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Sample records for doped diamond nanocrystallite

  1. Endo-Fullerenes and Doped Diamond Nanocrystallite Based Solid-State Qubits

    NASA Technical Reports Server (NTRS)

    Park, Seongjun; Srivastava, Deepak; Cho, K.

    2001-01-01

    This viewgraph presentation provides information on the use of endo-fullerenes and doped diamond nanocrystallites in the development of a solid state quantum computer. Arrays of qubits, which have 1/2 nuclear spin, are more easily fabricated than arrays of similar bare atoms. H-1 can be encapsulated in a C20D20 fullerene, while P-31 can be encapsulated in a diamond nanocrystallite.

  2. Endo-Fullerene and Doped Diamond Nanocrystallite Based Models of Qubits for Solid-State Quantum Computers

    NASA Technical Reports Server (NTRS)

    Park, Seongjun; Srivastava, Deepak; Cho, Kyeongjae; Biegel, Bryan (Technical Monitor)

    2001-01-01

    Models of encapsulated 1/2 nuclear spin H-1 and P-31 atoms in fullerene and diamond nanocrystallite, respectively, are proposed and examined with ab-initio local density functional method for possible applications as single quantum bits (qubits) in solid-state quantum computers. A H-1 atom encapsulated in a fully deuterated fullerene, C(sub 20)D(sub 20), forms the first model system and ab-initio calculation shows that H-1 atom is stable in atomic state at the center of the fullerene with a barrier of about 1 eV to escape. A P-31 atom positioned at the center of a diamond nanocrystallite is the second model system, and 3 1P atom is found to be stable at the substitutional site relative to interstitial sites by 15 eV, Vacancy formation energy is 6 eV in diamond so that substitutional P-31 atom will be stable against diffusion during the formation mechanisms within the nanocrystallite. The coupling between the nuclear spin and weakly bound (valance) donor electron coupling in both systems is found to be suitable for single qubit applications, where as the spatial distributions of (valance) donor electron wave functions are found to be preferentially spread along certain lattice directions facilitating two or more qubit applications. The feasibility of the fabrication pathways for both model solid-state qubit systems within practical quantum computers is discussed with in the context of our proposed solid-state qubits.

  3. Ultratough single crystal boron-doped diamond

    DOEpatents

    Hemley, Russell J [Carnegie Inst. for Science, Washington, DC ; Mao, Ho-Kwang [Carnegie Inst. for Science, Washington, DC ; Yan, Chih-Shiue [Carnegie Inst. for Science, Washington, DC ; Liang, Qi [Carnegie Inst. for Science, Washington, DC

    2015-05-05

    The invention relates to a single crystal boron doped CVD diamond that has a toughness of at least about 22 MPa m.sup.1/2. The invention further relates to a method of manufacturing single crystal boron doped CVD diamond. The growth rate of the diamond can be from about 20-100 .mu.m/h.

  4. Low-stress doped ultrananocrystalline diamond

    DOEpatents

    Sumant, Anirudha V.; Buja, Federico; van Spengen, Willem Merlijn

    2016-10-25

    Nanocrystalline diamond coatings exhibit stress in nano/micro-electro mechanical systems (MEMS). Doped nanocrstalline diamond coatings exhibit increased stress. A carbide forming metal coating reduces the in-plane stress. In addition, without any metal coating, simply growing UNCD or NCD with thickness in the range of 3-4 micron also reduces in-plane stress significantly. Such coatings can be used in MEMS applications.

  5. Piezoresistive boron doped diamond nanowire

    DOEpatents

    Sumant, Anirudha V.; Wang, Xinpeng

    2016-09-13

    A UNCD nanowire comprises a first end electrically coupled to a first contact pad which is disposed on a substrate. A second end is electrically coupled to a second contact pad also disposed on the substrate. The UNCD nanowire is doped with a dopant and disposed over the substrate. The UNCD nanowire is movable between a first configuration in which no force is exerted on the UNCD nanowire and a second configuration in which the UNCD nanowire bends about the first end and the second end in response to a force. The UNCD nanowire has a first resistance in the first configuration and a second resistance in the second configuration which is different from the first resistance. The UNCD nanowire is structured to have a gauge factor of at least about 70, for example, in the range of about 70 to about 1,800.

  6. Toward deep blue nano hope diamonds: heavily boron-doped diamond nanoparticles.

    PubMed

    Heyer, Steffen; Janssen, Wiebke; Turner, Stuart; Lu, Ying-Gang; Yeap, Weng Siang; Verbeeck, Jo; Haenen, Ken; Krueger, Anke

    2014-06-24

    The production of boron-doped diamond nanoparticles enables the application of this material for a broad range of fields, such as electrochemistry, thermal management, and fundamental superconductivity research. Here we present the production of highly boron-doped diamond nanoparticles using boron-doped CVD diamond films as a starting material. In a multistep milling process followed by purification and surface oxidation we obtained diamond nanoparticles of 10-60 nm with a boron content of approximately 2.3 × 10(21) cm(-3). Aberration-corrected HRTEM reveals the presence of defects within individual diamond grains, as well as a very thin nondiamond carbon layer at the particle surface. The boron K-edge electron energy-loss near-edge fine structure demonstrates that the B atoms are tetrahedrally embedded into the diamond lattice. The boron-doped diamond nanoparticles have been used to nucleate growth of a boron-doped diamond film by CVD that does not contain an insulating seeding layer.

  7. Boron-doped superlattices and Bragg mirrors in diamond

    SciTech Connect

    Fiori, A.; Bousquet, J.; Eon, D.; Omnès, F.; Bustarret, E.; Bellet-Amalric, E.

    2014-08-25

    A periodic modulation of the boron doping level of single crystal diamond multilayers over more than three orders of magnitude during epitaxial growth by microwave plasma-enhanced chemical vapor deposition is shown to yield Bragg mirrors in the visible. The thicknesses and doping level of the individual layers were controlled by in situ spectroscopic ellipsometry, enabling to tune the reflectance peak to the wavelength range of diamond color centers, such as NV{sup 0} or NV{sup −}. The crystalline quality, periodicity, and sharpness of the doping transitions in these doping superlattices over tens of periods were confirmed by high resolution X-ray diffraction.

  8. The investigation of boron-doped diamond absorbance spectrum

    NASA Astrophysics Data System (ADS)

    Aksenova, A. S.; Altuhov, A. A.; Ryabeva, E. V.; Samosadnyi, V. T.; Feshchenko, V. S.; Chernyaev, A. P.; Shepelev, V. A.

    2017-01-01

    The trend of using of radiation with shorter wave length in leading high technological processes demands the detected search of materials for the solid-state electronics equipment and optical systems of an ultra violet and vacuum ultra violet spectral range. Diamond photodetectors of ultra violet radiation have the advantage of their opponents due to their unique properties, such as high sensitivity at the range of 190–250 nm and low sensitivity to the solar irradiation. The modification of semiconductive diamond material properties by the doping to get photodetectors with the different width of photosensitivity range is of a great interest. Due to this fact the spectroscopic investigation of artificial diamonds doped with boron took place for the definition of their applicability to produce the wide-spectral photosensitive equipment. The samples of thin diamond films were cut out in a crystallography plane (001). Sample transmission spectra were measured by vacuum infrared Fourier transform spectrometer at the range of 400–7000 cm-1. As a result it was explored that diamond based detectors doped with boron could be applied for the detection of infrared irradiation at the average infrared spectral range, however it is necessary to optimize the doping level of diamond materials to reach the compromise between the sensitivity and the speed capability of produced diamond photodetectors.

  9. Bosonic Anomalies in Boron-Doped Polycrystalline Diamond

    NASA Astrophysics Data System (ADS)

    Zhang, Gufei; Samuely, Tomas; Kačmarčík, Jozef; Ekimov, Evgeny A.; Li, Jun; Vanacken, Johan; Szabó, Pavol; Huang, Junwei; Pereira, Paulo J.; Cerbu, Dorin; Moshchalkov, Victor V.

    2016-12-01

    Quantum confinement and coherence effects are considered the cause of many specific features for systems which are generally low dimensional, strongly disordered, and/or situated in the vicinity of the metal-insulator transition. Here, we report on the observation of anomalous resistance peak and specific heat peaks superimposed at the superconducting transition of heavily boron-doped polycrystalline bulk diamond, which is a three-dimensional system situated deep on the metallic side of the boron-doping-driven metal-insulator transition in diamond. The anomalous resistance peak and specific heat peaks are interpreted as a result of confinement and coherence effects in the presence of intrinsic and extrinsic granularity. Our data, obtained for superconducting diamond, provide a reference for understanding the superconductivity in other granular disordered systems. Furthermore, our study brings attention to the significant influence of granular disorder on the physical properties of boron-doped diamond, which is considered a promising candidate for electronics applications.

  10. Thermal diffusion boron doping of single-crystal natural diamond

    NASA Astrophysics Data System (ADS)

    Seo, Jung-Hun; Wu, Henry; Mikael, Solomon; Mi, Hongyi; Blanchard, James P.; Venkataramanan, Giri; Zhou, Weidong; Gong, Shaoqin; Morgan, Dane; Ma, Zhenqiang

    2016-05-01

    With the best overall electronic and thermal properties, single crystal diamond (SCD) is the extreme wide bandgap material that is expected to revolutionize power electronics and radio-frequency electronics in the future. However, turning SCD into useful semiconductors requires overcoming doping challenges, as conventional substitutional doping techniques, such as thermal diffusion and ion implantation, are not easily applicable to SCD. Here we report a simple and easily accessible doping strategy demonstrating that electrically activated, substitutional doping in SCD without inducing graphitization transition or lattice damage can be readily realized with thermal diffusion at relatively low temperatures by using heavily doped Si nanomembranes as a unique dopant carrying medium. Atomistic simulations elucidate a vacancy exchange boron doping mechanism that occurs at the bonded interface between Si and diamond. We further demonstrate selectively doped high voltage diodes and half-wave rectifier circuits using such doped SCD. Our new doping strategy has established a reachable path toward using SCDs for future high voltage power conversion systems and for other novel diamond based electronic devices. The novel doping mechanism may find its critical use in other wide bandgap semiconductors.

  11. Homoepitaxial Boron Doped Diamond Anvils as Heating Elements in a Diamond Anvil Cell

    NASA Astrophysics Data System (ADS)

    Montgomery, Jeffrey; Samudrala, Gopi; Smith, Spencer; Tsoi, Georgiy; Vohra, Yogesh; Weir, Samuel

    2013-03-01

    Recent advances in designer-diamond technology have allowed for the use of electrically and thermally conducting homoepitaxially-grown layers of boron-doped diamond (grown at 1200 °C with a 2% mixture of CH4 in H, resulting in extremely high doping levels ~ 1020/cm3) to be used as heating elements in a diamond anvil cell (DAC). These diamonds allow for precise control of the temperature inside of the diamond anvil itself, particularly when coupled with a cryostat. Furthermore, the unmatched thermally conducting nature of diamond ensures that no significant lateral gradient in temperature occurs across the culet area. Since a thermocouple can easily be attached anywhere on the diamond surface, we can also measure diamond temperatures directly. With two such heaters, one can raise sample temperatures uniformly, or with any desired gradient along the pressure axis while preserving optical access. In our continuing set of benchmark experiments, we use two newly created matching heater anvils with 500 μm culets to analyze the various fluorescence emission lines of ruby microspheres, which show more complicated behavior than traditional ruby chips. We also report on the temperature dependence of the high-pressure Raman modes of paracetamol (C8H9NO2) up to 20 GPa.

  12. Optical and electrical properties of copper-doped nano-crystallite CdO thin films

    NASA Astrophysics Data System (ADS)

    Dakhel, A. A.

    2014-05-01

    Thin films of Cu-doped CdO (CdO:Cu) with different Cu% content were prepared in high vacuum on glass and Si substrates. The samples were characterised X-ray diffraction (XRD), optical spectroscopy, scanning electron microscope (SEM), and dc-electrical measurements. The XRD study reveals the formation of single crystalline phase CdO:Cu of CdO structure with a preferential [111] orientation. However, with increasing of Cu% content, the crystal structure was gradually deteriorated. SEM study shows formation of granular structure with rice shape grains of average size ˜500 nm. The optical study shows that Cu doping increased the films transparency with a slight blueshift for the bandgap. The calculated optical constants for pure and Cu-doped CdO were analysed with Forouhi-Bloomer (FB), Wemple-Didomenico (WD), and Spitzer-Fan (SF) models. Good agreements were obtained between electrical and optical (through SF model) measurements. The electrical measurements show that the utmost enhancement in mobility (82.5 cm2/V s) and conductivity (1428.6 S/cm) was found with 2.3% Cu sample. The optoelectronic study was analysed through the available BGW and BGN models that show close theoretical to the experimental results. In general, the films of CdO prepared with light Cu doping have optical and electrical characteristics suitable for various applications in material sciences and optoelectronic devices.

  13. Facile synthesis and improved optical activity in ZnO nanocrystallites doped with coinage metals

    NASA Astrophysics Data System (ADS)

    Sahu, Dojalisa; Panda, N. R.; Acharya, B. S.

    2015-06-01

    We report the growth of well-oriented rod and flower-like nanostructures of ZnO doped with copper, gold and silver synthesized by sonochemical method. The nanostructures were grown in a nutrient solution made of zinc nitrate (Zn(NO3)2 . 6H2O) and ammonia at low temperature with varying the dopant. XRD, TEM, UV-VIS, photoluminescence and FTIR spectra were recorded to study the crystallinity, microstructure and optical properties of the samples. XRD results show the formation of hexagonal wurtzite phase of ZnO with changing lattice parameters with doping. Both direct and indirect evidences were obtained from the XRD pattern confirming the incorporation of the dopant. Enhanced UV absorbance and PL emissions for ZnO has been observed and the role of Cu, Ag and Au in altering these properties has been investigated. Shift in UV band and evolution of new visible emission bands in the Pl spectra have been explained on the basis of incorporation of impurity occupying different states in the band gap of ZnO.

  14. Semiconducting polymers with nanocrystallites interconnected via boron-doped carbon nanotubes.

    PubMed

    Yu, Kilho; Lee, Ju Min; Kim, Junghwan; Kim, Geunjin; Kang, Hongkyu; Park, Byoungwook; Ho Kahng, Yung; Kwon, Sooncheol; Lee, Sangchul; Lee, Byoung Hun; Kim, Jehan; Park, Hyung Il; Kim, Sang Ouk; Lee, Kwanghee

    2014-12-10

    Organic semiconductors are key building blocks for future electronic devices that require unprecedented properties of low-weight, flexibility, and portability. However, the low charge-carrier mobility and undesirable processing conditions limit their compatibility with low-cost, flexible, and printable electronics. Here, we present significantly enhanced field-effect mobility (μ(FET)) in semiconducting polymers mixed with boron-doped carbon nanotubes (B-CNTs). In contrast to undoped CNTs, which tend to form undesired aggregates, the B-CNTs exhibit an excellent dispersion in conjugated polymer matrices and improve the charge transport between polymer chains. Consequently, the B-CNT-mixed semiconducting polymers enable the fabrication of high-performance FETs on plastic substrates via a solution process; the μFET of the resulting FETs reaches 7.2 cm(2) V(-1) s(-1), which is the highest value reported for a flexible FET based on a semiconducting polymer. Our approach is applicable to various semiconducting polymers without any additional undesirable processing treatments, indicating its versatility, universality, and potential for high-performance printable electronics.

  15. Global and local superconductivity in boron-doped granular diamond.

    PubMed

    Zhang, Gufei; Turner, Stuart; Ekimov, Evgeny A; Vanacken, Johan; Timmermans, Matias; Samuely, Tomás; Sidorov, Vladimir A; Stishov, Sergei M; Lu, Yinggang; Deloof, Bart; Goderis, Bart; Van Tendeloo, Gustaaf; Van de Vondel, Joris; Moshchalkov, Victor V

    2014-04-02

    Strong granularity-correlated and intragrain modulations of the superconducting order parameter are demonstrated in heavily boron-doped diamond situated not yet in the vicinity of the metal-insulator transition. These modulations at the superconducting state (SC) and at the global normal state (NS) above the resistive superconducting transition, reveal that local Cooper pairing sets in prior to the global phase coherence.

  16. Color Centers in Silic On-Doped Diamond Films

    NASA Astrophysics Data System (ADS)

    Sedov, V. S.; Krivobok, V. S.; Khomich, A. V.; Ralchenko, V. G.; Khomich, A. A.; Martyanov, A. K.; Nikolaev, S. N.; Poklonskaya, O. N.; Konov, V. I.

    2016-05-01

    Silicon-doped microcrystalline diamond films of 1 μm thickness were grown by chemical vapor deposition in microwave plasma from mixtures of methane-hydrogen-silane on substrates of aluminum nitride, tungsten, and silicon. The diamond films were found to contain optically active silicon vacancy (SiV) centers giving rise to the 737-nm band in the photoluminescence spectra. The spectral features of a newly discovered narrow band of comparable intensity at 720-722 nm were studied. It is shown that the band at 720-722 nm occurs in the photoluminescence spectra only in the presence of silica in the diamond, regardless of the substrate material. The temperature dynamics of the photoluminescence spectra in the range of 5-294 K were investigated. The possible nature and mechanisms of formation of the color centers responsible for the 720-722 nm band are discussed.

  17. Elastic and mechanical softening in boron-doped diamond.

    PubMed

    Liu, Xiaobing; Chang, Yun-Yuan; Tkachev, Sergey N; Bina, Craig R; Jacobsen, Steven D

    2017-02-24

    Alternative approaches to evaluating the hardness and elastic properties of materials exhibiting physical properties comparable to pure diamond have recently become necessary. The classic linear relationship between shear modulus (G) and Vickers hardness (HV), along with more recent non-linear formulations based on Pugh's modulus extending into the superhard region (HV > 40 GPa) have guided synthesis and identification of novel superabrasives. These schemes rely on accurately quantifying HV of diamond-like materials approaching or potentially exceeding the hardness of the diamond indenter, leading to debate about methodology and the very definition of hardness. Elasticity measurements on such materials are equally challenging. Here we used a high-precision, GHz-ultrasonic interferometer in conjunction with a newly developed optical contact micrometer and 3D optical microscopy of indentations to evaluate elasticity-hardness relations in the ultrahard range (HV > 80 GPa) by examining single-crystal boron-doped diamond (BDD) with boron contents ranging from 50-3000 ppm. We observe a drastic elastic-mechanical softening in highly doped BDD relative to the trends observed for superhard materials, providing insight into elasticity-hardness relations for ultrahard materials.

  18. Elastic and mechanical softening in boron-doped diamond

    PubMed Central

    Liu, Xiaobing; Chang, Yun-Yuan; Tkachev, Sergey N.; Bina, Craig R.; Jacobsen, Steven D.

    2017-01-01

    Alternative approaches to evaluating the hardness and elastic properties of materials exhibiting physical properties comparable to pure diamond have recently become necessary. The classic linear relationship between shear modulus (G) and Vickers hardness (HV), along with more recent non-linear formulations based on Pugh’s modulus extending into the superhard region (HV > 40 GPa) have guided synthesis and identification of novel superabrasives. These schemes rely on accurately quantifying HV of diamond-like materials approaching or potentially exceeding the hardness of the diamond indenter, leading to debate about methodology and the very definition of hardness. Elasticity measurements on such materials are equally challenging. Here we used a high-precision, GHz-ultrasonic interferometer in conjunction with a newly developed optical contact micrometer and 3D optical microscopy of indentations to evaluate elasticity-hardness relations in the ultrahard range (HV > 80 GPa) by examining single-crystal boron-doped diamond (BDD) with boron contents ranging from 50–3000 ppm. We observe a drastic elastic-mechanical softening in highly doped BDD relative to the trends observed for superhard materials, providing insight into elasticity-hardness relations for ultrahard materials. PMID:28233808

  19. Elastic and mechanical softening in boron-doped diamond

    NASA Astrophysics Data System (ADS)

    Liu, Xiaobing; Chang, Yun-Yuan; Tkachev, Sergey N.; Bina, Craig R.; Jacobsen, Steven D.

    2017-02-01

    Alternative approaches to evaluating the hardness and elastic properties of materials exhibiting physical properties comparable to pure diamond have recently become necessary. The classic linear relationship between shear modulus (G) and Vickers hardness (HV), along with more recent non-linear formulations based on Pugh’s modulus extending into the superhard region (HV > 40 GPa) have guided synthesis and identification of novel superabrasives. These schemes rely on accurately quantifying HV of diamond-like materials approaching or potentially exceeding the hardness of the diamond indenter, leading to debate about methodology and the very definition of hardness. Elasticity measurements on such materials are equally challenging. Here we used a high-precision, GHz-ultrasonic interferometer in conjunction with a newly developed optical contact micrometer and 3D optical microscopy of indentations to evaluate elasticity-hardness relations in the ultrahard range (HV > 80 GPa) by examining single-crystal boron-doped diamond (BDD) with boron contents ranging from 50–3000 ppm. We observe a drastic elastic-mechanical softening in highly doped BDD relative to the trends observed for superhard materials, providing insight into elasticity-hardness relations for ultrahard materials.

  20. Vacancy defects and defect clusters in alkali metal ion-doped MgO nanocrystallites studied by positron annihilation and photoluminescence spectroscopy

    NASA Astrophysics Data System (ADS)

    Sellaiyan, S.; Uedono, A.; Sivaji, K.; Janet Priscilla, S.; Sivasankari, J.; Selvalakshmi, T.

    2016-10-01

    Pure and alkali metal ion (Li, Na, and K)-doped MgO nanocrystallites synthesized by solution combustion technique have been studied by positron lifetime and Doppler broadening spectroscopy methods. Positron lifetime analysis exhibits four characteristic lifetime components for all the samples. Doping reduces the Mg vacancy after annealing to 800 °C. It was observed that Li ion migrates to the vacancy site to recover Mg vacancy-type defects, reducing cluster vacancies and micropores. For Na- and K-doped MgO, the aforementioned defects are reduced and immobile at 800 °C. Coincidence Doppler broadening studies show the positron trapping sites as vacancy clusters. The decrease in the S parameter is due to the particle growth and reduction in the defect concentration at 800 °C. Photoluminescence study shows an emission peak at 445 nm and 498 nm, associated with F2 2+ and recombination of higher-order vacancy complexes. Further, annealing process is likely to dissociate F2 2+ to F+ and this F+ is converted into F centers at 416 nm.

  1. In/extrinsic granularity in superconducting boron-doped diamond

    NASA Astrophysics Data System (ADS)

    Willems, B. L.; Zhang, G.; Vanacken, J.; Moshchalkov, V. V.; Guillamon, I.; Suderow, H.; Vieira, S.; Janssens, S. D.; Haenen, K.; Wagner, P.

    2010-10-01

    When charge carriers are introduced in diamond, e.g. by chemical doping with Boron (B), the C1-x∼1021 cm), diamond becomes superconducting. Using microwave plasma-assisted chemical vapor deposition (MPCVD) we have prepared diamond:B thin films with critical offset temperatures T below 3 K. We have investigated the transport properties of these diamond:B thin films, which show pronounced granular effects. It turns out, that this granularity is both intrinsic as well as extrinsic. The extrinsic granularity is the effect of the growth method which needs to start from a seeding of the substrate with detonation nanodiamond, which acts as nucleation centers for further MPCVD growth of the film. In using SPM/STM techniques, we also observed intrinsic granularity, meaning that within physical grains, we observe also a strong intragrain modulation of the order parameter. As a consequence of these granularities, the transport properties show evidence of (i) strong superconducting fluctuations and (ii) Cooper pair tunneling and/or quasiparticle tunneling. The latter effects explain the observed negative magnetoresistance.

  2. Boron doped diamond biotechnology: from sensors to neurointerfaces.

    PubMed

    Hébert, C; Scorsone, E; Bendali, A; Kiran, R; Cottance, M; Girard, H A; Degardin, J; Dubus, E; Lissorgues, G; Rousseau, L; Mailley, P; Picaud, S; Bergonzo, P

    2014-01-01

    Boron doped nanocrystalline diamond is known as a remarkable material for the fabrication of sensors, taking advantage of its biocompatibility, electrochemical properties, and stability. Sensors can be fabricated to directly probe physiological species from biofluids (e.g. blood or urine), as will be presented. In collaboration with electrophysiologists and biologists, the technology was adapted to enable structured diamond devices such as microelectrode arrays (MEAs), i.e. common electrophysiology tools, to probe neuronal activity distributed over large populations of neurons or embryonic organs. Specific MEAs can also be used to build neural prostheses or implants to compensate function losses due to lesions or degeneration of parts of the central nervous system, such as retinal implants, which exhibit real promise as biocompatible neuroprostheses for in vivo neuronal stimulations. New electrode geometries enable high performance electrodes to surpass more conventional materials for such applications.

  3. Temperature admittance spectroscopy of boron doped chemical vapor deposition diamond

    SciTech Connect

    Zubkov, V. I. Kucherova, O. V.; Zubkova, A. V.; Ilyin, V. A.; Afanas'ev, A. V.; Bogdanov, S. A.; Vikharev, A. L.; Butler, J. E.

    2015-10-14

    Precision admittance spectroscopy measurements over wide temperature and frequency ranges were carried out for chemical vapor deposition epitaxial diamond samples doped with various concentrations of boron. It was found that the experimentally detected boron activation energy in the samples decreased from 314 meV down to 101 meV with an increase of B/C ratio from 600 to 18000 ppm in the gas reactants. For the heavily doped samples, a transition from thermally activated valence band conduction to hopping within the impurity band (with apparent activation energy 20 meV) was detected at temperatures 120–150 K. Numerical simulation was used to estimate the impurity DOS broadening. Accurate determination of continuously altering activation energy, which takes place during the transformation of conduction mechanisms, was proposed by numerical differentiation of the Arrhenius plot. With increase of boron doping level the gradual decreasing of capture cross section from 3 × 10{sup −13} down to 2 × 10{sup −17} cm{sup 2} was noticed. Moreover, for the hopping conduction the capture cross section becomes 4 orders of magnitude less (∼2 × 10{sup −20} cm{sup 2}). At T > T{sub room} in doped samples the birth of the second conductance peak was observed. We attribute it to a defect, related to the boron doping of the material.

  4. Boron doped diamond microelectrodes arrays for electrochemical detection in HPLC.

    PubMed

    Mahé, Eric; Devilliers, Didier; Dardoize, François

    2015-01-01

    Boron doped diamond microelectrodes arrays (MEA) have been prepared in order to be used as new amperometric sensors in electrochemical cells for HPLC detectors. The following parameters were studied: number and diameter (15-40 µm) of the electrodes, distance between them (50-240 µm), and effect of the flow rate (0.1-3 mL/min). It was thus possible to find the optimum value of the parameters which give a good signal/noise ratio in the chronoamperometric responses, with a size of the electrochemical sensors as small as possible.

  5. Conductivity of boron-doped polycrystalline diamond films: influence of specific boron defects

    NASA Astrophysics Data System (ADS)

    Ashcheulov, P.; Šebera, J.; Kovalenko, A.; Petrák, V.; Fendrych, F.; Nesládek, M.; Taylor, A.; Vlčková Živcová, Z.; Frank, O.; Kavan, L.; Dračínský, M.; Hubík, P.; Vacík, J.; Kraus, I.; Kratochvílová, I.

    2013-10-01

    The resistivity of boron doped polycrystalline diamond films changes with boron content in a very complex way with many unclear factors. From the large number of parameters affecting boron doped polycrystalline diamond film's conductivity we focused on the role of boron atoms inside diamond grains in terms of boron contribution to the continuum of diamond electronic states. Using a combination of theoretical and experimental techniques (plane-wave Density Functional Theory, Neutron Depth Profiling, resistivity and Hall effect measurements, Atomic Force Microscopy and Raman spectroscopy) we studied a wide range of B defect parameters - the boron concentration, location, structure, free hole concentration and mobility. The main goal and novelty of our work was to find the influence of B defects (structure, interactions, charge localisation and spins) in highly B-doped diamonds - close or above the metal-insulator transition - on the complex material charge transport mechanisms.

  6. Thick homoepitaxial (110)-oriented phosphorus-doped n-type diamond

    NASA Astrophysics Data System (ADS)

    Balasubramaniam, Y.; Pobedinskas, P.; Janssens, S. D.; Sakr, G.; Jomard, F.; Turner, S.; Lu, Y.-G.; Dexters, W.; Soltani, A.; Verbeeck, J.; Barjon, J.; Nesládek, M.; Haenen, K.

    2016-08-01

    The fabrication of n-type diamond is essential for the realization of electronic components for extreme environments. We report on the growth of a 66 μm thick homoepitaxial phosphorus-doped diamond on a (110)-oriented diamond substrate, grown at a very high deposition rate of 33 μm h-1. A pristine diamond lattice is observed by high resolution transmission electron microscopy, which indicates the growth of high quality diamond. About 2.9 × 1016 cm-3 phosphorus atoms are electrically active as substitutional donors, which is 60% of all incorporated dopant atoms. These results indicate that P-doped (110)-oriented diamond films deposited at high growth rates are promising candidates for future use in high-power electronic applications.

  7. Fabrication and characterization of boron-doped nanocrystalline diamond-coated MEMS probes

    NASA Astrophysics Data System (ADS)

    Bogdanowicz, Robert; Sobaszek, Michał; Ficek, Mateusz; Kopiec, Daniel; Moczała, Magdalena; Orłowska, Karolina; Sawczak, Mirosław; Gotszalk, Teodor

    2016-04-01

    Fabrication processes of thin boron-doped nanocrystalline diamond (B-NCD) films on silicon-based micro- and nano-electromechanical structures have been investigated. B-NCD films were deposited using microwave plasma assisted chemical vapour deposition method. The variation in B-NCD morphology, structure and optical parameters was particularly investigated. The use of truncated cone-shaped substrate holder enabled to grow thin fully encapsulated nanocrystalline diamond film with a thickness of approx. 60 nm and RMS roughness of 17 nm. Raman spectra present the typical boron-doped nanocrystalline diamond line recorded at 1148 cm-1. Moreover, the change in mechanical parameters of silicon cantilevers over-coated with boron-doped diamond films was investigated with laser vibrometer. The increase of resonance to frequency of over-coated cantilever is attributed to the change in spring constant caused by B-NCD coating. Topography and electrical parameters of boron-doped diamond films were investigated by tapping mode AFM and electrical mode of AFM-Kelvin probe force microscopy (KPFM). The crystallite-grain size was recorded at 153 and 238 nm for boron-doped film and undoped, respectively. Based on the contact potential difference data from the KPFM measurements, the work function of diamond layers was estimated. For the undoped diamond films, average CPD of 650 mV and for boron-doped layer 155 mV were achieved. Based on CPD values, the values of work functions were calculated as 4.65 and 5.15 eV for doped and undoped diamond film, respectively. Boron doping increases the carrier density and the conductivity of the material and, consequently, the Fermi level.

  8. Combined effect of nitrogen doping and nanosteps on microcrystalline diamond films for improvement of field emission

    NASA Astrophysics Data System (ADS)

    Mengui, U. A.; Campos, R. A.; Alves, K. A.; Antunes, E. F.; Hamanaka, M. H. M. O.; Corat, E. J.; Baldan, M. R.

    2015-04-01

    Nitrogen-doped microcrystalline diamond (N-MCD) films were grown on Si substrates using a hot filament reactor with methanol solution of urea as N source. Electrostatic self-assembly seeding of nanocrystalline diamond were used to obtain continuous and uniform films. Simultaneous changes in grains morphology and work function of diamond by nitrogen doping decreased the threshold field and the angular coefficient of Fowler-Nordhein plots. The field emission properties of our N-MCD films are comparable to carbon nanotube films.

  9. HPHT synthesis of N-H co-doped diamond single crystals

    NASA Astrophysics Data System (ADS)

    Fang, Chao; Jia, Xiaopeng; Chen, Ning; Li, Yadong; Guo, Longsuo; Chen, Liangchao; Ma, Hong-an; Liu, Xiaobing

    2016-02-01

    In this paper, a series of nitrogen and hydrogen elements (N-H) co-doped diamond single crystals were synthesized in the NiMnCo-C system with melamine (C3N6H6) additive by temperature gradient growth (TGG) method under high-pressure and high-temperature (HPHT). High nitrogen and hydrogen growth environment obviously reduces the growth rate of the diamond. The synthetic diamond crystals are octahedral shape with a green or dark green color. This results indicate that the morphology of the synthetic N-H co-doped gem-diamond can be well-controlled by TGG method. Fourier transform infrared spectroscopy (FTIR) indicate that high-quality diamond single crystals with nitrogen concentrations up to 2100 ppm have been successfully synthesized and the hydrogen related peaks at 2850 cm-1 (sp3-CH3) and 2920 cm-1 (sp3-CH2-) are found in these synthetic diamond. Meanwhile, with the increasing of C-centers the nitrogen atoms aggregate and form into A-centers in these synthetic diamonds. This is the highest quality of N-H co-doped gem-diamond single crystal synthesized in high nitrogen and high hydrogen growth environment reported so far.

  10. Anodic oxidation with doped diamond electrodes: a new advanced oxidation process.

    PubMed

    Kraft, Alexander; Stadelmann, Manuela; Blaschke, Manfred

    2003-10-31

    Boron-doped diamond anodes allow to directly produce OH* radicals from water electrolysis with very high current efficiencies. This has been explained by the very high overvoltage for oxygen production and many other anodic electrode processes on diamond anodes. Additionally, the boron-doped diamond electrodes exhibit a high mechanical and chemical stability. Anodic oxidation with diamond anodes is a new advanced oxidation process (AOP) with many advantages compared to other known chemical and photochemical AOPs. The present work reports on the use of diamond anodes for the chemical oxygen demand (COD) removal from several industrial wastewaters and from two synthetic wastewaters with malic acid and ethylenediaminetetraacetic (EDTA) acid. Current efficiencies for the COD removal between 85 and 100% have been found. The formation and subsequent removal of by-products of the COD oxidation has been investigated for the first time. Economical considerations of this new AOP are included.

  11. Characteristics of deposited boron doping diamond on tungsten carbide insert by MPECVD

    NASA Astrophysics Data System (ADS)

    Kim, Jong Seok; Park, Yeong Min; Kim, Jeong Wan; Tulugan, Kelimu; Kim, Tae Gyu

    2015-03-01

    Diamond-coated cutting tools are used primarily for machining non-ferrous materials such as aluminum-silicon alloys, copper alloys, fiber-reinforced polymers, green ceramics and graphite. Because the tool life of cemented carbide cutting tool is greatly improved by diamond coating, and typically more than 10 times of the tool life is obtained. However, research of boron-doped diamond (BDD) coating tool has not been fully researched yet. In this study, we have succeeded to make boron-doped microcrystalline and nanocrystalline diamond-coated Co-cemented tungsten carbide (WC-Co) inserts. Microcrystalline BDD thin film is deposited on WC-Co insert by using microwave plasma enhanced chemical vapor deposition (MPECVD) method. Scanning electron microscope (SEM) and Raman spectroscopy are used to characterize the as-deposited diamond films.1,2

  12. Boron-doped nanocrystalline diamond microelectrode arrays monitor cardiac action potentials.

    PubMed

    Maybeck, Vanessa; Edgington, Robert; Bongrain, Alexandre; Welch, Joseph O; Scorsone, Emanuel; Bergonzo, Philippe; Jackman, Richard B; Offenhäusser, Andreas

    2014-02-01

    The expansion of diamond-based electronics in the area of biological interfacing has not been as thoroughly explored as applications in electrochemical sensing. However, the biocompatibility of diamond, large safe electrochemical window, stability, and tunable electronic properties provide opportunities to develop new devices for interfacing with electrogenic cells. Here, the fabrication of microelectrode arrays (MEAs) with boron-doped nanocrystalline diamond (BNCD) electrodes and their interfacing with cardiomyocyte-like HL-1 cells to detect cardiac action potentials are presented. A nonreductive means of structuring doped and undoped diamond on the same substrate is shown. The resulting BNCD electrodes show high stability under mechanical stress generated by the cells. It is shown that by fabricating the entire surface of the MEA with NCD, in patterns of conductive doped, and isolating undoped regions, signal detection may be improved up to four-fold over BNCD electrodes passivated with traditional isolators.

  13. Doping Level of Boron-Doped Diamond Electrodes Controls the Grafting Density of Functional Groups for DNA Assays.

    PubMed

    Švorc, Ĺubomír; Jambrec, Daliborka; Vojs, Marian; Barwe, Stefan; Clausmeyer, Jan; Michniak, Pavol; Marton, Marián; Schuhmann, Wolfgang

    2015-09-02

    The impact of different doping levels of boron-doped diamond on the surface functionalization was investigated by means of electrochemical reduction of aryldiazonium salts. The grafting efficiency of 4-nitrophenyl groups increased with the boron levels (B/C ratio from 0 to 20,000 ppm). Controlled grafting of nitrophenyldiazonium was used to adjust the amount of immobilized single-stranded DNA strands at the surface and further on the hybridization yield in dependence on the boron doping level. The grafted nitro functions were electrochemically reduced to the amine moieties. Subsequent functionalization with a succinic acid introduced carboxyl groups for subsequent binding of an amino-terminated DNA probe. DNA hybridization significantly depends on the probe density which is in turn dependent on the boron doping level. The proposed approach opens new insights for the design and control of doped diamond surface functionalization for the construction of DNA hybridization assays.

  14. Effect of the doping level on the biological stability of hydrogenated boron doped diamond electrodes.

    PubMed

    Trouillon, Raphaël; O'Hare, Danny; Einaga, Yasuaki

    2011-03-28

    Fouling of electrode surfaces by electrode reaction products or by biological spectator species is known to inactivate electrochemical sensors and thus limit their use in biological conditions. Here we present an investigation on the stability of boron doped diamond (BDD) electrodes with different levels of doping. Three different doping levels were used (0.1, 1 and 5% in the carbon phase). The highly doped (5%) BDD is of particular interest as it is here used for the first time for biological applications. Three different redox reactions were examined based on their electrode reaction characteristics: ruthenium(III) hexaammine (outer sphere), ferrocyanide (surface dependent), dopamine (adsorption mediated). The effect of albumin at blood concentration was studied. All results were compared with glassy carbon. There were no significant differences for the outer sphere electrochemistry, but all the BDDs showed improved resistance to fouling for the ferrocyanide oxidation. The electrocatalytic activity of BBD towards dopamine oxidation increased with increased boron content. However, this appears to be due to a larger number of defect sites which also increases the vulnerability to fouling by albumin and by electrode reaction products and the 5% BDD had similar properties to glassy carbon in this regard. These results suggest that it is possible to optimise the BDD performance for specific applications and that the large potential window for BDD may be due, at least in part, to its relatively poor electrocatalytic activity.

  15. N-type control of single-crystal diamond films by ultra-lightly phosphorus doping

    NASA Astrophysics Data System (ADS)

    Kato, Hiromitsu; Ogura, Masahiko; Makino, Toshiharu; Takeuchi, Daisuke; Yamasaki, Satoshi

    2016-10-01

    A wide impurity doping range of p- and n-type diamond semiconductors will facilitate the development of various electronics. This study focused on producing n-type diamond with ultra-lightly impurity doping concentrations. N-type single-crystal diamond films were grown on (111)-oriented diamond substrates by phosphorus doping using the optimized doping conditions based on microwave plasma-enhanced chemical vapor deposition with a high magnetron output power of 3600 W. The surface morphology was investigated by an optical microscopy using the Nomarski prism and confocal laser microscopy, and the phosphorus concentration was estimated by a secondary ion mass spectrometry. The phosphorus concentration was reproducibly controlled to between 2 × 1015 and 3 × 1017 cm-3 using a standard mass flow controller, and the average incorporation efficiency was around 0.1%. The electrical properties of the films were characterized by the Hall effect measurements as a function of temperature over a wide range from 220 to 900 K. N-type conductivity with thermal activation from a phosphorus donor level at around 0.57 eV was clearly observed for all the phosphorus-doped diamond films. The electron mobility of the film with a phosphorus concentration of 2 × 1015 cm-3 was recorded at 1060 cm2/V s at 300 K and 1500 cm2/V s at 225 K.

  16. Using Si-doped diamond plate of sandwich type for spatial profiling of laser beam

    NASA Astrophysics Data System (ADS)

    Shershulin, V. A.; Samoylenko, S. R.; Sedov, V. S.; Kudryavtsev, O. S.; Ralchenko, V. G.; Nozhkina, A. V.; Vlasov, I. I.; Konov, V. I.

    2017-02-01

    We demonstrated a laser beam profiling method based on imaging of the laser induced photoluminescence of a transparent single-crystal diamond plate. The luminescence at 738 nm is caused by silicon-vacancy color centers formed in the epitaxial diamond film by its doping with Si during CVD growth of the film. The on-line beam monitor was tested for a cw laser emitting at 660 nm wavelength.

  17. Multiple delta doping of single crystal cubic boron nitride films heteroepitaxially grown on (001)diamonds

    NASA Astrophysics Data System (ADS)

    Yin, H.; Ziemann, P.

    2014-06-01

    Phase pure cubic boron nitride (c-BN) films have been epitaxially grown on (001) diamond substrates at 900 °C. The n-type doping of c-BN epitaxial films relies on the sequential growth of nominally undoped (p-) and Si doped (n-) layers with well-controlled thickness (down to several nanometer range) in the concept of multiple delta doping. The existence of nominally undoped c-BN overgrowth separates the Si doped layers, preventing Si dopant segregation that was observed for continuously doped epitaxial c-BN films. This strategy allows doping of c-BN films can be scaled up to multiple numbers of doped layers through atomic level control of the interface in the future electronic devices. Enhanced electronic transport properties with higher hall mobility (102 cm2/V s) have been demonstrated at room temperature as compared to the normally continuously Si doped c-BN films.

  18. The effect of substrate temperature and growth rate on the doping efficiency of single crystal boron doped diamond

    SciTech Connect

    Demlow, SN; Rechenberg, R; Grotjohn, T

    2014-10-01

    The substrate growth temperature dependence of the plasma gas-phase to solid-phase doping efficiency in single crystal, boron doped diamond (BDD) deposition is investigated. Single crystal diamond (SCD) is grown by microwave plasma assisted chemical vapor deposition (MPACVD) on high pressure, high temperature (HPHT) type Ib substrates. Samples are grown at substrate temperatures of 850-950 degrees C for each of five doping concentration levels, to determine the effect of the growth temperature on the doping efficiency and defect morphology. The substrate temperature during growth is shown to have a significant effect on the grown sample defect morphology, and a temperature dependence of the doping efficiency is also shown. The effect of the growth rate on the doping efficiency is discussed, and the ratio of the boron concentration in the gas phase to the flux of carbon incorporated into the solid diamond phase is shown to be a more predictive measure of the resulting boron concentration than the gas phase boron to carbon ratio that is more commonly reported. (C) 2014 Elsevier B.V. All rights reserved.

  19. Doping of vanadium to nanocrystalline diamond films by hot filament chemical vapor deposition

    PubMed Central

    2012-01-01

    Doping an impure element with a larger atomic volume into crystalline structure of buck crystals is normally blocked because the rigid crystalline structure could not tolerate a larger distortion. However, this difficulty may be weakened for nanocrystalline structures. Diamonds, as well as many semiconductors, have a difficulty in effective doping. Theoretical calculations carried out by DFT indicate that vanadium (V) is a dopant element for the n-type diamond semiconductor, and their several donor state levels are distributed between the conduction band and middle bandgap position in the V-doped band structure of diamond. Experimental investigation of doping vanadium into nanocrystalline diamond films (NDFs) was first attempted by hot filament chemical vapor deposition technique. Acetone/H2 gas mixtures and vanadium oxytripropoxide (VO(OCH2CH2CH3)3) solutions of acetone with V and C elemental ratios of 1:5,000, 1:2,000, and 1:1,000 were used as carbon and vanadium sources, respectively. The resistivity of the V-doped NDFs decreased two orders with the increasing V/C ratios. PMID:22873631

  20. An insight into what superconducts in polycrystalline boron-doped diamonds based on investigations of microstructure

    PubMed Central

    Dubrovinskaia, N.; Wirth, R.; Wosnitza, J.; Papageorgiou, T.; Braun, H. F.; Miyajima, N.; Dubrovinsky, L.

    2008-01-01

    The discovery of superconductivity in polycrystalline boron-doped diamond (BDD) synthesized under high pressure and high temperatures [Ekimov, et al. (2004) Nature 428:542–545] has raised a number of questions on the origin of the superconducting state. It was suggested that the heavy boron doping of diamond eventually leads to superconductivity. To justify such statements more detailed information on the microstructure of the composite materials and on the exact boron content in the diamond grains is needed. For that we used high-resolution transmission electron microscopy and electron energy loss spectroscopy. For the studied superconducting BDD samples synthesized at high pressures and high temperatures the diamond grain sizes are ≈1–2 μm with a boron content between 0.2 (2) and 0.5 (1) at %. The grains are separated by 10- to 20-nm-thick layers and triangular-shaped pockets of predominantly (at least 95 at %) amorphous boron. These results render superconductivity caused by the heavy boron doping in diamond highly unlikely. PMID:18697937

  1. Boron δ-doped (111) diamond solution gate field effect transistors.

    PubMed

    Edgington, Robert; Ruslinda, A Rahim; Sato, Syunsuke; Ishiyama, Yuichiro; Tsuge, Kyosuke; Ono, Tasuku; Kawarada, Hiroshi; Jackman, Richard B

    2012-03-15

    A solution gate field effect transistor (SGFET) using an oxidised boron δ-doped channel on (111) diamond is presented for the first time. Employing an optimised plasma chemical vapour deposition (PECVD) recipe to deposit δ-layers, SGFETs show improved current-voltage (I-V) characteristics in comparison to previous similar devices fabricated on (100) and polycrystalline diamond, where the device is shown to operate in the enhancement mode of operation, achieving channel pinch-off and drain-source current saturation within the electrochemical window of diamond. A maximum gain and transconductance of 3 and 200μS/mm are extracted, showing comparable figures of merit to hydrogen-based SGFET. The oxidised device shows a site-binding model pH sensitivity of 36 mV/pH, displaying fast temporal responses. Considering the biocompatibility of diamond towards cells, the device's highly mutable transistor characteristics, pH sensitivity and stability against anodic oxidation common to hydrogen terminated diamond SGFET, oxidised boron δ-doped diamond SGFETs show promise for the recording of action potentials from electrogenic cells.

  2. X-ray absorption fine structure study of heavily P doped (111) and (001) diamond

    NASA Astrophysics Data System (ADS)

    Shikata, Shinichi; Yamaguchi, Koji; Fujiwara, Akihiko; Tamenori, Yusuke; Yahiro, Jumpei; Kunisu, Masahiro; Yamada, Takatoshi

    2017-02-01

    X-ray absorption fine structure (XANES) measurements were carried out for P doped (111) and (001) diamond films, and the results were compared with those from simulations. For the (111) spectrum, the main strong peak observed at 2147.0 eV and three broad peaks centered at 2150 eV, 2157 eV, and 2165 eV were observed. The assignment with the estimation by the simulation of the XANES peaks showed the interstitial sites additional to the substitutional site. The Extended X-ray Absorption Fine Structure (EXAFS) result of the P doped (111) diamond showed that the first and second neighboring peaks are observed at 1.21 A and 2.0 A, respectively. The assignment with the estimation by the simulation of the EXAFS peaks also showed the interstitial sites additional to the substitutional site. Overall, P in diamonds presumably has dopant sites in both the substitutional and interstitial sites.

  3. Surface Modification of Boron-Doped Diamond with Microcrystalline Copper Phthalocyanine: Oxygen Reduction Catalysis.

    PubMed

    Gan, Patrick; Foord, John S; Compton, Richard G

    2015-10-01

    Surface modification of boron-doped diamond (BDD) with copper phthalocyanine was achieved using a simple and convenient dropcast deposition, giving rise to a microcrystalline structure. Both unmodified and modified BDD electrodes of different surface terminations (namely hydrogen and oxygen) were compared via the electrochemical reduction of oxygen in aqueous solution. A significant lowering of the cathodic overpotential by about 500 mV was observed after modification of hydrogen-terminated (hydrophobic) diamond, while no voltammetric peak was seen on modified oxidised (hydrophilic) diamond, signifying greater interaction between copper phthalocyanine and the hydrogen-terminated BDD. Oxygen reduction was found to undergo a two-electron process on the modified hydrogen-terminated diamond, which was shown to be also active for the reduction of hydrogen peroxide. The lack of a further conversion of the peroxide was attributed to its rapid diffusion away from the triple phase boundary at which the reaction is expected to exclusively occur.

  4. Surface Modification of Boron-Doped Diamond with Microcrystalline Copper Phthalocyanine: Oxygen Reduction Catalysis

    PubMed Central

    Gan, Patrick; Foord, John S; Compton, Richard G

    2015-01-01

    Surface modification of boron-doped diamond (BDD) with copper phthalocyanine was achieved using a simple and convenient dropcast deposition, giving rise to a microcrystalline structure. Both unmodified and modified BDD electrodes of different surface terminations (namely hydrogen and oxygen) were compared via the electrochemical reduction of oxygen in aqueous solution. A significant lowering of the cathodic overpotential by about 500 mV was observed after modification of hydrogen-terminated (hydrophobic) diamond, while no voltammetric peak was seen on modified oxidised (hydrophilic) diamond, signifying greater interaction between copper phthalocyanine and the hydrogen-terminated BDD. Oxygen reduction was found to undergo a two-electron process on the modified hydrogen-terminated diamond, which was shown to be also active for the reduction of hydrogen peroxide. The lack of a further conversion of the peroxide was attributed to its rapid diffusion away from the triple phase boundary at which the reaction is expected to exclusively occur. PMID:26491640

  5. Cytotoxicity of Boron-Doped Nanocrystalline Diamond Films Prepared by Microwave Plasma Chemical Vapor Deposition

    NASA Astrophysics Data System (ADS)

    Liu, Dan; Gou, Li; Ran, Junguo; Zhu, Hong; Zhang, Xiang

    2015-07-01

    Boron-doped nanocrystalline diamond (NCD) exhibits extraordinary mechanical properties and chemical stability, making it highly suitable for biomedical applications. For implant materials, the impact of boron-doped NCD films on the character of cell growth (i.e., adhesion, proliferation) is very important. Boron-doped NCD films with resistivity of 10-2 Ω·cm were grown on Si substrates by the microwave plasma chemical vapor deposition (MPCVD) process with H2 bubbled B2O3. The crystal structure, diamond character, surface morphology, and surface roughness of the boron-doped NCD films were analyzed using different characterization methods, such as X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM) and atomic force microscopy (AFM). The contact potential difference and possible boron distribution within the film were studied with a scanning kelvin force microscope (SKFM). The cytotoxicity of films was studied by in vitro tests, including fluorescence microscopy, SEM and MTT assay. Results indicated that the surface roughness value of NCD films was 56.6 nm and boron was probably accumulated at the boundaries between diamond agglomerates. MG-63 cells adhered well and exhibited a significant growth on the surface of films, suggesting that the boron-doped NCD films were non-toxic to cells. supported by the Open Foundation of State Key Laboratory of Electronic Thin Films and Integrated Devices (University of Electronic Science and Technology of China) (No. KFJJ201313)

  6. Three-dimensional MgB2-type superconductivity in hole-doped diamond.

    PubMed

    Boeri, Lilia; Kortus, Jens; Andersen, O K

    2004-12-03

    We substantiate by numerical and analytical calculations that the recently discovered superconductivity below 4 K in 3% boron-doped diamond is caused by electron-phonon coupling of the same type as in MgB2, albeit in three dimensions. Holes at the top of the zone-centered, degenerate sigma-bonding valence-band couple strongly to the optical bond-stretching modes. The increase from two to three dimensions reduces the mode softening crucial for T(c) reaching 40 K in MgB2. Even if diamond had the same bare coupling constant as MgB2, which could be achieved with 10% doping, T(c) would be only 25 K. Superconductivity above 1 K in Si (Ge) requires hole doping beyond 5% (10%).

  7. The pressure sensitivity of wrinkled B-doped nanocrystalline diamond membranes

    PubMed Central

    Drijkoningen, S.; Janssens, S. D.; Pobedinskas, P.; Koizumi, S.; Van Bael, M. K.; Haenen, K.

    2016-01-01

    Nanocrystalline diamond (NCD) membranes are promising candidates for use as sensitive pressure sensors. NCD membranes are able to withstand harsh conditions and are easily fabricated on glass. In this study the sensitivity of heavily boron doped NCD (B:NCD) pressure sensors is evaluated with respect to different types of supporting glass substrates, doping levels and membrane sizes. Higher pressure sensing sensitivities are obtained for membranes on Corning Eagle 2000 glass, which have a better match in thermal expansion coefficient with diamond compared to those on Schott AF45 glass. In addition, it is shown that larger and more heavily doped membranes are more sensitive. After fabrication of the membranes, the stress in the B:NCD films is released by the emergence of wrinkles. A better match between the thermal expansion coefficient of the NCD layer and the underlying substrate results in less stress and a smaller amount of wrinkles as confirmed by Raman spectroscopy and 3D surface imaging. PMID:27767048

  8. Friction and wear performance of boron doped, undoped microcrystalline and fine grained composite diamond films

    NASA Astrophysics Data System (ADS)

    Wang, Xinchang; Wang, Liang; Shen, Bin; Sun, Fanghong

    2015-01-01

    Chemical vapor deposition (CVD) diamond films have attracted more attentions due to their excellent mechanical properties. Whereas as-fabricated traditional diamond films in the previous studies don't have enough adhesion or surface smoothness, which seriously impact their friction and wear performance, and thus limit their applications under extremely harsh conditions. A boron doped, undoped microcrystalline and fine grained composite diamond (BD-UM-FGCD) film is fabricated by a three-step method adopting hot filament CVD (HFCVD) method in the present study, presenting outstanding comprehensive performance, including the good adhesion between the substrate and the underlying boron doped diamond (BDD) layer, the extremely high hardness of the middle undoped microcrystalline diamond (UMCD) layer, as well as the low surface roughness and favorable polished convenience of the surface fine grained diamond (FGD) layer. The friction and wear behavior of this composite film sliding against low-carbon steel and silicon nitride balls are studied on a ball-on-plate rotational friction tester. Besides, its wear rate is further evaluated under a severer condition using an inner-hole polishing apparatus, with low-carbon steel wire as the counterpart. The test results show that the BD-UM-FGCD film performs very small friction coefficient and great friction behavior owing to its high surface smoothness, and meanwhile it also has excellent wear resistance because of the relatively high hardness of the surface FGD film and the extremely high hardness of the middle UMCD film. Moreover, under the industrial conditions for producing low-carbon steel wires, this composite film can sufficiently prolong the working lifetime of the drawing dies and improve their application effects. This research develops a novel composite diamond films owning great comprehensive properties, which have great potentials as protecting coatings on working surfaces of the wear-resistant and anti

  9. Electroanalysis of tetracycline using nickel-implanted boron-doped diamond thin film electrode applied to flow injection system.

    PubMed

    Treetepvijit, Surudee; Chuanuwatanakul, Suchada; Einaga, Yasuaki; Sato, Rika; Chailapakult, Orawon

    2005-05-01

    The electrochemical analysis of tetracycline was investigated using nickel-implanted boron-doped diamond thin film electrode by cyclic voltammetry and amperometry with a flow injection system. Cyclic voltammetry was used to study the electrochemical oxidation of tetracycline. Comparison experiments were carried out using as-deposited boron-doped diamond thin film electrode (BDD). Nickel-implanted boron-doped diamond thin film electrode (Ni-DIA) provided well-resolved oxidation irreversible cyclic voltammograms. The current signals were higher than those obtained using the as-deposited BDD electrode. Results using nickel-implanted boron-doped diamond thin film electrode in flow injection system coupled with amperometric detection are presented. The optimum potential for tetracycline was 1.55 V versus Ag/AgCl. The linear range of 1.0 to 100 microM and the detection limit of 10 nM were obtained. In addition, the application for drug formulation was also investigated.

  10. Improvements in the Formation of Boron-Doped Diamond Coatings on Platinum Wires Using the Novel Nucleation Process (NNP)

    PubMed Central

    Fhaner, Mathew; Zhao, Hong; Bian, Xiaochun; Galligan, James J.; Swain, Greg M.

    2010-01-01

    In order to increase the initial nucleation density for the growth of boron-doped diamond on platinum wires, we employed the novel nucleation process (NNP) originally developed by Rotter et al. and discussed by others [1–3]. This pretreatment method involves (i) the initial formation of a thin carbon layer over the substrate followed by (ii) ultrasonic seeding of this “soft” carbon layer with nanoscale particles of diamond. This two-step pretreatment is followed by the deposition of boron-doped diamond by microwave plasma-assisted CVD. Both the diamond seed particles and sites on the carbon layer itself function as the initial nucleation zones for diamond growth from an H2-rich source gas mixture. We report herein on the characterization of the pre-growth carbon layer formed on Pt as well as boron-doped films grown for 2, 4 and 6 h post NNP pretreatment. Results from scanning electron microscopy, Raman spectroscopy and electrochemical studies are reported. The NNP method increases the initial nucleation density on Pt and leads to the formation of a continuous diamond film in a shorter deposition time than is typical for wires pretreated by conventional ultrasonic seeding. The results indicate that the pregrowth layer itself consists of nanoscopic domains of diamond and functions well to enhance the initial nucleation of diamond without any diamond powder seeding. PMID:21617759

  11. Single crystal diamond boron 'delta doped' nanometric layers for 2D electronic devices (Conference Presentation)

    NASA Astrophysics Data System (ADS)

    Butler, James

    2016-10-01

    Use of diamond as a semiconductor material suffers from the high activation energy of all known impurity dopants (0.37 eV for Boron, 0.6 eV for Phosphorous). To achieve the simultaneous carrier concentration and mobility desired for devices operating at room temperature, growth of a nanometric thick `delta' layer doped to above the metal insulator transition adjacent to high mobility intrinsic material can provide a 2D high mobility conduction layer. Critical to obtaining the enhanced mobility of the carriers in the layer next to the `delta' doped layer is the abruptness of the doping interface. Single and multiple nanometer thick epitaxial layers of heavily boron `delta' doped diamond have been grown on high quality, intrinsic lab grown diamond single crystals. These layers were grown in a custom microwave plasma activated chemical vapor deposition reactor based on a rapid reactant switching technique. Characterization of the `delta' layers by various analytical techniques will be presented. Electrical measurements demonstrating enhanced hole mobility (100 to 800 cm2/V sec) as well as other electrical characterizations will be presented.

  12. Thermal conductivity changes upon neutron transmutation of {sup 10}B doped diamond

    SciTech Connect

    Jagannadham, K.; Verghese, K.; Butler, J. E.

    2014-08-28

    {sup 10}B doped p-type diamond samples were subjected to neutron transmutation reaction using thermal neutron flux of 0.9 × 10{sup 13} cm{sup −2} s{sup −1} and fast neutron flux of 0.09 × 10{sup 13} cm{sup −2} s{sup −1}. Another sample of epilayer grown on type IIa (110) single crystal diamond substrate was subjected to equal thermal and fast neutron flux of 10{sup 14} cm{sup −2} s{sup −1}. The defects in the diamond samples were previously characterized by different methods. In the present work, thermal conductivity of these diamond samples was determined at room temperature by transient thermoreflectance method. The thermal conductivity change in the samples as a function of neutron fluence is explained by the phonon scattering from the point defects and disordered regions. The thermal conductivity of the diamond samples decreased more rapidly initially and less rapidly for larger neutron fluence. In addition, the thermal conductivity in type IIb diamond decreased less rapidly with thermal neutron fluence compared to the decrease in type IIa diamond subjected to fast neutron fluence. It is concluded that the rate of production of defects during transmutation reaction is slower when thermal neutrons are used. The thermal conductivity of epilayer of diamond subjected to high thermal and fast neutron fluence is associated with the covalent carbon network in the composite structure consisting of disordered carbon and sp{sup 2} bonded nanocrystalline regions.

  13. Ultraviolet photosensitivity of sulfur-doped micro- and nano-crystalline diamond

    SciTech Connect

    Mendoza, Frank; Makarov, Vladimir; Hidalgo, Arturo; Weiner, Brad; Morell, Gerardo

    2011-06-06

    The room-temperature photosensitivity of sulfur-doped micro- (MCD), submicro- (SMCD) and nano- (NCD) crystalline diamond films synthesized by hot-filament chemical vapor deposition was studied. The structure and composition of these diamond materials were characterized by Raman spectroscopy, scanning electron microscopy and X-ray diffraction. The UV sensitivity and response time were studied for the three types of diamond materials using a steady state broad UV excitation source and two pulsed UV laser radiations. It was found that they have high sensitivity in the UV region, as high as 109 sec-1mV-1 range, linear response in a broad spectral range below 320 nm, photocurrents around ~10-5 A, and short response time better than 100 ns, which is independent of fluency intensity. A phenomenological model was applied to help understand the role of defects and dopant concentration on the materials’ photosensitivity.

  14. Ultraviolet photosensitivity of sulfur-doped micro- and nano-crystalline diamond

    DOE PAGES

    Mendoza, Frank; Makarov, Vladimir; Hidalgo, Arturo; ...

    2011-06-06

    The room-temperature photosensitivity of sulfur-doped micro- (MCD), submicro- (SMCD) and nano- (NCD) crystalline diamond films synthesized by hot-filament chemical vapor deposition was studied. The structure and composition of these diamond materials were characterized by Raman spectroscopy, scanning electron microscopy and X-ray diffraction. The UV sensitivity and response time were studied for the three types of diamond materials using a steady state broad UV excitation source and two pulsed UV laser radiations. It was found that they have high sensitivity in the UV region, as high as 109 sec-1mV-1 range, linear response in a broad spectral range below 320 nm, photocurrentsmore » around ~10-5 A, and short response time better than 100 ns, which is independent of fluency intensity. A phenomenological model was applied to help understand the role of defects and dopant concentration on the materials’ photosensitivity.« less

  15. Method of synthesizing metal doped diamond-like carbon films

    NASA Technical Reports Server (NTRS)

    Ueno, Mayumi (Inventor); Sunkara, Mahendra Kumar (Inventor)

    2003-01-01

    A method of synthesizing metal doped carbon films by placing a substrate in a chamber with a selected amount of a metalorganic compound. An electron cyclotron resonance is applied to the chamber in order to vaporize the metalorganic compound. The resonance is applied to the chamber until a metal doped carbon film is formed. The metalorganic compound is preferably selected from the group consisting of an organic salt of ruthenium, palladium, gold or platinum.

  16. A practical guide to using boron doped diamond in electrochemical research.

    PubMed

    Macpherson, Julie V

    2015-02-07

    Conducting, boron doped diamond (BDD), in addition to its superior material properties, offers several notable attributes to the electrochemist making it an intriguing material for electrochemical research. These include the widest solvent window of all electrode materials; low background and capacitive currents; reduced fouling compared to other electrodes and; the ability to withstand extreme potentials, corrosive and high temperature/pressure environments. However, BDD is not your typical electrode material, it is a semi-conductor doped degenerately with boron to present semi-metallic characteristics. Input from materials scientists, chemists and physicists has been required to aid understanding of how to work with this material from an electrochemical viewpoint and improve electrode quality. Importantly, depending on how the BDD has been grown and then subsequently treated, prior to electrochemical measurement, the resulting material properties can vary quite significantly from one electrode to the next. This likely explains the variability seen by different researchers working on the same experimental systems. The aim of this "protocols" article is not to provide a state-of-the-art review of diamond electrochemistry, suitable references are provided to the interested reader, but instead serves as a reference point for any researcher wishing to commence work with diamond electrodes and interpret electrochemical data. It provides information on how best to characterise the material properties of the electrode before use and outlines the interplay between boron dopant density, non-diamond-carbon content, grain morphology, surface chemistry and redox couple identity. All should ideally be considered when interpretating electrochemical data arising from the diamond electrode. This will aid the reader in making meaningful comparisons between data obtained by different researchers using different diamond electrodes. The guide also aims to help educate the researcher

  17. Effect of nitrogen on the growth of boron doped single crystal diamond

    DOE PAGES

    Karna, Sunil; Vohra, Yogesh

    2013-11-18

    Boron-doped single crystal diamond films were grown homoepitaxially on synthetic (100) Type Ib diamond substrates using microwave plasma assisted chemical vapor deposition. A modification in surface morphology of the film with increasing boron concentration in the plasma has been observed using atomic force microscopy. Use of nitrogen during boron doping has been found to improve the surface morphology and the growth rate of films but it lowers the electrical conductivity of the film. The Raman spectra indicated a zone center optical phonon mode along with a few additional bands at the lower wavenumber regions. The change in the peak profilemore » of the zone center optical phonon mode and its downshift were observed with the increasing boron content in the film. Furthermore, sharpening and upshift of Raman line was observed in the film that was grown in presence of nitrogen along with diborane in process gas.« less

  18. Electrochemical mineralization pathway of quinoline by boron-doped diamond anodes.

    PubMed

    Wang, Chunrong; Ma, Keke; Wu, Tingting; Ye, Min; Tan, Peng; Yan, Kecheng

    2016-04-01

    Boron-doped diamond anodes were selected for quinoline mineralization, and the resulting intermediates, phenylpropyl aldehyde, phenylpropionic acid, and nonanal were identified and followed during quinoline oxidation by gas chromatography-mass spectrometry and high-performance liquid chromatography. The evolutions of formic acid, acetic acid, oxalic acid, NO2(-), NO3(-), and NH4(+) were quantified. A new reaction pathway for quinoline mineralization by boron-doped diamond anodes has been proposed, where the pyridine ring in quinoline is cleaved by a hydroxyl radical giving phenylpropyl aldehyde and NH4(+). Phenylpropyl aldehyde is quickly oxidized into phenylpropionic acid, and the benzene ring is cleaved giving nonanal. This is further oxidized to formic acid, acetic acid, and oxalic acid. Finally, these organic intermediates are mineralized to CO2 and H2O. NH4(+) is also oxidized to NO2(-) and on to NO3(-). The results will help to gain basic reference for clearing intermediates and their toxicity.

  19. Effect of nitrogen on the growth of boron doped single crystal diamond

    SciTech Connect

    Karna, Sunil; Vohra, Yogesh

    2013-11-18

    Boron-doped single crystal diamond films were grown homoepitaxially on synthetic (100) Type Ib diamond substrates using microwave plasma assisted chemical vapor deposition. A modification in surface morphology of the film with increasing boron concentration in the plasma has been observed using atomic force microscopy. Use of nitrogen during boron doping has been found to improve the surface morphology and the growth rate of films but it lowers the electrical conductivity of the film. The Raman spectra indicated a zone center optical phonon mode along with a few additional bands at the lower wavenumber regions. The change in the peak profile of the zone center optical phonon mode and its downshift were observed with the increasing boron content in the film. Furthermore, sharpening and upshift of Raman line was observed in the film that was grown in presence of nitrogen along with diborane in process gas.

  20. Concurrent doping effect of Ti and nano-diamond on flux pinning of MgB 2

    NASA Astrophysics Data System (ADS)

    Zhao, Y.; Ke, C.; Cheng, C. H.; Feng, Y.; Yang, Y.; Munroe, P.

    2010-11-01

    Nano-diamond and titanium concurrently doped MgB2 nanocomposites have been prepared by solid state reaction method. The effects of carbon and Ti concurrent doping on Jc-H behavior and pinning force scaling features of MgB2 have been investigated. Although Tc was slightly depressed, Jc of MgB2 have been significantly improved by the nano-diamond doping, especially in the high field region. In the mean time, the Jc value in low field region is sustained though concurrent Ti doping. Microstructure analysis reveals that when nano-diamond was concurrently doped with titanium in MgB2, a unique nanocomposite in which TiB2 forms a thin layer surrounding MgB2 grains whereas nano-diamond particles were wrapped inside the MgB2 grains. Besides, nano-diamond doping results in a high density stress field in the MgB2 samples, which may take responsibility for the Δκ pinning behavior in the carbon-doped MgB2 system.

  1. In vivo biocompatibility of boron doped and nitrogen included conductive-diamond for use in medical implants.

    PubMed

    Garrett, David J; Saunders, Alexia L; McGowan, Ceara; Specks, Joscha; Ganesan, Kumaravelu; Meffin, Hamish; Williams, Richard A; Nayagam, David A X

    2016-01-01

    Recently, there has been interest in investigating diamond as a material for use in biomedical implants. Diamond can be rendered electrically conducting by doping with boron or nitrogen. This has led to inclusion of boron doped and nitrogen included diamond elements as electrodes and/or feedthroughs for medical implants. As these conductive device elements are not encapsulated, there is a need to establish their clinical safety for use in implants. This article compares the biocompatibility of electrically conducting boron doped diamond (BDD) and nitrogen included diamond films and electrically insulating poly crystalline diamond films against a silicone negative control and a BDD sample treated with stannous octoate as a positive control. Samples were surgically implanted into the back muscle of a guinea pig for a period of 4-15 weeks, excised and the implant site sectioned and submitted for histological analysis. All forms of diamond exhibited a similar or lower thickness of fibrotic tissue encapsulating compared to the silicone negative control samples. All forms of diamond exhibited similar or lower levels of acute, chronic inflammatory, and foreign body responses compared to the silicone negative control indicating that the materials are well tolerated in vivo.

  2. Optical patterning of trapped charge in nitrogen-doped diamond

    PubMed Central

    Jayakumar, Harishankar; Henshaw, Jacob; Dhomkar, Siddharth; Pagliero, Daniela; Laraoui, Abdelghani; Manson, Neil B.; Albu, Remus; Doherty, Marcus W.; Meriles, Carlos A.

    2016-01-01

    The nitrogen-vacancy (NV) centre in diamond is emerging as a promising platform for solid-state quantum information processing and nanoscale metrology. Of interest in these applications is the manipulation of the NV charge, which can be attained by optical excitation. Here, we use two-colour optical microscopy to investigate the dynamics of NV photo-ionization, charge diffusion and trapping in type-1b diamond. We combine fixed-point laser excitation and scanning fluorescence imaging to locally alter the concentration of negatively charged NVs, and to subsequently probe the corresponding redistribution of charge. We uncover the formation of spatial patterns of trapped charge, which we qualitatively reproduce via a model of the interplay between photo-excited carriers and atomic defects. Further, by using the NV as a probe, we map the relative fraction of positively charged nitrogen on localized optical excitation. These observations may prove important to transporting quantum information between NVs or to developing three-dimensional, charge-based memories. PMID:27573190

  3. Optical patterning of trapped charge in nitrogen-doped diamond

    NASA Astrophysics Data System (ADS)

    Jayakumar, Harishankar; Henshaw, Jacob; Dhomkar, Siddharth; Pagliero, Daniela; Laraoui, Abdelghani; Manson, Neil B.; Albu, Remus; Doherty, Marcus W.; Meriles, Carlos A.

    2016-08-01

    The nitrogen-vacancy (NV) centre in diamond is emerging as a promising platform for solid-state quantum information processing and nanoscale metrology. Of interest in these applications is the manipulation of the NV charge, which can be attained by optical excitation. Here, we use two-colour optical microscopy to investigate the dynamics of NV photo-ionization, charge diffusion and trapping in type-1b diamond. We combine fixed-point laser excitation and scanning fluorescence imaging to locally alter the concentration of negatively charged NVs, and to subsequently probe the corresponding redistribution of charge. We uncover the formation of spatial patterns of trapped charge, which we qualitatively reproduce via a model of the interplay between photo-excited carriers and atomic defects. Further, by using the NV as a probe, we map the relative fraction of positively charged nitrogen on localized optical excitation. These observations may prove important to transporting quantum information between NVs or to developing three-dimensional, charge-based memories.

  4. Boron-doped diamond nanograss array for electrochemical sensors.

    PubMed

    Wei, Min; Terashima, Chiaki; Lv, Mei; Fujishima, Akira; Gu, Zhong-Ze

    2009-06-28

    A novel BDD nanograss array has been prepared simply on a heavily doped BDD film by reactive ion etching for use as an electrochemical sensor, which improved the reactive site, promoted the electrocatalytic activity, accelerated the electron transfer, and enhanced the selectivity.

  5. Metalorganic Chemical Vapor Deposition of Ruthenium-Doped Diamond like Carbon Films

    NASA Technical Reports Server (NTRS)

    Sunkara, M. K.; Ueno, M.; Lian, G.; Dickey, E. C.

    2001-01-01

    We investigated metalorganic precursor deposition using a Microwave Electron Cyclotron Resonance (ECR) plasma for depositing metal-doped diamondlike carbon films. Specifically, the deposition of ruthenium doped diamondlike carbon films was investigated using the decomposition of a novel ruthenium precursor, Bis(ethylcyclopentadienyl)-ruthenium (Ru(C5H4C2H5)2). The ruthenium precursor was introduced close to the substrate stage. The substrate was independently biased using an applied RF power. Films were characterized using Fourier Transform Infrared Spectroscopy (FTIR), Transmission Electron Microscopy (TEM) and Four Point Probe. The conductivity of the films deposited using ruthenium precursor showed strong dependency on the deposition parameters such as pressure. Ruthenium doped sample showed the presence of diamond crystallites with an average size of approx. 3 nm while un-doped diamondlike carbon sample showed the presence of diamond crystallites with an average size of 11 nm. TEM results showed that ruthenium was atomically dispersed within the amorphous carbon network in the films.

  6. Development of boron-doped diamond thin-films as voltammetric and amperometric detectors

    NASA Astrophysics Data System (ADS)

    Xu, Jishou

    2000-10-01

    The utilization of boron-doped diamond thin-films for applications in electroanalysis was investigated. Voltammetric analysis in static solution, and amperometric detection coupled with flow injection analysis and HPLC were performed. The results were compared to those for glassy carbon. The electroactivity, the merit of detection figures, the adsorption of polar organic molecules, and the resistance to fouling were studied. Surface characterization was performed to elucidate the surface property-electroacticvity relationship. The results showed that diamond thin-films, compared with glassy carbon, had comparable electroactivity to simple electron transfer processes (e.g., Ru(NH3)6+2/+3, Fe(CN)6 -3/-4, IrCl6-2/-3, azide, chlorpromazine), but had lower electroactivity for the electron transfer processes involving surface-confined intermediate (e.g., hydrogen evolution, oxygen evolution, 4-methyl catechol, hydrazine). The diamond thin-films had a wide working potential up to 4.0 V in aqueous media. They also had small double layer capacitance, voltammetric background current, and amperometric residual current. These properties had leaded to higher signal-to-background ratios and signal-to-noise ratios. The diamond thin-films had lower limits of detection in voltammetric measurements of several analytes, and had lower limits of detection in amperometric measurements of all compounds studied. The diamond thin-films had negligible adsorption of polar organic molecules (e.g., anthraquinone 2,6-disulfonate, chlorpromazine), compared to glassy carbon. This is due to the fact that the diamond surfaces are primarily composed of sp3 carbon and hydrogen terminated. This leaded to less decay of the electroactivity by storage and operation, and higher resistance to fouling. The surface property-electroactivity relationship depends on the specific mechanism for electron transfer. The extent of non-diamond impurities (e.g., oxygen evolution), diamond crystalline size, surface

  7. Critical boron-doping levels for generation of dislocations in synthetic diamond

    SciTech Connect

    Alegre, M. P. Araújo, D.; Pinero, J. C.; Lloret, F.; Villar, M. P.; Fiori, A.; Achatz, P.; Chicot, G.; Bustarret, E.; Jomard, F.

    2014-10-27

    Defects induced by boron doping in diamond layers were studied by transmission electron microscopy. The existence of a critical boron doping level above which defects are generated is reported. This level is found to be dependent on the CH{sub 4}/H{sub 2} molar ratios and on growth directions. The critical boron concentration lied in the 6.5–17.0 × 10{sup 20}at/cm{sup 3} range in the 〈111〉 direction and at 3.2 × 10{sup 21 }at/cm{sup 3} for the 〈001〉 one. Strain related effects induced by the doping are shown not to be responsible. From the location of dislocations and their Burger vectors, a model is proposed, together with their generation mechanism.

  8. Fabrication and Characterization of N-Type Zinc Oxide/P-Type Boron Doped Diamond Heterojunction

    NASA Astrophysics Data System (ADS)

    Marton, Marián; Mikolášek, Miroslav; Bruncko, Jaroslav; Novotný, Ivan; Ižák, Tibor; Vojs, Marian; Kozak, Halyna; Varga, Marián; Artemenko, Anna; Kromka, Alexander

    2015-09-01

    Diamond and ZnO are very promising wide-bandgap materials for electronic, photovoltaic and sensor applications because of their excellent electrical, optical, physical and electrochemical properties and biocompatibility. In this contribution we show that the combination of these two materials opens up the potential for fabrication of bipolar heterojunctions. Semiconducting boron doped diamond (BDD) thin films were grown on Si and UV grade silica glass substrates by HFCVD method with various boron concentration in the gas mixture. Doped zinc oxide (ZnO:Al, ZnO:Ge) thin layers were deposited by diode sputtering and pulsed lased deposition as the second semiconducting layer on the diamond films. The amount of dopants within the films was varied to obtain optimal semiconducting properties to form a bipolar p-n junction. Finally, different ZnO/BDD heterostructures were prepared and analyzed. Raman spectroscopy, SEM, Hall constant and I-V measurements were used to investigate the quality, structural and electrical properties of deposited heterostructures, respectively. I-V measurements of ZnO/BDD diodes show a rectifying ratio of 55 at ±4 V. We found that only very low dopant concentrations for both semiconducting materials enabled us to fabricate a functional p-n junction. Obtained results are promising for fabrication of optically transparent ZnO/BDD bipolar heterojunction.

  9. Fabrication of a nanometer thick nitrogen delta doped layer at the sub-surface region of (100) diamond

    NASA Astrophysics Data System (ADS)

    Chandran, Maneesh; Michaelson, Shaul; Saguy, Cecile; Hoffman, Alon

    2016-11-01

    In this letter, we report on the proof of a concept of an innovative delta doping technique to fabricate an ensemble of nitrogen vacancy centers at shallow depths in (100) diamond. A nitrogen delta doped layer with a concentration of ˜1.8 × 1020 cm-3 and a thickness of a few nanometers was produced using this method. Nitrogen delta doping was realized by producing a stable nitrogen terminated (N-terminated) diamond surface using the RF nitridation process and subsequently depositing a thin layer of diamond on the N-terminated diamond surface. The concentration of nitrogen on the N-terminated diamond surface and its stability upon exposure to chemical vapor deposition conditions are determined by x-ray photoelectron spectroscopy analysis. The SIMS profile exhibits a positive concentration gradient of 1.9 nm/decade and a negative gradient of 4.2 nm/decade. The proposed method offers a finer control on the thickness of the delta doped layer than the currently used ion implantation and delta doping techniques.

  10. Transient photoresponse of nitrogen-doped ultrananocrystalline diamond electrodes in saline solution

    NASA Astrophysics Data System (ADS)

    Ahnood, Arman; Simonov, Alexandr N.; Laird, Jamie S.; Maturana, Matias I.; Ganesan, Kumaravelu; Stacey, Alastair; Ibbotson, Michael R.; Spiccia, Leone; Prawer, Steven

    2016-03-01

    Beyond conventional electrically-driven neuronal stimulation methods, there is a growing interest in optically-driven approaches. In recent years, nitrogen-doped ultrananocrystalline diamond (N-UNCD) has emerged as a strong material candidate for use in electrically-driven stimulation electrodes. This work investigates the electrochemical activity of N-UNCD in response to pulsed illumination, to assess its potential for use as an optically-driven stimulation electrode. Whilst N-UNCD in the as-grown state exhibits a weak photoresponse, the oxygen plasma treated film exhibits two orders of magnitude enhancement in its sub-bandgap open circuit photovoltage response. The enhancement is attributed to the formation of a dense network of oxygen-terminated diamond nanocrystals at the N-UNCD surface. Electrically connected to the N-UNCD bulk via sub-surface graphitic grain boundaries, these diamond nanocrystals introduce a semiconducting barrier between the sub-surface graphitic semimetal and the electrolyte solution, leading to a photovoltage under irradiation with wavelengths of λ = 450 nm and shorter. Within the safe optical exposure limit of 2 mW mm-2, charge injection capacity of 0.01 mC cm-2 is achieved using a 15 × 15 μm electrode, meeting the requirements for extracellular and intercellular stimulation. The nanoscale nature of processes presented here along with the diamond's biocompatibility and biostability open an avenue for the use of oxygen treated N-UNCD as optically driven stimulating electrodes.

  11. Ferromagnetic ordering of Cr and Fe doped p-type diamond: An ab initio study

    NASA Astrophysics Data System (ADS)

    Benecha, E. M.; Lombardi, E. B.

    2014-02-01

    Ferromagnetic ordering of transition metal dopants in semiconductors holds the prospect of combining the capabilities of semiconductors and magnetic systems in single hybrid devices for spintronic applications. Various semiconductors have so far been considered for spintronic applications, but low Curie temperatures have hindered room temperature applications. We report ab initio DFT calculations on the stability and magnetic properties of Fe and Cr impurities in diamond, and show that their ground state magnetic ordering and stabilization energies depend strongly on the charge state and type of co-doping. We predict that divacancy Cr+2 and substitutional Fe+1 order ferromagnetically in p-type diamond, with magnetic stabilization energies (and magnetic moment per impurity ion) of 16.9 meV (2.5 μB) and 33.3 meV (1.0 μB), respectively. These magnetic stabilization energies are much larger than what has been achieved in other semiconductors at comparable impurity concentrations, including the archetypal dilute magnetic semiconductor GaAs:Mn. In addition, substitutional Fe+1 exhibits a strong half-metallic character, with the Fermi level crossing bands in only the spin down channel. These results, combined with diamond's extreme properties, demonstrate that Cr or Fe dopedp-type diamond may successfully be considered in the search for room temperature spintronic materials.

  12. Simulation and bonding of dopants in nanocrystalline diamond.

    PubMed

    Barnard, A S; Russo, S P; Snook, I K

    2005-09-01

    The doping of the wide-band gap semiconductor diamond has led to the invention of many electronic and optoelectronic devices. Impurities can be introduced into diamond during chemical vapor deposition or high pressure-high temperature growth, resulting in materials with unusual physical and chemical properties. For electronic applications one of the main objectives in the doping of diamond is the production of p-type and n-type semiconductors materials; however, the study of dopants in diamond nanoparticles is considered important for use in nanodevices, or as qubits for quantum computing. Such devices require that bonding of dopants in nanodiamond must be positioned substitutionally at a lattice site, and must exhibit minimal or no possibility of diffusion to the nanocrystallite surface. In light of these requirements, a number of computational studies have been undertaken to examine the stability of various dopants in various forms of nanocrystalline diamond. Presented here is a review of some such studies, undertaken using quantum mechanical based simulation methods, to provide an overview of the crystal stability of doped nanodiamond for use in diamondoid nanodevices.

  13. Relaxation of the resistive superconducting state in boron-doped diamond films

    NASA Astrophysics Data System (ADS)

    Kardakova, A.; Shishkin, A.; Semenov, A.; Goltsman, G. N.; Ryabchun, S.; Klapwijk, T. M.; Bousquet, J.; Eon, D.; Sacépé, B.; Klein, Th.; Bustarret, E.

    2016-02-01

    We report a study of the relaxation time of the restoration of the resistive superconducting state in single crystalline boron-doped diamond using amplitude-modulated absorption of (sub-)THz radiation (AMAR). The films grown on an insulating diamond substrate have a low carrier density of about 2.5 ×1021cm-3 and a critical temperature of about 2 K . By changing the modulation frequency we find a high-frequency rolloff which we associate with the characteristic time of energy relaxation between the electron and the phonon systems or the relaxation time for nonequilibrium superconductivity. Our main result is that the electron-phonon scattering time varies clearly as T-2, over the accessible temperature range of 1.7 to 2.2 K. In addition, we find, upon approaching the critical temperature Tc, evidence for an increasing relaxation time on both sides of Tc.

  14. Spectrally dependent photovoltages in Schottky photodiode based on (100) B-doped diamond

    SciTech Connect

    Čermák, Jan Rezek, Bohuslav; Koide, Yasuo; Takeuchi, Daisuke

    2014-02-07

    Spectrally and spatially resolved photovoltages were measured by Kelvin probe force microscopy (KPFM) on a Schottky photo-diode made of a 4 nm thin tungsten-carbide (WC) layer on a 500 nm oxygen-terminated boron-doped diamond epitaxial layer (O-BDD) that was grown on a Ib (100) diamond substrate. The diode was grounded by the sideways ohmic contact (Ti/WC), and the semitransparent Schottky contact was let unconnected. The electrical potentials across the device were measured in dark (only 650 nm LED of KPFM being on), under broad-band white light (halogen lamp), UV (365 nm diode), and deep ultraviolet (deuterium lamp) illumination. Illumination induced shift of the electrical potential remains within 210 mV. We propose that the photovoltage actually corresponds to a shift of Fermi level inside the BDD channel and thereby explains orders of magnitude changes in photocurrent.

  15. A Study on Electrolytic Corrosion of Boron-Doped Diamond Electrodes when Decomposing Organic Compounds.

    PubMed

    Kashiwada, Takeshi; Watanabe, Takeshi; Ootani, Yusuke; Tateyama, Yoshitaka; Einaga, Yasuaki

    2016-03-02

    Electrolytic corrosion of boron-doped diamond (BDD) electrodes after applying a high positive potential to decompose organic compounds in aqueous solution was studied. Scanning electron microscopy images, Raman spectra, and glow discharge optical emission spectroscopy revealed that relatively highly boron-doped domains were primarily corroded and relatively low boron-doped domains remained after electrolysis. The corrosion due to electrolysis was observed especially in aqueous solutions of acetic acid or propionic acid, while it was not observed in other organic compounds such as formic acid, glucose, and methanol. Electron spin resonance measurements after electrolysis in the acetic acid solution revealed the generation of methyl radicals on the BDD electrodes. Here, the possible mechanisms for the corrosion are discussed. Dangling bonds may be formed due to abstraction of OH groups from C-OH functional groups by methyl radicals generated on the surface of the BDD electrodes. As a result, the sp(3) diamond structure would be converted to the sp(2) carbon structure, which can be easily etched. Furthermore, to prevent electrolytic corrosion during electrolysis, both the current density and the pH condition in the aqueous solution were optimized. At low current densities or high pH, the BDD electrodes were stable without electrolytic corrosion even in the acetic acid aqueous solution.

  16. Boron-doped diamond synthesized at high-pressure and high-temperature with metal catalyst

    NASA Astrophysics Data System (ADS)

    Shakhov, Fedor M.; Abyzov, Andrey M.; Kidalov, Sergey V.; Krasilin, Andrei A.; Lähderanta, Erkki; Lebedev, Vasiliy T.; Shamshur, Dmitriy V.; Takai, Kazuyuki

    2017-04-01

    The boron-doped diamond (BDD) powder consisting of 40-100 μm particles was synthesized at 5 GPa and 1500-1600 °C from a mixture of 50 wt% graphite and 50 wt% Ni-Mn catalyst with an addition of 1 wt% or 5 wt% boron powder. The size of crystal domains of doped and non-doped diamond was evaluated as a coherent scattering region by X-ray diffraction (XRD) and using small-angle neutron scattering (SANS), being ≥180 nm (XRD) and 100 nm (SANS). Magnetic impurities of NiMnx originating from the catalyst in the synthesis, which prevent superconductivity, were detected by magnetization measurements at 2-300 K. X-ray photoelectron spectroscopy, the temperature dependence of the resistivity, XRD, and Raman spectroscopy reveal that the concentration of electrically active boron is as high as (2±1)×1020 cm-3 (0.1 at%). To the best of our knowledge, this is the highest boron content for BDD synthesized in high-pressure high-temperature process with metal catalysts.

  17. Electronic and physico-chemical properties of nanometric boron delta-doped diamond structures

    SciTech Connect

    Chicot, G. Fiori, A.; Tran Thi, T. N.; Bousquet, J.; Delahaye, J.; Grenet, T.; Eon, D.; Omnès, F.; Bustarret, E.; Volpe, P. N.; Tranchant, N.; Mer-Calfati, C.; Arnault, J. C.; Gerbedoen, J. C.; Soltani, A.; De Jaeger, J. C.; Alegre, M. P.; Piñero, J. C.; Araújo, D.; Jomard, F.; and others

    2014-08-28

    Heavily boron doped diamond epilayers with thicknesses ranging from 40 to less than 2 nm and buried between nominally undoped thicker layers have been grown in two different reactors. Two types of [100]-oriented single crystal diamond substrates were used after being characterized by X-ray white beam topography. The chemical composition and thickness of these so-called delta-doped structures have been studied by secondary ion mass spectrometry, transmission electron microscopy, and spectroscopic ellipsometry. Temperature-dependent Hall effect and four probe resistivity measurements have been performed on mesa-patterned Hall bars. The temperature dependence of the hole sheet carrier density and mobility has been investigated over a broad temperature range (6 K < T < 450 K). Depending on the sample, metallic or non-metallic behavior was observed. A hopping conduction mechanism with an anomalous hopping exponent was detected in the non-metallic samples. All metallic delta-doped layers exhibited the same mobility value, around 3.6 ± 0.8 cm{sup 2}/Vs, independently of the layer thickness and the substrate type. Comparison with previously published data and theoretical calculations showed that scattering by ionized impurities explained only partially this low common value. None of the delta-layers showed any sign of confinement-induced mobility enhancement, even for thicknesses lower than 2 nm.

  18. Surface transfer doping of diamond by MoO{sub 3}: A combined spectroscopic and Hall measurement study

    SciTech Connect

    Russell, Stephen A. O. Crawford, Kevin G.; Moran, David A. J.; Cao, Liang; Qi, Dongchen; Tallaire, Alexandre; Wee, Andrew T. S.

    2013-11-11

    Surface transfer doping of diamond has been demonstrated using MoO{sub 3} as a surface electron acceptor material. Synchrotron-based high resolution photoemission spectroscopy reveals that electrons are transferred from the diamond surface to MoO{sub 3}, leading to the formation of a sub-surface quasi 2-dimensional hole gas within the diamond. Ex-situ electrical characterization demonstrated an increase in hole carrier concentration from 1.00 × 10{sup 13}/cm{sup 2} for the air-exposed hydrogen-terminated diamond surface to 2.16 × 10{sup 13}/cm{sup 2} following MoO{sub 3} deposition. This demonstrates the potential to improve the stability and performance of hydrogen-terminated diamond electronic devices through the incorporation of high electron affinity transition metal oxides.

  19. Enhanced surface transfer doping of diamond by V{sub 2}O{sub 5} with improved thermal stability

    SciTech Connect

    Crawford, Kevin G. Moran, David A. J.; Cao, Liang; Qi, Dongchen; Tallaire, Alexandre; Limiti, E.; Verona, C.; Wee, Andrew T. S.

    2016-01-25

    Surface transfer doping of hydrogen-terminated diamond has been achieved utilising V{sub 2}O{sub 5} as a surface electron accepting material. Contact between the oxide and diamond surface promotes the transfer of electrons from the diamond into the V{sub 2}O{sub 5} as revealed by the synchrotron-based high resolution photoemission spectroscopy. Electrical characterization by Hall measurement performed before and after V{sub 2}O{sub 5} deposition shows an increase in hole carrier concentration in the diamond from 3.0 × 10{sup 12} to 1.8 × 10{sup 13 }cm{sup −2} at room temperature. High temperature Hall measurements performed up to 300 °C in atmosphere reveal greatly enhanced thermal stability of the hole channel produced using V{sub 2}O{sub 5} in comparison with an air-induced surface conduction channel. Transfer doping of hydrogen-terminated diamond using high electron affinity oxides such as V{sub 2}O{sub 5} is a promising approach for achieving thermally stable, high performance diamond based devices in comparison with air-induced surface transfer doping.

  20. Structure, Electronic Properties, and Electrochemical Behavior of a Boron-Doped Diamond/Quartz Optically Transparent Electrode.

    PubMed

    Wächter, Naihara; Munson, Catherine; Jarošová, Romana; Berkun, Isil; Hogan, Timothy; Rocha-Filho, Romeu C; Swain, Greg M

    2016-05-31

    The morphology, microstructure, chemistry, electronic properties, and electrochemical behavior of a boron-doped nanocrystalline diamond (BDD) thin film grown on quartz were evaluated. Diamond optically transparent electrodes (OTEs) are useful for transmission spectroelectrochemical measurements, offering excellent stability during anodic and cathodic polarization and exposure to a variety of chemical environments. We report on the characterization of a BDD OTE by atomic force microscopy, optical spectroscopy, Raman spectroscopic mapping, alternating-current Hall effect measurements, X-ray photoelectron spectroscopy, and electrochemical methods. The results reported herein provide the first comprehensive study of the relationship between the physical and chemical structure and electronic properties of a diamond OTE and the electrode's electrochemical activity.

  1. Electronic properties of single-crystal diamonds heavily doped with boron

    SciTech Connect

    Buga, S. G.; Blank, V. D.; Terent'ev, S. A.; Kuznetsov, M. S.; Nosukhin, S. A.; Kulbachinskii, V. A. Krechetov, A. V.; Kytin, V. G.; Kytin, G. A.

    2007-04-15

    Single-crystal diamonds with characteristic sizes of 2-7 mm doped with boron in the concentration range 10{sup 19}-10{sup 20} cm{sup -3} have been grown by the temperature gradient method at high static pressures. The temperature dependence of the resistance R of the synthesized single crystals has been measured in the range 0.5 K < T < 297 K. An activated dependence R(T) with an activation energy of about 50 meV is observed in the range from room temperature to T {approx} 200 K. At temperatures below approximately 50 K, the temperature dependence of the conductivity for heavily doped crystals is proportional to T{sup 1/2}, which is characteristic of degenerate semiconductors with a high number of defects.

  2. Characterization of boron doped diamond-like carbon film by HRTEM

    NASA Astrophysics Data System (ADS)

    Li, X. J.; He, L. L.; Li, Y. S.; Yang, Q.; Hirose, A.

    2015-12-01

    Boron doped diamond-like carbon (B-DLC) film was synthesized on silicon (1 0 0) wafer by biased target ion beam deposition. High-resolution transmission electron microscopy (HRTEM) is employed to investigate the microstructure of the B-DLC thin film in cross-sectional observation. Many crystalline nanoparticles randomly dispersed and embedded in the amorphous matrix film are observed. Through chemical compositional analysis of the B-DLC film, some amount of O element is confirmed to be contained. And also, some nanoparticles with near zone axes are indexed, which are accordance with B2O phase. Therefore, the contained O element causing the B element oxidized is proposed, resulting in the formation of the nanoparticles. Our work indicates that in the B-DLC film a significant amount of the doped B element exists as boron suboxide nanoparticles.

  3. Study on depth profiles of hydrogen in boron-doped diamond films by elastic recoil detection analysis

    SciTech Connect

    Changgeng, Liao; Shengsheng, Yang; Ximeng, Chen; Yongqiang, Wang

    1999-06-10

    Depth profiles of hydrogen in a set of boron-doped diamond films were studied by a convolution method to simulate the recoil proton spectra induced by {sup 4}He ions of 3 MeV. Results show that the hydrogen depth profiles in these varying-level boron-doped diamond films exhibit a similar three-layer structure: the surface absorption layer, the diffusion region, and the uniform hydrogen-containing matrix. Hydrogen concentrations at all the layers, especially in the surface layer, are found to increase significantly with the boron-doping concentration, implying that more dangling-bonds and/or CH-bonds were introduced by the boron-doping process. While the increased dangling-bonds and/or CH-bonds degrade the microstructure of the diamond films as observed by Raman Shift, the boron-doping significantly reduces the specific resistance and makes semiconducting diamond films possible. Hydrogen mobility (or hydrogen loss) in these films as a result of the {sup 4}He beam irradiation was also observed and discussed.

  4. Boron-doped diamond nano/microelectrodes for bio-sensing and in vitro measurements

    PubMed Central

    Dong, Hua; Wang, Shihua; Galligan, James J.; Swain, Greg M.

    2015-01-01

    Since the fabrication of the first diamond electrode in the mid 1980s, repid progress has been made on the development and application of this new type of electrode material. Boron-doped diamond (BDD) electrodes exhibit outstanding properties compared to oxygen-containing sp2 carbon electrodes. These properties make BDD electrodes an ideal choice for use in complex samples. In recent years, BDD microelectrodes have been applied to in vitro and in vivo measurements of biological molecules in animals, tissues and cells. This review will summarize recent progress in the development and applications of BDD electrodes in bio-sensing and in vitro measurements of biomolecules. In the first section, the methods for BDD nanocrystalline diamond film deposition and BDD microelectrodes preparation are described. This is followed by a description and discussion of several approaches for characterization of the BDD electrode surface structure, morphology, and electrochemical activity. Further, application of BDD microelectrodes for use in the in vitro analysis of norepinephrine (NE), serotonin (5-HT), nitric oxide (NO), histamine, and adenosine from tissues are summarized and finally some of the remaining challenges are discussed. PMID:21196394

  5. Ferromagnetic ordering of Cr and Fe doped p-type diamond: An ab initio study

    SciTech Connect

    Benecha, E. M.; Lombardi, E. B.

    2014-02-21

    Ferromagnetic ordering of transition metal dopants in semiconductors holds the prospect of combining the capabilities of semiconductors and magnetic systems in single hybrid devices for spintronic applications. Various semiconductors have so far been considered for spintronic applications, but low Curie temperatures have hindered room temperature applications. We report ab initio DFT calculations on the stability and magnetic properties of Fe and Cr impurities in diamond, and show that their ground state magnetic ordering and stabilization energies depend strongly on the charge state and type of co-doping. We predict that divacancy Cr{sup +2} and substitutional Fe{sup +1} order ferromagnetically in p-type diamond, with magnetic stabilization energies (and magnetic moment per impurity ion) of 16.9 meV (2.5 μ{sub B}) and 33.3 meV (1.0 μ{sub B}), respectively. These magnetic stabilization energies are much larger than what has been achieved in other semiconductors at comparable impurity concentrations, including the archetypal dilute magnetic semiconductor GaAs:Mn. In addition, substitutional Fe{sup +1} exhibits a strong half-metallic character, with the Fermi level crossing bands in only the spin down channel. These results, combined with diamond’s extreme properties, demonstrate that Cr or Fe dopedp-type diamond may successfully be considered in the search for room temperature spintronic materials.

  6. Electrochemical detection of arsenic(III) using iridium-implanted boron-doped diamond electrodes.

    PubMed

    Ivandini, Tribidasari A; Sato, Rika; Makide, Yoshihiro; Fujishima, Akira; Einaga, Yasuaki

    2006-09-15

    Iridium-modified, boron-doped diamond electrodes fabricated by an ion implantation method have been developed for electrochemical detection of arsenite (As(III)). Ir+ ions were implanted with an energy of 800 keV and a dose of 10(15) ion cm(-2). An annealing treatment at 850 degrees C for 45 min in H2 plasma (80 Torr) was required to rearrange metastable diamond produced by an implantation process. Characterization was investigated by SEM, AFM, Raman, and X-ray photoelectron spectroscopy. Cyclic voltammetry and flow injection analysis with amperometric detection were used to study the electrochemical reaction. The electrodes exhibited high catalytic activity toward As(III) oxidation with the detection limit (S/N = 3), sensitivity, and linearity of 20 nM (1.5 ppb), 93 nA microM(-1) cm(-2), and 0.999, respectively. The precision for 10 replicate determinations of 50 microM As(III) was 4.56% relative standard deviation. The advantageous properties of the electrodes were its inherent stability with a very low background current. The electrode was applicable for analysis of spiked arsenic in tap water containing a significant amount of various ion elements. The results indicate that the metal-implanted method could be promising for controlling the electrochemical properties of diamond electrodes.

  7. Fluorine doping into diamond-like carbon coatings inhibits protein adsorption and platelet activation.

    PubMed

    Hasebe, Terumitsu; Yohena, Satoshi; Kamijo, Aki; Okazaki, Yuko; Hotta, Atsushi; Takahashi, Koki; Suzuki, Tetsuya

    2007-12-15

    The first major event when a medical device comes in contact with blood is the adsorption of plasma proteins. Protein adsorption on the material surface leads to the activation of the blood coagulation cascade and the inflammatory process, which impair the lifetime of the material. Various efforts have been made to minimize protein adsorption and platelet adhesion. Recently, diamond-like carbon (DLC) has received much attention because of their antithrombogenicity. We recently reported that coating silicon substrates with fluorine-doped diamond-like carbon (F-DLC) drastically suppresses platelet adhesion and activation. Here, we evaluated the protein adsorption on the material surfaces and clarified the relationship between protein adsorption and platelet behaviors, using polycarbonate and DLC- or F-DLC-coated polycarbonate. The adsorption of albumin and fibrinogen were assessed using a colorimetric protein assay, and platelet adhesion and activation were examined using a differential interference contrast microscope. A higher ratio of albumin to fibrinogen adsorption was observed on F-DLC than on DLC and polycarbonate films, indicating that the F-DLC film should prevent thrombus formation. Platelet adhesion and activation on the F-DLC films were more strongly suppressed as the amount of fluorine doping was increased. These results show that the F-DLC coating may be useful for blood-contacting devices.

  8. Development of neuraminidase detection using gold nanoparticles boron-doped diamond electrodes.

    PubMed

    Wahyuni, Wulan T; Ivandini, Tribidasari A; Saepudin, Endang; Einaga, Yasuaki

    2016-03-15

    Gold nanoparticles-modified boron-doped diamond (AuNPs-BDD) electrodes, which were prepared with a self-assembly deposition of AuNPs at amine-terminated boron-doped diamond, were examined for voltammetric detection of neuraminidase (NA). The detection method was performed based on the difference of electrochemical responses of zanamivir at gold surface before and after the reaction with NA in phosphate buffer solution (PBS, pH 5.5). A linear calibration curve for zanamivir in 0.1 M PBS in the absence of NA was achieved in the concentration range of 1 × 10(-6) to 1 × 10(-5) M (R(2) = 0.99) with an estimated limit of detection (LOD) of 2.29 × 10(-6) M. Furthermore, using its reaction with 1.00 × 10(-5) M zanamivir, a linear calibration curve of NA can be obtained in the concentration range of 0-12 mU (R(2) = 0.99) with an estimated LOD of 0.12 mU. High reproducibility was shown with a relative standard deviation (RSD) of 1.14% (n = 30). These performances could be maintained when the detection was performed in mucin matrix. Comparison performed using gold-modified BDD (Au-BDD) electrodes suggested that the good performance of the detection method is due to the stability of the gold particles position at the BDD surface.

  9. Stratigraphy of a diamond epitaxial three-dimensional overgrowth using doping superlattices

    NASA Astrophysics Data System (ADS)

    Lloret, F.; Fiori, A.; Araujo, D.; Eon, D.; Villar, M. P.; Bustarret, E.

    2016-05-01

    The selective doped overgrowth of 3D mesa patterns and trenches has become an essential fabrication step of advanced monolithic diamond-based power devices. The methodology here proposed combines the overgrowth of plasma-etched cylindrical mesa structures with the sequential growth of doping superlattices. The latter involve thin heavily boron doped epilayers separating thicker undoped epilayers in a periodic fashion. Besides the classical shape analysis under the scanning electron microscope relying on the appearance of facets corresponding to the main crystallographic directions and their evolution toward slow growing facets, the doping superlattices were used as markers in oriented cross-sectional lamellas prepared by focused ion beam and observed by transmission electron microscopy. This stratigraphic approach is shown here to be applicable to overgrown structures where faceting was not detectable. Intermediate growth directions were detected at different times of the growth process and the periodicity of the superlattice allowed to calculate the growth rates and parameters, providing an original insight into the planarization mechanism. Different configurations of the growth front were obtained for different sample orientations, illustrating the anisotropy of the 3D growth. Dislocations were also observed along the lateral growth fronts with two types of Burger vector: b 01 1 ¯ = /1 2 [ 01 1 ¯ ] and b 112 = /1 6 [ 112 ] . Moreover, the clustering of these extended defects in specific regions of the overgrowth prompted a proposal of two different dislocation generation mechanisms.

  10. Doped GaN nanowires on diamond: Structural properties and charge carrier distribution

    NASA Astrophysics Data System (ADS)

    Schuster, Fabian; Winnerl, Andrea; Weiszer, Saskia; Hetzl, Martin; Garrido, Jose A.; Stutzmann, Martin

    2015-01-01

    In this work, we present a detailed study on GaN nanowire doping, which is vital for device fabrication. The nanowires (NWs) are grown by means of molecular beam epitaxy on diamond (111) substrates. Dopant atoms are found to facilitate nucleation, thus an increasing NW density is observed for increasing dopant fluxes. While maintaining nanowire morphology, we demonstrate the incorporation of Si and Mg up to concentrations of 9 × 1020cm-3 and 1 × 1020cm-3 , respectively. The dopant concentration in the nanowire cores is determined by the thermodynamic solubility limit, whereas excess dopants are found to segregate to the nanowire surface. The strain state of the NWs is investigated by X-ray diffraction, which confirms a negligible strain compared to planar thin films. Doping-related emissions are identified in low-temperature photoluminescence spectroscopy and the temperature quenching yields ionization energies of Si donors and Mg acceptors of 17 meV and 167 meV, respectively. At room temperature, luminescence and absorption spectra are found to coincide and the sub-band gap absorption is suppressed in n-type NWs. The charge carrier distribution in doped GaN nanowires is simulated under consideration of surface states at the non-polar side facets. For doping concentrations below 1017cm-3 , the nanowires are depleted of charge carriers, whereas they become highly conductive above 1019cm-3 .

  11. Effect of Polishing on the Friction Behaviors and Cutting Performance of Boron-Doped Diamond Films on WC-Co Inserts

    NASA Astrophysics Data System (ADS)

    Wang, Liang; Shen, Bin; Sun, Fanghong; Zhang, Zhiming

    2014-04-01

    Boron doped (B-doped) diamond films are deposited onto WC-Co inserts by HFCVD with the mixture of acetone, trimethyl borate (C3H9BO3) and H2. The as-deposited B-doped diamond films are characterized with scanning electron microscope (SEM), X-ray diffraction (XRD) spectroscopy, Raman spectroscopy, 3D surface topography based on white-light interferometry and Rockwell hardness tester. The effects of mechanical polishing on the friction behavior and cutting performance of B-doped diamond are evaluated by ball-on-plate type reciprocating tribometer and turning of aluminum alloy 7075 materials, respectively. For comparison, the same tests are also conducted for the bare WC-Co inserts with smooth surface. Friction tests suggest that the unpolished and polished B-doped diamond films possess relatively low fluctuation of friction coefficient than as-received bare WC-Co samples. The average stable friction coefficient for B-doped diamond films decreases apparently after mechanical polishing. The values for WC-Co sample, unpolished and polished B-doped diamond films are approximately 0.38, 0.25 and 0.11, respectively. The cutting results demonstrate that the low friction coefficient and high adhesive strength of B-doped diamond films play an essential role in the cutting performance enhancement of the WC-Co inserts. However, the mechanical polishing process may lower the adhesive strength of B-doped diamond films. Consequently, the polished B-doped diamond coated inserts show premature wear in the machining of adhesive aluminum alloy materials.

  12. Cathodic reductive coupling of methyl cinnamate on boron-doped diamond electrodes and synthesis of new neolignan-type products.

    PubMed

    Kojima, Taiki; Obata, Rika; Saito, Tsuyoshi; Einaga, Yasuaki; Nishiyama, Shigeru

    2015-01-01

    The electroreduction reaction of methyl cinnamate on a boron-doped diamond (BDD) electrode was investigated. The hydrodimer, dimethyl 3,4-diphenylhexanedioate (racemate/meso = 74:26), was obtained in 85% yield as the major product, along with small amounts of cyclic methyl 5-oxo-2,3-diphenylcyclopentane-1-carboxylate. Two new neolignan-type products were synthesized from the hydrodimer.

  13. Lead detection using micro/nanocrystalline boron-doped diamond by square-wave anodic stripping voltammetry.

    PubMed

    Arantes, Tatiane M; Sardinha, André; Baldan, Mauricio R; Cristovan, Fernando H; Ferreira, Neidenei G

    2014-10-01

    Monitoring heavy metal ion levels in water is essential for human health and safety. Electroanalytical techniques have presented important features to detect toxic trace heavy metals in the environment due to their high sensitivity associated with their easy operational procedures. Square-wave voltammetry is a powerful electrochemical technique that may be applied to both electrokinetic and analytical measurements, and the analysis of the characteristic parameters of this technique also enables the mechanism and kinetic evaluation of the electrochemical process under study. In this work, we present a complete optimized study on the heavy metal detection using diamond electrodes. It was analyzed the influence of the morphology characteristics as well as the doping level on micro/nanocrystalline boron-doped diamond films by means of square-wave anodic stripping voltammetry (SWASV) technique. The SWASV parameters were optimized for all films, considering that their kinetic response is dependent on the morphology and/or doping level. The films presented reversible results for the Lead [Pb (II)] system studied. The Pb (II) analysis was performed in ammonium acetate buffer at pH 4.5, varying the lead concentration in the range from 1 to 10 μg L(-1). The analytical responses were obtained for the four electrodes. However, the best low limit detection and reproducibility was found for boron doped nanocrystalline diamond electrodes (BDND) doped with 2000 mg L(-1) in B/C ratio.

  14. The formation of new phase and chemical bonds in N-doped diamond films induced by swift heavy ion irradiation

    NASA Astrophysics Data System (ADS)

    Wang, Z. G.; Zhao, Z. M.; Song, Y.; Liu, J.; Sun, Y. M.; Zhang, C. H.; Duan, J. L.; Jin, Y. F.

    2004-06-01

    In this paper, the formation of the new phase and chemical bonds in N-doped diamond films after swift heavy ion irradiations was studied. The original samples were diamond films grown on (1 1 1) oriented p-Si by CVD deposition. These samples were implanted with 100 keV N-ions at room temperature to 5 × 10 17, 1 × 10 18 and 5 × 10 18 N/cm 2, irradiated with 345 MeV Xe or 2.64 GeV U ions, and then analyzed by means of RBS, micro-FTIR, micro-Raman and XRD spectroscopy. The obtained results suggested that N-sp 2C and N-sp 3C bonds formed in all N-doped diamond films, CN bond exists in all 5 × 10 18 N/cm 2 doped samples but could not form in the 5 × 10 17 N/cm 2 doped samples. In the 1 × 10 18 N/cm 2 doped sample, CN bond could form only after swift heavy ion irradiation. Intense energy deposition from the incident swift heavy ions induces the increase of sp 3/sp 2 bonding ratio and thus enhances the formation of N-sp 3C bonds in the samples. Furthermore, the X-ray diffraction analysis indicated that there existed new phases, α- and β-C 3N 4 in the N-doped diamond samples after irradiation by swift heavy ions.

  15. Simultaneous detection of iodine and iodide on boron doped diamond electrodes.

    PubMed

    Fierro, Stéphane; Comninellis, Christos; Einaga, Yasuaki

    2013-01-15

    Individual and simultaneous electrochemical detection of iodide and iodine has been performed via cyclic voltammetry on boron doped diamond (BDD) electrodes in a 1M NaClO(4) (pH 8) solution, representative of typical environmental water conditions. It is feasible to compute accurate calibration curve for both compounds using cyclic voltammetry measurements by determining the peak current intensities as a function of the concentration. A lower detection limit of about 20 μM was obtained for iodide and 10 μM for iodine. Based on the comparison between the peak current intensities reported during the oxidation of KI, it is probable that iodide (I(-)) is first oxidized in a single step to yield iodine (I(2)). The latter is further oxidized to obtain IO(3)(-). This technique, however, did not allow for a reasonably accurate detection of iodate (IO(3)(-)) on a BDD electrode.

  16. Boron-doped diamond electrode: Preparation, characterization and application for electrocatalytic degradation of m-dinitrobenzene.

    PubMed

    Bai, Hongmei; He, Ping; Pan, Jing; Chen, Jingchao; Chen, Yang; Dong, Faqing; Li, Hong

    2017-07-01

    Boron-doped diamond (BDD) electrode was successfully prepared via microwave plasma chemical vapor deposition method and it was used in electrocatalytic degradation of m-dinitrobenzene (m-DNB). The electrocatalytic degradation efficiency of m-DNB was evaluated under different experimental parameters including current density, temperature, pH, Na2SO4 concentration and initial m-DNB concentration. Under optimal parameters, degradation efficiency of m-DNB reached up to 82.7% after 150min. The degradation process of m-DNB was fitted well with pseudo first-order kinetics. Moreover, UV and HPLC analyses implied that m-DNB was totally destroyed and mineralized after 240min degradation, and the proposed mechanism during the electrocatalytic degradation process was analyzed. All these results demonstrated that BDD electrode possessed excellent electrocatalytic property and showed a great potential application in wastewater treatment.

  17. Boron Doped Diamond Paste Electrodes for Microfluidic Paper-Based Analytical Devices.

    PubMed

    Nantaphol, Siriwan; Channon, Robert B; Kondo, Takeshi; Siangproh, Weena; Chailapakul, Orawon; Henry, Charles S

    2017-04-04

    Boron doped diamond (BDD) electrodes have exemplary electrochemical properties; however, widespread use of high-quality BDD has previously been limited by material cost and availability. In the present article, we report the use of a BDD paste electrode (BDDPE) coupled with microfluidic paper-based analytical devices (μPADs) to create a low-cost, high-performance electrochemical sensor. The BDDPEs are easy to prepare from a mixture of BDD powder and mineral oil and can be easily stencil-printed into a variety of electrode geometries. We demonstrate the utility and applicability of BDDPEs through measurements of biological species (norepinephrine and serotonin) and heavy metals (Pb and Cd) using μPADs. Compared to traditional carbon paste electrodes (CPE), BDDPEs exhibit a wider potential window, lower capacitive current, and are able to circumvent the fouling of serotonin. These results demonstrate the capability of BDDPEs as point-of-care sensors when coupled with μPADs.

  18. Chemical Modification of Boron-Doped Diamond Electrodes for Applications to Biosensors and Biosensing.

    PubMed

    Svítková, Jana; Ignat, Teodora; Švorc, Ľubomír; Labuda, Ján; Barek, Jiří

    2016-05-03

    Boron-doped diamond (BDD) is a prospective electrode material that possesses many exceptional properties including wide potential window, low noise, low and stable background current, chemical and mechanical stability, good biocompatibility, and last but not least exceptional resistance to passivation. These characteristics extend its usability in various areas of electrochemistry as evidenced by increasing number of published articles over the past two decades. The idea of chemically modifying BDD electrodes with molecular species attached to the surface for the purpose of creating a rational design has found promising applications in the past few years. BDD electrodes have appeared to be excellent substrate materials for various chemical modifications and subsequent application to biosensors and biosensing. Hence, this article presents modification strategies that have extended applications of BDD electrodes in electroanalytical chemistry. Different methods and steps of surface modification of this electrode material for biosensing and construction of biosensors are discussed.

  19. In vivo assessment of cancerous tumors using boron doped diamond microelectrode

    NASA Astrophysics Data System (ADS)

    Fierro, Stéphane; Yoshikawa, Momoko; Nagano, Osamu; Yoshimi, Kenji; Saya, Hideyuki; Einaga, Yasuaki

    2012-11-01

    The in vitro and in vivo electrochemical detection of the reduced form of glutathione (L-γ-glutamyl-L-cysteinyl-glycine, GSH) using boron doped diamond (BDD) microelectrode for potential application in the assessment of cancerous tumors is presented. Accurate calibration curve for the determination of GSH could be obtained by the in vitro electrochemical measurements. Additionally, it was shown that it was possible to separate the detection of GSH from the oxidized form of glutathione (GSSG) using chronoamperometry measurements. In vivo GSH detection measurements have been performed in human cancer cells inoculated in immunodeficient mice. These measurements have shown that the difference of GSH level between cancerous and normal tissues can be detected. Moreover, GSH detection measurements carried out before and after X-ray irradiation have proved that it is possible to assess in vivo the decrease in GSH concentration in the tumor after a specific treatment.

  20. Boron-Doped Nanocrystalline Diamond Electrodes for Neural Interfaces: In vivo Biocompatibility Evaluation

    PubMed Central

    Alcaide, María; Taylor, Andrew; Fjorback, Morten; Zachar, Vladimir; Pennisi, Cristian P.

    2016-01-01

    Boron-doped nanocrystalline diamond (BDD) electrodes have recently attracted attention as materials for neural electrodes due to their superior physical and electrochemical properties, however their biocompatibility remains largely unexplored. In this work, we aim to investigate the in vivo biocompatibility of BDD electrodes in relation to conventional titanium nitride (TiN) electrodes using a rat subcutaneous implantation model. High quality BDD films were synthesized on electrodes intended for use as an implantable neurostimulation device. After implantation for 2 and 4 weeks, tissue sections adjacent to the electrodes were obtained for histological analysis. Both types of implants were contained in a thin fibrous encapsulation layer, the thickness of which decreased with time. Although the level of neovascularization around the implants was similar, BDD electrodes elicited significantly thinner fibrous capsules and a milder inflammatory reaction at both time points. These results suggest that BDD films may constitute an appropriate material to support stable performance of implantable neural electrodes over time. PMID:27013949

  1. Boron-Doped Nanocrystalline Diamond Electrodes for Neural Interfaces: In vivo Biocompatibility Evaluation.

    PubMed

    Alcaide, María; Taylor, Andrew; Fjorback, Morten; Zachar, Vladimir; Pennisi, Cristian P

    2016-01-01

    Boron-doped nanocrystalline diamond (BDD) electrodes have recently attracted attention as materials for neural electrodes due to their superior physical and electrochemical properties, however their biocompatibility remains largely unexplored. In this work, we aim to investigate the in vivo biocompatibility of BDD electrodes in relation to conventional titanium nitride (TiN) electrodes using a rat subcutaneous implantation model. High quality BDD films were synthesized on electrodes intended for use as an implantable neurostimulation device. After implantation for 2 and 4 weeks, tissue sections adjacent to the electrodes were obtained for histological analysis. Both types of implants were contained in a thin fibrous encapsulation layer, the thickness of which decreased with time. Although the level of neovascularization around the implants was similar, BDD electrodes elicited significantly thinner fibrous capsules and a milder inflammatory reaction at both time points. These results suggest that BDD films may constitute an appropriate material to support stable performance of implantable neural electrodes over time.

  2. Multichannel Boron Doped Nanocrystalline Diamond Ultramicroelectrode Arrays: Design, Fabrication and Characterization

    PubMed Central

    Kiran, Raphael; Rousseau, Lionel; Lissorgues, Gaëlle; Scorsone, Emmanuel; Bongrain, Alexandre; Yvert, Blaise; Picaud, Serge; Mailley, Pascal; Bergonzo, Philippe

    2012-01-01

    We report on the fabrication and characterization of an 8 × 8 multichannel Boron Doped Diamond (BDD) ultramicro-electrode array (UMEA). The device combines both the assets of microelectrodes, resulting from conditions in mass transport from the bulk solution toward the electrode, and of BDD's remarkable intrinsic electrochemical properties. The UMEAs were fabricated using an original approach relying on the selective growth of diamond over pre-processed 4 inches silicon substrates. The prepared UMEAs were characterized by cyclic voltammetry (CV) and electrochemical impedance spectroscopy (EIS). The results demonstrated that the electrodes have exhibited a very fast electrode transfer rate (k0) up to 0.05 cm·s−1 (in a fast redox couple) and on average, a steady state limiting current (in a 0.5 M potassium chloride aqueous solution containing 1 mM Fe(CN)64− ion at 100 mV·s−1) of 1.8 nA. The UMEAs are targeted for electrophysiological as well as analytical applications. PMID:22969367

  3. Simultaneous hydrogen production and electrochemical oxidation of organics using boron-doped diamond electrodes.

    PubMed

    Jiang, Juyuan; Chang, Ming; Pan, Peng

    2008-04-15

    This paper presents advantages of using a boron-doped diamond (BDD) electrode for hydrogen production and wastewater treatment in a single electrochemical cell. Results indicated that the BDD electrode possessed the widest known electrochemical window, allowing new possibilities for both anodic and cathodic reactions to simultaneously take place. The BDD electrode exhibited high anodic potential, generating high oxidation state radicals that facilitated oxidation of toxic waste organic compounds such as 4-nitrophenols. In contrast, because of widening of potential windows, the rate of hydrogen evolution at the cathode was significantly increased. Time-on-stream concentrations of reaction intermediates were monitored to elucidate mechanism involved in 4-nitrophenol oxidation. Spalling, fouling, or reduction in the thickness of thin-film diamond coating was not observed. Overall, the BDD electrode exhibits unique properties including chemical inertness, anticorrosion, and extended service life. These properties are especially important in wastewater treatment. Economic advantages were attributed to the low cost and long duration BDD electrode and the valuable hydrogen byproduct produced. Analysis has shown that technology associated with the BDD electrode could be effectively implemented with minimum energy input and capital requirements. When combined with solar energy and fuel cells, electrochemical wastewater processing can become energy efficient and cost-effective.

  4. Doped GaN nanowires on diamond: Structural properties and charge carrier distribution

    SciTech Connect

    Schuster, Fabian Winnerl, Andrea; Weiszer, Saskia; Hetzl, Martin; Garrido, Jose A.; Stutzmann, Martin

    2015-01-28

    In this work, we present a detailed study on GaN nanowire doping, which is vital for device fabrication. The nanowires (NWs) are grown by means of molecular beam epitaxy on diamond (111) substrates. Dopant atoms are found to facilitate nucleation, thus an increasing NW density is observed for increasing dopant fluxes. While maintaining nanowire morphology, we demonstrate the incorporation of Si and Mg up to concentrations of 9× 10{sup 20}cm{sup −3} and 1 × 10{sup 20}cm{sup −3}, respectively. The dopant concentration in the nanowire cores is determined by the thermodynamic solubility limit, whereas excess dopants are found to segregate to the nanowire surface. The strain state of the NWs is investigated by X-ray diffraction, which confirms a negligible strain compared to planar thin films. Doping-related emissions are identified in low-temperature photoluminescence spectroscopy and the temperature quenching yields ionization energies of Si donors and Mg acceptors of 17 meV and 167 meV, respectively. At room temperature, luminescence and absorption spectra are found to coincide and the sub-band gap absorption is suppressed in n-type NWs. The charge carrier distribution in doped GaN nanowires is simulated under consideration of surface states at the non-polar side facets. For doping concentrations below 10{sup 17}cm{sup −3}, the nanowires are depleted of charge carriers, whereas they become highly conductive above 10{sup 19}cm{sup −3}.

  5. Local impedance imaging of boron-doped polycrystalline diamond thin films

    SciTech Connect

    Zieliński, A.; Ryl, J.; Burczyk, L.; Darowicki, K.

    2014-09-29

    Local impedance imaging (LII) was used to visualise surficial deviations of AC impedances in polycrystalline boron-doped diamond (BDD). The BDD thin film electrodes were deposited onto the highly doped silicon substrates via microwave plasma-enhanced CVD. The studied boron dopant concentrations, controlled by the [B]/[C] ratio in plasma, ranged from 1 × 10{sup 16} to 2 × 10{sup 21} atoms cm{sup −3}. The BDD films displayed microcrystalline structure, while the average size of crystallites decreased from 1 to 0.7 μm with increasing [B]/[C] ratios. The application of LII enabled a direct and high-resolution investigation of local distribution of impedance characteristics within the individual grains of BDD. Such an approach resulted in greater understanding of the microstructural control of properties at the grain level. We propose that the obtained surficial variation of impedance is correlated to the areas of high conductance which have been observed at the grain boundaries by using LII. We also postulate that the origin of high conductivity is due to either preferential boron accumulation, the presence of defects, or sp{sup 2} regions in the intragrain regions. The impedance modulus recorded by LII was in full agreement with the bulk impedance measurements. Both variables showed a decreasing trend with increasing [B]/[C] ratios, which is consistent with higher boron incorporation into BDD film.

  6. Application of nitrogen-doped ultrananocrystalline diamond/hydrogenated amorphous carbon composite films for ultraviolet detection

    NASA Astrophysics Data System (ADS)

    Zkria, Abdelrahman; Gima, Hiroki; Yoshitake, Tsuyoshi

    2017-03-01

    Nitrogen-doped ultrananocrystalline diamond/hydrogenated amorphous carbon (UNCD/a-C:H) films were grown by coaxial arc plasma deposition in the ambient of nitrogen and hydrogen mixed gases. Synthesized films were structurally investigated by X-ray photoemission and near-edge X-ray absorption fine structure spectroscopies. A heterojunction with p-type Si substrate was fabricated to study the ultraviolet photodetection properties of the film. Capacitance-voltage measurements assure the expansion of a depletion region into the film side. Current-voltage curves in the dark showed a good rectifying behaviour in the bias voltages range between ±5 V. Under 254 nm monochromatic light, the heterojunction shows a capability of deep ultraviolet light detection, which can be attribute to the existence of UNCD grains. As the diode was cooled from 300 K down to 150 K, the detectivity has a notable enhancement from 1.94 × 105 cm Hz1/2 W-1 at 300 K to 5.11 × 1010 cm Hz1/2 W-1 at 150 K, which is mainly due to a remarkable reduction in the leakage current at low temperatures. It was experimentally demonstrated that nitrogen-doped UNCD/a-C:H film works as ultraviolet-range photovoltaic material.

  7. Boron concentration profiling by high angle annular dark field-scanning transmission electron microscopy in homoepitaxial δ-doped diamond layers

    SciTech Connect

    Araújo, D.; Alegre, M. P.; Piñero, J. C.; Fiori, A.; Bustarret, E.; Jomard, F.

    2013-07-22

    To develop further diamond related devices, the concentration and spatial location of dopants should be controlled down to the nanometer scale. Scanning transmission electron microscopy using the high angle annular dark field mode is shown to be sensitive to boron doping in diamond epilayers. An analytical procedure is described, whereby local boron concentrations above 10{sup 20} cm{sup −3} were quantitatively derived down to nanometer resolution from the signal dependence on thickness and boron content. Experimental boron local doping profiles measured on diamond p{sup −}/p{sup ++}/p{sup −} multilayers are compared to macroscopic profiles obtained by secondary ion mass spectrometry, avoiding reported artefacts.

  8. Protection of Diamond-like Carbon Films from Energetic Atomic Oxygen Degradation Through Si-doping Technology

    SciTech Connect

    Yokota, Kumiko; Tagawa, Masahito; Kitamura, Akira; Matsumoto, Koji; Yoshigoe, Akitaka; Teraoka, Yuden; Fontaine, Julien; Belin, Michel

    2009-01-05

    The effect of hyperthermal atomic oxygen (AO) exposure on the surface properties of Si-doped diamond-like carbon (DLC) was investigated. Two types of DLC were tested that contain approximately 10 at% and 20 at% of Si atoms. Surface analytical results of high-resolution x-ray photoelectron spectroscopy using synchrotron radiation (synchrotron radiation photoemission spectroscopy; SR-PES) as well as Rutherford backscattering spectroscopy (RBS) have been used for characterization of the AO-exposed Si-doped DLC. It was identified by SR-PES that a SiO{sub 2} layer was formed by the hyperthermal AO exposure at the Si-doped DLC surface. RBS data indicates that AO exposure leads to severe thickness loss on the undopedd DLC. In contrast, a SiO{sub 2} layer formed by the hyperthermal atomic oxygen reaction of Si-doped DLC protects the DLC underneath the SiO{sub 2} layer.

  9. Electrochemical evaluation and determination of antiretroviral drug fosamprenavir using boron-doped diamond and glassy carbon electrodes.

    PubMed

    Gumustas, Mehmet; Ozkan, Sibel A

    2010-05-01

    Fosamprenavir is a pro-drug of the antiretroviral protease inhibitor amprenavir and is oxidizable at solid electrodes. The anodic oxidation behavior of fosamprenavir was investigated using cyclic and linear sweep voltammetry at boron-doped diamond and glassy carbon electrodes. In cyclic voltammetry, depending on pH values, fosamprenavir showed one sharp irreversible oxidation peak or wave depending on the working electrode. The mechanism of the oxidation process was discussed. The voltammetric study of some model compounds allowed elucidation of the possible oxidation mechanism of fosamprenavir. The aim of this study was to determine fosamprenavir levels in pharmaceutical formulations and biological samples by means of electrochemical methods. Using the sharp oxidation response, two voltammetric methods were described for the determination of fosamprenavir by differential pulse and square-wave voltammetry at the boron-doped diamond and glassy carbon electrodes. These two voltammetric techniques are 0.1 M H(2)SO(4) and phosphate buffer at pH 2.0 which allow quantitation over a 4 x 10(-6) to 8 x 10(-5) M range using boron-doped diamond and a 1 x 10(-5) to 1 x 10(-4) M range using glassy carbon electrodes, respectively, in supporting electrolyte. All necessary validation parameters were investigated and calculated. These methods were successfully applied for the analysis of fosamprenavir pharmaceutical dosage forms, human serum and urine samples. The standard addition method was used in biological media using boron-doped diamond electrode. No electroactive interferences from the tablet excipients or endogenous substances from biological material were found. The results were statistically compared with those obtained through an established HPLC-UV technique; no significant differences were found between the voltammetric and HPLC methods.

  10. Feedback-amplified electrochemical dual-plate boron-doped diamond microtrench detector for flow injection analysis.

    PubMed

    Lewis, Grace E M; Gross, Andrew J; Kasprzyk-Hordern, Barbara; Lubben, Anneke T; Marken, Frank

    2015-08-01

    An electrochemical flow cell with a boron-doped diamond dual-plate microtrench electrode has been developed and demonstrated for hydroquinone flow injection electroanalysis in phosphate buffer pH 7. Using the electrochemical generator-collector feedback detector improves the sensitivity by one order of magnitude (when compared to a single working electrode detector). The diffusion process is switched from an analyte consuming "external" process to an analyte regenerating "internal" process with benefits in selectivity and sensitivity.

  11. Kinetics and mechanism of the deep electrochemical oxidation of sodium diclofenac on a boron-doped diamond electrode

    NASA Astrophysics Data System (ADS)

    Vedenyapina, M. D.; Borisova, D. A.; Rosenwinkel, K.-H.; Weichgrebe, D.; Stopp, P.; Vedenyapin, A. A.

    2013-08-01

    The kinetics and mechanism of the deep oxidation of sodium diclofenac on a boron-doped diamond electrode are studied to develop a technique for purifying wastewater from pharmaceutical products. The products of sodium diclofenac electrolysis are analyzed using cyclic voltammetry and nuclear magnetic resonance techniques. It is shown that the toxicity of the drug and products of its electrolysis decreases upon its deep oxidation.

  12. Cathodic reductive coupling of methyl cinnamate on boron-doped diamond electrodes and synthesis of new neolignan-type products

    PubMed Central

    Kojima, Taiki; Obata, Rika; Saito, Tsuyoshi

    2015-01-01

    Summary The electroreduction reaction of methyl cinnamate on a boron-doped diamond (BDD) electrode was investigated. The hydrodimer, dimethyl 3,4-diphenylhexanedioate (racemate/meso = 74:26), was obtained in 85% yield as the major product, along with small amounts of cyclic methyl 5-oxo-2,3-diphenylcyclopentane-1-carboxylate. Two new neolignan-type products were synthesized from the hydrodimer. PMID:25815070

  13. Boron-doped diamond heater and its application to large-volume, high-pressure, and high-temperature experiments.

    PubMed

    Shatskiy, Anton; Yamazaki, Daisuke; Morard, Guillaume; Cooray, Titus; Matsuzaki, Takuya; Higo, Yuji; Funakoshi, Ken-ichi; Sumiya, Hitoshi; Ito, Eiji; Katsura, Tomoo

    2009-02-01

    A temperature of 3500 degrees C was generated using a diamond resistance heater in a large-volume Kawai-type high-pressure apparatus. Re and LaCrO(3) have conventionally been used for heaters in high-pressure studies but they cannot generate temperatures higher than 2900 degrees C and make in situ x-ray observations difficult due to their high x-ray absorption. Using a boron-doped diamond heater overcomes these problems and achieves stable temperature generation for pressure over 10 GPa. The heater starting material is a cold-compressed mixture of graphite with boron used to avoid the manufacturing difficulties due to the extreme hardness of diamond. The diamond heater was synthesized in situ from the boron-graphite mixture at temperature of 1600+/-100 degrees C and pressure of 20 GPa. By using the proposed technique, we have employed the diamond heater for high-temperature generation in a large-volume high-pressure apparatus. Achievement of temperatures above 3000 degrees C allows us to measure the melting points of the important constituents in earth's mantle (MgSiO(3), SiO(2), and Al(2)O(3)) and core (Fe and Ni) at extremely high pressures.

  14. Electroanalytical investigation and determination of pefloxacin in pharmaceuticals and serum at boron-doped diamond and glassy carbon electrodes.

    PubMed

    Uslu, Bengi; Topal, Burcu Dogan; Ozkan, Sibel A

    2008-02-15

    The anodic behavior and determination of pefloxacin on boron-doped diamond and glassy carbon electrodes were investigated using cyclic, linear sweep, differential pulse and square wave voltammetric techniques. In cyclic voltammetry, pefloxacin shows one main irreversible oxidation peak and additional one irreversible ill-defined wave depending on pH values for both electrodes. The results indicate that the process of pefloxacin is irreversible and diffusion controlled on boron-doped diamond electrode and irreversible but adsorption controlled on glassy carbon electrode. The peak current is found to be linear over the range of concentration 2x10(-6) to 2x10(-4)M in 0.5M H(2)SO(4) at about +1.20V (versus Ag/AgCl) for differential pulse and square wave voltammetric technique using boron-doped diamond electrode. The repeatability, reproducibility, precision and accuracy of the methods in all media were investigated. Selectivity, precision and accuracy of the developed methods were also checked by recovery studies. The procedures were successfully applied to the determination of the drug in pharmaceutical dosage forms and humans serum samples with good recovery results. No electroactive interferences from the excipients and endogenous substances were found in the pharmaceutical dosage forms and biological samples, respectively.

  15. Optical and electrical properties of boron doped diamond thin conductive films deposited on fused silica glass substrates

    NASA Astrophysics Data System (ADS)

    Ficek, M.; Sobaszek, M.; Gnyba, M.; Ryl, J.; Gołuński, Ł.; Smietana, M.; Jasiński, J.; Caban, P.; Bogdanowicz, R.

    2016-11-01

    This paper presents boron-doped diamond (BDD) film as a conductive coating for optical and electronic purposes. Seeding and growth processes of thin diamond films on fused silica have been investigated. Growth processes of thin diamond films on fused silica were investigated at various boron doping level and methane admixture. Two step pre-treatment procedure of fused silica substrate was applied to achieve high seeding density. First, the substrates undergo the hydrogen plasma treatment then spin-coating seeding using a dispersion consisting of detonation nanodiamond in dimethyl sulfoxide with polyvinyl alcohol was applied. Such an approach results in seeding density of 2 × 1010 cm-2. The scanning electron microscopy images showed homogenous, continuous and polycrystalline surface morphology with minimal grain size of 200 nm for highly boron doped films. The sp3/sp2 ratio was calculated using Raman spectra deconvolution method. A high refractive index (range of 2.0-2.4 @550 nm) was achieved for BDD films deposited at 500 °C. The values of extinction coefficient were below 0.1 at λ = 550 nm, indicating low absorption of the film. The fabricated BDD thin films displayed resistivity below 48 Ohm cm and transmittance over 60% in the visible wavelength range.

  16. Electrochemical treatment of cork boiling wastewater with a boron-doped diamond anode.

    PubMed

    Fernandes, Annabel; Santos, Diana; Pacheco, Maria José; Ciríaco, Lurdes; Simões, Rogério; Gomes, Arlindo C; Lopes, Ana

    2015-01-01

    Anodic oxidation at a boron-doped diamond anode of cork boiling wastewater was successfully used for mineralization and biodegradability enhancement required for effluent discharge or subsequent biological treatment, respectively. The influence of the applied current density (30-70 mA/cm2) and the background electrolyte concentration (0-1.5 g/L Na2SO4) on the performance of the electrochemical oxidation was investigated. The supporting electrolyte was required to achieve conductivities that enabled anodic oxidation at the highest current intensities applied. The results indicated that pollutant removal increased with the applied current density, and after 8 h, reductions greater than 90% were achieved for COD, dissolved organic carbon, total phenols and colour. The biodegradability enhancement was from 0.13 to 0.59 and from 0.23 to 0.72 for the BOD/COD ratios with BOD of 5 and 20 days' incubation period, respectively. The tests without added electrolyte were performed at lower applied electrical charges (15 mA/cm2 or 30 V) with good organic load removal (up to 80%). For an applied current density of 30 mA/cm2, there was a minimum of electric conductivity of 1.9 mS/cm (corresponding to 0.75 g/L of Na2SO4), which minimized the specific energy consumption.

  17. Electrochemical decolorization of dye wastewater by surface-activated boron-doped nanocrystalline diamond electrode.

    PubMed

    Chen, Chienhung; Nurhayati, Ervin; Juang, Yaju; Huang, Chihpin

    2016-07-01

    Complex organics contained in dye wastewater are difficult to degrade and often require electrochemical advanced oxidation processes (EAOPs) to treat it. Surface activation of the electrode used in such treatment is an important factor determining the success of the process. The performance of boron-doped nanocrystalline diamond (BD-NCD) film electrode for decolorization of Acid Yellow (AY-36) azo dye with respect to the surface activation by electrochemical polarization was studied. Anodic polarization found to be more suitable as electrode pretreatment compared to cathodic one. After anodic polarization, the originally H-terminated surface of BD-NCD was changed into O-terminated, making it more hydrophilic. Due to the oxidation of surface functional groups and some portion of sp(2) carbon in the BD-NCD film during anodic polarization, the electrode was successfully being activated showing lower background current, wider potential window and considerably less surface activity compared to the non-polarized one. Consequently, electrooxidation (EO) capability of the anodically-polarized BD-NCD to degrade AY-36 dye was significantly enhanced, capable of nearly total decolorization and chemical oxygen demand (COD) removal even after several times of re-using. The BD-NCD film electrode favored acidic condition for the dye degradation; and the presence of chloride ion in the solution was found to be more advantageous than sulfate active species.

  18. Continuous and selective measurement of oxytocin and vasopressin using boron-doped diamond electrodes

    NASA Astrophysics Data System (ADS)

    Asai, Kai; Ivandini, Tribidasari A.; Einaga, Yasuaki

    2016-09-01

    The electrochemical detection of oxytocin using boron-doped diamond (BDD) electrodes was studied. Cyclic voltammetry of oxytocin in a phosphate buffer solution exhibits an oxidation peak at +0.7 V (vs. Ag/AgCl), which is attributable to oxidation of the phenolic group in the tyrosyl moiety. Furthermore, the linearity of the current peaks obtained in flow injection analysis (FIA) using BDD microelectrodes over the oxytocin concentration range from 0.1 to 10.0 μM with a detection limit of 50 nM (S/N = 3) was high (R2 = 0.995). Although the voltammograms of oxytocin and vasopressin observed with an as-deposited BDD electrode, as well as with a cathodically-reduced BDD electrode, were similar, a clear distinction was observed with anodically-oxidized BDD electrodes due to the attractive interaction between vasopressin and the oxidized BDD surface. By means of this distinction, selective measurements using chronoamperometry combined with flow injection analysis at an optimized potential were demonstrated, indicating the possibility of making selective in situ or in vivo measurements of oxytocin.

  19. Anodic voltammetry of zolmitriptan at boron-doped diamond electrode and its analytical applications.

    PubMed

    Uslu, B; Canbaz, D

    2010-04-01

    The electrooxidative behavior and determination of zolmitriptan at a boron-doped diamond electrode were investigated using cyclic, linear sweep, differential pulse and square wave voltammetric techniques. Zolmitriptan undergoes irreversible oxidation at a peak potential of about +0.9 V (vs Ag/AgCl/3 M KCl). DPV and SWV techniques are proposed for the determination of zolmitriptan in phosphate buffer at pH 3.03, which allows quantitation over the two different ranges (8 x 10(-7) - 8 x 10(-6) M and 1 x 10(-5) - 1 x 10(-4) M) in supporting electrolyte for both methods. A linear response was obtained in phosphate buffer over two different ranges (6 x 10(-7) - 8 x 10(-6) M and 1 x 10(-5) - 1 x 10(-4) M) for spiked serum samples at pH 3.03 for both techniques. The repeatability and reproducibility of the methods for all media were determined. The standard addition method was used in serum. Precision and accuracy were also checked in all media. No electroactive interferences from the excipients and endegenous substances were found in the pharmaceutical dosage form and the biological sample, respectively.

  20. Electrochemical oxidation of N-nitrosodimethylamine with boron-doped diamond film electrodes.

    PubMed

    Chaplin, Brian P; Schrader, Glenn; Farrell, James

    2009-11-01

    This research investigated NDMA oxidation by boron-doped diamond (BDD) film electrodes. Oxidation rates were measured as a function of electrode potential, current density, and temperature using rotating disk and flow-through reactors. Final NDMA reaction products were carbon dioxide, ammonium, and nitrate, with dimethylamine and methylamine as intermediate products. Reaction rates were first-order with respect to NDMA concentration and surface area normalized oxidation rates as high as 850 +/- 50 L/m(2)-hr were observed at a current density of 10 mA/cm(2). The flow-through reactor yielded mass transfer limited reaction rates that were first-order in NDMA concentration, with a half-life of 2.1 +/- 0.1 min. Experimental evidence indicates that NDMA oxidation proceeds via a direct electron transfer at potentials >1.8 V/SHE with a measured apparent activation energy of 3.1 +/- 0.5 kJ/mol at a potential of 2.5 V/SHE. Density functional theory calculations indicate that a direct two-electron transfer can produce a stable NDMA((+2)) species that is stabilized by forming an adduct with water. The transfer of two electrons from NDMA to the electrode allows an activation-less attack of hydroxyl radicals on the NDMA((+2)) water adduct. At higher overpotentials the oxidation of NDMA occurs by a combination of direct electron transfer and hydroxyl radicals produced via water electrolysis.

  1. Boron-doped diamond semiconductor electrodes: Efficient photoelectrochemical CO2 reduction through surface modification

    NASA Astrophysics Data System (ADS)

    Roy, Nitish; Hirano, Yuiri; Kuriyama, Haruo; Sudhagar, Pitchaimuthu; Suzuki, Norihiro; Katsumata, Ken-Ichi; Nakata, Kazuya; Kondo, Takeshi; Yuasa, Makoto; Serizawa, Izumi; Takayama, Tomoaki; Kudo, Akihiko; Fujishima, Akira; Terashima, Chiaki

    2016-11-01

    Competitive hydrogen evolution and multiple proton-coupled electron transfer reactions limit photoelectrochemical CO2 reduction in aqueous electrolyte. Here, oxygen-terminated lightly boron-doped diamond (BDDL) thin films were synthesized as a semiconductor electron source to accelerate CO2 reduction. However, BDDL alone could not stabilize the intermediates of CO2 reduction, yielding a negligible amount of reduction products. Silver nanoparticles were then deposited on BDDL because of their selective electrochemical CO2 reduction ability. Excellent selectivity (estimated CO:H2 mass ratio of 318:1) and recyclability (stable for five cycles of 3 h each) for photoelectrochemical CO2 reduction were obtained for the optimum silver nanoparticle-modified BDDL electrode at ‑1.1 V vs. RHE under 222-nm irradiation. The high efficiency and stability of this catalyst are ascribed to the in situ photoactivation of the BDDL surface during the photoelectrochemical reaction. The present work reveals the potential of BDDL as a high-energy electron source for use with co-catalysts in photochemical conversion.

  2. Electrochemical Detection of Peroxynitrite using Hemin-PEDOT Functionalized Boron-Doped Diamond Microelectrode

    PubMed Central

    Peteu, Serban F.; Whitman, Brandon; Galligan, James J.; Swain, Greg M.

    2016-01-01

    Peroxynitrite is a potent nitroxidation agent and highly reactive metabolite, clinically correlated with a rich pathophysiology. Its sensitive and selective detection is challenging due to its high reactivity and short sub-second lifetime. Boron-doped diamond (BDD) microelectrodes have attracted interest because of their outstanding electroanalytical properties that include a wide working potential window and enhanced signal-to-noise ratio. Herein, we report on the modification of a BDD microelectrode with an electro-polymerized film of hemin and polyethylenedioxythiophene (PEDOT) for the purpose of selectively quantifying peroxynitrite. The nanostructured modified polymer layer was characterized by Raman spectroscopy and scanning electron microscopy (SEM). The electrochemical response to peroxynitrite was studied by voltammetry and time-based amperometry. The measured detection limit was 10 ± 0.5 nM (S/N=3), the sensitivity was 4.5 ± 0.5 nA/nM and the response time was 3.5 ± 1 s. The hemin-PEDOT BDD sensors exhibited a response variability of 5% or less (RSD). The stability of the sensors after a 20-day storage in 0.1 M PB (pH 7.4) at 4 °C was excellent as at least 93% of the initial response to 50 nM PON was maintained. The presence of PEDOT was correlated with a sensitivity increase. PMID:26862713

  3. Electrochemical oxidation and electroanalytical determination of xylitol at a boron-doped diamond electrode.

    PubMed

    Lourenço, Anabel S; Sanches, Fátima A C; Magalhães, Renata R; Costa, Daniel J E; Ribeiro, Williame F; Bichinho, Kátia M; Salazar-Banda, Giancarlo R; Araújo, Mário C U

    2014-02-01

    Xylitol is a reduced sugar with anticariogenic properties used by insulin-dependent diabetics, and which has attracted great attention of the pharmaceutical, cosmetics, food and dental industries. The detection of xylitol in different matrices is generally based on separation techniques. Alternatively, in this paper, the application of a boron-doped diamond (BDD) electrode allied to differing voltammetric techniques is presented to study the electrochemical behavior of xylitol, and to develop an analytical methodology for its determination in mouthwash. Xylitol undergoes two oxidation steps in an irreversible diffusion-controlled process (D=5.05 × 10(-5)cm(2)s(-1)). Differential pulse voltammetry studies revealed that the oxidation mechanism for peaks P1 (3.4 ≤ pH ≤ 8.0), and P2 (6.0 ≤ pH ≤ 9.0) involves transfer of 1H(+)/1e(-), and 1e(-) alone, respectively. The oxidation process P1 is mediated by the (•)OH generated at the BDD hydrogen-terminated surface. The maximum peak current was obtained at a pH of 7.0, and the electroanalytical method developed, (employing square wave voltammetry) yielded low detection (1.3 × 10(-6) mol L(-1)), and quantification (4.5 × 10(-6) mol L(-1)) limits, associated with good levels of repeatability (4.7%), and reproducibility (5.3%); thus demonstrating the viability of the methodology for detection of xylitol in biological samples containing low concentrations.

  4. Bioelectrochemical degradation of urea at platinized boron doped diamond electrodes for bioregenerative systems

    NASA Astrophysics Data System (ADS)

    Nicolau, Eduardo; González-González, Ileana; Flynn, Michael; Griebenow, Kai; Cabrera, Carlos R.

    2009-10-01

    The recovery of potable water from space mission wastewater is critical for the life support and environmental health of crew members in long-term missions. NASA estimates reveal that at manned space missions 1.91 kg/person day of urine is produced, with urea and various salts as its main components. In this research we explore the utilization of urease (EC 3.5.1.5, 15,000 U/g) along with a platinized boron doped diamond electrode (Pt-BDD) to degrade urea. Urea is directly degraded to nitrogen by the in situ utilization of the reaction products as a strategy to increase the amount of clean water in future space expeditions. The biochemical reaction of urease produces ammonia and carbon dioxide from urea. Thereafter, ammonia is electrooxidized at the interface of the Pt-BDD producing molecular nitrogen. The herein presented system has been proven to have 20% urea conversion efficiency. This research has potential applications for future long-term space missions since the reaction byproducts could be used for a biomass subsystem (in situ resource recovery), while generating electricity from the same process.

  5. Boron-doped diamond semiconductor electrodes: Efficient photoelectrochemical CO2 reduction through surface modification

    PubMed Central

    Roy, Nitish; Hirano, Yuiri; Kuriyama, Haruo; Sudhagar, Pitchaimuthu; Suzuki, Norihiro; Katsumata, Ken-ichi; Nakata, Kazuya; Kondo, Takeshi; Yuasa, Makoto; Serizawa, Izumi; Takayama, Tomoaki; Kudo, Akihiko; Fujishima, Akira; Terashima, Chiaki

    2016-01-01

    Competitive hydrogen evolution and multiple proton-coupled electron transfer reactions limit photoelectrochemical CO2 reduction in aqueous electrolyte. Here, oxygen-terminated lightly boron-doped diamond (BDDL) thin films were synthesized as a semiconductor electron source to accelerate CO2 reduction. However, BDDL alone could not stabilize the intermediates of CO2 reduction, yielding a negligible amount of reduction products. Silver nanoparticles were then deposited on BDDL because of their selective electrochemical CO2 reduction ability. Excellent selectivity (estimated CO:H2 mass ratio of 318:1) and recyclability (stable for five cycles of 3 h each) for photoelectrochemical CO2 reduction were obtained for the optimum silver nanoparticle-modified BDDL electrode at −1.1 V vs. RHE under 222-nm irradiation. The high efficiency and stability of this catalyst are ascribed to the in situ photoactivation of the BDDL surface during the photoelectrochemical reaction. The present work reveals the potential of BDDL as a high-energy electron source for use with co-catalysts in photochemical conversion. PMID:27892544

  6. Continuous and selective measurement of oxytocin and vasopressin using boron-doped diamond electrodes

    PubMed Central

    Asai, Kai; Ivandini, Tribidasari A.; Einaga, Yasuaki

    2016-01-01

    The electrochemical detection of oxytocin using boron-doped diamond (BDD) electrodes was studied. Cyclic voltammetry of oxytocin in a phosphate buffer solution exhibits an oxidation peak at +0.7 V (vs. Ag/AgCl), which is attributable to oxidation of the phenolic group in the tyrosyl moiety. Furthermore, the linearity of the current peaks obtained in flow injection analysis (FIA) using BDD microelectrodes over the oxytocin concentration range from 0.1 to 10.0 μM with a detection limit of 50 nM (S/N = 3) was high (R2 = 0.995). Although the voltammograms of oxytocin and vasopressin observed with an as-deposited BDD electrode, as well as with a cathodically-reduced BDD electrode, were similar, a clear distinction was observed with anodically-oxidized BDD electrodes due to the attractive interaction between vasopressin and the oxidized BDD surface. By means of this distinction, selective measurements using chronoamperometry combined with flow injection analysis at an optimized potential were demonstrated, indicating the possibility of making selective in situ or in vivo measurements of oxytocin. PMID:27599852

  7. 3D-nanostructured boron-doped diamond for microelectrode array neural interfacing.

    PubMed

    Piret, Gaëlle; Hébert, Clément; Mazellier, Jean-Paul; Rousseau, Lionel; Scorsone, Emmanuel; Cottance, Myline; Lissorgues, Gaelle; Heuschkel, Marc O; Picaud, Serge; Bergonzo, Philippe; Yvert, Blaise

    2015-06-01

    The electrode material is a key element in the design of long-term neural implants and neuroprostheses. To date, the ideal electrode material offering high longevity, biocompatibility, low-noise recording and high stimulation capabilities remains to be found. We show that 3D-nanostructured boron doped diamond (BDD), an innovative material consisting in a chemically stable material with a high aspect ratio structure obtained by encapsulation of a carbon nanotube template within two BDD nanolayers, allows neural cell attachment, survival and neurite extension. Further, we developed arrays of 20-μm-diameter 3D-nanostructured BDD microelectrodes for neural interfacing. These microelectrodes exhibited low impedances and low intrinsic recording noise levels. In particular, they allowed the detection of low amplitude (10-20 μV) local-field potentials, single units and multiunit bursts neural activity in both acute whole embryonic hindbrain-spinal cord preparations and long-term hippocampal cell cultures. Also, cyclic voltammetry measurements showed a wide potential window of about 3 V and a charge storage capacity of 10 mC.cm(-2), showing high potentiality of this material for neural stimulation. These results demonstrate the attractiveness of 3D-nanostructured BDD as a novel material for neural interfacing, with potential applications for the design of biocompatible neural implants for the exploration and rehabilitation of the nervous system.

  8. QUANTIFICATION OF MERCURY IN FLUE GAS EMISSION USING BORON-DOPED DIAMOND ELECTROCHEMISTRY

    SciTech Connect

    A. Manivannan; M.S. Seehra

    2003-08-19

    In this project, we have attempted to develop a new technique utilizing Boron-doped diamond (BDD) films to electrochemically detect mercury dissolved in solution via the initial deposition of metallic mercury, followed by anodic linear sweep voltammetry in the range from 10-10{sup -10} M to 10{sup -5} M. Cyclic voltammetry (CV) and differential pulse voltammetry (DPV) techniques were employed. The extremely low background current for BDD electrodes compared to glassy carbon (GC) provides a strong advantage in trace metal detection. CV peak currents showed good linearity in the micromolar range. A detection level of 6.8 x 10{sup -10} M was achieved with DPV in 0.1 M KNO{sub 3} (pH = 1) for a deposition time of 20 minutes. Reproducible stripping peaks were obtained, even for the low concentration range. A comparison with GC shows that BDD is superior. Linear behavior was also obtained in the mercury concentration range from 10{sup -10} M to 10{sup -9} M.

  9. Electrochemical oxidation of biological pretreated and membrane separated landfill leachate concentrates on boron doped diamond anode

    NASA Astrophysics Data System (ADS)

    Zhou, Bo; Yu, Zhiming; Wei, Qiuping; Long, HangYu; Xie, Youneng; Wang, Yijia

    2016-07-01

    In the present study, the high quality boron-doped diamond (BDD) electrodes with excellent electrochemical properties were deposited on niobium (Nb) substrates by hot filament chemical vapor deposition (HFCVD) method. The electrochemical oxidation of landfill leachate concentrates from disc tube reverse osmosis (DTRO) process over a BDD anode was investigated. The effects of varying operating parameters, such as current density, initial pH, flow velocity and cathode material on degradation efficiency were also evaluated following changes in chemical oxygen demand (COD) and ammonium nitrogen (NH3sbnd N). The instantaneous current efficiency (ICE) was used to appraise different operating conditions. As a result, the best conditions obtained were as follows, current density 50 mA cm-2, pH 5.16, flow velocity 6 L h-1. Under these conditions, 87.5% COD and 74.06% NH3sbnd N removal were achieved after 6 h treatment, with specific energy consumption of 223.2 kWh m-3. In short, these results indicated that the electrochemical oxidation with BDD/Nb anode is an effective method for the treatment of landfill leachate concentrates.

  10. Cadmium detection via boron-doped diamond electrodes: surfactant inhibited stripping voltammetry.

    PubMed

    Banks, Craig E; Hyde, Michael E; Tomčík, Peter; Jacobs, Robert; Compton, Richard G

    2004-02-06

    The deposition of cadmium on boron-doped diamond is investigated with square-wave anodic stripping voltammetry. The system was investigated in quiescent conditions, in the presence of an acoustic field and then in the presence of the neutral surfactant Triton((R)) X-100. The effect of optimised insonation was to increase the sensitivity from 0.63 (under silent conditions) to 3.78muAmuM(-1) and to reduce the limit of detection by an order of magnitude from 10(-8) to 10(-9)M. Measurements with or without insonation were found to deteriorate in the presence of the surfactant. Studies using AFM and chronoamperometry showed that this was due to inhibition of the deposition of the metal. Comparative data obtained for analogous measurements for copper on glassy carbon in the presence of industrial effluent, which also leads to signal deterioration under silent but not insonated conditions, showed that for this case also it was the nucleation of copper rather than the metal dissolution which was adversely affected.

  11. Kinetic study of electro-Fenton oxidation of azo dyes on boron-doped diamond electrode.

    PubMed

    Almomani, Fares; Baranova, Elena A

    2013-01-01

    The present work compares electrochemical degradation of red and blue azo textile dyes in single- and two-compartment electrochemical cells in the presence of Fenton reagent (Fe2+) and using a boron-doped diamond anode. Degradation of both dyes was related to the concentration of dye, applied current density and the concentration of FeSO4 catalyst. Complete colour removal and approximately 91% of organic matter oxidation was achieved in a two-compartment electrochemical cell at an applied current density of 20 mA x cm(-2), pH of 3 and Fe(2+) ion concentration of 0.02 mM. Higher current density and reaction time were required to achieve the same removals in a one-compartment electrochemical cell. Dye degradation kinetics as well as chemical oxygen demand removal rate were successfully modelled to pseudo first-order kinetics. The apparent first-order rate constants (k(o)) for degradation of red dye with an initial concentration of 20, 40 and 60 ppm were found to be 2.67 +/- 0.16, 2.19 +/- 0.09 and 1.5 +/- 0.03 min(-1), and for blue dye at the same initial concentrations were 1.99 +/- 0.2, 0.95 +/- 0.02 and 0.71 +/- 0.030 min(-1), respectively.

  12. Microwave activated electrochemical degradation of 2,4-dichlorophenoxyacetic acid at boron-doped diamond electrode.

    PubMed

    Gao, Junxia; Zhao, Guohua; Shi, Wei; Li, Dongming

    2009-04-01

    A method for improving the oxidation ability of the electrode is proposed by using microwave activation in electrochemical oxidation. The electrochemical degradation of 2,4-dichlorophenoxyacetic acid (2,4-D) with microwave radiation (MW-EC) was carried out in a continuous flow system under atmospheric pressure. In 3 h the removal of COD, ACE (average current efficiency) and Cl(-) concentration was 1.63, 2.25 and 1.67 times as that without microwave radiation, respectively. The high degradation ability was resulted from the more active centers at the electrode surface due to the microwave radiation. The decay kinetics of 2,4-D followed a pseudo first-order reaction. The rate constant was increased to 2.16x10(-4) s(-1) with the microwave radiation, while it was 8.52x10(-5) s(-1) with electrochemical treatment only (EC). Under both conditions, the main intermediates were identified and quantified by High Performance Liquid Chromatography (HPLC). The formation rate of intermediate products and further degradation rate were increased by about 50-120% with the microwave radiation. The activation of electrochemical oxidation by microwave was discussed from the diffusion process, adsorption and the temperature at boron-doped diamond (BDD) electrode.

  13. Label-free DNA sensor by boron-doped diamond electrode using an ac impedimetric approach.

    PubMed

    Weng, Jian; Zhang, Jianfeng; Li, Hui; Sun, Liping; Lin, Chenghong; Zhang, Qiqing

    2008-09-15

    An electrochemical biosensor using a boron-doped diamond (BDD) electrode is described for differentiating between gene sequences according to DNA hybridization events using an ac impedimetric approach. BDD electrodes were dipped into a 1% solution of polyethylenimine (PEI) to adsorb a thin layer of positively charged PEI on the surface of BDD, then PEI-modified BDD electrodes were used to immobilize negatively charged single-stranded PCR fragments from Exon 7 of human p53 gene. Alternating current impedimetric measurements were first performed on these systems in phosphate buffered saline (PBS) and then upon exposure to single-stranded DNA (ssDNA). When the ssDNA-immobilized BDD electrode and solution ssDNA were completely complementary, a large drop in impedance was measured. Complementary DNA could be clearly detected at concentrations down to 10 (-19) g mL (-1) at a fixed frequency (10 Hz). Higher concentrations of DNA gave faster hybridization with saturation occurring at levels above 1.0 pg mL (-1.) Responses were much lower upon exposure to noncDNA, even at higher concentrations. The results show it is possible to directly detect target DNA at a fixed frequency and without additional labeling.

  14. Monitoring the evolution of boron doped porous diamond electrode on flexible retinal implant by OCT and in vivo impedance spectroscopy.

    PubMed

    Hébert, Clément; Cottance, Myline; Degardin, Julie; Scorsone, Emmanuel; Rousseau, Lionel; Lissorgues, Gaelle; Bergonzo, Philippe; Picaud, Serge

    2016-12-01

    Nanocrystalline Boron doped Diamond proved to be a very attractive material for neural interfacing, especially with the retina, where reduce glia growth is observed with respect to other materials, thus facilitating neuro-stimulation over long terms. In the present study, we integrated diamond microelectrodes on a polyimide substrate and investigated their performances for the development of neural prosthesis. A full description of the microfabrication of the implants is provided and their functionalities are assessed using cyclic voltammetry and electrochemical impedance spectroscopy. A porous structure of the electrode surface was thus revealed and showed promising properties for neural recording or stimulation. Using the flexible implant, we showed that is possible to follow in vivo the evolution of the electric contact between the diamond electrodes and the retina over 4months by using electrochemical impedance spectroscopy. The position of the implant was also monitored by optical coherence tomography to corroborate the information given by the impedance measurements. The results suggest that diamond microelectrodes are very good candidates for retinal prosthesis.

  15. Optical emission study of a doped diamond deposition process by plasma enhanced chemical vapor deposition

    SciTech Connect

    Rayar, M.; Supiot, P.; Veis, P.; Gicquel, A.

    2008-08-01

    Standard H{sub 2}/CH{sub 4}/B{sub 2}H{sub 6} plasmas (99% of H{sub 2} and 1% of CH{sub 4}, with 0-100 ppm of B{sub 2}H{sub 6} added) used for doped diamond film growth are studied by optical emission spectroscopy in order to gain a better understanding of the influence of boron species on the gas phase chemistry. Only two boron species are detected under our experimental conditions (9/15/23 W cm{sup -3} average microwave power density values), and the emission spectra used for studies reported here are B({sup 2}S{sub 1/2}-{sup 2}P{sub 1/2,3/2}{sup 0}) and BH[A {sup 1}{pi}-X {sup 1}{sigma}{sup +}(0,0)]. Variations of their respective emission intensities as a function of the ratio B/C, the boron to carbon ratio in the gas mixture, are reported. We confirmed that the plasma parameters (T{sub g}, T{sub e}, and n{sub e}) are not affected by the introduction of diborane, and the number densities of B atoms and BH radical species were estimated from experimental measurements. The results are compared to those obtained from a zero-dimensional chemical kinetic model where two groups of reactions are considered: (1) BH{sub x}+H{r_reversible}BH{sub x-1}+H{sub 2} (x=1-3) by analogy with the well-known equilibrium CH{sub x}+H set of reactions, which occurs, in particular, in diamond deposition reactors; and (2) from conventional organic chemistry, the set of reactions involving boron species: BH{sub x}+C{sub 2}H{sub 2} (x=0-1). The results clearly show that the model based on hydrogen and boron hydrides reactions alone is not consistent with the experimental results, while it is so when taking into account both sets of reactions. Once an upper limit for the boron species number densities has been estimated, axial profiles are calculated on the basis of the plasma model results obtained previously in Laboratoire d'Ingenierie des Materiaux et des Hautes Pressions, and significant differences in trends for different boron species are found. At the plasma-to-substrate boundary

  16. Optical emission study of a doped diamond deposition process by plasma enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Rayar, M.; Supiot, P.; Veis, P.; Gicquel, A.

    2008-08-01

    Standard H2/CH4/B2H6 plasmas (99% of H2 and 1% of CH4, with 0-100ppm of B2H6 added) used for doped diamond film growth are studied by optical emission spectroscopy in order to gain a better understanding of the influence of boron species on the gas phase chemistry. Only two boron species are detected under our experimental conditions (9/15/23Wcm-3 average microwave power density values), and the emission spectra used for studies reported here are B(S1/22-P1/2,3/202) and BH [AΠ1-XΣ+1(0,0)]. Variations of their respective emission intensities as a function of the ratio B /C, the boron to carbon ratio in the gas mixture, are reported. We confirmed that the plasma parameters (Tg, Te, and ne) are not affected by the introduction of diborane, and the number densities of B atoms and BH radical species were estimated from experimental measurements. The results are compared to those obtained from a zero-dimensional chemical kinetic model where two groups of reactions are considered: (1) BHx+H ↔BHx -1+H2 (x=1-3) by analogy with the well-known equilibrium CHx+H set of reactions, which occurs, in particular, in diamond deposition reactors; and (2) from conventional organic chemistry, the set of reactions involving boron species: BHx+C2H2 (x =0-1). The results clearly show that the model based on hydrogen and boron hydrides reactions alone is not consistent with the experimental results, while it is so when taking into account both sets of reactions. Once an upper limit for the boron species number densities has been estimated, axial profiles are calculated on the basis of the plasma model results obtained previously in Laboratoire d'Ingénierie des Matériaux et des Hautes Pressions, and significant differences in trends for different boron species are found. At the plasma-to-substrate boundary, [BH] and [B] drop off in contrast to [BH2], which shows little decrease, and [BH3], which shows little increase, in this region.

  17. Stabilizing shallow color centers in diamond created by nitrogen delta-doping using SF{sub 6} plasma treatment

    SciTech Connect

    Osterkamp, Christian; Lang, Johannes; Scharpf, Jochen; Müller, Christoph; McGuinness, Liam Paul; Naydenov, Boris Jelezko, Fedor; Diemant, Thomas; Behm, R. Jürgen

    2015-03-16

    Here we report the fabrication of stable, shallow (<5 nm) nitrogen-vacancy (NV) centers in diamond by nitrogen delta doping at the last stage of the chemical vapor deposition growth process. The NVs are stabilized after treating the diamond in SF{sub 6} plasma, otherwise the color centers are not observed, suggesting a strong influence from the surface. X-ray photoelectron spectroscopy measurements show the presence of only fluorine atoms on the surface, in contrast to previous studies, indicating very good surface coverage. We managed to detect hydrogen nuclear magnetic resonance signal from protons in the immersion oil, revealing a depth of the NVs of about 5 nm.

  18. Precise control of photoluminescence of silicon-vacancy color centers in homoepitaxial single-crystal diamond: evaluation of efficiency of Si doping from gas phase

    NASA Astrophysics Data System (ADS)

    Ralchenko, Victor; Sedov, Vadim; Saraykin, Vladimir; Bolshakov, Andrey; Zavedeev, Evgeny; Ashkinazi, Evgeny; Khomich, Andrew

    2016-09-01

    Ability to precisely control the Si-related color center abundance in diamond is important for the use of silicon-vacancy (SiV) defects with bright photoluminescence (PL) in quantum information technologies and optical biomarkers. Here, we evaluated the efficiency of Si incorporation in (100) plane of homoepitaxial diamond layers upon in situ doping by adding silane SiH4 in the course of diamond chemical vapor deposition in microwave plasma using CH4-H2 mixtures. Both the Si concentration in the doped samples, as determined by secondary ion mass spectrometry, and PL intensity of SiV centers at 738 nm wavelength, measured at excitation wavelength of 473 nm, demonstrate a linear increase with silane content in feed gas in the range. The incorporation efficiency f, defined as the ratio of Si concentration in diamond to that in gas, f = [Si/C]dia/[Si/C]gas is found to be (1.1 ± 0.5) × 10-3 for the silane concentrations explored, [SiH4/CH4] < 0.7 %; thus, the Si atoms are accommodated in (100) diamond face easier than nitrogen and phosphorus, but more difficult than boron. This finding allows a tailoring of the Si content and photoluminescence intensity of SiV centers in in situ doped CVD diamond.

  19. Sulfate-mediated electrooxidation of X-ray contrast media on boron-doped diamond anode.

    PubMed

    Radjenovic, Jelena; Petrovic, Mira

    2016-05-01

    Recently, electrochemical activation of sulfate ions to sulfate radical species and nonradically activated persulfate has been demonstrated at boron-doped diamond (BDD) anode, which enhanced the electrooxidation kinetics of several persistent contaminants. In this study, we investigated the transformation pathways of two X-ray contrast media (ICM), diatrizoate and iopromide, in electrooxidation at BDD anode using sulfate and inert nitrate anolyte. Sulfate anolyte yielded a seven-fold increase in apparent rate constants for ICM oxidation compared to inert nitrate anolyte, and a two-fold increase for the removal of organic carbon. Higher iodine release was observed in electrooxidation of diatrizoate compared to iopromide. In the case of diatrizoate, around 80% of deiodination efficiency was achieved in both anolytes. Deiodination efficiency of iopromide was somewhat lower in nitrate anolyte (≤75%) and significantly reduced in sulfate anolyte (≤46%) due to a larger steric hindrance of alkyl side chains. Moreover, a considerable lag phase of iopromide deiodination was observed in sulfate anolyte, indicating that initial oxidation reactions took place almost exclusively at the alkyl side chains. Several transformation products (TPs) of ICM were identified in electrooxidation in sulfate anolyte, and only three TPs in the case of nitrate anolyte. The main mechanistic steps in the oxidation of iopromide were H-abstraction and bond cleavage in the alkyl side chains. Diatrizoate was mainly transformed through oxidative cleavage of iodine substituent and inter-molecular cyclization. Two hydroxylamine derivatives of iopromide and a nitro-derivative of diatrizoate were observed in sulfate anolyte. These products have not been reported previously for hydroxyl radical-mediated oxidation of ICM. Given that electron-transfer mechanism is more typical for sulfate than for hydroxyl radicals, formation of hydroxylamine and nitro-derivatives of ICM was assigned to one

  20. Bioelectrochemical degradation of urea at platinized boron doped diamond electrodes for bioregenerative applications

    NASA Astrophysics Data System (ADS)

    Nicolau, Eduardo; Gonzalez, Ileana; Nicolau, Eduardo; Cabrera, Carlos R.

    The recovery of potable water from space mission wastewater is critical for the life support and environmental health of crew members in long-term missions. NASA estimates reveal that at manned space missions 0.06 kg/person·day of urine is produced, with urea and various salts as its main components. Current spacecraft water reclamation strategies include the utilization of not only multifiltration systems (MF) and reverse osmosis (RO), but also biological components to deal with crew urine streams. In this research we explore the utilization of urease (EC 3.5.1.5) to convert urea directly to nitrogen by the in-situ utilization of the reaction products, to increase the amount of clean water in future space expeditions. First of all, platinum was electrodeposited on boron doped diamond electrodes by cycling the potential between -0.2 V and 1.0 V in metal/0.5 M H2SO4 solution. SEM images of the electrodes showed a distribution of platinum nanoparticles ranging between 50 nm and 300 nm. The biochemical reaction of urease in nature produces ammonia and carbon dioxide from urea. Based on this, Cyclic Voltammetry experiments of an ammonium acetate solution at pH 10 were performed showing an anodic peak at -0.3 V vs. Ag/AgCl due to the ammonia oxidation. Then, a urease solution (Jack Bean) was poured into the electrochemical cell and subsequent additions of urea were performed with the potential held at -0.3 V in order to promote ammonia oxidation. Chronoamperometry data shows that with more than five urea additions the enzyme still responding by producing ammonia, which is being subsequently oxidized at the electrode surface and producing molecular nitrogen. This research has tremendous applications for future long-term space missions since the reaction byproducts could be used for a biomass subsystem (in-situ resource recovery), while generating electricity from the same process.

  1. Kinetics of the electrochemical mineralization of perfluorooctanoic acid on ultrananocrystalline boron doped conductive diamond electrodes.

    PubMed

    Urtiaga, Ane; Fernández-González, Carolina; Gómez-Lavín, Sonia; Ortiz, Inmaculada

    2015-06-01

    This work deals with the electrochemical degradation and mineralization of perfluorooctanoic acid (PFOA). Model aqueous solutions of PFOA (100mg/L) were electro-oxidized under galvanostatic conditions in a flow-by undivided cell provided with a tungsten cathode and an anode formed by a commercial ultrananocrystalline boron doped diamond (BDD) coating on a niobium substrate. A systematic experimental study was conducted in order to analyze the influence of the following operation variables: (i) the supporting electrolyte, NaClO4 (1.4 and 8.4g/L) and Na2SO4 (5g/L); (ii) the applied current density, japp, in the range 50-200 A/m(2) and (iii) the hydrodynamic conditions, in terms of flowrate in the range 0.4×10(-4)-1.7×10(-4)m(3)/s and temperature in the range 293-313K. After 6h of treatment and at japp 200A/m(2), PFOA removal was higher than 93% and the mineralization ratio, obtained from the decrease of the total organic carbon (TOC) was 95%. The electrochemical generation of hydroxyl radicals in the supporting electrolyte was experimentally measured based on their reaction with dimethyl sulfoxide. The enhanced formation of hydroxyl radicals at higher japp was related to the faster kinetics of PFOA removal. The fitting of experimental data to the proposed kinetic model provided the first order rate constants of PFOA degradation, kc(1) that moved from 2.06×10(-4) to 15.58×10(-4)s(-1), when japp varied from 50 to 200A/m(2).

  2. Advanced treatment of biologically pretreated coking wastewater by electrochemical oxidation using boron-doped diamond electrodes.

    PubMed

    Zhu, Xiuping; Ni, Jinren; Lai, Peng

    2009-09-01

    Electrochemical oxidation is a promising technology to treatment of bio-refractory wastewater. Coking wastewater contains high concentration of refractory and toxic compounds and the water quality usually cannot meet the discharge standards after conventional biological treatment processes. This paper initially investigated the electrochemical oxidation using boron-doped diamond (BDD) anode for advanced treatment of coking wastewater. Under the experimental conditions (current density 20-60mAcm(-2), pH 3-11, and temperature 20-60 degrees C) using BDD anode, complete mineralization of organic pollutants was almost achieved, and surplus ammonia-nitrogen (NH(3)-N) was further removed thoroughly when pH was not adjusted or at alkaline value. Moreover, the TOC and NH(3)-N removal rates in BDD anode cell were much greater than those in other common anode systems such as SnO(2) and PbO(2) anodes cells. Given the same target to meet the National Discharge Standard of China, the energy consumption of 64kWhkgCOD(-1) observed in BDD anode system was only about 60% as much as those observed in SnO(2) and PbO(2) anode systems. Further investigation revealed that, in BDD anode cell, organic pollutants were mainly degraded by reaction with free hydroxyl radicals and electrogenerated oxidants (S(2)O(8)(2-), H(2)O(2), and other oxidants) played a less important role, while direct electrochemical oxidation and indirect electrochemical oxidation mediated by active chlorine can be negligible. These results showed great potential of BDD anode system in engineering application as a final treatment of coking wastewater.

  3. Effect of select organic compounds on perchlorate formation at boron-doped diamond film anodes.

    PubMed

    Donaghue, Adrienne; Chaplin, Brian P

    2013-01-01

    Rates of ClO4(-) formation from ClO3(-) oxidation were investigated in batch experiments as a function of organic compounds (p-nitrophenol, p-benzoquinone, p-methoxyphenol, and oxalic acid) and current density using boron-doped diamond film anodes. Excluding organics, ClO4(-) formation rates ranged from 359 to 687 μmoles m(-2) min(-1) for current densities of 1-10 mA cm(-2). The presence of p-substituted phenols inhibited ClO4(-) formation rates between 13.0 and 99.6%. Results from a reactive-transport model of the diffuse layer adjacent to the anode surface indicate that competition between organics and ClO3(•) for OH(•) within a reaction zone (0.02-0.96 μm) adjacent to the anode controls ClO4(-) formation. Under kinetic-limited conditions (1.0 mA cm(-2)), organics reach the anode surface and substrates with higher OH(•) reaction rates demonstrate greater inhibition of perchlorate formation (IPF). At higher current densities (10 mA cm(-2)), organic compound oxidation becomes mass transfer-limited and compounds degrade a small distance from the anode surface (∼ 0.26 μm for p-methoxyphenol). Therefore, OH(•) scavenging does not occur at the anode surface and IPF values decrease. Results provide evidence for the existence of desorbed OH(•) near the anode surface and highlight the importance of controlling reactor operating conditions to limit ClO4(-) production during anodic treatment of organic compounds.

  4. Mechanism of perchlorate formation on boron-doped diamond film anodes.

    PubMed

    Azizi, Orchideh; Hubler, David; Schrader, Glenn; Farrell, James; Chaplin, Brian P

    2011-12-15

    This research investigated the mechanism of perchlorate (ClO(4)(-)) formation from chlorate (ClO(3)(-)) on boron-doped diamond (BDD) film anodes by use of a rotating disk electrode reactor. Rates of ClO(4)(-) formation were determined as functions of the electrode potential (2.29-2.70 V/standard hydrogen electrode, SHE) and temperature (10-40 °C). At all applied potentials and a ClO(3)(-) concentration of 1 mM, ClO(4)(-) production rates were zeroth-order with respect to ClO(4)(-) concentration. Experimental and density functional theory (DFT) results indicate that ClO(3)(-) oxidation proceeds via a combination of direct electron transfer and hydroxyl radical oxidation with a measured apparent activation energy of 6.9 ± 1.8 kJ·mol(-1) at a potential of 2.60 V/SHE. DFT simulations indicate that the ClO(4)(-) formation mechanism involves direct oxidation of ClO(3)(-) at the BDD surface to form ClO(3)(•), which becomes activationless at potentials > 0.76 V/SHE. Perchloric acid is then formed via the activationless homogeneous reaction between ClO(3)(•) and OH(•) in the diffuse layer next to the BDD surface. DFT simulations also indicate that the reduction of ClO(3)(•) can occur at radical sites on the BDD surface to form ClO(3)(-) and ClO(2), which limits the overall rate of ClO(4)(-) formation.

  5. Electric field breakdown of lateral-type Schottky diodes formed on lightly doped homoepitaxial diamond

    NASA Astrophysics Data System (ADS)

    Teraji, Tokuyuki; Koizumi, Satoshi; Koide, Yasuo; Ito, Toshimichi

    2008-07-01

    The reverse current of lateral-type Schottky diodes fabricated on p-type homoepitaxial diamond was analyzed by changing the distance between Schottky and Ohmic electrodes and the metal materials in the Schottky electrodes. The maximum electric field at breakdown was 0.56 MV cm -1 for the Au Schottky contact and less than 0.26 MV cm -1 for the Al Schottky contact. The breakdown voltage depended on the electrode distance when the diamond surface was revealed in vacuum, whereas the Schottky diodes sustained the applied voltage of 500 V, corresponding to 0.69 MV cm -1, after covering of the diamond surface with an insulating liquid. Diamond surface protection is an indispensable technique for fabrication of high-voltage Schottky diodes based on diamond.

  6. Enhanced field emission characteristics of boron doped diamond films grown by microwave plasma assisted chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Koinkar, Pankaj M.; Patil, Sandip S.; Kim, Tae-Gyu; Yonekura, Daisuke; More, Mahendra A.; Joag, Dilip S.; Murakami, Ri-ichi

    2011-01-01

    Boron doped diamond films were synthesized on silicon substrates by microwave plasma chemical vapor deposition (MPCVD) technique. The effect of B 2O 3 concentration varied from 1000 to 5000 ppm on the field emission characteristics was examined. The surface morphology and quality of films were characterized by scanning electron microscope (SEM) and Raman spectroscopy. The surface morphology obtained by SEM showed variation from facetted microcrystal covered with nanometric grains to cauliflower of nanocrystalline diamond (NCD) particles with increasing B 2O 3 concentration. The Raman spectra confirm the formation of NCD films. The field emission properties of NCD films were observed to improve upon increasing boron concentration. The values of the onset field and threshold field are observed to be as low as 0.36 and 0.08 V/μm, respectively. The field emission current stability investigated at the preset value of ˜1 μA is observed to be good, in each case. The enhanced field emission properties are attributed to the better electrical conductivity coupled with the nanometric features of the diamond films.

  7. Electrically conductive diamond electrodes

    DOEpatents

    Swain, Greg; Fischer, Anne ,; Bennett, Jason; Lowe, Michael

    2009-05-19

    An electrically conductive diamond electrode and process for preparation thereof is described. The electrode comprises diamond particles coated with electrically conductive doped diamond preferably by chemical vapor deposition which are held together with a binder. The electrodes are useful for oxidation reduction in gas, such as hydrogen generation by electrolysis.

  8. Computational studies of elementary steps relating to boron doping during diamond chemical vapour deposition.

    PubMed

    Cheesman, Andrew; Harvey, Jeremy N; Ashfold, Michael N R

    2005-03-21

    Density functional theory-based electronic structure computations on small models of the diamond {100} surface have enabled prediction of the energetics and activation parameters of a number of plausible mechanistic steps for boron incorporation into, and boron loss from, the growing diamond surface. Initial proving calculations for the carbon-only case show, as in previous work, that the rate-limiting step for diamond growth involves opening of a five-membered ring species, and subsequent closure to form six-membered rings as in bulk diamond. The five-membered ring intermediate arises following 2 x 1 reconstruction of the {100} surface, or at steps on the {111} surface. Diamond growth arises as a result of successful competition between the ring-opening step and a two-carbon loss step, both of which involve significant activation barriers. In the boron case, we find that BH(x) (x = 0-3) species can all bind to radical sites on the diamond {100} surface to form stable adducts. Interconversion between the surface bound BH, species is facile at the H and H2 number densities and temperatures typical for diamond CVD conditions. B incorporation can occur by a ring expansion mechanism, as in the all-carbon case, and by direct insertion of surface bound BH (and B) species into the C-C bond on the diamond {100} surface. BH(x) loss processes identified include release of surface bound BH3 and/or CH2BH species into the gas phase. Both B incorporation into, and B loss from, the diamond {100} surface are deduced to be significantly less energy demanding than the corresponding carbon addition and loss processes.

  9. CE with a boron-doped diamond electrode for trace detection of endocrine disruptors in water samples.

    PubMed

    Browne, Damien J; Zhou, Lin; Luong, John H T; Glennon, Jeremy D

    2013-07-01

    Off-line SPE and CE coupled with electrochemical detection have been used for the determination of bisphenol A (BPA), bisphenol F, 4-ethylphenol, and bisphenol A diglycidyl ether in bottled drinking water. The use of boron-doped diamond electrode as an electrochemical detector in amperometric mode that provides a favorable analytical performance for detecting these endocrine-disrupting compounds, such as lower noise levels, higher peak resolution with enhanced sensitivity, and improved resistance against electrode passivation. The oxidative electrochemical detection of the endocrine-disrupting compounds was accomplished by boron-doped diamond electrode poised at +1.4 V versus Ag/AgCl without electrode pretreatment. An off-line SPE procedure (Bond Elut® C18 SPE cartridge) was utilized to extract and preconcentrate the compounds prior to separation and detection. The minimum concentration detectable for all four compounds ranged from 0.01 to 0.06 μM, having S/N equal to three. After exposing the plastic bottle water container under sunlight for 7 days, the estimated concentration of BPA in the bottled drinking water was estimated to be 0.03 μM. This proposed approach has great potential for rapid and effective determination of BPA content present in water packaging of plastic bottles that have been exposed to sunlight for an extended period of time.

  10. Formation of Boron-Carbon Nanosheets and Bilayers in Boron-Doped Diamond: Origin of Metallicity and Superconductivity.

    PubMed

    Polyakov, S N; Denisov, V N; Mavrin, B N; Kirichenko, A N; Kuznetsov, M S; Martyushov, S Yu; Terentiev, S A; Blank, V D

    2016-12-01

    The insufficient data on a structure of the boron-doped diamond (BDD) has frustrated efforts to fully understand the fascinating electronic properties of this material and how they evolve with doping. We have employed X-ray diffraction and Raman scattering for detailed study of the large-sized BDD single crystals. We demonstrate a formation of boron-carbon (B-C) nanosheets and bilayers in BDD with increasing boron concentration. An incorporation of two boron atoms in the diamond unit cell plays a key role for the B-C nanosheets and bilayer formation. Evidence for these B-C bilayers which are parallel to {111} planes is provided by the observation of high-order, super-lattice reflections in X-ray diffraction and Laue patterns. B-C nanosheets and bilayers minimize the strain energy and affect the electronic structure of BDD. A new shallow acceptor level associated with B-C nanosheets at ~37 meV and the spin-orbit splitting of the valence band of ~6 meV are observed in electronic Raman scattering. We identified that the superconducting transitions occur in the (111) BDD surfaces only. We believe that the origin of Mott and superconducting transitions is associated with the two-dimensional (2D) misfit layer structure of BDD. A model for the BDD crystal structure, based on X-ray and Raman data, is proposed and confirmed by density functional theoretical calculation.

  11. Resistance to protein adsorption and adhesion of fibroblasts on nanocrystalline diamond films: the role of topography and boron doping.

    PubMed

    Alcaide, María; Papaioannou, Stavros; Taylor, Andrew; Fekete, Ladislav; Gurevich, Leonid; Zachar, Vladimir; Pennisi, Cristian Pablo

    2016-05-01

    Boron-doped nanocrystalline diamond (BNCD) films exhibit outstanding electrochemical properties that make them very attractive for the fabrication of electrodes for novel neural interfaces and prosthetics. In these devices, the physicochemical properties of the electrode materials are critical to ensure an efficient long-term performance. The aim of this study was to investigate the relative contribution of topography and doping to the biological performance of BNCD films. For this purpose, undoped and boron-doped NCD films were deposited on low roughness (LR) and high roughness (HR) substrates, which were studied in vitro by means of protein adsorption and fibroblast growth assays. Our results show that BNCD films significantly reduce the adsorption of serum proteins, mostly on the LR substrates. As compared to fibroblasts cultured on LR BNCD films, cells grown on the HR BNCD films showed significantly reduced adhesion and lower growth rates. The mean length of fibronectin fibrils deposited by the cells was significantly increased in the BNCD coated substrates, mainly in the LR surfaces. Overall, the largest influence on protein adsorption, cell adhesion, proliferation, and fibronectin deposition was due to the underlying sub-micron topography, with little or no influence of boron doping. In perspective, BNCD films displaying surface roughness in the submicron range may be used as a strategy to reduce the fibroblast growth on the surface of neural electrodes.

  12. Ti-doped hydrogenated diamond like carbon coating deposited by hybrid physical vapor deposition and plasma enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Lee, Na Rae; Sle Jun, Yee; Moon, Kyoung Il; Sunyong Lee, Caroline

    2017-03-01

    Diamond-like carbon films containing titanium and hydrogen (Ti-doped DLC:H) were synthesized using a hybrid technique based on physical vapor deposition (PVD) and plasma enhanced chemical vapor deposition (PECVD). The film was deposited under a mixture of argon (Ar) and acetylene gas (C2H2). The amount of Ti in the Ti-doped DLC:H film was controlled by varying the DC power of the Ti sputtering target ranging from 0 to 240 W. The composition, microstructure, mechanical and chemical properties of Ti-doped DLC:H films with varying Ti concentrations, were investigated using Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), nano indentation, a ball-on-disk tribometer, a four-point probe system and dynamic anodic testing. As a result, the optimum composition of Ti in Ti-doped DLC:H film using our hybrid method was found to be a Ti content of 18 at. %, having superior electrical conductivity and high corrosion resistance, suitable for bipolar plates. Its hardness value was measured to be 25.6 GPa with a low friction factor.

  13. Electron paramagnetic resonance of the N2V- defect in 15N -doped synthetic diamond

    NASA Astrophysics Data System (ADS)

    Green, B. L.; Dale, M. W.; Newton, M. E.; Fisher, D.

    2015-10-01

    Nitrogen is the dominant impurity in the majority of natural and synthetic diamonds, and the family of nitrogen vacancy-type (NnV ) defects are crucial in our understanding of defect dynamics in these diamonds. A significant gap is the lack of positive identification of N2V- , the dominant charge state of N2V in diamond that contains a significant concentration of electron donors. In this paper, we employ isotopically-enriched diamond to identify the EPR spectrum associated with 15N2V- and use the derived spin Hamiltonian parameters to identify 14N2V- in a natural isotopic abundance sample. The electronic wave function of the N2V- ground state and previous lack of identification is discussed. The N2V- EPR spectrum intensity is shown to correlate with the H2 optical absorption over an order of magnitude in concentration.

  14. Further improvement of mechanical and tribological properties of Cr-doped diamond-like carbon nanocomposite coatings by N codoping

    NASA Astrophysics Data System (ADS)

    Zou, Changwei; Xie, Wei; Tang, Xiaoshan

    2016-11-01

    In this study, the effects of nitrogen codoping on the microstructure and mechanical properties of Cr-doped diamond-like carbon (DLC) nanocomposite coatings were investigated in detail. Compared with undoped DLC coatings, the Cr-DLC and N/Cr-DLC coatings showed higher root-mean-square (RMS) roughness values. However, from the X-ray photoelectron spectroscopy (XPS) and Raman results, the fraction of sp2 carbon bonds of N/Cr-DLC coatings increased with increasing N content, which indicated the graphitization of the coatings. The hardness and elastic modulus of N/Cr-DLC coatings with 1.8 at. % N were about 26.8 and 218 GPa, respectively. The observed hardness increase with N codoping was attributed to the incorporation of N in the C network along with the formation of CrC(N) nanoparticles, as confirmed from the transmission electron microscopy (TEM) results. The internal stress markedly decreased from 0.93 to 0.32 GPa as the N content increased from 0 to 10.3 at. %. Furthermore, N doping significantly improved the high-temperature dry friction behavior of DLC coatings. The friction coefficient of N/Cr-DLC coatings with 8.0 and 10.3 at. % N was kept at about 0.2 during the overall sliding test at 500 °C. These results showed that appropriate N doping could promote the mechanical and tribological properties of Cr-DLC nanocomposite coatings.

  15. Undoped and boron doped diamond nanoparticles as platinum and platinum-ruthenium catalyst support for direct methanol fuel cell application

    NASA Astrophysics Data System (ADS)

    La Torre Riveros, Lyda

    Nanoparticular diamond is a promising material that can be used as a robust and chemically stable catalytic support. It has been studied and characterized physically and electrochemically, in its powder and thin film forms. This thesis work intends to demonstrate that undoped diamond nanoparticles (DNPs) and boron-doped diamond nanoparticles (BDDNPs) can be used as an electrode and a catalytic support material for platinum and ruthenium catalysts. The electrochemical properties of diamond nanoparticle electrodes, fabricated using the ink paste method, were investigated. As an initial step, we carried out chemical purification of commercially available undoped DNPs by refluxing in aqueous HNO3 as well as of BDDNPs which were doped through a collaborative work with the University of Missouri. The purified material was characterized by spectroscopic and surface science techniques. The reversibility of reactions such as ferricyanide/ferrocyanide (Fe(CN) 63-/Fe(CN)64-) and hexaamineruthenium (III) chloride complexes as redox probes were evaluated by cyclic voltammetry at the undoped DNPs and BDDNPs surface. These redox probes showed limited peak currents and presented linear relationships between current (i) and the square root of the potential scan rate (v1/2). However, compared to conventional electrodes, the peak currents were smaller. BDDNPs show an improvement in charge transfer currents when compared to undoped DNPs. Platinum and ruthenium nanoparticles were chemically deposited on undoped DNPs and BDDNPs through the use of the excess of a mild reducing agent such NaBH4. In order to improve the nanoparticle dispersion sodium dodecyl benzene sulfonate (SDBS), a surfactant agent, was used. Percentages of platinum and ruthenium metals were varied as well as the stoichiometric amount of the reducing agent to determine adequate parameters for optimum performance in methanol oxidation. Both before and after the reducing process the samples were characterized by scanning

  16. Diamond field-effect transistors for RF power electronics: Novel NO2 hole doping and low-temperature deposited Al2O3 passivation

    NASA Astrophysics Data System (ADS)

    Kasu, Makoto

    2017-01-01

    Diamond possesses a combination of exceptional physical properties and is expected to be used as a semiconductor material in high-efficiency and high-power electronic devices. In this study, hole doping was observed when using NO2 molecules on a H-diamond surface. The activation energy of hole concentration in NO2/H-diamond was measured as 0.006 eV, and holes were fully activated at room temperature. A thermal stabilization of the hole channel was realized by passivation with an atomic-layer-deposited Al2O3 layer. The passivation method enabled the realization of a thermally stable high-performance diamond field-effect transistor (FET), which exhibited high-performance DC and RF characteristics. NO2 hole-doping and Al2O3-passivation technologies enabled reproducible measurements of MOS structure electric properties. Such technologies also facilitated observations of two-dimensional holes at the MOS interface and type-II band alignment of Al2O3/NO2/H-diamond. Additionally, the band diagram under various gate bias conditions was proposed on the basis of capacitance-voltage measurements and analysis using Poisson’s equations.

  17. Enhanced Growth and Osteogenic Differentiation of Human Osteoblast-Like Cells on Boron-Doped Nanocrystalline Diamond Thin Films

    PubMed Central

    Grausova, Lubica; Kromka, Alexander; Burdikova, Zuzana; Eckhardt, Adam; Rezek, Bohuslav; Vacik, Jiri; Haenen, Ken; Lisa, Vera; Bacakova, Lucie

    2011-01-01

    Intrinsic nanocrystalline diamond (NCD) films have been proven to be promising substrates for the adhesion, growth and osteogenic differentiation of bone-derived cells. To understand the role of various degrees of doping (semiconducting to metallic-like), the NCD films were deposited on silicon substrates by a microwave plasma-enhanced CVD process and their boron doping was achieved by adding trimethylboron to the CH4:H2 gas mixture, the B∶C ratio was 133, 1000 and 6700 ppm. The room temperature electrical resistivity of the films decreased from >10 MΩ (undoped films) to 55 kΩ, 0.6 kΩ, and 0.3 kΩ (doped films with 133, 1000 and 6700 ppm of B, respectively). The increase in the number of human osteoblast-like MG 63 cells in 7-day-old cultures on NCD films was most apparent on the NCD films doped with 133 and 1000 ppm of B (153,000±14,000 and 152,000±10,000 cells/cm2, respectively, compared to 113,000±10,000 cells/cm2 on undoped NCD films). As measured by ELISA per mg of total protein, the cells on NCD with 133 and 1000 ppm of B also contained the highest concentrations of collagen I and alkaline phosphatase, respectively. On the NCD films with 6700 ppm of B, the cells contained the highest concentration of focal adhesion protein vinculin, and the highest amount of collagen I was adsorbed. The concentration of osteocalcin also increased with increasing level of B doping. The cell viability on all tested NCD films was almost 100%. Measurements of the concentration of ICAM-1, i.e. an immunoglobuline adhesion molecule binding inflammatory cells, suggested that the cells on the NCD films did not undergo significant immune activation. Thus, the potential of NCD films for bone tissue regeneration can be further enhanced and tailored by B doping and that B doping up to metallic-like levels is not detrimental for cells. PMID:21695172

  18. Fano interference of the Raman phonon in heavily boron-doped diamond films grown by chemical vapor deposition

    SciTech Connect

    Ager, J.W. III; Walukiewicz, W.; McCluskey, M. ); Plano, M.A.; Landstrass, M.I. )

    1995-01-30

    A series of boron-doped polycrystalline diamond films grown by direct current and microwave plasma deposition was studied with Raman and infrared (IR) absorption spectroscopy. A Fano line shape is observed in the Raman spectra for films with a boron concentration in a narrow range near 10[sup 21] cm[sup [minus]3]. The appearance of the Fano line shape is correlated with the disappearance of discrete electronic transitions of the boron acceptor observed in the IR spectrum and the shift of the broadened peak to lower energy. The Fano interaction is attributed to a quantum mechanical interference between the Raman phonon (0.165 eV) and transitions from the broadened impurity band to continuum states composed of excited acceptor and valence band states.

  19. Enhanced selectivity of boron doped diamond electrodes for the detection of dopamine and ascorbic acid by increasing the film thickness

    NASA Astrophysics Data System (ADS)

    Qi, Yao; Long, Hangyu; Ma, Li; Wei, Quiping; Li, Site; Yu, Zhiming; Hu, Jingyuan; Liu, Peizhi; Wang, Yijia; Meng, Lingcong

    2016-12-01

    In this paper, boron doped diamond (BDD) with different thickness were prepared by hot filament chemical vapor deposition. The performance of BDD electrodes for detecting dopamine (DA) and ascorbic acid (AA) were investigated. Scanning electron microscopy and Raman spectra reveal the grain size increases and the film quality improves with the increase of film thickness. Electrochemical test show that the transfer coefficient in [Fe3 (CN) 6]3-/4- redox system increases with the increase of the film thickness. The results of selectivity and sensitivity for DA mixed with AA detection show that 8h-BDD and 12h-BDD electrodes possess well selective separated oxidation peaks of DA and AA, and the 12h-BDD electrode exhibits optimal sensitivity until the DA concentration drops to 1 μ M.

  20. Structural characteristics of surface-functionalized nitrogen-doped diamond-like carbon films and effective adjustment to cell attachment

    NASA Astrophysics Data System (ADS)

    Liu, Ai-Ping; Liu, Min; Yu, Jian-Can; Qian, Guo-Dong; Tang, Wei-Hua

    2015-05-01

    Nitrogen-doped diamond-like carbon (DLC:N) films prepared by the filtered cathodic vacuum arc technology are functionalized with various chemical molecules including dopamine (DA), 3-Aminobenzeneboronic acid (APBA), and adenosine triphosphate (ATP), and the impacts of surface functionalities on the surface morphologies, compositions, microstructures, and cell compatibility of the DLC:N films are systematically investigated. We demonstrate that the surface groups of DLC:N have a significant effect on the surface and structural properties of the film. The activity of PC12 cells depends on the particular type of surface functional groups of DLC:N films regardless of surface roughness and wettability. Our research offers a novel way for designing functionalized carbon films as tailorable substrates for biosensors and biomedical engineering applications. Project supported by the National Natural Science Foundation of China (Grant Nos. 51272237, 51272231, and 51010002) and the China Postdoctoral Science Foundation (Grant Nos. 2012M520063, 2013T60587, and Bsh1201016).

  1. Modification of the surface morphology of the silicon substrate for boron-doped diamond electrodes in electrochemical wastewater treatment applications

    NASA Astrophysics Data System (ADS)

    Bak, Ji-Yoon; Lee, Choong-Hyun; Kim, Jung-Do; Lim, Dae-Soon

    2016-01-01

    For electrochemical wastewater treatment applications, textured boron-doped diamond (BDD) electrodes were fabricated by using a simple and cost-effective etching process. On the basis of the surface area measurement, the etching time was optimized in order to achieve higher electrochemical wastewater treatment performance. The surface structure, electrochemical properties, and electrochemical oxidation performance of the electrodes were characterized by using Raman spectroscopy and atomic force microscopy, in addition to electrochemical techniques. The textured BDD electrode demonstrated a dense and large surface area with no change in the film's properties. The effective surface area of the textured BDD electrode was approximately twice as large as that of the planar BDD electrode. The electrochemical results clearly demonstrate that the enhanced surface area of the BDD electrode achieves a higher current efficiency and much lower energy consumption in the electrochemical oxidation of methyl-orange.

  2. In vivo pH monitoring using boron doped diamond microelectrode and silver needles: application to stomach disorder diagnosis.

    PubMed

    Fierro, Stéphane; Seishima, Ryo; Nagano, Osamu; Saya, Hideyuki; Einaga, Yasuaki

    2013-11-19

    This study presents the in vivo electrochemical monitoring of pH using boron doped diamond (BDD) microelectrode and silver needles for potential application in medical diagnosis. Accurate calibration curve for pH determination were obtained through in vitro electrochemical measurements. The increase induced in stomach pH by treatment with pantoprazole was used to demonstrate that it is possible to monitor the pH in vivo using the simple and noninvasive system proposed herein. Using the results of the in vivo and in vitro experiments, a quantitative analysis of the increase in stomach pH is also presented. It is proposed that the catheter-free pH monitoring system presented in this study could be potentially employed in any biological environment.

  3. Chemometric study on the electrochemical incineration of nitrilotriacetic acid using platinum and boron-doped diamond anode.

    PubMed

    Zhang, Chunyong; He, Zhenzhu; Wu, Jingyu; Fu, Degang

    2015-07-01

    This study investigated the electrochemical incineration of nitrilotriacetic acid (NTA) at boron-doped diamond (BDD) and platinum (Pt) anodes. Trials were performed in the presence of sulfate electrolyte media under recirculation mode. The parameters that influence the degradation efficiency were investigated, including applied current density, flow rate, supporting electrolyte concentration and reaction time. To reduce the number of experiments, the system had been managed under chemometric technique named Doehlert matrix. As a consequence, the mineralization of NTA demonstrated similar behavior upon operating parameters on these two anodes. Further kinetic study indicated that the degradations followed pseudo-first-order reactions for both BDD and Pt anodes, and the reaction rate constant of the former was found to be higher than that of the latter. Such difference could be interpreted by results from fractal analysis. In addition, a reaction sequence for NTA mineralization considering all the detected intermediates was also proposed.

  4. Voltammetric determination of mixtures of caffeine and chlorogenic acid in beverage samples using a boron-doped diamond electrode.

    PubMed

    Yardım, Yavuz; Keskin, Ertugrul; Şentürk, Zühre

    2013-11-15

    Herein, a boron-doped diamond (BDD) electrode that is anodically pretreated was used for the simultaneous determination of caffeine (CAF) and chlorogenic acid (CGA) by cyclic and adsorptive stripping voltammetry. The dependence of peak current and potential on pH, scan rate, accumulation parameters and other experimental variables were studied. By using square-wave stripping mode after 60 s accumulation under open-circuit voltage, the BDD electrode was able to separate the oxidation peak potentials of CAF and CGA present in binary mixtures by about 0.4V in Britton-Robinson buffer at pH 1.0. The limits of detection were 0.107 µg mL(-1) (5.51×10(-7) M) for CAF, and 0.448 µg mL(-1) (1.26×10(-6) M) for CGA. The practical applicability of this methodology was tested in commercially available beverage samples.

  5. Nickel nano-particle modified nitrogen-doped amorphous hydrogenated diamond-like carbon film for glucose sensing

    SciTech Connect

    Zeng, Aiping; Jin, Chunyan; Cho, Sang-Jin; Seo, Hyun Ook; Kim, Young Dok; Lim, Dong Chan; Kim, Doo Hwan; Hong, Byungyou; Boo, Jin-Hyo

    2012-10-15

    Electrochemical method has been employed in this work to modify nitrogen-doped hydrogen amorphous diamond-like carbon (N-DLC) film to fabricate nickel nano-particle-modified N-DLC electrodes. The electrochemical behavior of the nickel nano-particle-modified N-DLC electrodes has been characterized at the presence of glucose in electrolyte. Meanwhile, the N-DLC film structure and the morphology of metal nano-particles on the N-DLC surface have been investigated using micro-Raman spectroscopy and atomic force microscopy. The nickel nano-particle-modified N-DLC electrode exhibits a high catalytic activity and low background current. This result shows that the nickel nano-particle deposition on N-DLC surface could be a promising method to fabricate novel electrode materials for glucose sensing.

  6. Comparative surface and nano-tribological characteristics of nanocomposite diamond-like carbon thin films doped by silver

    SciTech Connect

    Zhang, Han-Shen; Endrino, Jose L.; Anders, Andre

    2008-07-10

    In this study we have deposited silver-containing hydrogenated and hydrogen-free diamond-like carbon (DLC) nanocomposite thin films by plasma immersion ion implantation-deposition methods. The surface and nano-tribological characteristics were studied by x-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM) and nano-scratching experiments. The silver doping was found to have no measurable effect on sp2-sp3 hybridization of the hydrogenated DLC matrix and only a slight effect on the hydrogen-free DLC matrix. The surface topography was analyzed by surface imaging. High- and low-order roughness determined by AFM characterization was correlated to the DLC growth mechanism and revealed the smoothing effect of silver. The nano-tribological characteristics were explained in terms of friction mechanisms and mechanical properties in correlation to the surface characteristics. It was discovered that the adhesion friction was the dominant friction mechanism; the adhesion force between the scratching tip and DLC surface was decreased by hydrogenation and increased by silver doping.

  7. Evaluation of freestanding boron-doped diamond grown by chemical vapour deposition as substrates for vertical power electronic devices

    SciTech Connect

    Issaoui, R.; Achard, J.; Tallaire, A.; Silva, F.; Gicquel, A.; Bisaro, R.; Servet, B.; Garry, G.; Barjon, J.

    2012-03-19

    In this study, 4 x 4 mm{sup 2} freestanding boron-doped diamond single crystals with thickness up to 260 {mu}m have been fabricated by plasma assisted chemical vapour deposition. The boron concentrations measured by secondary ion mass spectroscopy were 10{sup 18} to 10{sup 20} cm{sup -3} which is in a good agreement with the values calculated from Fourier transform infrared spectroscopy analysis, thus indicating that almost all incorporated boron is electrically active. The dependence of lattice parameters and crystal mosaicity on boron concentrations have also been extracted from high resolution x-ray diffraction experiments on (004) planes. The widths of x-ray rocking curves have globally shown the high quality of the material despite a substantial broadening of the peak, indicating a decrease of structural quality with increasing boron doping levels. Finally, the suitability of these crystals for the development of vertical power electronic devices has been confirmed by four-point probe measurements from which electrical resistivities as low as 0.26 {Omega} cm have been obtained.

  8. Microwave Plasma-Activated Chemical Vapor Deposition of Nitrogen-Doped Diamond. II: CH4/N2/H2 Plasmas

    PubMed Central

    2016-01-01

    , and [CN]ns of other reactive nitrogen-containing species by up to an order of magnitude. The ratio [N]ns/[CH3]ns scales proportionally with (but is 102–103 times smaller than) the ratio of the N2 to CH4 input mole fractions for the given values of p and P, but [N]ns/[CN]ns decreases (and thus the potential importance of CN in contributing to N-doped diamond growth increases) as p and P increase. Possible insights regarding the well-documented effects of trace N2 additions on the growth rates and morphologies of diamond films formed by CVD using MW-activated CH4/H2 gas mixtures are briefly considered. PMID:27718565

  9. A nitrogen doped low-dislocation density free-standing single crystal diamond plate fabricated by a lift-off process

    SciTech Connect

    Mokuno, Yoshiaki Kato, Yukako; Tsubouchi, Nobuteru; Chayahara, Akiyoshi; Yamada, Hideaki; Shikata, Shinichi

    2014-06-23

    A nitrogen-doped single crystal diamond plate with a low dislocation density is fabricated by chemical vapor deposition (CVD) from a high pressure high temperature synthetic type IIa seed substrate by ion implantation and lift-off processes. To avoid sub-surface damage, the seed surface was subjected to deep ion beam etching. In addition, we introduced a nitrogen flow during the CVD step to grow low-strain diamond at a relatively high growth rate. This resulted in a plate with low birefringence and a dislocation density as low as 400 cm{sup −2}, which is the lowest reported value for a lift-off plate. Reproducing this lift-off process may allow mass-production of single crystal CVD diamond plates with low dislocation density and consistent quality.

  10. Chemical bonding structural analysis of nitrogen-doped ultrananocrystalline diamond/hydrogenated amorphous carbon composite films prepared by coaxial arc plasma deposition

    NASA Astrophysics Data System (ADS)

    Gima, Hiroki; Zkria, Abdelrahman; Katamune, Yūki; Ohtani, Ryota; Koizumi, Satoshi; Yoshitake, Tsuyoshi

    2017-01-01

    Nitrogen-doped ultra-nanocrystalline diamond/hydrogenated amorphous carbon composite films prepared in hydrogen and nitrogen mixed-gas atmospheres by coaxial arc plasma deposition with graphite targets were studied electrically and chemical-bonding-structurally. The electrical conductivity was increased by nitrogen doping, accompanied by the production of n-type conduction. From X-ray photoemission, near-edge X-ray absorption fine-structure, hydrogen forward-scattering, and Fourier transform infrared spectral results, it is expected that hydrogen atoms that terminate diamond grain boundaries will be partially replaced by nitrogen atoms and, consequently, π C-N and C=N bonds that easily generate free electrons will be formed at grain boundaries.

  11. Structural, mechanical and hydrophobic properties of fluorine-doped diamond-like carbon films synthesized by plasma immersion ion implantation and deposition (PIII?D)

    NASA Astrophysics Data System (ADS)

    Yao, Zh. Q.; Yang, P.; Huang, N.; Sun, H.; Wang, J.

    2004-05-01

    Fluorine-doped diamond-like carbon (a-C:F) films with different fluorine content were fabricated on Si wafer by plasma immersion ion implantation and deposition (PIII-D). Film composition and structure were characterized by X-ray photoelectron spectroscopy (XPS) and Raman scattering spectroscopy. Surface morphology and roughness were analyzed by atomic force microscopy (AFM). Hardness and scratch resistance were measured by nano-indentation and nano-scratch, respectively. Water contact angles were measured by sessile drop method. With the increase of the CF 4 flux, fluorine content was gradually increased to the film. Raman spectra indicates that these films have a diamond-like structure. The addition of fluorine to diamond-like carbon films had a critical influence on the film properties. The film surface becomes more smoother due to the etching behavior of F +. Hardness was significantly reduced, while the scratch resistance results show that these films have a fairly good adhesion to the substrate. Evident improvements of the hydrophobicity have been made to these films, with contact angles of double-stilled water approaching that of polytetrafluoroethylene (PTFE). Our study suggests that broad application regions of the fluorine-doped amorphous carbon films with diamond-like structure, synthesized by PIII-D, can be extended by combining the non-wetting properties and mechanical properties which are far superior to those of PTFE.

  12. A Drude model analysis of conductivity and free carriers in boron-doped diamond films and investigations of their internal stress and strain

    PubMed Central

    Manciu, Marian; Durrer, William G.; Salazar, Jessica G.; Lee, Kendall H.; Bennet, Kevin E.

    2014-01-01

    Boron-doped diamond (BDD) has seen a substantial increase in interest for use as electrode coating material for electrochemistry and studies of deep brain stimulation mechanism. In this study, we present an alternative method for determining important characteristics, including conductivity, carrier concentration, and time constant, of such material by the signature of Drude-like metallic behavior in the far-infrared (IR) spectral range. Unlike the direct determination of conductivity from the four-point probe method, using far-IR transmittance provides additional information, such as whether the incorporation of boron results in a large concentration of carriers or in inducing defects in the diamond lattice. The slightly doped to medium-doped BDD samples that were produced using chemical vapor deposition and analyzed in this work show conductivities ranging between 5.5 and 11 (Ω cm)−1. Different growth conditions demonstrate that increasing boron concentration results in an increase in the carrier concentration, with values between 7.2 × 1016 and 2.5 × 1017 carriers/cm3. Addition of boron, besides leading to a decrease in the resistivity, also resulted in a decrease in the time constant, limiting BDD conductivity. Investigations, by confocal Raman mapping, of the induced stress in the material due to interaction with the substrate or to the amount of doping are also presented and discussed. The induced tensile stress, which was distributed closer to the film-substrate interface decreased slightly with doping. PMID:25328245

  13. Boron Doped diamond films as electron donors in photovoltaics: An X-ray absorption and hard X-ray photoemission study

    SciTech Connect

    Kapilashrami, M.; Zegkinoglou, I.; Conti, G.; Nemšák, S.; Conlon, C. S.; Fadley, C. S.; Törndahl, T.; Fjällström, V.; Lischner, J.; Louie, Steven G.; Hamers, R. J.; Zhang, L.; Guo, J.-H.; Himpsel, F. J.

    2014-10-14

    Highly boron-doped diamond films are investigated for their potential as transparent electron donors in solar cells. Specifically, the valence band offset between a diamond film (as electron donor) and Cu(In,Ga)Se₂ (CIGS) as light absorber is determined by a combination of soft X-ray absorption spectroscopy and hard X-ray photoelectron spectroscopy, which is more depth-penetrating than standard soft X-ray photoelectron spectroscopy. In addition, a theoretical analysis of the valence band is performed, based on GW quasiparticle band calculations. The valence band offset is found to be small: VBO=VBM{sub CIGS} – VBM{sub diamond}=0.3 eV±0.1 eV at the CIGS/Diamond interface and 0.0 eV±0.1 eV from CIGS to bulk diamond. These results provide a promising starting point for optimizing the band offset by choosing absorber materials with a slightly lower valence band maximum.

  14. Simultaneous voltammetric determination of paracetamol and ascorbic acid using a boron-doped diamond electrode modified with Nafion and lead films.

    PubMed

    Tyszczuk-Rotko, Katarzyna; Bęczkowska, Ilona; Wójciak-Kosior, Magdalena; Sowa, Ireneusz

    2014-11-01

    The paper describes the fabrication and application of a novel sensor (a boron-doped diamond electrode modified with Nafion and lead films) for the simultaneous determination of paracetamol and ascorbic acid by differential pulse voltammetry. The main advantage of the lead film and polymer covered boron-doped diamond electrode is that the sensitivity of the stripping responses is increased and the separation of paracetamol and ascorbic acid signals is improved due to the modification of the boron-doped diamond surface by the lead layer. Additionally, the repeatability of paracetamol and ascorbic acid signals is improved by the application of the Nafion film coating. In the presence of oxygen, linear calibration curves were obtained in a wide concentration range from 5×10(-7) to 2×10(-4) mol L(-1) for paracetamol and from 1×10(-6) to 5×10(-4) mol L(-1) for ascorbic acid. The analytical utility of the differential pulse voltammetric method elaborated was tested in the assay of paracetamol and ascorbic acid in commercially available pharmaceutical formulations and the method was validated by high performance liquid chromatography coupled with diode array detector.

  15. Superconductivity in diamond.

    PubMed

    Ekimov, E A; Sidorov, V A; Bauer, E D; Mel'nik, N N; Curro, N J; Thompson, J D; Stishov, S M

    2004-04-01

    Diamond is an electrical insulator well known for its exceptional hardness. It also conducts heat even more effectively than copper, and can withstand very high electric fields. With these physical properties, diamond is attractive for electronic applications, particularly when charge carriers are introduced (by chemical doping) into the system. Boron has one less electron than carbon and, because of its small atomic radius, boron is relatively easily incorporated into diamond; as boron acts as a charge acceptor, the resulting diamond is effectively hole-doped. Here we report the discovery of superconductivity in boron-doped diamond synthesized at high pressure (nearly 100,000 atmospheres) and temperature (2,500-2,800 K). Electrical resistivity, magnetic susceptibility, specific heat and field-dependent resistance measurements show that boron-doped diamond is a bulk, type-II superconductor below the superconducting transition temperature T(c) approximately 4 K; superconductivity survives in a magnetic field up to Hc2(0) > or = 3.5 T. The discovery of superconductivity in diamond-structured carbon suggests that Si and Ge, which also form in the diamond structure, may similarly exhibit superconductivity under the appropriate conditions.

  16. Assessments of the Effect of Increasingly Severe Cathodic Pretreatments on the Electrochemical Activity of Polycrystalline Boron-Doped Diamond Electrodes.

    PubMed

    Brocenschi, Ricardo F; Hammer, Peter; Deslouis, Claude; Rocha-Filho, Romeu C

    2016-05-17

    The electrochemical response of many redox species on boron-doped diamond (BDD) electrodes can be strongly dependent on the type of chemical termination on their surface, hydrogen (HT-BDD) or oxygen (OT-BDD). For instance, on an HT-BDD electrode the [Fe(CN)6](3-/4-) redox system presents a reversible voltammetric behavior, whereas the oxidation overpotential of ascorbic acid (AA) is significantly decreased. Moreover, the electrochemical activity of BDD electrodes can be significantly affected by electrochemical pretreatments, with cathodic pretreatments (CPTs) leading to redox behaviors associated with HT-BDD. Here we report on the effect of increasingly severe CPTs on the electrochemical activity of a highly doped BDD electrode, assessed with the [Fe(CN)6](3-/4-) and AA redox probes, and on the atomic bonding structure on the BDD surface, assessed by XPS. The hydrogenation level of the BDD surface was increased by CPTs, leading to decreases of the total relative level of oxidation of the BDD surface of up to 36%. Contrary to what is commonly assumed, we show that BDD surfaces do not need to be highly hydrogenated to ensure that a reversible voltammetric behavior is obtained for Fe(CN)6](3-/4-); after a CPT, this was attained even when the total relative level of oxidation on the BDD surface was about 15%. At the same time, the overpotential for AA oxidation was confirmed as being very sensitive to the level of oxidation of the BDD surface, a behavior that might allow the use of AA as a secondary indicator of the relative atomic bonding structure on the BDD surface.

  17. Oxidation of carbon monoxide, hydrogen peroxide and water at a boron doped diamond electrode: the competition for hydroxyl radicals.

    PubMed

    Kisacik, Izzet; Stefanova, Ana; Ernst, Siegfried; Baltruschat, Helmut

    2013-04-07

    Boron doped diamond (BDD) electrodes have an extremely high over-voltage for oxygen evolution from water, which favours its use in oxidation processes of other compounds at high potentials. We used a rotating ring disc (RRDE) assembly and differential electrochemical mass spectrometry (DEMS) in order to monitor the consumption or the production of species in the course of the electrode processes. By intercepting the intermediate of the electrochemical water oxidation with chemical reactions we demonstrate clearly, albeit indirectly, that in the water oxidation process at BDD above 2.5 V the first step is the formation of ˙OH radicals. The electro-oxidation of CO to CO2 at BDD electrodes proceeds only via a first attack by ˙OH radicals followed by a further electron transfer to the electrode. At potentials below the onset of oxygen evolution from water, H2O2 is oxidised by a direct electron transfer to the BDD electrode, while at higher potentials, two different reactions paths compete for the ˙OH radicals formed in the first electron transfer from water: one, where these ˙OH radicals react with each other followed by further electron transfers leading to O2 on the one hand and one, where ˙OH radicals react with other species like H2O2 or CO with subsequent electron transfers on the other hand.

  18. Biofouling resistance of boron-doped diamond neural stimulation electrodes is superior to titanium nitride electrodes in vivo

    NASA Astrophysics Data System (ADS)

    Meijs, S.; Alcaide, M.; Sørensen, C.; McDonald, M.; Sørensen, S.; Rechendorff, K.; Gerhardt, A.; Nesladek, M.; Rijkhoff, N. J. M.; Pennisi, C. P.

    2016-10-01

    Objective. The goal of this study was to assess the electrochemical properties of boron-doped diamond (BDD) electrodes in relation to conventional titanium nitride (TiN) electrodes through in vitro and in vivo measurements. Approach. Electrochemical impedance spectroscopy, cyclic voltammetry and voltage transient (VT) measurements were performed in vitro after immersion in a 5% albumin solution and in vivo after subcutaneous implantation in rats for 6 weeks. Main results. In contrast to the TiN electrodes, the capacitance of the BDD electrodes was not significantly reduced in albumin solution. Furthermore, BDD electrodes displayed a decrease in the VTs and an increase in the pulsing capacitances immediately upon implantation, which remained stable throughout the whole implantation period, whereas the opposite was the case for the TiN electrodes. Significance. These results reveal that BDD electrodes possess a superior biofouling resistance, which provides significantly stable electrochemical properties both in protein solution as well as in vivo compared to TiN electrodes.

  19. An aptasensor for ochratoxin A based on grafting of polyethylene glycol on a boron-doped diamond microcell.

    PubMed

    Chrouda, A; Sbartai, A; Baraket, A; Renaud, L; Maaref, A; Jaffrezic-Renault, N

    2015-11-01

    A novel strategy for the fabrication of an electrochemical label-free aptasensor for small-size molecules is proposed and demonstrated as an aptasensor for ochratoxin A (OTA). A long spacer chain of polyethylene glycol (PEG) was immobilized on a boron-doped diamond (BDD) microcell via electrochemical oxidation of its terminal amino groups. The amino-aptamer was then covalently linked to the carboxyl end of the immobilized PEG as a two-piece macromolecule, autoassembled at the BDD surface, forming a dense layer. Due to a change in conformation of the aptamer on the target analyte binding, a decrease of the electron transfer rate of the redox [Fe(CN)6](4-/3-) probe was observed. To quantify the amount of OTA, the decrease of the square wave voltammetry (SWV) peak maximum of this probe was monitored. The plot of the peak maximum against the logarithm of OTA concentration was linear along the range from 0.01 to 13.2 ng/L, with a detection limit of 0.01 ng/L. This concept was validated on spiked real samples of rice.

  20. Experimental Approach to Controllably Vary Protein Oxidation While Minimizing Electrode Adsorption for Boron-Doped Diamond Electrochemical Surface Mapping Applications

    SciTech Connect

    McClintock, Carlee; Hettich, Robert {Bob} L

    2013-01-01

    Oxidative protein surface mapping has become a powerful approach for measuring the solvent accessibility of folded protein structures. A variety of techniques exist for generating the key reagent hydroxyl radicals for these measurements; however, many of these approaches require use of radioactive sources or caustic oxidizing chemicals. The purpose of this research was to evaluate and optimize the use of boron-doped diamond (BDD) electrochemistry as a highly accessible tool for producing hydroxyl radicals as a means to induce a controllable level of oxidation on a range of intact proteins. These experiments utilize a relatively high flow rates to reduce protein residence time inside the electrochemical flow chamber, along with a unique cell activation approach to improve control over the intact protein oxidation yield. Studies were conducted to evaluate the level of protein adsorption onto the electrode surface. This report demonstrates a robust protocol for the use of BDD electrochemistry and high performance LC-MS/MS as a high-throughput experimental pipeline for probing higher order protein structure, and illustrates how it is complementary to predictive computational modeling efforts.

  1. Toward high-throughput screening of NAD(P)-dependent oxidoreductases using boron-doped diamond microelectrodes and microfluidic devices.

    PubMed

    Oyobiki, Ryo; Kato, Taisuke; Katayama, Michinobu; Sugitani, Ai; Watanabe, Takeshi; Einaga, Yasuaki; Matsumoto, Yoshinori; Horisawa, Kenichi; Doi, Nobuhide

    2014-10-07

    Although oxidoreductases are widely used in many applications, such as biosensors and biofuel cells, improvements in the function of existing oxidoreductases or the discovery of novel oxidoreductases with greater activities is desired. To increase the activity of oxidoreductases by directed evolution, a powerful screening technique for oxidoreductases is required. In this study, we demonstrate the utility of boron-doped diamond (BDD) microelectrodes for quantitative and potentially high-throughput measurement of the activity of NAD(P)-dependent oxidoreductases. We first confirmed that BDD microelectrodes can quantify the activity of low concentrations (10-100 pM) of glucose-6-phosphate dehydrogenase and alcohol dehydrogenase with a measuring time of 1 ms per sample. In addition, we found that poisoning of BDD microelectrodes can be repressed by optimizing the pH and by adding l-arginine to the enzyme solution as an antiaggregation agent. Finally, we fabricated a microfluidic device containing a BDD electrode for the first time and observed the elevation of the oxidation current of NADH with increasing flow rate. These results imply that the combination of a BDD microelectrode and microfluidics can be used for high-throughput screening of an oxidoreductase library containing a large number (>10(6)) of samples, each with a small (nanoliter) sample volume.

  2. Simultaneous square-wave voltammetric determination of aspartame and cyclamate using a boron-doped diamond electrode.

    PubMed

    Medeiros, Roberta Antigo; de Carvalho, Adriana Evaristo; Rocha-Filho, Romeu C; Fatibello-Filho, Orlando

    2008-07-30

    A simple and highly selective electrochemical method was developed for the simultaneous determination of aspartame and cyclamate in dietary products at a boron-doped diamond (BDD) electrode. In square-wave voltammetric (SWV) measurements, the BDD electrode was able to separate the oxidation peak potentials of aspartame and cyclamate present in binary mixtures by about 400 mV. The detection limit for aspartame in the presence of 3.0x10(-4) mol L(-1) cyclamate was 4.7x10(-7) mol L(-1), and the detection limit for cyclamate in the presence of 1.0x10(-4) mol L(-1) aspartame was 4.2x10(-6) mol L(-1). When simultaneously changing the concentration of both aspartame and cyclamate in a 0.5 mol L(-1) sulfuric acid solution, the corresponding detection limits were 3.5x10(-7) and 4.5x10(-6) mol L(-1), respectively. The relative standard deviation (R.S.D.) obtained was 1.3% for the 1.0x10(-4) mol L(-1) aspartame solution (n=5) and 1.1% for the 3.0x10(-3) mol L(-1) cyclamate solution. The proposed method was successfully applied in the determination of aspartame in several dietary products with results similar to those obtained using an HPLC method at 95% confidence level.

  3. Electrochemical degradation of a real textile effluent using boron-doped diamond or β-PbO2 as anode.

    PubMed

    Aquino, José M; Pereira, Gabriel F; Rocha-Filho, Romeu C; Bocchi, Nerilso; Biaggio, Sonia R

    2011-09-15

    Constant current electrolyses are carried out in a filter-press reactor using a boron-doped diamond (Nb/BDD) or a Ti-Pt/β-PbO(2) anode, varying current density (j) and temperature. The degradation of the real textile effluent is followed by its decolorization and chemical oxygen demand (COD) abatement. The effect of adding NaCl (1.5 g L(-1)) on the degradation of the effluent is also investigated. The Nb/BDD anode yields much higher decolorization (attaining the DFZ limit) and COD-abatement rates than the Ti-Pt/β-PbO(2) anode, at any experimental condition. The best conditions are j = 5 mA cm(-2) and 55 °C, for the system's optimized hydrodynamic conditions. The addition of chloride ions significantly increases the decolorization rate; thus a decrease of more than 90% of the effluent relative absorbance is attained using an applied electric charge per unit volume of the electrolyzed effluent (Q(ap)) of only about 2 kA h m(-3). Practically total abatement of the effluent COD is attained with the Nb/BDD anode using a Q(ap) value of only 7 kA h m(-3), with an energy consumption of about 30 kW h m(-3). This result allows to conclude that the Nb/BDD electrode might be an excellent option for the remediation of textile effluents.

  4. Removal of organic contaminants from secondary effluent by anodic oxidation with a boron-doped diamond anode as tertiary treatment.

    PubMed

    Garcia-Segura, Sergi; Keller, Jürg; Brillas, Enric; Radjenovic, Jelena

    2015-01-01

    Electrochemical advanced oxidation processes (EAOPs) have been widely investigated as promising technologies to remove trace organic contaminants from water, but have rarely been used for the treatment of real waste streams. Anodic oxidation with a boron-doped diamond (BDD) anode was applied for the treatment of secondary effluent from a municipal sewage treatment plant containing 29 target pharmaceuticals and pesticides. The effectiveness of the treatment was assessed from the contaminants decay, dissolved organic carbon and chemical oxygen demand removal. The effect of applied current and pH was evaluated. Almost complete mineralization of effluent organic matter and trace contaminants can be obtained by this EAOP primarily due to the action of hydroxyl radicals formed at the BDD surface. The oxidation of Cl(-) ions present in the wastewater at the BDD anode gave rise to active chlorine species (Cl2/HClO/ClO(-)), which are competitive oxidizing agents yielding chloramines and organohalogen byproducts, quantified as adsorbable organic halogen. However, further anodic oxidation of HClO/ClO(-) species led to the production of ClO3(-) and ClO4(-) ions. The formation of these species hampers the application as a single-stage tertiary treatment, but posterior cathodic reduction of chlorate and perchlorate species may reduce the risks associated to their presence in the environment.

  5. Electrochemical Sensing and Assessment of Parabens in Hydro- Alcoholic Solutions and Water Using a Boron-Doped Diamond Electrode.

    PubMed

    Radovan, Ciprian; Cinghită, Dan; Manea, Florica; Mincea, Manuela; Cofan, Codruta; Ostafe, Vasile

    2008-07-25

    In this paper, the electrochemical behaviour of several parabens preservatives, i.e. esters of p-hydroxybenzoic acid, methyl-, ethyl- and propyl-4-hydroxybenzoates as methyl-, ethyl- and propyl-parabens (MB, EB, and PB), has been investigated at a commercial boron-doped diamond electrode (BDDE), especially in the anodic potential range, in both hydro-alcoholic and aqueous media. The cyclic voltammetric and chronoamperometric measurements yielded calibration plots with very good linearity (R2 between 0.990 and 0.998) and high sensitivity, useful for detection and analytical applications. The determination of the characteristics of individual compounds, of an "overall paraben index", the assessment of the stability and the saturation solubility in water, and the amperometric sensing and determination in double distilled, tap and river water matrix of the relatively slightly soluble investigated parabens have been carried out using electrochemical alternative. Estimated water solubility was correlated with the octanol-water partition coefficient. Several ideas regarding stability and persistence of the presumptive eco-toxic investigated preservatives in the environment or water systems have been adjacently discussed.

  6. Sensitive voltammetric determination of thymol in essential oil of Carum copticum seeds using boron-doped diamond electrode.

    PubMed

    Stanković, Dalibor M

    2015-10-01

    Essential oil of Carum copticum seeds, obtained from a local shop, was extracted and content of thymol was analyzed using square-wave voltammetry at boron-doped diamond electrode. The effect of various parameters, such as pH of supporting electrolyte and square-wave voltammetric parameters (modulation amplitude and frequency), was examined. In Britton-Robinson buffer solution (pH 4), thymol provided a single and oval-shaped irreversible oxidation peak at +1.13 V versus silver/silver chloride potassium electrode (3M). Under optimal experimental conditions, a plot of peak height against concentration of thymol was found to be linear over the range of 4 to 100μM consisting of two linear ranges: from 4 to 20μM (R(2)=0.9964) and from 20 to 100μM (R(2)=0.9993). The effect of potential interferences such as p-cymene and γ-terpinene (major components in essential oil of C. copticum seeds) was evaluated. Thus, the proposed method displays a sufficient selectivity toward thymol with a detection limit of 3.9μM, and it was successfully applied for the determination of thymol in essential oil of C. copticum seeds. The Prussian blue method was used for validation of the proposed electroanalytical method.

  7. Boron doped diamond sensor for sensitive determination of metronidazole: Mechanistic and analytical study by cyclic voltammetry and square wave voltammetry.

    PubMed

    Ammar, Hafedh Belhadj; Brahim, Mabrouk Ben; Abdelhédi, Ridha; Samet, Youssef

    2016-02-01

    The performance of boron-doped diamond (BDD) electrode for the detection of metronidazole (MTZ) as the most important drug of the group of 5-nitroimidazole was proven using cyclic voltammetry (CV) and square wave voltammetry (SWV) techniques. A comparison study between BDD, glassy carbon and silver electrodes on the electrochemical response was carried out. The process is pH-dependent. In neutral and alkaline media, one irreversible reduction peak related to the hydroxylamine derivative formation was registered, involving a total of four electrons. In acidic medium, a prepeak appears probably related to the adsorption affinity of hydroxylamine at the electrode surface. The BDD electrode showed higher sensitivity and reproducibility analytical response, compared with the other electrodes. The higher reduction peak current was registered at pH11. Under optimal conditions, a linear analytical curve was obtained for the MTZ concentration in the range of 0.2-4.2μmolL(-1), with a detection limit of 0.065μmolL(-1).

  8. Highly Sensitive Measurement of Bio-Electric Potentials by Boron-Doped Diamond (BDD) Electrodes for Plant Monitoring.

    PubMed

    Ochiai, Tsuyoshi; Tago, Shoko; Hayashi, Mio; Fujishima, Akira

    2015-10-23

    We describe a sensitive plant monitoring system by the detection of the bioelectric potentials in plants with boron-doped diamond (BDD) electrodes. For sensor electrodes, we used commercially available BDD, Ag, and Pt plate electrodes. We tested this approach on a hybrid species in the genus Opuntia (potted) and three different trees (ground-planted) at different places in Japan. For the Opuntia, we artificially induced bioelectric potential changes by the surface potential using the fingers. We detected substantial changes in bioelectric potentials through all electrodes during finger touches on the surface of potted Opuntia hybrid plants, although the BDD electrodes were several times more sensitive to bioelectric potential change compared to the other electrodes. Similarly for ground-planted trees, we found that both BDD and Pt electrodes detected bioelectric potential change induced by changing environmental factors (temperature and humidity) for months without replacing/removing/changing electrodes, BDD electrodes were 5-10 times more sensitive in this detection than Pt electrodes. Given these results, we conclude that BDD electrodes on live plant tissue were able to consistently detect bioelectrical potential changes in plants.

  9. Electrochemical Sensing and Assessment of Parabens in Hydro-Alcoholic Solutions and Water Using a Boron-Doped Diamond Electrode

    PubMed Central

    Radovan, Ciprian; Cinghiță, Dan; Manea, Florica; Mincea, Manuela; Cofan, Codruța; Ostafe, Vasile

    2008-01-01

    In this paper, the electrochemical behaviour of several parabens preservatives, i.e. esters of p-hydroxybenzoic acid, methyl-, ethyl- and propyl-4-hydroxybenzoates as methyl-, ethyl- and propyl-parabens (MB, EB, and PB), has been investigated at a commercial boron-doped diamond electrode (BDDE), especially in the anodic potential range, in both hydro-alcoholic and aqueous media. The cyclic voltammetric and chronoamperometric measurements yielded calibration plots with very good linearity (R2 between 0.990 and 0.998) and high sensitivity, useful for detection and analytical applications. The determination of the characteristics of individual compounds, of an “overall paraben index”, the assessment of the stability and the saturation solubility in water, and the amperometric sensing and determination in double distilled, tap and river water matrix of the relatively slightly soluble investigated parabens have been carried out using electrochemical alternative. Estimated water solubility was correlated with the octanol-water partition coefficient. Several ideas regarding stability and persistence of the presumptive eco-toxic investigated preservatives in the environment or water systems have been adjacently discussed. PMID:27879939

  10. Electrochemical analysis of chloramphenicol using boron-doped diamond electrode applied to a flow-injection system.

    PubMed

    Chuanuwatanakul, Suchada; Chailapakul, Orawon; Motomizu, Shoji

    2008-04-01

    The electrochemical properties of chloramphenicol at a boron-doped diamond thin-film (BDD) electrode were studied using cyclic voltammetry. The highest current response of chloramphenicol was obtained with phosphate buffer, pH 6 (0.1 M) in 1% ethanol. The relationship between the concentration of chloramphenicol and the current response was linear over the range of 0.1-10 mM (R2=0.9990). The amount of chloramphenicol was analyzed by flow-injection analysis. A thin-layer flow cell equipped with a BDD electrode was used as an amperometric detector, and experiments were carried out at -0.7 V (vs. Ag/AgCl). The linear relationship between the current response and the concentration of chloramphenicol in the range of 0.1-50 microM (R2=0.9948) and the limit of detection of 0.03 microM (S/N=3) were obtained. This method has been successfully applied to the determination of chloramphenicol in sterile eye drops and milk sample by the standard addition method. The average recoveries of chloramphenicol in eye drops were 98.0%, and the average recoveries of chloramphenicol from spiked milk were 93.9-103%.

  11. Highly Sensitive Measurement of Bio-Electric Potentials by Boron-Doped Diamond (BDD) Electrodes for Plant Monitoring

    PubMed Central

    Ochiai, Tsuyoshi; Tago, Shoko; Hayashi, Mio; Fujishima, Akira

    2015-01-01

    We describe a sensitive plant monitoring system by the detection of the bioelectric potentials in plants with boron-doped diamond (BDD) electrodes. For sensor electrodes, we used commercially available BDD, Ag, and Pt plate electrodes. We tested this approach on a hybrid species in the genus Opuntia (potted) and three different trees (ground-planted) at different places in Japan. For the Opuntia, we artificially induced bioelectric potential changes by the surface potential using the fingers. We detected substantial changes in bioelectric potentials through all electrodes during finger touches on the surface of potted Opuntia hybrid plants, although the BDD electrodes were several times more sensitive to bioelectric potential change compared to the other electrodes. Similarly for ground-planted trees, we found that both BDD and Pt electrodes detected bioelectric potential change induced by changing environmental factors (temperature and humidity) for months without replacing/removing/changing electrodes, BDD electrodes were 5–10 times more sensitive in this detection than Pt electrodes. Given these results, we conclude that BDD electrodes on live plant tissue were able to consistently detect bioelectrical potential changes in plants. PMID:26512663

  12. Electrochemical degradation of the antihypertensive losartan in aqueous medium by electro-oxidation with boron-doped diamond electrode.

    PubMed

    Salazar, Claudio; Contreras, Nicole; Mansilla, Héctor D; Yáñez, Jorge; Salazar, Ricardo

    2016-12-05

    In this work the electrochemical oxidation of losartan, an emerging pharmaceutical pollutant, was studied. Electrochemical oxidation was carried out in batch mode, in an open and undivided cell of 100cm(3) using a boron-doped diamond (BDD)/stainless steel system. With Cl(-) medium 56% of mineralization was registered, while with the trials containing SO4(2-) as supporting electrolyte a higher mineralization yield of 67% was reached, even obtaining a total removal of losartan potassium at 80mAcm(-2) and 180min of reaction time at pH 7.0. Higher losartan potassium concentrations enhanced the mineralization degree and the efficiency of the electrochemical oxidation process. During the mineralization up to 4 aromatic intermediates were identified by ultra high performance liquid chromatography tandem mass spectrometry (UHPLC-MS/MS). Moreover, short-linear carboxylic acids, like oxalic, succinic and oxamic were detected and quantified by ion-exclusion HPLC. Finally, the ability of the electrochemical oxidation process to mineralize dissolved commercial tablets containing losartan was achieved, obtaining TOC removal up to 71% under optimized conditions (10mAcm(-2), 0.05M Na2SO4, pH 7.0 and 25°C and 360min of electrolysis).

  13. Determination of vanillin in commercial food product by adsorptive stripping voltammetry using a boron-doped diamond electrode.

    PubMed

    Yardım, Yavuz; Gülcan, Mehmet; Şentürk, Zühre

    2013-12-01

    A method for the determination of food additive vanillin was developed by adsorptive stripping voltammetry. Its determination was carried out at the anodically pre-treated boron-doped diamond electrode in aqueous solutions. Using square-wave stripping mode, the compound yielded a well-defined voltammetric response in phosphate buffer, pH 2.5 at +1.14 V (vs. Ag/AgCl) (a pre-concentration step being carried out at open-circuit condition for 60s). A linear calibration graph was obtained in the concentration range of 0.5-15.0 μg mL(-1) (3.3×10(-6)-9.8×10(-5) mol L(-1)) with a detection limit of 0.024 μg mL(-1) (1.6×10(-7) mol L(-1)). As an example, the practical applicability of the proposed method was tested for the determination of this flavouring agent in commercial pudding powder of Keshkule (Turkish milk pudding with almond flour).

  14. Anodic stripping voltammetry of gold nanoparticles at boron-doped diamond electrodes and its application in immunochromatographic strip tests.

    PubMed

    Ivandini, Tribidasari A; Wicaksono, Wiyogo P; Saepudin, Endang; Rismetov, Bakhadir; Einaga, Yasuaki

    2015-03-01

    Anodic stripping voltammetry (ASV) of colloidal gold-nanoparticles (AuNPs) was investigated at boron-doped diamond (BDD) electrodes in 50 mM HClO4. A deposition time of 300 s at-0.2 V (vs. Ag/AgCl) was fixed as the condition for the ASV. The voltammograms showed oxidation peaks that could be attributed to the oxidation of gold. These oxidation peaks were then investigated for potential application in immunochromatographic strip tests for the selective and quantitative detection of melamine, in which AuNPs were used as the label for the antibody of melamine. Linear regression of the oxidation peak currents appeared in the concentration range from 0.05-0.6 μg/mL melamine standard, with an estimated LOD of 0.069 μg/mL and an average relative standard deviation of 8.0%. This indicated that the method could be considered as an alternative method for selective and quantitative immunochromatographic applications. The validity was examined by the measurements of melamine injected into milk samples, which showed good recovery percentages during the measurements.

  15. Highly sensitive detection of influenza virus by boron-doped diamond electrode terminated with sialic acid-mimic peptide

    PubMed Central

    Matsubara, Teruhiko; Ujie, Michiko; Yamamoto, Takashi; Akahori, Miku; Einaga, Yasuaki; Sato, Toshinori

    2016-01-01

    The progression of influenza varies according to age and the presence of an underlying disease; appropriate treatment is therefore required to prevent severe disease. Anti-influenza therapy, such as with neuraminidase inhibitors, is effective, but diagnosis at an early phase of infection before viral propagation is critical. Here, we show that several dozen plaque-forming units (pfu) of influenza virus (IFV) can be detected using a boron-doped diamond (BDD) electrode terminated with a sialic acid-mimic peptide. The peptide was used instead of the sialyloligosaccharide receptor, which is the common receptor of influenza A and B viruses required during the early phase of infection, to capture IFV particles. The peptide, which was previously identified by phage-display technology, was immobilized by click chemistry on the BDD electrode, which has excellent electrochemical characteristics such as low background current and weak adsorption of biomolecules. Electrochemical impedance spectroscopy revealed that H1N1 and H3N2 IFVs were detectable in the range of 20–500 pfu by using the peptide-terminated BDD electrode. Our results demonstrate that the BDD device integrated with the receptor-mimic peptide has high sensitivity for detection of a low number of virus particles in the early phase of infection. PMID:27457924

  16. Electrochemical oxidation of tramadol in low-salinity reverse osmosis concentrates using boron-doped diamond anodes.

    PubMed

    Lütke Eversloh, Christian; Schulz, Manoj; Wagner, Manfred; Ternes, Thomas A

    2015-04-01

    The electrochemical treatment of low-salinity reverse osmosis (RO) concentrates was investigated using tramadol (100 μM) as a model substance for persistent organic contaminants. Galvanostatic degradation experiments using boron-doped diamond electrodes at different applied currents were conducted in RO concentrates as well as in ultra-pure water containing either sodium chloride or sodium sulfate. Kinetic investigations revealed a significant influence of in-situ generated active chlorine besides direct anodic oxidation. Therefore, tramadol concentrations decreased more rapidly at elevated chloride content. Nevertheless, reduction of total organic carbon (TOC) was found to be comparatively low, demonstrating that transformation rather than mineralization was taking place. Early stage product formation could be attributed to both direct and indirect processes, including demethylation, hydroxylation, dehydration, oxidative aromatic ring cleavage and halogenation reactions. The latter led to various halogenated derivatives and resulted in AOX (adsorbable organic halogens) formation in the lower mg/L-range depending on the treatment conditions. Characterisation of transformation products (TPs) was achieved via MS(n) experiments and additional NMR measurements. Based on identification and quantification of the main TPs in different matrices and on additional potentiostatic electrolysis, a transformation pathway was proposed.

  17. Electrochemical disinfection using boron-doped diamond electrode--the synergetic effects of in situ ozone and free chlorine generation.

    PubMed

    Rajab, Mohamad; Heim, Carolin; Letzel, Thomas; Drewes, Jörg E; Helmreich, Brigitte

    2015-02-01

    This work investigated the capability of using a boron-doped diamond (BDD) electrode for bacterial disinfection in different water matrices containing varying amounts of chloride. The feed water containing Pseudomonas aeruginosa was electrochemically treated while applying different electrode conditions. Depending on the applied current density and the exposure time, inactivation between 4- and 8-log of the targeted microorganisms could be achieved. The disinfection efficiency was driven by the generation of free chlorine as a function of chloride concentration in the water. A synergetic effect of generating both free chlorine and ozone in situ during the disinfection process resulted in an effective bactericidal impact. The formation of the undesired by-products chlorate and perchlorate depended on the water matrix, the applied current density and the desired target disinfection level. In case of synthetic water with a low chloride concentration (20 mg L(-1)) and an applied current density of 167 mA cm(-2), a 6-log inactivation of Pseudomonas aeruginosa could be achieved after 5 min of exposure. The overall energy consumption ranged between 0.3 and 0.6 kW h m(-3) depending on the applied current density and water chemistry. Electrochemical water disinfection represents a suitable and efficient process for producing pathogen-free water without the use of any chemicals.

  18. Synergetic antibacterial activity of reduced graphene oxide and boron doped diamond anode in three dimensional electrochemical oxidation system

    NASA Astrophysics Data System (ADS)

    Qi, Xiujuan; Wang, Ting; Long, Yujiao; Ni, Jinren

    2015-05-01

    A 100% increment of antibacterial ability has been achieved due to significant synergic effects of boron-doped diamond (BDD) anode and reduced graphene oxide (rGO) coupled in a three dimensional electrochemical oxidation system. The rGO, greatly enhanced by BDD driven electric field, demonstrated strong antibacterial ability and even sustained its excellent performance during a reasonable period after complete power cut in the BDD-rGO system. Cell damage experiments and TEM observation confirmed much stronger membrane stress in the BDD-rGO system, due to the faster bacterial migration and charge transfer by the expanded electro field and current-carrying efficiency by quantum tunnel. Reciprocally the hydroxyl-radical production was eminently promoted with expanded area of electrodes and delayed recombination of the electron-hole pairs in presence of the rGO in the system. This implied a huge potential for practical disinfection with integration of the promising rGO and the advanced electrochemical oxidation systems.

  19. Application of electrochemical technology for removing petroleum hydrocarbons from produced water using lead dioxide and boron-doped diamond electrodes.

    PubMed

    Gargouri, Boutheina; Gargouri, Olfa Dridi; Gargouri, Bochra; Trabelsi, Souhel Kallel; Abdelhedi, Ridha; Bouaziz, Mohamed

    2014-12-01

    Although diverse methods exist for treating polluted water, the most promising and innovating technology is the electrochemical remediation process. This paper presents the anodic oxidation of real produced water (PW), generated by the petroleum exploration of the Petrobras plant-Tunisia. Experiments were conducted at different current densities (30, 50 and 100 mA cm(-2)) using the lead dioxide supported on tantalum (Ta/PbO2) and boron-doped diamond (BDD) anodes in an electrolytic batch cell. The electrolytic process was monitored by the chemical oxygen demand (COD) and the residual total petroleum hydrocarbon [TPH] in order to know the feasibility of electrochemical treatment. The characterization and quantification of petroleum wastewater components were performed by gas chromatography mass spectrometry. The COD removal was approximately 85% and 96% using PbO2 and BDD reached after 11 and 7h, respectively. Compared with PbO2, the BDD anode showed a better performance to remove petroleum hydrocarbons compounds from produced water. It provided a higher oxidation rate and it consumed lower energy. However, the energy consumption and process time make useless anodic oxidation for the complete elimination of pollutants from PW. Cytotoxicity has shown that electrochemical oxidation using BDD could be efficiently used to reduce more than 90% of hydrocarbons compounds. All results suggest that electrochemical oxidation could be an effective approach to treat highly concentrated organic pollutants present in the industrial petrochemical wastewater and significantly reduce the cost and time of treatment.

  20. Biophotonic low-coherence sensors with boron-doped diamond thin layer

    NASA Astrophysics Data System (ADS)

    Milewska, D.; Karpienko, K.; Sobaszek, M.; Jedrzejewska-Szczerska, M.

    2016-03-01

    Low-coherence sensors using Fabry-Perot interferometers are finding new applications in biophotonic sensing, especially due to the rapid technological advances in the development of new materials. In this paper we discuss the possibility of using boron-doped nanodiamond layers to protect mirror in a Fabry-Perot interferometer. A low-coherence sensor using Fabry-Perot interferometer with a boron-doped nanodiamond (B-NCD) thin protective layer has been developed. B-NCD layers with different boron doping level were investigated. The boron level, expressed as the boron to carbon (/[C]) ratio in the gas phase, was: 0, 2000, 5000 or 10000 ppm. B-NCD layers were grown by chemical vapor deposition (CVD). The sensing Fabry-Perot interferometer, working in the reflective mode, was connected to the source and to the optical processor by single-mode fibers. Superluminescent diodes with Gaussian spectral density were used as sources, while an optical spectrum analyzer was used as an optical processor. The design of the sensing interferometer was optimized to attain the maximum interference contrast. The experiment has shown that B-NCD thin layers can be successfully used in biophotonic sensors.

  1. High efficiency diamond solar cells

    DOEpatents

    Gruen, Dieter M.

    2008-05-06

    A photovoltaic device and method of making same. A layer of p-doped microcrystalline diamond is deposited on a layer of n-doped ultrananocrystalline diamond such as by providing a substrate in a chamber, providing a first atmosphere containing about 1% by volume CH.sub.4 and about 99% by volume H.sub.2 with dopant quantities of a boron compound, subjecting the atmosphere to microwave energy to deposit a p-doped microcrystalline diamond layer on the substrate, providing a second atmosphere of about 1% by volume CH.sub.4 and about 89% by volume Ar and about 10% by volume N.sub.2, subjecting the second atmosphere to microwave energy to deposit a n-doped ultrananocrystalline diamond layer on the p-doped microcrystalline diamond layer. Electrodes and leads are added to conduct electrical energy when the layers are irradiated.

  2. Ellipsometric investigation of nitrogen doped diamond thin films grown in microwave CH4/H2/N2 plasma enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Ficek, Mateusz; Sankaran, Kamatchi J.; Ryl, Jacek; Bogdanowicz, Robert; Lin, I.-Nan; Haenen, Ken; Darowicki, Kazimierz

    2016-06-01

    The influence of N2 concentration (1%-8%) in CH4/H2/N2 plasma on structure and optical properties of nitrogen doped diamond (NDD) films was investigated. Thickness, roughness, and optical properties of the NDD films in the VIS-NIR range were investigated on the silicon substrates using spectroscopic ellipsometry. The samples exhibited relatively high refractive index (2.6 ± 0.25 at 550 nm) and extinction coefficient (0.05 ± 0.02 at 550 nm) with a transmittance of 60%. The optical investigation was supported by the molecular and atomic data delivered by Raman studies, bright field transmission electron microscopy imaging, and X-ray photoelectron spectroscopy diagnostics. Those results revealed that while the films grown in CH4/H2 plasma contained micron-sized diamond grains, the films grown using CH4/H2/(4%)N2 plasma exhibited ultranano-sized diamond grains along with n-diamond and i-carbon clusters, which were surrounded by amorphous carbon grain boundaries.

  3. Adhesion and differentiation of Saos-2 osteoblast-like cells on chromium-doped diamond-like carbon coatings.

    PubMed

    Filova, Elena; Vandrovcova, Marta; Jelinek, Miroslav; Zemek, Josef; Houdkova, Jana; Jan Remsa; Kocourek, Tomas; Stankova, Lubica; Bacakova, Lucie

    2017-01-01

    Diamond-like carbon (DLC) thin films are promising for use in coating orthopaedic, dental and cardiovascular implants. The problem of DLC layers lies in their weak layer adhesion to metal implants. Chromium is used as a dopant for improving the adhesion of DLC films. Cr-DLC layers were prepared by a hybrid technology, using a combination of pulsed laser deposition (PLD) from a graphite target and magnetron sputtering. Depending on the deposition conditions, the concentration of Cr in the DLC layers moved from zero to 10.0 at.%. The effect of DLC layers with 0.0, 0.9, 1.8, 7.3, 7.7 and 10.0 at.% Cr content on the adhesion and osteogenic differentiation of human osteoblast-like Saos-2 cells was assessed in vitro. The DLC samples that contained 7.7 and 10.0 at.% of Cr supported cell spreading on day 1 after seeding. On day three after seeding, the most apparent vinculin-containing focal adhesion plaques were also found on samples with higher concentrations of chromium. On the other hand, the expression of type I collagen and alkaline phosphatase at the mRNA and protein level was the highest on Cr-DLC samples with a lower concentration of Cr (0-1.8 at.%). We can conclude that higher concentrations of chromium supported cell adhesion; however DLC and DLC doped with a lower concentration of chromium supported osteogenic cell differentiation.

  4. Degradation of the insecticide propoxur by electrochemical advanced oxidation processes using a boron-doped diamond/air-diffusion cell.

    PubMed

    Guelfi, Diego Roberto Vieira; Gozzi, Fábio; Sirés, Ignasi; Brillas, Enric; Machulek, Amílcar; de Oliveira, Silvio César

    2016-03-17

    A solution with 0.38 mM of the pesticide propoxur (PX) at pH 3.0 has been comparatively treated by electrochemical oxidation with electrogenerated H2O2 (EO-H2O2), electro-Fenton (EF), and photoelectro-Fenton (PEF). The trials were carried out with a 100-mL boron-doped diamond (BDD)/air-diffusion cell. The EO-H2O2 process had the lowest oxidation ability due to the slow reaction of intermediates with (•)OH produced from water discharge at the BDD anode. The EF treatment yielded quicker mineralization due to the additional (•)OH formed between added Fe(2+) and electrogenerated H2O2. The PEF process was the most powerful since it led to total mineralization by the combined oxidative action of hydroxyl radicals and UVA irradiation. The PX decay agreed with a pseudo-first-order kinetics in EO-H2O2, whereas in EF and PEF, it obeyed a much faster pseudo-first-order kinetics followed by a much slower one, which are related to the oxidation of its Fe(II) and Fe(III) complexes, respectively. EO-H2O2 showed similar oxidation ability within the pH range 3.0-9.0. The effect of current density and Fe(2+) and substrate contents on the performance of the EF process was examined. Two primary aromatic products were identified by LC-MS during PX degradation.

  5. Mineralization of the recalcitrant oxalic and oxamic acids by electrochemical advanced oxidation processes using a boron-doped diamond anode.

    PubMed

    Garcia-Segura, Sergi; Brillas, Enric

    2011-04-01

    Oxalic and oxamic acids are the ultimate and more persistent by-products of the degradation of N-aromatics by electrochemical advanced oxidation processes (EAOPs). In this paper, the kinetics and oxidative paths of these acids have been studied for several EAOPs using a boron-doped diamond (BDD) anode and a stainless steel or an air-diffusion cathode. Anodic oxidation (AO-BDD) in the presence of Fe(2+) (AO-BDD-Fe(2+)) and under UVA irradiation (AO-BDD-Fe(2+)-UVA), along with electro-Fenton (EF-BDD), was tested. The oxidation of both acids and their iron complexes on BDD was clarified by cyclic voltammetry. AO-BDD allowed the overall mineralization of oxalic acid, but oxamic acid was removed much more slowly. Each acid underwent a similar decay in AO-BDD-Fe(2+) and EF-BDD, as expected if its iron complexes were not attacked by hydroxyl radicals in the bulk. The faster and total mineralization of both acids was achieved in AO-BDD-Fe(2+)-UVA due to the high photoactivity of their Fe(III) complexes that were continuously regenerated by oxidation of their Fe(II) complexes. Oxamic acid always released a larger proportion of NH(4)(+) than NO(3)(-) ion, as well as volatile NO(x) species. Both acids were independently oxidized at the anode in AO-BDD, but in AO-BDD-Fe(2+)-UVA oxamic acid was more slowly degraded as its content decreased, without significant effect on oxalic acid decay. The increase in current density enhanced the oxidation power of the latter method, with loss of efficiency. High Fe(2+) contents inhibited the oxidation of Fe(II) complexes by the competitive oxidation of Fe(2+) to Fe(3+). Low current densities and Fe(2+) contents are preferable to remove more efficiently these acids by the most potent AO-BDD-Fe(2+)-UVA method.

  6. Boron-doped diamond electrooxidation of ethyl paraben: The effect of electrolyte on by-products distribution and mechanisms.

    PubMed

    Frontistis, Zacharias; Antonopoulou, Maria; Yazirdagi, Melis; Kilinc, Zeynep; Konstantinou, Ioannis; Katsaounis, Alexandros; Mantzavinos, Dionissios

    2016-07-01

    Ethyl paraben (EP), a representative emerging pollutant of the parabens family, was subject to electrochemical oxidation over a boron-doped diamond (BDD) anode. Experiments were carried out in a single-compartment cell at 10-70 mA cm(-2) current density, 200-600 μg L(-1) EP concentration, initial solution pH 3-9 and 0.1 M electrolyte concentration. The degradation rate is favored at increased current densities and in the presence of NaCl as the supporting electrolyte, while the pH effect is inconsiderable. For instance, the first order rate constant for the degradation of 200 μg L(-1) EP at 30 mA cm(-2) was 0.25, 0.1 and 0.07 min(-1) with NaCl, Na2SO4 and HClO4, respectively. Degradation in secondary treated wastewater was faster than in pure water presumably due to the action of chloride ions present in the effluent. Liquid chromatography time-of-flight mass spectrometry (LC-TOF-MS) was employed to determine major transformation by-products (TBPs). The route of EP degradation with Na2SO4 involves hydroxylation and demethylation reactions, signifying the role of electrogenerated hydroxyl radicals in the process. Twenty one TBPs were identified with NaCl as the electrolyte, including several chlorinated and non-chlorinated dimers and trimers; these findings suggest that indirect oxidation mediated by chlorine radicals and other chlorine active species also takes place. In this view, the role of the supporting electrolyte is crucial since it can influence both reaction kinetics and pathways.

  7. Determination of 1-hydroxypyrene in human urine by HPLC with electrochemical detection at a boron-doped diamond film electrode.

    PubMed

    Yosypchuk, Oksana; Barek, Jiří; Vyskočil, Vlastimil

    2012-08-01

    A high-performance liquid chromatographic method with electrochemical detection (HPLC-ED) at a boron-doped diamond film electrode with preliminary separation and preconcentration by solid-phase extraction (SPE) has been developed for the determination of 1-hydroxypyrene (1-HP) in human urine. 1-HP is among the most widely used biomarkers of exposure to polycyclic aromatic hydrocarbons. Optimal HPLC-ED conditions have been found: mobile phase methanol-0.05 mol L(-1) phosphate buffer pH 5.0 (80:20, v/v), detection potential +1,000 mV versus Ag/AgCl (3 mol L(-1) KCl), and flow rate 0.8 mL min(-1). For SPE, LiChrolut(®) RP-18 E cartridges were used. The extraction yield was (87.0 ± 5.8)% (n = 5). The concentration dependence of 1-HP was measured in the concentration range from 0.01 to 10 μmol L(-1) (2.18-2,180 μg L(-1)) using methanolic solutions resulting from the SPE pretreatment of spiked human urine samples. The limit of detection (signal-to-noise ratio 3) and the limit of quantification (signal-to-noise ratio 10) of the biomarker were 0.013 μmol L(-1) (2.84 μg L(-1)) and 0.043 μmol L(-1) (9.39 μg L(-1)), respectively, which is sufficient for its determination in the urine of persons exposed to polycyclic aromatic hydrocarbons.

  8. Determination of parabens in shampoo using high performance liquid chromatography with amperometric detection on a boron-doped diamond electrode.

    PubMed

    Martins, Isarita; Carreira, Franciely Cristiani; Canaes, Larissa S; de Souza Campos Junior, Francisco Alberto; da Silva Cruz, Letícia Maria; Rath, Susanne

    2011-07-15

    Methylparaben (MePa), ethylparaben (EtPa) and propylparaben (PrPa) have been widely used, among others, as chemical preservatives in cosmetics, drugs and foods. As these compounds are linked with allergies, dermatitis and estrogenic properties, it is necessary to control the concentration of these substances in different matrices. The aim of this paper are: to evaluate the electrochemical behavior of parabens on the boron-doped diamond (BDD) electrode and the development of a chromatographic method, with electrochemical detection (HPLC-ED), for determination of parabens in shampoo. A BDD (8000 ppm) electrode was adapted in a thin layer mode analytical cell consisting of a stainless steel and a platinum wire as reference and auxiliary electrodes, respectively. Chromatographic separations were obtained with a reversed phase C8 analytical column and a mobile phase of 0.025 molL(-1) disodium phosphate, pH 7.0, and acetonitrile (40:60, v/v), delivered at a flow rate of 1.0 mL min(-1). Sample preparation was performed by solid phase extraction using C18 cartridges and acetonitrile for elution. Benzylparaben was employed as internal standard. The HPLC-ED method developed, using the BDD electrode, was validated for the determination of parabens in shampoos and presented adequate linearity (>0.999), in the range of 0.0125-0.500% (w/w), detectability 0.01% (w/w), precision (RSD of 2.3-9.8%) and accuracy (93.1-104.4%) and could be applied for routine quality control of shampoos containing MePa, EtPa and PrPa.

  9. Validation of high-performance liquid chromatography-boron-doped diamond detection for assessing hepatic glutathione redox status.

    PubMed

    Park, Hea Jin; Mah, Eunice; Bruno, Richard S

    2010-12-15

    Glutathione redox status is a commonly used oxidative stress biomarker. High-performance liquid chromatography-ultraviolet (HPLC-UV) and HPLC-electrochemical detection (HPLC-ECD) have been used to assess glutathione status but have potential limitations due to challenging sample preparation procedures or electrochemical signal degradation. Thus, this study aimed to validate an HPLC-ECD approach using boron-doped diamond (BDD), a novel electrode material exhibiting excellent electrochemical stability. Liver homogenates from obese (ob/ob) mice and their lean littermates (n=4/genotype) as well as from rats fed high- or low-fat diets (n=8/treatment) were analyzed in parallel by HPLC-BDD and -UV. HPLC-BDD responses for reduced glutathione (GSH) and oxidized glutathione (GSSG) were linear over more than four orders of magnitude at 1475 mV, the optimal oxidation potential. Within- and between-day precision values of GSH, GSSG, and GSH/GSSG were 2.1% to 7.9%, and accuracy values of GSH and GSSG were 96% and 105%, respectively. Electrochemical responses were stable up to 48 h of continuous system use. Using HPLC-BDD and -UV, hepatic GSH, GSSG, and GSH/GSSG from mice (r=0.64-0.94) and rats (r=0.79-0.92) were well correlated (P<0.05), and no significant differences in thiol levels were observed between detection methods. Collectively, our findings support HPLC-BDD as a relatively simple, accurate, and validated approach for evaluating hepatic glutathione redox status.

  10. Atomic structure of Beta-tantalum nanocrystallites.

    PubMed

    Tillmann, Karsten; Thust, Andreas; Gerber, Andreas; Weides, Martin P; Urban, Knut

    2005-12-01

    The structural properties of beta-phase tantalum nanocrystallites prepared by room temperature magnetron sputter deposition on amorphous carbon substrates are investigated at atomic resolution. For these purposes spherical aberration-corrected high-resolution transmission electron microscopy is applied in tandem with the numerical retrieval of the exit-plane wavefunction as obtained from a through-focus series of experimental micrographs. We demonstrate that recent improvements in the resolving power of electron microscopes enable the imaging of the atomic structure of beta-tantalum with column spacings of solely 0.127 nm with directly interpretable contrast features. For the first time ever, we substantiate the existence of grain boundaries of 30 degrees tilt type in beta-Ta whose formation may be well explained by atomic agglomeration processes taking place during sputter deposition.

  11. Ethanol sensor based on nanocrystallite cadmium ferrite

    SciTech Connect

    Gadkari, Ashok B.; Shinde, Tukaram J.; Vasambekar, Pramod N.

    2015-06-24

    The cadmium ferrite was synthesized by oxalate co-precipitation method. The crystal structure and surface morphology were examined by X-ray diffraction and SEM techniques, respectively. The nanocrystallite CdFe{sub 2}O{sub 4} sensor was tested for LPG, Cl{sub 2} and C{sub 2}H{sub 5}OH. The sensitivity was measured at various operating temperatures in the range of 100-400°C. The sensor shows highest sensitivity and selectivity to C{sub 2}H{sub 5}OH at 350°C. The response and recovery time was measured at operating temperature of 350°C. The sensor exhibits a lower response and recovery time for LPG and Cl{sub 2} as compared to ethanol.

  12. Ethanol sensor based on nanocrystallite cadmium ferrite

    NASA Astrophysics Data System (ADS)

    Gadkari, Ashok B.; Shinde, Tukaram J.; Vasambekar, Pramod N.

    2015-06-01

    The cadmium ferrite was synthesized by oxalate co-precipitation method. The crystal structure and surface morphology were examined by X-ray diffraction and SEM techniques, respectively. The nanocrystallite CdFe2O4 sensor was tested for LPG, Cl2 and C2H5OH. The sensitivity was measured at various operating temperatures in the range of 100-400°C. The sensor shows highest sensitivity and selectivity to C2H5OH at 350°C. The response and recovery time was measured at operating temperature of 350°C. The sensor exhibits a lower response and recovery time for LPG and Cl2 as compared to ethanol.

  13. Design of hybrid titania nanocrystallites as supports for gold catalysts.

    PubMed

    Mendez, Violaine; Caps, Valérie; Daniele, Stéphane

    2009-06-07

    Citrate-functionalized titania nanocrystallites are successfully synthesized from a heteroleptic titanium alkoxide precursor in a low temperature, hydrolytic process and used as gold catalyst supports for CO oxidation and aerobic stilbene epoxidation.

  14. Boron-Doped Diamond Microelectrodes Reveal Reduced Serotonin Uptake Rates in Lymphocytes from Adult Rhesus Monkeys Carrying the Short Allele of the 5-HTTLPR

    PubMed Central

    2009-01-01

    Uptake resolved by high-speed chronoamperometry on a second-by-second basis has revealed important differences in brain serotonin transporter function associated with genetic variability. Here, we use chronoamperometry to investigate variations in serotonin transport in primary lymphocytes associated with the rhesus serotonin transporter gene-linked polymorphism (rh5-HTTLPR), a promoter polymorphism whose orthologues occur only in higher order primates including humans. Serotonin clearance by lymphocytes is Na+-dependent and inhibited by the serotonin-selective reuptake inhibitor paroxetine (Paxil), indicative of active uptake by serotonin transporters. Moreover, reductions in serotonin uptake rates are evident in lymphocytes from monkeys with one or two copies of the short ‘s’ allele of the rh5-HTTLPR (s/s < s/l < l/l). These findings illustrate that rh5-HTTLPR-related alterations in serotonin uptake are present during adulthood in peripheral blood cells natively expressing serotonin transporters. Moreover, they suggest that lymphocytes can be used as peripheral biomarkers for investigating genetic or pharmacologic alterations in serotonin transporter function. Use of boron-doped diamond microelectrodes for measuring serotonin uptake, in contrast to carbon fiber microelectrodes used previously in the brain, enabled these high-sensitivity and high-resolution measurements. Boron-doped diamond microelectrodes show excellent signal-to-noise and signal-to-background ratios due mainly to low background currents and are highly resistant to fouling when exposed to lymphocytes or high concentrations of serotonin. PMID:20352073

  15. Industrial diamond

    USGS Publications Warehouse

    Olson, D.W.

    2001-01-01

    An overview of the industrial diamond industry is provided. More than 90 percent of the industrial diamond consumed in the U.S. and the rest of the world is manufactured diamond. Ireland, Japan, Russia, and the U.S. produce 75 percent of the global industrial diamond output. In 2000, the U.S. was the largest market for industrial diamond. Industrial diamond applications, prices for industrial diamonds, imports and exports of industrial diamonds, the National Defense Stockpile of industrial diamonds, and the outlook for the industrial diamond market are discussed.

  16. Entropy-driven structure and dynamics in carbon nanocrystallites

    NASA Astrophysics Data System (ADS)

    McNutt, N. W.; Wang, Q.; Rios, O.; Keffer, D. J.

    2014-04-01

    New carbon composite materials are being developed that contain carbon nanocrystallites in the range of 5-17 Å in radius dispersed within an amorphous carbon matrix. Evaluating the applicability of these materials for use in battery electrodes requires a molecular-level understanding of the thermodynamic, structural, and dynamic properties of the nanocrystallites. Herein, molecular dynamics simulations reveal the molecular-level mechanisms for such experimental observations as the increased spacing between carbon planes in nanocrystallites as a function of decreasing crystallite size. As the width of this spacing impacts Li-ion capacity, an explanation of the origin of this distance is relevant to understanding anode performance. It is thus shown that the structural configuration of these crystallites is a function of entropy. The magnitude of out-of-plane ripples, binding energy between layers, and frequency of characteristic planar modes are reported over a range of nanocrystallite sizes and temperatures. This fundamental information for layered carbon nanocrystallites may be used to explain enhanced lithium ion diffusion within the carbon composites.

  17. Diamond Electronic Devices

    NASA Astrophysics Data System (ADS)

    Isberg, J.

    2010-11-01

    For high-power and high-voltage applications, silicon is by far the dominant semiconductor material. However, silicon has many limitations, e.g. a relatively low thermal conductivity, electric breakdown occurs at relatively low fields and the bandgap is 1.1 eV which effectively limits operation to temperatures below 175° C. Wide-bandgap materials, such as silicon carbide (SiC), gallium nitride (GaN) and diamond offer the potential to overcome both the temperature and power handling limitations of silicon. Diamond is the most extreme in this class of materials. By the fundamental material properties alone, diamond offers the largest benefits as a semiconductor material for power electronic applications. On the other hand, diamond has a problem with a large carrier activation energy of available dopants which necessitates specialised device concepts to allow room temperature (RT) operation. In addition, the role of common defects on the charge transport properties of diamond is poorly understood. Notwithstanding this, many proof-of-principle two-terminal and three-terminal devices have been made and tested. Two-terminal electronic diamond devices described in the literature include: p-n diodes, p-i-n diodes, various types of radiation detectors, Schottky diodes and photoconductive or electron beam triggered switches. Three terminal devices include e.g. MISFETs and JFETs. However, the development of diamond devices poses great challenges for the future. A particularly interesting way to overcome the doping problem, for which there has been some recent progress, is to make so-called delta doped (or pulse-doped) devices. Such devices utilise very thin (˜1 nm) doped layers in order to achieve high RT activation.

  18. Co-reactant-on-Demand ECL: Electrogenerated Chemiluminescence by the in Situ Production of S2O8(2-) at Boron-Doped Diamond Electrodes.

    PubMed

    Irkham; Watanabe, Takeshi; Fiorani, Andrea; Valenti, Giovanni; Paolucci, Francesco; Einaga, Yasuaki

    2016-12-07

    A novel co-reactant-free electrogenerated chemiluminescence (ECL) system is developed where Ru(bpy)3(2+) emission is obtained on boron-doped diamond (BDD) electrodes. The method exploits the unique ability of BDD to operate at very high oxidation potential in aqueous solutions and to promote the conversion of inert SO4(2-) into the reactive co-reactant S2O8(2-). This novel procedure is rather straightforward, not requiring any particular electrode geometry, and since the co-reactant is only generated in situ, the interference with biological samples is minimized. The underlying mechanism is similar to that of the Ru(bpy)3(2+)/S2O8(2-) system; however, the intensity of the emitted signal increases linearly with [SO4(2-)] up to ∼0.6 M, with possible implications for analytical uses of the proposed procedure.

  19. Assessment of Boron Doped Diamond Electrode Quality and Application to In Situ Modification of Local pH by Water Electrolysis.

    PubMed

    Read, Tania L; Macpherson, Julie V

    2016-01-06

    Boron doped diamond (BDD) electrodes have shown considerable promise as an electrode material where many of their reported properties such as extended solvent window, low background currents, corrosion resistance, etc., arise from the catalytically inert nature of the surface. However, if during the growth process, non-diamond-carbon (NDC) becomes incorporated into the electrode matrix, the electrochemical properties will change as the surface becomes more catalytically active. As such it is important that the electrochemist is aware of the quality and resulting key electrochemical properties of the BDD electrode prior to use. This paper describes a series of characterization steps, including Raman microscopy, capacitance, solvent window and redox electrochemistry, to ascertain whether the BDD electrode contains negligible NDC i.e. negligible sp(2) carbon. One application is highlighted which takes advantage of the catalytically inert and corrosion resistant nature of an NDC-free surface i.e. stable and quantifiable local proton and hydroxide production due to water electrolysis at a BDD electrode. An approach to measuring the local pH change induced by water electrolysis using iridium oxide coated BDD electrodes is also described in detail.

  20. Hydrogenation effects on carrier transport in boron-doped ultrananocrystalline diamond/amorphous carbon films prepared by coaxial arc plasma deposition

    SciTech Connect

    Katamune, Yūki Takeichi, Satoshi; Ohmagari, Shinya; Yoshitake, Tsuyoshi

    2015-11-15

    Boron-doped ultrananocrystalline diamond/hydrogenated amorphous carbon composite (UNCD/a-C:H) films were deposited by coaxial arc plasma deposition with a boron-blended graphite target at a base pressure of <10{sup −3} Pa and at hydrogen pressures of ≤53.3 Pa. The hydrogenation effects on the electrical properties of the films were investigated in terms of chemical bonding. Hydrogen-scattering spectrometry showed that the maximum hydrogen content was 35 at. % for the film produced at 53.3-Pa hydrogen pressure. The Fourier-transform infrared spectra showed strong absorptions by sp{sup 3} C–H bonds, which were specific to the UNCD/a-C:H, and can be attributed to hydrogen atoms terminating the dangling bonds at ultrananocrystalline diamond grain boundaries. Temperature-dependence of the electrical conductivity showed that the films changed from semimetallic to semiconducting with increasing hydrogen pressure, i.e., with enhanced hydrogenation, probably due to hydrogenation suppressing the formation of graphitic bonds, which are a source of carriers. Carrier transport in semiconducting hydrogenated films can be explained by a variable-range hopping model. The rectifying action of heterojunctions comprising the hydrogenated films and n-type Si substrates implies carrier transport in tunneling.

  1. nanocrystallites condensed in vapor-phase for photocatalyst applications

    NASA Astrophysics Data System (ADS)

    Yoshida, Takehito; Yagi, Nobuyasu; Nakagou, Riki; Sugimura, Akira; Umezu, Ikurou

    2014-10-01

    We have synthesized titanium dioxide (TiO2) nanocrystallites by pulsed laser ablation (PLA) in oxygen (O2) background gas for photocatalyst applications. Varying O2 background gas pressure or substrate target distance ( D TS), it was possible to change weight fraction of anatase phase in the anatase/rutile mixture from 0.2 to 1.0. Porosity of the deposited TiO2 films increased with increasing and D TS. Relation between the process parameters and the formed crystal phases was explained from the point of cooling process in vapor-phase. Furthermore, rapid thermal annealing (RTA) was performed as post-annealing, suppressing sintering of the nanocrystallites. Photocatalytic activities of the TiO2 nanocrystallites depended on the RTA temperature and following crystallinity restoring as well as the crystal phase: anatase or rutile.

  2. Mercury-free sono-electroanalytical detection of lead in human blood by use of bismuth-film-modified boron-doped diamond electrodes.

    PubMed

    Kruusma, Jaanus; Banks, Craig E; Compton, Richard G

    2004-06-01

    We report the electroanalytical determination of lead by anodic stripping voltammetry at in-situ-formed, bismuth-film-modified, boron-doped diamond electrodes. Detection limits in 0.1 mol L(-1) nitric acid solution of 9.6 x 10(-8) mol L(-1) (0.2 ppb) and 1.1 x 10(-8) mol L(-1) (2.3 ppb) were obtained after 60 and 300 s deposition times, respectively. An acoustically assisted deposition procedure was also investigated and found to result in improved limits of detection of 2.6 x 10(-8) mol L(-1) (5.4 ppb) and 8.5 x 10(-10) mol L(-1) (0.18 ppb) for 60 and 300 s accumulation times, respectively. Furthermore, the sensitivity obtained under quiescent and insonated conditions increased from 5.5 (quiescent) to 76.7 A mol(-1) L (insonated) for 60 s accumulation and from 25.8 (quiescent) to 317.6 A mol(-1) L (insonated) for 300 s accumulation. Investigation of the use of ultrasound with diluted blood revealed detection limits of the order of 10(-8) mol L(-1) were achievable with excellent inter- and intra-reproducibility and sensitivity of 411.9 A mol(-1) L. For the first time, electroanalytical detection of lead in diluted blood is shown to be possible by use of insonated in-situ-formed bismuth-film-modified boron-doped diamond electrodes. This method is a rapid, sensitive, and non-toxic means of clinical sensing of lead in whole human blood.

  3. Electrochemical inactivation of cyanobacteria and microcystin degradation using a boron-doped diamond anode - A potential tool for cyanobacterial bloom control.

    PubMed

    Meglič, Andrej; Pecman, Anja; Rozina, Tinkara; Leštan, Domen; Sedmak, Bojan

    2017-03-01

    Cyanobacterial blooms are global phenomena that can occur in calm and nutrient-rich (eutrophic) fresh and marine waters. Human exposure to cyanobacteria and their biologically active products is possible during water sports and various water activities, or by ingestion of contaminated water. Although the vast majority of harmful cyanobacterial products are confined to the interior of the cells, these are eventually released into the surrounding water following natural or artificially induced cell death. Electrochemical oxidation has been used here to damage cyanobacteria to halt their proliferation, and for microcystin degradation under in-vitro conditions. Partially spent Jaworski growth medium with no addition of supporting electrolytes was used. Electrochemical treatment resulted in the cyanobacterial loss of cell-buoyancy regulation, cell proliferation arrest, and eventual cell death. Microcystin degradation was studied separately in two basic modes of treatment: batch-wise flow, and constant flow, for electrolytic-cell exposure. Batch-wise exposure simulates treatment under environmental conditions, while constant flow is more appropriate for the study of boron-doped diamond electrode efficacy under laboratory conditions. The effectiveness of microcystin degradation was established using high-performance liquid chromatography-photodiode array detector analysis, while the biological activities of the products were estimated using a colorimetric protein phosphatase-1 inhibition assay. The results indicate potential for the application of electro-oxidation methods for the control of bloom events by taking advantage of specific intrinsic ecological characteristics of bloom-forming cyanobacteria. The applicability of the use of boron-doped diamond electrodes in remediation of water exposed to cyanobacteria bloom events is discussed.

  4. Industrial diamond

    USGS Publications Warehouse

    Olson, D.W.

    2003-01-01

    Statistics on the production, consumption, cost, trade, and government stockpile of natural and synthetic industrial diamond are provided. The outlook for the industrial diamond market is also considered.

  5. Effects of nitrogen doping on the electrical conductivity and optical absorption of ultrananocrystalline diamond/hydrogenated amorphous carbon films prepared by coaxial arc plasma deposition

    NASA Astrophysics Data System (ADS)

    Zkria, Abdelrahman; Katamune, Yūki; Yoshitake, Tsuyoshi

    2016-07-01

    3 at. % nitrogen-doped ultrananocrystalline diamond/hydrogenated amorphous carbon composite (UNCD/a-C:H) films were synthesized by coaxial arc plasma deposition. Optically, the films possess large absorption coefficients of more than 105 cm-1 at photon energies from 3 to 5 eV. The optical band gap was estimated to be 1.28 eV. This value is smaller than that of undoped films, which might be attributable to increased sp2 fractions. The temperature dependence of the electrical conductivity implies that carrier transport follows a hopping conduction model. Heterojunctions with p-type Si substrates exhibited a typical rectifying action. From the capacitance-voltage characteristics that evidently indicated the expansion of a depletion region into the film side, the built-in potential and carrier concentration were estimated to be 0.51 eV and 7.5 × 1016 cm-3, respectively. It was experimentally demonstrated that nitrogen-doped UNCD/a-C:H films are applicable as an n-type semiconductor.

  6. Structural and electrical properties and current-voltage characteristics of nitrogen-doped diamond-like carbon films on Si substrates by plasma-enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Tsuchiya, Masato; Murakami, Kazuki; Magara, Kohei; Nakamura, Kazuki; Ohashi, Haruka; Tokuda, Kengo; Takami, Takahiro; Ogasawara, Haruka; Enta, Yoshiharu; Suzuki, Yushi; Ando, Satoshi; Nakazawa, Hideki

    2016-06-01

    We have deposited nitrogen-doped diamond-like carbon (N-DLC) films by plasma-enhanced chemical vapor deposition using CH4, N2, and Ar, and investigated the effects of N doping on the structure and the electrical, mechanical, and optical properties of the N-DLC films. We fabricated undoped DLC/p-type Si and N-DLC/p-type Si heterojunctions and examined the current-voltage characteristics of the heterojunctions. When the N2 flow ratio was increased from 0 to 3.64%, the resistivity markedly decreased from the order of 105 Ω·cm to that of 10-2 Ω·cm and the internal stress also decreased. The resistivity gradually increased with increasing N2 flow ratio from 3.64 to 13.6%, and then it decreased at a N2 flow ratio of 13.6%. These behaviors can be explained in terms of the clustering of sp2 carbons and the formation of sp3C-N, sp2C=N, sp1C≡N, and C-H n bonds. The rectification ratio of the heterojunction using the N-DLC film prepared at 3.64% was 35.8 at ±0.5 V.

  7. Delimiting the boron influence on the adsorptive properties of water and rad OH radicals on H-terminated Boron Doped Diamond catalysts: A Density Functional Theory analysis

    NASA Astrophysics Data System (ADS)

    Jaimes, Raciel; Vazquez-Arenas, Jorge; González, Ignacio; Galván, Marcelo

    2016-11-01

    Motivated for the success of Boron Doped Diamond (BDD) in electrocatalysis, where water and hydroxyl radical interactions play an overriding role on surface reactivity, this study presents a Density Functional Theory (DFT) analysis intended to correlate its structure and reactivity. H-terminated periodic surfaces (supercells 5 × 5) with atomic composition of one boron per 150 C atoms are used for these purposes, and where B position was varied in different layers. Analyses of total density of states (TDOS), localization of occupied and unoccupied states near the Fermi level and adsorption energies show that the effect of B doping on surface reactivity decreases as a function of its vertical distance from the BDD surface, and it is restricted to the first three surface layers. The adsorption free energy calculated for a water molecule corroborates the hydrophobic nature of these surfaces, becoming more repulsive as B is located within the first three surface layers. In contrast, the free energy computed for hydroxyl radical is always exergonic. Hydrogen abstraction by hydroxyl radical is an energy-enabled process for all surface hydrogens, regardless if they are bonded to C or B atoms, becoming more energetic when hydrogen is directly bonded to B or its nearest neighbor carbon, while other abstractions present very similar adsorption energies than in the absence of boron.

  8. Thermoluminescent properties of Ni and Co doped synthetic, high pressure, high temperature diamonds: application to ionising radiation dosimetry.

    PubMed

    Benabdesselam, M; Iacconi, P; Gheeraert, E; Kanda, H; Lapraz, D; Briand, D

    2002-01-01

    An investigation of the thermoluminescence (TL) properties of high pressure, high temperature (HPHT) synthetic diamond crystals grown under diluted nickel or cobalt as solvent catalysts is reported. After a study of TL properties of 6 different samples, it is shown that a crystal grown with Ni+2%Ti and annealed at 2100 K presents an intense glow peak at around 490 K. This peak is characterised by a broad emission band centred at 530 nm (2.34 eV). This crystal presents a significant, reproducible and linear TL response relative to the absorbed dose up to an X ray air kerma of 10 Gy. All these features make this material suitable for ionising radiation dosimetry. A similar study is made on another crystal grown from pure Co, and a comparative review of the results does show that for dosimetry work, Ni-containing diamonds are more appropriate than those grown from Co catalyst.

  9. Surface Roughness and Critical Exponent Analyses of Boron-Doped Diamond Films Using Atomic Force Microscopy Imaging: Application of Autocorrelation and Power Spectral Density Functions

    NASA Astrophysics Data System (ADS)

    Gupta, S.; Vierkant, G. P.

    2014-09-01

    The evolution of the surface roughness of growing metal or semiconductor thin films provides much needed information about their growth kinetics and corresponding mechanism. While some systems show stages of nucleation, coalescence, and growth, others exhibit varying microstructures for different process conditions. In view of these classifications, we report herein detailed analyses based on atomic force microscopy (AFM) characterization to extract the surface roughness and growth kinetics exponents of relatively low boron-doped diamond (BDD) films by utilizing the analytical power spectral density (PSD) and autocorrelation function (ACF) as mathematical tools. The machining industry has applied PSD for a number of years for tool design and analysis of wear and machined surface quality. Herein, we present similar analyses at the mesoscale to study the surface morphology as well as quality of BDD films grown using the microwave plasma-assisted chemical vapor deposition technique. PSD spectra as a function of boron concentration (in gaseous phase) are compared with those for samples grown without boron. We find that relatively higher boron concentration yields higher amplitudes of the longer-wavelength power spectral lines, with amplitudes decreasing in an exponential or power-law fashion towards shorter wavelengths, determining the roughness exponent ( α ≈ 0.16 ± 0.03) and growth exponent ( β ≈ 0.54), albeit indirectly. A unique application of the ACF, which is widely used in signal processing, was also applied to one-dimensional or line analyses (i.e., along the x- and y-axes) of AFM images, revealing surface topology datasets with varying boron concentration. Here, the ACF was used to cancel random surface "noise" and identify any spatial periodicity via repetitive ACF peaks or spatially correlated noise. Periodicity at shorter spatial wavelengths was observed for no doping and low doping levels, while smaller correlations were observed for relatively

  10. Hemocompatibility of nitrogen-doped, hydrogen-free diamond-like carbon prepared by nitrogen plasma immersion ion implantation-deposition.

    PubMed

    Kwok, Sunny C H; Yang, Ping; Wang, Jin; Liu, Xuanyong; Chu, Paul K

    2004-07-01

    Amorphous hydrogenated carbon (a-C:H) has been shown to be a potential material in biomedical devices such as artificial heart valves, bone implants, and so on because of its chemical inertness, low coefficient of friction, high wear resistance, and good biocompatibility. However, the biomedical characteristics such as blood compatibility of doped hydrogen-free diamond-like carbon (DLC) have not been investigated in details. We recently began to investigate the potential use of nitrogen-doped, hydrogen-free DLC in artificial heart valves. In our experiments, a series of hydrogen-free DLC films doped with nitrogen were synthesized by plasma immersion ion implantation-deposition (PIII-D) utilizing a pulsed vacuum arc plasma source and different N to Ar (FN/FAr) gas mixtures in the plasma chamber. The structures and properties of the film were evaluated by Raman spectroscopy, Rutherford backscattering spectrometry (RBS), and X-ray photoelectron spectroscopy (XPS). To assess the blood compatibility of the films and the impact on the blood compatibility by the presence of nitrogen, platelet adhesion tests were conducted. Our results indicate that the blood compatibility of both hydrogen-free carbon films (a-C) and amorphous carbon nitride films are better than that of low-temperature isotropic pyrolytic carbon (LTIC). The experimental results are consistent with the relative theory of interfacial energy and surface tension including both dispersion and polar components. Our results also indicate that an optimal fraction of sp2 bonding is desirable, but an excessively high nitrogen concentration degrades the properties to an extent that the biocompatibility can be worse than that of LTIC.

  11. Amorphous-diamond electron emitter

    DOEpatents

    Falabella, Steven

    2001-01-01

    An electron emitter comprising a textured silicon wafer overcoated with a thin (200 .ANG.) layer of nitrogen-doped, amorphous-diamond (a:D-N), which lowers the field below 20 volts/micrometer have been demonstrated using this emitter compared to uncoated or diamond coated emitters wherein the emission is at fields of nearly 60 volts/micrometer. The silicon/nitrogen-doped, amorphous-diamond (Si/a:D-N) emitter may be produced by overcoating a textured silicon wafer with amorphous-diamond (a:D) in a nitrogen atmosphere using a filtered cathodic-arc system. The enhanced performance of the Si/a:D-N emitter lowers the voltages required to the point where field-emission displays are practical. Thus, this emitter can be used, for example, in flat-panel emission displays (FEDs), and cold-cathode vacuum electronics.

  12. Dynamic optical properties of amorphous diamond-like carbon nanocomposite films doped with Cu and Ag nanoparticles

    NASA Astrophysics Data System (ADS)

    Tamulevičius, Tomas; Peckus, Domantas; Tamulevičiene, Asta; Vasiliauskas, Andrius; Čiegis, Arvydas; Meškinis, Šarūnas; Tamulevičius, Sigitas

    2014-09-01

    The investigation of relaxation processes in noble metal nanoparticles upon ultrafast excitations by femtosecond laser pulses is useful to understand the origin and the enhancement mechanism of the nonlinear optical properties for metaldielectric nanocomposites. In the current work we analyze diamond like carbon (DLC) film based copper and silver nanocomposites with different metal content synthesized employing unbalanced magnetron sputtering of metal targets with argon ions in acetylene gas atmosphere. Surface morphology and nanoparticle sizes were analyzed employing scanning electron and atomic force microscopy. Optical properties of the nanocomposite films were analyzed employing UV-VIS-NIR spectrometry. Transient absorption measurements were obtained employing Yb:KGW femtosecond laser spectroscopic system (HARPIA, Light Conversion Ltd.). Energy relaxation dynamics in Cu nanoparticles showed some significant differences from Ag nanoparticles. The increase of excitation intensity hasn't show additional nonlinear effects for the excited state relaxation dynamics for both kinds of samples.

  13. Electro-fenton and photoelectro-fenton degradation of sulfanilic acid using a boron-doped diamond anode and an air diffusion cathode.

    PubMed

    El-Ghenymy, Abdellatif; Garrido, José Antonio; Centellas, Francesc; Arias, Conchita; Cabot, Pere Lluís; Rodríguez, Rosa María; Brillas, Enric

    2012-04-05

    The mineralization of sulfanilic acid has been studied by electro-Fenton (EF) and photoelectro-Fenton (PEF) reaction with UVA light using an undivided electrochemical cell with a boron-doped diamond (BDD) anode and an air diffusion cathode able to generate H(2)O(2). Organics were then oxidized by hydroxyl radicals formed at the anode surface from water oxidation and in the bulk from Fenton's reaction between generated H(2)O(2) and added Fe(2+). The UVA irradiation in PEF enhanced the production of hydroxyl radicals in the bulk, accelerating the removal of organics and photodecomposed intermediates like Fe(III)-carboxylate complexes. Partial decontamination of 1.39 mM sulfanilic acid solutions was achieved by EF until 100 mA cm(-2) at optimum conditions of 0.4 mM Fe(2+) and pH 3.0. The increase in current density and substrate content led to an almost total mineralization. In contrast, the PEF process was more powerful, yielding almost complete mineralization in less electrolysis time under comparable conditions. The kinetics for sulfanilic acid decay always followed a pseudo-first-order reaction. Hydroquinone and p-benzoquinone were detected as aromatic intermediates, whereas acetic, maleic, formic, oxalic, and oxamic acids were identified as generated carboxylic acids. NH(4)(+) ion was preferentially released in both treatments, along with NO(3)(-) ion in smaller proportion.

  14. Direct electrochemistry of Shewanella loihica PV-4 on gold nanoparticles-modified boron-doped diamond electrodes fabricated by layer-by-layer technique.

    PubMed

    Wu, Wenguo; Xie, Ronggang; Bai, Linling; Tang, Zuming; Gu, Zhongze

    2012-05-01

    Microbial Fuel Cells (MFCs) are robust devices capable of taping biological energy, converting pollutants into electricity through renewable biomass. The fabrication of nanostructured electrodes with good bio- and electrochemical activity, play a profound role in promoting power generation of MFCs. Au nanoparticles (AuNPs)-modified Boron-Doped Diamond (BDD) electrodes are fabricated by layer-by-layer (LBL) self-assembly technique and used for the direct electrochemistry of Shewanella loihica PV-4 in an electrochemical cell. Experimental results show that the peak current densities generated on the Au/PAH multilayer-modified BDD electrodes increased from 1.25 to 2.93 microA/cm(-2) as the layer increased from 0 to 6. Different cell morphologies of S. loihica PV-4 were also observed on the electrodes and the highest density of cells was attached on the (Au/PAH)6/BDD electrode with well-formed three-dimensional nanostructure. The electrochemistry of S. loihica PV-4 was enhanced on the (Au/PAH)4/BDD electrode due to the appropriate amount of AuNPsand thickness of PAH layer.

  15. High-performance liquid chromatographic method with amperometric detection employing boron-doped diamond electrode for the determination of sildenafil, vardenafil and their main metabolites in plasma.

    PubMed

    Bartošová, Zdenka; Jirovský, David; Horna, Aleš

    2011-11-04

    A simple, fast and sensitive HPLC method with electrochemical detection employing boron-doped diamond electrode (BDD) for the determination of sildenafil (Viagra™), vardenafil (Levitra™) and their main metabolites, N-desmethyl sildenafil and N-desethyl vardenafil in human plasma is presented. The assay involved drug extraction by tert-butyl methyl ether and isocratic reversed-phase liquid chromatography with amperometric detection. Complete separation of all analytes was achieved within 12 min. The mobile phase consisted of 20mM sodium dihydrogen phosphate with 40 mM sodium perchlorate/acetonitrile (70:30, v/v), pH 3.5. The electrode working potential was +1520 mV (vs. Pd/H(2)). Calibration curves were linear over the concentration range of 10-400 ng mL(-1). Phloretin was used as an internal standard. The limits of detection (LOD) and quantification (LOQ) for the studied analytes were within the range of 2-4 ng mL(-1) and 7.0-13.4 ng mL(-1), respectively. The developed method was applied to human plasma samples spiked with analytes at therapeutic concentrations. The study confirms the method's suitability for both pharmacokinetic studies and therapeutic monitoring.

  16. Investigation of the synergistic effects for p-nitrophenol mineralization by a combined process of ozonation and electrolysis using a boron-doped diamond anode.

    PubMed

    Qiu, Cuicui; Yuan, Shi; Li, Xiang; Wang, Huijiao; Bakheet, Belal; Komarneni, Sridhar; Wang, Yujue

    2014-09-15

    Electrolysis and ozonation are two commonly used technologies for treating wastewaters contaminated with nitrophenol pollutants. However, they are often handicapped by their slow kinetics and low yields of total organic carbon (TOC) mineralization. To improve TOC mineralization efficiency, we combined electrolysis using a boron-doped diamond (BDD) anode with ozonation (electrolysis-O3) to treat a p-nitrophenol (PNP) aqueous solution. Up to 91% TOC was removed after 60 min of the electrolysis-O3 process. In comparison, only 20 and 44% TOC was respectively removed by individual electrolysis and ozonation treatment conducted under similar reaction conditions. The result indicates that when electrolysis and ozonation are applied simultaneously, they have a significant synergy for PNP mineralization. This synergy can be mainly attributed to (i) the rapid degradation of PNP to carboxylic acids (e.g., oxalic acid and acetic acid) by O3, which would otherwise take a much longer time by electrolysis alone, and (ii) the effective mineralization of the ozone-refractory carboxylic acids to CO2 by OH generated from multiple sources in the electrolysis-O3 system. The result suggests that combining electrolysis with ozonation can provide a simple and effective way to mutually compensate the limitations of the two processes for degradation of phenolic pollutants.

  17. Development of solar-driven electrochemical and photocatalytic water treatment system using a boron-doped diamond electrode and TiO2 photocatalyst.

    PubMed

    Ochiai, Tsuyoshi; Nakata, Kazuya; Murakami, Taketoshi; Fujishima, Akira; Yao, Yanyan; Tryk, Donald A; Kubota, Yoshinobu

    2010-02-01

    A high-performance, environmentally friendly water treatment system was developed. The system consists mainly of an electrochemical and a photocatalytic oxidation unit, with a boron-doped diamond (BDD) electrode and TiO(2) photocatalyst, respectively. All electric power for the mechanical systems and the electrolysis was able to be provided by photovoltaic cells. Thus, this system is totally driven by solar energy. The treatment ability of the electrolysis and photocatalysis units was investigated by phenol degradation kinetics. An observed rate constant of 5.1 x 10(-3)dm(3)cm(-2)h(-1) was calculated by pseudo-first-order kinetic analysis for the electrolysis, and a Langmuir-Hinshelwood rate constant of 5.6 microM(-1)min(-1) was calculated by kinetic analysis of the photocatalysis. According to previous reports, these values are sufficient for the mineralization of phenol. In a treatment test of river water samples, large amounts of chemical and biological contaminants were totally wet-incinerated by the system. This system could provide 12L/day of drinking water from the Tama River using only solar energy. Therefore, this system may be useful for supplying drinking water during a disaster.

  18. A sandwich structured SiO(2)/cytochrome c/SiO(2) on a boron-doped diamond film electrode as an electrochemical nitrite biosensor.

    PubMed

    Geng, Rong; Zhao, Guohua; Liu, Meichuan; Li, Mingfang

    2008-06-01

    A novel sandwich structured SiO(2) gel/cytochrome c (Cyt c)/SiO(2) gel was designed and constructed on conductive boron-doped diamond (BDD) film substrate. A SiO(2) gel membrane was first in situ deposited on the pretreated positive charged H-terminated BDD electrode with a simple and artful surface vapor sol-gel method. Cyt c was subsequently immobilized onto the SiO(2) membranes by electrostatic attraction, followed by another SiO(2) gel layer in situ depositing on it. The SiO(2) interlayer was conceived to play an important role in the resultant sandwich structured SiO(2)/Cyt c/SiO(2)/BDD electrode as a selective "semi-open" medium, which guaranteed the immobilized Cyt c to maintain high stability and perform good electrochemistry and biocatalysis responses. The bioactivity of Cyt c was well protected and the immobilized biomolecule even didn't denature at extremely high or low pH condition. More attractively, Cyt c in the sandwich structured electrode could be further oxidized into highly reactive Cyt c pi-cation by two-step electrochemical oxidation, which could oxidize NO(2)(-) into NO(3)(-) in the solution. A sensitive determination approach of nitrite was accordingly built up based on this biocatalytic oxidative interaction for the first time and a possible mechanism of the interaction was herein proposed.

  19. Microstructure and surface properties of chromium-doped diamond-like carbon thin films fabricated by high power pulsed magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Wu, Zhongzhen; Tian, Xiubo; Gui, Gang; Gong, Chunzhi; Yang, Shiqin; Chu, Paul K.

    2013-07-01

    High power pulsed magnetron sputtering (HPPMS) has attracted much interest due to the large plasma density and high ionization rate of sputtered materials. It is expected to produce a highly ionized C flux from a graphite target but unfortunately, the ionization rate of carbon is still very small and the discharge on a solid carbon target is unstable as well. In this work, a stable discharged chromium target is used in the preparation of chromium-doped diamond-like carbon (Cr-DLC) films in HPPMS in reactive C2H2 gas, but the unstable graphite. The chromium concentration in the Cr-DLC films is limited by surface poisoning due to reactive gas. Less than 2% of Cr is incorporated into the DLC films at C2H2 flow rate of 5 sccm or higher. However, as a result of the high ionization rate of the reactive gas in HPPMS, intense ion bombardment of the substrate is realized. The films show a smooth surface and a dense structure with a large sp3 concentration. As the C2H2 flow increase, the sp3 fraction increase and the sp3 to sp2 ratio increase to 0.75 at a C2H2 flow rate of 10 sccm. Compared to the substrate, the Cr-DLC films have lower friction and exhibit excellent corrosion resistance.

  20. Electrochemical behavior of chlorogenic acid at a boron-doped diamond electrode and estimation of the antioxidant capacity in the coffee samples based on its oxidation peak.

    PubMed

    Yardım, Yavuz

    2012-04-01

    In this study, an electroanalytical methodology for the determination of chlorogenic acid (CGA) was achieved at a boron-doped diamond electrode under adsorptive transfer stripping voltammetric conditions. The values obtained for CGA were used to estimate the antioxidant properties of the coffee sample based on CGA oxidation. By using square-wave stripping mode, the compound yielded a well-defined voltammetric response at +0.49 V with respect to Ag/AgCl in Britton-Robinson buffer at pH 3.0 (after 120 s accumulations at a fixed potential of 0.40 V). At the optimum experimental conditions, linear calibration curve is obtained within the concentration range of 0.25 to 4.0 μg mL⁻¹ with the limit of detection 0.049 μg mL⁻¹ . The developed protocol was successfully applied for the analysis of antioxidant capacity in the coffee products such as Turkish coffee and instant coffee.

  1. Electrochemical Imprinted Polycrystalline Nickel-Nickel Oxide Half-Nanotube-Modified Boron-Doped Diamond Electrode for the Detection of L-Serine.

    PubMed

    Dai, Wei; Li, Hongji; Li, Mingji; Li, Cuiping; Wu, Xiaoguo; Yang, Baohe

    2015-10-21

    This paper presents a novel and versatile method for the fabrication of half nanotubes (HNTs) using a flexible template-based nanofabrication method denoted as electrochemical imprinting. With use of this method, polycrystalline nickel and nickel(II) oxide (Ni-NiO) HNTs were synthesized using pulsed electrodeposition to transfer Ni, deposited by radio frequency magnetron sputtering on a porous polytetrafluoroethylene template, onto a boron-doped diamond (BDD) film. The Ni-NiO HNTs exhibited semicircular profiles along their entire lengths, with outer diameters of 50-120 nm and inner diameters of 20-50 nm. The HNT walls were formed of Ni and NiO nanoparticles. A biosensor for the detection of L-serine was fabricated using a BDD electrode modified with Ni-NiO HNTs, and the device demonstrated satisfactory analytical performance with high sensitivity (0.33 μA μM(-1)) and a low limit of detection (0.1 μM). The biosensor also exhibited very good reproducibility and stability, as well as a high anti-interference ability against amino acids such as L-leucine, L-tryptophan, L-cysteine, L-phenylalanine, L-arginine, and L-lysine.

  2. Molecular Signature of Pseudomonas aeruginosa with Simultaneous Nanomolar Detection of Quorum Sensing Signaling Molecules at a Boron-Doped Diamond Electrode

    PubMed Central

    Buzid, Alyah; Shang, Fengjun; Reen, F. Jerry; Muimhneacháin, Eoin Ó; Clarke, Sarah L.; Zhou, Lin; Luong, John H. T.; O’Gara, Fergal; McGlacken, Gerard P.; Glennon, Jeremy D.

    2016-01-01

    Electroanalysis was performed using a boron-doped diamond (BDD) electrode for the simultaneous detection of 2-heptyl-3-hydroxy-4-quinolone (PQS), 2-heptyl-4-hydroxyquinoline (HHQ) and pyocyanin (PYO). PQS and its precursor HHQ are two important signal molecules produced by Pseudomonas aeruginosa, while PYO is a redox active toxin involved in virulence and pathogenesis. This Gram-negative and opportunistic human pathogen is associated with a hospital-acquired infection particularly in patients with compromised immunity and is the primary cause of morbidity and mortality in cystic fibrosis (CF) patients. Early detection is crucial in the clinical management of this pathogen, with established infections entering a biofilm lifestyle that is refractory to conventional antibiotic therapies. Herein, a detection procedure was optimized and proven for the simultaneous detection of PYO, HHQ and PQS in standard mixtures, biological samples, and P. aeruginosa spiked CF sputum samples with remarkable sensitivity, down to nanomolar levels. Differential pulse voltammetry (DPV) scans were also applicable for monitoring the production of PYO, HHQ and PQS in P. aeruginosa PA14 over 8 h of cultivation. The simultaneous detection of these three compounds represents a molecular signature specific to this pathogen. PMID:27427496

  3. Molecular Signature of Pseudomonas aeruginosa with Simultaneous Nanomolar Detection of Quorum Sensing Signaling Molecules at a Boron-Doped Diamond Electrode

    NASA Astrophysics Data System (ADS)

    Buzid, Alyah; Shang, Fengjun; Reen, F. Jerry; Muimhneacháin, Eoin Ó.; Clarke, Sarah L.; Zhou, Lin; Luong, John H. T.; O’Gara, Fergal; McGlacken, Gerard P.; Glennon, Jeremy D.

    2016-07-01

    Electroanalysis was performed using a boron-doped diamond (BDD) electrode for the simultaneous detection of 2-heptyl-3-hydroxy-4-quinolone (PQS), 2-heptyl-4-hydroxyquinoline (HHQ) and pyocyanin (PYO). PQS and its precursor HHQ are two important signal molecules produced by Pseudomonas aeruginosa, while PYO is a redox active toxin involved in virulence and pathogenesis. This Gram-negative and opportunistic human pathogen is associated with a hospital-acquired infection particularly in patients with compromised immunity and is the primary cause of morbidity and mortality in cystic fibrosis (CF) patients. Early detection is crucial in the clinical management of this pathogen, with established infections entering a biofilm lifestyle that is refractory to conventional antibiotic therapies. Herein, a detection procedure was optimized and proven for the simultaneous detection of PYO, HHQ and PQS in standard mixtures, biological samples, and P. aeruginosa spiked CF sputum samples with remarkable sensitivity, down to nanomolar levels. Differential pulse voltammetry (DPV) scans were also applicable for monitoring the production of PYO, HHQ and PQS in P. aeruginosa PA14 over 8 h of cultivation. The simultaneous detection of these three compounds represents a molecular signature specific to this pathogen.

  4. Simultaneous determination of eleven compounds related to metabolism of bioamines in rat cortex and hippocampus by HPLC-ECD with boron-doped diamond working electrode.

    PubMed

    Zhang, Lu; Yang, Jun-qing; Luo, Ying; Shang, Jing-chuan; Jiang, Xin-hui

    2016-01-25

    A simple and rapid high-performance liquid chromatography method with electrochemical detection employing boron-doped diamond electrode (BDD) was established for simultaneous determination of eleven bioamines with their precursor amino acids and metabolites, including two precursors (tyrosine and tryptophan), three catecholamines (dopamine, norepinephrine and epinephrine) and their four metabolites (3,4-dihydroxyphenylacetic acid, 3-methoxytyramine, homovanillic acid, and 3-methoxy-4-hydroxyphenylglycol), as well as serotonin and its metabolite (5-hydroxyindoleacetic acid), in a single run of 20 min using vanillic acid as internal standard. The separation was performed on an ODS2 column (250 mm × 4.6 mm, 5.0 μm) with column oven temperature of 30 °C. Quantification was accomplished at an oxidation potential of 700 mV vs Ag/AgCl reference electrode after a range of applied voltages were tested. Several parameters of this new chromatographic method were validated after optimizaton of the analytical conditions. The new method was successfully applied to test cortex and hippocampus samples from Sprague-Dawley rats with good separation. These eleven compounds in cortices and hippocampi were compared, which was used for monitoring their variations in neuroscience research.

  5. Thermophysical and Magnetic Properties of Carbon Beads Containing Nickel Nanocrystallites

    NASA Astrophysics Data System (ADS)

    Skumiel, A.; Izydorzak, M.; Leonowicz, M.; Pomogailo, A. D.; Dzhardimalieva, G. I.

    2011-09-01

    Ferromagnetic and superparamagnetic nickel nanocrystallites, stabilized in a carbon matrix, were prepared by a three-step procedure including formation of a Ni acrylamide complex, followed by frontal polymerization and pyrolysis of the polymer at various temperatures. It was found that the procedure applied enables fabrication of magnetic beads containing metallic nanocrystallites embedded in a carbon matrix. The size of the crystallites, their morphology, volume fraction, and magnetic properties can be tailored by the pyrolysis temperature. The size of the crystallites affects their behavior in an external magnetic field, i.e., a heating process is the most effective for a sample pyrolyzed at 873 K. The revealed H n-type dependence of the temperature increase rate, (d T/d t) t=0, on the amplitude of the magnetic field indicates the presence of both superparamagnetic and ferromagnetic particles in all the samples studied since n > 2. For the superparamagnetic particles, the heating mechanism is associated with Néel relaxation. For the lower values of the magnetic field amplitude, H < H 0, the relaxation losses dominate whereas for the opposite case, H > H 0, the magnetic hysteresis is the main source of thermal energy losses. The composites containing magnetic Ni nanocrystallites entrapped in a carbon matrix can be potentially applied for hyperthermia treatment.

  6. Industrial diamond

    USGS Publications Warehouse

    Olson, D.W.

    2012-01-01

    Estimated 2011 world production of natural and synthetic industrial diamond was about 4.45 billion carats. During 2011, natural industrial diamonds were produced in more than 20 countries, and synthetic industrial diamond was produced in at least 13 countries. About 98 percent of the combined natural and synthetic global output was produced in China, Ireland, Japan, Russia, South Africa and the United States. China is the world's leading producer of synthetic industrial diamond followed by Russia and the United States.

  7. Industrial diamond

    USGS Publications Warehouse

    Olson, D.W.

    2013-01-01

    Estimated 2012 world production of natural and synthetic industrial diamond was about 4.45 billion carats. During 2012, natural industrial diamonds were produced in at least 20 countries, and synthetic industrial diamond was produced in at least 12 countries. About 99 percent of the combined natural and synthetic global output was produced in Belarus, China, Ireland, Japan, Russia, South Africa and the United States. During 2012, China was the world’s leading producer of synthetic industrial diamond followed by the United States and Russia. In 2012, the two U.S. synthetic producers, one in Pennsylvania and the other in Ohio, had an estimated output of 103 million carats, valued at about $70.6 million. This was an estimated 43.7 million carats of synthetic diamond bort, grit, and dust and powder with a value of $14.5 million combined with an estimated 59.7 million carats of synthetic diamond stone with a value of $56.1 million. Also in 2012, nine U.S. firms manufactured polycrystalline diamond (PCD) from synthetic diamond grit and powder. The United States government does not collect or maintain data for either domestic PCD producers or domestic chemical vapor deposition (CVD) diamond producers for quantity or value of annual production. Current trade and consumption quantity data are not available for PCD or for CVD diamond. For these reasons, PCD and CVD diamond are not included in the industrial diamond quantitative data reported here.

  8. Industrial diamond

    USGS Publications Warehouse

    Olson, D.W.

    2011-01-01

    Estimated world production of natural and synthetic industrial diamond was about 4.44 billion carats in 2010. Natural industrial diamond deposits have been found in more than 35 countries, and synthetic industrial diamond is produced in at least 15 countries.

  9. Industrial diamond

    USGS Publications Warehouse

    Olson, D.W.

    2006-01-01

    In 2005, estimated world production of natural and synthetic industrial diamond was 630 million carats. Natural industrial diamond deposits were found in more than 35 countries. Synthetic industrial diamond is produced in at least 15 countries. More than 81% of the combined natural and synthetic global output was produced in Ireland, Japan, Russia, South Africa and the United States.

  10. Ultrananocrystalline diamond contacts for electronic devices

    SciTech Connect

    Sumant, Anirudha V.; Smedley, John; Muller, Erik

    2016-11-01

    A method of forming electrical contacts on a diamond substrate comprises producing a plasma ball using a microwave plasma source in the presence of a mixture of gases. The mixture of gases include a source of a p-type or an n-type dopant. The plasma ball is disposed at a first distance from the diamond substrate. The diamond substrate is maintained at a first temperature. The plasma ball is maintained at the first distance from the diamond substrate for a first time, and a UNCD film, which is doped with at least one of a p-type dopant and an n-type dopant, is disposed on the diamond substrate. The doped UNCD film is patterned to define UNCD electrical contacts on the diamond substrate.

  11. Diamond optics V; Proceedings of the Meeting, San Diego, CA, July 20, 21, 1992

    SciTech Connect

    Feldman, A.; Sandor, H.

    1992-01-01

    Attention is given to unconventional diamond and DLC deposition processes, deposition characterization; diamond characterization, and structural, thermal, and optical properties. Particular attention is given to diamond CVD growth chemistry; a synthesis technique of diamondlike carbon films by a laser ablation ion source in the atmosphere; mass spectrometry studies of diamond deposition; characterization of electron cyclotron resonance plasmas for diamond deposition; thinning and polishing of diamond films by a diffusional reaction with metals; twin quituplets in a CVD diamond; characterization of diamond films deposited by hot-filament CVD using CF4 as a doping gas by Raman spectroscopy, FTIR spectroscopy, and atomic force microscopy; properties of optically smooth diamond thin films produced by ECR-PACVD; calculations of energy barriers to CVD diamon growth; thermal properties of optical-quality diamond films; attenuated total reflectance infrared absorption in CVD diamond films; and optical properties of boron-doped diamond films.

  12. Industrial diamond

    USGS Publications Warehouse

    Olson, D.W.

    2000-01-01

    Part of the 1999 Industrial Minerals Review. A review of the state of the global industrial diamond industry in 1999 is presented. World consumption of industrial diamond has increased annually in recent years, with an estimated 500 million carats valued between $650 million and $800 million consumed in 1999. In 1999, the U.S. was the world's largest market for industrial diamond and was also one of the world's main producers; the others were Ireland, Russia, and South Africa. Uses of industrial diamonds are discussed, and prices of natural and synthetic industrial diamond are reported.

  13. Controlled Nucleation and Growth of Semiconducting Diamond

    DTIC Science & Technology

    1992-12-18

    analytical measurements of film growth have been coupled with novel precursor chemistry to study the effect of precursor chemical structure on the...efficiency of diamond film nucleation and growth. The goal is to optimize source gases and substrate surface preparation methods for both doped and...undoped diamond film nucleation and growth, enabling the use of diamond in field emission, semiconductor, and optoelectronic applications. "Surface

  14. Mineralization of salicylic acid in acidic aqueous medium by electrochemical advanced oxidation processes using platinum and boron-doped diamond as anode and cathodically generated hydrogen peroxide.

    PubMed

    Guinea, Elena; Arias, Conchita; Cabot, Pere Lluís; Garrido, José Antonio; Rodríguez, Rosa María; Centellas, Francesc; Brillas, Enric

    2008-01-01

    Solutions containing 164 mg L(-1) salicylic acid of pH 3.0 have been degraded by electrochemical advanced oxidation processes such as anodic oxidation, anodic oxidation with electrogenerated H(2)O(2), electro-Fenton, photoelectro-Fenton and solar photoelectro-Fenton at constant current density. Their oxidation power has been comparatively studied in a one-compartment cell with a Pt or boron-doped diamond (BDD) anode and a graphite or O(2)-diffusion cathode. In the three latter procedures, 0.5mM Fe(2+) is added to the solution to form hydroxyl radical (()OH) from Fenton's reaction between Fe(2+) and H(2)O(2) generated at the O(2)-diffusion cathode. Total mineralization is attained for all methods with BDD and for photoelectro-Fenton and solar photoelectro-Fenton with Pt. The poor decontamination achieved in anodic oxidation and electro-Fenton with Pt is explained by the slow removal of most pollutants by ()OH formed from water oxidation at the Pt anode in comparison to their quick destruction with ()OH produced at BDD. ()OH generated from Fenton's reaction oxidizes rapidly all aromatic pollutants, but it cannot destroy final Fe(III)-oxalate complexes. Solar photoelectro-Fenton treatments always yield quicker degradation rate due to the very fast photodecarboxylation of these complexes by UVA irradiation supplied by solar light. The effect of current density on the degradation rate, efficiency and energy cost of all methods is examined. The salicylic acid decay always follows a pseudo-first-order kinetics. 2,3-Dihydroxybenzoic, 2,5-dihydroxybenzoic, 2,6-dihydroxybenzoic, alpha-ketoglutaric, glycolic, glyoxylic, maleic, fumaric, malic, tartronic and oxalic acids are detected as oxidation products. A general reaction sequence for salicylic acid mineralization considering all these intermediates is proposed.

  15. A novel paper-based device coupled with a silver nanoparticle-modified boron-doped diamond electrode for cholesterol detection.

    PubMed

    Nantaphol, Siriwan; Chailapakul, Orawon; Siangproh, Weena

    2015-09-03

    A novel paper-based analytical device (PAD) coupled with a silver nanoparticle-modified boron-doped diamond (AgNP/BDD) electrode was first developed as a cholesterol sensor. The AgNP/BDD electrode was used as working electrode after modification by AgNPs using an electrodeposition method. Wax printing was used to define the hydrophilic and hydrophobic areas on filter paper, and then counter and reference electrodes were fabricated on the hydrophilic area by screen-printing in house. For the amperometric detection, cholesterol and cholesterol oxidase (ChOx) were directly drop-cast onto the hydrophilic area, and H2O2 produced from the enzymatic reaction was monitored. The fabricated device demonstrated a good linearity (0.39 mg dL(-1) to 270.69 mg dL(-1)), low detection limit (0.25 mg dL(-1)), and high sensitivity (49.61 μA mM(-1) cm(-2)). The precision value for ten replicates was 3.76% RSD for 1 mM H2O2. In addition, this biosensor exhibited very high selectivity for cholesterol detection and excellent recoveries for bovine serum analysis (in the range of 99.6-100.8%). The results showed that this new sensing platform will be an alternative tool for cholesterol detection in routine diagnosis and offers the advantages of low sample/reagent consumption, low cost, portability, and short analysis time.

  16. 4-Hydroxyphenylacetic acid oxidation in sulfate and real olive oil mill wastewater by electrochemical advanced processes with a boron-doped diamond anode.

    PubMed

    Flores, Nelly; Cabot, Pere Lluís; Centellas, Francesc; Garrido, José Antonio; Rodríguez, Rosa María; Brillas, Enric; Sirés, Ignasi

    2017-01-05

    The degradation of 4-hydroxyphenylacetic acid, a ubiquitous component of olive oil mill wastewater (OOMW), has been studied by anodic oxidation with electrogenerated H2O2 (AO-H2O2), electro-Fenton (EF) and photoelectro-Fenton (PEF). Experiments were performed in either a 0.050M Na2SO4 solution or a real OOMW at pH 3.0, using a cell with a boron-doped diamond (BDD) anode and an air-diffusion cathode for H2O2 generation. Hydroxyl radicals formed at the BDD surface from water oxidation in all processes and/or in the bulk from Fenton's reaction between added Fe(2+) and generated H2O2 in EF and PEF were the main oxidants. In both matrices, the oxidation ability of the processes increased in the order AO-H2O2

  17. n-Type diamond and method for producing same

    DOEpatents

    Anderson, Richard J.

    2002-01-01

    A new n-type semiconducting diamond is disclosed, which is doped with n-type dopant atoms. Such diamond is advantageously formed by chemical vapor deposition from a source gas mixture comprising a carbon source compound for the diamond, and a volatile hot wire filament for the n-type impurity species, so that the n-type impurity atoms are doped in the diamond during its formation. A corresponding chemical vapor deposition method of forming the n-type semiconducting diamond is disclosed. The n-type semiconducting diamond of the invention may be usefully employed in the formation of diamond-based transistor devices comprising pn diamond junctions, and in other microelectronic device applications.

  18. Generation of microdischarges in diamond substrates

    NASA Astrophysics Data System (ADS)

    Mitea, S.; Zeleznik, M.; Bowden, M. D.; May, P. W.; Fox, N. A.; Hart, J. N.; Fowler, C.; Stevens, R.; StJ Braithwaite, N.

    2012-04-01

    We report the generation of microdischarges in devices composed of microcrystalline diamond. Discharges were generated in device structures with microhollow cathode discharge geometries. One structure consisted of an insulating diamond wafer coated with boron-doped diamond layers on both sides. A second structure consisted of an insulating diamond wafer coated with metal layers on both sides. In each case, a single sub-millimetre hole was machined through the conductor-insulator-conductor structure. The discharges were generated in a helium atmosphere. Breakdown voltages were around 500 V and discharge currents in the range 0.1-2.5 mA were maintained by a sustaining dc voltage of 300 V.

  19. Prospects of bipolar diamond devices

    NASA Astrophysics Data System (ADS)

    Aleksov, A.; Denisenko, A.; Kohn, E.

    2000-02-01

    The prospects of diamond bipolar devices are analysed theoretically and experimentally in respect to the problem of deep doping, especially the deep donor in diamond. For this purpose a set of p- n- p bipolar junction transistors (BJTs) is fabricated on p-type diamond substrates by epitaxial growth using boron ( EA=0.4 eV) and nitrogen ( ED=1.7 eV) as the p- and n-type dopants respectively. It is shown that at the boron/nitrogen junction a p- n junction is formed. The built-in potential of the junction is determined by the ionised boron/nitrogen impurities. The specific features of the fabricated devices are the high resistivity of the nitrogen doped base (10 GΩ·cm at 20°C) and a significant leakage current of the reverse biased p- n junctions. These factors limit the transistor action to d.c.-operation in the nA-current range and to temperatures below 200°C where leakage starts to dominate. The values of the static current gain IC/ IB are measured in the common base mode 200 and in the common emitter mode 1.1. The theoretical section of the paper deals with the calculation of the static current gain of diamond pnp transistor structures in dependence of the donor energy level, temperature and frequency. Both the theoretical and the experimental results indicate that diamond bipolar transistors with a nitrogen doped n-type base can exhibit a current gain β of up to 30,000 in the d.c.-regime provided the leakage of the p- n junctions is sufficiently low. High-gain diamond transistors operating in GHz-frequency can be expected as soon as n-doping by shallow donor like phosphorous ( ED<0.5 eV) becomes available.

  20. Investigation of electrochemical behavior of lipid lowering agent atorvastatin calcium in aqueous media and its determination from pharmaceutical dosage forms and biological fluids using boron-doped diamond and glassy carbon electrodes.

    PubMed

    Dogan-Topal, Burcu; Uslu, Bengi; Ozkan, Sibel A

    2007-08-01

    The electrochemical behavior of atorvastatin calcium at glassy carbon and boron-doped diamond electrodes has been studied using voltammetric techniques. The possible mechanism of oxidation was discussed with model compounds. The dependence of the peak current and potentials on pH, concentration, scan rate and nature of the buffer were investigated for both electrodes. The oxidation of atorvastatin was irreversible and exhibited a diffusion-controlled fashion on the diamond electrode. A linear response was obtained within the range of 9.65 x 10(-7) - 3.86 x 10(-5) M in 0.1 M H(2)SO(4) solution for both electrodes. The detection limits of a standard solution are estimated to be 2.11 x 10(-7) M with differential pulse voltammetry (DPV) and 2.05 x 10(-7)M with square wave voltammetry (SWV) for glassy carbon electrode, and 2.27 x 10(-7) M with DPV and 1.31 x 10(-7)M with SWV for diamond electrodes in 0.1 M H(2)SO(4) solution. The repeatability of the methods was found good for both electrodes. The methods were fully validated and successfully applied to the high-throughput determination of the drug in tablets, human serum and human urine with good recoveries.

  1. Diamond Coatings

    NASA Technical Reports Server (NTRS)

    1990-01-01

    Advances in materials technology have demonstrated that it is possible to get the advantages of diamond in a number of applications without the cost penalty, by coating and chemically bonding an inexpensive substrate with a thin film of diamond-like carbon (DLC). Diamond films offer tremendous technical and economic potential in such advances as chemically inert protective coatings; machine tools and parts capable of resisting wear 10 times longer; ball bearings and metal cutting tools; a broad variety of optical instruments and systems; and consumer products. Among the American companies engaged in DLC commercialization is Diamonex, Inc., a diamond coating spinoff of Air Products and Chemicals, Inc. Along with its own proprietary technology for both polycrystalline diamond and DLC coatings, Diamonex is using, under an exclusive license, NASA technology for depositing DLC on a substrate. Diamonex is developing, and offering commercially, under the trade name Diamond Aegis, a line of polycrystalline diamond-coated products that can be custom tailored for optical, electronic and engineering applications. Diamonex's initial focus is on optical products and the first commercial product is expected in late 1990. Other target applications include electronic heat sink substrates, x-ray lithography masks, metal cutting tools and bearings.

  2. Industrial diamond

    USGS Publications Warehouse

    Olson, D.W.

    2007-01-01

    World production of natural and synthetic industrial diamond was about 648 million carats in 2006, with 79 percent of the production coming from Ireland, Japan, Russia, South Africa, and the U.S. U.S. consumption was was an estimated 602 million carats, imports were over 391 million carats, and exports were about 83 million carats. About 87 percent of the industrial diamonds market uses synthetic diamonds, which are expected to become less expensive as technology improves and competition from low-cost producers increases.

  3. Precipitation of heterogeneous nanostructures: Metal nanoparticles and dielectric nanocrystallites

    SciTech Connect

    Masai, Hirokazu; Takahashi, Yoshihiro; Fujiwara, Takumi; Tokuda, Yomei; Yoko, Toshinobu

    2010-07-15

    Heterogeneous precipitation of nanocrystallites of metallic Bi and anatase was observed in CaO-Bi{sub 2}O{sub 3}-B{sub 2}O{sub 3}-Al{sub 2}O{sub 3}-TiO{sub 2} glass-ceramics. Addition of AlN reduced the Bi{sub 2}O{sub 3} to Bi metal nanoparticles, which were uniformly dispersed in the glass. After heat-treatment of the Bi-precipitated glass around the glass transition temperature, nanocrystalline anatase precipitated out without aggregation of the Bi metal particles. It was found that the anatase nanocrystal size was affected by the distance between a nanocrystal and a precipitated Bi nanoparticle. The glass-ceramic produced is a functional material containing a random dispersion of different types of nanoparticles with different dielectric constants.

  4. Industrial diamond

    USGS Publications Warehouse

    Olson, D.W.

    2004-01-01

    Part of the 2003 industrial minerals review. Supply and demand data for industrial diamond are provided. Topics discussed are consumption, prices, imports and exports, government stockpiles, and the outlook for 2004.

  5. Diamond fiber field emitters

    DOEpatents

    Blanchet-Fincher, Graciela B.; Coates, Don M.; Devlin, David J.; Eaton, David F.; Silzars, Aris K.; Valone, Steven M.

    1996-01-01

    A field emission electron emitter comprising an electrode formed of at least one diamond, diamond-like carbon or glassy carbon composite fiber, said composite fiber having a non-diamond core and a diamond, diamond-like carbon or glassy carbon coating on said non-diamond core, and electronic devices employing such a field emission electron emitter.

  6. High-energy-surface engineered metal oxide micro- and nanocrystallites and their applications.

    PubMed

    Kuang, Qin; Wang, Xue; Jiang, Zhiyuan; Xie, Zhaoxiong; Zheng, Lansun

    2014-02-18

    Because many physical and chemical processes occur at surfaces, surface atomic structure is a critical factor affecting the properties of materials. Due to the presence of high-density atomic steps and edges and abundant unsaturated coordination sites, micro- and nanocrystallites with high-energy surfaces usually exhibit greater reactivity than those with low-energy surfaces. However, high-energy crystal surfaces are usually lost during crystal growth as the total surface energy is minimized. Therefore, the selective exposure of high-energy facets at the surface of micro- and nanocrystallites is an important and challenging research topic. Metal oxides play important roles in surface-associated applications, including catalysis, gas sensing, luminescence, and antibiosis. The synthesis of metal oxide micro- and nanocrystallites with specific surfaces, particularly those with high surface energies, is more challenging than the synthesis of metal crystals due to the presence of strong metal-oxygen bonds and diverse crystal structures. In this Account, we briefly summarize recent progress in the surface-structure-controlled synthesis of several typical metal oxide micro- and nanocrystallites, including wurtzite ZnO, anatase TiO2, rutile SnO2, and rocksalt-type metal oxides. We also discuss the improvement of surface properties, focusing on high-energy surfaces. Because of the huge quantity and diverse structure of metal oxides, this Account is not intended to be comprehensive. Instead, we discuss salient features of metal oxide micro- and nanocrystallites using examples primarily from our group. We first discuss general strategies for tuning the surface structure of metal oxide micro- and nanocrystallites, presenting several typical examples. For each example, we describe the basic crystallographic characteristics as well as the thermodynamic (i.e., tuning surface energy) or kinetic (i.e., tuning reaction rates) strategies we have used to synthesize micro- and

  7. Thermophysical and Magnetic Properties of Carbon Beads Containing Cobalt Nanocrystallites

    NASA Astrophysics Data System (ADS)

    Izydorzak, M.; Skumiel, A.; Leonowicz, M.; Kaczmarek-Klinowska, M.; Pomogailo, A. D.; Dzhardimalieva, G. I.

    2012-04-01

    Magnetic Co-beads were fabricated in the course of a three-step procedure comprising preparation of a metal-acrylamide complex, followed by frontal polymerization and finally pyrolysis of the polymer. The composites obtained were composed of cobalt nanocrystallites stabilized in a carbon matrix built of disordered graphite. The crystallite size, material morphology, fraction of the magnetic component, and thus the magnetic properties can be tailored by a proper choice of the processing variables. The samples were subjected to an alternating magnetic field of different strengths ( H = 0 to 5 kA · m-1) at a frequency of f = 500 kHz. From the calorimetric measurements, we concluded that the relaxation processes dominate in the heat generation mechanism for the beads pyrolyzed at 773 K. For the beads pyrolyzed at 1073 K, significant values of magnetic properties, such as the coercive force and remanence give substantial contribution to the energy losses for hysteresis. The specific absorption coefficient ( SAR) related to the cobalt mass unit for the 1073 K pyrolyzed beads {({SAR} = 1340 W \\cdot g^{-1 }_cobalt)} is in very good conformity with the results obtained by other authors. The effective density power loss, caused by eddy currents, can be neglected for heating processes applied in magnetic hyperthermia. The Co-beads can potentially be applied for hyperthermia treatment.

  8. Preparation of zinc sulfide nanocrystallites from single-molecule precursors

    NASA Astrophysics Data System (ADS)

    Palve, Anil M.; Garje, Shivram S.

    2011-07-01

    Zinc sulfide nanocrystallites were prepared using Zinc(II) thiosemicarbazone complexes of the types Zn(L) 2 and ZnCl 2(LH) 2 (where, LH=thiosemicarbazones of cinnamaldehyde, 4-chlorobenzaldehyde, indol-3-carboxaldehyde and thiophene-2-carboxaldehyde) as single source precursors by solvothermal decomposition in ethylene glycol and ethylene diamine in few cases. The materials were characterized by powder X-ray diffraction (XRD), transmission electron microscopy (TEM), selected area electron diffraction, energy dispersive X-ray analysis and UV-vis and IR spectroscopy. Solvothermal decomposition in ethylene glycol resulted in the formation of hexagonal ZnS (JCPDS: 36-1450) as evident from the XRD patterns. However, XRD shows formation of hybrid material, ZnS 0.5EN in case of solvothermal decomposition in ethylenediamine. Infrared spectra authenticate the capping of ethylene glycol and ethylenediamine on ZnS and ZnS 0.5EN, respectively. TEM images showed formation of spherical nanoparticles for the materials obtained from ethylene glycol, whereas plate-like morphology is observed in case of materials obtained from ethylene diamine. The blue shift of absorption bands compared to bands of bulk materials in the UV-vis spectra supports the formation of smaller particles.

  9. Controlled incorporation of mid-to-high Z transition metals in CVD diamond

    SciTech Connect

    Biener, M M; Biener, J; Kucheyev, S O; Wang, Y M; El-Dasher, B; Teslich, N E; Hamza, A V; Obloh, H; Mueller-Sebert, W; Wolfer, M; Fuchs, T; Grimm, M; Kriele, A; Wild, C

    2010-01-08

    We report on a general method to fabricate transition metal related defects in diamond. Controlled incorporation of Mo and W in synthetic CVD diamond was achieved by adding volatile metal precursors to the diamond chemical vapor deposition (CVD) growth process. Effects of deposition temperature, grain structure and precursor exposure on the doping level were systematically studied, and doping levels of up to 0.25 at.% have been achieved. The metal atoms are uniformly distributed throughout the diamond grains without any indication of inclusion formation. These results are discussed in context of the kinetically controlled growth process of CVD diamond.

  10. Exchange bias magnetism in films of NiFe/(Ni,Fe)O nanocrystallite dispersions

    SciTech Connect

    Hsiao, C.-H.; Chi, C.-C.; Wang, S.; Ouyang, H.; Desautels, R. D.; Lierop, J. van; Lin, K.-W.; Lin, T.-L.

    2014-05-07

    Ni{sub 3}Fe/(Ni,Fe)O thin films having a nanocrystallite dispersion morphology were prepared by a reactive ion beam-assisted deposition technique. The crystallite sizes of these dispersion-based films were observed to decrease from 8.4 ± 0.3 nm to 3.4 ± 0.3 nm as the deposition flow-rate increased from 2.78% to 7.89% O{sub 2}/Ar. Thin film composition was determined using selective area electron diffraction images and Multislice simulations. Through a detailed analysis of high resolution transmission electron microscopy images, the nanocrystallites were determined to be Ni{sub 3}Fe (a ferromagnet), NiO, and FeO (both antiferromagnets). It was determined that the interfacial molar Ni{sub 3}Fe ratio in the nanocrystallite dispersions increased slightly at first, then decreased as the oxygen content was increased; at 7.89% O{sub 2}/Ar, the interfacial molar ratio was essentially zero (only NiO and FeO remained). For nanocrystallite dispersion films grown with O{sub 2}/Ar flow-rate greater than 7.89%, no interfacial (intermixed) Ni{sub 3}Fe phase was detected, which resulted in no measurable exchange bias. Comparing the exchange bias field between the nanocrystallite dispersion films at 5 K, we observed a decrease in the magnitude of the exchange bias field as the nanocrystallite size decreased. The exchange bias coupling for all samples measured set in at essentially the same temperature (i.e., the exchange bias blocking temperature). Since the ferromagnetic/anti-ferromagnetic (FM/AFM) contact area in the nanocrystallite dispersion films increased as the nanocrystallite size decreased, the increase in the magnitude of the exchange bias could be attributed to larger regions of defects (vacancies and bond distortions) which occupied a significant portion of the FM/AFM interfaces in the nanocrystallite dispersion films.

  11. In situ optimization of pH for parts-per-billion electrochemical detection of dissolved hydrogen sulfide using boron doped diamond flow electrodes.

    PubMed

    Bitziou, Eleni; Joseph, Maxim B; Read, Tania L; Palmer, Nicola; Mollart, Tim; Newton, Mark E; Macpherson, Julie V

    2014-11-04

    A novel electrochemical approach to the direct detection of hydrogen sulfide (H2S), in aqueous solutions, covering a wide pH range (acid to alkali), is described. In brief, a dual band electrode device is employed, in a hydrodynamic flow cell, where the upstream electrode is used to controllably generate hydroxide ions (OH(-)), which flood the downstream detector electrode and provide the correct pH environment for complete conversion of H2S to the electrochemically detectable, sulfide (HS(-)) ion. All-diamond, coplanar conducting diamond band electrodes, insulated in diamond, were used due to their exceptional stability and robustness when applying extreme potentials, essential attributes for both local OH(-) generation via the reduction of water, and for in situ cleaning of the electrode, post oxidation of sulfide. Using a galvanostatic approach, it was demonstrated the pH locally could be modified by over five pH units, depending on the initial pH of the mobile phase and the applied current. Electrochemical detection limits of 13.6 ppb sulfide were achieved using flow injection amperometry. This approach which offers local control of the pH of the detector electrode in a solution, which is far from ideal for optimized detection of the analyte of interest, enhances the capabilities of online electrochemical detection systems.

  12. Electronic structure and optical transition of semiconductor nanocrystallites

    NASA Astrophysics Data System (ADS)

    Xia, Jian-Bai; Cheah, K. W.

    1997-11-01

    The electronic states and optical transition properties of three semiconductor nanocrystallites, Si, GaAs, and ZnSe, are studied using the empirical pseudopotential homojunction model. The energy levels, wave functions, optical transition matrix elements, and lifetimes are obtained for quadratic prisms with widths from 11 to 27 Å. It is found that the three kinds of prism have different quantum confinement properties. For Si prisms, the energy gaps vary with the equivalent diameter d as 0953-8984/9/45/013/img1, in agreement with previous theoretical calculations. For the same d the energy gaps are slightly different for different shapes: large for the prism with large aspect ratio; small for the prism with small aspect ratio. The exponent of d depends on the boundary barrier height, i.e. the extent of penetration of the wave function into the vacuum. The wave function of the LUMO states consists mainly of bulk X states. The optical transition matrix elements are much smaller than those of direct transition, and increase with decreasing width. The corresponding lifetimes decrease from the millisecond range to the microsecond range, and the change is abrupt depending on the symmetry and composition of the wave function of the LUMO and HOMO states. For GaAs prisms, the energy gap is also pseudo-direct, but the optical transition matrix elements are larger than those of Si prisms by two orders of magnitude for the same width. For ZnSe prisms, the energy gap is always direct, and the optical transition matrix elements are comparable with those of direct energy gap bulk semiconductors. In some cases the symmetry of the HOMO state changes, resulting in an abrupt decrease of the transition matrix element. The calculated lifetimes of the Si prism and the positions of PL peaks are in agreement with experimental results for porous Si.

  13. A pathway of nanocrystallite fabrication by photo-assisted growth in pure water

    PubMed Central

    Jeem, Melbert; bin Julaihi, Muhammad Rafiq Mirza; Ishioka, Junya; Yatsu, Shigeo; Okamoto, Kazumasa; Shibayama, Tamaki; Iwasaki, Tomio; Kato, Takahiko; Watanabe, Seiichi

    2015-01-01

    We report a new production pathway for a variety of metal oxide nanocrystallites via submerged illumination in water: submerged photosynthesis of crystallites (SPSC). Similar to the growth of green plants by photosynthesis, nanocrystallites shaped as nanoflowers and nanorods are hereby shown to grow at the protruded surfaces via illumination in pure, neutral water. The process is photocatalytic, accompanied with hydroxyl radical generation via water splitting; hydrogen gas is generated in some cases, which indicates potential for application in green technologies. Together with the aid of ab initio calculation, it turns out that the nanobumped surface, as well as aqueous ambience and illumination are essential for the SPSC method. Therefore, SPSC is a surfactant-free, low-temperature technique for metal oxide nanocrystallites fabrication. PMID:26076674

  14. Diamond Tours

    NASA Technical Reports Server (NTRS)

    2007-01-01

    On April 24, a group traveling with Diamond Tours visited StenniSphere, the visitor center at NASA John C. Stennis Space Center in South Mississippi. The trip marked Diamond Tours' return to StenniSphere since Hurricane Katrina struck the Gulf Coast on Aug. 29, 2005. About 25 business professionals from Georgia enjoyed the day's tour of America's largest rocket engine test complex, along with the many displays and exhibits at the museum. Before Hurricane Katrina, the nationwide company brought more than 1,000 visitors to StenniSphere each month. That contributed to more than 100,000 visitors from around the world touring the space center each year. In past years StenniSphere's visitor relations specialists booked Diamond Tours two or three times a week, averaging 40 to 50 people per visit. SSC was established in the 1960s to test the huge engines for the Saturn V moon rockets. Now 40 years later, the center tests every main engine for the space shuttle. SSC will soon begin testing the rocket engines that will power spacecraft carrying Americans back to the moon and on to Mars. For more information or to book a tour, visit http://www.nasa.gov/centers/stennis/home/index.html and click on the StenniSphere logo; or call 800-237-1821 or 228-688-2370.

  15. Temperature dependent simulation of diamond depleted Schottky PIN diodes

    NASA Astrophysics Data System (ADS)

    Hathwar, Raghuraj; Dutta, Maitreya; Koeck, Franz A. M.; Nemanich, Robert J.; Chowdhury, Srabanti; Goodnick, Stephen M.

    2016-06-01

    Diamond is considered as an ideal material for high field and high power devices due to its high breakdown field, high lightly doped carrier mobility, and high thermal conductivity. The modeling and simulation of diamond devices are therefore important to predict the performances of diamond based devices. In this context, we use Silvaco® Atlas, a drift-diffusion based commercial software, to model diamond based power devices. The models used in Atlas were modified to account for both variable range and nearest neighbor hopping transport in the impurity bands associated with high activation energies for boron doped and phosphorus doped diamond. The models were fit to experimentally reported resistivity data over a wide range of doping concentrations and temperatures. We compare to recent data on depleted diamond Schottky PIN diodes demonstrating low turn-on voltages and high reverse breakdown voltages, which could be useful for high power rectifying applications due to the low turn-on voltage enabling high forward current densities. Three dimensional simulations of the depleted Schottky PIN diamond devices were performed and the results are verified with experimental data at different operating temperatures

  16. Diamond Analyzed by Secondary Electron Emission Spectroscopy

    NASA Technical Reports Server (NTRS)

    Krainsky, Isay L.

    1998-01-01

    Diamond is a promising semiconductor material for novel electronic applications because of its chemical stability and inertness, heat conduction properties, and so-called negative electron affinity (NEA). When a surface has NEA, electrons generated inside the bulk of the material are able to come out into the vacuum without any potential barrier (work function). Such a material would have an extremely high secondary electron emission coefficient o, very high photoelectron (quantum) yield, and would probably be an efficient field emitter. Chemical-vapor-deposited (CVD) polycrystalline diamond films have even more advantages than diamond single crystals. Their fabrication is relatively easy and inexpensive, and they can be grown with high levels of doping--consequently, they can have relatively high conductivity. Because of these properties, diamond can be used for cold cathodes and photocathodes in high-power electronics and in high-frequency and high-temperature semiconductor devices.

  17. Mutual relation among lattice distortion, Hall effect property and band edge cathodoluminescence of heavily-boron-doped microwave-plasma CVD diamond films homoepitaxially grown on vicinal (001) high-pressure/high-temperature-synthesized Ib substrates

    NASA Astrophysics Data System (ADS)

    Mori, Reona; Maida, Osamu; Ito, Toshimichi

    2015-04-01

    We have investigated properties of heavily-B-doped diamond (HBD) films homoepitaxially grown with boron-to-carbon (B/C) mole ratios ranging from 1000 to 5000 ppm in the source gas mainly by using X-Ray diffraction (XRD), cathodoluminescence (CL), and Hall effect measurements. Each HBD layer was deposited on a vicinal (001) substrate of high-pressure/high-temperature synthesized Ib-type diamond with 5° misorientation angle by means of high-power-density microwave-plasma chemical-vapor-deposition method with a source gas composed of 4% CH4 in H2 and H2-diluted B(CH3)3. XRD data indicated that the lattice constant of the B-doped layer slightly decreased for the B/C ratios≤3000 ppm while slightly increasing for that of 5000 ppm, suggesting that for the latter HBD sample a part of the incorporated B atoms behaved differently from the remaining other B atoms. By contrast the Hall data indicated that all the HBD samples had a degenerate feature only at temperatures well below room temperature (RT), above which a semiconducting feature was evident, and that the density of the degenerate holes steeply increased from 1.3×1019 to 1.2×1021 cm-3 with increases in the incorporated B density, [B], from 1.2×1020 to 5.9×1020 cm-3. This drastic change in the hole density strongly suggested the presence of a [B]-dependent impurity band. Their evident near-band-edge CL spectra taken at RT and 85 K demonstrated that radiative transition features in the HBD layers considerably varied for the B/C ratios studied. The CL peaks were consistently assigned by assuming both the presence of an impurity band and a slight bandgap shrinkage. These observed features are discussed in relation to the energy separation between the low-mobility impurity band assumed and the valence band in the high-quality HBD layer which are not merged in energy.

  18. Chemical analysis of impurity boron atoms in diamond using soft X-ray emission spectroscopy.

    PubMed

    Muramatsu, Yasuji; Iihara, Junji; Takebe, Toshihiko; Denlinger, Jonathan D

    2008-07-01

    To analyze the local structure and/or chemical states of boron atoms in boron-doped diamond, which can be synthesized by the microwave plasma-assisted chemical vapor deposition method (CVD-B-diamond) and the temperature gradient method at high pressure and high temperature (HPT-B-diamond), we measured the soft X-ray emission spectra in the CK and BK regions of B-diamonds using synchrotron radiation at the Advanced Light Source (ALS). X-ray spectral analyses using the fingerprint method and molecular orbital calculations confirm that boron atoms in CVD-B-diamond substitute for carbon atoms in the diamond lattice to form covalent B-C bonds, while boron atoms in HPT-B-diamond react with the impurity nitrogen atoms to form hexagonal boron nitride. This suggests that the high purity diamond without nitrogen impurities is necessary to synthesize p-type B-diamond semiconductors.

  19. Chemical Analysis of Impurity Boron Atoms in Diamond Using Soft X-ray Emission Spectroscopy

    SciTech Connect

    Muramatsu, Yasuji; Iihara, Junji; Takebe, Toshihiko; Denlinger, Jonathan D.

    2008-03-29

    To analyze the local structure and/or chemical states of boron atoms in boron-doped diamond, which can be synthesized by the microwave plasma-assisted chemical vapor deposition method (CVD-B-diamond) and the temperature gradient method at high pressure and high temperature (HPT-B-diamond), we measured the soft X-ray emission spectra in the CK and BK regions of B-diamonds using synchrotron radiation at the Advanced Light Source (ALS). X-ray spectral analyses using the fingerprint method and molecular orbital calculations confirm that boron atoms in CVD-B-diamond substitute for carbon atoms in the diamond lattice to form covalent B-C bonds, while boron atoms in HPT-B-diamond react with the impurity nitrogen atoms to form hexagonal boron nitride. This suggests that the high purity diamond without nitrogen impurities is necessary to synthesize p-type B-diamond semiconductors.

  20. Designing shallow donors in diamond

    NASA Astrophysics Data System (ADS)

    Moussa, Jonathan

    2015-03-01

    The production of n-type semiconducting diamond has been a long-standing experimental challenge. The first-principles simulation of shallow dopants in semiconductors has been a long-standing theoretical challenge. A desirable theoretical goal is to identify impurities that will act as shallow donors in diamond and assess their experimental viability. I will discuss this identification process for the LiN4 donor complex. It builds a scientific argument from several models and computational results in the absence of computational tools that are both trustworthy and computationally tractable for this task. I will compare the theoretical assessment of viability with recent experimental efforts to co-dope diamond with lithium and nitrogen. Finally, I discuss the computational tools needed to facilitate future work on this problem and some preliminary simulations of donors near diamond surfaces. Sandia National Laboratories is a multi-program lab managed and operated by Sandia Corp., a wholly owned subsidiary of Lockheed Martin Corp., for the U.S. Department of Energy's National Nuclear Security Administration under Contract DE-AC04-94AL85000.

  1. Probing the effect of intrinsic defects and dopants on the structural evolution and optical properties of ZnO nanocrystallites

    SciTech Connect

    Panda, N. R.; Sahu, D.; Acharya, B. S.; Nayak, P.

    2015-06-24

    Role of intrinsic defects and external impurities in modifying the structural and optical properties of ZnO nanostructures has been studied and discussed. ZnO nanocrystallites doped with B, N and S elements have been prepared by ultrasound assisted wet chemical method. Structural evolution of ZnO in presence of dopant ions has been studied by XRD and electron microscopic measurements. Elemental analysis like XPS has been carried out to ascertain the dopant configuration. A variation in crystallographic parameters and microstructure is found to be observed as impurity is incorporated into ZnO. This has been explained on the basis of the substitution of dopant at Zn{sup 2+} and O{sup −} sites rearranging the lattice. Optical absorption measurements and PL studies reflect a change in band gap of ZnO by impurity adsorption. Most of the cases, the band gap is found to be broadened which has been explained in the line of Moss-Burstein effect. The excitonic emission in ZnO is observed to blue shift supporting the above results and the defect emissions also get modified in terms of position and intensity. New PL bands observed have been assigned to the transitions related to the defect states present in the band gap of ZnO along with intrinsic defects.

  2. Diamond Field Emission Source using Transfer Mold Technique Prepared by Diamond Powder Seeding

    NASA Astrophysics Data System (ADS)

    Tezuka, Sachiaki; Matsuba, Yohei; Takahashi, Kohro

    Diamond thin films fabricated by MPCVD (microwave plasma chemical vapor deposition) are available for use as a field emitter material, because of its high mechanical quality, thermal conductivity, chemical stability, environmental tolerance, and NEA (negative electron affinity). Diode and triode emitter arrays using P-doped polycrystalline diamond were manufactured on a SiO2/Si(100) substrate with reverse pyramids formed by the transfer mold technique. As the diamond nucleation process, spin-coat seeding with pure diamond powder dispersed in isoamyl acetate has been introduced in place of the bias method. SEM (scanning electron microscopy) images and Raman spectroscopy indicate that the crystal quality of the diamond thin film fabricated by spin-coat seeding is superior to that fabricated by the bias method. The diamond crystal completely grew on top of the diode emitter by the US (ultrasonic) treatment in a diamond powder solution before spin-coat seeding. The tip radius was smaller than 50 nm. The beginning voltage of the emission of the diode emitter is 3 V after the DC glow discharge treatment in H2, which is lower than that of an emitter array fabricated by the bias method, 40 V. On the other hand, the emission of the diamond triode emitter starts at a gate voltage of only 0.5 V, and the emission current of 50∼60 mA is obtained at a gate voltage of 2 V.

  3. On the Fabrication and Behavior of Diamond Microelectromechanical Sensors (DMEMS)

    NASA Technical Reports Server (NTRS)

    Holmes, K.; Davidson, J. L.; Kang, W. P.; Howell, M.

    2001-01-01

    CVD (chemically vapor deposited) diamond films can be processed similar to "conventional" semiconductor device fabrication and as such can be used to achieve microelectromechanical structures (MEMS) also similar to, for example, silicon technology. Very small cantilever beams, membranes, stripes, tips, etc. can be constructed in doped and undoped diamond films and offer an array of choices in diamond with its known superior properties such as elastic modulus, high temperature semiconduction, high thermal conductivity, very low coefficient of expansion and numerous other diamond parameters. This paper will review the construction and behavior of the second generation DMEMS devices comprised as an accelerometer with a diamond diaphragm for use in very high G applications and a diamond pressure sensor for very high temperature and frequency response.

  4. First principles study of Fe in diamond: A diamond-based half metallic dilute magnetic semiconductor

    SciTech Connect

    Benecha, E. M.; Lombardi, E. B.

    2013-12-14

    Half-metallic ferromagnetic ordering in semiconductors, essential in the emerging field of spintronics for injection and transport of highly spin polarised currents, has up to now been considered mainly in III–V and II–VI materials. However, low Curie temperatures have limited implementation in room temperature device applications. We report ab initio Density Functional Theory calculations on the properties of Fe in diamond, considering the effects of lattice site, charge state, and Fermi level position. We show that the lattice sites and induced magnetic moments of Fe in diamond depend strongly on the Fermi level position and type of diamond co-doping, with Fe being energetically most favorable at the substitutional site in p-type and intrinsic diamond, while it is most stable at a divacancy site in n-type diamond. Fe induces spin polarized bands in the band gap, with strong hybridization between Fe-3d and C-2s,2p bands. We further consider Fe-Fe spin interactions in diamond and show that substitutional Fe{sup +1} in p-type diamond exhibits a half-metallic character, with a magnetic moment of 1.0 μ{sub B} per Fe atom and a large ferromagnetic stabilization energy of 33 meV, an order of magnitude larger than in other semiconductors, with correspondingly high Curie temperatures. These results, combined with diamond's unique properties, demonstrate that Fe doped p-type diamond is likely to be a highly suitable candidate material for spintronics applications.

  5. Microstructure and property of diamond-like carbon films with Al and Cr co-doping deposited using a hybrid beams system

    NASA Astrophysics Data System (ADS)

    Dai, Wei; Liu, Jingmao; Geng, Dongsen; Guo, Peng; Zheng, Jun; Wang, Qimin

    2016-12-01

    DLC films with weak carbide former Al and carbide former Cr co-doping (Al:Cr-DLC) were deposited by a hybrid beams system comprising an anode-layer linear ion beam source (LIS) and high power impulse magnetron sputtering using a gas mixture of C2H2 and Ar as the precursor. The doped Al and Cr contents were controlled via adjusting the C2H2 fraction in the gas mixture. The composition, microstructure, compressive stress, mechanical properties and tribological behaviors of the Al:Cr-DLC films were researched carefully using X-ray photoelectron spectroscopy, transmission electron microscopy, Raman spectroscopy, stress-tester, nanoindentation and ball-on-plate tribometer as function of the C2H2 fraction. The results show that the Al and Cr contents in the films increased continuously as the C2H2 fraction decreased. The doped Cr atoms preferred to bond with the carbon while the Al atoms mainly existed in metallic state. Structure modulation with alternate multilayer consisted of Al-poor DLC layer and Al-rich DLC layer was found in the films. Those periodic Al-rich DLC layers can effectively release the residual stress of the films. On the other hand, the formation of the carbide component due to Cr incorporation can help to increase the film hardness. Accordingly, the residual stress of the DLC films can be reduced without sacrificing the film hardness though co-doping Al and Cr atoms. Furthermore, it was found that the periodic Al-rich layer can greatly improve the elastic resilience of the DLC films and thus decreases the film friction coefficient and wear rate significantly. However, the existence of the carbide component would cause abrasive wear and thus deteriorate the wear performance of the films.

  6. Effects of hydrogen on diamond single crystal synthesized under high pressure and high temperature

    NASA Astrophysics Data System (ADS)

    Li, Yong; Jia, Xiaopeng; Song, Mousheng; Ma, Hong-An; Zhou, Zhenxiang; Fang, Chao; Wang, Fangbiao; Chen, Ning; Wang, Ying

    2015-09-01

    In this paper, diamond single crystals doped with LiH and boron additives were synthesized in Fe64Ni36-C system under high pressure and high temperature. Under the fixed pressure condition, we found that the synthesis temperature increased slightly after the addition of LiH in the synthesis system. The {100}-orientated surface morphology was investigated by scanning electron microscopy (SEM). The nitrogen concentration in the obtained diamond was analyzed and evaluated using Fourier transmission infrared spectroscopy (FTIR). Furthermore, the electrical properties of Ib-type and boron-doped diamond before and after hydrogenation using Hall effect measurement, which suggested that the conductivity of diamond co-doped with hydrogen and boron was obviously enhanced than that of boron-doped diamond.

  7. Ionization equilibrium at the transition from valence-band to acceptor-band migration of holes in boron-doped diamond

    NASA Astrophysics Data System (ADS)

    Poklonski, N. A.; Vyrko, S. A.; Poklonskaya, O. N.; Kovalev, A. I.; Zabrodskii, A. G.

    2016-06-01

    A quasi-classical model of ionization equilibrium in the p-type diamond between hydrogen-like acceptors (boron atoms which substitute carbon atoms in the crystal lattice) and holes in the valence band (v-band) is proposed. The model is applicable on the insulator side of the insulator-metal concentration phase transition (Mott transition) in p-Dia:B crystals. The densities of the spatial distributions of impurity atoms (acceptors and donors) and of holes in the crystal are considered to be Poissonian, and the fluctuations of their electrostatic potential energy are considered to be Gaussian. The model accounts for the decrease in thermal ionization energy of boron atoms with increasing concentration, as well as for electrostatic fluctuations due to the Coulomb interaction limited to two nearest point charges (impurity ions and holes). The mobility edge of holes in the v-band is assumed to be equal to the sum of the threshold energy for diffusion percolation and the exchange energy of the holes. On the basis of the virial theorem, the temperature Tj is determined, in the vicinity of which the dc band-like conductivity of holes in the v-band is approximately equal to the hopping conductivity of holes via the boron atoms. For compensation ratio (hydrogen-like donor to acceptor concentration ratio) K ≈ 0.15 and temperature Tj, the concentration of "free" holes in the v-band and their jumping (turbulent) drift mobility are calculated. Dependence of the differential energy of thermal ionization of boron atoms (at the temperature 3Tj/2) as a function of their concentration N is calculated. The estimates of the extrapolated into the temperature region close to Tj hopping drift mobility of holes hopping from the boron atoms in the charge states (0) to the boron atoms in the charge states (-1) are given. Calculations based on the model show good agreement with electrical conductivity and Hall effect measurements for p-type diamond with boron atom concentrations in the

  8. Diamond Sheet: A new diamond tool material

    NASA Technical Reports Server (NTRS)

    Mackey, C. R.

    1982-01-01

    Diamond sheet is termed a diamond tool material because it is not a cutting tool, but rather a new material from which a variety of different tools may be fabricated. In appearance and properties, it resembles a sheet of copper alloy with diamond abrasive dispersed throughout it. It is capable of being cut, formed, and joined by conventional methods, and subsequently used for cutting as a metal bonded diamond tool. Diamond sheet is normally made with industrial diamond as the abrasive material. The metal matrix in diamond sheet is a medium hard copper alloy which has performed well in most applications. This alloy has the capability of being made harder or softer if specific cutting conditions require it. Other alloys have also been used including a precipitation hardened aluminum alloy with very free cutting characteristics. The material is suitable for use in a variety of cutting, surfacing, and ring type tools, as well as in such mundane items as files and sandpaper. It can also be used as a bearing surface (diamond to diamond) and in wear resistant surfaces.

  9. Diamond detector - material science, design and application

    NASA Astrophysics Data System (ADS)

    Gaowei, Mengjia

    diamond valence-band maximum was determined by theoretically calculating the diamond density of states and applying cross section corrections. The diamond-platinum Schottky barrier height was lowered by 0.2 eV after thermal annealing, indicating annealing may increase carrier injection in diamond devices leading to photoconductive gain. In order to adapt our device to soft x-ray applications, efforts are made to develop a thin diamond position monitor for lowering device absorption. In section 5 we have discussed the fabrication and testing of thin diamond x-ray monitors made from diamond plates with nominal thickness of 30microm, which is 1/10th of the thickness of the diamonds we previously used. Calibration results of this detector are presented and discussed in comparison with thicker diamond sensors. Section 6 introduces our effort on the investigation of carrier loss mechanism in diamond detectors. Near edge responsivity in diamond x-ray detectors has been used to confirm the carrier loss mechanism as recombination due to diffusion into the incident electrode. We present a detailed study of the bias dependence of the diamond responsivity across the carbon k-edge. The carrier loss is modeled by incorporating a characteristic recombination length into the absorption model and is shown to agree well with Monte Carlo simulated carrier losses. In addition, nitrogen doped ultrananocrystalline diamond (nUNCD) grown on the surface of a CVD single crystal diamond as an alternative contact to metal is tested in the similar measurements as the metal contact diamond. nUNCD has a much lower x-ray absorption than metal contacts and is designed to improve the performance of our device. This diamond is calibrated over a wide photon energy range from 0.2 keV to 28 keV, and compared with platinum coated diamond. Results of these studies will be presented and discussed in section 7. Future work has been proposed in the last section in improving the design and fabrication of diamond

  10. Diamond heteroepitaxial lateral overgrowth

    NASA Astrophysics Data System (ADS)

    Tang, Yung-Hsiu

    This dissertation describes improvements in the growth of single crystal diamond by microwave plasma-assisted chemical vapor deposition (CVD). Heteroepitaxial (001) diamond was grown on 1 cm. 2 a-plane sapphiresubstrates using an epitaxial (001) Ir thin-film as a buffer layer. Low-energy ion bombardment of the Ir layer, a process known as bias-enhanced nucleation, is a key step in achieving a high density of diamond nuclei. Bias conditions were optimized to form uniformly-high nucleation densities across the substrates, which led to well-coalesced diamond thin films after short growth times. Epitaxial lateral overgrowth (ELO) was used as a means of decreasing diamond internal stress by impeding the propagation of threading dislocations into the growing material. Its use in diamond growth requires adaptation to the aggressive chemical and thermal environment of the hydrogen plasma in a CVD reactor. Three ELO variants were developed. The most successful utilized a gold (Au) mask prepared by vacuum evaporation onto the surface of a thin heteroepitaxial diamond layer. The Au mask pattern, a series of parallel stripes on the micrometer scale, was produced by standard lift-off photolithography. When diamond overgrows the mask, dislocations are largely confined to the substrate. Differing degrees of confinement were studied by varying the stripe geometry and orientation. Significant improvement in diamond quality was found in the overgrown regions, as evidenced by reduction of the Raman scattering linewidth. The Au layer was found to remain intact during diamond overgrowth and did not chemically bond with the diamond surface. Besides impeding the propagation of threading dislocations, it was discovered that the thermally-induced stress in the CVD diamond was significantly reduced as a result of the ductile Au layer. Cracking and delamination of the diamond from the substrate was mostly eliminated. When diamond was grown to thicknesses above 0.1 mm it was found that

  11. Diamond bio electronics.

    PubMed

    Linares, Robert; Doering, Patrick; Linares, Bryant

    2009-01-01

    The use of diamond for advanced applications has been the dream of mankind for centuries. Until recently this dream has been realized only in the use of diamond for gemstones and abrasive applications where tons of diamonds are used on an annual basis. Diamond is the material system of choice for many applications, but its use has historically been limited due to the small size, high cost, and inconsistent (and typically poor) quality of available diamond materials until recently. The recent development of high quality, single crystal diamond crystal growth via the Chemical Vapor Deposition (CVD) process has allowed physcists and increasingly scientists in the life science area to think beyond these limitations and envision how diamond may be used in advanced applications ranging from quantum computing, to power generation and molecular imaging, and eventually even diamond nano-bots. Because of diamond's unique properties as a bio-compatible material, better understanding of diamond's quantum effects and a convergence of mass production, semiconductor-like fabrication process, diamond now promises a unique and powerful key to the realization of the bio-electronic devices being envisioned for the new era of medical science. The combination of robust in-the-body diamond based sensors, coupled with smart bio-functionalized diamond devices may lead to diamond being the platform of choice for bio-electronics. This generation of diamond based bio-electronic devices would contribute substantially to ushering in a paradigm shift for medical science, leading to vastly improved patient diagnosis, decrease of drug development costs and risks, and improved effectiveness of drug delivery and gene therapy programs through better timed and more customized solutions.

  12. Diamond heteroepitaxial lateral overgrowth

    SciTech Connect

    Tang, Y. -H.; Bi, B.; Golding, B.

    2015-02-24

    A method of diamond heteroepitaxial lateral overgrowth is demonstrated which utilizes a photolithographic metal mask to pattern a thin (001) epitaxial diamond surface. Significant structural improvement was found, with a threading dislocation density reduced by two orders of magnitude at the top surface of a thick overgrown diamond layer. In the initial stage of overgrowth, a reduction of diamond Raman linewidth in the overgrown area was also realized. Thermally-induced stress and internal stress were determined by Raman spectroscopy of adhering and delaminated diamond films. As a result, the internal stress is found to decrease as sample thickness increases.

  13. Diamonds for beam instrumentation

    SciTech Connect

    Griesmayer, Erich

    2013-04-19

    Diamond is perhaps the most versatile, efficient and radiation tolerant material available for use in beam detectors with a correspondingly wide range of applications in beam instrumentation. Numerous practical applications have demonstrated and exploited the sensitivity of diamond to charged particles, photons and neutrons. In this paper, a brief description of a generic diamond detector is given and the interaction of the CVD diamond detector material with protons, electrons, photons and neutrons is presented. Latest results of the interaction of sCVD diamond with 14 MeV mono-energetic neutrons are shown.

  14. Diamond Synthesis Employing Nanoparticle Seeds

    NASA Technical Reports Server (NTRS)

    Uppireddi, Kishore (Inventor); Morell, Gerardo (Inventor); Weiner, Brad R. (Inventor)

    2014-01-01

    Iron nanoparticles were employed to induce the synthesis of diamond on molybdenum, silicon, and quartz substrates. Diamond films were grown using conventional conditions for diamond synthesis by hot filament chemical vapor deposition, except that dispersed iron oxide nanoparticles replaced the seeding. This approach to diamond induction can be combined with dip pen nanolithography for the selective deposition of diamond and diamond patterning while avoiding surface damage associated to diamond-seeding methods.

  15. The Nature of Diamonds

    NASA Astrophysics Data System (ADS)

    Harlow, George E.

    1997-10-01

    The paragon of physical perfection and a sparkling example of Earth's forces at work, the diamond has fascinated all realms of society, from starlets to scientists. The Nature of Diamonds is a comprehensive look at nature's most coveted gem. A handsome, large-format book, The Nature of Diamonds is an authoritative and richly-illustrated tribute to the diamond. Leading geologists, gemologists, physicists, and cultural observers cover every facet of the stone, from its formation in the depths of the Earth, its ascent to the surface, and its economic, regal, social, and technological roles. Cutting-edge research takes the reader to the frontiers of diamond exploration and exploitation, from the Arctic wastes to the laboratories where diamonds are created for massive road shredders that rip up and then re-create superhighways. Here also is an overview of cutting, from the rough stones in Roman rings to the highly-faceted stones we see today, and a glimpse into the business of diamonds. Finally, The Nature of Diamonds chronicles scientific and cultural history and explores the diamond as both a sacred and a social symbol, including a picture history of betrothal rings. Wide-ranging illustrations explain the geology of diamonds, chart the history of mining from its origins in India and Brazil through the diamond rush in South Africa and today's high-tech enterprises, and capture the brilliance and beauty of this extraordinary gem. _

  16. Thermally stable diamond brazing

    DOEpatents

    Radtke, Robert P.

    2009-02-10

    A cutting element and a method for forming a cutting element is described and shown. The cutting element includes a substrate, a TSP diamond layer, a metal interlayer between the substrate and the diamond layer, and a braze joint securing the diamond layer to the substrate. The thickness of the metal interlayer is determined according to a formula. The formula takes into account the thickness and modulus of elasticity of the metal interlayer and the thickness of the TSP diamond. This prevents the use of a too thin or too thick metal interlayer. A metal interlayer that is too thin is not capable of absorbing enough energy to prevent the TSP diamond from fracturing. A metal interlayer that is too thick may allow the TSP diamond to fracture by reason of bending stress. A coating may be provided between the TSP diamond layer and the metal interlayer. This coating serves as a thermal barrier and to control residual thermal stress.

  17. Diamond thin film temperature and heat-flux sensors

    NASA Technical Reports Server (NTRS)

    Aslam, M.; Yang, G. S.; Masood, A.; Fredricks, R.

    1995-01-01

    Diamond film temperature and heat-flux sensors are developed using a technology compatible with silicon integrated circuit processing. The technology involves diamond nucleation, patterning, doping, and metallization. Multi-sensor test chips were designed and fabricated to study the thermistor behavior. The minimum feature size (device width) for 1st and 2nd generation chips are 160 and 5 micron, respectively. The p-type diamond thermistors on the 1st generation test chip show temperature and response time ranges of 80-1270 K and 0.29-25 microseconds, respectively. An array of diamond thermistors, acting as heat flux sensors, was successfully fabricated on an oxidized Si rod with a diameter of 1 cm. Some problems were encountered in the patterning of the Pt/Ti ohmic contacts on the rod, due mainly to the surface roughness of the diamond film. The use of thermistors with a minimum width of 5 micron (to improve the spatial resolution of measurement) resulted in lithographic problems related to surface roughness of diamond films. We improved the mean surface roughness from 124 nm to 30 nm by using an ultra high nucleation density of 10(exp 11)/sq cm. To deposit thermistors with such small dimensions on a curved surface, a new 3-D diamond patterning technique is currently under development. This involves writing a diamond seed pattern directly on the curved surface by a computer-controlled nozzle.

  18. Fabrication of diamond based sensors for use in extreme environments

    DOE PAGES

    Samudrala, Gopi K.; Moore, Samuel L.; Vohra, Yogesh K.

    2015-04-23

    Electrical and magnetic sensors can be lithographically fabricated on top of diamond substrates and encapsulated in a protective layer of chemical vapor deposited single crystalline diamond. This process when carried out on single crystal diamond anvils employed in high pressure research is termed as designer diamond anvil fabrication. These designer diamond anvils allow researchers to study electrical and magnetic properties of materials under extreme conditions without any possibility of damaging the sensing elements. We describe a novel method for the fabrication of designer diamond anvils with the use of maskless lithography and chemical vapor deposition in this paper. This methodmore » can be utilized to produce diamond based sensors which can function in extreme environments of high pressures, high and low temperatures, corrosive and high radiation conditions. Here, we demonstrate applicability of these diamonds under extreme environments by performing electrical resistance measurements during superconducting transition in rare earth doped iron-based compounds under high pressures to 12 GPa and low temperatures to 10 K.« less

  19. Fabrication of diamond based sensors for use in extreme environments

    SciTech Connect

    Samudrala, Gopi K.; Moore, Samuel L.; Vohra, Yogesh K.

    2015-04-23

    Electrical and magnetic sensors can be lithographically fabricated on top of diamond substrates and encapsulated in a protective layer of chemical vapor deposited single crystalline diamond. This process when carried out on single crystal diamond anvils employed in high pressure research is termed as designer diamond anvil fabrication. These designer diamond anvils allow researchers to study electrical and magnetic properties of materials under extreme conditions without any possibility of damaging the sensing elements. We describe a novel method for the fabrication of designer diamond anvils with the use of maskless lithography and chemical vapor deposition in this paper. This method can be utilized to produce diamond based sensors which can function in extreme environments of high pressures, high and low temperatures, corrosive and high radiation conditions. Here, we demonstrate applicability of these diamonds under extreme environments by performing electrical resistance measurements during superconducting transition in rare earth doped iron-based compounds under high pressures to 12 GPa and low temperatures to 10 K.

  20. Enhancing the Mechanical Properties of Single-Crystal CVD Diamond

    SciTech Connect

    Liang, Q.; Yan, C; Meng, Y; Lai, J; Krasnicki, S; Mao, H; Hemley, R

    2009-01-01

    Approaches for enhancing the strength and toughness of single-crystal diamond produced by chemical vapor deposition (CVD) at high growth rates are described. CVD processes used to grow single-crystal diamond in high density plasmas were modified to incorporate boron and nitrogen. Semi-quantitative studies of mechanical properties were carried out using Vickers indentation techniques. The introduction of boron in single-crystal CVD diamond can significantly enhance the fracture toughness of this material without sacrificing its high hardness ({approx}78 GPa). Growth conditions were varied to investigate its effect on boron incorporation and optical properties by means of photoluminescence, infrared, and ultraviolet-visible absorption spectroscopy. Boron can be readily incorporated into single-crystal diamond by the methods used, but with nitrogen addition, the incorporation of boron was hindered. The spectroscopic measurements indicate that nitrogen and boron coexist in the diamond structure, which helps explain the origin of the enhanced fracture toughness of this material. Further, low pressure/high temperature annealing can enhance the intrinsic hardness of single-crystal CVD diamond by a factor of two without appreciable loss in fracture toughness. This doping and post-growth treatment of diamond may lead to new technological applications that require enhanced mechanical properties of diamond.

  1. Modeling of Disordered Binary Alloys Under Thermal Forcing: Effect of Nanocrystallite Dissociation on Thermal Expansion of AuCu3

    NASA Astrophysics Data System (ADS)

    Kim, Y. W.; Cress, R. P.

    2016-11-01

    Disordered binary alloys are modeled as a randomly close-packed assembly of nanocrystallites intermixed with randomly positioned atoms, i.e., glassy-state matter. The nanocrystallite size distribution is measured in a simulated macroscopic medium in two dimensions. We have also defined, and measured, the degree of crystallinity as the probability of a particle being a member of nanocrystallites. Both the distribution function and the degree of crystallinity are found to be determined by alloy composition. When heated, the nanocrystallites become smaller in size due to increasing thermal fluctuation. We have modeled this phenomenon as a case of thermal dissociation by means of the law of mass action. The crystallite size distribution function is computed for AuCu3 as a function of temperature by solving some 12 000 coupled algebraic equations for the alloy. The results show that linear thermal expansion of the specimen has contributions from the temperature dependence of the degree of crystallinity, in addition to respective thermal expansions of the nanocrystallites and glassy-state matter.

  2. Nano-inclusions in diamond: Evidence of diamond genesis

    NASA Astrophysics Data System (ADS)

    Wirth, R.

    2015-12-01

    The use of Focused Ion Beam technology (FIB) for TEM sample preparation introduced approximately 15 years ago revolutionized the application of TEM in Geosciences. For the first time, FIB enabled cutting samples for TEM use from exactly the location we are interested in. Applied to diamond investigation, this technique revealed the presence of nanometre-sized inclusions in diamond that have been simply unknown before. Nanoinclusions in diamond from different location and origin such as diamonds from the Lower and Upper Mantle, metamorphic diamonds (Kazakhstan, Erzgebirge, Bohemia), diamonds from ophiolites (Tibet, Mongolia, Xinjiang, Ural Mountains), diamonds from igneous rocks (Hawaii, Kamchatka) and impact diamonds (Popigai Crater, Siberia) have been investigated during the last 15 years. The major conclusion of all these TEM studies is, that the nanoinclusions, their phases and phase composition together with the micro- and nanostructure evidence the origin of diamond and genesis of diamond. We can discriminate Five different mechanisms of diamond genesis in nature are observed: Diamond crystallized from a high-density fluid (Upper mantle and metamorphic diamond). Diamond crystallized from carbonatitic melt (Lower mantle diamond). Diamond precipitates from a metal alloy melt (Diamond from ophiolites). Diamond crystallized by gas phase condensation or chemical vapour condensation (CVD) (Lavas from Kamchatka, xenoliths in Hawaiian lavas). Direct transformation of graphite into diamond.

  3. Diamond tool machining of materials which react with diamond

    DOEpatents

    Lundin, Ralph L.; Stewart, Delbert D.; Evans, Christopher J.

    1992-01-01

    Apparatus for the diamond machining of materials which detrimentally react with diamond cutting tools in which the cutting tool and the workpiece are chilled to very low temperatures. This chilling halts or retards the chemical reaction between the workpiece and the diamond cutting tool so that wear rates of the diamond tool on previously detrimental materials are comparable with the diamond turning of materials which do not react with diamond.

  4. Diamond tool machining of materials which react with diamond

    DOEpatents

    Lundin, R.L.; Stewart, D.D.; Evans, C.J.

    1992-04-14

    An apparatus is described for the diamond machining of materials which detrimentally react with diamond cutting tools in which the cutting tool and the workpiece are chilled to very low temperatures. This chilling halts or retards the chemical reaction between the workpiece and the diamond cutting tool so that wear rates of the diamond tool on previously detrimental materials are comparable with the diamond turning of materials which do not react with diamond. 1 figs.

  5. Two-photon absorption of Tl1-xIn1-xSnxSe2 nanocrystallites

    NASA Astrophysics Data System (ADS)

    Myronchuk, Galyna; Parasyuk, Oleg; Piskach, Ludmila; Alzayed, Nasser Saleh; Prokhorenko, Serhii; Piasecki, Michal; Kityk, Iwan

    2016-12-01

    Novel materials for the infrared two-photon absorption — Tl1-xIn1-xSnxSe2 single crystals (x = 0.1,0.2) were grown. Two-photon absorption (TPA) was studied at CO2 laser wave-length 9.4μm with pulse duration 1μs. The studies were performed at different temperatures and for the nanocrystallite sizes varying within the 7-200 nm. The studies have shown that the TPA may be enhanced during the decrease of the nanocrystallite sizes below 50-60 nm. There exists also some critical x value at which the TPA value begin substantially to increase. The studied nanocrystallites are relatively stable to the infrared laser treatment and are not hygroscopic which allow to use them in different IR optoelectronic devices.

  6. Nanocrystallite Mg ferrite LPG, Cl2 and C2H5OH sensor

    NASA Astrophysics Data System (ADS)

    Gadkari, Ashok B.; Shinde, Tukaram J.; Vasambekar, Pramod N.

    2012-06-01

    The magnesium ferrite was synthesized by oxalate co-precipitation method. The crystal structure and surface morphology were examined by X-ray diffraction and SEM respectively. The nanocrystallite MgFe2O4 sensor was tested for gases like LPG, Cl2 and C2H5OH. Sensitivity was measured at various operating temperatures between 100-400°C. The sensor shows highest sensitivity to LPG at 225°C. The response and recovery time was measured at operating temperature of 225°C. The sensor exhibits a good response and recovery for LPG at operating temperature.

  7. Heteroepitaxial Diamond Growth

    DTIC Science & Technology

    1992-11-01

    methyl radicals to a nickel (111) surface . The detailed results are contained in an attached copy of a recently published journal article, "Effects of...nucleation on surfaces which otherwise would not even nucleate diamond. The second area of research is devoted to the development of implant and...in explaining results of hydrogen dosing of diamond surfaces . Experimental results indicated that the dimmer bond on the diamond 2x1 surface was very

  8. Diamond Smoothing Tools

    NASA Technical Reports Server (NTRS)

    Voronov, Oleg

    2007-01-01

    Diamond smoothing tools have been proposed for use in conjunction with diamond cutting tools that are used in many finish-machining operations. Diamond machining (including finishing) is often used, for example, in fabrication of precise metal mirrors. A diamond smoothing tool according to the proposal would have a smooth spherical surface. For a given finish machining operation, the smoothing tool would be mounted next to the cutting tool. The smoothing tool would slide on the machined surface left behind by the cutting tool, plastically deforming the surface material and thereby reducing the roughness of the surface, closing microcracks and otherwise generally reducing or eliminating microscopic surface and subsurface defects, and increasing the microhardness of the surface layer. It has been estimated that if smoothing tools of this type were used in conjunction with cutting tools on sufficiently precise lathes, it would be possible to reduce the roughness of machined surfaces to as little as 3 nm. A tool according to the proposal would consist of a smoothing insert in a metal holder. The smoothing insert would be made from a diamond/metal functionally graded composite rod preform, which, in turn, would be made by sintering together a bulk single-crystal or polycrystalline diamond, a diamond powder, and a metallic alloy at high pressure. To form the spherical smoothing tip, the diamond end of the preform would be subjected to flat grinding, conical grinding, spherical grinding using diamond wheels, and finally spherical polishing and/or buffing using diamond powders. If the diamond were a single crystal, then it would be crystallographically oriented, relative to the machining motion, to minimize its wear and maximize its hardness. Spherically polished diamonds could also be useful for purposes other than smoothing in finish machining: They would likely also be suitable for use as heat-resistant, wear-resistant, unlubricated sliding-fit bearing inserts.

  9. Plasma and ion beam enhanced chemical vapour deposition of diamond and diamond-like carbon

    NASA Astrophysics Data System (ADS)

    Tang, Yongji

    WC-Co cutting tools are widely used in the machining industry. The application of diamond coatings on the surfaces of the tools would prolong the cutting lifetime and improves the manufacturing efficiency. However, direct chemical vapor deposition (CVD) of diamond coatings on WC-Co suffer from severe premature adhesion failure due to interfacial graphitization induced by the binder phase Co. In this research, a combination of hydrochloric acid (HCl) and hydrogen (H2) plasma pretreatments and a novel double interlayer of carbide forming element (CFE)/Al were developed to enhance diamond nucleation and adhesion. The results showed that both the pretreatments and interlayers were effective in forming continuous and adhesive nanocrystalline diamond coatings. The method is a promising replacement of the hazardous Murakami's regent currently used in WC-Co pretreatment with a more environmental friendly approach. Apart from coatings, diamond can be fabricated into other forms of nanostructures, such as nanotips. In this work, it was demonstrated that oriented diamond nanotip arrays can be fabricated by ion beam etching of as-grown CVD diamond. The orientation of diamond nanotips can be controlled by adjusting the direction of incident ion beam. This method overcomes the limits of other techniques in producing nanotip arrays on large areas with controlled orientation. Oriented diamond nano-tip arrays have been used to produce anisotropic frictional surface, which is successfully used in ultra-precision positioning systems. Diamond-like carbon (DLC) has many properties comparable to diamond. In this thesis, the preparation of alpha-C:H thin films by end-Hall (EH) ion source and the effects of ion energy and nitrogen doping on the microstructure and mechanical properties of the as-deposited thin films were investigated. The results have demonstrated that smooth and uniform alpha-C:H and alpha-C:H:N films with large area and reasonably high hardness and Young's modulus can be

  10. Diamond anvil technology

    NASA Astrophysics Data System (ADS)

    Seal, Michael

    This paper is largely a review of the techniques used in making diamond anvils and the constraints these put on the shapes of anvil. Techniques available for shaping diamonds include cleaving, sawing, polishing, laser cutting, and bruting. At present the shapes most commonly used for anvils are a modification of the brilliant cut derived from the gem industry, and a design based on an octagonal prism with truncated pyramidal top and base, known as the "Drukker standard design". Diamond orientation and material selection are considered as are future possibilities for the attainment of still higher pressures through modifications of the diamond anvil material or design.

  11. Hybrid Group IV Nanophotonic Structures Incorporating Diamond Silicon-Vacancy Color Centers

    NASA Astrophysics Data System (ADS)

    Zhang, Jingyuan Linda; Ishiwata, Hitoshi; Babinec, Thomas M.; Radulaski, Marina; Müller, Kai; Lagoudakis, Konstantinos G.; Dory, Constantin; Dahl, Jeremy; Edgington, Robert; Soulière, Veronique; Ferro, Gabriel; Fokin, Andrey A.; Schreiner, Peter R.; Shen, Zhi-Xun; Melosh, Nicholas A.; Vučković, Jelena

    2016-01-01

    We demonstrate a new approach for engineering group IV semiconductor-based quantum photonic structures containing negatively charged silicon-vacancy (SiV$^-$) color centers in diamond as quantum emitters. Hybrid SiC/diamond structures are realized by combining the growth of nanoand micro-diamonds on silicon carbide (3C or 4H polytype) substrates, with the subsequent use of these diamond crystals as a hard mask for pattern transfer. SiV$^-$ color centers are incorporated in diamond during its synthesis from molecular diamond seeds (diamondoids), with no need for ionimplantation or annealing. We show that the same growth technique can be used to grow a diamond layer controllably doped with SiV$^-$ on top of a high purity bulk diamond, in which we subsequently fabricate nanopillar arrays containing high quality SiV$^-$ centers. Scanning confocal photoluminescence measurements reveal optically active SiV$^-$ lines both at room temperature and low temperature (5 K) from all fabricated structures, and, in particular, very narrow linewidths and small inhomogeneous broadening of SiV$^-$ lines from all-diamond nano-pillar arrays, which is a critical requirement for quantum computation. At low temperatures (5 K) we observe in these structures the signature typical of SiV$^-$ centers in bulk diamond, consistent with a double lambda. These results indicate that high quality color centers can be incorporated into nanophotonic structures synthetically with properties equivalent to those in bulk diamond, thereby opening opportunities for applications in classical and quantum information processing.

  12. Effect of hydrogen defects on nanocrystallite layers of Si solar cells by hydrogen implantation

    NASA Astrophysics Data System (ADS)

    Palei, Srikanta; Lim, Gyoungho; Parida, Bhaskar; Choi, Jaeho; Kim, Keunjoo

    2015-11-01

    The Si solar cells were irradiated with high energy hydrogen ions of 10, 30, 60 and 120 keV at the dose rate of 1017 H+ ions (proton)/cm2. The structural, optical and electrical properties of the implanted samples and fabricated cells were studied. The implantation induced defects bringing structural changes before and after annealing was evidenced by the transmission electron microscopy. The Raman spectrum showed a change of crystalline to amorphous state at 480 cm-1 when the sample was implanted by hydrogen ion of 30 keV energy. Formation of nanocrystallite layers were observed after annealing. The electroluminescence images showed that hydrogen-related defect centers were involved in the emission mechanism. The photoluminescence emission from the implanted cells was attributed to nanocrystallite layers. From current-voltage measurements, the conversion efficiencies of implanted Si solar cells were found lower than the un-implanted reference cell. The ion implantation did not passivate the defects rather acted as recombination centers.

  13. Metallic nanocrystallites-incorporated ordered mesoporous carbon as labels for a sensitive simultaneous multianalyte electrochemical immunoassay.

    PubMed

    Fang, Yishan; Huang, Xinjian; Zeng, Qiang; Wang, Lishi

    2015-11-15

    This work reports on a facile, novel multianalyte electrochemical immunoassay for simultaneous detection of a-fetoprotein (AFP) and human epidermal growth factor receptor type-2 (HER-2) using metal-containing nanomaterials confined in the ordered mesoporous carbon matrix (OMC-M) as labels. Well-dispersed uniform metallic nanocrystallites incorporated OMC materials were fabricated through a simple, economical, and green preparative strategy toward phenolic resol as a carbon source and metal nitrate as metal sources. The large amount of metallic nanocrystallites loading on the OMC nanomaterials, greatly amplified the detection signals, and the good biocompatibility of carbon nanotubes-chitosan retained excellent stability for the sandwich-type immunoassay. Under optimal experimental conditions, the proposed immunoassay exhibited high sensitivity and selectivity for the detection of analytes, providing a better linear response range from 0.001 to 150 ng/mL for AFP and for HER-2, with a lower limit of detectionof 0.6p g/mL and 0.35 pg/mL (S/N=3), respectively. The immunosensor exhibited convenience, low cost, rapidity, good specificity, acceptable stability and reproducibility. Moreover, satisfactory results were obtained for the determination of AFP and HER-2 in real human serum samples, indicating that the developed immunoassay has the potential to find application in clinical detection of AFP and HER-2 and other tumor markers as an alternative approach.

  14. Interface driven magnetic interactions in nanostructured thin films of iron nanocrystallites embedded in a copper matrix

    SciTech Connect

    Desautels, R. D. Lierop, J. van; Shueh, C.; Lin, K.-W.; Freeland, J. W.

    2015-05-07

    We have fabricated thin films of iron nanocrystallites embedded in a copper matrix using a dual ion beam assisted deposition technique. A secondary End-Hall ion beam bombarded the iron atoms during deposition altering significantly the morphology of the films and allowing for control of the intermixing between iron and copper components. Cross-sectional transmission electron microscopy and x-ray reflectometry experiments indicated that the morphology of the films was that of iron nanocrystallites embedded in a copper matrix. Rietveld refinements of the diffraction pattern identified fcc-copper and amorphous iron. An increased amount of disorder was observed with a reduction in the amount of deposited iron from a 1:1 Fe:Cu ratio to 0.25:0.75 Fe:Cu ratio. Interfacial copper-iron alloys were identified by DC susceptibility experiments through their reduced T{sub C,Alloy} (370, 310, and 280 K) compared with that of bulk iron (∼1000 K). Element specific x-ray absorption and x-ray magnetic circular dichroism experiments were performed to identify the contributions to the magnetism from the iron and the copper-iron alloy.

  15. Diamond nucleation using polyethene

    SciTech Connect

    Morell, Gerardo; Makarov, Vladimir; Varshney, Deepak; Weiner, Brad

    2013-07-23

    The invention presents a simple, non-destructive and non-abrasive method of diamond nucleation using polyethene. It particularly describes the nucleation of diamond on an electrically viable substrate surface using polyethene via chemical vapor deposition (CVD) technique in a gaseous environment.

  16. Diamond Nucleation Using Polyethene

    NASA Technical Reports Server (NTRS)

    Morell, Gerardo (Inventor); Makarov, Vladimir (Inventor); Varshney, Deepak (Inventor); Weiner, Brad (Inventor)

    2013-01-01

    The invention presents a simple, non-destructive and non-abrasive method of diamond nucleation using polyethene. It particularly describes the nucleation of diamond on an electrically viable substrate surface using polyethene via chemical vapor deposition (CVD) technique in a gaseous environment.

  17. Diamond films: Historical perspective

    SciTech Connect

    Messier, R.

    1993-01-01

    This section is a compilation of notes and published international articles about the development of methods of depositing diamond films. Vapor deposition articles are included from American, Russian, and Japanese publications. The international competition to develop new deposition methodologies is stressed. The current status of chemical vapor deposition of diamond is assessed.

  18. Polycrystalline-Diamond MEMS Biosensors Including Neural Microelectrode-Arrays.

    PubMed

    Varney, Michael W; Aslam, Dean M; Janoudi, Abed; Chan, Ho-Yin; Wang, Donna H

    2011-08-15

    Diamond is a material of interest due to its unique combination of properties, including its chemical inertness and biocompatibility. Polycrystalline diamond (poly-C) has been used in experimental biosensors that utilize electrochemical methods and antigen-antibody binding for the detection of biological molecules. Boron-doped poly-C electrodes have been found to be very advantageous for electrochemical applications due to their large potential window, low background current and noise, and low detection limits (as low as 500 fM). The biocompatibility of poly-C is found to be comparable, or superior to, other materials commonly used for implants, such as titanium and 316 stainless steel. We have developed a diamond-based, neural microelectrode-array (MEA), due to the desirability of poly-C as a biosensor. These diamond probes have been used for in vivo electrical recording and in vitro electrochemical detection. Poly-C electrodes have been used for electrical recording of neural activity. In vitro studies indicate that the diamond probe can detect norepinephrine at a 5 nM level. We propose a combination of diamond micro-machining and surface functionalization for manufacturing diamond pathogen-microsensors.

  19. Polycrystalline-Diamond MEMS Biosensors Including Neural Microelectrode-Arrays

    PubMed Central

    Varney, Michael W.; Aslam, Dean M.; Janoudi, Abed; Chan, Ho-Yin; Wang, Donna H.

    2011-01-01

    Diamond is a material of interest due to its unique combination of properties, including its chemical inertness and biocompatibility. Polycrystalline diamond (poly-C) has been used in experimental biosensors that utilize electrochemical methods and antigen-antibody binding for the detection of biological molecules. Boron-doped poly-C electrodes have been found to be very advantageous for electrochemical applications due to their large potential window, low background current and noise, and low detection limits (as low as 500 fM). The biocompatibility of poly-C is found to be comparable, or superior to, other materials commonly used for implants, such as titanium and 316 stainless steel. We have developed a diamond-based, neural microelectrode-array (MEA), due to the desirability of poly-C as a biosensor. These diamond probes have been used for in vivo electrical recording and in vitro electrochemical detection. Poly-C electrodes have been used for electrical recording of neural activity. In vitro studies indicate that the diamond probe can detect norepinephrine at a 5 nM level. We propose a combination of diamond micro-machining and surface functionalization for manufacturing diamond pathogen-microsensors. PMID:25586924

  20. The use of thin diamond films in fiber-optic low-coherence interferometers

    NASA Astrophysics Data System (ADS)

    Milewska, D.; Karpienko, K.

    2016-01-01

    In this paper we present the use of thin diamond films in fiber-optic low-coherence interferometers. Two kinds of diamond surfaces were used: undoped diamond film and boron- doped diamond film. They were deposited on glass plates as well as silicon layers. A conventionally used mirror was used as a reference layer. Diamond films were deposited using Microwave Plasma Enhanced Chemical Vapour Deposition (μPE CVD) system. Measurements were performed using two superluminescent diodes (SLD) with wavelengths of 1300 mm and 1550 mm. The optimal conditions for each layers were examined: the required wavelength of the light source and the length of Fabry-Perot interferometer cavity. Metrological parameters of Fabry-Perot interferometer with different mirrors were compared. The presented thin diamond films may be an interesting alternative to the commonly used reflective surfaces.

  1. Synthesis and characterization of magnesium oxide nanocrystallites and probing the vacancy-type defects through positron annihilation studies

    NASA Astrophysics Data System (ADS)

    Das, Anjan; Mandal, Atis Chandra; Roy, Soma; Prashanth, Pendem; Ahamed, Sk Izaz; Kar, Subhrasmita; Prasad, Mithun S.; Nambissan, P. M. G.

    2016-09-01

    Magnesium oxide nanocrystallites exhibit certain abnormal characteristics when compared to those of other wide band gap oxide semiconductors in the sense they are most prone to water absorption and formation of a hydroxide layer on the surface. The problem can be rectified by heating and pure nanocrystallites can be synthesized with controllable sizes. Inevitably the defect properties are distinctly divided between two stages, the one with the hydroxide layer (region I) and the other after the removal of the layer by annealing (region II). The lattice parameters, the optical band gap and even the positron annihilation characteristics are conspicuous by their distinct behavior in the two stages of the surface configurations of nanoparticles. While region I was specific with the formation of positronium-hydrogen complexes that drastically altered the defect-specific positron lifetimes, pick-off annihilation of orthopositronium atoms marked region II. The vacancy clusters within the nanocrystallites also trapped positrons. They agglomerated due to the effect of the higher temperatures and resulted in the growth of the nanocrystallites. The coincidence Doppler broadening spectroscopic measurements supported these findings and all the more indicated the trapping of positrons additionally into the neutral divacancies and negatively charged trivacancies. This is apart from the Mg2+ monovacancies which acted as the dominant trapping centers for positrons.

  2. Synthesis of zinc tin oxide (ZTO) nanocrystallites at room temperature through association with peptide-containing bolaamphiphile molecules.

    PubMed

    Ahn, Sungjun; Kwon, Tae-Geun; Lee, Sang-Yup

    2011-10-15

    Single crystalline zinc tin oxide (ZTO) nanocrystallites were prepared at room temperature through association with a peptide-containing bolaamphiphile molecule. The bolaamphiphile molecules self-assembled to form spherical structures with creation of ZTO nanocrystallites inside. ZTO nanocrystallite synthesis was achieved only when the bolaamphiphile molecule was present, while a mixture of amorphous Sn and Zn precipitates was formed in the absence of the bolaamphiphile molecule. The bolaamphiphile molecule is thought to stabilize the Zn(2+) and Sn(4+) precursor ions by ligation and to induce subsequent condensation forming crystalline ZTO. The ZTO formation was achieved only at a strong acidic condition that promotes dissociation and ionization of Zn and Sn precursors and represses formation of ZnO and H(2)SnO(3). The prepared ZTO nanocrystallites had almost the same band gap energy as ZTO nanoparticles prepared by the conventional hydrothermal process. The outcomes of this study indicate that the controlled mineralization of metal precursor ions in a peptide-containing bolaamphiphile molecule suspension can be an alternative method to synthesize metal oxides at room temperature, while maintaining their crystalline structure and optoelectrical properties.

  3. Enhancement of the Si p-n diode NIR photoresponse by embedding β-FeSi2 nanocrystallites.

    PubMed

    Shevlyagin, A V; Goroshko, D L; Chusovitin, E A; Galkin, K N; Galkin, N G; Gutakovskii, A K

    2015-10-05

    By using solid phase epitaxy of thin Fe films and molecular beam epitaxy of Si, a p(+)-Si/p-Si/β-FeSi2 nanocrystallites/n-Si(111) diode structure was fabricated. Transmission electron microscopy data confirmed a well-defined multilayered structure with embedded nanocrystallites of two typical sizes: 3-4 and 15-20 nm, and almost coherent epitaxy of the nanocrystallites with the Si matrix. The diode at zero bias conditions exhibited a current responsivity of 1.7 mA/W, an external quantum efficiency of about 0.2%, and a specific detectivity of 1.2 × 10(9) cm × Hz(1/2)/W at a wavelength of 1300 nm at room temperature. In the avalanche mode, the responsivity reached up to 20 mA/W (2% in terms of efficiency) with a value of avalanche gain equal to 5. The data obtained indicate that embedding of β-FeSi2 nanocrystallites into the depletion region of the Si p-n junction results in expansion of the spectral sensitivity up to 1600 nm and an increase of the photoresponse by more than two orders of magnitude in comparison with a conventional Si p-n junction. Thereby, fabricated structure combines advantage of the silicon photodiode functionality and simplicity with near infrared light detection capability of β-FeSi2.

  4. Enhancement of the Si p-n diode NIR photoresponse by embedding β-FeSi2 nanocrystallites

    NASA Astrophysics Data System (ADS)

    Shevlyagin, A. V.; Goroshko, D. L.; Chusovitin, E. A.; Galkin, K. N.; Galkin, N. G.; Gutakovskii, A. K.

    2015-10-01

    By using solid phase epitaxy of thin Fe films and molecular beam epitaxy of Si, a p+-Si/p-Si/β-FeSi2 nanocrystallites/n-Si(111) diode structure was fabricated. Transmission electron microscopy data confirmed a well-defined multilayered structure with embedded nanocrystallites of two typical sizes: 3-4 and 15-20 nm, and almost coherent epitaxy of the nanocrystallites with the Si matrix. The diode at zero bias conditions exhibited a current responsivity of 1.7 mA/W, an external quantum efficiency of about 0.2%, and a specific detectivity of 1.2 × 109 cm × Hz1/2/W at a wavelength of 1300 nm at room temperature. In the avalanche mode, the responsivity reached up to 20 mA/W (2% in terms of efficiency) with a value of avalanche gain equal to 5. The data obtained indicate that embedding of β-FeSi2 nanocrystallites into the depletion region of the Si p-n junction results in expansion of the spectral sensitivity up to 1600 nm and an increase of the photoresponse by more than two orders of magnitude in comparison with a conventional Si p-n junction. Thereby, fabricated structure combines advantage of the silicon photodiode functionality and simplicity with near infrared light detection capability of β-FeSi2.

  5. Precise size control over ultrafine rutile titania nanocrystallites in hierarchical nanotubular silica/titania hybrids with efficient photocatalytic activity.

    PubMed

    Gu, Yuanqing; Huang, Jianguo

    2013-08-12

    Hierarchical-structured nanotubular silica/titania hybrids incorporated with particle-size-controllable ultrafine rutile titania nanocrystallites were realized by deposition of ultrathin titania sandwiched silica gel films onto each nanofiber of natural cellulose substances (e.g., common commercial filter paper) and subsequent flame burning in air. The rapid flame burning transforms the initially amorphous titania into rutile phase titania, and the silica gel films suppress the crystallite growth of rutile titania, thereby achieving nano-precise size regulation of ultrafine rutile titania nanocrystallites densely embedded in the silica films of the nanotubes. The average diameters of these nanocrystallites are adjustable in a range of approximately 3.3-16.0 nm by a crystallite size increment rate of about 2.4 nm per titania deposition cycle. The silica films transfer the electrons activated by crystalline titania and generate catalytic reactive species at the outer surface. The size-tuned ultrafine rutile titania nanocrystallites distributed in the unique hierarchical networks significantly improve the photocatalytic performance of the rutile phase titania, thereby enabling a highly efficient photocatalytic degradation of the methylene blue dye under ultraviolet light irradiation, which is even superior to the pure anatase-titania-based materials. The facile stepwise size control of the rutile titania crystallites described here opens an effective pathway for the design and preparation of fine-nanostructured rutile phase titania materials to explore potential applications.

  6. PREFACE: Science's gem: diamond science 2009 Science's gem: diamond science 2009

    NASA Astrophysics Data System (ADS)

    Mainwood, Alison; Newton, Mark E.; Stoneham, Marshall

    2009-09-01

    diamond's exceptional properties for quantum information processing [2], a topic on which there have been many recent papers, and where a diamond colour centre single photon source is already commercially available. Biomedical applications of diamond are recognised, partly tribological and partly electrochemical, but lie outside the present group of papers. Processing and controlling diamond surfaces and interfaces with other materials in their environment are critical steps en route to exploitation. Boron-doped diamond has already found application in electro-analysis and in the bulk oxidation of dissolved species in solution [3]. Energy-related applications—ranging from high-power electronics [3] to a potential first wall of fusion reactors [4]—are further exciting potential applications. Even small and ugly diamonds have value. Their mechanical properties [5] dominate, with significant niche applications such as thermal sinks. The major applications for diamond to date exploit only a fraction of diamond's special properties: visual for status diamonds, and mechanical for working diamonds. Diamond physics reaches well beyond the usual laboratory, to the geological diamond formation processes in the Earth's mantle. Characterization of natural gem diamonds [6, 7] is one part of the detective story that allows us to understand the conditions under which they formed. It was only half a century ago that the scientific and technological challenges of diamond synthesis were met systematically. Today, most of the recent research on diamond has concentrated on synthetics, whether created using high pressure, high temperature (HPHT) techniques or chemical vapour deposition (CVD). The HPHT synthesis of diamond has advanced dramatically [8, 9] to the extent that dislocation birefringence [10] can be largely eliminated. In silicon technology, the elimination of dislocations was a major step in microelectronics. Now, even diamond can be synthesised containing virtually no

  7. Very High Efficiency, Miniaturized, Long-Lived Alpha Particle Power Source Using Diamond Devices for Extreme Space Environments

    NASA Technical Reports Server (NTRS)

    Kolawa, Elizabeth A. (Inventor); Patel, Jagdishbhai U. (Inventor); Fleurial, Jean-Pierre (Inventor)

    2004-01-01

    A power source that converts a-particle energy into electricity by coulomb collision in doped diamond films is described. Alpha particle decay from curium-244 creates electron-hole pairs by free- ing electrons and holes inside the crystal lattice in N- and P-doped diamond films. Ohmic contacts provide electrical connection to an electronic device. Due to the built-in electric field at the rectifying junction across the hT- and P-doped diamond films, the free electrons are constrained to traveling in generally one direction. This one direction then supplies electrons in a manner similar to that of a battery. The radioactive curium layer may be disposed on diamond films for even distribution of a-particle radiation. The resulting power source may be mounted on a diamond substrate that serves to insulate structures below the diamond substrate from a-particle emission. Additional insulation or isolation may be provided in order to prevent damage from a-particle collision. N-doped silicon may be used instead of N-doped diamond.

  8. Diamond and Carbon Nanotube Composites for Supercapacitor Devices

    NASA Astrophysics Data System (ADS)

    Moreira, João Vitor Silva; May, Paul William; Corat, Evaldo José; Peterlevitz, Alfredo Carlos; Pinheiro, Romário Araújo; Zanin, Hudson

    2017-02-01

    We report on the synthesis and electrochemical properties of diamond grown onto vertically aligned carbon nanotubes with high surface areas as a template, resulting in a composite material exhibiting high double-layer capacitance as well as low electrochemical impedance electrodes suitable for applications as supercapacitor devices. We contrast results from devices fabricated with samples which differ in both their initial substrates (Si and Ti) and their final diamond coatings, such as boron-doped diamond and diamond-like carbon (DLC). We present for first time a conducting model for non-doped DLC thin-films. All samples were characterized by scanning and transmission electron microscopy and Fourier transform infrared and Raman spectroscopy. Our results show specific capacitance as high as 8.25 F g-1 (˜1 F cm-2) and gravimetric specific energy and power as high as 0.7 W h kg-1 and 176.4 W kg-1, respectively, which suggest that these diamond/carbon nanotube composite electrodes are excellent candidates for supercapacitor fabrication.

  9. Fundamental reactions in TiO 2 nanocrystallite aqueous solutions studied by pulse radiolysis

    NASA Astrophysics Data System (ADS)

    Gao, Ruomei; Safrany, Agnes; Rabani, Joseph

    2002-12-01

    Reactions of the hydrated electron, H atoms, 2-propanol, and methanol radicals with the TiO 2 nano-particles have been studied either directly or by competition kinetics. The radicals were produced by radiolysis of 2-propanol, t-butanol, or methanol aqueous solutions in acid pH's. The reactions involve electron injection to the conduction band. As expected, the t-butanol radical is inert towards TiO 2 under our conditions, while the other reducing radicals react with TiO 2. The reactivity decreases in the order: e aq->H>CH 3COHCH 3>CH 2OH. Two TiO 2 nanocrystallite sizes, with average diameters of 1.0 and 4.7 nm were compared. For equal concentrations (in terms of TiO 2 molecules), the rate of electron injection shows relatively little dependency on particle size. The rates of interfacial electron transfer and transfer coefficient are also reported.

  10. Low-temperature synthesis of metal tungstates nanocrystallites in ethylene glycol

    SciTech Connect

    Chen Di; Shen Guozhen; Tang Kaibin; Zheng Huagui; Qian Yitai

    2003-11-26

    In this paper, we report the low-temperature synthesis of metal tungstate, MWO{sub 4} (M=Ca, Sr, Ba, Cd, Zn, Pb) nanocrystallites. By reaction between metal chloride and sodium tungstate in ethylene glycol at 180 deg. C for 10 h, well-crystallized tungstate particles were successfully obtained. Characterization by X-ray powder diffraction (XRD) and transmission electron microscopy (TEM) shows that the product powders consist of nanosize particles. Photoluminescence measurement reveals that the as-obtained CaWO{sub 4}, CdWO{sub 4}, and PbWO{sub 4} show excitonic peaks at about 430, 500 and 500 nm, respectively. The solvent and reaction conditions are important in the formation of the products.

  11. Cytotoxicity Induced by Engineered Silver Nanocrystallites is Dependent on Surface Coatings and Cell Types

    SciTech Connect

    Suresh, Anil K; Pelletier, Dale A; Wang, Wei; Morrell-Falvey, Jennifer L; Doktycz, Mitchel John

    2012-01-01

    Due to their unique antimicrobial properties silver nanocrystallites have garnered substantial recognition and are used extensively in biomedical applications such as wound dressing, surgical instruments and as bone substitute material. They are also released into unintended locations such as the environment or biosphere. Therefore it is imperative to understand the potential interactions, fate and transport of nanoparticles with environmental biotic systems. Although numerous factors including the composition, size, shape, surface charge and capping molecule of nanoparticles are known to influence the cell cytotoxicity, our results demonstrate for the first time that surface coatings are a major determinant in eliciting the potential cytotoxicity and cell interactions of silver nanoparticles. In the present investigation, silver nanocrystallites with nearly uniform size and shape distribution but with different surface coatings, imparting overall high negativity to high positivity, were synthesized. These nanoparticles were poly (diallyldimethylammonium) chloride-Ag, biogenic-Ag, colloidal-Ag (uncoated) and oleate-Ag with zeta potentials +45 5 mV, -12 2 mV, -42 5 mV and -45 5 mV respectively; the particles were thoroughly purified so as to avoid false cytotoxicity interpretations. A systematic investigation on the cytotoxic effects, cellular response and membrane damage caused by these four different silver nanoparticles were evaluated using multiple toxicity measurements on mouse macrophage (RAW-264.7) and lung epithelial (C-10) cell lines. From a toxicity perspective, our results clearly indicated that the cytotoxicity was depend on various factors such as synthesis procedure, surface coat or surface charge and the cell-type for the different silver nanoparticles that were investigated. Poly (diallyldimethylammonium) chloride -Ag was found to be the most toxic, followed by biogenic-Ag and oleate-Ag, whereas uncoated-Ag was found to be least toxic to both

  12. PROCESS FOR COLORING DIAMONDS

    DOEpatents

    Dugdale, R.A.

    1960-07-19

    A process is given for coloring substantially colorless diamonds in the blue to blue-green range and comprises the steps of irradiating the colorless diamonds with electrons having an energy within the range 0.5 to 2 Mev to obtain an integrated electron flux of between 1 and 2 x 10/sup 18/ thc diamonds may be irradiated 1 hr when they take on a blue color with a slight green tint: After being heated at about 500 deg C for half an hour they become pure blue. Electrons within this energy range contam sufficient energy to displace the diamond atoms from their normal lattice sites into interstitial sites, thereby causing the color changes.

  13. Fabrication of diamond shells

    SciTech Connect

    Hamza, Alex V.; Biener, Juergen; Wild, Christoph; Woerner, Eckhard

    2016-11-01

    A novel method for fabricating diamond shells is introduced. The fabrication of such shells is a multi-step process, which involves diamond chemical vapor deposition on predetermined mandrels followed by polishing, microfabrication of holes, and removal of the mandrel by an etch process. The resultant shells of the present invention can be configured with a surface roughness at the nanometer level (e.g., on the order of down to about 10 nm RMS) on a mm length scale, and exhibit excellent hardness/strength, and good transparency in the both the infra-red and visible. Specifically, a novel process is disclosed herein, which allows coating of spherical substrates with optical-quality diamond films or nanocrystalline diamond films.

  14. Diamond Ranch High School.

    ERIC Educational Resources Information Center

    Betsky, Aaron

    2000-01-01

    Highlights award-winning Diamond Ranch High School (California) that was designed and built on a steep site around Los Angeles considered unsatisfactory for building due to its unstable soils. Building organization is discussed, and photos are provided. (GR)

  15. Amorphous diamond films

    DOEpatents

    Falabella, S.

    1998-06-09

    Amorphous diamond films having a significant reduction in intrinsic stress are prepared by biasing a substrate to be coated and depositing carbon ions thereon under controlled temperature conditions. 1 fig.

  16. Quantum engineering: Diamond envy

    NASA Astrophysics Data System (ADS)

    Nunn, Joshua

    2013-03-01

    Nitrogen atoms trapped tens of nanometres apart in diamond can now be linked by quantum entanglement. This ability to produce and control entanglement in solid systems could enable powerful quantum computers.

  17. Diamond Technology Initiative

    DTIC Science & Technology

    1994-05-01

    thermal stresses of 10 million Watts per meter, 1,000 times better than Zerodur *. This property is also important for many thermal management...products UTD has coated to date include: • Optical windows, lenses, and mirrors . Zinc sulfide infrared windows coated with a 2.5 micron-thick...implants 16, 49 microwave plasma-enhanced CVD 2 mirrors , diamond-coated 49 models of diamond growth 10, 25, 33, 34, 39 moderators 10

  18. High-mobility diamond

    NASA Astrophysics Data System (ADS)

    Landstrass, Maurice I.

    1994-04-01

    Recent improvements in the CVD diamond deposition process have made possible the fabrication of diamond photoconductive diodes with carrier mobility and lifetime exceeding the values typical of natural gemstones. One of the more surprising recent results is that the best room-temperature carrier properties have been measured on polycrystalline diamond films. The combined electron- hole mobility, as measured by transient photoconductivity at low carrier densities, is 4000 square centimeters per volt per second at electric field of 200 volts per centimeter and is comparable to that of the best single-crystal IIa natural diamonds. Carrier lifetimes measured under the same conditions are 150 picoseconds for the CVD diamond films. The collection distance within the diamond films, at the highest applied fields, is comparable to the average film grain size, indicative of little or no carrier scattering at grain boundaries. A comparison of SIMS measurements with electrical results suggest that impurity incorporation in the near grain boundary regions are responsible for controlling the carrier mobility.

  19. Rhenium Alloys as Ductile Substrates for Diamond Thin-Film Electrodes.

    PubMed

    Halpern, Jeffrey M; Martin, Heidi B

    2014-02-01

    Molybdenum-rhenium (Mo/Re) and tungsten-rhenium (W/Re) alloys were investigated as substrates for thin-film, polycrystalline boron-doped diamond electrodes. Traditional, carbide-forming metal substrates adhere strongly to diamond but lose their ductility during exposure to the high-temperature (1000°C) diamond, chemical vapor deposition environment. Boron-doped semi-metallic diamond was selectively deposited for up to 20 hours on one end of Mo/Re (47.5/52.5 wt.%) and W/Re (75/25 wt.%) alloy wires. Conformal diamond films on the alloys displayed grain sizes and Raman signatures similar to films grown on tungsten; in all cases, the morphology and Raman spectra were consistent with well-faceted, microcrystalline diamond with minimal sp(2) carbon content. Cyclic voltammograms of dopamine in phosphate-buffered saline (PBS) showed the wide window and low baseline current of high-quality diamond electrodes. In addition, the films showed consistently well-defined, dopamine electrochemical redox activity. The Mo/Re substrate regions that were uncoated but still exposed to the diamond-growth environment remained substantially more flexible than tungsten in a bend-to-fracture rotation test, bending to the test maximum of 90° and not fracturing. The W/Re substrates fractured after a 27° bend, and the tungsten fractured after a 21° bend. Brittle, transgranular cleavage fracture surfaces were observed for tungsten and W/Re. A tension-induced fracture of the Mo/Re after the prior bend test showed a dimple fracture with a visible ductile core. Overall, the Mo/Re and W/Re alloys were suitable substrates for diamond growth. The Mo/Re alloy remained significantly more ductile than traditional tungsten substrates after diamond growth, and thus may be an attractive metal substrate for more ductile, thin-film diamond electrodes.

  20. Rhenium Alloys as Ductile Substrates for Diamond Thin-Film Electrodes

    PubMed Central

    Halpern, Jeffrey M.; Martin, Heidi B.

    2014-01-01

    Molybdenum-rhenium (Mo/Re) and tungsten-rhenium (W/Re) alloys were investigated as substrates for thin-film, polycrystalline boron-doped diamond electrodes. Traditional, carbide-forming metal substrates adhere strongly to diamond but lose their ductility during exposure to the high-temperature (1000°C) diamond, chemical vapor deposition environment. Boron-doped semi-metallic diamond was selectively deposited for up to 20 hours on one end of Mo/Re (47.5/52.5 wt.%) and W/Re (75/25 wt.%) alloy wires. Conformal diamond films on the alloys displayed grain sizes and Raman signatures similar to films grown on tungsten; in all cases, the morphology and Raman spectra were consistent with well-faceted, microcrystalline diamond with minimal sp2 carbon content. Cyclic voltammograms of dopamine in phosphate-buffered saline (PBS) showed the wide window and low baseline current of high-quality diamond electrodes. In addition, the films showed consistently well-defined, dopamine electrochemical redox activity. The Mo/Re substrate regions that were uncoated but still exposed to the diamond-growth environment remained substantially more flexible than tungsten in a bend-to-fracture rotation test, bending to the test maximum of 90° and not fracturing. The W/Re substrates fractured after a 27° bend, and the tungsten fractured after a 21° bend. Brittle, transgranular cleavage fracture surfaces were observed for tungsten and W/Re. A tension-induced fracture of the Mo/Re after the prior bend test showed a dimple fracture with a visible ductile core. Overall, the Mo/Re and W/Re alloys were suitable substrates for diamond growth. The Mo/Re alloy remained significantly more ductile than traditional tungsten substrates after diamond growth, and thus may be an attractive metal substrate for more ductile, thin-film diamond electrodes. PMID:25404788

  1. Cryotribology of diamond and graphite

    SciTech Connect

    Iwasa, Yukikazu; Ashaboglu, A.F.; Rabinowicz, E.R.

    1996-12-31

    An experimental study was carried out on the tribological behavior of materials of interest in cryogenic applications, focusing on diamond and graphite. Both natural diamond (referred in the text as diamond) and chemical-vapor-deposition (CVD) diamond (CVD-diamond) were used. The experiment was carried out using a pin-on-disk tribometer capable of operating at cryogenic temperatures, from 4.2 to 293 K. Two basic scenarios of testing were used: (1) frictional coefficient ({mu}) vs velocity (v) characteristics at constant temperatures; (2) {mu} vs temperature (T) behavior at fixed sliding speeds. For diamond/CVD-diamond, graphite/CVD-diamond, stainless steel/CVD-diamond pairs, {mu}`s are virtually velocity independent. For each of diamond/graphite, alumina/graphite, and graphite/graphite pairs, the {partial_derivative}{mu}/{partial_derivative}v characteristic is favorable, i.e., positive. For diamond/CVD-diamond and graphite/CVD-diamond pairs, {mu}`s are nearly temperature independent between in the range 77 - 293 K. Each {mu} vs T plot for pin materials sliding on graphite disks has a peak at a temperature in the range 100 - 200 K.

  2. Positron annihilation spectroscopic studies of Mn substitution-induced cubic to tetragonal transformation in ZnFe2-xMnxO4 (x = 0.0-2.0) spinel nanocrystallites

    NASA Astrophysics Data System (ADS)

    Cyriac, Jincemon; Mundiyaniyil Thankachan, Rahul; Raneesh, B.; Nambissan, P. M. G.; Sanyal, D.; Kalarikkal, Nandakumar

    2015-12-01

    The replacement of cations at the B-sites in the spinel ferrite ZnFe2O4 by Mn3+ ions brings in several interesting changes, the most striking among them being a transformation from the spinel cubic structure to a body-centered tetragonal one. Concomitantly, there are variations in the nanocrystallite sizes and also in the lattice parameters. These are examined through high-precision X-ray diffraction measurements and transmission electron microscopic analysis. A more interesting aspect is the success of positron annihilation spectroscopy comprising of the measurements of positron lifetime and coincidence Doppler broadening measurements in understanding the effects of cation replacement and the resultant generation of vacancy-type defects. There are definite changes in the positron lifetimes and intensities which show positron trapping in trivacancy-type defect clusters and the nanocrystallite surfaces. The presence of ortho-positronium atoms within the extended intercrystallite region is also identified, although in small concentrations. The cubic to tetragonal transformation is indicated through definite decrease in the values of the positron lifetimes. We also performed a model analysis to predict the expected effect of substitution on the positron lifetime in the bulk of the sample and the experimentally obtained positron lifetimes significantly differed, indirectly hinting at the possibility of a structural transformation. Finally, Mössbauer spectroscopic studies have indicated a ferromagnetic nature for one of the samples, i.e. the one with Mn3+ doping concentration x = 0.4, which incidentally had the lowest crystallite size ~10 nm.

  3. Large improvement of phosphorus incorporation efficiency in n-type chemical vapor deposition of diamond

    NASA Astrophysics Data System (ADS)

    Ohtani, Ryota; Yamamoto, Takashi; Janssens, Stoffel D.; Yamasaki, Satoshi; Koizumi, Satoshi

    2014-12-01

    Microwave plasma enhanced chemical vapor deposition is a promising way to generate n-type, e.g., phosphorus-doped, diamond layers for the fabrication of electronic components, which can operate at extreme conditions. However, a deeper understanding of the doping process is lacking and low phosphorus incorporation efficiencies are generally observed. In this work, it is shown that systematically changing the internal design of a non-commercial chemical vapor deposition chamber, used to grow diamond layers, leads to a large increase of the phosphorus doping efficiency in diamond, produced in this device, without compromising its electronic properties. Compared to the initial reactor design, the doping efficiency is about 100 times higher, reaching 10%, and for a very broad doping range, the doping efficiency remains highly constant. It is hypothesized that redesigning the deposition chamber generates a higher flow of active phosphorus species towards the substrate, thereby increasing phosphorus incorporation in diamond and reducing deposition of phosphorus species at reactor walls, which additionally reduces undesirable memory effects.

  4. Large improvement of phosphorus incorporation efficiency in n-type chemical vapor deposition of diamond

    SciTech Connect

    Ohtani, Ryota; Yamamoto, Takashi; Janssens, Stoffel D.; Yamasaki, Satoshi

    2014-12-08

    Microwave plasma enhanced chemical vapor deposition is a promising way to generate n-type, e.g., phosphorus-doped, diamond layers for the fabrication of electronic components, which can operate at extreme conditions. However, a deeper understanding of the doping process is lacking and low phosphorus incorporation efficiencies are generally observed. In this work, it is shown that systematically changing the internal design of a non-commercial chemical vapor deposition chamber, used to grow diamond layers, leads to a large increase of the phosphorus doping efficiency in diamond, produced in this device, without compromising its electronic properties. Compared to the initial reactor design, the doping efficiency is about 100 times higher, reaching 10%, and for a very broad doping range, the doping efficiency remains highly constant. It is hypothesized that redesigning the deposition chamber generates a higher flow of active phosphorus species towards the substrate, thereby increasing phosphorus incorporation in diamond and reducing deposition of phosphorus species at reactor walls, which additionally reduces undesirable memory effects.

  5. The Diamond Makers

    NASA Astrophysics Data System (ADS)

    Hazen, Robert M.

    1999-08-01

    Since time immemorial, we have treasured diamonds for their exquisite beauty and unrivaled hardness. Yet, most of the earth's diamonds lie deep underground and totally unaccessible to us--if only we knew how to fabricate them! In The Diamond Makers Robert Hazen vividly recounts the very human desire to exceed nature and create a synthetic diamond. Spanning centuries of ground-breaking science, instances of bitter rivalry, cases of outright fraud and self-delusion, Hazen blends drama and science to reveal the extraordinary technological advances and devastating failures of the diamond industry. Along the way, readers will be introduced to the brilliant, often eccentric and controversial, pioneers of high-pressure research who have harnessed crushing pressures and scorching temperatures to transform almost any carbon-rich material, from road tar to peanut butter, into the most prized of all gems. Robert M. Hazen is the author of fifteen books, including the bestseller, Science Matters: Achieving Scientific Literacy, which he wrote with James Trefil. Dr. Hazen has won numerous awards for his research and scientific writing.

  6. Heteroepitaxial diamond growth

    NASA Astrophysics Data System (ADS)

    Markunas, R. J.; Rudder, R. A.; Posthill, J. B.; Thomas, R. E.; Hudson, G.

    1994-02-01

    Technical highlights from 1993 include the following: Growth Chemistries: A clear correlation was observed between ionization potential of feedstock gasses and critical power necessary for inductive coupling of the plasma and consequent diamond growth. Substrate preparation and epitaxial film quality: Ion-implantation of C and O has been coupled with either electrochemical etching or acid cleaning for surface preparation prior to homoepitaxial growth. Reactor modifications: Key improvements were made to the RF reactor to allow for long growths to consolidate substrates. Liquid mass flow controllers were added to precisely meter both the water and selected alcohol. Ion-implantation and lift off: Lift off of diamond platelets has been achieved with two processes. Ion-implantation of either C or O followed by annealing and implantation of either C or O followed by water based electrolysis. Diamond characterization: Development of novel detect characterization techniques: (1) Etch delineation of defects by exposure to propane torch flame. (2) Hydrogen plasma exposure to enhance secondary electron emission and provide non-topographical defect contrast. Acetylene will react at room temperature with sites created by partial desorption of oxygen from the (100) diamond surface. Thermal desorption measurements give an apparent activation energy for CO desorption from diamond (100) of 45 kcal/mol. Quantum chemical calculations indicate an activation energy of 38 kcal/mol for CO desorption. Ab initio calculations on (100) surfaces indicates that oxygen adsorbed at one dimer site has an effect on the dimerization of an adjacent site.

  7. Erbium ion implantation into diamond - measurement and modelling of the crystal structure.

    PubMed

    Cajzl, Jakub; Nekvindová, Pavla; Macková, Anna; Malinský, Petr; Sedmidubský, David; Hušák, Michal; Remeš, Zdeněk; Varga, Marián; Kromka, Alexander; Böttger, Roman; Oswald, Jiří

    2017-02-22

    Diamond is proposed as an extraordinary material usable in interdisciplinary fields, especially in optics and photonics. In this contribution we focus on the doping of diamond with erbium as an optically active centre. In the theoretical part of the study based on DFT simulations we have developed two Er-doped diamond structural models with 0 to 4 carbon vacancies in the vicinity of the Er atom and performed geometry optimizations by the calculation of cohesive energies and defect formation energies. The theoretical results showed an excellent agreement between the calculated and experimental cohesive energies for the parent diamond. The highest values of cohesive energies and the lowest values of defect formation energies were obtained for models with erbium in the substitutional carbon position with 1 or 3 vacancies in the vicinity of the erbium atom. From the geometry optimization the structural model with 1 vacancy had an octahedral symmetry whereas the model with 3 vacancies had a coordination of 10 forming a trigonal structure with a hexagonal ring. In the experimental part, erbium doped diamond crystal samples were prepared by ion implantation of Er(+) ions using ion implantation fluences ranging from 1 × 10(14) ions per cm(2) to 5 × 10(15) ions per cm(2). The experimental results revealed a high degree of diamond structural damage after the ion implantation process reaching up to 69% of disordered atoms in the samples. The prepared Er-doped diamond samples annealed at the temperatures of 400, 600 and 800 °C in a vacuum revealed clear luminescence, where the 〈110〉 cut sample has approximately 6-7 times higher luminescence intensity than the 〈001〉 cut sample with the same ion implantation fluence. The reported results are the first demonstration of the Er luminescence in the single crystal diamond structure for the near-infrared spectral region.

  8. Diamond Nanowire for UV Detection

    DTIC Science & Technology

    2010-02-28

    addition to the stated goal of solar - blind , radiation-hard diamond nanowire UV detectors [3]. The use of diamond nanowires in field-effect transistors could...the next phase. As a result, a working diamond nanowire UV detector can be expected within the coming few months. And, a completely new diamond...attractive candidate for use in ultraviolet ( UV ) light detectors and emitters[2]. Of all known materials, it is the hardest, and has the highest

  9. First-principles calculation of a negatively charged boron-vacancy center in diamond

    NASA Astrophysics Data System (ADS)

    Kunisaki, Aiko; Muruganathan, Manoharan; Mizuta, Hiroshi; Kodera, Tetsuo

    2017-04-01

    As the boron doping in diamond has been well established, and a negatively charged boron-vacancy (BV) center has an active electron paramagnetic resonance, the BV center is an attractive candidate for spin information devices. Using the first-principles calculation, we report the electronic structure of the BV center in diamond for its various charge states. A geometrically optimized BV center in the diamond supercell exhibited C 3 v symmetry. The BV+1 charge state did not exhibit any spin splitting defect levels, while the BV0 and BV‑2 charge states showed a small energy separation between spin-polarized states. On the other hand, the negatively charged BV‑1 center possesses bound states with a larger separation inside the diamond bandgap. Moreover, it has the spin-triplet ground state and the spin-conserved triplet excited state. These characteristics indicate that the BV‑1 center in diamond is a good candidate for qubit operation.

  10. Quantifying selective alignment of ensemble nitrogen-vacancy centers in (111) diamond

    SciTech Connect

    Tahara, Kosuke; Ozawa, Hayato; Iwasaki, Takayuki; Hatano, Mutsuko; Mizuochi, Norikazu

    2015-11-09

    Selective alignment of nitrogen-vacancy (NV) centers in diamond is an important technique towards its applications. Quantification of the alignment ratio is necessary to design the optimized diamond samples. However, this is not a straightforward problem for dense ensemble of the NV centers. We estimate the alignment ratio of ensemble NV centers along the [111] direction in (111) diamond by optically detected magnetic resonance measurements. Diamond films deposited by N{sub 2} doped chemical vapor deposition have NV center densities over 1 × 10{sup 15 }cm{sup −3} and alignment ratios over 75%. Although spin coherence time (T{sub 2}) is limited to a few μs by electron spins of nitrogen impurities, the combination of the selective alignment and the high density can be a possible way to optimize NV-containing diamond samples for the sensing applications.

  11. Diamond collecting in northern Colorado.

    USGS Publications Warehouse

    Collins, D.S.

    1982-01-01

    The discovery of numerous diamond-bearing kimberlite diatremes in the N Front Range of Colorado and Wyoming is of both scientific and economic interest. Species recovered from heavy-mineral concentrates include Cr-diopside, spinel, Mg-ilmenite, pyrope and diamond. A nodule tentatively identified as a graphite-diamond eclogite was also found. -G.W.R.

  12. Making Diamond in the Laboratory

    ERIC Educational Resources Information Center

    Strong, Herbert

    1975-01-01

    Discusses the graphite to diamond transformation and a phase diagram for carbon. Describes high temperature-higher pressure experimental apparatus and growth of diamonds from seed crystals. Reviews properties of the diamond which suggest uses for the synthetic product. Illustrations with text. (GH)

  13. Cytotoxicity induced by engineered silver nanocrystallites is dependent on surface coatings and cell types.

    PubMed

    Suresh, Anil K; Pelletier, Dale A; Wang, Wei; Morrell-Falvey, Jennifer L; Gu, Baohua; Doktycz, Mitchel J

    2012-02-07

    Due to their unique antimicrobial properties silver nanocrystallites have garnered substantial attention and are used extensively for biomedical applications as an additive to wound dressings, surgical instruments and bone substitute materials. They are also released into unintended locations such as the environment or biosphere. Therefore it is imperative to understand the potential interactions, fate and transport of nanoparticles with environmental biotic systems. Numerous factors including the composition, size, shape, surface charge, and capping molecule of nanoparticles are known to influence cell cytotoxicity. Our results demonstrate that the physical/chemical properties of the silver nanoparticles including surface charge, differential binding and aggregation potential, which are influenced by the surface coatings, are a major determining factor in eliciting cytotoxicity and in dictating potential cellular interactions. In the present investigation, silver nanocrystallites with nearly uniform size and shape distribution but with different surface coatings, imparting overall high negativity to high positivity, were synthesized. These nanoparticles included poly(diallyldimethylammonium) chloride-Ag, biogenic-Ag, colloidal-Ag (uncoated), and oleate-Ag with zeta potentials +45 ± 5, -12 ± 2, -42 ± 5, and -45 ± 5 mV, respectively; the particles were purified and thoroughly characterized so as to avoid false cytotoxicity interpretations. A systematic investigation on the cytotoxic effects, cellular response, and membrane damage caused by these four different silver nanoparticles was carried out using multiple toxicity measurements on mouse macrophage (RAW-264.7) and lung epithelial (C-10) cell lines. Our results clearly indicate that the cytotoxicity was dependent on various factors such as surface charge and coating materials used in the synthesis, particle aggregation, and the cell-type for the different silver nanoparticles that were investigated. Poly

  14. Zr/oxidized diamond interface for high power Schottky diodes

    SciTech Connect

    Traoré, A. Muret, P.; Fiori, A.; Eon, D.; Gheeraert, E.; Pernot, J.

    2014-02-03

    High forward current density of 10{sup 3} A/cm{sup 2} (at 6 V) and a breakdown field larger than 7.7 MV/cm for diamond diodes with a pseudo-vertical architecture, are demonstrated. The power figure of merit is above 244 MW/cm{sup 2} and the relative standard deviation of the reverse current density over 83 diodes is 10% with a mean value of 10{sup −9} A/cm{sup 2}. These results are obtained with zirconium as Schottky contacts on the oxygenated (100) oriented surface of a stack comprising an optimized lightly boron doped diamond layer on a heavily boron doped one, epitaxially grown on a Ib substrate. The origin of such performances are discussed.

  15. Heteroepitaxial Diamond Growth

    DTIC Science & Technology

    1993-01-12

    of CH3 and C6 H6 adsorbed on nickel. Calculated chemisorption energies of pyramidal CH3 on Ni(l 11) are 38 for the clean surface and 50 , 47, and 17... results from early experiments on the diamond (100) surface . In Figure 3.1 we can easily distinguish features associated with the conversion of the...those 5 reports were for fairly thin (< 2 gm) epitaxial layers. The results reported there for homoepitaxy on the diamond (100) surface were quite

  16. Chemical Vapor Deposited Diamond

    DTIC Science & Technology

    1991-09-27

    surface roughness. 0.9 0.8 p0.7 0.6 0.5 C0.4 0.3 0.2- 0.1- 0-. 0 50 100 150 200 250 300 350 frequency (cm-1) Figure 10. Transmission spectrum of CVD...significantly less than one micrometer. The resultant films show root-mean- squared surface roughnesses -0.02 pm as long as the film thickness is not much... Derjaguin , B.V., Vapor Growth of Diamond on Diamond and Other Surfaces , J. Cryst. Growth 52:219-226 (1981); Spitsyn, B.V., The State of the Art in

  17. Applications Of Diamond In Optics

    NASA Astrophysics Data System (ADS)

    Seal, M.; van Enckevort, W. J. P.

    1989-01-01

    This paper reviews existing and new applications of single crystal diamond, both natural and synthetic, in optical science. The traditional application is as transmissive components, making use of the very wide spectral transmission range, high thermal conductivity, and chemical inertness of diamond. Diamond windows for corrosive environments are well known; diamond surgical endoscope components are under development; and the use of sharpened diamonds as combined surgical cutting instruments and light pipes for internal illumination of the edge is commercial reality. The superb ability of diamond to conduct heat, combined with its very low thermal expansion coefficient makes it suitable for the transmission of high power laser energy, though there is a problem currently being addressed of a high surface reflection coefficient. It is very probable that CVD diamond-like films will form good anti-reflection coatings for diamond. In new applications, the technology of making diamond lenses is being developed. The use of diamond as a detector of ionising radiation is well known, but recent work shows its possibilities in thermoluminescent as well as conduction and pulse counting modes. There are further possibilities of using diamond for the detection and measurement of optical radiation. Examples are low, medium, and high intensity far ultraviolet (< 225 nm) and very high intensity near ultraviolet and visible light from excimer, dye, or argon lasers. Diamond is very radiation resistant! Sensitivities, response times and impurity trap levels have been measured and appropriate diamonds can be synthesised. The use of diamond as fast opto-electronic switches has been reported in the literature and the mechanical and thermal design of diamond "heat sink" substrates for semiconductor laser diodes is advancing rapidly.

  18. Subbandgap-excited photoconductivity in CVD diamond films

    NASA Astrophysics Data System (ADS)

    Beetz, Charles P., Jr.; Lincoln, B. A.; Winn, David R.

    1990-12-01

    The results of room-temperature photoconductivity measurements on free-standing diamond films are reported. The films were grown on Si(100) substrates by hot filament-assisted chemical vapor deposition (CVD) from a methane/hydrogen mixture and ranged in thickness from 40 to 100 pm. The observed photocurrents in unintentionally doped films increased monotonically with increasing excitation energy. The films are found to exhibit photocurrent excitation similar to that observed for bulk diamond. In films doped with either N or Li the photocurrent exhibited broad structure superposed on the monotonic background. The photocurrent was found to depend on the chopping frequency of the excitation light decreasing with increasing chopper frequency indicative of trapping center dominated recombination dynamics. Schottky barrier heights were determined from the photoresponse for Au on CVD diamond film and on (100) oriented single crystalline type ila natural diamond. The measured barrier heights were 2. 02 and 2. 24 eV respectively in good agreement with previously measured values. A second barrier height was obtained from a threshold for internal photoemission at lower energies P4. 35 eV. We were able to observe for the first time an optical enhancement of 20X in the photocurrent using an optical biasing technique. 1.

  19. A New Dopant of NaN3 for High-Concentration-Nitrogen Diamond Synthesized by HPHT

    NASA Astrophysics Data System (ADS)

    Liang, Zhong-Zhu; Jia, Xiao-Peng; Hisao, Kanda; Ma, Hong-An; Wang, Dong-Mei; Liu, Wan-Qiang; Yu, Run-Ze

    2007-02-01

    Nitrogen is successfully doped in diamond by adding sodium azide (NaN3) as the source of nitrogen to the graphite and iron powders. The diamond crystals with high nitrogen concentration, 1000-2200 ppm, which contain the same concentrations of nitrogen with natural diamond, have been synthesized by using the system of iron-carbon-additive NaN3. The nitrogen concentrations in diamond increase with the increasing content of NaN3. When the content of NaN3 is increased to 0.7-1.3 wt.%, the nitrogen concentration in the diamond almost remains in a nitrogen concentration range from 1250 ppm to 2200 ppm, which is the highest value and several times higher than that in the diamond synthesized by a conventional method without additive NaN3 under high pressure and high temperature (HPHT) conditions.

  20. Fluidized bed deposition of diamond

    DOEpatents

    Laia, Jr., Joseph R.; Carroll, David W.; Trkula, Mitchell; Anderson, Wallace E.; Valone, Steven M.

    1998-01-01

    A process for coating a substrate with diamond or diamond-like material including maintaining a substrate within a bed of particles capable of being fluidized, the particles having substantially uniform dimensions and the substrate characterized as having different dimensions than the bed particles, fluidizing the bed of particles, and depositing a coating of diamond or diamond-like material upon the substrate by chemical vapor deposition of a carbon-containing precursor gas mixture, the precursor gas mixture introduced into the fluidized bed under conditions resulting in excitation mechanisms sufficient to form the diamond coating.

  1. Fabrication of nanocrystallites in the SiOx matrix applicable in microelectronics

    NASA Astrophysics Data System (ADS)

    Kolodziej, Tomasz

    2013-07-01

    The development of the technology of fabricating hydrogenated amorphous silicon (a-Si:H) or silicon oxide (SiOx) matrix with nanocrystalline inclusions (nc-Si:H) is the next step in improving the properties of electronic devices, such as solar cells, thin film transistors (TFT), floating gate transistors and others. Those films exhibit increased stability, absorption and carrier mobility. This paper is focused on the technology of manufacturing such films by means of Radio Frequency Plasma Enhanced Chemical Vapor Deposition (RF PECVD), which is use to fabricate electronic devices. The technology was developed in the Semiconductor Thin Films and Solar Cells Laboratory at the Department of Electronics at the AGH University of Science and Technology. The author describes the manufacturing process based on periodical variation of the process parameters, such as hydrogen to silane ratio (Rh), gas flows, RF power and pressure in the process chamber, during the deposition process. The author also presents the results of the measurements of typical samples with High Resolution Transmission Electron Microscopy (HRTEM), which confirms the existence of the nanocrystallites in the a-Si:H/SiOx matrix.

  2. One-step solid state synthesis of capped γ-Fe(2)O(3) nanocrystallites.

    PubMed

    Zboril, R; Bakandritsos, A; Mashlan, M; Tzitzios, V; Dallas, P; Trapalis, Ch; Petridis, D

    2008-03-05

    The thermally induced solid state synthesis of soluble organophilic maghemite (γ-Fe(2)O(3)) nanocrystallites is described. The solvent-free one-step synthesis involves the reaction in the melt state of Fe(NO)(3)·9H(2)O and RCOOH (R = C(11)H(23), C(15)H(31)) at 240 °C. The method yields well-crystallized nanoparticles of γ-Fe(2)O(3) functionalized with the corresponding aliphatic acid. Transmission electron microscopy (TEM) and atomic force microscopy (AFM) observations reveal composite particles with faceted magnetic cores and average size of 20 nm, which are well capped with the surrounding organic sheath. The Fourier transform infrared (FT-IR) spectra and thermal analysis suggest a bimodal configuration of the organic shell including chemically coordinated and physisorbed molecules of aliphatic acid. The chemical bonding of the carboxylate groups to the surface iron atoms is also indicated by a paramagnetic doublet with unchanged area in the variable temperature Mössbauer spectra. The spinel γ-Fe(2)O(3) particles exhibit perfect structural and magnetic ordering, including the almost ideal ratio of octahedral to tetrahedral positions (5/3) and very low degree of spin canting, as confirmed by in-field Mössbauer spectroscopy. Magnetic measurements demonstrate the suitable properties required in various (bio)magnetic applications like superparamagnetic behavior at room temperature, high saturation magnetization achievable at low applied fields and suppressed magnetic interactions.

  3. Ruthenium polypyridyl TG6 dye for the sensitization of nanoparticle and nanocrystallite spherical aggregate photoelectrodes.

    PubMed

    Hosni, M; Kusumawati, Y; Farhat, S; Jouini, N; Ivansyah, A L; Martoprawiro, M A; Pauporté, Th

    2015-01-28

    A ruthenium polypyridyl dye containing a hexasulfanyl-styryl modified bipyridyl group as ancillary ligand, coded TG6, is investigated as a sensitizer for ZnO-based dye-sensitized solar cells (DSSCs). The advantages of this dye are a broad wavelength absorption spectrum, a large loading in ZnO photoelectrodes, a significantly larger extinction coefficient compared to more classical Ru-polypyridyl dyes, and the formation of less agglomerate in the pores of the ZnO layers. TG6 has been used to sensitize ZnO nanorod particle layers of high structural quality and ZnO layers made of submicrometer spheres composed of aggregated nanocrystallites and that develop an internal surface area. The latter are highly light-scattering in the visible wavelength region but more difficult to sensitize correctly. The TG6 dye has been compared with the metal-free D149 dye and has been shown more efficient for photoconversion. The best performances have been obtained by combining TG6 with the nanorod layer, the optimal power conversion efficiency being measured at 5.30% in that case. The cells have been investigated by impedance spectroscopy over a large applied voltage range. We especially show that the submicrometer sphere layers exhibit lower conductivity and lower charge collection efficiency as compared to the nanorod particle ones.

  4. Tuning the size and magnetic properties of ZnxCo₁-xFe₂O₄ nanocrystallites.

    PubMed

    Schmidt, Martin; Andersen, Henrik L; Granados-Miralles, Cecilia; Saura-Múzquiz, Matilde; Stingaciu, Marian; Christensen, Mogens

    2016-04-21

    Magnetically soft zinc-substituted cobalt ferrite ZnxCo1-xFe2O4 (x = 0.4, 0.5 and 0.6) nanocrystallites were successfully synthesized from cheap, abundant materials, using a mild, scalable hydrothermal route. The partial substitution of zinc by cobalt was generally observed to reduce the resulting crystallite sizes and the saturation magnetization. Post-synthesis annealing proved to be an efficient way of inducing crystallite growth to a certain limit, thereby improving the magnetic properties. In the annealing experiments crystallite growth was observed to be extremely dependent on the annealing atmosphere, with the size increasing from dynamic vacuum, to air, argon and helium. As prepared crystallite sizes were found to be between 4.74(1) nm and 5.90(1) nm. Heat treatment caused the growth to increase to anywhere between 7.9 nm and 21.7 nm. The largest crystallite sizes, 35.2(1) nm to 44.9(1) nm, were reached by compaction of the powders prior to heating. The largest magnetizations were generally observed in the largest samples containing the least amount of zinc. The highest observed saturation magnetization was 80.49(1) emu g(-1) measured for a sample with 35.2(1) nm sized crystallites of the composition Zn0.35Co0.66Fe1.99O4.

  5. Stabilization of Au at edges of bimetallic PdAu nanocrystallites.

    PubMed

    Yudanov, Ilya V; Neyman, Konstantin M

    2010-05-21

    Density functional calculations were performed to study the distribution of Au atoms in bimetallic PdAu nanoparticles. A series of Pd(79-n)Au(n) clusters of truncated octahedral shape with different content of Au ranging from n = 1 to 60 was used to model such bimetallic nanosystems. Segregation of Au to the particle surface is found to be thermodynamically favorable. The most stable sites for Au substitution are located at the edges of the PdAu nanoclusters. The stabilization at the edges is rationalized by their higher flexibility for surface relaxation which minimizes the strain induced by larger atomic radius of Au as compared to Pd. This stabilization of Au at the edges indicates the possibility to synthesize PdAu particles with Pd atoms located mainly on the facets, and edges "decorated" by Au atoms. Such nanocrystallites are expected to exhibit peculiar catalytic properties and, being thermodynamically stable, should be prone to retaining their initial shape under catalytic conditions.

  6. How the C-O bond breaks during methanol decomposition on nanocrystallites of palladium catalysts.

    PubMed

    Yudanov, Ilya V; Matveev, Alexei V; Neyman, Konstantin M; Rösch, Notker

    2008-07-23

    Experimental findings imply that edge sites (and other defects) on Pd nanocrystallites exposing mainly (111) facets in supported model catalysts are crucial for catalyst modification via deposition of CH(x) (x = 0-3) byproducts of methanol decomposition. To explore this problem computationally, we applied our recently developed approach to model realistically metal catalyst particles as moderately large three-dimensional crystallites. We present here the first results of this advanced approach where we comprehensively quantify the reactivity of a metal catalyst in an important chemical process. In particular, to unravel the mechanism of how CH(x) species are formed, we carried out density functional calculations of C-O bond scission in methanol and various dehydrogenated intermediates (CH3O, CH2OH, CH2O, CHO, CO), deposited on the cuboctahedron model particle Pd79. We calculated the lowest activation barriers, approximately 130 kJ mol(-1), of C-O bond breaking and the most favorable thermodynamics for the adsorbed species CH3O and CH2OH which feature a C-O single bond. In contrast, dissociation of adsorbed CO was characterized as negligibly slow. From the computational result that the decomposition products CH3 and CH2 preferentially adsorb at edge sites of nanoparticles, we rationalize experimental data on catalyst poisoning.

  7. Copper selenide nanowires and nanocrystallites in alumina: Carrier relaxation, recombination, and trapping

    NASA Astrophysics Data System (ADS)

    Statkutė, G.; Tomašiùnas, R.; Jagminas, A.

    2007-06-01

    Nonequilibrium carrier dynamics in copper selenide (Cu2-δSe δ=0.15, Cu3Se2) nanowires (diameter ≈18 nm, height ≈2 μm) and nanocrystallites (diameter≈18 nm) in femto- and picosecond time domains by the means of a transient dynamic grating technique were investigated. Bulk and quantum confinement approaches were used to fit the experimental results using nonequilibrium carrier fast relaxation, recombination, and trapping mechanisms. A nonradiative Auger recombination was concluded to be the main mechanism of nonequilibrium carrier recombination. The Auger coefficient for copper selenide was estimated of the order of 10-30-10-29 cm6 s-1. Hole trapping at shallow impurity centers in nanowires was interpreted. From calculating the experimental results the trapping parameters and high concentration of centers >1020 cm-3 were evaluated. Finally, direct measurement of carrier lifetime in copper selenide nanostructures showed values of the order of ≈10-10 s. Samples were characterized by the means of transmission electron microscopy, scanning electron microscopy, x-ray diffraction, and optical spectroscopy.

  8. Structural and multiferroic properties of barium substituted bismuth ferrite nanocrystallites prepared by sol-gel method

    NASA Astrophysics Data System (ADS)

    Anju; Agarwal, Ashish; Aghamkar, Praveen; Lal, Bhajan

    2017-03-01

    Nanocrystalline Bi1-xBaxFeO3 (0≤x≤0.3) multiferroics were efficiently obtained by sol-gel method after sintering at 800 °C for one hour. The Ba substitution in BiFeO3 (BFO) strongly modifies its structural and multiferroic properties. XRD studies revealed the structural transition from distorted rhombohedral (R3c) to pseudo-cubic (Pm3m) crystal symmetry. The magnetization increases appreciably for x=0.1, which is due to spin canting of magnetic moments at the nanoparticle surfaces and decreases afterward. From the temperature dependent magnetization studies, it is found that magnetic transition temperature (TN) is 620 K for x=0 and 640 K for x=0.1. Besides, the maximum polarisation value decreases with increasing Ba content. SEM micrographs revealed the formation of cubic nanocrystallites with increased porosity on Ba substitution. FTIR analysis of the samples also supports the structural change towards increased crystal symmetry.

  9. DIAMOND AMPLIFIED PHOTOCATHODES.

    SciTech Connect

    SMEDLEY,J.; BEN-ZVI, I.; BOHON, J.; CHANG, X.; GROVER, R.; ISAKOVIC, A.; RAO, T.; WU, Q.

    2007-11-26

    High-average-current linear electron accelerators require photoinjectors capable of delivering tens to hundreds of mA average current, with peak currents of hundreds of amps. Standard photocathodes face significant challenges in meeting these requirements, and often have short operational lifetimes in an accelerator environment. We report on recent progress toward development of secondary emission amplifiers for photocathodes, which are intended to increase the achievable average current while protecting the cathode from the accelerator. The amplifier is a thin diamond wafer which converts energetic (few keV) primary electrons into hundreds of electron-hole pairs via secondary electron emission. The electrons drift through the diamond under an external bias and are emitted into vacuum via a hydrogen-terminated surface with negative electron affinity (NEA). Secondary emission gain of over 200 has been achieved. Two methods of patterning diamond, laser ablation and reactive-ion etching (RIE), are being developed to produce the required geometry. A variety of diagnostic techniques, including FTIR, SEM and AFM, have been used to characterize the diamonds.

  10. 'Diamond' in 3-D

    NASA Technical Reports Server (NTRS)

    2004-01-01

    This 3-D, microscopic imager mosaic of a target area on a rock called 'Diamond Jenness' was taken after NASA's Mars Exploration Rover Opportunity ground into the surface with its rock abrasion tool for a second time.

    Opportunity has bored nearly a dozen holes into the inner walls of 'Endurance Crater.' On sols 177 and 178 (July 23 and July 24, 2004), the rover worked double-duty on Diamond Jenness. Surface debris and the bumpy shape of the rock resulted in a shallow and irregular hole, only about 2 millimeters (0.08 inch) deep. The final depth was not enough to remove all the bumps and leave a neat hole with a smooth floor. This extremely shallow depression was then examined by the rover's alpha particle X-ray spectrometer.

    On Sol 178, Opportunity's 'robotic rodent' dined on Diamond Jenness once again, grinding almost an additional 5 millimeters (about 0.2 inch). The rover then applied its Moessbauer spectrometer to the deepened hole. This double dose of Diamond Jenness enabled the science team to examine the rock at varying layers. Results from those grindings are currently being analyzed.

    The image mosaic is about 6 centimeters (2.4 inches) across.

  11. CVD diamond - fundamental phenomena

    SciTech Connect

    Yarbrough, W.A.

    1993-01-01

    This compilation of figures and diagrams addresses the basic physical processes involved in the chemical vapor deposition of diamond. Different methods of deposition are illustrated. For each method, observations are made of the prominent advantages and disadvantages of the technique. Chemical mechanisms of nucleation are introduced.

  12. California: Diamond Valley

    Atmospheric Science Data Center

    2014-05-15

    ... water storage capacity. In addition to routine water management, Diamond Valley Lake is designed to provide protection against ... 20, 2001 (Terra orbit 7564), is a false-color view combining data from the instrument's 26-degree forward view (displayed as blue) with data ...

  13. ELECTRON AMPLIFICATION IN DIAMOND.

    SciTech Connect

    SMEDLEY, J.; BEN-ZVI, I.; BURRILL, A.; CHANG, X.; GRIMES, J.; RAO, T.; SEGALOV, Z.; WU, Q.

    2006-07-10

    We report on recent progress toward development of secondary emission ''amplifiers'' for photocathodes. Secondary emission gain of over 300 has been achieved in transmission mode and emission mode for a variety of diamond samples. Techniques of sample preparation, including hydrogenation to achieve negative electron affinity (NEA), have been adapted to this application.

  14. Diamond growth in mantle fluids

    NASA Astrophysics Data System (ADS)

    Bureau, Hélène; Frost, Daniel J.; Bolfan-Casanova, Nathalie; Leroy, Clémence; Esteve, Imène; Cordier, Patrick

    2016-11-01

    In the upper mantle, diamonds can potentially grow from various forms of media (solid, gas, fluid) with a range of compositions (e.g. graphite, C-O-H fluids, silicate or carbonate melts). Inclusions trapped in diamonds are one of the few diagnostic tools that can constrain diamond growth conditions in the Earth's mantle. In this study, inclusion-bearing diamonds have been synthesized to understand the growth conditions of natural diamonds in the upper mantle. Diamonds containing syngenetic inclusions were synthesized in multi-anvil presses employing starting mixtures of carbonates, and silicate compositions in the presence of pure water and saline fluids (H2O-NaCl). Experiments were performed at conditions compatible with the Earth's geotherm (7 GPa, 1300-1400 °C). Results show that within the timescale of the experiments (6 to 30 h) diamond growth occurs if water and carbonates are present in the fluid phase. Water promotes faster diamond growth (up to 14 mm/year at 1400 °C, 7 GPa, 10 g/l NaCl), which is favorable to the inclusion trapping process. At 7 GPa, temperature and fluid composition are the main factors controlling diamond growth. In these experiments, diamonds grew in the presence of two fluids: an aqueous fluid and a hydrous silicate melt. The carbon source for diamond growth must be carbonate (CO32) dissolved in the melt or carbon dioxide species in the aqueous fluid (CO2aq). The presence of NaCl affects the growth kinetics but is not a prerequisite for inclusion-bearing diamond formation. The presence of small discrete or isolated volumes of water-rich fluids is necessary to grow inclusion-bearing peridotitic, eclogitic, fibrous, cloudy and coated diamonds, and may also be involved in the growth of ultradeep, ultrahigh-pressure metamorphic diamonds.

  15. Lower pressure synthesis of diamond material

    DOEpatents

    Lueking, Angela; Gutierrez, Humberto; Narayanan, Deepa; Burgess Clifford, Caroline E.; Jain, Puja

    2010-07-13

    Methods of synthesizing a diamond material, particularly nanocrystalline diamond, diamond-like carbon and bucky diamond are provided. In particular embodiments, a composition including a carbon source, such as coal, is subjected to addition of energy, such as high energy reactive milling, producing a milling product enriched in hydrogenated tetrahedral amorphous diamond-like carbon compared to the coal. A milling product is treated with heat, acid and/or base to produce nanocrystalline diamond and/or crystalline diamond-like carbon. Energy is added to produced crystalline diamond-like carbon in particular embodiments to produce bucky diamonds.

  16. Single-layer nano-carbon film, diamond film, and diamond/nano-carbon composite film field emission performance comparison

    NASA Astrophysics Data System (ADS)

    Wang, Xiaoping; Wang, Jinye; Wang, Lijun

    2016-05-01

    A series of single-layer nano-carbon (SNC) films, diamond films, and diamond/nano-carbon (D/NC) composite films have been prepared on the highly doped silicon substrate by using microwave plasma chemical vapor deposition techniques. The films were characterised by scanning electron microscopy, Raman spectroscopy, and field emission I-V measurements. The experimental results indicated that the field emission maximum current density of D/NC composite films is 11.8-17.8 times that of diamond films. And the field emission current density of D/NC composite films is 2.9-5 times that of SNC films at an electric field of 3.0 V/μm. At the same time, the D/NC composite film exhibits the advantage of improved reproducibility and long term stability (both of the nano-carbon film within the D/NC composite cathode and the SNC cathode were prepared under the same experimental conditions). And for the D/NC composite sample, a high current density of 10 mA/cm2 at an electric field of 3.0 V/μm was obtained. Diamond layer can effectively improve the field emission characteristics of nano-carbon film. The reason may be due to the diamond film acts as the electron acceleration layer.

  17. 31 CFR 592.310 - Rough diamond.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... 31 Money and Finance:Treasury 3 2011-07-01 2011-07-01 false Rough diamond. 592.310 Section 592.310... ASSETS CONTROL, DEPARTMENT OF THE TREASURY ROUGH DIAMONDS CONTROL REGULATIONS General Definitions § 592.310 Rough diamond. The term rough diamond means any diamond that is unworked or simply sawn,...

  18. 31 CFR 592.310 - Rough diamond.

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... 31 Money and Finance:Treasury 3 2012-07-01 2012-07-01 false Rough diamond. 592.310 Section 592.310... ASSETS CONTROL, DEPARTMENT OF THE TREASURY ROUGH DIAMONDS CONTROL REGULATIONS General Definitions § 592.310 Rough diamond. The term rough diamond means any diamond that is unworked or simply sawn,...

  19. 31 CFR 592.310 - Rough diamond.

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... 31 Money and Finance:Treasury 3 2014-07-01 2014-07-01 false Rough diamond. 592.310 Section 592.310... ASSETS CONTROL, DEPARTMENT OF THE TREASURY ROUGH DIAMONDS CONTROL REGULATIONS General Definitions § 592.310 Rough diamond. The term rough diamond means any diamond that is unworked or simply sawn,...

  20. 31 CFR 592.310 - Rough diamond.

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... 31 Money and Finance:Treasury 3 2013-07-01 2013-07-01 false Rough diamond. 592.310 Section 592.310... ASSETS CONTROL, DEPARTMENT OF THE TREASURY ROUGH DIAMONDS CONTROL REGULATIONS General Definitions § 592.310 Rough diamond. The term rough diamond means any diamond that is unworked or simply sawn,...

  1. 31 CFR 592.310 - Rough diamond.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 31 Money and Finance: Treasury 3 2010-07-01 2010-07-01 false Rough diamond. 592.310 Section 592... FOREIGN ASSETS CONTROL, DEPARTMENT OF THE TREASURY ROUGH DIAMONDS CONTROL REGULATIONS General Definitions § 592.310 Rough diamond. The term rough diamond means any diamond that is unworked or simply...

  2. Analysis of diamond and diamondlike thin films using neutron depth profiling

    SciTech Connect

    Lamaze, G.P.

    1994-12-31

    Much progress in recent years has been made on the development of the technology for the production of thin films of diamond and diamond-like materials. Because of its physical properties, much interest has been shown in diamond as a material to construct semiconductor devices. Among the most important of these physical properties are the highest known thermal conductivity (20 W/cm {times} K), wide energy gap (5.5 eV), and high breakdown fields (107 V/cm). Natural type-II diamond crystals are known to be semiconductors where boron is the dominant acceptor with an activation energy of {approximately}0.3 eV. Recent efforts have concentrated on introducing the boron during the synthesis of thin diamond and diamond-like films. Fujimori et al. have shown that boron doping can be accomplished during the gas-phase growth by adding B{sub 2}H{sub 6} to the gas mixture. Knowing both the concentration and distribution of dopants in the diamond is important both for understanding the synthesis process and the correlation with the physical properties of the material. Neutron depth profiling is a procedure that allows the measurement of the concentration and distribution of the dopant (boron) in chemical vapor deposition diamonds.

  3. Inversion channel diamond metal-oxide-semiconductor field-effect transistor with normally off characteristics

    NASA Astrophysics Data System (ADS)

    Matsumoto, Tsubasa; Kato, Hiromitsu; Oyama, Kazuhiro; Makino, Toshiharu; Ogura, Masahiko; Takeuchi, Daisuke; Inokuma, Takao; Tokuda, Norio; Yamasaki, Satoshi

    2016-08-01

    We fabricated inversion channel diamond metal-oxide-semiconductor field-effect transistors (MOSFETs) with normally off characteristics. At present, Si MOSFETs and insulated gate bipolar transistors (IGBTs) with inversion channels are widely used because of their high controllability of electric power and high tolerance. Although a diamond semiconductor is considered to be a material with a strong potential for application in next-generation power devices, diamond MOSFETs with an inversion channel have not yet been reported. We precisely controlled the MOS interface for diamond by wet annealing and fabricated p-channel and planar-type MOSFETs with phosphorus-doped n-type body on diamond (111) substrate. The gate oxide of Al2O3 was deposited onto the n-type diamond body by atomic layer deposition at 300 °C. The drain current was controlled by the negative gate voltage, indicating that an inversion channel with a p-type character was formed at a high-quality n-type diamond body/Al2O3 interface. The maximum drain current density and the field-effect mobility of a diamond MOSFET with a gate electrode length of 5 μm were 1.6 mA/mm and 8.0 cm2/Vs, respectively, at room temperature.

  4. Inversion channel diamond metal-oxide-semiconductor field-effect transistor with normally off characteristics.

    PubMed

    Matsumoto, Tsubasa; Kato, Hiromitsu; Oyama, Kazuhiro; Makino, Toshiharu; Ogura, Masahiko; Takeuchi, Daisuke; Inokuma, Takao; Tokuda, Norio; Yamasaki, Satoshi

    2016-08-22

    We fabricated inversion channel diamond metal-oxide-semiconductor field-effect transistors (MOSFETs) with normally off characteristics. At present, Si MOSFETs and insulated gate bipolar transistors (IGBTs) with inversion channels are widely used because of their high controllability of electric power and high tolerance. Although a diamond semiconductor is considered to be a material with a strong potential for application in next-generation power devices, diamond MOSFETs with an inversion channel have not yet been reported. We precisely controlled the MOS interface for diamond by wet annealing and fabricated p-channel and planar-type MOSFETs with phosphorus-doped n-type body on diamond (111) substrate. The gate oxide of Al2O3 was deposited onto the n-type diamond body by atomic layer deposition at 300 °C. The drain current was controlled by the negative gate voltage, indicating that an inversion channel with a p-type character was formed at a high-quality n-type diamond body/Al2O3 interface. The maximum drain current density and the field-effect mobility of a diamond MOSFET with a gate electrode length of 5 μm were 1.6 mA/mm and 8.0 cm(2)/Vs, respectively, at room temperature.

  5. Inversion channel diamond metal-oxide-semiconductor field-effect transistor with normally off characteristics

    PubMed Central

    Matsumoto, Tsubasa; Kato, Hiromitsu; Oyama, Kazuhiro; Makino, Toshiharu; Ogura, Masahiko; Takeuchi, Daisuke; Inokuma, Takao; Tokuda, Norio; Yamasaki, Satoshi

    2016-01-01

    We fabricated inversion channel diamond metal-oxide-semiconductor field-effect transistors (MOSFETs) with normally off characteristics. At present, Si MOSFETs and insulated gate bipolar transistors (IGBTs) with inversion channels are widely used because of their high controllability of electric power and high tolerance. Although a diamond semiconductor is considered to be a material with a strong potential for application in next-generation power devices, diamond MOSFETs with an inversion channel have not yet been reported. We precisely controlled the MOS interface for diamond by wet annealing and fabricated p-channel and planar-type MOSFETs with phosphorus-doped n-type body on diamond (111) substrate. The gate oxide of Al2O3 was deposited onto the n-type diamond body by atomic layer deposition at 300 °C. The drain current was controlled by the negative gate voltage, indicating that an inversion channel with a p-type character was formed at a high-quality n-type diamond body/Al2O3 interface. The maximum drain current density and the field-effect mobility of a diamond MOSFET with a gate electrode length of 5 μm were 1.6 mA/mm and 8.0 cm2/Vs, respectively, at room temperature. PMID:27545201

  6. Raman investigation of diamond films

    SciTech Connect

    Feng, Li-Ming

    1993-12-31

    Extensive Raman investigations were conducted on a wide range of diamond films whose structures were dilineated by optical and confocal microscopy. The Raman Spectra from one extreme of this range indicates a very intense 1331 cm{sup {minus}1} line diagnostic of bulk crystalline diamond. Microscopy of the corresponding film shows the presence of many large true diamond crystallite. The 1331 cm{sup {minus}1} Raman line at the other extreme of the range, however, is virtually absent. It is replaced, at this extreme, by a very broad Raman contour whose maxima occur near 1355 cm{sup {minus}1} and 1575 cm{sup {minus}1}. Optical microscopy now reveals a complete lack of diamond crystallites. The ratio of the integrated Raman intensity of the 1331 cm{sup {minus}1} diamond line to the integral of the entire broad contour extending from {approx}1200 cm{sup {minus}1} to 1800 cm{sup {minus}1}, with maxima near 1355 cm{sup {minus}1} and 1575 cm{sup {minus}1}, was determined. This ratio rises with increasing diamond crystallite size, and it decreases as true diamond crystallites are replaced by diamond-like, but amorphous, hard carbon, which produces the broad Raman contour. The measured intensity ratio was analyzed in terms of a differential equation related to phonon coupling. The increase of the intensity ratio of the 1331 cm{sup {minus}1} diagnostic diamond peak is due to phono-phonon coupling between the diamond crystallites, as the concentration of the amorphous diamond-like carbon decreases. Confocal microscopy indicates many amorphous-like regions interspersed between diamond crystallites which account for the intensity loss, and agree with the Raman intensity measurements. These Raman measurements crystallinity versus amorphous hard-carbon character of thin diamond film.

  7. Studying the effect of hydrogen on diamond growth by adding C10H10Fe under high pressures and high temperatures

    NASA Astrophysics Data System (ADS)

    Fang, Chao; Jia, Xiaopeng; Sun, Shishuai; Yan, Bingmin; Li, Yadong; Chen, Ning; Li, Yong; Ma, Hong-an

    2016-01-01

    In this paper, hydrogen-doped industrial diamonds and gem diamonds were synthesized in the Fe-Ni-C system with C10H10Fe additive, high pressures and high temperatures range of 5.2-6.2 GPa and 1250-1460°C. Experimental results indicate similar effect of hydrogen on these two types of diamonds: with the increasing content of C10H10Fe added in diamond growth environment, temperature is a crucial factor that sensitively affects the hydrogen-doped diamond crystallization. The temperature region for high-quality diamond growth becomes higher and the morphology of diamond crystal changes from cube-octahedral to octahedral. The defects on the {100} surfaces of diamond are more than those on the {111} surfaces. Fourier transform infrared spectroscopy (FTIR) results indicate that the hydrogen atoms enter into the diamond crystal lattice from {100} faces more easily. Most interestingly, under low temperature, nitrogen atoms can also easily enter into the diamond crystal lattice from {100} faces cooperated with hydrogen atoms.

  8. Structure and properties of diamond and diamond-like films

    SciTech Connect

    Clausing, R.E.

    1993-01-01

    This section is broken into four parts: (1) introduction, (2) natural IIa diamond, (3) importance of structure and composition, and (4) control of structure and properties. Conclusions of this discussion are that properties of chemical vapor deposited diamond films can compare favorably with natural diamond, that properties are anisotropic and are a strong function of structure and crystal perfection, that crystal perfection and morphology are functions of growth conditions and can be controlled, and that the manipulation of texture and thereby surface morphology and internal crystal perfection is an important step in optimizing chemically deposited diamond films for applications.

  9. Polymer composites reinforced by locking-in a liquid-crystalline assembly of cellulose nanocrystallites.

    PubMed

    Tatsumi, Mio; Teramoto, Yoshikuni; Nishio, Yoshiyuki

    2012-05-14

    An attempt was made to synthesize novel composites comprising poly(2-hydroxyethyl methacrylate) (PHEMA) and cellulose nanocrystallites (CNC) (acid-treated cotton microfibrils) from suspensions of CNC in an aqueous 2-hydroxyethyl methacrylate (HEMA) monomer solution. The starting suspensions (∼5 wt % CNC) separated into an isotropic upper phase and an anisotropic bottom one in the course of quiescent standing. By way of polymerization of HEMA in different phase situations of the suspensions, we obtained films of three polymer composites, PHEMA-CNC(iso), PHEMA-CNC(aniso), and PHEMA-CNC(mix), coming from the isotropic phase, anisotropic phase, and embryonic nonseparating mixture, respectively. All the composites were transparent and, more or less, birefringent under a polarized optical microscope. A fingerprint texture typical of cholesteric liquid crystals of longer pitch spread widely in PHEMA-CNC(aniso) but rather locally appeared in PHEMA-CNC(iso). Any of the CNC incorporations into the PHEMA matrix improved the original thermal and mechanical properties of this amorphous polymer material. In dynamic mechanical measurements, the locking-in of the respective CNC assemblies gave rise to an increase in the glass-state modulus E' of PHEMA as well as a marked suppression of the E'-falling at temperatures higher than T(g) (≈ 110 °C) of the vinyl polymer. It was also observed for the composites that their modulus E' rerose in a range of about 150-190 °C, which was attributable to a secondary cross-linking formation between PHEMA chains mediated by the acidic CNC filler. The mechanical reinforcement effect of the CNC dispersions was ensured in a tensile test, whereby PHEMA-CNC(aniso) was found to surpass the other two composites in stiffness and strength.

  10. Hydrogen adsorption in the series of carbon nanostructures: Graphenes-graphene nanotubes-nanocrystallites

    NASA Astrophysics Data System (ADS)

    Soldatov, A. P.; Kirichenko, A. N.; Tat'yanin, E. V.

    2016-07-01

    A comparative analysis of hydrogen absorption capability is performed for the first time for three types of carbon nanostructures: graphenes, oriented carbon nanotubes with graphene walls (OCNTGs), and pyrocarbon nanocrystallites (PCNs) synthesized in the pores of TRUMEM ultrafiltration membranes with mean diameters ( D m) of 50 and 90 nm, using methane as the pyrolized gas. The morphology of the carbon nanostructures is studied by means of powder X-ray diffraction, X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, and transmission electron microscopy (TEM). Hydrogen adsorption is investigated via thermogravimetric analysis (TGA) in combination with mass-spectrometry. It is shown that only OCNTGs can adsorb and store hydrogen, the desorption of which under atmospheric pressure occurs at a temperature of around 175°C. Hydrogen adsorption by OCNTGs is quantitatively determined and found to be about 1.5% of their mass. Applying certain assumptions, the relationship between the mass of carbon required for the formation of single-wall OCNTGs in membrane pores and the surface area of pores is established. Numerical factor Ψ = m dep/ m calc, where m dep is the actual mass of carbon deposited upon the formation of OCNTGs and mcalc is the calculated mass of carbon necessary for the formation of OCNTGs is introduced. It is found that the dependence of specific hydrogen adsorption on the magnitude of the factor has a maximum at Ψ = 1.2, and OCNTGs can adsorb and store hydrogen in the interval 0.4 to 0.6 < Ψ < 1.5 to 1.7. Possible mechanisms of hydrogen adsorption and its relationship to the structure of carbon nanoformations are examined.

  11. Genetics Home Reference: Diamond-Blackfan anemia

    MedlinePlus

    ... Understand Genetics Home Health Conditions Diamond-Blackfan anemia Diamond-Blackfan anemia Enable Javascript to view the expand/ ... boxes. Download PDF Open All Close All Description Diamond-Blackfan anemia is a disorder of the bone ...

  12. Genetics Home Reference: Shwachman-Diamond syndrome

    MedlinePlus

    ... Genetics Home Health Conditions Shwachman-Diamond syndrome Shwachman-Diamond syndrome Enable Javascript to view the expand/collapse ... Download PDF Open All Close All Description Shwachman-Diamond syndrome is an inherited condition that affects many ...

  13. Diamond films for laser hardening

    NASA Technical Reports Server (NTRS)

    Albin, S.; Watkins, L.; Ravi, K.; Yokota, S.

    1989-01-01

    Laser-damage experiments were performed on free-standing polycrystalline diamond films prepared by plasma-enhanced CVD. The high laser-induced stress resistance found for this material makes it useful for thin-film coatings for laser optics. Results for diamond-coated silicon substrates demonstrate the enhanced damage threshold imparted by diamond thin-film coatings to materials susceptible to laser damage.

  14. Conversion of fullerenes to diamond

    DOEpatents

    Gruen, Dieter M.

    1994-01-01

    A method of forming synthetic diamond on a substrate. The method involves providing a substrate surface covered with a fullerene or diamond coating, positioning a fullerene in an ionization source, creating a fullerene vapor, ionizing fullerene molecules, accelerating the fullerene ions to energies above 250 eV to form a fullerene ion beam, impinging the fullerene ion beam on the substrate surface and continuing these steps to obtain a diamond film thickness on the substrate.

  15. Conversion of fullerenes to diamond

    DOEpatents

    Gruen, Dieter M.

    1993-01-01

    A method of forming synthetic diamond on a substrate is disclosed. The method involves providing a substrate surface covered with a fullerene or diamond coating, positioning a fullerene in an ionization source, creating a fullerene vapor, ionizing fullerene molecules, accelerating the fullerene ions to energies above 250 eV to form a fullerene ion beam, impinging the fullerene ion beam on the substrate surface and continuing these steps to obtain a diamond thickness on the substrate.

  16. DIAMOND SECONDARY EMITTER

    SciTech Connect

    BEN-ZVI, I.; RAO, T.; BURRILL, A.; CHANG, X.; GRIMES, J.; RANK, J.; SEGALOV, Z.; SMEDLEY, J.

    2005-10-09

    We present the design and experimental progress on the diamond secondary emitter as an electron source for high average power injectors. The design criteria for average currents up to 1 A and charge up to 20 nC are established. Secondary Electron Yield (SEY) exceeding 200 in transmission mode and 50 in emission mode have been measured. Preliminary results on the design and fabrication of the self contained capsule with primary electron source and secondary electron emitter will also be presented.

  17. Diamond Technology Study.

    DTIC Science & Technology

    1979-06-11

    has been conducted into the use of diamond as a TWT helix support material to increase the average output power capability of broadband high frequency...unifilar helix is the one TWT circuit capable of broadband operation with good efficiency, methods to increase jT its power dissipation capability are of...BIBLIOGRAPHY IRa D> AE .,L,-,# ACot .,i n iv 4 I IPT-5413 LIST OF ILLUSTRATIONS Figure No. Title 1 Temperature Differences in a PPM Focused Helix TWT

  18. Diamond turning of glass

    SciTech Connect

    Blackley, W.S.; Scattergood, R.O.

    1988-12-01

    A new research initiative will be undertaken to investigate the critical cutting depth concepts for single point diamond turning of brittle, amorphous materials. Inorganic glasses and a brittle, thermoset polymer (organic glass) are the principal candidate materials. Interrupted cutting tests similar to those done in earlier research are Ge and Si crystals will be made to obtain critical depth values as a function of machining parameters. The results will provide systematic data with which to assess machining performance on glasses and amorphous materials

  19. DIAMOND AMPLIFIER FOR PHOTOCATHODES.

    SciTech Connect

    RAO,T.; BEN-ZVI,I.; BURRILL,A.; CHANG,X.; HULBERT,S.; JOHNSON,P.D.; KEWISCH,J.

    2004-06-21

    We report a new approach to the generation of high-current, high-brightness electron beams. Primary electrons are produced by a photocathode (or other means) and are accelerated to a few thousand electron-volts, then strike a specially prepared diamond window. The large Secondary Electron Yield (SEY) provides a multiplication of the number of electrons by about two orders of magnitude. The secondary electrons drift through the diamond under an electric field and emerge into the accelerating proper of the ''gun'' through a Negative Electron Affinity surface of the diamond. The advantages of the new approach include the following: (1) Reduction of the number of primary electrons by the large SEY, i.e. a very low laser power in a photocathode producing the primaries. (2) Low thermal emittance due to the NEA surface and the rapid thermalization of the electrons. (3) Protection of the cathode from possible contamination from the gun, allowing the use of large quantum efficiency but sensitive cathodes. (4) Protection of the gun from possible contamination by the cathode, allowing the use of superconducting gun cavities. (5) Production of high average currents, up to ampere class. (6) Encapsulated design, making the ''load-lock'' systems unnecessary. This paper presents the criteria that need to be taken into account in designing the amplifier.

  20. Characteristics of Impact Diamonds

    NASA Astrophysics Data System (ADS)

    Skala, R.; Bouska, V. J.

    1992-07-01

    Having studied two Czech diamonds in UV light (lambda=366 nm) they appeared to be an extraordinary dirty orange color [1], the same as in the case of Popigai and ureilites impact diamonds (ID) [2]. SEM images show evidence of a thatch-like surface that is very similar to that of the Abee chondrite [3]. Commonly, the ID contain microscopic black plates which are formed by graphite or a carbon matter with indefinite structure, and they are always associated with hexagonal moissanite [2,4]. One unexplained fact is connected with a fabric of the ID aggregates, i.e. both Czech diamonds are single crystals, otherwise other ID form polycrystalline strongly textured aggregates. [1] Bouska V.J. and Skala R.M. (1992) Abstracts for International Conference on Large Meteorite Impacts and Planetary Evolution, in press. [2] Masaitis V.L., Shafranovskii G.I., Ezerskii V.A., and Reshetnyak N.B. (1990) Meteoritica 49, 180-196. [3] Russell S.S. and Pillinger C.T. (1991) Abstracts 54th Ann. Meet. Meteor. Soc. 200. [4] Bauer J., Fiala J., and Hrichova R. (1963) Amer. Mineral. 48, 620-634.

  1. Ion track doping

    NASA Astrophysics Data System (ADS)

    Fink, D.; Chadderton, L. T.; Cruz, S. A.; Fahrner, W. R.; Hnatowicz, V.; Te Kaat, E. H.; Melnikov, A. A.; Varichenko, V. S.; Zaitsev, A. M.

    1994-10-01

    Longitudinal dopant distribution along ion tracks in soft (polymers [1?5]) and hard (diamond [6,7]) condensed carbonaceous matter have been studied by neutron depth profiling and cathodoluminesence. Both in-diffusion from the aqueous phase and energetic ion implantation were used in primary track doping. In-situ self-decoration of tracks and post-implantation with a secondary ion species were used in the specific case of ion implantation. Radial dopant distributions were also studied by means of a modified tomographic procedure. Decorative doping of ion bombarded solids is useful in probing track structure, and especially in pointing the way to potential development of nanometric-sized electronic devices.

  2. Conversion of fullerenes to diamonds

    DOEpatents

    Gruen, Dieter M.

    1995-01-01

    A method of forming synthetic diamond or diamond-like films on a substrate surface. The method involves the steps of providing a vapor selected from the group of fullerene molecules or an inert gas/fullerene molecule mixture, providing energy to the fullerene molecules consisting of carbon-carbon bonds, the energized fullerene molecules breaking down to form fragments of fullerene molecules including C.sub.2 molecules and depositing the energized fullerene molecules with C.sub.2 fragments onto the substrate with farther fragmentation occurring and forming a thickness of diamond or diamond-like films on the substrate surface.

  3. Diamonds in ophiolites: Contamination or a new diamond growth environment?

    NASA Astrophysics Data System (ADS)

    Howell, D.; Griffin, W. L.; Yang, J.; Gain, S.; Stern, R. A.; Huang, J.-X.; Jacob, D. E.; Xu, X.; Stokes, A. J.; O'Reilly, S. Y.; Pearson, N. J.

    2015-11-01

    For more than 20 years, the reported occurrence of diamonds in the chromites and peridotites of the Luobusa massif in Tibet (a complex described as an ophiolite) has been widely ignored by the diamond research community. This skepticism has persisted because the diamonds are similar in many respects to high-pressure high-temperature (HPHT) synthetic/industrial diamonds (grown from metal solvents), and the finding previously has not been independently replicated. We present a detailed examination of the Luobusa diamonds (recovered from both peridotites and chromitites), including morphology, size, color, impurity characteristics (by infrared spectroscopy), internal growth structures, trace-element patterns, and C and N isotopes. A detailed comparison with synthetic industrial diamonds shows many similarities. Cubo-octahedral morphology, yellow color due to unaggregated nitrogen (C centres only, Type Ib), metal-alloy inclusions and highly negative δ13C values are present in both sets of diamonds. The Tibetan diamonds (n = 3) show an exceptionally large range in δ15N (-5.6 to + 28.7 ‰) within individual crystals, and inconsistent fractionation between {111} and {100} growth sectors. This in contrast to large synthetic HPHT diamonds grown by the temperature gradient method, which have with δ15N = 0 ‰ in {111} sectors and + 30 ‰ in {100} sectors, as reported in the literature. This comparison is limited by the small sample set combined with the fact the diamonds probably grew by different processes. However, the Tibetan diamonds do have generally higher concentrations and different ratios of trace elements; most inclusions are a NiMnCo alloy, but there are also some small REE-rich phases never seen in HPHT synthetics. These characteristics indicate that the Tibetan diamonds grew in contact with a C-saturated Ni-Mn-Co-rich melt in a highly reduced environment. The stable isotopes indicate a major subduction-related contribution to the chemical environment. The

  4. Component analyses of urinary nanocrystallites of uric acid stone formers by combination of high-resolution transmission electron microscopy, fast Fourier transformation, energy dispersive X-ray spectroscopy, X-ray diffraction and Fourier transform infrared spectroscopy.

    PubMed

    Sun, Xin-Yuan; Xue, Jun-Fa; Xia, Zhi-Yue; Ouyang, Jian-Ming

    2015-06-01

    This study aimed to analyse the components of nanocrystallites in urines of patients with uric acid (UA) stones. X-ray diffraction (XRD), Fourier transform infrared spectroscopy, high-resolution transmission electron microscopy (HRTEM), fast Fourier transformation (FFT) of HRTEM, and energy dispersive X-ray spectroscopy (EDS) were performed to analyse the components of these nanocrystallites. XRD and FFT showed that the main component of urinary nanocrystallites was UA, which contains a small amount of calcium oxalate monohydrate and phosphates. EDS showed the characteristic absorption peaks of C, O, Ca and P. The formation of UA stones was closely related to a large number of UA nanocrystallites in urine. A combination of HRTEM, FFT, EDS and XRD analyses could be performed accurately to analyse the components of urinary nanocrystallites.

  5. Diamond Pixel Detectors and 3D Diamond Devices

    NASA Astrophysics Data System (ADS)

    Venturi, N.

    2016-12-01

    Results from detectors of poly-crystalline chemical vapour deposited (pCVD) diamond are presented. These include the first analysis of data of the ATLAS Diamond Beam Monitor (DBM). The DBM module consists of pCVD diamond sensors instrumented with pixellated FE-I4 front-end electronics. Six diamond telescopes, each with three modules, are placed symmetrically around the ATLAS interaction point. The DBM tracking capabilities allow it to discriminate between particles coming from the interaction point and background particles passing through the ATLAS detector. Also, analysis of test beam data of pCVD DBM modules are presented. A new low threshold tuning algorithm based on noise occupancy was developed which increases the DBM module signal to noise ratio significantly. Finally first results from prototypes of a novel detector using pCVD diamond and resistive electrodes in the bulk, forming a 3D diamond device, are discussed. 3D devices based on pCVD diamond were successfully tested with test beams at CERN. The measured charge is compared to that of a strip detector mounted on the same pCVD diamond showing that the 3D device collects significantly more charge than the planar device.

  6. N-type droping of nanocrystalline diamond films with nitrogen and electrodes made therefrom

    DOEpatents

    Gruen, Dieter M.; Krauss, Alan R.; Auciello, Orlando H.; Carlisle, John A.

    2004-09-21

    An electrically conducting n-type ultrananocrystalline diamond (UNCD) having no less than 10.sup.19 atoms/cm.sup.3 of nitrogen is disclosed. A method of making the n-doped UNCD. A method for predictably controlling the conductivity is also disclosed.

  7. Kinetics of hydrothermal crystallization under saturated steam pressure and the self-healing effect by nanocrystallite for hydroxyapatite coatings.

    PubMed

    Yang, Chung-Wei; Lui, Truan-Sheng

    2009-09-01

    Hydroxyapatite coatings (HACs) with a low crystalline state were prepared using the plasma spraying process followed by hermetic autoclaving hydrothermal treatment at 100, 150 and 200 degrees C. Experimental evidence confirmed that the HACs became significantly crystallized and the content of amorphous calcium phosphate decreased by performing the autoclaving hydrothermal treatment in an ambient saturated steam pressure system. The obvious chemisorbed hydroxy groups (OH) peak in the X-ray photoelectron spectra detected from the hydrothermally crystallized HAC specimens means that the hydroxyl-deficient state of plasma-sprayed HACs is significantly improved by the abundant replenished OH groups. The HA nanocrystallite observed from scanning electron microscopy and transmission electron microscopy images within hydrothermally treated HACs is the result of nucleation and grain growth through the replenishment of OH groups into the hydroxyl-deficient HA crystal structure. The microstructural self-healing effect is a result of reduction in defects (pores, microcracks and lamellar boundaries) due to new-growth HA nanocrystallite. According to the systematic derivation of the Arrhenius equation, the HA crystallization is a second-order Arrhenius reaction kinetics. Besides the effects of heating temperature and an atmosphere with abundant water molecules, the saturated steam pressure is a crucial factor which significantly improves the crystallization rate constant and further reduces the activation energy for the hydrothermal HA crystallization.

  8. Preparation and Thermal Stability of Ultrafine Nickel Powders Containing hcp-Ni Nanocrystallites Using Liquid-Phase Reduction Method

    NASA Astrophysics Data System (ADS)

    Xia, Zhimei; Jin, Shengming; Liu, Kun

    2016-10-01

    Ultrafine nickel powders containing hexagonal close-packed nickel (hcp-Ni) nanocrystallites were prepared using liquid-phase reduction with NiC2O4, NaOH, polyvinylpyrrolidone (PVP), and ethylene glycol (EG). The nickel powders were characterized by XRD and SEM. TG analysis was used to determine the thermal stability of ultrafine nickel powders. The results showed that nickel powders with 45.1 pct of hcp-Ni nanocrystallites were synthesized under the following conditions: a reflux time of 3 hours, an NiC2O4-to-EG molar ratio of 0.01, 5 g/L PVP, and 85 g/L NaOH. SEM results illustrated that spherical particles of size 500 nm were obtained. The results of thermal stability showed that the antioxidant property at high temperature was improved with the increase of hcp-Ni content. The oxidation rate of nickel powders with 43.3 pct hcp-Ni was less than 50 pct even if the temperature was up to 873 K (600 °C).

  9. Preparation of TiO2 Nanocrystallite Powders Coated with 9 mol% ZnO for Cosmetic Applications in Sunscreens

    PubMed Central

    Ko, Horng-Huey; Chen, Hui-Ting; Yen, Feng-Ling; Lu, Wan-Chen; Kuo, Chih-Wei; Wang, Moo-Chin

    2012-01-01

    The preparation of TiO2 nanocrystallite powders coated with and without 9 mol% ZnO has been studied for cosmetic applications in sunscreens by a co-precipitation process using TiCl4 and Zn(NO3)2·6H2O as starting materials. XRD results show that the phases of anatase TiO2 and rutile TiO2 coexist for precursor powders without added ZnO (T-0Z) and calcined at 523 to 973 K for 2 h. When the T-0Z precursor powders are calcined at 1273 K for 2 h, only the rutile TiO2 appears. In addition, when the TiO2 precursor powders contain 9 mol% ZnO (T-9Z) are calcined at 873 to 973 K for 2 h, the crystallized samples are composed of the major phase of rutile TiO2 and the minor phases of anatase TiO2 and Zn2Ti3O8. The analyses of UV/VIS/NIR spectra reveal that the absorption of the T-9Z precursor powders after being calcined has a red-shift effect in the UV range with increasing calcination temperature. Therefore, the TiO2 nanocrystallite powders coated with 9 mol% ZnO can be used as the attenuate agent in the UV-A region for cosmetic applications in sunscreens. PMID:22408415

  10. Preparation of TiO₂ nanocrystallite powders coated with 9 mol% ZnO for cosmetic applications in sunscreens.

    PubMed

    Ko, Horng-Huey; Chen, Hui-Ting; Yen, Feng-Ling; Lu, Wan-Chen; Kuo, Chih-Wei; Wang, Moo-Chin

    2012-01-01

    The preparation of TiO(2) nanocrystallite powders coated with and without 9 mol% ZnO has been studied for cosmetic applications in sunscreens by a co-precipitation process using TiCl(4) and Zn(NO(3))(2)·6H(2)O as starting materials. XRD results show that the phases of anatase TiO(2) and rutile TiO(2) coexist for precursor powders without added ZnO (T-0Z) and calcined at 523 to 973 K for 2 h. When the T-0Z precursor powders are calcined at 1273 K for 2 h, only the rutile TiO(2) appears. In addition, when the TiO(2) precursor powders contain 9 mol% ZnO (T-9Z) are calcined at 873 to 973 K for 2 h, the crystallized samples are composed of the major phase of rutile TiO(2) and the minor phases of anatase TiO(2) and Zn(2)Ti(3)O(8). The analyses of UV/VIS/NIR spectra reveal that the absorption of the T-9Z precursor powders after being calcined has a red-shift effect in the UV range with increasing calcination temperature. Therefore, the TiO(2) nanocrystallite powders coated with 9 mol% ZnO can be used as the attenuate agent in the UV-A region for cosmetic applications in sunscreens.

  11. Magnetocaloric effect and evidence of superparamagnetism in GdA l2 nanocrystallites: A magnetic-structural correlation

    NASA Astrophysics Data System (ADS)

    de Paula, V. G.; da Silva, L. M.; dos Santos, A. O.; Lang, R.; Otubo, L.; Coelho, A. A.; Cardoso, L. P.

    2016-03-01

    The correlation between structural and magnetic properties of GdA l2 , focusing on the role played by the disorder in magnetic ordering and how it influences the magnetocaloric effect (MCE) are discussed. Micrometric-sized particles, consisting of nanocrystallites embedded in an amorphous matrix, were prepared by a mechanical milling technique and characterized by means of x-ray diffraction, scanning and high-resolution transmission electron microscopy as well as magnetic measurements as a function of an applied external magnetic field and temperature. The results show that the average particle size is just slightly diminished (≈7%) with the milling time (between 3 and 13 h), whereas the average crystallite size undergoes an expressive reduction (≈43%). For long milling times, structural disorders mostly associated with crystallite size singularly affect the magnetic properties, leading to a large tablelike MCE in the temperature range between 30 and 165 K. Below 30 K, nanocrystallites with dimensions below a given critical size cause an enhancement in the magnetic entropy change related to superparamagnetic behavior. In contrast, for low milling times, relative cooling power values are improved. These striking features along with the small magnetic hysteresis observed make the milled GdA l2 a promising material for application in the magnetic refrigeration technology. Finally, a discussion in an attempt to elucidate the origin of the spin-glass states previously reported in the literature for mechanically milled GdA l2 samples for very long times (400 and 1000 h) is presented.

  12. Photoreductive dehalogenation of halogenated benzene derivatives using ZnS or CdS nanocrystallites as photocatalysts.

    PubMed

    Yin, H; Wada, Y; Kitamura, T; Yanagida, S

    2001-01-01

    ZnS nanocrystallites (nc-ZnS) prepared in N,N-dimethylformamide (DMF) photocatalyze dehalogenation of halogenated benzenes to benzene as the final product from chlorinated benzenes and to difluorobenzenes from fluorinated benzenes in the presence of triethylamine (TEA) as an electron donor under UV light irradiation (lambda > 300 nm). When CdS nanocrystallites (nc-CdS) are used as a photocatalyst (lambda > 400 nm), halogenated benzenes are photoreductively dehalogenated, yielding trichlorobenzene from hexachlorobenzene and tetrafluorobenzene isomers from hexafluorobenzene as the final products. Photoformed electrons on nc-ZnS and nc-CdS have such negative reduction potentials that these electrons reduce polyhalogenated benzenes, leading to the successive dehalogenation. nc-ZnS exhibits higher photocatalytic activitythan nc-CdS due to the more negative potential of the electrons on nc-ZnS than that on nc-CdS. The higher activities of nc-ZnS and nc-CdS compared to their bulk forms are explained as being due to their quantum size effects and the adsorptive interaction between the substrates and the nanosized photocatalysts.

  13. High temperature photoelectron emission and surface photovoltage in semiconducting diamond

    NASA Astrophysics Data System (ADS)

    Williams, G. T.; Cooil, S. P.; Roberts, O. R.; Evans, S.; Langstaff, D. P.; Evans, D. A.

    2014-08-01

    A non-equilibrium photovoltage is generated in semiconducting diamond at above-ambient temperatures during x-ray and UV illumination that is sensitive to surface conductivity. The H-termination of a moderately doped p-type diamond (111) surface sustains a surface photovoltage up to 700 K, while the clean (2 × 1) reconstructed surface is not as severely affected. The flat-band C 1s binding energy is determined from 300 K measurement to be 283.87 eV. The true value for the H-terminated surface, determined from high temperature measurement, is (285.2 ± 0.1) eV, corresponding to a valence band maximum lying 1.6 eV below the Fermi level. This is similar to that of the reconstructed (2 × 1) surface, although this surface shows a wider spread of binding energy between 285.2 and 285.4 eV. Photovoltage quantification and correction are enabled by real-time photoelectron spectroscopy applied during annealing cycles between 300 K and 1200 K. A model is presented that accounts for the measured surface photovoltage in terms of a temperature-dependent resistance. A large, high-temperature photovoltage that is sensitive to surface conductivity and photon flux suggests a new way to use moderately B-doped diamond in voltage-based sensing devices.

  14. Topomineralogy of the Siberian diamonds

    NASA Astrophysics Data System (ADS)

    Afanasyev, Valentin; Lobanov, Sergey; Vasiliy, Koptil; Bogdan, Pomazanskiy; Alexander, Gerasimchuk; Nikolay, Pokhilenko

    2010-05-01

    Diamond placers are widespread in the modern alluvial deposits and ancient sedimentary collectors of the Siberian craton and can be divided into two major types: 1) related with the rich and famous kimberlites such as Mir and International pipe and 2) with unidentified root source. The lattert are wide spread, industrially significant and in use in the north-east of the Siberian craton. Yet, kimberlites known in the north-east of the Siberian craton have poor diamond concentrations or non-diamondiferous at all. A contradiction occur between high alluvial and extremely-low host diamond content of this region. Detailed studies of this problem led to the fact that diamonds from the alluvial deposits of the Siberian craton, as well as other diamondiferous regions, show broader spectrum of typomorphic features than diamonds from the known kimberlites. Moreover, some diamond groups are not typical for the phanerozoic kimberlites of Siberia, or do not occur in significant amounts. The foregoing suggests that diamonds from the unknown host rock type occur in the diamond placers of the Siberian craton along with typical kimberlite diamonds. Based on the detailed studies of the typomorphic features of the alluvial diamonds from Siberian craton 5 parasteresis groups, probably related to different host rock types, were distinguished. Parasteresis is a regular spatial mineral association which are united by single geological process, such as kimberlite indicator minerals and diamonds from kimberlites which differ in genesis but united by the whole kimberlitic process. Parasteresis 1 (kimberlite-type) involves diamonds which are common for the phanerozoic kimberlites. Parasteresis 2 (supposed to be lamproitic) includes roundish (cryptolaminar) diamonds of dodecahedron habit, the so called "brazilian" or "ural" types. In Siberian phanerozoic industrial kimberlites the part of such diamonds does not exceed 15%. That is the diamonds which dominate in the placers of the Urals and

  15. Twin Quintuplets in CVD Diamond

    DTIC Science & Technology

    1992-08-26

    microscopy (HRTEM). We conclude that the twin quintuplets have two main morphologies. The first consists of four Sigma = 3 twin boundaries and one...slightly more than the 70.53 deg tilt of a Sigma = 3 boundary. These grain boundaries and the conventional diamond lattice twin boundaries are the only types of boundaries that we have observed in CVD diamond.

  16. Gardner-Diamond syndrome.

    PubMed

    Park, Joyce H; Yagerman, Sarah; Feng, Hao; Kim, Randie H; Meehan, Shane A; Lewin, Jesse

    2016-12-15

    Gardner-Diamond syndrome, which also is knownas autoerythrocyte sensitization disorder, is a raresyndrome of inflammatory, edematous papulesthat evolve into painful ecchymoses on the trunkand lower legs after a period of stress with no priorhistory of trauma. This syndrome usually occurs inwomen with a history of psychiatric disorders, themost common one being depression. Although theexact mechanism of injury is not well understood,it is hypothesized that these patients haveautoantibodies to phosphatidylserine, which is aphospholipid membrane component in erythrocytes.Treatment for this disorder includes symptomatictherapies and psychotropic medications to treat theunderlying psychiatric disorder.

  17. Diamond Anvil Cell Techniques

    NASA Astrophysics Data System (ADS)

    Piermarini, Gasper J.

    It has often been said that scientific advances are made either in a dramatic and revolutionary way, or, as in the case of the diamond anvil cell (DAC), in a slow and evolutionary manner over a period of several years. For more than 2 decades, commencing in 1958, the DAC developed stepwise from a rather crude qualitative instrument to the sophisticated quantitative research tool it is today, capable of routinely producing sustained static pressures in the multi-megabar range and readily adaptable to numerous scientific measurement techniques because of its optical accessibility, miniature size, and portability.

  18. Electrical stimulation of retinal ganglion cells with diamond and the development of an all diamond retinal prosthesis.

    PubMed

    Hadjinicolaou, Alex E; Leung, Ronald T; Garrett, David J; Ganesan, Kumaravelu; Fox, Kate; Nayagam, David A X; Shivdasani, Mohit N; Meffin, Hamish; Ibbotson, Michael R; Prawer, Steven; O'Brien, Brendan J

    2012-08-01

    Electronic retinal implants for the blind are already a market reality. A world wide effort is underway to find the technology that offers the best combination of performance and safety for potential patients. Our approach is to construct an epi-retinally targeted device entirely encapsulated in diamond to maximise longevity and biocompatibility. The stimulating array of our device comprises a monolith of electrically insulating diamond with thousands of hermetic, microscale nitrogen doped ultra-nanocrystalline diamond (N-UNCD) feedthroughs. Here we seek to establish whether the conducting diamond feedthroughs of the array can be used as stimulating electrodes without further modification with a more traditional neural stimulation material. Efficacious stimulation of retinal ganglion cells was established using single N-UNCD microelectrodes in contact with perfused, explanted, rat retina. Evoked rat retinal ganglion cell action potentials were recorded by patch clamp recording from single ganglion cells, adjacent to the N-UNCD stimulating electrode. Separately, excellent electrochemical stability of N-UNCD was established by prolonged pulsing in phosphate buffered saline at increasing charge density up to the measured charge injection limit for the material.

  19. Photochemical functionalization of diamond surfaces

    NASA Astrophysics Data System (ADS)

    Nichols, Beth Marie

    Diamond surfaces are excellent substrates for potential applications in fields such as biotechnology, molecular sensing, and molecular electronics. In order to develop new diamond-based technologies, it is important to develop a fundamental understanding of diamond surface chemistry. Previous work in the Hamers group has demonstrated covalent functionalization of hydrogen-terminated diamond surfaces with molecules bearing a terminal vinyl group via a photochemical process using sub-bandgap light at 254 nm. While the reaction was shown to occur reproducibly with self-terminating monolayer surface coverage, the mechanism was never fully understood. This thesis investigates the photochemical modification of hydrogen-terminated surfaces of diamond. The results show that this reaction is a surface-mediated radical process initiated by the UV-assisted photoejection of electrons from the diamond surfaces into the liquid phase. To develop a better understanding of the photochemical mechanism, an electrical bias was applied to the diamond samples during the photochemical reaction. Applying a 1 volt potential between two diamond electrodes significantly increases the rate of functionalization of the negative electrode. Cyclic voltammetry and electrochemical impedance measurements show that the applied potential induces downward band-bending within the negative diamond film electrode. At higher voltages a Faradaic current is observed, with no further acceleration of the functionalization rate. The bias-dependent changes in rate are attributed to a field effect; the applied potential induces a downward band-bending on the negative electrode and facilitates electron ejection into the adjacent organic fluid. The ability to directly organically photopattern the surface on length scales of <25 microns has also been demonstrated using simple photomasking techniques. Techniques for the functionalization of diamond may be applied to other 'unreactive' surfaces. The activation of a

  20. Electron energy loss spectrometry of interstellar diamonds

    NASA Technical Reports Server (NTRS)

    Bernatowicz, Thomas J.; Gibbons, Patrick C.; Lewis, Roy S.

    1990-01-01

    The results are reported of electron energy loss spectra (EELS) measurements on diamond residues from carbonaceous meteorites designed to elucidate the structure and composition of interstellar diamonds. Dynamic effective medium theory is used to model the dielectric properties of the diamonds and in particular to synthesize the observed spectra as mixtures of diamond and various pi-bonded carbons. The results are shown to be quantitatively consistent with the idea that diamonds and their surfaces are the only contributors to the electron energy loss spectra of the diamond residues and that these peculiar spectra are the result of the exceptionally small grain size and large specific surface area of the interstellar diamonds.

  1. Chemical-Vapor-Deposited Diamond Film

    NASA Technical Reports Server (NTRS)

    Miyoshi, Kazuhisa

    1999-01-01

    This chapter describes the nature of clean and contaminated diamond surfaces, Chemical-vapor-deposited (CVD) diamond film deposition technology, analytical techniques and the results of research on CVD diamond films, and the general properties of CVD diamond films. Further, it describes the friction and wear properties of CVD diamond films in the atmosphere, in a controlled nitrogen environment, and in an ultra-high-vacuum environment.

  2. Detonation nanodiamonds for doping Kevlar.

    PubMed

    Comet, Marc; Pichot, Vincent; Siegert, Benny; Britz, Fabienne; Spitzer, Denis

    2010-07-01

    This paper reports on the first attempt to enclose diamond nanoparticles--produced by detonation--into a Kevlar matrix. A nanocomposite material (40 wt% diamond) was prepared by precipitation from an acidic solution of Kevlar containing dispersed nanodiamonds. In this material, the diamond nanoparticles (Ø = 4 nm) are entirely wrapped in a Kevlar layer about 1 nm thick. In order to understand the interactions between the nanodiamond surface and the polymer, the oxygenated surface functional groups of nanodiamond were identified and titrated by Boehm's method which revealed the exclusive presence of carboxyl groups (0.85 sites per nm2). The hydrogen interactions between these groups and the amide groups of Kevlar destroy the "rod-like" structure and the classical three-dimensional organization of this polymer. The distortion of Kevlar macromolecules allows the wrapping of nanodiamonds and leads to submicrometric assemblies, giving a cauliflower structure reminding a fractal object. Due to this structure, the macroscopic hardness of Kevlar doped by nanodiamonds (1.03 GPa) is smaller than the one of pure Kevlar (2.31 GPa). To our knowledge, this result is the first illustration of the change of the mechanical properties induced by doping the Kevlar with nanoparticles.

  3. Tailoring nanocrystalline diamond film properties

    DOEpatents

    Gruen, Dieter M.; McCauley, Thomas G.; Zhou, Dan; Krauss, Alan R.

    2003-07-15

    A method for controlling the crystallite size and growth rate of plasma-deposited diamond films. A plasma is established at a pressure in excess of about 55 Torr with controlled concentrations of hydrogen up to about 98% by volume, of unsubstituted hydrocarbons up to about 3% by volume and an inert gas of one or more of the noble gases and nitrogen up to about 98% by volume. The volume ratio of inert gas to hydrogen is preferably maintained at greater than about 4, to deposit a diamond film on a suitable substrate. The diamond film is deposited with a predetermined crystallite size and at a predetermined growth rate.

  4. Conversion of fullerenes to diamond

    DOEpatents

    Gruen, Dieter M.

    1994-01-01

    A method of forming synthetic hydrogen defect free diamond or diamond like films on a substrate. The method involves providing vapor containing fullerene molecules with or without an inert gas, providing a device to impart energy to the fullerene molecules, fragmenting at least in part some of the fullerene molecules in the vapor or energizing the molecules to incipient fragmentation, ionizing the fullerene molecules, impinging ionized fullerene molecules on the substrate to assist in causing fullerene fragmentation to obtain a thickness of diamond on the substrate.

  5. CVD Diamond Dielectric Accelerating Structures

    SciTech Connect

    Schoessow, P.; Kanareykin, A.; Gat, R.

    2009-01-22

    The electrical and mechanical properties of diamond make it an ideal candidate material for use in dielectric accelerating structures: high RF breakdown field, extremely low dielectric losses and the highest available thermoconductive coefficient. Using chemical vapor deposition (CVD) cylindrical diamond structures have been manufactured with dimensions corresponding to fundamental TM{sub 01} mode frequencies in the GHz to THz range. Surface treatments are being developed to reduce the secondary electron emission (SEE) coefficient below unity to reduce the possibility of multipactor. The diamond CVD cylindrical waveguide technology developed here can be applied to a variety of other high frequency, large-signal applications.

  6. CVD diamond metallization and characterization

    NASA Astrophysics Data System (ADS)

    Fraimovitch, D.; Adelberd, A.; Marunko, S.; Lefeuvre, G.; Ruzin, A.

    2017-02-01

    In this study we compared three diamond substrate grades: polycrystalline, optical grade single crystal, and electronic grade single crystal for detector application. Beside the bulk type, the choice of contact material, pre-treatment, and sputtering process details have shown to alter significantly the diamond detector performance. Characterization of diamond substrate permittivity and losses indicate grade and crystallinity related, characteristic differences for frequencies in 1 kHz-1 MHz range. Substantial grade related variations were also observed in surface electrostatic characterization performed by contact potential difference (CPD) mode of an atomic force microscope. Study of conductivity variations with temperature reveal that bulk trap energy levels are also dependent on the crystal grade.

  7. Plasmon resonance enhanced temperature-dependent photoluminescence of Si-V centers in diamond

    SciTech Connect

    Cheng, Shaoheng; Song, Jie; Wang, Qiliang; Liu, Junsong; Li, Hongdong; Zhang, Baolin

    2015-11-23

    Temperature dependent optical property of diamond has been considered as a very important factor for realizing high performance diamond-based optoelectronic devices. The photoluminescence feature of the zero phonon line of silicon-vacancy (Si-V) centers in Si-doped chemical vapor deposited single crystal diamond (SCD) with localized surface plasmon resonance (LSPR) induced by gold nanoparticles has been studied at temperatures ranging from liquid nitrogen temperature to 473 K, as compared with that of the SCD counterpart in absence of the LSPR. It is found that with LSPR the emission intensities of Si-V centers are significantly enhanced by factors of tens and the magnitudes of the redshift (width) of the emissions become smaller (narrower), in comparison with those of normal emissions without plasmon resonance. More interestingly, these strong Si-V emissions appear remarkably at temperatures up to 473 K, while the spectral feature was not reported in previous studies on the intrinsic Si-doped diamonds when temperatures are higher than room temperature. These findings would lead to reaching high performance diamond-based devices, such as single photon emitter, quantum cryptography, biomarker, and so forth, working under high temperature conditions.

  8. All-Diamond Microelectrodes as Solid State Probes for Localized Electrochemical Sensing.

    PubMed

    Silva, Eduardo L; Gouvêa, Cristol P; Quevedo, Marcela C; Neto, Miguel A; Archanjo, Braulio S; Fernandes, António J S; Achete, Carlos A; Silva, Rui F; Zheludkevich, Mikhail L; Oliveira, Filipe J

    2015-07-07

    The fabrication of an all-diamond microprobe is demonstrated for the first time. This ME (microelectrode) assembly consists of an inner boron doped diamond (BDD) layer and an outer undoped diamond layer. Both layers were grown on a sharp tungsten tip by chemical vapor deposition (CVD) in a stepwise manner within a single deposition run. BDD is a material with proven potential as an electrochemical sensor. Undoped CVD diamond is an insulating material with superior chemical stability in comparison to conventional insulators. Focused ion beam (FIB) cutting of the apex of the ME was used to expose an electroactive BDD disk. By cyclic voltammetry, the redox reaction of ferrocenemethanol was shown to take place at the BDD microdisk surface. In order to ensure that the outer layer was nonelectrically conductive, a diffusion barrier for boron atoms was established seeking the formation of boron-hydrogen complexes at the interface between the doped and the undoped diamond layers. The applicability of the microelectrodes in localized corrosion was demonstrated by scanning amperometric measurements of oxygen distribution above an Al-Cu-CFRP (Carbon Fiber Reinforced Polymer) galvanic corrosion cell.

  9. Wettability of ultrananocrystalline diamond and graphite nanowalls films: a comparison with their single crystal analogs.

    PubMed

    Ostrovskaya, L Y u; Ralchenko, V G; Bolshakov, A P; Saveliev, A V; Dzbanovsky, N N; Shmegera, S V

    2009-06-01

    Dramatic changes in wettability of diamond and graphite are observed when these materials are prepared in nanostructured forms--undoped and nitrogen-doped ultrananocrystalline diamond (UNCD) films, and graphite nanowalls (GNW), respectively. The nanostructured carbon films were deposited on Si by microwave plasma CVD processes. The advancing contact angle theta for water on hydrogenated undoped UNCD films increases to 106 +/- 3 degrees compared to hydrogenated single crystal diamond (theta = 92 degrees). Nitrogen doping (N2 addition to plasma) during UNCD growth makes the film more hydrophilic. The GNW films exhibited superhydrophobic behavior with theta = 144 +/- 3 degrees for water, which is higher than the contact angle of monocrystalline graphite (the basal plane) by a factor of 1.8. No chemical surface treatment is necessary to achieve such high hydrophobicity, it is accomplished solely by a specific (nanoporous, high aspect ratio) surface morphology with very low free surface energy inherent in it. The wetting behaviour of nanostructured films can be described with the Cassie-Baxter equation for heterophase nanoporous surfaces. Oxidation and hydrogenation of UNCD films make it possible to control theta over a much wider range as compared to a single crystal diamond. The influence of diamond grain size on wetting is considered taking into account the surface treatment. The corresponding variation in surface energy has been determined by the modified Young's equation.

  10. Mn-Doping in NiO Nanoparticles: Defects-Modifications and Associated Effects Investigated Through Positron Annihilation Spectroscopy.

    PubMed

    Das, Anjan; Mandal, Atis Chandra; Roy, Soma; Nambissan, P M G

    2016-04-01

    Manganese-doped nickel oxide (Ni1-xMnxO) nanoparticulate samples with x in the range 0 (undoped sample) to 0.35 were synthesized by sol-gel method involving chemical reactions between the solutions of nickel nitrate hexahydrate and manganese acetate tetrahydrate. The nanocrystallites obtained after annealing of the precipitates for different durations were characterized by X-ray diffraction and high resolution transmission electron microscopy. The samples showed high degree of purity with no secondary phase up to 35 at.% (x = 0.35) of Mn-doping. At the initial doping concentrations, the crystallite sizes increased due to vacancy type defects being recombined with some of the doped Mn2+ ions. However, substitution-induced strain soon overtook the crystallite dynamics and the sizes rapidly started reducing again as an indirect consequence of the necessity to accommodate majority of the doped cations on the surfaces of the nanocrystallites. There was conspicuous changes in the lattice parameter too which could again be attributed to the strain and charge effects. The average sizes of the crystallites were obtained in the range 5.5 nm to 13.1 nm for the different samples. UV-Vis absorption studies indicated the formation of excitonic states in NiO on Mn-doping. The band gap energy (Eg) derived from the optical absorption spectra showed a continuous increase with increase of Mn-doping of the samples. Positron lifetime and Doppler broadening spectroscopic studies were carried out on those samples to characterize the vacancy type defects and defect clusters/complexes. There were also indications to suggest positron annihilation at the crystallite surfaces owing to their sizes of nanometer order. Positron lifetimes decreased upon increase of Mn-doping. The coincidence Doppler broadened ratio curves indicated definite shifts of the prominent oxygen-electron-annihilation peak and the variation of the lineshape parameter S also indicated clearly the effects of Mn-doping.

  11. Fabrication of amorphous diamond films

    DOEpatents

    Falabella, S.

    1995-12-12

    Amorphous diamond films having a significant reduction in intrinsic stress are prepared by biasing a substrate to be coated and depositing carbon ions thereon under controlled temperature conditions. 1 fig.

  12. Method of dehalogenation using diamonds

    DOEpatents

    Farcasiu, Malvina; Kaufman, Phillip B.; Ladner, Edward P.; Anderson, Richard R.

    2000-01-01

    A method for preparing olefins and halogenated olefins is provided comprising contacting halogenated compounds with diamonds for a sufficient time and at a sufficient temperature to convert the halogenated compounds to olefins and halogenated olefins via elimination reactions.

  13. Adsorptive Separation and Sequestration of Krypton, I and C14 on Diamond Nanoparticles

    SciTech Connect

    Ghosh, Tushar; Loyalka, Sudarsha; Prelas, Mark; Viswanath, Dabir

    2015-03-31

    The objective of this research proposal was to address the separation and sequestration of Kr and I from each other using nano-sized diamond particles and retaining these in diamond until they decay to the background level or can be used as a byproduct. Following removal of Kr and I, an adsorbent will be used to adsorb and store CO2 from the CO2 rich stream. A Field Enhanced Diffusion with Optical Activation (FEDOA-a large scale process that takes advantage of thermal, electrical, and optical activation to enhance the diffusion of an element into diamond structure) was used to load Kr and I on micron or nano sized particles having a larger relative surface area. The diamond particles can be further increased by doping it with boron followed by irradiation in a neutron flux. Previous studies showed that the hydrogen storage capacity could be increased significantly by using boron-doped irradiated diamond particles. Diamond powders were irradiated for a longer time by placing them in a quartz tube. The surface area was measured using a Quantachrome Autosorb system. No significant increase in the surface area was observed. Total surface area was about 1.7 m2/g. This suggests the existence of very minimal pores. Interestingly it showed hysteresis upon desorption. A reason for this may be strong interaction between the surface and the nitrogen molecules. Adsorption runs at higher temperatures did not show any adsorption of krypton on diamond. Use of a GC with HID detector to determine the adsorption capacity from the breakthrough curves was attempted, but experimental difficulties were encountered.

  14. Photo-stimulated low electron temperature high current diamond film field emission cathode

    DOEpatents

    Shurter,; Roger Philips, Devlin [Los Alamos, NM; David James, Moody [Santa Fe, NM; Nathan Andrew, Taccetti [Los Alamos, NM; Jose Martin, Russell [Santa Fe, NM; John, Steven [Los Alamos, NM

    2012-07-24

    An electron source includes a back contact surface having a means for attaching a power source to the back contact surface. The electron source also includes a layer comprising platinum in direct contact with the back contact surface, a composite layer of single-walled carbon nanotubes embedded in platinum in direct contact with the layer comprising platinum. The electron source also includes a nanocrystalline diamond layer in direct contact with the composite layer. The nanocrystalline diamond layer is doped with boron. A portion of the back contact surface is removed to reveal the underlying platinum. The electron source is contained in an evacuable container.

  15. Diamond surface functionalization with biomimicry - Amine surface tether and thiol moiety for electrochemical sensors

    NASA Astrophysics Data System (ADS)

    Sund, James B.; Causey, Corey P.; Wolter, Scott D.; Parker, Charles B.; Stoner, Brian R.; Toone, Eric J.; Glass, Jeffrey T.

    2014-05-01

    The surface of conducting diamond was functionalized with a terminal thiol group that is capable of binding and detecting nitrogen-oxygen species. The functionalization process employed multiple steps starting with doped diamond films grown by plasma enhanced chemical vapor deposition followed by hydrogen termination and photochemical attachment of a chemically protected amine alkene. The surface tether was deprotected to reveal the amine functionality, which enabled the tether to be extended with surface chemistry to add a terminal thiol moiety for electrochemical sensing applications. Each step of the process was validated using X-ray photoelectron spectroscopy analysis.

  16. Mo2C coating on diamond: Different effects on thermal conductivity of diamond/Al and diamond/Cu composites

    NASA Astrophysics Data System (ADS)

    Ma, Songdi; Zhao, Naiqin; Shi, Chunsheng; Liu, Enzuo; He, Chunnian; He, Fang; Ma, Liying

    2017-04-01

    Mo2C submicron layer coated diamond particles prepared by a molten salts route with Mo powder as the starting material were used as the filler in Cu- and Al- matrix composites. The microstructure and thermal property of the composites prepared by a vacuum pressure infiltration method were investigated. When introducing a 500 nm thick Mo2C layer, the thermal conductivity of the composites with different matrix presented different performance. A high thermal conductivity (657 W m-1 K-1) was obtained in diamond/Cu composites owing to the improved interfacial bonding and lower interfacial thermal resistance, while the thermal conductivity of diamond/Al composites decreased from 553 W m-1 K-1 to 218 W m-1 K-1 when introducing the Mo2C layer, which can be attributed to the formation of harmful granule-phase (Al12Mo) at the interface of diamond and aluminum. This work provides a promising approach to improve performance of diamond reinforced metal matrix composites by selecting carbide as an interface modifier.

  17. A procedure for diamond turning KDP crystals

    SciTech Connect

    Montesanti, R.C.; Thompson, S.L.

    1995-07-07

    A procedure and the equipment necessary for single-point diamond flycutting (loosely referred to as diamond turning) potassium di-hydrogen phosphate (KDP) crystals are described. It is based on current KDP diamond turning activities at the Lawrence Livermore National Laboratory (LLNL), drawing upon knowledge from the Nova crystal finishing development during the 1980`s and incorporating refinements from our efforts during 1995. In addition to describing a step-by-step process for diamond turning KDP, specific discussions are included on the necessary diamond tool geometry and edge sharpness, cutting fluid, and crystal preparation, handling, cleaning, and inspection. The authors presuppose that the reader is already familiar with diamond turning practices.

  18. Diamonds: Exploration, mines and marketing

    NASA Astrophysics Data System (ADS)

    Read, George H.; Janse, A. J. A. (Bram)

    2009-11-01

    The beauty, value and mystique of exceptional quality diamonds such as the 603 carat Lesotho Promise, recovered from the Letseng Mine in 2006, help to drive a multi-billion dollar diamond exploration, mining and marketing industry that operates in some 45 countries across the globe. Five countries, Botswana, Russia, Canada, South Africa and Angola account for 83% by value and 65% by weight of annual diamond production, which is mainly produced by four major companies, De Beers, Alrosa, Rio Tinto and BHP Billiton (BHPB), which together account for 78% by value and 72% by weight of annual diamond production for 2007. During the last twelve years 16 new diamond mines commenced production and 4 re-opened. In addition, 11 projects are in advanced evaluation and may begin operations within the next five years. Exploration for diamondiferous kimberlites was still energetic up to the last quarter of 2008 with most work carried out in Canada, Angola, Democratic Republic of the Congo (DRC) and Botswana. Many kimberlites were discovered but no new economic deposits were outlined as a result of this work, except for the discovery and possible development of the Bunder project by Rio Tinto in India. Exploration methods have benefitted greatly from improved techniques of high resolution geophysical aerial surveying, new research into the geochemistry of indicator minerals and further insights into the formation of diamonds and the relation to tectonic/structural events in the crust and mantle. Recent trends in diamond marketing indicate that prices for rough diamonds and polished goods were still rising up to the last quarter of 2008 and subsequently abruptly sank in line with the worldwide financial crisis. Most analysts predict that prices will rise again in the long term as the gap between supply and demand will widen because no new economic diamond discoveries have been made recently. The disparity between high rough and polished prices and low share prices of publicly

  19. Highly-focused boron implantation in diamond and imaging using the nuclear reaction 11B(p, α)8Be

    NASA Astrophysics Data System (ADS)

    Ynsa, M. D.; Ramos, M. A.; Skukan, N.; Torres-Costa, V.; Jakšić, M.

    2015-04-01

    Diamond is an especially attractive material because of its gemological value as well as its unique mechanical, chemical and physical properties. One of these properties is that boron-doped diamond is an electrically p-type semiconducting material at practically any boron concentration. This property makes it possible to use diamonds for multiple industrial and technological applications. Boron can be incorporated into pure diamond by different techniques including ion implantation. Although typical energies used to dope diamond by ion implantation are about 100 keV, implantations have also been performed with energies above MeV. In this work CMAM microbeam setup has been used to demonstrate capability to implant boron with high energies. An 8 MeV boron beam with a size of about 5 × 3 μm2 and a beam current higher than 500 pA has been employed while controlling the beam position and fluence at all irradiated areas. The subsequent mapping of the implanted boron in diamond has been obtained using the strong and broad nuclear reaction 11B(p, α)8Be at Ep = 660 keV. This reaction has a high Q-value (8.59 MeV for α0 and 5.68 MeV for α1) and thus is almost interference-free. The sensitivity of the technique is studied in this work.

  20. High temperature diamond film deposition on a natural diamond anvil

    SciTech Connect

    McCauley, T.S.; Vohra, Y.K.

    1995-12-31

    We report on the growth and characterization of a 100 {mu}m thick by 350 {mu}m diameter diamond layer on the culet of a type Ia brilliant cut natural diamond anvil by microwave plasma-assisted CVD (MPCVD). While our previous work [1] on diamond anvils resulted in homoepitaxial film growth at a rate of approximately 20 {mu}m/hr, the present 100 {mu}m thick diamond layer grew in less than 2 hours. This unprecedented growth rate of {approximately} 50 {mu}m/hr is believed to be the result of the extremely high substrate temperature (1800{degrees}-2100{degrees}C) during deposition. The translucent diamond layer was characterized by micro-Raman, low temperature photoluminescence (PL) and PL excitation spectroscopy, as well as atomic force microscopy (AFM). Raman analysis shows the deposit to be of high quality. The PL spectra show numerous features, including prominent emission bands at 575 nm (2.16 eV), 636 nm (1.95 eV), 735 nm (1.68 eV) and 777 run, (1.60 eV).

  1. Single crystal CVD diamond membranes for betavoltaic cells

    NASA Astrophysics Data System (ADS)

    Delfaure, C.; Pomorski, M.; de Sanoit, J.; Bergonzo, P.; Saada, S.

    2016-06-01

    A single crystal diamond large area thin membrane was assembled as a p-doped/Intrinsic/Metal (PIM) structure and used in a betavoltaic configuration. When tested with a 20 keV electron beam from a high resolution scanning electron microscope, we measured an open circuit voltage (Voc) of 1.85 V, a charge collection efficiency (CCE) of 98%, a fill-factor of 80%, and a total conversion efficiency of 9.4%. These parameters are inherently linked to the diamond membrane PIM structure that allows full device depletion even at 0 V and are among the highest reported up to now for any other material tested for betavoltaic devices. It enables to drive a high short-circuit current Isc up to 7.12 μA, to reach a maximum power Pmax of 10.48 μW, a remarkable value demonstrating the high-benefit of diamond for the realization of long-life radioisotope based micro-batteries.

  2. Tiny radio is based on diamond effects

    NASA Astrophysics Data System (ADS)

    2017-02-01

    You could soon be tuning into “Diamond FM”, thanks to a new radio receiver based on atomic-scale defects in diamond, unveiled by physicists at Harvard University in the US and Element Six in the UK.

  3. Diamond radiation detectors I. Detector properties for IIa diamond

    SciTech Connect

    Kania, D.R.

    1997-05-16

    The detector properties and carrier dynamics of type IIa diamonds are reasonably well understood. The trends in the electron and hole mobilities have been characterized as a function of temperature, impurity content, electric field and carrier density. The carrier lifetimes are coupled through the nitrogen impurity. This leaves us with typical samples with collection distances of 20 to 50 micrometers. The detailed dynamics of the carriers can be modeled using a rate equation analysis. Much progress has been made in understanding the detector properties of diamond, but continued progress has been limited by the geologic processes used to make the material, for example sample size and no synthesis control. CVD diamond promises to eliminate these restrictions.

  4. INVESTIGATION OF ZrxLa1-xOy NANOCRYSTALLITES IN METAL-HIGH-k OXIDE-SILICON-TYPE NONVOLATILE MEMORY DEVICES

    NASA Astrophysics Data System (ADS)

    Bahari, Ali; Gholipur, Reza

    2012-12-01

    To investigate characterization of ZrxLa1-xOy nanocrystallites as a buffer oxide in forming the metal-oxide-semiconductor field effect transistors (MOSFETs) structure, we synthesized ZrxLa1-xOy nanocrystallites by sol-gel method. Moreover, from the solution prepared, thin films on silicon wafer substrates have been realized by "dip-coating" with a pulling out speed of 5 cm min-1. The structure, morphology, electrical properties of thin film was examined by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM) and transmission electron microscopy (TEM) techniques. Electrical property characterization was performed with metal-oxide-semiconductor (MOS) structures through capacitance-voltage (C-V) and current density-voltage (J-V) measurements. The leakage current density was below 1.0 ×10-6A/cm2 at 1 MV/cm.

  5. Ohmic contacts to semiconducting diamond

    NASA Astrophysics Data System (ADS)

    Zeidler, James R.; Taylor, M. J.; Zeisse, Carl R.; Hewett, C. A.; Delahoussaye, Paul R.

    1990-10-01

    Work was carried out to improve the electron beam evaporation system in order to achieve better deposited films. The basic system is an ion pumped vacuum chamber, with a three-hearth, single-gun e-beam evaporator. Four improvements were made to the system. The system was thoroughly cleaned and new ion pump elements, an e-gun beam adjust unit, and a more accurate crystal monitor were installed. The system now has a base pressure of 3 X 10(exp -9) Torr, and can easily deposit high-melting-temperature metals such as Ta with an accurately controlled thickness. Improved shadow masks were also fabricated for better alignment and control of corner contacts for electrical transport measurements. Appendices include: A Thermally Activated Solid State Reaction Process for Fabricating Ohmic Contacts to Semiconducting Diamond; Tantalum Ohmic Contacts to Diamond by a Solid State Reaction Process; Metallization of Semiconducting Diamond: Mo, Mo/Au, and Mo/Ni/Au; Specific Contact Resistance Measurements of Ohmic Contracts to Diamond; and Electrical Activation of Boron Implanted into Diamond.

  6. Organophosphonate biofunctionalization of diamond electrodes.

    PubMed

    Caterino, R; Csiki, R; Wiesinger, M; Sachsenhauser, M; Stutzmann, M; Garrido, J A; Cattani-Scholz, A; Speranza, Giorgio; Janssens, S D; Haenen, K

    2014-08-27

    The modification of the diamond surface with organic molecules is a crucial aspect to be considered for any bioapplication of this material. There is great interest in broadening the range of linker molecules that can be covalently bound to the diamond surface. In the case of protein immobilization, the hydropathicity of the surface has a major influence on the protein conformation and, thus, on the functionality of proteins immobilized at surfaces. For electrochemical applications, particular attention has to be devoted to avoid that the charge transfer between the electrode and the redox center embedded in the protein is hindered by a thick insulating linker layer. This paper reports on the grafting of 6-phosphonohexanoic acid on OH-terminated diamond surfaces, serving as linkers to tether electroactive proteins onto diamond surfaces. X-ray photoelectron spectroscopy (XPS) confirms the formation of a stable layer on the surface. The charge transfer between electroactive molecules and the substrate is studied by electrochemical characterization of the redox activity of aminomethylferrocene and cytochrome c covalently bound to the substrate through this linker. Our work demonstrates that OH-terminated diamond functionalized with 6-phosphonohexanoic acid is a suitable platform to interface redox-proteins, which are fundamental building blocks for many bioelectronics applications.

  7. Use of Diamond as an Optical Material

    DTIC Science & Technology

    1991-09-27

    New polishing methods hpve yielded smooth surfaces in reasonable polishing times. Recent research hclds promise for large optics made from single... forced to the surface , precipitating on the surface as a diamond layer. A halogen-assisted CVD method has recently been discovered for producing...diamond [24]; however, this research is in an early stage and has not yet resulted in good quality diamond films. Optical Properties of CVD Diamond. Many

  8. Ultimate Atomic Bling: Nanotechnology of Diamonds

    SciTech Connect

    Dahl, Jeremy

    2010-05-25

    Diamonds exist in all sizes, from the Hope Diamond to minuscule crystals only a few atoms across. The smallest of these diamonds are created naturally by the same processes that make petroleum. Recently, researchers discovered that these 'diamondoids' are formed in many different structural shapes, and that these shapes can be used like LEGO blocks for nanotechnology. This talk will discuss the discovery of these nano-size diamonds and highlight current SLAC/Stanford research into their applications in electronics and medicine.

  9. Diamond and diamond-like films for transportation applications

    SciTech Connect

    Perez, J.M.

    1993-01-01

    This section is a compilation of transparency templates which describe the goals of the Office of Transportation Materials (OTM) Tribology Program. The positions of personnel on the OTM are listed. The role and mission of the OTM is reviewed. The purpose of the Tribology Program is stated to be `to obtain industry input on program(s) in tribology/advanced lubricants areas of interest`. The objective addressed here is to identify opportunities for cost effective application of diamond and diamond-like carbon in transportation systems.

  10. Synchrotron radiation x-ray beam profile monitor using chemical vapor deposition diamond film

    SciTech Connect

    Kudo, Togo; Takahashi, Sunao; Nariyama, Nobuteru; Hirono, Toko; Tachibana, Takeshi; Kitamura, Hideo

    2006-12-15

    Photoluminescence (PL) of a Si-doped polycrystalline diamond film fabricated using the chemical vapor deposition technique was employed to measure the profile of a synchrotron radiation pink x-ray beam emitted from an in-vacuum hybrid undulator at the SPring-8 facility. The spectrum of the section of the diamond film penetrated by the emitted visible red light exhibited a peak at 739 nm and a wideband structure extending from 550 to 700 nm. The PL intensity increased with the absorbed dose of the incident beam in the diamond within a dynamic range of 10{sup 3}. A two-dimensional distribution of the PL intensity revealed the undulator beam profile.

  11. Electrostatically self-assembled polyoxometalates on molecular-dye-functionalized diamond.

    PubMed

    Zhong, Yu Lin; Ng, Wibowo; Yang, Jia-Xiang; Loh, Kian Ping

    2009-12-30

    We have successfully immobilized phosphotungstic acid (PTA), a polyoxometalate, on the surface of boron-doped diamond (BDD) surface through electrostatic self-assembly of PTA on pyridinium dye-functionalized-BDD. The inorganic/organic bilayer structure on BDD is found to exhibit fast surface-confined reversible electron transfer. The molecular dye-grafted BDD can undergo controllable electrical stripping and regeneration of PTA which can be useful for electronics or sensing applications. Furthermore, we have demonstrated the use of PTA as a molecular switch in which the direction of photocurrent from diamond to methyl viologen is reversed by the surface bound PTA. Robust photocurrent converter based on such molecular system-diamond platform can operate in corrosive medium which is not tolerated by indium tin oxide electrodes.

  12. Metal/Diamond Composite Thin-Film Electrodes: New Carbon Supported Catalytic Electrodes

    SciTech Connect

    Greg M. Swain, PI

    2009-03-10

    The DOE-funded research conducted by the Swain group was focused on (i) understanding structure-function relationships at boron-doped diamond thin-film electrodes, (ii) understanding metal phase formation on diamond thin films and developing electrochemical approaches for producing highly dispersed electrocatalyst particles (e.g., Pt) of small nominal particle size, (iii) studying the electrochemical activity of the electrocatalytic electrodes for hydrogen oxidation and oxygen reduction and (iv) conducting the initial synthesis of high surface area diamond powders and evaluating their electrical and electrochemical properties when mixed with a Teflon binder. (Note: All potentials are reported versus Ag/AgCl (sat'd KCl) and cm{sup 2} refers to the electrode geometric area, unless otherwise stated).

  13. Optoelectronic properties of p-diamond/n-GaN nanowire heterojunctions

    SciTech Connect

    Schuster, Fabian Hetzl, Martin; Weiszer, Saskia; Garrido, Jose A.; Stutzmann, Martin; Wolfer, Marco; Nebel, Christoph E.; Kato, Hiromitsu

    2015-10-21

    In this work, nanodiodes comprised of n-GaN nanowires on p-diamond substrates are investigated. The electric transport properties are discussed on the basis of simulations and determined experimentally for individual p-diamond/n-GaN nanodiodes by applying conductive atomic force microscopy. For low doping concentrations, a high rectification ratio is observed. The fabrication of a prototype nanoLED device on the basis of ensemble nanowire contacts is presented, showing simultaneous electroluminescence in the UV and the green spectral range which can be ascribed to hole injection into the n-GaN nanowires and electron injection into the p-diamond, respectively. In addition, the operation and heat distribution of the nanoLED device are visualized by active thermographic imaging.

  14. Diamond thin films grown by microwave plasma assisted chemical vapor deposition

    SciTech Connect

    Leksono, M.

    1991-09-05

    Undoped and boron doped diamond thin films have been successfully grown by microwave plasma chemical vapor deposition from CH{sub 4}, H{sub 2}, and B{sub 2}H{sub 6}. The films were characterized using x- ray diffraction techniques, Raman and infrared spectroscopies, scanning electron microscopy, secondary ion mass spectrometry, and various electrical measurements. The deposition rates of the diamond films were found to increase with the CH{sub 4} concentration, substrate temperature, and/or pressure, and at 1.0% methane, 900{degrees}C, and 35 Torr, the value was measured to be 0.87 {mu}m/hour. The deposition rate for boron doped diamond films, decreases as the diborane concentration increases. The morphologies of the undoped diamond films are strongly related to the deposition parameters. As the temperature increases from 840 to 925 C, the film morphology changes from cubo-octahedron to cubic structures, while as the CH{sub 4} concentration increases from 0.5 to 1.0%, the morphology changes from triangular (111) faces with a weak preferred orientation to square (100) faces. At 2.0% Ch{sub 4} or higher the films become microcrystalline with cauliflower structures. Scanning electron microscopy analyses also demonstrate that selective deposition of undoped diamond films has been successfully achieved using a lift-off process with a resolution of at least 2 {mu}m. The x-ray diffraction and Raman spectra demonstrate that high quality diamond films have been achieved. The concentration of the nondiamond phases in the films grown at 1.0% CH{sub 4} can be estimated from the Raman spectra to be at less than 0.2% and increases with the CH{sub 4} concentration. The Raman spectra of the boron doped diamond films also indicate that the presence of boron tends to suppress the nondiamond phases in the films. Infrared spectra of the undoped diamond films show very weak CH stretch peaks which suggest that the hydrogen concentration is very low.

  15. Diamond Drilling Specification Manual and Course Outline.

    ERIC Educational Resources Information Center

    British Columbia Dept. of Education, Victoria.

    This publication presents the standards required of a person practicing diamond drilling in western Canada and provides an outline for teaching the skills and knowledge. It is divided into two parts. The Diamond Drilling Specification Manual establishes the levels of skill and knowledge required in the four certified levels of diamond drilling.…

  16. 46 CFR 45.33 - Diamond.

    Code of Federal Regulations, 2014 CFR

    2014-10-01

    ... 46 Shipping 2 2014-10-01 2014-10-01 false Diamond. 45.33 Section 45.33 Shipping COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) LOAD LINES GREAT LAKES LOAD LINES Load Line Marks § 45.33 Diamond. (a) Each vessel must be marked with the diamond mark described in figure 2 of § 45.35 amidships...

  17. 46 CFR 45.33 - Diamond.

    Code of Federal Regulations, 2012 CFR

    2012-10-01

    ... 46 Shipping 2 2012-10-01 2012-10-01 false Diamond. 45.33 Section 45.33 Shipping COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) LOAD LINES GREAT LAKES LOAD LINES Load Line Marks § 45.33 Diamond. (a) Each vessel must be marked with the diamond mark described in figure 2 of § 45.35 amidships...

  18. 46 CFR 45.33 - Diamond.

    Code of Federal Regulations, 2011 CFR

    2011-10-01

    ... 46 Shipping 2 2011-10-01 2011-10-01 false Diamond. 45.33 Section 45.33 Shipping COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) LOAD LINES GREAT LAKES LOAD LINES Load Line Marks § 45.33 Diamond. (a) Each vessel must be marked with the diamond mark described in figure 2 of § 45.35 amidships...

  19. 46 CFR 45.33 - Diamond.

    Code of Federal Regulations, 2013 CFR

    2013-10-01

    ... 46 Shipping 2 2013-10-01 2013-10-01 false Diamond. 45.33 Section 45.33 Shipping COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) LOAD LINES GREAT LAKES LOAD LINES Load Line Marks § 45.33 Diamond. (a) Each vessel must be marked with the diamond mark described in figure 2 of § 45.35 amidships...

  20. 46 CFR 45.33 - Diamond.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ... 46 Shipping 2 2010-10-01 2010-10-01 false Diamond. 45.33 Section 45.33 Shipping COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) LOAD LINES GREAT LAKES LOAD LINES Load Line Marks § 45.33 Diamond. (a) Each vessel must be marked with the diamond mark described in figure 2 of § 45.35 amidships...

  1. Underground at Black Diamond Mines

    SciTech Connect

    Higgins, C.T.

    1989-10-01

    Although California is noted for its mining history and annually leads the nation in total monetary value of minerals produced, there a few opportunities for the public to tour underground mines. One reason is that nearly all mining in the state today is done above ground in open pits. Another reason is that active underground mines are not commonly favorable to public tours. There is one place, Black Diamond Mines Regional Preserve, where the public can safely tour a formerly active underground mine. Black Diamond Mines Regional Preserve is a 3,600-acre parkland about 5 miles southwest of Antioch in Contra Costa County. The Preserve was established in the early 1970s and is administered by the East Bay Regional Park District. Black Diamond Mines Preserve is noteworthy for its mining history as well as its natural history, both of which are briefly described here.

  2. Diamond drumhead crystals (Conference Presentation)

    NASA Astrophysics Data System (ADS)

    Kolodziej, Tomasz; Vodnala, Preeti; Terentyev, Sergey A.; Blank, Vladimir D.; Shvyd'ko, Yuri V.

    2016-09-01

    Ultra-thin (< 100 um) diamond single crystals are essential for the realization of numerous next generation x-ray optical devices. Fabrication and handling of such ultra-thin crystal components without introducing damage and strain is a challenge. Drumhead crystals, monolithic crystal structures comprised of a thin membrane furnished with a surrounding solid collar would be a solution for the proper handling ensuring mechanically stable and strain-free mount of the membranes with efficient thermal transport. However, diamond being one of the hardest and chemically inert materials poses insurmountable difficulties in the fabrication. Here we report on a successful manufacturing of the diamond drumhead crystals using picosecond laser milling. Subsequent temperature treatment appears to be crucial for the membranes to become defect-free and unstrained, as revealed by x-ray double-crystal topography on an example of drumhead crystals with 1-mm in diameter and 28 um to 47 um-thick membranes in the (100) orientation.

  3. Diamond-silicon carbide composite

    DOEpatents

    Qian, Jiang; Zhao, Yusheng

    2006-06-13

    Fully dense, diamond-silicon carbide composites are prepared from ball-milled microcrystalline diamond/amorphous silicon powder mixture. The ball-milled powder is sintered (P=5–8 GPa, T=1400K–2300K) to form composites having high fracture toughness. A composite made at 5 GPa/1673K had a measured fracture toughness of 12 MPa.dot.m1/2. By contrast, liquid infiltration of silicon into diamond powder at 5 GPa/1673K produces a composite with higher hardness but lower fracture toughness. X-ray diffraction patterns and Raman spectra indicate that amorphous silicon is partially transformed into nanocrystalline silicon at 5 GPa/873K, and nanocrystalline silicon carbide forms at higher temperatures.

  4. Diamonds on Diamond: structural studies at extreme conditions on the Diamond Light Source.

    PubMed

    McMahon, M I

    2015-03-06

    Extreme conditions (EC) research investigates how the structures and physical and chemical properties of materials change when subjected to extremes of pressure and temperature. Pressures in excess of one million times atmospheric pressure can be achieved using a diamond anvil cell, and, in combination with high-energy, micro-focused radiation from a third-generation synchrotron such as Diamond, detailed structural information can be obtained using either powder or single-crystal diffraction techniques. Here, I summarize some of the research drivers behind international EC research, and then briefly describe the techniques by which high-quality diffraction data are obtained. I then highlight the breadth of EC research possible on Diamond by summarizing four examples from work conducted on the I15 and I19 beamlines, including a study which resulted in the first research paper from Diamond. Finally, I look to the future, and speculate as to the type of EC research might be conducted at Diamond over the next 10 years.

  5. Photochemical Hydrogen Doping Induced Embedded Two-Dimensional Metallic Channel Formation in InGaZnO at Room Temperature.

    PubMed

    Kim, Myeong-Ho; Lee, Young-Ahn; Kim, Jinseo; Park, Jucheol; Ahn, Seungbae; Jeon, Ki-Joon; Kim, Jeong Won; Choi, Duck-Kyun; Seo, Hyungtak

    2015-10-27

    The photochemical tunability of the charge-transport mechanism in metal-oxide semiconductors is of great interest since it may offer a facile but effective semiconductor-to-metal transition, which results from photochemically modified electronic structures for various oxide-based device applications. This might provide a feasible hydrogen (H)-radical doping to realize the effectively H-doped metal oxides, which has not been achieved by thermal and ion-implantation technique in a reliable and controllable way. In this study, we report a photochemical conversion of InGaZnO (IGZO) semiconductor to a transparent conductor via hydrogen doping to the local nanocrystallites formed at the IGZO/glass interface at room temperature. In contrast to thermal or ionic hydrogen doping, ultraviolet exposure of the IGZO surface promotes a photochemical reaction with H radical incorporation to surface metal-OH layer formation and bulk H-doping which acts as a tunable and stable highly doped n-type doping channel and turns IGZO to a transparent conductor. This results in the total conversion of carrier conduction property to the level of metallic conduction with sheet resistance of ∼16 Ω/□, room temperature Hall mobility of 11.8 cm(2) V(-1) sec(-1), the carrier concentration at ∼10(20) cm(-3) without any loss of optical transparency. We demonstrated successful applications of photochemically highly n-doped metal oxide via optical dose control to transparent conductor with excellent chemical and optical doping stability.

  6. An impedimetric immunosensor based on diamond nanowires decorated with nickel nanoparticles.

    PubMed

    Subramanian, Palaniappan; Motorina, Anastasiia; Yeap, Weng Siang; Haenen, Ken; Coffinier, Yannick; Zaitsev, Vladimir; Niedziolka-Jonsson, Joanna; Boukherroub, Rabah; Szunerits, Sabine

    2014-04-07

    Nanostructured boron-doped diamond has been investigated as a sensitive impedimetric electrode for the detection of immunoglobulin G (IgG). The immunosensor was constructed in a three-step process: (i) reactive ion etching of flat boron-doped diamond (BDD) interfaces to synthesize BDD nanowires (BDD NWs), (ii) electrochemical deposition of nickel nanoparticles (Ni NPs) on the BDD NWs, and (iii) immobilization of biotin-tagged anti-IgG onto the Ni NPs. Electrochemical impedance spectroscopy (EIS) was used to follow the binding of IgG at different concentrations without the use of any additional label. A detection limit of 0.3 ng mL(-1) (2 nM) with a dynamic range up to 300 ng mL(-1) (2 μM) was obtained with the interface. Moreover, the study demonstrated that this immunosensor exhibits good stability over time and allows regeneration by incubation in ethylenediaminetetraacetic acid (EDTA) aqueous solution.

  7. Planar Field Emitters and High Efficiency Photocathodes Based on Ultrananocrystalline Diamond

    NASA Technical Reports Server (NTRS)

    Sumant, Anirudha V. (Inventor); Baryshev, Sergey V. (Inventor); Antipov, Sergey P. (Inventor)

    2016-01-01

    A method of forming a field emitter comprises disposing a first layer on a substrate. The first layer is seeded with nanodiamond particles. The substrate with the first layer disposed thereon is maintained at a first temperature and a first pressure in a mixture of gases which includes nitrogen. The first layer is exposed to a microwave plasma to form a nitrogen doped ultrananocrystalline diamond film on the first layer, which has a percentage of nitrogen in the range of about 0.05 atom % to about 0.5 atom %. The field emitter has about 10.sup.12 to about 10.sup.14 emitting sites per cm.sup.2. A photocathode can also be formed similarly by forming a nitrogen doped ultrananocrystalline diamond film on a substrate similar to the field emitter, and then hydrogen terminating the film. The photocathode is responsive to near ultraviolet light as well as to visible light.

  8. Planar field emitters and high efficiency photocathodes based on ultrananocrystalline diamond

    DOEpatents

    Sumant, Anirudha V.; Baryshev, Sergey V.; Antipov, Sergey P.

    2016-08-16

    A method of forming a field emitter comprises disposing a first layer on a substrate. The first layer is seeded with nanodiamond particles. The substrate with the first layer disposed thereon is maintained at a first temperature and a first pressure in a mixture of gases which includes nitrogen. The first layer is exposed to a microwave plasma to form a nitrogen doped ultrananocrystalline diamond film on the first layer, which has a percentage of nitrogen in the range of about 0.05 atom % to about 0.5 atom %. The field emitter has about 10.sup.12 to about 10.sup.14 emitting sites per cm.sup.2. A photocathode can also be formed similarly by forming a nitrogen doped ultrananocrystalline diamond film on a substrate similar to the field emitter, and then hydrogen terminating the film. The photocathode is responsive to near ultraviolet light as well as to visible light.

  9. Growth of CVD diamond nanopillars with imbedded silicon-vacancy color centers

    NASA Astrophysics Data System (ADS)

    Sovyk, D. N.; Ralchenko, V. G.; Tukmakov, K. N.; Shershulin, V. A.; Khomich, A. A.; Vorobyov, V. V.; Vlasov, I. I.; Akimov, A. V.

    2016-11-01

    Silicon-doped diamond nanopillars have been produced by a microwave plasma chemical vapor deposition (CVD) on a single crystal diamond substrate through holes in a Si mask perforated with a focused ion beam. Arrays of 400 nm diameter pillars with aspect ratio up to 2.8 are grown epitaxially being confined by channels in the mask, the latter serving also as the Si doping source. Strong photoluminescent (PL) emission of the SiV centers at 738.7 nm wavelength, localized within the pillars, has been detected and imaged with a fluorescence microscope. The SiV PL decay time of 1.1 ns has been deduced from PL kinetics measurements. An increase of specific PL intensity (intensity per unit volume of the pillar) with the aspect ratio is noted.

  10. Microfabrication, characterization and in vivo MRI compatibility of diamond microelectrodes array for neural interfacing.

    PubMed

    Hébert, Clément; Warnking, Jan; Depaulis, Antoine; Garçon, Laurie Amandine; Mermoux, Michel; Eon, David; Mailley, Pascal; Omnès, Franck

    2015-01-01

    Neural interfacing still requires highly stable and biocompatible materials, in particular for in vivo applications. Indeed, most of the currently used materials are degraded and/or encapsulated by the proximal tissue leading to a loss of efficiency. Here, we considered boron doped diamond microelectrodes to address this issue and we evaluated the performances of a diamond microelectrode array. We described the microfabrication process of the device and discuss its functionalities. We characterized its electrochemical performances by cyclic voltammetry and impedance spectroscopy in saline buffer and observed the typical diamond electrode electrochemical properties, wide potential window and low background current, allowing efficient electrochemical detection. The charge storage capacitance and the modulus of the electrochemical impedance were found to remain in the same range as platinum electrodes used for standard commercial devices. Finally we observed a reduced Magnetic Resonance Imaging artifact when the device was implanted on a rat cortex, suggesting that boron doped-diamond is a very promising electrode material allowing functional imaging.

  11. An all-diamond, hermetic electrical feedthrough array for a retinal prosthesis.

    PubMed

    Ganesan, Kumaravelu; Garrett, David J; Ahnood, Arman; Shivdasani, Mohit N; Tong, Wei; Turnley, Ann M; Fox, Kate; Meffin, Hamish; Prawer, Steven

    2014-01-01

    The interface between medical implants and the human nervous system is rapidly becoming more and more complex. This rise in complexity is driving the need for increasing numbers of densely packed electrical feedthrough to carry signals to and from implanted devices. This is particularly crucial in the field of neural prosthesis where high resolution stimulating or recording arrays near peripheral nerves or in the brain could dramatically improve the performance of these devices. Here we describe a flexible strategy for implementing high density, high count arrays of hermetic electrical feedthroughs by forming conducting nitrogen doped nanocrystalline diamond channels within an insulating polycrystalline diamond substrate. A unique feature of these arrays is that the feedthroughs can themselves be used as stimulating electrodes for neural tissue. Our particular application is such a feedthrough, designed as a component of a retinal implant to restore vision to the blind. The hermeticity of the feedthroughs means that the array can also form part of an implantable capsule which can interface directly with internal electronic chips. The hermeticity of the array is demonstrated by helium leak tests and electrical and electrochemical characterisation of the feedthroughs is described. The nitrogen doped nanocrystalline diamond forming the electrical feedthroughs is shown to be non-cyctotoxic. New fabrication strategies, such as the one described here, combined with the exceptional biostability of diamond can be exploited to generate a range of biomedical implants that last for the lifetime of the user without fear of degradation.

  12. Crystallographic orientations of olivine inclusions in diamonds

    NASA Astrophysics Data System (ADS)

    Milani, S.; Nestola, F.; Angel, R. J.; Nimis, P.; Harris, J. W.

    2016-11-01

    In this work we report for the first time the crystallographic orientations of olivine inclusions trapped in diamonds from the Kaapvaal craton (South Africa) determined by single-crystal X-ray diffraction, and analyze them together with all available data in the literature. The overall data set indicates no preferred orientation of the olivine inclusions with respect to their diamond hosts. However, diamonds containing multiple olivine inclusions sometimes show clusters of olivines with the same orientation in the same diamond host. We conclude that such clusters can only be interpreted as the remnants of single olivine crystals pre-dating the growth of the host diamonds.

  13. Diamond Ablators for Inertial Confinement Fusion

    SciTech Connect

    Biener, J; Mirkarimi, P B; Tringe, J W; Baker, S L; Wang, Y M; Kucheyev, S O; Teslich, N E; Wu, K J; Hamza, A V; Wild, C; Woerner, E; Koidl, P; Bruehne, K; Fecht, H

    2005-06-21

    Diamond has a unique combination of physical properties for the inertial confinement fusion ablator application, such as appropriate optical properties, high atomic density, high yield strength, and high thermal conductivity. Here, we present a feasible concept to fabricate diamond ablator shells. The fabrication of diamond capsules is a multi-step process, which involves diamond chemical vapor deposition on silicon mandrels followed by polishing, microfabrication of holes, and removing of the silicon mandrel by an etch process. We also discuss the pros and cons of coarse-grained optical quality and nanocrystalline chemical vapor deposition diamond films for the ablator application.

  14. Electron Microscopy of Natural and Epitaxial Diamond

    NASA Technical Reports Server (NTRS)

    Posthill, J. B.; George, T.; Malta, D. P.; Humphreys, T. P.; Rudder, R. A.; Hudson, G. C.; Thomas, R. E.; Markunas, R. J.

    1993-01-01

    Semiconducting diamond films have the potential for use as a material in which to build active electronic devices capable of operating at high temperatures or in high radiation environments. Ultimately, it is preferable to use low-defect-density single crystal diamond for device fabrication. We have previously investigated polycrystalline diamond films with transmission electron microscopy (TEM) and scanning electron microscopy (SEM), and homoepitaxial films with SEM-based techniques. This contribution describes some of our most recent observations of the microstructure of natural diamond single crystals and homoepitaxial diamond thin films using TEM.

  15. Method for machining steel with diamond tools

    DOEpatents

    Casstevens, J.M.

    1984-01-01

    The present invention is directed to a method for machine optical quality finishes and contour accuracies of workpieces of carbon-containing metals such as steel with diamond tooling. The wear rate of the diamond tooling is significantly reduced by saturating the atmosphere at the interface of the workpiece and the diamond tool with a gaseous hydrocarbon during the machining operation. The presence of the gaseous hydrocarbon effectively eliminates the deterioration of the diamond tool by inhibiting or preventing the conversion of the diamond carbon to graphite carbon at the point of contact between the cutting tool and the workpiece.

  16. Method for machining steel with diamond tools

    DOEpatents

    Casstevens, John M.

    1986-01-01

    The present invention is directed to a method for machining optical quality inishes and contour accuracies of workpieces of carbon-containing metals such as steel with diamond tooling. The wear rate of the diamond tooling is significantly reduced by saturating the atmosphere at the interface of the workpiece and the diamond tool with a gaseous hydrocarbon during the machining operation. The presence of the gaseous hydrocarbon effectively eliminates the deterioration of the diamond tool by inhibiting or preventing the conversion of the diamond carbon to graphite carbon at the point of contact between the cutting tool and the workpiece.

  17. Thermal Conductivity Of Natural Type IIa Diamond

    NASA Technical Reports Server (NTRS)

    Vandersande, Jan; Vining, Cronin; Zoltan, Andrew

    1992-01-01

    Report describes application of flash diffusivity method to measure thermal conductivity of 8.04 x 8.84 x 2.35-mm specimen of natural, white, type-IIa diamond at temperatures between 500 and 1,250 K. Provides baseline for comparison to isotopically pure (12C) diamond. Results used as reference against which diamond films produced by chemical-vapor deposition at low pressures can be compared. High thermal conductivity of diamond exploited for wide variety of applications, and present results also used to estimate heat-conduction performances of diamond films in high-temperature applications.

  18. Enhancing secondary yield of a diamond amplifier using a nitrogen layer

    SciTech Connect

    Jensen, Kevin L.; Shaw, Jonathan L.; Yater, Joan E.; Pate, Bradford B.

    2015-06-07

    A thin nitrogen-doped layer less than 4% of the total thickness in diamond thin film amplifier is shown to reduce losses of generated secondaries to the back contact, generated by a high energy primary electron beam compared to a thin film without the substitutional nitrogen layer modification. Simulation indicates that the losses due to absorption of diffusing electrons by the back contact may be considerably reduced by a factor of 2 (depending on field across the film, width of the nitrogen layer, and boron doping level), thereby mitigating undesirable effects associated with trace amounts of boron.

  19. White electroluminescence of n-ZnO:Al/p-diamond heterostructure devices

    NASA Astrophysics Data System (ADS)

    Yang, Can; Wang, Xiao-Ping; Wang, Li-Jun; Pan, Xiu-Fang; Li, Song-Kun; Jing, Long-Wei

    2013-08-01

    An n-ZnO:Al/p-boron-doped diamond heterostructure electroluminescent device is produced, and a rectifying behavior can be observed. The electroluminescence spectrum at room temperature exhibits two visible bands centred at 450 nm-485 nm (blue emission) and 570 nm-640 nm (yellow emission). Light emission with a luminance of 15 cd/m2 is observed from the electroluminescent device at a forward applied voltage of 85 V, which is distinguished from white light by the naked eye.

  20. Effect of ni on the Electrical and Microstructural Properties of Nanocrystallites Fe2O3/TiO2 System

    NASA Astrophysics Data System (ADS)

    Sobhy, Maged S.

    Nominal compositions of NixTi1-xFe2O5-δ (x = 0, 0.2, 0.4, 0.6, 0.8 and 1) were prepared by a solid state reaction using stoichiometric amounts of Fe2O3/TiO2 system and NiO as a dopant. The effects of small substitution of Ni ions on the electrical and structural properties were studied for the above system. The X-ray diffraction patterns revealed that the ferroelectric phase of iron titanate and the spinel ferrite phase of Ni-ferrite having a single phase at x = 0 and 1, respectively. The substitution of Ni ions increases the average value of lattice constant aav. Solid-solid interaction took place between the ternary oxides at 1200°C for 4 h yielding a new phase of NiTiO3. The presence of the three phases was confirmed by X-ray diffraction technique. The resultant compositions have nanocrystallites with average crystalline size "Dav" in the range 100-300 nm. The DC electrical resistivity ρ, Curie temperature TC and activation energies for electric conduction around TC region increase as Ni ion substitution increases. The ferrite samples have a semiconductor behavior where electrical resistivity ρ decreases on increasing temperature. The activation energy for electrical conduction was affected by both the ratio "ferroelectric/ferrite" and the position of the Curie temperatures in the compositions depending on the (Ni, Ti) to Fe ratio.

  1. Thin film solar cells with Si nanocrystallites embedded in amorphous intrinsic layers by hot-wire chemical vapor deposition.

    PubMed

    Park, Seungil; Parida, Bhaskar; Kim, Keunjoo

    2013-05-01

    We investigated the thin film growths of hydrogenated silicon by hot-wire chemical vapor deposition with different flow rates of SiH4 and H2 mixture ambient and fabricated thin film solar cells by implementing the intrinsic layers to SiC/Si heterojunction p-i-n structures. The film samples showed the different infrared absorption spectra of 2,000 and 2,100 cm(-1), which are corresponding to the chemical bonds of SiH and SiH2, respectively. The a-Si:H sample with the relatively high silane concentration provides the absorption peak of SiH bond, but the microc-Si:H sample with the relatively low silane concentration provides the absorption peak of SiH2 bond as well as SiH bond. Furthermore, the microc-Si:H sample showed the Raman spectral shift of 520 cm(-1) for crystalline phase Si bonds as well as the 480 cm(-1) for the amorphous phase Si bonds. These bonding structures are very consistent with the further analysis of the long-wavelength photoconduction tail and the formation of nanocrystalline Si structures. The microc-Si:H thin film solar cell has the photovoltaic behavior of open circuit voltage similar to crystalline silicon thin film solar cell, indicating that microc-Si:H thin film with the mixed phase of amorphous and nanocrystalline structures show the carrier transportation through the channel of nanocrystallites.

  2. Microplasma device architectures with various diamond nanostructures

    NASA Astrophysics Data System (ADS)

    Kunuku, Srinivasu; Jothiramalingam Sankaran, Kamatchi; Leou, Keh-Chyang; Lin, I.-Nan

    2017-02-01

    Diamond nanostructures (DNSs) were fabricated from three different morphological diamonds, microcrystalline diamond (MCD), nanocrystalline diamond (NCD), and ultrananocrystalline diamond (UNCD) films, using a reactive ion etching method. The plasma illumination (PI) behavior of microplasma devices using the DNSs and the diamond films as cathode were investigated. The Paschen curve approach revealed that the secondary electron emission coefficient (γ value) of diamond materials is similar irrespective of the microstructure (MCD, NCD, and UNCD) and geometry of the materials (DNSs and diamond films). The diamond materials show markedly larger γ-coefficient than conventional metallic cathode materials such as Mo that resulted in markedly better PI behavior for the corresponding microplasma devices. Moreover, the PI behavior, i.e. the voltage dependence of plasma current density (J pl‑V), plasma density (n e‑V), and the robustness of the devices, varied markedly with the microstructure and geometry of the cathode materials that was closely correlated to the electron field emission (EFE) properties of the cathode materials. The UNCD nanopillars, possessing good EFE properties, resulted in superior PI behavior, whereas the MCD diamond films with insufficient EFE properties led to inferior PI behavior. Consequently, enhancement of plasma characteristics is the collective effects of EFE behavior and secondary electron emission characteristics of diamond-based cathode materials.

  3. Superhard material comparable in hardness to diamond

    SciTech Connect

    Badzian, A.R.

    1988-12-19

    Superhard boron suboxides, with hardness close to that of diamond, were synthesized from boron/boron oxide mixtures. Such hardness is expected when a material's molar volume approaches the value characteristic for diamond. These materials consist of boron-rich phases belonging to the boron-oxygen system. The phase which contains 4 at. % oxygen and a crystal structure related to ..beta..rhombohedral boron can scratch diamond faces. During scratching of diamond the suboxide is worn also, and the wear debris is amorphized. Wear on the lt. slash/100/ diamond faces results from a cleavage mechanism which leaves a rough surface covered with cleaved lt. slash/111/ microfaces. The lt. slash/100/ faces are more easily abraded than the lt. slash/111/ diamond faces. Wear on lt. slash/111/ faces consumes much more energy and leaves grooves of plastically deformed diamond.

  4. Microcrystalline diamond cylindrical resonators with quality-factor up to 0.5 million

    SciTech Connect

    Saito, Daisuke; Yang, Chen; Lin, Liwei; Heidari, Amir; Najar, Hadi; Horsley, David A.

    2016-02-01

    We demonstrate high quality-factor 1.5 mm diameter batch-fabricated microcrystalline diamond cylindrical resonators (CR) with quality-factors limited by thermoelastic damping (TED) and surface loss. Resonators were fabricated 2.6 and 5.3 μm thick in-situ boron-doped microcrystalline diamond films deposited using hot filament chemical vapor deposition. The quality-factor (Q) of as-fabricated CR's was found to increase with the resonator diameter and diamond thickness. Annealing the CRs at 700 °C in a nitrogen atmosphere led to a three-fold increase in Q, a result we attribute to thinning of the diamond layer via reaction with residual O{sub 2} in the annealing furnace. Post-anneal Q exceeding 0.5 million (528 000) was measured at the 19 kHz elliptical wineglass modes, producing a ring-down time of 8.9 s. A model for Q versus diamond thickness and resonance frequency is developed including the effects of TED and surface loss. Measured quality factors are shown to agree with the predictions of this model.

  5. Diamond and Hydrogenated Carbons for Advanced Batteries and Fuel Cells: Fundamental Studies and Applications.

    SciTech Connect

    Swain; Greg M.

    2009-04-13

    The original funding under this project number was awarded for a period 12/1999 until 12/2002 under the project title Diamond and Hydrogenated Carbons for Advanced Batteries and Fuel Cells: Fundamental Studies and Applications. The project was extended until 06/2003 at which time a renewal proposal was awarded for a period 06/2003 until 06/2008 under the project title Metal/Diamond Composite Thin-Film Electrodes: New Carbon Supported Catalytic Electrodes. The work under DE-FG02-01ER15120 was initiated about the time the PI moved his research group from the Department of Chemistry at Utah State University to the Department of Chemistry at Michigan State University. This DOE-funded research was focused on (i) understanding structure-function relationships at boron-doped diamond thin-film electrodes, (ii) understanding metal phase formation on diamond thin films and developing electrochemical approaches for producing highly dispersed electrocatalyst particles (e.g., Pt) of small nominal particle size, (iii) studying the electrochemical activity of the electrocatalytic electrodes for hydrogen oxidation and oxygen reduction and (iv) conducting the initial synthesis of high surface area diamond powders and evaluating their electrical and electrochemical properties when mixed with a Teflon binder.

  6. 'Diamond Jenness': A Tough Grind

    NASA Technical Reports Server (NTRS)

    2004-01-01

    This microscopic imager mosaic of the target area called 'Diamond Jenness' was taken after NASA's Mars Exploration Rover Opportunity ground into the surface with its rock abrasion tool for a second time.

    Opportunity has bored nearly a dozen holes into the inner walls of 'Endurance Crater.' On sols 177 and 178 (July 23 and July 24, 2004), the rover worked double-duty on Diamond Jenness. Surface debris and the bumpy shape of the rock resulted in a shallow and irregular hole, only about 2 millimeters (0.08 inch) deep. The final depth was not enough to remove all the bumps and leave a neat hole with a smooth floor. This extremely shallow depression was then examined by the rover's alpha particle X-ray spectrometer.

    On Sol 178, Opportunity's 'robotic rodent' dined on Diamond Jenness once again, grinding almost an additional 5 millimeters (about 0.2 inch). The rover then applied its Moessbauer spectrometer to the deepened hole. This double dose of Diamond Jenness enabled the science team to examine the rock at varying layers. Results from those grindings are currently being analyzed.

    The image mosaic is about 6 centimeters (2.4 inches) across.

  7. 'Diamond Jenness': After the Grind

    NASA Technical Reports Server (NTRS)

    2004-01-01

    This microscopic imager mosaic taken by NASA's Mars Exploration Rover Opportunity shows the rock dubbed 'Diamond Jenness.' It was taken on sol 177 (July 23, 2004) after the rover first ground into the rock with its rock abrasion tool, or 'Rat.' The rover later ground into the rock a second time. A sliced spherule, or 'blueberry,' is visible in the upper left corner of the hole.

    Opportunity has bored nearly a dozen holes into the inner walls of 'Endurance Crater.' On sols 177 and 178 (July 23 and July 24, 2004), the rover worked double-duty on Diamond Jenness. Surface debris and the bumpy shape of the rock resulted in a shallow and irregular hole, only about 2 millimeters (0.08 inch) deep. The final depth was not enough to remove all the bumps and leave a neat hole with a smooth floor. This extremely shallow depression was then examined by the rover's alpha particle X-ray spectrometer.

    On Sol 178, Opportunity's 'robotic rodent' dined on Diamond Jenness once again, grinding almost an additional 5 millimeters (about 0.2 inch). The rover then applied its Moessbauer spectrometer to the deepened hole. This double dose of Diamond Jenness enabled the science team to examine the rock at varying layers. Results from those grindings are currently being analyzed.

    The image mosaic is about 6 centimeters (2.4 inches) across.

  8. 'Diamond Jenness': Before the Grind

    NASA Technical Reports Server (NTRS)

    2004-01-01

    This microscopic imager mosaic of the rock called 'Diamond Jenness' was snapped on sol 177 before NASA's Mars Exploration Rover Opportunity ground into the surface with its rock abrasion tool, or 'Rat.'

    Opportunity has bored nearly a dozen holes into the inner walls of 'Endurance Crater.' On sols 177 and 178 (July 23 and July 24, 2004), the rover worked double-duty on Diamond Jenness. Surface debris and the bumpy shape of the rock resulted in a shallow and irregular hole, only about 2 millimeters (0.08 inch) deep. The final depth was not enough to remove all the bumps and leave a neat hole with a smooth floor. This extremely shallow depression was then examined by the rover's alpha particle X-ray spectrometer. On Sol 178, Opportunity's 'robotic rodent' dined on Diamond Jenness once again, grinding almost an additional 5 millimeters (about 0.2 inch). The rover then applied its Moessbauer spectrometer to the deepened hole. This double dose of Diamond Jenness enabled the science team to examine the rock at varying layers. Results from those grindings are currently being analyzed.

    The image mosaic is about 6 centimeters (2.4 inches) across.

  9. Diamond detectors for time-of-flight measurements in laser-generated plasmas

    NASA Astrophysics Data System (ADS)

    Torrisi, L.; Margarone, D.; Milani, E.; Verona-Rinati, G.; Prestopino, G.; Tuvè, C.; Potenza, R.; Láska, L.; Krása, J.; Ullschmied, J.

    CVD mono-crystalline diamond thin films deposited on a doped diamond and aluminum backing were employed as detectors of the radiation emitted from the laser-generated plasma. Laser-matter interactions were obtained by the use of an Nd:Yag repetitive laser at INFN-LNS in Catania operating at 1010 W/cm2 pulse intensity, and a high-power iodine PALS laser in Prague operating at 1015 W/cm2 pulse intensity. Plasmas were obtained by ablating Al, Ta, Au, and CF2 bulk targets. Plasma characterization was carried out using diamond detectors and ion collectors placed at different distances and angles in relation to the position of the ablated target. Photons, electrons, and ions hitting the sensible volume of the detector generate electronhole pairs (loosing 13 eV for a pair), resulting in an arising of the voltage signal at the device electrodes, which is proportional to the deposited energy. Diamond detectors can measure UV, X-rays, electrons, and ions. The time-of-flight (TOF) technique was exploited to separate photon, electron, and particle contributions. Because of the high gap of the diamond band structure (5.48 eV), the detectors are blind to visible and IR light from the plasma, which results in very low background current. The TOF diamond spectra were compared with traditional ion collector spectra using the experimental data obtained from the experiments conducted at the Catania and Prague laboratories. The results indicate that the ion energy resolution of the employed diamond detectors is high and that the fast electrons can be detected from a deconvolution procedure applied to the fast photo-peak. Information about the mean energy of soft X-rays could be obtained by analyzing the fast contribute of the spectra acquired by using different absorber films.

  10. Diamond Nanowires: A Novel Platform for Electrochemistry and Matrix-Free Mass Spectrometry

    PubMed Central

    Szunerits, Sabine; Coffinier, Yannick; Boukherroub, Rabah

    2015-01-01

    Over the last decades, carbon-based nanostructures have generated a huge interest from both fundamental and technological viewpoints owing to their physicochemical characteristics, markedly different from their corresponding bulk states. Among these nanostructured materials, carbon nanotubes (CNTs), and more recently graphene and its derivatives, hold a central position. The large amount of work devoted to these materials is driven not only by their unique mechanical and electrical properties, but also by the advances made in synthetic methods to produce these materials in large quantities with reasonably controllable morphologies. While much less studied than CNTs and graphene, diamond nanowires, the diamond analogue of CNTs, hold promise for several important applications. Diamond nanowires display several advantages such as chemical inertness, high mechanical strength, high thermal and electrical conductivity, together with proven biocompatibility and existence of various strategies to functionalize their surface. The unique physicochemical properties of diamond nanowires have generated wide interest for their use as fillers in nanocomposites, as light detectors and emitters, as substrates for nanoelectronic devices, as tips for scanning probe microscopy as well as for sensing applications. In the past few years, studies on boron-doped diamond nanowires (BDD NWs) focused on increasing their electrochemical active surface area to achieve higher sensitivity and selectivity compared to planar diamond interfaces. The first part of the present review article will cover the promising applications of BDD NWS for label-free sensing. Then, the potential use of diamond nanowires as inorganic substrates for matrix-free laser desorption/ionization mass spectrometry, a powerful label-free approach for quantification and identification of small compounds, will be discussed. PMID:26024422

  11. Diamond nanowires: a novel platform for electrochemistry and matrix-free mass spectrometry.

    PubMed

    Szunerits, Sabine; Coffinier, Yannick; Boukherroub, Rabah

    2015-05-27

    Over the last decades, carbon-based nanostructures have generated a huge interest from both fundamental and technological viewpoints owing to their physicochemical characteristics, markedly different from their corresponding bulk states. Among these nanostructured materials, carbon nanotubes (CNTs), and more recently graphene and its derivatives, hold a central position. The large amount of work devoted to these materials is driven not only by their unique mechanical and electrical properties, but also by the advances made in synthetic methods to produce these materials in large quantities with reasonably controllable morphologies. While much less studied than CNTs and graphene, diamond nanowires, the diamond analogue of CNTs, hold promise for several important applications. Diamond nanowires display several advantages such as chemical inertness, high mechanical strength, high thermal and electrical conductivity, together with proven biocompatibility and existence of various strategies to functionalize their surface. The unique physicochemical properties of diamond nanowires have generated wide interest for their use as fillers in nanocomposites, as light detectors and emitters, as substrates for nanoelectronic devices, as tips for scanning probe microscopy as well as for sensing applications. In the past few years, studies on boron-doped diamond nanowires (BDD NWs) focused on increasing their electrochemical active surface area to achieve higher sensitivity and selectivity compared to planar diamond interfaces. The first part of the present review article will cover the promising applications of BDD NWS for label-free sensing. Then, the potential use of diamond nanowires as inorganic substrates for matrix-free laser desorption/ionization mass spectrometry, a powerful label-free approach for quantification and identification of small compounds, will be discussed.

  12. Airplane dopes and doping

    NASA Technical Reports Server (NTRS)

    Smith, W H

    1919-01-01

    Cellulose acetate and cellulose nitrate are the important constituents of airplane dopes in use at the present time, but planes were treated with other materials in the experimental stages of flying. The above compounds belong to the class of colloids and are of value because they produce a shrinking action on the fabric when drying out of solution, rendering it drum tight. Other colloids possessing the same property have been proposed and tried. In the first stages of the development of dope, however, shrinkage was not considered. The fabric was treated merely to render it waterproof. The first airplanes constructed were covered with cotton fabric stretched as tightly as possible over the winds, fuselage, etc., and flying was possible only in fine weather. The necessity of an airplane which would fly under all weather conditions at once became apparent. Then followed experiments with rubberized fabrics, fabrics treated with glue rendered insoluble by formaldehyde or bichromate, fabrics treated with drying and nondrying oils, shellac, casein, etc. It was found that fabrics treated as above lost their tension in damp weather, and the oil from the motor penetrated the proofing material and weakened the fabric. For the most part the film of material lacked durability. Cellulose nitrate lacquers, however were found to be more satisfactory under varying weather conditions, added less weight to the planes, and were easily applied. On the other hand, they were highly inflammable, and oil from the motor penetrated the film of cellulose nitrate, causing the tension of the fabric to be relaxed.

  13. Diamond/diamond-like carbon coated nanotube structures for efficient electron field emission

    NASA Technical Reports Server (NTRS)

    Dimitrijevic, Steven (Inventor); Withers, James C. (Inventor); Loutfy, Raouf O. (Inventor)

    2005-01-01

    The present invention is directed to a nanotube coated with diamond or diamond-like carbon, a field emitter cathode comprising same, and a field emitter comprising the cathode. It is also directed to a method of preventing the evaporation of carbon from a field emitter comprising a cathode comprised of nanotubes by coating the nanotube with diamond or diamond-like carbon. In another aspect, the present invention is directed to a method of preventing the evaporation of carbon from an electron field emitter comprising a cathode comprised of nanotubes, which method comprises coating the nanotubes with diamond or diamond-like carbon.

  14. Multiple Diamond Anvil (MDA) apparatus using nano-polycrystalline diamond

    NASA Astrophysics Data System (ADS)

    Irifune, T.; Kunimoto, T.; Tange, Y.; Shinmei, T.; Isobe, F.; Kurio, A.; Funakoshi, K.

    2011-12-01

    Thanks to the great efforts by Dave Mao, Bill Bassett, Taro Takahashi, and their colleagues at the University of Rochester through 1960s-70s, diamond anvil cell (DAC) became a major tool to investigate the deep Earth after its invention by scientists at NBS in 1958. DAC can now cover almost the entire pressure and temperature regimes of the Earth's interior, which seems to have solved the longstanding debate on the crystal structure of iron under the P-T conditions of the Earth's inner core. In contrast, various types of static large-volume presses (LVP) have been invented, where tungsten carbide has conventionally been used as anvils. Kawai-type multianvil apparatus (MA), which utilize 6 first-stage harden steel and 8 tungsten carbide anvils, is the most successful LVP, and has been used for accurate measurements of phase transitions, physical properties, element partitioning, etc. at high pressure and temperature. However, pressures using tungsten carbide as the second-stage anvils have been limited to about 30 GPa due to significant plastic deformation of the anvils. Efforts have been made to expand this pressure limit by replacing tungsten carbide anvils with harder sintered diamond (SD) anvils over the last two decades, but the pressures available in KMA with SD anvils have still been limited to below 100 GPa. We succeeded to produce nano-polycrystalline diamond (NPD or HIME-Diamond) in 2003, which is known to have ultrahigh hardness, very high toughness and elastic stiffness, high transmittance of light, relatively low thermal conductivity. These properties are feasible for its use as anvils, and some preliminary experiments of application of NPD anvils to laser heated DAC have successfully made in the last few years. We are now able to synthesize NPD rods with about 1cm in both diameter and length using a newly constructed 6000-ton KMA at Geodynamics Research Center, Ehime University, and have just started to apply this new polycrystalline diamond as anvils

  15. Large single crystal diamond grown in FeNiMnCo-S-C system under high pressure and high temperature conditions

    NASA Astrophysics Data System (ADS)

    Zhang, He; Li, Shangsheng; Su, Taichao; Hu, Meihua; Li, Guanghui; Ma, Hongan; Jia, Xiaopeng

    2016-11-01

    Large diamonds have successfully been synthesized from FeNiMnCo-S-C system at temperatures of 1255-1393 °C and pressures of 5.3-5.5 GPa. Because of the presence of sulfur additive, the morphology and color of the large diamond crystals change obviously. The content and shape of inclusions change with increasing sulfur additive. It is found that the pressure and temperature conditions required for the synthesis decrease to some extent with the increase of S additive, which results in left down of the V-shape region. The Raman spectra show that the introduction of additive sulfur reduces the quality of the large diamond crystals. The x-ray photoelectron spectroscopy (XPS) spectra show the presence of S in the diamonds. Furthermore, the electrical properties of the large diamond crystals are tested by a four-point probe and the Hall effect method. When sulfur in the cell of diamond is up to 4.0 wt.%, the resistance of the diamond is 9.628×105 Ω·cm. It is shown that the large single crystal samples are n type semiconductors. This work is helpful for the further research and application of sulfur-doped semiconductor large diamond. Project supported by the National Natural Science Foundation of China (Grant No. 51172089), the Education Department of Henan Province, China (Grant No. 12A430010), and the Fundamental Research Funds for the Universities of Henan Province, China (Grant No. NSFRF140110).

  16. Characterization of synthesized and treated gem diamonds

    NASA Astrophysics Data System (ADS)

    Song, Ohsung

    2007-10-01

    Synthesized diamonds have been widely employed as polishing media for precise machining and noble substrates for microelectronics. The recent development of the split sphere press has led to the commercial HPHT (high pressure high temperature) synthesis of bulk gem diamonds from graphite and to the enhancement of low quality natural diamonds. Synthesized and treated diamonds are sometimes traded deceptively as high quality natural diamonds because it is hard to distinguish among these diamonds with conventional gemological characterization methods. Therefore, we need to develop a new identification method that is non-destructive, fast, and inexpensive. We proposed using new methods of UV fluorescence and X-ray Lang topography for checking the local HPHT stress field as well as using a vibrating sample magnetometer for checking ferromagnetic residue in synthesized diamonds to distinguish these diamonds from natural ones. We observe unique differences in the local stress field images in synthesized and treated diamonds using Lang topography and UV fluorescence characterization. Our result implies that our proposed methods may be appropriate for identification of the synthesized and treated diamonds.

  17. Synthesizing Diamond from Liquid Feedstock

    NASA Technical Reports Server (NTRS)

    Tzeng, Yonhua

    2005-01-01

    A relatively economical method of chemical vapor deposition (CVD) has been developed for synthesizing diamond crystals and films. Unlike prior CVD methods for synthesizing diamond, this method does not require precisely proportioned flows of compressed gas feedstocks or the use of electrical discharges to decompose the feedstocks to obtain free radicals needed for deposition chemical reactions. Instead, the feedstocks used in this method are mixtures of common organic liquids that can be prepared in advance, and decomposition of feedstock vapors is effected simply by heating. The feedstock used in this method is a solution comprising between 90 and 99 weight percent of methanol and the balance of one or more other oxyhydrocarbons that could include ethanol, isopropanol, and/or acetone. This mixture of compounds is chosen so that dissociation of molecules results in the desired proportions of carbon-containing radicals (principally, CH3) and of OH, H, and O radicals. Undesirably, the CVD temperature and pressure conditions thermodynamically favor the growth of graphite over the growth of diamond. The H radicals are desirable because they help to stabilize the growing surface of diamond by shifting the thermodynamic balance toward favoring the growth of diamond. The OH and O radicals are desirable because they preferentially etch graphite and other non-diamond carbon, thereby helping to ensure the net deposition of pure diamond. The non-methanol compounds are included in the solution because (1) methanol contains equal numbers of C and O atoms; (2) an excess of C over O is needed to obtain net deposition of diamond; and (3) the non-methanol molecules contain multiple carbon atoms for each oxygen atom and thus supply the needed excess carbon A typical apparatus used in this method includes a reservoir containing the feedstock liquid and a partially evacuated stainless-steel reaction chamber. The reservoir is connected to the chamber via tubing and a needle valve or

  18. 33 CFR 110.6 - Portland Harbor, Portland, Maine (between Little Diamond Island and Great Diamond Island).

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... (between Little Diamond Island and Great Diamond Island). 110.6 Section 110.6 Navigation and Navigable... Areas § 110.6 Portland Harbor, Portland, Maine (between Little Diamond Island and Great Diamond Island). Beginning at the southeasterly corner of the wharf, at the most southerly point of Great Diamond Island...

  19. 33 CFR 110.6 - Portland Harbor, Portland, Maine (between Little Diamond Island and Great Diamond Island).

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... (between Little Diamond Island and Great Diamond Island). 110.6 Section 110.6 Navigation and Navigable... Areas § 110.6 Portland Harbor, Portland, Maine (between Little Diamond Island and Great Diamond Island). Beginning at the southeasterly corner of the wharf, at the most southerly point of Great Diamond Island...

  20. 33 CFR 110.6 - Portland Harbor, Portland, Maine (between Little Diamond Island and Great Diamond Island).

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... (between Little Diamond Island and Great Diamond Island). 110.6 Section 110.6 Navigation and Navigable... Areas § 110.6 Portland Harbor, Portland, Maine (between Little Diamond Island and Great Diamond Island). Beginning at the southeasterly corner of the wharf, at the most southerly point of Great Diamond Island...