub 3}N{sub 4}) layer on Al{sub 0.3}Ga{sub 0.7}N/GaN heterostructure by nondestructive high resolution x-ray diffraction (HRXRD) technique. The crystalline quality, in-plane and out-of plane strain were evaluated from triple-axis (TA) (ω-2θ) diffraction profile across the (002) reflection plane and double-axis (DA) (ω-2θ) glancing incidence (GI) diffraction profile across (105) reflection plane. The hydrostatic strain and stress of Al{sub 0.3}Ga{sub 0.7}N barrier layer were increased significantly after passivation and both are tensile in nature. The dislocation density of GaN was also analyzed and no significant change was observed after passivation of the heterostructure. The crystalline quality was not degraded after passivation on the heterostructure confirmed by the full-width-half-maximum (FWHM) analysis.

  17. Structural defects in bulk GaN

    NASA Astrophysics Data System (ADS)

    Liliental-Weber, Z.; dos Reis, R.; Mancuso, M.; Song, C. Y.; Grzegory, I.; Porowski, S.; Bockowski, M.

    2014-10-01

    Transmission Electron Microscopy (TEM) studies of undoped and Mg doped GaN layers grown on the HVPE substrates by High Nitrogen Pressure Solution (HNPS) with the multi-feed-seed (MFS) configuration are shown. The propagation of dislocations from the HVPE substrate to the layer is observed. Due to the interaction between these dislocations in the thick layers much lower density of these defects is observed in the upper part of the HNPS layers. Amorphous Ga precipitates with attached voids pointing toward the growth direction are observed in the undoped layer. This is similar to the presence of Ga precipitates in high-pressure platelets, however the shape of these precipitates is different. The Mg doped layers do not show Ga precipitates, but MgO rectangular precipitates are formed, decorating the dislocations. Results of TEM studies of HVPE layers grown on Ammonothermal substrates are also presented. These layers have superior crystal quality in comparison to the HNPS layers, as far as density of dislocation is concern. Occasionally some small inclusions can be found, but their chemical composition was not yet determined. It is expected that growth of the HNPS layers on these substrate will lead to large layer thickness obtained in a short time and with high crystal perfection needed in devices.

  18. Micro-strain, dislocation density and surface chemical state analysis of multication thin films

    NASA Astrophysics Data System (ADS)

    Jayaram, P.; Pradyumnan, P. P.; Karazhanov, S. Zh.

    2016-11-01

    Multication complex metal oxide thin films are rapidly expanding the class of materials with many technologically important applications. Herein this work, the surface of the pulsed laser deposited thin films of Zn2SnO4 and multinary compounds obtained by substitution/co-substitution of Sn4+ with In3+ and Ga3+ are studied by X-ray photoelectron emission spectroscopy (X-PES) method. Peaks corresponding to the elements of Zn, Sn, Ga, In and O on the film surface has been identified and contribution of the elements has been studied by the computer aided surface analysis (CASA) software. Binding energies, full-width at half maximum (FWHM), spin-orbit splitting energies, asymmetric peak-shape fitting parameters and quantification of elements in the films are discussed. Studies of structural properties of the films by x-ray diffraction (XRD) technique showed inverse spinel type lattice with preferential orientation. Micro-strain, dislocation density and crystallite sizes in the film surface have been estimated.

  19. Selective heteroepitaxy on deeply grooved substrate: A route to low cost semipolar GaN platforms of bulk quality

    SciTech Connect

    Tendille, Florian Vennéguès, Philippe; De Mierry, Philippe; Martin, Denis; Grandjean, Nicolas

    2016-08-22

    Semipolar GaN crystal stripes larger than 100 μm with dislocation densities below 5 × 10{sup 6} cm{sup −2} are achieved using a low cost fabrication process. An original sapphire patterning procedure is proposed, enabling selective growth of semipolar oriented GaN stripes while confining the defects to specific areas. Radiative and non-radiative crystalline defects are investigated by cathodoluminescence and can be correlated to the development of crystal microstructure during the growth process. A dislocation reduction mechanism, supported by transmission electron microscopy, is proposed. This method represents a step forward toward low-cost quasi-bulk semipolar GaN epitaxial platforms with an excellent structural quality which will allow for even more efficient III-nitride based devices.

  20. Growth of low-density GaN quantum dots on Al xGa 1-xN

    NASA Astrophysics Data System (ADS)

    Pakuła, K.; Bożek, R.; Surowiecka, K.; Stępniewski, R.; Wysmołek, A.; Baranowski, J. M.

    2006-04-01

    The growth of low-density GaN quantum dots on Al xGa 1-xN by metalorganic vapor phase epitaxy (MOVPE) using in situ etching of the Al xGa 1-xN surface in the presence of SiH 4, is reported. Subsequent growth stages have been verified by atomic force microscopy and micro-photoluminescence ( μPL). The low temperature μPL shows sharp emission lines originating from single quantum dots, without any artificial masks or mesa structures. This proves that the proposed growth technique offers unique possibility for detailed optical studies of energetic structure and recombination processes of single GaN/Al xGa 1-xN quantum dots.

  1. Relationship between dislocation and the visible luminescence band observed in ZnO epitaxial layers grown on c-plane p-GaN templates by chemical vapor deposition technique

    NASA Astrophysics Data System (ADS)

    Saroj, Rajendra K.; Dhar, S.

    2016-08-01

    ZnO epitaxial layers are grown on c-plane GaN (p-type)/sapphire substrates using a chemical vapor deposition technique. Structural and luminescence properties of these layers have been studied systematically as a function of various growth parameters. It has been found that high quality ZnO epitaxial layers can indeed be grown on GaN films at certain optimum conditions. It has also been observed that the growth temperature and growth time have distinctly different influences on the screw and edge dislocation densities. While the growth temperature affects the density of edge dislocations more strongly than that of screw dislocations, an increase of growth duration leads to a rapid drop in the density of screw dislocation, whereas the density of edge dislocation hardly changes. Densities of both edge and screw dislocations are found to be minimum at a growth temperature of 500 °C. Interestingly, the defect related visible luminescence intensity also shows a minimum at the same temperature. Our study indeed suggests that the luminescence feature is related to threading edge dislocation. A continuum percolation model, where the defects responsible for visible luminescence are considered to be formed under the influence of the strain field surrounding the threading edge dislocations, is proposed. The theory explains the observed variation of the visible luminescence intensity as a function of the concentration of the dislocations.

  2. MOCVD growth of GaN on Si through novel substrate modification techniques

    NASA Astrophysics Data System (ADS)

    Gagnon, Jarod C.

    GaN is a semiconductor material with great potential for use in high power electronics and optoelectronics due to the high electron mobility, high breakdown voltage, high thermal stability, and large direct bandgap of GaN. Si is a desirable substrate material for GaN heteroepitaxy due to the low cost of production, large wafer sizes available, and current widespread use in the electronics industry. The growth of GaN/Si devices suffers from the lattice and CTE mismatches between GaN and Si and therefore multiple methods of strain reduction have been employed to counter these effects. In this work we presented two novel methods of substrate modification to promote the growth of device quality GaN on Si. Initial work focused on the implantation of AlN/Si(111) substrates with N+ ions below the AlN/Si(111) interface. A reduction in the initial compressive stress in GaN films as well as the degree of tensile stress generation during growth was observed on implanted samples. Optical microscopy of the GaN surfaces showed reduced channeling crack density on implanted substrates. Transmission electron microscopy (TEM) studies showed a disordered layer in the Si substrate at the implantation depth which consisted of a mixture of polycrystalline and amorphous Si. Evidence was provided to suggest that the disordered layer at the implantation depth was acting as a compliant layer which decoupled the GaN film from the bulk Si substrate and partially accommodated the tensile stress formed during growth and cooling. A reduction in threading dislocation (TD) density on ion implanted substrates was also observed. Additional studies showed that by increasing the lateral size of AlN islands, the tensile growth stress and TD density in GaN films on ion implanted substrates could be further reduced. XRD studies showed an expansion of the AlN lattice on implanted substrates with larger lateral island sizes. The final tensile growth stress of films on implanted substrates was further

  3. Zn-dopant dependent defect evolution in GaN nanowires

    NASA Astrophysics Data System (ADS)

    Yang, Bing; Liu, Baodan; Wang, Yujia; Zhuang, Hao; Liu, Qingyun; Yuan, Fang; Jiang, Xin

    2015-10-01

    Zn doped GaN nanowires with different doping levels (0, <1 at%, and 3-5 at%) have been synthesized through a chemical vapor deposition (CVD) process. The effect of Zn doping on the defect evolution, including stacking fault, dislocation, twin boundary and phase boundary, has been systematically investigated by transmission electron microscopy and first-principles calculations. Undoped GaN nanowires show a hexagonal wurtzite (WZ) structure with good crystallinity. Several kinds of twin boundaries, including (101&cmb.macr;3), (101&cmb.macr;1) and (202&cmb.macr;1), as well as Type I stacking faults (...ABABC&cmb.b.line;BCB...), are observed in the nanowires. The increasing Zn doping level (<1 at%) induces the formation of screw dislocations featuring a predominant screw component along the radial direction of the GaN nanowires. At high Zn doping level (3-5 at%), meta-stable cubic zinc blende (ZB) domains are generated in the WZ GaN nanowires. The WZ/ZB phase boundary (...ABABAC&cmb.b.line;BA...) can be identified as Type II stacking faults. The density of stacking faults (both Type I and Type II) increases with increasing the Zn doping levels, which in turn leads to a rough-surface morphology in the GaN nanowires. First-principles calculations reveal that Zn doping will reduce the formation energy of both Type I and Type II stacking faults, favoring their nucleation in GaN nanowires. An understanding of the effect of Zn doping on the defect evolution provides an important method to control the microstructure and the electrical properties of p-type GaN nanowires.Zn doped GaN nanowires with different doping levels (0, <1 at%, and 3-5 at%) have been synthesized through a chemical vapor deposition (CVD) process. The effect of Zn doping on the defect evolution, including stacking fault, dislocation, twin boundary and phase boundary, has been systematically investigated by transmission electron microscopy and first-principles calculations. Undoped GaN nanowires show a

  4. Microstructure of heteroepitaxial GaN grown on mesa-patterned 4H-SiC substrates

    NASA Astrophysics Data System (ADS)

    Bassim, N. D.; Twigg, M. E.; Eddy, C. R.; Henry, R. L.; Holm, R. T.; Culbertson, J. C.; Stahlbush, R. E.; Neudeck, P. G.; Trunek, A. J.; Powell, J. A.

    2004-06-01

    Cross-sectional transmission electron microscopy and atomic force microscopy have been used to study the microstructure of a thin heteroeptiaxial GaN film grown on (0001) 4H-SiC mesa surfaces with and without atomic scale steps. Analysis of a mesa that was completely free of atomic-scale surface steps prior to III -N film deposition showed that these GaN layers had a wide variation in island height (1-3μm ) and included the presence of pit-like defects on the film surface. This sample had a low dislocation density (5×108/cm2) as compared to conventionally grown samples on unpatterned (0001) on-axis 4H-SiC (2×109/cm2), coupled with a 3-5 times increase in grain size. A comparison of a GaN film on the step-free 4H-SiC mesa region with a GaN film on a stepped 4H-SiC mesa region on the same substrate showed that the presence of surface steps reduced the overall grain size of the film from 7-10μm to a grain size of about 2-3μm. Since the GaN films grow via a Volmer-Weber mechanism, a decrease in the number of heterogeneous nucleation sites may allow the growth of large GaN islands before coalescence, thus reducing the number of threading dislocations. These results are promising for the further development of unique, low-dislocation density active regions for GaN device structures on 4H-SiC.

  5. Anisotropic structural and optical properties of semi-polar (11–22) GaN grown on m-plane sapphire using double AlN buffer layers

    PubMed Central

    Zhao, Guijuan; Wang, Lianshan; Yang, Shaoyan; Li, Huijie; Wei, Hongyuan; Han, Dongyue; Wang, Zhanguo

    2016-01-01

    We report the anisotropic structural and optical properties of semi-polar (11–22) GaN grown on m-plane sapphire using a three-step growth method which consisted of a low temperature AlN buffer layer, followed by a high temperature AlN buffer layer and GaN growth. By introducing double AlN buffer layers, we substantially improve the crystal and optical qualities of semi-polar (11–22) GaN, and significantly reduce the density of stacking faults and dislocations. The high resolution x-ray diffraction measurement revealed that the in-plane anisotropic structural characteristics of GaN layer are azimuthal dependent. Transmission electron microscopy analysis showed that the majority of dislocations in the GaN epitaxial layer grown on m-sapphire are the mixed-type and the orientation of GaN layer was rotated 58.4° against the substrate. The room temperature photoluminescence (PL) spectra showed the PL intensity and wavelength have polarization dependence along parallel and perpendicular to the [1–100] axis (polarization degrees ~ 0.63). The realization of a high polarization semi-polar GaN would be useful to achieve III-nitride based lighting emission device for displays and backlighting. PMID:26861595

  6. Dislocation-assisted tunnelling of charge carriers across the Schottky barrier on the hydride vapour phase epitaxy grown GaN

    NASA Astrophysics Data System (ADS)

    Chatterjee, Abhishek; Khamari, Shailesh K.; Dixit, V. K.; Oak, S. M.; Sharma, T. K.

    2015-11-01

    Barrier height and Ideality factor of Ni/n-GaN Schottky diodes are measured by performing temperature dependent current-voltage measurements. The measured value of barrier height is found to be much smaller than the theoretically calculated Schottky-Mott barrier height for the Ni/n-GaN diodes. Furthermore, a high value of ideality factor (>2) is measured at low temperatures. In order to understand these results, we need to consider a double Gaussian distribution of barrier height where the two components are related to the thermionic emission and thermionic filed emission mediated by dislocation-assisted tunnelling of carriers across the Schottky barrier. Thermionic emission is seen to dominate at temperatures higher than 170 K while the dislocation-assisted tunnelling dominates at low temperatures. The value of characteristic tunnelling energy measured from the forward bias current-voltage curves also confirms the dominance of dislocation-assisted tunnelling at low temperatures which is strongly corroborated by the Hall measurements. However, the value of characteristic tunnelling energy for high temperature range cannot be supported by the Hall results. This discrepancy can be eliminated by invoking a two layer model to analyse the Hall data which confirms that the charged dislocations, which reach the sample surface from the layer-substrate interface, provide an alternate path for the transport of carriers. The dislocation-assisted tunnelling of carriers governs the values of Schottky diode parameters at low temperature and the same is responsible for the observed inhomogeneity in the values of barrier height. The present analysis is applicable wherever the charge transport characteristics are severely affected by the presence of a degenerate layer at GaN-Sapphire interface and dislocations lines pierce the Schottky junction to facilitate the tunnelling of carriers.

  7. Geometrically necessary dislocation density measurements at a grain boundary due to wedge indentation into an aluminum bicrystal

    NASA Astrophysics Data System (ADS)

    Dahlberg, C. F. O.; Saito, Y.; Öztop, M. S.; Kysar, J. W.

    2017-08-01

    An aluminum bicrystal with a symmetric tilt Σ43 (3 3 5)[1 1 0] coincident site lattice grain boundary was deformed plastically via wedge indentation under conditions that led to a plane strain deformation state. Plastic deformation is induced into both crystals and the initially straight grain boundary developed a significant curvature. The resulting lattice rotation field was measured via Electron Backscatter Diffraction (EBSD). The Nye dislocation density tensor and the associated Geometrically Necessary Dislocation (GND) densities introduced by the plastic deformation were calculated. The grain boundary served as an impediment to plastic deformation as quantified through a smaller lattice rotation magnitude and smaller GND density magnitudes in one of the crystals. There is evidence that the lattice rotations in one grain brought a slip system in that grain into alignment with a slip system in the other grain, upon which the impediment to dislocation transmission across the grain boundary was reduced. This allowed the two slip systems to rotate together in tandem at later stages of the deformation. Finite element crystal plasticity simulations using classical constitutive hardening relationship capture the general features observed in the experiments.

  8. Effects of γ' Precipitation, Dislocation Density, and Grain Size on Stress-Relaxation Properties of INCONEL X-750 Helical Springs

    NASA Astrophysics Data System (ADS)

    Ha, Jeong Won; Seong, Baek Seok; Woo, Wanchuck; Jeong, Hi Won; Choi, Yoon Suk; Kang, Namhyun

    2017-08-01

    INCONEL X-750 specimens were manufactured into helical springs by drawing and coiling followed by aging. They were subsequently subjected to stress-relaxation tests. Stress relaxation is the important property of springs that are compressed at elevated temperatures. To understand stress relaxation, this study investigated the effect of the drawing ratio (DR) on the γ' size and volume fraction, grain size, carbide volume fraction, and dislocation density. Small-angle neutron scattering was used to measure the size and volume fraction of γ' phase, and X-ray diffraction was employed to analyze the dislocation density in the springs as a function of the DR. The smallest DR specimen (DR0) had a longer free length than the larger DR specimens (DR17 and DR42) after the stress-relaxation test was completed at 773 K (500 °C) for 300 hours. However, the size and volume fraction of γ', along with the dislocation density, had no influence on the stress relaxation of the INCONEL X-750 springs. The decreased grain size ( d) due to an increase in the DR was the main factor in the increase in the stress relaxation of the springs. The decrease in grain size displayed a nonlinear relationship with the increase in stress relaxation. The stress-relaxation behavior relationship was d -3. Grain boundaries were determined to play a role in dislocation sink via transmission electron microscopy (TEM) observations. Grain boundary diffusion accommodated by slip was responsible for the stress-relaxation properties of the spring at an elevated temperature (773 K = 500 °C).

  9. Neutron diffraction measurement of residual stresses, dislocation density and texture in Zr-bonded U-10Mo “mini” fuel foils and plates

    SciTech Connect

    Brown, Donald William; Okuniewski, Maria A.; Sisneros, Thomas A.; Clausen, Bjorn; Moore, Glenn A.; Balogh, Levente

    2016-12-01

    Here, Al clad U-10Mo fuel plates are being considered for conversion of several research reactors from high-enriched to low-enriched U fuel. Neutron diffraction measurements of the textures, residual phase stresses, and dislocation densities in the individual phases of the mini-foils throughout several processing steps and following hot-isostatic pressing to the Al cladding, have been completed. Recovery and recrystallization of the bare U-10Mo fuel foil, as indicated by the dislocation density and texture, are observed depending on the state of the material prior to annealing and the duration and temperature of the annealing process. In general, the cladding procedure significantly reduces the dislocation density, but the final state of the clad plate, both texture and dislocation density, depends strongly on the final processing step of the fuel foil. In contrast, the residual stress state of the final plate is dominated by the thermal expansion mismatch of the constituent materials.

  10. Neutron diffraction measurement of residual stresses, dislocation density and texture in Zr-bonded U-10Mo "mini" fuel foils and plates

    NASA Astrophysics Data System (ADS)

    Brown, D. W.; Okuniewski, M. A.; Sisneros, T. A.; Clausen, B.; Moore, G. A.; Balogh, L.

    2016-12-01

    Al clad U-10Mo fuel plates are being considered for conversion of several research reactors from high-enriched to low-enriched U fuel. Neutron diffraction measurements of the textures, residual phase stresses, and dislocation densities in the individual phases of the mini-foils throughout several processing steps and following hot-isostatic pressing to the Al cladding, have been completed. Recovery and recrystallization of the bare U-10Mo fuel foil, as indicated by the dislocation density and texture, are observed depending on the state of the material prior to annealing and the duration and temperature of the annealing process. In general, the cladding procedure significantly reduces the dislocation density, but the final state of the clad plate, both texture and dislocation density, depends strongly on the final processing step of the fuel foil. In contrast, the residual stress state of the final plate is dominated by the thermal expansion mismatch of the constituent materials.

  11. Continuity of dislocations

    SciTech Connect

    Bloomer, I.; Charap, J.M.

    1985-09-01

    Dislocation continuity is derived from the Bilby--Kondo theory of dislocations using exterior calculus. Dislocation density is represented by the torsion vector-valued two-form. Burgers vectors are associated with the vector part of the torsion while dislocation lines are associated with the two-form part. The exterior derivative of the torsion is shown to vanish when the crystal curvature vanishes. This implies two simultaneous continuity conditions: Burgers vector conservation and continuity of dislocation lines. On the other hand, dislocation continuity is violated when the curvature does not vanish. Since this can occur on grain boundaries it is inferred that grain boundaries are regions where crystal curvature is concentrated.

  12. Raman mapping of hexagonal hillocks in N-polar GaN grown on c-plane sapphire

    NASA Astrophysics Data System (ADS)

    Jiang, Teng; Lin, Zhiyu; Zhang, Jincheng; Xu, Shengrui; Huang, Jun; Niu, Mutong; Gao, Xiaodong; Guo, Lixin; Hao, Yue

    2017-04-01

    A large amount of huge hexagonal hillocks were observed on the surface of N-polar GaN film grown on c-plane sapphire substrate by MOCVD. The distribution of residual stress and dislocation density in a typical hexagonal hillock was investigated by the mapping measurement of Micro-Raman and Cathodoluminescence (CL) spectroscopy. It is found that the residual stress at the top region of the hillock is much smaller than that of the sidewall region and the region around the hillock. Meanwhile, the CL images confirmed that the dislocation density around the hexagonal hillock is higher than the top region of the hillock. The bending and annihilation of the dislocations during the growth of the hexagonal hillock result in the relaxation of residual stress which should be responsible for the spatial variation of dislocation density and residual stress.

  13. Microtwins and their effect on accumulation of excess dislocation density in grains with different types of crystal lattice bending in deformed austenitic steel

    SciTech Connect

    Gibert, Ivan; Kiseleva, Svetlana Popova, Natalya Koneva, Nina Kozlov, Eduard

    2016-01-15

    The investigation of excess dislocation density accumulation in the deformed polycrystalline austenitic steel was carried out using transmission electron microscopy (TEM). The distributions of the excess dislocation density in the grains of the deformed austenitic steel with different bending types were obtained and plotted. It was established that in the austenitic polycrystalline steel at the deformation degrees ε = 14 and 25 % the distributions of the excess dislocation density are multimodal. In both cases the grain with compound bending is more stressed. The values of the average excess dislocation density in the grains with the compound and simple bending are less at ε = 25 % than that at ε = 14 %. This is explained by a significant relaxation of the internal stresses in steel with the increase of the deformation degree from 14 % to 25 %. The increase of the number of twinning systems and the material volume fraction covered by twinning leads to the internal stress relaxation and consequently to the increase of the excess dislocation density. The presence of microtwins in the deformed material has an influence on the distribution of the excess dislocation density. In the deformed polycrystalline austenitic steel the number of grains with compound bending is increased with the increase of the plastic deformation degree.

  14. The Use of Selective Area Growth for the Reduction of Threading Dislocation Densities in Heteroepitaxy.

    DTIC Science & Technology

    1994-03-31

    M. Umeo, J. Appi Phys. 68,5115 (1990). 8. M. Tamura A. Hashimoto and N. Sugiyama, J Appl. Phys. 70,4770 (1991). 9. M.S. Abrahams , L.R. Weisberg, CJ... microanalysis to correspond to the loss of Zn. We present a mechanism for the formation of the facets as a result of the change in the dislocation structure

  15. Ionic liquid gating on atomic layer deposition passivated GaN: Ultra-high electron density induced high drain current and low contact resistance

    SciTech Connect

    Zhou, Hong; Du, Yuchen; Ye, Peide D.

    2016-05-16

    Herein, we report on achieving ultra-high electron density (exceeding 10{sup 14 }cm{sup −2}) in a GaN bulk material device by ionic liquid gating, through the application of atomic layer deposition (ALD) of Al{sub 2}O{sub 3} to passivate the GaN surface. Output characteristics demonstrate a maximum drain current of 1.47 A/mm, the highest reported among all bulk GaN field-effect transistors, with an on/off ratio of 10{sup 5} at room temperature. An ultra-high electron density exceeding 10{sup 14 }cm{sup −2} accumulated at the surface is confirmed via Hall-effect measurement and transfer length measurement. In addition to the ultra-high electron density, we also observe a reduction of the contact resistance due to the narrowing of the Schottky barrier width on the contacts. Taking advantage of the ALD surface passivation and ionic liquid gating technique, this work provides a route to study the field-effect and carrier transport properties of conventional semiconductors in unprecedented ultra-high charge density regions.

  16. Ionic liquid gating on atomic layer deposition passivated GaN: Ultra-high electron density induced high drain current and low contact resistance

    NASA Astrophysics Data System (ADS)

    Zhou, Hong; Du, Yuchen; Ye, Peide D.

    2016-05-01

    Herein, we report on achieving ultra-high electron density (exceeding 1014 cm-2) in a GaN bulk material device by ionic liquid gating, through the application of atomic layer deposition (ALD) of Al2O3 to passivate the GaN surface. Output characteristics demonstrate a maximum drain current of 1.47 A/mm, the highest reported among all bulk GaN field-effect transistors, with an on/off ratio of 105 at room temperature. An ultra-high electron density exceeding 1014 cm-2 accumulated at the surface is confirmed via Hall-effect measurement and transfer length measurement. In addition to the ultra-high electron density, we also observe a reduction of the contact resistance due to the narrowing of the Schottky barrier width on the contacts. Taking advantage of the ALD surface passivation and ionic liquid gating technique, this work provides a route to study the field-effect and carrier transport properties of conventional semiconductors in unprecedented ultra-high charge density regions.

  17. GaN HEMTs

    NASA Astrophysics Data System (ADS)

    Anderson, Jonathan W.; Lee, Kyoung-Keun; Piner, Edwin L.

    2012-03-01

    Gallium nitride (GaN) has enormous potential for applications in high electron mobility transistors (HEMTs) used in RF and power devices. Intrinsic device properties such as high electron mobility, high breakdown voltage, very high current density, electron confinement in a narrow channel, and high electron velocity in the 2-dimensional electron gas of the HEMT structure are due in large part to the wide band gap of this novel semiconductor material system. This presentation discusses the properties of GaN that make it superior to other semiconductor materials, and outlines the research that will be undertaken in a new program at Texas State University to advance GaN HEMT technology. This program's aim is to further innovate the exceptional performance of GaN through improved material growth processes and epitaxial structure design.

  18. Strain-induced step bunching in orientation-controlled GaN on Si

    NASA Astrophysics Data System (ADS)

    Narita, Tetsuo; Iguchi, Hiroko; Horibuchi, Kayo; Otake, Nobuyuki; Hoshi, Shinichi; Tomita, Kazuyoshi

    2016-05-01

    We report a technique for the fabrication of high-quality GaN-on-silicon (Si) substrates for use in various power applications. GaN epitaxial layers were generated on Si(111) vicinal faces that had been previously covered with a thin coating of Al2O3 to control the orientation of the AlN seed layers. We obtained orientation-controlled GaN layers and found a linear relationship between the GaN c-axis and Si[111] tilt angles. As a result, the threading dislocation density in the AlN seed layer was reduced and high-quality GaN layers were generated. The X-ray rocking curves for these layers exhibited full width at half maximum values of 390‧‧ and 550‧‧ for the (004) and (114) reflections, respectively. Significant step bunching was observed on a GaN(0001) vicinal face produced using this technique, attributed to strain-induced attractive interactions between steps. Thus, by controlling the strain near the surface layer, we achieved the step flow growth of GaN on Si.

  19. Dislocations as a boundary between charge density wave and oxygen rich phases in a cuprate high temperature superconductor

    NASA Astrophysics Data System (ADS)

    Poccia, Nicola; Ricci, Alessandro; Campi, Gaetano; Bianconi, Antonio

    2017-03-01

    Multiple functional ionic and electronic orders are observed in high temperature superconducting cuprates. The charge density wave order is one of them and it is spatially localized in different regions of the material. It is also known that the oxygen interstitials introduced by chemical intercalation self-organize in different oxygen rich regions corresponding with hole rich regions in the CuO2 layers left empty by the charge density wave order domains. However, what happens in between these two orders is not known, and neither there is a method to control this spatial separation. Here we demonstrate by using scanning nano x-ray diffraction, that dislocations or grain boundaries in the material can act as boundary between charge density wave and oxygen rich phases in a optimally doped {{La}}2{{CuO}}4+y high temperature superconductor. Dislocations can be used therefore to control the anti-correlation of the charge density wave order with the oxygen interstitials in specific portion of the material.

  20. The Effect of Grain Size and Dislocation Density on the Tensile Properties of Ni-SiCNP Composites During Annealing

    NASA Astrophysics Data System (ADS)

    Yang, Chao; Huang, Hefei; Thorogood, Gordon James; Jiang, Li; Ye, Xiangxi; Li, Zhijun; Zhou, Xingtai

    2016-03-01

    The grain size refinement, enhancement of mechanical properties, and static recrystallization behavior of metallic nickel-silicon carbide nano-particle (Ni-3wt.%SiCNP) composites, milled for times ranging from 8 to 48 h have been examined. One set of Ni-SiCNP composite samples were annealed at 300 °C for 250 h, while the other set of samples were maintained at room temperature for control purposes (reference). The electron backscatter diffraction results indicate that the grain size of the annealed Ni-SiCNP composite was refined due to grain restructuring during static recrystallization. The x-ray diffraction results indicate that low-temperature annealing effectively reduced the density of dislocations; this can be explained by the dislocation pile-up model. Additionally, the tensile tests indicated that the annealed Ni-SiCNP composite had a significant increase in strength due to an increase of the Hall-Petch strengthening effect with a slight increase in the total elongation. The decrease of dislocation pile-up in the grain interiors and the increase in grain boundary sliding are assumed to be the main mechanisms at play. The relationship between the microstructural evolution and the variation of tensile properties is examined in this study.

  1. Halogen-free vapor phase epitaxy for high-rate growth of GaN bulk crystals

    NASA Astrophysics Data System (ADS)

    Nakamura, Daisuke; Kimura, Taishi; Horibuchi, Kayo

    2017-04-01

    Here, we propose a halogen-free vapor phase epitaxy (HF-VPE) technique to grow bulk GaN single crystals. This technique employs the simplest reaction for GaN synthesis (reaction of Ga vapor with NH3) and can potentially achieve a high growth rate, a prolonged growth duration, a high crystal quality, and a low cost. The analyses of thick HF-VPE-GaN layers grown under optimized growth conditions revealed that high-quality crystals, both in terms of dislocation density and impurity concentration, are obtained at high growth rates of over 100 µm/h.

  2. High-quality GaN films obtained by air-bridged lateral epitaxial growth

    NASA Astrophysics Data System (ADS)

    Ishibashi, Akihiko; Kidoguchi, Isao; Sugahara, Gaku; Ban, Yuzaburoh

    2000-12-01

    High-quality GaN films with low dislocation density and low wing tilt of c-axis orientation have been successfully obtained by a promising technique of selected area growth, namely air-bridged lateral epitaxial growth (ABLEG). A GaN film was grown from the exposed (0 0 0 1) top facet of the ridged GaN seed structures, whose side walls and etched bottoms were covered with silicon nitride mask, using low-pressure metalorganic vapor-phase epitaxy. The ridge-stripe structures of the GaN seed were constructed in the 1 1¯00 GaN direction. At the optimum growth temperature of 950°C, only the 1 1 2¯ 0 and {0 0 0 1} facets were obtained. Continuing the growth led to fabricating the air-bridged structure, where the coalescence of the wing region occurred. From the transmission electron microscopy study, it was found that most of the vertical dislocations along the c-axis were confined to the seed region, while the horizontal dislocations were newly generated in the vicinity of coalescence boundary. The densities of the vertical dislocations were about 9×10 8 cm -2 in the seed region, while below 1×10 6 cm -2 in other regions. The densities of the horizontal dislocations were about 1×10 6 cm -2 in the wing region and 4×10 7 cm -2 in the vicinity of the coalescence boundary, respectively. The X-ray diffraction (XRD) measurements revealed that the tilt angle of c-axis relative to underlying seed GaN was about 297 arcsec (0.083°), and the full-width at half-maximum of the XRD curve for the wing region was 138 arcsec, indicating that the wing region has high uniformity of c-axis orientation. Both of the wing and the coalescence boundary region exhibited atomically smooth surfaces with stepped terraces, whose root mean square roughness was found to be 0.089 nm by atomic force microscopy measurements.

  3. GaN and AlGaN/GaN heterostructures grown on two dimensional BN templates

    NASA Astrophysics Data System (ADS)

    Snure, Michael; Siegel, Gene; Look, David C.; Paduano, Qing

    2017-04-01

    Two dimension materials, like BN and graphene, have been shown to be excellent templates for the growth and fabrication of freestanding III-nitride materials. In this paper we study the effects of BN morphology on GaN and AlGaN/GaN heterostructures grown on these templates. The crystallinity, transport, and optical properties of the GaN layer are examined and found to be well correlated to the BN template. The self-separation of GaN from the BN/sapphire template is also connected to morphology, resulting in freestanding GaN layers. Transport properties of Si doped GaN and AlGaN/GaN heterostructures were examined for different BN templates. The bulk GaN mobility was closely linked to the morphology of the BN template resulting in room temperature mobility from 395 to 520 cm2/Vs. The range in 3D mobility can be linked to increased dislocation densities in GaN grown on rougher BN templates. High 2DEG mobility ( 2000 cm2/Vs at 300 K) is achieved in AlGaN/GaN grown on atomically smooth BN templates, with a sheet electron density of 1×1013 cm-2, comparable to values obtained on conventional substrates. Samples grown on BN/sapphire showed mobilities (at 9 K) from 33000 cm2/Vs to 15200 cm2/Vs depending on BN roughness. The differences are associated with variations in AlGaN/GaN interface-roughness scattering and dislocation density due to the BN template morphology.

  4. Control of GaN crystal habit by solution stirring in the Na-flux method

    NASA Astrophysics Data System (ADS)

    Murakami, Kosuke; Imade, Mamoru; Imanishi, Masayuki; Honjo, Masatomo; Imabayashi, Hiroki; Matsuo, Daisuke; Nakamura, Kosuke; Maruyama, Mihoko; Yoshimura, Masashi; Mori, Yusuke

    2017-01-01

    In our previous study, we succeeded in fabricating low-curvature GaN wafers with low dislocation density by the Na-flux coalescence growth technique. However, the crystals consisted of many pyramidal grains with (10\\bar{1}1) facets, leading to an increase in the oxygen concentration in the crystal, an increase in the lattice constant, and blackening. In this study, we attempted to improve the crystal habit of the GaN crystals by employing a solution-stirring technique in the coalescence growth on multipoint seeds. Scanning electron microscope images indicated that the c-face area became larger by increasing the stirring rate and growth period. We concluded that solution stirring in the Na-flux coalescence growth technique is an effective approach to improve the crystal habit and uniformize the lattice constant of GaN crystals.

  5. Microstructure of GaN epitaxy on SiC using AlN buffer layers

    SciTech Connect

    Ponce, F.A.; Krusor, B.S.; Major, J.S. Jr.; Plano, W.E.; Welch, D.F.

    1995-07-17

    The crystalline structure of GaN epilayers on (0001) SiC substrates has been studied using x-ray diffraction and transmission microscopy. The films were grown by metalorganic chemical vapor deposition, using AlN buffer layers. X-ray diffraction measurements show negligible strain in the epilayer, and a long-range variation in orientation. Transmission electron lattice images show that the AlN buffer layer consists of small crystallites. The nature of the buffer layer and its interfaces with the substrate and the GaN film is discussed. The defect structure of the GaN film away from the substrate consists mostly of threading dislocations with a density of {similar_to}10{sup 9} cm{sup {minus}2}. {copyright} {ital 1995} {ital American} {ital Institute} {ital of} {ital Physics}.

  6. (-201) β-Gallium oxide substrate for high quality GaN materials

    NASA Astrophysics Data System (ADS)

    Roqan, I. S.; Muhammed, M. M.

    2014-03-01

    (-201) oriented β-Ga2O3 has the potential to be used as a transparent and conductive substrate for GaN-growth. The key advantages of Ga2O3 are its small lattice mismatches (4.7%), appropriate structural, thermal and electrical properties and a competitive price compared to other substrates. Optical characterization show that GaN layers grown on (-201) oriented β-Ga2O3 are dominated by intense bandedge emission with a high luminescence efficiency. Atomic force microscopy studies show a modest threading dislocation density of ~108 cm-2, while complementary Raman spectroscopy indicates that the GaN epilayer is of high quality with slight compressive strain. Room temperature time-findings suggest that the limitation of the photoluminescence lifetime (~500 ps) is due to nonradiative recombination arising from threading dislocation. Therefore, by optimizing the growth conditions, high quality material with significant optical efficiency can be obtained.

  7. The effect of illumination power density on carbon defect configuration in silicon doped GaN

    NASA Astrophysics Data System (ADS)

    Kaess, Felix; Reddy, Pramod; Alden, Dorian; Klump, Andrew; Hernandez-Balderrama, Luis H.; Franke, Alexander; Kirste, Ronny; Hoffmann, Axel; Collazo, Ramón; Sitar, Zlatko

    2016-12-01

    A study of efficacy of point defect reduction via Fermi level control during growth of GaN:Si as a function of above bandgap illumination power density and hence excess minority carrier density is presented. Electrical characterization revealed an almost two-fold increase in carrier concentration and a three-fold increase in mobility by increasing the illumination power density from 0 to 1 W cm-2, corroborating a decrease in compensation and ionic impurity scattering. The effect was further supported by the photoluminescence studies, which showed a monotonic decrease in yellow luminescence (attributed to CN) as a function of illumination power density. Secondary ion mass spectroscopy studies showed no effect of illumination on the total incorporation of Si or C. Thus, it is concluded that Fermi level management changed the configuration of the C impurity as the CN-1 configuration became energetically less favorable due to excess minority carriers.

  8. MOVPE growth of GaN on 6-inch SOI-substrates: effect of substrate parameters on layer quality and strain

    NASA Astrophysics Data System (ADS)

    Lemettinen, J.; Kauppinen, C.; Rudzinski, M.; Haapalinna, A.; Tuomi, T. O.; Suihkonen, S.

    2017-04-01

    We demonstrate that higher crystalline quality, lower strain and improved electrical characteristics can be achieved in gallium nitride (GaN) epitaxy by using a silicon-on-insulator (SOI) substrate compared to a bulk silicon (Si) substrate. GaN layers were grown by metal–organic vapor phase epitaxy on 6-inch bulk Si and SOI wafers using the standard step graded AlGaN and AlN approach. The GaN layers grown on SOI exhibited lower strain according to x-ray diffraction analysis. Defect selective etching measurements suggested that the use of SOI substrate for GaN epitaxy reduces the dislocation density approximately by a factor of two. Furthermore, growth on SOI substrate allows one to use a significantly thinner AlGaN buffer compared to bulk Si. Synchrotron radiation x-ray topography analysis confirmed that the stress relief mechanism in GaN on SOI epitaxy is the formation of a dislocation network to the SOI device Si layer. In addition, the buried oxide layer significantly improves the vertical leakage characteristics as the onset of the breakdown is delayed by approximately 400 V. These results show that the GaN on the SOI platform is promising for power electronics applications.

  9. Influence of different aspect ratios on the structural and electrical properties of GaN thin films grown on nanoscale-patterned sapphire substrates

    NASA Astrophysics Data System (ADS)

    Lee, Fang-Wei; Ke, Wen-Cheng; Cheng, Chun-Hong; Liao, Bo-Wei; Chen, Wei-Kuo

    2016-07-01

    This study presents GaN thin films grown on nanoscale-patterned sapphire substrates (NPSSs) with different aspect ratios (ARs) using a homemade metal-organic chemical vapor deposition system. The anodic aluminum oxide (AAO) technique is used to prepare the dry etching mask. The cross-sectional view of the scanning electron microscope image shows that voids exist between the interface of the GaN thin film and the high-AR (i.e. ∼2) NPSS. In contrast, patterns on the low-AR (∼0.7) NPSS are filled full of GaN. The formation of voids on the high-AR NPSS is believed to be due to the enhancement of the lateral growth in the initial growth stage, and the quick-merging GaN thin film blocks the precursors from continuing to supply the bottom of the pattern. The atomic force microscopy images of GaN on bare sapphire show a layer-by-layer surface morphology, which becomes a step-flow surface morphology for GaN on a high-AR NPSS. The edge-type threading dislocation density can be reduced from 7.1 × 108 cm-2 for GaN on bare sapphire to 4.9 × 108 cm-2 for GaN on a high-AR NPSS. In addition, the carrier mobility increases from 85 cm2/Vs for GaN on bare sapphire to 199 cm2/Vs for GaN on a high-AR NPSS. However, the increased screw-type threading dislocation density for GaN on a low-AR NPSS is due to the competition of lateral growth on the flat-top patterns and vertical growth on the bottom of the patterns that causes the material quality of the GaN thin film to degenerate. Thus, the experimental results indicate that the AR of the particular patterning of a NPSS plays a crucial role in achieving GaN thin film with a high crystalline quality.

  10. 444 nm InGaN light emitting diodes on low-defect-density (11\\bar{2}2) GaN templates on patterned sapphire

    NASA Astrophysics Data System (ADS)

    Khoury, Michel; Li, Hongjian; Kuritzky, Leah Y.; Mughal, Asad J.; DeMierry, Philippe; Nakamura, Shuji; Speck, James S.; DenBaars, Steven P.

    2017-10-01

    Efficient InGaN-based 444 nm blue light-emitting diodes (LEDs) were fabricated on low-defect-density (11\\bar{2}2) semipolar GaN templates grown on patterned r-sapphire. At 20 A/cm2, the packaged (11\\bar{2}2) LEDs exhibited a light output power of 2.9 mW (17.8 mW at 100 A/cm2) and a record peak external quantum efficiency of 6.4% showing a negligible efficiency droop and blue shift with drive currents up to 100 A/cm2. In addition, we demonstrated light extraction simulations for the (11\\bar{2}2) template, which showed that the structured pattern is not only beneficial for limiting the defect propagation but also increases the light extraction by 29% compared with GaN layers grown on planar substrates.

  11. The Weighted Burgers Vector: a new quantity for constraining dislocation densities and types using electron backscatter diffraction on 2D sections through crystalline materials.

    PubMed

    Wheeler, J; Mariani, E; Piazolo, S; Prior, D J; Trimby, P; Drury, M R

    2009-03-01

    The Weighted Burgers Vector (WBV) is defined here as the sum, over all types of dislocations, of [(density of intersections of dislocation lines with a map) x (Burgers vector)]. Here we show that it can be calculated, for any crystal system, solely from orientation gradients in a map view, unlike the full dislocation density tensor, which requires gradients in the third dimension. No assumption is made about gradients in the third dimension and they may be non-zero. The only assumption involved is that elastic strains are small so the lattice distortion is entirely due to dislocations. Orientation gradients can be estimated from gridded orientation measurements obtained by EBSD mapping, so the WBV can be calculated as a vector field on an EBSD map. The magnitude of the WBV gives a lower bound on the magnitude of the dislocation density tensor when that magnitude is defined in a coordinate invariant way. The direction of the WBV can constrain the types of Burgers vectors of geometrically necessary dislocations present in the microstructure, most clearly when it is broken down in terms of lattice vectors. The WBV has three advantages over other measures of local lattice distortion: it is a vector and hence carries more information than a scalar quantity, it has an explicit mathematical link to the individual Burgers vectors of dislocations and, since it is derived via tensor calculus, it is not dependent on the map coordinate system. If a sub-grain wall is included in the WBV calculation, the magnitude of the WBV becomes dependent on the step size but its direction still carries information on the Burgers vectors in the wall. The net Burgers vector content of dislocations intersecting an area of a map can be simply calculated by an integration round the edge of that area, a method which is fast and complements point-by-point WBV calculations.

  12. GaN Quantum Dot Superlattices Grown by Molecular Beam Epitaxy at High Temperature

    SciTech Connect

    Xu,T.; Zhou, L.; Wang, Y.; Ozcan, A.; Ludwig, K.; Smith, D.; Moustakas, T.

    2007-01-01

    In this paper, we report the growth of GaN quantum dot superlattices (QDSLs) with AlN barriers on (0001) sapphire substrates by molecular beam epitaxy at relatively high temperature (770? C) using the modified Stranski-Krastanov growth mode. Observations with atomic force microscopy show that the height distribution of the dots depends strongly on the number of GaN monolayers (MLs) grown on the AlN barriers. Specifically, the height distribution consists of two Gaussian distributions (bimodal) for coverages of 3 or 4 ML, and becomes a single Gaussian distribution for 5 and 6 ML of coverage. Furthermore, the density of quantum dots increases with the degree of coverage and saturates at 2x1011?dots/cm2. An increase in the number of stacks in the superlattice structure with 4 ML coverage also leads to a more pronounced bimodal height distribution. Electron microscopy observations indicate that the GaN QDs are truncated pyramids faceted along the {l_brace}1math03{r_brace} planes and suggest that larger dots are associated with threading dislocations which presumably provide low-energy nucleation sites. Transmission electron microscopy studies also indicate that most of the larger dots are nucleated next to edge-type dislocations, while most of the smaller dots are located in dislocation-free regions. These GaN QDSLs were also studied by grazing-incidence small angle x-ray scattering and grazing-incidence x-ray diffraction methods. The average lateral deviation and the vertical correlation length between QD positions for two successive layers were determined to be 1.4?nm and 190?nm, respectively. A GaN QD growth model is proposed to explain the phenomenon.

  13. Hydride vapor phase GaN films with reduced density of residual electrons and deep traps

    SciTech Connect

    Polyakov, A. Y.; Smirnov, N. B.; Govorkov, A. V.; Yugova, T. G.; Cox, H.; Helava, H.; Makarov, Yu.; Usikov, A. S.

    2014-05-14

    Electrical properties and deep electron and hole traps spectra are compared for undoped n-GaN films grown by hydride vapor phase epitaxy (HVPE) in the regular process (standard HVPE samples) and in HVPE process optimized for decreasing the concentration of residual donor impurities (improved HVPE samples). It is shown that the residual donor density can be reduced by optimization from ∼10{sup 17} cm{sup −3} to (2–5) × 10{sup 14} cm{sup −3}. The density of deep hole traps and deep electron traps decreases with decreased donor density, so that the concentration of deep hole traps in the improved samples is reduced to ∼5 × 10{sup 13} cm{sup −3} versus 2.9 × 10{sup 16} cm{sup −3} in the standard samples, with a similar decrease in the electron traps concentration.

  14. Modified internal state variable models of plasticity using nonlocal integrals in damage and gradients in dislocation density

    NASA Astrophysics Data System (ADS)

    Ahad, Fazle Rabbi

    To enhance material performance at different length scales, this study strives to develop a reliable analytical and computational tool with the help of internal state variables spanning micro and macro-level behaviors. First, the practical relevance of a nonlocal damage integral added to an internal state variable (BCJ) model is studied to alleviate numerical instabilities associated within the post-bifurcation regime. The characteristic length scale in the nonlocal damage, which is mathematical in nature, can be calibrated using a series of notch tensile tests. Then the same length scale from the notch tests is used in solving the problem of a high-velocity (between 89 and 107 m/s) rigid projectile colliding against a 6061-T6 aluminum-disk. The investigation indicates that incorporating a characteristic length scale to the constitutive model eliminates the pathological mesh-dependency associated with material instabilities. In addition, the numerical calculations agree well with experimental data. Next, an effort is made rather to introduce a physically motivated length scale than to apply a mathematical-one in the deformation analysis. Along this line, a dislocation based plasticity model is developed where an intrinsic length scale is introduced in the forms of spatial gradients of mobile and immobile dislocation densities. The spatial gradients are naturally invoked from balance laws within a consistent kinematic and thermodynamic framework. An analytical solution of the model variables is derived at homogenous steady state using the linear stability and bifurcation analysis. The model qualitatively captures the formation of dislocation cell-structures through material instabilities at the microscopic level. Finally, the model satisfactorily predicts macroscopic mechanical behaviors - e.g., multi-strain rate uniaxial compression, simple shear, and stress relaxation - and validates experimental results.

  15. A nitrogen doped low-dislocation density free-standing single crystal diamond plate fabricated by a lift-off process

    SciTech Connect

    Mokuno, Yoshiaki Kato, Yukako; Tsubouchi, Nobuteru; Chayahara, Akiyoshi; Yamada, Hideaki; Shikata, Shinichi

    2014-06-23

    A nitrogen-doped single crystal diamond plate with a low dislocation density is fabricated by chemical vapor deposition (CVD) from a high pressure high temperature synthetic type IIa seed substrate by ion implantation and lift-off processes. To avoid sub-surface damage, the seed surface was subjected to deep ion beam etching. In addition, we introduced a nitrogen flow during the CVD step to grow low-strain diamond at a relatively high growth rate. This resulted in a plate with low birefringence and a dislocation density as low as 400 cm{sup −2}, which is the lowest reported value for a lift-off plate. Reproducing this lift-off process may allow mass-production of single crystal CVD diamond plates with low dislocation density and consistent quality.

  16. The dislocation density and twin-boundary frequency determined by X-ray peak profile analysis in cold rolled magnetron-sputter deposited nanotwinned copper

    SciTech Connect

    Csiszar, Gabor; Ungar, Tamas; Balogh, Levente; Misra, Amit; Zhang Xinghang

    2011-08-15

    The dislocation density and the average twin boundary frequency is determined quantitatively in as-deposited and cold-rolled nanotwinned Cu thin films by high-resolution X-ray line profile analysis. After cold-rolling the dislocation density increases considerably, whereas the twin boundary frequency decreases only slightly. The physical parameters of the substructure provided by the quantitative X-ray analysis are in agreement with earlier transmission electron microscopy observations. The flow stress of the as-deposited and the cold-rolled films is directly correlated with the average thickness of twin lamellae and the dislocation density by taking into account the Hall-Petch and Taylor type strengthening mechanisms.

  17. Enhanced terahertz radiation from high stacking fault density nonpolar GaN

    NASA Astrophysics Data System (ADS)

    Metcalfe, Grace D.; Shen, Hongen; Wraback, Michael; Hirai, Asako; Wu, Feng; Speck, James S.

    2008-06-01

    Terahertz emission from high stacking fault density m-GaN has been observed using ultrafast pulse excitation. The terahertz signal exhibits a 360° periodicity with sample rotation and a polarity flip at 180°, characteristic of real carrier transport in an in-plane electric field parallel to the c axis induced by stacking fault (SF)-terminated internal polarization at wurtzite domain boundaries. The terahertz emission can be enhanced by several times relative to that from a SF-free m-GaN sample, for which the terahertz signal emanates from surface surge currents and diffusion-driven carrier transport normal to the surface and is independent of the c-axis orientation.

  18. Microstructures of GaN and In{sub x}Ga{sub 1-x}N films grown by MOCVD on free-standing GaN templates

    SciTech Connect

    Jasinski, J.; Liliental-Weber, Z.; Huang, D.; Reshchikov, M.A.; Yun, F.; Morkoc, H.; Sone, C.; Park, S.S.; Lee, K.Y.

    2002-04-30

    We summarize structural properties of thick HVPE GaN templates from the point of view of their application as substrates for growth of nitride layers. This is followed by the results of optical and structural studies, mostly transmission electron microscopy, of nitride layers grown by MOCVD on top of the HVPE substrates. The results indicate high structural quality of these layers with a low density of threading dislocations (in the range of 10{sup 6} cm{sup -2}). Convergent beam electron diffraction studies showed that the MOCVD GaN films have Ga-polarity, the same polarity as the HVPE GaN substrates. Structural studies of an InGaN layer grown on top of the MOCVD GaN film showed the presence of two layers, which differed in lattice parameter and composition. The upper layer, on the top of the structure had a c-lattice parameter about 2% larger than that of GaN and contained 10.3 {+-} 0.8% of In. Values measured for the thinner, intermediate layer adjacent to the GaN layer were about 2 .5 times lower.

  19. Structural Defects in Laterally Overgrown GaN Layers Grown onNon-polar Substrates

    SciTech Connect

    Liliental-Weber, Z.; Ni, X.; Morkoc, H.

    2007-02-14

    Transmission electron microscopy was used to study defects in lateral epitaxial layers of GaN which were overgrown on a template of a-plane (11{und 2}0) GaN grown on (1{und 1}02) r-plane Al2O3. A high density of basal stacking faults is formed in these layers because the c-planes of wurtzite structure are arranged along the growth direction. Density of these faults is decreasing at least by two orders of magnitude lower in the wings compared to the seed areas. Prismatic stacking faults and threading dislocations are also observed, but their densities drastically decrease in the wings. The wings grow with opposite polarities and the Ga-wing width is at least 6 times larger than N-wing and coalescence is rather difficult. Some tilt and twist was detected using Large Angle Convergent Beam Electron Diffraction.

  20. Adsorption of ammonia on hydrogen covered GaN(0001) surface - Density Functional Theory study

    NASA Astrophysics Data System (ADS)

    Kempisty, Paweł; Strak, Paweł; Sakowski, Konrad; Krukowski, Stanisław

    2014-09-01

    Density Functional Theory (DFT) simulations of ammonia adsorption at clean and H-covered surface confirmed that ammonia may dissociate into NH2 radical and H adatom or remain in the molecular form. The remaining hydrogen atoms are attached to Ga atoms where the charge transfer to the surface is possible. The calculations show that for the molecular process, the ammonia adsorption energy is close to 2.0 eV, independent of hydrogen coverage. The dissociative process is strongly H-coverage dependent, for low H-coverage the adsorption energy is close to 2.8 eV, for high coverage changes by more than 4 eV reaching negative values. Thus for low coverage the energetically preferred adsorption is dissociative, for high is molecular. The dissociation energy and preferred mode change are related to the change of the Fermi level pinning from Ga broken bond state to valence band maximum (VBM), confirming the decisive role of charge transfer in the adsorption processes.

  1. High Quality, Low Cost Ammonothermal Bulk GaN Substrates

    SciTech Connect

    Ehrentraut, D; Pakalapati, RT; Kamber, DS; Jiang, WK; Pocius, DW; Downey, BC; McLaurin, M; D'Evelyn, MP

    2013-12-18

    Ammonothermal GaN growth using a novel apparatus has been performed on c-plane, m-plane, and semipolar seed crystals with diameters between 5 mm and 2 in. to thicknesses of 0.5-3 mm. The highest growth rates are greater than 40 mu m/h and rates in the 10-30 mu m/h range are routinely observed for all orientations. These values are 5-100x larger than those achieved by conventional ammonothermal GaN growth. The crystals have been characterized by X-ray diffraction rocking-curve (XRC) analysis, optical and scanning electron microscopy (SEM), cathodoluminescence (CL), optical spectroscopy, and capacitance-voltage measurements. The crystallinity of the grown crystals is similar to or better than that of the seed crystals, with FWHM values of about 20-100 arcsec and dislocation densities of 1 x 10(5)-5 x 10(6) cm(-2). Dislocation densities below 10(4) cm(-2) are observed in laterally-grown crystals. Epitaxial InGaN quantum well structures have been successfully grown on ammonothermal wafers. (C) 2013 The Japan Society of Applied Physics

  2. Nearly stress-free substrates for GaN homoepitaxy

    NASA Astrophysics Data System (ADS)

    Hermann, M.; Gogova, D.; Siche, D.; Schmidbauer, M.; Monemar, B.; Stutzmann, M.; Eickhoff, M.

    2006-08-01

    High-quality 300 μm thick GaN crack-free layers grown by hydride vapor phase epitaxy (HVPE) on c-plane sapphire without buffer layers and separated from the substrate by laser lift-off were investigated by high resolution X-ray diffraction (XRD), low-temperature photoluminescence and cathodoluminescence. All these characterization techniques confirm the high structural quality of the resulting material. Lateral X-ray mapping of the free-standing bulk-like GaN shows a homogeneous compressive stress of less than 40 MPa and a heterogeneous stress of about 80 MPa. The formation of twin grains (domains) were observed both in the reciprocal space mapping of the (2 0 .5) reflection and in rocking curve measurements. The latter ones revealed an estimated lateral coherence length of about 1.2 μm. The crystallite size along the c-axis is estimated to be larger than 20 μm. An upper limit of the density of dislocations with a component of the Burgers vector along the c-axis (screw and mixed type) of 1.3×10 7 cm -2 was extracted from the XRD data, while transmission electron microscopy measurements revealed a dislocation density of 1.7×10 7 cm -2. Thus, these layers are suitable as lattice-parameter and thermal-expansion matched substrates for strain-free homoepitaxy of GaN-based device heterostructures.

  3. Laser diodes with 353 nm wavelength enabled by reduced-dislocation-density AlGaN templates

    DOE PAGES

    Crawford, Mary H.; Allerman, Andrew A.; Armstrong, Andrew M.; ...

    2015-10-30

    We fabricated optically pumped and electrically injected ultraviolet (UV) lasers on reduced-threading-dislocation-density (reduced-TDD) AlGaN templates. The overgrowth of sub-micron-wide mesas in the Al0.32Ga0.68N templates enabled a tenfold reduction in TDD, to (2–3) × 108 cm–2. Optical pumping of AlGaN hetero-structures grown on the reduced-TDD templates yielded a low lasing threshold of 34 kW/cm2 at 346 nm. Room-temperature pulsed operation of laser diodes at 353 nm was demonstrated, with a threshold of 22.5 kA/cm2. Furthermore, reduced-TDD templates have been developed across the entire range of AlGaN compositions, presenting a promising approach for extending laser diodes into the deep UV.

  4. Laser diodes with 353 nm wavelength enabled by reduced-dislocation-density AlGaN templates

    SciTech Connect

    Crawford, Mary H.; Allerman, Andrew A.; Armstrong, Andrew M.; Smith, Michael L.; Cross, Karen C.

    2015-10-30

    We fabricated optically pumped and electrically injected ultraviolet (UV) lasers on reduced-threading-dislocation-density (reduced-TDD) AlGaN templates. The overgrowth of sub-micron-wide mesas in the Al0.32Ga0.68N templates enabled a tenfold reduction in TDD, to (2–3) × 108 cm–2. Optical pumping of AlGaN hetero-structures grown on the reduced-TDD templates yielded a low lasing threshold of 34 kW/cm2 at 346 nm. Room-temperature pulsed operation of laser diodes at 353 nm was demonstrated, with a threshold of 22.5 kA/cm2. Furthermore, reduced-TDD templates have been developed across the entire range of AlGaN compositions, presenting a promising approach for extending laser diodes into the deep UV.

  5. Dislocation densities reduction in MBE-grown AlN thin films by high-temperature annealing

    NASA Astrophysics Data System (ADS)

    Nemoz, Maud; Dagher, Roy; Matta, Samuel; Michon, Adrien; Vennéguès, Philippe; Brault, Julien

    2017-03-01

    AlN thin films, grown on (0001) sapphire substrates by molecular beam epitaxy (MBE), were annealed at high temperature (up to 1650 °C) in flowing N2. X-ray diffraction (XRD) studies, combined with Williamson-Hall and Srikant plots, have shown that annealing leads to a strong reduction of both edge and mixed threading dislocation densities, as confirmed by transmission electron microscopy (TEM) images, up to 75%. Moreover, it is found that annealing at high temperatures allows the relaxation of the tensile strain in the AlN film due to the growth process. In addition, the morphological properties of the films were determined by atomic force microscopy (AFM) and show that the annealing conditions have a strong impact on the surface morphology and roughness. Finally, an annealing at 1550 °C for 20 min appears as an ideal tradeoff to enhance the structural properties while preserving the initial AlN surface morphology.

  6. [Elbow dislocation].

    PubMed

    de Pablo Márquez, B; Castillón Bernal, P; Bernaus Johnson, M C; Ibañez Aparicio, N M

    2017-03-09

    Elbow dislocation is the most frequent dislocation in the upper limb after shoulder dislocation. Closed reduction is feasible in outpatient care when there is no associated fracture. A review is presented of the different reduction procedures.

  7. Neutron Diffraction Measurement of Residual Stresses, Dislocation Density and Texture in Zr-bonded U-10Mo ''Mini'' Fuel Foils and Plates

    SciTech Connect

    Brown, Donald W.; Okuniewski, M. A.; Sisneros, Thomas A.; Clausen, Bjorn; Moore, G. A.; Balogh, L

    2014-08-07

    Aluminum clad monolithic uranium 10 weight percent molybdenum (U-10Mo) fuel plates are being considered for conversion of several research and test nuclear reactors from high-enriched to low-enriched uranium fuel due to the inherently high density of fissile material. Comprehensive neutron diffraction measurements of the evolution of the textures, residual phase stresses, and dislocation densities in the individual phases of the mini-foils throughout several processing steps and following hot-isostatic pressing to the Al cladding, have been completed. Recovery and recrystallization of the bare U-10Mo fuel foil, as indicated by the dislocation density and texture, are observed depending on the state of the material prior to annealing and the duration and temperature of the annealing process. In general, the HIP procedure significantly reduces the dislocation density, but the final state of the clad plate, both texture and dislocation density, depends strongly on the final processing step of the fuel foil. In contrast, the residual stresses in the clad fuel plate do not depend strongly on the final processing step of the bare foil prior to HIP bonding. Rather, the residual stresses are dominated by the thermal expansion mismatch of the constituent materials of the fuel plate.

  8. The importance of structural inhomogeneity in GaN thin films

    NASA Astrophysics Data System (ADS)

    Liliental-Weber, Z.; Reis, Roberto dos; Weyher, Jan L.; Staszczak, Grzegorz; Jakieła, Rafał

    2016-12-01

    This paper describes two types of MOCVD-grown n-type GaN layers (Samples A and B) with similar carrier concentration but behaved differently under galvanic photo-etching. In order to understand this behavior, Transmission Electron Microscopy (TEM) for cross-section and plan-view samples, Secondary Ion Mass Spectroscopy (SIMS) and photoluminescence (PL) techniques were applied. SIMS studies showed that Si, C and O are approximately at the same concentration in both samples, but Sample B also contained Fe and Mg. Both GaN samples were grown on sapphire substrate with Ga growth polarity, which was confirmed by Convergent Beam Electron Diffraction (CBED). Despite a smaller layer thickness in Sample B, the density of edge dislocations is almost one order of magnitude lower than in Sample A. In addition, planar defects formed in this sample in the transition area between the undoped buffer and Si doped layers resulted in a substantial decrease in the density of screw dislocations at the sample surface. These planar defects most probably gave rise to the PL lines observed at 3.42 eV and 3.32 eV. The new PL lines that only appeared in Sample B might be related to Mg impurities found in this sample. There were no detectable gettering of these impurities at dislocations using different diffraction conditions. However, Fe rich platelets were found only in Sample B due to the presence of Fe as well as hexagonal features, similar to defects reported earlier in highly Mg-doped GaN. These structural and chemical non-uniformities between the two GaN samples can explain their different etching behaviors. This paper demonstrates that samples with similar carrier concentrations do not necessarily ensure similar structural and optical properties and that additional material characterization are needed to ensure that devices built on such samples have similar performance.

  9. Investigation of the shear response and geometrically necessary dislocation densities in shear localization in high-purity titanium

    DOE PAGES

    Zhu, Chaoyi; Livescu, Veronica; Harrington, Tyler; ...

    2017-03-31

    The influence of microstructural anisotropy on shear response of high-purity titanium was studied using the compact forced-simple-shear specimen (CFSS) loaded under quasi-static loading conditions. Post-mortem characterization reveals significant difference in shear response of different directions in the same material due to material crystallographic texture anisotropy. Shear bands are narrower in specimens in which the shear zone is aligned along the direction with a strong {0001} basal texture. Twinning was identified as an active mechanism to accommodate strains in the shear region in both orientations. This paper confirms the applicability of the CFSS design for the investigation of differences in themore » shear response of materials as a function of process-induced crystallographic texture. A detailed, systematic approach to quantifying shear band evolution by evaluating geometrically necessary dislocations (GND) associated with crystallographic anisotropy is presented. Finally, the results show that: i) line average GND density profiles, for Ti samples that possess a uniform equiaxed-grain structure, but with strong crystallographic anisotropy, exhibit significant differences in GND density close to the shear band center; ii) GND profiles decrease steadily away from the shear band as the plastic strain diminishes, in agreement with Ashby's theory of work hardening, where the higher GND density in the through-thickness (TT) orientation is a result of restricted < a > type slip in the shear band compared with in-plane (IP) samples; iii) the anisotropy in deformation response is derived from initial crystallographic texture of the materials, where GND density of < a > GNDs are higher adjacent to the shear band in the through-thickness sample oriented away from easy slip, but the density of < c+a > type GNDs are very similar in these two samples; and iv) the increase in grain average GND density was determined to have strong correlation to an increase in the

  10. Coseismic density redistribution of the Earth interior based on the spherical dislocation theory and comparison to GRACE data

    NASA Astrophysics Data System (ADS)

    Xu, Changyi; Sun, Wenke; Fu, Guangyu; Dong, Jie

    2015-04-01

    Coseismic deformation produces sudden changes in the Earth's layered density structure due to the volume and internal topography changes, which can disturb global gravitational field. Such gravitational perturbations have been detected by the gravity space mission data (Han et al., 2006; Heki and Matsuo, 2010; Zhou et al., 2011). Han et al. (2006) discussed the gravity changes produced by the density changes related to the crustal dilatation produce by the 2004 Sumatra earthquake (Mw 9.0). But he neglected the gravity changes due to the internal topography changes, and the adopted Earth model is the simple half space media. Cambiotti et al. (2011) also discussed the gravity changes due to coseismic volume changes based on the normal mode summation, in which he took the point source as the fault model. However, the maximum coseismic changes occur in the vicinity of the fault, if the point source is adopted to conduct the near-field computation, there are many errors in the results. In this work, we present a method to compute the coseismic density changes in term of volumetric dilatation and internal topography changes based on the elastic dislocation theory. Using this computing scheme, the modelling density changes can be compared directly with the GRACE-observed ones. Combined with the finite fault model, we conduct the case study of the 2004 Sumatra earthquake (Mw 9.3) and the 2011 Tohoku-Oki earthquake (Mw 9.0). Then we compare the modelling results to the GRACE-derived surface density changes given as the equivalent water height (EWH). The comparison reveals some interesting details about the pattern and behavior of the internal density redistribution due to earthquakes at the subduction zone.

  11. Neutron diffraction measurement of residual stresses, dislocation density and texture in Zr-bonded U-10Mo “mini” fuel foils and plates

    DOE PAGES

    Brown, Donald William; Okuniewski, Maria A.; Sisneros, Thomas A.; ...

    2016-12-01

    Here, Al clad U-10Mo fuel plates are being considered for conversion of several research reactors from high-enriched to low-enriched U fuel. Neutron diffraction measurements of the textures, residual phase stresses, and dislocation densities in the individual phases of the mini-foils throughout several processing steps and following hot-isostatic pressing to the Al cladding, have been completed. Recovery and recrystallization of the bare U-10Mo fuel foil, as indicated by the dislocation density and texture, are observed depending on the state of the material prior to annealing and the duration and temperature of the annealing process. In general, the cladding procedure significantly reducesmore » the dislocation density, but the final state of the clad plate, both texture and dislocation density, depends strongly on the final processing step of the fuel foil. In contrast, the residual stress state of the final plate is dominated by the thermal expansion mismatch of the constituent materials.« less

  12. X-Ray and Neutron Diffraction Measurements of Dislocation Density and Subgrain Size in a Friction-Stir-Welded Aluminum Alloy

    SciTech Connect

    Woo, Wan Chuck; Ungar, Prof Tomas; Feng, Zhili; Kenik, Edward A; Clausen, B

    2009-01-01

    The dislocation density and subgrain size were determined in the base material and friction-stir welds of 6061-T6 aluminum alloy. High-resolution X-ray diffraction measurement was performed in the base material. The result of the line profile analysis of the X-ray diffraction peak shows that the dislocation density is about 4.5 x 10{sup 14} m{sup -2} and the subgrain size is about 200 nm. Meanwhile, neutron diffraction measurements have been performed to observe the diffraction peaks during friction-stir welding (FSW). The deep penetration capability of the neutron enables us to measure the peaks from the midplane of the Al plate underneath the tool shoulder of the friction-stir welds. The peak broadening analysis result using the Williamson-Hall method shows the dislocation density of about 3.2 x 10{sup 15} m{sup -2} and subgrain size of about 160 nm. The significant increase of the dislocation density is likely due to the severe plastic deformation during FSW. This study provides an insight into understanding the transient behavior of the microstructure under severe thermomechanical deformation.

  13. Impact of d -band filling on the dislocation properties of bcc transition metals: The case of tantalum-tungsten alloys investigated by density-functional theory

    NASA Astrophysics Data System (ADS)

    Li, Hong; Draxl, Claudia; Wurster, Stefan; Pippan, Reinhard; Romaner, Lorenz

    2017-03-01

    We address the impact of tantalum alloying on dislocation properties of tungsten. To that aim, we calculate elastic constants, atomic-row displacement energy, dislocation core energy, and Peierls stress for different degrees of alloying within the framework of density-functional theory. We show that the elastic shear constants decrease monotonously with Ta content. Conversely, atomic-row displacement energy and, consequently, core energy and Peierls stress show a nonmonotonous behavior. These quantities peak at 25 at% Ta, indicating a tendency for embrittlement of W at such alloying concentrations. Our findings are in agreement with the experimental literature.

  14. Reduced dislocation density in GaxIn1–xP compositionally graded buffer layers through engineered glide plane switch

    SciTech Connect

    Schulte, Kevin L.; France, Ryan M.; McMahon, William E.; Norman, Andrew G.; Guthrey, Harvey L.; Geisz, John F.

    2016-11-17

    In this work we develop control over dislocation glide dynamics in GaxIn1-xP compositionally graded buffer layers (CGBs) through control of CuPt ordering on the group-III sublattice. The ordered structure is metastable in the bulk, so any glissile dislocation that disrupts the ordered pattern will release stored energy, and experience an increased glide force. Here we show how this connection between atomic ordering and dislocation glide force can be exploited to control the threading dislocation density (TDD) in GaxIn1-xP CGBs. When ordered GaxIn1-xP is graded from the GaAs lattice constant to InP, the order parameter ..eta.. decreases as x decreases, and dislocation glide switches from one set of glide planes to the other. This glide plane switch (GPS) is accompanied by the nucleation of dislocations on the new glide plane, which typically leads to increased TDD. We develop control of the GPS position within a GaxIn1-xP CGB through manipulation of deposition temperature, surfactant concentration, and strain-grading rate. We demonstrate a two-stage GaxIn1-xP CGB from GaAs to InP with sufficiently low TDD for high performance devices, such as the 4-junction inverted metamorphic multi-junction solar cell, achieved through careful control the GPS position. Here, experimental results are analyzed within the context of a model that considers the force balance on dislocations on the two competing glide planes as a function of the degree of ordering.

  15. Reduced dislocation density in GaxIn1–xP compositionally graded buffer layers through engineered glide plane switch

    DOE PAGES

    Schulte, Kevin L.; France, Ryan M.; McMahon, William E.; ...

    2016-11-17

    In this work we develop control over dislocation glide dynamics in GaxIn1-xP compositionally graded buffer layers (CGBs) through control of CuPt ordering on the group-III sublattice. The ordered structure is metastable in the bulk, so any glissile dislocation that disrupts the ordered pattern will release stored energy, and experience an increased glide force. Here we show how this connection between atomic ordering and dislocation glide force can be exploited to control the threading dislocation density (TDD) in GaxIn1-xP CGBs. When ordered GaxIn1-xP is graded from the GaAs lattice constant to InP, the order parameter ..eta.. decreases as x decreases, andmore » dislocation glide switches from one set of glide planes to the other. This glide plane switch (GPS) is accompanied by the nucleation of dislocations on the new glide plane, which typically leads to increased TDD. We develop control of the GPS position within a GaxIn1-xP CGB through manipulation of deposition temperature, surfactant concentration, and strain-grading rate. We demonstrate a two-stage GaxIn1-xP CGB from GaAs to InP with sufficiently low TDD for high performance devices, such as the 4-junction inverted metamorphic multi-junction solar cell, achieved through careful control the GPS position. Here, experimental results are analyzed within the context of a model that considers the force balance on dislocations on the two competing glide planes as a function of the degree of ordering.« less

  16. Dislocation-Based Si-Nanodevices

    NASA Astrophysics Data System (ADS)

    Reiche, Manfred; Kittler, Martin; Buca, Dan; Hähnel, Angelika; Zhao, Qing-Tai; Mantl, Siegfried; Gösele, Ulrich

    2010-04-01

    The realization of defined dislocation networks by hydrophobic wafer bonding allows the electrical characterization of individual dislocations. The present paper investigates the properties of such dislocations in samples containing high dislocations densities down to only six dislocations. The current induced by a single dislocation is determined by extrapolation of the current measured for various dislocation densities. Based on our present and previously reported analyses the electronic properties of individual dislocations can be inferred. The investigations show that dislocations in the channel of metal-oxide-semiconductor field-effect transistors (MOSFETs) result in increasing drain currents even at low drain and gate voltages. Because a maximum increase of the current is obtained if a single dislocation is present in the channel, arrays of MOSFETs each containing only one dislocation could be realized on the nanometer scale. The distance of the dislocations can be well controlled by wafer bonding techniques.

  17. Luminescence properties of defects in GaN

    NASA Astrophysics Data System (ADS)

    Reshchikov, Michael A.; Morkoç, Hadis

    2005-03-01

    Gallium nitride (GaN) and its allied binaries InN and AIN as well as their ternary compounds have gained an unprecedented attention due to their wide-ranging applications encompassing green, blue, violet, and ultraviolet (UV) emitters and detectors (in photon ranges inaccessible by other semiconductors) and high-power amplifiers. However, even the best of the three binaries, GaN, contains many structural and point defects caused to a large extent by lattice and stacking mismatch with substrates. These defects notably affect the electrical and optical properties of the host material and can seriously degrade the performance and reliability of devices made based on these nitride semiconductors. Even though GaN broke the long-standing paradigm that high density of dislocations precludes acceptable device performance, point defects have taken the center stage as they exacerbate efforts to increase the efficiency of emitters, increase laser operation lifetime, and lead to anomalies in electronic devices. The point defects include native isolated defects (vacancies, interstitial, and antisites), intentional or unintentional impurities, as well as complexes involving different combinations of the isolated defects. Further improvements in device performance and longevity hinge on an in-depth understanding of point defects and their reduction. In this review a comprehensive and critical analysis of point defects in GaN, particularly their manifestation in luminescence, is presented. In addition to a comprehensive analysis of native point defects, the signatures of intentionally and unintentionally introduced impurities are addressed. The review discusses in detail the characteristics and the origin of the major luminescence bands including the ultraviolet, blue, green, yellow, and red bands in undoped GaN. The effects of important group-II impurities, such as Zn and Mg on the photoluminescence of GaN, are treated in detail. Similarly, but to a lesser extent, the effects of

  18. Dislocation density and strain-relaxation in Ge1-xSnx layers grown on Ge/Si (0 0 1) by low-temperature molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Khiangte, Krista R.; Rathore, Jaswant S.; Sharma, Vaibhav; Bhunia, Swagata; Das, Sudipta; Fandan, Rajveer S.; Pokharia, Ravinder S.; Laha, Apurba; Mahapatra, Suddhasatta

    2017-07-01

    The density and origin of dislocations in a variety of molecular-beam-epitaxy-(MBE)-grown Ge1-xSnx/Ge/Si (0 0 1) heterostructures, with Sn-content varying from 0.4 to 5.2%, have been investigated systematically by high resolution X-ray diffraction (HRXRD). In particular, using the approach due to Kaganer et al. (V.M. Kaganer et al., Phys. Rev. B 72, 045423 (2005)) for the first time to the Ge1-xSnx alloy, it is demonstrated that reliable estimates of both edge and screw dislocation densities can be obtained from HRXRD data. Based on the correlations of strain relaxation and dislocation densities of the alloy epilayers and the underlying Ge buffer layers, we observe that dislocations threading from the latter predominantly contribute to the strain relaxation of the former. Thus, Ge1-xSnx epilayers of sub-critical thicknesses can be made to relax significantly by growing them on partially-relaxed, relatively-thin Ge buffer layers. This may be promising for the realization of Ge1-xSnx epilayers with direct electronic band gap.

  19. Si Complies with GaN to Overcome Thermal Mismatches for the Heteroepitaxy of Thick GaN on Si.

    PubMed

    Tanaka, Atsunori; Choi, Woojin; Chen, Renjie; Dayeh, Shadi A

    2017-08-21

    Heteroepitaxial growth of lattice mismatched materials has advanced through the epitaxy of thin coherently strained layers, the strain sharing in virtual and nanoscale substrates, and the growth of thick films with intermediate strain-relaxed buffer layers. However, the thermal mismatch is not completely resolved in highly mismatched systems such as in GaN-on-Si. Here, geometrical effects and surface faceting to dilate thermal stresses at the surface of selectively grown epitaxial GaN layers on Si are exploited. The growth of thick (19 µm), crack-free, and pure GaN layers on Si with the lowest threading dislocation density of 1.1 × 10(7) cm(-2) achieved to date in GaN-on-Si is demonstrated. With these advances, the first vertical GaN metal-insulator-semiconductor field-effect transistors on Si substrates with low leakage currents and high on/off ratios paving the way for a cost-effective high power device paradigm on an Si CMOS platform are demonstrated. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  20. Dislocation-related trap levels in nitride-based light emitting diodes

    SciTech Connect

    Venturi, Giulia; Castaldini, Antonio; Cavallini, Anna

    2014-05-26

    Deep level transient spectroscopy was performed on InGaN/GaN multiple quantum well light emitting diodes (LEDs) in order to determine the effect of the dislocation density on the deep intragap electronic levels. The LEDs were grown by metalorganic vapor phase epitaxy on GaN templates with a high dislocation density of 8 × 10{sup 9} cm{sup −2} and a low dislocation density of 3 × 10{sup 8} cm{sup −2}. Three trapping levels for electrons were revealed, named A, A1, and B, with energies E{sub A} ≈ 0.04 eV, E{sub A1} ≈ 0.13 eV, and E{sub B} ≈ 0.54 eV, respectively. The trapping level A has a much higher concentration in the LEDs grown on the template with a high density of dislocations. The logarithmic dependence of the peak amplitude on the bias pulse width for traps A and A1 identifies the defects responsible for these traps as associated with linearly arranged defects. We conclude that traps A and A1 are dislocation-related intragap energy levels.

  1. Quantitative Comparison Between Dislocation Densities in Offcut 4H-SiC Wafers Measured Using Synchrotron X-ray Topography and Molten KOH Etching

    NASA Astrophysics Data System (ADS)

    Wang, Huanhuan; Sun, Shun; Dudley, Michael; Byrappa, Shayan; Wu, Fangzhen; Raghothamachar, Balaji; Chung, Gil; Sanchez, Edward K.; Mueller, Stephan G.; Hansen, Darren; Loboda, Mark J.

    2013-05-01

    Molten KOH etching and x-ray topography have been well established as two of the major characterization techniques used for observing as well as analyzing the various crystallographic defects in both substrates and homoepitaxial layers of silicon carbide. Regarding assessment of dislocation density in commercial wafers, though the two techniques show good consistency in threading dislocation density analysis, significant discrepancy is found in the case of basal plane dislocations (BPDs). In this paper we compare measurements of BPD densities in 4-inch 4H-SiC commercial wafers assessed using both etching and topography methods. The ratio of the BPD density calculated from topographic images to that from etch pits is estimated to be larger than 1/sin θ, where θ is the offcut angle of the wafer. Based on the orientations of the defects in the wafers, a theoretical model is put forward to explain this disparity and two main sources of errors in assessing the BPD density using chemical etching are discussed.

  2. Reduction of threading dislocation density for AlN epilayer via a highly compressive-stressed buffer layer

    NASA Astrophysics Data System (ADS)

    Huang, Jun; Niu, Mu Tong; Zhang, Ji Cai; Wang, Wei; wang, Jian Feng; Xu, Ke

    2017-02-01

    Crystalline qualities of three AlN films grown by cold-wall high temperature hydride vapor phase epitaxy (CW-HT-HVPE) on c-plane sapphire substrates, with different AlN buffer layers (BLs) deposited either by CW-HT-HVPE or by hot-wall low temperature hydride vapor phase epitaxy (HW-LT-HVPE), have been studied. The best film quality was obtained on a 500-nm-thick AlN BL grown by HW-LT-HVPE at 1000 ℃. In this case,the AlN epilayer has the lowest full-width at half-maximum (FWHM) values of the (0002) and (10-12) x-ray rocking curve peaks of 295 and 306 arcsec, respectively, corresponding to the screw and edge threading dislocation (TD) densities of 1.9×108 cm-2 and 5.2×108 cm-2. This improvement in crystal quality of the AlN film can be attributed to the high compressive-stress of BL grown by HW-LT-HVPE,which facilitate the inclination and annihilation of TDs.

  3. Optical and Structural Properties of Microcrystalline GaN on an Amorphous Substrate Prepared by a Combination of Molecular Beam Epitaxy and Metal-Organic Chemical Vapor Deposition

    SciTech Connect

    Min, Jung-Wook; Hwang, Hyeong-Yong; Kang, Eun-Kyu; Park, Kwangwook; Kim, Ci-Hyun; Lee, Dong-Seon; Jho, Young-Dahl; Bae, Si-Young; Lee, Yong-Tak

    2016-05-01

    Microscale platelet-shaped GaN grains were grown on amorphous substrates by a combined epitaxial growth method of molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD). First, MBE GaN was grown on an amorphous substrate as a pre-orienting layer and its structural properties were investigated. Second, MOCVD grown GaN samples using the different growth techniques of planar and selective area growth (SAG) were comparatively investigated by transmission electron microscopy (TEM), cathodoluminescence (CL), and photoluminescence (PL). In MOCVD planar GaN, strong bound exciton peaks dominated despite the high density of the threading dislocations (TDs). In MOCVD SAG GaN, on the other hand, TDs were clearly reduced with bending, but basal stacking fault (BSF) PL peaks were observed at 3.42 eV. The combined epitaxial method not only provides a deep understanding of the growth behavior but also suggests an alternative approach for the growth of GaN on amorphous substances.

  4. Optical and structural properties of microcrystalline GaN on an amorphous substrate prepared by a combination of molecular beam epitaxy and metal-organic chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Min, Jung-Wook; Hwang, Hyeong-Yong; Kang, Eun-Kyu; Park, Kwangwook; Kim, Ci-Hyun; Lee, Dong-Seon; Jho, Young-Dahl; Bae, Si-Young; Lee, Yong-Tak

    2016-05-01

    Microscale platelet-shaped GaN grains were grown on amorphous substrates by a combined epitaxial growth method of molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD). First, MBE GaN was grown on an amorphous substrate as a pre-orienting layer and its structural properties were investigated. Second, MOCVD grown GaN samples using the different growth techniques of planar and selective area growth (SAG) were comparatively investigated by transmission electron microscopy (TEM), cathodoluminescence (CL), and photoluminescence (PL). In MOCVD planar GaN, strong bound exciton peaks dominated despite the high density of the threading dislocations (TDs). In MOCVD SAG GaN, on the other hand, TDs were clearly reduced with bending, but basal stacking fault (BSF) PL peaks were observed at 3.42 eV. The combined epitaxial method not only provides a deep understanding of the growth behavior but also suggests an alternative approach for the growth of GaN on amorphous substances.

  5. Low-temperature growth of AlN and GaN by metal organic vapor phase epitaxy for polarization engineered water splitting photocathode

    NASA Astrophysics Data System (ADS)

    Nakamura, Akihiro; Suzuki, Michihiro; Fujii, Katsushi; Nakano, Yoshiaki; Sugiyama, Masakazu

    2017-04-01

    Crystal properties of low-temperature grown AlN (LT-AlN) combined with low temperature GaN (LT-GaN) grown by metal organic vapor phase epitaxy (MOVPE) were investigated to obtain a high quality GaN/AlN/GaN structure with a few-nm-thick AlN layer. LT-AlN suppresses unintentional Ga incorporation and can be pseudomorphically grown on GaN with a relatively smooth surface morphology. The lattice of LT-AlN coherent to GaN, however, was found to relax after reactor conditions were changed to grow the subsequent GaN layer at higher temperature. The top GaN layer grown on the relaxed LT-AlN, thus, exhibited a rough surface morphology and a threading dislocation density (TDD) higher than 109 cm-2 estimated from an X-ray diffraction measurement. An LT-GaN capping layer was found to be highly effective for avoiding such lattice relaxation of LT-AlN. The combination of LT-AlN and LT-GaN enables us to obtain a GaN/AlN/GaN junction with high Al content, a low TDD, and abrupt interfaces. As a result, introducing an LT-GaN layer improved the photoelectrochemical (PEC) property of a polarization engineered un-doped GaN/AlN/n-type GaN (u-GaN/AlN/n-GaN) photocathode for water splitting.

  6. Dependence of adhesion strength between GaN LEDs and sapphire substrate on power density of UV laser irradiation

    NASA Astrophysics Data System (ADS)

    Park, Junsu; Sin, Young-Gwan; Kim, Jae-Hyun; Kim, Jaegu

    2016-10-01

    Selective laser lift-off (SLLO) is an innovative technology used to manufacture and repair micro-light-emitting diode (LED) displays. In SLLO, laser is irradiated to selectively separate micro-LED devices from a transparent sapphire substrate. The light source used is an ultraviolet (UV) laser with a wavelength of 266 nm, pulse duration of 20 ns, and repetition rate of 30 kHz. Controlled adhesion between a LED and the substrate is key for a SLLO process with high yield and reliability. This study examined the fundamental relationship between adhesion and laser irradiation. Two competing mechanisms affect adhesion at the irradiated interface between the GaN LED and sapphire substrate: Ga precipitation caused by the thermal decomposition of GaN and roughened interface caused by thermal damage on the sapphire. The competition between these two mechanisms leads to a non-trivial SLLO condition that needs optimization. This study helps understand the SLLO process, and accelerate the development of a process for manufacturing micro-LED displays via SLLO for future applications.

  7. Kneecap dislocation

    MedlinePlus

    Use proper techniques when exercising or playing sports. Keep your knee strong and flexible. Some cases of knee dislocation may not be preventable, especially if physical factors make you more likely to dislocate your knee.

  8. Supersonic Dislocation Bursts in Silicon

    DOE PAGES

    Hahn, E. N.; Zhao, S.; Bringa, E. M.; ...

    2016-06-06

    Dislocations are the primary agents of permanent deformation in crystalline solids. Since the theoretical prediction of supersonic dislocations over half a century ago, there is a dearth of experimental evidence supporting their existence. Here we use non-equilibrium molecular dynamics simulations of shocked silicon to reveal transient supersonic partial dislocation motion at approximately 15 km/s, faster than any previous in-silico observation. Homogeneous dislocation nucleation occurs near the shock front and supersonic dislocation motion lasts just fractions of picoseconds before the dislocations catch the shock front and decelerate back to the elastic wave speed. Applying a modified analytical equation for dislocation evolutionmore » we successfully predict a dislocation density of 1.5 x 10(12) cm(-2) within the shocked volume, in agreement with the present simulations and realistic in regards to prior and on-going recovery experiments in silicon.« less

  9. Supersonic Dislocation Bursts in Silicon

    SciTech Connect

    Hahn, E. N.; Zhao, S.; Bringa, E. M.; Meyers, M. A.

    2016-06-06

    Dislocations are the primary agents of permanent deformation in crystalline solids. Since the theoretical prediction of supersonic dislocations over half a century ago, there is a dearth of experimental evidence supporting their existence. Here we use non-equilibrium molecular dynamics simulations of shocked silicon to reveal transient supersonic partial dislocation motion at approximately 15 km/s, faster than any previous in-silico observation. Homogeneous dislocation nucleation occurs near the shock front and supersonic dislocation motion lasts just fractions of picoseconds before the dislocations catch the shock front and decelerate back to the elastic wave speed. Applying a modified analytical equation for dislocation evolution we successfully predict a dislocation density of 1.5 x 10(12) cm(-2) within the shocked volume, in agreement with the present simulations and realistic in regards to prior and on-going recovery experiments in silicon.

  10. Supersonic Dislocation Bursts in Silicon

    NASA Astrophysics Data System (ADS)

    Hahn, E. N.; Zhao, S.; Bringa, E. M.; Meyers, M. A.

    2016-06-01

    Dislocations are the primary agents of permanent deformation in crystalline solids. Since the theoretical prediction of supersonic dislocations over half a century ago, there is a dearth of experimental evidence supporting their existence. Here we use non-equilibrium molecular dynamics simulations of shocked silicon to reveal transient supersonic partial dislocation motion at approximately 15 km/s, faster than any previous in-silico observation. Homogeneous dislocation nucleation occurs near the shock front and supersonic dislocation motion lasts just fractions of picoseconds before the dislocations catch the shock front and decelerate back to the elastic wave speed. Applying a modified analytical equation for dislocation evolution we successfully predict a dislocation density of 1.5 × 1012 cm-2 within the shocked volume, in agreement with the present simulations and realistic in regards to prior and on-going recovery experiments in silicon.

  11. Structural anisotropic properties of a-plane GaN epilayers grown on r-plane sapphire by molecular beam epitaxy

    SciTech Connect

    Lotsari, A.; Kehagias, Th.; Katsikini, M.; Arvanitidis, J.; Ves, S.; Komninou, Ph.; Dimitrakopulos, G. P.; Tsiakatouras, G.; Tsagaraki, K.; Georgakilas, A.; Christofilos, D.

    2014-06-07

    Heteroepitaxial non-polar III-Nitride layers may exhibit extensive anisotropy in the surface morphology and the epilayer microstructure along distinct in-plane directions. The structural anisotropy, evidenced by the “M”-shape dependence of the (112{sup ¯}0) x-ray rocking curve widths on the beam azimuth angle, was studied by combining transmission electron microscopy observations, Raman spectroscopy, high resolution x-ray diffraction, and atomic force microscopy in a-plane GaN epilayers grown on r-plane sapphire substrates by plasma-assisted molecular beam epitaxy (PAMBE). The structural anisotropic behavior was attributed quantitatively to the high dislocation densities, particularly the Frank-Shockley partial dislocations that delimit the I{sub 1} intrinsic basal stacking faults, and to the concomitant plastic strain relaxation. On the other hand, isotropic samples exhibited lower dislocation densities and a biaxial residual stress state. For PAMBE growth, the anisotropy was correlated to N-rich (or Ga-poor) conditions on the surface during growth, that result in formation of asymmetric a-plane GaN grains elongated along the c-axis. Such conditions enhance the anisotropy of gallium diffusion on the surface and reduce the GaN nucleation rate.

  12. Numerical analysis of thermal stress and dislocation density distributions in large size multi-crystalline silicon ingots during the seeded growth process

    NASA Astrophysics Data System (ADS)

    Nguyen, Thi Hoai Thu; Chen, Jyh-Chen; Hu, Chieh; Chen, Chun-Hung; Huang, Yen-Hao; Lin, Huang-Wei; Yu, Andy; Hsu, Bruce

    2017-06-01

    In this study, a global transient numerical simulation of silicon growth from the beginning of the solidification process until the end of the cooling process is carried out modeling the growth of an 800 kg ingot in an industrial seeded directional solidification furnace. The standard furnace is modified by the addition of insulating blocks in the hot zone. The simulation results show that there is a significant decrease in the thermal stress and dislocation density in the modified model as compared to the standard one (a maximal decrease of 23% and 75% along the center line of ingot for thermal stress and dislocation density, respectively). This modification reduces the heating power consumption for solidification of the silicon melt by about 17% and shortens the growth time by about 2.5 h. Moreover, it is found that adjusting the operating conditions of modified model to obtain the lower growth rate during the early stages of the solidification process can lower dislocation density and total heater power.

  13. Nondestructive Characterization of Residual Threading Dislocation Density in HgCdTe Layers Grown on CdZnTe by Liquid-Phase Epitaxy

    NASA Astrophysics Data System (ADS)

    Fourreau, Y.; Pantzas, K.; Patriarche, G.; Destefanis, V.

    2016-09-01

    The performance of mercury cadmium telluride (MCT)-based infrared (IR) focal-plane arrays is closely related to the crystalline perfection of the HgCdTe thin film. In this work, Te-rich, (111)B-oriented HgCdTe epilayers grown by liquid-phase epitaxy on CdZnTe substrates have been studied. Surface atomic steps are shown on as-grown MCT materials using atomic force microscopy (AFM) and white-light interferometry (WLI), suggesting step-flow growth. Locally, quasiperfect surface spirals are also evidenced. A demonstration is given that these spirals are related to the emergence of almost pure screw threading dislocations. A nondestructive and quantitative technique to measure the threading dislocation density is proposed. The technique consists of counting the surface spirals on the as-grown MCT surface from images obtained by either AFM or WLI measurements. The benefits and drawbacks of both destructive—chemical etching of HgCdTe dislocations—and nondestructive surface imaging techniques are compared. The nature of defects is also discussed. Finally, state-of-the-art threading dislocation densities in the low 104 cm-2 range are evidenced by both etch pit density (EPD) and surface imaging measurements.

  14. Growth and structure of GaN layers on silicon carbide synthesized on a Si substrate by the substitution of atoms: A model of the formation of V-defects during the growth of GaN

    NASA Astrophysics Data System (ADS)

    Kukushkin, S. A.; Osipov, A. V.; Rozhavskaya, M. M.; Myasoedov, A. V.; Troshkov, S. I.; Lundin, V. V.; Sorokin, L. M.; Tsatsul'nikov, A. F.

    2015-09-01

    This paper presents the results of the electron microscopic study of GaN/AlGaN/AlN/SiC/Si(111) structures grown by the metal-organic vapor phase epitaxy. A SiC epitaxial buffer nanolayer has been grown by a new method of substitution of atoms on the Si(111) substrate. It has been found that there is a strong dependence of the density of dislocations and V-defects on the synthesis conditions of SiC and the thickness of the AlN layer. It has been proved experimentally that the creation of a low-temperature AlN insert with a simultaneous decrease in the thickness of the AlN layer to values of no more than 50 nm makes it possible to almost completely prevent the formation of V-defects in the GaN layer. The density of screw and mixed dislocations in the GaN layer of the studied samples lies in the range from 5 × 109 to 1 × 1010 cm-2. A theoretical model of the formation of V-defects during the growth of GaN has been developed.

  15. Quantum efficiency affected by localized carrier distribution near the V-defect in GaN based quantum well

    SciTech Connect

    Cho, Yong-Hee Shim, Mun-Bo; Hwang, Sangheum; Kim, Sungjin; Kim, Jun-Youn; Kim, Jaekyun; Park, Young-Soo; Park, Seoung-Hwan

    2013-12-23

    It is known that due to the formation of in-plane local energy barrier, V-defects can screen the carriers which non-radiatively recombine in threading dislocations (TDs) and hence, enhance the internal quantum efficiency in GaN based light-emitting diodes. By a theoretical modeling capable of describing the inhomogeneous carrier distribution near the V-defect in GaN based quantum wells, we show that the efficient suppression of non-radiative (NR) recombination via TD requires the local energy barrier height of V-defect larger than ∼80 meV. The NR process in TD combined with V-defect influences the quantum efficiency mainly in the low injection current density regime suitably described by the linear dependence of carrier density. We provide a simple phenomenological expression for the NR recombination rate based on the model result.

  16. NpN-GaN/InxGa1-xN/GaN heterojunction bipolar transistor on free-standing GaN substrate

    NASA Astrophysics Data System (ADS)

    Lochner, Zachary; Jin Kim, Hee; Lee, Yi-Che; Zhang, Yun; Choi, Suk; Shen, Shyh-Chiang; Doug Yoder, P.; Ryou, Jae-Hyun; Dupuis, Russell D.

    2011-11-01

    Data and analysis are presented for NpN-GaN/InGaN/GaN double-heterojunction bipolar transistors (HBTs) grown and fabricated on a free-standing GaN (FS-GaN) substrate in comparison to that on a sapphire substrate to investigate the effect of dislocations in III-nitride HBT epitaxial structures. The performance characteristics of HBTs on FS-GaN exhibit a maximum collector current density of ˜12.3 kA/cm2, dc current gain of ˜90, and maximum differential gain of ˜120 without surface passivation, representing a substantial improvement over similar devices grown on sapphire. This is attributed to the reduction in threading dislocation density afforded by using a homoepitaxial growth on a high-crystalline-quality substrate. The minority carrier diffusion length increases significantly owing to not only a mitigated carrier trap effect via fewer dislocations, but also possibly reduced microscopic localized states.

  17. Coupling the Phase Field Method for diffusive transformations with dislocation density-based crystal plasticity: Application to Ni-based superalloys

    NASA Astrophysics Data System (ADS)

    Cottura, M.; Appolaire, B.; Finel, A.; Le Bouar, Y.

    2016-09-01

    A phase field model is coupled to strain gradient crystal plasticity based on dislocation densities. The resulting model includes anisotropic plasticity and the size-dependence of plastic activity, required when plasticity is confined in region below few microns in size. These two features are important for handling microstructure evolutions during diffusive phase transformations that involve plastic deformation occurring in confined areas such as Ni-based superalloys undergoing rafting. The model also uses a storage-recovery law for the evolution of the dislocation density of each glide system and a hardening matrix to account for the short-range interactions between dislocations. First, it is shown that the unstable modes during the morphological destabilization of a growing misfitting circular precipitate are selected by the anisotropy of plasticity. Then, the rafting of γ‧ precipitates in a Ni-based superalloy is investigated during [100] creep loadings. Our model includes most of the important physical phenomena accounted for during the microstructure evolution, such as the presence of different crystallographic γ‧ variants, their misfit with the γ matrix, the elastic inhomogeneity and anisotropy, the hardening, anisotropy and viscosity of plasticity. In agreement with experiments, the model predicts that rafting proceeds perpendicularly to the tensile loading axis and it is shown that plasticity slows down significantly the evolution of the rafts.

  18. Influence of dislocation density on carrier injection in InGaN/GaN light-emitting diodes operated with alternating current

    NASA Astrophysics Data System (ADS)

    Lee, Dong-Yul; Han, Sang-Heon; Ju Lee, Dong; Wook Lee, Jeong; Kim, Dong-Joon; Sun Kim, Young; Kim, Sung-Tae; Leem, Jae-Young

    2013-01-01

    The frequency dependence of current spreading and light output power (LOP) was investigated for InGaN/GaN light-emitting diodes (LEDs) grown on n-GaN templates with different threading dislocation densities (TDDs) that were operated using alternating-current (AC). By comparison with LEDs with low TDDs, the LEDs with high TDDs showed a strong frequency dependence for both current spreading and LOP during high-frequency AC operation. The results were attributed to a weak carrier injection into InGaN quantum wells (QWs) during high frequency AC operation, which resulted from the suppression of carrier transport induced by the carrier scattering around negatively charged dislocation cores.

  19. Growth and characteristics of self-assembly defect-free GaN surface islands by molecular beam epitaxy.

    PubMed

    Hsu, Kuang-Yuan; Wang, Cheng-Yu; Liu, Chuan-Pu

    2011-04-01

    GaN surface nano-islands of high crystal quality, without any dislocations or other extended defects, are grown on a c-plane sapphire substrate by plasma-assisted molecular beam epitaxy. Nano-island growth requires special conditions in terms of V/III ratio and substrate temperature, distinct from either film or nanocolumn growth. The insertion of a nitrided Ga layer can effectively improve the uniformity of the nano-islands in both shape and size. The islands are well faced truncated pyramids with island size ranged from 30 to 110 nm, and height ranged from 30 to 55 nm. On, the other hand, the density and facet of the GaN surface islands would be affected by the growth conditions. An increase of the V/III ratio from 30 to 40 led to an increase in density from 1.4 x 10(9) to 4.3 x 10(9) cm(-2) and an evolution from {1-21-1} facets to {1-21-2} facets. The GaN layers containing the surface islands can moderate the compressive strain due to the lattice and thermal mismatch between GaN and c-sapphire. Conductive atomic force microscopy shows that the off-axis sidewall facets are more electrically active than those at the island center. The formation of the GaN surface islands is strongly induced by the Ehrlich-Schwoebel barrier effect of preexisting islands grown in the early growth stage. GaN surface islands are ideal templates for growing nano-devices.

  20. Electron beam induced current study of minority carrier diffusion length in homoepitaxial GaN (Conference Presentation)

    NASA Astrophysics Data System (ADS)

    Talin, A. Alec; Collins, Kimberlee C.; Armstrong, Andrew M.; Allerman, Andrew A.; Léonard, François

    2016-09-01

    GaN is a promising material for a range of high power, high frequency, and high temperature device applications. The wide bandgap of GaN leads to high breakdown voltages and low switching losses. Recently, large HVPE grown GaN substrates have become available for homoepitaxial growth leading to 103 reduction in dislocation density compared to similarly grown heteroepitaxial films. Device performance, however, is ultimately limited by the transport properties of minority carriers. Measured values for minority carrier diffusion lengths and lifetimes in GaN vary widely1-3, and a recent report suggests flaws in the commonly adopted electron beam induced current (EBIC) method in the planar-collection geometry.1 Here we report on EBIC measurements performed on 8 micrometer thick GaN grown by MOCVD on 2 inch GaN substrates with a n-type dopant density of 5×1016 cm-3. We determine the carrier diffusion length using both the conventional EBIC method by varying the electron beam-to-contact lateral distance as well as by varying the electron beam penetration depth and find the extracted values differ by 10×, with the latter technique yielding the lower diffusion length. We rationalize these results in light of other materials characteristics including Raman and photoluminescence. Sandia National Laboratories is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the U.S. Department of Energy's National Nuclear Security Administration under contract DE-AC04-94AL85000.

  1. Defect reduction in (112_O) a-plane GaN by two-stage epitaxiallateral overgrowth

    SciTech Connect

    Ni, X.; Ozgur, U.; Fu, Y.; Biyikli, N.; Xie, J.; Baski, A.A.; Morkoc, H.; Liliental-Weber, Z.

    2006-10-20

    In the epitaxial lateral overgrowth (ELO) of (11{bar 2}0) a-plane GaN, the uneven growth rates of two opposing wings, Ga- and N-wings, makes the coalescence of two neighboring wings more difficult than that in c-plane GaN. We report a two-stage growth method to get uniformly coalesced epitaxial lateral overgrown a-plane GaN using metalorganic chemical vapor deposition (MOCVD) by employing relatively lower growth temperature in the first step followed by enhanced lateral growth in the second. Using this method, the height differences between Ga-polar and N-polar wings at the coalescence front could be reduced, thereby making the coalescence of two wings much easier. Transmission electron microscopy (TEM) showed that the threading dislocation density in the wing areas was 1.0x10{sup 8}cm{sup -2}, more than two orders of magnitude lower than that in the window areas (4.2x10{sup 10}cm{sup -2}). However, high density of basal stacking faults of 1.2x104 cm-1 was still observed in the wing areas as compared to c-plane GaN. Atomic force microscopy and photoluminescence measurements on the coalesced ELO a-GaN sample also indicated improved material quality.

  2. Microstructure investigation of semi-polar (11-22) GaN overgrown on differently designed micro-rod array templates

    NASA Astrophysics Data System (ADS)

    Zhang, Y.; Bai, J.; Hou, Y.; Yu, X.; Gong, Y.; Smith, R. M.; Wang, T.

    2016-12-01

    In order to realize semi-polar (11-22) GaN based laser diodes grown on sapphire, it is necessary to further improve the crystal quality of the (11-22) GaN obtained by using our overgrowth approach developed on regularly arrayed micro-rod templates [T. Wang, Semicond. Sci. Technol. 31, 093003 (2016)]. This can be achieved by carefully designing micro-rod templates. Based on transmission electron microscopy and photoluminescence measurements, it has been found that the micro-rod diameter plays a vital role in effectively reducing both the dislocation density and the basal staking fault (BSF) density of the overgrown (11-22) GaN, but in different manners. The BSF density reduces monotonically with increasing the micro-rod diameter from 2 to 5 μm, and then starts to be saturated when the micro-rod diameter further increases. In contrast, the dislocation density reduces significantly when the micro-rod diameter increases from 2 to 4 μm, and then starts to increase when the diameter further increases to 5 μm. Furthermore, employing shorter micro-rods is useful for removing additional BSFs, leading to further improvement in crystal quality. The results presented provide a very promising approach to eventually achieving (11-22) semi-polar III-nitride laser diodes.

  3. Electron spin dynamics in cubic GaN

    NASA Astrophysics Data System (ADS)

    Buß, J. H.; Schupp, T.; As, D. J.; Brandt, O.; Hägele, D.; Rudolph, J.

    2016-12-01

    The electron spin dynamics in cubic GaN is comprehensively investigated by time-resolved magneto-optical Kerr-rotation spectroscopy over a wide range of temperatures, magnetic fields, and doping densities. The spin dynamics is found to be governed by the interplay of spin relaxation of localized electrons and Dyakonov-Perel relaxation of delocalized electrons. Localized electrons significantly contribute to spin relaxation up to room temperature at moderate doping levels, while Dyakonov-Perel relaxation dominates for high temperatures or degenerate doping levels. Quantitative agreement to Dyakonov-Perel theory requires a larger value of the spin-splitting constant than theoretically predicted. Possible reasons for this discrepancy are discussed, including the role of charged dislocations.

  4. Martensitic phase transition involving dislocations

    NASA Astrophysics Data System (ADS)

    Le, K. C.; Günther, C.

    2015-06-01

    A model of solid-solid phase transition involving dislocations in crystals is proposed within the nonlinear continuum dislocation theory (CDT). The co-existence of phases having piecewise constant plastic slip in laminates is possible for the two-well free energy density. The jumps of the plastic slip across the phase interfaces determine the surface dislocation densities at those incoherent boundaries. The number of phase interfaces should be determined by comparing the energy of dislocation arrays and the relaxed energy minimized among uniform plastic slips.

  5. Threading dislocation reduction in III-V films: Theoretical modeling and experimental methods

    NASA Astrophysics Data System (ADS)

    Mathis, Sheila Kathleen

    Heteroepitaxy remains the most efficient and successful way to integrate materials with the same crystal structure but different lattice constants and optoelectronic properties. The purpose of this work is to understand the processes of strain relaxation and subsequent threading dislocation (TD) reduction through modeling and experiment. The interpretation of these data is made according to a previously published model that is based on dislocation reactions. 1,2 These reactions are the sole mechanism for threading dislocation reduction in III--V epitaxial films.3 Gallium nitride, with no available substrate even close to the lattice-matched condition, has a unique microstructure that develops as a result of initial island growth. Dislocation densities on the order of 109--10 10/cm2 are routinely measured in GaN grown on sapphire. Dislocation reduction in these hexagonal films is extremely slow, and it is shown in Chapter II that film thicknesses on the order of a substrate thickness are required to reduce threading dislocation densities to a low (10 6/cm2) level. A model is developed to treat the reduction of TDs in (0001)-oriented films that explains the non-saturating TD density in GaN. Screw dislocation behavior is shown to strongly affect the dislocation density falloff with thickness. Threading dislocation reduction in low-temperature-grown GaAs (250--350°C) and InGaAs was known to be more efficient than in high-temperature-grown GaAs (580°C). Transmission electron microscopy (TEM) and X-ray diffraction (XRD) were used to study the microstructure of GaAs grown on InP substrates at temperatures between 250 and 580°C to determine the mechanism by which TD reduction was enhanced. While a high level of arsenic antisite defects [ASGa] may affect the TD density at temperatures below 300°C, they do not account for the improved dislocation reduction. When dislocations are generated at high temperature, the TD density on the (111)A and (111)B planes is asymmetric

  6. Low defect large area semi-polar (112) GaN grown on patterned (113) silicon

    PubMed Central

    Pristovsek, Markus; Han, Yisong; Zhu, Tongtong; Frentrup, Martin; Kappers, Menno J; Humphreys, Colin J; Kozlowski, Grzegorz; Maaskant, Pleun; Corbett, Brian

    2015-01-01

    We report on the growth of semi-polar GaN (112) templates on patterned Si (113) substrates. Trenches were etched in Si (113) using KOH to expose Si {111} sidewalls. Subsequently an AlN layer to prevent meltback etching, an AlGaN layer for stress management, and finally two GaN layers were deposited. Total thicknesses up to 5 m were realised without cracks in the layer. Transmission electron microscopy showed that most dislocations propagate along [0001] direction and hence can be covered by overgrowth from the next trench. The defect densities were below and stacking fault densities less than 100 cm . These numbers are similar to reports on patterned r-plane sapphire. Typical X-ray full width at half maximum (FHWM) were 500” for the asymmetric (00.6) and 450” for the (11.2) reflection. These FHWMs were 50 % broader than reported for patterned r-plane sapphire which is attributed to different defect structures and total thicknesses. The surface roughness shows strong variation on templates. For the final surface roughness the roughness of the sidewalls of the GaN ridges at the time of coalescence are critical. PMID:26212392

  7. Efficient reduction of defects in (1120) non-polar and (1122) semi-polar GaN grown on nanorod templates

    SciTech Connect

    Bai, J.; Gong, Y.; Xing, K.; Yu, X.; Wang, T.

    2013-03-11

    (1120) non-polar and (1122) semi-polar GaNs with a low defect density have been achieved by means of an overgrowth on nanorod templates, where a quick coalescence with a thickness even below 1 {mu}m occurs. On-axis and off-axis X-ray rocking curve measurements have shown a massive reduction in the linewidth for our overgrown GaN in comparison with standard GaN films grown on sapphire substrates. Transmission electron microscope observation demonstrates that the overgrowth on the nanorod templates takes advantage of an omni-directional growth around the sidewalls of the nanostructures. The dislocations redirect in basal planes during the overgrowth, leading to their annihilation and termination at voids formed due to a large lateral growth rate. In the non-polar GaN, the priority <0001> lateral growth from vertical sidewalls of nanorods allows basal plane stacking faults (BSFs) to be blocked in the nanorod gaps; while for semi-polar GaN, the propagation of BSFs starts to be impeded when the growth front is changed to be along inclined <0001> direction above the nanorods.

  8. Defect reduction in overgrown semi-polar (11-22) GaN on a regularly arrayed micro-rod array template

    SciTech Connect

    Zhang, Y.; Bai, J.; Hou, Y.; Smith, R. M.; Yu, X.; Gong, Y.; Wang, T.

    2016-02-15

    We demonstrate a great improvement in the crystal quality of our semi-polar (11-22) GaN overgrown on regularly arrayed micro-rod templates fabricated using a combination of industry-matched photolithography and dry-etching techniques. As a result of our micro-rod configuration specially designed, an intrinsic issue on the anisotropic growth rate which is a great challenge in conventional overgrowth technique for semi-polar GaN has been resolved. Transmission electron microscopy measurements show a different mechanism of defect reduction from conventional overgrowth techniques and also demonstrate major advantages of our approach. The dislocations existing in the GaN micro-rods are effectively blocked by both a SiO{sub 2} mask on the top of each GaN micro-rod and lateral growth along the c-direction, where the growth rate along the c-direction is faster than that along any other direction. Basal stacking faults (BSFs) are also effectively impeded, leading to a distribution of BSF-free regions periodically spaced by BSF regions along the [-1-123] direction, in which high and low BSF density areas further show a periodic distribution along the [1-100] direction. Furthermore, a defect reduction model is proposed for further improvement in the crystalline quality of overgrown (11-22) GaN on sapphire.

  9. Single-crystal N-polar GaN p-n diodes by plasma-assisted molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Cho, YongJin; Hu, Zongyang; Nomoto, Kazuki; Xing, Huili Grace; Jena, Debdeep

    2017-06-01

    N-polar GaN p-n diodes are realized on single-crystal N-polar GaN bulk wafers by plasma-assisted molecular beam epitaxy growth. The current-voltage characteristics show high-quality rectification and electroluminescence characteristics with a high on currents ˜10 kA/cm2, low off currents <10-5 A/cm2, on/off current ratio of >109, and interband photon emission. The measured electroluminescence spectrum is dominated by a strong near-band edge emission, while deep level luminescence is greatly suppressed. A very low dislocation density leads to a high reverse breakdown electric field of ˜2.2 MV/cm without fields plates—the highest reported for N-polar epitaxial structures. The low leakage current N-polar diodes open up several potential applications in polarization-engineered photonic and electronic devices.

  10. Growth modes of InN (000-1) on GaN buffer layers on sapphire

    NASA Astrophysics Data System (ADS)

    Liu, Bing; Kitajima, Takeshi; Chen, Dongxue; Leone, Stephen R.

    2005-03-01

    In this work, using atomic force microscopy and scanning tunneling microscopy, we study the surface morphologies of epitaxial InN films grown by plasma-assisted molecular beam epitaxy with intervening GaN buffer layers on sapphire substrates. On smooth GaN buffer layers, nucleation and evolution of three-dimensional InN islands at various coverages and growth temperatures are investigated. The shapes of the InN islands are observed to be predominantly mesalike with large flat (000-1) tops, which suggests a possible role of indium as a surfactant. Rough GaN buffer layers composed of dense small GaN islands are found to significantly improve uniform InN wetting of the substrates, on which atomically smooth InN films are obtained that show the characteristics of step-flow growth. Scanning tunneling microscopy imaging reveals the defect-mediated surface morphology of smooth InN films, including surface terminations of screw dislocations and a high density of shallow surface pits with depths less than 0.3 nm. The mechanisms of the three-dimensional island size and shape evolution and formation of defects on smooth surfaces are considered.

  11. Comprehensive study on initial thermal oxidation of GaN(0001) surface and subsequent oxide growth in dry oxygen ambient

    NASA Astrophysics Data System (ADS)

    Yamada, Takahiro; Ito, Joyo; Asahara, Ryohei; Watanabe, Kenta; Nozaki, Mikito; Nakazawa, Satoshi; Anda, Yoshiharu; Ishida, Masahiro; Ueda, Tetsuzo; Yoshigoe, Akitaka; Hosoi, Takuji; Shimura, Takayoshi; Watanabe, Heiji

    2017-01-01

    Initial oxidation of gallium nitride (GaN) (0001) epilayers and subsequent growth of thermal oxides in dry oxygen ambient were investigated by means of x-ray photoelectron spectroscopy, spectroscopic ellipsometry, atomic force microscopy, and x-ray diffraction measurements. It was found that initial oxide formation tends to saturate at temperatures below 800 °C, whereas the selective growth of small oxide grains proceeds at dislocations in the epilayers, followed by noticeable grain growth, leading to a rough surface morphology at higher oxidation temperatures. This indicates that oxide growth and its morphology are crucially dependent on the defect density in the GaN epilayers. Structural characterizations also reveal that polycrystalline α- and β-phase Ga2O3 grains in an epitaxial relation with the GaN substrate are formed from the initial stage of the oxide growth. We propose a comprehensive model for GaN oxidation mediated by nitrogen removal and mass transport and discuss the model on the basis of experimental findings.

  12. Three-Dimensional Hetero-Integration of Faceted GaN on Si Pillars for Efficient Light Energy Conversion Devices.

    PubMed

    Kim, Dong Rip; Lee, Chi Hwan; Cho, In Sun; Jang, Hanmin; Jeon, Min Soo; Zheng, Xiaolin

    2017-07-25

    An important pathway for cost-effective light energy conversion devices, such as solar cells and light emitting diodes, is to integrate III-V (e.g., GaN) materials on Si substrates. Such integration first necessitates growth of high crystalline III-V materials on Si, which has been the focus of many studies. However, the integration also requires that the final III-V/Si structure has a high light energy conversion efficiency. To accomplish these twin goals, we use single-crystalline microsized Si pillars as a seed layer to first grow faceted Si structures, which are then used for the heteroepitaxial growth of faceted GaN films. These faceted GaN films on Si have high crystallinity, and their threading dislocation density is similar to that of GaN grown on sapphire. In addition, the final faceted GaN/Si structure has great light absorption and extraction characteristics, leading to improved performance for GaN-on-Si light energy conversion devices.

  13. Influence of Oxygen Partial Pressure on Opto-Electrical Properties, Crystallite Size and Dislocation Density of Sn Doped In_2O_3 Nanostructures

    NASA Astrophysics Data System (ADS)

    Soleimanian, Vishtasb; Ghasemi Varnamkhasti, Mohsen

    2016-10-01

    In this research, high-quality Sn doped indium oxide (ITO) thin films were grown on glass slide substrates using an electron beam evaporation method. Vacuum chamber partial pressure was changed and the electro-optical as well as the microstructure parameters were investigated. The microstructure of prepared films was evaluated by x-ray diffraction analysis in terms of crystallite size and dislocation density. It was found that the best results [high transparency (88%) over the visible wavelength region, low sheet resistance of 12.8 Ω /square, the optical band gap of 3.76 eV, crystallite size of 49.5 nm and dislocation density of 1.42 × 10^{14} m^{-2}] were achieved for the sample produced at a partial pressure of 1 × 10^{-4} mbar. Therefore, one can successfully control the physical properties of ITO films by varying the oxygen content of the evaporation system. The correlation between the band gap and carrier concentration in addition to the average crystallite size of films was also established.

  14. Improvement of Crystalline Quality in GaN Films by Air-Bridged Lateral Epitaxial Growth

    NASA Astrophysics Data System (ADS)

    Kidoguchi, Isao; Ishibashi, Akihiko; Sugahara, Gaku; Tsujimura, Ayumu; Ban, Yuzaburoh

    2000-05-01

    Air-bridged lateral epitaxial growth (ABLEG), a new technique of lateral growth of GaN films, has been developed using low-pressure metalorganic vapor phase epitaxy. A previously grown 1-μm-thick GaN film is grooved along the < 1{\\bar 1}00 >\\textrm{GaN} direction, and the bottoms of the trenches and the sidewalls are covered with a silicon nitride mask. A free-standing GaN material is regrown from the exposed (0001) surface of the ridged GaN seed structure. Cross-sectional transmission electron microscopy analysis reveals that the dislocations originating from the underlying seed GaN extend straight in the < 0001 > direction and dislocations do not propagate into the wing region. The wing region also exhibits a smooth surface and the root mean square roughness is found to be 0.088 nm by atomic force microscopy measurement of the (0001) face of the wing region.

  15. High uniform growth of 4-inch GaN wafer via flow field optimization by HVPE

    NASA Astrophysics Data System (ADS)

    Cheng, Yutian; Liu, Peng; Wu, Jiejun; Xiang, Yong; Chen, Xinjuan; Ji, Cheng; Yu, Tongjun; Zhang, Guoyi

    2016-07-01

    The uniformity of flow field inner the reactor plays a crucial role for hydride vapor phase epitaxy (HVPE) crystal growth and its more important for large scale substrate. A new nozzle structure was designed by adding a push and dilution (PD) gas pipe in the center of gas channels for a 4-inch HVPE (PD-HVPE) system. Experimental results showed that the thickness inhomogeneity of 46 μm 4-inch GaN layer could reach ±1.8% by optimizing PD gas, greatly improved from ±14% grown with conventional nozzle. The simulations of the internal flow field were consistent with our experiment, and the enhancement in uniformity should be attributed to the redistribution of GaCl and NH3 upon the wafer induced by PD pipe. The full width at half maximum (FWHM) of X-ray diffraction rocking curves for the 4-inch GaN film were about 224 and 200 arcsec for (002) and (102) reflection. The dislocation density of as-grown GaN was about 6.4×107 cm-2.

  16. Vertical GaN power diodes with a bilayer edge termination

    SciTech Connect

    Dickerson, Jeramy R.; Allerman, Andrew A.; Bryant, Benjamin N.; Fischer, Arthur J.; King, Michael P.; Moseley, Michael W.; Armstrong, Andrew M.; Kaplar, Robert J.; Kizilyalli, Isik C.; Aktas, Ozgur; Wierer, Jr., Jonathan J.

    2015-12-07

    Vertical GaN power diodes with a bilayer edge termination (ET) are demonstrated. The GaN p-n junction is formed on a low threading dislocation defect density (104 - 105 cm-2) GaN substrate, and has a 15-μm-thick n-type drift layer with a free carrier concentration of 5 × 1015 cm-3. The ET structure is formed by N implantation into the p+-GaN epilayer just outside the p-type contact to create compensating defects. The implant defect profile may be approximated by a bilayer structure consisting of a fully compensated layer near the surface, followed by a 90% compensated (p) layer near the n-type drift region. These devices exhibit avalanche breakdown as high as 2.6 kV at room temperature. In addition simulations show that the ET created by implantation is an effective way to laterally distribute the electric field over a large area. This increases the voltage at which impact ionization occurs and leads to the observed higher breakdown voltages.

  17. Vertical GaN power diodes with a bilayer edge termination

    DOE PAGES

    Dickerson, Jeramy R.; Allerman, Andrew A.; Bryant, Benjamin N.; ...

    2015-12-07

    Vertical GaN power diodes with a bilayer edge termination (ET) are demonstrated. The GaN p-n junction is formed on a low threading dislocation defect density (104 - 105 cm-2) GaN substrate, and has a 15-μm-thick n-type drift layer with a free carrier concentration of 5 × 1015 cm-3. The ET structure is formed by N implantation into the p+-GaN epilayer just outside the p-type contact to create compensating defects. The implant defect profile may be approximated by a bilayer structure consisting of a fully compensated layer near the surface, followed by a 90% compensated (p) layer near the n-type driftmore » region. These devices exhibit avalanche breakdown as high as 2.6 kV at room temperature. In addition simulations show that the ET created by implantation is an effective way to laterally distribute the electric field over a large area. This increases the voltage at which impact ionization occurs and leads to the observed higher breakdown voltages.« less

  18. Habit control during growth on GaN point seed crystals by Na-flux method

    NASA Astrophysics Data System (ADS)

    Honjo, Masatomo; Imanishi, Masayuki; Imabayashi, Hiroki; Nakamura, Kosuke; Murakami, Kosuke; Matsuo, Daisuke; Maruyama, Mihoko; Imade, Mamoru; Yoshimura, Masashi; Mori, Yusuke

    2017-01-01

    The formation of the pyramidal habit is one of the requirements for the dramatic reduction of dislocations during growth on a tiny GaN seed called a “point seed”. In this study, we focus on controlling the growth habit to form a pyramidal shape in order to reduce the number of dislocations in the c-growth sector during growth on GaN point seeds. High temperature growth was found to change the growth habit from the truncated pyramidal shape to the pyramidal shape. As a result, the number of dislocations in the c-growth sector tended to decrease with increasing growth temperature.

  19. A continuum theory of edge dislocations

    NASA Astrophysics Data System (ADS)

    Berdichevsky, V. L.

    2017-09-01

    Continuum theory of dislocation aims to describe the behavior of large ensembles of dislocations. This task is far from completion, and, most likely, does not have a ;universal solution;, which is applicable to any dislocation ensemble. In this regards it is important to have guiding lines set by benchmark cases, where the transition from a discrete set of dislocations to a continuum description is made rigorously. Two such cases have been considered recently: equilibrium of dislocation walls and screw dislocations in beams. In this paper one more case is studied, equilibrium of a large set of 2D edge dislocations placed randomly in a 2D bounded region. The major characteristic of interest is energy of dislocation ensemble, because it determines the structure of continuum equations. The homogenized energy functional is obtained for the periodic dislocation ensembles with a random contents of the periodic cell. Parameters of the periodic structure can change slowly on distances of order of the size of periodic cells. The energy functional is obtained by the variational-asymptotic method. Equilibrium positions are local minima of energy. It is confirmed the earlier assertion that energy density of the system is the sum of elastic energy of averaged elastic strains and microstructure energy, which is elastic energy of the neutralized dislocation system, i.e. the dislocation system placed in a constant dislocation density field making the averaged dislocation density zero. The computation of energy is reduced to solution of a variational cell problem. This problem is solved analytically. The solution is used to investigate stability of simple dislocation arrays, i.e. arrays with one dislocation in the periodic cell. The relations obtained yield two outcomes: First, there is a state parameter of the system, dislocation polarization; averaged stresses affect only dislocation polarization and cannot change other characteristics of the system. Second, the structure of

  20. Alignment control and atomically-scaled heteroepitaxial interface study of GaN nanowires.

    PubMed

    Liu, Qingyun; Liu, Baodan; Yang, Wenjin; Yang, Bing; Zhang, Xinglai; Labbé, Christophe; Portier, Xavier; An, Vladimir; Jiang, Xin

    2017-04-11

    Well-aligned GaN nanowires are promising candidates for building high-performance optoelectronic nanodevices. In this work, we demonstrate the epitaxial growth of well-aligned GaN nanowires on a [0001]-oriented sapphire substrate in a simple catalyst-assisted chemical vapor deposition process and their alignment control. It is found that the ammonia flux plays a key role in dominating the initial nucleation of GaN nanocrystals and their orientation. Typically, significant improvement of the GaN nanowire alignment can be realized at a low NH3 flow rate. X-ray diffraction and cross-sectional scanning electron microscopy studies further verified the preferential orientation of GaN nanowires along the [0001] direction. The growth mechanism of GaN nanowire arrays is also well studied based on cross-sectional high-resolution transmission electron microscopy (HRTEM) characterization and it is observed that GaN nanowires have good epitaxial growth on the sapphire substrate following the crystallographic relationship between (0001)GaN∥(0001)sapphire and (101[combining macron]0)GaN∥(112[combining macron]0)sapphire. Most importantly, periodic misfit dislocations are also experimentally observed in the interface region due to the large lattice mismatch between the GaN nanowire and the sapphire substrate, and the formation of such dislocations will favor the release of structural strain in GaN nanowires. HRTEM analysis also finds the existence of "type I" stacking faults and voids inside the GaN nanowires. Optical investigation suggests that the GaN nanowire arrays have strong emission in the UV range, suggesting their crystalline nature and chemical purity. The achievement of aligned GaN nanowires will further promote the wide applications of GaN nanostructures toward diverse high-performance optoelectronic nanodevices including nano-LEDs, photovoltaic cells, photodetectors etc.

  1. Compositionally graded relaxed AlGaN buffers on semipolar GaN for mid-ultraviolet emission

    SciTech Connect

    Young, Erin C.; Wu Feng; Haeger, Daniel A.; Nakamura, Shuji; Denbaars, Steven P.; Cohen, Daniel A.; Speck, James S.; Romanov, Alexey E.

    2012-10-01

    In this Letter, we report on the growth and properties of relaxed, compositionally graded Al{sub x}Ga{sub 1-x}N buffer layers on freestanding semipolar (2021) GaN substrates. Continuous and step compositional grades with Al concentrations up to x = 0.61 have been achieved, with emission wavelengths in the mid-ultraviolet region as low as 265 nm. Coherency stresses were relaxed progressively throughout the grades by misfit dislocation generation via primary (basal) slip and secondary (non-basal) slip systems. Threading dislocation densities in the final layers of the grades were less than 10{sup 6}/cm{sup 2} as confirmed by plan-view transmission electron microscopy and cathodoluminescence studies.

  2. Tuning the polarization-induced free hole density in nanowires graded from GaN to AlN

    SciTech Connect

    Golam Sarwar, A. T. M.; Carnevale, Santino D.; Kent, Thomas F.; Yang, Fan; McComb, David W.; Myers, Roberto C.

    2015-01-19

    We report a systematic study of p-type polarization-induced doping in graded AlGaN nanowire light emitting diodes grown on silicon wafers by plasma-assisted molecular beam epitaxy. The composition gradient in the p-type base is varied in a set of samples from 0.7%Al/nm to 4.95%Al/nm corresponding to negative bound polarization charge densities of 2.2 × 10{sup 18 }cm{sup −3} to 1.6 × 10{sup 19 }cm{sup −3}. Capacitance measurements and energy band modeling reveal that for gradients greater than or equal to 1.30%Al/nm, the deep donor concentration is negligible and free hole concentrations roughly equal to the bound polarization charge density are achieved up to 1.6 × 10{sup 19 }cm{sup −3} at a gradient of 4.95%Al/nm. Accurate grading lengths in the p- and n-side of the pn-junction are extracted from scanning transmission electron microscopy images and are used to support energy band calculation and capacitance modeling. These results demonstrate the robust nature of p-type polarization doping in nanowires and put an upper bound on the magnitude of deep donor compensation.

  3. Orthodox etching of HVPE-grown GaN

    SciTech Connect

    Weyher, J.L.; Lazar, S.; Macht, L.; Liliental-Weber, Z.; Molnar,R.J.; Muller, S.; Nowak, G.; Grzegory, I.

    2006-08-10

    Orthodox etching of HVPE-grown GaN in molten eutectic of KOH + NaOH (E etch) and in hot sulfuric and phosphoric acids (HH etch) is discussed in detail. Three size grades of pits are formed by the preferential E etching at the outcrops of threading dislocations on the Ga-polar surface of GaN. Using transmission electron microscopy (TEM) as the calibration tool it is shown that the largest pits are formed on screw, intermediate on mixed and the smallest on edge dislocations. This sequence of size does not follow the sequence of the Burgers values (and thus the magnitude of the elastic energy) of corresponding dislocations. This discrepancy is explained taking into account the effect of decoration of dislocations, the degree of which is expected to be different depending on the lattice deformation around the dislocations, i.e. on the edge component of the Burgers vector. It is argued that the large scatter of optimal etching temperatures required for revealing all three types of dislocations in HVPE-grown samples from different sources also depends upon the energetic status of dislocations. The role of kinetics for reliability of etching in both etches is discussed and the way of optimization of the etching parameters is shown.

  4. Impact of defects on the electrical transport, optical properties and failure mechanisms of GaN nanowires.

    SciTech Connect

    Armstrong, Andrew M.; Aubry, Sylvie; Shaner, Eric Arthur; Siegal, Michael P.; Li, Qiming; Jones, Reese E.; Westover, Tyler; Wang, George T.; Zhou, Xiao Wang; Talin, Albert Alec; Bogart, Katherine Huderle Andersen; Harris, C. Thomas; Huang, Jian Yu

    2010-09-01

    We present the results of a three year LDRD project that focused on understanding the impact of defects on the electrical, optical and thermal properties of GaN-based nanowires (NWs). We describe the development and application of a host of experimental techniques to quantify and understand the physics of defects and thermal transport in GaN NWs. We also present the development of analytical models and computational studies of thermal conductivity in GaN NWs. Finally, we present an atomistic model for GaN NW electrical breakdown supported with experimental evidence. GaN-based nanowires are attractive for applications requiring compact, high-current density devices such as ultraviolet laser arrays. Understanding GaN nanowire failure at high-current density is crucial to developing nanowire (NW) devices. Nanowire device failure is likely more complex than thin film due to the prominence of surface effects and enhanced interaction among point defects. Understanding the impact of surfaces and point defects on nanowire thermal and electrical transport is the first step toward rational control and mitigation of device failure mechanisms. However, investigating defects in GaN NWs is extremely challenging because conventional defect spectroscopy techniques are unsuitable for wide-bandgap nanostructures. To understand NW breakdown, the influence of pre-existing and emergent defects during high current stress on NW properties will be investigated. Acute sensitivity of NW thermal conductivity to point-defect density is expected due to the lack of threading dislocation (TD) gettering sites, and enhanced phonon-surface scattering further inhibits thermal transport. Excess defect creation during Joule heating could further degrade thermal conductivity, producing a viscous cycle culminating in catastrophic breakdown. To investigate these issues, a unique combination of electron microscopy, scanning luminescence and photoconductivity implemented at the nanoscale will be used in

  5. Relaxation of compressively strained AlGaN by inclined threading dislocations.

    SciTech Connect

    Follstaedt, David Martin; Lee, Stephen Roger; Crawford, Mary Hagerott; Provencio, Paula Polyak; Allerman, Andrew Alan; Floro, Jerrold Anthony

    2005-06-01

    Transmission electron microscopy and x-ray diffraction were used to assess the microstructure and strain of Al{sub x}Ga{sub 1?x}N(x = 0.61-0.64) layers grown on AlN. The compressively-strained AlGaN is partially relaxed by inclined threading dislocations, similar to observations on Si-doped AlGaN by P. Cantu, F. Wu, P. Waltereit, S. Keller, A. E. Romanov, U. K. Mishra, S. P. DenBaars, and J. S. Speck [Appl. Phys. Lett. 83, 674 (2003) ]; however, in our material, the dislocations bend before the introduction of any Si. The bending may be initiated by the greater lattice mismatch or the lower dislocation density of our material, but the presence of Si is not necessarily required. The relaxation by inclined dislocations is quantitatively accounted for with the model of A. E. Romanov and J. S. Speck [Appl. Phys. Lett. 83, 2569 (2003)], and we demonstrate the predicted linear dependence of relaxation on layer thickness. Notably, such relaxation was not found in tensile strained AlGaN grown on GaN [J. A. Floro, D. M. Follstaedt, P. Provencio, S. J. Hearne, and S. R. Lee, J. Appl. Phys. 96, 7087 (2004)], even though the same mechanism appears applicable.

  6. Relaxation of compressively-strained AlGaN by inclined threading dislocations

    NASA Astrophysics Data System (ADS)

    Follstaedt, D. M.; Lee, S. R.; Provencio, P. P.; Allerman, A. A.; Floro, J. A.; Crawford, M. H.

    2005-09-01

    Transmission electron microscopy and x-ray diffraction were used to assess the microstructure and strain of AlxGa1-xN(x=0.61-0.64) layers grown on AlN. The compressively-strained AlGaN is partially relaxed by inclined threading dislocations, similar to observations on Si-doped AlGaN by P. Cantu, F. Wu, P. Waltereit, S. Keller, A. E. Romanov, U. K. Mishra, S. P. DenBaars, and J. S. Speck [Appl. Phys. Lett. 83, 674 (2003)]; however, in our material, the dislocations bend before the introduction of any Si. The bending may be initiated by the greater lattice mismatch or the lower dislocation density of our material, but the presence of Si is not necessarily required. The relaxation by inclined dislocations is quantitatively accounted for with the model of A. E. Romanov and J. S. Speck [Appl. Phys. Lett. 83, 2569 (2003)], and we demonstrate the predicted linear dependence of relaxation on layer thickness. Notably, such relaxation was not found in tensile strained AlGaN grown on GaN [J. A. Floro, D. M. Follstaedt, P. Provencio, S. J. Hearne, and S. R. Lee, J. Appl. Phys. 96, 7087 (2004)], even though the same mechanism appears applicable.

  7. Knee Dislocations

    PubMed Central

    Schenck, Robert C.; Richter, Dustin L.; Wascher, Daniel C.

    2014-01-01

    Background: Traumatic knee dislocation is becoming more prevalent because of improved recognition and increased exposure to high-energy trauma, but long-term results are lacking. Purpose: To present 2 cases with minimum 20-year follow-up and a review of the literature to illustrate some of the fundamental principles in the management of the dislocated knee. Study Design: Review and case reports. Methods: Two patients with knee dislocations who underwent multiligamentous knee reconstruction were reviewed, with a minimum 20-year follow-up. These patients were brought back for a clinical evaluation using both subjective and objective measures. Subjective measures include the following scales: Lysholm, Tegner activity, visual analog scale (VAS), Short Form–36 (SF-36), International Knee Documentation Committee (IKDC), and a psychosocial questionnaire. Objective measures included ligamentous examination, radiographic evaluation (including Telos stress radiographs), and physical therapy assessment of function and stability. Results: The mean follow-up was 22 years. One patient had a vascular injury requiring repair prior to ligament reconstruction. The average assessment scores were as follows: SF-36 physical health, 52; SF-36 mental health, 59; Lysholm, 92; IKDC, 86.5; VAS involved, 10.5 mm; and VAS uninvolved, 2.5 mm. Both patients had excellent stability and were functioning at high levels of activity for their age (eg, hiking, skydiving). Both patients had radiographic signs of arthritis, which lowered 1 subject’s IKDC score to “C.” Conclusion: Knee dislocations have rare long-term excellent results, and most intermediate-term studies show fair to good functional results. By following fundamental principles in the management of a dislocated knee, patients can be given the opportunity to function at high levels. Hopefully, continued advances in the evaluation and treatment of knee dislocations will improve the long-term outcomes for these patients in the

  8. Comparison between structural properties of bulk GaN grown under high N pressure and GaN grown by other methods

    SciTech Connect

    Liliental-Weber, Z.; Jasinski, J.; Washburn, J.

    2002-07-31

    In this paper defects formed in GaN grown by different methods are reviewed. Formation of particular defects are often related to the crystallographic direction in which the crystals grow. For bulk crystals the highest growth rates are observed for directions perpendicular to the c-axis. Threading dislocations and nanopipes along the c-axis are not formed in these crystals, but polarity of the growth direction plays a role concerning defects that are formed and surface roughness. For growth of homoepitaxial layers, where growth is forced to take place in the c-direction threading dislocations are formed and their density is related to the purity of constituents used for growth and to substrate surface inhomogeneities. In heteroepitaxial layers two other factors: lattice mismatch and thermal expansion mismatch are related to the formation of dislocations. Doping of crystals can also lead to formation of defects characteristic for a specific dopant. This type of defects tends to be growth method independent but can depend on growth polarity.

  9. Statistical analysis of dislocations and dislocation boundaries from EBSD data.

    PubMed

    Moussa, C; Bernacki, M; Besnard, R; Bozzolo, N

    2017-08-01

    Electron BackScatter Diffraction (EBSD) is often used for semi-quantitative analysis of dislocations in metals. In general, disorientation is used to assess Geometrically Necessary Dislocations (GNDs) densities. In the present paper, we demonstrate that the use of disorientation can lead to inaccurate results. For example, using the disorientation leads to different GND density in recrystallized grains which cannot be physically justified. The use of disorientation gradients allows accounting for measurement noise and leads to more accurate results. Misorientation gradient is then used to analyze dislocations boundaries following the same principle applied on TEM data before. In previous papers, dislocations boundaries were defined as Geometrically Necessary Boundaries (GNBs) and Incidental Dislocation Boundaries (IDBs). It has been demonstrated in the past, through transmission electron microscopy data, that the probability density distribution of the disorientation of IDBs and GNBs can be described with a linear combination of two Rayleigh functions. Such function can also describe the probability density of disorientation gradient obtained through EBSD data as reported in this paper. This opens the route for determining IDBs and GNBs probability density distribution functions separately from EBSD data, with an increased statistical relevance as compared to TEM data. The method is applied on deformed Tantalum where grains exhibit dislocation boundaries, as observed using electron channeling contrast imaging. Copyright © 2017 Elsevier B.V. All rights reserved.

  10. Misfit dislocation locking and rotation during gallium nitride growth on SiC/Si substrates

    NASA Astrophysics Data System (ADS)

    Kukushkin, S. A.; Osipov, A. V.; Bessolov, V. N.; Konenkova, E. V.; Panteleev, V. N.

    2017-04-01

    The effect of changing the misfit dislocation propagation direction during GaN layer growth on the AlN/SiC/Si(111) structure surface is detected. The effect is as follows. As the GaN layer growing on AlN/SiC/Si(111) reaches a certain thickness of 300 nm, misfit dislocations initially along the layer growth axis stop and begin to move in the direction perpendicular to the growth axis. A theoretical model of AlN and GaN nucleation on the (111) SiC/Si face, explaining the effect of changing the misfit dislocation motion direction, is constructed. The effect of changing the nucleation mechanism from the island one for AlN on SiC/Si(111) to the layer one for the GaN layer on AlN/SiC/Si is experimentally detected and theoretically explained.

  11. Chemical exfoliation and optical characterization of threading-dislocation-free gallium-nitride ultrathin nanomembranes

    NASA Astrophysics Data System (ADS)

    ElAfandy, Rami T.; Majid, Mohammed A.; Ng, Tien Khee; Zhao, Lan; Cha, Dongkyu; Ooi, Boon S.

    2014-11-01

    Semiconductor nanostructures have generated tremendous scientific interests as well as practical applications stemming from the engineering of low dimensional physics phenomena. Unlike 0D and 1D nanostructures, such as quantum dots and nanowires, respectively, 2D structures, such as nanomembranes, are unrivalled in their scalability for high yield manufacture and are less challenging in handling with the current transfer techniques. Furthermore, due to their planar geometry, nanomembranes are compatible with the current complementary metal oxide semiconductor (CMOS) technology. Due to these superior characteristics, there are currently different techniques in exfoliating nanomembranes with different crystallinities, thicknesses and compositions. In this work we demonstrate a new facile technique of exfoliating gallium nitride (GaN) nanomembranes with novel features, namely with the non-radiative cores of their threading-dislocations (TDs) being etched away. The exfoliation process is based on engineering the gallium vacancy (VGa) density during the GaN epitaxial growth with subsequent preferential etching. Based on scanning and transmission electron microscopies, as well as micro-photoluminescence measurements, a model is proposed to uncover the physical processes underlying the formation of the nanomembranes. Raman measurements are also performed to reveal the internal strain within the nanomembranes. After transferring these freely suspended 25 nm thin GaN nanomembranes to other substrates, we demonstrate the temperature dependence of their bandgap by photoluminescence technique, in order to shed light on the internal carrier dynamics.

  12. Structural properties of free-standing 50 mm diameter GaN waferswith (101_0) orientation grown on LiAlO2

    SciTech Connect

    Jasinski, Jacek; Liliental-Weber, Zuzanna; Maruska, Herbert-Paul; Chai, Bruce H.; Hill, David W.; Chou, Mitch M.C.; Gallagher, John J.; Brown, Stephen

    2005-09-27

    (10{und 1}0) GaN wafers grown on (100) face of {gamma}-LiAlO{sub 2} were studied using transmission electron microscopy. Despite good lattice matching in this heteroepitaxial system, high densities of planar structural defects in the form of stacking faults on the basal plane and networks of boundaries located on prism planes inclined to the layer/substrate interface were present in these GaN layers. In addition, significant numbers of threading dislocations were observed. High-resolution electron microscopy indicates that stacking faults present on the basal plane in these layers are of low-energy intrinsic I1type. This is consistent with diffraction contrast experiments.

  13. Deep-level defects related to the emissive pits in thick InGaN films on GaN template and bulk substrates

    NASA Astrophysics Data System (ADS)

    Sumiya, Masatomo; Toyomitsu, Naoki; Nakano, Yoshitaka; Wang, Jianyu; Harada, Yoshitomo; Sang, Liwen; Sekiguchi, Takashi; Yamaguchi, Tomohiro; Honda, Tohru

    2017-01-01

    We studied the emissive pits in InGaN films grown on compressive and strain-free GaN underlying layers. Pit density decreased with the full width at half maximum of ω(0002) of InGaN. The films grew on compressive and strain-free GaN underlying layers with spiral and step-flow modes, respectively. Carbon impurities accumulated inside the pits. Comparison of cathodoluminescence inside the pits and steady-state photocapacitance spectra showed that the energy level of the carbon impurities appeared at ˜2.8 eV below the conduction band (Ec) for both types of pits. Deep-level defects at Ec -2.4 eV resulting in green fluorescence emission were considered to originate from pits related to screw dislocations.

  14. Low-Angle-Incidence Microchannel Epitaxy of a-Plane GaN Grown by Ammonia-Based Metal-Organic Molecular Beam Epitaxy

    NASA Astrophysics Data System (ADS)

    Lin, Chia-Hung; Uchiyama, Shota; Maruyama, Takahiro; Naritsuka, Shigeya

    2012-04-01

    Low-angle-incidence microchannel epitaxy (LAIMCE) of a-plane GaN was performed using ammonia-based metal-organic molecular beam epitaxy to obtain wide and thin lateral overgrowth over a SiO2 mask. Trimethylgallium (TMG) was supplied perpendicular to the openings cut in the mask with a low incident angle of 5° relative to the substrate plane. The [NH3]/[TMG] ratio (R) dependence of GaN LAIMCE was optimized by varying R from 5 to 30. A wide lateral overgrowth of 3.7 µm with a dislocation density below the transmission electron microscope detection limit was obtained at R=15 for a thickness of 520 nm.

  15. Effect of pre-existing immobile dislocations on the evolution of geometrically necessary dislocations during fatigue

    NASA Astrophysics Data System (ADS)

    Irastorza-Landa, Ainara; Grilli, Nicolò; Van Swygenhoven, Helena

    2017-07-01

    The role of pre-existing mobile and immobile dislocation densities on the evolution of geometrical necessary dislocation densities (GNDs) during cyclic fatigue in shear is studied using a continuum dislocation-based model incorporated in a crystal plasticity finite element scheme. Clusters with different immobile dislocation densities are implemented in a homogeneous medium containing a certain mobile dislocation density. It is found that whether GND walls are formed around the initial immobile cluster (or not) strongly depends on the absolute values of initial mobile dislocation density and on the ratio between mobile and immobile densities. The results are discussed in terms of the apparent GND densities experimentally obtained using Laue micro-diffraction.

  16. Simple Elbow Dislocation.

    PubMed

    Armstrong, April

    2015-11-01

    Simple elbow dislocation refers to those elbow dislocations that do not involve an osseous injury. A complex elbow dislocation refers to an elbow that has dislocated with an osseous injury. Most simple elbow dislocations are treated nonoperatively. Understanding the importance of the soft tissue injury following a simple elbow dislocation is a key to being successful with treatment.

  17. Effect of Threading Dislocations on the Quality Factor of InGaN/GaN Microdisk Cavities.

    PubMed

    Puchtler, Tim J; Woolf, Alexander; Zhu, Tongtong; Gachet, David; Hu, Evelyn L; Oliver, Rachel A

    2015-01-21

    In spite of the theoretical advantages associated with nitride microcavities, the quality factors of devices with embedded indium gallium nitride (InGaN) or gallium nitride (GaN) optical emitters still remain low. In this work we identify threading dislocations (TDs) as a major limitation to the fabrication of high quality factor devices in the nitrides. We report on the use of cathodoluminescence (CL) to identify individual TD positions within microdisk lasers containing either InGaN quantum wells or quantum dots. Using CL to accurately count the number, and map the position, of dislocations within several individual cavities, we have found a clear correlation between the density of defects in the high-field region of a microdisk and its corresponding quality factor (Q). We discuss possible mechanisms associated with defects, photon scattering, and absorption, which could be responsible for degraded device performance.

  18. Effect of Threading Dislocations on the Quality Factor of InGaN/GaN Microdisk Cavities

    PubMed Central

    2014-01-01

    In spite of the theoretical advantages associated with nitride microcavities, the quality factors of devices with embedded indium gallium nitride (InGaN) or gallium nitride (GaN) optical emitters still remain low. In this work we identify threading dislocations (TDs) as a major limitation to the fabrication of high quality factor devices in the nitrides. We report on the use of cathodoluminescence (CL) to identify individual TD positions within microdisk lasers containing either InGaN quantum wells or quantum dots. Using CL to accurately count the number, and map the position, of dislocations within several individual cavities, we have found a clear correlation between the density of defects in the high-field region of a microdisk and its corresponding quality factor (Q). We discuss possible mechanisms associated with defects, photon scattering, and absorption, which could be responsible for degraded device performance. PMID:25839048

  19. Controlling morphology and optical properties of self-catalyzed, mask-free GaN rods and nanorods by metal-organic vapor phase epitaxy

    NASA Astrophysics Data System (ADS)

    Tessarek, C.; Bashouti, M.; Heilmann, M.; Dieker, C.; Knoke, I.; Spiecker, E.; Christiansen, S.

    2013-10-01

    A simple self-catalyzed and mask-free approach will be presented to grow GaN rods and nanorods based on the metal-organic vapor phase epitaxy technique. The growth parameter dependent adjustment of the morphology of the structures will be discussed. Rods and nanorods with diameters reaching from a few μm down to 100 nm, heights up to 48 μm, and densities up to 8ṡ107 cm-2 are all vertically aligned with respect to the sample surface and exhibiting a hexagonal shape with smooth sidewall facets. Optical properties of GaN nanorods were determined using cathodoluminescence. It will be shown that the optical properties can be improved just by reducing the Ga precursor flow. Furthermore, for regular hexagonal shaped rods and nanorods, whispering gallery modes with quality factors up to 500 were observed by cathodoluminescence pointing out high morphological quality of the structures. Structural investigations using transmission electron microscopy show that larger GaN nanorods (diameter > 500 nm) contain threading dislocations in the bottom part and vertical inversion domain boundaries, which separate a Ga-polar core from a N-polar shell. In contrast, small GaN nanorods (˜200 nm) are largely free of such extended defects. Finally, evidence for a self-catalyzed, Ga-induced vapor-liquid-solid growth will be discussed.

  20. Theoretical study of gallium nitride molecules, GaN2 and GaN4.

    PubMed

    Tzeli, Demeter; Theodorakopoulos, Giannoula; Petsalakis, Ioannis D

    2008-09-18

    The electronic and geometric structures of gallium dinitride GaN 2, and gallium tetranitride molecules, GaN 4, were systematically studied by employing density functional theory and perturbation theory (MP2, MP4) in conjunction with the aug-cc-pVTZ basis set. In addition, for the ground-state of GaN 4( (2)B 1) a density functional theory study was carried out combining different functionals with different basis sets. A total of 7 minima have been identified for GaN 2, while 37 structures were identified for GaN 4 corresponding to minima, transition states, and saddle points. We report geometries and dissociation energies for all the above structures as well as potential energy profiles, potential energy surfaces and bonding mechanisms for some low-lying electronic states of GaN 4. The dissociation energy of the ground-state GaN 2 ( X (2)Pi) is 1.1 kcal/mol with respect to Ga( (2)P) + N 2( X (1)Sigma g (+)). The ground-state and the first two excited minima of GaN 4 are of (2)B 1( C 2 v ), (2)A 1( C 2 v , five member ring), and (4)Sigma g (-)( D infinityh ) symmetry, respectively. The dissociation energy ( D e) of the ground-state of GaN 4, X (2)B 1, with respect to Ga( (2)P) + 2 N 2( X (1)Sigma g (+)), is 2.4 kcal/mol, whereas the D e of (4)Sigma g (-) with respect to Ga( (4)P) + 2 N 2( X (1)Sigma g (+)) is 17.6 kcal/mol.

  1. Impact of dislocation densities on n+/p and p+/n junction GaAs diodes and solar cells on SiGe virtual substrates

    NASA Astrophysics Data System (ADS)

    Andre, C. L.; Wilt, D. M.; Pitera, A. J.; Lee, M. L.; Fitzgerald, E. A.; Ringel, S. A.

    2005-07-01

    Recent experimental measurements have shown that in GaAs with elevated threading dislocation densities (TDDs) the electron lifetime is much lower than the hole lifetime [C. L. Andre, J. J. Boeckl, D. M. Wilt, A. J. Pitera, M. L. Lee, E. A. Fitzgerald, B. M. Keyes, and S. A. Ringel, Appl. Phys. Lett. 84, 3884 (2004)]. This lower electron lifetime suggests an increase in depletion region recombination and thus in the reverse saturation current (J0 for an n+/p diode compared with a p+/n diode at a given TDD. To confirm this, GaAs diodes of both polarities were grown on compositionally graded Ge /Si1-xGex/Si (SiGe) substrates with a TDD of 1×106cm-2. It is shown that the ratio of measured J0 values is consistent with the inverse ratio of the expected lifetimes. Using a TDD-dependent lifetime in solar cell current-voltage models we found that the Voc, for a given short-circuit current, also exhibits a poorer TDD tolerance for GaAs n+/p solar cells compared with GaAs p+/n solar cells. Experimentally, the open-circuit voltage (Voc) for the n+/p GaAs solar cell grown on a SiGe substrate with a TDD of ˜1×106cm-2 was ˜880mV which was significantly lower than the ˜980mV measured for a p+/n GaAs solar cell grown on SiGe at the same TDD and was consistent with the solar cell modeling results reported in this paper. We conclude that p+/n polarity GaAs junctions demonstrate superior dislocation tolerance than n+/p configured GaAs junctions, which is important for optimization of lattice-mismatched III-V devices.

  2. Quenched dislocation enhanced supersolid ordering.

    PubMed

    Toner, John

    2008-01-25

    I show using Landau theory that quenched dislocations can facilitate the supersolid to normal solid transition, making it possible for the transition to occur even if it does not in a dislocation-free crystal. I make detailed predictions for the dependence of the supersolid to normal solid transition temperature T_{c}(L), superfluid density rho_{S}(T,L), and specific heat C(T,L) on temperature T and dislocation spacing L, all of which can be tested against experiments. The results should also be applicable to an enormous variety of other systems, including, e.g., ferromagnets.

  3. Deep levels in as-grown and electron-irradiated n-type GaN studied by deep level transient spectroscopy and minority carrier transient spectroscopy

    SciTech Connect

    Duc, Tran Thien; Pozina, Galia; Son, Nguyen Tien; Kordina, Olof; Janzén, Erik; Hemmingsson, Carl; Ohshima, Takeshi

    2016-03-07

    Development of high performance GaN-based devices is strongly dependent on the possibility to control and understand defects in material. Important information about deep level defects is obtained by deep level transient spectroscopy and minority carrier transient spectroscopy on as-grown and electron irradiated n-type bulk GaN with low threading dislocation density produced by halide vapor phase epitaxy. One hole trap labelled H1 (E{sub V} + 0.34 eV) has been detected on as-grown GaN sample. After 2 MeV electron irradiation, the concentration of H1 increases and at fluences higher than 5 × 10{sup 14 }cm{sup −2}, a second hole trap labelled H2 is observed. Simultaneously, the concentration of two electron traps, labelled T1 (E{sub C} – 0.12 eV) and T2 (E{sub C} – 0.23 eV), increases. By studying the increase of the defect concentration versus electron irradiation fluence, the introduction rate of T1 and T2 using 2 MeV- electrons was determined to be 7 × 10{sup −3 }cm{sup −1} and 0.9 cm{sup −1}, respectively. Due to the low introduction rate of T1, it is suggested that the defect is associated with a complex. The high introduction rate of trap H1 and T2 suggests that the defects are associated with primary intrinsic defects or complexes. Some deep levels previously observed in irradiated GaN layers with higher threading dislocation densities are not detected in present investigation. It is therefore suggested that the absent traps may be related to primary defects segregated around dislocations.

  4. Investigation of the Dynamics of a Screw Dislocation in Copper

    NASA Astrophysics Data System (ADS)

    Kolupaeva, S. N.; Petelina, Yu. P.; Polosukhin, K. A.; Petelin, A. E.

    2015-08-01

    A modification of the mathematical model of forming the crystallographic shear band is proposed in which the strength of elastic interaction between all dislocations of the forming dislocation pileups is taken into account in addition to the Peach-Keller force; lattice, impurity, and dislocation friction; linear tension; viscous braking; and intensity of generation of point defects behind kinks. The model is used to investigate the influence of the dislocation density on the time characteristics of the formation of dislocation loops in copper.

  5. Identification of the primary compensating defect level responsible for determining blocking voltage of vertical GaN power diodes

    DOE PAGES

    King, M. P.; Kaplar, R. J.; Dickerson, J. R.; ...

    2016-10-31

    Electrical performance and characterization of deep levels in vertical GaN P-i-N diodes grown on low threading dislocation density (~104 –106 cm–2) bulk GaN substrates are investigated. The lightly doped n drift region of these devices is observed to be highly compensated by several prominent deep levels detected using deep level optical spectroscopy at Ec-2.13, 2.92, and 3.2 eV. A combination of steady-state photocapacitance and lighted capacitance-voltage profiling indicates the concentrations of these deep levels to be Nt = 3 × 1012, 2 × 1015, and 5 × 1014 cm–3, respectively. The Ec-2.92 eV level is observed to be the primarymore » compensating defect in as-grown n-type metal-organic chemical vapor deposition GaN, indicating this level acts as a limiting factor for achieving controllably low doping. The device blocking voltage should increase if compensating defects reduce the free carrier concentration of the n drift region. Understanding the incorporation of as-grown and native defects in thick n-GaN is essential for enabling large VBD in the next-generation wide-bandgap power semiconductor devices. Furthermore, controlling the as-grown defects induced by epitaxial growth conditions is critical to achieve blocking voltage capability above 5 kV.« less

  6. Grouped and Multistep Nanoheteroepitaxy: Toward High-Quality GaN on Quasi-Periodic Nano-Mask.

    PubMed

    Feng, Xiaohui; Yu, Tongjun; Wei, Yang; Ji, Cheng; Cheng, Yutian; Zong, Hua; Wang, Kun; Yang, Zhijian; Kang, Xiangning; Zhang, Guoyi; Fan, Shoushan

    2016-07-20

    A novel nanoheteroepitaxy method, namely, the grouped and multistep nanoheteroepitaxy (GM-NHE), is proposed to attain a high-quality gallium nitride (GaN) epilayer by metal-organic vapor phase epitaxy. This method combines the effects of sub-100 nm nucleation and multistep lateral growth by using a low-cost but unique carbon nanotube mask, which consists of nanoscale growth windows with a quasi-periodic 2D fill factor. It is found that GM-NHE can facilely reduce threading dislocation density (TDD) and modulate residual stress on foreign substrate without any regrowth. As a result, high-quality GaN epilayer is produced with homogeneously low TDD of 4.51 × 10(7) cm(-2) and 2D-modulated stress, and the performance of the subsequent 410 nm near-ultraviolet light-emitting diode is greatly boosted. In this way, with the facile fabrication of nanomask and the one-off epitaxy procedure, GaN epilayer is prominently improved with the assistance of nanotechnology, which demonstrates great application potential for high-efficiency TDD-sensitive optoelectronic and electronic devices.

  7. Development of GaN wafers for solid-state lighting via the ammonothermal method

    NASA Astrophysics Data System (ADS)

    Letts, Edward; Hashimoto, Tadao; Ikari, Masanori; Nojima, Yoshihiro

    2012-07-01

    In order for solid-state lighting to replace existing light bulbs, high power LEDs will be required to handle more current than conventional LEDs. When current densities in high power LEDs become comparable to that of Laser Diodes (LDs), GaN substrates will be critically useful for device reliability. Due to its significant scalability, the ammonothermal growth of bulk GaN could provide cost competitive wafers for high power LEDs. Our team has focused on developing the basic ammonothermal growth method in small 1” internal diameter prototype autoclaves capable of accommodating multiple crystals simultaneously. We have made considerable improvements in the crystal quality particularly in transparency and structural parameters. By optimizing the growth process we have improved the coloration and transparency of the crystals from a black/brown to semi-transparent yellow. We have improved the absorption coefficient at 450 nm from 30.5 cm-1 to 8 cm-1 yielding semi-transparent crystals. Currently, we can reliably achieve a full width half maximum (FWHM) of X-ray 002 reflection between 100 and 300 arcs. The crystals have a low dislocation density less than 10-6 cm-2 and are n-type with a resistivity of approximately ρ∼10-2 Ω cm. In this presentation we will discuss improvements that we have made to provide a more suitable substrate for future high power LEDs.

  8. GaN Device Processing

    SciTech Connect

    Pearton, S.J.; Ren, F.; Zolper, J.C.; Shul, R.J.

    1998-01-01

    Recent progress in the development of dry and wet etching techniques, implant doping and isolation, thermal processing, gate insulator technology and high reliability contacts is reviewed. Etch selectivities up to 10 for InN over AlN are possible in Inductively Coupled Plasmas using a Cl2/Ar chemistry, but in general selectivities for each binary nitride relative to each other are low ({lt} OR = 2) BECAUSE OF THE HIGH ION ENERGIES NEEDED TO INITIATE ETCHING. IMPROVED N-TYPE OHMIC CONTACT RESISTANCES ARE OBTAINED BY SELECTIVE AREA SI+ IMPLANTATION FOLLOWED BY VERY HIGH TEMPERATURE ({gt}1300 deg C) anneals in which the thermal budget is minimized and AlN encapsulation prevents GaN surface decomposition. Implant isolation is effective in GaN, AlGaN and AlInN, but marginal in InGaN. Candidate gate insulators for GaN include AlN, AlON and Ga(Gd)O(x), but interface state densities are still to high to realize state-of-the-art MIS devices.

  9. Characterization of Geometrically Necessary Dislocation Content with EBSD-Based Continuum Dislocation Microscopy

    NASA Astrophysics Data System (ADS)

    Ruggles, Timothy J.

    Modeling of plasticity is often hampered by the difficulty in accurately characterizing dislocation density on the microscale for real samples. It is particularly difficult to resolve measured dislocation content onto individual dislocation systems at the length scales most commonly of interest in plasticity studies. Traditionally, dislocation content is analyzed at the continuum level using the Nye tensor and the fundamental relation of continuum dislocation theory to interpret information measured by diffraction techniques, typically EBSD or High Resolution EBSD. In this work the established Nye-Kroner method for resolving measured geometrically necessary dislocation content onto individual slip systems is assessed and extended. Two new methods are also presented to relieve the ambiguity of the Nye-Kroner method. One of these methods uses modified classical dislocation equations to bypass the Nye-Kroner relation, and the other estimates the bulk dislocation density via the entry-wise one-norm of the Nye tensor. These methods are validated via a novel simulation of distortion fields around continuum fields of dislocation density based on classical lattice mechanics and then applied to actual HR-EBSD scans of a micro-indented single crystals of nickel and tantalum. Finally, a detailed analysis of the effect of the spacing between points in an EBSD scan (which is related to the step size of the numerical derivatives used in EBSD dislocation microscopy) on geometrically necessary dislocation measurements is conducted.

  10. Low-temperature preparation of GaN-SiO2 interfaces with low defect density. II. Remote plasma-assisted oxidation of GaN and nitrogen incorporation

    NASA Astrophysics Data System (ADS)

    Bae, Choelhwyi; Lucovsky, Gerald

    2004-11-01

    Low-temperature remote plasma-assisted oxidation and nitridation processes for interface formation and passivation have been extended from Si and SiC to GaN. The initial oxidation kinetics and chemical composition of thin interfacial oxide were determined from analysis of on-line Auger electron spectroscopy features associated with Ga, N, and O. The plasma-assisted oxidation process is self-limiting with power-law kinetics similar to those for the plasma-assisted oxidation of Si and SiC. Oxidation using O2/He plasma forms nearly pure GaOx, and oxidation using 1% N2O in N2 forms GaOxNy with small nitrogen content, ~4-7 at. %. The interface and dielectric layer quality was investigated using fabricated GaN metal-oxide-semiconductor capacitors. The lowest density of interface states was achieved with a two-step plasma-assisted oxidation and nitridation process before SiO2 deposition.

  11. Long wavelength GaN blue laser (400-490nm) development

    SciTech Connect

    DenBaars, S P; Abare, A; Sink, K; Kozodoy, P; Hansen, M; Bowers, J; Mishra, U; Coldren, L; Meyer, G

    2000-10-26

    Room temperature (RT) pulsed operation of blue nitride based multi-quantum well (MQW) laser diodes grown on c-plane sapphire substrates was achieved. Atmospheric pressure MOCVD was used to grow the active region of the device which consisted of a 10 pair In{sub 0.21}Ga{sub 0.79}N (2.5nm)/In{sub 0.07}Ga{sub 0.93}N (5nm) InGaN MQW. The threshold current density was reduced by a factor of 2 from 10 kA/cm{sup 2} for laser diodes grown on sapphire substrates to 4.8 kA/cm{sub 2} for laser diodes grown on lateral epitaxial overgrowth (LEO) GaN on sapphire. Lasing wavelengths as long as 425nm were obtained. LEDs with emission wavelengths as long as 500nm were obtained by increasing the Indium content. These results show that a reduction in nonradiative recombination from a reduced dislocation density leads to a higher internal quantum efficiency. Further research on GaN based laser diodes is needed to extend the wavelength to 490nm which is required for numerous bio-detection applications. The GaN blue lasers will be used to stimulate fluorescence in special dye molecules when the dyes are attached to specific molecules or microorganisms. Fluorescein is one commonly used dye molecule for chemical and biological warfare agent detection, and its optimal excitation wavelength is 490 nm. InGaN alloys can be used to reach this wavelength.

  12. Conductivity based on selective etch for GaN devices and applications thereof

    DOEpatents

    Zhang, Yu; Sun, Qian; Han, Jung

    2015-12-08

    This invention relates to methods of generating NP gallium nitride (GaN) across large areas (>1 cm.sup.2) with controlled pore diameters, pore density, and porosity. Also disclosed are methods of generating novel optoelectronic devices based on porous GaN. Additionally a layer transfer scheme to separate and create free-standing crystalline GaN thin layers is disclosed that enables a new device manufacturing paradigm involving substrate recycling. Other disclosed embodiments of this invention relate to fabrication of GaN based nanocrystals and the use of NP GaN electrodes for electrolysis, water splitting, or photosynthetic process applications.

  13. Point defects as a test ground for the local density approximation +U theory: Mn, Fe, and V{sub Ga} in GaN

    SciTech Connect

    Volnianska, O.; Zakrzewski, T.; Boguslawski, P.

    2014-09-21

    Electronic structure of the Mn and Fe ions and of the gallium vacancy V{sub Ga} in GaN was analysed within the GGA + U approach. First, the +U term was treated as a free parameter, and applied to p(N), d(Mn), and d(Fe). The band gap of GaN is reproduced for U(N) ≈ 4 eV. The electronic structure of defect states was found to be more sensitive to the value of U than that of the bulk states. Both the magnitude and the sign of the U-induced energy shifts of levels depend on occupancies, and thus on the defect charge state. The energy shifts also depend on the hybridization between defect and host states, and thus are different for different level symmetries. In the case of V{sub Ga}, these effects lead to stabilization of spin polarization and the “negative-U{sub eff}” behavior. The values of Us were also calculated using the linear response approach, which gives U(Fe) ≈ U(Mn) ≈ 4 eV. This reproduces well the results of previous hybrid functionals calculations. However, the best agreement with the experimental data is obtained for vanishing or even negative U(Fe) and U(Mn)

  14. Initial dislocation structure and dynamic dislocation multiplication in Mo single crystals

    SciTech Connect

    Hsiung, L M; Lassila, D H

    2000-03-22

    Initial dislocation structure in annealed high-purity Mo single crystals and deformation substructure in a crystal subjected to 1% compression have been examined and studied in order to investigate dislocation multiplication mechanisms in the early stages of plastic deformation. The initial dislocation density is in a range of 10{sup 6} {approx} 10{sup 7} cm{sup -2}, and the dislocation structure is found to contain many grown-in superjogs along dislocation lines. The dislocation density increases to a range of 10{sup 8} {approx} 10{sup 9} cm{sup -2}, and the average jog height is also found to increase after compressing for a total strain of 1%. It is proposed that the preexisting jogged screw dislocations can act as (multiple) dislocation multiplication sources when deformed under quasi-static conditions. Both the jog height and length of link segment (between jogs) can increase by stress-induced jog coalescence, which takes place via the lateral migration (drift) of superjogs driven by unbalanced line-tension partials acting on link segments of unequal lengths. Applied shear stress begins to push each link segment to precede dislocation multiplication when link length and jog height are greater than critical lengths. This dynamic dislocation multiplication source is subsequently verified by direct simulations of dislocation dynamics under stress to be crucial in the early stages of plastic deformation in Mo single crystals.

  15. Limiting factors of room-temperature nonradiative photoluminescence lifetime in polar and nonpolar GaN studied by time-resolved photoluminescence and slow positron annihilation techniques

    NASA Astrophysics Data System (ADS)

    Chichibu, S. F.; Uedono, A.; Onuma, T.; Sota, T.; Haskell, B. A.; DenBaars, S. P.; Speck, J. S.; Nakamura, S.

    2005-01-01

    Room-temperature nonradiative lifetime (τnr) of the near-band-edge excitonic photoluminescence (PL) peak in {0001} polar, (112¯0), (11¯00), and (001) nonpolar GaN was shown to increase with the decrease in density or size of Ga vacancies (VGa) and with the decrease in gross density of point defects including complexes, leading to the increase in the PL intensity. As the edge threading dislocation density decreased, density or size of VGa tended to decrease and τnr tended to increase. However, there existed remarkable exceptions. The results indicate that nonradiative recombination process is governed not by single point defects, but by certain defects introduced with the incorporation of VGa, such as VGa-defect complexes.

  16. Studies of electrically and recombination active centers in undoped GaN grown by OMVPE

    SciTech Connect

    Polyakov, A.Y.; Shin, M.; Skowronski, M.; Greve, D.W.; Govorkov, A.V.; Smirnov, N.B.

    1997-12-31

    Deep centers were studied in GaN samples grown by organometallic vapor phase epitaxy (OMVPE). Electron traps 0.2 eV and 0.5 eV below conduction band edge and 0.25 eV and 0.5-0.85 eV above the valence band edge were detected by means of deep levels transient spectroscopy (DLTS), photoelectron relaxation spectroscopy (PERS) and thermally simulated current spectroscopy (TSC). The photoconductivity at low temperature is shown to be persistent and the magnitude of photosensitivity is dependent on the way the samples are grown. Microcathodoluminescence (MCL) and electron beam induced current (EBIC) measurements indicate that the density of deep recombination centers near the dislocation walls between the misoriented GaN domains is lower than inside the domains. Spatially resolved PERS measurements show that the concentration of the 0.85 eV level is higher in the low angle grain boundary regions that produce bright contrast in EBIC and MCL.

  17. Comparison of ultraviolet APDs grown on free-standing GaN and sapphire substrates

    NASA Astrophysics Data System (ADS)

    Cicek, Erdem; Vashaei, Zahra; Bayram, Can; McClintock, Ryan; Razeghi, Manijeh; Ulmer, Melville P.

    2010-08-01

    There is a need for semiconductor-based ultraviolet photodetectors to support avalanche gain in order to realize better performance andmore effective compete with existing technologies. Wide bandgap III-Nitride semiconductors are the promising material system for the development of avalanche photodiodes (APDs) that could be a viable alternative to current bulky UV detectors such as photomultiplier tubes. In this paper, we review the current state-of-the-art in IIINitride visible-blind APDs, and present our latest results on GaN APDs grown on both conventional sapphire and low dislocation density free-standing c- and m-plane GaN substrates. Leakage current, gain, and single photon detection efficiency (SPDE) of these APDs were compared. The spectral response and Geiger-mode photon counting performance of UV APDs are studied under low photon fluxes, with single photon detection capabilities as much as 30% being demonstrated in smaller devices. Geiger-mode operation conditions are optimized for enhanced SPDE.

  18. High-quality Ga-rich AlGaN grown on trapezoidal patterned GaN template using super-short period AlN/GaN superlattices for rapid coalescence

    NASA Astrophysics Data System (ADS)

    Xiao, Ming; Zhang, Jincheng; Hao, Yue

    2017-04-01

    High quality crack-free Ga-rich Al26.1Ga73.9N film was grown on trapezoidal patterned GaN template (TPGT) by low-pressure metalorganic chemical vapor deposition. The super-short period AlN/GaN superlattices structure was used to grow AlGaN material instead of the direct growth method. We obtained large lateral to vertical growth rate ratio larger than 4.79. The growth rate of GaN layer was proved to be the decisive factor of the lateral to vertical growth rate ratio. Moreover, for AlGaN growth, we found that that the TPGT is more beneficial to suppression of crack and relaxation of biaxial tensile strain than planar GaN template. The obtained results demonstrate that, comparing with AlGaN grown on planar GaN template, the threading dislocation density in AlGaN grown on TPGT was reduced from 2×109 cm-2 to 2×108 cm-2.

  19. Electronic-grade GaN(0001)/Al{sub 2}O{sub 3}(0001) grown by reactive DC-magnetron sputter epitaxy using a liquid Ga target

    SciTech Connect

    Junaid, M.; Hsiao, C.-L.; Palisaitis, J.; Jensen, J.; Persson, P. O. A.; Hultman, L.; Birch, J.

    2011-04-04

    Electronic-grade GaN (0001) epilayers have been grown directly on Al{sub 2}O{sub 3} (0001) substrates by reactive direct-current-magnetron sputter epitaxy (MSE) using a liquid Ga sputtering target in an Ar/N{sub 2} atmosphere. The as-grown GaN epitaxial films exhibit low threading dislocation density on the order of {<=}10{sup 10} cm{sup -2} determined by transmission electron microscopy and modified Williamson-Hall plot. X-ray rocking curve shows narrow full-width at half maximum (FWHM) of 1054 arc sec of the 0002 reflection. A sharp 4 K photoluminescence peak at 3.474 eV with a FWHM of 6.3 meV is attributed to intrinsic GaN band edge emission. The high structural and optical qualities indicate that MSE-grown GaN epilayers can be used for fabricating high-performance devices without the need of any buffer layer.

  20. High-quality III-nitride films on conductive, transparent (2̅01)-oriented β-Ga2O3 using a GaN buffer layer.

    PubMed

    Muhammed, M M; Roldan, M A; Yamashita, Y; Sahonta, S-L; Ajia, I A; Iizuka, K; Kuramata, A; Humphreys, C J; Roqan, I S

    2016-07-14

    We demonstrate the high structural and optical properties of InxGa1-xN epilayers (0 ≤ x ≤ 23) grown on conductive and transparent (01)-oriented β-Ga2O3 substrates using a low-temperature GaN buffer layer rather than AlN buffer layer, which enhances the quality and stability of the crystals compared to those grown on (100)-oriented β-Ga2O3. Raman maps show that the 2″ wafer is relaxed and uniform. Transmission electron microscopy (TEM) reveals that the dislocation density reduces considerably (~4.8 × 10(7) cm(-2)) at the grain centers. High-resolution TEM analysis demonstrates that most dislocations emerge at an angle with respect to the c-axis, whereas dislocations of the opposite phase form a loop and annihilate each other. The dislocation behavior is due to irregular (01) β-Ga2O3 surface at the interface and distorted buffer layer, followed by relaxed GaN epilayer. Photoluminescence results confirm high optical quality and time-resolved spectroscopy shows that the recombination is governed by bound excitons. We find that a low root-mean-square average (≤1.5 nm) of InxGa1-xN epilayers can be achieved with high optical quality of InxGa1-xN epilayers. We reveal that (01)-oriented β-Ga2O3 substrate has a strong potential for use in large-scale high-quality vertical light emitting device design.

  1. High-quality III-nitride films on conductive, transparent (2̅01)-oriented β-Ga2O3 using a GaN buffer layer

    PubMed Central

    Muhammed, M. M.; Roldan, M. A.; Yamashita, Y.; Sahonta, S.-L.; Ajia, I. A.; Iizuka, K.; Kuramata, A.; Humphreys, C. J.; Roqan, I. S.

    2016-01-01

    We demonstrate the high structural and optical properties of InxGa1−xN epilayers (0 ≤ x ≤ 23) grown on conductive and transparent (01)-oriented β-Ga2O3 substrates using a low-temperature GaN buffer layer rather than AlN buffer layer, which enhances the quality and stability of the crystals compared to those grown on (100)-oriented β-Ga2O3. Raman maps show that the 2″ wafer is relaxed and uniform. Transmission electron microscopy (TEM) reveals that the dislocation density reduces considerably (~4.8 × 107 cm−2) at the grain centers. High-resolution TEM analysis demonstrates that most dislocations emerge at an angle with respect to the c-axis, whereas dislocations of the opposite phase form a loop and annihilate each other. The dislocation behavior is due to irregular (01) β-Ga2O3 surface at the interface and distorted buffer layer, followed by relaxed GaN epilayer. Photoluminescence results confirm high optical quality and time-resolved spectroscopy shows that the recombination is governed by bound excitons. We find that a low root-mean-square average (≤1.5 nm) of InxGa1−xN epilayers can be achieved with high optical quality of InxGa1−xN epilayers. We reveal that (01)-oriented β-Ga2O3 substrate has a strong potential for use in large-scale high-quality vertical light emitting device design. PMID:27412372

  2. High-quality III-nitride films on conductive, transparent (2̅01)-oriented β-Ga2O3 using a GaN buffer layer

    NASA Astrophysics Data System (ADS)

    Muhammed, M. M.; Roldan, M. A.; Yamashita, Y.; Sahonta, S.-L.; Ajia, I. A.; Iizuka, K.; Kuramata, A.; Humphreys, C. J.; Roqan, I. S.

    2016-07-01

    We demonstrate the high structural and optical properties of InxGa1‑xN epilayers (0 ≤ x ≤ 23) grown on conductive and transparent (01)-oriented β-Ga2O3 substrates using a low-temperature GaN buffer layer rather than AlN buffer layer, which enhances the quality and stability of the crystals compared to those grown on (100)-oriented β-Ga2O3. Raman maps show that the 2″ wafer is relaxed and uniform. Transmission electron microscopy (TEM) reveals that the dislocation density reduces considerably (~4.8 × 107 cm‑2) at the grain centers. High-resolution TEM analysis demonstrates that most dislocations emerge at an angle with respect to the c-axis, whereas dislocations of the opposite phase form a loop and annihilate each other. The dislocation behavior is due to irregular (01) β-Ga2O3 surface at the interface and distorted buffer layer, followed by relaxed GaN epilayer. Photoluminescence results confirm high optical quality and time-resolved spectroscopy shows that the recombination is governed by bound excitons. We find that a low root-mean-square average (≤1.5 nm) of InxGa1‑xN epilayers can be achieved with high optical quality of InxGa1‑xN epilayers. We reveal that (01)-oriented β-Ga2O3 substrate has a strong potential for use in large-scale high-quality vertical light emitting device design.

  3. High drain current density and reduced gate leakage current in channel-doped AlGaN /GaN heterostructure field-effect transistors with Al2O3/Si3N4 gate insulator

    NASA Astrophysics Data System (ADS)

    Maeda, Narihiko; Wang, Chengxin; Enoki, Takatomo; Makimoto, Toshiki; Tawara, Takehiko

    2005-08-01

    Channel-doped AlGaN /GaN heterostructure field-effect transistors (HFETs) with metal-insulator-semiconductor (MIS) structures have been fabricated to obtain the high drain current density and reduced gate leakage current. A thin bilayer dielectric of Al2O3(4nm)/Si3N4(1nm) was used as the gate insulator, to simultaneously take advantage of the high-quality interface between Si3N4 and AlGaN, and high resistivity and a high dielectric constant of Al2O3. A MIS HFET with a gate length of 1.5μm has exhibited a record high drain current density of 1.87A/mm at a gate voltage (Vg) of +3V, which is ascribed to a high applicable Vg and a very high two-dimensional electron gas (2DEG) density of 2.6×1013cm-2 in the doped channel. The gate leakage current was reduced by two or three orders of magnitude, compared with that in normal HFETs without a gate insulator. The transconductance (gm) was 168mS/mm, which is high in the category of the MIS structure. Channel-doped MIS HFETs fabricated have thus been proved to exhibit the high current density, reduced gate leakage current, and relatively high transconductance, hence, promising for high-power applications.

  4. The investigation of stress in freestanding GaN crystals grown from Si substrates by HVPE.

    PubMed

    Lee, Moonsang; Mikulik, Dmitry; Yang, Mino; Park, Sungsoo

    2017-08-17

    We investigate the stress evolution of 400 µm-thick freestanding GaN crystals grown from Si substrates by hydride vapour phase epitaxy (HVPE) and the in situ removal of Si substrates. The stress generated in growing GaN can be tuned by varying the thickness of the MOCVD AlGaN/AlN buffer layers. Micro Raman analysis shows the presence of slight tensile stress in the freestanding GaN crystals and no stress accumulation in HVPE GaN layers during the growth. Additionally, it is demonstrated that the residual tensile stress in HVPE GaN is caused only by elastic stress arising from the crystal quality difference between Ga- and N-face GaN. TEM analysis revealed that the dislocations in freestanding GaN crystals have high inclination angles that are attributed to the stress relaxation of the crystals. We believe that the understanding and characterization on the structural properties of the freestanding GaN crystals will help us to use these crystals for high-performance opto-electronic devices.

  5. Controlling of the electrical resistivity of GaN layer using AIN nucleation layer.

    PubMed

    Yi, Min-Su; Kim, Hyo Jung; Lee, Hyun Hwi

    2011-08-01

    The sheet resistance (Rs) of undoped GaN films on AIN/c-plane sapphire substrate was investigated. The Rs was strongly dependent on the AIN layer thickness and semi-insulating behavior was observed. To clarify the effect of crystalline property on Rs, the crystal structure of the GaN films has been studied using X-ray scattering and transmission electron microscopy. A compressive strain was introduced by the presence of AIN nucleation layer (NL) and was gradually relaxed as increasing AIN NL thickness. This relaxation produced more threading dislocations (TD) of edge-type. Moreover, the surface morphology of the GaN film was changed at thicker AIN layer condition, which was originated by the crossover from planar to island grains of AIN. Thus, rough surface might produce more dislocations. The edge and mixed dislocations propagating from the interface between the GaN film and the AIN buffer layer affected the electric resistance of GaN film.

  6. Crystallographically tilted and partially strain relaxed GaN grown on inclined {111} facets etched on Si(100) substrate

    NASA Astrophysics Data System (ADS)

    Ansah Antwi, K. K.; Soh, C. B.; Wee, Q.; Tan, Rayson J. N.; Yang, P.; Tan, H. R.; Sun, L. F.; Shen, Z. X.; Chua, S. J.

    2013-12-01

    High resolution X-ray diffractometry (HR-XRD), Photoluminescence, Raman spectroscopy, and Transmission electron microscope measurements are reported for GaN deposited on a conventional Si(111) substrate and on the {111} facets etched on a Si(100) substrate. HR-XRD reciprocal space mappings showed that the GaN(0002) plane is tilted by about 0.63° ± 0.02° away from the exposed Si{111} growth surface for GaN deposited on the patterned Si(100) substrate, while no observable tilt existed between the GaN(0002) and Si(111) planes for GaN deposited on the conventional Si(111) substrate. The ratio of integrated intensities of the yellow to near band edge (NBE) luminescence (IYL/INBE) was determined to be about one order of magnitude lower in the case of GaN deposited on the patterned Si(100) substrate compared with GaN deposited on the conventional Si(111) substrate. The Raman E2(high) optical phonon mode at 565.224 ± 0.001 cm-1 with a narrow full width at half maximum of 1.526 ± 0.002 cm-1 was measured, for GaN deposited on the patterned Si(100) indicating high material quality. GaN deposition within the trench etched on the Si(100) substrate occurred via diffusion and mass-transport limited mechanism. This resulted in a differential GaN layer thickness from the top (i.e., 1.8 μm) of the trench to the bottom (i.e., 0.3 μm) of the trench. Mixed-type dislocation constituted about 80% of the total dislocations in the GaN grown on the inclined Si{111} surface etched on Si(100).

  7. Crystallographically tilted and partially strain relaxed GaN grown on inclined (111) facets etched on Si(100) substrate

    SciTech Connect

    Ansah Antwi, K. K.; Soh, C. B.; Wee, Q.; Tan, Rayson J. N.; Tan, H. R.; Yang, P.; Sun, L. F.; Shen, Z. X.; Chua, S. J.

    2013-12-28

    High resolution X-ray diffractometry (HR-XRD), Photoluminescence, Raman spectroscopy, and Transmission electron microscope measurements are reported for GaN deposited on a conventional Si(111) substrate and on the (111) facets etched on a Si(100) substrate. HR-XRD reciprocal space mappings showed that the GaN(0002) plane is tilted by about 0.63° ± 0.02° away from the exposed Si(111) growth surface for GaN deposited on the patterned Si(100) substrate, while no observable tilt existed between the GaN(0002) and Si(111) planes for GaN deposited on the conventional Si(111) substrate. The ratio of integrated intensities of the yellow to near band edge (NBE) luminescence (I{sub YL}/I{sub NBE}) was determined to be about one order of magnitude lower in the case of GaN deposited on the patterned Si(100) substrate compared with GaN deposited on the conventional Si(111) substrate. The Raman E{sub 2}(high) optical phonon mode at 565.224 ± 0.001 cm{sup −1} with a narrow full width at half maximum of 1.526 ± 0.002 cm{sup −1} was measured, for GaN deposited on the patterned Si(100) indicating high material quality. GaN deposition within the trench etched on the Si(100) substrate occurred via diffusion and mass-transport limited mechanism. This resulted in a differential GaN layer thickness from the top (i.e., 1.8 μm) of the trench to the bottom (i.e., 0.3 μm) of the trench. Mixed-type dislocation constituted about 80% of the total dislocations in the GaN grown on the inclined Si(111) surface etched on Si(100)

  8. AlGaN/GaN high electron mobility transistors with a low sub-threshold swing on free-standing GaN wafer

    NASA Astrophysics Data System (ADS)

    Liu, Xinke; Gu, Hong; Li, Kuilong; Guo, Lunchun; Zhu, Deliang; Lu, Youming; Wang, Jianfeng; Kuo, Hao-Chung; Liu, Zhihong; Liu, Wenjun; Chen, Lin; Fang, Jianping; Ang, Kah-Wee; Xu, Ke; Ao, Jin-Ping

    2017-09-01

    This paper reported AlGaN/GaN high electron mobility transistors (HEMTs) with low sub-threshold swing SS on free-standing GaN wafer. High quality AlGaN/GaN epi-layer has been grown by metal-organic chemical vapor deposition (MOCVD) on free-standing GaN, small full-width hall maximum (FWHM) of 42.9 arcsec for (0002) GaN XRD peaks and ultralow dislocation density (˜104-105 cm-2) were obtained. Due to these extremely high quality material properties, the fabricated AlGaN/GaN HEMTs achieve a low SS (˜60 mV/decade), low hysteresis of 54 mV, and high peak electron mobility μeff of ˜1456 cm2V-1s-1. Systematic study of materials properties and device characteristics exhibits that GaN-on-GaN AlGaN/GaN HEMTs are promising candidate for next generation high power device applications.

  9. Dislocation core structures in (0001) InGaN

    SciTech Connect

    Rhode, S. L.; Sahonta, S.-L.; Kappers, M. J.; McAleese, C.; Humphreys, C. J.; Horton, M. K.; Haigh, S. J.; Pennycook, T. J.; Dusane, R. O.; Moram, M. A.

    2016-03-14

    Threading dislocation core structures in c-plane GaN and In{sub x}Ga{sub 1−x}N (0.057 ≤ x ≤ 0.20) films were investigated by aberration-corrected scanning transmission electron microscopy. a-type dislocations are unaffected by alloying with indium and have a 5/7-atom ring core structure in both GaN and In{sub x}Ga{sub 1−x}N. In contrast, the dissociation lengths of (a + c)-type dislocations are reduced, and new 7/4/9-atom ring and 7/4/8/5-atom ring core structures were observed for the dissociated (a + c)-type dislocations in In{sub x}Ga{sub 1−x}N, which is associated with the segregation of indium near (a + c)-type and c-type dislocation cores in In{sub x}Ga{sub 1−x}N, consistent with predictions from atomistic Monte Carlo simulations.

  10. Electron mobility in polarization-doped Al0-0.2GaN with a low concentration near 1017 cm-3

    NASA Astrophysics Data System (ADS)

    Zhu, Mingda; Qi, Meng; Nomoto, Kazuki; Hu, Zongyang; Song, Bo; Pan, Ming; Gao, Xiang; Jena, Debdeep; Xing, Huili Grace

    2017-05-01

    In this letter, carrier transport in graded AlxGa1-xN with a polarization-induced n-type doping as low as ˜1017 cm-3 is reported. The graded AlxGa1-xN is grown by metal organic chemical vapor deposition on a sapphire substrate, and a uniform n-type doping without any intentional doping is realized by linearly varying the Al composition from 0% to 20% over a thickness of 600 nm. A compensating center concentration of ˜1017 cm-3 was also estimated. A peak mobility of 900 cm2/V.s at room temperature is extracted at an Al composition of ˜7%, which represents the highest mobility achieved in n-Al0.07GaN with a carrier concentration of ˜1017 cm-3. A comparison between experimental data and theoretical models shows that, at this low doping concentration, both dislocation scattering and alloy scattering are significant in limiting electron mobility and that a dislocation density of <107 cm-2 is necessary to optimize mobility near 1016 cm-3. The findings in this study provide insights into key elements for achieving high mobility at low doping levels in GaN, a critical parameter in the design of novel power electronics taking advantage of polarization doping.

  11. Lateral subtalar dislocation.

    PubMed

    Sharda, Praveen; DuFosse, Julian

    2008-07-01

    Subtalar dislocations are rare in routine orthopedic practice. While many of these dislocations are a result of high-energy injuries such as fall from a height or traffic accidents, it is not uncommon for patients to present after slipping down a few stairs. Two types of dislocation have been described, medial and lateral. The type of dislocation is described according to the position of the foot. In lateral subtalar dislocation the head of talus is found medially and the calcaneus is dislocated laterally. The navicular may lie dorsolateral to the talus. The reverse is true of lateral dislocation. Medial dislocation has been referred to as "basketball foot" due to its preponderance in basketball players.4 The deciding factor is the inverted or everted position of the foot when the force is dissipated through the weak talonavicular and talocalcaneal ligaments. This article presents a case of an adult with lateral subtalar dislocation following a fall.

  12. Thermal effects in dislocation theory

    NASA Astrophysics Data System (ADS)

    Langer, J. S.

    2016-12-01

    The mechanical behaviors of polycrystalline solids are determined by the interplay between phenomena governed by two different thermodynamic temperatures: the configurational effective temperature that controls the density of dislocations, and the ordinary kinetic-vibrational temperature that controls activated depinning mechanisms and thus deformation rates. This paper contains a review of the effective-temperature theory and its relation to conventional dislocation theories. It includes a simple illustration of how these two thermal effects can combine to produce a predictive theory of spatial heterogeneities such as shear-banding instabilities. Its main message is a plea that conventional dislocation theories be reformulated in a thermodynamically consistent way so that the vast array of observed behaviors can be understood systematically.

  13. Effect of a Cooling Step Treatment on a High-Voltage GaN LED During ICP Dry Etching

    NASA Astrophysics Data System (ADS)

    Lin, Yen-Sheng; Hsiao, Sheng-Yu; Tseng, Chun-Lung; Shen, Ching-Hsing; Chiang, Jung-Sheng

    2017-02-01

    In this study, a lower dislocation density for a GaN surface and a reduced current path are observed at the interface of a SiO2 isolation sidewall, using high-resolution transmission electron microscopy. This is grown using a 3-min cooling step treatment during inductivity coupled plasma dry etching. The lower forward voltage is measured, the leakage current decreases from 53nA to 32nA, and the maximum output power increases from 354.8 W to 357.2 W for an input current of 30 mA. The microstructure and the optoelectronic properties of high-voltage light-emitting-diodes is proven to be affected by the cooling step treatment, which allows enough time to release the thermal energy of the SiO2 isolation well.

  14. Effect of pressure on the semipolar GaN (10-11) growth mode on patterned Si substrates

    NASA Astrophysics Data System (ADS)

    Liu, Jian-Ming; Zhang, Jie; Lin, Wen-Yu; Ye, Meng-Xin; Feng, Xiang-Xu; Zhang, Dong-Yan; Steve, Ding; Xu, Chen-Ke; Liu, Bao-Lin

    2015-05-01

    In this paper, we investigate the effect of pressure on the growth mode of high quality (10-11) GaN using an epitaxial lateral over growth (ELO) technique by metal organic chemical vapor deposition (MOCVD). Two pressure growth conditions, high pressure (HP) 1013 mbar and low pressure growth (LP) 500 mbar, are employed during growth. In the high pressure growth conditions, the crystal quality is improved by decreasing the dislocation and stack fault density in the strip connection locations. The room temperature photoluminescence measurement also shows that the light emission intensity increases three times using the HP growth condition compared with that using the LP growth conditions. In the low temperature (77 K) photoluminescence, the defects-related peaks are very obvious in the low pressure growth samples. This result also indicates that the crystal quality is improved using the high pressure growth conditions. Project support by the National High Technology Research and Development Program of China (Green Laser).

  15. Dislocation motion and instability

    NASA Astrophysics Data System (ADS)

    Zhu, Yichao; Chapman, Stephen Jonathan; Acharya, Amit

    2013-08-01

    The Peach-Koehler expression for the stress generated by a single (non-planar) curvilinear dislocation is evaluated to calculate the dislocation self stress. This is combined with a law of motion to give the self-induced motion of a general dislocation curve. A stability analysis of a rectilinear, uniformly translating dislocation is then performed. The dislocation is found to be susceptible to a helical instability, with the maximum growth rate occurring when the dislocation is almost, but not exactly, pure screw. The non-linear evolution of the instability is determined numerically, and implications for slip band formation and non-Schmid behavior in yielding are discussed.

  16. High-resistivity GaN buffer templates and their optimization for GaN-based HFETs

    NASA Astrophysics Data System (ADS)

    Hubbard, S. M.; Zhao, G.; Pavlidis, D.; Sutton, W.; Cho, E.

    2005-11-01

    High-resistance (HR) GaN templates for AlGaN/GaN heterojunction field effect transistor (HFET) applications were grown using organometallic vapor phase epitaxy. The GaN sheet resistance was tuned using final nucleation layer (NL) annealing temperature and NL thickness. Using an annealing temperature of 1033 °C and NL thickness of 26 nm, GaN with sheet resistance of 10 10 Ω/sq was achieved, comparable to that of Fe-doped GaN. Material characterization results show that the high-resistance GaN is achieved due to compensating acceptor levels that may be introduced through edge-type threading dislocations. Optimization of annealing temperature and NL thickness provided a means to maximize GaN sheet resistance without significantly degrading material quality. In situ laser reflectance was used to correlate the NL properties to sheet resistance and material quality, providing a figure of merit for expected sheet resistance. AlGaN/GaN HFET layers grown using HR GaN templates with R of 10 10 Ω/sq gave surface and interface roughness of 14 and 7 Å, respectively. The 2DEG Hall mobility and sheet charge of HFETs grown using HR GaN templates was comparable to similar layers grown using unintentionally doped (UID) GaN templates.

  17. Anteromedial subtalar dislocation.

    PubMed

    Stafford, Harry; Boggess, Blake; Toth, Alison; Berkoff, David

    2013-01-25

    Subtalar dislocation is the simultaneous dislocation of the talocalcaneal and talonavicular joints of the foot, typically caused by falls from heights, twisting leg injuries and motor vehicle accidents. The dislocation can occur medially, lateral, anterior or posterior, but most commonly occurs from inversion injury producing a medial dislocation. These dislocations may be accompanied by fractures. Careful physical examination must be performed to assess for neurovascular compromise. Most subtalar dislocations can be treated with closed reduction under sedation. However, if the dislocation is associated with an open fracture it may require reduction in the operating room. Treatment should include postreduction plain x-ray and CT scan to evaluate for proper alignment and for fractures. This article presents a case of medial subtalar dislocation in a 23-year-old football player.

  18. Search for Dislocation Free Helium 4 Crystals.

    PubMed

    Souris, F; Fefferman, A D; Haziot, A; Garroum, N; Beamish, J R; Balibar, S

    The giant plasticity of [Formula: see text]He crystals has been explained as a consequence of the large mobility of their dislocations. Thus, the mechanical properties of dislocation free crystals should be quite different from those of usual ones. In 1996-1998, Ruutu et al. published crystal growth studies showing that, in their helium 4 crystals, the density of screw dislocations along the c-axis was less than 100 per cm[Formula: see text], sometimes zero. We have grown helium 4 crystals using similar growth speeds and temperatures, and extracted their dislocation density from their mechanical properties. We found dislocation densities that are in the range of 10[Formula: see text]-10[Formula: see text] per cm[Formula: see text], that is several orders of magnitude larger than Ruutu et al. Our tentative interpretation of this apparent contradiction is that the two types of measurements are somewhat indirect and concern different types of dislocations. As for the dislocation nucleation mechanism, it remains to be understood.

  19. Effect of dislocations on helium retention in deformed pure iron

    NASA Astrophysics Data System (ADS)

    Gong, Y. H.; Cao, X. Z.; Jin, S. X.; Lu, E. Y.; Hu, Y. C.; Zhu, T.; Kuang, P.; Xu, Q.; Wang, B. Y.

    2016-12-01

    The effects of dislocations created by deformation on helium retention in pure iron, including the helium atoms diffusion along the dislocation line and desorption from dislocation trapping sites, were investigated. The dislocation defect was introduced in specimens by cold-rolling, and then 5 keV helium ions were implanted into the deformed specimens. Slow positron beam technology and thermal desorption spectroscopy were used to investigate the evolution of dislocation defects and the desorption behavior of helium atoms under influence of dislocation. The behaviors of S-E, W-E and S-W plots indicate clearly that lots of helium atoms remain in the deformed specimen and helium atoms combining with dislocation change the distribution of electron density. The helium desorption plot indicates that dislocation accelerates helium desorption at 293 K-600 K and facilitates helium dissociation from HenVm (n/m = 1.8) cluster.

  20. Dislocation core radii near elastic stability limits

    NASA Astrophysics Data System (ADS)

    Sawyer, C. A.; Morris, J. W., Jr.; Chrzan, D. C.

    2013-04-01

    Recent studies of transition metal alloys with compositions that place them near their limits of elastic stability [e.g., near the body-centered-cubic (BCC) to hexagonal-close-packed (HCP) transition] suggest interesting behavior for the dislocation cores. Specifically, the dislocation core size is predicted to diverge as the stability limit is approached. Here a simple analysis rooted in elasticity theory and the computation of ideal strength is used to analyze this divergence. This analysis indicates that dislocation core radii should diverge as the elastic limits of stability are approached in the BCC, HCP, and face-centered-cubic (FCC) structures. Moreover, external stresses and dislocation-induced stresses also increase the core radii. Density functional theory based total-energy calculations are combined with anisotropic elasticity theory to compute numerical estimates of dislocation core radii.

  1. High temperature stable WSi{sub x} ohmic contacts on GaN

    SciTech Connect

    Pearton, S.J.; Donovan, S.M.; Abernathy, C.R.; Ren, F.; Zolper, J.C.; Cole, M.W.; Zeitouny, A.; Eizenberg, M.; Shul, R.J.

    1998-06-01

    The authors have sputter-deposited 500--1200{angstrom} thick WSi{sub 0.45} metallization onto n{sup +} GaN (n{ge}10{sup 19}cm{sup {minus}3}) doped either during MOCVD growth or by direct Si{sup +} ion implantation (5{times}10{sup 15}cm{sup {minus}2}, 100 keV) activated by RTA at 1,100 C for 30 secs. In the epi samples R{sub C} values of {approximately}10{sup {minus}14}{Omega}cm{sup 2} were obtained, and were stable to {approximately}1000 C. The annealing treatments up to 600 C had little effect on the WSi{sub x}/GaN interface, but the {beta}-W{sub 2}N phase formed between 700--800 C, concomitant with a strong reduction in near-surface crystalline defects in the GaN. Spiking of the metallization down the threading and misfit dislocations was observed at 800 C, extending >5,000{angstrom} in some cases. This can create junction shorting in bipolar or thyristor devices, R{sub C} values of <10{sup {minus}6}{Omega}cm{sup 2} were obtained on the implanted samples for 950 C annealing, with values of after 1050 C anneals. The lower R{sub C} values compared to epi samples appear to be a result of the higher peak doping achieved. The authors observed wide spreads in R{sub C} values over a wafer surface, with the values on 950 C annealed material ranging from 10{sup {minus}7} to 10{sup {minus}4}{Omega}cm{sup 2}. There appear to be highly nonuniform doping regions in the GaN, perhaps associated with the high defect density in heteroepitaxial material, and this may contribute to the variations observed. They believe that near-surface stoichiometry is variable in much of the GaN currently produced due to the relative ease of preferential N{sub 2} loss and the common use of H{sub 2}-containing growth (and cool-down) ambients. Finally, the ohmic contact behavior of WSi{sub x} on abrupt and graded composition In{sub x}Al{sub 1{minus}x}N layers has been studied as a function of growth temperature, InN mole fraction (x = 0.5--1) and post WSi{sub x} deposition annealing treatment.

  2. Statistics of dislocation pinning at localized obstacles

    SciTech Connect

    Dutta, A.; Bhattacharya, M. Barat, P.

    2014-10-14

    Pinning of dislocations at nanosized obstacles like precipitates, voids, and bubbles is a crucial mechanism in the context of phenomena like hardening and creep. The interaction between such an obstacle and a dislocation is often studied at fundamental level by means of analytical tools, atomistic simulations, and finite element methods. Nevertheless, the information extracted from such studies cannot be utilized to its maximum extent on account of insufficient information about the underlying statistics of this process comprising a large number of dislocations and obstacles in a system. Here, we propose a new statistical approach, where the statistics of pinning of dislocations by idealized spherical obstacles is explored by taking into account the generalized size-distribution of the obstacles along with the dislocation density within a three-dimensional framework. Starting with a minimal set of material parameters, the framework employs the method of geometrical statistics with a few simple assumptions compatible with the real physical scenario. The application of this approach, in combination with the knowledge of fundamental dislocation-obstacle interactions, has successfully been demonstrated for dislocation pinning at nanovoids in neutron irradiated type 316-stainless steel in regard to the non-conservative motion of dislocations. An interesting phenomenon of transition from rare pinning to multiple pinning regimes with increasing irradiation temperature is revealed.

  3. Ultraviolet light-absorbing and emitting diodes consisting of a p-type transparent-semiconducting NiO film deposited on an n-type GaN homoepitaxial layer

    NASA Astrophysics Data System (ADS)

    Nakai, Hiroshi; Sugiyama, Mutsumi; Chichibu, Shigefusa F.

    2017-05-01

    Gallium nitride (GaN) and related (Al,Ga,In)N alloys provide practical benefits in the production of light-emitting diodes (LEDs) and laser diodes operating in ultraviolet (UV) to green wavelength regions. However, obtaining low resistivity p-type AlN or AlGaN of large bandgap energies (Eg) is a critical issue in fabricating UV and deep UV-LEDs. NiO is a promising candidate for useful p-type transparent-semiconducting films because its Eg is 4.0 eV and it can be doped into p-type conductivity of sufficiently low resistivity. By using these technologies, heterogeneous junction diodes consisting of a p-type transparent-semiconducting polycrystalline NiO film on an n-type single crystalline GaN epilayer on a low threading-dislocation density, free-standing GaN substrate were fabricated. The NiO film was deposited by using the conventional RF-sputtering method, and the GaN homoepitaxial layer was grown by metalorganic vapor phase epitaxy. They exhibited a significant photovoltaic effect under UV light and also exhibited an electroluminescence peak at 3.26 eV under forward-biased conditions. From the conduction and valence band (EV) discontinuities, the NiO/GaN heterointerface is assigned to form a staggered-type (TYPE-II) band alignment with the EV of NiO higher by 2.0 eV than that of GaN. A rectifying property that is consistent with the proposed band diagram was observed in the current-voltage characteristics. These results indicate that polycrystalline NiO functions as a hole-extracting and injecting layer of UV optoelectronic devices.

  4. 'Inverse' temporomandibular joint dislocation.

    PubMed

    Alemán Navas, R M; Martínez Mendoza, M G

    2011-08-01

    Temporomandibular joint (TMJ) dislocation can be classified into four groups (anterior, posterior, lateral, and superior) depending on the direction of displacement and the location of the condylar head. All the groups are rare except for anterior dislocation. 'Inverse' TMJ dislocation is a bilateral anterior and superior dislocation with impaction of the mandible over the maxilla; to the authors' knowledge only two cases have previously been reported in the literature. Inverse TMJ dislocation has unique clinical and radiographic findings, which are described for this case. Copyright © 2011 International Association of Oral and Maxillofacial Surgeons. Published by Elsevier Ltd. All rights reserved.

  5. Defect reduction in (11-20) a-plane GaN by two step epitaxiallateral overgrowth

    SciTech Connect

    Ni, X.; Ozgur, U.; Fu, Y.; Biyikii, N.; Morkoc, H.; Liliental-Weber, Z.

    2006-11-25

    We report a two-step growth method to obtain uniformly coalesced epitaxial lateral overgrown a-plane GaN by metal-organic chemical vapor deposition (MOCVD). By obtaining a large wing height to width aspect ratio in the first step followed by enhanced lateral growth in the second step via controlling the growth temperature, we reduced the tilt angle between the advancing Ga-polar and N-polar wings for improved properties. Transmission electron microscopy (TEM) showed that the threading dislocation density in the wing area was 1.0 x 10{sup 8}cm{sup -2}, more than two orders of magnitude lower than that in the window area (4.2 x 10{sup 10} cm{sup -2}). However, a high density of basal stacking faults, 1.2 x 10{sup 4} cm{sup -1}, was still observed in the wing area. Near field scanning optical microscopy (NSOM) at room temperature revealed that the luminescence was mainly from the wing regions with very little contribution from the windows and meeting fronts. These observations suggest that due to significant reduction of threading dislocations radiative recombination is enhanced in the wings.

  6. Electrochemical characterization of GaN surface states

    NASA Astrophysics Data System (ADS)

    Winnerl, Andrea; Garrido, Jose A.; Stutzmann, Martin

    2017-07-01

    In this work, we present a systematic study of the electrochemical properties of metal-organic chemical vapor deposition and hybrid vapor phase epitaxy grown n-type GaN in aqueous electrolytes. For this purpose, we perform cyclic voltammetry and impedance spectroscopy measurements over a wide range of potentials and frequencies, using a pure aqueous electrolyte and adding two different types of redox couples, as well as applying different surface treatments to the GaN electrodes. For Ga-polar GaN electrodes, the charge transfer to an electrolyte is dominated by surface states, which are not related to dislocations and are independent of the specific growth technique. These surface states can be modified by the surface treatment; they are generated by etching in HCl and are passivated by oxidation. Different surface defect states are present on N-polar GaN electrodes which do not significantly contribute to the charge transfer across the GaN/electrolyte interface.

  7. Spin and phase relaxation dynamics in GaN and GaN/AlGaN quantum wells (Presentation Recording)

    NASA Astrophysics Data System (ADS)

    Gallart, Mathieu; Ziegler, Marc; Hönerlage, Bernd H.; Gilliot, Pierre; Feltin, Eric; Carlin, Jean-François; Butté, Raphaël.; Grandjean, Nicolas

    2015-09-01

    By performing time-resolved optical non-degenerate pump-probe experiments, we study the relaxation dynamics of spin-polarized excitons in wurtzite epitaxial GaN and in nitride nanostructures. Those materials are indeed promising candidates for spintronic applications because of their weak spin-orbit coupling and large exciton binding energy (~ 17 meV and ~ 26meV in bulk GaN, respectively). In epilayers, we show that the high density of dislocations increases dramatically the spin relaxation of electrons and holes through the defect assisted Elliott-Yafet mechanism. That makes the exciton dephasing time very short. In high quality GaN/AlGaN quantum wells, both the exciton-spin lifetime S and the exciton dephasing-time T2 were determined via pump-probe spectroscopy using polarized laser pulses and time-resolved four wave-mixing experiments. The evolution of both quantities with temperature shows that spin relaxation occurs in the motional narrowing regime up to 80 K. Above this threshold, the thermal energy becomes large enough for excitons to escape from the QW. Such measurements demonstrate that GaN-based heterostructures can reach a very high degree of control that was previously mostly restricted to conventional III-V semiconductors and more specifically to the arsenide family.

  8. The influence of the dislocation distribution heterogeneity degree on the formation of a non-misoriented dislocation cell substructures in f.c.c. metals

    NASA Astrophysics Data System (ADS)

    Cherepanov, D. N.; Selivanikova, O. V.; Matveev, M. V.

    2016-06-01

    Dislocation loops emitted by Frank-Reed source during crossing dislocations of the non-coplanar slip systems are accumulates jogs on the own dislocation line, resulting in the deceleration of the segments of dislocation loops with high jog density. As a result, bending around of the slowed segments the formation of dynamic dipoles in the shear zone occurs. In the present paper we consider formation mechanism of non-misoriented dislocation cell substructure during plastic deformation of f.c.c. metals and conclude that the increase in the degree heterogeneity of dislocation distribution leads to an increase in the jog density and reduce the mean value of arm dynamic dipoles.

  9. Interactions between glide dislocations and parallel interfacial dislocations in nanoscale strained layers

    SciTech Connect

    Akasheh, F.; Zbib, H. M.; Hirth, J. P.; Hoagland, R. G.; Misra, A.

    2007-08-01

    Plastic deformation in nanoscale multilayered structures is thought to proceed by the successive propagation of single dislocation loops at the interfaces. Based on this view, we simulate the effect of predeposited interfacial dislocation on the stress (channeling stress) needed to propagate a new loop parallel to existing loops. Single interfacial dislocations as well as finite parallel arrays are considered in the computation. When the gliding dislocation and the predeposited interfacial array have collinear Burgers vectors, the channeling stress increases monotonically as the density of dislocations in the array increases. In the case when their Burgers vectors are inclined at 60 deg. , a regime of perfect plasticity is observed which can be traced back to an instability in the flow stress arising from the interaction between the glide dislocation and a single interfacial dislocation dipole. This interaction leads to a tendency for dislocations of alternating Burgers vectors to propagate during deformation leading to nonuniform arrays. Inclusion of these parallel interactions in the analysis improves the strength predictions as compared with the measured strength of a Cu-Ni multilayered system in the regime where isolated glide dislocation motion controls flow, but does not help to explain the observed strength saturation when the individual layer thickness is in the few nanometer range.

  10. Dislocation dynamics simulations of interactions between gliding dislocations and radiation induced prismatic loops in zirconium

    NASA Astrophysics Data System (ADS)

    Drouet, Julie; Dupuy, Laurent; Onimus, Fabien; Mompiou, Frédéric; Perusin, Simon; Ambard, Antoine

    2014-06-01

    The mechanical behavior of Pressurized Water Reactor fuel cladding tubes made of zirconium alloys is strongly affected by neutron irradiation due to the high density of radiation induced dislocation loops. In order to investigate the interaction mechanisms between gliding dislocations and loops in zirconium, a new nodal dislocation dynamics code, adapted to Hexagonal Close Packed metals, has been used. Various configurations have been systematically computed considering different glide planes, basal or prismatic, and different characters, edge or screw, for gliding dislocations with -type Burgers vectors. Simulations show various interaction mechanisms such as (i) absorption of a loop on an edge dislocation leading to the formation of a double super-jog, (ii) creation of a helical turn, on a screw dislocation, that acts as a strong pinning point or (iii) sweeping of a loop by a gliding dislocation. It is shown that the clearing of loops is more favorable when the dislocation glides in the basal plane than in the prismatic plane explaining the easy dislocation channeling in the basal plane observed after neutron irradiation by transmission electron microscopy.

  11. Identification of the primary compensating defect level responsible for determining blocking voltage of vertical GaN power diodes

    SciTech Connect

    King, M. P.; Kaplar, R. J.; Dickerson, J. R.; Lee, S. R.; Allerman, A. A.; Crawford, M. H.; Fischer, A. J.; Marinella, M. J.; Flicker, J. D.; Fleming, R. M.; Kizilyalli, I. C.; Aktas, O.; Armstrong, A. M.

    2016-10-31

    Electrical performance and characterization of deep levels in vertical GaN P-i-N diodes grown on low threading dislocation density (~104 –106 cm–2) bulk GaN substrates are investigated. The lightly doped n drift region of these devices is observed to be highly compensated by several prominent deep levels detected using deep level optical spectroscopy at Ec-2.13, 2.92, and 3.2 eV. A combination of steady-state photocapacitance and lighted capacitance-voltage profiling indicates the concentrations of these deep levels to be Nt = 3 × 1012, 2 × 1015, and 5 × 1014 cm–3, respectively. The Ec-2.92 eV level is observed to be the primary compensating defect in as-grown n-type metal-organic chemical vapor deposition GaN, indicating this level acts as a limiting factor for achieving controllably low doping. The device blocking voltage should increase if compensating defects reduce the free carrier concentration of the n drift region. Understanding the incorporation of as-grown and native defects in thick n-GaN is essential for enabling large VBD in the next-generation wide-bandgap power semiconductor devices. Furthermore, controlling the as-grown defects induced by epitaxial growth conditions is critical to achieve blocking voltage capability above 5 kV.

  12. Hydrogen diffusion in the elastic fields of dislocations in iron

    SciTech Connect

    Sivak, A. B. Sivak, P. A.; Romanov, V. A.; Chernov, V. M.

    2016-12-15

    The effect of dislocation stress fields on the sink efficiency thereof is studied for hydrogen interstitial atoms at temperatures of 293 and 600 K and at a dislocation density of 3 × 10{sup 14} m{sup –2} in bcc iron crystal. Rectilinear full screw and edge dislocations in basic slip systems 〈111〉(110), 〈111〉(112), 〈100〉(100), and 〈100〉(110) are considered. Diffusion of defects is simulated by means of the object kinetic Monte Carlo method. The energy of interaction between defects and dislocations is calculated using the anisotropic theory of elasticity. The elastic fields of dislocations result in a less than 25% change of the sink efficiency as compared to the noninteracting linear sink efficiency at a room temperature. The elastic fields of edge dislocations increase the dislocation sink efficiency, whereas the elastic fields of screw dislocations either decrease this parameter (in the case of dislocations with the Burgers vector being 1/2〈111〉) or do not affect it (in the case of dislocations with the Burgers vector being 〈100〉). At temperatures above 600 K, the dislocations affect the behavior of hydrogen in bcc iron mainly owing to a high binding energy between the hydrogen atom and dislocation cores.

  13. Hydrogen diffusion in the elastic fields of dislocations in iron

    NASA Astrophysics Data System (ADS)

    Sivak, A. B.; Sivak, P. A.; Romanov, V. A.; Chernov, V. M.

    2016-12-01

    The effect of dislocation stress fields on the sink efficiency thereof is studied for hydrogen interstitial atoms at temperatures of 293 and 600 K and at a dislocation density of 3 × 1014 m-2 in bcc iron crystal. Rectilinear full screw and edge dislocations in basic slip systems <111>{110}, <111>{112}, <100>{100}, and <100>{110} are considered. Diffusion of defects is simulated by means of the object kinetic Monte Carlo method. The energy of interaction between defects and dislocations is calculated using the anisotropic theory of elasticity. The elastic fields of dislocations result in a less than 25% change of the sink efficiency as compared to the noninteracting linear sink efficiency at a room temperature. The elastic fields of edge dislocations increase the dislocation sink efficiency, whereas the elastic fields of screw dislocations either decrease this parameter (in the case of dislocations with the Burgers vector being 1/2<111>) or do not affect it (in the case of dislocations with the Burgers vector being <100>). At temperatures above 600 K, the dislocations affect the behavior of hydrogen in bcc iron mainly owing to a high binding energy between the hydrogen atom and dislocation cores.

  14. Role of Dislocation in InGaN Phase Separation

    NASA Astrophysics Data System (ADS)

    Sugahara, Tomoya; Hao, Maosheng; Wang, Tao; Nakagawa, Daisuke; Naoi, Yoshiki; Nishino, Katsusi; Sakai, Shiro

    1998-10-01

    The role of dislocation for luminescence in InGaN grown on sapphire substrateby metal organic chemical vapor deposition (MOCVD) method was investigated by cathodoluminescence (CL) and atomic force microscopy (AFM). The CL emission area and dark spots between InGaN and GaN layers in InGaN/GaN single quantum well (SQW) and multiple quantum well (MQW) structures showed completely one to one correspondence. These results indicate that dislocations in InGaN work as non-radiative recombination centers. Furthermore it was confirmed that the phase separation in InGaN is caused by spiral growth due to mixed dislocations, and such a growth mechanism is discussed.

  15. Phonon assignments in GaN bulk

    NASA Astrophysics Data System (ADS)

    Kunert, H. W.

    2004-07-01

    The measured phonon-density of states of bulk GaN by time-of-flight neutron spectroscopy has been recently reported by Nipko et al. [CITE]. The authors have also calculated the true partial and total DOS as well as the phonon dispersion curves along major symmetry directions in the Brillouin zone. However, the group-theoretical phonon assignments have not been provided. Based on calculated symmetry allowed modes spanned by displacement representation and on the derived connectivity relations along the major directions in the Brillouin zone we have assigned Nipko's phonon dispersion curves to irreducible representations (species) of the C^46v (P63mc) space group of GaN.

  16. Site controlled red-yellow-green light emitting InGaN quantum discs on nano-tipped GaN rods

    NASA Astrophysics Data System (ADS)

    Conroy, M.; Li, H.; Kusch, G.; Zhao, C.; Ooi, B.; Edwards, P. R.; Martin, R. W.; Holmes, J. D.; Parbrook, P. J.

    2016-05-01

    We report a method of growing site controlled InGaN multiple quantum discs (QDs) at uniform wafer scale on coalescence free ultra-high density (>80%) nanorod templates by metal organic chemical vapour deposition (MOCVD). The dislocation and coalescence free nature of the GaN space filling nanorod arrays eliminates the well-known emission problems seen in InGaN based visible light sources that these types of crystallographic defects cause. Correlative scanning transmission electron microscopy (STEM), energy-dispersive X-ray (EDX) mapping and cathodoluminescence (CL) hyperspectral imaging illustrates the controlled site selection of the red, yellow and green (RYG) emission at these nano tips. This article reveals that the nanorod tips' broad emission in the RYG visible range is in fact achieved by manipulating the InGaN QD's confinement dimensions, rather than significantly increasing the In%. This article details the easily controlled method of manipulating the QDs dimensions producing high crystal quality InGaN without complicated growth conditions needed for strain relaxation and alloy compositional changes seen for bulk planar GaN templates.We report a method of growing site controlled InGaN multiple quantum discs (QDs) at uniform wafer scale on coalescence free ultra-high density (>80%) nanorod templates by metal organic chemical vapour deposition (MOCVD). The dislocation and coalescence free nature of the GaN space filling nanorod arrays eliminates the well-known emission problems seen in InGaN based visible light sources that these types of crystallographic defects cause. Correlative scanning transmission electron microscopy (STEM), energy-dispersive X-ray (EDX) mapping and cathodoluminescence (CL) hyperspectral imaging illustrates the controlled site selection of the red, yellow and green (RYG) emission at these nano tips. This article reveals that the nanorod tips' broad emission in the RYG visible range is in fact achieved by manipulating the InGaN QD

  17. Analogies between continuum dislocation theory, continuum mechanics and fluid mechanics

    NASA Astrophysics Data System (ADS)

    Silbermann, C. B.; Ihlemann, J.

    2017-03-01

    Continuum Dislocation Theory (CDT) relates gradients of plastic deformation in crystals with the presence of geometrically necessary dislocations. Interestingly, CDT shows striking analogies to other branches of continuum mechanics. The present contribution demonstrates this on two essential kinematical quantities which reflect tensorial dislocation properties: the (resultant) Burgers vector and the dislocation density tensor. First, the limiting process for the (resultant) Burgers vector from an integral to a local quantity is performed analogously to the limiting process from the force vector to the traction vector. By evaluating the balance of forces on a tetrahedral volume element, Cauchy found his famous formula relating traction vector and stress tensor. It is shown how this procedure may be adopted to a continuously dislocated tetrahedron. Here, the conservation of Burger’s vector implicates the introduction of the dislocation density tensor. Second, analogies between the plastic flow of a continuously dislocated solid and the liquid flow of a fluid are highlighted: the resultant Burgers vector of a dislocation ensemble plays a similar role as the (resultant) circulation of a vortex tube. Moreover, both vortices within flowing fluids and dislocations within deforming solids induce discontinuities in the velocity field and the plastic distortion field, respectively. Beyond the analogies, some peculiar properties of the dislocation density tensor are presented as well.

  18. Improving optical performance of GaN nanowires grown by selective area growth homoepitaxy: Influence of substrate and nanowire dimensions

    NASA Astrophysics Data System (ADS)

    Aseev, P.; Gačević, Ž.; Torres-Pardo, A.; González-Calbet, J. M.; Calleja, E.

    2016-06-01

    Series of GaN nanowires (NW) with controlled diameters (160-500 nm) and heights (420-1100 nm) were homoepitaxially grown on three different templates: GaN/Si(111), GaN/AlN/Si(111), and GaN/sapphire(0001). Transmission electron microscopy reveals a strong influence of the NW diameter on dislocation filtering effect, whereas photoluminescence measurements further relate this effect to the GaN NWs near-bandgap emission efficiency. Although the templates' quality has some effects on the GaN NWs optical and structural properties, the NW diameter reduction drives the dislocation filtering effect to the point where a poor GaN template quality becomes negligible. Thus, by a proper optimization of the homoepitaxial GaN NWs growth, the propagation of dislocations into the NWs can be greatly prevented, leading to an exceptional crystal quality and a total dominance of the near-bandgap emission over sub-bandgap, defect-related lines, such as basal stacking faults and so called unknown exciton (UX) emission. In addition, a correlation between the presence of polarity inversion domain boundaries and the UX emission lines around 3.45 eV is established.

  19. Improving optical performance of GaN nanowires grown by selective area growth homoepitaxy: Influence of substrate and nanowire dimensions

    SciTech Connect

    Aseev, P. E-mail: gacevic@isom.upm.es; Gačević, Ž. E-mail: gacevic@isom.upm.es; Calleja, E.

    2016-06-20

    Series of GaN nanowires (NW) with controlled diameters (160–500 nm) and heights (420–1100 nm) were homoepitaxially grown on three different templates: GaN/Si(111), GaN/AlN/Si(111), and GaN/sapphire(0001). Transmission electron microscopy reveals a strong influence of the NW diameter on dislocation filtering effect, whereas photoluminescence measurements further relate this effect to the GaN NWs near-bandgap emission efficiency. Although the templates' quality has some effects on the GaN NWs optical and structural properties, the NW diameter reduction drives the dislocation filtering effect to the point where a poor GaN template quality becomes negligible. Thus, by a proper optimization of the homoepitaxial GaN NWs growth, the propagation of dislocations into the NWs can be greatly prevented, leading to an exceptional crystal quality and a total dominance of the near-bandgap emission over sub-bandgap, defect-related lines, such as basal stacking faults and so called unknown exciton (UX) emission. In addition, a correlation between the presence of polarity inversion domain boundaries and the UX emission lines around 3.45 eV is established.

  20. The length change of a dislocation junction in FCC-single crystals under stress

    NASA Astrophysics Data System (ADS)

    Kurinnaya, Raisa; Zgolich, Marina; Starenchenko, Vladimir; Sadritdinova, Gulnora

    2016-01-01

    The product of dislocation reactions among dislocations of non-coplanar slip systems are dislocation junctions. The paper presents the study on the length change of dislocation junctions under stress. It is revealed that dislocation junctions can be destructed by merging of triple dislocation nodes at certain inclination angles of the glide dislocation and the forest dislocation to the junction line and the corresponding lengths of free segments of intersecting dislocations. Dislocation junctions formed at an arbitrary intersection of segments of the reacting dislocation are investigated. The geometry of the intersection of segments of reacting dislocations, at which dislocation junctions are not completely destructed under stress but cease to be an obstacle for further motion of the glide dislocation, is determined. Such junctions remain in the shear zone, presenting an obstacle to other glide dislocations. Conditions under which the length of the dislocation junction increases with an increase in the stress exceeding the original length are found. The formed extended barrier becomes too strong for the acting stress. Higher stresses are required in order to destruct it. The probability of completely destructible junctions under stress, the probability of non-destructible junctions that remain in the shear zone and replenish the density of dislocation debris, as well as the probability of formation of long strong junctions, which are barriers capable of limiting the shear zone, are determined.

  1. Pure Intrathoracic Scapular Dislocation.

    PubMed

    Demirkiran, Nihat Demirhan; Kar, Adem

    2016-01-01

    Scapular dislocation, also known as locked scapula or scapulothoracic dislocation, is a rare entity that can be identified as extrathoracic or intrathoracic dislocation, depending on the penetration of the scapula into the thoracic cavity. The 3 reported cases of intrathoracic scapular dislocations in the literature are associated with a preexisting condition, such as sternoclavicular separation, prior rib fracture, thoracotomy for a lung transplant procedure, or surgical resection of superior ribs during breast or pulmonary tumor excisions. There are also 3 published cases of intrathoracic scapular impaction, involving comminuted scapular fractures with intrathoracic impaction of the inferior fragment through intercostal space. We report an intrathoracic scapular dislocation that was not associated with fracture of the scapula or predisposing factors. To our knowledge, this is the first case of pure intrathoracic dislocation.

  2. Dislocation analysis of InGaN/GaN quantum dots grown by metal organic chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Yang, Di; Wang, Lai; Hao, Zhi-Biao; Luo, Yi; Sun, Changzheng; Han, Yanjun; Xiong, Bing; Wang, Jian; Li, Hongtao

    2016-11-01

    The dislocations in InGaN/GaN quantum dots grown by metal organic chemical vapor deposition were studied by high-resolution transmission electron microscopy combining the Fourier filtering process. The misfit dislocations were observed in uncapped InGaN/GaN quantum dots. However, for the capped InGaN/GaN quantum dots, the GaN capping layer was found to suppress the generation of misfit dislocations and hence hindered the strain relaxation. Therefore, an overgrowth InGaN layer was used to relieve the strain in InGaN quantum dots and misfit dislocations were correspondingly found in these samples. In addition, defects were observed in low temperature GaN layers which suggested the existence of stacking faults.

  3. Thermodynamic forces in single crystals with dislocations

    NASA Astrophysics Data System (ADS)

    Van Goethem, Nicolas

    2014-06-01

    A simple model for the evolution of macroscopic dislocation regions in a single crystal is presented. This model relies on maximal dissipation principle within Kröner's geometric description of the dislocated crystal. Mathematical methods and tools from shape optimization theory provide equilibrium relations at the dislocation front, similarly to previous work achieved on damage modelling (J Comput Phys 33(16):5010-5044, 2011). The deformation state variable is the incompatible strain as related to the dislocation density tensor by a relation involving the Ricci curvature of the crystal underlying elastic metric. The time evolution of the model variables follows from a novel interpretation of the Einstein-Hilbert flow in terms of dislocation microstructure energy. This flow is interpreted as the dissipation of non-conservative dislocations, due to the climb mechanism, modelled by an average effect of mesoscopic dislocations moving normal to their glide planes by adding or removing points defects. The model equations are a fourth-order tensor parabolic equation involving the operator "incompatibility," here appearing as a tensorial counterpart of the scalar Laplacian. This work encompasses and generalizes results previously announced (C R Acad Sci Paris Ser I 349:923-927, 2011), with in addition a series of physical interpretations to give a meaning to the newly introduced concepts.

  4. Irreducible posterolateral elbow dislocation.

    PubMed

    Atkinson, Cameron T; Pappas, Nick D; Lee, Donald H

    2014-02-01

    Elbow dislocations are a high-energy traumatic event resulting in loss of congruence of a stable joint. The majority of elbow dislocations can be reduced by closed means and treated conservatively. We present a case of an irreducible elbow dislocation with reduction blocked by the radial head buttonholed through the lateral ligamentous complex. We performed open reduction with release followed by repair of the lateral ligamentous complex. Clinicians need to understand this unique variant of an elbow dislocation to appropriately treat this operative injury.

  5. Dislocated shoulder - aftercare

    MedlinePlus

    ... aftercare; Shoulder subluxation - aftercare; Shoulder reduction - aftercare; Glenohumeral joint dislocation ... that connect bone to bone) of the shoulder joint. All of these tissues help keep your arm ...

  6. Bilateral Anterior Shoulder Dislocation

    PubMed Central

    Siu, Yuk Chuen; Lui, Tun Hing

    2014-01-01

    Introduction: Unilateral anterior shoulder dislocation is one of the most common problems encountered in orthopedic practice. However, simultaneous bilateral anterior dislocation of the shoulders is quite rare. Case Presentation: We report a case of a 75-year-old woman presented with simultaneous bilateral anterior shoulder dislocation following a trauma, complicated with a traction injury to the posterior cord of the brachial plexus. Conclusions: Bilateral anterior shoulder dislocation is very rare. The excessive traction force during closed reduction may lead to nerve palsy. Clear documentation of neurovascular status and adequate imaging before and after a reduction should be performed. PMID:25685749

  7. Discrete dislocations in graphene

    NASA Astrophysics Data System (ADS)

    Ariza, M. P.; Ortiz, M.

    2010-05-01

    In this work, we present an application of the theory of discrete dislocations of Ariza and Ortiz (2005) to the analysis of dislocations in graphene. Specifically, we discuss the specialization of the theory to graphene and its further specialization to the force-constant model of Aizawa et al. (1990). The ability of the discrete-dislocation theory to predict dislocation core structures and energies is critically assessed for periodic arrangements of dislocation dipoles and quadrupoles. We show that, with the aid of the discrete Fourier transform, those problems are amenable to exact solution within the discrete-dislocation theory, which confers the theory a distinct advantage over conventional atomistic models. The discrete dislocations exhibit 5-7 ring core structures that are consistent with observation and result in dislocation energies that fall within the range of prediction of other models. The asymptotic behavior of dilute distributions of dislocations is characterized analytically in terms of a discrete prelogarithmic energy tensor. Explicit expressions for this discrete prelogarithmic energy tensor are provided up to quadratures.

  8. Initial stages of misfit stress relaxation through the formation of prismatic dislocation loops in GaN-Ga2O3 composite nanostructures

    NASA Astrophysics Data System (ADS)

    Gutkin, M. Yu.; Smirnov, A. M.

    2016-08-01

    The initial stages of misfit stress relaxation through the formation of rectangular prismatic dislocation loops in model composite nanostructures have been considered. The nanostructures are either spherical or cylindrical GaN shells grown on solid or hollow β-Ga2O3 cores or planar thin GaN films on β-Ga2O3 substrates. Three characteristic configurations of prismatic dislocation loops, namely, square loops, loops elongated along the GaN/Ga2O3 interface, and loops elongated along the normal to the GaN/Ga2O3 interface, have been analyzed. The generation of prismatic dislocation loops from the interface into the bulk of the GaN shell (film), from the free surface into the GaN shell (film), and from the interface into the β-Ga2O3 core (substrate) has been investigated. It has been shown that, for the minimum known estimate of the lattice misfit (2.6%) in some of the considered nanostructures, no any prismatic dislocation loops can be generated. If the generation of prismatic dislocation loops is possible, then in all the considered nanostructures, the energetically more favorable case corresponds to prismatic dislocation loops elongated along the GaN/Ga2O3 interfaces, and the more preferred generation of prismatic dislocation loops occurs from the GaN free surface. The GaN/Ga2O3 nanostructures that are the most and least resistant to the formation of prismatic dislocation loops have been determined. It has been found that, among the considered nanostructures, the planar two-layer GaN/Ga2O3 plate is the most resistant to the generation of prismatic dislocation loops, which is explained by the action of an alternative mechanism for the relaxation of misfit stresses due to the bending of the plate. The least resistant nanostructure is the planar three-layer GaN/Ga2O3/GaN plate, in which GaN films have an identical thickness and which itself as a whole does not undergo bending. The critical thicknesses of the GaN shells (films), which must be exceeded to ensure the

  9. Dislocation mechanisms in stressed crystals with surface effects

    NASA Astrophysics Data System (ADS)

    Wu, Chi-Chin; Crone, Joshua; Munday, Lynn; Discrete Dislocation Dynamics Team

    2014-03-01

    Understanding dislocation properties in stressed crystals is the key for important processes in materials science, including the strengthening of metals and the stress relaxation during the growth of hetero-epitaxial structures. Despite existing experimental approaches and theories, many dislocation mechanisms with surface effects still remain elusive in experiments. Even though discrete dislocation dynamics (DDD) simulations are commonly employed to study dislocations, few demonstrate sufficient computational capabilities for massive dislocations with the combined effects of surfaces and stresses. Utilizing the Army's newly developed FED3 code, a DDD computation code coupled with finite elements, this work presents several dislocation mechanisms near different types of surfaces in finite domains. Our simulation models include dislocations in a bended metallic cantilever beam, near voids in stressed metals, as well as threading and misfit dislocations in as-grown semiconductor epitaxial layers and their quantitative inter-correlations to stress relaxation and surface instability. Our studies provide not only detailed physics of individual dislocation mechanisms, but also important collective dislocation properties such as dislocation densities and strain-stress profiles and their interactions with surfaces.

  10. TEM study of defect structure of GaN epitaxial films grown on GaN/Al2O3 substrates with buried column pattern

    NASA Astrophysics Data System (ADS)

    Mynbaeva, M. G.; Kremleva, A. V.; Kirilenko, D. A.; Sitnikova, A. A.; Pechnikov, A. I.; Mynbaev, K. D.; Nikolaev, V. I.; Bougrov, V. E.; Lipsanen, H.; Romanov, A. E.

    2016-07-01

    A TEM study of defect structure of GaN films grown by chloride vapor-phase epitaxy (HVPE) on GaN/Al2O3 substrates was performed. The substrates were fabricated by metal-organic chemical vapor deposition overgrowth of templates with buried column pattern. The results of TEM study showed that the character of the defect structure of HVPE-grown films was determined by the configuration of the column pattern in the substrate. By choosing the proper pattern, the reduction in the density of threading dislocations in the films by two orders of magnitude (in respect to the substrate material), down to the value of 107 cm-2, was achieved.

  11. The Peculiarities of Strain Relaxation in GaN/AlN Superlattices Grown on Vicinal GaN (0001) Substrate: Comparative XRD and AFM Study

    NASA Astrophysics Data System (ADS)

    Kuchuk, Andrian V.; Kryvyi, Serhii; Lytvyn, Petro M.; Li, Shibin; Kladko, Vasyl P.; Ware, Morgan E.; Mazur, Yuriy I.; Safryuk, Nadiia V.; Stanchu, Hryhorii V.; Belyaev, Alexander E.; Salamo, Gregory J.

    2016-05-01

    Superlattices (SLs) consisting of symmetric layers of GaN and AlN have been investigated. Detailed X-ray diffraction and reflectivity measurements demonstrate that the relaxation of built-up strain in the films generally increases with an increasing number of repetitions; however, an apparent relaxation for subcritical thickness SLs is explained through the accumulation of Nagai tilt at each interface of the SL. Additional atomic force microscopy measurements reveal surface pit densities which appear to correlate with the amount of residual strain in the films along with the appearance of cracks for SLs which have exceeded the critical thickness for plastic relaxation. These results indicate a total SL thickness beyond which growth may be limited for the formation of high-quality coherent crystal structures; however, they may indicate a growth window for the reduction of threading dislocations by controlled relaxation of the epilayers.

  12. Terahertz study of m-plane GaN thin fims

    NASA Astrophysics Data System (ADS)

    Quadir, Shaham; Jang, Der-Jun; Lin, Ching-Liang; Lo, Ikai

    2014-03-01

    We investigate the optical properties of m-plane GaN thin films using the terahertz time domain spectroscopy. The m-plane GaN thin films were grown on γ-LiAlO2 substrates with buffer layers of low temperature grown GaN. The thin films were illuminated with terahertz radiation generated by a LT-GaAs antenna and the transmitted signal was detected by a ZnTe crystal. The polarization of the terahertz wave was chosen to be either parallel or perpendicular to the GaN [0001] direction. We compared the transmitted signals of the m-plane GaN thin films to that of the LAO substrate. The samples as well as the LAO substrate exhibited polarization dependence of absorption in terahertz spectrum. The carrier densities and the mobilities were derived from the transmittance of the THz wave using extended Drude model. We found, in all samples, both the carrier densities and mobilities along the GaN [0001] direction were smaller than those along the GaN [1120] direction due to the stripe formation along the GaN [1120].

  13. Modeling of dislocation dynamics in germanium Czochralski growth

    NASA Astrophysics Data System (ADS)

    Artemyev, V. V.; Smirnov, A. D.; Kalaev, V. V.; Mamedov, V. M.; Sidko, A. P.; Podkopaev, O. I.; Kravtsova, E. D.; Shimansky, A. F.

    2017-06-01

    Obtaining very high-purity germanium crystals with low dislocation density is a practically difficult problem, which requires knowledge and experience in growth processes. Dislocation density is one of the most important parameters defining the quality of germanium crystal. In this paper, we have performed experimental study of dislocation density during 4-in. germanium crystal growth using the Czochralski method and comprehensive unsteady modeling of the same crystal growth processes, taking into account global heat transfer, melt flow and melt/crystal interface shape evolution. Thermal stresses in the crystal and their relaxation with generation of dislocations within the Alexander-Haasen model have been calculated simultaneously with crystallization dynamics. Comparison to experimental data showed reasonable agreement for the temperature, interface shape and dislocation density in the crystal between calculation and experiment.

  14. Metallurgy: Starting and stopping dislocations

    NASA Astrophysics Data System (ADS)

    Minor, Andrew M.

    2015-09-01

    A comparison of dislocation dynamics in two hexagonal close-packed metals has revealed that dislocation movement can vary substantially in materials with the same crystal structure, associated with how the dislocations relax when stationary.

  15. Spatially resolved and orientation dependent Raman mapping of epitaxial lateral overgrowth nonpolar a-plane GaN on r-plane sapphire

    PubMed Central

    Jiang, Teng; Xu, Sheng-rui; Zhang, Jin-cheng; Xie, Yong; Hao, Yue

    2016-01-01

    Uncoalesced a-plane GaN epitaxial lateral overgrowth (ELO) structures have been synthesized along two mask stripe orientations on a-plane GaN template by MOCVD. The morphology of two ELO GaN structures is performed by Scanning electronic microscopy. The anisotropy of crystalline quality and stress are investigated by micro-Raman spectroscopy. According to the Raman mapping spectra, the variations on the intensity, peak shift and the full width at half maximum (FWHM) of GaN E2 (high) peak indicate that the crystalline quality improvement occurs in the window region of the GaN stripes along [0001], which is caused by the dislocations bending towards the sidewalls. Conversely, the wing regions have better quality with less stress as the dislocations propagated upwards when the GaN stripes are along []. Spatial cathodoluminescence mapping results further support the explanation for the different dislocation growth mechanisms in the ELO processes with two different mask stripe orientations. PMID:26821824

  16. Electron density window for best frequency performance, lowest phase noise and slowest degradation of GaN heterostructure field-effect transistors

    NASA Astrophysics Data System (ADS)

    Matulionis, Arvydas

    2013-07-01

    The problems in the realm of nitride heterostructure field-effect transistors (HFETs) are discussed in terms of a novel fluctuation-dissipation-based approach impelled by a recent demonstration of strong correlation of hot-electron fluctuations with frequency performance and degradation of the devices. The correlation has its genesis in the dissipation of the LO-mode heat accumulated by the non-equilibrium longitudinal optical phonons (hot phonons) confined in the channel that hosts the high-density hot-electron gas subjected to a high electric field. The LO-mode heat causes additional scattering of hot electrons and facilitates defect formation in a different manner than the conventional heat contained mainly in the acoustic phonon mode. We treat the heat dissipation problem in terms of the hot-phonon lifetime responsible for the conversion of the non-migrant hot phonons into migrant acoustic modes and other vibrations. The lifetime is measured over a wide range of electron density and supplied electric power. The optimal conditions for the dissipation of the LO-mode heat are associated with the plasmon-assisted disintegration of hot phonons. Signatures of plasmons are experimentally resolved in fluctuations, dissipation, hot-electron transport, transistor frequency performance, transistor phase noise and transistor reliability. In particular, a slower degradation and a faster operation of GaN-based HFETs take place inside the electron density window where the resonant plasmon-assisted ultrafast dissipation of the LO-mode heat comes into play. A novel heterostructure design for the possible improvement of HFET performance is proposed, implemented and tested.

  17. The equivalence between dislocation pile-ups and cracks

    NASA Technical Reports Server (NTRS)

    Liu, H. W.; Gao, Q.

    1990-01-01

    Cracks and dislocation pile-ups are equivalent to each other. In this paper, the physical equivalence between cracks and pile-ups is delineated, and the relationshps between crack-extension force, force on the leading dislocation, stress-intensity factor, and dislocation density are reviewed and summarized. These relations make it possible to extend quantitatively the recent advances in the concepts and practices of fracture mechanics to the studies of microfractures and microplastic deformations.

  18. The equivalence between dislocation pile-ups and cracks

    NASA Technical Reports Server (NTRS)

    Liu, H. W.; Gao, Q.

    1990-01-01

    Cracks and dislocation pile-ups are equivalent to each other. In this paper, the physical equivalence between cracks and pile-ups is delineated, and the relationshps between crack-extension force, force on the leading dislocation, stress-intensity factor, and dislocation density are reviewed and summarized. These relations make it possible to extend quantitatively the recent advances in the concepts and practices of fracture mechanics to the studies of microfractures and microplastic deformations.

  19. Traumatic vertical atlantoaxial dislocation.

    PubMed

    Payer, M; Wetzel, S; Kelekis, A; Jenny, B

    2005-08-01

    We present a case of traumatic vertical atlantoaxial dislocation of 16 millimetres with a fatal outcome. We hypothesize that this extremely rare traumatic vertical atlantoaxial dislocation results from insufficiency of the C1/C2 facet capsules after rupture of the tectorial membrane and the alar ligaments.

  20. Traumatic proximal tibiofibular dislocation.

    PubMed

    Burgos, J; Alvarez-Montero, R; Gonzalez-Herranz, P; Rapariz, J M

    1997-01-01

    Proximal tibiofibular dislocation is an exceptional lesion. Rarer still is its presentation in childhood. We describe the clinical case of a 6-year-old boy, the victim of a road accident. He had a tibiofibular dislocation associated with a metaphyseal fracture of the tibia.

  1. Parallel Dislocation Simulator

    SciTech Connect

    2006-10-30

    ParaDiS is software capable of simulating the motion, evolution, and interaction of dislocation networks in single crystals using massively parallel computer architectures. The software is capable of outputting the stress-strain response of a single crystal whose plastic deformation is controlled by the dislocation processes.

  2. Strain Relief Analysis of InN Quantum Dots Grown on GaN

    PubMed Central

    2007-01-01

    We present a study by transmission electron microscopy (TEM) of the strain state of individual InN quantum dots (QDs) grown on GaN substrates. Moiré fringe and high resolution TEM analyses showed that the QDs are almost fully relaxed due to the generation of a 60° misfit dislocation network at the InN/GaN interface. By applying the Geometric Phase Algorithm to plan-view high-resolution micrographs, we show that this network consists of three essentially non-interacting sets of misfit dislocations lying along the directions. Close to the edge of the QD, the dislocations curve to meet the surface and form a network of threading dislocations surrounding the system. PMID:21794190

  3. Electronic properties of dislocations

    NASA Astrophysics Data System (ADS)

    Reiche, M.; Kittler, M.; Uebensee, H.; Pippel, E.; Haehnel, A.; Birner, S.

    2016-04-01

    Dislocations exhibit a number of exceptional electronic properties resulting in a significant increase in the drain current of MOSFETs if defined numbers of these defects are placed in the channel. Measurements on individual dislocations in Si refer to a supermetallic conductivity. A model of the electronic structure of dislocations is proposed based on experimental measurements and tight-binding simulations. It is shown that the high strain level on the dislocation core—exceeding 10 % or more—causes locally dramatic changes in the band structure and results in the formation of a quantum well along the dislocation line. This explains experimental findings (two-dimensional electron gas, single-electron transitions). The energy quantization within the quantum well is most important for supermetallic conductivity.

  4. Electromechanical simulations of dislocations

    NASA Astrophysics Data System (ADS)

    Skiba, Oxana; Gracie, Robert; Potapenko, Stanislav

    2013-04-01

    Improving the reliability of micro-electronic devices depends in part on developing a more in-depth understanding of dislocations because dislocations are barriers to charge carriers. To this end, the quasi-static simulation of discrete dislocations dynamics in materials under mechanical and electrical loads is presented. The simulations are based on the extended finite element method, where dislocations are modelled as internal discontinuities. The strong and weak forms of the boundary value problem for the coupled system are presented. The computation of the Peach-Koehler force using the J-integral is discussed. Examples to illustrate the accuracy of the simulations are presented. The motion of the network of the dislocations under different electrical and mechanical loads is simulated. It was shown that even in weak piezoelectric materials the effect of the electric field on plastic behaviour is significant.

  5. Atomic-scale and pit-free flattening of GaN by combination of plasma pretreatment and time-controlled chemical mechanical polishing

    NASA Astrophysics Data System (ADS)

    Deng, Hui; Endo, Katsuyoshi; Yamamura, Kazuya

    2015-08-01

    Chemical mechanical polishing (CMP) combined with atmospheric-pressure plasma pretreatment was applied to a GaN (0001) substrate. The irradiation of a CF4-containing plasma was proven to be very useful for modifying the surface of GaN. When CMP was conducted on a plasma-irradiated surface, a modified layer of GaF3 acted as a protective layer on GaN by preventing the formation of etch pits. Within a short duration (8 min) of CMP using a commercially available CeO2 slurry, an atomically flat surface with a root mean square (rms) roughness of 0.11 nm was obtained. Moreover, etch pits, which are inevitably introduced in conventional CMP, could not be observed at the dislocation sites on the polished GaN surface. It was revealed that CMP combined with the plasma pretreatment was very effective for obtaining a pit-free and atomically flat GaN surface.

  6. Investigation of AlN films grown by molecular beam epitaxy on vicinal Si(111) as templates for GaN quantum dots

    SciTech Connect

    Benaissa, M.; Vennegues, P.; Tottereau, O.; Nguyen, L.; Semond, F.

    2006-12-04

    The use of AlN epitaxial films deposited on vicinal Si(111) as templates for the growth of GaN quantum dots is investigated by transmission electron microscopy and atomic force microscopy. It is found that the substrate vicinality induces both a slight tilt of the AlN (0001) direction with respect to the [111] direction and a step bunching mechanism. As a consequence, a dislocation dragging behavior is observed giving rise to dislocation-free areas well suited for the nucleation of GaN quantum dots.

  7. Termination of hollow core nanopipes in GaN by an AlN interlayer

    NASA Astrophysics Data System (ADS)

    Contreras, O.; Ruiz-Zepeda, F.; Avalos-Borja, M.; Dadgar, A.; Krost, A.

    2016-12-01

    Nanopipes associated to screw dislocations are studied by transmission electron microscopy in Si-doped GaN films grown on silicon substrates. The observations revealed that dislocations had an empty core and that an AlN interlayer is suited to block their propagation. The termination mechanism is discussed in terms of strain and kinetic growth factors, which may affect the creation and propagation of nanopipes. According to the observations, it is proposed that either step pinning or lateral overgrowth occurring at the proximity of the defect assists in capping the nanopipe.

  8. GaN nanorod arrays as a high-stability field emitter

    NASA Astrophysics Data System (ADS)

    Seo, H. W.; Tu, L. W.; Chen, M.; Chen, Q. Y.; Bensaoula, A.; Wang, X. M.; Chu, W. K.

    2017-09-01

    Patterned arrays of epitaxial GaN (0001) nanorods by Si-ion bombardment of Si (111) substrates have been fabricated for the field emitters. The field emission characteristics of the GaN nanorod arrays were measured; both GaN nanorods on self-implanted and GaN matrix on unimplanted Si substrates. The current densities as high as 10 mA/cm2 have been observed for GaN nanorod arrays under applied electrical field of about 70 V/μm, while the stability of field emission at 3.93 mA/cm2 has been tested up to 7 hours with the standard deviation of 0.2%.

  9. Temperature Dependence of GaN HEMT Small Signal Parameters

    DTIC Science & Technology

    2011-11-01

    is useful for MMIC designs. 1. Introduction Devices based on wide bandgap materials (such as GaN, SiC) promise much higher power densities and...potential for higher temperature operation than GaAs, Si, and SiGe devices [1–3]. The reliability and performance of HEMTs and MMICs depend critically on

  10. GaN surface states investigated by electrochemical studies

    NASA Astrophysics Data System (ADS)

    Winnerl, Andrea; Garrido, Jose A.; Stutzmann, Martin

    2017-03-01

    We present a systematic study of electrochemically active surface states on MOCVD-grown n-type GaN in aqueous electrolytes using cyclic voltammetry and impedance spectroscopy over a wide range of potentials and frequencies. In order to alter the surface states, the GaN samples are either etched or oxidized, and the influence of the surface treatment on the defect-mediated charge transfer to the electrolyte is investigated. Etching in HCl removes substoichiometric GaO x , and leads to a pronounced density of electrochemically active surface states. Oxidation effectively removes these surface states.

  11. Creep Deformation by Dislocation Movement in Waspaloy.

    PubMed

    Whittaker, Mark; Harrison, Will; Deen, Christopher; Rae, Cathie; Williams, Steve

    2017-01-12

    Creep tests of the polycrystalline nickel alloy Waspaloy have been conducted at Swansea University, for varying stress conditions at 700 °C. Investigation through use of Transmission Electron Microscopy at Cambridge University has examined the dislocation networks formed under these conditions, with particular attention paid to comparing tests performed above and below the yield stress. This paper highlights how the dislocation structures vary throughout creep and proposes a dislocation mechanism theory for creep in Waspaloy. Activation energies are calculated through approaches developed in the use of the recently formulated Wilshire Equations, and are found to differ above and below the yield stress. Low activation energies are found to be related to dislocation interaction with γ' precipitates below the yield stress. However, significantly increased dislocation densities at stresses above yield cause an increase in the activation energy values as forest hardening becomes the primary mechanism controlling dislocation movement. It is proposed that the activation energy change is related to the stress increment provided by work hardening, as can be observed from Ti, Ni and steel results.

  12. Creep Deformation by Dislocation Movement in Waspaloy

    PubMed Central

    Whittaker, Mark; Harrison, Will; Deen, Christopher; Rae, Cathie; Williams, Steve

    2017-01-01

    Creep tests of the polycrystalline nickel alloy Waspaloy have been conducted at Swansea University, for varying stress conditions at 700 °C. Investigation through use of Transmission Electron Microscopy at Cambridge University has examined the dislocation networks formed under these conditions, with particular attention paid to comparing tests performed above and below the yield stress. This paper highlights how the dislocation structures vary throughout creep and proposes a dislocation mechanism theory for creep in Waspaloy. Activation energies are calculated through approaches developed in the use of the recently formulated Wilshire Equations, and are found to differ above and below the yield stress. Low activation energies are found to be related to dislocation interaction with γ′ precipitates below the yield stress. However, significantly increased dislocation densities at stresses above yield cause an increase in the activation energy values as forest hardening becomes the primary mechanism controlling dislocation movement. It is proposed that the activation energy change is related to the stress increment provided by work hardening, as can be observed from Ti, Ni and steel results. PMID:28772421

  13. Native defects in GaN: a hybrid functional study

    NASA Astrophysics Data System (ADS)

    Diallo, Ibrahima Castillo; Demchenko, Denis

    Intrinsic defects play an important role in the performance of GaN-based devices. We present hybrid density functional calculations of the electronic and possible optical properties of interstitial N (Ni-Ni) , N antisite (NGa) , interstitial Ga (Gai) , Ga antisite (GaN) , Ga vacancy (VGa) , N vacancy (VN) and Ga-N divacancies (VGaVN) in GaN. Our results show that the vacancies display relatively low formation energies in certain samples, whereas antisites and interstitials are energetically less favorable. However, interstitials can be created by electron irradiation. For instance, in 2.5 MeV electron-irradiated GaN samples, a strong correlation between the frequently observed photoluminescence (PL) band centered around 0.85 eV accompanied with a rich phonon sideband of ~0.88 eV and the theoretical optical behavior of interstitial Ga is discussed. N vacancies are found to likely contribute to the experimentally obtained green luminescence band (GL2) peaking at 2.24 eV in high-resistivity undoped and Mg-doped GaN. National Science Foundation (DMR-1410125) and the Thomas F. and Kate Miller Jeffress Memorial Trust.

  14. Dislocation conduction in Bi-Sb topological insulators

    NASA Astrophysics Data System (ADS)

    Hamasaki, Hiromu; Tokumoto, Yuki; Edagawa, Keiichi

    2017-02-01

    Previous theoretical works have predicted that when a specific condition is satisfied, dislocations in three-dimensional topological insulators form one-dimensional gapless states, which are topologically protected against disorder scattering. Here, the predicted dislocation conduction is experimentally investigated in Bi-Sb topological insulators. High-density dislocations with the Burgers vector satisfying the conductivity condition are introduced into Bi-Sb single crystals by plastic deformation. Conductivity measurements for deformed and undeformed samples and those for the deformed samples in different orientations show excess conductivity due to dislocation conduction.

  15. Gallium kinetics on m-plane GaN

    NASA Astrophysics Data System (ADS)

    Lim, C. B.; Ajay, A.; Monroy, E.

    2017-07-01

    In this paper, we study the adsorption/desorption kinetics of gallium on (1-100) m-GaN during molecular-beam epitaxy on bulk substrates. We demonstrate the stabilization of a laterally contracted biatomic layer of Ga containing up to ≈2.5 times the (0001) surface atom density, on top of the GaN(1-100) surface. By assessing the surface morphology of m-GaN layers grown under different Ga/N flux ratios, we show that the presence of the Ga bilayer allows the growth of atomically smooth m-GaN without accumulation of Ga droplets and in conditions (substrate temperature and Ga/N ratio) that are compatible with the growth of c-GaN.

  16. Adsorption of Al on GaN(110) Surface

    NASA Astrophysics Data System (ADS)

    Xie, Jianjun; Ping, Jiang; Zhang, Kaiming; Xie, Xide

    The electronic properties of Al deposited on GaN(110) surface with different adsorption geometries have been studied by using the surface linear muffin tin orbital approach. The layer projected density of states for Al-covered GaN(110) surface is calculated and compared with that of the clean surface. The charge distribution before and after the adsorption of Al are investigated. It is found that the deposited Al atoms prefer to bond with the surface N atoms with some charge transferred from Al to the GaN substrate. Finally, the Al-Ga exchange mechanism is also studied and it is found that the adsorbed Al may replace the second layer Ga atom to form a more stable configuration.

  17. Gate stack engineering for GaN lateral power transistors

    NASA Astrophysics Data System (ADS)

    Yang, Shu; Liu, Shenghou; Liu, Cheng; Hua, Mengyuan; Chen, Kevin J.

    2016-02-01

    Developing optimal gate-stack technology is a key to enhancing the reliability and performance of GaN insulated-gate devices for high-voltage power switching applications. In this paper, we discuss current challenges and review our recent progresses in gate-stack technology development toward high-performance and high-reliability GaN power devices, including (1) interface engineering that creates a high-quality dielectric/III-nitride interface with low trap density; (2) barrier-layer engineering that enables optimal trade-off between performance and stability; (3) bulk quality and reliability enhancement of the gate dielectric. These gate-stack techniques in terms of new process development and device structure design are valuable to realize highly reliable and competitive GaN power devices.

  18. Continuum dynamics of the formation, migration and dissociation of self-locked dislocation structures on parallel slip planes

    NASA Astrophysics Data System (ADS)

    Zhu, Yichao; Niu, Xiaohua; Xiang, Yang

    2016-11-01

    In continuum models of dislocations, proper formulations of short-range elastic interactions of dislocations are crucial for capturing various types of dislocation patterns formed in crystalline materials. In this article, the continuum dynamics of straight dislocations distributed on two parallel slip planes is modelled through upscaling the underlying discrete dislocation dynamics. Two continuum velocity field quantities are introduced to facilitate the discrete-to-continuum transition. The first one is the local migration velocity of dislocation ensembles which is found fully independent of the short-range dislocation correlations. The second one is the decoupling velocity of dislocation pairs controlled by a threshold stress value, which is proposed to be the effective flow stress for single slip systems. Compared to the almost ubiquitously adopted Taylor relationship, the derived flow stress formula exhibits two features that are more consistent with the underlying discrete dislocation dynamics: (i) the flow stress increases with the in-plane component of the dislocation density only up to a certain value, hence the derived formula admits a minimum inter-dislocation distance within slip planes; (ii) the flow stress smoothly transits to zero when all dislocations become geometrically necessary dislocations. A regime under which inhomogeneities in dislocation density grow is identified, and is further validated through comparison with discrete dislocation dynamical simulation results. Based on the findings in this article and in our previous works, a general strategy for incorporating short-range dislocation correlations into continuum models of dislocations is proposed.

  19. High purity, low dislocation GaAs single crystals

    NASA Technical Reports Server (NTRS)

    Chen, R. T.; Holmes, D. E.; Kirkpatrick, C. G.

    1983-01-01

    Liquid encapsulated Czochralski crystal growth techniques for producing undoped, high resistivity, low dislocation material suitable for device applications is described. Technique development resulted in reduction of dislocation densities in 3 inch GaAs crystals. Control over the melt stoichiometry was determined to be of critical importance for the reduction of twinning and polycrystallinity during growth.

  20. Probing the character of ultra-fast dislocations

    PubMed Central

    Ruestes, C. J.; Bringa, E. M.; Rudd, R. E.; Remington, B. A.; Remington, T. P.; Meyers, M. A.

    2015-01-01

    Plasticity is often controlled by dislocation motion, which was first measured for low pressure, low strain rate conditions decades ago. However, many applications require knowledge of dislocation motion at high stress conditions where the data are sparse, and come from indirect measurements dominated by the effect of dislocation density rather than velocity. Here we make predictions based on atomistic simulations that form the basis for a new approach to measure dislocation velocities directly at extreme conditions using three steps: create prismatic dislocation loops in a near-surface region using nanoindentation, drive the dislocations with a shockwave, and use electron microscopy to determine how far the dislocations moved and thus their velocity at extreme stress and strain rate conditions. We report on atomistic simulations of tantalum that make detailed predictions of dislocation flow, and find that the approach is feasible and can uncover an exciting range of phenomena, such as transonic dislocations and a novel form of loop stretching. The simulated configuration enables a new class of experiments to probe average dislocation velocity at very high applied shear stress. PMID:26592764

  1. Probing the character of ultra-fast dislocations

    SciTech Connect

    Rudd, R. E.; Ruestes, C. J.; Bringa, E. M.; Remington, B. A.; Remington, T. P.; Meyers, M. A.

    2015-11-23

    Plasticity is often controlled by dislocation motion, which was first measured for low pressure, low strain rate conditions decades ago. However, many applications require knowledge of dislocation motion at high stress conditions where the data are sparse, and come from indirect measurements dominated by the effect of dislocation density rather than velocity. Here we make predictions based on atomistic simulations that form the basis for a new approach to measure dislocation velocities directly at extreme conditions using three steps: create prismatic dislocation loops in a near-surface region using nanoindentation, drive the dislocations with a shockwave, and use electron microscopy to determine how far the dislocations moved and thus their velocity at extreme stress and strain rate conditions. We report on atomistic simulations of tantalum that make detailed predictions of dislocation flow, and find that the approach is feasible and can uncover an exciting range of phenomena, such as transonic dislocations and a novel form of loop stretching. Furthermore, the simulated configuration enables a new class of experiments to probe average dislocation velocity at very high applied shear stress.

  2. Probing the character of ultra-fast dislocations

    NASA Astrophysics Data System (ADS)

    Ruestes, C. J.; Bringa, E. M.; Rudd, R. E.; Remington, B. A.; Remington, T. P.; Meyers, M. A.

    2015-11-01

    Plasticity is often controlled by dislocation motion, which was first measured for low pressure, low strain rate conditions decades ago. However, many applications require knowledge of dislocation motion at high stress conditions where the data are sparse, and come from indirect measurements dominated by the effect of dislocation density rather than velocity. Here we make predictions based on atomistic simulations that form the basis for a new approach to measure dislocation velocities directly at extreme conditions using three steps: create prismatic dislocation loops in a near-surface region using nanoindentation, drive the dislocations with a shockwave, and use electron microscopy to determine how far the dislocations moved and thus their velocity at extreme stress and strain rate conditions. We report on atomistic simulations of tantalum that make detailed predictions of dislocation flow, and find that the approach is feasible and can uncover an exciting range of phenomena, such as transonic dislocations and a novel form of loop stretching. The simulated configuration enables a new class of experiments to probe average dislocation velocity at very high applied shear stress.

  3. Probing the character of ultra-fast dislocations

    DOE PAGES

    Rudd, R. E.; Ruestes, C. J.; Bringa, E. M.; ...

    2015-11-23

    Plasticity is often controlled by dislocation motion, which was first measured for low pressure, low strain rate conditions decades ago. However, many applications require knowledge of dislocation motion at high stress conditions where the data are sparse, and come from indirect measurements dominated by the effect of dislocation density rather than velocity. Here we make predictions based on atomistic simulations that form the basis for a new approach to measure dislocation velocities directly at extreme conditions using three steps: create prismatic dislocation loops in a near-surface region using nanoindentation, drive the dislocations with a shockwave, and use electron microscopy tomore » determine how far the dislocations moved and thus their velocity at extreme stress and strain rate conditions. We report on atomistic simulations of tantalum that make detailed predictions of dislocation flow, and find that the approach is feasible and can uncover an exciting range of phenomena, such as transonic dislocations and a novel form of loop stretching. Furthermore, the simulated configuration enables a new class of experiments to probe average dislocation velocity at very high applied shear stress.« less

  4. Yellow Luminescence Centers of GaN

    NASA Astrophysics Data System (ADS)

    Zhao, Guangyuan; Hubbard, Seth; Pavlidis, Dimitris

    2004-05-01

    The method for measuring Shockley-Read-Hall (SRH) lifetime of yellow centers of GaN was developed. The capture-section ratio (150) of hole to electron is extracted by comparing the experimental and theoretical results. A marked increase in the SRH lifetime (from 0.75 to 7.0 ns) with the increasing in Si doping density (from 1.5× 1017 to 8.8× 1018 cm-3) was observed, and it is attributed to some Si dopant substituting for the Ga vacancy. In addition, it is also found that the YL centers are an important factor limiting the performance of GaN-based devices.

  5. Change in equilibrium position of misfit dislocations at the GaN/sapphire interface by Si-ion implantation into sapphire. II. Electron energy loss spectroscopic study

    SciTech Connect

    Lee, Sung Bo Han, Heung Nam; Kim, Young-Min

    2015-07-15

    In Part I, we have shown that the addition of Si into sapphire by ion implantationmakes the sapphire substrate elastically softer than for the undoped sapphire. The more compliant layer of the Si-implanted sapphire substrate can absorb the misfit stress at the GaN/sapphire interface, which produces a lower threading-dislocation density in the GaN overlayer. Here in Part II, based on experimental results by electron energy loss spectroscopy and a first-principle molecular orbital calculation in the literature, we suggest that the softening effect of Si results from a reduction of ionic bonding strength in sapphire (α-Al{sub 2}O{sub 3}) with the substitution of Si for Al.

  6. Dislocation-related plasticity of ceria-stabilized zirconia polycrystals

    SciTech Connect

    Zhe, X.; Hendry, A.; Wang, C.

    1996-06-01

    Much higher plastic strain of 4% in Ce-TZP ceramics was produced by a novel thermal-mechanical process below 450 C. Observation by TEM showed that there were abundant dislocation pile-ups associated with a few martensitic laths in the deformed samples. The density of dislocations increased with thermal-mechanical cycles. These suggested that dislocation multiplication was caused by the high local stress concentration in front of a martensitic lath during the thermal-mechanical deformation. The generation and movement of dislocations introduced extra plasticity beside the transformation plasticity caused by martensite. Meanwhile, movement of dislocations relaxes the interface stress at martensitic laths to prevent reverse martensitic transformation and early cracking of the specimens. The results are discussed in terms of thermal-mechanical action and dislocation multiplication.

  7. Wafer-scale crack-free AlGaN on GaN through two-step selective-area growth for optically pumped stimulated emission

    NASA Astrophysics Data System (ADS)

    Ko, Young-Ho; Bae, Sung-Bum; Kim, Sung-Bock; Kim, Dong Churl; Leem, Young Ahn; Cho, Yong-Hoon; Nam, Eun-Soo

    2016-07-01

    Crack-free AlGaN template has been successfully grown over entire 2-in. wafer by using 2-step selective-area growth (SAG). The GaN truncated structure was obtained by vertical growth mode with low growth temperature. AlGaN of second step was grown under lateral growth mode. Low pressure enhanced the relative ratio of lateral to vertical growth rate as well as absolute overall growth rate. High V/III ratio was favorable for lateral growth mode. Crack-free planar AlGaN was obtained under low pressure of 30 Torr and high V/III ratio of 4400. The AlGaN was crack-free over entire 2-in. wafer and had quite uniform Al-mole fraction. The dislocation density of the AlGaN with 20% Al-composition was as low as ~7.6×108 /cm2, measured by cathodoluminescence. GaN/AlGaN multi-quantum well (MQW) with cladding and waveguide layers were grown on the crack-free AlGaN template with low dislocation density. It was confirmed that the MQW on the AlGaN template emitted the stimulated emission at 355.5 nm through optical pumping experiment. The AlGaN obtained by 2-step SAG would provide high crystal quality for highly-efficient optoelectronic devices as well as the ultraviolet laser diode.

  8. Bilateral traumatic hip dislocation associated with sacro-iliac dislocation.

    PubMed

    Galois, L; Meuley, E; Pfeffer, F; Mainard, D; Delagoutte, J P

    We report a rare injury in an 18-year-old woman who sustained posterior bilateral hip dislocation with sacro-iliac dislocation after a high energy motor vehicle accident. She was treated by closed reduction and skeletal traction. Bilateral traumatic hip dislocation is an uncommon occurrence. Rarer still is bilateral traumatic hip dislocation associated with sacro-iliac dislocation because it combines two different mechanisms of trauma. (Hip International 2002; 1: 47-9).

  9. Effect of V/III ratio on the surface morphology and electrical properties of m-plane (10 1 bar 0) GaN homoepitaxial layers

    NASA Astrophysics Data System (ADS)

    Barry, Ousmane I.; Tanaka, Atsushi; Nagamatsu, Kentaro; Bae, Si-Young; Lekhal, Kaddour; Matsushita, Junya; Deki, Manato; Nitta, Shugo; Honda, Yoshio; Amano, Hiroshi

    2017-06-01

    We have investigated the effect of V/III ratio on the surface morphology, impurity concentration and electrical properties of m-plane (10 1 bar 0) Gallium Nitride (GaN) homoepitaxial layers. Four-sided pyramidal hillocks are observed on the nominally on-axis m-plane GaN films. Hillocks sizes relatively increase by increasing the V/III ratio. All facets of pyramidal hillocks exhibit well-defined step-terrace features. Secondary ion mass spectrometry depth profiles reveal that carbon impurities decrease by increasing the V/III ratio while the lowest oxygen content is found at an optimized V/III ratio of 900. Vertical Schottky barrier diodes fabricated on the m-GaN samples were characterized. Low leakage current densities of the order of 10-10 A/cm2 at -5 V are obtained at the optimum V/III ratio. Oxygen impurities and screw-component dislocations around hillocks are found to have more detrimental impact on the leakage current mechanism.

  10. Phosphor-free white-light emitters using in-situ GaN nanostructures grown by metal organic chemical vapor deposition

    PubMed Central

    Min, Daehong; Park, Donghwy; Jang, Jongjin; Lee, Kyuseung; Nam, Okhyun

    2015-01-01

    Realization of phosphor-free white-light emitters is becoming an important milestone on the road to achieve high quality and reliability in high-power white-light-emitting diodes (LEDs). However, most of reported methods have not been applied to practical use because of their difficulties and complexity. In this study we demonstrated a novel and practical growth method for phosphor-free white-light emitters without any external processing, using only in-situ high-density GaN nanostructures that were formed by overgrowth on a silicon nitride (SiNx) interlayer deposited by metal organic chemical vapor deposition. The nano-sized facets produced variations in the InGaN thickness and the indium concentration when an InGaN/GaN double heterostructure was monolithically grown on them, leading to white-color light emission. It is important to note that the in-situ SiNx interlayer not only facilitated the GaN nano-facet structure, but also blocked the propagation of dislocations. PMID:26626890

  11. Site controlled red-yellow-green light emitting InGaN quantum discs on nano-tipped GaN rods.

    PubMed

    Conroy, M; Li, H; Kusch, G; Zhao, C; Ooi, B; Edwards, P R; Martin, R W; Holmes, J D; Parbrook, P J

    2016-06-07

    We report a method of growing site controlled InGaN multiple quantum discs (QDs) at uniform wafer scale on coalescence free ultra-high density (>80%) nanorod templates by metal organic chemical vapour deposition (MOCVD). The dislocation and coalescence free nature of the GaN space filling nanorod arrays eliminates the well-known emission problems seen in InGaN based visible light sources that these types of crystallographic defects cause. Correlative scanning transmission electron microscopy (STEM), energy-dispersive X-ray (EDX) mapping and cathodoluminescence (CL) hyperspectral imaging illustrates the controlled site selection of the red, yellow and green (RYG) emission at these nano tips. This article reveals that the nanorod tips' broad emission in the RYG visible range is in fact achieved by manipulating the InGaN QD's confinement dimensions, rather than significantly increasing the In%. This article details the easily controlled method of manipulating the QDs dimensions producing high crystal quality InGaN without complicated growth conditions needed for strain relaxation and alloy compositional changes seen for bulk planar GaN templates.

  12. Synthesis and optical properties of GaN micro/nanocone bundles on copper wafers

    SciTech Connect

    Zhou Qingtao; Chen Yiqing Su Yong; Jia Chong; Pen, Bo; Yin Song; Li Sen; Kong Weihai

    2008-08-04

    GaN micro/nanocone bundles with controllable size and density have been synthesized on Cu or Cu{sub 95}In{sub 5} alloy wafers using a modified thermal-evaporation process. The size and density of GaN cone bundles could be efficiently controlled by adjusting growth temperatures and the components of metal substrates. The structure and morphology of the as-synthesized GaN cones were characterized using X-ray diffraction, scanning electron microscopy and transmission electron microscopy. The as-synthesized micro/nanocones are single crystals with a hexagonal wurtzite structure, growing along the [101-bar1] direction. The growth process follows a vapor-liquid-solid mechanism. The dependence of photoluminescence property on the size and density of GaN cone bundles at room temperature was also investigated.

  13. Numerical Simulation of Dislocation Interactions in Strained Layers

    NASA Astrophysics Data System (ADS)

    Schwarz, Klaus W.

    1998-03-01

    Because both the dynamics and the interactions of dislocations are complicated, little is known about the effects that individual dislocations have on each other when they come into close proximity, and, more generally, about the evolution of collections of strongly interacting dislocations. The power of modern supercomputers allows one to address these issues by direct numerical simulation. In our program the stress tensor which moves the dislocations is calculated at every point by evaluating the full Peach-Koehler expression over all of the dislocations present. The self-interaction of the dislocations is regularized by the Brown method of splitting the dislocation in half, moving the two halves outward by some core parameter, and averaging the result. The code can be used to study the interactions between arbitrarily configured dislocations, located on any allowed glide plane, passing from one glide plane to another, and having any allowed Burgers vector, and has been applied to model the behavior of dislocations in semiconducting thin films. The behavior of a threading dislocation as it tries to pass over a misfit dislocation in the layer interface has been investigated, and the blocking effect of the misfit is found to be considerably less than previously estimated. Subsequent studies have calculated the behavior of Frank-Read sources, spiral sources, and corner sources in a strained layer, as well as that of multiple sources operating on various glide planes. For a model in which the layer is assumed to relax through the excitation of a low density of Frank-Read sources, it is found that the interactions between the emitted dislocations result in elaborate dislocation networks. The predicted patterns are strikingly similar to those observed in actual relaxed layers.

  14. Galeazzi fracture-dislocations.

    PubMed

    Mikić, Z D

    1975-12-01

    Among 125 patients with the Galeazzi-type fracture-dislocation of the forearm, there were fourteen children and eighty-six adults with the classic Galeazzi lesion, and twenty-five patients with a special type -- fracture of both bones and dislocation of the distal radio-ulnar joint. Conservative management was successful only in children. In adults this method resulted in failure in 80 per cent of cases. The results of operative treatment were much better. The fracture fragments of the radius and the dislocation of the radio-ulnar joint in this complex injury are very unstable, especially in the lesion with fractures of the radius and ulna, and it appears that rigid internal fixation is necessary for the dislocation as well as the fracture. With combined fixation over half of the results were excellent.

  15. Continuum Theory of Dislocations: Cell Structure Formation

    NASA Astrophysics Data System (ADS)

    Limkumnerd, Surachate; Sethna, James P.

    2005-03-01

    Line-like topological defects inside metals are called dislocations. These dislocations in late stages of hardening form patterns called cell structures. We are developing a mesoscale theory for the formation of cell structures that systematically derives the order parameter fields and evolution laws from the conserved topological Burgers vector density or the Nye dislocation tensor. (In classical plasticity theories, describing scales large compared to these cells, one normally bypasses the complicated motions of the dislocations by supplying yield surface and plastic hardening function in order to determine the evolution of state variables.) Using Landau approach and a closure approximation, an evolution equation for the dislocation density tensor is obtained by employing simple symmetry arguments and the constraint that the elastic energy must decrease with time at fixed stress. The evolution laws lead to singularity formation at finite times, which we expect will be related to the formation of cell walls. Implementation of finite difference simulations using the upwind scheme and the results in one and higher dimensions will be discussed.

  16. A partly-contacted epitaxial lateral overgrowth method applied to GaN material

    PubMed Central

    Xiao, Ming; Zhang, Jincheng; Duan, Xiaoling; Shan, Hengsheng; Yu, Ting; Ning, Jing; Hao, Yue

    2016-01-01

    We have discussed a new crystal epitaxial lateral overgrowth (ELO) method, partly-contacted ELO (PC-ELO) method, of which the overgrowth layer partly-contacts with underlying seed layer. The passage also illustrates special mask structures with and without lithography and provides three essential conditions to achieve the PC-ELO method. What is remarkable in PC-ELO method is that the tilt angle of overgrowth stripes could be eliminated by contacting with seed layer. Moreover, we report an improved monolayer microsphere mask method without lithography of PC-ELO method, which was used to grow GaN. From the results of scanning electron microscopy, cathodoluminescence, x-ray diffraction (XRD), transmission electron microscopy, and atomic force microscope (AFM), overgrowth layer shows no tilt angle relative to the seed layer and high quality coalescence front (with average linear dislocation density <6.4 × 103 cm−1). Wing stripes peak splitting of the XRD rocking curve due to tilt is no longer detectable. After coalescence, surface steps of AFM show rare discontinuities due to the low misorientation of the overgrowth regions. PMID:27033154

  17. Lattice disorder produced in GaN by He-ion implantation

    NASA Astrophysics Data System (ADS)

    Han, Yi; Peng, Jinxin; Li, Bingsheng; Wang, Zhiguang; Wei, Kongfang; Shen, Tielong; Sun, Jianrong; Zhang, Limin; Yao, Cunfeng; Gao, Ning; Gao, Xing; Pang, Lilong; Zhu, Yabin; Chang, Hailong; Cui, Minghuan; Luo, Peng; Sheng, Yanbin; Zhang, Hongpeng; Zhang, Li; Fang, Xuesong; Zhao, Sixiang; Jin, Jin; Huang, Yuxuan; Liu, Chao; Tai, Pengfei; Wang, Dong; He, Wenhao

    2017-09-01

    The lattice disorders induced by He-ion implantation in GaN epitaxial films to fluences of 2 × 1016, 5 × 1016 and 1 × 1017 cm-2 at room temperature (RT) have been investigated by a combination of Raman spectroscopy, high-resolution X-ray diffraction (HRXRD), nano-indentation, and transmission electron microscopy (TEM). The experimental results present that Raman intensity decreases with increasing fluence. Raman frequency ;red shift; occurs after He-ion implantation. Strain increases with increasing fluence. The hardness of the highly damaged layer increases monotonically with increasing fluence. Microstructural results demonstrate that the width of the damage band and the number density of observed dislocation loops increases with increasing fluence. High-resolution TEM images exhibit that He-ion implantation lead to the formation of planar defects and most of the lattice defects are of interstitial-type basal loops. The relationships of Raman intensity, lattice strain, swelling and hardness with He-implantation-induced lattice disorders are discussed.

  18. Multiscale calculations of dislocation bias in fcc Ni and bcc Fe model lattices

    NASA Astrophysics Data System (ADS)

    Chang, Z.; Olsson, P.; Terentyev, D.; Sandberg, N.

    2015-06-01

    In order to gain more insights on void swelling, dislocation bias is studied in this work. Molecular static simulations with empirical potentials are applied to map the dislocation-point defects interaction energies in both fcc Ni and bcc Fe model lattices. The interaction energies are then used to numerically solve the diffusion equation and obtain the dislocation bias. The importance of the dislocation core region is studied under a the temperature range 573-1173 K and the dislocation densities 1012-1015m-2 . The results show that larger dislocation bias is found in the fcc Ni than in the bcc Fe under different temperatures and dislocation densities. The anisotropic interaction energy model is used to obtain the dislocation bias and the result is compared to that obtained using the atomistic interaction model, the contribution from the core structure is then shown in both the Ni lattice and the Fe lattice.

  19. Effect of residual stress on the microstructure of GaN epitaxial films grown by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Wang, Haiyan; Wang, Wenliang; Yang, Weijia; Zhu, Yunnong; Lin, Zhiting; Li, Guoqiang

    2016-04-01

    The stress-free GaN epitaxial films have been directly grown by pulsed laser deposition (PLD) at 850 °C, and the effect of different stress on the microstructure of as-grown GaN epitaxial films has been explored in detail. The as-grown stress-free GaN epitaxial films exhibit very smooth surface without any particles and grains, which is confirmed by the smallest surface root-mean-square roughness of 2.3 nm measured by atomic force microscopy. In addition, they also have relatively high crystalline quality, which is proved by the small full-width at half maximum values of GaN(0002) and GaN (10 1 bar 2) X-ray rocking curves as 0.27° and 0.68°, respectively. However, when the growth temperature is lower or higher than 850 °C, internal or thermal stress would be increased in as-grown GaN epitaxial films. To release the larger stress, a great number of dislocations are generated. Many irregular particulates, hexagonal GaN gains and pits are therefore produced on the films surface, and the crystalline quality is greatly reduced consequently. This work has demonstrated the direct growth of stress-free GaN epitaxial films with excellent surface morphology and high crystalline quality by PLD, and presented a comprehensive study on the origins and the effect of stress in GaN layer. It is instructional to achieve high-quality nitride films by PLD, and shows great potential and broad prospect for the further development of high-performance GaN-based devices.

  20. Structural and morphological properties of GaN buffer layers grown by ammonia molecular beam epitaxy on SiC substrates for AlGaN/GaN high electron mobility transistors

    SciTech Connect

    Corrion, A. L.; Poblenz, C.; Wu, F.; Speck, J. S.

    2008-05-01

    The impact of growth conditions on the surface morphology and structural properties of ammonia molecular beam epitaxy GaN buffers layers on SiC substrates was investigated. The threading dislocation (TD) density was found to decrease with decreasing NH{sub 3}:Ga flux ratio, which corresponded to an increase in surface roughness and reduction in residual compressive lattice mismatch stress. Furthermore, the dislocation density and compressive stress decreased for increasing buffer thickness. TD inclination was proposed to account for these observations. Optimized surface morphologies were realized at high NH{sub 3}:Ga flux ratios and were characterized by monolayer-high steps, spiral hillocks, and pyramidal mounds, with rms roughness of {approx}1.0 nm over 2x2 {mu}m{sup 2} atomic force microscopy images. Smooth surface morphologies were realized over a large range of growth temperatures and fluxes, and growth rates of up to 1 {mu}m/h were achieved. TD densities in the buffers as low as 3x10{sup 9} cm{sup -2} were demonstrated. These buffers were highly insulating and were used in recently reported AlGaN/GaN HEMTs with power densities of >11 W/mm at 4 and 10 GHz.

  1. Interfacial Structure and Chemistry of GaN on Ge(111)

    NASA Astrophysics Data System (ADS)

    Zhang, Siyuan; Zhang, Yucheng; Cui, Ying; Freysoldt, Christoph; Neugebauer, Jörg; Lieten, Ruben R.; Barnard, Jonathan S.; Humphreys, Colin J.

    2013-12-01

    The interface of GaN grown on Ge(111) by plasma-assisted molecular beam epitaxy is resolved by aberration corrected scanning transmission electron microscopy. A novel interfacial structure with a 5∶4 closely spaced atomic bilayer is observed that explains why the interface is flat, crystalline, and free of GeNx. Density functional theory based total energy calculations show that the interface bilayer contains Ge and Ga atoms, with no N atoms. The 5∶4 bilayer at the interface has a lower energy than a direct stacking of GaN on Ge(111) and enables the 5∶4 lattice-matching growth of GaN.

  2. Geometry of dislocated de Broglie waves

    SciTech Connect

    Holland, P.R.

    1987-04-01

    The geometrical structures implicit in the de Broglie waves associated with a relativistic charged scalar quantum mechanical particle in an external field are analyzed by employing the ray concept of the causal interpretation. It is shown how an osculating Finslerian metric tensor, a torsion tensor, and a tetrad field define respectively the strain, the dislocation density, and the Burgers vector in the natural state of the wave, which is a non-Riemannian space of distant parallelism. A quantum torque determined by the quantum potential is introduced and the example of a screw dislocated wave is discussed.

  3. Mesoscale modeling of dislocations in molecular crystals

    NASA Astrophysics Data System (ADS)

    Lei, Lei; Koslowski, Marisol

    2011-02-01

    Understanding the inelastic deformation of molecular crystals is of fundamental importance to the modeling of the processing of drugs in the pharmaceutical industry as well as to the initiation of detonation in high energy density materials. In this work, we present dislocation dynamics simulations of the deformation of two molecular crystals of interest in the pharmaceutical industry, sucrose and paracetamol. The simulations calculate the yield stress of sucrose and paracetamol in good agreement with experimental observation and predict the anisotropy in the mechanical response observed in these materials. Our results show that dislocation dynamics is an effective tool to study plastic deformation in molecular crystals.

  4. Electrical spin injection and detection of spin precession in room temperature bulk GaN lateral spin valves

    SciTech Connect

    Bhattacharya, Aniruddha; Baten, Md Zunaid; Bhattacharya, Pallab

    2016-01-25

    We report the measurement of diffusive electronic spin transport characteristics in an epitaxial wurtzite GaN lateral spin valve at room temperature. Hanle spin precession and non-local spin accumulation measurements have been performed with the spin valves fabricated with FeCo/MgO spin contacts. Electron spin relaxation length and spin-flip lifetime of 176 nm and 37 ps, respectively, are derived from analysis of results obtained from four-terminal Hanle spin precession measurements at 300 K. The role of dislocations and defects in bulk GaN has also been examined in the context of electronic spin relaxation dynamics.

  5. Including dislocation flux in a continuum crystal plasticity model to produce size scale effects

    SciTech Connect

    Becker, R; Arsenlis, A; Bulatov, V V; Parks, D M

    2004-02-13

    A novel model has been developed to capture size scale and gradient effects within the context of continuum crystal plasticity by explicitly incorporating details of dislocation transport, coupling dislocation transport to slip, evolving spatial distributions of dislocations consistent with the flux, and capturing the interactions among various dislocation populations. Dislocation flux and density are treated as nodal degrees of freedom in the finite element model, and they are determined as part of the global system of equations. The creation, annihilation and flux of dislocations between elements are related by transport equations. Crystallographic slip is coupled to the dislocation flux and the stress state. The resultant gradients in dislocation density and local lattice rotations are analyzed for geometrically necessary and statistically stored dislocation contents that contribute to strength and hardening. Grain boundaries are treated as surfaces where dislocation flux is restricted depending on the relative orientations of the neighboring grains. Numerical results show different behavior near free surfaces and non-deforming surfaces resulting from differing levels of dislocation transmission. Simulations also show development of dislocation pile-ups at grain boundaries and an increase in flow strength reminiscent of the Hall-Petch model. The dislocation patterns have a characteristic size independent of the numerical discretization.

  6. Modeling and 2-D discrete simulation of dislocation dynamics for plastic deformation of metal

    NASA Astrophysics Data System (ADS)

    Liu, Juan; Cui, Zhenshan; Ou, Hengan; Ruan, Liqun

    2013-05-01

    Two methods are employed in this paper to investigate the dislocation evolution during plastic deformation of metal. One method is dislocation dynamic simulation of two-dimensional discrete dislocation dynamics (2D-DDD), and the other is dislocation dynamics modeling by means of nonlinear analysis. As screw dislocation is prone to disappear by cross-slip, only edge dislocation is taken into account in simulation. First, an approach of 2D-DDD is used to graphically simulate and exhibit the collective motion of a large number of discrete dislocations. In the beginning, initial grains are generated in the simulation cells according to the mechanism of grain growth and the initial dislocation is randomly distributed in grains and relaxed under the internal stress. During the simulation process, the externally imposed stress, the long range stress contribution of all dislocations and the short range stress caused by the grain boundaries are calculated. Under the action of these forces, dislocations begin to glide, climb, multiply, annihilate and react with each other. Besides, thermal activation process is included. Through the simulation, the distribution of dislocation and the stress-strain curves can be obtained. On the other hand, based on the classic dislocation theory, the variation of the dislocation density with time is described by nonlinear differential equations. Finite difference method (FDM) is used to solve the built differential equations. The dislocation evolution at a constant strain rate is taken as an example to verify the rationality of the model.

  7. Dislocation dynamics. I. A proposed methodology for deformation micromechanics

    SciTech Connect

    Amodeo, R.J.; Ghoniem, N.M. Nuclear Engineering Department, University of California, Los Angeles, Los Angeles, California 90024 )

    1990-04-01

    A new methodology in computational micromechanics, dislocation dynamics (DD), is introduced. Dislocation dynamics is developed for examining the dynamic behavior of dislocation distributions in solid materials. Under conditions of externally applied stress, dislocations exhibit glide with a velocity proportional to a power of the applied stress {sigma}{sup {ital m}} and climb motion with a velocity that is a function of the applied stress and temperature. These motions result from long-range force fields, comprising both externally applied stress and long-range interactions between individual dislocations. Short-range reactions are represented as discrete events. The DD methodology is to be differentiated from particle methods in statistical mechanics (e.g., molecular dynamics and the Monte Carlo method) in two respects. First, DD is developed to study the dynamical behavior of defects'' in the solid. Generally, the density of defects is less than that of the particles that make up the solid. Second, the small number of dislocations allows for a complete dynamical representation of the evolution of dislocations in the material medium without the requirement of statistical averaging. The purpose of the DD methodology is to bridge the gap between experimentally observed phenomena and theoretical descriptions of dislocation aggregates, particularly the evolution of self-organized dislocation structures under temperature, stress, and irradiation conditions.

  8. Dislocations in complex materials.

    PubMed

    Chisholm, Matthew F; Kumar, Sharvan; Hazzledine, Peter

    2005-02-04

    Deformation of metals and alloys by dislocations gliding between well-separated slip planes is a well-understood process, but most crystal structures do not possess such simple geometric arrangements. Examples are the Laves phases, the most common class of intermetallic compounds and exist with ordered cubic, hexagonal, and rhombohedral structures. These compounds are usually brittle at low temperatures, and transformation from one structure to another is slow. On the basis of geometric and energetic considerations, a dislocation-based mechanism consisting of two shears in different directions on adjacent atomic planes has been used to explain both deformation and phase transformations in this class of materials. We report direct observations made by Z-contrast atomic resolution microscopy of stacking faults and dislocation cores in the Laves phase Cr2Hf. These results show that this complex dislocation scheme does indeed operate in this material. Knowledge gained of the dislocation core structure will enable improved understanding of deformation mechanisms and phase transformation kinetics in this and other complex structures.

  9. Effective mobility of dislocations from systematic coarse-graining

    NASA Astrophysics Data System (ADS)

    Kooiman, M.; Hütter, M.; Geers, MGD

    2015-06-01

    The dynamics of large amounts of dislocations governs the plastic response of crystalline materials. In this contribution we discuss the relation between the mobility of discrete dislocations and the resulting flow rule for coarse-grained dislocation densities. The mobilities used in literature on these levels are quite different, for example in terms of their intrinsic the stress dependence. To establish the relation across the scales, we have derived the macroscopic evolution equations of dislocation densities from the equations of motion of individual dislocations by means of systematic coarse-graining. From this, we can identify a memory kernel relating the driving force and the flux of dislocations. This kernel can be considered as an effective macroscopic mobility with two contributions; a direct contribution related to the overdamped motion of individual dislocations, and an emergent contribution that arises from time correlations of fluctuations in the Peach-Koehler force. Scaling analysis shows that the latter contribution is dominant for dislocations in metals at room temperature. We also discuss several concerns related to the separation of timescales.

  10. Localized deformation and hardening in irradiated metals: Three-dimensional discrete dislocation dynamics simulations

    NASA Astrophysics Data System (ADS)

    Khraishi, Tariq A.; Zbib, Hussein M.; de La Rubia, Tomas Diaz; Victoria, Max

    2002-04-01

    When irradiated, metals undergo significant internal damage accumulation and degradation of mechanical properties. Damage takes the form of a high number density of nanosize defect clusters (stacking-fault tetrahedrons (SFTs) or interstitial loops). The alteration of mechanical properties is manifested in a hardening behavior and localized plastic deformation in defect-free channels. This work uses discrete dislocation dynamics (DD) to capture these effects. It sets the framework for the elastic interaction between gliding dislocations and defect clusters and details a scheme for loop unfaulting and absorption into dislocations. Here, it is shown that SFTs represents weaker pinning points for dislocation motion than parent dislocation loops. It is also shown that appreciable yield drop can be attributed to high density of defects decorating the dislocations. Strong obstacles cause dislocations in Cu to continually double cross slip causing the formation of defect-free channels. Finally, the correlation between yield stress increase and defect number density is in excellent agreement with the experiment.

  11. The effect of length scale on the determination of geometrically necessary dislocations via EBSD continuum dislocation microscopy.

    PubMed

    Ruggles, T J; Rampton, T M; Khosravani, A; Fullwood, D T

    2016-05-01

    Electron backscatter diffraction (EBSD) dislocation microscopy is an important, emerging field in metals characterization. Currently, calculation of geometrically necessary dislocation (GND) density is problematic because it has been shown to depend on the step size of the EBSD scan used to investigate the sample. This paper models the change in calculated GND density as a function of step size statistically. The model provides selection criteria for EBSD step size as well as an estimate of the total dislocation content. Evaluation of a heterogeneously deformed tantalum specimen is used to asses the method. Copyright © 2016 Elsevier B.V. All rights reserved.

  12. Electrical properties of dislocations in III-Nitrides

    SciTech Connect

    Cavalcoli, D.; Minj, A.; Pandey, S.; Cavallini, A.

    2014-02-21

    Research on GaN, AlN, InN (III-N) and their alloys is achieving new heights due their high potential applications in photonics and electronics. III-N semiconductors are mostly grown epitaxially on sapphire, and due to the large lattice mismatch and the differences in the thermal expansion coefficients, the structures usually contain many threading dislocations (TDs). While their structural properties have been widely investigated, their electrical characteristics and their role in the transport properties of the devices are still debated. In the present contribution we will show conductive AFM studies of TDs in GaN and Al/In GaN ternary alloys to evidence the role of strain, different surface polarity and composition on their electrical properties. Local I-V curves measured at TDs allowed us to clarify their role in the macroscopic electrical properties (leakage current, mobilities) of III-N based devices. Samples obtained by different growers (AIXTRON, III-V Lab) were studied. The comparison between the results obtained in the different alloys allowed us to understand the role of In and Al on the TDs electrical properties.

  13. Theoretical study for heterojunction surface of NEA GaN photocathode dispensed with Cs activation

    NASA Astrophysics Data System (ADS)

    Xia, Sihao; Liu, Lei; Wang, Honggang; Wang, Meishan; Kong, Yike

    2016-09-01

    For the disadvantages of conventional negative electron affinity (NEA) GaN photocathodes activated by Cs or Cs/O, new-type NEA GaN photocathodes with heterojunction surface dispensed with Cs activation are investigated based on first-principle study with density functional theory. Through the growth of an ultrathin n-type GaN cap layer on p-type GaN emission layer, a p-n heterojunction is formed on the surface. According to the calculation results, it is found that Si atoms tend to replace Ga atoms to result in an n-type doped cap layer which contributes to the decreasing of work function. After the growth of n-type GaN cap layer, the atom structure near the p-type emission layer is changed while that away from the surface has no obvious variations. By analyzing the E-Mulliken charge distribution of emission surface with and without cap layer, it is found that the positive charge of Ga and Mg atoms in the emission layer decrease caused by the cap layer, while the negative charge of N atom increases. The conduction band moves downwards after the growth of cap layer. Si atom produces donor levels around the valence band maximum. The absorption coefficient of GaN emission layer decreases and the reflectivity increases caused by n-type GaN cap layer.

  14. Photoelectrochemical water splitting on nanoporous GaN thin films for energy conversion under visible light

    NASA Astrophysics Data System (ADS)

    Cao, Dezhong; Xiao, Hongdi; Fang, Jiacheng; Liu, Jianqiang; Gao, Qingxue; Liu, Xiangdong; Ma, Jin

    2017-01-01

    Nanoporous (NP) GaN thin films, which were fabricated by an electrochemical etching method at different voltages, were used as photoelectrodes during photoelectrochemical (PEC) water splitting in 1 M oxalic acid solution. Upon illumination at a power density of 100 mW cm-2 (AM 1.5), water splitting is observed in NP GaN thin films, presumably resulting from the valence band edge which is more positive than the redox potential of the oxidizing species. In comparison with NP GaN film fabricated at 8 V, NP GaN obtained at 18 V shows nearly twofold enhancement in photocurrent with the maximum photo-to-hydrogen conversion efficiency of 1.05% at ~0 V (versus Ag/AgCl). This enhancement could be explained with (i) the increase of surface area and surface states, and (ii) the decrease of resistances and carrier concentration in the NP GaN thin films. High stability of the NP GaN thin films during the PEC water splitting further confirms that the NP GaN thin film could be applied to the design of efficient solar cells and solar fuel devices.

  15. Dislocation climb models from atomistic scheme to dislocation dynamics

    NASA Astrophysics Data System (ADS)

    Niu, Xiaohua; Luo, Tao; Lu, Jianfeng; Xiang, Yang

    2017-02-01

    We develop a mesoscopic dislocation dynamics model for vacancy-assisted dislocation climb by upscalings from a stochastic model on the atomistic scale. Our models incorporate microscopic mechanisms of (i) bulk diffusion of vacancies, (ii) vacancy exchange dynamics between bulk and dislocation core, (iii) vacancy pipe diffusion along the dislocation core, and (iv) vacancy attachment-detachment kinetics at jogs leading to the motion of jogs. Our mesoscopic model consists of the vacancy bulk diffusion equation and a dislocation climb velocity formula. The effects of these microscopic mechanisms are incorporated by a Robin boundary condition near the dislocations for the bulk diffusion equation and a new contribution in the dislocation climb velocity due to vacancy pipe diffusion driven by the stress variation along the dislocation. Our climb formulation is able to quantitatively describe the translation of prismatic loops at low temperatures when the bulk diffusion is negligible. Using this new formulation, we derive analytical formulas for the climb velocity of a straight edge dislocation and a prismatic circular loop. Our dislocation climb formulation can be implemented in dislocation dynamics simulations to incorporate all the above four microscopic mechanisms of dislocation climb.

  16. The relationship between strain geometry and geometrically necessary dislocations

    NASA Astrophysics Data System (ADS)

    Hansen, Lars; Wallis, David

    2016-04-01

    single crystals and aggregates of olivine for which the strain geometry is known. Tested geometries include constrictional strain, flattening strain, and plane strain. We use measured lattice curvatures to calculate the densities and spatial distributions of geometrically necessary dislocations. Dislocation densities are calculated for each of the major dislocation types in olivine. These densities are then used to estimate the plastic strain geometry under the assumption that the population of geometrically necessary dislocations accurately represents the relative activity of different dislocations during deformation. Our initial results demonstrate compelling relationships between the imposed strain geometry and the calculated plastic strain geometry. In addition, the calculated plastic strain geometry is linked to the distribution of crystallographic orientations, giving insight into the nature of plastic anisotropy in textured olivine aggregates. We present this technique as a new microstructural tool for assessing the kinematic history of deformed rocks.

  17. Phonon Drag Dislocations at High Pressures

    SciTech Connect

    Wolfer, W.G.

    1999-10-19

    Phonon drag on dislocations is the dominant process which determines the flow stress of metals at elevated temperatures and at very high plastic deformation rates. The dependence of the phonon drag on pressure or density is derived using a Mie-Grueneisen equation of state. The phonon drag is shown to increase nearly linearly with temperature but to decrease with density or pressure. Numerical results are presented for its variation for shock-loaded copper and aluminum. In these cases, density and temperature increase simultaneously, resulting in a more modest net increase in the dislocation drag coefficient. Nevertheless, phonon drag increases by more than an order of magnitude during shock deformations which approach melting. Since the dependencies of elastic moduli and of the phonon drag coefficient on pressure and temperature are fundamentally different, the effect of pressure on the constitutive law for plastic deformation can not simply be accounted for by its effect on the elastic shear modulus.

  18. Oscillatory deviations from Matthiessen’s rule due to interacting dislocations

    NASA Astrophysics Data System (ADS)

    Fu, Chu-Liang; Li, Mingda

    2017-08-01

    We theoretically examine the validity of Matthiessen’s rule caused by strong dislocation-dislocation interaction using a fully quantized dislocation field, where its degree of deviation is quantified at arbitrary electron energy, dislocation-electron and dislocation-dislocation distances and interaction strengths. Contrary to intuition, we show that the electron relaxation rate deviates from the Matthiessen’s rule in an oscillatory way as a function of inter-dislocation distance, instead of monotonically. In addition, we show quantitatively that the deviation is larger in a material with lower mass density, higher Poisson ratio and higher elastic moduli. This study could serve as a computational tool to investigate the electronic behavior of a highly-dislocated system at a full quantum field theoretical level.

  19. Dislocation Substructure in the Cold-Rolled Ni-20 Mass Pct Cr Alloy Analyzed by X-ray Diffraction, Positron Annihilation Lifetime, and Transmission Electron Microscopy

    NASA Astrophysics Data System (ADS)

    Yonemura, Mitsuharu; Inoue, Koji

    2016-12-01

    The systematic change in the dislocation density and characteristics that develop under cold rolling as a simulated deformation was studied in order to examine the fundamental behavior of dislocations in terms of the dislocation substructure formation. In particular, the dislocation density was quantified by X-ray line profile analysis (XLPA), which is effective for quantifying the dislocation density and character; positron annihilation lifetime (PAL), which is sensitive to vacancy-type lattice defects; the Bailey-Hirsch equation from the hardness (Hv); and transmission electron microscopy (TEM). The strain dependency of the dislocation density analyzed by XLPA, PAL, TEM, and Hv showed a similar tendency with an increase in the dislocation. In particular, the dislocation density by XLPA had good agreement with the results of TEM at low strain levels and with PAL at high strain levels. As a result, a combination of these techniques successfully showed the behavior of the dislocation substructure.

  20. Dislocation core reconstruction induced by carbon segregation in bcc iron

    NASA Astrophysics Data System (ADS)

    Ventelon, Lisa; Lüthi, B.; Clouet, E.; Proville, L.; Legrand, B.; Rodney, D.; Willaime, F.

    2015-06-01

    The relative stability of dislocation core configurations in body-centered-cubic metals is profoundly modified by the presence of solutes. Considering the Fe(C) system, we demonstrate by using density functional theory that carbon atoms destabilize the usual easy core to the benefit of the hard core configuration of the screw dislocation, which is unstable in pure metals. The carbon atom is at the center of a regular prism in a cementitelike local environment. The same dislocation core reconstruction is also found with other solutes (B, N, O) and in W(C). This unexpected low-energy configuration induces a strong solute-dislocation attraction, leading to dislocation core saturation by solute atoms, even for very low bulk solute concentrations. This core reconstruction will constitute an essential factor to account for in solute-segregation related phenomena, such as strain aging.

  1. Quantitative calculation of dislocation mobility

    SciTech Connect

    Swaminarayan, S.; Preston, D.L.

    1999-07-01

    The authors present a new method to calculate the response of dislocations to applied stress. This new method, called the dislocation treadmill, can be used to study the effect of vacancies, interstitials, stresses, strain rate, temperature, etc., on the steady state velocity of the dislocation. The authors demonstrate the use of the method by calculating the response of a dislocation to a constant applied shear stress.

  2. Ab initio phonon scattering by dislocations

    NASA Astrophysics Data System (ADS)

    Wang, Tao; Carrete, Jesús; van Roekeghem, Ambroise; Mingo, Natalio; Madsen, Georg K. H.

    2017-06-01

    Heat management in thermoelectric and power devices as well as in random access memories poses a grand challenge and can make the difference between a working and an abandoned device design. Despite the prevalence of dislocations in all these technologies, the modeling of their thermal resistance is based on 50-year-old analytical approximations, whose simplicity was driven by practical limitations rather than physical insight. We introduce an efficient ab initio approach based on Green's functions computed by two-dimensional reciprocal space integration. By combining elasticity theory and density functional theory, we calculate the scattering strength of a 90∘ misfit edge dislocation in Si. Because of the breakdown of the Born approximation, earlier literature models fail, even qualitatively. We find that a dislocation density larger than 109cm-2 is necessary to substantially influence thermal conductivity at room temperature and above. We quantify how much of the reduction of thermal conductivity measured in nanograined samples can be explained by realistic dislocation concentrations.

  3. Behavior of dislocations in silicon

    SciTech Connect

    Sumino, Koji

    1995-08-01

    A review is given of dynamic behavior of dislocations in silicon on the basis of works of the author`s group. Topics taken up are generation, motion and multiplication of dislocations as affected by oxygen impurities and immobilization of dislocations due to impurity reaction.

  4. Dislocated Worker Project.

    ERIC Educational Resources Information Center

    1988

    Due to the severe economic decline in the automobile manufacturing industry in southeastern Michigan, a Dislocated Workers Program has been developed through the partnership of the Flint Area Chamber of Commerce, three community colleges, the National Center for Research in Vocational Education, the Michigan State Department of Education, the…

  5. Dislocated Worker Project.

    ERIC Educational Resources Information Center

    1988

    Due to the severe economic decline in the automobile manufacturing industry in southeastern Michigan, a Dislocated Workers Program has been developed through the partnership of the Flint Area Chamber of Commerce, three community colleges, the National Center for Research in Vocational Education, the Michigan State Department of Education, the…

  6. Elbow fractures and dislocations.

    PubMed

    Little, Kevin J

    2014-07-01

    Elbow fractures are common in pediatric patients. Most injuries to the pediatric elbow are stable and require simple immobilization; however, more severe fractures can occur, often requiring operative stabilization and/or close monitoring. This article highlights the common fractures and dislocations about the pediatric elbow and discusses the history, evaluation, and treatment options for specific injuries.

  7. Ga vacancy induced ferromagnetism enhancement and electronic structures of RE-doped GaN

    NASA Astrophysics Data System (ADS)

    Zhong, Guohua; Zhang, Kang; He, Fan; Ma, Xuhang; Lu, Lanlan; Liu, Zhuang; Yang, Chunlei

    2012-09-01

    Because of their possible applications in spintronic and optoelectronic devices, GaN dilute magnetic semiconductors (DMSs) doped by rare-earth (RE) elements have attracted much attention since the high Curie temperature was obtained in RE-doped GaN DMSs and a colossal magnetic moment was observed in the Gd-doped GaN thin film. We have systemically studied the GaN DMSs doped by RE elements (La, Ce-Yb) using the full-potential linearized augmented plane wave method within the framework of density functional theory and adding the considerations of the electronic correlation and the spin-orbital coupling effects. We have studied the electronic structures of DMSs, especially for the contribution from f electrons. The origin of magnetism, magnetic interaction and the possible mechanism of the colossal magnetic moment were explored. We found that, for materials containing f electrons, electronic correlation was usually strong and the spin-orbital coupling was sometimes crucial in determining the magnetic ground state. It was found that GaN doped by La was non-magnetic. GaN doped by Ce, Nd, Pm, Eu, Gd, Tb and Tm are stabilized at antiferromagnetic phase, while GaN doped by other RE elements show strong ferromagnetism which is suitable materials for spintronic devices. Moreover, we have identified that the observed large enhancement of magnetic moment in GaN is mainly caused by Ga vacancies (3.0μB per Ga vacancy), instead of the spin polarization by magnetic ions or originating from N vacancies. Various defects, such as substitutional Mg for Ga, O for N under the RE doping were found to bring a reduction of ferromagnetism. In addition, intermediate bands were observed in some systems of GaN:RE and GaN with intrinsic defects, which possibly opens the potential application of RE-doped semiconductors in the third generation high efficiency photovoltaic devices.

  8. Annealing effects on polycrystalline GaN using nitrogen and ammonia ambients

    NASA Astrophysics Data System (ADS)

    Ariff, A.; Zainal, N.; Hassan, Z.

    2016-09-01

    This paper describes effects of using post-annealing treatment in different conditions on the properties of polycrystalline GaN layer grown on m-plane sapphire substrate by electron beam (e-beam) evaporator. Without annealing, GaN surface was found to have a low RMS roughness with agglomeration of GaN grains in a specific direction and the sample consisted of gallium oxide (Ga2O3) material. When the post-annealing treatment was carried out in N2 ambient at 650 °C, initial re-crystallization of the GaN grains was observed while the evidence of Ga2O3 almost disappeared. As the NH3 annealing was conducted at 950 °C, more effect of re-crystallization occurred but with less grains coalescence. Three dominant XRD peaks of GaN in (10 1 bar 0) , (0002) and (10 1 bar 1) orientations were evident. Near band edge (NBE) related emission in GaN was also observed. The significant improvement was attributed to simultaneous recrystallization and effective reduction of N deficiency density. The post-annealing in a mixture of N2 and NH3 ambient at 950 °C was also conducted, but has limited the effectiveness of the N atoms to incorporate on the GaN layer due to 'clouding' effect by the inert N2 gas. Further increase in the annealing temperature at 980 °C and 1100 °C, respectively caused severe deteriorations of the structural and optical properties of the GaN layer. Overall, this work demonstrated initial potential in improving polycrystalline GaN material in simple and inexpensive manner.

  9. Dislocation core properties of β-tin: a first-principles study

    NASA Astrophysics Data System (ADS)

    Bhatia, M. A.; Azarnoush, M.; Adlakha, I.; Lu, G.; Solanki, K. N.

    2017-02-01

    Dislocation core properties of tin (β-Sn) were investigated using the semi-discrete variational Peierls–Nabarro (SVPN) model. The SVPN model, which connects the continuum elasticity treatment of the long-range strain field around a dislocation with an approximate treatment of the dislocation core, was employed to calculate various core properties, including the core energetics, widths, and Peierls stresses for different dislocation structures. The role of core energetics and properties on dislocation character and subsequent slip behavior in β-Sn was investigated. For instance, this work shows that a widely spread dislocation core on the {110} plane as compared to dislocations on the {100} and {101} planes. Physically, the narrowing or widening of the core will significantly affect the mobility of dislocations as the Peierls stress is exponentially related to the dislocation core width in β-Sn. In general, the Peierls stress for the screw dislocation was found to be orders of magnitude higher than the edge dislocation, i.e., the more the edge component of a mixed dislocation, the greater the dislocation mobility (lower the Peierls stress). The largest Peierls stress observed was 365 MPa for the dislocation on the {101} plane. Furthermore, from the density plot, we see a double peak for the 0° (screw) and 30° dislocations which suggests the dissociation of dislocations along these planes. Thus, for the {101} < \\bar{1}01> slip system, we observed dislocation dissociation into three partials with metastable states. Overall, this work provides qualitative insights that aid in understanding the plastic deformation in β-Sn.

  10. Investigation of dislocations in 8° off-axis 4H-SiC epilayer

    NASA Astrophysics Data System (ADS)

    Miao, Rui-Xia; Zhang, Yu-Ming; Zhang, Yi-Men; Tang, Xiao-Yan; Gai, Qing-Feng

    2010-07-01

    This paper reports that the etching morphology of dislocations in 8° off-axis 4H-SiC epilayer is observed by using a scanning electronic microscope. It is found that different types of dislocations correspond with different densities and basal plane dislcation (BPD) array and threading edge dislocation (TED) pileup group lie along some certain crystal directions in the epilayer. It is concluded that the elastic energy of threading screw dislocations (TSDs) is highest and TEDs is lowest among these dislocations, so the density of TSDs is lower than TEDs. The BPDs can convert to TEDs but TSDs can only propagate into the epilyer in spite of the higher elastic energy than TEDs. The reason of the form of BPDs array in epilayer is that the big step along the basal plane caused by face defects blocked the upstream atoms, and TEDs pileup group is that the dislocations slide is blocked by dislocation groups in epilayer.

  11. Multiscale characterization of dislocation processes in Al 5754

    NASA Astrophysics Data System (ADS)

    Kacher, Josh; Mishra, Raja K.; Minor, Andrew M.

    2015-07-01

    Multiscale characterization was performed on an Al-Mg alloy, Al 5754 O-temper, including in situ mechanical deformation in both the scanning electron microscope and the transmission electron microscope. Scanning electron microscopy characterization showed corresponding inhomogeneity in the dislocation and Mg distribution, with higher levels of Mg correlating with elevated levels of dislocation density. At the nanoscale, in situ transmission electron microscopy straining experiments showed that dislocation propagation through the Al matrix is characterized by frequent interactions with obstacles smaller than the imaging resolution that resulted in the formation of dislocation debris in the form of dislocation loops. Post-mortem chemical characterization and comparison to dislocation loop behaviour in an Al-Cr alloy suggests that these obstacles are small Mg clusters. Previous theoretical work and indirect experimental evidence have suggested that these Mg nanoclusters are important factors contributing to strain instabilities in Al-Mg alloys. This study provides direct experimental characterization of the interaction of glissile dislocations with these nanoclusters and the stress needed for dislocations to overcome them.

  12. GaN nanowires with pentagon shape cross-section by ammonia-source molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Lin, Yong; Leung, Benjamin; Li, Qiming; Figiel, Jeffrey. J.; Wang, George T.

    2015-10-01

    Ammonia-based molecular beam epitaxy (NH3-MBE) was used to grow catalyst-assisted GaN nanowires on (1 1 bar 02) r-plane sapphire substrates. Dislocation free [ 11 2 bar 0 ] oriented nanowires are formed with pentagon shape cross-section, instead of the usual triangular shape facet configuration. Specifically, the cross-section is the result of the additional two nonpolar { 10 1 bar 0 } side facets, which appear due to a decrease in relative growth rate of the { 10 1 bar 0 } facets to the { 10 1 bar 1 } and { 10 1 bar 1 } facets under the growth regime in NH3-MBE. Compared to GaN nanowires grown by Ni-catalyzed metal-organic chemical vapor deposition, the NH3-MBE grown GaN nanowires show more than an order of magnitude increase in band-edge to yellow luminescence intensity ratio, as measured by cathodoluminescence, indicating improved microstructural and optical properties.

  13. Droplet heteroepitaxy of zinc-blende vs. wurtzite GaN quantum dots

    NASA Astrophysics Data System (ADS)

    Reese, C.; Jeon, S.; Hill, T.; Jones, C.; Shusterman, S.; Yacoby, Y.; Clarke, R.; Deng, H.; Goldman, Rs

    We have developed a GaN droplet heteroepitaxy process based upon plasma-assisted molecular-beam epitaxy. Using various surface treatments and Ga deposition parameters, we have demonstrated polycrystalline, zinc-blende (ZB), and wurtzite (WZ) GaN quantum dots (QDs) on Si(001), r-Al2O3, Si(111), and c-GaN substrates. For the polar substrates (i.e. Si(111) and c-GaN), high-resolution transmission electron microscopy and coherent Bragg rod analysis reveals the formation of coherent WZ GaN QDs with nitridation-temperature-dependent sizes and densities. For the non-polar substrates (i.e. Si(001) and r-Al2O3) , QDs with strong near-band photoluminescence emission are observed and ZB GaN QD growth on Si(001) is demonstrated for the first time.

  14. Spectroscopic investigation of native defect induced electron-phonon coupling in GaN nanowires

    NASA Astrophysics Data System (ADS)

    Parida, Santanu; Patsha, Avinash; Bera, Santanu; Dhara, Sandip

    2017-07-01

    The integration of advanced optoelectronic properties in nanoscale devices of group III nitride can be realized by understanding the coupling of charge carriers with optical excitations in these nanostructures. The native defect induced electron-phonon coupling in GaN nanowires are reported using various spectroscopic studies. The GaN nanowires having different native defects are grown in an atmospheric pressure chemical vapor deposition technique. X-ray photoelectron spectroscopic analysis revealed the variation of Ga/N ratios in nanowires having possible native defects, with respect to their growth parameters. The analysis of the characteristic features of electron-phonon coupling in the Raman spectra show the variations in carrier density and mobility, with respect to the native defects in unintentionally doped GaN nanowires. The radiative recombination of donor acceptor pair transitions and the corresponding LO phonon replicas observed in photoluminescence studies further emphasize the role of native defects in electron-phonon coupling.

  15. One-step fabrication of porous GaN crystal membrane and its application in energy storage

    PubMed Central

    Zhang, Lei; Wang, Shouzhi; Shao, Yongliang; Wu, Yongzhong; Sun, Changlong; Huo, Qin; Zhang, Baoguo; Hu, Haixiao; Hao, Xiaopeng

    2017-01-01

    Single-crystal gallium nitride (GaN) membranes have great potential for a variety of applications. However, fabrication of single-crystalline GaN membranes remains a challenge owing to its chemical inertness and mechanical hardness. This study prepares large-area, free-standing, and single-crystalline porous GaN membranes using a one-step high-temperature annealing technique for the first time. A promising separation model is proposed through a comprehensive study that combines thermodynamic theories analysis and experiments. Porous GaN crystal membrane is processed into supercapacitors, which exhibit stable cycling life, high-rate capability, and ultrahigh power density, to complete proof-of-concept demonstration of new energy storage application. Our results contribute to the study of GaN crystal membranes into a new stage related to the elelctrochemical energy storage application. PMID:28281562

  16. One-step fabrication of porous GaN crystal membrane and its application in energy storage.

    PubMed

    Zhang, Lei; Wang, Shouzhi; Shao, Yongliang; Wu, Yongzhong; Sun, Changlong; Huo, Qin; Zhang, Baoguo; Hu, Haixiao; Hao, Xiaopeng

    2017-03-10

    Single-crystal gallium nitride (GaN) membranes have great potential for a variety of applications. However, fabrication of single-crystalline GaN membranes remains a challenge owing to its chemical inertness and mechanical hardness. This study prepares large-area, free-standing, and single-crystalline porous GaN membranes using a one-step high-temperature annealing technique for the first time. A promising separation model is proposed through a comprehensive study that combines thermodynamic theories analysis and experiments. Porous GaN crystal membrane is processed into supercapacitors, which exhibit stable cycling life, high-rate capability, and ultrahigh power density, to complete proof-of-concept demonstration of new energy storage application. Our results contribute to the study of GaN crystal membranes into a new stage related to the elelctrochemical energy storage application.

  17. One-step fabrication of porous GaN crystal membrane and its application in energy storage

    NASA Astrophysics Data System (ADS)

    Zhang, Lei; Wang, Shouzhi; Shao, Yongliang; Wu, Yongzhong; Sun, Changlong; Huo, Qin; Zhang, Baoguo; Hu, Haixiao; Hao, Xiaopeng

    2017-03-01

    Single-crystal gallium nitride (GaN) membranes have great potential for a variety of applications. However, fabrication of single-crystalline GaN membranes remains a challenge owing to its chemical inertness and mechanical hardness. This study prepares large-area, free-standing, and single-crystalline porous GaN membranes using a one-step high-temperature annealing technique for the first time. A promising separation model is proposed through a comprehensive study that combines thermodynamic theories analysis and experiments. Porous GaN crystal membrane is processed into supercapacitors, which exhibit stable cycling life, high-rate capability, and ultrahigh power density, to complete proof-of-concept demonstration of new energy storage application. Our results contribute to the study of GaN crystal membranes into a new stage related to the elelctrochemical energy storage application.

  18. Current mapping of nonpolar a-plane and polar c-plane GaN films by conductive atomic force microscopy

    NASA Astrophysics Data System (ADS)

    Xu, Shengrui; Jiang, Teng; Lin, Zhiyu; Zhao, Ying; Yang, Linan; Zhang, Jincheng; Li, Peixian; Hao, Yue

    2016-10-01

    Nonpolar (11-20) a-plane GaN and polar (0001) c-plane GaN films have been grown by metal organic chemical vapor deposition on r-plane (1-102) and c-plane (0001) sapphire substrates, respectively. Conductive atomic force microscopy (C-AFM) has been used to investigate the local conductivity of the films. C-AFM shows enhanced current conduction within the etch pits of c-plane GaN and triangular pits of a-plane GaN. The results indicate that the off-axis planes are more electrically active than c-plane and a-plane. Surprisingly, the C-AFM values in triangular pit of the a-plane GaN are much smaller than that in etch pits of the c-plane GaN. The dislocations type related current leakage mechanism is revealed for polar c-plane and nonpolar a-plane GaN films.

  19. [Calculation of dislocation destiny using X-ray diffraction for 4H-SiC homoepitaxial layers].

    PubMed

    Jia, Ren-xu; Zhang, Yu-ming; Zhang, Yi-men; Guo, Hui

    2010-07-01

    A theoretical and experimental study on calculating dislocation destiny for 4H-SiC homoepitaxial layers has been carried out. There is some difficulty in measuring dislocation density if it is more than 10(6) * cm(-2). In the paper, a theoretical analysis is made about the effects of dislocation density on the results of X-ray diffraction, and the relationship of dislocation density and FWHM spread is obtained. Then the X-ray diffraction curves of 4H-SiC in omego2theta with two different crystal faces are presented from which the density of dislocation is calculated. According to the result, the cause of dislocation origin is analyzed and the methods of decreasing dislocation density are proposed.

  20. Correlation between macroscopic transport parameters and microscopic electrical properties in GaN

    NASA Astrophysics Data System (ADS)

    Witte, H.; Krtschil, A.; Schrenk, E.; Fluegge, K.; Dadgar, A.; Krost, A.

    2005-02-01

    In GaN layers grown by metal-organic vapor phase epitaxy on sapphire substrates the temperature-dependent Hall (TDH) and photo-Hall-effect (PHE) measurements show essential differences between undoped and Si-doped GaN. In undoped GaN the maximum of the Hall mobility occurs at temperatures near 300K with a low value. In PHE, an illumination introduces an enhancement of the mobility and a decrease of the electron density. In contrast, in Si-doped GaN the maximum Hall mobility is higher by a factor of 10 and is observed at temperatures between 100 and 180K. The photoinduced changes in the mobility and electron density are only marginal. Intensity dependent PHE measurements suggest the existence of internal potential barriers caused by inhomogeneities in the undoped samples. These results are combined with the surface-potential roughness on a microscale, as determined by scanning surface-potential microscopy (SSPM). In SSPM the undoped layers show strong potential fluctuations while they are lower for the Si-doped GaN samples. A correlation among the rms roughness of the surface potential, the maximum Hall mobility in TDH, and the maximum changes of the photo-Hall mobility is observed. In undoped GaN the mobility seems to be determined by the scattering at inner potential barriers stemming from structural inhomogeneities.

  1. Molecular dynamics studies of defect formation during heteroepitaxial growth of InGaN alloys on (0001) GaN surfaces

    DOE PAGES

    Gruber, J.; Zhou, X. W.; Jones, R. E.; ...

    2017-05-15

    Here, we investigate the formation of extended defects during molecular-dynamics (MD) simulations of GaN and InGaN growth on (0001) and (11more » $$\\bar{2}$$0) wurtzite-GaN surfaces. The simulated growths are conducted on an atypically large scale by sequentially injecting nearly a million individual vapor-phase atoms towards a fixed GaN surface; we apply time-and-position-dependent boundary constraints that vary the ensemble treatments of the vapor-phase, the near-surface solid-phase, and the bulk-like regions of the growing layer. The simulations employ newly optimized Stillinger-Weber In-Ga-N-system potentials, wherein multiple binary and ternary structures are included in the underlying density-functional-theory training sets, allowing improved treatment of In-Ga-related atomic interactions. To examine the effect of growth conditions, we study a matrix of >30 different MD-growth simulations for a range of InxGa1-xN-alloy compositions (0 ≤ x ≤ 0.4) and homologous growth temperatures [0.50 ≤ T/T*m(x) ≤ 0.90], where T*m(x) is the simulated melting point. Growths conducted on polar (0001) GaN substrates exhibit the formation of various extended defects including stacking faults/polymorphism, associated domain boundaries, surface roughness, dislocations, and voids. In contrast, selected growths conducted on semi-polar (11$$\\bar{2}$$0) GaN, where the wurtzite-phase stacking sequence is revealed at the surface, exhibit the formation of far fewer stacking faults. We discuss variations in the defect formation with the MD growth conditions, and we compare the resulting simulated films to existing experimental observations in InGaN/GaN. Finally, while the palette of defects observed by MD closely resembles those observed in the past experiments, further work is needed to achieve truly predictive large-scale simulations of InGaN/GaN crystal growth using MD methodologies.« less

  2. Molecular dynamics studies of defect formation during heteroepitaxial growth of InGaN alloys on (0001) GaN surfaces

    NASA Astrophysics Data System (ADS)

    Gruber, J.; Zhou, X. W.; Jones, R. E.; Lee, S. R.; Tucker, G. J.

    2017-05-01

    We investigate the formation of extended defects during molecular-dynamics (MD) simulations of GaN and InGaN growth on (0001) and ( 11 2 ¯ 0 ) wurtzite-GaN surfaces. The simulated growths are conducted on an atypically large scale by sequentially injecting nearly a million individual vapor-phase atoms towards a fixed GaN surface; we apply time-and-position-dependent boundary constraints that vary the ensemble treatments of the vapor-phase, the near-surface solid-phase, and the bulk-like regions of the growing layer. The simulations employ newly optimized Stillinger-Weber In-Ga-N-system potentials, wherein multiple binary and ternary structures are included in the underlying density-functional-theory training sets, allowing improved treatment of In-Ga-related atomic interactions. To examine the effect of growth conditions, we study a matrix of >30 different MD-growth simulations for a range of InxGa1-xN-alloy compositions (0 ≤ x ≤ 0.4) and homologous growth temperatures [0.50 ≤ T/T*m(x) ≤ 0.90], where T*m(x) is the simulated melting point. Growths conducted on polar (0001) GaN substrates exhibit the formation of various extended defects including stacking faults/polymorphism, associated domain boundaries, surface roughness, dislocations, and voids. In contrast, selected growths conducted on semi-polar ( 11 2 ¯ 0 ) GaN, where the wurtzite-phase stacking sequence is revealed at the surface, exhibit the formation of far fewer stacking faults. We discuss variations in the defect formation with the MD growth conditions, and we compare the resulting simulated films to existing experimental observations in InGaN/GaN. While the palette of defects observed by MD closely resembles those observed in the past experiments, further work is needed to achieve truly predictive large-scale simulations of InGaN/GaN crystal growth using MD methodologies.

  3. Dislocation pinning effects induced by nano-precipitates during warm laser shock peening: Dislocation dynamic simulation and experiments

    NASA Astrophysics Data System (ADS)

    Liao, Yiliang; Ye, Chang; Gao, Huang; Kim, Bong-Joong; Suslov, Sergey; Stach, Eric A.; Cheng, Gary J.

    2011-07-01

    Warm laser shock peening (WLSP) is a new high strain rate surface strengthening process that has been demonstrated to significantly improve the fatigue performance of metallic components. This improvement is mainly due to the interaction of dislocations with highly dense nanoscale precipitates, which are generated by dynamic precipitation during the WLSP process. In this paper, the dislocation pinning effects induced by the nanoscale precipitates during WLSP are systematically studied. Aluminum alloy 6061 and AISI 4140 steel are selected as the materials with which to conduct WLSP experiments. Multiscale discrete dislocation dynamics (MDDD) simulation is conducted in order to investigate the interaction of dislocations and precipitates during the shock wave propagation. The evolution of dislocation structures during the shock wave propagation is studied. The dislocation structures after WLSP are characterized via transmission electron microscopy and are compared with the results of the MDDD simulation. The results show that nano-precipitates facilitate the generation of highly dense and uniformly distributed dislocation structures. The dislocation pinning effect is strongly affected by the density, size, and space distribution of nano-precipitates.

  4. Spatial organization of plastic deformation in single crystals with different structure of slip dislocation

    SciTech Connect

    Kunitsyna, T. S.; Teplyakova, L. A. Koneva, N. A.; Poltaranin, M. A.

    2015-10-27

    It is established that different structure of slip dislocation at the end of the linear hardening stage results in different distribution of dislocation charges in the volume of a single crystal. In the alloy with a near atomic order the slip of single dislocations leads to formation of planar structures—layers with the excess density of dislocations. In the alloy with long-range atomic order the slip of superdislocations brings the formation of the system of parallel rod-like charged dislocation linking.

  5. GaN MOSHEMT employing HfO2 as a gate dielectric with partially etched barrier

    NASA Astrophysics Data System (ADS)

    Han, Kefeng; Zhu, Lin

    2017-09-01

    In order to suppress the gate leakage current of a GaN high electron mobility transistor (GaN HEMT), a GaN metal-oxide-semiconductor high electron mobility transistor (MOSHEMT) is proposed, in which a metal-oxide-semiconductor gate with high-dielectric-constant HfO2 as an insulating dielectric is employed to replace the traditional GaN HEMT Schottky gate. A 0.5 μm gate length GaN MOSHEMT was fabricated based on the proposed structure, the {{{Al}}}0.28{{{Ga}}}0.72{{N}} barrier layer is partially etched to produce a higher transconductance without deteriorating the transport characteristics of the two-dimensional electron gas in the channel, the gate dielectric is HfO2 deposited by atomic layer deposition. Current-voltage characteristics and radio frequency characteristics are obtained after device preparation, the maximum current density of the device is 900 mA mm-1, the source-drain breakdown voltage is 75 V, gate current is significantly suppressed and the forward gate voltage swing range is about ten times higher than traditional GaN HEMTs, the GaN MOSHEMT also demonstrates radio frequency characteristics comparable to traditional GaN HEMTs with the same gate length.

  6. Substitutional and interstitial oxygen in wurtzite GaN

    NASA Astrophysics Data System (ADS)

    Wright, A. F.

    2005-11-01

    Density-functional theory was used to compute energy-minimum configurations and formation energies of substitutional and interstitial oxygen (O) in wurtzite GaN. The results indicate that O substituted at a N site (ON) acts as a single donor with the ionized state (ON+1) being the most stable O state in p-type GaN. In n-type GaN, interstitial O (OI) is predicted to be a double acceptor and O substituted at a Ga site (OGa) is predicted to be a triple acceptor. The formation energies of these two species are comparable to that of ON in n-type GaN and, as such, they should form and compensate the ON donors. The extent of compensation was estimated for both Ga-rich and N-rich conditions with a total O concentration of 1017cm-3. Ga-rich conditions yielded negligible compensation and an ON concentration in excess of 9.9×1016cm-3. N-rich conditions yielded a 25% lower ON concentration, due to the increased stability of OI and OGa relative to ON, and moderate compensation. These findings are consistent with experimental results indicating that O acts as a donor in GaN(O). Complexes of ON with the Mg acceptor and OI with the Si donor were examined. Binding energies for charge-conserving reactions were ⩾0.5eV, indicating that these complexes can exist in equilibrium at room temperature. Complexes of ON with the Ga vacancy in n-type GaN were also examined and their binding energies were 1.2 and 1.4eV, indicating that appreciable concentrations can exist in equilibrium even at elevated temperatures.

  7. Dynamic phases, pinning, and pattern formation for driven dislocation assemblies

    SciTech Connect

    Zhou, Caizhi; Reichhardt, Charles; Olson Reichhardt, Cynthia J.; Beyerlein, Irene J.

    2015-01-23

    We examine driven dislocation assemblies and show that they can exhibit a set of dynamical phases remarkably similar to those of driven systems with quenched disorder such as vortices in superconductors, magnetic domain walls, and charge density wave materials. These phases include pinned-jammed, fluctuating, and dynamically ordered states, and each produces distinct dislocation patterns as well as specific features in the noise fluctuations and transport properties. Lastly, our work suggests that many of the results established for systems with quenched disorder undergoing plastic depinning transitions can be applied to dislocation systems, providing a new approach for understanding pattern formation and dynamics in these systems.

  8. Dynamic phases, pinning, and pattern formation for driven dislocation assemblies

    DOE PAGES

    Zhou, Caizhi; Reichhardt, Charles; Olson Reichhardt, Cynthia J.; ...

    2015-01-23

    We examine driven dislocation assemblies and show that they can exhibit a set of dynamical phases remarkably similar to those of driven systems with quenched disorder such as vortices in superconductors, magnetic domain walls, and charge density wave materials. These phases include pinned-jammed, fluctuating, and dynamically ordered states, and each produces distinct dislocation patterns as well as specific features in the noise fluctuations and transport properties. Lastly, our work suggests that many of the results established for systems with quenched disorder undergoing plastic depinning transitions can be applied to dislocation systems, providing a new approach for understanding pattern formation andmore » dynamics in these systems.« less

  9. Dynamic Phases, Pinning, and Pattern Formation for Driven Dislocation Assemblies

    PubMed Central

    Zhou, Caizhi; Reichhardt, Charles; Olson Reichhardt, Cynthia J.; Beyerlein, Irene J.

    2015-01-01

    We examine driven dislocation assemblies and show that they can exhibit a set of dynamical phases remarkably similar to those of driven systems with quenched disorder such as vortices in superconductors, magnetic domain walls, and charge density wave materials. These phases include pinned-jammed, fluctuating, and dynamically ordered states, and each produces distinct dislocation patterns as well as specific features in the noise fluctuations and transport properties. Our work suggests that many of the results established for systems with quenched disorder undergoing plastic depinning transitions can be applied to dislocation systems, providing a new approach for understanding pattern formation and dynamics in these systems. PMID:25613839

  10. Tailoring Superconductivity with Quantum Dislocations.

    PubMed

    Li, Mingda; Song, Qichen; Liu, Te-Huan; Meroueh, Laureen; Mahan, Gerald D; Dresselhaus, Mildred S; Chen, Gang

    2017-08-09

    Despite the established knowledge that crystal dislocations can affect a material's superconducting properties, the exact mechanism of the electron-dislocation interaction in a dislocated superconductor has long been missing. Being a type of defect, dislocations are expected to decrease a material's superconducting transition temperature (Tc) by breaking the coherence. Yet experimentally, even in isotropic type I superconductors, dislocations can either decrease, increase, or have little influence on Tc. These experimental findings have yet to be understood. Although the anisotropic pairing in dirty superconductors has explained impurity-induced Tc reduction, no quantitative agreement has been reached in the case a dislocation given its complexity. In this study, by generalizing the one-dimensional quantized dislocation field to three dimensions, we reveal that there are indeed two distinct types of electron-dislocation interactions. Besides the usual electron-dislocation potential scattering, there is another interaction driving an effective attraction between electrons that is caused by dislons, which are quantized modes of a dislocation. The role of dislocations to superconductivity is thus clarified as the competition between the classical and quantum effects, showing excellent agreement with existing experimental data. In particular, the existence of both classical and quantum effects provides a plausible explanation for the illusive origin of dislocation-induced superconductivity in semiconducting PbS/PbTe superlattice nanostructures. A quantitative criterion has been derived, in which a dislocated superconductor with low elastic moduli and small electron effective mass and in a confined environment is inclined to enhance Tc. This provides a new pathway for engineering a material's superconducting properties by using dislocations as an additional degree of freedom.

  11. Dislocation-induced superfluidity in a model supersolid

    NASA Astrophysics Data System (ADS)

    Dasbiswas, Kinjal; Goswami, Debajit; Yoo, Chi-Deuk; Dorsey, Alan

    2010-03-01

    The effect of an edge dislocation in inducing superfluidity is explored by coupling the elastic strain field of the dislocation to the superfluid density, and solving the corresponding Ginzburg-Landau theory. It is shown that superfluid density is induced along a single dislocation below a critical temperature determined by the ground state solution of a 2D Schr"odinger equation with a dipolar potential. This superfluid behavior can be described by a 1D Ginzburg-Landau equation obtained through a weakly nonlinear analysis. We then extend our analysis to a network of dislocation lines considered before by Shevchenko and Toner, which could serve as a model for superflow through solid ^4He. The effect of fluctuations and dynamics are included through a full time dependent Ginzburg-Landau theory.

  12. Neglected isolated scaphoid dislocation

    PubMed Central

    Baek, Jong-Ryoon; Cho, Seung Hyun; Lee, Yong Seuk; Roh, Young Hak

    2016-01-01

    The authors present a case of isolated scaphoid dislocation in a 40-year-old male that was undiagnosed for 2 months. The patient was treated by open reduction, Kirschner wire fixation, interosseous ligament repair using a suture anchor and Blatt's dorsal capsulodesis. At 6 years followup, his radiographs of wrist showed a normal carpal alignment with a scapholunate gap of 3 mm and no evidence of avascular necrosis (AVN) of the scaphoid. PMID:27904228

  13. Propagation of misfit dislocations from buffer/Si interface into Si

    DOEpatents

    Liliental-Weber, Zuzanna [El Sobrante, CA; Maltez, Rogerio Luis [Porto Alegre, BR; Morkoc, Hadis [Richmond, VA; Xie, Jinqiao [Raleigh, VA

    2011-08-30

    Misfit dislocations are redirected from the buffer/Si interface and propagated to the Si substrate due to the formation of bubbles in the substrate. The buffer layer growth process is generally a thermal process that also accomplishes annealing of the Si substrate so that bubbles of the implanted ion species are formed in the Si at an appropriate distance from the buffer/Si interface so that the bubbles will not migrate to the Si surface during annealing, but are close enough to the interface so that a strain field around the bubbles will be sensed by dislocations at the buffer/Si interface and dislocations are attracted by the strain field caused by the bubbles and move into the Si substrate instead of into the buffer epi-layer. Fabrication of improved integrated devices based on GaN and Si, such as continuous wave (CW) lasers and light emitting diodes, at reduced cost is thereby enabled.

  14. Solute atmospheres at dislocations

    DOE PAGES

    Hirth, John P.; Barnett, David M.; Hoagland, Richard G.

    2017-06-01

    In this study, a two-dimensional plane strain elastic solution is determined for the Cottrell solute atmosphere around an edge dislocation in an infinitely long cylinder of finite radius (the matrix), in which rows of solutes are represented by cylindrical rods with in-plane hydrostatic misfit (axial misfit is also considered). The periphery of the matrix is traction-free, thus introducing an image solute field which generates a solute-solute interaction energy that has not been considered previously. The relevant energy for the field of any distribution of solutes coexistent with a single edge dislocation along the (matrix) cylinder axis is determined, and coherencymore » effects are discussed and studied. Monte Carlo simulations accounting for all pertinent interactions over a range of temperatures are found to yield solute distributions different from classical results, namely, (1) Fermi-Dirac condensations at low temperatures at the free surface, (2) the majority of the atmosphere lying within an unexpectedly large non-linear interaction region near the dislocation core, and (3) temperature-dependent asymmetrical solute arrangements that promote bending. The solute distributions at intermediate temperatures show a 1/r dependence in agreement with previous linearized approximations. With a standard state of solute corresponding to a mean concentration, c0, the relevant interaction energy expression presented in this work is valid when extended to large concentrations for which Henry's Law and Vegard's Law do not apply.« less

  15. Dislocation Multiplication in the Early Stage of Deformation in Mo Single Crystals

    SciTech Connect

    Hsiung, L.; Lassila, D.H.

    2000-03-02

    Initial dislocation structure in annealed high-purity Mo single crystals and deformation substructure in a crystal subjected to 1% compression have been examined and studied using transmission electron microscopy (TEM) techniques in order to investigate dislocation multiplication mechanisms in the early stage of plastic deformation. The initial dislocation density is in a range of 10{sup 6} {approx} 10{sup 7} cm{sup -2}, and the dislocation structure is found to contain many grown-in superjogs along dislocation lines. The dislocation density increases to a range of 10{sup 8} {approx} 10{sup 9} cm{sup -2}, and the average jog height is also found to increase after compressing for a total strain of 1%. It is proposed that the preexisting jogged screw dislocations can act as (multiple) dislocation multiplication sources when deformed under quasi-static conditions. The jog height can increase by stress-induced jog coalescence, which takes place via the lateral migration (drift) of superjogs driven by unbalanced line-tension partials acting on link segments of unequal lengths. The coalescence of superjogs results in an increase of both link length and jog height. Applied shear stress begins to push each link segment to precede dislocation multiplication when link length and jog height are greater than critical lengths. This ''dynamic'' dislocation multiplication source is suggested to be crucial for the dislocation multiplication in the early stage of plastic deformation in Mo.

  16. Strength and Dislocation Structure Evolution of Small Metals under Vibrations

    NASA Astrophysics Data System (ADS)

    Ngan, Alfonso

    2015-03-01

    It is well-known that ultrasonic vibration can soften metals, and this phenomenon has been widely exploited in industrial applications concerning metal forming and bonding. In this work, we explore the effects of a superimposed small oscillatory load on metal plasticity, from the nano- to macro-size range, and from audible to ultrasonic frequency ranges. Macroscopic and nano-indentation were performed on aluminum, copper and molybdenum, and the results show that the simultaneous application of oscillatory stresses can lower the hardness of these samples. More interestingly, EBSD and TEM observations show that subgrain formation and reduction in dislocation density generally occurred when stress oscillations were applied. These findings point to an important knowledge gap in metal plasticity - the existing understanding of ultrasound softening in terms of the vibrations either imposing additional stress waves to augment the quasi-static applied load, or heating up the metal, whereas the metal's intrinsic deformation resistance or dislocation interactive processes are assumed unaltered by the ultrasound, is proven wrong by the present results. Furthermore, in the case of nanoindentation, the Continuous Stiffness Measurement technique for contact stiffness measurement assumes that the imposed signal-carrier oscillations do not intrinsically alter the material properties of the specimen, and again, the present results prove that this can be wrong. To understand the enhanced subgrain formation and dislocation annihilation, Discrete Dislocation Dynamics (DDD) simulations were carried out and these show that when an oscillatory stress is superimposed on a quasi-static applied stress, reversals of motion of dislocations may occur, and these allow the dislocations to revisit repeatedly suitable configurations for annihilation. DDD, however, was unable to predict the observed subgrain formation presumably because the number of dislocations that can be handled is not large

  17. An Alternative Three-Term Decomposition for Single Crystal Deformation Motivated by Non-Linear Elastic Dislocation Solutions

    DTIC Science & Technology

    2014-04-01

    and dislocation density under simple shear and uniaxial compression demonstrate differences from those of usual crystal plasticity at large strain and...not addressed by conventional two-term crystal plasticity . 15. SUBJECT TERMS elasticity, plasticity , dislocations , metals, modeling 16. SECURITY...quantifies elastic lattice stretch and rotation, and FP accounts for plastic slip due to dislocation glide. This decomposition was perhaps first

  18. Growth regimes during homoepitaxial growth of GaN by ammonia molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Corrion, A. L.; Wu, F.; Speck, J. S.

    2012-09-01

    c-plane GaN films were grown by ammonia molecular beam epitaxy on metal-organic chemical vapor deposition templates for a wide range of NH3:Ga flux ratios and growth temperatures, and the resulting films were characterized using atomic force microscopy, reflection high-energy electron diffraction, and transmission electron microscopy. Three distinct nitrogen-rich growth regimes—unstable layer-by-layer, quasi-stable step flow, and dislocation-mediated pitting—were identified based on the growth mode and film properties. In addition, step flow growth was observed under conditions of gallium droplet accumulation. The results indicate the existence of two regimes for step-flow growth of GaN by ammonia MBE—both gallium-rich and nitrogen-rich. Growth mode instabilities and mound formation were observed and are discussed in the context of a step-edge energy barrier to adatom diffusion over a terrace.

  19. Growth regimes during homoepitaxial growth of GaN by ammonia molecular beam epitaxy

    SciTech Connect

    Corrion, A. L.; Wu, F.; Speck, J. S.

    2012-09-01

    c-plane GaN films were grown by ammonia molecular beam epitaxy on metal-organic chemical vapor deposition templates for a wide range of NH{sub 3}:Ga flux ratios and growth temperatures, and the resulting films were characterized using atomic force microscopy, reflection high-energy electron diffraction, and transmission electron microscopy. Three distinct nitrogen-rich growth regimes - unstable layer-by-layer, quasi-stable step flow, and dislocation-mediated pitting - were identified based on the growth mode and film properties. In addition, step flow growth was observed under conditions of gallium droplet accumulation. The results indicate the existence of two regimes for step-flow growth of GaN by ammonia MBE - both gallium-rich and nitrogen-rich. Growth mode instabilities and mound formation were observed and are discussed in the context of a step-edge energy barrier to adatom diffusion over a terrace.

  20. Dislocation Starvation and Exhaustion Hardening in Mo-alloy Nanofibers

    SciTech Connect

    Chisholm, Claire; Bei, Hongbin; Lowry, M. B.; Oh, Jason; Asif, S.A. Syed; Warren, O.; Shan, Zhiwei; George, Easo P; Minor, Andrew

    2012-01-01

    The evolution of defects in Mo alloy nanofibers with initial dislocation densities ranging from 0 to 1.6 1014 m2 were studied using an in situ push-to-pull device in conjunction with a nanoindenter in a transmission electron microscope. Digital image correlation was used to determine stress and strain in local areas of deformation. When they had no initial dislocations the Mo alloy nanofibers suffered sudden catastrophic elongation following elastic deformation to ultrahigh stresses. At the other extreme fibers with a high dislocation density underwent sustained homogeneous deformation after yielding at much lower stresses. Between these two extremes nanofibers with intermediate dislocation densities demonstrated a clear exhaustion hardening behavior, where the progressive exhaustion of dislocations and dislocation sources increases the stress required to drive plasticity. This is consistent with the idea that mechanical size effects ( smaller is stronger ) are due to the fact that nanostructures usually have fewer defects that can operate at lower stresses. By monitoring the evolution of stress locally we find that exhaustion hardening causes the stress in the nanofibers to surpass the critical stress predicted for self-multiplication, supporting a plasticity mechanism that has been hypothesized to account for the rapid strain softening observed in nanoscale bcc materials at high stresses.